83B

PDTC144EMB
SO

T8

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ
Rev. 1 — 11 June 2012

Product data sheet

1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B
Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA144EMB.

1.2 Features and benefits
 100 mA output current capability

 Simplifies circuit design Reduces component count AEC-Q101 qualified Built-in bias resistors

 Leadless ultra small SMD plastic
package Reduces pick and place costs

 Low package height of 0.37 mm

1.3 Applications
 Low-current peripheral driver Control of IC inputs

 Replaces general-purpose transistors
in digital applications
 Mobile applications

1.4 Quick reference data
Table 1.

Quick reference data

SymbolParameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter
voltageopen base

-

-

50

V

IO

output current

-

-

100

mA

R1

bias resistor 1 (input)

33

47

61

kΩ

R2/R1

bias resistor ratio

0.8

1

1.2

Tamb = 25 °C

PDTC144EMBNXP Semiconductors

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

2. Pinning information
Table 2.

Pinning information

Pin

Symbol Description

1

I

input (base)2

G

GND (emitter)

Simplified outline

Graphic symbol

1

3
3

3

O

output (collector)

R1

1

2
Transparent
top view

R2

2

SOT883B (DFN1006B-3)

sym007

3. Ordering information
Table 3.

Ordering information

Type number
PDTC144EMB

Package
Name

Description

Version

DFN1006B-3

Leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.37 mm

SOT883B

4. Marking
Table 4.

Marking codes

Type number

Marking code

PDTC144EMB

0011 1100

PIN 1 INDICATIONREADING DIRECTIONREADING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673

Fig 1.

DFN1006B-3 (SOT883B) binary marking code description

PDTC144EMB

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 11 June 2012

© NXP B.V. 2012. All rights reserved.

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PDTC144EMBNXP Semiconductors

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

5. Limiting values
Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

positive-

40

V

negative

-

-10

V

-

100

mA

IO

output current

ICM

peak collector current

pulsed; tp ≤ 1 ms

Ptot

total power dissipation

Tamb ≤ 25 °C

Tj

-

100

mA

-

250

mW

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1]

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

006aad009

300
Ptot
(mW)
200

100

0
-75

-25

25

75

125
175
Tamb (°C)

FR4 PCB, standard footprint
Fig 2.

Power derating curve for DFN1006B-3 (SOT883B)

6. Thermal characteristics
Table 6.

Thermal characteristics

SymbolParameter

Conditions

Rth(j-a)thermal resistancefrom junction toambient

in free air

[1]

[1]

Min

Typ

Max

Unit

-

-

500

K/W

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

PDTC144EMB

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 11 June 2012

© NXP B.V. 2012. All rights reserved.

3 of 11

PDTC144EMBNXP Semiconductors

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

006aab603

103
duty cycle =1

Zth(j-a)
(K/W)

0.75
0.5
0.33

102

0.2
0.1
0.05
0.02

10

0.01
0

1
10−5

10−4

10−3

10−2

10−1

1

102

10

103
tp (s)

FR4 PCB, standard footprint
Fig 3.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics
Table 7.

Characteristics

SymbolParameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off
current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

ICEO

collector-emitter cut-off VCE = 30 V; IB = 0 A; Tamb = 25 °C
current
VCE = 30 V; IB = 0 A; Tj = 150 °C

-

-

1

µA

-

-

5

µA

IEBO

emitter-base cut-off
current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

90

µA

hFE

DC current gain

VCE = 5 V; IC = 5 mA; Tamb = 25 °C

80

-

-

VCEsatcollector-emittersaturation voltage

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

-

-

150

mV

VI(off)off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

-

1.2

0.8

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 2 mA; Tamb = 25 °C

3

1.6

-

V

R1

bias resistor 1 (input)

Tamb = 25 °C

33

47

61

kΩ

R2/R1

bias resistor ratio

0.8

1

1.2

CC

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C

-

-

2.5

pF

fT

transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C

-

230

-

MHz

[1]

Characteristics of built-in transistor.

PDTC144EMB

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 11 June 2012

[1]

© NXP B.V. 2012. All rights reserved.

4 of 11

PDTC144EMBNXP Semiconductors

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

006aac752

103hFE

006aac753

1(1)

VCEsat
(V)

(2)
(3)

102

(1)
(2)

10-1

(3)

10

1
10-1

1

102

10

10-2
10-1

1

IC (mA)

IC/IB = 20

VCE = 5 V

Fig 4.

(1) Tamb = 100 °C(1) Tamb = 100 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = -40 °C(3) Tamb = -40 °C

DC current gain as a function of collector
current; typical values

Fig 5.

006aac754

10Collector-emitter saturation voltage as afunction of collector current; typical values
006aac755

10

VI(off)(V)

VI(on)
(V)
(1)

(1)

(2)

(2)

(3)

1

10-1
10-1

1

(3)

1

102

10

10-1
10-1

IC (mA)Fig 6.

102

10

IC (mA)

VCE = 5 V

(1) Tamb = -40 °C(1) Tamb = -40 °C(2) Tamb = 25 °C(2) Tamb = 25 °C(3) Tamb = 100 °C(3) Tamb = 100 °C

On-state input voltage as a function of collector
current; typical values

Product data sheet

10
IC (mA)

VCE = 0.3 V

PDTC144EMB

1

Fig 7.

Off-state input voltage as a function of collector
current; typical values

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 11 June 2012

© NXP B.V. 2012. All rights reserved.

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PDTC144EMBNXP Semiconductors

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

006aac756

2.0006aac757

103

Cc
(pF)
1.6

fT
(MHz)

1.2
102
0.8

0.4

10
10-1

0.0
0

10

20

30

40
50
VCB (V)

102

10
IC (mA)f = 1 MHz; Tamb = 25 °C
Fig 8.

1

VCE = 5 V; Tamb = 25 °C

Collector capacitance as a function ofcollector-base voltage; typical values

Fig 9.

Transition frequency as a function of collector
current; typical values of built-in transistor

8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.

PDTC144EMB

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 11 June 2012

© NXP B.V. 2012. All rights reserved.

6 of 11

PDTC144EMBNXP Semiconductors

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

9. Package outline
0.65
0.55

0.40
0.34

0.35
0.20
0.12
1

0.04 max

2
0.30
0.22

1.05
0.65
0.95
0.30
0.22
3
0.55
0.47
Dimensions in mm

11-11-02

Fig 10. Package outline SOT883B (DFN1006B-3)

10. Soldering
Footprint information for reflow soldering

SOT883B

1.3
0.7

R0.05 (8x)

0.9

0.6

0.7

0.25
(2x)

0.3
(2x)

0.3

0.4
(2x)

0.4

solder landsolder land plus solder paste

solder paste deposit

solder resist

occupied area

Dimensions in mm

sot883b_fr

Fig 11. Reflow soldering footprint for SOT883B (DFN1006B-3)

PDTC144EMB

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 11 June 2012

© NXP B.V. 2012. All rights reserved.

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PDTC144EMBNXP Semiconductors

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

11. Revision history
Table 8.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PDTC144EMB v.1

20120611

Product data sheet--

PDTC144EMB

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 11 June 2012

© NXP B.V. 2012. All rights reserved.

8 of 11

PDTC144EMBNXP Semiconductors

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

12. Legal information
12.1 Data sheet status
Document status[1] [2]Product status[3]Definition

Objective [short] data sheet

Development

This document contains data from the objective specification for product development.

Preliminary [short] data sheet

Qualification

This document contains data from the preliminary specification.

Product [short] data sheet

Production

This document contains the product specification.

[1]

Please consult the most recently issued document before initiating or completing a design.

[2]

The term 'short data sheet' is explained in section "Definitions".

[3]

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest productstatus information is available on the Internet at URLhttp://www.nxp.com.

12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences ofuse of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the NXP Semiconductors product isdeemed to offer functions and qualities beyond those described in the
Product data sheet.

12.3 Disclaimers
Limited warranty and liability — Information in this document is believed tobe accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy orcompleteness of such information and shall have no liability for theconsequences of use of such information. NXP Semiconductors takes noresponsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordancewith theTerms and conditions of commercial sale of NXP Semiconductors.
PDTC144EMB

Product data sheet

Right to make changes — NXP Semiconductors reserves the right to makechanges to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability forinclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer productdesign. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications andproducts planned, as well as for the planned application and use ofcustomer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with theirapplications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in thecustomer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications andthe products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the

All information provided in this document is subject to legal disclaimers.

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© NXP B.V. 2012. All rights reserved.

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PDTC144EMBNXP Semiconductors

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted orconstrued as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents orother industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a priorauthorization from competent authorities.

Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.

12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.

13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com

PDTC144EMB

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 11 June 2012

© NXP B.V. 2012. All rights reserved.

10 of 11

PDTC144EMBNXP Semiconductors

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . .6
Quality information . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Contact information. . . . . . . . . . . . . . . . . . . . . .10

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

© NXP B.V. 2012.

All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 June 2012
Document identifier: PDTC144EMB