PHPT610030PK-Q

PNP/PNP high power double bipolar transistor
28 September 2023

Product data sheet

1. General description
PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted
Device (SMD) power plastic package.
NPN/NPN complement: PHPT610030NK-Q
NPN/PNP complement: PHPT610030NPK

2. Features and benefits
•
•
•
•
•

High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications
•
•
•
•
•
•

Motor control
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Relay replacement

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

Min

Typ

Max

Unit

open base

-

-

-100

V

-

-

-3

A

-

110

180

mΩ

Per transistor
VCEO

collector-emitter
voltageIC

collector current

RCEsatcollector-emittersaturation resistance

IC = -2 A; IB = -0.2 A; pulsed; tp ≤300 µs; δ ≤ 0.02; Tamb = 25 °C

PHPT610030PK-Q

Nexperia

PNP/PNP high power double bipolar transistor

5. Pinning information
Table 2. Pinning information
Pin
SymbolDescription
1

E1

emitter TR1

2

B1

base TR1

3

E2

emitter TR2

4

B2

base TR2

5

C2

collector TR2

6

C2

collector TR2

7

C1

collector TR1

8

C1

collector TR1

Simplified outline
8

7

6

Graphic symbol
5

C1

B2

TR2

TR1

E1
1

2

3

4

LFPAK56D; DualLFPAK (SOT1205)

E2

B1

C2

sym138

6. Ordering information
Table 3. Ordering information
Type number
Package
PHPT610030PK-Q

Name

Description

VersionLFPAK56D;
Dual LFPAK

plastic, single ended surface mounted package(LFPAK56D); 8 leads

SOT1205

7. Marking
Table 4. Marking codes
Type number

Marking code

PHPT610030PK-Q

10030PKPHPT610030PK-Q

Product data sheet

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Nexperia

PNP/PNP high power double bipolar transistor

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

-100

V

VCEO

collector-emitter voltage

open base

-

-100

V

VEBO

emitter-base voltage

open collector

-

-8

V

IC

collector current

-

-3

A

ICM

peak collector current

-

-8

A

IB

base current

-

-0.5

A

Ptot

total power dissipation

[1]

-

1

W

[2]

-

2.4

W

[3]

-

25

W

[1]

-

1.25

W

[2]

-

3

W

[4]

-

5

W

Per transistor

single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C

Per device
Ptot

total power dissipation

Tamb ≤ 25 °C

Tj

junction temperature

-

175

°C

Tamb

ambient temperature

-55

175

°C

Tstg

storage temperature

-65

175

°C

[1]
[2]
[3]
[4]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Power dissipation from junction to mounting base.
Device mounted on a ceramic PCB, Al2O3, standard footprint.
aaa-014341

4
Ptot
(W)
3

(1)

2

1

(2)

0
-75

0

75

(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, standard footprint
Fig. 1.

2

150
225
Tamb (°C)

Per transistor: power derating curves

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PNP/PNP high power double bipolar transistor

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

[1]

-

-

150

K/W

[2]

-

-

62.5

K/W

-

-

6

K/W

[1]

-

-

120

K/W

[2]

-

-

50

K/W

[3]

-

-

30

K/W

Per transistor
Rth(j-a)thermal resistance from in free air
junction to ambient

Rth(j-sp)

thermal resistance fromjunction to solder point

Per device
Rth(j-a)

[1]
[2]
[3]

thermal resistance from in free air
junction to ambient

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
aaa-014342

103
Zth(j-a)(K/W)
102

duty cycle = 1
0.75
0.33
0.2

10

1

0.05
0.01

10-1
10-5

0.5
0.25
0.1
0.02
0

10-4

10-3

10-2

10-1

1

10

102

tp (s)

103

FR4 PCB, standard footprint
Fig. 2.

Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values

PHPT610030PK-Q

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Nexperia

PNP/PNP high power double bipolar transistor
aaa-014343

102
Zth(j-a)(K/W)

duty cycle = 1
0.75
0.33

10

0.2

0.5
0.25
0.1

0.05
1

0.01

10-1
10-5

0.02
0

10-4

10-3

10-2

FR4 PCB, mounting pad for collector 6 cm
Fig. 3.

10-1

1

2

10

102

tp (s)

103

Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values

PHPT610030PK-Q

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PNP/PNP high power double bipolar transistor

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

collector-base cut-off
current

VCB = -80 V; IE = 0 A; Tamb = 25 °C

-

-

-100

nA

VCB = -80 V; IE = 0 A; Tj = 150 °C

-

-

-50

µA

IEBO

emitter-base cut-off
current

VEB = -7 V; IC = 0 A; Tamb = 25 °C

-

-

-100

nA

ICES

collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C
current

-

-

-100

nA

hFE

DC current gain

VCE = -10 V; IC = -500 mA; Tamb = 25 °C

150

220

-

VCE = -10 V; IC = -1 A; pulsed; tp ≤300 µs; δ ≤ 0.02; Tamb = 25 °C

80

210

-

VCE = -10 V; IC = -2 A; pulsed; tp ≤300 µs; δ ≤ 0.02; Tamb = 25 °C

20

100

-

VCE = -10 V; IC = -3 A; pulsed; tp ≤300 µs; δ ≤ 0.02; Tamb = 25 °C

10

40

-

collector-emittersaturation voltage

IC = -500 mA; IB = -50 mA; Tamb = 25 °C

-

-70

-110

mV

IC = -2 A; IB = -200 mA; pulsed; tp ≤300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-220

-360

mV

RCEsatcollector-emittersaturation resistance

IC = -2 A; IB = -0.2 A; pulsed; tp ≤300 µs; δ ≤ 0.02; Tamb = 25 °C

-

110

180

mΩ

VBEsatbase-emitter saturation IC = -1 A; IB = -50 mA; pulsed; tp ≤300 µs; δ ≤ 0.02; Tamb = 25 °C
voltage

-

-0.91

-1

V

IC = -2 A; IB = -200 mA; pulsed; tp ≤300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-1.02

-1.2

V

Per transistor
ICBO

VCEsatVBEon

base-emitter turn-on
voltage

VCE = -2 V; IC = -100 mA; pulsed; tp ≤300 µs; δ ≤ 0.02; Tamb = 25 °C

-

-0.68

-0.9

V

td

delay time

-

20

-

ns

tr

rise time

VCC = -12.5 V; IC = -1 A; IBon = -50 mA;
IBoff = 50 mA; Tamb = 25 °C

-

180

-

ns

ton

turn-on time

-

200

-

ns

ts

storage time

-

350

-

ns

tf

fall time

-

220

-

ns

toff

turn-off time

-

570

-

ns

fT

transition frequency

VCE = -10 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C

-

125

-

MHz

Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C

-

30

-

pF

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PNP/PNP high power double bipolar transistor
aaa-010858

500
hFE

aaa-010859

-2.5
IC
(A)

(1)

400

IB = -50 mA

-45
-40
-35

-2.0

-30

-25
-20

(2)

300

-1.5

-15

-10
200

-1.0

(3)

100

0
-10-1

-0.5

-1

-10

-102

0

-103
-104
IC (mA)

VCE = −10 V(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 4.

-5

0

-1

-2

-3

-4

VCE (V)-5

Tamb = 25 °C
Fig. 5.

Collector current as a function of collectoremitter voltage; typical values

DC current gain as a function of collector
current; typical values
aaa-010860-1.6

aaa-010861-1.2
VBEsat
(V)

VBE
(V)

-1.0

-1.2

(1)

-0.8
(1)

-0.8

(2)

(2)

-0.6

(3)

(3)

-0.4

0
-10-1

-0.4

-1

-10

-102

-0.2
-10-1

-103
-104
IC (mA)

VCE = −2 V
(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C
Fig. 6.

Product data sheet

-10

-102

-103
-104
IC (mA)

IC/IB = 20
(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Base-emitter voltage as a function of collector
current; typical values

PHPT610030PK-Q-1

Fig. 7.

Base-emitter saturation voltage as a function ofcollector current; typical values

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PNP/PNP high power double bipolar transistor
aaa-010862-10

aaa-010863-10

VCEsat(V)

VCEsat
(V)

-1

-1
(1)
(2)

-10-1

-10-1
(1)

(3)

(2)

-10-2

-10-3
-10-1

-10-2

-1

-10

-102

-10-3
-10-1

-103
-104
IC (mA)

IC/IB = 20
(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 8.

(3)

-1

-10

-102

-103
-104
IC (mA)

Tamb = 25 °C(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10

Collector-emitter saturation voltage as afunction of collector current; typical values
aaa-010864

103

Fig. 9.

Collector-emitter saturation voltage as afunction of collector current; typical values
aaa-010865

103

RCEsatRCEsat
(Ω)

102

102

10

10
(1)
(2)

1

(2)

10-1

10-2
-10-1

-1

-10

-102

10-2
-10-1

-103
-104
IC (mA)

-1

-10

-102

-103
-104
IC (mA)

Tamb = 25 °C(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10

Fig. 10. Collector-emitter saturation resistance as afunction of collector current; typical values

Product data sheet

(3)

10-1

IC/IB = 20
(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

PHPT610030PK-Q

(1)

1

(3)

Fig. 11. Collector-emitter saturation resistance as afunction of collector current; typical values

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PNP/PNP high power double bipolar transistor

11. Test information- IB
input pulse(idealized waveform)

90 %- I Bon (100 %)10 %- I Boff

output pulse(idealized waveform)

- IC
90 %

- I C (100 %)

10 %
t
td

ts

tr
t on

tf
t off

006aaa266

Fig. 12. Transistor switching time definition
VBB
RB(probe)oscilloscope
450 Ω

VCC
RC

Vo

(probe)
450 Ω

R2

VI

oscilloscope

DUT

R1
mgd624

Fig. 13. Test circuit for switching times

Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.

PHPT610030PK-Q

Product data sheet

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PNP/PNP high power double bipolar transistor

12. Package outline
Plastic single ended surface mounted package LFPAK56D; 8 leads

E

SOT1205

A

A

b1

c1

L1

mounting
base

D

H

D1
D2

L
1

2

3

e

b
(8x)

4
w

X

c

A

E1
E2

A1

C
θ
Lp

detail X

0

2.5

mm

5 mm

scale

Dimensions
Unit

y C

D(1) D1(1)

D2
(ref)

E(1) E1(1)

E2

4.4

0.25 0.30 4.70 4.55

3.5

5.30

1.8

0.85

4.1

0.19 0.24 4.45 4.35

3.4

4.95

1.6

0.60

A

A1

b

b1

max 1.05
nom
min 1.02

0.1

0.50

0.0

0.35

c

c1

e
1.27

H

L

L1

Lp

6.2

1.3

0.55 0.85

5.9

0.8

0.30 0.40

Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
OutlineversionReferences
IEC

JEDEC

JEITA

w

y

θ

0.25

0.1

8°
0°
sot1205_po

Europeanprojection

Issue date
14-08-21
14-10-28

SOT1205

Fig. 14. Package outline LFPAK56D; Dual LFPAK (SOT1205)

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PNP/PNP high power double bipolar transistor

13. Soldering
Footprint information for reflow soldering of LFPAK56D package

SOT1205

5.85
0.57

0.025

0.57

0.7

1.97

0.65

1.27

1.9
3.325
3.175

3.2
2.0
1.275

0.8
1.875

2.1
2.7

1.0

3.85

3.975
0.025

1.1

1.15

0.65

1.27
1.1

1.44

solder landsolder land plus solder paste

solder paste deposit

solder resist

occupied area

Dimensions in mm

Issue date

0.7

14-07-28
20-04-20

sot1205_fr

Fig. 15. Reflow soldering footprint for LFPAK56D; Dual LFPAK (SOT1205)

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Product data sheet

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PNP/PNP high power double bipolar transistor

14. Revision history
Table 8. Revision history
Data sheet ID
Release date

Data sheet status

Change notice

Supersedes

PHPT610030PK-Q v.1

Product data sheet--

PHPT610030PK-Q

Product data sheet

20230928

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Nexperia

PNP/PNP high power double bipolar transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death orsevere property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.

15. Legal information
Data sheet status
Document status[1][2]

Product
status [3]Definition

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.

Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included hereinand shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement bevalid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.

Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outsideof Nexperia.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability forany assistance with applications or customer product design. It is customer’ssole responsibility to determine whether the Nexperia product is suitableand fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards tominimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for thecustomer’s applications and products using Nexperia products in order toavoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement isconcluded only the terms and conditions of the respective agreement shallapply. Nexperia hereby expressly objects to applying the customer’s generalterms and conditions with regard to the purchase of Nexperia products bycustomer.
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or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
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Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.

Trademarks
Notice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia producthas been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted tobe suitable for use in life support, life-critical or safety-critical systems or

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PNP/PNP high power double bipolar transistor

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 6
11. Test information.......................................................... 9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13© Nexperia B.V. 2023. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 28 September 2023

PHPT610030PK-Q

Product data sheet

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