Single N-channel MOSFET
ELM4N2510FCA-S

http://www.elm-tech.com■General description■Features

ELM4N2510FCA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and lowgate threshold voltage.

• Vds=20V• Id=6A (Vgs=4.5V)• Rds(on) = 26mΩ (Vgs=4.5V)• Rds(on) = 35mΩ (Vgs=2.5V)• Rds(on) = 50mΩ (Vgs=1.8V)■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage

SymbolLimitUnitVds
Vgs

20±12VV

Ta=25°C

Continuous drain current(Vgs=4.5V)

Ta=70°C

Pulsed drain current

6Id

5Idm
Ta=25°C
Ta=70°C

Power dissipation

171.000.66

PdNoteA

1A

2W

3Storage temperature range

Tstg-55 to 150°C

Operating junction temperature range

Tj-55 to 150°C■Thermal characteristics
Parameter(Thermal resistance) junction-to-ambient

SymbolRθja■Pin configuration

Typ.
-Max.
120

Unit°C/W

Note
1■Circuit
D

SOT-23(TOP VIEW)
Pin No.
12

Pin name
GATESOURCE

3DRAINGS

Rev.1.0
1/4

Single N-channel MOSFET
ELM4N2510FCA-S

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage
Drain-source leakage current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance

BVdss Id=250μA, Vgs=0V
Vds=16V, Vgs=0V
Idss
Vds=16V, Vgs=0V, Tj=55°C

20--1--5Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=250μA

0.45-±100
1.00

Vgs=4.5V, Id=4A-2126

Rds(on) Vgs=2.5V, Id=3A
Vgs=1.8V, Id=2A-

28403550mΩ

2-

30-

1.2
6SVA

21, 4-670-

pF-

7568-

pF
pF

-

8.60-

nC

Vgs=4.5V, Vds=15V, Id=4A-

1.37
2.30-

nC
nC

td(on)
tr
Vgs=4.5V, Vds=10V, Id=4A
td(off) Rgen=3.3Ω

-

5.2
34.0
23.0-

nsnsns-9.2-

ns

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

GfsVsdIs

Input capacitanceCissOutput capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge (4.5V)

CossCrss

Gate-source charge
Gate-drain charge
Turn-on delay time

Qgs
Qgd

Turn-on rise timeTurn-off delay timeTurn-off fall time

Vds=5V, Id=4A
Is=1A, Vgs=0V
Vgs=Vds=0V, Force current

Vgs=0V, Vds=15V, f=1MHzQg

tf

VμAnA
V

NOTE :
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The power dissipation is limited by 150°C junction temperature.
4. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.02/4

Single N-channel MOSFET
FETek Technology Corp.

FKUC2510

ELM4N2510FCA-S

http://www.elm-tech.com
N-Ch 20V Fast Switching
MOSFETs■Typical characteristics
Typical Characteristics

45

18
16

VGS=4.5V

1440

VGS=3V12

VGS=2.5V

RDSON (mΩ)

ID Drain Current (A)

ID=4A

VGS=5V

35

10

VGS=1.8V

830

6425

220000.5

11.5

VDS , Drain-to-Source Voltage (V)12Fig.1 Typical Output Characteristics

35VGS (V)7911Fig.2 On-Resistance vs. Gate-Source

IS Source Current(A)64

TJ=175℃

TJ=25℃

2000.30.6

0.9

VSD , Source-to-Drain Voltage (V)1.2Fig.3 Forward Characteristics Of Reverse

Fig.4 Gate-Charge Characteristics

1.8

Normalized VGS(th)

1.4

10.6

0.2
-50

050

100

TJ ,Junction Temperature (℃ )150

Fig.5 Normalized VGS(th) vs. TJ

Fig.6 Normalized RDSON vs. TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3Rev.1.03/4

Single N-channel MOSFETFKUC2510

ELM4N2510FCA-S

http://www.elm-tech.com
N-Ch 20V Fast Switching MOSFETs

FETek Technology Corp.

1000

100.00

100us
10.00

10010ms

ID (A)

Capacitance (pF)

Ciss

Coss

100ms

1.00

1s

Crss
0.10

F=1.0MHz

10147101316

VDS Drain to Source Voltage (V)190.0122

DC

TA=25℃
Single Pulse
0.1

1Fig.7 Capacitance

10VDS (V)

100Fig.8 Safe Operating Area

Normalized Thermal Response (R θJA)

1
DUTY=0.5
0.2
0.1

0.10.050.02

0.01

0.01

0.001

SINGLE PULSE

PDM

TON
T

D = TON/T
TJpeak = TA + PDM x RθJA

0.00010.0001

0.001

0.01

0.1

1101001000

t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
VDS
90%

10%
VGS

Td(on)Tr
Ton

Td(off)TfToffFig.10 Switching Time Waveform

Fig.11 Gate Charge Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A4

Rev.1.0
4/4