MT-088
TUTORIAL
Analog Switches and Multiplexers Basics
INTRODUCTION
Solid-state analog switches and multiplexers have become an essential component in the designof electronic systems which require the ability to control and select a specified transmission path
for an analog signal. These devices are used in a wide variety of applications including multichannel data acquisition systems, process control, instrumentation, video systems, etc.
Switches and multiplexers of the late 1960s were designed with discrete MOSFET devices andwere manufactured in small PC boards or modules. With the development of CMOS processes(yielding good PMOS and NMOS transistors on the same substrate), switches and multiplexers
rapidly gravitated to integrated circuit form in the mid-1970s, with product introductions such as
the Analog Devices' popular AD7500-series (introduced in 1973). A dielectrically-isolatedfamily of these parts introduced in 1976 allowed input overvoltages of ± 25 V (beyond the
supply rails) and was insensitive to latch-up.
These early CMOS switches and multiplexers were typically designed to handle signal levels up
to ±10 V while operating on ±15-V supplies. In 1979, Analog Devices introduced the popular
ADG200-series of switches and multiplexers, and in 1988 the ADG201-series was introduced
which was fabricated on a proprietary linear-compatible CMOS process (LC2MOS). These
devices allowed input signals to ±15 V when operating on ±15-V supplies.
A large number of switches and multiplexers were introduced in the 1980s and 1990s, with thetrend toward lower on-resistance, faster switching, lower supply voltages, lower cost, lower
power, and smaller surface-mount packages.
Today, analog switches and multiplexers are available in a wide variety of configurations,
options, etc., to suit nearly all applications. On-resistances less than 0.5 Ω, picoampere leakage
currents, signal bandwidths greater than 1 GHz, and single 1.8-V supply operation are now
possible with modern CMOS technology. Industrial products are also available which operate on±15 V supplies using Analog Devices' iCMOS® (industrial CMOS) process.
Although CMOS is by far the most popular IC process today for switches and multiplexers,
bipolar processes (with JFETs) and complementary bipolar processes (also with JFET capability)
are often used for special applications such as video switching and multiplexing where the highperformance characteristics required are not attainable with CMOS. Traditional CMOS switches
and multiplexers suffer from several disadvantages at video frequencies. Their switching time isgenerally not fast enough, and they require external buffering in order to drive typical video
loads. In addition, the small variation of the CMOS switch on-resistance with signal level (RON
modulation) can introduce unwanted distortion in differential gain and phase. Multiplexers basedon complementary bipolar technology offer better solutions at video frequencies—with obvious
power and cost increases above CMOS devices.

Rev.0, 10/08, WK

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CMOS SWITCH BASICS
The ideal analog switch has no on-resistance, infinite off-impedance and zero time delay, andcan handle large signal and common-mode voltages. Real CMOS analog switches meet none ofthese criteria, but if we understand the limitations of analog switches, most of these limitations
can be overcome.
CMOS switches have an excellent combination of attributes. In its most basic form, the
MOSFET transistor is a voltage-controlled resistor. In the "on" state, its resistance can be lessthan 1 Ω, while in the "off" state, the resistance increases to several hundreds of megohms, withpicoampere leakage currents. CMOS technology is compatible with logic circuitry and can bedensely packed in an IC. Its fast switching characteristics are well controlled with minimum
circuit parasitics.
MOSFET transistors are bilateral. That is, they can switch positive and negative voltages andconduct positive and negative currents with equal ease. A MOSFET transistor has a voltage
controlled resistance which varies nonlinearly with signal voltage as shown in Figure 1.

PMOS

NMOS
ALTERNATE SYMBOLS

Figure 1: MOSFET Switch ON-Resistance Versus Signal Voltage
The complementary-MOS process (CMOS) yields good P-channel and N-channel MOSFETs.
Connecting the PMOS and NMOS devices in parallel forms the basic bilateral CMOS switch of
Figure 2. This combination reduces the on-resistance, and also produces a resistance which
varies much less with signal voltage.

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MT-088
SWITCH
SWITCHDRIVER

Figure 2: Basic CMOS Switch Uses Complementary Pair to
Minimize RON Variation due to Signal Swings
Figure 3 shows the on-resistance changing with channel voltage for both N-type and P-typedevices. This nonlinear resistance can causes errors in dc accuracy as well as ac distortion. The
bilateral CMOS switch solves this problem. On-resistance is minimized, and linearity is also
improved. The bottom curve of Figure 3 shows the improved flatness of the on-resistancecharacteristic of the switch.

COMBINED TRANSFERFUNCTION

Figure 3: CMOS Switch ON-Resistance Versus Signal Voltage
The ADG8xx-series of CMOS switches are specifically designed for less than 0.5 Ω onresistance and are fabricated on a sub-micron process. These devices can carry currents up to 400
mA, operate on a single 1.8 V to 5.5 V supply (depending on the particular device), and are rated
over an extended temperature range of –40°C to +125°C. Typical on-resistance over temperatureand input signal level is shown in Figure 4.

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INPUT SIGNAL LEVEL - V

Figure 4: ON-Resistance Versus Input Signal for
ADG801/ADG802 CMOS Switch, VDD = +5 V
ERROR SOURCES IN THE BASIC CMOS SWITCH
It is important to understand the error sources in an analog switch. Many affect ac and dc
performance, while others only affect ac. Figure 5 shows the equivalent circuit of two adjacent
CMOS switches. The model includes leakage currents and junction capacitances.

Figure 5: Equivalent Circuit of Two Adjacent CMOS Switches

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DC errors associated with a single CMOS switch in the on state are shown in Figure 6. When theswitch is on, dc performance is affected mainly by the switch on-resistance (RON) and leakage
current (ILKG). A resistive attenuator is created by the RG-RON-RLOAD combination which
produces a gain error. The leakage current, ILKG, flows through the equivalent resistance of
RLOAD in parallel with the sum of RG and RON.
Not only can RON cause gain errors—which can be calibrated using a system gain trim—but its
variation with applied signal voltage (RON modulation) can introduce distortion—for which there
is no calibration. Low resistance circuits are more subject to errors due to RON, while highresistance circuits are affected by leakage currents. Figure 6 also gives equations that show how
these parameters affect dc performance.

Figure 6: Factors Affecting DC Performance for
ON Switch Condition: RON, RLOAD, and ILKG
When the switch is OFF, leakage current can introduce errors as shown in Figure 7. The leakage
current flowing through the load resistance develops a corresponding voltage error at the output.

Leakage current creates error voltage at VOUT equal to:
VOUT = ILKG × RLOAD

Figure 7: Factors Affecting DC Performance for
OFF Switch Condition: ILKG and RLOAD

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MT-088

Figure 8 illustrates the parasitic components that affect the ac performance of CMOS switches.
Additional external capacitances will further degrade performance. These capacitances affectfeedthrough, crosstalk and system bandwidth. CDS (drain-to-source capacitance), CD (drain-toground capacitance), and CLOAD all work in conjunction with RON and RLOAD to form the overall
transfer function.

Figure 8: Dynamic Performance Considerations:
Transfer Accuracy Versus Frequency

In the equivalent circuit, CDS creates a frequency zero in the numerator of the transfer function
A(s). This zero usually occurs at high frequencies because the switch on-resistance is small. The
bandwidth is also a function of the switch output capacitance in combination with CDS and theload capacitance. This frequency pole appears in the denominator of the equation.
The composite frequency domain transfer function may be re-written as shown in Figure 9 whichshows the overall Bode plot for the switch in the on state. In most cases, the pole breakpoint
frequency occurs first because of the dominant effect of the output capacitance CD. Thus, tomaximize bandwidth, a switch should have low input and output capacitance and low onresistance.
The series-pass capacitance, CDS, not only creates a zero in the response in the ON-state, it
degrades the feedthrough performance of the switch during its OFF state. When the switch is off,
CDS couples the input signal to the output load as shown in Figure 10.

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MT-088

Figure 9: Bode Plot of CMOS Switch Transfer
Function in the ON State

Figure 9: Bode Plot of CMOS Switch Transfer
Function in the ON StateOFF Isolation is Affectedby External R and C Load

Figure 10: Dynamic Performance Considerations: Off Isolation

Large values of CDS will produce large values of feedthrough, proportional to the input
frequency. Figure 11 illustrates the drop in OFF-isolation as a function of frequency. The
simplest way to maximize the OFF-isolation is to choose a switch that has as small a CDS as
possible.

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MT-088

Figure 11: Off Isolation Versus Frequency

Figure 12 shows typical CMOS analog switch OFF-isolation as a function of frequency for the
ADG708 8-channel multiplexer. From dc to several kilohertz, the multiplexer has nearly 90-dB
isolation. As the frequency increases, an increasing amount of signal reaches the output.
However, even at 10 MHz, the switch shown still has nearly 60 dB of isolation.

Figure 12: OFF-Isolation Versus Frequency for
ADG708 8-Channel Multiplexer

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Another ac parameter that affects system performance is the charge injection that takes place
during switching. Figure 13 shows the equivalent circuit of the charge injection mechanism.

VDD
VSS

Step waveforms of ± (VDD – VSS) are applied to CQ,
the gate capacitance of the output switches.

Figure 13: Dynamic Performance Considerations:
Charge Injection Model
When the switch control input is asserted, it causes the control circuit to apply a large voltagechange (from VDD to VSS, or vice versa) at the gate of the CMOS switch. This fast change involtage injects a charge into the switch output through the gate-drain capacitance CQ. The
amount of charge coupled depends on the magnitude of the gate-drain capacitance.
The charge injection introduces a step change in output voltage when switching as shown in
Figure 14. The change in output voltage, ΔVOUT, is a function of the amount of charge injected,
QINJ (which is in turn a function of the gate-drain capacitance, CQ) and the load capacitance, CL.

0V

Figure 14: Effects of Charge Injection on Output

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MT-088
Another problem caused by switch capacitance is the retained charge when switching channels.
This charge can cause transients in the switch output, and Figure 15 illustrates the phenomenon.
Assume that initially S2 is closed and S1 open. CS1 and CS2 are charged to –5 V. As S2 opens,the –5 V remains on CS1 and CS2, as S1 closes. Thus, the output of Amplifier A sees a –5V
transient. The output will not stabilize until Amplifier A's output fully discharges CS1 and CS2
and settles to 0 V. The scope photo in Figure 16 depicts this transient. The amplifier's transientload settling characteristics will therefore be an important consideration when choosing the right
input buffer.

–5V

Figure 15: Charge Coupling Causes Dynamic Settling Time
Transient When Multiplexing Signals

Figure 16: Output of Amplifier Shows Dynamic Settling Time
Transient Due to Charge Coupling

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Crosstalk is related to the capacitances between two switches. This is modeled as the CSS
capacitance shown in Figure 17.

Figure 17: Channel-to-Channel Crosstalk Equivalent
Circuit for Adjacent Switches
Figure 18 shows typical crosstalk performance of the ADG708 8-channel CMOS multiplexer.

Figure 18: Crosstalk Versus Frequency for ADG708 8-Channel Multiplexer
Finally, the switch itself has a settling time that must be considered. Figure 19 shows the
dynamic transfer function. The settling time can be calculated, because the response is a functionof the switch and circuit resistances and capacitances. One can assume that this is a single-pole

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MT-088
system and calculate the number of time constants required to settle to the desired systemaccuracy as shown in Figure 20.

Settling time is the time required for the switch output
to settle within a given error band of the final value.

Figure 19: Multiplexer Settling TimeRESOLUTION,# OF BITS

LSB (%FS)# OF TIMECONSTANTS

6

1.563

4.16

8

0.391

5.55

10

0.09776.93

120.02448.32

140.00619.70

160.0015311.09

180.0003812.48

200.000095

13.86

22

0.000024

15.25

Figure 20: Number of Time Constants Required to Settle to
1 LSB Accuracy for a Single-Pole System

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MT-088
APPLYING THE ANALOG SWITCH
Switching time is an important consideration in applying analog switches, but switching timeshould not be confused with settling time. ON and OFF times are simply a measure of the
propagation delay from the control input to the toggling of the switch, and are largely caused bytime delays in the drive and level-shift circuits (see Figure 21). The tON and tOFF values are
generally measured from the 50% point of the control input leading edge to the 90% point of theoutput signal level.

tON, tOFF
 tON and tOFF should not be confused with settling time.
 tON and tOFF are simply a measure of the propagation delay
from control input to operation of the analog switch. It is causedby time delays in the drive / level-shifter logic circuitry.
 tON and tOFF are measured from the 50% point of the control
input to the 90% point of the output signal level.

Figure 21: Applying the Analog Switch: Dynamic
Performance Considerations

We will next consider the issues involved in buffering a CMOS switch or multiplexer output
using an op amp. When a CMOS multiplexer switches inputs to an inverting summing amplifier,it should be noted that the on-resistance, and its nonlinear change as a function of input voltage,
will cause gain and distortion errors as shown in Figure 22. If the resistors are large, the switch
leakage current may introduce error. Small resistors minimize leakage current error but increase
the error due to the finite value of RON.

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MT-08810kΩ
10kΩ

ΔVSWITCH = ±10V

 ΔRON caused by ΔVIN , degrades linearity of VOUT relative to VIN.
 ΔRON causes overall gain error in VOUT relative to VIN .

Figure 22: Applying the Analog Switch: Unity
Gain Inverter with Switched Input
To minimize the effect of RON change due to the change in input voltage, it is advisable to put
the multiplexing switches at the op amp summing junction as shown in Figure 23. This ensures
the switches are only modulated with about ±100 mV rather than the full ±10 V—but a separate
resistor is required for each input leg.

10kΩ

10kΩ
10kΩ
10kΩ

10kΩ

ΔVSWITCH = ±100mV Switch drives a virtual ground.
 Switch sees only ±100mV, not ±10V, minimizes ΔRON .

Figure 23: Applying the Analog Switch:
Minimizing the Influence of ΔRON

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It is important to know how much parasitic capacitance has been added to the summing junction
as a result of adding a multiplexer, because any capacitance added to that node introduces phaseshift to the amplifier closed loop response. If the capacitance is too large, the amplifier may
become unstable and oscillate. A small capacitance, C1, across the feedback resistor may berequired to stabilize the circuit.

The finite value of RON can be a significant error source in the circuit shown in Figure 24. The
gain-setting resistors should be at least 1,000 times larger than the switch on-resistance toguarantee 0.1% gain accuracy. Higher values yield greater accuracy but lower bandwidth andgreater sensitivity to leakage and bias current.

A better method of compensating for RON is to place one of the switches in series with the
feedback resistor of the inverting amplifier as shown in Figure 25. It is a safe assumption that themultiple switches, fabricated on a single chip, are well-matched in absolute characteristics andtracking over temperature. Therefore, the amplifier is closed-loop gain stable at unity gain, since
the total feedforward and feedback resistors are matched.

1MΩ

1MΩ

 ΔRON is small compared to 1MΩ switch load.
 Effect on transfer accuracy is minimized.
 Bias current and leakage current effects are now very important.
 Circuit bandwidth degrades.

Figure 24: Applying the Analog Switch: Minimizing Effects
of ΔRON Using Large Resistor Values

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MT-088
RF
10kΩ

10kΩ
±10V
10kΩ
±10V
10kΩ
±10V

Figure 25: Applying the Analog Switch:Using "Dummy" Switch
in Feedback to Minimize Gain Error Due to ΔRON
The best multiplexer design drives the non-inverting input of the amplifier as shown in Figure
26. The high input impedance of the non-inverting input eliminates the errors due to RON.

Figure 26: Applying the Analog Switch: Minimizing the Influence of ΔRON
Using Non-Inverting Configuration
CMOS switches and multiplexers are often used with op amps to make programmable gain
amplifiers (PGAs). To understand RON's effect on their performance, consider Figure 27, a poor
PGA design. A non-inverting op amp has 4 different gain-set resistors, each grounded by aswitch, with an RON of 100-500 Ω. Even with RON as low as 25 Ω, the gain of 16 error would be
2.4%, worse than 8-bit accuracy! RON also changes over temperature, and from switch-to-switch.

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RF = 10kΩ
–625Ω

1.43kΩ

3.33kΩ

10kΩ

G = 16

G=8

G=4

G=2

VOUT
+

VIN

 Gain accuracy limited by switch's on-resistance RON
and RON modulation
 RON typically 1 - 500Ω for CMOS or JFET switch
 For RON = 25Ω, there is a 2.4% gain error for G = 16
 RON drift over temperature limits accuracy
 Must use very low RON switches

Figure 27: A Poorly Designed PGA Using CMOS Switches
To attempt "fixing" this design, the resistors might be increased, but noise and offset could thenbe a problem. The only way to improve accuracy with this circuit is to use relays, with virtually
no RON. Only then will the few mΩ of relay RON be a small error vis-à-vis 625 Ω.
It is much better to use a circuit insensitive to RON! In Figure 28, the switch is placed in series
with the inverting input of an op amp. Since the op amp input impedance is very large, the switch
RON is now irrelevant, and gain is now determined solely by the external resistors. Note—RON
may add a small offset error if op amp bias current is high. If this is the case, it can readily becompensated with an equivalent resistance at VIN.
VIN

+
VOUT
–
G=1

500Ω

G=2

1kΩ

1kΩ

 RON is not in series with gain setting resistors
 RON is small compared to input impedance Only slight offset errors occur due to bias
current flowing through the switches

Figure 28: Alternate PGA Configuration Minimizes the Effects of RON

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1-GHz CMOS SWITCHESThe ADG918/ADG919 are the first switches using a CMOS process to provide high isolationand low insertion loss up to and exceeding 1 GHz. The switches exhibit low insertion loss (0.8dB) and relatively high off isolation (37 dB) when transmitting a 1-GHz signal. In highfrequency applications with throughput power of +18 dBm or less at 25°C, they are a costeffective alternative to gallium arsenide (GaAs) switches. A block diagram of the devices areshown in Figure 29 along with isolation and loss versus frequency plots given in Figure 30.
ABSORPTIVE SWITCHREFLECTIVE SWITCH

Figure 29: 1-GHz CMOS 1.65-V to 2.75-V 2:1 Mux/SPDT Switches

ISOLATION (dB) VS. FREQUENCYLOSS (dB)VS. FREQUENCY

Figure 30: Isolation and Frequency Response of
AD918/AD919 1-GHz Switch

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The ADG918 is an absorptive switch with 50-Ω terminated shunt legs that allow impedance
matching with the application circuit, while the ADG919 is a reflective switch designed for use
where the terminations are external to the chip. Both offer low power consumption (<1 µA), tiny
packages (8-lead MSOP and 3 mm × 3 mm lead frame chip scale package), single-pin control
voltage levels that are CMOS/LVTTL compatible, making the switches ideal for wirelessapplications and general-purpose RF switching.
PARASITIC LATCHUP IN CMOS SWITCHES AND MUXES
Because multiplexers are often at the front-end of a data acquisition system, their inputs
generally come from remote locations—hence, they are often subjected to overvoltage
conditions. An understanding of the problem as it relates to CMOS devices is particularly
important. Although this discussion centers around multiplexers, it is germane to nearly all typesof CMOS parts.
Most CMOS analog switches are built using junction-isolated CMOS processes. A crosssectional view of a single switch cell is shown in Figure 31. Parasitic SCR (silicon controlled
rectifier) latchup can occur if the analog switch terminal has voltages more positive than VDD or
more negative than VSS. Even a transient situation, such as power-on with an input voltage
present, can trigger a parasitic latchup. If the conduction current is too great (several hundred
milliamperes or more), it can damage the switch.

–VSS

+VDD

Figure 31: Cross-Section of a Junction-Isolation CMOS Switch
The parasitic SCR mechanism is shown in Figure 32. SCR action takes place when either
terminal of the switch (source or the drain) is either one diode drop more positive than VDD or
one diode drop more negative than VSS. In the former case, the VDD terminal becomes the SCR
gate input and provides the current to trigger SCR action. In the case where the voltage is morenegative than VSS, the VSS terminal becomes the SCR gate input and provides the gate current. In
either case, high current will flow between the supplies. The amount of current depends on thecollector resistances of the two transistors, which can be fairly small.

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MT-088+VDD–VSS

Figure 32: Bipolar Transistor Equivalent Circuit for CMOS
Switch Shows Parasitic SCR Latch
In general, to prevent the latchup condition, the inputs to CMOS devices should never beallowed to be more than 0.3 V above the positive supply or 0.3 V below the negative supply.
Note that this restriction also applies when the power supplies are off (VDD = VSS = 0 V), andtherefore devices can latchup if power is applied to a part when signals are present on the inputs.
Manuracturers of CMOS devices invariably place this restriction in the data sheet table ofabsolute maximum ratings. In addition, the input current under overvoltage conditions should be
restricted to 5-30 mA, depending upon the particular device.
In order to prevent this type of SCR latchup, a series diode can be inserted into the VDD and VSS
terminals as shown in Figure 33. The diodes block the SCR gate current. Normally the parasitic
transistors Q1 and Q2 have low beta (usually less than 10) and require a comparatively large gate
current to fire the SCR. The diodes limit the reverse gate current so that the SCR is not triggered.
CR1
+VDD

CR2
–VSS
Diodes CR1 and CR2 block base current drive to Q1 and Q2
in the event of overvoltage at S or D.

Figure 33: Diode Protection Scheme for CMOS Switch
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If diode protection is used, the analog voltage range of the switch will be reduced by one VBE
drop at each rail, and this can be inconvenient when using low supply voltages.
As noted, CMOS switches and multiplexers can also be protected from possible overcurrent byinserting a series resistor to limit the current to a safe level as shown in Figure 34, generally lessthan 5-30 mA. Because of the resitive attenuator formed by RLOAD and RLIMIT, this method works
only if the switch drives a relatively high impedance load.
+VDD

CMOS SWITCHOR MUXRLIMITOUTPUT

INPUT
RLOAD

LIMIT OVERCURRENT TO 5-30mA–VSS

Figure 34: Overcurrent Protection Using External Resistor
A common method for input protection is shown in Figure 35 where Schottky diodes areconnected from the input terminal to each supply voltage as shown. The diodes effectively
prevent the inputs from exceeding the supply voltage by more than 0.3-0.4 V, thereby preventing
latchup conditions. In addition, if the input voltage exceeds the supply voltage, the input current
flows through the external diodes to the supplies, not the device. Schottky diodes can easily
handle 50-100 mA of transient current, therefore the RLIMIT resistor can be quite low.
+VDD

RLIMIT

CMOS SWITCHOR MUXOUTPUT

INPUT
RLOAD

–VSS

Figure 35: Input Protection Using External Schottky Diodes
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Most CMOS devices have internal ESD-protection diodes connected from the inputs to the
supply rails, making the devices less susceptible to latchup. However, the internal diodes begin
conduction at 0.6 V, and have limited current-handling capability, thus adding the external
Schottky diodes offers an added degree of protection. However, the effects of the diode leakage
and capacitance must be considered.
Note that latchup protection does not provide overcurrent protection, and vice versa. If both fault
conditions can exist in a system, then both protective diodes and resistors should be used.
Analog Devices uses trench-isolation technology to produce its LC2MOS analog switches. The
process reduces the latchup susceptibility of the device, the junction capacitances, increases
switching time and leakage current, and extends the analog voltage range to the supply rails.
Figure 36 shows the cross-sectional view of the trench-isolated CMOS structure. The buriedoxide layer and the side walls completely isolate the substrate from each transistor junction.
Therefore, no reverse-biased PN junction is formed. Consequently the bandwidth-reducing
capacitances and the possibility of SCR latchup are greatly reduced.

Figure 36: Trench-Isolation LC2MOS Structure
The ADG508F, ADG509F, ADG528F, ADG438F, and ADG439F are ±15V trench-isolated
LC2MOS multiplexers which offer "fault protection" for input and output overvoltages
between –40 V and + 55 V. These devices use a series structure of three MOSFETS in thesignal path: an N-channel, followed by a P-channel, followed by an N-channel. In addition,
the signal path becomes a high impedance when the power supplies are turned off. This
structure offers a high degree of latchup and overvoltage protection—at the expense ofhigher RON (~300 Ω), and more RON variation with signal level. For more details of thisprotection method, refer to the individual product data sheets.

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REFERENCES:
1.

Hank Zumbahlen, Basic Linear Design, Analog Devices, 2006, ISBN: 0-915550-28-1. Also available as
Linear Circuit Design Handbook, Elsevier-Newnes, 2008, ISBN-10: 0750687037, ISBN-13: 9780750687034. Chapter 7.

2.

Walt Kester, Analog-Digital Conversion, Analog Devices, 2004, ISBN 0-916550-27-3, Chapter 7. Also
available as The Data Conversion Handbook, Elsevier/Newnes, 2005, ISBN 0-7506-7841-0, Chapter 7.

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Information furnished by Analog Devices applications and development tools engineers is believed to be accurate
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