
emk

T



D(E)



E



EF

"#$

V

%&'

d

()*!+-,-!+

Ea

123456 (Ea = V/d)F

783456 (F = βEa)

β59:;

J<=>?r

$@A!BCDt(y), v(y)NordheimE

φ

FGE

q



ε0

HI



!

J

!

./0

CNT

1.
)!K-LM!NCNT
TUVWQ,!X<Y(

O1991PQRS
ZZ)!K-LM!NMWMT
defgh[1-1]iFig. 1-1Uj
n

o

:[\]^
_`abcaTEMkHlmZi

pDO5q7nmQrfOs1µm_

CNT

tufgavwiCNTxyzn_,|}X~

pD{ff

1fOQ`h4_aQ

lyh\`w5<=_`alUchiVaQ,!X<UVw

xfgh1995PUOQ5<=UEZwtuxZU4fgavw[1-2, 1-3]i
CNTOQUQ"@~¡¢|£¤¥Qd¦§QX¨©Q&ª«¬©­®

¯¬x°±fgQ²³x´c\gaµhi¶UQ
FEFPDField Emission Flat Panel Display

U·v

aOQQr¸¹Qª¯ºQ»¼½¾­¶¿lÀÁw$@A!_`aQj

Âd²³U]Ãb

Ä¾xÅxghi`[`QÆ

_OÇ4WQ10PÈ`hÉÊyQË34¯¬ÌÍwFEFPDÎÏÐÑU·vafÁQÒÓ¬ÔÕUÖ`av4vi
jnUOQCNT®

×4QjgxØÙ_ÚÛgwvÃz[ÜÝUVw²³ÞßxÍwVUeÁwinnOQCNT
4_j


ÜW
àá3

âãälåæ`hQCNT

çlèéêµ=Zhcáë¥+¥

_ìíîlïðhvihÒ`Qo.

ñUV

WQ>?lòó_Zw&ª«¬CNT
©UôõléZwi

2.

CNT


1991P

1]iCNTOQj¶ynm [ \ MWNT

3UyÍwhcQ`avwiSWMT
s 100nm  

è{D0.4Íw

xQèOQMWNTycQDyçU4
aµavwiïðwVUQ

xdefgh[2-DxK-ø!A!ù¥úûüyýþUÍWQ`[yQµ4,|}X~lzÒ4ÃQïZwVUQ

4

x°±fgQOQ,|}X~107UÖZwCNTyfgavwihQCNT¶Q¶U3¶OCNT
`QÃhyíUVW_`aÁwòóxÍ

wi
2.1. CNTí

CNTOQ"¥~1^
chlzi%ch&

deUöµQ1993PQ÷^)!K-LM!NSWMT

3Uy6Q!Þ"#

@~$!Xngl"#_v



MWMT

Fig. 1-1 The observation by TEM of multi-wallcoaxial nanotubes with various innerand outer diameters, di and do, andnumbers of cylindrical shells N reported
by Iijima in 1991: (a) N=5, do=67Å; (b)N=2, do=55Å; and (c) N=7, di=23Å,
do=65Å [1-8].

f(w[UVaQ)*l%!Þ"_'+,lhCNT

l-wn_xçÍwij

O)¥.

/¢_01gw+,UVa2fgav
wijgOFig. 2-1Uym`aÍwVUQCNT
345o6A)¥7X~(Ch) lQàá

"7X~a1Qa2

ïðwxQË34<lFig. 2-2UmZi¨89UaCh:n•a1;m•a2:(n,m)_`Q<ÌOQ(5,5) ­_ZihQθ O=>_?ÛgQ@

<

2.2. CNT

VUAB



2n + mθ = arccos 2 n 2 + nm + m2 
4·Qnn θ(0° ≤ θ ≤ 30°)
ElF`h9GÍwivxQ¶USWMT

3Uvlyh\ZiHIOJKU

de[\6PQ

CNTOQRSTx,!X<UVW"!¤

CDOQ!Þ")¥7X~,!X<

1985PU·w"!¤
èb

fgwi

n

L

Þ

ÓMl`avwoUQ"

¥~NY(

OP

:[\defghij

CNTOMWNTÍhièb

SWNTyQRSTlUWnVW9f(h"¥~Xl
Y(U¬vwn_-fghiO
',!X<yÂdfgavwin
Z[x\4Ã]

vCNT

ÞOQ

Ußvav

wi,!X<U^¬fgw_34`alFig. 2-3UmZi
b¤!c!de¤!c!deOQFig. 2-4UmZV4l¬vaQ"¥~A!f@~UQRST
lghwn_Q]

vSWNTlif(wn_xµwÞÍwxQjOkÃQl‾ ῑ a1

O\4vi
‾ῑa2

m



rCVD

Fig. 2-5UÍwVUQn.op4&l=q.
,ë|_`a¬vQ,r!Î,sL¤­
Fig. 2-1 Graphene. [2-1]tlQ500°Cq1000°C

Fig. 2-2 Structures of CNT (SWNT). [2-2]QRSTÐu_'Sf(wn_QCNTxryMWNTyNçÍwi`[yQ

iz

ZwinglUßvavwÞÍWQ{5Pà|   r  (chemical vapor

deposition)_?inxUVwÞ

:UOQNvw

UNµwi

Uyi`hÞxÍWQSWNTFig. 2-3 Schematic of arc discharge method. [2-3]Fig. 2-4 Schematic of laser assisted vapor deposition method. [2-3]Fig. 2-5 Schematic of chemical vapor deposition method. [2-3]ÞQj

2.3. SWNT÷^)!K-LM!NFig. 2-6QFig. 2-7USWNT
~OQD0.4nm
avwy
SWNT

O1µmÍWQ(ü4ÌOQ10mmU

TEMkH}lmZi

SWNTx+

rfOQ\4Ã_y100q200nmQþ

U4

ÖZwi
b

?

þQSWNTOLáÍwi

3àá¶OÓM3Uy3U

fg

÷

LM!N_`a-Q_V&xU4afgwi

yVÃð\gavwi@U`avÃijgl+QhOQ!£_E`avwi

L

j

pD_rf

+#

è{pD0.4nm[\Q3UOéO4vO

ÍwxQÓM3UO0.4nm q1.4nmUj

wSWNT.

y?_`a1.3q1.5g/cm3

lmZ[2-7]i4·Q+ôU·
/0O0.33nm_fgavwi

pDx9:`avw_?Ûgavw[2-6]iFig. 2-6 TEM images of SWNTs grown by CVD. [2-4]W6x&`Q900MPa[2-10]i`[`QSWNT

xtufgavw

36OÞ_

Z[4&UVw1\zµxµÃQ

Ò¶

ivw



ÍWQ_`hO4vi3

QROx_V&Zða
avwxQSWNT

QjgO"-Íw_SWNT[2-11]iFig. 2-8UQÓfgh¢£¤lmZi_UQR

OQ¥10K
Fig. 2-7 TEM image of SWNT bundle. [2-5].
m

l`
¡

¡¢

»Uaèlm`Qjg

¦§U¨v©Uª\ZwiFig. 2-8(a):OQ20K«4000W/m¬Kèlm`QþO¥_4WQ36

3UêW6O100GPaQ

400W/m¬KÍwi¡¢xª\Zw­OTPaQÓMyêW6O10GPaQ

OQQR:>l®xQ§O1TPa

Uzg&`h"-UVW¯°fgw

x\gavw[2-8, 11]iJIS

Uafgavw¾O1GPaêx&Zw[\ÍWQ±­W6QWµg`h|/¤|¾U

O2GPa

-UVw>

êW6lÓ`avwyyÍwxQSWNT?x_lÁw_QSWNT

1/7Íwn

OÇ3Íwin²{±­³ª\l*´Zwi`[`QþOQ"
µÀx&Ûa¥¡¢_4wiÞQSWNT¡¢OQ

Fig. 2-8(b)Um`hVUQ§U¨v»¯¬_`aQSWNTl5%g`h)!

O÷U&ZwiÓfghè¡¢"¥!x-fgQj

OQ1800q5900W/m¬K_¶xÍWQAB·$

9GQ90%yê

(a)
(b)

Fig. 2-8 Temperature dependence of thermal conductivity for copper (a) [2-12] and SWNT (b) [2-13].

M¤!·¸ÌOQþ6600W/m¬

K [2-11]_Q"¥~5ôÎ¹¥º+9
»

¡¢

¼

½

3

lm`avwi

3OQUVWvxÍ

SWNT

wi,!pL#,¾Ch=(n,n) OQR3ÍWQ¿c¾Ch=(n,0)
_34 Ch=(n,m)

OC¢í3ÍwiÀ_?ÛgQn-mx3¼

yOQ)¥¾_µOQR3ÍWQÀOC¢í3ÍwiC¢í3CNT!

q@£

µfOCNTCDUÁÌZw

n_y`avwi
hQ¡¢x¯°Zwn_4Ãfg
w.|/¢@X¡¢xQQR3SWNTÂÃ
MWNT

¶4_`a3UÄfga

Fig. 2-9 TEM images of MWNT. [2-14]

vwi
MWNT

êW 6OQ èÍ^ 11GPa q

2.4. MWNT]^)!K-LM!N

63GPaQO270GPaq930GPa

Fig. 2-9UMWNT

gavw[2-17]inü

TEMkH}lmZingOû

ÅÆavwCaped MWNT

Ç¾34kHÍwi/0O"¡$!|¾`[È[4vhcQ^.

É-¬O(ca{fv_ÄÊfgwiaQèb
èÍ^

xj

SWNT

ËÌ_`aO
3Î3lÏcavw_ÁaVvxQj¬ÍayèÍ^SWNT{f4É-

+UÛ

[4x\ÐÑ`avw_y?Ûgavw[2-15]i`[`QÉ_nÒQMWNTUzvaOQSWNT

&4UVw¶vlÓkµa

v4vi
L

pD_rf

Nfgavw_V&
20nmq100nm

MWNTCDUÍwxQj

aOÒÔÍwihQMWNT

pDO

­Uzv
rfOQ

þO3q5µmQèO1mmÖ`avwÌ
ytufgavw[2-16]i,|}X~OQSWMT_ÕU100lÖ÷UÖ`Q105 v

fÁ\gavwi
b

36

OSWNT__V&ÕÆ

Íwi
m

3

Fig. 2-10UQMWNT

MWNTO^./0O0.34nm_Ófgav
aQn

x\

¡¢

ÓÌlmZ¡¢ySWNT_ÕU

[2-18]iMWNT§Uzg&Zw×ßUÍwxQvU
4w_OhÃÇ4wipD14nm MWNT
O320Kè3000W/m¬Klm`Qj\ZwihMWNT +ª

QpD80nm

 O Õ   U a 1500W/m ¬ K Q p D 200nm  O
300W/m¬K_¡¢OµÃª\`avwijgO]^LM!N.É-¬¯°UÙwy_Øfgavw[2-18]i



3

Ù

MWNT

4

V4"-ÚÛOUVaµxÍwn_x`avw[2-19]inn_[\QR3ÂÃC¢í34MWNTxÓÜU¤
Zwn_xÛ[wi`[`QXhO+_`aMWNTlÝoQjOÒvhvC QR 3U 4 av w_ ?Û ga vw [2-20]
xQj3xU4avw_OÒ?Á4vi

_4wiFig. 3-1(c)OQFGEl5eV_ç`hoQY(_56U£¤`h<=èévlmZi<=Q·¸@~=!<=Qß·¸@~=!<=UVw>?JTEQJs QJES OQjg
êgJëfgwi[3-2]

J TE =

4πme
2
 φ 
kT ) exp − 
3 ( kT 
hngO8ìQRichardson-Dushmann

x<=fgwQjn

56_5U£¤`aQ<=xÛwiFig. 3-1(a)OQxÃQ[zQ56x»v
·¸@~=!<=(Exteneded Schottkey

Emission) _01gwiY(x»ÃQ5
56xÃ4w_QlÅÆncavw
5à/·qáâx»ÃQãÃ4whcQ~äxåµaQ<=OQFig. 3-

1(b)UmZVU4WQvÛæwQ5<=πqsin(πq )

(3-3)

nnQ

q=

<=l`Q

[\ÞU<=Q·¸@~=!<=Qß(3-2)

Ë2KO·¸@~=!;_0íi

J ES = J s

3.1. 5<=QRY(5[\ëÍwi e3 F / 4πε 0J s = J TE exp



kT



Fig. 2-10 Temperature dependence of thermal
conductivity for MWNT.

3.

(3-1)

h

π m

(4πε eF )

3 14

0

kT

`[`Qß·¸@~=!¾(3-4)
<=U·v

aQyîï@xWQhQ56yîïxw_Qj<=>?OJëfg

wi

J ES = J FNπρ
sin(πρ )(3-5)

Fig. 3-1 (a) Electron emission at high temperature and low applied field, (b) Electron emission at low
temperature and high applied field (field emission), (c) Emission regimes as a function oftemperature and field for an emitter with φ =5eV [3-1].

 J  1ln 2  ∝
F  FnnQË2KO·¸@~=!;ÍWQρ=

kT 2 t ( y0 ) 2 mφehF

x\gwi783456FOQÀÁ\gh(3-6)

JFN xQJUïðwFowler-Nordheim(3-5)ë

UVw

<=>?_4wiqáâô~.xånwxQn
gUVw<=>?OJëÀÁ\gwiÍw_ü`avi(3-10)ë[\yÛ[wVUQÀÁ\gh56µ4>?lV_Zw4\1QFGE_

4.
.



!l

±­x5à/·qáhQD(Ex, F)OQÍw

>OQ5<=Ux(caýó4Ù_4(3-7)

âU÷ð5PQ÷ðo.UñòZwóÍWQ
ôõ

!ExQ

Íw56FU·w~.áâÍwiÉQn(Ex)OQFermi-Dirac öAVWJëÀÁ\gwin( E x ) =åÙ`hy59:;

0

xF-N£@~_EfgQngxp¨lwi∞

j = e n( E x )D( E x , F )dE x
nnQn(Ex)OQEx_Ex+dEx

β l¬vaQ F = βEa _fE;lYûÎXû_`a£@~mZ4\1Qj

56xýþUÃ4w_5à/·hQRô

enhancement factor`hyFig. 3-1(b)Um`hUQY(5U·wXÞ∫

 5 6  (Ea = V/d) _  5 9 : ;   fieldgwi(3-11)ë

3.2. Fowler-Nordheimß(3-11)



Ì_`aQFig. 4-1Uþ5<=¶

·|/plmZiOQY(QY(ÂÃ¦|X.![\fgQY(l'ð_`avwiY(_Y(.

Ç¾34/0OÄµwVU

500µmQ20µmô4avwi¦|X.!'Oþ+300V
Íwi_34`aUOQ¦|X.!

mk B T   E x − E f  ln exp1  + 1
kT  
2π 2 h 3  (3-8)

 h Q D(Ex, F) O Q C ÷ Ç  Ì _ ` a Q WKB(Wentzel-Kramers-Brillouin )l¬vaQ

 8π (2 m)1 2  E x 3 2D( E x , F ) = exp −v( y )
3he  F


x4vxQnnOQ>ôoUY(U[w!plªZw

3_<=(5ôU·w{l

Zw

3

Y
af

gavwiY(OQ>Mo

_ë|<=¶lF`aQpD250µm](l^¬`QÕoUtl³avwihQ¦(3-9)|X.!yµ4!pU

Á\gwV

UQ¦4ÃQ¦s$@Xl^¬_Zn_xµwi`hxaQ56

`avwiMOèy44p>öôiÆh~.UVw<=>?

³avwi

OQïZwVUQCNT©

 8π 2 m φ 2 3
e3 F 2v ( y )
j=
exp
−
2
F
3he
8πht ( y )φ



( )

nnQv(y)_t(y)OQ y = e3 F
wNordheimEQ
J

12(3-10)

Ñ}¾lF`hø8UVWQ0|φ fg

ùú;ÍwxQ_V&Íwi(3-10)ë

`v

Q1

hcUOQCNT®

ÐÑQë|ç_ú
ë|e¥UVwCNT@A.Qj`aQ¥Îë

|UVwCNT®



@Llè{éUÁwòóxÍwiM`a
þM
4-2Uj

Ö'O2×10-10PaQ

7!|'¾O10-9Pa»cÍw(Fig.

íkHlmZ)i!OQ@>[\Q"óà£!A.!à£Q#E!ª50l/sec _ 300l/secA!ïà£Qj`
aQLAùN.ø!
·¸à£

Þ

fgavwihQ
v7!|'¾

@Q



ÐÑ

4ë|



lö3Uðwhc

UQ$ë|¢_ë|

Ω
33.3 KΩ

ï%A(RGA) l ì & ` a v
wif\UQè8 ÙlÕoU`'µw!+@XL#
!l

wn_

Q(

'¾§

Fig. 4-1 Experimental setup for CNT field emitter.

l)Q*+U¨o.l¶U,-µwVU`aÍwi

5.

 !" #$ %&+!,-./'( ) &*
ÖU

ýó4-./_ìí3ÞlQ@Q7zUï
0`aïðwiTable 5.1Uj-:'¾xv_([ÃFGEOx

wn_U4WQµ4>lUwn_O

µ4vihQjgêgK

OÉvU.

X`avwiÌÁ1Q53

_63

lÓZw

hc

CNT©U·vaQ>_r¸¹

g\



_clmZin&g[xZw_Q(é>?l

\g4vn_U4wiÌÁ1Q$@A!

F

GEl@1w2l`ayQ7!|'¾Îõ

ÓÜ£s|OQÌÁ1QÍw42l³ÛQ¶
2j

5Þ

4·QCNT©

l^¬Zw_1ó

6lÓµwi
ýó46_`a>_r¸¹ÍUQ»$@A|xÍwi»$@A|lÓZwhcUOQQR3lmZCNT

ÄNQ<=5P

Ð{QCNTY(»õ-4&x74Þ_4ÒihÒ`Q1á

RGA
TMP

CNT [ \
<=!ï8Î$@A|UEZwtu
OÍwxQ&ª«¬

Test Chamber©_`aX

CNT 9

á34$@A|OÒ:øÍWQnnOng?Â`4vi

Fig. 4-2 Overview of experimental setup for CNT field emitter.

Table 5-1 >_r¸¹ÖUýó4./_ìí3Þ

./

ìí3Þ

CNTU·w59:; $Q,|}X~Q8; (SW, MW) U·vaQVWvCNT
1 Ù
lcwi
l<=Zwi
CNT5U·vaÐ234 CNT5Uf\UÐI4l-Zwi
2 Ù59:;lcwi
3 $@A!íU>WQ?ú[z $@A!íU>wCNT ?l³i{456ï8lwiÎ£úÎë|l^vQCNTl @LZwi
ÎCNTroQ

A!`hSTl^i

Î@Al^¬`aï¯ZwQBl³i
4 $@A!

FGEl@1wiFGE»vlCNTUef(wQÍwvOQr!/¢Zwi
5 CNT[\à|® ¡¢lcQ CNTlà|U'ZwÜUQ¡¢_¡¢l
[zQCNT-à|9 ¿M! zl^¬ZwidlZwi
6 X!¾UVwCNT
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7 ¥| @A._Á¯ ÎVW»v7!|'¾_ô'¾l .Zi@Ll)wiÎÁ¯ë|l4vVUë|l§Zwi
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CNT[\\ gw5 <=>OQZUCNT@A.l@A.lDEZwi

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vCNTlÐ\`Qjn[\Z[4vQ<µ4vi`hxaQMNgR

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1áÒ<=`aQ¾

ÎA|/

$@A!ûü

:[\Q534$@A!_`aQMxµw[\ÍUQ$$xvn_VWQ

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CNT

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2 L å æ`h V UQCNT
aQj40_¶OwiNyO¤7xýó Q,|}X~
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 U ¯Æ

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

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a

<=ljµwVU`zzÍwi4·QC¢

QMNgÍ

í34CNT

U³ÛgwVUV` 100 ¼ yµÃ Qïð wV

4aµhxQÕÆNyjÔÕCNT^QpDQrfQ$Q)¥./¢xÚÛOQQR3lmZCNTUUQCNT±W¿M!d_<=fgh!ï8xXYéZw_vâãl

(a)

(b)





Fig. 5-1 SEM images of MWNTs (a) and SWNTs (b).
SWNTs: Courtesy of Dr. Kenji Hata, Research Center for Advanced
Carbon Materials, AIST.
iÆwQ)wòóxÍwi

ÙpD

59:;l&f(wn_

CNT

ÒUÅ

lz_vayQ8eQ4òåOj

Zg1Q_3UOûü{fÃQ,|}X~ÅÆhQ

µvQSWNTl^Á1vn_U4wi`[`QÓO[4\`yjO4v_vn_lþ
mZiFig. 5.1(a)(b)OQZ

pD20nm, µm

rflzMWNT_pD1nm, mm
zSWNT

²³Ì

CNT

rfl

<=¶lZw_QCNT±W_`aÔ4¶lmZMWNTx'[3Uv<=¶lm`hiÓÜQ\kHï[wVUQn

SWNTOQ+?xÍWUÃQPvZ]avaQ[zQ
CNTxrvhcQjü

x\4vijÒÍwi`[`Q59:;l&f(Q[zQj

59:äx]v&Q<=O

&Zwi`hxaQùNK-ù¥ú

4X|A!lCNT5Uef(QCNTûü
_Õ­[jghf´gviþ

`himä1500K

QZW_

3`albhi9GQá

10mA/cm    f g w c   5 O 0.7V/µm _
2

MWNT



¥CïU4WQd34lm`hi
5.2. CNT5 U·vaÐ2 3459: ;l&
CNTxvÃ\{fvpD_µ4,|}X~Íwi6¾4i

nÍwRuO4 l=d_`a^¬Zwn_
UVWQMWNT®
wiRuO2¬vQ®Q+lÝµQrÚÛ

x|/¤|kbU»ÃQlÐuUWKv<=äx\4vVUeÁwi^>SWNTynOQ2003PUnglhi/RuO2 OQiÍwUyEÛ\Éó

vSWNTl,Ã`aQ<=älÎZ

BCDlzÐ{òåljop (RuO2)Ó`hicQ$@A!l-`hoUQv[UyO^Á4v

Ð{]ÃQCNT5U-w_vÞO(caQ

SEM}Íwi~O$yvi`[`Qng\

ü

RuO2 ®OV3õKÍ®UOA_xÍwxQ

ÓMOQ®j

vAl7U

OoÍ¨¦ï%

p2@³ hiFig. 5-2(a)(b)URuO2 ® «
MWNTTEM}ljgêgmZiMWNTâ5U

ùNnm[\ nmaQjlÐuxqr e`av

DOMWNTù¥ú_xï[wiZða

1/10q1/15Íwn

RuO2 OMWNTÍ5UÍ

w_ç`aQTEM}VWj

5?lB=Z

w_4%_4WQXPSUVW`h_s`hihQFig. 5-3UmZVUQSEM_EDX(!ï¯¾X¨ï¦Qenergy-dispersive X-ray

spectroscopy)UVWnlÐuO/jopFig. 5-3 SEM image of one MWNT with RuO2
clusters and EDX spectra at two spots.
(a)l®`hCNT

Qng\[z6v<=xövhin

ä[\

n_[\QRuO2

x8`hÐ{òåOQï3UOQCNTVW
µ459:;lzçxvn_xï[wi¶UQCNT5UÐ{òål]Ã8
µw

OQn

V4Ð{ïX|A!

äÍwiÕ

²³xèQtufghingOQZnOãvlMWNTUQj

QN2 ë|wDQ

900°C&`QX|A!8l`aQFig. 5-5
UÍwVUQjy5UÐ{òål8`hÍw[5-1]i9GQ59:;x¼

1900U4avwiZnO(b)Fig. 5-2 TEM images of MWNT before impregnated with nano-sized RuO2 particles (a)and after the impregnation (b).

smäO2250K_v

OvxQÚÛOQRuO2UV`a107yÃQµ4>U4w_jï

¿

M!dxâãU4w_ÚÛgwihQTEM}[\ï[wVUQX|A!ù¥úxMWNT

[\fgavwn_x
WRuO2 _`aj¤l`hi`hxaQlÐuORuO2 ÍWQýþUØ
\4vX|A!_`aÐ{òålMWNT

5U8`avwn_x`hiFig. 5-4UQ
RuO2 l®`hCNT[\ûüÎt5[\
CNT5

FEM}xuZw

FEM}lmZiCNT

6v<=xeÁwi

eë|[\

pDÍWQ[zQj

fgQXPSUV

<=

Q

xþÍwi`[`QRuO2

5?x{fvQv59:;lhòålqrï¯f(hxv_v./UÁZw_nÒyÍwiÞQCNT5U¥|
x*U"Z[l-WQj@A.Q

ïlòå_`a59:;lcwÞyÍwxQ,},I

>lwhc

4vi

$@A!UO?yO

Fig. 5-4 The center FEM image showing strong electron emission from sub-nano sized RuO2 clusters at
a MWNT surface.
Fig. 5-6UQRuO2 ®2lz`hMWNT_
2

MWNT

I-V¶lmZi{<OF-N£

@~Íwi®2UVWQc5OC
ï@U4WQ3.5V/µm

>?O200¼_

4wn_xï[hihQ59:;O980[\3800Uxhi
Fig. 5-7OQj²³è?fgh®vwc5x0.85V/µm@xho¶lmZiÀ

I-V

tuÌUV`aQMWNTx[4W,vUyc5O¥ÕÆQ`a\gw>?y¼]vn_xï[wis5A/cm2 

>?èéU4w_QRuO2®2l`hMWNTOQïZw|}2
~UVWà|[\CNT¼CxÃfgavwUyEÛ\Q<=>xÔ

WQ<yU4w4&Q¶xgaÃwn_xï[hiFig. 5-8Uj
Zi¶

7ØÙlJ

U4
lm

VUÁavwi

Q>?õ-U4w_QRuO2±W[CNT
_

9

9GQj

ÚÛ
ï

µfxâãU4widÎRuO2ddxWQ

!pxRuO2 ¥y`ÃOjl-win¥x5

5

RuO2 l±

åÎj



|

ïÝ¥

9:`avwCNT@AZwhcQRuO2 òÍwCNTy¼CZwçx

Fig. 5-5 TEM image of (a) a bundle of CNTs withseveral ZnO particles attached to it after
the annealing process, (b) a large ZnO
particle annealed to the sidewall of thenanotube causing the deformation of thetube, and (c) a HRTEM image showing
the lattice fringes of the ZnO particle ofpolyhedral shape. [5-1]Íwi¼CZw_À59:äxËÛahQn

5<=lcQÕn_lWZi`[`QöjgyQV/µm
>?x56ZUA/cm

U\gw

2O¾xÍwiFig. 5-6 Effect of RuO2 impregnation on thefield emission characteristics.

Fig. 5-7 Low threshold field of emitter with
RuO2 impregnation [5-2].

OQp>öôo|ô4\110¼ÍWQ
!X>?

UO¯µw_Á\gwi
5.3. $ @A! íU >w{ Q[ zQ? ú4
56ï8=¢4CNTl9J`4x\Q,},I >x\gwVUZwUOQ$@
A!íU>WQ?ú[z{456ï8xòóÍwij hcUOQZUTable 5-1Um`hVUQ$@A!íU>wCNT ?l³òóxÍwi
Fig. 5-9(a)(b)OjgêgQpß`hMWNT_¹pß`h| f/¢¥X_y0
1gw MWNT SEMkHÍwi&\y{OÍWQ¶U (a)xUr`avwi`[`Qp3Uï[wVUQ(a) <=¶OQ(b)UV`aÃ4vingOWU
pß`hÙ
MWNT x  ' `  ] a v
aQµ459:;x\g4v[\Íwi\ (b) OQ^ghïÎüx?ÆUï¯`avwVUeÁwi
=¢4CNT$@A!l-ZwUOQµÃïaQ2z ÞxÍwi1zOà|
UCNTlp'ZwÞÍwiy1zOQ
b CNTl4V\[ Þà|U`a-ZwÞÍwi_3UOQ«~U
OCVDx¬v\gQrßyvxQ
v,|}X~lV_Zw_?yx
W]w×ßUÍw QCNT .êµxòó_4wiÞQ~ OQ«~ VU
.êµyÔçO4vxQà|® _ÕoU?Zwxjxvi



Fig. 5-8 Comparison between two emitters withand without RuO2 impregnation.

(a)

(b)

Fig. 5-9 SEM images of oriented MWNT (a) andrandomly oriented MWNT(b).

Fig. 5-10 Simulation of the equipotential lines of the electrostatic field for tubes of 1 µm height and2 nm radius, for distances between tubes of 4, 1, and 0.5 mm; along with the corresponding
changes of the field enhancement factor β and emitter density (b), and current density (c)as a function of the distance [5-3].
Fig. 5-10UÍwÖ÷4·$M¤!·¸OQ
p`avwf1µm CNTpD4nm
Q
2µm@Là|UÍg1Qè 59:;
_>?l\gw_v9Gx\gav
win n_[\yQFig. 5-9(a) $@A!
OQCNT .êµl`aQCNT?l@1w
òóxÍwn_xï[wiìí34? ÞOQÌÁ1Q£úÎë|UVwCNT  @LQCNTroU A!`hSTl^¬Q@Aï¯ BÍwii£úUVw
CNT .êµ ÌlFig. 5-11UmZi3×10-2Pail¢`Q5ï.Q600W £ú
CNTl`avwiFig. 5-11(a)[\(b)® Ï
4?xe\gwxQßkHï[wV
UCNT® _Z[ iye\gwin?UVWÕÆ5s100¼ >
&_4WQp>>600µAQ>?6A/cm2
x\gh_`avwiFig. 5-12OQCNTroU A!`hSTl^¬`hÌlmZi(a)OSTl5U(h r9GÍWQ(b)OQpD8µm x@L12.7µmafgh·
q+!|Xl^¬`aQSTãvl A!
`h9GÍwiCNT?OQ A!UVW107 á/mm2 [\1ª\`Q>?O10

Fig. 5-11 SEM and TEM images of CNTs. (a)SEM image of as-grown CNTs. (b)TEM image of as-grown CNTs. (c) and(d) SEM image of plasma-treated
CNTs The diameter of each CNT
covered dot is about 70 µm. (e) TEM
image of sandwich-grown CNTs. (f)and (g) TEM image of plasma-treated
CNTs [5-4].

âãyªfgw_Áavwi

5.4. $@A!
CNT

FGEl»@

FGEOs4.5eV_Ï`a»vO

4viVaQCNT$@A!
(a)

(b)

Fig. 5-12 An aligned array of carbon nanotubes
grown from a uniform catalyst (a),carbon nanotube array grown from apatterned catalyst (b). [5-5]¼_4WQ10V/µm1A/cm p>>?x\gavwi=¢4CNT$@A! Q
$@A! µfU£WQ\gw>?
xÇ4wiX456Ea lÕÆU`ayQ
$@A! :_U·vaQn ü
jG_y0ðw8#ÙxEÛaQX
459:;x[4WÇ4wO ÍwinälâãU`avwtuOÉ _nÒO4v
xQþ OÙ
{f4CNT$@A!x$@A! 5 ÐÑl4vV VÒïUCNTl`aQFEA (field emission array)l-`avwingUVW$@A! üj
GO4Ã4WQ CNTxûU¼C`a`2

1whcUQFGEFGEl@»vlCNTUeÎr!/¢Zw_vÞOQ`a¡`vdÊO4vxQ*Í_Ã³a4[hingOj]Ãxmäx»ÃQd'v,).QRUVwy

ÍWQ>?

_4w_dd`avhçxvi`[`Q
èQFig. 5-13UÍwVUQmä2900KQFG
E2.6eV

LaB6 l2nmv¢CNTU(htuxÍWQf´gvi1á

MWNT[\

5<=ÓMU·vaQLaB6 r!~ø`UV`Qc
5xsCï

0.9V/µmQè>_`a¼

70µAx\gavwihÒ`Qï÷ðU·
w20%y

>õxÍw_tufgavwin

gO 7!| '¾x ýþU kÃQ 10-5PaÍ w
Që|UVwLaB6


FGE

ïÝ´³[QexØÙ_ÚÛgwi

Fig. 5-13 (a) TEM images for LaB6 tip-modified MWCNT emitter; (b) high magnification image
for the emitter’s tip showing that most of LaB6 was deposited on the tip of the MWCNT
dark area; (c) EDX spectrum of the emitter’s tip. [5-6]5.5. CNT [\ £¤´Q9d QCNT ¼C

¿M!Fig. 5-14OQSià|Up'rf(hMWNTl

=¢CNT$@A![\,},I>

>x\gwVUZwUOQ$@A!
¥

CNTà|U`[Wfgav

wòóxÍwingUO2z­xÍwi1z^¬`QþxM`h

$@A!5kHÍwijgêg

2°

UQ100mA/cm  >?UÖ `hÒ2kHï[wVQ`Ã±²fgQCNTO³ÃQSià|y78

OQ?ú4CNTlà|UÓU'Zw

3U@m`hxe\gwingOQCNTn_UVWQCNT[\à|®

CUJåfgh<xØÙ_ÚÛgQCNT¼C

¡¢lcQ¼¿M!dlZ_Y([\

ë|<=Qj`aQ!pU

wn_xµw[\ÍwingxÓµ4

Vw0¥Qjv_CNT

9x¦Ã4WQCNT¼Cl§ÃiA._ë|<=Qf\4w¥Q<yLz

­OQCNTlà|UÓU'Zö_vk´µlW`h9GÍÒi[zQCNT-à|9

wn_UVWQ6¾4UåÙZwCNT¼

ClZwn_xfgw[\Íwi
5.3KïðhVUQCNT$@A!
UOQb-

CNTlà|UZwÞ

¼C

9

x¦vn_ÍwiFig. 5-15 (b)UQ2µm

Y(-

Y(./0U·vaQ(a)vhMWNTx130V
a¼C`h~UFe_NiÔÕ?ú4y
OQCNT[\dl<=µwi~£¤´Q9QCNT

@Q


¿M!

êµ«µ_v./l¬Ò_Zw_Q±_rÞQ9GQCNTçUsx=w_Á\gwi­UQCNTç:UÁw_à|UhSTxj
CNT_à|.
\gw

9¾l»@f(wn_yÁQ2<=Oçßµ4

VU<=`a%'UQ}nj]«kHlmZinSTxÍWQj

Qà|

ï

¦f_

ÚÛx.¶fgavwiÕ4ØÙÍwxQFig.
5-16 O QÕ Ær f

CNT jOQ$@A!x0.3µA

CD x3nmo>±²fga`

vQÞQCDx20nmU4w_¡¢xv
150µAzxQjg
lavwSi
aQCNTxj¥XL@£

>OCNTx@·U¸avh_vn_lm

`avwi
þ

®¯_4wi@7ØÙOQ\[UCNT_à|__à|UCNTlp'ZwÞÍwi«OQýþUXv©<=ªUånw|

yQbUO@nl^vÙ

CNTlà

Fig. 5-14 Optical microscope images and SEM images of MWNTs on a silicon substrate before
and after serious damages during the emission.

µm length and 5-nm radius with theFig. 5-15 (a) and (b) SEM micrograph of a nanotube of 0.66µµanode positioned at 2µm distance before (a) and after (b) the destruction of the tube.
[5-7]
+#

|Uï¯f(hWQSià|Up'rf(hCNT

SEMkH[\O÷l^¬`avhxQÆb[\>lfgavwxï[wiFig. 5-19U55

3U`

avhE;Q¹vÔÕnÝÏUºW»VÒi=¢CNT$@A!

OQÙOÆ¼ÍwxQ

CNTl`[WZw
Lz

$@A!UÍw10 q10 áy
5

íUj

8

CNT

jGl{U³µ>\(Q`[yQÈ

3U$@A!l-ZwòóxÍwiþOQCNT_`QÁ¯OQÁ¯xV3»y´³
Q¡¢Q¡¢

U½gwU4wTi­@Á¯CNT
Áhiþ

QRUÅ

`QQR

là|UZwÞlOn6'2lï[WKÃ|}~_0Vvwi|}~2UVWQ:

Table 5-153µwiÆb_63

5Þx1Ó}OQ100µm

Ti¾l^¬`



EDXï%9GlmZiTivt[\CNTtUß[aÃ

U6x`avw

fgQTiC^s~Aï¯`hMWNT_Ti¾}`h
I-V ¶  Í w i }  f gh MWNT

MWNT

OQ4V/µm

56100mA/cm2 x\gQhQÕÆ56VZw_Q200¼[\1¼>?

&xe=fgavwij}2UUÍwVUQÆ5è6

CNT©_`aQ

4V/µm 5620A/cm Q9.6V/µm330A/cm2
2



>?UÖZwU4hin$@A!

>O20mAviQn²5{lÀÁZw

wxQngxÓZg1Q

hcQ~|@ATiãvl-`

},I

:

V3»³ÁwhcQ}

à|y{U`ÎZÃQl

HIy¿`ÎZviFig. 5-18O}fgh
CNT_Tiv

55

SEMkHÍwi:Â

N-l³av

|ôoUO,¸¹OQJKUïðw¥

@A._Á¯@L4g1Q


$@A!l!X>xfgwi

CNT$@A!
|

5POs70µm>ÍW4x\Qp>w$¿_}

OQ1000°CQ

4ÀÁlýÅh9GQFig. 5-20

^vQFEA(field emission array)

QR_Ç4WQTil^¬`h}

xe=8lÄÛ(wiFig. 5-19OQ,

avhxQOQv±WÎv6à|55U·

avwiÀ

MWNTx}VUQCNT±W¿M!dUVwCNT

âãx
dQ9

¼CQj`

aQ5UVwCNT ¼CÏwiFig. 5-21OQ

µm, r=3 nm, (c)Fig. 5-16 I-E curves [(a) and (c)] of several test cycles just before failure: (a) L=1µµm, r=20 nm. Inset of (a) is the corresponding SEM image of the CNT emitter. (b)L=1µand (d) are the corresponding SEM images of the failure sites. [5-8]

Ti

CNT

CNT
CNT
Ti

Ti
400nm

200nm

2000nmFig. 5-17 SEM images of the interfaces between Ti film and CNTs after the rooting process.

C

Ti

Fig. 5-18 Line elemental analysis of Ti and C at theinterface between Ti film and CNTs with EDX.

Fig. 5-19 Comparison of MWNT rooted in Ti
film with MWNT dispersed by use of acetone.

103

2

Emission Current Density (A/cm )

102
101
100
10-1
10-2

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10-4
10-5
0

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4

6

8

10

µm)
Electric Field (V/µFig. 5-20 I-V characteristics of rooted MWNTs with Ti film and Ti particles.

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2./1

Fig. 5-21 Life time of rooted MWNTs andaceton-dispersed MWNTs.
Fig. 5-22 Endurance and stability test of rooted
MWNTs for one month.
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