2SK3342
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3342
Switching Regulator Applications DC−DC Converter, andMotor Drive Applicationsl Low drain−source ON resistance: RDS (ON) = 0.8 Ω (typ.)l High forward transfer admittance: |Yfs| = 4.5 S (typ.)l Low leakage current: IDSS = 100 µA (max) (VDS = 250 V)l Enhancement−mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

Unit: mm

Maximum Ratings (Ta = 25°C)
Characteristics

SymbolRatingUnit

Drain−source voltage

VDSS250V

Drain−gate voltage (RGS = 20 kΩ)

VDGR

250

V

Gate−source voltage

VGSS

±20V

(Note 1)

ID

4.5

A

Pulse (Note 1)

IDP

18A

Drain power dissipation (Tc = 25°C)

PD

20W

Single pulse avalanche energy(Note 2)

EAS

51mJ

Avalanche current

IAR

4.5

A

Repetitive avalanche energy (Note 3)

EAR

2.0mJ

Channel temperature

Tch

150°C

Storage temperature range

Tstg−55~150°C

Drain current

DCJEDEC―JEITA

SC-64

TOSHIBA

2-7B1B

Weight: 0.36 g (typ.)Thermal Characteristics
Characteristics

SymbolMaxUnitThermal resistance, channel to caseRth (ch−c)6.25°C / W

Thermal resistance, channel toambient

Rth (ch−a)

125°C / W

Note 1: Please use devices on condition that the channel temperature isbelow 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω,
IAR = 4.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.

JEDEC―JEITA―TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)12002-01-25

2SK3342
Electrical Characteristics (Ta = 25°C)
Characteristics

SymbolTest Condition

MinTyp.

MaxUnit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V——±10µA

Drain cut−off current

IDSS

VDS = 250 V, VGS = 0 V——100µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

250

——

V

Drain−source breakdown voltage
Gate threshold voltage

VthVDS = 10 V, ID = 1 mA

1.5

—

3.5

V

Drain−source ON resistanceRDS (ON)

VGS = 10 V, ID = 2.5 A—0.81.0Ω

Forward transfer admittance|Yfs|

VDS = 10 V, ID = 2.5 A

2.04.5—S

Input capacitance

Ciss

—

440

—

Reverse transfer capacitance

Crss—

35

—

Output capacitance

Coss

—

120

—

Rise time

tr—

15—

Turn−on time

ton

—

20

—

VDS = 10 V, VGS = 0 V, f = 1 MHz

pF

ns

Switching time
Fall timetf

—

15

—

Turn−off time

toff

—

60

—

Total gate charge (Gate−source
plus gate−drain)

Qg

—

10—

Gate−source charge

Qgs

—

6—

Gate−drain (“miller”) charge

Qgd

—

4—

VDD ≈ 100 V, VGS = 10 V, ID = 4.5 AnC

Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics

SymbolTest Condition

MinTyp.

Max

Unit

Continuous drain reverse current(Note 1)

IDR

———

4.5

A

Pulse drain reverse current(Note 1)

IDRP

———

18

A

Forward voltage (diode)VDSF

IDR = 4.5 A, VGS = 0 V

—

—

−2.0

V

Reverse recovery timetrr

—

110

—

ns

Reverse recovery charge

Qrr

IDR = 4.5 A, VGS = 0 V
dIDR / dt = 100 A / µs

—0.47—µCMarking2

2002-01-25

2SK3342

RESTRICTIONS ON PRODUCT USE

000707EAA· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physicalstress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards ofsafety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions andconditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life orbodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane orspaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in thisdocument shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or otherrights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.

32002-01-25

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