࣍ੈ୅ X ઢఱจ༻ SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ͷೈ X ઢੑೳ‫ͼٴ‬ϊΠζੑೳͷఆྔత‫ڀݚ‬‫౎ژ‬େֶେֶӃ ཧֶ‫ڀݚ‬Պ ෺ཧֶɾӉ஦෺ཧֶઐ߈
෺ཧֶୈೋ‫ ࣨڭ‬Ӊ஦ઢ‫ࣨڀݚ‬ࣇ‫ ۄ‬ྋଠ
2021 ೥ 1 ݄ 27 ೔Abstract΄ͱΜͲͷۜՏͷத৺ʹ௒‫ڊ‬େϒϥοΫϗʔϧ͕ଘࡏ͢Δ͕ɺͦΕ͕ͲͷΑ͏ʹ‫ܗ‬੒͞ΕɺਐԽ͖ͯͨ͠ͷ͔͸ະͩղ໌͞Ε͍ͯͳ͍ɻ͜ΕΛղ͖໌͔͢‫ݤ‬͸ɺਖ΍Ψεʹຒ΋Εͨ‫׆‬ಈۜՏ֩ͷߴ‫౓ײ‬ɾ޿ଳҬ (1–80 keV) ‫؍‬ଌͰ͋Δɻզʑ͸ͦͷ࣮‫ݱ‬Λ໨ࢦ͠ɺ࣍
ੈ୅ X ઢఱจӴ੕ʮFORCEʯ‫ܭ‬ըΛਪਐ͍ͯ͠ΔɻFORCE ‫ܭ‬ըͰ͸ɺա‫ߴ࠷ڈ‬ͷ‫ݕ‬ग़‫ײ‬౓Λ࣮‫͢ݱ‬ΔͨΊʹɺߴΤωϧΪʔཻࢠ༝དྷͷඇ X ઢόοΫάϥ΢ϯυ (NXB) Λ൓ಉ࣌‫਺ܭ‬๏ʹΑΓআ‫͢ڈ‬ΔɻͦͷͨΊɺ‫ݕ‬ग़‫ʹث‬͸ ∼ 10 µs ΑΓ΋ߴ͍࣌ؒ෼ղೳ͕ཁ‫͞ٻ‬Ε
Δɻ͔͠͠ɺ‫ࡏݱ‬ओྗͷ X ઢ CCD Ͱ͸࣌ؒ෼ղೳ͕਺ඵఔ౓ʹ͗͢ͳ͍ɻͦ͜Ͱɺզʑ
͸ SOI ٕज़Λ༻͍ͨ࣍ੈ୅ͷ X ઢϐΫηϧ‫ݕ‬ग़‫ث‬ʮXRPIXʯΛ։ൃ͍ͯ͠Δɻͦͷ࠷େͷಛ௃͸֤ϐΫηϧʹ࣮૷ͨ͠τϦΨճ࿏Ͱ͋Δɻ͜ΕʹΑΓɺτϦΨग़ྗͨ͠λΠϛϯάͰώοτϐΫηϧΛಡΈग़͢ʮΠϕϯτ‫ۦ‬ಈಡΈग़͠ʯ͕ՄೳͰɺ< 10 µs ͷ࣌ؒ෼ղೳΛୡ੒͢ΔɻैདྷͷૉࢠͰ͸ɺτϦΨΛ༻͍ͳ͍ʮϑϨʔϜಡΈग़͠ʯͱൺֱͯ͠ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠ͷ෼ޫੑೳ͕ஶ͘͠ྼԽ͢Δ໰୊͕͋ͬͨɻઌߦ‫͔ڀݚ‬Βɺ͜ͷ‫ݪ‬Ҽ͸τϦΨճ࿏ͱηϯα෦ͷ༰ྔ݁߹ʹ͋Δͱಥ͖ࢭΊͨɻͦ͜Ͱɺզʑ͸৽ͨʹ PDD (Pinned Depleted
Diode) ߏ଄Λಋೖͨ͠ XRPIX6E Λ։ൃͨ͠ɻPDD ߏ଄͸੩ిγʔϧυͱͯ͠࡞༻͢Δ‫ݻ‬ఆిҐ૚Λ࣋ͭɻ͜ΕʹΑΓɺ໰୊ͷ༰ྔ݁߹Λஅͪ੾Γɺ187 eV (FWHM at 6.4 keV)ͱ͍͏ա‫ߴ࠷ڈ‬ͷΤωϧΪʔ෼ղೳΛୡ੒ͨ͠ɻ
զʑ͸͜ͷ XRPIX6E Λ༻͍ͯΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱೈ X ઢੑೳධՁΛߦ͍ɺAl-K(1.5 keV) ͷॳ‫ݕ‬ग़ʹ੒ޭͨ͠ɻ͔͠͠ɺͦͷ‫ݕ‬ग़ޮ཰͸ϑϨʔϜಡΈग़͠ΑΓ΋௿͘ɺ
1.1 keV ະຬͷ X ઢ͸ϊΠζʹຒ΋Εͯ‫ݕ‬ग़Ͱ͖ͳ͍͜ͱΛൃ‫ͨ͠ݟ‬ɻͦ͜Ͱɺզʑ͸τϦΨੑೳʹ‫د‬༩͢ΔϊΠζͷఆྔతධՁΛߦͳͬͨɻͦͷ݁ՌɺτϦΨճ࿏ͷϊΠζʹՃ͑ɺϐΫηϧ಺෦ͷిՙ༗‫ײ‬Ξϯϓ (CSA) ϊΠζ΍҉ిྲྀϊΠζͱ͍ͬͨ‫ج‬ຊతͳϊΠζ௿‫࠷͕ݮ‬ॏཁ՝୊Ͱ͋Δ͜ͱ͕Θ͔ͬͨɻҰํɺࠜຊతͳ໰୊ͱͯ͠ɺXRPIX6E ͸௿͍‫ٯ‬όΠΞεిѹͰ͸ಈ࡞͠ͳ͍͜ͱ͕൑
໌͍ͯͨ͠ɻͦΕΛղܾ͢Δૉࢠͱͯ͠ɺզʑ͸ PDD ߏ଄Λվྑͨ͠৽ૉࢠ XRPIX8 Λ։ൃͨ͠ɻ௿͍όοΫόΠΞεిѹͰ΋ಈ࡞͢Δ͜ͱʹ੒ޭ͠ɺ໰୊Λղܾͨ͜͠ͱΛࣔͨ͠ɻ͜ΕΛ༻͍ɺ͋ΒͨΊͯ CSA ճ࿏ϊΠζͱ҉ిྲྀϊΠζͷଌఆ৚݅Λมߋ͠ఆྔ
తධՁΛߦͳͬͨɻͦͷ݁ՌɺόοΫόΠΞεిѹʹґଘͯ͠ CSA ճ࿏ϊΠζ͕ஶ͘͠૿Ճ͠ɺ෼ޫੑೳ͕ྼԽ͢Δ͜ͱΛൃ‫ͨ͠ݟ‬ɻ͜ͷཧ༝͸ɺόοΫόΠΞεిѹΛ௿͘͢
Δͱηϯα෦ͷ༰ྔ͕େ͖͘ͳΔͨΊͰ͋Δ͜ͱΛ໌Β͔ʹͨ͠ɻ

i

໨࣍
ୈ1ষ
1.1

1.2

ୈ2ষ
2.1

2.2

2.3
2.4

2.5

ୈ3ষ
3.1

3.2

࣍ੈ୅ X ઢࡱ૾෼ޫ‫ث‬ͷ։ൃಈ‫ػ‬ۜՏத৺‫ڊ‬େϒϥοΫϗʔϧͱ฼ۜՏͷ‫ڞ‬ਐԽͷղ໌ . . . . . . . . . . . .
1.1.1 ‫׆‬ಈۜՏ֩ (AGN) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.1.2 ʮຒ΋Εͨʯ‫׆‬ಈۜՏ֩ͷ୳ࠪ . . . . . . . . . . . . . . . . . . . .
࣍ੈ୅ͷ޿ଳҬ X ઢࡱ૾෼ޫӴ੕ FORCE ʹ౥ࡌ༧ఆͷ Si ൒ಋମ‫ݕ‬ग़‫ ث‬.
1.2.1 ϋΠϒϦου‫ ܕ‬X ઢ‫ݕ‬ग़‫ ث‬WHXI . . . . . . . . . . . . . . . . . . .
1.2.2 FORCE Ӵ੕౥ࡌͷೈ X ઢ‫ݕ‬ग़‫ʹث‬ର͢Δཁ‫ٻ‬ੑೳ . . . . . . . . .

1
1
1
2
4
5
7

X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬ޫͱ෺࣭ͷ૬‫ ༻࡞ޓ‬. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.1.1 ޫి‫ٵ‬ऩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.1.2 ޫి‫ٵ‬ऩҐஔ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.1.3 ిࢠӢͷੜ੒ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
൒ಋମ෺ཧͷ‫ ૅج‬. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.1 ൒ಋମͷ‫ ૅج‬. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.2 ΩϟϦΞີ౓ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.3 pn ઀߹ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CMOS Ξφϩάճ࿏ͷ‫ ૅج‬. . . . . . . . . . . . . . . . . . . . . . . . . . .
2.4.1 ιʔε઀஍૿෯ճ࿏ . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.4.2 υϨΠϯ઀஍૿෯ճ࿏ (ιʔεϑΥϩΞճ࿏) . . . . . . . . . . . . .
X ઢ CMOS Πϝʔδηϯαͷ‫ج‬ຊతͳੑೳࢦඪ . . . . . . . . . . . . . . .
2.5.1 ม‫׵‬ήΠϯ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5.2 ΤωϧΪʔ෼ղೳ . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5.3 ಡΈग़͠ϊΠζ . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5.4 ҉ిྲྀϊΠζ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5.5 ‫ݕ‬ग़ޮ཰ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8
8
9
9
9
10
10
11
12
14
16
17
18
19
20
20
20
23
26

SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃ
SOI ‫ݕ‬ग़‫ ث‬. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1.1 SOI σόΠεͷߏ଄ . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1.2 SOI ‫ݕ‬ग़‫ث‬ͷಛ௃ . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1.3 SOI ‫ݕ‬ग़‫ث‬ͷ՝୊: όοΫήʔτޮՌ . . . . . . . . . . . . . . . . .
SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ʮXRPIXʯ . . . . . . . . . . . . . . . . . . . . . . . .

27
27
27
28
29
30

ii
3.2.1 XRPIX ͷϐΫηϧճ࿏ . . . . . . . . . . . . . . . . . . . . . . . . .
3.2.2 XRPIX ͷಡΈग़͠Ϟʔυ . . . . . . . . . . . . . . . . . . . . . . . .
3.2.3 σʔλऔಘγεςϜ . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2.4 ϖσελϧิਖ਼ͱϊΠζআ‫ ڈ‬. . . . . . . . . . . . . . . . . . . . .
3.2.5 Πϕϯτࣝผ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ैདྷͷߏ଄Λ࣋ͭ XRPIX ͷೈ X ઢੑೳͱ՝୊ . . . . . . . . . . . . . . . .

30
37
39
40
42
43

ୈ4ষ
4.1
4.2

PDD ߏ଄Λಋೖͨ͠ϓϩτλΠϓ XRPIX6E
Pinned Depleted Diode (PDD) ߏ଄ . . . . . . . . . . . . . . . . . . . . . . .
PDD ߏ଄Λಋೖͨ͠ XRPIX6E ͷ։ൃ . . . . . . . . . . . . . . . . . . . . .
4.2.1 XRPIX6E ͷ֓ཁ . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2.2 XRPIX6E ͰಘΒΕͨੑೳ . . . . . . . . . . . . . . . . . . . . . . .

48
48
51
51
51

ୈ5ষ
5.1

XRPIX6E ͷೈ X ઢੑೳධՁ
࣮‫ݧ‬ηοτΞοϓ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.1.1 ଟ৭‫ ޫܬ‬X ઢֱਖ਼γεςϜΛ༻͍ͨηοτΞοϓ . . . . . . . . . .
5.1.2 ߃Թ૧Λ༻͍ͨηοτΞοϓ . . . . . . . . . . . . . . . . . . . . .
5.1.3 SDD Λ༻͍ͨ༧උ࣮‫ ݧ‬. . . . . . . . . . . . . . . . . . . . . . . . .
ϑϨʔϜಡΈग़͠Ͱͷೈ X ઢੑೳධՁ . . . . . . . . . . . . . . . . . . . .
5.2.1 ೈ X ઢεϖΫτϧੑೳධՁ . . . . . . . . . . . . . . . . . . . . . . .
5.2.2 ‫ݕ‬ग़ޮ཰ͱཪ໘ෆ‫ײ‬૚ްͷଌఆ . . . . . . . . . . . . . . . . . . . .
Πϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δೈ X ઢτϦΨੑೳධՁ . . . . . . . . . . .
5.3.1 ೈ X ઢͷΧ΢ϯτϚοϓʹ͓͚ΔඇҰ༷ੑ . . . . . . . . . . . . . .
5.3.2 ੍‫ྖͨ͠ݶ‬Ҭ಺ͰͷτϦΨੑೳධՁ . . . . . . . . . . . . . . . . . .
5.3.3 τϦΨճ࿏ͷϊΠζੑೳ . . . . . . . . . . . . . . . . . . . . . . . .
5.3.4 ೈ X ઢੑೳධՁͷ·ͱΊ . . . . . . . . . . . . . . . . . . . . . . . .

57
57
57
59
59
62
62
62
64
64
66
70
72

PDD ߏ଄Λվྑͨ͠৽ૉࢠ XRPIX8XRPIX8 ૉࢠͷ֓ཁ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
‫ج‬ຊੑೳࢼ‫ ݧ‬. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.2.1 ిྲྀిѹಛੑͷଌఆ . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.2.2 ۭ๡૚ްͷଌఆ . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
‫ج‬ຊੑೳධՁ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.3.1 ϐΫηϧຖͷήΠϯͷҰ༷ੑͱิਖ਼ . . . . . . . . . . . . . . . . . .

74
74
77
77
78
81
83

XRPIX8 Λ༻͍ͨϊΠζ‫ݯ‬ͷఆྔతௐࠪ
҉ిྲྀͷఆྔతධՁ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7.1.1 ϖσελϧͷ࿐ޫ࣌ؒඇઢ‫ܗ‬ੑ . . . . . . . . . . . . . . . . . . . .
7.1.2 ҉ిྲྀͷධՁͱٞ࿦ . . . . . . . . . . . . . . . . . . . . . . . . . . .
CSA ճ࿏ϊΠζͷཧ࿦తߟ࡯ . . . . . . . . . . . . . . . . . . . . . . . . .
7.2.1 CSA ճ࿏ϊΠζͷཧ࿦ . . . . . . . . . . . . . . . . . . . . . . . . .
7.2.2 CSA ճ࿏ϊΠζͷཧ࿦‫ࢉܭ‬஋ . . . . . . . . . . . . . . . . . . . . .

86
86
86
90
91
91
95

3.3

5.2

5.3

ୈ6ষ
6.1
6.2

6.3

ୈ7ষ
7.1

7.2

iii
7.3

7.4
ୈ8ষ

ϊΠζ‫ݯ‬ͷ੾Γ෼͚ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
7.3.1 ϐΫηϧຖͷϖσελϧ෯ͷଌఆ . . . . . . . . . . . . . . . . . . . 98
7.3.2 ҉ిྲྀϊΠζͷ‫د‬༩ . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
7.3.3 ಡΈग़͠ϊΠζͷ‫د‬༩ . . . . . . . . . . . . . . . . . . . . . . . . . 99
ϊΠζ௿‫ޙࠓ͚ͨ޲ʹݮ‬ͷํ਑ . . . . . . . . . . . . . . . . . . . . . . . . 101·ͱΊ෇ ࿥ A ෇࿥A.1 पลճ࿏ͷಈ࡞ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A.2 XRPIX6E ʹ͓͚Δ҉ిྲྀ໰୊ . . . . . . . . . . . . . . . . . . . . . . . . .
A.2.1 ҉ిྲྀ໰୊ͷ֓ཁ . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A.2.2 ҉ిྲྀ໰୊ͷ‫ݪ‬Ҽ . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A.3 CSA ճ࿏ͷϊΠζͷಋग़ . . . . . . . . . . . . . . . . . . . . . . . . . . . .

104
106
106
108
108
108
111

iv

ਤ໨࣍

1.1
1.2
1.3
1.4
1.5
1.6

ۜՏͷ໛ࣜਤͱۜՏόϧδͷ࣭ྔͱ SMBH ͷ࣭ྔ M ͷؔ܎ਤ . . . . . . .
2-10 keV ଳҬͰͷ AGN ͷۭؒ਺ີ౓ͷ੺ํภҠύϥϝʔλґଘੑ . . . .
͘͢͟Ӵ੕ʹΑΔຒ΋Εͨ AGN (ESO 005−G004) ͷ X ઢεϖΫτϧ . . .
FORCE Ӵ੕ͷ֓ཁ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
͘͢͟Ӵ੕౥ࡌͷ X ઢ CCDʮXISʯͰऔಘͨ͠ NXB εϖΫτϧ . . . . .
൓ಉ࣌‫਺ܭ‬๏ʹΑΔඇ X ઢόοΫάϥ΢ϯυআ‫ڈ‬ͷ֓೦ਤ . . . . . . . . .

1
2
3
4
6
6

2.1 Si ʹର͢Δޫࢠͷ൓Ԡஅ໘ੵͷΤωϧΪʔґଘੑ . . . . . . . . . . . . . .
2.2 ਅੑ൒ಋମɺn ‫ܕ‬ɺp ‫ܕ‬൒ಋମͷΤωϧΪʔόϯυਤ . . . . . . . . . . . .
2.3 p-n ઀߹ͷ֓೦ਤ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.4 όοΫόΠΞεిѹΛҹՃͨ͠ͱ͖ͷ p-n ઀߹ͷ֓೦ਤ . . . . . . . . . . .
2.5 MOSFET ͷ໛ࣜਤͱճ࿏ਤ . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.6 MOSFET ͷ֤ྖҬʹ͓͚Δνϟωϧͷ‫ܗ‬੒ . . . . . . . . . . . . . . . . . .
2.7 MOSFET ͷ 3 ঢ়ଶͷରԠؔ܎ͱిྲྀిѹಛੑ . . . . . . . . . . . . . . . .
2.8 ιʔε઀஍૿෯ճ࿏ͷճ࿏ਤͱখ৴߸౳Ձճ࿏ . . . . . . . . . . . . . . .
2.9 ιʔεϑΥϩΞճ࿏ͷճ࿏ਤͱখ৴߸౳Ձճ࿏ . . . . . . . . . . . . . . .
2.10 ιʔεϑΥϩΞճ࿏ͷೖग़ྗಛੑ . . . . . . . . . . . . . . . . . . . . . . .
2.11 RC ϩʔύεϑΟϧλʹ͓͚Δ೤ϊΠζ . . . . . . . . . . . . . . . . . . . .
2.12 NMOS Λྫʹͨ͠ 1/ f ϊΠζൃੜͷ֓೦ਤ . . . . . . . . . . . . . . . . . .
2.13 ҉ిྲྀൃੜ‫ݯ‬ͷ֓೦ਤ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8
12
12
13
14
15
17
17
18
19
22
22
23

3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8

27
28
30
31
32
33
33

SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ͷ 3 ࣍‫ߏݩ‬଄ . . . . . . . . . . . . . . . . . . . . . . .
Bulk CMOS ͱ SOI CMOS ͷஅ໘ਤ . . . . . . . . . . . . . . . . . . . . . .
ຒΊࠐΈ well ʹΑΔόοΫήʔτޮՌͷ཈੍ . . . . . . . . . . . . . . . . .
XRPIX γϦʔζͷ։ൃ࢙ . . . . . . . . . . . . . . . . . . . . . . . . . . . .
XRPIX ͷϐΫηϧճ࿏ . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
XRPIX ʹ͓͚Δ੍‫ޚ‬ಈ࡞ͷλΠϛϯάνϟʔτ . . . . . . . . . . . . . . .
XRPIX ʹ౥ࡌ͍ͯ͠Διʔε઀஍‫ܕ‬ͷ CSA ճ࿏ . . . . . . . . . . . . . . .
XRPIX ʹ͓͚Δɺม‫׵‬ήΠϯͱ BPW ͷαΠζͷؔ܎ɺ‫ͼٴ‬ಡΈग़͠ϊΠζͱม‫׵‬ήΠϯͷؔ܎ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.9 CDS ճ࿏Λ‫ؚ‬ΉϐΫηϧΞφϩάճ࿏ͷಈ࡞ͷྲྀΕ . . . . . . . . . . . . .
3.10 τϦΨճ࿏ͷಈ࡞ͷྲྀΕ . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.11 Πϕϯτ‫ۦ‬ಈಡΈग़͠ͷྲྀΕ . . . . . . . . . . . . . . . . . . . . . . . . . .
3.12 XRPIX ͷಡΈग़͠Ϙʔυ . . . . . . . . . . . . . . . . . . . . . . . . . . . .

34
36
38
39
40

v

ਤ໨࣍

3.13 ϑϨʔϜಡΈग़͠Ͱऔಘͨ͠ੜσʔλͱϖσελϧิਖ਼‫ޙ‬ͷώετάϥϜ
3.14 Πϕϯτ൑ఆͷΠϝʔδਤ . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.15 XRPIX2b Ͱऔಘͨ͠‫ݕ‬ग़ޮ཰ͷ X ઢΤωϧΪʔґଘੑ . . . . . . . . . . .
3.16 ैདྷͷߏ଄ (Single SOI) ʹؔ࿈͢Δ໰୊ͷΠϝʔδਤ . . . . . . . . . . . .
3.17 XRPIX3b Ͱऔಘͨ͠ 241 Am ͷ εϖΫτϧ . . . . . . . . . . . . . . . . . .
3.18 ैདྷͷߏ଄ (Single SOI) Λ࣋ͭ XRPIX6H Ͱऔಘͨ͠೾ߴ஋ͱ X ઢΤωϧΪʔͷؔ܎ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.19 SPring-8 X ઢϏʔϜরࣹࢼ‫Ͱݧ‬औಘͨ͠ 8 keV ͷεϖΫτϧ . . . . . . . .

41
43
44
45
45
46
47

4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8

Single SOI ߏ଄ͱ Pinned Depleted Diode (PDD) ߏ଄ͷൺֱ . . . . . . . . . 48
Single SOI, PDD ͦΕͧΕʹ͓͚ΔόοΫήʔτޮՌͷγϛϡϨʔγϣϯ݁Ռ 49
γϛϡϨʔγϣϯͰ࡞੒ͨ͠ PDD ߏ଄ͷ̏࣍‫ݩ‬ϙςϯγϟϧϚοϓ . . . 50
XRPIX6E ૉࢠͷ֎‫ͱ؍‬ઃ‫֓ܭ‬೦ਤ . . . . . . . . . . . . . . . . . . . . . . . 51
XRPIX6E ͷஅ໘ਤ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ X ઢΤωϧΪʔͱ೾ߴ஋ͷؔ܎ 53
XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ɺϐΫηϧຖͷήΠϯ͹Β͖ͭ 54
XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ɺήΠϯิਖ਼‫ޙ‬ͷ 57 Co ͷγϯάϧϐΫηϧΠϕϯτεϖΫτϧ . . . . . . . . . . . . . . . . . . . . . . . 54
4.9 ಡΈग़͠ϊΠζͱήΠϯͷؔ܎ . . . . . . . . . . . . . . . . . . . . . . . . 55
4.10 XRPIX6E αϒϐΫηϧຖʹද໘রࣹͰऔಘͨ͠ W-L X ઢεϖΫτϧ . . . 56
5.1 ೈ X ઢੑೳධՁʹ༻͍Δଟ৭‫ ޫܬ‬X ઢֱਖ਼γεςϜͷ֓೦ਤ . . . . . . .
5.2 ೈ X ઢੑೳධՁʹ͓͚Δ࣮ࡍͷηοτΞοϓ . . . . . . . . . . . . . . . . .
5.3 ߃Թ૧Λ༻͍ͨηοτΞοϓ . . . . . . . . . . . . . . . . . . . . . . . . . .
5.4 SDD Ͱऔಘͨ͠ X ઢεϖΫτϧ . . . . . . . . . . . . . . . . . . . . . . . .
5.5 X ઢΤωϧΪʔʹର͢Δ SDD ͷ‫ݕ‬ग़ޮ཰ . . . . . . . . . . . . . . . . . . .
5.6 XRPIX6E ϑϨʔϜಡΈग़͠Ͱऔಘͨ͠ೈ X ઢ (F-K, Al-K) ͷεϖΫτϧ .
5.7 XRPIX6E ϑϨʔϜಡΈग़͠Ͱଌఆͨ͠‫ݕ‬ग़ޮ཰ͷΤωϧΪʔґଘੑ . . .
5.8 τϦΨग़ྗͷΧ΢ϯτϚοϓ . . . . . . . . . . . . . . . . . . . . . . . . . .
5.9 ϑϨʔϜಡΈग़͠Ͱऔಘͨ͠ϖσελϧϚοϓ . . . . . . . . . . . . . . .
5.10 ϊΠζʹΑΔτϦΨग़ྗϨʔτͷτϦΨᮢ஋ిѹґଘੑ . . . . . . . . . .
5.11 XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ೈ X ઢ (Al-K) ͷεϖΫτϧ . .
5.12 ୯৭ X ઢʹର͢ΔτϦΨग़ྗϨʔτͷτϦΨᮢ஋ిѹґଘੑ . . . . . . . .
5.13 VX ͱ X ઢΤωϧΪʔͷઢ‫ ܎ؔܗ‬. . . . . . . . . . . . . . . . . . . . . . . .
5.14 XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱଌఆͨ͠‫ݕ‬ग़ޮ཰ͷΤωϧΪʔґଘੑ .
5.15 Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠εϖΫτϧΤωϧΪʔ෼ղೳͱᮢ஋ΤωϧΪʔ෼ղೳ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

58
58
60
61
61
62
63
65
65
67
68
69
69
70

6.1
6.2
6.3

74
75

XRPIX8 ͷ֓ཁ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
XRPIX8 ͷஅ໘ਤ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ैདྷͷ PDD ߏ଄ (XRPIX6E) ͱվྑΛՃ͑ͨ৽ͨͳ PDD ߏ଄ (XRPIX8) ͷൺֱ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

71

75

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ਤ໨࣍

6.4
6.5
6.6
6.7

XRPIX8 ͷ I-V ಛੑ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
XRPIX8 VBB , VBPW ؒͷిྲྀ஋ͷԹ౓ґଘੑ . . . . . . . . . . . . . . . . . .
ۭ๡૚ްͷόοΫόΠΞεిѹґଘੑଌఆ . . . . . . . . . . . . . . . . . .
XRPIX8 ϑϨʔϜಡΈग़͠ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ 57 Co, 241 AmͷγϯάϧϐΫηϧΠϕϯτεϖΫτϧ . . . . . . . . . . . . . . . . . . .
6.8 XRPIX8 ϑϨʔϜಡΈग़͠ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ X ઢΤωϧΪʔͱ೾ߴ஋ͷؔ܎ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.9 XRPIX8 Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ɺϐΫηϧຖͷήΠϯ͹Β͖ͭ
6.10 XRPIX8 Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ɺήΠϯิਖ਼‫ޙ‬ͷ 57 Co ͷγϯάϧϐΫηϧΠϕϯτεϖΫτϧ . . . . . . . . . . . . . . . . . . . . . . . .

78
79
80
82
83
84
85

7.1
7.2
7.3
7.4

XRPIX8 ϖσελϧͷ࿐ޫ࣌ؒґଘੑ . . . . . . . . . . . . . . . . . . . . . 87
࿐ޫ࣌ؒʹର͢Δϖσελϧͷ૿Ճ཰ͱϖσελϧͷ‫ݮ‬গྔͷؔ܎ . . . . 88ϑϨʔϜಡΈग़͠ͱΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱͷ೾ߴ஋ͷ‫ݮ‬গྔͷൺֱ . . . 89
RST PD ͷλΠϛϯάͷมߋલ‫͚͓ʹޙ‬ΔɺλΠϛϯάμΠΞάϥϜͱϖσελϧͷ࿐ޫ࣌ؒґଘੑͷൺֱ . . . . . . . . . . . . . . . . . . . . . . . 89
7.5 ैདྷͷϦηοτ੍‫ࠓͱޚ‬ճఏҊ͢Δ৽ͨͳϦηοτ੍‫͚͓ʹޚ‬ΔɺλΠϛϯάμΠΞάϥϜͱϖσελϧͷ࿐ޫ࣌ؒґଘੑͷൺֱ . . . . . . . . . . 90
7.6 XRPIX8 ҉ిྲྀͷԹ౓ґଘੑ . . . . . . . . . . . . . . . . . . . . . . . . . . 92
7.7 XRPIX8 ҉ిྲྀͷόοΫόΠΞεిѹґଘੑ . . . . . . . . . . . . . . . . . 92
7.8 CSA ճ࿏ͷϊΠζʹର͢Δ౳Ձճ࿏ . . . . . . . . . . . . . . . . . . . . . . 93
7.9 CSA ճ࿏ϊΠζͷཧ࿦‫݁ࢉܭ‬Ռ . . . . . . . . . . . . . . . . . . . . . . . . 97
7.10 ϑϨʔϜಡΈग़͠ͰಘΒΕͨϐΫηϧຖͷϖσελϧ෯ͷ෼෍ . . . . . . . 98
7.11 ϑϨʔϜಡΈग़͠ͰಘΒΕͨϐΫηϧຖͷ҉ిྲྀϊΠζͷ෼෍ . . . . . . . 99
7.12 ϐΫηϧຖͷಡΈग़͠ϊΠζͷ෼෍ . . . . . . . . . . . . . . . . . . . . . . 99
7.13 ৚݅ B ͱ৚݅ C ʹ͓͚ΔϐΫηϧຖͷಡΈग़͠ϊΠζͷ૬ؔ . . . . . . . . 100
7.14 CSA ճ࿏ͷήΠϯͱ CSA ճ࿏ϊΠζ͔Βܾ·Δηϯα༰ྔͷΧϥʔϚοϓ 102
7.15 XRPIX8 ʹ͓͚Δηϯα༰ྔͷ֓೦ਤ . . . . . . . . . . . . . . . . . . . . . 103
A.1
A.2
A.3
A.4

पลճ࿏ͷಈ࡞ͷྲྀΕ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
XRPIX6E όοΫόΠΞεిѹຖͷੜ೾ߴ஋Ϛοϓ . . . . . . . . . . . . . .
҉ిྲྀ໰୊ͷ‫ݪ‬ҼΛਪଌͨ͠ਤ . . . . . . . . . . . . . . . . . . . . . . . .
f (x), g(x) ͷৼΔ෣͍ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

107
109
110
113

vii

ද໨࣍

1.1

FORCE Ӵ੕౥ࡌͷೈ X ઢ‫ݕ‬ग़‫ʹث‬ର͢Δཁ‫ٻ‬ੑೳͱΰʔϧੑೳ . . . . . .

7

3.1

FORCE ͷཁ‫ٻ‬ੑೳͱ SingleSOI ߏ଄Λ΋ͭ XRPIX Ͱୡ੒͍ͯ͠Δੑೳͷൺֱ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

43

4.1

XRPIX6E ͷ࢓༷ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

52

5.1

SDD Ͱଌఆͨ͠ X ઢઈର‫ ౓ڧ‬. . . . . . . . . . . . . . . . . . . . . . . . .

60

6.1

XRPIX8 ͷ࢓༷ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

76

7.1

CSA ճ࿏ϊΠζͷ‫͢༻࢖ʹࢉܭ‬Δύϥϝʔλ·ͱΊ . . . . . . . . . . . . .

96

1

ୈ 1 ষ ࣍ੈ୅ X ઢࡱ૾෼ޫ‫ث‬ͷ։ൃಈ‫ػ‬
˙ 1.1ۜՏத৺‫ڊ‬େϒϥοΫϗʔϧͱ฼ۜՏͷ‫ڞ‬ਐԽͷղ໌

2019 ೥ɺEvent Horizon Telescope ʹΑΔి೾‫؍‬ଌͰɺϒϥοΫϗʔϧɾγϟυ΢ͷ௚઀ࡱ૾ʹॳΊͯ੒ޭͨ͠ͱൃද͞Εͨ [1]ɻࡱӨʹ੒ޭͨ͠ͷ͸ɺM87 ͷۜՏத৺ʹଘࡏ͢Δɺ௒‫ڊ‬େ࣭ྔϒϥοΫϗʔϧ (Supermassive Black Hole: SMBH) Ͱ͋ΔɻM87 ͚ͩͰ͸ͳ͘ɺଞͷ਺ଟ͘ͷۜՏத৺ʹ΋ɺଠཅ࣭ྔͷ 106 ഒΛ௒͑Δ SMBH ͕ଘࡏ͢Δɻۙ೥ͷ‫Ͱڀݚ‬ɺSMBH ͷ࣭ྔ͸ۜՏόϧδͷ࣭ྔͱ‫͘ڧ‬૬ؔ͢Δ͜ͱ͕Θ͔ͬͨ (ਤ 1.1)[2]ɻ
͜ͷ͜ͱ͸ɺSMBH ͱۜՏ͕‫͠܎ؔʹ͍ޓ‬ɺ“‫ڞ‬ਐԽ”͖ͯͨ͜͠ͱΛ‫͍ͯࠦࣔ͘͠ڧ‬ΔɻαΠζ͕ 10 ܻ΋ҟͳΔ SMBH ͱۜՏ͕ͲͷΑ͏ʹؔ܎͠ɺ‫ڞ‬ਐԽ͢Δͷ͔͸ະͩղ໌͞Ε͍ͯͳ͍ɻ͜ͷಾΛղ͖໌͔͢‫ݤ‬͸ɺSMBH ͷ੒௕աఔΛ୳Δ͜ͱɺ͢ͳΘͪɺ
SMBH ΁ͷ࣭ྔ߱ணʹΑΓ໌Δً͘͘ʮ‫׆‬ಈۜՏ֩ (Active Galactic Nuclei: AGN)ʯͷ‫؍‬
ଌͰ͋Δɻ

(a)

(b)

ਤ 1.1: (a) ۜՏͷ໛ࣜਤ [3]ɻ(b)SMBH ͷ࣭ྔ M• ͱۜՏόϧδͷ࣭ྔ Mbulge ͷ૬ؔਤ [4]ɻ͍྆࣠ͣΕ΋ଠཅ࣭ྔ M⊙ Ͱ‫֨ن‬Խ͍ͯ͠Δɻ

1.1.1 ‫׆‬ಈۜՏ֩ (AGN)ۜՏͷதʹ͸ɺத৺෦ͷඇৗʹ‫ྖ͍ڱ‬Ҭ͔ΒɺۜՏશମͷ໌Δ͞ʹඖఢ͢ΔΤωϧΪʔΛ์ࣹ͢Δ΋ͷ͕ଘࡏ͢Δɻ͜ͷΑ͏ͳۜՏΛ‫׆‬ಈۜՏɺͦͷத৺ͷίϯύΫτͳྖҬΛ

2

ୈ1ষ

࣍ੈ୅ X ઢࡱ૾෼ޫ‫ث‬ͷ։ൃಈ‫ػ‬‫׆‬ಈۜՏ֩ͱΑͿɻ‫׆‬ಈۜՏ֩͸ɺத৺ʹ͋Δ SMBH ʹ޲͔ͬͯपғͷ෺࣭͕߱ண͢Δ
ࡍʹղ์͢ΔॏྗΤωϧΪʔΛ‫͍ͯ͠ͱݯ‬ΔɻΑͬͯɺ࣭ྔ߱ணʹΑΓ SMBH ͕ “੒௕”͢Δ࠷தʹ͋Δ AGN ͷ‫؍‬ଌ͸ɺSMBH ͱۜՏͷ‫ڞ‬ਐԽͷղ໌ʹ͓͍ͯෆՄܽͰ͋Δɻ
SMBH ͷ੒௕աఔΛٞ࿦͢Δ্ͰɺAGN ͷʮޫ౓ؔ਺ʯ͕Α͘༻͍ΒΕΔɻޫ౓ؔ਺
ͱ͸ɺͲͷ໌Δ͞ͷఱମ͕Ͳͷఔ౓ଘࡏ͢Δ͔Λ໌Δ͞ͷؔ਺ͱͯ͠දͨ͠΋ͷͰ͋Δɻ
۩ମతʹ͸ɺ͋Δޫ౓ͷൣғ಺ʹ͋Δఱମʹ͍ͭͯɺ୯Ґମੵ͋ͨΓͷ‫ͯ͠ͱ౓ີ਺ݸ‬ఆٛ͞ΕΔɻ֤ޫ౓ൣғʹ͋Δ AGN ͷޫ౓ؔ਺ʹ͍ͭͯɺ੺ํภҠύϥϝʔλ z ʹର͢Δ
ґଘੑΛϓϩοτͨ͠΋ͷΛਤ 1.2 ʹࣔ͢ɻਤ 1.2 ͔ΒɺX ઢޫ౓ LX ͕େ͖͍΄Ͳɺޫ౓ؔ਺ͷϐʔΫΛͱΔ z ͕େ͖͘ͳΔ͜ͱ͕ಡΈऔΕΔɻҰൠʹɺX ઢޫ౓͸ϒϥοΫϗʔϧͷ࣭ྔΛ൓ө͢ΔͨΊɺਤ 1.2 ͸࣭ྔͷେ͖͍ SMBH ΄Ͳૣ‫ܗʹظ‬੒͞Εͨ͜ͱΛҙ
ຯ͢Δɻ͜ͷ܏޲͸ʮμ΢ϯαΠδϯάʯͱ‫ݺ‬͹Ε͓ͯΓɺʮখ͞ͳఱମͷ߹ମʹΑΓେ͖ͳఱମ΁ͱਐԽ͢Δʯͱ͍͏ඳ૾ͱਅ‫͋Ͱٯ‬Δ͜ͱΛ͍ࣔࠦͯ͠Δɻ

ਤ 1.2: 2-10 keV ଳҬͰͷ AGN ͷۭؒ਺ີ౓ͷ੺ํภҠύϥϝʔλґଘੑ [5]ɻԣ࣠ʹ੺ํภҠύϥϝʔλ zɺॎ࣠ʹ AGN ͷۭؒີ౓ φ Λ͍ࣔͯ͠Δɻ

1.1.2 ʮຒ΋Εͨʯ‫׆‬ಈۜՏ֩ͷ୳ࠪ๯಄Ͱड़΂ͨ‫ڞ‬ਐԽΛղ໌͢ΔͨΊʹ͸ɺ੒௕աఔʹ͋Δ AGN Λௐࠪ͢Δඞཁ͕͋Δɻ
੒௕աఔʹ͋Δ AGN ͸ɺΨε΍ਖͳͲͷपғ෺࣭1 ʹΑΓਂ͘ʮຒ΋Εͨʯঢ়ଶʹ͋Δɻ
AGN ͷ੒௕͸࣭ྔ߱ண͕୲͍ͬͯΔͨΊɺຒ΋Εͨ AGN ͸ɺҰൠతͳΨε΍ਖʹʮຒ΋Ε͍ͯͳ͍ʯAGN ͱ͸ਐԽஈ֊͕ҟͳΓɺSMBH ͕·͞ʹ੒௕͍ͯ͠Δ‫ݱ‬৔ͩͱߟ͑
ΒΕΔɻ͔͠͠ɺຒ΋Εͨ AGN ͸ɺ10 keV ҎԼͷೈ X ઢଳҬͰ‫ٵ‬ऩΛड͚΍͍ͨ͢Ίɺத৺͔֩Βͷ์ࣹ͕‫؍‬ଌ͠ʹ͍͘ɻͦͷͨΊɺ͜Ε·Ͱͷ‫؍‬ଌͰ͸ɺ‫ٵ‬ऩ͕গͳ͍ AGN
ͷΈ͕બ୒తʹ‫͖͔ͨͯͬͭݟ‬ɻਤ 1.2 ͸ 2–10 keV Ͱͷ݁ՌͰ͋ΔͨΊɺ‫ٵ‬ऩͷগͳ͍
1

SMBH ΛऔΓ‫͘ר‬Α͏ʹଘࡏ͢ΔɺΨε΍ਖͰߏ੒͞ΕΔυʔφπঢ়ͷྖҬʮτʔϥεʯΛࢦ͢ɻ

1.1. ۜՏத৺‫ڊ‬େϒϥοΫϗʔϧͱ฼ۜՏͷ‫ڞ‬ਐԽͷղ໌

3

AGN ʹ‫͋Ͱ਺ؔ౓ޫͨͬݶ‬Δɻ͜͜ʹຒ΋Εͨ AGN ΛՃ͑Δ͜ͱͰɺਤ 1.2 ͔Βࣔࠦ͞ΕΔμ΢ϯαΠδϯάͷඳ૾ࣗମ͕มΘΔՄೳੑ͕͋Δɻ‫ڞ‬ਐԽͷશ๴Λ໌Β͔ʹ͢Δʹ
͸ɺຒ΋Εͨ AGN Λ‫ؚ‬Ίͯޫ౓ؔ਺Λܾఆ͢Δඞཁ͕͋Γɺ͜ΕΛ໨తͱͨ͠ 10 keV Ҏ্ͷߗ X ઢ‫؍‬ଌ͕‫ٻ‬ΊΒΕΔɻຒ΋Εͨ AGN Λ‫ؚ‬Ίͨޫ౓ؔ਺ͷ࠶ߏ੒Λߦ͏ʹ͋ͨΓॏཁͱͳΔͷ͕ɺ޿ଳҬ‫؍‬ଌͱߴ‫؍౓ײ‬ଌͷཱ྆Ͱ͋Δɻຒ΋Εͨ AGN ͷྫͱͯ͠ɺESO 005−G004 ͷ͘͢͟Ӵ੕ʹΑΔεϖΫτϧΛ 1.3 ʹࣔ͢ɻத৺͔֩Βͷ์ࣹͷ͏ͪ 10 keV Ҏ্ͷߗ X ઢಁա੒෼͕
୎ӽ͍ͯ͠Δ͜ͱ͕Θ͔Δɻ͜ͷΑ͏ͳຒ΋Εͨ AGN Λଟ਺ಉఆ͢Δʹ͸ɺਤ 1.3 ͷΑ͏ͳεϖΫτϧͷಛ௃ɺ͢ͳΘͪ 10 keV Ҏ্ͷߗ X ઢଳҬͰͷ࿈ଓ੒෼Λଊ͑Δඞཁ͕͋Δɻ·ͨɺԕํͷ AGN ͔Β์ࣹ͞ΕΔ X ઢ͸ɺ੺ํภҠʹΑΓ௿ΤωϧΪʔଆʹγϑτ͢ΔͨΊɺೈ X ઢଆͷ‫؍‬ଌ΋ॏཁͰ͋Δɻ͕ͨͬͯ͠ɺຒ΋Εͨ AGN ୳ࠪʹ͸ɺೈ X
ઢόϯυ͔Β 10 keV Ҏ্ͷߗ X ઢόϯυʹ͔͚ͯ෯޿͍ΤωϧΪʔଳҬΛΧόʔ͢Δ͜
ͱ͕ཁ‫͞ٻ‬ΕΔɻ‫ط‬ଘͷ X ઢఱจӴ੕Ͱ͸ɺຒ΋Εͨ AGN ͷ໢ཏతͳ‫؍‬ଌʹ͸ෆे෼Ͱ͋Δɻྫ͑͹ɺߗ X ઢଳҬͰ‫࠷ࡏݱ‬΋‫౓ײ‬ͷྑ͍ X ઢఱจӴ੕ NuS T AR ͸ɺ3–79 keV ͱ͍͏޿ଳҬΛΧόʔ͍ͯ͠Δɻ͔͠͠ɺz = 3 ͷԕํʹ͋Δఱମͷ੩ࢭ‫͔ܥ‬Β์ࣹ͞ΕΔ 10 keV ͷ X
ઢ͸ 2.5 keV ͱͯ͠‫؍‬ଌ͞ΕΔͨΊɺz > 3 ͷຒ΋Εͨ AGN ͷ‫؍‬ଌʹ͸ద͞ͳ͍ɻ͞Βʹɺຒ΋Εͨ AGN ͕ਤ 1.2 ͱಉ͡ޫ౓ؔ਺ʹͳΔͱԾఆ͢Δͱɺ΄ͱΜͲͷޫ౓ൣғʹ
͋Δ AGN ͷ‫౓ີ਺ݸ‬ϐʔΫΛΧόʔͰ͖ͳ͍ [7]ɻͦ͜Ͱ NuS T AR ΑΓ΋͞Βʹ௿ΤωϧΪʔʹ‫౓ײ‬Λ֦͛ͨɺ৽ͨͳ޿ଳҬ X ઢࡱ૾Ӵ੕͕ඞཁͰ͋Δɻ

ਤ 1.3: ͘͢͟Ӵ੕ʹΑΔຒ΋Εͨ AGN (ESO 005−G004) ͷ X ઢεϖΫτϧ [6]ɻ੨ઢ: पғ෺࣭Λಁաͨ͠ߗ X ઢɺϚθϯλഁઢ: पғ෺࣭ͷ͔ܺؒΒ࿙Εग़ͨ͠ X ઢɺҰ఺࠯ઢ(੨): ௿ి཭మ͔Βͷًઢɺ੺ઢ: શϞσϧͷ૯࿨ɻ

4

˙ 1.2

ୈ1ষ

࣍ੈ୅ X ઢࡱ૾෼ޫ‫ث‬ͷ։ൃಈ‫ػ‬࣍ੈ୅ͷ޿ଳҬ X ઢࡱ૾෼ޫӴ੕ FORCE ʹ౥ࡌ༧ఆͷ Si ൒ಋମ‫ݕ‬ग़‫ث‬զʑ͸ɺ2020 ೥୅ͷଧ্ͪ͛Λ໨ࢦ͢ɺ࣍ੈ୅ͷ޿ଳҬ X ઢࡱ૾෼ޫӴ੕ FORCE ‫ܭ‬ըΛਪਐ͍ͯ͠Δ [7, 8, 9]ɻFORCE ‫ܭ‬ըͷओͳՊֶ໨త͸ɺຒ΋Εͨ AGN Λ‫ؚ‬Μͩ໢ཏత୳ࠪΛߦ͍ɺSMBH ͱͦͷ฼ۜՏͷ‫ڞ‬ਐԽͷղ໌͢Δ͜ͱͰ͋Δɻߴ‫౓ײ‬ɾ޿ଳҬ‫؍‬ଌΛཱ྆͢ΔͨΊʹ͸ɺFORCE Ӵ੕ʹ౥ࡌ͞ΕΔ X ઢϛϥʔͱ‫ݕ‬ग़‫ʹث‬͸༷ʑͳཁ‫͕ٻ‬՝͞ΕΔɻߴ‫؍౓ײ‬ଌΛߦ͏ͨΊʹ͸ɺඇ X ઢόοΫάϥ΢ϯυ (Non
X-ray Background: NXB) ͱ X ઢόοΫάϥ΢ϯυΛ྆ํΛԼ͛Δඞཁ͕͋ΔɻNXB ͸ Xઢ‫ݕ‬ग़‫Ͱث‬আ‫͢ڈ‬Δ͜ͱΛ‫ݕ‬౼͓ͯ͠Γɺৄࡉ͸ 1.2.1 અͰड़΂Δɻରͯ͠ X ઢόοΫάϥ΢ϯυ͸ɺX ઢϛϥʔͷ֯౓෼ղೳΛ্͛ͯର৅ఱମͱͦΕҎ֎ͷఱମ͔Βͷ์ࣹͱۭؒతʹ෼ղ͢Δ͜ͱͰ௿‫͢ݮ‬Δɻ·ͨɺ޿ଳҬ‫؍‬ଌΛߦ͏ͨΊͷखஈͱͯ͠ɺΤωϧΪʔଳҬʹΑΓ‫౓ײ‬ͷҟͳΔෳ਺ͷ‫ݕ‬ग़‫ث‬Λ૊Έ߹ΘͤΔ͜ͱ͕ߟ͑ΒΕΔɻX ઢ͸ߴΤωϧΪʔ΄Ͳ‫ݮ‬ਰ௕͕େ͖͍ͨΊɺೖࣹଆ͔Βೈ X ઢ‫ݕ‬ग़‫ث‬ɺߗ X ઢ‫ݕ‬ग़‫ث‬Λ഑ஔ͢Δ͜ͱͰ޿ଳҬΛΧόʔͰ͖ΔɻҎ্ͷཁ‫ٻ‬Λୡ੒͢ΔͨΊɺFORCE Ӵ੕Ͱ͸ <15′′ (Half Power Diameter: HPD) ͷߴ֯౓෼ղೳΛ΋ͭଟ૚ບεʔύʔϛϥʔ [10] ͱɺ1–80 keV ͷ޿ଳҬʹ‫౓ײ‬Λ΋ͭϋΠϒϦου‫ ܕ‬X ઢ‫ݕ‬ग़‫ث‬ʮWideband Hybrid X-ray Imager (WHXI)ʯ[11] Λ౥ࡌ༧ఆͰ͋Δ (ਤ
1.4)ɻ۩ମతʹ͸ɺNuS T AR ΑΓ΋ 5 ഒྑ͍֯౓෼ղೳʹΑΓɺ1 ܻߴ͍‫( ౓ײ‬10–40 keVͰ ∼ 3 × 10−15 erg cm−2 s−1 ) Λ࣮‫͖Ͱݱ‬Δ΄͔ɺNuS T AR ΑΓ௿ΤωϧΪʔଆͷ 1 keV ʹ΋‫౓ײ‬Λ΋ͭɻຊम࢜࿦จͰ͸ɺWHXI Λߏ੒͢Δ Si ൒ಋମ‫ݕ‬ग़‫ث‬ͷ։ൃΛςʔϚʹ͍ͯ͠ΔͨΊɺWHXI ʹ͍ͭͯ۷ΓԼ͛ͯ঺հ͢Δɻ

X-ray Super Mirror

Wideband Hybrid
X-ray Imager (WHXI)

ਤ 1.4: FORCE Ӵ੕ͷ֓ཁɻ

1.2. ࣍ੈ୅ͷ޿ଳҬ X ઢࡱ૾෼ޫӴ੕ FORCE ʹ౥ࡌ༧ఆͷ Si ൒ಋମ‫ݕ‬ग़‫ث‬5

1.2.1 ϋΠϒϦου‫ ܕ‬X ઢ‫ݕ‬ग़‫ ث‬WHXI
1–80 keV ΛΧόʔ͢Δ‫ݕ‬ग़‫ͯ͠ͱث‬ɺFORCE ‫ܭ‬ըͰ͸ϋΠϒϦου‫ ܕ‬X ઢ‫ݕ‬ग़‫ ث‬WHXI
ͷ౥ࡌΛ‫ݕ‬౼͍ͯ͠ΔɻWHXI ͸ɺ1–20 keV Λ୲౰͢Δ Si ‫ݕ‬ग़‫ ͱث‬20–80 keV Λ୲౰͢Δ CdTe ‫ݕ‬ग़‫ث‬Λ૊Έ߹Θͤͨߏ଄Λ͓ͯ͠ΓɺX ઢೖࣹଆ͔ΒॱʹɺSi ‫ݕ‬ग़‫ث‬ɺCdTe ‫ݕ‬ग़‫ث‬Λ഑ஔ͢Δ͜ͱͰ 1–80 keV ʹ‫౓ײ‬Λ΋ͨͤΔɻ
WHXI Λߏ੒͢Δ‫ݕ‬ग़‫ʹث‬ඞཁͳͷ͸ɺߴ͍όοΫάϥ΢ϯυআ‫ڈ‬ೳྗͰ͋Δɻ‫ߦݱ‬ͷ
X ઢఱจӴ੕ʹ౥ࡌ͞Ε͍ͯΔೈ X ઢ‫ݕ‬ग़‫ث‬͸ɺCharge-Coupled Device (CCD) Ͱ͋ΔɻX ઢ CCD ͸ɺਫ਼ີ෼ޫΛՄೳʹ͢ΔϑΝϊ‫ݶ‬ք2 ʹഭΔඇৗʹ༏ΕͨΤωϧΪʔ෼ղೳ(e.g., 130 eV at 5.9 keV in FWHM[12]) ͱɺߴ͍Ґஔ෼ղೳͷཁ݅Λຬͨ͢খ͍͞ϐΫηϧαΠζ ∼ 20 µm × 20 µm Λ༗͢ΔͨΊɺ͜Ε·Ͱ਺े೥ʹΘͨΓ X ઢఱจֶΛ‫ݗ‬Ҿ͖ͯͨ͠ (e.g., [12, 13, 14, 15])ɻ͔͠͠ɺCCD ʹ͸ɺߗ X ઢ‫؍‬ଌ΋ॏࢹ͢Δ FORCE Ӵ੕ʹͱͬͯக໋తͳܽ఺͕͋ΔɻͦΕ͸ɺ! 10 keV Ͱͷඇ X ઢόοΫάϥ΢ϯυ (NXB) ͕ߴ͍ͱ͍͏໰୊Ͱ͋Δɻਤ 1.5 ʹɺ͘͢͟Ӵ੕ͰಘΒΕͨ NXB εϖΫτϧΛࣔ͢ɻNXB ͕ߴΤωϧΪʔଆͰ୎ӽ͠ɺ! 10 keV Ͱͷ‫؍‬ଌ͸ࠔ೉Ͱ͋Δ͜ͱ͕Θ͔Δɻ͜ͷΑ͏ͳߴΤωϧΪʔଳҬͰ‫ݦ‬ஶͳ NXB ͸ɺओʹߴΤωϧΪʔՙిཻࢠ΍ γ ઢ͕‫؍‬ଌࢹ໺֎͔ΒᝑମΛ؏௨ͯ͠‫ݕ‬ग़‫ʹث‬ೖࣹ͢Δ͜ͱͰҾ͖‫͜͞ى‬ΕΔɻ͜ͷ NXB Λআ‫͢ڈ‬ΔํࡦΛ‫ݟ‬ग़͞ͳ͚Ε͹ɺ޿ଳҬ‫؍‬ଌ͸࣮‫͍ͳ͖Ͱݱ‬ɻ͜ͷ໰୊ͷղܾࡦͱͯ͠ɺզʑ͸൓ಉ࣌‫਺ܭ‬๏Λ༻͍Δ͜ͱΛ‫ݕ‬౼͍ͯ͠Δ (ਤ 1.6)ɻ
‫ݕ‬ग़‫ث‬ͷपΓΛγϯνϨʔλʹΑΔΞΫςΟϒγʔϧυͰ෴͏͜ͱͰɺ‫ݕ‬ग़‫ͱث‬ΞΫςΟϒγʔϧυ͕ಉ࣌ʹώοτͨ͠ΠϕϯτΛ NXB ͱͯ͠আ‫͢ڈ‬Δͱ͍͏ख๏Ͱ͋Δɻ͜ͷ൓ಉ࣌‫਺ܭ‬๏ʹΑΔ NXB ͷআ‫ڈ‬͸ɺͻͱΈӴ੕Ͱ΋ޮՌతͰ͋Δ͜ͱΛ࣮ূࡁΈͰ͋Δ[17]ɻͻͱΈӴ੕ͷ࣮੷͔ΒɺΞΫςΟϒγʔϧυͷϨʔτ͸ ∼ 10 kHz[18] Ͱ͋ΔͨΊɺ‫ݕ‬ग़‫ʹث‬͸ ∼ 10 µs ͷ࣌ؒ෼ղೳ͕ཁ‫͞ٻ‬ΕΔɻ
‫ݱ‬ঢ়ɺFORCE ͷཁ‫ٻ‬Λશͯຬͨ͢ೈ X ઢ‫ݕ‬ग़‫ث‬͸ଘࡏ͠ͳ͍ɻX ઢ CCD ͸৴߸ిՙΛిՙ‫ݕ‬ग़෦·Ͱసૹ͢Δಈ࡞͕ϘτϧωοΫͱͳΓɺ਺ඵఔ౓ͱ͍͏࣌ؒ෼ղೳͷͨΊɺ൓ಉ࣌‫਺ܭ‬๏ʹ༻͍Δͷ͸ෆద੾Ͱ͋Δɻ10 µs ͷ࣌ؒ෼ղೳΛ࣮‫ݱ‬Մೳͳ‫ݕ‬ग़‫ͯ͠ͱث‬ɺզʑ͸ CMOS Πϝʔδηϯαʹண໨ͨ͠ (ୈ 2 ষ)ɻ֤ըૉʹಡΈग़͠ճ࿏Λ࣮૷Ͱ͖Δͱ
͍͏ಛ௃Λར༻͠ɺ֤ըૉʹΠϕϯττϦΨ৘ใΛग़ྗ͢Δ‫ػ‬ೳΛಋೖ͢Δ͜ͱͰɺώοτλΠϛϯά৘ใͷऔಘΛՄೳʹ͢Δɻ·ͨɺ‫ߦݱ‬ͷ CCD ͱಉ͡ Si ൒ಋମΛ༻͍Ε͹ɺ‫ݪ‬ཧతʹ͸ CCD ͱಉ౳ͷ෼ޫੑೳΛ࣮‫ݱ‬ՄೳͰ͋Δɻ͔͠͠ɺ‫ݱ‬ଘͷ CMOS Πϝʔδηϯαʹ͸ɺX ઢʹ‫౓ײ‬Λ΋ͨͤΔͨΊͷް͍ۭ๡૚ͱτϦΨग़ྗ‫ػ‬ೳΛ݉Ͷඋ͑ͨ΋ͷ͸ଘࡏ͠ͳ͍ɻͦ͜Ͱզʑ͸ɺX ઢ Si ‫ݕ‬ग़‫ث‬ʮXRPIXʯΛ։ൃ͍ͯ͠Δ [19]ɻXRPIX ͸ɺ
Silicon-On-Insulator (SOI) ٕज़Λ༻͍ͨɺ೔ຊಠࣗͷ X ઢ CMOS ΠϝʔδηϯαͰ͋Δɻզʑ͸ɺ1–20 keV Λ୲౰͢Δೈ X ઢ‫ݕ‬ग़‫ͯ͜͠ͱث‬ͷ XRPIX Λ࠾༻͠ɺFORCE ͷ࣮‫ݱ‬
Λ໨ࢦ͢ɻ

2

ৄࡉ͸અ 2.5.2 Λࢀর͞Ε͍ͨ

6

ୈ1ষ

Counts/sec/keV

10−1

࣍ੈ୅ X ઢࡱ૾෼ޫ‫ث‬ͷ։ൃಈ‫ػ‬

Background
SuzakuNXB
Spectrum ofof
SuzakuXIS XIS

10−2

High
Background
10−3

2

1

5

10

Energy [keV]ਤ 1.5: ͘͢͟Ӵ੕౥ࡌͷ X ઢ CCDʮXISʯͰऔಘͨ͠ NXB εϖΫτϧ [16]ɻεϖΫτϧ
ʹ‫ݟ‬ΒΕΔًઢ͸‫ݕ‬ग़‫ث‬ɺᝑମ༝དྷͷόοΫάϥ΢ϯυͰ͋Δɻਫ৭Ͱࣔͨ͠ 6 keV Ҏ্ͷଳҬͰ͸ɺNXB ͕ඇৗʹେ͖͍͜ͱ͕Θ͔Δɻ

望遠鏡からの入射 X 線
観測視野

Hit!

Hit!
Hit!

宇宙線
(非 X 線バックグラウンド)

X-ray

X-ray

20-80 keV

1-20 keV

Si Sensor
CdTe Sensor

アクティブシールドਤ 1.6: ൓ಉ࣌‫਺ܭ‬๏ʹΑΔඇ X ઢόοΫάϥ΢ϯυআ‫ڈ‬ͷ֓೦ਤɻ1.2. ࣍ੈ୅ͷ޿ଳҬ X ઢࡱ૾෼ޫӴ੕ FORCE ʹ౥ࡌ༧ఆͷ Si ൒ಋମ‫ݕ‬ग़‫ث‬7

1.2.2 FORCE Ӵ੕౥ࡌͷೈ X ઢ‫ݕ‬ग़‫ʹث‬ର͢Δཁ‫ٻ‬ੑೳ࠷‫ʹޙ‬ɺೈ X ઢ‫ݕ‬ग़‫ ث‬XRPIX ʹཁ‫͞ٻ‬ΕΔੑೳͱ࢓༷ʹ͍ͭͯද 1.1 ʹ·ͱΊΔɻཁ‫ٻ‬ੑೳ͸ඞ࣮ͣ‫͖΂͢ݱ‬஋ɺΰʔϧੑೳ͸ඞਢ৚݅Ͱ͸ͳ͍͕ɺୡ੒͍ͨ͠໨ඪ஋Λද͍ͯ͠Δɻ
ද 1.1 ͷதͰɺಛʹॏཁͳ߲໨͸ɺҎԼͷ 4 ఺Ͱ͋Δɻ

• 1–20 keV Ͱࡱ૾෼ޫ͕Մೳ
޿ଳҬεϖΫτϧ͔Βຒ΋Εͨ AGN Λಉఆ͢ΔͨΊɻ
• 6 keV Ͱ 300 eV (FWHM) ͷ༏Εͨ෼ޫੑೳ
AGN Λಛ௃෇͚Δమًઢ (Mn-Kα: 5.9 keV, Mn-Kβ: 6.5 keV) Λ෼཭͢ΔͨΊɻ
• X ઢೖࣹଆͷബ͍ෆ‫ײ‬૚ް (Si Ͱ 1 µm)‫ݮ‬ਰ௕ͷ୹͍ 1 keV ෇ۙͷೈ X ઢͷ‫ݕ‬ग़͢ΔͨΊɻ• ༏Εͨ࣌ؒ෼ղೳ (10 µs)ΞΫςΟϒγʔϧυͱͷ൓ಉ࣌܎਺ॲཧΛߦ͍ɺ௿όοΫάϥ΢ϯυΛ࣮‫͢ݱ‬ΔͨΊɻ

ද 1.1: FORCE Ӵ੕౥ࡌͷೈ X ઢ‫ݕ‬ग़‫ʹث‬ର͢Δཁ‫ٻ‬ੑೳͱΰʔϧੑೳ߲໨ཁ‫ٻ‬ੑೳ
ΰʔϧੑೳΤωϧΪʔόϯυ
1-20 keV
0.5-20 keVΤωϧΪʔ෼ղೳ (6 keV)
300 eV (FWHM) 150 eV (FWHM)ಡΈग़͠ϊΠζ
10 e−
3 e−
ཪ໘ෆ‫ײ‬૚ް (Մࢹޫःஅບ: Al 0.2 µm ‫ؚ‬Ή)
1 µm
0.5 µmϐΫηϧαΠζ200 µm36 µm
ΠϝʔδϯάΤϦΞ
20 mm × 20 mm 44 mm × 44 mm
࣌ؒ෼ղೳ
10 µs
ಈ࡞Թ౓
−15◦ C8ୈ 2 ষ X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬ຊষͰ͸ɺFORCE ౥ࡌʹ޲͚ͯ։ൃΛਐΊ͍ͯΔ X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬Λ֓આ͢Δɻ·ͣɺޫࢠΛిՙʹม‫͢׵‬Δʮηϯα෦ʯͷ‫ͳͱૅج‬Δɺʮޫͱ෺࣭ͷ૬‫ޓ‬࡞༻ʯ[20]ɺʮ൒ಋମ෺ཧʯ[21] ʹ͍ͭͯ؆୯ʹઆ໌͢Δɻষ‫ޙ‬൒Ͱ͸ɺి‫ؾ‬৴߸ͱͯ͠
ಡΈग़͢ʮ‫ݕ‬ग़෦ʯͱͯ͠ɺCMOS ͷ‫ૅج‬ʮMOSFETʯͱͦΕΛ༻͍ͨʮCMOS Ξφϩάճ࿏ʯʹ͍ͭͯ঺հ͢Δ [21, 22, 23, 24, 25]ɻষ࠷‫ʹޙ‬ɺX ઢ CMOS Πϝʔδηϯαͷ
ੑೳࢦඪʹ͍ͭͯड़΂Δɻ

˙ 2.1

ޫͱ෺࣭ͷ૬‫༻࡞ޓ‬ߴΤωϧΪʔͷޫࢠ͕෺࣭ʹೖࣹ͢Δͱɺߏ੒‫ࢠݪ‬΍ͦͷ‫ي‬ಓిࢠͱޫి‫ٵ‬ऩɺίϯϓτϯࢄཚɺిࢠରੜ੒ͳͲͷ૬‫༻࡞ޓ‬Λ͢Δɻͦͷͳ͔Ͱɺ௿ΤωϧΪʔଆͷ X ઢʹରͯ͠͸ɺ‫ޙ‬ड़͢ΔΑ͏ʹ΄ͱΜͲޫి‫ٵ‬ऩͷΈ͕‫͜ى‬ΔɻຊઅͰ͸ɺ௿ΤωϧΪʔ X ઢΛ‫ݕ‬ग़͢Δ্ͰॏཁͱͳΔɺޫి‫ٵ‬ऩʹ͍ͭͯ঺հ͢Δɻ
104

Cross Section [cm2/g]

1000
100 光電吸収101コンプトン散乱

0.1

電子対生成

0.01
10−3
1

10

100

1000

104

105

Photon Energy [keV]ਤ 2.1: Si ʹର͢Δޫࢠͷ൓Ԡஅ໘ੵͷΤωϧΪʔґଘੑ [26]ɻ

2.1. ޫͱ෺࣭ͷ૬‫༻࡞ޓ‬

9

2.1.1 ޫి‫ٵ‬ऩޫࢠ͕෺࣭ʹೖࣹ͢Δͱɺ‫ي‬ಓిࢠ͕ͦͷޫࢠͷΤωϧΪʔΛ‫ٵ‬ऩ͠ɺిࢠ֪͔Β์ग़͞ΕΔɻ͜ͷաఔΛޫి‫ٵ‬ऩͱΑͿɻޫి‫ٵ‬ऩʹ͓͍ͯɺΤωϧΪʔ hν Λ΋ͭޫࢠ͕‫ي‬ಓిࢠʹ‫ٵ‬ऩ͞Εͨͱ͖ʹ์ग़͞ΕΔޫిࢠͷΤωϧΪʔ Ee− ͸ɺ࣍ࣜͷΑ͏ʹදͤΔɻ

Ee− = hν − Eb

(2.1)

͜͜ͰɺEb ͸ిࢠ֪ͷ݁߹ΤωϧΪʔͰ͋Δɻ͜ͷաఔͷ൓Ԡஅ໘ੵ͸ɺޫࢠͷΤωϧΪʔͱ‫ٵ‬ऩ෺࣭ͷ‫ࢠݪ‬൪߸ Z ʹରͯ͠ ∝ (hν)−3.5 Z n , (n ͸ 4–5 ͷ஋ΛͱΔ) ͷґଘੑΛ࣋ͭɻಛʹɺΤωϧΪʔґଘੑʹ͍ͭͯɺଞͷ૬‫ͱ༻࡞ޓ‬൓Ԡஅ໘ੵΛൺֱ͢Δͱ (ਤ 2.1)ɺ௿
ΤωϧΪʔଆͷ X ઢ͸΄΅ޫి‫ٵ‬ऩ͕‫͜ى‬Δͱߟ͑ͯΑ͍͜ͱ͕Θ͔Δɻ

2.1.2 ޫి‫ٵ‬ऩҐஔೖࣹͨ͠ X ઢ͕Ͳͷਂ͞Ͱ‫ٵ‬ऩ͞ΕΔ͔͸֬཰తʹܾ·Δ͕ɺͦͷ֬཰͸ೖࣹ X ઢͷΤωϧΪʔʹґଘ͢Δɻೖࣹ X ઢͷ‫( ౓ڧ‬ϑϥοΫεɺ΋͘͠͸ޫࢠ਺) Λ I0 ͱ͢Δͱɺ෺࣭தΛਂ͞ x ಁա͢Δޫࢠ਺ I ͸ɺ࣍ࣜͷΑ͏ʹදͤΔɻ
!
"x
I = I0 exp −(2.2)
λM (E)
͜͜ͰɺλM (E) ͸ೖࣹ X ઢͷΤωϧΪʔ E ʹର͢Δഔ࣭ M Ͱͷ‫ݮ‬ਰ௕ (Attenuation Length)Ͱ͋Δɻࣜ 2.2 ΑΓɺ෺࣭ද໘͔Βਂ͞ x ·Ͱͷಁա཰ͱ‫ٵ‬ऩ཰͸ɺͦΕͧΕ I/I0 , 1 − I/I0
Ͱ͋Δɻ

2.1.3 ిࢠӢͷੜ੒ޫి‫ٵ‬ऩʹΑͬͯඈͼग़ͨ͠ޫిࢠ͸ɺͦͷӡಈΤωϧΪʔΛࣦ͏·Ͱʹɺଞͷ‫ي‬ಓిࢠͱিಥ͠ଓ͚ͯଟ਺ͷిࢠɾਖ਼޸ରΛੜ੒͢ΔɻҰํͰɺޫిࢠΛ์ग़ۭ͍ͯͨ͠ి
ࢠ‫ي‬ಓʹ͸ɺ֎֪ͷଋറిࢠ͕ભҠͯ͠‫ج‬ఈঢ়ଶʹ໭Δ͕ɺ͜ͷͱ͖ 2 ௨Γͷ‫ͦͰܗ‬ͷΤωϧΪʔࠩΛ֎෦ʹ์ग़͢ΔɻͦΕ͸ɺΦʔδΣిࢠΛ์ग़͢Δ৔߹ͱ‫ ޫܬ‬X ઢΛ์ग़
͢Δ৔߹Ͱ͋ΔɻΦʔδΣిࢠͷ৔߹͸ɺޫిࢠͱಉ༷ͷաఔͰిࢠɾਖ਼޸ରΛੜ੒͢Δ
ͨΊɺ݁‫ہ‬ೖࣹ X ઢͷΤωϧΪʔʹରԠͨ͠‫਺ݸ‬ͷిࢠɾਖ਼޸ର͕ੜ੒͞ΕΔɻ‫ ޫܬ‬X
ઢͷ৔߹ɺಛʹޫి‫ٵ‬ऩ͞Εͣʹ‫ݕ‬ग़‫ث‬ͷ֎෦΁ಀ͛ग़ͨ͠৔߹͸ɺ‫ ޫܬ‬X ઢͷΤωϧΪʔ෼͚ͩগͳ͍਺ͷిࢠɾਖ਼޸ର͕ੜ੒͞ΕΔɻεϖΫτϧʹ͓͍ͯɺ͜ͷΑ͏ͳΠϕϯτ༝དྷͷΤωϧΪʔϐʔΫ͸ΤεέʔϓϐʔΫͱ‫ݺ‬͹ΕΔɻྫ͑͹ɺSi ‫ݕ‬ग़‫ث‬ͷ৔߹͸ɺΤωϧΪʔશͯΛిࢠɾਖ਼޸ରʹม‫ͨ͠׵‬Πϕϯτʹ૬౰͢ΔϝΠϯϐʔΫʹର͠ɺ
1.74 keV (Si-Kα ͷ‫ ޫܬ‬X ઢΤωϧΪʔ) ͚ͩ௿ΤωϧΪʔଆʹΤεέʔϓϐʔΫ͕͋ΒΘΕΔɻ‫ ޫܬ‬X ઢ͕์ग़͞ΕΔ֬཰ (‫ޫܬ‬ऩ཰) ͸ɺSi ͷ৔߹ͩͱ 0.047 ఔ౓Ͱ͋Δɻೖࣹ X ઢʹΑΓੜ੒͞ΕΔిࢠɾਖ਼޸ରͷ‫͑ߟ͍ͯͭʹ਺ݸ‬ΔɻSi ͷόϯυΪϟοϓΤ
ωϧΪʔ͸ Eg = 1.12 eV Ͱ͋Δ͕ɺೖࣹ X ઢͷΤωϧΪʔΛόϯυΪϟοϓΤωϧΪʔͰׂͬͨ਺͚ͩిࢠɾਖ਼޸ର͕ੜ੒͞ΕΔ͔ͱ͍͏ͱɺͦ͏Ͱ͸ͳ͍ɻೖࣹ X ઢʹΑΓ

10

ୈ2ষ

X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬෇༩͞ΕͨΤωϧΪʔͷҰ෦͸֨ࢠৼಈʹ࢖ΘΕΔͨΊɺ̍૊ͷిࢠɾਖ਼޸ରΛੜ੒͢Δ
ͨΊʹඞཁͳฏ‫཭ిۉ‬ΤωϧΪʔ w ͸όϯυΪϟοϓΤωϧΪʔΑΓେ͖͘ͳΔɻSi ʹ͓͚Δฏ‫཭ిۉ‬ΤωϧΪʔ͸ wSi = 3.65 eV Ͱ͋ΔɻΑͬͯɺΤωϧΪʔ E ͷޫࢠ͕ޫి‫ٵ‬ऩ͞Εͨ࣌ʹੜ੒͞ΕΔిࢠɾਖ਼޸ରͷ‫ ਺ݸ‬Npair ͸ɺΤεέʔϓ͕‫͜ى‬Βͳ͍৔߹ɺ࣍
ࣜͷΑ͏ʹදͤΔɻ
E
Npair =
(2.3)
w
͜ͷΑ͏ʹɺੜ੒͞ΕΔిࢠɾਖ਼޸ରͷ‫਺ݸ‬͸ೖࣹ X ઢͷΤωϧΪʔʹൺྫ͢ΔͨΊɺిՙͷ‫਺ݸ‬Λ‫ݕ‬ग़͢Δ͜ͱ͕Ͱ͖Ε͹ɺೖࣹ X ઢͷΤωϧΪʔΛ‫ੵݟ‬΋Δ͜ͱ͕Ͱ͖Δɻ
ೖࣹͨ͠ X ઢͷΤωϧΪʔΛҰҙʹܾఆ͢Δ͜ͱ͸‫ݪ‬ཧతʹͰ͖ͳ͍ɻͳͥͳΒɺੜ੒͞ΕΔిࢠɾਖ਼޸ରͷ‫͕਺ݸ‬౷‫ܭ‬తʹ༳Β͍Ͱ͠·͏͔ΒͰ͋Δɻੜ੒͞ΕΔ‫ ਺ݸ‬Npair#ͷ༳Β͗ͷඪ४ภࠩ σpair ͸ɺϙΞιϯաఔΛԾఆͨ͠৔߹ʹ༧૝͞ΕΔ஋ ( Npair ) ΑΓ΋খ͘͞ͳΔɻ͜ͷϙΞιϯ౷‫ʹܭ‬ର͢ΔͣΕΛද͢܎਺ͱͯ͠ϑΝϊҼࢠ F Λఆٛ͢Δͱɺ࣍ࣜͷΑ͏ʹදͤΔɻ
E
σ2pair = F(2.4)
WϑΝϊҼࢠͷ஋ʹ‫د‬༩͢ΔཁҼΛશͯ‫׬‬શʹઆ໌Ͱ͖ΔΑ͏ͳཧ࿦͸ະͩଘࡏ͠ͳ͍͕ɺ
࣮‫ݧ‬తʹ͸͋Δఔ౓ͷ஋·Ͱ͸ߜΓࠐΊ͍ͯΔɻSi ͷ৔߹ɺF = 0.12 ఔ౓ (e.g., [27]) Ͱ͋Δ͜ͱ͕஌ΒΕ͍ͯΔɻ˙ 2.2

൒ಋମ෺ཧͷ‫ૅج‬

2.2.1 ൒ಋମͷ‫ૅج‬‫ݻ‬ମ෺࣭͸ɺಋମɺ൒ಋମɺઈԑମͷ 3 ͭʹେผ͞ΕΔɻ൒ಋମ͸ɺಋମͱઈԑମͷதؒͷి‫఻ؾ‬ಋ౓Λ΋ͭ෺࣭Λࢦ͠ɺͦͷి‫఻ؾ‬ಋ౓͸Թ౓ɺޫɺ࣓քɺෆ७෺ʹରͯ͠ඇৗʹහ‫͋Ͱײ‬Δɻ͜ͷଟ༷ͳి‫ؾ‬ಛੑΛ‫Ͱͱ͔͜͢׆‬ɺ൒ಋମ͸ۙ೥ͷΤϨΫτϩχΫε
ͷൃలʹ͓͍ͯॏཁͳ໾ׂΛՌ͖ͨͯͨ͠ɻ
ඍྔͷෆ७෺Λυʔϓͨ͠൒ಋମ͸ɺ൒ಋମ‫ݕ‬ग़‫ػͯ͠ͱث‬ೳͤ͞Δ্Ͱͷ‫ج‬ຊͱͳ
ΔɻSi Λ͸͡Ίͱ͢Δ 4 Ձͷ݁থΛߟ͑Δͱɺෆ७෺ΛఴՃ͍ͯ͠ͳ͍΋ͷ͸ਅੑ൒ಋମͱΑ͹ΕΔͷʹର͠ɺϦϯ (P) ͳͲͷ 5 Ձͷ‫ݩ‬ૉΛఴՃͨ͠΋ͷ͸ n ‫ܕ‬൒ಋମɺϗ΢ૉ(B) ͳͲͷ 3 Ձͷ‫ݩ‬ૉΛఴՃͨ͠΋ͷ͸ p ‫ܕ‬൒ಋମͱΑ͹ΕΔɻn ‫ܕ‬൒ಋମͰ͸ɺෆ७෺‫ݩ‬ૉͷ 5 ‫ݸ‬ͷՁిࢠͷ͏ͪ 4 ‫ݸ‬͸ Si ‫ڞͱࢠݪ‬༗݁߹Λ‫ܗ‬੒͢Δ͕ɺ༨ͬͨ 1 ‫ݸ‬͸ࣗ༝ిࢠͷΑ͏ͳৼΔ෣͍Λ͢ΔɻҰํͰɺp ‫ܕ‬൒ಋମͰ͸‫ڞ‬༗݁߹ʹ࢖ΘΕΔిࢠ͕̍ͭ଍Γ
ͳ͘ͳΔɻిࢠ͕଍Γͳ͍৔ॴ͸ɺ૬ରతʹਖ਼ͷిՙΛ͍࣋ͬͯΔΑ͏ʹ‫͑ݟ‬ΔͨΊɺਖ਼޸ (΋͘͠͸ϗʔϧ) ͱΑͿɻ͜͜ͰɺΩϟϦΞΛ൒ಋମʹ͓͚Δిྲྀͷ୲͍खͱఆٛ͢
Δͱɺn ‫ܕ‬൒ಋମͷओཁͳΩϟϦΞ͸ిࢠɺp ‫ܕ‬൒ಋମͷओཁͳΩϟϦΞ͸ϗʔϧͱͳΔɻ

2.2. ൒ಋମ෺ཧͷ‫ૅج‬

11

2.2.2 ΩϟϦΞີ౓൒ಋମதͷΩϟϦΞີ౓͸ɺ఻ಋಛੑ΍ΩϟϦΞͷੜ੒ɾ࠶݁߹ɺ͓ΑͼޫʹΑΔԠ౴ΛܾΊΔཁૉͷҰͭͰ͋Γɺ൒ಋମσόΠεʹ͓͚ΔඇৗʹॏཁͳύϥϝʔλͰ͋Δɻ·ͣɺਅੑ൒ಋମͷΩϟϦΞີ౓ʹ͍ͭͯߟ͑Δɻ೤ฏߧঢ়ଶɺͭ·Γ֎෦͔Βͷޫೖࣹ΍ి৔ͳͲ͕ͳ͍ఆৗঢ়ଶΛԾఆ͢Δͱɺ఻ಋଳதͷిࢠີ౓ n ͱՁిࢠଳதͷϗʔϧີ౓p ͸ɺͦΕͧΕ࣍ࣜͷΑ͏ʹදͤΔɻ
!
"EC − EFn = NC exp −
(2.5)
kB T
!
"
EF − EV
p = NV exp −
(2.6)
kB T

͜͜ͰɺNC , NV ͸ͦΕͧΕ఻ಋଳɺՁిࢠଳʹ͓͚Δ༗ޮঢ়ଶີ౓ɺEC , EV ͸ͦΕͧΕ఻ಋଳԼ୺ͷΤωϧΪʔɺՁిࢠଳ্୺ͷΤωϧΪʔɺEF ͸ϑΣϧϛΤωϧΪʔɺkB ͸ϘϧπϚϯఆ਺ɺT ͸ઈରԹ౓Ͱ͋Δɻਅੑ൒ಋମͰ͸ɺ఻ಋଳதͷిࢠີ౓ͱՁిࢠଳ
தͷϗʔϧີ౓͸౳͍͠ɺ͢ͳΘͪɺni ≡ n = p ͕੒Γཱͭɻ͕ͨͬͯ͠ɺҎԼͷ 2 ͕ࣜ੒ཱ͢Δɻ
pn = n2i
(2.7)
!
"
#
Eg
ni = NC NV exp −
(2.8)
kB T

͜͜ͰɺEg = EC − EV Ͱ͋Δɻଓ͍ͯɺn ‫ܕ‬ɺp ‫ܕ‬൒ಋମͷΩϟϦΞີ౓ʹ͍ͭͯߟ͑Δɻਅੑ൒ಋମͱ͸ҟͳΓɺෆ७෺͕ఴՃ͞ΕΔͨΊɺϑΣϧϛ४Ґ͕มԽ͢Δɻυφʔೱ౓͕ߴ͍ n ‫ܕ‬൒ಋମͰ͸ɺిࢠ਺͕ଟ͘ͳΔͨΊɺϑΣϧϛ४Ґ͸఻ಋଳͷԼ୺ʹۙͮ͘ɻҰํͰɺΞΫηϓλೱ౓͕ߴ͍ p ‫ܕ‬൒ಋମͰ͸ɺϗʔϧ਺͕ଟ͘ͳΔͨΊɺϑΣϧϛ४Ґ͸఻ಋଳͷ্୺ʹۙͮ͘ɻ͕ͨͬͯ͠ɺΤωϧΪʔόϯυਤ 2.2 ͷΑ͏ʹͳΔɻn ‫ܕ‬ɺp ‫ܕ‬൒ಋମͷΩϟϦΞີ౓͸ɺϑΣϧϛ४Ґ͕ҟͳΔ͜ͱʹ஫ҙ͢Ε͹ɺࣜ 2.5, 2.6 ͱಉ͡‫Ͱܗ‬දͤΔɻn ‫ܕ‬ɺp ‫ܕ‬൒ಋମͷΩϟϦΞີ౓ (ࣜ 2.5, 2.6) ͸ɺਅੑ൒ಋମͷΩϟϦΞີ౓ (ਅੑΩϟϦΞີ౓: ni ) ͱਅੑ൒ಋମͷϑΣϧϛ४Ґ (ਅੑϑΣϧϛ४Ґ: Ei = (EC − EV )/2) Λ༻͍ͯ࣍ࣜͷΑ͏ʹॻ͖‫͑׵‬Δͱ‫ݟ‬௨͕͠Α͘ͳΔɻ
!
"EF − Ein = ni exp
(2.9)
kB T
!
"
EF − Eip = ni exp −(2.10)kB T
͜ͷ 2 ͔ࣜΒɺਅੑ൒ಋମ͚ͩͰͳ͘ɺn ‫ܕ‬ɺp ‫ܕ‬൒ಋମʹ͓͍ͯ΋ pn = n2i ͕੒Γཱͭ͜ͱ͕Θ͔Δɻ͜Ε͸࣭ྔ࡞༻ଇͱΑ͹Ε͓ͯΓɺ೤ฏߧঢ়ଶͷ൒ಋମʹ͓͍ͯҰൠʹ੒Γ
ཱͭɻ

12

ୈ2ষ

伝導帯

EC

p 型半導体真性半導体

nie- e- e- e-

X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬n 型半導体n < nie- e-

e- e- e- e- e- e- e- e- n > ni
EF > Ei

真性半導体のE
フェルミ準位 i

EF = Ei
EF < EiEVnih h h h

価電子帯

h h h h h h h h p > ni

p < nih h

ਤ 2.2: ਅੑ൒ಋମɺn ‫ܕ‬ɺp ‫ܕ‬൒ಋମͷΤωϧΪʔόϯυਤɻ

2.2.3 pn ઀߹
p ‫ܕ‬൒ಋମͱ n ‫ܕ‬൒ಋମΛ઀ଓͨ͠΋ͷΛߟ͑Δɻp-n ઀߹ʹ͓͚ΔɺΩϟϦΞͷ෼෍ͷ֓೦ਤ 2.3 Λࣔ͢ɻp ‫ྖܕ‬ҬͰ͸ϗʔϧೱ౓͕ɺn ‫ྖܕ‬ҬͰ͸ిࢠೱ౓͕ߴ͍ͨΊɺ઀߹໘Ͱ͸֤ʑͷΩϟϦΞ͕ೱ౓͕௿͍ํ΁֦ࢄ͢Δɻ֦ࢄ͞ΕͨΩϟϦΞ͸࠶݁߹͢ΔҰํͰɺp ‫ྖܕ‬ҬͰ͸݁থ֨ࢠʹ‫ݻ‬ఆ͞ΕͨෛͷΞΫηϓλΠΦϯɺಉ༷ʹ n ‫ྖܕ‬ҬͰ͸ਖ਼ͷυφʔΠΦϯ͕औΓ࢒͞ΕΔɻͦͷ݁Ռɺp ‫ྖܕ‬Ҭ͸ෛʹɺn ‫ྖܕ‬Ҭ͸ਖ਼ʹଳి͠ɺ઀
߹໘ۙ๣ʹిҐޯ഑͕ੜ͡Δɻ͜ͷిҐޯ഑ʹΑΓɺ֦ࢄిྲྀͱ͸‫޲ํٯ‬ͷυϦϑτిྲྀ͕ൃੜ͠ɺ࠷ऴతʹ͜ͷೋͭͷిྲྀ͕ͭΓ߹ͬͨฏߧঢ়ଶʹୡ͢Δɻ͜ͷͱ͖ɺ઀߹໘෇
ۙʹ͓͍ͯɺΩϟϦΞ͕΄΅ଘࡏ͠ͳ͍ͱΈͳͤΔྖҬΛۭ๡૚ɺ઀߹໘ʹੜͨ͡ిҐࠩΛϏϧτΠϯϙςϯγϟϧ (Si Ͱ͸ φi ∼ 0.6 V) ͱΑͿɻ͜͜ͰɺిҐޯ഑ͷͳ͍தੑྖҬ͸અ 2.2.2 ͷΑ͏ͳ೤ฏߧঢ়ଶͰ͋Δͷʹର͠ɺۭ๡૚Ͱ͸ిҐޯ഑͕͋ΔͨΊඇ೤ฏߧঢ়ଶʹ͋Δɻ͕ͨͬͯ͠ɺΩϟϦΞີ౓ͷࣜ 2.9, 2.9 ͸ۭ๡૚Ͱ͸੒ཱ͠ͳ͍ɻ
(ホール)

(ホール)

拡散

拡散

h

e-

h
h

h
h

h

h
p 型半導体

h

ee-

ee-

ee-

h
h

h
h

e-

n 型半導体

h

h

e-

h

h
h

e-

e-

h
中性領域

h

ドリフト

− +

e-

− +

e-

− +
空乏層

ee-

e-

eee中性領域

ਤ 2.3: p-n ઀߹ͷ֓೦ਤɻਤதͷʮ−ʯ͸݁থ֨ࢠʹऔΓ࢒͞ΕͨෛͷΞΫηϓλΠΦϯɺʮ+ʯ͸ਖ਼ͷυφʔΠΦϯΛද͢ɻۭ๡૚ްۭ๡૚Ͱిՙ͕ൃੜ͢Δͱɺۭ๡૚಺ʹଘࡏ͢ΔిҐޯ഑ʹΑΓυϦϑτ͢ΔɻͦͷిՙΛ༨͢͜ͱͳ͘ऩूͰ͖Ε͹ɺిՙྔ͔Βೖࣹͨ͠ X ઢͷΤωϧΪʔΛ‫ੵݟ‬΋ΕΔɻઅ
2.1.2 Ͱड़΂ͨΑ͏ʹɺX ઢ͸ΤωϧΪʔʹΑΓ‫ٵ‬ऩҐஔ͕ҟͳΓɺߴΤωϧΪʔ΄Ͳਂ

2.2. ൒ಋମ෺ཧͷ‫ૅج‬13͍ҐஔͰ‫ٵ‬ऩ͞Ε΍͘͢ͳΔɻ͕ͨͬͯ͠ɺ޿ଳҬͷ X ઢΛ‫ݕ‬ग़͢ΔͨΊʹ͸ɺۭ๡૚Λ
ް͘͢Δඞཁ͕͋Δɻް͍ۭ๡૚͸ɺn ‫ܕ‬ଆͷిҐ͕ߴ͘ͳΔΑ͏ʹ֎෦͔Βిѹ (όοΫόΠΞεిѹ VBB ) ΛՃ͑Δ͜ͱͰ࣮‫͖Ͱݱ‬Δ (ਤ 2.4) ͨΊɺҰൠతͳ X ઢ༻൒ಋମ‫ݕ‬ग़‫Ͱث‬͸όοΫόΠΞεిѹΛҹՃͯ͠ಈ࡞͍ͤͯ͞Δɻ
h
h
h

e-

−

−

−

+

+

+

−

−

−

+

+

+

e-

−

−

−

+

+

+

e-

空乏層

VBB

ਤ 2.4: όοΫόΠΞεిѹΛҹՃͨ͠ͱ͖ͷ p-n ઀߹ͷ֓೦ਤɻۭ๡૚ͷްΈ͸‫ʹࢉܭ‬ΑΓ‫ٻ‬ΊΔ͜ͱ͕Ͱ͖Δɻ͜͜Ͱ͸؆୯ͷͨΊɺۭ๡૚಺ͷΩϟϦΞີ౓͸ 0 Ͱ͋Δͱ͠ɺۭ๡૚ͱதੑྖҬͷ‫ڥ‬քͰ͸ΩϟϦΞີ౓͕֊ஈؔ਺తʹ 0 ͔ΒΞΫηϓλೱ౓ NA (΋͘͠͸υφʔೱ౓ ND ) ʹมԽ͍ͯ͠Δ΋ͷͱ͢Δɻp ‫ܕ‬ɺn ‫ྖܕ‬Ҭͷۭ๡૚ްΛͦΕͧΕ xp , xn ͱ͢Δͱɺ࣍ࣜͷΑ͏ʹදͤΔɻ

xp =

$

2εSi (VBB + φi ),qNA (1 + NA /ND )Wdep = xp + xn =

$

xn =

$

2εSi (VBB + φi )qND (1 + ND /NA )!
"2εSi 1
1+(VBB + φi )q NA ND(2.11)(2.12)

͜͜ͰɺWdep ͸શۭ๡૚ްɺεSi = 1.04 × 10−12 F/cm ͸ Si ͷ༠ి཰ɺq = 1.6 × 10−19 C ͸ి‫ؾ‬ૉྔͰ͋Δɻ
ΞΫηϓλೱ౓ͱυφʔೱ౓ͷෆ७෺ೱ౓͕ܻͰҟͳΔ৔߹͸ɺࣜ 2.11 ΑΓೱ౓ͷ௿͍ྖҬʹۭ๡૚͕޿͕Δɻ͜ͷ৔߹ɺ௿ೱ౓ଆ͸ X ઢʹ‫౓ײ‬Λ΋ۭͭ๡ྖҬͱͯ͠༻͍ɺߴ
ೱ౓ଆ͸ిՙ‫ݕ‬ग़Λߦ͏ి‫( ۃ‬ηϯεϊʔυ) ͱͯ͠༻͍Δɻྫ͑͹ɺNA ≪ ND ͱ͢Δͱɺ
$2εSi (VBB + φi )Wdep ∼ xp ∼(2.13)
qNAͱۙࣅͰ͖Δɻ͞Βʹɺϗʔϧͷқಈ౓ µh ∼ 5 × 102 cm2 · V−1 · s−1 ɺp ‫ܕ‬൒ಋମͷൺ఍߅ρp = (qµh NA )−1 Λ༻͍ͯࣜ 2.13 Λॻ͖௚͢ͱɺ

Wdep ∼%
2εSi µh ρp (VBB + φi )(2.14)

ͱͳΓɺۭ๡૚ͷްΈ͕௿ೱ౓ଆͷൺ఍߅ͷฏํࠜͱόοΫόΠΞεిѹͷฏํࠜʹൺྫ
͢Δ͜ͱ͕Θ͔Δɻ

14

˙ 2.3

ୈ2ষ

X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬

MOSFET

MOSFET (Metal-Oxide-Semiconductor Field Fﬀect Transistor) ͸ɺۚଐ (Metal)ɺࢎԽ෺
(Oxide)ɺ൒ಋମ (Semiconductor) ͷࡾ૚Ͱߏ੒͞ΕΔ MOS ߏ଄Λ΋ͪɺήʔτి‫ʹۃ‬ҹՃ͢ΔిѹʹΑΓιʔεɾυϨΠϯి‫ؒۃ‬ͷిྲྀΛ੍‫͢ޚ‬ΔిքޮՌτϥϯδελͷҰछ
Ͱ͋Δɻਤ 2.5 ʹ MOSFET ͷ໛ࣜਤΛࣔ͢ɻMOSFET ͸ɺిྲྀͷ୲͍खͱͳΔΩϟϦΞ
ͷҧ͍ʹΑΓɺNMOS (N-channel MOS)ɺPMOS (P-channel MOS) ʹ෼ྨ͞ΕΔɻ
MOSFET ʹ͓͍ͯॏཁͳಛੑͷҰͭʹɺεΠονϯάಛੑ͕͋Δɻ͜ͷεΠονϯά
ಛੑΛܾΊΔͷ͸ɺήʔτి‫ʹۃ‬ҹՃ͢Δిѹʹର͢ΔήʔτࢎԽບ௚ԼͷΩϟϦΞͷଘ
ࡏͰ͋Δɻྫ͑͹ NMOS Λߟ͑Δͱɺήʔτʹਖ਼ͷిѹΛҹՃ͢Δͱ p ‫جܕ‬൘ͷΩϟϦΞ (ϗʔϧ) ͕ήʔτࢎԽບ௚Լ͔Βಀ͛ग़͠ɺۭ๡૚͕‫ܗ‬੒͞ΕΔɻ͜ͷҹՃిѹʹ͓͍ͯ͸ιʔεɾυϨΠϯؒΛྲྀΕΔిྲྀ͸ඍऑͰ͋Δ͜ͱ͔Βɺऑ൓సྖҬ (αϒεϨο
γϣϧυྖҬ: Subthreshold Region) ͱΑ͹ΕΔɻҰํͰɺήʔτʹ͞Βʹେ͖ͳਖ਼ͷిѹΛҹՃ͢ΔͱɺήʔτࢎԽບ௚Լʹిࢠ͕ू·Γɺ൓స૚ (νϟωϧ) Λ‫ܗ‬੒͢ΔɻνϟωϧͰ͸Ұ‫ ݟ‬n ‫ܕ‬൒ಋମͷΑ͏ʹৼΔ෣͏ͨΊɺιʔεɾυϨΠϯؒʹిྲྀ͕ྲྀΕΔɻ͜ͷిྲྀ͸ɺιʔεɾυϨΠϯؒͷిѹʹൺྫɺ΋͘͠͸ిྲྀ஋͕๞࿨͍ͯ͠Δ͜ͱ͔ΒɺͦΕͧΕઢ‫ྖܗ‬Ҭɺ๞࿨ྖҬͱ‫ݺ‬͹ΕΔɻ๞࿨ྖҬΛ ONɺऑ൓సྖҬΛ OFF ͱ͢Δ͜ͱͰɺMOSFET ΛεΠονͱͯ͠ར༻Ͱ͖ΔɻҎԼͰ֤ྖҬʹ͓͚Δ MOSFET ͷిྲྀిѹಛੑʹ͍ͭͯड़΂Δɻ
NMOS の構造
Gate
VG

Drain
VD

Gate

NMOS

SourceVS

NMOS の回路図
Drain

Gate

n+

Oxide

n+

L

W

p-

SourcePMOS の構造

Drain

Drain
VD

Gate

Gate
VG

SourceVS

PMOS の回路図

PMOS

Gate

p+

Oxide

L

p+

W

n-

Sourceਤ 2.5: MOSFET ͷ໛ࣜਤͱճ࿏ਤɻ

2.3. MOSFET

15

線形状態

飽和状態

0 V < VDS < VGS − VT

0 V < VGS − VT < VDS

VGS > VT

VGS > VTe- e- e-

弱反転状態
VDS
VGS < VTe- e- e-ChannelChannelΔLਤ 2.6: MOSFET ͷ֤ྖҬʹ͓͚Δνϟωϧͷ‫ܗ‬੒ɻઢ‫ྖܗ‬Ҭ (0 < VDS < VGS − VTH )ήʔτʹᮢ஋ VTH Λ௒͑ΔిѹΛҹՃ͍ͯ͘͠ͱɺࢎԽບ௚Լʹνϟωϧ͕‫ܗ‬੒͞Ε
Δɻ͜ͷঢ়ଶͰυϨΠϯిѹ͕ՃΘΔͱɺνϟωϧΛ௨ͯ͡ιʔεɾυϨΠϯؒͰిྲྀ (υϨΠϯిྲྀ) ͕ྲྀΕΔɻҹՃిѹ͕খ͍࣌͞͸νϟωϧ͕఍߅ͱͯ͠ಇ͖ɺυϨΠϯిྲྀ͸υϨΠϯిѹʹൺྫ͢ΔͨΊઢ‫ྖܗ‬Ҭͱ‫ݺ‬͹ΕΔɻઢ‫ྖܗ‬Ҭʹ͓͚ΔυϨΠϯిྲྀ ID͸ɺ࣍ࣜͷΑ͏ʹදͤΔɻ
W
ID ≃ µ COX (VGS − VTH )VDS
(2.15)
L
͜͜ͰɺL ͸υϨΠϯɾιʔεؒͷνϟωϧ௕ɺW ͸Ԟߦ͖ํ޲ͷνϟωϧ෯ɺCOX ͸୯Ґ໘ੵ͋ͨΓͷήʔτࢎԽບ༰ྔɺµ ͸ΩϟϦΞͷқಈ౓Λද͢ɻID ͕ιʔεɾυϨΠϯؒͷిѹʹൺྫ͢Δ͜ͱ͔Βɺग़ྗ఍߅ (ιʔεɾυϨΠϯؒͷ఍߅)ron ͸ɺ

'−1
VDS & Wron =≃ µ COX (VGS − VTH )ID
L(2.16)

ͱදͤΔɻ·ͨɺιʔεɾυϨΠϯؒͷిѹʹରͯ͠ͲΕ͚ͩిྲྀΛग़ྗͰ͖Δ͔Λද͢ࢦඪͱͯ͠ɺग़ྗίϯμΫλϯε go Λಋೖ͢Δɻgo ͸ͦͷఆ͔ٛΒग़ྗ఍߅ͷ‫Ͱ਺ٯ‬ද͞Εɺ(∂ID ((
W
−1
((
go ≡
= ron
≃ µ COX (VGS − VTH )(2.17)∂VDS VG =const.
LͱͳΔɻ๞࿨ྖҬ (0 < VGS − VTH < VDS )ιʔεɾυϨΠϯؒిѹ VDS ͕ VGS − VTH Λ௒͑ΔͱɺήʔτɾυϨΠϯؒͷిҐ͕ࠩᮢ஋ VTH Λ௒͑ͳ͘ͳΔͨΊɺυϨΠϯଆ͔Βνϟωϧ͕ͳ͘ͳ͍ͬͯ͘ɻ͜ͷͱ͖ɺνϟωϧ୺ͱυϨΠϯؒͷ‫཭ڑ‬͸୹͘ɺిҐࠩ΋େ͖͍ͨΊɺมΘΒͣυϨΠϯిྲྀ͸ྲྀΕ
Δɻͦͷిྲྀ஋͸ VDS ʹґΒͣ΄΅Ұఆ஋ΛͱΔͨΊɺ๞࿨ྖҬͱΑ͹ΕΔɻ๞࿨ঢ়ଶʹ͓͚ΔυϨΠϯిྲྀ͸ɺ࣍ࣜͷΑ͏ʹදͤΔɻ

1W
ID = µCOX (VGS − VTH )2
2 L − ∆L

(2.18)

16

ୈ2ষ

X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬͜͜Ͱɺ࣮ޮతͳνϟωϧ௕ L −∆L ʹ͍ͭͯɺνϟωϧ௕ͷมԽ͕े෼খ͍͞ (∆L/L ≪ 1)ͱͯ͠ɺࣜ 2.18 ΛҰ࣍ۙࣅ͢ΔͱɺID ≈ µW
COX (VGS − VTH )2 (1 + λVDS )2L(2.19)

ͱͳΔɻ͜͜Ͱɺλ ͸νϟωϧ௕มௐ܎਺ͱ‫ݺ‬͹ΕɺλVDS = ∆L/L ͕੒Γཱͭɻνϟωϧ௕͕े෼௕͍ͱ͖͸มௐͷޮՌ͸ແࢹͰ͖ɺࣜ 2.19 ͸ɺ

ID ≈ µW
COX (VGS − VTH )22L(2.20)

ͱۙࣅͰ͖ɺID ͕ VDS ʹґଘ͠ͳ͍͜ͱ͕Θ͔Δɻήʔτͷೖྗిѹʹରͯ͠ͲΕ͚ͩग़ྗిྲྀΛ‫ۦ‬ಈͰ͖Δ͔Λද͢ࢦඪͱͯ͠ɺ૬‫ޓ‬ίϯμΫλϯε gm Λಋೖ͢Δɻ๞࿨ྖҬʹ͓͚Δ૬‫ޓ‬ίϯμΫλϯε͸࣍ࣜͷΑ͏ʹදͤΔɻ
(∂ID ((W((
gm ≡≃ µ COX (VGS − VTH )(2.21)∂VGS VD =const.
L

gm ͸ɺMOSFET ͷ “‫”౓ײ‬Λද͓ͯ͠Γɺgm ͕ߴ͍΄Ͳɺখ͞ͳήʔτిѹͷมԽʹରͯ͠େ͖ͳిྲྀͷมԽΛಘΔ͜ͱ͕Ͱ͖Δɻ·ͨɺ๞࿨ྖҬʹ͓͚Δग़ྗίϯμΫλϯε
͸ɺࣜ 2.19, 2.20 Λ༻͍ͯɺ࣍ࣜͷΑ͏ʹදͤΔɻ
go ≈ λµn

W
COX (VGS − VTH )2 ≈ λID
L(2.22)

๞࿨ྖҬͰ͸ɺVDS ʹରͯ͠υϨΠϯిྲྀ͸΄ͱΜͲมԽ͠ͳ͍ͨΊɺgo ≪ gm Ͱ͋Δɻऑ൓సྖҬ (VGS < VTH )VGS ͕ VTH Λ௒͑ͳ͍ͱ͖ɺνϟωϧ͕‫ܗ‬੒͞Εͳ͍ͨΊɺཧ૝తʹ͸υϨΠϯిྲྀ͸ྲྀΕͳ͍ɻ࣮ࡍʹ͸ ID = 0 ʹ͸ͳΒͣɺVGS ͷ‫ݮ‬গͱͱ΋ʹࢦ਺ؔ਺తʹ‫ݮ‬গ͢ΔৼΔ෣
͍ΛΈͤΔɻ͜ΕΛαϒεϨογϣʔϧυϦʔΫ (Subthreshold Leakage) ͱΑͼɺ͓͓Αͦͷ஋͸࣍ࣜͷΑ͏ʹදͤΔɻ
!
"VGSID ≃ I0 exp(2.23)
kB T/q͜͜ͰɺI0 ͸ VGS = VTH ͷͱ͖ͷυϨΠϯిྲྀͰ͋ΔɻαϒεϨογϣʔϧυϦʔΫ͸ɺ
MOSFET ͕ OFF ʹ͍ͯ͠Δͱ͖ʹྲྀΕͯ͠·͏ϦʔΫిྲྀͰ͋ΔͨΊɺ‫ج‬ຊతʹখ͍͞
ํ͕๬·͍͠ɻ
Ҏ্ͷ MOSFET ͷిྲྀిѹಛੑʹ͍ͭͯɺਤ 2.7 ʹ·ͱΊΔɻ˙ 2.4

CMOS Ξφϩάճ࿏ͷ‫ૅج‬

CMOS (Complementary MOS) ճ࿏ͱ͸ɺͦͷ໊ͷ௨Γ NMOS ͱ PMOS Λ “૬ิతʹ”༻͍ͨճ࿏Ͱ͋Δɻඍࡉͳ MOSFET Λ༻͍Δ͜ͱͰɺµm × µm Φʔμʔͷඇৗʹখ͍͞

2.4. CMOS Ξφϩάճ࿏ͷ‫ૅج‬

17

(a)

(b)

VDS

ID
飽和領域

−

S

=

VGS2

VG

VGS1
線形領域

VTH

VGS

VGS3 − VTH

S

飽和領域

VGS2 − VTH

VD

線形領域

H

VT

VGS1 − VTH

弱反転
領域

VGS3

VDS

ਤ 2.7: MOSFET ͷ (a)3 ঢ়ଶͷରԠؔ܎ͱ (b) ిྲྀిѹಛੑɻྖҬʹ͓͍ͯ΋ෳࡶͳճ࿏Λ౥ࡌ͢Δ͜ͱΛՄೳʹͨ͠ɻ‫༷ࡏݱ‬ʑͳ CMOS ճ࿏͕༻͍
ΒΕ͍ͯΔ͕ɺͦͷதͰ΋ಛʹ‫ج‬ຊతͳιʔε઀஍૿෯ճ࿏ͱυϨΠϯ઀஍૿෯ճ࿏ʹ͍ͭͯ঺հ͢Δɻ

2.4.1 ιʔε઀஍૿෯ճ࿏

(a)
VCS

(b)

VDD
Source
PMOS
Drain

go_p

Vin

vin

Drain

vout

P

Vout

gm_n

NMOS
Sourcego_n

ਤ 2.8: ιʔε઀஍૿෯ճ࿏ͷ (a) ճ࿏ਤͱ (b) খ৴߸౳Ձճ࿏ɻ
ιʔε઀஍ճ࿏͸ɺMOSFET Λ༻͍ͨ࠷΋‫ج‬ຊతͳ૿෯ճ࿏Ͱ͋Δɻਤ 2.8(a) ʹιʔε઀஍૿෯ճ࿏ͷྫΛࣔ͢ɻ໊শͷ௨Γ MOSFET ͷιʔεΛ઀஍͓ͯ͠ΓɺMOSFET ͸͍ͣΕ΋๞࿨ྖҬͰಈ࡞ͤ͞Δɻ͜ͷΑ͏ͳ CMOS ճ࿏ʹ͍ͭͯߟ͑Δࡍʹศརͳখ৴߸౳Ձճ࿏Λಋೖ͢Δɻখ৴߸౳Ձճ࿏ͱ͸ɺೖྗ৴߸ͷৼ෯͕খ͍͞৔߹ɺಉ͡ಈ࡞Λ͢Δ؆୯ͳճ࿏ʹஔ͖‫ͨ͑׵‬΋ͷͰ͋Δɻਤ 2.8(a) ͷιʔε઀஍૿෯ճ࿏ͷখ৴߸౳Ձճ࿏Λਤ 2.8(b) ʹࣔ͢ɻೖྗ৴߸
ͷมԽ vin ͱग़ྗిҐͷมԽ vout ͷؔ܎Λௐ΂Δɻ఺ P ʹ͓͚ΔΩϧώϗοϑͷ๏ଇΑΓɺ− gm n vin − (go n + go p )vout = 0(2.24)

18

ୈ2ষ

X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬

ͱ͔͚Δɻ͜͜Ͱɺgm n ͸ NMOS ͷ૬‫ޓ‬ίϯμΫλϯεɺgo n , go p ͸ͦΕͧΕ NMOS ͱPMOS ͷग़ྗίϯμΫλϯεͰ͋Δɻࣜ 2.24 Λ vout ʹ͍ͭͯղ͘ͱɺ

vout = −gm nvin ≡ −gm n reﬀ vin
go n + go p

(2.25)

ͱͳΔɻ͜͜Ͱɺreﬀ = (go n + go p )−1 ͸࣮ޮతͳग़ྗ఍߅Ͱ͋ΔɻΑͬͯɺιʔε઀஍૿෯ճ࿏ͷిѹརಘ ACS ͸ɺ࣍ࣜͷΑ͏ʹදͤΔɻ

− ACS =vout
= −gm n reﬀ
vin(2.26)

ిѹརಘͷූ߸͔Βɺ൓స૿෯͞ΕΔ͜ͱ͕Θ͔Δɻ͜ͷճ࿏ͷ࠷େͷಛ௃͸ɺେ͖ͳిѹརಘͱརಘͷඇઢ‫ܗ‬ੑͰ͋ΔɻҰൠʹ ACS ͸ඇৗʹେ͖͍ͨΊɺখ৴߸ʹରͯ͠େ͖ͳిѹརಘͰ൓స૿෯ͤͨ͞ग़ྗ৴߸ΛಘΔ͜ͱ͕Ͱ͖ΔɻҰํͰɺACS ∝ gm n ∝ VGS − VTH ΑΓɺೖྗ৴߸͕େ͖͚Ε͹͜ͷճ࿏ͷిѹརಘ΋มԽͯ͠͠·͏ɻ͜ͷग़ྗిѹͱೖྗిѹͷඇઢ‫܎ؔͳܗ‬ͷͨΊɺ͜ͷճ࿏Λͦͷ··൒ಋମ‫ݕ‬ग़‫ث‬ͷಡΈग़͠ճ࿏ʹ࠾༻͢Δͷ͸ෆదͰ͋Δɻճ࿏ͷ޻෉ʹΑΓιʔε઀஍૿෯ճ࿏ʹ͓͚Δઢ‫ܗ‬ԽΛ࣮‫͢ݱ‬ΔʮCSA ճ࿏ʯʹ͍ͭͯ͸અ 3.2.1 Ͱ঺հ͢Δɻ

2.4.2 υϨΠϯ઀஍૿෯ճ࿏ (ιʔεϑΥϩΞճ࿏)

(a)
VSF

(b)

VDD
Source
PMOS2
Drain

go2

Vin

Source
PMOS1
Drain

vout

P

Vout

gm1

go1

vin

ਤ 2.9: ιʔεϑΥϩΞճ࿏ͷ (a) ճ࿏ਤͱ (b) খ৴߸౳Ձճ࿏ɻ
ιʔεϑΥϩΞճ࿏ͱ͸ɺήʔτʹೖྗͨ͠ిѹʹ௥ਵͯ͠ɺͦͷ··ιʔε͔Βग़ྗ͢Δճ࿏Ͱ͋ΔɻೖྗΠϯϐʔμϯε͕ඇৗʹߴ͘ɺग़ྗΠϯϐʔμϯε͕௿͍ͨΊɺόοϑΝճ࿏ͱͯ͠༻͍ΒΕΔɻಛʹɺCMOS Πϝʔδηϯαͷըૉຖʹ౥ࡌ͢Δ૿෯
‫͍༻ͯ͠ͱث‬ΒΕΔ͜ͱ͕ଟ͍ɻ
ਤ 2.9(a) ʹ PMOS Λ༻͍ͨιʔεϑΥϩΞճ࿏Λɺਤ 2.9(b) ʹͦͷখ৴߸౳Ձճ࿏Λࣔ
͢ɻ఺ P ʹ͓͚ΔΩϧώϗοϑͷ๏ଇΑΓɺ

gm1 (vin − vout ) − (go1 + go2 )vout = 0(2.27)

2.5. X ઢ CMOS Πϝʔδηϯαͷ‫ج‬ຊతͳੑೳࢦඪ

19

ͱ͔͚Δɻ͜͜Ͱɺgm1 ͸ PMOS1 ͷ૬‫ޓ‬ίϯμΫλϯεɺgo1 , go2 ͸ͦΕͧΕ PMOS1,
PMOS2 ͷग़ྗίϯμΫλϯεͰ͋Δɻࣜ 2.27 Λ vout ʹ͍ͭͯղ͘ͱɺ
gm1
vout =
vin(2.28)
gm1 + go1 + go2
ͱͳΔɻιʔεϑΥϩΞճ࿏ͷిѹརಘ ASF ͸ɺ࣍ࣜͷΑ͏ʹදͤΔɻ
vout
gm1
ASF =
=
vin
gm1 + go1 + go2(2.29)

ࣜ 2.29 Λ༻͍ͯɺυϨΠϯ઀஍૿෯ճ࿏ͷೖग़ྗಛੑʹ͍ͭͯ֬ೝ͢Δɻೖྗిѹ Vin
͕ PMOS1 ͷᮢ஋ిѹ VTH ΑΓ΋খ͍͞ͱ͖ɺPMOS1 ͸ऑ൓సྖҬͰಈ࡞͢Δɻऑ൓సྖҬͰ͸ɺPMOS1 ͷυϨΠϯɾιʔεؒͷిྲྀ͸΄΅ 0 Ͱ͋Γɺιʔε΋઀஍͍ͯ͠Δ
ͱΈͳͤΔɻ͜Ε͸ࣜ 2.29 Ͱ΋֬ೝͰ͖ɺgm1 = 0ɺͭ·ΓɺASF = 0 ͱͳΔͨΊɺιʔεͷग़ྗిѹ͸ Vout = 0 ͷ··Ͱ͋ΔɻҰํͰɺVin ͕ VTH Λ௒͑ΔͱɺPMOS1 ͸๞࿨ྖҬͰಈ࡞͢Δɻ͜ͷͱ͖ɺgm1 ≫ (go1 + go2 ) ͕੒ΓཱͭͨΊɺASF ∼ 1 ͱͳΔɻҎ্ΑΓɺೖग़ྗಛੑ͸ਤ 2.10 ͷΑ͏ʹͳΔɻ͜ͷΑ͏ʹɺ๞࿨ྖҬͰಈ࡞ͤ͞Δͱɺιʔεͷग़ྗిҐ͕ೖྗిѹʹ௥ਵ͢Δ͜ͱ͕Θ͔Δɻ

VoutdVout ~ 1
dVin

VTH

Vin

ਤ 2.10: ιʔεϑΥϩΞճ࿏ͷೖग़ྗಛੑɻ

˙ 2.5

X ઢ CMOS Πϝʔδηϯαͷ‫ج‬ຊతͳੑೳ
ࢦඪX ઢΠϝʔδηϯαʔͷੑೳࢦඪͱͯ͠ɺม‫׵‬ήΠϯɺΤωϧΪʔ෼ղೳɺಡΈग़͠ϊΠζɺ҉ిྲྀɺ‫ݕ‬ग़ޮ཰͕‫͛ڍ‬ΒΕΔɻ͜ΕΒ͸‫ݕ‬ग़ͨ͠ X ઢͷϓϩϑΝΠϧͷܾఆਫ਼౓ʹӨ‫͢ڹ‬ΔͨΊɺ‫ݕ‬ग़‫ث‬։ൃɾධՁʹ͓͍ͯॏཁͳύϥϝʔλͰ͋ΔɻຊઅͰ͸্ʹ‫ڍ‬͛ͨͦΕͧΕͷੑೳࢦඪʹ͍ͭͯ঺հ͢Δɻ

20

ୈ2ষ

X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬

2.5.1 ม‫׵‬ήΠϯม‫׵‬ήΠϯͱ͸ɺऩू͞Εͨ৴߸ిՙ 1 ‫ͨ͋ݸ‬ΓԿ V ͷిѹʹม‫͞׵‬Ε͔ͨΛࣔ͢஋
Ͱ͋Δɻऩू͞Εͨ৴߸ిՙ NSIG ‫ʹݸ‬ର͠ɺಘΒΕͨిѹརಘΛ Vout ͱ͢Δͱɺม‫׵‬ήΠϯ G ͸ɺ
Vout
G=(2.30)NSIG
ͱॻ͚Δɻ

2.5.2 ΤωϧΪʔ෼ղೳઅ 2.1.3 Ͱड़΂ͨΑ͏ʹɺ൒ಋମ‫ݕ‬ग़‫Ͱث‬͸ɺޫి‫ٵ‬ऩʹΑΓੜ੒͞ΕΔ৴߸ిՙ͔ΒX ઢͷΤωϧΪʔΛଌఆ͢ΔɻΤωϧΪʔͷܾఆਫ਼౓Λද͢ࢦඪ͸ΤωϧΪʔ෼ղೳͱ‫ݺ‬͹Εɺଌఆͨ͠ΤωϧΪʔͷ༳Β͗ͷ൒஋શ෯ (Full Width at Half Maximum: FWHM) Λ༻͍ͯද͞ΕΔɻΤωϧΪʔ෼ղೳ ∆E ͸ҎԼͷΑ͏ʹ༩͑ΒΕΔɻ
)E(2.31)∆E = 2.355w F + σ2NoisewΤωϧΪʔ෼ղೳʹ‫د‬༩͢ΔϊΠζ (σNoise ) ‫ݯ‬͸ෳ਺ଘࡏ͢Δ͕ɺҰൠʹ‫ޙ‬ड़͢ΔಡΈग़͠ϊΠζ΍҉ిྲྀϊΠζͳͲ͕ࢧ഑తͰ͋ΔɻͲΜͳʹϊΠζ௿‫ݮ‬Λߦ͓͏ͱ΋ɺࣜ 2.31 ʹ͓͍ͯ σNoise = 0 ͱͨ͠஋ΑΓ΋খ͍͞ΤωϧΪʔ෼ղೳΛୡ੒͢Δ͜ͱ͸Ͱ͖ͳ͍ɻ͜ͷཧ࿦తͳ‫ݶ‬ք஋͸ϑΝϊ‫ݶ‬քͱΑ͹Εɺྫ͑͹ Si ൒ಋମ‫ݕ‬ग़‫Ͱث‬͸ 6 keV ͷ X ઢʹର͓͓ͯ͠Αͦ 120 eV Ͱ͋ΔɻͦΕΏ͑ɺ༏ΕͨΤωϧΪʔ෼ղೳΛඞཁͱ͢Δ৔߹ɺϊΠζ௿‫ݮ‬Λࢪͯ͠ σNoise Λখ͘͢͞Δ͚ͩͰ
ͳ͘ɺ௿͍ w Λ࣋ͭ‫ݕ‬ग़‫ث‬ΛબͿ͜ͱ΋ॏཁͰ͋ΔɻҰൠʹɺΨε‫ݕ‬ग़‫ʹث‬ൺ΂ͯখ͍͞w Λ΋ͭ൒ಋମ‫ݕ‬ग़‫ث‬ͷํ͕༏ΕͨΤωϧΪʔ෼ղೳΛ࣮‫͖Ͱݱ‬Δɻ

2.5.3 ಡΈग़͠ϊΠζϊΠζ͸ɺX ઢͷΤωϧΪʔܾఆਫ਼౓Λେ͖͘ࠨӈ͢ΔॏཁͳಛੑͰ͋ΔɻX ઢͷೖࣹ͔Βɺ࠷ऴతʹ AD ม‫ͯ͠׵‬೾ߴ஋ΛσδλϧԽ͢Δ·Ͱʹɺෳ਺ͷϊΠζൃੜ‫͕ݯ‬ଘࡏ
͢Δɻͦͷ͏ͪɺಡΈग़͠ճ࿏༝དྷͷϊΠζΛ·ͱΊͯಡΈग़͠ϊΠζͱΑͿɻಡΈग़͠ճ࿏ʹ MOSFET Λ༻͍ͨ CMOS ΠϝʔδηϯαʔͰ͸ɺMOSFET Ͱൃੜ͢ΔϊΠζ͕ࢧ഑తͰ͋ΔɻҎԼʹ MOSFET ͷओͳϊΠζ‫͋Ͱݯ‬Δ೤ϊΠζɺϦηοτϊΠζ (kTC ϊΠζ)ɺ1/ f ϊΠζ (ϑϦοΧʔϊΠζ) ʹ͍ͭͯ঺հ͢Δ [22, 23]ɻ೤ϊΠζ೤ϊΠζ͸ɺ఍߅ମ಺ʹଘࡏ͢Δࣗ༝ిࢠͷෆ‫ن‬ଇͳ೤ӡಈʹ‫ى‬Ҽ͢ΔϊΠζͰ͋Δɻ
఍߅஋ R Λ΋ͭ఍߅ʹ͓͚Δ೤ϊΠζͷฏ‫ۉ‬ೋ৐ిѹ͸ɺ

v2thermal = 4kB T R∆ f = S thermal ∆ f(2.32)

2.5. X ઢ CMOS Πϝʔδηϯαͷ‫ج‬ຊతͳੑೳࢦඪ

21

ͱදͤΔɻ͜͜Ͱɺ∆ f ͸ճ࿏ͷप೾਺ଳҬ, S thermal ͸೤ϊΠζͷ୯Ґप೾਺͋ͨΓͷฏ‫ۉ‬ೋ৐ిѹͰ͋ΓɺిྗεϖΫτϧີ౓ͱ΋‫ݺ‬͹ΕΔ෺ཧྔͰ͋ΔɻS thermal ͸प೾਺ f ʹґଘ͠ͳ͍ͨΊɺ೤ϊΠζ͸ϗϫΠτϊΠζʹͳΔɻ
ଓ͚ͯɺMOSFET ͷ೤ϊΠζʹ͍ͭͯߟ͑Δɻઢ‫ྖܗ‬ҬͰ͸ιʔεɾυϨΠϯؒͷ఍߅஋ʹै͏೤ϊΠζͷࣜ 2.32 ͰදͤΔɻҰํɺ๞࿨ྖҬͰ͸ɺ೤ϊΠζͷൃੜ‫͋Ͱݯ‬Δ
νϟωϧ಺ͷΩϟϦΞີ౓෼෍͕ҰఆͰ͸ͳ͍ͨΊɺࣜ 2.32 ͱ౳ՁͰ͸ͳ͘ͳΔɻ๞࿨ྖҬʹ͓͚Δ MOSFET ͷ೤ϊΠζ͸ɺ࣍ࣜͰ༩͑ΒΕΔɻ

S thermal =4ξkB T R
gm(2.33)

͜͜Ͱɺξ ͸ա৒೤ϊΠζ܎਺ͱΑ͹ΕΔఆ਺Ͱɺνϟωϧ௕ʹґଘ͢Δɻ਺ µm ͷΦʔμʔͰ͸͓͓Αͦ ξ ∼ 2/3 Ͱ͋ΔɻϦηοτϊΠζ (kTC ϊΠζ)kTC ϊΠζ͸ɺ͋Δ఍߅஋Λ΋ͭεΠονΛհͯ͠ɺΩϟύγλʹཷ·ͬͨిՙΛϦηοτ͢Δࡍʹੜ͡ΔϊΠζͰ͋Δɻਤ 2.11(a) ͷΑ͏ͳ RC ճ࿏ (Ϧηοτճ࿏) ͰɺMOSFETΛεΠονͱͯ͠༻͍Δ৔߹Λߟ͑ΔɻMOSFET Λ ON Ͱಈ࡞ͤ͞ΔͱΩϟύγλͷ྆୺͸౳ిҐʹઃఆ͞ΕΔɻ͔͠͠ɺ఍߅Ͱൃੜ͢Δ೤ϊΠζʹΑΓ MOSFET ͷ྆୺ʹిҐ͕ࠩϥϯμϜʹੜ͡ΔɻMOSFET Λ OFF ʹͨ࣌͠ʹͦͷిҐ͕ࠩΩϟύγλʹ࢒Γɺ͜Ε͕ϊΠζ੒෼ͱͳΔɻkTC ϊΠζͷిѹදࣔΛਤ 2.11(b) ʹࣔ͢౳Ձճ࿏Λ༻͍ͯಋग़͢Δɻ఍߅Ͱൃੜ͢Δ
೤ϊΠζ͕༰ྔ C Λ΋ͭΩϟύγλͱͷ RC ճ࿏Λհͯ͠఻ୡ͞ΕΔͱ͖ɺRC ճ࿏ͷप೾਺ಛੑΛ൓өͯ͠‫ޙ‬ஈʹ఻ΘΔɻRC ճ࿏ͷप೾਺ ω ʹ͓͚Δ఻ୡؔ਺͸ɺ
HRC (iω) =1
1 + iωCR(2.34)

Ͱ͋Δɻ͜͜Ͱɺi ͸‫਺ڏ‬୯ҐͰ͋ΔɻRC ճ࿏Λ௨ͯ͠఻ΘΔ೤ϊΠζͷฏ‫ۉ‬ೋ৐ిѹ͸ɺ* ∞dω kB T
2
vRST =
4kB T R |HRC (iω)|2=(2.35)
2πC
0ͱͳΔɻࣜ 2.35 ΑΓɺ఍߅஋ʹ͸ґଘͤͣɺԹ౓ T ͱΩϟύγλͷ༰ྔ C ʹΑΓܾ·Δ͜ͱ͕Θ͔ΔɻkTC ϊΠζ͸Ωϟύγλͷ༰ྔʹ൓ൺྫ͢ΔͨΊɺkTC ϊΠζΛ཈͑ΔͨΊʹ͸Ωϟ
ύγλ༰ྔΛେ͖͘͢Δ͜ͱ͕๬·͍͠ɻ͔͠͠ɺిՙΛిѹʹม‫͢׵‬Δ࠷্ྲྀ෦Ͱ͸ɺେ͖ͳม‫׵‬ήΠϯΛಘΔͨΊʹΩϟύγλ͸খ͘͢͞ΔͨΊɺϦηοτΛߦ͏ࡍʹඇৗʹେ͖ͳ kTC ϊΠζ͕ൃੜ͢ΔɻΩϟύγλ͸খͨ͘͞͠··ɺ͜ͷ kTC ϊΠζΛ཈͑Δ
ख๏ʹ͍ͭͯ͸અ 3.2.1 Ͱ঺հ͢Δɻ

1/ f ϊΠζ (ϑϦοΧʔϊΠζ)
MOSFET Ͱ͸ɺνϟωϧΛྲྀΕΔΩϟϦΞ͕ Si/SiO2 ք໘΍ SiO2 தͷτϥοϓʹϥϯ
μϜʹั֫ɾ์ग़͞ΕΔ͜ͱͰϊΠζ͕ൃੜ͢Δ (ਤ 2.12)ɻ͜ͷϊΠζͷిྗεϖΫτ

22

ୈ2ষ

(a)

X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬(b)

MOSFET〜

R

R

vthermal

C

vRST
C

ਤ 2.11: RC ϩʔύεϑΟϧλʹ͓͚Δ೤ϊΠζɻ(a) MOSFET Λ‫ؚ‬Ή RC ճ࿏ (Ϧηοτճ࿏)ɻ(b) RC ճ࿏ͷ೤ϊΠζʹର͢Δ౳Ձճ࿏ɻ
ϧີ౓͸प೾਺ʹ൓ൺྫ͢Δ͜ͱ͕஌ΒΕ͓ͯΓɺ͜ͷ͜ͱ͔Β 1/ f ϊΠζ·ͨ͸ϑϦοΧʔϊΠζͱ‫ݺ‬͹ΕΔɻ1/ f ϊΠζʹ͓͚Δిྗີ౓εϖΫτϧͷ۩ମతͳදࣜ͸ɺ࣍ͷΑ͏ʹͳΔ [28]ɻ
KF · IDAF 1 1
Sf =[V2 /Hz](2.36)
COX L2 g2m f EF
͜͜ͰɺKF ͸ 1/ f ϊΠζ܎਺ͱ‫ݺ‬͹ΕΔ੡଄ϓϩηεʹґଘ͢ΔྔͰɺA · F ͷ࣍‫ݩ‬Λ΋
ͭɻAF ͱ EF ͸ͦΕͧΕυϨΠϯిྲྀ ID ͷ܎਺ɺप೾਺ f ͷ܎਺Ͱ͋Δɻཧ૝తͳ 1/ fϞσϧ͸ɺAF = EF = 1 ͱͳΔ [28]ɻࣜ 2.20, 2.21 Λ༻͍Δͱࣜ 2.36 ͷ ID ͱ gm Λফ‫Ͱڈ‬͖ɺ࣍ࣜͷΑ͏ʹͳΔɻ
KF
1 2
Sf =
[V /Hz](2.37)
22µCOX LW f

1/ f ϊΠζ͸ MOSFET ͷαΠζ LW ʹ൓ൺྫ͢ΔͨΊɺಡΈग़͠ճ࿏ʹ༻͍Δ MOSFETͷαΠζΛܾΊΔࡍ͸ɺ1/ f ϊΠζͷαΠζґଘੑ΋ߟྀ͢Δඞཁ͕͋Δɻ
Gate

Sourcen+p-

e-Oxide (SiO2)

Drain

Channelトラップ

Oxide (SiO2)

放出

Si 結晶
ਤ 2.12: NMOS Λྫʹͨ͠ 1/ f ϊΠζൃੜͷ֓೦ਤɻ

2.5. X ઢ CMOS Πϝʔδηϯαͷ‫ج‬ຊతͳੑೳࢦඪ

23

2.5.4 ҉ిྲྀϊΠζޫిޮՌΛར༻ͨ͠ޫ‫ݕ‬ग़‫͍͓ͯʹث‬ɺޫ͕রࣹ͞Ε͍ͯͳ͍ঢ়‫گ‬ԼͰ΋ిࢠɾਖ਼޸ର
͕ൃੜ͠ɺిྲྀ͕ྲྀΕͯ͠·͏͜ͱ͕͋ΔɻಛʹɺಡΈग़͠ϊʔυʹిՙ͕ऩू͞Εͯ
͠·͏‫ܦ‬࿏ͷ΋ͷΛ҉ిྲྀͱ‫Ϳݺ‬ɻ҉ిྲྀ༝དྷͷిՙͷൃੜ͸ϙΞιϯաఔʹै͏ͨΊɺ࿐ޫ࣌ؒதʹฏ‫ ͯ͠ۉ‬Npair ૊ͷిࢠɾਖ਼޸ର͕ൃੜ͢Δ৔߹ɺ֤࿐ޫຖͰͷిՙ਺༳Β#͗ͷඪ४ภࠩ͸ Npair ͱͳΔɻͦͷͨΊɺ҉ిྲྀ༝དྷͷిՙ਺ͷฏ‫ۉ‬஋Λࠩ͠Ҿ͍ͯ΋ɺ
#Npair ͚ͩ༳Β͕͗࢒Δɻ͜Ε͸ɺిՙͷ‫͔਺ݸ‬Βޫࢠͷ‫਺ݸ‬΋͘͠͸ΤωϧΪʔΛਪఆ͢Δޫ‫ݕ‬ग़‫ث‬ͷϊΠζཁૉͱͳΔɻຊम࢜࿦จͰ͸ɺ͜ͷ҉ిྲྀ༝དྷͷϊΠζΛʮ҉ిྲྀϊΠζʯͱ‫͢ͱͱ͜Ϳݺ‬Δɻ
SiO2
再結合中心 heSurface
Dark Current

Sense
Node(n+)p-

Depletion
Dark Current
eh

空乏層

中性領域

e-

Diffusion
Dark Currentp+

VBBਤ 2.13: ҉ిྲྀൃੜ‫ݯ‬ͷ֓೦ਤɻ҉ిྲྀ‫ݯ‬͸ෳ਺ଘࡏ͠ɺͦΕͧΕൃੜաఔɾൃੜ৔ॴ͕ҟͳΔ [29, 30]ɻҰൠʹ Si ൒ಋମޫ‫ݕ‬ग़‫ࢧͰث‬഑తͱͳΔ҉ిྲྀ͸ɺਤ 2.13 ʹࣔ͢௨Γɺ(i) Depletion Dark Currentۭ๡૚ͷόϯυΪϟοϓதʹଘࡏ͢Δ࠶݁߹த৺ (தؒ४Ґ) Λհͨ͠೤ྭ‫ى‬(ii) Surface Dark Current
Si/SiO2 ք໘ͷόϯυΪϟοϓதʹଘࡏ͢Δ࠶݁߹த৺ (தؒ४Ґ) Λհͨ͠೤ྭ‫ى‬(iii) Diﬀusion Dark CurrentதੑྖҬ͔ΒͷϚΠϊϦςΟΩϟϦΞ (೤ྭ‫ిͨ͠ى‬ՙ) ͷ֦ࢄͷ 3 छྨͰ͋Δɻ͍ͣΕ΋೤ྭ‫ͨ͏ैʹى‬Ίɺ҉ిྲྀ͸Թ౓ʹ‫͘ڧ‬ґଘ͢Δɻ
Depletion Dark Current ͱ Surface Dark Current ͸ɺిࢠɾਖ਼޸ର͕தؒ४ҐΛ‫ܦ‬༝ͯ͠࠶݁߹͢Δׂ߹ͱɺಉ͘͡‫ܦ‬༝ͯ͠ྭ‫͢ى‬Δׂ߹ͷେখͰܾ·Δɻதؒ४ҐΛ௨ա͢Δ

24

ୈ2ষ

X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬ΩϟϦΞͷਖ਼ຯͷ࠶݁߹ − ੜ੒཰ U ͸ɺ࣍ࣜͰද͞ΕΔ Shockley-Read-Hall (SRH) Ϟσϧ [31, 32] Ͱ͏·͘આ໌Ͱ͖Δɻ
+,σe σh vth Nt (Et )ni pn − n2iσvth Nt (Et )(pn − n2i )
!
".
!
". ∼
.
U(Et ) =Et − Ei
Et − Ei
Et − Ei
σe n + ni exp+ σh p + ni exp −p + n + 2ni cosh
kB T
kB T
kB T
(2.38)
͜͜Ͱɺσe , σh ͸ͦΕͧΕిࢠɺϗʔϧͷ࠶݁߹த৺ʹର͢Δั֫அ໘ੵͰ͋Γɺ؆୯ͷͨΊ σ ≡ σe = σh ΛԾఆ͍ͯ͠Δɻ·ͨɺvth ͸ΩϟϦΞͷ೤଎౓ɺNt (Et ) ͸ΤωϧΪʔ४Ґ Et ʹ͋Δ࠶݁߹த৺ͷ਺ີ౓Ͱ͋Δɻ
೤ฏߧঢ়ଶɾඇ೤ฏߧঢ়ଶʹ͓͚Δੜ੒-࠶݁߹཰ U ʹ͍ͭͯߟ͑ΔɻதੑྖҬͳͲͷ೤ฏߧঢ়ଶͰ͸ɺ pn = n2i ͕੒ΓཱͭͨΊɺU = 0 ͱͳΔɻ͜ͷ৔߹ʹ͓͍ͯ͸ిՙͷੜ੒ͱ࠶݁߹͕௼Γ߹͍ͬͯΔɻඇ೤ฏߧঢ়ଶɺதͰ΋ޫࢠ͕ೖࣹͳͲͯ͠ిࢠɾਖ਼޸ର͕
ա৒ʹଘࡏ͢Δ৔߹͸࠶݁߹͕༏੎ʹͳΔͨΊɺU > 0 ͱͳΔɻҰํͰɺۭ๡૚ͷΑ͏ʹిࢠɾਖ਼޸ର͕ଘࡏ͠ͳ͍৔߹͸ɺిࢠɾਖ਼޸ରͷੜ੒͕༏੎ʹͳΔͨΊɺU < 0 ͱͳΔɻΏ͑ʹɺSRH ϓϩηε༝དྷͷ҉ిྲྀ͸ۭ๡૚Ͱൃੜ͢Δɻ

Depletion Dark Currentۭ๡૚Ͱ͸ΩϟϦΞ͸΄΅ଘࡏ͠ͳ͍ͨΊɺ p, n ≪ ni ͱΈͳͤΔɻۭ๡ྖҬʹ͓͚Δ࠶݁߹଎౓ UDEP ͸ࣜ 2.38 Λ༻͍ͯɺ

UDEP = −σvth Nt (Et )ni1. ∼ − σvth Nt ni
2
Et − Ei
2 coshkB T(2.39)

ͱදͤΔɻ͜͜ͰɺUDEP ͸࠶݁߹த৺ͷΤωϧΪʔ͕ਅੑϑΣϧϛ४ҐʹҰக͢Δͱ͖ɺ͢ͳΘͪΤωϧΪʔΪϟοϓͷ΄΅தԝʹҰக͢Δ࣌ʹ࠷΋େ͖͘ͳΔͨΊɺEt ∼ Ei ͱͯۙ͠ࣅ͍ͯ͠ΔɻDepletion Dark Current IDEP [A] ͸ɺ−UDEP ʹి‫ؾ‬ૉྔ q ͱۭ๡ྖҬͷମੵ Apix Wdep (Apix ͸ϐΫηϧ͋ͨΓͷ໘ੵɺWdep ͸ۭ๡૚ް) Λ͔͚ɺࣜ 2.8 Λ୅ೖ͢Δͱɺ
!
"
Eg
1
3/2
IDEP ∼ qσvth Nt ni Apix Wdep ∝ Nt Wdep T exp −(2.40)
2
2kB T
ͱͳΔɻDepletion Dark Current ͸ΤωϧΪʔΪϟοϓͷதԝʹଘࡏ͢Δ࠶݁߹த৺ͷີ౓Nt ʹൺྫ͢Δɻ࠶݁߹த৺͸ Si ݁থதͷ֨ࢠܽؕ΍ෆ७෺ʹΑͬͯͭ͘ΒΕΔͨΊɺ൒ಋମͷ੡଄ϓϩηεʹେ͖͘ґଘ͢Δɻ·ͨɺDepletion Dark Current ͸ۭ๡૚ް Wdep ʹ΋ൺྫͯ͠૿Ճ͢ΔɻҰൠʹɺX ઢΠϝʔδηϯα͸‫ݕ‬ग़ޮ཰ΛߴΊΔ΂ۭ͘๡૚Λް͘
͢ΔͨΊɺDepletion Dark Current ͕ࢧ഑తʹͳΔ৔߹͕ଟ͍ɻ

2.5. X ઢ CMOS Πϝʔδηϯαͷ‫ج‬ຊతͳੑೳࢦඪ

25

Surface Dark Current
Si/SiO2 ք໘͕ۭ๡Խ͍ͯ͠ΔͱԾఆ͢ΔͱɺDepletion Dark Current ͱಉ༷ʹ p, n ≪ niͱΈͳͤΔɻSi/SiO2 ք໘ʹ͓͚Δ࠶݁߹଎౓ USURF ͸ࣜ 2.38 Λ༻͍ͯɺ
USURF (Et ) = −σvth NSURF (Et )ni1. ∼ − σvth NSURF ni
2
Et − Ei
2 coshkB T(2.41)

͜͜ͰɺNSURF (Et ) ͸ Si/SiO2 ք໘ʹ͓͚Δ୯Ґ໘ੵ͋ͨΓͷ࠶݁߹த৺ີ౓Ͱ͋Δɻ·ͨ Depletion Dark Current ͱಉ༷ʹɺEt ∼ Ei ͱͯۙ͠ࣅ͍ͯ͠ΔɻSurface Dark Current
ISURF [A] ͸ɺ−USURF ʹి‫ؾ‬ૉྔ q ͱϐΫηϧ͋ͨΓͷ Si/SiO2 ք໘ͷ໘ੵ ASURF Λ͔͚ͯɺ
!
"
Eg
1
3/2
ISURF ∼ qσvth NSURF ni ASURF ∝ NSURF T exp −(2.42)
2
2kB T
ͱදͤΔɻSurface Dark Current ʹ͓͍ͯ΋ಉ༷ʹɺΤωϧΪʔΪϟοϓͷதԝʹଘࡏ͢
Δ࠶݁߹த৺ͷີ౓ NSURF ʹൺྫ͢Δɻ͔͠͠ɺSi/SiO2 ք໘Ͱ͸ɺ݁থ֨ࢠ͕ෆ‫ن‬ଇʹऴ୺͍ͯ͠Δ͜ͱʹ‫ى‬Ҽͯ͠ɺ‫੍ې‬ଳதʹߴີ౓ͷ࠶݁߹த৺͕ଘࡏ͢ΔͨΊɺNSURF ͕ඇৗʹେ͖͘ͳΔɻΏ͑ʹɺిՙऩूྖҬͷ Si/SiO2 ք໘͕ۭ๡Խ͍ͯ͠Δ‫ݕ‬ग़‫Ͱث‬͸ɺ
Surface Dark Current ͕ࢧ഑తʹͳΓ͏Δɻ

Diﬀusion Dark Current
Diﬀusion Dark Current ͸ SRH ϓϩηεͱ͸ҟͳΓɺதੑྖҬʹଘࡏ͢Δগ਺ΩϟϦΞ͕ۭ๡૚ʹ֦ࢄ͢Δ͜ͱͰൃੜ͢Δɻ͜͜Ͱ͸ p ‫ܕ‬ͷηϯαΛԾఆ͢Δͱɺগ਺ΩϟϦΞ͸ిࢠͰ͋ΔɻதੑྖҬͷిࢠ෼෍ np ͸ 1 ࣍‫ݩ‬ͷ֦ࢄํఔࣜʹै͏ͨΊɺ/0
np (x) = np0 1 − exp (−x/Ln )(2.43)

ͱදͤΔɻ͜͜Ͱɺx ͸ۭ๡૚ͱதੑྖҬͷ‫ڥ‬քΛ‫ͨ͠ʹ఺ݪ‬தੑྖҬํ޲ͷਂ͞ɺLn ͸ిࢠͷ֦ࢄ௕ɺnp0 ͸ۭ๡૚ͱதੑྖҬͷ‫ڥ‬ք͔Βे෼཭ΕͨҐஔ (x ≫ Ln ) ʹ͓͚ΔɺதੑྖҬͷిࢠີ౓Ͱ͋Δɻ x ≫ Ln Ͱ͸ɺి৔͕͔͔͍ͬͯͳ͍ͨΊ೤ฏߧঢ়ଶʹ͋Δͱ
Έͳ͢ͱɺ࣭ྔ࡞༻ଇ pn = n2i (અ 2.2.2) ͕੒ΓཱͭͨΊɺ

np0 =

n2i
NA

(2.44)

ͱͳΔɻ͜͜ͰɺNA ͸ p ‫جܕ‬൘ͷΞΫηϓλೱ౓Ͱ͋Δɻ͕ͨͬͯ͠ɺۭ๡૚ͱதੑྖ
Ҭͷ‫ڥ‬ք෇ۙͷ֦ࢄిྲྀີ౓ JDIF [A] ͸ҎԼͷΑ͏ʹදͤΔɻ
(qDn n2idnp (((JDIF = −qDn=
(2.45)(
dx ( x=0
Ln NA

͜͜ͰɺDn ͸ిࢠͷ֦ࢄ܎਺Ͱ͋ΔɻϐΫηϧͷ໘ੵ Apix Λ༻͍Δͱɺ֦ࢄిྲྀ IDIF ͸ɺ!
"qApix Dn n2i
Eg
3
IDIF =∝ T exp −(2.46)
Ln NA
kB T

26

ୈ2ষ

X ઢ CMOS Πϝʔδηϯαͷ‫ૅج‬

ͱͳΔɻSRH ϓϩηε༝དྷͷ Depletion Dark Current ΍ Surface Dark Current ΑΓ΋ɺ͞Βʹ‫͘ڧ‬Թ౓ʹґଘ͢Δ͜ͱ͕Θ͔Δɻ͕ͨͬͯ͠ɺಛʹߴԹԼͰ͸ Diﬀusion Dark Current͕ࢧ഑తʹͳΓ͏Δɻ

2.5.5 ‫ݕ‬ग़ޮ཰‫ݕ‬ग़ޮ཰ (Quantum Eﬃciency: QE) ͸ɺ‫ݕ‬ग़‫ʹث‬ೖࣹͨ͠ X ઢͷ͏ͪͲΕ͚ͩ‫ݕ‬ग़Ͱ͖Δ͔Λࣔ͢஋Ͱ͋Δɻۭ๡૚Ͱ൓Ԡͨ͠ X ઢΛ࿙Εͳ͘‫ݕ‬ग़Ͱ͖Δཧ૝తͳঢ়‫گ‬Λߟ͑ͨ৔߹ɺ‫ݕ‬ग़ޮ཰͸ɺۭ๡૚ʹୡ͢Δ·Ͱͷෆ‫ײ‬૚ʹΑΔ‫ٵ‬ऩɺۭ๡૚ͷಁաͷ 2 ͭͷཁૉͰܾ·Δɻ͜ͷ৔߹ͷ‫ݕ‬ग़ޮ཰ QE ͸⎛⎜⎜ 4
QE(E) = exp ⎜⎜⎜⎝−
i

⎞ !
".
Wdep
lMi ⎟⎟⎟⎟⎟ × 1 − exp −λMi (E) ⎠λSi (E)(2.47)

ͱॻ͚ΔɻWdep ͸ۭ๡૚ްɺλSi ͸ Si ʹ͓͚Δ X ઢͷ‫ݮ‬ਰ௕͞ɺlMi ͱ λMi ͸ͦΕͧΕ෺࣭ Mi ͷෆ‫ײ‬૚ްͱ‫ݮ‬ਰ௕Ͱ͋Δɻ֤ X ઢΤωϧΪʔʹର͢Δ‫ݕ‬ग़ޮ཰͸ɺ௿ΤωϧΪʔଆ͸ෆ‫ײ‬૚ްɺߴΤωϧΪʔଆͰ͸ۭ๡૚ްʹґଘ͢Δɻ

27

ୈ 3 ষ SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃX ઢ SOI ϐΫηϧ‫ݕ‬ग़‫ث‬͸ɺSilicon-on-Insulator (SOI) ٕज़Λ༻͍ͯ X ઢʹ‫౓ײ‬Λ΋ͭ
Si ηϯα૚ͱ৴߸ిՙΛಡΈग़ͨ͢Ίͷ Si ճ࿏૚ΛҰମԽͤͨ͞ɺϞϊϦγοΫͳ X ઢ
CMOS ΠϝʔδηϯαͰ͋Δɻਤ 3.1 ʹ SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ͷ໛ࣜਤΛࣔ͢ɻηϯα૚Ͱੜ੒͞Εͨ৴߸ిՙΛಡΈग़ͨ͢Ίͷి‫ۃ‬ʮηϯεϊʔυʯͰऩू͠ɺCMOS ճ࿏૚ͰಡΈग़ͯ͠֎෦ʹग़ྗ͢Δɻߴൺ఍߅ͷηϯα૚ͱ௿ൺ఍߅ͷճ࿏૚Ͱઈԑ૚Λ‫ڬ‬ΜͰੵ૚ͨ͠ಛ༗ͷߏ଄ʹΑΓɺैདྷͷ൒ಋମΠϝʔδηϯαͰ͸ಘΒΕͳ͔༷ͬͨʑͳར఺͕
ಘΒΕΔɻຊষͰ͸ɺSOI ‫ݕ‬ग़‫ͦͱث‬ͷಛ௃ɺ͓Αͼ SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ‫ૅج‬Λ঺հ͢Δɻ

~ 9 µm回路層(低比抵抗)

0.2 µm

絶縁層(SiO2)

NMOS PMOS

Bias Ring

Sense node (n+)

50-500 µmp−

センサ層(高比抵抗)

Buried n-well
(BNW)

−
− +
−− +
++

p+
Al optical blocking layer

X-ray

Back-Bias Voltage (VBB)

ਤ 3.1: SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ͷ 3 ࣍‫ߏݩ‬଄ɻਤதͷ p+ , n+ ͸ෆ७෺͕ߴೱ౓ɺp− ͸௿ೱ౓
Ͱ͋Δ༷Λද͢ɻ

˙ 3.1

SOI ‫ݕ‬ग़‫ث‬

3.1.1 SOI σόΠεͷߏ଄SOI σόΠε͸ɺCMOS ճ࿏༻ Si ૚ɺઈԑ૚ɺSi ηϯα૚͕ॱʹੵ૚ͨ͠ߏ଄Λͯ͠
͍Δɻ͜ͷߏ଄͸ SOI σόΠεಛ༗Ͱ͋ΓɺҰൠతͳ CMOS ճ࿏෦ (Bulk CMOS) ͱ͸େ

28

ୈ3ষ

SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃ͖͘ҟͳΔɻSOI CMOS ͱɺҰൠతͳ Bulk CMOS ͷߏ଄Λਤ 3.2 ʹࣔ͢ɻBulk CMOS Ͱ͸‫ج‬൘ʹෆ७෺͕ߴೱ౓ͷ΢ΣϧΛຒΊࠐΜͩෳࡶͳߏ଄Λ͍ͯ͠ΔɻͦͷҰํͰɺSOI
CMOS Ͱ͸ Bulk CMOS ͷ΢Σϧߏ଄ʹ૬౰͢Δ෦෼Λઈԑମʹஔ͖‫͑׵‬Δ͜ͱͰɺྡΓ߹͏τϥϯδελΛి‫ؾ‬తʹ෼཭͍ͯ͠Δɻ
(a)

(b)

ਤ 3.2: (a) Bulk CMOS σόΠεͱ (b) SOI CMOS σόΠεͷஅ໘ਤ [33]ɻਤதͷΩϟύγ
λ͸ pn ઀߹෦ͷۭ๡૚ʹΑΔ‫د‬ੜ༰ྔΛҙຯ͢Δɻ

3.1.2 SOI ‫ݕ‬ग़‫ث‬ͷಛ௃
FORCE ౥ࡌͷ‫ݕ‬ग़‫ث‬͸ɺ10 µs ͷ࣌ؒ෼ղೳΛ࣮‫͢ݱ‬ΔͨΊͷߴ଎ճ࿏ɺX ઢʹ‫౓ײ‬Λ΋ͭͨΊͷް͍ۭ๡૚ɺ৴߸ಡΈग़͠‫ػ‬ೳͱτϦΨग़ྗ‫ػ‬ೳΛ༗͢Δճ࿏Λ୯Ұըૉʹ࣮૷͢ΔͨΊͷߴूੵੑɺখ‫ܕ‬Ӵ੕Ͱେ໘ੵͷΠϝʔδϯάΤϦΞΛ΋ͭ‫ݕ‬ग़‫ث‬Λӡ༻͢Δ
ͨΊͷ௿ফඅిྗɺӉ஦ۭؒͱ͍͏‫ࣹ์͍͠ݫ‬ઢ‫΁ڥ؀‬ͷ଱ੑͳͲɺ༷ʑͳཁ‫ٻ‬Λୡ੒͠ͳ͚Ε͹ͳΒͳ͍ɻSOI CMOS ͸ҎԼʹྻ‫͢ڍ‬ΔΑ͏ʹɺશͯΛಉ࣌ʹୡ੒Ͱ͖Δɻ• ճ࿏ͷߴ଎ಈ࡞ͱް͍ۭ๡૚ͷ࣮‫ݱ‬զʑͷ SOI ϐΫηϧ‫ݕ‬ग़‫ث‬͸ʮSmartcut ๏ [34]ʯΛ༻͍ͯ੡଄͞Ε͍ͯΔɻ͜ͷ੡଄๏ͷϝϦοτ͸ɺผʑͷൺ఍߅ͷ΢ΣϋΛ઀߹͢Δ͜ͱ͕ՄೳͰ͋Δ఺Ͱ͋ΔɻͦΕΏ͑ɺηϯα૚ʹ͸ߴൺ఍߅ͷ Si ΢Σϋɺճ࿏૚ʹ͸௿ൺ఍߅ͷ Si ΢ΣϋΛબ୒Ͱ͖Δɻ͜ΕʹΑΓɺBulk CMOS ͷΑ͏ͳ୯Ұͷ΢ΣϋͰ͸೉͔ͬͨ͠ɺX ઢ‫౓ײ‬ΛߴΊΔͨΊͷް͍ۭ๡૚ͱ CMOS ճ࿏ͷߴ଎ಈ࡞Λಉ࣌ʹ࣮‫͢ݱ‬Δ͜ͱ͕Ͱ͖Δɻ• ߴूੵੑ
ଟ਺ͷిࢠճ࿏Λूੵ͢Δ্ͰॏཁͱͳΔͷ͕ɺҟͳΔτϥϯδελؒͷి‫ؾ‬త‫ׯ‬ব (ΫϩετʔΫ) ͷ཈੍Ͱ͋ΔɻSOI Ͱ͸ҟͳΔτϥϯδελؒɺ‫ͼٴ‬ηϯα૚ͱͷؒʹઈԑମΛ‫ڬ‬Μͩ୯७ͳߏ଄ͰઈԑͰ͖Δɻ͜ΕʹΑΓɺߴີ౓ʹτϥϯδ
ελΛ഑ஔ͠΍͘͢ͳΔͨΊɺߴूੵԽΛ࣮‫͖Ͱݱ‬Δɻ

• ௿ফඅిྗ

τϥϯδελͷपғΛઈԑମͰ෴͏ߏ଄Ͱ͋ΔͨΊɺBulk CMOS ͷΑ͏ͳ‫ج‬൘΁ͷϦʔΫిྲྀ͸ൃੜ͠ͳ͍ɻ·ͨɺτϥϯδελͷ‫د‬ੜ༰ྔ͕খ͍͜͞ͱ΋ɺ௿ফ

3.1. SOI ‫ݕ‬ग़‫ث‬29අిྗԽʹߩ‫͍ͯ͠ݙ‬ΔɻBulk CMOS Ͱ͸पғͷ well ͱͷ pn ઀߹Ͱ‫ܗ‬੒͞ΕΔۭ
๡૚͕େ͖ͳ‫د‬ੜ༰ྔ1 ͱͳΓɺճ࿏ͷෛՙ༰ྔͱͯ͠ৼΔ෣͏ɻҰํɺSOI Ͱ͸ઈԑମͰ෴͏ͨΊɺ‫د‬ੜ༰ྔ͸ඇৗʹখ͘͞ͳΔɻͦͷͨΊɺτϥϯδελͷεΠο
νϯά࣌ʹྲྀΕΔిྲྀྔΛ‫ݮ‬Β͢͜ͱ͕Ͱ͖Δɻ• ์ࣹઢ଱ੑ
൒ಋମσόΠεʹ୯ൃͷߴΤωϧΪʔཻࢠ͕ೖࣹ͢Δ͜ͱʹΑͬͯ‫͜ى‬Δಈ࡞ෆྑΛ૯শͯ͠γϯάϧΠϕϯτޮՌ (Single Event Eﬀect: SEE) ͱΑͿɻ͜ͷ‫ݱ‬৅͸ɺӉ஦‫ʹڥ؀‬ଘࡏ͢Δϓϩτϯ (ཅࢠઢ)ɺॏཻࢠઢͳͲʹΑͬͯҾ͖‫͜͞ى‬ΕΔɻߴ
ΤωϧΪʔཻࢠ͕τϥϯδελΛ؏௨͢Δͱɺ‫ܦ‬࿏ʹԊͬͯେྔͷిࢠɾਖ਼޸ରΛ
ੜ੒͢Δɻ͜ͷ‫ܦ‬࿏ʹΑΓɺి‫ؾ‬తʹ෼཭͍ͯ͠Δ෦෼͕ಋ௨ͯ͠͠·͏ͱɺେి
ྲྀ͕ྲྀΕͯ͠·͍ɺૉࢠ͕ഁଛͯ͠͠·͏͜ͱ͕͋Δ (Single Event Latch up: SEL)ɻ
SOI Ͱ͸पΓΛઈԑମͰ෴͍ͬͯΔͨΊɺSEL ͸‫ݪ‬ཧతʹ‫͜ى‬Βͳ͍ [35]ɻ͞Βʹɺ(FD-)SOI2 Ͱ͸ిࢠɾਖ਼޸ର͕ൃੜ͢Δ Si ͷମੵ͕খ͍ͨ͞Ίɺେྔͷిࢠɾਖ਼޸
ର͕ιʔεɾυϨΠϯʹऩू͞ΕΔ͜ͱʹΑΓҾ͖‫͜͞ى‬ΕΔɺσδλϧճ࿏ͷϩδοΫͷ൓స (Single Event Upset: SEU) Λେ෯ʹ཈੍͢Δ͜ͱ͕ՄೳͰ͋Δ [35]ɻ

3.1.3 SOI ‫ݕ‬ग़‫ث‬ͷ՝୊: όοΫήʔτޮՌ
SOI ‫ݕ‬ग़‫ث‬ಛ༗ͷճ࿏૚ɾηϯα૚Ұମߏ଄͕ɺ͔͑ͬͯτϥϯδελʹѱӨ‫ڹ‬Λ‫΅ٴ‬͢໰୊΋͋ΔɻͦΕ͸ɺτϥϯδελͷᮢ஋ిѹ͕όοΫόΠΞεిѹͷӨ‫ڹ‬Λड͚ͯมಈͯ͠͠·͏‫ݱ‬৅ɺ͢ͳΘͪόοΫήʔτޮՌͰ͋ΔɻX ઢ‫ݕ‬ग़‫Ͳͳث‬ɺް͍ۭ๡૚Λඞ
ཁͱ͢Δ৔߹ɺηϯα૚ʹߴ͍όοΫόΠΞεిѹΛҹՃ͢Δɻ͜ͷߴిѹ͸τϥϯδε
λͷϘσΟిҐΛมԽͤ͞ɺ݁Ռతʹᮢ஋ిѹ͕มԽͯ͠͠·͏ɻᮢ஋ిѹͷมಈ͸τϥϯδελͷిྲྀిѹಛੑʹ‫͘ڧ‬Ө‫͢ڹ‬ΔͨΊɺCMOS ճ࿏͕ਖ਼ৗʹಈ࡞͠ͳ͘ͳΔɻ
όοΫήʔτޮՌ͸ɺਤ 3.1 ʹࣔ͢Α͏ͳߴೱ౓ͷຒΊࠐΈ΢Σϧ (Buried well)3 Λ‫ܗ‬੒͢Δ͜ͱͰղܾͰ͖ΔɻຒΊࠐΈ well ͸΄ͱΜͲۭ๡Խ͞Εͳ͍ͨΊɺηϯεϊʔυͱ౳ిҐʹ‫ݻ‬ఆ͞ΕΔɻ͕ͨͬͯ͠ɺ͜ͷ૚͕ճ࿏૚ͱηϯα૚ؒͷ੩ిγʔϧυͱͯ͠࡞
༻͢ΔͨΊɺόοΫήʔτޮՌΛ཈੍Ͱ͖Δɻਤ 3.3 ʹɺຒΊࠐΈ well ͷ༗ແʹΑΔτϥ
ϯδελͷಛੑมԽΛࣔ͢ɻຒΊࠐΈ well ͷಋೖʹΑΓಛੑͷมԽ͕཈͑ΒΕɺόοΫήʔτޮՌΛ཈੍Ͱ͖͍ͯΔ͜ͱ͕֬ೝͰ͖Δɻ1

͜ͷ pn ઀߹ʹΑΔ༰ྔ͸ʮ઀߹༰ྔʯͱ΋‫ݺ‬͹ΕΔɻ
SOI ͸νϟωϧ૚ͷް͞ʹΑΓɺ෦෼ۭ๡‫( ܕ‬Partially Depleted: PD) ͱ‫׬‬શۭ๡‫( ܕ‬Fully Depleted: FD)ͷ 2 छྨʹେผ͞ΕΔɻPD-SOI Ͱ͸ Si ͷମੵ͕େ͖͍ͨΊɺ์ࣹઢʹର͢Δ‫·ߴ͕౓ײ‬ΔɺήʔτԼʹి‫ؾ‬తʹු༡ͨ͠தੑྖҬ͕࢒Γ΍͘͢ͳΓɺಛੑ͕มԽ͢ΔΩϯΫޮՌ͕ൃੜ͠΍͍͢ͳͲɺ༷ʑͳ໰୊͕ଘࡏ͢Δɻ
3ηϯα૚ʹ p ‫جܕ‬൘Λ༻͍Δ৔߹͸ Buried n-well (BNW) Λɺn ‫جܕ‬൘Λ༻͍Δ৔߹͸ Buried p-well(BPW) Λಋೖ͢Δɻ
2

30

ୈ3ষ

(a)

SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃ(b)ਤ 3.3: ຒΊࠐΈ well ʹΑΔόοΫήʔτޮՌͷ཈੍ [36]ɻ(a) ຒΊࠐΈ well ͳ͠ (b) ຒΊࠐΈ well ͋Γ ͷ৔߹ʹ͓͚Δ NMOS ͷೖग़ྗಛੑɻηϯα૚͸ n ‫͋Ͱܕ‬ΔͨΊɺBPW
ͷ༗ແΛ͍ࣔͯ͠Δɻԣ࣠͸ήʔτɾιʔεؒͷిҐࠩɺॎ࣠͸υϨΠϯɾιʔεؒͷిྲྀ஋Ͱ͋Δɻ

˙ 3.2

SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ʮXRPIXʯXRPIX (X-Ray SOI Pixel Sensor) ͸ɺ‫౎ژ‬େֶ͕ओಋͰɺߴΤωϧΪʔՃ଎‫ߏػڀݚث‬(KEK)ɺ‫࡚ٶ‬େֶɺ౦‫ژ‬ཧՊେֶɺ੩ԬେֶͳͲͱ‫ڞ‬ಉͰ։ൃΛਐΊ͖ͯͨ X ઢఱจ༻SOI ϐΫηϧ‫ݕ‬ग़‫͋Ͱث‬Δ [19]ɻ2010 ೥ɺ࠷ॳͷૉࢠʮXRPIX1ʯͷ։ൃΛൽ੾Γʹ [37]ɺ
FORCE ౥ࡌʹ޲͚༷ͯʑͳվྑΛॏͶ͖ͯͨ (ਤ 3.4)ɻ
XRPIX ͷ࠷େͷಛ௃͸ɺ֤ϐΫηϧʹτϦΨ৴߸Λग़ྗ͢Δൺֱ‫ث‬ճ࿏ (τϦΨճ࿏)Λ࣮૷͍ͯ͠Δ͜ͱͰ͋ΔɻX ઢ͕ೖࣹͨ͠λΠϛϯάͰɺτϦΨग़ྗͨ͠ϐΫηϧͱͦͷपลͷΈΛಡΈग़͢ʮΠϕϯτ‫ۦ‬ಈಡΈग़͠ʯʹΑΓɺ< 10 µs ͱ͍͏༏Εͨ࣌ؒ෼ղ
ೳ [38] ͱߴεϧʔϓοτ (> 10 kHz) Λ࣮‫͢ݱ‬ΔɻຊઅͰ͸ XRPIX ͷ‫ج‬ຊతͳཁૉΛ঺հ
͢Δɻ

3.2.1 XRPIX ͷϐΫηϧճ࿏࠷৽ͷ XRPIX ͷϐΫηϧճ࿏Λਤ 3.5 ʹɺͦͷಈ࡞੍‫ޚ‬ͷλΠϛϯάνϟʔτΛਤ 3.6
ࣔ͢ɻXRPIX ͷϐΫηϧճ࿏͸େ͖͘෼͚ͯΞφϩάճ࿏ͱτϦΨճ࿏Ͱߏ੒͞Ε͓ͯΓɺΞφϩάճ࿏ͷ࠷ऴஈ͸पลճ࿏΁ͱ‫͍͕ͯͬܨ‬Δɻ؆୯ʹಡΈग़͠ͷྲྀΕΛઆ໌͢Δɻ·ͣɺ֤ϐΫηϧͰऩूͨ͠ిՙΛΞφϩάճ࿏ॳஈͷిՙ༗‫ײ‬Ξϯϓ (Charge Sensitive Amplifier: CSA) Ͱిѹʹม‫͢׵‬ΔɻͦͷిѹϨϕϧΛτϦΨճ࿏Ͱ༧Ίઃఆͨ͠ʮτϦΨᮢ஋ిѹʯͱൺֱ͠ɺͦͷᮢ஋Λ௒͑ͨϐΫηϧ

1.0 mm2011
1.0 mm2012
4.0 mm2013
1.0 mm

4.6 mmXRPIX2

4.6 mmXRPIX2b

XRPIX4
2.9 mm

2.4 mmFirst Model
Trigger Output(Event-Driven)

6.0 mm

6.0 mm

21.9 mm

24.6 mm2018

1.7 mm

2.9 mmCharge Sensitive
AmplifierMiddle Size

2016-2017
XRPIX6D, 6bD

1.0 mm2015

XRPIX3 XRPIX3b

XRPIX1 XRPIX1b
2.4 mm2014

21.9 mm2010

31

24.6 mm

3.2. SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ʮXRPIXʯ

6.0 mmNew Readout
Circuit13.8 mm15.3 mm

Large Size

2019
XRPIX8+XRPIX6H

2026?

4.45 mm
3.4 mmXRPIX6CXRPIX8XRPIX6E
13.8 mm15.3 mm

D-SOI Structure

PDD Structure

Pixel Structure

6.0 mmLarge Sizewith D-SOI

New PDD Structure

ਤ 3.4: XRPIX γϦʔζͷ։ൃ࢙ɻ͔ΒτϦΨ৴߸Λग़ྗ͢ΔɻτϦΨ৴߸Λग़ྗͨ͠ϐΫηϧͷిѹϨϕϧ͸Ξφϩάճ࿏͔Β‫ޙ‬ஈͷपลճ࿏ʹ఻ୡͯ͠ಡΈग़͠ɺ֎෦ʹग़ྗ͢Δɻ
पลճ࿏ͷಡΈग़͠ͷྲྀΕ͸෇࿥ A.1 Ͱ঺հ͢Δ͜ͱʹͯ͠ɺ͜͜Ͱ͸ XRPIX ͷϐΫηϧճ࿏ͷॏཁͳཁૉʹ͍ͭͯઆ໌͢ΔɻCSA ճ࿏CSA ճ࿏͸ɺιʔε઀஍૿෯ճ࿏ (2.4.1 અ) ʹϑΟʔυόοΫΩϟύγλ CFB Λ௥Ճͨ͠΋ͷͰ͋ΓɺಡΈग़͠ϊʔυͰऩूͨ͠ిՙΛɺిՙྔʹൺྫ͢Δిѹʹม‫͢׵‬Δ‫ػ‬ೳΛ΋ͭɻਤ 3.7 ʹ CSA ͷճ࿏ਤΛࣔ͢ɻXRPIX ΁ͷ࣮૷ΛՃຯͯ͠ɺηϯα༰ྔ (‫ݕ‬ग़‫ث‬༰ྔ: CD ) ΋ߟྀͯ͠ಈ࡞‫ݪ‬ཧΛ֬ೝ͢Δɻηϯα૚Ͱ৴߸ిՙ QSIG ͕ੜ੒͞Εͨͱ͠ɺͦΕʹΑΔೖྗిҐɺग़ྗిҐͷมԽΛͦΕͧΕ vin , vout ͱ͢ΔͱɺCFB , CD ؒͷిՙอଘଇΑΓɺ
QSIG = CD vin + CFB (vin − vout )(3.1)
ͱදͤΔɻࣜ 2.26: vout = −ACS vin ͱ࿈ཱͯ͠ɺ

vin =vout = −QSIGCD + (ACS + 1)CFB

QSIG
!
"
1
1
CD + 1 +
CFB
ACS
ACS

(3.2)
(3.3)

ͱͳΔɻACS ͕े෼େ͖͍ͱ͍͏ཧ૝తͳ৔߹ɺvin ≃1 QSIGACS CFB

(3.4)

ୈ3ষ

RST_COMP1

SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃ

RST_COMP2

Bad Pixel Mask
EN_TRIG_OUT
S Q

VDD18
COMP
Cap. 2

COMP
Cap. 1

トリガ回路

TRIG_ROW (OR)R
S Q

TRIG_COL (OR)32

R

Comparator2

Comparator1

SR Latch

RST_TRIGD

GND

VDD18
VB_SF

アナログ回路VB_CSA

Trigger
RST_PD

STORE

ROW
READ

SF

周辺回路

CSA

RST_VTHPD

Signal

RST_CDS

Sense NodeFeedback Cap.
CFB

Sample Cap.

CCDS

GND

VCDS Vthਤ 3.5: XRPIX ͷϐΫηϧճ࿏ɻΞφϩάճ࿏ɺτϦΨճ࿏͔Βߏ੒͞Ε͓ͯΓɺΞφϩάճ࿏͸‫ޙ‬ஈͷपลճ࿏΁ͱ‫͕ܨ‬Δɻ

3.2. SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ʮXRPIXʯ

33

Reset Comparator

Reset CDS

RST_PD

Exposure

Scan

10 µs

RST_CDS
RST_VTH

15 µs
10 µs

RST_COMP1

12 µs
1 Clock

RST_COMP2

16 µs

STORE

10 µs
1 Clock

X-ray

Analog Voltage@ After CDS

VSIG

Vtr = Vth − VCDSTRIG_OUT(a)(i)(ii) (iii)

(iv)

(b)

(c)

(v)

(d)

図 3.9

(vi)

図 3.10ਤ 3.6: XRPIX ʹ͓͚Δ੍‫ޚ‬ಈ࡞ͷλΠϛϯάνϟʔτɻλΠϛϯάνϟʔτ಺ʹࣔͨ࣌ؒ͠͸ຊम࢜࿦จͰ࢖༻ͨ͠ύϥϝʔλͰ͋Γɺ࠷ద஋Ͱ͸ͳ͍ɻ·ͨɺεέʔϧ΋ద੾Ͱ͸ͳ͍ɻ·ͨɺ1 Clock = 40 ns Ͱ͋Δɻ

VDD
Vb
QSIG
Vout
CFB

CD

ਤ 3.7: XRPIX ʹ౥ࡌ͍ͯ͠Διʔε઀஍‫ܕ‬ͷ CSA ճ࿏ɻ

34

ୈ3ষ

vout ≃ −QSIG
CFB

SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃ
(3.5)ͱۙࣅͰ͖Δɻ
CSA ճ࿏Λ XRPIX ʹ͓͚Δॳஈͷిՙ‫ݕ‬ग़෦ͱͯ͠༻͍Δར఺ʹ͍ͭͯߟ͑Δɻ೾ߴ஋͔Β X ઢͷΤωϧΪʔΛ‫ੵݟ‬΋Δ XRPIX ʹ͓͍ͯɺ࠷΋ॏཁͳύϥϝʔλͷҰ͕ͭɺϊΠζੑೳͰ͋ΔɻϊΠζੑೳΛ޲্ͤ͞ΔҰͭͷख๏͸ɺॳஈͰ৴߸Λେ͖͘૿෯͞
ͤΔ͜ͱͰɺ‫ޙ‬ஈͷճ࿏Ͱ৐ΔϊΠζʹΑΔ‫د‬༩Λ‫ݮ‬Β͢͜ͱͰ͋Δɻैདྷͷ XRPIX γϦʔζͰ͸ॳஈͷిՙ‫ݕ‬ग़෦ͱͯ͠ιʔεϑΥϩΞճ࿏Λ࠾༻͍ͯͨ͠ɻιʔεϑΥϩΞ
ճ࿏Ͱ͸ɺೖྗஈͱ GND ؒͷΩϟύγλʹిՙ͕஝ੵ͞ΕΔ͜ͱʹΑΔిҐͷมԽΛ৴߸ͱͯ͠औΓग़͢ɻͦͷͨΊɺେ͖ͳ৴߸ΛಘΔʹ͸ೖྗஈͱ GND ؒͷ༰ྔɺ͢ͳΘͪηϯεϊʔυͱ‫ج‬൘ؒͷ pn ઀߹ʹΑΔ༰ྔʢηϯα༰ྔ CD ʣΛখ͘͢͞Δඞཁ͕͋Δɻ
͔͠͠ɺैདྷͷ XRPIX Ͱ͸ηϯα༰ྔ͕ඇৗʹେ͖͘ɺେ͖ͳిѹརಘΛಘΒΕͳ͔ͬͨɻͳͥͳΒɺόοΫήʔτޮՌΛ཈੍͢ΔͨΊʹηϯεϊʔυͷαΠζΛେ͖ͯ͘͠
͍ͨͨΊͰ͋Δɻͦ͜Ͱಋೖ͞Εͨͷ͕ɺCSA ճ࿏Ͱ͋ΔɻCSA ճ࿏ʹ͓͚Δ࠷େͷར఺͸ɺࣜ 3.5 ͔ΒΘ͔ΔΑ͏ʹɺ΄΅ CFB ͷΈͰརಘ͕ܾ·Δ͜ͱͰ͋Δɻ͜ΕʹΑΓɺόοΫήʔτޮՌͷ཈੍ͱརಘ޲্Λಉ࣌ʹ࣮‫͠ݱ‬ɺਤ 3.8 ʹࣔ͢Α͏ͳϊΠζੑೳͷϒϨΠΫεϧʔΛୡ੒ͨ͠ɻ
(a)

(b)

ਤ 3.8: (a) XRPIX ʹ͓͚Δม‫׵‬ήΠϯͱ BPW ͷαΠζͷؔ܎ [39]ɻ͜͜Ͱϓϩοτͨ͠XRPIX ͷηϯα૚͸ n ‫͋Ͱܕ‬ΔͨΊɺηϯεϊʔυपΓͷ BPW ͷαΠζΛ͍ࣔͯ͠Δɻ(b) XRPIX ʹ͓͚ΔಡΈग़͠ϊΠζͱม‫׵‬ήΠϯͷؔ܎ [39]ɻ

CDS ճ࿏
Ξφϩάճ࿏͸ɺkTC ϊΠζ௿‫ݮ‬Λߦ͏‫ػ‬ೳΛඋ͑ͨ૬ؔೋॏαϯϓϦϯά (Correlated
Double Sampling: CDS) ճ࿏Λ༗͍ͯ͠ΔɻXRPIX ʹ͓͍ͯ͸ϐΫηϧʹ஝ੵͨ͠ిՙͷϦηοτΛߦ͏ࡍʹൃੜ͢Δ kTC ϊΠζ͕ඇৗʹେ͖͍ɻͳͥͳΒɺCSA ճ࿏Ͱ͸େ͖ͳήΠϯΛಘΔͨΊʹɺখ͘͞ͳΔΑ͏ઃ‫͍ͯ͠ܭ‬ΔϑΟʔυόοΫΩϟύγλ CFB ʹ൓3.2. SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ʮXRPIXʯ

35ൺྫͯ͠ kTC ϊΠζ͕େ͖͘ͳΔͨΊͰ͋ΔɻCDS ճ࿏Λ‫ؚ‬ΉΞφϩάճ࿏ͷಈ࡞ (ਤ3.9) ͔ΒɺϊΠζ௿‫ݮ‬ͷख๏ʹ͍ͭͯઆ໌͢Δɻ(a) ϐΫηϧΞφϩάճ࿏ͷϦηοτΛߦ͏ɻRST PD ͱ RST CDS Λ ON ʹ͢Δ͜ͱͰɺ੺ɺ྘Ͱࣔͨ͠ྖҬ͸ͦΕͧΕ VRST , VCDS ͷిҐʹ‫ݻ‬ఆ͢Δɻ(b) RST PD Λ OFF ʹ͢Δɻ͜ͷͱ͖େ͖ͳ kTC ϊΠζ VN1 ͕੺ɺ੨Ͱࣔͨ͠ྖҬʹՃΘΔɻ͜͜ͰɺRST CDS Λ ON ʹ͍ͯ͠ΔͨΊ྘Ͱࣔͨ͠ྖҬʹ͸఻ΘΒͳ͍͜ͱʹ஫ҙ͢Δɻ
(c) RST CDS Λ OFF ʹ͢Δɻ͜ͷͱ͖ CDS Ωϟύγλͷ༰ྔ CCDS ʹ൓ൺྫ͢Δ kTC ϊΠζ VN2 ͕྘Ͱࣔͨ͠ྖҬʹՃΘΔɻ|VN2 | ≪ |VN1 | ΑΓɺ੺ɺ੨Ͱࣔͨ͠ྖҬͰ͸ VN2
ͷ‫د‬༩͸ແࢹͰ͖Δɻ(d) X ઢ༝དྷͷ৴߸ిՙ͕ηϯεϊʔυʹऩू͞Εɺ੺Ͱࣔͨ͠ྖҬͷిҐ͕ −∆V ͚ͩมԽͨ͠ͱ͢Δɻ͜͜Ͱɺηϯα૚ʹ p ‫ܕ‬൒ಋମΛ༻͍Δిࢠऩू‫ܕ‬ͷ XRPIX Ͱ͸
−∆V < 0 ʹͳΔ͜ͱʹ஫ҙ͢Δɻ͜ͷͱ͖ 3.2.1 અΑΓɺ൓స૿෯͞Εͯ੨ͷྖҬ͸ACSA ∆V Ճࢉ͞ΕΔɻ·ͨɺCCDS ʹ͔͔Δిѹ͕อ࣋͞ΕΔΑ͏ʹిҐ͕มԽ͢ΔͨΊɺ྘ͷྖҬ΋ ACSA ∆V มԽ͢Δɻ࠷ऴతʹಘΒΕΔ৴߸͸ɺCDS ճ࿏ͷϦηοτిѹ VCDS ͱͷࠩʹͳΔͷͰɺ(VCDS + VN2 + ACSA ∆V) − VCDS = VN2 + ACSA ∆V(3.6)

ͱදͤΔɻ͜ͷΑ͏ʹɺkTC ϊΠζ͸਺ fF ఔ౓ͷ CFB Ͱܾ·Δ VN1 ͔Β CDS Ωϟύγλ
༰ྔ 240 fF ʹ൓ൺྫ͢Δ VN2 ʹஔ͖‫׵‬Θ͍ͬͯΔ͜ͱ͕Θ͔Δɻ͜ΕʹΑΓɺkTC ϊΠζΛେ෯ʹ௿‫͖Ͱݮ‬Δɻ

τϦΨճ࿏FORCE ͷϝΠϯϞʔυͱͯ͠༻͍ΔΠϕϯτ‫ۦ‬ಈಡΈग़͠ͷࠜ‫װ‬͸ɺ֤ϐΫηϧʹ࣮૷ͨ͠τϦΨճ࿏͕୲͍ͬͯΔɻτϦΨճ࿏͸ 2 ͭͷΠϯόʔλνϣούʔ‫ܕ‬ίϯύϨʔλͱͦͷ‫ޙ‬ஈͷ Set-Reset (SR) ϥονͰߏ੒͞Ε͍ͯΔɻίϯύϨʔλͰ͸ೖྗిѹ͕ઃఆిѹ (τϦΨᮢ஋ిѹ) Λ௒͑ΔͱΠϯόʔλͷ࿦ཧ͕൓స͠ɺͦΕΛ‫ޙ‬ஈͷ SR ϥονͰड͚ͯτϦΨ৴߸Λग़ྗ͢ΔɻSR ϥον͸ɺΠϯόʔλʹେ͖ͳ؏௨ిྲྀΛ཈͑Δ໾
ׂ΋΋ͭɻίϯύϨʔλΛϦηοτ͢ΔࡍʹΠϯόʔλͷ PMOSɺNMOS ͕ಉ࣌ʹ ON ʹ
ͳΔ͜ͱͰྲྀΕΔ؏௨ిྲྀ͕ɺফඅిྗͷ૿Ճͱσδλϧి‫ݯ‬ͷిѹ߱ԼΛটͨ͘ΊͰ͋
Δɻ͜ͷτϦΨճ࿏ͷಈ࡞Λਤ 3.10 Λ༻͍ͯઆ໌͢Δɻ(i) RST VTHɺRST COMP1ɺRST COMP2 Λ HighɺRST CDS Λ Low ʹͯ͠ɺίϯύϨʔλΛϦηοτ͢Δɻ͜ͷͱ͖ɺCDS Ωϟύγλ‫ޙ‬ஈͷిҐ͸ Vth ʹͳΓɺ఺ P,
Q ͷిҐ͸ॳஈͷίϯύϨʔλͷಈ࡞఺ʹରԠ͢Δ V1 ʹͳΔɻ·ͨɺ఺ R, S ͷిҐ͸‫ޙ‬ஈͷίϯύϨʔλͷಈ࡞఺ V2 ʹͳΔɻͳ͓ɺSR ϥον͸ίϯύϨʔλͷϦηοτ͕‫ྃ͢׬‬Δ (iv) ·Ͱ OFF ʹ͓͖ͯ͠ɺτϦΨग़ྗΛແޮʹ͢Δɻ

36

ୈ3ষ
(a) ピクセル回路リセット

SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃ

Trigger Circuit

VDD18
VB_SF
VB_CSASF

VCDS

Feedback Cap.

CSA

RST_VTH

Sense Node

PD

CCDS

ColumnAmp.

RST_CDS

STORE

Sample Cap.

RST_PD

VRST

ROW
READ

VCDS

Vth

GND

(b) RST_PD : OFF
Trigger Circuit

VDD18
VB_SF
VB_CSA

SF

Feedback Cap.

CSA

RST_VTH

Sense Node

PD

CCDS

ColumnAmp.

RST_CDSSTORE

VRST + VN1VCDSVRST + VN1
Sample Cap.

RST_PD

ROW
READ

VCDS

Vth

GND

(c) RST_CDS : OFF
Trigger Circuit

VDD18
VB_SF
VB_CSA

SF

CSA

CCDS

VCDS

Vth

ColumnAmp.

RST_VTH

Feedback Cap.

PDVCDS + VN2
RST_CDSSTORE

VRST + VN1
Sense Node

VRST + VN1
Sample Cap.

RST_PD

ROW
READ

GND

(d) 信号 −ΔV < 0 が加わった場合

Trigger Circuit

VDD18
VB_SF
VB_CSA

Feedback Cap.

CSA

CCDS

RST_VTH

Sense Node

PD

STORE

VCDS + VN2+ ACSAΔVRST_CDSVRST + VN1− ΔV

VRST + VN1+ ACSAΔV
Sample Cap.

RST_PD

SF

VCDS

Vth

ROW
READ

ColumnAmp.

GND

ਤ 3.9: CDS ճ࿏Λ‫ؚ‬ΉϐΫηϧΞφϩάճ࿏ͷಈ࡞ͷྲྀΕɻ֤৔ॴͷిҐΛͦΕͧΕ੺ɺ੨ɺ྘৭Ͱ͍ࣔͯ͠Δɻ

3.2. SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ʮXRPIXʯ

37(ii) RST VTH Λ Low ʹ͢Δɻ͜ͷͱ͖ɺίϯύϨʔλ͸Ϧηοτঢ়ଶͷ··Ͱ͋Δɻ(iii) RST COMP1 Λ Low ʹ͢Δɻ͜ͷͱ͖ɺ఺ P ʹ͸ϦηοτϊΠζ VN1 ͕ɺ఺ Q ʹ͸ిҐ A1 VN1 ͕ՃΘΔɻ͜͜ͰɺલஈͷίϯύϨʔλͷ૿෯཰Λ A1 ͱͨ͠ɻ͜ͷ࣌ɺϦηοτঢ়ଶʹ͋Δ‫ޙ‬ஈͷίϯύϨʔλʹ͸ϊΠζ͸఻ΘΒͳ͍͜ͱʹ஫ҙ͢Δɻ
(iv) RST COMP2 Λ Low ʹ͢Δɻ͜ͷͱ͖ɺ఺ R ʹ͸ϦηοτϊΠζ VN2 ͕ɺ఺ S ʹ͸૿෯͞ΕͨిҐ A2 VN2 ͕ՃΘΔɻ͜͜Ͱɺ‫ޙ‬ஈͷίϯύϨʔλͷ૿෯཰Λ A2 ͱͨ͠ɻ(v) RST CDS Λ High ʹ͢Δɻ͜ͷͱ͖ɺCDS Ωϟύγλ‫ޙ‬ஈͷిҐ͸ VCDS ʹͳΔɻComp Cap.1 લ‫ޙ‬ͷిҐ͕ࠩอଘ͞ΕΔͨΊɺ఺ P, Q ͷిҐ͸ͦΕͧΕ V1 + VN1 − Vtr ,V1 + A1 VN1 − A1 Vtr ͱͳΔɻ͜͜ͰɺVtr ≡ Vth − VCDS ͱ͓͍ͨɻॳஈͷిҐͷมԽ͸Comp Cap.2 Λհͯ͠‫ޙ‬ஈʹ఻ΘΓɺ఺ R ͷిҐ͸ V2 + A1 VN2 − A1 Vtr ͱͳΔɻΑͬͯɺ࠷ऴஈͷ఺ S ͷిҐ͸ɺA1 , A2 ͕े෼େ͖͍ͱ͢Δͱɺ
V2 + A2 VN2 − A1 A2 Vtr ∼ −A1 A2 Vtr(3.7)ͱۙࣅͰ͖Δɻ(vi) RST CDS Λ Low ʹͯ͠࿐ޫΛ࢝ΊΔɻX ઢ͕ೖࣹ͢Δͱɺੜ੒͞Εͨ৴߸ిՙ͸ηϯεϊʔυʹऩू͞ΕɺCSA ճ࿏Ͱ൓స૿෯͞Εͨ৴߸ VSIG = ACSA ∆V > 0 ΛಘΔɻ͜ͷͱ͖ɺCDS Ωϟύγλલ‫ޙ‬ͷిҐࠩ͸อଘ͞ΕɺCDS Ωϟύγλ‫ޙ‬ஈʹ΋
VSIG ͕ՃΘΔɻComp Cap.1, Comp Cap.2 ͷલ‫ޙ‬ͷిҐ͕ࠩอଘ͞ΕΔͨΊɺ(v) ͱಉ༷ʹ৴߸͕఻ୡ͞Εɺ఺ S ͷిҐ͸ɺ
V2 + A2 VN2 + A1 A2 (VSIG − Vtr ) ∼ A1 A2 (VSIG − Vtr )(3.8)

ͱͳΔɻVSIG − Vtr > 0 ͷͱ͖ɺίϯύϨʔλͷ࿦ཧ͕൓స͠ɺτϦΨ৴߸͕ग़ྗ͞
ΕΔɻ͕ͨͬͯ͠ɺVtr = Vtr − VCDS ΛτϦΨᮢ஋ిѹͱ͢Ε͹ɺ৴߸Ϩϕϧ͕τϦΨᮢ஋Λ௒͑Δ͔Ͳ͏͔൑ఆ͢Δ͜ͱ͕Ͱ͖Δɻ
τϦΨ৴߸͕ग़ྗ͞ΕΔͱɺηϯα૚ʹ࢒͞Εͨ৴߸ిՙ΋શͯऩूͰ͖ΔΑ͏ʹҰఆ࣌ؒ (STORE OFF TIME) ଴͔ͬͯΒάϩʔόϧγϟολʔ (STORE) Λ OFF ʹ
͢Δɻຊम࢜࿦จͰ͸ɺSTORE OFF TIME ͸ 10 µs ʹ౷Ұ࣮ͯ͠‫ݧ‬Λߦ͏ɻ

3.2.2 XRPIX ͷಡΈग़͠Ϟʔυ
XRPIX ͸ओʹೋͭͷಡΈग़͠ϞʔυΛ࣋ͭɻҰͭ໨͸ɺX ઢ͕ೖࣹͯ͠τϦΨग़ྗͨ͠λΠϛϯάͰɺώοτͨ͠ϐΫηϧΛಡΈग़͢Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͋Δɻઌड़ͷ௨Γɺ< 10 µs ͷ࣌ؒ෼ղೳͱߴ͍εϧʔϓοτ (> 10 kHz) Λ࣮‫͖Ͱݱ‬ΔɻFORCE ͷϝΠϯϞʔυͱͯ͠༻͍ΔͨΊɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ֤छཁ‫ٻ‬Λୡ੒͢΂͘։ൃΛߦͳͬͯ
͍Δɻೋͭ໨͸ɺҰఆ࣌ؒ࿐ޫ‫ࢦʹޙ‬ఆͷϐΫηϧΛಡΈग़͢ϑϨʔϜಡΈग़͠Ͱ͋Δɻ
τϦΨճ࿏Λ༻͍ͳ͍ͨΊɺτϦΨճ࿏ͷϊΠζͷ‫د‬༩Λߟ͑Δඞཁ͕ͳ͘ɺ‫ج‬ຊతͳੑೳධՁʹ༻͍ΔɻҎԼʹͦΕͧΕͷಡΈग़͠ํ๏ͷৄࡉʹ͍ͭͯ঺հ͢Δɻ

CCDS

V2

V2

VCDS

V1
V2
+A1VN1 +VN2
−A1Vtr −A1Vtr

COMP Cap. 1

CCDS V

CDS + VSIG

Vtr = Vth − VCDSVCDS

RST_COMP2V1
V2+A1VN1 +VN2

V2
+A2VN2

Vth

(vi)

V2
+A2VN2−A1A2Vtr

RST_COMP1V1+VN1

RST_COMP1

V1
+VN1
−Vtr
+VSIG

RST_VTH

RST_VTH

RST_COMP2

RST_CDSCOMP Cap. 1

RST_COMP1

V1
+VN1
−Vtr
Vth

Vth
RST_VTH

V1+A1VN1(iv)

RST_COMP2

V2

VthCOMP Cap. 1

COMP Cap. 2

RST_COMP1

RST_COMP2V2

COMP Cap. 2

S

V1

COMP Cap. 2

R

V1

COMP Cap. 1

Q

RST_COMP1

RST_VTHP

Vth

RST_CDS

RST_VTH

RST_CDS

V2

Vth

VCDS

RST_CDS

V2

V1
+VN1

(v)

VCDS

V1

VCDS
COMP Cap. 1

Vth

VCDS

CCDS

CCDS

Vth

(iii)
CCDS

(ii)

RST_COMP2V1

COMP Cap. 2

RST_CDSVCDS

RST_COMP1

RST_CDSVth
RST_VTHCCDS

COMP Cap. 1(i)

SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃCOMP Cap. 2

ୈ3ষ

COMP Cap. 2

38

RST_COMP2V1
V2+A1VN1 +VN2
−A1Vtr −A1Vtr+A1VSIG +A1VSIGV2+A2VN2−A1A2Vtr+A1A2VSIG

Vthਤ 3.10: τϦΨճ࿏ͷಈ࡞ͷྲྀΕɻ֤৔ॴͷిҐΛ৭෇͖Ͱ͍ࣔͯ͠Δɻ

Πϕϯτ‫ۦ‬ಈಡΈग़͠Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ɺ֤ϐΫηϧʹ౥ࡌ͞Ε͍ͯΔτϦΨग़ྗ‫ػ‬ೳΛ༻͍Δɻ·ͣɺΞφϩάճ࿏ͱϐΫηϧτϦΨճ࿏ΛϦηοτ͠ɺ࿐ޫΛ։࢝͢Δɻઃఆͨ͠࿐ޫ࣌ؒ (ຊम࿦Ͱ͸ 1 ms ͱ͍ͯ͠Δ) ಺ʹΠϕϯτ͕ͳ͚Ε͹ɺ҉ిྲྀ༝དྷͷిՙ͕஝ੵ͢ΔͨΊҰ୴ϦηοτΛ͔͚ɺ࿐ޫΛ‫܁‬Γฦ͢ɻ࿐ޫதʹτϦΨग़ྗ͕͋Ε͹ɺҎԼͷྲྀΕʹԊͬͯϐΫηϧ͔ΒΞφϩά৴߸ΛಡΈग़͢ɻ͜ͷಡΈग़͠ͷྲྀΕΛਤ 3.11 Λ༻͍ͯઆ໌͢Δɻ(i) ࿐ޫதʹ X ઢ͕ೖࣹ͠ɺిՙΛൃੜ͢Δɻۭ๡૚தͰൃੜͨ͠ిՙ͸ಡΈग़͠ϊʔυʹूΊΒΕɺϐΫηϧΞφϩάճ࿏Ͱిՙ਺ʹൺྫ͢Δిѹʹม‫͞׵‬ΕΔɻ
(ii) ిѹϨϕϧ͕༧Ίઃఆ͍ͯͨ͠τϦΨᮢ஋ిѹΛ௒͑ΔͱɺτϦΨճ࿏ͷϩδοΫ
͕൓స͠ɺͦͷϐΫηϧͷ࠲ඪ৘ใͰ͋Δ Column ͱ Row ํ޲ʹτϦΨ৴߸͕ग़ྗ͞ΕΔɻ(iii) ֤ϥΠϯͷ OR ͕τϦΨ৴߸ͱͯ͠֎෦ͷ FPGA ʹग़ྗ͞ΕΔɻ
(iv) ৴߸͕ FPGA ʹ఻ΘΔͱɺDAQ ͷ։࢝࣌Λ‫ج‬४ʹͨ࣌͠ࠁͱ࿐ޫ࣌ؒΛͦΕͧΕ‫ه‬࿥͢Δɻ͜ͷͱ͖ɺϚϧνϐΫηϧώοτͳͲͷΠϕϯτύλʔϯ΋‫ه‬࿥͢Δɻ(v) ώοτϐΫηϧͷ࠲ඪ৘ใΛ‫ه‬࿥͢Δɻ

3.2. SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ʮXRPIXʯ39

ਤ 3.11: Πϕϯτ‫ۦ‬ಈಡΈग़͠ͷྲྀΕ [40]ɻ

(vi) FPGA ͰಡΈग़͢Πϕϯτͱ൑ఆͨ͠৔߹ɺಡΈग़͢ϐΫηϧͷΞυϨεΛࢦఆ͠ɺΞφϩά৴߸ΛಡΈग़͢ɻ(vii) ಡΈग़ͨ͠Ξφϩά৴߸Λ֎෦ͷΞφϩά-σδλϧม‫׵‬ճ࿏ (Analog-to-Digital Converter: ADC) Ͱσδλϧม‫͠׵‬ɺFPGA ͷϨδελʹͭΊΔɻ
(viii) σʔλΛΠʔαωοτ‫ܦ‬༝Ͱ PC ΁సૹɾอଘ͢Δɻ
ຊम࢜࿦จͰ͸ɺτϦΨग़ྗͨ͠ϐΫηϧ͚ͩͰͳ͘ɺͦͷपғͷ 8 × 8 ϐΫηϧ͔Β΋ಡΈग़͠Λߦ͏ɻ͜Ε͸ϖσελϧΛࠩ͠Ҿ͖ɺෳ਺ͷϐΫηϧʹ‫ލ‬ΔΠϕϯτ (νϟʔδγΣΞϦϯάΠϕϯτ) Λิਖ਼͢ΔͨΊͰ͋Δɻ͜ͷৄࡉʹ͍ͭͯ͸ 3.2.5 અͰ঺հ͢ΔɻϑϨʔϜಡΈग़͠ϑϨʔϜಡΈग़͠͸ɺτϦΨग़ྗ‫ػ‬ೳΛ༻͍ͣɺҰఆ࣌ؒ࿐ޫͨ͠ͷͪʹࢦఆͨ͠ྖҬΛಡΈग़͢ํ๏Ͱ͋ΔɻϑϨʔϜಡΈग़͠͸ɺτϦΨग़ྗ‫ػ‬ೳ͕௚઀ؔ༩͠ͳ͍‫ج‬ຊతͳੑೳධՁʹ༻͍Δɻ‫ޙ‬ड़ (3.3 અ) ͷΑ͏ʹɺτϦΨग़ྗ‫ػ‬ೳ͕Ξφϩά৴߸ʹӨ‫͢ڹ‬Δͳ
Ͳɺૉࢠຊདྷͷੑೳͷ֬ೝ͕೉͍͠৔߹͕͋ΔͨΊͰ͋Δɻ࣮ࡍͷΦϖϨʔγϣϯͰ͸ɺτϦΨճ࿏ͷϩδοΫ͕൓స͠ͳ͍Α͏ʹɺτϦΨᮢ஋ిѹΛߴ͘ઃఆ͍ͯ͠Δɻ·ͨɺຊम࢜࿦จͰ͸ಛʹஅΓͷͳ͍‫ݶ‬Γ 1 ms ͷ࿐ޫ࣌ؒͰ࣮‫ݧ‬Λߦ͏ɻ

3.2.3 σʔλऔಘγεςϜXRPIX ͷಈ࡞੍‫֎ͱޚ‬෦΁ͷσʔλग़ྗͷͨΊʹɺಡΈग़͠ϘʔυΛ༻͍͍ͯΔɻಡΈग़͠Ϙʔυ͸ɺૉࢠʹΑΒͳ͍‫ڞ‬௨ͷϝΠϯϘʔυͰ͋Δ SEABAS (Soi EvAluation BoArd

40

ୈ3ষ

SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃ

with Sitcp) Ϙʔυ [41] ͱɺૉࢠʹ߹Θͤͯઃ‫ͨ͠ܭ‬αϒϘʔυͷ 2 ͔ͭΒߏ੒͞ΕΔ (ਤ
3.12)ɻSEABAS Ϙʔυ͸ɺૉࢠ੍‫༻ޚ‬ͷ User FPGA ͱΠʔαωοτΛհͨ͠σʔλసૹ༻ͷ
SiTCP FPGA Λ౥ࡌ͍ͯ͠ΔɻUser FPGA ͷϑΝʔϜ΢ΣΞΛॻ͖‫͑׵‬Δ͜ͱͰɺ༻͍
Δૉࢠͷ࢓༷ʹ߹Θͤͯσδλϧճ࿏Λ૊Έସ͑Δ͜ͱ͕Ͱ͖ΔɻSiTCP FPGA ͸ɺUser
FPGA ͔Βग़ྗ͞ΕΔ৴߸ΛɺΠʔαωοτͰసૹͰ͖Δ‫͑׵͖ॻʹࣜܗ‬Δ΋ͷͰ͋ΔɻಡΈग़͠Ϙʔυͱ PC Λ LAN έʔϒϧͰ઀ଓ͢Δ͜ͱͰɺσʔλͷૹड৴Λߦ͏ɻ
SEABAS Ϙʔυʹ͸ DAC ͕ɺαϒϘʔυʹ͸ ADC ͕౥ࡌ͞Ε͍ͯΔɻDAC ͷ෼ղೳ͸
3.3 V/12 bit Ͱ͋ΓɺૉࢠʹඞཁͳిѹΛ‫͍ͯ͠څڙ‬ΔɻADC ͸ 1 ADU (Analog to Digital
Unit) ͋ͨΓ 488 µV ʹ૬౰͢Δ 2 V/12 bit ͷ෼ղೳΛ΋ͭɻADC ͷલஈʹ͸ɺ௿ϊΠζΞϯϓ INA103[42] Λ౥ࡌ͍ͯ͠ΔɻINA103 ͷ૿෯཰͸࣮ଌ͞Ε͓ͯΓɺͦͷ஋͸ 1.8 Ͱ͋
Δ [46]ɻ
PC ଆͰ͸ɺROOT ϥΠϒϥϦ (C++) Λ༻͍ͯ։ൃͨ͠ DAQ (Data AcQuisition system)
Software Λ࢖༻͠ɺσʔλͷ΍ΓऔΓΛߦ͏ɻ࿐ޫ࣌ؒ΍औಘϑϨʔϜ/Πϕϯτ਺ɺτϦΨᮢ஋ిѹͳͲͷ֤छύϥϝʔλΛಡΈग़͠ϘʔυʹૹΔ໾ׂͱɺड৴ͨ͠σʔλΛอଘ͢Δ໾ׂΛ୲͏ɻ
SEABAS Board
Sub Board

XRPIX
設置箇所

ਤ 3.12: XRPIX ͷಡΈग़͠ϘʔυɻSEABAS ϘʔυͱαϒϘʔυ͔Βߏ੒͞ΕΔɻ

3.2.4 ϖσελϧิਖ਼ͱϊΠζআ‫ڈ‬
ਤ 3.13(a) ʹࣔ͢Α͏ʹɺXRPIX ͸ X ઢೖࣹͷ༗ແʹؔΘΒͣɺ Ξφϩάճ࿏ɺपล
ճ࿏ɺಡΈग़͠Ϙʔυʹ౥ࡌ͞Ε͍ͯΔճ࿏ͷग़ྗΛ൓өͯ͠Ұఆͷ೾ߴ஋Λग़ྗ͢Δɻ͜ΕΛʮϖσελϧʯͱ‫Ϳݺ‬ɻX ઢͷΤωϧΪʔʹରԠ͢Δ೾ߴ஋Λ‫ٻ‬ΊΔ৔߹͸ɺϖσελϧ஋ͱࠩ෼ΛऔΔඞཁ͕͋Δɻ
·ͨɺϖσελϧʹ͸γεςϜશମͷϊΠζ͕‫·ؚ‬Ε͍ͯΔɻ‫ݸ‬ʑͷϐΫηϧͷϊΠ
ζ͸ɺϐΫηϧຖʹҟͳΔϊΠζ੒෼ͱɺશͯͷϐΫηϧʹ‫ڞ‬௨ͷϊΠζ੒෼ʹ෼ྨͰ
͖Δɻղੳ্Ͱ͜ΕΒͷϊΠζΛআ‫͖Ͱڈ‬Ε͹ɺΑΓ௿ϊΠζͳ X ઢεϖΫτϧ͕ಘΒ
ΕΔɻ

3.2. SOI ϐΫηϧ‫ݕ‬ग़‫ث‬ʮXRPIXʯ

41ϑϨʔϜಡΈग़͠ͱΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ϖσελϧͷධՁํ๏͕ҟͳΓɺͦΕͧΕॱʹઆ໌͢Δɻ
(b)
7

10

1380

1390

Raw Pedestal
Corrected
Pedestal

10
7

104
1000

X-ray

10

1375

1400

1425

1450

1475

1500

0

2.
5×
10
6

100

1410

7.
5×
10
6

Counts/bin

105

1400

5×
10
6

Counts/bin

1370

Raw Pedestal

106

1
1350

Raw Pulse Height [ADU]

1.
25
×1
07

(a)

Raw Pulse Height [ADU]

−20

−10

0

10

20

Corrected Pulse Height [ADU]ਤ 3.13: ϑϨʔϜಡΈग़͠Ͱऔಘͨ͠ (a) ੜσʔλɺ(b) ϖσελϧิਖ਼લ‫ޙ‬ͷώετά
ϥϜɻϑϨʔϜಡΈग़͠ʹ͓͚Δϖσελϧิਖ਼ϑϨʔϜಡΈग़͠ʹ͓͚Δϖσελϧิਖ਼Ͱ͸ɺϐΫηϧຖʹҟͳΔϊΠζ੒෼‫ͼٴ‬શͯͷϐΫηϧʹ‫ڞ‬௨ͷϊΠζ੒෼૒ํΛ௿‫͢ݮ‬Δɻͦͷखॱʹ͍ͭͯɺҎԼʹड़΂Δɻ
·ͣɺϑϨʔϜ͝ͱʹҟͳΔ͕ɺશͯͷϐΫηϧʹ‫ڞ‬௨ͷίϞϯϞʔυϊΠζΛ࣍ࣜͰআ‫͢ڈ‬Δɻ
PHcom ( f ; i, j) = PHraw ( f ; i, j) − PHmedian ( f )(3.9)

͜͜ͰɺPHraw ͸ϐΫηϧͷੜ೾ߴ஋ɺPHmedian ͸ಡΈग़ͨ͠શϐΫηϧͷੜ೾ߴ஋ͷதԝ஋Ͱ͋Δɻ·ͨɺi, j ͸ͦΕͧΕ ColumnɺRaw ͷΞυϨεɺ f ͸ϑϨʔϜ൪߸Λද͢ɻ্ࣜͰ‫ٻ‬Ίͨ PHcom ( f ; i, j) Λ༻͍ͯɺ࠷ऴతͳϖσελϧิਖ਼͸࣍ࣜͰߦ͏ɻ
f +50
1 4
PHcorrect ( f ; i, j) = PHcom ( f ; i, j) −PHcom ( f ′ ; i, j)
101 f ′ = f −50(3.10)f ൪໨ͷϑϨʔϜʹରͯ͠ɺϐΫηϧຖʹલ‫ ޙ‬50 ϑϨʔϜͷฏ‫ۉ‬஋Λ‫ٻ‬Ίɺͦͷ஋Λࠩ͠Ҿ͘͜ͱͰϖσελϧΛิਖ਼͍ͯ͠Δɻલ‫ ޙ‬50 ϑϨʔϜͷฏ‫ۉ‬ΛͱΔ͜ͱͰɺप‫ظ‬తʹ͢ΔϊΠζ੒෼Λଧͪফ͢͜ͱ͕Ͱ͖Δɻ·ͨɺϐΫηϧ͝ͱʹิਖ਼͢Δ͜ͱͰɺϖσελϧͷΦϑηοτͷ‫ݸ‬ੑ΋ଧͪফ͍ͯ͠Δɻ࣮ࡍʹਤ 3.13(b) ʹࣔ͢Α͏ʹɺϖσελϧิਖ਼Λߦ͏͜ͱͰɺಉ࣌ʹϊΠζ΋আ‫Ͱڈ‬
͖͍ͯΔ͜ͱ͕֬ೝͰ͖Δɻ͜ͷิਖ਼ΛߦͳͬͨϖσελϧͷϐʔΫ෯͸ɺʮಡΈग़͠ϊΠζʯͱʮ҉ిྲྀϊΠζʯΛ௚ʹ൓өͨ͠΋ͷΛ͍ࣔͯ͠Δͱߟ͑ΒΕΔɻಡΈग़͠ϊΠζͱ҉ిྲྀϊΠζͷ૯࿨ͱͯ͠ɺϖσελϧΛΨ΢γΞϯͰϑΟοτͨ͠ͱ͖ͷඪ४ภࠩΛ σped ͱఆٛ͢Δɻͳ͓ɺे෼ྫྷ٫ͯ͠҉ిྲྀϊΠζ͕ಡΈग़͠ϊΠζʹൺ΂ͯແࢹͰ
͖Δ৔߹͸ɺ͜ͷඪ४ภࠩ σped ΛಡΈग़͠ϊΠζͱΈͳ͢ɻ

42

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SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃΠϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δϖσελϧิਖ਼Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ɺτϦΨग़ྗͨ͠ϐΫηϧΛத৺ʹͨ͠ 8 × 8 ϐΫηϧ͔͠ಡΈग़͞ͳ͍ɻͦͷͨΊɺΠϕϯτ͝ͱʹಡΈग़͢ྖҬ͕ҟͳΓɺϑϨʔϜಡΈग़͠ͷΑ͏ͳख๏Ͱϖσελϧิਖ਼Λߦ͏͜ͱ͕Ͱ͖ͳ͍ɻͦ͜ͰɺΠϕϯτ͝ͱʹੜ೾ߴ஋ͷதԝ஋ΛͱΓɺͦͷ஋Λϖσελϧͱͯ͠࠾༻͢Δɻ۩ମతʹ͸ɺ࣍ࣜͷΑ͏ʹϖσελϧ
ิਖ਼Λߦ͏ɻ
PHcorrect ( f ; i, j) = PHraw ( f ; i, j) − PHmedian ( f )(3.11)
͜ͷख๏ʹ͓͍ͯ͸Πϕϯτ͝ͱͷίϞϯϞʔυϊΠζ͸আ‫͖Ͱڈ‬Δ͕ɺϑϨʔϜಡΈग़͠ͷϖσελϧิਖ਼Ͱআ‫͍͖ͨͯͰڈ‬ɺϐΫηϧ‫ݸ‬ੑͱϥϯμϜͳϊΠζ੒෼͸ิਖ਼Ͱ͖͍ͯͳ͍ɻΠϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δղੳख๏ͷվળ͸ࠓ‫͏ߦޙ‬ඞཁ͕͋Δɻ

3.2.5 ΠϕϯτࣝผXRPIX ͷΑ͏ͳϐΫηϧߏ଄Λ࣋ͭ X ઢΠϝʔδηϯαʔͰ͸ɺۭ๡૚தͰൃੜͨ͠
ిՙӢ͕ಡΈग़͠ϊʔυʹ޲͔ͬͯυϦϑτ͞ΕΔ·Ͱʹɺ೤֦ࢄʹΑΓෳ਺ͷϐΫηϧ
ʹΘͨͬͯ޿͕ͬͯ͠·͏৔߹͕͋Δɻ͜ͷΑ͏ͳΠϕϯτΛνϟʔδγΣΞϦϯάΠϕ
ϯτͱ‫Ϳݺ‬ɻXRPIX Ͱ͸ҎԼʹࣔ͢खॱͰෳ਺ϐΫηϧͷ೾ߴ஋Λղੳ্Ͱ଍͠߹Θ͍ͤͯΔɻ(i) Πϕϯτநग़͋ΔϐΫηϧͷ೾ߴ஋͕ྡΓ߹͏ 8 ϐΫηϧͷ೾ߴ஋ΑΓ΋ߴ͘ɺ͔ͭɺ͋Β͔͡Ίઃఆͨ͠Πϕϯτᮢ஋Λ௒͍͑ͯͨ৔߹ɺΠϕϯτத৺ͱ൑ఆ͢Δɻ͜͜ͰɺΠϕϯτᮢ஋͸ಛʹ‫ه‬ड़ͷͳ͍৔߹ɺ10σped ʹઃఆ͢Δɻ(ii) γϯάϧϐΫηϧΠϕϯτͷ൑ఆΠϕϯτத৺ͱྡΓ߹͏্Լࠨӈ 4 ϐΫηϧͷ೾ߴ஋͕ɺ͍ͣΕ΋εϓϦοτᮢ஋Λӽ͑ͳ͍৔߹ɺిՙӢ͕୯ҰϐΫηϧʹऩ·ͬͨͱͯ͠ɺγϯάϧϐΫηϧΠϕ
ϯτͱ൑ఆ͢Δɻ͜͜ͰɺεϓϦοτᮢ஋͸ಛʹ‫ه‬ड़ͷͳ͍৔߹ɺ3σped ʹઃఆ͢Δɻ(iii) μϒϧϐΫηϧΠϕϯτͷ൑ఆΠϕϯτத৺ͱྡΓ߹͏্Լࠨӈ 4 ϐΫηϧͷ೾ߴ஋ͷ͏ͪɺ͍ͣΕ͔ 1 ϐΫηϧͷΈεϓϦοτᮢ஋Λӽ͑ͨ৔߹ɺ2 ϐΫηϧʹిՙӢ͕޿͕ͬͨͱͯ͠ɺμϒϧϐΫηϧΠϕϯτͱ൑ఆ͢Δɻ͜ͷͱ͖ɺᮢ஋Λ௒͑ͨ 2 ϐΫηϧͷ೾ߴ஋Λ଍͠߹ΘͤͯɺμϒϧϐΫηϧΠϕϯτͷ೾ߴ஋ͱ͢Δɻ(iv) ͦͷଞͷΠϕϯτ൑ఆਤ 3.14(iv) ͷΑ͏ͳ 3,4 ϐΫηϧͳͲʹ·͕ͨΔΠϕϯτΛͦͷଞͷΠϕϯτͱ൑ఆ͢Δɻ·ͨɺͦͷଞͷΠϕϯτʹ‫·ؚ‬Εͳ͍Α͏ͳ഑ஔύλʔϯ͸ɺඇ X ઢΠϕϯτͱ൑ఆ͢ΔɻҎ্ͷ෼ྨʹ͓͍ͯɺγϯάϧϐΫηϧΠϕϯτɺμϒϧϐΫηϧΠϕϯτͳͲͷ X ઢΠϕϯτͱ൑ఆ͞Εͨ΋ͷΛ߹ࢉͯ͠ɺʮશ X ઢΠϕϯτʯͱ‫͢ʹͱ͜Ϳݺ‬Δɻ

3.3. ैདྷͷߏ଄Λ࣋ͭ XRPIX ͷೈ X ઢੑೳͱ՝୊

イベント閾値を超え、かつ周囲 8 ピクセル
よりも波高値が大きいピクセル

43(i) イベント中心の判定

スプリット閾値を超え、かつイベント中心
ピクセルと波高値を足し合わせるピクセル

周囲のピクセルの波高値分布に応じて場合分けetc.
(ii) シングルピクセルイベント(iii) ダブルピクセルイベント(iv) その他のイベント

ਤ 3.14: Πϕϯτ൑ఆͷΠϝʔδਤɻ

˙ 3.3

ैདྷͷߏ଄Λ࣋ͭ XRPIX ͷೈ X ઢੑೳͱ՝
୊͜Ε·Ͱɺਤ 3.1 ʹࣔ͢Α͏ͳηϯεϊʔυͱͦͷपΓʹ‫ܗ‬੒ͨ͠ BNW4 ͔Βߏ੒͞Ε
Δ୯७ͳߏ଄ (Ҏ߱ɺSingle SOI ߏ଄ͱ‫ )Ϳݺ‬Λ΋ͭ XRPIX ͰɺBNW ͷαΠζ࠷దԽ΍ಡΈग़͠ճ࿏ͷվྑΛॏͶ͖ͯͨɻSingle SOI ߏ଄Λ࣋ͭ XRPIX ʹ͓͚Δୡ੒ঢ়‫گ‬Λද
3.1 ࣔ͢ɻ͜Ε·Ͱͷ‫ڀݚ‬੒ՌʹΑΓɺணʑͱཁ‫ٻ‬Λୡ੒͖ͯͨ͠ɻ
ද 3.1: FORCE ͷཁ‫ٻ‬ੑೳͱ SingleSOI ߏ଄Λ΋ͭ XRPIX Ͱୡ੒͍ͯ͠Δੑೳͷൺֱɻ
ୡ੒߲໨
࣌ؒ෼ղೳ
ϐΫηϧαΠζΠϝʔδϯάΤϦΞ
෼ޫੑೳཪ໘ෆ‫ײ‬૚ް‫ݕ‬ग़Մೳͳ࠷௿ΤωϧΪʔ

FORCE ཁ‫ٻ‬ੑೳ
10 µs
200 µm
20 mm × 20 mm
300 eV in FWHM at 6 keV
1 µm
1 keV

Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱୡ੒ͨ͠ੑೳ

< 10 µs (XRPIX5b)
36 µm (XRPIX5b)
21.9 mm × 13.8 mm × 2 ຕ (XRPIX5b)
1300 eV in FWHM at 14 keV (XRPIX3b)
0.9–1 µm (XRPIX2b)–

ೈ X ઢੑೳʹ͍ͭͯ΋ɺෳ਺ͷઌߦ‫Ͱڀݚ‬ධՁ͕ߦΘΕ͖ͯͨɻೈ X ઢੑೳΛܾΊΔ
4n ‫ܕ‬ͷηϯα૚ͷ৔߹͸ BPW Ͱ͋Δɻ

44

ୈ3ষ

SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃॏཁͳύϥϝʔλ͸ɺೖࣹ໘ͷෆ‫ײ‬૚ްͰ͋ΔɻXRPIX Ͱ͸ɺೈ X ઢΛճ࿏૚ͷ͋Δද
໘ଆ͔Βরࣹ͢Δͱɺηϯα૚·Ͱಧ͘લʹ‫ٵ‬ऩ͞Εͯ͠·͏ͨΊɺೈ X ઢ͸ճ࿏૚ͷͳ͍ཪ໘ଆ͔Βরࣹ͢Δɻཪ໘ʹ͸όοΫόΠΞεిѹΛҹՃ͢ΔͨΊͷബ͍ి‫ۃ‬૚͕ଘࡏ͠ɺ͕ͦ͜ෆ‫ײ‬૚ʹͳΔɻೈ X ઢ‫౓ײ‬ΛߴΊΔͨΊɺཪ໘ෆ‫ײ‬૚ްͷബ͍ૉࢠ։ൃΛ
ߦ͍ɺItou et al. (2016)[43] Ͱͦͷ‫ݕ‬ग़ޮ཰ͱཪ໘ෆ‫ײ‬૚ްͷධՁΛߦͳͬͨɻXRPIX2b
Ͱऔಘͨ͠ɺ‫ݕ‬ग़ޮ཰ͷΤωϧΪʔґଘੑΛਤ 3.15 ʹࣔ͢ɻ‫ݕ‬ग़ޮ཰͕ɺೖࣹ X ઢͷෆ‫ײ‬૚ްʹΑΔ‫ٵ‬ऩͱۭ๡૚ (ް͞ 62 µm) ͷಁաʹΑΓܾ·Δͱͨ࣌͠ͷ࣮ޮతͳཪ໘ෆ
‫ײ‬૚ް͸ɺ0.9–1.0 µm Ͱ͋Δ͜ͱ͕Θ͔ͬͨɻ͜Ε͸ཪ໘ͷՄࢹޫःޫ༻ Al ບ (0.2 µm)Λ‫ؚ‬Ίͨ஋Ͱ͋ΓɺFORCE ͷཁ‫ٻ‬ΛॳΊͯຬͨͨ݁͠ՌͰ͋Δɻෆ‫ײ‬૚ްͷཁ‫ٻ‬Λୡ੒ͨ͠ҰํͰɺSingle SOI ߏ଄Λ΋͍ͭͣΕͷૉࢠʹ͓͍ͯ΋ɺ‫ݱ‬
ঢ় 1 keV ҎԼͷ X ઢΛ‫ݕ‬ग़Ͱ͖͍ͯͳ͍ɻ‫ݱ‬ঢ়‫ݕ‬ग़Ͱ͖͍ͯΔ࠷΋௿ΤωϧΪʔͷ X ઢ͸ɺXRPIX3b Ͱͷ 2.1 keV Ͱ͋Δ [44]ɻ·ͨɺ͜Ε·Ͱͷೈ X ઢੑೳධՁ͸͍ͣΕ΋ϑϨʔϜಡΈग़͠ͰߦΘΕͨ΋ͷͰ͋ΔɻFORCE ͷϝΠϯϞʔυͰ͋ΔΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ɺ‫ޙ‬ड़͢Δ෼ޫੑೳͷஶ͍͠ྼԽʹΑΓɺධՁ͸ߦΘΕ͍ͯͳ͍ɻ༷ʑͳઌߦ‫ݚ‬‫[ ڀ‬45, 47, 48] ʹΑΓɺSingle SOI ͷηϯαߏ଄ʹؔ࿈͢Δෳ਺ͷ໰୊͕ೈ X ઢͷ‫ݕ‬ग़Λ๦͍͛ͯΔ͜ͱ͕Θ͔ͬͨɻҎԼʹैདྷͷߏ଄༝དྷͷ໰୊ͷৄࡉʹ͍ͭͯɺਤ 3.16 Λަ͑ͯ঺հ͢Δɻਤ 3.15: XRPIX2b Ͱऔಘͨ͠‫ݕ‬ग़ޮ཰ͷ X ઢΤωϧΪʔґଘੑ [43]ɻσʔλ఺ͷ৭ͷҧ͍͸ҹՃͨ͠όοΫόΠΞεిѹͷҧ͍Λ͍ࣔͯ͠Δɻ

ηϯα૚ͱճ࿏૚ͷ‫ׯ‬বैདྷͷߏ଄ (Single SOI) Λ࠾༻͍ͯ͠Δ XRPIX ͷதͰ࠷΋ྑ͍෼ޫੑೳΛୡ੒ͨ͠XRPIX3b Ͱऔಘͨ͠εϖΫτϧΛਤ 3.17 ʹࣔ͢ɻϑϨʔϜಡΈग़͠Ͱ͸ 14 keV Ͱ 400 eV(FWHM) ͱ͍͏ྺ୅࠷ߴͷΤωϧΪʔ෼ղೳΛୡ੒͕ͨ͠ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ஶ͘͠෼ޫੑೳ͕ѱԽ͢Δɻ͜Ε͸ɺਤ 3.16a ʹࣔ͢Α͏ʹηϯεϊʔυͱσδλϧճ࿏͕ి‫ؾ‬తʹ‫ׯ‬ব͠ɺΞφϩά৴߸ʹӨ‫͢ڹ‬Δ͜ͱ͕‫ݪ‬ҼͰ͋Δͱ໌Β͔ʹ͞Εͨ [45]ɻ

3.3. ैདྷͷߏ଄Λ࣋ͭ XRPIX ͷೈ X ઢੑೳͱ՝୊

45

CSA

Vout

Feedback Cap.
デジタル回路b.寄生容量Circuit Layer
MOSFET

SiO2

Sense nodea.電気的干渉e− e− e− e−c.電荷損失p-

Si Sensor Layerਤ 3.16: ैདྷͷߏ଄ (Single SOI) ʹؔ࿈͢Δ໰୊ͷΠϝʔδਤɻ

フレーム読み出し(a)200

13.9 keV(b)
1500

イベント駆動読み出し
13.9 keV

241Am

241Am

1250

ΔE = 400 eV(FWHM)

1000

Counts/bin

Counts/bin

150

100

17.8 keV

ΔE = 1340 eV(FWHM)

750

17.8 keV

500
50
250

0
0

100

200

300

400

Pulse Height [ADU]

500

600

0
900

1000

1100

1200

1300

1400

1500

Pulse Height [ADU]ਤ 3.17: XRPIX3b Ͱऔಘͨ͠ 241 Am ͷ εϖΫτϧɻ(a) ϑϨʔϜಡΈग़͠Ͱऔಘɺ(b) Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠εϖΫτϧΛ͍ࣔͯ͠Δ ([46] Λ‫࡞ʹݩ‬੒)ɻ

46

ୈ3ষ

SOI ϐΫηϧ‫ݕ‬ग़‫ ث‬XRPIX ͷ։ൃ‫د‬ੜ༰ྔʹΑΔಡΈग़͠ϊΠζͷ૿Ճ

1250

Pulse Height [ADU]1000

XRPIX6H(Expected)
46.5 µV/e-

750

500

XRPIX6H(Single SOI)
19.6 µV/e-

250

0
0

5

10

15

20

25

Energy [keV]ਤ 3.18: ੨৭ɿैདྷͷߏ଄ (Single SOI) Λ࣋ͭ XRPIX6H Ͱऔಘͨ͠೾ߴ஋ͱ X ઢΤωϧΪʔͷؔ܎ ([47] Λ‫࡞ʹݩ‬੒)ɻ੺৭ɿճ࿏্ͷϑΟʔυόοΫΩϟύγλͷ஋͔Β༧૝͞ΕΔΤωϧΪʔֱਖ਼௚ઢɻ

Single SOI ߏ଄Λ࣋ͭ XRPIX6H ͷΤωϧΪʔֱਖ਼௚ઢΛਤ 3.18 ʹࣔ͢ɻઃ‫ ͨ͠ܭ‬CSA
ͷϑΟʔυόοΫΩϟύγλ༰ྔ͔Βࣜ 3.5 Λ༻͍ͯ૝ఆ͞ΕΔήΠϯ͸ 46.5 µV/e− Ͱ͋Δͷʹର͠ɺ࣮ଌ஋͸ 19.6 µV/e− ͱখ͍͞ɻ͜ͷཧ༝͸ɺਤ 3.16b ʹࣔ͢Α͏ʹϑΟʔυόοΫΩϟύγλͱฒྻͳ‫د‬ੜ༰ྔ͕ଘࡏ͢ΔͨΊͰ͋ΔɻTakeda et al. (2020)[47] Ͱ࣮ޮతͳϑΟʔυόοΫΩϟύγλ͸ 5.4 fF Ͱ͋Δͱ‫ٻ‬ΊΒΕɺճ࿏্ͷϑΟʔυόοΫΩϟύγλ (2.3 fF) ʹՃ͑ͯ 3.1 fF ͷ‫د‬ੜ༰ྔ͕͋Δ͜ͱ͕൑໌ͨ͠ɻ
Single SOI Ͱ͸ɺ‫د‬ੜ༰ྔ͕ແࢹͰ͖ͣɺ૝ఆ͢ΔήΠϯ͕ಘΒΕͳ͔ͬͨɻॳஈͷήΠϯ͕ಡΈग़͠ϊΠζͱ൓૬ؔ͢ΔͨΊ (3.2.1 અ)ɺ͜Ε͸ಡΈग़͠ϊΠζͷ૿େΛট͘ɻͦͷ݁Ռɺೈ X ઢ༝དྷͷখ͍͞೾ߴ஋͸ϊΠζʹຒ΋Εͯ͠·͍ɺ‫ݕ‬ग़ՄೳͳΤωϧΪʔᮢ஋͸ΑΓߴΤωϧΪʔଆʹγϑτͯ͠͠·͏ɻ࣮ࡍɺItou et al. (2016)[43] Ͱೈ X ઢੑೳධՁΛߦͳͬͨ XRPIX2b ͷಡΈग़͠ϊΠζ͸ σped = 61 e− ͱඇৗʹେ͖͘5 ɺΠϕϯτᮢ஋Λ 6σped ͱͯ͠΋ 1.3 keV ૬౰ʹͳΓɺ1 keV ͸‫ݕ‬ग़Ͱ͖ͳ͍ɻ5

XRPIX2b Ͱ͸ॳஈʹιʔεϑΥϩΞճ࿏Λ࠾༻͍ͯ͠Δɻೖྗஈͱ GND ؒͷ‫د‬ੜ༰ྔͰ͋Δηϯα༰ྔ͕ࢧ഑తͰɺେ͖ͳిѹརಘΛಘΒΕͳ͔ͬͨͨΊɺಡΈग़͠ϊΠζ͕େ͖͘ͳͬͨͱߟ͑ΒΕΔɻ

3.3. ैདྷͷߏ଄Λ࣋ͭ XRPIX ͷೈ X ઢੑೳͱ՝୊

47

ϐΫηϧ‫ڥ‬ք෇ۙͰͷిՙଛࣦैདྷͷߏ଄Ͱ͸ɺϐΫηϧ಺෦Ͱͷ෼ޫੑೳͷஶ͍͠ඇҰ༷ੑ͕໰୊Ͱ͋ͬͨɻSPring-8
ͷ X ઢϏʔϜ࣮‫Ͱݧ‬औಘͨ͠ɺैདྷͷߏ଄Λ΋ͭ XRPIX1 ͷϐΫηϧதԝ෇ۙͱϐΫηϧ‫ڥ‬ք෇ۙͷεϖΫτϧΛਤ 3.19 ʹࣔ͢ [48]ɻಉ͡ϐΫηϧͰ΋ɺϐΫηϧ‫ڥ‬ք෇ۙͰ෼
ޫੑೳ͕ஶ͘͠ྼԽ͓ͯ͠ΓɺຊདྷͷًઢΑΓ΋௿͍೾ߴ஋Λ͍ࣔͯ͠Δ͜ͱ͕Θ͔Δɻ͜ͷΑ͏ʹɺεϖΫτϧ͕௿ΤωϧΪʔଆʹ޿͕Δߏ଄͕͋ΒΘΕΔͱɺೈ X ઢεϖΫτϧ͕ߴΤωϧΪʔଆͷεϖΫτϧʹຒ΋Ε΍͘͢ͳΔͨΊɺೈ X ઢͷ‫ݕ‬ग़͕ࠔ೉ʹͳΔɻ
ͦ͜Ͱɺηϯα૚಺ͷి৔γϛϡϨʔγϣϯΛߦ͍‫݁ͨ͠ূݕ‬Ռɺηϯα૚ͱճ࿏ૉࢠͱ
ͷి৔‫ׯ‬বɺ͓Αͼηϯα૚ͱઈԑ૚ͷք໘Ͱͷిՙั֫ʹ‫ى‬Ҽͨ͠ిՙଛࣦ (ਤ 3.16c)͕‫ݪ‬ҼͰ͋Δ͜ͱ͕Θ͔ͬͨɻ
(a)

(b)

ਤ 3.19: SPring-8 X ઢϏʔϜরࣹࢼ‫Ͱݧ‬औಘͨ͠ɺ(a) ϐΫηϧத৺෦෇ۙɺ(b) ϐΫηϧ‫ڥ‬ք෦෇ۙ Ͱ 8 keV ͷ X ઢ͕‫ٵ‬ऩ͞Εͨ৔߹ͷεϖΫτϧ [48]ɻ੺ઢ͸γϯάϧϐΫη
ϧΠϕϯτɺ੨ഁઢ͸μϒϧϐΫηϧΠϕϯτͷεϖΫτϧΛࣔ͢ɻैདྷͷηϯαߏ଄Ͱ͋Δ Single SOI Ͱ͸ɺFORCE ͷཁ‫ٻ‬Λୡ੒͠͏Δੑೳ͕ಘΒΕͳ͔ͬͨɻ͔͠͠ɺ༷ʑͳ‫͔఺؍‬ΒධՁΛਪ͠ਐΊͨ‫ڀݚ‬ͷ੒Ռͱͯ͠ɺʮηϯα૚ͱճ࿏૚ͷి‫ؾ‬తͳ‫ׯ‬বɺ΋͘͠͸ηϯα૚ͱઈԑ૚ͷք໘ʯ͕໰୊Ͱ͋Δͱ͍͏ख͕͔ΓΛ௫Ίͨɻ͜ΕΛղܾ͢ΔͨΊʹඞཁͳͷ͸ɺʮηϯα૚ͱճ࿏૚ɾઈԑ૚Λి‫ؾ‬తʹ෼཭͢
Δʯ͜ͱͰ͋Δɻ

48

ୈ 4 ষ PDD ߏ଄Λಋೖͨ͠ϓϩτλΠϓXRPIX6E
ैདྷͷ Single SOI ߏ଄Λ࣋ͭ XRPIX Ͱ͸ɺճ࿏૚ͱηϯα૚ɺઈԑ૚ͱηϯα૚ؒͷ‫ׯ‬ব͕‫ݪ‬ҼͰɺੑೳ͕ѱԽ͍ͯͨ͠ɻͦ͜Ͱɺզʑ͸‫ڞ‬ಉ‫͠ྗڠͱऀڀݚ‬ɺ৽ͨʹ Pinned
Depleted Diode (PDD) ߏ଄ [49] Λ࣋ͭૉࢠΛ։ൃͨ͠ɻPDD ߏ଄ͷಋೖʹΑΓɺैདྷͷ
XRPIX ʹ͓͚Δෳ਺ͷ໰୊Λಉ࣌ʹղܾ͢Δ͜ͱ͕‫ظ‬଴Ͱ͖ΔɻຊষͰ͸ɺPDD ߏ଄ͷ֓ཁͱͦͷϝϦοτɺPDD ߏ଄Λಋೖͨ͠ϓϩτλΠϓʮXRPIX6Eʯʹ͍ͭͯ঺հ͢Δɻ˙ 4.1

Pinned Depleted Diode (PDD) ߏ଄

PDD ߏ଄͸ɺSOIPIX ͷ‫ج‬ຊతͳϝϦοτΛҡ࣋ͭͭ͠ɺैདྷͷ XRPIX ΑΓ΋ੑೳΛ޲্ͤ͞ΔͨΊʹ৽ͨʹ։ൃͨ͠ߏ଄Ͱ͋Δɻਤ 4.1 ʹ‫ج‬ຊతͳ PDD ߏ଄ͷஅ໘ਤΛࣔ͢ɻैདྷͷ Single SOI ߏ଄ͱൺֱ͢ΔͱɺSi/SiO2 ք໘ʹߴೱ౓ͷ BPW Λ֊ஈঢ়ʹ‫ܗ‬੒͠ɺͦͷ௚Լʹ BNW Λ૊ΈࠐΜͩߏ଄Ͱ͋Δɻ͜ΕʹΑΓɺҎԼʹ‫͛ڍ‬ΔΑ͏ͳੑೳ޲
্͕‫ظ‬଴/֬ೝ͞Ε͍ͯΔɻ(a) Single SOI(b) Pinned Depleted Diode

CSA

CSA

Feedback Cap.

Vout

Feedback Cap.

Vout
VBPW

Circuit Layer
SiO2

寄生容量

MOSFET

電気的干渉
Si Sensor Layerp+

Circuit Layer
SiO2

Sense node (n+)

e− e− e−
電荷損失p-

Si Sensor Layer

Buried n-well(BNW)

Buried p-well
(BPW)

固
定
電
位
層

ਤ 4.1: (a)Single SOI ߏ଄ͱ (b)Pinned Depleted Diode (PDD) ߏ଄ͷൺֱɻηϯα૚ͱճ࿏૚ͷ‫ׯ‬বͷ཈੍ैདྷͷ Single SOI ߏ଄Ͱ͸ɺηϯεϊʔυͱճ࿏૚ؒͷ༰ྔ݁߹͕໰୊ʹͳ͍ͬͯͨɻ
PDD ߏ଄Ͱ͸ɺηϯα૚ͱઈԑ૚ͷք໘ʹ֖Λ͢ΔΑ͏ʹ‫ܗ‬੒ͨ͠ BPW ͕ηϯα૚ͱճ࿏૚ؒͷ‫ׯ‬বΛ཈੍͢Δ໾ׂΛ୲͍ͬͯΔɻBPW ͸‫ج‬൘ೱ౓ʹൺ΂ͯߴೱ౓Ͱ͋ΔͨΊɺ

4.1. Pinned Depleted Diode (PDD) ߏ଄

49ۭ๡ԽͤͣʹதੑྖҬͱͯ͠࢒Δɻ͜ͷ BPW ΛෛͷిҐ VBPW Ͱ‫ݻ‬ఆ͢Δ͜ͱͰɺ੩ి
γʔϧυͱͯ͠࡞༻͠ɺ༰ྔ݁߹Λஅͪ੾Δ͜ͱ͕ՄೳͱͳΔɻ
BPW ʹΑΔ੩ిγʔϧυ͸ɺ༰ྔ݁߹͚ͩͰͳ͘ɺτϥϯδελͷόοΫήʔτޮՌ΋཈੍Ͱ͖ΔɻBPW ʹΑΔ੩ిγʔϧυ͸ɺSingle SOI ߏ଄ͰͷηϯεϊʔυपΓʹ‫ܗ‬੒ͨ͠ຒΊࠐΈ΢Σϧͱಉ͡໾ׂΛՌͨͨ͢ΊɺόοΫήʔτޮՌ΋཈੍Ͱ͖Δɻઌߦ‫ݚ‬‫[ ڀ‬50] ͷσόΠεγϛϡϨʔγϣϯͷ݁ՌΛਤ 4.2 ʹࣔ͢ɻຒΊࠐΈ΢Σϧͷͳ͍ Single
SOI ͱൺֱ͢ΔͱɺPDD ߏ଄Ͱ͸τϥϯδελͷిྲྀిѹಛੑͷมԽ͕શ͘‫ݟ‬ΒΕͳ͍ͨΊɺόοΫήʔτޮՌΛޮՌతʹ཈੍Ͱ͖͍ͯΔ͜ͱ͕Θ͔Δɻ
Single SOI

(a)
10−3

10−3

IIdrain[A]
D [A]

IIdrain
[A]
D [A]

PDD

(b)

10−4

VBB = −10 V
VBB = −100 V
V = −10 V
VBB =V−200= −100 VV
V = −200 V
VBB =V−400= −400 V
V

10−5

10−4

VBB = −10 V
VBB = −100 V
V = −10 V
VBB =V−200= −100 VV
V = −200 V
VBB =V−400= −400 V
V

10−5

b

b

b

b

b

b

b

b

0.5

0

−0.5

−1

−1.5

gs [V]
VV
[V]
GS

−2

0.5

0

−0.5

−1

−1.5

−2

gs [V]VVGS[V]

ਤ 4.2: (a) Single SOI (ຒΊࠐΈ΢Σϧͳ͠), (b) PDD ͦΕͧΕʹ͓͚ΔόοΫήʔτޮՌͷγϛϡϨʔγϣϯ݁Ռ [50]ɻԣ࣠͸ήʔτɾ ιʔεؒͷిѹ VGS ɺॎ࣠͸υϨΠϯʹྲྀ
ΕΔిྲྀ ID ɻόοΫόΠΞεిѹຖͷ݁ՌΛ৭Λม͍͑ͯࣔͯ͠Δɻ‫د‬ੜ༰ྔܰ‫ʹݮ‬ΑΔ௿ϊΠζԽ
PDD ߏ଄ʹΑΓόοΫήʔτޮՌΛ཈੍Ͱ͖ΔͨΊɺηϯεϊʔυ (ͱͦͷपΓʹ‫ܗ‬੒ͨ͠ຒΊࠐΈ΢Σϧ) ͷαΠζΛখ͘͢͞Δ͜ͱ͕Ͱ͖Δɻ͜ΕʹΑΓɺηϯεϊʔυͱ
CSA ճ࿏ͷग़ྗ෦ͱͷ‫د‬ੜ༰ྔΛ࡟‫͖Ͱݮ‬ΔͨΊɺ࣮ޮతͳϑΟʔυόοΫΩϟύγλ
༰ྔΛখ͘͢͞Δ͜ͱ͕Ͱ͖ΔɻΑͬͯɺม‫׵‬ήΠϯͷߴ͍ૉࢠͷ࣮‫͕ݱ‬ՄೳʹͳΓɺ‫ޙ‬ஈʹ৐ΔϊΠζΛ૬ରతʹམͱͨ݁͠ՌϊΠζੑೳ͕޲্͢Δͱߟ͑ΒΕΔɻ

ిՙऩूޮ཰ͷվળ
Single SOI ߏ଄Ͱ͸ɺిՙΛ‫׬‬શʹऩूͰ͖ͳ͍͜ͱʹ‫ى‬Ҽͨ͠෼ޫੑೳͷྼԽ͕‫ݦ‬ஶͰ͋ͬͨɻPDD ߏ଄ͷ࠷େͷಛ௃Ͱ͋Δɺ֊ஈঢ়ʹ‫ܗ‬੒ͨ͠ߴೱ౓ͷ BPW ͱ௿ೱ౓ͷ
BNW ͕͜ͷ໰୊Λղܾ͢Δɻཪ໘ଆ͔ΒόοΫόΠΞεిѹΛҹՃ͍ͯ͘͠ͱɺ௿ೱ౓
ͷ BNW ͸‫׬‬શʹۭ๡Խ͢Δ͕ɺߴೱ౓ͷ BPW ͸தੑྖҬͷ··࢒ΔɻͦͷͨΊɺBNW

50

ୈ4ষ

PDD ߏ଄Λಋೖͨ͠ϓϩτλΠϓ XRPIX6E

LAPIS SOI Projectͱ BPW ͷ‫ڥ‬ք͸ɺॎํ޲ͷϙςϯγϟϧ͕‫ۃ‬খͱͳΓɺSi/SiO2 ք໘ʹର͢Δϙςϯγϟ
ϧোนͱͯ͠࡞༻͢Δ (ਤ 4.3)ɻ·ͨɺBNW Λ֊ஈঢ়ʹ‫ܗ‬੒͢Δ͜ͱͰɺBNW ͱ BPW
Vmaxͷ‫ڥ‬ք෇ۙ͸ԣํ޲ͷి৔͕‫ͳ͘ڧ‬ΔɻҎ্ΑΓɺۭ๡૚தͰੜ੒͞Εͨ৴߸ిՙ͸‫ۃ‬খ఺·Ͱॎํ޲ʹυϦϑτͨ͠‫ޙ‬ɺԣํ޲ʹυϦϑτͯ͠ηϯεϊʔυʹऩू͞ΕΔɻ͜ͷిՙ༌ૹͷؒ͸ϙςϯγϟϧόϦΞʹΑΓ Si/SiO2 ք໘ʹ৮ΕΔ͜ͱ͸ͳ͍ͨΊɺిՙ͸ࣦΘΕͳ͍ɻͦͷͨΊɺిՙऩूޮ཰ͷ޲্͕‫ظ‬଴Ͱ͖Δɻ
7.0

.0

e-

Back side

Xmin= 0.000

ZC
o
6 or
5.0

din

4.0

ate
3.0

Ymin= 20.211 Ymax= 20(um

Zmin= 0.000

)

2.0

1.0

0.0
-10

.0

-8.6
-7.2

Front side

-3.0
-1.6

r
ntial barrie

Pote

-0.2

1.2
Sense node2
(High potential in detector) .6

0.0

10.0

ordin

20.0

30.0

40.0

50.0

60.0

70.0

X Co

Potential (V)-4.4

Potential (V)-5.8

Sense node)mate (utest_FIELD5

ਤ 4.3: γϛϡϨʔγϣϯͰ࡞੒ͨ͠ PDD ߏ଄ͷ̏࣍‫ݩ‬ϙςϯγϟϧϚοϓ [50]ɻ͜ͷ‫ޙ‬ड़΂Δ XRPIX6E ͷσόΠεߏ଄Λ‫࡞ʹݩ‬੒͍ͯ͠Δɻ҉ిྲྀͷܰ‫ݮ‬ैདྷͷ XRPIX Ͱ͸ɺSi/SiO2 ք໘͸ۭ๡Խ͓ͯ͠Γɺք໘ʹଟ਺ଘࡏ͢Δதؒ४ҐΛհͨ͠೤ྭ‫ى‬༝དྷͷ Surface Dark Current (2.5.4 અ) ͕ൃੜͯ͠͠·͏ɻ͜ͷ҉ిྲྀ͸ΤωϧΪʔ෼ղೳΛ޲্͢Δ্ͰແࢹͰ͖ͣɺղܾ͢΂͖໰୊Ͱ͋ͬͨɻ͜ͷ໰୊͸ɺSi/SiO2
ք໘ʹ‫ܗ‬੒ͨ͠ߴೱ౓ͷ BPW ʹΑΓղܾͰ͖ΔɻBPW ͸ۭ๡Խ͞ΕͣʹதੑྖҬͱ͠
ͯ࢒ΔͨΊɺSi/SiO2 ք໘Ͱൃੜͨ͠ిࢠ͸ BPW தͷϗʔϧʹΑΓ࠶݁߹͢Δ1 ɻ͜ΕʹΑΓɺSurface Dark Current Λ཈੍Ͱ͖Δɻ·ͨɺBPW ͔Βۭ๡૚΁ͷϗʔϧͷྲྀग़͸ɺ
ਤ 4.3 ʹࣔ͢ϙςϯγϟϧোนʹΑΓ્ࢭͰ͖Δɻ
1

Xmax= 73

2.5.4 અͰड़΂ͨΑ͏ʹɺதੑྖҬͰ͸ΩϟϦΞͷੜ੒ͱ࠶݁߹͸௼Γ߹͍ͬͯΔɻ

Zmax= 7.

4.2. PDD ߏ଄Λಋೖͨ͠ XRPIX6E ͷ։ൃ

51์ࣹઢ଱ੑͷ޲্
SOI ‫ݕ‬ग़‫Ͱث‬͸ɺγϯάϧΠϕϯτޮՌ (SEE) ʹର͢Δ଱ੑ͕ඇৗʹߴ͍͜ͱΛड़΂ͨ
(3.1.2 અ)ɻ͔͠͠ɺ෼ް͍ઈԑ૚Λ΋ͭ SOI ‫ݕ‬ग़‫ث‬͸ɺ์ࣹઢʹΑΓੜ੒͞Εͨϗʔϧ͕ओʹઈԑ૚தʹ஝ੵ͞ΕΔ͜ͱʹ‫ى‬Ҽͨ͠ TID (Total Ionization Dose) ޮՌʹහ‫͋Ͱײ‬Δ͜ͱ͕ࢦఠ͞Ε͍ͯΔ [51]ɻઈԑ૚தʹ஝ੵ͞Εͨϓϥεిՙ͸ઈԑ૚ͷిҐΛมԽͤ͞ɺτϥϯδελಛੑʹѱӨ‫ڹ‬Λ‫ͨ͢΅ٴ‬ΊɺରࡦΛࢪ͢ඞཁ͕͋ͬͨɻ
PDD ߏ଄Ͱ͸ɺઈԑ૚ͷిҐͷมԽΛ VBPW ͰΩϟϯηϧ͢Δ͜ͱͰɺTID ޮՌΛ཈੍
Ͱ͖Δɻ࣮ࡍɺཅࢠরࣹࢼ‫ʹݧ‬ΑΓɺैདྷͷૉࢠͱൺֱͯ͠ TID ޮՌΛ཈੍Ͱ͖͍ͯΔ
͜ͱΛ࣮ূ͍ͯ͠Δ [52]ɻ

˙ 4.2

PDD ߏ଄Λಋೖͨ͠ XRPIX6E ͷ։ൃ

4.2.1 XRPIX6E ͷ֓ཁ
(a)

(b)

ਤ 4.4: XRPIX6E ૉࢠͷ (a) ࣸਅɺ(b) ઃ‫֓ܭ‬೦ਤɻ

XRPIX6E(ਤ 4.4) ͸ PDD ߏ଄ΛॳΊͯಋೖͨ͠ XRPIX ૉࢠͰ͋Δɻਤ 4.5 ʹ XRPIX6E
ͷஅ໘ਤΛɺද 4.1 ʹओͳ࢓༷Λࣔ͢ɻ
XRPIX6E Ͱ͸ɺཪ໘ʹόοΫόΠΞεిѹҹՃ༻ͷബ͍ p+ ૚͕‫ܗ‬੒͞Ε͍ͯΔɻ·ͨɺՄࢹޫःஅ༻ͱͯ͠ͷཪ໘ͷ Al ৠண͸ߦͳ͍ͬͯͳ͍ɻ

4.2.2 XRPIX6E ͰಘΒΕͨੑೳզʑ͸ PDD ߏ଄Λಋೖͨ͠ϓϩτλΠϓ XRPIX6E Λ༻͍ɺ‫ج‬ຊతͳੑೳධՁΛߦͳ͖ͬͯͨ [50, 54]ɻͦͷ࠷தɺ௿͍ |VBB | Ͱ͸ਖ਼ৗʹಈ࡞͠ͳ͍ͱ͍͏໰୊ʹ௚໘ͨ͠ɻզʑ
͸ɺ͜ͷ໰୊Λʮ҉ిྲྀ໰୊ʯͱ‫ͼݺ‬ɺௐࠪΛߦͳͬͨ݁Ռɺओͳ‫ݪ‬Ҽ͸ϐΫηϧΞϨΠ
ͷ֎ଆʹ͋Δपลߏ଄ʹ͋Δ͜ͱΛಥ͖ࢭΊͨ [50]ɻ͜ͷৄࡉ͸෇࿥ A.2 Ͱ঺հ͢Δɻࠓճ͸ɺਖ਼ৗͳಈ࡞͕Մೳͳ৚݅ −60◦ C, VBB = −200 V, VBPW = −2.3 V ͰҰ࿈ͷධՁΛߦ͏ɻηϯα૚ͷൺ఍߅͸ > 25 kΩ · cm Ͱ͋Δ͔Βɺࣜ 2.14 ΑΓ‫׬‬શۭ๡Խ͢Δɻ

52

ୈ4ষ
Bias Ring~ 9 µmCircuit Layer

0.2 µm

SiO2

PDD ߏ଄Λಋೖͨ͠ϓϩτλΠϓ XRPIX6E

Peripheral Circuit

Pixel Array

VBPW

p+

Sense node
Buried n-well(BNW)

200 µm

Si Sensor Layer

Buried p-well (BPW)

−− +
−− +
++

p+
X-ray

Back-Bias Voltage (VBB)

ਤ 4.5: XRPIX6E ͷஅ໘ਤɻද 4.1: XRPIX6E ͷ࢓༷ɻ࢓༷

XRPIX6E

νοϓαΠζ
ηϯαʔ໘ੵ
ϐΫηϧαΠζϐΫηϧ਺ηϯαʔ૚ͷްΈ΢ΣϋʔλΠϓ

4.5 mm × 4.5 mm
1.7 mm × 1.7 mm
36 µm × 36 µm
48 × 48∼ 200 µmp ‫ ܕ‬Floating Zone (> 25 kΩ · cm)

ήΠϯͱͦͷҰ༷ੑ
XRPIX6E ͷ‫ج‬ຊੑೳͷ֬ೝͱͯ͠ɺ·ͣΤωϧΪʔֱਖ਼Λߦ͍ૉࢠͷήΠϯΛ‫ٻ‬ΊΔɻΤωϧΪʔֱਖ਼͸ɺX ઢεϖΫτϧͷًઢΛΨ΢γΞϯͰϑΟοτͯ͠ϐʔΫத৺Λ‫ٻ‬ΊɺͦͷًઢͷΤωϧΪʔͱ೾ߴ஋Λઢ‫ܗ‬ϑΟοτ͢Δ͜ͱͰߦ͏ɻΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ 57 Co ͔ΒಘΒΕͨ X ઢΤωϧΪʔ (6.4 keV, 7.1 keV, 14.4 keV) ͱ೾ߴ஋ͷؔ܎Λ
ਤ 4.6 ʹࣔ͢ɻશϐΫηϧͷσʔλΛͦͷ··଍͠߹ΘͤͨεϖΫτϧͰධՁΛߦͳͬͯ
͍Δɻ͜ͷ݁ՌΛҰ࣍ؔ਺ͰϑΟοτͨ͠ͱ͖ͷ܏͖ GADU/Energy ͔ΒɺૉࢠશମͷήΠϯ
GChip ͸࣍ࣜͰ‫͖Ͱࢉܭ‬Δɻ
GChip [µV/e− ] = GADU/Energy [ADU/keV] × 488 µV/ADU × WSi [keV/e− ] / 1.8(4.1)

͜͜ͰɺADC ͷ 1 ADU = 488 µV, Si ͷฏ‫཭ిۉ‬ΤωϧΪʔ WSi = 3.65 × 10−3 keV/e− ,ADC ͷલஈʹ͋ΔΞϯϓ INA103 ͷ૿෯཰ 1.8[46] Λ༻͍ͨɻࣜ 4.1 ΑΓ XRPIX6E ͷૉࢠήΠϯΛ‫ٻ‬ΊΔͱ GChip = 44.1 µV/e− ͱͳΔɻ͜ͷ஋͸ Single SOI ߏ଄Λ΋ͭ XRPIX6H

4.2. PDD ߏ଄Λಋೖͨ͠ XRPIX6E ͷ։ൃ

53ͷ 19.6 µV/e− [47] ͔Βେ෯ʹ޲্͍ͯ͠Δɻ͜Ε͸্Ͱड़΂ͨΑ͏ʹɺPDD ߏ଄ͷಋೖʹΑΓϑΟʔυόοΫΩϟύγλͱฒྻͳ‫د‬ੜ༰ྔΛ཈੍Ͱ͖ͨͨΊͩͱߟ͑ΒΕΔɻ

Pulse Height [ADU]

800

600
14.4 keV

400

6.4 keV200

007.1 keV

5

10

15

20

Energy [keV]ਤ 4.6: XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ X ઢΤωϧΪʔͱ೾ߴ஋ͷؔ܎ɻγϯάϧϐΫηϧΠϕϯτͷεϖΫτϧ͔ΒಘΒΕͨ݁ՌΛ͍ࣔͯ͠Δɻ

CMOS ΠϝʔδηϯαͰ͸ɺϐΫηϧຖʹ‫ݸ‬ผͷΞϯϓΛ΋ͭͨΊɺCCD ‫ݕ‬ग़‫ͱث‬͸ҟͳΓϐΫηϧຖʹήΠϯ͹Β͖͕ͭੜ͡ΔɻͦͷͨΊɺϐΫηϧຖͷ೾ߴ஋Λͦͷ··଍͠߹ΘͤΔͱεϖΫτϧͷًઢ͕‫্͚͔ݟ‬ଠ͘ͳΓɺΤωϧΪʔ෼ղೳ͕ྼԽ͢Δɻ
ͦ͜ͰɺήΠϯͷ͹Β͖ͭʹ༝དྷ͢Δ೾ߴ஋ͷඇҰ༷ੑΛิਖ਼͢ΔͨΊɺ֤ϐΫηϧͰΤωϧΪʔֱਖ਼Λߦ͏ɻಘΒΕͨϐΫηϧຖͷήΠϯͷ 2 ࣍‫ݩ‬ϚοϓͱώετάϥϜΛਤ
4.7 ʹࣔ͢ɻਤ 4.7(b) ͷώετάϥϜΛΨ΢γΞϯͰϑΟοτ͢ΔͱɺήΠϯ͹Β͖ͭ͸
FWHM Ͱ 2.1%ͱ‫ͨͬ·ٻ‬ɻ͜ͷήΠϯ͹Β͖ͭ͸ϐΫηϧຖͷ CSA ճ࿏ (‫ ͼٴ‬SF ճ࿏)Λߏ੒͢Δτϥϯδελͷ‫ݸ‬ੑɺCSA ճ࿏ͷϑΟʔυόοΫΩϟύγλͷ༰ྔ͹Β͖ͭͳͲʹ༝དྷ͢Δͱߟ͑ΒΕΔɻ࣮ࡍɺผͷ XRPIX6E ૉࢠͷήΠϯ͹Β͖ͭ͸ 2.4%[53]ɺಉ
͡ϐΫηϧճ࿏Λ༗͢Δେ‫ܕ‬ૉࢠ XRPIX5b ΋ 1.8%[55] Ͱ͋Γɺ֓ͶҰக͍ͯ͠ΔͨΊɺૉࢠʹґΒͣಉఔ౓ͷ͹Β͖ͭͰ͋Δͱߟ͑ΒΕΔɻ

Πϕϯτ‫ۦ‬ಈಡΈग़͠ͰͷεϖΫτϧੑೳલઅͰ‫ٻ‬ΊͨϐΫηϧຖͷήΠϯΛ༻͍ͯɺϐΫηϧຖʹิਖ਼ͯ͠଍͠߹Θͤͨ 57 CoͷγϯάϧϐΫηϧΠϕϯτεϖΫτϧΛਤ 4.8 ʹࣔ͢ɻද໘রࣹɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠σʔλΛ༻͍ͯධՁΛߦͳͬͨɻεϖΫτϧʹ͓͍ͯಛච͢΂͖͸ɺΤωϧΪʔ෼ղೳͰ͋Δɻ6.4 keV ͰͷΤωϧΪʔ෼ղೳ͸ɺFWHM Ͱ 187 eV Ͱ͋ΓɺFORCEͷཁ‫ٻ‬Λे෼ʹຬͨ͢ա‫ߴ࠷ڈ‬ͷ݁ՌͰ͋Δɻ͜ͷΑ͏ʹΠϕϯτ‫ۦ‬ಈಡΈग़͠ͷ෼ޫੑೳΛඈ༂తʹ޲্Ͱ͖ͨͷ͸ɺSingle SOI Ͱ໰୊ͱͳ͍ͬͯͨɺճ࿏૚ͱηϯα૚ͷి‫ؾ‬తͳ‫ׯ‬বΛ PDD ߏ଄Ͱ཈੍Ͱ͖ͨͨΊͩͱߟ͑ΒΕΔɻ

ୈ4ষ

40

45

Row Address

35
44.5
30
44

25

43.5

20

(b) Gain Histogram
350
300

Counts/bin

45.5

-

(a) Gain Map

45

PDD ߏ଄Λಋೖͨ͠ϓϩτλΠϓ XRPIX6E

Gain [uV/e ]

54

250
200
150

15

43

100

10

42.5

50

42

0
40

5
5

10

15

20

25

30

35

40

45

0.93 μV/e−
in FWHM (2.1%)

41

42

43

44

45

-

46

47

48

Gain [uV/e ]Column Address

3.
5×
10
5

ਤ 4.7: XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ɺϐΫηϧຖͷήΠϯ͹Β͖ͭɻ(a) ϐΫηϧຖͷήΠϯϚοϓɺ(b) ϐΫηϧຖͷήΠϯώετάϥϜɻ

6.4 keV

2×
10
5
1.
5×
10
5

187 eV in FWHM

105Counts/bin

2.
5×
10
5

3×
10
5

57Co

0

5×
10
4

7.1 keV
14.4 keV
0

2.5

5

7.5

10

12.5

15

Energy [keV]ਤ 4.8: XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ɺήΠϯิਖ਼‫ޙ‬ͷ 57 Co ͷγϯάϧϐ
ΫηϧΠϕϯτεϖΫτϧɻσʔλ͸ −60◦ C, VBB = −200 V, ද໘রࣹͷ৚݅Ͱऔಘͯ͠
͍Δɻ

4.2. PDD ߏ଄Λಋೖͨ͠ XRPIX6E ͷ։ൃ

55ಡΈग़͠ϊΠζϑϨʔϜಡΈग़͠Ͱऔಘͨ͠ϖσελϧ෯͔ΒɺಡΈग़͠ϊΠζΛࢉग़͢Δɻ3.2.4 અͰड़΂ͨσʔλॲཧʹΑΓิਖ਼ͨ͠ϖσελϧ෯ʹ͍ͭͯɺΨ΢γΞϯͰϑΟοτͨ͠ͱ͖ͷඪ४ภ͔ࠩΒಡΈग़͠ϊΠζΛ‫ٻ‬ΊΔɻ−60◦ C ͷ৚݅Ͱऔಘͨͨ͠Ίɺ҉ిྲྀϊΠζ͕ແࢹͰ͖Δͱͯ͠ධՁ͢ΔͱɺಡΈग़͠ϊΠζ͸ 12 e− (rms) ͱ‫ͨͬ·ٻ‬ɻ͜ͷ݁Ռʹ͍ͭͯɺಉ͘͡҉ిྲྀϊΠζ͕ແࢹͰ͖Δͱͯ͠ධՁͨ͠ैདྷͷૉࢠͷಡΈग़͠ϊΠζͱൺֱΛߦ͏ɻྺ୅ͷૉࢠͱ XRPIX6E ʹ͓͚ΔಡΈग़͠ϊΠζͱૉࢠήΠϯͷؔ܎Λਤ
4.9 ʹࣔ͢ɻXRPIX6E ͷ݁Ռ΋ −1 ͷ΂͖৐ଇͷؔ܎ʹै͏͜ͱ͔ΒɺಡΈग़͠ϊΠζ௿‫ݮ‬͸ૉࢠήΠϯͷ޲্ʹΑΓ࣮‫͑ߟͱ͖ͨͰݱ‬ΒΕΔɻ
XRPIX1XRPIX3b-SF

Readout Noise [e− in rms]

100

XRPIX2b-A
XRPIX1b
XRPIX2b-B
XRPIX2b-C

XRPIX2b-D

XRPIX3b-CSA

XRPIX6E

10Requirement

Goal

1
1

10

100

Gain [μV/e−]ਤ 4.9: ಡΈग़͠ϊΠζͱήΠϯͷؔ܎ɻαϒϐΫηϧੑೳ
PDD ߏ଄Λಋೖͨ͠ XRPIX6E Ͱ͸ɺిՙऩूޮ཰ͷ޲্͕‫ظ‬଴Ͱ͖Δɻͦ͜Ͱɺ
ʮϝογϡ࣮‫ݧ‬ʯͱ͍͏ख๏Λ༻͍ͯɺXRPIX6E ͷαϒϐΫηϧੑೳධՁΛߦͳͬͨ [56]ɻϝογϡ࣮‫ͯʹݧ‬ɺαϒϐΫηϧྖҬͰऔಘͨ͠ W-Lα (8.4 keV), W-Lβ (9.7 keV) ͷ X ઢεϖΫτϧΛਤ 4.10 ʹࣔ͢ɻϐΫηϧ಺෦ͷ X ઢೖࣹҐஔʹΑΔ෼ޫੑೳͷେ͖ͳมԽ͸‫ݟ‬ΒΕͳ͍ɻ͜ͷ݁Ռ͔Βɺैདྷͷߏ଄Ͱ‫ݟ‬ΒΕͨిՙଛࣦ͸ɺXRPIX6E Ͱେ෯ʹվળͨ͠ͱߟ͑ΒΕΔɻ

56

ୈ4ষ

PDD ߏ଄Λಋೖͨ͠ϓϩτλΠϓ XRPIX6E

ਤ 4.10: XRPIX6E αϒϐΫηϧຖʹද໘রࣹͰऔಘͨ͠ W-L X ઢεϖΫτϧ [56]ɻ੺ͷεϖΫτϧ͸γϯάϧϐΫηϧΠϕϯτɺ੨ɺ྘ɺϚθϯλͷεϖΫτϧ͸ෳ਺ϐΫηϧʹ·͕ͨΔΠϕϯτΛ͍ࣔͯ͠Δɻ

57

ୈ 5 ষ XRPIX6E ͷೈ X ઢੑೳධՁ
FORCE ͷೈ X ઢੑೳʹର͢Δཁ‫ٻ‬͸ɺ1 keV ·Ͱͷ X ઢʹ‫౓ײ‬Λ΋ͭ͜ͱɺ1 µm ͷཪ໘ෆ‫ײ‬૚ްʹ૬౰͢Δ‫ݕ‬ग़ޮ཰Λ΋ͭ͜ͱͰ͋Δ (1.2.2 અ)ɻैདྷͷߏ଄ (Single SOI) Λ΋ͭ XRPIX Ͱ͸ɺ2.1 keV ͷ X ઢͷ‫ݕ‬ग़ͱ࣮ޮతͳཪ໘ෆ‫ײ‬૚ް 0.9–1 µm Λୡ੒͍ͯ͠Δ(3.3 અ)ɻ͔͠͠ɺཁ‫ٻ‬஋Ͱ͋Δ 1 keV ͷ‫ݕ‬ग़ʹ͸੒ޭ͍ͯ͠ͳ͍ɻ͞Βʹɺ͜ͷ݁Ռ͸ϑϨʔϜಡΈग़͠ͰಘΒΕͨ݁ՌͰ͋ΔɻFORCE ͷϝΠϯϞʔυͰ͋ΔΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ɺճ࿏૚ͱηϯα૚ͷ‫ׯ‬বϊΠζϨϕϧ͕ߴ͍ͨΊɺೈ X ઢʹΑΔඍऑͳ৴߸ϨϕϧͰ͸τϦΨ͢Δ͜ͱ͕Ͱ͖ͳ͍ (3.3 અ)ɻ͜ͷ‫ݪ‬Ҽ͸ճ࿏૚ͱηϯα૚ͷ‫ׯ‬বʹ͋ΓɺͦΕΛ཈੍͢Δ͜ͱ͕‫͋Ͱݤ‬Δɻ
զʑ͕৽ͨʹ։ൃͨ͠ૉࢠ XRPIX6E ͸ɺPDD ߏ଄ͷಋೖʹΑΓɺ্‫ه‬ͷ‫ׯ‬ব໰୊Λղ
ܾ͢ΔૉࢠͰ͋Δɻ4.2.2 અͰ͸ɺεϖΫτϧੑೳධՁ͔ΒΠϕϯτ‫ۦ‬ಈಡΈग़͠ͷେ෯ͳੑೳ޲্ͱಡΈग़͠ϊΠζͷ௿‫ݮ‬Λ͔֬Ίͨɻ෼ޫੑೳͱϊΠζੑೳͷվળʹΑΓɺೈ
X ઢੑೳ΋ैདྷͷૉࢠΑΓେ෯ʹ޲্͍ͯ͠Δ͜ͱ͕‫ظ‬଴Ͱ͖Δɻͦ͜Ͱɺզʑ͸͜ͷ
XRPIX6E Λ༻͍ͯɺೈ X ઢੑೳͷධՁΛߦ͏ɻຊষͰ͸ɺೈ X ઢੑೳධՁͷηοτΞο
ϓʹ͍ͭͯ঺հͨ͠‫ʹޙ‬ɺೈ X ઢεϖΫτϧੑೳɺ‫ݕ‬ग़ޮ཰ɺೈ X ઢʹର͢ΔτϦΨੑೳධՁʹ͍ͭͯड़΂Δɻͳ͓ຊষ͸ Kodama et al. (2021)[57] ͷ಺༰Λ‫ؚ‬Ήɻ

˙ 5.1

࣮‫ݧ‬ηοτΞοϓ

5.1.1 ଟ৭‫ ޫܬ‬X ઢֱਖ਼γεςϜΛ༻͍ͨηοτΞοϓ
1 keV ఔ౓ͷೈ X ઢ͸େ‫ؾ‬தͰ‫ٵ‬ऩ͞Ε΍͍ͨ͢ΊɺਅۭதͰೈ X ઢੑೳධՁΛߦ͏ඞཁ͕͋Δɻͦ͜Ͱɺզʑ͸ਅۭதͰೈ X ઢরࣹΛߦ͏͜ͱͷͰ͖Δʮଟ৭‫ ޫܬ‬X ઢֱਖ਼γεςϜʯΛ༻͍ͯධՁΛߦͳͬͨɻਤ 5.1 ʹγεςϜͷ֓೦ਤɺਤ 5.2 ʹ࣮ࡍͷηοτΞοϓΛࣔ͢ɻଟ৭‫ ޫܬ‬X ઢֱਖ਼γεςϜ͸ɺଟ৭ X ઢൃੜ෦ͱ X ઢଌఆ෦Ͱߏ੒͞
Ε͍ͯΔɻϩʔλϦʔϙϯϓ (Ξωετ‫ాؠ‬੡) ͱλʔϘ෼ࢠϙϯϓ (େࡕਅۭ‫ثػ‬੡࡞ॴ੡) Λ༻͍Δ͜ͱͰɺ10−6 Torr ΛԼճΔਅۭ‫Ͱڥ؀‬ଌఆΛߦ͏͜ͱ͕ՄೳͰ͋Δɻ·ͨɺ͜ͷγεςϜ͸Մࢹޫʹ΋‫౓ײ‬Λ΋ͭ XRPIX ͷःޫ΋݉Ͷ͓ͯΓɺՄࢹޫʹΑΔγϣο
τϊΠζ͸‫د‬༩͠ͳ͍ɻ͜ͷγεςϜʹ͍ͭͯɺ(i) ྫྷ٫‫ܥ‬ɺ(ii) X ઢൃੜ૷ஔɺ(iii) ి‫ݯ‬‫ܥ‬ɹͷ 3 ͭʹ෼͚ͯઆ໌͢Δɻ(i) ྫྷ٫‫ܥ‬҉ిྲྀ͸Թ౓ʹ‫͘ڧ‬ґଘ͠ɺߴԹ΄Ͳ҉ిྲྀϊΠζͷ‫د‬༩͕େ͖͘ͳΔͨΊɺྫྷ٫ͯ͠ଌఆΛߦ͏ɻૉࢠͷྫྷ٫૷ஔͱͯ͠ɺ‫ؠ‬୩‫ࢩנ‬ͷΫϥΠΦϛχྫྷ٫‫( ܥ‬ίϯϓϨοαʔ: CA201ɺίʔϧυϔου: P301) Λ༻͍ͨɻίʔϧυϔουͷઌʹɺಔ੡

58

ୈ5ষ

XRPIX6E ͷೈ X ઢੑೳධՁ

Gate Valve

X-ray Tube

PC

Ethernet−60℃

2nd
Target

X-ray

XRPIX
Readout
BoardsRotating Stage

Vacuum Chamber 1

Vacuum Chamber 2

ਤ 5.1: ೈ X ઢੑೳධՁʹ༻͍Δଟ৭‫ ޫܬ‬X ઢֱਖ਼γεςϜͷ֓೦ਤɻコールドヘッド

真空計

コールドヘッドXRPIX真空層&
コールドプレート

X 線発生装置＆回転ステージ
真空層

温度計
電源

ターボ分子
ポンプ

コンプレッサーロータリーポンプਤ 5.2: ೈ X ઢੑೳධՁʹ͓͚Δ࣮ࡍͷηοτΞοϓɻ

5.1. ࣮‫ݧ‬ηοτΞοϓ

59ͷίʔϧυϓϨʔτΛऔΓ෇͚ɺXRPIX ૉࢠͷྫྷ٫Λߦ͏ɻ·ͨɺίʔϧυϓϨʔτʹ೤ిରԹ౓‫ܭ‬ΛऔΓ෇͚ɺԹ౓ΛϞχλͰ͖ΔΑ͏ʹ͍ͯ͠Δɻ͜ͷγεςϜ
ͰɺૉࢠΛ͓͓Αͦ −60◦ C ʹྫྷ٫͢Δ͜ͱ͕Ͱ͖Δɻ(ii) X ઢൃੜ૷ஔ
X ઢൃੜ૷ஔ (Oxford5000 γϦʔζ) ͔Βͷ 1 ࣍ X ઢΛ 2 ࣍λʔήοτʹরࣹ͠ɺͦ
͔͜Βͷ‫ ޫܬ‬X ઢΛ XRPIX ʹরࣹ͢ΔɻXRPIX6E ͷΠϝʔδϯάྖҬͷαΠζ͸
਺ mm × mm ఔ౓Ͱ͋Δͷʹର͠ɺλʔήοτͱ XRPIX ͷ‫཭ڑ‬͸ ∼ 500 mm Ͱ͋ΔͨΊɺ2 ࣍λʔήοτ͔Βͷ X ઢ͸΄΅Ұ༷ʹ XRPIX ʹরࣹ͞ΕΔͱΈͳͤΔɻ
λʔήοτ͸ճసεςʔδʹऔΓ෇͚ΒΕ͓ͯΓɺλʔήοτΛదٓબͼɺXRPIXʹরࣹ͢Δ‫ ޫܬ‬X ઢΛมߋ͢Δ͜ͱ͕ՄೳͰ͋Δɻ(iii) ి‫ܥݯ‬ಡΈग़͠Ϙʔυͱૉࢠ΁ҹՃ͢Δి‫ͯ͠ͱݯ‬ɺςΫγΦࣾ੡ͷτϥϯδελి‫[ ݯ‬58]
ͱςΫτϩχΫε [59] ࣾ੡ͷιʔεϝʔλΛ༻͍ͨɻ‫ج‬ຊతʹ͸ి‫ͯ͠ͱݯ‬τϥϯδελి‫ݯ‬Λ༻͍͕ͨɺόοΫόΠΞεిѹͳͲ > 100 V ͷߴిѹΛ͔͚Δ৔߹΍ɺ
µA, nA Φʔμʔͷग़ྗిྲྀ஋Λଌఆ͢Δࡍ͸ιʔεϝʔλΛ༻͍ͨɻ

5.1.2 ߃Թ૧Λ༻͍ͨηοτΞοϓ
্‫ه‬ͷଟ৭‫ ޫܬ‬X ઢֱਖ਼γεςϜͰධՁΛߦ͏ࡍ͸ɺਅۭҾ͖ͱྫྷ٫ʹ൒೔ఔ౓ͷ࣌ؒΛཁ͢Δɻ1 keV ఔ౓ͷೈ X ઢΛরࣹ͢Δࡍ͸͜ͷγεςϜΛඞཁͱ͢Δ͕ɺͦΕҎ্ͷΤωϧΪʔΛ΋ͭ X ઢΛ์ࣹ͢Δ 57 Co ͳͲͷີ෧ઢ‫ݯ‬Λ༻͍Δࡍ͸ɺਅۭҾ͖͸ෆཁͰ͋Δɻͦ͜Ͱɺີ෧ઢ‫ݯ‬Λ༻͍ͨධՁΛߦ͏ࡍ͸ɺԹ౓ௐઅͱःޫ༻ͱͯ͠߃Թ૧ (ΤεϖοΫࣾ੡ SU-662[60]) Λ࢖༻͢Δɻਤ 5.3 ʹ࣮ࡍͷηοτΞοϓΛࣔ͢ɻ͜ͷγεςϜͰ͸ਅۭҾ͖Λඞཁͱͤͣɺ·ͨྫྷ٫ʹ͔͔Δ࣌ؒ΋ 1 ࣌ؒఔ౓ͱ୹͍ͨΊɺ࣮‫ؒ࣌ݧ‬ͷେ෯ͳ୹ॖ͕ՄೳͰ͋Δɻ

5.1.3 SDD Λ༻͍ͨ༧උ࣮‫ݧ‬SDD (Silicon Drift Detector) Λ༻͍ͯɺධՁʹ༻͍Δ X ઢͷΩϟϦϒϨʔγϣϯΛߦ͏ɻ
SDD ͸ɺϑΝϊ‫ݶ‬քʹഭΔඇৗʹ༏ΕͨΤωϧΪʔ෼ղೳΛ༗͢Δ Si ൒ಋମ‫ݕ‬ग़‫͋Ͱث‬Δɻࠓճ༻͍ͨΞϯϓςοΫࣾͷ XR-100SDD[61] ͸֤ X ઢͷΤωϧΪʔʹର͢Δ‫ݕ‬ग़ޮ཰͕෼͔͍ͬͯΔͨΊɺೖࣹ X ઢͷઈର‫౓ڧ‬ΛଌఆͰ͖Δɻೈ X ઢੑೳධՁͰ༻͍Δ୯৭ઢ F-K (0.68 keV), Al-K (1.5 keV), Ti-K (4.6 keV), Fe-K
(6.4 keV & 7.1 keV) ͱɺ57 Co ͔ΒಘΒΕΔ 57 Fe ‫͔֩ࢠݪ‬Βͷ୤ྭ‫ى‬ઢ (14.4 keV) ͷεϖΫτϧΛਤ 5.4 ʹɺSDD ͷ‫ݕ‬ग़ޮ཰Λਤ 5.5 ʹࣔ͢ɻҎ্ΑΓɺઈର‫౓ڧ‬͸ද 5.1 ͷΑ͏ʹ‫ٻ‬·ͬͨɻ͜͜Ͱɺઈର‫౓ڧ‬ͷ‫ࠩޡ‬͸ SDD ͷίϦϝʔλ໘ੵ (17.0 mm2 ) ͷੇ๏‫( ࠩޡ‬10%)ʹ‫ى‬Ҽ͢Δɻ

60

ୈ5ষ

XRPIX6E ͷೈ X ઢੑೳධՁ

恒温槽

真空層

電源 (トランジスタ電源)

XRPIX & 読み出しボード

電源 (ソースメータ)

ਤ 5.3: ߃Թ૧Λ༻͍ͨηοτΞοϓɻද 5.1: SDD Ͱଌఆͨ͠ X ઢઈର‫౓ڧ‬ɻ‫ ޫܬ‬X ઢͷઈର‫౓ڧ‬͸ Kα, Kβ Λ଍͠߹Θͤͯ
͍Δɻ

F-K
Al-K
Ti-K
Fe-K
57 Fe ‫͔֩ࢠݪ‬Βͷ୤ྭ‫ى‬ઢΤωϧΪʔ (keV)ઈର‫( ౓ڧ‬ph/sec/mm2 )

0.68
1.5
4.5 (Ti-Kα) 4.9 (Ti-Kβ)
6.4 (Fe-Kα) 7.1 (Fe-Kβ)14.4−2
6.6+0.7−0.8 × 10+0.3
3.2−0.4
0.10 ± 0.01
0.108+0.009−0.010(2.0 ± 0.2) × 10−2

5.1. ࣮‫ݧ‬ηοτΞοϓ

61

(b)

60

800

F-K (0.68 keV)

700

Counts/bin

Counts/bin

50
40
30
20

(c)
Al-K (1.5 keV)

Ti-Kα (4.5 keV)

100

600

Counts/bin

(a)

500
400
300

80

60

40

Ti-Kβ (4.9 keV)

200
20

10
0
0

100
0
0

500 1000 1500 2000 2500 3000 3500 4000

Channel [ADU]

Channel [ADU](d)Counts/bin

80

Fe-Kα
(6.4 keV)

500

60

40

500 1000 1500 2000 2500 3000 3500 4000

Channel [ADU]

(e)

Fe-Kβ
(7.1 keV)Counts/bin

100

0
0

500 1000 1500 2000 2500 3000 3500 4000

Fe-Kα
(6.4 keV)

400

300

200

20

100

0
0

0
0

500 1000 1500 2000 2500 3000 3500 4000

Channel [ADU]Fe-Kβ(7.1 keV)

14.4 keV

1000 2000 3000 4000 5000 6000 7000 8000

Channel [ADU]ਤ 5.4: SDD Ͱऔಘͨ͠ X ઢεϖΫτϧɻ(a), (b), (c), (d) ͸ଟ৭‫ ޫܬ‬X ઢֱਖ਼γεςϜɺ(e) ͸ີ෧ઢ‫ ݯ‬57 Co Λ༻͍ͯऔಘͨ͠εϖΫτϧͰ͋Δɻ

Quantum Efficiency

1

0.8

0.6

0.4

0.2

0

1

10

Energy [keV]ਤ 5.5: X ઢΤωϧΪʔʹର͢Δ SDD ͷ‫ݕ‬ग़ޮ཰ɻ

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˙ 5.2

XRPIX6E ͷೈ X ઢੑೳධՁ

ϑϨʔϜಡΈग़͠Ͱͷೈ X ઢੑೳධՁ

ຊઅͰ͸ɺ୯৭ X ઢʹର͢Δ‫ݕ‬ग़ޮ཰ଌఆʹΑΓɺ࣮ޮతͳཪ໘ෆ‫ײ‬૚ްΛධՁ͢Δɻ
લઅͰࣔͨ͠ηοτΞοϓΛ༻͍ͯɺXRPIX6E ͷཪ໘ʹೈ X ઢΛরࣹ͠ɺධՁΛߦ͏ɻશମͷଌఆΛ௨ͯ͠ɺXRPIX6E ͸҉ిྲྀΛ཈੍͢ΔͨΊʹ −60◦ C ·Ͱྫྷ٫ͨ͠΄͔ɺཪ໘෇ۙ΋‫׬‬શۭ๡Խ͢ΔόοΫόΠΞεిѹ VBB = −200 V ΛҹՃͨ͠ɻσʔλऔಘ͸ϑϨʔϜಡΈग़͠Ͱߦ͍ɺ3.2.4 અɺ3.2.5 અͰ঺հͨ͠ख๏ͰղੳΛߦͳͬͨɻ4.2.2 અͰड़΂ͨΑ͏ʹɺϑϨʔϜಡΈग़͠ͰͷಡΈग़͠ϊΠζ͸ σped = 12 e− (45 eV ૬౰) Ͱ͋ͬͨͷͰɺΠϕϯτᮢ஋ͱεϓϦοτᮢ஋͸ͦΕͧΕ 10σped = 120 e− (0.45 keV ૬౰)ͱ 3σped = 36 e− (0.14 keV ૬౰) ʹઃఆͨ͠ɻ

5.2.1 ೈ X ઢεϖΫτϧੑೳධՁ·ͣɺೈ X ઢεϖΫτϧੑೳΛ֬ೝ͢Δɻਤ 5.6 ʹ F-K (0.68 keV) ͱ Al-K (1.5 keV) ͷγϯάϧϐΫηϧΠϕϯτͷεϖΫτϧΛࣔ͢ɻF-K ͱ Al-K ͷΤωϧΪʔ෼ղೳ͸ͦΕͧΕ 140 ± 10 eV ͱ 160 ± 2 eV Ͱ͋ΔɻϑϨʔϜಡΈग़͠ʹ͓͍ͯ͸ɺগͳ͘ͱ΋ 0.68 keV·Ͱ‫ݕ‬ग़Ͱ͖Δ͜ͱ͕Θ͔Δɻ͜Ε͸ɺैདྷͷૉࢠΑΓ΋ಡΈग़͠ϊΠζΛେ෯ʹ௿‫Ͱݮ‬͖ɺΠϕϯτᮢ஋Λ 0.45 keV ૬౰·Ͱখ͘͞Ͱ͖ͨͨΊ࣮‫͑ߟͱ͖ͨͰݱ‬ΒΕΔɻ

Al-K:Frame chipC

(a)

(b)

30

1600

Event Threshold
Frame,Frame Mode
Entire imaging area

25

1400

Al-K
(1.5 keV)

1200
1000

FWHM: 140 ± 10 eV

15

10

F-K
(0.68 keV)

500CountsCounts20

Frame,
Entire imaging area

800

FWHM: 160 ± 2 eV

600
400
200

20

40

60

80 100 120 140 160 180 200

Pulse Height [ADU]

0
0

20

40

60

80 100 120 140 160 180 200

Pulse Height [ADU]ਤ 5.6: XRPIX6E ϑϨʔϜಡΈग़͠Ͱऔಘͨ͠ೈ X ઢͷγϯάϧϐΫηϧΠϕϯτεϖΫ
τϧɻ(a) F-K, (b) Al-Kɻ͍ͣΕ΋ήΠϯิਖ਼͸ߦͳ͓ͬͯΒͣɺ֤ϐΫηϧͰಘΒΕͨσʔλΛͦͷ··଍͠߹Θ͍ͤͯΔɻ

5.2.2 ‫ݕ‬ग़ޮ཰ͱཪ໘ෆ‫ײ‬૚ްͷଌఆ
XRPIX Ͱऔಘͨ͠୯Ґ໘ੵ͋ͨΓͷ X ઢΧ΢ϯτϨʔτͱɺSDD Ͱऔಘͨ͠ X ઢͷઈର‫͔౓ڧ‬Βɺ‫ݕ‬ग़ޮ཰ͷධՁΛߦ͏ɻΧ΢ϯτ਺͸ಘΒΕͨ (γϯάϧϐΫηϧΠϕϯτͰ͸ͳ͘) શ X ઢΠϕϯτͷεϖΫτϧͷϐʔΫΛΨ΢γΞϯͰϑΟοτ͢Δ͜ͱͰ‫ٻ‬Ίɺ

5.2. ϑϨʔϜಡΈग़͠Ͱͷೈ X ઢੑೳධՁ

63ͦΕΛ૯࿐ޫ࣌ؒͱΠϝʔδϯάྖҬͷ໘ੵͰׂΔ͜ͱͰ୯Ґ໘ੵ͋ͨΓͷ X ઢΧ΢ϯτϨʔτΛಘΔɻਤ 5.7 ʹଌఆͨ͠‫ݕ‬ग़ޮ཰ͷΤωϧΪʔґଘੑΛࣔ͢ɻ௿ΤωϧΪʔଆ͸࣮ޮతͳཪ໘ෆ‫ײ‬૚ްʹΑΔ‫ٵ‬ऩɺߴΤωϧΪʔଆ͸ηϯα૚ͷಁաʹΑΓ‫ݕ‬ग़ޮ཰͕Լ͕͍ͬͯΔͱߟ͑ΒΕΔɻͦ͜Ͱɺ֤σʔλ఺Λࣜ 2.47 Λ‫ͨ͠ʹݩ‬ɺ࣍ࣜͷΑ͏ͳΤωϧΪʔͷؔ਺ͰϑΟοτΛߦ͏ɻ
!
"8
!
"9
Wdep − dd
QE(E) = exp −1 − exp −(5.1)
λSi (E)λSi (E)
͜͜Ͱɺd ͸࣮ޮతͳཪ໘ෆ‫ײ‬૚ްɺλSi (E) ͸ Si ʹ͓͚ΔΤωϧΪʔ E ͷ X ઢͷ‫ݮ‬ਰ௕͞ɺWdep = 200 µm ͸ηϯα૚ͷްΈͰ͋Δɻ͜ͷؔ਺ͰϑΟοτͨ݁͠Ռɺ࣮ޮతͳཪ
໘ෆ‫ײ‬૚ް͸ d = 0.60 ± 0.15 µm ͱ‫ͨͬ·ٻ‬ɻ͜ͷ‫ࠩޡ‬͸ͦΕͧΕͷ୯৭ X ઢͷઈର‫౓ڧ‬Λଌఆ͢ΔͨΊʹ༻͍ͨ SDD ͷίϦϝʔλͷ໘ੵ‫( ࠩޡ‬10%) ͕ࢧ഑తͰ͋Δɻ
1.2

Quantum Efficiency

1

0.8

Al-K

Ti-K Fe-K

0.6

0.4

Deexcitation linefrom 57Fe nuclei

F-K

0.2

0
0.5

Frame
Effective Thickness of Dead Layer
1

5

10

20

Energy [keV]ਤ 5.7: XRPIX6E ϑϨʔϜಡΈग़͠Ͱଌఆͨ͠‫ݕ‬ग़ޮ཰ͷΤωϧΪʔґଘੑɻཪ໘ෆ‫ײ‬૚ްʹΑΔ‫ٵ‬ऩͱۭ๡૚ͷಁաʹΑΔϞσϧ (ࣜ 5.1) ͷϕετϑΟοτͱ 1σ ΤϥʔΛͦΕͧΕࠇͷ‫ۂ‬ઢɺࠇͷ໢ֻ͚ྖҬͰ͍ࣔͯ͠Δɻ

FORCE ͷཁ‫ٻ‬͸ɺSi Ͱ 1 µm ͷ࣮ޮతͳཪ໘ෆ‫ײ‬૚ްʹ૬౰͢Δ‫ݕ‬ग़ޮ཰Λ 1 keV ʹ͓͍ͯୡ੒͢Δ͜ͱɺ͢ͳΘͪɺQE(1 keV) > 0.688 Λຬͨ͢͜ͱͰ͋Δɻ͜ͷཁ‫ٻ‬ΛɺՄࢹޫͷःޫ༻ͱͯ͠ཪ໘ʹ Al ৠண (0.2 µm) Λߦͳͬͨ৔߹ʹ͓͍ͯ΋ୡ੒Ͱ͖͍ͯΔ
͔֬ೝ͢Δ1 ɻ1 keV ͷ X ઢʹର͢Δ Al 0.2 µm ͷಁա཰͸ 0.938 ͳͷͰɺ࢒Γͷ Si ෆ‫ײ‬૚ްͷಁա཰͸ 0.688/0.938 = 0.733 ͕ཁ‫͞ٻ‬ΕΔɻ͜ͷಁա཰͸ɺSi ෆ‫ײ‬૚ް 0.83 µm ʹ
૬౰͢Δɻ͜ͷ஋͸࣮ଌͨ͠ෆ‫ײ‬૚ް d = 0.60 ± 0.15 µm Λຬ଍͢ΔͨΊɺFORCE ͷཁ‫ٻ‬Λຬ͍ͨͯ͠Δɻ
1

XRPIX6E Ͱ͸ɺཪ໘ͷ Al ৠணϓϩηε͸ߦͳ͍ͬͯͳ͍ɻ

64

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XRPIX6E ͷೈ X ઢੑೳධՁXRPIX6E ͷཪ໘ʹ‫ܗ‬੒ͨ͠ి‫ۃ‬૚ͷ෺ཧతͳްΈ͸ ∼ 0.2 µm Ͱ͋Δɻ͜Ε͸ɺItou etal. (2016)[43] ͷཪ໘ෆ‫ײ‬૚ްଌఆͰ࢖༻ͨ͠ૉࢠ XRPIX2b ͷి‫ۃ‬૚ͷްΈ ∼ 0.1 µm ΑΓ΋ް͍ɻ͔͠͠ɺXRPIX6E Ͱ͸ɺXRPIX2b ΑΓ΋ബ͍ෆ‫ײ‬૚ްΛୡ੒͍ͯ͠Δɻ͜ͷཧ༝͸ɺXRPIX6E ͷಡΈग़͠ϊΠζΛখ͘͞Ͱ͖ͨͨΊͰ͋Δͱߟ͑ΒΕΔɻXRPIX2b ͷಡΈग़͠ϊΠζ͸ ∼ 61 e− Ͱ͋Δͷʹର͠ɺXRPIX6E ͷಡΈग़͠ϊΠζ͸ 12 e− Ͱ͋Γɺ͓͓Αͦ 1/5 ഒఔ౓ʹ௿‫͍͖ͯͰݮ‬ΔɻಡΈग़͠ϊΠζ௿‫ʹݮ‬ΑΓɺΠϕϯτᮢ஋Λ௿͘
͢Δ͜ͱ͕ՄೳͰ͋Δɻྫ͑͹ XRPIX2b Ͱઃఆ͍ͯͨ͠Πϕϯτᮢ஋͸ 6σped ∼ 360 e−
Ͱ͋Δɻ͜ͷ৔߹ɺ1.5 keV ͷ X ઢ༝དྷͷ৴߸ిՙ͕ 2 ϐΫηϧʹ౳͘͠෼഑͞Εͨ৔߹ɺ
1 ϐΫηϧ͋ͨΓ ∼ 200 e− ͕ऩू͞ΕΔ͜ͱʹͳΔͨΊɺΠϕϯτᮢ஋Λ௒͑ͳ͍ɻҰํͰɺXRPIX6E ͰͷΠϕϯτᮢ஋͸ 10σped ∼ 120 e− Ͱ͋ΔͨΊɺ͜ͷΑ͏ͳΠϕϯτ΋‫ݕ‬
ग़Ͱ͖Δɻ͜ͷΑ͏ʹɺ௿ΤωϧΪʔଆͰͷೈ X ઢ‫ݕ‬ग़ޮ཰ͷҧ͍ʹΑΓɺXRPIX6E Ͱ͸ΑΓബ͍࣮ޮతͳཪ໘ෆ‫ײ‬૚ްΛୡ੒ͨ͠ͱߟ͑ΒΕΔɻҎ্ͷ݁Ռ͸ɺಡΈग़͠ϊΠζΛ͞Βʹ௿‫͖Ͱݮ‬Ε͹ɺೈ X ઢ‫ݕ‬ग़ޮ཰Λ޲্Ͱ͖Δ
͜ͱΛ͍ࣔࠦͯ͠Δɻ1 keV ͷ X ઢ༝དྷͷ৴߸ిՙ͕ 4 ϐΫηϧʹ౳͘͠෼഑͞Εͨ৔߹͸ɺ1 ϐΫηϧ͋ͨΓͷ৴߸ిՙ͸ 68 e− Ͱ͋ΓɺͦΕ͕ 10 σped ʹઃఆ͍ͯ͠ΔΠϕϯτ
ᮢ஋ΑΓ΋ߴ͚Ε͹‫ݕ‬ग़Ͱ͖ΔɻͦΕΏ͑ɺ68/10 e− ∼ 7 e− ΑΓ΋খ͍͞ಡΈग़͠ϊΠζΛ࣮‫͖Ͱݱ‬Ε͹ɺ௿ΤωϧΪʔଆͷ‫ݕ‬ग़ޮ཰Λେ෯ʹ޲্Ͱ͖Δɻ˙ 5.3

Πϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δೈ X ઢτϦΨੑೳධՁલઅͰٞ࿦ͨ͠Α͏ʹɺೈ X ઢʹରͯ͠ϑϨʔϜಡΈग़͠ͷ‫ݕ‬ग़ޮ཰ΛܾΊΔओͳཁૉ͸ɺཪ໘ෆ‫ײ‬૚ͷ෺ཧతͳްΈͱಡΈग़͠ϊΠζͰ͋ΔɻಛʹɺಡΈग़͠ϊΠζ͕‫ݕ‬ग़ޮ཰ΛܾΊ͍ͯΔ͜ͱ͕Θ͔ͬͨɻҰํͰɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸Կ͕ೈ X ઢੑೳʹӨ‫͢ڹ‬ΔͷͰ͋Ζ͏͔? Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱೈ X ઢੑೳධՁΛߦͳͬͨઌߦ‫ڀݚ‬͸ͳ͘ɺະ஌Ͱ͋Δɻ͔͠͠ɺԞ໺म࢜࿦จ [38] Ͱ͸ɺXRPIX5b Λ༻͍ͨτϦΨੑೳධՁʹΑΓɺ‫ݕ‬ग़Ͱ͖ΔΤωϧΪʔͷԼ‫ݶ‬஋͸τϦΨᮢ஋ిѹ͕ܾΊ͍ͯΔͱ͍͏ࣔࠦΛಘͯ
͍Δɻͦ͜ͰɺຊઅͰ͸Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱೈ X ઢ‫ݕ‬ग़ޮ཰ͱೈ X ઢੑೳʹ‫د‬༩͢
Δͱߟ͑ΒΕΔτϦΨੑೳΛௐࠪ͢Δɻ

5.3.1 ೈ X ઢͷΧ΢ϯτϚοϓʹ͓͚ΔඇҰ༷ੑτϦΨճ࿏ʹ͍͔ͭ͘ͷτϦΨᮢ஋ిѹ (Vtr ) Λઃఆͯ͠ଌఆͨ͠ Al-K (1.5 keV) ͷ XઢͷΧ΢ϯτϚοϓΛਤ 5.8 ʹࣔ͢ɻૉࢠҰ໘ʹର͠ɺX ઢΛҰ༷ʹরࣹͨ͠ʹ΋ؔΘΒͣɺΧ΢ϯτ਺͸ӈଆ (Column Address ͕େ͖͍ଆ) ΄Ͳଟ͘ɺࠨଆ΄Ͳখ͍͞ɻVtr ͕ߴ
͘ͳΔͱɺΧ΢ϯτϚοϓͷࠨଆͷྖҬ (Column Address ͕খ͍͞ଆ) ʹ͓͍ͯɺX ઢʹΑΓτϦΨग़ྗͨ͠Πϕϯτ਺͸‫ݮ‬গ͢ΔɻҰํͰɺϑϨʔϜಡΈग़͠Ͱ͸ɺ͜ͷΑ͏ͳ‫ݕ‬ग़ޮ཰ͷඇҰ༷ੑ͸‫ݟ‬ΒΕͳ͍ɻΠϕϯτ‫ۦ‬ಈಡΈग़͠ͱϑϨʔϜಡΈग़͠ʹ͸ɺX ઢ‫ݕ‬ग़൑ఆΛߦ͏ࡍʹϖσελϧΛ
‫ؚ‬Ή͔ɺ‫͔͍ͳ·ؚ‬ɺͱ͍͏ҧ͍͕͋ΔɻϑϨʔϜಡΈग़͠Ͱ͸ɺಡΈग़ͨ͠೾ߴ஋͔Β

Analysis
AnalysisRegion
RegionPH
Map

ExcludeAnalysis
Badpix Analysis
RegionAnalysis
RegionRegion
PH
MapPH

45

40

106
40

35

10535

105
45
106
40
4
10
105 35

30

30
104

4 330
1010

ExcludeAnalysis
Badpix Analysis
RegionRegion
PH PH
5 5
1010

25
103
20

20

10215

102 15

10

10
10

10
10
10

5

5

5

1
5

10

15

20

25

30

35

40

45

0
0 0 5

3 3
1010

25
103
10220

15

0
0

Counts/bin
Counts/bin

25

11
10 50015

20 1000
25

30

1500
35 40

45
2000

2 2
1010

1010

11
0
00 0 5

10500
500
15

Channel
[ADU]
CA

CA

MapmV
VtrCount= −2

V = 0 mV

40

45

10
40

18

1010
40

25

16

35

20
10

15
10

5

130

5

10

15

20

25

30

Column Address

35

40

45

0

10

20
10−1

8

15

6
4

10
10−2

5

12

25

2
5
0 5

10
5

1510 20 1525

20
303525 40 3045

0

1000
1000

1500
1500

2000
2000

ExcludeBadpix Analysis
RegionPH_keV
Analysis
RegionPH_keV

1010
25

35

Counts/bin
Counts/bin
Row Address

15Counts/bin
Row Address

Row Address

25

500
500

ChannelChannel[ADU]
[ADU]

14
20

30

00

Vtr = 2 mV20

35

30 1500
1500
35 40 2000
45
2000

ExcludeBadpix Analysis
RegionPH_keV
Analysis
Count
RegionMap
PH_keV45

30

2010001000
25ChannelChannel
[ADU]
[ADU]
CA

Analysis
RegionMap
PH_keV
trCount

45

65

4 4
1010

Counts/bin
Counts/bin
RA

Counts/bin
RARA

5.3. Πϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δೈ X ઢτϦΨੑೳධՁ

20

1 130
25

15

20
−1 −1
1010

10

Counts/bin
Counts/bin

Analysis Region Map
45

11

−1 −1
1010

15
5

10
−2 −2
1010

−2 −2
1010

5

00 5

5 10
5

Channel[keV]Column Address101510 20151525 2020
30

ChannelChannel[keV]Column[keV]
Address352525 40 303045

0

00

55

1010

1515

2020

ChannelChannel[keV][keV]

ਤ 5.8: τϦΨग़ྗͷΧ΢ϯτϚοϓɻτϦΨग़ྗిѹΛࠨ͔Βॱʹ Vtr = −2, 0, 2 mV ʹઃఆͯ͠औಘ͍ͯ͠Δɻ

Region A

ਤ 5.9: ϑϨʔϜಡΈग़͠Ͱऔಘͨ͠ϖσελϧϚοϓɻ֤ϐΫηϧͷ೾ߴ஋͸ɺऔಘͨ͠શϑϨʔϜͷฏ‫ۉ‬஋Ͱ͋Δɻ੨ઢͰғΜͩྖҬʮRegion Aʯ͸ɺτϦΨੑೳධՁΛߦ͏ࡍʹ༻͍ͨྖҬͰ͋Δɻ

2525

3030

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XRPIX6E ͷೈ X ઢੑೳධՁղੳ্ͰϖσελϧϨϕϧΛࠩ͠Ҿ͍ͯ X ઢΠϕϯτͷ൑ఆΛߦͳ͍ͬͯΔɻҰํͰɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ɺτϦΨճ࿏ͷೖྗஈͷిѹͷมԽ͔Β X ઢΛ‫ݕ‬ग़͍ͯ͠ΔͨΊɺΦϑηοτͷ৐ͬͨ৴߸ిѹΛ Vtr ͱൺֱ͍ͯ͠ΔɻΦϑηοτిѹͱͦͷҰ༷ੑΛௐ΂ΔͨΊʹɺϑϨʔϜಡΈग़͠Λ༻͍ͯਤ 5.9 ʹࣔ͢Α͏ͳϖσελϧϚοϓΛऔಘͨ͠ɻ͜͜Ͱ͸ɺ֤ϐΫηϧͷੜͷ೾ߴ஋ͷฏ‫ۉ‬Λ͓ࣔͯ͠ΓɺX ઢΛরࣹ͠ͳ͍৚݅ԼͰଌఆΛߦͳ͍ͬͯΔɻ͜ͷϖσελϧϚοϓ͸ɺτϦΨճ࿏ͷೖྗΦϑηοτͱ CDS ग़ྗΦϑηοτʹରԠ͢ΔϖσελϧϨϕϧ͕ɺϚοϓͷࠨଆͰ௿͘ͳΔ܏޲͕͋Δ͜ͱΛ͍ࣔͯ͠ΔɻVtr Λೖࣹ͢Δ X ઢΤωϧΪʔ༝དྷͷ೾ߴ஋ʹ͍ۙిѹʹઃఆ͍ͯ͠Δ৔߹ɺΦϑηοτ͕େ͖͍ϐΫηϧ͸τϦΨग़ྗ͞ΕΔ͕ɺΦϑηοτ͕খ͍͞ϐΫηϧ͸τϦΨग़ྗ͞Εͳ͍ͱ͍͏ঢ়‫͕گ‬༧૝͞ΕΔɻ͜Ε͕Χ΢ϯτϚοϓ (ਤ 5.8) ʹҐஔґଘੑ͕ੜ͡Δཧ༝ͩͱߟ͑ΒΕΔɻϖσελϧ஋ͷ࠷େ-࠷খؒͷ෯͸ ∼ 35 ADU ͋Γɺ͜ΕΛΤωϧΪʔʹ‫͢ࢉ׵‬Δͱ ∼ 800 eV ʹ૬౰͢Δɻ͜ͷ஋͸ɺ1 ADU = 488 µVɺSi ͷిࢠਖ਼޸ର͋ͨΓͷฏ‫཭ిۉ‬ΤωϧΪʔʢ3.65 eVʣɺ͓Αͼ
INA103 ͷ૿෯཰ (1.8) Λ࢖༻͢ΔͱɺCSA ճ࿏ͷग़ྗͱͯ͠͸ ∼ 10 mV ͱͳΔɻϖσελϧ஋ͷඇҰ༷ੑͷ‫ݪ‬Ҽ͸ෆ໌Ͱ͋Γɺ‫Ͱ఺࣌ݱ‬͸ௐࠪதͰ͋ΔɻτϦΨճ࿏Λ࢖༻͠ͳ͍ϑϨʔϜಡΈग़͠Ͱ΋ϖσελϧ஋ͷඇҰ༷ੑ͕‫ݟ‬ΒΕΔͨΊɺ τϦΨճ࿏ࣗମ͸‫ݪ‬ҼͰ͸ͳ͍ɻCSA ճ࿏͔Βͷग़ྗͷΦϑηοτిѹ͸ɺτϦΨճ࿏ͷೖྗʹ͋
Δ CDS ճ࿏ʹΑͬͯΦϑηοτ͕Ωϟϯηϧ͞ΕΔͨΊɺਤ 5.9 ʹࣔ͢Α͏ͳඇҰ༷ੑΛҾ͖‫͑ߟͱ͍ͳ͜͞ى‬ΒΕΔɻࠓ‫ޙ‬͸पลճ࿏ɺ഑ઢɺηϯα૚ͷຒΊࠐΈ΢ΣϧͳͲɺXRPIX6E σόΠεͷશମతͳઃ‫ܭ‬Λௐ΂ͯ‫ݪ‬ҼΛಥ͖ࢭΊ͍ͨɻ

5.3.2 ੍‫ྖͨ͠ݶ‬Ҭ಺ͰͷτϦΨੑೳධՁҎԼͰ͸ɺσʔλऩूྖҬΛਤ 5.9 ʹࣔ͢ʮRegion Aʯʹ੍‫͠ݶ‬ɺྖҬ಺ͷϖσελϧ
มಈͷӨ‫ڹ‬Λ࠷খ‫ʹݶ‬཈͑ͨ৚݅ԼͰɺΠϕϯτ‫ۦ‬ಈಡΈग़͠ͷτϦΨੑೳΛධՁ͢Δɻ
Region A ͷϖσελϧ஋ͷ͹Β͖ͭ͸ɺ∼ 11 e− (rms) ʹ૬౰͢Δɻ

࠷খͷτϦΨᮢ஋ిѹͰऔಘͨ͠εϖΫτϧ
ೈ X ઢΛ‫ݕ‬ग़͢ΔͨΊʹ͸ɺVtr ΛԼ͛Δඞཁ͕͋Δɻ͔͠͠ɺVtr ΛԼ͛͗͢ΔͱɺϊΠζʹΑΔτϦΨग़ྗΛট͘ɻϊΠζʹΑΔτϦΨग़ྗ͕͋Δ৔߹ɺಡΈग़͠ʹཁ͢Δ
͕࣌ؒෆ‫ͳͱؒ࣌ײ‬Δɻͦ͜ͰɺεϖΫτϧΛऔಘ͢ΔલʹɺϊΠζʹΑΔτϦΨग़ྗϨʔτͱ Vtr ͷؔ܎Λௐࠪ͠ɺ࠷దͳ Vtr Λܾఆ͢Δɻਤ 5.10 ʹɺX ઢΛরࣹ͠ͳ͍৚݅Լ
ͰɺϊΠζʹΑΔτϦΨग़ྗϨʔτΛଌఆͨ݁͠ՌΛ Vtr ͷؔ਺ͱͯࣔ͢͠ɻVtr Λ௿͘͢ΔͱϊΠζʹΑΓτϦΨग़ྗ͞Ε΍͘͢ͳΔͱ͍͏܏޲͕͋Δ͜ͱ͕Θ͔Δɻ͜͜Ͱ͸ɺ
FORCE ౥ࡌʹ޲͚ͯେ‫ܕ‬ૉࢠԽ (608 × 384 ϐΫηϧ) ͨ͠ͱ͖ɺ࣮࣌ؒ 1 ඵ͋ͨΓͷෆ‫ ਺͕ؒ࣌ײ‬ms ͱͳΔτϦΨग़ྗϨʔτͰ͋Ε͹໰୊ͳ͍ͱ͢ΔɻಡΈग़͠ʹཁ͢Δ࣌ؒ͸ɺ‫ࡏݱ‬ͷಈ࡞Ͱ͸ ∼ 300 µs Ͱ͋ΔͨΊɺେ‫ܕ‬ૉࢠͰͷϊΠζʹΑΔτϦΨग़ྗϨʔτ͕ ∼10 Hz ΑΓ΋খ͚͞Ε͹Α͍ɻ1 ϐΫηϧ͋ͨΓͷϊΠζʹΑΔτϦΨग़ྗϨʔτ͕Ұ༷ͩͱԾఆ͢Δͱɺେ‫ܕ‬ૉࢠͰͷ 10 Hz ͸ Region A Ͱ͸ ∼ 0.01 Hz ʹ૬౰͢ΔͨΊɺର

5.3. Πϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δೈ X ઢτϦΨੑೳධՁ

67

Ԡ͢Δᮢ஋ిѹ͸ Vtr = −2 mV2 ͱͳΔɻ͜Ε͸Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ‫ݕ‬ग़Մೳͳ X ઢΤωϧΪʔͷԼ‫ݶ‬஋ʹରԠ͢Δɻ
Vtr = −2 mV Λ࠾༻͠ɺೈ X ઢεϖΫτϧΛऔಘͨ݁͠ՌΛਤ 5.11 ʹࣔ͢ɻ·ͣಛච͢΂͖͸ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ Al-K (1.5 keV) ͷ‫ݕ‬ग़ʹ੒ޭͨ͜͠ͱͰ͋Δɻ͜Ε͸XRPIX γϦʔζͰॳͰ͋ΓɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ΋େ෯ʹೈ X ઢੑೳ͕޲্ͨ͜͠
ͱΛࣔ݁͢ՌͰ͋ΔɻͦͷҰํͰɺF-K (0.68 keV) ͸Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ‫ݕ‬ग़Ͱ͖ͳ͔ͬͨɻ͕ͨͬͯ͠ɺ0.68–1.5 keV ؒʹɺVtr = −2 mV ʹ૬౰͢ΔΤωϧΪʔᮢ஋͕ଘࡏ
͢Δͱߟ͑ΒΕΔɻ

1000

Trigger Rate [counts/sec]

100

10

1

0.1

0.01

10−3
−12

−10

−8

−6

−4

−2

0

Trigger Threshold Voltage (Vtr) [mV]

ਤ 5.10: ϊΠζʹΑΔτϦΨग़ྗϨʔτͷτϦΨᮢ஋ిѹґଘੑɻΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ‫ݕ‬ग़Մೳͳ X ઢΤωϧΪʔᮢ஋ͷܾఆલઅͰ‫ٻ‬Ίͨ࠷খͷ Vtr = −2 mV ʹ૬౰͢Δ X ઢΤωϧΪʔΛ‫ٻ‬ΊΔͨΊʹ͸ɺτϦΨᮢ஋ిѹͱ X ઢΤωϧΪʔͷֱਖ਼Λߦ͏ඞཁ͕͋Δɻͦ͜Ͱɺզʑ͸ Vtr ͱ X ઢʹΑΔτ
ϦΨग़ྗϨʔτͷؔ܎ʹண໨͠ɺҎԼʹࣔ͢Α͏ͳֱਖ਼Λߦͳͬͨɻ
ਤ 5.12 ʹ֤୯৭ X ઢʹର͢ΔτϦΨग़ྗϨʔτͷ Vtr ґଘੑͷଌఆ݁ՌΛࣔ͢ɻࠓճ
͸ɺAl-K (1.5 keV) ͱ 57 Co ͷ 6.4, 7.1, 14.4 keV Λ༻͍ͯଌఆΛߦͳͬͨɻVtr Λ্͛ΔͱɺX ઢΤωϧΪʔʹ૬౰͢Δ Vtr ෇ۙͰτϦΨग़ྗϨʔτ͕‫ʹܹٸ‬མͪࠐΉৼΔ෣͍Λࣔ͠
͍ͯΔɻX ઢͷΤωϧΪʔத৺ʹରԠ͢ΔτϦΨᮢ஋ిѹΛௐ΂ΔͨΊʹɺʮS-curve ๏ʯ2

Vtr < 0 ͱͳΔͷ͸ෆࣗવͰ͸ͳ͍ɻ·ͣɺ3.2.1 અͰड़΂ͨΑ͏ʹɺ࣮ࡍʹϚΠφεͷిѹΛҹՃ͍ͯ͠ΔͷͰ͸ͳ͘ɺͦΕͧΕਖ਼ͷ Vth ͱ VCDS ͷࠩΛͱͬͨ஋Ͱ͋Δɻ·ͨɺࣜ 3.8 ΑΓɺϦηοτϊΠζ VN
େ͖͞ʹΑͬͯ͸ɺVtr < 0 ͱͳΓಘΔɻ

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2200
2000

Al-K
(1.5 keV)XRPIX6E ͷೈ X ઢੑೳධՁ

Frame,
Entire imaging area
Event-Driven, Vtr = −2 mV,
Entire imaging area
Event-Driven, Vtr = −2 mV,
Region A

1800
1600

Counts1400

FWHM: 204 ± 2 eV

1200
1000
800

FWHM: 160 ± 2 eV

600
400

FWHM: 186 ± 5 eV

200
0
0

20

40

60

80 100 120 140 160 180 200

Pulse Height [ADU]ਤ 5.11: XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ Al-K ͷγϯάϧϐΫηϧΠϕϯτε
ϖΫτϧɻશྖҬͰऔಘͨ͠εϖΫτϧΛ੨৭ɺRegion A Ͱऔಘͨ͠εϖΫτϧΛ྘৭ɺਤ 5.6 ͷϑϨʔϜಡΈग़͠Ͱͷ݁ՌΛ੺৭Ͱ͍ࣔͯ͠Δɻ͍ͣΕ΋ήΠϯิਖ਼͸ߦͳ͓ͬͯΒͣɺ֤ϐΫηϧͰಘΒΕͨσʔλΛͦͷ··଍͠߹Θ͍ͤͯΔɻ

(e.g., [62]) Λ༻͍Δɻ֤୯৭ X ઢʹରͯ࣍ࣜ͠Ͱఆٛ͞ΕΔ‫਺ؔࠩޡ‬Λద༻͢Δɻ!
"* ∞(V − VX )2
Trigger Rate ∝
exp −
dV
(5.2)
2w2X
Vtr
͜͜Ͱɺม‫ ఺ۂ‬VX ͸ɺ୯৭ X ઢͷΤωϧΪʔʹରԠ͢Δ Vtr Ͱ͋Δɻύϥϝʔλ wX ͸ɺτϦΨճ࿏ͱΞφϩάճ࿏ͷϊΠζɺϑΝϊϊΠζɺ҉ిྲྀϊΠζɺ͓ΑͼήΠϯͱϖσελϧͷϐΫηϧ͝ͱͷ͹Β͖ͭʹؔ࿈͍ͯ͠ΔɻҎ߱ɺwX Λʮᮢ஋ΤωϧΪʔ෼ղೳ(Threshold Energy Resolution)ʯͱ‫͢ʹͱ͜Ϳݺ‬ΔɻS-curve ๏ʹΑΓ‫ٻ‬Ίͨ VX ͱ X ઢΤωϧΪʔͷؔ܎Λਤ 5.13 ʹࣔ͢ɻVX ͸ X ઢΤωϧΪʔʹൺྫͯ͠૿Ճ͢Δؔ܎ʹ͋Γɺͦͷ܏͖ʹ wSi Λ͔͚ͯήΠϯʹ‫͢ࢉ׵‬Δͱ 48.0 µV/e− ͱͳΔɻ͜Ε͸ɺτϦΨճ࿏ͷೖྗஈΑΓલʹ͋Δ CSA ճ࿏ͷήΠϯʹରԠ͍ͯ͠Δͱߟ͑ΒΕΔɻ࣮ࡍɺ4.2.2 અͰ‫ٻ‬ΊͨૉࢠήΠϯ͸ 44.1 µV/e− Ͱ͋ΓɺCSA ճ࿏ΑΓ‫ޙ‬ஈͷ SF ճ࿏΍पลճ࿏Λ߹ΘͤͨήΠϯ " 1 ΛՃຯ͢Δͱɺໃ६͠ͳ͍ɻ͜ͷઢ‫܎ؔܗ‬Λ༻͍ΔͱɺVtr = −2 mV ʹରԠ͢Δ‫ݕ‬ग़Մೳͳ࠷খͷᮢ஋ΤωϧΪʔ͸ɺ1.1 keV ͱ‫·ٻ‬Δɻ͜Ε͸ɺF-K (0.68 keV) ͕Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ‫ݕ‬ग़͞Εͳ͔ͬͨͱ͍͏࣮‫݁ݧ‬Ռͱ΋ໃ६͠ͳ͍ɻ͜͜ͰಘΒΕͨ஋
1.1 keV ͸ɺFORCE ϛογϣϯͷཁ‫͋Ͱٻ‬Δ 1.0 keV ΑΓ΋ߴ͘ɺ͞ΒͳΔվળ͕ඞཁͰ
͋Δ͜ͱΛ͍ࣔͯ͠Δɻ

5.3. Πϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δೈ X ઢτϦΨੑೳධՁ

69

Trigger Rate [counts/sec]

10

1.5 keV
6.4 keV

7.1 keV
14.4 keV

1

0.1

0.01

10−3

0

50

100

150

200

Trigger Threshold Voltage [mV]

ਤ 5.12: ୯৭ X ઢʹର͢ΔτϦΨग़ྗϨʔτͷτϦΨᮢ஋ిѹґଘੑɻ੺ɺ੨ɺ྘ͷσʔλ఺͸ͦΕͧΕ์ࣹઢಉҐମ 57 Co ͷ 6.4, 7.1, 14.4 keVɺϚθϯλͷσʔλ఺͸ Al-K (1.5 keV)Λࣔ͢ɻ֤୯৭ X ઢͷϓϩοτ఺ͷϞσϧϑΟοτ͸ͦΕͧΕͷσʔλ఺ͱಉ͡৭Ͱࣔ͠
͍ͯΔɻ

200

V
VXX [mV]

150

100

50

χ

0
30
10
−10
−30

0

2.5

5

7.5

10

12.5

15

Energy [keV]ਤ 5.13: VX ͱ X ઢΤωϧΪʔͷઢ‫܎ؔܗ‬ɻ

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XRPIX6E ͷೈ X ઢੑೳධՁ

Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱͷ‫ݕ‬ग़ޮ཰ͷଌఆϑϨʔϜಡΈग़͠ͰͷධՁͱಉ༷ͷख๏ͰɺΠϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δ‫ݕ‬ग़ޮ཰ͷධՁΛߦͳͬͨɻͦͷ݁ՌΛਤ 5.14 ʹࣔ͢ɻFe-K ͱ 14.4 keV ͷ‫ݕ‬ग़ޮ཰͸ಡΈग़͠ϞʔυʹΑΔҧ͍͸ͳ͍ɻҰํͰɺAl-K ʹ஫໨͢ΔͱɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱͷ‫ݕ‬ग़ޮ཰͸ɺϑϨʔϜಡΈग़͠ΑΓ΋໿ 20% ௿͘ͳΔɻΠϕϯτ‫ۦ‬ಈಡΈग़͠ͷτϦΨᮢ஋͸ɺϑϨʔϜಡΈग़͠Ͱղੳ্ઃఆ͢ΔΠϕϯτᮢ஋ʹରԠ͠ɺτϦΨᮢ஋ʢ1.1 keVʣ͸ɺΠϕϯτᮢ஋ʢ0.45 keVʣΑΓ΋େ෯ʹߴ͘ͳ͍ͬͯΔɻ͜Ε͕ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ
Al-K ͷ‫ݕ‬ग़ޮ཰͕௿͘ͳΔཧ༝Ͱ͋Δͱߟ͑ΒΕΔɻτϦΨᮢ஋͸ Al-K ͷΤωϧΪʔ
1.5 keV ͷ൒஋ΑΓ΋ߴ͍ͨΊɺAl-K ༝དྷͷ৴߸ిՙ͕ 2 ͭҎ্ͷϐΫηϧʹ෼ׂ͞ΕͨΠϕϯτͷҰ෦͸‫ݕ‬ग़͞Εͳ͍ɻ͕ͨͬͯ͠ɺೈ X ઢʹରͯ͠ϑϨʔϜಡΈग़͠ͱಉ͡
‫ݕ‬ग़ޮ཰Λୡ੒͢Δʹ͸ɺτϦΨᮢ஋ΛԼ͛Δඞཁ͕͋Δɻ
1.2

Quantum Efficiency

1

Ti-K Fe-K

0.8

0.6

0.4

Al-K
Deexcitation linefrom 57Fe nuclei

F-K

Frame
Event-Driven
Effective Thickness of Dead Layer

0.2

0
0.5

1

5

10

20

Energy [keV]ਤ 5.14: XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱଌఆͨ͠‫ݕ‬ग़ޮ཰ͷΤωϧΪʔґଘੑɻਤ 5.7
Ͱࣔͨ͠ϑϨʔϜಡΈग़͠ͷ݁Ռ΋͋Θ͍ͤͯࣔͯ͠Δɻ

5.3.3 τϦΨճ࿏ͷϊΠζੑೳલઅΛड͚ͯɺ‫ࡏݱ‬ͷτϦΨᮢ஋ΛܾΊ͍ͯΔϊΠζΛௐ΂Δɻਤ 5.15 ͸ɺલઅͰఆ
ٛͨ͠ᮢ஋ΤωϧΪʔ෼ղೳͱɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ Region A ͔Βऔಘͨ͠γϯάϧϐΫηϧΠϕϯτεϖΫτϧͷΤωϧΪʔ෼ղೳʢຊઅͰ͸ɺᮢ஋ΤωϧΪʔ෼ղೳʹରԠͤͯ͞ɺ
ʮεϖΫτϧΤωϧΪʔ෼ղೳ (Spectral Energy Resolution)ʯͱ‫ͱͱ͜Ϳݺ‬
͢ΔʣͷΤωϧΪʔґଘੑΛ͍ࣔͯ͠Δɻ͜͜Ͱࣔͨ͠εϖΫτϧΤωϧΪʔ෼ղೳ͸ɺRegion A Ͱऔಘ֤ͨ͠ϐΫηϧͷσʔλΛͦͷ··଍͠߹ΘͤͨγϯάϧϐΫηϧΠϕ

Spectral / Threshold Energy Resolution (FWHM) [eV]5.3. Πϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δೈ X ઢτϦΨੑೳධՁ

71

500

Threshold Energy Resolution

200

Spectral Energy Resolution

100

1

10

Energy [keV]ਤ 5.15: Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠εϖΫτϧΤωϧΪʔ෼ղೳ (੺) ͱᮢ஋ΤωϧΪʔ෼ղೳ (੨) ͷΤωϧΪʔґଘੑɻͦΕͧΕͷσʔλ఺ͷϞσϧϑΟοτ͸σʔλ఺ͱಉ͡৭Ͱ͍ࣔͯ͠ΔɻεϖΫτϧΤωϧΪʔ෼ղೳͷ֤σʔλ఺͸ɺήΠϯิਖ਼ΛߦΘͣɺRegion A ͷ֤ϐΫηϧͷσʔλΛͦͷ··଍͠߹ΘͤͨγϯάϧϐΫηϧΠϕϯτ
εϖΫτϧ͔Β‫ٻ‬Ί͍ͯΔɻ

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XRPIX6E ͷೈ X ઢੑೳධՁ

ϯτεϖΫτϧ͔Β‫ٻ‬Ί͍ͯΔɻͦΕͧΕͷσʔλ఺ΛҎԼͷؔ਺ͰϑΟοτΛߦ͏ɻ$!
"Eσgain 2
FE2∆E = 2.355 wSi+ σinde +
(5.3)
wSi
wSi
͜͜Ͱɺ∆E ͸ᮢ஋ΤωϧΪʔ෼ղೳ·ͨ͸εϖΫτϧΤωϧΪʔ෼ղೳɺE ͸ೖࣹͨ͠X ઢΤωϧΪʔɺσinde (rms) ͸ΤωϧΪʔʹґଘ͠ͳ͍ϊΠζ੒෼ɺσgain (rms) ͸ϐΫηϧ
͝ͱͷม‫׵‬ήΠϯͷ૬ରతͳ͹Β͖ͭͰ͋ΔɻಡΈग़͠ϊΠζ͸ɺεϖΫτϧΤωϧΪʔ෼ղೳʹ͓͚ΔΤωϧΪʔʹґଘ͠ͳ͍ϊΠζͷओ੒෼Ͱ͋ΔɻͦΕʹର͠ɺಡΈग़͠ϊΠζʹՃ͑ɺτϦΨճ࿏ͷϊΠζͱϖσελϧ஋ͷඇҰ༷ੑ͕ɺᮢ஋ΤωϧΪʔ෼ղೳʹ‫د‬༩͢ΔɻεϖΫτϧΤωϧΪʔ෼ղೳʹ্͍ͭͯࣜͰϑΟοτͨ݁͠ՌɺΤωϧΪʔʹґଘ͠ͳ͍ϊΠζɺͭ·ΓΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱಈ࡞ͨ͠ࡍͷಡΈग़͠ϊΠζͱɺϐΫηϧ͝ͱͷ૬ରతͳม‫׵‬ήΠϯ͹Β͖ͭ͸ͦΕͧΕ ∼ 18 e− , ∼ 0.9% ͱ‫ͨͬ·ٻ‬ɻ·ͨᮢ஋ΤωϧΪʔ෼ղೳʹ͍ͭͯɺΤωϧΪʔʹґଘ͠ͳ͍ϊΠζ͸ ∼ 25 e− ͱ‫ͨͬ·ٻ‬ɻΠϕϯτ‫ۦ‬ಈಡΈग़͠ͰͷΤωϧΪʔᮢ஋ʢ1.1 keVʣ͸ɺϊΠζʹΑΓτϦΨ͕͔͔Δ
͔Ͳ͏͔ɺͭ·ΓɺϊΠζͷৼ෯ʹൺྫ͢Δͱߟ͑ΒΕΔɻͦ͜ͰɺϊΠζৼ෯ͷ࣮ޮ஋ͱͯ͠ΤωϧΪʔʹґଘ͠ͳ͍ϊΠζ (∼ 25 e− in rms) Λ࠾༻ͯ͠ߟ͑Δɻকདྷతʹϖσελϧ஋ͷඇҰ༷ੑΛे෼ʹ௿‫͖Ͱݮ‬Δͱ͢Δͱɺ࢒ΓͷΤωϧΪʔʹґଘ͠ͳ͍ϊΠζ͸√252 − 112 ∼ 22 e− ʹͳΓɺ‫ݕ‬ग़Մೳͳ࠷খͷ X ઢΤωϧΪʔ͸ 1.1 keV × 22 e− /25 e− ∼1.0 keV ʹ૬౰͢Δɻ͜ͷ࢒ΓͷΤωϧΪʔʹґଘ͠ͳ͍ϊΠζ͸ɺಡΈग़͠ϊΠζͱτϦΨճ࿏Λ‫ؚ‬ΉτϦΨग़ྗ‫ػ‬ೳʹؔ࿈͢ΔϊΠζͰߏ੒͞ΕΔɻτϦΨग़ྗ‫ػ‬ೳʹؔ࿈͢Δ√
ϊΠζ͸ɺ∼ 22 e− ͔ΒಡΈग़͠ϊΠζ ∼ 18 e− Λࠩ͠Ҿ͘͜ͱʹΑΓɺ 222 − 182 ∼ 13 e−ͱਪఆ͞ΕΔɻ5.2.2 અͰࣔͨ͠ϑϨʔϜಡΈग़͠ͰͷΠϕϯτᮢ஋ʹؔ͢Δٞ࿦ʹै͏
ͱɺ1.0 keV ͷෳ਺ϐΫηϧͷΠϕϯτΛ‫ݕ‬ग़͢Δʹ͸ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠ͷΤωϧΪʔᮢ஋Λ͞ΒʹԼ͛Δඞཁ͕͋Δɻͨͱ͑͹ɺ1.0 keV ͷ X ઢͷ 2 ϐΫηϧΠϕϯτΛ
ޮ཰తʹ‫ݕ‬ग़͢Δʹ͸ɺΤωϧΪʔʹґଘ͠ͳ͍ϊΠζΛ 0.5 keV/1.0 keV × 22 e− ∼ 11 e−·Ͱ௿‫͢ݮ‬Δඞཁ͕͋ΔɻҎ্ΑΓɺࠓ‫ޙ‬ͷ՝୊͸ಡΈग़͠ϊΠζͱτϦΨʔग़ྗ‫ػ‬ೳʹؔ࿈͢ΔϊΠζ྆ํͷ௿‫͋Ͱݮ‬Δ͜ͱ͕Θ͔ͬͨɻ

5.3.4 ೈ X ઢੑೳධՁͷ·ͱΊҎ্ΑΓɺೈ X ઢੑೳධՁʹ͍ͭͯ·ͱΊΔͱɺϑϨʔϜಡΈग़͠
F-K (0.68 keV) ·Ͱͷೈ X ઢͷ‫ݕ‬ग़ʹ੒ޭͨ͠ɻ͜Ε͸ಡΈग़͠ϊΠζΛ 12 e− ·Ͱ௿‫ʹͱ͖ͨ͜Ͱݮ‬ΑΓɺΠϕϯτᮢ஋Λ 0.45 keV ૬౰·Ͱ௿͘Ͱ͖ͨͨΊͰ͋Δ
ͱߟ͑ΒΕΔɻΠϕϯτ‫ۦ‬ಈಡΈग़͠
XRPIX γϦʔζͰॳΊͯ Al-K (1.5 keV) ͷ‫ݕ‬ग़ʹ੒ޭͨ͠ɻ͔͠͠ɺF-K (0.68 keV)͸‫ݕ‬ग़Ͱ͖ͣɺ‫ݕ‬ग़ՄೳͳΤωϧΪʔᮢ஋͸ 1.1 keV Ͱ͋Δ͜ͱ͕Θ͔ͬͨɻ͜ͷߴ͍ΤωϧΪʔᮢ஋͸ɺओʹಡΈग़͠ϊΠζɺτϦΨճ࿏ʹؔ࿈͢ΔϊΠζͳͲΛ‫ؚ‬ΜͩΤωϧΪʔʹґଘ͠ͳ͍ϊΠζ (∼ 25 e− ) Ͱܾ·͍ͬͯΔͱߟ͑ΒΕΔɻ

5.3. Πϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δೈ X ઢτϦΨੑೳධՁ73

ͱͳΔɻҎ্ΑΓɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱͷೈ X ઢੑೳ޲্ͷͨΊʹ͸ɺΤωϧΪʔʹґଘ͠ͳ͍ϊΠζΛ ∼ 11 e− ఔ౓·Ͱ௿‫͢ݮ‬Δඞཁ͕͋Δͱ͍͏݁࿦Λಘͨɻࠓճ͸ɺૉࢠΛྫྷ٫͢Δ͜ͱͰɺΤωϧΪʔʹґଘ͠ͳ͍ϊΠζʹ‫د‬༩͢Δ҉ిྲྀϊΠζΛແࢹͯ͠ධՁΛߦͳͬͨɻFORCE ౥ࡌ࣌ͷಈ࡞Թ౓͸ −15◦ C Λ૝ఆ͍ͯ͠ΔͨΊɺ҉ిྲྀϊΠζͷ‫د‬༩͕ແࢹͰ͖ͳ͘ͳΔՄೳੑ͕͋Δɻࠓ‫ޙ‬͸ɺಡΈग़͠ϊΠζ΍τϦ
Ψؔ࿈ͷϊΠζ͚ͩͰͳ͘ɺ҉ిྲྀϊΠζͷ௿‫ʹݮ‬΋য఺Λ౰ͯͯɺ։ൃΛߦ͏ඞཁ΋
͋Δɻ

74

ୈ 6 ষ PDD ߏ଄Λվྑͨ͠৽ૉࢠXRPIX8PDD ߏ଄ͷಋೖʹΑΓɺ෼ޫੑೳ͕େ෯ʹ޲্͕ͨ͠ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ 1 keVͷೈ X ઢ͸‫ݕ‬ग़Ͱ͖ͳ͔ͬͨɻఆྔతͳೈ X ઢτϦΨੑೳධՁͷ݁ՌɺτϦΨճ࿏ϊΠζʹՃ͑ɺಡΈग़͠ϊΠζ΍҉ిྲྀϊΠζͱ͍ͬͨϊΠζ௿‫࠷͕ݮ‬ॏཁ՝୊Ͱ͋Δͱ͍͏ࢦ਑Λಘͨɻ͞ΒͳΔೈ X ઢੑೳ޲্Λߦ͏ͨΊʹ͸ɺԹ౓΍ૉࢠ΁ͷҹՃిѹͳͲͷ༷ʑͳ৚݅Λมߋͯ͠ϊΠζಛੑΛௐ΂Δඞཁ͕͋Δɻ͔͠͠ɺXRPIX6E ʹ͸ɺಛఆͷ৚݅Ͱ͔͠ਖ਼ৗʹಈ࡞͠ͳ͍ͱ͍͏ʮ҉ిྲྀ໰୊ʯ(෇࿥ A.2) Λ๊͍͑ͯΔɻ͜Ε͸ɺϊΠζௐࠪҎલʹɺղܾ͢΂͖࠷༏ઌࣄ߲Ͱ͋Δɻͦ͜Ͱɺઌߦ‫[ ڀݚ‬50] ͰఏҊ͞Εͨ৽ͨͳ PDD ߏ଄Λ‫ʹݩ‬ɺզʑ͸৽ૉࢠʮXRPIX8ʯΛ։ൃͨ͠ɻຊষͰ͸ɺϊΠζ௿‫ݮ‬Λ‫ݟ‬ਾ͑ͨৄࡉͳධՁʹࢸΔ·ͰͷୈҰஈͱͯ͠ɺ‫ج‬ຊతͳੑೳΛ֬ೝ͢Δɻ˙ 6.1

XRPIX8 ૉࢠͷ֓ཁ

XRPIX8 ͸ PDD ߏ଄Λվྑͨ͠ɺ࠷৽ͷ XRPIX ૉࢠͰ͋Δ (ਤ 6.1)ɻਤ 6.2 ʹ XRPIX8ͷஅ໘ਤΛɺද 6.1 ʹओͳ࢓༷Λࣔ͢ɻ(b)

Outermost 1 pixel: dummy pixel

TEG
94×14 pixels

3.4 mmPixel Area
96×96 pixels

Main
94×80 pixels

80 pixels

6.0 mm96 pixels(a)

14 pixels

96 pixels

ਤ 6.1: XRPIX8 ͷ (a) ઃ‫֓ܭ‬೦ਤɺ(b) ըૉྖҬͷ໛ࣜਤɻ

PDD ߏ଄ʹؔͯ͠ɺXRPIX6E ͔Βͷେ͖ͳมߋ఺͸ओʹ 4 ͭ͋Δɻ͜ΕΛɺXRPIX6E
ͱ XRPIX8 ͷߏ଄ͷൺֱΛࣔͨ͠ਤ 6.3 Λ༻͍ͯઆ໌͢Δɻ

6.1. XRPIX8 ૉࢠͷ֓ཁ

75

Bias Ring

Peripheral Circuit~ 9 µmCircuit Layer

0.2 µmSiO2

Pixel Array

VBPW

p+

Sense node
Buried n-well(BNW)

300 µm

Si Sensor Layer

Buried p-well (BPW)p+
Back-Bias Voltage (VBB)

ਤ 6.2: XRPIX8 ͷஅ໘ਤɻ(a) XRPIX6E
VDET

VBIAS

VBPW_RINGVBNW_RING

VSenseVBPW

GND

VSenseVSense

BPW

BPW

BPW2
BNW2

Bias Ring~~n-ringI/O Bufferp−Peripheral Circuit

Pixel Array

VBB

p+

(b) XRPIX8VDET

VBNW_IO

BNW

VdummyVBPW

VBNW_PERIp−p+

VSenseBPW

BNW

Bias Ring

BNW3~

VSense

BPW2
BNW2

~

n-ringI/O Buffer

Peripheral Circuit

Dummy Pixel

Pixel Array

VBB

ਤ 6.3: ैདྷͷ PDD ߏ଄ (XRPIX6E) ͱվྑΛՃ͑ͨ৽ͨͳ PDD ߏ଄ (XRPIX8) ͷൺֱɻ

76

ୈ6ষ

PDD ߏ଄Λվྑͨ͠৽ૉࢠ XRPIX8

ද 6.1: XRPIX8 ͷ࢓༷ɻ࢓༷

XRPIX8νοϓαΠζ
ηϯαʔ໘ੵ
ϐΫηϧαΠζ༗ޮϐΫηϧ਺ηϯαʔ૚ͷްΈ΢ΣϋʔλΠϓ

6.0 mm × 6.0 mm
3.4 mm × 3.4 mm
36 µm × 36 µm
94 × 94 (࠷֎प͸μϛʔϐΫηϧ)∼ 300 µmp ‫ ܕ‬Floating Zone (∼ 4 kΩ · cm)(i) n ‫ܕ‬ϦϯάΛి‫ؾ‬తʹු͔ͤΔ
XRPIX6E ʹ͓͚Δ҉ిྲྀ໰୊ͷࠜຊతͳ‫ݪ‬Ҽ͸ɺपล෦ʹଘࡏ͢Δ n ‫ܕ‬ϦϯάͱϐΫηϧྖҬͱͷి‫ؾ‬త‫ׯ‬বʹ͋Δͱਪଌ͍ͯ͠Δ (෇࿥ A.2)ɻຊདྷɺn ‫ܕ‬Ϧϯά͸ɺ͙͢ྡʹ͋Δ BPW ͱͷؒʹిҐࠩΛͭ͘Δ͜ͱͰɺBPW2 ௚Լͷ BNW2 Λۭ๡Խ
ͤ͞Δ໾ׂΛ΋ͭɻ͜ΕʹΑΓɺBPW ͱཪ໘ؒʹిྲྀͷ‫ܦ‬࿏͕‫ܗ‬੒͞ΕΔͷΛ๷͙͜ͱ͕Ͱ͖Δɻ͔͠͠ɺn ‫ܕ‬ϦϯάͱϐΫηϧྖҬ୺ͱͷ‫͕཭ڑ‬ඇৗʹখ͘͞ɺn‫ܕ‬ϦϯάʹҹՃͨ͠ϓϥεిҐ͕ϐΫηϧྖҬͷϙςϯγϟϧߏ଄ʹӨ‫͢ڹ‬Δ͜ͱ
Ͱɺ҉ిྲྀ໰୊͕ൃੜͨ͠ͱߟ͑ΒΕΔɻ͜ͷ໰୊ͷղܾࡦͱͯ͠ɺn ‫ܕ‬ϦϯάΛి‫ؾ‬తʹු͔ͤΔ͜ͱͰɺBPW ͱେ͖ͳిҐࠩΛੜ·ͳ͍Α͏ʹͨ͠ɻ(ii) BNW2 ΛϐΫηϧྖҬͷΈʹ‫ܗ‬੒
XRPIX6E Ͱ͸ɺϐΫηϧྖҬ͚ͩͰͳ͘ɺपล෦΋֖Λ͢ΔΑ͏ʹ BNW2 Λ‫ܗ‬੒͍ͯͨ͠ɻ௿͍ |VBB | Ͱ͸ BNW2 ͕े෼ʹۭ๡Խ͞Εͣɺपล෦ͷిҐ͕ϐΫηϧྖҬͷϙςϯγϟϧߏ଄ʹӨ‫ڹ‬Λ༩͑΍͍͢ɻͦ͜ͰɺBNW2 ΛϐΫηϧྖҬͷΈʹ‫ܗ‬੒͢Δ͜ͱͰɺपล෦ͱϐΫηϧྖҬͷΫϩετʔΫ͕ੜ͡ʹͨ͘͘͠ɻ
(iii) μϛʔϐΫηϧͷಋೖ
BNW2 ΛϐΫηϧྖҬͷΈʹ‫ܗ‬੒ͨ͜͠ͱʹΑΓɺBNW2 ͷ୺ʹ‫ॴہ‬తͳి৔͕ੜ
͡Δ͜ͱ͕ߟ͑ΒΕΔɻ͜ΕʹΑΓɺ୺ͷϐΫηϧʹӨ‫ڹ‬Λ༩͑ΔՄೳੑ͕͋Δɻ
ͦ͜Ͱɺ୺ͷϐΫηϧʹμϛʔϐΫηϧΛಋೖ͢ΔɻμϛʔϐΫηϧͷηϯεϊʔυʹରԠ͢Δి‫ݻʹۃ‬ఆిҐΛҹՃ͢Δ͜ͱͰɺϐΫηϧ಺෦ʹ‫Ϳٴ‬Ө‫ڹ‬ΛΩϟϯηϧ͢Δ͜ͱ͕Ͱ͖Δɻ(iv) BNW3 ͷ௥Ճઅ 4.2.2 ͰɺैདྷૉࢠͰ‫ݟ‬ΒΕͨిՙଛࣦͷ໰୊͸ɺXRPIX6E Ͱ͸େ෯ʹվળͨ͜͠ͱΛ֬ೝͨ͠ɻ͔͠͠ɺґવͱͯ͠ɺϐΫηϧͷ࢛֯෇ۙʹ͓͍ͯ࠷େͰ 100 eVఔ౓௿ΤωϧΪʔଆ΁ϐʔΫγϑτ͍ͯ͠Δ͜ͱ͕Θ͔ͬͨ [54]ɻిՙଛࣦ͕‫͜ى‬Δ‫ݪ‬ҼͷҰͭͱͯ͠ɺԣํ޲ి৔͕ऑ͍͜ͱ͕ߟ͑ΒΕΔɻηϯα૚಺Ͱੜͨ͡ి
ࢠ͸ද໘ଆ΁ͱॎํ޲ʹυϦϑτͨ͠ͷͪɺϙςϯγϟϧͷ୩ʹԊͬͯηϯεϊʔυ΁ͱυϦϑτ͞ΕΔ͕ɺͦͷԣํ޲ͷి৔͕ऑ͍ͱͦͷ࠷தʹిՙଛࣦ͢ΔՄೳ
ੑ͕ߴ·Δɻͦ͜Ͱɺηϯεϊʔυपล෦ʹ BNW3 Λ௥Ճͨ͠ɻ͜ΕʹΑΓɺηϯ

6.2. ‫ج‬ຊੑೳࢼ‫ݧ‬77εϊʔυʹ޲͔͏ԣํ޲ి৔Λ‫ڧ‬ΊΔ͜ͱ͕Ͱ͖Δɻ

XRPIX8 ͸ɺPDD ߏ଄ͷվྑ͚ͩͰ͸ͳ͘ɺϐΫηϧճ࿏ʹ࠾༻͢ΔτϥϯδελαΠ
ζͷ࠷ద஋Λ୳Δ͜ͱ΋໨తͱ͍ͯ͠ΔɻͦͷͨΊɺ༻͍Δτϥϯδελͷҧ͍ʹΑΓɺʮϝΠϯྖҬ (1 ύλʔϯ)ʯͱʮTEG1 ྖҬ (9 ύλʔϯ)ʯͷ‫ ܭ‬10 ύλʔϯʹ෼ׂ͍ͯ͠Δ(ਤ 6.1)ɻຊम࢜࿦จͰ͸ɺ࠷΋ϐΫηϧ਺ͷଟ͍ϝΠϯྖҬΛ༻͍ͯੑೳධՁΛਐΊΔɻ

˙ 6.2‫ج‬ຊੑೳࢼ‫ݧ‬ຊઅͰ͸ɺిྲྀిѹಛੑͱۭ๡૚ްͷόοΫόΠΞεిѹґଘੑΛ֬ೝ͢Δɻଌఆʹ͓͍ͯ͸ PDD ͷϐϯχϯάిѹ͸ VBPW = −2 V ʹઃఆ͠ɺҎ߱ɺಛʹ‫ࡌه‬ͷͳ͍৔߹͸͜ͷ஋ʹ‫ݻ‬ఆͯ͠ධՁΛߦ͏ɻ

6.2.1 ిྲྀిѹಛੑͷଌఆ·ͣ͸͡Ίʹηϯα૚ͷిྲྀిѹಛੑΛௐ΂ΔɻXRPIX8 ͷۭ๡૚ް͸ XRPIX6E ΑΓް͘ɺ͔ͭηϯα૚ͷൺ఍߅΋ XRPIX6E ΑΓখ͍ͨ͞Ίɺۭ๡Խ͢Δʹ͸ XRPIX6E ΑΓ΋ߴ͍όοΫόΠΞεిѹ VBB ΛҹՃ͢Δඞཁ͕͋ΔɻVBB ͕߱෬ిѹΛ௒͑Δͱ‫ܹٸ‬ʹిྲྀ͕ྲྀΕͯճ࿏ૉࢠ͕ഁյ͞ΕΔ‫͕͋ݥة‬Δ΄͔ɺPDD ͷΑ͏ͳෳࡶͳߏ଄Ͱ͸༧‫ྲྀి͍ͳ͠ظ‬ͷ‫ܦ‬࿏͕‫ܗ‬੒͞ΕΔՄೳੑ͕͋ΔɻͦͷͨΊɺిྲྀిѹಛੑΛ༧Ίௐ΂͓ͯ͘ඞཁ͕͋ΔɻXRPIX8 ͷཪ໘͔Β VBB ΛҹՃ͍͖ͯ͠ɺͦͷͱ͖ GND ͔Β VBB ʹྲྀΕΔిྲྀΛෳ਺ͷԹ౓Ͱଌఆͨ݁͠ՌΛਤ 6.4(a) ʹࣔ͢ɻ͍ͣΕͷԹ౓ʹ͓͍ͯ΋ɺVBB Λ্͛Δͱͱ΋ʹࢦ਺ؔ਺తʹిྲྀ஋͕૿Ճ͢Δ܏޲͕͋ΓɺߴԹ΄Ͳ্ཱ͕ͪΓ͕ૣ͍ɻ͞Βʹɺిྲྀ஋͸ ∼ 100 µA ʹ౸ୡ͍ͯ͠Δɻ͜ͷిྲྀ஋Λిࢠ਺ʹ‫͢ࢉ׵‬Δͱ ∼ 6 × 1011 e− /msec ͱͳΓɺԾʹ֤ϐΫηϧʹ౳෼ͨ͠ͱͯ͠΋ ∼ 7 × 107 e− /(msec · pixel) ͱඇৗʹେ͖͍͜ͱ
͕Θ͔Δɻ͜ͷిྲྀͷ‫ܦ‬࿏Λௐ΂ΔͨΊʹɺपลߏ଄΍ PDD ߏ଄ʹిѹΛҹՃ͢Δ୺ࢠͱ GND
ؒΛྲྀΕΔిྲྀ஋΋ௐࠪͨ͠ɻͦͷதͰɺVBPW ͱ GND ؒɺVBB ͱ GND ؒΛྲྀΕΔిྲྀ஋ͷൺֱΛਤ 6.4(b) ʹࣔ͢ɻ֤ VBB ʹ͓͚Δిྲྀ஋ͷઈର஋͸΄΅Ұக͓ͯ͠Γɺిྲྀ͸
BPW ͔Βཪ໘ʹྲྀΕ͍ͯΔ͜ͱ͕Θ͔Δɻ
‫ࡏݱ‬ɺ͜ͷҟৗʹେ͖ͳిྲྀ͕ྲྀΕΔ‫ݪ‬Ҽ͸‫׬‬શʹ͸ಛఆͰ͖͍ͯͳ͍ɻBPW ͔Βཪ໘ʹྲྀΕ͍ͯΔ͜ͱ͔Βɺগͳ͘ͱ΋ p-n-p ΁ͷిྲྀͷ‫ܦ‬࿏͕‫ܗ‬੒͞Ε͍ͯΔ͜ͱ͕ߟ͑
ΒΕΔɻn ‫ܕ‬ͷ෦෼͸ΩϟϦΞʹͱͬͯϙςϯγϟϧͷ୩ʹ૬౰͢Δ͜ͱ͔ΒɺΩϟϦΞ͕೤ӡಈʹΑΓϙςϯγϟϧ୩Λ৐Γӽ͑ΔɺʮΤδιϯޮՌʯʹΑΓిྲྀ͕ྲྀΕ͍ͯΔՄೳੑ͕͋Δɻ࣮ࡍɺPDD ͱࣅͨߏ଄Λ΋ͭ CMOS Πϝʔδηϯαʔʹ͓͍ͯ΋ɺΤδιϯޮՌʹΑΓɺp-n-p ͷ‫ܦ‬࿏Ͱిྲྀ͕ྲྀΕΔ͜ͱ͕֬ೝ͞Ε͍ͯΔ (e.g., [63])ɻ͜ͷΑ

1

Test Element Group ͷུɻϐΫηϧ಺ͷԿΒ͔ύϥϝʔλΛม͑Δ͜ͱͰɺෆྑղੳ΍৚݅ग़͠Λߦ͏ͨΊͷըૉ‫܈‬Λࢦ͢ɻ

78

ୈ6ষ
(a)

(b)
○

−15○C, Current (VBB)−15○C, Current (VBPW)

25 C
−15○C
−60○C

100

Current [µA]

Current (VBB)[µA]

100

10

1

0.1
0

PDD ߏ଄Λվྑͨ͠৽ૉࢠ XRPIX8

10

1

−50

−100

−150

−200

0.1
0

−50

VBB [V]

−100

−150

−200

VBB [V]ਤ 6.4: XRPIX8 ͷ I-V ಛੑɻ(a) VBB ΛҹՃ͠ɺͦͷͱ͖ͷग़ྗిྲྀͷઈର஋Λϓϩοτ
͍ͯ͠ΔɻԹ౓ຖʹҟͳΔ৭ͷσʔλ఺Ͱ͍ࣔͯ͠Δɻ(b) VBB ΛҹՃ͠ɺͦͷͱ͖ͷ VBB
͔Βͷग़ྗిྲྀͷઈର஋Λ੨ɺVBPW ͔Βͷग़ྗిྲྀΛϚθϯλͰϓϩοτ͍ͯ͠Δɻ
͏ͳ৔߹ɺྲྀΕΔిྲྀ஋͸࣍ࣜͷΑ͏ʹද͞ΕΔɻ
!
"
qφB
∗
2
IEdison = A S Leak T exp −kB T͜͜ͰɺA∗ = A

(6.1)

m∗h
͸༗ޮϦνϟʔυιϯ܎਺2 ͰɺA = 120 A/(cm2 · K2 ) ͸Ϧνϟʔυιm0m∗h∼ 0.3 ͸൒ಋମதͰͷϗʔϧͷ༗ޮ࣭ྔ m∗ ͱిࢠͷ੩ࢭ࣭ྔ m0 ͷൺɺS Leakm0͸ిྲྀ‫ܦ‬࿏ͷ࣮ޮతͳஅ໘ੵɺφB ͸ϙςϯγϟϧোนͷߴ͞Ͱ͋Δɻ͜ͷࣜΛ༻͍Ε͹ɺ֤Թ౓ʹ͓͚Δిྲྀ஋ͷ࣮ଌ஋͔Β φB ͱ S Leak Λ‫ٻ‬ΊΔ͜ͱ͕Ͱ͖Δɻਤ 6.5 ʹిྲྀ஋ͷԹ౓ґଘੑΛࣔ͢ɻ͜ͷଌఆͰ͸ɺVBB = −125 V ʹ‫ݻ‬ఆ͍ͯ͠Δɻࣜ 6.1 ͰϑΟοτͨ͠
݁ՌɺφB ∼ 0.23 V, S Leak ∼ 25 µm2 ͱ‫ͨͬ·ٻ‬ɻ‫ܦ‬࿏ͷ࣮ޮతͳஅ໘ੵ S Leak ∼ 25 µm2 ͸ 1ϐΫηϧʹຬͨͳ͍໘ੵͰ͋Δɻ͕ͨͬͯ͠ɺϐΫηϧΞϨΠʹप‫ظ‬తʹଘࡏ͢Δ BPWͰ͸ͳ͘ɺϐΫηϧΞϨΠ୺ɺಛʹϐΫηϧΞϨΠͷ࢛֯ʹ͋Δ BPW ͷҰ෦͔Βͷ‫ܦ‬࿏͕໬΋Β͍͠ͱߟ͑ΒΕΔɻࠓ‫ޙ‬ɺσόΠεγϛϡϨʔγϣϯ΋ซ༻ͯ͠ɺ͜ͷԾઆΛ‫ݕ‬ূ͢Δඞཁ͕͋Δɻ
ຊम࢜࿦จͰ͸ɺେ͖ͳిྲྀ͕ྲྀΕΔ͜ͱʹΑΔૉࢠഁյͷ‫ݥة‬ੑΛߟྀͯ͠ɺ−60◦ C
Ͱ͸ VBB = −200 V, −15◦ C Ͱ͸ VBB = −150 V, 25◦ C Ͱ͸ VBB = −125 V ΑΓ΋େ͖ͳόοΫόΠΞεిѹΛҹՃ͠ͳ͍͜ͱͱ͢Δɻϯ܎਺ɺ

6.2.2 ۭ๡૚ްͷଌఆຊઅͰ͸ۭ๡૚͕όοΫόΠΞεిѹຖʹͲ͜·Ͱ޿͕Δ͔Λௐࠪ͢Δɻۭ๡૚ް͸ɺઈର‫౓ڧ‬ͷ෼͔͍ͬͯΔ X ઢΛૉࢠʹরࣹ͠ɺ͔ͦ͜Β‫·ٻ‬Δ‫ݕ‬ग़ޮ཰͔Β‫ٻ‬ΊΔ͜ͱ
2ΤδιϯޮՌ͸ɺຊདྷۚଐද໘͔Βͷ೤ “ిࢠ”์ग़ʹؔ͢ΔࣜͰ͋ΔͨΊɺ͜͜Ͱ͸ p ‫ܕ‬൒ಋମͷΩϟϦΞ (ϗʔϧ) ʹ߹ΘͤͯϦνϟʔυιϯ܎਺Λิਖ਼͠ɺ༗ޮϦνϟʔυιϯ܎਺ͱͯ͠༻͍͍ͯΔɻ

6.2. ‫ج‬ຊੑೳࢼ‫ݧ‬

79

100

VBB = −125 V : Fixed

25℃

Current (VBB) [μA]

15℃

0℃
−15℃

10

−30℃

eϕ
IEdison = A*S LeakT 2 exp − B( kBT )

SLeak ~ 25 µm2
φB ~ 0.23 V
1

3.25

3.5

−60℃
3.75

4

4.25

4.5

4.75

1000/T [/K]

ਤ 6.5: XRPIX8 VBB , VBPW ؒͷిྲྀ஋ͷԹ౓ґଘੑɻΞϨχ΢εϓϩοτͰ͍ࣔͯ͠Δɻ
੺ઢ͸ΤδιϯޮՌϞσϧͰͷϕετϑΟοτͰ͋Δɻ
͕Ͱ͖Δɻઈର‫౓ڧ‬͸ SDD Λ༻͍ͯଌఆͰ͖Δ͕ɺSDD ͷίϦϝʔλ໘ੵͷ‫ܥ‬౷‫ʹࠩޡ‬
ΑΔෆఆੑ͕େ͖͍ (e.g., 5.2.2 અ)ɻͦ͜Ͱɺ͜ͷ‫ܥ‬౷‫ࠩޡ‬ΛΩϟϯηϧ͢ΔͨΊʹɺΤωϧΪʔͷҟͳΔ 2 छྨͷ X ઢΧ΢ϯτϨʔτͷൺΛ༻͍Δɻ
XRPIX ʹର͠ɺΤωϧΪʔ E ͷ X ઢΛද໘রࣹͨ͠ͱ͖ͷ‫ݕ‬ग़ޮ཰ QE(E) ͸࣍ࣜͷΑ͏ʹදͤΔɻ
!
" !
".
Wdep
dSiO2
QE(E) = exp −× 1 − exp −(6.2)
λSiO2 (E)λSi (E)
͜͜ͰɺdSiO2 ͸ճ࿏૚ͷްΈɺλSiO2 (E) ͸ճ࿏૚ʹ͓͚ΔΤωϧΪʔ E ͷ X ઢͷ‫ݮ‬ਰ௕
͞3 ɺWdep ͸‫ٻ‬ΊΔۭ๡૚ްɺλSi (E) ͸ηϯα૚ʹ͓͚ΔΤωϧΪʔ E ͷ X ઢͷ‫ݮ‬ਰ௕͞
Ͱ͋ΔɻҟͳΔ 2 ͭͷ X ઢΤωϧΪʔΛͦΕͧΕ E1 , E2 ͱͯ͠ɺͦΕͧΕͷΤωϧΪʔʹର͢Δࣜ 6.2 ͷൺΛऔͬͯ੔ཧ͢Δͱɺ
!
" !
".
Wdep
dSiO2
exp −
× 1 − exp −λSiO2 (E1 )λSi (E1 )!
" !
".
ratio = ratiotrue ×
(6.3)
Wdep
dSiO2
exp
× 1 − exp −λSiO2 (E2 )λSi (E2 )ͱදͤΔɻ͜͜Ͱɺratio ͸ XRPIX Ͱଌఆͨ͠ҟͳΔ X ઢΤωϧΪʔ E1 , E2 ͷΧ΢ϯτ਺ൺ (E1 /E2 )ɺratiotrue ͸ E1 , E2 ͷઈର‫౓ڧ‬ൺ (E1 /E2 ) Ͱ͋Δɻ͕ͨͬͯ͠ɺSDD Ͱͷଌఆ͔Βઈର‫౓ڧ‬ൺΛ༧Ί‫ٻ‬Ί͓͚ͯ͹ɺXRPIX Ͱଌఆͨ͠Χ΢ϯτ਺ൺ͔Βۭ๡૚ްΛ‫ٻ‬ΊΔ͜ͱ͕Ͱ͖Δɻઢ‫ ݯ‬57 Co ͔Βরࣹ͞ΕΔ 6.4 keV & 7.1 keV ͱɺ14.4 keV ͷًઢΛ࢖༻ͯ͠ɺXRPIX8ͷۭ๡૚ްͷධՁΛߦ͏ɻ·ͣɺ6.4 keV & 7.1 keV ͱ 14.4 keV ͷઈର‫౓ڧ‬ൺ͸ɺද 5.1 ΑΓ ratiotrue = 5.37 Ͱ͋Δɻଓ͚ͯɺXRPIX8 ͷΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠શ X-ray
3

MOSFET ಉ࢜Λઈԑ͢ΔͨΊɺճ࿏૚ͷେ෦෼͸ SiO2 Ͱߏ੒͞ΕΔɻͦͷͨΊɺࠓճ͸ SiO2 ͷ‫ݮ‬ਰ௕Λ༻͍ͨɻ

80

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PDD ߏ଄Λվྑͨ͠৽ૉࢠ XRPIX8

Depletion Width (Wdep) [μm]ΠϕϯτεϖΫτϧ͔Βًઢ‫౓ڧ‬ൺΛ‫ٻ‬Ίɺࣜ 6.3 ʹ୅ೖۭͯ͠๡૚ްΛࢉग़ͨ͠ɻࠓ
ճ͸Ͱ͖Δ͚ͩେ͖ͳόοΫόΠΞεిѹ VBB ΛҹՃͰ͖ΔΑ͏ʹɺ−60◦ C ͰධՁΛߦͳ͍ͬͯΔɻ·ͨɺେ‫ؾ‬தͰͷ X ઢͷ‫ٵ‬ऩΛߟྀͯ͠ɺઢ‫ ͱݯ‬XRPIX/SDD ͷ‫཭ڑ‬͸ಉ͡
∼ 7 mm ͚ͩ཭ͯ͠ଌఆΛߦͳͬͨɻҎ্ͷΑ͏ʹͯ͠ಘΒΕۭͨ๡૚ްͷόοΫόΠΞ
εిѹ VBB ґଘੑΛਤ 6.6 ʹࣔ͢ɻਤ 6.6 ʹ͍ͭͯɺࣜ 2.14 ͷൺ఍߅ ρp ΛϑΟοςΟϯάύϥϝʔλͱͯ͠ϑΟοτΛߦ͏͜ͱͰɺ݁Ռ͕ଥ౰͔Ͳ͏͔‫ݕ‬౼͢ΔɻPDD ߏ଄Λ΋ͭ XRPIX8 ͸ɺηϯεϊʔυͷిҐ VSense ∼ 0.8 V ͱ BPW ͷిҐ VBPW = −2.0 V ͕ҟͳΔͨΊɺ࣮ޮతͳόοΫόΠΞεిѹ͕ϐΫηϧҐஔʹΑͬͯҧͬͯ͘Δɻͦ͜Ͱɺࣜ 2.14 ͷ |VBB | ΛͦΕͧΕ |VBB | + VSense ,|VBB |+VBPW Ͱஔ͖‫ ͨ͑׵‬2 छྨͷϞσϧͰϑΟοτΛߦ͍ɺͦͷ݁ՌΛਤ 6.6 ʹࣔ͢ɻBPW‫ج‬४ͷϞσϧͷํ͕খ͍͞ VBB Ͱͷσʔλ఺΋࠶‫͓͖ͯͰݱ‬Γɺۭ๡૚ްΛઆ໌Ͱ͖ͯ
͍Δͱߟ͑ΒΕΔɻBPW ͷ໘ੵ͸ηϯεϊʔυͷ໘ੵΑΓ΋ܻͰେ͖͍ɻͦͷͨΊɺ΄ͱΜͲ BPW ͷిҐʹΑΓɺ࣮ޮతͳ VBB ͕ܾ·͍ͬͯΔͷͩΖ͏ɻBPW ‫ج‬४ͷϞσϧΛ࠾༻͢Δͱɺηϯα૚ͷൺ఍߅͸ 4.4 ± 0.2 kΩ · cm ͱͳΔɻ͜Ε͸ɺXRPIX8 ͷൺ఍߅∼ 4 kΩ · cm ͱ΋Ұக͢ΔɻΑͬͯɺ࣮ࡍͷۭ๡૚ͷ޿͕Γํ͸ɺۭ๡૚ްͷϞσϧͰ࠶‫͍͖ͯͰݱ‬Δͱ݁࿦͚ͮͨɻ
্Ͱࢉग़ͨ͠ൺ఍߅Λ༻͍ͯɺ−60◦ C, −15◦ C ͰҹՃͰ͖Δ࠷େͷ VBB = −200 V, −150 Vʹ͓͚Δۭ๡૚Λ‫͢ࢉܭ‬ΔͱɺͦΕͧΕ 304 ± 7 µm, 264 ± 6 µm ͱͳΔɻ−60◦ C Ͱ͸ཪ໘෇ۙ·Ͱ΄΅ۭ๡Խ͞Ε͍ͯΔ͕ɺ−15◦ C Ͱ͸ۭ๡૚͸ཪ໘·Ͱ౸ୡ͍ͯ͠ͳ͍͜ͱ͕Θ
͔ΔɻԹ౓ʹґΒͣཪ໘·Ͱۭ๡ԽͰ͖ΔΑ͏ʹɺVBB Λ੍‫͢ݶ‬ΔϦʔΫిྲྀ໰୊Λղܾ
͢Δඞཁ͕͋ΔɻҎ߱ɺX ઢরࣹΛߦ͏࣮‫Ͱݧ‬͸ɺಛʹ‫ࡌه‬ͷͳ͍‫ݶ‬Γશͯද໘রࣹͰධ
ՁΛߦ͏ɻ

±
4.2

100

0.

Ω
2k

±
4.4

0.

•cm

Ω
2k

•cm

Wdep ∝ ( | VBB | + ϕi + VSense)

1/2

Wdep ∝ ( | VBB | + ϕi + VBPW)

1/2

10

10

100

−VBB [V]ਤ 6.6: ۭ๡૚ްͷόοΫόΠΞεిѹґଘੑଌఆɻ

6.3. ‫ج‬ຊੑೳධՁ

˙ 6.3

81

‫ج‬ຊੑೳධՁ

અ 1.2.2 Ͱड़΂ͨΑ͏ʹɺFORCE ʹ౥ࡌ༧ఆͷϋΠϒϦου‫ݕ‬ग़‫( ث‬WHXI) ͷಈ࡞Թ౓͸ɺ−15 ◦ C Λ૝ఆ͍ͯ͠Δɻ͜Ε͸ɺSi ‫ݕ‬ग़‫ͯ͠઀ۙʹث‬഑ஔ͢Δ CdTe ૉࢠͷ࠷దԹ౓ͱɺWHXI ͷσβΠϯͰ‫࣮ݱ‬తʹୡ੒Ͱ͖Δ೤‫ڥ؀‬ΛՃຯܾͯ͠ఆ͍ͯ͠Δ [7]ɻҰํͰɺઌߦ‫Ͱڀݚ‬͸࠷ߴੑೳΛग़ͨ͢Ίʹɺ͞Βʹྫྷ٫ͯ͠ධՁΛߦͳ͍ͬͯͨɻͦ͜Ͱɺࠓճ
͸ઌߦ‫߹ʹڀݚ‬Θͤͨ −60 ◦ CɺFORCE ͷಈ࡞Թ౓ʹରԠ͢Δ −15 ◦ Cɺͦͯ͠ɺFORCEϛογϣϯҎ֎ʹ΋͞ΒͳΔԠ༻͕ՄೳͱͳΔɺৗԹ (25 ◦ C) ͰධՁΛਐΊΔɻ
ਤ 6.7 ʹɺϑϨʔϜಡΈग़͠ͱΠϕϯτ‫ۦ‬ಈಡΈग़͠ͰಘΒΕͨɺ57 Co ͱ 241 Am ͷγϯάϧϐΫηϧΠϕϯτͷεϖΫτϧΛࣔ͢ɻ6.2.1 અͰड़΂ͨΑ͏ʹɺ֤Թ౓৚݅ʹ͓͍ͯҹՃͰ͖Δ࠷େͷόοΫόΠΞεిѹ VBB ͕ҟͳΔɻ−60 ◦ C, −15 ◦ C Ͱ͸ͦΕͧΕҹՃͰ͖Δ࠷େͷ VBB Ͱ͋Δ −200 V, −150 V Λɺ25 ◦ C Ͱ͸҉ిྲྀϊΠζʹΑΔ෼ޫੑೳྼԽ
Λ๷͙ͨΊɺগͳ͘ͱ΋ Depletion Dark Current (2.5.4 અ) ͷ‫د‬༩Λ‫ݮ‬ΒͤΔ VBB = −10 VΛ࠾༻͍ͯ͠Δɻ͍ͣΕͷ৚݅ʹ͓͍ͯ΋ɺεϖΫτϧͷऔಘʹ੒ޭͨ͠ɻಛʹɺ҉ిྲྀ໰୊ͷͨΊʹ XRPIX6E Ͱಈ࡞͠ͳ͔ͬͨৗԹԼʹ͓͍ͯ΋εϖΫτϧΛऔಘͰ͖ͨɻ
ਤ 6.7 ͔ΒɺϑϨʔϜಡΈग़͠Ͱ͸Πϕϯτ‫ۦ‬ಈಡΈग़͠ͱൺֱͯ͠ɺεϖΫτϧੑೳͷྼԽ͕‫ݟ‬ΒΕΔɻಛච͢΂͖͸ɺ−60◦ C, VBB = −200 V ͷ৚݅Ͱ௿ΤωϧΪʔଆʹ͋ΒΘΕΔ‫ݦ‬ஶͳςʔϧͰ͋Δɻ57 Co ͱ 241 Am Λൺֱ͢Δͱɺςʔϧ੒෼͕͋ΒΘΕΔ೾ߴ
஋͕ҟͳΔ͜ͱ͔ΒɺX ઢ༝དྷͰ͋Δͱߟ͑ΒΕΔɻ·ͨɺ͜ͷςʔϧ͸ϑϨʔϜಡΈग़͠ͷΈͰ‫ݟ‬ΒΕΔɻҎ্ΑΓɺPDD ߏ଄ʹ͓͚Δϙςϯγϟϧ͕‫ۃ‬খͱͳΔҐஔͰɺԣํ
޲ి৔͕ऑ͍ͨΊʹ৴߸ిՙͷυϦϑτʹ͕͔͔͍࣌ؒͬͯΔͷͰ͸ͳ͍͔ͱߟ͑ͨɻΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ɺτϦΨग़ྗ͔ͯ͠Βάϩʔόϧγϟολʔ (STORE) Λ OFF ʹ͢Δ·Ͱͷ࣌ؒ (STORE OFF TIME) Λ 10 µs ʹઃఆ͍ͯ͠ΔͨΊɺిՙऩू࣌ؒ͸ 10 µs
ఔ౓Ͱ͋Δ (3.2.1 અ)ɻͦΕʹରͯ͠ɺϑϨʔϜಡΈग़͠Ͱ͸Ұఆ࣌ؒ (1 ms) ࿐ޫ͢Δͨ
Ίɺ࿐ޫ࢝Ίʹ X ઢ͕ೖࣹͨ͠৔߹ͳͲ࠷େͰ 1 ms ͷిՙऩू࣌ؒΛ΋ͭɻ΋͠ԣํ޲υϦϑτʹ࣌ؒΛཁ͠ɺ10 µs ΑΓ΋௕͍࣌ؒΛ͔͚ͳ͍ͱऩूͰ͖ͳ͍৔߹ɺ࠶݁߹ա
ఔΛ‫ిͯܦ‬ՙଛࣦͨ͠੒෼Λ൓өͨ͠ςʔϧ͕ϑϨʔϜಡΈग़͠ͷΈʹ͋ΒΘΕΔ͜ͱ͸े෼ߟ͑ΒΕΔɻ·ͨɺ࠷΋େ͖ͳ VBB = −200 V ͷ৚݅ͷΈେ͖ͳςʔϧ͕͋ΒΘΕΔͷ͸ɺॎํ޲ͷి৔Λ‫ͳ͘ڧ‬Δ͜ͱͰ֊ஈঢ়ͷϙςϯγϟϧ͕ΑΓฏୱʹͳΓɺ͞ΒʹυϦϑτʹ͕͔͔͍࣌ؒͬͯΔͨΊͰ͸ͳ͍͔ͱਪଌ͍ͯ͠Δɻࠓ‫ޙ‬͸ STORE OFF TIME
Λେ͖͘͢Δ͜ͱͰςʔϧΛ࠶‫͖Ͱݱ‬Δ͔ͷ௥Ճ࣮‫ݧ‬ɺϐΫηϧೖࣹҐஔʹΑΔ෼ޫੑೳͷҰ༷ੑͷௐࠪɺి৔γϛϡϨʔγϣϯͳͲΛߦ͍ɺ͜ͷԾઆΛ‫͢ূݕ‬Δඞཁ͕͋Δɻ
−60◦ C ͰɺϑϨʔϜಡΈग़͠ͱΠϕϯτ‫ۦ‬ಈಡΈग़͠ͰಘΒΕͨεϖΫτϧ (ਤ 6.7) Λ༻͍ͯΤωϧΪʔֱਖ਼Λߦ͏ɻਤ 6.8 ʹ XRPIX8 ͷ X ઢΤωϧΪʔͱ೾ߴ஋ͷؔ܎Λࣔ͢ɻΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ɺϑϨʔϜಡΈग़͠ͱൺֱֱͯ͠ਖ਼௚ઢͷ੾ย͕ ∼ 20 ADU ΄Ͳ௿೾ߴ஋ଆʹ͖͍ͯΔɻXRPIX6E Ͱ΋ಉ༷ʹ ∼ 20 ADU ͣΕ͍ͯΔ͜ͱ͕֬ೝ͞Εͯ
͍Δ [50]ɻϐΫηϧճ࿏தͰͷτϦΨճ࿏ͱΞφϩάճ࿏ͷ‫ׯ‬বʹΑΓ೾ߴ஋͕มԽͯ͠
͍Δ͜ͱ͕Մೳੑͱͯ͠ߟ͑ΒΕΔ͕ɺࠓ‫ޙ‬ͷ‫͕ূݕ‬ඞཁͰ͋Δɻֱਖ਼௚ઢͷ܏͖͔Βɺ
XRPIX8 ͷૉࢠήΠϯΛ‫ٻ‬ΊΔͱɺϑϨʔϜಡΈग़͠Ͱ͸ 44.8 µV/e− ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ 43.9 µV/e− ͱͳΔɻ͜ͷ஋͸ XRPIX6E ͷૉࢠήΠϯͱ΄΅ಉ౳Ͱ͋ΓɺSingle
SOI (e.g. XRPIX6H Ͱ͸ 19.6 µV/e− ) ͔Βେ෯ʹ޲্͍ͯ͠ΔɻͦͷͨΊ XRPIX6E ͱಉ

82

ୈ6ষ

PDD ߏ଄Λվྑͨ͠৽ૉࢠ XRPIX8

Frame Readout Mode
−60℃, VBB = −200 V
57Co

Counts/bin

13.9 keV

316±4 eVin FWHM600

400

590±10 eV
in FWHM200

7.1 keV0017.8 keV

400

25℃, VBB = −10 V
57Co

241Am

1000

800

631±6 eVin FWHM600
992±5 eVin FWHM

400

241Am

1000

800

521±4 eVin FWHM
600

400

200

798±6 eVin FWHM200

20.7 keV

14.4 keV
200

1200

57Co

241Am

1000

800

−15℃, VBB = −150 V

Counts/bin

6.4 keV

1200

Counts/bin

1200

600

800

1000

0
0

Pulse Height [ADU]

200

400

600

800

1000

0
0

200

Pulse Height [ADU]

400

600

800

1000

Pulse Height [ADU]

Event-Driven Readout Mode
3000

3000

57Co
241Am

2000
298±2 eVin FWHM1500

566±3 eVin FWHM

1000

0
0

3000

241Am

2000
343±2 eVin FWHM1500

612±2 eVin FWHM

1000

500

25℃, VBB = −10 V

57Co

2500

Counts/bin

2500

Counts/bin−15℃, VBB = −150 V

400

600

800

Pulse Height [ADU]

1000

0
0

241Am

2000
1500
490±3 eVin FWHM
1000

500

200

57Co

2500

Counts/bin−60℃, VBB = −200 V

796±3 eVin FWHM

500

200

400

600

800

Pulse Height [ADU]

1000

0
0

200

400

600

800

1000

Pulse Height [ADU]ਤ 6.7: XRPIX8 ϑϨʔϜಡΈग़͠ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ 57 Co, 241 Am ͷγϯάϧϐΫηϧΠϕϯτεϖΫτϧɻ͍ͣΕͷ৚݅΋ද໘রࣹͰଌఆΛߦͳ͍ͬͯΔɻ͜͜
Ͱ͸ήΠϯิਖ਼͸ߦΘͣɺશ໘Ͱऔಘͨ͠εϖΫτϧΛͦͷ··଍͠߹Θ͍ͤͯΔɻ

6.3. ‫ج‬ຊੑೳධՁ

83༷ʹɺPDD ߏ଄ͷಋೖʹΑΓϑΟʔυόοΫΩϟύγλͱฒྻͳ‫د‬ੜ༰ྔΛ཈੍Ͱ͖ͯ
͍Δͱߟ͑ΒΕΔɻ

Pulse Height [ADU]1000

フレーム読み出し

傾き：45.3 ADU/keV
切片：−5.1 ADU

800

13.9 keV

17.8 keV

600

400

14.4 keV

6.4 keV

イベント駆動読み出し200

傾き：44.4 ADU/keV
切片：−22.1 ADU

7.1 keV0020.7 keV

5

10

15

20

25

Energy [keV]ਤ 6.8: XRPIX8 ϑϨʔϜಡΈग़͠ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ X ઢΤωϧΪʔͱ೾ߴ஋ͷؔ܎ɻ

6.3.1 ϐΫηϧຖͷήΠϯͷҰ༷ੑͱิਖ਼
અ 4.2.2 ͱಉ༷ʹɺXRPIX8 Ͱ΋֤ϐΫηϧͰΤωϧΪʔֱਖ਼Λߦ͏ɻΠϕϯτ‫ۦ‬ಈಡΈग़͠ͰಘΒΕͨϐΫηϧຖͷήΠϯΛਤ 6.9 ʹࣔ͢ɻਤ 6.9(b) ͷώετάϥϜΛΨ΢γΞϯ
ͰϑΟοτ͢ΔͱɺήΠϯ͹Β͖ͭ͸ FWHM Ͱ 2.4%ͱ‫ͨͬ·ٻ‬ɻ͜ͷ݁Ռ͸ɺXRPIX6E
ͷΠϕϯτ‫ۦ‬ಈಡΈग़͠ͰͷήΠϯ͹Β͖ͭ 2.1% (FWHM) ͱ֓ͶҰக͍ͯ͠Δɻ
֤ϐΫηϧͰΤωϧΪʔֱਖ਼ͨ݁͠ՌΛ༻͍ͯɺϐΫηϧຖʹ೾ߴ஋Λิਖ਼ͯ͠଍͠߹Θͤͨ 57 Co ͷγϯάϧϐΫηϧΠϕϯτεϖΫτϧΛਤ 6.10 ʹࣔ͢ɻ−60◦ C, VBB = −200 V
ͱ −15◦ C, VBB = −150 V ೋͭͷ৚݅ͰήΠϯิਖ਼Λߦͳ͍ͬͯΔɻ−60◦ C, VBB = −200 V Ͱͷ 6.4 keV ͷΤωϧΪʔ෼ղೳ͸ɺFWHM Ͱ 182 eV ͱ‫ͨͬ·ٻ‬ɻ͜ͷ݁Ռ͸ XRPIX6E Πϕϯτ‫ۦ‬ಈಡΈग़͠ͰͷΤωϧΪʔ෼ղೳ 187 eV ͱ΄΅ಉ౳Ͱ͋Γɺ෼ޫੑೳʹӨ‫͘ͳڹ‬҉ిྲྀ໰୊ΛղܾͰ͖͍ͯΔɻҰํɺ−15◦ C, VBB = −150 V ͷ৚݅Ͱ‫ٻ‬Ίͨ 6.4 keV ͷΤωϧΪʔ෼ղೳ͸ɺFWHM Ͱ 238 eV ͱͳΓɺ−60◦ C, VBB = −200 V ͷ৚݅ͱൺֱͯ͠ 50 eVҎ্ྼԽ͍ͯ͠Δɻ͜ΕΒͷΤωϧΪʔ෼ղೳ͔Βࣜ 2.31 Λ༻͍ͯϑΝϊϊΠζΛআ͍ͨશϊΠζ੒෼Λ֓ࢉ͢Δͱɺ−60◦ C, VBB = −200 V Ͱ͸ ∼ 15 e− , −15◦ C, VBB = −150 VͰ͸ ∼ 24 e− ʹ૬౰͢Δɻ͜ͷ஋͸ɺୈ 5 ষͰࣔͨ͠ೈ X ઢ‫ݕ‬ग़ੑೳͷཁ‫ٻ‬Λ࣮‫͢ݱ‬Δͨ
ΊʹඞཁͳΤωϧΪʔʹґଘ͠ͳ͍ϊΠζ (11 e− ) ΑΓ΋ඇৗʹେ͖͍ɻ͕ͨͬͯ͠ɺΤ

84

ୈ6ষ

PDD ߏ଄Λվྑͨ͠৽ૉࢠ XRPIX8(a) Gain Map

70

44

60
42

50
40

40

30

500

Counts/bin

46

80

Row Address(b) Gain Histogram-

90

Gain [uV/e ]ωϧΪʔ෼ղೳͷྼԽͷ‫ݪ‬ҼΛಥ͖ࢭΊΔͨΊʹɺಡΈग़͠ϊΠζ΍҉ిྲྀϊΠζͷଌఆ৚݅ʹΑΔมԽΛௐ΂Δඞཁ͕͋Δɻ

400

1.1 μV/e−in FWHM (2.4%)

300

200

38
20

100
36

10
10

20

30

40

50

60

Column Address

70

0

36

38

40

42

44

-

46

48

50

Gain [uV/e ]ਤ 6.9: XRPIX8 Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ɺϐΫηϧຖͷήΠϯ͹Β͖ͭɻ(a) ϐΫηϧຖͷήΠϯϚοϓɺ(b) ϐΫηϧຖͷήΠϯώετάϥϜɻ

6.3. ‫ج‬ຊੑೳධՁ

85

2.
5×
10
4
2×
10
4

238 eV in FWHM

10
4

1.
5×
10
4

182 eV in FWHM

1.
5×
10
4

Counts/bin

2×
10
4

2.
5×
10
4

6.4 keV10
4Counts/bin−15℃, VBB = −150 V

3×
10
4

3×
10
4

−60℃, VBB = −200 V

50
00

50
00

7.1 keV

0

2.5

5

7.5

10

Energy [keV]

12.5

15

0

0

14.4 keV
0

2.5

5

7.5

10

12.5

15

Energy [keV]ਤ 6.10: XRPIX8 Πϕϯτ‫ۦ‬ಈಡΈग़͠Ͱऔಘͨ͠ɺήΠϯิਖ਼‫ޙ‬ͷ 57 Co (ද໘রࣹ) ͷγϯάϧϐΫηϧΠϕϯτεϖΫτϧɻ

86

ୈ 7 ষ XRPIX8 Λ༻͍ͨϊΠζ‫ݯ‬ͷఆྔతௐࠪલষͷ‫ج‬ຊੑೳධՁʹΑΓɺXRPIX8 ͕ XRPIX6E ͱಉ౳ͷ෼ޫੑೳΛ༗͍ͯ͠Δ͜ͱ
Λࣔͨ͠ɻ͔͠͠ɺFORCE ͷಈ࡞Թ౓Ͱ͋Δ −15◦ C Ͱ͸ɺ‫ݦ‬ஶʹΤωϧΪʔ෼ղೳ͕ྼ
Խ͢Δ͜ͱ͕Θ͔ͬͨɻFORCE ͷೈ X ઢੑೳͷཁ‫ٻ‬Λຬͨ͢ʹ͸ɺ͜ͷྼԽͷ‫ݪ‬ҼΛಥ͖ࢭΊΔඞཁ͕͋Δɻͦ͜ͰɺΤωϧΪʔ෼ղೳʹ‫د‬༩͢Δ҉ిྲྀϊΠζͱಡΈग़͠ϊΠζͷఆྔతௐࠪΛߦ͏ɻຊষͰ͸֤ϊΠζ੒෼ʹ͍ͭͯ໌Β͔ʹͨ͠ͷͪɺ֤৚݅ͰͷϊΠζ੒෼ͷ੾Γ෼͚Λߦ͍ɺࠓ‫ޙ‬ͷ͞ΒͳΔੑೳ޲্ͷͨΊͷํࡦΛઆ໌͢Δɻ˙ 7.1

҉ిྲྀͷఆྔతධՁ

2.5.4 અͰड़΂ͨΑ͏ʹɺ҉ిྲྀϊΠζͱ͸ɺ࿐ޫ࣌ؒதʹ஝ੵͨ͠҉ిྲྀ༝དྷͷిՙ਺
√
NDark ͷϙΞιϯ౷‫ܭ‬తͳ͹Β͖ͭ NDark Ͱ͋Δɻ҉ిྲྀϊΠζΛఆྔతʹ‫ٻ‬ΊΔʹ͸ɺ
NDark Λௐ΂Ε͹Α͍ɻ୯Ґ࣌ؒ౰ͨΓʹऩू͞ΕΔҊిྲྀ༝དྷͷిՙྔͷฏ‫ۉ‬͸ɺσόΠε಺෦͕ఆৗঢ়ଶͰ͋Ε͹ҰఆͰ͋ΔɻͦͷͨΊɺಡΈग़ͨ͠ϖσελϧ͸ɺ࿐ޫ࣌ؒ
ʹൺྫͯ͠૿Ճ͢Δͱߟ͑ΒΕΔɻ͜ͷൺྫؔ܎ͷ܏͖͔Βɺ҉ిྲྀΛ‫ٻ‬ΊΔɻຊઅͰ͸ϑϨʔϜಡΈग़͠Ͱ࿐ޫ࣌ؒΛม͑ͯऔಘͨ͠ϖσελϧͷฏ‫ۉ‬஋Λ༻͍ͯɺ҉ిྲྀͷશϐΫηϧฏ‫ۉ‬Λௐ΂Δɻ

7.1.1 ϖσελϧͷ࿐ޫ࣌ؒඇઢ‫ܗ‬ੑ
ਤ 7.1 ʹ֤Թ౓৚݅ͰಘΒΕͨϖσελϧͷ࿐ޫ࣌ؒґଘੑΛࣔ͢ɻ͍ͣΕ΋όοΫό
ΠΞεిѹ VBB = −125 V ΛҹՃͯ͠ଌఆͨ͠ɻଌఆ࣌ɺX ઢ΍Մࢹޫ౳͸রࣹ͍ͯ͠ͳ
͍ͨΊɺ҉ిྲྀʹΑΔిՙ஝ੵΛ௚ʹ‫͍ͯݟ‬Δ͜ͱʹͳΓɺ࿐ޫ࣌ؒʹൺྫͯ͠ϖσελϧ͕૿Ճ͢Δͱߟ͑ΒΕΔɻ༧૝௨Γɺશମతʹ‫ݟ‬Δͱ࿐ޫ࣌ؒʹൺྫͯ͠ϖσελϧ͕
૿Ճ͢Δ܏޲͕͋Δɻ͔͠͠ɺ0–5 ms ෇ۙΛ֦େͨ͠ਤ 7.1(b) Λ‫ݟ‬Δͱɺ" 1 ms Ͱ͸ɺ࿐ޫ࣌ؒͷ૿Ճʹରͯ͠ϖσελϧ͕‫ݮ‬গ͍ͯ͠Δ͜ͱ͕Θ͔Δɻ·ͨɺϖσελϧͷ‫ݮ‬গͷ౓߹͍΋ɺଌఆ৚݅ʹΑΓҟͳΔͷ΋‫ͯݟ‬औΕΔɻ͜ͷৼΔ෣͍͸ɺ҉ిྲྀΛධՁ͢Δલʹཧղ͓ͯ͘͠ඞཁ͕͋Δɻͦ͜Ͱɺຊम࢜࿦จͰ͸ɺ͜ͷৼΔ෣͍Λʮϖσελϧ
ͷ࿐ޫ࣌ؒඇઢ‫ܗ‬ੑʯͱ໊෇͚ɺௐࠪΛߦͳͬͨɻ

7.1. ҉ిྲྀͷఆྔతධՁ

87

(a)

(b)
3000

Average Pulse Height [ADU]

Average Pulse Height [ADU]

3000

2500

2000

1500

25℃
15℃
0℃

1000
0

20

40

60

-15℃
-30℃
-60℃
80

2500

25℃
15℃
0℃
-15℃
-30℃
-60℃

2000

1500

1000
100

Integration Time [msec]

0

1

2

3

4

5

Integration Time [msec]

ਤ 7.1: XRPIX8 ϖσελϧͷ࿐ޫ࣌ؒґଘੑɻ͍ͣΕ΋ VBB = −125 V ΛҹՃͯ͠ଌఆΛߦͳͬͨɻϓϩοτ఺ͷ৭ͷҧ͍͸Թ౓ͷҧ͍Λද͓ͯ͠ΓɺͦΕͧΕ 1 ms Ҏ্ͷσʔλ఺Λ༻͍ͯҰ࣍ؔ਺ͰϑΟοτ͠ɺͦͷ݁ՌΛಉ͡৭ͷҰ఺࠯ઢͰࣔͨ͠ɻ(a) ͷ݁Ռʹ͍ͭͯɺ0–5 ms Λ֦େͨ͠΋ͷΛ (b) ʹද͍ͯ͠Δɻ(b) ͷബϐϯΫྖҬ͸Ұ࣍ؔ਺ͰϑΟοτ͢ΔൣғΛද͢ɻϖσελϧͷ‫ݮ‬গྔͱ૿Ճ཰ͷؔ܎ϖσελϧͷ‫ݮ‬গྔɾ૿Ճ཰ͱ΋ʹɺଌఆ৚݅ʹΑΓେ͖͘ҟͳΔ͜ͱ͔Βɺ͜ΕΒͷؔ࿈ੑΛௐ΂Δɻਤ 7.1 ʹ͍ͭͯɺ೾ߴ஋͕࿐ޫ࣌ؒʹൺྫͯ͠૿Ճ͢Δ 1 ms Ҏ্ͷσʔλΛҰ࣍ؔ਺ͰϑΟοτ͠ɺ࿐ޫ͕࣌ؒ࠷΋୹͍σʔλ (10 µs) ͷϖσελϧͱͦͷ੾ยͷࠩΛ ∆Ped ͱఆٛ͢Δɻ∆Ped ͸೾ߴ஋ͷ‫ݮ‬গྔɺϑΟοτͨ͠Ұ࣍ؔ਺ͷ܏͖͸҉ిྲྀΛද͍ͯ͠Δͱߟ͑ΒΕΔɻҟͳΔԹ౓ɾVBB ͷ૊Έ߹ΘͤͰଌఆͨ͠ɺ܏͖ͱ ∆Ped ͷؔ܎Λਤ 7.2 ʹࣔ͢ɻ܏͖ͱ ∆Ped ʹ͸ɺ‫͍ڧ‬ਖ਼ͷ૬͕ؔ͋Δ͜ͱ͕Θ͔ͬͨɻ͜ͷ݁Ռ
͸ɺ∆Ped ͕ɺϖσελϧͷ૿Ճ཰ɺ͢ͳΘͪ҉ిྲྀͱؔ࿈͍ͯ͠Δ͜ͱΛ‫ࠦࣔ͘͢ڧ‬Δɻ

Πϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δϖσελϧͷ࿐ޫ࣌ؒґଘੑΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ΋ɺϖσελϧͷ࿐ޫ࣌ؒґଘੑͷௐࠪΛߦ͏ɻϑϨʔϜಡΈग़͠ͱ͸ҟͳΓɺώοτλΠϛϯάͰ࿐ޫ͕ܾ࣌ؒ·ΔͨΊɺX ઢΛরࣹ͠ɺτϦΨग़ྗʹΑΓಘΒΕͨλΠϛϯά৘ใͱɺͦͷ࣌ಡΈग़ͨ͠ϖσελϧ͔ΒධՁ͢Δɻ࿐ޫ࣌ؒ
͸ɺ࿐ޫ։࢝ͷλΠϛϯάͱτϦΨग़ྗͨ͠λΠϛϯάͷࠩʹ STORE OFF TIME= 10 µsΛՃ͑ͨ࣌ؒʹ૬౰͢Δɻϖσελϧͱͯ͠ɺಡΈग़ͨ͠ 8 × 8 ϐΫηϧͷϖσελϧͷ
தԝ஋Λ࠾༻͢Δɻಉ͡ଌఆ৚݅ͰಘΒΕͨϑϨʔϜಡΈग़͠ͷ݁Ռͱ߹Θͤͯϓϩοτͨ݁͠ՌΛਤ 7.3 ʹࣔ͢ɻΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ɺϑϨʔϜಡΈग़͠Ͱ‫ݟ‬ΒΕͨΑ͏ͳ೾ߴ஋ͷ‫ݮ‬গ͸‫ݟ‬ΒΕͣɺ΄΅ઢ‫૿ʹܗ‬Ճ͍ͯ͠ΔɻΠϕϯτ‫ۦ‬ಈಡΈग़͠ͱϑϨʔϜಡΈग़͠ͷಈ࡞ͷҧ͍ʹ௚઀తͳ‫ݪ‬Ҽ͕͋Δͱߟ͑ΒΕΔɻ

88

ୈ 7 ষ XRPIX8 Λ༻͍ͨϊΠζ‫ݯ‬ͷఆྔతௐࠪ

ΔPed [ADU]

1000

25○C
0○C
−15○C

100

10

1
1

10

100

1000

Slope [ADU/msec]

ਤ 7.2: ࿐ޫ࣌ؒʹର͢Δϖσελϧͷ૿Ճ཰ͱϖσελϧͷ‫ݮ‬গྔͷؔ܎ɻ৭ͷҧ͍͸Թ౓৚݅ͷҧ͍Λද͓ͯ͠ΓɺͦΕͧΕͷ৭ͷσʔλ఺͸ෳ਺ͷ VBB ͰධՁͨ݁͠ՌΛࣔ
͍ͯ͠ΔɻϦηοτλΠϛϯάͷมߋ࿐ޫ։࢝௚‫ʹޙ‬೾ߴ஋͕େ͖͘‫ݮ‬গ͢Δ͜ͱ͔ΒɺϦηοτ࣌ͷಈ࡞ʹண໨͠ɺϦηοτλΠϛϯάͷมߋʹΑΔৼΔ෣͍ͷมԽΛϑϨʔϜಡΈग़͠Ͱௐࠪͨ͠ɻෳ਺ͷϦηοτλΠϛϯάΛมߋͨ͠தͰɺRST PD Ҏ֎ͷλΠϛϯάΛશͯ 500 µs ஗ΒͤͨμΠΞάϥϜͱϖσελϧͷ࿐ޫ࣌ؒґଘੑΛਤ 7.4 ʹࣔ͢ɻRST PD ͸ High ʹ͢Δ࣌ؒΛ௕͘
͢Δ͜ͱͰɺ೾ߴ஋ͷ‫ݮ‬গ͕‫ݟ‬ΒΕͳ͘ͳΔɻRST PD ͸ηϯεϊʔυͷϦηοτߦ͏໾ׂΛ΋ͭͨΊɺ͜ͷϦηοτ͕࣌ؒ୹͍͜ͱ͕‫ݪ‬ҼͰ͋Δͱਪଌ͞ΕΔɻ‫ݪ‬Ҽͷਪଌͱղܾࡦ
Ҏ্ͷௐࠪΛ΋ͱʹɺ೾ߴ஋ͷ࣌ؒ‫ݮ‬গ໰୊ͷ‫ݪ‬Ҽʹ͍ͭͯߟ࡯͢Δɻϖσελϧͷ‫ݮ‬গྔ͕҉ిྲྀͱؔ࿈͍ͯ͠Δ͜ͱɺηϯεϊʔυͷϦηοτ࣌ؒΛ௕͘औΔ͜ͱͰղܾ͢
Δ͜ͱ͔Βɺऩूͨ͠҉ిྲྀ༝དྷͷిՙྔ͕‫ݪ‬ҼͰ͸ͳ͍͔ͱߟ͑ͨɻ‫ࡏݱ‬ͷಈ࡞Ͱ͸ɺ࿐ޫ։࢝લ͔Βɺ࿐ޫதɺͦͯ͠ɺ֤ϐΫηϧͷ৴߸ΛಡΈग़͠Λऴ͑Δ·ͰɺRST PD
Λ Low ʹͨ͠··Ͱ͋ΔɻͦͷͨΊɺྫ͑͹ɺશ໘ (96 × 96 ϐΫηϧ) ΛϑϨʔϜϞʔυͰಡΈग़͢৔߹ɺ∼ 45 ms ΋ͷؒɺ҉ిྲྀʹΑΔిՙ͕ηϯεϊʔυʹऩू͞Εଓ͚Δ͜
ͱʹͳΔɻ๲େͳిՙ஝ੵΛϦηοτͰ͖ͳ͍··࣍ͷ࿐ޫ͕࢝·ͬͯ͠·͍ɺ͜ͷ‫ݱ‬৅͕‫͜ى‬Δͱߟ͑ΒΕΔɻҰํɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ 64 ϐΫηϧ͔͠ಡΈग़͞ͳ͍

7.1. ҉ిྲྀͷఆྔతධՁ

89

1380

Pulse Height [ADU]

1370

1330
Frame
Event-Driven
1320
0

200

400

600

800

1000

Integration Time [μs]

ਤ 7.3: ϑϨʔϜಡΈग़͠ͱΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱͷ೾ߴ஋ͷ‫ݮ‬গྔͷൺֱɻΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ɺॎ࣠ʹಡΈग़ͨ͠೾ߴ஋ͷϖσελϧΛऔΔͨΊɺ8 × 8 ϐΫηϧͷ
ϖσελϧͷதԝ஋Λ࠾༻͍ͯ͠Δɻ͍ͣΕ΋ −15◦ C, VBB = −150 V ͷ৚݅ͰσʔλΛऔಘ͍ͯ͠Δɻ
(a) 変更前ScanReset Comparator Reset CDS(c) 3000
①
②

STORE
10 µs

RST_CDS
RST_VTH

10 µs

RST_COMP1

12 µs

RST_COMP2

16 µs(b) 変更後ScanReset Comparator

Reset CDSSTORE
RST_PD500 µs

10 µs

Average Pulse Height [ADU]2750

RST_PD

2500

)
(b

2250

後

更

変

2000

)
(a

1750

前

更

変

1500

RST_CDS
RST_VTH
RST_COMP1
RST_COMP2

10 µs
12 µs
16 µs

1250
0

5

10

15

20

Integration Time [msec]

ਤ 7.4: RST PD ͷλΠϛϯάͷมߋલ‫͚͓ʹޙ‬Δɺ(a), (b) λΠϛϯάμΠΞάϥϜͷൺֱͱ (c) ϖσελϧͷ࿐ޫ࣌ؒґଘੑͷൺֱɻ

90

ୈ 7 ষ XRPIX8 Λ༻͍ͨϊΠζ‫ݯ‬ͷఆྔతௐࠪ

ͨΊɺ1 Πϕϯτ͋ͨΓͷಡΈग़࣌ؒ͠͸ ∼ 300 µs ͱे෼୹͍ͨΊɺ҉ిྲྀͷͨΊʹ஝ੵ͢Δిՙ͸গͳ͍ɻͦͷͨΊɺ೾ߴ஋ͷ‫ݮ‬গ͕‫ݟ‬ΒΕͳ͔ͬͨͱߟ͑ΒΕΔɻͦ΋ͦ΋ͳͥ೾ߴ஋͕‫ݮ‬গ͢Δͷ͔͸‫ݱ‬ঢ়Θ͔͍ͬͯͳ͍ɻ·ͨɺRST PD Λ Low ʹͨ͠‫ޙ‬΋೾ߴ஋͕‫ݮ‬গ͢Δ͜ͱ͔Βɺηϯεϊʔυ͔Βిࢠ͕ྲྀग़͍ͯ͠Δ͜ͱΛҙຯ͢
Δ͕ɺͦͷ‫ܦ‬࿏΋ෆ໌Ͱ͋Δɻࠓ‫ޙ‬͸͜ͷ‫ݱ‬৅ͷཧղ͕՝୊Ͱ͋Δɻ‫ݪ‬Ҽ͸Θ͔Βͳ͍΋ͷͷɺ໰୊Λղܾ͢Δख๏͸໌Β͔ʹͰ͖ͨɻ࠷΋؆୯ͳͷ͸ɺ
RST PD ͷϦηοτ࣌ؒΛ௕͘͢Δ͜ͱͰ͋Δɻ͔͠͠ɺ1 ϑϨʔϜ͝ͱͷϦηοτ࣌ؒΛ௕͘͢Δ͜ͱ͸ෆ‫ؒ࣌ײ‬Λ௕͘͢Δ͜ͱʹ΋ͳΔͨΊɺద੾Ͱ͸ͳ͍ɻͦ͜Ͱɺෆ‫࣌ײ‬ؒΛม͑ͣʹ໰୊ΛղܾͰ͖Δ৽ͨͳϦηοτ੍‫ޚ‬ΛఏҊ͢Δɻ৽ͨͳϦηοτ੍‫ޚ‬ͷλΠϛϯάμΠΞάϥϜΛਤ 7.5(b) ʹࣔ͢ɻಡΈग़͠ͷಈ࡞ʹೖΔͱ͖ʹ RST PD Λ Highʹ͢Δ͜ͱͰɺಡΈग़͠ͷؒ΋ηϯεϊʔυΛϦηοτ͢Δ͜ͱ͕ՄೳʹͳΔɻ͜ͷͱ͖ɺSTORE ͸ OFF ʹ͍ͯ͠ΔͨΊɺRST PD ͷಈ࡞ʹΑΔిҐͷมԽ͸‫ޙ‬ஈʹ͸఻ΘΒͳ͍ɻ࣮ࡍʹਤ 7.5(b) ͷλΠϛϯάμΠΞάϥϜͷಈ࡞ʹͳΔΑ͏ʹ FPGA ͷϑΝʔϜ΢ΣΞΛॻ͖‫͑׵‬ɺϖσελϧͷ࿐ޫ࣌ؒґଘੑΛଌఆͨ݁͠ՌΛਤ 7.5(c) ʹࣔ͢ɻ‫ݦ‬ஶͳ೾ߴ஋ͷ‫ݮ‬গ͸‫ݟ‬ΒΕͣɺ໰୊ΛղܾͰ͖Δ͜ͱΛ࣮ূͨ͠ɻ
(a) 従来のリセット制御
Scan

(c)

3000

Reset Comparator Reset CDS

~

Expo

RST_PD

10 µs

RST_CDS
RST_VTH

10 µs

RST_COMP1

12 µs

RST_COMP2

16 µs(b) 新たなリセット制御
Scan

Reset Comparator Reset CDS

~

Expo

STORE
RST_PD

10 µs

Average Pulse Height [ADU]

2750

STORE

2500

御
制

ト

ッ

セ
リ

な
た

2250

)新
(b

2000

1750

(a

)従

セ

リ

の

来

御

制

ト

ッ

1500

RST_CDS
RST_VTH
RST_COMP1
RST_COMP2

10 µs
12 µs
16 µs

1250
0

5

10

15

20

Integration Time [msec]

ਤ 7.5: ैདྷͷϦηοτ੍‫ࠓͱޚ‬ճఏҊ͢Δ৽ͨͳϦηοτ੍‫͚͓ʹޚ‬Δɺ(a), (b) λΠϛϯάμΠΞάϥϜͷൺֱͱ (c) ϖσελϧͷ࿐ޫ࣌ؒґଘੑͷൺֱɻ

7.1.2 ҉ిྲྀͷධՁͱٞ࿦
࣍ʹɺ҉ిྲྀΛධՁ͢Δɻ2.5.4 અͰߦͳͬͨߟ࡯ʹΑΓɺԹ౓ T ɺۭ๡૚ް W ʹର͢
Δґଘੑ͔Β҉ిྲྀ‫ݯ‬Λ੾Γ෼͚ΔͨΊʹɺԹ౓ґଘੑͱɺۭ๡૚ްΛܾΊΔόοΫόΠ
Ξεిѹ VBB ґଘੑΛௐ΂Δɻ҉ిྲྀͷԹ౓ґଘੑʹ͍ͭͯɺෳ਺ͷ VBB Λ༻͍ͯଌఆͨ݁͠ՌΛਤ 7.6 ʹࣔ͢ɻ·ͣɺ͍ͣΕͷ VBB Ͱ΋௿ԹଆͰ 10 e− /(ms · pixel) ఔ౓ͷԼ͛ࢭ·Γ͕͋Δ͜ͱ͕Θ͔Δɻ͜

7.2. CSA ճ࿏ϊΠζͷཧ࿦తߟ࡯

91Ε͸ɺ΄΅ಉ͡ PDD ߏ଄Λ΋ͭɺSOIPIX-PDD ૉࢠͰ΋ใࠂ͞Ε͍ͯΔ [49]ɻԼ͛ࢭ·Γͷ‫ݪ‬ҼͷՄೳੑͷҰͭͱͯ͠ɺਤ 3.5 ʹࣔͨ͠ RST PD τϥϯδελ͔ΒͷϦʔΫిྲྀ͕ٞ࿦͞Ε͍ͯΔɻMOSFET ʹ͓͚ΔϦʔΫిྲྀͷओͳཁҼͰ͋Δ͜ͱ͕஌ΒΕ͍ͯΔ
ʮτϥοϓɾΞγετɾτϯωϦϯάʯ͸Թ౓ґଘੑ͕খ͍ͨ͞ΊͰ͋ΔɻҰํͰɺߴԹ
ଆͷ҉ిྲྀ͸Թ౓্ঢʹ൐͍Թ౓ͷ‫ʹ਺ٯ‬ରͯ͠ࢦ਺ؔ਺తʹେ͖͘ͳΔɻ͜ͷԹ౓ґଘ!
"Egੑ͸ ∝ exp −ͰΑ͘આ໌Ͱ͖Δɻ2.5.4 અͰࣔͨ͠௨ΓɺDiﬀusion Dark Current ͸
2k
T
B
!
"
!
"
Eg
Eg
∝ exp −
Ͱ͋ΓɺSurface Dark Current ͱ Depletion Dark Current ͸ ∝ exp −
Ͱ
kB T
2kB T
͋ΔͨΊɺSurface Dark Current ΋͘͠͸ Depletion Dark Current ͕ࢧ഑తͩͱߟ͑ΒΕΔɻ࣍ʹ VBB ʹର͢Δ҉ిྲྀͷґଘੑΛௐ΂Δɻෳ਺ͷԹ౓Ͱଌఆͨ݁͠ՌΛਤ 7.7 ʹࣔ͢ɻߴԹ΄ͲɺVBB ʹରͯ͠‫ٸ‬फ़ʹมԽ͢Δ͜ͱ͕Θ͔Δɻಛʹ 0◦ C Ͱ͸ ∝ |VBB |2 ɺ25◦ C Ͱ͸
∝ |VBB |5/2 ͷґଘੑΛ΋ͭɻ6.2.2 અͰௐࠪͨ͠Α͏ʹɺۭ๡૚ް͸ࣜ 2.14 Ͱ΄ͱΜͲ࠶‫ݱ‬
Ͱ͖ΔͨΊɺ͜ͷ҉ిྲྀͷ‫ٸ‬फ़ͳมԽ͸ۭ๡૚ްͷ VBB ґଘੑͰ͸આ໌Ͱ͖ͳ͍ɻ
‫ݱ‬ঢ়ɺߴԹ͔ͭେ͖͍ VBB Ͱࢧ഑తͳ҉ిྲྀ‫ݯ‬ͷಛఆʹ͸ࢸ͍ͬͯͳ͍ɻগͳ͘ͱ΋ࠓճͷ݁Ռ͸ɺSurface Dark Current ΋͘͠͸ Depletion Dark Current ʹ VBB ʹ‫͘ڧ‬ґଘ͢Δύϥϝʔλ͕ଘࡏ͢Δɺ͋Δ͍͸ߟྀ͍ͯ͠ͳ͍৽ͨͳ҉ిྲྀ‫͕ݯ‬ଘࡏ͢Δ͜ͱΛ͍ࣔࠦͯ͠Δɻྫ͑͹ɺSurface Dark Current ͸ Si/SiO2 ք໘Λ෴͏Α͏ʹ‫ܗ‬੒ͨ͠ BPW ʹΑΓ཈੍Ͱ͖Δͱ 4.1 અͰड़΂ͨɻ͔͠͠ɺVBB Λେ͖͘͢ΔͱɺBPW ͱηϯεϊʔυؒͷ Si/SiO2 ք໘͕ۭ๡Խ͢Δ͜ͱͰɺͦ͜Ͱൃੜ͢Δ Surface Dark Current ͕‫ࡏݦ‬Խ͢Δ͜ͱ΋͋ΓಘΔɻ·ͨɺ6.2.1 અͰൃ֮ͨ͠ɺ‫ݪ‬Ҽෆ໌ͷϦʔΫిྲྀͱͷؔ࿈ੑ΋ௐࠪ
͢Δඞཁ͕͋ΔɻϦʔΫిྲྀͱ҉ిྲྀͷԹ౓ґଘੑͷࢦ਺෦෼͸ͦΕͧΕ −0.23 eV/kB T ɺ−0.56 eV/2kB T ͱ 2 ഒҎ্ҟͳΔɻͦͷͨΊɺ͜ΕΒ͸ҟͳΔ෺ཧͰ͋Δͱਪଌ͍ͯ͠Δɻ͞ΒͳΔ‫ݕ‬౼ΛਐΊΔʹ͸ɺσόΠεγϛϡϨʔγϣϯΛ༻͍ͨηϯεϊʔυपลͷి৔ߏ଄ͷௐ͕ࠪඞཁͰ͋Δɻ

˙ 7.2

CSA ճ࿏ϊΠζͷཧ࿦తߟ࡯

7.2.1 CSA ճ࿏ϊΠζͷཧ࿦
CSA ճ࿏͸ηϯεϊʔυͷ‫د‬ੜ༰ྔ͔ΒͷӨ‫ڹ‬Λখ͘͞͠ɺେ͖ͳήΠϯΛಘΒΕΔ
ͱ͍͏఺Ͱ༗༻Ͱ͋Δɻ3.2.1 અͰࣔͨ͠௨Γɺզʑ͸ CSA ճ࿏Λಋೖ͢Δ͜ͱͰॳஈͷήΠϯΛେ෯ʹ޲্ͤ͞ɺಡΈग़͠ϊΠζͷ௿‫ʹݮ‬੒ޭͨ͠ɻҰํͰɺCSA ճ࿏ࣗ਎΋ϊΠζΛൃੜ͢Δɻ͜Ε͸ɺXRPIX ͷ͞ΒͳΔ෼ޫੑೳ޲্ʹ޲͚ͯ໰୊ͱͳΓ͏Δɻຊ
અͰ͸ɺCSA ճ࿏ͷϊΠζʹ͍ͭͯఆྔతͳߟ࡯Λߦ͏ɻ
ਤ 7.8 ʹ CSA ճ࿏ͷ౳Ձճ࿏Λࣔ͢ɻ༻͍ΒΕ͍ͯΔ NMOS ͱ PMOS ͕ओͳϊΠζ‫ݯ‬
ͱͳΔɻMOSFET Ͱൃੜ͢ΔओཁͳϊΠζ͸ɺ2.5.3 અͰ঺հͨ͠೤ϊΠζͱ 1/ f ϊΠζ
Ͱ͋Δɻ͜ΕΒͷϊΠζ͸ CSA ճ࿏ɺCDS ճ࿏Λհͯ͠‫ޙ‬ஈʹ఻ΘΔͨΊɺCSA ճ࿏ͱ
CDS ճ࿏ͷप೾਺ಛੑΛ൓өͨ͠΋ͷ͕ग़ྗ͞ΕΔɻCDS ճ࿏ͷग़ྗͰɺશप೾਺Ͱฏ
‫ͨ͠ۉ‬ϊΠζͷిѹදࣔ (ฏ‫ۉ‬ೋ৐ϊΠζ, vout 2 ) Λ‫ٻ‬ΊΔɻNMOS ͱ PMOS ͷϊΠζ‫ݯ‬͸ແ૬ؔͰ͋Δ͔ΒɺͦΕͧΕͷϊΠζͷ‫د‬༩ͷ߹‫ܭ‬͸࣍ࣜͷΑ͏ʹදͤΔɻୈ 7 ষ XRPIX8 Λ༻͍ͨϊΠζ‫ݯ‬ͷఆྔతௐࠪ

Average Dark Current [e-/msec/pixel]

92

104
25℃

VB

B

15℃

1000

VB

B

VB

100

B

=

=

=

VBB = -125 V
VBB = -50 V
VBB = -5 V

−1
25
V
0℃

−5
0

V

−15℃

−5
V
−30℃

10

1

−60℃

const = 10 e−/msec/pixel

3.25

3.5

3.75

4

4.25

4.5

4.75

1000/T [/K]

ਤ 7.6: XRPIX8 ҉ిྲྀͷԹ౓ґଘੑɻϓϩοτ఺ͷ৭ͷҧ͍͸ VBB ͷҧ͍Λ͍ࣔͯ͠Δɻ҉ిྲྀʹ͍ͭͯɺԹ౓ʹରͯ͠ࢦ਺ؔ਺తʹมԽ͢ΔྖҬΛਫ৭ɺԹ౓ʹґଘ͠ͳ͍ྖҬΛബϐϯΫͰ͍ࣔͯ͠Δɻ

Average Dark Current [e-/msec/pixel]

104

25℃
1000

0℃
1/2

100

∝ | VBB |1/2∝ | VBB |

−15℃

10

5/2

1

∝

|
BB
V
|

∝

−60℃

2

|V

|

BB

10

100

-VBB [V]ਤ 7.7: XRPIX8 ҉ిྲྀͷ VBB ґଘੑɻϓϩοτ఺ͷ৭ͷҧ͍͸Թ౓ͷҧ͍Λ͍ࣔͯ͠Δɻ

7.2. CSA ճ࿏ϊΠζͷཧ࿦తߟ࡯

93

〜
vN_p

gm_p

go_p

CFB

CD

Ci

vout
gm_n

〜
vN_n

go_n
CSH

ਤ 7.8: CSA ճ࿏ͷϊΠζʹର͢Δ౳Ձճ࿏ɻ

2

vout =

4* ∞

η=n,p

0

(
(2
dω
S N η (ω) ((HCSA η (ω)(( |HCDS (ω)|2
2π

(7.1)

͜͜Ͱɺω = 2π f ͸प೾਺ɺS N n (ω), S N p (ω) ͸ͦΕͧΕ NMOS, PMOS ͷϊΠζͷύϫʔεϖΫτϧɺHCSA n (ω), HCSA p (ω) ͸ͦΕͧΕ NMOS, PMOS ʹର͢Δ CSA ճ࿏ͷ఻ୡؔ
਺ɺHCDS (ω) ͸ CDS ಈ࡞ͷ఻ୡؔ਺Ͱ͋ΔɻS N (ω), HCSA (ω), HCDS (ω) Λಋग़Ͱ͖Ε͹ϊΠζΛ‫͢ࢉܭ‬Δ͜ͱ͕Ͱ͖ΔɻҎԼͰɺͦΕͧΕͷಋग़Λॱʹߦ͏ [22, 49, 64, 65, 66]ɻͳ
͓ɺຊઅͰ༻͍Δఴࣈ η ͸ n, p ͷ͍ͣΕ͔Λද͠ɺͦΕͧΕ NMOS, PMOS Λҙຯ͢Δͱ
͢Δɻ

ϊΠζͷύϫʔεϖΫτϧ S N (ω)ϊΠζͷύϫʔεϖΫτϧ S N η (ω) ͸ҎԼͷΑ͏ʹ೤ϊΠζͱ 1/ f ϊΠζͦΕͧΕͷύϫʔεϖΫτϧ S th η (ω), S f η (ω) ͷ࿨ͰදͤΔɻS N η (ω) = S th η (ω) + S f η (ω) = 4kB T ξη

1
gm η

+

Nf η
, (η = n, p)
f

(7.2)

ξη ͸ա৒೤ϊΠζ܎਺ɺgm η ͸૬‫ޓ‬ίϯμΫλϯεͰ͋Δɻ·ͨɺNf η ͸ 2.5.3 અͰࣔͨ͠Α͏ʹɺҎԼͷΑ͏ʹදͤΔɻ
Nf η =KFη
, (η = n, p)
2
2µCOX
Lη Wη

KFη ͸ 1/ f ϊΠζ܎਺ɺLη , Wη ͸ͦΕͧΕνϟϯωϧ௕ɺνϟϯωϧ෯Ͱ͋Δɻ

(7.3)

94

ୈ 7 ষ XRPIX8 Λ༻͍ͨϊΠζ‫ݯ‬ͷఆྔతௐࠪCSA ճ࿏ͷ఻ୡؔ਺ HCSA (ω)
CSA ճ࿏ʹ͓͍ͯɺMOSFET ͷϊΠζʹΑΔυϨΠϯɾιʔεؒిྲྀͷมԽʹΑΓ༠‫ى‬͞ΕΔήʔτͷిҐͷมԽͷ͏ͪɺप೾਺ ω ੒෼Λ vN η (ω) ͱ͢ΔɻυϨΠϯɾιʔεؒిྲྀͷप೾਺ ω ੒෼͸ vN η (ω) Λ༻͍ͯ gm η vN η (ω) ͱදͤΔɻਤ 7.8 ͷ౳Ձճ࿏ΑΓɺNMOS,PMOS ͦΕͧΕͷϊΠζʹΑΔ CSA ճ࿏ͷग़ྗిѹͷมԽͷप೾਺ ω ੒෼ vout η (ω) ͸ɺvout n (ω) = −gm n vN n (ω) ×vout p (ω) = +gm p vN p (ω) ×

1+,
βF gm n + go n + go p + iω {(Ci + CD ) ∥ CFB + CSH }1+,
βF gm n + go n + go p + iω {(Ci + CD ) ∥ CFB + CSH }

(7.4)

(7.5)

2
COX Ln Wn ͸ CSA ճ࿏ͷೖྗ༰ྔ
3
ͰɺNMOS ͷήʔτɾιʔεؒ༰ྔʹ૬౰͢ΔɻCD ͸ηϯα༰ྔɺCFB ͸ϑΟʔυόοΫΩϟύγλͷ༰ྔɺCSH ͸αϯϓϧɾϗʔϧυΩϟύγλͷ༰ྔͰ͋Δɻ͋Δ௚ྻͳ༰ྔ C1 , C2 ͷ߹੒༰ྔΛ C1 ∥ C2 Ͱද͢΋ͷͱ͢Δɻ·ͨɺϑΟʔυόοΫఆ਺ βF Λ࣍ࣜͰఆٛ͢Δɻ
CFB
βF ≡
(7.6)
Ci + CD + CFB
ͱදͤΔɻ͜͜Ͱɺgo η ͸ग़ྗίϯμΫλϯεɺCi =ϑΟʔυόοΫఆ਺ͷ෺ཧతҙຯ͸ɺϊΠζʹΑΔ CSA ճ࿏ͷग़ྗిѹͷมԽʹରͯ͠ೖྗஈͷిѹʹϑΟʔυόοΫ͕͔͔Δׂ߹Λࢦ͓ͯ͠ΓɺͦΕʹΑΓ༠‫͞ى‬ΕΔ࣮ޮతͳ૬‫ޓ‬ίϯμΫλϯεͷมԽ͕ࣜ 7.4, 7.5 ͷ෼฼ୈҰ߲ʹ‫ݱ‬Ε͍ͯΔɻҎ্ΑΓɺCSA ճ࿏ͷ఻ୡؔ਺͸ɺ

vout n (ω)
1−1≃vN n (ω)βF 1 + iω/ωCSA(7.7)

vout p (ω) gm p 1
1≃vN p (ω)
gm n βF 1 + iω/ωCSA(7.8)

HCSA n (ω) =HCSA p (ω) =ͱͳΔɻ͜͜Ͱ͸ɺgm n ≫ go n +go p ΛԾఆͨ͠ɻCSA ճ࿏ͷΧοτΦϑप೾਺ ωCSA = τ−1
CSAΛ࣍ࣜͰఆٛ͢Δɻ
βF gm n
ωCSA ≡ τ−1
(7.9)
CSA ≡
(Ci + CD ) ∥ CFB + CSH

CDS ճ࿏ͷ఻ୡؔ਺ HCDS (ω)
XRPIX Ͱ͸ɺ࿐ޫ։࢝࣌ͱ࿐ޫ‫͚͓ʹޙ‬Δ೾ߴ஋ͷࠩΛαϯϓϦϯά͢Δɻిѹ஋ͷप೾਺ ω ੒෼ʹண໨͢Δͱɺ͜ͷ 2 ͭͷλΠϛϯάͷִ࣌ؒؒ T CDS ͷؒʹҐ૬͕ ωT CDS ͚ͩਐΉɻCDS ಈ࡞ʹ͓͚Δೖྗిѹͱग़ྗిѹͷप೾਺ ω ੒෼ΛͦΕͧΕ vin (ω), vout (ω)ͱ͢Δͱɺ
vout (ω) = vin (ω) − vin (ω)eiωTCDS(7.10)

7.2. CSA ճ࿏ϊΠζͷཧ࿦తߟ࡯

95

ͱॻ͚Δɻ͕ͨͬͯ͠ɺCDS ಈ࡞ͷ఻ୡؔ਺͸ɺ

HCDS (ω) =vout (ω)= 1 − eiωTCDS
vin (ω)(7.11)

ͱͳΔɻ

ೖྗ‫ࢉ׵‬ϊΠζҎ্ͷ݁ՌΛࣜ 7.1 ʹ୅ೖ͢Δ͜ͱͰɺvout 2 Λ‫ٻ‬ΊΔɻৄࡉͳ‫ࢉܭ‬͸෇࿥ A.3 ʹͯߦ͍ɺ͜͜Ͱ͸݁ՌͷΈࣔ͢ͱɺ࣍ࣜͷΑ͏ʹͳΔɻ
8
!
"9
1
1
Nf n
T CDS
2
vout ≃ 2γth kB T ξn
+ 2γf 2 ε + ln
(7.12)
gm n β2F τCSA
τCSA
βF
͜͜Ͱɺε = 0.577 ͸ΦΠϥʔఆ਺Ͱ͋Δɻ܎਺ γth , γf ͸ͦΕͧΕ࣍ࣜͰఆٛ͢Δɻγth ≡ 1 +

ξp gm p
Nf p g2m p, γf ≡ 1 +ξn gm nNf n g2m n(7.13)

γth , γf ͸ɺNMOS ϊΠζʹՃ͑ͯ PMOS ͷϊΠζͷ‫د‬༩Λߟྀͨ࣌͠ʹɺ೤ϊΠζͱ 1/ fϊΠζ͕ͦΕͧΕԿഒʹͳΔ͔Λද͢܎਺Ͱ͋ΔɻϊΠζΛఆྔతʹѻ͏ࡍʹศརͳೖྗ
‫ࢉ׵‬ϊΠζʹॻ͖‫͑׵‬Δͱɺ
√ $
8
!
"9
v
2
1
1
Nf n
T CDS
out
−
Noise [e ] =≃γth kB T ξn
+ γf 2 ε + ln
(7.14)GCSA GCSA
gm n β2F τCSA
τCSAβF
ͱͳΔɻGCSA ͸ CSA ճ࿏ͷΫϩʔζυɾϧʔϓɾήΠϯͰ͋Δɻࣜ 3.3 ΑΓɺGCSA ͸࣍ࣜͷΑ͏ʹදͤΔɻq!
"
GCSA =(7.15)
1
1(CD + Ci ) + 1 +
CFB
ACS
ACS

7.2.2 CSA ճ࿏ϊΠζͷཧ࿦‫ࢉܭ‬஋
ࣜ 7.14 Λ༻͍ͯɺCSA ճ࿏ϊΠζͷཧ࿦‫ࢉܭ‬Λߦ͏ɻ‫ࢉܭ‬Λߦ͏ʹ͋ͨΓɺCD ͱ CFB
͕ະ஌Ͱ͋Δɻͦ͜Ͱɺࣜ 7.14 ͱࣜ 7.15 Λ࿈ཱͯ͠ CFB Λফ‫͠ڈ‬ɺෳ਺ͷ CD ͰϊΠζΛ‫͢ࢉܭ‬Δɻ
࢖༻ͨ͠ύϥϝʔλΛද 7.1 ʹ·ͱΊΔɻ͜͜ͰɺGCSA ͸ XRPIX8 Ͱ‫ٻ‬ΊͨૉࢠήΠϯ 43.9 µV/e− ͔Β‫ٻ‬ΊΔɻૉࢠήΠϯ͸ GCSA ͱ SF ճ࿏΍पลճ࿏ͷήΠϯͷੵͰද
ͤΔɻSF ճ࿏ɺपลճ࿏͸ XRPIX6E ͷ΋ͷͱ‫ڞ‬௨Ͱ͋ΔͨΊɺXRPIX6E ͷૉࢠήΠϯ44.1 µV/e− ͱ 5.3.2 અͰௐ΂ͨτϦΨճ࿏ೖྗஈ·ͰͷήΠϯ 48.0 µV/e− ͷൺ (= 0.919)
Λ SF ճ࿏ͱपลճ࿏Λ߹ΘͤͨήΠϯͱͯ͠࠾༻͢ΔɻΑͬͯɺGCSA = 47.8 µV/e− ͱ
ͳΔɻ

96

ୈ 7 ষ XRPIX8 Λ༻͍ͨϊΠζ‫ݯ‬ͷఆྔతௐࠪ

Ҏ্ͷύϥϝʔλΛ࢖༻͠ɺCSA ճ࿏ϊΠζͷԹ౓ґଘੑɺT CDS ґଘੑɺCD ґଘੑͷཧ࿦‫݁ࢉܭ‬ՌΛਤ 7.9 ʹࣔ͢ɻզʑ͕௨ৗ༻͍ΔԹ౓ൣғ಺Ͱ͸ɺԹ౓ʹ͸΄ͱΜͲґଘ͠ͳ͍ɻ೤ϊΠζͷΈ͕Թ౓ґଘੑΛ࣋ͨͣɺ͔ͭɺͦͷґଘੑ΋ߴʑ∝ T 1/2 Ͱ͋ΔͨΊͰ͋Δɻ·ͨɺT CDS ʹ΋‫͘ڧ‬͸ґଘ͠ͳ͍ɻΠϕϯτຖʹ࿐ޫ͕࣌ؒҟͳΔɺ͢ͳΘͪ
T CDS ͕Πϕϯτ͝ͱʹҟͳΔΠϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͍ͯɺΠϕϯτຖʹϊΠζϨϕϧ͕มԽ͢ΔΑ͏ͳ͜ͱ͸ͳ͍ͱ‫͑ݴ‬Δ1 ɻҰํɺCD ͷ૿Ճʹ‫͘ڧ‬ґଘͯ͠ϑϦοΧʔϊΠζ͕૿େ͢Δɻ͜Ε͸ɺϑΟʔυόοΫఆ਺ βF ͕ CD ʹΑΓେ͖͘มԽ͢ΔͨΊͰ͋Δɻ
ද 7.1: CSA ճ࿏ϊΠζͷ‫͢༻࢖ʹࢉܭ‬Δύϥϝʔλ·ͱΊɻ͜ͷ৘ใ͸ίϯϑΟσϯγϟ
ϧͰ͋Δɻ

˙ 7.3

ύϥϝʔλ

஋

ύϥϝʔλ

஋

COX
Ids
Ln
Lp
Wn
Wp
µe
µh

6 × 10−3 F · m−2

ξn
ξp
KFn
KFp
CFB
CSH
T CDS
GCSA

2/3
2/3
1.11 × 10−27 A · F
4.21 × 10−28 A · F
2.7 fF240 fF
1 ms
47.8 µV/e−

2 µA
1 µm
5 µm
1 µm
1 µm
6 × 102 cm2 · V−1 · s−12 [67]
2 × 102 cm2 · V−1 · s−13 [67]ϊΠζ‫ݯ‬ͷ੾Γ෼͚લઅ·ͰͰɺXRPIX ʹ͓͚ΔओཁͳϊΠζ੒෼Ͱ͋Δ҉ిྲྀͷଌఆͱ CSA ճ࿏ϊΠζͷཧ࿦‫ࢉܭ‬ΛߦͳͬͨɻຊઅͰ͸ɺ·ͣɺϑϨʔϜಡΈग़͠ʹΑΓऔಘͨ͠ϖσελϧ෯Λ‫͍ͯͮج‬ɺ༷ʑͳ৚݅ԼͰͷ XRPIX8 ͷϊΠζΛ࣮ଌ͢Δɻͦͯ͠ɺͦΕΛɺ҉ిྲྀͷଌఆ݁Ռɺ͓ΑͼɺCSA ճ࿏ϊΠζͷཧ࿦༧ଌͱൺֱ͢Δ͜ͱͰɺ֤ϊΠζ੒෼ͷ‫د‬༩Λ‫ٻ‬ΊΔɻϊΠζͷ࣮ଌ͸ҎԼͷ 3 ৚݅Ͱߦͳͬͨɻ
৚݅ A: −60◦ C, VBB = −200 V
XRPIX8 ͷ‫ج‬ຊతੑೳධՁ (6.3.1 અ) ʹ͓͍ͯɺ6.4 keV Ͱ 182 eV (FWHM) ͷΤωϧΪʔ෼ղೳΛୡ੒ͨ͠৚݅
৚݅ B: −60◦ C, VBB = −150 V৚݅ Aɺ৚݅ C ͷؒͷ৚݅৚݅ C: −15◦ C, VBB = −150 V
৚݅ A ͔Β‫ݦ‬ஶʹྼԽͨ͠ΤωϧΪʔ෼ղೳ (238 eV) Λࣔ͢৚݅1ಛʹߴԹͷ৔߹͸ɺ࿐ޫ͕࣌ؒҟͳΔ͜ͱʹΑΔϊΠζੑೳͷมԽ͸҉ిྲྀϊΠζͰܾ·Δͱߟ͑ΒΕ
Δɻ

7.3. ϊΠζ‫ݯ‬ͷ੾Γ෼͚

97

(a)

(b)

25

25

20

20

30

Noise [e-]Noise [e-]

30

15

10

10

5

0

15

CD = 2 fF
CD = 4 fF
CD = 8 fF
−60

−40

5

CD = 16 fF
CD = 32 fF−200

CD = 2 fF
CD = 4 fF
CD = 8 fF

0
0.01

20

0.1

○

T [ C]

1

CD = 16 fF
CD = 32 fF

10

100

TCDS [msec](c)30

CFB [fF]
3.25

3.2

3.15

3.1

3.05

3

25

30

2.95

Total Noise
Thermal Noise
Flicker Noise

25

Noise [e-]

20

15

10

5

0

5

10

15

20

35

40

CD [fF]ਤ 7.9: CSA ճ࿏ϊΠζͷཧ࿦‫݁ࢉܭ‬ՌɻCSA ճ࿏ϊΠζͷ (a) Թ౓ T ґଘੑɺ(b) T CDS ґଘੑɺ(c) ηϯα༰ྔ CD ґଘੑ Λ͍ࣔͯ͠Δɻ

98

ୈ 7 ষ XRPIX8 Λ༻͍ͨϊΠζ‫ݯ‬ͷఆྔతௐࠪ

શϐΫηϧͰ଍͠߹Θͤͨϖσελϧ෯ʹ͸ήΠϯ͹Β͖ͭͷ‫د‬༩΋‫·ؚ‬Ε͍ͯΔɻͦ͜ͰɺΑΓਖ਼֬ʹϊΠζௐࠪΛߦ͏ͨΊɺϐΫηϧຖʹϊΠζΛௐࠪ͢Δɻࠓճ͸ɺಛఆ
ͷ 8 × 8 ϐΫηϧʹ‫ݻ‬ఆͯ͠ධՁΛߦ͏ɻ

7.3.1 ϐΫηϧຖͷϖσελϧ෯ͷଌఆ
અ 3.2.4 ͷख๏Ͱิਖ਼ͨ͠ϐΫηϧຖͷϖσελϧ෯ σped ͷ෼෍Λਤ 7.10 ʹࣔ͢ɻ৚݅A ͱൺֱͯ͠ɺ৚݅ B ͱ৚݅ C Ͱ͸໌Β͔ʹ σped ͕େ͖͘ͳ͍ͬͯΔ͜ͱ͕Θ͔Δɻ࣮
ࡍɺ6.3.1 અͰ‫ٻ‬ΊͨΤωϧΪʔ෼ղೳ͔Β֓ࢉͨ͠ɺϑΝϊϊΠζΛআ͍ͨϊΠζ੒෼͸৚݅ Aɺ৚݅ C ͦΕͧΕͰ 15 e− , 24 e− Ͱ͋Δ4 ɻ͜ΕΒ͸ͦΕͧΕͷ৚݅ͰಘΒΕͨ
σped ͷ෼෍಺ʹऩ·Δ͜ͱ͔ΒɺΤωϧΪʔ෼ղೳ͸ϑΝϊϊΠζͱ σped Ͱߏ੒͞ΕΔ
ϊΠζ੒෼Ͱઆ໌Ͱ͖Δ5 ɻ
条件A: −60℃, VBB = −200 V

条件B: −60℃, VBB = −150 V

14

条件C: −15℃, VBB = −150 V

10

14

12

12

8
6

Counts/bin

Counts/bin

Counts/bin

8
10

6

4

4

10
8
6
4

2
2
0
5

2
10

15

20

25

σped [e-]

30

35

40

0
5

10

15

20

25

σped [e-]

30

35

40

0
5

10

15

20

25

σped [e-]

30

35

40

ਤ 7.10: ϑϨʔϜಡΈग़͠ͰಘΒΕͨϐΫηϧຖͷϖσελϧ෯ σped ͷ෼෍ɻ

7.3.2 ҉ిྲྀϊΠζͷ‫د‬༩
7.1 અͰ͸ɺશϐΫηϧฏ‫ۉ‬ͷ҉ిྲྀධՁΛߦͳͬͨɻ͜͜Ͱ͸্ड़ͷ 3 ৚݅ͰɺϐΫηϧຖͷ҉ిྲྀΛௐ΂Δɻσped ʹ‫·ؚ‬ΕΔ҉ిྲྀϊΠζ σDark ͸ɺ࿐ޫ࣌ؒ 1 ms ͷؒʹ஝√ੵ͢Δ҉ిྲྀిՙ (NDark ) ͷ͹Β͖ͭ (σDark = NDark ) ͰදͤΔ (2.5.4 અ)ɻ
ϐΫηϧຖͷ҉ిྲྀ͔Β‫ٻ‬Ίͨɺ1 ms ͋ͨΓͷ҉ిྲྀϊΠζͷ෼෍Λਤ 7.11 ʹࣔ͢ɻ৚݅ A ͱ৚݅ B ͷ҉ిྲྀϊΠζ͸΄΅Ұக͍ͯ͠Δ͕ɺ−15◦ C ͷ৚݅ C Ͱ͸૿Ճ͓ͯ͠
Γɺͦͷ஋͸ೈ X ઢʹର͢Δཁ‫ ∼( ٻ‬11 e− ) ʹ૬౰͢ΔɻFORCE ౥ࡌ࣌͸ɺ! 300 µm ͷۭ๡૚ްΛ‫ݕ‬౼͍ͯ͠ΔͨΊɺΑΓ҉ిྲྀϊΠζ΋େ͖͘ͳΔͱߟ͑ΒΕΔɻࠓ‫ྲྀి҉ޙ‬ϊΠζ௿‫͢ݮ‬Δํࡦʹ͍ͭͯ͸ɺ7.4 અͰ‫ݕ‬౼͢Δɻ

4

৚݅ B ͸࣌ؒͷؔ܎ͰະଌఆͰ͋Δɻ‫ʹີݫ‬͸ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸Πϕϯτຖʹ࿐ޫ͕࣌ؒҟͳΔͨΊɺ౰વΠϕϯτຖͷ҉ిྲྀϊΠζ΋ҟͳΔɻͦͷͨΊɺ1 ms ͷ࿐ޫΛߦ͏ϑϨʔϜಡΈग़͠Ͱଌఆͨ͠ σped ͱൺֱ͢Δͷ͸‫׬‬શʹ͸ϑΣΞͰ͸ͳ͍ɻ͔͠͠ɺ‫ޙ‬ड़͢Δ҉ిྲྀϊΠζ͸΄ͱΜͲޮ͍ͯ͜ͳ͍͜ͱ͔Βɺ͜ͷେࡶ೺ͳൺֱͰ΋આ໌Ͱ͖͍ͯΔͱߟ͑ΒΕΔɻ
5

7.3. ϊΠζ‫ݯ‬ͷ੾Γ෼͚

99

条件A: −60℃, VBB = −200 V

条件B: −60℃, VBB = −150 V

条件C: −15℃, VBB = −150 V

30

40

60

35

25

50

15
10

Counts/bin

Counts/bin

Counts/bin

30
20

40
30
20

25
20
15
10

5

10

0
0

0
0

2

4

6

8

10

12

14

5
2

Dark Noise [e-]

4

6

8

10

12

0
0

14

2

Dark Noise [e-]

4

6

8

10

12

14

Dark Noise [e-]ਤ 7.11: ϑϨʔϜಡΈग़͠ͰಘΒΕͨϐΫηϧຖͷ҉ిྲྀϊΠζͷ෼෍ɻ

7.3.3 ಡΈग़͠ϊΠζͷ‫د‬༩
条件A: −60℃, VBB = −200 V

条件B: −60℃, VBB = −150 V

18

8

16

7

12

12
10
8
6

10

6

Counts/bin

Counts/bin

Counts/bin

14

5
4
3

8
6
4

2

4

2

1

2
0
5

条件C: −15℃, VBB = −150 V

10

15

20

25

30

35

40

0
5

Readout Noise [e-]

10

15

20

25

30

Readout Noise [e-]

35

40

0
5

10

15

20

25

30

35

40

Readout Noise [e-]ਤ 7.12: ϐΫηϧຖͷಡΈग़͠ϊΠζͷ෼෍ɻ֤ϐΫηϧͷϖσελϧ෯͔Β҉ిྲྀϊΠζͷ‫د‬༩Λࠩ͠Ҿ͘͜ͱͰ‫ٻ‬Ίͨɻ

σped Λߏ੒͢Δ΋͏Ұͭͷ੒෼͸ಡΈग़͠ϊΠζɺͦͷதͰ΋ಛʹࢧ഑తͳ CSA ճ࿏ϊΠζͰ͋Δɻલઅ·ͰͰಘΒΕͨϐΫηϧຖͷ σped ͔Βಉ͡ϐΫηϧͷ҉ిྲྀϊΠζΛࠩ͠Ҿ͍ͨಡΈग़͠ϊΠζͷ෼෍Λਤ 7.12 ʹࣔ͢ɻ͜ΕΒͷ෼෍ΛΨ΢γΞϯͰϑΟοτ͠ɺ±1σ ʹऩ·ΔൣғΛਤ 7.12 ͷάϨʔྖҬͰࣔͨ͠ɻ৚݅ A ʹରͯ͠ɺ৚݅ B ͓Αͼ৚݅ C ͷಡΈग़͠ϊΠζͷ૿Ճ෼͸ɺΨ΢γΞϯͷதԝ஋Λࢀর͢ΔͱɺͦΕͧΕ19 e− , 15 e− ͱͳΔɻ҉ిྲྀϊΠζͱൺֱͯ͠ɺಡΈग़͠ϊΠζͷํ͕૿Ճ෼͕େ͖͘ɺ৚
݅ʹΑΔҧ͍͸ಡΈग़͠ϊΠζͷҧ͍ʹΑΓઆ໌Ͱ͖Δͱߟ͑ΒΕΔɻ͞Βʹɺ৚݅ B ͱ
৚݅ C ʹ͓͚ΔϐΫηϧຖͷಡΈग़͠ϊΠζͷؔ܎ (ਤ 7.13) ʹ͸ਖ਼ͷ૬͕ؔ͋Δɻ͜Ε͸ɺ৚݅ B ͱ C Ͱͷ‫ڞ‬௨ͷύϥϝʔλͰ͋Δ VBB ͕ɺ৚݅ A ΑΓ΋ಡΈग़͠ϊΠζΛେ͖͍ͯ͘͠Δ͜ͱΛࣔࠦ͢ΔɻVBB ʹґଘͯ͠ CD ͕େ͖͘มԽ͠ɺಡΈग़͠ϊΠζ͕มಈ͢ΔՄೳੑΛࣜ 7.14 Λ༻͍ͯ‫ݕ‬౼͢Δɻਤ 7.14 ʹɺGCSA ͱಡΈग़͠ϊΠζ͔Βܾ·Δ CD ΛΧϥʔϚοϓͰࣔ͠ɺͦ͜ʹ֤ϐΫηϧͰ࣮ଌͨ͠ GCSA ͱಡΈग़͠ϊΠζΛϓϩοτͨ͠΋ͷΛࣔ͢6 ɻࠇͷࣼઢͰࣔͨ͠ྖҬ͸ɺਤ 7.12 ͷάϨʔͰࣔͨ͠ɺ±1σ ʹऩ·ΔൣғΛࣔ͢ɻࠇͷࣼઢྖҬ಺ʹରԠ
6

৚݅ B ͸࣌ؒͷؔ܎ͰະଌఆͰ͋Δɻୈ 7 ষ XRPIX8 Λ༻͍ͨϊΠζ‫ݯ‬ͷఆྔతௐࠪ

Readout Noise (−15○C, VBB = −150 V) [e−]

100

35

30

25

20

15

10
10

15

20

25

30

35

Readout Noise (−60○C, VBB = −150 V) [e−]ਤ 7.13: ৚݅ B ͱ৚݅ C ʹ͓͚ΔϐΫηϧຖͷಡΈग़͠ϊΠζͷ૬ؔɻ
͢Δ CD ͷൣғΛ‫ٻ‬ΊΔͱɺ৚݅ A Ͱ͸ 5 fF " CD " 13 fFɺ৚݅ C Ͱ͸ 17 fF " CD " 29 fF
ͱ‫ͨͬ·ٻ‬ɻCD ͸ηϯεϊʔυͷதੑྖҬͱཪ໘ଆɺBPW ͱͷ pn ઀߹ʹΑΓ‫ܗ‬੒͞ΕΔۭ๡૚ͷ༰ྔ͔Βܾ·Δɻਤ 7.15 ʹࣔ͢Α͏ʹɺཪ໘ଆɺBPW ͱͷ pn ઀߹ʹΑΔۭ๡૚༰ྔΛͦΕͧΕ CBulk , CBPW ͱ͢Δɻ͜͜Ͱ͸؆୯ͷͨΊɺࣼΊํ޲΍ճ࿏૚ͱͷ‫د‬ੜ༰ྔͳͲ
͸ߟ͑ͳ͍͜ͱʹ͢ΔͱɺCD = CBulk + CBPW ͰදͤΔɻ
·ͣɺCBulk ʹ͍ͭͯɺϐΫηϧ໘ੵ 36 µm2 Λ΋ͪɺۭ๡૚ް Wdep > 100 µm ͚ͩ཭ͨ͠ฏߦ൘ίϯσϯαΛԾఆ͢Δͱɺ࣍ࣜͷΑ͏ʹදͤΔɻ

CBulk = (1.04 × 10−12 F/cm) ×

36 µm2< 10−1 fF
Wdep(7.16)ΑͬͯɺCBulk ͸΄ͱΜͲޮ͔ͳ͍͜ͱ͕Θ͔ΔɻCBPW ͸ɺਤ 7.15 தͷॎํ޲ͷதੑྖҬͷ௕͞ l ͱɺηϯεϊʔυɾBPW ؒͷۭ๡૚ް b − a Λύϥϝʔλʹ΋ͭԁ౵‫ܕ‬ίϯσϯαͷ༰ྔ7 ʹ૬౰͢Δɻ͜ͷ CBPW ͷ஋Λ֓ࢉ͢ΔɻBPW1 ଆɺBNW ଆʹ޿͕Δۭ๡૚ް͸ɺࣜ 2.13 Λ༻͍ΔͱͦΕͧΕ 0.2 µm, 0.6 µm ͱ‫·ٻ‬Δɻ͜͜ͰɺBPW1, BNW3 ͷෆ७෺ೱ౓ΛͦΕͧΕ 1017 cm−3 , 1016 cm−3 ͱԾఆ͠ɺԣํ޲ͷόοΫόΠΞεిѹ͸ηϯεϊʔυిҐͱ BPW ͷిҐͷࠩ VSense − VBPW ∼ 0.7 − (−2.0) = 2.7 V ͱͨ͠ɻηϯεϊʔυத৺͔Β BPW1 ͱ BNW3 ͷ‫ڥ‬քͷ‫ ཭ڑ‬2.7 µm Λ༻͍Δͱɺa = 2.7 − 0.7 = 2.0 µm,
b = 2.7 + 0.2 = 2.9 µm ͱͳΔɻਂ͞ํ޲ͷෆ७෺ೱ౓͸େ͖͘ҟͳΔͨΊɺ͜͜Ͱ͸ࢀߟ஋ͱͯ͠ l = 1 µm ΛԾఆ͢ΔͱɺCBPW ͸࣍ͷΑ͏ʹͳΔɻ

CBPW = (1.04 × 10−12 F/cm) ×2πl∼ 2 fFln(b/a)(7.17)

CBulk ΑΓ΋ܻͰେ͖͘ɺCBPW ͕ CD ΛܾΊ͍ͯΔͱߟ͑ΒΕΔɻ࣮ࡍɺXRPIX8 ʹಋೖ
7ηϯεϊʔυपลΛ্͔Β‫ݟ‬Δͱਖ਼࿡֯‫ܗ‬ͷߏ଄Ͱ͋Δ͕ɺࠓճ͸؆୯ͷͨΊԁ‫͑ߟͰܕ‬Δɻ

7.4. ϊΠζ௿‫ޙࠓ͚ͨ޲ʹݮ‬ͷํ਑

101

ͨ͠ PDD ߏ଄ͷσόΠεγϛϡϨʔγϣϯͰɺϙςϯγϟϧߏ଄͔Β‫ٻ‬Ίͨηϯα༰ྔ͸ CD = 3.2 fF[50] Ͱ͋Γɺ্‫ه‬ͷ‫ੵݟ‬΋Γͱ͍ۙ஋Ͱ͋Δɻ
৚݅ A Ͱ‫ ͨͬ·ٻ‬CD ͸ɺγϛϡϨʔγϣϯͷ஋ CD = 3.2 fF ΑΓ΋େ͖͍ɻ͜ͷཧ༝ͱͯ͠ɺ࣮‫ͱݧ‬σόΠεγϛϡϨʔγϣϯͰͷ৚͕݅ҟͳΔ͜ͱ͕Մೳੑͱͯ͠‫͛ڍ‬ΒΕ
Δɻ࣮‫͍ͨ༻ʹݧ‬ૉࢠͷ΢Σϋൺ఍߅ͱηϯα૚ް͕ͦΕͧΕ ∼ 4 kΩ · cmɺ∼ 300 µm Ͱ͋Δͷʹର͠ɺγϛϡϨʔγϣϯ৚݅͸ͦΕͧΕ ∼ 25 kΩ · cmɺ∼ 200 µm Ͱ͋ΔɻγϛϡϨʔγϣϯ৚݅ͷํ͕ۭ๡Խ͠΍͍͢ͱߟ͑ΒΕΔͨΊɺ৚݅ A Ͱ‫ ͨͬ·ٻ‬CD ͷํ͕େ͖͘ͳͬͨͱߟ͑ΒΕΔɻࠓ‫ͱݧ࣮ޙ‬ಉ͡৚݅ͰγϛϡϨʔγϣϯΛߦ͍ɺ֬ೝ͢Δɻ
Ұํɺ৚݅ C Ͱ‫ ͨͬ·ٻ‬CD ͸৚݅ A ΑΓ΋਺ഒେ͖͍ɻ΋͠ಡΈग़͠ϊΠζͷ૿Ճ͕CD ͷ૿ՃͰઆ໌Ͱ͖Δͱ͢ΔͱɺCBPW ͕ VBB ʹ‫͘ڧ‬ґଘ͢Δͱߟ͑ΒΕΔɻVBB Λେ͖͘͢Δͱɺॎํ޲ͷۭ๡Խ͕ਐΜͰ l ͸খ͘͞ͳΓɺԣํ޲ͷۭ๡Խ΋ਐΜͰ b/a ͸େ͖͘ͳΔͱߟ͑ΒΕΔͨΊɺগͳ͘ͱ΋ఆੑతʹ͸࣮‫ͱ࣮ࣄݧ‬ໃ६͠ͳ͍ɻ
ࠓ‫ޙ‬ɺ࣮ࡍʹ CD ͕ VBB ʹ‫͘ڧ‬ґଘͯ͠มԽ͢Δ͔Ͳ͏͔Λ‫͢ূݕ‬Δඞཁ͕͋Δɻ‫ূݕ‬
͢Δख๏ͱͯ͠ɺೋͭఏҊ͢ΔɻҰͭ໨͸ɺσόΠεγϛϡϨʔγϣϯΛ༻͍ͯϙςϯγϟϧߏ଄͔Βηϯα༰ྔΛਪఆ͢Δख๏Ͱ͋ΔɻͲ͜·Ͱۭ๡Խ͍ͯ͠Δ͔͸ϙςϯγϟϧߏ଄͔ΒਪଌͰ͖ΔͨΊɺ༰ྔΛ‫ٻ‬ΊΔ͜ͱ͕Ͱ͖Δɻೋͭ໨͸ɺॳஈͷճ࿏Λ
SF ճ࿏ʹஔ͖‫ ͨ͑׵‬TEG Λ࡞੒͢Δ͜ͱͰ͋ΔɻSF ճ࿏ͷม‫׵‬ήΠϯ͸ɺೖྗஈͷ༰ྔʹ൓ൺྫ͢ΔͨΊɺଌఆͨ͠ήΠϯ͔Βηϯα༰ྔΛ‫ٻ‬ΊΔ͜ͱ͕Ͱ͖Δɻ˙ 7.4

ϊΠζ௿‫ޙࠓ͚ͨ޲ʹݮ‬ͷํ਑

−15◦ C ͱ͍͏੍໿ͷதͰɺಡΈग़͠ϊΠζͱ҉ిྲྀϊΠζΛ߹Θͤͯ < 10 e− Λୡ੒͢Δඞཁ͕͋Δɻͦ͜Ͱɺࠓ‫ݕޙ‬౼͢΂͖ํࡦΛఏҊ͢Δɻ
1 ͭ໨͸ɺηϯεϊʔυͱͦͷपลͷߏ଄ͷมߋͰ͋ΔɻCD Λখ͘͢͞ΔΑ͏ͳߏ଄ʹ͢Δ͜ͱͰɺCSA ճ࿏ϊΠζΛ௿‫͖Ͱݮ‬ΔɻXRPIX8 Ͱ͸ BNW3 Λಋೖ͕ͨ͠ɺηϯεϊʔυपล͕ۭ๡Խͮ͠Β͘ͳΔ͜ͱͰɺCD ͕૿Ճͨ͠ɻCD ͸ CSA ճ࿏ϊΠζʹ‫ڧ‬͘ґଘ͢ΔͨΊɺBNW3 Λແ͘͢͜ͱͰϊΠζ௿‫͖Ͱݱ࣮͕ݮ‬Δɻ‫ࡏݱ‬ɺXRPIX8 ΛϕʔεʹɺBNW Λ࣋ͨͳ͍ૉࢠͷ੡࡞͕ਐΊΒΕ͍ͯΔɻࠓ‫ޙ‬ɺ͜ͷૉࢠͱϊΠζੑೳͷൺֱΛߦ͏ɻ·ͨɺηϯεϊʔυͷαΠζΛখ͘͢͞Δ͜ͱͰɺ͞Βʹ CD Λখ͘͞Ͱ͖Δɻ
ͨͩ͠ɺ͜ͷߏ଄ͷมߋʹΑΔిՙऩूޮ཰ྼԽͷఔ౓ʹ͍ͭͯ͸ɺTEG ಋೖ΍σόΠεγϛϡϨʔγϣϯͳͲΛߦ͍ɺे෼‫ݕ‬౼͢Δඞཁ͕͋Δɻ
2 ͭ໨͸ɺ࿐ޫ࣌ؒΛ୹͘͢Δ͜ͱͰ͋ΔɻΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ͸ɺ‫ݱ‬ঢ় 1 ms ͷ࿐ޫͷؒʹτϦΨग़ྗ͕ͳ͍৔߹ɺϐΫηϧϦηοτΛߦ͍࠶౓࿐ޫΛ։࢝͢Δɻྫ͑√͹ɺ͜ͷ࠷େͷ࿐ޫ࣌ؒΛ൒෼ͷ 500 µs ʹ͢Ε͹ɺ҉ిྲྀϊΠζΛ 1/ 2 ഒʹམͱ͢͜
ͱ͕Ͱ͖Δɻͨͩ͠ɺ࿐ޫ࣌ؒΛ୹͘͢Δ͜ͱͰɺϦηοτಈ࡞ʹΑΔෆ‫͕ؒ࣌ײ‬૬ରతʹ૿Ճ͢Δͱ͍͏τϨʔυΦϑʹ஫ҙ͢Δඞཁ͕͋Δɻ‫ࡏݱ‬ͷಈ࡞Ͱ͸Ϧηοτ࣌ؒ͸
∼ 31 µs Ͱ͋ΔͨΊɺෆ‫ؒ࣌ײ‬͸ 1 ms ͷ࿐ޫʹରͯ͠ 31/1000 = 3.1%Ͱ͋Δɻ࠷େ࿐ޫ
࣌ؒΛ 500 µs ʹมߋ͢Δͱɺෆ‫ؒ࣌ײ‬͸ 2 ഒͷ 6.2%ʹͳΔɻকདྷతʹ͸ɺෆ‫ؒ࣌ײ‬ͷ૿ՃʹΑΔ‫ݕ‬ग़ޮ཰ͷྼԽͱͷ݉Ͷ߹͍Λߟྀͯ͠ɺ࠷େ࿐ޫ࣌ؒΛܾఆ͢Δඞཁ͕͋Δɻ

102

ୈ 7 ষ XRPIX8 Λ༻͍ͨϊΠζ‫ݯ‬ͷఆྔతௐࠪ

30

A: −60○C, VBB = −200 V
C: −15○C, VBB = −150 V

40

30

29

20

20

15

CD [fF]

Readout Noise [e−]

25

17
13
10

10

55
5

40

50

60

70

80

0

−

GCSA [μV/e ]ਤ 7.14: CSA ճ࿏ͷήΠϯͱ CSA ճ࿏ϊΠζ͔Βܾ·Δηϯα༰ྔ CD ͷΧϥʔϚοϓɻ੺ɺϚθϯμͷσʔλ఺͸ͦΕͧΕ৚݅ Aɺ৚݅ C ͰϐΫηϧຖʹಘΒΕͨ CSA ճ࿏ͷήΠϯͱಡΈग़͠ϊΠζͷ૊Έ߹ΘͤΛϓϩοτ͍ͯ͠ΔɻࠇͷࣼઢྖҬ͸ɺਤ 7.13 Ͱࣔͨ͠৚݅ A ͱ৚݅ C ͷώετάϥϜΛΨ΢γΞϯͰϑΟοτͨ͠ͱ͖ͷ ±1σ ‫ࠩޡ‬ൣғʹ૬౰͢ΔྖҬΛ͍ࣔͯ͠Δɻ੺ɺϚθϯλͷഁઢ͸ͦΕͧΕ৚݅ Aɺ৚݅ C ͷσʔλ఺͕ࠇࣼઢྖҬʹऩ·Δൣғͷ‫ڥ‬քʹ૬౰͢Δ CD ͷίϯτΞͰ͋Δɻ

7.4. ϊΠζ௿‫ޙࠓ͚ͨ޲ʹݮ‬ͷํ਑103(a) 平面図BPW1

2.7 µmab

空乏層(b) 断面図

VBPWn+Circuit Layer
SiO2

p+

a
l

CBPW

b

BNW3

CBulk

Si Sensor Layer

BPW1
BPW2

空乏層

VBB

ਤ 7.15: XRPIX8 ʹ͓͚Δηϯα༰ྔͷ֓೦ਤɻ

104

ୈ 8 ষ ·ͱΊຊम࢜࿦จͰ͸ɺ࣍ੈ୅ X ઢఱจӴ੕ FORCE ౥ࡌΛ໨ࢦͯ͠ɺ޿ଳҬࡱ૾෼ޫ‫ ث‬XRPIXͷೈ X ઢੑೳ‫ͼٴ‬ϊΠζੑೳͷఆྔత‫ڀݚ‬Λߦͳͬͨɻຊ‫Ͱڀݚ‬ಘΒΕͨ݁Ռʹ͍ͭͯɺҎԼʹ·ͱΊΔɻ

1. PDD ߏ଄Λಋೖͨ͠ϓϩτλΠϓ XRPIX6E ͷೈ X ઢੑೳධՁ• PDD ߏ଄ͷಋೖʹΑΓτϦΨճ࿏ͱηϯεϊʔυؒͷి‫ؾ‬త‫ׯ‬বͷ཈੍Λ࣮‫͠ݱ‬ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ Al-K (1.5 keV) ͷ‫ݕ‬ग़ʹॳΊͯ੒ޭͨ͠ɻ
• ͔͠͠ɺΠϕϯτ‫ۦ‬ಈಡΈग़͠ʹ͓͚Δ Al-K ͷ‫ݕ‬ग़ޮ཰͸ϑϨʔϜಡΈग़͠ΑΓ΋௿͘ ɺ1.1 keV ະຬͷ X ઢ͸ϊΠζʹຒ΋Εͯ‫ݕ‬ग़Ͱ͖ͳ͍͜ͱΛൃ‫ݟ‬ͨ͠ɻ• ͜ͷߴ͍ΤωϧΪʔᮢ஋͸ɺτϦΨճ࿏ϊΠζʹՃ͑ɺಡΈग़͠ϊΠζ΍҉ిྲྀϊΠζΛ߹ࢉͨ͠ϊΠζ ∼ 25 e− (rms) ʹΑΓܾ·Δͱਪଌ͍ͯ͠Δɻೈ X
ઢੑೳͷཁ‫ٻ‬ୡ੒ʹ͸ɺ͜ΕΒͷϊΠζΛ ∼ 11 e− (rms) ·Ͱ௿‫͢ݮ‬Δඞཁ͕͋
Δͱ͍͏݁࿦Λಘͨɻ
2. PDD ߏ଄Λվྑͨ͠ XRPIX8 ͷ‫ج‬ຊੑೳධՁ• XRPIX6E Ͱൃ֮ͨ͠ಛఆͷ৚݅Ͱ͔͠ಈ࡞͠ͳ͍໰୊Λղܾ͢΂͘ɺ৽ͨʹ։ൃͨ͠ XRPIX8 ͷ‫ج‬ຊੑೳධՁΛߦͳͬͨɻXRPIX6E Ͱಈ࡞͠ͳ͔ͬͨৗԹ
ͰͷεϖΫτϧऔಘΛՄೳʹͨ͠ଞɺΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱ 183 eV (FWHM
at 6.4 keV) ͱ͍͏ΤωϧΪʔ෼ղೳΛୡ੒͠ɺ෼ޫੑೳʹӨ‫͘ͳڹ‬໰୊Λղܾͨ͜͠ͱΛࣔͨ͠ɻ
3. XRPIX8 Λ༻͍ͨ҉ిྲྀϊΠζͱಡΈग़͠ϊΠζͷఆྔతධՁ• ҉ిྲྀϊΠζͱ CSA ճ࿏ϊΠζͷఆྔతධՁʹΑΓɺηϯα༰ྔ͕όοΫόΠΞεిѹʹ‫͘ڧ‬ґଘ͢Δ͜ͱͰɺCSA ճ࿏ϊΠζ͕ஶ͘͠มಈ͢Δ͜ͱΛൃ‫ͨ͠ݟ‬ɻ
Ҏ্Λ౿·͑ɺࠓ‫ޙ‬ͷϊΠζ௿‫ݮ‬ͷํࡦΛҎԼͷΑ͏ʹఏҊͨ͠ɻ

1. ηϯεϊʔυͱͦͷपลͷߏ଄ͷมߋ
BNW3 Λແ͘͠ɺηϯεϊʔυͷαΠζΛখ͘͢͞Δ͜ͱͰɺηϯα༰ྔΛখ͘͞
Ͱ͖Δɻ͜ΕʹΑΓɺ‫ݱ‬ঢ়ࢧ഑తͳ CSA ճ࿏ϊΠζΛ௿‫͖Ͱݮ‬Δɻ͔͠͠ɺిՙऩ
ूޮ཰ͱͷ݉Ͷ߹͍΋े෼‫ݕ‬౼͢Δඞཁ͕͋Δɻ

105
2. ࠷େ࿐ޫ࣌ؒͷมߋΠϕϯτ‫ۦ‬ಈಡΈग़͠Ͱͷ࠷େ࿐ޫ࣌ؒΛ 1 ms ΑΓ΋୹͘͢Δ͜ͱͰɺ҉ిྲྀϊΠζΛ௿‫͖Ͱݮ‬Δɻͨͩ͠ɺϐΫηϧͷϦηοτಈ࡞ʹΑΔෆ‫͕ؒ࣌ײ‬૬ରతʹ૿Ճ
͢Δ͜ͱʹΑΔ‫ݕ‬ग़ޮ཰ͷྼԽ΋Ճຯ͢Δඞཁ͕͋Δɻ

106

෇ ࿥A
˙ A.1

෇࿥

पลճ࿏ͷಈ࡞

पลճ࿏Ͱ͸ɺ֤ϐΫηϧͷΞφϩά৴߸ΛॱʹಡΈग़͢໾ׂΛ΋ͭɻ֤ྻʹ౥ࡌ͞ΕͨΧϥϜΞϯϓͰ৴߸૿෯Λߦ͍ɺαϯϓϧϗʔϧυΩϟύγλʹҰ୴ిѹϨϕϧΛอ
࣋͢Δɻͦͷ‫ޙ‬ɺपลճ࿏ͷϦηοτϨϕϧͱͦΕʹ৴߸Ϩϕϧ͕৐ͬͨిѹΛಉ࣌ʹग़ྗ (ࠩಈग़ྗ) ͢ΔɻࠩಈͰग़ྗͨ͠৴߸ͷࠩΛऔΔ͜ͱͰɺͦΕͧΕͷग़ྗʹ‫ڞ‬௨ͷίϞϯϞʔυϊΠζΛ཈੍Ͱ͖Δɻ·ͨɺ֤ϐΫηϧͷ৴߸ϨϕϧͱϦηοτϨϕϧͷࠩΛͱͬͯಡΈग़ͨ͢Ίɺ֤ϐΫηϧΞϯϓ͔Βͷग़ྗిѹͷΦϑηοτΛআ‫͢ڈ‬Δ͜ͱ΋Ͱ͖Δɻ͋ΔϐΫηϧ͔ΒͷΞφϩά৴߸Λपลճ࿏Λհͯ͠ಡΈग़͢ྲྀΕʹ͍ͭͯɺਤ A.1 Λ༻͍ͯઆ໌͢Δɻ(i) φR ͱ φSS Λ HighɺφSR Λ Low ʹͨ͠‫ޙ‬ɺಡΈग़͢ϐΫηϧͷ Row Read ͱ Column
Read Λ High ʹ͢ΔɻCDS Ωϟύγλͷ‫ޙ‬ஈʹ CSA Ͱ൓స૿෯͞Εͨ৴߸ VSIG > 0͕৐͍ͬͯͨ৔߹ɺ఺ A, B ͷిҐ͸ͦΕͧΕ VCDS + VSIG , VCDS + VSF + VSIG ͱͳΔɻ͜͜ͰɺVSF ͸ SF ճ࿏͔Βͷग़ྗͷΦϑηοτͰ͋ΔɻҰํɺΧϥϜΞϯϓͷೖྗ
ஈͰ͋Δ఺ C ͷిҐ͸Ծ૝୹བྷʹΑΓ VCOM ʹอ࣋͞ΕΔɻ(ii) φSS ͱ φR Λ LowɺφSR Λ High ʹͨ͠‫ޙ‬ɺRST CDS Λ High ʹ͢Δɻ͢Δͱɺ఺ A,
B ͷిҐ͸ͦΕͧΕ VCDS , VCDS + VSF ͱͳΔɻC1 ͱ C2 ͷؒͷిՙ͕อଘ͢Δ͜ͱɺ
C1
఺ C ͷిҐ͸ VCOM ʹอ࣋͢Δ͜ͱ͔Βɺ఺ D, F ͷిҐ͸ VCOM + VSIG ×
ͱͳΔɻ
C2͜͜ͰɺφSS ͸ Low ʹ͍ͯ͠ΔͨΊɺ఺ E ͷిҐ͸ CPED ʹΑΓΧϥϜΞϯϓͷϦ
ηοτϨϕϧ VCOM ʹอ࣋͞ΕΔɻ
(iii) αϯϓϧϗʔϧυΩϟύγλ (CSIG , CPED ) ʹͦΕͧΕ৴߸ϨϕϧͱϦηοτϨϕϧΛ
อ࣋ͨ͠ঢ়ଶͰɺࠩಈग़ྗ͢Δ४උʹೖΔɻ·ͣɺφRR Λ High ʹͯ͠ Output BuﬀerΛϦηοτ͢Δɻ(iv) φRR Λ Low ʹͨ͠‫ޙ‬ɺφH Λ High ʹͯ͠ɺαϯϓϧϗʔϧυΩϟύγλʹอ࣋͠C1͍ͯͨిҐࠩΛग़ྗ͢Δɻ͜ͷ࣌ͷిѹࠩ͸ɺVSIG ×
ͱͳΔɻ͜ͷ͏ͪ C2 ͸ɺ
C2Programmable Gain Amplifier (PGA) ճ࿏ʹΑͬͯௐ੔͢Δ͜ͱ͕ՄೳͰ͋Δɻຊम
࢜࿦จͰ͸ C1 = C2 ͱͯ͠༻͍ΔɻͦͷͨΊɺΧϥϜΞϯϓͷ૿෯཰͸ 1 ͱͳΔɻ

A.1. पลճ࿏ͷಈ࡞

(i)

107

φR

VDD18
VB_SF

SF

VCDS + VSF+ VSIGVCDS + VSIG

B

D

VCOM

VCOM

C2

VCDS + VSF

VCDS
RST_VTH

Column
Read

PED
VCOM

VCOM
C1 φSR+ VSIG × —
C2

SIG
CSIG

GND

φH

φRR
VC Differential Output

Sample Hold Cap.

φR

VC
CPED

Row Read
C2

C1

SF

ColumnRead

RST_VTHVCOM

φRR

Output Buffer

φSS

PED
VCOM

φH
SIG

φSR
VCOM
C1
+ VSIG × —C2

Column Amp. with CDS
GND

RST_CDS

Output Buffer

VTH

CCDS

CSIG

φRR
VC Differential Output

Sample Hold Cap.

VTH

φR

VDD18
VB_SF

VC
CPED

Row Read
C1

C2

SF

CCDS
RST_VTH

VCOM
Column Amp. with CDS
GND

RST_CDS

φRR

φSS

Column Amp. with CDS

VB_SF

VCDS

VC Differential Output

VC
CPED

VDD18

(iv)

φRR

φR

VCOM
RST_CDSCSIG

Row Read

SF

VCDS

SIG

F

φSR

Sample Hold Cap.

C1

(iii)

PED

VTH

VB_SF

VCDS

VCOM

Output Buffer

E φH

Column Amp. with CDS

VDD18

CCDS

Column
Read

φRR

φSS

GND

RST_CDS

C2

C1

A

VCDS

(ii)

CPED

Row Read

RST_VTH

CCDS

VC

C

ColumnRead

φRR

Output Buffer

φSS

PED
φH
SIG

φSR
VCOM
C1
+ VSIG × —
C2

CSIG

φRR

Sample Hold Cap.

VC Differential Output

VTHਤ A.1: पลճ࿏ͷಈ࡞ͷྲྀΕɻ֤৔ॴͷిҐΛ৭෇͖Ͱ͍ࣔͯ͠Δɻ

108

˙ A.2

෇࿥A

෇࿥

XRPIX6E ʹ͓͚Δ҉ిྲྀ໰୊༏Εͨ෼ޫੑೳΛୡ੒ͨ͠ XRPIX6E Ͱ͕͋ͬͨɺզʑ͸ XRPIX6E ʹಋೖͨ͠ PDD ߏ଄ಛ༗ͷ৽ͨͳ໰୊ɺʮ҉ిྲྀ໰୊ʯʹ௚໘ͨ͠ɻຊઅͰ͸҉ిྲྀ໰୊ͷ֓ཁͱͦͷ‫ݪ‬Ҽʹ͍ͭͯ؆୯ʹ·ͱΊΔɻͳ͓ɺຊઅʹ‫͢ࡌܝ‬Δਤ͸‫ాݪ‬म࢜࿦จ [50] Λ‫࡞ʹݩ‬੒ͨ͠ɻ

A.2.1 ҉ిྲྀ໰୊ͷ֓ཁਤ A.2 ʹόοΫόΠΞεిѹ VBB ຖʹऔಘͨ͠ੜ೾ߴ஋ͷೋ࣍‫ݩ‬ϚοϓΛࣔ͢ɻVBB ຖʹ೾ߴ஋ͷৼΔ෣͍͕େ͖͘ҟͳΓɺ·ͱΊΔͱҎԼͷ 3 ͭͷྖҬʹ෼ྨͰ͖Δ͜ͱ͕Θ͔ͬͨɻྖҬ (i): ෆ‫ྖײ‬Ҭ
VBB = −10 V ͳͲͷখ͍͞ VBB ʹ͓͍ͯɺपล෦ʹ‫ݟ‬ΒΕΔ೾ߴ஋ͷখ͍͞ྖҬɻ৴߸Ϩϕϧ͕ GND ʹுΓ෇͖ɺX ઢ΍Մࢹޫ౳Λ‫ݕ‬ग़Ͱ͖ͳ͍ෆ‫ྖײ‬ҬͰ͋Δ͜
ͱ͕Θ͔ͬͨɻ
ྖҬ (ii): ҉ిྲྀͷେ͖͍ྖҬ
VBB = −10 V, −30 V ͳͲͰ‫ݟ‬ΒΕΔɺ೾ߴ஋͕ ADC ͷ࠷େνϟϯωϧͰ͋Δ 4096
ʹৼΓ੾Ε͍ͯΔྖҬɻXRPIX6E ͸ిࢠऩू‫͋Ͱܕ‬ΓɺిࢠΛऩू͢Δͱ೾ߴ஋͕େ͖͘ͳΔɻ͕ͨͬͯ͠ɺ͜ͷྖҬʹ͸େྔͷిࢠ͕ྲྀೖ͍ͯ͠Δɺͭ·Γ҉ిྲྀ͕ඇৗʹେ͖͍ͱߟ͑ΒΕΔɻྖҬ (iii): X ઢʹ‫౓ײ‬Λ΋ͭྖҬVBB = −30 V ͳͲɺVBB Λେ͖͘͢Δͱத৺෦ʹ‫ݱ‬ΕɺVBB = −200 V ·Ͱେ͖͘͢
Δͱશ໘ʹ޿͕ΔྖҬɻ͜ͷྖҬͰ͸ X ઢ΍ՄࢹޫΛ‫ݕ‬ग़Ͱ͖ɺ༏Εͨ෼ޫੑೳΛ
͍ࣔͯ͠ΔͨΊɺਖ਼ৗʹಈ࡞͍ͯ͠Δͱߟ͑ΒΕΔɻຊम࢜࿦จͰͷ XRPIX6E ͷධՁʹ͓͍ͯɺVBB = −200 V ΛҹՃ͍ͯ͠Δͷ͸͜Ε͕ཧ༝Ͱ͋ΔɻҎ্ͷ݁Ռ͸δΦϝτϦతʹ͸ඇৗʹରশͳৼΔ෣͍Λ͍ͯ͠Δɻ͜Ε͸ɺϐΫηϧΞ
ϨΠपғ͔Β‫͍ڧ‬Ө‫ڹ‬Λड͚͍ͯΔ͜ͱΛ͍ࣔࠦͯ͠Δɻ

A.2.2 ҉ిྲྀ໰୊ͷ‫ݪ‬Ҽલઅͷ݁ՌΑΓɺपลߏ଄ʹӨ‫͞ڹ‬Εͯɺϙςϯγϟϧ෼෍͕ઃ‫࣌ܭ‬ͷ૝ఆిҐͱେ͖͘ҟͳΔͷͰ͸ͳ͍͔ɺͱ༧૝ͨ͠ɻਤ A.3 ʹਪଌ͞ΕΔ࣮ࡍͷϙςϯγϟϧ෼෍ͱɺઃ
‫ʹ࣌ܭ‬૝ఆ͍ͯͨ͠ϙςϯγϟϧ෼෍ͷൺֱΛࣔ͢ɻਤ A.3 Λ‫ʹݩ‬ɺ֤ྖҬ (i), (ii), (iii)͕ੜͨ͡ཧ༝ʹ͍ͭͯߟ࡯͢Δɻ

A.2. XRPIX6E ʹ͓͚Δ҉ిྲྀ໰୊

15
15

20 Axis
251
20
25

30
30

35
35

Column Address40
40

4.1e+03
3.5e+03
3.2e+03
2.9e+032.5e+03

25
25

Axis 245
45

55

Vb = −10 V

10
10

15
15

20
25
20 Axis
251

30
30

35
35

40
40

55

(ii) 暗電流の大きい領域

1.3e+031010

1.6e+03

1.9e+0315
15

2.2e+03

2200

45
45

55

10
10

Vb = −30 V

15
15

20 Axis
25
20
251

30
30

35
35

40
40

45
45

1000
1e+03

10
10

3.8e+03

45
45
40
40
35
35

55

4100

(iii) X 線に感度
をもつ領域

20
20

25
10

15

20
20

Axis 2(iii) X 線に感度
をもつ領域

55

55

(i) 不感領域

[ADU]

3200

30
30

40
35
35
30

40
35
35
30
25
15

20
20

(ii) 暗電流の大きい領域

10

Axis 2
Row Address

VVBB−200VVb ==−200

45
45

VVBB
=−30
−30VV
b=

45
45

VVBB
= −10
−10 V
V
b=

109

Vb = −200 V

4000

4000

3500

3500

3500

3000

Channel [ADU]

4000

Channel [ADU]

Channel [ADU]ਤ A.2: XRPIX6E όοΫόΠΞεిѹຖͷੜ೾ߴ஋ϚοϓɻX ઢ΍Մࢹޫ౳͸রࣹͤͣʹσʔλऔಘ͍ͯ͠Δɻ
3000

ෆ‫ྖײ‬Ҭ (i) ͕ੜͨ͡ཧ༝
2500

2500

3000

2500

XRPIX6E Ͱ͸ɺϐΫηϧΞϨΠ୺ͷ BPW ԼΛۭ๡Խ͢ΔͨΊɺϐΫηϧΞϨΠͷपғΛ n ‫ܕ‬ͷϦϯάͰғ͍ɺͦ͜ʹϓϥεిѹ (e.g. VBNW RING = 1 V) ΛҹՃ͍ͯ͠Δɻ͜ΕʹΑΓɺBPW ͱཪ໘ؒʹిྲྀͷ‫ܦ‬࿏͕‫ܗ‬੒͞ΕΔͷΛ๷͙͜ͱ͕Ͱ͖Δɻ͔͠͠ɺͦͷ
Column Address
Column Address
Column AddressϦϯάͷిҐʹΑΓɺϐΫηϧ෦ͷిҐ͕ϓϥεଆʹҾͬுΒΕ͍ͯΔͱߟ͑ΒΕΔɻηϯεϊʔυͷϦηοτ࣌ͷిҐ (VSense ∼ 0.65 V) ΑΓ΋ϦϯάͷిҐͷํ͕ߴ͍ͨΊɺϐΫηϧΞϨΠ͔Βిࢠ͕Ϧϯάʹྲྀग़͢ΔΑ͏ͳঢ়‫ൃ͕گ‬ੜ͢Δɻ͕ͨͬͯ͠ɺਤ A.3(b)ʹࣔ͢Α͏ʹɺϦϯάͱͷ‫͍͕ͨۙ཭ڑ‬ΊʹΑΓେ͖ͳ‫د‬ੜ༰ྔΛ΋ͭपล෦͔Βిࢠ͕ྲྀग़͠ɺ৴߸Ϩϕϧ͕ GND ʹுΓ෇͘ྖҬ (i) ͕ੜͨ͡ͱਪଌ͍ͯ͠Δɻ
2000

2000

2000

1500

1500

1500

1000

0

10

20

30

CA

40

1000

0

10

20

30

CA

40

1000

0

10

20

30

40

CA

҉ిྲྀͷେ͖͍ྖҬ (ii) ͕ੜͨ͡ཧ༝
͜ͷྖҬͰ͸ɺͲ͔͜Β͔େྔʹిࢠ͕‫͞څڙ‬Ε͍ͯΔͱߟ͑ΒΕΔɻ͜ͷ‫ݪ‬Ҽͱͯ͠ɺηϯεϊʔυిҐΛϦηοτͨ͠ࡍɺϘϧπϚϯ෼෍ʹै͍पғʹ֦ࢄͨ͠ిՙ͕ಛ
ఆͷϐΫηϧ΁ͱి৔ʹԊͬͯྲྀΕࠐΜͰ͍Δͱਪଌ͍ͯ͠Δɻ͔͠͠ɺ‫ݱ‬ঢ়Ͱ͸͜ͷ‫ݪ‬Ҽͷৄࡉ͸Θ͔͍ͬͯͳ͍ɻ

VBB Λେ͖͘͢Δͱਖ਼ৗʹಈ࡞͢ΔྖҬ (iii) ͕޿͕Δཧ༝
BPW ௚Լͷ͋Δਂ͞ʹ͓͍ͯɺVBB Λେ͖͘͢ΔͱɺBPW ͕ΑΓۭ๡Խ͞ΕΔͨΊɺͦͷҐஔͷిҐ͸Լ͕͍ͬͯ͘ɻͦͷ݁Ռɺਤ A.3(d) ʹࣔ͢Α͏ͳઃ‫࣌ܭ‬ͷ૝ఆిҐʹ͖ۙͮɺਖ਼ৗʹಈ࡞͢Δͱߟ͑ΒΕΔɻҎ্ͷߟ࡯ʹΑΓɺ҉ిྲྀ໰୊ͷࠜຊͷ‫ݪ‬Ҽ͸ɺϐΫηϧΞϨΠͷपลʹ‫ܗ‬੒ͨ͠ n ‫ܕ‬Ϧϯάʹ͋Δͱ݁࿦͚ͮͨɻ

110

෇࿥A

෇࿥

(a) XRPIX6E の断面図
VBNW_RING

初期電圧~ 0.65 V

初期電圧~ 0.65 V

初期電圧~ 0.65 V

VBPW

初期電圧
~ 0.65 V

VBPW(b) 領域毎のキャパシタンスの違い
VBNW_RING

初期電圧~ 0.65 V

初期電圧~ 0.65 Vlarge cap.

(c) 実際の XRPIX6E 電位
−1 V
0V
+1 V

e−

+2 V

sense nodesense node

X–X’
Potential

sense nodesense nodesense node(d) 設計時の想定電位
−1 V
0V
+1 V

sense nodesense nodesense nodesense nodesense node

+2 V

X–X’
Potentialਤ A.3: ҉ిྲྀ໰୊ͷ‫ݪ‬ҼΛਪଌͨ͠ਤɻ(c) ͱ (d) ͸͍ͣΕ΋ XRPIX6E ͷஅ໘ਤ (a) ͰҾ͍ͨഁઢ X-X’ ͰͷిҐΛ‫͍ͯݟ‬Δɻ

A.3. CSA ճ࿏ͷϊΠζͷಋग़

˙ A.3

111

CSA ճ࿏ͷϊΠζͷಋग़અͰࣔͨ͠ CSA ճ࿏ͷϊΠζʹ͍ͭͯɺ‫ࢉܭ‬աఔΛ͜͜ʹࣔ͢ɻCSA ճ࿏ͷϊΠζͷ
ཧ࿦ࣜ 7.1 Λ࠶‫͢ܝ‬Δͱɺ
4* ∞
(
(2
dω
2
vout =S N η (ω) ((HCSA η (ω)(( |HCDS (ω)|2
,
(A.1)
2π
η=n,p 0S N η (ω) = 4kB T ξη

1

gm η

+

Nf η
, (η = n, p),
f

1
−1
,
βF 1 + jω/ωCSA
gm p 11
HCSA p (ω) ≃.
gm n βF 1 + jω/ωCSAࣜ A.1 ʹࣜ A.2, A.3, A.4 Λ୅ೖͯ͠੔ཧ͢ΔͱɺHCSA n (ω) ≃vout 2 = 4γth kB T ξn1

I A + γf
gm n β2F

Nf n
IB
β2F

͜͜ͰɺIA , IB ͸ͦΕͧΕ࣍ࣜͰఆٛ͢Δɻ* ∞4 sin2 (ωT CDS /2) dωIA =,1 + ω2 /ω2CSA 2π
0* ∞4 sin2 (ωT CDS /2)
+
, dω.
IB =
0 ω 1 + ω2 /ω2
CSA

IA ʹ͍ͭͯɺ x ≡ ω/ωCSA ͱ͓͘ͱɺ**ωCSA ∞ dx
ωCSA ∞ cos (ωCSA T CDS x)
IA =
−
dx
2
π
π
1 + x20 1+ x0,
ωCSA +=
1 − e−ωCSA TCDS
2
ωCSA
≃
2
্ࣜʹ͓͍ͯɺҎԼʹࣔ͢ੵ෼ެࣜ [68] Λ༻͍ͨɻ* ∞cos (ax)πdx = e−aβ (a > 0, Re[β] > 0)
2
2
β +x
2β
0

(A.2)
(A.3)
(A.4)

(A.5)

(A.6)
(A.7)

(A.8)
(A.9)
(A.10)(A.11)

ଓ͚ͯɺIB ʹ͍ͭͯߟ͑Δɻz ≡ ωT CDS , zc ≡ ωCSA T CDS ͱ͓͖ɺੵ෼۠ؒΛ CSA ճ࿏ͷΧοτΦϑप೾਺ ωCSA Ͱ෼ׂ͢Δ [69] ͱɺҎԼͷΑ͏ʹॻ͚Δɻ
!
"
* ∞
1
z
IB = 2(1 − cos z) − 2
dz(A.12)
z z + z2c0-!* zc" * zc
.
* ∞
* ∞
* ∞
z2c
1 − cos z
cos zzz cos z
=2
dz −
dz −
dz +
:2
;dz +
dz
2
2
2
2
2
z
z
0
zc
0 z + zc
zc z z + zc
0 z + zc
(A.13)≡ 2 (IB1 − IB2 + IB3 + IB4 )(A.14)

112

෇࿥A

͜͜Ͱɺ

IB1 =

!* zc

"
* ∞
1 − cos z
cos z
dz −
dz
z
z
0
zc
* zc
z
IB2 =
dz
2
2
0 z + zc
* ∞
z2c
IB3 =
:2
;dz
2
zc z z + zc
* ∞z cos zIB4
dz
2
2
0 z + zc

Ͱ͋ΔɻҎԼʹࣔ͢ੵ෼ެࣜ [68]
* ∞
* x
cos t
cos t − 1
Ci (x) ≡ −dt = ε + ln x +
dt
t
t
x
0

෇࿥

(A.15)(A.16)(A.17)(A.18)(A.19)

Λ༻͍Δͱɺ

IB1 = ε + ln zcͱͳΔɻ·ͨɺIB2 , IB3 ʹ͍ͭͯ͸ɺ
* π/2
1
IB2 =
tan udu = ln 2,
2
0

!
"
z
u ≡ arctan
zc
!
"
* π/2
1
z
−1
IB3 =
tan vdv = ln 2,v ≡ arctan
2
zc
π/4

ͱॻ͚Δɻ࠷‫ ʹޙ‬IB4 Λ‫ٻ‬ΊΔɻҎԼʹࣔ͢ੵ෼ެࣜ [68]* ∞=x cos(ax)
1 < aβ
−aβ
dx
=
e
E
(aβ)
+
e
E
(−aβ)
, (a > 0, β > 0)1
̍β2 + x2
20E1 (x) =Λ༻͍Δͱɺ

IB4 =

* ∞
x

e−t
dt
t

0
1 / zce E1 (zc ) + e−zc E1 (−zc )2(A.20)(A.21)(A.22)(A.23)(A.24)(A.25)

ͱͳΔɻΑͬͯɺࣜ A.14 ͸ɺ
8=9
1 < ωCSA TCDS−ωCSA T CDS
IB = 2 ε + ln(ωCSA T CDS ) + e
E1 (ωCSA T CDS ) + e
E1 (−ωCSA T CDS )(A.26)2
ͱॻ͚Δɻ
ਤ A.4 ͷɹ f (x), g(x) Λ༻͍Δͱɺ8
90
1/
IB = 2 ε + ln(ωCSA T CDS ) +f (x) − g(x)2

(A.27)

A.3. CSA ճ࿏ͷϊΠζͷಋग़ਤ A.4: f (x), g(x) ͷৼΔ෣͍ [70].

113

114

෇࿥A

෇࿥

ͱॻ͚Δɻ͜͜Ͱɺx ≡ ωCSA T CDS Ͱ͋Δɻx ≫ 1 Ͱ͋Δ͔Βɺਤ A.4 ΑΓ | f (x)| ≪ 1, |g(x)| ≪1ɻ͕ͨͬͯ͠ɺ
IB ≃ 2 [ε + ln (ωCSA T CDS )](A.28)
ͱͳΔɻҎ্ΑΓɺ‫ٻ‬ΊΔࣜ A.1 ͸ɺ

8
!
"9
1
Nf n
T CDS
vout ≃ 2γth kB T ξn
+ 2γf 2 ε + ln
gm n β2F τCSA
τCSA
βF
2

1

(A.29)

ँࣙຊम࢜࿦จͷࣥචʹ͋ͨΓɺͨ͘͞Μͷํʑͷ͝ࢦಋɾ͝ࢧԉΛ͍͖ͨͩ·ͨ͠ɻ͜ͷ৔Λ͓आΓͯ͠ɺ͓ྱਃ্͛͠·͢ɻ௽‫ڭ‬तʹ͸ɺ࣮‫ݧ‬΍ղੳɺ݁Ռͷٞ࿦ɺϓϨθϯςʔγϣϯʹࢸΔ·Ͱɺ༷ʑͳ͝ࢦಋ
Λ͍͖ͯͨͩ͠·ͨ͠ɻࢲͷ‫ڵ‬ຯΛଚॏͯͩ͘͠͞Γɺ΍Γ͍ͨͱ‫ͱͨͬ͜ݴ‬Λ‫ޙ‬ԡ͍ͯͩ͘͠͠͞·ͨ͠ɻ͍ͭ΋਌਎ʹ࿩Λ͖͍͓͔ͯͩͬͨ͛͘͞Ͱɺ͜ͷೋ೥ؒɺ‫ݕ‬ग़‫ث‬։ൃΛશ͏͢Δ͜ͱ͕Ͱ͖·ͨ͠ɻాதॿ‫͔ڭ‬Β͸ɺ࣮‫ܭݧ‬ը΍ղੳख๏ɺ݁ՌͷղऍͳͲɺ͍ͭ΋త֬ͳॿ‫ݴ‬Λ͍͖ͨͩ·ͨ͠ɻಛʹۤखҙࣝͷ͋ͬͨจষͷॻ͖ํʹ͍ͭͯɺ೤৺ͳ͝ࢦಋΛ͍͖ͯͨͩ͠·ͨ͠ɻ಺ాॿ‫ʹڭ‬͸ɺ࣮‫݁ݧ‬Ռͷٞ࿦ʹࠜ‫ͬ߹͖෇͘ڧڌ‬͍ͯͩ͘͞·ͨ͠ɻ͍ͭ΋Ӷ͍ࢹ఺ͰΞυόΠεΛͩ͘͞Γɺಓ‫ے‬Λ͍ࣔͯͩ͘͠͞·ͨ͠ɻ͓ࡾํ͔Βɺຊ౰ʹͨ͘͞Μͷ͜ͱΛֶͼ·ͨ͠ɻଔ‫ޙۀ‬΋‫ͬࢥͱ͍͖͍͔ͨͯ͠׆‬͓ͯΓ·͢ɻ
ಉ X ઢάϧʔϓͷֶੜͷํʑʹ΋େม͓ੈ࿩ʹͳΓ·ͨ͠ɻඌۙ͞Μ͔Β͸ൃදͷ࢓ํ΍จষͷ૊ΈཱͯํͳͲΛֶͼ·ͨ͠ɻ‫ڞ‬௨ͷझຯ΋͍͔ͭ͋͘Γɺಛʹཱྀͷ࿩Ͱ੝Γ্͕Γ·ͨ͠ɻՂࢁ͞Μʹ͸Կ΋Θ͔Βͳ͍ M1 ͷࠒ͔Β XRPIX ΛखऔΓ଍औΓ‫ͯ͑ڭ‬͍͖ͨͩ·ͨ͠ɻಉ෦԰ͷ஥ؒͱͯ͠΋ɺ೔ʑͷࡶஊ͕‫ڀݚ‬ͷଉൈ͖ʹͳΓ·ͨ͠ɻఱ໺
͞Μ͸ɺ‫ڀݚ‬΍࿦จࣥචͳͲͰ౓ʑ੾Ӌ٧·͍ͬͯͨࢲͷ͜ͱΛɺ͍ͭ΋‫͚͔ͩͯ͘ʹؾ‬
͍͞·ͨ͠ɻఱ໺͞Μ͸େมͳͱ͖΋೪Γ‫͘ڧ‬औΓ૊ΜͰ͍ͯɺ͔͍͍ͬ͜ઌഐͰ͢ɻ།
Ұͷಉ‫͋Ͱظ‬Δদా͘Μͱ͸ɺຖ೔ͷΑ͏ʹଞѪ΋ͳ͍࿩Λ͠·ͨ͠ɻ៉ྷͳ༦ম͚ͷ೔ʹΑ͘Ұॹʹ‫͍ͨͬʹݟ‬ͷ͕ջ͔͍͠Ͱ͢ɻम࢜࿦จΛ৐Γ੾Δ͜ͱ͕Ͱ͖ͨͷ΋ɺদా͘Μͷଘࡏ͕େ͖͍Ͱ͢ɻࢲͱদా͘Μͷਐ࿏͸ҟͳΓ·͕͢ɺ͜Ε͔Β΋͓‫ؤ͍ޓ‬ுΓ
·͠ΐ͏ɻ‫ޙ‬ഐͷখࣲ͘Μ͸͍ͭ΋໌Δͯ͘‫ؾݩ‬Λ΋Β͍·ͨ͠ɻ·ͨҰॹʹ͝൧ߦ͖·͠ΐ͏ɻΨϯϚઢάϧʔϓͷօ͞·ʹ΋‫ँײ‬ਃ্͍͛ͨ͠Ͱ͢ɻ͓‫͍ޓ‬ͷ‫಺ڀݚ‬༰Λٞ࿦͢Δͷ͸ͱͯ΋ܹࢗʹͳΓ·ͨ͠ɻͦΕ͚ͩͰͳ͘ɺ‫ڞ‬௨ͷझຯͷํ΋ͨ͘͞Μ͍Βͬ͠ΌΓɺ‫ډ‬৺஍ͷྑ͍‫ͨ͠Ͱࣨڀݚ‬ɻXRPIX άϧʔϓͷํʑͱ΋ zoom ϛʔςΟϯά΍ֶձͳͲͰ
͓ੈ࿩ʹͳΓ·ͨ͠ɻਂ͍ٞ࿦Λ͢Δ͜ͱ͕Ͱ͖ɺ͞·͟·ͳ஌‫ݟ‬ΛಘΔ͜ͱ͕Ͱ͖·ͨ͠ɻͦͷଞʹ΋ɺ͜͜ʹ͸͖͋͛Ε·ͤΜ͕ɺͨ͘͞Μͷํʑʹࢧ͑ΒΕ·ͨ͜͠ͱΛɺ৺ΑΓ‫͢·͍ͨ͠ँײ‬ɻ࠷‫ʹޙ‬ɺ͍ͭ΋ࢲʹ‫͚͔ʹؾ‬ɺࢧ͑ͯ͘ΕͨՈ଒ɺ༑ਓɺαʔΫϧ஥ؒʹਂ͘‫͠ँײ‬ɺຊम࢜࿦จΛకΊ͍ͨͱࢥ͍·͢ɻ117ࢀߟจ‫ݙ‬[1] Event Horizon Telescope Collaboration, K. Akiyama, A. Alberdi, et al., First M87 Event
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