ILC 用衝突点検出器の設計に向けた
SOI ピクセル検出器としての取り組み
Activities of SOI Pixel Development for the Design of Vertex Detector at the ILC
山田美帆（myamada@metro-cit.ac.jp）都立産業技術高専
小野峻，坪山透，新井康夫，石川明正，倉知郁生（KEK）
原和彦，鈴木尚紀，大森匠（筑波大）
武田彩希，三住京也（宮崎大）
元吉真（T-Micro），SOIPIX R&D グループ

宇宙史構成員会議，2021 年 11 月 26 日

Accelerator

ILC Experiment

The ILC Technical DesignOverview

ILC Experiment

The International Linear Collider (ILC) is a high-luminosity linear electron-positron collider based on• e+e− linear collider
1.3 GHz superconducting radio-frequency (SCRF) accelerating technology. Its centre-of-mass-energy• Center of mass energy: 250 - 500 GeV (extendable to 1 TeV)
range is 200–500 GeV (extendable to 1 TeV). A schematic view of the accelerator complex, indicating• Precise measurement of the Higgs boson
theofthemajor
sub-systems,
isshowninFig.
3.1:• location
Search for physics beyond the Standard Model
Damping Rings

IR & detectors

花巻空港

e+ bunchcompressor

e- sourcee+ source

e- bunchcompressor

positronmain linac
11 km

一関

2 km

気仙沼

central region
5 km
electronmain linac
11 km
2 km
ILC TDR vol.4: Detectors
Figure3.1. T.Schematiclayout [hep-ex].
of the ILC, indicating all the major subsystems (not to scale).
ILD
Concept Group,
Abe et al., arXiv:1006.3396

2021/11/26

宇宙史構成員会議

仙台
2

ILC Experiment and Vertex Detector
ILC Experiment••••e+e− linear collider
Center of mass energy: 250 - 500 GeV (extendable to 1 TeV)
Precise measurement of the Higgs boson
Search for physics beyond the Standard Model

Existence of b, c quarks and tau lepton in event
Tagging of b, c, and tau,reconstruct tracks of daughter charged tracks
interpolate tracks to collision point to reconstruct vertices→ Displaced vertex and large significance of impact parameterd0 are evidence of existence of b, c, and tau.

Typically ~10 μm spatial resolution for pixel detector
Primary vertex

Secondary vertex
Tag algorithms have been developed in each experiment,
however, precision of b, c, and tau identification depends
on the performance of the silicon detectors.

Tertiary vertex

2021/11/26

宇宙史構成員会議

3ILC Experiment and Vertex Detector
Requirements:1) Single point resolution: better than 3 μmPixel size: ~20 × 20 μm22) Time resolution: single-crossing (554 ns interval) time resolution3) Detector occupancy: < 2 %4) Low material budget: X ≤ 0.1 − 0.2 % X0 / Layer
corresponds to ~ 100 - 200 μm Si, (supports, cables and cooling add further material)
low-power ASICs (~ 50 mW/cm2) + gas-flow cooling5) Radiation hardness:
TID : < 1 kGy / year
NIEL: < 1011 1MeV neq / cm2 / year

~1,300 bunches (every 554 ns)

ILC Beam Train

ILC TDR v4 Detector
LC Vertex / Tracking R&D 2nd Nov. 2015

2021/11/26

宇宙史構成員会議

4

SOI Pixel Sensor

Double SOI Pixel Detector

SOI: Silicon-on-Insulator technology
Utilize 0.2 μm FD-SOI CMOS process byLapis Semiconductor Co. Ltd.
SOIBOX

SOI Pixel Detector: Monolithic type detector-LSI is processed on Buried Oxide layer (BOX)
Smaller pixel size, complex circuit in pixel
Low material budget
High speed, low powerLess single event effects (SEE) probability
Low cost

Middle SOI p+(SOI2)

BNW‒BPW‒

p type high-resistivity ‒+‒Silicon Sensor
Back plane (p+)

VSOI2n+Vbias

NMOS‒++++Charged particle

Double SOI Pixel Detector
Middle Si layer suppresses- Back gate effect- Sensor-Circuit cross talkIllustrated by T. Tsuboyama (KEK)

Sensor thickness: 50 - 500 μm
Sensor Resistivity: > 1 kΩ∙cm
SOI2 thickness: 150 μm (n-type)
SOI2 Resistivity: < 10 Ω∙cm

Middle Si layer shields coupling between sensor and circuit.
It is useful for analog and digital mixed circuit in pixel.
-PMOS

LSI circuit

Radiation damage (TID)
It is able to compensate electric field generated by trapped holes in the BOX.
It can be used in high radiation environment (~1MGy).
(K. Hara, Vertex2017, Sep. 11-15, 2017, Las Caldas)

2021/11/26

宇宙史構成員会議

5

Architecture of SOFISTIn a Pixel- Pre-amplifier- Comparator
Keep the analog signal and time stamp
if a signal exceeds a threshold Vth.
- Shift register (Hit memory)
Latch for multiple memories.
- Analog signal memory
Store signal charges up to two (or more) hits.
- Time stamp circuit
Store time stamps up to two (or more) hits.
On Chip- Column ADC
Digitize analog signal and time stamp.
- Zero-Suppression logic
Extract hit pixels and reduce the data totransfer to backend.
2021/11/26

SOFIST Pixel Circuit

Pre amp(Charge SensitiveAmplifier)Testpulse

Shift register

Comparator
Vth
S1

S3

S2ResetTime stamp memory

Analog signal memory
S1Sensor Node

宇宙史構成員会議

Signal
Out

S1

S2

S2

S3

S3RampSignalTimestamp
Out6

983

4

Residual
Residual Y:Y5
h_resy_4
h_resx_5

160
220

SOFIST #1

140
200
180
120
160

Entries
Entries

2401
1784

Mean
Mean
StdStdDev
Dev/ ndfr2r/2ndf

0.16770.01972
2.825
2.721
12.58
16.79/ 9/ 9
227.7
148.5
±±7.6
6.4

Constant
Constant
0.1282± 0.0386± 0.0481
Mean
Mean 0.1668

100140Sigma
Sigma

1.367
1.378
±±0.035
0.048

12080

1.37 ± 0.04 μm
1.49 ± 0.06 μm
1.33 ± 0.03 μm

Events35

Upper

Residual
X54
Residual
ResidualX:Y:
EventsEvents

4SOFIST1240
220

SOFIST #1200

Entries

2401

Mean

< 0.1204

Std Dev

2.694

r 2 / ndf

11.4 / 9180

Constant

160

Mean0.06111 ± 0.03750

Sigma

1.348 ± 0.035

231.2 ± 7.91401006080

1.35 ± 0.04 μm
1.38 ± 0.05 μm
1.32 ± 0.03 μm

120100806040604020204000<15<15h_resy_520<10<10<5<500551010
1515
Residual
ResidualX Y[um][um]0<15<10<5051015
Residual Y [um]Lower

SOFIST1
SOFIST2
SOFIST3
SOFIST4
Position resolution Time resolution
Full function
Full function
σ~1.4 μm
σ~1.55 μs(30×30 μm2 pixel) (20×20 μm2 pixel)

Pre amp(Charge SensitiveAmplifier)Testpulse

Sensor Thickness: 500 μm

2021/11/26Sensor Node

宇宙史構成員会議

S1S3

S2ResetReadout and Sensor depletion layer
12-bit external ADC, 500 μm (Full depletion)
8-bit on-chip ADC, 500 μm (Full depletion)
12-bit external ADC, 200 μm (Partial depletion)

Shift register

Comparator
VthTime stamp memory

Analog signal memory
S1Signal
Out

S1

S2

S2

S3

S3RampSignalTimestamp
Out7

SOFIST2
INTPIX4#1

INTPIX4#2

Upper

Sensor Thickness: 65 μm

INTPIX4#3

Upper

INTPIX4#4
SOFIST2 SOFIST2 SOFIST2
#1
#2
#3

Timing detector(Scinti. + MPPC)

Lower

BeamRoIPreliminary

450

Timestamp difference between
SOFIST ver.2 #1 and #2
EventsTimestamp (IP-18) [µs]5007040060350300600500400402003015020Pre amp(Charge SensitiveAmplifier)Residual_ALL_O250us08521
Entries< 0.966
Mean
2.362
Std Dev
10Underflow
13Overflow
Integral8441
r2 / ndf
159.8 / 96
608.1 ± 8.5
Constant< 1.009 ± 0.024
Mean
Sigma
2.188 ± 0.019

50250

SOFIST1
SOFIST2
SOFIST3
SOFIST4
Position resolution Time resolution
Full function
Full function
σ~1.4 μm
σ~1.55 μs(30×30 μm2 pixel) (20×20 μm2 pixel)

Active area

Timestamp correlation between
SOFIST ver.2 #1 and #2Lower

Testpulse

Shift register

Comparator
VthS1ResetS1300200

Time stamp memory

Analog signal memory
SignalOut100050100

150200250300350 400 450 500
Timestamp (IP-08) [µs]10000
<20 <15 <10<50510 15 20
Timestamp Difference (us)Sensor NodeS1S2S2S3S310050S3S2Ramp
SignalTimestampOut

Intrinsic resolution: 2.19/√2 ~ 1.55 μs
2021/11/26

宇宙史構成員会議8Figure 9: Time difference of two pixels in the same 2-hit clusters for
two DUTs.

Pixel size: 30 × 30 μm2

charge share simultaneity because of the calibration accuracy of the timestamp memory between the two sensors. We calibrate the time-to-timestamp analog-todigital (ADC) relation for each pixel using simple linearfunctions.
Timestamp residual

SOFIST3

Figure 11: Storage signal gate (1 ms) and continuous trigger signals tothe laser (upper) and data acquisition outputs (lower) showing threepair distributions for the analog signal and timestamp ADCs.

Upperlaser (wavelength: 1064 nm) three times in a 1
Timestamp difference between #1pulsed
andIR#4.

Events140145150

ms storage period. Fig. 11 shows the ADC distributions
Fig. 12showsperiod.
the ADCcount distributions correfor the three hits during
a storage
The oscilloscope trace showsthat a storageof 1 ms durationsponding
to all signal
six memories.
The figures for the three
was sent to the analog
sensor, andtrigger
signals show
were sent
signalmemories
the tolaser intensity spreadthe periodical laser.
Theamong
ADC data
werepixels.
read outAnalog
after signal output ofsharedseveralthe storage155
gate more
was setthan
to “off.
ʟAs shown, the analog
3σʟ
from test
the pedestal was assumed as hit
Multi-memory
readout
signal ADC distributions were almost unchanged overpixels.hasThemean valuesof the hitandsignal distributions
SOFIST3
three
the three hits
representing
stable hit,laseranalog
pulses, signal
whereasSOFIST1
are278.0,275.6,
and285.7
ADCs,
demonstrating
statimestamp
memories.
the timestamp ADC distributions displayed a difference
laser intensity.
representing
thebledifferenttimingof thelaser input.
Multi-memory
readoutschemewas tested Position resolution

σ~1.4 μm
by injecting a IR laser three times in a 1 ms
The ADC distributions of the three timestamp memoperiod.
160
ries represent the hit pixels, as defined using the analog
information. The hit time is converted from ADC toTime difference (μs)
time using the calibration result. The meanPre
valueforamp
Figure10: Residualof timestamps of2.71/√2
the two chips~
in thebeamμs(µs).
Intrinsic
resolution:
1.92
each memory was 109.4, 487.5, and 874.7µs,Sensitiverepre(ChargeAmplifier)senting the laser trigger signals injected every
385 µs.
3.2.Sensor
Multi-memory
readout test300 μm
Thickness:
165
From the above study, we conclude that per-pixel ResetmultiTest
SOFISTv3 is implemented with multi-memories
memory is implemented as expected, providing
an anapulse(three stages) that enable the storage of multi-hits. The
log signal and timestamp information of up to three hits
multi-memory readout scheme was tested by injecting aper storage.
Figure 8: The setup used in the beam test.

9: Time difference of two pixels in the same 2-hit clusters forTs.

72

share simultaneity because of the calibration acof the timestamp memory between the two senAnalog signal
We calibrate the time-to-timestamp analog-toFigurestable
11: Storage
signalgate (1(~180ms) and ADC).
continuous trigger signals to
Represent
laser
pulsesSensor Nodethe laser (upper) and data acquisition outputs (lower) showing three(ADC) relation for each pixel using simple linear
Timestamppair distributions for the analog signal and timestamp ADCs.
ons.
Show different timing of the laser injection (110, 490, 880 ADC).
2021/11/26

宇宙史構成員会議

Lower

SOFIST2
SOFIST3
SOFIST4
Time resolution
Full function
Full function
σ~1.55 μs(30×30 μm2 pixel) (20×20 μm2 pixel)
Shift register

Comparator
VthS1

Time stamp memory

Analog signal memory
S1

S3

S2

Signal
Out

S1

S2

S2

S3

S3RampSignalTimestamp
Out9

SOFIST4by Tohoku-Micro Tec (T-Micro), M. Motoyoshi
http://www.t-microtec.com
Upper

Two SOFIST4 chips (lower and upper) are connected by micro bump (3 μm diameter) pixel by pixel.
→ Keep pixel size small and implement complex circuit three dimensionally.
UpperBondPassivation

Back gate adjust

Lower

SOFIST1
SOFIST2
SOFIST3
SOFIST4
Position resolution Time resolution
Full function
Full function
σ~1.4 μm
σ~1.55 μs(30×30 μm2 pixel) (20×20 μm2 pixel)
High R-Si

High R-Si

Pre amp(Charge SensitiveAmplifier)

Lower

Lower Chip (Pixel):
Used as sensor and implement analog circuit in a pixel.
Upper Chip (Pixel):
Sensor layer is removed by wet etching and then formed Al pad for wirebonding on the BOX.
Digital circuits/memories are implemented in a pixel.

Testpulse

2021/11/26

BumpReset

宇宙史構成員会議

S1

S1

S3

S2

Time stamp memory

Analog signal memory

Bump
Sensor Node

Shift register

Comparator
VthSignal
OutS1

S2

S2

S3S3Ramp
SignalTimestampOut

10

SOIPIX 3D Stacking Technology
Au Cylinder Bump (3 µmΦ)
Normal SOIPIX

2021/11/26

Au Under Bump Metal (5 ✕ 5 µm2)

宇宙史構成員会議

via 511

SOIPIX 3D Stacking Technology

Bump

2021/11/26

宇宙史構成員会議

12

SOIPIX 3D Stacking Technology

through BOX viaLower Chip

2021/11/26

宇宙史構成員会議

13

SOIPIX 3D Stacking Technology

3D Stacking SOIPIX
2021/11/26

宇宙史構成員会議

14

SOFIST4Lower and Upper Pixel Layout

Two SOFIST4 chips (lower and upper) are connected by micro bump (3 μm diameter) pixel by pixel.
→ Keep pixel size small and implement complex circuit three dimensionally.
Upper

BondPassivation

Back gate adjust
COMP

GND

bump

High R-Si

SIGNAL

VDD

under bump metalHigh R-SiLower

SOFIST4 Chip
Chip size: 4.45 × 4.45 mm2
Pixel size: 20 × 20 μm2
Active area: 2.08 × 2.08 mm2Sensor type: FZ p-type
Sensor thickness: 300 μm
Sensor resistivity: 3 − 10 kΩ・cm
2021/11/26

宇宙史構成員会議

15SOFIST4, β-ray track*The sensors we have evaluated were single-SOI FZ-n type sensor due to the process issue of the 3D stacking.
→Comparator, Shift-register and Timestamp functions does not work at this time.
90Sr

Row Address

β-ray

External Trigger
100 HzPre amp(Charge SensitiveAmplifier)Testpulse

S1

S3

S2

ResetSensor Node2021/11/26

Shift register

Comparator
VthAnalog Signal (ADC)Time stamp memory

Analog signal memory
S1Signal
OutS1S2S2

S3

S3RampSignalTimestampOut

β-ray track

Column Address
宇宙史構成員会議16SOFIST4, Bump Connection YieldPixels*The sensors we have evaluated were single-SOI FZ-n type sensor due to the process issue of the 3D integration.
→Comparator, Shift-register and Timestamp functions does not work at this time.
90Sr

β-ray

External Trigger
100 HzTestpulse

Shift register

Comparator
VthS1

S3

S2

ResetSensor NodeSignal
OutS1

S2

S2

S3

S3RampSignalNoisy

Hit/Pixel

No Signal
Noisy

Time stamp memory

Analog signal memoryS1Row

Pre amp(Charge SensitiveAmplifier)Hit Map (50 kEvents)

No Signal

Timestamp
OutNoisy

No SignalConnection Yield:(102 × 102 − 2) / 102 × 102~ 99.98 %Reject the outermost pixels for the calculation.

Column2021/11/26

宇宙史構成員会議

17

SOFIST4

Beam Test
Beam: 120 GeV proton (Fermilab Beam Test Facility)
DAQ rate: ~120 events/s

SOFIST4
Pixel size: 20 × 20 μm2
Pixel array: 104 × 104 (2 × 2 mm2)
Readout: External 12-bit ADC

XRPIX5 (SOIPIX)
Trigger counter
Pixel size: 36 × 36 μm2
Pixel array: 608 × 384 (24.6 × 13.8 mm2)
Region of Interest function
Readout: External 12-bit ADC
2021/11/26

FPIX2 (SOIPIX)
Telescope for SOFIST
σ ~0.7 μm
Pixel size: 8 × 8 μm2
Pixel array: 128 × 128 (1 × 1 mm2)
Readout: External 12-bit ADC

Beam
宇宙史構成員会議18

* Active area: FPIX2: 1 × 1 mm2, SOFIST4: 2 × 2 mm2

Hit Correlation

SOFIST4

FPIX2

Hit position correction between telescope (FPIX2) and SOFIST4 IP-11 in x and y-direction.
Preliminary

1215001081000

6Preliminary

1500

5431000

2000

Preliminary201500

151000400500

1000

500

00500

1000

1500
2000
FPIX2 IP12 x (um)00025201500

1510500

5101500
2000
FPIX2 IP12 x (um)Preliminary

10500

22000

1000

2500

25

FPIX2 IP15 x (um)1462000

FPIX2 IP14 x (um)2000

SOFIST4 IP11 x (um)

FPIX2 IP13 x (um)x-direction

500

1000

1500
2000
FPIX2 IP12 x (um)0005500

1000

1500
2000
FPIX2 IP12 x (um)016141500

121010008Preliminary
1500

86100042021/11/26

500

1000

1500
2000
FPIX2 IP12 y (um)0201500
151000Preliminary
1500

1000

450050052200Preliminary

2000

10650010252000

FPIX2 IP15 y (um)Preliminary

122000FPIX2 IP14 y (um)182000

SOFIST4 IP11 y (um)

FPIX2 IP13 y (um)y-direction

00500

1000

1500
2000
FPIX2 IP12 y (um)000

宇宙史構成員会議

500

1000

1500
2000
FPIX2 IP12 y (um)

0500

00500

1000

1500
2000
FPIX2 IP12 y (um)2220
1816141210864
2019Telescope

Residual

山内大輝，修士論文，2019 年
INTPIX4Ғ஖෾մ೵岈‫੷ݡ‬岜岤

KEK AR Test Beam Line (AR-TB): Electron beam (1- 4 GeV)GEANT4岅岢岥峄峬峲峹屎峄峴崀
Layer #4

Layer #3 Model &DUTParameters
Beam start point

Layer #2t 廘宰
Layer #1
3mm
30mm

Beamt 廘宰筑波大学，素粒子実験研究室

̱t 廘宰
30mm

30mm

Position resolution: 1.56μm
6@FTBL in 2019

 Charge Share岹岳峆‫਼ؖ‬岁岵峚峸岻屎岬बҕ岈峡岼峈峸岅෾ഓ屳岥屭岂岁Charge Share
孫座孬岬࠸‫ݳ‬屆
読み出し速度向上のために峄峬峲峹屎峄峴崀5ড়݇宷宀學孳孳宸宰孯季季座季宀季孷孱孳宸宰孫宅宨室宰季宷宨家宷它安宑宄宏孬 再設計を行なった INTPIX4NA によりCluster definition宷宀孶孳孳宸宰孯季季座季宀季孴孱孶宸宰テレスコープシステムを構築する．
宷宀孶孳孳宸宰孯季季座季宀季孶孱孴宸宰
Cluster Seed宷宀學孳宸宰孯季季座季宀季孴孱孶宸宰
KEK AR-TB での実用化を目指している．
Seed寲2pixel range宷宀學孳宸宰孯季季座季宀季孷孱孳宸宰座

Energy-shared pixels

ビームエネルギーに対する位置分解能のシミュレーション
Resultਤ 5.40: x ํ޲࢒ࠩ෼෍ʢඈ੻બผ‫ޙ‬ʣe- (E GeV)

Tracker 0
INTPIX4G4 Simulation

DUTTracker2 (SEABAS2)
Tracker 1 DAQBoard3ທ岈峕島峐岸屎岬DUT岈઴岅ഓ஖屆(Tracker 0, Tracker 1, Tracker 2)
Pixel Array: 832 × 512pixels
峞島峮屎峌
Active Area: 15.4 × 10.2 mm2
Pixel Size: 17 μm
ుࢢ岵峚峸岻屎 : E GeV (E = 1,2,3,4)
Sensor Type: FZ N-type: t 廘宰 (t = 50, 300, 500)
Sensor Thickness: ~300 峈崀峂屎޲μm

Beam Test
@ELPH
筑波大学
素粒子実験研究室
鈴木尚紀

峡岼峈峸峂岱峇 : 17 廘宰

物理学会，2021 年

ֱౕ岂Ғ஖岬島崀峍峭岅山岀ࣻड़屆Analog signal readout(13 block parallel)

Readout:
12 bit, 16 ch ADC(ֱౕ dx/dz : ඬ६ยࠫ0.001rad岈岹岳峆෾ා,2021/11/26Ғ஖ X, Y : 寲 50um岈൥ҕ಼岁島崀峍峭岅)

4GeV岁岉孺廘宰ఖౕ岈Ғ஖෾մ೵
宇宙史構成員会議

Beam Energy (GeV)20

ADC 分解能の見積もり
位置分解能を維持しつつ，読み出し速度向上のために必要な ADC の分解能を見積もる．
ビームエネルギー 4 GeV のとき，INTPIX4 の有感領域におけるビームレートはおよそ100 — 300 Hz 程度．

位置分解能
電荷重心法で精度良くヒット位置が再構成可能な ADC のビット数
トレードオフ
読み出し速度
ビームレートと同程度のレートで有感領域全体を読み出せる ADC のビット数

実ビームを使ってヒット位置の再構成とトラック再構成，位置分解能への影響を評価する．
必要統計量とビームタイムの見積もり
Frame rate: 35 Hz @ ADC 12 bit（2016 年のデータより）
1 Run: 30,000 events/30 min（10 s/1 spill, 14 s interval）
Tracking Eﬃciency ~10%
1 Run: 3,000 tracks/30 min
4 bias points × 12,000 tracks = 4 × 4 × 0.5 h = 8 h
3 sensors × 8 h = 24 h (2 shifts)
2021/08/03

ELPH

9筑波大学Hit Position Correlation

Telescope
Beam Test @ELPH (800 MeV Positron Beam)
Telescope
INT4NA
IP-22

IP-12

Spacer3 cm

Telescope
INT4NADUT
INT4NA
IP-14

IP-13

Spacer3 cm

Spacer3 cm

素粒子実験研究室
鈴木尚紀

Preliminary

Trigger counter
XRPIX5 (RoI)
IP-16

IP-15

Spacer3 cm

ResidualSpacer
3 cm

Preliminary

800 MeV
Positron beam

Trigger
Timestamp
ResetBusyoutCLKN

NN

NDAQ Master Board

Preliminary
TriggerenableTrigger in

筑波大，宮崎大，都立産技高専
Preliminary

大森くん

現地での解析結果速報
位置分解能: 30-26 μm（センサー間アライメントなし）

2021/11/26

鈴木くん

参考: G4 Simulation ~25 μm（800 MeV e+, 300 μm 厚センサー）
宇宙史構成員会議

22Summary
SOI 技術によるセンサー部回路部一体型のモノリシック型ピクセル検出器の開発を行なっている．
特に ILC 実験での崩壊点検出器での実用化を目指しプロトタイプ SOFIST の設計，評価を行なってきた．
SOFIST全ての必要な機能をピクセル内に実装した SOFIST4 の評価を進めている．
- 金マイクロバンプを用いた三次元積層化技術により，ピクセルサイズを 20 μm に保ちつつ，回路実装面積の拡張に成功した．
- マイクロバンプ接続歩留まりは 99.9 % を確認している．
- ビーム試験により，ヒットの検出を確認している．現在はトラックの再構成と詳細アライメントを進めている．
- 今後の課題は消費電力と放射線耐性である．消費電力削減のため，ピクセル部のアナログ回路を再検討する必要がある．
Telescope
センサー性能評価用のテレスコープシステムの開発も行っている．
KEK AR-TB での実用化を目指し，システムの構築，性能評価を行っている．
- ビーム試験データの解析を進めている．現地の解析にて位置分解能についてはシミュレーションに近い値を得ている．
- 今後の課題はビームレートに合わせた DAQ レート（読み出し速度）の向上である．
2021/11/26

宇宙史構成員会議

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