2SK3562
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3562
Switching Regulator Applications••••

Unit: mmLow drain-source ON resistance: RDS (ON) = 0.9Ω (typ.)High forward transfer admittance: |Yfs| = 5.0S (typ.)Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics

SymbolRating

Unit

Drain-source voltage

VDSS

600V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

600V

Gate-source voltage

VGSS

±30V

(Note 1)ID

6Pulse (t = 1 ms)(Note 1)IDP

24

Drain power dissipation (Tc = 25°C)

PD

40W

Single pulse avalanche energy(Note 2)

EAS

345mJ

Avalanche current

IAR

6A

Repetitive avalanche energy (Note 3)

EAR

4mJ

Channel temperature

Tch

150°C

Storage temperature range

Tstg-55~150°C

DC
Drain current

A
1: Gate2: Drain
3: Source

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)Thermal Characteristics
Characteristics

SymbolMax

Unit

Thermal resistance, channel to caseRth (ch-c)3.125°C/W

Thermal resistance, channel to ambient

Rth (ch-a)62.5°C/W

2

Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 16.8 mH, IAR = 6 A, RG = 25 Ω

1Note 3: Repetitive rating: pulse width limited by maximum channel temperatureThis transistor is an electrostatic-sensitive device. Please handle with caution.
31

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2SK3562
Electrical Characteristics (Ta = 25°C)
Characteristics

SymbolTyp.

MaxUnit±10µA

VGS = ±25 V, VDS = 0 V⎯⎯

V (BR) GSS

IG = ±10 µA, VDS = 0 V±30⎯

⎯VIDSS

VDS = 600 V, VGS = 0 V

⎯⎯

100

µA

V (BR) DSS

ID = 10 mA, VGS = 0 V600⎯⎯

V

Drain cut-off current
Drain-source breakdown voltage

MinIGSS

Gate leakage current
Gate-source breakdown voltage

Test Condition

Vth

VDS = 10 V, ID = 1 mA

2.0

⎯

4.0

V

Drain-source ON resistanceRDS (ON)

VGS = 10 V, ID = 3 A⎯0.91.25Ω

Forward transfer admittance⎪Yfs⎪

VDS = 10 V, ID = 3 A1.25.0⎯

S⎯

1050

⎯

⎯10⎯

⎯

110

⎯

VOUT⎯

20

⎯

RL =66 Ω⎯

40⎯

⎯

35⎯

⎯

130⎯

⎯

28

⎯

⎯

16⎯

⎯

12⎯

Gate threshold voltage

Input capacitance

Ciss

Reverse transfer capacitance

Crss

Output capacitanceCoss

VDS = 25 V, VGS = 0 V, f = 1 MHz

ID = 3 A

10 V
VGS0V

Rise timetrTurn-on time

tonFall timetf

Turn-off time

toff

50 Ω

Switching time

VDD ∼− 200 V
Duty <= 1%, tw = 10 µs

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

QgdVDD ∼− 400 V, VGS = 10 V, ID = 6 A

pF

nsnC

Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics

SymbolTest Condition

MinTyp.

Max

Unit(Note 1)

IDR

⎯

⎯

⎯

6A

(Note 1)

IDRP⎯⎯⎯24A

IDR = 6 A, VGS = 0 V⎯⎯−1.7

VContinuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)

VDSF

Reverse recovery timetrr

IDR = 6 A, VGS = 0 V,

⎯1000

⎯nsQrrdIDR/dt = 100 A/µs

⎯

7.0

⎯µC

Reverse recovery charge

MarkingK3562

Part No. (or abbreviation code)
Lot No.
A line indicateslead (Pb)-free package orlead (Pb)-free finish.

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2SK3562

ID – VDS

ID – VDSCOMMON
SOURCE
Tc = 25°C
PULSE TEST

410154.8

COMMON SOURCE

10,151065

Tc = 25°C
PULSE TEST

5.2

DRAIN CURRENT ID (A)DRAIN CURRENT ID (A)

54.63
4.42
4.2
158

4.8

64.6
4
4.4
4.2

2

VGS = 4 V
002468DRAIN-SOURCE VOLTAGE

VDS

VGS = 4 V
0010(V)

10ID – VGS

VDS (V)PULSE TESTDRAIN-SOURCE VOLTAGE

DRAIN CURRENT ID (A)VDS = 20 V

64Tc = −55°C
10025002468GATE-SOURCE VOLTAGE

VGS

10COMMON SOURCE
Tc = 25℃
8PULSE TEST

6ID = 6 A
4321.50041216VGS

20(V)RDS (ON) – ID
10Tc = −55°C

251001COMMON SOURCEVDS = 20 V
PULSE TEST
1DRAIN CURRENT ID

DRAIN-SOURCE ON RESISTANCERDS (ON) (mΩ)

FORWARD TRANSFER ADMITTANCE⎪Yfs⎪ (S)8GATE-SOURCE VOLTAGE⎪Yfs⎪ – ID

0.1
0.1(V)

10(V)

10010VDS50VDS – VGSCOMMON SOURCE

240DRAIN-SOURCE VOLTAGE

108302010(A)COMMON SOURCE
Tc = 25°C
PULSE TEST

1VGS = 10 V､15V

0.10.1

1DRAIN CURRENT ID

310(A)

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RDS (ON) – Tc

IDR – VDS
10COMMON SOURCEDRAIN REVERSE CURRENT IDR(A)

PULSE TEST43ID = 6A
32

VGS = 10 V
1.5

10−80

−4004080

CASE TEMPERATURE

Tc

5Tc = 25°C
PULSE TEST

310.5
1050.30.1
0160120COMMON SOURCE(°C)−0.21−0.4−0.6−0.8−1DRAIN-SOURCE VOLTAGEVDSCAPACITANCE – VDS

GATE THRESHOLD VOLTAGE
Vth (V)(pF)
CAPACITANCE C(V)

5Ciss
1000Coss

10010 COMMON SOURCE
VGS = 0 V
f = 1 MHz

CrssTc = 25°C
10.113510DRAIN-SOURCE VOLTAGE

30 50

VDS

432COMMON SOURCE
1100(V)VDS (V)DRAIN-SOURCE VOLTAGE

302010120

CASE TEMPERATURE−4004080120Tc

160(°C)DYNAMIC INPUT / OUTPUT
CHARACTERISTICS

4080ID = 1 mA

CASE TEMPERATURE

5040VDS = 10 V
PULSE TEST0−80

PD – Tc

DRAIN POWER DISSIPATION
PD (W)−1.2

Vth – Tc

1000000

VGS = 0, −1 V

3160Tc200(°C)

20500

400VDS

16VDD = 100 V
20030012400200
VGS8COMMON SOURCE
ID = 6 A

100

PULSE TEST
0010204030TOTAL GATE CHARGE

44Tc = 25°C

Qg

050

GATE-SOURCE VOLTAGE VGS (V)DRAIN-SOURCE ON RESISTANCERDS (ON) (m Ω)

5(nC)

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2SK3562

NORMALIZED TRANSIENT THERMALIMPEDANCE rth (t)/Rth (ch-c)

rth – tw101

Duty=0.5
0.2

0.1

0.10.05
PDM

0.02

t

SINGLE PULSE

0.01

T0.01

Duty = t/T
Rth (ch-c) = 3.125°C/W
0.001
10μ100μ1ｍ10ｍ

PULSE WIDTH

100ｍtw

110(s)SAFE OPERATING AREA

EAS – Tch

100500AVALANCHE ENERGY
EAS (mJ)

ID max (PULSED) *DRAIN CURRENT ID (A)100 µs *10ID max (CONTINUOUS) *1 ms *DC OPERATIONTc = 25°C

1400300200100※ SINGLE NONREPETITIVE

0.1

PULSE

025

Tc=25℃CURVES MUST BE DERATEDTEMPERATURE.

0.01
110VDSS max
100

DRAIN-SOURCE VOLTAGE

5075100125150

CHANNEL TEMPERATURE (INITIAL)
Tch (°C)

LINEARLY WITH INCREASE IN

1000

VDS(V)

15 V

BVDSSIAR−15 V
VDD
TEST CIRCUITRG = 25 Ω
VDD = 90 V, L = 16.8mH

5VDS

WAVE FORM

Ε AS =⎛⎞
1B VDSS⎟⋅ L ⋅ I2 ⋅ ⎜⎜B⎟2−VDD ⎠⎝ VDSS

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RESTRICTIONS ON PRODUCT USE

030619EAA• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights ofTOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physicalstress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards ofsafety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions andconditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life orbodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane orspaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in thisdocument shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

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