DMP3017SFK
P-CHANNEL ENHANCEMENT MODE MOSFETFeatures and Benefits

V(BR)DSSRDS(on)max-30V

14mΩ @ VGS = -10V
25mΩ @ VGS = -4.5VID
TA = +25°C-10.4A-7.8A

Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,

Low On-Resistance
Low Input Capacitance
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

making it ideal for high efficiency power management applications.

Mechanical DataApplications
Load Switch
Power Management Functions
DC-DC Converters

Case: U-DFN2523-6
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — NiPdAu over Copper Leadframe. Solderableper MIL-STD-202, Method 208 e4

Weight: 0.008 grams (Approximate)

DU-DFN2523-6
Pin 1GPin 1, 2 = Source
Pin 3 = GatePin 4, 5, 6 = Drain

Gate Protection
Diode

ESD PROTECTED

S

Equivalent Circuit

Bottom View

Ordering Information (Note 4)
Part Number
DMP3017SFK-7
DMP3017SFK-13
Notes:Case
U-DFN2523-6
U-DFN2523-6

Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information
U-DFN2523-6

P7Date Code KeyYear
CodeMonthCode2014
BJan12015
CFeb
2

DMP3017SFKDocument number: DS37310 Rev. 4 - 2Mar
3P7 = Product Type Marking CodeYM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)

YM

ADVANCE INFORMATIONNEW PRODUCTProduct Summary

2016
DApr4May
52017
EJun62018
FJul
7

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Aug
82019
GSep
9OctO

2020
HNovNDec
DMay 2015© Diodes Incorporated

DMP3017SFKMaximum Ratings (@TA = +25°C, unless otherwise specified.)
CharacteristicSymbol

ADVANCE INFORMATIONNEW PRODUCTDrain-Source Voltage

VDSS
VGSS

Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -10V

SteadyState

Continuous Drain Current (Note 6) VGS = -4.5V

SteadyStateTA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C

Value-30Units
V±25V

ID

-10.4-8.3AID-7.8-6.2

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS-3

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

-80

AIAS

-14

A

EAS

104

mJ

SymbolValue
1Units
W°C/W

Avalanche Current (Note 7)
Avalanche Energy (Note 7)

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)PD

Thermal Resistance, Junction to Ambient (Note 5)

RJA
PD

123

Total Power Dissipation (Note 6)

2.2

W

Thermal Resistance, Junction to Ambient (Note 6)RJA55°C/W

Total Power Dissipation (Note 6)

PD

17W

RJC

7.2°C/W

TJ, TSTG-55 to +150°C

TC = +25°C

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown VoltageSymbol

Min

TypMax

Unit

BVDSS

-30

——

V

VGS = 0V, ID = -10mA

——-1

—

—-100

µA

VDS = -24V, VGS = 0V——±10µA

VGS = ±25V, VDS = 0V

VGS(th)-1-2.514

VDS = VGS, ID = -250μA

RDS(ON)

-1.6
9.5

V——

1525

Diode Forward Voltage

VSD—-0.7-1.2

V

VGS = -4.5V, ID = -6.9A
VGS = 0V, IS = -1A

On State Drain Current (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

ID(ON)-20——A

VDS ≦-5V, VGS = -10V

Ciss

—

2207

4414

Output Capacitance

Coss—

390

780

pF

Reverse Transfer Capacitance
Gate Resistance

Crss—

686

Rg

VDS = 0V, VGS = 0V, f = 1MHzQg
Qg

42.72090Ω

Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge——343
8.4

VDS = -15V, VGS = 0V,
f = 1MHznC

VDS = -15V, ID = -9.5A

ns

VDD = -15V, VGS = -10V,
RGEN = 6Ω, ID = -9.5A

Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance

IDSS
IGSS—

21.6

45Qgs

—

7.9

16

Gate-Drain Charge

Qgd—10Turn-On Delay Time
Turn-On Rise TimetD(on)

—

2015

tr
tD(off)

—
—

7.35
16.4

Turn-Off Fall Timetf

Reverse Recovery Timetrr

Reverse Recovery Charge

Qrr

Turn-Off Delay Time

Notes:mΩ

67.230110

——

37.5

60

18.635ns

—

8.6

17.5

nC

Test Condition

VGS = -10V, ID = -9.5A

IS = -9.5A, di/dt = 100A/μs

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7. UIS in production with L = 1mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.

DMP3017SFKDocument number: DS37310 Rev. 4 - 2

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DMP3017SFK30

30.0

VGS = -10V

25

VGS = -4.0V

20.0-ID, DRAIN CURRENT (A)-ID, DRAIN CURRENT (A)25.0

VGS = -3.5V
VGS = -3.0V

15.0

10.05.0201510TA = 150C5VGS = -2.5V

TA = 125C0.001234-VDS, DRAIN -SOURCE VOLTAGE (V)Figure 1 Typical Output Characteristics

R DS(ON), DRAIN-SOURCE ON-RESISTANCE ()0.018
VGS = -4.5V

0.014
0.012
VGS = -10V

0.01
0.008
0.006
0.004
0.002
00510152025-ID, DRAIN SOURCE CURRENT (A)Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage

DMP3017SFKDocument number: DS37310 Rev. 4 - 2050.02

0.016

TA = 85C
TA = 25CT A = -55C

VGS = -2.2V

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()ADVANCE INFORMATIONNEW PRODUCTVDS = -5.0V

3000.5

1 1.5 2 2.5 3 3.5 4 4.5-V GS, GATE-SOURCE VOLTAGE (V)Figure 2 Typical Transfer Characteristics

50.2
ID = -9.5A

0.18
0.16

ID = -6.9A

0.14
0.12
0.1
0.08
0.06
0.04
0.02
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05101520-VGS, GATE SOURCE VOLTAGE (V)Figure 4 Typical Transfer Characteristics

25May 2015
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VGS = -10V

0.018

R DS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )

0.02

TA = 150C0.016
TA = 125C0.014
TA = 85C0.012
T A = 25C

0.010.008

TA = -55C0.006
0.004

1.61.4

VGS = -4.5V
ID = -5A

1.2

10.8

0.002
00510152025-ID, DRAIN SOURCE CURRENT (A)Figure 5 Typical On-Resistance vs.
Drain Current and Temperature

0.6-50-250255075 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature

3030.03

2.8VGS(TH), GATE THRESHOLD VOLTAGE (V)RDS(on), DRAIN-SOURCE ON-RESISTANCE ()

0.025

0.02
VGS = -4.5V
ID = -5A

0.015

0.01

0.005

2.62.42.221.6
1.4-ID = 250µA

1.210.8
0.6
0.4
0.20-5030-I D = 1mA

1.80-50-2502550
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature-2502550
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature

10000

20TA= 150C15TA= 125C

10TA= 85CT A= 25C

TA= -55C5000.30.60.91.2
1.5-VSD, SOURCE-DRAIN VOLTAGE (V)Figure 9 Diode Forward Voltage vs. Current

DMP3017SFKDocument number: DS37310 Rev. 4 - 2

CT, JUNCTION CAPACITANCE (pF)f = 1MHz

25-IS, SOURCE CURRENT (A)ADVANCE INFORMATIONNEW PRODUCTDMP3017SFK
1.8Ciss

1000

CossCrss

100

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0510152025-VDS, DRAIN-SOURCE VOLTAGE (V)Figure 10 Typical Junction Capacitance

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DMP3017SFK
10010RDS(ON)Limited

8-ID, DRAIN CURRENT (A)-VGS, GATE-SOURCE VOLTAGE (V)76
VDS = -15V
ID = -9.5A54310DC
PW = 10s
PW = 1s1

PW = 1ms

0.1
TJ(max) = 150°C
TA = 25°C
VGS = -10VSingle Pulse
DUT on 1 * MRP Board

10PW = 100ms
PW = 10ms

20510 15 20 25 30 35 40Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics

1450.010.1

PW = 100µs

110-VDS, DRAIN-SOURCE VOLTAGE (V)Figure 12 SOA, Safe Operation Area100

D = 0.9
D = 0.7
D = 0.5r(t), TRANSIENT THERMAL RESISTANCEADVANCE INFORMATIONNEW PRODUCT9D = 0.30.1

D = 0.1

D = 0.05

D = 0.020.01

D = 0.01

D = 0.005

RJA(t) = r(t) * RJARJA = 59°C/W
Duty Cycle, D = t1/ t2Single Pulse

0.001
0.00001

0.0001

DMP3017SFKDocument number: DS37310 Rev. 4 - 2

0.001

0.01
0.1
1t1, PULSE DURATION TIMES (sec)Figure 13 Transient Thermal Resistance

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DMP3017SFKPackage Outline Dimensions
ADVANCE INFORMATIONNEW PRODUCTPlease see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

AA3A1De
L (3x)Pin #1 ID
R0.150EE1D1L1 (2x)U-DFN2523-6
Dim Min Max Typ
A
0.57 0.63 0.60
A100.05 0.02
A3
 0.152b0.25 0.35 0.30
D2.45 2.55 2.50
D1 1.55 1.65 1.60
e0.65


E
2.25 2.35 2.30
E1 1.18 1.28 1.23
L0.30 0.40 0.35
L10.30 0.40 0.35
All Dimensions in mmb (6x)Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

X1Dimensions Value (in mm)
C0.650X0.400
X11.700
Y0.650
Y10.450
Y21.830
Y32.700

Y1Y2Y3YCDMP3017SFKDocument number: DS37310 Rev. 4 - 2X

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DMP3017SFKADVANCE INFORMATIONNEW PRODUCTIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
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DMP3017SFKDocument number: DS37310 Rev. 4 - 2

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