Single N-channel MOSFET
ELM4N6014FRA-S

http://www.elm-tech.com■General description■Features

ELM4N6014FRA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and lowgate threshold voltage.

• Vds=60V• Id=5A• Rds(on) = 50mΩ (Vgs=10V)• Rds(on) = 60mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current(Vgs=10V)

SymbolVds
Vgs
Ta=25°C

Limit
60±205.0Id

Ta=70°C

3.5Unit
VVNoteA1

Pulsed drain current
Single pulse avalanche energy

Idm
EAS

2022AmJ

2
3

Avalanche current
Power dissipation
Storage temperature range

IasPdTstg

212-55 to 150

AW°C

4Tj

-55 to 150°C

Ta=25°C

Operating junction temperature range■Thermal characteristics
Parameter
Thermal resistance junction-to-ambient

SymbolRθja■Pin configuration

Typ.
-Max.
62.5

Unit°C/W

Note
1■Circuit
D

SOT-89(TOP VIEW)
Pin No.

Pin name

1
2
3

GATE
DRAIN
SOURCE

GS

Rev.1.1
1/4

Single N-channel MOSFET
ELM4N6014FRA-S

http://www.elm-tech.com■Electrical characteristics
ParameterSymbol

Condition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage
Static drain-source on-resistance
Gate threshold voltage
Drain-source leakage current

BVdss Id=250μA, Vgs=0V
Vgs=10V, Id=4A
Rds(on)Vgs=4.5V, Id=3A60-

4050-

4560

Vgs(th) Vgs=Vds, Id=250μA
Vds=48V, Vgs=0V
Idss
Vds=48V, Vgs=0V, Tj=55°C

1.0--

2.51--5mΩ

μAIgssGfs

Vgs=±20V, Vds=0V
Vds=5V, Id=4A-

Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

VsdIs

Vgs=0V, Is=1A
Vgs=Vds=0V, Force current

--

1.25V
A

Input capacitance
Output capacitance

Ciss
Coss

Vds=15V, Vgs=0V, f=1MHz

-

1027
65-

pF
pF

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge (10V)

Crss-

46-

pF

Qg

-

19.0-

nC

Gate-source charge

Qgs-2.6-nC

Gate-drain charge
Turn-on delay timeTurn-on rise time

Qgdtd(on)-4.13-nC
ns

Turn-off delay timeTurn-off fall time

trVds=30V, Vgs=10V
td(off) Rgen=3.3Ω, Id=4Atf-

34
236-nsns
ns

Reverse recovery time
Reverse recovery charge

trrQrr

-

12.1
6.7

-

nsnC

If=4A, di/dt=100A/μs

2V

Gate-body leakage current
Forward transconductance

Vds=48V, Vgs=10V, Id=4A±100
28.3
-

VnA
S21, 5Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
3. The EAS data shows Max. rating . The test condition is Vdd=25V, Vgs=10V, L=0.1mH, Ias=21A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.1
2/4

FKK6014

Single N-channel MOSFET
FETek Technology Corp.

ELM4N6014FRA-S
N-Ch 60V Fast Switching MOSFETs

http://www.elm-tech.com■Typical characteristics
Typical Characteristics

60

20ID=4A

VGS=10VVGS=7V
VGS=5VID Drain Current (A)

1553

RDSON (mΩ)

VGS=4.5V

45

10VGS=3V38530000.5

11.5

2VDS , Drain-to-Source Voltage (V)22.5

Fig.1 Typical Output Characteristics

46

VGS (V)810

Fig.2 On-Resistance vs G-S Voltage

10

IS -Source Current(A)86

TJ=150�

4TJ=25�

2000.30.6

VSD , Source-to-Drain Voltage (V)0.9

Fig.3 Source Drain Forward Characteristics

Fig.4 Gate-Charge Characteristics

1.8

Normalized VGS(th)

1.4

10.6

0.2-50050100

TJ ,Junction Temperature (�)150

Fig.5 Normalized VGS(th) vs TJ

Fig.6 Normalized RDSON vs TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3Rev.1.1
3/4

Single N-channel MOSFETFKK6014

ELM4N6014FRA-S

http://www.elm-tech.com
N-Ch 60V Fast Switching MOSFETs

FETek Technology Corp.

Capacitance(pF)

10000

F=1.0MHz
Ciss

1000

100

Coss
Crss

101591317VDS Drain to Source Voltage(V)2125

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (RθJA)

1

DUTY=0.50.2
0.1

0.10.05
0.01

PDM

0.01

T ON
T

D = TON/T

SINGLE

TJpeak = TC+PDMXRθJC

0.001
0.0001

0.001

0.01

0.1

1101001000t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=VDS
90%

BVDSS

Td(on)Tr
Ton

Td(off)BVDSS
BVDSS-VDD
VDD

IAS

10%
VGS

1
L x IAS2 x
2Tf

VGS

Toff

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Switching Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

4

Rev.1.1
4/4