Compound Semiconductor Week 2019

May 19 (Sun)

CSW2019 ProgramMay 19 (Sun)Special Lecture

Room C

15:00-17:30

15:00 - 16:00

The Fundamentals of Quantum Dots for Advanced Photonics I
Yasuhiko Arakawa
The University of Tokyo, Japan

Coffee Break

16:00 - 16:30
16:30 - 17:30

The Fundamentals of Quantum Dots for Advanced Photonics II
Yasuhiko Arakawa
The University of Tokyo, Japan

Compound Semiconductor Week 2019

May 20 (Mon)May 20 (Mon)

Opening Session
MoPLN1Plenary Session 1

Room A

08:30-08:40

Room A

08:40-10:00

MoPLN1-1 (Plenary)

08:40 - 09:20

GaN as a Key Material for Realizing Internet of Energy
Hiroshi Amano
Nagoya University, JapanMoPLN1-2 (Plenary)

09:20 - 10:00

Large-Scale Integrated Photonics for Accelerated Communication and Computing
Ray Beausoleil
Hewlett Packard Enterprise, United States of America

Coffee BreakMoPLN2Plenary Session 2

10:00 - 10:30

Room AMoPLN2-1 (Plenary)

10:30-11:50

10:30 - 11:10

Bottom-Up Grown Nanowire Quantum Devices
Erik Bakkers
Eindhoven University of Technology, Netherlands

MoPLN2-2 (Plenary)

11:10 - 11:50

Materials and Device Challenges for Next Generation LIDARSJames Harris
Stanford University, United States of America

ISCS/IPRM Award Ceremony & Photo
Lunch BreakRoom A

11:50-12:30

12:30 - 14:00

Compound Semiconductor Week 2019

MoA3

Advanced Lasers

May 20 (Mon)

Room A

14:00-16:00

Chair: Mike Larson and Mitsuru Takenaka

MoA3-1 (Invited)

14:00 - 14:30

Uncooled 53-Gbaud PAM4 Operation of EA/DFB and Directly Modulated DFB Laser for
400GbE Applications
Kazuhiko Naoe,* Takayuki Nakajima, Yoshihiro Nakai, Yoriyoshi Yamaguchi, Yasushi Sakuma, and Noriko Sasada
Datacom Business Unit, Lumentum, Japan

MoA3-3 (Oral)

14:30 - 14:45µm Membrane Distributed Reflector Lasers on SiC Wafers
Single-mode Operation of 1.3-µSuguru Yamaoka,* Ryo Nakao, Takuro Fujii, Koji Takeda, Tatsurou Hiraki, Hidetaka Nishi, Takaaki Kakitsuka, Tai
Tsuchizawa, and Shinji Matsuo
NTT Device Technology Labs, NTT Corporation, Japan

MoA3-4 (Oral)

14:45 - 15:00

Buried Tunnel Junction VCSEL with High Contrast Grating Top Reflector
Jonas Kapraun,* Jiaxing Wang, Jipeng Qi, Kevin Cook, Emil Kolev, and Connie J. Chang-Hasnain
Department of Electrical Engineering and Computer Sciences and Tsinghua-Berkeley Shenzhen Institute, University of California Berkeley , United States of America

MoA3-5 (Oral)

15:00 - 15:15

InP-based devices integrating liquid crystals microcells for a tunable laser emission or awavelength selective photodetection
Christophe LEVALLOIS,*,1 Benjamin BOISNARD,2 Cyril PARANTHOEN,1 Salvatore PES,1 Thierry CAMPS,2 Benattou
SADANI,2 Sophie BOUCHOULE,3 Laurent DUPONT,4 Mehdi ALOUINI,1 and Veronique BARDINAL2
1Univ Rennes, INSA Rennes, CNRS, Institut FOTON, France, 2Univ Toulouse, CNRS, LAAS, France, 3Centre de Nanosciences
et de Nanotechnologies, CNRS, Université Paris-Sud, France, 4IMT Atlantique, Optics Department, France

MoA3-6 (Oral)

15:15 - 15:30

Electrically injected 1.64 µ m-emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE
Honghyuk Kim,*,1 Bei Shi,2 Qiang Li,2 Ayushi Rajeev,1 Kei May Lau,2 Thomas F. Kuech,3 and Luke J. Mawst1
1Department of Electrical and Computer Engineering, University of Wisconsin-Madison, United States of America,
2Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong,
3Department of Chemical and Biological Engineering, University of Wisconsin-Madison, United States of America

MoA3-7 (Oral)

15:30 - 15:45

Low Loss InP Membrane Photonic Integrated Circuits Enabled by 193-nm Deep UV
Lithography
Jorn van Engelen,* Sander Reniers, Jeroen Bolk, Kevin Williams, Jos van der Tol, and Yuqing Jiao
Institute for Photonic Integration, Eindhoven University of Technology, Netherlands

MoA3-8 (Oral)

Low Noise Monolithically Integrated Membrane DFB Laser on Silicon
Vadim Pogoretskiy,* Jos van der Tol, and Yuqing Jiao
Eindhoven University of Technology, Netherlands

15:45 - 16:00

Compound Semiconductor Week 2019

MoB3

Growth of Nitrides

May 20 (Mon)

Room B

14:00-16:00

Chair: Takahiro Nagata and Yosuke Shimura

MoB3-1 (Invited)

14:00 - 14:30

III-Nitride Nanocrystals: From Low Threshold Ultraviolet Laser Diodes to High Eﬃciency Artificial Photosynthesis
Zetian Mi
Department of Electrical Engineering and Computer Science, University of Michigan, United States of America

MoB3-3 (Invited)

14:30 - 15:00

Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications
D Scott Katzer,*,1 Neeraj Nepal,1 Matthew T. Hardy,1 Brian P. Downey,1 David F. Storm,1 Eric N. Jin,2 David J. Meyer,1 Rusen
Yan,3 Guru Khalsa,3 John Wright,3 Huili (Grace) Xing,3 and Debdeep Jena3
1US Naval Research Laboratory, United States of America, 2National Research Council (Residing at the US Naval ResearchLaboratory), United States of America, 3Cornell University, United States of America

MoB3-5 (Oral)

15:00 - 15:15

Impact of the insertion of AlGaN back barrier on crystal quality, NS, and mobility of
GaN-channel HEMTs with high-Al-content AlGaN top barrier grown on high-resistivity
Si substrate
Takuya Hoshi,* Hiroki Sugiyama, Fumito Nakajima, and Hideaki Matsuzaki
NTT Device Research Labs, NTT Corporation, Japan

MoB3-6 (Oral)

15:15 - 15:30

Eﬀect of introducing optical blanking to GaN epitaxy by using pulsed laser deposition
technology
Kazuki Kodama* and Daisuke Ueda
Green Innovation Lab, Kyoto Institute of Technology, Japan

MoB3-7 (Oral)

15:30 - 15:45

Fabrication of c-AlN/a-Sapphire Templates by Sputtering and High-Temperature Annealing
Yusuke Hayashi,*,1 Kaito Fujikawa,2 Kenjiro Uesugi,3 Kanako Shojiki,2 and Hideto Miyake1,2
1Mie Univ., Grad. School of RIS, Japan, 2Mie Univ., Grad. School of Eng., Japan, 3Mie Univ., SPORR, Japan

MoB3-8 (Oral)

15:45 - 16:00

Low resistivity ohmic contacts to n-ZnSe by utilizing a novel regrowth technique
Johanna Janßen,*,1 Felix Hartz,2 Till Huckemann,2 Lars Reiner Schreiber,2 Detlev Grützmacher,1 and Alexander Pawlis1
1Peter Grünberg Institute 9, Forschungszentrum Jülich, Germany, 2JARA - Institute for Quantum Information, RWTH Aachen
University, Germany

MoC3

Electrical and Optical Devices of 2D Materials

Room C

14:00-16:00

Chair: Masaki Nakano and Seiji Akita

MoC3-1 (Invited)

14:00 - 14:30

Mid-infrared photoresponse and robotic fabrication of graphene/h-BN van der Waals heterostructures
Tomoki Machida
Institute of Industrial Science, University of Tokyo, Japan

Compound Semiconductor Week 2019

May 20 (Mon)

MoC3-3 (Oral)

14:30 - 14:45

All solid-state 2D tunnel FET
Kosuke Nagashio
Department of Materials Engineering, The University of Tokyo, Japan

MoC3-4 (Oral)

14:45 - 15:00

Resonant Enhancement of Band-to-band Tunneling in In-plane MoS2/WS2 Heterojunction Tunnel Transistors
Tatsuya Kuroda, Futo Hashimoto, and Nobuya Mori*
Graduate School of Engineering, Osaka University, Japan

MoC3-5 (Oral)

15:00 - 15:15

Cyclotron resonance absorption in trilayer graphene
Momoko Onodera,*,1 Miho Arai,1 Satoru Masubuchi,1 Kei Kinoshita,1 Rai Moriya,1 Kenji Watanabe,2 Takashi Taniguchi,2and Tomoki Machida1,3
1Institute of Industrial Science, University of Tokyo, Japan, 2National Institute for Materials Science, Japan, 3CREST, JST,Japan

MoC3-6 (Invited)

15:15 - 15:45

Atomically-Thin Photovoltaics: Progress, Promise and Interface Physics
Deep Manoj Jariwala
Department of Electrical and Systems Engineering, United States of America

MoC3-8 (Oral)

15:45 - 16:00

Exciton Diﬀusion in hBN-encapsulated Monolayer MoSe2
Takato Hotta,*,1 Shohei Higuchi,1 Uchiyama Yosuke,1 Keiji Ueno,2 Kenji Watanabe,3 Takashi Taniguchi,3 Hisanori Shinohara,1and Ryo Kitaura1
1Department of Chemistry, Nagoya University, Japan, 2Department of Chemistry, Saitama University, Japan, 3National Institute for Materials Science, Japan

MoD3

GaN and Related Technologies I

Room D

14:00-16:00

Chair: Tsuyoshi Tanaka and Tetsu Kachi

MoD3-1 (Oral)

14:00 - 14:15

Aluminum Phase Segregation Eﬀect in Growing an AlGaN Nanorod with the Selfcatalytic Vapor-liquid-solid Mode
Charng-Gan Tu,1 Xu Zhang,2 Keng-Ping Chou,1 Wai Fong Tse,1 Yi-Chiao Hsu,1 Yen-Po Chen,1 Yean-Woei Kiang,1 and ChihChung Yang*,11National Taiwan University, Taiwan, 2Zhengzhou University, China

MoD3-2 (Oral)

14:15 - 14:30

Current injection and light confinement for UVB light emitting devices with graded pAlGaN
Kosuke Sato,*,1,2 Shinji Yasue,2 Yuya Ogino,2 Motoaki Iwaya,2 Tetsuya Takeuchi,2 Satoshi Kamiyama,2 and Isamu Akasaki2,3
1Asahi-Kasei Corporation, Japan, 2Faculty of Science and Technology, Meijo University, Japan, 3Akasaki Research Center,
Nagoya University, Japan

Compound Semiconductor Week 2019

May 20 (Mon)

MoD3-3 (Oral)

14:30 - 14:45

Green Semipolar (112 2) InGaN Micro-Light-Emitting-Diodes on (112 2) GaN/Sapphire
Template
Matthew S. Wong,*,1 Michel Khoury,1 Hongjian Li,1 Bastien Bonef,1 Aidan A. Taylor,1 Haojun Zhang,2 Philippe De Mierry,3Shuji Nakamura,1,2 and Steven P. DenBaars1,2
1Materials Department, University of California Santa Barbara, United States of America, 2Department of Electrical andComputer Engineering, University of California Santa Barbara, United States of America, 3CNRS−CRHEA, Rue Bernard
Grégory, France

MoD3-4 (Oral)

14:45 - 15:00

Relaxed InGaN engineered substrates with lattice parameter of 3,205Å and beyond enabling direct emission at 630nm
Eric Guiot,*,1 David Sotta,1 Olivier Ledoux,1 Mélanie Lagrange,1 Guillaume Lavaitte,1 Amélie Dussaigne,2 Sébastien Chenot,3
and Benjamin Damilano3
1SOITEC, France, 2Univ. Grenoble Alpes, France, 3Université Côte d’Azur, France

MoD3-5 (Oral)

15:00 - 15:15

Optical Properties of Room Temperature Single Photon Emitters in GaN
Mehran Kianinia,*,1 Minh Nguyen,1 Tongtong Zhu,2 Carlo Bradac,1 Milos Toth,1 Rachel Oliver,2 and Igor Aharonovich1
1School of Mathematical and Physical Sciences, University of Technology Sydney, Australia, 2Department of Materials Scienceand Metallurgy, University of Cambridge, United Kingdom

MoD3-6 (Oral)

15:15 - 15:30

Probing alloy formation using diﬀerent excitonic species: The particular case of InGaN
Gordon Callsen,* Raphael Butté, and Nicolas Grandjean
Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland

MoD3-7 (Oral)

15:30 - 15:45

Hybrid III-Nitride Tunnel Junctions for Low Excess Voltage Blue LEDs and UVC LEDs
Jianfeng Wang,*,1 Erin Young,1 Burhan SaifAddin,1 Chris Zollner,1 Abdullah Almogbel,1 Micha Fireman,1 Michael Izza,1Shuji Nakamura,1,2 Steve Denbaars,1,2 and James Speck1
1Materials Department, University of California, Santa Barbara, United States of America, 2Department of Electrical andComputer Engineering, University of California, Santa Barbara, United States of America

MoD3-8 (Oral)

15:45 - 16:00

Recent progress in AlGaN UV-C LEDs grown on SiC
Abdullah Almogbel,*,1,2 Burhan SaifAddin,1,2 Christian Zollner,1 Michael Iza,1 Hamad Albrithen,2,3 Ahmed Alyamani,2 Abdulrahman Albadri,2 Shuji Nakamura,1 Steven DenBaars,1 and James Speck1
1University of California, Santa Barbara, United States of America, 2King Abdulaziz City for Science and Technology, Saudi
Arabia, 3King Saud University, Saudi Arabia

MoE3

Oxides: Structures and Properties

Room E

14:00-16:00

Chair: Elzbieta Guziewicz and Atsushi Tsukazaki

MoE3-1 (Invited)

Interface engineering of Sn-based oxide semiconductors
Atsushi Tsukazaki* and Kohei Fujiwara
Institute for Materials Research, Tohoku University, Japan

14:00 - 14:30

Compound Semiconductor Week 2019

May 20 (Mon)

MoE3-3 (Invited)

14:30 - 15:00

Hydrogen in semiconducting oxides
Farida Selim
1Department of Physics and Astronomy, Bowling Green State University, United States of America, 2Center for Photochemical
sciences, Bowling Green State University, United States of America

MoE3-5 (Oral)

15:00 - 15:15

VUV Cathodoluminescence Spectra of Rocksalt-structured MgZnO/MgO Quantum
Wells
Kanta Kudo,*,1 Kyouhei Ishii,2 Mizuki Ono,1 Yuki Fujiwara,1 Kentaro Kaneko,2,3 Tomohiro Yamaguchi,1 Tohru Honda,1Shizuo Fujita,2,3 and Takeyoshi Onuma1
1Department of Applied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University,
Japan, 2Department of Electronic Science and Engineering, Kyoto University, Japan, 3Photonics and Electronics Science andEngineering Center, Kyoto University, Japan

MoE3-6 (Oral)

15:15 - 15:30

Eﬀects of the Growth Environment on the Phase Stability of Sputter-deposited CdxZn1-xO
AlloysChun Yuen Ho,*,1 Chao Ping Liu,1,2 Yi-Chun Chen,3 Zhi-Quan Huang,3 Feng-Chuan Chuang,3 and Kin Man Yu1,4
1Department of Physics, City University of Hong Kong, Hong Kong, 2Department of Physics, College of Science, Shantou
University, China, 3Department of Physics, National Sun Yat-Sen University, Taiwan, 4Department of Materials Science andEngineering, City University of Hong Kong, Hong Kong

MoE3-7 (Oral)

15:30 - 15:45

Growth of Single Crystalline c-In2O3(111) Layers on Oﬀ-Axis c-Plane Sapphire Substrates by Halide Vapor Phase Epitaxy
Yuya Saimoto,*,1 Kenta Nagai,1 Hidetoshi Nakahata,1 Keita Konishi,1 and Yoshinao Kumagai1,2
1Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan, 2Institute of Global Innovation
Research, Tokyo University of Agriculture and Technology, Japan

MoE3-8 (Oral)

15:45 - 16:00

Properties of the In2O3(111) and the β -Ga2O3(100) non-polar surfaces
Celina Seraphin Schulze,*,1 Jonathan Hofmann,1 Christian Bruckmann,1 Robert Zielinski,1 Wjatscheslav Martyanov,1 Hendrik
Janssen,1 Andrea Lenz,1 Martin Franz,1 Zbigniew Galazka,2 and Holger Eisele1
1Institut für Festkörperphysik, Technische Universität Berlin, Germany, 2Leibniz-Institut für Kristallzüchtung, Germany

MoP

Poster Session I

Reception Hall

16:00-18:00

MoP-A-1 (Poster)

Investigation of Morphology of InSb/InAs Quantum Nano-Stripe Grown by Molecular
Beam Epitaxy
Karn Rongrueangkul,*,1 Panithan Srisinsuphya,1 Supachok Thainoi,1 Suwit Kiravittaya,2 Noppadon Nuntawong,3 Suwat
Sopitpan,3 Visittapong Yordsri,3 Chanchana Thanachayanont,3 Songphol Kanjanachuchai,1 Somchai Ratanathammaphan,1Aniwat Tandaechanurat,1 and Somsak Panyakeow1
1Faculty of Engineering, Chulalongkorn University, Thailand, 2Faculty of Engineering, Naresuan University, Thailand,
3National Science and Technology Development Agency, Thailand

Compound Semiconductor Week 2019

May 20 (Mon)

MoP-A-2 (Poster)

Improved Electron Transport Properties of Ga1-xInxSb Quantum Well Channel Using
Strained-Al0.40In0.60Sb/Al1-yInySb Stepped Buﬀer
Mizuho Hiraoka,* Yuki Endoh, Koki Osawa, Naoyuki Kishimoto, Takuya Hayashi, Ryuto Machida, Akira Endoh, and Hiroki
Fujishiro
Tokyo University of Science, Japan

MoP-A-3 (Poster)

Crystal structures of GaAs/GaNAs core- multishell nanowire
Takaya Mita,* Ryo Fujiwara, Mitsuki Yukimune, and Fumitaro Isikawa
Graduate School of Science and Engineering, Ehime University, Japan

MoP-A-4 (Poster)

Selective Area Epitaxy of GaP Nanowire Array on Si (111) by MOCVD
Wonsik Choi, Shizhao Fan, Parsian Mohseni, Minjoo Larry Lee, and Xiuling Li*
Electrical and Computer Engineering Department, University of Illinois, United States of America

MoP-A-7 (Poster)

1.6 µ m Emission from InAs QDs in Metamorphic InGaAs Matrix
Wenbo Zhan,*,1 Satomi Ishida,2 Jinkwan Kwoen,1 Satoshi Iwamoto,1,3 and Yasuhiko Arakawa1
1Institute for Nano Quantum Information Electronics, the University of Tokyo, Japan, 2Research Center for Advanced Scienceand Technology, the University of Tokyo, Japan, 3Institute of Industrial Science, the University of Tokyo, Japan

MoP-A-8 (Poster)

Investigation of InAs Quantum Dot Deformation During Capping with an InGaAs Layer
Using Time-resolved RHEED Measurements
Daigo Ikuno, Tao Wang, Naoki Okada, and Nobuhiko Ozaki*
Faculty of Systems Eng., Wakayama Univ., Japan

MoP-A-9 (Poster)

Suppression of Three-Dimensional Pit Formation of InAs on GaSb(001) by Two-Step
MBE
Shigkezu Okumura,*,1,2 Ryo Suzuki,1 Koji Tsunoda,1 Hironori Nishino,1 and Masakazu Sugiyama2
1Fujitsu Laboratories Limited, Japan, 2Research Center for Advanced Science and Technology, The University of Tokyo, Japan

MoP-A-10 (Poster)

Molecular Beam Epitaxial Growth of InSb and AlSb Heterostructure on InSb Substrates
Jirapat Ounpipat,*,1 Engrhyt Rattanawongnara,1 Zon,1 Supachok Thainoi,1 Suwit Kiravittaya,2 Aniwat Tandaechanurat,3 Noppadon Nuntawong,4 Suwat Sopitpan,5 Visittapong Yordsri,6 Chanchana Thanachayanont,6 Songphol Kanjanachuchai,1 Somchai Ratanathammaphan,1 and Somsak Panyakeow1
1SDRL, Chulalongkorn University, Thailand, 2AOT Lab., Naresuan University, Thailand, 3ISE, Chulalongkorn University,
Thailand, 4NECTEC, NSTDA, Thailand, 5TMEC, NSTDA, Thailand, 6MTEC, NSTDA, Thailand

MoP-A-11 (Poster)Eﬀect of Annealing on The Bottom Cell in GaInP/GaAs/GaInNAsSb Triple Junction Solar Cells by MBE/MOCVD Hybrid Growth
Naoya Miyashita,* Yilun He, Nazmul Ahsan, and Yoshitaka Okada
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Japan

MoP-A-12 (Poster)Eﬀects of Channel Scaling on Electron Transport Properties of Sb-based HEMTs
Naoyuki Kishimoto,* Yuki Endoh, Takuya Hayashi, Mizuho Hiraoka, Ryuto Machida, Akira Endoh, and Hiroki I. Fujishiro
Department of Applied Electronics, Tokyo University of Science, Japan

Compound Semiconductor Week 2019

May 20 (Mon)

MoP-A-13 (Poster) - Late News -Below-bandgap photoluminescence from GaAs
Ronel Christian Roca,* Kosei Fukui, Hiroto Mizuno, Mikihito Suzuki, and Itaru Kamiya
Toyota Technological Institute, Japan

MoP-B-1 (Poster)

A Sub-THz RTD-pair Oscillator with Enhanced RF Output Power Characteristics
Maengkyu Kim* and Kyounghoon Yang
School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Republic of Korea

MoP-B-2 (Poster)

The Output Power Characteristics of the Series-connected RTD Pair
Maengkyu Kim* and Kyounghoon Yang
School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Republic of Korea

MoP-B-3 (Poster)

1.2 THz maximum frequency of oscillation achieved by using 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT
mohammed SAMNOUNI,* Nicolas WICHMANN, Xavier Wallart, Christophe COINION, Sylvie LEPILLIET, and Sylvain
Bollaert
IEMN, University of Lille,CNRS, France

MoP-B-4 (Poster)

Fabrication of 0.25 um T-Gate AlInGaN/AlN/GaN HEMTs by I-Line Optical Lithography
Yi-Zhen Liu,*,1 Wei-Chih Ho,2 Indraneel Sanyal,1 and Jen-Inn Chyi1,3
1Department of Electrical Engineering, National Central University, Taiwan, 2Jelly Semiconductor Technology, Taiwan,
3Research Center for Applied Sciences, Academia Sinica, Taiwan

MoP-B-5 (Poster)Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise
Amplifiers under a magnetic field
Isabel Hanna Harrysson Rodrigues,*,1 David Niepce,1 Giuseppe Moschetti,2 Arsalan Pourkabirian,2 Joel Schleeh,2 Thilo
Bauch,1 and Jan Grahn1
1Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden, 2Low Noise Factory AB,
SwedenMoP-B-6 (Poster)

Quaternary In0.05Al0.70Ga0.25N/GaN HEMTs With On-Resistance of 0.97 Ω -mm
Ji Hyun Hwang,* Mi Jang, Juyeong Park, and Jae-Hyung Jang
Gwangju Institute of Science and Technology, Republic of Korea

MoP-B-7 (Poster) - Late News -Characterization of the Eﬀective Tunneling Time and Phase Relaxation Time in TripleBarrier Resonant Tunneling Diodes
Kotaro Aikawa,*,1 Michihiko Suhara,1 Kiyoto Asakawa,2 Khaled Arzi,3 Nils Weimann,3 and Werner Prost3
1Graduate School of System Design, Tokyo Metropolitan University, Japan, 2Tokyo Metropolitan College of Industrial Technology, Japan, 3Faculty of Engineering, University of Duisburg-Essen, Germany

Compound Semiconductor Week 2019

May 20 (Mon)

MoP-B-8 (Poster) - Late News -Experimental Observation of Rectification Around 280 GHz Wave in the GaAsSb/InGaAs
Backward Diode Rectenna Monolithically Integrated with a Bow-Tie Antenna
Michihiko Suhara,*,1 Masataka Nakanishi,1 Shintaro Kitakado,1 Kiyoto Asakawa,2 Masaru Sato,3 Tsuyoshi Takahashi,3
Kenichi Kawaguchi,3 and Naoya Okamoto3
1Tokyo Metropolitan University, Japan, 2Tokyo Metropolitan College of Industrial Technology, Japan, 3Fujitsu Laboratories
Ltd., Japan

MoP-D-1 (Poster)Electric-field control of optical-spin injection from an InGaAs quantum well to p-doped
quantum dots
Soyoung Park,* Hang Chen, Junichi Takayama, Satoshi Hiura, and Akihiro Murayama
GSIST, Hokkaido University, Japan

MoP-D-2 (Poster)

Chiral Cavity Mode in a GaAs-Based Three-Dimensional Photonic Crystal Fabricated bya Micro-Manipulation Method using an Optical Microscope
Yuzo Kinuta,*,1 Shun Takahashi,1 Kenichi Yamashita,1 Jun Tatebayashi,2 Satoshi Iwamoto,2,3 and Yasuhiko Arakawa2
1Kyoto Institute of Technology, Japan, 2INQIE, Univ. of Tokyo, Japan, 3IIS, Univ. of Tokyo, Japan

MoP-D-3 (Poster)

Transmission Characteristics of a Novel Waveguide Structure for Wavelength Division
Multiplexing
Takuya Yamaguchi,* Takahiro Horiba, Masato Morifuji, and Masahiko Kondow
Division of Electrical, Electronic and Information Engineering, Osaka University, Japan

MoP-D-4 (Poster)

Regional band-gap tailoring of 1550nm-band InAs quantum dot
Shohei Isawa,*,1 Yota Akashi,1 Atsushi Matsumoto,2 Kouichi Akahane,2 Yuichi Matsushima,1 Hiroshi Ishikawa,1 and Katsuyuki Utaka1
1University of Waseda, Japan, 2NICT, Japan

MoP-D-5 (Poster)

Numerical Investigation of Topological Edge States in a GaAs-Based Three-Dimensional
Chiral Photonic Crystal
Shun Takahashi,*,1 Shuhei Oono,2 Yasuhiro Hatsugai,2 Yasuhiko Arakawa,3 and Satoshi Iwamoto3,4
1Kyoto Institute of Technology, Japan, 2Grad. Sch. Pure Appl. Sci., Univ. of Tsukuba, Japan, 3INQIE, Univ. of Tokyo, Japan,
4IIS, Univ. of Tokyo, Japan

MoP-D-6 (Poster)Metamaterial perfect absorber based on heavily doped semiconductor for thermal emission
Franziska Barho, Laurent Cerutti,* Fernando Gonzalez-Posada Flores, and Thierry Taliercio
IES, Univ. Montpellier, CNRS, 34000 Montpellier, France

MoP-D-8 (Poster)Two-dimensional photonic crystal phosphors for eﬃcient and polarization-insensitive excitation
Tae-Yun Lee,*,1,2 Jongho Lee,1,2 Yeonsang Park,3 Kyung-Sang Cho,3 Myeong-Eun Kim,1,2 Kyungtaek Min,4 and Heonsu
Jeon1,2,5
1Department of Physics and Astronomy, Seoul National University, Republic of Korea, 2Inter-university Semiconductor Research Center, Seoul National University, Republic of Korea, 3Samsung Advanced Institute of Technology, Republic of Korea,
4Department of Nano-Optical Engineering, Korea Polytechnic University, Republic of Korea, 5Institute of Applied Physics,
Seoul National University, Republic of Korea

Compound Semiconductor Week 2019

May 20 (Mon)

MoP-D-9 (Poster)

InAs/GaAs quantum Dot Intermixing by Dry Etching and Ion Implantation
Yu Hiraishi,*,1 Tomohiro Shirai,1 Jinkwan Kwoen,2 Yuichi Matsushima,1 Hiroshi Ishikawa,1 Yasuhiko Arakawa,2 and Katsuyuki Utaka1
1Waseda University, Japan, 2NanoQuine, Univ. Of Tokyo, Japan

MoP-D-10 (Poster)

InGaAs Quantum Dot Dual-Band Photodetector of Bipolar Photocurrent
Tsong-Sheng Lay,* Z. H. Lin, and T. E. Tzeng
Department of Electrical Engineering, and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taiwan

MoP-D-11 (Poster)

Buried-ridge-waveguide Type GaInAsP/InP Membrane Distributed-Reflector Lasers for
Reduction of Diﬀerential ResistanceNaoki Takahashi,*,1 Nagisa Nakamura,1 Takamasa Yoshida,1 Weicheng Fang,1 Tomohiro Amemiya,1,2 Nobuhiko
Nishiyama,1,2 and Shigehisa Arai1,2
1Dept. of Electrical and Electronic Engineering, Tokyo Inst. of Technology, Japan, 2IIR, Tokyo Inst. of Technology, Japan

MoP-D-12 (Poster)

Dilute Waveguide Reflective Semiconductor Optical Amplifier for 3D Hybrid Silicon Photonics Integration
Bowen Song,* Youning Luo, Sergio Pinna, Yuan Liu, and Jonathan Klamkin
Department of Electrical and Computer Engineering University of California, Santa Barbara, United States of America

MoP-D-13 (Poster)Thin Film Optical Characteristics of InP/Si Hybrid Wafers by Chip-on-Wafer Direct
Transfer Bonding Technology
Nobuhiko Nishiyama,*,1,2 Kazuya Ohira,3 Liu Bai,1 Yoichiro Kurita,3 Hideto Furuyama,3 Miki Inamura,4 Tomoyuki Abe,4Takuya Mitarai,1 Kenji Morita,1 and Shigehisa Arai1,2
1Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan, 2Institute of Innovative Research (IIR),
Tokyo Institute of Technology, Japan, 3Corporate Research & Development Center, Toshiba Corporation, Japan, 4Ayumi Industry, Co., Ltd., Japan

MoP-D-14 (Poster)

Investigation of InP/Si bonding condition for optimizing Photoluminescence property by
Surface Activated Bonding based on Fast Atom BeamYuning Wang,*,1 Takuya Mitarai,1 Tomohiro Amemiya,1,2 Nobuhiko Nishiyama,1,2 and Shigehisa Arai1,2
1Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan, 2Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, Japan

MoP-E-1 (Poster)Spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature
Kengo Takase,*,1 Le Duc Anh,1,2 Kosuke Takiguchi,1 Nguyen Thanh Tu,1,3 and Masaaki Tanaka1,4
1Department of Electrical Engineering and Information Systems, The University of Tokyo, Japan, 2Institute of Engineering
Innovation, The University of Tokyo, Japan, 3Department of Physics, Ho Chi Minh City University of Pedagogy, Vietnam, Viet
Nam, 4Center for Spintronics Research Network (CSRN), The University of Tokyo, Japan

Compound Semiconductor Week 2019

May 20 (Mon)

MoP-E-2 (Poster)Heavily Fe-doped n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy
Thanh Tu Nguyen,*,1,2 Nam Hai Pham,3,4 Duc Anh Le,1,5 and Masaaki Tanaka1,4
1Department of Electrical Engineering & Information Systems, The University of Tokyo, Japan, 2Department of Physics, Ho
Chi Minh City University of Pedagogy, Japan, 3Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan, 4Center for Spintronics Research Network (CSRN), The University of Tokyo, Japan, 5Institute of Engineering
Innovation, The University of Tokyo, Japan

MoP-E-3 (Poster)Spin dependent transport properties(Ga,Fe)Sb/(In,Fe)As p-n junction

of

spin

bipolartransistors

using

a

Koki Chonan,*,1 Yuto Arakawa,1 Masaaki Tanaka,2,3 and Pham Nam Hai1,3
1Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan, 2Department of Electrical Engineering and Information System, The University of Tokyo, Japan, 3Center for Spintronics Research Network, The University ofTokyo, Japan

MoP-E-4 (Poster)Spin Detection in GaAs/AlGaAs Quantum Wells by Inverse Spin-Hall Eﬀect
Yuji Sakai,*,1 Tomoki Chatani,1 Tomohiro Nakagawa,1 Julian Ritzmann,2 Arne Ludwig,2 Andreas Wieck,2 and Akira Oiwa1
1ISIR, Osaka University, Japan, 2Ruhr University Bochum, Germany

MoP-E-5 (Poster)Real space imaging of the quantum-Hall incompressible states influenced by the strong
disorderYihao Wang,*,1 Katsushi Hashimoto,1,2 and Yoshiro Hirayama1,2,3
1Graduate school of Science, Tohoku University, Japan, 2Centre for Spintronics Research Network, Tohoku University, Japan,
3Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, Japan

MoP-E-6 (Poster)Spin Blockade and Magnetoresistance in Double Quantum Well Diode with Inverted Electric Field
Yoshiaki Hashimoto,* Tong Ke, Taketomo Nakamura, and Shingo Katsumoto
Institute for Solid State Physics, University of Tokyo, Japan

MoP-E-7 (Poster)Control of electron spin at spin-resolved quantum Hall edges
Takase Shimizu,* Yoshiaki Hashimoto, Taketomo Nakamura, Akira Endo, and Shingo Katsumoto
Institute for Solid State Physics, The University of Tokyo, Japan

MoP-E-8 (Poster)Spin-conserved electron transport to InGaAs quantum dots through GaAs/AlGaAs superlattice
Satoshi Hiura,*,1 Junichi Takayama,1 Takayuki Kiba,2 and Akihiro Murayama1
1GSIST, Hokkaido University, Japan, 2Kitami Institute of Technology, Japan

MoP-E-9 (Poster)Eﬀects of p-doping on excited spin states and the dynamics in InGaAs quantum dots
Shino Sato,*,1 Motoya Murakami,1 Yuto Nakamura,1 Satoshi Hiura,2 Junichi Takayama,2 and Akihiro Murayama2
1Faculty of Engineering, Hokkaido University, Japan, 2GSIST, Hokkaido University, Japan

Compound Semiconductor Week 2019

May 20 (Mon)

MoP-E-10 (Poster)Diﬀusive spin dynamics in 10 nm wide InGaAs/InAlAs quantum wells
Hiroki Shida,*,1 Yasuhito Saito,1 Kohei Kawaguchi,1 Ichirota Takazawa,1 Takahiro Kitada,3 Makoto Kohda,2 Yoshihiro
Ishitani,1 and Ken Morita1
1Graduate school of Electrical and Electronic Engineering, Chiba University, Japan, 2Department of Materials Science, Tohoku University, Japan, 3Graduate school of Technology, Industrial and Social Science, Tokushima University, Japan

MoP-E-11 (Poster)µm energy
Picosecond spin relaxation in GaSb/AlSb multiple quantum wells with a 1.55-µband gap
Yuichi Nakamura,*,1 Lianhe Li,2 Takuya Kamezaki,1 Kizuku Yamada,1 Edmund Linfield,2 and Atsushi Tackeuchi1
1Waseda Univ., Japan, 2Univ. of Leeds, United Kingdom

MoP-E-12 (Poster) - Late News -Simultaneous extraction of Rashba and Dresselhaus spin-orbit coeﬃcients in
GaAs/AlGaAs (110) two-dimensional electron gas
Daisuke Iizasa,*,1 Shu Kitamura,1 Dai Sato,1 Satoshi Iba,2 Yuzo Ohno,3 Shutaro Karube,1,4 Junsaku Nitta,1,4,5 and Makoto
Kohda1,4,5
1Department of Materials Science, Tohoku University, Japan, 2Spintronics Research Center, National Institute of Advanced
Industrial Science and Technology (AIST), Japan, 3Graduate School of Pure and Applied Sciences, University of Tsukuba,
Japan, 4Center for Spintronics Research Network, Tohoku University, Japan, 5Center for Science and Innovation in Spintronics(Core Research Cluster), Tohoku University, Japan

MoP-E-13 (Poster) - Late News -Topological semimetals in InAs/GaInSb superlattices at room temperature
Mikhail Patrashin,* Norihiko Sekine, Kouichi Akahane, Akifumi Kasamatsu, and Iwao Hosako
National Institute of Information and Communications Technology, Japan

MoP-F-1 (Poster)One-dimensional electronic states in highly-stacked InAs/GaAs quantum dot superlattices
Toshiyuki Kaizu* and Takashi Kita
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Japan

MoP-F-2 (Poster)

Lateral Photocurrent Spectroscopy of Stacked InAs QDs Layers in Embedded StrainRelaxed InGaAs Matrix
Naoto Kumagai,*,1,2 Xiangmeng Lu,3 Yasuo Minami,3 and Takahiro Kitada3
1AIST-NU GaN-OIL, AIST, Japan, 2ESPRIT, AIST, Japan, 3Graduate School of Technology, Tokushima Univ., Japan

MoP-F-3 (Poster)

GaSb/GaAs quantum nanostructures for intermediate band solar cell under high sunlight
concentration
Yusuke Oteki,*,1,2 Yasushi Shoji,3 Naoya Miyashita,1 Yilun He,1,2 and Yoshitaka Okada1,2
1RCAST, Univ. of Tokyo, Japan, 2School of Engineering, Univ. of Tokyo, Japan, 3AIST, Japan

MoP-F-4 (Poster)

AlGaAs/GaAs Heterostructure with Hybrid InSb/GaAs and GaSb/GaAs Quantum Dots
and Its Optical Characteristics
Thanadul Korkerdsantisuk,*,1 Katanyu Tharawatcharasart,1 Zon,1 Supachok Thainoi,1 Suwit Kiravittaya,2 Aniwat
Tandaechanurat,3 Noppadon Nuntawong,4 Suwat Sopitpan,5 Visittapong Yordsri,6 Chanchana Thanachayanont,6 Songphol
Kanjanachuchai,1 Somchai Ratanathammaphan,1 and Somsak Panyakeow1
1SDRL, Chulalongkorn University, Thailand, 2AOT Lab., Naresuan University, Thailand, 3ISE, Chulalongkorn University,
Thailand, 4NECTEC, NSTDA, Thailand, 5TMEC, NSTDA, Thailand, 6MTEC, NSTDA, Thailand

Compound Semiconductor Week 2019

May 20 (Mon)MoP-F-5 (Poster)

Photoluminescence Mapping Analysis of In-Plane Ultrahigh-Density InAs/GaAsSb
Quantum Dot Layers
Sho Tatsugi,* Ryo Sugiyama, and Koichi Yamaguchi
Department of Engineering Science, University of Electro-Communications, Japan

MoP-F-6 (Poster)Observation on Carrier Dynamics of Intermediate Band in Multi Stacked InGaAs Quantum Dots using Two Color Excitation
Keishiro Goshima,*,1 Norio Tsuda ,1 and Takeyoshi Sugaya2
1Aichi Institute of Technology , Japan, 2Advanced Industrial Science and Technology, Japan

MoP-F-7 (Poster)

Adsorbtion of Oxygen and Hydrogen Atoms on the GaAs(110) Surface
Dorothee Sophie Eckert,* Christian Bruckmann, Sam Baraz, and Holger Eisele
Institut für Festkörperphysik, Technische Universität Berlin, Germany

MoP-F-8 (Poster)Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSELGaëlle Brévalle,*,1 Salvatore Pes,1 Cyril Paranthoën,1 Mathieu Perrin,1 Christophe Levallois,1 Cyril Hamel,1 Alexandru
Mereuta,2 Andrei Caliman,2 Eli Kapon,2 Laurent Chusseau,3 Hervé Folliot,1 and Mehdi Alouini1
1Institut FOTON, France, 2Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne, Switzerland,
3IES, Université de Montpellier, France

MoP-F-9 (Poster)In situ synchrotron X-ray reciprocal space mapping during InGaN/GaN heterostructure
nanowire growth
Uesugi Tomohiro,*,1,2 Takuo Sasaki,1 Kanya Sugitani,1,2 and Masamitu Takahasi1,21National Institutes for Quantum and Radiological Science and Technology, Japan, 2University of Hyogo, Japan

MoP-F-10 (Poster)In situ study of strain and composition of InGaN/GaN multi-quantum-well nanowires
Kanya Sugitani,*,1,2 Takuo Sasaki,1 Uesugi Tomohiro,1,2 and Masamitu Takahasi1,21National Institutes for Quantum and Radiological Science and Technology, Japan, 2University of Hyogo, Japan

MoP-F-11 (Poster)Light-emitting InAs nanowires grown by MOVPE directly on flexible plastic substrates
Vladislav Khayrudinov,*,1 Tuomas Haggren,1 Maxim Remennyy,2 Prokhor Alekseev,2 Boris Matveev,2 and Harri Lipsanen1
1Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, FI-00076, Finland, 2Ioﬀe Institute,194021, St. Petersburg, Russia

MoP-F-12 (Poster)

InAs/GaSb Core-Shell Nanowires: Growth and Characterization
Mihail Ion Lepsa,*,1,4 Gunjan Nagda,2,4 Pujitha Perla,2,4 Nataliya Demarina,3,4 and Detlev Grützmacher1,2,4
1Peter Grünberg Institute (PGI-10), Forschungszentrum Jülich, Germany, 2Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, Germany, 3Peter Grünberg Institute (PGI-2), Forschungszentrum Jülich, Germany, 4Jülich Aachen Research
Alliance (JARA-FIT), Germany

Compound Semiconductor Week 2019

May 20 (Mon)MoP-F-13 (Poster)Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in
Wafer-Scale
Dong Pan* and Jianhua Zhao
Institute of Semiconductors, Chinese Academy of Sciences, China

MoP-F-14 (Poster)Integration of AlGaSb/GaSb Heterostructure and InSb/GaSb Quantum Nano-Stripes
Kiattisak Luangjarunrat,*,1 Zon,1 Supachok Thainoi,1 Suwit Kiravittaya,2 Aniwat Tandaechanurat,3 Noppadon
Nuntawong,4 Suwat Sopitpan,5 Visittapong Yordsri,6 Chanchana Thanachayanont,6 Songphol Kanjanachuchai,1 Somchai Ratanathammaphan,1 and Somsak Panyakeow1
1SDRL, Chulalongkorn University, Thailand, 2AOT Lab., Naresuan University, Thailand, 3ISE, Chulalongkorn University,
Thailand, 4NECTEC, NSTDA, Thailand, 5TMEC, NSTDA, Thailand, 6MTEC, NSTDA, Thailand

MoP-F-15 (Poster)

Epitaxial Lift-Oﬀ of Ultrathin Heterostructures for Hot-Carrier Solar Cell Applications
Maxime Giteau,*,1,4 Kentaroh Watanabe,1,4 Hassanet Sodabanlu,1,4 Naoya Miyashita,1,4 Masakazu Sugiyama,1,4 Andrea
Cattoni,2,4 Stéphane Collin,2,4 Jean-François Guillemoles,3,4 and Yoshitaka Okada1,4
1RCAST, The University of Tokyo, Japan, 2C2N, CNRS, University Paris-Sud/Paris-Saclay, France, 3CNRS, IPVF, UMR 9006,
France, 4NextPV, The University of Tokyo, Japan

MoP-F-16 (Poster)

Numerical Demonstration of Trade-oﬀ between Carrier Confinement Eﬀect and Carrier
Transport for Multiple-Quantum-Well Based High-eﬃciency InGaP Solar Cells
Hsiang-Hung Huang,* Kasidit Toprasertpong, Amaury Delamarre, Kentaroh Watanabe, Masakazu Sugiyama, and Yoshiaki
NakanoDepartment of Electrical Engineering and Information Systems, University of Tokyo, Japan

MoP-F-18 (Poster) - Late News -Chalcogen passivation of GaAs(111)B surfaces
Takayuki Suga,*,1 Shunji Goto,1 Akihiro Ohtake,2 and Jun Nakamura1
1Department of Engineering Science, The University of Electro-Communications (UEC-Tokyo), Japan, 2National Institute forMaterials Science, Japan

MoP-G-1 (Poster)

Performance Projection of 500V - 5kV AlGaAs/GaAs Vertical Polarization and Doped
Superjunction (PDSJ) Devices
Xiang Zhou* and T. Paul Chow
Rensselaer Polytechnic Institute, United States of America

MoP-G-2 (Poster)

Improved Electrical Degradation of AlInGaN/GaN HEMT by using Triethylgallium
Grown GaN channel and Cap
Indraneel Sanyal,*,1 Ting-Yu Hu,1 Yen-Chang Lee,1 En-Shuo Lin,1 and Jen-Inn Chyi1,2National Central University, Taiwan, 2Research Center for Applied Sciences,
Academia Sinica, Taiwan
1Department of Electrical Engineering,

MoP-G-3 (Poster)

Current Collapse Suppression by Silicon Substrate Removal Technique in AlGaN/GaN
HEMTYUEH-TING CHEN*,1 and JIAN-JANG HUANG1,2
1Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan, 2Department of Electrical Engineering, National Taiwan University, Taiwan

Compound Semiconductor Week 2019

May 20 (Mon)MoP-G-4 (Poster)

Impact of Lowering Threading Dislocation Density on Performances of Vertical GaN p-n
Junction Diodes
Hiroshi Ohta,*,1 Naomi Asai,1 Fumimasa Horikiri,2 Yoshinobu Narita,2 Takehiro Yoshida,2 and Tomoyoshi Mishima1
1Hosei University, Japan, 2SCIOCS Co. Ltd., Japan

MoP-G-5 (Poster)

Device characteristics and MIS interface evaluation of Al2O3/AlGaInN/AlGaN MIS
HFETSaki Saito,* Daiki Hosomi, Keita Furuoka, Heng Chen, Toshiharu Kubo, Takashi Egawa, and Makoto Miyoshi
Nagoya Institute of Technology, Japan

MoP-G-7 (Poster)Development of Hall Eﬀect Sensor on AlGaN/GaN FinFET Structure
Lili Huo,*,1,2 Yung C Liang,1,2 and Xiao Gong1
1National University of Singapore, Singapore, 2National University of Singapore (Suzhou) Research Institute, China

MoP-G-8 (Poster)N-polar GaN HEMT with Al2O3 gate insulator
Akihiro Hayasaka,*,1 Ryosuke Aonuma,1 Koushi Hotta,1 Isao Makabe,2 Shigeki Yoshida,2 and Yasuyuki Miyamoto1
1Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan, 2Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Japan

MoP-G-9 (Poster)

Characterization of Silicon Nitride Capping Dielectrics on AlGaN/GaN/Silicon Substrate
HEMT Structures with a Mercury Probe
Timothy Boles,*,1 Wayne Strubble,1 Gabriel Cueva,1 Robert Joseph Hillard,2 Win Ye,2 John Byrnes,2 and Jonny Hoglund2
1MACOM, United States of America, 2Semilabusa, United States of America

MoP-G-10 (Poster) - Late News -GaN-based Inverter by Monolithic Integration of Threshold Controlled MOSFETs
Hiroto Sekiguchi, Kiyomasa Miwa, Keisuke Yamane, Akihiro Wakahara, and Hiroshi Okada*
Toyohashi University of Technology, Japan

MoP-I-1 (Poster)

Turbostratic stacking eﬀect in multilayer graphene on the electrical transport properties
Ryota Negishi,*,1 Chaopeng Wei,1 Yui Ogawa,2 Masashi Akabori,3 Yoshikata Taniyasu,2 and Yoshihiro Kobayashi1
1Osaka university, Japan, 2NTT Basic Research Laboratories, Japan, 3JAIST, Japan

MoP-I-2 (Poster)Carbon nanowalls/diamond heterojunctions as novel photo-switching memory devices
Yuuta Imai,* Kenji Ueda, Hideharu Itou, Yuki Mizuno, and Hidefumi Asano
Graduate School of Engineering, Nagoya University, Japan

MoP-I-3 (Poster)

The underlying signatures of the spin- and momentum-forbidden dark exciton states inthe temperature-dependent photoluminescences from WSe2 monolayers
Guan-Hao Peng,*,1 Ping-Yuan Lo,1 Wei-Hua Li,1 Yan-Chen Huang,1 Yan-Hong Chen,1 Chi-Hsuan Lee,2 Chih-Kai Yang,2 andShun-Jen Cheng1
1Department of Electrophysics, National Chiao Tung University, Taiwan, 2Graduate Institute of Applied Physics, National
Chengchi University, Taiwan

Compound Semiconductor Week 2019

May 20 (Mon)

MoP-I-5 (Poster)

Fabrication of Transparent Solar Cell with Atomically Thin Layered Materials
Xing He,*,1 Yoshiki Yamaguchi,1 Toshiro Kaneko,1 and Toshiaki Kato1,2
1Department of Electronic Engineering, Tohoku University, Japan, 2JST-PRESTO, Japan

MoP-I-6 (Poster)

Improvement of External Quantum Eﬃciency of C60/ZnPc Organic Photovoltaic Cells by
Polymerization between C60 molecules
Yuki Matoba,*,1 Masahiro Kato,1 Shinta Watanabe,1 Koichi Okamoto,2 Masato Nakaya,1 and Jun Onoe1
1Graduate School of Engineering, Nagoya University, Japan, 2Graduate School of Engineering, Osaka Prefecture University,Japan

MoP-I-7 (Poster)

Bio-sensing of small peptides by open sandwich immunoassay on graphene FETs
Yasusshi Kanai,*,1 Yuki Ohmuro-Matsuyama,2 Masami Tanioku,1 Shota Ushiba,3 Takao Ono,1 Kouichi Inoue,1 Masahiko
Kimura,3 Hiroshi Ueda,2 and Kazuhiko Matsumoto1
1 ISIR Osaka University, Japan, 2Lab. Chem. Life Sci., Tokyo Institute of Technology, Japan, 3Murata Mfg„ Japan

MoP-I-9 (Poster)Chemical vapor deposition growth of boron incorporated graphitic carbon nitride film
for carbon based semiconductor systems
Noriyuki Urakami,*,1,2 Maito Kosaka,1 and Yoshio Hashimoto1,2
1Shinshu Univ., Japan, 2 Inst. of Carbon and Tech., Japan

MoP-I-10 (Poster)High stability of the epitaxial graphene film on SiC substrate
Takaya Kujime,* Yoshiaki Taniguchi, Daiu Akiyama, Yusuke Kawamura, Yasuhide Ohno, and Masao Nagase
Graduate School of Advanced Technology and Science, Tokushima University, Japan

MoP-I-11 (Poster)

Physical vapor transport growth of trigonal selenium crystal
Yuichiro Suzuki,*,1 Noriyuki Urakami,1,2 and Yoshio Hashimoto1,2
1Shinshu University, Japan, 2Institute of Carbon Science and Technoligy, Japan

MoP-I-13 (Poster) - Late News -High-Frequency Nanomechanical Resonator in a Ballistic Graphene p-n Junction
Minkyung Jung,*,1,2 Peter Rickhaus,2,3 Simon Zihlmann,2 Alexander Eichler,3 Peter Makk,2,4 and Christian Schönenberger2
1DGIST Research Institute, DGIST, Republic of Korea, 2Department of Physics, University of Basel, Switzerland, 3Institute for
Solid State Physics, ETH, Switzerland, 4Department of Physics, Budapest University of Tech. and Econ., HungaryCompound Semiconductor Week 2019

May 21 (Tue)May 21 (Tue)

TuA1

Nanomechanics, Thermal and Phonon Transport

Room A

08:30-10:30

Chair: Minoru Kawamura and Hiroshi Yamaguchi

TuA1-1 (Oral)

08:30 - 08:45

Nonlinear Acoustic Dynamics in Nanoelectromechanical Waveguides
Megumi Kurosu,*,1,2 Daiki Hatanaka,1 and Hiroshi Yamaguchi1,2
1NTT Basic Research Laboratories, NTT Corporation, Japan, 2Department of Physics, Tohoku University, Japan

TuA1-2 (Oral)

08:45 - 09:00

An AlGaAs/GaAs Mechanical Mode-Locked Cavity
Samer Houri,* Daiki Hatanaka, Ryuichi Ohta, Motoki Asano, and Hiroshi Yamaguchi
NTT-Basic Research Laboratories, Japan

TuA1-3 (Oral)

09:00 - 09:15

Thermoelectric Transport in GaAs-AlGaAs Core-Shell Modulation-Doped Nanowires
Sergej Fust,* Jonathan Becker, Damon James Carrad, Dominik Irber, Jakob Seidl, Anton Faustmann, Bernhard Loitsch, Gerhard Abstreiter, Jonathan James Finley, and Gregor Koblmueller
Walter Schottky Institute and Physics Department, TU Munich, Germany

TuA1-4 (Oral)

09:15 - 09:30

Quasi-ballistic thermal phonon transport in nanostructured Si nanowires
Masahiro Nomura*,1,2 and Roman Anufriev1
1University of Tokyo, Japan, 2PRESTO JST, Japan

TuA1-5 (Oral)

09:30 - 09:45

Semi-ballistic thermal phonon transport in Si1-xGex nanowires
Noboru Okamoto,1 Ryoto Yanagisawa,1 Md. Mahfuz Alam,2 Kentarou Sawano,2 Masashi Kurosawa,3,4 and Masahiro
Nomura*,1,4
1Univ. of Tokyo, Japan, 2Tokyo City Univ., Japan, 3Nagoya Univ., Japan, 4PRESTO, JST, Japan

TuA1-6 (Oral)

09:45 - 10:00

Control of absorption properties of MEMS terahertz bolometers using metamaterials
Tianye Niu,*,1 Boqi Qiu,1 Ya Zhang,2 and Kazuhiko Hirakawa1,3
1Institute of Industrial Science, University of Tokyo, Japan, 2Tokyo University of Agriculture and Technology, Japan, 3Institutefor Nano Quantum Information Electronics, University of Tokyo, Japan

TuA1-7 (Oral)

10:00 - 10:15

Magnetic anisotropy switching in heavily-Fe-doped high-Curie-temperature ferromagnetic semiconductor (Ga0.7,Fe0.3)Sb with a critical thickness
Shobhit Goel,*,1 Le Duc Anh,1,2 Nguyen Thanh Tu,1 Shinobu Ohya,1,2,3 and Masaaki Tanaka1,3
1Department of Electrical Engineering & Information Systems, The University of Tokyo, Japan, 2Institute of Engineering
Innovation, The University of Tokyo, Japan, 3Center for Spintronics Research Network (CSRN), The University of Tokyo,

JapanCompound Semiconductor Week 2019

May 21 (Tue)

TuA1-8 (Oral)

10:15 - 10:30

Multi-band valley-protected topological edge states in GaAs-based nanophononic crystals
with complete phononic bandgaps
Ingi Kim,1 Zhaoyin Sun,1 Yasuhiko Arakawa,2 and Satoshi Iwamoto*,1,2
1Institute of Industrial Science, The University of Tokyo, Japan, 2Institute for Nano Quantum Information Electronics, The
University of Tokyo, JapanTuB1

GaN MOS Power FETs

Room B

08:30-10:30

Chair: Tetsu Kachi and Toshikazu Suzuki

TuB1-1 (Invited)

08:30 - 09:00

Improvement of channel mobility and reliability in GaN-MOSFETs
Masahiko Kuraguchi,* Yosuke kajiwara, Daimotsu Kato, Toshiki Hikosaka, Hiroshi Ono, Aya Shindome, Akira Mukai, andShinya Nunoue
Corporate Research & Development Center, Toshiba Corporation, Japan

TuB1-3 (Invited)

09:00 - 09:30

High-performance nanowire-based E-mode Power GaN MOSHEMTs
Luca Nela,* Minghua Zhu, Jun Ma, and Elison Matioli
POWERLAB, IEL, STI, École Polytechnique Fédéral de Lausanne (EPFL) , Switzerland

TuB1-5 (Oral)

09:30 - 09:45

Switching and HTRB characteristics of Highly reliable GaN MOS-HFET
Shinichi Hoshi,* Kensuke Hata, Youngshin Eum, and Kazuki Arakawa
Sensor & Semiconductor Process R&D Div., DENSO CORPORATION, Japan

TuB1-6 (Oral)

09:45 - 10:00

Threshold voltages of AlGaN/GaN metal-insulator-semiconductor devices with AlN or
Al2O3 gate insulators
Hirotomo Demura,* Yuchen Deng, Duong Dai Nguyen, and Toshi-kazu Suzuki
Japan Advanced Institute of Science and Technology, Japan

TuB1-7 (Oral)

10:00 - 10:15

Improved insulator/semiconductor interfaces in Al2O3/AlGaN/GaN structures by AlGaN
layer regrowth
Shinsaku Kawabata,* Joel Tacla Asubar, Hirokuni Tokuda, Akio Yamamoto, and Masaaki Kuzuhara
University of Fukui, Japan

TuB1-8 (Oral) - Late News -10:15 - 10:30

1.2 kV regrown GaN vertical p-n power diodes with ultra low leakage using advanced
materials engineering
Kai Fu,1 Houqiang Fu,1 Hanxiao Liu,2 Shanthan Reddy Alugubelli,2 Xuanqi Huang,1 Hong Chen,1 Tsung-Han Yang,1 Jossue
Montes,1 Chen Yang,1 Jingan Zhaou,1 Fernando A. Ponce,2 and Yuji Zhao*,1
1School of Electrical, Computer and Energy Engineering, Arizona State University, United States of America, 2Department of
Physics, Arizona State University, United States of America

Compound Semiconductor Week 2019

TuC1

Growth and Sensor of 2D Materials

May 21 (Tue)Room C

08:30-10:30

Chair: Tomoki Machida and Deep Jariwala

TuC1-1 (Oral)

08:30 - 08:45

Elimination of photothermal eﬀect on nano-mechanical resonator consisting of opticallytransparent h-BN sheet
Daiki Yoshikawa, Kuniharu Takei, Takayuki Arie, and Seiji Akita*
Department of Physics and Electronics, Osaka Prefecture University, Japan

TuC1-2 (Oral)

08:45 - 09:00

Persistent resonance frequency shift of MoS2 mechanical resonator by laser irradiation
Taichi Inoue,*,1 Takahiko Endo,2 Kuniharu Takei,1 Takayuki Arie,1 Yasumitsu Miyata,2 and Seiji Akita1
1Osaka prefecture University, Japan, 2Tokyo Metropolitan University, Japan

TuC1-3 (Oral)

09:00 - 09:15

1-aminopyrene-modified epitaxial graphene device for pH sensors
Yasuhide Ohno,* Takanori Mitsuno, Yoshiaki Taniguchi, and Masao Nagase
Tokushima University, Japan

TuC1-4 (Oral)

09:15 - 09:30

Influence of DNA Sequences on Gas Responses Using DNA-modified Graphene Devices
Ryo Nozaki,* Takashi Ikuta, Kinuko Ueno, Kaori Tsukakoshi, Kazunori Ikebukuro, and Kenzo Maehashi
Institute of Engineering, Tokyo University of Agriculture and Technology, Japan

TuC1-5 (Invited)

09:30 - 10:00

Emergent transport phenomena in MBE-grown 2D materials and their heterostructures
Masaki Nakano*,1 and Yoshihiro Iwasa1,2
1QPEC and Department of Applied Physics, the University of Tokyo, Japan, 2RIKEN Center for Emergent Matter Science(CEMS), Japan

TuC1-7 (Oral)

10:00 - 10:15

Integrated synthesis of graphene nanoribbon-based field eﬀect transistor with high on/oﬀ
ratio
Noritada Ogura,*,1 Hiroo Suzuki,1 Toshiro Kaneko,1 and Toshiaki Kato1,2
1Department of Electronic Engineering,Tohoku University, Japan, 2JST-PRESTO, Japan

TuC1-8 (Oral)

10:15 - 10:30

Expansion of Solid-phase Interactions between Carbon and Metals: Layer Exchange forMultilayer Graphene on Insulator
Yoshiki Nakajima,* Hiromasa Murata, Takashi Suemasu, and Kaoru Toko
University of Tsukuba, Japan

TuD1

Ga2O3 Bulk and Epitaxial GrowthRoom D

08:30-10:30

Chair: Yoshinao Kumagai and Gregg Jessen

TuD1-1 (Invited)

Halide Vapor Phase Epitaxy of α -Ga2O3
Yuichi Oshima
National Institute for Materials Science, Japan

08:30 - 09:00

Compound Semiconductor Week 2019

May 21 (Tue)

TuD1-3 (Oral)

09:00 - 09:15

Investigation of Fe incorporation in (010) β -Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Akhil Mauze,* Yuewei Zhang, Tom Mates, and James Speck
Materials Department, University of California, Santa Barbara, United States of America

TuD1-4 (Oral)

09:15 - 09:30(010) β -Ga2O3 Metal Oxide Catalyzed Epitaxy (MOCATAXY) growth and Sn doping inplasma-assisted molecular beam epitaxy
Akhil Mauze,* Yuewei Zhang, and James Speck
Materials Department, University of California, Santa Barbara, United States of America

TuD1-5 (Oral)

09:30 - 09:45

High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition withNO PlasmaJung-Soo Lee,1 Ryo Wakabayashi,1 Takumi Saito,1 Kohei Yoshimatsu,1 Motohisa Kado,2 and Akira Ohtomo*,1,3
1Department of Chemical Science and Engineering, Tokyo Institute of Technology , Japan, 2Toyota Motor Corporation, Japan,
3MCES, Tokyo Institute of Technology , Japan

TuD1-6 (Oral)

09:45 - 10:00

Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of
Homoepitaxial β -Ga2O3 Grown by MOVPE
Saud Bin Anooz,* Andreas Popp, Raimund Grüneberg, Andreas Fiedler, Klaus Irmscher, Robert Schewski, Martin Albrecht,
Zbigniew Galazka, and Günter Wagner
Leibniz-Institut für Kristallzüchtung, Germany

TuD1-7 (Oral)

10:00 - 10:15

Growth of Ga2O3 Regular Column Structures by Halide Vapour Phase Epitaxy: α - andϵ - phase Relation
Vladimir Nikolaev,*,1,2 Aleksei Pechnikov,1,2 Vasilii Nikolaev,1 Mihail Sheglov,2 Andrey Chikiryaka,2 and Sergey Stepanov1,2
1Perfect Crystals LLC, Russia, 2Ioﬀe Institute, Russia

TuD1-8 (Oral)

10:15 - 10:30

Synchrotron X-Ray Topography Observation and Classification of Dislocations in β Ga2O3 single crystal substrates grown by EFG
Yongzhao YAO,*,1 Yoshihiro SUGAWARA,1 Yukari ISHIKAWA,1 Yumiko TAKAHASHI,2 and Keiichi HIRANO3
1Japan Fine Ceramics Center, Japan, 2Nihon University, Japan, 3High Energy Accelerator Research Organization, Japan

TuE1

hBN : Growth I

Room E

08:30-10:30

Chair: Guillaume Cassabois and Kenji Watanabe

TuE1-1 (Invited)

08:30 - 09:00

Atmospheric Pressure Solution Growth of Monoisotopic Hexagonal Boron Nitride
James Howard Edgar,*,1 Jiahan Li,1 Song Liu,1 Chao Yuan,2 Martin Kuball,2 Christine Elias,3 T.Q.P. Vuong,3 GuillaumeCassabois,3 and Bernard Gil3
1Kansas State University, United States of America, 2University of Bristol, United Kingdom, 3Université de Montpellier, FranceCompound Semiconductor Week 2019

May 21 (Tue)

TuE1-3 (Oral)

09:00 - 09:15

Impurity and isotope control of cubic and hexagonal boron nitride crystals under solution
growth process
Takashi Taniguchi
National Institute for Materials Science, Japan

TuE1-4 (Oral)

09:15 - 09:30

Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
Soo Min Kim
Korea Institute of Science and Technology, Republic of Korea

TuE1-5 (Invited)

09:30 - 10:00

High-temperature Plasma-assisted Molecular Beam Epitaxy of hBN Layers
T. S. Cheng,1 A. Summerfield,1 C. J. Mellor,1 G. Cassabois,2 B. Gil,2 L. Eaves,1 C. T. Foxon,1 P. H. Beton,1 and S. V. Novikov*,1
1School of Physics and Astronomy, University of Nottingham, Nottingham, United Kingdom, 2Laboratoire Charles Coulomb,

CNRS-Université de Montpellier, Montpellier, France

TuE1-7 (Oral)

10:00 - 10:15

Low temperature growth of h-BN on graphene via molecular beam epitaxy
Martin Heilmann,*,1 Alexander S. Prikhodko,2 Michael Hanke,1 Muhammad Y. Bashouti,3 Nikolai I. Borgardt,2 Henning
Riechert,1 and Marcelo J. Lopes1
1Paul-Drude-Institut für Festkörperelektronik, Germany, 2National Research University of Electronic Technology, Russia,
3Ben-Gurion University of the Negev, Israel

TuE1-8 (Oral)

10:15 - 10:30

Ultra-high Temperature Growth of Layered Hexagonal Boron Nitride on Sapphire by
Molecular Beam Epitaxy
Ryan Lowry Page,*,1 Yongjin Cho,2 Joseph Casamento,1 Sergei Rouvimov,3 Huili Grace Xing,1,2,4 and Debdeep Jena1,2,4
1Department of Materials Science and Engineering, Cornell University, United States of America, 2School of Electrical andComputer Engineering, Cornell University, United States of America, 3Department of Electrical Engineering, University ofNotre Dame, United States of America, 4Kavli Institute at Cornell for Nanoscale Science, United States of America

Coffee Break

TuA2

10:30 - 11:00

Superconductor-Semiconductor Hybrid Structures Room A

11:00-12:30

Chair: Koji Ishibashi and Hongqi Xu

TuA2-1 (Invited)

11:00 - 11:30

Superconductor/Semiconductor Devices for Majorana Zero Modes
Antonio Fornieri,1 Alexander M. Whiticar,1 F. Setiawan,2 Elias Portoles Marin,1 Asbjørn C. C. Drachmann,1 Anna Keselman,3Sergei Gronin,4,5 Candice Thomas,4,5 Tian Wang,4,5 Ray Kallaher,4,5 Geoﬀrey C. Gardner,4,5 Erez Berg,2,6 Michael J.
Manfra,4,5,7,8 Ady Stern,6 Charles M. Marcus,1 and Fabrizio Nichele*,1
1University of Copenhagen and Microsoft Quantum Lab Copenhagen, Denmark, 2James Franck Institute, The University of
Chicago, United States of America, 3Microsoft Research, United States of America, 4Department of Physics and Astronomy
and Microsoft Quantum Lab Purdue, Purdue University, United States of America, 5Birck Nanotechnology Center, Purdue University, United States of America, 6Department of Condensed Matter Physics, Weizmann Institute of Science, Ireland, 7Schoolof Materials Engineering, Purdue University, United States of America, 8School of Electrical and Computer Engineering,Purdue University, United States of America

Compound Semiconductor Week 2019

May 21 (Tue)

TuA2-3 (Oral)

11:30 - 11:45

Towards semiconductor-superconductor hybrid qubits based on InAs/Al core/shell
nanowires
Patrick Zellekens,*,1,2 Russell Deacon,4,5 Steﬀen Schlör,3 Pujitha Perla,1,2 Patrick Liebisch,1,2 Benjamin Bennemann,1,2 Mihail
Lepsa,1,2 Martin Weides,3 Koji Ishibashi,4,5 Detlev Grützmacher,1,2 and Thomas Schäpers1,2
1 Peter Grünberg Institute, Forschungszentrum Jülich, Germany, 2 JARA-FIT, Fundamentals of Future Information Technology,
Germany, 3 Karlsruhe Institute of Technology, Germany, 4RIKEN Center for Emergent Matter Science, Japan, 5Advanced
Device Laboratory, RIKEN, Japan

TuA2-4 (Oral)

11:45 - 12:00

The Josephson eﬀect in InAs quantum wells with the spin Hall eﬀect
Taketomo Nakamura,* Yoshiaki Hashimoto, and Shingo Katsumoto
Institute for Solid State Physics, The University of Tokyo, Japan

TuA2-5 (Oral)

12:00 - 12:15

Observation of a.c. Josephson eﬀect in gate tunable Josephson junction on topologicalinsulator (Bi0.2Sb0.8)2Te3 films
Yuusuke Takeshige,*,1 Sadashige Matsuo,1,2 Russell Stewart Deacon,3,4 Kento Ueda,1 Yosuke Sato,1 Yi-Fan Zhao,5 Ling
Zhang,5 Cui-Zu Chang,5 Koji Ishibashi,3,4 and Seigo Tarucha1,4
1Department of Applied Physics, University of Tokyo, Japan, 2PRESTO, Japan Science and Technology Agency (JST), Japan,
3Advanced Device Laboratory, RIKEN, Japan, 4Center for Emergent Matter Science, RIKEN, Japan, 5Department of Physics,
The Pennsylvania State University, United States of America

TuA2-6 (Oral)

12:15 - 12:30

Superconductor connection to InAs two-dimensional electrons with accumulation edges
Makoto Onizaki,* Yoshiaki Hashimoto, Taketomo Nakamura, and Shingo Katsumoto
Institute for Solid State Physics, University of Tokyo, Japan

TuB2

Quantum Dot Lasers

Room B

11:00-12:30

Chair: Johann Peter Reithmaier and Masahiro Nada

TuB2-1 (Invited)

11:00 - 11:30

Multi-wavelength DFB laser array in InAs/GaAs quantum dot material epitaxially grownon Silicon
Siyuan Yu,*,1 Huiyun Liu,3 Ying Yu,2 and Yi Wang2
1University of Bristol, United Kingdom, 2Sun Yat-sen University, China, 3University College London, United Kingdom

TuB2-3 (Oral)

11:30 - 11:45

InAs/InP QD and InGaAsP/InP QW comb lasers for > 1 Tb/s transmission
Marlene Zander,*,1 Wolfgang Rehbein,1 Martin Möhrle,1 Steﬀen Breuer,1 Dieter Franke,1 and Dieter Bimberg2,3
1Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute, Germany, 2“Bimberg Chinese-German Center forGreen Photonics“, CAS at CIOMP, China, 3Center of Nanophotonics, Institute of Solid State Physics, TU Berlin, Germany

TuB2-4 (Oral)

11:45 - 12:00

1545 µ m Quantum Dot Vertical Cavity Surface Emitting Laser with low threshold
Cyril Paranthoen,*,1 Christophe Levallois,1 Nicolas Chevalier,1 Alain Le Corre,1 Gaelle Brevalle,1 Mathieu Perrin,1 Karine
Tavernier,1 Herve Folliot,1 and Mehdi Alouini2
1Univ Rennes, INSA Rennes, CNRS, Institut FOTON, France, 2Univ Rennes,Université de Rennes 1, CNRS, Institut FOTON,FranceCompound Semiconductor Week 2019

May 21 (Tue)

TuB2-5 (Oral)

12:00 - 12:15

Relative intensity noise of silicon-based quantum dot lasers
Jianan Duan,*,1 Heming Huang,1 Daehwan Jung,2 Justin C. Norman,2,3 John E. Bowers,2,3,4 and Frédéric Grillot1,5
1LTCI, Télécom ParisTech, France, 2Institute for Energy Eﬃciency, University of California Santa Barbara, United States ofAmerica, 3Materials Department, University of California Santa Barbara, United States of America, 4Department of Electricaland Computer Engineering, University of California Santa Barbara, United States of America, 5Center for High Technology
Materials, University of New-Mexico, United States of America

TuB2-6 (Oral)

12:15 - 12:30µm single mode InAs/InP quantum
Thermal dependence of the emission linewidth of 1.52-µ
dot lasers
Jianan Duan,*,1 Bozhang Dong,1 Heming Huang,1 Zhenguo Lu,2 Philip Poole,2 and Frédéric Grillot1,3
1LTCI, Telecom ParisTech, France, 2Advanced Electronics and Photonics Research Centre, NRC Canada, Canada, 3Centerfor High Technology Materials, University of New-Mexico, United States of America

TuB2-7 (Oral)

12:30 - 12:45

Sub-50 kHz Linewidth 1.55 µ m Quantum Dot Distributed Feedback Lasers
Annette Becker,1 Tali Septon,2 Sutapa Gosh,2 Gal Shtendel,2 Vitalii Sichkovskyi,1 Florian Schnabel,1 Anna Sengül,1 Marko
Bjelica,3 Bernd Witzigmann,3 Gadi Eisenstein,2 and Johann Peter Reithmaier*,11Technische Physik, Institute of Nanostructure Technologies and Analytics, CINSaT, University of Kassel, Germany, 2ElectricalEngineering Department and Russell Barrie Nanotechnology Institute, Technion - Israel Institute of Technology, Israel,
3Computational Electronics and Photonics Group, CINSaT, University of Kassel, Germany

TuC2

RF and on-Si Technology

Room C

11:00-12:30

Chair: Yuichi Oshima and Huili Grace Xing

TuC2-1 (Invited)

11:00 - 11:30

GaN HEMT Characterization for Base Stations
Hiroshi Yamamoto,* Ken Kikuchi, and Norihiko Ui
Sumitomo Electric Industries, Ltd., Japan

TuC2-3 (Oral)

11:30 - 11:45

InAlN-MIS-HEMTs with High Fmax on Si Substrates
Tomohiro Yoshida,*,1 Yoshimi Yamashita,2 Isao Makabe,1 Issei Watanabe,2 Akifumi Kasamatsu,2 Ken Nakata,1 and Kazutaka
Inoue1
1Sumitomo Electric Industries, Ltd., Japan, 2National Institute of Information and Communications Technology, Japan

TuC2-4 (Oral)

11:45 - 12:00

High Frequency Characteristics of AlInGaN HEMTs on Low Resistance Silicon for
Millimeter-Wave Applications
Indraneel Sanyal,*,1 En-Shuo Lin,1 Yu-Chen Wan,1 and Jen-Inn Chyi1,2
1Department of Electrical Engineering, National Central University, Taiwan, 2Research Center for Applied Sciences,
Academia Sinica, Taiwan

TuC2-5 (Oral)

12:00 - 12:15

Ka band LNA and PA based on 100 nm GaN/Si HEMT process
XIAODONG TONG,*,1,2 SHIYONG ZHANG,1,2 PENGHUI ZHENG,1,2 JIANXING XU,1,2 and RONG WANG1,2
1Microsystem and Terahertz Research Center, China Academy of Engineering Physics, China, 2Institute of Electronic Engineering, China Academy of Engineering Physics, China

Compound Semiconductor Week 2019

May 21 (Tue)

TuC2-6 (Oral)

12:15 - 12:30

Eﬀects of thermal annealing on film quality of InAs-On-Insulator structures fabricatedby Smart Cut method
Kei Sumita,* Jun Takeyasu, Kimihiko Kato, Mitsuru Takenaka, and Shinichi Takagi
Department of Electrical Engineering and Information Systems, The University of Tokyo, Japan

TuD2

Ga2O3 Process and Characterization

Room D

11:00-12:30

Chair: Julien Barjon and James Edgar

TuD2-1 (Oral)

11:00 - 11:15

On the Surface Properties of High Aspect Ratio β -Ga2O3 Fin Structures Formed by IMacEtch
Hsien-Chih Huang,1 Munho Kim,1 Xun Zhan,2 Kelson Chabak,3 Jeongdong Kim,1 Jian-min Zuo,2 and Xiuling Li*,1
1Electrical and Computer Engineering Department, University of Illinois, United States of America, 2Materials Science andEngineering Department, University of Ilinois, United States of America, 3Air Force Research Laboratory, Sensors Directorate
at WPAFB, United States of America

TuD2-2 (Oral)

11:15 - 11:30

Observation of Electroreflectance Spectra of β -Ga2O3 Single Crystal
Takeyoshi Onuma,*,1,2 Kouya Tanaka,1 Kohei Sasaki,3 Tomohiro Yamaguchi,1 Tohru Honda,1 Akito Kuramata,3 Shigenobu
Yamakoshi,4 and Masataka Higashiwaki2
1Department of Applied Physics, Kogakuin University, Japan, 2National Institute of Information and Communications Technology, Japan, 3Novel Crystal Technology Inc., Japan, 4Tamura Corporation, Japan

TuD2-3 (Oral)

11:30 - 11:45

Suppression of Parallel Conduction at the Interface in β -Ga2O3 Homoepitaxial Layer
Using Semi-Insulating Intermediate Layer
Takumi Saito,*,1 Ryo Wakabayashi,1 Jung-Soo Lee,1 Kaisei Kamei,1 Kohei Yoshimatsu,1 Motohisa Kado,2 and Akira
Ohtomo1,3
1Department of Chemical Science and Engineering, Tokyo Institute of Technology, Japan, 2Toyota Motor Corporation, Japan,
3MCES, Tokyo Institute of Technology, Japan

TuD2-4 (Oral)

11:45 - 12:00

Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped
Ga2O3 Films on (2 01) β -Ga2O3 by Laser Molecular Beam Epitaxy
Xuanhu Chen,* Jiandong Ye, Shulin Gu, Rong Zhang, and Youdou Zheng
Nanjing University, China

TuD2-5 (Invited)

12:00 - 12:30

β -Ga2O3 MOSFETs with Nitrogen-Ion-Implanted Back-Barrier: DC Performance andTrapping Eﬀects
Man Hoi Wong,*,1 Ken Goto,2 Hisashi Murakami,2 Yoshinao Kumagai,2 and Masataka Higashiwaki1
1National Institute of Information and Communications Technology, Japan, 2Department of Applied Chemistry, Tokyo Univer-sity of Agriculture and Technology, Japan

Compound Semiconductor Week 2019

TuE2

hBN : Point Defects

May 21 (Tue)Room E

11:00-12:30

Chair: Di Liang and Hideki Yagi

TuE2-1 (Invited)

11:00 - 11:30

Spin-dependent quantum emission from defects in hexagonal boron nitride
Lee Bassett
Quantum Engineering Laboratory, Department of Electrical & Systems Engineering, University of Pennsylvania, United Statesof America

TuE2-3 (Oral)

11:30 - 11:45

Hexagonal Boron Nitride Nanophotonics
Hanh Duong
University of Technology Sydney, Australia

TuE2-5 (Oral)

12:00 - 12:15

Pressure characters of defects in hexagonal boron nitride flakes
baoquan sun,* Yongzhou xue, and xiuming dou
Institute of Semiconductors, Chinese Academy of Sciences, China

TuE2-6 (Oral)

12:15 - 12:30

Enhanced Super-Resolution Imaging of Quantum Emitters in Hexagonal Boron Nitride
Mehran Kianinia,*,1 Carlo Bradac,1 Bernd Sontheimer,2 Fan Wang,1 Toan Trong Tran,1 Minh Nguyen,1 Sejeong Kim,1 ZaiQuan Xu,1 Dayong Jin,1 Andreas W. Schell,3 Charlene Lobo,1 Igor Aharanovich,1 and Milos Toth1
1School of Mathematical and Physical Sciences, University of Technology Sydney, Australia, 2Institut für Physik, HumboldtUniversität zu Berlin, Germany, 3Department of Electronic Science and Engineering, Kyoto University, Japan

Lunch Break

TuA3

Advanced Photonic Integration

12:30 - 14:00

Room A

14:00-16:15

Chair: Di Liang and Hideki Yagi

TuA3-1 (Invited)

14:00 - 14:30

Ultra-low Noise Widely-Tunable Semiconductor Lasers Fully Integrated on Silicon
Minh A. Tran,*,1 Duanni Huang,1 Joel Guo,1 Jon Peters,1 Tin Komljenovic,1 Paul A. Morton,2 Jacob B. Khurgin,2 Christopher
C. Morton,2 and John E. Bowers1
1Dept. of Electrical and Computer Engineering, University of California Santa Barbara, United States of America, 2Morton
Photonics Inc., United States of America

TuA3-3 (Oral)

14:30 - 14:45

Investigation of optical loss and bandwidth of InP-organic hybrid optical modulator
Naoki Sekine,* Shinichi Takagi, and Mitsuru Takenaka
The University of Tokyo, Japan

TuA3-4 (Oral)

14:45 - 15:00

Equivalent oxide thickness scaling for eﬃcient III-V/Si hybrid MOS optical phase shifter
Qiang Li,*,1 Jae-Hoon Han,1,2 Tsung-En Lee,1 Shinichi Takagi,1 and Mitsuru Takenaka1
1University of Tokyo, Japan, 2Korean Institute of Science and Technology, Republic of Korea

Compound Semiconductor Week 2019

May 21 (Tue)

TuA3-5 (Oral)

15:00 - 15:15

Numerical Analysis of III-V/Si Hybrid MOS Microdisk Modulator
Shuhei Ohno,* Shinichi Takagi, and Mitsuru Takenaka
Department of Electrical Engineering and Information Systems, The University of Tokyo , Japan

TuA3-6 (Oral)

15:15 - 15:30

Taper Length Dependence of Double-Taper-Type Coupler for GaInAsP/SOI Hybrid Integrated Platform
Takayuki Miyazaki,*,1 Fumihito Tachibana,1 Takehiko Kikuchi,1,3 Takuo Hiratani,3 Hideki Yagi,3 Moataz Eissa,1 Takuya
Mitarai,1 Tomohiro Amemiya,1,2 Nobuhiko Nishiyama,1,2 and Shigehisa Arai1,2
1Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan, 2Institute of Innovative Research (IIR),
Tokyo Institute of Technology, Japan, 3Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Japan

TuA3-7 (Invited)

15:30 - 16:00

InP membrane lasers and active-passive integration
Yuqing Jiao,* Vadim Pogoretskii, Jorn van Engelen, Niall Kelly, and Jos van der Tol
Institute for Photonic Integration (IPI), Eindhoven University of Technology, Netherlands

TuA3-9 (Oral) - Late News -16:00 - 16:15

Highly eﬃcient and fabrication-tolerant InP polarization rotator-splitter
Shahram Keyvaninia,1 Hendrik Boerma,1 Markus Wössner,2 Felix Ganzer,1 Patrick Runge,*,1 and Martijn Schell1
1Fraunhofer Heinrich-Hertz-Institut, Germany, 2Robert Bosch GmbH, Germany

TuB3

Epitaxial Growth on Group IV Substrates

Room B

14:00-16:00

Chair: Yosuke Shimura and D. Scott Katzer

TuB3-1 (Invited)

14:00 - 14:30

Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanced Ge Gate All AroundDevicesRoger Loo,*,1 Anurag Vohra,1,2 Clement Porret,1 Andriy Hikavyy,1 Erik Rosseel,1 Marc Schaekers,1 Elena Capogreco,1 Yosuke
Shimura,1,2,3 David Kohen,4 John Tolle,4 and Wilfried Vandervorst1,2
1Imec, Belgium, 2KU Leuven, Department of Physics, Belgium, 3Graduate School of Integrated Science and Technology,
Shizuoka University , Japan, 4ASM, United States of America

TuB3-3 (Invited)

14:30 - 15:00

Formation and Characterization of Si Quantum Dots with Ge Core for Electroluminescent Devices
Katsunori Makihara,* Mitsuhisa Ikeda, Akio Ohta, and Seiichi Miyazaki
Nagoya University, Japan

TuB3-5 (Oral)

15:00 - 15:15

Structural and optical properties of GaAs film grown on a glass substrate using a largegrained Ge seed layer for solar cell applications
Takeshi Nishida,* Kenta Moto, Takashi Suemasu, and Kaoru Toko
Institute of Applied Physics, University of Tsukuba, Japan

Compound Semiconductor Week 2019

May 21 (Tue)

TuB3-6 (Oral)

15:15 - 15:30

Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures
Galih Ramadana Suwito,*,1 Masahiro Fukuda,2 Shigehisa Shibayama,2 Mitsuo Sakashita,2 Osamu Nakatsuka,2,3 and Shigeaki
Zaima4
1Department of Physical Science and Engineering, School of Engineering, Nagoya University, Japan, 2Department of Materials Physics, Graduate School of Engineering, Nagoya University, Japan, 3Institute of Materials and Systems for Sustainability,
Nagoya University, Japan, 4Institute of Innovation for Future Society, Nagoya University, Japan

TuB3-7 (Oral)

15:30 - 15:45

Dislocation free InP/InGaAs/InP islands on Si by micro-channel selective area MOVPE
Yufeng Fu,*,1 Nobuyuki Otake,1 and Masakazu Sugiyama2
1DENSO CORPORATION, Japan, 2The University of Tokyo, Japan

TuB3-8 (Oral)

15:45 - 16:00

Epitaxial growth of BaSi2 light absorbers by molecular beam epitaxy and significant photoresponsivity enhancement by increased growth temperatures
Yudai Yamashita,* Kaoru Toko, and Takashi Suemasu
University of Tsukuba, Japan

TuC3

Characterization of Nanostructures

Room C

14:00-16:00

Chair: Shinjiro Hara and Ryo Tamaki

TuC3-1 (Invited)

14:00 - 14:30

Characterization of Nanowire Devices Using Nano-Focused X-Ray Beams
Jesper Wallentin
Synchrotron Radiation Research and NanoLund, Lund University, Sweden

TuC3-3 (Oral)

14:30 - 14:45

Observation of dominant non-local superconducting proximity eﬀect due to electronelectron interaction in a ballistic double nanowire
Kento Ueda,*,1 Sadashige Matsuo,1 Hiroshi Kamata,2 Yosuke Sato,1 Yusuke Takeshige,1 K. Li,3 Soren Jeppessen,4 Lars
Samuelson,4 Hongqi Xu,3,4 and Seigo Tarucha1,2
1Department of Applied physics, University of Tokyo, Japan, 2RIKEN, Japan, 3Peking University, China, 4Lund University,
SwedenTuC3-4 (Oral)

14:45 - 15:00

2DEG formation in doped polytype InP nanowires: an optical study
Irene Geijselaers,*,1 Sebastian Lehmann,1 Kimberly Dick-Thelander,1,2 and Mats-Erik Pistol1
1Department of Solid State Physics and NanoLund, Lund University, Sweden, 2Centre for Analysis and Synthesis, Lund University, Sweden

TuC3-5 (Oral)

15:00 - 15:15

Irradiation Eﬀects on Induced Electron Conductivity in an un-doped GaAs/AlGaAs
Quantum Well Hall Bar
Takafumi Fujita,*,1 Ryota Hayashi,1 Makoto Kohda,2 Julian Ritzmann,3 Arne Ludwid,3 Junsaku Nitta,2 Andreas D. Wieck,3
and Akira Oiwa1
1The Institute of Scientific and Industrial Research, Osaka University, Japan, 2Department of Materials Science, Tohoku University, Japan, 3Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany

Compound Semiconductor Week 2019

May 21 (Tue)

TuC3-6 (Oral)

15:15 - 15:30

Lateral electronic coupling among self-assembled semiconductor quantum dots promoted
by adjoining tunnel-coupled quantum-well potentials
Junichi Takayama,1 Satoshi Hiura,1 Kazuki Takeishi,1 Takayuki Kiba,2 and Akihiro Murayama*,1
1GSIST, Hokkaido University, Japan, 2Kitami Institute of Technology, Japan

TuC3-7 (Oral)

15:30 - 15:45

Spectral Hole Burning Spectroscopy on Quantum Dashes and Quantum Dots for DualFrequency Laser EngineeringGaëlle Brévalle,* Mathieu Perrin, Cyril Paranthoën, Yoan Léger, Christophe Levallois, Nicolas Chevalier, Hervé Folliot, andMehdi Alouini
Institut FOTON, France

TuC3-8 (Oral)

15:45 - 16:00

Extension of excitation energy to generate terahertz wave to smaller than GaAs bandgap
energy due to growth of InAs quantum dots and nitrogen doped layer
Osamu Kojima* and Takashi Kita
Department of Electrical and Electronic Engineering, Kobe University, Japan

TuD3

Ga2O3 Electrical Devices

Room D

14:00-16:00

Chair: Masataka Higashiwaki and Martin KuballTuD3-1 (Invited)

14:00 - 14:30

Pulsed RF Power Measurements of Laterally Scaled Ga2O3 FETs
Gregg Jessen,*,1 Kelson Chabak,1 Andrew Green,1 Neil Moser,1 Kevin Leedy,1 Dennis Walker, Jr.,1 Antonio Crespo,1 Miles
Lindquist,2 Peter Zwyth,3 and Ryan Gilbert4
1Sensors Directorate, Air Force Research Laboratory, United States of America, 2KBRwyle, United States of America,
3SelectTech Services Corp., United States of America, 4The Design Knowledge Company, United States of America

TuD3-3 (Oral)

14:30 - 14:45

Dynamic RON in β -Ga2O3 MOSFET Power Devices
Taylor Moule,*,1 Manikant Singh,1 James Pomeroy,1 Serge Karboyan,1 Michael J. Uren,1 Man Hoi Wong,2 Kohei Sasaki,3Akito Kuramata,3 Shigenobu Yamakoshi,3 Masataka Higashiwaki,2 and Martin Kuball 1
1Centre for Device Thermography and Reliability, University of Bristol, United Kingdom, 2National Institute of Information
and Communications Technology, Japan, 3Tamura Corporation, Japan

TuD3-4 (Oral)

14:45 - 15:00

Nitrogen-Doped Channel β-Ga2O3 MOSFET with Normally-Oﬀ Operation
Takafumi Kamimura,* Yoshiaki Nakata, Man Hoi Wong, Phuc Hong Than, and Masataka Higashiwaki
National Institute of Information and Communications Technology, Japan

TuD3-5 (Invited)

15:00 - 15:30

Ga2O3 Power Schottky Barrier Diodes and Transistors: Design Principles and Experimental Validation
Huili Grace Xing,* Wenshen Li, Zongyang Hu, Nicholas Tanen, Riena Jinno, Kazuki Nomoto, and Debdeep Jena
Cornell University, United States of America

Compound Semiconductor Week 2019

May 21 (Tue)

TuD3-7 (Oral)

15:30 - 15:45

Vertical Schottky barrier diodes based on a bulk β -Ga2O3 substrate with high switching
performance
Xing Lu,*,1,2 Xu Zhang,2 Huaxing Jiang,2 Xinbo Zou,3 and Kei May Lau2
1School of Electronics and Information Technology, Sun Yat-sen University, China, 2ECE Department, Hong Kong Universityof Science and Technology, Hong Kong, 3School of Information Science and Technology, ShanghaiTech University, China

TuD3-8 (Oral)

15:45 - 16:00

Vertical Ga2O3 Schottky Barrier Diodes with Guard Ring Formed by Nitrogen-Ion Implantation
Chia-Hung Lin,*,1 Yohei Yuda,2 Man Hoi Wong,1 Mayuko Sato,3 Nao Takekawa,3 Keita Konishi,3 Tatsuro Watahiki,2 Mikio
Yamamuka,2 Hisashi Murakami,3 Yoshinao Kumagai,3 and Masataka Higashiwaki1
1National Institute of Information and Communications Technology, Japan, 2Mitsubishi Electric Corporation, Japan,
3Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan

TuE3

hBN : Spectroscopy and Growth II

Room E

14:00-16:00

Chair: Takashi Taniguchi and Sergei Novikov

TuE3-1 (Invited)

14:00 - 14:30

Luminescence eﬃciency of hexagonal boron nitride
Julien Barjon,*,1 Alexandre Plaud,1,2 Lorenzo Sponza,2 Léonard Schué,1,2 Ingrid Stenger,1 Frédéric Fossard,2 Kenji Watanabe,3Takashi Taniguchi,3 François Ducastelle,2 and Annick Loiseau2
1Groupe d’Etude de la Matière Condensée, Université de Versailles St Quentin en Yvelines, CNRS, Université Paris Saclay,
Versailles, France, 2Laboratoire d’Etude des Microstructures, ONERA, CNRS, Université Paris Saclay, Chatillon, France,
3National Institute for Material Sciences, Tsukuba, Japan

TuE3-3 (Oral)

14:30 - 14:45

Quantification of external quantum eﬃciency for near-band-edge emission of h-BN bulk
crystals under photo-excitation
Kazunobu Kojima,*,1 Kenji Watanabe,2 Takashi Taniguchi,2 and Shigefusa F. Chichibu1
1Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Japan, 2National Institute forMaterials Science (NIMS), Japan

TuE3-4 (Oral)

14:45 - 15:00

Ultralow Loss Polaritons in Isotopically Pure Hexagonal Boron Nitride
Alexander J. Giles,*,1 Swathi Iyer,1 Sai S. Sunku,2 Thomas G. Folland,3 Song Liu,4 Chase T Ellis,1 Joseph G. Tischler,1 Jeﬀ
C. Owrutsky,1 James H. Edgar,4 D. N. Basov,2 and Joshua D. Caldwell3
1US Naval Research Laboratory, United States of America, 2Department of Physics, Columbia University, United States ofAmerica, 3Mechanical Engineering Department, Vanderbilt University, United States of America, 4Department of Chemical
Engineering, Kansas State University, United States of America

TuE3-5 (Invited)

15:00 - 15:30

Observation of impurity incorporated domain in h-BN single crystals
Kenji Watanabe* and Takashi Taniguchi
National institute for Materials Science, Japan

TuE3-7 (Oral)

15:30 - 15:45

Kinetical limitations of h-BN MOVPE growth
Krzysztof Pakula,* Aleksandra Dabrowska, Mateusz Tokarczyk, Johannes Binder, Jolanta Borysiuk, Rafal Bozek, Grzegorz
Kowalski, Andrzej Wysmolek, and Roman Stepniewski
Faculty of Physics, University of Warsaw, Poland

Compound Semiconductor Week 2019

May 21 (Tue)

TuE3-8 (Oral)

15:45 - 16:00

Large area hexagonal boron nitride coatings for SERS applications with silver nanoparticles
Dipankar Chugh,*,1 Jennifer Wong-Leung,1 Li Li,2 Mykhaylo Lysevych,2 Hark Hoe Tan,1 and Chennupati Jagadish1,2
1Department of Electronic Materials Engineering, Australian National University, Australia, 2Australian National Fabrication
Facility, Australian National University, Australia

TuP

Poster Session II

Reception Hall

16:00-18:00

TuP-A-1 (Poster)High-Temperature Annealing of Sputter-Deposited AlN on Diamond Substrate
Tatsuya Shirato,*,1 Yusuke Hayashi,2 Kenjiro Uesugi,3 Kanako Shojiki,2 and Hideto Miyake1,2
1Mie Univ., Grad. School of Eng., Japan, 2Mie Univ., Grad. School of RIS, Japan, 3Mie Univ., SPORR, Japan

TuP-A-2 (Poster)

Enabling Low Temperature Aluminum Nitride ALD by Use of a Novel Hydrazine Source
Daniel Alvarez,*,1 Jeﬀrey J. Spiegelman,1 Keisuke Andachi,2 Aswin Kondusamy,3 and Jiyoung Kim3
1RASIRC, United States of America, 2Taiyo Nippon Sanso Corporation, Japan, 3University of Texas, Dallas, United States ofAmerica

TuP-A-3 (Poster)Growth and characterization of InN epi-films on nitrided Si3N4 layer by RF-MOMBE
Sheng Chen,*,1 Wei-Chun Chen,2 and Chin-Pao Cheng1
1Department of Mechatronic Engineering, National Taiwan Normal University, Taiwan, 2Instrument Technology ResearchCenter, National Applied Research Laboratories, Taiwan

TuP-A-4 (Poster)Eﬀects of growth temperature of a capping layer on excited spin properties of In0.5Ga0.5As
quantum dots
Yuto Nakamura,*,1 Satoshi Hiura,2 Shino Sato,1 Junichi Takayama,2 and Akihiro Murayama2
1Faculty of Engineering, Hokkaido University, Japan, 2GSIST, Hokkaido University, Japan

TuP-A-5 (Poster)High-quality epitaxial growth of half-metallic Co2FeSi films on a Co-terminatedGaN(0001) surface
Shinya Yamada,*,1,2 Yuki Goto,1 Jun Tatebayashi,3 Shuhei Ichikawa,3 Yasufumi Fujiwara,3 and Kohei Hamaya1,2
1Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Japan, 2Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Japan, 3Department of Materials andManufacturing Science, Graduate School of Engineering, Osaka University, Japan

TuP-A-6 (Poster)Eﬀects of post-growth annealing in vacuum and Zn vapor on the electrical and opticalproperties of magnetron sputtered GaMgZnO films
Che-Sin Lee,1 Vijay Balaso Patil,*,1 Sang-Hun Jeong,2 and Byung-Teak Lee1
1Chonnam National University, Republic of Korea, 2Korea Basic Science Institute, Republic of Korea

TuP-A-7 (Poster)Eﬀects of Bi Irradiation for the MBE Growth of GaSb on Ge(111) Vicinal Substrates
Yasutomo Kajikawa,* Makoto Nishigaichi, Masahiro Inoue, and Mitsunori Kayano
Interdisciplinary Faculty of Science and Engineering, Shimane University, Japan

Compound Semiconductor Week 2019

May 21 (Tue)

TuP-A-8 (Poster)Growth Temperature and Sb Flow Dependence of Surface Morphology of Metamorphic
InAs(Sb) on GaAs substrate Grown by MOVPE
Yuki Imamura,* Miki Shoiriki, Koji Maeda, and Masakazu Arai
University of Miyazaki, Japan

TuP-A-10 (Poster)

Using optical emission spectroscopy (OES) to monitor In-line very high-frequency plasma
enhanced chemical vapor deposition (VHF-PECVD) technique optoelectrical properties
Jia-Yan Lin,*,1 Cheng-Yuan Hung,2 Wei-Chen Tien,2 Hung-Wei Wu,3 Yung-Der Juang,4 Jia-Hao Lin,5 and Shih-Kun Liu6
1Department of Greenergy, National University of Tainan, Tainan, Taiwan, 2Medical Devices and Opto-Electronics Equipment
Department, Metal Industries Research & Development Centre, Kaohsiung, Taiwan, 3Department of computer and communication, Kun Shan University, Tainan, Taiwan, 4Department of Materials Science, National University of Tainan, Tainan,
Taiwan, 5Department of Electronic Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan, 6Institute of Photonics and Communications, National Kaohsiung University of Science and Technology, Kaohsiung,TaiwanTuP-A-11 (Poster)Eﬀects of chamber pressure on the hydrogenated amorphous silicon thin film by microwave annealing
Jia-Hao Lin,*,1 Hung-We Wu,2 Wei-Chen Tien,3 Cheng-Yuan Hung,3 and Shih-Kun Liu4
1Department of Electronic Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan,
2Department of computer and communication, Kun Shan University, Tainan, Taiwan, 3Medical Devices and Opto-Electronics
Equipment Department, Metal Industries Research & Development Centre, Kaohsiung, Taiwan, 4Institute of Photonics andCommunications, National Kaohsiung University of Science and Technology, Kaohsiung, Taiwan

TuP-A-12 (Poster) - Late News -Characterization of Si(111) surface nitridation on the properties of Si3N4 films grown by
RF-N2 plasma exposure
Wei-Chun Chen,1 Sheng Chen,*,2 James Su,1 Hung-Pin Chen,1 Yu-Wei Lin,1 and Chin-Pao Cheng2
1Taiwan Instrument Research Institute, National Applied Research Laboratories, Taiwan, 2Department of Mechatronic Engineering, National Taiwan Normal University, Taiwan

TuP-A-13 (Poster) - Late News -Demonstration of Germanium Doping to GaP-based Dilute Nitrides
Keisuke Yamane,* Shunsuke Tanaka, and Akihiro Wakahara
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Japan

TuP-C-1 (Poster)Development of High-power High-thermal Conductivity GaN High Electron Mobility
Transistors
Dai-Jie Lin,*,1 Yu-Hsuan Lee,1 and Jian-Jang Huang1,2
1Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan, 2Department of Electrical Engineering, National Taiwan University, Taiwan

TuP-C-2 (Poster)Analysis of threshold voltage in GaN MOSFETs on homoepitaxial p-type GaN layers
Daigo Kikuta,*,1 Kenji Ito,1 Tetsuo Narita,1 and Tetsu Kachi2
1Toyota Central R&D Labs, Japan, 2Nagoya University, Japan

TuP-C-3 (Poster)

Improved on-state breakdown characteristics in AlGaN/GaN MOS-HEMTs with a gate
field plate
Takashi Nishitani,* Ryota Yamaguchi, Joel Tacla Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
University of Fukui, Japan

Compound Semiconductor Week 2019

May 21 (Tue)TuP-C-4 (Poster)

Relationship between High Frequency Power Characteristics and Current Collapse of
AlGaN/GaN HEMTs
Takashi Ozawa,*,1 Joel Tacla Asubar,1 Hirokuni Tokuda,1 Yohei Yagishita,2 Yoichi Kawano,2 and Masaaki Kuzuhara1
1University of Fukui, Japan, 2Fujitsu Laboratories Ltd, Japan

TuP-C-5 (Poster)High Performance Normally-Oﬀ AlGaN/GaN MIS-HEMT Using Charge Storage Technique
Ping-Cheng Han,1 Chih-Yi Yang,*,1 Ming-Wen Lee,1 Jui-Sheng Wu,2 Chia-Hsun Wu,2 and Edward Yi Chang1,21International college of Semiconductor Technology, National Chiao Tung University, Taiwan, 2Department of Materials Science & Engineering, National Chiao Tung University, Taiwan

TuP-C-6 (Poster)

Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in
RF/Microwave Applications
Wenjie Song,*,1 Zheyang Zheng,1 Jiacheng Lei,1 Jin Wei,1 Li Yuan,2 and Kevin J. Chen1
1Hong Kong University of Science and Technology, Hong Kong, 2Genettice Co., Ltd., China

TuP-C-7 (Poster)Low 0.3 V Turn-on of Gated-Anode GaN-Cap/AlGaN/GaN HEMT Diode with Selective
Dry-Etching TechniqueJumpei Sumino,1 Momoe Shojima,*,1 Ryohei Yamaguchi,1 Yamato Osada,2 Kamimura Ryuichiro,2 and Akio Wakejima1
1Nagoya Institute of Technology, Japan, 2ULVAC Inc., Japan

TuP-C-8 (Poster) - Late News -Superpower Transistor Consisting of Only LED and Silicon Solar Cell -Its Application toElectric Vehicle Drive ControlKensho Okamoto,*,1 Itsuo Nakano,2 Masami Hosokawa,3 and Fumio Matsushita3
1Kagawa University, Japan, 2Okayama University, Japan, 3Optoelectronic semiconductor Application Laboratory, Japan

TuP-D-1 (Poster)Study on epitaxial lift-oﬀ of stacked GaAs solar cells for low-cost photovoltaic application
Yasushi Shoji* and Takeyoshi Sugaya
Research Center for Photovoltaics, AIST, Japan

TuP-D-3 (Poster)

Enhancement of Infrared Photo-responses of the Schottky Gate Region of an nAlGaAs/GaAs Heterojunction FET by a Second Light Illumination
Takuya Kawazu,* Takeshi Noda, and Yoshiki Sakuma
National Institute for Materials Science, Japan

TuP-D-5 (Poster)High-speed uni-travelling carrier photodiode at 1064nm wavelengthZhiyang Xie, Yaojiang Chen, and Baile Chen*
ShanghaiTech University, China

Compound Semiconductor Week 2019

May 21 (Tue)TuP-D-6 (Poster)

Thermoelectrically Cooled nBn T2SLs InAs/InAsSb/B-AlAsSb MWIR Detector
Piotr Martyniuk,*,1 Krystian Michalczewski,1 Tsung Yin Tsai,2 Chao-Hsin Wu,2 and Yuh-Renn Wu2
1Applied Physics Institute, Military University of Technology, Poland, 2Graduate Institute of Photonics and Optoelectronics,
National Taiwan University, Taiwan

TuP-D-8 (Poster)First-principles study of defect properties in radiation-detectable TlBr
Masato Ishikawa* and Takashi Nakayama
Department of Physics, Chiba University , Japan

TuP-D-9 (Poster)Novel Composite Substrates for Thin Film AlGaInP-based High Power LEDs
Ray Hua Horng,*,1,2,3 ShreeKant Sinha,1 Hsiang-An Feng,4 Cheng-Yu Chung,4 and Chia-Wei Tu4
1Institute of Electronics, National Chiao Tung University, Taiwan, 2Center for Emergent Functional Matter Science, National
Chiao Tung University, Taiwan, 3Department of Photonics, National Chiao Tung University, Taiwan, 4Ingentec Corporation,
Taiwan

TuP-D-10 (Poster)

Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below-Gap
Excitation Light without Temperature Eﬀect
Sanjida Ferdous,* Chika Negishi, Norihiko Kamata, Shuhei Yagi, and Hiroyuki Yaguchi
Graduate School of Science and Engineering, Saitama University, Japan

TuP-D-11 (Poster)

Detection of Nonradiative Recombination Levels in UV-LEDs by Irradiating Below-Gap
Excitation Light
Norihiko Kamata,*,1 Ken Matsuda,1 Sota Shirai,1 Zentaro Honda,1 and Hideki Hirayama2
1Department of Functional Materials Science, Saitama University, Japan, 2Quantum Optodevice Lab., RIKEN, Japan

TuP-D-12 (Poster)

Simulation Study of Front-illuminated GaN Avalanche Photodiodes with Hole-initiatedMultiplication
Yangqian Wang,1 Yuliang Zhang,1 Yang A. Yang,1 Xing Lu,3 and Xinbo Zou*,1,2
1School of Information Science and Technology, ShanghaiTech University, Shanghai, China, 2GaNology Semiconductor Co.,
Ltd, China, 3School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China

TuP-D-14 (Poster) - Late News -Growth of InGaAs solar cells on InP(001) miscut substrates using solid-source molecularbeam epitaxy
Yuki Ishitsuka,*,1,2 Ryuji Oshima,1 Takeyoshi Sugaya,1 and Yoshinobu Okano2
1National Institute of Advanced Industrial Science and Technology, Japan, 2Tokyo City University, Japan

TuP-E-1 (Poster)Heat transport in GaAs membranes studied by using a GaAs MEMS thermal sensor
Ya Zhang,*,1 Boqi Qiu,2 Shaoqing Du,2 Naomi Nagai,2 and Kazuhiko Hirakawa2,3
1Institute of Engineering, Tokyo University of Agriculture and Technology, Japan, 2Institute of Industrial Science, Universityof Tokyo, Japan, 3Institute for Nano Quantum Information Electronics, University of Tokyo, Japan

Compound Semiconductor Week 2019

May 21 (Tue)TuP-E-2 (Poster)

Suppressing beam deflections by introducing phosphorous in the GaAs-based terahertz
MEMS bolometers
Boqi Qiu,*,1 Ya Zhang,2 Kouichi Akahane,3 Naomi Nagai,1 and Kazuhiko Hirakawa1,4
1Institute of Industrial Science, University of Tokyo, Japan, 2Tokyo University of Agriculture and Technology, Japan, 3National
Institute of Information and Communications Technology, Japan, 4Institute for Nano Quantum Information Electronics, University of Tokyo, Japan

TuP-E-4 (Poster)Novel Fabrication Technique of Suspended Nanowire Devices for Nanomechanical Applications
Wataru Tomita,*,1,2 Satoshi Sasaki,1 Kouta Tateno,1 Hajime Okamoto,1 and Hiroshi Yamaguchi1,2
1NTT Basic Research Laboratories, NTT Corporation, Japan, 2Department of physics, Tohoku University, Japan

TuP-E-6 (Poster)Threshold and Resistive Switching Behaviors in Epitaxially Regrown GaN P-N Diodes forHigh Temperature Applications
Kai Fu, Houqiang Fu, Xuanqi Huang, Tsung-Han Yang, Hong Chen, Jossue Montes, Chen Yang, Jinan Zhou, and Yuji Zhao*
School of Electrical, Computer, and Energy Engineering, Arizona State University, United States of America

TuP-E-7 (Poster)Radiative and Nonradiative Tunneling in Nanowire Light-Emitting Diodes
Junichi Motohisa,*,1,2 Hiroki Kameda,1,2 Masahiro Sasaki,1,2 and Katsuhiro Tomioka1,2
1Graduate School of IST, Hokkaido University, Japan, 2RCIQE, Hokkaido University, Japan

TuP-E-8 (Poster)Eﬀects of Impurity Hubbard Bands on the Hall Eﬀect in n-InP
Yasutomo Kajikawa
Interdisciplinary Faculty of Science and Engineering, Shimane University, Japan

TuP-G-1 (Poster)Development of n-type GaN film by Si and Ti co-sputtering technique on a glass substrate
Wei-Sheng Liu,* Chun-Yuan Tan, Yu-Lin Chang, and Cheng-Ting Tsai
Department of Electrical Engineering, Yuan Ze University, Taiwan

TuP-G-2 (Poster)

Evaluate Fixed Charge and Oxide Trapped Charge on SiO2/GaN MOS Structure Before
and After Post Annealing
Masaaki Furukawa,* Mutsunori Uenuma, Yasuaki Ishikawa, and Yukiharu Uraoka
Nara Institute of Science and Technology, Japan

TuP-G-3 (Poster)

Investigation of Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before Activation Annealing Using MOS Structures
Ryo Kamoshida,* Kei Uetake, Shunta Murai, and Masamichi Akazawa
Research Center for Integrated Quantum Electronics, Hokkaido University, Japan

TuP-G-4 (Poster)Multi-wavelength Reflectivity Monitoring on Growth of AlN on Si
Yasushi Iyechika,* Masayuki Tsukui, Kiyotaka Miyano, and Hideshi Takahashi
NuFlare Technology, Inc., Japan

Compound Semiconductor Week 2019

May 21 (Tue)TuP-G-5 (Poster)Analysis of emission characteristics of deep levels in GaN by direct photo excitation
Moe Kikuchi,*,1 Daisuke Uehara,1 Bei Ma,1 Ken Morita,1 Hideto Miyake,2 and Yoshihiro Ishitani1
1Graduate School of Electrical and Electronic Engineering, Chiba University, Japan, 2Graduate School of Regional Innovation
Studies, Mie University, Japan

TuP-G-6 (Poster)

MOCVD growth and characterization of Si-doped thick-AlInN epitaxial films
Mizuki Yamanaka,*,1 Makoto Miyoshi,1 Takashi Egawa,1 and Tetsuya Takeuchi2
1Nagoya Institute of Technology, Japan, 2Meijo University, Japan

TuP-G-7 (Poster)

Local phonon analysis in InGaN film by mapping of Raman peak energy
Shungo Okamoto,*,1 Naomichi Saito,1 Bei Ma,1 Kensuke Oki,1 Ken Morita,1 Kazuhiro Ohkawa,2 and Yoshihiro Ishitani1
1Graduate School of Electrical and Electronic Engineering, Chiba University, Japan, 2Computer, Electrical and Mathematical
Sciences and Engineering Division, King Abdullah University of Science and Technology, Saudi Arabia

TuP-G-8 (Poster)

Enhanced Electrical Properties
AlxGa1-xN/AlyGa1-yN superlatticeof

AlInN/AlN/GaN

Heterostructure

using

Yu-Chih Chen,*,1 Indraneel Sanyal,1 and Jen-Inn Chyi1,2
1Department of Electrical Engineering, National Central University, Taiwan, 2Research Center for Applied Sciences,
Academia Sinica, Taiwan

TuP-G-10 (Poster)

Enhanced excitonic emission eﬃciency in porous GaN and GaInN-GaN quantum wells
grown along the polar direction
Thi Huong NGO,1 Bernard Gil,*,2,3 Tatiana Shubina,3 Pierre Valvin,2 Benjamin Damilano,1 Stephane Vezian,1 and Jean
Massies1
1Centre de Recherche sur l’Hetero-Epitaxie et ses Applications, France, 2 Laboratoire Charles Coulomb- University Montpellier 34095 Montpellier France, France, 3Ioﬀe Institute, 194021 St Petersburg, Russia, Russia

TuP-G-11 (Poster) - Late News -Picosecond Time-Resolved Excitation Dynamics and Emission Manipulation of Eu3+ Ions
Doped into GaN
Brandon Mitchell,*,1,2,3 Ruoqiao Wei,2 Dolf Timmerman,3 Tom Gregorkiewicz,3,4 Shuhei Ichikawa,3 Jun Tatebayashi,3 Volkmar Dierolf,2 and Yasufumi Fujiwara3
1West Chester University, United States of America, 2Lehigh University, United States of America, 3Osaka University, Japan,
4University of Amsterdam, Netherlands

TuP-G-13 (Poster) - Late News -High eﬃciency 100-nm-sized InGaN/GaN active region fabricated by neutral-beametching and GaN regrowth for directional micro-LED
Kexiong Zhang,*,1 Tokio Takahashi,2 Daisuke Ohori,3 Guangwei Cong,2 Kazuhiko Endo,4 Naoto Kumagai,1 Seiji
Samukawa,3,4,5 Mitsuaki Shimizu,1,6 and Xuelun Wang1,6
1GaN-OIL, AIST, Japan, 2ESPRIT, AIST, Japan, 3IFS, Tohoku University, Japan, 4NeRI, AIST, Japan, 5AIMR, Tohoku University, Japan, 6IMaSS, Nagoya University, Japan

Compound Semiconductor Week 2019

May 21 (Tue)TuP-H-2 (Poster)Growth and Deep UV Luminescent Properties of Rocksalt-Structured Ultra-WideBandgap MgZnO on MgO Substrates
Kentaro Kaneko,*,1,2,3 Kyohei Ishii,2 Mizuki Ono,4 Kanta Kudo,4 Takeyoshi Onuma,4 Tohru Honda,4 and Shizuo Fujita2,3
1Engineering Education Research Center, Kyoto University, Japan, 2Department of Electronic Science and Engineering, Kyoto
University, Japan, 3Photonics and Electronics Science and Engineering Center, Kyoto University, Japan, 4Department ofApplied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University, Japan

TuP-H-3 (Poster)Synthesis and characterization of AlTiO films by mist-CVD
Zenji Yatabe,*,1 Koshi Nishiyama,1 Takaaki Tsuda,1 Kazuki Nishimura,1 and Yusui Nakamura1,2
1Kumamoto University, Japan, 2Kumamoto Phoenics, Japan

TuP-H-4 (Poster)Sol-gel synthesis of highly transparent and conducting Cadmium Oxide
Cheuk Kai Gary Kwok,*,1 Chao Ping Liu,2 and Kin Man Yu1,3
1Department of Physics, City University of Hong Kong, Hong Kong, 2Department of Physics, College of Science, Shantou
University, China, 3Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong

TuP-H-5 (Poster)Eﬀect of Buﬀer Layer on Improvement of SnO2 Thin Film on Sapphire Substrate Formedby Mist Chemical Vapor Deposition
Thant Zin Win,*,1 Takumi Furukawa,1 Yudai Tanaka,1 Koshi Okita,1 Koji Sue,2 Zenji Yatabe,1,3 and Yusui Nakamura1,4,5
1GSST, Kumamoto University, Japan, 2Faculty of Engineering, Kumamoto University, Japan, 3POIE, Kumamoto University,
Japan, 4FAST, Kumamoto University, Japan, 5Kumamoto Phoenics, Japan

TuP-H-6 (Poster)

Characterization of amorphous aluminium oxide thin films synthesized by mist-CVD
Zenji Yatabe,*,1 Koshi Nishiyama,1 Takaaki Tsuda,1 Kazuki Nishimura,1 and Yusui Nakamura1,2
1Kumamoto University, Japan, 2Kumamoto Phoenics, Japan

TuP-H-7 (Poster)

Rectified Schottky diodes that use low-cost carbon paste/InGaZnO junctions
Chia-Ling Wu, Fu-Fan Hsu, and Chun-Ying Huang*
Department of Applied Materials and Optoelectronics Engineering, National Chi Nan University, Taiwan

TuP-J-1 (Poster)

Influence of contact resistances on high-mobility top-gate organic transistors based on
didodecylbenzothienobenzothiophene
Shion Tazuhara,*,1 Tomoya Aiba,1 Takashi Nagase,1,2 Takashi Kobayashi,1,2 Yuichi Sadamitsu,3 and Hiroyoshi Naito1,2
1Department of Physics and Electronics, Osaka Prefecture University, Japan, 2The Research Institute for Molecular Electronic
Devices, Osaka Prefecture University, Japan, 3R&D Planning Division, Nippon Kayaku Co., Ltd., Japan

TuP-J-2 (Poster)Thin-Film Transistors Based on Copper Phthalocyanine Deposited on a Gate Dielectric
Rubbed with Poly(tetrafluoroethylene)
Shotaro Watanabe, Yoshinari Kimura, Yoshiaki Hattori, and Masatoshi Kitamura*
Department of Electrical and Electronic Engineering, Kobe University, Japan

Compound Semiconductor Week 2019

May 21 (Tue)TuP-J-3 (Poster)

Device characteristics of solution-processed molecular floating-gate transistor memories
based on ambipolar polymer semiconductors
Miho Higashinakaya,*,1 Hayato Abe,1 Takashi Nagase,1,2 Takashi Kobayashi,1,2 and Hiroyoshi Naito1,2
1Department of Physics and Electronics, Osaka Prefecture University, Japan, 2The Research Institute for Molecular Electronic

Devices, Osaka Prefecture University, Japan

TuP-J-4 (Poster)

Voltage and Frequency Dependence of Capacitance Characteristics in Organic MOS Capacitors
Yoshinari Kimura,* Yoshiaki Hattori, and Masatoshi Kitamura
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Japan

TuP-J-5 (Poster)Organic Light-Emitting Diode Composed of an Oligomer Crystal Emission Layer
Takeshi Yamao,* Koki Nishimura, Yuhi Inada, and Shu Hotta
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Japan

TuP-J-6 (Poster)

Optical Characterization of Co-doped Single Crystal Organic Semiconductor with Emissive and Assist Dopants
Kosuke Watanabe,*,1 Keita Takeuchi,1 Ryogo Abe,1 Asuka Suzuki,1 and Akihiko Kikuchi1,21Department of Engineering and Applied Sciences, Sophia University, Japan, 2Sophia Nanotechnology Center, Japan

TuP-J-7 (Poster)

Strong Light-Matter Coupling and Photoluminescence Properties of 2D and quasi-2D
Perovskite Microcavities
Shuai Zhang,1 Limeng Ni,2 Akshay Rao,2 and Kenichi Yamashita*,11Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Japan, 2Cavendish Laboratory, Universityof Cambridge, United Kingdom

TuP-J-8 (Poster)

Fabrication of CH3NH3PbBr3 Based Perovskite Single Crystal Arrays by Spin-coating
Method Using Hydrophobic Patterned Substrate
Ryogo Abe,*,1 Keita Takeuchi,1 Asuka Suzuki,1 Kosuke Watanabe,1 and Akihiko Kikuchi1,21Depatrmant of Engineering and Applied Sciences, Sophia University, Japan, 2Sophia Nanotechnology Center, Japan

TuP-J-9 (Poster) - Late News -Temperature dependence of the intersystem crossing rate in thermally activated delayed
fluorescence emitters
Takashi Kobayashi,*,1,2 Daisuke Kawase,1 Akitsugu Niwa,1 Atsumi Kayamyo,1 Takashi Nagase,1,2 Kenichi Goushi,3,4 Chihaya
Adachi,3,4 and Hiroyoshi Naito1,2
1Department of Physics and Electronics, Osaka Prefecture University, Japan, 2The Research Institute for Molecular Electronic
Devices, Osaka Prefecture University, Japan, 3Center for Organic Photonics and Electronics Research, Kyushu University,
Japan, 4Japan Science and Technology Agency, ERATO, Adachi Molecular Exciton Engineering Project, Japan

TuP-SS1-1 (Poster)First Principles Study on Electronic Structures of α -Ga2O3 and α -Ir2O2
Kazuyuki Uno,* Taichi Nakamura, and Ichiro Tanaka
Department of Systems Engineering, Wakayama University, Japan

Compound Semiconductor Week 2019

May 21 (Tue)TuP-SS1-2 (Poster)Eﬀect of growth variables on properties of gallium oxide thin films grown by sputtering
Vijay Balaso Patil,*,1 Byung-Teak Lee,1 and Sang-Hun Jong2
1Photonic and electronic thin film laboratory, Chonnam national university,Gwangju, Republic of Korea, 2Gwangju Center,
Korea Basic Science Institute, Gwangju, Republic of Korea

TuP-SS1-4 (Poster)Highly rectifying contacts on (In,Ga)2O3 thin films grown by PLD
Daniel Splith,* Anna Hassa, Peter Schlupp, Holger von Wenckstern, and Marius Grundmann
Felix Bloch Institute for Solid State Physics, Universität Leipzig, Germany

TuP-SS1-5 (Poster)

Influence of post-annealing on properties of α -Ga2O3 epilayer grown by halide vapor
phase epitaxy
Hoki Son, Ye-Ji Choi, Yong-Ho Ra, Young-Jin Lee, Jin-Ho Kim, Sun Woog Kim, Tae-Young Lim, Jonghee Hwang, and
Dae-Woo Jeon*
Korea Institute of Ceramic Engineering & Technology, Republic of Korea

TuP-SS1-6 (Poster)

Deep-Level Defect Investigation of Si-Doped β -Ga2O3 Homoepitaxial Films Grown by
Halide Vapor Phase Epitaxy
Yoshitaka Nakano* and Akira Toyotome
Department of Electrical & Electronic Engineering, Chubu University, Japan

TuP-SS1-7 (Poster)Growth of Ga2(O,S)3 Alloy Films on YSZ Substrates by Mist Chemical Vapor Deposition
Kazuaki Akaiwa,*,1 Tsubasa Hiroe,1 Moe Nagano,1 Tomoki Abe,1 Motohisa Kado,2 and Kunio Ichino1
1Department of Information and Electronics, Tottori University, Japan, 2Toyota Motor Corporation, Japan

TuP-SS1-8 (Poster)Electrical and structural properties of Sn-doped α -Ga2O3 thin films grown by mist chemical vapor deposition
Shuhei Mochizuki,* Tomohiro Yamaguchi, Kenichiro Rikitake, Takeyoshi Onuma, and Tohru Honda
Department of Applied Physics, Kogakuin University, Japan

TuP-SS1-9 (Poster)Synthesis of α -Ga2O3 thin films on Au nanoparticles dispersed on sapphire substrates for
epitaxial lateral overgrowth
Kentaro Kaneko,*,1,2,3 Yasuhisa Masuda,2 and Shizuo Fujita2,3
1Engineering Education Research Center, Kyoto University, Japan, 2Department of Electronic Science and Engineering, Kyoto
University, Japan, 3Photonics and Electronics Science and Engineering Center, Kyoto University, Japan

TuP-SS1-10 (Poster)

The Thermal Stability of ϵ -Ga2O3 Thin Films Grown on (111) 3C-SiC Template Substrates
Masatoshi Koyama,* Toyokazu Kaneko, Sodai Fujiwara, Toshihiko Maemoto, and Shigehiko Sasa
Nanomaterials and Microdevices Research Center, Osaka Institute of Technology, Japan

TuP-SS1-12 (Poster)

Sputtering Ambient Eﬀects on Functionality of Al-doped Gallium Oxide Films for DeepUltraviolet Detectors
Po-Wei Chen, Shiau-Yuan Huang, Chao-Chun Wang, Po-Wen Hsiao, Shuo-Huang Yuan, and Dong-Sing Wuu*
Department of Materials Science and Engineering, National Chung Hsing University, Taiwan

Compound Semiconductor Week 2019

May 21 (Tue)TuP-SS2-1 (Poster)The growth of boron nitride on poly-crystalline Ni by plasma-assisted molecular beam
epitaxy
Wei-Cyuan Huang,1 Chia-Wei Huang,1 Sheng-Chung Chen,*,1 Ing-Sung Yu,1 Hui Li,2 and Hung-Hsiang Cheng2
1Department of Material Science and Engineering, National Dong Hwa University, Taiwan, 2Center for Condensed Matter
Sciences, National Taiwan University, Taiwan

TuP-SS2-2 (Poster)

Reflectivity of hexagonal Boron-Nitride in deep UV
Christine ELIASLaboratoire Charles Coulomb, France

TuP-SS2-3 (Poster)

CVD Growth of BN Thin Films using B2H6
Hisashi Yamada,*,1 Sho Inotsume,1,2 Naoto Kumagai,1 Toshikazu Yamada,1 and Mituaki Shimizu1,2
1GaN-OIL, National Institute of Advanced Industrial Science and Technology, Japan, 2Nagoya University, Japan

TuP-SS2-4 (Poster)

Micro-photoluminescence imaging of hexagonal boron nitride crystal in the UV range
Thomas Pelini,*,1 Anais Dreau,1 Christine Elias,1 Pierre Valvin,1 Guillaume Cassabois,1 Bernard Gil,1 Vincent Jacques,1 Jiahan
Li,2 and James H. Edgar2
1Laboratoire Charles Coulomb UMR 5221 CNRS-UM, France, 2Tim Taylor Department of Chemical Engineering, Kansas
State University, United States of America

Compound Semiconductor Week 2019

May 22 (Wed)May 22 (Wed)

WeA1

GaN and Related Technologies II

Room A

08:30-10:00

Chair: Daigo Kikuta and Masamichi Akazawa

WeA1-1 (Invited)

08:30 - 09:00

MOS interface control for GaN power transistors
Tamotsu Hashizume
RCIQE, Hokkaido University and IMaSS, Nagoya University, Japan

WeA1-3 (Invited)

09:00 - 09:30

Vacancy-type defects in GaN-based power device structure - defect characterization in
ion implanted GaN and Al2O3/GaN Akira Uedono,*,1 Werner Egger,2 Christoph Hugenschmidt,3 and Shoji Ishibashi4
1Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Japan, 2Universität der Bundeswehr
München, Institut für Angewandte Physik und Messtechnik, Germany, 3Physics Department E21 and Heinz Maier-Leibnitz
Zentrum, Technische Universität München, Germany, 4CD-FMat, AIST, Japan

WeA1-5 (Oral)

09:30 - 09:45

Electronic structure analysis of core structures of threading dislocations in GaN
Takashi Nakano,*,1 Kenta Chokawa,1 Masaaki Araidai,1,2 Kenji Shiraishi,1,2 Atsushi Oshiyama,2 Akira Kusaba,3 Yoshihiro
Kangawa,2,4 Atsushi Tanaka,2 Yoshio Honda,1,2 and Hiroshi Amano1,2
1Graduate School of Engineering, Nagoya University, Japan, 2Institute of Materials and Systems for Sustainability, Nagoya
University, Japan, 3Graduate School of Engineering, Kyushu University, Japan, 4Research Institute for Applied Mechanics
Kyushu University, Japan

WeA1-6 (Oral)

09:45 - 10:00

Eﬀects of Ga-OH Bond at Initial GaN Surface on Electrical Characteristics of SiO2/GaN
InterfaceMutsunori Uenuma,* Ryota Ando, Masaaki Furukawa, Yasuaki Ishikawa, and Yukiharu Uraoka
Nara Institute of Science and Technology, Japan

WeB1

Photovoltaic and LED

Room B

08:30-10:00

Chair: Takeyoshi Sugaya and Hideki Yagi

WeB1-1 (Invited)

08:30 - 09:00

Smart Stack Technology for III-V/Si Multi-Junction Solar Cells
Hidenori Mizuno
Fukusima Renewable Energy Institute, National Institute of Advanced Industrial Science and Technology (AIST), Japan

WeB1-3 (Oral)

09:00 - 09:15

Electron selective contact for high eﬃciency core-shell nanowire solar cell
Vidur Raj ,*,1 Kaushal Vora,2 Lily Li,2 Lan Fu,1 Hark Hoe Tan,1 and Chennupati Jagadish1
1Electronic Materials Engineering, ANU, Australia, 2Australian National Fabrication Facility, ANU, Australia

Compound Semiconductor Week 2019

May 22 (Wed)

WeB1-4 (Oral)

09:15 - 09:30

Eﬀects of MOVPE growth parameters on high speed grown InGaP PV
Hassanet Sodaabnlu,*,1 Akinori Ubukata,2 Kentaroh Watanabe,1 Takeyoshi Sugaya,3 Yoshiaki Nakano,4 and Masakazu
Sugiyama1,4
1Research Center for Advanced Science and Technology, The University of Tokyo, Japan, 2Tsukuba Laboratories, Taiyo Nippon
Sanso, Japan, 3National Institute of Advanced Industrial Science and Technology (AIST), Japan, 4Department of ElectricalEngineering & Information System, School of Engineering, The University of Tokyo, Japan

WeB1-5 (Oral)

09:30 - 09:45

High Responsivity and Low Dark Current Ultraviolet Photodetectors Using pGaN/AlGaN/GaN Heterostructure
Qifeng Lyu,* Huaxing Jiang, Xing Lu, and Kei May LAU
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong

WeB1-6 (Oral)

09:45 - 10:00

2Gps OFDM Visible Light Communication using Light-emitting Diodes with Photonic
CrystalsSzu-Yu Pan,*,1 Zi-Xuan You,1 Tung-Ching Lin,1 and Jian-Jang Huang1,2
1Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan, 2Department of Electrical Engineering, National Taiwan University, Taiwan

WeC1

Nanowire Devices

Room C

08:30-10:00

Chair: Jesper Wallentin and Kenichi Kawaguchi

WeC1-1 (Oral) - Late News -08:30 - 08:45

Gate tunable energy gap and negative magnetoresistance of InAs/GaSb core/shell
nanowires
Zhencun Pan,*,1 Shaoyun Huang,1 Yifeng Zhou,1 Dong Pan,2 Jianhua Zhao,2 and Hongqi Xu1
1Beijing Key Laboratory of Quantum Devices, Key laboratory for the Physics and Chemistry of Nanodevices, and Department
of Electronics, Peking University, China, 2State Key Laboratory of Superlattices and Microstructures, Institute of Semiconduc-

tors, Chinese Academy of Sciences, China

WeC1-2 (Invited)

08:45 - 09:15

Low-Threshold Vertical Lasing from InP Nanowire Embedded in Cat’s Eye Antenna
Fangfang Ren,*,1 Weizong Xu,1 Jiandong Ye,1 Hark Hoe Tan,2 and Chennupati Jagadish2
1School of Electronic Science and Engineering, Nanjing University, China, 2EME, RSPE, The Australian National University,
Australia

WeC1-4 (Oral)

09:15 - 09:30

Telecom-band lasing nanowires at room temperature
Guoqiang Zhang,*,1,2 Masato Takiguchi,1,2 Kouta Tateno,1,2 Takehiko Tawara,1,2 Masaya Notomi,1,2 and Hideki Gotoh1
1NTT Basic Research Laboratories, NTT Corporation, Japan, 2NTT Nanophotonics Center, NTT Corporation, Japan

WeC1-5 (Oral)

09:30 - 09:45

n-doped InGaP Nanowire Shells in Core-Shell pn-junctions
Lisa Liborius,*,1 Jan Bieniek,1 Andreas Nägelein,2 Franz-Josef Tegude,1 Artur Poloczek,1 and Nils Weimann1
1Department of Components for High Frequency Electronics, University of Duisburg-Essen, Germany, 2Fundamentals ofEnergy Materials, Technical University Ilmenau, Germany

Compound Semiconductor Week 2019

May 22 (Wed)

WeC1-6 (Oral)

09:45 - 10:00µm
Growth of GaAs/GaNAs/GaAs Core-Multishell Nanowires Lasing at 1µ
Mitsuki Yukimune,*,1 Ryo Fujiwara,1 Fumitaro Ishikawa,1 Shula Chen,2 Weimin M. Chen,2 and Irina A. Buyanova2
1Graduate School of Science and Engineering, Ehime University, Japan, 2Department of Physics, Chemistry and Biology,
Linköping University, Sweden

WeD1

Quantum Dots and Coherent Dynamics

Room D

08:30-10:00

Chair: Akira Oiwa and Makoto Kohda

WeD1-1 (Invited)

08:30 - 09:00

Coherent control of a GaAs quantum dot spin qubit operated in a feedback loop
Takashi Nakajima
RIKEN CEMS, Japan

WeD1-3 (Oral)

09:00 - 09:15

Towards quantum teleportation with quantum-dot spin qubits
Yohei Kojima,*,1,2 Takashi Nakajima,1 Akito Noiri,1 Jun Yoneda,1 Tomohiro Otsuka,1,3 Kenta Takeda,1 Sen Li,1 Stephen D.
Bartlett,4 Arne Ludwig,5 Andreas Dirk Wieck,5 and Seigo Tarucha1,2
1CEMS, RIKEN, Japan, 2Department of Applied Physics, University of Tokyo, Japan, 3RIEC, University of Tohoku, Japan,
4Centre for Engineered Quantum system, University of Sydney, Australia, 5Lehrstuhl für Angewandte Festkörperphysik, RuhrUniv. Bochum, Germany

WeD1-4 (Oral)

09:15 - 09:30

Breakdown of Pauli spin blockade by phonon irradiation in a GaAs double quantum dot
Sadashige Matsuo,*,1,2 Kazuyuki Kuroyama,1 Jo Muramoto,1 Sascha R. Valentin,3 Arne Ludwig,3 Andreas D. Wieck,3 Yasuhiro Tokura,4 and Seigo Tarucha1,5
1University of Tokyo, Japan, 2JST PRESTO, Japan, 3Ruhr University, Germany, 4University of Tsukuba, Japan, 5Riken, Japan

WeD1-5 (Oral)

09:30 - 09:45

Evaluation of Rabi frequency and coherence time in the hyperfine structure of 167Er3+ in
Y2SiO5 through coherent transients
Masaya Hiraishi,*,1,2 Mark IJspeert,1 Takehiko Tawara,1,2,3 Satoru Adachi,4 Hiroo Omi,1,3 and Hideki Gotoh1
1NTT Basic Research Laboratories, Japan, 2Tokyo University of Science, Japan, 3NTT Nanophotonics Center, Japan,
4Hokkaido University, Japan

WeD1-6 (Oral)

09:45 - 10:00

Parametric photons from confined polariton condensates driven by acoustic fields
Alexander Sergeevich Kuznetsov,* Klaus Biermann, and Paulo Ventura Santos
Paul-Drude-Institut für Festkörperelektronik, Germany

WeE1

Organic Devices

Room E

08:30-10:00

Chair: Yoshiaki Hattori and Masakazu Nakamura

WeE1-1 (Invited)

Ultraflexible Biosignal Amplifier Based on Organic Thin-Film Transistors
Takafumi Uemura*,1,2 and Tsuyoshi Sekitani1,2
1The Institute of Scientific and Industrial Research, Osaka University, Japan, 2PhotoBIO-OIL, AIST, Japan

08:30 - 09:00

Compound Semiconductor Week 2019

May 22 (Wed)

WeE1-3 (Oral)

09:00 - 09:15

Organic Sensor Array Distributed in Flexible and Curved Surface
Masatoshi Sakai,*,1 Yuichi Miyai,1 Yugo Okada,2 Yuichi Sadamitsu,3 Yuta Hashimoto,3 Nozomi Onodera,3 and Kazuhiro
Kudo1
1Department of Electrical and Electronic Engineering, Chiba University, Japan, 2Center for Frontier Science, Chiba University, Japan, 3Center for Innovative Research and Development Group Nippon Kayaku Co., Ltd., Japan

WeE1-4 (Oral)

09:15 - 09:30

Long-term stability of organic physically unclonable function for IoE security
Kazunori Kuribara,* Taiki Nobeshima, Atsushi Takei, Takehito Kozasa, Sei Uemura, and Manabu Yoshida
Flexible Electronics Research Center, AIST, Japan

WeE1-5 (Oral)

09:30 - 09:45

Enhanced performance of solution-processable organic floating-gate transistor memories
using binary small molecules dispersed polymer storage layers
Hayato Abe,1 Takashi Nagase,*,1,2 Miho Higashinakaya,1 Takashi Kobayashi,1,2 and Hiroyoshi Naito1,2
1Department of Physics and Electronics, Osaka Prefecture University, Japan, 2The Research Institute for Molecular Electronic
Devices, Osaka Prefecture University, Japan

WeE1-6 (Oral)

09:45 - 10:00

Top-gated organic light emitting transistors based on the device fabrication without intermixing of poly(methyl methacrylate) gate dielectric
Hirotake Kajii,* Takayuki Mashimo, and Masahiko Kondow
Graduate School of Engineering, Osaka University, Japan

Coffee Break

WeA2

GaN and Related Technologies III

10:00 - 10:30

Room A

10:30-12:00

Chair: Martin Kuball and Edward Chang

WeA2-1 (Invited)

10:30 - 11:00

Processing of GaN vertical devices: Static Induction Transistors
Srabanti Chowdhury* and Jaeyi Chun
Department of Electrical Engineering, Stanford University, United States of America

WeA2-3 (Oral)

11:00 - 11:15

The Eﬀect of Tetramethylammonium Hydroxide Treatment on Photoelectrochemical
Etched Gallium Nitride Trench Structures
Fumimasa Horikiri,*,1 Hiroshi Ohta,2 Naomi Asai,2 Yoshinobu Narita,1 and Takehiro Yoshida1
1SCIOCS, Japan, 2Hosei University, Japan

WeA2-4 (Oral)

11:15 - 11:30

Performance Limits of 2H-GaN Vertical Superjunction Schottky rectifiers, MOSFETs
and HEMTs
Xiang Zhou* and T. Paul Chow
Rensselaer Polytechnic Institute, United States of America

Compound Semiconductor Week 2019

May 22 (Wed)

WeA2-5 (Oral)

11:30 - 11:45

Demonstration of a Fully-Vertical GaN MOSFET on Si
Debaleen Biswas,* Naoki Torii, Keiji Yamamoto, and Takashi Egawa
Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Japan

WeA2-6 (Oral)

11:45 - 12:00

High performance Fully-vertical GaN-on-Si power MOSFETs
Riyaz Mohammed Abdul Khadar,* Chao Liu, Reza Soleimanzadeh, and Elison MatioliPower and Wide-band-gap Electronics Research Laboratory, École Polytechnique Fédérale de Lausanne, Switzerland

WeB2

Mid Infrared Photonics

Room B

10:30-12:00

Chair: Takahiko Shindo and Mitsuru Takenaka

WeB2-1 (Oral)

10:30 - 10:45

Toward MIR VCSELs operating in CW at RT
Daniel Andres DIAZ THOMAS,*,1 Oleksandr STEPANENKO,2 Thomas BATTE,3 Michael BAHRIZ,1 Stéphane CALVEZ,2Cyril PARANTHOEN,3 Eric TOURNIE,1 Guilhem ALMUNEAU,2 Christophe LEVALLOIS,3 Alexei BARANOV,1 and Laurent CERUTTI1
1IES, University of Montpellier, CNRS, 34000 Montpellier, France, 2CNRS, LAAS, 31400 Toulouse, France, 3University ofRennes, INSA, CNRS, Institut FOTON, 35000 Rennes, France

WeB2-2 (Oral)

10:45 - 11:00

Resonant-Cavity Infrared Detector (RCID) with Very Thin Absorber
Chadwick L. Canedy,*,1 William W. Bewley,1 Charles D. Merritt,1 Chul Soo Kim,1 Mijin Kim,2 Stephanie Tomasulo,1 Michael
V. Warren,3 Eric M. Jackson,1 Jill A. Nolde,1 Chaﬀra A. Aﬀouda,1 Edward H. Aifer,1 Igor Vurgaftman,1 and Jerry R. Meyer1
1Naval Research Laboratory, United States of America, 2KeyW Corporation, United States of America, 3ASEE Postdoctoral
Associate Residing at NRL, United States of America

WeB2-3 (Oral)

11:00 - 11:15

High detectivity AlInSb mid-infrared photodiode sensors with dislocation filter layers forgas sensing application
Hiromi Fujita,* Osamu Morohara, Hirotaka Geka, Yoshiki Sakurai, Daiki Yasuda, Mitsuhiro Nakayama, Koichiro Ueno, Yoshihiko Shibata, and Naohiro Kuze
Compound Semiconductor Development Dept., R&D Center, Asahi Kasei Microdevices Corporation, Japan

WeB2-4 (Oral)

11:15 - 11:30

Investigation of type-II superlattices InAs/InAsSb photoconductor system by 8×8 k·p
model and application of localization landscape theory for transport
Yuh-Renn Wu,1,2 Tsung-Yin Tsai,*,1 Chaohsin Wu,1 Krystian Michalczewski,3 and Piotr Martyniuk3
1Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University,
Taiwan, 2Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute, Hsinchu,
Taiwan, 3Institute of Applied Physics, Military University of Technology, Poland

WeB2-5 (Oral)

11:30 - 11:45

Short/mid-wave two-band type II InAs/GaSb superlattice infrared heterojunction phototransistor
Wenjun Huang,1 Jianliang Huang,1,2 Yanhua Zhang,1,2 Chengcheng Zhao,1 Biying Nie,1 Yulian Cao,1,2 and Wenquan Ma*,1,2
1Institute of Semiconductors, Chinese Academy of Sciences, China, 2The Center of Materials Science and Optoelectronics
Engineering, University of Chinese Academy of Sciences, China

Compound Semiconductor Week 2019

WeC2

Fabrication of Nanostructures

May 22 (Wed)Room C

10:30-12:00

Chair: Fangfang Ren and Takuo Sasaki

WeC2-1 (Invited)

10:30 - 11:00

Nanoscale Transfer Printing for the Heterogeneous Integration of Semiconductor
Nanowire Lasers
Antonio Hurtado,*,1 Dimitars Jevtics,1 Benoit Guilhabert,1 Joshua Robertson,1 John McPhillimy,1 Michael Strain,1 Hoe Tan,2Chennupati Jagadish,2 and Martin Dawson1
1University of Strathclyde, United Kingdom, 2Australian National University, Australia

WeC2-3 (Oral)

11:00 - 11:15

Enhanced optical properties of InP nanowires by conformal polymer coating
Tuomas Haggren,* Maria Kim, Nicklas Anttu, Vladislav Khayrudinov, Henrik Mantynen, Camilla Tossi, and Harri Lipsanen
Department of Electronics and Nanoengineering, Aalto University, Finland

WeC2-4 (Oral)

11:15 - 11:30

Vapor-Solid Selective Area Molecular Beam Epitaxy and N-Type Doping of Catalyst-Free
GaAs:Si Nanowires on Silicon
Daniel Ruhstorfer,* Simon Mejia, Hubert Riedl, Jonathan James Finley, and Gregor Koblmüller
Walter Schottky Institute & Physics Dept., TU Munich, Germany

WeC2-5 (Oral)

11:30 - 11:45

Control of the energy transfer between Tm3+ and Yb3+ ions in ZnO nanowires for photovoltaic applications
Jun Tatebayashi,* Tokuhito Nakajima, Masao Mishina, Dolf Timmerman, Shuhei Ichikawa, and Yasufumi Fujiwara
Osaka University, Japan

WeC2-6 (Oral)

11:45 - 12:00

Room temperature single photon emission from planar GaN/AlN quantum dot samples
grown by MBE
Gordon Callsen,* Sebastian Tamariz, and Nicolas Grandjean
Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland

WeD2

Spin Transport and Dynamics

Room D

10:30-12:00

Chair: Shingo Katsumoto and Shinobu Ohya

WeD2-1 (Invited)

10:30 - 11:00

Universal nuclear focusing of confined electron spins
Sergej Markmann,1 Christian Reichl,2 Werner Wegscheider,2 and Gian Salis*,1
1IBM Research-Zurich, Switzerland, 2ETH Zurich, Switzerland

WeD2-3 (Oral)

11:00 - 11:15

Modulation of Nuclear Quadrupole Eﬀect by a Longitudinal Magnetic Field in Transverse Nuclear Field Formation
Sota Yamamoto,*,1 Takuya Arakawa,2 Ryosuke Matsusaki,1 Reina Kaji,1 and Satoru Adachi1
1Division of Applied Physics, Graduate School of Engineering, Hokkaido University, Japan, 2Department of Applied Physics,
School of Engineering, Hokkaido University, Japan

Compound Semiconductor Week 2019

May 22 (Wed)

WeD2-4 (Oral)

11:15 - 11:30

Resistively detected-NMR in triple-gate quantum point contact: magnetic field dependence
Annisa Noorhidayati,*,1 Mohammad Hamzah Fauzi,2 Shunta Maeda,1 Ken Sato,1 Katsumi Nagase,1 and Yoshiro Hirayama1,2,3
1Department of Physics, Graduate School of Science, Tohoku University, Japan, 2CSRN Tohoku University, Japan, 3CSIS (Core
Research Cluster) Tohoku University, Japan

WeD2-5 (Oral)

11:30 - 11:45

Ballistic spin locking in a two-dimensional Rashba system
Makoto Kohda,*,1,2,3 Takanori Okayasu,1 and Junsaku Nitta1,2,3
1Department of Materials Science, Tohoku University, Japan, 2Center for Spintronics Research Network, Tohoku University,
Japan, 3Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, Japan

WeD2-6 (Oral)

11:45 - 12:00

Gate-controlled proximity magnetoresistance in an InAs / (Ga,Fe)Sb quantum well heterostructure
Kosuke Takiguchi,*,1 Le Duc Anh,1,2 Takahiro Chiba,3 Tomohiro Koyama,4 Daichi Chiba,4 and Masaaki Tanaka1,5
1Department of Electrical Engineering and Information Systems, The University of Tokyo, Japan, 2Institute of Engineering
Innovation, The University of Tokyo, Japan, 3National Institute of Technology, Fukushima College, Japan, 4Department ofApplied Physics, The University of Tokyo, Japan, 5Center for Spintronics Research Network, The University of Tokyo, Japan

WeE2

THz Devices

Room E

10:30-12:00

Chair: Martin Dvorak and Issei Watanabe

WeE2-1 (Invited)

10:30 - 11:00

THz Frequency HEMTs: Future Trends and Applications
Arnulf Leuther,*,1 Thomas Merkle,1 Rainer Weber,1 Rainer Sommer,2 and Axel Tessmann1
1Fraunhofer IAF, Germany, 2Fraunhofer FHR, Germany

WeE2-3 (Oral)

11:00 - 11:15

Fabrication of Resonant-Tunneling-Diode Terahertz Oscillators Using Rectangular Cavity Resonators and Bow-Tie Antennas for High Output Powers
Hiroki Tanaka,*,1 Kazunori Kobayashi,2 Ryunosuke Izumi,2 Safumi Suzuki,2 and Masahiro Asada1
1Institute of Innovative Research, Tokyo Institute of Technology, Japan, 2Department of Electrical and Electronic Engineering,Tokyo Institute of Technology, Japan

WeE2-4 (Oral)

Optical-to-Millimeter-Wave
Integrated HEMT

11:15 - 11:30

CarrierFrequency

Down-Conversion

by

UTC-PD-

Yuya Omori,1,2 Tomotaka Hosotani,1,2 Taiichi Otsuji,1,2 Katsumi Iwatsuki,2 and Akira Satou*,1,2
1Research Institute of Electrical Communication, Tohoku University, Japan, 2Research Organization of Electrical Communication, Tohoku University, Japan

WeE2-5 (Invited)

11:30 - 12:00

High-Performance In0.53Ga0.47As FinFETs for logic and RF Applications
Edward Yi Chang,* Ho Quang Luc, and Chin Yueh Lin
National Chiao Tung University, Taiwan

Excursion

12:30 - 18:45

Compound Semiconductor Week 2019

BanquetMay 22 (Wed)19:00 - 21:00

Compound Semiconductor Week 2019

May 23 (Thu)

May 23 (Thu)

ThA1

Growth of Nanostructures and Quantum-Effect Devices

Room A

08:30-10:30
Chair: Fumitaro Ishikawa and Philipp Staudinger

ThA1-1 (Invited)

08:30 - 09:00

Graphene Stabilized Two-Dimensional Crystals
Zakaria Al Balushi
Materials Science and Engineering, University of California, Berkeley, United States of America

ThA1-3 (Oral)

09:00 - 09:15

Heteroepitaxial growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si for acomplementary tunnel FETs
Katsuhiro Tomioka,* Akinobu Yoshida, and Hironori Gamo
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE),
Hokkaido Univ., Japan

ThA1-4 (Oral)

09:15 - 09:30

Demonstration of InAs nanowire vertical transistors
Hironori Gamo,* Junichi Motohisa, and Katsuhiro Tomioka
Graduate School of IST and RCIQE, Hokkaido University, Japan

ThA1-5 (Oral)

09:30 - 09:45µm Quantum Dot Laser on onRoom-Temperature Electrically Pumped InP-based 1.3µaxis (001) Silicon
Wei LUO,*,1 Ying XUE,1 Bei SHI,2 Si ZHU,1 and KeiMay LAU1
1Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong,
2Department of Electrical and Computer Engineering, University of California Santa Barbara, United States of America

ThA1-6 (Oral)

09:45 - 10:00

Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by PlasmaAssisted Molecular Beam Epitaxy
YongJin Cho,*,1 Shyam Bharadwaj,1 Zongyang Hu,1 Kazuki Nomoto,1 Uwe Jahn,2 Huili Grace Xing,1,3 and Debdeep Jena1,3
1School of Electrical and Computer Engineering, Cornell University, United States of America, 2Paul-Drude-Institut für Festkörperelektronik, Germany, 3Department of Materials Science and Engineering and Kavli Institute for Nanoscale Science,
Cornell University, United States of America

ThA1-8 (Oral)

10:15 - 10:30

Quantum entangled photon emitting diodes based on GaAs quantum dots on (111)A:
Robustness against increasing temperature
Neul Ha,* Takaaki Mano, Takashi Kuroda, and Kazuaki Sakoda
National Institute for Materials Science (NIMS), Japan

Compound Semiconductor Week 2019

ThB1

Novel Photonics

May 23 (Thu)

Room B

08:30-10:30

Chair: Takashi Asano and Mitsuru Takenaka

ThB1-1 (Invited)

08:30 - 09:00

Transfer printing of III-V devices for silicon photonics
Brian Corbett,* Ruggero Loi, Lei Liu, Brendan Roycroft, and James O’Callaghan
Tyndall National Institute, University College Cork, Ireland

ThB1-3 (Oral)

09:00 - 09:15

Photonic-crystal Lasers with Extremely Short Embedded Active-regions
Takuma Tsurugaya,*,1 Koji Takeda,1,3 Takuro Fujii,1,3 Eiichi Kuramochi,2,3 Akihiko Shinya,2,3 Masaya Notomi,2,3 Takaaki
Kakitsuka,1,3 Hiroshi Fukuda,1,3 and Shinji Matsuo1,3
1NTT Device Technology Labs., NTT Corporation, Japan, 2NTT Basic Research Labs., NTT Corporation, Japan, 3NTT
Nanophotonics Center, NTT Corporation, Japan

ThB1-4 (Oral)

09:15 - 09:30

Tuning Lasing Emission towards Long Wavelengths in GaAs-(In,Al)GaAs CoreMultishell Nanowires on SiliconThomas Stettner,1 Paul Schmiedeke,1 Andreas Thurn,1 Markus Doeblinger,2 Jochen Bissinger,1 Daniel Ruhstorfer,1 Jonathan
J. Finley,1 and Gregor Koblmueller*,1
1Walter Schottky Institute and Physics Department, Technical University of Munich, Germany, 2Department of Chemistry,
Ludwig Maximilians University Munich, Germany

ThB1-5 (Oral)

09:30 - 09:45

Investigation of second harmonic generation eﬃciency in ultrahigh-Q SiC photonic crystal nanocavities
Heungjoon Kim,*,1,2 Takashi Asano,1 Bong-Shik Song,1,2 and Susumu Noda1
1Department of Electronic Science and Engineering, Kyoto University, Japan, 2Department of Electrical and Computer Engineering, Sungkyunkwan University, Republic of Korea

ThB1-6 (Oral)

09:45 - 10:00

Buried tunnel junction current injection for InP-based nanomembrane photonic crystal
surface emitting lasers on Silicon
Carl Reuterskiöld Hedlund,*,1 Shi-Chia Liu,2 Deyin Zhao,2 Weidong Zhou,2 and Mattias Hammar1
1Department of Electronics, Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden, Sweden, 2Department ofElectrical Engineering, University of Texas at Arlington, TX 76019, USA, United States of America

ThB1-7 (Oral)

10:00 - 10:15

Horn-Shaped Metal-Clad Modulator Coupled to InP Waveguide
Yuguang Wang,* Mitsuhiro Watanabe, Yi Xiao, Takuo Tanemura, and Yoshiaki Nakano
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Japan

ThB1-8 (Oral)

10:15 - 10:30

Topological edge state laser using a photonic crystal nanocavity array
Changhyun Han,*,1,2 Myungjae Lee,1,2 Minsu Kang,1,2 and Heonsu Jeon1,2,3
1Department of Physics and Astronomy, Seoul National University, Republic of Korea, 2Inter-University Semiconductor Research Centre, Seoul National University, Republic of Korea, 3Institute of Applied Physics, Seoul National University, Republicof KoreaCompound Semiconductor Week 2019

ThC1

Oxides: Doping

May 23 (Thu)

Room C

08:30-10:30

Chair: Farida Selim and Chih-Chung Yang

ThC1-1 (Invited)

08:30 - 09:00

Zinc Oxide Grown by ALD - from Heavily n-type to p-type Material
Elzbieta Guziewicz,* Ewa Przezdziecka, and Tomasz A Krajewski
Institute of Physics, Polish Academy of Sciences, Poland

ThC1-3 (Oral)

09:00 - 09:15

Development of Carrier Concentration and Its Eﬀects on the Electrical Stability of Aldoped ZnO Transparent Electrode in Harsh Environment
Fahmi Machda,* Takaya Ogawa, Hideyuki Okumura, and Keiichi N. Ishihara
Graduate School of Energy Science, Kyoto University, Japan

ThC1-4 (Oral)

09:15 - 09:30

Transparent NixCd1-xO1+δδ alloy thin films with bipolar conductivity

Chao Ping LIU,*,1,2 Kingsley O. Ebgo,2 Chun Yuen Ho,2 Wladek Walukiewicz,3 and Kin Man Yu2,4
1Department of Physics, Shantou University, China, 2Department of Physics, City University of Hong Kong, Hong Kong,
3Materials Sciences Division, Lawrence Berkeley National Laboratory, United States of America, 4Department of Materials
Science and Engineering, City University of Hong Kong, Hong Kong

ThC1-5 (Oral)

09:30 - 09:45

Demonstration of Low-Resistive P-Type Cu4O3 Thin Films by Radio Frequency Sputtering for Low-Cost Thin Film Solar Cells
Md Abdul Majed Patwary,*,1 Katsuhiko Saito,1 Qixin Guo,1 Tooru Tanaka,1 Kin Man Yu,2,3 and Wladek Walukiewicz3,4
1Saga University, Saga, Japan, 2City University of Hong Kong, Kowloon, Hong Kong, 3Lawrence Berkeley National Laboratory, Berkeley, CA, United States of America, 4University of California, Berkeley, CA, United States of America

ThC1-6 (Oral)

09:45 - 10:00

Crystal Structures and Surface Plasmon Properties of GaZnO Nanostructures
Yu-Feng Yao,1 Keng-Ping Chou,1 Chi-Chung Chen,1 Charng-Gan Tu,1 Tsai-Pei Li,2 Yung-Chen Cheng,2 Wen-Yen Chang,1
Yao-Tseng Wang,1 Wai Fong Tse,1 Yean-Woei Kiang,1 and Chih-Chung (C. C.) Yang*,11National Taiwan University, Taiwan, 2National University of Tainan, Taiwan

ThC1-7 (Oral)

10:00 - 10:15

IGZO Thin Film Transistors for Monitoring Biotin-Protein Biochemical Interactions
Chun-Ho Chou,*,1 Nian-Ting Wu,1 Bo-Shun Jiang,1 and Jian-Jang Huang1,2
1Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan, 2Department of Electrical Engineering, National Taiwan University, Taiwan

ThC1-8 (Oral)

10:15 - 10:30

Suppressing Interdiﬀusion of Si in Er-doped CeO2 / Si(111) and Its Impact on the Optical
Property
Tomohiro Inaba,*,1 Xuejun Xu,1 Takehiko Tawara,1,2 Hiroo Omi,1,2 Hideki Yamamoto,1 and Hedeki Gotoh1
1NTT Basic Research Laboratories, Japan, 2NTT Nanophotonics Center, Japan

Compound Semiconductor Week 2019

ThD1

GaN and Related Technologies IV

May 23 (Thu)

Room D

08:30-10:30

Chair: Michał Boćkowski and Fumimasa Horikiri

ThD1-1 (Invited)

08:30 - 09:00

GaN Substrates of the Highest Structural Quality
Tomasz Sochacki
Institute of High Pressure Physics Polish Academy of Sciences, Poland

ThD1-3 (Oral)

09:00 - 09:15

Growth of high-quality >10 µ m-thick GaN-on-Si with low-dislocation density in the orderof 107 /cm2
Toshiki Hikosaka,* Jumpei Tajima, Hajime Nago, Toshiyuki Oka, and Shinya Nunoue
Corporate Research and Development Center, Toshiba Corporation, Japan

ThD1-4 (Oral)

09:15 - 09:30

Low resistive and low dislocation GaN wafer produced by OVPE method
Junichi Takino,*,1,2 Tomoaki Sumi,1 Yoshio Okayama,1,2 Masaki Nobuoka,1 Akira Kitamoto,2 Masayuki Imanishi,2 Masashi
Yoshimura,2 and Yusuke Mori2
1Panasonic Corporation, Japan, 2Graduate school of engineering, Osaka University, Japan

ThD1-5 (Oral)

09:30 - 09:45

Hydride vapor phase epitaxy reactor for bulk GaN growth
Vladislav Voronenkov,*,1,2 Natalia Bochkareva,2 Ruslan Gorbunov,1,2 Andrey Zubrilov,1,2 Viktor Kogotkov,1 Philippe
Latyshev,1 Yuri Lelikov,1,2 Andrey Leonidov,1 and Yuri Shreter1,2
1TRINITRI-Technology LLC, Russia, 2Ioﬀe Institute, Russia

ThD1-6 (Oral)

09:45 - 10:00

InxGa1-xN Alloys Grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) with
Growth Rates Up to 1.3 µ m/hr
Kelsey F. Jorgensen* and James S. Speck
Materials Department, University of California, Santa Barbara, United States of America

ThD1-7 (Oral)

10:00 - 10:15

Growth of high-quality GaN single crystals using the Flux-Film-Coated Na flux LPE(FFC-LPE) method.
Fumio Kawamura* and Takashi Taniguchi
National Institute for Materials Science, Japan

ThD1-8 (Oral)

10:15 - 10:30

Growth and characterization of quaternary AlGaInN epitaxial films with alloy compositions around lattice-matched to GaN
Hiroki Harada,*,1 Makoto Miyoshi,1 Takashi Egawa,1 and Tetsuya Takeuchi2
1Nagoya Institute of Technology, Japan, 2Meijo university, Japan

Compound Semiconductor Week 2019

ThE1

Organic and Perovskite materials

May 23 (Thu)

Room E

08:30-10:30

Chair: Takafumi Uemura and Takashi Nagase

ThE1-3 (Invited)

09:00 - 09:30

Liquid Crystals as Polycrystalline Materials for Organic Thin Film Transistors
Hiroaki Iino
Imaging Science and Engineering Research Center, Tokyo Institute of Technology, Japan

ThE1-5 (Oral)

09:30 - 09:45

Nucleation and shape of 2D islands of DPh-DNTT thin-films prepared by vacuum evaporation
Yoshiaki Hattori,* Yoshinari Kimura, and Masatoshi Kitamura
Kobe University, Japan

ThE1-6 (Oral)

09:45 - 10:00

Investigation of 1,8-Diiodooctane (DIO) Additive Eﬀect on Carrier Transport in Bulk
Heterojunction Organic Solar Cell by EFISHG
Ibrahim Alrougy,*,1,2 Dai Taguchi,1 and Takaaki Manaka1
1Tokyo Institute of Technology, Japan, 2King Abdulaziz City for Science and Technology (KACST), Saudi Arabia

ThE1-7 (Oral)

10:00 - 10:15

Visualization of Carrier Transport in Organic-Inorganic Perovskite Field-Eﬀect Transistor by Electric- Field-Induced Optical Second-Harmonic Generation ( EFISHG)
Lei Lei Yin Win,* Dai Taguchi, and Takaaki Manaka
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan

ThE1-8 (Oral)

10:15 - 10:30

Composition tunable inorganic Lead Halide Perovskites microstructures synthesized bysingle and two-step chemical vapor deposition methods
Mohammad Kamal Hossain,*,1,2 Pengfei Guo,3 Johnny C. Ho,4 and Kin Man Yu1,4
1Department of Physics, City University of Hong Kong, Hong Kong, 2Department of Physics, Comilla University, Bangladesh,
3Key Laboratory of Microelectronic and Energy of Henan Province School of Physics and Electronic Engineering, Xinyang
Normal University, China, 4Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong

Coffee Break

ThA2

Advanced Epitaxial Growth Techniques of III-V Materials

10:30 - 11:00

Room A

11:00-12:30
Chair: Takashi Suemasu and Zakaria Y. Al Balushi

ThA2-1 (Oral)

11:00 - 11:15

Crystal Phase Tuning in Planar Films of III-V Semiconductors
Philipp Staudinger,*,1 Nicolas Tappy,2 Svenja Mauthe,1 Kirsten Moselund,1 Anna Fontcuberta i Morral,2,3 and Heinz Schmid1
1IBM Research Zurich, Switzerland, 2Laboratoire des Matériaux Semiconducteurs, Institute of Materials, School of Engineering, EPFL, Switzerland, 3Institute of Physics, School of Basic Sciences, EPFL, Switzerland

Compound Semiconductor Week 2019

May 23 (Thu)

ThA2-2 (Oral)

11:15 - 11:30

λ InGaAlAs-based MQWs on patterned InP-onSelective-area MOVPE growth of multi-λinsulator substrate
Takuro Fujii,* Tomonari Sato, Koji Takeda, Takaaki Kakitsuka, and Shinji Matsuo
NTT Device Technology labs, Japan

ThA2-3 (Oral)

11:30 - 11:45

Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase
Epitaxy for Quasi-Phase-Matching Applications
Axel Strömberg,*,1 Giriprasanth Omanakuttan,1 Pooja Vardhini Natesan,1 Tajkia Syeed Tofa,1 Arnaud Grisard,2 Bruno Gerard,3Hoon Jang,1 Valdas Pasiskevicius,1 Fredrik Laurell,1 Sebastian Lourdudoss,1 and Yan-Ting Sun1
1Department of Applied Physics, Royal Institute of Technology-KTH, Sweden, 2Thales Research & Technology (TRT), France,
3III-V Lab, France

ThA2-4 (Oral)

11:45 - 12:00

Strained layer superlattices for dislocation reduction in III-V on V-groove patterned (001)siliconBei Shi,*,1 Lei Wang,1 Aidan Taylor,2 Simone Suran Brunelli,1 and Jonathan Klamkin1
1Department of Electrical and Computer Engineering, University of California Santa Barbara, United States of America,
2Materials Department, University of California Santa Barbara, United States of America

ThA2-5 (Oral)

12:00 - 12:15

High-quality Epitaxial Growth of AlGaInAs-based Active Structures on a DirectlyBonded InPoSi Substrate
Claire Besancon,*,1,3 Jean Decobert,1 Jean-Pierre Le Goec,1 Nicolas Vaissiere,1 Cecilia Dupre,2 Viviane Muﬀato,2 Frank
Fournel,2 Christophe Jany,2 Franck Bassani,3 Sylvain David,3 and Thierry Baron3
1III-V Lab, a joint lab of ’Nokia Bell Labs’, ’Thales Research and Technology’ and CEA LETI, France, 2Univ. Grenoble Alpes,
CEA, LETI, France, 3Univ. Grenoble Alpes; CNRS, CEA/Leti Minatec, LTM, France

ThA2-6 (Oral)

12:15 - 12:30

Template-assisted selective epitaxy for III-V vertical nanowires on Si tandem solar cells
Noelia Vico Trivino,*,1 Philipp Staudinger,1 Nicolas Bologna,1,2 Heike Riel,1 Kirsten Moselund,1 and Heinz Schmid1
1IBM Research-Zurich, Switzerland, 2Electron Microscopy Center, Empa, Switzerland

ThB2

Photodetectors

Room B

11:00-12:30

Chair: Patrick Runge and Yasumasa Kawakita

ThB2-1 (Invited)

11:00 - 11:30

High-speed Avalanche Photodiodes based on III-V Compounds for Optical Communications
Masahiro Nada,*,1 Fumito Nakajima,2 Toshihide Yoshimatsu,1 Hideaki Matsuzaki,2 and Kimikazu Sano1
1NTT Device Innovation Center, Japan, 2NTT Device Technology Labs., Japan

ThB2-3 (Oral)

11:30 - 11:45

Polarization Diverse Photodetector Chip Based on Waveguide Integrated MQW and Bulk
Photodiodes
Tobias Beckerwerth, Shahram Keyvaninia, Marko Gruner, Patrick Runge,* and Martin SchellFraunhofer Heinrich-Hertz-Institute, Germany

Compound Semiconductor Week 2019

May 23 (Thu)ThB2-4 (Oral)

11:45 - 12:00

Transition Metal Doped InGaAs Photoconductors for THz Detectors
Steﬀen Breuer,*,1 Robert B. Kohlhaas,1 Simon Nellen,1 Lars Liebermeister,1 Björn Globisch,1 Martin Schell,1 Mykhaylo P.
Semtsiv,2 and W. Ted Masselink2
1Fraunhofer HHI, Berlin, Germany, 2Humboldt University Berlin, Departement of Physics, Germany

ThB2-6 (Oral)

12:15 - 12:30

Limitations to Power Conversion Eﬃciency of InP Based Uni-traveling-carrier Photodiodes Due to Space Charge Resistance
Brandon J. Isaac,*,1 Yuan Liu,2 Sergio Pinna,2 and Jonathan Klamkin2
1Materials Department, University of California Santa Barbara, United States of America, 2Electrical and Computer Engi-

neering Department, University of California Santa Barbara, United States of America

ThC2

GaN Power Devices and Characterization

Room C

11:00-12:30

Chair: Masaaki Kuzuhara and Akio Wakejima

ThC2-1 (Invited)

11:00 - 11:30

The Commercialization of GaN Power Devices: Value Proposition, Manufacturing, andReliability
Thomas Detzel,*,1 Alain Charles,2 Gerald Deboy,1 Oliver Haeberlen,1 and Timothy McDonald2
1Infineon Technologies Austria AG, Austria, 2Infineon Technologies Americas Corp, United States of America

ThC2-3 (Oral)

11:30 - 11:45

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on
Flowable Oxide
Taifang Wang,* Luca Nela, Jun Ma, and Elison Matioli
Ecole polytechnique federale de Lausanne (EPFL), Switzerland

ThC2-4 (Oral)

11:45 - 12:00

Experimental Verification of Substrate Bias Eﬀect on the Gate Charge for GaN HEMTs
Wen Yang and Jiann-Shiun Yuan*
Department of Electrical and Computer Engineering, University of Central Florida , United States of America

ThC2-5 (Oral)

12:00 - 12:15

Experimental Determination of Hole Impact Ionization Coeﬃcient and Saturation Velocity in GaN
Dong Ji,*,1 Burcu Ercan,1 and Srabanti Chowdhury1,2
1Department of Electrical and Computer Engineering, University of California, Davis, United States of America, 2Department
of Electrical Engineering, Stanford University, United States of America

ThC2-6 (Oral)

12:15 - 12:30

Experimental Demonstration of Avalanche Noise in GaN PN Junctions Grown on Native
GaN Substrates
Lina Cao,* Jingshan Wang, Hansheng Ye, and Patrick Fay
Department of Electrical Engineering, University of Notre Dame, United States of America

Closing and Student Award Ceremony

Room A

12:30-13:30