Complementary MOSFET
ELM52527CWA-N■General Description

http://www.elm-tech.com■Features

ELM52527CWA-N uses advanced
trench technology to provide excellent
Rds(on) and low gate charge. ESD
protection is included.

N-channel

P-channel• Vds=20V• Id=4.5A• Rds(on)=19mΩ(Vgs=4.5V)• Rds(on)=23mΩ(Vgs=2.5V)• Rds(on)=34mΩ(Vgs=1.8V)• ESD protection■Maximum Absolute Ratings
Parameter

SymbolVds

Drain-source voltage
Gate-source voltage

Vgs
Ta=25°C
Ta=70°C

Continuous drain current(Tj=150°C)

IdPulsed drain current

Idm
Tc=25°C
Tc=70°C

Power dissipation

Pd

Operating junction temperature
Storage temperature range

TjTstg• Vds=-20V• Id=-4.5A• Rds(on)=42mΩ(Vgs=-4.5V)• Rds(on)=52mΩ(Vgs=-2.5V)• Rds(on)=68mΩ(Vgs=-1.8V)• ESD protection

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
20-20
V
±124.54.5±12-4.5-4.5

V

20
7.8
5.0-20
7.8
5.0

A

150
-55 to 150

150-55 to 150°C°C

Typ.

Max.
52.0

UnitAW■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient

SymbolRθjaDevice
N-chThermal resistance junction-to-ambient
Thermal resistance junction-to-case
Thermal resistance junction-to-case

Rθja
Rθjc
Rθjc

P-ch
N-ch
P-ch

■Pin configuration
DFN6-2×2(TOP VIEW)

52.0
12.5
12.5°C/W°C/W■Circuit
Pin No.
1

Pin name
SOURCE1

2

GATE1

34

DRAIN2
SOURCE256

GATE2DRAIN1• N-ch• P-chRev.1.01/ 9

Complementary MOSFET
ELM52527CWA-N

http://www.elm-tech.com■Electrical Characteristics (N-ch)ParameterSymbol

Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=16V, Vgs=0V

20

V

Ta=85°C

110μA

±10
1.0μA
V

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=250μA

0.4

On state drain current

Id(on) Vgs=4.5V, Vds≥5V

15

Static drain-source on-resistanceVgs=4.5V, Id=5.0A
Rds(on) Vgs=2.5V, Id=4.6A

15181923

Vgs=1.8V, Id=4.2A
Vds=6V, Id=5.0A
Is=1.5A, Vgs=0V

27
280.8534

Forward transconductance
Diode forward voltage

Gfs
Vsd

Max.body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance

IsCissmΩ

1.20

SV

1.6

A

620

pF

180
100pF
pF

Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CossCrss

Gate-source charge
Gate-drain charge

Qgs
Qgd

Vgs=4.5V, Vds=6V, Id≡5.0A

0.80.8Turn-on delay timeTurn-on rise timeTurn-off delay timetd(on)
tr
Vgs=4.5V, Vds=10V, Id≡3.6A

10102020

nsnstd(off) RL=5.5Ω, Rgen=6Ωtf

25
1040
20

nsns

Turn-off fall time

Vgs=0V, Vds=6V, f=1MHz

AQg

6.0

12.0

nC
nCnC

Rev.1.0
2/ 9

AFC2527W

Alfa-MOS

20V N & P Pair

Complementary MOSFET
Technology
Enhancement Mode MOSFET
ELM52527CWA-N■Typical Electrical and Thermal Characteristics (N-ch)

http://www.elm-tech.com

Typical Characteristics ( N-Channel )www.alfa-mos.com©Alfa-MOS Technology Corp.
Rev.B Jan. 2018Page 5

Rev.1.0
3/ 9

AFC2527W

Alfa-MOS

20V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM52527CWA-N
Typical Characteristics ( N-Channel )http://www.elm-tech.com

www.alfa-mos.com©Alfa-MOS Technology Corp.
Rev.B Jan. 2018

Page
6
Rev.1.0

4/ 9

AFC2527W

Alfa-MOS

20V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM52527CWA-N
Typical■Test
Characteristics( N-Channel
circuit and waveform(N-ch))

http://www.elm-tech.com

www.alfa-mos.com©Alfa-MOS Technology Corp.
Rev.B Jan. 2018

Page 7
Rev.1.0

5/ 9Complementary MOSFET
ELM52527CWA-N

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-16V, Vgs=0V-20

V

Ta=85°C-1-10μA±10-1.0μA
V

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=-250μA-0.4

On state drain current

Id(on) Vgs=-4.5V, Vds≥-5V-10

Static drain-source on-resistanceVgs=-4.5V, Id=-4.5A
Rds(on) Vgs=-2.5V, Id=-3.4A

37464252

Vgs=-1.8V, Id=-2.4A
Vds=-6V, Id=-4.6A
Is=-1.25A, Vgs=0V

59
12-0.8568

Forward transconductance
Diode forward voltage

Gfs
Vsd

Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance

IsCiss

Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CossCrss

Gate-source charge
Gate-drain charge

Qgs
Qgd

Turn-on delay timetd(on)Vgs=-4.5V, Vds=-10V
trId≡-3.7A, RL=2.7Ω
td(off)Rgen=1Ωtf

Turn-on rise timeTurn-off delay timeTurn-off fall time

Qg

Vgs=0V, Vds=-6V, f=1MHz

Vgs=-4.5V, Vds=-6V
Id≡-5.6A

AmΩ

-1.20

SV-1.6

A

1450

pF

265
255

pF
pF

10.0

18.0

2.5
2.8

nCnC
nC

15
25

2540nsns

40
156525nsns

Rev.1.0
6/ 9

AFC2527W

Alfa-MOS

20V N & P PairTechnology
Enhancement Mode MOSFET
Complementary MOSFET
ELM52527CWA-N■TypicalElectrical andThermal Characteristics(P-ch)
TypicalCharacteristics( P-Channel)

http://www.elm-tech.com

www.alfa-mos.com©Alfa-MOS Technology Corp.
Rev.B Jan. 2018

Page 8

Rev.1.0
7/ 9

AFC2527W

Alfa-MOS

20V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM52527CWA-N
Typical Characteristics ( P-Channel )http://www.elm-tech.com

www.alfa-mos.com©Alfa-MOS Technology Corp.
Rev.B Jan. 2018

Page 9Rev.1.0

8/ 9

AFC2527W

Alfa-MOS

20V N & P Pair

Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM52527CWA-N
TypicalCharacteristics( P-Channel■Test circuit
and waveform(P-ch) )http://www.elm-tech.com

www.alfa-mos.com©Alfa-MOS Technology Corp.
Rev.B Jan. 2018

Page 10

Rev.1.0
9/ 9