19 May (sun)20 May (Mon)

21 May (Tue)22 May (Wed)23 May (Thu)

Room A

Room A

Room B

Room CRoom D

Room E

Room A

Room B

Room CRoom D

Room E

Room A

Room B

Room CRoom D

CSW 2019 Opening

TuA1
8:30-10:30

TuB1
8:30-10:30

TuC1
8:30-10:30

TuD1
8:30-10:30

TuE1
8:30-10:30

WeA1
8:30-10:00

WeB1
8:30-10:00

WeC1
8:30-10:00

WeD1
8:30-10:00

WeE1
8:30-10:00

ThA1
8:30-10:30

ThB1
8:30-10:30

ThC1
8:30-10:30

ThD1
8:30-10:30

Nanomechanic

GaN MOSGrowth andGa2O3 Bulk

hBN : Growth I

GaN and

Photovoltaic

Nanowire

Quantum Dots

Organic

Growth of

Novel

Oxides: Doping

GaN ands, Thermal andPower FETs

Sensor of 2D

and Epitaxial

Relatedand LEDDevices

and Coherent

DevicesNanostructure

Photonics

Materials

GrowthTechnologies II

8:30-8:40

CSW 2019 Plenary MoPLN1-1
8:40-9:20

phononCSW 2019 Plenary MoPLN1-2

dynamics

transport

9:20-10:00

Relateds andTechnologies

Quantum-IV

Effect Devices

Coffee Break 10:30-11:00

10:30-11:10

TuA2
TuB2
TuC2
TuD2
TuE2
11:00-12:30 11:00-12:30 11:00-12:30 11:00-12:30 11:00-12:30

CSW 2019 Plenary MoPLN2-2

Superconducto Quantum Dot

11:10-11:50

r-IPRM/ISCS Award Ceremony & Photo
11:50-12:30

12:30-18:00

Special Lecture I

Room A

Room B

Room C

LasersRF and on-Si Ga2O3 Process
TechnologyandhBN : Point
Defects

GaN andMid Infrared

Fabrication of Spin Transport

RelatedPhotonics

Nanostructure and Dynamics

Technologiess

III

Advanced

Photodetector

GaN Power

Epitaxials

Devices andCharacterizatio

GrowthCharacterizationTechniques ofn

III-V Materials

Lunch Time 12:30-14:00
Room E

Room A

Perovskite

ThA2
ThB2
ThC2
11:00-12:30 11:00-12:30 11:00-12:30

HybridStructures

Room D

THz Devices

Organic andCoffee Break 10:30-11:00

Semiconductor

Lunch Time 12:30-14:00
Registration

WeA2
WeB2
WeC2
WeD2
WeE2
10:30-12:00 10:30-11:45 10:30-12:00 10:30-12:00 10:30-12:00

CSW 2019 Plenary MoPLN2-1

ThE1
9:00-10:30

materials

Coffee Break 10:00-10:30
Coffee Break 10:00-10:30

Room E

Room B

Room CRoom D

Closing and Student Award Ceremony
12:45-13:30

Room E

MoA3
MoB3
MoC3
MoD3
MoE3
TuA3
TuB3
TuC3
TuD3
TuE3
14:00-16:00 14:00-16:00 14:00-16:00 14:00-16:00 14:00-16:00 14:00-16:15 14:00-16:00 14:00-16:00 14:00-16:00 14:00-16:00
Advanced

Growth ofElectrical andGaN andOxides:

Advanced

Epitaxial

Characterizatio

Ga2O3

hBN :Lasers

NitridesOpticalRelated

Structures andPhotonic

Growth on

n ofElectrical

Spectroscopy

Properties

Integration

Group IV

Nanostructure

Devicesand Growth II

Substratess

Devices of 2D Technologies I
Materials

A: Epitaxy, fabrication, and related technologies
B: RF electron devices

15:00-16:00

Excursion

Coffee Break

12:30-18:00

16:00-16:30
Special Lecture II

Poster Session I

Poster Session II

16:30-17:30

16:00-18:00

16:00-18:00

C: High power electron devices
D: Photonic devices and related technologies
E: Physics, spintronics, and novel device concepts
F: Nanocharacterization and nanostructures
G: GaN and related semiconductors

Reception
18:00-20:00

Social Program I

Social Program II

18:00-19:00

18:00-19:00

H: Oxide semiconductors
I: Nanocarbon and novel 2D materials
Banquet18:30-21:00

J: Organic semiconductors and flexible materials
SS1: (Special session) Gallium oxide: materials anddevices
SS2: (Special session) Hexagonal boron nitride