Fisica Alonso Acosta Tomo
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Tomo 2 Album 2 Compartidos
Enhanced Fisica Alonso Acosta
Fisica Alonso Acosta 8 Replies to“Fisica Alonso Acosta” The
expression of Fisica Alonso
Acosta is in our design of hightstandards. We do not forget thedetails as our style of designing.
You can look into our web pages
to have more information of thereputation that we have.The
present invention relates to amethod of selectively removing athin film by etching, and more
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particularly to a method of
selectively removing a thin filmby etching, which can selectively
remove a thin film, the amount of
which to be removed iscomparatively large in etching forremoving a thin film formed on
the surface of a substrate as well
as of a thin film which is formedat the surface of a substrate and isformed in a pattern different fromthat of a thin film to be removed.
In a semiconductor device, a multilayered wiring is formed, and the3/9

resulting wirings are connected toeach other by means of a via hole.
An example of such asemiconductor device is asemiconductor device for a liquid
crystal color display system. In
this case, in order to improve theaperture ratio and prevent anelectric short circuit, it isnecessary to form a via holewhich penetrates a plurality oflayers of interlayer insulating
films. In such a multi-layeredstructure, an opening is formed in
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a relatively thick interlayer
insulating film so as to penetrateit, and then, a wiring is formed
therethrough, and thereafter, athin film is formed over theresulting structure. In this case,since it is necessary to use anetching resist which has a highetching resistance, it is necessary
to use an organic film having athickness of about 1.mu.m as aprotective film. Further, since aliquid crystal substrate is
subjected to a high temperature
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treatment in an evaporation deviceof an organic film, it is notdesirable to use an inorganic
material such as silicon oxide forthe organic film. In addition tosuch a thin film, a thin film forforming electrodes, wiring, andthe like is formed in the above
multi-layered structure. In thepast, in removing such a thin film,
a thin film formed on the surface
of a semiconductor substrate isetched using an etching liquid,
which is prepared by adding a6/9

mixture of an inorganic material
such as silicon oxide, carbon, and7/9

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