Single N-channel MOSFET
ELM43400CB-S

http://www.elm-tech.com■General description■Features

ELM43400CB-S uses advanced trench technology
to provide excellent Rds(on), low gate charge andlow gate threshold voltage.

• Vds=30V• Id=5.8A• Rds(on) = 27mΩ (Vgs=10V)• Rds(on) = 32mΩ (Vgs=4.5V)• Rds(on) = 40mΩ (Vgs=2.5V)■Maximum absolute ratings
Parameter
Drain-source voltage

Ta=25°C. Unless otherwise noted.
LimitUnit
Note30VSymbolVds

Gate-source voltage

Vgs
Ta=25°C

Continuous drain current±125.8

Id

Ta=70°C

VA

Pulsed drain current

Idm

4.9
20

Power dissipation
Tc=25°C
Storage temperature range
Operating junction temperature range

PdTstgTj

1-55 to 150-55 to 150

Symbol

Typ.
-Max.
125

Unit°C/W

Note
1-85°C/W

1A

2

W°C°C

3

■Thermal characteristics
Parameter
Thermal resistance junction-to-ambientRθjat ≤ 10s■Pin configuration■Circuit
D

SOT-23(TOP VIEW)
31

2

Pin No.
12

Pin name
GATESOURCE

3DRAINGS

Rev.1.0
1/4

Single N-channel MOSFET
ELM43400CB-Shttp://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance

30--V--

15μA

0.5-

±100
1.2nAV

Vgs=10V, Id=5.8A--

27

Rds(on) Vgs=4.5V, Id=5.0A
Vgs=2.5V, Id=4.0A--

3240mΩ

2

Vds=5V, Id=5A
Is=1A, Vgs=0V
Vgs=Vds=0V, Force current

-25-

1.2
5.8

SVA

21, 4

Vgs=0V, Vds=15V, f=1MHz-860
84-

pF
pF

Vgs=0V, Vds=0V, f=1MHz-

70
1.5-

pF
Ω-

11.5-

nC-

1.6
2.9-

nC
nC

Vds=24V, Vgs=0V
Vds=24V, Vgs=0V, Ta=55°C

Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=250μA

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

Gfs
VsdIs

Input capacitance
Output capacitance

CissCossReverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (4.5V)

CrssRgGate-source charge
Gate-drain charge

Qgs
Qgd

Turn-on delay timetd(on)
tr
Vgs=10V, Vds=15V, Id=5A

547

ns
nstd(off) Rgen=3Ω
tf

26
8

ns
ns

Turn-on rise timeTurn-off delay timeTurn-off fall timeQg
Vgs=4.5V, Vds=15V, Id=5.8A

NOTE :
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
3. The power dissipation is limited by 150°C junction temperature.
4. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.0
2/4

Single N-channel MOSFET
FETek Technology Corp.

ELM43400CB-S■Typical electrical and thermal characteristics

FKUC3502

N-Ch 30V Fast Switching
MOSFETs
http://www.elm-tech.com

Typical Characteristics

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs. Gate-Source

IS Source Current(A)64

TJ=150℃

2

TJ=25℃000.3

0.60.9VSD , Source-to-Drain Voltage (V)1.2

Fig.4 Gate-Charge Characteristics

Fig.3 Source Drain Forward Characteristics
1.8

Normalized On Resistance

1.81.4

Normalized VGS(th)

1.4

1.0

1

0.6

0.6

0.2

0.2
-50

050

100

TJ ,Junction Temperature (℃ )-50150Fig.5 Normalized VGS(th) vs. TJ

050100

TJ , Junction Temperature (℃)

150

Fig.6 Normalized RDSON vs. TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3Rev.1.03/4

Single N-channel MOSFETFKUC3502ELM43400CB-S

http://www.elm-tech.com
N-Ch 30V Fast Switching MOSFETs

FETek Technology Corp.

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (R θJA)

1
DUTY=0.5
0.2
0.1

0.1
0.05
0.02

0.01

0.01

0.001

SINGLE PULSE

PDM

TON
T

D = TON/T
TJpeak = TA + PDM x RθJA

0.00010.0001

0.001

0.01

0.1

110

100

1000t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
VDS
90%

10%
VGSTd(on)TrTonTd(off)

TfToffFig.10 Switching Time Waveform

Fig.11 Gate Charge Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A4

Rev.1.0
4/4