Single N-channel MOSFET
ELM4N6014FUA-S

http://www.elm-tech.com■General description■Features

ELM4N6014FUA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and lowgate threshold voltage.

• Vds=60V• Id=5A (Vgs=10V)• Rds(on) = 50mΩ (Vgs=10V)• Rds(on) = 60mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage

SymbolVds
Vgs
Ta=25°C
Ta=70°C

Limit
60±20Unit
VVNoteA1A

2Pulsed drain current
Single pulsed avalanche energy

Idm

5.0
3.5
30

Eas

22mJ

3

Avalanche current

IasPd21
2.7

AW

4Tstg
Tj

-55 to 150-55 to 150°C°C

Continuous drain current(Vgs=10V)

Power dissipation

Ta=25°C

Storage temperature range
Operating junction temperature range

Id■Thermal characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-caseSymbol

Typ.

Max.

Unit

Note

Rθja
Rθjc

-85
45°C/W°C/W

11■Pin configuration■Circuit

SOT-223(TOP VIEW)
212

DPin No.
12

Pin name
GATEDRAIN3SOURCE

3GS

Rev.1.0
1/4

Single N-channel MOSFET
ELM4N6014FUA-S

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V
Vds=48V, Vgs=0V
Idss
Vds=48V, Vgs=0V, Tj=55°C

60--1--5

Gate-body leakage current
Gate threshold voltage

Igss Vgs=±20V, Vds=0VVgs(th) Vgs=Vds, Id=250μA

1.0-±100
2.5

Static drain-source on-resistanceRds(on)Vgs=10V, Id=4A--50-

28.3

60-

Drain-source leakage current

VμAnAVmΩ

Forward transconductance

Gfs

Vgs=4.5V, Id=2A
Vds=5V, Id=4A

Max. body-diode continuous current
Diode forward voltage
DYNAMIC PARAMETERS

Is
Vsd

Vgs=Vds=0V, Force current
Vgs=0V, Is=1A

--

5
1.2

A
V

Input capacitance
Output capacitance

Ciss
Coss

Vds=15V, Vgs=0V, f=1MHz-1027
65-

pF
pF

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge (10V)

Crss-46-pFQg-

19.0-

nC

Gate-source charge

Qgs

-

2.6-

nC

Gate-drain charge
Turn-on delay timeTurn-on rise time

Qgdtd(on)

-

4.13-

nCns

Turn-off delay timeTurn-off fall timetr
Vds=30V, Vgs=10V
td(off) Rgen=3.3Ω, Id=4Atf-

34
236-

ns
ns
ns

Reverse recovery time
Reverse recovery charge

trr
Qrr

-

12.1
6.7-

nS
nC

Vds=48V, Vgs=10V, Id=4A

If=4A, di/dt=100A/μs

2S
1, 52

NOTE :
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The Eas data shows Max. rating . The test condition is Vdd=25V, Vgs=10V, L=0.1mH, Ias=21A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.02/4

Single N-channel MOSFETFKL6014

ELM4N6014FUA-S

http://www.elm-tech.com
N-Ch 60V Fast Switching MOSFETsFETek Technology Corp.

■Typical characteristics
Typical Characteristics

60

20

ID=4A

VGS=10V
VGS=7V
VGS=5VID Drain Current (A)

1553

RDSON (mΩ)

VGS=4.5V

45

10

VGS=3V

38

530

000.5

11.5

2

VDS , Drain-to-Source Voltage (V)22.5

Fig.1 Typical Output Characteristics

46VGS (V)810

Fig.2 On-Resistance vs. G-S Voltage

10

IS -Source Current(A)86

TJ=150℃

4TJ=25℃

2000.30.6

VSD , Source-to-Drain Voltage (V)0.9

Fig.3 Source Drain Forward Characteristics

Fig.4 Gate-Charge Characteristics

1.8

Normalized VGS(th)

1.4

10.6

0.2-50050100

TJ ,Junction Temperature (℃)

150

Fig.5 Normalized VGS(th) vs. TJ

Fig.6 Normalized RDSON vs. TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3

Rev.1.0
3/4

Single N-channel MOSFETFKL6014

ELM4N6014FUA-S

http://www.elm-tech.com
N-Ch 60V Fast Switching MOSFETs

FETek Technology Corp.

Capacitance(pF)

10000

F=1.0MHz
Ciss

1000

100

CossCrss101591317VDS Drain to Source Voltage(V)2125

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (RθJA)

1

DUTY=0.5
0.2
0.1

0.1
0.05
0.01

PDM

0.01

T ON
T

D = TON/T

SINGLE

TJpeak = TC+PDMXRθJC

0.001
0.0001

0.001

0.01

0.1

1

10100

1000t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=VDS
90%

BVDSS

Td(on)Tr
Ton

Td(off)BVDSS
BVDSS-VDD

VDD

IAS

10%
VGS

1L x IAS2 x2Tf

VGSToff

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Switching Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A4

Rev.1.0
4/4