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onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/orsubsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

DATA SHEET
www.onsemi.com

Silicon Carbide (SiC)
MOSFET – EliteSiC,
23 mohm, 650V, M3S, TOLL
NTBL023N065M3SVDSSRDS(ON) TYP

ID MAX

650 V

23 mW @ 18 V

77 AFeatures• Typical RDS(on) = 23 mW @ VGS = 18 V
• Ultra Low Gate Charge (QG(tot) = 69 nC)• High Speed Switching with Low Capacitance (Coss = 152 pF)• 100% Avalanche Tested• This Device is Halide Free and RoHS Compliant with Exemption 7a,
Pb−Free 2LI (on second level interconnection)

N−Channel MOSFETApplications• SMPS (Switching Mode Power Supplies)• Solar Inverters• UPS (Uninterruptable Power Supplies)• Energy Storage• Infrastructure

DG S1

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter

Symbol

S2
Value

Unit

Drain−to−Source Voltage

VDSS

650

V

Gate−to−Source Voltage

VGS−8/+22

V

Continuous Drain Current

TC = 25°C

Power Dissipation
Continuous Drain Current

TC = 100°C

Power Dissipation

ID

77

A

PD

312

W

ID

54

A

PD

156

W

Pulsed Drain Current (Note 1)

TC = 25°C
tp = 100 ms

IDM

280

A

Continuous Source−DrainCurrent (Body Diode)

TC = 25°C,
VGS = −3 V

IS

46

A

TC = 100°C,
VGS = −3 V
Pulsed Source−Drain Current(Body Diode) (Note 1)

TC = 25°C,
VGS = −3 V,tp = 100 ms

Single Pulse Avalanche Energy(ILPK = 19.6 A, L = 1 mH) (Note 2)
Operating Junction and Storage Temperature
Range
Lead Temperature for Soldering Purposes(1/8″ from case for 10 s)

H−PSOF8L
CASE 100DC

MARKING DIAGRAM

AYWWZZ

BL023N
065M3S

27
ISM

274

A

EAS

192

mJ

TJ, Tstg−55 to+175°C

TL

260°C

A
YWWZZ
BL023N065M3S= Assembly Location= Year= Work Week
= Assembly Lot Code
= Specific Device CodeORDERING INFORMATION
See detailed ordering and shipping information on page 7 ofthis data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
1. Repetitive rating, limited by max junction temperature.
2. EAS of 192 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 19.6 A,
VDD = 100 V, VGS = 18 V.

© Semiconductor Components Industries, LLC, 2024

August, 2024 − Rev. 01Publication Order Number:
NTBL023N065M3S/D

NTBL023N065M3S
THERMAL CHARACTERISTICS
Parameter

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case (Note 3)RθJC

0.48°C/W

Thermal Resistance, Junction−to−Ambient (Note 3)RθJA

43°C/W

3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particularconditions noted.

RECOMMENDED OPERATING CONDITIONSParameter
Operation Values of Gate−to−Source Voltage

Symbol

Value

Unit

VGSop−5...−3/+18V

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
SymbolTest Condition

Min

Drain−to−Source Breakdown Voltage

V(BR)DSSVGS = 0 V, ID = 1 mA

650

Drain−to−Source Breakdown Voltage
Temperature Coefficient

DV(BR)DSS/DTJID = 1 mA, Referenced to 25°C

IDSS

VDS = 650 V, TJ = 25°C

10mA

VDS = 650 V, TJ = 175°C (Note 5)

500mA

IGSS

VGS = −8/+22 V, VDS = 0 V±1mA

RDS(on)VGS = 18 V, ID = 20 A, TJ = 25°C

2332.6mW

VGS = 18 V, ID = 20 A, TJ = 175°C

34

VGS = 15 V, ID = 20 A, TJ = 25°C

29

VGS = 15 V, ID = 20 A, TJ = 175°C

374VParameter

TypMaxUnit

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

V89

mV/°C

ON CHARACTERISTICS
Drain−to−Source On Resistance

Gate Threshold Voltage
Forward Transconductance

VGS(TH)

VGS = VDS, ID = 10 mA

2gFS

VDS = 10 V, ID = 20 A

14S

VGS = 0 V, f = 1 MHz,VDS = 400 V (Note 5)1950pF

CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

152
13

VGS = −3/18 V, VDD = 400 V,
ID = 20 A (Note 5)

69nC

Gate−to−Source Charge

QGS

19

Gate−to−Drain Charge

QGD

Gate−ResistanceRG

f = 1 MHz

4.0

W

Turn−On Delay Timetd(ON)

11ns

Turn−Off Delay Timetd(OFF)

VGS = −3/18 V, VDD = 400 V,
ID = 20 A, RG = 4.7 W,
TJ = 25°C, (Notes 4, 5)

18

SWITCHING CHARACTERISTICS

Rise Time35tr15

Fall Timetf

9.6

Turn−On Switching Loss

EON51

Turn−Off Switching Loss

EOFF

29

Total Switching Loss

ETOT

80

www.onsemi.com
2mJ

NTBL023N065M3S
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter

SymbolTest ConditionTurn−On Delay Timetd(ON)

Turn−Off Delay Timetd(OFF)

VGS = −3/18 V, VDS = 400 V,
ID = 20 A, RG = 4.7 W,
TJ = 175°C, (Notes 4, 5)Min

TypMaxUnit

SWITCHING CHARACTERISTICS
ns

9.6
41

Rise Timetr

14

Fall Timetf

12

Turn−On Switching Loss

EON51

Turn−Off Switching Loss

EOFF

45Total Switching Loss

ETOT

96mJ

SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage

VSDReverse Recovery TimetRR

Charge TimetaDischarge Timetb

8Reverse Recovery Charge

QRR

97nC

Reverse Recovery Energy

EREC

8.7

mJ

Peak Reverse Recovery Current

IRRM

11A

VGS = −3 V, ISD = 20 A, TJ = 25°C

4.5

VGS = −3 V, ISD = 20 A, TJ = 175°C

4.2

VGS = −3 V, IS = 20 A,
dI/dt = 1000 A/ms, VDS = 400 V(Note 5)

196.0

Vns

11

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. EON/EOFF result is with body diode.
5. Defined by design, not subject to production test.

www.onsemi.com
3NTBL023N065M3S
TYPICAL CHARACTERISTICS
300

300

TJ=25°C

250
ID, Drain Current (A)ID, Drain Current (A)

250
200
150
100
VGS=10V
VGS=12V
VGS=15V
VGS=18V
VGS=20V50
0

TJ=175°C

02468
1012VDS, Drain to Source Voltage (V)

200
150
100
VGS=10VVGS=12V
VGS=15V
VGS=18V
VGS=20V

5014016024681012VDS, Drain to Source Voltage (V)300

VDS=10V

ID, Drain Current (A)250200150100500

TJ=−55°C
TJ=25°C
TJ=175°C
02468101214VGS, Gate to Source Voltage (V)1618807060504030201068

Drain to Source On Resistance (Normalized)

RDS(ON), Drain to Source On Resistance (mW)

504030201001020304050
ID, Drain Current (A)60101214VGS, Gate to Source Voltage (V)1618Figure 4. On−Resistance vs. Gate Voltage

VGS=12V
VGS=15V
VGS=18V

TJ=25°C

TJ=25°C
TJ=175°C

ID=20A

Figure 3. Transfer Characteristics

6016Figure 2. Output Characteristics

RDS(ON), Drain to Source On Resistance (mW)

Figure 1. On−Region Characteristics

1470

1.8

ID=20A
VGS
DS=18V

1.6
1.4
1.2
10.8
0.6
−100

80

Figure 5. On−Resistance vs. Drain Current−50050100
TJ, Junction Temperature (°C)

150

Figure 6. On−Resistance vs. Junction
Temperature

www.onsemi.com
4200

NTBL023N065M3S
TYPICAL CHARACTERISTICS
35VGS=0V
TJ=25°Cf=1MHz1000

100100.125201510C ISS
C OSS
C RSS

50110100VDS, Drain to Source Voltage (V)Figure 7. Capacitance Characteristics

180100−10ID=20A−8TJ = 25C600

963−6−4−2t p < 20 us−302040QG, Gate Charge (nC)−8−6−40−60−80−100−120−140−160−18060

80−200
VDS, Drain to Source Voltage [V]Figure 9. Gate Charge Characteristics−2TJ = 175C t p < 20 us
VGS=−5V
VGS=−3V
VGS=0V
VGS=+15V
VGS=+18V0Figure 10. Reverse Conduction
Characteristics10000−20−40ID, DRAIN CURRENT (A)−100−40

VDD=400V
VDD=520V
VDD=650V

0700−20

VGS=−5V
VGS=−3V
VGS=0V
VGS=+15V
VGS=+18V

ID, Drain Current (A)12ID, Drain Current (A)

200
300
400
500
VDS, Drain to Source Voltage (V)Figure 8. Stored Energy vs. Drain−to−Source
Voltage

15VGS, Gate to Source Voltage (V)VGS=0V
TJ=25°C
f=1MHz30Eoss, Stored Energy (uJ)C, Capacitance (pF)

10000

−60
−80−100−120−140100

101SINGLE PULSE
TJ = Max rated
RqJC = 0.48° C/WTC = 25° C−160−180
VDS, Drain to Source Voltage [V]0.1−2000.1

Figure 11. Reverse Conduction Characteristics

pulse duration =DC
pulse duration =1ms
pullse duration =100us
pulse duration =10us
pulse duration =1us
Rdson
BV boundary
pulse boundary

110100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)Figure 12. Safe Operating Area

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51000

NTBL023N065M3S
TYPICAL CHARACTERISTICS
100350Rthjc =0.48°C/W
PD, Power Dissipation (W)IAV , Avalanche Current (A)300

10120015010050

TJ=25°C
TJ=150°C0.001250

0.010.11tAV, Time in Avalanche (ms)01025

Figure 13. Avalanche Current vs. Pulse Time(UIS)

80

100

Eon25CEoff25C
Etot25C

80

50403020175

Eon175C
Eoff175C
Etot175C

6050
403020101051015
I D , Drain Current (A)020510Figure 15. Switching Loss vs. Collector
Current

140

Eon
EoffEtot
Switching Loss [uJ]160

T C = 25°C
V GS=−3/18V
RG=4.7W
I D=20A

120
10080
60
4020300

350
400450500
550
VDS, DRAIN TO SOURCE VOLTAGE (V)2015Drain Current,Id [A]Figure 16. Switching Loss vs. Drain Current

180

Switching Loss [ uJ]

15070600T C = 175°C
V GS=−3/18V
V DD=400V
R G=4.7W

90

Switching Loss [uJ]

Switching Loss [uJ]7075100125
TC, Case Temperature (°C)

Figure 14. Maximum Power Dissipation vs.
Case Temperature90
TC= 25°C
VGS =−3/18V
VDD =400V
RG =4.7W

50600

150
140130120110
1009080706050403020100

T C = 25 ° C
V GS =−3/18V
V DD =400V
I D=20A1Figure 17. Switching Loss vs. Drain Voltage

23Eon25C
Eoff25C
Etot25C4567Gate Resistance,Rg [W]8910

Figure 18. Switching Loss vs. Gate Resistancewww.onsemi.com
6NTBL023N065M3S
TYPICAL CHARACTERISTICS
9070
Switching Loss [uJ]Eon25CEoff25C
Etot25C

T C = 25°C
V GS =−3/18V
V DD =400V
I D=10A

8060504030
20100147Gate Resistance, Rg [W]10Figure 19. Switching Loss vs. Gate Resistance

1ZqJC , Transient Thermal Impedance (°C/W)

D=0 is Single Pulse

0.10.01
PDM
t10.001
1e−05

1e−04

D=0.00D=0.01
D=0.02
D=0.05
D=0.10D=0.20
D=0.50Notes:ZθJC(t)=0.48°C/W
TJM=PDMxZθJC(t)+TC
Duty Cycle,D=t 1/t2

t2

1e−03

1e−02

1e−01

1e+00t, Rectangular Pulse Duration (sec)Figure 20. Thermal Response Characteristics
DEVICE ORDERING INFORMATION
DevicePackage

Shipping†

NTBL023N065M3S

H−PSOF8L

2000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

www.onsemi.com
7MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONSH−PSOF8L 9.90x10.38x2.30, 1.20P
CASE 100DC
ISSUE DDATE 30 JUL 2024

GENERICMARKING DIAGRAM*XXXX = Specific Device CodeA= Assembly Location
Y= Year
WW = Work Week
ZZ
= Assembly Lot Code

DOCUMENT NUMBER:DESCRIPTION:

98AON80466G*This information is generic. Please refer todevice data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

H−PSOF8L 9.90x10.38x2.30, 1.20P

PAGE 1 OF 1

onsemi andare trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2018www.onsemi.com

onsemi,, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of theinformation, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or useof any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance mayvary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any licenseunder any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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