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素粒子原子核研究所

OUTLINE
1. SOISOI Pixel
2. SOI Pixel Detector
3.







1.SOISOI Pixel
SOI : Silicon-On-Insulator

SOI Transistor 0Pixel (Hybrid Pixel)

•  - +5>68?:674 (/2&#;@=/12 ,3'• / $'• .!*"/)3'• "/137<-90'%

3;89< 43$•%!7-0,(~10 um)•>7-0,•;89<2)1 7",0,(intelligent)•=?:>&5 /(7-0,(~frame/100ns)•7-0,(monolithic)• 1'76/0,(.50um~600um)
Silicon-On-Insulator (SOI) #7 /0
Monolithic Pixel +*Bulk and SOI (Silicon On Insulator) Wafer
50-400 nm

circuit650 μm (Bulk Wafer)

20-200 nm
TopSi (SOI Layer)
circuitBOX()PhysicalSupport
SOI Wafer

SOI Pixel• :1.- )0&1.- )0 46* %+'• :1.-8    2,"#!$• 46*

3 9"#!$(7 /5• J$/@JB;3R?C>OQP<Monolithic Radiation Sensor:IDG%)J 2

• 74@CB;J=7+H
AJS/N@OQP<• ,6J %0R WSUYKFEOQP<• 8Z\V;81.MD@ *<• ") @JB;8-* ; @NP<• &'L!#X[UTRK5(<9SOI Pixel Process Flow
SOI (40 nm)
Box (BuriedOxide)(200 nm)

650um

Handle Wafer

p+n+Handle Wafern+Handle Waferp+50~650um

AlOKI 0.2 μm FD-SOI Pixel Process
Process

0.2μm Low-Leakage Fully-Depleted SOI CMOS (OKI)
1 Poly, 4 (5) Metal layers, MIM Capacitor, DMOS option
Core (I/O) Voltage = 1.8 (3.3) V

SOI wafer

Diameter: 200 mm,Top Si : Cz, ~18 -cm, p-type, ~40 nm thickBuried Oxide: 200 nm thickHandle wafer: Cz700 -cm (n-type), 650 μm thickBackside

Thinned to 260 μm, and sputtered with Al (200 nm).

An example of aSOI Pixel crosssection

Metal contact & p+ implant

1st AlHandle Wafer
Copyright 2007 Oki Electric Industry Co.,LtdSOI Pixel X
keV+~20 keV )%(X.4 150 μm   -(% '$.!#,"+&/1203)%.!-*-

SOI Pixel.103
I<@N1

06FP=UD>AN5-32.%

Photon CountingS"S/N, "B7FKC<OQ>T%
8GN;R% %HCE SH?E=LKQ=T%
PR9NS"T% I<@N%@NJEM:R%...
/',+5*3(103&
1I<@N2

X. )4+!#$1*&($   216 !))*$%#(  "!'$ 
(~1μs

1000 

2. SOI Pixel Detector

KEK SOI Multi Project Wafer (MPW) run    (INTPIX)

128 x 128 pixels
5 x 5 mm2

20 μm x 20 μm pixel
    

DualDiscri

ChargeAmp

Counter

10.4 mm
128 x 128 pix CNTPIX2Pixel

Analog

16bCounterp-n junctions~600 Tr/pixx 128 x 128= 10,000,000 Trs
60x60 um29b Register

DDL

INTPIX2

SOI Pixel Laser Images
2.56 mm2006

2008

0.64 mm32x32128x128X-ray Image
Position resolution

INTPIX2

(pixel size=20μm x 20μm)

slit w=25μm

X-ray Test Chart

25 μm Slit is well separated.

12.5[lp/mm]1620 20

~8 keV X-tayVertical (3D) Integration
ZyCube μ-bump bonding (~5 um pitch)  .μ-bumps fabrication

Copyright 2009 OKI semiconductor Co. Ltd.



Cross sectional view of detector array(After stacking)

BOX(UC)SOI(UC)Interlayer (UC)5madhesive
-bumpInterlayer(LC)SOI (LC)BOX (LC)

Bulk-Si

SNU•SOI PixelR.dqarN3 H^o_gph_c[HJ'+O.]mrbdqar>•i_dn$P:"/Ofre '4[5 !=!
/M@KJWBO1%[/PIZ>•&FQWBOajl_pqSOIi_dnQkpdcC !ZQR=)MV?Q`nrkQTM@Z>•GXP8,[EZJUP=3#,0PV Y-\M
AZ>
• +O 2R !JQM=R4Q:"/ =
9, [Y=( PDL7*[6UZ>;<