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PDTD123E series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 — 16 November 2009

Product data sheet

1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1.

Product overview

Type number

Package

PNP complement

NXP

JEITA

JEDEC

PDTD123EKSOT346SC-59A

TO-236

PDTB123EKPDTD123ES[1]SOT54

SC-43A

TO-92

PDTB123ES

PDTD123ET

SOT23-TO-236AB

PDTB123ET[1]

Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features
 Built-in bias resistors
 Simplifies circuit design
 500 mA output current capability

 Reduces component count Reduces pick and place costs
 ±10 % resistor ratio tolerance

1.3 Applications
 Digital application in automotive andindustrial segments
 Controlling IC inputs

 Cost saving alternative for BC817 series
in digital applications
 Switching loads

1.4 Quick reference data
Table 2.

Quick reference data

SymbolParameterConditions

MinTypMaxUnitVCEO

collector-emitter voltage

open base

--50V

IO

output current (DC)--500mA

R1

bias resistor 1 (input)

1.54

2.2

2.86kΩ

R2/R1

bias resistor ratio

0.9

1.0

1.1

PDTD123E series

NXP Semiconductors

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

2. Pinning information
Table 3.
PinPinning
Description

Simplified outline

SymbolSOT54
1input (base)2

output (collector)

32
R1GND (emitter)

123

1R2001aab347

3006aaa145

SOT54A1

input (base)2output (collector)

32
R1

GND (emitter)

1
21R2

3001aab348

3006aaa145

SOT54 variant
1input (base)2output (collector)

3

2
R1

GND (emitter)

1
23

1R2001aab447

3006aaa145

SOT23, SOT346
1input (base)

2GND (emitter)33

3
R1output (collector)

1
R2

1

2006aaa144

PDTD123E_SER_2

Product data sheet

2sym007© NXP B.V. 2009. All rights reserved.

Rev. 02 — 16 November 2009

2 of 10

PDTD123E series

NXP Semiconductors

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

3. Ordering information
Table 4.

Ordering information

Type number

Package
NameDescription

VersionPDTD123EK

SC-59A

plastic surface mounted package; 3 leads

SOT346

PDTD123ES[1]SC-43A

plastic single-ended leaded (through hole) package; SOT54
3 leads

PDTD123ET-

plastic surface mounted package; 3 leads

[1]

SOT23

Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking
Table 5.

Marking codes

Type number

Marking code[1]PDTD123EKE3

PDTD123ES

D123ESPDTD123ET

*7T

[1]

* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia* = W: made in China

5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

MinMaxUnit

VCBO

collector-base voltage

open emitter

-

50

VVCEO

collector-emitter voltage

open base

-50

V

VEBO

emitter-base voltage

open collector

-10V

VI

input voltage
positive-+12

V

negative-

−10V-

500

mA

output current (DC)IO

total power dissipation

Ptot

Tamb ≤ 25 °C

SOT346-250mW

SOT54-500mW

SOT23-250mW°C

Tstg

storage temperature−65+150Tj

junction temperature-150°C

Tambambient temperature−65+150°C[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.

PDTD123E_SER_2

Product data sheet[1]© NXP B.V. 2009. All rights reserved.

Rev. 02 — 16 November 2009

3 of 10

PDTD123E series

NXP Semiconductors

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

6. Thermal characteristics
Table 7.

Thermal characteristics

SymbolParameter

Rth(j-a)[1]

Conditions

Min

TypMaxUnit

SOT346--500

K/W

SOT54--250

K/W

SOT23--500

K/W

thermal resistance fromjunction to ambientin free air[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
SymbolParameter

ICBO

Conditions

Min

TypMaxUnit

collector-base cut-off VCB = 40 V; IE = 0 A
current
VCB = 50 V; IE = 0 A--100nA--100nAICEO

collector-emitter
cut-off current

VCE = 50 V; IB = 0 A--0.5μA

IEBO

emitter-base cut-offcurrent

VEB = 5 V; IC = 0 A--2mAhFE

DC current gain

VCE = 5 V; IC = 50 mA

40--

VCEsatcollector-emittersaturation voltage

IC = 50 mA; IB = 2.5 mA

--0.3

V

VI(off)off-state input
voltage

VCE = 5 V; IC = 100 μA

0.6

1.1

1.8

VVI(on)on-state input
voltage

VCE = 0.3 V; IC = 20 mA

1.0

1.52.0VR1bias resistor 1 (input)1.54

2.22.86kΩ

R2/R1

bias resistor ratio

0.9

1.0

1.1

Cc

collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 100 MHz-7-

PDTD123E_SER_2

Product data sheetpF© NXP B.V. 2009. All rights reserved.

Rev. 02 — 16 November 2009

4 of 10

PDTD123E series

NXP Semiconductors

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

006aaa318

103
hFE

(1)
(2)
(3)

102

006aaa319

10−1VCEsat
(V)

10(1)
(2)
(3)

1

10−1
10−111010210310−21102

10IC (mA)

IC (mA)

VCE = 5 V

IC/IB = 20

(1) Tamb = 100 °C(1) Tamb = 100 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = −40 °C(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collectorcurrent; typical values

Fig 2.

006aaa320

10Collector-emitter saturation voltage as afunction of collector current; typical values
006aaa321

10VI(off)(V)

VI(on)
(V)

(1)

(1)

(2)

1(2)

1(3)

(3)

10−1
10−1

110102103

10−110−1

VCE = 0.3 V

VCE = 5 V

(1) Tamb = −40 °C(1) Tamb = −40 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = 100 °C(3) Tamb = 100 °C

Fig 3.

On-state input voltage as a function ofcollector current; typical values

Fig 4.

10

Off-state input voltage as a function ofcollector current; typical values

PDTD123E_SER_2

Product data sheet

1IC (mA)

IC (mA)© NXP B.V. 2009. All rights reserved.

Rev. 02 — 16 November 2009

5 of 10

PDTD123E series

NXP Semiconductors

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

8. Package outline
1.3
1.0

3.1
2.7
30.45
0.38

4.2
3.6

0.6
0.2

0.48
0.40

3.0 1.7
2.5 1.3

12

4.8
4.4
1

1.27

2
0.50
0.35

1.9

0.26
0.10

Dimensions in mm

Fig 5.

2.54
3

5.2
5.004-11-11

Dimensions in mm

Package outline SOT346 (SC-59A/TO-236)

Fig 6.

04-11-16

Package outline SOT54 (SC-43A/TO-92)
0.45
0.38

0.45
0.38

4.2
3.6

14.5
12.7

4.2
3.6

1.27

0.48
0.40

3 max

12.5max0.48
0.40
12

4.8
4.4

5.08

24.8
4.4

2.54

2.54
3

1.27

3
5.2
5.0

5.2
5.0

14.5
12.7

Dimensions in mm

Fig 7.

04-06-28

14.5
12.7

Dimensions in mm

Package outline SOT54A

Fig 8.

05-01-10

Package outline SOT54 variant

3.0
2.8

1.1
0.9
3

0.45
0.15
2.5 1.4
2.1 1.2

12

1.9

0.48
0.38

Dimensions in mm

Fig 9.

0.15
0.09
04-11-04

Package outline SOT23 (TO-236AB)

PDTD123E_SER_2

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 02 — 16 November 2009

6 of 10

PDTD123E series

NXP Semiconductors

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number

Package

Description

3000

5000

10000

PDTD123EKSOT3464 mm pitch, 8 mm tape and reel

-115

--135

PDTD123ES

SOT54bulk, straight leads

--412

-

SOT54A

tape and reel, wide pitch---116

tape ammopack, wide pitch---126

SOT54 variantbulk, delta pinning

--112

-

SOT234 mm pitch, 8 mm tape and reel

-215--235

PDTD123ET[1]

For further information and the availability of packing methods, see Section 12.

PDTD123E_SER_2

Product data sheet

Packing quantity© NXP B.V. 2009. All rights reserved.

Rev. 02 — 16 November 2009

7 of 10

PDTD123E series

NXP Semiconductors

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

10. Revision history
Table 10.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PDTD123E_SER_2

20091116

Product data sheet-PDTD123E_SER_1Modifications:• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technicalcontent.

PDTD123E_SER_1

20050408

Product data sheet-

PDTD123E_SER_2

Product data sheet-© NXP B.V. 2009. All rights reserved.

Rev. 02 — 16 November 20098 of 10

PDTD123E series

NXP Semiconductors

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

11. Legal information
11.1

Data sheet status

Document status[1][2]Product status[3]Objective [short] data sheet

Development

This document contains data from the objective specification for product development.

Preliminary [short] data sheet

Qualification

This document contains data from the preliminary specification.

Product [short] data sheet

Production

This document contains the product specification.

Definition[1]

Please consult the most recently issued document before initiating or completing a design.

[2]

The term ‘short data sheet’ is explained in section “Definitions”.

[3]

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

11.2

Definitions

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences ofuse of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.

11.3

Disclaimers

General — Information in this document is believed to be accurate andreliable. However, NXP Semiconductors does not give any representations orwarranties, expressed or implied, as to the accuracy or completeness of suchinformation and shall have no liability for the consequences of use of suchinformation.
Right to make changes — NXP Semiconductors reserves the right to makechanges to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications andtherefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are soldsubject to the general terms and conditions of commercial sale, as publishedat http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted orconstrued as an offer to sell products that is open for acceptance or the grant,conveyance or implication of any license under any copyrights, patents orother industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from national authorities.
Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

11.4Trademarks

Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

PDTD123E_SER_2

Product data sheet© NXP B.V. 2009. All rights reserved.

Rev. 02 — 16 November 20099 of 10

PDTD123E series

NXP Semiconductors

NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

13. Contents
11.1
1.2
1.3
1.423456789101111.1
11.211.3
11.41213Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009.

All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 November 2009
Document identifier: PDTD123E_SER_2