The CITIUS detector
Charge Integration Type Imaging Unit with high-Speed
extended-Dynamic-Range
1 Gcps/pixel with 72.6µm pixels (18 Tcps/cm2)
Conceptual Design: 2013-2014
DevelopmentSensor: 2015-2020
Data-Processing FPGA card: 2015-2023
System: 2020This talk: Performance and associated applications.

Takaki Hatsui
RIKEN SPring-8 Center
August 30th, 2024

SRI2024

1

CITIUS: Demonstrated Sensor Performance
SensorPixel Size

72.6 µm square

Frame rate

17.4 kHz

Saturation Countrate

945 Mcps/pixel @ 10 keV
18 Tcps/cm2Sensor

Silicon (650μm thick)VacuumcompliantIntra-module gap

NoneTiling4 sideAugust 30th, 2024

NoiseSRI2024<40 e-rms
0.018 phs rms @8 keV

On-chip ADCs (one ADC/8 pixels)
Digital Output• 140 Gbps/sensor (physical)• 156 Gbps/sensor (information)• bit depth 32 bit (information)• 1.7 PB/day
T. Hatsui
2

XPCS @ 17.4 kfps

Y. Honjo, K. Ozaki, H. Nishino
T. Hoshino (Tohoku Univ.)

BL29XU EH3 in July 2021

40 Mcps/pixel at 8 keV.
Frame Rate: 117.5 kHz with 35 kpixels @1/8 ROI
Double Burst Mode: 10 MHz
CITIUS
Pixel Number: 280 kpixels
Frame rate: 17.4 kframes/s
Frame Cycle: 57.5 μs
Duty ratio: 94 %August 30th, 2024

SRI2024

Sample:Silica (100 nmφ, 28.8 wt%)
in MEK + PEI + MeOH (66.8, 3.9, 0.5 wt%)
in 0.5mm capillary
Slit:
Size: 20 μm □,Position: 1 m upstream of the sample
Incident X-ray beam:
Photon energy: 8 keV,Photon flux: 2E9 photons/s
Geometry:
Camera length: 3.2 m
Image Processing:
Dark image subtracted T. Hatsui, RIKEN 3

M. Grimes et.al., J. Appl. Cryst. 56(4), 2023, pp. 1032-1037.

Bragg CDI at ESRF-EBSCount rate

ResolutionAcquisitionTime

CITIUS

30 Mcps/pixel

20 ± 6 nm

23 s

MARPIX

1 Mcps/pixel

22 ± 9 nm

200 s

A detailed analysis showed CITIUS with 1 ms exposure gives
similar data quality to MARPIX with 1 s exposure.

CITIUS: Demonstrated Sensor PerformanceSensor
Pixel Size

72.6 µm square

Frame rate

17.4 kHz

Saturation Countrate

945 Mcps/pixel @ 10 keV
18 Tcps/cm2Sensor

Silicon (650 μm thick)VacuumcompliantIntra-module gap

NoneTiling4 sideAugust 30th, 2024

NoiseSRI2024<40 e-rms0.018 phs rms @8 keV

On-chip ADCs (one ADC/8 pixels)
Digital Output• 140 Gbps/sensor (physical)• 156 Gbps/sensor (information)• bit depth 32 bit (information)• 1.7 PB/day
T. Hatsui
5Count Rate (1/2)

The most intense pixel : 590
Mcps
Photon Energy: 10keV
Slit to CITIUS: 15m
Slit Size: 20×20μm

August 30th, 2024

SRI2024

Edge of thevacuum pipe

SinglephotonY. Honjo, RIKEN

6

Experimental Data
• 945 Mcps/pixel @ 10 keV• 1.23 Gcps/pixel @ 5 keVCount Rate (2/2)
945 Mcps/pixel18 Tcps/cm2
Saturated Count Rate (Mcps/pixel)

Photon Energy = 10 keV

1000

X100

1 Gcps/pixelx100−10,000

10photon counting [1]1

1 Mcps/pixel[1] Y. Imai and T. Hatsui, J. Synchrotron Rad. 31(2) (2024) 295.
August 30th, 2024

SRI2024

T. Hatsui

7Flange-mounted in-vacuum CITIUS
feasibility study for ptychography

in collab. with Y. Takahashi Groupof Tohoku Univ.

840k

August 30th, 2024

SRI2024

T. Hatsui8Ta Test Chart (NTT-AT) 200 nm thick (phase shift 0.41 rad@6.5keV)
Virtual Source Size： 30 µm×150 µm
Source Intensity： 2.6 x 10^10 photons/s
Exposure Time： 1 second
Max. Intensity at detector: 250 Mcps/pixel

without attenuators
August 30th, 2024

SRI2024

Y. Takahashi et.al., J. Synchrotron Rad. Vol. 30(5) (2023) 989.

Low-Q Region

Low-Q region imaged without attenuators
Higher Resolution & Phase sensitivity

9

CITIUS: Demonstrated Sensor Performance
SensorPixel Size

72.6 µm square

Frame rate

17.4 kHz

Saturation Countrate

945 Mcps/pixel @ 10 keV
18 Tcps/cm2Sensor

Silicon (650 μm thick)VacuumcompliantIntra-module gap

NoneTiling4 sideAugust 30th, 2024

Noise

SRI2024<40 e-rms
0.018 phs rms @8 keV

On-chip ADCs (one ADC/8 pixels)
Digital Output• 140 Gbps/sensor (physical)• 156 Gbps/sensor (information)• bit depth 32 bit (information)• 1.7 PB/day
T. Hatsui
10

Courtesy of Jaemyung Kim & Y. Hayashi (RIKEN)
3D XRD to visualize the metal grains
CITIUS at 37 keV

111

100

August 30th, 2024

SRI202411110

Sensitivity
40 keVNo QE drop
No Al layer
12.4 keV

Low photon energy
limited by noisestandard mode
• S/N > 7 @ 1 keV
multi-sampling• S/N > 7 @ 460 eV
to be confirmed

August 30th, 2024

SRI2024

14.4 keVhigh photon energy
Limited bysilicon thickness of 650µm〜20 % @ 30 keV

T. Hatsui

12Quasi-elastic scattering @ 14.4 keV
Makina Saito et.al., Phys. Rev. Lett. 132, 256901 (2024)

Demands⁃ high sensitivity @ 14.4 keV• 650 µm thick silicon• no corner QE loss
⁃ high speed
CITIUS specifications

Talk at Micro Symposium 12/3, Friday afternoon⁃ 840k, 17.4 kframes/s⁃ 468 Gbps (58.5 GB/s, 5.1 PB/day)On-the-fly edge compression
Data Quality Confirmation• SPring-8 Data Center (360 TFLOPS)

Results⁃ 35 PB/beamtime⁃ compression ratio > 1000

FPGA-accelerated edge computingFPGA⁃⁃⁃

Summation of 2 frames to one
calibration
entropy reduction

CPU⁃

SZIP compression

H. Nishino, et.al., Nucl. Instrum. Methods Phys. Res. A. 1057, 168710 (2023).
T. Hatsui
13

CITIUS: Demonstrated Sensor Performance
SensorPixel Size

72.6 µm square

Frame rate

17.4 kHz

Saturation Countrate

945 Mcps/pixel @ 10 keV18 Tcps/cm2Sensor

Silicon (650 μm thick)VacuumcompliantIntra-module gap

NoneTiling4 sideAugust 30th, 2024

NoiseSRI2024<40 e-rms
0.018 phs rms @8 keV

On-chip ADCs (one ADC/8 pixels)
Digital Output• 140 Gbps/sensor (physical)• 156 Gbps/sensor (information)• bit depth 32 bit (information)• 1.7 PB/day
T. Hatsui
14

CITIUS 20.2M for SACLASALCA: XFEL facility with 60 Hz

Major Specifications
Max. Frame rate: 5 kHz
DAQ for SACLA: 960 Hz in the 16-sampling mode
(1 pulse image is taken by 16 images)
DAQ bandwidth:
620 Gbps @ 32 bit/pixel
107 GB/s
9 PB/day, when operated continouslyFirst Beam Test:
July 2024# of components: 12,586/system
Engineering intensive project
The outcome of a large collaboration.
T. Hatsui15

Mo 40 kV,500 µA, total exposure time 338 ms (6400 frames)

flat field image
August 30th, 2024
SRI2024
dark subtracted

transmitted image
flat field corrected T. Hatsui

16

Enlarged view of the transmitted image
flat field corrected

August 30th, 2024

SRI2024

17

Noise and Energy Resolution

Noise 25 e-rms〜250 eV FWHM

Peak Signal 28 Me(17,000 phs@6 keV)

August 30th, 2024

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18

SFX at SACLA with CITIUS 20.2M
First lightfailure during commissioning

one sensor damaged
by direct beam during experiments
Successful structure determination demonstrated.
The first science experiments were carried out!
19

Laboratory based Spectral CT
V. Di Trapani1,2*, F. De Marco1,2, F. Arfelli1,3, Y. Honjo5, K. Ozaki5, H. Nishino5,6, Y. Joti5,6,T. Hatsui5, F. Orsini5, P. Thibault1,2, R. H. Menk2,3,41) University of Trieste, 2) Elettra Sincrotrone 3) INFN Trieste, 4) Mid Sweden Univ., 5) RIKEN 6) JASRI

presented at iWoRiD 2024
Conventional CT

Spectral decomposed CT(blue Ag, green KBr Gray polyethylene)

Analyzed Spectral Resolution in this experiments.
• 540 eV FWHM @ 5.9 keV, 670 eV FWHM @ 27.3 keV

20

Summary
Pixel Size

72.6 µm square

Frame rate

17.4 kHz

Saturation Countrate

945 Mcps/pixel @ 10 keV
18 Tcps/cm2

SensorSilicon (650 μm thick)VacuumcompliantIntra-module gap

NoneTiling4 sideNoise<40 e-rms
0.018 phs rms @8 keV

117.5 kHz @1/8 ROI, double Burst Mode at 10 MHz
XPCS single-crystal structure analysis
1.23 Gcps/pixel @ 5 keV
Bragg CDI, ptychography

SWAXS
3D XRD (37 keV), Quasi-elastic scattering (14.4 keV)tender X-ray ptychography

20.2Mpixel for XFEL SFX
Serial MX at SR
250-700 eV FWHM (25-40 e-rms)
Spectral decomposed CT
Quick XAFS for battery studies
X-ray BPM for SPring-8-II storage ring
T. Hatsui21

Summary
Performance and Applications• frame rate (> 17.4 kHz) XPCS, single-crystal structure analysis• high-intensity (up to 1 Gcps/pixel) Bragg CDI, ptychography, SWAXS• high sensitivity 3D XRD (37 keV), Quasi-elastic scattering (14.4 keV)
• Tiling 20.2Mpixel for XFEL SFX• Low noise ⇒ Spectro-imaging• 250-700 eV FWHM (25-40 e-rms)• 180 Mevents/sensor (12.2 Mevents/cm2)• Spectral decomposed CT, Fluorescence-Yield Quick XAFS for battery studies, Xray beam monitor for SPring-8-II storage ring

August 30th, 2024

SRI2024

T. Hatsui22

Acknowledgment
RIKEN and JASRI Team⁃ Kyosuke Ozaki, Yoshiaki Honjo, Haruki Nishino, Kazuo Kobayashi, Koji Motomura, KyoNakajima, Yasumasa Joti, T. Kudo, T. Sugimoto, M. Yamaga, T. Kameshima, Y. Inagaki, K.
Fujiwara, T. Nakagawa, Y. Oyaki, M. Kimoto, M. Nakamachi, M. Yabashi, T. Ishikawa

RIKEN R-CCS⁃ S. Matsuoka, K. Sato, K. Sano, F, Shoji and their division members

Private Companies⁃⁃⁃⁃⁃⁃Sony Semiconductor Solutions
GLORY System Create LtdNihon Gijyutu CenterMeisei Electric Co. Ltd.
JEPICO Corporation
Tokyo Electron Device Limited

August 30th, 2024

SRI2024Thank you for your attention.

T. Hatsui23