Single N-channel MOSFET
ELM4N6032FDA-N

http://www.elm-tech.com■General description■Features

ELM4N6032FDA-N uses advanced trench technology
to provide excellent Rds(on), low gate charge and lowgate threshold voltage.

• Vds=60V• Id=75A (Vgs=10V)• Rds(on) = 8.5mΩ (Vgs=10V)• Rds(on) = 12.0mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter

Symbol

Limit

Unit

Drain-source voltage

Vds

60

V

Gate-source voltage

Vgs

±2075

V

Tc=25°C

Continuous drain current (Vgs=10V)

Id

Tc=100°C

NoteA1A

2

Pulsed drain current
Single pulsed avalanche energy

Idm

47280

Eas80mJ

3

Avalanche current

IasPd40
41AW

4Tstg
Tj

-55 to +150-55 to +150°C°C

Unit

Note°C/W

1

Power dissipation

Tc=25°C

Storage temperature range
Operating junction temperature range■Thermal characteristics
Parameter
Thermal resistance junction-to-ambient

Symbol
Rθja

Typ.
-Max.
62.0

Thermal resistance junction-to-caseRθjc-1.4■Pin configuration■Circuit
DTO-252(TOP VIEW)
Pin No.

Pin name

12GATEDRAIN

3SOURCEGS2

Rev.1.0
1/4

Single N-channel MOSFET
ELM4N6032FDA-N

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Vgs=0V, Id=250μA

60--V

Zero gate voltage drain current

Idss

--

15μA

1.2-

±100
2.5nA
V

Vgs=10V, Id=20A

-

7.1

8.5-

9.5-

12.0
1.2---

Vds=48V, Vgs=0V
Vds=48V, Vgs=0V, Tj=55°C

Gate-body leakage currentGate threshold voltage

Igss Vgs=±20V, Vds=0VVgs(th) Vgs=Vds, Id=250μA

Static drain-source on-resistanceRds(on)

mΩ

2V275

A

1, 53307

-

pF

-

201
151
1.2-

pF
pF
Ω-

57.0
8.7

-

nCnC

-

14.0-

nC

td(on)
trVds=30V, Vgs=10V-

16.2
41.2

-

ns
ns

Turn-off fall timetd(off) Rgen=3.3Ω, Id=20Atf-

56.4
16.2

-

nsns

Reverse recovery time
Reverse recovery charge

trrQrr

-

2272-

nSnC

Diode forward voltage

Vsd

Vgs=4.5V, Id=15A
Vgs=0V, Is=1A

Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitanceIsVgs=Vds=0V, Force current

Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Gate-source charge
Gate-drain charge
Turn-on delay timeTurn-on rise timeTurn-off delay time

Ciss
Coss
CrssRgQg
Qgs
Qgd

Vds=30V, Vgs=0V, f=1MHz
Vds=0V, Vgs=0V, f=1MHz
Vds=30V, Vgs=10V
Id=18A

If=20A, di/dt=100A/μs

NOTE :
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The Eas data shows Max. rating . The test condition is Vds=50V, Vgs=10V, L=0.1mH, Ias=40A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.02/4

Single N-channel MOSFET
FETek Technology Corp.

FKD6032

ELM4N6032FDA-N
N-Ch 60V Fast Switching MOSFETs

http://www.elm-tech.com■TypicalTypicalcharacteristics
Characteristics

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs Gate-Source Voltage

Fig.3 Forward Characteristics of Reverse

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs TJ

Fig.6 Normalized RDSON vs TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3Rev.1.0
3/4

Single N-channel MOSFET
ELM4N6032FDA-N

FKD6032
http://www.elm-tech.com

N-Ch 60V Fast Switching MOSFETs

FETek Technology Corp.

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (RθJC)

1
DUTY=0.5
0.2

0.1

0.1
0.05
0.02
0.01

0.01

PDM

SINGLET ONT

D = TON/T
TJpeak = TC+P DMXRθJC

0.001
0.00001

0.0001

0.001

0.01

1

0.1

10t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=VDS
90%

BVDSS

Td(on)Tr
Ton

Td(off)BVDSS
BVDSS-VDD

VDD

IAS

10%
VGS

1
L x IAS2 x2Tf

VGSToff

Fig.11 Unclamped Inductive Switching Waveform

Fig.10 Switching Time Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

4

Rev.1.0
4/4