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22  úËõ Jan. 2012 Vol.25 No.1

Fig. 1

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Fig. 4a) Single crystal of Si used for the positioning. b) View ofthe sample surface from the microscope. The tip of the Si
crystal was cleaved and adjusted to the measurement posi­tion.

(a) Single crystal of Si of 120 mm~100 mm~80 mm in sizefor the ARPES measurement. (b) Schematic of the tape andaluminum tube used for the Laue measurement. (c) Photoof the Laue camera system with the tube. (d) Schematic of
the system for mounting the sample. (e) Camera monitor
showing the sample, where its lower half was embedded in
the electroconductive glue. (f) Sample carrier with the Cu
plate screwed on it.

úËõ Jan. 2012 Vol.25 No.1  25

Fig. 6

Fig. 7(a) Si crystal mounted on the electroconductive glue. (b) Si
crystal observed through a viewport after cleaving.

Fig. 8Intensity map of ARPES spectra measured for the cleaved Si
shown in Fig. 7(b).

Angle­integrated photoemission spectra measured (a) be­fore cleaving and (b) after cleaving.

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26  úËõ Jan. 2012 Vol.25 No.1

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8)

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18) ÒÐî º²jV

àc@lPxõÈw¤Z^[p¤£iåå²¤õE­mail: murospring8.or.jpêåFúËõªõÀ±mªðn
1999Nåãåwåw@îbHw¤ÈmãúÛöC¹Bmiw)B1999
Nàc@lPxõÈw¤Z^[¤õC2007Næè»EB

Angle­resolved photoemission spectroscopy ofsmall samples
Takayuki MURO

Japan Synchrotron Radiation Research Institute
1_1_1 Kouto, Sayo, Hyogo 679_5198, Japan

Abstract The technique of angle­resolved photoemission spectroscopy (ARPES) for samples as small as
100 mm has been developed by using focused soft x­ray synchrotron radiation. An optical microscope is used
to adjust samples to the measurement position. Samples can be cleaved in situ with a microcleaver to obtainclean surfaces. The result of the ARPES measurement for a single crystal of Si of 120 mm~100 mm~80 mm insize is described.

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