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deduced from a series of Auger electron patterns from vari­
ous Ni thickness. (e) Thickness dependence of Ni occupa­tion at each atomic layer.

296  úËõ Sept. 2012 Vol.25 No.5·ñÅ

éB±êÜÅ[ÌdqóÔð²×éÀ±Iè@Í¸v[u°÷¾@30) â§ßdq°÷¾@31) ÈÇÉÀçêÄ¢½B»±ÅäXÍñÜøÊðpµCn½üÉ

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Emission angle dependence of the photoelectron spectra for(a) core levels and (b) valence band from graphene bilayerlm grown on the SiC(0001) surface. Photoelectron kinetic
energy was xed to 500 eV.

»êé FFP ÌõdqðIðIÉªõµC[´q©çÌdqóÔÌoÉ§íµ½B
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C1s photoelectron angular distribution patterns from (a) thegraphene grown on the inclined 4H_SiC(0001) surface and(b) crystal graphite. (c) A pair of C 1s photoelectron angu­
lar distribution patterns from graphene around [21 30] direc­
tion excited by left and right circularly polarized x­ray forstereo viewing. (d) The structure model of atomic arrange­
ment around the steps.

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î X üÅãN·éÆ¿dqÑÌõdqp^[ÉàñÜøÊª»êé±Æ©çCTCgIðIÈdqóÔðø«v\Êðp·é±ÆÅA[`FA^ÉWOUO^Ì¼^CvÌ[ÉÂ¢ÄÌðÍÉpÅ«éBo·±ÆªÅ«é10)BFig. 9(a)Í Fig. 8(a)Å¦µ½¿dqÑÌõdqp^[Æ¯¶àÌÅéBÊ¼ûü a ÉÍîÂÌ SiC ©çÌõdqÌñ^ªå«¢B¼ûCC 1sÌõdqp^[ÅÍ¾é¢P_ª»êÄ¢éûü b6.

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Fig. 10 Í¿Æoíðuõvª¬Üê½LõÆ¿ÍC¿å¤ÇñÜOªdÈè¤_ÉµCSiC eÛÉ©½ÄÄCúËõªÍÉæÁÄÇÌæ¤ÈîñðÝXãÌOtF©çÌõdqÌ­xªå«­ÈÁÄo·©C}Ä»µ½àÌÅéBáBm«Ì¶ÌÉ°¢éBÅãÉÊàÌ C_C ÉÁ½ûüÌ FFP ª»ê÷@iÀóÔ rjCªõ@iGlM[ E jCª@iéûü g ÌMÉÍCXebvßTÌOtFÌA[Ô tjCñÜ@igóÔ kjªBêÄ¢éBè@ðgÝé¢Í÷ÈªÌîñªÜÜêéB

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Fig. 9(b)Í±êçÙÈéûü©çø«oµ½¿dqÑXyr) âÔªðªè I(E, tjCÜ½{eÅÐîµ½õdqñ

NgÅÜªõ I(E, k) Æ¢Á½ïÅ`FA^Ì[CéB¿dqÑªUÌøÊðæè­½ßÉÏZ·éÍÍðuA][æèàå«­µÄ¢éBbéBæOÉl¢ãúËõÌoêÉæèCVµ¢õÌ÷¬r[

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Fig. 8

Valence band photoelectron angular distribution patterns
from (a) the graphene grown on the 4H_SiC(0001) surfaceand (b) crystal graphite. Photoelectron kinetic energy was
set to 500 eV. Binding energy was 5 eV. Hexagonal mesh in­dicates the surface Brillouin zones.

Fig. 9Fig. 10

Schematic diagram showing relation between r (real space),k (reciprocal space), E (energy) and t (time). They cor­
respond to microscopy, diraction, spectroscopy, and dy­
namics measurements, respectively. Combination of the ex­
isting two methods leads to a possibility of new methodolo­
gy development.

(a) Valence band photoelectron angular distribution patterns and (b) the site specic photoelectron spectra fromthe graphene grown on the 4H_SiC(0001) surface.

298  úËõ Sept. 2012 Vol.25 No.5

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ÒÐî
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E­mail: matuims.naist.jpêåFúËõÉæé\ÊªÍ@J­mªðn
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êåF\Ê¨wmªðn
1978Nåwåw@wn¤ÈCm
ÛöC¹B83Nwmiåw)Båw¨«¤³±EõCåwwèCåãåwîbHw³öðoÄC
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à PxõÈw¤Z^[ §äÉîñòå §äO[vå²¤õE­mail: matusitaspring8.or.jp
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»EB

Innovations in Photoelectron Diraction:
Local Electronic Structure Probing byDiraction Spectroscopy
Fumihiko MATSUI

Graduate School of Materials Science, Nara Institute of Science andTechnology
8916_5 Takayama, Ikoma, Nara 630_0192 Japan

Tomohiro MATSUSHITAJASRI/SPring­8
1_1_1 Koto, Sayo, Sayo, Hyogo 679_5198 Japan

Hiroshi DAIMON

Graduate School of Materials Science, Nara Institute of Science andTechnology
8916_5 Takayama, Ikoma, Nara 630_0192 Japan

Abstract

We have been developing a new approach for investigating the properties of subsurface region in
atomic level non­destructively. Photoelectron and Auger electron diractions are element speciclocal structure analysis methods. Atomic arrangements around photoelectron emitter atom can be
deduced from the positions of forward focusing peaks and radii of diraction rings around them.
By combining these diraction techniques with core level spectroscopies\we call it diraction
spectroscopy , one can get access to each atomic site structure and have their electronic property
information individually. We have applied this method to study various subsurface structures andelectronic properties.

300  úËõ Sept. 2012 Vol.25 No.5