Corporate Profile
The pioneer of GaOTM power device withworld-record performance SEMI ecologyTM

April 2, 2021
FLOSFIA Inc.

Copyright ⓒ2020 FLOSFIA Inc. All rights reserved

FLOSFIA : The pioneer of GaO TM power device(As of April 1, 2021)

Trade Name

FLOSFIA INC.

Head Office1-29 Goryo-Ohara, Nishikyo-ku, Kyoto

Business(1) Development and manufacture ofnext-generation semiconductor materials “gallium oxide” (GaOTM) devices(2) Development and manufacture of new electronic materials and industrial materials produced
by MIST DRYTM method

Establishment

CapitalManagementOfficersShareholders(excluding individualinvestors)

Number ofEmployees

March 31, 2011
4,208 million yen (including capital reverse)
President: Toshimi Hitora [CEO]Director: Fujio Okui [COO]
Director: Takashi Shinohe [CTO]
Director: Chinami Majima [CFO]
Outside Director: Yasuo Nishiguchi (Part-Time)
Outside Director: Naonori Kurokawa (Part-Time)
Outside Director: Satoshi Yamaguchi (Part-Time)
Full-Time Auditor: Kazuyuki Nishida
Outside Auditor: Hideki Tsuji (part-time)
Outside Auditor: Tatsuo Mori (part-time)

Toshimi Hitora
President and CEO

Fujio OkuiCOOTakashi ShinoheCTO

Brother Industries, Yaskawa Electric, Mitsubishi Heavy Industries, DENSO, SPARX Asset Management (MiraiCreation Fund), JSR, SBI investment (Mitsui Kinzoku-SBI Material Innovation Fund), Fujimi Inc.

University of Tokyo Edge Capital, Nissay Capital, Miyako Capital, Energy Environmental Investment,
Eight Roads Ventures, Kyoto University Innovation Capital, etc.
[57]

Copyright ⓒ2021 FLOSFIA Inc. All rights reserved2

Award Record
Japan Venture Award 2019, Semiconductor of the Year 2020, and more
▼ November, 2011 IBTEC（Intel & UC Berkeley）▼ August, 2017

First Finalist as Japanese company[University venture award]
Prize-winning▼ March, 2017 JEITA [ 2nd Venture Award]▼ April, 2019
[Intellectual property Award]

Prize-winning▼ June, 2018 METI [J-StartUp]
Nomination▼ January, 2019
[Japan Venture Awards 2019]
METI Prize-winning▼ April, 2017 MUFG「Rise Up Festa」
Prize-winning

Copyright ⓒ2021 FLOSFIA Inc. All rights reserved▼ June, 2020
Electric Device Industry News
[Semiconductor of the Year]
Grand prixs-winning3Overview
FLOSFIA Commercialized Innovative“Gallium Oxide Power Device” Fastest in the World
1. Power Device Market Expansion

2. GaO™ Power Device Key Advantages
3. GaO™ Power Device Business Model
4. GaO™ Power Device Growth Strategy
5. Film-Deposition Synthesis Technology Platform

Copyright ⓒ2021 FLOSFIA Inc. All rights reserved4

1. Power Device Market Expansion
Power Device is a Key Solution to Connect
Digital Technology and Environmental Management
What is a Power Device?

•Power Device inEverywhere & Every Application

Key solution to manage electricity
in “Smarter Way” at Industry 5.0 /CASE / IoTTransportation•Cover wide-range voltages fromUltra High to Ultra Low acrossvarious industries

Power GridElectricVehicle

Power-FlowFactoryAutomation

SolarWhiteGoodsData CenterConsumer
ProductCopyright ⓒ2021 FLOSFIA Inc. All rights reserved51. Power Device Market Expansion
Power Devices Satisfying Three Requirements are Expected:
High Functionality, Energy Saving, and Low Cost
Environmental management is a key issue for the SDGs
More than 10% of total power generation is lost when conversion.
Needs for improved conversion efficiency and increased loss suppression.

SEMI ecology TM

CASE and IoT-based packaging for higher functionality and lower costs
Demand for low-loss and compact of power supplies and inverters increases.
Need for sufficient supply of high-performance and low-cost power devices
to support the rapid growth of the market
HighPerformance

New market launch toward 2030

SolutionEV

EnergySavingLow Cost39200
million Yen

434.4
billion Yen

9300
million Yen

123.0
Billion Yen

16200
million Yen

162.0billion Yen

Source: Our estimates for the electric vehicle market,
Our estimates for the industrial, consumer, and information and communications equipment areas are based on Fuji Economy‘s “Current Status and Future of the market for theNext-Generation Power Device and Power Electric-Related Equipment Market” in 2018 edition.

Copyright ⓒ2021 FLOSFIA Inc. All rights reserved61. Power Device Market Expansion
Growing Power Device Markets and Growing Expectations for GaO™ Power Devices[Global Market Size Projection]

Rise of gallium oxide power devices[Million USD]

・ Replacing Existing Power Devices

50,000・ Growth in new business areas

Ga2O3 1,542

45,000

GaN 986
40,000

SiC 3,845

35,000Power IC

30,00025,00020,000Module15,000Thyristor / Triac

10,000Transistor
5,000

Diode02016

2017

Copyright ⓒ2021 FLOSFIA Inc. All rights reserved

2018

2019

2020

2021

2025

2030

Source: Fuji Economy “Current status and future of the market for Next-Generation Power Devices and PowerElectronics-Related equipment” in 2018 edition.

7

2. GaO™ Power Device Key Advantages
Achieve Ultra-Low Loss and Low Cost with Original Approach Using
Corundum-Type Gallium Oxide
Existing material Si

SiC

State-of-the-arts material α-Ga2O3High loss

Low-loss

Ultralow loss

1.1eV

3.3eV

5.3eV

1340

6,726(estimated)

Material

Bandgap

Loss

Baluga figureof merit(εμEc3)

Cost

Technology&BusinessStage

Low cost
Si exponential
comparison

1Monopolize the marketMature process technology

Copyright ⓒ2021 FLOSFIA Inc. All rights reservedHigh cost10

No progress ofmarket introduction due
to high cost

Low cost
1 or less

Advantages ofMaterial Properties
Higher value
Low loss!

Know-how advantage
Reducing costs throughoriginal approach!

Only FLOSFIA can manufacture single
crystals- Exclusive protection of GaOTM- [170+] granted and [550+] pending
patents8

2. GaO™ Power Device Key Advantages

World’s First Mass Production of Gallium Oxide Power Device

New material found by Kyoto University"α-gallium Ga2O3(gallium oxide)"

Large Implementation Hurdle but Low Attention"No proof data on semiconductor characteristics""No device verification data"“p-type semiconductors are difficult to achieve."“Thermal conductivity is poor and difficult to use.”
All Clear !

For the first time in the world
corundum-type Gallium Oxide
Power Device
・ Utilize sapphire substrate commoditized in use in LEDs
・ Discovery and utilization of new p-type semiconductors
for breakthroughCopyright ⓒ2021 FLOSFIA Inc. All rights reserved

92. GaO™ Power Device Key Advantages

Achieve “Ultra-Low Loss" at Product Level
Low‐temperature resistance
GaO™ device

Other materials SiC

High frequency propertyFast switching confirmed!

0.7mΩcm2

With on-resistance
ON Resistance[mΩcm2]

86%
reduction!

World's topData

0.1mΩcm2

SBD of other companies
Copyright ⓒ2021 FLOSFIA Inc. All rights reserved

FLOSFIA SBDs
10

3. GaO™ Power Device Business Model

Semi-Fabless Model for Vertical Business Launch with Optimal Investment
Key StrengthSemi-Fabless・ Focus on Core Technology
・ Fully utilize external experienced partners
・ High Flexibility against market needs and demand fluctuation
Feedback of user needs to own platform
Intellectual property

Know-how

Substrate

In-house production
Outsourced manufacturing (global partners)(Know-how)

Designing

Copyright ⓒ2021 FLOSFIA Inc. All rights reserved

Epitaxy
Wafer

Front-end
process

Postprocess

Discrete
ModuleUser113. GaO™ Power Device Business Model

Powerful IP Portfolio
to Support Unique Business Model and Prevent New Entry
Focus on acquiring IP(intellectual property)

・ Over 550 patent applications
・ About 170 patents have already been granted
Strong basic patents (material patents)
obtained
Patents reinforced by a wide range of
peripheral patents
Worldwide patent portfolio
Received the Minister of Economy,
Trade and Industry Award as anexcellent company actively using
intellectual property right system

Copyright ⓒ2021 FLOSFIA Inc. All rights reserved

124. GaO™ Power Device Growth StrategyBusiness Expansion from Medium-Voltage Market toHigh-Voltage & Low Voltage and Establish World Standard!
FLOSFIA Short-Term Target Markets

I [A]
2,00011•EV

FLOSFIA Mid-Term Target Markets

1,00010

•
•

5009

•

2008
100 7

• Automotive•(EPS・ABS・Injector)

•506
•

205
104

PC&Mobile(DC/DCConverter)

•

•

53

HDD

•

Communicationequipment power
supplyHigh-frequency
circuit(For basestations, etc.)•••

EV, HEVGeneral-purpose
inverters
Industrial power
conditioners••Power mains
system equipment

Train distribution
system equipment

Industrial Motor

Home Appliance[Inverter]
Household power
conditioners
AC adapter/power
supply (PFC)
UPS server
SW power supply andlighting equipment•Large Medical
Equipment andIndustrial Equipment

2211101020
203050Low-voltage market(1 trillion Yen)
Copyright ⓒ2021 FLOSFIA Inc. All rights reserved

40
100

50
20060
500

70
1,000

Medium-voltage market(400 billion Yen)

80
2,00090
5,000

100
10,000E [V]High-voltage market(200 billion Yen)
134. GaO™ Power Device Growth Strategy
Development of Transistor (MOSFET) as Next Pipeline for Steady Progress

2023

2019

2023

GaOTM Module
MOSFET
Commercialization Commercialization

Actual Proof of outperformance by
GaOTM MOSFET
to commercialized SiC device

cc

2021

SBD
Commercialization

2018

cc

Adoption ofnational projects(Cabinet Office SIP)

2016

cc

2018
MOSFET Operation
Verification SuccessedAchievement of higher channel mobility(Normally Off)Patentapplication

Successful demonstrationof concept at device level

High Electron Channel Mobility(cm2/Vs)

13080

72

SGD

Patentapplication

Copyright ⓒ2021 FLOSFIA Inc. All rights reserved

Material breakthroughs(Joint research with Kyoto University)

30

SiCGaOTM

14

5. Film-Deposition Synthesis Technology Platform

Building Unique Platform Utilizing MIST Technologies
Platform for Film Deposition Synthesis Technologyby using MIST DRY™ method
Thermistors

MIST EPITAXY ™
Focus on ceramic
parts

Semiconductor
layerPower device

Battery material
IoT device
Film devices
Filter, plating
Functional Materials forElectronic Devices

Start of sample shipment!
Fuel cell separator

Film formation on wafers(Larger diameter)

8inches

MIST DRY™ and s other mivarioust technologies

Rhodium plating on polyimideBefore coatingGold plating on 4inch wafers

After coating

Copyright ⓒ2021 FLOSFIA Inc. All rights reserved

15

Utilizing the flow of knowledge and know-how,Contributing to Human Development
Companies gathered flow from various kinds of sophia,
I would like to further refine this sophia and flow it to contribute to theprogress of humans.
We have named this type of shape we aim at ‘‘ ..etc....

Thank you for being utilized in the world and being connected with theworld, learn and grow in it, and as a existence that will well satisfy thecommunity and society.
We hope that it will connect again.

Copyright ⓒ2020 FLOSFIA Inc. All rights reserved