SHF Communication Technologies AG
Wilhelm-von-Siemens-Str. 23 • 12277 Berlin • Germany
Phone ++49 30 / 772 05 10 • Fax ++49 30 / 753 10 78
E-Mail: sales@shf.de • Web: http://www.shf.deDatasheet
SHF 810
Broadband Amplifier

Specifications – SHF 810(Typical Data at 35°C case temperature (T C), unless otherwise specified)Parameter
SymbolUnitMin
TypMaxHigh frequency 3 dB point
fHIGH
GHz3840
Low frequency 3 dB point
fLOWkHz40Gain
GpdB2829
Output voltage adjust
VoltageUgc
V0-5CurrentIgc
mA0-50
Crossing controlVoltage
V-77
Internal resistanceΩ500
Gain ripple∆GpdB±1±1.5
Noise figure
NFdB6Group delay
ps±50
Temperature coefficient
Output power at 1 dBcompression
Output power at 2 dBcompression

Tc
P01dB

Output power at 3 dBcompression

P03dB

P02dB

Jitter

dB/°C
dBm
(V)
dBm
(V)
dBm
(V)
fs

Input return loss

S11dB

Output return loss
Maximum input power

S22dBdBm

Rise time/fall time
Supply voltage

tr/tf

psV

5.2

W

2.44-15750
600-12-10-1041099

Input connectorOutput connector
Dimensions

inverting, AC-coupled
reduces gain by up to~3 dB / reduces output
voltage by 2 V
adjusts crossing point
between 42…58%

at 5 GHz>5GHz, <40GHz
with 100 MHz aperture-0.05
18 (5.1)
17 (4.6)
19 (5.7)
18 (5.1)
20 (6.3)
19 (5.7)550

Power consumption

Conditions

mm<10 GHz<20 GHz<10 GHz<20 GHz<10 GHz<20 GHzon scope display
deconvoluted
in the output range
between 4 and 6.5 V<10 GHz<40 GHz<40 GHz
in operation
without power supply
20%...80%
0.47 A, reverse
voltage protectedusing 5.2 V supply
voltage
1.85 mm female (Vcompatible)
1.85 mm male (Vcompatible)
51x35x13.5
excluding connectors

The SHF 810 is a modulator driver which conforms to OC-768 and combines high performance with ease ofuse; a single power supply is all that is needed for operation. This three stage amplifier is based on special
designed monolithic microwave integrated circuits (MMICs) to achieve ultra wide bandwidth and low noise
performance.
A voltage regulator IC makes the amplifier insensitive to reverse voltage and line ripple.
SHF reserves the right to change specifications and design without notice – SHF 810 – v002 – 26/Feb/2007

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S-Parameters, group delay and phase response at maximum gain

Aperture of group delay measurement: 100MHz

SHF reserves the right to change specifications and design without notice – SHF 810 – v002 – 26/Feb/2007

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Eye diagram at 44 GBit/s
Input signal: 333 mVpp , 323 fs

Output signal: 6.11 Vpp , 594 fs

Eye diagram at 2.5 GBit/s
Input signal: 355 mVpp , 960 fs

Ouput signal: 6.19 Vpp , 980 fs

Eye diagrams measured with:
Digital Communications Analyzer
AGILENT 86100B with 86118A Sampling-Head-Module (70GHz) and 86107A Precision-Time-Base-Module.
Signal source (Generator):
SHF BPG44
Measurement setup:
50cm Sucoflex 102EA + 6dB V-Gold attenuator between the generator and the SHF 810 input.
10dB + 20dB V-Gold attenuator before the sampling head input.

SHF reserves the right to change specifications and design without notice – SHF 810 – v002 – 26/Feb/2007

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Low frequency response (<1 MHz)

Saturation power

3dB compression
2dB compression
1dB compression

SHF reserves the right to change specifications and design without notice – SHF 810 – v002 – 26/Feb/2007

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4,87,15

4,916,542
Left view Available Options
01: DC return on input(max. ±1.75 V, max. 35 mA)

Powersupply

11,3

Output adjust
0 ... -5 V

4,97

Input

Crossing
Control-7 V ... + 7 V

MT: Special tuning available to optimize
performance with E/O modulators
Positive gain slope of up to +3 dB possible

16,535Top view

04: Built-in bias tee on output(max. ±12 V, max. 220 mA)

Bias-T(Optional)

03: DC return on output(max. ±1.75 V, max. 35 mA)

Output7912,2

02: Built-in bias tee on input(max. ±12 V, max. 220 mA)

42For other configurations please contact us.

4,8
7,15
10,6
13,5

The following options cannot be combined:
01 and 02
03 and 04
02 and 04

Right view

MP: Matches the phase of two amplifiers

3151
48

332

Bottom view

M2,5x5 (4x)

SHF reserves the right to change specifications and design without notice – SHF 810 – v002 – 26/Feb/2007

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User Instructions
ATTENTION !
Electrostatic sensitive GaAs FET amplifier1.

To prevent damage through static charge build up, cables should be always discharged before
connecting them to the amplifier!

2.

Attach a 50 Ohm output load before supplying DC power to the amplifier!

3.

The supply voltage can be taken from any regular 5.2…9 V, 1 A DC power supply and can beconnected to the supply feed-through filter via an ON / OFF switch.

4.

The minimum supply voltage is 5.2 V. A higher one increases the power dissipation of the internal
voltage stabilizer.

5.

Using a 3 dB or 6 dB input attenuator will result in a 6 dB or 12 dB increase of the input returnloss. For minimal degradation of amplifier rise time, these attenuators should have a bandwidth
specification of greater 50 GHz (V/ 1.85mm attenuators)!

6.

An input signal of about 0.33 Vpp equivalent to -6 dBm will produce saturated output swing ofapprox. 6Vpp.

7.

Higher input voltages will drive the amplifier’s output stage into saturation, leading to waveformpeak clipping.

8.

Saturated output voltages can only be used between 10 MHz and 40 GHz without damage while
the amplifier is connected to a 50 Ohm precision load with a VSWR of less than 1.2 or better than
20 dB return loss up to 26 GHz.

9.

While using a reflective load the output voltage has to be reduced to a safe operating level below
6.5 Vpp according to the magnitudes of the reflections.
ATTENTION: At frequencies up to 20 GHz a capacitive load can be trans-formed to an inductive
one through transmission lines! With an output stage driven into saturation this may lead to theimmediate destruction of the amplifier (within a few ps)!

10. The input voltage should never be greater than 1 Vpp equivalent to 4 dBm input power.
The input voltage without DC power supplied to the amplifier should never be greater than 2 Vppequivalent to 10 dBm input power.
11. Hint: Pulse shape tuning of the amplifier has been performed after warm up at about 35°C casetemperature. Slightly more over and undershoot will be present at low temperature!

SHF reserves the right to change specifications and design without notice – SHF 810 – v002 – 26/Feb/2007

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