DISCRETE SEMICONDUCTORSDATA SHEETPDTA144W series
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Product data sheet
Supersedes data of 2004 Mar 23

2004 Aug 05

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

FEATURESQUICK REFERENCE DATA

• Built-in bias resistors

SYMBOL• Simplified circuit design

VCEO• Reduction of component count• Reduced pick and place costs.
APPLICATIONSPARAMETERTYP.

MAX.

UNIT

collector-emitter
voltage−−50V

IO

output current (DC)−−100mA

R1

bias resistor

47−kΩ

R2bias resistor

22−kΩ• General purpose switching and amplification• Inverter and interface circuits

DESCRIPTION• Circuit driver.

PNP resistor-equipped transistor (see “Simplified outline,symbol and pinning” for package details).

PRODUCT OVERVIEWPACKAGETYPE NUMBER

MARKING CODENPN COMPLEMENTPHILIPSEIAJ

PDTA144WE

SOT416SC-75

5D

PDTC144WE

PDTA144WEF

SOT490SC-89

2E

PDTC144WEF

PDTA144WKSOT346SC-59

46

PDTC144WKPDTA144WM

SOT883

SC-101

F8

PDTC144WM

PDTA144WS

SOT54 (TO-92)

SC-43

TA144W

PDTC144WS

PDTA144WT

SOT23−*43(1)PDTC144WT

PDTA144WU

SOT323SC-70*28(1)

PDTC144WU

Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.

2004 Aug 05

2

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

SIMPLIFIED OUTLINE, SYMBOL AND PINNINGPINNINGTYPE NUMBERSIMPLIFIED OUTLINE AND SYMBOLPDTA144WS
handbook, halfpage

2
R1

1PIN

DESCRIPTION

1base

2

collector

3emitter

1base

2emitter

3collector

1base

2emitter

3collector

12

R233
MAM338PDTA144WE
PDTA144WEF
PDTA144WK

handbook, halfpage

33R1

PDTA144WT

1PDTA144WU

R2122Top view

MDB271

PDTA144WM
handbook, halfpage

3
R1231R2

12
Bottom view
MDB267

2004 Aug 05

3

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

ORDERING INFORMATIONPACKAGETYPE NUMBER
NAME

DESCRIPTIONVERSIONPDTA144WE−plastic surface mounted package; 3 leadsSOT416

PDTA144WEF−

plastic surface mounted package; 3 leads

SOT490

PDTA144WK−

plastic surface mounted package; 3 leads

SOT346

PDTA144WM−

leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.5 mm

SOT883

PDTA144WS−

plastic single-ended leaded (through hole) package; 3 leads

SOT54

PDTA144WT−

plastic surface mounted package; 3 leads

SOT23

PDTA144WU−

plastic surface mounted package; 3 leads

SOT323

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOLPARAMETERCONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−50

V

VCEO

collector-emitter voltage

open base

−−50V

VEBO

emitter-base voltage

open collector

−−10V

VI

input voltage
positive−+10V

negative

−

−40

V

IO

output current (DC)−−100mAICM

peak collector current−−100mA

Ptot

total power dissipation

Tamb ≤ 25 °C;

SOT54

note 1−

500mW

SOT23

note 1−250mW

SOT346note 1−250mW

SOT323

note 1−200mW

SOT416note 1−150mW

SOT490notes 1 and 2−250mWSOT883

notes 2 and 3−250mW

Tstg

storage temperature−65+150°C

Tj

junction temperature−150°C

Tamb

operating ambient temperature−65+150°CNotes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.

2004 Aug 05

4

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

THERMAL CHARACTERISTICSSYMBOLPARAMETER

Rth(j-a)

CONDITIONSVALUEUNIT

Tamb ≤ 25 °C

thermal resistance from junction to ambient
SOT54

note 1250

K/W

SOT23

note 1500

K/W

SOT346note 1500

K/W

SOT323

note 1625

K/W

SOT416note 1830

K/W

SOT490notes 1 and 2500

K/W

SOT883notes 2 and 3500

K/W

Note
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions.; FR4 with 60 μm copper strip line.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOLPARAMETERCONDITIONSMIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −50 V; IE = 0 A−−−100nA

ICEO

collector-emitter cut-off current

VCE = −30 V; IB = 0 A−−−1μA

VCE = −30 V; IB = 0 A; Tj = 150 °C−−−50μA
μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0 A−−−110hFE

DC current gain

VCE = −5 V; IC = −5 mA

60−−VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA−−−150mV

Vi(off)input-off voltage

IC = −100 μA; VCE = −5 V−−1.7−1.2VVi(on)input-on voltage

IC = −2 mA; VCE = −0.3 V−4−2.7−VR1

input resistor

334761kΩ

R2-------R1resistor ratio

0.37

0.47

0.57

Cccollector capacitance−−3

2004 Aug 05

IE = ie = 0 A; VCB = −10 V;
f = 1 MHz5pF

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

PACKAGE OUTLINES
Plastic single-ended leaded (through hole) package; 3 leads

SOT54cEdA

Lb1
e12De3b1

L10

2.55 mmscale

DIMENSIONS (mm are the original dimensions)
UNITAbb1cDdE

mm

5.2
5.0

0.48
0.40

0.66
0.55

0.45
0.38

4.8
4.4

1.7
1.4

4.2
3.6

e2.54

e1

L

L1(1)

1.27

14.5
12.7

2.5max.

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54

2004 Aug 05

REFERENCES
IEC

JEDEC

JEITA

TO-92

SC-43A

6EUROPEAN
PROJECTION

ISSUE DATE04-06-28
04-11-16

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

Plastic surface-mounted package; 3 leads

SOT23DEBAX

HEv M A

3QA
A1

12
e1

bp

cw M BLpe
detail X

0

12 mmscale

DIMENSIONS (mm are the original dimensions)
UNIT

A

A1
max.

bpcDEee1HE

LpQvw

mm

1.1
0.9

0.1

0.48
0.38

0.15
0.09

3.0
2.8

1.4
1.2

1.9

0.95

2.5
2.1

0.45
0.15

0.55
0.45

0.2

0.1OUTLINEVERSION
SOT23

2004 Aug 05

REFERENCES
IEC

JEDEC

JEITA

EUROPEAN
PROJECTION

ISSUE DATE
04-11-04
06-03-16

TO-236AB

7

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

Plastic surface-mounted package; 3 leads

SOT346E
DA

B

X

HEv M A

3Q

A
A11c

2
e1

bp

Lpw M Bedetail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNIT

A

A1bpcDEee1HE

LpQvw

mm1.3
1.00.10.013

0.500.35

0.26
0.10

3.1
2.7

1.7
1.3

1.9

0.95

3.0
2.5

0.6
0.2

0.33
0.23

0.2

0.2

OUTLINE
VERSION
SOT346

2004 Aug 05

REFERENCES
IEC

JEDEC

JEITA

TO-236SC-59A

8EUROPEAN
PROJECTION

ISSUE DATE
04-11-11
06-03-16

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

Plastic surface-mounted package; 3 leads

SOT323DE

B

AX

HEyv M A

3Q

A

A1c12e1bp

Lpw M Bedetail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNITA

A1max

bpc

DEee1HE

LpQv

w

mm

1.1
0.8

0.1

0.4
0.3

0.25
0.10

2.2
1.8

1.35
1.15

1.3

0.65

2.2
2.0

0.45
0.15

0.23
0.13

0.2

0.2

OUTLINE
VERSION
SOT323

2004 Aug 05

REFERENCES
IEC

JEDEC

JEITA
SC-70

9EUROPEAN
PROJECTION

ISSUE DATE
04-11-04
06-03-16

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

Plastic surface-mounted package; 3 leads

SOT416DEB

AXHEv M A

3QA

1A12
e1c

bp

w M B
Lpedetail X

00.5

1 mmscale

DIMENSIONS (mm are the original dimensions)
UNIT

A

A1max

bpc

DEee1HE

LpQv

w

mm

0.95
0.60

0.1

0.30
0.15

0.25
0.10

1.8
1.4

0.9
0.7

10.5

1.75
1.45

0.45
0.15

0.23
0.13

0.2

0.2

OUTLINE
VERSION
SOT416

2004 Aug 05

REFERENCES
IEC

JEDEC

JEITA
SC-75

10EUROPEAN
PROJECTION

ISSUE DATE
04-11-04
06-03-16

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

Plastic surface-mounted package; 3 leads

SOT490DEB

AX

HEv M A

3A1c2e1

bpw M B

Lpedetail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNIT

A

bpc

DEee1

HE

Lpv

w

mm0.8
0.6

0.33
0.23

0.2
0.1

1.7
1.5

0.95
0.75

1.0

0.5

1.7
1.5

0.5
0.3

0.1

0.1

OUTLINE
VERSION
SOT4902004 Aug 05

REFERENCES
IEC

JEDEC

JEITA
SC-89

11EUROPEAN
PROJECTION

ISSUE DATE
05-07-28
06-03-16

NXP SemiconductorsProduct data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm

LSOT883

L12b3eb1

1e1

AA1ED

00.51 mmscale
DIMENSIONS (mm are the original dimensions)
UNIT

A (1)

A1max.

bb1

DEee1

L

L1

mm

0.50
0.46

0.03

0.20
0.12

0.55
0.47

0.62
0.55

1.02
0.95

0.35

0.65

0.30
0.22

0.30
0.22Note
1. Including plating thickness
OUTLINE
VERSIONSOT883

2004 Aug 05

REFERENCES
IEC

JEDEC

JEITA
SC-10112EUROPEAN
PROJECTION

ISSUE DATE
03-02-05
03-04-03

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ

PDTA144W series

DATA SHEET STATUS
DOCUMENTSTATUS(1)PRODUCTSTATUS(2)Objective data sheet

Development

This document contains data from the objective specification for productdevelopment.

Preliminary data sheet

Qualification

This document contains data from the preliminary specification.

Product data sheet

Production

This document contains the product specification.

DEFINITION

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet atURL http://www.nxp.com.
DISCLAIMERS

above those given in the Characteristics sections of thisdocument is not implied. Exposure to limiting values forextended periods may affect device reliability.

General ⎯ Information in this document is believed to beaccurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completenessof such information and shall have no liability for theconsequences of use of such information.

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products are sold subject to the general terms andconditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including thosepertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between informationin this document and such terms and conditions, the latter
will prevail.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time andwithout notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell productsthat is open for acceptance or the grant, conveyance orimplication of any license under any copyrights, patents orother industrial or intellectual property rights.

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not designed, authorized or warranted to be suitable foruse in medical, military, aircraft, space or life support
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at
the customer’s own risk.

Export control ⎯ This document as well as the item(s)described herein may be subject to export control
regulations. Export might require a prior authorization fromnational authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values andCharacteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein forany of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage tothe device. Limiting values are stress ratings only andoperation of the device at these or any other conditions

2004 Aug 05

13

NXP Semiconductors

Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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For additional information please visit: http://www.nxp.com
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without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any licenseunder patent- or other industrial or intellectual property rights.
Printed in The Netherlands

R75/07/pp14

Date of release: 2004 Aug 05

Document order number: 9397 750 13662