Single N-channel MOSFET
ELM4N6014FDA-N

http://www.elm-tech.com■General description■Features

ELM4N6014FDA-N uses advanced trench technology
to provide excellent Rds(on), low gate charge andlow gate threshold voltage.

• Vds=60V• Id=20A• Rds(on) = 40mΩ (Vgs=10V)• Rds(on) = 50mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter
Drain-source voltage

Tc=25°C. Unless otherwise noted.
Limit
Unit
Note60VSymbolVds

Gate-source voltage

Vgs±202013VA

1Idm40A

2PdTstg

31.3-55 to 150

W°C

3

Tj

-55 to 150°C

Tc=25°C
Tc=70°C

Continuous drain current
Pulsed drain current
Power dissipation
Storage temperature range

Tc=25°C

Operating junction temperature range

Id■Thermal characteristics
Parameter
Thermal resistance junction-to-caseSymbol
Rθjc

Typ.
-Max.
4

Unit°C/W

Note
1

Thermal resistance junction-to-ambientRθja-62°C/W

1■Pin configuration■Circuit
DTO-252(TOP VIEW)
Pin No.
1

Pin name
GATE

2
3

DRAIN
SOURCE

GS

Rev.1.1
1/4

Single N-channel MOSFET
ELM4N6014FDA-N

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V
Vds=48V, Vgs=0V
Idss
Vds=48V, Vgs=0V, Ta=55°C

60--1--5

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

1.0-±100
2.5

Static drain-source on-resistanceRds(on)Vgs=10V, Id=15A-3340

Vgs=4.5V, Id=7A
Vds=5V, Id=15A-4025.3

50-

Is=1A, Vgs=0V--

1.2
2040V
A
A-

1027-

pF

Vds=0V, Vgs=0V, f=1MHz-

6546
2.5-

pF
pF
Ω19.0
2.5-nCnC

Drain-source leakage current

Forward transconductance

Gfs

Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS

Vsd
IsIsm

Input capacitance

Ciss

Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)

CossCrssRg

Vgs=Vds=0V, Force current

Vgs=0V, Vds=15V, f=1MHzVμAnA
VmΩS

Gate-source charge

Qg
Qgs

Vgs=10V, Vds=48V, Id=15A-Gate-drain charge
Turn-on delay timeTurn-on rise time

Qgd
td(on)
trVgs=10V, Vds=30V, Id=15A

-

5.0
2.8
16.6

-

nC
ns
ns

Turn-off delay timetd(off) Rgen=3.3Ω
tf
trr
If=15A, di/dt=100A/μs
Qrr

-

21.2
5.6
12.2

-

nsnsns-7.3-nC

Turn-off fall time
Reverse recovery time
Reverse recovery charge

2212

NOTE :
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The power dissipation is limited by 150°C junction temperature.
4. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.1
2/4

Single N-channel MOSFETFKD6014

ELM4N6014FDA-N

N-Ch 60V Fast Switching
MOSFETs
http://www.elm-tech.com

FETek Technology Corp.

■Typical characteristics

Typical Characteristics
60ID=12ARDSON (mΩ)

534538302Fig.1 Typical Output Characteristics

468VGS (V)

10Fig.2 On-Resistance vs. Gate-Source

10IS -Source Current(A)86

TJ=150℃

4TJ=25℃

2000.30.6

VSD , Source-to-Drain Voltage (V)0.9

Fig.3 Forward Characteristics Of Reverse

Fig.4 Gate-Charge Characteristics
2.2

Normalized On Resistance

1.8

1.8

Normalized VGS(th)

1.4

1.4

1

1.0

0.6

0.6

0.2

0.2
-50050100

TJ ,Junction Temperature (℃)-50150050100

TJ , Junction Temperature (℃)

150Fig.6 Normalized RDSON vs. TJ

Fig.5 Normalized VGS(th) vs. TJ
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3Rev.1.1
3/4

FKD6014

Single N-channel MOSFET

N-Ch 60V Fast Switching MOSFETs
ELM4N6014FDA-N

FETek Technology Corp.

Capacitance(pF)

10000

http://www.elm-tech.com

100.00F=1.0MHz

10.00

Ciss

ID (A)

1000

100

Coss10us
1ms
10ms
100ms
DC

1.00

0.10

TC=25℃
Single Pulse

Crss
0.01

10
15913

17VDS Drain to Source Voltage(V)210.125Fig.7 Capacitance

110100VDS (V)1000

Fig.8 Safe Operating Area

Normalized Thermal Response (RθJC)

1

DUTY=0.5
0.2
0.1

0.01

0.1
0.05
0.02
0.01
PDM

SINGLET ON
T

D = TON/T
TJpeak = TC+P DMXRθJC

0.001
0.00001

0.0001

0.001

0.01

0.1

1t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=

VDS
90%

BVDSS

Td(on)Tr
Ton

Td(off)BVDSS
BVDSS-VDD
VDD

IAS

10%
VGS

1L x IAS2 x
2Tf

VGS

Toff

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Switching Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

4

Rev.1.1
4/4