Ⅱ-9. Instrumentation

RIKEN Accel. Prog. Rep. 51 (2018)

Development and test of the dual-gain ASIC preamplifier boards for
the GLAST silicon-strip detectors
V. Panin,∗1 Z. Elekes,∗2 Z. Halász,∗2 G. Hegyesi,∗2 C. Dósa,∗2 L. Trache,∗3 A. Chilug,∗3 I. Stefanescu,∗3D. Tudor,∗3 M. Sasano,∗1 L. Stuhl,∗1,∗4 J. Gao,∗1,∗5 K. Yako,∗4 Y. Kubota,∗1 Z. Yang,∗1 Z. Yoneda,∗1J. Zenihiro,∗1 Z. Korkulu,∗1 E. Takada,∗6 H. Baba,∗1 and T. Uesaka∗1,∗4Dual-gain ASIC preamplifier boards have been developed for the GLAST-type silicon trackers aiming
at coincident measurements of heavy ions and protons
from the breakup reactions in HI-proton experiments
at SAMURAI.1) The dual-gain ASIC chips were successfully tested in the previous HIMAC experiment2)
using a prototype printed-circuit board (PCB) withlimited readout capabilities. The new design of thePCB has been developed in MTA Atomki (Hungary)in collaboration with RIKEN Nishina Center based on
the previously established ASIC technology.
A single PCB is equipped with two ASIC chips forthe instrumentation of 16 strips in total of a siliconstrip detector. Preamplified low-gain and high-gain
output signals from the chips are separated on the PCB
and sent to the external processing circuit HINP,3)
which implements triggering and amplifier functions
for further signal processing. In addition, each PCB
is equipped with an auxiliary connector, which distributes the test pulse signal as well as the bias voltage for the chips and silicons sensors. Four PCBs canbe assembled into a compact stack-like structure, as
shown in the Fig. 1, which can be mounted close tothe silicon sensor to enable operation of the preamplifiers inside the vacuum chamber.
Input signal from the SSD

ASIC

Low-gainoutputto HINP

Bias and test signal inputs

ASIC

High-gain
outputto HINP

Fig. 1. Preamplifier boards for the GLAST silicon trackers.
The left figure shows a single PCB. The right figure
shows the assembly of the four PCBs into a compactstack.
∗1
∗2
∗3
∗4
∗5
∗6RIKEN Nishina Center
MTA Atomki, Debrecen, Hungary
IFIN-HH, Bucharest-Magurele, Romania
Center for Nuclear Study, University of Tokyo
School of Physics, Peking University
National Institute of Radiological Sciences (NIRS)- 148 -

GLAST SSDs

beam

PCB stacksupport and coolingframe for the PCBs

Fig. 2. Arrangement of the GLAST silicon detectors withpreamplifier boards for the test experiment in HIMAC.

The four new preamplifier boards were manufactured in MTA Atomki and were sent to RIKEN for
the test measurements. The test was carried out inthe parasitic mode during the H391 experiment in HIMAC.4,5) A double layer of the GLAST silicon detectors and the preamplifier PCBs were arranged together
inside a vacuum chamber, as shown in Fig. 2. Thirtytwo horizontal strips and 32 vertical strips were readout by the PCBs. The entire structure was exposed
to an incident beam consisting primarily of 6 He ionswith a small contamination of 3 H and 9 Li particles
at an energy of 123 MeV/nucleon and average beam
rate of 2×104 particles/second. The temperature of
the ASIC chips was continuously monitored via a setof thermoelements integrated into the support structure in close proximity to the chips. The temperaturestabilized around 36◦ C throughout the measurements.
The signals from Z = 1, 2, and 3 were successfully
observed in the measurements, which allowed us to reconstruct the individual particle tracks in the silicondetectors. A detailed analysis of the experimental data
is currently in progress.
References
1) V. Panin et al., RIKEN Accel. Prog. Rep. 48, 53 (2015).
2) V. Panin et al., RIKEN Accel. Prog. Rep. 49, 164(2016).
3) G. L. Engel et al., Nucl. Instrum. Methods Phys. Res.
A 573, 418 (2007).
4) M. Sasano et al., in this report.
5) L. Stuhl et al., in this report.