＜MFT＞

RT8H052C
The over current protection of three shunt method

OUTLINE DRAWING

2.8
1.50

0.95

1.9

2.80

0.65

Unit：mm

0.65①⑥②⑤③④0.33

DESCRIPTION
RT8H052C is composed by NPN transistors,
PNP transistors and resistors.
It can miniaturization of a set and reduce parts ortime necessary for completion.
This MFT composed the circuit for the over current
protection of three shunt method.

1.20～0.1

1.1

0.81

FEATURES● Miniaturization of a set.
● Variable VREF by external resistance.

APPLICATIONThe over current protection of three shunt method.

PIN CONFIGURATION
6１524

①IN1
②IN2③IN3④VREF
⑤GND
⑥VCC

3BLOCK DIAGRAM

IN1IN2IN3VREF

VCCGND

191219（1/4）

＜M F T＞

RT8H052C
The over current protection of three shunt method

ABSOLUTE MAXIMUM RATINGS(Ta＝25℃)

SymbolParameter

Vcc

Ratings

Unit

Supply voltage

12V

VIN

Input voltage-0.3～Vcc

VPd

Internal power dissipation

200mWKθ

Thermal derating

1.6mW/℃

Tj

Junction temperature

150℃Tstg

Storage temperature(keep dry)

-40～150℃

Topr

Operating temperatureTj (keep dry)

-30～150℃

Designed value
Min Typ Max

Unit

ELECTRICAL CHARACTERISTICConditions

Ta≧25℃(Ta=25℃,VCC=5V unless otherwise noted.)

SymbolParameter

Vcc

Operating supply voltage range

Test conditions

3510V

ICC_off

Circuit current of off states IN1=IN2=IN3=0V、VREF=0.5V

0.2mA

ICC_onCircuit current of on states IN1=1V、IN2=IN3=0V、VREF=0.5V

2.9mA

VINCM

Common mode input voltage range

VIN1thIN1 threshold voltage

VREF=0.5V、IN2=IN3=0V

0.5

V

VIN2thIN2 threshold voltage

VREF=0.5V、IN1=IN3=0V

0.5V

VIN3thIN3 threshold voltage

VREF=0.5V、IN1=IN2=0V

0.5

V0.3

-VCC-0.8

V191219（2/4）

＜M F T＞

RT8H052C
The over current protection of three shunt method

APPLICATION CIRCUIT EXAMPLES

DIP-IPMHighside

MCU

M
LowsideR8C1R5 C2

R9R10R6 C3IN1IN2IN3R1R7VREF

Q1VCC

R3V1R4R2GND
MFTOPERATING EXPLANATIONThis MFT have VREF terminal ,so the threshold voltage can be freely set by external connected resistance.
MFT doesn't have the output terminal for six pins MFT(VCC,GND,VREF,IN1,IN2,IN3).
The terminal VCC uses two functions of the power-supply voltage terminal and the output terminal.
The circuit current flows about 200uA, when the threshold voltage does not get over thanneither of IN1～IN3 setting of VREF. When the voltage of VREF(V) or more is impressed toeither of terminal of IN1～IN3, it enters the state of detection, the circuit current flows
to VCC becomes about 2.9mA. By using the characteristic of this circuit current, the output
signal can be made by connecting the PNP transistor outside. The output terminal is the collector
terminal of the Q1:PNP transistor. At the usual state, the PNP transistor is turning off and output Low.
At the detecting state, the PNP transistor is turning on and output High.

SELECTION OF PARTS
How to select the resistance at above application circuit example.
Resistance R1 connected between emitter bases of the Q1:PNP transistor is set to turn on
the PNP transistor when the PNP transistor is usually turned off in the circuit current
in the state, and the detected circuit current flows about MFT.
please set resistance R1 at rage 390Ω～1.5kΩ.
The current thrown into the Q1:PNP transistor is adjusted by resistance R2 between collectors GND.
Calculation formula, if making VREF from resistance.
VREF(V)=R4/(R3+R4)*V1
R5, R6, and R7 are the shunt resistance. R8, R9, R10, C1, C2, and C3 are noise filters.
Please connect it if necessary.
The above value is a theory value. Please set it after an enough evaluation.
191219（3/4）

＜M F T＞

RT8H052C
The over current protection of three shunt method

THERMAL DERATINGPower consumption Pb [mW]

2502001501005000255075100125150

AMBIENT TEMPERATURE Ta [℃]

191219（4/4）

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Dec.2019