BCP54-Q series

45 V, 1 A NPN medium power transistors
Rev. 1 — 2 May 2022

Product data sheet

1. General description
NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD)
plastic package.

2. Features and benefits••••

High collector current capability IC and ICM
Three current gain selections
High power dissipation capability
Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications
•
•
•
•
•
•

Linear voltage regulators
MOSFET drivers
Low-side switches
Battery-driven devices
Power management
Amplifiers

4. Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
SymbolParameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage

open base

-

-

45

V

IC

collector current

-

-

1

A

ICM

peak collector current

-

-

2

A

hFE

DC current gain
[1]

63

-

250

BCP54-10-Q

[1]

63

-

160

BCP54-16-Q

[1]

100

-

250

BCP54-Q[1]

pulsed; tp ≤ 300 μs; δ ≤ 0.02

single pulse; tp ≤ 1 ms
VCE = 2 V; IC = 150 mA

BCP54-Q series

Nexperia

45 V, 1 A NPN medium power transistors

5. Pinning information
Table 2. Pinning
Pin

SymbolDescription

1

B

base

2

C

collector

3E

emitter4

Ccollector

Simplified outline

Graphic symbol
C; C

4

B
1

2

3

E
sym016

6. Ordering information
Table 3. Ordering information
Type number
Package
BCP54-Q
BCP54-10-Q

Name

Description

VersionSC-73

plastic, surface-mounted package with increased heatsink; 4
leads

SOT223

BCP54-16-Q

7. Marking
Table 4. Marking
Type number

Marking code

BCP54-Q

BCP54

BCP54-10-Q

BCP54/10

BCP54-16Q

BCP54/16

BCP54-Q_SER

Product data sheet

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BCP54-Q series

Nexperia

45 V, 1 A NPN medium power transistors

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Tamb = 25 °C unless otherwise specified.
SymbolParameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

45

V

VCEO

collector-emitter voltage

open base

-

45

V

VEBO

emitter-base voltage

open collector

-

5

V

IC

collector current

-

1

A

ICM

peak collector current

-

2

A

IB

base current

-

0.3

A

IBM

peak base current

single pulse; tp ≤ 1 ms

-

0.3

A

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

0.65

W

[2]

-

1.00

W

[3]

-

1.35

W

single pulse; tp ≤ 1 ms

Tjjunction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1]
[2]
[3]

Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
2
Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm .
2
Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm .
006aac674

1.5

(1)

Ptot
(W)
(2)

1.0

(3)

0.5

0.0
-75

-25

25

75

125
175
Tamb (°C)2(1) FR4 PCB, mounting pad for collector 6 cm
2(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Fig. 1.

Power derating curves SOT223

BCP54-Q_SER

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BCP54-Q series

Nexperia

45 V, 1 A NPN medium power transistors

9. Thermal characteristics
Table 6. Thermal characteristics
Tamb = 25 °C unless otherwise specified.
SymbolParameter

Conditions

Rth(j-a)thermal resistance from junction to ambientin free air

[1]

Min

Typ

Max

Unit

-

-

195

K/W

125

K/W

93

K/W

16

K/W

[2]
[3]
R(j-sp)
[1]
[2]
[3]

thermal resistance from junction to solder point--

Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm .
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm .
006aac677

103
Zth(j-a)(K/W)

duty cycle = 1

102

0.5
0.2

0.75
0.33
0.1

10

0.05

0.02

0.01
1

0

10- 1
10- 5

10- 4

10- 3

10- 2

10- 1

1

10

102

tp (s)

103

FR4 PCB; single-sided copper; tin-plated and standard footprint
Fig. 2.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac678

103
Zth(j-a)(K/W)
102

duty cycle = 1
0.5
0.2

10

1

0.75
0.33
0.1

0.05

0

10- 1
10- 5

0.02
0.01

10- 4

10- 3

10- 2

10- 1

1

FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm
Fig. 3.

10102

tp (s)

103

2

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BCP54-Q_SER

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BCP54-Q series

Nexperia

45 V, 1 A NPN medium power transistors
006aac679

103
Zth(j-a)(K/W)
102

duty cycle = 1
0.5
0.2

0.75
0.33
0.1

10
0.05

1

0

10- 1
10- 5

0.02
0.01

10- 4

10- 3

10- 2

10- 1

1

FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 6 cm
Fig. 4.

10102

tp (s)

103

2

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BCP54-Q_SER

Product data sheet

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BCP54-Q series

Nexperia

45 V, 1 A NPN medium power transistors

10. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
SymbolParameter

Conditions

Min

Typ

Max

Unit

V(BR)CBO

collector-basebreakdown voltage

IC = 100 µA; IE = 0 A

45

-

-

V

V(BR)CEOcollector-emitter
breakdown voltage

IC = 2 mA; IB = 0 A

45

-

-

V

V(BR)EBO

emitter-basebreakdown voltage

IE = 100 µA; IC = 0 A

5

-

-

V

ICBO

collector-basecut-off current

VCB = 30 V; IE = 0 A

-

-

100

nA

VCB = 30 V; IE = 0 A; Tj = 150 °C

-

-

10

µA

IEBO

emitter-basecut-off current

VEB = 5 V; IC = 0 A

-

-

100

nA

hFE

DC current gain
63

-

-

VCE = 2 V; IC = 150 mA

63

-

250

VCE = 2 V; IC = 500 mA

40

-

-

63

-

-

VCE = 2 V; IC = 150 mA

63

-

160

VCE = 2 V; IC = 500 mA

40

-

-

63

-

-

VCE = 2 V; IC = 150 mA

100

-

250

VCE = 2 V; IC = 500 mA

40

-

-

BCP54-Q

BCP54-10-Q

BCP54-16-Q

VCE = 2 V; IC = 5 mA

VCE = 2 V; IC = 5 mA

VCE = 2 V; IC = 5 mA

[1]

[1]

[1]

VCEsatcollector-emittersaturation voltage

IC = 500 mA; IB = 50 mA

[1]

-

-

0.5

V

VBE

base-emitter voltage

VCE = 2 V; IC = 500 mA

[1]

-

-

1

V

Cc

collector capacitance

VCB = 10 V; IE = ie = 0 A; f = 1 MHz

-

6

-

pF

fT

transition frequency

VCE = 5 V; IC = 50 mA; f = 100 MHz

100

180

-

MHz

[1]

pulsed; tp ≤ 300 μs; δ ≤ 0.02

BCP54-Q_SER

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BCP54-Q series

Nexperia

45 V, 1 A NPN medium power transistors
006aac691

300
hFE
(1)

200

IB (mA) = 50

IC
(A)

(2)

100

006aaa084

1.6

45

40

35

1.2

30

25
20
15

(3)

0.8

10
5

0
10- 4

10- 3

10- 2

10- 1

0.4
1

IC (A)

10

VCE = 2 V
(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = -55 °C
Fig. 5.

0

0

0.4

0.8

1.2

1.6
2.0
VCE (V)

Tamb = 25 °C

DC current gain as a function of collector
current; typical values

Fig. 6.

006aac692

1.2

Collector current as a function of collectoremitter voltage; typical values
006aac693

1

VBE
(V)

VCEsat
(V)

(1)

0.8
(2)

10- 1

(3)

(1)

0.4

(2)

(3)

0.0
10- 1

1

10

102

103
104
IC (mA)

10- 2
10- 1

VCE = 2 V
(1) Tamb = -55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C
Fig. 7.

Product data sheet

10

102

103
104
IC (mA)

IC/IB = 10
(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = -55 °C

Base-emitter voltage as a function of collector
current; typical values

BCP54-Q_SER

1

Fig. 8.

Collector-emitter saturation voltage as afunction of collector current; typical values

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BCP54-Q series

Nexperia

45 V, 1 A NPN medium power transistors

11. Test information
11.1. Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.

12. Package outline
6.7
6.3
3.1
2.9

1.8
1.5
4
1.1
0.7

7.3
6.7

3.7
3.3

1
2.3

2
4.6

3
0.8
0.6

0.32
0.22

Dimensions in mm

Fig. 9.

04-11-10

Package outline SOT223 (SC-73)

BCP54-Q_SER

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BCP54-Q series

Nexperia

45 V, 1 A NPN medium power transistors

13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2(4×) (4×)
solder lands

4solder resist
3.9

6.1 7.65

solder paste
occupied area

1

2

3

Dimensions in mm

2.3

2.3
1.2
(3×)
1.3
(3×)
6.15

sot223_fr

Fig. 10. Reflow soldering footprint for SOT223 (SC-73)
8.9
6.7

1.9
solder lands

4solder resist
6.2

1

2

8.7

Dimensions in mm

3

1.9
(3×)

2.7

occupied area

preferred transport
direction during soldering

2.7
1.1

1.9
(2×)

sot223_fw

Fig. 11. Wave soldering footprint for SOT223 (SC-73)

BCP54-Q_SER

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BCP54-Q series

Nexperia

45 V, 1 A NPN medium power transistors

14. Revision history
Table 8. Revision history
Document ID

Release date

Data sheet status

Change notice Supersedes

BCP54-Q_SER v.1

20220502

Product data sheet-

BCP54-Q_SER

Product data sheet

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BCP54-Q series

Nexperia

45 V, 1 A NPN medium power transistors
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death orsevere property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's own
risk.

15. Legal information
Data sheet status
Document status[1][2]

Product
status [3]Definition

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Objective [short]data sheet

Development

This document contains data fromthe objective specification for
product development.

Preliminary [short]data sheet

Qualification

This document contains data fromthe preliminary specification.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.

Product [short]data sheet

Production

This document contains the productspecification.

[1]
[2]
[3]

Please consult the most recently issued document before initiating orcompleting a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may havechanged since this document was published and may differ in case ofmultiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.

Definitions
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Customers are responsible for the design and operation of their applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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BCP54-Q series

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45 V, 1 A NPN medium power transistors

Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 6
11. Test information.......................................................... 8
11.1. Quality information..................................................... 8
12. Package outline.......................................................... 8
13. Soldering..................................................................... 9
14. Revision history........................................................10
15. Legal information......................................................11© Nexperia B.V. 2023. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 2 May 2022

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