PRELIMINARY

INJ0203BP1

Notice : This is not a final specification
Some parametric are subject to change.

High Speed Switching
Silicon P-channel MOSFETDESCRIPTIONOUTLINE DRAWING

INJ0203BP1 is a Silicon P-channel MOSFET.

4.4

use such as portable

1.5

FEATURE・Input impedance is high, and not necessary toconsider a drive electric current.
・High drain current ID=-2.6A
・Drive voltage -2.5V・Low on Resistance. RDS(on)=220mΩ(TYP).

②1.0

③

①

3.9

1.6

machinery , because voltage drive and low on resistance.

2.5

This product is most suitable for

UNIT：ｍｍ

0.4

0.5
0.4
1.5

※@ID=-2.6A,VGS=-2.5V

MARKING

3.0

RDS(on)=130mΩ(TYP).
※@ID=-2.6A,VGS=-4.5V

・High speed switching.
・ Ultra-compact dimensions allow for miniaturization ofsets and high-density mounting.

TERMINAL CONNECTORJEITA：SC-62①：GATEJEDEC：SOT-89②：DRAIN③：SOURCEAPPLICATIONHigh Speed Switching , Analog Switching etc.

EQUIVALENT CIRCUIT

MARKINGD

MAXIMUM RATINGS（Ta=25℃）
SymbolParameter

RatingUnit

VDSS
VGSSID
IDP

Drain-Source Voltage
Gate-Source Voltage
Drain Current(DC) ※1Drain Current(Pulse) ※2-20±10-2.6-6VVAAPDTotal Power Dissipation ※11.5WTch

Channel Temperature+150℃Tstg

Storage temperature-55～+150℃

Type NameJ7GLOTＮｏ．

S※1：When mounted on glass epoxy board（20mm×20mm×1mm,Cu pad 100mm2）※2：Pw≦10ms, Duty cycle≦1%ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter

SymbolDrain-Source Breakdown Voltage

V(BR)DSS
IGSS
IDSS
Vth

Gate-Source Leak current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain-Source On-StateResistance
Input Capacitance
Output Capacitance
Switching Time

RDS(ON)
Ciss
Cosston
toff

MIN

Limit
TYP

ID=-250μA, VGS=0V-20--V

VGS=±10V, IDS=0A--±10μA

VDS=-20V, VGS=0V---1.0μA

ID=-250μA, VDS=VGS

-0.4

--1.2

V

ID=-2.6A, VGS=-2.5V
ID=-2.6A, VGS=-4.5V

-

220
130

300
170mΩ

-

320-pF-90-pF

-320

-ns-

1900

-ns

Test Condition

VDS=-10V, VGS=0V, f=1MHz
VDD=-20V, ID=-200mA
VGS=0～-5V

MAX

Unit

PRELIMINARY

INJ0203BP1

Notice : This is not a final specification
Some parametric are subject to change.

High Speed Switching
Silicon P-channel MOSFETTYPICAL CHARACTERISTICS
ID - VDS

ID - VDS
-500

-3.0
-1.5V

-2.6V

-2.5-400

Ta = 25℃

-2.0V
-1.4V

-300
-1.3V

-200

Drain current
ID (A)

Drain current
ID (mA)

-2.4V
-2.2V

Ta = 25℃

-1.6V

-2.0V

-1.2V

-100

-2.0-1.8V
-1.5
-1.0

-1.6V

-0.5

-1.4V

VGS=-1.1V

VGS=-1.0V
000-0.1-0.2-0.3-0.40-0.5-0.5

ID - VGS

IDR - VSD-10-10

VDS =-10V

VGS = 0V

-1

Drain current
ID (A)

Reverse drain current
IDR (A)-1.5

Drain-source voltage
VDS (V)

Drain-source voltage
VDS (V)

Ta=
125℃
75℃
25℃
-25℃

-0.1

-1

Ta=
125℃
75℃
25℃
-25℃

-0.1

-0.01

-0.01
0-0.5

-1.0

0

-1.5

-0.5

-1.0

-1.5

-2.0

-2.5

Gate-source voltage
VGS (V)

Source-drain voltage
VSD (V)|Yfs| - ID

Vth - Ta10-1.5

VDS = -10V

Forward transfer admittance|Yfs| (S)ID = -0.25mA
VDS = VGS

Gate threshold voltage
Vth (V)-1.0-1.0-0.5

1Ta=125℃
75℃
25℃
-25℃

0.1

0.01

0-50

050

100

Ambient temperature
Ta (℃)

150-0.01-0.1-1

Drain current
ID (A)-10

PRELIMINARY

INJ0203BP1

Notice : This is not a final specification
Some parametric are subject to change.

High Speed Switching
Silicon P-channel MOSFETRDS(ON) - ID

RDS(ON) - ID

10

Static drain-source on-state resistanceRDS(ON) (Ω)

Static drain-source on-state resistanceRDS(ON) (Ω)

10
VGS = -4.5V

1Ta=125℃
75℃
25℃-25℃0.1

VGS = -2.5V

Ta=125℃
75℃
25℃
-25℃

10.1

0.01

0.01
-0.1

-1-0.1-10-1
Drain current
ID (A)

Drain current
ID (A)RDS(ON) - ID

RDS(ON) - VGS
2.0

Static drain-source on-state resistanceRDS(ON) (Ω)

Static drain-source on-state resistanceRDS(ON) (Ω)

10
VGS = -1.8V

Ta=125℃
75℃
25℃
-25℃

10.1

0.01
-0.1-1

ID = -1A

1.5

1.0
Ta=125℃
75℃
25℃
-25℃

0.50-100-2

Drain current
ID (A)-4-6-8-10

Gate-source voltage
VGS (V)C - VDSRDS(ON) - Ta
0.5

1000
Ciss

0.4

Crss
VGS = -1.8V
ID = -1A

0.3

CapacitanceC (pF)

Static drain-source on-state resistanceRDS(ON) (Ω)-10

VGS = -2.5V
ID = -2.6A

0.2

0.1

Coss100

Ta = 25℃
VGS = 0V
f = 1MHz

VGS = -4.5V
ID = -2.6A

010-50050

100

Ambient temperature
Ta (℃)

150-0.1-1-10

Drain-source voltage
VDS (V)-100

PRELIMINARY

INJ0203BP1

Notice : This is not a final specification
Some parametric are subject to change.

High Speed Switching
Silicon P-channel MOSFETt - ID
10000
Ta = 25℃
VDD = -20V
VGS = -5V

Switching timet (ns)tofftf
1000
tontr
100
-0.001

-0.01

-0.1

-1

Drain current
ID (mA)

Switching time test condition

0V

10%OUT
IN

RL50Ω

VDD

Input waveform

0V

90%-5VIN-5V

VDS(on)90%

10usDuty ≦ 1%
入力：tr, tf < 10ns
VDD=-20V,VG=-5V

Common source
Ta = 25℃

Output waveform
VDD

10%td(on)

td(off)trtontftoffKeep safety first in your circuit designs!
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Jul.2024