BUK7S0R7-40HN-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
2 May 2019

Product data sheet

1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a copper-clip LFPAK88 package. This product has been fully designed andqualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.

2. Features and benefits
•
•

•

•

•

Fully automotive qualified to beyond AEC-Q101:• -55 °C to +175 °C rating suitable for thermally demanding environments
LFPAK88 package:• Designed for smaller footprint and improved power density over older wire bond packages
such as D²PAK for today’s space constrained high power automotive applications• Thin package and copper clip enables LFPAK88 to be highly efficient thermally
LFPAK copper clip technology enabling improvements over wire bond packages by:• Increased maximum current capability and excellent current spreading• Improved RDSon• Low source inductance• Low thermal resistance Rth
LFPAK Gull Wing leads:• Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal
cycling stress, unlike traditional QFN packages• Visual (AOI) soldering inspection, no need for expensive x-ray equipment• Easy solder wetting for good mechanical solder joint
Unique 40 V Trench 9 superjunction technology:• Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint• Improved SOA and avalanche capability compared to standard TrenchMOS• Tight VGS(th) limits enable easy paralleling of MOSFETs

3. Applications
•
•
•
•
•
•

12 V automotive systems
48 V DC/DC systems (on 12 V secondary side)
Higher power motors, lamps and solenoid control
Reverse polarity protection
LED lighting
Ultra high performance power switching

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

-

40

V

ID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 2

-

-

425

A

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

-

375

W

[1]

BUK7S0R7-40H

Nexperia

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
SymbolParameter

Tjjunction temperature

Conditions

Min

Typ

Max

Unit

-55

-

175

°C

VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11

0.43

0.62

0.7

mΩ

ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14

-

25

50

nC

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; [2]VDS = 20 V

-

74

-

nC

Static characteristics
RDSon

drain-source on-state
resistance

Dynamic characteristics
QGD

gate-drain charge

Source-drain diode
Qr
[1]
[2]

recovered charge

425A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal
design and operating temperature.
includes capacitive recovery

5. Pinning information
Table 2. Pinning information
Pin
Symbol Description

Simplified outline

Graphic symbol

1

G

gate

2

S

source3SsourceG

4Ssourcembb076mb

D

mounting base; connected to
drain

D

1

2

3

S

4

LFPAK88 (SOT1235)

6. Ordering information
Table 3. Ordering information
Type number
Package
BUK7S0R7-40H

Name

Description

VersionLFPAK88

plastic, single-ended surface-mounted package (LFPAK88); 4
leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body

SOT1235

7. Marking
Table 4. Marking codes
Type number

Marking code

BUK7S0R7-40H

7S0R740H

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

25 °C ≤ Tj ≤ 175 °C

-

40

V

BUK7S0R7-40H

Product data sheet

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BUK7S0R7-40H

Nexperia

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
SymbolParameter

Conditions

Min

Max

Unit

VGS

gate-source voltage

DC; Tj ≤ 175 °C

-10

20

V

Ptot

total power dissipation

Tmb = 25 °C; Fig. 1

-

375

W

ID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 2

-

425

A

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3

-

1983

A

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

-

500

A

-

1983

A

-

940

mJ

[1]

Source-drain diodeIS

source current

Tmb = 25 °C

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C[2]

Avalanche ruggedness
EDS(AL)S

[1]
[2]
[3]
[4]

non-repetitive drainID = 120 A; Vsup ≤ 40 V; RGS = 50 Ω;source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4[3] [4]425A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal
design and operating temperature.
500A continuous current has been successfully demonstrated during application. practically the current will be limited by PCB, thermal
design and operating temperature.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
03aa16

120
Pder
(%)

aaa-029500

500
ID
(A)
(1)

400

80

300

200
40

100

0

Fig. 1.

0

50

100

150

Tmb (°C)

0200

Fig. 2.

Product data sheet

25

50

75

100

125

150 175
Tmb (°C)

200

VGS ≥ 10 V
(1) 425A continuous current has been successfully
demonstrated during application tests. Practicallythe current will be limited by PCB, thermal designand operating temperature.

Normalized total power dissipation as afunction of mounting base temperature

BUK7S0R7-40H

0Continuous drain current as a function ofmounting base temperature

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BUK7S0R7-40H

Nexperia

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88

ID(A)

aaa-029190

104

Limit RDSon = VDS / ID

103

tp = 10 µs
100 µs

DC

102

10
1 ms
10 ms
100 ms

1
10-1

1

10

VDS (V)102

Tmb = 25 °C; IDM is a single pulse
Fig. 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage
IAL(A)

aaa-029189

103

(1)

102

(2)

10
(3)

1

10-1
10-3

10-2

10-1

1
tAL (ms)

10(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4.

Avalanche rating; avalanche current as a function of avalanche time

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter
Rth(j-mb)

Conditions

thermal resistance from Fig. 5junction to mountingbase

BUK7S0R7-40H

Product data sheet

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2 May 2019

Min

Typ

Max

Unit

-

0.35

0.4

K/W

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BUK7S0R7-40H

Nexperia

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
aaa-029191

1
Zth(j-mb)(K/W)δ = 0.5
10-1

0.2
0.1
0.05
P

10-2 0.02

δ=single shot

Fig. 5.

10-5

10-4

10-3

10-2

T

t

tp
10-3
10-6

tp

T

10-1

tp (s)

1

Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

ID = 250 µA; VGS = 0 V; Tj = 25 °C

40

43

-

V

ID = 250 µA; VGS = 0 V; Tj = -40 °C

-

40.5

-

V

ID = 250 µA; VGS = 0 V; Tj = -55 °C

36

40

-

V

ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9;
Fig. 10

2.4

3

3.6

V

ID = 1 mA; VDS=VGS; Tj = -55 °C

-

-

4.3

V

ID = 1 mA; VDS=VGS; Tj = 175 °C

1

-

-

V

VDS = 40 V; VGS = 0 V; Tj = 25 °C

-

0.86

2.3

µA

VDS = 16 V; VGS = 0 V; Tj = 125 °C

-

10

25

µA

VDS = 40 V; VGS = 0 V; Tj = 175 °C

-

614

1500

µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

VGS = -10 V; VDS = 0 V; Tj = 25 °C

-

2

100

nA

VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11

0.43

0.62

0.7

mΩ

VGS = 10 V; ID = 25 A; Tj = 105 °C;
Fig. 12

0.61

0.9

1.11

mΩ

VGS = 10 V; ID = 25 A; Tj = 125 °C;
Fig. 12

0.68

1

1.23

mΩ

VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12

0.85

1.23

1.53

mΩ

f = 1 MHz; Tj = 25 °C

0.5

1.2

3

Ω

ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14

-

144

202

nC

-

40

60

nC

-

25

50

nC

Static characteristics
V(BR)DSS

VGS(th)

IDSS

IGSS
RDSon

RG

drain-source
breakdown voltage

gate-source thresholdvoltagedrain leakage current

gate leakage current
drain-source on-state
resistancegate resistance

Dynamic characteristics
QG(tot)total gate charge

QGSgate-source charge

QGD

gate-drain charge

BUK7S0R7-40H

Product data sheet

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BUK7S0R7-40H

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N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
SymbolParameter

Conditions

Min

Typ

Ciss

input capacitance-11228 15719 pF

Cossoutput capacitance

VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15

-

2363

3308

pF

Crss

reverse transfer
capacitance

-

415

913

pF

td(on)

turn-on delay time

-

35

-

ns

tr

rise time

-

30

-

ns

td(off)turn-off delay time

-

94

-

ns

tf

fall time

-

41

-

ns

VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 5 Ω

Max

Unit

Source-drain diodeVSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16

-

0.75

1

V

trr

reverse recovery time

-

53

-

ns

Qr

recovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
[1]

-

74

-

nC

S

softness factor

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C

-

0.79

-

IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C

-

0.73

-

[1]

includes capacitive recovery
aaa-029192

400

ID
(A)

RDSon
(mΩ)

5V

320

10 V

3

7V
240

aaa-029193

4

6V

4.5 V

VGS = 5.5 V

2

160
1

80
4V
0

Fig. 6.

01

2

3
VDS (V)

0

4

0

4

8

12

16
VGS (V)20

Tj = 25 °C

Tj = 25 °C; ID = 25 A

Output characteristics; drain current as a
Fig. 7.
function of drain-source voltage; typical values

Drain-source on-state resistance as a functionof gate-source voltage; typical values

BUK7S0R7-40H

Product data sheet

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BUK7S0R7-40H

Nexperia

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
aaa-029194

400
ID
(A)
320

10-2

240

10-3

160

Min

Typ

Max

10-4

175°C
25°C

80

aaa-018138

10-1
ID
(A)

10-5

Tj = -55°C
0

0

1

2

3

4

5

6
7
VGS (V)

10-6

8

VDS = 8 V
Fig. 8.

VGS(th)
(V)

0

1

2

3

4
VGS (V)5

Tj = 25 °C; VDS = 5 V

Transfer characteristics; drain current as afunction of gate-source voltage; typical values

Fig. 9.

Sub-threshold drain current as a function ofgate-source voltage

aaa-018139

5

RDSon
(mΩ)

4

aaa-029195

4
4.5 V

3.2
Max

3

2.4

Typ

5V

5.5 V
6V

2

1.6

7V

Min
1

0.8
VGS = 10 V

0
-60

-30

0

30

60

90

120 150
Tj (°C)0180

ID = 1 mA ; VDS = VGS

Product data sheet

80

160

240

320
ID (A)

400

Tj = 25 °C

Fig. 10. Gate-source threshold voltage as a function ofjunction temperature

BUK7S0R7-40H

0Fig. 11. Drain-source on-state resistance as a functionof drain current; typical values

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BUK7S0R7-40H

Nexperia

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88aaaa-026897

2.4

VGS
(V)

2

aaa-029196

10

8

1.6
6

32 V

1.2

VDS = 14 V

4
0.8
2

0.4
0
-60

-30

0

30

60

90

120 150
Tj (°C)

0

180

0

25

50

75

100

125
QG (nC)150

Tj = 25 °C; ID = 25 A
Fig. 12. Normalized drain-source on-state resistancefactor as a function of junction temperature
VDS

Fig. 13. Gate-source voltage as a function of gatecharge; typical values
105

aaa-029197

104

Ciss

C
(pF)

ID

VGS(pl)VGS(th)

Coss

VGS

QGS2
QGS1

QGS

103

QGD
QG(tot)Crss
003aaa508

102
10-1

Fig. 14. Gate charge waveform definitions

1

10

VDS (V)102

VGS = 0 V; f = 1 MHz
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvaluesBUK7S0R7-40H

Product data sheet

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BUK7S0R7-40H

Nexperia

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
aaa-029198

400
IS
(A)
320

240

160
175°C
80

0

Tj = 25°C

0

0.2

0.4

0.6

0.8

1
VSD (V)

1.2

VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values

BUK7S0R7-40H

Product data sheet

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BUK7S0R7-40H

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N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88

11. Package outline
Plastic single-ended surface-mounted package (LFPAK88); 4 leads

SOT1235

b2
E1

D1

A1

C
A3

θ

L

y C

detail X

A

A2

E
c2

mounting
base
D

H

L2
1

2

3

e

e

4
e
b
(4x)

w

c

X

w

y

0.25

0.10

A

0

4

8 mm

scale
Dimensions (mm are the original dimensions)
Unit
max
nom
min

mm

A1

A2

0.15

1.7

0.00

1.5

A3
0.25

b

b2

c

c2

D(1)

D1(1)

E(1)

E1(1)

1.1

7.3

0.24

0.55

6.3

5.1

8.1

6.9

0.9

7.1

0.18

0.45

6.1

4.9

7.9

6.7

e
2.0

H(1)

L

L2

8.1

0.8

1.3

7.8

0.6

0.9

Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
OutlineversionReferences
IEC

JEDEC

JEITA

θ
8°
0°
sot1235_po

Europeanprojection

Issue date
17-08-02
17-08-07

SOT1235

Fig. 17. Package outline LFPAK88 (SOT1235)

BUK7S0R7-40H

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BUK7S0R7-40H

Nexperia

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88

12. Soldering
Footprint information for reflow soldering of LFPAK88 package

SOT1235
9.2
8.8
8.6
0.3

1.85

1.7

2.05

0.1
1.76

0.2
2.1

0.7

1.2

0.2

0.7

1.25

0.2

4.275

5.7

2.925
1.15

3.74
9.4

7.8

0.2

1.225

1.9

1.6 1.4 1.3

1.6

6.55
6.8
7
1.2

1.1

2

1.4
7.8
recommended stencil thickness: 0.125 mm
occupied area

solder resist

solder landsolder paste
Dimensions in mm

Issue date18-12-12
18-12-13

sot1235_fr

Fig. 18. Reflow soldering footprint for LFPAK88 (SOT1235)

BUK7S0R7-40H

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BUK7S0R7-40H

Nexperia

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death orsevere property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.

13. Legal information
Data sheet status
Document status[1][2]

Product
status [3]Definition

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia producthas been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted tobe suitable for use in life support, life-critical or safety-critical systems or

BUK7S0R7-40H

Product data sheet

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2 May 2019

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BUK7S0R7-40H

Nexperia

N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Legal information......................................................12© Nexperia B.V. 2019. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 2 May 2019

BUK7S0R7-40H

Product data sheet

All information provided in this document is subject to legal disclaimers.

2 May 2019

© Nexperia B.V. 2019. All rights reserved

13 / 13