BC817DPN

NPN/PNP general purpose transistor
27 November 2019

Product data sheet

1. General description
NPN/PNP general-purpose double transistors in an SOT457 (SC-74) plastic package.

2. Features and benefits•••

Reduces component count
Reduces pick and place costs
AEC-Q101 qualified

3. Applications•

General purpose switching and amplification

4. Quick reference data
Table 1. Quick reference data
SymbolParameter

Conditions

MinTypMax

Unit--45V--500mA--

1A-400

Per transistor; for the PNP transistor with negative polarity
VCEO

collector-emittervoltage

ICcollector current

ICM

peak collector current

open basesingle pulse; tp ≤ 1 ms

Per transistor unless otherwise specified; for the PNP transistor with negative polarityhFE[1]

DC current gain

VCE = 1 V; IC = 100 mA

[1]

160

Pulsed test: tp ≤ 300 μs; δ ≤ 0.02

5. Pinning information
Table 2. Pinning information
PinSymbol
Description
1

E1

emitter TR1

2

B1

base TR1

3

C2

collector TR2

4E2

emitter TR2

5B2

base TR2

6C1collector TR1

Simplified outline

Graphic symbol

65412

3SC-74; TSOP6 (SOT457)

C1

B2

TR2TR1
E1E2

B1C2sym019

BC817DPN

Nexperia

NPN/PNP general purpose transistor

6. Ordering information
Table 3. Ordering information
Type numberPackage
Name
BC817DPN

Description

VersionSC-74; TSOP6 plastic, surface-mounted package (SC-74; TSOP6); 6 leads

SOT457

7. Marking
Table 4. Marking codes
Type number

Marking code

BC817DPN

N4

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

MinMaxUnit

Per transistor; for the PNP transistor with negative polarity
VCBOcollector-base voltage

open emitter

-

50

VVCEO

collector-emitter voltage

open base-45

VVEBO

emitter-base voltage

open collector-

5V

ICcollector current

-

500mA

ICM

peak collector current

-

1AIBM

peak base current

-

200mA

Ptot

total power dissipation-370mW

Tj

junction temperature

-

150°C

Tamb

ambient temperature

-65

150°C

Tstg

storage temperature

-65

150°C

-

600mW

single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C[1]

Per device
Ptot
[1]

total power dissipation

Tamb ≤ 25 °C[1]

2

Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin plated; mounting pad for collector 1 cm .

9. Thermal characteristics
Table 6. Thermal characteristics
SymbolParameter

Conditions

Min

TypMaxUnit--

208

K/W

Per device
Rth(j-a)[1]

thermal resistance from in free air
junction to ambient[1]

2

Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm .

BC817DPN

Product data sheet

All information provided in this document is subject to legal disclaimers.

27 November 2019

© Nexperia B.V. 2019. All rights reserved

2/9BC817DPN

Nexperia

NPN/PNP general purpose transistor

10. Characteristics
Table 7. Characteristics
SymbolParameterConditions

MinTypMax

Unit

Per transistor unless otherwise specified; for the PNP transistor with negative polarity
collector-base cut-off
current

VCB = 20 V; IE = 0 A; Tamb = 25 °C--100nAVCB = 20 V; IE = 0 A; Tj = 150 °C

--5µA

IEBO

emitter-base cut-off
current

VEB = 5 V; IC = 0 A; Tamb = 25 °C--100nAhFE

DC current gain

VCE = 1 V; IC = 100 mA[1]160-400

VCE = 1 V; IC = 500 mA; Tamb = 25 °C[1]40--ICBO

VCEsatcollector-emittersaturation voltage

IC = 500 mA; IB = 50 mA; Tamb = 25 °C[1]--700mV

VBE

base-emitter voltage

VCE = 1 V; IC = 500 mA[1] [2]--1.2

V

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C

-5-pF

fT

transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C

100--MHzCc

collector capacitanceVCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C-9-pF

fT

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz;
Tamb = 25 °C

80--MHzNPN transistor

PNP transistor

[1]
[2]

Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
VBE decreases by approximately -2 mV/k with increasing temperature.
mbl747500hFE(1)

400

mbl748

1000
IC(mA)IB (mA) = 15
12.0
9.0

800

6.0
600

300
(2)

7.5
4.5

400

1.5(3)

200

100

110102IC (mA)

010302468VCE (V)10Tamb = 25 °C

VCE = 1 V
(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 1.

10.5

3.0200010- 1

13.5

Fig. 2.

TR1 (NPN): Collector current as a function ofcollector-emitter voltage; typical values

TR1 (NPN): DC current gain as a function ofcollector current; typical values

BC817DPN

Product data sheet

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BC817DPN

Nexperia

NPN/PNP general purpose transistor
mbl749103

mbl7501200
VBE(mV)
1000

VCEsat(mV)

(1)

800
(2)

102
600
(1)

(3)

400(2)(3)1010- 1Fig. 3.

110102IC (mA)

20010- 1103

1102

10IC (mA)103

IC/IB = 10(1) Tamb = 150°C(2) Tamb = 25 °C(3) Tamb = -55 °C

VCE = 1 V
(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C

TR1 (NPN): Collector-emitter saturation voltage Fig. 4.
as a function of collector current; typical values

TR1 (NPN): Base-emitter voltage as a functionof collector current; typical values

mhc324600hFE500

MHC325-1000
IC(mA)(1)-6.3-5.6-4.9IB (mA) = -7-800-4.2-3.5400-600
300-2.8(2)-2.1-400

200-1.4(3)-200

1000- 10- 1-1- 10- 102

IC (mA)0- 1030-2-4-6-8-10VCE (V)Tamb = 25 °C

VCE = -1 V
(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C
Fig. 5.

-0.7

Fig. 6.

TR2 (PNP): Collector current as a function ofcollector-emitter voltage; typical values

TR2 (PNP): DC current gain as a function ofcollector current; typical values

BC817DPN

Product data sheet

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BC817DPN

Nexperia

NPN/PNP general purpose transistor
mhc326- 103

mhc327- 1200VBE(mV)

VCEsat(mV)- 1000

- 102

(2)

- 600

(3)

- 10

(1)

- 800

(1)
(2)

- 400

-1
- 10- 1Fig. 7.

-1

- 102

- 10

IC (mA)(3)- 200- 10- 1- 103

-1- 10- 102

IC (mA)- 103

IC/IB = 10(1) Tamb = 150°C(2) Tamb = 25 °C(3) Tamb = -55 °C

VCE = -1 V
(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C

TR2 (PNP): Collector-emitter saturation voltage Fig. 8.
as a function of collector current; typical values

TR2 (PNP): Base-emitter voltage as a functionof collector current; typical values

11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.

12. Package outline
3.1
2.7
6

3.0
2.5

1.7
1.3

1.1
0.9
5423

0.6
0.2

pin 1 index

10.95
1.9

0.40
0.25

Dimensions in mm

Fig. 9.

0.26
0.10
18-03-11

Package outline SC-74; TSOP6 (SOT457)

BC817DPN

Product data sheet

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BC817DPN

Nexperia

NPN/PNP general purpose transistor

13. Soldering
3.451.95

0.45 0.55(6×) (6×)

0.95

solder lands
solder resist

3.3 2.825
0.95

solder paste
occupied area
0.7(6×)

Dimensions in mm

0.8(6×)2.4

sot457_fr

Fig. 10. Reflow soldering footprint for SC-74; TSOP6 (SOT457)
5.3

1.5(4×)1.475
0.45(2×)

5.05
1.475

solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering

1.45(6×)2.85

sot457_fw

Fig. 11. Wave soldering footprint for SC-74; TSOP6 (SOT457)

BC817DPN

Product data sheet

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BC817DPN

Nexperia

NPN/PNP general purpose transistor

14. Revision history
Table 8. Revision history
Data sheet ID
Release date

Data sheet status

Change notice

Supersedes

BC817DPN v.3

20191127

Product data sheet-BC817DPN v.2

Modifications:••

The format of this data sheet has been redesigned to comply with the identity guidelines ofNexperia.
Legal texts have been adapted to the new company name where appropriate.

BC817DPN v.220021122

Product data sheet-BC817DPN v.1

BC817DPN v.1

20020809

Product data sheet--BC817DPN

Product data sheet

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27 November 2019

© Nexperia B.V. 2019. All rights reserved

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BC817DPN

Nexperia

NPN/PNP general purpose transistor
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15. Legal information
Data sheet status
Document status[1][2]

Productstatus [3]Definition

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
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This document contains data fromthe preliminary specification.

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or warranty that such applications will be suitable for the specified use
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Product [short]data sheet

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This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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agreed in writing, the product is not designed, authorized or warranted tobe suitable for use in life support, life-critical or safety-critical systems orBC817DPN

Product data sheet

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NPN/PNP general purpose transistor

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 2
10. Characteristics............................................................ 311. Test information.......................................................... 512. Package outline.......................................................... 513. Soldering..................................................................... 614. Revision history..........................................................715. Legal information........................................................8© Nexperia B.V. 2019. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 27 November 2019BC817DPNProduct data sheet

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