GLS85LE1xxxG / GLS85LE1xxxQIndustrial Grade NVMe NANDrive™ EX Series
Advance Factsheet 00.101
March 2024Features
 Industry Standard PCIe Host Interface– PCIe Gen3x4– PCI Express Base Revision 3.1 compliant– NVMe 1.4c compliant
 Performance– Sequential data read: Up to 2,400 MB/s
– Sequential data write: Up to 1,480 MB/s










(measured using 128KB transfer size) Power Management– 3 power supplies (PWR_1/2/3 = 3.3V/1.8V/0.9V)– Autonomous power state transition (APST)– Active state power management (ASPM)– Supports L1.2 link state Power Consumption– Active mode (typical):
160GB: 2,698 mW
80GB: 2,630 mW
40GB: 1,645 mW
20GB: 1,278 mW– Idle/Slumber mode (typical): 108 mW/57 mW– Sleep mode (typical): 3.84 mW (160GB) Data Protection– End-to-end data path protection– AES-256 encryption engine– Hardware Crypto Erase (HCE)– Secure erase / Data sanitization– Host Controlled Thermal Management (HCTM)– Thermal throttling Supports up to 4 Namespaces Boot Partition
 Replay Protected Memory Block (RPMB)
 Host Memory Buffer (HMB)
 Volatile Write Cache (VWC)






Field Firmware Update (FFU)
Supports SMART and TRIM Commands
Power Loss Notification
Command Queuing– 1 Admin queue and 8 IO queues supporting
up to 128 commands per queue
Dynamic and Static Wear-Leveling
Bad Block Management
Built-in ECC– Uses advanced LDPC bit error detection andcorrection optimized for 3D NAND
NAND Configuration– 1 bit per cell (SLC)– Designed with Greenliant’s advanced
TMEnduroSLC Technology
High Endurance– GLS85LE1xxxG
P/E cycles: 75K, TBW (160GB): 6,700– GLS85LE1xxxQ
P/E cycles: 150K, TBW (160GB): 13,400
Operating Temperature Range– Industrial: -40°C to 95°C (Tc)
BGA Package– 16.0 mm x 20.0 mm x 1.40 mm, 291-ball,0.8 mm ball pitch, LTE (LFBGA)– 16.0 mm x 20.0 mm x 1.85 mm, 291-ball,0.8 mm ball pitch, F1TE (FBGA)All Devices are RoHS Compliant

Notes: 1. User capacity: 1GB = 1 billion bytes
2. PCIe = Peripheral Component Interconnect Express
3. NVMe = Non-Volatile Memory Express
4. P/E cycles = NAND Program/Erase cycles
5. TBW = TeraBytes Written
6. Tc = Case surface temperature

Product Description
memory’s program/erase (P/E) cycles and minimizes
write amplification.

The GLS85LE1xxxG / 85LE1xxxQ Industrial Grade
NVMe NANDrive™ EX Series (referred to as “NVMe
NANDrive” in this datasheet) are high-performance,high-reliability solid state drives (SSDs). Theycombine an advanced Greenliant NAND controller
with 20, 40, 80 or 160 GBytes of NAND flash memory
in a multi-chip package.

NVMe NANDrive’s advanced NAND management
technology improves endurance, enhances datasecurity and helps prevent data corruption during
unexpected power failure events. This innovativetechnology combines robust NAND controller
hardware error correction capabilities with advanced
wear-leveling algorithms and bad block management
to improve data reliability and significantly extend thelife of the product. NVMe NANDrive is ideal for highreliability industrial and networking systems which
need low latency and fast performance.

The integrated NAND flash controller with built-in
advanced
NAND
management
firmwarecommunicates with the host through the standard
PCIe interface. It does not require any additional orproprietary software such as the Flash File System(FFS) and Memory Technology Driver (MTD). The
firmware effectively optimizes the use of NAND flash
These specifications are subject to change without notice.
© 2024 Greenliant
GLS FS0019 Rev. 01

103/22/2024
S71526-01

GLS85LE1xxxG / GLS85LE1xxxQIndustrial Grade NVMe NANDrive™ EX Series
Advance Factsheet 00.101
March 2024

1.0

GENERAL DESCRIPTION

Each NVMe NANDrive module integrates an NVMe PCIe NAND flash memory controller with discrete NAND flash
die in a BGA package. Refer to Figure 2-1 for the NVMe NANDrive block diagram.

1.1

Optimized NVMe NANDrive

1.2

EnduroSLC™ is a proprietary 3D NAND management
technology developed by Greenliant for high reliability
applications requiring ultra-high endurance andsuperior data retention. Using 1-bit-per-cell (SLC)
NAND configuration, EnduroSLC enabled SSDs are
ideal for write-intensive applications used in extreme
temperature, high stress environments. EnduroSLC
enabled solid state drives offer a high reliability flash
storage solution with ultra-high write endurance thatexceeds capabilities of legacy, planar SLC NAND
based products.

The heart of NVMe NANDrive is the NVMe PCIeNAND flash memory controller, which translates
standard PCIe signals into flash media data andcontrol signals. The following components contributeto NVMe NANDrive’s operation.
1.1.1 Microcontroller Unit (MCU)
The MCU translates PCIe / NVMe commands into
data and control signals required for flash media
operation.
1.1.2 Internal Direct Memory Access (DMA)
NVMe NANDrive uses internal DMA allowing instantdata transfer from/to buffer to/from flash media. This
implementation eliminates microcontroller overhead
associated with the traditional, firmware-based
approach, thereby increasing the data transfer rate.

1.3

The PMU controls the power consumption of NVMe
NANDrive. The PMU dramatically reduces the power
consumption of NVMe NANDrive by putting the part ofthe circuitry that is not in operation into sleep mode.
The Flash File System handles inadvertent powerinterrupts and has auto-recovery capability to ensure
NVMe NANDrive firmware integrity.

1.4

Advanced NAND Management

NVMe NANDrive’s controller uses advanced wearleveling algorithms to substantially increase thelongevity of NAND flash media. Wear caused by data
writes is evenly distributed in all or select blocks in thedevice that prevents “hot spots” in locations that areprogrammed and erased extensively. This effective
wear-leveling technique results in optimized device
endurance, enhanced data retention and higher
reliability required by long-life applications.

1.1.4 Embedded Flash File System
The embedded flash file system is an integral part of
NVMe NANDrive. It contains MCU firmware that
performs the following tasks:
1. Translates host side signals into flash media
writes and reads
2. Provides flash media wear leveling to spreadthe flash writes across all memory address
space to increase the longevity of flash media
3. Keeps track of data file structures

1.5

Advanced Data Security

Advanced data security measures include end-to-end
data path protection, data sanitization (Secure Erase)
support and Hardware cryptographic erase. SecureErase is an effective method to quickly wipe all datafrom a PCIe-based SSD using the NVMe protocol(Format NVM). NVMe NANDrive’s controller supports
industrial standard AES-256 encryption to protect
sensitive user data. Hardware Cryptographic Erase
resets the cryptographic keys of the NVMe NANDrive
SSD, making all encrypted user data useless.

1.1.5 Error Checking and Correction (ECC)
The ECC technology uses advanced LDPC algorithms
to detect and correct errors, ensuring data integrityand extending the SSD lifespan.
1.1.6 Multi-tasking Interface
The multi-tasking interface enables concurrent Read,
Program and Erase operations to multiple NAND flash
media.

GLS FS0019 Rev. 01

SMT Reflow Consideration

Preprogrammed NAND devices have temperaturelimits due to data retention. The EnduroSLC NVMe
NANDrive family can withstand multiple passes of
SMT high temperature process without losing data.
Using Greenliant’s recommended reflow profile during
production will help prevent damage to the device andensure better retention of any preprogrammed data
through the surface-mount soldering process. See therelevant
datasheetsectiondescribing
therecommended reflow temperature limits.

1.1.3 Power Management Unit (PMU)

These specifications are subject to change without notice.
© 2024 Greenliant

EnduroSLC™ Technology

203/22/2024
S71526-01

GLS85LE1xxxG / GLS85LE1xxxQIndustrial Grade NVMe NANDrive™ EX Series
Advance Factsheet 00.101
March 2024

2.0

FUNCTIONAL BLOCKS

Figure 2-1: NVMe NANDrive Block Diagram

These specifications are subject to change without notice.
© 2024 Greenliant
GLS FS0019 Rev. 01

303/22/2024
S71526-01

GLS85LE1xxxG / GLS85LE1xxxQIndustrial Grade NVMe NANDrive™ EX Series
Advance Factsheet 00.101
March 2024

3.0

Product Ordering Information

GLS 85 LE 1 xxxG - S - I - xxTE - NDxxx
XX XX X XXXX - X - X - XXXX - XXXXX1)Ordering Code
NDxxx = NANDrive Revision
Environmental Attribute
E = non-Pb solder (RoHS Compliant)
Package Modifier
T = 291-ball package
Package Type
L = LFBGA (max. package height 1.40mm)
F1 = FBGA (max. package height 1.85mm)
Operating Temperature
I = Industrial: -40°C to +95°C
NAND Configuration
S = 1 bit per cell
Product Generation
G, Q = Generation
Capacity
020 = 20 GByte
040 = 40 GByte
080 = 80 GByte
160 = 160 GByte
GByte Designator
1 = GByteInterface
E = NVMe
Voltage
L = 3.3V
Product Family
85 = NANDrive1)

Note that the top side marking on the package typically does not include ordering codes (e.g. NDxxx), unless it is a
special custom specification (C-SPEC) required by the end-customer to be marked on the device.

These specifications are subject to change without notice.
© 2024 Greenliant
GLS FS0019 Rev. 01

403/22/2024
S71526-01

GLS85LE1xxxG / GLS85LE1xxxQIndustrial Grade NVMe NANDrive™ EX Series
Advance Factsheet 00.101
March 2024
Valid Combinations
Valid product combinations are those that are in the mass production or will be in the mass production. Consult
your Greenliant sales representative to confirm availability of the valid combinations and to determine availabilityof new product combinations.
Table 3-1: NVMe NANDrive Product Valid Ordering Numbers
Capacity
Operating TemperaturePart Number
20GB

Industrial (Tc = -40°C to 95°C)

40GB

Industrial (Tc = -40°C to 95°C)

80GB

Industrial (Tc = -40°C to 95°C)

160GB

Industrial (Tc = -40°C to 95°C)

These specifications are subject to change without notice.
© 2024 Greenliant
GLS FS0019 Rev. 01

GLS85LE1020G-S-I-LTE-ND301
GLS85LE1020Q-S-I-LTE-ND302
GLS85LE1040G-S-I-LTE-ND301
GLS85LE1040Q-S-I-LTE-ND302
GLS85LE1080G-S-I-LTE-ND301
GLS85LE1080Q-S-I-LTE-ND302
GLS85LE1160G-S-I-F1TE-ND301
GLS85LE1160Q-S-I-F1TE-ND302

5Package
LTE, 16x20x1.40mm
LTE, 16x20x1.40mm
LTE, 16x20x1.40mm
F1TE, 16x20x1.85mm

03/22/2024
S71526-01

GLS85LE1xxxG / GLS85LE1xxxQIndustrial Grade NVMe NANDrive™ EX Series
Advance Factsheet 00.101
March 2024

3.1

Package Diagrams

Note: All linear dimensions are in millimeters
Untoleranced dimensions are nominal target values
Coplanarity: 0.10mm (LTE), 0.15mm (F1TE)Solder ball opening size is 0.5mm

Figure 3-2: NVMe NANDrive 291-Ball, Ball Grid Array (BGA)
These specifications are subject to change without notice.
© 2024 Greenliant
GLS FS0019 Rev. 01

603/22/2024
S71526-01

GLS85LE1xxxG / GLS85LE1xxxQIndustrial Grade NVMe NANDrive™ EX Series
Advance Factsheet 00.101
March 2024

Revision History
NumberDescription

Date00.100

Initial Release as Advance Factsheet

January 26, 202400.101

Updated Idle and Sleep mode on page 1

March 22, 2024

© 2024 Greenliant. All rights reserved.
Greenliant and the Greenliant logo are registered trademarks, and NANDrive and EnduroSLC are trademarks ofGreenliant. All other trademarks and registered trademarks are the property of their respective owners.
Specifications are subject to change without notice. Memory sizes denote raw storage capacity; actual usable
capacity may be less.
Greenliant makes no warranty for the use of its products other than those expressly contained in the Greenliant
Terms and Conditions of Sale.
www.greenliant.com

These specifications are subject to change without notice.
© 2024 Greenliant
GLS FS0019 Rev. 01

703/22/2024
S71526-01