March 9, 2009

MGC develops MGR Series, a new low molecular resist material for EUV
lithography applications
World’s highest resist performance
Suitable for both positive and negative applications
Application of aromatic aldehyde development and mass production technology

Mitsubishi Gas Chemical Company, Inc. (“MGC”) today announced its MGR Series, a new low
molecular resist material for application in extreme ultra-violet (“EUV”) lithography, which isexpected to be used in the commercial production processes for next-generation 22nm
semiconductors.
The MGR Series uses aromatic aldehyde as its main material, for which MGC has
proprietary development and commercial technology. It simultaneously meets the threerequirements of photoresist material for EUV, namely high resolution, high sensitivity, and low
LWR/ LER. Since it has one-tenth the molecular weight of conventional polymers, the MGR
Series reduces line width roughness (LWR) and line edge roughness (LER). It can be used aseither a positive-type or negative-type resist.
An EUV exposure evaluation carried out with the cooperation of Semiconductor Leading
Edge Technologies, Inc., a production technology development consortium funded by Japan’ssemiconductor industry, showed that negative-type photo resist that uses MGR108 had theworld's highest performance (see diagram 1). The positive-type material has been confirmed
to have the same characteristics as the negative-type material.
One problem commonly faced in EUV lithography is “outgas,” the gas emitted due to resist
decomposition at the time of exposure; MGR Series has been verified to produce low levels ofoutgas.
Based on the above findings MGC has begun sample shipments of MGR108. The mostrecent results of this research were announced at SPIE Advanced Lithography 2009, aninternational conference which took place in California, U.S. from February 22 to 27, 2009,
and are generating considerable interest throughout the industry.
It is expected that EUV lithography will be adopted for the mass production of
next-generation 22nm semiconductors from around 2014. MGC will accelerate its research
into improving and developing MGR Series toward realizing its adoption in EUV photoresist
applications and thereby enabling new levels of miniaturization.

Sensitivity: 14.8mJ/cm2

Diagram 1:LWR（3σ）= 3.1nm、LER（3σ）= 2.4nm
Sensitivity：54μC/cm2

Performance evaluation of negative-type photo resist using MGR108
EUV exposure pattern (left) and EB 40nm pattern (right)

For reference:

Basic structure(Phenylcalix [4] resorcinarene)

MGR108

Diargram 2: MGR Series structure

Glossary:
Extreme ultraviolet (EUV) lithography
Technology that uses extreme ultra-violet (EUV) light of a frequency of 13.5nm to form circuit
patterns on silicon wafers. Photoresist for EUV applications needs to simultaneously fulfill
three requirements: high resolution, high sensitivity, and low LWR/ LER. However, since it
usually involves some degree of compromise between these three characteristics, thedevelopment of photoresist is a key priority issue in EUV lithography.
LWR (line-width roughness)/ LER (line-edge roughness)
Roughness or unevenness in circuit pattern line-width or line-edge. Roughness in circuit
patterns can cause disconnections or shorts in the circuit.

For further information please contact:
Ms. Sachiko Koshiishi
Corporate Communications Division
Mitsubishi Gas Chemical Company, Inc.