PDTA123T series
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 02 — 3 September 2009

Product data sheet

1. Product profile
1.1 General description
PNP Resistor-Equipped Transistors (RET) family.
Table 1.

Product overview

Type numberPackage

NPN complement

NXP

JEITA

JEDEC

PDTA123TE

SOT416SC-75-

PDTC123TE

PDTA123TK

SOT346SC-59A

TO-236

PDTC123TK

PDTA123TM

SOT883

SC-101-

PDTC123TM

PDTA123TS[1]SOT54

SC-43A

TO-92

PDTC123TS

PDTA123TT

SOT23-

TO-236AB

PDTC123TT

PDTA123TU

SOT323SC-70-

PDTC123TU[1]

Also available in SOT54A and SOT54 variant packages (see Section 2)

1.2 Features
n Built-in bias resistorsn Simplifies circuit designn 100 mA output current capabilityn Reduces component countn Reduces pick and place costs

1.3 Applicationsn Digital applicationsn Controlling IC inputs

n Cost-saving alternative for BC857 series
in digital applicationsn Switching loads

1.4 Quick reference data
Table 2.

Quick reference data

SymbolParameterConditions

MinTypMax

UnitVCEOcollector-emitter voltage

open base--−50VIO

output current--−100mA

R1bias resistor 1 (input)

1.54

2.2

2.86kΩPDTA123T series

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

2. Pinning information
Table 3.

Pinning

PinDescription

Simplified outline

SymbolSOT54
1input (base)2

output (collector)

3

GND (emitter)

2
12
3

R1

1001aab347

3006aaa217

SOT54A
1input (base)2

output (collector)

3

GND (emitter)

2
12R1

1

3001aab348

3006aaa217

SOT54 variant
1input (base)2output (collector)

3

GND (emitter)

2
12
3

R1

1001aab447

3006aaa217

SOT23; SOT323; SOT346; SOT416
1

input (base)

2GND (emitter)3output (collector)

33R1

11

22006aaa144

sym009

SOT883
1input (base)

2GND (emitter)13output (collector)

2

3
3
R1Transparent
top view

12sym009

PDTA123T_SER_2

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 02 — 3 September 2009

2 of 10

PDTA123T series

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

3. Ordering information
Table 4.

Ordering information

Type numberPackageNameDescription

Version

PDTA123TE

SC-75

plastic surface mounted package; 3 leads

SOT416

PDTA123TK

SC-59A

plastic surface mounted package; 3 leads

SOT346

PDTA123TM

SC-101

leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm

SOT883

PDTA123TS[1]SC-43A

plastic single-ended leaded (through hole) package;
3 leads

SOT54

PDTA123TT-plastic surface mounted package; 3 leads

SOT23

PDTA123TU

SC-70

plastic surface mounted package; 3 leads

SOT323[1]

Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9)

4. Marking
Table 5.

Marking codes

Type number

Marking code[1]PDTA123TE

2A

PDTA123TKGA

PDTA123TM

FA

PDTA123TS

TA123T

PDTA123TT

ZL*

PDTA123TU

*1S

[1]

* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia* = W: made in China

PDTA123T_SER_2

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 02 — 3 September 2009

3 of 10

PDTA123T series

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

MinMax

UnitVCBO

collector-base voltage

open emitter-−50VVCEO

collector-emitter voltage

open base-−50VVEBO

emitter-base voltage

open collector-−5VIO

output current-−100mAICM

peak collector current

single pulse;
tp ≤ 1 ms-−100mA

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT416[1]

-

150mW

SOT346[1]-250mW

SOT883[2][3]-250mW

SOT54[1]-500mW

SOT23[1]-250mW

SOT323[1]-200mW

Tstg

storage temperature−65+150°C

Tj

junction temperature-150°C

Tambambient temperature−65+150°C[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

6. Thermal characteristics
Table 7.

Thermal characteristics

SymbolParameter

Conditions

Rth(j-a)thermal resistance fromjunction to ambientin free air

TypMaxUnit

SOT416[1]

--

833

K/W

SOT346

[1]

--

500

K/W

SOT883[2][3]

-

-

500

K/W

SOT54[1]

--

250

K/W

SOT23[1]

--

500

K/W

SOT323

[1]--

625

K/W

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

PDTA123T_SER_2

Product data sheetMin© NXP B.V. 2009. All rights reserved.

Rev. 02 — 3 September 2009

4 of 10PDTA123T series

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
SymbolParameter

Conditions

Min

TypMaxUnit

ICBO

collector-base cut-off
current

VCB = −50 V; IE = 0 A--−100nA

ICEO

collector-emitter cut-off VCE = −30 V; IB = 0 A
current
VCE = −30 V; IB = 0 A;
Tj = 150 °C--−1µA--−50µAnA

IEBO

emitter-base cut-off
current

VEB = −5 V; IC = 0 A--−100hFE

DC current gain

VCE = −5 V; IC = −20 mA

30--VCEsat

collector-emittersaturation voltage

IC = −10 mA; IB = −0.5 mA--−150mV

R1bias resistor 1 (input)

1.54

2.2

2.86

kΩ

Cc

collector capacitance--3pF

VCB = −10 V; IE = ie = 0 A;
f = 1 MHz006aaa691

500006aaa692−1hFE
(1)

400

VCEsat
(V)

300

(2)

−10−1200(1)
(2)
(3)

(3)

100

0−10−1−1−10−102−10−2−10−1IC (mA)

VCE = −5 V

IC/IB = 20
(1) Tamb = 100 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = −40 °C(3) Tamb = −40 °C

DC current gain as a function of collectorcurrent; typical values

Fig 2.

−102

Collector-emitter saturation voltage as afunction of collector current; typical values

PDTA123T_SER_2

Product data sheet−10IC (mA)

(1) Tamb = 100 °C

Fig 1.

−1© NXP B.V. 2009. All rights reserved.

Rev. 02 — 3 September 2009

5 of 10

PDTA123T series

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

8. Package outline

330.450.15

1210.30
0.15

20.25
0.10

Dimensions in mm

04-11-04

Package outline SOT416 (SC-75)
0.62
0.55
0.55
0.47

Dimensions in mm

Fig 4.

0.50
0.46

0.26
0.10
04-11-11

Package outline SOT346 (SC-59A/TO-236)

0.45
0.38

4.2
3.6

30.30
0.22

0.48
0.40

1.02
0.95

0.65

12

4.8
4.4
2

2.54
31

0.20
0.12

5.2
5.0

0.35
Dimensions in mm

Fig 5.

0.50
0.35

1.9

10.30
0.22

0.6
0.2

3.0 1.7
2.5 1.3

1.75 0.9
1.45 0.7

Fig 3.

1.3
1.0

3.1
2.7

0.95
0.60

1.8
1.4

03-04-03

Package outline SOT883 (SC-101)

14.5
12.7

Dimensions in mm

Fig 6.

04-11-16

Package outline SOT54 (SC-43A/TO-92)
0.45
0.38

0.45
0.38

4.2
3.6

1.27

4.2
3.6

1.27

0.48
0.40

3 max

1

2.5max

0.48
0.40
12

4.8
4.4

5.08
2.54

2

4.8
4.4

2.54
3

1.27

3
5.2
5.0
Dimensions in mm

Fig 7.

5.2
5.0

14.5
12.7

Package outline SOT54A

04-06-28

Dimensions in mm

Fig 8.

05-01-10

Package outline SOT54 variant

PDTA123T_SER_2

Product data sheet

14.512.7© NXP B.V. 2009. All rights reserved.

Rev. 02 — 3 September 2009

6 of 10

PDTA123T series

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

3.0
2.8

1.1
0.9

2.2
1.8

1.1
0.8
0.45
0.15

33

0.45
0.15
2.5 1.4
2.1 1.2

2.2 1.35
2.0 1.15

112

0.48
0.38

1.9
Dimensions in mm

Fig 9.

0.25
0.10

1.304-11-04

Package outline SOT23 (TO-236AB)

20.4
0.3

0.15
0.09
Dimensions in mm

04-11-04

Fig 10. Package outline SOT323 (SC-70)

9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number

Package

Description

3000

5000

10000--135

PDTA123TE

SOT4164 mm pitch, 8 mm tape and reel

-115

PDTA123TK

SOT3464 mm pitch, 8 mm tape and reel

-115

--135

PDTA123TM

SOT8832 mm pitch, 8 mm tape and reel---315

PDTA123TS

SOT54

bulk, straight leads--412-SOT54A

tape and reel, wide pitch---116tape ammopack, wide pitch---126

SOT54 variant bulk, delta pinning

--112

-

PDTA123TT

SOT234 mm pitch, 8 mm tape and reel

-215

-235

PDTA123TU

SOT3234 mm pitch, 8 mm tape and reel

-115

-135

[1]

For further information and the availability of packing methods, see Section 12.

PDTA123T_SER_2

Product data sheet

Packing quantity© NXP B.V. 2009. All rights reserved.

Rev. 02 — 3 September 2009

7 of 10

PDTA123T series

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

10. Revision history
Table 10.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PDTA123T_SER_2

20090903

Product data sheet-PDTA123T_SER_1

Modifications:• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technicalcontent.

PDTA123T_SER_1

20060307

Product data sheet

PDTA123T_SER_2

Product data sheet--© NXP B.V. 2009. All rights reserved.

Rev. 02 — 3 September 20098 of 10

PDTA123T series

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

11. Legal information
11.1 Data sheet status
Document status[1][2]Product status[3]Definition

Objective [short] data sheet

Development

This document contains data from the objective specification for product development.

Preliminary [short] data sheet

Qualification

This document contains data from the preliminary specification.

Product [short] data sheet

Production

This document contains the product specification.

[1]

Please consult the most recently issued document before initiating or completing a design.

[2]

The term ‘short data sheet’ is explained in section “Definitions”.

[3]

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences ofuse of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.

11.3 Disclaimers
General — Information in this document is believed to be accurate andreliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of suchinformation and shall have no liability for the consequences of use of suchinformation.
Right to make changes — NXP Semiconductors reserves the right to makechanges to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use ofNXP Semiconductors products in such equipment or applications andtherefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are soldsubject to the general terms and conditions of commercial sale, as publishedat http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from national authorities.
Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

PDTA123T_SER_2

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 02 — 3 September 20099 of 10

PDTA123T series

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

13. Contents
1
1.1
1.2
1.3
1.4
234
56
7
8
91011
11.1
11.2
11.3
11.4
1213

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009.

All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 September 2009
Document identifier: PDTA123T_SER_2