㉸㧗⃰ᗘࢻ࣮ࣉప᢬ᢠࢲ࢖ࣖࣔࣥࢻⷧ⭷ࡢX⥺྾཰➃ᚤ⣽ᵓ㐀ゎᯒ኱᭤ ᪂▮ᅜ❧◊✲㛤Ⓨἲே ⏘ᴗᢏ⾡⥲ྜ◊✲ᡤ ඛ㐍ࣃ࣮࢚࣡ࣞࢡࢺࣟࢽࢡࢫ◊✲ࢭࣥࢱ࣮
1. ࡣࡌࡵ࡟

ࢻ࡟ࡼࡿḟࠎୡ௦ࣃ࣮࣡ࢹࣂ࢖ࢫ㛤Ⓨࡀᮏ᱁໬ࡋ࡚ ࢲ࢖ࣖࣔࣥࢻࡣඃࢀࡓ≀ᛶ್ࢆ」ᩘ᭷ࡍࡿࡇ࡜࠿

࠾ࡾࠊࡇࢀࡲ࡛࡟ pn ࢲ࢖࣮࢜ࢻࠊࢩࣙࢵࢺ࣮࡛࢟ 1ࡽࠊᵝࠎ࡞ศ㔝⏝㏵࡛⏘ᴗᛂ⏝ࡀᮇᚅࡉࢀࡿᮦᩱ࡛࠶kA/cm2 ࢆ㉸࠼ࡿ࢜ࣥ㟁ὶࡀ 2)ࠊࢺࣛࣥࢪࢫࢱ࡛ࡣ

ࡿࠋ◳ࡉ࣭⪏ᦶ⪖ᛶࡢ≉ᚩࢆ⏕࠿ࡋࠊࢲ࢖ࣖࣔࣥࢻᕤMOSFET ᵓ㐀࡛ 1 A/mm ࢆ㉸࠼ࡿࢹࣂ࢖ࢫ≉ᛶࡀሗලศ㔝࡛ࡣ࠙5000 ൨෇ (ᅜෆ㸸700 ൨෇)ࠚࡢᕷሙࡀ

࿌ࡉࢀ࡚ࡁࡓ 3)ࠋᐇ⏝໬࡟࠾ࡅࡿᙜ㠃ࡢㄢ㢟ࡣࠊ࢙࢘᪤࡟㛤ᣅࡉࢀ࡚࠸ࡿ࡯࠿ࠊ≀㉁୰᭱㧗ࡢ⇕ఏᑟ⋡ࢆ᭷ࣁࡢ኱ཱྀᚄ໬࡜㧗ရ㉁࣭పḞ㝗໬࡛࠶ࡿ࡜⪃࠼ࡽࢀ࡚ࡍࡿࡇ࡜࠿ࡽࠊḟୡ௦ࡢ㧗ᛶ⬟ࣄ࣮ࢺࢩࣥࢡᮦ࡬ࡢᛂ

࠸ࡿࠋ⏝ࡶᮇᚅࡉࢀ࡚࠸ࡿ࠙4000 ൨෇ (ᅜෆ㸸600 ൨෇)ࠚࠋ

ࣃ࣮༙࣡ᑟయ⏝㏵࡛ࡣࠊࠕప᢬ᢠ࢙࢘ࣁࠖࡀᚲせ࡜ࡲࡓࠊ࢟ࣕࣜ࢔⛣ືᗘࠊ⤯⦕◚ቯ㟁⏺࡞࡝࡟௦⾲ࡉࢀ࡞ࡿࠋࡇࢀࡲ࡛ࡢࢹࣂ࢖ࢫヨసホ౯࡛ࡣࠊ༙⤯⦕ᛶࡢࡿ༙ᑟయ≀ᛶ್ࡶ㝿❧ࡗ࡚࠾ࡾࠊཎ⌮ⓗ࡟ࡣ SiCࠊᑠ∦ᇶᯈࢆ⏝࠸࡚࠸ࡿࡓࡵࠊᇶᯈ⿬㠃࡛ࡢᑟ㏻ࡀ࡜ࢀ

GaN ࢆ෽ࡄᛶ⬟ࡀᚓࡽࢀࡿࡇ࡜࠿ࡽࠊ㟁ຊ࣭࿘Ἴᩘࡎࠊ࢜ࣥ᢬ᢠࡀ኱ࡁ࠿ࡗࡓࠋᩘ༑࢔ࣥ࣌࢔⣭ࡢ㟁ὶ㥑ࡢኚ᥮ไᚚ᫬ࡢᦆኻࢆ㝈ࡾ࡞ࡃపῶࡋࡓ㉸పᦆኻࣃື࡟ࡣࠊప᢬ᢠ࢙࢘ࣁୖ࡛ࡢ⦪ᆺࢹࣂ࢖ࢫᙧᡂࡀᚲ㡲࣮༙࣡ᑟయᮦᩱ࡜ࡋ࡚ὀ┠ࡉࢀ࡚࠸ࡿࠋ2016 ᖺ 11 ᭶࡜࡞ࡿࡀࠊ࢙࢘ࣁస〇ἲࡀ☜❧ࡋ࡚࠸࡞࠸ࠋࢲ࢖ࣖࣔࡼࡾⓎຠࡋࡓࠕࣃࣜ༠ᐃ࡛ࠖࡶࠊ ᬮ໬࢞ࢫ๐ῶࡣ᩿ࣥࢻ⤖ᬗᡂ㛗࡟ࡣࠊ(a) 㧗ᅽ㧗⥆ⓗ࠿ࡘႚ⥭ࡢྲྀࡾ⤌ࡳࡀồࡵࡽࢀ࡚࠸ࡿࠋヨ⟬࡛ࡣ࢖ࢡࣟἼࣉࣛࢬ࣐໬ᏛẼ┦ᡂ㛗 (MPCVD) ἲࡀ⏝࠸⌧≧ࡢࣃ࣮༙࣡ᑟయࡀ඲࡚᪂ᆺ࡟⨨ࡁ᥮ࢃࡗࡓሙྜࠊࡽࢀࡿࡀࠊ๓⪅ HPHT ἲ࡛స〇ࡋࡓప᢬ᢠ⤖ᬗ୰࡟ᅜෆࡢᾘ㈝㟁ຊࢆ 1 ๭ (ཎᏊຊⓎ㟁ᡤࡢ 4 ᇶศ௨ୖ࡟ࡣ≉␗࡞Ḟ㝗 (㌿఩ࠊṍࡳࠊ୙⣧≀೫ᯒ) ࢆྵ᭷ࡋࠊ┦ᙜ) ๐ῶྍ⬟࡜ࡉࢀ࡚࠸ࡿࠋ࢚ࢿࣝࢠ࣮᭷ຠά⏝ࡢࡑࢀࡽࡀ࣮࢟ࣛḞ㝗࡜ࡋ࡚ືసࡍࡿࡇ࡜ 4) ࠊᚋ⪅

ほⅬ࠿ࡽ௒ᚋ┈ࠎᢏ⾡㛤Ⓨࡀ㐍ࢇ࡛࠸ࡃศ㔝࡛࠶ࡾࠊ

MPCVD ἲ࡛ࡣ㧗⃰ᗘࢻ࣮ࣆࣥࢢ⎔ቃୗ࡛ከ㔞ࡢ↴ࣃ࣮༙࣡ᑟయ඲య࡛3඙෇ᕷሙ (2020ᖺ) ࡟ᡂ㛗ࡍࡿࡀࢳࣕࣥࣂ࣮ෆ࡟⏕ᡂࡋࠊ㛗᫬㛫ྜᡂࢆ㜼ᐖࡍࡿࡇ࡜࡜ヨ⟬ࡉࢀ࡚࠸ࡿࠋ5)ࠊࡀၥ㢟࡜࡞ࡗ࡚࠸ࡿࠋࡲࡓࡇࢀࡽࡢᡭἲࡣ㠃✚ไ

(HPHT) ἲࠊ(b) ࣐⣙ࡀ࠶ࡾࠊࣉࣛࢬ࣐ࢆᡥᖹ໬ࡋ࡚ࡶ 2 ࢖ࣥࢳȍ⛬ᗘࡀ
2. ࢲ࢖ࣖࣔࣥࢻࣃ࣮࣡ࢹࣂ࢖ࢫࡢ⌧≧࡜ㄢ㢟ࣃ࣮༙࣡ᑟయ୺せᮦᩱࡢ≀ᛶẚ㍑ࢆ⾲ 1 ࡟♧ࡍࠋࢲ㝈⏺࡛࠶ࡿ࡜ࡉࢀ࡚࠸ࡿࠋ୍᪉࡛ᡃࠎࡣࠊ㧗⼥Ⅼ㔠ᒓ࣡࢖࣮ࣖࢆ㏻㟁ຍ⇕ࡋࠊཎᩱ࢞ࢫࢆ┤᥋άᛶ໬ࡍࡿࠊ࢖ࣖࣔࣥࢻࡣ⤯⦕◚ቯ㟁⏺ࡀ 10 MV/cm ࡜㧗ࡃࠊྠ⪏ᅽタィ࡛ࡣࢻࣜࣇࢺᒙཌࢆⷧࡃ࡛ࡁࡿࡇ࡜࠿ࡽࠊཎ⌮⾲ ࣃ࣮༙࣡ᑟయ୺せᮦᩱࡢ≀ᛶẚ㍑
ᑠἨ䚸᮳㔝䠖NEW DIAMOND No.120 (2016)ⓗ࡟ᑟ㏻᫬ࡢᦆኻࢆῶࡽࡍࡇ࡜ࡀฟ᮶ࡿࠋࡲࡓᐊ ࡛SiSiCGaN䝎䜲䝲䝰䞁䝗ࡢ㟁Ꮚ࣭ṇᏍࡢ࢟ࣕࣜ࢔⛣ືᗘࡣࠊ7300ࠊ5300⤯⦕◚ቯ㟁⏺
[MV/cm]

0.3

42

10

cm2/(Vs) (ࢧ࢖ࢡࣟࢺࣟࣥඹ㬆࡛ࡢሗ࿌್) ࡜᱁ẁ࡟⇕ఏᑟ⋡[W/(cm䞉K)]

1.5

5

1.522㧗ࡃ 1)ࠊ㧗㏿࣭㧗㟁ὶᐦᗘࡢࢫ࢖ࢵࢳࣥࢢࡀᐇ⌧ྍ⬟㟁ຊᛶ⬟ᣦᩘ
[V2/(cm䞉s)]

1670

14024000

⤖ᬗᛶ䖂

ከᙧ

䕿

䕿

࡛࠶ࡿࠋࡑࡢ௚ࡢ࣓ࣜࢵࢺ࡜ࡋ࡚ࡣࠊ⇕ఏᑟ⋡ࡀ㖡ࡢ

㈨※ไ⣙䖂

䖂

㽢

䖂

5 ಸ࡜࠸࠺≀㉁୰᭱㧗ࡢ್ࢆ᭷ࡋ࡚࠸ࡿࡇ࡜࡛࠶ࡾࠊ

䝗䞊䝢䞁
䜾‽఩
[meV]

ࡇࢀ࡟ࡼࡾࢹࣂ࢖ࢫ࿘ᅖࡢ෭༷ࢩࢫࢸ࣒ࡢᑠᆺ࣭⡆␎໬ࠊ㧗 Ᏻᐃືసࡀྍ⬟࡜࡞ࡿࠋᅜෆእ࡛ࢲ࢖ࣖࣔࣥ
n-45 (P)70 (N)

25 (Si)570 (P)

p-45 (B)200 (Al)150 (Mg)

360 (B)ᡤㅝࠊ⇕ࣇ࢕࣓ࣛࣥࢺ(HF) CVD ἲࢆ⏝࠸ࡓཌ⭷ྜᡂ

4. NEXAFS ࡟ࡼࡿప᢬ᢠࢲ࢖ࣖࣔࣥࢻࡢᵓ㐀ホ౯࡟ྲྀࡾ⤌ࢇ࡛࠸ࡿࠋᮏᡭἲࡣ㠃✚ไ⣙ࡀ࡞ࡃ 12 ࢖ࣥᅗ 1 ࡟㧗⃰ᗘ࣍࢘⣲ࢻ࣮ࣉࢲ࢖ࣖࣔࣥࢻࡢࢳ௨ୖࡢ኱㠃✚໬ࡀྍ⬟࡛࠶ࡾࠊከ⤖ᬗࢲ࢖ࣖࣔࣥࢻ

NEXAFS C-K ➃ࢫ࣌ࢡࢺࣝࢆ♧ࡍࠋᛴᓧ࡞ࢲ࢖ࣖࣔᯈࠊᕤලࢥ࣮ࢸ࢕ࣥࢢ࡞࡝࡛ᐇ⏝໬ࡉࢀ࡚࠸ࡿࡀࠊ༢ࣥࢻ Core-exciton ࣆ࣮ࢡࡀ 289 eV ௜㏆࡟ぢࡽࢀ࡚࠾⤖ᬗࠊ㧗ရ㉁⏝㏵࡛ࡣ㐺⏝౛ࡣᑡ࡞࠿ࡗࡓࠋࡋ࠿ࡋ୙ࡾࠊࣃ࣮ࢭࣥࢺ࣮࢜ࢲ࣮ࡢ㧗⃰ᗘࢻ࣮ࣆࣥࢢ࡟㛵ࢃࡽ⣧≀ΰධࠊ⤖ᬗရ㉁࡞࡝ㄢ㢟ࡀゎỴࡉࢀࢀࡤࠊప᢬ᢠࡎࠊⰋዲ࡞⤖ᬗᛶࡀ⥔ᣢࡉࢀ࡚࠸ࡿࡇ࡜ࡀ☜ㄆࡉࢀࡓࠋ࢙࢘ࣁ〇㐀ᡭἲ࡜ࡋ࡚᭷ᮃ࡛࠶ࡿ࡜⪃࠼࡚࠸ࡿࠋᮏᡭ

284.5 eV ㏆ഐࡢࣈ࣮ࣟࢻ࡞ࣆ࣮ࢡࡣࠊB ࢔ࢡࢭࣉࢱ࣮ἲࢆ⏝࠸ࡓሙྜ (1) ↴ࡢⓎ⏕ࡀᢚไࡉࢀࠊ㧗ຠ⋡ࢻ࣮‽఩࡟⏤᮶ࡋ࡚࠾ࡾࠊp ᆺࡢ࣮࣍ࣝ࢟ࣕࣜ࢔⏕ᡂࡢ㉳ࣆࣥࢢࡀྍ⬟࡞ࡇ࡜ࠊ(2) 5E19 ~ 1E21 cm3 ࡢ㉸㧗⃰※࡜࡞ࡿࠋࢲ࢖ࣖࣔࣥࢻࡢሙྜࠊ⨨᥮ཎᏊ఩⨨࡟ࢻ࣮ᗘࢻ࣮ࣉࡀྍ⬟࡛ࠊᐊ ᢬ᢠ⋡ ~1 m:cm ࡀᐇ⌧࡛ࡁࣉࡉࢀࡿࡇ࡜࡛ࠊࡇࡢ‽఩ࡀᙧᡂࡉࢀࡿࠋࢻ࣮ࣉ㔞ୖࡿࡇ࡜ࠊࢆᐇドࡋ࡚࠸ࡿ 6)ࠋ㟁Ẽ≉ᛶ࡜ྛ✀ศගᏛⓗ᪼࡟కࡗ࡚ (No.1ЍNo.2)ࠊࣆ࣮ࢡࡢࢩࣙࣝࢲ࣮࡟᪂

ゎᯒࡢ⤖ᯝ࠿ࡽࠊࢻ࣮ࣃࣥࢺ (࣍࢘⣲) ཎᏊࡣ⨨᥮ࢧࡓ࡞ࣆ࣮ࢡࡀ 282.5 eV ㏆ഐ࡟ฟ⌧ࡋ࡚࠸ࡿࠋࡇࢀࡣ࢖ࢺ࡟఩⨨ࡋࠊ㟁Ẽⓗ࡟άᛶ࡛࠶ࡿࡇ࡜ࢆண ࡋ࡚࠸ࢻ࣮ࣉ㔞ୖ᪼࡟క࠺ࣇ࢙࣑ࣝ‽఩ࡢࢩࣇࢺࡀ㛵㐃ࡋࡿࡀࠊ☜ࡓࡿドᣐࡣᚓࡽࢀ࡚࠸࡞࠸ࠋᮏ◊✲ㄢ㢟࡟ࡼ࡚࠾ࡾࠊ㧗⃰ᗘࢻ࣮ࣉ࡟ࡼࡿ⦰㏥༙ᑟయ໬ࢆ♧၀ࡋ࡚ࡾࠊ⤖ᬗෆ㒊ࡢࢻ࣮ࣃࣥࢺࡢ໬Ꮫ⤖ྜ≧ែࢆㄪ࡭ࡓࠋ࠸ࡿࠋᐇ㝿࡟ HFCVD No.2 ࡢ㟁Ẽఏᑟᗘࡢ ᗘ౫Ꮡᛶࢆ ᐃࡍࡿ࡜ࠊ㧗 ࠿ࡽప ᇦࡢᖜᗈ࠸ ᗘ㡿ᇦ࡟

3. ᐇ㦂᪉ἲ

࠾࠸࡚᢬ᢠ್ࡢኚືࡀ࡯࡜ࢇ࡝ぢࡽࢀࡎࠊ㔠ᒓⓗ࡞ఏ

HFCVD ἲ࡟ࡼࡾࠊ㧗⃰ᗘ࣍࢘⣲ࢻ࣮ࣉ༢⤖ᬗࢲ࢖ᑟࢆ♧ࡍࡇ࡜ࢆ☜ㄆࡋ࡚࠸ࡿࠋẚ㍑ヨᩱ࡜ࡋ࡚ ᐃࡋࣖࣔࣥࢻⷧ⭷ࢆྜᡂࡋࡓࠋ࣍࢘⣲ࢻ࣮ࣉ࡟ࡣࢺ࣓ࣜࢳ

ࡓHPHT〇ࢲ࢖ࣖࣔࣥࢻࡢC K-edgeࢫ࣌ࢡࢺ࡛ࣝࡣࠊࣝ ࣎ ࣟ ࣥ (TMB) ࢆ ⏝ ࠸ ࠊ ࣍ ࢘⣲/ ࢝ ࣮ ࣎ ࣥ ẚB ‽఩࡜Core-exciton ࣆ࣮ࢡ㛫࡟࠸ࡃࡘ࠿ࡢḞ㝗 (୰([B]/[C]) ᥮⟬࡛ 200 㹼 12000 ppm ࡢ࢞ࢫ㞺ᅖẼ࡛㛫) ‽఩ࡀࡳࡽࢀࡓࠋࡲࡓࡇࢀࡽࡢࣆ࣮ࢡࡣࠊ࣐࢖ࢡྜᡂࡋࡓࠋ඾ᆺⓗ࡞ྜᡂ᮲௳ࡣࠊ࣓ࢱࣥ/Ỉ⣲࢞ࢫὶ㔞ࣟἼࣉࣛࢬ࣐ CVD ἲ࡛ྜᡂࡋࡓ㧗⃰ᗘ࣍࢘⣲ࢻ࣮ࣉẚ 3%ࠊ ࣇ࢕࣓ࣛࣥࢺ ᗘ 2100qCࠊࣇ࢕࣓ࣛࣥࢺ

ࢧࣥࣉ࡛ࣝࡶほ ࡉࢀ࡚࠸ࡿ 7)ࠋMuramatsu ࡽࡢ⌮ᇶᯈ㛫㊥㞳15 mm࡛࠶ࡾࠊᡂ㛗᫬㛫ࡣ5᫬㛫࡜ࡋࡓࠋㄽィ⟬࡟ࡼࡿ࡜ࠊ᱁ᏊḞ㝗఩⨨࡟ΰධࡋࡓ B ࢡࣛࢫ⾲ 2 ࡟ศᯒヨᩱ୍ぴࢆ♧ࡍࠋẚ㍑ヨᩱ࡜ࡋ࡚ࠊ㧗 㧗ᅽἲ࡛ྜᡂࡉࢀࡓ࣍࢘⣲ࢻ࣮ࣉࣂࣝࢡ⤖ᬗࢆ⏝࠸ࡓࠋᐃࢆ SAGA-LS BL12 ࡟࡚࠾ࡇ࡞ࡗࡓࠋ ᐃࡣࠊ඲㟁Ꮚ཰㔞ἲ (Total ElectronYield: TEY)ࠊ⺯ග཰㔞 (Flourecense Yield: FY) ἲࡢࢫ࣌ࢡࢺࣝࢆྠ᫬ྲྀᚓࡋࡓࠋࢫ࢟ࣕࣥ⠊ᅖࡣ C1s ;275~345 eVࠊB1s ; 185~220 eV ࡜ࡋࡓࠋ

% 6XEVWLWXWLRQDO

B–clusters

HPHT⾲ 2. NEXAFS ホ౯⏝ࡢヨᩱ୍ぴHFCVD No.2

ྜᡂ
ᡭἲ

࣍࢘⣲
ࢻ࣮ࣉ㔞SIMS࣍࢘⣲⃰ᗘ(cm3)

᢬ᢠ⋡
(:cm)

No. 1

HFCVD

0.06 %(600 ppm)

4.7u1019

9.4u102

No. 2

HFCVD

0.60 %(6000 ppm)

1.2u1021

1.6u103

0.03 %(300 ppm)

9u1019(࢟ࣕࣜ࢔⃰ᗘ)ཧ⪃ヨᩱCore–exciton

Intensity (arb.unit)

C1sࠊB1s ࡢ NEXAFSHPHT

HFCVD No.1275

280285290295

Photon energy (eV)ᅗ 1. 㧗⃰ᗘ࣍࢘⣲ࢻ࣮ࣉࢲ࢖ࣖࣔࣥࢻ (100) ࡢ
NEXAFS C-K ➃ࢫ࣌ࢡࢺࣝࠋSAGA-LS BL12 ࡟࡚8u102

HFCVD ྜᡂࡢ஧ヨᩱ࠾ࡼࡧHPHT〇ࡢẚ㍑ヨᩱࢆホ౯ࡋࡓࠋヨᩱヲ⣽ࡣ⾲ 2 ࡟グ㍕ࡋࡓࠋࢱ࣮ࡢ≧ែᐦᗘࢫ࣌ࢡࢺࣝ࡜㢮ఝࡋ࡚࠾ࡾࠊ⨨᥮ཎᏊ๭ྜ࡛Ꮡᅾࡋ࡚࠸ࡿࡇ࡜ࡀศ࠿ࡗࡓࠋࡇࡢࡇ࡜ࡀప᢬

ࢧ࢖ࢺ௨እ࡛ࡢ B ྲྀࡾ㎸ࡳࡀ⏕ࡌ࡚࠸ࡿࡇ࡜ࢆ♧၀ᢠ໬࡟ᐤ୚ࡋ࡚࠸ࡿ࡜⪃࠼ࡽࢀࡿࠋ

ࡋ࡚࠸ࡿࠋ୍᪉࡛ࠊHFCVD ྜᡂヨᩱ࡛ࡣࠊ1 ᱆௨ୖ㧗࠸ B ࢻ࣮ࣉ࡟㛵ࢃࡽࡎࢡࣛࢫࢱ࣮࡟㉳ᅉࡍࡿࣆ࣮ㅰ㎡ࢡࡣほ ࡉࢀ࡞࠿ࡗࡓࠋᅗ 1 inset ࡟♧ࡍ᱁Ꮚࣔࢹࣝᮏᐇ㦂ࡣࠊ஑ᕞࢩࣥࢡࣟࢺࣟࣥග◊✲ࢭࣥࢱ࣮┴᭷ࡢᵝ࡟ࠊ⨨᥮ཎᏊ఩⨨࡟ B ࡀ㧗࠸๭ྜ࡛ྲྀࡾ㎸ࡲࢀ࡚ࣅ࣮࣒ࣛ࢖ࣥ฼⏝ㄢ㢟ࡢ᥇ᢥࢆཷࡅBL12࡟࡚ᐇ᪋ࡉ࠸ࡿࡇ࡜ࢆ♧၀ࡋ࡚࠸ࡿࠋᅗ 2 ࡟㐣ཤࡢሗ࿌್ࢆඖ࡟

ࢀࡓࠋ(ㄢ㢟␒ྕ㸸1507055Sࠊ1512129S) ᐇ㦂ࡢࡈᣦࣉࣟࢵࢺࡉࢀࡓ᢬ᢠ⋡࡜࣍࢘⣲⃰ᗘࡢ㛵ಀࢆ♧ࡍ 8)ࠋ

ᑟࢆ㡬࠸ࡓᑠᯘⱥ୍༤ኈࠊ㛵ಀྛ఩ࡢⓙᵝ᪉࡟῝ࡃᚚ௒ᅇྜᡂࡋࡓ HFCVD ヨᩱࡢ⤖ᯝࢆኴ୸࡛♧ࡋࡓࠋྠ♩⏦ࡋୖࡆࡲࡍࠋ୍ࢻ࣮ࣉ㔞࡛ẚ㍑ࡍࡿ࡜୍᱆࠿ࡽ஧᱆ࡢప᢬ᢠ໬ࡋཧ⪃ᩥ⊩ࡓࡇ࡜࡟ࡼࡿຠᯝ࡜⪃࠼ࡽࢀࡿࠋ௒ᚋࠊࢡࣛࢫࢱ࣮ΰ

[1] I. Akimoto, et al., "High carrier mobility inධࡢ㉳※ࡶྵࡵ࡚᭦࡞ࡿ㧗ရ㉁ప᢬ᢠ໬ࡢ▱ぢࢆ῝ultrapureࡵ࡚࠸ࡃணᐃ࡛࠶ࡿࠋ

cyclotron resonance", Appl. Phys. Lett., 105, 032102

Resistivity(:cm)᢬ᢠ⋡ (:cm)

࡚࠾ࡾࠊ㟁Ẽⓗ࡟୙άᛶ࡞ B ࢡࣛࢫࢱ࣮ࡢྵ᭷ࡀῶࡗ

diamondmeasured

bytime-resolved(2014).

106105104

high forward current density and fast switching

103operation", Appl. Phys. Lett. 94, 262101 (2009) .

102[3] K. Hirama, et al., "Diamond Field-Effect101100

17–1

10–2

10–3

[2] T. Makino, et al., "Diamond Schottky-pn diode with

Nd = 10 cm
16–3
Nd = 10 cm

Nd = 1010–315cm

Transistors with 1.3 A/mm Drain Current Density by–3Al2O3 Passivation Layer", Jpn. J. Appl. Phys. 51,90112 (2012).
[4] K. Srimongkon, S. Ohmagari, et al., "Boron‫ ڸ‬Single–crystal
Fit (SCD)‫ ۑ‬Polycrystalline

inhomogeneity–410 1516171819202122
10 10 10 10 10 10 10 10–3-3䝩䜴⣲⃰ᗘ(cmNa – Nd (cm))

ofHPHT-grownsingle-crystal

diamond substrates: Confocal micro-Raman mapping

investigations", Diam. Relat. Mater. 63, 21 (2015).

ᅗ 2. ࢲ࢖ࣖࣔࣥࢻ୰࣍࢘⣲⃰ᗘ࡜᢬ᢠ⋡ࡢ㛵ಀᅗࠋኴ୸

[5] R. Issaoui, et al., "Growth of thick heavily

ࡣ௒ᅇస〇ࡋࡓ HFCVD ⭷ࡢ⤖ᯝࠋ‫ࡣڸ‬༢⤖ᬗࠊ‫ࡣۑ‬ከboron-doped diamond single crystals: Effect of⤖ᬗࢲ࢖ࣖࣔࣥࢻ࡛ࡢሗ࿌್ 8)ࠋ

microwave power density", Appl. Phys. Lett. 97, 17(2010).

5. ࡲ࡜ࡵ㧗⃰ᗘ࣍࢘⣲ࢻ࣮ࣉࢲ࢖ࣖࣔࣥࢻࡢప᢬ᢠ໬ࡢ㉳[6] S. Ohmagari, et al., "Low resistivity p+ diamond(100) films fabricated by hot-filament chemical vapor※ࢆㄪ࡭ࡿࡓࡵ࡟ࠊSAGA-LS BL12 ࡟࡚྾཰➃㏆ഐ

deposition", Diam. Relat. Mater. 58, 110 (2015).

X ⥺ᚤ⣽ᵓ㐀ゎᯒࢆᐇ᪋ࡋࡓࠋ࣐࢖ࢡࣟἼࣉࣛࢬ࣐

[7] J. Iihara, et al., "Element-Selective Observation ofCVD ἲࠊHPHT ἲ࡛ྜᡂࡉࢀࡓヨᩱ࡛ࡣࠊB ࢻ࣮ࣉElectronicࢲ࢖ࣖࣔࣥࢻ≉᭷ࡢ࢔ࢡࢭࣉࢱ‽఩࡟⏤᮶ࡍࡿࣆ࣮Semiconducting and Metallic States in Boron-Dopedࢡ࡟ຍ࠼ࠊB ࢡࣛࢫࢱ࣮⏤᮶ࡢࣆ࣮ࢡࡀほ ࡉࢀࡓࠋDiamond Using Soft X-ray Emission and Absorptionࣇ࢕࣓ࣛࣥࢺ CVD ἲ࡛స〇ࡋࡓヨᩱ࡛ࡣࠊ1021 cm3Spectroscopy", Jpn. J. Appl. Phys. 44, 6612 (2005).

ࢆ㉸࠼ࡿ㧗࠸⃰ᗘࡢࢻ࣮ࣉ㔞࡟㛵ࢃࡽࡎࠊB ࢡࣛࢫ[8] M. Werner, et al., "The diamond Irvin curve", Diam.

ࢱ࣮⏤᮶ࡢࣆ࣮ࢡࡣほ ࡉࢀࡎࠊ⨨᥮ཎᏊ఩⨨࡟㧗࠸

Relat. Mater. 6, 308 (1997).

StructureTransition

between