2008B1911                          BL02B2

PDF ᴺߦࠃࠆ Ge0.135Te0.865 ߩ⚿᥏᭴ㅧ⸃ᨆ
PDF analysis discover a new structure, A7-type Ge᧻᳗ ೑ਯa㧘ఽፉ ℂᕺb㧘ጊ↰ ᣹b㧘ᧁ⥵ ᒄ৻c㧘ਭ଻↰ ૫ၮd
Toshiyuki Matsunagaa, Rie Kojimab, Noboru Yamadab, Kouichi Kifunec, Yoshiki KubotadCࡄ࠽࠰࠾࠶ࠢ ᩣ  ࡑ࠹࡝ࠕ࡞ࠨࠗࠛࡦࠬ⸃ᨆ࠮ࡦ࠲࡯
ࡄ࠽࠰࠾࠶ࠢ ᩣ  ࠺ࠫ࠲࡞࡮ࡀ࠶࠻ࡢ࡯ࠢ㐿⊒࠮ࡦ࠲࡯㧘cᄢ㒋ᐭ┙ᄢቇ ✚วᢎ⢒⎇ⓥᯏ᭴dᄢ㒋ᐭ┙ᄢቇᄢቇ㒮 ℂቇ♽⎇ⓥ⑼ ‛ℂ⑼ቇኾ᡹

bGe-Sb ੑర♽ߦ߅޿ߡ‫ޔ‬A7 ဳ᭴ㅧࠍᜬߟ Ge ߇‫ޔ‬หߓߊ A7 ဳ᭴ㅧࠍᜬߟ Sb ࡑ࠻࡝࠶ࠢࠬਛߦߡ⊒⷗ߐࠇߚ‫ᧃ☳ޕ‬᭴ㅧ⸃ᨆߢ‫ޔ‬ㄭᐕ‫⚿ޔ‬᥏᭴ㅧ⸃ᨆߦ㗫❥ߦ↪޿ࠄࠇߡ޿ࠆ Rietveld ᴺߢߪߎߩ᭴ㅧߩሽ࿷ࠍ⷗಴ߔߎߣߪ࿎㔍ߢ޽ߞߚ߇‫⃻ޔ‬࿷‫ޔ‬ᣂߚߥ᭴ㅧ⸃ᨆᚻᴺߣߒߡᵈ⋡ߐࠇߡ޿ࠆ
PDF ᴺࠍ↪޿ࠆߎߣߦࠃࠅ‫ߩߎޔ‬ᣂߚߥ⋧ߩሽ࿷ࠍ⷗಴ߒ‫⚿ߩߘޔ‬᥏᭴ㅧࠍ⹦⚦ߦ⸃ᨆߔࠆߎߣ߇ߢ߈ߚ‫ޕ‬ࠠ࡯ࡢ࡯࠼㧦 ⋧ᄌൻ⸥㍳‫ޔ‬GeSb ੑర♽‫ᧃ☳ޔ‬࿁᛬‫ޔ‬᭴ㅧ⸃ᨆ‫ޔ‬PDF‫ޔ‬Rietveld⢛᥊ߣ⎇ⓥ⋡⊛㧦
DVD-RAM ߿ Blu-ray disc ߦઍ⴫ߐࠇࠆᄢኈ㊂㜞ㅦ⋧ᄌൻశ⸥㍳ᇦ૕ߣߒߡ‫ޔ‬GeTe-Sb2Te3 ᡆੑర♽ൻว‛߇ᦨ߽ఝࠇߚ㜞ㅦ⋧ᄌൻ․ᕈ‫․࡞ࡃࠗࠞ࡯ࠕޔ‬ᕈࠍ␜ߒ‫ޔ‬ᄙߊߩᏒ⽼࠺ࠖࠬࠢߦᄙ↪
ߐࠇߡ޿ࠆ[1]‫᧚ߩߎޕ‬ᢱߪ‫ ⚂ޔ‬20 ᐕ೨ߦ⊒⷗㧛㐿⊒ߐࠇߚ߽ߩߢ޽ࠆ߇‫ߩߘޔ‬ථ⿧ߒߚ․ᕈߩ
⦟ߐ᡿‫߽੹ޔ‬ዏ‫⃻ޔ‬ᓎߢ૶↪ߐࠇߡ޿ࠆ‫ᤨޔࠄ߇ߥߒ߆ߒޕ‬ઍߪ‫৻ࠢࠬࠖ࠺ޔ‬ᨎߢ࠹࡜ࡃࠗ࠻⸥㍳߇น⢻ߣߥࠆߎߣࠍ⋧ᄌൻశ⸥㍳ߦ᳞߼ߡ߅ࠅ‫⋧ߦᦝޔ‬ᄌൻ᧚ᢱߪ‫ޔ‬ඨዉ૕ࡊࡠ࠮ࠬࠍ೑↪ߒߚ⿥ᓸ⚦ൻᛛⴚߦࠃࠆ㜞ኒᐲ࿕૕㔚᳇ࡔࡕ࡝࡯߳ߩᔕ↪߇ᕆࡇ࠶࠴ߢㅴ߼ࠄࠇߡ޿ࠆ‫ߚ߹ޕ‬ඨዉ૕࡟࡯ࠩ࡯శḮ߿ඨዉ૕ࡊࡠ࠮߽ࠬ‫ޔ‬ᣣ‫ޔޘ‬ㅴൻߒߡ߅ࠅ‫ޔ‬ᚒ‫ޔߚߒࠣࡦ࠴࠶ࡑߣࠄࠇߘޔߪޘ‬ᦝߦ․ᕈߩ⦟޿᧚ᢱࠍត⚝ߒ⛯ߌߡ޿ࠆ‫ޕ‬Sb-rich ߥ Ge-Sb ੑర♽ߪ‫ޔ‬GeTe-Sb2Te3 ᡆੑర♽ࠃࠅන⚐ߢ޽ࠅ‫ޔ‬ᛒ޿߿ߔ޿‛⾰ߢ޽ࠆ[2]‫⃻ޔ߼ߚߩߘޕ‬࿷‫ޔ‬ਥߦ‫ޔ‬࿕૕㔚᳇ࡔࡕ࡝࡯↪᧚ᢱߣߒߡߩ⎇ⓥ㧛㐿⊒߇㍈ᗧㅴ߼ࠄࠇߡ޿ࠆ‫੹ޕ‬࿁‫ ߩߎޔ‬Ge-Sb ੑర♽ൻว‛ߩ⚿᥏᭴ㅧߦߟ޿ߡ‫⚦⹦ޔ‬ߦ⸃ᨆࠍⴕߞߚ‫ޕ‬ታ㛎㧦☳ᧃ࿁᛬᷹ቯ↪ߩ⹜ᢱߪ‫ޔ‬ᰴߦ␜ߔᣇᴺߦࠃࠅ૞ᚑߒߚ‫⋥ޕ‬ᓘ 120mm ߩࠟ࡜ࠬ⵾࠺ࠖࠬࠢ᧼਄ߦ‫ޔ‬Ge0.135Sb0.865 ࠍࠬࡄ࠶࠲ᴺߦߡ 300nm ෘ⒟ᐲᚑ⤑ߒߚ‫࡯ࠩ࡯࡟ޕ‬ᾖ኿ߦࠃࠅ⚿᥏ൻߐߖߚᓟ‫޿↪ࠍ࡯࡜ࡘ࠴ࡄࠬޔ‬ᡂࠅ⪭ߣߒ☳ᧃ⹜ᢱࠍᓧ‫ޔࠍᧃ☳ߩߘޔ‬ౝᓘ 0.3mm ߩ⍹⧷ࠟ࡜ࠬ⵾ࠠࡖ
ࡇ࡜࡝࡯ߦలႯߒߚ‫ޕ‬ᄢ᳇ߣߩធ⸅ࠍㆤᢿߔࠆߚ߼‫⹜ߩ࡯࡝࡜ࡇࡖࠠޔ‬ᢱᝌ౉ญࠍࠕ࠮࠴࡟ࡦ㧛㉄⚛ᷙวࠟࠬࡃ࡯࠽࡯ߢኽߓಾߞߚ‫ޕ‬☳ᧃ࿁᛬ታ㛎ߪ㧔⽷㧕㜞ノᐲశ⑼ቇ⎇ⓥ࠮ࡦ࠲࡯㧔SPring-8㧕
‫ޔ‬BL02B2 ࡜ࠗࡦ[3]ߢⴕߞߚ‫ޕ‬᡼኿శߪ‫ޔ‬ੑ⚿᥏ಽశེߦࠃࠅන⦡ൻߐߖߚᓟ‫ޔ‬ᓟ⟎ࠦ࡝ࡔ࡯࠲࡯ࡒ࡜࡯ߦࠃࠅᐔⴕൻߐߖ‫ޔ‬࿁᛬ታ㛎↪౉኿ࡆ࡯ࡓߣߒߡ↪޿ߚ‫౉ޕ‬኿ࡆ࡯ࡓߩࠛࡀ࡞ࠡ࡯ߪ 29.5keV ߢ޽ࠆ‫ࠗࡃ࠺ޕ‬㧙ࠪࠚ࡜࡯ࠞࡔ࡜ߩࠞࡔ࡜ඨᓘߪ 287mm ߢ޽ࠅ‫৻ޔ‬ᣇࠗࡔ࡯ࠫࡦࠣࡊ࡟࡯࠻ߩࡇࠢ࠮࡞ࠨࠗ࠭ߪ 100μm2 ߢ޽ࠆ‫ ⚂ߪࠇߎޕ‬0.02 㩩ߩⷺᐲಽ⸃⢻ߦኻᔕߔࠆ‫⚿ޕ‬᥏᭴ㅧߪ Rietveld ᴺ[4]‫ޔ‬PDF㧔pair distributionfunction㧕ᴺ[5]ߦࠃߞߡ♖ኒߦ᳿ቯߒߚ‫ޔߪࡓ࡜ࠣࡠࡊߚ޿↪ޕ‬㗅ߦ‫ޔ‬JANA2000[6]‫ޔ‬PDFFIT[7]ߢ޽ࠆ‫ޕ‬ේሶᢔੂ࿃ሶߪ‫ޔ‬ਛᕈߩ߽ߩࠍ↪޿ߚ‫⸃ޕ‬ᨆߩ♖ᐲࠍะ਄ߐߖࠆߚ߼‫ޔ‬50μm2 ߩࡇࠢ࠮࡞ࠨࠗ࠭ߦߡᒝᐲ࠺࡯࠲ࠍ⺒ߺㄟߺ‫ ⚂ޔ‬0.01 㩩ೞߺߩ࿁᛬ᒝᐲ࠺࡯࠲ࠍᓧߚ‫ޕ‬Ᏹ᷷ߦ߅޿ߡ‫ޔ‬CeO2ᮡḰ☳ᧃ⹜ᢱ㧔a=5.4111Έ㧕ߩ࿁᛬✢߽‫ߡߒߣࠬࡦ࡟ࠔࡈ࡟ޔ‬หߓ᧦ઙߦߡ⸥㍳ߒ‫ߚ޿↪ޔ‬᡼኿శߩࠛࡀ࡞ࠡ࡯ࠍ⏕⹺ߒߚ‫ޕ‬ૐ᷷‫ޔ‬㜞᷷ታ㛎ߪ‫ޔ‬ᚲቯߩ᷷ᐲߦ⸳ቯߒߚ N2 ࠟࠬࠍࠠࡖࡇ࡜࡝࡯ߦ็߈ઃߌࠆߎߣߦࠃࠅⴕߞߚ‫ޕ‬⚿ᨐ߅ࠃ߮⠨ኤ㧦ᓧࠄࠇߚ࿁᛬࿑ᒻࠍ࿑㧔Fig. 1㧕ߦ␜ߔ‫ߎޕ‬ߩ࿑ߦⷰࠄࠇࠆࠃ߁ߦ‫ޔ‬ᓧࠄࠇߚ࿁᛬ࡄ࠲࡯ࡦߪᲧセ⊛න⚐ߢ޽ࠅ‫ ߩߎޔ‬Ge-Sb ☳ᧃ⚿᥏⹜ᢱ߇‫ޔ‬As‫ޔ‬Sb‫ޔ‬Bi ߥߤ߇⚿᥏ൻߔࠆ A7 ဳ᭴ㅧ[8]න৻⋧ߦ⚿᥏ൻߒߡ޿ࠆߎߣࠍ␜ߒߡ޿ߚ‫ߢߎߘޕ‬ᚒ‫ޔߪޘ‬ⓨ㑆⟲㧦R-3m ࠍ઒ቯߒ‫ޔ‬Ge‫ޔ‬Sb ߇‫ ߦࡓ࠳ࡦ࡜ޔ‬6c ࠨࠗ࠻ࠍභ᦭ߒߡ޿ࠆߣ઒ቯߒߡ‫ޔ‬Rietveld ⸃ᨆࠍⴕߞߡ
ߺߚ㧔model 1㧕‫⸃ޕ‬ᨆ⚿ᨐࠍ‫ޔ‬Fig. 1 ਗ߮ߦ
Table 1 ߦ␜ߔ‫ޕ‬R ࿃ሶ߽චಽዊߐߥ୯ࠍ␜ߒߡ߅ࠅ‫ޔ‬ㅢᏱߥࠄ߫‫ߩߎޔ‬Ბ㓏ߢ᭴ㅧ⸃ᨆ߇⚳ࠊߞߚߣߒߡ߽‫ޔ‬໧㗴ߪή޿ࠃ߁ߦᕁࠊࠇ
Fig.1 Observed (+) and calculated (grey line) x-rayࠆ‫⚿ࠣࡦࠖ࠹࠶ࠖࡈࠄ߇ߥߒ߆ߒޕ‬ᨐ㧔Fig. 1㧕
diffraction profiles of Ge0.135Sb0.865 crystallineࠍ⦟ߊⷰࠆߣ‫⚦ޔ‬ㇱߢ‫ⷰޔ‬᷹ᒝᐲߣ‫▚⸘ޔ‬ᒝphase at 86 K. A difference curveᐲߩ৻⥌߇ਇචಽߢ޽ߞߚ‫ޕ‬(observedícalculated) is shown at the top of thefigure. The observed diffraction pattern apparently
exhibits that this crystal crystallizes into a single
phase with an A7-type structure.
Table1.

Refined structural parameters for Ge0.135Sb0.865 at 86 K assuming that the Ge and Sb atoms
randomly occupy the same 6c site. Space group is R-3m. Standard deviations are shown inparentheses. Final R-factors and lattice parameter are Rp = 3.69 %, Rwp = 5.13 %, RFobs = 0.86 %,RFwobs = 0.90 %, a = 4.1820 (1) Å, and c = 11.3316 (4) Å.

atom

site

gxyz

U11(Å2)

U11(Å2)

Sb/Ge

6c

0.865 / 0.135

000.23219 (4)0.0084 (2)0.0140(4) ߘߎߢᚒ‫ޔߪޘ‬Ge‫ޔ‬Sb ߇‫ޔ‬หߓන૏⢩ౝߢ೎‫ࠍ࠻ࠗࠨߩޘ‬භ᦭ߒߡ޿ࠆน⢻ᕈ‫ޔ‬ᚗ޿ߪ‫ޔ‬೎‫ޘ‬ߩන૏⢩ࠍᒻᚑߒߡ޿ࠆน⢻ᕈ‫ޔ‬හߜ‫ޔ‬Ge‫ޔ‬Sb ߇න৻⋧ߦ⚿᥏ൻߒߡ޿ࠆߩߢߪߥߊ‫౒ޔ‬᥏ࠍᒻᚑߒߡ޿ࠆน⢻ᕈߥߤࠍᬌ⸛ߒߚ‫ޕ‬㧔⸃ᨆㆊ⒟ߩ⹦⚦ߪ⋭⇛ߔࠆ߇㧕ߘߩ⚿ᨐ‫⹜ᧃ☳ߩߎޔ‬ᢱߪ‫ޔ‬A7 ဳන৻⋧ߦ⚿᥏ൻߒߡ޿ࠆߩߢߪߥߊ‫ࠇߙࠇߘޔ‬೎‫ ߩޘ‬A7 ဳ᭴ㅧࠍᒻᚑߒߚ‫౒ޔ‬᥏૕ߣߥߞߡ޿ࠆߣߩ⚿⺰ߦ⥋ߞߚ‫⸃ߩ⚳ᦨޕ‬ᨆ⚿ᨐࠍ
Fig.2 ਗ߮ Table 2 ߦ␜ߔ‫ޕ‬R ࿃ሶߪ‫ޔ‬model 1 ࠍ઒ቯߒߚߣ߈‫ޔ‬8.86 %ߢ޽ߞߚ߽ߩ߇‫ޔ‬6.09 %ㄥਅ߇ߞߚ‫ޕ‬Figure 2 ߦ⷗ࠄࠇࠆࠃ߁ߦ᷹ⷰᒝᐲ㧔ੑ૕ಽᏓ⋧㑐㑐ᢙ㧕ߣ‫▚⸘ޔ‬ᒝᐲߣߩ৻⥌߽‫ޔ‬㗓ࠆ⦟޿‫ޕ‬⃻ ࿷ ႎ ߓ ࠄ ࠇ ߡ ޿ ࠆ ⁁ ᘒ ࿑ [9] ߦ ࠃ ࠆ ߣ ‫ޔ‬
Ge-Sb ੑర♽ߪ‫⚵ోޔ߷߶ޔ‬ᚑ㗔ၞߦਗ਼ߞߡ‫ޔ‬࿕ṁߒߥ޿‫⁁ߩߎޕ‬ᘒ࿑ߦࠃࠆߣ‫੹ޔ‬࿁‫ޔ‬ታ㛎ߦ↪޿ߚ Ge0.135Sb0.865 ߪ‫ ߩߎޔ‬Sb-rich ߥ⚵ᚑߦ߅޿ߡ߽‫ޔ‬Ge ߪ‫ޔ‬Sb ߦ࿕ṁߖߕ‫ޔ‬diamond ᭴ㅧࠍ᦭ߒߚ Ge ߣ‫ޔ‬A7 ဳ᭴ㅧࠍ᦭ߒߚ Sb ߩੑ⋧߇౒ሽߒߚ‫౒ޔ‬᥏૕ߣߥࠆ╫ߢ޽ࠆ‫ߥߒ߆ߒޕ‬Fig. 2. Observed (+), calculated (thick grey line), and ߇ࠄ‫ࠍ⤑⭯ࠬࠔࡈ࡞ࡕࠕߚߒ⌕⫳࠲࠶ࡄࠬޔ‬⍍difference (thin line) pair distribution function㑆⊛ߥ࡟࡯ࠩ࡯ᾖ኿ߦࠃߞߡ⚿᥏ൻߐߖߚᧄ⹜
in the fitted range of 2.2 < r < 30.0 Å (83 K). Adifference curve (observedícalculated) appears ᢱߪ‫ޔ‬Ge ߣ Sb ߇‫ޔ‬೎‫ ߩޘ‬A7 ဳ᭴ㅧߦ⚿᥏ൻat the bottom of the figure. The program ߒ‫ߩࠄࠇߘޔ‬ੑ⋧౒ሽ⁁ᘒߣߥߞߡ޿ߚ‫ߩߎޕ‬᭽ߥ A7 ဳ᭴ㅧߦ⚿᥏ൻߒߚ Ge ߪ‫ޔ‬ᚒ‫ߩޘ‬⍮ࠆPDFFIT [7] was used for this PDF analysis.

㒢ࠅ‫ߦߢ߹ࠇߎޔ‬ႎ๔߇ή޿‫ ߩߎޕ‬A7-Ge ߦ㑐ߒ‫⸃ޔ‬ᨆߐࠇߚ᭴ㅧࡄ࡜ࡔ࡯࠲㧔a = 4.21882
Å‫ޔ‬c = 11.2500 Å‫ޔ‬z = 0.239665 / Table 2 ෳᾖ㧕ࠍ↪޿ߡ⁁ᘒኒᐲ㧔DOS / density of states㧕ࠍ╙৻ේℂ⸘▚[10]ߦࠃࠅ᳞߼ߡߺߚ‫⚿ޕ‬ᨐࠍ‫ޔ‬࿑㧔Fig. 3㧕ߦ␜ߔ‫ޕ‬DOS ߩࡄ࠲࡯ࡦߪ‫ޔ‬Sb߿ Bi‫ߪߦᦝޔ‬ⓨ㑆⟲ R-3m‫ޔ‬P-3m1 ߦ⚿᥏ൻߔࠆ‫ޔ‬GeTe-Sb2Te3‫ޔ‬Sb-Te‫ޔ‬Bi-Te ੑర♽ൻว‛ߩ߽ߩ[11, 12]ߣ㉃ૃߒߡ޿ࠆ‫ߩࠄࠇߎޕ‬ൻว‛ߪ‫ޔ‬ਥߦ p-p ⚿วߦࠃࠅ㓞ߩේሶߣ⚿วߒߡ߅ࠅ‫⁁ߩߘޔ‬ᘒኒᐲߪଔ㔚ሶᏪߣ‫ޔ‬વዉᏪߩ㑆ߦ⁜޿ࠡࡖ࠶ࡊ㧔࠺ࠖ࠶ࡊ㧕ࠍ߽ߞߚ‫ޔ‬
ඨ㊄ዻ‫ޔ‬ᚗ޿ߪ࠽ࡠ࡯ࠡࡖ࠶ࡊඨዉ૕ߦߥࠆ‫ޕ‬
Fig. 3. DOS diagrams for Ge0.135Sb0.865 obtained using
A7-Ge એᄖߩൻว‛ߢߪᐔဋߩଔ㔚ሶ㧔p 㔚band calculations. The Fermi level (HOMO)ሶ㧕ᢙ߇ 3 ߢ޽ࠅ‫ޔ‬p 㔚ሶߪଔ㔚ሶᏪࠍቢోcorresponds to 0 eV. Narrow band gaps can beߦḩߚߒߡ޿ࠆ㧔HOMO / highest occupied
seen between the valence and conduction bands
molecular orbital ߇ࠡࡖ࠶ࡊߦ૏⟎ߔࠆ㧕߇‫ޔ‬
at 1.8 eV.
Ge ߪߘࠇࠄࠃࠅ߭ߣߟ p 㔚ሶ߇ዋߥ޿ߚ߼‫ޔ‬࿑ߦⷰࠄࠇࠆࠃ߁ߦ‫ޔ‬p 㔚ሶߪ‫ޔ‬ଔ㔚ሶᏪߩਛㅜ߹ߢߒ߆ḩߚߔߎߣ߇ߢ߈ߥ޿‫ߎޔ߼ߚߩߘޕ‬ߩ A7 ဳߩ Ge ߪ‫ޔ‬㕖Ᏹߦ⦟޿㔚᳇વዉᕈࠍ᦭ߔࠆ߽ߩߣ⠨߃ࠄࠇࠆ‫੹ޕ‬࿁⷗಴ߒߚ‫ޔ‬㧔୘೎ߦ㧕
A7 ဳ᭴ㅧߦ⚿᥏ൻߒߚ Ge‫ޔ‬Sb ߩ౒Ⲣᷙว‛߽‫ޔ‬ᓢ‫ߦޘ‬᷷ᐲࠍ਄ߍߡࠁߊߣ‫ ⚂ޔ‬400K ߦߡ‫ޔ‬Geߪᧄ᧪ߩ࠳ࠗࠕࡕࡦ࠼᭴ㅧߦᄌൻߒߚ‫ޕ‬
Table 2. PDF Refinement results for Ge0.135Sb0.865 at 86 K performed by assuming that the Ge and Sb are
separately crystallized into A7-type structures. Space group is R-3m. Standard deviations areshown in parentheses. Final R-factor is Rwp = 6.09 %.
a = 4.17718 (1) Å and c = 11.3175 (1) ÅPhase #1

site

gxyz

U11(Å2)

U11(Å2)

Sb

6c

1.0

000.231898 (1)0.101742 (5)0.14961(16)a = 4.21882 (4) Å and c = 11.2500 (2) ÅPhase #2

site

gxyz

U11(Å2)

U11(Å2)

Ge6c

1.0

00

0.239665 (4)0.101742 (5)0.14961(16)੹ᓟߩ⺖㗴㧦
Rietveld ᴺߪ‫ޔ‬න⚿᥏ࠍᓧࠆߎߣ߇㔍ߒ޿᧚ᢱߦ㑐ߒߡ߽‫ᧃ☳ߩߘޔ‬࿁᛬࠺࡯࠲ࠍ᷹ቯߔࠆߎ
ߣ߇ߢ߈ࠆߥࠄ߫‫ޔ‬㜞♖ᐲߥ᭴ㅧ⸃ᨆࠍⴕ߃ࠆ㕖Ᏹߦ⚛᥍ࠄߒ޿⸃ᨆ࠷࡯࡞ߢ޽ࠆ‫߇ߥߒ߆ߒޕ‬ࠄ‫ޔ‬ᓸ⚦ߥ⚿᥏ሶ߆ࠄߥࠆⶄว᧚ᢱߩ႐ว‫߇ࠄࠇߘߦ․ޔ‬หߓ᭴ㅧߦ⚿᥏ൻߒߡ޿ࠆ႐วߪ‫ߘޔ‬ߩ᧚ᢱ߆ࠄᓧࠄࠇࠆ࿁᛬✢ߪ‫ޔ‬࿁᛬✢ห჻߇㉃ߊ㊀ⶄߒ‫ޔ‬ᬌ಴ེࠍᎿᄦߒߚ㜞ಽ⸃⢻᷹ቯߦࠃߞߡ߽‫ޔ‬ੑ⋧ࠍಽ㔌ߔࠆߩߪ࿎㔍ߣߥߞߡߊࠆߢ޽ࠈ߁‫੹ޕ‬࿁ߩ⎇ⓥߪ‫᧚ߥ߁ࠃߩߘޔ‬ᢱߢ޽ߞߡ߽‫ޔ‬PDF ⸃ᨆࠍ૬↪ߔࠆߎߣߦࠃߞߡ‫ޔ‬ੑ⋧ࠍ୘೎ߦ⸃ᨆߢ߈ࠆߎߣ߇␜ߐࠇߚ‫⃻ޕ‬࿷‫↥ޔ‬ቇࠍ໧ࠊߕ‫ޔ‬ᓸ⚦ߥ᧚ᢱࠍⶄวൻߐߖߚ‫ޔ‬ᚲ⻐࠽ࡁࠦࡦࡐࠫ࠶࠻ࠍᒻᚑߒߡ‫ޔ‬ᣂߚߥ․ᕈࠍ↥ߺ಴ߘ߁ߣᣣᄛ⎇ⓥ㐿⊒߇ㅴ߼ࠄࠇߡ޿ࠆ‫ߩߎޕ‬ႎ๔ߢ␜ߒߚ⸃ᨆᚻᴺߪ‫᧚ߥ߁ࠃߩߎޔ‬ᢱߩ᭴ㅧ⸃ᨆߦ‫᦭ޔ‬ലߦㆡ↪ߢ߈ࠆ߽ߩߣᦼᓙߐࠇࠆ‫ޕ‬ዏ‫᧚ߩߎޔ‬ᢱߩ⋧ᄌൻ᧚ᢱߣߒߡߩ᦭↪ᕈߦߟ޿ߡߪ‫ޔ‬⃻࿷‫․ࠬࠗࡃ࠺ޔ‬ᕈߣߩ㑐ࠊࠅߩߥ߆ߢ‫ޔ‬ᬌ⸛ࠍⴕߞߡ޿ࠆᦨਛߢ޽ࠆ‫ޕ‬ෳ⠨ᢥ₂㧦ᴾ[1] Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N., and Takao, M.; J. Appl. Phys. 69(5), 1 (1991),2849.
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