DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpage

M3D187

PMST5088; PMST5089
NPN general purpose transistors
Product data sheet
Supersedes data of 1997 May 22

1999 Apr 22

NXP Semiconductors

Product data sheet

NPN general purpose transistors

PMST5088; PMST5089

FEATURESPINNING• Low current (max. 100 mA)

PIN• Low voltage (max. 30 V).

1base

2

emitter3collector

APPLICATIONSDESCRIPTION• Low-noise input stages in audio equipment.
DESCRIPTION

3handbook, halfpage

3NPN transistor in a SC-70; SOT323 plastic package.
1MARKING
MARKING CODE(1)TYPE NUMBER

2

PMST5088∗1Q

1

PMST5089∗1R

Top view

Fig.1

Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.

2
MAM062

Simplified outline (SC-70; SOT323)
and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO

PARAMETER
collector-base voltage

CONDITIONSPMST5089
collector-emitter voltage

MAX.

UNIT

open emitter

PMST5088
VCEO

MIN.
−

35

V−

30

V−

30

V−

25

V−

4.5

Vopen base

PMST5088
PMST5089
VEBOemitter-base voltage

open collector

ICcollector current (DC)−100mAICM

peak collector current−200mA

IBM

peak base current−100mAPtot

total power dissipation−200mW

Tstg

storage temperature−65+150°C

Tj

junction temperature−150°C

Tamb

operating ambient temperature−65+150°C

Tamb ≤ 25 °C; note 1Note
1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 222NXP Semiconductors

Product data sheet

NPN general purpose transistors

PMST5088; PMST5089

THERMAL CHARACTERISTICSSYMBOLRth j-aPARAMETERCONDITIONSthermal resistance from junction to ambient

VALUE

UNIT625

K/W

note 1Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO

PARAMETER
collector cut-off current

IEBO

emitter cut-off currenthFE

DC current gain
PMST5088

DC current gain
PMST5089

CONDITIONS

MIN.

MAX.

UNIT

IE = 0; VCB = 20 V

−50nA

IE = 0; VCB = 20 V; Tj = 150 °C−10μA

IC = 0; VEB = 3 V−50nA

IC = 0; VEB = 4.5 V−100nAIC = 0.1 mA

300

900

IC = 1 mA

350−

IC = 10 mA

300−

IC = 0.1 mA

400

1200

IC = 1 mA

450−

IC = 10 mA

400−

VCE = 5 V

VCE = 5 V

VCEsatcollector-emitter saturation voltage

IC = 10 mA; IB = 1 mA−

500mV

VBE

base-emitter voltage

IC = 10 mA; VCE = 5 V−

800mV

Cc

collector capacitance

IE = ie = 0; VCB = 5 V; f = 1 MHz−

4pF

Ceemitter capacitance

IC = ic = 0; VEB = 0.5 V; f = 1 MHz−

12pF

fTtransition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz 100−MHzFnoise figure

IC = 100 μA; VCE = 5 V; RS = 1 kΩ
f = 10 Hz to 15.7 kHz−3dB−2dB

PMST5088
PMST5089

1999 Apr 22

3

NXP Semiconductors

Product data sheet

NPN general purpose transistors

PMST5088; PMST5089

PACKAGE OUTLINE
Plastic surface mounted package; 3 leads

SOT323DEB

AX

HEyv M A

3QA

A1c

1

2
e1

bp

Lpw M Bedetail X012 mmscale

DIMENSIONS (mm are the original dimensions)
UNITA

A1maxbpcDEee1HELpQvwmm

1.1
0.8

0.1

0.4
0.3

0.25
0.10

2.2
1.8

1.35
1.15

1.3

0.65

2.2
2.0

0.45
0.15

0.23
0.13

0.2

0.2

OUTLINE
VERSION
SOT323

1999 Apr 22

REFERENCES
IEC

JEDEC

EIAJ
SC-70

4

EUROPEAN
PROJECTION

ISSUE DATE
97-02-28

NXP Semiconductors

Product data sheet

NPN general purpose transistors

PMST5088; PMST5089

DATA SHEET STATUS
DOCUMENTSTATUS(1)PRODUCTSTATUS(2)Objective data sheet

Development

This document contains data from the objective specification for productdevelopment.

Preliminary data sheet

Qualification

This document contains data from the preliminary specification.

Product data sheet

Production

This document contains the product specification.

DEFINITION

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS

above those given in the Characteristics sections of thisdocument is not implied. Exposure to limiting values forextended periods may affect device reliability.

General ⎯ Information in this document is believed to beaccurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completenessof such information and shall have no liability for theconsequences of use of such information.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms andconditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including thosepertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between informationin this document and such terms and conditions, the latter
will prevail.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time andwithout notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell productsthat is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents orother industrial or intellectual property rights.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable foruse in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunctionof an NXP Semiconductors product can reasonably beexpected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at
the customer’s own risk.

Export control ⎯ This document as well as the item(s)described herein may be subject to export control
regulations. Export might require a prior authorization fromnational authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values andCharacteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation orwarranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage tothe device. Limiting values are stress ratings only andoperation of the device at these or any other conditions

1999 Apr 225

NXP Semiconductors

Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes weremade to the content, except for the legal definitions and disclaimers.

Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any licenseunder patent- or other industrial or intellectual property rights.
Printed in The Netherlands

115002/00/03/pp6

Date of release: 1999 Apr 22

Document order number: 9397 750 05709