Single N-channel MOSFET
ELM4N6002FDA-N

http://www.elm-tech.com■General description■Features

ELM4N6002FDA-N uses advanced trench technology toprovide excellent Rds(on), low gate charge and low gate
threshold voltage.

• Vds=60V• Id=17A (Vgs=10V)• Rds(on) = 75mΩ (Vgs=10V)• Rds(on) = 90mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter

Symbol

Limit

Unit

Drain-source voltage

Vds

60

V

Gate-source voltage
Continuous drain current

Vgs±2017V

Tc=25°C(Vgs=10V)
Pulsed drain current
Single pulsed avalanche energy

Id

Tc=100°C

Avalanche current
Power dissipation

Tc=25°C

Storage temperature range
Operating junction temperature range

NoteA

1A

2Idm

1250

Eas

11mJ

3Ias
Pd

1542AW

4Tstg
Tj-55 to +150
-55 to +150°C°C■Thermal characteristics
Parameter
Thermal resistance junction-to-ambient

Symbol
Rθja

Typ.
-Max.
62

Unit°C/W

Note
1

Thermal resistance junction-to-caseRθjc-3°C/W

1■Pin configuration■Circuit
DTO-252(TOP VIEW)
Pin No.

Pin name

123GATEDRAIN
SOURCEGS2

Rev.1.0
1/4

Single N-channel MOSFET
ELM4N6002FDA-N

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

60

--

V

Zero gate voltage drain current

Idss

--

15μA

1.2-

±100
2.5nA
V

Vgs=10V, Id=5A

-

-

75

Vgs=4.5V, Id=5A
Vds=5V, Id=5A

-

790-

Vgs=0V, Is=1A--

1.21750VAA-695
148-pFpF

Vds=48V, Vgs=0V
Vds=48V, Vgs=0V, Tj=55°C

Gate-body leakage current
Gate threshold voltage

Igss Vgs=±20V, Vds=0V
Vgs(th) Vds=Vgs, Id=250μA

Static drain-source on-resistanceRds(on)mΩForward transconductance

Gfs

Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS

VsdIs
Ism

Input capacitance
Output capacitance

Ciss
Coss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge (10V)

Crss-7-pF

Qg-5.5-nC

Gate-source chargeQgs-

1.8-

nC

Gate-drain charge
Turn-on delay time

Qgdtd(on)-2.46-nCns

Turn-on rise timetr
Vds=12V, Vgs=10V, Id=5A
td(off) Rgen=3.3Ω

-

1015-

nsns-

7-

ns

Turn-off delay timeTurn-off fall time

Vgs=Vds=0V, Force current

Vds=15V, Vgs=0V, f=1MHz

Vds=12V, Vgs=10V, Id=5Atf

2S21, 52, 5NOTE :1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The Eas data shows Max. rating . The test condition is Vdd=25V, Vgs=10V, L=0.1mH, Ias=15A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.02/4

Single N-channel MOSFET
ELM4N6002FDA-N

FKD6002

http://www.elm-tech.com
N-Ch 60V Fast Switching
MOSFETs

FETek Technology Corp.

■Typical characteristics

Typical Characteristics

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs. Gate-Source Voltage

Fig.3 Forward Characteristics of Reverse

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ

Fig.6 Normalized RDSON vs. TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3

Rev.1.0
3/4

Single N-channel MOSFET
FETek Technology Corp.

FKD6002

ELM4N6002FDA-N

http://www.elm-tech.com
N-Ch 60V Fast Switching
MOSFETs

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (RθJC)

1

DUTY=0.5
0.2
0.10.01

0.1
0.05
0.02
0.01
PDM

SINGLET ON
T

D = TON/T
TJpeak = TC+P DMXRθJC

0.001
0.00001

0.0001

0.001

0.01

10.1t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=VDS
90%

BVDSS

Td(on)Tr
Ton

Td(off)BVDSS
BVDSS-VDD

VDD

IAS

10%
VGS

1L x IAS2 x
2Tf

VGS

Toff

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Switching Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

4

Rev.1.04/4