PHPT61002NYCLH

100 V, 2 A NPN high power bipolar transistor
24 March 2023

Product data sheet

1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power
plastic package.
PNP complement: PHPT61002PYCLH

2. Features and benefits••••

High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation

3. Applications••••

Load switch
Power management
Linear mode voltage regulator
Backlighting apllications

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter
voltageopen base

-

-

100

V

IC

collector current

-

-

2

A

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

-

6

A

RCEsatcollector-emittersaturation resistance

IC = 2 A; IB = 200 mA; Tamb = 25 °C

-

80

150

mΩ

[1]

pulsed; tp ≤ 300 µs; δ ≤ 0.02

[1]

PHPT61002NYCLH

Nexperia

100 V, 2 A NPN high power bipolar transistor

5. Pinning information
Table 2. Pinning information
Pin
SymbolDescription
1E

emitter2E

emitter3E

emitter

4

B

base

mb

C

collector

Simplified outline

Graphic symbolmb
CB

1 2 3 4

LFPAK56; PowerSO8 (SOT669)

E
sym123

6. Ordering information
Table 3. Ordering information
Type number
Package
PHPT61002NYCLH

Name

Description

VersionLFPAK56;
Power-SO8

plastic, single-ended surface-mounted package; 4terminals

SOT6697. Marking
Table 4. Marking codes
Type number

Marking code

PHPT61002NYCLH

1002NCCPHPT61002NYCLH

Product data sheet

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100 V, 2 A NPN high power bipolar transistor

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

100

V

VCEO

collector-emitter voltage

open base

-

100

V

VEBO

emitter-base voltage

open collector

-

7

V

IC

collector current

-

2

A

ICM

peak collector current

-

6

A

IB

base current

-

0.5

A

Ptot

total power dissipation

[1]

-

1.25

W

[2]

-

3

W

[3]

-

5

W

[4]

-

25

W

single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C

Tj

junction temperature

-

175

°C

Tamb

ambient temperature

-55

175

°C

Tstg

storage temperature

-65

175

°C

[1]
[2]
[3]
[4]

Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint.
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated mounting pad for collector 6 cm .
Device mounted on an ceramic PCB; Al2O3; standard footprint.
Power dissipation from junction to mounting base.
aaa-010424

8
Ptot
(W)
6
(1)

4
(2)

2
(3)

0
-75

25

125

Tamb (°C)225(1) Ceramic PCB, Al2O3, standard footprint
2(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Fig. 1.

Power derating curves

PHPT61002NYCLH

Product data sheet

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100 V, 2 A NPN high power bipolar transistor

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter
Rth(j-a)thermal resistance from in free air
junction to ambient

Rth(j-sp)
[1]
[2]
[3]

Conditions

Min

Typ

Max

Unit

[1]

-

-

115

K/W

[2]

-

-

50

K/W

[3]

-

-

30

K/W

-

-

6

K/W

thermal resistance fromjunction to solder point

Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint.
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm .
Device mounted on an ceramic PCB, Al2O3, standard footprint.
aaa-010427

103
Zth(j-a)(K/W)

duty cycle = 1

102

0.75
0.33
0.2

10

0.5
0.1

0.05
0.02
0.01

1

0.25

0

10-1
10-5

10-4

10-3

10-2

10-1

1

10

102

tp (s)

103

FR4 PCB, standard footprint
Fig. 2.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-010428

102
duty cycle = 1

Zth(j-a)
(K/W)

0.75

10

0.33

0.5

0.2
0.1
0.05

1

0.01

10-1
10-5

0.02

0.25

0

10-4

10-3

10-2

FR4 PCB, mounting pad for collector 6 cm
Fig. 3.

10-1

1

2

10

102

tp (s)

103

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

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Nexperia

100 V, 2 A NPN high power bipolar transistor

10. Characteristics
Table 7. Characteristics
SymbolParameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off
current

VCB = 80 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

VCB = 80 V; IE = 0 A; Tj = 150 °C

-

-

50

µA

IEBO

emitter-base cut-off
current

VEB = 7 V; IC = 0 A; Tamb = 25 °C

-

-

100

nA

ICES

collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C
current

-

-

100

nA

hFE

DC current gain

VCE = 1.5 V; IC = 500 mA; Tamb = 25 °C [1]

100

180

-

VCE = 10 V; IC = 500 mA; Tamb = 25 °C

[1]

120

220

-

VCE = 5 V; IC = 1 A; Tamb = 25 °C

[1]

90

160

260

VCE = 10 V; IC = 1 A; Tamb = 25 °C

[1]

90

180

-

VCE = 10 V; IC = 2 A; Tamb = 25 °C

[1]

20

80

-

-

50

75

mV

IC = 0.5 A; IB = 50 mA; Tamb = 25 °C

VCEsatcollector-emittersaturation voltage

[1]

-

160

300

mV

RCEsatcollector-emittersaturation resistance

[1]

-

80

150

mΩ

VBEsatbase-emitter saturation IC = 1 A; IB = 50 mA; Tamb = 25 °C
voltage
IC = 2 A; IB = 200 mA; Tamb = 25 °C

[1]

-

0.92

1.05

V

[1]

-

1.08

1.2

V

VBEon

base-emitter turn-on
voltage

VCE = 2 V; IC = 0.1 A; Tamb = 25 °C

-

0.68

0.85

V

td

delay time

-

20

-

ns

tr

rise time

VCC = 12.5 V; IC = 1 A; IBon = 0.05 A;
IBoff = -0.05 A; Tamb = 25 °C

-

300

-

ns

ton

turn-on time

-

320

-

ns

ts

storage time

-

800

-

ns

tf

fall time

-

420

-

ns

toff

turn-off time

-

1220

-

ns

fT

transition frequency

VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C

-

140

-

MHz

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C

-

11

-

pF

[1]

IC = 2 A; IB = 200 mA; Tamb = 25 °C

pulsed; tp ≤ 300 µs; δ ≤ 0.02

PHPT61002NYCLH

Product data sheet

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Nexperia

100 V, 2 A NPN high power bipolar transistor
aaa-026555

500

aaa-026556

3

IB = 50 mA

hFE

45

IC
(A)

400

40
35

(1)

2
300

30

(2)

25

20

15
10

200
1

(3)

5

100

0
10-1

1

10

102

0

103
104
IC (mA)

VCE = 1 V
(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 4.

0

1

3

4

VCE (V)

5

Tamb = 25 °C
Fig. 5.

Collector current as a function of collectoremitter voltage; typical values

DC current gain as a function of collector
current; typical values
aaa-010808

8

aaa-010809

1.6

VBE
(V)

VBEsat
(V)
6

1.2

4

0.8
(1)

(1)

(2)

(2)

2

0.4

(3)

(3)

0
10-1

1

10

102

0
10-1

103
104
IC (mA)

VCE = 2 V
(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C
Fig. 6.

2

Product data sheet

10

102

103
104
IC (mA)

IC/IB = 20
(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Base-emitter voltage as a function of collector
current; typical values

PHPT61002NYCLH

1

Fig. 7.

Base-emitter saturation voltage as a function ofcollector current; typical values

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100 V, 2 A NPN high power bipolar transistor
aaa-010810

10

aaa-010812

10

VCEsat(V)

VCEsat
(V)

1

1
(1)
(3)

10-1

(2)

(1)

1

10

102

10-3
10-1

103
104
IC (mA)

IC/IB = 20
(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 8.

(3)

10-2

10-2

10-3
10-1

(2)

10-1

10

102

103
104
IC (mA)

Tamb = 25 °C(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10

Collector-emitter saturation voltage as afunction of collector current; typical values

Fig. 9.

aaa-010813

103

Collector-emitter saturation voltage as afunction of collector current; typical values

RCEsat
(Ω)

102

102

10

10
(2)
(3)

aaa-010814

103

RCEsat
(Ω)

1

1

1

(1)

(1)
(2)

10-1

10-2
10-1

1

10

102

10-2
10-1

103
104
IC (mA)

IC/IB = 20
(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Product data sheet

1

10

102

103
104
IC (mA)

Tamb = 25 °C(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10

Fig. 10. Collector-emitter saturation resistance as afunction of collector current; typical values

PHPT61002NYCLH

(3)

10-1

Fig. 11. Collector-emitter saturation resistance as afunction of collector current; typical values

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100 V, 2 A NPN high power bipolar transistor

11. Test informationIB
input pulse(idealized waveform)

90 %IBon (100 %)
10 %
IBoff

output pulse(idealized waveform)

IC
90 %

IC (100 %)

10 %
t
td

ts

tr
ton

tf
toff

006aaa003

Fig. 12. Switching time definition
VBB
RB

VCC
RC

Vo

(probe)oscilloscope
450 Ω(probe)
450 Ω

R2

VI

oscilloscope

DUT

R1
mlb826

Fig. 13. Test circuit for switching times

PHPT61002NYCLH

Product data sheet

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100 V, 2 A NPN high power bipolar transistor

12. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads

E

A2

A

SOT669

C

c2

b2

E1
b3

L1
mounting
base

b4
D1

D

H

L2

1

2

3

e

4
w

b

A

X

c

1/2 e

A

(A3)
A1

C
q
L

detail X

0

y C

θ

5 mm

8°

scale

0°

Dimensions (mm are the original dimensions)
Unit(1)
mm

A

A1

A2

A3

b

c

c2

D(1) D1(1) E(1) E1(1)

b2

b3

b4

max 1.20 0.15 1.10
0.50 4.41
nom
0.25
min 1.01 0.00 0.95
0.35 3.62

2.2

0.9

0.25 0.30 4.10 4.20

5.0

3.3

2.0

0.7

0.19 0.24 3.80

4.8

3.1

e
1.27

H

L

L1

L2

6.2

0.85

1.3

1.3

5.8

0.40

0.8

0.8

Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Outlineversion
SOT669References
IEC

JEDEC

JEITA

w

y

0.25

0.1

sot669_po

Europeanprojection

Issue date
11-03-25
13-02-27

MO-235

Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)

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100 V, 2 A NPN high power bipolar transistor

13. Soldering
Footprint information for reflow soldering

SOT669

4.7
4.2
0.9
(3×)

0.25
(2×)

0.25
(2×)

0.6
(4×)

3.45
0.6
(3×)

2

3.5

2.55

0.25
(2×)
SR opening =Cu + 0.075

1.1
2.15
3.3

SP opening =Cu - 0.050

0.7
(4×)

1.27
3.81

solder lands

solder paste
125 µm stencil

solder resist

occupied area

Dimensions in mm

sot669_fr

Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)

PHPT61002NYCLH

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100 V, 2 A NPN high power bipolar transistor
Wave soldering footprint information for LFPAK56 package

SOT669

4.826

1.78

1.72

2.1

1.4

0.6 (x4)

1.27
0.635

solder lands
Dimensions in mm
Issue date

15-04-13
15-04-16

sot669_fw

Fig. 16. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669)

PHPT61002NYCLH

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100 V, 2 A NPN high power bipolar transistor

14. Revision history
Table 8. Revision history
Data sheet ID
Release date

Data sheet status

Change notice

Supersedes

PHPT61002NYCLH v.2 20230324

Product data sheet-

PHPT61002NYCLH v.1--

Modifications:•

Test information corrected

PHPT61002NYCLH v.1 20170331

PHPT61002NYCLH

Product data sheet

Product data sheet

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100 V, 2 A NPN high power bipolar transistor

15. Legal information

injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products insuch equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.

Data sheet status

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Document status[1][2]

Product
status [3]Definition

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.

Definitions
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included hereinand shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement bevalid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.

Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes no responsibility
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for the products described herein shall be limited in accordance with theTerms and conditions of commercial sale of Nexperia.
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to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
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warranted to be suitable for use in life support, life-critical or safety-criticalsystems or equipment, nor in applications where failure or malfunctionof an Nexperia product can reasonably be expected to result in personal

PHPT61002NYCLH

Product data sheet

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability forany assistance with applications or customer product design. It is customer’ssole responsibility to determine whether the Nexperia product is suitableand fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards tominimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for thecustomer’s applications and products using Nexperia products in order toavoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement isconcluded only the terms and conditions of the respective agreement shallapply. Nexperia hereby expressly objects to applying the customer’s generalterms and conditions with regard to the purchase of Nexperia products bycustomer.
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accepts no liability for inclusion and/or use of non-automotive qualified
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In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)whenever customer uses the product for automotive applications beyond
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between the translated and English versions.

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100 V, 2 A NPN high power bipolar transistor

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information.......................................................... 8
12. Package outline.......................................................... 9
13. Soldering................................................................... 10
14. Revision history........................................................12
15. Legal information......................................................13© Nexperia B.V. 2023. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 24 March 2023

PHPT61002NYCLH

Product data sheet

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