REVISIONSLTR

DESCRIPTIONADATE (YR-MO-DA)APPROVED

19-01-07

C. SAFFLE

Add case outline Y. -rrp

REV
SHEET
REV

A

A

A

A

A

A

A

A

A

SHEET

15

16

17

18

19

20

21

22

23

REV STATUS

REV

A

A

A

A

A

A

A

A

A

A

A

A

A

A

OF SHEETS

SHEET

1

2

3

4

5

6

7

8

9

10

11

12

13

14

PMIC N/A

PREPARED BY
RICK OFFICER

STANDARD
MICROCIRCUITDRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
http://www.dla.mil/landandmaritime

CHECKED BYRAJESH PITHADIAAPPROVED BY

THIS DRAWING IS AVAILABLEFOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSEAMSC N/A

CHARLES F. SAFFLEDRAWING APPROVAL DATE
17-02-13
REVISION LEVELAMICROCIRCUIT, LINEAR, BIPOLAR, HIGHPRECISION QUAD OPERATIONAL AMPLIFIER,
MONOLITHIC SILICONSIZECAGE CODE

A

67268
SHEET

DSCC FORM 2233
APR 97

DISTRIBUTION STATEMENT A. Approved for public release. Distribution is unlimited.

5962-16209
1 OF 235962-E076-19

1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) andspace application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962

L

16209

Federalstock classdesignator\

RHA
designator(see 1.2.1)

01

V

X

A

Devicetype(see 1.2.2)

Deviceclass
designator(see 1.2.3)

Case
outline(see 1.2.4)

Leadfinish(see 1.2.5)/\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type

Generic number

01

OPA4277

Circuit function
High precision quad operational amplifier

1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:
Device class

Device requirements documentation

Q or V

Certification and qualification to MIL-PRF-38535

1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter

Descriptive designator

Terminals

XY

See figure 1
See figure 1

28
14

Package style
Ceramic dual in line
Ceramic flat pack, bottom brazed

1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

2

1.3 Absolute maximum ratings. 1/
Supply voltage (VS) ................................................................................................... 36 V maximum
Input voltage (VIN) ..................................................................................................... -VS – 0.7 V to +VS + 0.7 V
Output short circuit ................................................................................................... Continuous 2/
Power dissipation (PD):
Cases X and Y ....................................................................................................... 600 mW
Junction temperature (TJ) .......................................................................................... 150C
Lead temperature (soldering, 10 seconds) ................................................................ 300C
Storage temperature range ....................................................................................... -55C to +125C
Electrostatic discharge (ESD) rating:
Human body model (HDM) .................................................................................... 2000 V
Thermal resistance, junction-to-case (JC):
Case X ................................................................................................................... 14.03C/W
Case Y ................................................................................................................... 7.7C/W
Thermal resistance, junction-to-ambient (JA):
Case X ................................................................................................................... 43.1C/W
Case Y ................................................................................................................... 79.1C/W
1.4 Recommended operating conditions.
Dual supply voltage (VS) ........................................................................................... 5 V minimum to 15 V maximum
Ambient operating temperature range (TA) ............................................................... -55C to +125C
1.5 Radiation features.
Maximum total dose available (low dose rate  0.010 rad(Si)/s) ............................... 50 krad(Si) 3/ 4/Single event phenomenon (SEP):No single event latchup (SEL) occurs at effective LET (see 4.4.4.2) ..................... ≤ 85 MeV/mg/cm2 5/______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/

Short circuit to ground, one amplifier per package.

3/

The manufacturer supplying device type 01 has performed low dose rate irradiation test at condition D and radiation end
point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, methods 1019,
condition D for total dose of 50 krad(Si).

4/The device type 01 may exhibit enhanced low dose rate sensitivity(ELDRS) effects in a space environment. However,post irradiation electrical parametric limits remain within the pre-irradiation specifications limits during low dose rate testingat TID level 50 krad(Si)5/Limits are characterized at initial qualification and after any design or process changes which may affect the SEP
characteristics but are not production tested unless specified by the customer through the purchase order or contract.
See manufacturer’s SEE test report for additional detail.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

3

2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a partof this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in thesolicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDSMIL-STD-883 MIL-STD-1835 -Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.

DEPARTMENT OF DEFENSE HANDBOOKSMIL-HDBK-103 MIL-HDBK-780 -List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.

(Copies of these documents are available online at https://quicksearch.dla.mil/.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192
Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of semiconductor Devices.
(Copies of these documents are available online at https://www.astm.org).
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

4

3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2 .
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over thefull ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electricaltests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also bemarked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still bemarked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliancesubmitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shallbe provided with each lot of microcircuits delivered to this drawing.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

5

TABLE IA. Electrical performance characteristics.
Test

SymbolConditions 1/-55C  TA +125C

Group A
subgroups

Devicetype

LimitsUnit

VS = 5 V to 15 V,
RL = 2 k
unless otherwise specified

Min

Max

Offset voltage
Input offset voltage

1

VOS

65

01

140

2, 3
Input offset voltage

Versus power supply,

1

V

1

01

V/V

V S = 2 V to 18 V
1

2, 3

VS = 2 V to 18 V
Input bias current
Input bias current

IB

1, 2, 3

01

17.5

nA

Input offset current

IOS

1, 2, 3

01

17.5

nA

Common mode voltage range

VCM

1, 2, 301

-VS + 2+VS - 2

V

Common mode rejection ratio

CMRR

4

01

114

Input voltage range

VS + 2 V  VCM  +VS – 2 V

5, 6

dB

114

Open loop gain
Open loop voltage gain

AOL

4, 5, 6VO = -VO + 1.5 V to

01

118

dB

+V O – 1.5 V, RL = 2 k118

VO = -VO + 3.4 V to
+V O – 3.4 V, RL = 600 ,
VS = 7 V
See footnotes at end of table.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

6

TABLE IA. Electrical performance characteristics - Continued.
Test

SymbolConditions 1/-55C  TA +125C

Group A
subgroups

Devicetype

LimitsUnit

VS = 5 V to 15 V,
RL = 2 k
unless otherwise specified

Min

Max

-VS +
0.5

+VS –
1.2

RL = 2 k

-VS +
1.5

+VS –
1.5

RL = 600 , VS = 7 V

-VS +
3.4

+VS –
3.4

OutputVoltage output

VO

1, 2, 3

RL = 10 k

01VPower supply
Specified supply voltage range

VS

1, 2, 3

01

5

15

V

Absolute operating voltage
range

VS

1, 2, 3

01

2

18

V

Quiescent current(per amplifier)

IQ

1

01

850

A

1/

IO = 0 mA

900

2, 3

RHA device type 01 supplied to this drawing will meet all levels M, D, P, and L of irradiation for condition D.
However, device type 01 is only tested at the “L” level in accordance with MIL-STD-883, method 1019, condition D(see 1.5 herein). Post irradiation parametric limit falls within the specified limits in table IA unless otherwise specified
herein. When performing post irradiation electrical measurements for any RHA level, TA = +25C.

TABLE IB. SEP test limits. 1/ 2/ 3/
Device
type
01

SEP

Temperature (TC)

Bias VIN

Linear energy transfer (LET)No SEL+125C±15 V

Effective
LET  85 MeV/mg/cm2

1/ For single event phenomena (SEP) test conditions, see 4.4.4.2 herein.
2/ Technology characterization and model verification supplemented by in-line data may be used in lieu ofend of line testing. Test plan must be approved by the technical review board and qualifying activity.
3/ SEP is characterized at initial qualification and after any design or process changes which may affect the SEP
characteristics but are not production tested unless specified by the customer through the purchase order orcontract. See manufacturer’s SEE test report for additional detail.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

7

Case outline X

FIGURE 1. Case outline.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

8

Case outline X – continued.

Dimensions
SymbolInchesMillimeters

Min

Max

Min

Max

A

.105

.175

2.67

4.45

b

.015

.021

0.38

0.53

b1

.038

.060

0.97

1.52

c

.008

.012

0.20

0.30

D

1.315

1.485

33.40

37.72

E

.280

.310

7.11

7.87

E1

.290

.325

7.37

8.26

e

.100 BSC

2.54 BSC

L

.125

.175

3.18

4.45

Q

.025

.055

0.64

1.40

NOTES:
1. Controlling dimensions are inch, millimeter dimensions are given for reference only.
2. Ceramic quad flat pack with flat leads brazed to non-conductive tie bar carrier.
3. This package is hermetically sealed with a metal lid.
4. The leads are gold plated and can be solder dipped.
5. Leads not shown for clarity purposes
6. Lid and heat sink are connected to GND leads.

FIGURE 1. Case outline - continued.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

9

Case YFIGURE 1. Case outline - continued.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

10

Case outline Y – continued.

Dimensions
SymbolMillimeters

Inches

Min

Max

Min

Max

A

---

2.209

---

.087

c

.120

.200

.005

.008

D

10.22410.724

.403

.422

D1

9.58 REF

E

7.35.377 REF
7.85

.289

.309

E1

7.09 REF.279 REF

E2

5.498 REF

.216 REF

E3

7.62 BSC.300 BSCe

1.27 BSC.050 BSC

L

---

25

---

.984

Q

---

.430

---

.017

NOTES:
1. Controlling dimensions are millimeters, inch dimensions are given for reference only.
2. This package is hermetically sealed with a metal lid. The lid is not connected to any lead.
3. The leads are gold plated.

FIGURE 1. Case outline - continued.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

11

Device type

01

Case outline

X

Terminal
numberTerminal
symbolI/O

1

NC

Not applicableNot connected.

2

OUTPUT A

O

Output channel A.

3

NC

Not applicableNot connected.

4NC

Not applicableNot connected.

5-INPUT A

I

Inverting input channel A.

6+INPUT A

I

Non-inverting input channel A.

7

+VS

---

Positive (highest) power supply.

8

NC

Not applicable

9+INPUT B

I

Non-inveting input channel B.

10-INPUT B

I

Inverting input channel B.

11

NC

Not applicableNot connected.

12NC

Not applicableNot connected.

13

OUTPUT B

O

Output channel B.

14

NC

Not applicableNot connected.

15NC

Not applicableNot connected.

16

OUTPUT C

O

Output channel C.

17

NC

Not applicableNot connected.

18

NC

Not applicableNot connected.

19-INPUT C

I

Inverting input channel C.

20+INPUT C

I

Non-inverting input channel C.

21

NC

Not applicable

22

-VS

---

Negative (lowest) power supply.

23+INPUT D

I

Non-inverting input channel D.

24-INPUT D

I

Inverting input channel D.

25

NC

Not applicableNot connected.

26

NC

Not applicableNot connected.

27

OUTPUT D

O

Output channel D.

28

NC

Not applicableNot connected.

Description

Not connected.

Not connected.

FIGURE 2. Terminal connections.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

12

Device type

01

Case outline

Y

Terminal
numberTerminal
symbolI/O

1

OUTPUT A

O

Output channel A.

2-INPUT A

I

Inverting input channel A.

3+INPUT A

I

Non-inverting input channel A.

4

+VS

---

Positive (highest) power supply.

5+INPUT B

I

Non-inverting input channel B.

6-INPUT B

I

Inverting input channel B.

7

OUTPUT B

O

Output channel B.

8

OUTPUT C

O

Output channel C.

9-INPUT C

I

Inverting input channel C.

10+INPUT C

I

Non-inverting input channel C.

11

-VS

---

Negative (lowest) power supply.

12+INPUT D

I

Non-inverting input channel D.

13-INPUT D

I

Inverting input channel D.

14

OUTPUT D

O

Output channel D.

Description

FIGURE 2. Terminal connections - continued.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

13

4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a.

The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in thedevice manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained underdocument revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified inmethod 1015 of MIL-STD-883.

b.

Interim and final electrical test parameters shall be as specified in table IIA herein.

c.

Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.

4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein.
4.4.1 Group A inspection.
a.

Tests shall be as specified in table IIA herein.

b.

Subgroups 7, 8, 9, 10, and 11 in table IA shall be omitted as devices technology allowed.

4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

14

TABLE IIA. Electrical test requirements.
Test requirements

Subgroups(in accordance with
MIL-PRF-38535, table III)
DeviceDeviceclass Q
class V
1,2,3,4,5,6
1,2,3,4,5,6

Interim electricalparameters (see 4.2)
Dynamic burn-in test
Final electricalparameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electricalparameters (see 4.4)
Group D end-point electricalparameters (see 4.4)
Group E end-point electricalparameters (see 4.4)
1/
2/

Required

Required

1,2,3,4,5,6 1/

1,2,3,4,5,6 1/ 2/

1,2,3,4,5,6

1,2,3,4,5,6

1,2,3,4,5,6

1,2,3,4,5,6 2/

1,4

1,4

1

1

PDA applies to subgroup 1.
Delta limits as specified in table IIB shall be required where specified,
and the delta limits shall be completed with reference to the previous
electrical parameters.

TABLE IIB. Burn-in and operating life test (TA = +25C) delta parameters.
Parameters

SymbolQuiescent current
per amplifier

IQ

Output voltage

Device type

Limit

IO = 001

0.85 AVO

VS = 7 V, RL = 600 

010.396 V

STANDARD
MICROCIRCUIT DRAWINGSIZEDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

Conditions

5962-16209

A
REVISION LEVEL

A

SHEET

15

4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured(see 3.5 herein).
a.

End-point electrical parameters shall be as specified in table IIA herein.

b.

For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table IA at TA = +25C 5C, after exposure, to the subgroups specified intable IIA herein.

4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition D as specified herein.
4.4.4.2 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed onclass V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle asapproved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or
latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP
testing. The recommended test conditions for SEP are as follows:a.

The ion beam angle of incidence shall be between normal to the die surface and 45 to the normal, inclusive(i.e. 0  angle  60). No shadowing of the ion beam due to fixturing or package related affects is allowed.

b.

The fluence shall be  100 errors or  107 ions/cm2.

c.

The flux shall be between 102 and 105 ions/cm2/s. The cross-section shall be verified to be flux independent bymeasuring the cross-section at two flux rates which differ by at least an order of magnitude.

d.

The particle range shall be  20 micron in silicon.

e.

The test temperature shall be +125C 10% for SEL.

f.

Bias conditions for VIN shall be as listed in Table IB for the latchup measurements.

g.

For SEL test limits, see Table IB herein.

5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record forthe individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users andthis list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

16

6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate ofcompliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available fromthe device manufacturer:
a. RHA test conditions of SEP.
b. Occurrence of latchup (SEL).

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

17

APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-16209
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting ofmilitary high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number(PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962

L

Federalstock classdesignator\

RHA
designator(see A.1.2.1)

16209

01

V

9

A

Devicetype(see A.1.2.2)

Deviceclass
designator(see A.1.2.3)

Die
code

Die
details(see A.1.2.4)/\/
Drawing number

A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type

Generic number

01

OPA4277

Circuit function
High precision quad operational amplifier

A.1.2.3 Device class designator.
Device class
Q or V

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

18

APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-16209
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each productand variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type

Figure number

01

A-1

A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type

Figure number

01

A-1

A.1.2.4.3 Interface materials.
Die type

Figure number

01

A-1

A.1.2.4.4 Assembly related information.
Die type

Figure number

01

A-1

A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

19

APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-16209
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKSMIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at https://quicksearch.dla.mil/.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, thetext of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post-irradiation parameter limits are as specified in table IA of the body of thisdocument.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table IA.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to acustomer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

20

APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-16209
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate ofcompliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shallaffirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and therequirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordancewith MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:a.

Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.

b.

100% wafer probe (see paragraph A.3.4 herein).

c.

100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or thealternate procedures allowed in MIL-STD-883, method 5004.

A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (seeA.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4,
4.4.4.1, and 4.4.4.2 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan oras specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical andelectrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, andlogistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to
DLA Land and Maritime -VA and have agreed to this drawing.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

21

APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-16209

FIGURE A-1. Die bonding pad locations and electrical functions.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

22

APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-16209

Pad number

X minimum

Y minimum

X maximumY maximum

1

1791.042

7290.340

1901.751

7401.0492

1701.719

6111.536

1807.397

6217.2133

1701.719

5326.505

1812.429

5437.21541555.784

4390.507

1661.461

4498.70051706.752

3462.057

1807.397

3562.702

6

1701.719

2671.994

1807.397

2777.671

7

1796.074

1498.222

1896.719

1598.86783278.071

1498.222

3383.748

1603.900

93362.361

2671.994

3473.071

2782.704103367.393

3462.057

3473.071

3567.734113407.651

4391.765

3513.329

4497.442

123367.393

5331.537

3468.038

5432.182

13

3362.361

6111.536

3468.038

6217.213143273.039

7290.340

3383.748

7401.049

NOTE: Bond pad coordinates in microns. Substrate must be biased to –VS, negative (lower) power supply.
Die physical dimensions.
Die size: 85.00 mils x 28.00 mils
Die thickness: 15 milsInterface materials.
Top metallization: AlCu (0.5%)
Backside metallization: Silicon with backgrind
Backside potential: Negative (lower) power supply
Glassivation.
Type: PTEOS
Thickness: 4800 Angstoms
Bond pad thickness: 990 nm to 1210 nm
Substrate: Single crystal silicon
Assembly related information.
Substrate potential:
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions - continued.

STANDARD
MICROCIRCUIT DRAWINGDLA LAND AND MARITIMECOLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97

SIZE

5962-16209

A
REVISION LEVEL

A

SHEET

23

STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 19-01-07
Approved sources of supply for SMD 5962-16209 are listed below for immediate acquisition information only andshall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will berevised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and acertificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at https://landandmaritimeapps.dla.mil/Programs/Smcr/.

Standard
microcircuit drawing
PIN 1/

VendorCAGE
numberVendorsimilar
PIN 2/

5962L1620901VXA

01295

OPA4277-RHA

5962L1620901VYC

01295

OPA4277-RHA

5962L1620901V9A

01295

OPA4277-RHAKGD

1/ The lead finish shown for each PIN representing a hermetic package
is the most readily available from the manufacturer listed for that part.
If the desired lead finish is not listed, contact the vendor to determine
its availability.
2/ Caution. Do not use this number for item acquisition. Items acquired
to this number may not satisfy the performance requirements of this drawing.
Vendor CAGE
number01295

Vendor nameand address
Texas Instruments, Inc.
Semiconductor Group
8505 Forest Lane
P.O. Box 660199
Dallas, TX 75243

The information contained herein is disseminated for convenience only and theGovernment assumes no liability whatsoever for any inaccuracies in theinformation bulletin.