PDTB123YU

50 V, 500 mA PNP resistor-equipped transistor
8 April 2024

Product data sheet

1. General description
PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device(SMD) plastic package.
NPN complement: PDTD123YU

2. Features and benefits
••
•
•
•
•
••

500 mA output current capability
Reduces pick and place costs
Built-in bias resistors±10 % resistor ratio tolerance
Simplifies circuit design
Reduces component countHigh temperature applications up to 175 °C
AEC-Q101 qualified

3. Applications•••

Cost-saving alternative for BC807 series in digital applications
Control of IC inputs
Switching loads

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

MinTypMax

Unit

VCEO

collector-emitter
voltageopen base---50

VIO

output current---500mA

R1

bias resistor 1 (input)

1.54

2.2

2.86

kΩ

R2/R1

bias resistor ratio

4.1

4.55

5

Tamb = 25 °C

PDTB123YU

Nexperia

50 V, 500 mA PNP resistor-equipped transistor

5. Pinning information
Table 2. Pinning information
PinSymbol
Description
1Iinput (base)2G

GND (emitter)3O

output (collector)

Simplified outline

Graphic symbol

3OI

R1R2

12

SC-70 (SOT323)

GNDsym003

6. Ordering information
Table 3. Ordering information
Type numberPackage
PDTB123YU

NameDescription

VersionSC-70

plastic, surface-mounted package; 3 leads; 1.3 mm pitch;
2 mm x 1.25 mm x 0.95 mm body

SOT3237. Marking
Table 4. Marking codes
Type number

Marking code[1]

PDTB123YU

ZK%[1]% = placeholder for manufacturing site code

PDTB123YU

Product data sheet

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Nexperia

50 V, 500 mA PNP resistor-equipped transistor

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

MinMaxUnit

VCBO

collector-base voltage

open emitter

--50

VVCEO

collector-emitter voltage

open base

--50

V

VEBO

emitter-base voltage

open collector

--5V

VI

input voltage

-12

5VIO

output current--500mAPtot

total power dissipation

Tamb ≤ 25 °C[1]-300mWTamb ≤ 25 °C[2]-425mW

Tj

junction temperature-175°C

Tambambient temperature

-55

175°C

Tstg

storage temperature

-55

175°C

[1]
[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
aaa-012426

500
Ptot
(mW)

(1)

400(2)

300

200

100

0-75

25125

Tamb (°C)

225(1) FR4 PCB, 4-layer copper, standard footprint(2) FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig. 1.

Power derating curves

PDTB123YU

Product data sheet

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Nexperia

50 V, 500 mA PNP resistor-equipped transistor

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter
Rth(j-a)[1][2]

Conditions

thermal resistance from in free air
junction to ambient

MinTypMax

Unit[1]--500K/W[2]--353

K/W

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
103
Zth(j-a)(K/W)

aaa-012062

duty cycle = 1
0.75

102

0.33
0.1

100.02

10

10-1
10-5

0.5
0.2
0.05
0.01

10-4

10-3

10-2

10-1

1

10102

tp (s)

103

FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig. 2.

Transient thermal impedance from junction to ambient as a function of pulse duration for SOT323/SC-70;
typical values
aaa-012063

103
Zth(j-a)(K/W)

duty cycle = 10.75

102

0.5
0.33
0.2
0.1
0.05

100.02

110-5

0.01

010-4

10-3

10-2

10-1

110102tp (s)

103

FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Fig. 3.

Transient thermal impedance from junction to ambient as a function of pulse duration for SOT323/SC-70;
typical values

PDTB123YU

Product data sheet

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Nexperia

50 V, 500 mA PNP resistor-equipped transistor

10. Characteristics
Table 7. Characteristics
SymbolParameterConditions

MinTypMax

UnitICBOVCB = -40 V; IE = 0 A; Tamb = 25 °C---100nA

VCB = -50 V; IE = 0 A; Tamb = 25 °C---100nA

ICEO

collector-emitter cut-off VCE = -50 V; IB = 0 A; Tamb = 25 °C
current---0.5µA

IEBO

emitter-base cut-offcurrent

VEB = -5 V; IC = 0 A; Tamb = 25 °C---0.65mAhFE

DC current gain

VCE = -5 V; IC = -50 mA; Tamb = 25 °C70--VCEsat

collector-emittersaturation voltage

IC = -50 mA; IB = -2.5 mA; Tamb = 25 °C---100mV

VI(off)off-state input voltage

VCE = -5 V; IC = -100 µA; Tamb = 25 °C

-0.4

-0.65

-1VVI(on)on-state input voltage

VCE = -0.3 V; IC = -20 mA; Tamb = 25 °C-0.5-1-1.4VR1

bias resistor 1 (input)

Tamb = 25 °C

1.54

2.2

2.86

kΩ

R2/R1

bias resistor ratio

4.1

4.55

5Cc

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C-11-pF

fTtransition frequency

VCE = -5 V; IC = -50 mA; f = 100 MHz;
Tamb = 25 °C-140-MHz[1]

Characteristics of built-in transistor.

collector-base cut-off
current

006aaa357

103

[1]

aaa-012632

-10-1

(1)

hFE

(1)

(2)

(2)

VCEsat
(V)

(3)

102

(3)

10

1- 10- 1-1- 10- 102

IC (mA)-10-2- 103

VCE = -5 V
(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −40 °C
Fig. 4.

Product data sheet-10-102IC (mA)-103

IC/IB = 20
(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = -40 °C

DC current gain as a function of collectorcurrent; typical values

PDTB123YU-1Fig. 5.

Collector-emitter saturation voltage as afunction of collector current; typical values

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Nexperia

50 V, 500 mA PNP resistor-equipped transistor
006aaa359- 10VI(on)(V)

006aaa360- 10VI(off)
(V)
(1)

(1)

(2)

- 10- 1- 10- 1

Fig. 6.

(2)

(3)

-1

(3)

-1-1- 102

- 10

IC (mA)- 103- 10- 1- 10- 1

-1IC (mA)- 10

VCE = -0.3 V(1) Tamb = -40 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

VCE = -5 V
(1) Tamb = -40 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

On-state input voltage as a function of collector Fig. 7.
current; typical values

Off-state input voltage as a function of collector
current; typical values

aaa-012627-0.5IC(A)Cc(pF)-2.55-2.3-0.4

aaa-012637

40-2.830-2.05-1.8-0.3-1.55
20-1.3-1.05-0.2-0.8-0.1

010IB = -0.55 mA

0-1-2-3-4

VCE (V)

0-5

Tamb = 25 °C
Fig. 8.

Collector current as a function of collectoremitter voltage, typical values

PDTB123YU

Product data sheet

0-10-20-30-40-50
VCB (V)f = 1 MHz
Tamb = 25 °C
Fig. 9.

Collector capacitance as a function of collectorbase voltage; typical values

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Nexperia

50 V, 500 mA PNP resistor-equipped transistor
aaa-012064

103
fT
(MHz)
102

10

1-10-1-1-102-10IC (mA)

-103

Tamb = 25 °C
VCE = -5 V
Fig. 10. Transition frequency as a function of collector current; typical values of built-in transistor

11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.

12. Package outline
2.2
1.8

1.1
0.8
0.45
0.15

3

2.2 1.35
2.0 1.15

12
1.3

0.4
0.3

0.25
0.10

Dimensions in mm04-11-04

Fig. 11. Package outline SC-70 (SOT323)

PDTB123YU

Product data sheet

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Nexperia

50 V, 500 mA PNP resistor-equipped transistor

13. Soldering
2.65
1.85
1.325
solder landssolder resist

22.35

0.6(3×)3solder paste

1.3

occupied area

0.5(3×)

1Dimensions in mm
0.55(3×)sot323_fr

Fig. 12. Reflow soldering footprint for SC-70 (SOT323)
4.6
2.575
1.425(3×)
solder lands
solder resist
occupied area
1.8

3.65 2.1
0.9(2×)

Dimensions in mm
preferred transport
direction during soldering

sot323_fw

Fig. 13. Wave soldering footprint for SC-70 (SOT323)

PDTB123YU

Product data sheet

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Nexperia

50 V, 500 mA PNP resistor-equipped transistor

14. Revision history
Table 8. Revision history
Data sheet ID
Release date

Data sheet status

Change notice

Supersedes

PDTB123YU v.220240408

Product data sheet-

PDTB1XXXU_SER v.1

Modifications:•Family data sheet reduced to single type data sheet.

PDTB1XXXU_SER v.1 20140506

PDTB123YU

Product data sheet

Product data sheet-All information provided in this document is subject to legal disclaimers.

8 April 2024-

© Nexperia B.V. 2024. All rights reserved

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Nexperia

50 V, 500 mA PNP resistor-equipped transistor
equipment, nor in applications where failure or malfunction of an Nexperia
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no liability for inclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.

15. Legal information
Data sheet status
Document status[1][2]

Productstatus [3]DefinitionQuick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affect
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Suitability for use in automotive applications — This Nexperia producthas been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted tobe suitable for use in life support, life-critical or safety-critical systems orPDTB123YU

Product data sheet

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PDTB123YU

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50 V, 500 mA PNP resistor-equipped transistor

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................15. Pinning information......................................................26. Ordering information....................................................27. Marking.......................................................................... 2
8. Limiting values............................................................. 39. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information.......................................................... 712. Package outline.......................................................... 713. Soldering..................................................................... 8
14. Revision history..........................................................915. Legal information......................................................10© Nexperia B.V. 2024. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 8 April 2024

PDTB123YU

Product data sheet

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