Research Centerfor Integrated Quantum Electronics(RCIQE)

Hokkaido University

Overview
At RCIQE, we conduct research on eco-friendly, power-efficient, integrated quantum electronics, with focus on thefollowing topics:• Fabrication of semiconductor-based quantum nanostructures by atomically controlled crystal growth and low-energy
nanofabrication process. Characterization of their physical properties and application to efficient solar cells,
telecommunication, and magnetic devices.
• Formation and Characterization of magnetic semiconductors and application to ultra-low power IC and low-loss
ultrahigh-frequency devices.
• Development of high-performance wide-gap semiconductor devices based on the nano-scale control of heterointerface. Application to the next-generation high-efficiency power inverter systems.
• Design of ultra-low power and high-functional IC based on novel architecture for advanced information processing.

Organization

Director: Professor Junichi Motohisa
Research Area for
Advanced Electronic
Nanomaterials

Professor 1
Associate Professor 1

Research Area for
Quantum Intelligent
DevicesNature- & bio-inspired devices
Artificial Intelligence
Photo-electro-chemicalenergy conversion

Professor 1
Associate Professor 1

Nanoscale interface control
III-V compounds
Ferromagnetic/semiconductor
composites

Quantum integratedelectronics
Research Area for
Integrated Electron
Devices

Professor 1
Associate Professor 1

Semiconductor nanowires
Electron & optoelectronic
nanodevices
Functional electrondevices

Professor 1
Associate Professor 1

Research Area for
Functional
Communication
Devices and Circuits
Ultralow-power
communication devices
THz devices
Metamaterials

Staff
Visiting Professors
2
Research Institute Fellow 1
Technical Staff 1
Secretaries
1

Research Area for Advanced Electronic Nanomaterials
Professor: Fumitaro Ishikawa (Ph. D)
Based on the epitaxial growth of III-V
compound semiconductors, we explore
new electronic nanomaterials and heterostructure. We thus try to establish
materials of heterogeneous junction
nanowires, high-efficiency electronic andphotonic
energyconversion,newgeneration communication devices, andhigh-performance nano-spintronics.
! Exploration of novel electronic
nanomaterials with interface control! Pursue electronic devices with performance overcoming present limitation! Bottom-up ferromagnetic/
semiconductor nano composites andtheir application to magnetic devices

Associate Professor: Shinjiro Hara (Ph. D)

Self assembled nanostructures
showing a prospect for newgeneration devices

Novel bottom-up fabrication technologies
and magnetic device applications of hybridnanostructures between ferromagnet andsemiconductor
Non-magnetic
Electrode

MagneticNCs

Nonmagnetic
Interlayer

Non-magnetic
Electrode

Magnetic Sensors

Vertical Ferromagnet/
Semiconductor Hybrid
Nanowires

Research Area for Quantum Intelligent Devices
Professor: Seiya Kasai (Ph. D)

Associate Professor: Taketomo Sato (Ph. D)

We investigate nature- and bio-inspired
technologies for novel function material anddevices, including high-efficient solar cells,stochastic resonance devices, and amoebainspired artificial intelligence. We are aimingnatureandenvironment
friendly
semiconductor technologies for SDGs.

Electronic amoeba and its
application to autonomous walking
robot

Damage-free etching by photoelectrochemical process and formation ofhigh-density nanostructure(nm)
400! Bio-inspired electron devices exploiting
fluctuation and their applications! Amoeba-inspired non-von Neumann
computer! “Photo-”, “electro-”, “chemical-” energy
conversion and application to nitride
semiconductor processing0

low damage
etching15(µm)

AlGaN(µm)

15 0high-aspect pores

GaN

Research Area for Functional Communication Devices and Circuits
Professor: Masayuki Ikebe (Ph. D)
This research area covers systems, circuits
and devices for functional communication andsensors towards IoT society. We areinvestigating THz devices utilizing low-cost
CMOS technology, electronic properties ofInAlN/GaN heterostructures, ultra-low-power
CMOS circuits operating at subthresholdregions, and intelligent sensing technologies
with high sensibility and sensitivity.
! Novel materials and devices for THz waves! Sensor LSIs with micro-Watt power! Properties of InAlN/GaN heterostructures! Intelligent sensing/information processing

Associate Professor: Masamichi Akazawa (Ph. D)
THz image sensor with global shutter
based on the column-parallel ADC

InAlN/GaN heterostructure
field-effect transistor

Power cosumption per pixel : 4.5 µW
Frame rate: 400 fps

Research Area for Integrated Electron Devices
Professor: Junichi Motohisa (Ph. D)
We pursue the research on nanowire-based
integrated devices towards energy-efficientelectronics.
Semiconductor
nanowires
enable efficient control of carriers utilizing
unconventional
heterostructuresandmaterials. Based on the selective area
epitaxy and nanofabrication techniques, weaim at the application for high-performanceand energy-efficient nanodevices, and theirintegration.
! Integration of III-V semiconductor
nanowires using selective-area epitaxy! High performance and energy-efficient
nanodevices! Nanowire photonic devices

Associate Professor: Katsuhiro Tomioka (Ph. D)
Epitaxially grown nanowires

GaN-based nanowires utilizing
top-down technology
R800 nmHigh-performance & low-voltage
switching devices

GB

Full-color
nano LEDs

Nanowire-based light emitter &receiver for telecom bandQuantum
dot nanowireLEDAccesshttps://www.global.hokudai.ac.jp/about/access-maps/Research Center for Integrated Quantum Electronics (RCIQE),
Hokkaido University
Address: North 13, West 8, Sapporo 060-0813, JAPAN
Tel: +81-11-706-7171, Fax: +81-11-716-6004
HP: https://www.rciqe.hokudai.ac.jp/en/

Oct. 2022-