COMMISSION C : Radio Signals and Systems
Edited by Kenji Itoh
C1. Wireless Power Transmission
Wireless power transmission (WPT) via microwave has long history especially inJapan. In 80’s, point-to-point WPT via microwave experiments were carried out inJapan. In 2000’s, new WPT applications were proposed in Japan, for example,
Ubiquitous Power Source (UPS), wireless charging for electric vehicles, wirelessbuildings, and etc.. After proposal of resonant coupling power transmission by MIT in
U.S. in 2006, various WPT systems which include the WPT via microwave andresonant coupling power transmission are studied in Japan in recent three years.
Kyoto University’s group carried out some WPT experiments via microwave. They
carried out the field experiment of the UPS for emergency in 2009, in which themicrowave power was transmitted from airship above 50m and the mobile phones werecharged only with microwave power from the airship[Shinohara, 2010].
There are some kinds of the WPT via microwave researches in Japan. New rectenna
for weak power receiving and rectifying was developed in Okayama
University[Hiramatsu, 2009]. They also proposed and developed ultrasonic WPTsystem[Shigeta, 2009]. Tokyo University’s group carried out a micro aerial vehicle
flight experiment whose power was transmitted wirelessly from phased array on the
ground[Oda, 2010]. The same group started researches of mid range WPT with resonant
coupling technology[Koizumi, 2010].
We can transmit the wireless power via microwave, however, present radio wave
regulation does not allow the WPT as commercial use. On the contrary, we can use theresonant coupling because there is no radiation from resonators. The efficiency ofresonant coupling is higher than that of microwave power transmission. Therefore, it iseasy to make products of WPT. There are many researches and commercial products inJapan in recent three years.
・ New design theory based on BPF theory is formulated by Ryukoku University’s
research group.
・ Tokyo University’s group actively carry out some experiments of the resonant
coupling WPT application for an electric vehicle[Imura, 2010].
・ Famous Japanese companies, for example, Panasonic, Sony, Toshiba, Toyota,
Nagano Nihon Musen, etc., made new resonant coupling WPT applications public.
Based on the Japanese WPT activities, WPT working group was established in
Broadband Wireless Forum (BWF) in 2009. Radio regulations, consideration ofelectromagnetic limits for human body, and other equipments are discussed in theworking group of BWF[Shoki, 2010].
(N. Shinohara)
C2. Satellite Communication Systems

Research and development projects in the field of satellite communication systems,
such as wideband internetworking satellite communication, mobile satellite
communication, integrated mobile communication and improvement of ground station
technology has been executed in Japan for these three years.
(1) Wideband internetworking satellite communication (WINDS)
Wideband Internetworking engineering test and Demonstration Satellite (WINDS) is anexperimental satellite aiming at research and development of broadband satellite
communications system which takes part in construction of worldwide broadband
networks and it was launched into geostationary orbit at 23, Feb., 2008.
After launching the satellite, fundamental and application experiment is now
performing. In these experiments, health check of onboard Ka-Band Active Phased
Array Antenna (APAA) was confirmed in orbit, and shown a good result Moreover,data communication of 1244Mbit/s (world record) was succeeded combining two
622Mbit/s waves with the bent-pipe mode using Satellite-Switched Time Division
Multiple Access (SS-TDMA) system.
(2) Mobile satellite communication(ETS-VIII)The Engineering Test Satellite VIII (ETS-VIII, Japanese name “KIKU-8”) was
developed by the JAXA, NICT, and Nippon Telegraph and Telephone Corporation(NTT) and was launched into geostationary orbit at 146 degrees east longitude on 18
Dec. 2006. The aim of this project is to develop the following new technologies; inorbit experiments such as Large-scale satellite-mounted Deployable Reflector(LDR)(19m x 17m), mobile satellite communications using small ground stations such as
handheld terminals ( about 300g ).
Concerning the electrical characteristics of the LDR and beam forming network wasevaluated [Suzuki, 2008], and the location of beam spot was changed around 0.15
degree by the thermal distortion of the large reflector [Satoh,, 2008]. Experimental
result of portable terminal was reported and shows good characteristics such as thedegradation of BER around 1dB compared to the identical in the case of without error
correction [Yamamoto, 2008].
(3)Satellite terrestrial integrated mobile communication system
For the purpose of communication method at the disaster and digital divide
measures in the local area, satellite/terrestrial integrated mobile communication
system (STICS) is now under researching. In this system, dual mode handheld
terminal with satellite and terrestrial communication function is used. In the satellite,
30m class reflector antenna is assumed to enable satellite communication withhandheld terminal. The frequency is shared with satellite band and terrestrial band.
Now, several frequency shearling method was proposed [Minowa, 2008] [Umehira, etal., 2009] and measurement experiment of interference wave such as terrestrial
communication was carried out [Tsuji, 2009].
(4) Ground station technologies
For the sensor network via a communication satellite system was proposed
which is called “Hyper Multi-point SATCOM System”, it can treat wide range datafrom several ten byte to several megabyte maximizing frequency efficiency.

Variable polarization frequency division multiplexing (VPFDM) was proposed
for the purpose of accurate polarization tracking using electrical steering antennasuch as mechanical steered polarization tracking antenna. Because polarization
multiplexing, technical standard of cross polarization level in Very Small Aperture
Terminal (VSAT) was defined to be 27dB, and it is difficult to establish such value
in the electrical steered antenna. Validity of this system is confirmed by theexperiment.
The helicopter-satellite communication system (HELISAT) was proposed anddeveloped. In the helicopter, satellite communication was difficult by periodical
interception by helicopter rotor blade. In this system spatial communication method
was developed that synchronize rotating blade. Moving picture transmission of
1.5Mbit/s was succeeded using this system [Fujino, 2008].
(Y.Fujino)
C3.Microwave Active Circuit
The frequency bands allocated to mobile communications have been increasing withthe growing demand for high-speed and high-capacity data transmission services. In
particular, future mobile terminals will be anticipated to function seamlessly in various
mobile communication systems that have inherent specifications such as the operating
bands, the bandwidths, or the modulation/demodulation schemes. In this sense, thefollowing two topics are one of the most significant issues in recent microwave active
circuits: One is to provide multi-band operation, and the other is to achieve highlyefficient operation.
There have been reports on the architecture to provide multi-band/multi-mode
operation for mobile terminals [Shimozawa, 2009], [Okazaki, 2010], which describe aquadrature mixer/modulator and multimode transceiver IC having a low spurious local
oscillator configuration; and a reconfigurable architecture for configuring low-noise
amplifier that incorporates integrated matching networks with MEMS switches. As apractical example of multi-band devices for mobile terminals, there have been proposals
on a highly efficient multi-band power amplifier with a reconfigurable configuration
comprising band-switchable matching networks and a biasing network [Fukuda 2010];
and a multi-band operation power amplifier integrated into a LTCC substrate [Furuta,
2010].
Aggressive R&D activities have given remarkable outcomes with regard to thehighly-efficient operation. Typical topics during this period are divided into two
regions: nonlinear distortion compensation techniques and harmonic tuning. With
regard to the nonlinear distortion compensation techniques, a 3.5-GHz feed-forward
power amplifier for mobile base stations has been proposed to demonstrate anexperimental investigation on the wideband intermodulation distortion compensation
characteristics [Suzuki, 2010]. In contrast to the feed-forward configuration, the digital
predistortion (DPD) has also attracted much attention from the standpoint of the affinity
with the digital signal processing in the modulation/demodulation circuits of the basestations. A fast calculation scheme has been presented for the coefficient values of afrequency characteristic compensator in the DPDL based on a quadratic function using
the relationship between the coefficient values of the frequency characteristic

compensator and the intermodulation distortion components [Ohkawara, 2009]. With
regard to the harmonic tuning, highly-efficient power amplifiers have been
demonstrated such as C-band GaN HEMT high power amplifier with a new circuit
topology for simultaneous high efficiency matching at both fundamental and 2ndharmonic frequencies, yielding the drain efficiency of over 57% with 100W output
power [Otsuka 2008]; a new feed-forward amplifier employing a harmonic reaction
amplifier as the main amplifier, yielding the efficiency of 19.3% with 20W output
power [Suzuki, 2009]; and 2-GHz band GaN HEMT, an inverse class-F amplifier,yielding the power added efficiency of over 70% [Yoshida, 2010].
Besides the above mentioned areas, high-performance active devices have been
proposed to open up entirely-new areas of microwave applications such as a highintegrated SiGe-MMIC transceiver for 5.8GHz dedicated short range communications
terminals [Shinjo, 2008], a Ka-band high-power protection switch utilizing new
open/short-stub selectable circuit [Hangai, 2009], and a push-push VCO using branchline hybrid phase shifters [Kawasaki, 2010].
(S. Narahashi)
C4. Wireless Interconnection for Microelectronics
Though signal speed and integration level continue to increase in LSI technology,interconnections from/to the LSIs become serious problems. Conventional wire bonding
has speed limit and signal degradation due to inductance of metal wires. Co-integrationof optical devices has been long history of R&D [Haurylau 2006], but material level
heterogeneous integration is still far from practical uses.
Recent approaches are wireless interconnection between IC chips. There are several
approaches.
One is by radio wave propagation with conventional antennas [Sasaki, 2009]. With
on-chip dipole antennas, which length is 6mm and the distance is 5mm, S21 is -10dB onhigh resistivity substrate [Kikkawa, 2010] . The transmission efficiency is so low thatthe system requires amplification of the received signal. However, the signals aretransmitted to almost all directions, the system will be convenient for one to multi-port
applications such as system clock delivery in digital circuits. However, the size of theantenna will be a problem.
Another approach is the use of inductive coupling with coils [Miura, 2005]. On-chipcoils are placed on two wafers, and they are coupled with magnetic flux. Since the flux
extends towards both upper and lower directions of the coil, the signal can be delivered
through several wafers. Thus, they are appropriate for stacked multi-chip systems. The
confinement of the energy is a problem in regard to the transmission efficiency.
Therefore, the amplification at receiving point is also required. The size of the coils are
100 - 200mm square and the distances between the coils are limited to be 20-120mm.
Due to this short transmission distance, the wafers are placed face to face or thinned
down to 20-50mm. Using 65nm CMOS technology, they have shown 1.1Gbps datatransmission with 0.55V power supply.

The other approach is capacitive coupling [Fazzi, 2007]. To reduce the capacitor area,
the distance between the electrodes should be as short as possible. Their target distanceis 0.4mm for 8mm square electrodes. Since the technology requires face to face wafer
stacks and precise chip-alignment, it will be used in limited areas such as 3-dimensional
wafer stacks.
The final approach is resonator couplings. Recently, wireless power transmission
between two LC resonators becomes popular in power electronics [Karalis, 2008].
Experiments are carried out with 10MHz signal (l=30 m) where the coil diameter isabout 30 cm and the transmission distance is around 1 m. If the frequency is increased
up to 60GHz, the resonator can be formed by small ring-type resonator (open-ringresonator) with the diameter of 240 mm on silicon or sapphire wafers. According tosimulations, radiation loss is estimated to be less than 1dB even through 200 mm wafers
with a 3dB bandwidth of 5GHz [Ohno, 2009]. Experiments at 15GHz signals showed
S21 of -1.7dB [Okuyama, 2009]. Due to this high transmission efficiency, the structureneeds no amplification. Therefore, it will be used for assembling in microwave systems
including passive components like antenna. Due to the use of resonance, the structure istolerant to misalignment [Abe, 2010-1], but the loss due to the finite conductivity ofsilicon wafers will be a problem [Abe, 2010-2]. Then, high resistivity silicon wafer will
be needed. To solve this problem, meta- material concepts are proposed [Takahagi,
2010].
(Y.Ohno)C5. Millimeter-wave and terahertz CMOS circuits
Recently, millimeter-wave and terahertz CMOS circuits are actively studied aiming
for ultrahigh-speed wireless communication and noninvasive imaging. Although GaAs
and InP circuits were conventionally used for millimeter-wave bands, CMOS circuits
can operate in millimeter-wave region owing to device miniaturization using standard
process. However, although standard CMOS process only offers process design kits
(PDK) for relatively-low radio frequency (RF) including device models and layouts,
they apply only below 30GHz. As a result, even though current advanced CMOS
process has potentials to operate millimeter-wave and terahertz frequencies, thededicated PDK for them has to be established, first. In 2008, Manzawa, et al, proposed
bond-based design for millimeter-wave CMOS layout in order to overcome incomplete
back annotation in millimeter-wave region [Manzawa, 2008], and proposed highattenuation power line for millimeter-wave decoupling [Manzawa, 2009]. Owing tothese two techniques, reproducible CMOS design can be realized even in millimeterwave bands. For low-power millimeter-wave wireless communication, Oncu et al.
proposed 60GHz pulse transmitter[Oncu, 2009-1], pulse receiver [Oncu, 2009-2] andwireless high-definition multimedia interface (HDMI) [Oncu, 2010]. Utilizing thesetechnique, low-power communication technique was demonstrated even in millimeterwave bands. Recently, terahertz CMOS circuits which operate over 100GHz haveattracted attentions. Fujimoto et al. proposed device modeling technique applicable toterahertz region [Fujimoto, 2010-1] and 120GHz transceiver chip sets [Fujimoto, 2010-

2] and demonstrated terahertz communication with 9Gbps data rate and bit-error rates
of below 10-9.
From now on, aiming at higher-speed communication and new sensing, CMOS circuits
operating at higher frequency will be actively studied and will open up new applications.
(M. Fujishima)
C6.Silicon based RF integrated circuits
In this period, many RF integrated circuits which realized by compound
semiconductor have been superseded with scaled CMOS and Si-Ge BiCMOS. The cutoff frequency of Si-Ge bipolar transistor was already achieved 400 GHz and that ofscaled CMOS was 250-300 GHz in 40-32 nm process design rule. Especially, many RF
integrated circuits designers and researchers focused on cellular-phone, and millimeterwave applications.
Regarding in the cellular-phone, almost all RF integrated circuits were realized bysilicon based integrated circuits due to Japanese WCDMA market extension. A quadband WCDMA transceiver, which including low-noise amplifiers and direct conversion
receiver and transmitter, was reported using 180 nm BiCMOS process [Kamizuma,
2008], was achieved 3 % EVM and -46 dBc ACLR. On the other hand, using 130 nm
CMOS process, eight-band WCDMA/GSM transceiver, which including low-noise
amplifiers and direct conversion receiver and transmitter, was reported [Yoshida, 2008].
The achieved performances of this transceiver were 2.4 % EVM and -49.7 dBc ACLR.
WiMAX is one of the candidates of next generation metropolitan area network
application. The fully integrated WiMAX transceiver which consist of two receivers
and one transmitter was also reported using 65 nm CMOS process [Deguchi, 2010], wasreally possible to adopt product.
Regarding in the millimeter-wave applications, 77 GHz automotive radar transceiver
was realized by fully integrated circuits using CMOS and beyond 100 GHz RF circuits
blocks were reported. Automotive 77 GHz FM-CW transceivers were reported using 90
nm CMOS with 920 mW power dissipation [Kawano, 2009] and 520 mW power
dissipation [Mitomo 2009]. The latter one was reported to possible to measure thedistance approximately 8 m with 6 cm error. To realize of the demand of high data rate
communication, higher carrier frequency is necessary. A 120 GHz ASK transmitter andreceiver chipset with 9 Gbps communication rate was reported [Fujimoto, 2010] using
65 nm CMOS under 100 mW power dissipation. Also, many research reports ofmillimeter-wave circuit building blocks were available such as wide-tuning range
millimeter-wave oscillator [Nakamura, 2009].
(N.Itoh)
C7. Microwave Frequency Conversion and Generation（１） Land mobile communication
In the RF region, evolution of the cell-phone system accelerated the RF systemarchitecture including the frequency conversion and generation circuits, in past. For thethird generation system based on CDMA, direct conversion transceivers and fractional-

PLLs were technically improved under strong business competitions. Thus we could see
important improvements on above topics in mid-2000s. However we are facing
technical saturations on this area, although there are continuous research activities formass-RF-IC markets.
In the late-2010, the new cell-phone system named "LTE(Long Term Evolution)" wasstarted in Japan for 37.5Mbps down-link. To achieve high speed transmission, highresolution modulation like 64QAM is employed in LTE. So high accurate modulation
mixer technique is key to realize the system. Also the digital pre-distortion system intransmitters need the same requirement on modulation HWs. Estimation and correction
methodology by digital signal processing are proposed, and validation results aredemonstrated for the practical LTE systems [Yamaoka, 2010] .
For future wireless systems with high efficient frequency-use efficiency, cognitive radio
systems are studied continuously. For the systems, RF-ICs are required to achieveultra-wideband characteristics for frequency flexibility in radio communications. Also
extreme dc current compensation is required for future hand-terminal utilizations[Shinjo, 2009], [Taniguchi, 2009].
(2) Millimeter wave system
Based on the rapid evolution of the silicon devices like deep sub-micron CMOS or SiGe
BJT, research works for millimeter wave systems are very active. Also compounddevices like InP HEMT or GaN HEMT are considered especially for power utilizations
in millimeter wave. In parallel with above evolutions of semiconductor devices, HDTV
systems are wider accepted in Japanese homes and wireless transmission requirements
are becoming strong for Gbps data used in high vision TVs [Kukutsu, 2010].
Distribution of high definition TV programs is planned with future 10G-Ethernet(10GE) on passive optical network. For the connection to above 10GE, 10Gbit/s
wireless link is studied at 120GHz band. For the utilization, 120GHz band digitalmodulator and demodulator were developed with 0.1 micron InP HEMT[Takahashi,
2009], [Takahashi, 2010]
In addition to 120GHz band utilization mentioned above, 77GHz band utilization forhigh speed communications and short range radar are considered. Low phase noise
oscillator techniques are very important to achieve high accurate digital modulation as
64QAM or high resolution radar equipments. For improvement of phase noise,harmonic oscillation and high Q resonation inside oscillator were proposed, anddeveloped 77GHz planer oscillators achieved phase noise around -110dBc/Hz at 1MHz
offset is achieved without large sized bulky resonators [Watanabe, 2009], [Mizutani,2010].
(3) Circuit theory
Phase noise of oscillators has been represented by well-known Leeson’s formula withoscillators’ Q. However, we had no clear definition of oscillators’ Q. In [Ohira, 2007],
theoretical formulas of oscillators’ Q was defined under the circuit theory. In addition
to the above fundamental work, formulations of oscillators’ Q were done for practicaloscillator configurations[Ohira, 2008],[Morimasa, 2010]. Also the paper [Morimasa,
2010] theoretically clarified the relationship between resonator's Q and oscillator's Q at

first.
Diode balanced mixers are very classical circuits from 1920s. However there are no
formulas that indicates output power of the mixers in closed forms. Output power of thebalanced diode mixers and even harmonic mixers are formulated with the switch modelfor diodes. The derived formulas represented output power of the mixers [Itoh, 2009].
(K. Itoh)

References
Abe .Mami, Yuka Okuyama, Jin-ping Ao, Yasuo Ohno [2010-1], Misalignment effects
in inter-chip wireless connection with open-ring resonators, 2010 Asia-PacificMicrowave Conference Proceedings, (APMC 2010), 908 - 911, Yokohama, Japan
Abe .M, T. Amou, K. Kuramoto, J.-P. Ao, Y. Ohno [2010-2], Effects of Substrate
Conductivity on Open-Ring Resonator Wireless Interconnection, 2010 Asia-PacificRadio Science Conference, (AP-RASC'10), D1-6, Toyama, Japan
Deguchi .J, D. Miyashita, Y. Ogasawara, G. Takemura, M. Iwanaga, K. Sami, R. Ito, J.
Wadatsumi, Y. Tsuda, S. Oda, S. Kawaguchi, N. Itoh, M. Hamada [2010], "A Fully
Integrated 2×1 Dual-Band Direct-Conversion Transceiver with Dual-Mode Fractional
Divider and Noise-Shaping TIA for Mobile WiMAX SoC in 65nm CMOS", Digest of2010 International Solid-State Circuits Conference, pp.456-457.
Fazzi .A, L. Magagni, M. Mirandola, B. Charlet, L. Di Cioccio, E. Jung, R. Canegallo,
R. Guerrieri [2007], 3-D Capacitive Interconnections for Wafer-Level and Die-Level
Assembly, IEEE Journal of Solid-State Circuits, vol. 42, 2270 - 2282,
Fujimoto .R, M. Motoyoshi, U. Yodprasit, K. Takano, and M. Fujishima [2010], "A
120-GHz Transmitter and Receiver Chipset with 9-Gbps Data Rate using 65-nm CMOS
Technology", Proc. of 2009 Asian Solid-State Circuits Conference. pp. 142-145.
Fujimoto .R, K. Takano , M. Motoyoshi , U. Yodprasit and M. FUJISHIMA [2010-1]“Device-modeling techniques for high-frequency circuits operated at over 100 GHz,",IEICE Integrated Circuits and Devices in Vietnam (ICDV) .
Fujimoto .R, M. Motoyoshi, U. Yodprasit, K. Takano and M. Fujishima [2010-2] “A
120-GHz transmitter and receiver chipset with 9-Gbps data rate using 65-nm CMOS
technology,” 2010 IEEE Asian Solid State Circuits Conference (A-SSCC).
Fujino .Y, M. Satoh., S. Nagai, S. Taira, Y. Ozaki, E. Watanabe, M. Sawa, Y. Tanaka, T.
Kusuda [2008], “Development of Helicopter Satellite Communication System for theDisaster Information Transmission”, IEICE Trans. on Comm., Vol. J91-B, No.12,
pp.1611-1619.

Fukuda A., H. Okazaki , S. Narahashi. [2010] Highly Efficient Multi-band Power
Amplifier Employing Reconfigurable Matching and Biasing Networks, IEICE
Transactions on Electronics, Vol.E93-C, No.7, 2010.
Furuta T., A. Fukuda , K. Kawai , H. Okazaki , and S. Narahashi [2010], Multi-band
Power Amplifier on an LTCC Substrate, IEEE Topical Symposium on Power
Amplifiers for Wireless Communications Technical Digest, 2010.
Hangai M., K. Nakahara , M. Yamaguchi , and M. Hieda [2009], A Ka-band HighPower Protection Switch with Open/Short-Stub Selectable Circuits, 2009 IEEE/MTT-S
International Microwave Symposium Digest, pp. 1513-1516.
Haurylau .M, Hui Chen; Jidong Zhang, Guoqing Chen, N. A. Nelson, D. H. Albonesi, E.
G. Friedman, P.M. Fauchet [2006], On-Chip Optical Interconnect Roadmap: Challenges
and Critical Directions, IEEE Journal of Selected Topics in Quantum Electronics, vol.
12, Part: 2, 1699 - 1705,
Hiramatsu, Y., T. Yamamoto, K. Fujimori, M. Sanagi, and S. Nogi [2009], "TheDesign of mW-Class Compact Size Rectenna using Sharp Directional Antenna," Proc.
of European Microwave Week 2009, Oct. 2009, pp.1243-1246
Imura, T., T. Uchida and Y. Hori [2010], “Flexibility of Contactless Power Transfer
using Magnetic Resonance Coupling to Air Gap and Misalignment for EV”, WorldElectric Vehicle Association Journal, Vol.3, 2010
Itoh, K., et.al., [2008], "Fundamental Limitations on Output Power of the Balanced
Diode Mixer in Modulator Operation", IEICE technical report, MW2009-12. (InJapanese)
Kamizuma .H, T. Yamawaki, Y. Akamine, K. Maeda, S. Tanaka and K. Hikasa [2008],"A Quad Band WCDMA Transceiver with Fractional local divider", Digest of 2008
Symposium on VLSI Circuits, pp.96-97.
Karalis .A, J. D. Joannopoulos, M. Soljacic [2008], Efficient wireless non-radiative
mid-range energy transfer, Annals of Physics, vol.323, 34-48,
Kawano .Y, T. Suzuki, M. Sato, T. Hirose, K. Joshin [2009], "A 77GHz Transceiver in
90nm CMOS", Digest of 2009 International Solid-State Circuits Conference, pp.310311.
Kikkawa .T, K. Kimoto, S. Kubota [2010], Analysis of silicon on-chip integrated
antennas for intra- and inter-chip wireless interconnects, Solid-State Device Research
Conference, (ESSDERC 2010), 114 - 117,
Koizumi, M., K. Komurasaki, T. Komaru, Y. Mizuno, T. Shibata, and K. Kano [2010],“Mid-range Wireless Power Transmission in Space”, Proc. of 8th Annual International
Energy Conversion Engineering Conference, July, 2010, AIAA-2010-6918

Kukutsu, N., et.al., [2010], Toward practical applications over 100 GHz, 2010
IEEE/MTT-S International Microwave Symposium Digest, pp.1134-1137.
Manzawa .Y, Y. Goto, and M. Fujishima [2008], "Bond-Based Design for MillimeterWave CMOS Circuits Optimization," Asia- Pacific Microwave Conference.
Manzawa .Y, M. Sasaki and M. Fujishima [2009] ”High-Attenuation Power Line for
Wideband ” IEICE TRANS.ELECTRON., Vol.E92-C, No.6, pp.792-797.
Minowa, T. M. Tanaka, N. Hamamoto, Y. Fujino, N. Nisihaga, R. Miura, K. Suzuki[2008], “Satellite/Terrestrial Integrated Mobile Communication System for Nation’s
Security and Safety”, IEICE Trans. on Comm., Vol. J91-B, No.12, pp.1629-1640.
Mitomo .T, N. Ono, H. Hoshino, Y. Yoshihara, O. Watanabe, and I. Seto [2009], "A 77
GHz 90 nm CMOS Transceiver for FMCW Radar Applications", Digest of 2009
Symposium on VLSI Circuits, pp.246-247.
Miura .N, D. Mizoguchi, T. Sakurai, T. Kuroda [2005], Analysis and design of
inductive coupling and transceiver circuit for inductive inter-chip wireless superconnect,
IEEE Journal of Solid-State Circuits, vol 40, 829 - 837,
Mizutani, H., et.al. [2010], "A Millimeter-Wave Reflection-Type Dual-Frequency VCO
MMIC with a Coupled Line", 2010 IEEE/MTT-S International Microwave Symposium
Digest, pp.288-291.
Morimasa,T., et.al., [2010], "Analysis and Evaluation of Oscillator Q for the FET
Oscillators with a Coaxial Resonator", IEICE technical report, MW2010-128. (InJapanese)
Nakamura .T, T. Masuda, K. Washio, H. Kondoh [2009], "A 59 GHz Push-Push VCOwith 13.9 GHz Tuning Range Using Loop-Ground Transmission Line for a Full-Band
60 GHz Transceiver", Digest of 2009 International Solid-State Circuits Conference,
pp.496-497.
Oda, A., H. Sawahara, M. Ishiba, K. Komurasaki, and Y. Arakawa [2010], “Integrationof MAV Wireless Power Transmission Systems”, Proc. of 8th Annual International
Energy Conversion Engineering Conference, July, 2010, AIAA-2010-6627
Ohira, T., K. Araki,. [2007], "Active Q-Factor and Equilibrium Stability Formulationfor Sinusoidal Oscillators", IEEE Transactions on Circuits and Systems II, Vol. 54,
No.9, pp.810-814.
Ohira, T. et.al., [2008], "Pseudolinear Circuit Theory for Sinusoidal Oscillator
Performance Maximization", , IEICE TRANSACTIONS on Electronics,vol.E91C,No.11, pp.1726-1737.

Ohkawara J., Y. Suzuki , and S. Narahashi [2009], Fast Calculation Scheme forFrequency Characteristic Compensator of Digital Predistortion Linearizer, Proceedingsof IEEE Vehicular Technology Conference (VTC Spring 2009), pp. 1-5.
Ohno .Y, I. Awai [2009], Wireless Interconnection by Electromagnetic Coupling ofOpen-Ring Resonators and Its Application to System, 2009 International Conference on
Solid State Devices and Materials, (SSDM 2009), D-2-1, Sendai, Japan
Okuyama .Yuka, Jin-ping Ao, Ikuo Awai, Yasuo Ohno [2009], Wireless Inter-Chip
Signal Transmission by Electromagnetic Coupling of Open-Ring Resonators, Japanese
Journal of Applied Physics, vol.48, 04C025,
Okazaki H., K. Kawai , A. Fukuda , T. Furuta , and S. Narahashi [2010],
Reconfigurable Amplifier Towards Enhanced Selectivity of Future Multi-band Mobile
Terminals, IEEE International Microwave Workshop Series on RF Front-ends for
Software Defined and Cognitive Radio Solutions (IMWS2010).
Oncu .A, S. Ohashi, M. Fujishima [2009-1] “12.1mW 10Gbps CMOS Pulse Transmitterfor 60GHz Wireless Communication,”Global Symposium on Millimeter Waves
Oncu .A and M. Fujishima [2009-2] “49 mW 5 Gbit/s CMOS receiver for 60 GHz
impulse radio,”Electron. Lett. vol 45, Issue 17, p.889–890
Oncu .A, S. Ohashi, K. Takano, T. Takada, J. Shimizu and M. Fujishima [2010]“1Gbps/ch 60GHz CMOS Multichannel Millimeter-Wave Repeater”,2010 Symposium
on VLSI Circuits, pp.93-94
Otsuka H., K. Yamanaka , H. Noto , Y. Tsuyama , S. Chaki , A. Inoue , and M.
Miyazaki ,[2008], Over 57% Efficiency C-band GaN HEMT High Power Amplifier
with Internal Harmonic Manipulation Circuits, 2008 IEEE/MTT-S International
Microwave Symposium Digest, pp. 311-314.
Sasaki .N, K. Kimoto, W. Moriyama, T. Kikkawa [2009], A Single-Chip UltraWideband Receiver With Silicon Integrated Antennas for Inter-Chip WirelessInterconnection, IEEE Journal of Solid-State Circuits, vol. 44, 382 - 393,
Satoh .M, Y. Fujino, T. Orikasa [2008], “Characterization of Large-Scale Deployable
Antenna Pattern Equipped with Engineering Test Satellite VIII on Orbit”, IEICE Trans.
on Comm., Vol.J91-B, No.12, pp.1641-1643.
Shigeta, Y., T. Yamamoto, K. Fujimori, M. Sanagi, S. Nogi and T. Tsukagoshi [2009],"Development of Ultrasonic Wireless Power Transmission System for Implantable
Electronic Devices," Proc. of European Microwave Week 2009, Oct. 2009, pp.49-52
Shinohara, N. [2010], “Recent SPS Research and Development Activity in Japan”,
International Academy of Astronautics 50th Anniversary Celebration Symposium on
Global Climate Change, Nagoya, 2010.8.30, Proceedings pp.73-77

Shimozawa M., N. Suematsu, H. Harada [2009], RF-IC for Multi-Band Multi-Mode
Transceiver, 2009 IEEE 20th International Symposium on Personal, Indoor and Mobile
Radio Communications, pp. 1-5.
Shinjo S., K. Tsutsumi , K. Mori , H. Okada , M. Inoue , and N. Suematsu [2008], ASK
and Pi/4-QPSK Dual Mode SiGe-MMIC Transceiver for 5.8 GHz DSRC Terminals
having Stabilized Amplifier Chain, 2008 IEEE/MTT-S International Microwave
Symposium Digest, pp. 1071-1074.
Shoki, H.[2010], “Trend of Wireless Power Transmission Technologies andApproached for Commercialization (in Japanese)”, Tech. Report of IEICE, WPT201007, 2010, pp.19-24
Suzuki .Y, Y. Imaizumi, K. Ohata [2008], “Short Time Measurement Method of
Onboard Antenna Pattern and In-Orbit Test Result of Beam Forming Network on
Engineering Test Satellite VIII”, IEICE Trans. on Comm., Vol. J91-B, No.12, pp.15691577.
Suzuki Y., S. Narahashi , and T. Nojima [2009], Highly Efficient Feed-Forward
Amplifier Employing a Harmonic Reaction Amplifier, Proceedings of 2009 IEEE Radio
Wireless Symposium (RWS2009), pp. 550-553.
Suzuki Y., J. Ohkawara , and S. Narahashi. [2010], Experimental Investigation on
Wideband Intermodulation Distortion Compensation Characteristics of 3.5-GHz band
140-W Class Feed-Forward Power Amplifier Employing GaN HEMTs, Proceedings ofAsia-Pacific Microwave Conference 2010 (APMC2010), pp. 1-5.
Takahagi .K, E. Sano [2010], High-Gain Silicon On-Chip Antenna with Artificial
Dielectric Layer, 2010 Asia-Pacific Radio Science Conference, (AP-RASC'10), DC1-5,
Toyama, Japan
Takahashi, H., et. al., [2009], "120-GHz-band BPSK Modulator and Demodulator for
10-Gbit/s Data Transmission", 2009 IEEE/MTT-S International Microwave Symposium
Digest, pp.558-561.
Takahashi, H., et. al., [2010], "10-Gbit/s QPSK Modulator and Demodulator or a 120GHz-band Wireless Link", 2010 IEEE/MTT-S International Microwave Symposium
Digest, pp.632-635.
Tsuji. H, Y. Fujino, N. Hamamoto, R. Suzuki [2009], “Interference Measurement
Experiment of Mobile Base Stations Using an Aircraft in Satellite-Terrestrial Integrated
Mobile Communication Systems”, Tech. Rep. of IEICE on Antenna and Propag., AP2009-70.

Umehira. M, Y. Ohtomo [2009], “Comparison of Frequency Operation Modes in a
Satellite/Terrestrial Integrated Mobile Communication System”, 2009 Society conv. of
IEICE, B-3-9.
Watanabe, S., et.al. [2009], "Low Phase Noise 77 GHz VCO with Optimized
Terminated Impedance at Fundamental and Second Harmonic Frequencies", 2009
IEEE/MTT-S International Microwave Symposium Digest, pp.693-696.
Yamaoka, A., et.al. [2010] S. Shinjo, , et.al., [2009], "0.4-5.8 GHz SiGe-MMIC
Quadrature Modulator Employing Self Current Controlled Mixer for Cognitive Radio",
IEICE TRANSACTIONS on Electronics, Vol.E92-B, no.12, pp.3701-3710
Taniguchi, E., et.al., [2009], "A 2 to 5 GHz-Band Self Frequency Dividing Quadrature
Mixer Using Current Re-Use Configuration", IEICE TRANSACTIONS on
Communications,Vol.E92-B, no.12, pp.3711-3716.
Yamamoto .S, S. Kozono, N. Hamamoto [2008]. “The Voice Communication
Experiment by the Small Portable Communication Terminal Using the Engineering Test
Satellite VIII”, IEICE Trans. on Comm., Vol. J91-B, No.12, pp.1620-1628.
Yoshida .H, T. Toyoda, T. Yasuda, Y. Ogasawara, M. Ishii, T. Murasaki, G. Takemura,
M. Iwanaga, T. Takida, Y. Araki, T. Hashimoto, K. Sami, T. Imayama, H. Shimizu, H.
Kokatsu, Y. Tsuda, I. Tamura, H. Masuoka, M. Hosoya, R. Ito, H. Okuni, T. Kato, K.
Sato, K. Nonin, K. Osawa, R. Fujimoto, S. Kawaguchi, H. Tsurumi, and N. Itoh [2008],"A Single-Chip 8-Band CMOS Transceiver for W-CDMA(HSPA) / GSM(GPRS) /EDGE with Digital Interface", Proc. of the 34th 2008 European Solid-State Circuits
Conference (ESSCIRC2008), Edinburgh, Scotland, pp.142-145, Sep. 2008.
Yoshida T., R. Ishikawa , and K. Honjo [2010], Microwave Inverse Class-F GaNHEMT Amplifier Circuit Using Internal Harmonic Treatment Network, IEICE
Transactions on Electronics, Vol.J93-C, No.12, pp. 557-564.