Ultrafast Transient Absorption Spectrometer
Excellent performance ata high repetition rate

Measurement range from
UV to MIR

Market-leading sensitivity

Modules for time-resolved,
and multi-pulse experiments

High-level automation in
a compact footprint
Layout example

HARPIA-TA optical layout for pump-probe experiments
L4Probe beamSpectraldetection∆τL3PD
PM2

Pump beamCH

λ/2 CF NDF2 AA
fs probe
mpSample

fs pu

L2

Reference beam
WLSC generation

λ/2 NDF1AL1CFPM1

A– apertureC– crystal
CF– spectral filter
CH– chopperF– filter
L– lens
PD– photodiodePM– parabolic mirror
NDF – neutral density filter
WLSC – white light supercontinuumΔτ– delayλ/2– half-wave plate

Specifications
Configuration
Measurement range1)

UV-VISVIS

VIS-NIRUV-VIS-NIR

MIR

350 – 1100 nm

460 – 1100 nm

460 – 1600 nm

350 – 1600 nm

2000 – 13000 nm

Pump range
Delay range (resolution)

240 – 2200 nm

240 – 700 nm

8 ns (8.3 fs)

4 ns (4.2 fs)

Temporal resolution≤ laser pulse duration or better

Laser repetition rate

1 – 200 kHz 2)

Maximum data acquisition rate

3 kHz

Physical dimensions (L × W × H) 3)

730 × 420 × 160 mm1)

For laser pulse duration of up to 400 fs.

2)Higher repetition rates available; contact sales@lighton.com for details.

3)

Without external spectrograph.

Laser repetition rate

DANGER: VISIBLE AND/OR INVISIBLE
LASER RADIATION AVOID EYE OR SKINEXPOSURE TO DIRECT, REFLECTED OR
SCATTERED RADIATION

CLASS 4 LASER PRODUCTWWW.LIGHTCON.COM

Differenc

Performance at high repetition rates

-0.5

-1.0
PHAROS, 64 kHz

1 kHz
The HARPIA spectroscopy system achieves an excellent signal‑to‑noise ratio at a high Ti:Sapphire,
repetition
rate and low energy
excitation conditions. The graphs below compare the signal-to-noise ratio -1.5(SNR) 500
of difference
absorption
spectra550
600
650 obtained
700
with a Ti:Sapphire laser operating at 1 kHz and a PHAROS laser operating at 64 kHz with the sameacquisition
Wavelength, nm time.

400

Signal-to-noise ratio

Difference absorption, mOD

0.5

0.0

-0.5

-1.0300

200

100
PHAROS, 64 kHz
Ti:Sapphire, 1 kHz

PHAROS, 64 kHz
Ti:Sapphire, 1 kHz-1.55005506000700

65002Wavelength, nm

46810Maximum signal, mOD

SoftwareService App

CarpetView

Controland data acquisition software
300

Data analysis software

A single software solution for all measurement
modes,
200 featuring:An ultrafast spectroscopy data analysis software,featuring:• User-friendly interface• Advanced data wrangling: slicing, merging, cropping,smoothing, fitting, etc.

Signal-to-noise ratio

400

• 100
Measurement presets
PHAROS, 64 kHz• Measurement noise suppression• Advanced global and target analysis• Diagnostics and data export• Probe spectral chirp correction, calibration anddeconvolution•Ti:Sapphire, 1 kHz

002 support
4 and updates
68Continuous

10signal, mOD• API for remoteMaximum
experimentcontrol using third-party
software (LabVIEW, Python, MATLAB)• Support for 3D data sets (2D electronicspectroscopy, fluorescence lifetime imaging)• Publication-ready figure preparation and data export

Drawings
Drawings of HARPIA system with HARPIA-TB
and HARPIA-TF modules
697
324.5
73

161
36249.5

125

125

183
125

4730670

HARPIA-TA516
100

HARPIA-TF

730
1301

REV. 240522 | SALES@LIGHTCON.COM

275

420

186672

HARPIA-TB

151
36

Femtosecond Lasers | Wavelength-Tunable Sources | OPCPA Systems | Spectroscopy Systems | Microscopy Sources | Applications

Best-effort SNRs, achieved with HARPIA-TA
spectrometer driven by a Ti:Sapphire laser at 1 kHz(magenta) and a PHAROS laser at 64 kHz (blue)

Measured difference absorption spectra of CdSe/ZnS quantum dots using low- and high-repetition ratelasers with 5 s acquisition timeModules and accessories

Applications | Microscopy Sources | Spectroscopy Systems | OPCPA Systems | Wavelength-Tunable Sources | Femtosecond Lasers

Time-Resolved Fluorescence Module
Time-resolved fluorescence spectroscopy carries informationon the molecular processes in the excited states. HARPIA-TF
combines different measurement modes, thus allowing theobservation of fluorescence dynamics at different time scales.

Using a high-repetition-rate PHAROS or CARBIDE laser, thefluorescence dynamics can be measured while exciting thesamples with pulse energies down to several nanojoules.​Kerr gate
Easy to use. Simpler alignment and maintenance. The entire
spectrum is measured at once.

Principle of Kerr gate spectroscopy
Polarizer

Fluorescence

Fluorescence upconversion (FU)
Better temporal resolution for measuring fast fluorescence events.
45°

Time-correlated single-photon counting (TCSPC)
Fluorescence lifetime measurements are extendible to measurephosphorescence signals.

Kerr medium

Analyser

Gate pulse
Gated fluorescence

Specifications
ModuleHARPIA-TF

ModeSpectral range

Kerr gate

Fluorescence upconversion

TCSPC

250 – 1100 nm

330 – 820 nm

220 – 820 nm 1)

Pump range

240 – 2200 nm

Temporal resolution

400 – 500 fs≤ laser pulse duration or better

Max measurement range< 180 ps 2)

8 ns

Delay resolution
Gate beam requirements
Compatible with1)

Spectral range is extendable to NIR; contact
sales@lighton.com for details.

2)

High-speed detector available (< 50 ps); contact
sales@lighton.com for details.

3)

∞ 3)

8.3 fsn/a

20 – 25 μJ

n/a

TCSPC

Kerr gate or fluorescence
upconversion

Maximum measurement range depends
on the phosphorescence signal.

DANGER: VISIBLE AND/OR INVISIBLE
LASER RADIATION AVOID EYE OR SKINEXPOSURE TO DIRECT, REFLECTED OR
SCATTERED RADIATION

CLASS 4 LASER PRODUCTFlash Photolysis – Nanosecond TA Module
The flash photolysis experimentis designed to measure thelong-lived states of molecularsystems.

Specifications
HARPIA-TA module

UV-VIS

The principle of flash
photolysis is analogous to
the femtosecond transientabsorption (TA) experiment butwith a delay in a nanosecond–
millisecond range.

Measurement range

450 – 1100 nm

ModuleHARPIA-TA-FP

Delay range

VIS

VIS-NIR

450-1600 nm

VIS

350 – 1100 nm

up to 8 ms

Delay resolution
Temporal resolution

HARPIA-TA-FP-UVUV-VIS-NIR UV-VIS

VIS-NIR UV-VIS-NIR
350 – 1600 nm

up to 500 μs
100 ps2 ns

Maximum data acquisition rate

1 ns
3 kHz

Third Beam Delivery Module
When standard spectroscopy tools are not enough to unravel the intricate ultrafast dynamics of photoactive systems, multi-pulse timeresolved spectroscopic techniques can be utilized to yield additional insight.

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Femtosecond stimulated Raman scattering (FSRS)
Delivering frequency-narrowed picosecond pulses allows toperform FSRS measurements. It is a time-resolved spectroscopy
technique for observing changes in the vibrational structure of
optically excited molecular systems.

Multi-pulse time-resolved transient absorption
Multi-pulse time-resolved spectroscopic techniques are a way tomanipulate the reactions and access new regions of the higher
excited states.

ModuleHARPIA-TB

ModePump for multi-pulse experiments

Wavelength range

240 – 700 nm / 450 – 2200 nm

Delay range (resolution)

NIR probe
1600 – 2600 nm
4 ns (4.2 fs)

Microscopy Module
An add-on to the HARPIA-TA spectrometer, enabling spatiallyresolved pump-probe measurements.
The microscopy module features a motorized XYZ sample
stage, broadband, and monochromatic probe options, as wellas transmission and reflection modes, and brightfield mode
to observe the sample and to determine the pump-probe

Switching between bulk and microscopic pump-probe modes is
implemented using self-contained modules, allowing experimentreconfiguration without disturbing the sample.

Microscopy module

spot location.

Specifications
ModuleSpatial resolution 1)

HARPIA-MM
monochromatic

polychromatic< 2 µm< 10 µm

Full spectral range

460 – 1100 nm

Pump range

240 – 700 nm

Bulk module

Temporal resolution

500 fsMaximum working
distance 2)

13 mm

Sample motion range

13 × 13 × 13 mm1)

White light generation has axial color at focus and wavelength-dependent mode size
and NA. Focused white light will exhibit focus shift and spot size variation dependingon the chosen spectral range. Polychromatic spot size is given at full spectral range,
monochromatic is at 500 nm with a 10 nm bandwidth.

2)

Depends on the objective used.

Options

Cryostat Mounting

Sample Stirrer

Motorized Pump
MirrorExternal Beam
Steering

Beam Profiler

HARPIA-TA supports
cryostats that can bemounted externally orinternally.

Liquid samples aremixed up to avoid
overexposure andensure fresh samples.

Used to automatically
optimize pump andprobe overlap.

To lock the opticalbeam paths for
OPA wavelenghts(350 – 1100 nm).

For checking beam
shape/size at any
position before/
after measurement
inside HARPIA.

www.phototechnica.co.jp
REV. 240522 | SALES@LIGHTCON.COM〒336-0017 埼玉県さいたま市南区南浦和 1-2-17

TEL:048-871-0067 FAX:048-871-0068

e-mail:voc@phototechnica.co.jp

Femtosecond Lasers | Wavelength-Tunable Sources | OPCPA Systems | Spectroscopy Systems | Microscopy Sources | Applications

Specifications

Transient Grating Spectrometer
Carrier diffusion coefficientin a matter of minutes
Non-invasive
measurement techniqueFully automated andcomputer controlled
Continuous setting ofgrating period
Sensitivity down to µJ/cm²
excitation level
Advanced measurement
and analysis software
Photoluminescence (PL)measurement option

Specifications
Model

HARPIA-TG is a transient grating spectrometer for the measurementof carrier diffusion and lifetime. Measurements are based on thelaser-induced transient grating (LITG) technique. This method enables
simultaneous observation of non-equilibrium carrier recombinationand diffusion by all‑optical means.

HARPIA-TG

Grating recording wavelength

340 – 560 nm

1)

Probe wavelength 2)

1030 nm

Grating period

1.15 – 15 μm3)

Pulse duration< 290 fs

Delay range

Up to 8 ns

HARPIA-TG allows the characterization of electrically non‑conductive
or non-fluorescent samples. It is suitable for semiconductors materials
and derivatives, e.g., silicon carbide (SiC), gallium nitride (GaN),
perovskites, organic and inorganic solar cells, quantum dots, and evencomplex nanostructures such as quantum wells.

MEASUREMENT RANGES
Diffusion coefficient

0.1 – 50 cm2/s

Carrier lifetime

1 ps – 80 ns1)

Extendable to long-wave VIS/NIR. Contact
sales@lightcon.com for details.

DIMENSIONS
Physical dimensions (L × W × H)

730 × 420 × 188 mm2)

SH (515 nm) or OPA-based probe is available uponrequest. Contact sales@lightcon.com for details.

3)

Depends on the excitation wavelength.

DANGER: VISIBLE AND/OR INVISIBLE
LASER RADIATION AVOID EYE OR SKINEXPOSURE TO DIRECT, REFLECTED OR
SCATTERED RADIATION

CLASS 4 LASER PRODUCTHARPIA-TG principal scheme

ODLProbe beam∆τdttemins
Tra oberp

PD
Pump beamPD

Beam separator

teac
ffr e
Di robpCH BSdSample

PDBSCHODLPDPMθΔτ

– beam splitter– chopper– optical delay line
– photodiode– parabolic mirror– intersection angle– delay

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Performance
GaN

Diffusion length of GaN
as a function of fluence

0.8

1.5

1.0

0.4

0.6
Front-side
Back-side

0.4
0.2
0.0

10100
Excitation fluence, µJ/cm²

Diffusion length, µm

Front-side
Back-side

Carrier lifetime, ns

Diffusion coefficient, cm²/s

2.50.51030 nm probe wavelength.

Carrier lifetime of GaN
as a function of fluence

Diffusion coefficient of GaN
as a function of fluence

2.0structural quality and higher defect density at the interface between
the sapphire substrate and GaN. Measurements were performed
using HARPIA-TG combined with CARBIDE-CB5 laser and I-OPA.
Measurement conditions: 60 kHz, 355 nm pump wavelength,

100.3
Front-side
Back-side

0.2
0.1
0.0100
Excitation fluence, µJ/cm²

10100
Excitation fluence, µJ/cm²SiC
Silicon carbide (SiC) is a compound semiconductor with uniqueproperties, valued for its high thermal conductivity, wide bandgap,
and excellent electrical performance. In SiC devices, where
high-frequency, high-temperature, and high-voltage operationis common, managing carrier diffusion is particularly critical toensure efficient and reliable device performance, making it a key
consideration in SiC semiconductor technology.

Carrier lifetime of SiC
as a function of fluence

Diffusion coefficient of SiC
as a function of fluence

Diffusion length of SiC
as a function of fluence
0.8

1.50

2.75
2.502.25
2.00

Diffusion length, µm

1.25

3.00

Carrier lifetime, ns

Diffusion coefficient, cm2/s

3.25

1.00
0.75
0.50
0.25

1020501000.00

10Excitation fluence, µJ/cm²

2050
Excitation fluence, µJ/cm²

100

0.7
0.6
0.5
0.4
0.3

102050
Excitation fluence, µJ/cm²Drawings

Recommended layout

HARPIA-TG drawing

HARPIA-TG with CARBIDE-CB5 and I-OPA

125

747
730

1000 mm30

Inputs(optional)

440
420

Inputs

36 55

184.5
188.330833
831
747

125

Inputs(optional)

1000 mm

www.phototechnica.co.jp
REV. 240522 | SALES@LIGHTCON.COM

100〒336-0017 埼玉県さいたま市南区南浦和 1-2-17

TEL:048-871-0067 FAX:048-871-0068

e-mail:voc@phototechnica.co.jp

Femtosecond Lasers | Wavelength-Tunable Sources | OPCPA Systems | Spectroscopy Systems | Microscopy Sources | Applications

The graphs below indicate the carrier diffusion coefficient, diffusion
length, and lifetime of GaN at the back and at the front of the layer
as a function of fluence. The thicker the GaN, the better the qualityof the grown layer due to better coalescence. It is evidenced
by the lower diffusivity and shorter lifetimes that indicate poor