┠ḟ䠍䠊 ◊✲㛤Ⓨ䛾⫼ᬒ㧗㏿䞉⮬ᕫಖᣢᶵ⬟䜢᭷䛩䜛ග䝇䜲䝑䝏䞁䜾⣲Ꮚ៞᠕⩏ሿ኱Ꮫ⌮ᕤᏛ㒊ᩍᤵ䠎䠊ග䝇䜲䝑䝏䜈䛾せồ᮲௳䠏䠊᪂ᢏ⾡䛾⤂௓䠐䠊௒ᚋ䛾ᒎ㛤䞉௻ᴗ䜈䛾ᮇᚅ䞉ᮏᢏ⾡䛻㛵䛩䜛▱ⓗ㈈⏘䞉⏘Ꮫ㐃ᦠ䛾⤒Ṕ䞉ၥ䛔ྜ䜟䛫ඛ㟁ᏊᕤᏛ⛉ὠ⏣ ⿱அ12᪥ᮏᅜෆ䝖䝷䝣䜱䝑䜽䠄㼀㼎㼕㼠㻛㼟䠅◊✲㛤Ⓨ䛾⫼ᬒ

ග㏻ಙ䝛䝑䝖䝽䞊䜽䝁䜰䠋䝯䝖䝻䝛䝑䝖䝽䞊䜽10000୸༳䛿⥲ົ┬䝕䞊䝍䝩䞊䝮䝛䝑䝖䝽䞊䜽1000䜰䜽䝉䝇䝛䝑䝖䝽䞊䜽

100

PC
TV

CR

GW

10

OLT

RN

ER/AGR
1

OLT

2000

2005

2010

2015

2020

2025

2030

2035

すᬺ䠄ᖺ䠅

GW: Gateway

ONU

OLT

ONU
CR: Core Router
ER/AGR: Edge/Aggregation Router
OLT: Optical Line Terminal
ONU
RN: Remote Node
ONU: Optical Network Unit

0.1

ONUGW

RN RN䜲䞁䝍䝛䝑䝖䝖䝷䝣䜱䝑䜽䛾ቑ኱䛜⥆䛔䛶䛔䜛䚹ĺග㏻ಙ䜲䞁䝣䝷䜈䛾せồONU♫ෆ䝛䝑䝖䝽䞊䜽䠇 䝕䞊䝍䝉䞁䝍NW䛾ቑຍ䠇 5G䝅䝇䝔䝮䛾཰ᐜ34ග䝛䝑䝖䝽䞊䜽䛻䛚䛡䜛䝇䜲䝑䝏㏻ಙ䛾ග໬䝁䜰䠋䝯䝖䝻䝛䝑䝖䝽䞊䜽䝴䞊䝄㟁Ẽ䝹䞊䝍ග䝹䞊䝍䝕䞊䝍䛿඲䛶㟁Ẽಙྕ䛻ኚ᥮䝕䞊䝍䛾኱㒊ศ䛿ග䛾䜎䜎㏻㐣Ἴ㛗ከ㔜ಙྕἼ㛗ከ㔜ಙྕ䜶䝑䝆䚸䜰䜾䝸䝀䞊䝅䝵䞁䝹䞊䝍

䝁䜰䝹䞊䝍

ග䝇䜲䝑䝏

㟁Ẽ䝇䜲䝑䝏䠄䝟䜿䝑䝖஺᥮䠅

ග䝣䜯䜲䝞

ග䝣䜯䜲䝞

ගྜศἼᅇ㊰䜰䜽䝉䝇䝛䝑䝖䝽䞊䜽⤒㊰䝇䜲䝑䝏
㻝㼤㻺㻘㻌㻺㼤㻹

㟁Ẽ䝇䜲䝑䝏

ග㟁ኚ᥮ჾගྜศἼᅇ㊰⤒㊰䝇䜲䝑䝏㻝㼤㻺ග㟁ኚ᥮ჾἼ㛗㑅ᢥ䝇䜲䝑䝏
䠄௵ព䛾Ἴ㛗䜢௵ព䛾䝫䞊䝖䜈䠅

ග䝇䜲䝑䝏䜢䝛䝑䝖䝽䞊䜽䝜䞊䝗䛻ᑟධĺ᝟ሗ㏻ಙ䝛䝑䝖䝽䞊䜽䛻䛚䛡䜛䜶䝛䝹䜼䞊ᾘ㈝㔞䜢పῶĺ䝇䝹䞊䝥䝑䝖䛾ቑ኱䚸฼⏝ຠ⋡䛾ྥୖĺ㞀ᐖ᫬䛾䝥䝻䝔䜽䝅䝵䞁

O1, O2,O3,…, On

O1, O5,O3, O7,Ἴ㛗䝇䜲䝑䝏
䠄䛒䜛Ἴ㛗䜢㑅ᢥ䠅
O1, O2,O3,…, OnOk

O2, O4,O5, O8,5630

ග䝇䜲䝑䝏䜈䛾せồ᮲௳㻞㼤㻞㻌༢఩䝇䜲䝑䝏t䠍䠊ప೫Ἴ౫Ꮡᛶt䠎䠊ప䜽䝻䝇䝖䞊䜽䠄㻙㻠㻜㻌㼐㻮௨ୗ䠅䠏䠊ᗈᖏᇦືస䠄㻯䝞䞁䝗䚸㻯㻗㻸䝞䞁䝗䠅኱つᶍ໬䚸ከẁ໬㻺㻌㼤㻌㻺㻌䝇䜲䝑䝏䠐䠊పᦆኻ䠄䜹䝥䝷䜘䜚༑ศᑠ䛥䛔䠅

1

1

2

2

3

3

44

䠑䠊኱つᶍ 㻪㻌㻝㻢㼤㻝㻢㻞㼤㻞䝇䜲䝑䝏78✵㛫ග䝇䜲䝑䝏䛾ศ㢮䠄ᵓᡂ䠅䝕䝞䜲䝇✀㢮䞉ᮦᩱ✵㛫ᆺᑟἼ㊰ᆺ㟁☢▼䛻䜘䜛䝭䝷䞊䚸䝥䝸䝈䝮䛺䛹䛾⛣ື㻹㻱㻹㻿ᚤᑠ䝭䝷䞊ᅇ㌿㻸㻯㻻㻿ᾮᬗᒅᢡ⋡ไᚚ

▼ⱥ

⇕ගᏛຠᯝ

㻿㼕

⇕ගᏛຠᯝ

㻿㼕䜻䝱䝸䜰ὀධ㻵㻵㻵㻙㼂᪘༙ᑟయ䜻䝱䝸䜰ὀධ

㻺㼡㼙㼎㼑㼞㻌㼛㼒㻌㼟㼣㼕㼠㼏㼔㼑㼟ᶵᲔᘧ✵㛫ග䝇䜲䝑䝏䛾ᛶ⬟ẚ㍑㻔㻝㻕

㥑ືཎ⌮

㻸㻺

㟁ẼගᏛຠᯝ㻼㻸㼆㼀㟁ẼගᏛຠᯝ䝫䝸䝬䞊㟁ẼගᏛຠᯝ

┦ኚ໬ᮦᩱ⤖ᬗ㻙䜰䝰䝹䝣䜯䝇┦㌿⛣

MEMS:
LCOS:
LN:
PLZT:

㻝㻜㻢㻝㻜㻡㻝㻜㻠㻝㻜㻟㻝㻜㻞㻹㻱㻹㻿㻸㻯㻻㻿㻿㼕⣽⥺ᑟἼ㊰䠄⇕䠅㻿㼕⣽⥺ᑟἼ㊰䠄┦ኚ໬䠅▼ⱥᑟἼ㊰㻿㼕㻌⣽⥺ᑟἼ㊰䠄䜻䝱䝸䜰䠅㻸㻺ᑟἼ㊰㻼㻸㼆㼀ᑟἼ㊰㻝㻜㻝㻭㼘㼘㻙㼛㼜㼠㼕㼏㼍㼘㼙㼟P㼟㼚㼟㻿㼣㼕㼠㼏㼔㼕㼚㼓㻌㼠㼕㼙㼑

Micro electro mechanical systems
Liquid crystal on Si
Lithium niobate, LiNbO3
Lantern dope lead zirconate titanate
910┦ኚ໬ᮦᩱග䝇䜲䝑䝏䛾ᛶ⬟ẚ㍑㻔㻞㻕
ᮦᩱືసཎ⌮䝇䜲䝑䝏䞁䜾᫬㛫ᒅᢡ⋡ኚ໬⮬ᕫಖᣢᶵ⬟㻸㼕㻺㼎㻻㻟㟁ẼගᏛຠᯝ㼜㼟㻜㻚㻝㻌䠂䛺䛧㻵㻵㻵㻙㼂᪘༙ᑟయ䝥䝷䝈䝬ຠᯝ㼚㼟㻜㻚㻡 䠂䛺䛧㻿㼕㻻㻞⇕ගᏛຠᯝ㼙㼟㻜㻚㻝㻌䠂䛺䛧㻿㼕⇕ගᏛຠᯝ㽀㼟㻜㻚㻝 䠂䛺䛧

┦ኚ໬ᮦᩱ┦ኚ໬㼚㼟㻪㻌㻟㻜 䠂䛒䜚䜰䝰䝹䝣䜯䝇⤖ᬗ

㧗㏿ᑠᆺ

పᾘ㈝㟁ຊ

Optical rewritable media (DVD-RW, etc.)
Phase-change random access memory (PRAM)

DVD-RW

PRAM

512-Megabit chip (Samsung, 2009)
Optical recording

11Electrical recording1231

㻳㻿㼀㻌㻔㻳㼑䡔㻿㼎䡕㼀㼑䡖㻕ග䝟䝹䝇㥑ືᆺග䝀䞊䝖䝇䜲䝑䝏Temperature[ºC]Amorphizationcondition618

Melting point

Crystallization
condition

140

Crystallization
point

Amorphous

Crystalline

100

Time [ns]Ge2Sb2Te5 (GST-225)
Daiki Tanaka, Yuya Shoji, Masashi Kuwahara, Xiaomin Wang, Kenji Kintaka, Hitoshi
Kawashima, Tatsuya Toyosaki, Yuichiro Ikuma, and Hiroyuki Tsuda, “Ultra-small, self-holding,
optical gate switch using Ge2Sb2Te5 with a multi-mode Si waveguide,” Optics Express, Vol. 20,
Iss. 9, pp. 10283–10294 (2012).
1314

ᛂ⟅㏿ᗘホ౯ᐇ㦂⣔LD: Laser diode
PG: Pulse generator

Ȝ: 660 nmLD

Optical pulse

Laser pulse irradiation
LensesN. A. = 0.8

Bias-TPG

Bias current

Electrical pulse
Optical fiber
Coaxial cable

Crystallization pulse: width 400 ns, peak power 50 mW
Amorphization pulse: width 40 ns, peak power 160 mW

1516⧞䜚㏉䛧ືస

Ἴ㛗౫ᏑᛶExtinction Ratio: 9.3 dB
Cycles: >2000

171832᪂ᢏ⾡䛾⤂௓㟁ὶ㥑ືᆺ┦ኚ໬ග䝇䜲䝑䝏ග䝟䝹䝇㥑ືᆺ䠖 ከᩘ䛾䝇䜲䝑䝏䜢㥑ື䛷䛝䛺䛔䚹㞟ගගᏛ⣔䛺䛹኱ᆺ䛾⿦⨨䛜ᚲせ䛷䛒䜛䚹ཎ⌮ືస☜ㄆ䚸ᮦᩱホ౯䛻䛿㐺䛧䛶䛔䜛䚹㟁ὶ㥑ືᆺ䠖㻿㼕ᑟἼ㊰ከᩘ䛾䝇䜲䝑䝏䜢㞟✚ྍ⬟䛷䛒䜛䚹㥑ື⣔䛾ᵓᡂ䛜ᐜ᫆䛷䛒䜛䚹1920㟁ὶ㥑ືᆺ┦ኚ໬ග䝇䜲䝑䝏ᐇ⏝໬䛻ྥ䛡䛯ㄢ㢟• ㏱㐣ᦆኻ䛾పῶ䞉䞉ᮦᩱ㛤Ⓨ• ప䜽䝻䝇䝖䞊䜽ග䝇䜲䝑䝏ᅇ㊰䛾฼⏝• ⣲Ꮚᑑ࿨䠄䝇䜲䝑䝏䞁䜾ᅇᩘୖ㝈䠅䛾ᘏఙ䠄ቑຍ䠅• ከᵝ䛺䝅䝸䝁䞁ගᅇ㊰䛸䛾㞟✚

Ͳ4.5

Transmittance[dB]

Ͳ5
Ͳ5.5
Ͳ6
Ͳ6.5
Ͳ7
Ͳ7.5

Initialstate(cry,cry)ON(amo,amo)

Ͳ8
Ͳ8.5
1525

OFF(cry,cry)

1545

1565

1585

1605

1625

Wavelength[nm]

21

௒ᚋ䛾ᒎ㛤

22

௻ᴗ䜈䛾ᮇᚅᮏᢏ⾡䛻㛵䛩䜛▱ⓗ㈈⏘ᶒ• ┦ኚ໬ᮦᩱᢏ⾡䜢ᣢ䛴௻ᴗ䛸䛾ඹྠ◊✲• ⷧ⭷〇㐀ᢏ⾡䜢ᣢ䛴௻ᴗ䛸䛾ඹྠ◊✲• ග䝇䜲䝑䝏ᢏ⾡䛻⯆࿡䜢ᣢ䛴௻ᴗ䛸䛾ඹྠ◊✲• ┦ኚ໬ᮦᩱ⣲Ꮚ䛾௚ศ㔝䜈䛾㐺⏝䛻⯆࿡䜢ᣢ䛴௻ᴗ䛸䛾ඹྠ◊✲23

䈄 Ⓨ᫂䛾ྡ⛠䈄 ฟ㢪␒ྕ䈄 ฟ㢪ே䠖ග䝇䜲䝑䝏䠖≉㢪㻞㻜㻝㻣㻙㻜㻡㻟㻡㻜㻣䠖㻔㻝㻕㻌Ꮫᰯἲே៞᠕⩏ሿ䠖㻔㻞㻕㻌ᅜ❧◊✲㛤Ⓨἲே⏘ᴗᢏ⾡⥲ྜ◊✲ᡤ䠖㻔㻟㻕㻌ᅜ❧◊✲㛤Ⓨἲே≀㉁䞉ᮦᩱ◊✲ᶵᵓ䈄 Ⓨ᫂⪅䠖㻔㻝㻕㻌ຍ⸨೺ኴ㑻䚸ὠ⏣⿱அ䠖㻔㻞㻕㻌᱓ཎṇྐ䚸Ἑᓥᩚ䠖㻔㻟㻕㻌㭯ᒸ ᚭ2433⏘Ꮫ㐃ᦠ䛾⤒Ṕ䛚ၥ䛔ྜ䜟䛫ඛঅড፯‫ܖٻؽ‬䈄䈄䈄䈄㻞㻜㻜㻡ᖺ㻙㻞㻜㻜㻢ᖺ 㻺㻱㻰㻻㻌኱ᏛⓎ஦ᴗ๰ฟᐇ⏝໬◊✲㛤Ⓨ㻞㻜㻜㻣ᖺ㻙㻞㻜㻜㻥ᖺ 㻺㻱㻰㻻㻌኱ᏛⓎ஦ᴗ๰ฟᐇ⏝໬◊✲㛤Ⓨ஦ᴗ㻞㻜㻝㻝ᖺ㻙㻞㻜㻝㻞ᖺ 㻺㻱㻰㻻㻌┬䜶䝛䝹䜼䞊㠉᪂ᢏ⾡㛤Ⓨ஦ᴗ㻞㻜㻝㻟ᖺ㻙 㻺㻵㻯㼀ጤク◊✲ 䛂㼀䝞䞁䝗䚸㻻䝞䞁䝗䛻䜘䜛኱Ἴ㛗✵㛫฼⏝ᢏ⾡䛾㛤Ⓨ䛃䈄 㻞㻜㻝㻡ᖺ㻙 㻺㻱㻰㻻ḟୡ௦ேᕤ▱⬟䞉䝻䝪䝑䝖୰᰾ᢏ⾡㛤Ⓨ ඛᑟ◊✲ 䛂ᗈゅ䞉ከἼ㛗䝺䞊䝄䝺䞊䝎䞊䛻䜘䜛㉸㧗ឤᗘ䝁䜾䝙䝔䜱
䝤どぬ䝅䝇䝔䝮䛃ᄂᆮᡲઃਖ਼ᡶஜᢿ
≷≨≯ 03‟5427‟‣…39⁗‟ ⁓⁛⁞ toiawasesaki-ipc′⁓⁖⁥⁦†⁝⁗⁛⁡†⁓⁕†⁜⁢

25

26

䝘䝜䝔䜽䝜䝻䝆䞊䝥䝷䝑䝖䝣䜷䞊䝮฼⏝ᶵ㛵䞉⿦⨨ᐇ᪋ᶵ㛵䠖ᅜ❧◊✲㛤Ⓨἲே ⏘ᴗᢏ⾡⥲ྜ◊✲ᡤ䛴䛟䜀䜲䝜䝧䞊䝅䝵䞁䜰䝸䞊䝘᥎㐍䝉䞁䝍䞊ᢸᙜ⪅䠖ᒣᓮ ᑗႹ฼⏝⿦⨨䠖ArFᾮᾐ㟢ග⿦⨨䚸i⥺䝇䝔䝑䝟⿦⨨䚸䝇䝟䝑䝍䝸䞁䜾⿦⨨䚸⵨╔⿦⨨㻭㼞㻲ᾮᾐ㟢ග⿦⨨䜢฼⏝䛧䛶ヨస䛧䛯䝅䝸䝁䞁ගᅇ㊰䛾ୖ䛻䝇䝟䝑䝍䝸䞁䜾䛻䜘䜛ᡂ⭷䚸㼕⥺㟢ග⿦⨨䜢⏝䛔䛯䝟䝍䞊䝙䞁䜾䜢᪋䛧䚸䜶䝑䝏䞁䜾䞉䝸䝣䝖䜸䝣䜢⾜䛖䛣䛸䛷┦฼⏝ᡂᯝ ኚ໬ග䝇䜲䝑䝏䜢స〇䛧䛯䚹┦ኚ໬ᮦᩱ䛻䛿䚸㻳㼑㻞㻿㼎㻞㼀㼑㻡䜢฼⏝䛧䛯䚹┦ኚ໬ග䝇䜲䝑䝏䛻䝟䝹䝇㟁ᅽ䜢༳ຍ䛧䚸Ἴ㛗㻝㻡㻞㻡㼚㼙䡚㻝㻢㻞㻡㼚㼙䛻Ώ䛳䛶⧞䜚㏉䛧ග䝇䜲䝑䝏䞁䜾ືస䜢☜ㄆ䛩䜛䛣䛸䛜ฟ᮶䛯䚹2734