Datasheet
D35-SWDM-Cxx

High Speed 840-960 nm

Photodetector up to 112 Gbit/s
Product Code:

D35-SWDM-C1

1x1

D35-SWDM-C4

4x1
Engineering Samples
Sample image only. Actual product may vary.

Product Description

High-speed 840-960 nm top-illuminated InP-based pin photodetector chip for data rates of up to 112
Gbit/s PAM-4 for application in the next-generation data communication systems. Thesephotodetectors are available as single chip or as 4-channel chip array with a 250 µm pitch, allowingalignment to multi-mode fibers. The chips can be wire bonded.
Active area: 25µm diameter, ~490 µm2Features

Applications· High temperature stability· Active Optical Cables· Chip-to-Chip Interconnects· Single chip or 4-channel chip array· Up to 112 Gbit/s PAM4 per channel· SWDM Optical Interconnects

Parameter

TypicalOperating Wavelength

840 - 960 nm

Data Rate
Responsivity

up 112 Gbit/s per channel
min 0.5 A/W

PAM-4
at 850 nm

Small signal -3dBo bandwidth> 30 GHztyp.

All product specifications and descriptions are subject to change without noticeNo. 221728-Rev 1.0 25V1BNotes

VI Systems GmbH Hardenbergstrasse 7 D-10623 Berlin
May 2022

Datasheet
D35-SWDM-Cxx

Electro-Optical Specifications (T = 0 to 85°C)
Parameter

SymbolCondition

Dark current

IdVBias = -2.5 V-2.5V50Ω load

S21 3 dBo Bandwidth
Operating wavelength
Responsivity

BWf3dBMin
30

TypMax

Unit

4nA35

840
960
850 nm0.50
0.50
R880 nm
0.50
0.52
R910 nm0.50
0.54
R940 nm0.50
0.56
R1310 nm*
0.70
0.75
R
1550 nm*
0.70
0.75
R
CapacitanceCSeries resistanceRs*anti-reflection coating is optimized for <1% reflectivity within the range 840 nm - 960 nm

GHznm
A/W
A/W
A/W
A/W
A/W
A/W
pF
Ohm

S21 and S11 measurements can be supplied upon request

All product specifications and descriptions are subject to change without noticeNo. 221728-Rev 1.0 25V1B

VI Systems GmbH Hardenbergstrasse 7 D-10623 Berlin
May 2022

Datasheet
D35-SWDM-Cxx

Absolute Maximum Ratings
Parameter

Operating temperature
Storage temperature
Soldering temperature
Forward current
Reverse Voltage
HBM ESD Threshold

SymbolCondition

TopTstTslIFWVR
VESDMinTyp0-4010 sec

MaxUnit8585260
101090°C°C°CmAVVStress in excess of any of the individual Absolute Maximum Ratings can cause immediate irreversible
damage to the component even if all other parameters are within the electro-optical specifications.
Exposure to any of the Absolute Maximum Ratings for extended periods can adversely affect thereliability of these chips.
Mechanical Dimensions
Parameter
LengthTypeMinDxx-BROAD-C1
Dxx-BROAD-C4

HeightWidthTypMax

Unit

250
1000
150
250

260
1040

µmµmµm260

Dimensions of D35-SWDM-C1

Contact shape
Active area: 25µm diameter, ~490 µm2

All product specifications and descriptions are subject to change without noticeNo. 221728-Rev 1.0 25V1B

VI Systems GmbH Hardenbergstrasse 7 D-10623 Berlin
May 2022

Datasheet
D35-SWDM-Cxx

Dimensions of D35-SWDM-C4

Qualification Notification
The D35-SWDM-Cxx chips have been tested to meet the specifications outlined in this datasheet. A reliability
assessment report is available as a separate document upon request.

VI Systems GmbH
Hardenbergstrasse 710623 Berlin
Tel.: +49 30 3083143 30
Fax: +49 30 3083143 59
sales@v-i-systems.com
www.v-i-systems.com

www.v-i-systems.com
All product specifications and descriptions are subject to change without noticeNo. 221728-Rev 1.0 25V1B

VI Systems GmbH Hardenbergstrasse 7 D-10623 BerlinMay 2022