Specification EXS8310-B001
Rev: 2.2

EXS8310-B001
High Power SLED
830 nm UNCOOLEDTO-56 Package

Revision:

2.2

Date:

03-02-2009

Confidentiality:

None

Prepared by:

Raffaele Rezzonico(Product Support Technician)Checked by:

Chris Armistead(Engineering Manager)

Approved by:Philippe Crépellière(Quality Manager)

Authorized by:

Marcus Duelk(CTO)

Page 1 of 8

Specification EXS8310-B001
Rev: 2.2

Page 2 of 8

CONTENTS
1.

SCOPE ........................................................................................................................ 3
1.1 PURPOSE............................................................................................................................ 3
1.2 RESPONSIBILITY ............................................................................................................. 3

2.

REFERENCE DOCUMENT......................................................................................... 33.

ELECTRO-OPTICAL PERFORMANCE (TSLED = 25°°C) ............................................. 3

4.

ABSOLUTE MAXIMUM RATINGS ............................................................................. 45.

SCREENING (EXS8310-B001) ................................................................................... 4

6.

PACKAGE DIMENSIONS [mm] ................................................................................. 5
6.1

DETAILED DIMENSIONS [mm] .................................................................................. 5

7.

IMPORTANT NOTES .................................................................................................. 7

8.

ORDERING INFORMATION ....................................................................................... 79.

REVISION HISTORY .................................................................................................. 8

Specification EXS8310-B001
Rev: 2.2Page 3 of 8

1. SCOPE
1.1 PURPOSE
The purpose of this document is to specify the electro-optical performance and dimensions ofsuperluminescent light emitting diode (SLED) TO-56.
1.2 RESPONSIBILITYEXALOS is responsible for establishing, implementing and maintaining this procedure. The
Quality representative shall ensure that a timely Engineering Change Notice (ECN) is issued inaccordance with EXALOS procedure for any changes.

2. REFERENCE DOCUMENT•••EXS-WI-0001 Visual Inspection Criteria SLED Chip on Submount Procedure
MIL STD 883 C method.
Bellcore GR-468-CORE

3. ELECTRO-OPTICAL PERFORMANCE (TSLED = 25°°C)
Parameter
Operating Current
Power ex-facet
Center Wavelength*
Bandwidth FWHM*
Spectral ripple [RB=0.1 nm]
Monitor Diode Current
Vertical Far Field Angle
FWHM
Horizontal Far Field Angle
FWHM

SymbolIFPoλcMin0580020IMPD*Typ7820
250.21300†
4020Max1008400.4UnitmAmWnmnmdBµA
degreesdegreesSpectral verification is performed by sampling at the manufacturing batch level. Manufacturing batches are defined by
epitaxial wafer growth run.
†Measurement conditions:- IF = IF Max- Monitor PD bias voltage: 0 Volts
Input resistance of the Monitor PD current measurement circuit ~ 6 Ohm

Specification EXS8310-B001
Rev: 2.2Page 4 of 8

4. ABSOLUTE MAXIMUM RATINGS
Stresses beyond the absolute maximum ratings may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ParameterSymbol

Reverse voltage

VR

Forward voltage

VFStorage temperature
Operating temperature

TstgCond.

MinMaxUnit-2V-40

2.5
85V°C

-2065°C

260°C

500

V-2VIF,max

TopIF,max

Lead soldering temperature
ESD

human b.mMonitor diode reverse bias voltage

VBias

05. SCREENING (EXS8310-B001)
The produced 830nm SLED Module is required to meet all operating conditions specified in Table
4.1, Electro-Optical Performance Specifications after being subjected to the following screening
tests.
Test Item

Test Conditions

ReferenceSample

Hermetic SealFine leak :-8Max. leak rate 5x10 atm.cc/sec
Gross leak :MIL-STD-883, Method 1014
Condition A
MIL-STD-883, Method 1014
Condition C

100 %Temperature Cycling-40°C to +85°C, ramp rate >= 5° C/min
20 cycles

MIL-STD-883, Method 1010

100%

Burn-in

60 hours at 50°C – 120mA
Delta P nominal < 20%

100 %

100%

Specification EXS8310-B001
Rev: 2.2

Page 5 of 8

6. PACKAGE DIMENSIONS [mm]Tolerances:

See section 6.1

2.10
1.20

Pin 2
0.45

Pin 3

Pin 1

5.60

2.10

Pin 4

3.55

TO-56 Package

Rear ViewTO-CAN
Pin Function
1MONITOR DIODE ANODE

2SLED (-), CASE, MONITOR DIODE CATHODE

3SLED (+)

4NC

Attention
Prior to connecting the SLED module to the driver using constant power mode, make sure thatyour SLED driver supports the so-called ″Common laser cathode/photodiode cathode″″arrangement and the connections are set accordingly. If this is not the case do not connect theSLED, otherwise it may result in permanent damage to the SLED.

Specification EXS8310-B001
Rev: 2.2Page 6 of 8

6.1 DETAILED DIMENSIONS [mm]MIN

Side View Cross-sectionReference PlaneTop View

CAP FLANGE EDGECAP SURFACECAP WINDOWCHIP POSITIONEMISSION SPOT

Specification EXS8310-B001
Rev: 2.2Page 7 of 8

7. IMPORTANT NOTES
1. Avoid electrostatic discharges, which may destroy the SLED.
2. Never use the TO-CAN die without heat sinking.
3. Adequate eye protection against laser radiation should be used while handling and operating themodule.
4. EXALOS declines any responsibility if the device is used in applications where human life maybe endangered.
5. Back reflections may influence the output power and spectral characteristics of the SLED. Theuse of optical isolators and/or angled connectors is recommended. Back reflections of less than-30dB are recommended.

8. ORDERING INFORMATION
Please use the following code system to order products from EXALOS:

SLED EXS8310-B001 Product coding:

EX

S

831

Wavelength

CodeWavelength83830 nm0B

Power ex-facet [mW]10

≥ 5 mW01

Package Fiber Connector Option

Power & Bandwidth

Code0

CodePackage

CodeFiber

CodeConnector

CodeOption

B

TO-560No Fiber0No Connector

1Monitor DiodeSpecification EXS8310-B001
Rev: 2.2

Page 8 of 8

9. REVISION HISTORY
Revision History
Rev.

Description

ECN Number

Date (ECN)

Released

1.0

Original version--23.08.04

2.0

Add additional drawings of mechanical dimensions ofpackage, add monitor diode specification and conditions, add
typical far field angle

EXS-EC-0159

29.08.05

29.08.05

2.1

Minor format changes

EXS-EC-0245

08.08.07

08.08.07

2.2

Spectral verification performed by epitaxial wafer growth run,Change burn-in at 120mA, 50°C instead of ( 70°C, 1 00mA)

EXS-EC-0315

03.02.09

03.02.09