Tokyo Electron IR Day
January 20, 2021

CORP IR / January 20, 2021

1

Forward Looking Statements
 Disclaimer regarding forward-looking statements
Forward-looking statements with respect to TEL’s business plan, prospects and other such information are based on
information available at the time of publication. Actual performance and results may differ significantly from thebusiness plan described here due to changes in various external and internal factors, including the economic
situation, semiconductor/FPD market conditions, intensification of sales competition, safety and product quality
management, intellectual property-related risks, and impacts from COVID-19.
 Processing of numbers
For the amount listed, because fractions are rounded down, there may be the cases where the total for certain
account titles does not correspond to the sum of the respective figures for account titles. Percentages are calculatedusing full amounts, before rounding.
 Exchange risk
In principle, export sales of Tokyo Electron’s mainstay semiconductor and FPD production equipment are
denominated in yen. While some settlements are denominated in dollars, exchange risk is hedged as forward
exchange contracts are made individually at the time of booking. Accordingly, the effect of exchange rates on profits
is negligible.

FPD: Flat panel display
CORP IR / January 20, 2021

2

Agenda
1. Opening

15:30

2. Presentation

15:35

–
–
–
–
–

Aiming to Enhance the Corporate Value over the Medium to Long Term
Supercritical Drying Technology in the Cleaning Process for Leading-edge Devices
New Platform for the Etch Systems to Enhance Productivity
Latest Single Wafer Deposition Processes and Development Activities for the Future
TEL’s Strategies toward Digital Transformation

3. Q&A

16:35
17:15

CORP IR / January 20, 2021

3

Aiming to Enhance the Corporate Value over the Medium toLong Term
January 20, 2021
Toshiki Kawai
Representative Director, President & CEO

CORP IR / January 20, 2021

4

First and Foremost

We want to express our deepest
sympathies to all those who have been
affected by COVID-19 or other natural
disasters over the past year

CORP IR / January 20, 2021

5

A Year of Steady Progress

TEL’s business made steady progress
Reaffirmed TEL’s driving forces globally
Honored the TEL Values and shared themwith employees
Pride・Challenge・Ownership・
Teamwork・Awareness
CORP IR / January 20, 2021

6

Beginning of Big Data Era
Data transmissions
globally
CAGR 26%(2017-2022)
Source: CISCO VNI 2018

Data centric

Computer centric
1970

1980

1990

Mobile centric
2000

2010

2020

2030

A phase of higher growth with this data-centric era“Big years” ahead toward a future shift from selling products
to selling value
CORP IR / January 20, 2021

7

Changes in Society Occurring Amid COVID Crisis
Remote work
Online classes
Telemedicine
Video streaming services
Online games
Drug development using AI

IoT AR/VR/MR AI
5G/6G CLOUD

Transition to a datasociety will
accelerate

ICT* being implemented widely around the world tobuild a strong and agile society
CORP IR / January 20, 2021

* ICT: Information and Communication Technology

8WFE* Market$ Billion

2021:
Increased demand for advanced
semiconductors for hyperscale data centersand 5G smartphones will drive WFE market

80

60

40

20

0

2015

2016

2017

2018

2019

2020

2021

2022

Memory: Recovery in investment onliquidation of inventories
Logic/Foundry: Continued stable and highlevel of investment

TEL
forecast

Last year’s record WFE will continue into 2021
and beyond, leading to Big Years
CORP IR / January 20, 2021

* WFE (Wafer fab equipment): Wafer fab equipment refers to the production equipment used in
front-end production and in wafer-level packaging production.

9

Initiatives to Create New Value Toward Coming Big Years
Tokyo Electron Technology Solutions (TTS)
New production buildings began operation
Tohoku (Iwate): Jul. 2020-

Yamanashi: Aug. 2020-

Enhance production structure to swiftly prepare for futurerise in demand
CORP IR / January 20, 2021

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Initiatives to Create New Value Toward Coming Big YearsTEL Digital Design Square(Sapporo):
Began operation Nov. 2020

Miyagi Technology Innovation Center:
Completion scheduled for Sep. 2021

Meet needs for increasingly diverse extreme scaling
technology
CORP IR / January 20, 2021

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Initiatives to Create New Value Toward Coming Big Years¥400B in R&D investment in the three years from FY’20
1,139
838

1,202

1,350

971

FY'17 FY'18 FY'19 FY'20 FY'21 FY'22 FY'23

Continue proactive R&D investment to achieve
Medium-term Management Plan and maximize capture of growthpotential for the future
12
CORP IR / January 20, 2021

Initiatives for the Environment

Contribution frombusiness activities

SDGs

Our product initiatives
Energy saving, highoperation rate and highyield equipment

Reducesemiconductor power
consumption
Tokyo Electron supports the SDGs

With our technology both support the development of
ICT and reduce environmental burden
CORP IR / January 20, 2021

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Environmental Medium-term Targets for 2030
CO2 emissions reduction targets
Facilities

Products

30%

reduction

per wafer (vs 2018)
Note: Of the total CO2 emissions from TEL’s value chain,approx. 87% are generated during product use

Long-term goal
(2050)

70%

reductionof total emissions (vs. 2018)
Reduce energy consumption ateach facility by 1% per year
(per-unit basis, annual target, YoY)

Toward 100%
renewable energy use

As a leading corporation in environmental management, Tokyo Electron works actively to conserve the global
environment. We strive to contribute to the development of a dream-inspiring society by proactively promoting
the reduction of the environmental burden of both our products and facilities, and at the same time, providing
evolutionary manufacturing technologies that effectively reduce the power consumption of electronic products.

Support the development of a sustainable society through proactive
initiatives for environmental issues
14
CORP IR / January 20, 2021

As a SPE and FPD equipment maker
Corporate
Philosophy

We strive to contribute to the development of a
dream-inspiring society through our leading-edge
technologies and reliable service and support.

ICT

ESG

DX
CORP IR / January 20, 2021

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Supercritical Drying Technology in the Cleaning Process for
Leading-edge Devices
January 20, 2021
Keiichi Akiyama
VP & General Manager, CTSPS BU

CORP IR / January 20, 2021

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Release of New Product with Supercritical Drying Technology

CELLESTATM SCD
SCD: Supercritical dry
CORP IR / January 20, 2021

https://www.tel.com/news/topics/2020/20201208_001.html

17

Cleaning Process in Semiconductor Manufacturing
Post-etch cleaning

Contact etch

General cleaning process•

Cleaning by chemicals

•

Rinse

•

DryingCORP IR / January 20, 2021

Slit etch

Cleaning chamber’s state18

Technology Challenges in Cleaning for State-of-the-Art Devices
Chemicals

Rinse

Pattern collapse

Drying DRAM
Capacitor– Post-STI etch cleaning
Buried gate
– Mold wet etch after
capacitor electrode formation

Wet etch

Interconnects
Contact

BitlineSTI Logic– Post-fin etch cleaning– Post-nanowire/nanosheet
formation cleaning

FinFET

Nanowire

Nanosheet

Drying technology more difficult due to further scaling and higher aspect ratios
in device manufacturing
CORP IR / January 20, 2021

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Pattern Collapse Mechanism and Solution
Surface tension*
Large

Small

Before drying

After drying*Surface tension: The tendency of a liquid or solid to reduce its surface area

As aspect ratios have become higher, the collapse prevention approach of chemical
replacement for lowering surface tension, surface modification, etc., is reaching its limit
CORP IR / January 20, 2021

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Next Generation Drying Technology
 The next generation drying technologies are supercritical dry and sublimation dry
 As supercritical dry is the most effective solution for the issues in drying technology,
TEL has released the CELLESTATM SCD for mass production
 Supercritical dry is expected to be used in a wide range of applications, including forcomplex structures like capacitor electrodes and fragile films like PCRAM memory
cells
Application

Residue

Oxidation/material loss

Supercritical dry

Usable for complex
and/or high aspect ratio
structures

Very little

No

Sublimation dry

Not suitable for stacked
or fragile structures

Significant

Yes

CORP IR / January 20, 2021

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Supercritical Drying Technology
 What is supercritical?

 Challenges for introducing in semiconductor
production process– Stable operation at pressure regions hitherto unused– Particle control at the nano-level

Pressure𝑃𝐶– The state where temperature and pressure are above
their critical point– Holds properties between those of liquid and gas– Surface tension is zero

Supercritical
fluid

Solid

LiquidCriticalpoint

Triple
point
Gas

𝑇𝐶
Temperature

Effective against pattern collapse because surface tension is theoretically zero
Particle control is required at the nano-level for leading-edge processes
CORP IR / January 20, 2021

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Supercritical Drying Technology
Supercritical drying
Air

CO2

Supercritical state

Dryingalcohol

Traditional drying

TEL’s supercritical drying

Top View

Side View

Supercritical drying technology prevents pattern collapse
CORP IR / January 20, 2021

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Drying Technology Roadmap
2005

2D NAND
STI*1/AA*2

2010

2015

2020

2025

2030

IPA*3

DRAM
STI/Capacitor*1 STI: Shallow trench isolation*2 AA: Active area
*3 IPA: Isopropyl alcohol*4 RG: Replacement gate
CORP IR / January 20, 2021

Supercritical

IPA

Logic
Fin/GAA

IPA

Supercritical

3D NAND
RG*4

IPA

Supercritical24

Summary TEL is proposing supercritical drying
technology for pattern collapse,
a technological issue in wafer cleaning We will continue to offer new
technologies and solutions to various
technological issues in wafer cleaning
for leading-edge devices as a partnerof semiconductor manufacturers

CORP IR / January 20, 2021

CELLESTATM Pro SPM

CELLESTATM -i

EXPEDIUSTM -i

NS300Z
25

New Platform for the Etch Systems to Enhance Productivity
January 20, 2021
Isamu Wakui
VP & General Manager, ES BU

CORP IR / January 20, 2021

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Business Opportunities and Basic Strategy
 Continued high level of investment expected in the etch systems market
driven by 3D NAND and patterning Focus on HARC, patterning and interconnects, which leverage TEL’s strengths
Aiming to raise share and profitability
 Continuing proactive investment toward further market growth in future

CORP IR / January 20, 2021

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Challenges in Etch for Memory
DRAM

Interconnects

Aspect ratio = 50-70:1

3D NAND
2nd
tier

Contact

Capacitor

2 stacked tiers

1st
tier

BitlineSTI
Buried gate

Staircase
Word line isolation(Slit)

Gate

ChannelContact

100nm
diameterAs the number of layers and aspect ratio increase, it is necessary to balance
processing performance and productivity
CORP IR / January 20, 2021

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Challenges of Etch for Logic
GAA

Carrier waferInterconnects

FinFET

Nanowire FET

Nanosheet FET
Backside PDN*1

Contact

Wrap aroundcontact

Gate
Fin

SAC*3

STI

SAQP*2Multi-color
patterning

Flexible equipment layout sought for diversified etch processes
CORP IR / January 20, 2021

*1 PDN: Power delivery network*2 SAQP: Self-aligned quadruple patterning*3 SAC: Self-aligned contact

29

History of TEL Etch Systems
4, 5, 6 inch

300 mm

200 mmTEL1980’s
Etch Product1990’s2000’s2010’s

1990s

TEL Etch 480

UNITY™

Telius™

Tactras™

TEL’s first single wafer
dry etch tool

TEL’s first original
vacuum multi-chamber
toolWorld’s first parallelchamber toolWorld’s first addition of X axis
movement to robot arm
Realized 6 chambers in one system

TE5000TEL’s first original
dry etch tool
CORP IR / January 20, 2021

TE8500

UNITY™ II
TEL’s first platform withmulti-chambers

Tactras™ BXRealized 8 chambers
in one system
30

Episode™ UL Features

Flexible layout available to accommodate needs
Improved productivity through space saving and smart tools
CORP IR / January 20, 2021

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Episode™ UL: Layout

Select from 4 options
4, 6, 10, and 12 chamber designs

CORP IR / January 20, 2021

Flexible layout available to accommodate
fab space and target processes

32Episode™ UL: Space

Significantly reduced footprint per chamber
CORP IR / January 20, 2021

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Episode™ UL: Smart Tools

Includes automated parts exchange functions, multiple sensors and a high-speed control system
Autonomous process control possible through big data analysis using TEL’s own smart tools
CORP IR / January 20, 2021

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Episode™ UL Movie

CORP IR / January 20, 2021

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Summary Flexible layout:– Capable of selecting any number of chambers, from 4 to 12

 Space:– Significantly reduced footprint per chamber

 Smart Tools:– Includes automated parts exchange functions, multiple sensors and a high-speed control
systemAutonomous process control possible through big data analysis using TEL’s own smart
tools

CORP IR / January 20, 2021

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Latest Single Wafer Deposition Processes and Development
Activities for the Future
January 20, 2021
Hiroshi Ishida
VP & General Manager, TFF BU

CORP IR / January 20, 2021

37

Thin Film Formation Product Lineup
FurnaceSemi-batch ALD

TELINDY PLUS™

NT333™

Single Wafer Deposition

MRAM MTJ Formation
EXIM™

Triase+™

Oxidation / CVD / ALD / PVD
Batch Process*Process: Oxidation/CVD/ALD
Reaction: Thermal/Plasma
Material: SiO2/Si3N4/High-k/Metal
Feature: 100 to 150 wafers/batch

Semi-batch Process
Process: ALD
Reaction: Thermal/Plasma
Material: SiO2/Si3N4/High-k
Feature: 5 to 6 wafers/batch

Single Wafer Process
Process: CVD
Reaction: Thermal/Plasma
Material: Metal/High-k/Ferroelectric
Feature: Superior step coverage

Process: PVD
Reaction: Thermal/Plasma
Material: Magnetic material/Metal
Feature: Multi-film stacking* Installed base >10,000 @ 300mm
CORP IR / January 20, 2021

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Triase+™ EX-II™ Advance: TiN for Super High Aspect Ratio Features

DRAM

Bottom electrode3D NAND

Word liner barrier– State-of-the-art advanced sequential flow deposition (TiN)– High precursor and gas supply provides superior step
coverage ratio for the most advanced memory devices– Thin film continuity (Continuous film at <10Å)– Excellent thickness uniformity (1σ < 1%)– Wide temperature capability (400 to 600℃)– High speed pressure control enables higher productivity

 Applications– DRAM capacitor electrode– 3D NAND word line barrier– Other high surface area structures
CORP IR / January 20, 2021

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Triase+™ EX-II™ HK: High Quality High-k Dielectric Features– Designed for HfO process @ ~400℃ andultra low carbon (~1E19 atoms/cm3)– Liquid Hf precursor with DLI*1 vaporizer unit enables
ideal ASFD*2 process with high Hf flow
– Unique gas insertion enables non-uniformity of< 1% within wafer– Enhanced exhaust line with high-speed APC*3 and100A piping for longer wet PM*4 cycle

DRAM

High-k dielectric

3D NAND

Block high-k ~ core oxide dep

 Applications– DRAM peripheral high-k metal gates– 3D NAND block high-k dielectric
CORP IR / January 20, 2021

*1 DLI: Direct liquid injection*3 APC: Auto pressure control valve*2 ASFD: Advanced sequential flow deposition *4 PM: Preventative maintenance40Triase+™ EX-II™ HK: High Quality High-k DielectricUniformity
Hf conc. (%)

Coverage

HfSiO

HfO

73

100

Leak current
1.0x100
1.0x10-2
1.0x10-4

Map

1.0x10-6
1.0x10-8

Ave. thick (Å)

46.9

33.0

Range (%)

0.78

0.85

1σ (%)

0.16

0.19

Ave. - IL

32.0

19.9

Hole aspect ratio = 55:1

Leak current of HfSiO 2nm-thick is smaller thanthat of AlO 3nm-thick on TEL MOS capacitor

Enables high-k thin film formation on high aspect ratio structures
CORP IR / January 20, 2021

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Triase+™ EX-II™ MS: Multi-source Supply for Controllable Film Composition
Under development

FeRAM

 Features– New Chamber design for multi-source supply– Capable of composition ratio control

FeFET Applications– Ferroelectric FET for non-volatile memory– Extension to storage class memory– Extension to neuromorphic devices(memorizing synaptic weight)

Neuromorphic
Artificial synapse

Memorizing synaptic weight
CORP IR / January 20, 2021

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Triase+™ EX-II™ MS: Multi-source Supply for Controllable Film Composition
Under development
Ferroelectric properties
HfO2 (linear)

HfZrO (ferroelectric)

ZrO2 (antiferroelectric)

Multi-source supply enables controllable film composition,
making possible the formation of various functional films

In-situ TEM measurement with simultaneousvoltage cycling of antiferroelectric ZrO. Crystal
grains grow and shrink by field driven domain wall
migration as the voltage cycles from 0V4V0V.
Demonstrated at TEL Technology Center, America.
Reference: Lombardo et al., VLSI 2020

CORP IR / January 20, 2021

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New Opportunity: Area Selective Deposition for Sustainable Scaling Features

Area selective deposition (ASD)– Selective growth of film on metal/dielectric surface– Excellent surface pre-treatment technology for highselectivity between growth and non growth surfaces

Metal line

DielectricSelective grown dielectric– Logic BEOL, Fully Self-Aligned Via (FSAV)– To every scaled patterning for enhancing
lithography misalignment margin

Via hole

Metal

Cross-sectional image by TEM

 Applications

Conventional interconnects(without ASD)
Metal line

Selective growth film

Fully self-aligned via(with ASD)

Metal

Metal
Dielectric

Elemental mapping by EDX
Selective grown dielectric

Metal

Metal
Dielectric@TEL internal structure
Reference: S. Azumo, 32nd symposium, SCEJ

CORP IR / January 20, 2021

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Summary TiN for super high aspect ratio– Sustains DRAM capacitor scaling– Enhances word line performance in 3D NAND

 High quality high-k dielectric– Newly adopted for DRAM peripheral high-k metal gates– Enhances control gate performance in 3D NAND

 Multi-source supply– Realizes controllability of film composition

 Area selective deposition– Enlarges misalignment margins in patterning
Triase+™
CORP IR / January 20, 2021

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TEL’s Strategies toward Digital Transformation
January 20, 2021
Noritaka Yokomori
Deputy General Manager, Corporate Innovation Division

CORP IR / January 20, 2021

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TEL’s Vision for Digital Transformation
 Industry as a whole is increasingly adopting digital transformation (DX), and thesemiconductor industry is no exception. DX occupies an important position as one piece ofthe solution to demand for further scaling and multi-layering

AI chips

Autonomous

Cloud services

AR/VR

TEL DX Vision
A global company where all employees drive enterprise value creation
sustainably through activities such as value addition and efficiency
improvements by leveraging digital technology

CORP IR / January 20, 2021

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DX in Contributing to Customers’ Value Creation
Yield
R&D

Ramp upExamplePotential Application

HVM

C

B
A
Time

A Shorter R&D TAT

Swift POR proposal via
accurate simulation

B Shorter ramp up

Chamber-to-chambermatching, automatic
adjustment functions

Improved
C productivity/yield

Predictive maintenance, fault
detection, process adjustment
functions via monitoring andanalysis functions

From development to production, contributes tocustomers’ value creation in a range of settings
CORP IR / January 20, 2021

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DX in Raising Capital Efficiency
Potential Application

ExampleProduct life cycle
Planning

DesignPrototype

HVM

SupportModification

HigherA profitability

Provide high value-added
products that contribute tocustomers’ value creation

Shorter time to
B market

Shorter development period
through more efficientdevelopment environment

Lower
C production cost

Lower number of prototypes
by using simulation

Extended lifetime
D value

Propose appropriate
maintenance/modifications

ProfitA
D
B
data utilization

C
Cost

Time

From product planning to maintenance,
raises capital efficiency in a range of settings
CORP IR / January 20, 2021

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DX Activities
Digital enablersHigh-performance computing
Cloud infrastructure
AI technology
IoT, xR

Added value creation/improved
capital efficiency


3. Control

1. Monitoring

Feedback to thereal worldProgress in data sharing andcollaboration in supply chains
High expectations for AI androbot support of humans

Resolution of high value
problems

Visualization

4. Autonomy
Surrounding environment

Achieving goals

Autonomous
learning anddecision-making

High value problem-

Quality
Cost
Speed
Productivity
Energyconsumption

2. Analysis and prediction
Analysis and prediction with digitalized data

Digital transformation in resolving high value problems
CORP IR / January 20, 2021

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Overall Image of TEL’s DX Project
Develop applications that contribute to creation of corporate value via DX infrastructure

Product life cycle
Planning

ProfitDesignPrototype

HVM

SupportModification

HigherA profitability

ApplicationB

D Extended lifetime value

Shorter time tomarketdata utilization

Cost

Time

C Lower production cost

Create DX infrastructure for a platform for skills/culture/data application
DX
Infrastructure

ImprovingskillsFostering
consciousness/culture

Creating environment(Governance/data plafform)

Utilize DX infrastructure to develop applications that create corporate value
CORP IR / January 20, 2021

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DX Engineer Training Plan
Data science

Ability to understand and utilize data
science, such as data processing, AI
and statistics

Data engineering

Ability to give meaningful shape to data
science for TEL’s efforts to create
corporate value, and to implement andoperate in line with targets

Businessplanning

Ability to evaluate issues and theircontext, implement measures toresolve them, and link this to business(earnings ability)

Data science

Data engineering

Businessplanning

Systematically train human resources to utilize
data science in TEL’s business
CORP IR / January 20, 2021

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TELeMetrics™: Remote Connection with Customer Fabs
Customer site
CustomerserverTEL
TELeMetrics™

Data from tool

RS Outbound Server

Customer

TELeMetrics™
RS Inbound Server

Feedback by email, phone
call or conference call

Factory
server

TEL experts

Transformation from selling man-hours to selling value
CORP IR / January 20, 2021

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Remote Support Using AR
Customer’s cleanroom

TEL support center

Using smart
glasses

AR: “Augmented reality”; technology that can overlay information on a view of the real world via smart glasses

Apply new technology in this era of big data
to enhance service efficiency
CORP IR / January 20, 2021

54

Exploring Materials Through AI
A way to co-optimize process requirements and materials

Materials informatics
Academic
papersMaterials database+

Data science+

Experiment+

Explore materials for use in etching metal oxides
CORP IR / January 20, 2021

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Comparison of Predicted and Experimental Values
250

Etch rate (nm/min)

Etch rate (nm/min)

120
100
80
60
40

predicted values
200
experimental values
150
100
50

20

0

0

NF3 BCl3 ClF3 C2F6 BCl3 ClF3 C2F6 NF3Cl2 Cl2 O2 Cl2O2

Experimental
data

Candidates

-50

BCl3
Cl2
O2
Current

NF3
Cl2

C2F6
O2

Gases suggested throughmaterials informatics

Gases with higher etch rates than before weresuggested using machine learning
CORP IR / January 20, 2021

56

Process Optimization Through AI
Plasma atomic layer deposition (PE-ALD) film stress adjustment

Growth rate (Å/cycle)

2.00

Target stress(-100MPa)

Process: PE-ALD SiO2 deposition
Target: film stress → between -100MPa 0MPa

1.50

 Previous method using engineers– Unable to achieve target film stress levels

1.00– Gathered test data, studied with AI
0.50

EngineerEngineerML
Machine learning Optimization through machine learning

0.00
-600

-400

-200

0

– Achieved target stress levels

Stress (MPa)

Machine learning demonstrated the capability of process optimization
CORP IR / January 20, 2021

57

Supporting Customer Value with Autonomous Equipment
Control

Monitoring

Autonomous

Incoming information

Prediction

Physical model/chemical
model/machine learning

Tool & process data library

Process simulation

Autonomous learning by gathering necessary information
Equipment senses its environment and state to maintain optimal status
CORP IR / January 20, 2021

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TEL Digital Design SquareState-of-the-art office

TEL DX Vision
A global company where all employees drive thesustainable creation of enterprise value by
leveraging digital technology in activities including
adding value and raising efficiency

Development activities
Equipment
software

DigitaltransformationAI
application

Collaboration

Casual meetings

Grand Opening
November 24, 2020
Proudly celebrating 30 years
in Sapporo, Hokkaido, Japan

Osaka

Intensive work

SapporoTokyo

Opened the TEL Digital Design Square as the home base for DX activities
CORP IR / January 20, 2021

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TEL Digital Design Square Movie

CORP IR / January 20, 2021

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CORP IR / January 20, 2021

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