J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /MMBFJ113
N-Channel SwitchFeatures• This device is designed for low level analog switching,sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process 51• Source & Drain are interchangeable.

GGS

S

TO-92

SOT-23D

Figure 1. J111 / J112 / J113 Device Package

D

Note: Source & Drain
are interchangeable

Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113
Device Package

Ordering Information
Part Number

Top MarkPackage

Packing Method

J111

J111

TO-92 3L

Bulk

J111_D26Z

J111

TO-92 3L

Tape and ReelJ111_D74Z

J111

TO-92 3L

Ammo

J112

J112

TO-92 3L

Bulk

J112_D26Z

J112

TO-92 3L

Tape and Reel

J112_D27Z

J112

TO-92 3L

Tape and Reel

J112_D74Z

J112

TO-92 3L

Ammo

J113

J113

TO-92 3L

Bulk

J113_D74Z

J113

TO-92 3L

Ammo

J113_D75Z

J113

TO-92 3L

Ammo

MMBFJ111

6P

SOT-23 3L

Tape and Reel

MMBFJ112

6R

SOT-23 3L

Tape and Reel

MMBFJ113

6S

SOT-23 3L

Tape and Reel

© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5

www.fairchildsemi.com

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel SwitchJanuary 2015

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

SymbolParameter

ValueUnitVDG

Drain-Gate Voltage

35VVGSGate-Source Voltage-35V

IGF

Forward Gate Current

50mA-55 to 150°CTJ, TSTG

Operating and Storage Junction Temperature Range

Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.

Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.

Max.
J111 / J112 /J113(3)

MMBFJ111 /MMBFJ112 /MMBFJ113(4)Unit

Total Device Dissipation

625350mW

Derate Above 25°C

5.02.8mW/°C

RθJC

Thermal Resistance, Junction-to-Case

125RθJA

Thermal Resistance, Junction-to-Ambient

200Symbol

PD

Parameter°C/W
357°C/W

Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.

© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5

www.fairchildsemi.com
2

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch

Absolute Maximum Ratings(1), (2)Values are at TA = 25°C unless otherwise noted.

SymbolParameterConditions

Min.

Max.

Unit

Off Characteristics
V(BR)GSSIGSS
VGS(off)
ID(off)Gate-Source Breakdown Voltage

IG = -1.0 μA, VDS = 0

Gate Reverse Current

VGS = -15 V, VDS = 0

Gate-Source Cut-Off Voltage

VDS = 15 V, ID = 1.0 μA

Drain Cutoff Leakage Current-35

V-1.0

111

-3.0-10.0

112-1.0-5.0

113-0.5-3.0

VDS = 5.0 V, VGS = -10 V1.0nAVnAOn Characteristics
IDSS(5)Zero-Gate Voltage Drain Current

VDS = 15 V, VGS = 0111

20112

5.01132.0111rDS(on)Drain-Source On Resistance

VDS ≤ 0.1 V, VGS = 0mA
30
Ω

112

50

113

100

Small Signal Characteristics
Cdg(on)Csg(on)Drain-Gate &Source-Gate On
Capacitance

VDS = 0, VGS = 0, f = 1.0 MHz

28pF

Cdg(off)

Drain-Gate Off Capacitance

VDS = 0, VGS = -10 V, f = 1.0 MHz

5.0pF

Csg(off)

Source-Gate Off Capacitance

VDS = 0, VGS = -10 V, f = 1.0 MHz

5.0pF

Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.

© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5

www.fairchildsemi.com
3

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch

Electrical Characteristics

I D - DRAIN CURRENT (mA)g fs - TRANSCONDUCTANCE (mmhos)

T A = 25°C
TYP V GS(off) = - 2.0 V

V GS = 0 V- 0.2 V

8- 0.4 V

6- 0.6 V

4- 0.8 V- 1.0 V2- 1.4 V

00- 1.2 V

0.40.81.2
1.6
VDS - DRAIN-SOURCE VOLTAGE (V)

2100100r DS

5050g fs

2010I DSS
_5

I D - DRAIN CURRENT (mA)I D - DRAIN CURRENT (mA)

25°C
125°C
VGS(off) = - 2.0 V
125°C
25°C
- 55°CV DS = 15 V

1000

g fs - TRANSCONDUCTANCE (mmhos)

g fs - TRANSCONDUCTANCE (mmhos)

VGS(off) = - 3.0 V
25°C
125°C
VGS(off) = - 2.0 V- 55°C
25°C
125°C

10V DS = 15 V

0-1-2
VGS - GATE-SOURCE VOLTAGE (V)-3Figure 7. Transfer Characteristics© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5

510V DS = 15 V

25°C
125°C

8VGS(off) = - 1.1 V
125°C
25°C
- 55°C40-0.5-1-1.5
VGS - GATE-SOURCE VOLTAGE (V)Figure 6. Transfer Characteristics- 55°C

0VGS(off) = - 1.6 V

12Figure 5. Transfer Characteristics

20_- 55°C0-1-2-3
VGS - GATE-SOURCE VOLTAGE (V)

30__125V GS (OFF) - GATE CUTOFF VOLTAGE (V)16- 55°C

2010Figure 4. Parameter Interactions

VGS(off) = - 3.0 V

30I DSS , g fs @ V DS = 15V,V GS = 0 PULSEDr DS @ 1.0 mA, V GS = 0V GS(off) @ V DS = 15V,
I D = 1.0 nA_0.5

Figure 3. Common Drain-Source

4020r DS - DRAIN "ON" RESISTANCE (ΩΩ)

1030
V GS(off) = - 1.6 V- 55°C
25°C
125°C

20VGS(off) = - 1.1 V

10- 55°C
25°C
125°C

V DS = 15 V

00-0.5-1-1.5
VGS - GATE-SOURCE VOLTAGE (V)Figure 8. Transfer Characteristics

www.fairchildsemi.com
4J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch

Typical Performance Characteristics

r DS - NORMALIZED RESISTANCE ( Ω )r DS - DRAIN "ON" RESISTANCE (Ω)

100125°C

V GS(off)
TYP = - 2.0V

5025°C
125°C

V GS(off)- 55°C

TYP = - 7.0V

2025°Cr DS @ V GS = 0- 55°C

101251020I D - DRAIN CURRENT (mA)

50100100

V DG = 15V
f = 1.0 kHz

V GS(off) = - 1.4V

V GS(off) = - 3.0V

10.11I D - DRAIN CURRENT (mA)1010√

f = 0.1 - 1.0 MHz

C is (V DS = 0)
C is (V DS = 20)
C rs (V DS = 0)

0-4-8-12-16
V GS - GATE-SOURCE VOLTAGE (V)

210
0.2
0.4
0.6
0.8
1
VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)T A = 25°C

V DG = 5.0V

5.0V

f = 1.0 kHz

1010V
15V
20V

V GS(off) = - 5.0V

20V

1

5.0V
10V
15V

10V
15V
20V

V GS(off) = - 2.0V
V GS(off) = - 0.85V

0.1
0.01

0.1
I D - DRAIN CURRENT (mA)

10V DG = 15V

50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz= 0.21 @ f ≥ 1.0 kHz

105I D = 1.0 mA
I D = 10 mA

10.01

-20

Figure 13. Capacitance vs. Voltage© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5V GS
1 -________V GS(off)

5100e n - NOISE VOLTAGE (nV / Hz)

C is (C rs ) - CAPACITANCE (pF)

1001r DS =Figure 12. Output Conductance vs. Drain Current

Figure 11. Transconductance vs. Drain Current

10r DS20100

TA = 25°C

10V GS(off) @ 5.0V, 10 μA

50Figure 10. Normalized Drain Resistance vs.
Bias Voltage

g os - OUTPUT CONDUCTANCE ( μ mhos)

g fs - TRANSCONDUCTANCE (mmhos)

Figure 9. On Resistance vs. Drain Current

100

110f - FREQUENCY (kHz)100

Figure 14. Noise Voltage vs. Frequency

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5J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch

Typical Performance Characteristics (Continued)

V DG = 15V

P D - POWER DISSIPATION (mW)e n - NOISE VOLTAGE (nV / √ Hz)

100

f = 10 Hz
f = 100 Hz
f = 1.0 kHz

10f = 10 kHz
f = 100 kHz

10.010.11I D - DRAIN CURRENT (mA)

700600300
200100010t d(OFF) ,t OFF - TURN-OFF TIME (ns)t r(ON) ,t d(ON)- TURN-ON TIME (ns)20t r APPROX. I D INDEPENDENT
VGS(off) = 3.0V

15T A = 25°C
I D = 6.6 mA

102.5 mA- 6.0V

t d (ON)

V GS = -12V

500-2-4-6-8-10V GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V)255075100TEMPERATURE ( o C)

125

150100T A = 25°C
VGS(off)= -2.2V

80t (off)

60 - 7.5Vt d(off) DEVICEV GS(off) INDEPENDENT

40200

V DD = 3.0V
V GS = -12V- 4.0Vt d(off)02468I D - DRAIN CURRENT (mA)

10Figure 18. Switching Turn-Off Time vs. Drain Current

Figure 17. Switching Turn-On Time vs.
Gate-Source Voltage© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.50Figure 16. Power Dissipation vs.
Ambient Temperature

V DD = 3.0Vt r (ON)

SOT-23400

Figure 15. Noise Voltage vs. Current

25TO-92500

www.fairchildsemi.com
6

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch

Typical Performance Characteristics (Continued)

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch

Physical Dimensions

DFigure 19. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5

www.fairchildsemi.com
7J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch

Physical Dimensions (Continued)

Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5

www.fairchildsemi.com
8J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch

Physical Dimensions (Continued)

0.95

2.92±0.20
31.40

1.30+0.20
-0.15

12.20

20.60
0.37(0.29)
0.95

0.20

1.00

A B

1.901.90
LAND PATTERN
RECOMMENDATIONSEE DETAIL A

1.20 MAX

0.100.00(0.93)

0.10CC2.40±0.30

NOTES: UNLESS OTHERWISE SPECIFIEDGAGE PLANE

0.230.08

A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PERASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV100.25

0.20 MIN(0.55)SEATINGPLANESCALE: 2XFigure 21. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5

www.fairchildsemi.com
9

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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. FairchildSemiconductor reserves the right to make changes at any time without notice to improve design.
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