If anybody likes to keep this talk’s slides, please email me!

Roadmap ofultrafast energy-saving optical semiconductor devices
to Year 2025--- <speed, energy, size> estimates of optical Micro Processor Unit ---Yoshiyasu UENO
National Univ. of Electro-Communications (UEC)
Tokyo, Japan
42 d ssdm,
42nd
d TTokyo,
k
S
Sept.
t 22
22, 2010
1

Ultrafast Optical Logic Lab., UEC

Contents[[1]] Total energy
gy consumptions
pin ICT technologygy[2] Recent trends of optical-data-processing devices <speed, energy, size>[3] All-Optical gates: from principles to new potentials <speed, energy, size>[4] Crude estimates about “optical MPU” (long-term research)(first time, too, to our knowledge)

Co authors and Collaborations
Co-authors

2

Ultrafast Optical Logic Lab., UEC

[1] Impacts of ICT energy consumptions[1] Energy consumptions in ICT-related systems

Conventional Technol.
(electronic MPU’s)
Around 2005,
Clk freq. reached 3 GHz.
Nano-materials inside MPU’s are nearly melt.
（37 years of Moore’s law, IEEE 2008)

In Data
ata CeCenters
te s oof Goog
Google,e, Microsoft,c oso t, etc.
etc
4.0
3.0

Si l processor
Single2.0

Cost of DRAM

1.0
0.0

1980

1990

2000

2008

Calendar Year

Prrosessor clk speed (GHz)

Dual/
D
l/
Quad

saturating
speed

Nuclear Power-Station
S
1 GW / reactor
Clk freq.: ３ GHz, with similar MPU’s
Heat-energy dissipation: 10 kW / sever rackData-center energy: 20 MW / data center
We need ultrafast & energy-savingpTransistors
Opticalin future !

3

Ultrafast Optical Logic Lab., UEC

[1] Impacts of ICT energy consumptions

Prima
ary Energy Supply for generating
the aannual total electricity s
supply in th
he country ((EJ)

Primmary eneergy suppply, for eelectricityyElectric-energy consumptions, 1970-2006

1000.0

100.0

Japan

系列1

P.R. China

系列2

Japan

10.0

India

系列3

EU (15)

系列4

UK

UK

系列5

USA

系列6

10
1.0

W ld
World

系列7

0.1

19701970

1980

1990
2000 2010
2010
1990
Year
Yoshiyasu Ueno, February 2010*1)) Source: International Energy
gy Agencygy ((IEA),) Paris,Energy balances of OECD countries and non-OECD countries.
*2) 1 EJ= 1×1018 J.

Ultrafast Optical Logic Lab., UEC

[1] Impacts of ICT energy consumptions

Macro-scopic:

Primary Energy Supplies (sum of electricity and non-electricity), 2006

100

China

90
80

USA

Ratios of energy for electricity

EU

Japan

70
60
50
40
30
20
10
0

Japan

China

India

EU15

UK

USA

GDP’s (2006)
GDP (××109 USD, 200
06)

12,00010,000

8,000

USA

Chi
China

EU

Japan

6,000

Total Primary Enerrgy Supply (EJ, 2006)

Tottal Primary Enerrgy Supply (EJ, 2
2006)

Primary Energy Supplies

USAfor non-electricity

100

for electricity

90

incl.
Vehicles,Jets, etc.
of today

China

80

EU

70
60
50

Japan

40

43%

India

30

39%

20

Electric Vehicles,
next ??

36%
39%

10
0

Japan

China

India

EU15

UK

USA

4,000

*1) Source: International Energy Agency (IEA)(IEA), Paris
Paris,

2,000

Energy balances of OECD countries and non-OECD countries.
*2) 1 EJ= 1×1018 J.

0Japan China

India

EU15

UK

USA

Data Centers in USA consuming 1.5% of all electricity (D. Miller, Stanford).
not very large??  1.5%
1 5% correspondes to 10 nuclear reactors!!
 We need energy-saving devices.
Ultrafast Optical Logic Lab., UEC

[1] Impacts of ICT energy consumptions

Micro-scopic:

one origin of ICT-energy consumptions
Zetta

Tr-number times Clk-freq. has evolved
by a factor of 106×104= 1010 (in 40 years)

Tr・Clk Product

1.E+21

Tr number: 106
Clk freq.: 104

1 E+201.E+201.E+19Exa

Moore’s magic

1.E+18• FLOPS speed has increased by 1010.

1.E+17
1.E+16

Cray Jaguar,
IBM Roadrunner ->Peta

1.E+15

NEC-Sun Tsubame ->NEC Earth simulator ->1.E+14• MIPS speed has increased by 104, only,
without supported by Tr number. (reasonable)

1 E+13
1.E+13Tera

1.E+11

Pentium Pro(1996)

1.E+10Giga
Cray-1 ->• Already relying on parallel-processing MPU’s and software.
many-folded parallel-structures are probably pushing-up
electric-energy consumptions (and costs).
[hard to quantitatively characterize now,
now though.]though ]Core 2 Quad(2007)
Pen 4(2002)

1.E+12

1.E+0980386(1985)

1.E+088086(1978)

1.E+07? for 2010-2050: Increasing demands are

1.E+06
1.E
06
1.E+05

Y. Ueno, February 2010

FLOPS-type demands, or, MIPS-type demands ??

1.E+04

1960

1970

1980

1990

2000

2010

2020

Sources: FLOPS from measured results, MIPS from wikipedia.

no. of Trs. times clk freq. 10x every 4 yrs.
FLOPS 10x everyy 4 yyrs.
Instructions per sec. 10x every 7 yrs.

6

Ultrafast Optical Logic Lab., UEC

[1] Impacts of ICT energy consumptions
to move from electronics to optics: its famous weakness

Latest degrees
gof integrations
gfor optical-processingpp
g devices
Number of devices on one chip= 200 (Infinera, 2006)
 evolving
g steadily,y, driven byy industrial demands,,(in onne chip)# of opticall compone
ents

and approaching the number 2,300 in intel 4004 (1971).

200

2,300
Electronic processor
Intel 4004 (1971)

Eindhoven Univ. Technol., Netherlands

CIP Technologies, UK.

source:M K Smit (Eindhoven U
M.K.
U. Technol
Technol.),) IEEE-LEOSIEEE LEOS Annual 2008.
2008
7

Ultrafast Optical Logic Lab., UEC

[2] Optical-data-processing
Optical data processing “gates
gates and memories”
memories
All-Optical circuits w/ gates & memories
Y. Ueno, UEC, 2010

Optical data

Optical data

Optical data

Drive energy (electric dc-bias)

8

Ultrafast Optical Logic Lab., UEC

[2] Latest optical gates and memories[2] Optical-data-processing “gates and memories” <speed, energy, size>(2-1) Optical buffer memories (fundamental-research)

25Gb/s, 1pJ/bit, (30μm)2
M.T. Hill (Smit Gr., Eindhoven),
planar, ring-laser.

40-100Gb/s, 3pJ/bit, (10μm)2
T Katayama (Kawaguchi Gr
T.
Gr.),) 20092009,
Vertical, VCSEL.

40-160Gb/s, L= few mm long
E. Kehayas (Dorren Gr., Eindhoven)planar, coupled-gates.

photon-electron interactions

In bulk or MQW semiconductors
are used.

photonic-crystal gate
(FESTA, U. Tsukuba, AIST)
K. Asakawa et al., J. of Phys. 2006

9Ultrafast Optical Logic Lab., UEC

[2] Latest optical gates and memories[2] Optical-data-processing “gates and memories” <speed, energy, size>(2-2) All-optical gates (for practical signal-conversion, 2R/3R, demux, etc.)
SMZ-DISC scheme, with non-linear cross-phase modulation XPM

original-SMZ scheme, with XPM
Gate, 2000年

input

0.6

outputSignal (a.u.)

Signal (a.u.)Gate, 2006年

0.6

0.5
0.4
0.3
0.2

input

0.4

outputGate, 2009年

0.2

input

0.1
0.0

0.0
-50

0

Delay (ps)

+50

-50

0

output+50

Delay (ps)

168Gb/s, 2 pJ/bit, L≅ 1mm

S. Nakamura, Ueno, Tajima (NEC),wavelength-conversion

320Gb/s, 2.5 pJ/bit, L≅ 1mm
Y. Liu (Eindhoven), wavelength-conv.

640Gb/s
T. Hirooka (Tohoku U. & NEC), Demux.
10

Ultrafast Optical Logic Lab., UEC

[2] Latest optical gates and memories[2] Optical-data-processing “gates and memories” <speed, energy, size>(2-2) All-optical gate (fundamental-research in our univ. UEC, Tokyo)
Converter XOR
Converter,
XOR, AND
AND, 2R/3R
2R/3R, etc
etc.

SMZ-DISC scheme (XPM) in our group

Flip-Flop (Eindhoven, Tsukuba)
Clock oscillator (UEC)

Gate, 2008年
-20

-10

0

+10

+20

Gated waveform, 1540 nm

0100100010111…

1.0

0.5

0

Wavelength
g (nm)( )Intensity (dB
Bm/nm)

Intensityy (a. u.)

1.5

Oscillator, 2005-2008年

Distance in air, z (mm)

-75

-50

-25

0

+25

+50

Time (ps)200Gb/s, 3 pJ/bit, L≅ 1mm
Sakaguchi, et al. (Opt. Comm. 2009)

+75

1552

1550

1548

1546

-20

550 GHz
-40
-60
193.0

193.5

194.0

(160G-class) Optical frequency (THz)
Δ2ps/40GHz optical clock oscillator

Suzuki Nakamoto
Suzuki,Nakamoto, et alal. (CLEO2006(CLEO2006, NANO2008)11

Ultrafast Optical Logic Lab., UEC

[2] Latest optical gates and memories

200-Gb/s gated waveforms,

in the middle of our experimental studies
Jun Sakaguchi, et al., Opt. Comm. 2009.

good !!

Distance, z (mm)(accelerated)badly gated(too slow)
Data-pattern-induced
amplitude noise

Intensityy (a. u.)b tt
betterTime (ps)12

Ultrafast Optical Logic Lab., UEC

[2] Latest optical gates and memories

Clock oscillator (UEC)
COE-research: DISC-loop-type mode-locked pulse source

2-ps, 40-GHz pulse and comb generation, 2005-2006
R. Suzuki, et al., CLEO, Long Beach, USA, May 2006.

Original scheme from,Y. Ueno, et al., Appl. Phys. Lett. Oct. 2001

Optical-frequency-comb spectrum
0

25ps = 41GHz
1.0

13.5 dB

0.5

0.0-37.5 -25 -12.5

Intennsity (dBm)

SHG Inttensity (a. u..)Auto-correlation trace

-40
-60
60
-80
1546 1548 1550 1552 1554

0 +12.5 +25 +37.5

Wavelength (nm)0-50 -25

0

25

Delay (ps)

50

-20
-40

(3) Gloop> 0dB

-60
-80
1553

1554

1555

1556

Wavelength (nm)1557

Intensity (dBm
m)

0

10
0
-50 -25

0

25

Delay (ps)

-20
20
-40
-60
-80

50

1553

1554

1555

1556

1557

Wavelength (nm)(2) Gloop≥ 0dB
near threshold

Intensity (dBm)0100-50 -25

0

25

Delay (ps)

50

-20
-40
-60

(1) Gloop< 0dB

-80
1553

1554

1555

1556

Wavelength (nm)1557

Proof of principle (1), threshold behavior
0

(3)

-10

(2)
-20

(1)

7.2dB

-30
-10

+0 7
+0.7
0

+10

+20

Pulse loop gain, G loop [dB]

Proof of principle (2), linearly controlled pulse widths
Meeasuredof pulse,τ (pps)
Output width
pulse width,τ [ps]

10Outp
put optical power, Pout [dBm]20

measured t-f product, Δt⋅Δf= 0.53
(1.2 times that of a Gaussian pulse)0

Intensity (dBm)

Auto-correlation Signal
Intensity ( mV )Auto-correlation Siignal
Intensity ( mVV)

20

Auto-correlation Signal
Intensity ( mV )

Delay
y (p
(ps))
20

330pm = 41GHz

-20

6
5
4
3
2
1
0
0

1 2 3 4 5 6
MZI'stime
delay
time, ΔtΔt (ps)[ps]
Delayin DISC,solid curve: 10 GHz
dashedds ed curve:
cu ve: 400 GHz
G

Ultrafast Optical Logic Lab., UEC 13

fundamental research of “gates”

XOR, AND, 2R/3R, etc.

Flip-Flop (Eindhoven, Tsukuba)
Clock oscillator

Clock oscillator (UEC)

single-longitudinal-mode mode-locking, 2008
(with using high-Q etalon filter designed by JAE Japan)

precise only-one-mode lasing
precise,out of Δ10-MHz-spacing modes.
(Nakamoto, et al. OSA-NANO 2008)

Original features of this scheme of ours:
 500-GHz-BW
500 GH BW comb,b low
l power consumption,
ti integrationi t
ti possibility
ibilit (presently)(tl ) precise optical frequency, fopt (locked to external DFB source, fopt)
 precise repetition frequency, fR (locked to dielectric etalon’s FSR, fR) precisei combb envelopelshape,hfBW (locked(l k d to didielectricli MZI delay
d l time,
i
Δ)
Δt)
19

Ultrafast Optical Logic Lab., UEC

14

[2] Latest optical gates and memories

fairly-goodstatus of Modeling-research (optical gates)
Ueno et al., 2001-2002
ECOC, IE3 PTL, IEICE Trans.

from the hybrid-integrated SMZ device
Subject: about the useful correlation between
sensitive dependences of waveform and spectrum, on the optical phase bias, ΔΦB

wav
veformsin the log scale

meas.

meas.

calc.

C
Conclusion:l i
we’ll be able to feedback-control
the 160-Gb/s Demuxby monitoring the “supervisory” spectrum

Ultrafast Optical Logic Lab., UEC

[2] Latest optical gates and memories

fairly-goodstatus of Modeling-research (optical gates)
J. Sakaguchi et al., JJAP 2005 and 2008

subject: about one generic issue for DATA conv.
in the original DISC design
measuredwa
aveformss
in the log sca
alecalculated

To solve this, within DISC scheme, we need a kind of imbalance factor between the two interferometer arms.

Ultrafast Optical Logic Lab., UEC

[3] Physics of all-optical gates[3] Physics and potentials, of all-optical gates <speed, energy, size>
Quote: “All-optical semiconductor gate seems too complicated”--- Prof. Guifang LI, CREOL/UCF, USA.

Injection Current (mA)

Inversion-population
p p
semiconductors ((SOA’s))• nonlinear dependences → unsaturated gain G0, gain-saturation energy Psat, optical 3R/2R.
• linear dependences (many ways) → in gate speed, energy, size.

“not so complicated !!”Phase shiift, ΔΦ/πUeno et al., JOSAB 2002

42 GHz1.00

84 GHz0.50

168 GHz

0.10
10

50

100

500

Injectionjcurrent (mA)( )linear dependence
17

Ultrafast Optical Logic Lab., UEC

Physics ： Refractive-index modulations, etc.,[3] Physics of all-optical gates

due to excited-electron-hole-density modulations
K. Tajima (NEC 1993)
K
J. Sokoloff (Princeton 1993)

Holes

Optical output Z

Excited electrons in conduction band

Optical output X’

Optical pulses

Amplified pulses

SOA

Optical input X

Excited holes in valence band

Optical input Y

Step wise processes in generating optical outputs
Step-wise
outputs, Z and X’
X’.
t

and

optical acceleration Y or A

(1) Stimulated amplification of optical inputs X and Y.
⇒ (2) electron density is modulated (in materials).
⇒ (3) refractive index is modulated (in materials).
material’s rise time= 100 fs (fall time is slower).

Electrons⇒ (4) optical phase is modulated (in optical signal X or Y).
⇒ (5) modulated
d l t d lilights
ht are coherentlyhtl combined,bi d beforeb fgate’st ’ output.
t t⇒ (6) new optical outputs, Z and X’ are generated.

D i energy= dc-electron-injection
Drive
d l t
i j ti energy (d(dc-biasbi current)t)
18

Ultrafast Optical Logic Lab., UEC

faster than material-relax. speed,

Speed of gates[3] All-optical gates/ speed

after optically accelerating the material
Origin: R. Manning (BT), EL 1994

Holes
Optical pulses

Optical output Z
Optical output X’
Amplified pulses

SOA

Optical input X
Optical input Y
andoptical acceleration Y or At(seed cw or clk)

Electrons

Drive energy=
gy dc-electron energygy• For gates, this acceleration is equivalent to “fasterfaster materials”
materials• Energy consumption is equivalent to them, as well.

experimentally recognized.
(Sakaguchi, et al., Opt. Express 2007)19

Ultrafast Optical Logic Lab., UEC

[3] All-optical gates/ speed

Speed of gates, more simply

Sakaguchi, et al., Opt. Express 2007
Ueno et al.,al JOSAB 2002

Linear dependences after optical accelerationmaterial level: nonlinear dependence
Recovery rate, 1/τeff (GHz)

Principle of acceleration (in SOA)
|excited>(quasi fermionic)(quasi-fermionic)

B#3, Iop = 200 mA

50

measured
calculated

10
5-50 -40 -30 -20 -10

0+10 +20 +30

Holding-beam input power (dBm)gate performance: linear dependences show-up.
energy per bit ∝ speed (due to Joule loss)
helpful for designs and experiments||g>(transparent-state)

several other linearities::
optical phase mod. ∝ electron dens. mod.
opticalti l phasehmod.
d ∝ interactioni t
ti lengthlthoptical phase mod. ∝ electron-photon overlap

Electriic dc power consumption, POP(mW, @ΔΦΦNL=0.3 π)continuous pump(efficient)relax. due to stimulated-emission(with seed cw or clock)= optical acceleration

100

104

measuredB#4 1100 μm
B#3 500 μm

103

102
10

100

Bandwidth, B (GHz)

1000

20

Ultrafast Optical Logic Lab., UEC

[3] All-optical gates/ speed

Speed of gates  numbers at operating point (200Gb/s)
w/ nonlinear pol. rot.
S. Nakamura et al., Appl. Phys. Lett. 2001
J. Sakaguchi et al., Opt. Comm. May 2009

Principle of gate = electron-pumpHoles
Optical pulses

168G wavelength conversion (2000)

Amplified pulses

SOA

168G output data

168G input data
0.6

optical input (30fJ/bit)

0.6

acceleration (cw, 100 fJ/bit)

Signal (a.u.)t

Signal (aa.u.)

0.5
0.4
0.3
0.2

04
0.4
0.2

0.1

Electrons

dc-electron energy

0.0

0.0
-50

0

D l (ps)
Delay
( )

+50

-50

0

+50

D l ((ps))
Delaymaterial > 60ps  gate recovery < 6ps

・ electron
l t
consumption=ti
1×107 electrons/bit
・ electric-energy consumption= 3 pJ/bit
nearly-regardless of material’s speed (in this regime)
21

Ultrafast Optical Logic Lab., UEC

[3] all-optical speed  energy

Energy-efficiency of gates  new potentials in near-future (--2025)
300 pJ/bit
30 pJ/bit(previously)

Other institutes: packet-routing, buffer memories, integrated 2R-subsystem.
Our group (UEC): following directions (for energy-saving)・ blueblue-shift
shift filter  Nielsen et al.,al Opt.
Opt Express 2006

3 pJ/bit・ nonlinear-polarization rotation  Sakaguchi et al., Opt. Comm. 2009(present)・ spectral-synthesis
spectral synthesis scheme  going-on
going on (Nishida et alal., IEEE
IEEE-LEOS
LEOS 2009)（UEC-NICT collaboration, FY2007-）・ (non-deg. ->) degenerate-scheme  going-on[[freeee from
o popolarization-insensitivity
a at ose s t ty requirements]
equ e e ts]

not yet started but, from near-future

・ QW-band-engineering, for enhancing refractive-index mod.

0.3 pJ/bit(near future)(e.g., ACQW)

further• efficient pump (optical)• low-dim., surface plasmon, nano-photo100-fJ to 30-fJ(far future)
22

Ultrafast Optical Logic Lab., UEC

[3] All-optical gates/ size

Size of gates  interaction L, new potentials in near-future (--2025)
dc-electron pump (at present)energ ssupply
energyppl of 3 pJ/bit,
pJ/bit that is,is 1×107/bit of electrons,
electrons in interaction length
length= 1 mm

Volume density of excited electrons > 2×1018cm-3 ?
conduction band

exeprimentally: stock= relatively dilute (2×1017cm-3) ！

+800

Sakaguchi et al., Optics Express 2007 through present

+600
+400

dilute electrons+200(non-degenerate)

0

0

2.0

4.0

6.0

8.0

 flow (modulation)= less efficient (at present)

10.0

Density of electron states, N e(E) x10+17(cm-3.meV -1)

n= p= 2×1017cm-3

one of new potentials
conduction band

+1000

Energy, E-Ec (meeV)

Energy, E
E-Ec (meV)

+1000

+800
+600

dense electrons(degenerate)

+400
+200
0

0

2.0

4.0

6.0

Density of electron states, Ne(E) x10

8.0
+17

10.0
-3

-1

(cm .meV )10-times more electron densityy （2×1018cm-3 ）, 10-times shorter gate length (L= 100 μm)(Hetero-barrier energy seems not enough, at present)

Characterstic temperatures(AlGaInP/GaInP laser, 1993)23

Ultrafast Optical Logic Lab., UEC

[3] All-optical gates/ size

volume density of excited electrons (cm-3)
Plasmonics(very lossy)AlAu, Ag, Cu

Spintronics“half-metal”

Metalsvolume density
1E22

Mn: GaAs
Ti:Al2O3, Nd: YAG

1E20

super-dense electrons in III-V, 1018～1019 Semi-metals
1E18
III-V in all-optical gates (presently)
unexpectedly dilute, 2×1017

Er:SiO2
1E16

Semi-conductors
background levels(un-doped, intrinsic)
1E14
partially after Charles Kittel,
Introduction to Solid State Phys.,y1953-199624

Ultrafast Optical Logic Lab., UEC

[3] All-optical gates/ size

Super-high-density electron-confinement,with new hetero-barrier systems
futureHigher-Hetero(proposal)

at ppresent
50-GHz direct-mod.

pump laser

Direct-Mod(DR laser)

0 98 μm
0.98

presentlyBanddgap En
nergy, Eg (eV)

2.5

1.5
1.0
0.5

GaAs/AlGaInP(920 meV)

InGaAs/AlGaAs

all-optical’s

2.00.87 μm

1.31 μm1.55 μμm

1.31 μμm

InGaAs/InP

InGaAsP/InP(550 meV)(400 meV)

AlGaInAs/InP(750 meV)(760 meV)hetero-barrier
920 meV(= kBT× 35)

550 meV*)) 伝導帯の状態密度もやや増加する。
そして、電流注入⇔光注入を、分離。

00
0.0
25

Ultrafast Optical Logic Lab., UEC

[4] Optical MPU near 2025

[4] Optical micro-processor, near Year 2025
near-future <speed=300G, energy=0.3pJ/bit, size(interaction)= 100μm>

Optical processor

Electronic
Specification

intel 4004

Present

Near Future

Demo Year

Year 1971

Year 2000-2010
2000 2010

Year 2025

500 kb/s

200-300 Gb/s

300 Gb/s

3 10 pJJ /bi
3-10/bit/gate/

0 3 pJJ /bi
0.3/bit/gate
/

Speed
E
Energy
(per
(
bit)
bi )
Size (per gate)
Number of gates (per chip)2

70×70 μm

1,000×3,000 μm

500×500 μm(w/ 100-μm interaction)

2,300 transisters

several2,300 gates22(6 chips on 3-inch wafer)
Energy dissipation (per chip)

200 Watt

Optical processor 4004
26

Ultrafast Optical Logic Lab., UEC

[4] Optical MPU near 2025

Relative performance of optical-processor 4004
Zetta

Tr・Clk Product

1.E+21
1 E+201.E+201.E+19Exa

1.E+181.E+17

Cray Jaguar,
IBM Roadrunner ->1.E+16Peta

1.E+15

NEC-Sun Tsubame ->NEC Earth simulator ->1.E+14Tera

intel 4004
(1971)

1.E+12

Core 2 Quad(2007)

1.E+11Pen 4(2002)

1 E+13
1.E+13

Pentium Pro(1996)

1.E+10Giga
Cray-1 ->1.E+0980386(1985)

1.E+088086(1978)

1.E+07
1.E+06
1.E
06
1.E+05

Y. Ueno, February 2010

1.E+04

1960

1970

1980

1990

2000

2010

2020

出典： FLOPSは市販PC計測結果、MIPSはwikipedia資料。

Earlier statements:• already relying on parallel-processing structures,
which are probably pushing-up
their electric-energy
electric energy consumptions.
consumptions• Increasing demands in 2010-2050 are
FLOPS-type demands or MIPS-type demands??
no. of Trs. times clk freq. 10x every 4 yrs.
FLOPS 10x every 4 yrs.
Instructions per sec. 10x every 7 yrs.

27

Ultrafast Optical Logic Lab., UEC

[4] Optical MPU near 2025

Relative performance of optical-processor 4004
Zetta

Tr・Clk Product

1.E+21
1 E+201.E+20Exa

1.E+19Optical processor (estim.)

1.E+18alternative to Moore’s law

number-integration

1.E+17

Cray Jaguar,
IBM Roadrunner ->1.E+16Peta

1.E+15

NEC-Sun Tsubame ->NEC Earth simulator ->1.E+14intel 4004
(1971)

1.E+12

Core 2 Quad(2007)

1.E+11Pen 4(2002)

1 E+13
1.E+13

Tera

Tr・Clk matches to Pentium Pro(1996)

Pentium Pro(1996)

1.E+10Giga
Cray-1 ->(M)IPS matches to Core 2 quad (2007).

1.E+09FLOPS will be weak.

80386(1985)

1.E+08

Power consumption: 200 Watts

8086(1978)

1.E+07
1.E+06
1.E
06
1.E+05

Y. Ueno, February 2010

1.E+04

1960

1970

1980

1990

2000

2010

2020

出典： FLOPSは市販PC計測結果、MIPSはwikipedia資料。

no. of Trs. times clk freq. 10x every 4 yrs.
FLOPS 10x every 4 yrs.
Instructions per sec. 10x every 7 yrs.

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Ultrafast Optical Logic Lab., UEC

[4] Optical MPU near 2025

sample-spec. numbers of optical-80386

unit
Hz

1
2

Clk
Tr
Clk*Tr
Clk*Tr (relative)

3
4

Flops
(M)IPS, measured and estimated(M)IPS (relative)

5

ppower consumption
p

Watt

6

energy / instructionenergy / instructionenergy / instruction (relative)

7

energy / clk
energy / clk
energy / clk (relative)

250×250μm2 o-Tr
o-Tr’ss
on 6” GaAs wafer

e-80386e-Core2_quad

optical 80386(32bit)(32bit/64bit)(32bit)

1985

2007

2025

1.20E+07
275 000
275,000
3.30E+12
6.35E-07

2.60E+09
2 000 000 000
2,000,000,000
5.20E+18
1.00E+00

3.00E+11
275 000
275,000
8.25E+16
1.59E-02

11.2E
2E+05
05
1.10E+07
1.83E-04

44.0E
0E+10
10
6.00E+10
1.00E+00

380

2.00E+04

J
fJ

2.73E-07
2.73E+08

1.33E-09
1.33E+06
1

7.27E-08
7.27E+07
5.45E+01

J
fJ

2.50E-07
2.50E+08

3.08E-08
3.08E+07
1

6.67E-08
6.67E+07
2.17E+00

2.75E+11
4.58E+00

20 kW

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Ultrafast Optical Logic Lab., UEC

[4] Optical MPU near 2025

optical-processor 80386 (with 300,000 gates)

advantage of serial-processor
serial processor
latency, synchro issues  1/100 or lessserial-processor

programming costs, risks  1/100 or less

optical-80386
i l 80386 (estim.)

1.E+13 technical efficiency  100x / 15 yrs

parallel
1.E+12

Core2-quad• Clk: 100x(2007)
1.E+11• MIPS: increases

e-80386

1.E+10• energy per clock: comparable (70 nJ/clk)(1985)( ll relative(alll ti tto C
Core2-quad)2d)

1.E+09c

1.E+081.E+07

1.E+06

Possible to integrate??

1.E+05

1960

1980
1980

2000
2000

Opto-electronics history
Q
Quantum-electronicstl t i hihistory
t

2020
2020

2040
2040

250×250μm2 o-Tr’s

Previously,

on 6” GaAs wafer

Tr number×Clk: 100x / 8 yrs⇒ 275,000 Tr’s (=80386)

FLOPS 100x / 8 yrs
MIPS 100x / 15 yrs

30

Ultrafast Optical Logic Lab., UEC

If anybody likes to keep this talk’s slides, please email me!

Summary (ssdm 2010)• Impacts of ICT-related energy consumptions
e.g.:
g energy
gy supply
pp y to Data centers in USA: 10 nuclear reactors
heat energy from one server rack: 20-kW level.
many-folded parallel-data-processes will the best for all applications, thru. 2050 ?
• <speed, energy, size> of all-optical gates, at present: <200G, 3 pJ/bit, length, 1 mm>• <speed, energy, size>, 2nd or 3rd generation:<300G, 0.3 pJ, 250 μm2>

• in Materials Research (semi-classical quantum):
optical acceleration (incl. gate scheme),
electron-photon interaction (little studied),higher-density excitations (w/ larger hetero-barrier).
• optical-4004:
ti l 4004 MIPS
MIPS, comparable
bl tto CCore22 quad.
d El
Electrict i energy, 200W
200W.
• optical-80386: 300,000 gates. Energy per clk, comparable to Core2 quad.
(this will probably save energy and costs, for a group of serial-process-oriented tasks.)an alternative to 40-year-long Moore’s law
31

Ultrafast Optical Logic Lab., UEC

Thanks to Co-authors and Collaborations
Co authors:
Co-authors:
Jun Sakaguchi, PhD course, UEC
Rei Suzuki, master course, UEC
Takashi Ohira, master course, UEC
Ryoichi Nakamoto, master course, UEC
Fellran Salleras, postdoc, UEC (from ETH, Laussanne)
Mads L. Nielsen,, visiting
g researcher from Technical Univ. Denmark ((DTU))
Kohsuke Nishimura, KDDI Labs.
Naoya Wada and Satoshi Shinada, NICT Labs.
and several more.

Collaboration:
Jesper Mork, Technical Univ. Denmark (DTU)
Juerg Leuthold, Karlsruhe Univ.
Kiyoshi Asakawa, NIMS (Univ. Tsukuba)
Shigeru Nakamura, NEC Labs.
Harm Dorren, COBRA, Eindhoven Univ. Technology
Jian Wu, Beijing Univ. Posts and Telecoms (BUPT)
K.V. Reddy, Pritel Inc., Chicago USA
Alistair Poustie, CIP Technologies, UK, and several more institutes.
32

Ultrafast Optical Logic Lab., UEC