PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 02 — 2 September 2009

Product data sheet

1. Product profile
1.1 General description
PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)
plastic packages
Table 1.

Product overview

Type number

Package
NXP

JEITA

NPN/PNP
complement

NPN/NPN
complement

PEMB30

SOT666-

PEMD30

PEMH30

PUMB30

SOT363

SC-88

PUMD30

PUMH301.2 Features
n 100 mA output current capabilityn Built-in bias resistorsn Simplifies circuit designn Reduces component countn Reduces pick and place costs

1.3 Applicationsn Low current peripheral drivern Cost-saving alternative for BC857BS
and BC857BVn Control of IC inputs

1.4 Quick reference data
Table 2.
SymbolQuick reference data
Parameter

Conditions

Min

TypMaxUnit

open base

--−50

V

Per transistor
VCEO

collector-emitter voltage

IO

output current--−100mA

R1bias resistor 1 (input)

1.54

2.2

2.86kΩ

PEMB30; PUMB30

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open2. Pinning information
Table 3.

Pinning

PinDescription

Simplified outline

1GND (emitter) TR1

2input (base) TR1

3output (collector) TR2

4

GND (emitter) TR2

5input (base) TR2

6output (collector) TR1

654Symbol
654

R1TR2TR1

123

R1001aab555

123006aaa268

3. Ordering information
Table 4.

Ordering information

Type numberPackage
Name

Description

Version

PEMB30-plastic surface-mounted package; 6 leads

SOT666

PUMB30SC-88

plastic surface-mounted package; 6 leads

SOT3634. Marking
Table 5.

Marking codes

Type numberMarking code[1]PEMB30

2T

PUMB30*B2[1]* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia* = W: made in China

PEMB30_PUMB30_2

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 02 — 2 September 2009

2 of 10

PEMB30; PUMB30

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameterConditions

MinMax

UnitPer transistor
VCBO

collector-base voltage

open emitter-−50VVCEO

collector-emitter voltage

open base-−50VVEBO

emitter-base voltage

open collector-−5VIO

output current-−100mA

ICM

peak collector current

single pulse;
tp ≤ 1 ms-−100mA

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT363[1]-200mW

SOT666[1][2]-

200mW

SOT363

[1]

-

300mW

SOT666[1][2]Per device
total power dissipation

Ptot

Tamb ≤ 25 °C-300mW

Tstg

storage temperature−65+150°C

Tj

junction temperature-150°C

Tambambient temperature−65+150°C[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.

[2]

Reflow soldering is the only recommended soldering method.

6. Thermal characteristics
Table 7.

Thermal characteristics

SymbolParameter

Conditions

MinTypMax

Unit

Per transistor
Rth(j-a)thermal resistance fromjunction to ambientin free air

SOT363

[1]

--

625

K/W

SOT666[1][2]

--

625

K/W

SOT363

[1]--

416

K/W

SOT666[1][2]--416

K/W

Per device
Rth(j-a)thermal resistance fromjunction to ambientin free air[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

PEMB30_PUMB30_2

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 02 — 2 September 2009

3 of 10

PEMB30; PUMB30

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
SymbolParameter

Conditions

Min

TypMaxUnit

Per transistor
ICBO

collector-base cut-off
current

VCB = −50 V; IE = 0 A--−100nA

ICEO

collector-emitter cut-off VCE = −30 V; IB = 0 A
current
VCE = −30 V; IB = 0 A;
Tj = 150 °C--−1µA--−50µAnA

IEBO

emitter-base cut-off
current

VEB = −5 V; IC = 0 A--−100hFE

DC current gain

VCE = −5 V; IC = −20 mA

30--VCEsat

collector-emittersaturation voltage

IC = −10 mA; IB = −0.5 mA--−150mVR1bias resistor 1 (input)

1.54

2.2

2.86kΩCccollector capacitance--3pF

VCB = −10 V; IE = ie = 0 A;
f = 1 MHz006aaa691

500006aaa692

−1hFE
(1)

400

VCEsat
(V)

300

(2)

−10−1200

(1)
(2)
(3)

(3)

100

0−10−1−1−10−102−10−2−10−1IC (mA)

IC/IB = 20

(1) Tamb = 100 °C(1) Tamb = 100 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = −40 °C(3) Tamb = −40 °C

DC current gain as a function of collectorcurrent; typical values

Fig 2.

−102

Collector-emitter saturation voltage as afunction of collector current; typical values

PEMB30_PUMB30_2

Product data sheet−10IC (mA)

VCE = −5 V

Fig 1.

−1© NXP B.V. 2009. All rights reserved.

Rev. 02 — 2 September 2009

4 of 10

PEMB30; PUMB30

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

8. Package outline
2.2
1.8
6

1.1
0.8
5

1.7
1.5

0.45
0.15

46

0.6
0.5
54
0.3
0.1

2.2 1.352.0 1.15

1.7
1.5

pin 1index

1.3
1.1
pin 1 index

123

1
0.25
0.10

0.3
0.2

0.65

3
0.18
0.08

0.27
0.17

0.5

1.3

1

Dimensions in mm

Fig 3.

206-03-16

Package outline SOT363 (SC-88)

Dimensions in mm

Fig 4.

04-11-08

Package outline SOT666

9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number

Package Description

Packing quantity
3000

4000

8000

10000

PEMB30

SOT666---315-2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel

PUMB30

SOT363--115--4 mm pitch, 8 mm tape and reel; T1[2]-115---135

4 mm pitch, 8 mm tape and reel; T2[3]-125---165[1]

For further information and the availability of packing methods, see Section 13.

[2]

T1: normal taping[3]

T2: reverse taping

PEMB30_PUMB30_2

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 02 — 2 September 2009

5 of 10

PEMB30; PUMB30

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

10. Soldering
2.65

solder lands
2.35 1.5

0.4 (2×)

0.6 0.5(4×) (4×)

solder resist
solder paste
0.5(4×)0.6(2×)occupied area

0.6(4×)

Dimensions in mm
1.8

sot363_fr

Dimensions in mm

Fig 5.

Reflow soldering footprint SOT363 (SC-88)

1.5
solder lands
0.3 2.5

4.5

solder resist
occupied area
1.5
Dimensions in mm

1.3

1.3

preferred transport
direction during soldering

2.45
5.3

Fig 6.

Wave soldering footprint SOT363 (SC-88)

PEMB30_PUMB30_2

Product data sheet

sot363_fw© NXP B.V. 2009. All rights reserved.

Rev. 02 — 2 September 2009

6 of 10

PEMB30; PUMB30

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

2.75
2.45
2.1
1.6
solder lands
0.4(6×) 0.25
(2×)

0.538
2

1.7 1.075

0.3(2×)0.55(2×)

placement area
solder paste
occupied area

0.325 0.375(4×) (4×)

Dimensions in mm

1.7
0.45
(4×)

0.6(2×)0.5(4×)0.65(2×)

sot666_fr

Reflow soldering is the only recommended soldering method.

Fig 7.

Reflow soldering footprint SOT666

PEMB30_PUMB30_2

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 02 — 2 September 2009

7 of 10

PEMB30; PUMB30

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

11. Revision history
Table 10.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PEMB30_PUMB30_2

20090902

Product data sheet-PEMB30_PUMB30_1

Modifications:• This data sheet was changed to reflect the new company name NXP Semiconductors,including new legal definitions and disclaimers. No changes were made to the technicalcontent.

• Figure 3 “Package outline SOT363 (SC-88)”: updated• Figure 5 “Reflow soldering footprint SOT363 (SC-88)”: updated• Figure 6 “Wave soldering footprint SOT363 (SC-88)”: updated• Figure 7 “Reflow soldering footprint SOT666”: updated
PEMB30_PUMB30_1

20060331

Product data sheet

PEMB30_PUMB30_2

Product data sheet--© NXP B.V. 2009. All rights reserved.

Rev. 02 — 2 September 20098 of 10

PEMB30; PUMB30

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

12. Legal information
12.1 Data sheet status
Document status[1][2]Product status[3]Definition

Objective [short] data sheet

Development

This document contains data from the objective specification for product development.

Preliminary [short] data sheet

Qualification

This document contains data from the preliminary specification.

Product [short] data sheet

Production

This document contains the product specification.

[1]

Please consult the most recently issued document before initiating or completing a design.

[2]The term ‘short data sheet’ is explained in section “Definitions”.

[3]

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences ofuse of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.

12.3 Disclaimers
General — Information in this document is believed to be accurate andreliable. However, NXP Semiconductors does not give any representations orwarranties, expressed or implied, as to the accuracy or completeness of suchinformation and shall have no liability for the consequences of use of suchinformation.
Right to make changes — NXP Semiconductors reserves the right to makechanges to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications andtherefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are soldsubject to the general terms and conditions of commercial sale, as publishedat http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from national authorities.
Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

PEMB30_PUMB30_2

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 02 — 2 September 20099 of 10

PEMB30; PUMB30

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
56
78
9
10
11
12
12.1
12.2
12.3
12.4
1314

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Packing information. . . . . . . . . . . . . . . . . . . . . . 5
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009.

All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 September 2009
Document identifier: PEMB30_PUMB30_2