ග㟁Ꮚศගἲ࡟ࡼࡿSiO2/Si⏺㠃‽఩Ḟ㝗ࡢᾘ⁛࡟క࠺ṍࡳ≧ែኚ໬ࡢゎᯒ㕥ᮌ 㝧ὒ1, 㧗ᶫ ࿴ᩄ2, ዟᒣ ு㍜1, ᑠᯘ ᘯ἞1, ᘅ℩ ㄹ1, ᰟ⏣ ள⏤⨾1, 㛛㔝 Ṋ1,ྂ㈡ ⚈Ὀ1, ᰩ⏣ ୍ᡂ1
 1ᰴᘧ఍♫SUMCO, 2బ㈡኱Ꮫࢩࣥࢡࣟࢺࣟࣥගᛂ⏝◊✲ࢭࣥࢱ࣮
1. ࡣࡌࡵ࡟2. ᐇ㦂᪉ἲ

CMOS ࢖࣓࣮ࢪࢭࣥࢧ㸦CIS㸧ࡢ㟂せࡢᣑ኱࡟క࠸ࠊ2-1 ヨᩱస〇᪉ἲ

CIS ࡢ〇ရᛶ⬟ྥୖ࡟ᑐࡍࡿᕷሙ࠿ࡽࡢせồࡀ㧗

ᅗ 1 ࡣࠊH+ὀධ SiO2/Si ᵓ㐀ࡢ᩿㠃ᅗ࡛࠶ࡿࠋヨᩱࡲࡗ࡚࠸ࡿࠋCIS ࡢ〇ရᛶ⬟ྥୖ࡟ࡣࠊ〇ရᛶ⬟ࡢᣦࡢస〇ᡭ㡰ࡣୗグࡢ㏻ࡾ࡛࠶ࡿࠋp ᆺ Si(001)ᇶᯈࡢ

ᶆ࡛࠶ࡿᬯ㟁ὶࢆᴟ㝈ࡲ࡛పῶࡍࡿࡇ࡜ࡀᚲ㡲せ௳RCA Ὑίࢆ⾜ࡗࡓᚋࠊ600ºC ࡛⇕㓟໬ࡋࠊ⭷ཌࡀ 1.2

࡛࠶ࡿࠋᬯ㟁ὶࡢⓎ⏕※ࡢ1ࡘ࡜ࡋ࡚ࠊࣇ࢛ࢺࢲ࢖࣮࢜nm ࡢ SiO2 ⭷ࢆᙧᡂࡋࡓࠋ᭱ᚋ࡟ࠊH+ࢆ㓟໬⭷㉺ࡋࢻ⾲ᒙ࡟࠾ࡅࡿ SiO2/Si ⏺㠃‽఩㸦Si ࢲࣥࢢࣜࣥࢢ࣎࡟ Si ᇶᯈ࡟ὀධࡋࡓࠋH+ ࡢࢻ࣮ࢬ㔞ࡣ 1×1016

ࣥࢻ㸦=Pb ࢭࣥࢱ࣮㸧㉳ᅉࡢḞ㝗‽఩㸧ࡀᣲࡆࡽࢀࡿࠋ

atoms/cm2㸪ຍ㏿࢚ࢿࣝࢠ࣮ࡣ 100 keV ࡜ࡋࡓࠋ୍㒊Pb ࢭࣥࢱ࣮ᐦᗘࡢపῶ࡟ࡣࠊỈ⣲㞺ᅖẼຍ⇕࡟ࡼࡿࡢヨᩱࡣࠊ㉸㧗┿✵୰࡟࡚ࠊ300㹼500ºC ࡛ 30 ศ㛫ຍPb ࢭࣥࢱ࣮ࡢỈ⣲⤊➃ฎ⌮ࡀ᭷ຠ࡛࠶ࡿࠋ୍᪉࡛ࠊ⇕ࡋࠊSi ᇶᯈ୰࠿ࡽỈ⣲ࢆእ᪉ᣑᩓࡉࡏࡓࠋ

CIS ࡟࠾ࡅࡿ㔠ᒓ㓄⥺࡜ᒙ㛫⤯⦕⭷ࡢከᒙᵓ㐀໬ࡀ
H+-projectedrange㐍ࡴ࡟ࡘࢀࠊእ㒊࠿ࡽࡢỈ⣲౪⤥ࡀ୙༑ศ࡟࡞ࡿᠱᛕࡀ࠶ࡿࠋࡇࡢࡼ࠺࡞ᢏ⾡ㄢ㢟ࢆཷࡅࠊᘢ♫ࡣࠊ᭱ඛ➃CIS ࡟ྥࡅࡓⅣ໬Ỉ⣲ศᏊ࢖࢜ࣥὀධ࢚ࣆࢱ࢟ࢩࣕ
ࣝ Si ࢙࣮࢘ࣁ[1]ࢆ㛤Ⓨࡋ࡚࠸ࡿࠋᮏ Si ࢙࣮࢘ࣁࡣࠊ
࢚ࣆࢱ࢟ࢩࣕࣝ Si ᒙ┤ୗࡢ Si ᇶᯈ୰࡟㧗⃰ᗘࡢỈ⣲
ࢆྵࡴ Si ࢙࣮࢘ࣁ࡛࠶ࡾࠊᐇ㝿ࡢ CIS ࡟࠾ࡅࡿ Pb

SiO2
H H H H H H H H H H
p-Si(001) sub.

ᅗ 1 ヨᩱ᩿㠃ᅗࠋModified from Suzuki et al.[3] © The ElectrochemicalSociety. Reproduced with permission. All rights
reserved.

ࢭࣥࢱ࣮⏤᮶ࡢᬯ㟁ὶࢆపῶ࡛ࡁࡿ[1]ࠋᚑ࠸ࠊᮏ Si࢙࣮࢘ࣁࢆ⏝࠸ࡓ CIS ࡢ〇㐀ᕤ⛬࡟࠾࠸࡚ࠊࣇ࢛ࢺࢲ2-2 ホ౯᪉ἲ࢖࣮࢜ࢻ⾲ᒙ࡬ࡢỈ⣲ࡢຠ⋡ⓗ࡞౪⤥ࡀᮇᚅ࡛ࡁࡿࠋ

ຍ⇕๓ᚋ࡟࠾ࡅࡿỈ⣲⃰ᗘࡢ῝ࡉศᕸࢆ஧ḟ࢖࢜

ࡲࡓࠊCIS ࡢᬯ㟁ὶࢆไᚚࡍࡿୖ࡛ࠊPb ࢭࣥࢱ࣮ࡢ

ࣥ㉁㔞ศᯒἲ㸦SIMS㸧࡟ࡼࡗ࡚ࠊPb ࢭࣥࢱ࣮ᐦᗘࢆⓎ⏕ཬࡧᾘ⁛ࡢ࣓࢝ࢽࢬ࣒ࡢᢕᥱࡀ㔜せ࡛࠶ࡿࠋ㏆ᖺ㟁Ꮚࢫࣆࣥඹ㬆ἲ㸦ESR㸧࡟ࡼࡗ࡚ホ౯ࡋࡓࠋࡲࡓࠊࡢඛ⾜◊✲࡛ࠊSi ࡢึᮇ㓟໬㏿ᗘࡀ Pb ࢭࣥࢱ࣮ࡢⓎ

SiO2/Si(001)⏺㠃࡟࠾ࡅࡿṍࡳ≧ែࢆග㟁Ꮚศගἲ࡟

⏕㏿ᗘ࡟ᚊ㏿ࡉࢀࠊ࠿ࡘࡑࢀࡀ SiO2/Si ⏺㠃㏆ഐࡢ Siࡼࡗ࡚ホ౯ࡋࡓࠋග㟁Ꮚศග ᐃࡣࠊ஑ᕞࢩࣥࢡࣟࢺཎᏊ㓄ิ࡟࠾ࡅࡿ㓟໬ㄏ㉳ṍࡳࡢᣲື࡜㐃ືࡍࡿࡇࣟࣥග◊✲ࢭࣥࢱ࣮㸦SAGA-LS㸧ࡢ BL13㸦బ㈡኱

࡜ࡀ᫂ࡽ࠿࡟࡞ࡗࡓ[2]ࠋ୍᪉࡛ࠊPb ࢭࣥࢱ࣮ࡢỈ⣲⤊Ꮫࣅ࣮࣒ࣛ࢖ࣥ㸧࡟࡚ᐇ᪋ࡋࡓࠋບ㉳ග࡟ࡣࠊ350 eV➃࡟࠾ࡅࡿࠊSiO2/Si ⏺㠃ࡢṍࡳ࡜ࡢ┦㛵ᛶࡣໟᣓⓗࡢࢩࣥࢡࣟࢺࣟࣥᨺᑕගࢆ⏝࠸ࠊ⬺ฟゅࡣ 90°࡜ࡋࡓࠋ࡟ゎ᫂ࡉࢀ࡚࠸࡞࠸ࠋᮏ◊✲࡛ࡣࠊ㧗ศゎ⬟ග㟁Ꮚศග ᐃ࡟ࡼࡗ࡚ࠊPb3㸬⤖ᯝཬࡧ⪃ᐹࢭࣥࢱ࣮ࡢᾘ⁛࡟࠾ࡅࡿ SiO2/Si ⏺㠃ࡢṍࡳࡢᣲືࢆึࡵ࡟ࠊᵝࠎ࡞ ᗘ࡛ຍ⇕ࡋࡓヨᩱ࡟ᑐࡋ࡚ ESRヲ⣽࡟ㄪ࡭ࡓ[3]ࠋ࡞࠾ࠊホ౯⏝ヨᩱ࡜ࡋ࡚ࠊⅣ໬Ỉ⣲ᐃࢆ⾜࠸ࠊPb ࢭࣥࢱ࣮ᐦᗘࢆホ౯ࡋࡓ㸦ᅗ 2㸧ࠋࡑศᏊ࢖࢜ࣥὀධ Si ࢙࣮࢘ࣁࢆᶍࡋࡓࣉࣟࢺࣥ㸦H+㸧ࡢ⤖ᯝࠊຍ⇕ ᗘࡢୖ᪼࡟క࠸ࠊPb ࢭࣥࢱ࣮ᐦᗘࡀῶ

ὀධ Si ᇶᯈࢆ⏝࠸࡚ SiO2/Si ᵓ㐀ࢆస〇ࡋࡓࠋᑡࡍࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋࡼࡗ࡚ࠊSi ᇶᯈ୰࠿ࡽእ᪉ᣑ
ᩓࡋࡓỈ⣲ࠊࡶࡋࡃࡣ SiO2/Si(001)⏺㠃࡟࠾ࡅࡿ⇕ᛂ Pb center density (㽢1012 cmí2)ຊ࡟ࡼࡗ࡚ Pb ࢭࣥࢱ࣮ࡀ⤊➃ࡉࢀࡓ࡜᥎ ࡉࢀࡿࠋ࡚ࠊSiO2/Si(001)⏺㠃㏆ഐࡢỈ⣲⃰ᗘࡀ㸪ຍ⇕๓ࡢ⃰ᗘ࡟㏆࠸್ࡲ࡛ῶᑡࡋࡓࠋࡇࢀࡣࠊ୍᪦ Pb ࢭࣥࢱ࣮8.0࡟྾╔ࡋࡓ H ཎᏊࡢከࡃࡀࠊ㧗 ຍ⇕࡟ࡼࡗ࡚෌⬺6.0

㞳ࡋࡓࡇ࡜ࢆ♧၀ࡋ࡚࠸ࡿ[4]ࠋ
᭦࡟ࠊග㟁Ꮚศග ᐃ࡟ࡼࡾࠊSiO2/Si(001)⏺㠃࡟

4.0࠾ࡅࡿ㓟໬ㄏ㉳ṍࡳࡢᣲືࢆㄪ࡭ࡓࠋᅗ 4(a)ཬࡧ(b)ࠊ
2.00(c)ࡣࠊຍ⇕๓ཬࡧ 300|Cࠊ500|C ࡛ຍ⇕ࡋࡓヨᩱࡢSi 2p ࢫ࣌ࢡࢺ࡛ࣝ࠶ࡿࠋSi 2p ࢫ࣌ࢡࢺࣝࡣࠊSi ᇶBefore
heating300
400500
Heating temperature (ºC)ᯈࣂࣝࢡ⏤᮶ࡢ Si–Si ⤖ྜࡢࣆ࣮ࢡཬࡧ㓟໬≀ࣆ࣮ࢡࠊṍࢇࡔ㸦ࣂࣝࢡ࡜⤖ྜ㊥㞳ࡀ␗࡞ࡿ㸧Si–Si ⤖ྜࡢࣆ࣮ᅗ 2 ຍ⇕๓ཬࡧᵝࠎ࡞ ᗘ࡛ຍ⇕ࡋࡓヨᩱ࡟࠾ࡅࡿPb ࢭࣥࢱ࣮ᐦᗘࠋ
Modified from Suzuki et al.[3] © The ElectrochemicalSociety. Reproduced with permission. All rights
reserved.

ఙᙇṍࡳࢆ Siǃ ࡜⾲グࡍࡿࠋග㟁Ꮚศග ᐃࡢ⤖ᯝࠊḟ࡟ࠊຍ⇕࡟ࡼࡿỈ⣲ࡢᣑᩓᣲືࢆヲࡋࡃㄪ࡭ࡿࡓ

ᑡࡋࡓࡢ࡟ᑐࡋࠊ500|C ࡛ࡢຍ⇕࡟ࡼࡗ࡚ Siǂ ཬࡧ Siǃ

ࡵࠊSIMSࢡ࡟ศ㞳ࡋࡓࠋࡇࡇ࡛ࠊᅽ⦰ṍࡳ Si–Si ⤖ྜࢆ Siǂࠊ300|C ࡛ࡢຍ⇕࡟ࡼࡗ࡚ Siǂ ཬࡧ Siǃ ࣆ࣮ࢡᙉᗘࡀῶ
ࣆ࣮ࢡᙉᗘࡀቑຍࡍࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋࡘࡲࡾࠊ300ᐃࢆᐇ᪋ࡋࡓ㸦ᅗ 3㸧ࠋ࡞࠾ࠊSIMS

ᐃࡣ SiO2 ᒙࡢ࢚ࢵࢳࣥࢢᚋ࡟⾜ࡗࡓࡓࡵࠊ῝ࡉࡀ 0|C ࡛ࡣ SiO2/Si ⏺㠃࡟࠾࠸࡚ṍ⦆࿴ࡀ㉳ࡇࡗࡓࡢ࡟

ࡢ఩⨨ࡣ Si ᇶᯈ⾲㠃㸦໬Ꮫฎ⌮๓ࡢ SiO2/Si(001)⏺㠃㸧ᑐࡋࠊ500|C ࡛ࡣṍࡳࡀ⵳✚ࡉࢀࡓ࡜⪃࠼ࡽࢀࡿࠋ࡟┦ᙜࡍࡿࠋ࠸ࡎࢀࡢヨᩱ࡟࠾࠸࡚ࡶࠊSi ᇶᯈ⾲㠃࡟ࡇࡇ࡛ࠊSiO2/Si(001)⏺㠃࡟࠾ࡅࡿ Pb ࢭࣥࢱ࣮ᐦᗘ࠾࠸࡚እ஘࡟ࡼࡿỈ⣲⃰ᗘࡢࣃ࢖ࣝ࢔ࢵࣉࡀほࡽࢀ࡜ṍࡳࡢᣲືࡢ㛵㐃ᛶ࡟ࡘ࠸࡚㆟ㄽࡍࡿࠋᅗ 5 ࡣࠊྛࡓࡓࡵࠊSiO2/Si(001)⏺㠃࡟࠾ࡅࡿỈ⣲⃰ᗘࡢ኱ᑠ㛵ヨᩱ࡟࠾ࡅࡿ Pb ࢭࣥࢱ࣮ᐦᗘࢆࠊṍࡳ Si ཎᏊᐦᗘ㸦༢ಀࡣࠊ⾲㠃࡟ྥ࠿ࡗ࡚ቑຍࡍࡿ┤๓ࡢ 0.1 Ǎm ࡢ῝ࡉ఩㸸ML㸧࡟ᑐࡋ࡚ࣉࣟࢵࢺࡋࡓࢢࣛࣇ࡛࠶ࡿࠋྛࣉ

࡟࠾ࡅࡿ኱ᑠ㛵ಀ࡜ྠࡌ࡜௬ᐃࡍࡿࠋᅗ 3 ࠿ࡽࠊຍ⇕ࣟࢵࢺࡢୗ࡟ྛຍ⇕ ᗘࢆグ㍕ࡋࡓࠋࡲࡓࠊṍࡳ Siᗘࡢୖ᪼࡟క࠸ࠊH ཎᏊࡢࣆ࣮ࢡ⃰ᗘࡀῶᑡࡋ࡚࠸

ཎᏊᐦᗘࡣSiǂ ཬࡧSiǃ ࣆ࣮ࢡᙉᗘࡢ࿴࠿ࡽ⟬ฟࡋࡓ[2]ࠋ
(a)Normalized
intensityࡿࡇ࡜ࡀࢃ࠿ࡿࠋࡲࡓࠊ300|C ཬࡧ 400|C ࡛ࡢຍ⇕࡟ࡼࡗ࡚ SiO2/Si(001)⏺㠃㏆ഐࡢỈ⣲⃰ᗘࡀቑຍࡋࡓࠋ
ࡇࡢࡇ࡜ࡣࠊຍ⇕࡟ࡼࡾእ᪉ᣑᩓࡋࡓ H ཎᏊࡢከࡃ
ࡀ SiO2/Si(001)⏺㠃࡟࠾ࡅࡿ Pb ࢭࣥࢱ࣮࡟྾╔ࡋࡓ(b)

Before heat
treatment
300ºC
400ºC
500ºC

1020
1019

SiĮ

Normalized
intensity

1021

Siȕ

(c)
Normalized
intensity

H concentration (atoms/cm3)

ࡇ࡜ࢆ♧၀ࡋ࡚࠸ࡿࠋ୍᪉࡛ࠊ500|C ࡛ࡢຍ⇕࡟ࡼࡗ

Bulk Si(w/o strain)

1018
1017
1016
00.5

1.0
Depth (ȝm)

1.5

1012.0ᅗ 3 ຍ⇕๓ཬࡧᵝࠎ࡞ ᗘ࡛ຍ⇕ࡋࡓヨᩱ࡟࠾ࡅࡿỈ⣲ࡢ SIMS ࣉࣟࣇ࢓࢖ࣝࠋ
Modified from Suzuki et al.[3] © The Electrochemical
Society. Reproduced with permission. All rights
reserved.

100
99
Binding energy (eV)98ᅗ 4 (a)ຍ⇕๓ཬࡧ(b)300|Cࠊ(c)500|C ࡛ຍ⇕ࡋࡓヨᩱࡢ Si 2p ࢫ࣌ࢡࢺࣝࠋ
Modified from Suzuki et al.[3] © The Electrochemical
Society. Reproduced with permission. All rights
reserved.

 

400|C ཬࡧ 500|C ࡛ຍ⇕ࡋࡓሙྜࡣࠊPb ࢭࣥࢱ࣮ᐦග ᐃ࡟ࡼࡾࠊPb ࢭࣥࢱ࣮࡜⏺㠃ࡢṍࡳࡢᣲືࡢ㛵㐃ᗘࡢῶᑡ࡜ྠ᫬࡟ṍࡳ Si ཎᏊᐦᗘࡀቑ኱ࡋࡓࠋᛶࢆㄪᰝࡋࡓࠋᮏ◊✲ࡢ⤖ᯝ࠿ࡽࠊỈ⣲ࡀ Pb ࢭࣥࢱ࣮Stesmans ࡽࡢඛ⾜◊✲࡟ࡼࢀࡤࠊSiO2/Si(111)⏺㠃ࢆ⤊➃ࡍࡿࡢ࡜ྠ᫬࡟ࠊSiO2/Si ⏺㠃ࡢṍࡳ࢚ࢿࣝ࡟࠾ࡅࡿఙᙇṍࡳࡀቑ኱ࡍࡿ࡯࡝ࠊPb ࢭࣥࢱ࣮ᐦᗘࡀࢠ࣮ࡢ⵳✚ࢆᢚ࠼ࡿྍ⬟ᛶࡀ♧၀ࡉࢀࡓࠋ

ῶᑡࡍࡿ[6]ࠋࡇࡢࡇ࡜࠿ࡽ⪃࠼ࡿ࡜ࠊ400|C ཬࡧ 500|C ࡛ࡢຍ⇕࡟ࡼࡿ Pb ࢭࣥࢱ࣮ᐦᗘῶᑡࡢᨭ㓄ⓗせᅉㅰ㎡ࡣࠊ⇕⭾ᙇ࡟ࡼࡿ SiO2/Si(001)⏺㠃ࡢṍࡳࡢ⵳✚࡛࠶ග㟁Ꮚศගᐇ㦂࡟࠶ࡓࡾከ኱࡞ࡈᨭ᥼ࢆ㡬࠸ࡓࠊబࡿ࡜⪃࠼ࡽࢀࡿࠋ୍᪉࡛ࠊ300|C ࡛ຍ⇕ࡋࡓሙྜࡣࠊ

㈡኱Ꮫࢩࣥࢡࣟࢺࣟࣥගᛂ⏝◊✲ࢭࣥࢱ࣮ࡢ㧗ᶫ ࿴Pb ࢭࣥࢱ࣮ᐦᗘࡢῶᑡ࡜ྠ᫬࡟ṍࡳ Si ཎᏊᐦᗘࡶῶᩄᩍᤵ࡟῝ࡃឤㅰ⮴ࡋࡲࡍࠋࡲࡓࠊ᪥㡭ࡢ◊✲㛤Ⓨάᑡࡋࡓࠋࡇࡢഴྥࡣࠊ400|C ཬࡧ 500|C ຍ⇕ࡢሙྜື࡟ࡈ⌮ゎ࡜ࡈᨭ᥼ࢆ㡬࠸࡚࠸ࡿࠊ௦⾲ྲྀ⥾ᙺ♫㛗ව

࡜㏫࡛࠶ࡾࠊPb ࢭࣥࢱ࣮⤊➃ࡢ㝿࡟ࠊఱࡽ࠿ࡢせᅉ࡛COO ࡢ㝆ᒇ ஂ༤ኈࠊụ⏣ ┤⣖ᖖົᇳ⾜ᙺဨ࡟ឤㅰṍࡳࡢ⵳✚ࡀᢚ࠼ࡽࢀ࡚࠸ࡿ࡜⪃࠼ࡽࢀࡿࠋඛࡢ

⮴ࡋࡲࡍࠋSIMS ศᯒ⤖ᯝ࡟ࡼࢀࡤࠊSiO2/Si(001)⏺㠃࡟࠾ࡅࡿỈ⣲⃰ᗘࡀࠊ300|C ࡛ࡢຍ⇕᫬࡟࠾࠸࡚᭱ࡶ㧗࠸ࠋཧ⪃ᩥ⊩

ࡼࡗ࡚ࠊ300|C ࡟࠾࠸࡚ࡣࠊỈ⣲ࡀ Pb ࢭࣥࢱ࣮ࢆ⤊[1] K. Kurita et al., “Proximity Gettering Design of➃ࡍࡿࡢ࡜ྠ᫬࡟ࠊSiO2/Si ⏺㠃ࡢṍࡳࢆ⦆࿴ࡋ࡚࠸

Hydrocarbon–Molecular–Ion–Implanted Siliconࡿྍ⬟ᛶࡀ࠶ࡿࠋỈ⣲࡟ࡼࡿṍ⦆࿴࡟ࡘ࠸࡚ࡣࠊ

Wafers Using Dark Current Spectroscopy forSi(111)ᇶᯈ࡬ࡢཎᏊ≧Ỉ⣲ࡢ↷ᑕ࡟ࡼࡗ࡚᭱⾲㠃ࡢ

CMOS Image Sensors”, Sensors 19, 2073 (2019).

ṍࡳ Si ཎᏊᐦᗘࡀῶᑡࡍࡿ஦౛[6]ࡀሗ࿌ࡉࢀ࡚࠸ࡿࠋ

[2] S. Ogawa et al., “Relation Between Oxidationࡇࡢࡇ࡜࠿ࡽࠊSiO2/Si(001)⏺㠃࡟࠾࠸࡚ࡶỈ⣲ࡀṍRateࡳࢆ⦆࿴ࡋ࡚࠸ࡿྍ⬟ᛶࡀ࠶ࡿ࡜⪃࠼ࡽࢀࡿࠋࡘࡲࡾ㸪

SiO2/Si(001)Pb ࢭࣥࢱ࣮ࡢỈ⣲⤊➃ࡣ⏺㠃࡟࠾ࡅࡿṍࡳ࢚ࢿࣝ

Oxidation”, Jpn. J. Appl. Phys. 52, 110128

ࢠ࣮ࡢቑຍࢆᢚ࠼ࡿຠᯝࢆ᭷ࡋࠊ⇕ᛂຊ࡟ࡼࡿ⤊➃࡜

(2013).

Pb center density (㽢1012 cmí2)ẚ࡭࡚ᵓ㐀ⓗ࡟Ᏻᐃ࡛࠶ࡿࡇ࡜ࡀ♧၀ࡉࢀࡿࠋ

andOxidation-InducedInterfaces

StrainduringatThermal[3] A. Suzuki et al., “Photoemission Spectroscopy
Study on Hydrogen Termination Effect on

8.0

SiO2/Si
6.0

Before heat treatment

4.0300ºC

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Fabricatedusing

H+-Implanted Si Substrate”, J. Electrochem. Soc.
167, 127505 (2020).
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2.0silicon wafers”, J. Appl. Phys. 50, 5847 (1979).

400ºC 500ºC
0[5] A. Stesmans et al., “Influence of in situ applied
0.5

1.0
1.5
Strained Si atom density (ML)

2.0

stress during thermal oxidation of (111) Si on Pbᅗ 5 H+ὀධ SiO2/Si ᵓ㐀࡟࠾ࡅࡿ Pb ࢭࣥࢱ࣮ᐦᗘࡢṍࡳ Si ཎᏊᐦᗘ࡟ᑐࡍࡿ౫Ꮡᛶࠋ
Modified from Suzuki et al.[3] © The ElectrochemicalSociety. Reproduced with permission. All rightsreserved.

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4. ࡲ࡜ࡵ
H+ὀධ SiO2/Si(001)ᵓ㐀ࡢ ESR

spectroscopyᐃཬࡧග㟁Ꮚศ 