24P017-O
Fabrication of Graphene Film on Cu Substrate using Microwave Plasma
Enhanced Chemical Vapor Deposition
マイクロ波プラズマCVD法を用いた銅基板へのグラフェン膜の作製
Masateru Naito1, Mineo Hiramatsu1, Hiroki Kondo2 and Masaru Hori2
内藤全晃1, 平松美根男1，近藤博基2，堀 勝2
1

Department of Electrical and Electronic Engineering, Meijo University
1
1-501Shiogamaguchi, Tempaku, Nagoya 568-8502, Japan2
Department of Electrical Engineering and Computer Science, Nagoya University
2
Furo-cho, Chikusa, Nagoya 464-8603, Japan1
名城大学大学院理工学研究科電気電子工学専攻 〒468-8502 名古屋市天白区塩釜口1-501
2名古屋大学大学院工学研究科電子情報システム専攻 〒464-8603名古屋市千種区不老町
Graphene is a material of growing technological importance owing to their outstanding properties andnumerous actual and potential applications. Extensive efforts have been done in the preparation ofgraphene by a variety of methods including thermal chemical vapor deposition (CVD) on Cu substrate. In
this study, we attempted to fabricate graphene films on Cu substrate using microwave plasma enhanced
CVD. The graphene film fabricated on Cu substrate was evaluated by scanning electron microscope andRaman spectroscopy.

1. Introduction
Graphene is the hexagonal arrangement ofcarbon atoms forming a one-atom thick planar
sheet. An ideal graphene will spread flat, and thiscan be classified as two-dimensional carbon.
Graphene is a promising material for future
electronic applications due to its uniqueelectronic properties [1]. Graphene has shownpromising applications as ultra-sensitive gas
sensors [2], transparent electrodes in liquid
crystal display devices [3], and large-capacity
electrodes in Li ion batteries [4]. Various
methods have been reported for the synthesis ofgraphene, including (i) mechanical exfoliationfrom highly oriented pyrolytic graphite (HOPG)[5], (ii) chemical exfoliation from bulk graphite[6], (iii) thermal decomposition of carbonterminated SiC [7]. Recently, fabrication ofgraphene films has been reported on Cu substrateusing chemical vapor deposition (CVD). For
example, graphene was fabricated on copper foils
at high substrate temperatures up to 1000 ºC
using CVD [8]. On the other hand, microwave
plasma-enhanced chemical vapor deposition(MWPCVD) has been demonstrated for thesynthesis of carbon nanotubes, carbon nanowalls,carbon nanosheets and diamond films.
In this work, we attempted to fabricate
graphene films on Cu substrate at lower
temperature of 750 °C using MWPCVD.

this study. Home-made ASTeX-type MWPCVD
reactor consists of a cylindrical stainless steel
chamber. The microwave (2.45 GHz) is coupledfrom the rectangular waveguide into the cavity via
an axial antenna. A discharge called a “plasma ball”
is generated above the substrate [9].
A mixture of CH4 and H2 was used as the sourcegas. The flow rates of CH4 and H2 were 20 and 180sccm, respectively. The growth experiments werecarried out for 30 min at microwave power of 1100
W, total pressure of 70 Torr, and substratetemperature of 750 °C. The deposits on the Cu
substrate were evaluated by scanning electron
microscope (SEM) and Raman spectroscopy.

2. Experimental
Figure 1 shows the MWPCVD system used in

3. Results and discussion
Figure 2 shows the top view SEM image ofMicrowave power(2.45GHz)
Quartz Window
Plasma ballCu substrate
CH4H2Mass flowcontroller

To pumpMo plate

Fig.1 Schematic of MWPCVD system.

carbon film on Cu substrate. It was confirmed thatthe thin films such as carbon films were depositedon the Cu substrate.
Figure 3 shows the Raman spectrum of deposits
grown on Cu substrate. The main features in theRaman spectra of carbon films are, so-called, Gband and D band peaks, which lie at around1580-1590 cm-1 and 1350-1360 cm-1, respectively,
for visible light excitation [10]. The most prominent
feature in the Raman spectrum of graphene isreported to be the 2D peak at around 2700 cm-1, andits position and shape can be used to clearlydistinguish between single-layer, bilayer, andfew-layer graphenes [11]. Although Raman spectra
were taken at several positions on the deposits,distinct 2D peak could not be confirmed in this case,as shown in the Raman spectrum of Fig. 2.
At present, we are carrying out growthexperiments by changing the substrate bias, positionon the Mo plate, gas mixing ratio, as well as thesubstrate temperature.

10μm
Fig. 2 The top view SEM image of carbon film grown on
Cu substrate

G bandD band2D bandFig. 3 Raman spectrum of carbon film grown on Cu
substrate.

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