Gate driver module that bring out the performanceof Mitsubishi Electric Full-SiC Power Module

Rev C
TAM-GDM-00031

Copyright © 2023

Issued on 1st Nov ‘23 Unit division HQ JapanAll Rights Reserved.

Your One and Only CompanyIndex
1) Solution Guide for Full SiC Power Module
1-1 Application
1-2 Features of Gate Drivers (especially for SiC power module)
1-3 Product line-up
1-4 Evaluation board2) Introduction of One Tamura
Appendix)

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1. Solution Guide for Full-SiC Power Module
1-1. Application

Motor Controller

InverterPVWind

GENERAL-PURPOSE INVERTER

Photovoltaic Power Generation

Wind Power Generation

Robotics

Grid/SVG
Electric grid

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WeldingUPS

Welding Machine

Uninterruptible Power Supply

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EV Charger
EV StandESS
Energy Storage System31. Solution Guide for Full-SiC Power Module
1-2. Features of Gate Driver (especially for SiC power module)

Features of Full-SiC Power Module
Feature① Short circuit tolerance is lower than Si
Feature② Low threshold voltage VGS (th)（1V~3V)

Feature③ VGS(−) :Low tolerance（Less than −8V）

GateDriversolves allproblems!

Feature④ dV/dt can be set highFeature⑤ High frequency operation is possible

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1. Solution Guide for Full-SiC Power Module
1-2. Features of Gate Driver (especially for SiC power module)
Feature ① Short circuit tolerance
is lower than Si

Small chip
area

・Wide band gap
・High breakdown voltage
・High temperature operation

Support with a gate driver ･･･ Short-circuit mask time (tsc) adjustment function
SiC power module（1200V 300A）
Waveform with shorted load

IGBT power module (1200V 300A)
Waveform with shorted load
Load：170nH

Load：170nH
VGS : 15V/div

VGE : 15V/div

VDS : 200V/div
VCE : 200V/div

ID : 500A/div

tsc=1.5ust：800ns/div

Optimal value of SiC：1.0~3.0us

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Adjustable with externalcapacitor capacity

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IC : 500A/div

tsc=5.0us

t：800ns/div

Optimal value of IGBT：3.0~7.0us
51. Solution Guide for Full-SiC Power Module
1-2. Features of Gate Driver (especially for SiC power module)
Feature② Low threshold voltage VGS (th)（1V~3V)IGBT is
6V~7V

Beware of malfunctions
from IGBTSupport with a gate driver ･･･Reduction of parasitic capacitance and Miller clamp circuit
Reduction of parasitic capacitanceMiller clamp circuitdV/dt

2DMBxxxxxxCC
VCC

2DD(DC/DC)

No malfunction
at high dV/dt
Controller

InoiseVGSL

DriverVOHx
VOLx

Timingcontr olblock

MCLx

DriverCOMx

Inoise＝Cstray X
dV/dt

VEE

No malfunctions !

Vds
VDS
ID

dV/dt＝19.8KV/us

VDS

VgsL:15V/div
Vds:400V/div
Id:500A/div

No malfunctions
VGS
Vgs

t: 1us/div

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1. Solution Guide for Full-SiC Power Module
1-2. Features of Gate Driver (especially for SiC power module)
IGBT’s Gate driver cannot
be usedFeature③ VGS(−) :Low tolerance（Less than −8V）

Support with a gate driver ･･･Constant voltage control of VGS
Input voltage：13V~28V

Output voltage（etc.）：+15V、−7V

repression

VO1+
VO(+)

VIN(+)
VIN+
Step-down
CircuitVINVIN(−)

OVP

Rd

COM1COM

Dz

VO1VO(−)

−6.5V

VO2+
VGS(+)

+15V

OTP

Main
Control

OCP

Rd

COM2COM

Dz

VGS(−)
VO2-Controls the gate voltage to be constant even for input fluctuations
The gate voltage is constant even for output fluctuations(SW frequency, QG of power module)
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+15V

−6.5V

Improved SiC reliability
Low loss operation7

1. Solution Guide for Full-SiC Power Module
1-2. Features of Gate Driver (especially for SiC power module)
Feature④ dV/dt can be set highTurn-on: Recovery current is small
Turn-off: No tail current

Support with a gate driver ･･･Ability to suppress surge voltage with high dV/dt(Soft turn-off, Active clamp）

Soft turn-off

Active clamp (Option)

2DMBxxxxxxCC
DESATx
VOHx
VOLx
STOx

Soft turn-offOperates whenshort-circuited

DESATx
VOHx
VOLx
STOx

COMx

ACLx
COMx
Active Clamp gate

Surge voltage
suppression

VGSVgeSurge voltage
suppression

VCEVGE

ICCopyright © 2023

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Surge clamp

VDS
Vce

IDIc8

1. Solution Guide for Full-SiC Power Module
1-2. Features of Gate Driver (especially for SiC power module)
Feature⑤ High frequency operation is possible

Drive power needs to be increased

Support with a gate driver ･･･Output capacity considering SiC power module
Frequency （KHz）

220
200

ID=120A

180

1200V
120A

160

ID=604A

140
VDS=1080V

1201200V600A

100806040Gate driver derating curve

20001SiC

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2341200V
300A
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56789IGBT

1011121314 15QG（uC）
1700V
1800A

91. Solution Guide for Full-SiC Power Module
1-3. Product Line-up

Product

DC/DC Converter

Gate Driver Module

Gate Driver Unit

Function

2in1 PM designated
DC/DC Converter

DC/DC Converter+ Gate drive

Gate Driver Module+ Gate resistors
Protective function

Block diagram

Gatedrive

Gatedrive

Gatedrive

DC/DCConverter

DC/DCConverter

DC/DCConverter

Gatedrive

Gatedrive

Gatedrive

Appearance
2DD series
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2CG-B/D series
101. Solution Guide for Full-SiC Power Module
1-3. Product Line-up

GDM Leading sector (For Mitsubishi Electric)
Gate Driver Family Selection Guide

DC-DC converter
2DD

Gate driver module
2CG-B / 2CG-D

IGBT
Gate driver Unit
2EG-C

SiC
Gate driver Unit
2EG-B

IGBT Module/T/T1-series NX

FMF600DXE-24BN
FMF600DXE-34BN

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SiC
Gate driver+ Reference
2CG-B + 2RB

Full-SiC Power Modules

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SiC
Gate driver+ Reference
2CG-B + 2RB
FMF400DY-24B

Click here！

IGBT
Gate driver Unit
2LG-C

IGBT
Gate driver Unit
2LG-C (Multi-parallel)

IGBT Module T-series
LV100 for industrial

IGBT Module T-series
LV100 for industrial111. Solution Guide for Full-SiC Power Module
1-3. Product Line-up

Mass production board is available

Evaluation board is available

Output Voltage +15V / -7V
Model: 2CG010BBC15N(+15V / -4V)

Model: 2EG01XBxN**N (T.B.D)

Evaluation board : 2RB020BB

Product line-up
Power module
Part NoSeries
2EG-B

2RB *2CG-B

2DD

2CG010BBC**N(+15/-7V)

2DD1507**C(+15V/-7V)

2CG010BBC**N(+15/-7V)

2DD1507**C(+15V/-7V)

Vds = 1200V
FMF600DXE-24BN

2EG01XBxN**N
Vds = 1700V

FMF600DXE-34BN

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2EG01XBxN**N

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* For use with evaluation only12

1. Solution Guide for Full-SiC Power Module
1-4

Evaluation board
Part NoID
*2300
400
600
800
1200

FMF300BXZ-24B
FMF400BX-24B
FMF400BXZ-24B
FMF400DY-24B
FMF600DXZ-24B
FMF800DX-24B
FMF800DXZ-24B
FMF1200DXZ-24B

Evaluation board
VDS=1200V*1 *4*2*1 *4
Can be connected directly*3 *4*2

Gate Driver Module

DC-DC

2CG010BBC11N
2CG010BBC12N

2DD151008C
2DD151507C*3 *4
VDS=1700V

2CG010BBC11N
2DD151008C
2CG010BBC12N
2DD151507C*1: It is necessary to branch the lead wire of the gate signal from the evaluation board.
*2: A connection board with the SiC power module is required.
*3: A lead wire with a connector is required.
*4: SC terminal is not supported. However, we can propose external circuit for SC terminal.

300

FMF300DXZ-34B*3 *4

Gatedrive
DC-DC
converter
Gatedrive
Gate Driver Module
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Evaluation board
2RB020BB

Index1) Solution Guide for Full SiC Power Module
1-1 Application
1-2 Features of Gate Drivers (especially for SiC power module)
1-3 Product line-up
1-4 Evaluation board2) Introduction of One Tamura
Appendix)

Copyright © 2023

Contact person

All Rights Reserved.

14

2. Introduction of One Tamura
Gate driver
Device technology

Circuit technology

Module technology
Current sensor

Ga2O3
Gate Driver Unit
Novel Crystal Technology, Inc.

Soldering technology
Electric Chemicals
Soldering material
Die attach material
TIM material

Power electronics technology
and main products

Reactor Trans CoilLarge reactor/transformer

Reflow soldering system

Automotive reactor
Reactor for PF（2 in 1）

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Passive components

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Toroidal coil

SW-Trans15

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