ELM2SD1005RAA NPN Epitaxial planar transistor
http://www.elm-tech.com■General description

ELM2SD1005RAA is designed for using in driver stage of AF amplifier and general purpose switchingapplication.

■Features• Low Vce(sat)• Good current gain linearity• High Vceo
: 80V
• High Ic(DC): 1A• Package: SOT-89■Maximum absolute ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)Collector current (Pulse)

SymbolVcbo
VceoVeboIcIcp

Power dissipation

PdThermal resistance, junction to ambientRθjaJunction temperature
Storage temperature range

TjTstgNote : 1. Single Pulse Pw≤350μs, Duty≤2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on ceramic with area measuring 40×40×1 mm.

Limit
100
80
5
12 (Note 1)
0.6
1 (Note 2)
2 (Note 3)
208
125 (Note 2)
62.5 (Note 3)
150-55 to +150

Unit
VAW°C/W°C°C■Selection guide
ELM2SD1005RAA-S
Symbolabcde

Product nameClassification Of hFE
Package
Product version
Taping direction

ELM2SD1005
R : 180 to 390 RangeA : SOT-89
A
S: Please refer to page 5

ELM2SD1005 R A A - S↑↑ ↑ ↑ ↑ab c d e

Rev.1.1
1/ 5

ELM2SD1005RAA NPN Epitaxial planar transistor
http://www.elm-tech.com■Pin configuration■Standard circuit

SOT-89(TOP VIEW)

ELM2SD1005RAA

Pin No.
123

Pin nameBCE

Pin description
BaseCollector
Emitter■Electrical characteristics
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
* Vce(sat)* Hfeft
Cob

Condition
Ic=50μA, Ie=0
Ic=1mA, Ib=0
Ie=50μA, Ic=0
Vcb=80V, Ie=0
Veb=4V, Ic=0Ic=500mA, Ib=20mA
Vce=3V, Ic=100mA
Vce=10V, Ic=50mA, f=100MHz
Vcb=10V, f=1MHz

Min.
10080
5120-Typ.
100
20Max.
110.3
390-

Top=25°C
Unit
VVVμA
μA
VMHzpF* Pulse test: Pulse width ≤ 380μs, duty cycle ≤ 2%.

■Classification Of hFE
RankRange

R180~390■Marking
SOT-89Mark
DFa, b, cContent
Product code
Assembly lot number■Shipping• 1000 pcs / Tape & Reel

Rev.1.1
2/ 5

ELM2SD1005RAA NPN Epitaxial planar transistor
http://www.elm-tech.com■Typical characteristics���������������������������������������������������������������������������������������������������������

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Rev.1.1
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ELM2SD1005RAA NPN Epitaxial planar transistor
http://www.elm-tech.com■SOT-89 dimension

A213HCDB

FEI

G

DIM
DIM

InchesInches
Min.
Max.
Min.
Max.
0.17320.18110.17320.18110.15510.1551 0.1673
0.16730.0610 REF
0.0610 REF
0.0906 0.1024
0.09060.10240.0126 0.0205
0.01260.0205

Millimeters
Millimeters
Min.
Max.
Min.
Max.
4.40
4.60
4.40
4.60
3.94
4.25
3.94
4.25
1.55 REF
1.55 REF
2.30
2.60
2.30
2.60
0.32
0.52
0.32
0.52

DIM
DIM

InchesInches
Min.
Max.
Min.
Max.
0.0591TYP
0.0591 TYP
0.11810.1181 TYP
TYP
0.0551 0.0630
0.0551
0.06300.0138 0.0173
0.01380.0173*:*:Typical
TypicalMillimeters
Millimeters
Min.
Max.
Min.
Max.
1.50
TYP
1.50 TYP
3.00
3.00 TYP
TYP
1.40
1.60
1.40
1.60
0.35
0.44
0.35
0.44

A
FF
ABGBGCHCHDIDIEE
Notes: 1.Controlling dimension: millimeters.
2.Maximum
leadthickness: includes
lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
Controllingdimension
millimeters.
Notes : 1.

2. Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
Material:

Material: tin plated.
• Lead: Pure

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

• Lead : Pure tin plated.

• Mold Compound : Epoxy resin family, flammability solid burning class : UL94V-0.

Rev.1.14/ 5

ELM2SD1005RAA NPN Epitaxial planar transistor
http://www.elm-tech.com■Reel & carrier tape dimension• Reel• Carrier tapeNotes:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1mm in 100mm.
3. Material : conductive Black Advantek Polystyrene.
4. Ao & Bo measured on a plane 0.3mm above the bottom of the pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier.
6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.

Unit : millimeter

Rev.1.1
5/ 5