超高真空中で試料表面のクリーニングを目的とした『アルゴンスパッタイオン銃』です

2kV スパッタイオン銃 IB201
2kV Backfill Ion Source and Control

ビームエネルギー… 0.5kV～2kV
作動距離25ｍｍの場合：2.5ｍｍＦＷＨＭ
作動距離50ｍｍの場合：3.5ｍｍＦＷＨＭ

ビーム直径 …

取り付けフランジ … ＩＣＦ70

Description

最大ターゲット電流 … 10μＡ at VB=2kV

UNISOKU IB201 sputter Ion Gun is the ideal solution for sputter cleaning of samples under UHV conditions. IB201 sputter Ion Gun consists of the Model 04-165 2kV Backﬁll Ion Source and the Model 32-165
Ion Source Control. These units are interchangeable with the PHI® 04-161 and 04-162 ion guns and thePHI® 20-045 control, respectively.
The Model 04-165 Backﬁll Ion Source generates an energetic inert gas ion beam for sputter-etchingsolid surfaces. The source requires a static pressure of 5×10-5 torr with an inert gas such as argon. Ions
are generated by electron impact within the ion sourceʼs dual filament ionization chamber and are thenfocused at the target with energies of up to 2kV. The impurity content of the ion beam is minimized byusing an off-axis filament geometry. A focusing lens permits high ion current density to be obtained fora given operating pressure and source-to-sample distance. A dual tungsten filament assembly permits
continued operation when the first filament opens. The expected lifetime of the filament assembly isseveral years under normal usage at the recommended operating conditions. The filament assembly iseasily replaced in the field.
The Model 32-165 2kV Ion Source Control provides all the necessary voltages and currents required tooperate the Model 04-165 2kV Backfill Ion Source. The beam voltage may be activated manually,remotely, or with the built-in timer. Additionally, the anode (ion) and filament currents, as well as thebeam and focus voltages, may be externally monitored to ensure accurate reproduction of sputtering
conditions.

Advantages
Unique 04-165 Features
Fits on standard 2.75” ﬂange(1.35” ID tude; 1.5” OD)
Designed for easy maintenance

Unique 32-165 Features
Built-in timer for sputtering
Hour meter to track ﬁlament lifetime

04-165 Backfill Ion Source and 32-165 Ion Source Control
04-165 ion source specifications
Source TypeHot filament electron impact(Dual filament, backfill type)

Beam Energy

0.5 to 2kV

Beam Diameterat 25mm working distanceat 50mm working disatance

Maximun Total Target Current
Current Density

2.5 mm FWHM (at target)
3.5 mm FWHM (at target)
10µA at VB = 2 kV

at 25mm working distance

200µA/cm2 when VB = 2 kV,Emission Current = 30 mA

at 50mm working distance

100µA/cm2 when VB = 2 kV,Emission Current = 30 mA

Mounting

Standard 70 mm (2.75”) CF bored flamge OD,approx. 34.3 mm (1.35”) ID minimum tube required

Working Distance

Typically 25-50 mm from end-of-optics to target

Source Gases

Typically Argon, but can also use He, Ne, Kr & Xe

Bake-Out Temperature

200℃ Maximum

32-165 ion source control specifications
Input Power90-264 VAC @ 47-63 Hz, single phase

Beam Supply Voltage

500 to 2000 V in 500 V increments

Controls

Manual, Timer, Remote (TTL high → on)
4-position switch
5-turn potentiometer5-turn potentiometer
1-turn potentiometer (0-60 min.)Beam Control
Beam Voltage
Focus Voltage
Filament Current
Timer

Front Panel Monitors

0 to 2 V corrensponds ti 0 to 2 kV
0 to 2 V corresponds to 0 to 2 kV (referenced to VB)
0 to 2.5 V corresponds to 0 to 2.5 A
0 to 10mV corrensponds to 0 to 10µA

BeamFocus
Filament
Anode Current

Cooling

Convection

Dimentions

19” rack mount x 14” deep x 3” high株式会社 ユニソク
E-mail: info@unisoku.co.jp

Web site: http://www.unisoku.co.jp/

本社 ・ 研究所 〒573-0131 大阪府枚方市春日野 2-4-3 TEL 072(858)6456 FAX 072(859)5655