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onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/orsubsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

DATA SHEET
www.onsemi.com

Silicon Carbide (SiC)
MOSFET – EliteSiC,
32 mohm, 650V, M3S, TOLL
NTBL032N065M3SV(BR)DSSRDS(ON) TYP

ID MAX

650 V

32 mW @ 18 V

55 AFeatures• Typical RDS(on) = 32 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 55 nC)• High Speed Switching with Low Capacitance (Coss = 113 pF)• 100% Avalanche Tested• This Device is Halide Free and RoHS Compliant with Exemption 7a,

N−Channel MOSFET

Pb−Free 2LI (on second level interconnection)

DApplications• SMPS (Switching Mode Power Supplies)• Solar Inverters• UPS (Uninterruptable Power Supplies)• Energy Storage• EV Charging Infrastructure

G S1S2H−PSOF8L
CASE 100DC

MARKING DIAGRAM

AYWWZZ

BL032N
065M3SAYWWZZ
BL032N065M3S= Assembly Location= Year= Work Week
= Assembly Lot Code= Specific Device CodeORDERING INFORMATION
See detailed ordering and shipping information on page 9 ofthis data sheet.

© Semiconductor Components Industries, LLC, 2024

September, 2024 − Rev. 3

1Publication Order Number:
NTBL032N065M3S/D

NTBL032N065M3S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
SymbolValueUnit

Drain−to−Source Voltage

VDSS650V

Gate−to−Source Voltage

VGS−8/+22VID

55

A

PD

227

W

Parameter

TC = 25°C

Continuous Drain Current
Power Dissipation

TC = 100°C

Continuous Drain Current
Power Dissipation

ID39

A

PD

113

W

Pulsed Drain Current (Note 1)

TC = 25°C, tp = 100 ms

IDM

192

A

Continuous Source−Drain Current (Body Diode)

TC = 25°C, VGS = −3 V

IS

33

A

TC = 100°C, VGS = −3 V
Pulsed Source−Drain Current (Body Diode) (Note 1)

TC = 25°C, VGS = −3 V, tp = 100 ms

Single Pulse Avalanche Energy (ILPK = 16.7 A, L = 1 mH) (Note 2)
Operating Junction and Storage Temperature Range
Lead Temperature for Soldering Purposes (1/8″ from Case for 10 s)

19ISM

173AEAS

139mJTJ, Tstg

−55 to +175°C

TL

260°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating, limited by max junction temperature.
2. EAS of 139 mJ is based on starting TJ = 25°C, L = 1 mH, IAS = 16.7 A, VDD = 100 V, VGS = 18 V.

THERMAL CHARACTERISTICS
Parameter

SymbolValue

Unit

Thermal Resistance, Junction−to−Case (Note 3)RθJC

0.66°C/W

Thermal Resistance, Junction−to−Ambient (Note 3)RθJA

43°C/W

3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particularconditions noted.

RECOMMENDED OPERATING CONDITIONSParameter
Operation Values of Gate−to−Source Voltage

Symbol

Value

Unit

VGSop−5...−3/+18V

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

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2NTBL032N065M3S
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
SymbolTest Conditions

Min

Drain−to−Source Breakdown Voltage

V(BR)DSSVGS = 0 V, ID = 1 mA

650

Drain−to−Source Breakdown Voltage
Temperature Coefficient

DV(BR)DSS/DTJID = 1 mA, Referenced to 25°C

IDSS

VDS = 650 V, TJ = 25°C

10mA

VDS = 650 V, TJ = 175°C (Note 5)

500mA

IGSS

VGS = −8/+22 V, VDS = 0 V±1mA

RDS(on)VGS = 18 V, ID = 15 A, TJ = 25°C

3244mW

VGS = 18 V, ID = 15 A, TJ = 175°C(Note 5)47

VGS = 15 V, ID = 15 A, TJ = 25°C

41

VGS = 15 V, ID = 15 A, TJ = 175°C(Note 5)52
4.0

VParameter

TypMaxUnit

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

V
90mV/°CON CHARACTERISTICS
Drain−to−Source On Resistance

Gate Threshold Voltage
Forward Transconductance

VGS(TH)

VGS = VDS, ID = 7.5 mA

2.02.9gFS

VDS = 10 V, ID = 15 A

9.9

S

VGS = 0 V, f = 1 MHz,VDS = 400 V (Note 5)

1396

pF

CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

113
8.9

VGS = −3/18 V, VDD = 400 V,
ID = 15 A (Note 5)nC

55

Gate−to−Source Charge

QGS

15

Gate−to−Drain Charge

QGD

Gate−ResistanceRG

f = 1 MHz

5.0

W

Turn−On Delay Timetd(ON)

8.8

ns

Turn−Off Delay Timetd(OFF)VGS = −3/18 V, VDD = 400 V,
ID = 15 A, RG = 4.7 W,
TJ = 25°C (Notes 4, 5)

14

SWITCHING CHARACTERISTICS

31

Rise Timetr

12

Fall Timetf

9Turn−On Switching Loss

EON

33

Turn−Off Switching Loss

EOFF

16Total Switching Loss

ETOT

49

Turn−On Delay Timetd(ON)

Turn−Off Delay Timetd(OFF)

VGS = −3/18 V, VDD = 400 V,
ID = 15 A, RG = 4.7 W,
TJ = 175°C (Notes 4, 5)

mJ

ns

7.8
37

Rise Timetr

12

Fall Timetf

11

Turn−On Switching Loss

EON

31

Turn−Off Switching Loss

EOFF

25Total Switching Loss

ETOT

56mJ

SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage

VSD

VGS = −3 V, ISD = 15 A, TJ = 25°C

4.5

VGS = −3 V, ISD = 15 A, TJ = 175°C

4.2

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36.0

VNTBL032N065M3S
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter

SymbolTest Conditions

Min

TypMaxUnit

SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Reverse Recovery TimetRR

Charge Timeta

VGS = −3 V, IS = 15 A,
dI/dt = 1000 A/ms, VDS = 400 V(Note 5)

15.5

ns

8.9

Discharge Timetb

6.6

Reverse Recovery Charge

QRR

72nC

Reverse Recovery Energy

EREC

4.6mJ

Peak Reverse Recovery Current

IRRM

9.3

A

4. EON/EOFF result is with body diode.
5. Defined by design, not subject to production test.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.

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4NTBL032N065M3S
TYPICAL CHARACTERISTICS
300

300

TJ=25°C

250
ID, Drain Current (A)ID, Drain Current (A)

250
200
150
100
VGS=10VVGS=12V
VGS=15V
VGS=18V
VGS=20V50
0

TJ=175°C

024681012VDS, Drain to Source Voltage (V)

200
150
100
VGS=10V
VGS=12V
VGS=15V
VGS=18V
VGS=20V

5014016024681012VDS, Drain to Source Voltage (V)250

VDS=10V

ID, Drain Current (A)

200

150

100500TJ=−55°C
TJ=25°C
TJ=175°C
02468101214VGS, Gate to Source Voltage (V)16120100806040

201868Drain to Source On Resistance (Normalized)

RDS(ON), Drain to Source On Resistance (mW)

70605040302010010203040ID, Drain Current (A)101214VGS, Gate to Source Voltage (V)1618

Figure 4. On−Resistance vs. Gate Voltage

VGS=12V
VGS=15V
VGS=18V

TJ=25°C

TJ=25°C
TJ=175°C

ID=15A

Figure 3. Transfer Characteristics

80

16Figure 2. Output Characteristics

RDS(ON), Drain to Source On Resistance (mW)

Figure 1. Output Characteristics

1450

1.8
1.6

ID=15A
VGS=18V

1.4
1.2
10.8
0.6
−10060Figure 5. On−Resistance vs. Drain Current−50050100
TJ, Junction Temperature (°C)

150

Figure 6. On−Resistance vs. Junction
Temperature

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5200

NTBL032N065M3S
TYPICAL CHARACTERISTICS
25VGS=0V
TJ=25°C
f=1MHzE OSS , Stored Energy (uJ)C, Capacitance (pF)

10000

1000

100

2015101010.1

VGS = 0V
TJ =25C
f= 1MHZ

5CISS
COSS
CRSS

01
10100
VDS, Drain to Source Voltage (V)0Figure 7. Capacitance Characteristics−12ID = 15A−10TJ = 25°C

159400V
560V
650V

3−8−6−4−2t p <20us−60−80−100−120−140−160−1800102030405060Figure 9. Gate Charge Characteristics

ID, Drain Current (A)−8−6−4t p <20us

VGS=−5V
VGS=−3V
VGS=0V
VGS=+15V
VGS=+18V−20Figure 10. Reverse Conduction
Characteristics
10000SINGLE PULSE
TJ = Max rated
R qJC = 0.66 ° C/W
TC = 25°C−20−40ID , DRAIN CURRENT (A)−10TJ= 175°C−60−80−100−120−14010010pulse duration =DC
pulse duration =1ms
pullse duration =100us
pulse duration =10us
pulse duration =1us
Rdson
BV boundary
pulse boundary

1−160−180
VSD, Drain to Source Voltage (V)−200VDS , Drain to Source Voltage (V)QG, Gate Charge (nC)−120−400−30−20

VGS=−5V
VGS=−3V
VGS=0V
VGS=+15V
VGS=+18V

I D, Drain Current (A)126700200300400500600
VDS, Drain to Source Voltage (V)Figure 8. Stored Energy vs. Drain−to−Source
Voltage

18VGS, Gate to Source Voltage (V)

100

0.1

−2000.1

110100VDS , DRAIN−TO−SOURCE VOLTAGE (V)Figure 11. Reverse Conduction Characteristics

Figure 12. Safe Operating Area

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61000

NTBL032N065M3S
TYPICAL CHARACTERISTICS
250100PD, Power Dissipation (W)IAV , Avalanche Current (A)R qJC = 0.66 ° C/W

25C curve
150C curve

10200150

10050

10.001

0.010

0.100
1.000
TAV , Avalanche Time (ms)010.000

25

Figure 13. Avalanche Current vs. Pulse Time(UIS)

75
100
125
TC, Case Temperature (°C)

150

175

Figure 14. Maximum Power Dissipation vs.
Case Temperature60

60
Rg = 4.7ohm
Vgs = −3/18V
Vds = 400V
Tj = 25C50

Eon25CEoff25C
Etot25C

Rg = 4.7ohm
Vgs = −3/18V
Vds = 400V
Tj = 175C5040Switching Loss [uJ]

Switching Loss [uJ]50302010Eon175C
Eoff175C
Etot175C

4030
2010034.5

67.5910.5

1213.501537.5
910.5
ID, Drain Current (A)Figure 15. Inductive Switching Loss vs. Drain
Current

Figure 16. Inductive Switching Loss vs. Drain
Current

www.onsemi.com
74.5

61213.5

ID, Drain Current (A)NTBL032N065M3S
TYPICAL CHARACTERISTICS
120
Eon25CEoff25C
Etot25C80
60
40Eon 15A
Eoff 15A
Etot 15A

604020200Vgs = −3/18V
Vds = 400V
Tj = 25C
ID = 15A80
Switching Loss [uJ]

Switching Loss [uJ]100100Id = 15A
Vgs = −3/18V
Rg = 4.7ohm
Tj = 25C

300

400
500
VDS, Drain−to−Source Voltage (V)0600

123456789Figure 17. Inductive Switching Loss vs. Drain
Voltage

Figure 18. Inductive Switching Loss vs. Gate
Resistance70
Vgs = −3/18V
Vds = 400V
Tj = 25C
ID = 7.5A

60

Eon 7.5A
Eoff 7.5A
Etot 7.5A

40
30
2010012345678109RG, Gate Resistance[W]Figure 19. Inductive Switching Loss vs. Gate
Resistance
1ZqJC , Transient Thermal Impedance (°C/W)

Switching Loss [uJ]50

D=0 is Single Pulse

0.1

t1

1e−04

D=0.00D=0.01
D=0.02
D=0.05
D=0.10D=0.20D=0.50Notes:ZθJC(t)=0.66°C/W
TJM=PDMxZθJC(t)+TC
Duty Cycle,D=t1/t2

PDM

0.01
1e−05

10RG, Gate Resistance[W]

t2

1e−03
1e−02t, Rectangular Pulse Duration (sec)Figure 20. Thermal Response Characteristics

www.onsemi.com
81e−01

1e+00

NTBL032N065M3S
DEVICE ORDERING INFORMATIONDevice

PackageShipping†

NTBL032N065M3S

H−PSOF8L

2000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

www.onsemi.com
9MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONSH−PSOF8L 9.90x10.38x2.30, 1.20P
CASE 100DC
ISSUE DDATE 30 JUL 2024

GENERICMARKING DIAGRAM*XXXX = Specific Device CodeA= Assembly Location
Y= Year
WW = Work Week
ZZ
= Assembly Lot Code

DOCUMENT NUMBER:DESCRIPTION:

98AON80466G*This information is generic. Please refer todevice data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

H−PSOF8L 9.90x10.38x2.30, 1.20P

PAGE 1 OF 1

onsemi andare trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2018www.onsemi.com

onsemi,, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to anyproducts or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of theinformation, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or useof any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance mayvary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any licenseunder any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATIONTECHNICAL PUBLICATIONS:Technical Library: www.onsemi.com/design/resources/technical−documentation
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