Single P-channel MOSFET
ELM6PB010FAA-N■General description■Features

ELM6PB010FAA-N uses advanced trench technology toprovide excellent Rds(on), low gate charge and low gate
threshold voltage.

• Vds=-40V• Id=-22A (Vgs=-10V)• Rds(on) = 10mΩ (Vgs=-10V)• Rds(on) = 13mΩ (Vgs=-4.5V)■Maximum absolute ratings
Parameter

SymbolVds
Vgs

Drain-source voltage
Gate-source voltage
Tc=25°C
Tc=100°C
Ta=25°C
Ta=70°C

Continuous drain current
Continuous drain current

Pulsed drain current
Max. body-diode continuous current (Tc=25°C)
Avalanche current (L=0.1mH)
Avalanche energy (L=0.5mH)
Tc=25°C
Power dissipation
Tc=100°C
Ta=25°C
Power dissipation
Ta=70°C
Junction and storage temperature range

http://www.elm-tech.com

Id
Idm
IsIas
Eas
Pd
Tj, Tstg

Ta=25°C. Unless otherwise noted.
Limit
Unit
Note-40
V±20V-22.0
A
1-14.0-9.7
A
2-7.8-88
A
3-10
A
1-30
A
81mJ
12.0W
14.6
2.3
W
21.5-55 to +150°C■Thermal characteristics
Parameter
Thermal resistance, junction-to-ambient
Thermal resistance, junction-to-caseSymbolRθjaRθjcTyp.

Max.
55
11Unit°C/W

Note
2

NOTE : 1. The power dissipation Pd is based on Tj(max)=150°C, using junction-to-case thermal resistance, and is more useful insetting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of Rθja is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment
with Ta=25°C. The power dissipation Pdsm is based on Rθja and the maximum allowed junction temperature of 150°C.
The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature Tj(max)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial Tj=25°C.

■Pin configuration■Circuit

SOP-8(TOP VIEW)
18273645Pin No.
12Pin name
SOURCE
SOURCE

345

SOURCEGATE
DRAIN

67DRAIN
DRAIN

8DRAIN

DGS

Rev.1.0
1/5

Single P-channel MOSFET
ELM6PB010FAA-N

http://www.elm-tech.com■Electrical characteristics

Ta=25°C. Unless otherwise noted.
Parameter

SymbolCondition

Min.

Typ.

Max.

Unit Note

Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V-40--V

Zero gate voltage drain current

Idss

Vds=-32V, Vgs=0V---10μA

Gate-body leakage current

Igss

Vds=0V, Vgs=±20V--±100nA

Gate threshold voltage

Vgs(th) Vds=Vgs, Id=-250μA-1.0--2.5

V

Static drain-source on-resistanceRds(on)Vgs=-10V, Id=-10A-10.0

13.0

Vgs=-4.5V, Id=-8A-13.018.5

STATIC PARAMETERSmΩ

Forward transconductance

Gfs

Vds=-10V, Id=-10A-

24-

S

Diode forward voltage

Vsd

Is=-10A, Vgs=0V

-

-0.82

-1.20

V-

3400

-

pF

-

280-

pF

-

200-

pF

-

5.3-

Ω-

68.0

-

nC

1, 2-

10.5-

nC

1, 2-

14.5-

nC

1, 2-

17-

ns

1, 2-

21-

ns

1, 2-

97-

ns

1, 2-

17-

ns

1, 2-

16-

ns-

11-

nC

1

DYNAMIC PARAMETERS
Input capacitance

Ciss

Output capacitance

CossReverse transfer capacitance

Crss

Gate resistanceRg

Vgs=0V, Vds=-20V, f=1MHz
f=1MHzSWITCHING PARAMETERS
Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

Turn-on delay timetd(on)

Turn-on rise timetrTurn-off delay time

Vgs=-10V, Vds=-20V
Id=-10A

Vgs=-10V, Vds=-20V

td(off) Id=-10A, Rgen=1Ω

Turn-off fall timetf

Body diode reverse recovery timetrr

Body diode reverse recovery charge

Qrr

If=-10A, dIf/dt=100A/μs* 1. Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%.
2. Independent of operating temperature.

Rev.1.0
2/5

Single P-channel MOSFETCYStek
Electronics Corp.
ELM6PB010FAA-N

Spec. No. : C030Q8
Issued Date : 2017.10.17
Revised Date : 2021.10.21
http://www.elm-tech.com
Page No. : 4/9■Typical electrical and thermal characteristics
Typical Characteristics

Breakdown Voltage vs Ambient Temperature

Typical Output Characteristics-BVDSS, Normalized Drain-Source Breakdown
Voltage80-10V, -9V,-8V,-7V,-6V,-5V-ID, Drain Current (A)

-4V

60

40-3.5V

20
VGS=-3V01.11
ID=-250μA
VGS=0V0.90.80246810-75 -50 -25255075 100 125 150 175

TJ, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

Body Diode Currentvs Source-Drain Voltage
1.2-VSD, Source-Drain Voltage(V)15

VGS=-4.5V

10
VGS=-10V

51
TJ=25°C

0.8
0.6

TJ=150°C

0.4
0.200510150205

Static Drain-Source On-State Resistance vs Gate-Source
Voltage

RDS(on), Normalized Static Drain-Source OnState Resistance

ID=-10A

2010002461520Drain-Source On-State Resistance vs Junction Temperature403010-IS, Body Diode Current(A)-ID, Drain Current(A)RDS(on), Static Drain-Source On-State
Resistance(mΩ)

0-VDS, Drain-Source Voltage(V)20RDS(on), Static Drain-Source On-State
Resistance(mΩ)

1.2810-VGS, Gate-Source Voltage(V)

2.5
2VGS=-10V, ID=-10A
RDS(ON)@TJ=25°C : 10mΩ typ.

1.5
10.5
0-75 -50 -250255075 100 125 150 175

TJ, Junction Temperature(°C)

MTB010P04Q8

CYStek Product Specification

Rev.1.03/5

SingleP-channel
MOSFETCYStek
Electronics
Corp.

Spec. No. : C030Q8Issued Date : 2017.10.17
Revised Date : 2021.10.21
Page No. : 5/9

ELM6PB010FAA-N

http://www.elm-tech.com

Typical Characteristics (Cont.)Threshold Voltage vs Junction Temperature

Capacitance vs Drain-to-Source Voltage
1.4-VGS(th), Normalized Threshold Voltage

10000

Capacitance(pF)

Ciss

1000
CossCrss

100

101.2
1ID=-1mA

0.8
ID=-250μA

0.60.401020-75 -50 -25-VDS, Drain-Source Voltage(V)

75 100 125 150 175

Gate Charge Characteristics-VGS, Gate-Source Voltage(V)GFS, Forward Transfer Admittance(S)50

10100101VDS=-10VTA=25°C
Pulsed0.1

0.010.001

864
VDS=-20V
ID=-10A

200.010.1110100010-ID, Drain Current(A)2030

4050607080Qg, Total Gate Charge(nC)Maximum Safe Operating Area

Maximum Drain Current vs Junction Temperature

10012100μs

RDS(ON)
Limited

1ms

10ms

10.1

0.01
0.01

100ms

1s
10s
DCTA=25°C, TJ=150°C
VGS=-10V, RθJA=55°C/W
Single Pulse-ID, Maximum Drain Current(A)-ID, Drain Current(A)

25TJ, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

10010864
VGS=-10V
RθJA=55°C/W

200.1

11025100-VDS, Drain-Source Voltage(V)

5075

100

125

150175

TJ, Junction Temperature(°C)

MTB010P04Q8CYStek Product Specification

Rev.1.04/5

SingleP-channel
MOSFETCorp.
CYStekElectronics
ELM6PB010FAA-N

Spec. No. : C030Q8
Issued Date : 2017.10.17
Revised Date : 2021.10.21
Page No. : 6/9

http://www.elm-tech.com

Typical Characteristics (Cont.)
Single Pulse Power Rating, Junction to Ambient
1000
TJ(MAX)=150°C
TA=25°C
RθJA=55°C/W

Power (W)

800
600
400
200
00.00010.001

0.01

0.1

110100

Pulse Width(s)Transient Thermal Response Curves
1r(t), Normalized Transient Thermal Resistance

D=0.5

0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)4.RθJA=55°C/W

0.1

0.1
0.05
0.02
0.01
0.01

Single Pulse
0.001
0.0001

0.001

0.01

0.1

1

10100

1000t1, Square Wave Pulse Duration(s)Recommended Soldering Footprint■Recmmended soldering footpeint

mminches

MTB010P04Q8

CYStek Product Specification

Rev.1.05/5