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6 ࠾ࡼࡧ 6 ⾲㠃≧ែࡣࠊࡑࡢࢫࣆࣥ࠾ࡼࡧ㌶㐨ゅ㐠ື㔞࡟㉳ᅉࡍࡿࡶࡢࡢࡳ࡛ࡣ࡞ࡃࠊࣂࣝ
ࢡ⤖ᬗࡢᑐ⛠ᛶࡶ཯ᫎࡋࡓ≉᭷ࡢ㸰Ⰽᛶࢆ♧ࡍࡇ࡜ࡀぢฟࡉࢀࡓࠋࡲࡓࠊ6 ࠾ࡼࡧ 6 ≧ែ࡟࠾࠸࡚ࡣࠊᗄఱᏛ㓄⨨࡜㟁Ꮚ≧ែࡢ㸰ḟඖᛶ࡟ᇶ࡙࠸࡚グ㏙ࡉࢀࡿ࡜⪃࠼ࡽࢀࡿTx ᪉ྥ࡟࠾࠸࡚⠇ࢆ♧ࡍ㸰Ⰽᛶࡀほࡉࢀࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋSAAUNIVERSI

ビスマス超薄膜の角度分解光電子マッピングにおける円２色性TYG

高橋和敏, 今村真幸, 山本勇, 東純平
佐賀大学シンクロトロン光応用研究センター⁅⁓⁙⁓‒⁇⁠⁛⁨⁗⁤⁥⁛⁦⁫‒‴⁗⁓ ⁞⁛⁠⁗‒‚⁅″‹″‟‾⁅„‒‴‾‣‥‛
Wavelength (nm)150

Major Apparatuses

100

Photoemission Intensity (a.u.)

0.4

2011Febpoly Au
500 Pm

G2M34
100 Pmwith LiFt0.5

G1M33
100 Pmwith LiFt0.5

0.3

0.2

0.1

BL13 PGM
Au 36K
8.0 eV (G2M34)
May 2015'Etotal22±1 meV

3.70

0.0
678910 11
Photon Energy (eV)12⁆⁛‬⁅⁓⁢⁢⁚⁛⁗⁤‾⁓⁥⁗⁤‒⁅⁫⁥⁦⁗⁂⁚⁡⁦⁡⁗⁞⁗⁕⁦⁤⁡⁠⁅⁢⁗⁕⁦⁤⁡ ⁗⁦⁗⁤‒

3.90

‾⁓⁥⁗⁤

10

Number of periods:
24
Period:86 mm
Total length:2122.5 mm
Total weight:
3.85 tMagnet size:
21.5t䤸20h䤸80w
Remnant Field:
1.34T
Deflection parameter K: 3.86 - 0.05
(gap 35 - 150 mm, hQ1st 26 - 216 eV)

Gap 40-100 mm
2 x 0.2 mrad
S1=S2=20Pm

M23G2111st10M22G110109108107

M21G13rdGap 65mm

0Photoemission Intensity (arb. unit)⁈⁓⁤⁛⁗⁖‒‾⁛⁠⁗‒⁅⁢⁓⁕⁛⁠⁙⁂⁞⁓⁠⁗‒‹⁤⁓⁦⁛⁠⁙‒‿⁡⁠⁡⁕⁚⁤⁡ ⁓⁦⁡⁤

Parameters of the planer undulator

5th3rd200
400
600
Photon Energy (eV)

800

54

Au 10 K
60 eV
S1=S2=30Pm

TGHQEWUKPIOKTTQTU

RJQVQGNGEVTQP
CPCN[\GT2TGRGTCVKQP
EJCODGT#PCN[UKU
EJCODGTNQCFNQEM'Etotal
8.0 meV
56.0856.10 56.12 56.14
Kinetic Energy (eV)80-15100-10-505Tx [deg]10e-100

zer sliAnaly

Bi(111)/Si(111)-7x7hQ=21eV, EPass=10eV,
Tx = ±15Û, Ty = ±10Û (0.2Û step)-10-505Tx [deg]Epass 20eV, KE = 20eV, Slit 0.2mm
L4Ang1d6(±7°)
L4Ang0d8(±15°)-10

Ty [DefX]

Ty [DefX]

Ty [DefX]-520200 300
Tx [slice#]

0400

Wave Length (nm)
160
150

170

100200 300
Tx [slice#]-4400

100200 300
Tx [slice#]

1305550-50-5-10-10-15-15-15

7.0

7.5

8.0
8.5
Photon Energy (eV)

109.0

0

1000200 300
Tx [slice#]

100200 300
Tx [slice#]-504000100200 300
Tx [slice#]-10400-10-505Tx (deg)

0.6

0.8

Ty (deg)

X1

Γ

-10

-10

-505
Tx (deg)

1.0

1.5

0.8
0.6

0.2

1.0

50

0.5k// (Å-1)

0-0.5

-1.0

00

0.2

0.2

0.1

Binding Energy (eV)

00.4
0.6
0.8

0-0.1

0.4

50Ty (deg)

100Tx (deg)1020

0.150.2020ALCP-RCPB

10C䢳䢰䢲5䢲䢰䢷0䢲䢯䢲䢰䢷-5-30-20-100Tx (deg)10-10

20-20-100Tx (deg)1020

Tx = -9°

Tx = -7°

Tx = -2°

Tx = 0°Tx = 2°

Tx = 7°

Tx = 9°0510 -10 -50

510 -10 -50

5

10 -10 -50
5Ty (deg)

10 -10 -50

5

10 -10 -5

05

10 -10 -50

5100.20-10 -50

510 -10 -50

5

10 -10 -5

0510 -10 -50
5Ty (deg)

10 -10 -50

510 -10 -50

5

10 -10 -50510-0.05-20-15 -10Tx (deg)-10 -5 0 5
Ty (deg)

Tx = -13°

Tx = -12°

Tx = -11°

Tx = -10°

Tx = -8°

0.15
0.20

-5-505-50

5-50

5-50
Ty (deg)

5-50

5-50

5-50

5-20-15 -10Tx (deg)-505-50

5-50

5-50
Ty (deg)

5-50

5-50

5-50

50
0.05
0.10
0.15
0.20

-50.8
1.0

10Tx = -14°

0.10

1.21BLBi(110)-10 -5 0 5
Ty (deg)

C(I = 0°)105-0.05
Binding Energy (eV)1BLBi(110)Tx = -16°

00.05

-0.05

-25

0.6

Ty (deg)

1.2-400.15

Tx = 8, 10, 11, 12, 13, 14, 16°

1.0

10

00-5-0.2

0-10-10 -5 0 5Tx (deg)-10Tx (deg)

0.10

Binding Energy (eV)

5B(I = 180°)
Ty (deg)

0.2

Binding Energy (eV)Ty (deg)

IL - IRIL - IR (arb. unit)

Ty (deg)

IL + IR

EF-5-20

0.05

-5-25

5-30

0.15

1000.25eV-40

00.20-10 -5Tx = -16, -14, -13, -12, -11, -10, -8°

B(I = 0°)1.02.0Is = 4.21 eV

10-10

0.10

0.5

0.4

10-20

00.10

Binding Energy (eV)*X2-0.2-10 -5 0 5Tx (deg)

20-0.05

0Ty (deg)

0-10

0.2

0101BL

Intensity (arb. unit)

Binding Energy (eV)ky (Å-1)

01BL
Ef-5

100.05

10-5

X1

0.4

100Tx (deg)

-0.05

50.2
0.4
kx (Å-1)-100.0559.55ᵡᵢᵋᵟᵰᵮᵣᵱᴾᶋᵿᶎᶎᶇᶌᶅᴾᶍᶄᴾᶑᶓᶐᶄᵿᶁᶃᴾᶑᶒᵿᶒᶃᶑᴾᶍᶌᴾᵏᵠᵪᴾᵠᶇᵆᵏᵏᵎᵇᴾᶄᶇᶊᶋᴾ
ᶍᶌᴾᶒᶐᶇᶊᵿᶗᶃᶐᴾᶅᶐᵿᶎᶆᶃᶌᶃᵍᵱᶇᵡᵆᵎᵎᵎᵏᵇ

0-20Tx = -9, -7, -2, 0, 2, 7, 9°

10A(I = 0°)

A(I = 180°)-0.2

0.40.15

Kogakugiken Corp.

0-10-15-0.40.10

MgF2 QWP

60

-5-10

0.2

0.6

0.20

Binding Energy (eV)

51
*X

0.8

70

Ty (deg)

10Ty [DefX]

10
Ty [DefX]

10
Ty [DefX]

10
Ty [DefX]

15400

140

Binding Energy (eV)KE = 4.9-5.0 eV

KE = 3.9-4.0 eV
15200 300
Tx [slice#]-1020

1.040015100

100-100

KE = 1.9-2.0 eV

KE = 1.4-1.5 eV000

Epass 5eV, L4Ang0d8(±15°), Slit 0.2mm

0-10Tx (deg)-515-5-20

䢯䢳䢰䢲-15100-300.05-2-50t

Phase difference of the MgF2 QWP.

0-40

䣋䣎䢢䢯䢢䣋䣔䢢䢪䣣䢰䣷䢰䢫0-1080

50

55L4Ang3d9(±3.5°)

4151018090

10Phase Difference (deg.)

00-5Tx6020*

EF ± 0.005eV

Ty

T40

S3M

5S2S1

I = 180°

10Ti = 68°
S2Intensity (arb. unit)

Kinetic Energy (eV)

Epass 20eV
L4Ang0d8(±15°)
Slit 0.2mm

800I = 0°

Ti = 55°
Ti = 42°Ti = 32°-58.0eV

Ti

LCP+RCP

Binding Energy (eV)4060
Kinetic Energy (eV)CP O/4 HP

xIon sputtering gun
ULVAC-Phai,e-beam Evaporator
Omicron, EFM-3
LEED Instrument
OmicronCharacterization and PES measurement
LEED measurements
angle-resolved photoemission (hQ = 21eV, 8.5eV @40K)

56.16

Ty (deg)20

5Ty (deg)-5-10
010Bi(111)/Si(111)0-5-10-15

yI

Binding Energy (eV)0KE = 40 eV

6TCPUHGTTQF'NGEVTQPDGCO
GXCRQNCVQT

Sample Preparation
Substraten-Si(111) (Sb-doped, < 0.02 :.cm)
5mm x 20mm x 0.34mm→ Flash cleaning in UHV
Tanneal Û&IRUVHFWLPHV→ deposition of Bi and annealing
Tsubst = 50Û&
4 ~ 24 BL ( ~ 0.20 BL/min)(1BL = 11.5 atoms/nm2)
Tanneal = 120Û&IRUPLQ→ Bi(111) ﬁlms⁂⁚⁡⁦⁡⁗⁞⁗⁕⁦⁤⁡⁠⁅⁢⁗⁕⁦⁤⁡ ⁗⁦⁗⁤‒

Measured photon flux and energy resolution at VLS station[1] J. Phys. Conf. Ser. 425, 072007 (2013).

Ty (deg)5

Ty [deg]Ty [deg]

10:TC[VWDG

⁅⁄RFM

S2

S1

ᵡᵢᵋᵟᵰᵮᵣᵱᴾᶋᵿᶎᶎᶇᶌᶅᴾᶍᶄᴾᶑᶓᶐᶄᵿᶁᶃᴾᶑᶒᵿᶒᶃᶑᴾᶍᶌᴾᵠᶇᵆᵏᵏᵏᵇᴾᶄᶇᶊᶋᴾᶍᶌᴾᵱᶇᵆᵏᵏᵏᵇᵋᵕᶖᵕᴾ

52TGRCTCVKQP
EJCODGT.CUGTG
M2M1M0⁄⁗⁥⁧⁞⁦⁥‒⁓⁠⁖‒‶⁛⁥⁕⁧⁥⁥⁛⁡⁠

10#PCN[UKU
EJCODGT.''&
#WIGT

A-1 and Lens-4 (MB Scientific AB) for E(kx, ky) mapping
15+QPIWP
54 G8⁅⁄⁓⁦⁡⁤‿⁡⁠⁡⁕⁚⁤⁡⁂⁚⁡⁦⁡⁗⁞⁗⁕⁦⁤⁡⁠‒⁅⁢⁗⁕⁦⁤⁡ ⁗⁦⁗⁤15.QCFNQEM
EJCODGT*KIJKPVGPUKV[*G.COR

3.75
3.80
3.85
Kinetic Energy (eV)Measured photon flux and energy⁛⁠⁙
resolution at PGM station⁂⁞⁓⁠⁗‒‹⁤⁓⁦⁂⁞⁓⁠⁗⁤‟⁦⁫⁢⁗⁇⁠⁖⁧⁞⁓⁦⁡⁤

Photoelectron Spectrometer
MB Scientific, A-1
Ti：Sapphire Laser Systems
Coherent, Reg-A9000
Coherent, Chameleon
Closed-cycle He refrigerator
Iwatani, cryo-mini

6TCPUHGTTQF'NGEVTQPGPGTI[CPCN[\GT‾⁓⁥⁗⁤

2000.5Flux (phs/sec/100mA)

Two-dimensional mapping on angle-resolved photoemission
spectroscopy (ARPES) provides a rich variety of information
concerning the electronic and atomic structure of solids andsurfaces. Recently, circular dichroism (CD) in ARPES has beenfound to be sensitive to the orbital and spin angular momenta ofthe electronic states, and would be a powerful probe for thenontrivial surface states of topological insulator, or Rashba split
surface state.
We have demonstrated the two-dimensional CD-ARPES
mapping on Rashba-split surface state on Bi(111) film grown onSi(111) substrate. Circular polarization at the photon energy region
between 8 and 9 eV has been achieved using a MgF2 O/4 wave
plate at the PGM station of BL13 at Saga Light Source.
Strong CD in ARPES mapping of surface states on Bi(111) has
been observed for whole surface Brillouin zone and seementangled with spin and local angular momentum, as well as
experimental geometry and the two-dimensional character ofsurface state.

Normalized Yield (nA/300 mA)″⁔⁥⁦⁤⁓⁕⁦0-55Tx = 10°

Tx = 11°

Tx = 12°Tx = 13°

Tx = 14°

Tx = 16°0.100.15
0.20

25-505-505-505-50Ty (deg)5-505-505-505-505-50

5-505-50Ty (deg)5-505-505-505-0.05
Binding Energy (eV)This work was supported by JSPS KAKENHI Grant Numbers
JP26286008, JP16K13726 and the Partnership Project for
Fundamental Technology Researches of the Ministry of Education,Culture, Sports, Science and Technology of Japan.

1520Tx (deg)5C(I = 180°)
Ty (deg)″⁕⁝⁠⁡⁩⁞⁗⁖⁙⁗ ⁗⁠⁦⁥

10

Tx = 8°00.05

0-55101520Tx (deg)

2500.05
0.10
0.15
0.20