Power GaN FETs

Power Gallium Nitride (GaN) FETs
Maximised power density with leading efficiency
Whether for low- or high-power conversion applications, power Gallium Nitride FETs (GaN FETs) are increasingly making their way
into mainstream markets. For a variety of high-voltage and low-voltage applications GaN FETs deliver the fastest transition/switching capability (highest dv/dt and di/dt), and best power efficiency. Additionally, Nexperia power GaN FETs bring enhanced
power density through reduced conduction and switching losses. Nexperia GaN FETs are available in 2 configurations:

Enhancement mode (e-mode)(for low-voltage high-power & high-voltage low/mid-powerapplications)› Enhancement mode transistor-normally off power switch› Ultra-high switching frequency› Leading soft-switching performance› No reverse-recovery charge› Low gate charge, low output charge› High performance (>99% efficiency)› Tight dynamic characteristics› Easy to drive, 0 to 5 V gate drive› Qualified for industrial applications according toJEDEC standard

Cascode mode
(for 650 V high-power applications)› 3 times lower inductances than industry-standard packages
for lowest switching losses & EMI› Higher reliability compared to wire-bonded solutions› 99% power conversion efficiency› Up to 1 MHz in soft-switching (high power density)› Easy to design gate drive, 0 to 12 V
› Low Rth( j-mb) typ for optimal cooling & 175 °C rated› Virtually no Qrr› Flexible gull winged leads for temperature cycling& board level reliability› MSL1 & Halogen free qualifications

Key applications ≤ 150 V high-power› 400 V-48 V LLC converter for datacenters› 48 V to POL direct conversion› Power supply (AC/DC) fast-charging for e-mobility› USB-C power delivery fast-charging for portables› LiDAR (non-automotive)› Class D audio amplifiers

Key applications 650 V high-power
The path to Net Zero CO2› Solar (PV) inverters› Server Titanium grade power supplies› Battery storage/ UPS inverters› Heat pumps

Key applications 650 V low-power› Datacom and telecom (AC/DC and DC/DC)› Photovoltaic (PV) micro inverter (DC/AC)› Industrial (DC/AC)› BLDC / micro servo motor drives› LED driver› TV power supply unit (PSU)
Key applications 40 V bi-directional› High-side load switch› OVP protection in smart phone USB port
› DC-to-DC converters› Power switch circuits› Stand-by power system

Industry 4.0› Servo motor drives/ frequency inverters› Telecom power supplies› Class-D Audio amplifiers› Welding machinesPower GaN FETs product portfolio

Types in bold represent new products
Types in bold red are in development
NRND - not recommended for new designs

Low voltage e-mode GaN FETs
PackageType numberVDSmax (V)RDS(on) max @VGS = ​5 V (mΩ)​

WLCSP8 (SOT8072)

GAN3R2-100CBE

3.2

WLCSP6 (SOT8090)

GANE7R0-100CBA

7WLCSP22 (SOT8089)

GANE2R7-100CBAVQFN7 (SOT8091-1)
FCLGA3 (SOT8073-1)

100

GANE1R8-100QBAGANE3R9-150QBAGAN7R0-150LBE

150

Tj max (˚C)​

ID max​(A)​

150

QG(tot) [typ] (nC)

QOSS [typ] (nC)​

9.2

50

29

2.764

1.81003.91507150

10020130

7.647

QG(tot) [typ] (nC)

QOSS [typ] (nC)​

650 - 700 V e-mode GaN FETsPackage

DFN5060-5(SOT8075-1)

Type number

DPAK(SOT428-2)

RDS(on) max @VGS = ​6 V (mΩ)​

Tj max (˚C)​

ID max​(A)​

GAN140-650FBE

140150173.533

GAN190-650FBE

190

150

11.5

2.824.5

GANE350-650FBAGANE600-650FBADFN8080-8(SOT8074-1)

VDSmax (V)6503506600

3.3

GAN080-650EBE

80150

296.260

GAN140-650EBE

140150173.533

GAN190-650EBE

190

150

11.5

2.8

24.5

GANE140-700BBA

140

17190

11.524010350

6QG(tot) [typ] (nC)

QOSS [typ] (nC)​GANE190-700BBAGANE240-700BBA

700

GANE350-700BBA

Bi-directional e-mode GaN FETs
Package
VQFN16 (SOT8092-1)

Type number

VDSmax (V)GANB1R2-040QBAWLCSP22 (SOT8086)

GANB4R8-040CBAWLCSP16 (SOT8087)

GANB8R0-040CBAWLCSP12 (SOT8088)

GANB012-040CBARDS(on) max @VGS = ​5 V (mΩ)​

Tj max (˚C)​

ID max​(A)​

1.2
40

4.8

100
125

20814121015.8

650 V cascode GaN FETs
PackageType number

VDSmax (V)RDS(on) max @Tj max (˚C)​
VGS = ​10 V (mΩ)​

ID max​(A)​

QG(tot) [typ] (nC)

CCPAK1212 (SOT8000)

GAN039-650NBB

3915058.5

26

CCPAK1212i (SOT8005)

GAN039-650NTB

3915058.5

26TO-247-3L (SOT429-3)

GAN041-650WSB

41

175

47.2

22GAN063-650WSA (NRND)

60

175

34.5

15

GAN111-650WSB

114

TO-247-3(SOT429)

650

QOSS [typ] (nC)​

The innovators of copper-clip package technology
Nexperia brings 20 years of experience in high-quality, robust copper-clip SMD packaging to its
GaN FET portfolio. The CCPAK comes in top-side (CCPAK1212) and bottom-side (CCPAK1212)
cooling designs for enhanced flexibility and heat dissipation.

nexperia.com/gan-fets

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Date of release:
July 2024