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D5890

Silicon NPN transistor epitaxial type
D5890
[ Applications ]Switching regulators/ DC-DC convertors
Low voltage drop out(LDO) linear reguiator out-put
Battery chargers
Power management switches[ Feature ]Low collector-emitter saturation voltage VCE(sat)= 210mV(Max.) at IC=2A, IB=0.2A
High collector current ICP= 5A
High DC current gain hFE= 150(Min.) at VCE= 2V, IC= 3A
Complement PNP type P/N B5890 available[ Absolute maximum ratings (Ta=25C) ]Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltageCollector current(DC)Repetitive peak collector current *1
Collector current(Pulse) *2
Base current
Junction temperature
Storage temperature*1) Pulse width≦100ms, duty≦25%*2) Single pulse peak

Symbol Maximum ratings
VCBO
20VCEO
20VEBO
5IC
23ICRP
ICP
50.5
IBTj
150Tstg-65 to 150

UnitVVVAA
A
A
CC[ Electrical characteristics (Ta=25C) ]Characteristic
SymbolCollector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBOEmitter cut-off current
IEBO
DC current gain 1
hFE 1
DC current gain 2
hFE 2
DC current gain 3 *3hFE 3
DC current gain 4 *3hFE 4
DC current gain 5 *3hFE 5Collector-emitter saturation voltage 1VCE(sat) 1

Collector-emitter saturation voltage 2VCE(sat) 2

Collector-emitter saturation voltage 3 *3 VCE(sat) 3
Collector-emitter saturation voltage 4 *3 VCE(sat) 4
Collector-emitter saturation voltage 5 *3 VCE(sat) 5

Collector-emitter on resistance *3RCE(sat)Base-emitter saturation voltage 1 *3VBE(sat) 1Base-emitter saturation voltage 2 *3VBE(sat) 2

Base-emitter on voltage *3
Transition frequency
Collector output capacitance*3) Pulse width≦300us, duty≦2%VBE(on)
fT
Cob

Min.
2020
5220
220
220200
120
100
-Typ.
80
-Max.
100
100
70
120
230
210
310
105
1.1
1.2
1.2
35

Unit
V
V
VnA
nA
mVmVmVmVmVm･ohm
VV
V
MHz
pF

Conditions
IC= 10uA, IE= 0A
IC= 1mA, IB= 0A
IE= 10uA, IC= 0A
VCB= 20V, IE= 0A
VEB= 5V, IE= 0A
VCE= 2V, IC= 0.1AVCE= 2V, IC= 0.5A
VCE= 2V, IC= 1A
VCE= 2V, IC= 2A
VCE= 2V, IC= 3A
IC= 0.5A, IB= 50mA
IC= 1A, IB= 50mA
IC= 2A, IB= 40mA
IC= 2A, IB= 0.2A
IC= 3A, IB= 0.3A
IC= 2A, IB= 0.2A
IC= 2A, IB= 40mA
IC= 3A, IB= 0.3A
VCE= 2V, IC= 1A
VCE= 5V, IE= -0.1A
VCB= 10V, f = 1MHz, IE= 0A

Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.

PHENITEC SEMICONDUCTOR Corp.

No. D5890-20080121- 1/2 -D5890

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Fig.1 VBE(on) - IC
at VCE= 2V, Ta= 25C

Fig.3 VCE(sat) - IC
at IC/IB= 10, Ta= 25C

Fig.2 hFE - IC
at VCE= 2V, Ta= 25C

10

1000

1000

0.1

0.01

100

100.001

0.001
0.4

0.5

0.6

0.7

0.8

0.9

10.001100.010.1

1Fig.4 VCE(sat) - IC
at IC/IB= 20, Ta= 25C

Fig.5 VCE(sat) - IC
at IC/IB=50, Ta= 25C

Fig.6 VBE(sat) - IC
at IC/IB= 10, Ta= 25C

10000.010.1
1Collector current : IC (A)Base-emitter saturation
voltage : VBE(sat) (V)

10100

1010.001

1010100.010.1

11010.10.001

0.01

0.1

110Collector current : IC (A)Collector current : IC (A)Fig.7 fT - IE
at VCE= 5V, Ta= 25C

Fig.8 Cob - VCB
at f= 1MHz, Ta= 25C

1000

1000

Collector output
capacitance : Cob (pF)Transition frequency :fT (MHz)

1Collector current : IC (A)1001001010.001

0.1

10Collector current : IC (A)Collector-emitter saturation
voltage : VCE(sat) (mV)Collector-emitter saturation
voltage : VCE(sat) (mV)

0.01

100

Base-emitter on voltage :VBE(on) (V)1000

10.001

Collector-emitter saturation
voltage : VCE(sat) (mV)

DC current gain : hFE

Collector current : IC (A)1

100

1010.01

0.1

Emitter current : -IE (A)10.1

110100

Collector-base voltage : VCB (V)

90-20080121
PHENITEC SEMICONDUCTOR Corp.

No. D5890-20080121- 2/2 -