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【 演題 】 III-V Nanostructures for Optoelectronic Device and Energy Applications【 講師 】 Hoe TanProfessor, ARC Centre of Excellence for Transformative Meta-Optical Systems
Department of Electronic Materials Engineering, Research School of Physics TheAustralian National University【 日時 】 7 月 19 日（水）15:00 〜 16:00【 講演開催場所 】 北海道大学量子集積エレクトロニクス研究センター 304
セミナー室【 主催 】 応用物理学会北海道支部【 講演の要旨 】
Group III-V semiconductors have revolutionised electronics andoptoelectronics due to their superior physical and optoelectronic properties including
high carrier mobility, direct bandgap and band structure engineering capability.
Reducing the device size to nanoscale brings many unique properties, such as large
surface-area-to-volume ratio, high aspect ratio, carriers and photons confinement effect.
In this talk I will present our III-V research activities at The Australian National
University, focusing on (i) nanowires, (ii) shape engineering, (iii) hexagonal boron
nitride and (iv) thin film technology.
(i)Nanowires are usually grown by the so-called vapour-liquid-solid growthmechanism or the selective area growth techniques. Device applications of thesenanowires such as lasers, solar cells and photoelectrodes for hydrogen production will
be presented.
(ii)
Our work on selective area growth of III-V nanostructures shows the possibilityof obtaining other functional nanostructures beyond the limitation of rod-like nanowires
and opening the way to more advanced device geometries, such as nanomembranes andmicro-rings. Our micro-ring lasers have excellent cavity due to the atomically flat facets
and operate in the whispering gallery mode. They are important components for
integrated photonics applications as light from can these devices can be efficiently
coupled to on-chip waveguides.
(iii)
Hexagonal boron nitride (hBN) is a two-dimensional, wide-bandgap
semiconductor which is well-known for its thermal and chemical stability, passivation
properties and, more recently, as single photon emitters which has applications inquantum computing and cryptography. However, hBN is currently limited to 1-2 mm insize, which is impractical in real applications. I will introduce our work on growing
wafer-scale hBN for applications as single photon sources and templates for van derWaals epitaxy.
(iv)
Thin film technology based on epitaxial lift-off and spalling techniques are
attractive to reduce the cost of III-V devices and to make flexible devices. Our research
focus on multilayer epitaxial lift-off and the integration with earth abundant catalysts forgreen hydrogen generation.
Bio:
Prof. Tan received his B.E. (Hons) in Electrical Engineering from the University of
Melbourne in 1992 and PhD in Materials Engineering from the Australian National
University in 1997. He has co-authored over 570 journal papers and 9 book chapters,with over 21,000 citations and a h-index of 70. He is also a co-inventor in 6 US and 2
Australian patents related to laser diodes, infrared photodetectors, photonic devices andcatalysis. Prof. Tan is a Fellow of the IEEE “for contributions to compound
semiconductor optoelectronic materials and devices”. He was also the DistinguishedLecturer for IEEE Nanotechnology Council (2016 &amp; 2017) and IEEE Photonics
Society (2016-2017). He was named “Australia’s leading researcher in nanotechnology”
by The Australian’s research magazine in 2020. Prof. Tan is the director of the $30M
Australian National Fabrication Facility - ACT Node, which provides micro/nanofabrication facilities for the R&amp;
D communities. He is currently the Associate Director for Infrastructure at the Research
School of Physics, ANU.
【 世話人 】 冨岡克広
北海道大学大学院情報科学研究院および量子集積エレクトロニクス研究センター tel:011-706-6132, e-mail: tomioka@rciqe.hokudai.ac.jp