Single N-channel MOSFET
ELM4N6006FDA-N

http://www.elm-tech.com■General description■Features

ELM4N6006FDA-N uses advanced trench technology
to provide excellent Rds(on), low gate charge and lowgate threshold voltage.

• Vds=60V• Id=35A (Vgs=10V)• Rds(on) = 20mΩ (Vgs=10V)• Rds(on) = 24mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter

Symbol

Limit

Unit

Drain-source voltage

Vds

60

V

Gate-source voltage

Vgs±2035.0

V

Tc=25°C
Tc=100°C
Ta=25°C

Continuous drain current (Vgs=10V)

22.07.4

Id

Ta=70°C
Pulsed drain current
Single pulsed avalanche energy
Avalanche current
Tc=25°C

Power dissipation

Ta=25°C

Junction and storage temperature range

NoteA

1236.0
Idm
Eas

80
39.2

AmJ

Ias

28
45

A

Pd

W

24

Tj, Tstg-55 to +150°C

SymbolRθjaRθjc

Typ.
-Unit

Note°C/W

1■Thermal characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case■Pin configuration

Max.
62.0
2.8

■Circuit
DTO-252(TOP VIEW)
Pin No.

Pin name

123GATEDRAIN
SOURCE

GS2

Rev.1.0
1/4

Single N-channel MOSFET
ELM4N6006FDA-N

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Vgs=0V, Id=250μA

60--V

Zero gate voltage drain current

Idss

--

15μA

1.2-

±100
2.5nA
V

Vgs=10V, Id=20A

-

-

20

Vgs=4.5V, Id=10A
Vds=5V, Id=15A

-

45

24-

Vgs=0V, Is=1A--

13580VAAVds=15V, Vgs=0V, f=1MHz-

2423
145-

pF
pF

Vds=0V, Vgs=0V, f=1MHz-

97
1.7

-

pF
Ω-

19.3

-nC

Vds=48V, Vgs=0V
Vds=48V, Vgs=0V, Tj=55°C

Gate-body leakage current
Gate threshold voltage

Igss Vgs=±20V, Vds=0V
Vgs(th) Vds=Vgs, Id=250μA

Static drain-source on-resistanceRds(on)mΩForward transconductance

Gfs

Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS

VsdIsIsm

Input capacitance
Output capacitance

CissCoss

Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (4.5V)

CrssRgGate-source charge
Gate-drain charge

Qgs
Qgd

Vds=48V, Vgs=4.5V, Id=15A

-

7.1
7.6

-

nCnC

Turn-on delay timetd(on)
trVds=30V, Vgs=10V, Id=15A

-

7.2
50.0-

nsns

td(off) Rgen=3.3Ω
tf
trr
If=15A, di/dt=100A/μs
Qrr

-

36.4
7.6
16.3

-

nsnsns-11.0-nC

Turn-on rise timeTurn-off delay timeTurn-off fall time
Reverse recovery time
Reverse recovery charge

Vgs=Vds=0V, Force current

Qg

2S21, 52, 5NOTE :1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The Eas data shows Max. rating . The test condition is Vds=25V, Vgs=10V, L=0.1mH, Ias=28A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.02/4

Single N-channel MOSFET
FETek Technology Corp.

FKD6006

ELM4N6006FDA-N

N-Ch 60V Fast Switching
MOSFETs
http://www.elm-tech.com■Typical characteristics

Typical Characteristics
20ID=12ARDSON (mΩ)

1918

171615
4

6

VGS (V)

810Fig.2 On-Resistance v.s Gate-Source

Fig.1 Typical Output Characteristics
12

IS Source Current(A)1086

TJ=150℃

TJ=25℃

4200.2

0.4

0.6

0.8

VSD , Source-to-Drain Voltage (V)1Fig.3 Forward Characteristics of Reverse

Fig.4 Gate-Charge Characteristics
2.0

Normalized On Resistance

Normalized VGS(th)

1.5

1.5

11.00.5

0.50-50050100

TJ ,Junction Temperature ( ℃)

-50150Fig.5 Normalized VGS(th) v.s TJ

050100

TJ , Junction Temperature (℃)

150

Fig.6 Normalized RDSON v.s TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3

Rev.1.0
3/4

Single N-channel MOSFET
ELM4N6006FDA-N
FETek Technology Corp.

N-Ch 60V Fast Switching MOSFETs

10000

Capacitance (pF)

FKD6006

http://www.elm-tech.com

F=1.0MHzCiss

1000Coss100Crss101591317

VDS Drain to Source Voltage(V)2125

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (RθJC)

1

DUTY=0.5
0.3
0.1
0.1

0.05
0.02

PDM

0.01

TON

D = TON/T

SINGLE PULSE

0.01
0.00001

T

TJpeak = TC + PDM x RθJC

0.0001

0.001

0.01

0.1

1t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=VDS
90%

BVDSS

Td(on)Tr
Ton

Td(off)BVDSS
BVDSS-VDD

VDD

IAS

10%
VGS

1L x IAS2 x
2Tf

VGS

ToffFig.11 Unclamped Inductive Switching Waveform

Fig.10 Switching Time Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A4

Rev.1.0
4/4