Datasheet

Automotive IPD 1ch Low-Side Switch
with Slew Rate Control and Output
Diagnostic Function
BV1LF080EFJ-C
Features











Key Specifications

AEC-Q100 Qualified (Note 1)
Built-in Dual TSD (Note 2)
Built-in Over Current Protection Function (OCP)
Built-in Thermal Shutdown Function (TSD)
Built-in Active Clamp Function
Built-in Diagnostic Function
Built-in Slew Rate Control Function
Directly Controllable from CMOS logic ICs
On-Resistance RDS(ON) = 80mΩ (Typ)(VDD = 5 V, IOUT = 1.0 A, Tj = 25 °C)
Monolithic Power Management IC with Control
Unit (CMOS) and Power MOSFET on a Single
Chip

On-state Resistance (Tj = 25 °C, Typ)Over Current Limitation Level(Tj = 25 °C, Typ)
Output Clamp Voltage (Min)Active Clamp Energy (Tj(START) = 25 °C)

PackageHTSOP-J8

80 mΩ
7.5 A
42 V
200 mJW (Typ) x D (Typ) x H (Max)
4.9 mm x 6.0 mm x 1.0 mm(Note 1) Grade 1(Note 2) This IC has thermal shutdown (Junction temperaturedetect) and ΔTj Protection (Power-MOS steep temperature risingdetect).

General Description
BV1LF080EFJ-C is a 1ch low-side switch forautomotive application. Output slew rate arevariably controlled by external resistance of the SR
terminal. It has built-in OCP, Dual TSD and Active
Clamp function. It is equipped with output
diagnostic function for TSD

Application
Driving Resistive, Inductive and Capacitive Loads

Block Diagram
VDD

STBY

SupplyUnit

OUT
Active
Clamp

IN
SR

GATE
Control

Dual TSD

ST

ST
Contorol

OCP

GND〇Product structure : Silicon integrated circuit
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Contents
Features ......................................................................................................................................................................................... 1
General Description ...................................................................................................................................................................... 1
Key Specifications ........................................................................................................................................................................ 1
Package ......................................................................................................................................................................................... 1
Application..................................................................................................................................................................................... 1
Block Diagram .............................................................................................................................................................................. 1
Contents ........................................................................................................................................................................................ 2
Pin Configuration .......................................................................................................................................................................... 3
Pin Description .............................................................................................................................................................................. 3
Definition ....................................................................................................................................................................................... 3
Absolute Maximum Ratings ........................................................................................................................................................ 4
Recommended Operating Condition .......................................................................................................................................... 4
Thermal Resistance...................................................................................................................................................................... 5
Electrical Characteristics ............................................................................................................................................................. 9
Typical Performance Curves ..................................................................................................................................................... 12
Measurement Circuit .................................................................................................................................................................. 19
Truth Table .................................................................................................................................................................................. 21
Timing Chart ............................................................................................................................................................................... 21
Function Description .................................................................................................................................................................. 23
I/O Equivalent Circuit ................................................................................................................................................................ 26
Operational Notes ...................................................................................................................................................................... 27
Ordering Information ................................................................................................................................................................. 31
Marking Diagram ........................................................................................................................................................................ 31
Physical Dimension and Packing Information......................................................................................................................... 32
Revision History .......................................................................................................................................................................... 33

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Pin Configuration
HTSOP-J8(TOP VIEW)
VDD

1

8

GND

STBY

2

7

GND

IN

3

6

GND

5

SR

OUT
EXP-PADST

4

Pin Description
Pin No.

Pin Name

Function

1

VDD

Power supply pin.

2

STBY

Input pin. Pull-down resistor is internally connected

3

IN

Input pin. Pull-down resistor is internally connected

4ST

Self-diagnostic output pin.

5SR

Slew rate control pin

6

GND

Ground pin.

7

GND

Ground pin.

8

GND

Ground pin.

EXP-PADOUT

Output pin. When output pin is shorted to power supply and the output current islimited to protect IC.

Definition

VBAT
VDD

VBAT
IDD

RST

VDD

RL, ZL

VDD
VSTBY
VIN

STBY

VSTBY

OUT
IOUT

IN
VIN

ST
IST
VST

VOUT

SR
GND

RSR
VSR

GND

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Absolute Maximum Ratings (Tj = 25 °C)
Parameters
Power Supply Voltage
Output Voltage

Input Voltage

SymbolRating

Unit

VDD-0.3 to +7

V

VOUT

-0.3 to +42

V

VSR-0.3 to VDD + 0.3

V

VIN-0.3 to +7

V

VSTBY

-0.3 to +7V

5 (internal limit) (Note 1)

Output Current

IOUT

A

Diagnostic Output Voltage

VST-0.3 to +7

V

Diagnostic Output Current

IST

10

mA

Active Clamp Energy (Single Pulse)
Tj(START) = 25 °C (Note 2)

EAS(25 °C)

200

Active Clamp Energy (Single Pulse)
Tj(START) = 150 °C (Note 2) (Note 3)

EAS(150 °C)

80

Operating Temperature Range

Tj-40 to +150

°C

Storage Temperature Range

Tstg-55 to +150

°C

Maximum Junction Temperature

Tjmax

150

°C

mJ

Caution 1:

Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between
pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures,such as adding a fuse, in case the IC is operated over the absolute maximum ratings.
Caution 2:
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result
in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal
resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction
temperature rating.
(Note 1) Internally limited by over current protection function.
(Note 2) Active clamp energy (Single Pulse), at the condition IOUT(START) = 1.0 A, VBAT = 16 V.

𝐸𝐴𝑆 =

1
𝑉𝐵𝐴𝑇
𝐿𝐼𝑂𝑈𝑇(𝑆𝑇𝐴𝑅𝑇) 2 × (1 −)2
𝑉𝐵𝐴𝑇 − 𝑉𝑂𝑈𝑇(𝐶𝐿)(Note 3) Not 100 % tested.

Recommended Operating Condition
Parameters

Symbol

Min

Typ

Max

Unit

Power Supply Voltage

VDD

3.5

5.0

6.5

V

Operating Temperature

Tj

-40

+25

+150

°C

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Thermal Resistance (Note 1)
Parameter

SymbolTyp

Unit

Condition

126.5

°C/W

1s

(Note 2)

37.8

°C/W

2s

(Note 3)

25.3

°C/W

2s2p

(Note 4)BV1LF080EFJ-C
Between Junction and Surroundings Temperature
Thermal Resistance

θJA(Note 1) The thermal impedance is based on JESD51-2A (Still-Air) standard. It is used the chip of BV1LF080EFJ-C(Note 2) JESD51-3 standard FR4 114.3 mm x 76.2 mm x 1.57 mm 1-layer (1s)(Top copper foil: ROHM recommended Footprint + wiring to measure, 2 oz. copper.)(Note 3) JESD51-5 standard FR4 114.3 mm x 76.2 mm x 1.60 mm 2-layers (2s)(Top copper foil: ROHM recommended Footprint + wiring to measure/
Copper foil area on the reverse side of PCB: 74.2 mm x 74.2 mm,copper (top & reverse side) 2 oz.)
(Note 4) JESD51-5/- 7 standard FR4 114.3 mm x 76.2 mm x 1.60 mm 4-layers (2s2p)(Top copper foil: ROHM recommended Footprint + wiring to measure/
2 inner layers and copper foil area on the reverse side of PCB: 74.2 mm x 74.2 mm,copper (top & reverse side/inner layers) 2 oz./1 oz.)

PCB Layout 1 Layer (1s)Footprint

100 mm 2

600 mm 2

1200 mm 2

Dimension

Value

Board Finish Thickness

1.57 mm ± 10 %Board Dimension

76.2 mm x 114.3 mm

Board Material

FR4

Copper Thickness (Top Layer)

0.070 mm (Cu:2 oz)

Copper Foil Area Dimension

Footprint / 100 mm 2 / 600 mm 2 / 1200 mm 2

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Thermal Resistance － continued

PCB Layout 2 Layers (2s)

Bottom Layer

Top Layer
Top Layer

Bottom Layer

via
Isolation Clearance Diameter : ≥ 0.6 mm

Cross Section
Dimension

Value

Board Finish Thickness

1.60 mm ± 10 %Board Dimension

76.2 mm x 114.3 mm

Board Material

FR4

Copper Thickness (Top/Bottom Layers)

0.070 mm (Cu +Plating)

Thermal Vias Separation/Diameter

1.2 mm / 0.3 mm

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Thermal Resistance － continued

PCB Layout 4 Layers (2s2p)

2nd / Bottom Layers

Top Layer

3rd Layer

Top Layer
2nd Layer

3rd Layer
Bottom Layer

via
Isolation Clearance Diameter : ≥ 0.6 mm

Cross Section
Dimension

Value

Board Finish Thickness

1.60 mm ± 10 %Board Dimension

76.2 mm x 114.3 mm

Board Material

FR4

Copper Thickness (Top/Bottom Layers)

0.070 mm (Cu +Plating)

Thermal Vias Separation/Diameter

1.2 mm / 0.3 mm

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Thermal Resistance － continuedTransient Thermal Resistance (Single Pulse)

Thermal Resistance (θJA vs. Copper Foil Area – (1s))

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Electrical Characteristics(Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VDD = 5 V）
Parameters

Symbol

Limit
Min

Typ

Max

Unit

Condition

Power Supply
VDD = 5 V, VSTBY = VIN = 0 V
RSR = 68 kΩ
VDD = VSTBY = VIN = 5 V
RSR = 68 kΩ

Standby Current

IVDD(S)

-

0

10

μA

Operating Current

IVDD

-

200

500

μA

Under Voltage Release Voltage

VUVLOR

-

2.5

3.0

V

Under Voltage Hysteresis Voltage

VUVLOHYS

-

0.2

0.4

V

High Level Input Voltage

VSTBY(H)

3.0

-

-

V

Low Level Input Voltage

VSTBY(L)

-

-

1.5

V

Input hysteresis Voltage

VSTBY(HYS)

-

0.2

-

V

High Level Input Current

ISTBY(H)

-

50

150

μA

VSTBY = 5 V

Low Level Input Current

ISTBY(L)

-1

0

+1

μA

VSTBY = 0 V

High Level Input Voltage

VINH

3.0

-

-

V

Low Level Input Voltage

VINL

-

-

1.5

V

Input hysteresis Voltage

VINHYS

-

0.2

-

V

High Level Input Current

IINH

-

50

150

μA

VIN = 5 V

Low Level Input Current

IINL

-1

0

+1

μA

VIN = 0 V

VDD Sweep up

Input (STBY)

Input (IN)www.rohm.com© 2019 ROHM Co., Ltd. All rights reserved.
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Electrical Characteristics – Continued(Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VDD = 5 V)
Parameters

Symbol

Limit

Unit

Condition

Min

Typ

Max

-

80

104

mΩ

-

150

180

mΩ

-

0.0

0.5

μA

-

1

20

μA

VDD = 5 V, IOUT = 1.0 A,
Tj = 25 °C
VDD = 5 V, IOUT = 1.0 A,
Tj = 150 °C
VSTBY = 0 V, VOUT = 18 V,
Tj = 25 °C
VSTBY = 0 V, VOUT = 18 V,
Tj = 150 °C
VIN = 0 V, IOUT = 1 mA

Power MOS Output

On-state Resistance

Leak Current

RDS(ON)IOUT(L)

Output Clamp Voltage

VOUT(CL)

42

48

52

V

Turn-ON Delay Time 1

tONDLY1

-

38

60

μs

Turn-OFF Delay Time 1

tOFFDLY1

-

95

145

μs

Fall Time 1

tF1

28

40

52

μs

Rise Time 1

tR1

28

40

52

μs

Slew Rate ON 1

SRON1

0.138

0.180

0.257

V/μs

Slew Rate OFF 1

SROFF1

0.138

0.180

0.257

V/μs

Turn-ON Delay Time 2tONDLY2

-

105

155

μs

Turn-OFF Delay Time 2

tOFFDLY2

-

266

410

μs

Fall Time 2

tF2

78

113

147

μs

Rise Time 2

tR2

78

113

147

μs

Slew Rate ON 2

SRON2

0.049

0.064

0.092

V/μs

Slew Rate OFF 2

SROFF2

0.049

0.064

0.092

V/μs

Turn-ON Delay Time 3

tONDLY3

-

230

335

μs

Turn-OFF Delay Time 3

tOFFDLY3

-

585

904

μs

Fall Time 3

tF3

174

249

324

μs

Rise Time 3

tR3

174

249

324

μs

Slew Rate ON 3

SRON3

0.022

0.029

0.041

V/μs

Slew Rate OFF 3

SROFF3

0.022

0.029

0.041

V/μs

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VDD = 5 V,
RL = 10 Ω,
RSR = 24 kΩ
VBAT = 12 V

VDD = 5 V,
RL = 10 Ω,
RSR = 68 kΩ
VBAT = 12 V

VDD = 5 V,
RL = 10 Ω,
RSR = 150 kΩ
VBAT = 12 V

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Electrical Characteristics – Continued(Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VDD = 5 V)
Parameters

Symbol

Limit

Unit

Condition

1.05

V

VDD = VSTBY = 5 V, RSR = 68 kΩ

-

0.5

V

IST = 1 mA

-

-

1

μA

VST = 5 V

tSTDET

-

-

65

µs

tSTREL

-

-

10

µs

IOUT(LIM)

5.0

7.5

10.0

A

TTSDD

150

175

-

°C

TTSDR

135

160

-

°C

TTSDHYS

-

15

-

°C

TDTJD

-

93

-

°C

TDTJR

-

43

-

°C

TDTJHYS

-

50

-

°C

Min

Typ

Max

VSR

0.95

1.00

ST Low Voltage (Note 1)

VST(L)-ST Leak Current

IST(L)ST Detection Delay Time (Note 1)
ST Release Delay Time (Note 1)

SR PinSR Output Voltage
Diagnostic Output

Protection Function
Over Current Limitation Level
Thermal Shutdown
Detected Temperature (Note 1)
Thermal Shutdown
Released Temperature (Note 1)
Thermal Shutdown
Hysteresis Temperature (Note 1)
ΔTj Protection Detected
Temperature (Note 1)
ΔTj Protection Released
Temperature (Note 1)
ΔTj Protection Hysteresis
Temperature (Note 1)

Tj = 25 °C(Note 1): Not 100 % tested.

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500

500

450

450

400

400

VDD Input Current: I VDD [μA]

VDD Input Current1: IVDD [μA]

Typical Performance Curves(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)

350
300
250
200

350
300
250
200
150

150

100

100
3.0

4.0

5.0

6.0

-40

7.0

40

80

120

150

Tj [°C]
Junction Temperature: Tj[℃]

VDD Voltage: VVDD [V]Figure 1. Operating Current vs VDD Input Voltage

Figure 2. Operating Current vs Junction Temperature

3.0

3.0

2.9
2.8
2.7

VUVLO(R)

2.9

VUVLO(D)2.8High Level Input Voltage/ Low Level Input Voltage (STBY): VSTBY [V]Under Voltage Detection (Release) Voltage: VUVLO[V]

0

2.6

2.5
2.4
2.3
2.2
2.1
2.0

1.9
1.8
1.7

VSTBY(H)VSTBY(L)

2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8

1.7
1.6

1.6

1.5

1.5

-40

0

40

80

120

150

Tj [°C]
Junction Temperature: Tj[℃]

-40

0

40

80

120

150

[°C]
Junction Temperature: Tj
Tj[℃]Figure 3. Under Voltage Detection (Release) Voltage

Figure 4. High Level Input Voltage / Low Level Input

vs Junction Temperature

Voltage (STBY) vs Junction Temperaturewww.rohm.com© 2019 ROHM Co., Ltd. All rights reserved.
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Typical Performance Curves - Continued(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)

3.0

150

High Level Input Voltage/ Low Level Input Voltage (IN): VIN[V]2.8

VIN(H)

140

VIN(L)

130

High Level Input Current/ Low Level Input Current (STBY): I STBY[μA]

2.9

2.7
2.6
2.5
2.4

2.3
2.2
2.1
2.0
1.9
1.8

1.7

ISTBY(H)ISTBY(L)

120
110
100

90
80
70

60
50
40

30
20
10

1.6

0

1.5
-40

0

40

80

120

-40

150

0

40

80

120

150

Junction Temperature: Tj[℃]
Tj [°C]Tj [°C]
Junction Temperature: Tj[℃]

Figure 5. High Level Input Voltage / Low Level Input

Figure 6. High Level Input Current / Low Level Input

Voltage (IN) vs Junction Temperature

Current (STBY) vs Junction Temperature
200

150

180

IIN(H)

130

IIN(L)

120

On-state Resistance: RDS(ON) [mΩ]High Level Input Current/ Low Level Input Current (IN): IIN[μA]

140

110
100
90

80
70
60
50

40
30
20

160
140
120
100
80

60
40

20

10

0
-40

0

40

80

120

150

Junction Temperature: Tj[℃]
Tj [°C]

0
3

4

5

6

7

VDD Input Voltage: VVDD [V]Figure 7. High Level Input Current / Low Level Input

Figure 8. On-state Resistance vs Input Voltage

Current (IN) vs Junction Temperaturewww.rohm.com© 2019 ROHM Co., Ltd. All rights reserved.
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Typical Performance Curves - Continued(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)

0.5

180

VDD = 3.5 V

160

VDD = 5 V

0.4

Leak Current: I OUT(L) [μA]

On-state Resistance: RDS(ON) [mΩ]

200

140
120
100
80
60
40

0.3

0.2

0.1

20

0
-40

0

40

80

120

0.0

150

0

2

4

[°C]
Junction Temperature: Tj
Tj[℃]

20

52

18

51

16

50

14
12
10
8
6

4

14

16

18

47
46
45
44

0

42
80

12

48

43

40

10

49

2

0

8

Figure 10. Leak Current vs OUT Voltage

Output Clamp Voltage: VOUT(CL) [V]

Leak Current : IOUT(L) [μA]

Figure 9. On-state Resistance vs Junction Temperature-40

6

Out Voltage: VOUT [V]

120

150

-40

0

40

80

120

150

Junction Temperature: Tj[℃]
Tj [°C]Tj [°C]
Junction Temperature: Tj[℃]

Figure 11. Leak Current vs Junction Temperature

Figure 12. Output Clamp Voltage vsJunction Temperaturewww.rohm.com© 2019 ROHM Co., Ltd. All rights reserved.
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160

160

140

140

Turn-ON Delay TIME2: t ONDLY2 [μs]Turn-ON Delay TIME2: t ONDLY2 [μs]Typical Performance Curves - Continued(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)

120

100

80

60

40

120

100

80

60

40
3

4

5

6

7

-40

0

40

80

120

Tj [°C]
Junction Temperature: Tj[℃]

VDD Input Voltage: VVDD [V]Figure 13. Turn-ON Delay Time2 vs VDD Input Voltage

Figure 14. Turn-ON Delay Time2 vs Junction(RSR = 68 kΩ)Temperature (RSR = 68 kΩ)

400

400

350

350

Turn-OFF Delay TIME2: t OFDLY2 [μs]Turn-OFF Delay TIME2: t OFFDLY2 [μs]

150

300
250
200
150

100

300
250
200
150
100
50

50

0

0
3

4

5

6

7

-40

0

40

80

120

VDD Input Voltage: VVDD [V]Figure 15. Turn-OFF Delay Time2 vs VDD Input

Figure 16. Turn-OFF Delay Time2 vs Junction

Voltage (RSR = 68 kΩ)Temperature (RSR = 68 kΩ)

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150

Junction Temperature: Tj[℃]
Tj [°C]

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150

150

140

140

130

130

Fall Time2: t F2 [μs]Fall Time2: t F2 [μs]Typical Performance Curves - Continued(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)

120

120

110

110

100

100
90

90

80

80
70

70
3

4

5

6

-40

7

0

40

80

120

150

Tj [°C]
Junction Temperature: Tj[℃]

VDD Input Voltage: VVDD [V]Figure 18. Output Fall Time2 vs Junction Temperature(RSR = 68 kΩ)(RSR = 68 kΩ)

150

150

140

140

130

130

Rise Time2: t R2 [μs]Rise Time2: t R2 [μs]Figure 17. Output Fall Time2 vs VDD Input Voltage

120

120

110

110

100

100
90

90

80

80
70

70
3

4

5

6

7

-40

0

40

80

120

150

Tj [°C]
Junction Temperature: Tj[℃]

VDD Input Voltage: VVDD [V]Figure 19. Rise Time2 vs VDD Input Voltage

Figure 20. Rise Time2 vs Junction Temperature(RSR = 68 kΩ)(RSR = 68 kΩ)

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0.10

0.10

0.09

0.09

Slew Rate ON2: SRON2 [V/μs]

Slew Rate ON2: SRON2 [V/μs]

Typical Performance Curves - Continued(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)

0.08

0.07

0.06

0.05

0.08

0.07

0.06

0.05

0.04

0.04

3

4

5

6

-40

7

0

VDD Input Voltage: VVDD [V]

80

120

150

Figure 21. Slew Rate ON2 vs VDD Input Voltage

Figure 22. Slew Rate ON2 vs Junction Temperature(RSR = 68 kΩ)(RSR = 68 kΩ)

0.10

0.10

0.09

0.09

Slew Rate OFF2: SROFF2 [V/μs]

Slew Rate OFF2: SROFF2 [V/μs]

40

Tj [°C]
Junction Temperature: Tj[℃]

0.08

0.07

0.06

0.05

0.08

0.07

0.06

0.05

0.04

0.04

3

4

5

6

7

-40

0

40

80

120

150

Junction Temperature: Tj[℃]
Tj [°C]VDD Input Voltage: VVDD [V]Figure 23. Slew Rate OFF2 vs VDD Input Voltage

Figure 24. Slew Rate OFF2 vs Junction Temperature(RSR = 68 kΩ)(RSR = 68 kΩ)

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Typical Performance Curves - Continued(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)

10000

Active Clamp Energy (Single Pulse): EAS[mJ]

Over Current Limit Value: IOUT(LIM) [A]109

Tj(START) = 25 ℃
Tj(START) = 150 ℃

1000

8

7

6

5
-40

0

40

80

120

100

10

150

Tj [°C]
Junction Temperature: Tj[℃]

0.5

1.0

1.5

2.0

2.5

Figure 25. Over Current Limit Value

Figure 26. Active Clamp Energy (Single Pulse)

vs Junction Temperature

vs Output Current (Start)

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3.0

Output Current (Start): I OUT(START)[A]

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Measurement Circuit

V DD
V DD
VDD
IN

VDD

R L = 10 Ω

OUT

VIN
= 5V

ST

Measurement Circuit for Figure 3

VDD
= 5V

OUT

VDD

R L = 10 ΩIN

V BAT = 12 V

SR

ST

VBAT = 12 V

SR

GND

Measurement Circuit for Figure 5

VDD
=5V

OUT

VDD

R L = 10 ΩIN

V BAT = 12 V
VIN
= 0V
or 5 V

STBY

SR

ST
GND

VDD
IN

R SR=
68 kΩ

RL = 10 Ω

STBYMeasurement Circuit for Figure 4

V STBY= 0V
or 5 V

OUT

V IN

STBY

V DD
= 5V

ST
GND

VDD
IN

RSR
= 68 kΩ

VBAT = 12 V

SR

GND

Measurement Circuit for Figure 1 and Figure 2

V STBYR L = 10 Ω

STBY

SR

V DD
= 5V

OUT

VIN
= 5V

STBY

R SR=
68 kΩ

IN

V BAT = 12 V

ST
R SR =68k Ω

GND

Measurement Circuit for Figure 6

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TSZ22111 • 15 • 001

OUT

RL = 10 Ω
VBAT = 12 V

STBY

SR

ST
GND

Measurement Circuit for Figure 7

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Measurement Circuit – Continued

VDD

VDD
= 5V

VDD
IN

VDD
IN

OUT

OUT

VOUT = 18 V

I OUT = 1.0 A
R DS(ON)= VOUT/I OUT

STBY

SR

STBY

SR

ST

ST
GND

GND

Measurement Circuit for Figure 8 and Figure 9

Measurement Circuit for Figure 10 and Figure 11

V IN = 0 V to 5 V or 5 V to 0 V

VDD = 5 V

VDD
= 5V

VDD
IN

VDD

OUT

IN

I OUT = 1 mA

OUT

MonitorSTBY

RL = 10 Ω
Monitor

VBAT = 12 V

STBY

SR

ST
GND

RSR

Measurement Circuit for Figure 12

SR

ST
GND

Measurement Circuit for
Figure 13, Figure 14, Figure 15, Figure 16, Figure 17,
Figure 18, Figure 19, Figure 20, Figure 21, Figure 22,
Figure 23 and Figure 24

VDD
= 5V
VDD
IN

OUT
VOUT ＝ 12 V

STBY

SR

ST
GND

Measurement Circuit for Figure 25

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Truth TableOUT Output and Diagnostic Output Function
Performs diagnostic test to check for any abnormal conditions and output to the ST pin. Once Thermal
Shutdown is detected, the ST pin is latched Low. ST pin Low latch is released by setting the STBY pin to
Low or set VDD voltage to “Low Voltage Detection (VUVLO-VUVLOHYS)”STBY Pin
Voltage

Power
Supply(VDD)
Under
Voltage
Detection

IN PinVoltage

TSD

ΔTj

OCP

Low

*

*

*

*

High

Detected

*

*

High

Undetected

Low

High

Undetected

High

Output StateOUT Pin

ST Pin

*

OFF

High

*

*

OFF

High

*

*

*

OFF

High

High

Detected

*

*

OFF

Low

Undetected

High

Undetected

Detected

*

OFF

High

High

Undetected

High

Undetected

Undetected

No Limit

ON

High

High

Undetected

High

Undetected

Undetected

LimitedCurrent
Limitation

High

Timing Chart
VDD [V]VDD and VSTBY can be input simultaneously

VDD VUVLORVUVLOHYSVUVLODt

0
VSTBY [V]VSTBY

VSTBY(H)VSTBY(L)t

0
VIN [V]tSETUP ≥ 100 [µs]VIN

VIN(H)
VIN(L)

0t

VOUT [V]tONDLY [µs]tOFFDLY [µs]≈ VBAT

80 %
VOUT
0

≈0V

20 %
tF [µs]( SR ON [V/µs ])ttR [µs]( SROFF [V/µs ])Figure 27. Definition of Turn-ON TIME, Turn-OFF TIME, Fall TIME (Slew Rate ON), and Rise TIME (Slew Rate OFF)www.rohm.com© 2019 ROHM Co., Ltd. All rights reserved.
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Timing Chart ― Continued

VIN [V]
VIN(H)
VIN

VIN(L)

0t

VOUT [V]VOUT(CL)

VOUT

VBAT
IOUT x RDS(ON)0t

IOUT [A]VBATZL + RDS(ON)

IOUT

t

0
Figure 28. Inductive Load Operationwww.rohm.com© 2019 ROHM Co., Ltd. All rights reserved.
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Function Description■

Over Current Protection Function
This IC built-in over current protection function. Following is shown that the timing chart of over current
protection function.
Occurrence of Over Current
Dissolution of Over Current
①

②

V DD

V STBY

V IN

V OUT

IOUT(LIM)

IOUT

Normal Current

V ST

Figure 29. Timing Chart of OCP Function① When an overcurrent occurs, IOUT is controlled by the overcurrent limit level (IOUT(LIM)) and VOUT rises.
IOUT(LIM) is 7.5 A (Typ). The VST does not change at this time.
② When the overcurrent disappears, the over current limit is released.

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Function Description – Continued■

Dual TSD Function
This IC has a built-in TSD function and ΔTj protection function. Following is shown that the timing chart ofDual TSD function.
① ②

① ②

① ②

③ ④③ ④ ③ ④ ③

⑤

V DD

V STBY

V IN

V OUT

TTSDD
TTSDR
TPOWER-MO S
Tj
TDTJD

T DTJRTAMB

t STDETt STRELV ST

ΔTj Protection

Thermal Shutdown

Figure 30. Timing Chart of Dual TSD Function

①

②
③
④
⑤

The temperature of Power MOS FET part and the control part in his IC is each T POWER-MOS, TAMB. When thetemperature difference becomes 93 °C (Typ) or more, the output turns OFF. This temperature defines as ΔTj
Protection Detected Temperature (TDTJD). At This time, the VST does not change.
When the temperature difference of TPOWER-MOS and TAMB becomes 43 °C (Typ) or less, the output turns
automatically ON. This temperature defines as ΔTj Protection Released Temperature (TDTJR).
The output is turned off when the temperature of the IC reaches Thermal Shutdown Detected Temperature(TTSDD) = 175 °C (Typ) or more. At this time, the VST latches Low.
The output returns to its normal state when the temperature of the IC becomes Thermal Shutdown Released
Temperature (TTSDR) = 160 °C (Typ) or less. VST keeps latching Low.
the VST become High after tSTREL when the VSTBY become Low.

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Function Description ― Continued

Slew rate control function
This IC can variably adjust the rise time (Slew Rate ON) and fall time (Slew Rate OFF) of OUT output voltage
by setting the SR pin external resistor (RSR).
The approximate expression when VBAT = 12V is as follows.
(1.636 × 𝑅𝑆𝑅 )⁄Rise time: 𝑡𝑅 =1000 + 3.73 [µs](1.636 × 𝑅𝑆𝑅 )⁄Fall time: 𝑡𝐹 =1000 + 3.73 [µs]
(𝑉𝐵𝐴𝑇 × 0.8 − 𝑉𝐵𝐴𝑇 × 0.2)⁄
Slew Rate ON: 𝑆𝑅𝑂𝑁 =𝑡 𝐹 [V / µs](𝑉𝐵𝐴𝑇 × 0.8 − 𝑉𝐵𝐴𝑇 × 0.2)⁄
Slew Rate OFF: 𝑆𝑅𝑂𝐹𝐹 =𝑡 𝑅 [V / µs]
RSR recommended range: 24 kΩ to 150 kΩ
(Calculation example)(1.636 × 150𝑘) ⁄Rise time 3: 𝑡𝑅3 =1000 + 3.73 = 249 [µs](12 × 0.8 − 12 × 0.2)⁄
Slew Rate OFF 3: 𝑆𝑅𝑂𝐹𝐹3 =249 = 0.029 [V / µs]
400
VBAT = 12V
350

Rise Time: tR [μs]Fall Time: tF [μs]

300
250
200
Max

150

Typ
100

Min

50
0
0

50

100

150

SR Resistor: RSR [kΩ]

Figure 31. Output rise (fall) time vs The SR pin resistancewww.rohm.com© 2019 ROHM Co., Ltd. All rights reserved.
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I/O Equivalent Circuit
VDD

ST

100 Ω

VDD

ST
100 Ω

IN

SR

IN
39 kΩ

SR

46 kΩ
15 kΩ

STBY

OUT

STBY
41 kΩ

OUT

47 k Ω
12 k Ω

Resistor values in the figure are typical values.

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Operational Notes
1.

Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse
polarity when connecting the power supply, such as mounting an external diode between the power supply
and the IC’s power supply pins.

2.

Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to
ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value
when using electrolytic capacitors.

3.

Ground Voltage
Except for pins the output and the input of which were designed to go below ground, ensure that no pins
are at a voltage below that of the ground pin at any time, even during transient condition.

4.

Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed
separately but connected to a single ground at the reference point of the application board to avoid
fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces ofexternal components do not cause variations on the ground voltage. The ground lines must be as short andthick as possible to reduce line impedance.

5.

Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended
operating conditions. The characteristic values are guaranteed only under the conditions of each item
specified by the electrical characteristics.

6.

Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.

7.

Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin
may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s
power supply should always be turned off completely before connecting or removing it from the test setup
during the inspection process. To prevent damage from static discharge, ground the IC during assembly
and use similar precautions during transport and storage.

8.

Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting
may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power
supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets(in very humid environment) and unintentional solder bridge deposited in between pins during assembly toname a few.

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Operational Notes ― Continued
9. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance withtemperature and the decrease in nominal capacitance due to DC bias and others.
10. Thermal Shutdown Function (TSD)
This IC has a built-in thermal shutdown function that prevents heat damage to the IC. Normal operation
should always be within the IC’s maximum junction temperature rating. If however the rating is exceeded
for a continued period, the junction temperature (Tj) will rise which will activate the TSD function that willturn OFF power output pins. When the Tj falls below the TSD threshold, the circuits are automatically
restored to normal operation.
Note that the TSD function operates in a situation that exceeds the absolute maximum ratings and therefore,
under no circumstances, should the TSD function be used in a set design or for any purpose other thanprotecting the IC from heat damage.
11. Over Current Protection Function (OCP)
This IC incorporates an integrated overcurrent protection function that is activated when the load is shorted.
This protection function is effective in preventing damage due to sudden and unexpected incidents. However,the IC should not be used in applications characterized by continuous operation or transitioning of theprotection function.
12. Active Clamp Operation
The IC integrates the active clamp function to internally absorb the reverse energy EL which is generated
when the inductive load is turned off. When the active clamp operates, the thermal shutdown function does
not work. Decide a load so that the reverse energy EL is active clamp tolerance EAS (refer to Figure 26.
Active Clamp Energy (Single Pulse) vs Output Current (Start)) or under when inductive load is used.
13. Negative Current of Output
When the OUT pin (DRAIN) becomes lower than the GND pin (SOURCE) voltage, a current flow from power
supply pin (VDD) and the input pins (the STBY pin and the IN pin) to the OUT pin through a parasitic
transistor. When the power supply pin is high, as shown in Figure 32, when the input pins are high, asshown in Figure 33, a current flow from the power supply pin and the input pins of connected parts (LDO,
MCU, etc.) to the OUT pin. When the power supply pin is low, as shown in Figure 34, and when the input
pins are low, as shown in Figure 35, a current flow from the power supply pin and the GND of parts (LDO,
MCU, etc.) that connected to the input pins to the OUT pin.
Therefore, set the OUT pin (DRAIN) is -0.3 V or higher. When the OUT pin becomes lower than -0.3 V, add
a restriction resistance 82 Ω or higher to the VDD pin, a restriction resistance 1k Ω or higher to the STBY
pin and a restriction resistance 1k Ω or higher to the IN pin. However, set the value of restriction resistancein consideration of the voltage descent caused by power supply pin and input pins currents.

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13. Negative Current of Output ― Continued
LDO, and so on

GND(SOURCE)
Restriction
resistancePower supply pin
N+

N+

N+

P+

N+

P-

P-

Parasitic Element

N-epi

N+

N+sub

OUT
(DRAIN)

Figure 32. Negative Current Path (when the power supply pin is High)MCU, and so on

GND(SOURCE)
Restriction
resistance

Input pin
N+

N+

N+

P+

N+

P-

P-

Parasitic Element

N-epi

N+

N+sub

OUT
(DRAIN)

Figure 33. Negative Current Path (when the input pins are High)LDO, and so on

GND(SOURCE)
Restriction
resistancePower supply pin
N+

N+

N+

P-

N+

P+

N+

P-

Parasitic Element

N-epi
N+sub

OUT
(DRAIN)

Figure 34. Negative Current Path (when the power supply pin is Low)
MCU, and so on

GND(SOURCE)
Restriction
resistance

Input pin
N+

N+

N+

P+

N+

P-

P-

Parasitic Element

N-epi

N+

N+sub

OUT
(DRAIN)

Figure 35. Negative Current Path (when the input pins are Low)

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Operational Notes ― Continued
14. Power Supply Steep Fluctuation
If the voltage of the power supply pin (VDD) falls sharply, the output pin (OUT) may temporarily turn off asshown in Figure 36. If the power supply pin is expected to fall sharply, take measures such as inserting acapacitor between the power supply pin and the ground pin so that it falls within the recommended usage
range shown in Figure 37.

2.5

VDD [V]

2.0
Deprecated use range

VDD(FALL )VDD
0VDD(FALL) [V]tVDD(FALL)t

VOUT[V]

0.5

VOUT
≈0V

1.0
Recommended use range≈ VBAT

0

1.5

t

0.0
0

10

20

30

t VDD(FALL) [μs]Figure 36. Output OFF Operation when Power
Supply Fluctuates Sharply

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Figure 37. Recommended Use Range

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BV1LF080EFJ-C
Ordering Information

B

V

1

L

F

0

8

0

E

F

J

Package
EFJ: HTSOP-J8

C

E

2

Product Grade
C: For Automotive
Packaging and Forming Specification
E2: Embossed Tape and Reel

Marking Diagram
HTSOP-J8 (TOP VIEW)
Part Number Marking

V 1 L F 8 0

LOT Number

Pin 1 Markwww.rohm.com© 2019 ROHM Co., Ltd. All rights reserved.
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Physical Dimension and Packing Information

Package Namewww.rohm.com© 2019 ROHM Co., Ltd. All rights reserved.
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HTSOP-J8

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Revision History
Date

Revision

Changes

24.Jun.2020

001

New release

28.Oct.2020

002

Page 25. Updated slew rate control function formula.

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Notice
Precaution on using ROHM Products
1.

If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ

2.

ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, whicha failure or malfunction of our Products may cause. The following are examples of safety measures:[a] Installation of protection circuits or other protective devices to improve system safety[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3.

Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from theuse of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items[f] Sealing or coating our Products with resin or other coating materials[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering[h] Use of the Products in places subject to dew condensation

4.

The Products are not subject to radiation-proof design.

5.

Please verify and confirm characteristics of the final or mounted products in using the Products.

6.

In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affectproduct performance and reliability.

7.

De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.

8.

Confirm that operation temperature is within the specified range described in the product specification.

9.

ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined inthis document.

Precaution for Mounting / Circuit board design
1.

When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect productperformance and reliability.

2.

In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PAA-E© 2015 ROHM Co., Ltd. All rights reserved.

Rev.004

Precautions Regarding Application Examples and External Circuits
1.

If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of thecharacteristics of the Products and external components, including transient characteristics, as well as static
characteristics.

2.

You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not beapplied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation
1.

Product performance and soldered connections may deteriorate if the Products are stored in the places where:[a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation[d] the Products are exposed to high Electrostatic

2.

Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time isexceeding the recommended storage time period.

3.

Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.

4.

Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products ofwhich storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights
1.

All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.

2.

ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).

3.

No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution
1.

This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2.

The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior writtenconsent of ROHM.

3.

In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.

4.

The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.

Notice-PAA-E© 2015 ROHM Co., Ltd. All rights reserved.

Rev.004

Datasheet
General Precaution

1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any priornotice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.

3.

The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of orconcerning such information.

Notice – WE

© 2015 ROHM Co., Ltd. All rights reserved.

Rev.001