The 7th International Joint Workshop onNitride Semiconductors and Devices
11st April 2016
Innovation Center for Multi-Business of Nitride Semiconductors
Nagoya Institute of Technology, JapanNOTICEThe International Joint Workshop on Nitride Semiconductors and Devices is a major academic workshop in thefield of wide band gap semiconductors research. It presents high-impact scientific and technological advances inmaterials and devices based on nitride semiconductors. The first international joint workshop was started by NIT
in 2008 in Nagoya and followed by in Beijing (2009), Singapore (2010), Xi`an (2011), Guangzhou (2012), Sanya(2013). After two year`s pause, the 7th workshop will return back to Nagoya and be held on April 11 (Mon.),2016.
We sincerely invite you to join the workshop organized by Nagoya Institute of Technology. The key time pointsof the workshop are listed as follows:
Before Dec. 10, 2015:
Report title providing
Before Jan. 15, 2016:
One page abstract providing
Apr. 01, 2016:
Program announcement
Apr. 11, 2016:
Workshop and Lab tour
(Venue: Innovation Center for Multi-Business of Nitride Semiconductors,Gokiso-cho, Showa-ku, Nagoya Institute of Technology, Nagoya, Aichi, Japan)

We appreciate your kind support and look forward to your participation.

Prof. Takashi Egawa
Nagoya Institute of Technology, JapanApril 2016

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Program Schedule: April 11, 2016
12:00: Workshop Registration
12:30-12:50
Ta/Si-based Non-Gold Ohmic Contacts for GaN HEMTs on Si, G. I. Ng and S. Arulkumaran, Nanyang
Technological University, Singapore
12:50-13:10
Selective Area Growth: A promising way towards stable trench gate E-mode GaN MOSFET on Si substrate,
Yang Liu, Baijun Zhang, Sun Yat-sen University, China
13:10-13:30
Breakdown electric field of each layer in AlGaN/GaN high-electron-mobility transistors on Si substrates, YuyaYamaoka, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto and Takashi Egawa, Nagoya
Institute of Technology, Japan
13:30-13:50
Improved Device Characteristics of AlInN/GaN MOS-HEMTs on Silicon using Atomic Layer deposited Al2O3,
Joseph. J. Freedsman, Arata Watanabe and Takashi Egawa, Research Center for Nano-Device and System,
Nagoya Institute of Technology, Japan
13:50-14-10
Growth of Thick AlN on AlN/Sapphire by Hydride Vapor Phase Epitaxy, H. Miyake, Y. Yamashita, D. Yasui, K.
Hiramatsu, M. Iwaya, I. Akasaki, H. Amano, Mie University, Japan
14-10:14:30
Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides, Zhiqiang Liu, Institute of Semiconductors,
CAS, China
14:30-14:50
Development and performance of DUV LED and optical pumped LD, Yun Zhang, Institute of Semiconductors,
CAS, China
14:50-15:10 Coffee Break
15:10-15:30
IC technology compatible silicon substrate-based 3-dimensional light emitting devices, Guodong Yuan, Instituteof Semiconductors, CAS, China
15:30-15:50
Recent Progress in GaN-LED with ZnO Transparent Conductive Layer, Gang Wang, Bingfeng Fan, Sun Yat-senUniversity, China
15:50-16:10
High efficiency p-type doping of AlGaN and its application in fabricating high-gain UV photodetectors, HaoJiang, Sun Yat-sen University, China
16:10-16:30
GaN-based Heterostructures on Si by MBE for HEMT and Photodetector applications, K. Radhakrishnan and L.
Ravikiran, N. Dharmarasu, Nanyang Technological University, Singapore
16:30-16:50
Report Title: Not decided, Shuhaimi, University of Malaya
17:00-17:40: Lab tour
18:00-20:00: Reception (Café sala)2

Café sala

窒化物半導体マルチビジネス創生センター（56 号館）(Innovation Center for Multi-Business of Nitride Semiconductors)

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