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About the CoverFrom the article “Dual-beam Irradiation Stability of Amorphous Silicon
Oxycarbide at 300 and 500 degrees C” by Qing Su et al., shown is atransmission electron microscopy (TEM) image of a cross-sectional sample
consisting of a 300 nm thick amorphous SiOC film (top, right) sitting on a
SiO2/Si substrate (bottom, left). The SiO2 portion of the substrate is
300 nm thick. The very top of the sample shows some of the adhesive
used in making the cross-section. The entire sample was subjected to a
3 keV He implantation of 2.0x1017 He/cm2 while being simultaneously
irradiated with 500 keV Kr ions to a dose of 1.4x1016 Kr/cm2. The
total dose received was 19.7 dpa. No crystallization, He bubble or voidformation, or segregation are observed in the SiOC portion of the sample,
suggesting dual-beam irradiation stability at 500 °C. However, the Si
substrate contains numerous nanoscale He bubbles and defect clusters.
November 2020 Guest Editors
Aluminum and Magnesium: Casting Technology
and Solidification
Aluminum Committee
Dmitry Eskin, Brunel University
Electrometallurgical Processing
Hydrometallurgy and Electrometallurgy Committee;
Pyrometallurgy Committee
Prabhat K. Tripathy, Idaho National Laboratory
Takanari Ouchi, University of Tokyo
Hojong Kim, Pennsylvania State University
Hong (Marco) Peng, University of Queensland
Gisele Azimi, University of Toronto
Machine Learning Applications in Advanced
Manufacturing Processes
Energy Committee; Additive ManufacturingCommittee; Computational Materials Science andEngineering Committee
Donna Guillen, Idaho National Laboratory
Edward Herderick, Ohio State University
Srikanth Patala, North Carolina State University
Judy Schneider, University of Alabama at Huntsville

Nanomechanics of Low-dimensional Materials
Nanomaterials Committee
Wei Gao, University of Texas at San Antonio
Jiyoung Chang, University of Utah
Nanostructured Materials under
Extreme Environments
InvitedYouxing Chen, University of North Carolina
at Charlotte
Jin Li, Harbin Institute of Technology
Process Design and Materials Developmentfor High-Temperature Applications
Refractory Metals & Materials Committee
Chai Ren, University of Utah
Ravi Enneti, Global Tungsten and Powders Corp
Solidification Behavior in the Presenceof External Fields
Solidification Committee
Lang Yuan, University of South Carolina
Andrew Kao, University of Greenwich

About JOM:
The scope of JOM (ISSN 1047-4838) encompasses publicizing news about TMS and its members andstakeholder communities while publishing meaningful peer-reviewed materials science and engineering content.
That content includes groundbreaking laboratory discoveries, the effective transition of science into technology,
innovative industrial and manufacturing developments, resource and supply chain issues, improvement andinnovation in processing and fabrication, and life-cycle and sustainability practices. In fulfilling this scope, JOM
strives to balance the interests of the laboratory and the marketplace by reporting academic, industrial, andgovernment-sponsored work from around the world.
About TMS:
The Minerals, Metals & Materials Society (TMS) is a professional organization that encompasses the entire rangeof materials and engineering, from minerals processing and primary metals production to basic research and theadvanced applications of materials.
Publishing Information:
JOM is an official publication of The Minerals, Metals & Materials Society and is owned by the Society.
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throughout the world. Publication Frequency: 12 issues per year.
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