DISCRETE SEMICONDUCTORSDATA SHEETPDTA124T series
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
Product data sheet
Supersedes data of 2004 May 05

2004 Aug 04

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

FEATURESQUICK REFERENCE DATA

• Built-in bias resistors

SYMBOL• Simplified circuit design

VCEO• Reduction of component count• Reduced pick and place costs.
APPLICATIONSPARAMETER

TYP.

MAX.

UNIT

collector-emitter
voltage−−50V

IO

output current (DC)−−100mA

R1bias resistor

22−kΩ

R2

open−−−• General purpose switching and amplification• Inverter and interface circuits

DESCRIPTION• Circuit driver.

PNP resistor-equipped transistor (see “Simplified outline,symbol and pinning” for package details).

PRODUCT OVERVIEWPACKAGETYPE NUMBER

MARKING CODENPN COMPLEMENTPHILIPSEIAJ

PDTA124TE

SOT416

SC-75

3R

PDTC124TE

PDTA124TEF

SOT490SC-89

24

PDTC124TEF

PDTA124TK

SOT346SC-59

59

PDTC124TK

PDTA124TM

SOT883

SC-101

DJ

PDTC124TM

PDTA124TS

SOT54 (TO-92)

SC-43

TA124T

PDTC124TS

PDTA124TT

SOT23−*AE(1)

PDTC124TT

PDTA124TU

SOT323SC-70*7B(1)

PDTC124TU

Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.

2004 Aug 04

2NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

SIMPLIFIED OUTLINE, SYMBOL AND PINNINGPINNINGTYPE NUMBERSIMPLIFIED OUTLINE AND SYMBOLPDTA124TS

handbook, halfpage

PIN

DESCRIPTION

1base

2

collector

3emitter

1base

2emitter3

collector

1base

2emitter

3collector

21R11233
MAM352

PDTA124TE
PDTA124TEF
PDTA124TK

handbook, halfpage

33R1

PDTA124TT

1PDTA124TU
122Top view

MDB272

PDTA124TM
handbook, halfpage

3R123

112
Bottom view
MDB268

2004 Aug 04

3NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

ORDERING INFORMATIONPACKAGETYPE
NUMBERNAME

PDTA124TE−

plastic surface mounted package; 3 leads

SOT416

PDTA124TEF−

plastic surface mounted package; 3 leads

SOT490

PDTA124TK−

plastic surface mounted package; 3 leads

SOT346

PDTA124TM−

leadless ultra small plastic package; 3 solder lands; body
1.0 × 0.6 × 0.5 mm

SOT883

PDTA124TS−

plastic single-ended leaded (through hole) package; 3 leads

SOT54

PDTA124TT−

plastic surface mounted package; 3 leads

SOT23

PDTA124TU−

plastic surface mounted package; 3 leads

SOT323DESCRIPTIONVERSION

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOLPARAMETERCONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter−−50VVCEO

collector-emitter voltage

open base−−50VVEBO

emitter-base voltage

open collector−−5VIO

output current (DC)−−100mA

ICM

peak collector current−−100mA

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT23

note 1−

250mW

SOT54

note 1−500mW

SOT323

note 1−200mW

SOT346note 1−250mW

SOT416note 1−150mW

SOT490notes 1 and 2−

250mW

SOT883notes 2 and 3−

250mW

Tstg

storage temperature−65+150°C

Tj

junction temperature−150°C

Tamboperating ambient temperature−65+150°CNotes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.

2004 Aug 04

4NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

THERMAL CHARACTERISTICSSYMBOLRth(j-a)

PARAMETERCONDITIONS

thermal resistance from junction to ambient

VALUE

UNIT

in free air

SOT23

note 1500

K/W

SOT54

note 1250

K/W

SOT323note 1625

K/W

SOT346note 1500

K/W

SOT416note 1833

K/W

SOT490notes 1 and 2500

K/W

SOT883notes 2 and 3500

K/W

Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOLPARAMETERCONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −50 V; IE = 0 A−−−100nA

ICEO

collector-emitter cut-off current

VCE = −30 V; IB = 0 A−−−1μA

VCE = −30 V; IB = 0 A;
Tj = 150 °C−−−50μA
nAIEBOemitter-base cut-off current

VEB = −5 V; IC = 0 A−−−100hFE

DC current gain

VCE = −5 V; IC = −1 mA

100−−VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA−−−150mV

R1

input resistor

15.4

2228.6kΩCccollector capacitance−−3pF

2004 Aug 04

IE = ie = 0 A; VCB = −10 V;
f = 1 MHz5NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

PACKAGE OUTLINES
Plastic surface-mounted package; 3 leads

SOT23DEBAX

HEv M A

3QA
A1

12
e1

bpcw M B

Lpedetail X

0

12 mmscale

DIMENSIONS (mm are the original dimensions)
UNITA

A1max.

bpcDEee1HE

LpQvw

mm

1.1
0.9

0.1

0.48
0.38

0.15
0.09

3.0
2.8

1.4
1.2

1.9

0.95

2.5
2.1

0.45
0.15

0.55
0.45

0.2

0.1OUTLINEVERSION
SOT23

2004 Aug 04

REFERENCES
IEC

JEDEC

JEITA

EUROPEAN
PROJECTION

ISSUE DATE
04-11-04
06-03-16

TO-236AB

6

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

Plastic single-ended leaded (through hole) package; 3 leads

SOT54

cEdA

Lb1e12De3b1

L10

2.5

5 mmscale

DIMENSIONS (mm are the original dimensions)
UNITAbb1c

DdEmm

5.2
5.0

0.48
0.40

0.66
0.55

0.45
0.38

4.8
4.4

1.7
1.4

4.23.6e
2.54

e1

L

L1(1)

1.27

14.5
12.7

2.5max.

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54

2004 Aug 04

REFERENCES
IEC

JEDEC

JEITA

TO-92

SC-43A

7EUROPEAN
PROJECTION

ISSUE DATE
04-06-28
04-11-16

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

Plastic surface-mounted package; 3 leads

SOT323DEB

AXHEyv M A

3QA

A1c12e1bpLpw M Bedetail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNIT

A

A1max

bpcDEee1HE

LpQv

w

mm

1.1
0.8

0.1

0.4
0.3

0.25
0.10

2.2
1.8

1.35
1.15

1.3

0.65

2.2
2.0

0.45
0.15

0.23
0.13

0.2

0.2

OUTLINE
VERSION
SOT323

2004 Aug 04

REFERENCES
IEC

JEDEC

JEITA
SC-70

8

EUROPEAN
PROJECTION

ISSUE DATE
04-11-04
06-03-16

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

Plastic surface-mounted package; 3 leads

SOT346E
DA

BX

HEv M A

3QA
A11c2
e1

bp

Lpw M Bedetail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNIT

A

A1bpc

DE

ee1

HE

Lp

Qvw

mm

1.3
1.0

0.1
0.013

0.50
0.35

0.26
0.10

3.1
2.7

1.7
1.3

1.9

0.95

3.0
2.5

0.6
0.2

0.33
0.23

0.2

0.2

OUTLINE
VERSION
SOT346

2004 Aug 04

REFERENCES
IEC

JEDEC

JEITA

TO-236SC-59A

9EUROPEAN
PROJECTION

ISSUE DATE
04-11-11
06-03-16

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

Plastic surface-mounted package; 3 leads

SOT416

DEBAXHEv M A

3QA

1A12
e1c

bp

w M B
Lpe
detail X

00.5

1 mmscale

DIMENSIONS (mm are the original dimensions)
UNITA

A1max

bpc

DEee1HE

LpQv

w

mm

0.95
0.60

0.1

0.30
0.15

0.25
0.10

1.8
1.4

0.9
0.7

10.5

1.75
1.45

0.45
0.15

0.23
0.13

0.2

0.2

OUTLINE
VERSION
SOT416

2004 Aug 04

REFERENCES
IEC

JEDEC

JEITA
SC-75

10EUROPEAN
PROJECTION

ISSUE DATE
04-11-04
06-03-16

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

Plastic surface-mounted package; 3 leads

SOT490DE

B

AX

HEv M A

3A

1c2
e1

bp

w M B

Lpedetail X

012 mmscale

DIMENSIONS (mm are the original dimensions)
UNITA

bpc

DEee1HE

Lpv

w

mm

0.8
0.6

0.33
0.23

0.2
0.1

1.7
1.5

0.95
0.75

1.0

0.5

1.71.50.50.30.1

0.1

OUTLINE
VERSION
SOT4902004 Aug 04

REFERENCES
IEC

JEDEC

JEITA
SC-89

11EUROPEAN
PROJECTION

ISSUE DATE
05-07-28
06-03-16

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm

L

SOT883

L12b3eb1

1e1

A
A1

E

D00.51 mmscale
DIMENSIONS (mm are the original dimensions)
UNIT

A (1)

A1max.

bb1

DEee1

L

L1mm

0.50
0.46

0.03

0.20
0.12

0.55
0.47

0.62
0.55

1.02
0.95

0.35

0.65

0.30
0.22

0.30
0.22

Note
1. Including plating thickness
OUTLINE
VERSION
SOT883

2004 Aug 04

REFERENCES
IEC

JEDEC

JEITA
SC-101

12

EUROPEAN
PROJECTION

ISSUE DATE
03-02-05
03-04-03

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open

PDTA124T series

DATA SHEET STATUS
DOCUMENTSTATUS(1)PRODUCTSTATUS(2)Objective data sheet

Development

This document contains data from the objective specification for productdevelopment.

Preliminary data sheet

Qualification

This document contains data from the preliminary specification.

Product data sheet

Production

This document contains the product specification.

DEFINITION

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
operation of the device at these or any other conditions
above those given in the Characteristics sections of thisdocument is not implied. Exposure to limiting values forextended periods may affect device reliability.

DISCLAIMERS
General ⎯ Information in this document is believed to beaccurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completenessof such information and shall have no liability for theconsequences of use of such information.

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products are sold subject to the general terms andconditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including thosepertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between informationin this document and such terms and conditions, the latter
will prevail.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time andwithout notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable foruse in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunctionof an NXP Semiconductors product can reasonably beexpected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at
the customer’s own risk.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell productsthat is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents orother industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)described herein may be subject to export control
regulations. Export might require a prior authorization fromnational authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values andCharacteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage tothe device. Limiting values are stress ratings only and2004 Aug 0413

NXP Semiconductors

Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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For additional information please visit: http://www.nxp.com
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Printed in The Netherlands

R75/03/pp14

Date of release: 2004 Aug 04

Document order number: 9397 750 13653