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» 54⺃⿠࿕⋧෻ᔕ㧔⴫㕙ᡷ⾰㧕» 㜞ಽሶ⭯⤑૞⵾ᔕ↪଀

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10810721014nm3101.4nm410 Energy [eV]Wavelength [nm]Sumitomo Heavy Industries, Ltd. R&D Center: 2-1-1 Yato, Nishitokyo, Tokyo 188-8585, Japan Tel: +81-424-68-4474 Fax: +81-424-68-4477 

CourtesyCourtesyofofProf.
Prof.SugiyamaSugiyamaTeflon fabrication (TIEGA®)

Research Institute for Nanomachine System TechnologyRINST㪣㪠㪞㪘䊒䊨䉶䉴䈮䉋䉍⵾૞䈚䈢㜞䉝䉴䊕䉪䊃Ყ䈱㕒㔚䊙䉟䉪䊨䊝䊷䉺Ni Structureheight: 100 mmminimum width: 2 mmaspect ratio: 50Applied Volt.: 120VHARMSA/R=20100Pm5PmSample: PTFEFeatures: 25 Pm-honeycombProcessing depth: 500 PmSample: PTFEFeatures: 1 Pm-holeProcessing depth: 12 PmCourtesyCourtesyofofProf.
Prof.SugiyamaSugiyama2 PmSub-PmHARMSA/R=12Research Institute for Nanomachine System Technology

RINST

䊒䊨䉶䉴PCT (Plane-pattern to Cross-section Transfer)䊒㶎 ᣣᧄ㔚᳇䊺䈫౒ห⎇ⓥ4RITUMEIKANCourtesyCourtesyofofProf.
Prof.SugiyamaSugiyamaResearch Institute for Nanomachine System Technology

RINSTPCT䊒䊒䊨䉶䉴䈮䉋䉎䊙䉟䉪䊨䊆䊷䊄䊦䉝䊧䉟䈱ടᎿPainless Drug Delivery System using Micro Needle ArrayX-Ray AbsorberX-rayPMMA (Polymethylmethacrylate) micro needle arrays withthe high-aspect-ratio microstructure have been fabricatedby synchrotron radiation deep X-ray lithography.

X-ray䌄䌯䌳䌥highlowDevelopDeveloprate㺘energy4RITUMEIKAN

CourtesyCourtesyofofProf.
Prof.SugiyamaSugiyamaResearch Institute for Nanomachine System TechnologyRINSTนᄌ䉩䊞䉾䊒ᄙ㊀㔺శ 䋨Variable Proximity Lithography䋩4RITUMEIKANCourtesyCourtesyofofProf.
Prof.SugiyamaSugiyama㪜㫍㪸㫅㪼㫊㪺㪼㫅㫋㩷㫄㪼㪸㫅㫊㩷㩿㪸㫃㫄㫆㫊㫋㪀㩷㪺㫆㫅㫋㪸㪺㫋㫄㪸㫊㫂㩷㪸㫅㪻㩷㫉㪼㫊㫀㫊㫋㪅0.25Research Institute for Nanomachine System TechnologyRINSTนᄌ䉩䊞䉾䊒ᄙ㊀㔺శ䈮䉋䉎 䉰䊑ᵄ㐳ᩰሶ䋨SWG䋩䈱⵾૞0.300.201.00

Mask pattern designed for SWS0.150.100.300.250.00600

400

20002004006000.201.00

㪜㫍㪸㫅㪼㫊㪺㪼㫅㫋Ta absorber: block 300 nm width㪬㫊㫌㪸㫃㫃㫐㩷㫉㪼㫊㫀㫊㫋㩷㪼㫏㫇㫆㫊㪼㪻㫎㫀㫋㪿㩷㫋㪿㫀㫊㩷㫉㪸㫅㪾㪼㪅0.05SiN Membrane: space 100 nm width0.150.100.300.050.250.00600

400

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㪦㫌㫉㩷㪾㫉㫆㫌㫇㩷㪽㫆㪺㫌㫊㪼㫊㩷㫆㫅㩷㫋㪿㫀㫊㩷㫉㪸㫅㪾㪼ʼ 㫊㩷㫀㫅㫋㪼㫅㫊㫀㫋㫐㩷㪻㫀㫊㫋㫉㫀㪹㫌㫋㫀㫆㫅㪅㪧㫉㫆㫏㫀㫄㫀㫋㫐0.20
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㪘㫃㫄㫆㫊㫋㩷㪧㫉㫆㫏㫀㫄㫀㫋㫐6000.150.10

㪘㫀㫉㫐㩷㪧㪸㫋㫋㪼㫉㫅㩷㫀㫅㩷㪾㪸㫇㩷㪇㪄㪊㪇㪇㩷㱘㫄㪃㩷㫊㫃㫀㫋㩷㫎㫀㪻㫋㪿㩷㪉㪌㪇㩷㫅㫄4RITUMEIKAN0.050.00600

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㪧㫉㫆㫁㪼㪺㫋㫀㫆㫅600

㪧㫉㫆㫁㪼㪺㫋㫀㫆㫅㩷㫉㪸㫅㪾㪼㩷㪹㪼㪸㫄㪺㪸㫌㫊㪼㪻㩷㪻㪼㪺㫉㪼㪸㫊㫀㫅㪾㩷㪺㫆㫅㫋㫉㪸㫊㫋㩷㫆㪽㩷㪻㫆㫊㪸㪾㪼㪅Fabrication result of 30 µm gap
4RITUMEIKANFabrication result of 60 µm gap㪜㫏㫇㫆㫊㪼㪻㩷㫍㪸㫉㫀㪸㪹㫃㪼㩷㪾㪸㫇㫊㩷㪸㫋㩷㪈㫊㫋 㪉㪇㩷µ㫄㩷㪸㫅㪻㩷㪉㫅㪻 㪋㪇㩷µ㫄CourtesyCourtesyofofProf.
Prof.SugiyamaSugiyamaResearch Institute for Nanomachine System TechnologyRINSTCourtesyCourtesyofofProf.
Prof.SugiyamaSugiyamaResearch Institute for Nanomachine System TechnologyRINST䊏䉪䉶䊦㔺శ䈮䉋䉎ਃᰴర᭴ㅧ䈱ടᎿ䊏䉪䉶䊦㔺శ䈮䉋䉎ਃᰴర᭴ㅧ䈱ടᎿ

ᔅⷐ䈭DOSE㊂䉕▚಴⋡ᮡᒻ⁁นᄌ䉝䊌䊷䉼䊞䊷䈮䉋䉎䊙䉴䉪䊧䉴ടᎿ䈱᭎ᔨ– 50 [ 1 - sin (x2+y2) ] - 20PMMA ⵾૞⚿ᨐ䋨SEM↹௝䋩18Pm䋨䉝䊌䊷䉼䊞䊷䉰䉟䉵䈱1/4䋩䊏䉾䉼䈱႐ว36Pm䋨䉝䊌䊷䉼䊞䊷䉰䉟䉵䈱1/2䋩䊏䉾䉼䈱႐ว䉥䊷䊋䊷䊤䉾䊒㔺శ䈱ណ↪

䉝䊌䊷䉼䊞䊷䉰䉟䉵䈱ඨಽ䈱䊏䉾䉼(37.5㱘m㬍40㱘m)4RITUMEIKAN

4RITUMEIKAN㜞㨻㩇㩗㩩㩂㩎Ყᓸ⚦ᚑᒻᛛⴚ –㊂↥ဳ኿಴ᚑᒻ኿಴ᚑᒻߦࠃࠆ㜞㨻㩇㩗㩩㩂㩎Ყᓸ⚦ォ౮ᛛⴚ– ࠬ࠲ࡦࡄ࡯㧦㧸㧵㧳㧭⵾– ォ౮㧦㧭㧹㧻㨀㧱㧯㧔὇㉄ࠟࠬዉ౉㧕ᓸ⚦ᚑᒻ߳ߩᔕ↪㧔↥ᬺ೑↪㧕ᓸ⚦㜞ォ౮ᓸ⚦㜞ォ౮቟ቯ㊂↥ᚑᒻ቟ቯ㊂↥ᚑᒻ቟ቯᚑᒻ䌓䌅䋷䋵䌄䌕ዪᚲ᷷⺞᡼኿శᓸ⚦ടᎿ䌌䌉䌇䌁䌁䌍䌏䌔䌅䌃®
㜞ォ౮ᚑᒻ᡼኿శᓸ⚦ടᎿ㜞ARᲧนⷞൻ䉲䊚䊠䊧䊷䉲䊢䊮AMOTEC:Asahi Molding Technology with CO2ᓸ⚦ᚑᒻታᣉ଀ᚑᒻࠨࠗࠢ࡞ ⑽᡼኿శടᎿࠬ࠲ࡦࡄ࡯ߦࠃࠆᓸ⚦ᚑᒻX-lithographySRDevelopingPMMAElectroformingMetal(e.g. Ni)Metal MoldMoldingPlasticProductsPlasticMask100ǴmSubstrate㫄㫆㫃㪻㫀㫅㪾㩷㫎㫀㫋㪿㩷㪚㪦㪉 㩿㪘㪤㪦㪫㪜㪚㪀LIGA Stamper (size: 42x75mm)5 Pm㩿㫊㫀㫑㪼㪑㩷㪉㪏㫏㪌㪌㩷㫄㫄㪀㫍㪼㫉㫋㫀㪺㪸㫃㩷㫀㫅㫋㪼㫉㫍㪸㫃㪑㪈㪇㪅㪌㩷㩿P㫄㪀㪸㫊㫇㪼㪺㫋㩷㫉㪸㫋㫀㫆㫆㪽㩷䋲㪺㫆㫅㫍㪼㫅㫋㫀㫆㫅㪸㫃㩷㫄㫆㫃㪻㫀㫅㪾5 Pm㫍㪼㫉㫋㫀㪺㪸㫃㩷㫀㫅㫋㪼㫉㫍㪸㫃㪑㪇㪅㪊㪎㩷㩿P㫄㪀aspect ratio< 0.1නಽᢔ䉣䊙䊦䉲䊢䊮䋨੃ൻ䋩䊶 ᶧṢ㑆䈱ว৻䉇⋧ಽ㔌䈮ኻ䈜䉎቟ቯᕈ䈱ะ਄䋨䉣䊙䊦䉲䊢䊮䈱ᕈ⁁䊶ຠ⾰቟ቯᕈ䈱ะ਄䋩නಽᢔࠛࡑ࡞࡚ࠪࡦ૞⵾㧔↥ᬺ೑↪㧕䊶 ‛ᕈ䊶ᯏ⢻䈱೙ᓮ䈏น⢻50 Pm䋨☼ᕈ䇮ṁ⸃ᕈ䇮ᄖⷰ䇮䊐䊧䊷䊋䊷䇮↢૕ౝ䈱᜼േ䋩࿕૕ൻ䊶䉭䊦ൻ䊶䉦䊒䉶䊦ൻ䈭䈬නಽᢔ䉣䊙䊦䉲䊢䊮䉕ၮ᧚䈫䈚䈢వㅴ䊙䉟䉪䊨᧚ᢱ౒ห⎇ⓥ⠪䋻ਛ᎑శᢅ ᢎ᝼䋨╳ᵄᄢቇ䋩ዊᨋ ഞ ඳ჻䋨㘩ຠ✚ว⎇ⓥᚲ䋩නಽᢔ࿕૕䊶䍗䍼䍷ᓸ☸ሶනಽᢔ䍭䍐䍖䍹䍔䍪䍽䍜䍷නಽᢔᄙ⋧䍒䍭䍷䍚䍌䍻㪧㪤㪤㪘⵾⽾ㅢሹဳ㪤㪚ၮ᧼䈱ᮨᑼ࿑䊙䉟䉪䊨䉼䊞䊈䊦䋨㪤㪚䋩੃ൻਥ䈭․ᓽ

਄㕙࿑䊶 ᄌേଥᢙ5%એਅ䈱නಽᢔ䉣䊙䊦䉲䊢䊮䈱⵾ㅧ䊶 ᓸዊⓨ㑆䈪䈱⇇㕙ᒛജലᨐ䉕ᵴ↪䈚䈢⥄⊒⊛ᄌᒻ䈮䉋䉎ᶧṢൻ⍱ᒻ⽾ㅢሹဳMC⍱ᒻ⽾ㅢሹဳMC
䋨䉼䊞䊈䊦ᢙ䋺⚂3.1ਁᧄ䋩䋨䉼䊞䊈䊦ᢙ䋺⚂3.1ਁᧄ䋩10 mm

ᐔ᧼ḴဳMC䉝䊧䉟੃ൻ䊂䊋䉟䉴

⽾ㅢሹဳMC䉝䊧䉟ಽᢔ⋧䉼䊞䊈䊦䊁䊤䉴
੗ᚭㇱᓸዊᶧṢㅪ⛯⋧
䉼䊞䊈䊦Kawakatsu et al., JAOCS (1997)Sugiura et al., Langmuir (2001)ᶧṢᓘ▸࿐ᶧṢ↢↥ᕈ24 mmKobayashi et al., AIChE J. (2002)1䌾100 Pm5䌾50 Pm0.01䌾1 g/h1䌾200 g/h䋨⋡ᮡ䋺1kg/hએ਄䋩⍱ᒻ䉼䊞䊈䊦
⍱ᒻᢿ㕙䉕᦭䈜䉎ᓸ⚦⽾ㅢሹ䈱䉝䊧䉟ၮ᧼ෘ䈘䋺200 Pm㪧㪤㪤㪘⽾ㅢሹဳ㪤㪚ၮ᧼㪮㪆㪦䉣䊙䊦䉲䊢䊮૞⵾䋨TMCTMC-A䋻 L: 24.3 Pm, S: 6.9 Pm, ᷓ䈘:ᷓ䈘: 200 Pm䋩

LS: 5.8 PmL: 19.5 PmL/S: 3.41.8 kPaᢿ㕙㗼ᓸ㏜↹௝਄㕙㗼ᓸ㏜↹௝200 PmS- ಽᢔ⋧䋨W+ 䉫䊥䉶䊥䊮 (1:3 (w/w)) [33.9 mPa s]ಽᢔ⋧䋨W䋩䋺5.0䋩䋺5.0 wt%Ⴎൻ䊅䊃䊥䉡䊛᳓ṁᶧwt%Ⴎൻ䊅䊃䊥䉡䊛᳓ṁᶧ+(w/w- ㅪ⛯⋧䋨OCR-310䊶䊂䉦䊮ṁᶧ310䊶䊂䉦䊮ṁᶧ [1.0 mPa s]ㅪ⛯⋧䋨O䋩䋺3.0䋩䋺3.0 wt% CR૞⵾䈘䉏䈢W/O䉣䊙䊦䉲䊢䊮૞⵾䈘䉏䈢W/O䉣䊙䊦䉲䊢䊮⍱ᒻ䉼䊞䊈䊦200 PmS䌁䋯䌒䋾䋳䋰50 PmChannel

LL: 㐳ㄝ㐳䈘S: ⍴ㄝ㐳䈘50 Pm↢↥㊂㧩1g/hr䋨⚂18,000୘/s䋩⍱ᒻ䉼䊞䊈䊦䈱㪐㪐㩼એ਄䈎䉌නಽᢔᓸዊ᳓Ṣ䉕૞⵾䊧䊷䉱䊷 㫍㫊 ᡼኿శᔕ↪଀䊧䊷䉱䊷– ૐ䉣䊈䊦䉩䊷– 㜞ᒝᐲ㪣㪸㫊㪼㫉䋨㪉㪋㪏㩷㫅㫄䋩᡼኿శ– 㜞䉣䊈䊦䉩䊷㪘㪬㪩㪦㪩㪘– ૐᒝᐲ– ⴫㕙ᡷ⾰ 㩿㪪㪩㩷㫍㫊㪅 㪣㪸㫊㪼㫉㪀– 䌘✢ዮ᛬䊧䊮䉵㪈㪇㪇– 㪧㪫㪝㪜⭯⤑૞⵾㪈㪇 㪈㪈㪇㪉㪈㪇㪊ᒝᐲ䈣䈔䈪䈲㆐䈚ᓧ䈭䈇ᣂ䈚䈇෻ᔕ㪈㪇㪋᡼኿శ⺃⿠෻ᔕ㪧㪟㪦㪫㪦㪥㩷㪜㪥㪜㪩㪞㪰㩷㪲㪼㪭㪴
QMS analysis

㪧㪫㪝㪜ಽ⸃䊜䉦䊆䉵䊛䊧䊷䉱䊷 㪑㩷ᾲ⊛ 㩿㪧㪿㫋㫆㫋㪿㪼㫉㫄㪸㫃 㪬㫅㫑㫀㫇㫇㫀㫅㪾㪀䊒䊨䉶䉴– 㪚㪝㩿㪊㪈㪀㩷㪄㪄㪄㪕㩷㫅㩿㪚㪉㪝㪋㪀㩷㪑㩷㫄㫆㫅㫆㫄㪼㫉(.CUGT(%(((%%%(((PCF3+SR etching(Perfluoro-n-alkane(%%((CF+C+C2F3+CF2+Laser ablation

Monomer, C 2F4᡼኿శ 㪑㩷శൻቇ⊛ 㩿㪧㪿㫆㫋㫆㪺㪿㪼㫄㫀㪺㪸㫃㩷㪛㪼㪺㫆㫄㫇㫆㫊㫀㫋㫀㫆㫅㪀䊒䊨䉶䉴– 㪚㪝㪊㩿㪍㪐㪀㩷㪄㪄㪄㪕㩷㪚㫅㪝㪉㫅㪂㪉 㪑㩷㫊㪸㫋㫌㫉㪸㫋㪼㪻㩷㪽㫃㫌㫆㫉㫆㪺㪸㫉㪹㫆㫅㫊((%%((020Pyrolysis54(P((((%%%%((((4060Mass (amu)80100(SR etching and SR induced reactionResults (DSC analysis for modified regions)@ 140 oCSR X-raySR : High dose rateSRPTFE

Ԙ340 Pm

ԙ245 Pm

Ԛ100 Pm

ԛ50 Pm

Ԝat the surface : 2-3 MGy/sScission + DesorptionPTFE500 PmExothermic [arb.unit]original PTFE50Pm< 50Pm : 2 MGy/s – 50 kGy/sformation of high density-radicals

Ԙ

ԙ

Ԛԛ

Ԝmodifiedmodified region of thin film:280 290 300 310 320 330Temperature [ oC]-CROSSLINKED PTFE @ 140 oCPTFE> 50Pm : < 50 kGy/sScissionActivation of the molecular motionin amorphous regionCrosslinking @ 140 oCX-ray refractive lensesFᔕ↪଀F= R/2G, G= 1-n ~10-6R= 100 Pm, F= 50 m4FSingle lens4 ࡮࡮࡮ 0FN= R/2NGN= 100, FN= 0.5 m4 parabolic lens2D-SingleCompound lens– ⴫㕙ᡷ⾰ 㩿㪪㪩㩷㫍㫊㪅 㪣㪸㫊㪼㫉㪀– 䌘✢ዮ᛬䊧䊮䉵– 㪧㪫㪝㪜⭯⤑૞⵾F= R/2G,R= 1 Pm, F= 0.5 m4Single parabolic lens1D-SRL: one dimensionExperimental400Pm

SPring-8 (8 GeV, 100 mA)– Performance test– Direct writing using x-ray lens» Photon flux @ 10 keV:1.1 x 1011 ph/s mm20.1%bw]» Photon flux:TIEGA: 2.5 x 1014 ph/s mm2» Material: PTFEx2z+d=2010Pmwhite light (A2S)179PmTIEGA109Hyogo BL (SP8)yz

2Aurora-2S (700 MeV, 600mA)– Fabrication of x-ray lensesPhoton Flux [ph/s mA mm

x2=2Rzd=10Pm108107102103Energy [eV]3.4 Pm104Figure: SEM photos of a single refractive lensmade of PTFE (top) and close-up view of thelens(bottom).
IFocusing a beam of hard x-ray (10keV, 200Pm )2D-SRL: two dimension - ARRAY
2D-SRL: two dimension - LRAGE APERTUREFocusing in twodimensionsFocusing in two dimensions2D focusing160 Pm1D focusing~ 800 Pm100 Pm1 mm60 PmFocal spots:179 Pm (aperture)focal spot : < 10 Pm (2D lens)gain G = 40 @ 10 keVfocal spot : < 5 Pm (2D lens)gain G = 400 @ 10 keV100 PmMask-less direct writing using x-ray lenssamplestagesmicro-beamᔕ↪଀xelimination of focal linesSRyz– ⴫㕙ᡷ⾰ 㩿㪪㪩㩷㫍㫊㪅 㪣㪸㫊㪼㫉㪀X-ray lens– 䌘✢ዮ᛬䊧䊮䉵10 Pm– 㪧㪫㪝㪜⭯⤑૞⵾QuickTimeý Ç²ÉtÉHÉg - JPEG êLí£ÉvÉçÉOÉâÉÄÇ™Ç±ÇÃÉ sÉ NÉ `É ÉÇ¾å©ÇÈ Ç…ÇÕïK óvÇ-Ç Å B100 PmExperimentalSurface morphologies

Target: Teflon (PTFE) (Tt= RT to 200 oC)Substrate: Si(100)Distance between target and substrate: 2 - 3 cm

Base pressure: 5x10-8 Torr

Beam current: 100 to 300 mA(a) micromachining(Ts= RT to 200 oC)PTFE targetSRmaskAURORA(b) depositionSR lightPTFE targetslit (2 x 25 mm)SRfilter (Al, Be)Si substrate(a) SR(b) pyrolysis(c) ps UV laserOrientation of films (SR etching)Orientation of films (laser or pyrolysis)// c-axisorientation)A2(3) band position– Laser: 513 cm-1
–SR:(b) ǰ = 80qE1(4)E1 : dipole moment 㼠 chain axis(perpendicular bands )A2 : dipole moment // chain axis(parallel bands )(a) ǰ = 0q

A2(2)ӆ c-axis532 cm-1 (blue-shift)E1(2) E (3)1(a)A2 (3)Main chain of films deposited bySR etching are almost perpendicular to the substrate.

(b) ǰ = 80qTransmissionMain chain of films deposited bylase(or pyrplysis) are parallel tothe(parallelsubstrate.

TransmissionA2(2) A2 (3)(a) ǰ = 0qE1(4)ӆ c-axis(perpendicular orientation)// c-axisE1(2) E1(3)(a)IRIR1500(b)Si substrate10001500500Wavenumber (cm-1)
FTIR spectra of the PTFE film deposited by laser ablationor pyrolysis. (a): a spectrum for the normal incidence(ǰ = 0q), (b): the glancing incidence (ǰ = 80q)(b)Si substrate1000500Wavenumber (cm-1)
FTIR spectra of the PTFE film deposited by SR etching.
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