NSI45090JDT4G
Adjustable Constant Current
Regulator & LED Driver
45 V, 90 − 160 mA + 15%, 2.7 W Package
The adjustable constant current regulator (CCR) is a simple,
economical and robust device designed to provide a cost effective
solution for regulating current in LEDs (similar to Constant Current
Diode, CCD). The CCR is based on Self-Biased Transistor (SBT)technology and regulates current over a wide voltage range. It is
designed with a negative temperature coefficient to protect LEDs fromthermal runaway at extreme voltages and currents.
The CCR turns on immediately and is at 20% of regulation with
only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher
currents by attaching a resistor between Radj (Pin 3) and the Cathode(Pin 4). The Radj pin can also be left open (No Connect) if noadjustment is required. It requires no external components allowing it
to be designed as a high or low−side regulator. The high anodecathode voltage rating withstands surges common in Automotive,
Industrial and Commercial Signage applications. This device isavailable in a thermally robust package and is qualified to stringent
AEC−Q101 standard, which is lead-free RoHS compliant and uses
halogen-free molding compound, and UL94−V0 certified.

http://onsemi.com

Ireg(SS) = 90 − 160 mA@ Vak = 7.5 V
Anode
1

3
Radj
4
Cathode4
1 2

Features• Robust Power Package: 2.7 Watts• Adjustable up to 160 mA• Wide Operating Voltage Range• Immediate Turn-On• Voltage Surge Suppressing − Protecting LEDs
• AEC-Q101 Qualified and PPAP Capable, UL94−V0 Certified• SBT (Self−Biased Transistor) Technology• Negative Temperature Coefficient• Eliminates Additional Regulation• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant

3
DPAK
CASE 369C

MARKING DIAGRAM
A
Radj

1
YWW
NSI
90JG

C

Y
= YearWW= Work Week
NSI90J = Specific Device CodeG
= Pb−Free Package

Applications• Automobile: Chevron Side Mirror Markers, Cluster, Display &Instrument Backlighting, CHMSL, Map Light• AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering• Switch Contact Wetting• Application Note AND8391/D − Power Dissipation Considerations• Application Note AND8349/D − Automotive CHMSL© Semiconductor Components Industries, LLC, 2011

October, 2011 − Rev. 1

1

ORDERING INFORMATION
DevicePackage

Shipping†

NSI45090JDT4GDPAK(Pb−Free)

2500/Tape & Reel

†For information on tape and reel specifications,
including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Publication Order Number:
NSI45090JD/D

NSI45090JDT4G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
RatingSymbolValue

Vak Max

45

V

VR

500

mV

Operating and Storage Junction Temperature Range

TJ, Tstg−55 to +150

ESD Rating:

ESD

Anode−Cathode Voltage
Reverse Voltage
Human Body Model
Machine Model

Unit

°C

Class 3A (4000 V)
Class B (200 V)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affectdevice reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

Steady State Current @ Vak = 7.5 V (Note 1)

Ireg(SS)

76.5

90

103.5

mA

Voltage Overhead (Note 2)

Voverhead
86.2

103

119.6

mA

1.8

V

Pulse Current @ Vak = 7.5 V (Note 3)

Ireg(P)

Capacitance @ Vak = 7.5 V (Note 4)

C

17

pF

Capacitance @ Vak = 0 V (Note 4)

C

70

pF

1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 80 sec, using FR−4 @ 300 mm2 2 oz. Copper traces, in still air.
2. Voverhead = Vin − VLEDs. Voverhead is typical value for 65% Ireg(SS).
3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 1 msec.
4. f = 1 MHz, 0.02 V RMS.

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

PD

1771
14.16

mW
mW/°C

Thermal Resistance, Junction−to−Ambient (Note 5)

RθJA

70.6

°C/W

Thermal Reference, Junction−to−Lead 4 (Note 5)

RψJL4

6.8

°C/W

Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C

PD

2083
16.67

mW
mW/°C

Thermal Resistance, Junction−to−Ambient (Note 6)

Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C

RθJA

60

°C/W

Thermal Reference, Junction−to−Lead 4 (Note 6)

RψJL4

6.3

°C/W

Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C

PD

2080
16.64

mW
mW/°C

Thermal Resistance, Junction−to−Ambient (Note 7)

RθJA

60.1

°C/W

Thermal Reference, Junction−to−Lead 4 (Note 7)

RψJL4

6.5

°C/W

Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C

PD

2441
19.53

mW
mW/°C

Thermal Resistance, Junction−to−Ambient (Note 8)

RθJA

51.2

°C/W

Thermal Reference, Junction−to−Lead 4 (Note 8)

RψJL4

5.9

°C/W

Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C

PD

2309
18.47

mW
mW/°C

Thermal Resistance, Junction−to−Ambient (Note 9)

RθJA

54.1

°C/W

Thermal Reference, Junction−to−Lead 4 (Note 9)

RψJL4

6.2

°C/W

Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C

PD

2713
21.71

mW
mW/°C

Thermal Resistance, Junction−to−Ambient (Note 10)

RθJA

46.1

°C/W

Thermal Reference, Junction−to−Lead 4 (Note 10)

RψJL4

5.7

°C/W

Junction and Storage Temperature Range

TJ, Tstg−55 to +150

°C

NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empiricalmeasurements and method of attachment.
5. FR−4 @ 300 mm2, 1 oz. copper traces, still air.
6. FR−4 @ 300 mm2, 2 oz. copper traces, still air.
7. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
8. FR−4 @ 500 mm2, 2 oz. copper traces, still air.
9. FR−4 @ 700 mm2, 1 oz. copper traces, still air.
10. FR−4 @ 700 mm2, 2 oz. copper traces, still air.

http://onsemi.com
2

NSI45090JDT4G
TYPICAL PERFORMANCE CURVES

110
100
90
80
70
60
50
40
30
20
10
0
−10
−20
−10

TA = 25°C, Radj = Open
0

10

20

30

40

60

50

TA = 25°C

80

TA = 85°C[ −0.223 mA/°C
typ @ Vak = 7.5 V

70[ −0.144 mA/°C
typ @ Vak = 7.5 V

TA = 125°C

6050[ −0.155 mA/°C
typ @ Vak = 7.5 V

40
30
20
10
0

DC Test Steady State, Still Air, Radj = Open
0

1

3

2

4

5

6

7

9

8

10

Vak, ANODE−CATHODE VOLTAGE (V)Figure 1. General Performance Curve for CCR

Figure 2. Steady State Current (Ireg(SS)) vs.
Anode−Cathode Voltage (Vak)
Ireg(SS), STEADY STATE CURRENT (mA)Vak @ 7.5 V
TA = 25°C
Radj = Open

100

105
TA = 25°C
Radj = Open

100
95
90

Non−Repetitive Pulse Test
4.0

5.0

6.0

7.0

8.0

9.0

10

95
90
85
80
75
85

90

95

100

105

110

115

Vak, ANODE−CATHODE VOLTAGE (V)

Ireg(P), PULSE CURRENT (mA)

Figure 3. Pulse Current (Ireg(P)) vs.
Anode−Cathode Voltage (Vak)Figure 4. Steady State Current vs. Pulse
Current Testing

120

160

Ireg(SS), STEADY STATE CURRENT (mA)

Ireg(P), PULSE CURRENT (mA)

90

105

85
3.0

Ireg, CURRENT REGULATION (mA)

TA = −40°C

100

Vak, ANODE−CATHODE VOLTAGE (V)

110

104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89

110

Ireg(SS), STEADY STATE CURRENT (mA)

Ireg, CURRENT REGULATION (mA)

Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air

Vak @ 7.5 V
TA = 25°C
Radj = Open

Vak @ 7.5 V
TA = 25°C

150
140
130
120
110

100

0

10

20

30

40

50

60

70

80

90

90
80

1

10

100

TIME (s)Radj (W), Max Power 125 mW

Figure 5. Current Regulation vs. Time

Figure 6. Ireg(SS) vs. Radj

http://onsemi.com
31000

POWER DISSIPATION (mW)NSI45090JDT4G
4200
700 mm2/2 oz
3900
3600
500 mm2/2 oz
3300
3000
2700
300 mm2/2 oz
2400
2100
1800 700 mm2/1 oz
1500
1200
500 mm2/1 oz
900
600
300 mm2/1 oz
300
40
100
−40 −20
0
20
60
80

120

TA, AMBIENT TEMPERATURE (°C)

Figure 7. Power Dissipation vs. Ambient
Temperature @ TJ = 1505C

APPLICATIONS INFORMATIONThe CCR is a self biased transistor designed to regulate thecurrent through itself and any devices in series with it. The
device has a slight negative temperature coefficient, asshown in Figure 2 – Tri Temp. (i.e. if the temperature
increases the current will decrease). This negative
temperature coefficient will protect the LEDS by reducing
the current as temperature rises.
The CCR turns on immediately and is typically at 20% of
regulation with only 0.5 V across it.
The device is capable of handling voltage for shortdurations of up to 45 V so long as the die temperature does
not exceed 150°C. The determination will depend on thethermal pad it is mounted on, the ambient temperature, thepulse duration, pulse shape and repetition.
Single LED String

The CCR can be placed in series with LEDs as a High Sideor a Low Side Driver. The number of the LEDs can varyfrom one to an unlimited number. The designer needs tocalculate the maximum voltage across the CCR by taking the
maximum input voltage less the voltage across the LED
string (Figures 8 and 9).

Figure 8.

http://onsemi.com
4

NSI45090JDT4G

Figure 10.

Figure 9.
Higher Current LED Strings

Two or more fixed current CCRs can be connected inparallel. The current through them is additive (Figure 10).

http://onsemi.com
5

NSI45090JDT4G
Other Currents

LEDs on and off for a portion of a single cycle. This on/off
cycle is called the Duty cycle (D) and is expressed by theamount of time the LEDs are on (Ton) divided by the total
time of an on/off cycle (Ts) (Figure 13).

The adjustable CCR can be placed in parallel with anyother CCR to obtain a desired current. The adjustable CCR
provides the ability to adjust the current as LED efficiency
increases to obtain the same light output (Figure 11).

Figure 13.

The current through the LEDs is constant during the period
they are turned on resulting in the light being consistent withno shift in chromaticity (color). The brightness is in proportion
to the percentage of time that the LEDs are turned on.
Figure 14 is a typical response of Luminance vs Duty Cycle.
6000

ILLUMINANCE (lx)

5000
4000

Figure 11.

3000

Dimming using PWM

The dimming of an LED string can be easily achieved byplacing a BJT in series with the CCR (Figure 12).

2000
Lux
Linear

1000
0
0

10

20

30

40 50
60 70
DUTY CYCLE (%)

80

90 100Figure 14. Luminous Emmitance vs. Duty Cycle
Reducing EMI

Designers creating circuits switching medium to highcurrents need to be concerned about Electromagnetic
Interference (EMI). The LEDs and the CCR switch
extremely fast, less than 100 nanoseconds. To help eliminate
EMI, a capacitor can be added to the circuit across R2.
(Figure 12) This will cause the slope on the rising and fallingedge on the current through the circuit to be extended. The
slope of the CCR on/off current can be controlled by thevalues of R1 and C1.
The selected delay / slope will impact the frequency thatis selected to operate the dimming circuit. The longer thedelay, the lower the frequency will be. The delay time should
not be less than a 10:1 ratio of the minimum on time. The
frequency is also impacted by the resolution and dimming
steps that are required. With a delay of 1.5 microseconds on
the rise and the fall edges, the minimum on time would be
30 microseconds. If the design called for a resolution of 100
dimming steps, then a total duty cycle time (Ts) of 3
milliseconds or a frequency of 333 Hz will be required.

Figure 12.

The method of pulsing the current through the LEDs isknown as Pulse Width Modulation (PWM) and has become
the preferred method of changing the light level. LEDs beinga silicon device, turn on and off rapidly in response to thecurrent through them being turned on and off. The switchingtime is in the order of 100 nanoseconds, this equates to a
maximum frequency of 10 Mhz, and applications will
typically operate from a 100 Hz to 100 kHz. Below 100 Hz
the human eye will detect a flicker from the light emitted
from the LEDs. Between 500 Hz and 20 kHz the circuit may
generate audible sound. Dimming is achieved by turning the

http://onsemi.com
6

NSI45090JDT4G
Thermal Considerations

P D(MAX) +As power in the CCR increases, it might become
necessary to provide some thermal relief. The maximum
power dissipation supported by the device is dependent
upon board design and layout. Mounting pad configurationon the PCB, the board material, and the ambient temperature
affect the rate of junction temperature rise for the part. Whenthe device has good thermal conductivity through the PCB,
the junction temperature will be relatively low with highpower applications. The maximum dissipation the device
can handle is given by:

T J(MAX) * T A
R qJA

Referring to the thermal table on page 2 the appropriate
RqJA for the circuit board can be selected.
AC Applications

The CCR is a DC device; however, it can be used with fullwave rectified AC as shown in application notes
AND8433/D and AND8492/D and design notes
DN05013/D and DN06065/D. Figure 15 shows the basic
circuit configuration.

Figure 15. Basic AC Application

http://onsemi.com
7

NSI45090JDT4G
PACKAGE DIMENSIONSDPAK (SINGLE GAUGE)CASE 369C
ISSUE D

A

E
b3

c2

B

D
1

L4

A

4

L3

b2
e

2

3

NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLDFLASH, PROTRUSIONS, OR BURRS. MOLDFLASH, PROTRUSIONS, OR GATE BURRS SHALLNOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.

CZ
HDETAIL A

DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z

c

b

H

0.005 (0.13) M C
GAUGE
L2 PLANEC SEATING
PLANE
L

A1

L1
DETAIL A

ROTATED 905 CW

INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050−−− 0.040
0.155
−−−

MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−

RECOMMENDED FOOTPRINT
6.20
0.244

2.58
0.101

5.80
0.228

3.0
0.118

1.6
0.063

6.172
0.243

SCALE 3:1

mm Ǔǒinches

ON Semiconductor andare registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com

N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850

http://onsemi.com
8

ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative

NSI45090JD/D