PR O G RAM
November 7 (Monday) at Okayama Convention Center
12:00-13:00 Registration
13:15-13:30 Opening Remarks
Session A
Chair: K. Sueoka (Okayama Pref. Univ.)
13:30 ~ 15:30 (Reception Hall)
13:30

A-1

Large diameter SiC solution growth assisted by AI technology
Toru UJIHARA (Nagoya Univ., Japan)

14:00

A-2

Standardization of Photoluminescence and Infrared Absorption Methods for
Quantifying Low-Level Carbon in Si
Michio TAJIMA (JSNM, Japan)

14:30

A-3

Gettering and Hydrogenation of Defects and Impurities in High Efficiency
Silicon Solar Cells (Remote)Daniel MACDONALD (The Australian National University, Australia)

15:00

A-4

15:30

Ga2 O3 and beyond Ga2 O3 material of GeO 2 for power device
Kentaro KANEKO (Ritsumeikan Univ.)
Coffee Break (Robby)

Session P “Short Presentation for Posters”
Chair: S. Nishizawa (Kyushu Univ.)
15:50 ~ 17:00 (Reception Hall)
15:50

P-1

Theoretical Study on Binding of Vacancy–Oxygen Complex (VOX) to Metals
in RTP Wafers
H. Iwashiro (GlobalWafers Japan. Corp., Japan)

15:53

P-2

Numerical Modeling and Evaluation of Constitutional Supercooling during
Silicon Single Crystal Growth by Cz MethodIY. Mukaiyama (STR Japan, Japan)
15:56

P-3

First-principles Calculation on N-V Complex Formation in Si Crystal Growth
A.Sada (Okayama Pref.Univ., Japan)

15:59

P-4

Theoretical verification of constitutional supercooling and growth conditions inheavily B-doped Si crystal growth by the Czochralski method
Y. Fukui (Shinshu Univ., Japan)

16:02

P-5

A statical study of the effect of interface shape and growth time on dislocation
density in multicrystalline Si
H. Tanaka (Nagoya Univ.)

16:05

P-6

Formation of micro roughness during plasma chemical vaporization machiningof silicon wafer and a way to reduce it
D. Takeuchi (Osaka Univ., Japan)

16:08

P-7

The different Change of Dislocation Propagation in Si Wafer during High
Thermal Budget Process of Impurity Doping with different Diffusion
Temperatures
J. Yuan (Kyushu Univ., Japan)

16:11

P-8

Evaluation of Crystal Quality by High-Speed, High-Resolution Hybrid X-ray
Topography System
K. Omote (RIGAKU Corp., Japan)

16:14

P-9

A TCAD Simulation Study for a New Technique to Calculate Carrier
Recombination Lifetime Based on Open Circuit Voltage Decay Method
S. Sasaki (SUMCO Corp., Japan)

16:17

P-10

Analysis of metal gettering in p–n junctions and effect of gettering sites inside
Si wafers as starting materials for electronic device processing
E. Kamiyama (GlobalWafers Japan, Japan)

16:20

P-11

Properties of a Nickel-related electronic level in multi-crystalline silicon forsolar cells
Y. Terada (Okayama Pref.Univ., Japan)

16:23

P-12

Effect of thermal treatment on bulk lifetime of CZ silicon wafer of solar cellIIK. Tanahashi (AIST, Japan)
16:26

P-13

Fabrication of tensile-strained single-crystalline GeSn wires on amorphousquartz substrates by local liquid-phase crystallization
T. Shimura (Osaka Univ., Japan)

16:29

P-14

Electron spin resonance study of Si dangling bond defects in stacks of LPCVDSiN film on Si (100) substrate
H. Miyagawa (Kagawa Univ., Japan)

16:32

P-15

Effect of Contact Angle between SiC and Metal Solvents on Growth Surface
Morphology in Solution Growth of SiC
T. Iwai (Shinshu Univ., Japan)

16:35

P-16

Evaluation of Thermal Conductivity Characteristics near Insulator/SOI
Interface by Raman Spectroscopy
K. Sahara (Meiji Univ., Japan)

16:38

P-17

PL spectra analyses of strain-free GeSn with high-Sn composition
Y. Ito (Meiji Univ., Japan)

16:41

P-18

A linear-regression machine-learning model for predicting total energies ofsilicon crystal structures
Y. Noda (Okayama Pref. Univ., Japan)

16:44

P-19

Development of ANN potential for Si(100) surface and validation of calculation
accuracy
M. Sato (Okayama Pref. Univ., Japan)

16:47

P-20

Artificial Neural Network potential analysis on self-interstitial atoms in Si
K. Yamanaka (Okayama Pref. Univ., Japan)

16:50

P-22

Extension of Zeller’s Silicon Power Device SEB Failure Rate Calculation
method to Aviation Altitude
S. Gollapudi (Kyushu Inst.Tech., Japan)

16:53

P-23

Evaluation of β-Ga2 O3 crystalline quality grown by crucible-free techniques
I. Takahashi (C&A Co., Japan)

17:00

Coffee Break (Robby)
IIISession P “Poster Session”
Chair: S. Nishizawa (Kyushu Univ.)
17:20 ~ 19:50 (Robby)

IVNovember 8 (Tuesday) at Okayama Convention Center
Session B
Chair: T. Taishi (Shinshu Univ.)
9:30 ~ 10:30 (Reception Hall)
9:30

B-2

-Ga2 O3 crystal growth and device processing
Kohei SASAKI (Novel Crystal Technology Corp., Japan)

10:00

B-3

Phonon properties of bulk silicon-germanium analyzed by inelastic X-rayscattering
Ryo YOKOGAWA (Meiji Univ., Japan)

10:30

Coffee Break (Robby)

Session C
Chair: S. Nishizawa (Kyushu Univ.)
11:00 ~ 12:00 (Reception Hall)
11:00

C-1

Evolution of SiC material and device technologies (TBD)
Cengiz Balkas (Wolfspeed, USA)

11:30

C-2

Contributions of Synchrotron X-ray Topography to the Understanding ofDislocation Configurations in SiC substrates and Epilayers
Michael DUDLEY (Stony Brook Univ. USA)

12:00

Photo Session

12:15

Lunch BreakSession D
Chair: K. Kakimoto (Tohoku Univ.)
14:00 ~ 15:00 (Reception Hall)
14:00

D-2

Precipitation of suboxides in silicon and its impact on gettering and carrier
recombination
Gudrun KISSINGER (IHP- Leibniz Institute
Vfor High PerformanceMicroelectronics,Germany)
14:30

D-3

Formation Behavior of Oxygen Precipitates in Silicon Wafers Subjected toUltra-High-Temperature Rapid Thermal Process
Haruo SUDO (GlobalWafers Japan, Japan)

15:00

Coffee Break (Robby)

Session E
Chair: E.Kamiyama (GlobalWafers Japan)
15:30 ~ 17:30 (Reception Hall)
15:30

E-1

In situ and real-time investigation of the solidification of silicon by X-ray
imaging (Remote)
Nathalie MANGELINCK-NOËl (Institute of Materials Microelectronics andNanosciences of Provence, CNRS, France)

16:00

E-2

Defect in cast-mono silicon (Remote)
Deren YANG (State Key Lab of Silicon Materials, Zhejiang University, China)

16:30

E-3

III-N optical devices: physical processes limiting efficiency and reliability(Remote)
Matteo MENEGHINI (University of Padova, Italy)

17:00

E-4

Mitigation of bulk and surface recombination losses in silicon photovoltaicmaterials
John MURPHY (University of Warwick,UK)

18:00-20:00 Optional Dinner （ANA Hotel 19th floor “Sola”）

VINovember 9 (Wednesday) at Tenjin9Session F
Chair: N. Fukata (NIMS)
9:30 ~ 11:30 (Noh Theater Hall “Tenjin9”)
9:30

F-1

Creation of Spin Defects in Silicon Carbide by Particle Irradiation for Quantum
Applications
Takeshi OHSHIMA (QST, Japan)

10:00

F-2

Artificial-neural-network potential for accurately predicting atomic structure
and physical properties of lattice defects in semiconductors
Tatsuya YOKOI (Nagoya Univ., Japan)

10:30

F-3

Characteristics and its control of white spot defects on Image Sensors
Nobuhiko SATO (Canon Inc., Japan)

11:00

F-4

Toward Silicon Quantum Computers: Challenges in Devices, Integration, andCircuits
Takahiro MORI (AIST, Japan)

11:30

Lunch BreakSession G
Chair: S. Nishizawa (Kyushu Univ.)
13:00 ~ 14:00 (Noh Theater Hall “Tenjin9”)
13:00 G-1

Silicon wafer cleaning technology
Yuji NAGASHIMA (Shibaura Mechatoronics Corp., Japan)

13:30 G-2

Global electronics and semiconductor trend ~ Carbon neutral and DX change
the trend~
Akira MINAMIKAWA (OMDIA, Japan)

14:00-14:15 Closing Remarks

VIIS PO N S O R S
The 8th International Symposium on Advanced Science and Technology of Silicon Materials
will be held under the auspices of The 145 th Committee of The Japan Society for the Promotion ofScience (JSPS) and received financial assistance from Association for JSPS University-Industry
Research Cooperation and the following companies.

https://www.str-soft.co.jp/

SP1

https://www.nissin-giken.co.jp/

SP2

http://www.sas-globalwafers.co.jp/

SP3

https://www.semilab-j.jp/

SP4

http://www.kenix.jp/

SP5

http://www.photondesign.co.jp

SP5

https://www.sumcosi.com/english/

SP6

https://www.splead.jp/

SP7

https://www.pulstec.co.jp/en/

SP86-861-5, Seiro-machi Higashikou, Kitakanbaragun, Niigata,957-0197, JAPAN
Phone: +81-25-256-3200 Facsimile: +81-25-256-1148
URL : http://www.sas-globalwafers.co.jp/

VIIIhttp://www.pascal-co-ltd.co.jp/index.html

SP9

https://www.rigaku.com/ja

SP9

https://www.jfe-tec.co.jp/

SP10

https://www.comtec.daikin.co.jp/SC/ms/

SP10

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