GLS85LE1xxxTIndustrial Temp NVMe NANDrive™ PX Series
Advance Factsheet 00.100
February 2024Features
 Industry Standard PCIe Host Interface– PCIe Gen3x4– PCI Express Base Revision 3.1 compliant– NVMe 1.4c compliant
 Performance– Sequential data read: Up to 2,380 MB/s
– Sequential data write: Up to 665 MB/s

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(measured using 128KB transfer size) Power Management– 3 power supplies (PWR_1/2/3 = 3.3V/1.8V/0.9V)– Autonomous power state transition (APST)– Active state power management (ASPM)– Supports L1.2 link state Power Consumption– Active mode (typical):
512GB: 2,755 mW
256GB: 2,650 mW
128GB: 1,866 mW
64GB: 1,390 mW– Idle/Slumber mode (typical): 108 mW/57 mW– Sleep mode (typical): 3.8 mW (512GB) Data Protection– End-to-end data path protection– AES-256 encryption engine– Hardware Crypto Erase (HCE)– Secure erase / Data sanitization– Host Controlled Thermal Management (HCTM)– Thermal throttling Supports up to 4 Namespaces Boot Partition
 Replay Protected Memory Block (RPMB)
 Host Memory Buffer (HMB)
 Volatile Write Cache (VWC)

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Field Firmware Update (FFU)
Supports SMART and TRIM Commands
Power Loss Notification
Command Queuing– 1 Admin queue and 8 IO queues supporting
up to 128 commands per queue
Dynamic and Static Wear-Leveling
Bad Block Management
Built-in ECC– Uses advanced LDPC bit error detection andcorrection optimized for 3D NAND
NAND Configuration– 3 bits per cell (TLC)
Endurance– P/E cycles: 5K, TBW (512GB): 1,350
Operating Temperature Range– Industrial: -40°C to 95°C (Tc)
BGA Package– 16.0 mm x 20.0 mm x 1.40 mm, 291-ball,0.8 mm ball pitch, LTE (LFBGA)– 16.0 mm x 20.0 mm x 1.85 mm, 291-ball,0.8 mm ball pitch, F1TE (FBGA)All Devices are RoHS Compliant

Notes: 1. User capacity: 1GB = 1 billion bytes
2. PCIe = Peripheral Component Interconnect Express
3. NVMe = Non-Volatile Memory Express
4. P/E cycles = NAND Program/Erase cycles
5. TBW = TeraBytes Written
6. Tc = Case surface temperature

Product Description
memory’s program/erase (P/E) cycles and minimizes
write amplification.

TheGLS85LE1xxxTIndustrialTemp
NVMe
NANDrive™ PX Series (referred to as “NVMeNANDrive” in this datasheet) are high-performance,high-reliability solid state drives (SSDs). They
combine an advanced Greenliant NAND controller
with 64, 128, 256 or 512 GBytes of NAND flash
memory in a multi-chip package.

NVMe NANDrive’s advanced NAND management
technology improves endurance, enhances data
security and helps prevent data corruption during
unexpected power failure events. This innovativetechnology combines robust NAND controller
hardware error correction capabilities with advanced
wear-leveling algorithms and bad block management
to improve data reliability and significantly extend thelife of the product. NVMe NANDrive is ideal for highreliability industrial and networking systems which
need low latency and fast performance.

The integrated NAND flash controller with built-inadvanced
NAND
management
firmwarecommunicates with the host through the standard
PCIe interface. It does not require any additional or
proprietary software such as the Flash File System(FFS) and Memory Technology Driver (MTD). The
firmware effectively optimizes the use of NAND flash
These specifications are subject to change without notice.
© 2024 Greenliant
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GLS85LE1xxxTIndustrial Temp NVMe NANDrive™ PX Series
Advance Factsheet 00.100
February 2024

1.0

GENERAL DESCRIPTION

Each NVMe NANDrive module integrates an NVMe PCIe NAND flash memory controller with discrete NAND flash
die in a BGA package. Refer to Figure 2-1 for the NVMe NANDrive block diagram.

1.1

Optimized NVMe NANDrive

1.2

The heart of NVMe NANDrive is the NVMe PCIeNAND flash memory controller, which translatesstandard PCIe signals into flash media data andcontrol signals. The following components contributeto NVMe NANDrive’s operation.

SMT Reflow Consideration

The NVMe NANDrive family utilizes standard NAND
flash for data storage. Because the high temperature
in a surface-mount reflow soldering process may alter
the content on NAND flash, it is recommended toprogram the NVMe NANDrive after the reflow process.

1.1.1 Microcontroller Unit (MCU)

1.3

The MCU translates PCIe / NVMe commands intodata and control signals required for flash mediaoperation.

Advanced NAND Management

NVMe NANDrive’s controller uses advanced wearleveling algorithms to substantially increase thelongevity of NAND flash media. Wear caused by data
writes is evenly distributed in all or select blocks in thedevice that prevents “hot spots” in locations that areprogrammed and erased extensively. This effective
wear-leveling technique results in optimized device
endurance, enhanced data retention and higher
reliability required by long-life applications.

1.1.2 Internal Direct Memory Access (DMA)
NVMe NANDrive uses internal DMA allowing instantdata transfer from/to buffer to/from flash media. This
implementation eliminates microcontroller overhead
associated with the traditional, firmware-based
approach, thereby increasing the data transfer rate.
1.1.3 Power Management Unit (PMU)

1.4

The PMU controls the power consumption of NVMe
NANDrive. The PMU dramatically reduces the power
consumption of NVMe NANDrive by putting the part ofthe circuitry that is not in operation into sleep mode.

Advanced Data Security

Advanced data security measures include end-to-end
data path protection, data sanitization (Secure Erase)
support and Hardware cryptographic erase. Secure
Erase is an effective method to quickly wipe all datafrom a PCIe-based SSD using the NVMe protocol(Format NVM). NVMe NANDrive’s controller supports
industrial standard AES-256 encryption to protect
sensitive user data. Hardware Cryptographic Erase
resets the cryptographic keys of the NVMe NANDrive
SSD, making all encrypted user data useless.

The Flash File System handles inadvertent powerinterrupts and has auto-recovery capability to ensure
NVMe NANDrive firmware integrity.
1.1.4 Embedded Flash File System
The embedded flash file system is an integral part of
NVMe NANDrive. It contains MCU firmware thatperforms the following tasks:
1. Translates host side signals into flash mediawrites and reads
2. Provides flash media wear leveling to spreadthe flash writes across all memory address
space to increase the longevity of flash media
3. Keeps track of data file structures
1.1.5 Error Checking and Correction (ECC)
The ECC technology uses advanced LDPC algorithms
to detect and correct errors, ensuring data integrityand extending the SSD lifespan.
1.1.6 Multi-tasking Interface
The multi-tasking interface enables concurrent Read,
Program and Erase operations to multiple NAND flashmedia.
These specifications are subject to change without notice.
© 2024 Greenliant
GLS FS0019 Rev. 01

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GLS85LE1xxxTIndustrial Temp NVMe NANDrive™ PX Series
Advance Factsheet 00.100
February 2024

2.0

FUNCTIONAL BLOCKS

Figure 2-1: NVMe NANDrive Block Diagram

These specifications are subject to change without notice.
© 2024 Greenliant
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GLS85LE1xxxTIndustrial Temp NVMe NANDrive™ PX Series
Advance Factsheet 00.100
February 2024

3.0

Product Ordering Information

GLS 85 LE 1 xxxT - T - I - xxTE - NDxxx
XX XX X XXXX - X - X - XXXX - XXXXX1)

Ordering CodeNDxxx = NANDrive Revision
Environmental Attribute
E = non-Pb solder (RoHS Compliant)
Package Modifier
T = 291-ball package
Package Type
L = LFBGA (max. package height 1.40mm)
F1 = FBGA (max. package height 1.85mm)
Operating Temperature
I = Industrial: -40°C to +95°C
NAND Configuration
T = 3 bits per cell
Product Generation
T = Generation
Capacity
064 = 64 GByte128 = 128 GByte
256 = 256 GByte
512 = 512 GByte
GByte Designator
1 = GByte
Interface
E = NVMeVoltage
L = 3.3V
Product Family
85 = NANDrive1)

Note that the top side marking on the package typically does not include ordering codes (e.g. NDxxx), unless it is a
special custom specification (C-SPEC) required by the end-customer to be marked on the device.

Valid Combinations
Valid product combinations are those that are in the mass production or will be in the mass production. Consult
your Greenliant sales representative to confirm availability of the valid combinations and to determine availabilityof new product combinations.
Table 3-1: NVMe NANDrive Product Valid Ordering Numbers
Capacity
Operating TemperaturePart Number

Package

64GB

Industrial (Tc = -40°C to 95°C)

GLS85LE1064T-T-I-LTE-ND300

LTE, 16x20x1.40mm

128GB

Industrial (Tc = -40°C to 95°C)

GLS85LE1128T-T-I-LTE-ND300

LTE, 16x20x1.40mm

256GB

Industrial (Tc = -40°C to 95°C)

GLS85LE1256T-T-I-LTE-ND300

LTE, 16x20x1.40mm

512GB

Industrial (Tc = -40°C to 95°C)

GLS85LE1512T-T-I-F1TE-ND300

F1TE, 16x20x1.85mm

These specifications are subject to change without notice.
© 2024 Greenliant
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GLS85LE1xxxTIndustrial Temp NVMe NANDrive™ PX Series
Advance Factsheet 00.100
February 2024

3.1

Package Diagrams

Note: All linear dimensions are in millimeters
Untoleranced dimensions are nominal target values
Coplanarity: 0.10mm (LTE), 0.15mm (F1TE)
Solder ball opening size is 0.5mm

Figure 3-2: NVMe NANDrive 291-Ball, Ball Grid Array (BGA)
These specifications are subject to change without notice.
© 2024 Greenliant
GLS FS0019 Rev. 01

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GLS85LE1xxxTIndustrial Temp NVMe NANDrive™ PX Series
Advance Factsheet 00.100
February 2024

Revision History
Number00.100

Description

Date

Initial Release as Advance Factsheet

February 29, 2024

© 2024 Greenliant. All rights reserved.
Greenliant and the Greenliant logo are registered trademarks, and NANDrive and EnduroSLC are trademarks ofGreenliant. All other trademarks and registered trademarks are the property of their respective owners.
Specifications are subject to change without notice. Memory sizes denote raw storage capacity; actual usablecapacity may be less.
Greenliant makes no warranty for the use of its products other than those expressly contained in the Greenliant
Terms and Conditions of Sale.
www.greenliant.com

These specifications are subject to change without notice.
© 2024 Greenliant
GLS FS0019 Rev. 01

62/29/2024
S71527-01