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DISCRETE SEMICONDUCTORSDATA SHEETfpage

M3D087

PBSS4540Z
40 V low VCEsat NPN transistor
Product data sheet
Supersedes data of 2001 Jul 24

2001 Nov 14

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4540ZFEATURESQUICK REFERENCE DATA

• Low collector-emitter saturation voltage

SYMBOL• High current capabilities

VCEOIC• Improved device reliability due to reduced heatgeneration.
APPLICATIONS• Supply line switching circuits

PARAMETERMAXUNITemitter-collector voltage

40Vcollector current (DC)

5AICM

peak collector current

10ARCEsat

equivalent on-resistance<71mΩ

PINNING• Battery management applications

PIN• DC/DC converter applications

1base

2collector

3

emitter

4collector• Strobe flash units• Heavy duty battery powered equipment (motor and lampdrivers)• MOSFET driver applications.

DESCRIPTIONDESCRIPTION

4

handbook, halfpage

NPN low VCEsat transistor in a SOT223 plastic package.
PNP complement: PBSS5540Z.

2, 41

MARKINGTYPE NUMBER
PBSS4540Z

3

MARKING CODE

1PB4540

Top view

23
MAM287

Fig.1 Simplified outline (SOT223) and symbol.

2001 Nov 142

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4540Z

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOLPARAMETERCONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

40

V

VCEO

collector-emitter voltage

open base

−

40

V

VEBO

emitter-base voltage

open collector

−

6VIC

collector current (DC)

−

5AICM

peak collector current−

10AIBM

peak base current

−2A

Ptot

total power dissipation

Tamb ≤ 25 °C; notes 1 and 3−

1.35W

Tamb ≤ 25 °C; notes 2 and 3−

2WTstgstorage temperature−65+150°C

Tj

junction temperature−150°C

Tamb

operating ambient temperature−65+150°C

Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
3. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associatedHandbook”.
THERMAL CHARACTERISTICSSYMBOLRth j-a

PARAMETER
thermal resistance from junction toambient

CONDITIONSVALUEUNIT

note 1

92

K/W

note 2

62.5

K/W

Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

2001 Nov 143

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4540Z

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO

PARAMETER
collector-base cut-off current

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCB = 30 V; IE = 0−−100nA

VCB = 30 V; IE = 0; Tj = 150 °C−−50μA
nA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0−−100hFE

DC current gain

VCE = 2 V; IC = 500 mA

300500−VCE = 2 V; IC = 1 A; note 1300500−VCE = 2 V; IC = 2 A; note 1250450−

VCE = 2 V; IC = 5 A; note 1100300−

IC = 500 mA; IB = 5 mA

−5090mV

IC = 1 A; IB = 10 mA−75120mV

IC = 2 A; IB = 200 mA−90150mV

IC = 5 A; IB = 500 mA−

210355mV

VCEsatcollector-emitter saturation voltage

RCEsatequivalent on-resistance

IC = 5 A; IB = 500 mA; note 1−4271mΩ

VBEsatbase-emitter saturation voltage

IC = 5 A; IB = 500 mA

−1.1

1.3

VVBEonbase-emitter turn-on voltage

VCE = 2 V; IC =2 A−

0.81.1VfT

transition frequency

IC = 100 mA; VCE = 10 V;
f = 100 MHz

70130−MHzCc

collector capacitance

VCB = 10 V; IE = Ie = 0;
f = 1 MHz−60

75

pF

Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

2001 Nov 144

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4540Z

MLD6831000

MLD6841200
BE(mV)
1000

handbook,halfpage
V

handbook, halfpage

hFE
800
(1)

800(1)

600(2)

600(2)

400
400(3)

2000(3)

200

1102

10103

IC (mA)010−1104

VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.

1(3) Tamb = −55 °C.

VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.

Fig.2

Fig.3

DC current gain as a function of collector
current; typical values.

MLD685103
handbook, halfpage

10102

103
104
IC (mA)

Base-emitter voltage as a function ofcollector current; typical values.

MHC107

104
handbook, halfpage
VCEsat(mV)

VCEsat
(mV)

103

102

102
(1)
(1)

10(2)

(2)
(3)

10(3)

110−1

110102110−1103
104
IC (mA)(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.

Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.

Fig.4

Fig.5

IC/IB = 20.

Collector-emitter saturation voltage as afunction of collector current; typical values.

2001 Nov 145

110102103
104
IC (mA)

Collector-emitter saturation voltage as afunction of collector current; typical values.

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4540Z

MLD686

1300
VBEsat

MHC10612IC(A)10

handbook, halfpage

(V)
1100

8900
(1)

(2)

(3)

(4)

(5)

(6)

(7)

6700

(1)

(8)
(9)

(2)

4500

(10)

300

(3)

100
10−1

12010102103
104
IC (mA)

0IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.

400(3) Tamb = 150 °C.

(1) IB = 70 mA.
(2) IB = 63 mA.
(3) IB = 56 mA.
(4) IB = 49 mA.

Fig.6

Fig.7

Base-emitter saturation voltage as afunction of collector current; typical values.

MHC076103
handbook, halfpage
RCEsat(Ω)
102

101(1)

10−1(2)(3)

10−2
10−1110102

104
103
IC (mA)

IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.

Fig.8

Collector-emitter equivalent on-resistanceas a function of collector current; typicalvalues.

2001 Nov 14

6800

1200

(5) IB = 42 mA.
(6) IB = 35 mA.
(7) IB = 28 mA.
(8) IB = 21 mA.

1600
2000
VCE (mV)(9) IB = 14 mA.
(10) IB = 7 mA.

Collector current as a function ofcollector-emitter voltage; typical values.

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4540Z

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 4 leads

DSOT223EBAXcyHEv M A

b1

4QA
A1

1

23

Lp

bp

e1

w M B

detail X

e0

24 mmscale

DIMENSIONS (mm are the original dimensions)
UNITA

A1

bp

b1

c

DEee1

HE

LpQv

wymm

1.8
1.5

0.10
0.01

0.80
0.60

3.1
2.9

0.32
0.22

6.7
6.3

3.7
3.3

4.6

2.3

7.3
6.7

1.1
0.70.95
0.85

0.2

0.1

0.1

OUTLINE
VERSION
SOT2232001 Nov 14

REFERENCES
IEC

JEDEC

EIAJ
SC-73

7

EUROPEAN
PROJECTION

ISSUE DATE
97-02-28
99-09-13

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4540ZDATA SHEET STATUS
DOCUMENTSTATUS(1)PRODUCTSTATUS(2)Objective data sheet

Development

This document contains data from the objective specification for productdevelopment.

Preliminary data sheet

Qualification

This document contains data from the preliminary specification.

Product data sheet

Production

This document contains the product specification.

DEFINITION

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of thisdocument is not implied. Exposure to limiting values forextended periods may affect device reliability.

DISCLAIMERS
General ⎯ Information in this document is believed to beaccurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completenessof such information and shall have no liability for theconsequences of use of such information.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms andconditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including thosepertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between informationin this document and such terms and conditions, the latter
will prevail.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time andwithout notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell productsthat is open for acceptance or the grant, conveyance orimplication of any license under any copyrights, patents orother industrial or intellectual property rights.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable foruse in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunctionof an NXP Semiconductors product can reasonably beexpected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at
the customer’s own risk.

Export control ⎯ This document as well as the item(s)described herein may be subject to export control
regulations. Export might require a prior authorization fromnational authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values andCharacteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage tothe device. Limiting values are stress ratings only andoperation of the device at these or any other conditions

2001 Nov 148

NXP Semiconductors

Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes weremade to the content, except for the legal definitions and disclaimers.

Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any licenseunder patent- or other industrial or intellectual property rights.
Printed in The Netherlands

613514/03/pp9

Date of release: 2001 Nov 14

Document order number: 9397 750 08736