SHF Communication Technologies AGWilhelm-von-Siemens-Str. 23D • 12277 Berlin • Germany
Phone ++49 30 / 772 05 10 • Fax ++49 30 / 753 10 78
E-Mail: sales@shf.de • Web: http://www.shf.deDatasheet
SHF 806 E

SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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Description
The SHF 806 E is a modulator driver which conforms to OC-768. Together with high performance, theamplifier is extremely easy to use: a single power supply is all that is needed for operation.
A three stage amplifier design is employed using special monolithic microwave integrated circuits(MMICs) inside special carriers to achieve ultra wide bandwidth and low noise performance. The custom
made MMIC carrier is optimized for good input return loss between its interior and the 50 Ohm outside
hybrid technology. The computer optimized broadband circuit is individually tuned for minimum pass bandripple. A voltage regulator IC makes the amplifier insensitive to reverse voltage and line ripple.

Applications•Optical Communications•

High-Speed Pulse Experiments•

Satellite Communications•Research and Development•Antenna Measurements•

Data Transmission

Available Options•

01: DC return on input•

02: Built-in bias tee on input•

03: DC return on output•

04: Built-in bias tee on output•

MT: Special tuning available to optimize performance with E/O modulators
Positive gain slope of up to +3 dB possible•

MP: Matches the phase of two amplifiers

The following options cannot be combined:
01 and 02
03 and 04
02 and 04

SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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Electrical characteristics
Parameter

Symbol

Units

fHIGH

GHz

fLOWkHz

High Frequency 3 dB point
High Frequency 6 dB point
Low Frequency 3 dB point

Min.

Typ.

38424550

Max.

Conditions

40

Gain

dB

25

Gain control voltage

V0Gain ripple

dB

26

±127

inverting–5

reduces gain by up to 3 dB

±1.5

Output power at 1dBcompression

P01dB

dBm

2018

<25 GHz<35 GHz

Output power at 2 dBcompression

P02dB

dBm

2119

<25 GHz<35 GHz

Output power at 3 dBcompression

P03dB

dBm

2220

<25 GHz<35 GHz

Jitter (RMS)

fs

Input return lossS11Output return loss

S22

Maximum input power
Rise time / Fall time

–15

dBm
tr/tf

ps

Supply voltage

VPower consumption

W

895.85800

output in range 5…6 V

–12
–10

<10 GHz<35 GHz–10<35 GHz4in operation

10without power supply
1020% to 80%

120.65 A, reverse voltage
protectedusing 9V supply voltage

Input connector

1.85 mm female

Output connector

1.85 mm male
59 x 144 x 40 incl.
connectors and heatsink

Dimensions (L x W x H)

mm51 x 35 x 13.5 without
connectors and heatsink

SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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S-Parameters

Aperture of Group Delay measurement: 400 MHz

SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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Eye diagrams at 44 GBit/s

Input signal amplitude: 190 mV

Output signal amplitude: 4.3 V

Input signal amplitude: 300 mV

Output signal amplitude: 6.1 V

Input signal amplitude: 420 mV

Output signal amplitude: 7.0 V

SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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Eye diagrams at 2.5 GBit/s

Input signal amplitude: 200 mV

Output signal amplitude: 4.5 V

Input signal amplitude: 330 mV

Output signal amplitude: 6.8 V

Input signal amplitude: 470 mV

Output signal amplitude: 7.5 V

SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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Jitter measurements at 44 GBit/s
Measured with 50 GHz sampling module and standard timebase

Jitter: 812 fs

Jitter: 1110 fs

Measured with 63 GHz sampling module and precision timebase.

Jitter: 308 fs

Jitter: 639 fs

The specification for jitter is based on the measurement using the 63 GHz sampling module and precision
timebase. The figure (<800 fs) is not deconvoluted from the total system jitter; it is the displayed figure on theoscilloscope for the whole system (multiplexer, amplifier, sampling head and oscilloscope). It is taken at anoutput level between 5 and 6 V, which is relevant for most applications.
Using a standard timebase and 50 GHz sampling module, we specify a maximum jitter figure of 1.25 ps.

SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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Rise/Fall times
Input signal

7 V output from SHF 806 E

14.7 ps

Measured from 10% to 90%

13.1 ps

10.0 ps

Measured from 20% to 80%

8.9 psLow frequency response (<500 kHz)SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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Saturation power
Output Power versus Frequency
Black: 1dB compression; Red: 2 dB compression; Blue: 3 dB compression

Output power (dBm)

2322212019180510152025303540

Frequency (GHz)

Gain reduction function

SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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59,1143,6136,9SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

All dimensions in mm

18,837,5

Bottom view

4,916,54251

40

12,916,35
18,723,5

Right view

Input

712,37

Input Bias-T(Optional)

GainControl

35PowersupplyTop view

7912,35

OutputOutput Bias-T(Optional)

16,35
18,723,5

Left view

4,916,542

Mechanical drawing with Heatsink

M4 (2x)Thermal resistance of heatsink approx 1.6 K/W

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Powersupply
Output adjust
0 ... -5 V

4.942

12.37
4.8
7.15
10.6
13.5

Right view

7Input16.5

Crossing
Control-7 V ... + 7 V

35

Top view

Bias-T(Optional)

Output7912.35

Left view

4.8
7.15

4.942

16.5

Mechanical drawing without Heatsink

3151
48

332

Bottom view

M2.5x5 (4x)For permanent mounting, remove the heatsink from the amplifier. In that case, ensure that adequate coolingof the amplifier is guaranteed.
To remove the heatsink from the amplifier, unscrew the four screws on the heatsink.
SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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User Instructions
ATTENTION !
ELECTROSTATIC SENSITIVE GaAs FET AMPLIFIER
1.

To prevent damage through static charge build up, cables should be always discharged
before connecting them to the amplifier!

2.

Attach a 50 Ohm output load BEFORE supplying DC power to the amplifier!

3.

The supply voltage can be taken from any regular 9…12V, 1A DC power supply and canbe connected to the supply feed-through filter via an ON / OFF switch.

4.

The minimum supply voltage is 9V. A higher one increases the power dissipation of theinternal voltage stabilizer.

5.

Using a 3 dB or 6 dB input attenuator will result in a 6 dB or 12 dB increase of the input
return loss. For minimal degradation of amplifier rise time these attenuators should havea bandwidth specification of greater 50 GHz (V/ 1.85mm or 2.4mm - attenuators) !

6.

An input signal of about 0.7 Vpp equivalent to 1 dBm will produce the full swing output of8 Vpp .

7.

Higher input voltages will drive the amplifier’s output stage into saturation, leading towaveform peak clipping.

8.

Saturated output voltages can only be used between 10 MHz and 40 GHz without
damage while the amplifier is connected to a 50 Ohm precision load with a VSWR of lessthan 1.2 or better than 20 dB return loss up to 26 GHz.
Thus the amplifier will tolerate an overdrive of 6 dB resulting in 0.5Vpp equivalent to -2dBm at the input from a CW generator having 50 Ohm output resistance and less than
1.2 VSWR. In this case, the amplifier output will be close to 8 V.

9.

While using a reflective load the output voltage has to be reduced to a safe operatinglevel below 8 Vpp according to the magnitudes of the reflections.
ATTENTION: At frequencies up to 20 GHz a capacitive load can be trans-formed to aninductive one through transmission lines! With an output stage driven into saturation
this may lead to the immediate destruction of the amplifier (within a few ps)!

10. The input voltage should never be greater than 1 Vpp equivalent to 4 dBm input power.
The input voltage without DC power supplied to the amplifier should never be greaterthan 2 Vpp equivalent to 10 dBm input power.
11. Hint: Pulse shape tuning of the amplifier has been performed after warm up at about
40°C case temperature. Considerably more over and u ndershoot will be there at low
temperature!

SHF reserves the right to change specifications and design without notice – SHF 806E - V002 – 27.08.2009

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