Single N-channel MOSFET
ELM4NA6074FNA-N

http://www.elm-tech.com■General description■Features

ELM4NA6074FNA-N uses advanced trench technology
to provide excellent Rds(on), low gate charge and lowgate resistance.

• Vds=60V• Id=100A• Rds(on) = 2.1mΩ (Vgs=10V)• Rds(on) = 3.2mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Tc=25°C

Continuous drain current

Tc=100°C

Pulsed drain current
Single pulse avalanche energy

SymbolLimitUnitVdsVgs

60±20100VVId

66

Note

A

1, 6

Idm

400

A

230635mJA

3Avalanche current

EasIasPower dissipation (Tc=25°C )Operating junction temperature
Storage temperature range

PdTjTstg

83- 55 to 150- 55 to 150

W°C°C

4

■Thermal characteristics
Parameter

Symbol

Typ.

Max.

Unit

NoteRθja
Rθjc

-55.0
1.1°C/W

11

Thermal resistance junction-to-ambient
Maximum junction-to-case■Pin configuration■CircuitD

PRPAK8-5×6(TOP VIEW)(BOTTOM VIEW)

Pin No.
1

Pin name
SOURCE

23SOURCE
SOURCE

45GATEDRAIN

678DRAIN
DRAIN
DRAIN

GS

Rev.1.0
1/4

Single N-channel MOSFET
ELM4NA6074FNA-N

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage BVdss Vgs=0V, Id=250μA
Zero gate voltage drain current

Idss

Gate-body leakage current

Igss

Gate threshold voltage

Vds=52V
Vgs=0V

Tj=55°C
Vgs=±20V, Vds=0V

Vgs(th) Vgs=Vds, Id=250μA

60--V--1--

5±1001.2-

2.3V

μA
nA

Static drain-source on-resistance Rds(on)Vgs=10V, Id=20A
Vgs=4.5V, Id=20A

-

1.7
2.3

2.1
3.2mΩ

2

Forward transconductance
Diode forward voltage

Gfs
Vsd

Vds=5V, Id=20A
Vgs=0V, Is=1A

-60
-

1.2

SV

2

Diode continuous source current
DYNAMIC PARAMETERSIs

Vgs=Vds=0V, Force current

--

100

A

1,5,6

Input capacitanceCiss-5471-pF

Output capacitance
Reverse transfer capacitance

CossCrss

Vds=30V, Vgs=0V, f=1MHz-

1847
86-pFpFGate resistance
SWITCHING PARAMETERS
Total gate charge (Vgs=10V)

Rg

Vds=0V, Vgs=0V, f=1MHz-

1.6-

ΩVds=30V, Vgs=10V-

102.0
54.1-

nCnC

Qgs Id=20A
Qgd
td(on)

-

15.7
27.9
15-

nCnC
nstr
Vds=30V, Vgs=10V
td(off) Rgen=3Ω, Id=20A

-

1260-

nsnstftrr
Qrr-

195072-

nsnsnC

Total gate charge (Vgs=4.5V)
Gate-source charge
Gate-drain charge
Turn-on delay timeTurn-on rise timeTurn-off delay timeTurn-off fall timeReverse recovery time
Reverse recovery charge

Qg
Qg

If=20A, di/dt=100A/μs

Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The EAS data shows Max. rating . The test condition is Vdd=50V, Vgs=10V, L=0.5mH, Ias=35A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.
6. The maximum current rating is package limited.

Rev.1.0
2/4

Single N-channel MOSFET
FETek Technology Corp.

ELM4NA6074FNA-N■Typical electrical and thermal characteristics

FKBA6074

Single N-Channel
MOSFET
http://www.elm-tech.com

Typical Characteristics

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs G-S Voltage

Fig.3 Diode Forward Voltage vs Current

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs TJ

Fig.6 Normalized RDSON vs TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A3Rev.1.03/4

Single N-channel MOSFET
ELM4NA6074FNA-N
FETek Technology Corp.

Fig.7 CapacitanceFKBA6074

http://www.elm-tech.com
Single N-Channel MOSFET

Fig.8 Safe Operating Area

Normalized Thermal Response (RθJC)

1

DUTY=0.5
0.2
0.1

0.1
0.05
0.02
0.01

0.01

PDM

SINGLET ON
T

D = TON/T
TJpeak = TC+P DMXRθJC

0.001
0.00001

0.0001

0.001

0.01

10.1

10t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=VDS
90%BVDSS

Td(on)Tr
Ton

Td(off)BVDSSBVDSS-VDD
VDD

IAS

10%
VGS1
L x IAS2 x
2Tf

VGSToff

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Switching Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

4

Rev.1.0
4/4