Application of HighThermoelectric-Power
Materials to Self-CoolingDevice
H. Nakatsugawa1, Y. Okamoto2, S. Yamaguchi3, T. Kawahara3
1Yokohama National University,
2National Defence Academy,
3Chubu University

The 3rd International Congress on Ceramics (ICC3) Symposium 9C: Ceramics for Electricity;
Direct Conversion Technology between Heat and Electricity, 14-18 November 2010 in OsakaIntroduction
heatgeneration

Si wafer (power device)currentn-type plate

waste
heat

heat spread by heatsink
heat release to air by fin or fan

heatflow

Uses heat flow by boththermal conduction andby Peltier heat for its
electric current.

self-cooling device
S.Yamaguchi, ULVAC, 52, 14 (2007)

CSiC●Si●Cu● AlAlN

Al2O3ZnO●GaN
Bi2Te3● Na CoO
0.52010110210thermal conductivity (W/mK)

310Experimental

Cu plate

Electron Probe Micro Analyzer (EPMA)

Si0.5mmcopper plating n-type Si (111) wafer

Cu
1-2μμmSielectrical resistivity
7010Seebeck coefficient
190100060Si

0.4μμm2500µ (cm /Vs)

3018S (µV/K)

3101μμm–1000

2018.8 mΩ
Ωcm100n (/cm )ρ (mΩcm)–50040Au－688μμV/K

50100200T (K)300

Ti
400–1500

100200T (K)3000400

Si0.1μμm

heat
generation

waste
heatheatsink

power MOSFET(IRF1324PbF)

copperplate

copper plating n-type Si (111) wafer
current

SDheatsink

waste
heat

S
Peltier effect + thermal conduciton

Schematic structure of self-cooling device

Results & Discussion
power MOSFET (IRF1324PbF)

thermocouple
heat
generation

Cu S
DGCu

CuCu
waste
heat

VGS = 10V
water cooled heatsink (10±±2℃℃)

I DS = 40A, 50A, 60A

temperature survey 150℃℃

40A50A×10℃℃

602060201000403010201010203040Time (min)5006000

Temperature (℃)×50
On–Resistance (mΩ)

Temperature (℃)

10On–Resistance (mΩ)

Temperature ( ℃)20

G–S : 10V
D–S : 60A

50

302060

G–S : 10V
D–S : 50A

50×10℃℃

10℃℃

G–S : 10V
D–S : 40A

4060A

×40×201030

1010203040Time (min)500600010203040Time (min)50060

On–Resistance (mΩ)

×50℃℃

50℃℃

self-cooling device 1
Sb doped n-type Si wafer
power MOSFET

thermocouple
heat
generation

Cu
current

Cu

Cu

Cu

Cu

water cooled heatsink (10±±2℃℃)
aluminaplate

waste
heat

VGS = 10V
I DS = 40A, 50A, 60A

temperature survey 2
50℃℃

50℃℃

50℃℃×××50A

10℃℃

60

2060

10×2030

10203040Time (min)5006000403010× 20
101010Temperature (℃)

40On–Resistance (mΩ)

20

Temperature (℃)

10On–Resistance (mΩ)

Temperature (℃)

4000505030

20
G–S : 10V
D–S : 60A

G–S : 10V
D–S : 50A

5010℃℃

60

20

G–S : 10V
D–S : 40A

×60A

10℃℃

10203040
Time (min)500600010203040
Time (min)50060

On–Resistance (mΩ)

40A

self-cooling device 2
copperplate
power MOSFETCu

Sb doped n-type Si wafer

thermocouple

current

Cu
waste
heat

Cu

Cu

water cooled heatsink (10±±2℃℃)
aluminaplate

VGS = 10V
I DS = 40A, 50A, 60A

temperature survey 350℃℃50℃℃×40A×50A

10℃℃
2060

60

20

G–S : 10V
D–S : 40A

10×2030

101010203040Time (min)5006000Temperature ( ℃)4050
On–Resistance (mΩ)

Temperature ( ℃)20

On–Resistance (mΩ)

Temperature ( ℃)

1030

20
G–S : 10V
D–S : 60A

504010℃℃

60

G–S : 10V
D–S : 50A

500060A

10℃℃

40×2030

101010203040Time (min)500600010203040
Time (min)50060

On–Resistance (mΩ)××50℃℃

Summary• The Sb doped n-type silicon (111) wafer has been
applied to the self-cooling device.
• The self-cooling device using the heat flux both by
Peltier effect and by thermal conduction has removed
the heat generation on the upper side of the power
MOSFET.
• In particular, the heat removal has been enhanced
drastically by the increase of the heat flux.

Acknowledgement
supported by the Grants-in-Aid for Scientific Research#22560691 from the Ministry of Education, Culture, Sports
and Technology of Japan.

Thank you for your attention.