ECSCRM 2020
2021

PROGRAM
24-28 Oct.

Tours - France

matériaux microélectroniqueacoustique nanotechnologies

TUTORIAL DAY

sunday 24 oct

1990-2020: 30 YEARS OF SiC DEVICE DEVELOPMENT
From technology to applications

09:15 / 09:30

Welcome of the Tutorial Day

09:30 / 12:30

Su-1A : Tutorial 1

9:30

Didier CHAUSSENDE (SIMAP)

10:30

Dethard PETERS (Infineon)

11:30

Peder BERGMAN (Linköping University and
STMicroelectronics SiC AB)

AUDITORIUM
AUDITORIUMDESCARTESDESCARTES

	Historical evolution of SiC material through the lens of bulk andepitaxial growth	How SiC technology has been matured for power devices across thelast 3 decades

Present Status of SiC Materials and Characterization

14:00 / 17:00

Su-2A : Tutorial 2

14:00

Fabrizio ROCCAFORTE (CNR-IMM)

	Contacts, doping & MOS interfaces: An overview of processing issuesin SiC device technology

15:00

Graham S. WOOD (University of Edinburgh)
Silicon Carbide resonating sensors© Sébastien Andréi

16:00

Michel PITON (Alstom Tarbes)

How is SiC a game changer for high power applications?

2

ORAL PRESENTATIONS

monday 25 oct

08:50 / 10:20
08:50

AUDITORIUMRONSARDPlenary Session AUDITORIUMRONSARD

09:35

Mo-PS-02 | SAGGIO Mario
Designing SiC devices for the transition to e-mobility
STMicroelectronics

10:40 / 12:10
10:40

Mo-1A : SiC Epitaxy

Mo-PS-01 | PALMOUR John
Driving SiC into the Mainstream
Wolfspeed

Mo-1A-01 | ZIELINSKI Marcin	Precise control of Al incorporation during CVD growth of SiC epilayers
using hydrogen chloride	M. ZIELINSKI¹, M. BUSSEL¹, M. PORTAIL², A. MICHON², Y. CORDIER²¹ NOVASiC, Savoie Technolac, France² CRHEA-CNRS

11:00

Mo-1A-02 | JI Shiyang
	Characterization and improvement of the doping uniformity inside
4H-SiC trenches filled by CVD

	S. JI¹, K. KOJIMA¹, M. SOMETANI¹, S. HARADA¹, Y. TANAKA¹,
H. YAMAGUCHI¹¹ National institute of advanced industrial science and technology (AIST)

11:20

Mo-1A-03 | CRIPPA Danilo
Opening through 8-inch silicon carbide epitaxy	D. CRIPPA¹, M. MAUCERI¹, S. PRETI¹, M. AZADMAND¹, C. VECCHIO¹,
M. PUGLISI¹, G. CIVIDINI¹¹ LPE, Italy

11:40

Mo-1A-Inv | TSUCHIDA Hidekazu	Recent progress in 4H-SiC CVD growth and defect control

TSUCHIDA Hidekazu

CRIEPI

13:30 / 15:00
13:30

Mo-2A : MOSFETs

Mo-2A-Inv | VELIADIS Victor
	SiC mass commercialization: present status and barriers to overcome

VELIADIS Victor

PowerAmerica, North Carolina State University

14:00

Mo-2A-01 | DOMEIJ Martin	Gate oxide reliability and VTH stability of planar SiC MOS technology	M. DOMEIJ¹, J. FRANCHI¹, S. MASLOUGKAS¹, P. MOENS¹, J. LETTENS¹, J. CHOI¹,
F. ALLERSTAM¹¹ ON Semiconductor

14:20

Mo-2A-02 | TOMINAGA Takaaki	Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs

	T. TOMINAGA¹, T. IWAMATSU¹, Y. NAKAO¹, H. AMISHIRO¹,
H. WATANABE¹, N. MIURA¹, S. YAMAKAWA¹, S. NAKATA²¹ Mitsubishi Electric Corporation² Kanazawa Institute of Technology

3

ORAL PRESENTATIONS

monday 25 oct

14:40

Mo-2A-03 | KOCHOSKA Sara	Pulsed forward bias body diode stress of SiC MOSFETs with individual
mapping of basal plane dislocations
S. KOCHOSKA¹, M. DOMEIJ, S. SUNKARI, J. JUSTICE, H. DAS, H. LEE, X.Q. HU, T. NEYER¹ Corp. R&D - SiC development

15:20 / 16:50
15:20

Mo-3A : Quantum Technology

Mo-3A-01 | KOBAYASHI Takuma
	Generation and transformation of intrinsic color centers in 4H-siliconcarbide via ion implantation and annealing

15:40

 . KOBAYASHI¹, M. RüHL², J. LEHMEYER², L. ZIMMERMANN², M. KRIEGER²,
T
H. WEBER²
¹ Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Osaka University² Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)

Mo-3A-02 | UDVARHELYI Péter
	Vibronic states and their effect on the temperature and strain
dependence of silicon-vacancy qubits in 4H-SiC

 . UDVARHELYI¹, C. BABIN², F. KAISER², D. LUKIN³, T. OHSHIMA⁴, J. UL-HASSAN⁵,
P
N.T. SON⁵, J. VUCKOVIC³, J. WRACHTRUP², A. GALI¹, G. THIERING¹, N. MORIOKA⁶¹ Wigner Research Centre for Physics
	² 3rd Institute of Physics, University of Stuttgart and Institute for Quantum Science andTechnology IQST
³ E. L. Ginzton Laboratory, Stanford University
⁴ National Institutes for Quantum and Radiological Science and Technology
⁵ Department of Physics, Chemistry and Biology, Linköping University©Sébastien Andréi

⁶ Institute for Chemical Research, Kyoto University

4

ORAL PRESENTATIONS
16:00

monday 25 oct

Mo-3A-03 | ABE Yuta
Electrical detection of TV2a-type VSi centres in SiC-MOSFET	Y. ABE¹, A. CHAEN¹, M. SOMETANI², S. HARADA², Y. YAMAZAKI³,
T. OHSHIMA³, T. UMEDA⁴

	¹ University of Tsukuba, National Institutes for Quantum and Radiological
Science and Technology² National Institute of Advanced Industrial Science and Technology (AIST)³ National Institutes for Quantum and Radiological Science and Technology
⁴ University of Tsukuba

16:20

Mo-3A-Inv | DYAKONOV Vladimir	Engineering and coherent control of silicon vacancy defects in SiC

DYAKONOV Vladimir

Julius Maximilian University of Würzburg

INVITED POSTERS
16:50 / 17:10

AUDITORIUM RONSARD

Mo-IP-01 | YODO Mikako	Seed surface orientation dependence of the dislocation formation at
the initial stage of physical vapor transport growth of 4H-SiC crystals

M. YODO¹, H. OKANO¹, N. OHTANI¹¹ Kwansei Gakuin University, School of Science and Technology
Mo-IP-02 | YAMASHIRO Yusuke
	Behavior of Shockley-type Stacking Faults in SiC Superjunction
MOSFET under Body Diode Current Stress	Y. YAMASHIRO¹, M. OKADA¹, M. BABA¹, T. TANAKA², H. WATANABE²,
K. KOJIMA¹, S. HARADA¹, H. YAMAGUCHI¹¹ National Institute of Advanced Industrial Science and Technology, Japan² Advanced Technology R&D Center, Mitsubishi Electric Corporation, Japan

Mo-IP-03 | MLETSCHNIG Kristijan Luka	Aluminum activation in 4H-SiC measured on laterally contacted MOS
capacitors with a buried current-spreading layer

	K.L. MLETSCHNIG¹, M. ROMMEL², W. SCHUSTEREDER¹, P. PICHLER²¹ Infineon Technologies Austria AG² Fraunhofer Institute for Integrated Systems and Device Technology IISBMo-IP-04 | VUONG VAN Cuong	500oC Operation Characteristics of 4H-SiC MOSFETs Differential
Amplifier Circuit for Harsh Environment Applications

	C. VUONG VAN¹, M. TETSUYA¹, K. KAZUYA¹, S. TAKUMA¹,
K. SHIN-ICHIRO1¹ Research Institute for Nanodevice and Bio Systems, Hiroshima University

5Industrial session program

POSTERS

Date: October 25th, 17:20-19:45
monday 25 oct
Place: Level -2

Time
17:20
17:23
17:26
17:29
17:32
17:35
17:38
17:41
17:44
17:47
17:50
17:53
17:56
17:59
18:02
18:05
18:08
18:11
18:14
18:17
18:20
18:23
18:26
18:29
18:32
18:35
18:38-18:50

6

Exhibitor
Wolfspeed
AixtronSK Siltron CSS
LPESoitecNOVASiC
3D-Micromac AG
PureonSemilabAnnealsys
Centrotherm
Entergis / Sinmat
X-Fab
RigakuPlasma-Therm
Beneq
Toray Research Center
Ceramic Forum
Lasertec Corp
SilvacoMersenEpiluvac
SchuppCameca
EtaMax
SGL Carbon
Break

INDUSTRIALSESSIONS
monday25 oct
Time
18:50
18:53
18:56
18:59
19:02
19:05
19:08
19:11
19:14
19:17
19:20
19:23
19:26
19:29
19:32
19:35
19:38

Exhibitor
Nippon Kornmeyer Carbon Group
Meister Abrasives AG
mi2-factory
Fraunhofer IISBCMC Materials
TRUMPF Hüttinger
Kiselkarbid i Stockholm AB (KISAB)SOMOSSaint-Gobain
IBS
LayTecRENA Technologies
Toyota Tsusho corporation
Pfeiffer VacuumClas-SiC Wafer Fab
CS Clean Solutions AG
Disco (to be confirmed)

LEVEL -2

6

ORAL PRESENTATIONS
08:30 / 10:00

8:30 / 1

AUDITORIUM RONSARD

AUDITORIUM DESCARTES

Tu-1A : Diodes & Superjunctions

Tu-1B : MOS Processing

08:30 Tu-1A-Inv | GODIGNON Philippe	Edge terminations for 4H-SiC
power devices: a review
GODIGNON Philippe

CNM-CSIC

09:00

Tu-1A-01 | MALOUSEK Roman
	SiC diode with vertical superjunction realized using channeled implant and a multi epitaxial growth	R. MALOUSEK¹, J. CHOCHOL¹,
H. DAS¹, J. JUSTICE¹,
S. SUNKARI¹, F. ALLERSTAM¹,
K. GUMAELIUS¹, J. FRANCHI¹,
M. DOMEIJ¹, R. WADA²,
T. KUROI²¹ ON Semiconductor² Nissin Ion Equipment

09:20 Tu-1A-02 | YUAN Zimo	Localized Lifetime Control of 10kV
4H-SiC PiN Diodes by MeV Proton
Implantation
	Z. YUAN¹, K. JACOBS¹,
M. BAKOWSKI², A. SCHöNER³,
S. RESHANOV³, W. KAPLAN³,
H. NEE¹, A. HALLéN¹

	¹ KTH Royal Institute of Technology,
Sweden² RISE Acreo Swedish ICT AB, Sweden³ II-VI Kista AB, Sweden

09:40 Tu-1A-03 | GHANDI Reza
	Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes
	R. GHANDI¹, C. HITCHCOCK¹,
S. KENNERLY¹¹ GE Research

7

tuesday 26 oct

08:30 Tu-1B-01 | MIKAMI Kyota
	Channel mobility of NO- andN2-annealed 4H-SiC(0001) p-channel MOSFETs with various donor
concentrations of n-body	K. MIKAMI¹, K. ITO¹, K. TACHIKI¹, T.
KIMOTO¹¹ Kyoto University

08:50 Tu-1B-02 | ITO Koji
	Universal Mobility in SiC MOSFETs
with Very Low Interface State Density	K. ITO¹, M. HORITA, J. SUDA, T.
KIMOTO¹ Kyoto University

09:10 Tu-1B-03 | FIORENZA Patrick	Charge trapping mechanisms innitridated SiO2/4H-SiC MOSFET
interfaces: threshold voltage instability and interface chemistry	P. FIORENZA¹, C. BONGIORNO¹, M.
SAGGIO², F. GIANNAZZO¹, F. ROCCAFORTE¹¹ CNR-IMM, Italy² STMicroelectronics

09:30 Tu-1B-Inv | TACHIKI Keita
	Mobility improvement in 4H-SiC
MOSFETs by H2 etching before SiO2
deposition and interface nitridation
	K. TACHIKI¹, K. ITO¹, K. MITSUAKI¹, T.
KIMOTO¹
	¹ Dept. of Electronic Sci. & Eng., Kyoto
University

ORAL PRESENTATIONSAUDITORIUMRONSARDRONSARD
10:20 / 12:10 AUDITORIUM

10:20

Tu-2A : Extended defects

Tu-2A-Inv | ELLISON Alexandre	Dislocation density evolution in PVT
growth of 150 and 200 mm SiC

ELLISON Alexandre

STMicroelectronics Silicon Carbide AB

10:50

Tu-2A-01 | ZIMBONE Massimo
	Extended defects in 3C-SiC: the caseof Stacking Faults

 . ZIMBONE¹, A. SARIKOV²,
M
C. BONGIORNO¹, A. MARZEGALLI³,
C. CALABRETTA¹, L. MIGLIO⁵,
V. SCUDERI¹, F. LA VIA¹
¹ CNR-IMM, Italy
	² V. Lashkarev Institute of Semiconductor
Physics NAS Ukraine, Ukraine	³ L-NESS and Dipartimento di Fisica, Politecnico di Milano, Italy
⁵ L-NESS and Dipartimento di Scienza dei
Materiali, Università degli Studi di Milano-Bicocca, Italy

11:10

Tu-2A-02 | ASADA Satoshi	Impacts of single Shockley stacking
fault on electrical characteristics of
4H-SiC bipolar devices analyzed by
TCAD simulation

	S. ASADA¹, H. TSUCHIDA¹,
T. MIYAZAWA¹¹ Central Research Institute of ElectricPower Industry

11:30

Tu-2A-03 | TAKANO Kazumi	Effective method (Selective E-V-C
technique) to screen out the BPDs
that cause reliability degradation

K. TAKANO¹, Y. IGARASHI¹¹ ITES

11:50

Tu-2A-04 | SARIKOV Andrey	Molecular dynamics simulations
study of stacking fault annihilation
mechanism in 3C-SiC layers epitaxially grown on Si(001) substrates
 . SARIKOV¹, A. MARZEGALLI²,
A
L. BARBISAN³, M. ZIMBONE⁴,
C. BONGIORNO4, M. MAUCERI5,
D. CRIPPA6, F. LA VIA4, L. MIGLIO³
¹ V. Lashkarev Institute of Semiconductor Physics NAS Ukraine ² L-NESS and

Dipartimento di Fisica, Politecnico di
Milano, Italy ³ L-NESS and Dipartimento
di Scienza dei Materiali, Università degliStudi di Milano-Bicocca, Italy 4 CNR-IMM,
Italy 5 LPE, Italy 6 LPR S.p.A, Italy8

tuesday 26 oct
AUDITORIUMDESCARTESDESCARTES
10:20 / 12:00 AUDITORIUM
Tu-2B : Materials & Defects

10:20

Tu-2B-01 | DO Euihyeon
	Expansion patterns of single Shockley stacking faults from mechanicalscratches on 4H-SiC epilayers

E. DO¹, M. KANEKO¹, T. KIMOTO¹	¹ Dept. of Electronic Sci. & Eng., Kyoto
University

10:40	Tu-2B-02 | MAHADIK Nadeemullah	Microstructural Analysis ofExtended defects in Thick SiC Epitaxial Layers using UVPL and X-ray
topography	N. MAHADIK¹, R. STAHLBUSH¹,
K. INABA², A. TAKASE³, W. SUNG⁴¹ Naval Research Laboratory² Rigaku Corporation Japan³ Rigaku Americas Corporation
⁴ SUNY Polytechnic Institute Colleges ofNano. Sci. and Engr

11:00 Tu-2B-03 | BAIERHOFER Daniel	Defect Reduction in Epilayers for
SiC trench MOSFETs by Enhanced
Epitaxial Growth	D. BAIERHOFER¹, B. THOMAS¹,
F. STAIGER¹, B. MARCHETTI¹,
C. FöRSTER¹, T. ERLBACHER²¹ Robert Bosch GmbH
	² Friedrich-Alexander University of Erlangen-Nuremberg

11:20 Tu-2B-04 | DAS Hrishikesh	A deeper look into the effects ofextended defects in SiC epitaxial
layers on device performance andreliability	H. DAS¹, S. SUNKARI¹, J. JUSTICE¹,
D. HAMANN¹¹ ON Semiconductor

11:40	Tu-2B-05 | ZIMBONE Massimo
	Extended defects in 3C SiC: Inverted
domain boundary	M. ZIMBONE¹, C. BONGIORNO¹, C.
CALABRETTA¹, G. FISICARO¹, A. LA
MAGNA¹, V. SCUDERI¹, F. LA VIA¹
¹ CNR-IMM, Italy

ORAL PRESENTATIONS

tuesday 26 oct

13:30 / 15:00 AUDITORIUMRONSARD
AUDITORIUMRONSARD 13:30 / 14:50 AUDITORIUM
AUDITORIUMDESCARTESDESCARTES
Tu-3B:
Schottkycontacts
Tu-3A : 3C-SiC
13:30 Tu-3A-Inv | LA VIA Francesco
	New approaches and new understanding in the growth of
3C-SiC:from thin film to bulk

13:30

I deal Thermionic Field Emission and
Field Emission Transport throughMetal/Heavily-Doped SiC Schottky
Barriers

LA VIA Francesco

CNR-IMM, Italy

14:00

Tu-3A-01 | CALABRETTA Cristiano	Impact of N doping on 3C-SiC defects	C. CALABRETTA¹, A. CANNIZZARO¹,
V. SCUDERI¹, R. ANZALONE²,
M. MAUCERI³, D. CRIPPA³,
S. BONINELLI¹, F. LA VIA¹
¹ CNR-IMM, Italy² STMicroelectronics, Italy³ LPE, Italy

14:20

Tu-3A-02 | BONINELLI Simona

	Growth of thick [111]-oriented
3C-SiC films on T-shaped Si micropillars

	S. BONINELLI¹, M. AGATI¹,
C. CALABRETTA¹,
F. MANCARELLA¹, M. MAUCERI2,
D. CRIPPA2, M. ALBANI3,
R. BERGAMASCHINI3, L. MIGLIO3,
F. LA VIA¹

¹ CNR-IMM, Italy
2
LPE S.P.A., Italy
	3
L-NESS and Dipartimento di Scienza
dei Materiali, Università di Milano-Bicocca

14:40

Tu-3A-03 | FERRO Gabriel	3C-SiC heteroepitaxial layersgrown on silicon substrates withvarious orientations

	G. FERRO¹, T. YEGHOYAN,
F. CAUWET, V. SOULIèRE

	¹ Laboratoire des Multimateriaux etInterfaces

9

Tu-3B-01 | HARA Masahiro	M. HARA¹, H. TANAKA², M. KANEKO¹,
T. KIMOTO¹¹ Kyoto University² Osaka University

13:50

Tu-3B-02 | VIVONA Marilena	Electrical properties of Ni/heavilydoped 4H-SiC Schottky contacts

	M. VIVONA¹, G. GRECO¹, M. SPERA¹,
P. FIORENZA¹, F. GIANNAZZO¹,
A. LA MAGNA¹, F. ROCCAFORTE¹¹ CNR-IMM, Italy

14:10

Tu-3B-03 | BELLOCCHI Gabriele	Influence of thickness, deposition
method and annealing temperature
on Ti/4H-SiC Schottky barrier height	G. BELLOCCHI¹, M. VIVONA²,
C. BONGIORNO², P. BADALà¹,
A. BASSI¹, S. RASCUNà¹,
F. ROCCAFORTE²¹ STMicroelectronics, Italy² CNR-IMM, Italy

14:30

Tu-3B-04 | RENZ Arne Benjamin	Engineering the Schottky interfaceof 3.3 kV SiC JBS diodes using a P2O5
surface passivation treatment

	A.B. RENZ¹, A. PEREZ-TOMAS²,
O.J. VAVASOUR¹, Q. CAO¹, V.A. SHAH¹,
Y. BONYADI³, V. PATHIRANA⁴,
T. TRAJKOVIC⁴, G.W.C. BAKER¹,
P. MAWBY¹, P.M. GAMMON¹
	¹ University of Warwick, School of Engineering	² Catalan Institute of Nanoscience andNanotechnology	³ Lyra Electronics, Warwick University
Campus, Wellesbourne, UK
⁴ Cambridge Microelectronics Ltd., Capital
Park, Fulbourn, Cambridge, UK

ORAL PRESENTATIONS
15:20 / 16:40 AUDITORIUM RONSARD
Tu-4A : HV and advanced devices

15:20

Tu-A4-01 | SUNDARESAN Siddarth	Impact of device design parameters on 15 kV SiC MOSFET performance	S. SUNDARESAN, J. PARK¹,
V. MULPURI¹, R. SINGH¹¹ GeneSiC Semiconductor

tuesday 26 oct
15:20 / 17:00 AUDITORIUM DESCARTES
Tu-4B : Fundamental properties

15:20¹ Kyoto University² Osaka University

15:40

Tu-A4-02 | NEO Lophitis	Compact Trench Floating Field
Rings termination for 10kV+ rated
SiC n-IGBTs
	L. NEO¹, P.M. GAMMON², A. RENZ²,
T. DAI², A. TIWARI³, T. TRAJKOVIC³,
T.A. MAWBY², M. ANTONIOU²¹ University of Nottingham² University of Warwick³ University of Cambridge

16:00 Tu-A4-03 | RAHIMO Munaf
	Advanced 1200V SiC MOSFET basedon Singular Point Source MOS(S-MOS) Technology	M. RAHIMO¹, I. NISTOR¹,
D. GREEN²¹ mqSemi AG² Silvaco Europe Ltd.

16:20

Tu-A4-04 | OTTAVIANI Laurent	Neutron detection by SiC- andDiamond- based sensors

	L. OTTAVIANI¹, O. PALAIS¹, A. KLIX²,
C. DESTOUCHES³, A. LYOUSSI³

	¹ IM2NP - UMR CNRS 7334, Aix-Marseille
University
	² KIT- Institute of Neutron Physics andReactor Technology
³ INSTN - Bâtiment 238 Centre CEA de
Cadarache

Tu-4B-01 | ISHIKAWA Ryoya

 nisotropy of electron mobility inA
4H-SiC over wide ranges of donor
concentration and temperature	
R. ISHIKAWA¹, M. HARA¹,
H. TANAKA², M. KANEKO¹,
T. KIMOTO¹

15:40 Tu-4B-02 | STAHLBUSH Robert	Tracking the Lifetime Enhancement
by Oxidation in 4H-SiC Epilayers

 . STAHLBUSH¹, N. MAHADIK¹,
R
P. BONANNO¹, D. LICHTENWALNER²,
S. RYU²¹ Naval Research Laboratory² Wolfspeed, Inc.

16:00

Tu-4B-03 | DIALLO Lindor

Enhancement of the magnetic

properties of SiC by ion implantation-towards a Diluted Magnetic
Semicondutor at Room Temperature
L. DIALLO¹, A. FNIDIKI²,
L. LECHEVALLIER², L. ZHANG²,
M. LAZAR³, M. MARTEAU⁴,
A. DECLEMY⁴
¹ Light, nanomaterials, nanotechnologies
University of Technology of Troyes (UTT)& CNRS ERL 7004 12 rue Marie Curie CS
42060 10004 Troyes, France.
	² Normandie University, INSA Rouen, UNIROUEN, CNRS, GPM, 76800 Rouen, France³Light, nanomaterials, nanotechnologies
University of Technology of Troyes (UTT) &CNRS ERL 7004, France
⁴ Institut PPRIME, UPR 3346 CNRS, Université de Poitiers, ENSMA, SP2MI, France

16:20 Tu-4B-04 | CHENG Qianyu
	Ray-tracing simulation analysis ofeffective penetration depths of all
dislocation types lying in the basal
plane on grazing incidence X-ray
topographs of 4H-SiC Wafers	Q. CHENG¹, H. PENG¹, S. HU¹, Z.
CHEN¹, Y. LIU¹, B. RAGHOTHAMACHAR¹, M. DUDLEY¹¹ Stony Brook University

10

ORAL PRESENTATIONS

tuesday 26 oct
15:20 / 17:00 AUDITORIUM DESCARTES
16:40

Tu-4B-05 | NISHIO Johji ransmission electron microscopy
Tstudy of single Shockley stacking
faults in 4H-SiC expanded from basal
plane dislocation segments accompanied by threading edge dislocations on both ends

J. NISHIO¹, R. IIJIMA¹, C. OTA¹

11

©Sébastien Andréi¹ Corporate R&D Center, Toshiba Corporation

POSTERS
17:00 / 19:00

tuesday 26 oct
LEVELLEVEL-2-2
Tu-P: Tuesday – Characterization and modelling

Tu-P-01 | BORGHESE Alessandro

A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs

A. BORGHESE¹, M. RICCIO¹, L. MARESCA¹, G. BREGLIO¹, S. KICIN², A. IRACE¹¹ Università degli Studi di Napoli Federico II² ABB Power Grids Switzerland Ltd

Tu-P-02 | SHIMONO Takaya

I-V characteristics of power devices fabricated on bonded substrate of 3C-SiC poly crystal
and 4H-SiC single crystal

T. SHIMONO¹, H. UCHIDA², A. ONOGI¹, H. FUJIWARA¹¹ MIRISE Technologies Corporation² SICOXS Corporation

Tu-P-03 | DANG Yifan

Numerical Investigation and Optimization of Long-term Stability for SiC Solution Growth

Y. DANG¹, C. ZHU², M. IKUMI¹, M. TAKAISHI¹, W. YU², W. HUANG¹, X. LIU¹,
S. HARADA¹, T. MIHO¹, T. UJIHARA¹¹ Department of Material Science and Engineering, Nagoya University² Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and System for
Sustainability (IMaSS), Nagoya University

Tu-P-04 | RAMM Mark

Simulation Study of Crack Formation in Bulk SiC Crystals Grown by PVT

M. RAMM¹, M. RUDINSKY¹, A. KULIK¹, M. BOGDANOV¹¹ STR Group, Inc. – Soft-Impact, Ltd.

Tu-P-05 | LIM Minwho

Process-based Modeling of 4H-SiC Double-trench MOSFETs with Reshaped Trench Geometries

M. LIM¹, O. RUSCH¹, T. ERLBACHER¹, S. BEUER¹, M. ROMMEL¹, A. BAUER¹, S. KIM², M. KANG²,
H. RO², H. SHIN²¹ Fraunhofer Institute for Integrated Systems and Device Technology IISB
² Pohang University of Science and Technology (POSTECH)

Tu-P-06 | WOERLE Judith

Phosphorous and Aluminum implantation for MOSFET manufacturing: Revisiting implantation dose rate and subsequent surface morphology

J. WOERLE¹, M. BELANCHE¹, M. NEGRI², C. LAMONTAGNE³, R. NIPOTI⁴¹ Advanced Power Semiconductor Laboratory, ETH Zurich, Switzerland² Axcelis Technologies Srl, Agrate Brianza, Italy³ Axcelis Technologies Inc., Beverly, MA, US
4
CNR-IMM, Italy

Tu-P-07 | MURAKAMI Eiichi

Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs

E. MURAKAMI¹, T. TAKEDSHITA¹, K. ODA¹
¹ Kyushu Sangyo University

Tu-P-08 | LEBEDEV Alexander

Effect of electron irradiation temperature on radiation resistance of SiC.

A. LEBEDEV¹, V. KOZLOVSKI², K. DAVYDOVSKAYA¹, M. LEVINSTEIN¹, A. IVANOV³, G.
OGANESYAN¹¹ Ioffe Institute, St.-Petersburg, Russia² Peter the Great St.Petersburg Politecnical Universuty³ Submicron Heterostructures for Microelectronics Research and Engineering Center of RAS
12

POSTERS

tuesday 26 oct

Tu-P-09 | LEBEDEV Alexander

Effect of high energy (0.9 MeV) electron irradiation on high voltage 4H-SiC MOSFETs

A. LEBEDEV¹, L. FURSIN², V. KOZLOVSKI³, M. LEVINSHTEIN¹, A. STREL’CHUK¹, A. IVANOV⁴, A.
ZUBOV⁵¹ Ioffe Institute, Russia² United Silicon Carbide, Inc., USA³ Department of Experimental Physics, St. Petersburg State Polytechnic University, Russia
4
Submicron Heterostructures for Microelectronics Research and Engineering Center of RAS, Russia
5
National Research University of Information Technologies, Mechanics and Optics, Russia

Tu-P-10 | PRISTAVU Gheorghe

Forward electrical behavior of SiC-Schottky diodes at deep cryogenic temperatures

G. PRISTAVU¹, G. BREZEANU¹, R. PASCU², D. ONEATA¹, F. DRAGHICI¹, F.G. DELLA CORTE³, S.
RASCUNA4¹ University “Politehnica” of Bucharest² National Institute for R&D in Microtechnologies³ Università degli Studi di Napoli Federico II
4
STMicroelectronics

Tu-P-11 | STREL’CHUK Anatoly

Current-voltage characteristics of Cr-SiC (4H) Schottky diodes

A. STREL’CHUK¹, E. KALININA ¹¹ Ioffe Institute, Russia

Tu-P-12 | AMMAR Ali

High Voltage 4H-SiC NPN Bipolar Junction Transistor with Optimized Junction Termination
Extension

A. AMMAR¹, L.V. PHUNG, D. PLANSON, H. MOREL, C. SONNEVILLE¹ Ampere Laboratory / INSA Lyon / CNRS

Tu-P-13 | LEHMEYER Johannes

Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques

J. LEHMEYER¹, M. KRIEGER¹, T. CITAK¹¹ Lehrstuhl für Angewandte Physik, Department Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Germany

Tu-P-14 | MCPHERSON Joseph

Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from
Heavy Ion Bombardment

J. MCPHERSON¹, A. WOODWORTH², T.P. CHOW¹, W. JI¹¹ Rensselaer Polytechnic Institute² NASA Glenn Research Center

Tu-P-15 | MATACENA Ilaria

SiC MOSFET C-V characteristics with (positive) biased Drain

I. MATACENA¹, L. MARESCA, M. RICCIO², A. IRACE², G. BREGLIO², S. DALIENTO², A. CASTELLAZZI³¹ University of Naples Federico II Napoli, Italy² Università degli Studi di Napoli Federico II³ Kyoto University of Advanced Science

Tu-P-16 | WALTL Michael

Performance Analysis of 4H-SiC CMOS Inverter Circuits employing Physical Charge Trapping Models

M. WALTL¹, Y. HERNANDEZ¹, C. SCHLEICH¹, H. REISINGER², B. STAMPFER¹, T. GRASSER¹¹ Institute for Microelectronics, TU Wien, Vienna, Austria² Infineon Technologies AG, Neubiberg, German

13

POSTERS

tuesday 26 oct

Tu-P-17 | DONATO Nazareno

On the Short Circuit electro-thermal failure of 1.2 kV 4H-SiC MOSFETs with 3D cell layouts

N. DONATO¹, K. NAYDENOV¹, F. UDREA¹, A. MIHAILA², G. ROMANO², S. WIRTHS², L. KNOLL²¹ University of Cambridge² Hitachi ABB Power Grids

Tu-P-18 | NAYDENOV Kaloyan

Clamped and unclamped inductive switching of 3.3kV 4H-SiC MOSFETs with 3D cellularlayouts

K. NAYDENOV¹, N. DONATO¹, F. UDREA¹, A. MIHAILA², G. ROMANO², S. WIRTHS², L. KNOLL²¹ University of Cambridge² Hitachi ABB Power Grids

Tu-P-19 | LODHA Surabhi

Electrical Characteristics of 4H-SiC MPS Diodes with Different Schottky/PN Area Ratio

S. LODHA¹, Z. YU¹, M. MAZZILLO¹, S. HABENICHT¹, J. URRESTI¹, J. STACHE ¹, W. SCHNITT¹¹ Nexperia GMBH

Tu-P-21 | FOERTHNER Julietta

Optimization of photon collection efficiency from single silicon vacancy-center in 4H Silicon Carbide through lens structures

J. FOERTHNER¹, M. ROMMEL¹, C. GOBERT¹, S. BEUER¹, P. BERWIAN¹, R. NAGY¹¹ Fraunhofer Institute for Integrated Systems and Device Technology IISB

Tu-P-22 | FISICARO Giuseppe

Kinetics of surface instabilities and extended defects during the epitaxial growth of cubic
silicon carbide

G. FISICARO¹, I. DERETZIS¹, G. CALOGERO¹, C. BONGIORNO¹, M. ZIMBONE¹, M. KOLLMUSS²,
P. WELLMANN², M. ZIELINSKI³, S. SCALESE¹, F. GIANNAZZO¹, F. ROCCAFORTE¹, F. LA VIA¹, A.
LA MAGNA¹¹ Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (CNR-IMM), Italy² Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nürnberg, Germany³ NOVASiC, Savoie Technolac, France

Tu-P-24 | CSóRé András

On the origin of anomalous electron spin resonance for vanadium defects in SiC

CSóRé András¹ Department of Atomic Physics, Budapest University of Technology and Economics² Wigner Research Centre for Physics

Tu-P-25 | FAZIO Tommaso

Theoretical/computational study of point defects in SiC and perspectives for Quantum
Technologies
T. FAZIO¹, A. LA MAGNA², E. PALADINO³, I. DERETZIS², G. FISICARO²¹ University of Catania and CNR-IMM, Italy² CNR-IMM, Italy³ University of Catania and INFN, Italy

Tu-P-26 | NISHIHARA Yoshitaka

Evaluation of Defects in a SiC Substrate using the Photoluminescence Measurement Method

Y. NISHIHARA¹, K. KAMEI¹, K. MOMOSE¹, H. OSAWA¹¹ SHOWA DENKO K.K.

Tu-P-27 | HAN Lei

Injected photon density dependence of the surface recombination velocity for 4H-SiC

L. HAN¹, T. KATO², M. KATO¹
14¹ NITech² National Institute of Advanced Industrial Science and Technology (AIST)POSTERS

tuesday 26 oct

Tu-P-28 | KATO Masashi

Injected photon density dependence of the surface recombination velocity for 4H-SiC

M. KATO¹, L. HAN¹, T. KATO²¹ Nagoya Institute of Technology² National Institute of Advanced Industrial Science and Technology (AIST)

Tu-P-29 | MELI Alessandro

Spectroscopical characterization of 4H-SiC thick epilayer for detection applications

A. MELI¹, A. MUOIO ¹, R. REITANO², A. TROTTA ³, L. MEDA 4, M. PARISI ³, F. LA VIA¹
¹ CNR-IMM, Italy² University of Catania, Italy³ ENI-MAFE, Italy
4
ENI-Renewable Energy, Magnetic Fusion and Material Science Research Center, Italy

Tu-P-30 | SCUDERI Viviana

4H- and 6H-like stacking faults in 3C-SiC cross-section epilayer. Characterization byroom-temperature ?-photoluminescence and ?-Raman analysis.

V. SCUDERI¹, R. ANZALONE ², C. CALABRETTA¹, M. MAUCERI³, F. LA VIA¹
¹ CNR-IMM, Italy² STMicroelectronics, Italy³ LPE, Italy

Tu-P-31 | SOUKHOJAK Andrey

Measurement of dislocation density in SiC wafers using production XRT

A. SOUKHOJAK¹, T. STANNDARD¹, I. MANNING¹, C. LEE¹, G. CHUNG¹, M. GAVE¹, E. SANCHEZ¹¹ SK Siltron CSS

Tu-P-32 | CANNIZZARO Annalisa

Dynamics of grain boundary in 3C-SiC grown on compliance substrates

A. CANNIZZARO¹, M. ZIELINSKI², F. LA VIA¹, S. BONINELLI¹¹ CNR-IMM, Italy² NOVASiC, Savoie Technolac, France

Tu-P-33 | KALLINGER Birgit

Doping-related photoluminescence spectroscopy

B. KALLINGER¹, H. SCHLICHTING¹, M. KOCHER¹, M. ROMMEL¹, P. BERWIAN¹¹ Fraunhofer Institute for Integrated Systems and Device Technology IISB

Tu-P-34 | EL HAGEALI Sami

Multi-scale luminescence investigation of defects in 4H-SiC epilayers

S. EL HAGEALI¹, H. GUTHREY¹, S. JOHNSTON¹, M. AL-JASSIM¹, B. GORMAN²¹ NREL² Colorado School of Mines

Tu-P-35 | CHENG Qianyu

Dislocation Contrast Analysis on PVT-grown 4H-SiC through Synchrotron Grazing-incidence
X-Ray Topogarphs and Ray-Tracing Simulation with Consideration of Surface Relaxation
and X-Ray Absorption

Q. CHENG¹, T. AILIHUMAER¹, H. PENG¹, Y. LIU¹, Z. CHEN¹, S. HU¹, B. RAGHOTHAMACHAR¹, M.
DUDLEY¹¹ Stony Brook University

Tu-P-36 | CHEN Zeyu

Synchrotron Rocking Curve X-ray Topography characterization of high energy implanted
4H-SiC lattice damage
Z. CHEN¹, Y. LIU¹, H. PENG¹, Q. CHENG¹, S. HU¹, B. RAGHOTHAMACHAR¹, M. DUDLEY¹¹ Stony Brook University
15

POSTERS

tuesday 26 oct

Tu-P-37 | GOBERT Christian

Writing structures in 4H-SiC and diamond for quantum technological applications withnanometer precision using a He/Ne ion microscope

C. GOBERT¹, F. VOLLNHALS², P. GNAUCK³, F. PéREZ-WILLARD³, B. KALLINGER¹,
J. FOERTHNER¹, P. BERWIAN¹, M. ROMMEL¹, X. VIDAL⁴, R. NAGY⁵, S.H. CHRISTIANSEN⁶¹ Fraunhofer Institute for Integrated Systems and Device Technology IISB ² Institute for Nanotechnology
and Correlative Microscopy, INAM gGmbH ³ Carl Zeiss Microscopy GmbH 4 Fraunhofer Institute for Applied Solid State Physics IAF 5 Chair of Electron Devices, University of Erlangen-Nuremberg 6 Institute for
Nanotechnology and Correlative Microscopy, INAM gGmbH; Fraunhofer Institute for Ceramic Technologies and Systems IKTS

Tu-P-38 | MUOIO ANNAMARIA

Automatic image analysis of stackingfault

A. MUOIO¹, V. SCUDERI¹, C. CALABRETTA¹, M. ZIMBONE¹, F. LA VIA¹
¹ CNR-IMM, Italy

Tu-P-39 | ZIKO Mehadi Hasan

Comparative Electrical Properties Study of Al-Foil/p- and n-Type 4H/6H-SiC Schottky Barrier
Diode Fabricated Using Diffusion Welded Bonding

M.H. ZIKO¹, A. KOEL¹, T. RANG¹¹ Tallinn University of Technology

Tu-P-40 | LA VIA Francesco

Residual stress measurement by Raman on surface-micromachined monocrystalline 3C-SiC
on silicon

F. LA VIA¹, L. BELSITO¹, M. FERRI¹, S. SAPIENZA¹, A. RONCAGLIA¹, M. ZIELINSKI², V. SCIDERI¹¹ CNR-IMM, Italy ² NOVASiC, Savoie Technolac, France

Tu-P-41 | PINAULT-THAURY Marie-Amandine

Nitrogen investigation by SIMS in two wide band gap semiconductors: Diamond and Silicon
CarbideM. PINAULT-THAURY¹, F. JOMARD¹¹ GEMaC - CNRS / Université de Versailles

Tu-P-42 | SATO Yuta

Self-turn-on Phenomenon of SiC MOSFETs by Fast Switching Operation

Y. SATO¹¹ Nakata Syuuhei

Tu-P-43 | DOBROWOLSKI Artur

Determining the number of graphene layers based on Raman response of the SiC substrate

A. DOBROWOLSKI¹, J. JAGIELLO¹, D. CZOLAK¹, T. CIUK¹¹ Lukasiewicz Research Network – Institute of Microelectronics and Photonics

Tu-P-44 | FUKUNAGA Shuhei

Identification of High Resolution Transient Thermal Network Model for Power Module
Packages
S. FUKUNAGA¹, T. FUNAKI¹¹ Osaka University

Tu-P-45 | ABED ALI Fatme

Design of an integrated power module for Silicon Carbide MOSFET with self-compensationof the magnetic field

F. ABED ALI¹, H. ALAWIEH², P. LEFRANC³, P. JEANNIN³, Y. AVENAS³, T. YOUSSEF⁴, H. MOUSSA²¹ Institut Vedecom  / G2Elab ² Institut vedecom ³ G2Elab  ⁴ Institut Vedecom / Safran Tech

16

POSTERS

tuesday 26 oct

Tu-P-46 | LIU Yafei

Synchrotron X-Ray Rocking Curve Topography Characterization of Power Electronic GaN
Materials

Y. LIU¹, H. PENG¹, Z. CHEN¹, Q. CHENG¹, S. HU¹, B. RAGHOTHAMACHAR¹, M. DUDLEY¹¹ Stony Brook University

Tu-P-47 | HU Shanshan

Characterization of Prismatic Slip in AlN Crystals Grown by PVT

S. HU, Y. LIU¹, H. PENG¹, Q. CHENG¹, Z. CHEN¹, B. RAGHOTHAMACHAR¹, M. DUDLEY¹¹ Stony Brook University

Tu-P-48 | LAZAR Mihai

Enhanced Resonant Raman scattering of GaN functional layers using Al thin films - a versatile tool for multilayer structure analysis

M. LAZAR¹, A. MURAVITSKAYA¹, A. RUMYANTSEVA¹, A.J.E. NDOHI², C. SONNEVILLE², D. PLANSON², P. ADAM¹, S. POTIRON³¹ Laboratory Light, Nanomaterials & Nanotechnologies, CNRS ERL 7004, University of Technology ofTroyes, France ² AMPERE, UMR 5005 CNRS, INSA Lyon, France ³ Laboratoire de Recherche en Nanosciences, Université de Reims Champagne Ardenne, France

Tu-P-49 | ZHOU Ziwei

Raman characterization of Carbon cluster in the interface of 4H-SiC Power Devices by different Annealing method

Z. ZHOU¹¹ Shenzhen BASiC semiconductor Ltd.

Tu-P-50 | VIDARSSON Arnar

Observation of fast near-interface traps in 4H-SiC MOS capacitors using capacitance voltage analysis at cryogenic temperatures

VIDARSSON Arnar¹ University of Iceland  ² Griffith University

Tu-P-51 | RENZ Arne Benjamin

The improved reliability performance of post-deposition annealed ALD-SiO2

A.B. RENZ¹, P.M. GAMMON¹, O.J. VAVASOUR¹, F. LI¹, T. DAI¹, G.W.C. BAKER¹, N. GRANT¹, J.D.
MURPHY¹, P.A. MAWBY¹, V.A. SHAH¹¹ University of Warwick, School of Engineering

Tu-P: Tuesday – Processing

Tu-P-52 | FROMMELT SebastianGraphite-based solutions for SiC PVT furnaces and SiC epitaxy reactors

S. FROMMELT¹, T. FINK¹, T. TAETZ¹, C. WIJAYAWARDHANA¹¹ SGL Carbon GmbH

Tu-P-53 | KASHIMURA Tomoyuki

The fundamental study of liquid phase epitaxy of SiC using Gibbs-Thomson effect of SiC
particles in Si-Cr solvents

T. KASHIMURA¹, T. YOSHIKAWA¹, S. YAMAGUCHI¹¹ Institute of Industrial Science, The University of Tokyo

Tu-P-54 | AOKI Hideto

Step structures of 4H-SiC (000-1) in Si and Si-40mol%Cr solvents at 1873 K after interface
reconstruction

H. AOKI¹, S. KAWANISHI², T. MITANI³, D. CHAUSSENDE⁴¹ Institute of Industrial Science, The University of Tokyo ² Institute of Multidisciplinary Research
for Advanced Materials, Tohoku University, Japan ³ National Institute of Advanced Industrial
Science and Technology, Japan ⁴ University Grenoble Alpes, CNRS, Grenoble INP (Institute of17

Engineering), SIMAP, France

POSTERS

tuesday 26 oct

Tu-P-55 | CRIPPA Danilo

Opening through 8-inch silicon carbide epitaxy

D. CRIPPA¹, M. MAUCERI¹, S. PRETI¹, M. AZADMAND¹, C. VECCHIO¹, M. PUGLISI¹, G. CIVIDINI¹¹ LPE, Italy

Tu-P-56 | KAWANISHI Sakiko

SiC solution growth using SiC/graphite gradient crucible

S. KAWANISHI¹, H. SHIBATA¹¹ Tohoku University

Tu-P-58 | SHIBAGAKI Masami

The novel technology of carbon sputtering cap and Ar sealed EBAS (Electron Bombardment
Annealing System) annealing for extremely smooth surface morphology of 4H-SiC (0001)

M. SHIBAGAKI¹, Y. HARI¹¹ Canon ANELVA Corporation

Tu-P-59 | PEZOLDT Joerg

Silicon Carbide - Graphene nano-gratings on 4H and 6H semi-insulating SiC

J. PEZOLDT¹, S. MATHEW¹, S.P. LEBEDEV², A.A. LEBEDEV², B. HäHNLEIN³, J. STAUFFENBERG⁴,
E. MANSKE⁴, J. KRöGER⁵¹ FG Nanotechnologie, TU Ilmenau, Germany ² Ioffe Institute, St.-Petersburg, Russia ³ FG Technische
Physik I, TU Ilmenau, Germany ⁴ FG Fertigungs- und Präzisionsmesstechnik, TU Ilmenau. Ilmenau,
Germany ⁵ FG Experimentalphysik I, TU Ilmenau, Germany

Tu-P-60 | YU Sean

Highest Quality and Repeatability for Single Wafer 150mm SiC CMP designed for High Volume Manufacturing

S. YU¹, M. LIU¹, J. GIVENS¹¹ Applied Materials

Tu-P-61 | MAY Alexander

Via size-dependent properties of TiAl ohmic contacts on 4H-SiC

A. MAY¹, T. ERLBACHER¹, M. ROMMEL¹¹ Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB

Tu-P-62 | BADALà Paolo

Structural and electrical characterization of Ni-based ohmic contacts on 4H-SiC formed bysolid-state laser annealing

P. BADALà¹, E. SMECCA², S. RASCUNà¹, C. BONGIORNO², E. CARRIA¹, A. BASSI¹,
G. BELLOCCHI¹, C. TRINGALI¹, A. LA MAGNA², A. ALBERTI²¹ STMicroelectronics, Italy ² CNR-IMM, Italy

Tu-P-63 | LA MAGNA Antonino

Multiscale simulations of plasma etching in silicon carbide structures

A. LA MAGNA¹, M. ITALIA¹, I. DERETZIS¹, S. SCALESE¹¹ CNR-IMM, Italy

Tu-P-64 | TAKEUCHI Riku

High-Selective Deep RIE of 4H-SiC with SiO2 Hard Mask in Cl2/HBr/O2 Plasma Chemistry

R. TAKEUCHI¹, T. SATO¹, S. KUROKI¹¹ Research Institute for Nanodevices and Bio Systems, Hiroshima University

Tu-P-65 | KAWAMURA Kazuya

Coverage Enhancement of Si-SOI/4H-SiC Wafer Direct Bonding by SiO2 insertion
K. KAWAMURA¹, T. MEGURO¹, M. TSUTSUMI¹, T. OHSHIMA², Y. TANAKA³, S. KUROKI¹¹ Research Institute for Nanodevice and Bio Systems, Hiroshima University ² National Institutes for
Quantum and Radiological Science and Technology ³ National Institute of Advanced Industrial Scienceand Technology
18

POSTERS

tuesday 26 oct

Tu-P-66 | SUNDARAMOORTHY Vinoth

Ohmic contact formation on 4H-SiC with a low thermal budget by means of Schottky barrier modulation

V. SUNDARAMOORTHY¹, S. WIRTHS¹, L. KNOLL¹¹ Hitachi ABB Power Grids

Tu-P-67 | ROCCAFORTE Fabrizio

Pt Schottky contacts on 3C-SiC layers grown on 4°-off-axis 4H-SiC

F. ROCCAFORTE¹, G. GRECO¹, P. FIORENZA¹, S. DI FRANCO¹, F. GIANNAZZO¹, F. LA VIA ¹,
M. ZIELINSKI², V. JOKUBAVICIUS³, R. YAKIMOVA³¹ CNR-IMM, Italy ² NOVASiC, France ³ IFM, Linköping University, Sweden

Tu-P-68 | MOKHTARZADEH Mahsa

Optimization of Etching Processes for Fabrication of Smooth Silicon Carbide Thin
Membranes for applications in Quantum Technology

M. MOKHTARZADEH¹, R. KOSAK¹, C. DAVID¹¹ Laboratory for Micro and Nanotechnology (LMN), Paul Scherrer Institute, Switzerland

Tu-P-70 | LAZAR Mihai

Ion Implantation Point Defect Engineering in SiC for Photonic Quantum Technology

M. LAZAR¹, M. BROCHETON²¹ Light, nanomaterials, nanotechnologies (L2n) UTT- ERL CNRS 7004 ² Laboratoire de Recherche en
Nanosciences (LRN), Université de Reims Champagne Ardenne, France

Tu-P-71 | YASUDA Yuto

Observation of carrier lifetime distribution in GaN vertical pn diodeY. YASUDA¹, A. TANAKA², H. AMANO², M. KATO¹¹ Nagoya Institute of Technology ² Nagoya University

Tu-P-72 | ANZALONE Ruggero

Impact of dislocation on warpage of thinned 4H-SiC wafers

R. ANZALONE¹, B. CAFRA¹, A. SEVERINO¹¹ STMicroelectronics

Tu-P-73 | FIORENZA Patrick

2D-imaging of the 4H-SiC MOSFET channel by scanning capacitance microscopy

P. FIORENZA¹, M.S. ALESSANDRINO², B. CARBONE², A. RUSSO², F. GIANNAZZO¹,
F. ROCCAFORTE¹¹ CNR-IMM, Italy ² STMicroelectronics, Italy

Tu-P-74 | BERGER Clément

Optimisation of Ti ohmic contacts formed on 4H-SiC by laser annealing

C. BERGER¹, D. ALQUIER¹, J.F. MICHAUD¹¹ GREMAN UMR 7347 - CNRS, Université de Tours

Tu-P-75 | GAY Xavier

A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous
Silicon Carbide Layers Without Edge Exclusion

X. GAY¹, N. BAY¹, F. DELAHAYE¹, S. HANSEN¹, H. KüHNLEIN¹¹ RENA Technologies GmbH

Tu-P-76 | KRUSE Manuel

Total Silicon Carbide solution from wafer making to device making

M. KRUSE¹, G. KLUG¹¹ DISCO HI-TEC EUROPE GmbH

Tu-P-77 | CALVO RUIZ Diego

Novel Vitrified-bond Ultra-fine Grinding Technology for SiC Polishing
19

D. CALVO RUIZ¹, C. SILENO¹¹ Meister Abrasives AG

POSTERS

tuesday 26 oct

Tu-P-78 | GEMMILL William

Advancements in Polishing Pad Technology for the SiC Wafering Process

W. GEMMILL¹, V. MACK¹, T. KNIGHT¹¹ Pureon, Inc.

Tu-P-79 | VIVONA Marilena

Electrical characterization of W-based Schottky barrier on 4H-SiC

M. VIVONA¹, G. BELLOCCHI², G. GRECO¹, S. DI FRANCO¹, M. SAGGIO², S. RASCUNA²,
F. ROCCAFORTE¹¹ CNR-IMM, Italy ² STMicroelectronics, Italy

Tu-P-80 | MOEGGENBORG Kevin

Polish Scratch Simulation vs. Polish Tool TypeK. MOEGGENBORG¹, M. JU¹¹ SK Siltron CSS

Tu-P-81 | MARTINS Maria

Probing the SiO2/SiC interface with nanometer depth resolution using low-energy muons

M. MARTINS¹, J. WOERLE², P. KUMAR², X. NI¹, A. SUTER¹, Z. SALMAN¹, T. PROKSCHA¹,
U. GROSSNER²©Sébastien Andréi¹ Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, Switzerland ² Advanced Power Semiconductor Laboratory, ETH Zurich

20

ORAL
PRESENTATIONS
wednesday
27 oct08:30 / 10:00  AUDITORIUM RONSARD

08:30 / 10:00 AUDITORIUM DESCARTES

We-1A : Advanced Processing

We-1B : MOS Interface

08:30

We-1A-Inv | JENNINGS Mike
MOSFET advanced process technology forheteroepitaxy and bulk 3C-SiC wafers

JENNINGS Mike

Swansea University, Wales, UK

09:00 We-1A-01 | GIANNAZZO Filippo
Electrical scanning probe microscopy investigation of Schottky and metal-oxide junctions on hetero-epitaxial 3C-SiC on Silicon
F. GIANNAZZO¹, P. FIORENZA¹, E. SCHILIRò¹,
C. BONGIORNO¹, S. MONNOYE², H. MANK²,
M. ZIELINSKI², F. LA VIA¹, F. ROCCAFORTE¹¹ CNR-IMM, Italy ² NOVASiC, Savoie Technolac,
France09:20 We-1A-02 | DHAR Sarit
Surface control for next-generation deposited dielectrics in 4H-SiC MOSFETs
S. DHAR¹, I. JAYAWARDHENA¹,
R. RAMAMURTHY², S. DAS¹, L. WANG¹,
R. THORPE³, D. MORISETTE², M. KURODA¹,
L. FELDMAN³¹ Auburn University ² Purdue University ³ Rutgers
University

09:40 We-1A-03 | LEWKE Dirk
Study of laser backside ohmic contact formation of SiC-Ni interface to evaluate theprocess influence on the electrical characteristics
D. LEWKE¹, F. SUPPLIETH², M. VON RINGLEBEN¹, J. RANSOM²¹ 3D-Micromac AG ² X-Fab

10:20 / 12:10 We-2A : Bulk gowth
10:20

08:30 We-1B-01 | KUMAR Piyush
Depth resolved study of the SiO2-SiC interface using low-energy muon spin rotation
spectroscopy
P. KUMAR¹, M. MARTINS², M. BATHEN¹, J.
WOERLE¹, T. PROKSCHA³, U. GROSSNER¹¹ Advanced Power Semiconductor Laboratory,ETH Zurich, Switzerland ² Advanced Power Semiconductor Laboratory, ETH Zurich, Switzerland,Laboratory for Muon Spin Spectroscopy, Paul
Scherrer Institute, PSI, Switzerland ³ Laboratory
for Muon Spin Spectroscopy, Paul Scherrer Institute, PSI, Switzerland

08:50 We-1B-02 | BELANCHE ManuelSensitivity of Dit extraction at the SiO2/SiC
interface using quasi-static capacitance-voltage measurements
M. BELANCHE¹, J. WOERLE¹, P. KUMAR¹, R.
STARK¹, U. GROSSNER¹¹ Advanced Power Semiconductor Laboratory,ETH Zurich

09:10 We-1B-03 | OGATA Yu
Nanoscale evaluation of Al2O3/diamond
MOS interfaces using time-resolved scanning nonlinear dielectric microscopy
Y. OGATA¹, K. YAMASUE¹, X. ZHANG², T. MATSUMOTO², N. TOKUDA², Y. CHO¹
¹ Tohoku University ² Kanazawa University

09:30 We-1B-Inv | KNOLL Lars
Latest advances in the implementation andcharacterization of high-k gate dielectric in
SiC power MOSFETs
KNOLL Lars
Hitachi ABB Powergrids Semiconductor

We-2A-Inv | WELLMAN Peter
Review of Sublimation growth of SiC bulk
crystals

10:20 / 12:00 We-2B : Characterization techniques

WELLMAN

10:20 We-2B-01 | YAMASUE Kohei
Surface potential fluctuations of SiO2/SiC
interfaces investigated by local capacitance-voltage profiling based on time-resolved scanning nonlinear dielectric microscopy

University of Erlangen-Nürnberg

10:50 We-2A-01 | XING Xinming
Structure and morphology evolution of
concave-shaped SiC {0001} surfaces inliquid silicon
X. XING¹, T. YOSHIKAWA², D. CHAUSSENDE¹¹ University Grenoble Alpes, CNRS, Grenoble INP(Institute of Engineering), SIMAP ² Institute ofIndustrial Science, The University of Tokyo

21

ORALwednesday
PRESENTATIONS
27 octYAMASUE Kohei
Tohoku University

ORAL PRESENTATIONS

wednesday 27 oct

AUDITORIUM RONSARD

AUDITORIUM DESCARTES

11:10 We-2A-02 | LIU Xinbo
A solvent design method for SiC solution
growth based on solution property induced
surface stability

10:40 We-2B-02 | PENG Hongyu
Variation of dislocation contrast in synchrotron X-ray topography using narrow rocking
curve width

X. LIU¹, Y. DANG¹, S. HARADA², T. UJIHARA²¹ Department of Materials Processing Engineering² Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and System for
Sustainability (IMaSS)

11:30

We-2A-03 | P
 ARTHASARATHY
SRaghavan
Growth and characterization of low defect,
large diameter and high yielding 4H-N+-SiC
in large volume manufacturing environment

S. PARTHASARATHY¹, R. DRACHEV¹,
B. BERLINER¹, H. CHOU¹¹ GT Advanced Technologies

H. PENG, Z. CHEN, Y. LIU, Q. CHENG,
X. HUANG, B. RAGHOTHAMACHAR,
M. DUDLEY

1Materials Science and Chemical Engineering,
Stony Brook University, Stony Brook, New York,
11794, USA, 2 Advanced Photon Source, Argonne
National Laboratory, Lemont, Illinois, 60439, USA

11:00 We-2B-03 | FUJIMOTO Keiya
Visualization of Transient Internal Temperature Changes during SiC-Schottky Barrier
Diode Operation using Optical-Interference
Contactless Thermometry
K. FUJIMOTO¹, H. HANAFUSA¹, S. TAKUMA¹,
S. HIGASHI¹

11:50¹ Graduate School of Advanced Science and Engineering, Hiroshima University

M. ARZIG¹, P. WELLMANN¹, U. KüNECKE¹

11:20 We-2B-04 | BERCU Nicolas
KPFM - Raman spectroscopy coupledtechnique for the characterization of widebandgap semiconductor devices

We-2A-04 | ARZIG Matthias
Analysis of the morphology of the growthinterface as a function of the gas phasecomposition during the PVT growth of silicon carbide¹ 1Crystal Growth Lab, Materials Department 6(i-meet), Friedrich-Alexander University of Erlangen-Nürnberg, Germany

13:30 / 15:00 We-3A : Point defects
13:30

We-3A-Inv | SON Nguyen
Identification of deep levels of the carbon
antisite-vacancy defect in 4H-SiC

N. SON¹, Y. OHKOUCHI², H. NAKANE², T.
TRINH¹, T. OHSHIMA³, I. IVANOV¹, M. KATO²¹ Department of Physics, Chemistry and Biology,
Linköping University ² Department of Engineering
Physics, Electronics and Mechanics, Nagoya Institute of Technology ³ National Institutes for Quantum and Radiological Science and Technology

14:00 We-3A-01 | HANAWA Masafumi
Evaluation of band-edge photoluminescence spectrum on N-doped 4H-SiC at hightemperatures
M. HANAWA¹, H. TSUCHIDA¹¹ Central Research Institute of Electric Power
Industry (CRIEPI)

N. BERCU¹, M. LAZAR², O. SIMONETTI¹, P.
ADAM², M. BROUILLARD¹, L. GIRAUDET³¹ Laboratoire de Recherche en Nanoscience (LRN),
Université de Reims Champagne-Ardenne² Lumière, nanomatériaux, nanotechnologies
CNRS ERL 7004 (L2n), ICD, Université Technologique de Troyes

11:40 We-2B-05 | PLANSON Dominique
4H-SiC PiN diode protected by narrow fieldrings investigated by the OBIC method
D. PLANSON¹, C. SONNEVILLE¹,
P. BEVILACQUA¹, L.V. PHUNG¹, B. ASLLANI¹,
D. TOURNIER³, P. BROSSELARD²¹ AMPERE, UMR 5005 CNRS, INSA Lyon, France² Caly Technologies

13:30 / 15:00 We-3B : Implantation
and annealing
13:30 We-3B-01 | MATSUOKA Taiga
Sulfur ion implantation into SiC: Deep anddouble donor
T. MATSUOKA¹, M. KANEKO¹, T. KIMOTO¹¹ Dept. of Electronic Sci. & Eng., Kyoto University

22

ORAL PRESENTATIONS

wednesday 27 oct
AUDITORIUM DESCARTES

AUDITORIUM RONSARD

14:20 We-3A-02 | BATHEN Marianne
Stability, evolution and diffusion of intrinsic
point defects in 4H-SiC
M. BATHEN¹, R. KARSTHOF², M. LINNARSSON³, A. GALECKAS², U. GROSSNER¹,
L. VINES²¹ Advanced Power Semiconductor Laboratory,
Switzerland ² Department of Physics, Universityof Oslo, Norway ³ Department of Applied Physics,
Sweden

14:40 We-3A-03 | TAKAHASHI Katsuya
Impacts of High-Concentration Carrier
Traps on Electrical Characteristics of p-i-n
Diodes on HPSI SiC Substrates
K. TAKAHASHI¹, H. TANAKA², M. KANEKO¹,
T. KIMOTO¹¹ Dept. of Electronic Sci. & Eng., Kyoto University² Osaka University, and Kyoto University

15:30 / 16:50 We-4A : New material aspects
15:30

We-4A-01 | ROUCHIER Séverin
150mm SiC engineered substrates forhigh-voltage power devices

S. ROUCHIER¹, G. GAUDIN¹, J. WIDIEZ²,
F. ALLIBERT¹, E. ROLLAND²,
K. VLADIMIROVA², G. GELINEAU²,
N. TROUTOT², C. NAVONE2, G. BERRE³,
D. BOSCH³, Y.L. LEOW³, A. DUBOUST³,
A. DROUIN¹, J-M BETHOUX¹, R. BOULET¹,
A. CHAPELLE¹, E. CELA¹, G. LAVAITTE¹,
A. BOUVILLE-LALLART¹, L. VIRAVAUX1,
S. BHARGAVA3, S. THOMAS3, I. RADU1,
C. MALEVILLE1, W. SCHWARZENBACH1¹ SOITEC SA ² CEA LETI ³ Applied Materials

15:50 We-4A-02 | RAMAKERS Senja
Atomistic simulations of the polytype stability and defect nucleation mechanisms in
4H-SiC epitaxy
S. RAMAKERS¹, T. ECKL¹, A. MARUSCZYK², T.
HAMMERSCHMIDT³, M. MROVEC³,
R. DRAUTZ³¹ Corporate Sector Research and Advance Engineering, Robert Bosch GmbH., Germany² Bosch Security Systems B.V., The Netherlands³ Interdisciplinary Centre for Advanced Materials
Simulation, Ruhr-Universität Bochum, Germany

23

13:50

We-3B-02 | CALABRETTA Cristiano
Graphite Assisted P and Al implanted 4H-SiC
Laser Annealing

C. CALABRETTA¹, A. PECORA¹, M. AGATI¹, S.
PRIVITERA¹, S. BONINELLI¹, F. LA VIA¹
¹ CNR-IMM, Italy

14:10 We-3B-03 | FUKAYA Shuhei
Deep levels in SiC PiN structure with a p
layer formed by ion implantation or epitaxial growth
S. FUKAYA¹, Y. YONEZAWA², T. KATO²,
M. KATO¹¹ Nagoya Institute of Technology ² National Institute of Advanced Industrial Science and Technology (AIST)

14:30 We-3B-Inv | SADDOW Stephen
The Development of a Monolithic Silicon
Carbide Neural Interface for Long-Term
Human Implantation
SADDOW Stephen

Department of Electrical Engineering, University ofSouth Florida, USA

15:30 / 17:00 We-4B : Devices &Reliability
15:30 We-4B-Inv | AGARWAL Anant
Design strategies for rugged power MOSFETs and reliability challenges
AGARWAL Anant

The Ohio State University

16:00 We-4B-01 | COQ GERMANICUS Rosine
Failure analysis of atmospheric neutron-induced Single Event Burnout of a commercial
SiC MOSFET
R. COQ GERMANICUS¹, K. NISKANEN²,
A. MICHEZ², N. MOULTIF³, W. JOUHA³,
O. LATRY³, J. BOCH², U. LüDERS¹,
A. TOUBOUL¹¹ Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT, UMR6508, Caen, France² Institut d’Electronique et des Systèmes,UMR5214, University of Montpellier, France³ Groupe de Physique des Materiaux, CNRS,
UMR6634, Rouen, France

ORAL PRESENTATIONS

wednesday 27 oct

AUDITORIUM RONSARD
AUDITORIUM RONSARD

AUDITORIUM DESCARTES

16:10 We-4A-03 | DOJIMA Daichi
A novel approach of utilizing mechanically
flexible SiC substrate to grow crack-free AlN
bulk crystal by thermal strain relaxation
functionality

16:20 We-4B-02 | LICHTENWALNER Daniel
Gate bias effects on SiC MOSFET terrestrial-neutron single-event burnout

D. DOJIMA¹, M. MATSUBARA²,
H. MINAMIYAMA², T. KANEKO¹¹ WolfspeedAUDITORIUM DESCARTES¹ Kwansei Gakuin University² Toyo Aluminium K.K.

16:30 We-4A-04 | CAFRA Brunella
Dislocation density impact on mechanicalcharacteristics of 4H-SiC substrates
B. CAFRA¹, N. PILUSO¹, A. GRASSO¹,
A.A. MOON¹, A. SEVERINO¹¹ STMicroelectronics

D. LICHTENWALNER¹, D. GAJEWSKI¹, S. RYU¹,
B. HULL¹, S. ALLEN¹, J. PALMOUR¹

16:40 We-4B-03 | RAFí Joan Marc
Low temperature annealing of electron andneutron irradiation effects on fourquadrant SiC radiation detectors
J.M. RAFí¹, V. DAUDERYS¹, G. PELLEGRINI¹, P.
GODIGNON¹, S. OTERO UGOBONO¹,
G. RIUS¹, G. KRAMBERGER², I. TSUNODA³,
M. YONEOKA³, K. TAKAKURA³¹ Instituto de Microelectrónica de Barcelona(CNM-CSIC) ² Jozef Stefan Institute ³ National Institute of Technology (KOSEN), Kumamoto College

POSTERS
17:00 / 19:00

LEVEL -2

We-P – Devices and applications
We-P-01 | MATHIEU DE VIENNE Cédric

Experimental investigation of a 10 kV-70A switch with six SiC-MOSFETs in a seriesconnection configuration

C. MATHIEU DE VIENNE¹, P. LEFRANC², B. ASLLANI³, P. JEANNIN², B. LEFEBVRE³¹ SuperGrid institute, G2Elab ² G2Elab ³ SuperGrid InstituteWe-P0-3 | HOFFMANN Felix

Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules

F. HOFFMANN¹, N. KAMINSKI¹, S. SCHMITT²¹ University of Bremen ² Semikron Elektronik GmbH&Co. KG

We-P-04 | SHANMUGAM Priyadarshini

A New Approach in the Field of Hydrogen Gas Sensing using MEMS based 3C-SiC-µCs

P. SHANMUGAM¹, L. IGLESIAS², M. PORTAIL³, I. DUFOUR², D. CERTON¹, D. ALQUIER¹,
J.F. MICHAUD¹¹ GREMAN Laboratory UMR-CNRS 7347, University of Tours, France ² IMS Laboratory UMR-CNRS 5218,
University of Bordeaux, France ³ Centre de Recherche sur l’Heteroepitaxie et ses Applications CNRSUPR10, France

We-P-05 | YABU MASAHIRO

Investigation of interaction between threading screw dislocations and the growing crystal
surface during PVT-growth of 4H-SiC crystals

M. YABU¹, M. NAKANO¹, M. YODO¹, T. HASHIGUCHI¹, N. OHTANI¹¹ Kwansei Gakuin University, School of Science and Technology
24

POSTERS

wednesday 27 oct

We-P-06 | NAKATA Shuhei

Self-turn-on Phenomenon of SiC MOSFETs by Fast Switching Operation

S. NAKATA¹, Y. SATO¹¹ Kanazawa Institute of Technology

We-P-07 | ZHANG Luyang

Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics
Properties and Gate Design

L. ZHANG¹, T. DAI¹, P. GAMMON¹, J. GONZALEZ1, A. RENZ1, V. SHAH1, P. MAWBY¹¹ University of Warwick

We-P-08 | SHIMA Takuma

Effects of MOS charges on roll-off characteristics of 4H-SiC short channel n/p MOSFETs

T. SHIMA¹, T. MAEDA², S. ISHIKAWA², S. KUROKI¹¹ Research Institute for Nanodevice and Biosystems, Hiroshima University² Phenitec Semiconductor Co., Ltd

We-P-09 | HITCHCOCK Collin

Aluminum Acceptor Ionization Energies in 4H SiC for Low Dose, Ultra-High Energy (> 1MeV)
Implants

C. HITCHCOCK¹, R. GHANDI¹, P. DEEB¹, S. KENNERLY¹, M. TORKY², T.P. CHOW²¹ GE Research ² Rensselaer Polytechnic InstituteWe-P-10 | MOHAMED Torky

Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices

T. MOHAMED¹, P. CHOW¹¹ Rensselaer Polytechnic InstituteWe-P-11 | MUOIO Annamaria

Neutron detection study through simulations with FLUKA
A. MUOIO¹, M. LAURA², M. ALESSANDRO³, P. MIRIAM⁴, T. ANTONIO ⁴, L.V. FRANCESCO⁵¹ CNR-IMM, Italy ² ENI - Renewable Energy, Magnetic Fusion and Material Science Research Center,
Novara ³ IMM-CNR; Università di Catania Dipartimento di Fisica, Catania ⁴ ENI-MAFE, Venezia
⁵ IMM - CNR; LNS - INFN, Catania

We-P-12 | VALERO Valentin

Comparison of the response of SiC-based detectors for fast neutron measurements atmonoenergetic neutron fields

V. VALERO¹, L. OTTAVIANI¹, Q. POTIRON², A. LYOUSSI³, C. DESTOUCHES³, M. HOURY²,
R. BABUT⁴, V. GRESSIER⁴, B. CHEYMOL⁵, A. VOLTE¹, M. CARETTE¹, C. REYNARD-CARETTE¹¹ Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, France ² CEA, IRFM, France ³ CEA/DES/IRESNE/DER,
Section of Experimental Physics, Safety Tests and Instrumentation, France ⁴ IRSN, France
⁵ Laboratoire de Physique Subatomique et de Cosmologie, Université Grenoble-Alpes, CNRS/IN2P3, France

We-P-13 | MENDY Simon

Electrothermal Modelling and Measurements of Parallel-Connected VTH Mismatched SiC
MOSFETs under Inductive Load Switching

S. MENDY¹, R. WU¹, J.O. GONZALEZ¹, O. ALATISE¹¹ University of Warwick

We-P-14 | TORKY Mohamed

Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC
High-Voltage Power MOSFETs

M. TORKY¹, P. CHOW¹¹ Rensselear Polytechnic Institute

25

POSTERS

wednesday 27 oct

We-P-15 | STEFANAKIS Dionysios

Determining 4H-SiC carrier lifetime values for temperature range 300K to 865K via TCAD
simulation

D. STEFANAKIS¹, N. MAKRIS², K. ZEKENTES², D. TASSIS ³¹ ARISTOTLE UNIVERSITY OF THESSALONIKI ² Foundation for Research & Technology-Hellas (FORTH)³ Aristotle University of Thessaloniki

We-P-16 | MAEDA Noriyuki

SPICE model reproducing the static and dynamic characteristics of a SiC complementary
JFET inverter from 300 to 573 K

N. MAEDA¹, M. KANEKO¹, H. TANAKA², T. KIMOTO¹¹ Kyoto University ² Kyoto University, Osaka University

We-P-17 | PASCU Razvan

Differential hydrogen sensor based on SiC MOS capacitors

R. PASCU¹, G. BREZEANU², G. PRISTAVU², F. DRAGHICI²¹ National Institute for Research and Development in Microtechnologies - IMT Bucharest andUniversity “POLITEHNICA” Bucharest ² University “POLITEHNICA” Bucharest

We-P-18 | TIAN Xiaoli

Design and Characterization of 10kV High Voltage 4H-SiC P-channel IGBTs with Low VF

X. TIAN¹, Y. YANG², W. FENG², J. LU¹, C. ZHENG³, C. YANG¹, Y. BAI¹, C. LI³, X. LIU¹

¹ Institute of Microelectronics of Chinese Academy of Sciences ² College of Microelectronics,
University of Chinese Academy of Sciences ³ CRRC Times Electric Co. Ltd

We-P-19 | SCHARNHOLZ Sigo

Investigation of SiC thyristors with varying amplifying gate design

S. SCHARNHOLZ¹, R. HASSDORF¹, D. BAUERSFELD¹, B. VERGNE¹, L. PHUNG², D. PLANSON²¹ ISL AMPERE, UMR 5005 CNRS, INSA Lyon, France

We-P-20 | KALININA Evgenia

4H-SiC photodetectors irradiated with Argon ions

E. KALININA¹, A. LEBEDEV¹, M. KUDOYAROV¹, I. NIKITINA¹, E. DEMENTYEVA¹, V. ZABRODSKII¹¹ Ioffe Institute, St.-Petersburg, Russia

We-P-22 | OTERO UGOBONO Sofía

Monolithic integration of graphene in SiC radiation sensors for harsh-environment
applications

S. OTERO UGOBONO¹, P. GODIGNON¹, G. PELLEGRINI¹, J.M. RAFI¹, G. RIUS¹,
M.d.C. JIMENEZ-RAMOS², J. GARCIA LOPEZ², A. GARCIA-OSUNA²¹ IMB-CNM-CSIC ² Centro Nacional de Aceleradores (U. Seville, CSIC, J. de Andalucia)

We-P-23 | BAKER Guy

A study of 4H-SiC semi-superjunction rectifiers for practical realisation

G. BAKER¹, T. DAI¹, L. ZHANG¹, Y. QI¹, F. LI¹, V. SHAH¹, P. MAWBY¹, M. ANTONIOU¹,
P. GAMMON¹¹ University of Warwick

We-P-24 | KARKER Olfa

Modeling and development of 4H-SiC nanowire/nanoribbon biosensing FET structures

O. KARKER¹, K. ZEKENTES², V. STAMBOULI ³, E. BANO⁴¹ IMEP-LaHC & LMGP, University Grenoble Alpes, CNRS, France ² MRG-IESL/ FORTH, VassilikaVouton, Greece ³
LMGP, University Grenoble Alpes, CNRS, France ⁴ IMEP-LaHC, University Grenoble Alpes, CNRS, France

26

POSTERS

wednesday 27 oct

We-P-25 | SUNDARAMOORTHY Vinoth

Performance comparison of 6.5 kV SiC PiN diode with 6.5 kV SiC JBS and Si diodes

V. SUNDARAMOORTHY¹, A. MIHAILA¹, L. SPEJO², R. MINAMISAWA², L. KNOLL¹¹ Hitachi ABB Powergrids² Fachhochschule Nordwestschweiz, Switzerland

We-P-26 | RENZ Arne BenjaminA study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of
germanium and vanadium

A.B. RENZ¹, O.J. VAVASOUR¹, M. ROMMEL², G.W.C. BAKER¹, P.M. GAMMON ¹, T. DAI¹,
M. ANTONIOU¹, P. MAWBY¹, F. LI¹¹ University of Warwick ² Fraunhofer Institute for Integrated Systems and Device Technology IISB

We-P-27 | CORDIER Yvon

AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/ Si(111) for RF
applications

Y. CORDIER¹¹ CRHEA-CNRS

We-P-28 | CUONG Vuong Van

High-Temperature Reliability of Integrated Electronic Circuit Based on 4H-SiC MOSFET withTiN Metal Gate

V.V. CUONG¹, M. TETSUYA¹, K. SHIN-ICHIRO¹¹ Research Institute for Nanodevice and Bio Systems, Hiroshima University

We-P-29 | MEGURO Tatsuya

Output Characteristics of SOI-Si/4H-SiC Hybrid Pixel Device for Radiation Hardend CMOS
Image Sensors

T. MEGURO¹, M. TSUTSUMI¹, A. TAKEYAMA², T. OHSHIMA², Y. TANAKA³, S. KUROKI¹¹ Research Institute for Nanodevice and Bio Systems, Hiroshima University ² National Institutes for
Quantum and Radiological Science and Technology ³ National institute of advanced industrial scienceand technology

We-P-30 | RIM You Seung

Confined magnetic field sputtering-based Nickel films on ultrawide bandgap ?-Ga2O3 for
Schottky barrier modulation and high thermal stability

Y.S. RIM¹, H. KIM¹
¹ Sejong University

We-P-31 | KOTAMRAJU Siva

Analysis of interface trap distribution for Pd/AlN/6H-SiC and Pd/HfO2/6H-SiC MOS
capacitor sensors at 700K

S. KOTAMRAJU¹, P. VUDUMULA¹¹ IIIT sricity

We-P-32 | BERA Lakshmi Kanta

Multi-layer high-K gate stack materials for low Dit 4H-SiC based MOSFETs

L.K. BERA¹, N. SINGH¹, Z. CHEN¹, C.H.M. CHUA¹, K.J. CHUI¹, R.P. SINGH¹, K.M. HAN¹,
K. CHONG¹, D. KWONG¹¹ Institute of Microelectronics (IME) - A*STAR, Singapore

17:00 / 19:00

We-P – Materials

We-P-33 | K. Mochizuki

Models for impurity incorporation during vapor-phase epitaxy

K. Mochizuki

Hosei University
27

POSTERS

wednesday 27 oct

We-P-34 | KIM Tae Hee

4-inch Si-SiC Single Crystals Grown using high purity β-SiC powder

T.H. KIM¹, G.D. LEE¹, C.Y. LEE¹
¹ KC industrial

We-P-35 | KIM Tae Hee

4-inch N-type SiC Single Crystals Grown using high purity β-SiC powder

T.H. KIM¹, G.D. LEE¹, C.Y. LEE¹
¹ KC industrial

We-P-36 | LEE Chae young

2-inch Si-SiC Single Crystals Grown using -SiC and -SiC powder mixed source

C.y. LEE¹, T.h. KIM¹, G.D. LEE¹, W.J. LEE²
¹ KC industrial ² dong-Eui University

We-P-37 | YAMOCHI Tsuyoshi

Stacking fault formation at the interface between the seed and grown crystal of physicalvapor transport-grown 4H-SiC crystals

T. YAMOCHI¹, T. IZAWA¹, N. OHTANI¹¹ Kwansei Gakuin University, School of Science and Technology

We-P-38 | HASHIGUCHI Takato

Enhanced nitrogen incorporation in the <11-20> directions on the (000-1) facet of 4H-SiC
crystalsT. HASHIGUCHI¹, T. OTA¹, N. OHTANI¹¹ Kwansei Gakuin University, School of Science and Technology

We-P-40 | NAKANO Masataka

Investigation of the step structure on the (000-1) facet of physical vapor transport-grown
4H-SiC crystals on an off-axis seed crystal
M. NAKANO¹, M. YABU¹, N. OHTANI¹¹ Kwansei Gakuin University, School of Science and Technology

We-P-41 | MANNING Ian

Advances in 200 mm 4H SiC wafer development and production

I. MANNING¹, K. MOEGGENBORG¹, J. SEARSON¹, M. GAVE¹, A. SOUKHOJAK¹, G. CHUNG¹,
E. SANCHEZ¹¹ SK Siltron CSS

We-P-42 | MANABE MORINO

Investigation of the deflection behavior of threading dislocations in 4H-SiC crystals

M. MANABE¹, A. NAKAI¹, N. OHTANI¹¹ Kwansei Gakuin University, School of Science and Technology

We-P-43 | ZHU Can

6-inch SiC crystal growth by solution method assisted with AI technology

C. ZHU¹, W. YU², K. SUZUKI¹, Y. DANG³, T. FURUSHO¹, S. HARADA¹, M. TAGAWA¹, T. UJIHARA¹¹ Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and System for
Sustainability (IMaSS), Nagoya University ² Institute of Materials and System for Sustainability (IMaSS),
Nagoya University ³ Department of Materials Science and Engineering, Nagoya University

We-P-44 | STEINER Johannes

Applicability of birefringence measurements for the determination of bulk properties ofsilicon carbide wafers

J. STEINER¹, P.J. WELLMANN¹, B.D. NGUYEN², S. SANDFELD², M. RODER³, A. DANILEWSKY³28¹ Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg² Research Center Jülich Institute for Advanced Simulation³ Crystallography, Institute of Earth Sciences, Albert-Ludwigs-University Freiburg

POSTERS

wednesday 27 oct

We-P-45 | PEZOLDT Joerg

Cubic silicon carbide formation using reactive silicon-carbon multilayers

J. PEZOLDT¹, I. GALINO², N. DUBOISKAYA¹, D. SHEKHAWAT¹, J. GUERRA³, M. HOPFELD⁴,
L. HONIG⁴, P. SCHAAF⁴¹ FG Nanotechnologie, TU Ilmenau, Germany ² Saarland University, Chair of Metallic Materials, Campus
C6.3, D-66123 Saarbrücken, Germany ³ Pontificia Universidad Católica del Perú, Departamento deCiencias, Sección Física, Peru ⁴ FG Werkstoffe der Elektrotechnik, TU Ilmenau, Germany

We-P-46 | IHLE Jonas

In-situ monitoring of unintentionally released nitrogen gas in the initial PVT Silicon
Carbide growth process using mass spectrometry

J. IHLE¹, P. WELLMANN¹¹ Crystal Growth Lab, Materials Department 6 (i-meet), University of Erlangen-Nürnberg (FAU)

We-P-47 | KöHLER Johannes

Chemical Vapor Deposition of 3C-SiC on [100] oriented Silicon at low Temperature < 1200°C
for photonic applications

J. KöHLER¹, M. KOLLMUß¹, P. WELLMAN¹, W. FAN2, H. OU2, D. CHAUSSENDE3¹ Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg
2
Department of Photonics Engineering, Technical University of Denmark, Denmark
3
Université Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering), SIMAP, France

We-P-48 | KOLLMUSS ManuelLarge area growth of cubic silicon carbide using closed space PVT by application ofhomoepitaxial seeding

M. KOLLMUSS¹, M. SCHöLER ¹, R. ANZALONE2, M. MAUCERI3, F. LA VIA4, P. WELLMANN¹¹ Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Germany
2
STMicroelectronics, Italy 3 LPE S.P.A., Italy 4 CNR-IMM, Italy

We-P-49 | PORTAIL Marc

Designing SiC based CMUT structures: an original approach and related material issues

M. PORTAIL¹, S. CHENOT¹, R. KHAZAKA², L. NGUYEN¹, D. ALQUIER³, J.F. MICHAUD³¹ CNRS-CRHEA ² ASM ³ GREMAN UMR 7347 - CNRS, Université de Tours

We-P-50 | JOKUBAVICIUS Valdas

Growth of 3C-SiC on 2-inch hexagonal SiC using sublimation epitaxy

V. JOKUBAVICIUS¹, R. YAKIMOVA¹¹ Department of Physics, Chemistry and Biology, Linköping University

We-P-51 | SAZAWA Hiroyuki

3C-SiC with less rotational variants mixing grown on 4H-SiC C-face substrate by CVD

H. SAZAWA¹, H. YAMAGUCHI¹, K. KOJIMA¹, H. YAMAGUCHI¹¹ National Institute of Advanced Industrial Science and Technology, Advanced Power Electronics
Research Center

We-P-52 | RANA Tawhid

Interfacial Dislocation reduction by optimizing process condition in 4H-SiC epitaxy

T. RANA¹, G. CHUNG¹, A. SOUKHOJAK¹, M. JU¹, M. GAVE¹¹ SK Siltron CSS

We-P-53 | GHEZELLOU Misagh

The effect of carbon precursor on the evolution of surface morphology of 4H-SiC epitaxial
layers during the growth

M. GHEZELLOU¹, J. UL HASSAN¹, R. KARHU¹¹ Department of Physics, Chemistry and Biology, Linköping University, Sweden

29

POSTERS

wednesday 27 oct

We-P-54 | ZIELINSKI Marcin

Vanadium incorporation in 3C-SiC epilayers and its consequences for electrical propertiesof 3C-SiC material.

M. ZIELINSKI¹, C. MOISSON¹, M. BUSSEL¹, H. MANK¹, S. MONNOYE¹, M. PORTAIL²,
A. MICHON², Y. CORDIER²¹ NOVASiC ² CRHEA-CNRS

We-P-55 | FAN Wei

Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition
W. FAN¹, J. LENNARTZ¹, P. SCHMIDT-SANE¹, B. KOZAK¹, B. BALLAND¹, A. GALYUKOV², D. FEEZELL³¹ Momentive Technologies ² STR US ³ University of New Mexico

We-P-56 | PARTHASARATHY Shravan Kumar

Environmental effects on the coherence time of VSi color centers in 4H-SiC

S.K. PARTHASARATHY¹, B. KALLINGER¹, P. BERWIAN¹, R. NAGY²¹ Fraunhofer Institute for Integrated Systems and Device Technology IISB
² Friedrich-Alexander University of Erlangen-Nuremberg

We-P-57 | TAIBI Ibrahim

Structural, electronic and optical properties of 6H-SiC and 3C-SiC with the application insolar cell devices

I. TAIBI

Applied Materials laboratory

We-P-58 | MALIKA DIAFI
Study of Zn–Co Alloy Coatings Modified by Nano- TiO2 Particles Incorporation¹ Physic Laboratory of Thin Films and Applications (LPCMA), University of Biskra, Algeria

We-P-59 | GUO Ling
Evaluation of Line-shape Defect in Epitaxial Wafer¹ SHOWA DENKO K.K.

We-P-60 | FUKUI Takuya

Carrier lifetime of 4H-SiC SJ-UMOSFET

T. FUKUI¹, M. KATO¹, T. TAWARA²¹ Nagoya Institute of Technology ² National Institute of Advanced Industrial Science and Technology (AIST)

We-P-61 | ANZALONE Ruggero

High temperature etching for threading dislocation investigation on GaN epi-layer

R. ANZALONE¹, A. SEVERINO¹¹ STMicroelectronics

We-P-62 | LEBEDEV Alexander

Study of 3C SiC films grown by sublimation on 4H-SiC semiinsulated substrates.

A. LEBEDEV¹, V. DAVYDOV¹, I. ELISEEV¹, S. LEBEDEV¹, I. NIKITINA¹, A. SMIRNOV¹¹ Ioffe InstituteWe-P-63 | CHUNG Gil

Decoration and density changes of dislocations in PVT-grown SiC boules with post-growth
thermal processing¹ SK Siltron CSS

We-P-64 | KRANERT ChristianNon-destructive, cost-efficient, and fast full wafer defect quantification for SiC by X-ray
topography

C. KRANERT¹, C. REIMANN¹, R. WEINGäRTNER¹, J. FRIEDRICH¹, M. FEHRENTZ², E. SöRMAN³,
A. ELLISON³
30¹ Fraunhofer Institute for Integrated Systems and Device Technology IISB ² Rigaku Europe SE³ STMicroelectronics Silicon Carbide AB

POSTERS

wednesday 27 oct

We-P-65 | KARHU Robin

Creation of defect centers in 4H-SiC
R. KARHU¹, D. HABERSAT², A. BURK³, B. VANMIL²¹ Oak Ridge Associated Universities (ORAU) ² DEVCOM Army Research Laboratory ³ Fibertek

We-P-66 | CALABRETTA Cristiano

Effect of N and Al doping on Stacking Faults reduction in 3C SiC
C. CALABRETTA¹, R. ANZALONE¹, V. SCUDERI¹, A. CANNIZZARO¹, M. MAUCERI², D. CRIPPA²,
S. BONINELLI¹, F. LA VIA¹
¹ CNR-IMM, Italy ² LPE, Italy

We-P-67 | NA Moonkyong

Stresses effect on the formation of ?-shaped dislocations in 4H-SiC epitaxial layer

M. NA¹, W. BAHNG¹, H. JANG², N.K. KIM¹, J.H. MOON¹, J.H. YOON³, H.D. JUNG³¹ Korea Electrotechnology Research Institute ² Korea Electrotechnology Research Institute/Pusan
National Univeristy ³ Etamax Co., Ltd.

We-P-68 | KODOLITSCH Elisabeth

Impact of epitaxial defects on device behavior and their correlation to electricalcharacteristics in SiC devices

E. KODOLITSCH¹, V. SODAN², M. KRIEGER³, N. TSAVDARIS²¹ Infineon Technologies Austria AG / Friedrich-Alexander University of Erlangen-Nuremberg² Infineon Technologies Austria AG ³ Friedrich-Alexander University of Erlangen-Nuremberg

We-P-69 | HRICH Haitham

From buffer layer to graphene monolayer grown by sublimation on 4H-SiC (0001) large
terraces

H. HRICH¹, M. MORET¹, O. BRIOT¹, M. PAILLET¹, J.M. DECAMS², P. LANDOIS¹, S. CONTRERAS¹¹ Laboratoire Charles Coulomb, UMR 5221, Univ Montpellier, CNRS, Montpellier, France² Annealsys, 139 rue des Walkyries, 34000 Montpellier, France

We-P-70 | JOUSSEAUME Yann

Liquid Si-induced 4H-SiC surface structuring using a sandwich configuration

Y. JOUSSEAUME¹, F. CAUWET¹, G. FERRO¹¹ Laboratoire des Multimatériaux et Interfaces, Université de Lyon

We-P-71 | SCHLICHTING Holger

The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performanceand Reliability

H. SCHLICHTING¹, B. KALLINGER¹, T. ERLBACHER¹, M. KOCHER¹

1 Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystr. 10, 91058 Erlangen, Germany
2 FAU Chair of Electronic Devices, Cauerstr. 6, 91058 Erlangen, Germany

31

ORAL PRESENTATIONS
09:00 / 10:00

thursday 28 oct

AUDITORIUM RONSARD

Th-1A : Harsh Environment, Ics & Sensors
09:00

Th-1A-Inv | ZETTERLING Carl-Mikael
Extreme Environment Electronics using SiC Bipolar Ics

ZETTERLING Carl-Mikael

KTH Royal Institute of Technology

09:30

Th-1A-01 | KANEKO Mitsukai	Suppression of a logic-threshold-voltage shift in a SiC complementary
JFET logic gate at high temperature

M. KANEKO¹, M. NAKAJIMA¹, T. KIMOTO¹¹ Kyoto University

09:50

Th-1A-02 | MEHTA Mohit
DC Modeling of 4H-SiC JFET Gate Length Reduction at 500°C

M. MEHTA¹, P. NEUDECK², J. LAWSON³¹ KBRWyle Services, LLC. (NASA Govt. Contractor)² NASA Glenn Research Center ³ NASA Ames Research Center

10:40 / 11:20

Th-2A : Harsh Environment, Ics & Sensors

10:40

Th-2A-01 | ASLANIDOU Sofia
	Fabrication and Characterization of Epitaxial Graphene Field EffectTransistor Devices based on a Monolithic Bottom Gate

S. ASLANIDOU¹, A. GARCíA-GARCíA², G. RIUS², P. GODIGNON²¹ IMB-CNM-CSIC / UAB ² IMB-CNM CSIC

11:00

Th-2A-02 | KUROKI Shin-Ichiro	Output Characteristics of 4H-SiC Pixel Devices for Radiation Hardened
UV CMOS Image Sensors

	S. KUROKI¹, K. NISHIGAITO¹, T. MEGURO¹, A. TAKEYAMA², T. OHSHIMA²,
Y. TANAKA³¹ Research Institute for Nanodevice and Bio Systems, Hiroshima University² National Institutes for Quantum and Radiological Science and Technology (QST)³ National Institute of Advanced Industrial Science and Technology (AIST)

11:20 / 12:05

Plenary Session 2

11:20
Th-PS-01 | KIMOTO Tsunenobu
	A New Horizon of SiC Technology Driven by Deeper Understanding ofPhysics
Kyoto University

32

12:05 / 12:45

Closing Session

12:05
12:15
12:30
12:40

Conference Award Announcements
Conference Highlights
ICSCRM 2022 : Pr. U. Grossner (ETHZ, Switzerland)
ICSCRM 2023: Pr. A. Irace (U. Napoli, Italy)@

Auditorium Descartes

Auditorium Ronsard

We-1B : MOS Interface

Wed.
Auditorium Descartes

We-1A : Advanced
Processing

Tues.

Tu-1B : MOS Processing

Coffee Break

Auditorium Ronsard
Tu-1A Diodes &Superjunctions

Coffee BreakMon.
Auditorium Ronsard

Plenary session

Coffee BreakThurs.
Auditorium Ronsard

Th-1A : Harsh Environment, Ics & Sensors

LUNCH Break

We-3A : Point defects

LUNCH BreakCoffee Break

We-3B : Implantation andannealing

LUNCH BreakPlenary Session 2
Closing session
LUNCH BREAK

Th-2A : Harsh Environment, Ics & Sensors

Coffee BreakMo-1A : SiC Epitaxy

LUNCH BreakTu-3B : Schottky contacts

Coffee BreakOpening

Coffee BreakCoffee Break
We-2B : Characterization
techniques

Su-1A : Tutorial

LUNCH BREAK

Tu-3A : 3C-SiC

Coffee Break

We-4B : Devices &Reliability

INDUSTRIAL Exhibition
08:00/19:00 @ - 2nd Floor

GALA DINNER at "La Grange de Meslay"(from 19:30)

We-P : POSTER SESSION

Tu-2A : Extended defects Tu-2B : Materials & Defects We-2A : Bulk growth

LUNCH BREAK

Mo-2A : MOSFETs

Coffee Break

We-4A : New material
aspects - G1E - 5342

Tu-P : POSTER SESSION

INDUSTRIAL Exhibition
08:00/19:00 @ - 2nd Floor

INDUSTRIAL Exhibition
08:30/14:00 @ -2 nd Floor

End of the conference at 14:00

Coffee BreakTu-4B : Fundamental
properties

Su-2A : Tutorial

Tu-4A : HV and advanced
devices

BREAK / Badges

INDUSTRIAL SESSION @ - 2nd Floor

INVITED POSTER introduction

Mo-3A : Quantum Technology

Welcome Coffee & Opening

Sun.
Auditorium Descartes

PROGRAM AT A GLANCE
08:30

10:00

12:00

13:30

17:00
18:30
19:30

WELCOME PARTY(from 18:30 @ 2nd Floor)

INDUSTRIAL Exhibition
08:00/19:45 @ - 2nd Floor