COBAND᬴ܱƴƓƚǔSOI-STJ᧏ႆ2
Tsukuba Univ.
M1 Rena WakasaႸഏ ȋȥȸȈȪȎߐْή੕ኧ ឬˡ‫ݰ‬Ȉȳȍȫ੗ӳእ‫܇‬ ಊ˯ภưѣ˺Ƣǔ‫֥ࠢف‬Ʒ᧏ႆ ಊ˯ภưƷ‫֥ࠢف‬Ʒ̮ӭ‫ࠢف‬ᚾ᬴Ʒኽௐ ǇƱǊ2ȋȥȸȈȪȎߐْ੕ኧ ȋȥȸȈȪȎߐْ,¾ ߐْƴˤƏή‫܇‬ƷǨȍȫǮȸƸ

−=2ƜǕǑǓŴߐْήƷǨȍȫǮȸǛย‫ܭ‬ƢǕƹȋȥȸȈȪȎƷឋ᣽ǋൿ‫ܭ‬ưƖǔŵȋȥȸȈȪȎਰѣƴǑǓൿ‫ܭ‬¾ ȋȥȸȈȪȎƷ‫ݤ‬ԡƸƱƯǋᧈƍƨǊŴ Δ= 2.44 ± 0.06 × 10 eVΔ= 7.52 ± 0.18 × 10 eV‫ٻ‬᣽ƷȋȥȸȈȪȎเƕ࣏ᙲŵ‫ܬܢ‬Ꮡ୎ᠠ‫ݧ‬ȋȥȸȈȪȎ ʖेƞǕǔߐْήǨȍȫǮȸ¾=25meV ( =50μm)
ឬˡ‫ݰ‬Ȉȳȍȫ੗ӳእ‫܇‬౨Ј֥(STJ)
3

Superconducting Tunnel Junction (STJ) STJ౨Ј֥Ʒѣ˺Ҿྸឬˡ‫ ˳ݰ‬ዌጂᐏ ឬˡ‫˳ݰ‬B¾ ǯȸȑȸ‫ݣ‬ƕή‫܇‬ǛӖƚӕǔƜƱƴǑǓŴแቩ‫܇‬Ǜဃ঺
¾ ɥᢿឬˡ‫˳ݰ‬Ɣǒɦᢿឬˡ‫˳ݰ‬ǁᩓ‫ן‬ǛҮьƢǔƜƱưŴȈȳȍȫƠƨแቩ‫܇‬ƴǑǔȈȳȍȫᩓ්Ǜย‫ܭ‬
NbAlAl O
SiO2

 Nb/Al-STJ¾ Nbҥ˳ǑǓǋ᠃ᆆภࡇƕɦƕǔ

~400nm¾ ǨȍȫǮȸǮȣȃȗǋ‫ݱ‬ƞƘƳǔƨǊǨȍȫǮȸЎᚐᏡƴΟǕǔ

Size : 10umg10um ~ 200umg200um¾ ዌጂᐏ˄ᡈƷแቩ‫܇‬Ʒ‫נ܍‬ᄩྙƕ‫ٻ‬ƖƘƳǔ
9 ဃ঺ᩓᒵૠ

=.
ȐȃǯȈȳȍȪȳǰјௐ

NbAl

[K]

9.23

1.12

Δ[meV]

1.550

0.172
4ಊ˯ภ‫֥ࠢف‬Ʒ᧏ႆ ಊ˯ภ‫ݰ֥ࠢف‬λ¾ STJƷ̮ӭƸƱƯǋ‫ݱ‬ƞƍƨǊŴ༏ƴǑǔȎǤǺǍ༏ǢȳǫȸƷƨǊƷᧈƍᣐዴƴǑǔ݃ဃܾ᣽ƕൢƴƳƬƯƘǔŵSTJƷႺᡈư̮ӭǛ‫ࠢف‬ƢǕƹǑƍ
@3K ಊ˯ภ‫֥ࠢف‬ǁƷᙲ൭
¾ ಊ˯ภưѣ˺ӧᏡϬҲᏡщ 250mW@300mK100μW¾ ̮ӭࠢ<10μsƷSTJƷ̮ӭǛ‫ࠢف‬ưƖǔƩƚƷࣖሉᡮࡇ¾ ϬϵೞƷϬҲᏡщǛɥ‫ׅ‬ǒƳƍ˯ෞᝲᩓщ

FD-SOI-MOSFETǛ̅ဇƠƨ‫֥ࠢف‬
5Fully Depleted Silicon-On-Insulator (FD-SOI) SOIƸᣠ҄ᐏɥƴFETǛ࢟঺¾ MOSFET᧓Ʒ݃ဃܾ᣽ƕƱƯǋ‫ݱ‬ƞƍ
¾ ෞᝲᩓщƕ‫ݱ‬ƞƍ FD-SOIƸȜȇǣȸǛᕓƘ࢟঺ƠƨSOI
¾ ූᢂ࠘јௐǛ৮С
ͤJAXA/ISASƴǑǓ
4KưƷѣ˺ƕᄩᛐƞǕƯƍƨŵ

ᆆѣࡇƷ᭗ƍᩓ‫܇‬ƕSiҾ‫܇‬ƴᘔᆳƠŴᩓ‫܇‬-ദ‫ݣ܉‬ƕဃ঺ƞǕǔŵμᆰʅ҄ƞǕƯƍƳƍƱദ‫܉‬ƕȜȇǣȸƴใǇƬƯƠǇƏ
6

[A]

[A]

ಊ˯ภưƷFD-SOI-MOSFETƷᩓ්ᩓ‫ן‬ཎࣱ
3K

3K

RoomRoom ᫬ԧ᪸؏ᩓ්Ʒɥଞ[V][V] ᧤͌ᩓ‫ן‬Ʒɥଞ ǵȖǹȬȃǷȧȫȉȪȸǯƷถ‫ݲ‬ಊ˯ภɦưᩓ්ᩓ‫ן‬ཎࣱƸ‫ٻ‬ƖƘ‫҄٭‬ƢǔƕŴMOSFETƱƠƯƷѣ˺ᐯ˳ƸӧᏡ7FD-SOIǛ̅ဇƠƨಊ˯ภ‫֥ࠢف‬Ʒ᧏ႆSOI-STJ4ǽȸǹ੗‫ࠢفע‬െ৽৴ƷˊǘǓƴMOSFETǛ̅ဇŵȕǣȸȉȐȃǯ‫ׅ‬ែǽȸǹ੗‫ע‬ƷȐǤǢǹǛ‫ܭ׍‬ƢǔŵȐȃȕǡ‫ׅ‬ែOutputǤȳȔȸȀȳǹǛɦƛǔŵ8

SOI-STJ4‫֥ࠢف‬ƴǑǔsinඬ‫ࠢف‬ᚾ᬴Biasย‫ܭ‬ኒ

Ϭϵೞ
4.7uF
ampǢȆȍȸǿ

Input
Function ᳸
generator

OutputCH2

CH1

 Input, OutputƸ ǢȆȍȸǿǛʼƠƯ‫˄ٳ‬ƚࠀѣ‫֥ࠢف‬Ǜ̅ဇƠŴ
Function generatorƔǒ̮ӭλщǪǷȭưඬ࢟Ǜย‫ܭ‬¾~1mVƷsinඬ

9SOI-STJ4ƷMASKȇǶǤȳ
‫ࠢف‬െȷBuffെɟ˳‫׹‬‫ࠢف‬െȷBuffെЎᩉ‫׹‬ǭȣȑǷǿȳǹȷ৽৴ 4.7μFƷǭȣȑǷǿȳǹƸȁȃȗǭȣȪǢƴȏȳȀ˄ƚƠȯǤȤȸȜȳȇǣȳǰư
SOI-STJ4‫֥ࠢف‬ƷInputƱ੗ዓ STJƷ̮ӭǛ‫ࠢف‬ƞƤǔ଺Ƹɟ˳‫׹‬ƷǢȳȗǛ̅ƍȯǤȤȸȜȳȇǣȳǰưSTJƱǢȳȗƷInputǛ੗ዓƠƯย‫ܭ‬SOI-STJ Meeting

2016/9/210SOI-STJ4‫֥ࠢف‬ƷМࢽ-ԗඬૠཎࣱ@300mKGain ‫֥ࠢف‬ƴҮьƢǔBiasƸ‫ܭ׍‬ƠŴԗඬૠǛ‫٭‬ƑƳƕǒМࢽƷ‫҄٭‬Ǜᙸƨŵ BuffെɦƷFETƷ
ǲȸȈᩓ‫ן‬ǛɥƛǔƜƱƴǑǓԗඬૠཎࣱƕǑƘƳǔŵ SOI-STJ4‫֥ࠢف‬ƸSTJƷ̮ӭǛ‫ࠢف‬ӧᏡ
¾ STJƷࣖሉᡮࡇ<10μs
Frequency
11SOI-STJ4ƴǑǔsinඬ‫ࠢف‬ᚾ᬴@300mK Input: 100Hz

50mV

1mV

¾ Ӓ᠃‫ࠢف‬ƕᄩᛐưƖǔ
2msec

2msec

¾ Gain~100
 Input: 1MHz
¾ ˮႻƸƣǕƯƍǔƕ

‫ࠢف‬ƷᄩᛐƕưƖǔ
1mV1mV¾ Gain~200.2μsec

10mV

20mV

0.2μsecܱᨥƴҮьƠƨBias
= 1.8V,= 1.1V,= 0.55V,== 0V,= −0.7V, = 1.5V,= 0.2V12ෞᝲᩓщ[uW]SOI-STJ4‫֥ࠢف‬Ʒෞᝲᩓщ@300mK230μW ܱᨥƷย‫ܭ‬ư̅ဇƠƨBias

ෞᝲᩓщ~236μWෞᝲᩓщ[uW]Bufferെെ

¾= 1.8V,= 1.1V,= −0.7V, = 0.55V,= 0.2V,== 0V,= 1.5V

Amp out[V]

6μW

‫ࠢف‬െ

300mKưƷϬҲᏡщƸኖ100 μW ƩƕŴϬҲᏡщƕኖ100mWƷ3KǹȆȸǸƴᚨፗƢǕƹբ᫆ƳƍV2[V]13ȑȫǹࣖሉᚾ᬴@300mK Nb/Al-STJƷલ˩̮ӭǛλщ ̮ӭᩃ᪦ൔǛย‫ܭ‬¾⁄=9: ̮ӭඬ᭗Ўࠋ

9: ᩃ᪦ඬ᭗Ўࠋ

9:Ʒʚʈ࠯‫૾࠯ר‬ఌ¾ ᆢЎ଺᧓Ƹ60μs⁄⁄= 12.09= 73.46

ಊ˯ภƴƓƍƯSOI-STJ4‫֥ࠢف‬Ƹ
14S/NǛӼɥƞƤƨŵǇƱǊ ȋȥȸȈȪȎߐْήǨȍȫǮȸǛย‫ܭ‬ƢǔƨǊƴŴಊ˯ภ‫֥ࠢف‬Ʒ᧏ႆǛᘍƬƯƍǔŵ SOI-STJ4‫֥ࠢف‬Ʒಊ˯ภưƷѣ˺Ǜᄩᛐ
¾ STJƷ̮ӭǛҗЎ‫ࠢف‬ưƖǔƩƚƷԗඬૠཎࣱǛᅆƠƨŵ
¾ ෞᝲᩓщƸྵ‫נ‬Ʒ300mKƴƓƚǔϬҲᏡщǛɥ‫ׅ‬ǔŵ

SOI-STJ4‫֥ࠢف‬Ǜ3KǹȆȸǸƴᚨፗƢǔƜƱưᚐൿӧᏡ
¾ ಊ˯ภƴƓƍƯSTJ̮ӭƷᛠǈЈƠƴஊјƳS/NƷӼɥƕᙸǒǕƨŵ

15

BACK UP16ȑȫǹࣖሉᚾ᬴@300mK Nb/Al-STJƷલ˩̮ӭǛλщ ̮ӭᩃ᪦ൔǛย‫ܭ‬¾⁄=9: ̮ӭඬ᭗Ўࠋ

9: ᩃ᪦ඬ᭗Ўࠋ

9:Ʒʚʈ࠯‫૾࠯ר‬ఌ
17ȐȃǯȈȳȍȪȳǰјௐ ȐȃǯȈȳȍȪȳǰƷˁኵǈ
9 Nb‫ޖ‬ƴήƕλ‫ݧ‬ƠŴǯȸȑȸ‫ݣ‬ƕNb

Al ዌጂᐏ AlNbѕឪƠƯแቩ‫܇‬Ǜဃ঺
9 ဃ঺ƞǕƨแቩ‫܇‬ƷƏƪ༾૾ƸƦƷǇǇȈȳȍȫ
9 ǋƏ༾૾ƸAl‫ޖ‬ưƷแቩ‫܇‬Ʒ‫נ܍‬ᄩྙǛ᭗Ǌǔ
9 ȈȳȍȫƠƨแቩ‫܇‬ƕAl‫ޖ‬Ʒǯȸȑȸ‫ݣ‬Ʒ༾лǕƱǯȸȑȸ‫ݣ‬Ǜ˺ǔ9 ƦƷᨥƴ˷Ƭƨᩓ‫܇‬ƕแቩ‫܇‬ƱƠƯAl‫ޖ‬ưѕឪ Nb/Al-STJưƸG~10STJƷᩓ්-ᩓ‫ן‬ǫȸȖ ήࣖሉǛᙸǔᨥƸ< 2Δ/ Ʒር‫׊‬ưᩓ‫ן‬ǛҮьƢǔ¾ Ȫȸǯᩓ්ƕȎǤǺƱƳǔBBǯȸȑȸ‫ݣ‬ƴǑǔǸȧǻȕǽȳǫȬȳȈƸᄬ‫ئ‬ƴǑǓ৮С
2Δ/Ȫȸǯᩓ්ήon/off (ᄬ‫ئ‬ƋǓ)SOI-STJ Meeting

2016/9/219Ȫȸǯᩓ්ǁƷᙲ൭ Nb/Al-STJư25meVƷ1ή‫܇‬Ǜย‫ܭ‬Ƣǔ
9 ဃ঺ᩓᒵૠᲴ=∗9 ȎǤǺƴǑǔᩓᒵૠᲴ
9ƷੵǒƗᲴ

9ƷੵǒƗᲴ

= 10 ×.

~250×==. × .

∗ .

Fano‫܇׆‬Ჴ ᳸0.2=9 STJƷࣖሉᡮࡇᲴ ~1 s ̮ӭƕ300HzưλƬƯƘǔƱᎋƑȪȸǯƴǑǔȎǤǺǛ1/10,౨Јјྙ97.5%Ʊᙲ൭9 4=−2+~250pAྵ‫נ‬Ŵ20μmᚌƷNb/Al-STJư~100pAǛᢋ঺Მ
20ಊ˯ภư᧤͌ᩓ‫ן‬ƕɥƕǔƕŴǲȸȈᩓ‫ן‬ǛСࣂƢǔƜƱưܴภƱӷಮƷȑȕǩȸȞȳǹǛࢽǒǕǔŵ

21

SOI-STJ4ưƷsinඬ‫ࠢف‬ᚾ᬴

INPUTᲴ ~1mVƷsinඬ
SOI-ampƴƸᢘ࢘ƳbiasǛҮь
INPUT,OUTPUTƸǪǷȭưย‫ܭ‬

OUTPUT22