RGT30NS65D
Data Sheet

650V 15A Field Stop Trench IGBT
lOutline

VCES

650V

IC(100°C)

15A

VCE(sat) (Typ.)

1.65VPD

133W

lFeatures

LPDS / TO-262
(2)

(1)
(3)
(1)(2)(3)lInner Circuit

1) Low Collector - Emitter Saturation Voltage(2)(1) Gate(2) Collector(3) Emitter

2) Low Switching Loss
*13) Short Circuit Withstand Time 5μs(1)4) Built in Very Fast & Soft Recovery FRD*1 Built in FRD(3)(RFN - Series)5) Pb - free Lead Plating ; RoHS Compliant

lPackaging Specifications

lApplications

Packaging

General InverterReel Size (mm)330 / -Tape Width (mm)24 / -UPS

Taping / TubeTypePower Conditioner

Basic Ordering Unit (pcs) 1,000 / 1,000Welder

Packing code

TL / C9Marking

RGT30NS65DlAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)Parameter

SymbolValue

UnitCollector - Emitter Voltage

VCES

650

V

Gate - Emitter Voltage

VGES

30

V

TC = 25°C

IC30A

TC = 100°C

IC15A

ICP*145

A

TC = 25°C

IF26A

TC = 100°C

IF15A

IFP*145A

TC = 25°C

PD133W

TC = 100°C

PD66W

Operating Junction Temperature

Tj-40 to +175°C

Storage Temperature

Tstg-55 to +175°CCollector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation*1 Pulse width limited by Tjmax.
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2015.11 - Rev.C

Data Sheet

RGT30NS65D
lThermal Resistance
ValuesParameter

Symbol

Unit
Min.

Typ.

Max.

Thermal Resistance IGBT Junction - CaseRθ(j-c)--

1.12°C/W

Thermal Resistance Diode Junction - CaseRθ(j-c)--

2.86°C/W

lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
ValuesParameter

SymbolConditions

Unit
Min.

Typ.

Max.

Collector - Emitter Breakdown
Voltage

BVCES

IC = 10μA, VGE = 0V

650--V

Collector Cut - off Current

ICES

VCE = 650V, VGE = 0V--10μA

Gate - Emitter Leakage Current

IGES

VGE = 30V, VCE = 0V--

200nA

Gate - Emitter Threshold
Voltage

VGE(th)VCE = 5V, IC = 10.0mA

5.0

6.0

7.0

V

Tj = 25°C

-1.65

2.1V

Tj = 175°C-2.15-IC = 15A, VGE = 15V
Collector - Emitter Saturation
Voltagewww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

VCE(sat)2/11

2015.11 - Rev.C

Data Sheet

RGT30NS65DlIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
ValuesParameter

SymbolConditions

Unit
Min.

Typ.

Max.

Input CapacitanceCies

VCE = 30V

-780-

Output CapacitanceCoes

VGE = 0V-

35-

Reverse Transfer CapacitanceCres

f = 1MHz-13-

Total Gate Charge

Qg

VCE = 300V

-32-

Gate - Emitter Charge

Qge

IC = 15A-8-

Gate - Collector Charge

Qgc

VGE = 15V

-11-Turn - on Delay Timetd(on)IC = 15A, VCC = 400V-

18-

Rise Timetr

VGE = 15V, RG = 10Ω-20-Turn - off Delay Timetd(off)Tj = 25°C-

64-

Fall Timetf

Inductive Load-

75-

Turn - on Delay Timetd(on)IC = 15A, VCC = 400V-

18-

Rise Timetr

VGE = 15V, RG = 10Ω-22-Turn - off Delay Timetd(off)Tj = 175°C-

74-

Fall Timetf

Inductive Load-130-

pF

nC

nsns

IC = 45A, VCC = 520V
Reverse Bias Safe Operating AreaRBSOA VP = 650V, VGE = 15V

FULL SQUARE-RG = 50Ω, Tj = 175°C
VCC ≦ 360V
Short Circuit Withstand Timetsc

VGE = 15V

5--μs

Tj = 25°C

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2015.11 - Rev.C

Data Sheet

RGT30NS65DlFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
ValuesParameter

SymbolConditions

Unit
Min.

Typ.

Max.

Tj = 25°C

-

1.5

1.95

Tj = 175°C

-

1.3-

-55-

ns-

6.0-

A-

0.19-

μC-

141-

ns-

9.5-

A-

0.79-

μC

IF = 15ADiode Forward Voltage

Diode Reverse Recovery TimeVFtrr

Diode Peak Reverse Recovery
CurrentIrr

Diode Reverse Recovery
ChargeQrr

Diode Reverse Recovery Timetrr

Diode Peak Reverse Recovery
CurrentIrr

Diode Reverse Recovery
ChargeQrr

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V

IF = 15A
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C

IF = 15A
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C

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Data Sheet

RGT30NS65D
lElectrical Characteristic Curves

Fig.1 Power Dissipation vs. Case Temperature

Fig.2 Collector Current vs. Case Temperature

16040Collector Current : IC [A]Power Dissipation : PD [W]140120100806040302010Tj≦175ºC
VGE≧15V

2000025507510012515001755075100125150

175

Case Temperature : Tc [ºC]

Case Temperature : Tc [ºC]Fig.3 Forward Bias Safe Operating Area

Fig.4 Reverse Bias Safe Operating Area
6010005010µs100

Collector Current : IC [A]

Collector Current : IC [A]

2510100µs
10.140302010

TC= 25ºCSingle Pulse

Tj≦175ºC
VGE=15V00.01
11010001000

Collector To Emitter Voltage : VCE[V]www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

200

400

600

800

Collector To Emitter Voltage : VCE[V]5/11

2015.11 - Rev.C

Data Sheet

RGT30NS65D
lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

4545
Tj= 25ºC40

Tj= 175ºC

40

VGE= 20V

35

VGE= 12V

VGE= 15V

30

Collector Current : IC [A]

Collector Current : IC [A]VGE= 20V

25

VGE= 10V

20
15
10

35

VGE= 15V

30
VGE= 12V
25
VGE= 10V

20
15

VGE= 8V

10VGE= 8V
55000123405Collector To Emitter Voltage : VCE[V]Fig.7 Typical Transfer Characteristics

2345Collector To Emitter Voltage : VCE[V]Fig.8 Typical Collector To Emitter Saturation Voltagevs. Junction Temperature

304Collector To Emitter Saturation Voltage: VCE(sat) [V]VCE= 10V
25Collector Current : IC [A]12015
10Tj= 175ºC

5Tj= 25ºC
0024681012IC= 30A
3IC= 15A
2IC= 8A

1025Gate To Emitter Voltage : VGE [V]www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

VGE= 15V5075100125150175Junction Temperature : Tj [ºC]6/11

2015.11 - Rev.C

Data Sheet

RGT30NS65DlElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage

Collector To Emitter Saturation Voltage: VCE(sat) [V]Collector To Emitter Saturation Voltage: VCE(sat) [V]20
Tj= 25ºC
IC= 30A

15IC= 15A

10Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage

IC= 8A
505101520
Tj= 175ºC

15IC= 30A
10IC= 15A
IC= 8A

5052010Gate To Emitter Voltage : VGE [V]

15Gate To Emitter Voltage : VGE [V]Fig.12 Typical Switching Timevs. Gate ResistanceFig.11 Typical Switching Timevs. Collector Current
10001000
VCC=400V, IC=15A
VGE=15V, Tj=175ºC
Inductive ｌoad

Switching Time [ns]VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad

Switching Time [ns]20tf
100td(off)tf100td(off)trtrtd(on)10td(on)100102030400Collector Current : IC [A]www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

1020304050Gate Resistance : RG [Ω]7/11

2015.11 - Rev.C

Data SheetRGT30NS65D

Fig.13 Typical Switching Energy Losses
vs. Collector Current

Fig.14 Typical Switching Energy Losses
vs. Gate Resistance

1010Switching Energy Losses [mJ]

Switching Energy Losses [mJ]lElectrical Characteristic Curves

1

Eoff0.1

Eon
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad

1
Eoff

Eon

0.1

VCC=400V, IC=15A
VGE=15V, Tj=175ºC
Inductive ｌoad
0.01

0.01
0102030040Collector Current : IC [A]

2030

10000

15Cies100Coes
10Cres10.01

Gate To Emitter Voltage : VGE [V]Fig.16 Typical Gate Chargef=1MHz
VGE=0V
Tj=25ºC

4050

Gate Resistance : RG [Ω]Fig.15 Typical Capacitancevs. Collector To Emitter Voltage

1000

Capacitance [pF]10105
VCC=300V
IC=15A
Tj=25ºC
00.1

1100100

Collector To Emitter Voltage : VCE[V]www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

10203040

Gate Charge : Qg [nC]8/11

2015.11 - Rev.C

Data Sheet

RGT30NS65DlElectrical Characteristic Curves

Fig.17 Typical Diode Forward Current
vs. Forward Voltage

Fig.18 Typical Diode Reverse Recovery Timevs. Forward Current

45400Reverse Recovery Time : trr [ns]Forward Current : IF [A]403530252015
Tj= 175ºC10

Tj= 25ºC

50

VCC=400V
diF/dt=200A/µs
Inductive ｌoad
300200

Tj= 175ºC100

Tj= 25ºC

000.5

11.5

22.5

30

Forward Voltage : VF[V]20304050

Forward Current : IF [A]Fig.19 Typical Diode Reverse Recovery Current
vs. Forward Current

Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current

202.5

Reverse Recovery Charge : Qrr [µC]

Reverse Recovery Current : Irr [A]1015

Tj= 175ºC

105
VCC=400V
diF/dt=200A/µs
Inductive ｌoad

Tj= 25ºC
0VCC=400V
diF/dt=200A/µs
Inductive ｌoad

21.5

Tj= 175ºC

10.5
Tj= 25ºC
0010

2030

40050

Forward Current : IF [A]www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

1020304050

Forward Current : IF [A]

9/11

2015.11 - Rev.C

Data Sheet

RGT30NS65D
lElectrical Characteristic Curves

Fig.21 IGBT Transient Thermal ImpedanceTransient Thermal Impedance: ZthJC [ºC/W]

10
D= 0.5
0.1

0.2

1

PDM

0.1
0.05

0.02

0.01

Single Pulse

t1t2
Duty=t1/t2Peak Tj=PDM×ZthJC+TC

0.01
0.0001

0.001

0.01

0.1

1

Pulse Width : t1[s]Fig.22 Diode Transient Thermal Impedance
10Transient Thermal Impedance: ZthJC [ºC/W]

D= 0.50.2
0.1
1Single Pulse
0.1
0.05 0.02

PDM

0.01
t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC

0.01
0.0001

0.001

0.01

0.1

1

Pulse Width : t1[s]www.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

10/11

2015.11 - Rev.C

Data Sheet

RGT30NS65D
lInductive Load Switching Circuit and Waveform

Gate Drive Time90%
D.U.T.
D.U.T.

VGE

10%

VG

90%

IC

10%

Fig.23 Inductive Load Circuit
td(on)

trtonIFtd(off)tf

toff

trr , Qrr

VCE
diF/dtVCE(sat)

Irr

Fig.25 Diode Reverce Recovery Waveform

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Fig.24 Inductive Load Waveform

11/11

2015.11 - Rev.C

NoticeNotes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safetymeasures such as complying with the derating characteristics, implementing redundant andfire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have noresponsibility for any damages arising out of the use of our Poducts beyond the rating specified byROHM.
4) Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any otherparties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use ofsuch technical information.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of suchinformation.
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non-compliance with any applicable laws or regulations.
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R1102A