Gate driver module and Evaluation board that bring out theperformance of Infineon Technologies AG SiC Power Module

Supported by Infineon Technologies AG

TAM-GDM-00017

Copyright © 2021

Issued on 1st Feb ‘23 Unit division HQ JapanAll Rights Reserved.

Your One and Only Company
Rev B

Rev BIndex
1) Solution Guide for SiC Power Module
1-1 Application
1-2 Features of Gate driver module.
1-3 Waveform of 2 pulse test / Short circuit test
(SiC Power Module : FF3MR12KM1)
1-4 Product line-up
1-5 Reference board2) Introduction of One Tamura
Appendix)

Copyright © 2021

Contact personAll Rights Reserved.

2

1. Solution Guide for SiC Power Module

Rev B

1-1. Application

Inverter

PVMotorController

WIND

Grid/SVG

Robotics

Storage

WeldingUPS
Copyright © 2021

All Rights Reserved.

EV charger
EV stand3

1. Solution Guide for SiC Power Module

Rev B

1-2. Features of Gate driver module.
Features of All-SiC Power Module
Feature① Short circuit tolerance is lower than Si
Feature② Low threshold voltage VGS (th)（1V~3V)
Feature③ VGS(+) :On resistance does not decrease at 15V
VGS(−) :Low tolerance（Less than −5~4V）

Feature④ dV/dt can be set highFeature⑤ High frequency operation is possible

Copyright © 2021

All Rights Reserved.

Gate Driver
Modulesolves allproblems!

1. Solution Guide for SiC Power Module

Rev B

1-2. Features of Gate driver module.
Feature ① Short circuit tolerance
is lower than Si

Small chip
area・Wide band gap
・High breakdown voltage
・High temperature operation

Support with a gate driver ･･･ Short-circuit mask time (tsc) adjustment function
SiC power module（1200V 300A）
Waveform with shorted load

IGBT power module (1200V 300A)
Waveform with shorted load
Load：170nH

Load：170nH
VGS : 15V/div

VGE : 15V/div

VDS : 200V/div
VCE : 200V/div

ID : 500A/div

tsc=1.5ust：800ns/div

Optimal value of SiC：1.0~3.0us

Copyright © 2021

Adjustable with externalcapacitor capacity

All Rights Reserved.

IC : 500A/div

tsc=5.0us

t：800ns/div

Optimal value of IGBT：3.0~7.0us

1. Solution Guide for SiC Power Module

Rev B

1-2. Features of Gate driver module.
Feature② Low threshold voltage VGS (th)（1V~3V)IGBT is
6V~7V

Beware of malfunctions
from IGBTSupport with a gate driver ･･･Reduction of parasitic capacitance and Miller clamp circuit
Reduction of parasitic capacitanceMiller clamp circuitdV/dt

2DMBxxxxxxCC
VCC

2DD(DC/DC)

No malfunction
at high dV/dt
Controller

DriverTimingcontr olblock

MCLx

DriverCOMx

InoiseInoise＝Cstray X
dV/dt
SiC 1200V / 300A
No malfunctions !
VGSL

VEEVdsVDS

VGSH

No malfunctions

VDS : 200V/div

ID : 100A/div
t : 100ns/div

Copyright © 2021

VOHx
VOLx

All Rights Reserved.

VDS
dV/dt＝
15KV/usID

VGSVgs1. Solution Guide for SiC Power Module

Rev B

1-2. Features of Gate driver module.
Feature③ VGS(+) :On resistance does not decrease at 15V
VGS(−) :Low tolerance（Less than −5~4V）

IGBT’s Gate driver cannot
be usedSupport with a gate driver ･･･Constant voltage control of VGS
Input voltage：13V~28V

Output voltage（etc.）：+18V、−3V

repression

VO1+
VO(+)

VIN(+)
VIN+
Step-down
CircuitVINVIN(−)

OVP

Rd

COM1COM

Dz

VO1VO(−)−3V

VO2+VGS(+)

+18V

OTP

Main
Control

OCP

Rd

COM2COM

Dz

VGS(−)
VO2-Controls the gate voltage to be constant even for input fluctuations
The gate voltage is constant even for output fluctuations(SW frequency, QG of power module)
Copyright © 2021

All Rights Reserved.

+18V−3V

Improved SiC reliability
Low loss operation

1. Solution Guide for SiC Power Module

Rev B

1-2. Features of Gate driver module.
Feature④ dV/dt can be set highTurn-on: Recovery current is small
Turn-off: No tail current

Support with a gate driver ･･･Ability to suppress surge voltage with high dV/dt(Soft turn-off, Active clamp）

Soft turn-off

Active clamp (Option)

2DMBxxxxxxCCDESATx
VOHxVOLx
STOx

Soft turn-off
Operates whenshort-circuitedDESATx
VOHx
VOLx
STOx

COMx

ACLx
COMx
Active Clamp gate

Surge voltage
suppression

VGSVgeSurge voltage
suppression

VCEVGEIC

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VDSVceIDIc

Surge clamp

1. Solution Guide for SiC Power Module

Rev B

1-2. Features of Gate driver module.
Feature⑤ High frequency operation is possible

Drive power needs to be increased

Support with a gate driver ･･･Output capacity considering SiC power module
Frequency （KHz）

220
200

ID=120A

180

1200V
120A

160

ID=604A

140
VDS=1080V

120
1200V
600A

100806040Gate driver derating curve

20001SiC

Copyright © 2021

2341200V
300A
All Rights Reserved.

56789IGBT

1011121314 15
QG（uC）
1700V
1800A

1. Solution Guide for SiC Power Module

SiC MOSFET： FF3MR12KM1

1-3. Waveform of Tamura gate driver (2 Pulse test)
DC Link：600V,

Ron : 4.3Ω, Roff : 3.6Ω,

2CG010BBC15N+ Evaluation board
Gate Driver

CN301

0 5V

C101-116 : 560uF(Ls : 60nH)
C117 : 1uF(Ls : 20nH)

Power module

CH/DH
2,4 VIN(-)

0V

Tj=25℃

Id

1,3 VIN(+)
15V

Upper arm,

Highly stable gate drive withproprietary drive circuit and miller
clamp circuit (patent pending)

5,7 VCC
6,8 GND
9 ALM210 GND
11 INB
12 GND
13 ALM114 GND
15 INA
16 GND17 MOD
18 GND
19 RTC
20 GND

VgeH : 10V/div
Vds

GH

VgeL : 10V/div

VgsH
EH/SH

C103 C102 C101

C116 C115 C114

C117

VCC

・・・・・・・・・

Vds : 250V/div
GLVgsL

L101

EL/SL

Id : 200A/divt : 4us/div

Turn OFF / Ic =375A

Turn OFF / Ic =750A

Turn ON / Ic =375A
VgeH : 10V/div

VgeH : 10V/div

VgeL : 10V/div

VgeH : 10V/div
VgeL : 10V/div

VgeL : 10V/div
Vds : 250V/div

Vds : 250V/div
Id : 200A/div

Id : 200A/div

Item
Vdsp
dV/dt
di/dt
Eoff

Copyright © 2021

Measurement
value
866
V
8.8
kV/us
6.2
kA/us
13mJ

t : 100ns/div

All Rights Reserved.

Vds : 250V/div

Item
dV/dt
di/dt
Eon

Measurement
value
4.6
kV/us
5.0
kA/us
19mJ

t : 100ns/div

Id : 200A/div

Item
Vdsp
dV/dt
di/dt
Eoff

Measurement
value
992
V
9.2
kV/us
10.3kA/us
33mJ

t : 100ns/div

PrimePACK™ is registered trademark of Infineon Technologies AG, Germany.

Rev B

1. Solution Guide for SiC Power Module
1-3. 2 Pulse test (Enlarged waveform)
SW side gate (turn ON)
No ringing and no overshoot

SiC MOSFET： FF3MR12KM1

Turn ON / Ic =375A
VgeH : 10V/div
VgeL : 10V/div

OFF side gate
Stable L state without malfunction
Id : 200A/div
Vds : 250V/divt : 100ns/div

Turn OFF / Ic =750A

VgeH : 10V/div

OFF side gate
Stable L state without malfunction

VgeL : 10V/div

Vds : 250V/div

Id : 100A/divt : 100ns/div

Copyright © 2021

All Rights Reserved.

PrimePACK™ is registered trademark of Infineon Technologies AG, Germany.

Rev B

1. Solution Guide for SiC Power Module
1-3 Waveform of Tamura gate driver (Short circuit test)
DC Link：600V,

Ron : 4.3Ω, Roff : 3.6Ω,Driver
2CG010BBC15N+Gate
Evaluation
board

Lower arm,

Tj=25℃

Power module

CN301
1,3 VIN(+)
15V

CH/DH
2,4 VIN(-)

0 5V

0V

5,7 VCC
6,8 GND
9 ALM210 GND
11 INB
12 GND
13 ALM1
14 GND
15 INA
16 GND17 MOD
18 GND
19 RTC
20 GND

GHL101
VgsH

EH/SH

C117

C103 C102 C101

C116 C115 C114
・・・・・・・・・

VCC

This driver suppresses the Vds
peak voltage in the shortcircuit by our original circuit
technology, and can control
the mask time to prevent false
short circuit detection.
(Patent pending)

Vds
GL
VgsL

C101-116 : 560uF(Ls : 60nH)
C117 : 1uF(Ls : 20nH)

EL/SL

Id

SW side gate (turn ON)
No ringing and no overshoot

ItemVdsp
Idp
tsc

Measurement
value
806
V4124
A
2.28
us

VgeL : 10V/div
VgeH : 10V/div

OFF side gate
Stable L state without malfunction
Constant control of mask time toprevent false short circuit detection
regardless of short circuit conditions

Vds
ソフトターンオフ動作によりpeak reduction withsoft
Vceturn-off
peak を低減
function

Vds : 250V/div

Id : 1kA/div

Copyright © 2021

Rev B

SiC MOSFET： FF3MR12KM1All Rights Reserved.

t : 1us/div
PrimePACK™ is registered trademark of Infineon Technologies AG, Germany.

Item
Vdsp
Idp
tsc

Measurement
value806
V4124
A
2.28
us

1. Solution Guide for SiC Power Module

Rev B

1-4. Product Line-up
Gate Driver Module 2CG-B series
MODELOutput

2CG010BBC11N

2CG010BBC12N

2CG010BBC13N

2CG010BBC14N

2CG010BBC15N

Output voltage(+)

+15V

+15V

+18V

+18V

+15V

Output voltage(-)

-10V

-15V

-4V-2V-4V

Output power/1ch

3.8W

3.3W

3.5W

3.2W

T.B.D

Number of output

Input

Insulation

Peak output
current±43A

Input voltage

DC13~28V

Logic input voltage

DC3.3~5V

Withstand voltage

Primary to secondary AC5KV / Secondary to secondary AC4KVPartial discharge
extinction voltage

1768V peak
Direct mode / Half bridge mode

Mode selectFunction

Copyright © 20212DESAT protection

Yes

Soft turn off

Yes

Active clamp

No

Miller clamp

Yes
All Rights Reserved.

1. Solution Guide for SiC Power Module

Rev B

1-4. Evaluation board (2RB020BB)
PackageID

TAMURA DriverPart No

Evaluation board

2CG-B

2DD

2CG010BBC15N(+15/-4V)

2DD1504xxC(+15V/-4V)

2CG010BBC13N(+18/-4V)

2DD180407C(+18V/-4V)

VD-S = 1200V
250375500

FF6MR12KM1
FF6MR12KM1P
FF3MR12KM1
FF3MR12KM1P
FF2MR12KM1
FF2MR12KM1P

2RB020BB

VD-S = 2000V
250375500

FF6MR20KM1H
FF6MR20KM1HP
FF4MR20KM1H
FF4MR20KM1HP
FF3MR20KM1H
FF3MR20KM1HP

2RB020BB

Gatedrive
DC-DCconverter

Gate Driver Module(2CG-B series)
Copyright © 2021

Gatedrive

All Rights Reserved.

Evaluation board(2RB series)

Can be connected directly !

Rev BIndex
1) Solution Guide for SiC Power Module
1-1 Application
1-2 Features of Gate driver module.
1-3 Waveform of 2 pulse test / Short circuit test
(SiC Power Module : FF3MR12KM1)
1-4 Product line-up
1-5 Reference board2) Introduction of One TamuraAppendix)

Copyright © 2021

Contact person

All Rights Reserved.

2) Introduction of One Tamura (General application)
Power electronics technology and main products

Gate driver
Circuit technology

Devicetechnology

Rev B

Moduletechnology
Current sensor

Novel Crystal Technology, Inc.

Ga２O3

Gate Driver Unit

Solderingtechnology

Power electronics technology
and main products
Reflow solderingsystemPassivecomponents
ReactorTrans
CoilAutomotive
reactor

Large reactor/ transformer

Electric Chemicals
Soldering material
Die attach material
TIM material

Toroidal coil

SW-Trans

Reactor for PF（2 in 1）

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16Appendix) Information & Contact

Please visit our website!

Rev BWEB

Tamura Gate Driver・Let's know more TAMURA products
Special movie
Presentation of conference
・Easy Get the essential
Matching data with power module
3D data to design!
・One-click to purchasefrom the check stock!

Feel free to inquire! ↓https://www.tamuracorp.com/electronics/en/contact/
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