4-1

ᖱႎ䊂䊋䉟䉴Ꮏቇ․⺰
╙䋴࿁
CMOSၮᧄ․ᕈ䈫䉲䊚䊠䊧䊷䉲䊢䊮ᛛⴚ

4-2

nMOSFET ⋥ᵹ․ᕈ㪈㪅㪜㪄㪇㪋

VG

VD

㪐㪅㪜㪄㪇㪌

W

Ln㪏㪅㪜㪄㪇㪌

I㪠㪛㩷㪲㪘㪴
D [A]

VS

n

㪎㪅㪜㪄㪇㪌

VDS = 3 [V]㪍㪅㪜㪄㪇㪌

0.5 [V]㪌㪅㪜㪄㪇㪌
㪋㪅㪜㪄㪇㪌
㪊㪅㪜㪄㪇㪌p䉰䊑䉴䊧䉾䉲䊢䊦䊄㗔ၞ

㪉㪅㪜㪄㪇㪌
㪈㪅㪜㪄㪇㪌
㪇㪅㪜㪂㪇㪇

VB

㪇㪈㪅㪜㪄㪇㪊
㪐㪅㪜㪄㪇㪋
㪏㪅㪜㪄㪇㪋

ID㪠㪛㩷㪲㪘㪴
[A]

㪎㪅㪜㪄㪇㪋
㪍㪅㪜㪄㪇㪋
㪌㪅㪜㪄㪇㪋
㪋㪅㪜㪄㪇㪋
㪊㪅㪜㪄㪇㪋
㪉㪅㪜㪄㪇㪋
㪈㪅㪜㪄㪇㪋
㪇㪅㪜㪂㪇㪇㪇㪅㪌㪈㪈㪅㪌㪭㪛㪪㩷㪲㪭㪴

VDS [V]

㪉

㪉㪅㪌

㪊

㪇㪅㪉

㪇㪅㪋

㪇㪅㪍
㪭㪞㪪㩷㪲㪭㪴

㪇㪅㪏

㪇㪅㪍

㪇㪅㪏

㪈

㪈㪅㪉

㪈

㪈㪅㪉

VGS [V]㪈㪅㪜㪄㪇㪋
㪈㪅㪜㪄㪇㪌
㪈㪅㪜㪄㪇㪍

I㪠㪛㩷㪲㪘㪴
D [A]

VGS [V]
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
㪇

VT

㪈㪅㪜㪄㪇㪎
㪈㪅㪜㪄㪇㪏
㪈㪅㪜㪄㪇㪐
㪈㪅㪜㪄㪈㪇
㪈㪅㪜㪄㪈㪈
㪈㪅㪜㪄㪈㪉
㪇㪇㪅㪉㪇㪅㪋VGS [V]㪭㪞㪪㩷㪲㪭㪴

4-3

nMOSFET ⋥ᵹ․ᕈ
VS

VG
L

VD

VGS  VT ! VDS

✢ᒻ㗔ၞ

W

ID
n

n
p
VB

ℂᗐ䊃䊤䊮䉳䉴䉺䊶䊝䊂䊦

ID

E

VFB

1

º

VDS ! VGS  VT ! 0

㘻๺㗔ၞ

VT

ੑᰴ䈱ലᨐ

ª

E « VGS  VT VDS  VDS2 »
2
¬
¼

E
2

VGS  VTW P nCoxL

VFB  2IF 

2

1  O VDS

2qN AH S 2IF  VBS

CoxEC  EFi) M  F  IF q

4-4

pMOSFET ⋥ᵹ․ᕈ
VS

VG
L

p

VD

✢ᒻ㗔ၞ

W

1
ª
º
 E « VGS  VT VDS  VDS 2 »
2
¬
¼

ID
p

n

㘻๺㗔ၞ

ID

VB

VGS  VT  VDS

VDS  VGS  VT  0


E2

VGS  VT2

1  OVDSℂᗐ䊃䊤䊮䉳䉴䉺䊶䊝䊂䊦E㔚࿶䈫㔚ᵹ䈱╓ภ䈏ᄌ䉒䉎ㅢᏱ䇮㑣୯ VT 䈲⽶

W P p CoxL

2qN DH S 2IF  VBS

VT

VFB  2IF 

VFB) M  F  IF 

Cox
EC  EFiqታ㓙䈱䊃䊤䊮䉳䉴䉺䊶䊌䊤䊜䊷䉺䈲䈬䈱⒟ᐲ䋿
VDEC 䊨䊷䊛0.35 Pm 䊒䊨䉶䉴L = 0.4 Pm W = 2 Pm
nMOS

pMOS

VDS = 3V VGS = 0.7V

VDS = -3V VGS = -0.7V

ID

20 PA

12 PA

VT

0.5 V

-0.65 V

VDsat

0.15 V-0.05V

E

1.3 x 10-3 AV-2

4.3 x 10-4 AV-2

gm

1.8 x 10-4 S

2 x 10-5 Sro

6 x 105 :2.5 x 106 :ℂᗐ䊃䊤䊮䉳䉴䉺䊶䊝䊂䊦䈫䈱䈝䉏䈲⚿᭴ᄢ䈐䈇

4-5

4-6

䊃䊤䊮䉳䉴䉺䈱․ᕈ䈲ⶄ㔀log [ ID ]
䉸䊷䉴ᛶ᛫

Gate

ነ↢⚛ሶ

RG
DIBL : drain-induced
barrier lowering

Source

RS

CGS

CSB

VGS
䊥䊷䉪㔚ᵹ
SHRౣ⚿ว㔚ᵹ䋨ᥧ㔚ᵹ䋩
GIDL : gate-induced drain leakage䂾 䉲䊢䊷䊃䉼䊞䊮䊈䊦ലᨐ䂾 㜞㔚⇇ലᨐ
䉟䊮䊌䉪䊃䊶䉟䉥䊮ൻ⒖േᐲഠൻ
䂾 䉭䊷䊃⭯⤑ൻ䈮઻䈉⃻⽎䊃䊮䊈䊦㔚ᵹ䉭䊷䊃ⓨਲൻ

CGD
RD
CGB
Body

CDB

Drain

䉲䊚䊠䊧䊷䉲䊢䊮ᛛⴚ

4-7

⸘▚ᯏታ㛎

ౝㇱ㔚૏╬䇮᷹ቯ࿎㔍䈭‛ℂ㊂䉕⺞䈼䉎䈖䈫䈮䉋䉍⃻⽎䉕ℂ⸃ᣂ䈚䈇⚛ሶ䈱ᬌ⸛⒳䇱䈱ലᨐ䉕ข䉍౉䉏ᦨㆡൻ䈚䈢․ᕈ䈱੍᷹⠨䈋㑆㆑䈇䈱㒐ᱛ䉲䊚䊠䊧䊷䉲䊢䊮䈮䉋䉍ᕁ䉒䈯⠨䈋ᔓ䉏䉕⊒⷗⹜૞䈮ᤨ㑆䊶㊄䈏䈎䈎䉎䉲䊚䊠䊧䊷䉲䊢䊮䈮䉋䉍᧦ઙ䉕⛉䉍ㄟ䉃䈖䈫䈏ᔅⷐ䉲䊚䊠䊧䊷䉲䊢䊮䈮㗬䉍䈜䈑䉎䈱䉅ෂ㒾䉲䊚䊠䊧䊷䉲䊢䊮䈱೨䈮ℂᗐൻ䈘䉏䈢䋨න⚐ൻ䈚䈢䋩䊝䊂䊦䈪චಽᬌ⸛䈚䈩䈍䈎䈭䈇䈫ᤨ㑆䈱ᶉ⾌䈮㒱䉎

LSI 䈮䈍䈔䉎䉲䊚䊠䊧䊷䉲䊢䊮

4-8䉲䊚䊠䊧䊷䉺䈱଀䊒䊨䉶䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮

SUPREM䊂䊋䉟䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮PISCESDAMOCLES

Drift-Diffusion 䊝䊂䊦
Boltzmann ᣇ⒟ᑼ

CIDER

Mixed-mode࿁〝䉲䊚䊠䊧䊷䉲䊢䊮SPICE

UNIX 䈱ၮᧄ䉮䊙䊮䊄䈾䈫䉖䈬䈱䉲䊚䊠䊧䊷䉺䈲UNIX ਄䈪േ૞䊶੕឵ᕈ䊶ା㗬ᕈ䊶⥄↱ᐲ䈏ᄢ䈐䈇䋨䉸䊐䊃䈲䉸䊷䉴䊶䊔䊷䉴䋩䊶⼾ን䈭䊡䊷䊁䉞䊥䊁䉞䊶⚦䈎䈇⸳ቯ䈏น⢻䊶䊋䉾䉼䈮䉋䉎⥄േಣℂ䊶䊒䊨䉫䊤䊚䊮䉫䈏ኈᤃ ( fortran, c, perl, ... )
ls
cd
pwd
cp
rm
mv
mkdir
rmdir
ln
cat
more
less
echo
man
su
chmod
vi

list files
change directory
path name of the current working directory
copy files
remove files
move files
make directory
remove directorylink fileconcatenate files

manual document
super userchange permission mode
visual text editor

4-9䊒䊨䉶䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮
SUPREM

4-10

Stanford University Process Emulation Module䋲ᰴర䉲䊚䊠䊧䊷䉲䊢䊮diffuseimplant
deposit
etch

䊶᜛ᢔ
䊶㉄ൻ
䊶䉟䉥䊮䊶䉟䊮䊒䊤䊶䊂䊘䉳䉾䉲䊢䊮
䊶䉣䉾䉼䊮䉫

䊒䊨䉶䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮䈱଀
File: ldd.s4
line x loc=0.0 tag=lft spacing=0.25
line x loc=0.45
spacing=0.03
line x loc=0.75
spacing=0.03
line x loc=1.4
spacing=0.25
line x loc=1.5 tag=rht spacing=0.25
line y loc=0.0 tag=top spacing=0.01
line y loc=0.1
spacing=0.01
line y loc=0.25
spacing=0.05
line y loc=3.0 tag=bot
region silicon xlo=lft xhi=rht ylo=top yhi=bot
bound exposed xlo=lft xhi=rht ylo=top yhi=top
bound backside xlo=lft xhi=rht ylo=bot yhi=bot
init boron conc=1.0e16
deposit oxide thick=0.025
implant boron dose=1.0e12 energy=15.0
deposit poly thick=0.500 div=10 phos conc=1.0e19
diff time=10 temp=1000
etch poly right p1.x=0.55 p1.y=-0.020 p2.x=0.45 p2.y=-0.55
diffuse time=30.0 temp=950
implant phos dose=1.0e13 energy=50.0
deposit oxide thick=0.400 spac=0.05
etch dry oxide thick=0.420
method vert fermi grid.ox=0.0
diffuse time=30 temp=950 dry
implant ars dose=5.0e15 energy=80.0
deposit oxide thick=0.15 space=0.03
diffuse time=20 temp=950
plot.2d boundታⴕ$ suprem ldd.s4

䊐䉜䉟䊦ฬ

4-11

4-12

䊂䊋䉟䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮PISCES

Poison and Continuity Equation Solver
Drift-Diffusion 䊝䊂䊦

Poisson ᣇ⒟ᑼ
䉨䊞䊥䊟ㅪ⛯䈱ᑼ

ャㅍᣇ⒟ᑼ

JG JG
  H \

U

wn
wt

1 JG JJG  J n  Gn  Rn
q

wp
wt

1 JG JJG   J p  G p  Rp
q

JJG
JG
J n q Pn nIn
JJG
JG
J p  q P p pI p

n

ni e

q
\ In
kT

G : 㔚ሶ䊶ᱜሹኻᒻᚑ
R : 㔚ሶ䊶ᱜሹౣ⚿วIn , Ip : Imref
p

ni e



q
\ I pkT

䊂䊋䉟䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮䈱଀
File: mosfet.p2

Title Short Channel (L=1.5 um) MOSFET
mesh
rectangular nx=38 ny=23
x.m
n=1
l=0
r=1
x.m
n=4
l=0.50r=.7
x.m
n=8
l=0.70
r=.75
x.m
n=15
l=0.95r=1.25x.m
n=24
l=2.05
r=1.0
x.m
n=31
l=2.30
r=.8
x.m
n=35
l=2.50r=1.33x.m
n=38
l=3.00r=1.40y.m
n=1
l=-.035
r=1
y.m
n=4
l=0
r=1
y.m
n=9
l=0.10r=1.25y.m
n=16
l=0.50r=1.15
y.m
n=23
l=2.0
r=1.25regionnum=1 ix.l=1 ix.h=38 iy.l=1 iy.h=4 oxide
regionnum=2 ix.l=1 ix.h=38 iy.l=4 iy.h=23 silicon
elec
num=1
ix.l=4ix.h=35
iy.l=1iy.h=1elec
num=2ix.l=1ix.h=38
iy.l=23
iy.h=23elec
num=3
ix.l=1ix.h=3iy.l=4iy.h=4elec
num=4ix.l=36ix.h=38
iy.l=4iy.h=4
dop
reg=2 unif conc=1e15 p.type
dop
reg=2 n.type gaussian x.right=.5 ratio.lateral=.8+
conc=2e19 junction=.5
dop
reg=2 n.type gaussian x.left=2.5 ratio.lateral=.8+
conc=2e19 junction=.5$
symb
gummel carr=1 electrons
method iccg dampedmater
num=2 g.surf=0.75
contact num=1 n.poly
models conmob temp=300 fldmob print
solve
initialsolve
v4=0.5 vstep=0.5 nsteps=4 electrode=4
log
outf=log
solve
v4=3
symb
newton carriers=1 electrons
method itlimit=50 autonr
solve
v1=-1.0 vstep=0.1 nsteps=20 electrode=1$options plotdev=stout
plot.1d x.axis=v1 y.axis=i4 log
endታⴕ$ pisces2 mosfet.p2

4-13䊒䊨䉶䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮䈫䊂䊋䉟䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮䈫䈱ㅪ៤
File: process.s4#meshline x loc=0.0 tag=lft spacing=0.25
line x loc=0.45
spacing=0.03
line x loc=0.75
spacing=0.03
line x loc=1.4
spacing=0.25
line x loc=1.5 tag=rht spacing=0.25#
line y loc=0.0 tag=top spacing=0.01
line y loc=0.1
spacing=0.01
line y loc=0.25
spacing=0.05
line y loc=3.0 tag=bot#
ㅜਛ⋭⇛#do the final anneal
diffuse time=20 temp=950#put down the aluminum
deposit alum thick=0.1#reflect the structure
struct mirror left
#etch off aluminumetch alum start x=-1.4 y=0.1
etch continue
x= 1.4 y=0.1
etch continue
x= 1.4 y=-0.7
etch done
x=-1.4 y=-0.7
plot.2d boundary#save it in Pisces format
struct pisc=ldd.mesh

4-14

File: mosfet.p2
Title Short Channel (L=1.5 um) MOSFET
mesh infile=ldd.mesh geom
symb
gummel carr=1 electrons
method iccg damped
mater
num=4 g.surf=0.75
contact num=1 n.poly
models conmob temp=300 fldmob print
solve
initialsolve
v1=0.6 vstep=0.6 nsteps=2 electrode=1
log
outf=log
solve
v1=1.8symb
newton carriers=1 electrons
method itlimit=50 autonr
solve
v2=0.1 vstep=0.1 nsteps=17 electrode=2
plot.1d x.axis=v2 y.axis=i2
end$ suprem process.s4$ pisces2 mosfet.p2

4-15

Drift-Diffusion 䊝䊂䊦䈱⺖㗴䊶 impact ionization 䈱෼᧤䉕ᓧ䉎䈱䈏࿎㔍
ᵹ૕ᣇ⒟ᑼ䈮䉅䈦䈩䈐䈢䈢䉄䈮㑐ᢙ䈱㔚⇇ଐሽᕈ䈏ᒝ䈇
G Dn Jn  D p J pDnan e bn E

Dp

b

ape p

E

䊶䊖䉾䊃䉣䊧䉪䊃䊨䊮ᵈ౉╬䈪䊝䊂䊦䊶䊌䊤䊜䊷䉺ଐሽᕈ䈏ᄢታ㛎䉕⺑᣿䈜䉎䈫䈇䈉䉋䉍ታ㛎䈮ว䈉䉋䈉䈮䊌䊤䊜䊷䉺䉕ㆬ䈹䊶㊂ሶലᨐ䉕䈬䈉ข䉍౉䉏䉎䈎䉭䊷䊃䊶䊃䊮䊈䊦㔚ᵹ䉼䊞䊮䊈䊦䈪䈱䋲ᰴర㐽䈛ㄟ䉄ᦨవ┵ MOSFET 䈪䈲㊀ⷐ

ኒᐲ௑ᢳᴺ(Density Gradient)䈪䈎䈭䉍䈱ലᨐ䉕౉䉏䉎䈖䈫䈏䈪䈐䉎JJG
JG
J =2 2 n
J n q Pn n In  /
/ 
6m
n

4-16

䊗䊦䉿䊙䊮ᣇ⒟ᑼ䈮ၮ䈨䈒䊝䊮䊁䉦䊦䊨䊶䉲䊚䊠䊧䊷䉲䊢䊮
Drift-Diffusion 䊂䊋䉟䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮䊗䊦䉿䊙䊮ᣇ⒟ᑼ䈮ၮ䈨䈒䊝䊮䊁䉦䊦䊨䊶䉲䊚䊠䊧䊷䉲䊢䊮

ᵹ૕ᣇ⒟ᑼ

䊗䊦䉿䊙䊮ᣇ⒟ᑼ

ᰴ䈱ᵹ૕㊂䉕⸘▚

G JG
G JG
JG w
G JG
w
wH w
f r , p, t  JG  G f r , p, t  F  JG f r , p, t
wt
w p wrwp㔚ሶỚᐲ nG㔚ᵹኒᐲ j㔚ሶ᷷ᐲ T㔚ሶ䈱ዪᚲᐔⴧಽᏓ䉕઒ቯ䈚䈩䈍䉍䇮䊖䉾䊃䉣䊧䉪䊃䊨䊮䈱㑐ਈ䈜䉎⃻⽎䉕⸥ㅀ䈜䉎䈮䈲ਇචಽG JG ·§wf
r , p, t ¸¨© wt¹collision
JG

G JG㔚ሶಽᏓ㑐ᢙ f r , p, t 䉕⸘▚Gr 䋺㔚ሶ䈱૏⟎JG
p 䋺㔚ሶ䈱ㆇേ㊂

H p 䋺㔚ሶ䈱䉣䊈䊦䉩䊷JG
F 䋺㔚ሶ䈮௛䈒ജ㔚ሶỚᐲ╬䈲ಽᏓ㑐ᢙ䈱䊝䊷䊜䊮䊃䈎䉌᳞䉄䉌䉏䉎

n
G
j
T

G JG
JG
³ f r , p, t d p

G JG
JG
wH
J
G
q ³
 f r , p, t d p
wp
JG
G JG
JG
1
n ³ H p  f r , p, t d p⇣䈭䉎䉣䊈䊦䉩䊷䈱㔚ሶ⁁ᘒ䉕⁛┙䈚䈩ᛒ䈉䈖䈫䈏䈪䈐䇮䊖䉾䊃䉣䊧䉪䊃䊨䊮⃻⽎䉕ᱜ⏕䈮ข䉍ᛒ䈉䈖䈫䈏䈪䈐䉎䇯

4-17䊝䊮䊁䉦䊦䊨ᴺᢔੂ䉕⏕₸⊛䈮⿠䈖䈚䇮୘䇱䈱㔚ሶ䈱ㆇേ䉕ㅊ䈦䈩䈇䈒
G JG
G JG
JG w
G JG
w
wH w
J
G
G
J
G
f r , p, t 
f r , p, t  F 
f r , p, t
wt
w p wrwpᢔੂ䈏ή䈔䉏䈳㔚ሶ䈲ㆇേᣇ⒟ᑼ䈮ᓥ䈦䈩േ䈒

G
dr
dt

JG
wH p
JG
wp

JG
dp
dt

䈠䉏䈡䉏䈱㔚ሶ䈲ㆇേᣇ⒟ᑼ䈮ᓥ䈦䈩ㆇേJG GF r, tೋᦼಽᏓG JG
f r , p, t⥄↱ㆇേ䈮ᢔੂ䉕⏕₸⊛䈮⿠䈖䈜ᤨ㑆 t ⚻ㆊᓟG JG
JG JJGGr
rt
Gp  pi t¦
iiᤨ㑆 t 䈫ᤨ㑆 t + 't 䈱㑆䈪ᢔੂ䉕ฃ䈔䈭䈇⏕₸ P0
ᢔੂG JG ·§w¨ f r , p, t ¸© wt¹collisionᢔੂ䉕ฃ䈔䉎⏕₸0~1䈱㑆䈱ੂᢙ r 䉕⊒↢

Ps§ t 't
1 ·'t
exp ¨  ³ ¦ dt ¸ # 1  ¦
t
i Wi
i Wi
©
¹
§ t 't
1 ·'t
1  exp ¨  ³ ¦ dt ¸ # ¦ti Wi©
¹ i Wir 䈱୯䈏䈖䈱▸࿐䈮䈅䉏䈳ᢔੂ䋲䈏⿠䈖䉎䈫䈜䉎

0 't
W1

't

't

W2

Wn

1

4-18

䊝䊮䊁䉦䊦䊨ᴺ䈱଀----- Mesh ----&xmesh
nelmts=99,
xextnt= 3600.d-8,/&ymeshnintvl=4,
nelmts=
15,
10,
20,
4,
dymin =
60.d-8, 12.d-8,
5.d-8, 8.d-8,
yextnt= 4600.d-8, 300.d-8, 100.d-8, 45.d-8,
grade =
-1,
-1,
0,
1, /
----- Device ----&regn
mater='si',/&regnmater='sio', ylow=5000.d-8,/
substrate doping; constant&doping
dop=-6.5d15/
gaussian channel implant&doping
shape='gauss', con=-7.0d17,
xloc= 850.d-8, yloc=4300.d-8,
xlen=20000.d-8, sigy=300.d-8,/
gaussian source implant; shallow&doping
shape='gauss', con=5.00d19,
xloc=
0.d-8, yloc=5000.d-8,
xlen=900.d-8, sigx= 50.d-8, sigy=200.d-8,/
gaussian source implant; deep
&doping
shape='gauss', con=1.00d20,
xloc=
0.d-8, yloc=4800.d-8,
xlen=300.d-8, sigx=100.d-8, sigy=300.d-8,/
gaussian drain implant; shallow&doping
shape='gauss', con=5.00d19,
xloc=3600.d-8, yloc=5000.d-8,
xlen=900.d-8, sigx= 50.d-8, sigy=200.d-8,/
gaussian drain implant; deep
&doping
shape='gauss', con=1.00d20,
xloc=3600.d-8, yloc=4800.d-8,
xlen=300.d-8, sigx=100.d-8, sigy=300.d-8,/----- Run ----&phys
rigor='mc','dde',lmp=t,
impacti(1)=t, impacti(2)=f,/&time
dtpois=5.0d-16, dtmc=5.0d-16, dtsc=5.0d-16,
stime=10.0d-12,/&cntl
iofreq=200, logfile=f,levelp=1, levela=1, levelc=1,
dbout='nmosfet',/&ninitial number =100000,/----- Boundary conditions ----&defcon
number=1, xlow=0.d-8,
xhgh=3600.d-8,
yloc=0.d0,/&defconnumber=2, xloc=0.d-8,
xlen=435.d-8,
sigx=73.d-8,
yloc=5000.d-8, sigy=125.d-8,/&defconnumber=2, xloc=0.d-8,
xlen=0.d-8,
sigx=218.d-8,
yloc=4875.d-8, sigy=375.d-8,/&defconnumber=3, xloc=3600.d-8, xlen=435.d-8,
sigx=73.d-8,
yloc=5000.d-8, sigy=125.d-8,/&defconnumber=3, xloc=3600.d-8, xlen=0.d-8,
sigx=218.d-8,
yloc=4875.d-8, sigy=375.d-8,/&defconnumber=4, xlow=350.d-8, xhgh=3250.d-8,
yloc=5045.d-8,/
back,source,drain,
gate&contcs
vappld= 0.00d0, 0.00d0, 3.00d0, 1.00d0,
phims='ec',/&intfacdefault=-1.0, reflect=0.5,
xlow=0.d-8, xhgh=3600.d-8, yloc=5000.d-8, /----- Statistical enhancement ----&statbx
percnt=f,/&statbx
sfactr=10.d0,
xlow=450.0d-08, xhgh=3150.0d-08,
ylow=100.0d-08, yhgh=5000.0d-08,
/

S

D

G

504.5
500
y [nm]
00

325 360

35B

x [nm]

4-19

nMOSFET䈮䈍䈔䉎㔚ሶ䈱䉣䊈䊦䉩䊷ಽᏓIBM DAMOCLES䈮䉋䉎(http://www.research.ibm.com/DAMOCLES/)䊝䊮䊁䉦䊦䊨䊶䉲䊚䊠䊧䊷䉲䊢䊮䈱⺖㗴䊶ᢔੂᤨ㑆 ~ 1a sec (10-15 ⑽)100,000 ୘䈱㔚ሶ䉕↪䈇䈩1p sec 䈱ㆊᷰ⸃ᨆ䉕ⴕ䈉䈱䈮 ⸘▚ᤨ㑆10 ᤨ㑆䋨Pentium4 3GHz)
ቯᏱ㔚ᵹ䉕᳞䉄䉎䈱䈲࿎㔍䊶䉸䊷䉴䊶䊄䊧䉟䊮䊶䉭䊷䊃䈱䉋䈉䈮ਇ⚐‛Ớᐲ䈱ᄙ䈇䈫䈖䉐䈮ᄙ䈒䈱㔚ሶ 䉼䊞䊈䊦䈱䉋䈉䈭․ᕈ਄㊀ⷐ䈭㗔ၞ䈱㔚ሶᢙ䈏ዋ䈭䈇
statistical factor 䈮䉋䉍䈅䉎⒟ᐲ
⸃ᶖ
sfactor =10⸘▚ᯏ䈱ᦝ䈭䉎ᕈ⢻䉝䉾䊒䈏ᔅⷐ

4-20

SPICE
Simulation Program with Integrated-Circuit Emphasis
1970ᐕઍ University of California, Berkeley 䈪㐿⊒࿁〝䉲䊚䊠䊧䊷䉺䈱ᮡḰ

4-21

4-22

࿁〝⸳⸘䈮䈍䈔䉎࿁〝䉲䊚䊠䊧䊷䉲䊢䊮䈱ᓎഀ

᭴ᗐ
઀᭽᳿ቯ

G.W.Roberts and A.S.Sedra “SPICE second
edition” Oxford University Press 1997 䉋䉍ℂᗐ䊃䊤䊮䉳䉴䉺䊶䊝䊂䊦䉕↪䈇䈩࿁〝ᬌ⸛
SPICE䈮䉋䉎ᬌ⸛઀᭽䉕ḩ䈢䈚䈩䈇䉎䈎䋿

䋲ᰴലᨐ䉕౉䉏䈩
࿁〝ᬌ⸛

NO

YES

ᦨೋ䈱䉲䊚䊠
䊧䊷䉲䊢䊮䋿NO

YESℂᗐ䊃䊤䊮䉳䉴䉺䊶䊝䊂䊦䉕↪䈇䈩SPICE䉲䊚䊠䊧䊷䉲䊢䊮

⸳⸘ቢ

⸳⸘䈚⋥䈚

NO ⠨䈋䈩䈇䈢ㅢ䉍䈱േ૞䈎䋿YES

SPICE ౉ജᢥ
䉺䉟䊃䊦
࿁〝⸥ㅀ
㔚Ḯ䊶ାภḮ
⚛ሶ⸥ㅀ䊝䊂䊦⸥ㅀ⸃ᨆ䊥䉪䉣䉴䊃
಴ജ䊥䉪䉣䉴䊃
.END

4-23

ᦨೋ䈱1ⴕ⋡䈲䉺䉟䊃䊦䋨࿁〝ฬ䇮⸳⸘⠪䇮ᣣઃ╬䋩䉕౉䉏䉎ታ㓙䈱䉲䊚䊠䊧䊷䉲䊢䊮䈪䈲ήⷞ䈘䉏䉎ⴕ䈱ᦨೋ䈱ᢥሼ䈏* 䈱ᤨ䈲ᵈ㉼ⴕ䈫䈭䉎+ 䈱ᤨ䈲⛮⛯ⴕ䈫䈭䉎ᦨᓟ䈱ⴕ䈲 .ENDᄢᢥሼ䊶ዊᢥሼ䈱඙೎䈲ή䈇File: cmosopamp.cir

଀ CMOS opamp
4
9

M8

M7
M5
6

Iref
+

1

M1
7
M3

3
M2

2
R

8

10

M4

Cc

M6

5
1
+


101
Vd

+


Rd

Vcm +



+

V+ = +Vd/2
100V = Vd/2
2

4-24

A CMOS Operational Amplifier** Circuit Description* Power suppliers
Vdd 4 0 DC +5V
Vss 5 0 DC -5V* Differential-mode signal level
Vd 101 0 DC 0V
Rd 101 0 1
EV+ 1 100 101 0 +0.5
EV- 2 100 101 0 -0.5
* common-mode signal level
Vcm 100 0 DC 0V* front-end stage
M1 7 1 6 4 pmostr L=8u W=120u
M2 8 2 6 4 pmostr L=8u W=120u
M3 7 7 5 5 nmostr L=10u W=50u
M4 8 7 5 5 nmostr L=10u W=50u
M5 6 9 4 4 pmostr L=10u W=150u* second gain stage
M6 3 8 5 5 nmostr L=10u W=100u
M7 3 9 4 4 pmostr L=10u W=100u* current source biasing stage
M8 9 9 4 4 pmostr L=10u W=150u
Iref 9 5 DC 25uA
* compensation network
R 8 10 10k
Cc 10 3 10pF
* model statements.MODEL nmostr nmos level=2 vto= 1 tox=8.5e-8.MODEL pmostr pmos level=2 vto=-1 tox=8.5e-8** Analysis Requests.DC Vd -4mV +4mV 100uV** Output Requests.PLOT DC V(3).end

SPICE䈱ታⴕ$ spice3
Program: Spice, version: 3f5
Date built: Sun Dec 26 09:36:30 JST 2004
Type "help" for more information, "quit" to leave.
Spice 1 -> source cmosopamp.cir
Circuit: A CMOS Operational Amplifier
Spice 2 -> run
Spice 3 -> display
Here are the vectors currently active:
Title: A CMOS Operational Amplifier
Name: dc1 (DC transfer characteristic)
Date: Tue Mar 29 09:43:01 2005
V(1): voltage, real, 81 longV(10): voltage, real, 81 longV(100): voltage, real, 81 longV(101): voltage, real, 81 longV(2): voltage, real, 81 longV(3): voltage, real, 81 longV(4): voltage, real, 81 longV(5): voltage, real, 81 longV(6): voltage, real, 81 longV(7): voltage, real, 81 longV(8): voltage, real, 81 longV(9): voltage, real, 81 long
ev+#branch: current, real, 81 long
ev-#branch: current, real, 81 longsweep
: voltage, real, 81 long [default scale]
vcm#branch: current, real, 81 long-- hit return for more, ? for help -vd#branch: current, real, 81 long
vdd#branch: current, real, 81 long
vss#branch: current, real, 81 long
Spice 4 -> plot v(3)Spice 5 -> write cmosopamp.raw
Spice 6 -> quit
Spice-3f5 done
$

4-25

4-26

࿁〝䉣䊧䊜䊮䊃
㗡ᢥሼ䈪䉣䊧䊜䊮䊃䈱⒳㘃䉕⴫䈜
C
D
E
F
G
H
I
J
K
L
M
O
Q
R
T
V
X

䉨䊞䊌䉲䉺
䉻䉟䉥䊷䊄
㔚࿶೙ᓮ㔚࿶Ḯ㔚ᵹ೙ᓮ㔚ᵹḮ㔚࿶೙ᓮ㔚ᵹḮ㔚ᵹ೙ᓮ㔚࿶Ḯ㔚ᵹḮ
JFET⚿ว䉟䊮䉻䉪䉺䉟䊮䉻䉪䉺
MOSFET଀

Cname n+ n- value
Cc 8 10 10pF
Dname A C model_name
DCLMP 3 7 DMOD
Ename n+ n- nc+ nc- value
EV+ 1 100 101 0 +0.5
Fname n+ n- vname value
F1 13 5 VSENS 5
Gname n+ n- nc+ nc- value
G1 2 0 5 0 0.1MMHO
Hname n+ n- vname value
HX 5 17 V2 0.5K
Iname n+ n- signal
Iref 9 5 DC 25uA
Jname D G S model_name
J1 7 2 3 JM1Kname Lname Lname value
K43 LAA LBB 0.99
Lname n+ n- value
LAA 42 69 1uH
Mname D G S B model_name
M1 7 1 6 4 pmostr L=8u W=120u
៊ᄬવㅍ〝Oname n1 + n1- n2+ n2- model_name O23 1 0 2 0 LOSSYMOD
䍨䍼䍐䍬䍽䍎䍵䍢䍵䍻䍚䍼䍛䍞 Qname C B E model_name
Q23 10 24 13 QMOD
ᛶ᛫Rname n+ n- value
Rd 101 0 1ή៊ᄬવㅍ〝
Tname n1+ n1- n2+ n2- Z0=value㔚࿶ḮVname n+ n- signal
Vdd 4 0 DC +5V䉰䊑࿁〝
Xname n1 n2 .. sub_name
X1 2 4 17 3 1 MULTIn : 䊉䊷䊄 䋨0䈲Ᏹ䈮䉫䊤䊮䊄 =0V䋩
A : anodeC : cathodeD : drain
G : gate
S : source B : body (sub)C : collector B : baseE : emitter

4-27

ାภ signal
DC value

PULSE( V1 V2 td tr tf PW T )AC magnitude phase_degrees
㔚࿶[V] 䈅䉎䈇䈲 㔚ᵹ[A]SIN( Vo Va freq td damp )V2

㔚࿶[V] 䈅䉎䈇䈲 㔚ᵹ[A]e-damp(t-td)

V1

tr
0

Vo

V

PW
T

td
td

ᤨ㑆 [sec]
1/freq

Vo  Va  e damp t td

sin ª¬ 2S freq t  td º¼

tf

PWL( t1 v1 t2 v2ᤨ㑆 [sec]… tn vn )㔚࿶[V] 䈅䉎䈇䈲 㔚ᵹ[A](t2,v2)

SFFM( Vo Va freq mdi fs )V

Vo  Va  sin ª¬ 2S freq  t  mdi  sin 2S fs  t º¼଀䋩

(tn,vn)(t1,v1)

vdd
dd 0 dc 5
vclk clk 0 dc 0 pulse(0 5 40n 2n 2n 40n 80n)

ᤨ㑆 [sec]

4-28⸃ᨆ䊥䉪䉣䉴䊃
೙ᓮᄌᢙ

.OPTIONS
଀䋩 .OPTIONS ABSTOL=1e-15 (㔚ᵹ♖ᐲ䉕1aA䈮ᄌᦝ䇯䊂䊐䉤䊦䊃䈲1pA).OPTIONS NOMOD (䊝䊂䊦䊶䊌䊤䊜䊷䉺䈱಴ജ䉕䈚䈭䈇䋩ೋᦼ୯.IC V(node1)=value V(node2)=value …..

⋥ᵹ᝹ᒁ.DC source_name start_value stop_value step_value䋲㊀䈮䊋䉟䉝䉴䉕᝹ᒁ䈜䉎䈖䈫䈏䈪䈐䉎଀䋩 .DC VDS 0 10 .5 VGS 0 5 1
VGS=0,1,2,3,4,5V䈮ኻ䈚䈠䉏䈡䉏VDS䉕0V䈎䉌10V䉁䈪0.5V
䉴䊁䉾䊒䈪᝹ᒁ

੤ᵹ๟ᵄᢙᔕ╵.AC DEC points_per_decade freq_start freq_stop.AC OCT points_per_octave freq_start freq_stop.AC LIN total_points freq_start freq_stopㆊᷰ⸃ᨆ.TR time_step time_stop಴ജ䊥䉪䉣䉴䊃
.PRINT DC output_variables.PRINT AC output_variables.PRINT TRAN output_variables.PLOT DC output_variables.PLOT AC output_variables.PLOT TRAN output_variables

output_variables䊉䊷䊄㔚࿶䋲䊉䊷䊄㑆㔚࿶㔚࿶Ḯ䉕ᵹ䉏䉎㔚ᵹV(node)V(node1, node2)
I(Vname)4-29䊑䊨䉾䉪ൻ
䊶䋱䈧䈱࿁〝䈱ਛ䈪ห䈛ㇱಽ࿁〝䉕2࿁એ਄૶䈉 .SUBCKT䊶ห䈛ㇱಽ࿁〝䉕䋲䈧એ਄䈱࿁〝䈪૶䈉
.includeFile : CMOSopamp1.include CMOSopamp1.SUBCKT cmos_opamp 1 2 3*connection +ve----| | |*-ve------| |*output-----|*A CMOS Operational Amplifier

Xop1 2 5 6 cmos_opamp
Xop2 3 4 7 cmos_opamp
Xop3 9 8 10 cmos_opamp
.ENDS

4-30

4-31

䊑䊨䉾䉪ൻ䈱଀
2

+

Vdc1
Vcm
䌾

Vdc2

5

1

R2

6

R4

8

R1


+

R3

4

3


Xop2
+

File: instrAmp.cir

⸘ⵝ䉝䊮䊒

+
Xop1


7
R5

9

R6

R7


Xop3
+

10

vo

Instrumentation Amplifier.include opamp.mod* signal sources
Vcm 1 0 0 SIN(0 25V 60Hz)
Vdc1 1 2 DC 10mV
Vdc2 3 1 DC 10mV
* instrumentation amplifier
Xop1 2 5 6 opamp
Xop2 3 4 7 opamp
Xop3 9 8 10 opamp
R1 5 4 10k
R2 5 6 100k
R3 4 7 100k
R4 6 8 10k
R5 7 9 10k
R6 9 0 10k
R7 8 10 10k* analysis request.tran 0.1ms 70ms 0 0.1ms* output request.print tran v(2) v(3) v(10).end

File: opamp.mod.SUBCKT opamp
1 2 3*connection +ve-| | |*-ve---| |*output--|*ideal Operational Amplifier
Iopen1 1 0 0A
Iopen2 2 0 0A
Eopamp 3 0 1 2 1e6
.ENDS

䊝䊂䊦
໡↪䈱SPICE䈪䈲䈐䉄⚦䈎䈒䊝䊂䊦䉕䉰䊘䊷䊃଀䋺 SILVACO SmartSpice 䈱 MOSFET 䊝䊂䊦
LEVEL=1
LEVEL=2
LEVEL=3
LEVEL=4
LEVEL=7
LEVEL=81
LEVEL=8
LEVEL=14
LEVEL=9LEVEL=30
LEVEL=31
LEVEL=18
LEVEL=44
LEVEL=88
LEVEL=20
LEVEL=21
LEVEL=22
LEVEL=23
LEVEL=24
LEVEL=25
LEVEL=26
LEVEL=27
LEVEL=29
LEVEL=32
LEVEL=15
LEVEL=16
LEVEL=35
LEVEL=36

MOSFET Model
MOSFET Model
MOSFET Model
MOSFET Model (BSIM1)
MOSFET Model (BSIM3 Version 2.0)
Berkeley BSIM3 MOSFET model
SmartSpice MOSFET Model BSIM3
Berkeley MOSFET Model BSIM4
Philips MOSFET Model
Philips MOSFET Model
Philips MOSFET Model
Deep Sub-Micron MOSFET ModelEKV MOSFET ModelHigh Voltage MOSFET Model
Honeywell SOI Model (HSOI)
Florida SOI Model
Florida SOI Model
MOSFET SOI Model (BSIM3SOI)STAG(Southampton Thermal AnaloGue) SOI Model
MOSFET SOI Model (BSIM3SOIv1)
MOSFET BSIM3SOIFD version 2 Model
MOSFET BSIM3SOIDD version 2
MOSFET BSIM3SOIPD version 2
CEA/LETI SOI model (LETISOI)
Leroux’s Amorphous-Si TFT Model
Berkeley Polisilicon TFT Model
RPI Amorphous-Si TFT Model
RPI polysilicon TFT Model

4-32

4-33

䊝䊂䊦䈏ή䈇႐ว - Mixed Modeᣂ䈚䈇⚛ሶ䉕⊒᣿ 㸢䊝䊂䊦䈏ή䈇䈱䈪࿁〝䉲䊚䊠䊧䊷䉲䊢䊮䈏䈪䈐䈭䈇 ?!
࿁〝䉲䊚䊠䊧䊷䉲䊢䊮䈫䊂䊋䉟䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮䉕⚿ว଀䋩Double-gate FD SOI-MOSFET 䉕↪䈇䈢SRAM䉶䊦
6
3

mLD1

WL

1
B1

6

4

3

mLD2
Cc

WL

5

mTR1

2

mTR2

C1
mDR1

C2
mDR2

B2

Mixed-Mode 䈱଀

4-34

File: sram.cir

File: dgmosN.m

Double Gate SOI 6T-SRAM
mLD1 6 5 4 5 acmp w=0.3u
mLD2 6 4 5 4 acmp w=0.3u
mTR1 1 3 4 3 acmn w=0.2u
mTR2 2 3 5 3 acmn w=0.2u
mDR1 4 5 0 5 acmn w=0.13u
mDR2 5 4 0 4 acmn w=0.13uCc
4 5 5fF
C1
4 0 1fFC2
5 0 1fF
Vdd 6 0 1.8
VB1 1 0 1.8 PWL(0n 1.8 .9n 1.8 1n 0 4n 0 4.1n 1.8+
4.9n 1.8 5n 0)
VB2 2 0 0.0 PWL(0n 0 2n 0 2.1n 1.8 2.9n 1.8 3n 0)
VWL 3 0 1.8 PWL(0n 1.8 .8n 1.8 .9n 0 2.1n 0+
2.2n 1.8 2.8n 1.8 2.9n 0 4.1n 0+
4.2n 1.8 4.8n 1.8 4.9n 0).include dgmosN.m.include dgmosP.m.options acct bypass=1 method=gear.controltran 1n 6nplot v(4) v(5)
.endc
.end

.model acmn numos++output
all.debug mesh doping+x.m n=1 l=0+x.m n=2 l=0.1+x.m n=12 l=0.5+x.m n=13 l=0.6+y.m n=1 l=-0.02+y.m n=2 l=0.0+y.m n=12 l=0.1+y.m n=13 l=0.12++region num=1 material=1 ix.l=1 ix.h=13 iy.l=1 iy.h=2+region num=2 material=2 ix.l=1 ix.h=13 iy.l=2 iy.h=12+region num=3 material=3 ix.l=1 ix.h=13 iy.l=12 iy.h=13+ material num=1 oxide+ material num=2 silicon+ material num=3 oxide++elec num=1 ix.l=1 ix.h=1 iy.l=2 iy.h=12+elec num=2 ix.l=1 ix.h=13 iy.l=1 iy.h=1+elec num=3 ix.l=13 ix.h=13 iy.l=2 iy.h=12+elec num=4 ix.l=1 ix.h=13 iy.l=13 iy.h=13++dop uniform p.type conc=1e+16 x.l=0.0 x.h=0.6 y.l=0.0 y.h=0.1+dop uniform n.type conc=2.e20 x.l=0.0 x.h=0.1 y.l=0.0 y.h=0.1+dop uniform n.type conc=2.e20 x.l=0.5 x.h=0.6 y.l=0.0 y.h=0.1++contact num=2 workfunction=4.9+contact num=4 workfunction=4.9+ models concmob fieldmob tempmob bgn srh conctau+ method ac=direct$ cider sram.cir

4-35ᦝ䈮䇮ᣂ䈚䈇䊂䊋䉟䉴䊶䉲䊚䊠䊧䊷䉲䊢䊮䈪േ૞⸃ᨆ䈚䈢䈇႐ว଀䋩 Single-electron 䊂䊋䉟䉴䉕⏕₸ㆊ⒟䊝䊂䊦䈪䉲䊚䊠䊧䊷䉲䊢䊮䈚䈢䈇
SPICE 䈮䊡䊷䉱䊷ቯ⟵⚛ሶ䉕ㅊട䈜䉎䈖䈫䈮䉋䉍น⢻
CAMSET (Circuit Analysis program including a Model of Single Electron Tunneling)
M.Kirihara, K.Nakazato, and M.Wagner, Jpn.J.Appl.Phys., vol.38, p.2028, 1999
File: turnstile.cam
nl

nlc nc

nrc

nr

vm
ng
vg

rld
vrld

File: turnstile.cir
asymmetric turnstile + load capacitor
rload nr rld 1e+25
cload nr 0
1.6e-17
Yturnstile.cam 3 0 nl nr ng turnstilevrld rld 0 0vm
nl 0 dc 0 pwl(3e-7 0 4e-7 0.1)
vg ng 0 dc 0 pulse(0 0.5 1e-6
+ 0.49999e-6 0.49999e-6 0.00001e-6 1e-6).tran 1e-10 10e-6 0 2e-9*.option temp=-273.05 rawstore=100.option temp=-273.05.save v(nr) v(ng).model turnstile y().endconnect nl,nr,ng{Temp = 0.1}
Vdd = 0.1
Cg = 2.67e-20 / Vdd
Cl = Cg * 3
Cr = Cg * 5
Rtr= 1e6
Rtl= 1e6{--------------------}
put t0 nl, nlc,Cl,Rtl
put t1 nlc,nc, Cl,Rtl
put t2 nc, nrc,Cr,Rtr
put t3 nrc,nr, Cr,Rtr
put cg nc, ng, Cg{--------------------}
do montecarlo$ cspice3 turnstile.cir