Wi-Fi accessWireless internet service is available on the conference sites.
See printed version for passwords.

Welcome to Fukuoka ICNS-14

Welcome to Fukuoka, the host city of the 14th International Conference on Nitride
Semiconductors (ICNS-14). As Űa gateway to the world and a trade hubű, Fukuoka has a long
history of international exchange with China, Korea, and Southeast Asia since ancient times. It
is my great honor and pleasure to welcome you all to this prestigious world-class event to beheld in this historic international city.
As you may know, this conference was originally scheduled to be held in 2021, but it was
postponed due to the COVID-19 pandemic. To make matters worse, international conflicts andother political instability have plunged the country into an unsettled situation not long after the
pandemic situation took a turn for the better. In fact, we have faced many challenges anddifficulties in the past four years, but we have also witnessed the resilience and innovation of
the nitride semiconductor community. I would like to express my sincere gratitude to all theparticipants, speakers, sponsors, organizers, and staff who have made this conference possible
under these unprecedented circumstances.
The ICNS-14 will present high-impact scientific and technological advances in materials anddevices based on group-III nitride semiconductors, and feature plenary sessions, parallel topicalsessions, poster sessions, and an industrial exhibition. For more than a quarter of a century since
the first ICNS in 1995, ICNS has provided an excellent forum for nitride semiconductor
researchers to exchange information. I hope that this conference will also provide you with avaluable opportunity to exchange ideas and insights with your colleagues from around the world,
as well as to enjoy the culture and hospitality of Fukuoka. Fukuoka is also famous for its
delicious food, such as ramen, motsunabe, mentaiko, and mizutaki. How about enjoying theunique atmosphere of a food stall offering a variety of food and beverages, while engaging insemiconductor discussions with old friends? I hope that you will have a wonderful time in
Fukuoka and make lasting memories.
Many outstanding researchers with the latest data are now gathering in Fukuoka. LetŮs enjoy
fruitful discussions at ICNS after 4 years!

Organizing Committee Chair
President of the Japanese Association for Crystal Growth
Hiroshi Fujioka
The University of Tokyo

3

Preface
On behalf of the steering committee, we are delighted to welcome all participants of the 14th
International Conference on Nitride Semiconductors (ICNS-14) held in Fukuoka, Japan, on
November 12 (Sunday) - 17 (Friday), 2023. As indicated in Table I, the ICNS series wasinaugurated in 1997, although the initial two international nitride conferences were held in
Nagoya and Boston in 1995, and are recognized as the Űfirst ICNSű. The purpose of ICNS-14
is to provide a forum for scientists and engineers from universities, government institutions,and industries to meet and discuss the latest achievements and challenges concerning all aspectsof nitride growth, characterization, optical devices, and electronic devices. As of October 20th,
the number of ICNS-14 participants exceeds 1030 individuals representing 32 countries.
Table I History of ICNS

Year
1st*

City (Contrry)

1995 Nagoya (Japan), Boston (USA)Year

City (Contrry)

8th ICNS

2009

Jeju (Korea)

2nd ICNS

1997

Tokushima (Japan)

9th ICNS

2011

Glasgow (UK)

3rd ICNS

1999

Montpellier (France)

10th ICNS

2013

Washington, D.C. (USA)

4th ICNS

2001

Denver (USA)11th ICNS

2015

Peking (China)

5th ICNS

2003

Nara (Japan)

12th ICNS2017

Strasbourg (France)

6th ICNS

2005

Bremen (Germany)

13th ICNS

2019

Seattle (USA)

7th ICNS

2007

Las Vegas (USA)14th ICNS

2023

Fukuoka (Japan)* The ICNS originated from two nitride conferences “Topical Workshop on III-V Nitrides” (Nagoya,1995)
and “International Symposium on Gallium Nitride and Related Materials” on MRS （Boston, 1995）. The
nitride committee regarded the two conferences held in 1995 in Nagoya and Boston as the "first ICNS” on
November, 1995, at Boston.

We would like to express our acknowledgements. The ICNS-14 is sponsored by ŰJapan
Association for Crystal Growthű, ŰThe Japan Society of Wide Gap Semiconductorsű, ŰR032
Committee on Crystal Growth for Industrial Innovationű of Japan Society for the Promotion of
Science (JSPS), and ŰMaterials Science and Advanced Electronics Created by Singularityű ofthe JSPS KAKENHI grant. We also extend our gratitude to the supporting foundations,
Fukuoka Convention and Visitors Bureau, International Exchange Program of National
Institute of Information and Communications Technology (NICT), The Murata Science
Foundation, and ONR Global Funding. Our heartfelt appreciation goes to the sponsoring
companies, listed on a separate page.
We also convey our sincere gratitude to our plenary and invited speakers, as well as theparticipants in this conference. In closing, we wish that all the attendees relish their time in
Fukuoka, discover fresh ideas, forge new friendships, and persist in advancing the promising
future of nitride semiconductors.

Steering Committee Chair
Hideto Miyake
Mie University

4Preface
On behalf of the ICNS-14 program committee, I would like to welcome all participants fromacross the world. The purpose of ICNS-14 is to provide a forum for scientists and engineersfrom universities, government institutions, and industries to meet and discuss the latest
achievements and challenges concerning all aspects of nitride materials and devices. ICNS-14
is designed as four loosely coupled nitride workshops on growth, characterization, opticaldevices, and electronic devices.
We have collected 916 abstracts from 30 countries and regions (Asia, 541； Europe, 255;
America, 104; Middle east, 15; Oceania, 1). This large number clearly reflects the fact thatnitride material and device continue to attract attention both academia and industry. In fact, wehave noticed an increasing number of papers related to new fields, such as micro-LEDs, UVLEDs and LDs, VCSELs, and vertical electron devices.
The program of ICNS-14 was prepared in the following way. First, candidates for the plenary
and invited speakers were nominated by international advisory committee and programcommittee members and selected through a committee member vote. Then, contributed papers
were collected and reviewed to determine acceptance. Based on the authorŮs preference andcontent, the papers were categorized into out of 70 sessions, which are distributed across fivedays. Finally, a limited number of late news papers describing the most up-to date results were
accepted for two late news sessions. We have prepared three engaging ramp sessions covering
topics of particular importance in recent research developments. We also prepared a number ofBest Student Awards and Outstanding Poster Awards to encourage young researchers andstudents.
I would like to express our sincere thanks to the plenary speakers, invited speakers, rumpsession panelists, and all contributing presenters at ICNS-14. I also would like to acknowledge
the international advisory committee, program committee and all committee members for theirearnest activities and supports for ICNS-14. Without their efforts, this conference would not be
possible.
We have all the best things to facilitate fruitful discussion in Fukuoka, the best nitride
researchers, the best foods, and the best sake. I sincerely hope that the attendants will enjoy
their stay in Fukuoka, find next new ideas, and make good friend. I also hope that the conference
will contribute to a bright future of nitride semiconductors.

Program Committee Chair
Hideki Hirayama
RIKEN

5

Conference Committees
Organizing Committee

Honorary Co-Chairs:
Katsumi Kishino, Sophia University
Yasushi Nanishi, Ritsumeikan University
Akihiko Yoshikawa, Chiba University
Chair:
Hiroshi Fujioka, The University of Tokyo
Co-Chairs:

Vice-Chairs:

Members:

Jen-Inn Chyi, National Central University
Ke Xu, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS
Euijoon Yoon, Korea Institute of Energy Technology
Yasuhiko Arakawa, The University of Tokyo
Shigefusa F. Chichibu, Tohoku University
Takashi Mukai, Nichia Corporation
Susumu Noda, Kyoto University
Yasufumi Fujiwara, Osaka University
Tamotsu Hashizume, Hokkaido University
Toshiki Hikosaka, Toshiba Corporation
Satoshi Kamiyama, Meijo University
Yasuo Koide, National Institute for Materials Science
Naohiro Kuze, Asahi Kasei Corporation
Masaaki Kuzuhara, Kwansei Gakuin University
Akira Sakai, Osaka University
Shigetaka Tomiya, Nara Institute of Science and Technology
Tetsuzo Ueda, Panasonic Corporation
Yasuhisa Ushida, Toyoda Gosei Co., Ltd.

Steering Committee
Chair:

Vice Chairs:

General Affairs:

Members:

Hideto Miyake, Mie University
Yoshio Honda, Nagoya University
Motoaki Iwaya, Meijo University
Yoshihiro Kangawa, Kyushu University
Yusuke Mori, Osaka University
Atsushi Kobayashi, Tokyo University of Science
Kanako Shojiki, Kyoto University
Tomoyuki Tanikawa, Osaka University
Toru Akiyama, Mie University
Momoko Deura, Ritsumeikan University

6

Yusuke Hayashi, Osaka University
Takahiro Kawamura, Mie University
Toshiaki Kubo, Nagoya Institute of Technology
Maki Kushimoto, Nagoya University
Bei Ma, Chiba University
Takuya Maeda, The University of Tokyo
Hisashi Murakami, Tokyo University of Agriculture & Technology
Shigeyoshi Usami, Osaka University

Financial Committee
Chair:

Members:

Yusuke Mori, Osaka University
Masayuki Imanishi, Osaka University
Ryota Ishii, Kyoto University
Narihito Okada, Yamaguchi University
Taketomo Sato, Hokkaido University

Local Arrangement Committee
Chair:

Vice Chairs:

Members:

Yoshihiro Kangawa, Kyushu University
Tsutomu Araki, Ritsumeikan University
Kazuhiko Hara, Shizuoka University
Masamichi Akazawa, Hokkaido University
Manato Deki, Nagoya University
Masataka Imura, National Institute for Materials Science
Akira Kusaba, Kyushu University
Takayuki Nakano, Shizuoka University
Tomoe Yayama, Kogakuin University

Program Committee
Chair:

Vice Chairs:

General Affairs:

Hideki Hirayama, RIKEN
Yoshinao Kumagai, Tokyo University of Agriculture & Technology
Jun Suda, Nagoya University
Tetsuya Takeuchi, Meijo University
Atsushi A. Yamaguchi, Kanazawa Institute of Technology
Masahiro Horita, Nagoya University
Masafumi Jo, RIKEN
Hiroto Sekiguchi, Toyohashi University of Technology

7Jun Tatebayashi, Osaka University
Members:

Andrew A. Allerman, Sandia National Laboratories
Martin Albrecht, IKZ Berlin
Tsutomu Araki, Ritsumeikan University
Subramaniam Arulkumaran, Nanyang Technological University
Matthias Bickermann, IKZ Berlin
Julien Brault, CRHEA-CNRS
Raphaël Butté, EPFL
Enrique Calleja, Technical University of Madrid
Guillaume Cassabois, University of Montpellier
Kevin Chen, The Hong Kong University of Science and Technology
Shigefusa F. Chichibu, Tohoku University
Paul Chow, Rensselaer Polytechnic InstituteSrabanti Chowdhury, Stanford University
Soo Jin Chua, National University of Singapore
Jen-Inn Chyi, National Central University
Gilberto Curatola, Huawei Nurnberg Research Center
Armin Dadgar, Otto-von-Guericke-University Magdeburg
Aurelien David, Google
Sylvain Delage, III-V Lab
Theeradetch Detchprohm, Georgia Institute of Technology
Russell D. Dupuis, Georgia Institute of Technology
Daniel Feezell, University of New Mexico
Jaime A. Freitas Jr., Naval Research Laboratory
Hajime Fujikura, Sumitomo Chemical Co., Ltd.
Yasufumi Fujiwara, Osaka University
Hiroyuki Fukuyama, Tohoku University
Mitsuru Funato, Kyoto University
Bernard Gil, CNRS University of Montpellier
Izabella Grzegory, UNIPRESSÅsa Haglund, Chalmers University of Technology
Jung Han, Yale University
Andreas Hangleiter, TU Braunschweig
Mark Holmes, Apple Inc.
Detlef Hommel, Polish Center for Technology Development
Colin Humphreys, University of Cambridge
Yoshihiro Ishitani, Chiba University
Sergey Ivanov, Ioffe Institute
Motoaki Iwaya, Meijo University
Debdeep Jena, Cornell University
Ryuji Katayama, Osaka University
Yoichi Kawakami, Kyoto University
Stacia Keller, UC Santa Barbara
Akihiko Kikuchi, Sophia University
Jong Kyu Kim, Pohang University of Science and Technology
Michael Kneissl, TU Berlin
Kazunobu Kojima, Osaka University
Junji Kotani, Sumitomo Electric8Michael Krames, ARKESSO
Martin Kuball, University of Bristol
Kei May Lau, The Hong Kong University of Science and Technology
Charles Li, PlayNitride
Tien-Chang Lu, National Chiao Tung University
Elison Matioli, EPFL
Elke Meissner, Fraunhofer IISB
Matteo Meneghini, University of Padova
Zetian Mi, University of Michigan
Makoto Miyoshi, Nagoya Institute of Technology
Peter Moens, ON Semiconductor
Eva Monroy, CEA Grenoble
Yusuke Mori, Osaka University
Satoshi Nakazawa, Panasonic Corporation
Okhyun Nam, Korea Polytechnic University
Yasushi Nanishi, Ritsumeikan University
Digbijoy N. Nath, Indian Institute of Science
Sergei Novikov, University of Nottingham
Kazuhiro Ohkawa, KAUST
Tomás Palacios, Massachusetts Institute of Technology
Sungsoo Park, Jeonju University
Piotr Perlin, UNIPRESS
Siddha Pimputkar, Lehigh University
Siddharth Rajan, The Ohio State University
Joan Redwing, The Pennsylvania State University
Eberhard Richter, Ferdinand-Braun-Institut
Akira Sakai, Osaka University
Lars Samuelson, Lund University
Leo J. Schowalter, Nagoya University.
Ulrich Schwarz, TU Chemnitz
Bo Shen, Peking University
Jong-In Shim, Hanyang University
Keisuke Shinohara, Teledyne Technologies
Zlatko Sitar, North Carolina State University
James Speck, UC Santa Barbara
Chang Soo Suh, Texas Instruments Inc.
Masatomo Sumiya, National Institute for Materials Science
Tadek Suski, UNIPRESS
Kazuyuki Tadatomo, Yamaguchi University
Shinya Takashima, Fuji Electric Co., Ltd.
Shigetaka Tomiya, Nara Institute of Science and Technology
Chris G. Van de Walle, UC Santa Barbara
Akio Wakejima, Nagoya Institute of Technology
Xinqiang Wang, Peking University
Xuelun Wang, National Institute of Advanced Industrial Science andTechnology
Tim Wernicke, TU Berlin
Christian Wetzel, Rensselaer Polytechnic Institute
Jonathan J. Wierer, North Carolina State University
Yuh-Renn Wu, National Taiwan University9Chih-Chung Yang, National Taiwan University
Euijoon Yoon, Korea Institute of Energy Technology
Enrico Zanoni, University of Padova
Bao Ping Zhang, Xiamen University
Guoyi Zhang, Peking University

Publication Committee
Chair:

Vice Chairs:

General Affair
Members:

Yoichi Yamada, Yamaguchi University
Mitsuru Funato, Kyoto University
Ryuji Katayama, Osaka University
Kazunobu Kojima, Osaka University
Shuhei Ichikawa, Osaka University
Hideaki Murotani, National Institute Technology, Tokuyama College
Masahiro Uemukai, Osaka University

International Advisory Committee

Andrew A. Allerman, Sandia National Laboratories
Hiroshi Amano, Nagoya University
Juergen Christen, University of Magdeburg
Russell D. Dupuis, Georgia Institute of Technology
Hiroshi Fujioka, The University of Tokyo
Bernard Gil, CNRS University of Montpellier
Nicolas Grandjean, EPFL
Åsa Haglund, Chalmers University of Technology
Jung Han, Yale University
Yoichi Kawakami, Kyoto University
Asif Khan, University of South Carolina
Robert Martin, University of Strathclyde
Matteo Meneghini, University of Padova
Zetian Mi, University of Michigan
Hideto Miyake, Mie University
Shuji Nakamura, University of California-Santa Barbara
Okhyun Nam, Korea Polytechnic University
Fernando Ponce, Arizona State University
Zlatko Sitar, North Carolina State University
Tadeusz Suski, Polish Academy of Sciences
Tae-Yeon Seong, Korea University
Bo Shen, Peking University
Chih-Chung Yang, National Taiwan University
Rong Zhang, Xiamen University

10Sponsored by

The Japanese Association for Crystal Growth

The Japan Society of Wide Gap Semiconductors

R032 Committee on Crystal Growth for Industrial
Innovation

Materials Science and Advanced Electronics
Created by Singularity

Endorsed by
The Japan Society of Applied Physics

11Foundations
Fukuoka
BureauConvention&

Visitors

International Exchange Program of
National Institute of Information andCommunications Technology (NICT)The Murata Science Foundation

ONR Global Funding

12Platinum Sponsors
NICHIA CORPORATION
https://www.nichia.co.jp/en
Mitsubishi Chemical Corporation
https://www.m-chemical.co.jp/en

Gold Sponsor
TOYODA GOSEI Co., Ltd.
https://www.toyoda-gosei.com/

Silver Sponsor
Asahi Kasei Corporation
https://www.asahi-kasei.com/

Bronze Sponsors
ADVAN ENG. co., ltd.
https://www.adv-eng.co.jp/#
Fuji Electric Co., Ltd.
https://www.fujielectric.com/

13

Welcome Reception Sponsors
HexaTech, Inc.
www.hexatechinc.com
Malvern Panalytical Ltd
https://www.malvernpanalytical.com/en/

Conference Kits Sponsors
AIXTRON SE
https://www.aixtron.com/enMalvern Panalytical Ltd
https://www.malvernpanalytical.com/en
Mitsubishi Electric Corporation
https://www.mitsubishielectric.com/en
Toshiba Electronic Devices & Storage
Corporation
www.toshiba.co.jp

14Light Meal Sponsors
LayTec AG
www.laytec.de
NIKKISO GIKEN Co., Ltd.
https://www.nikkiso.com/
STR Japan K.K.
www.str-soft.com

Coffee Break Sponsors
EpiQuest, Inc.
https://www.epiquest.co.jp/
Panasonic Holdings Corporation
https://holdings.panasonic/jp/
Sumitomo Chemical Co., Ltd
https://www.sumitomochem.co.jp/english/
TAIYO NIPPON SANSOCORPORATION
https://www.mocvd.jp/en/

15VenueHilton Fukuoka Sea Hawk,
2-2-3 Jigyohama, Chuo-ku, Fukuoka-shi, 810-8650, Japan.

Taxi: Take the Fukuoka City Expressway and get off at the Momochi Exit.
Approximately a 20-minute ride from the airport.
City bus: Get on the #139 route bus bound for Fukuoka Tower & TNC Hall at
Fukuoka Airport International Terminal South bus stop. Get off at Hilton Fukuoka Sea
Hawk-mae bus stop. Approximately 40-minute ride from the airport.
Subway: Take the Fukuoka City Subway, getting off at Tojinmachi Station. The hotel
is a 19-minute walk from the station. Approximately 16-minute subway ride from theairport.

16

Lunch Map

17

Social Activities
Welcome Reception
Sunday evening 6:00 PM, November 12, ARGOS D-F
All participants and accompanying persons are invited, free of charge, to join it.

Women in Nitrides Event

Tuesday lunch time, November 14, ARGOS DThis event is the third of its kind after Women in Nitrides at ICNS-13 in Seattle and at
IWN2022 in Berlin. It will feature a panel discussion of established and experienced
researchers reporting their experiences to inspire the scientific and professional
careers of women working with nitride semiconductors. The event will provide a relaxedatmosphere to build and expand your network.
If you have registered for the event, please bring your ticket with you to join it.

Excursion

Wednesday afternoon, November 15,
Meeting point： Group Entrance on the 1st floor of the Hilton Fukuoka Sea Hawk at
12:00. If you have registered for the event, please come to the meeting point with yourticket.
The conference will organize two tour courses, A and B to enjoy open discussion withsocial activities. The buses are different for these courses, so please be sure not totake the wrong bus.
The Excursions are in part supported by the Japan Tourism Agency.
[Course A]
Lunch at Grand Empire Hotel >> Visit to Dazaifu Tenmangu >> Grand Sumo spectator◆Dazaifu Tenmangu

Photo provided by Fukuoka Prefecture
Tourism Association

Dazaifu Tenmangu, enshrining Sugawara
Michizane or “Tenjin-sama”, the deity oflearning, culture and the arts for more than
1,100 years, is one of Japan’s most important
Shinto shrines. In the precinct, you will see
two ponds, an arched bridge, a treasure
house, a main hall with cypress bark roof andso on. The main hall, rebuilt in 1591, iscurrently undergoing its first major renovationin 124 years before “Shikinen-Taisai” in 2027,
and a temporary hall has been set up. On
the roof of the temporary hall, 46 kinds ofplants have been planted.

18◆Grand Sumo spectator
The tournaments of Grand “Sumo”, Japan's
national sport, are held six times a year.
Among them, the November Tournament
will be held in Fukuoka from November 12
to 26. Taking this opportunity, you will watch
traditional and powerful Sumo matches
between Sumo wrestlers in this course.

[Course B]
Lunch at an oyster barbecue house >> Japanese Sake brewery tours and tastings◆Oyster barbecue house along Kafuri Bay
Oysters from Kafuri Bay in Itoshima City
grow while absorbing plenty of nutrientsfrom the sea, which is blessed withconditions conducive to growing oysters. At
this oyster house, you will enjoy your lunch
by grilling fresh oysters, clams, and othershellfish by yourself.
◆”Hana-no-Tsuyu” Japanese Sake brewery
Japanese Sake brewing has long thrived in
Jojima, Kurume City. ”Hana-no-Tsuyu”
brewery is a long-established Sake brewerywith a history of more than 250 years among
the many breweries in this region. You will
feel the atmosphere of a traditional Sake
brewery and learn how Sake is brewed. At
the end of the tour, you can also enjoy tasting
several types of Sake.

19

Banquet

Thursday evening 7:00 PM, November 16, ARGOS D-F
Local Japanese Sake, wine, and delicious course meals will be served. During the
Banquet, members of Hakata Geisha girls, "Hakata Geigi" will perform a traditional
Japanese dance. “Yagyu Shinkage-ryu” swordsmanship will also be performed.
If you have registered for the event, please bring your ticket with you to join it.

Photo provided by Fukuoka City

Student Event

Thursday evening 7:00 PM, November 16, NAVISThis event is organized by students from various universities across Japan.
Participants can enjoy discussions along with meals and beverages. Events such as
bingo with prizes, traditional Japanese art, and many more are planned.
If you have registered for the event, please bring your ticket with you to join it.

20Special Issue in physica status solidi
Following a long row of successful publications from previous meetings since 2002,
physica status solidi is once again planning to publish a special issue highlighting themost exciting new results presented at this year's 14th International Conference on
Nitride Semiconductors. The papers will be divided among pss (RRL), pss (a) and pss(b). This will make your important works available to a large international audience
quickly. Plenary and invited speakers are invited to submit their articles to pss (RRL).
Both Letter-style Research Articles as well as Reviews are acceptable. Contributed
presenters are invited to submit their Research Articles to pss (a)/(b).
General information
pss(RRL): https://onlinelibrary.wiley.com/page/journal/18626270/homepage/authorguidelines
pss (a): https://onlinelibrary.wiley.com/page/journal/18626319/homepage/authorguidelines
pss (b): https://onlinelibrary.wiley.com/page/journal/15213951/homepage/authorguidelines
Online submission
pss(RRL): www.editorialmanager.com/pssrrl-journal
pss (a): www.editorialmanager.com/pssa-journal
pss (b): www.editorialmanager.com/pssb-journal
Submitted manuscripts will undergo editorial evaluation and subsequent peer review.
According to the editorial policy of pss, two positive recommendations by independent
reviewers are a prerequisite of acceptance. Peer review and publication occur rapidly
on individual manuscript basis. Published in Wiley Online Library Accepted Articles
and Early View shortly after acceptance, your article is citable with DOI or article
number immediately; hence there is no waiting for the remainder of the contributions.
When all articles are complete, the topical section will be assembled in regular monthly
issues of pss. The clustering of related articles raises the visibility of these articles
significantly, and we are confident that this will become a quality publication reflectedby high article access and citation numbers. We look forward to receiving yourcontributions!
For more detail, visit our website (https://icns14.jp/publication.html).

Important Date
December 15, 2023: Deadline of Submission

21

Presentation guidelines,
Plenary and invited speakers

Presentation Guidelines
Allotted time for each presentation

Plenary talk: 40 minutes
Invited talk: 25 minutes (including 5 minute Q&A time)
Contributed oral talk: 15 minutes (including 3 minute Q&A time)
Poster presentation: 110 minutes

Guideline for plenary/invited/contributed oral presenters

A projection laser pointer will be supplied for oral presentations. We request that
presenters use their own laptops equipped with HDMI video connectors. It is
recommended for oral presenters to prepare slides in the widescreen (16:9)
format. We kindly ask the oral presenters to perform a computer check during
the break before their session.

Guideline for poster presenters

Boards and push pins will be provided for poster presenters. The boards will fit
posters up to vertical A0 format (W841 mm x H1189 mm). Please display the
paper title, author names, and affiliations at the top of the posters. The
presenters should stand in front of their posters to discuss their results withattendees during the allotted session time.
Posters may be set up from the morning of the day of the poster session. They
should be taken down within 1 hour after the session ends. The posters that areleft until the end of the day will be discarded by the program committee.

Photography and recording policy

Photography or video/audio recording in the presentation areas without
permission from the committee is strictly prohibited.

Award

Young scientists can apply for the "Best Student Award" and/or "Outstanding
Poster Award." These awards are presented to young scientists who
demonstrate outstanding achievements in their paper, including abstract andpresentation, and expect to make significant contributions in the nitride
semiconductor field. Each award includes a certificate signed by the conference
chair. Some of the winners (for both awards) of highly ranked papers will beawarded in person during the conference.

25

Rump Sessions
19:00— Tuesday, November 14, 2023
Room: Argos D, E, and F

Rump Session 1 (Room: Argos D)
Vertical GaN Power Devices: A Look Back and Ahead at Ongoing Challenges

GaN lateral power devices have been explosively adopted in USB chargers and are achieving
great success in the field of power electronics. On the other hand, GaN vertical power devices
are expected to have benefits such as high voltage, large current, and avalanche capability.
However, there have been various technical challenges to realize these advantages, and it has
been a struggle. Over the past 10 years, various research groups have made continuous efforts,
and one by one, the challenges are being resolved. As seen in this conference, significant
progress has been reported in the most difficult challenges, such as ion implantation doping and
MOS channel technologies. In this rump session, we will discuss the technologicaladvancements of GaN vertical power devices so far and the prospects for the future, as well as
discuss new ideas and initiatives different from the conventional ones.

Rump Session 2 (Room: Argos E)
Will deep UV LEDs and LDs become as good as blue LEDs and LDs by
evolution or revolution?

Blue LEDs are the most efficient light source in the world with wall plug efficiencies exceeding
80%. Similarly, blue laser diodes exhibit low threshold, high efficiencies and long lifetimes.
Deep UV LEDs and LDs present tremendous challenges in terms of epilayer growth, device
fabrication and packaging. On the other hand, we find many similarities of these devices, letting
us believe that one day deep UV LEDs and LDs can be as efficient and stable
as their blue counterparts. In this rump session we want to discuss evolution
or revolution will pave the way to a bright future (or if physics will preventthis). This rump session will use the Sugukiku/imakiku network survey
system. Online voting during the rump session ca be accessed via
https://sugukiku.com/en/ or the QR code.

Rump Session 3 (Room: Argos F)
How nitrides put microLEDs forward?

MicroLED is now the one of the hottest topic among researchers in this field. Rumors tell kindsof future products will be released with it and analysts predict its market grow with high CAGR
of >80% to reach a size of >20B USD in several years. Accordingly, this session provides
discussion around the latest progress and future of microLED technologies through active
discussion to relate them to nitride research, for example, a variety of ways toward red emission
from nitride semiconductors that expected to outstrip the classic AsP-based emitters, andmonolithic integration that is essential to future AR/VR displays. The panelists are selectedamong the top-ranked attendees of ICNS-14, to make this hottest topic much hotter than ever!!!

26

Plenary, Invited speakers
Plenary Speakers

Hiroshi Amano (Nagoya University, Japan)
Tribute to our predecessor, the late Professor Isamu Akasaki, and the role ofnitrides in establishing an earth-friendly, comfortable, convenient and peoplefriendly society
Aurélien David (Google, USA)
Revisiting the physics of III-Nitrides LEDs: myths and facts
Åsa Haglund (Chalmers University of Technology, Sweden)
Vertical-cavity surface-emitting lasers at the end of the rainbow
Debdeep Jena (Cornell University, USA)
Controlling electronic polarization in polar and ferroelectric
semiconductor heterostructures for electronic and photonic devices

nitrideElison Matioli (EPFL, Switzerland)
Pushing the limits of GaN electronics: Emerging Technologies for HighPerformance Devices
Takashi Mukai (Nichia Corporation, Japan)
Progress and future prospects of InGaN-based high-efficiency, high-power laser
diodesKen Nakata (Sumitomo Electric, Japan)
Recent Progress of GaN HEMT for Future Communication

Invited Speakers
Robert Armitage (Lumileds, USA)
Recent advances in nitride LED technology for green-to-red wavelengths
Michal Bockowski (Institute of High Pressure Physics, Poland)
Towards GaN Substrates for High-power Electronic Devices
Julien Brault (Côte d'Azur University-CRHEA-CNRS, France)
Growth and transfer of quantum dots UV heterostructure emitting at 280nm
using van der Waals epitaxy on hBN
Frank Brunner (Ferdinand-Braun-Institut, Germany)
Vertical GaN Power Transistors on Low-Cost Substrates: Opportunities andChallenges

27

Guillaume Cassabois (University of Montpellier, France)
Polytypism in hexagonal boron nitride: an optical study
Kevin Chen (The Hong Kong University of Science and Technology, China)
Processing and design techniques for reliability enhancement of lateral GaN
HEMTs
Jr-Tai Chen (SweGaN, Sweden)
Progress of buffer-free GaN-on-SiC HEMT heterostructures for RF and power
applications
Zhaoying Chen (Peking University, China)
High-Efficiency InGaN Red Mini/Micro-LEDs on Sapphire Toward Full-Color
Nitride Displays
Shigefusa F. Chichibu (Tohoku University, Japan)
Impacts of vacancy clusters on the luminescence dynamics in Mg-implanted
GaN on GaN structures
Srabanti Chowdhury (Stanford University, USA)On making GaN more efficient for RF applications
Juergen Christen (University of Magdeburg, Germany)
GaN Quantum Dots in Resonant Cavity Micropillars as deep UV Single Photon
Sources
Steven P. DenBaars (University of California, Santa Barbara, USA)
Recent Advances in III-Nitrides for MicroLEDs and Laser Diodes
Theeradetch Detchprohm (Georgia Institute of Technology, USA)
Development of AlGaN based deep UV avalanche photodetectors toward theirintrinsic characteristics
Alan Doolittle (Georgia Institute of Technology, USA)
Semiconducting AlN Electrical Devices
Hajime Fujikura (Sumitomo Chemical, Japan)
Recent progress of HVPE-based GaN on GaN technology
Mitsuru Funato (Kyoto University, Japan)
InGaN-based LEDs on arbitrary three-dimensional GaN templates toward
tailored spectral control
Nicolas Grandjean (EPFL, Switzerland)
Nanoscale investigation of point defects and carrier dynamics in InGaN/GaN
quantum wells
Thierry Guillet (University of Montpellier, France)
GaN-based Waveguide polariton lasers: from quasi-CW to mode-locked lasers

28

Tatsushi Hamaguchi (Sony Group Corporation, Japan)
Polarization and Modes control of GaN-based VCSELs with curved mirror
Robert Hamwey (University of California, Santa Barbara, USA)
Low Sheet Resistance N-Polar InAlGaN/GaN HEMT
Tamotsu Hashizume (Nagoya University and Hokkaido University, Japan)
MOS interface technologies for high-power and high-frequency GaN transistors
Masahiro Horita (Nagoya University, Japan)
Characterization of nitrogen-displacement-related traps in GaN
Ryota Ishii (Kyoto University, Japan)
Fundamental optical properties
spectroscopy

of

AlN

revealedbydeep-ultraviolet

Motoaki Iwaya (Meijo University, Japan)
Progress in the development of UV-B laser diodes fabricated on sapphire
substrates
Hailing Jiang (Peking University, China)
Atomic Scale Visualization Defect Induced Localized Vibration in III-Nitrides
Tetsu Kachi (Nagoya University, Japan)
Vertical GaN Power Devices Using Selective Area Doping with Ion Implantation
Masakazu Kanechika (Nagoya University, Japan)
A High Channel Mobility and a Normally-off Operation of m-plane GaN Trench
MOSFET Using an AlSiO/AlN Gate Stack Deposited by ALD
Ryuji Katayama (Osaka University, Japan)
Nitride-Semiconductor-based Wavelength Converters
Jong-Kyu Kim (Pohang University of Science and Technology, Korea)
Observation of Suspended AA-Stacked Hexagonal Boron Nitride Grown on GaN
Substrate by Metal-Organic Chemical Vapor Deposition
Emmanouil Kioupakis (University of Michigan, USA)
Impact of alloy disorder and polarization fields on the efficiency andluminescence spectrum of visible LEDs from predictive calculations
Hirotsugu Kobayashi (Asahi Kasei Corporation, Japan)
Far UV-C LEDs on AlN substrates with high wall-plug efficiency and long lifetime
Tim Kolbe (Ferdinand-Braun-Institut, Germany)
Advances in the epitaxial growth of far-ultraviolet C light emitting diodes
Takao Kozaka (University of Tokyo, Japan)
Fabrication of AlN/AlGaN/AlN multi-channel structures with sputtering-regrownhighly degenerate n+-GaN ohmic contacts

29

Martin Kuball (University of Bristol, UK)
GaN-on-Diamond Transistors: Challenges and Opportunities
Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan)
High-speed growth of thick AlN homoepitaxial layers by HVPE for mass
production of high-quality AlN wafers
Maki Kushimoto (Nagoya University, Japan)
Recent Progress of Deep Ultraviolet Laser Diodes on AlN substrate
Jonas Lähnemann (Paul Drude Institute, Germany)
Revisiting the determination of the carrier diffusion length in GaN from
cathodoluminescence spectroscopy from cathodoluminescence spectroscopy
Tzu-Yi Lee (National Yang Ming Chiao Tung University, Taiwan)
Introduction to High-Speed Visible Light Communication Using Yellow-Greenand Red Micro-LEDs
Ying-Tsang Liu (PlayNitride, Taiwan)
Performance of MicroLED Chip and Display for Emerging Applications
Matteo Meneghini (University of Padova, Italy)
GaN Vertical Devices: challenges for high performance and stability
Zetian Mi (University of Michigan, USA)
Ferroelectric Nitride Semiconductors: Epitaxy, Properties, and Emerging Device
Applications
Umesh Mishra (University of California, Santa Barbara, USA)GaN power electronics: Game on!
Yusuke Mori (Osaka University, Japan)
Recent Progress of Bulk GaN Growth by Na-Flux Method
Okhyun Nam (Tech University of Korea, Korea)
Growth of AlGaN/AlN based power electronic devices
Shugo Nitta (Nagoya University, Japan)
Catalytic enhancement of ammonia reaction by trimethylgallium and its
reactants in MOVPE analyzed by TOF-MS isotope tracking
Susumu Noda (Kyoto University, Japan)
Recent progress in photonic-crystal surface-emitting lasers
Kazuhiro Ohkawa (King Abdullah University of Science and Technology, Saudi Arabia)
InGaN-based red micro-LEDs via micro-flow-channel metalorganic vapor-phase
epitaxy
Rachel Oliver (University of Cambridge, UK)
Insights into porous GaN from electron microscopy

30

Tomas Palacios (Massachusetts Institute of Technology, USA)
III-Nitride Electronics for Extreme Environment Operation
Yoshiki Saito (Toyoda Gosei, Japan)
Recent Developments for High Efficiency for Deep UV LEDs
Chandrashekhar Savant (Cornell University, USA)First Demonstration of Ferroelectricity and High-K Dielectric Constant in
Ultrawide Bandgap AlBN MBE Films
Leo Schowalter (Nagoya University, Japan)
The development of pseudomorphic AlGaN on native AlN substrates for UVC
and far UVC device applications
Bo Shen (Peking University, China)
Recent progress on the epitaxial growth, doping of AlGaN with high Al fraction
and the fabrication of Deep UV LEDs
Keisuke Shinohara (Teledyne Technologies, USA)
Scaling Challenges in Millimeter-Wave GaN HEMTs for High-Power, HighEfficiency, and High-Linearity Operation
Zlatko Sitar (North Carolina State University, USA)
Unlocking the AlN technology one step at a time
James S. Speck (University of California, Santa Barbara, USA)
Progress in Electroemission Spectroscopy of GaN LEDs
Takashi Taniguchi (National Institute for Materials Science, Japan)
Boron Nitride single crystals obtained under high pressure and their impurity
controlKenjiro Uesugi (Mie University, Japan)
Progress in UV-C LEDs on Face-to-Face Annealed Sputter-Deposited AlN
Templates
Chris Van de Walle (University of California, Santa Barbara, USA)
Defect-assisted nonradiative recombination in nitrides
Xinqiang Wang (Peking University, China)
Quasi-van der Waals epitaxy of III-nitride semiconductors on graphene
Claude Weisbuch (University of California, Santa Barbara, USA)
Physics of disorder and carrier localization in nitride alloys
Tim Wernicke (Technische Universität Berlin, Germany)
Recent Progress GaN based microled for visible light communication
Thomas Wunderer (PARC, USA)
Hybrid Photonic Integrated III-N Chip Lasers

31

Atsushi Yamada (Sumitomo Electric Inc. Japan)
Current status of high output power GaN-based HEMTs on AlN substrates
Mohamed Yassine (University of Freiburg, Germany)
Correct modeling of polarization in wz-AlScN

32

Session Chair
Monday, November 13, 2023
Bernard Gil

Hideki Hirayama

Jen-Inn Chyi

Hiroshi Fujioka

14:20-15:45

Debdeep Jena

Jun Suda

GaN I

14:20-15:45

Michal Bockowski

Yohei Otoki

Far UVC LEDs I

14:20-15:45

Motoaki Iwaya

Markus Weyers

CH1:

InGaN optical I

14:20-15:45

Shigefusa F. Chichibu

Nicolas Grandjean

CH2:

Sc-containing III-Nitrides

14:20-15:35

Kazuhiko Hara

Chris Van de Walle

JT1:

Visible Optical Devices

14:20-15:35

Akihiko Kikuchi

Lars Samuelson

ED2:

Vertical Power I

17:35-19:00

Frank Brunner

Jun Suda

PL1:

Plenary I

9:30-12:20

ED1:

Lateral Power I

GR1:
OD1:

GR2:

GaN II

17:35-19:00

Hisashi Murakami

Xinqiang Wang

OD2:

Micro LEDs: Full-Colors

17:35-19:00

Yasufumi Fujiwara

Baoping Zhang

CH3:

InGaN optical II

17:35-19:00

Aurelien David

Yoichi Kawakami

JT2:

UV Optical Devices

17:35-18:50

Masataka Imura

Robert Martin

GR3:

Doping and Defects

17:35-18:50

Jaime Freitas, Jr.

Shugo Nitta

Tuesday, November 14, 2023
ED3:

Lateral Power II / ICs

8:30-10:15

Elison Matioli

Takuma Nanjo

CH4:

Characterization for Electron
Devices I

8:30-10:25

Masahiro Horita

Filip Tumisto

OD3:

VCSELs8:30-10:10

Åsa Haglund

Masaru Kuramoto

CH5:

GaN

8:30-10:25

Andreas Hangleiter

Takao Oto

GR4:

AlN I

8:30-10:25

Satoshi Kamiyama

Zlatko Sitar

GR5:

MOCVD

8:30-10:25

Ramon Collazo

Yoshio Honda

ED4:

Vertical Power II

10:55-12:35

Katsunori Ueno

Shigeyoshi Usami

CH6:

GaN:Mg

10:55-12:50

Juergen Christen

Shuhei Ichikawa

OD4:Visible LEDs

10:55-12:45

Tatsushi Hamaguchi

Susumu Noda

LN1:

Late News I

10:55-12:50

Subramaniam Arulkumaran

Akio Wakejima

GR6:

AlGaN I

10:55-12:50

Michael Kneissl

Narihito Okada

GR7:

Electron Devices

10:55-12:45

Alan Doolittle

Maki Kushimoto

ED5:

MOS Interface / MOSFETs

14:50-17:00

Masamichi Akazawa

Tohru Oka

CH7:

Characterization for Electron
Devices II

14:50-16:45

Yasuo Koide

Matteo Meneghini

LN2:

Late News II

14:50-16:50

Armin Dadgar

Ryota Ishii

OD5:UV Lasers

14:50-16:40

Raphaël Butté

Yoshiki Saito

GR8:

AlGaN II

14:50-16:45

Tomasz Sochacki

Kenjiro Uesugi

GR9:

MBE and Sputtering

14:50-16:45

Julien Brault

Takayuki Nakano

Wednesday, November 15, 2023
ED6:

RF I

8:30-9:55

Yuji Ando

Debdeep Jena

GR10:

InGaN I

8:30-9:55

Kazuhiro Ohkawa

James S. SpeckOD6:

Far UVC LEDs II

8:30-9:55

Hirotsugu Kobayashi

Tim Kolbe

OD7:

PhC and nanowires

8:30-9:55

Katsumi KishinoMichael Krames

CH8:

Mirco- and Nanoscopic Analysis

8:30-10:00

Rachel Oliver

Akira Sakai

ED7:

Vertical Power III

8:30-9:55

Andrew A. Allerman

Jun Suda

33

RF II / New Materials andStructures I

10:25-11:45

Tomas Palacios

Akio Wakejima

GR11:

InGaN II

10:25-11:50

Mitsuru Funato

Piotr Perlin

OD8:

Micro LEDs: Process

10:25-11:50

Robert Armitage

Takashi Matsuoka

OD9:Photodetectors

10:25-11:35

Koichi Okamoto

Hiroto Sekiguchi

CH9:

AlGaN I

10:25-11:50

Bo ShenZiyi Zhang

JT3:

Novel Materials and Devices

10:25-11:40

Vanya Darakchieva

Kohei Shima

ED8:

Thursday, November 16, 2023
ED9:

RF III

8:30-10:15

Farid Medjdoub

Keisuke Shinohara

GR12:

Bulk GaN

8:30-10:25

Hajime Fujikura

Siddha Pimputkar

CH10:

InGaN Optical III

8:30-10:20

Guillaume Cassabois

Ryuji Katayama

OD10:

Novel Optical Devices

8:30-10:25

Jong Kyu Kim

Atsushi Nishikawa

GR13:

Sc-containing III-Nitrides

8:30-10:25

Atsushi Kobayashi

Zetian Mi

ED10:

Thermal Management

8:30-10:35

Manato Deki

Tomas Palacios

ED11:

RF IV

10:55-12:20

Sravanti Chowdhury

Atsushi Yamada

GR14:

Nanostructures and New GrowthTechniques

10:55-12:20

Detlef Hommel

Kazuyuki Tadatomo

CH11:

AlGaN II

10:55-12:20

Momoko Deura

Emmanouil Kioupakis

OD11:

Micro LEDs: Novel Structures

10:55-12:20

Theeradetch Detchprohm

Koh Matsumoto

CH12:

BN

10:55-12:20

Takashi Taniguchi

Christian Wetzel

ED12:

Device Process

10:55-12:25

Kevin Chen

Masakazu Kanechika

ED13:

New Materials and Structures II

14:25-16:20

Junji Kotani

Takuya Maeda

GR15:

Bulk AlN

14:25-16:20

Hiroyuki Fukuyama

Elke Messner

CH13:

Quantum Electronics

14:25-16:15

Yoshihiro Ishitani

Claude Weisbuch

OD12:

Visible Lasers

14:25-16:20

Thierry Guillet

Masahiro Uemukai

GR16:

BN

14:25-16:20

Izabella Grzegory

Yoshitaka Taniyasu

ED14:

Reliability

14:25-16:20

Martin Kuball

Shinya Takashima

Friday, November 17, 2023
OD13:

UV LEDs

8:30-10:10

Masafumi Jo

Tim Wernicke

GR17:

GaN III

8:30-10:10

Okhyun Nam

Tetsuo Narita

OD14:

Micro LEDs: Passivation

8:30-10:00

Bruno Daudin

Makoto Miyoshi

CH14:

Nanostructures

8:30-10:00

Martin Feneberg

Shigetaka Tomiya

CH15:

Defect and Phonon

8:30-10:10

Yong-Hoon Cho

Kazunobu Kojima

ED15:

Novel Electron Devices

8:30-9:45

Yuji Ando

Taketomo Sato

OD15:

Micro LEDs: on Si

10:40-12:05

Yun-Li Li

Yasushi Nanishi

GR18:

AlN II

10:40-12:00

Yusuke Mori

Leo Schowalter

OD16:

Waveguides and SHG

10:40-12:05

Takao Miyajima

Thomas Wunderer

CH16:Light Emitters

10:40-11:55

Ulrich Schwarz

Tomoyuki Tanikawa

CH17:

GaN and AlN

10:40-12:10

Frank Bertram

Masatomo Sumiya

ED16:

Transport

10:40-11:55

Tetsuo Narita

Jun Suda

PL2:

Plenary

14:10-16:50

Hideki Hirayama

Ke Xu

Yoshihiro Kangawa

Hideto Miyake

34Technical program

The 14th International Conference on Nitride Semiconductors (ICNS-14)

November 13(Mon)

Opening
Argos D-F

November 13 (Mon) 9:00 -9:30

Argos D-F

November 13 (Mon) 9:30 -12:20

PL: Plenary
Chair : Bernard Gil, Hideki Hirayama, Hiroshi Fujioka, Jen-Inn Chyi

PL-1 （Plenary）

9:30 - 10:30

Tribute to our predecessor, the late Professor Isamu Akasaki, and the role of nitrides
in establishing an earth-friendly, comfortable, convenient and people-friendly
society
Hiroshi Amano1
1
Nagoya University, JapanBreak

10:30 -11:00

PL-2 （Plenary）

11:00 - 11:40

Controlling electronic polarization in polar and ferroelectric nitride semiconductor
heterostructures for electronic and photonic devices
Debdeep Jena1
1
Cornell University, United States of America

PL-3 （Plenary）

11:40 - 12:20

Pushing the limits of GaN electronics: Emerging Technologies for HighPerformance Devices
Elison Matioli11Ecole Polytechnique Federale de Lausanne (EPFL), Switzerland

Lunch

ED1: Lateral Power

12:20 -14:20

I
Argos D

November 13 (Mon) 14:20 -15:45

Chair : Debdeep Jena, Jun Suda

ED1-1 （Invited）

GaN Power Electronics: Game on!
Umesh K Mishra1
1
UC Santa Barbara/Transphorm, United States of America

14:20 - 14:45

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED1-2 （Oral）

14:45 - 15:00

Improved robustness of p-GaN gate HEMTs by doping profile engineering
Matteo Borga1, Niels Posthuma1, Anurag Vohra1, Benoit Bakeroot2, Stefaan Decoutere1
1imec, Belgium, 2 imec, CMST and Gent University, Belgium

ED1-3 （Oral）

15:00 - 15:15

Lateral p-type GaN Schottky barrier diode using annealed Mg ohmic contact layer
on low-Mg-concentration p-GaN
Shun Lu1, Manato Deki2, Takeru Kumabe1, Jia Wang3,4, Kazuki Ohnishi3, Hirotaka Watanabe3, Shugo Nitta3,
Yoshio Honda3, Hiroshi Amano2,3,4
1
Graduate School of Engineering, Nagoya University, Japan, 2 Deep Tech Serial Innovation Center,
Nagoya University, Japan, 3 Institute of Materials and Systems for Sustainability, Nagoya University, Japan,
4
Institute for Advanced Research, Nagoya University, Japan

ED1-4 （Oral）

15:15 - 15:30

High-VTH E-mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability
Enabled by Mg-Doped p-GaN Engineering
Ke Le Wu2, Yang Yuan Xia2, Heng Yi Li2, Gang Ting Zhu2, Feng Zhou1, Zong Wei Xu1, Fang Fang Ren1,
Dong Zhou1, Jun Dun Chen1, Rong Zhang1, Dou You Zheng1, Hai Lu1
1Nanjing University, China, 2 CorEnergy Semiconductor Company Ltd, China

ED1-5 （Oral）

15:30 - 15:45

Electron State Analysis under Al2O3 Gate Oxide film in EID AlGaN/GaN MOSHEMT
Takuma Nanjo1, Akira Kiyoi1, Takashi Imazawa1, Masayuki Furuhashi1, Kazuyasu Nishikawa1, Takashi
Egawa2
1
Mitsubishi electric corporation, Japan, 2 Nagoya Inst. of Tech, Japan

GR1: GaN I
Argos E

November 13 (Mon) 14:20 -15:45

Chair : Michal Bockowski, Yohei Otoki

GR1-1 （Invited）

14:20 - 14:45

Recent progress of HVPE-based GaN on GaN technology
Hajime Fujikura1, Taichiro Konno1, Takeshi Kimura1, Shota Kaneki1, Tetsuji Fujimoto1, Toshihisa Inoue1
1
Sumitomo Chemical Co. Ltd., Japan

GR1-2 （Oral）

14:45 - 15:00

Large dislocation reduction in N-polar GaN by wet-etch and regrowth
Pietro Pampili1,3, Vitaly Z Zubialevich1, Markus Pristovsek3, Peter J Parbrook1,2
1
Tyndall National Institute, Ireland, 2 School of Engineering, University College Cork, Ireland, 3 CIFRE,IMASS, Nagoya University, Japan

GR1-3 （Oral）

15:00 - 15:15

Realization of high-resistive Ni-doped GaN crystal by hydride vapor phase epitaxy
Takafumi Odani1, Yuichi Oshima2, Hirotaka Ikeda1, Tae Mochizuki1, Satoru Izumisawa1
1
Mitsubishi Chemical Corporation, Japan, 2 National Institute for Materials Science, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR1-4 （Oral）

15:15 - 15:30

HVPE growth of thick Sn-doped GaN layers for preparing low-resistivity n-type
GaN substrates
Kansuke Hamasaki1, Kazuki Ohnishi2, Shugo Nitta2, Naoki Fujimoto2, Hirotaka Watanabe2, Yoshio
Honda2,3,4, Hiroshi Amano2,3,4
1
Department of Electronics, Nagoya University, Japan, 2 Institute of Materials and Systems for
Sustainability, Nagoya University, Japan, 3 Deep Tech Serial Innovation Center, Nagoya University, Japan,
4
Institute for Advanced Research, Nagoya University, Japan

GR1-5 （Oral）

15:30 - 15:45

Fairly high temperature growth of GaN thick layers by Cl2-based HVPE
Hisashi Murakami1, Xingxing Pan1, Kota Nemoto1, Eiji Hase2, Kentaro Nagamatsu2
1
Tokyo University of Agriculture and Technology, Japan, 2 Tokushima University, Japan

OD1: Far UVC LEDs I
Arogs F

November 13 (Mon) 14:20 -15:45

Chair : Motoaki Iwaya, Markus Weyers

OD1-1 （Invited）

14:20 - 14:45

Far UV-C LEDs on AlN substrates with high wall-plug efficiency and long lifetime
Hirotsugu Kobayashi1, Kosuke Sato1, Yusuke Okuaki1, TaeGi Lee1, Hiromasa Goto1, Naohiro Kuze1
1
Asahi Kasei Corporation, Japan

OD1-2 （Oral）

14:45 - 15:00

Demonstration of 200 mW Power LED Panel with 230 nm AlGaN far-UVC LEDs
and Parabolic Mirror
Hiroyuki Oogami1, Kengo Mouri1, Hirokazu Kawashima1, Yasushi Iwaisako1, Yukio Kashima2, Eriko
Matsuura2, Noritoshi Maeda2, Ajmal Khan2, Junya Yoshinaga3, Keitaro Ikejiri3, Syuuichi Koseki3, Hideki
Hirayama2
1
Nippon Tungsten, Japan, 2 RIKEN, Japan, 3 Taiyo Nippon Sanso, Japan

OD1-3 （Oral）

15:00 - 15:15

Development of a multi-band localization landscape model with a simplified kp
model considering strain in UVC-LEDs simulation for TE/TM ratio
Hao Lee1, Yu-Chieh Chang1, Claude Weisbuch2,3, Marcel Filoche4, James S Speck3, Yuh-Renn Wu1
1
National Taiwan University, Taiwan, 2 École Polytechnique, CNRS, Institut Polytechnique de Paris,
France, 3 University of California, Santa Barbara, United States of America, 4 ESPCI Paris, Université
PSL, France

OD1-4 （Oral）

15:15 - 15:30

Realization of EQE 0.008 % operation in 221.5 nm AlGaN far-UVC LED
Yuki Nakamura1,2, Kou Sumishi1,3, Sachie Fujikawa2,1, Hiroyuki Yaguchi2, Akira Endoh3, Hiroki Fujishiro3,
Yasushi Iwaisako4, Hideki Hirayama1
1
RIKEN, Japan, 2 Saitama University, Japan, 3 Tokyo University of Science, Japan, 4 Nippon Tungsten,Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD1-5 （Oral）

15:30 - 15:45

Effect of the quantum well number on the efficiency and lifetime of AlGaN-based
233 nm and 226 nm far-UVC LEDs
Marcel Schilling1, Jan Ruschel2, Hyun Kyong Cho2, Jens Rass2, Sven Einfeldt2, Tim Wernicke1, Michael
Kneissl1
1
Technische Universität Berlin, 10623 Berlin, Germany, 2 Ferdinand-Braun-Institut (FBH), 12489 Berlin,
Germany

CH1: InGaN Optical I
Navis A

November 13 (Mon) 14:20 -15:45

Chair : Shigefusa F. Chichibu, Nicolas Grandjean

CH1-1 （Invited）

14:20 - 14:45

Impact of alloy disorder and polarization fields on the efficiency and luminescence
spectrum of visible LEDs from predictive calculations
Nick Pant1, Emmanouil Kioupakis1
1
University of Michigan, United States of America

CH1-2 （Oral）

14:45 - 15:00

Surface carrier lifetime of (0001) InGaN assessed by time-resolved photoemission
spectroscopy
Shuhei Ichikawa1,2, Yoshinobu Matsuda3, Heishiroh Dojo1, Mitsuru Funato3, Yoichi Kawakami3, Kazunobu
Kojima1
1
Graduate School of Engineering, Osaka University, Japan, 2 Research Center for UHVEM, Osaka
University, Japan, 3 Kyoto University, Japan

CH1-3 （Oral）

15:00 - 15:15

Correlative micro-photoluminescence spectroscopy on hybrid quantum-well InGaN
red LEDs
Zhaozong Zhang1, Ryota Ishii1, Kanako Shojiki1, Mitsuru Funato1, Daisuke Iida2, Kazuhiro Ohkawa2,
Yoichi Kawakami1
1
Kyoto University, Japan, 2 King Abdullah University of Science and Technology, Saudi Arabia

CH1-4 （Oral）

15:15 - 15:30

Improvement of Optical Properties of InGaN-based Red Multiple Quantum Wells
Xin Hou1, Tao Yang1, Shao-sheng Fan1, Huan Xu1, Daisuke Iida2, Yang Mei1, Lei-Ying Ying1, Zhi-Wei
Zheng1, Hao Long1, Bao-Ping Zhang1, Kazuhiro Ohkawa1,2
1Xiamen university, China, 2King Abdullah University of Science and Technology (KAUST), Saudi Arabia

CH1-5 （Oral）

15:30 - 15:45

Parameter-Free Calculation for the Optical Band-Gap Energies of InGaN
Takashi Matsuoka1, Yoshiyuki Kawazoe1, Talgat M Inerbaev2
1
New Industry Creation Hatchery Center, Tohoku University, Japan, 2 L.N. Gumilyov Eurasian National
University, Kazakhstan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH2: Sc-containing III-Nitrides
Navis B

November 13 (Mon) 14:20 -15:35

Chair : Kazuhiko Hara, Chris Van de Walle

CH2-1 （Oral）

14:20 - 14:35

Structural Analysis and Crystallographic Orientation of High-Quality, Metal-Rich,
Low Temperature-Grown ScAlN on GaN
Keisuke Motoki1, Amanda L. Tang1, Zachary Engel1, Timothy M. McCrone1, Christopher M. Matthews1,
Sangho Lee1, Emily N. Marshall1, Aheli Ghosh1, W. Alan Doolittle1
1
Georgia Institute of Technology, United States of America

CH2-2 （Oral）

14:35 - 14:50

Optical properties of rocksalt ScN
Martin Feneberg1, Jona Grümbel1, Christopher Lüttich1, Armin Dadgar1, Yuichi Oshima2, Adam Dubroka3,
Manfred Ramsteiner4, Rüdiger Goldhahn1
1
Otto von Guericke University Magdeburg, Germany, 2 Research Center for Electronic and Optical
Materials, National Institute for Materials Science, Japan, 3 Department of Condensed Matter Physics,
Masaryk University,Czech Republic, 4 Paul-Drude-Institut für Festkörperelektronik (PDI), Germany

CH2-3 （Oral）

14:50 - 15:05

Characterization of Optical Properties and Bandgaps of Sc xAl1-xN Epitaxially
Grown on GaN Bulk Substrate by Sputtering Method
Takuya Maeda1, Yusuke Wakamoto1, Shota Kaneki2, Hajime Fujikura2, Atsushi Kobayashi3
1
The University of Tokyo, Japan, 2 Sumitomo Chemical Co., Japan, 3 Tokyo University of Science, Japan

CH2-4 （Oral）

15:05 - 15:20

In-plane ferroelectric polarization reversal in non-polar wurtzite AlScN
Mohamed Yassine1, Niclas M. Feil1, Akash Nair2, Andreas Graff3, Rachid Driad2, Fouad Benkhelifa2, Elisa
K. Wade1, Oliver Ambacher1
1
University of Freiburg, Institute for Sustainable Systems Engineering INATECH, Germany, 2 Fraunhofer
Institute for Applied Solid State Physics IAF, Germany, 3 Fraunhofer Institute for Microstructure ofMaterials andSystems IMWS, Germany

CH2-5 （Oral）

15:20 - 15:35

STEM Investigation of AlScN ferroHEMT
Naomi Ayaka Pieczulewski1, Thai-son Nguyen1, Kazuki Nomoto1, Jimy Encomendero1, Huili Xing1,
Debdeep Jena1, David A Muller1
1Cornell University, United States of America

JT1: Visible Optical Devices
Navis C

November 13 (Mon) 14:20 -15:35

Chair : Akihiko Kikuchi, Lars Samuelson

JT1-1 （Oral）

14:20 - 14:35

Blue-Green Semipolar (10-11) InGaN-based µLED on SOI
Beatrice Wannous1, Fabian Rol1, Pierre-Marie Coulon2, Ludovic Dupré1, Patrick Le Maitre1, Jesus ZunigaPerez2, Anthony Cibié1, David Cooper1, Sultan El Badaoui1, Philippe Vennéguès2, François Templier1
1
CEA-LETI, France, 2 CRHEA, France

The 14th International Conference on Nitride Semiconductors (ICNS-14)

JT1-2 （Oral）

14:35 - 14:50

Fabrication and Characterization of 5 μm-diameter Micro-LED array under
injections ranged from 0.1 to 2kA/cm2
Chuhan Deng1, Zhizhong Chen1,2,3, Boyan Dong1, Zuojian Pan1, Haodong Zhang1, Jingxin Nie1, Weihua
Chen1, Jiao Fei1,4, Xiangning Kang1, Qi Wang2, Guoyi Zhang1,2, Bo Shen1,3, Lin Yuan5, Jianfeng Zhu5,
Chenhui Xia5
1
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking
University, Beijing, China, 2 Dongguan Institute of Optoelectronics, Peking University, Dongguan,
Guangdong, China, 3 Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, Jiangsu,
China, 4 State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University,
Beijing, China, 5 NANTONG TONGFANG SEMICONDUCTOR CO.,LTD., China

JT1-3 （Oral）

14:50 - 15:05

Effect of underlying layer on red GaInN-based multi-quantum shells on hexagonal
nanopyramid structures
Ayaka Shima1, Weifang Lu2, Mizuki Takahashi1, Yuki Yamanaka1, Soma Inaba1, Shiori Ii1, Yuta Hattori1,
Kosei Kubota1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1
1
Meijo Univ., Japan, 2 Xiamen Univ., China

JT1-4 （Oral）

15:05 - 15:20

Performance of oxide-based versus to metal-based contacts for InGaN laser diodes
Szymon Grzanka1,2, Eliana Kamińska1, Aleksandra Wójcicka3, Michał Borysiewicz3, Piotr Perlin1
1
Institute of High Pressure Physics PAS, Poland, 2 Top-GaN sp. z o.o., Poland, 3 Lukasiewicz Research
Network - Institute of Microelectronics and Photonics, Poland

JT1-5 （Oral）

15:20 - 15:35

Multi-wavelength single chip integrated GaN microcavity lasers on Si(100)
Lilong Ma1, Xin Hou1, Peng Gu1, Leiying Ying1, Yang Mei1, Baoping Zhang1
1
Xiamen University, China

Poster Session I
Argos A-C

November 13 (Mon) 15:45 -17:35

Argos D

November 13 (Mon) 17:35 -19:00

ED2: Vertical Power I
Chair : Frank Brunner, Jun Suda

ED2-1 （Invited）

17:35 - 18:00

Vertical GaN Power Devices Using Selective Area Doping with Ion Implantation
Tetsu Kachi1, Maciej Matys1, Kazuki Kitagawa1, Tsutomu Uesugi1, Tetsuo Narita2, Jun Suda1
1
Nagoya Univ., Japan, 2 Toyota Central R&D Labs., Japan

ED2-2 （Oral）

18:00 - 18:15

kV-class Vertical GaN Junction Barrier Diodes using Mg Implantation
Dolar Khachariya1, Will Mecouch1, Seiji Mita1, Shashwat Rathknathiwar2, Pramod Reddy1, Ronny Kirste1,
Kacper Sierakowski3, Grzegorz Kamler3, Michal Bockowski3, Erhard Kohn2, Spyridon Pavlidis2, Ramon
Collazo2, Zlatko Sitar1,2
1
Adroit Materials, United States of America, 2 North Carolina State University, United States of America,
3
Institute of High Pressure Physics, Poland

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED2-3 （Oral）

18:15 - 18:30

P-InGaN for high breakdown voltage GaN vertical Schottky diodes
Alessandro Floriduz1, Zheng Hao1, Elison Matioli1
1École Polytechnique Fédérale de Lausanne, Switzerland

ED2-4 （Oral）

18:30 - 18:45

High-power Vertical GaN Diodes using Ammonia Molecular Beam Epitaxy
Esmat Farzana1, Kai Shek Qwah1, Zachary J. Biegler1, Ashley Wissel-Garcia1, Iris Celupica-Liu1, Takeki
Itoh1, James S. Speck1
1
University of California, Santa Barbara, United States of America

ED2-5 （Oral）

18:45 - 19:00

First Demonstration of Optically-Controlled Vertical GaN Power FinFETs withHigh On-Current Density and Photo-Responsivity
Jung-Han Hsia1, Joshua Perozek1, Benjamin Briggs2, Tomás Palacios1
1
Massachusetts Institute of Technology, United States of America, 2 Applied Materials, Inc., United Statesof America

GR2: GaN II
Argos E

November 13 (Mon) 17:35 -19:00

Chair : Hisashi Murakami, Xinqiang Wang

GR2-1 （Invited）

17:35 - 18:00

Quasi-van der Waals epitaxy of III-nitride semiconductors on graphene
Xinqiang Wang1, F. Liu1, T. Wang1, X. Gao1, H. Y. Yang1, Z. Y. Chen1, K. H. Liu1, X. Z. Li1, H. L. Peng1,
B. Shen1
1
Peking Univ., China

GR2-2 （Oral）

18:00 - 18:15

Suppression of Polycrystal Formation on for Long-term growth with Halogen-Free
Vapor Phase Epitaxy
Hiroki Shimazu1, Shin-ichi Nishizawa2, Shugo Nitta3, Hiroshi Amano3, Daisuke Nakamura1
1
Toyota Central R&D Labs., Inc., Japan, 2 Kyushu University, Research Institute for Applied Mechanics,
Japan, 3 Nagoya University, CIRFE, IMaSS, Japan

GR2-3 （Oral）

18:15 - 18:30

Effect of hydrogen partial pressure on GaN high-speed growth by OVPE
Shigeyoshi Usami1, Masayuki Imanishi1, Junichi Takino2, Tomoaki Sumi2, Yoshio Okayama2, Masashi
Yoshimura3, Masahiko Hata4, Masashi Isemura5, Yusuke Mori1
1
Graduate school of Engineering, Osaka University, Japan, 2 Panasonic Holdings Corporation, Japan, 3Institute of Laser Engineering, Osaka Univeristy, Japan, 4 Itochu Plastics Inc., Japan, 5 Sosho-ohshin Inc.,
Japan

GR2-4 （Oral）

18:30 - 18:45

High temperature and high speed growth of GaN using HVPE-THVPE hybrid
methodHisashi Murakami1, Kota Nemoto1, Xingxing Pan1, Eiji Hase2, Kentaro Nagamatsu2
1
Tokyo University of Agriculture and Technology, Japan, 2 Tokushima University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR2-5 （Oral）

18:45 - 19:00

Precise determination of critical layer properties during MOVPE of blue GaN-basedlaser structures by in-situ metrology
Kolja Haberland1, Johannes Enslin2, Frank Brunner2, Markus Weyers2
1
LayTec AG, Germany, 2 Ferdinand-Braun-Institut (FBH), Germany

OD2: Micro LEDs: Full-Color
Arogs F

November 13 (Mon) 17:35 -19:00

Chair : Yasufumi Fujiwara, Baoping Zhang

OD2-1 （Invited）

17:35 - 18:00

High-Efficiency InGaN Red Mini/Micro-LEDs on Sapphire Toward Full-Color
Nitride Displays
Zhaoying Chen1,2, Zexing Yuan1, Bowen Sheng1, Fang Liu1, Tao Wang1, Xin Rong1, Jingsheng Huang3,
Jiangying Qiu3, Wenji Liang3, Chunlei Zhao3, Long Yan4, Jason Hu4, Shiping Guo4, Weikun Ge1, Bo Shen1,
Xinqiang Wang1
1
Peking University, China, 2 GuSu Laboratory of Materials, China, 3 AET Displays Limited, China, 4Advanced Micro-Fabrication Equipment Inc, China

OD2-2 （Oral）

18:00 - 18:15

Monolithic Full-color InGaN-based LED with Si-doped Interlayers
Koji Okuno1, Koichi Goshonoo1, Masaki Ohya1
1
Toyota Gosei Co., Ltd., Japan

OD2-3 （Oral）

18:15 - 18:30

Fabrication of stacked RGB monolithic GaInN-based μLED arrays
Tatsunari Saito1, Naoki hasegawa1, Keigo Imura1, Yoshinobu Suehiro1, Tetsuya Takeuchi1, Satoshi
Kamiyama1, Daisuke Iida2, Kazuhiro Ohkawa2, Motoaki Iwaya1
1
Meijo university, Japan, 2 King Abdullah University of Science and Technology (KAUST), Saudi Arabia

OD2-4 （Oral）

18:30 - 18:45

Monolithic integration of small blue and red LEDs for next-generation micro-LED
displays with ultrahigh definition
Toshihiro Ishihara1, Shuhei Ichikawa1, Genki Tanaka1, Kazutsune Miyanaga1, Tsuyoshi Uemura1, Norio
Kanzaki1, Jun Tatebayashi1, Yasufumi Fujiwara1
1
Osaka University, Japan

OD2-5 （Oral）

18:45 - 19:00

Influence of stray light in monolithic μLED arrays and its reduction
Naoki Hasegawa1, Tatsunari Saito1, Keigo Imura1, Yoshinobu Suehiro1, Tetsuya Takeuti1, Satoshi
Kamiyama1, Motoaki Iwaya1
1
Meijo Univ., Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH3: InGaN Optical II
Navis A

November 13 (Mon) 17:35 -19:00

Chair : Aurelien David, Yoichi Kawakami

CH3-1 （Invited）

17:35 - 18:00

Nanoscale investigation of point defects and carrier dynamics in InGaN/GaN
quantum wells
Nicolas Grandjean11Institute of Physics, EPFL, Switzerland

CH3-2 （Oral）

18:00 - 18:15

Optical Nano-Characterization of a Cascaded InGaN/GaN LED
Frank Bertram1, Gordon Schmidt1, Peter Veit1, Christoph Berger1, Armin Dadgar1, Andre Strittmatter1,
Juergen Christen1
1
University of Magdeburg, Germany

CH3-3 （Oral）

18:15 - 18:30

Evolution of the Quantum Confined Stark Effect with external electrical or opticalexcitation in InGaN/GaN structures with single Quantum Well of different width
Tadek Suski1, Grzegorz Staszczak1, Katarzyna Pieniak1, Anna Kafar1, Witold Trzeciakowski1, Grzegorz
Muzioł1, Marcin Siekacz1, Czesław Skierbiszewski1
1
Institute of High Pressure Physics Polish Academy of Sciences ul. Sokolowska 29/37 01-142 Warsaw
POLAND, Poland

CH3-4 （Oral）

18:30 - 18:45

Evaluation of radiative and non-radiative recombination lifetimes in c-plane InGaN
quantum wells with different In composition
Keito Mori-Tamamura1, Yuya Morimoto1, Atsushi A. Yamaguchi1, Susumu Kusanagi2, Yuya Kanitani2,
Yoshihiro Kudo2, Shigetaka Tomiya2
1
Kanazawa Institute of Technology, Japan, 2 Sony Semiconductor Solutions Corporation, Japan

CH3-5 （Oral）

18:45 - 19:00

Significant improvement of light emission of InGaN/GaN quantum wells bydepositing oxide thin films and ultraviolet light irradiations
Koichi Okamoto1, Seiya Kaito1, Yuki Kamei1, Kenta Mitoda1, Kosuke Fujioka1, Tomohiko Niwa1, Kenji
Wada1, Mitsuru Funato2, Yoichi Kawakami2
1
Osaka Metropolitan University, Japan, 2 Kyoto University, Japan

JT2: UV Optical Devices
Navis B

November 13 (Mon) 17:35 -18:50

Chair : Masataka Imura, TBA

JT2-1 （Oral）

17:35 - 17:50

Flexible GaN UV microdisk laser on PET substrate
Peng Gu1, Shuai Yang1, Lilong Ma1, Tao Yang1, Xin Hou1, Yang Mei1, Leiying Ying1, Hao Long1, Baoping
Zhang1
1
Xiamen University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

JT2-2 （Oral）

17:50 - 18:05

Increase the Efficiency of 228-237 nm AlGaN Far-UVC LEDs with p-Side Graded
Layer
Noritoshi Maeda1, Yasushi Iwaisako2, Hideki Hirayama1
1
RIKEN, Japan, 2 Nippon Tungsten, Japan

JT2-3 （Oral）

18:05 - 18:20

Flexible nanowire UV-LEDs
Nuno Amador-Medez1, Roberto Hernandez1, Jules Duraz1, Etienne Hertz1, Sophie Bouchoule1, François
Julien1, Vincent Grenier2, Lucie Valéra2, Sylvain Finot3, Gwénolé Jacopin3, Fedor Kochetkov4, Vladimir
Neplokh 4, Ivan Mukhin 4, Maria Tchernycheva1, Christophe DURAND2
1
C2N-CNRS, Université Paris Saclay, France, 2 Univ. Grenoble Alpes, CEA, PHELIQS, France, 3 Univ.
Grenoble Alpes, CNRS, Institut Neel, France, 4 Department of Physics, Alferov University, Russia

JT2-4 （Oral）

18:20 - 18:35

Heteroepitaxy of High Al-content AlGaN on Si Towards Thin-Film Flip-Chip Deep
Ultraviolet Light Sources
Qian Sun1
1
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China

JT2-5 （Oral）

18:35 - 18:50

Generation of multiple ultraviolet optical tweezers with monolithic AlN
metasurfaces
Xiaobin Yu1,2, Yanan Guo1,2, Zhibin Liu1,2, Junxi Wang1,2, Jinmin Li1,2, Jianchang Yan1,2
1
Institute of Semiconductors, CAS, China, 2 University of Chinese Academy of Sciences, China

GR3: Doping and Defects
Navis C

November 13 (Mon) 17:35 -18:50

Chair : Jaime Freitas, Jr., Shugo Nitta

GR3-1 （Oral）

17:35 - 17:50

Pushing the Mg doping limit in N-polar GaN by controlling self-compensation
Masahiro Kamiyama1, Shashwat Rathkanthiwar1, Cristyan Quiñones García1, James Loveless1, Seiji Mita2,
Pramod Reddy2, Ronny Kirste2, Ramón Collazo1, ZlatkoSitar1,2
1
North Carolina State University, United States of America, 2 Adroit Materials, United States of America

GR3-2 （Oral）

17:50 - 18:05

Optical and Structural Properties of Praseodymium-Implanted AlN Films
Kanako Shojiki1, Shin-ichiro Sato2, Ken-ichi Yoshida3, Hideaki Minagawa3, Hideto Miyake1
1
Mie University, Grad. Sch. of Eng., Japan, 2 National Institutes for Quantum Science and Technology,
Japan, 3 Ion Technology Center Co., Ltd, Japan

GR3-3 （Oral）

18:05 - 18:20

Ultra-high pressure annealing of Mn-implanted HVPE-GaN
Piotr Jaroszynski1, Kacper Sierakowski1, Rafal Jakiela2, Marcin Turek3, Michal Fijalkowski1, Tomasz
Sochacki1, Michal Bockowski1,41
Institute of High Pressure Physics of the Polish Academy of Sciences, Poland, 2 Institute of Physics Polish
Academy of Sciences, Poland, 3 Institute of Physics Maria Curie-Sklodowska University, Poland, 4CIRFE,
IMaSS, Nagoya University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR3-4 （Oral）

18:20 - 18:35

Control of point defect density in GaInN/GaN quantum wells: The underlayer as adiffusion barrier, regardless of its composition
Rodrigo De Vasconcellos Lourenco1,2, Heiko Bremers1,2, Uwe Rossow1, Andreas Hangleiter1,2
1Technische Universität Braunschweig, Germany, 2 Laboratory for Emerging Nanometrology, Germany

GR3-5 （Oral）

18:35 - 18:50

Half-loop Formation in Low Temperature GaN to Form Large V-defects for Lateral
Injection
Jacob Ewing1, Feng Wu1, Alejandro Quevedo1, Tanay Tak1, Shuji Nakamura1, Steven P. DenBaars1, James
S. Speck1
1
Materials Department, UC Santa Barbara, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

November 14(Tue)

ED3: Lateral Power II / ICs
Argos D

November 14 (Tue) 8:30 -10:15

Chair : Elison Matioli, Takuma Nanjo

ED3-1 （Oral）

8:30 - 8:45

GaN Lateral Schottky Superjunction Diodes
Zachary Biegler1, Esmat Farzana1, Wan Ying Ho1, Sriram Krishnamoorthy1, James S Speck1
1
University of California - Santa Barbara, United States of America

ED3-2 （Oral）

8:45 - 9:00

First Observation of Dynamic Switching-Induced Negative Resistance
Characteristics in Spaced Hybrid Drain-Embedded p-GaN HEMTs Using
Nanosecond-Scale Transient Characterization Techniques
Wen Feng Wang1, Feng Zhou1, Zong Wei Xu1, Fang fang Ren1, Dong Zhou1,Jun Dun Chen1, Rong Zhang1,
Dou You Zheng1, Hai Hai1
1
Nanjing University, China

ED3-3 （Oral）

9:00 - 9:15

Physics-based trap analysis and compact modeling performance evaluation of
AlGaN/GaN HEMTs
Carlo De Santi1, Nicola Modolo1, Giulio Baratella2,3, Matteo Borga3, Niels Posthuma3, Benoit Bakeroot2,3,
Stefaan Decoutere3, Gaudenzio Meneghesso1, Enrico Zanoni1, Matteo Meneghini1
1
Department of Information Engineering, University of Padova, Padova, 35131, Italy, 2 CMST, IMEC,
Ghent University, B9052 Ghent, Belgium, 3 IMEC VZW, B3001 Leuven, Belgium

ED3-4 （Oral）

9:15 - 9:30

Normally-off Operation of High-Al-Composition AlGaN Channel HEMTs with Gate
Recess Structures
Itsuki Nakaoka1, Makoto Urushiyama1, Etsushi Kubota2, Kenjiro Uesugi2,3, Takao Nakamura1, Hideto
Miyake1
1
Mie University Graduate School of Engineering, Japan, 2 Mie University Graduate School of RIS, Japan,
3
Mie University ORIP, Japan

ED3-5 （Oral）

9:30 - 9:45

Analytical Study of Vertical Leakage Current in AlGaN-based Buffer Layer Grown
on Si Substrate
Ryoma Kaneko1, Hisashi Yoshida1, Akira Yoshioka2, Toshiki Hikosaka1, Shinya Nunoue1
1
Toshiba Corporation, Japan, 2 Toshiba Electronic Devices & Storage Corporation, Japan

ED3-6 （Oral）

GaN-based complementary logic integrated circuits with VDD of 0.5V
Xuerui Niu1, Bolin Wang1, Bin Hou1, Ling Yang1, Xiaohua Ma
1
Xidian University, China

9:45 - 10:00

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED3-7 （Oral）

10:00 - 10:15

Band engineering of polarization induced 2D hole gases in GaN/AlGaN
heterostructures
Pengfei Shao1, Songlin Chen1, Siqi Li1, Hui Zhou1, Tao Tao1, Zili Xie1, Dunjun Chen1, Youdou Zheng1,
Rong Zheng1,2, Ke Wang1,3
1
Nanjing University, China, 2 Xiamen University, China, 3 RIKEN, Japan

CH4: Characterization for Electron Devices I
Argos E

November 14 (Tue) 8:30 -10:25

Chair : Filip Tumisto, Masahiro Horita

CH4-1 （Invited）

8:30 - 8:55

GaN Vertical Devices: challenges for high performance and stability
Matteo Meneghini1,2,6, Manuel Fregolent1,6, Nicolò Zagni3,6, Carlo De Santi1,6, Eldad Bahat Treidel4, Enrico
Brusaterra4, Frank Brunner4, Oliver Hilt4, ChristianHuber5, Matteo Buffolo1,6, Alberto Marcuzzi1,6, Davide
Favero1,6, Andrea Del Fiol1, Giovanni Verzellesi3,6, Paolo Pavan3,6, Gaudenzio Meneghesso1,6, Enrico
Zanoni1,6
1
University of Padova - Department of Information Engineering, Italy, 2 University of Padova - Departmentof Physics and Astronomy, Italy, 3 University of Modena and Reggio Emilia, Italy, Italy, 4 Ferdinand Braun
Institute, Berlin, Germany, Germany, 5 Department for Advanced Technologies and Microsystems, Robert
Bosch GmbH, Germany, Germany, 6 Consorzio Nazionale Interuniversitario per la Nanoelettronica(IU.NET), Italy

CH4-2 （Oral）

8:55 - 9:10

Emission and Capture Kinetics of Minority Carrier Trap in GaN Devices by Optical
DLTS
Jiaxiang Chen1, Jin Sui1, Haolan Qu1, Xinbo Zou1
1
School of Information Science and Technology of ShanghaiTech University , China

CH4-3 （Oral）

9:10 - 9:25

Leakage Mechanisms in 1.2kV Vertical p-i-n GaN Rectifiers with NitrogenImplanted Floating Guard Rings and Premature Breakdown Study by Sub-bandgap
Photoluminescence
Zhiyu Xu1, Matthias A. Daeumer2, Minkyu Cho1, Marzieh Bakhtiary-Noodeh3, Jae-Hyuck Yoo2, Qinghui
Shao2, Ted A. Laurence2, Daryl Key4, Edward Letts4, Tadao Hashimoto4, Theeradetch Detchprohm1,
Russell D. Dupuis1,3, Shyh-Chiang Shen1
1
School of Electrical and Computer Engineering, Georgia Institute of Technology, United States of America,2
Lawrence Livermore National Laboratory, United States of America, 3 School of Materials Science andEngineering, Georgia Institute of Technology, United States of America, 4 SixPoint Materials, United Statesof America

CH4-4 （Oral）

9:25 - 9:40

p-GaN/AlGaN/GaN Heterostructure as a Versatile Platform for Extremely-WideTemperature-Range (X-WTR) Electronics
Yat Hon Ng1, Zheyang Zheng1, Li Zhang1, Ruizi Liu1, Tao Chen1, Sirui Feng1, Qiming Shao1, Kevin J.
Chen1
1
The Hong Kong University of Science and Technology, Hong Kong, China, Hong Kong

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH4-5 （Oral）

9:40 - 9:55

Remarkably Low Thermal Boundary Resistance between Diamond and GaN for
GaN-based Devices Cooling
Haolun Sun1, Mei Wu1, Ping Wang1, Ling Yang1, Xiaohua Ma1, Yue Hao1
1
Xidian University, China

CH4-6 （Oral）

9:55 - 10:10

Nanoscale mapping of threshold voltage distribution in GaN-based high electron
mobility transistor structures
Chen Chen1, Saptarsi Ghosh1, Gunnar Kusch1, Francesca Adams1, Menno J. Kappers1, David J. Wallis1,2,Rachel A. Oliver1
1
University of Cambridge, UK, 2 University of Cardiff, UK

CH4-7 （Oral）

10:10 - 10:25

Electroluminescence and Gate Carrier Dynamics in a Schottky type p-GaN Gate
Double-Channel GaN HEMT
Sirui Feng1, Hang Liao1, Tao Chen1, Junting Chen2, Yan Cheng1, Mengyuan Hua2, Zheyang Zheng1, Kevin
J. Chen1
1
Hong Kong University of Science and Technology, Hong Kong, 2 Southern University of Science andTechnology, China

OD3: VCSELs
Argos F

November 14 (Tue) 8:30 -10:10

Chair : Åsa Haglund, Masaru Kuramoto

OD3-1 （Invited）

8:30 - 8:55

Polarization and Modes control of GaN-based VCSELs with curved mirror
Tatsushi Hamaguchi1, Tomohiro Makino1, Kentaro Hayashi1, Maiko Ito1, Maho Ohara1, Noriko Kobayashi1,
Hiroyuki Miyahara1, Koichi Sato1, Yuki Nakamura1,Takumi Watanabe1, Shouetsu Nagane1, Yuichiro
Kikuchi1, Tatsuro Jyokawa1, Yukio Hoshina1, Eiji Nakayama1, Rintaro Koda1, Noriyuki Futagawa1
1
Sony Semiconductor Solutions Corporation, Japan

OD3-2 （Oral）

8:55 - 9:10

Green VCSELs based on InGaN quantum dots and a submicron cavity
Tao Yang1, Yan-Hui Chen1, Ya-Chao Wang1, Wei Ou1, Lei-Ying Ying1, Yang Mei1, Ai-Qin Tian2, Jian-Ping
Liu2, Bao-Ping Zhang1
1
Xiamen University, China, 2 Chinese Academy of Sciences, China

OD3-3 （Oral）

9:10 - 9:25

Long-cavity m-plane GaN-based vertical-cavity surface-emitting lasers with atopside curved dielectric mirror
Nathan C Palmquist1, Ryan Anderson1, Jared A Kearns1, Emily Trageser1, Stephen Gee1, Arturo Juan1,
Steven P Denbaars1, Shuji Nakamura1
1
UC Santa Barbara, United States of America

OD3-4 （Oral）

9:25 - 9:40

In-situ layer thickness control of AlInN/GaN DBRs with in-situ reflectivity spectra
measurements
Kenta Kobayashi1, Tsuyoshi Nagasawa1, Kana Shibata1, Taichi Nishikawa1, Tetsuya Takeuchi1, Motoaki
Iwaya1, Satoshi Kamiyama1
1
Meijo University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD3-5 （Oral）

9:40 - 9:55

Three-Dimensional Mode Confinement by Burying SiO2 Nanospheres in the DBRsof GaN-based VCSELs
Huanqing Chen1, Shukun Li1, Menglai Lei1, Guo Yu1, Xiaodong Hu1
1
Peking University, China

OD3-6 （Oral）

9:55 - 10:10

Flexible GaN based VCSELs and microdisk lasers
Yang Mei1, Peng Gu1, Lilong Ma1, Leiying Ying1, Baoping Zhang1
1
Xiamen University, China

CH5: GaN
Navis A

November 14 (Tue) 8:30 -10:25

Chair : Andreas Hangleiter, Takao Oto

CH5-1 （Invited）

8:30 - 8:55

Revisiting the determination of the carrier diffusion length in GaN from
cathodoluminescence spectroscopy
Jonas Lähnemann1, Vladimir M. Kaganer1, Uwe Jahn1, Karl K. Sabelfeld2, Anastasia E. Kireeva2, Timur
Flissikowski1, Carsten Pfüller1, Caroline Chèze1, Raffaela Calarco1, Oliver Brandt1
1Paul Drude Institute, Germany, 2 Institute of Computational Mathematics and Mathematical Geophysics,
Russian Academy of Sciences, Russia

CH5-2 （Oral）

8:55 - 9:10

Hall Mobilities of High-purity GaN crystals-Record high mobilities and anomalous
C-concentration dependenceShota Kaneki1, Taichiro Konno1, Takeshi Kimura1, Kazutaka Kanegae2,3, Jun Suda3,4, Hajime Fujikura1
1
Sumitomo Chemical Co. Ltd., Japan, 2 Kyoto University, Japan, 3 Nayoga University, Japan, 4 Nagoya
University, IMaSS, Japan

CH5-3 （Oral）

Characterization of Micro-Crack Formation
Ammonothermally grown GaN substrates

9:10 - 9:25

andLatticeDistortionsin

Nadeemullah A Mahadik1, Michael E Liao1, Jennifer K Hite1, Jaime A Freitas Jr. 1, James C Culbertson1,
Travis J Anderson1, Edward Letts2, David Key2, Tadao Hashimoto2
1
US Naval Research Laboratory, United States of America, 2 SixPoint Materials Incorporated, UnitedStates of America

CH5-4 （Oral）

9:25 - 9:40

Wafer-scale characterization of mosaics and the impact on point defects in GaN
studied using 2D birefringence and photoluminescence measurements
Kohei Shima1, Shigefusa F Chichibu1
1Inst. Multidisciplinary Research for Advanced Materials, Tohoku University, Japan

CH5-5 （Oral）

9:40 - 9:55

Investigation of Sub-Surface Crystal Properties from GaN wafer processing
Nadeemullah A Mahadik1, Michael E Liao1, Jaime A Freitas Jr. 1, James C Culbertson1, Tomasz Sochacki2,
Robert Kucharski2, Michal Bockowski2, Travis J Anderson1
1
US Naval Research Laboratory, United States of America, 2 Institute of High Pressure Physics Polish
Academy of Sciences, Poland

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH5-6 （Oral）

9:55 - 10:10

Machine Learning Assisting NanoXRD Based Analysis on HVPE GaN Structure
ZHENDONG WU1, Yusuke Hayashi1, Tetsuya Tohei1, Kazushi Sumitani2, Yasuhiko Imai2, Shigeru
Kimura2, Akira Sakai1
1Grad. Sch. Eng. Sci., Osaka Univ., Japan, 2 JASRI, Japan

CH5-7 （Oral）

10:10 - 10:25

Thermal oxidation of [0001] GaN in water vapor compared with dry and wet
oxidation: oxide properties and impact on GaŁukasz Janicki1,2, Ryszard Korbutowicz3, Mariusz Rudziński4, Paweł Piotr Michałowski4, SebastianZłotnik5, Miłosz Grodzicki1,2, Sandeep Gorantla1, Jarosław Serafińczuk1,6, Detlef Hommel1,7, Robert
Kudrawiec1,21Łukasiewicz Research Network - PORT Polish Center for Technology Development, Poland, 2 Department
of Semiconductor Materials Engineering, Wrocław University of Science and Taechnology, Poland, 3
Department of Microelectronics and Nanotechnology, Wroclaw University of Science and Technology,
Poland, 4 Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Poland, 5 Instituteof Applied Physics, Military University of Technology, Poland, 6 Department of Nanometrology, Wroclaw
University of Science and Technology, Poland, 7 Institute of Low Temperature and Structure Research,
Polish Academy of Sciences, Poland

GR4: AlN I
Navis B

November 14 (Tue) 8:30 -10:25

Chair : Satoshi Kamiyama, Zlatko Sitar

GR4-1 （Invited）

8:30 - 8:55

Progress in UV-C LEDs on Face-to-Face Annealed Sputter-Deposited AlN Templates
Kenjiro Uesugi1,2, Kanako Shojiki3, Shiyu Xiao3, Shuhei Ichikawa4,5, Takao Nakamura3, Masahiko
Tsuchiya6, Kazunobu Kojima4, Hideto Miyake3
1
Mie University, ORIP, Japan, 2 Mie University, Grad. Sch. of RIS, Japan, 3 Mie University, Grad. Sch. ofEng., Japan, 4 Osaka University, Grad. Sch. of Eng., Japan, 5 Osaka University, Center for UHVEM, Japan,
6
Stanley Electric Co., Japan

GR4-2 （Oral）

8:55 - 9:10

Fabrication of Multiple Polarity Inverted AlN Structures by Multiple Sputteringand High-Temperature Annealing
Tomohiro Tamano1, Kanako Shojiki1, Hiroto Honda2, Eiki Sato2, Kenjiro Uesugi3,4, Shiyu Xiao1, Masahiro
Uemukai2, Tomoyuki Tanikawa2, Ryuji Katayama2, Hideto Miyake1
1
Mie University, Grad. Sch. of Eng., Japan, 2 Osaka University, Grad. Sch. of Eng., Japan, 3 Mie University,
ORIP, Japan, 4 Mie University, Grad. Sch. of RIS, Japan

GR4-3 （Oral）

9:10 - 9:25

Demonstration of Controllable Si Doping in N-polar AlN by Plasma Assisted
Molecular Beam Epitaxy
Md Irfan Khan1, Cindy Lee1, Elaheh Ahmadi1
1
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, UnitedStates of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR4-4 （Oral）

9:25 - 9:40

Substrate Off-cut Angle Dependence of Crystallinity and Crystal Orientation of aplane AlN Fabricated by Sputtering and High-Temperature Annealing
Yuki Ogawa1, Jiei Hayama1, Kenjiro Uesugi2,3, Toru Akiyama1, Hideto Miyake1
1
Graduate School of Engineering, Mie University, Japan, 2 ORIP, Mie University, Japan, 3 Graduate Schoolof RIS, Mie University, Japan

GR4-5 （Oral）

9:40 - 9:55

High conductivity in Ge-doped AlN via implantation
Seiji Mita1,2, Pegah Bagheri2, Cristyan Quinones-Garcia2, Dolar Khachariya1,2, James Loveless2, Shashwat
Rathkanthiwar2, Pramod Reddy1,2, Ronny Kirste1,2, James Tweedie1,2, Ramon Collazo2, Zlatko Sitar2
1
Adroit Materials, United States of America, 2 North Carolina State University, United States of America

GR4-6 （Oral）

9:55 - 10:10

Engineering the High-Temperature Annealing Process of Aluminium Nitride by Ion
Implantation
Christoph Margenfeld1, Lukas Peters1, Carsten Ronning2, Jan Krügener3, Jana Hartmann1, Andreas Waag1
1
Institute of Semiconductor Technology, Technische Universität Braunschweig, Germany, 2 Institute ofSolid State Physics, Friedrich Schiller University Jena, Germany, 3 Institute of Electronic Materials andDevices,Leibniz Universität Hannover, Germany

GR4-7 （Oral）

10:10 - 10:25

Hexagonal BN-Assisted Interfacial Lattice-Polarity-Controlled van der Waals
Epitaxy of AlN and Wafer-scale Exfoliation
Lulu Wang1, Junxi Wang1, Jinmin Li1, Tongbo Wei1
1
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences,
China

GR5: MOCVD
Navis C

November 14 (Tue) 8:30 -10:25

Chair : Ramon Collazo, Yoshio Honda

GR5-1 （Invited）

8:30 - 8:55

Catalytic enhancement of ammonia reaction by trimethylgallium and its reactantsin MOVPE analyzed by TOF-MS isotope tracking
Shugo Nitta1, Daisuke Yahara2, Yoshio Honda1,3,4, Hiroshi Amano1,3,4
1
Institute of Materials and Systems for Sustainability, Nagoya University, Japan, 2 Department ofElectronics, Nagoya University, Japan, 3 Deep Tech Serial Innovation Center, Nagoya University, Japan, 4Institute for Advanced Research, Nagoya University, Japan

GR5-2 （Oral）

8:55 - 9:10

Relation between metal vacancy concentration and diffusion of silicon, magnesium
and hydrogen in AlGaInN epi structures
Mike Leszczynski1, Ewa Grzanka1, Mikolaj Grabowski1, Pawel Michalowski2, Roman Hrytsak1, Grzegorz
Muziol1, Czeslaw Skierbiszewski1, Jakub Cizek4, Alice Hospodkova4, Rafal Jakiela3, Robert Czernecki1,
Andrzej Turos2
1
Institute of High Pressure Physics, Poland, 2 Lukasiewicz Network Institute of Micromechanics andPhotonics, Poland, 3 Institute of Physics, Poland, 4 Institute of Physics, Czech Republic

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR5-3 （Oral）

9:10 - 9:25

Pressurized MOVPE growth of InN
Yudai Yamashita1, Kazuhide Kumakura1, Yoshitaka Taniyasu1
1
NTT Basic Research Laboratories, NTT Corporation, Japan

GR5-4 （Oral）

9:25 - 9:40

GaN Homoepitaxial Growth and Substrate-Dependent Effects for Vertical Power
DevicesJennifer Hite1, Michael Mastro1, James Gallagher1, Jaime Freitas1, Travis Anderson1
1
US Naval Research Laboratory, United States of America

GR5-5 （Oral）

9:40 - 9:55

Metalorganic Vapor Phase Epitaxy of +c/–c GaN Polarity Inverted Bilayer forTransverse Quasi Phase Matched Photon Pair Generation Device Application
Kazuhisa Ikeda1,2, Yuya Furukawa1,2, Tomotaka Murata1, Shuhei Ichikawa1, Yasufumi Fujiwara1, Tomoyuki
Tanikawa1,2, Masahiro Uemukai1,2, Ryuji Katayama1,2
1
Graduate School of Engineering Osaka University, Japan, 2 OTRI-Spin Osaka University, Japan

GR5-6 （Oral）

9:55 - 10:10

Influence of carrier gas (Nitrogen or Hydrogen) on the properties of Mg-doped
GaN/AlGaN layers grown by MOVPE technique.
Robert Czernecki1,2, Ewa Grzanka1,2, Rafal Jakiela3, Elzbieta Litwin-Staszewska1, Szymon Grzanka1,2,
Mike Leszczynski1,2
1Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland, Poland, 2 TopGaN
Ltd., Solec 24/90, 00-403 Warsaw, Poland, Poland, 3 Institute of Physics, PAS, Al. Lotnikow 32/46, 02-668
Warsaw, Poland, Poland

GR5-7 （Oral）

10:10 - 10:25

GaN/AlN Quantum Wells on Step-Edge Density-Controlled AlN Surface
Kanako Shojiki1, Yuto Yamanaka1, Ryota Ishii2, Kenjiro Uesugi3,4, Mitsuru Funato2, Yoichi Kawakami2,
Hideto Miyake1
1
Mie University, Grad. Sch. of Eng., Japan, 2 Kyoto University, Grad. Sch. of Eng., Japan, 3 Mie University,
ORIP, Japan, 4 Mie University, Grad. Sch. of RIS, JapanBreak

10:25 -10:55

ED4: Vertical Power II
Argos D

November 14 (Tue) 10:55 -12:35

Chair : Katsunori Ueno, Shigeyoshi Usami

ED4-1 （Invited）

10:55 - 11:20

A High Channel Mobility and a Normally-off Operation of m-plane GaN Trench
MOSFET Using an AlSiO/AlN Gate Stack Deposited by ALD
Masakazu Kanechika1, Kenji Ito2, Tetsuo Narita2, Kazuyoshi Tomita1, Shiro Iwasaki2, Daigo Kikuta2, Tetsu
Kachi1
1
Nagoya University, Japan, 2 Toyota Central R&D Labs., Inc., Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED4-2 （Oral）

11:20 - 11:35

Vertical GaN Trench-MOSFETs Fabricated on Ammonothermally Grown Bulk
GaN Substrates
Maciej Kaminski1,2, Jaroslaw Tarenko1,2, Oskar Sadowski1,2, Andrzej Taube1, Marek Ekielski1, Magdalena
Zadura1, Kamil Kosiel1, Iwona Jozwik1, Ernest Brzozowski1, Anna Szerling1, Pawel Prystawko3, Michal
Bockowski3, Izabella Grzegory3
1Łukasiewicz Research Network, Institute of Microelectronics and Photonics, Poland, 2 Warsaw Universityof Technology, Institute of Microelectronics and Optoelectronics, Poland, 3 Institute of High Pressure
Physics,Polish Academy of Sciences, Poland

ED4-3 （Oral）

11:35 - 11:50

High Current Density 1.2 kV-Class Vertical GaN Trench MOSFETs with HfO2 Gate
DielectricAndrew Binder1, Jeffrey Steinfeldt1, Andrew Allerman1, Kevin Reilly1, Richard Floyd1, Caleb Glaser1,
Michael Smith1, Luke Yates1, Brian Rummel1, Paul Sharps1, Robert Kaplar1
1
Sandia National Laboratories, United States of America

ED4-4 （Oral）

11:50 - 12:05

A Record Knee-voltage and Suppressed Leakage Current in N-polar GaN Unipolar
Diode
Biplab Sarkar1, Hirotaka Watanabe2, Jia Wang2, Hiroshi Amano2
1
Indian Institute of Technology Roorkee, India, 2 Nagoya University, Japan

ED4-5 （Oral）

12:05 - 12:20

High-Yield Manufacturing Demonstration of Planar 1.2kV and 3.3kV Vertical GaN
PiN Diodes
Travis Anderson1, Alan G Jacobs1, James C Gallagher1, James Spencer Lundh2, Jennifer K Hite1,
Nadeemullah A Mahadik1, Karl D Hobart1, Robert J Kaplar3
1
U.S. Naval Research Laboratory, United States of America, 2 National Research Council (residing at NRL),
United States of America, 3 Sandia National Labs, United States of America

ED4-6 （Oral）

12:20 - 12:35

Leakage Current Reduction in Vertical p-i-n GaN Diode by Edge Termination
Engineering with Shallow Bevel Mesas
Zhiyu Xu1, Theeradetch Detchprohm1, Shyh-Chiang Shen1, Russell D Dupuis1,2
1
School of Electrical and Computer Engineering, Georgia Institute of Technology, United States of America,2
School of Materials Science and Engineering, Georgia Institute of Technology, United States of America

CH6: GaN:Mg
Argos E

November 14 (Tue) 10:55 -12:50

Chair : Shuhei Ichikawa, Juergen Christen

CH6-1 （Invited）

10:55 - 11:20

Impacts of vacancy clusters on the luminescence dynamics in Mg-implanted GaN on
GaN structures
Shigefusa F Chichibu1, Akira Uedono2, Hiroko Iguchi3, Tetsuo Narita3, Keita Kataoka3, Michal
Bockowski4,5, Jun Suda5,6, Tetsu Kachi6, Shinya Takashima7, Ryo Tanaka7, Katsunori Ueno7, Masaharu
Edo7, Shoji Ishibashi8, Kohei Shima1
1
Tohoku University, Japan, 2 University of Tsukuba, Japan, 3 Toyota Central R&D Labs., Inc., Japan, 4 Inst.
High Pressure Physics, Polish Academy of Sciences, Poland, 5 Nagoya University, Japan, 6 Nagoya
University, Japan, 7 Fuji Electric Co., Ltd., Japan, 8 National Inst. Advanced Industrial Science andTechnology, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH6-2 （Oral）

11:20 - 11:35

TEM and SIMS analysis of pressure effect on diffusion of point defects in Mg-ionimplanted GaN
Emi Kano1, Koki Kobayashi1, Ritsuo Otsuki1, Keita Kataoka2, Kacper Sierakowski3, Michal Bockowski3,
Masahiro Nagao1, Tetsuo Narita2, Tetsu Kachi1, Nobuyuki Ikarashi1
1
Nagoya University, Japan, 2 Toyota Central R&D Labs., Inc., Japan, 3 Institute of High Pressure Physics
Polish Academy of Sciences, Poland

CH6-3 （Oral）

11:35 - 11:50

Luminescence studies of Mg-implanted and undoped GaN-on-GaN structures
processed by ultra-high-pressure annealing
Kohei Shima1, Tetsuo Narita2, Keita Kataoka2, Shoji Ishibashi3, Akira Uedono4, Michal Bockowski5,6, Jun
Suda6,7, Tetsu Kachi7, Shigefusa F Chichibu1
1Inst. Multidisciplinary Research for Advanced Materials, Tohoku University, Japan, 2 Toyota Central R&D
Labs., Japan, 3 CD-FMat, National Inst. Advanced Industrial Science and Technology, Japan, 4 Facult.Pure
and Applied Science, University of Tsukuba, Japan, 5 Inst. High Pressure Physics, Polish Academy of
Sciences, Poland, 6 Dept. Electronics, Graduate School of Engineering, Nagoya University, Japan, 7 Inst.
Materials and Systems for Sustainability, Nagoya University, Japan

CH6-4 （Oral）

11:50 - 12:05

Lateral and Vertical Diffusion of Magnesium in Ion-implanted HVPE-GaN
Kacper Pawel Sierakowski1, Piotr Jaroszynski1, Rafal Jakiela2, Michal Fijalkowski1, Tomasz Sochacki1,
Malgorzata Iwinska1, Marcin Turek3, Michal Bockowski1,41
Institute of High Pressure Physics PAS, Poland, 2 Institute of Physics PAS, Poland, 3 Institute of Physics
Maria Sklodowska Curie University Lublin, Poland, 4 CIRFE, IMaSS, Nagoya University, Japan

CH6-5 （Oral）

12:05 - 12:20

Detection of Gap States Originated from Ga-Interstitial and Divacancy Defects in
Mg-Implanted GaN Using MOS Structures
Yuki Hatakeyama1, Genta Shindo1, Yuliu Luo1, Masamichi Akazawa1
1
RCIQE, Hokkaido Univ., Japan

CH6-6 （Oral）

12:20 - 12:35

Depth Analysis of Acceptor and Compensating Donor Concentrations in Mgimplanted p-GaN with Ultra-High-Pressure Annealing
Kensuke Sumida1, Masahiro Horita1, Tetsu Kachi1, Jun Suda1
1
Nagoya University, Japan

CH6-7 （Oral）

12:35 - 12:50

Depth profiling of Mg acceptor concentration by stepwise etching andphotoluminescence for Mg ion implanted GaN annealed at 1300 ℃
Keita Kataoka1, Tetsuo Narita1, Kazuyoshi Tomita2, Shinji Yamada3, Tetsu Kachi2
1
Toyota Central R&D Labs., Inc., Japan, 2 IMaSS, Nagoya University, Japan, 3 Graduate School ofEngineering, Nagoya University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD4: Visible LEDs
Argos F

November 14 (Tue) 10:55 -12:45

Chair : Tatsushi Hamaguchi, Susumu Noda

OD4-1 （Invited）

10:55 - 11:20

Recent advances in nitride LED technology for green-to-red wavelengths
Robert Armitage1, Zhongmin Ren1, Mark Holmes1, Joseph Flemish1, Xuefeng Li2, Daniel Feezell2, Nick
Pant3, Emmanouil Kioupakis3, Sheikh Ifatur Rahman4, Siddharth Rajan4, Andrew Armstrong5
1
Lumileds LLC, United States of America, 2 University of New Mexico, United States of America, 3
University of Michigan, United States of America, 4 The Ohio State University, United States of America, 5Sandia National Laboratories, United States of America

OD4-2 （Oral）

11:20 - 11:35

Origins of the high-energy electroluminescence peaks in long-wavelength InGaN
light-emitting diodes
Yi Chao Chow1, Tanay Tak1, Feng Wu1, Shuji Nakamura1, Steve DenBaars1, Claude Weisbuch1,2, JamesSpeck1
1
University of California, Santa Barbara, United States of America, 2 Ecole Polytechnique, France

OD4-3 （Oral）

11:35 - 11:50

InGaN Red LEDs Fabricated by Hydrogen Plasma Passivation
Cesur ALTINKAYA1,2, Pavel KIRILENKO2, Daisuke IIDA2, Kazuhiro OHKAWA2
1
Material Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Saudi Arabia, 2 Electrical and Computer Engineering
Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Saudi Arabia

OD4-4 （Oral）

11:50 - 12:05

Carrier transport dynamics of different InGaN/GaN quantum wells with varying
thickness using micro-photoluminescence
Conny Becht1, Ulrich T. Schwarz1, Michael Binder2, Ingrid Koslow2, Bastian Galler2, Thomas F.K.
Weatherley3, Jean-François Carlin3, Nicolas Grandjean31Institute of Physics, Chemnitz University of Technology, Germany, 2 ams-OSRAM International GmbH,Germany, 3 Ecole Polytechnique Fédérale de Lausanne, Switzerland

OD4-5 （Oral）

12:05 - 12:20

GaInN-based blue LED with PEDOT/PSS hole transporting layer
YUMA KATO1, SATOSHI KAMIYAMA1, TETSUYA TAKEUCHI1, MOTOAKI IWAYA1
1
Meijo Univ., Japan

OD4-6 （Invited）

12:20 - 12:45

Recent Advances in III-Nitrides for MicroLEDs and Laser Diodes
Steven P. DenBaars1, Matt Wong1, Jordan Smith1, EMily Trageser1, Panpan LI1, Jake Ewing1, Amy Zhang1,
Vince Rienzi1, Michael Gordon1, James Speck1, Stacia Keller1, Umesh Mishra1, Shuji Nakamura1
1
University of California Santa Barbara, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

LN1: Late News I
Navis A

November 14 (Tue) 10:55 -12:50

Chair : Subramaniam Arulkumaran, Akio Wakejima

LN1-1 （Invited）

10:55 - 11:20

First Demonstration of Ferroelectricity and High-K Dielectric Constant in
Ultrawide Bandgap AlBN MBE Films
Chandrashekhar P Savant1, Ved Gund1, Kazuki Nomoto1, Takuya Maeda1, Shubham Jadhav1, Thai-Son
Nguyen1, Yu-Hsin Chen1, Len Van Deurzen1, Amit Lal1, Huili Grace Xing1, Debdeep Jena1
1
Cornell University, United States of America

LN1-2 （Oral）

11:20 - 11:35

Electron mobility enhancement and Shubnikov-de Haas oscillations in delta-doped
AlN/GaN/AlN Quantum-well HEMTs on Single-crystal AlN Substrates
Yu-Hsin Chen1, Jimy Encomendero1, Chuan Chang1, Huili Grace Xing1, Debdeep Jena1
1
Cornell university, United States of America

LN1-3 （Oral）

11:35 - 11:50

Suppression of Enhanced Diffusion during High Pressure Annealing of Magnesium
Implanted GaN
Alan G Jacobs1, Boris N Feigelson1, James S Lundh1, Joseph A Spencer1,2, Brendan P Gunning3, Robert J
Kaplar3, Marko J Tadjer1, Karl D Hobart1, Travis J Anderson1
1
U.S. Naval Research Laboratory, United States of America, 2 Virginia Tech, United States of America, 3Sandia National Laboratories, United States of America

LN1-4 （Oral）

11:50 - 12:05

Fin-length scaling of vertical 100-fin GaN FinFETs on sapphire resulting in
maximum frequency of oscillation fmax = 9.5 GHz
Matthias Sinnwell1, Michael Dammann1, Rachid Driad1, Philipp Döring1, Sebastian Krause1, Stefan
Müller1, Michael Mikulla1, Rüdiger Quay1
1
Fraunhofer Institute for Applied Solid State Physics, Germany

LN1-5 （Oral）

12:05 - 12:20

State-of-the-art thermal performance in AlN-buffer HEMTs
Austin Hickman1, Shankar Miller-Murthy1, Jimy Encomendero2, Zexuan Zhang2, Huili Grace Xing2,
Debdeep Jena2
1
Soctera, Inc., United States of America, 2 Cornell University, United States of America

LN1-6 （Oral）

12:20 - 12:35

Significantly Different Barrier Heights in GaN/NbN Epitaxial Heterostructures on
Nitrogen- and Metal-polar single-crystal GaN substrates
Anand Ithepalli1, John Wright1, Jimy Encomendero Risco1, Huili (Grace) Xing1, Debdeep Jena1
1
Cornell University, United States of America

LN1-7 （Oral）

12:35 - 12:50

Study of growth mechanism in novel N-rich nitride AlPN: Toward AlPN/GaN highelectron mobility transistors with improved transconductance linearity
Yixin Yao1, Yachao Zhang1, Kui Dang1, Jiaduo Zhu1, Shengrui Xu1, Jincheng Zhang1, Yue Hao1
1
State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School ofMicroelectronics, Xidian University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR6: AlGaN I
Navis B

November 14 (Tue) 10:55 -12:50

Chair : Michael Kneissl, Narihito Okada

GR6-1 （Invited）

10:55 - 11:20

Advances in the epitaxial growth of far-ultraviolet C light emitting diodes
Tim Kolbe1, Arne Knauer1, Sylvia Hagedorn1, Jens Rass1, Hyun Kyong Cho1, Jan Ruschel1, Jakob Höpfner2,
Fedir Bilchenko2, Anton Muhin2, Martin Guttmann1, Michael Kneissl1,2, Sven Einfeldt1, Markus Weyers1
1
Ferdinand-Braun-Institut (FBH), Germany, 2 Institute of Solid State Physics, Technische Universität
Berlin, Germany

GR6-2 （Oral）

11:20 - 11:35

Homoepitaxial regrowth of AlGaN on chemically-mechanically polished AlGaN
templates and its application to UV-B laser diodes
Ryoya Yamada1, Ryosuke Kondo1, Koki Hattori1, Toma Nishibayashi1, Yoshinori Imoto1, Eri Matsubara1,
Sho Iwayama1, Motoaki Iwaya1, Tetsuya Takeuhi1, Satoshi Kamiyama1, HIdeto Miyake2
1
Meijo university , Japan, 2 Mie univercity, Japan

GR6-3 （Oral）

11:35 - 11:50

MOCVD of AlGaN-MQWs Grown on Stain Relaxed Superlattice DBR Buffer
Layers toward UV top-emission LEDs
Hisashi Yamada1, Naoto Kumagai1, Toshikazu Yamada1
1
The National Institute of Advanced Industrial Science and Technology, Japan

GR6-4 （Oral）

11:50 - 12:05

MOCVD overgrowth of μ-honeycomb AlGaN structures
Sandeep M. Singh1,2, Vitaly Zubialevich1, Peter James Parbrook1,2
1
Tyndall National Institute, University College Cork, 2 School of Engineering, University College Cork

GR6-5 （Oral）

12:05 - 12:20

High quality a-plane AlGaN films grown on high temperature annealed a-plane
AlN/r-sapphire templates
Tingsong Cai1,2, Yanan Guo1,2, Zhibin Liu1,2, Jinmin Li1,2, Junxi Wang1,2, Jianchang Yan1,2
1
Institute of Semiconductors, Chinese Academy of Sciences, China, 2 University of Chinese Academy of
Sciences, China

GR6-6 （Oral）

12:20 - 12:35

Development of exfoliation technology for AlGaN from sapphire substrates using
saturated vapor pressure heated water and analysis of the mechanism
Eri Matsubara1, Toma Nishibayashi1, Ryosuke Kondo1, Ryoya Yamada1, Yoshinori Imoto1, Sho Iwayama1,
Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Shintaro Kobayashi3, Taiji Yamamoto3, Hideto
Miyake2
1
Meijo University, Japan, 2 Mie University, Japan, 3 Rigaku Corp, Japan

GR6-7 （Oral）

12:35 - 12:50

Relaxed AlGaN on native AlN and GaN substrates realized via heteroepitaxial
FACELOJack Almeter1, Ronny Kirste2, Seiji Mita2, Shashwat Rathkanthiwar1, J Houston Dycus3, James Loveless1,
Ramón Collazo1, Zlatko Sitar1,2
1
North Carolina State University, United States of America, 2 Adroit Materials, United States of America,
3
Advanced Microscopy, EAG Eurofins, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR7: Electron Devices
Navis C

November 14 (Tue) 10:55 -12:45

Chair : Alan Doolittle, Maki Kushimoto

GR7-1 （Invited）

10:55 - 11:20

Towards GaN Substrates for High-power Electronic Devices
Michal Bockowski1,2, Tomasz Sochacki1, Malgorzata Iwinska1, Robert Kucharski1
1
Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2 Nagoya University, Japan

GR7-2 （Oral）

11:20 - 11:35

GaN HEMT and SBD absence of plasma damage via polarization modulation
Wei Guo1, Yijun Dai1, Jichun Ye1
1
Ningbo Institute of Materials Technology and Engineering, CAS, China

GR7-3 （Oral）

11:35 - 11:50

High Electron Mobility Transistors with Ultrawide Bandgap AlGaN Digital Alloy
Channels using GaN-AlN short-period superlattices
Abdullah Mamun1, Kamal Hussain1, Shahab Mollah1, Abdullah Al Mamun Mazumder1, Tariq Jamil1,
Kenneth Stephenson1, MD TANVIR HASAN1, MVS Chandrashekhar1, Grigory Simin1, Asif Khan1
1
University of South Carolina, United States of America

GR7-4 （Oral）

11:50 - 12:05

Tuning composition in graded AlGaN channel and high-Al content AlGaN/GaN
HEMTs for high frequency and high linearity applications
Alexis Papamichail1, Axel R. Persson1, Steffen Richter1,4, Philipp Kühne1, Vallery Stanishev1, Per O. Å.
Persson1, Ragnar Ferrand-Drake Del Castillo2, Andreas Divinyi3, Mattias Thorsell2,3, Hans Hjelmgren2,
Plamen P. Paskov1, Niklas Rorsman2, Vanya Darakchieva1,4
1
Center for III-Nitride Technology, C3NiT-Janzén, Linköping University, Sweden, 2 Department ofMicrotechnology and Nanoscience, Chalmers University of Technology, Sweden, 3 Saab AB, Sweden, 4Center for III-Nitride Technology, C3NiT-Janzén, and NanoLund, Lund University, Sweden

GR7-5 （Oral）

12:05 - 12:20

MOCVD GaN HEMT epitaxy on high-temperature PVD AlN deposited on 200mm
Si (111)
Helen Zhao1, Donny Yang1, Shiva Rai1, Joseph Park2, Richard Molnard2, Michel Khoury1
1
Applied Materials, Inc., United States of America, 2 Massachusetts Institute of Technology, United Statesof America

GR7-6 （Invited）

12:20 - 12:45

Semiconducting AlN Electrical Devices
Alan Doolittle1, Christopher M. Matthews1, Habib Ahmad1, Keisuke Motoki1, Emily N. Marshall1, Anusha
Krishnan1, Sangho Lee1, Samuel Graham2, Amanda Tang1
1
Georgia Institute of Technology, United States of America, 2 University of Maryland, United States ofAmericaLunch

12:50 -14:50

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Women in Nitrides
Argos D

November 14 (Tue) 13:00 -14:30

ED5: MOS Interface / MOSFETs
Argos D

November 14 (Tue) 14:50 -17:00

Chair : Masamichi Akazawa, Tohru Oka

ED5-1 （Invited）

14:50 - 15:15

MOS interface technologies for high-power and high-frequency GaN transistors
Tamotsu Hashizume1,2, Masamichi Akazawa2
1
Nagoya Univ. and Hokkaido Univ., Japan, 2 Hokkaido Univ., Japan

ED5-2 （Oral）

15:15 - 15:30

Over 200 cm2 V−1 s−1 of electron inversion channel mobility for AlSiO/AlN/p-type
GaN MOSFETs
Tetsuo Narita1, Kenji Ito1, Shiro Iwasaki1, Kazuyoshi Tomita2, Emi Kano2, Nobuyuki Ikarashi2, Keita
Kataoka1, Daigo Kikuta1
1
Toyota Central R&D Labs., Inc., Japan, 2 IMaSS, Nagoya University, Japan

ED5-3 （Oral）

15:30 - 15:45

MOS Channel Characteristics of Mg-implanted Lateral GaN MOSFETs Activatedby Ultra-High-Pressure-Annealing method
Ryo Tanaka1, Shinya Takashima1, Katsunori Ueno1, Tsurugi Kondo1, Takuro Inamoto1, Masaharu Edo1,
Michal Bockowski2, Tetsu Kachi3
1
Fuji Electric Co., Ltd., Japan, 2 Polish Academy of Sciences, Poland, 3 Nagoya University, Japan

ED5-4 （Oral）

15:45 - 16:00

Effects of GaN/SiO2 interfacial oxidation on GaN MOSFET
Tsurugi Kondo1, Katsunori Ueno1, Ryo Tanaka1, Shinya Takashima1, Masaharu Edo1, Tomoyuki Suwa2
1
Fuji Electric Co., Ltd., Japan, 2 NICHe, Tohoku University, Japan

ED5-5 （Oral）

16:00 - 16:15

Improvement of AlSiO/n-GaN MOS characteristics by ultra-high-pressure postdeposition annealing
Takumi Hirata1, Masakazu Kanechika1, Tomoya Tokozumi1, Tetsu Kachi1, Jun Suda1
1
Nagoya University, Japan

ED5-6 （Oral）

16:15 - 16:30

SiO2/GaN interface improvement by wet etching and in situ annealing for GaN
MOSFETs
Mirjam Henn1,2, Christian Huber1, Humberto Rodriguez-Alvarez1, Nando Kaminski2
1
Robert Bosch GmbH, Germany, 2 University of Bremen, Germany

ED5-7 （Oral）

16:30 - 16:45

Real-time observation of oxidation process on GaN surfaces by x-ray photoelectron
spectroscopy
Masatomo Sumiya1, Yasutaka Tsuda2, Masato Sumita3, Akitaka Yoshigoe2
1National Institute for Materials Science, Japan, 2 Japan Atomic Energy Agency, Japan, 3 RIKEN, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED5-8-LN （Oral）

16:45 - 17:00
2

Enhanced Field-Effect Mobility ( > 250 cm /Vs) in GaN MOSFETs featuring MistChemical-Vapor-Deposited Gate Oxides
Kazuki Ikeyama1, Hidemoto Tomita1, Hiroki Miyake1, Yoshitaka Nagasato1, Li Liu2, Toshiyuki
Kawaharamura2
1
MIRISE Technologies, Japan, 2 Kochi University of Technology, Japan

CH7: Characterization for Electron Devices II
Argos E

November 14 (Tue) 14:50 -16:45

Chair : Yasuo Koide, Matteo Meneghini

CH7-1 （Invited）

14:50 - 15:15

Characterization of nitrogen-displacement-related traps in GaN
Masahiro Horita1, Jun Suda1
1
Nagoya University, Japan

CH7-2 （Oral）

15:15 - 15:30

Impact of Carbon Doping Levels in AlGaN Back-Barriers for GaN HEMTs
Ragnar Michel Ferrand-Drake del Castillo1, Ding-Yuan Chen1,2, Jr-Tai Chen2, Niklas Rorsman1
1
Chalmers University of Technology, Sweden, 2 SweGaN, Sweden

CH7-3 （Oral）

15:30 - 15:45

Presence of High Density Positive Fixed Charges at ALD-Al2O3/GaN Interface for
Efficient Recovery of 2-DEG in Ultrathin-barrier AlGaN/GaN Heterostructure
Han Zhang1,2, Sen Huang1,2, Fuqiang Guo1,2, Kexin Deng1,2, Qimeng Jiang1,2, Haibo Yin1, Ke Wei1,2, Xinyu
Liu1,2
1
Institute of Microelectronis of China Academy of Sciences, China, 2 University of Chinese Academy of
Sciences, China

CH7-4 （Oral）

15:45 - 16:00

Role of Lateral Hole Transport and Evacuation in dRDS,on during Off-State Stress in
p-GaN Gate HEMTs
Boris Butej1,3, Christian Koller1, Dominik Wieland2,3, Gregor Pobegen1, Dionyz Pogany3, Clemens
Ostermaier2
1
KAI Kompetenzzentrum Automobil- und Industrieelektronik GmbH, Austria, 2 Infineon Technologies
Austria AG, Austria, 3 Vienna University of Technology, Austria

CH7-5 （Oral）

16:00 - 16:15

A new insight on the co-existence of two-dimensional electron- and hole-gases andtheir properties in III-N heterostructures
Ravikiran Lingaparthi1, Dharmarasu Nethaji1, Radhakrishanan K1,2,3, Shashank Patwal2, Lili Huo3
1
Temasek Laboratories, Nayang Technological University, Singapore, 2 Centre for Micro/Nano-electronics(CMNE), Nanyang Technological University, Singapore, 3 3UMI3288 CINTRA, (CNRS/NTU/THALES),
Singapore

CH7-6 （Oral）

16:15 - 16:30

1000 K operation of SBDs and MESFETs with Si-implanted AlN channel
Hironori Okumura1, Yasuhiro Watanabe2, Tomohiko Shibata2
1
University of Tsukuba, Japan, 2 Dowa Electronics Materials Co., Ltd, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH7-7 （Oral）

16:30 - 16:45

Defect Characterization of GaN stacks for Vertical Device Fabrication on 200 mm
Engineered Substrates by TEM, CL and ECCI
Sourish Banerjee1, Han Han1, Olivier Richard1, Anurag Vohra1, Karen Geens1, Herwig Hahn2, VladimirOdnoblyudov3, Robert Langer1, Stefaan Decoutere1
1
IMEC, Belgium, 2 AIXTRON SE, Germany, 3 Qromis, Inc., United States of America

LN2: Late News II
Argos F

November 14 (Tue) 14:50 -16:50

Chair : Armin Dadgar, Ryota Ishii

LN2-1 （Oral）

14:50 - 15:05

Homoepitaxial growth of thick AlN layers by HVPE using solid AlCl3
Toshinari Nukaga1, Hideyuki Sakano2, Takao Nishida1, Ken Goto2, Takayuki Kai1, Masahiko Tsuchiya1,
Ken Sasakura1, Yoshinao Kumagai2
1
Stanley Electric Co., Ltd., Japan, 2 Tokyo University of Agriculture and Technology, Japan

LN2-2 （Oral）

15:05 - 15:20

Chemically Pure Hydride Vapor Phase Epitaxy (HVPE) for GaN-on-GaN Device
Epilayers
Jacob Leach1, Kevin Udwary1, Gregg Dodson1, Heather Splawn1
1
Kyma Technologies, United States of America

LN2-3 （Oral）

15:20 - 15:35

Sidewall etching effect on internal quantum efficiency and light extraction efficiencyof micro-LEDs
Jeong-Hwan Park 1, Markus Pristovsek1, Wentao Cai1, Heajeong Cheong1, Atsushi Tanaka1, Yuta Furusawa1,
Dong-Pyro Han2, Tae-Yeon Seong3, Hiroshi Amano1
1
Nagoya University, Japan, 2 Hanyang University, Korea, 3 Korea University, Korea

LN2-4 （Oral）

15:35 - 15:50

Creation of Sub-micron Light-emitting Diode Pixel Arrays by Helium Ion
Irradiation without the Use of Mask and Etching Process
Ji-Hwan Moon1, Baul Kim1, Minho Choi1, Kie Young Woo1, Byung Su Kim1, Seonghun Ahn1, Seongmoon
Jun1, Yong-Ho Song1, Yong-Hoon Cho11
Korea Advanced Institute of Science and Technology , Korea

LN2-5 （Oral）

15:50 - 16:05

Excitons in (Al,Ga)N Quantum Dots and Quantum wells Grown on (0001)-oriented
AlN Templates: Emission Diagrams and Valence Band Mixings
Alexandra Ibanez1, Nikita Nikitskii2, Aly Zaiter2, Pierre Valvin1, Wilfried Desrat1, Thomas Cohen1,
Muhammad Ajmal Khan3, Guillaume Cassabois1, Hideki Hirayama3, Julien Brault2, Bernard Gil1
1
Laboratoire Charles Coulomb, CNRS, Université de Montpellier, France, 2 Cote d'Azur University CRHEA - CNRS, France, 3 RIKEN Cluster for Pioneering Research (CPR), Japan

LN2-6 （Oral）

16:05 - 16:20

Design of highly efficient InGaN-based circularly polarized LEDs integrated with
Si3N4 metasurface
Yuki Murata1, Shuhei Ichikawa1,2, Shintaro Toda3, Yasufumi Fujiwara1, Kazunobu Kojima1
1
Graduate School of Engineering, Osaka University, Japan, 2 Research Center for UHVEM, Osaka
University, Japan, 3 ULVAC-Osaka University Joint Research Laboratory for Future Technology, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

LN2-7 （Oral）

16:20 - 16:35

GaN(1-100): a new platform for the epitaxy of twin-free cubic nitrides?
Philipp John1, Duc Van Dinh1, Achim Trampert1, Lutz Geelhaar1, Oliver Brandt1, Thomas Auzelle1
1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V.,
Germany

LN2-8 （Oral）

16:35 - 16:50

Transmission electron microscopy of NbN/III-N heterostructures for metal-basedtransistors
Anna Kaleta1,4, Antoine Pedeches2, Helene Rotella2, Marie-Pierre Chauvat1, Magali Morales1, Sylvain
Delage3, Nicolas Delpuech3, Nicolas Michel3, Slawomir Kret4, Piotr Dluzewski4, Fabrice Semond2, Pierre
Ruterana1
1
CIMAP, UMR 6252 CNRS, Caen, France, 2 Université Côte d’Azur, CNRS, CRHEA, rue Bernard Grégory,
06905 Sophia Antipolis, France, 3 III-V Lab, 91767 Palaiseau, France, 4 Institute of Physics Polish
Academyof Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland

OD5: UV Lasers
Navis A

November 14 (Tue) 14:50 -16:40

Chair : Raphaël Butté, Yoshiki Saito

OD5-1 （Invited）

14:50 - 15:15

Recent Progress of Deep Ultraviolet Laser Diodes on AlN substrate
Maki Kushimoto1, Ziyi Zhang1,2, Akira Yoshikawa1,2, Koji Aoto1, Yoshio Honda1, Leo J Schowalter1, Chiaki
Sasaoka1, Hiroshi Amano1
1
Nagoya University, Japan, 2 Asahi Kasei Corporation, Japan

OD5-2 （Invited）

15:15 - 15:40

Progress in the development of UV-B laser diodes fabricated on sapphire substrates
Motoaki Iwaya1, Sho Iwayama1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2
1
Department of Materials Science and Engineering, Meijo University, Japan, 2 Department of Electricaland Electronic Engineering, Mie University, Japan

OD5-3 （Oral）

15:40 - 15:55

Optical gain in AlGaN quantum wells for low-threshold UVC lasers
Giulia Cardinali1, Alexander Schulz1, Sebastian Kölle2, Friedhard Römer2, Bernd Witzigmann2, Norman
Susilo1, Daniel Hauer Vidal1, Martin Guttmann1, Tim Wernicke1, Michael Kneissl1,3
1Technische Universität Berlin, Insitute of Solid State Physics, Germany, 2 Friedrich-Alexander-Universität
Erlangen-Nürnberg, Institute for Optoelectronics, Germany, 3 Ferdinand-Braun-Institut (FBH), Germany

OD5-4 （Oral）

15:55 - 16:10

Improvement of carrier injection efficiency of UV-B LDs by through polarization
charge modulation
Ryosuke Kondo1, Koki Hattori1, Yoshinori Imoto1, Ryoya Yamada1, Sho Iwayama1, Motoaki Iwaya1,
Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2
1
Meijo University, Japan, 2 Mie University, Japan

OD5-5 （Oral）

16:10 - 16:25

UVC photonic crystal surface-emitting lasers with low-divergent far-fields
Dogukan Apaydin1, Lukas Uhlig2, Joachim Ciers1, Hjalmar Andersson1, Sarina Graupeter3, Giulia
Cardinali3, Tim Wernicke3, Michael Kneissl3,4, Philippe Tassin1, Ulrich Theodor Schwarz2, Åsa Haglund1
1
Chalmers University of Technology, Sweden, 2 Chemnitz University of Technology, Germany, 3 Technical
University of Berlin, Germany, 4 Ferdinand-Braun-Institut , Germany

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD5-6 （Oral）

16:25 - 16:40

Optically pumped UVC VCSELs with precise cavity length
Estrella Torres Vásquez1, Joachim Ciers1, Nelson Rebelo1, Filip Hjort1, Michael Bergmann1, Sarina
Graupeter2, Giulia Cardinali2, Johannes Enslin2,3, Tim Wernicke2, Michael Kneissl2,3, Åsa Haglund1
1
Chalmers University of Technology, Sweden, 2 Technical University of Berlin, Germany, 3 FerdinandBraun-Institut, Germany

GR8: AlGaN II
Navis B

November 14 (Tue) 14:50 -16:45

Chair : Tomasz Sochacki, Kenjiro Uesugi

GR8-1 （Invited）

14:50 - 15:15

Progress of buffer free GaN on SiC HEMT heterostructures for RF and power
applications
Jr-Tai Chen1
1
SweGaN AB, Sweden

GR8-2 （Oral）

15:15 - 15:30

High-quality N-polar GaN/AlGaN/GaN/AlN HEMTs by multistep temperature andsupersaturation regime growth on off-cut SiC substrates
Ingemar Persson1, Hengfang Zhang1, Alexis Papamichail1,2, Per O.Å. Persson1, Jr-Tai Chen1,3, Philipp
Khüne1,2, Plamen Paskov1, Vanya Darakchieva1,2,4
1
Center for III-Nitride Technology, C3NiT – Janzén, Department of Physics, Chemistry and Biology (IFM),
Linköping University, Sweden, 2 Terahertz Materials Analysis Center, Linköping University, Sweden, 3
SweGaN AB,Sweden, 4 Center for III-Nitride Technology, C3NiT – Janzén, Division of Solid State Physics
and NanoLund, Lund University, Sweden

GR8-3 （Oral）

15:30 - 15:45

Highly conductive n- and p- type (AlN)m/(GaN)n digital alloys with high average Al
compositions grown by molecular beam epitaxy
Siqi Li1, Pengfei Shao1, Xiao Liang1, Songlin Chen1, Yiyang Wang1, Xiaoquan Xing1, Tao Tao1, Zili Xie1,
Bin Liu1, Xiangqian Xiu1, Youdou Zheng1, Rong Zhang1,2, Ke Wang1,3
1
Nanjing University, China, 2 Xiamen University, China, 3 RIKEN, Japan

GR8-4 （Oral）

15:45 - 16:00

Strain and Energy Band Engineering in thick AlGaN Drift Layers for High Power
Vertical Transistors
Byeongchan So1, Philipp Gribisch2, Adamantia Logotheti1, André Andersen2, Andri Dhora1, Dat Tran3,
Philipp Kühne3, Viktor Rindert1, Steffen Richter1, Erik Lind2, Vanya Darakchieva1,3
1
Center for III-Nitride Technology, C3NiT-Janzén, Solid State Physics and NanoLund, Lund University,
Sweden, 2 Department of Electrical and Information Technology and NanoLund, Lund University, Sweden,
3
Center for III-Nitride Technology, C3NiT-Janzén, Chemistry and Biology (IFM), Linköping University,
SwedenGR8-5 （Oral）

16:00 - 16:15

Regrowth Contacts Technology for Extreme Bandgap AlN/AlxGa1-xN (x > 0.6)
Heterostructures
Kamal Hussain1, Abdullah Mamun1, Kenneth Stephenson1, Richard Floyd1, Abdullah Al Mamun
Mazumder1, Mafruda Rahman1, Tariq Jamil1, MD TANVIR HASAN1, Grigory Simin1, MVS
Chandrashekhar1, Asif Khan1
1
University of South Carolina, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR8-6 （Oral）

16:15 - 16:30

Growth and characterization of highly Si-doped AlxGa1-xN (0 < x ≦ 0.81) films
prepared via pulsed sputtering deposition
Kohei Ueno1, Yuto Nishikawa1, Atsushi Kobayashi2, Hiroshi Fujioka1
1
Institute of Industrial Science, The University of Tokyo, Japan, 2 Depertment of Materials Science andTechnology, Tokyo University of Science, Japan

GR8-7 （Oral）

16:30 - 16:45

Preliminary Studies on Halide Vapor Phase Epitaxy of AlGaN Alloy on GaN
Substrates
Tomasz Sochacki1, Slawek Sakowski1, Pawel Kempisty1, Piotr Jaroszynski1, Kacper Sierakowski1,
Boleslaw Lucznik1, Michal Fijalkowski1, Michal Bockowski1,2
1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2 CIRFE, IMaSS, Nagoya
University, Japan

GR9: MBE and Sputtering
Navis C

November 14 (Tue) 14:50 -16:45

Chair : Julien Brault, Takayuki Nakano

GR9-1 （Invited）

14:50 - 15:15

Fabrication of AlN/AlGaN/AlN multi-channel structures with sputtering-regrownhighly degenerate n+-GaN ohmic contacts
Takao Kozaka1, Ryota Maeda1, Kohei Ueno1, Hiroshi Fujioka1
1
Institute of Industrial Science, the University of Tokyo, Japan

GR9-2 （Oral）

15:15 - 15:30

Si-doping characteristics of GaN/AlN SPSL structures used in Silanna UV far UVC
LEDs
Jessica Chai11Silanna UV, Australia

GR9-3 （Oral）

15:30 - 15:45

Sputtering Epitaxial Integration of AlN and NbN for Polarity Control and CrystalPhase Manipulation
Atsushi Kobayashi1, Shunya Kihira2, Takahito Takeda2, Masaki Kobayashi2, Takuya Maeda2, Takayuki
Harada3, Toru Akiyama4, Takahiro Kawamura4, Kohei Ueno2, Hiroshi Fujioka2
1
Tokyo University of Science, Japan, 2 The University of Tokyo, Japan, 3 National Institute for Materials
Science, Japan, 4 Mie University, Japan

GR9-4 （Oral）

15:45 - 16:00

Selectively regrown heavily Si-doped degenerate GaN contact to AlN/AlGaN
HEMTs prepared via pulsed sputtering
Ryota Maeda1, Takao Kozaka1, Kohei Ueno1, Atsushi Kobayashi2, Hiroshi Fujioka1
1
Institute of Industrial Science, The University of Tokyo, Japan, 2 Department of Materials Science andTechnology, Tokyo University of Science, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR9-5 （Oral）

16:00 - 16:15

Controlling Polarity of Bilayer Polarity Inverted AlN Fabricated by Single HighTemperature Annealing of Sputtered AlN
Kanako Shojiki1, Takumi Hashimoto2, Kenjiro Uesugi2,3, Hideto Miyake1
1
Mie University, Grad. Sch. of Eng., Japan, 2 Mie University, Grad. Sch. of RIS, Japan, 3 Mie University,
ORIP, Japan

GR9-6 （Oral）

16:15 - 16:30

NbN/AlGaN Heterostructures Grown by NH3-MBE on Silicon Substrates
Fabrice Semond1, Antoine Pedeches1, Hélène Rotella1
1
Université Côte d'Azur, CNRS-CRHEA, France

GR9-7 （Oral）

16:30 - 16:45

Highly doped N-type Gallium Nitride Growth Technology by Nitrogen Radicalassisted Sputtering
Masanori Shirai1, Hiroki Kobayashi1
1
ULVAC,Inc., Japan

Poster Session II
Argos A-C

November 14 (Tue) 16:45 -18:35

Light Meal

18:35 -19:00

Rump Session
November 14 (Tue) 19:00 -21:00

R1: GaN Vertical Power Devices
Argos D

November 14 (Tue) 19:00 -21:00

R2: Deep UV Lasers and LEDs, AlN/AlGaN
Argos E

November 14 (Tue) 19:00 -21:00

R3: Visible, MicroLEDs, VCSELs
Argos F

November 14 (Tue) 19:00 -21:00

The 14th International Conference on Nitride Semiconductors (ICNS-14)

November 15(Wed)

ED6: RF I
Argos D

November 15 (Wed) 8:30 -9:55

Chair : Yuji Ando, Debdeep Jena

ED6-1 （Invited）

8:30 - 8:55

Current status of high output power GaN-based HEMTs on AlN substrates
Atsushi Yamada1, Yuichi Minoura1, Shiro Ozaki1, Masaru Sato1, Toshihiro Ohki1, Norikazu Nakamura1
1
Fujitsu Limited, Japan

ED6-2 （Oral）

8:55 - 9:10

Device characteristics of AlGaInN/GaN HEMTs with a thin 150-nm-thick UID-GaN
channel fabricated on single-crystal AlN substrate
Tomoyuki Kawaide1, Yoshinobu Kometani1, Sakura Tanaka1, Takashi Egawa1, Makoto Miyoshi1
1Nagoya Institute of Technology, Japan

ED6-3 （Oral）

9:10 - 9:25

RF GaN HEMTs on Engineered Substrate for High Temperature Applications
Pradyot Yadav1, Qingyun Xie1, John Niroula1, Gillian K. Micale1, Hridibrata Pal1, Tomás Palacios1
1
Massachusetts Institute of Technology, United States of America

ED6-4 （Oral）

9:25 - 9:40

Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation andreduced trapping effects
Kathia Harrouche1, Lyes Ben Hammou1, François Grandpierron1, Ajay Shanbhag1, Etienne Okada1, Farid
Medjdoub1
1
IEMN-CNRS, France

ED6-5 （Oral）

9:40 - 9:55

Low Dielectric Constant Fluorocarbon-Based Passivation for Current Collapse
Mitigation of RF GaN HEMTs
John Prakash1, Qingyun Xie1, Pradyot Yadav1, Gillian K Micale1, Elham Rafie Borujeny1, Tomas Palacios1
1
Massachusetts Institute of Technology, United States of America

GR10: InGaN I
Argos E

November 15 (Wed) 8:30 -9:55

Chair : Kazuhiro Ohkawa, James S. Speck

GR10-1 （Invited）

8:30 - 8:55

InGaN-based LEDs on arbitrary three-dimensional GaN templates toward tailoredspectral control
Mitsuru Funato1, Yoshinobu Matsuda1, Yoichi Kawakami1
1
Kyoto University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR10-2 （Oral）

8:55 - 9:10

Development of micropattern active region for improving the high In content InGaN
quantum wells
Adam Brejnak1, Anna Kafar1,2, Conny Becht3, Krzysztof Gibasiewicz1, Jacek Kacperski1,2, Lucja Marona1,2,
Szymon Grzanka1,2, Ulrich Theodor Schwarz3, Piotr Perlin1,2
1
Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland, Poland, 2 TopGaN Ltd., 00-403 Warsaw,
Poland, Poland, 3 Chemnitz University of Technology, 09111 Chemnitz, Germany, Germany

GR10-3 （Oral）

9:10 - 9:25

Red emitting InGaN nanopyramids grown on graphene/SiC
Amelie Dussaigne1, Colin Paillet1, Adeline Grenier1, Nevine Rochat1, Zineb Zaghi1, Audrey Jannaud1,
Adrien Michon2, Stéphane Vézian2, Benjamin Damilano2, Berangere Hyot1
1
CEA/Leti, France, 2 CRHEA/CNRS, France

GR10-4 （Oral）

9:25 - 9:40

Towards full-color µLEDs by selective area MOVPE
Cedric Lacam1, Joel Eymery2, Olivier Parillaud1
1
III-VLab / Thales Reasearch & Technology, France, 2 CEA-MEM, France

GR10-5 （Oral）

9:40 - 9:55
2

Demonstration of efficient ultra-small 5×5 µm InGaN red micro-light-emitting
diodesPanpan Li1, Hongjian Li1, Yunxuan Yang2, Haojun Zhang1, Pavel Shapturenka3, Matthew Wong1, Cheyenne
Lynsky1, Jake Ewing1, Mike Iza1, Michael J. Gordon3, James S. Speck1, Shuji Nakamura1,2, Steven P.
DenBaars1,2
1
Materials Department, University of California, Santa Barbara, United States of America, 2 Department
of Electrical and Computer Engineering, University of California, Santa Barbara, United States of America,
3
Department of Chemical Engineering, University of California, Santa Barbara, United States of America

OD6: Far UVC LEDs II
Argos F

November 15 (Wed) 8:30 -9:55

Chair : Hirotsugu Kobayashi, Tim Kolbe

OD6-1 （Invited）

8:30 - 8:55

Analyzing carrier transport and radiative recombination in AlGaN based UVC
LEDs
Tim Wernicke1, Jakob Höpfner1, Anton Muhin1, Marcel Schilling1, Massimo Grigoletto1,2, Giulia Cardinali1,
Martin Guttmann1,2, Verena Montag1, Norman Susilo1, Sarina Graupeter1, Luca Sulmoni1, Jan Ruschel2,
Sylvia Hagedorn2, Neysha Lobo-Ploch2, Jens Rass2, Hyun Kyong Cho2, Åsa Haglund3, Sven
Einfeldt2,Markus Weyers2, Michael Kneissl1,2
1Technische Universität Berlin, Institute of Solid State Physics, Germany, 2 Ferdiand-Braun-Institut (FBH),
Germany, 3 Chalmers University of Technology, Sweden

OD6-2 （Oral）

8:55 - 9:10

Efficiency Improvement of 225 nm Far-UVC LED by optimizing n-AlGaN Buffer
Layer
Taiga Kirihara1,2, Yukio Kashima1, Hiroyuki Yaguchi2, Yasushi Iwaisako3, Hideki Hirayama1
1
RIKEN, Japan, 2 Saitama University, Japan, 3 Nippon Tungsten, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD6-3 （Oral）

9:10 - 9:25

Far-UVC LEDs with high external quantum efficiency by micro LED array design
Jens Rass1, Hyun Kyong Cho1, Martin Guttmann1, Deepak Prasai1, Steffen Breuer1, Jan Ruschel1, Tim
Kolbe1, Tamukanashe Anthony Musengezi1, Sven Einfeldt1
1
Ferdinand-Braun-Institut (FBH), Germany

OD6-4 （Oral）

9:25 - 9:40

Demonstaration of 3.9 times efficiency increase in 232 nm AlGaN far-UVC LED with
Reflective Photonic Crystal
Yukio Kashima1, Eriko Matsuura1, Hidetoshi Shinohara2, Mitsunori Kokubo2, Makoto Fukuda3, Yamato
Osada3, Ryuichirou Kamimura3, Makoto Hara4, Takeshi Iwai4, Tugumu Nagano5, Junya Yoshinaga6,
Keitaro Ikejiri6, Syuuichi Koseki6, Hiroyuki Oogami7, Yasushi Iwaisako7, Minoru Kawahara8, Masato
Yamada8, Hideki Hirayama1
1
RIKEN, Japan, 2 Shibaura machine, Japan, 3 ULVAC, Japan, 4 Tokyo Ohka Kogyo, Japan, 5 DNP, Japan,
6
Taiyo Nippon Sanso, Japan, 7 Nippon Tungsten, Japan, 8 Shin-Etsu Chemical, Japan

OD6-5 （Oral）

9:40 - 9:55

MBE-grown AlN nanowire-based LEDs for UV-C emission
Rémy VERMEERSCH1,2, Damien CALISTE1, Gwénolé JACOPIN2, Julien PERNOT2, Bruno DAUDIN1
1
Université Grenoble-Alpes/ CEA-Grenoble, France, 2 Université Grenoble-Alpes/ CNRS-Institut Néel,
FranceOD7: PhC and nanowires
Navis A

November 15 (Wed) 8:30 -9:55

Chair : Katsumi Kishino, Michael Krames

OD7-1 （Invited）

8:30 - 8:55

Recent progress in photonic-crystal surface-emitting lasers
Susumu Noda1
1
Kyoto University, Japan

OD7-2 （Oral）

8:55 - 9:10

Topological Edge State Propagation of GaN-PhC in Visible Region
Yamato Takano1, Umito Kurabe1, Mirai Akimoto1, Takuto Honda1, Xiao Hu2, Akihiko Kikuchi1
1
Sophia University, Japan, 2 WPI-MANA, NIMS, Japan

OD7-3 （Oral）

9:10 - 9:25

Gan on Si Nanowire Technology Paves the Way to µLEDs for Display Applications
Pierre Tchoulfian1, Romain Cipro1, Zaiyuan Ren1, Timothée Lassiaz1, Yoann Malier1, Thomas Sannicolo1,
Philippe Gilet1
1
Aledia, France

OD7-4 （Oral）

9:25 - 9:40

Ultrahigh Efficiency Excitonic Micro-LEDs
Yixin Xiao1, Ayush Pandey1, Maddaka Reddeppa1, Yakshita Malhotra1, Yuanpeng Wu1, Yifu Guo1, Zetian
Mi1
1
University of Michigan, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD7-5 （Oral）

9:40 - 9:55

Morphological and emission properties of GaInN/GaN multi-quantum shell
nanowires with GaInN/GaN superlattice
Soma Inaba1, Weifang Lu2, Ayaka Shima1, Shiori Ii1, Mizuki Takahashi1, Yuki Yamanaka1, Yuta Hattori1,
Kosei Kubota1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki iwaya1
1
Meijo University, Japan, 2 Xiamen University, China

CH8: Micro- and Nanoscopic Analysis
Navis B

November 15 (Wed) 8:30 -10:00

Chair : Rachel Oliver, Akira Sakai

CH8-1 （Oral）

In-situ TEM Investigation
Sublimation in GaN

8:30 - 8:45

of

the

Lattice-Asymmetry-Driven Anisotropic

Tao Wang1, Shanshan Sheng1, Weikun Ge1, Ping Wang1, Bo Shen1, Xinqiang Wang1
1
Peking University, China

CH8-2 （Oral）

8:45 - 9:00

XRD Measurement Strategies for complex Heterostructures
Lars Grieger1, Andrey Zameshin1, Gareth Tye1
1
Malvern Panalytical B.V., Netherlands

CH8-3 （Oral）

9:00 - 9:15

In-situ dynamics of (a+c)-type misfit dislocations imaged by full-field X-ray
diffraction microscopy
Robert Kernke1, Carsten Richter1, Joanna Moneta2, Julita Smalc-Koziorowska2, Tobias Schülli3, Martin
Albrecht1, Tobias Schulz1
1
Leibniz Institute for Crystal Growth, Germany, 2 Institute of High Pressure Physics, Poland, 3 ESRF – The
European Synchrotron, France

CH8-4 （Oral）

9:15 - 9:30

Observation of dislocations in thick GaN substrates using synchrotron-radiation Xray topography based on anomalous transmission
Yongzhao Yao1, Yoshiyuki Tsusaka2, Keiichi Hirano3, Koji Sato1, Yoshihir Sugawara1, Yukari Ishikawa1
1
Japan Fine Ceramics Center, Japan, 2 University of Hyogo, Japan, 3 High Energy Accelerator Research
Organization (KEK), Japan

CH8-5 （Oral）

9:30 - 9:45

Electrical properties of dislocations in GaN structures for power devices: anapproach based on ultraviolet light assisted Kelvin Probe Force Microscopy
Jesús Ortiga-Fibla1, Núria Garro1, Frank Brunner2, Eldad Bahat Treidel2, Oliver Hilt2, Sven Besendörfer3,
Elke Meissner3, Ana Cros1
1
Institute of Materials Science (ICMUV), Spain, 2 Ferdinand-Braun-Institut (FBH), Germany, 3 Fraunhofer
Institute for Integrated Systems and Device Technology IISB, Germany

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH8-6 （Oral）

9:45 - 10:00

Characterization of distributed polarization doping based AlGaN p-n diodes grownby molecular beam epitaxy on bulk AlN substrates
Shivali Agrawal1, Len van Deurzen2, Jimy Encomendero3, Huili (Grace) Xing4, Debdeep Jena51
Cornell University, United States of America, 2 Cornell Univeristy , United States of America, 3 Cornell
University, United States of America, 4 Cornell University, United States of America, 5Cornell University,
United States of America

ED7: Vertical Power III
Navis C

November 15 (Wed) 8:30 -9:55

Chair : Andrew A.Allerman, Jun Suda

ED7-1 （Invited）

8:30 - 8:55

Vertical GaN Power Transistors on Low-Cost Substrates:Opportunities andChallenges
Frank Brunner1, Eldad Bahat Treidel1, Enrico Brusattera1, Oliver Hilt1, Sven Besendoerfer2, Elke Meissner2,
Herwig Hahn3, Michael Heuken3, Sondre Michler4, Christian Huber5, Markus Weyers1
1
Ferdinand-Braun-Institut (FBH), Germany, 2 Fraunhofer Institute for Integrated Systems and Device
Technology IISB, Germany, 3 AIXTRON SE, Germany, 4 Siltronic AG, Germany, 5 Robert Bosch
GmbH,Germany

ED7-2 （Oral）

8:55 - 9:10

Process optimization of Fully Vertical GaN-on-Silicon PIN diodes
Idriss ABID1, Youssef HAMDAOUI1, Sondre MICHLER2, Katir ZIOUCHE1, Farid MEDJDOUB1
1
CNRS-IEMN, France, 2 Department Innovation Management, Siltronic AG, Germany

ED7-3 （Oral）

9:10 - 9:25

Vertical GaN FinFET devices on SiC and GaN substrates
Philipp Gribisch1,2, Rosalia Delgado Carrascon4, Byeongchan So2,3, Vanya Darakchieva2,3,4, Erik Lind1,2
1Electrical and Information Technology, Lund University, 22 100 Lund, Sweden, Sweden, 2 NanoLund andCenter for III-Nitride Technology, C3NiT-Janzén, Lund University, 22 100 Lund, Sweden, Sweden, 3 Physics
Department, Lund University, 22100 Lund, Sweden, Sweden, 4 Department of Physics, Chemistry andBiology and Center for III-Nitride Technology, C3NiT-Janzén, Linköping University, 581 83 Linköping,
Sweden, Sweden

ED7-4 （Oral）

9:25 - 9:40

Enhanced Thermal Dissipation in Substrate-Transferred GaN Schottky Barrier
Diode Devices by Laser Lift-Off Technology
Qi Wei1, Feng Zhou1, zong ei Xu1, Yu lei Jin1, Tian yang Zhou1, Fang fang Ren1, Dong Zhou1, jun Dun
Chen1, Rong Zhang1, You dou Zheng1,Hai Lu1
1Nanjing University, China

ED7-5 （Oral）

9:40 - 9:55

High Forward Current Density in Si-doped AlN Schottky Barrier Diodes
Cristyan Eduardo Quiñones1, Dolar Khachariya2, Pramod Reddy2, Jack Almeter1, Pegah Bagheri1, Ronny
Kirste2, Seiji Mita2, Spyridon Pavlidis1, Erhard Kohn1, Ramón Collazo1, Zlatko Sitar1,2
1
North Carolina State University, United States of America, 2 Adroit Materials, United States of America

Break

10:00 -10:25

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED8: RF II / New Materials and Structures I
Argos D

November 15 (Wed) 10:25 -11:45

Chair : Tomas Palacios, Akio Wakejima

ED8-1 （Invited）

10:25 - 10:50

On making GaN more efficient for RF applications
Srabanti Chowdhury1
1
Stanford University, United States of America

ED8-2 （Invited）

10:50 - 11:15

Growth of AlGaN/AlN based power electronic devices
Okhyun Nam1
1
Tech University of Korea, Korea

ED8-3 （Oral）

11:15 - 11:30

High-Linearity Planar-Nano-Channel AlN/GaN-on-Si MISHEMTs with AM-PM
Distortion Suppression
Hanghai Du1,2, Zhihong Liu1,2, Lu Hao1, Shuning Xu2, Weichuan Xing2, Jin Zhou2, Jincheng Zhang1,2, Yue
Hao1,2
1
School of Microelectronics, Xidian University, China, 2 Guangzhou Institute of Technology, Xidian
University, China

GR11: InGaN II
Argos E

November 15 (Wed) 10:25 -11:50

Chair : Mitsuru Funato, Piotr Perlin

GR11-1 （Oral）

10:25 - 10:40

Regrown MOCVD Highly Doped InGaN Source/Drain Layers for RF Transistors
Sourish Banerjee1, Ming Zhao1, Benjamin Vanhove1, Uthayasankaran Peralagu1, Alireza Alian1, Albert
Minj1, Herwig Hahn2, Robert Langer1, Bertrand Parvais1, Nadine Collaert1
1
IMEC, Belgium, 2 AIXTRON SE, Germany

GR11-2 （Oral）

10:40 - 10:55

MBE growth of cubic InxGa1-xN over the entire GaN/InN composition range
Mario Fabian Zscherp1, Silas Aurel Jentsch1, Marius Johannes Müller1, Vitalii Lider2, Celina Becker2,
Limei Chen1, Mario Littmann3, Falco Meier3, Andreas Beyer2, Detlev Michael Hofmann1, Donat Josef As3,Peter Jens Klar1, Kerstin Volz2, Sangam Chatterjee1, Jörg Schörmann1
1
Justus Liebig University Giessen, Germany, 2 Philipps University Marburg, Germany, 3 University ofPaderborn, Germany

GR11-3 （Oral）

10:55 - 11:10

Large critical thickness of InGaN grown by plasma-assisted MBE
Greg Muziol1, Marcin Krysko1, Marcin Siekacz1, Anna Feduniewicz-Zmuda1, Grzegorz Staszczak1, Ewa
Granka1, Julita Smalc-Koziorowska1, Czeslaw Skierbiszewski1
1
Institute of High Pressure Physics PAS, Poland

GR11-4 （Oral）

11:10 - 11:25

Fabrication of InGaN/GaN periodic heterostructure via THVPE method
Chiho Yamada1, Iori Kobayashi1, Hisashi Murakami1
1
Tokyo University of Agriculture and Technology, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR11-5 （Invited）

11:25 - 11:50

Low Sheet Resistance N-Polar InAlGaN/GaN HEMT
Robert Hamwey1, Nirupam Hatui1, Emre Akso 1, Feng Wu2, Stacia Keller1, James S. Speck2, Umesh
Mishra1
1
Department of Electrical and Computer Engineering, University of California, Santa Barbara, UnitedStates of America, 2 Materials Department, University of California, Santa Barbara, United States ofAmerica

OD8: Micro LEDs: Process
Argos F

November 15 (Wed) 10:25 -11:50

Chair : Robert Armitage, Takashi Matsuoka

OD8-1 （Invited）

10:25 - 10:50

InGaN-based red micro-LEDs via micro-flow-channel metalorganic vapor-phase
epitaxy
Kazuhiro Ohkawa1, Daisuke Iida1, Martin Velazquez-Rizo1, Pavel Kirilenko1
1
KAUST, Saudi Arabia

OD8-2 （Oral）

10:50 - 11:05

Demonstration of etching-free pixel definition through selective thermal oxidizationin InGaN-based micro-LEDs
Zhiyuan Liu1, Yi Lu1, Xiaohang Li1
1
King Abdullah University of Science and Technology, Saudi Arabia

OD8-3 （Oral）

11:05 - 11:20

Optimization of gate structure in hollow-structured MicroLED array for batch
transfer technique towards flexible LED film
Taiki Kitade1, Atsushi Nishikawa2, Alexander Loesing2, Masaki Shirai3, Hiroki Kobayashi3, Izumi
Fukunaga4, Hiroto Sekiguchi1
1
Toyohashi University of Technology, Japan, 2 ALLOS, Germany, 3 ULVAC, Japan, 4 OIST, Japan

OD8-4 （Oral）

11:20 - 11:35

Regrowth on Strain-relaxed Patterned GaN Templates to Achieve High-efficiency
Green Micro Light-emitting Diodes
pan zuojian1, chen zhizhong11peking university, China

OD8-5 （Oral）

11:35 - 11:50

Exploring the influence of fabrication methods on the optoelectronic performanceof µLEDs
Krzysztof Gibasiewicz1, Anna Kafar1,2, Łucja Marona1,2, Katarzyna Piotrowska-Wolińska1, Jacek
Kacperski2, Tadeusz Suski1, Piotr Perlin1,2
1
Institute of High Pressure Physics "Unipress" PAS, Poland, 2 Top-GaN Lasers Ltd. , Poland

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD9: Photodetectors
Navis A

November 15 (Wed) 10:25 -11:35

Chair : Koichi Okamoto, Hiroto Sekiguchi

OD9-1 （Invited）

10:25 - 10:50

Development of AlGaN based deep-ultraviolet avalanche photodetectors toward
their intrinsic characteristics
Theeradetch Detchprohm1, Hoon Jeong1, Zhiyu Xu1, Minkyu Cho1, Alexandra V. Dolgashev1, Davide
Balzerani1, Frank Menhke1, Shyh-Chiang Shen1, Nepomuk Otte1, Russell Dupuis1
1
Georgia Institute of Techonology, United States of America

OD9-2 （Oral）

10:50 - 11:05

Effect of Planarization and Device Architecture in Ultraviolet Photodetectors basedon GaN Nanowire Ensembles
Elçin Akar1, Arthur Bertot1, Martien den Hertog2, Eva Monroy1
1
CEA Grenoble, France, 2 Institut Néel, France

OD9-3 （Oral）

11:05 - 11:20

Enhanced transport of photo-excited carriers in (0001) InGaN photodiodes byintroducing compositionally graded layer
Heishiroh Dojo1, Shuhei Ichikawa1,2, Yoshinobu Matsuda3, Mitsuru Funato3, Yoichi Kawakami3, Kazunobu
Kojima1
1
Osaka University, Japan, 2 Rsearch Center for UHVEM, Osaka Univ, Japan, 3 Kyoto University, Japan

OD9-4 （Oral）

11:20 - 11:35

InGaN MQW photonic power converter under 394 nm laser irradiation
Ryusei Takahashi1, Shunki Hayashi1, Shunsuke Shibui1, Masahiro Koga1, Junichi Suzuki1, Reo Aoyama1,
Takahiro Noguchi1, Takahiro Fujisawa2, Toshihiko Fukamachi3, Koichi Naniwae3, Shiori Ii4, Ruka
Watanabe4, Makoto Miyoshi2, Tetsuya Takeuchi4, Satoshi Kamiyama4, Shiro Uchida11Chiba Institute of Technology, Japan, 2 Nagoya Institute of Technology, Japan, 3 Usio Inc., Japan, 4 Meijyo
University, Japan

CH9: AlGaN I
Navis B

November 15 (Wed) 10:25 -11:50

Chair : Bo Shen, Ziyi Zhang

CH9-1 （Invited）

10:25 - 10:50

Fundamental optical properties of AlN revealed by deep-ultraviolet spectroscopy
Ryota Ishii1, Akira Yoshikawa2, Mitsuru Funato1, Yoichi Kawakami1
1
Kyoto University, Japan, 2 Nagoya University, Japan

CH9-2 （Oral）

10:50 - 11:05

Effect on QWs Qualities of Thickness of Homoepitaxial AlN on AlN/sapphire
Prepared by Sputtering and High-temperature Annealing
Ryota Akaike1, Kenjiro Uesugi1, Kohei Shima2, Shigefusa F. Chichibu2, Akira Uedono3, Hideto Miyake1
1
Mie University, Japan, 2 Tohoku University, Japan, 3 University of Tsukuba, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH9-3 （Oral）

11:05 - 11:20

Temperature dependence of efficiency curves in AlGaN-based MQWs with emission
wavelengths from 220 to 260 nm
Hideaki Murotani1,2, Kosuke Inai1, Kunio Himeno1, Kaichi Tani1, Hiromasa Hayashi1, Satoshi Kurai1,
Narihito Okada1, Kenjiro Uesugi3, Hideto Miyake3, Yoichi Yamada1
1
Yamaguchi University, Japan, 2 National Institute of Technology, Tokuyama College, Japan, 3 Mie
University, Japan

CH9-4 （Oral）

11:20 - 11:35

Localized deep-ultraviolet luminescence of AlGaN grown on high-temperatureannealed AlN templates
Shuhei Ichikawa1,2, Kenjiro Uesugi3,4, Kazuki Saito1, Shiyu Xiao5, Kanako Shojiki1,5, Takao Nakamura5,
Hideto Miyake5, Kazunobu Kojima1
1
Graduate School of Engineering, Osaka University, Japan, 2 Research Center for UHVEM, Osaka
University, Japan, 3 Organization for Research Initiative and Promotion, Mie University, Japan, 4 Graduate
School of Regional Innovation Studies, Mie University, Japan, 5 Graduate School of Engineering, Mie
University, Japan

CH9-5 （Oral）

11:35 - 11:50

Ultra-low ionization energy level of Mg dopant in the Al0.9Ga0.1N and Al0.8Ga0.2N (1120) Digital Alloy
Xinhao Wang1, Jiaduo Zhu1, Shengrui Xu1, Jincheng Zhang1, Yue Hao1
1
Xidian University, China

JT3: Novel Materials and Devices
Navis C

November 15 (Wed) 10:25 -11:40

Chair : Vanya Darakchieva, Kohei Shima

JT3-1 （Oral）

10:25 - 10:40

Electrical properties of ScN layers grown on GaN(0001) by plasma-assisted
molecular beam epitaxy
Duc Dinh1, Oliver Brandt1
1Paul-Drude-Institut für Festkörperelektronik, Germany

JT3-2 （Oral）

10:40 - 10:55

Electronic States at the Interface of β-Nb2N/AlN Superlattices
Takahiro Kawamura1, Toru Akiyama1, Atsushi Kobayashi2
1
Graduate School of Engineering, Mie University, Japan, 2 Department of Materials Science andTechnology, Tokyo University of Science, Japan

JT3-3 （Oral）

10:55 - 11:10

Room Temperature Green Single Photon Emission from InGaN Quantum Dot
Positioned atop a GaN Nanowire
Swagata Bhunia1, Ayan Majumder2, Soumyadip Chatterjee2, Ritam Sarkar2, Dhiman Nag2, Kasturi Saha2,
Suddhasatta Mahapatra1, Apurba Laha2
1
Department of Physics, Indian Institute of Technology Bombay, Mumbai-400076, India, India, 2Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India,
India

The 14th International Conference on Nitride Semiconductors (ICNS-14)

JT3-4 （Oral）

11:10 - 11:25

Soft X-ray single photon detector based on GaN-on-GaN epi-layer with photon
energy analysis capability
Yiqiao Wei1, Weizong Xu1, Qunsi Yang1, Dong Zhou1, Feng Zhou1, Fangfang Ren1, Rong Zhang1, Youdou
Zheng1, Hai Lu1
1Nanjing University, China

JT3-5 （Oral）

11:25 - 11:40

Design and Fabrication of High Performance Porous GaN DBRs
Frederik Lüßmann1,2, Matthias Hoormann1,2, Jana Hartmann1,2, Florian Meierhofer1,2, Andreas Waag1,21Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer-Str. 66,
38106 Braunschweig, Germany, 2 Laboratory for Emerging Nanometrology (LENA), Technische
Universität Braunschweig, Langer Kamp 6,38106 Braunschweig, Germany

Excursion

12:00 -

The 14th International Conference on Nitride Semiconductors (ICNS-14)

November 16(Thu)

ED9: RF III
Argos D

November 16 (Thu) 8:30 -10:15

Chair : Farid Medjdoub, Keisuke Shinohara

ED9-1 （Oral）

8:30 - 8:45

Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes
Using Etch Endpoint Detection Process
Yuji Ando1, Kensuke Oishi1, Hidemasa Takahashi1, Ryutaro Makisako1, Akio Wakejima2, Jun Suda1
1
Nagoya University, Japan, 2 Nagoya Institute of Technology, Japan

ED9-2 （Oral）

8:45 - 9:00

Improvement of Breakdown Voltage by Utilizing Moderately-Doped Contact Layers
in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification
Tomoya Watanabe1, Hidemasa Takahashi1, Akio Wakejima2, Yuji Ando1,3, Jun Suda1,3
1
Department of Electronics, Nagoya University, Japan, 2 Nagoya Institute of Technology, Japan, 3 IMaSS,
Nagoya University, Japan

ED9-3 （Oral）

9:00 - 9:15

Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs
with an ALD-SiO2/Al2O3 double insulator
Toshiharu Kubo1, Takashi Egawa1
1
Nagoya Institute of Technology, Japan

ED9-4 （Oral）

9:15 - 9:30

High-Al-Composition Al0.65Ga0.35N/GaN-on-Si MISHEMTs Fabricated with CMOSCompatible Metallization for mm-Wave Applications
Hanlin Xie1, Zhongzhiguang Lu2, Hanchao Li2, Yue Wang3, Zhihong Liu4, Kumud Ranjan5, Lakshmi Kanta
Bera1, Huamao Lin1, Navab Singh1, Surasit Chung1, Yuanjin Zheng2, Kenneth Eng Kian Lee3,
Subramaniam Arulkumaran5, Geok Ing Ng2
1
Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore, 2
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 3 Low
Energy ElectronicSystems, Singapore-MIT Alliance for Research and Technology, Singapore, 4 Guangzhou
Institute of Technology, Xidian University, China, 5 Temasek Laboratories@NTU, Nanyang Technological
University, Singapore

ED9-5 （Oral）

9:30 - 9:45

Modal analysis of electronic metadevices: Understanding their ultra-high cut-off
frequency
Mohammad Rezaei1, Mohammad Samizadeh Nikoo1, Önder Soydal1, Elison Matioli1
1EPFL, Switzerland

ED9-6 （Oral）

9:45 - 10:00

15 GHz GaN Hi-Lo IMPATT diodes with pulsed peak power of 25.5 W
Seiya Kawasaki1, Takeru Kumabe1, Manato Deki1, Hirotaka Watanabe1, Atsushi Tanaka1, Yoshio Honda1,
Manabu Arai1, Hiroshi Amano1
1
Nagoya University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED9-7-LN （Oral）

10:00 - 10:15

Nitrogen-polar Deep-Recess GaN MISHEMT with Bias-Insensitive OIP3/PDC
Through Channel Corrugation
Henry Collins1, Emre Akso1, Nirupam Hatui1, Christopher Clymore1, Robert Hamwey1, Matthew Guidry1,
Stacia Keller1, Umesh K Mishra1
1
University of California Santa Barbara, United States of America

GR12: Bulk GaN
Argos E

November 16 (Thu) 8:30 -10:25

Chair : Hajime Fujikura, Siddha Pimputkar

GR12-1 （Invited）

8:30 - 8:55

Recent Progress of Bulk GaN Growth by Na-Flux Method
Yusuke Mori1, Shigeyoshi Usami1, Masayuki Imanishi1
1
Osaka University, Japan

GR12-2 （Oral）

8:55 - 9:10

Study of gallium nitride solubility in ammonothermal alkaline solution undervarious physicochemical conditions
Karolina Grabianska1, Robert Kucharski1, Tomasz Sochacki1, Michał Bockowski1,2
1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2 CIRFE, IMaSS, Nagoya
University, Japan

GR12-3 （Oral）

9:10 - 9:25

Fundamental Studies on Crystallization and Reaching the Equilibrium Shape of
GaN Crystal in Basic Ammonothermal Method
Tomasz Sochacki1, Robert Kucharski1, Karolina Grabianska1, Jan L Weyher1, Lutz Kirste2, Malgorzata
Iwinska1, Michal Bockowski1,3
1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2 Fraunhofer Institute for Applied
Solid State Physics (IAF), Germany, 3 CIRFE, IMaSS, Nagoya University, Japan

GR12-4 （Oral）

9:25 - 9:40

Evolution of temperature and ammonia flow at selected time points of alkalineammonothermal growth of gallium nitride crystals
Marek Zak1, Pawel Kempisty1, Boleslaw Lucznik1, Robert Kucharski1, Michal Bockowski1,2
1Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland , Poland, 2 CIRFE,
IMaSS, Nagoya University, Nagoya 464-8601, Japan, Japan

GR12-5 （Oral）

9:40 - 9:55

Toward mass production of GaN substrates by acidic ammonothermal technology
Yutaka Mikawa1, Yuji Kagamitani1, Takayuki Ishinabe1, Hirotaka Ikeda1, Tae Mochizuki1, Satoru
Izumisawa1, Takaya Ohuchi2, Kouhei Kurimoto2, Quanxi Bao2
1
Mitsubishi Chemical Corporation, Japan, 2 Japan Steel Works, Japan

GR12-6 （Oral）

9:55 - 10:10

Dislocation Reduction in GaN Crystals Using Facet Growth Caused by Meltback in
the Na-flux Method
Shogo Washida1, Masayuki Imanishi1, Kazuma Hamada1, Ricksen Tandryo1, Kosuke Murakami1,
Shigeyoshi Usami1, Mihoko Maruyama1, Masashi Yoshimura1,2, Yusuke Mori1
1
Osaka University, Japan, 2 ILE, Osaka University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR12-7 （Oral）

10:10 - 10:25

Analysis of Crystal Defects in GaN Substrates using Bragg Diffraction Imaging
Techniques and Defect Selective Etching – Comparison of the Growth Method andthe Seed ApproachLutz Kirste1, Thu Nhi Tran Caliste2, Tomasz Sochacki3, Robert Kucharski3, Karolina Grabianska3, Jan L.
Weyher3, Magdalena A. Zajac3,4, Malgorzata Iwinska3, JoséBaruchel2, Michal Bockowski3
1
Fraunhofer Institute for Applied Solid State Physics (IAF), Germany, 2 European Synchrotron Radiation
Facility (ESRF), France, 3 Institute of High Pressure Physics (UNIPRESS), Poland, 4 Military Universityof Technology, Poland

CH10: InGaN Optical III
Argos F

November 16 (Thu) 8:30 -10:20

Chair : Guillaume Cassabois, Ryuji Katayama

CH10-1 （Invited）

8:30 - 8:55

Physics of disorder and carrier localization in nitride alloys
Claude Weisbuch1,2, Tsung-Yin Tsai1,3, Kai Shek Qwah1, Jean-Philippe Banon2, Yuh-Renn Wu3, Mylène
Sauty2, Yi Chao Chow1, Jacques Peretti2, Aurélien David4, James S. Speck1
1
UCSB, United States of America, 2 CNRS, France, 3 National Taiwan Univ., Taiwan, 4 Google, UnitedStates of America

CH10-2 （Oral）

8:55 - 9:10

Investigation of non-radiative recombination channels in InGaN/GaN quantum
wells with high dislocation densities
Pierre Lottigier1, Davide Maria Di Paola1, Duncan Alexander1, Thomas Fjord Kjaersgaard Weatherley1,
Pablo Sáenz de Santa María Modroño2, Danxuan Chen1, Gwénolé Jacopin2, Jean-François Carlin1, Raphaël
Butté1, Nicolas Grandjean1
1
LASPE - EPFL, Switzerland, 2 Institut Néel - CNRS, France

CH10-3 （Oral）

9:10 - 9:25

Modelling nonradiative recombination at individual point defects in an InGaN/GaN
quantum well
Thomas Weatherley1, Gunnar Kusch2, Duncan T. L. Alexander1, Rachel A. Oliver2, Jean-François Carlin1,
Raphaël Butté1, Nicolas Grandjean1
1Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland, 2 University of Cambridge, UK

CH10-4 （Oral）

9:25 - 9:40

How many dislocations are too many for InGaN alloys?
Zydrunas Podlipskas1, Kazimieras Nomeika1, Ramunas Aleksiejunas1
1
Vilnius University, Institute of Photonics and Nanotechnology, Lithuania

CH10-5 （Oral）

9:40 - 9:55

Polarized luminescence from c-plane InGaN/GaN quantum wells induced byanisotropic strain originated from stripe-shaped GaN-on-Si structure via epitaxial
lateral overgrowth
Yoshinobu Kawaguchi1, Kazuma Takeuchi1, Kentaro Murakawa1, Motohisa Usagawa1, Akiko Komoda1,
Mizuki Tonomura1, Takeshi Yokoyama1, Yuuta Aoki1, Hiroyuki Ogura1, Takeshi Kamikawa1, Shuhei
Ichikawa2, Kazunobu Kojima2
1
Kyocera Corporation, Japan, 2 Osaka University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH10-6 （Invited）

9:55 - 10:20

Defect-assisted nonradiative recombination in nitrides
Chris G. Van de Walle1
1
University of California, Santa Barbara, United States of America

OD10: Novel Optical Devices
Navis A

November 16 (Thu) 8:30 -10:25

Chair : Jong Kyu Kim, Atsushi Nishikawa

OD10-1 （Invited）

8:30 - 8:55

Observation of Suspended AA-Stacked Hexagonal Boron Nitride Grown on GaN
Substrate by Metal-Organic Chemical Vapor Deposition
Jong Kyu Kim1, Seokho Moon1, Adrien Rousseau2, Youngjae Kim3, Yunjae Park4, Wilfrid Desrat2, Jiye
Kim1, Pierre Valvin2, Giorgia Fugallo5, Feng Ding4, Jaedong Lee3, Bernard Gil2, Guillaume Cassabois2, SiYoung Choi1
1
Pohang University of Science and Technology, Korea, 2 Universite de Montpellier, France, 3 Daegu
Gyeongbuk Institute of Science and Technology, Korea, 4 Institute for Basic Sciecne, Korea, 5 Universite deNantes, France

OD10-2 （Oral）

8:55 - 9:10

Telecom single-photon emitters in GaN: operation at room temperature andcoupling to photonic structures
Max Meunier1,2, John J. H. Eng3,4,1, Haoran Zhang3, Sebastien Chenot2, Virginie Brandli2, Febiana
Tjiptoharsono4, Zhaogang Dong4, Weibo Gao1,3,5, Jesus Zuniga-Perez1,31Majulab, IRL 3654, CNRS, NTU, Université Côte d’Azûr, Sorbonne Université, NUS, Singapore, 2 CRHEA,
UCA, CNRS, Rue Bernard Gregory, 06560 Valbonne, France, France, 3 Division of Physics and Applied
Physics, School of Physical and Mathematical Sciences, NTU, 21 Nanyang Link 637371, Singapore,
Singapore, 4 ASTAR, (Agency for Science, Technology and Research), Institute of Materials Research andEngineering, 2 Fusionopolis Way 138634, North Tower, Singapore, Singapore, 5 Center forQuantum
Technologies, National University of Singapore, Singapore 117543, Singapore, Singapore

OD10-3 （Oral）

9:10 - 9:25

Ambient Visible Quantum Light Source in Aluminum Nitride
Sam Bishop1, Joseph Cannon1, Huseyin Yacgi1, John Hadden1, Anthony Bennett1
1
Cardiff University, UK

OD10-4 （Oral）

9:25 - 9:40

Future optics with high-aspect ratio GaN nano-resonators
Yan Liang Liu1, Wen Sheng Peng1, Meng Hsin Chen1, Ting Yu Wu1, VIN CENT SU1
1
Department of Electrical Engineering, National United University, Taiwan

OD10-5 （Oral）

9:40 - 9:55

Enhancing the emission in V-B in hBN for practical quantum sensing
Honbing Cai2,3, Xyaodan Lyu3, Shihao Ru3, Z. Jiang3, John J. H. Eng1,3, Ruihua He4, Y. Miao3, Qinghai
Tan3, L. Wu3, Chuseng Zhang3, Zhaowei Zhang3, Zhao Mu3, Weibo Gao1,2,3, Jesus Zuniga-Perez1,31Majulab, IRL 3654, CNRS, NTU, UCA, SU, NUS, Singapore, Singapore, 2 The Photonics Institute andCentre for Disruptive Photonic Technologies, NTU, Singapore 637371, Singaore, Singapore, 3 Division of
Physics and Applied Physics, School of Physical and Mathematical Sciences, NTU, 21 Nanyang Link
637371, Singapore, Singapore, 4 School of Biological Sciences, NTU, Singapore 637551, Singapore,
Singapore

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD10-6 （Oral）

9:55 - 10:10

Progress of electrically injected GaN-on-Si microdisk lasers
Meixin FENG1, Jianxun LIU1, Qian SUN1, Hui YANG1
1
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China

OD10-7 （Oral）

10:10 - 10:25

Development of MicroLED neural device for effective optogenetic stimulation
Hiroki Yasunaga1, Atsushi Nishikawa2, Alexander Loesing2, Mikiko Ishikawa3, Chikako Kamiyoshihara3,
Susumu Setogawa4, Noriaki Ohkawa3, Hiroto Sekiguchi1
1
Toyohashi University of Technology, Japan, 2 ALLOS Semiconductors GmbH, Germany, 3 Dokkyo Medical
University, Japan, 4 Osaka City University, Japan

GR13: Sc-containing III-Nitrides
Navis B

November 16 (Thu) 8:30 -10:25

Chair : Atsushi Kobayashi, Zetian Mi

GR13-1 （Invited）

8:30 - 8:55

Ferroelectric Nitride Semiconductors: Epitaxy, Properties, and Emerging Device
Applications
Zetian Mi1, Ding Wang1, Ping Wang1, Danhao Wang1, Shubham Mondal1, Mingtao Hu1, Samuel Yang1
1
University of Michigan, United States of America

GR13-2 （Oral）

8:55 - 9:10

Structural Properties of Epitaxial ScAlN Films Grown by Sputtering: Experimental
and Machine Learning Approaches
Atsushi Kobayashi1, Yoshio Honda2, Takuya Maeda3, Kohei Ueno4, Hiroshi Fujioka4
1
Tokyo University of Science, Japan, 2 Nagoya University, Japan, 3 The University of Tokyo, Japan, 4 The
University of Tokyo, Japan

GR13-3 （Oral）

9:10 - 9:25

Epitaxial growth of Aluminium Yttrium Nitride
Stefano Leone1, Isabel Streicher1, Franziska C. Beyer2, Jan Beyer3, Kuei-Shen Hsu3, Mario Prescher1,
Christian Röder2,3, Patrik Straňák1, Lutz Kirste1
1
Fraunhofer IAF, Germany, 2 Fraunhofer IISB, Germany, 3 TU Bergakad. Freiberg, Germany

GR13-4 （Oral）

9:25 - 9:40

Pushing the Limits of Low-Temperature Growth of High-Quality ScAlN Via MetalRich Epitaxy
Emily N. Marshall1, Zachary Engel1, Keisuke Motoki1, Christopher M. Matthews1, Sangho Lee1, Amanda
L. Tang1, W. Alan Doolittle1
1
Georgia Institute of Technology, United States of America

GR13-5 （Oral）

9:40 - 9:55

Giant apparent polarization in ferroelectric AlScN
Georg Schönweger1,2, Niklas Wolff1,3, Adrian Petraru1, Hermann Kohlstedt1,3, Lorenz Kienle1,3, Simon
Fichtner1,2
1Kiel University, Germany, 2 Fraunhofer Institute for Silicon Technology, Germany, 3 Kiel Nano, Surface
and Interface Science (KiNSIS), Germany

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR13-6 （Oral）

9:55 - 10:10

Charged Polarization Domain Walls in Ferroelectric Wurtzite-Type AlN-ScN Solid
SolutionsGeorg Schönweger1,2, Niklas Wolff1, Adrian Petraru1, Hermann Kohlstedt1, Lorenz Kienle1, Simon
Fichtner1,2
1Kiel University, Germany, 2 Fraunhofer Institut for Silicon Technology, Germany

GR13-7 （Oral）

10:10 - 10:25

Charge/Lattice Ordering in Ferroelectric ScAlN/GaN Heterostructures
Ping Wang1, Haotian Ye1, Jinlin Wang1, Rui Wang1, Tao Wang1, Bo Shen1, Xinqiang Wang1
1
Peking University, China

ED10: Thermal Management
Navis C

November 16 (Thu) 8:30 -10:35

Chair : Manato Deki, Tomas Palacios

ED10-1 （Invited）

8:30 - 8:55

GaN-on-Diamond Transistors: Challenges and Opportunities
Martin Kuball1
1
University of Bristol, UK

ED10-2 （Oral）

8:55 - 9:10

Diamond Integration into RF N-Polar GaN HEMTs Fabrication Process
Mohamadali Malakoutian1, Rohith Soman1, Jeong-kyu Kim1, Kelly Woo1, Anna Kasperovich1, Ashley
Soojin Jun1, Srabanti Chowdhury1
1
Stanford University, United States of America

ED10-3 （Oral）

9:10 - 9:25

Fabrication of nitride/3C-SiC/polycrystalline diamond heterostructures for efficient
thermal management of power devices
Chiharu Moriyama1, Keisuke Kawamura2, Sumito Ouchi2, Hiroki Uratani2, Yutaka Ohno3, Koji Inoue3,
Yasuyoshi Nagai3, Naoteru Shigekawa1, Jianbo Liang1
1
Osaka Metropolitan University, Japan, 2 Air Water Inc. , Japan, 3 Tohoku University, Japan

ED10-4 （Oral）

9:25 - 9:40

Composite Single/Poly Crystalline AlN Passivation Grown by PEALD for Topside
Heat Spreading in GaN-based Power Devices
Guanjun Jing1,2, Xinhua Wang1,2, Kexin Deng1,2, Fangyuan Sun3, Sen Huang1,2, Haibo Yin1, Qimeng Jiang1,2,
Ke Wei1,2, Xinyu Liu1,2
1
Institute of Microelectronics, Chinese Academy of Sciences, China, 2 University of Chinese Academy of
Sciences, China, 3 University of Science and Technology Beijing, China

ED10-5 （Oral）

9:40 - 9:55

Embedded liquid cooling for efficient integrated power ICs
Remco Van Erp1, Nirmana Perera1, Luca Nela1, Ibrahim Osama Elhagali1, Elison Matioli1
1EPFL, Switzerland

ED10-6 （Oral）

9:55 - 10:10

Electrothermal Measurements for Co-designed III-Nitride Transistors
MD TANVIR HASAN1, Abdullah Al Mamun Mazumder1, Didarul Alam1, Richard Floyd1, Abdullah
Mamun1, Kamal Hussain1, Grigory Simin1, Asif Khan1, MVS Chandrashekhar1
1
University of South Carolina, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED10-7 （Invited）

10:10 - 10:35

III-Nitride Electronics for Extreme Environment Operation
John Niroula1, Mengyang Yuan1, Qingyun Xie1, Tomas Palacios1
1
Massachusetts Institute of Technology, United States of America

Break

10:25 -10:55

ED11: RF IV
Argos D

November 16 (Thu) 10:55 -12:20

Chair : Sravanti Chowdhury, Atsushi Yamada

ED11-1 （Invited）

10:55 - 11:20

Scaling Challenges in Millimeter-Wave GaN HEMTs for High-Power, HighEfficiency, and High-Linearity Operation
Keisuke Shinohara1, Dean Regan1, Casey King1, Eric Regan1, Petra Rowell1, Andrea Arias1, Joshua
Bergman1, Miguel Urteaga1, Berinder Brar1, Nicholas Miller2
1
Teledyne Scientific and Imaging, United States of America, 2 Air Force Research Laboratory, United Statesof America

ED11-2 （Oral）

11:20 - 11:35

Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping
effects and superior blocking voltage for RF applications
Elodie Carneiro1,2, Stéphanie Rennesson2, Sebastian Tamariz2,3, Lyes Ben Hammou1, Kathia Harrouche1,
Etienne Okada1, Fabrice Semond3,2, Farid Medjdoub1
1
IEMN, France, 2 EasyGaN, France, 3 CRHEA, France

ED11-3 （Oral）

11:35 - 11:50

High RF Performance GaN HEMTs for X-band Application Fabricated by Si-rich
SiN/Si3N4 Bilayer Passivation Technology
Shiming Li1, Mei Wu1, Ling Yang1, Qingyuan Chang1, Bin Hou1, Meng Zhang1, Xiaohua Ma1, Yue Hao1
1
XIDIAN UNIVERSITY, China

ED11-4 （Oral）

11:50 - 12:05

RF Performances of E-mode p-GaN Gate HEMT on 200mm-Si Substrates for Sub6GHz Applications
Yan Cheng1, Zheyang Zheng1, Yat Hon Ng1, Kevin J. Chen1
1
The Hong Kong University of Science and Technology, Hong Kong

ED11-5 （Oral）

12:05 - 12:20

Microwave Power Performance of AlGaN/GaN HEMT on Semi-insulating Mndoped GaN Substrate
Tomoharu Sugino1, Kenji Osaki1, Kentaro Nonaka2, Tomohiko Sugiyama2, Yoshitaka Kuraoka2, Akio
Wakejima1
1
Ngoya Institute of Technology, Japan, 2 NGK Insulators, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR14: Nanostructures and New Growth Techniques
Argos E

November 16 (Thu) 10:55 -12:20

Chair : Detlef Hommel, Kazuyuki Tadatomo

GR14-1 （Invited）

10:55 - 11:20

Growth and transfer of quantum dots UV heterostructure emitting at 280nm using
van der Waals epitaxy on hBN
Julien Brault1, Aly Zaiter1, Antoine Reserbat-Plantey1, Nikita Nikitskiy1, Maud Nemoz1, Mohamed Al
Khalfioui1, Sébastien Chenot1, Philippe Vennéguès1, Phuong Vuong2, Vishnu Ottapilakkal2, Suresh
Sundaram2, Guillaume Cassabois3, Bernard Gil3, Abdallah Ougazzaden2,4
1
Côte d'Azur University - CRHEA - CNRS, France, 2 IRL 2958 Georgia Tech – CNRS, Georgia Tech Europe,
France, 3 Laboratoire Charles Coulomb and Université Montpellier 2, France, 4 School Electrical &Computer Engineering, Georgia Institute of Technology, France

GR14-2 （Oral）

11:20 - 11:35

Nanoscopic (In,Ga)N light emitters in ultra-thin GaN nanowires
Thomas Auzelle1, Farshad Doustipour1, Maximilian Pudelski1, Mikel Gómez Ruiz1, Jonas Lähnemann1,
Oliver Brandt1, Lutz Geelhaar1
1Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin e.V., Germany

GR14-3 （Oral）

11:35 - 11:50

Dodecagonal III-nitride microrods – a basis for future UV deviceŁukasz Janicki1, Paulina Ciechanowicz1, Dominika Majchrzak1,2, Sandeep Gorantla1, Robert Kudrawiec1,3,
Detlef Hommel1,21Łukasiewicz Research Network - PORT Polish Center for Technology Development, Poland, 2 Institute of
Low Temperature and Structure Research, Polish Academy of Sciences, Poland, 3 Department of
Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław
University of Science and Technology, Poland

GR14-4 （Oral）

11:50 - 12:05

Strain Relaxation Effects on Overgrowth Crystal Quality and Emission Behavior
Caused by Subsurface GaN Porous Structures
Shaobo Yang1, Hao-Yu Hsieh1, Ping-Wei Liou1, Wei-Cheng Chen1, Li-Ping Liang1, Yu-Sheng Lin1, HsuanYu Liu1, C. C. (Chih-Chung) Yang1
1
National Taiwan University, Taiwan

GR14-5 （Oral）

12:05 - 12:20

Scaling up IBAD Template for Very-Large-Scale GaN Epitaxy
Vladimir Matias1, Chris Sheehan11iBeam Materials, United States of America

CH11: AlGaN II
Argos F

November 16 (Thu) 10:55 -12:20

Chair : Momoko Deura, Emmanouil Kioupakis

CH11-1 （Invited）

10:55 - 11:20

Recent progress on the epitaxial growth, doping of AlGaN with high Al fraction andthe fabrication of Deep UV LEDs
Bo Shen1, F. J. Xu1
1Peking Univ., China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH11-2 （Oral）

11:20 - 11:35

P-GaN interfacial degradation as the dominant failure mode in UVC light-emitting
diode on high-quality AlN template
Chia-Yen Huang1, Wen-Hsuan Hsieh1, Chang-Hsieh Wu1, Tien-Chang Lu1
1
National Yangming Chiaotung University, Taiwan

CH11-3 （Oral）

11:35 - 11:50

Theoretical study on carrier transport and recombination processes in deep UV(Al,Ga)N light emitters
Robert Finn1, Michael O'Donovan2, Patricio Farrell2, Timo Streckenbach2, Julien Moatti3, Thomas
Koprucki2, Stefan Schulz1,41
Tyndall National Institute, University College Cork, Cork, T12 R5CP, , Ireland, 2 Weierstrass Institute(WIAS), Mohrenstr. 39, 10117 Berlin, , Germany, 3 Inria, Univ. de Lille, CNRS, UMR 8524 - Laboratoire
Paul Painleve, F-59000 Lille,, France, 4 School of Physics, University College Cork, Cork, T12 YN60,,
Ireland

CH11-4 （Oral）

11:50 - 12:05

Electrical properties of V-based Ohmic contacts on n-type AlGaN with high Al
content
Kazuaki Ebata1, Masanobu Hiroki1, Kouta Tateno1, Kazuhide Kumakura1, Yoshitaka Taniyasu1
1
NTT Basic Research Laboratories, Japan

CH11-5 （Oral）

12:05 - 12:20

Three-dimensional tomographic analysis of AlGaN-based UV-B wavelength laser
diodes
Shota Taniguchi1, Yusuke Hayashi1, Tetsuya Tohei1, Kazushi Sumitani2, Yasuhiko Imai2, Shigeru Kimura2,
Motoaki Iwaya3, Hideto Miyake4, Akira Sakai1
1Graduate School of Engineering Science, Osaka University, Japan, 2 Japan Synchrotron Radiation
Research Institute (JASRI), Japan, 3 Department of Materials Science and Engineering, Meijo University,
Japan, 4 Graduate School of Engineering, Mie University, Japan

OD11: Micro LEDs: Novel Structures
Navis A

November 16 (Thu) 10:55 -12:20

Chair : Theeradetch Detchprohm, Koh Matsumoto

OD11-1 （Invited）

10:55 - 11:20

Introduction to High-Speed Visible Light Communication Using Yellow-Green and
Red Micro-LEDs
Tzu-Yi Lee1, Wen-Chien Miao2,3, Fu-He Hsiao2,3, Yi-Hong Bai1, Yi-Hua Pai1, Chien-Chung Lin4, HaoChung Kuo1,2
1
Department of Photonics, National Yang Ming Chiao Tung University, Taiwan, 2 Hon Hai ResearchInstitut, Taiwan, 3 Department of Electrophysics, National Yang Ming Chiao Tung University, Taiwan, 4Department of Electrical Engineering, National Taiwan University, Taiwan

OD11-2 （Oral）

11:20 - 11:35

High-efficiency Color Conversion for Micro-LED Display Application Based on
Nanoscale-cavity effect and Förster Resonance Energy Transfer
Shaobo Yang1, Chen-Hua Chen1, Yi-Chen Lai1, Sheng-Yang Kuo1, His-Yu Feng1, Zong-Han Li1, ShungHsiang Wu1, Yueh-Chi Lee1, Yu-Sheng Lin1, Hsuan-Yu Liu1, Yang Kuo1, C. C. (Chih-Chung) Yang1
1
National Taiwan University, Taiwan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD11-3 （Oral）

11:35 - 11:50

Dualtronics: Expanding the functionality of polar substrates
Len van Deurzen1, Eungkyun Kim1, Henryk Turski2, Zexuan Zhang1, Anna Feduniewicz-Zmuda2, Mikolaj
Chlipala2, Marcin Siekacz2, Huili Grace Xing2,1, Debdeep Jena1
1
Cornell University, United States of America, 2 UNIPRESS, Poland

OD11-4 （Oral）

11:50 - 12:05

Flexible MicroLED array film adhering to the brain surface for in vivo optogenetic
stimulation
Ryota Kanda1, Taiki Kitde1, Atsushi Nishikawa2, Alexander Loesing2, Masaki Sirai3, Hiroki Kobayashi3,
Izumi Fukunaga4, Takuya Hikima5, Noriaki Ohkawa5,Hiroto Sekiguchi1
1
Toyohashi University of Technology, Japan, 2 ALLOS Semiconductors, Germany, 3 ULVAC, Japan, 4Okinawa Institute of Science and Technology, Japan, 5 Dokkyo Medical University, Japan

OD11-5 （Oral）

12:05 - 12:20

Flexible and transparent micro-LED array for multifunctional applications
Runze Lin1, Xinyi Shan1, Daqi Shen1, Xugao Cui1, Pengfei Tian1
1
Fudan University, China

CH12: BN
Navis B

November 16 (Thu) 10:55 -12:20

Chair : Takashi Taniguchi, Christian Wetzel

CH12-1 （Invited）

10:55 - 11:20

Polytypism in hexagonal boron nitride: an optical study
Guillaume Cassabois1
1
Montpellier University, France

CH12-2 （Oral）

11:20 - 11:35

Impact of alloy disorder on the electronic and optical properties of boron containing
III-N alloys
Cara-Lena Nies1, Stefan Schulz1,2
1
Tyndall National Institute, University College Cork, Cork, Ireland, 2 School of Physics, University College
Cork, Cork, Ireland

CH12-3 （Oral）

11:35 - 11:50

Spatially resolved cathodoluminescence studies of graphitic BN segments formed inhexagonal BN epilayers grown on a (0001) sapphire by CVD
Shigefusa F Chichibu1, Naoki Umehara2, Kazuhiko Hara2, Kohei Shima1
1
Tohoku University, Japan, 2 Shizuoka University, Japan

CH12-4 （Oral）

11:50 - 12:05

hBN bubbles as a tool for deterministic activation of single-photon emission
Piotr Tatarczak1, Johannes Binder1, Katarzyna Ludwiczak1, Jakub Iwanski1, Tomasz Fąs1, Aleksandra
Krystyna Dąbrowska1, Mateusz Tokarczyk1, Jan Suffczynski1, Andrzej Wysmołek1
1Faculty of Physics, University of Warsaw, Poland

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH12-5 （Oral）

12:05 - 12:20

Deep-UV defect emitters in thin hBN
Markus R. Wagner1,2, Nils Bernhard2, Luca Choi2, Benjamin M. Janzen2, Felix Nippert2, Neha Aggarwal1,
Joao Marcelo J. Lopes1, Angus Gale3, Igor Aharonovich3, Milos Toth3
1
Paul Drude Institute for Solid State Electronics, Leibniz Institute Berlin, Germany, 2 Technische
Universität Berlin, Insitute of Solid State Physics, Berlin, Germany, 3 University of Technology Sydney,
Sydney, Australia

ED12: Device Process
Navis C

November 16 (Thu) 10:55 -12:25

Chair : Kevin Chen, Masakazu Kanechika

ED12-1 （Oral）

10:55 - 11:10

High Efficiency, High Mobility Ion Implanted Silicon Doped GaN for Scalable HighPower Vertical Devices
Alan G Jacobs1, Boris N Feigelson1, Jennifer K Hite1, Joseph A Spencer1,2, Yuhao Zhang2, Marko J Tadjer1,
Karl D Hobart1, Travis J Anderson1
1
U.S. Naval Research Laboratory, United States of America, 2 Virginia Tech, United States of America

ED12-2 （Oral）

11:10 - 11:25

High Temperature Si Ion Implantation for Ohmic Contact Technology in Ⅲ-Nitride
Heterostructures
Minsik Oh1, Qingyun Xie1, Pao-Chuan Shih1, Michel Khoury2, Archana Kumar2, Ryan Ley2, Benjamin D.
Briggs2, Tomás Palacios1
1
Microsystems Technology Laboratories, Massachusetts Institute of Technology, United States of America,
2
Applied Materials, Inc., United States of America

ED12-3 （Oral）

11:25 - 11:40

Impacts of subsequent nitrogen radical treatment on surface roughness andelectrical properties of n-type GaN films deposited by reactive sputtering
Shinji Yamada1, Kiho Tanaka1, Manabu Arai1, Tetsu Kachi1, Jun Suda1
1
Nagoya University, Japan

ED12-4 （Oral）

11:40 - 11:55

High Aspect Ratio Al-Rich AlGaN Etching Technology with Smooth Vertical
Sidewalls for FinFET Fabrication
Hridibrata Pal1, Qingyun Xie1, John Niroula1, Pao-Chuan Shih1, Andrew A Allerman2, Andrew M
Armstrong2, Brianna Klein2, Tomas Palacios1
1
Massachusetts Institute of Technology, United States of America, 2 Sandia National Laboratories, UnitedStates of America

ED12-5 （Oral）

11:55 - 12:10

Efficient Retrieval of Atomic Steps on GaN Surface by High Temperature Remote
Plasma Pretreatments
Kexin Deng1,2, Xinhua Wang1,2, Sen Huang1,2, Pengfei Li3, Qimeng Jiang1,2, Haibo Yin1, Jie Fan1, Ke Wei1,2,
Yingkui Zheng1, Jingyuan Shi1, Xinyu Liu1,2
1
Institute of Microelectronics, Chinese Academy of Sciences, China, 2 University of Chinese Academy of
Sciences of Sciences, China, 3 Institute of Solid State Physics, Chinese Academy of Sciences, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED12-6 （Oral）

P-GaN/AlGaN/GaN heterojunction
reactivation annealing process

12:10 - 12:25

field-effecttransistors

fabricatedby

Yeo-Reum Yang1, Jun-Hyeok Yim1, Dong-Guk Kim1, Hyeon-Ji Kim1, Ho-Young Cha1
1
Hongik University, Korea

Lunch

12:25 -14:25

ED13: New Materials and Structures II
Argos D

November 16 (Thu) 14:25 -16:20

Chair : Junji Kotani, Takuya Maeda

ED13-1 （Invited）

14:25 - 14:50

Correct modeling of polarization in wz-AlScN
Mohamed Yassine1, Ali Yassine1, Elisa Wade1, Akash Nair2, Lutz Kirste2, Oliver Ambacher1
1Institute for Sustainable Systems Engineering, University of Freiburg, Germany, 2 Fraunhofer Institutefor Applied Solid State Physics IAF, Germany

ED13-2 （Oral）

14:50 - 15:05

Record high electron mobility near pinch-off on N-polar GaN/AlN heterostructures
grown on on-axis N-polar GaN substrates by plasma assisted molecular beam
epitaxyoguz odabasi1, Sandra Diez2, Md Irfan Khan1, Kamruzzaman Khan3, Elaheh Ahmadi1
1
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor,
Michigan 48109, United States of America, 2 Applied Physics Program, University of Michigan, Ann Arbor,
Michigan 48109, United States of America, 3 Electrical and Computer Engineering Department, Universityof California at Santa Barbara, Santa Barbara, CA 93106, United States of America

ED13-3 （Oral）

15:05 - 15:20

First Demonstration of High-Frequency InAlN/GaN HEMT using GaN-onInsulator Technology via Wafer Bonding
Hanchao Li1, Hanlin Xie2, Yue Wang3, Lekina Yulia5, Kumud Ranjan4, Navab Singh2, Surasit Chung2,
Kenneth Eng Kian Lee3, Subramaniam Arulkumaran4, GeokIng Ng1,2,3
1School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 2 Instituteof Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore, 3 Low Energy
ElectronicSystems, Singapore-MIT Alliance for Research and Technology, Singapore, 4 Temasek
Laboratories@NTU, Nanyang Technological University, Singapore, 5 School of Physical and Mathematical
Sciences, Nanyang Technological University,Singapore, Singapore

ED13-4 （Oral）

15:20 - 15:35

Polarization-Graded HEMTs for Improved Johnson's Figure of Merit
Nivedhita Venkatesan1, Wesley Turner1, Jeong-sun Moon2, Patrick Fay1
1
University of Notre Dame, United States of America, 2 HRL Laboratories LLC, United States of America

ED13-5 （Oral）

15:35 - 15:50

First Demonstration of AlBN/GaN High Electron Mobility Transistors
Kazuki Nomoto1, Chandrashekhar Prakash Savant1, Thai-Son Tran Nguyen1, Huili Grace Xing1, Debdeep
Jena1
1
Cornell University, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED13-6 （Oral）

15:50 - 16:05

AlN-based polarization doped FETs with graded AlxGa1-xN channel layer
Masanobu Hiroki1, Kazuhide Kumakura1, Yoshitaka Taniyasu1
1
NTT Basic Research Laboratories, Japan

ED13-7 （Oral）

16:05 - 16:20

Progress Toward N type and P type AlN Channel MESFETs
Sangho Lee1, Habib Ahmad1, Chris Matthews1, Emily Marshall1, Keisuke Motoki1, Amanda Tang1, William
Alan Doolittle1
1
Georgia Intuition of Technology, United States of America

GR15: Bulk AlN
Argos E

November 16 (Thu) 14:25 -16:20

Chair : Elke Meissner, Hiroyuki Fukuyama

GR15-1 （Invited）

14:25 - 14:50

The development of pseudomorphic AlGaN on native AlN substrates for UVC and
far UVC device applications
Leo John Schowalter1,2,3,4
1
Lit Thinking, Orlando, FL, United States of America, 2 University of Central Florida, United States ofAmerica, 3 Cornell University, United States of America, 4 Nagoya University, United States of America

GR15-3 （Oral）

15:05 - 15:20

Industrial Growth of AlN Single-Crystals
James Grandusky1, Robert T. Bondokov1, Justin Mark1, Kasey Hogan1, Griffin Q. Norbury1, Toru Kimura2,
Makoto Ikeda2, Masato Kobayashi2, Shingo Ishii2,Jun Yoshida2, Masato Toita2, Naohiro Kuze2
1
Crystal IS, United States of America, 2 Asahi Kasei Corporation, Japan

GR15-4 （Oral）

15:20 - 15:35

Growth and Structural Characterization of Bulk AlN Crystals with Efficient
Diameter Enlargement
Carsten Hartmann1, Carsten Richter1, Merve Kabukcuoglu2, Uta Juda1, Andrew Klump1, Lutz Kirste3,
Matthias Bickermann1, Daniel Hänschke2, Thomas Straubinger1
1
Leibniz-Institut für Kristallzüchtung, Berlin, Germany, 2 Institute for Photon Science and Synchrotron
Radiation (IPS), Karlsruhe Institute of Technology (KIT), Germany, 3 Fraunhofer Institute for Applied Solid
State Physics (IAF), Freiburg, Germany

GR15-5 （Oral）

15:35 - 15:50

Development towards 4” AlN substrates for the fabrication of AlN-based powerdevicesElke Meissner1,2, Besendörfer Sven1, Andreas Lesnik1, Gleb Lukin1, Roland Weingärtner1, Marc Hainke3,
Jochen Friedrich1
1
Fraunhofer Institute for Integrated Systems and Device Technology, Germany, 2 Chair for Electron
Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany, 3 Department of Industrial
Engineering and Healthcare, Technical University Amberg-Weiden , Germany

GR15-6 （Oral）

15:50 - 16:05

Mapping Analysis of Crystalline Perfection and UV-C Transparency of 2-Inch AlN
Substrates Grown by PVT
Rafael Dalmau1, Samuel Kirby1, Jeffrey Britt1, Raoul Schlesser1
1
HexaTech, Inc., United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR15-7 （Oral）

16:05 - 16:20

2-inch AlN Substrates with Absorption Coefficient below 15/cm at 220-240nm for
Far-UVC Optoelectronics
Liang WU1, Dan Lei1, Qikun Wang1, Xiaojuan Sun2,3, Dabing Li2,3
1
Ultratrend Technologies Co. Ltd., China, 2 Changchun Institute of Optics, Fine Mechanics and Physics,
Chinese Academy of Sciences (CAS), China, 3 Center of Materials Science and Optoelectronics Engineering,
University of Chinese Academy of Sciences, China

CH13: Quantum Electronics
Argos F

November 16 (Thu) 14:25 -16:15

Chair : Yoshihiro Ishitani, Claude Weisbuch

CH13-1 （Invited）

14:25 - 14:50

Nitride-Semiconductor-based Wavelength Converters
Ryuji Katayama1, Masahiro Uemukai1, Tomoyuki Tanikawa1
1
Osaka University, Japan

CH13-2 （Invited）

14:50 - 15:15

GaN Quantum Dots in Resonant Cavity Micropillars as deep UV Single Photon
SourcesJuergen Christen1, Hannes Schuermann1, Frank Bertram1, Gordon Schmidt1, Olga August1, ChristophBerger1, Armin Dadgar1, Andre Strittmatter1, Kong Gao2,Marc Holmes2, Yasuhiko Arakawa2
1
University of Magdeburg, Germany, 2 University of Tokyo, Japan

CH13-3 （Oral）

15:15 - 15:30

Significant emission enhancement from InGaN/GaN nanocolumn arrays owing tostrong coupling between photonic and plasmonic band states
Takao Oto1, Shotaro Hayakawa1, Koichi Okamoto2, Rie Togashi3,4, Katsumi Kishino4
1
Yamagata University, Japan, 2 Osaka Metropolitan University, Japan, 3 Sophia University, Japan, 4 Sophia
Nanotechnology Research Center, Japan

CH13-4 （Oral）

15:30 - 15:45

Optical and structural characterization of an AlInN/GaN-based longitudinal
photonic bandgap crystal laser structure
Gordon Schmidt1, Christoph Berger1, Peter Veit1, Jürgen Bläsing1, Frank Bertram1, Armin Dadgar1, André
Strittmatter1, Jürgen Christen1
1
Otto-von-Guericke-University Magdeburg, Germany

CH13-5 （Oral）

15:45 - 16:00

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Anthonin Delphan1, Maxim M. Makhonin1, Tommi Isionemi1, Paul M. Walker1, Maurice S. Skolnick1,
Dmitry N. Krizhanovskii1, Dmitry V. Skryabin2, Jean-François Carlin3, Nicolas Grandjean3, Raphaël Butté3
1
University of Sheffield, UK, 2 University of Bath, UK, 3 Ecole Polytechnique Fédérale de Lausanne,
Switzerland

CH13-6 （Oral）

16:00 - 16:15

Photoluminescence excitation spectroscopy of stimulated emission from AlGaNbased UV-C multiple quantum wells
Hideaki Murotani2,1, Kunio Himeno1, Hayate Ohkawara1, Kaichi Tani1, Satoshi Kurai1, Narihito Okada1,
Noritoshi Maeda3, Muhammad Ajmal Khan3, Masafumi Jo3, Hideki Hirayama3, Yoichi Yamada1
1
Yamaguchi University, Japan, 2 National Institute of Technology, Tokuyama College, Japan, 3 RIKEN,Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD12: Visible Lasers
Navis A

November 16 (Thu) 14:25 -16:20

Chair : Thierry Guillet, Masahiro Uemukai

OD12-1 （Invited）

14:25 - 14:50

Hybrid Photonic Integrated III-N Chip Lasers
Thomas Wunderer1
1
PARC, part of SRI International, United States of America

OD12-2 （Oral）

14:50 - 15:05

Greatly suppressed potential inhomogeneity and performance improvement of cplane InGaN green laser diodes
Ai Qin Tian1, Lei Hu1, Xuan Li1, Fang Zhi Li1, Wei Zhou1, Deyao Li, Masao Ikeda1, Hui Yang1, Jian Ping
Liu1
1
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China

OD12-3 （Oral）

15:05 - 15:20

Low-threshold, high-confinement blue and green edge emitting lasers based on
AlInN/GaN multilayer n-type cladding.
Marco Malinverni1, Marco Rossetti1, Antonino Castiglia1, Adin Ferhatovic1, Denis Martin1, Marcus Duelk1,
Christian Vélez1
1
EXALOS AG, Switzerland

OD12-4 （Oral）

15:20 - 15:35

Characterization of 430nm - InAlGaN laser diode with polarization doped pcladding layer
Muhammed AKTAS1, Anna KAFAR1,2, Łucja MARONA1,2, Szymon GRZANKA1,2, Szymon
STANCZYK1,2, Przemysław WISNIEWSKI1,2, Piotr PERLIN1,2
1
Institute of High Pressure Physics PAS, Poland, 2 TopGaN Ltd., Poland

OD12-5 （Oral）

15:35 - 15:50

From quantum confinement to bulk-like behavior: carrier-dependent transition inwide InGaN quantum wells
Lukas Uhlig1, Jannina Tepaß1, Mateusz Hajdel2, Grzegorz Muziol2, Ulrich Theodor Schwarz1
1
Chemnitz University of Technology, Germany, 2 Institute of High Pressure Physics, Polish Academy of
Sciences, Poland

OD12-6 （Oral）

15:50 - 16:05

Dynamics of tunnel junction laser diodes with wide quantum well
Jannina Tepaß1, Lukas Uhlig1, Mateusz Hajdel2, Grzegorz Muziol2, Ulrich Theodor Schwarz1
1
Chemnitz University of Technology, Germany, 2 Institute of High Pressure Physics, Polish Academy of
Sciences, Poland

OD12-7 （Oral）

Electrically-injected lasers based on thin film GaN platform
Wai Yuen Fu1, Yuk Fai Cheung1, Hoi Wai Choi1
1
The University of Hong Kong, Hong Kong

16:05 - 16:20

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR16: BN
Navis B

November 16 (Thu) 14:25 -16:20

Chair : Izabella Grzegory, Yoshitaka Taniyasu

GR16-1 （Invited）

14:25 - 14:50

Boron Nitride single crystals obtained under high pressure and their impurity
control.
Takashi Taniguchi1
1
National Institute for Materials Science, Japan

GR16-2 （Oral）

14:50 - 15:05

High nitrogen pressure growth of hexagonal BN using Ni-Cr solvent
Bohdan Sadovyi1, Petro Sadovyi1, Andrii Nikolenko2, Viktor Strelchuk2, Alexandra Ibanez3, Pierre Valvin3,
Guillaume Cassabois3, Bernard Gil3, Izabella Grzegory11Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2 V.E. Lashkaryov Institute of
Semiconductor Physics NAS of Ukraine, Ukraine, 3 Université de Montpellier Laboratoire Charles
Coulomb, France

GR16-3 （Oral）

15:05 - 15:20

On the solubility of boron nitride in supercritical ammonia-sodium solutions
Jacob Dooley1, Nathan Stoddard1, Kai Landskron1, Siddha Pimputkar1
1
Lehigh University, United States of America

GR16-4 （Oral）

15:20 - 15:35

Growth of BN on Sapphire Substrates Using Cu (111) Buffer Layers by MBE
Takashi Momiyama1, Kousuke Kimura1, Takashi Azuhata1, Hideki Nakazawa1, Masanobu Hiroki2,
Kazuhide Kumakura2, Yasuyuki Kobayashi1
1
Hirosaki University, Japan, 2 NTT Basic Research Lab., Japan

GR16-5 （Oral）

15:35 - 15:50

Structural and optical characterization of BxAlyGa1-x-yN/AlGaN MQWs forultraviolet emission
Thomas O'Connor1,2, Vitaly Z. Zubialevich1, Praveen Kumar3, Miryam Arredondo3, Stefan Schulz1,4, Peter
J. Parbrook1,2
1
Tyndall National Institute, University College Cork, Cork, Ireland, 2 School of Engineering, University
College Cork, Cork, Ireland, 3 School of Mathematics and Physics, Queens University Belfast, Belfast, UK,
4
Department of Physics, University College Cork, Cork, Ireland

GR16-6 （Oral）

15:50 - 16:05

Impact of aluminum alloying on hBN excitonic absorption properties
Jakub Iwański1, Mateusz Tokarczyk1, Aleksandra Krystyna Dąbrowska1, Jan Pawłowski1, Piotr Tatarczak1,
Johannes Binder1, Andrzej Wysmołek1
1Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland, Poland

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR16-7 （Oral）

16:05 - 16:20

MOVPE Growth of Hexagonal Boron Nitride on 150 mm sapphire substrates andIntegration of III-nitride Based LEDs on h-BN
Suresh Sundaram1,2,3, Phuong Vuong1,2, Vishnu Ottapilakkal2, Ashuthosh Srivastava3, Rajat Gujrati3, Andre
Perepeliuc3, Simon Gautier4, Tarik Moudakir 4, Paul L Voss1,3, Jean Paul Salvestrini1,2,3, Abdallah
Ougazzaden1,3
1
Georgia Tech Europe , France, 2 CNRS, IRL 2958 Georgia Tech - CNRS, France, 3 Georgia Institute ofTechnology, School of Electrical and Computer Engineering, Atlanta, United States of America, 4InstitutLafayette, , France

ED14: Reliability
Navis C

November 16 (Thu) 14:25 -16:20

Chair : Martin Kuball, Shinya Takashima

ED14-1 （Invited）

14:25 - 14:50

Process and Design Techniques for Reliability Enhancement of Lateral GaN HEMTs
Kevin J. Chen1
1
The Hong Kong University of Science and Technology, China

ED14-2 （Oral）

14:50 - 15:05

Physical Mechanism of Single Event Effects in E-mode GaN HEMTs Induced byPulsed Laser under Power Switching Conditions
Yang Tian Zhou1, Feng Zhou1, zong Wei Xu1, Fang Fang Ren1, Dong Zhou1, jun Dun Chen1, Rong Zhang1,
dou You Zheng1, Hai Lu1
1Nanjing University, China

ED14-3 （Oral）

15:05 - 15:20

Detail Analysis of defects on GaN-on-Si Epitaxial Wafers related to the High Voltage
GaN Power Devices
Yasuhiro Isobe1, Shintaro Ueda1, Hideki Sakurai1, Kazuki Kiyohara1, Akira Yoshioka1, Jumpei Tajima2,
Hajime Nago2, Toshiki Hikosaka2, Shinya Nunoue2
1
Toshiba Electronic Devices & Storage Corporation, Japan, 2 Corporate Research & Development Center,Toshiba Corporation, Japan

ED14-4 （Oral）

15:20 - 15:35

Hardening Against X-ray Irradiation for Normally-Off p-GaN HEMTs Using
Multiple Floating Field Plate Structures
Yu Rong1, Feng Zhou1, zong Wei Xu1, Fang Fang Ren1, Dong Zhou1, jun Dun Chen1, Rong Zhang1, dou
You Zheng1, Hai Lu1
1Nanjing University, China

ED14-5 （Oral）

15:35 - 15:50

Transconductance overshoot as a signature of trapping effects at backbarrierinterface of GaN HEMTs : dependence on device epitaxial structure
Zhan Gao1, Mirko Fornasier1, Francesco De Pieri1, Carlo De Santi1, Fabiana Rampazzo1, Matteo
Meneghini1, Gaudenzio Meneghesso1, Enrico Zanoni1
1
University of Padova, Italy

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED14-6 （Oral）

15:50 - 16:05

Analysis of trapping and detrapping mechanisms in 0.15 um-gate AlGaN/GaN HighElectron Mobility Transistors: explanation of dynamic behaviour of thresholdvoltage and on-resistanceFrancesco De Pieri1, Mirko Fornasier1, Fabiana Rampazzo1, Zhan Gao1, Carlo De Santi1, Matteo
Meneghini1, Gaudenzio Meneghesso1, Enrico Zanoni1
1
University of Padova, Italy

ED14-7 （Oral）

16:05 - 16:20

Impact of post-deposition anneal on threshold voltage instability due to bias stressin GaN planer MOSFETs with SiO2 gate dielectric
Yuki Ichikawa1, Katsunori Ueno2, Tsurugi Kondo2, Ryo Tanaka2, Shinya Takashima2, Jun Suda1
1
Nagoya University, Japan, 2 Fuji Electric, Japan

Poster Session III
Argos A-C

November 16 (Thu) 16:20 -18:10

Argos D-F

November 16 (Thu) 19:00 -21:00

Navis A-C

November 16 (Thu) 19:00 -21:00

BanquetStudent Event

The 14th International Conference on Nitride Semiconductors (ICNS-14)

November 17(Fri)

OD13: UV LEDs
Argos D

November 17 (Fri) 8:30 -10:10

Chair : Masafumi Jo, Tim Wernicke

OD13-1 （Invited）

8:30 - 8:55

Recent developments in high efficiency for deep UV LEDs
Yoshiki Saito1, Kengo Nagata1, Atsushi Miyazaki1, Shinya Boyama1, Koji Okuno1, Masaki Oya1, Keita
Kataoka2, Tetsuo Narita2, Kayo Horibuchi2, Maki Kushimoto3, Yoshio Honda3, Hiroshi Amano3, Hisanori
Ishiguro4, Tetsuya Takeuchi4, Kohei Shima5, Shigefusa F Chichibu5
1
Toyoda Gosei Co., LTD., Japan, 2 Toyota Central R&D labs., Inc., Japan, 3 Nagoya University, Japan, 4Meijo University, Japan, 5 Tohoku University, Japan

OD13-2 （Oral）

8:55 - 9:10

Demonstration of UV-C LEDs utilizing p-GaN/MgZnO:Ga hetero-tunnel junction
Tatsuhiro Tanaka1, Maki Kushimoto1, Yoshio Honda2,3,4, Hiroshi Amano2,3,4
1
Department of Electronics, Nagoya university, Japan, 2 Institute of Materials and Systems for
Sustainability, Nagoya university, Japan, 3 Deep Tech Serial Innovation Center, Nagoya university, Japan,
4
Institute for Advanced Research, Nagoya university, Japan

OD13-3 （Oral）

9:10 - 9:25

Short-term degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet
light emitting diodes on a sapphire substrate
Shigefusa F Chichibu1, Kengo Nagata2, Kouji Okuno2, Masaki Oya2, Yoshiki Saito2, Hisanori Ishiguro3,
Tetsuya Takeuchi3, Kohei Shima1
1
Tohoku University, Japan, 2 Toyoda Gosei Co. Ltd, Japan, 3 Meijo University, Japan

OD13-4 （Oral）

9:25 - 9:40

On the degradation mechanisms of state-of-the-art UV-C LEDs
Matteo Buffolo1, Francesco Piva1, Nicola Roccato1, Carlo De Santi1, Nicola Trivellin2,1, Marco Pilati1,
Norman Susilo3, Anton Muhin3, Luca Sulmoni3, Tim Wernicke3, Michael Kneissl3,4, Gaudenzio
Meneghesso1, Enrico Zanoni1, Matteo Meneghini1,51
University of Padova, Department of Information Engineering, Italy, 2 University of Padova, Department
of Industrial Engineering, Italy, 3 Technische Universität Berlin, Institute of Solid State Physics, Germany,
4
Ferdidnand-Braun-Institut (FBH), Germany, 5 University of Padova, Department of Physics andAstronomy, Italy

OD13-5 （Oral）

9:40 - 9:55

Degradation mechanism of GaN-based UV LEDs under electrical stress
Yingzhe Wang1, Xuefeng Zheng1, Xiaohua Ma1, Yue Hao1
1
Xidian University, China

OD13-6 （Oral）

9:55 - 10:10

Boron-containing UV LED emitting at 350 nm
Peter Milner1,2, Vitaly Z. Zubialevich1, Thomas O'Connor1,2, Brian Corbett1, Peter J. Parbrook1,2
1
Tyndall National Institute, Ireland, 2 Univerisity College Cork, Ireland

The 14th International Conference on Nitride Semiconductors (ICNS-14)

GR17: GaN III
Argos E

November 17 (Fri) 8:30 -10:10

Chair : Okhyun Nam, Tetsuo Narita

GR17-1 （Invited）

8:30 - 8:55

Progress in Electroemission Spectroscopy of GaN LEDs
Wan Ying Ho1, Yi Chao Chow1, Jacques Peretti2, Claude Weisbuch1,2, James S. Speck1
1
UCSB, United States of America, 2 Ecole Polytechnique, France

GR17-2 （Oral）

8:55 - 9:10

Selective-Area Metalorganic Vapor Phase Epitaxy of Semipolar (1-101) GaN Stripes
on Patterned Si Substrates for MicroLED Application
Naofumi Takeda1,2, Masahiro Uemukai1,2, Tomoyuki Tanikawa1,2, Ryuji Katayama1,2
1
Graduate School of Engineering Osaka University, Japan, 2 Spintronics Research Network Division,
Institute for Open and Transdisciplinary Research Initiatives, Osaka University, Japan

GR17-3 （Oral）

9:10 - 9:25

In-situ MOCVD Etching of GaN using XeF2 for Selective-Area-Epitaxial-Regrowthof p-type GaN for High Voltage PN Diodes
Andrew A. Allerman1, Andrew T. Binder1, Andrew M. Armstrong1, Jeff Steinfeldt1, Luke Yates1, Michael
L Smith1, Robert K. Kaplar1
1
Sandia National Laboratories, United States of America

GR17-4 （Oral）

9:25 - 9:40

Localized epitaxial growth of 402V BV quasi-vertical GaN-on-Si p-n diode on
200mm-diameter wafers
Thomas Kaltsounis1,2, David Arguello Plaza1, Hala El Rammouz1, Mohammed El Amrani1, Julien Buckley1,
Matthieu Lafossas1, Simona Torrengo1, Helge Haas1, LaurentMendizabal1, Alain Gueugnot1, Denis
Mariolle1, Yvon Cordier2, Matthew Charles1
1
CEA - Leti, France, 2 CNRS - CRHEA, France

GR17-5 （Oral）

9:40 - 9:55

Formation of 2-Dimensional Electron Gas in N-Polar GaN/AlN Grown by MOVPE
Aina Hiyama Zazuli1, Taketo Kowaki1, Minagi Miyamoto1, Koki Hanasaku1, Daisuke Inahara1, Kai Fujii1,
Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1
1
Grad. School of Sci. & Tech. for Innovation, Yamaguchi University, Japan

GR17-6 （Oral）

9:55 - 10:10

Revisiting Mg doping in GaN by plasma-assisted MBE: The relevance of thesubstrate temperature
Elçin Akar1, Bruno Da Silva2, Martien den Hertog2, Eva Monroy1
1
CEA Grenoble, France, 2 Institut Néel, France

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD14: Micro LEDs: Passivation
Argos F

November 17 (Fri) 8:30 -10:00

Chair : Bruno Daudin, Makoto Miyoshi

OD14-1 （Oral）

8:30 - 8:45

Red and blue InGaN µLEDs: Lessons learned for sidewall recombination
Jeong-Hwan Park1, Markus Pristovsek1, Dong-Seon Lee2, Tae-Yeon Seong3, Hiroshi Amano1
1
Nagoya University, Japan, 2 Gwangju Institute of Science and Technology, Korea, 3 Korea University,
Korea

OD14-2 （Oral）

8:45 - 9:00

Determining the effects of sidewall passivation on III-nitride µLEDs
Matthew Wong1, Stephen Gee1, Norleakvisoth Lim2, James Speck1, Shuji Nakamura1,3, Steve DenBaars1,3
1
Materials Department, UC Santa Barbara, United States of America, 2 Department of Chemical
Engineering, United States of America, 3 Department of Electrical and Computer Engineering, UnitedStates of America

OD14-3 （Oral）

9:00 - 9:15

Demonstration of 3.5 × 3.5 µm2 GaN blue micro-LEDs with negligible sidewall
surface nonradiative recombination
Xuelun Wang1, Xixi Zhao1, Tokio Takahashi1, Daisuke Ohori2, Seiji Samukawa2
1
National Institute of Advanced Industrial Science and Technology (AIST), Japan, 2 Tohoku University,
Japan

OD14-4 （Oral）

9:15 - 9:30

Flexible spectral control using chip-scale multi-wavelength InGaN LEDs
Yoshinobu Matsuda1, Mitsuru Funato1, Yoichi Kawakami1
1
Kyoto University, Japan

OD14-5 （Oral）

9:30 - 9:45

Atomic Layer Etching (ALE) of III-Nitrides
Wan Ying Ho1, Yi Chao Chow1, Zachary Biegler1, Kai Shek Qwah1, Tanay Tak1, Ashley Wissel-Garcia1,
Iris Liu1, Feng Wu1, Shuji Nakamura1, James S Speck1
1
University of California, Santa Barbara, United States of America

OD14-6 （Oral）

9:45 - 10:00

Impact of doped barriers on the recombination coefficients of c-plane InGaN lightemitting diodes
Yi Chao Chow1, Cheyenne Lynsky1, Shuji Nakamura1, Steven DenBaars1, Claude Weisbuch1,2, JamesSpeck1
1
University of California, Santa Barbara, United States of America, 2 Ecole Polytechnique, France

CH14: Nanostructures
Navis A

November 17 (Fri) 8:30 -10:10

Chair : Martin Feneberg, Shigetaka Tomiya

CH14-1 （Invited）

Insights into porous GaN from electron microscopy
Rachel Oliver1
1
University of Cambridge, UK

8:30 - 8:55

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH14-2 （Oral）

8:55 - 9:10

Morphological, structural and strain relaxation properties of porous InGaN-based
pseudo-substrate for long wavelength µ-LEDs
Yihong Ji1, Martin Frentrup1, Xiaotian Zhang1, Jakub Pongrácz1,2,3, Simon M. Fairclough1, Yingjun Liu4,
Tongtong Zhu4, Rachel A. Oliver1,4
1
University of Cambridge, UK, 2 Czech Academy of Science, Czech Republic, 3 Brno University ofTechnology, Czech Republic, 4 Poro Technologies Ltd, UK

CH14-3 （Oral）

9:10 - 9:25

Surface charge effects in GaN NWs: An advantage for enhancing the piezoelectric
conversion efficiency
Noelle GOGNEAU1, Pascal Chrétien2, Amaury Chevillard1, Tanbir Sodhi1,2, Laurent Couraud1, Laurent
Travers1, Jean-Christophe Harmand1, François H Julien1, Maria Tchernycheva1, Frédéric Houzé2
1
Center for Nanosciences and Nanotechnologies / CNRS / Paris-Saclay University, France, 2 Université
Paris-Saclay, CentraleSupélec, Sorbonne Université, CNRS, Laboratoire de Génie électrique etélectronique de Paris, France

CH14-4 （Oral）

9:25 - 9:40

Structural Analysis of a Single Ga1-xInxN/GaN Multi-quantum Shell by using an Xray Nano-beam from Synchrotron Radiation
Takao Miyajima1, Takato Ichikawa1, Nobuhiro Yasuda2, Ryota Kobayashi1, Shoya Ota1, Yasuhiko Imai2,
Kazushi Sumitani2, Shigeru Kimura2, Tomoyo Nakao3, Sakiko Enomoto3, Shigeo Arai3, Satoshi
Kamiyama1, Daichi Imai1
1
Meijo University, Japan, 2 Japan Synchrotron Radiation Research Institute, Japan, 3 Nagoya University,
Japan

CH14-5 （Oral）

9:40 - 9:55

High-Performance Machine Vision System by GaN n-i-n Nanowire
Haitao Du1, Xu Zhang2, Qifeng Lyu2, KeiMay Lau2, Xinbo Zou1
1
ShanghaiTech University, China, 2 Hong Kong University of Science and Technology, Hong Kong

CH14-6 （Oral）

9:55 - 10:10

Top-down Fabrication of Nitride Semiconductor Nanowires
Kouta Tateno1,2, Masato Takiguchi1,2, Kazuaki Ebata1, Satoshi Sasaki1, Kazuhide Kumakura1, Yoshitaka
Taniyasu1
1
NTT Basic Research Labs, Japan, 2 NTT Nanophotonics center, Japan

CH15: Defects and Phonon
Navis B

November 17 (Fri) 8:30 -10:10

Chair : Yong-Hoon Cho, Kazunobu Kojima

CH15-1 （Invited）

8:30 - 8:55

Atomic Scale Visualization Defect Induced Localized Vibration in III-Nitrides
Hailing Jiang1, Tao Wang1,2, Weikun Ge1, Ping Wang1, Bo Shen1, Lucas R Lindsay3, Xinqiang Wang1
1
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,
School of Physics, Peking University, China, 2 Electron Microscopy Laboratory, School of Physics, Peking
University, China, 3 Materials Science and Technology Division, Oak Ridge National Laboratory, UnitedStates of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH15-2 （Oral）

8:55 - 9:10

Longitudinal optical phonon dynamics analysis in GaInN/GaN heterostructures by
Raman spectroscopy
Thee Ei Khaing Shwe1, Tastuya Asaji1, Ryota Kimura1, Yuki Kikuchi1, Daisuke Iida2, Mohammed A.
Najmi2, Kazuhiro Ohkawa2, Yoshihiro Ishitani1
1
Chiba University, Japan, Japan, 2 King Abdullah University of Science and Technology (KAUST), Thuwal,
Saudi Arabia, Saudi Arabia

CH15-3 （Oral）

9:10 - 9:25

Influence of phonon process on two-dimensional exciton in quantum well analyzed
by phononic–excitonic–radiative model
Masaya Chizaki1, Yoshihiro Ishitani1
1
Chiba University, Japan

CH15-4 （Oral）

9:25 - 9:40

Theoretical calculation of MgGa-VO complexes in GaOx intermediate layer at
GaN/SiO2 interface
Shuto Hattori1, Atsushi Oshiyama2, Kenji Shiraishi1,2
1
Nagoya University, Japan, 2 IMaSS, Nagoya University , Japan

CH15-5 （Oral）

9:40 - 9:55

Evaluation of recombination centers originating from nitrogen-displacementrelated defects in homoepitaxial n-type and p-type GaN
Meguru Endo1, Masahiro Horita1, Jun Suda1
1
Nagoya University, Japan

CH15-6 （Oral）

9:55 - 10:10

Hall-effect Measurement of Homoepitaxial N-type GaN with Nitrogendisplacement-related Point Defects Formed by Electron Beam Irradiation
Chihiro Kojima1, Masahiro Horita1, Jun Suda1
1
Nagoya University, Japan

ED15: Novel Electron Devices
Navis C

November 17 (Fri) 8:30 -9:45

Chair : Yuji Ando, Taketomo Sato

ED15-1 （Oral）

8:30 - 8:45

Single-Crystalline AlN Thin-Film Piezoelectric Sensors Operating at 900 °C and in
Extreme Environments
Jae-Hyun Ryou1, Nam-In Kim1, Muhammad Aqib1, Miad Yarali1
1
University of Houston, United States of America

ED15-2 （Oral）

8:45 - 9:00

Interface Charge Management in Ferroelectric HEMTs
Brendan Hanrahan1, Daniel Drury2,1, Keisuke Yazawa3,2, Randy Tompkins1, Srabanti Chowdhury4, Geoff
Brennecka2
1
DEVCOM Army Research Laboratory, United States of America, 2 Colorado School of Mines, UnitedStates of America, 3 National Renewable Energy Laboratory, United States of America, 4 Stanford
University, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED15-3 （Oral）

9:00 - 9:15

Coherent Resonant Tunneling Transport and Negative Diferential Conductance in
GaN/AlN Multi-barrier Heterostructures
Jimy Encomendero1, Vladimir Protasenko1, Debdeep Jena1, Grace Xing1
1
School of Electrical and Computer Engineering, Cornell University, United States of America

ED15-4 （Oral）

9:15 - 9:30

High-Speed and High-Endurance GaN-based Charge Trapping Memory
Tao Chen1, Zheyang Zheng1, Sirui Feng1, Li Zhang1, Kevin Jing Chen1
1
The Hong Kong University of Science and Technology, Hong Kong

ED15-5 （Oral）

9:30 - 9:45

Advancing Neutron Detection: Fabrication, Characterization and Performance
Evaluation of Self-Powered PIN BGaN/GaN Superlattices Based Neutron Detectors
Ashutosh Srivastava1,2, Adama Mballo2, Suresh Sundaram1,2,3, Vishnu Ottapilakkal2, Phuong Vuong2,3,
Soufiane Karrakchou2, Mritunjay Kumar4, Xiaohang Li4, YacineHalfaya5, Simon Gautier5, Paul L Voss1,2,Jean Paul Salvestrini1,2,3, Abdallah Ougazzaden1,2
1
Georgia Institute of Technology, United States of America, 2 CNRS, France, 3 Georgia Institute ofTechnology, France, 4 King Abdullah University of Science and Technology, Saudi Arabia, 5 Institute
Lafayette, France

Break

10:10 -10:40

OD15: Micro LEDs: on Si
Argos D

November 17 (Fri) 10:40 -12:05

Chair : Yun-Li Li, Yasushi Nanishi

OD15-1 （Invited）

10:40 - 11:05

Performance of MicroLED Chip and Display for Emerging Applications
Ying-Tsang Liu1, Ching-Liang Lin1, Tzu-Yang Lin1, Yun-Li Li1
1
PlayNitride Inc., Taiwan

OD15-2 （Oral）

11:05 - 11:20

Study of the size-dependence of the performance of blue and green µLEDs madefrom LED structures grown on 200mm silicon wafers
Fabian ROL1, Patrick Le Maitre1, Anthony Cibié1, Séverine Poncet1, Valentin Chambinaud1, Simon
Litschgi1, Bastien Miralles1, Marion Volpert1, Clément Ballot1, Bernard Aventurier1, Matthew Charles1,
Paolo De Martino1, Julia Simon1
1
Université Grenoble Alpes, CEA-LETI, France

OD15-3 （Oral）

11:20 - 11:35

Flat bow of 300 mm GaN-on-Si LED epiwafers with thickness of 775 µm for
manufacturing of micro LEDs in Si fabs
Atsushi Nishikawa1, Alexander Loesing1, Burkhard Slischka1
1
ALLOS Semiconductors GmbH, Germany

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD15-4 （Oral）

11:35 - 11:50

Two Color microLED Photoluminescence Emission from 3.5 µm sub-pixels by
Successive Epitaxial Growth on 200 mm GaN on silicon
Matthew Charles1, Simona Torrengo1, Matthieu Lafossas1, Guillaume Veux1, Frederic Barbier1, Pierre
Ferret1, Fabian Rol1, Jean-Christophe Pillet1, Bernard Aventurier1, Marion Douma1, Florian Fedeli1, Patrick
Le Maitre1, Julia Simon1, François Levy1, Amélie Dussaigne1
1
CEA-LETI, France

OD15-5 （Oral）

11:50 - 12:05

Fabrication method of ultra-low dislocation density micro-LEDs using epitaxial
lateral overgrowth GaN layers on silicon (EGOS) substrate
Takeshi Kamikawa1, Toshihiro Kobayashi1, Yuuta Aoki1, Noboru Suda1, Hiroyuki Ogura1, Mitsunari Seida1,
Kazuma Takeuchi1, Kosuke Mishima1, Yuki Taniguchi1, Fumio Yamashita1, Akiko Komoda1, Moon
Sooyong1, Yuuichiro Hayashi1, Katsuaki Masaki
1
Research institute for advanced material and devices, Corporate R&D Group, Kyocera , Japan

GR18: AlN II
Argos E

November 17 (Fri) 10:40 -12:00

Chair : Yusuke Mori, Leo Schowalter

GR18-1 （Invited）

10:40 - 11:05

Unlocking the AlN technology one step at a time
Zlatko Sitar1
1
North Carolina State University, United States of America

GR18-2 （Oral）

11:05 - 11:20

Surface Oxide Removal on AlN Substrates via Low Temperature AluminumFlashing
Christopher M Matthews1, Habib Ahmad1, Zachary Engel1, Keisuke Motoki1, Sangho Lee1, Emily N
Marshall1, Anusha Krishnan1, W. Alan Doolittle1
1
Georgia Institute of Technology, United States of America

GR18-3 （Oral）

11:20 - 11:35

Effects of Interlayer Thickness on AlN Templates with Sapphire Substrates
Tomoaki Kachi1, Hayata Takahata1, Ryunosuke Oka1, Hisanori Ishiguro1, Tetsuya Takeuchi1, Satoshi
Kamiyama1, Motoaki Iwaya1, Yoshiki Saito2, Koji Okuno2
1
Meijo University, Japan, 2 TOYODA GOSEI Co.,Ltd., Japan

GR18-4 （Invited）

11:35 - 12:00

High-Speed Growth of Thick AlN Homoepitaxial Layers by HVPE for Mass
Production of High-Quality AlN Wafers
Yoshinao Kumagai1, Ken Goto1, Toru Nagashima2, Reo Yamamoto2, Michał Boćkowski3, Atsushi Yamada4
1
Tokyo University of Agriculture and Technology, Japan, 2 Tokuyama Corporation, Japan, 3 Polish
Academy of Sciences, Poland, 4 Fujitsu Limited, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

OD16: Waveguides and SHG
Argos F

November 17 (Fri) 10:40 -12:05

Chair : Takao Miyajima, Thomas Wunderer

OD16-1 （Invited）

10:40 - 11:05

GaN-based Waveguide polariton lasers: from quasi-CW to mode-locked lasers
Thierry Guillet1, Hassen Souissi1, Maksym Gromovyi2,3, Valentin Develay1, Christelle Brimont1, Laetitia
Doyennette1, Edmond Cambril2, Sophie Bouchoule2, BlandineAlloing3, Eric Frayssinet3, Jesus ZunigaPerez3, Guillaume Malpuech4, Dmitry Solnyshkov4,5
1
Laboratoire Charles Coulomb (L2C), Université de Montpellier, CNRS, France, 2 Centre de Nanosciences
et de technologies, CNRS, Université Paris-Saclay, France, 3 UCA, CRHEA-CNRS, Rue Bernard Gregory,
06560 Valbonne,France, 4 Université Clermont Auvergne, CNRS, Institut Pascal, Clermont-Ferrand,
France, 5 Institut Universitaire de France (IUF), 75231 Paris, France

OD16-2 （Oral）

11:05 - 11:20

Towards light combiners using InAlGaN waveguides
Anna Kafar1,2, Kiran Saba1, Adam Brejnak1, Krzysztof Gibasiewicz1, Jacek Kacperski1,2, Lucja Marona1,2,
Szymon Grzanka1,2, Piotr Perlin1,2
1
Institute of High Pressure Physics PAS, Poland, 2 TopGaN Ltd., Poland

OD16-3 （Oral）

11:20 - 11:35

Fabrication of AlN Polarity Inverted Transverse QPM Rib WaveGuide for Second
Harmonic Generation Fabricated by Patterned Wafer Bonding
Ryo Momosaki1,2, Hiroto Honda1,2, Yuya Furukawa1,2, Takehiro Asahi3, Yoshio Okayama4, Masahiro
Uemukai1,2, Tomoyuki Tanikawa1,2, Ryuji Katayama1,2
1
Graduate School of Engineering Osaka University, Japan, 2 Spintronics Research Network Division,
Institute for Open and Transdisciplinary Research Initiatives, Osaka University, Japan, 3 Panasonic
Production Engineering Co., Ltd., Japan, 4 Panasonic Holdings Corporation, Japan

OD16-4 （Oral）

11:35 - 11:50

Fabrication of transverse quasi-phase-matched channel waveguide using 4-layer
polarity inverted AlN structure for second harmonic generation
Eiki Sato1,2, Hiroto Honda1,2, Ryo Momosaki1,2, Tomohiro Tamano3, Kanako Shojiki3,4, Hideto Miyake3,
Masahiro Uemukai1,2, Tomoyuki Tanikawa1,2, Ryuji Katayama1,2
1
Graduate School of Engineering Osaka University, Japan, 2 Spintronics Research Network Division,
Institute for Open and Transdisciplinary Research Initiatives Osaka University, Japan, 3 Graduate Schoolof Engineering Mie University, Japan, 4 Graduate School of Engineering Kyoto University, Japan

OD16-5 （Oral）

11:50 - 12:05

Design of AlN/Ta2O5 Horizontally Stacked Transverse-QPM Channel Waveguide forSqueezed Light Generation
Hiroto Honda1,2, Masahiro Uemukai1,2, Tanikawa Tomoyuki1,2, Ryuji Katayama1,2
1
Graduate School of Engineering Osaka University, Japan, 2 OTRI-Spin, Osaka University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH16: Light Emitters
Navis A

November 17 (Fri) 10:40 -11:55

Chair : Ulrich Schwarz, Tomoyuki Tanikawa

CH16-1 （Oral）

10:40 - 10:55

Evidence of Lateral Injection at V-Defect Sidewalls in III-Nitride Light Emitting
Diodes Using Electron Emission Microscopy
Tanay Tak1, Cameron W. Johnson2, Wan Ying Ho1, Mylène Sauty3, Feng Wu1, Yuh-Renn Wu4, Andreas K.
Schmid2, Jacques Peretti3, Claude Weisbuch1,3, James S. Speck1
1
Materials Department, University of California, Santa Barbara, United States of America, 2 MolecularFoundry, Lawrence Berkeley National Laboratory, United States of America, 3 Laboratoire de Physique dela MatièreCondensée, Ecole Polytechnique, France, 4 Graduate Institute of Photonics and Optoelectronics
and Department of Electrical Engineering, National Taiwan University, Taiwan

CH16-2 （Oral）

Size-dependent sidewall defect effect of GaN
photoluminescence and fluorescence lifetime imaging

10:55 - 11:10

blue

micro-LEDs

byZhou Wang1, Xinyi Shan1, Shijie Zhu1, Xugao Cui1, Gengzhao Xu2, Zhenghui Liu2, Ke Xu2, Pengfei Tian1
1
Fudan University, China, 2 Suzhou Institute of Nano-Tech and Nano-Bionics, China

CH16-3 （Oral）

11:10 - 11:25

Efficiency Droop in Zincblende InGaN/GaN Quantum Wells
Daniel Dyer1, Stephen A Church1, Ruben Ahumada-Lazo1, Menno J Kappers2, Matthew P Halsall3, Patrick
Parkinson1, David J Wallis2,4, Rachel A Oliver2, David J Binks1
1
Department of Physics and Astronomy & Photon Science Institute, University of Manchester, Manchester,UK, 2 Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK, 3
Department of Electrical and Electronic Engineering & Photon Science Institute, University of Manchester,Manchester, UK, 4 Centre for High Frequency Engineering, Cardiff University, Cardiff, UK

CH16-4 （Oral）

11:25 - 11:40

Enhanced luminous efficiency of Eu,O-codoped GaN due to luminescent site
reconfiguration induced by high-temperature thermal annealing
Takenori Iwaya1, Shuhei Ichikawa1,2, Dolf Timmerman1, Jun Tatebayashi1, Yasufumi Fujiwara1
1
Osaka University, Japan, 2 Research Center for Ultra-High Voltage Electron Microscopy, Osaka
University, Japan

CH16-5 （Oral）

11:40 - 11:55

Ultra-high-pressure doping of gallium nitride with Europium
Piotr Jaroszynski1, Ewa Grzanka1, Mikolaj Grabowski1, Grzegorz Staszczak1, Rafal Jakiela2, Kacper
Sierakowski1, Igor Prozheev3, Filip Tuomisto3, Michal Bockowski1,41
Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2 Institute of Physics Polish
Academy of Sciences, Poland, 3 Department of Physics, University of Helsinki, Finland, 4 CIRFE,
IMaSS,Nagoya University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

CH17: GaN and AlN
Navis B

November 17 (Fri) 10:40 -12:10

Chair : Frank Bertram, Masatomo Sumiya

CH17-1 （Oral）

10:40 - 10:55

Polarity determination of multilayer polarity-inverted AlN using focused-ion-beam
oblique etching and KOH immersion
Yusuke Hayashi1, Tetsuya Tohei1, Kenjiro Uesugi2,3, Hideto Miyake4, Akira Sakai1
1Graduate School of Engineering Science, Osaka University, Japan, 2 Organization for Research Initiativeand Promotion, Mie University, Japan, 3 Graduate School of Regional Innovation Studies, Mie University,
Japan, 4 Graduate School of Engineering, Mie University, Japan

CH17-2 （Oral）

10:55 - 11:10

Polarity determination of crystal defects in zincblende GaN by aberration-corrected
electron microscopy
Huixin Xiu1,2, Simon M Fairclough1, Abhiram Gundimeda1, Menno J Kappers1, David J Wallis1,3, Rachel
A Oliver1, Martin Frentrup1
1
University of Cambridge, UK, 2 University of Shanghai for Science and Technology, China, 3 Universityof Cardiff, UK

CH17-3 （Oral）

11:10 - 11:25

Synchrotron-radiation X-ray topographic and X-ray reticulographic observation of
AlN single-crystal substrates
Yongzhao Yao1, Yoshiyuki Tsusaka2, Keiich Hirano3, Koji Sato1, Yoshihiro Sugawara1, Narihito Okada4,
Kazuyuki Tadatomo4, Yukari Ishikawa1
1
Japan Fine Ceramics Center, Japan, 2 University of Hyogo, Japan, 3 High Energy Accelerator Research
Organization, Japan, 4 Yamaguchi University, Japan

CH17-4 （Oral）

11:25 - 11:40

Guidelines for selecting appropriate dopants and concentrations for semi-insulating
GaN substrates
Daiki Tanaka1, Kenji Iso1,2, Jun Suda1
1
Nagoya University, Japan, 2 Mitsubishi Chemical Corporation, Japan

CH17-5 （Oral）

11:40 - 11:55

Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge
Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography
Lou Denaix1, Florian Castioni1, Jing Li1, Matthew Bryan1, David Cooper1, Eva Monroy2
1
Univ. Grenoble-Alpes,CEA,Leti, France, 2 Univ. Grenoble-Alpes, CEA, Grenoble INP, IRIG, PHeliqs,
FranceCH17-6 （Oral）

11:55 - 12:10

Effect of twist crystallinity of N-polar AlN underlayer on electrical properties of
GaN/AlN structure
Taketo Kowaki1, Koki Hanasaku1, Minagi Miyamoto1, Daisuke Inahara1, Aina hiyama Binti Zazuli1, Kai
Fuji1, Taisei kimoto1, Ryosuke Ninoki1, Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1
1
Grad.School of Sci.& Tech. for Inovation Yamaguchi Univ., Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ED16: Transport
Navis C

November 17 (Fri) 10:40 -11:55

Chair : Tetsuo Narita, Jun Suda

ED16-1 （Oral）

10:40 - 10:55

Signatures of mesoscopic transport in single Ge-doped GaN-nanowire field-effecttransistors
Hannes Hergert1, Mario F. Zscherp1, Philip Klement1, Jörg Schörmann1, Sangam Chatterjee1, Matthias T.
Elm1, Peter J. Klar1
1
Justus-Liebig-Universität Gießen, Germany

ED16-2 （Oral）

10:55 - 11:10

Weak antilocalization and spin-orbit coupling in 2DEG and 2DHG in GaN/AlN
heterostructures
Chuan Chang1, Yu-Hsin Chen1, Zexuan Zhang1, Debdeep Jena1, Huili (Grace) Xing1
1
Cornell University, United States of America

ED16-3 （Oral）

11:10 - 11:25

Transport properties of thin InN layers grown on Mg-doped InAlN buffers
Roman Stoklas1, Stanislav Hasenöhrl1, Edmund Dobročka1, Filip Gucmann1, Alica Rosová1, Dagmar
Gregušová1, Michal Blaho1, Michal Kučera1, Pierre Ruterana2, Marie Pierre Chauvat2, Slawomir Kret3,
Anna Kaleta3, Ján Kuzmík1
1
Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia, Slovakia, 2Centre de Recherche sur les Ions les Matériaux et la Photonique, UMR CNRS 6252, ENSICAEN, 6
Boulevard Juin, 14050, Caen France, France, 3 Institute of Physics, PAS, al. Lotnikow 32/46, 02-668
Warsaw, Poland, Poland

ED16-4 （Oral）

11:25 - 11:40

Pulsed Measurement of Hole Storage Induced Conductivity Enhancement in p-GaN
Gate Double Channel HEMT
Hang Liao1, Zheyang Zheng1, Ji Shu1, Kevin Chen1
1
The Hong Kong University of Science and Technology, China

ED16-5 （Oral）

11:40 - 11:55

High temperature stability of electron mobility in AlGaN channel heterostructureswith different Al fractions
Julien Bassaler1, Jash Mehta2, Leszek Konczewicz3,4, Sandrine Juillaguet3, Sylvie Contreras3, Maud
Nemoz5, Sebastian Tamariz5, Stéphanie Rennesson6, Fabrice Semond5, Yvon Cordier5, Julien Pernot1, Farid
Medjdoub2, Philippe Ferrandis1
1
Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France, 2 IEMN, CNRS,
Université de Lille, 59650 Villeneuve d'Ascq, France, 3 Laboratoire Charles Coulomb, UMR 221, Univ
Montpellier, CNRS, Montpellier, France, 4 Institute of High Pressure Physics, Polish Academy of Sciences,
Warsaw, 01-142, Poland, 5 Université Côte d'Azur, CNRS, CRHEA, rue Bernard Grégory, 06560 Valbonne,
France, 6 EasyGAN SAS, Rue Bernard Grégory, 06905 Sophia Antipolis, France

Lunch

12:10 -14:10

The 14th International Conference on Nitride Semiconductors (ICNS-14)

PL: Plenary
Argos D-F

November 17 (Fri) 14:10 -16:50

Chair : Hideki Hirayama, Ke Xu, Hideto Miyake, Yoshihiro Kangawa

PL-4 （Plenary）

14:10 - 14:50

Progress and future prospects of InGaN-based high-efficiency, high-power laser
diodesTakashi Mukai1
1
Nichia Corp., Japan

PL-5 （Plenary）

14:50 - 15:30

Vertical-cavity surface-emitting lasers at the end of the rainbow
Åsa Haglund1
1
Chalmers University of Technology, Sweden

PL-6 （Plenary）

15:30 - 16:10

Revisiting the physics of III-Nitrides LEDs: myths and facts
Aurélien David1
1
Google, United States of America

PL-7 （Plenary）

16:10 - 16:50

Recent Progress of GaN HEMT for Future Communication
Ken Nakata1
1
Sumitomo Electric Industries, Ltd, Japan

Closing
Argos D-F

November 17 (Fri) 16:50 -17:20

The 14th International Conference on Nitride Semiconductors (ICNS-14)

November 13(Mon)

Poster Session I
Argos A-C

November 13 (Mon) 15:45 -17:35

MoP-GR-1 （Poster）

Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion
Control for a Flexible Photosensitive Device
Yang Chen1, Zhiming Shi1, Shanli Zhang1, Jianwei Ben1, Ke Jiang1, Xiaojuan Sun1, Dabing Li1,2
1
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,
China

MoP-GR-2 （Poster）

Effect of post-growth annealing with trimethylgallium on structural quality of AlN
layers grown on c-plane sapphire substrate by MOVPE
Masataka Imura1, Hideki Inaba1, Takaaki Mano1, Yasuo Koide1
1
National Institute for Materials Science (NIMS), Japan

MoP-GR-3 （Poster）

Two-Step Growth and Crystal Quality Improvement of Zinc-blende AlN
Transformed from Wurtzite AlN on Si (111) by MOCVDChe Hao Liao1, Feras AlQatari2, Mingtao Nong2, Xiao Tang2, Dhanu Chettri2, Vishal Khandelwal2, Alaa
Almushaikeh2, Glen Isaac Maciel Garcia2, Xiaohang Li2
1
National Yunlin University of Science and Technology, Taiwan, 2 King Abdullah University of Science andTechnology (KAUST), Saudi Arabia

MoP-GR-4 （Poster）

Surface control of AlN single-crystal growth on SiC substrate
Jiahao Chen1, Qiyue Zhao2, Huangshu Zhang1, Zeren Wang1, Hao Yang1, Tong Han1, Jiejun Wu1, Tongjun
Yu1
1
School of physics, Peking University, China, 2 NAURA Technology Group Co.,Ltd., China

MoP-GR-5 （Poster）

High Quality AlN Film on Polycrystalline Diamond by ALD-Assisted AlN
Nucleation Layers
Yuan Gao1, Ruobing Wang1, Shengrui Xu1, Huake Su1, Yue Hao1
1
Xidian University, China

MoP-GR-6 （Poster）

Fabrication of AlN Single Crystal by Solution Growth Method using Ferritic
Stainless Steel Flux
Sen LI1, Masayoshi Adachi1, Makoto Ohtsuka1, Hiroyuki Fukuyama1
1
Tohoku University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-GR-7 （Poster）

GaN localization in high-temperature AlGaN growth over 1500℃
Atsushi Tomita1, Koki Fujii1, Takuya Kawakami1, Yusuke Takashima1,2, Yoshiki Naoi1,2, Kentaro
Nagamatsu1,21Tokushima University, Japan, 2 Institute of Post-LED Photonics, Japan

MoP-GR-8 （Poster）

Realization of AlN electron blocking layer with abrupt interface and its subsequent
improvement in UV-C light-emitting device characteristics
Akira Yoshikawa1, Ziyi Zhang1, Maki Kushimoto1, Koji Aoto1, Chiaki Sasaoka1, Hiroshi Amano1
1
Nagoya University, Japan

MoP-GR-9 （Poster）

Wet etching effect of AlN nanopillars in AlGaN grown on AlN nanopillars
Yoshinori Imoto1, Ryota Hasegawa1, Ayumu Yabutani1, Koki Hattori1, Ryosuke Kondo1, Ryoya Yamada1,
Keigo Imura1, Naoki Hasegawa1, Sho Iwayama1, MotoakiIwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1,
Hideto Miyake2
1
Meijo University, Japan, 2 Mie University, Japan

MoP-GR-10 （Poster）

Self-Assembly Nanopillar/Superlattice Hierarchical Structure: Boosting AlGaN
Crystalline Quality and Achieving High-Performance Ultraviolet Avalanche
Photodetector
Qing Cai1, Haifan You1, Bin Liu1, Hai Lu1, Youdou Zheng1, Rong Zhang1, Dunjun Chen1
1
Nanjing University , China

MoP-GR-11 （Poster）

246 nm DUVC LEDs using ultra-thin (0.3 nm) AlGaN-delta-AlGaN quantum wells
Hongjian Li1
1
Physics Department, Peking University, China

MoP-GR-12 （Poster）(Al,Ga)N heterostructures growth on AlN on Graphene
Julien Brault1, Aly Zaiter1, Maud Nemoz1, Aimeric Courville1, Mohamed Al Khalfioui1, Inukai Masanari2,
Yu Doko2, Takayuki Makino3, Akihiro Hashimoto2
1
Côte d'Azur University - CRHEA - CNRS, France, 2 Graduate School of Engineering, University of Fukui,Japan, 3 Faculty of Advanced Research, FIR Research Center, University of Fukui, Japan

MoP-GR-13 （Poster）

AlGaN and AlGaN/AlN superlattice growth by using ultra high-temperature
MOVPE
Atsushi Tomita1, Koki Fujii1, Takuya Kawakami1, Hideki Hirayama3, Yusuke Takashima1,2, Yoshiki Naoi1,2,
Kentaro Nagamatsu1,21Tokushima University, Japan, 2 Institute of Post-LED Photonics, Japan, 3 RIKEN, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-GR-14 （Poster）

Two-step growth of crack-free 5 μm-thick Al0.2Ga0.8N on sapphire substrate with
sputtered AlN nucleation layer
Yaqin Li1,2, Aiqin Tian1,2, Jianpin Liu1,2
1
University of Science and Technology of China, China, 2Suzhou lnstitute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Sciences, China

MoP-GR-15 （Poster）

Origin of black color in heavily doped n-type GaN
Tomoaki Sumi1, Takino Junichi2, Yoshio Okayama1, Shigeyoshi Usami2, Msayuki Imanishi2, Masashi
Yoshimura2, Yusuke Mori2
1
Panasonic Holdings Corporation, Japan, 2 Osaka University, Japan

MoP-GR-16 （Poster）

Selective Area Epitaxy of Degenerate n-GaN by MOCVD for Low Voltage RF
Applications
Jianxun Liu1,2, Haoran Qie1,2, Qian Li1,2, Yu Zhou1,2, Qian Sun1,2, Hui Yang1,2
1Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China, 2 University of
Science and Technology of China, China

MoP-GR-17 （Poster）

Multiple Negative-differential resistance regions based on AlN/GaN resonant
tunneling structures by the vertical growth of molecular beam epitaxy.
Jiajia Yao1, Guanlin Wu1, Fang Liu1, Junshuai Xue1, Jincheng Zhang1, Yue Hao1
1
Xidian University, China

MoP-GR-18 （Poster）

Principles for 2D Material Assisted Nitrides Epitaxial Growth
Zhiqiang Liu1, Peng Gao2, Qi Chen1, Junxi Wang1, Zhongfan Liu2, Jinmin Li1
1
institute of semiconductors, chinese academy of sciences, China, 2 peking university, China

MoP-GR-20 （Poster）

Growth of high quality GaN on Si (111) substrate employing pulse atomic layer
epitaxy (PALE) AlN buffer layer.
Muhammad Iznul Hisyam1, Norhaniza Rizuan1, Ahmad Shuhaimi1, Marwan Mansor1, Adam Williams2,
Mohd Rofei Mat Hussin3
1
Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science,
Universiti Malaya, 50603, Kuala Lumpur, Malaysia, Malaysia, 2 Silterra Malaysia Sdn.Bhd., Lot 8, Phase
II Kulim Hi-Tech Park, 09090Kulim, Kedah, Malaysia, Malaysia, 3 MIMOS Berhad, Technology Park
Malaysia, 57000 Kuala Lumpur, Malaysia, Malaysia

MoP-GR-21 （Poster）

Investigation of barriers in green GaInN quantum wells on GaN substrates
kotaro Nozu1, Motoki Nakano1, Ruka watanabe1, Mitsuki Yanagawa1, Tetsuya Takeuchi1, Motoaki Iwaya1,
Satoshi Kamiyama1, Kentaro Nonaka2, Yoshitaka Kuraoka2, Takashi Yoshino2
1
Meijo Univ. , Japan, 2 NGK Insurators,Ltd, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-GR-22 （Poster）

Crack analysis of 4-inch Freestanding GaN HVPE Growth
Deang Liu1, Shuliang Wei1, Liqing Wu1, Simon Tang1, Qiming Li1
1
Eta Research Ltd., China

MoP-GR-23 （Poster）

Growth and Decomposition of GaN Microstructures: Route to Wide Lateral
Overgrowth
Irene Manglano Clavero1, Christoph Margenfeld1, Jana Hartmann1, Andreas Waag1
1
Institute of Semiconductor Technology, Technische Universität Braunschweig, Germany

MoP-GR-24 （Poster）

Development of reliable 200 mm Si-foundry compatible GaN/Si substrates using
established GaN/Si suppliers
Kwang Hong LEE1, Lina KHAW1, Keith Cheng Yeow NG1, Kenneth LEE1, Eugene FITZGERALD1,2
1Singapore-MIT Alliance for Research and Technology, Singapore, 2 Massachusetts Institute of Technology,
United States of America

MoP-GR-25 （Poster）

Selective epitaxial growth of hBN on micron-sized epigraphene patterns using
MOVPE
Vishnu Ottapilakkal Ottapilakkal1, Abhishek Juyal1, Suresh Sundaram1,2,3, Phuong Voung1,3, Adama
Mballo1, L Beck4, G Nunn4, A Loiseau5, F Fossard5, J SMerot5, D Chapron6, T H Kauffmann6, J P
Salvestrini1,2,3, P L Voss1,2, W A de Heer4, C Berger1,4, A Ougazzaden1,2
1
CNRS, IRL 2958 Georgia Tech - CNRS, France, 2 Georgia Institute of Technology, School of Electricaland Computer Eng., United States of America, 3 Georgia Tech-Europe, France, 4 Georgia Institute ofTechnology, School of Physics, United States of America, 5 Lab. d'Etude des Microstructures, ONERACNRS, Universite Paris Saclay, France, 6 Lab. Matériaux Optiques, Photonique et Systèmes, Université deLorraine & CentraleSupélec, France

MoP-GR-26 （Poster）

Effects of growth temperature on properties of ultrathin B(N) layers grown on
sapphire by molecular beam epitaxy
Emil Mihai Pavelescu1, Iuliana Mihalache2, Raluca Gavrila3, Cosmin Romanitan4, Octavian Ligor5,
Esperanza Luna7, Achim Trampert8, Marius Stoian6
1
IMT-Bucharest, Romania, 2 IMT-Bucharest, Romania, 3 IMT-Bucharest, Romania, 4 IMT-Bucharest,
Romania, 5 IMT-Bucharest, Romania, 6 IMT-Bucharest, Romania, 7 PDI Berlin, Germany, 8 PDI Berlin,
Germany

MoP-GR-27 （Poster）

Epitaxial Growth of Hexagonal Boron Nitride on Silicon Substrates by MetalOrganic Chemical Vapor Deposition
Muzafar Ahmad Rather1, Ming-Yuan Lee1, Yeng-Fong Lu1, Shao-Shiang Hsue1, Tran Thuy Quy Hien1,
Yung-Ling Kao1, I-Chen Chen1, Kun-Yu Lai1, Jen-Inn Chyi11National Central University, Taiwan

MoP-GR-28 （Poster）

Epitaxial c-BN growth by magnetron sputtering
Kazuyuki Hirama1, Kazuhide Kumakura1, Yoshitaka Taniyasu1
1
NTT Basic Research Laboratories, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-GR-29 （Poster）

Low-Pressure Chemical Vapor Deposition of Hexagonal Boron Nitride on a-Plane
Sapphire
Kazuhiko Hara1, Taiki Oishi1, Soma Ota1, Ruki Aoike1, Yuma Takahashi1, Akira Takemura1, Hiroko
Kominami1
1
Shizuoka University, Japan

MoP-GR-30 （Poster）

Attojoule Hexagonal Boron
Neuromorphic Computing

Nitride-Based

MemristorforHigh-Efficient

Jiye Kim1, Jaesub Song1, Hyunjoung Kwak1, Chang-Won Choi1, Kyungmi Noh1, Seokho Moon1, Inyong
Hwang1, Hokyeong Jeong1, Si-Young Choi1, Seyoung Kim1, Jong Kyu Kim
1
Pohang University of Science and Technology, Korea

MoP-GR-31 （Poster）

Growth of high optical quality MoSe2 monolayers on epitaxial hBN
Katarzyna Ludwiczak1, Aleksandra Krystyna Dąbrowska1, Johannes Binder1, Mateusz Tokarczyk1, Jakub
Iwanski1, Bogusława Kurowska2, Jan Turczynski2, Grzegorz Kowalski1, Roman Stępniewski1, Wojciech
Pacuski1, Andrzej Wysmołek1
1Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland, 2 Polish Academy of
Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

MoP-GR-32 （Poster）

Development of thick III-N layers by plasma-assisted HVPE growth technique
Galia Pozina1, Natalia Abrikossova1, Chih-Wei Hsu1, Carl Hemmingsson1
1
Linköping University, Sweden

MoP-GR-33 （Poster）

HVPE growth of Mn-doped GaN single crystals
Friederike Zimmermann1, Sven Jachalke2, Patrick Hofmann2, Dirk Bastin2, Roman Doradzinski2, Andreas
Großer1, Thomas Mikolajick1,3, Stefan Eichler2
1
NaMLab gGmbH, Germany, 2 Freiberger Compound Materials GmbH, Germany, 3 Institute of
Semiconductors and Microsystems, TU Dresden, Germany

MoP-GR-34 （Poster）

Thermodynamic analysis for halide vapor phase epitaxy of Sn-doped n-type GaN
Kazuki Ohnishi1, Kansuke Hamasaki2, Naoki Fujimoto1, Shugo Nitta1, Hirotaka Watanabe1, Yoshio
Honda1,3,4, Hiroshi Amano1,3,4
1
Institute of Materials and Systems for Sustainability, Nagoya University, Japan, 2 Graduate School ofEngineering, Nagoya University, Japan, 3 Deep Tech Serial Innovation Center, Nagoya University, Japan,
4
Institute for Advanced Research, Nagoya University, Japan

MoP-GR-35 （Poster）

Stress Analysis for III-Nitride Epitaxy Based on An Extended Stoney’s Equation
Mengda Li1, Huangshu Zhang1, Yutian Cheng1, Jinmin He2, Nanliu Liu3, Zhijian Yang1, Tong Han1, Jiejun
Wu1, Guoyi Zhang1,2,3, Tongjun Yu1
1
School of Physics, Peking University, China, 2 Sino Nitride Semiconductor CO., LTD, China, 3 Dongguan
Institute of Optoelectronics, Peking University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-GR-36 （Poster）

Crystallization of HVPE-GaN on Semi-polar Ammonothermal GaN Seeds. Analysis
of Growth Conditions.
Tomasz Sochacki1, Piotr Jaroszynski1, Kacper Sierakowski1, Boleslaw Lucznik1, Michal Fijalkowski1,
Michal Bockowski1,2
1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2 CIRFE, IMaSS, Nagoya
University, Japan

MoP-GR-37 （Poster）

SAG of InGaN NWs and self-organized GaN micro-domains by HVPE
Elias Semlali1, Arthur Sauvagnat1, Jihen Jridi1, Geoffrey Avit1, Yamina Andre1, Evelyne Gil1, Dyhia
Tamsaout2, Camille Barbier2, Jean-Christophe Harmand2, Maria Tchernycheva2, Vladimir Dubrovskii3,
Philip Shields4, Agnès Trassoudaine1
1
Université Clermont Auvergne, CNRS, SIGMA Clermont, Institut Pascal, 63000 Clermont-Ferrand,
France, 2 Centre de Nanosciences et de Nanotechnologies (C2N), CNRS UMR 9001, Univ. Paris-Saclay,
91120 Palaiseau, France, 3 Faculty of Physics, St. Petersburg State University, St. Petersburg, Russia, 4Department of Electronic & Electrical Engineering, University of Bath, UK

MoP-GR-38 （Poster）

Boule and wafer orientation quantification in less than 10 seconds
Lars Grieger1
1
Malvern Panalytical B.V., Netherlands

MoP-GR-39 （Poster）

Buried defect-free GaN microcolums as a procesless approach for threading
dislocation density reduction
Damian Pucicki1,2, Wojciech Olszewski1,3, Paulina Ciechanowicz1,3, Jarosław Serafińczuk1,2, Adrianna
Piejko1,2, Detlef Hommel1,41Łukasiewicz Research Network - PORT Polish Center for Technology Development, 54-066 Wrocław,
Poland, 2 Department of Nanometrology, Wrocław University of Science and Technology, 50-372 Wrocław,
Poland, 3 Instituteof Experimental Physics, University of Wrocław, 50-204 Wrocław, Poland, 4 Institute of
Low Temperature and Structure Research PAS, 50-422 Wrocław, Poland

MoP-GR-40 （Poster）

Liquid Phase Epitaxy of GaN Films on Sapphire Substrates under an AtmosphericPressure Nitrogen Ambience
Masataka Katsuumi1, Tetsuya Akasaka1
1
Meisei University, Japan

MoP-GR-41 （Poster）

Pore-assisted separation for fabrication of free-standing GaN substrates based onelectro-chemically formed porous layer
Masafumi Yokoyama1, Fumimasa Horikiri1, Hisashi Mori1, Taichiro Konno1, Hajime Fujikura1
1
SUMITOMO CHEMICAL Co., Ltd., Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-GR-42 （Poster）

Low temperature plasma-enhanced atomic layer epitaxy of ultrathin indium nitride
films
Jeffrey Woodward1, Jennifer Hite1, Daniel Pennachio1, David Boris1, Michael Johnson2, Michael Mastro1,
Scott Walton1
1
U.S. Naval Research Laboratory, United States of America, 2 Huntington Ingalls Industries, United Statesof America

MoP-GR-43 （Poster）

Epitaxy of thick GaN drift layers on Si (111) for vertical power devices
Sondre Michler1, Sarad Thapa1, Sven Besendörfer2, Roland Weingärtner2, Youssef Hamdaoui3, Idriss Abid3,
Farid Medjdoub3, Eldad Bahat Treidel5, Enrico Brusaterra5, Frank Brunner5, Oliver Hilt5, Elke Meissner2,41
Siltronic AG, Germany, 2 Fraunhofer Institute for Integrated Systems and Device Technology IISB,
Germany, 3 CNRS IEMN, France, 4 Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany, 5
Ferdinand-Braun-Institut, Germany

MoP-GR-44 （Poster）

The study on the depth dependent strain profiling of GaN-based power electronics
using surface plasmon enhanced Raman spectroscopy
Jae Sang Kang1, Jae Sun Kim1, Jung Ki Park1, Gyeong Eun Choi1, Gyu Hwi Jeong1, Young Boo Moon2,
Deok Gyu Bae3, Seongyoung Lim4, Jung Hoon Song1,4
1
Kongju National University, Korea, 2 UJL Inc, Korea, 3 Hexasolution Co., Ltd, Korea, 4 AccuOptotec Co.,
Korea

MoP-GR-45 （Poster）

A Study of vertical GaN PiN diodes with intrinsic AlGaN drift layer grown using
metal-organic chemical vapor deposition
Yunseok Heo1, Joocheol Jeong1, Minho Kim1, Jooyong Park1, Joonhyuk Lee1, Okhyun Nam1
1
Tech university of Korea, Korea

MoP-GR-46 （Poster）

Study of 2-DEG in AlGaN/AlGaN/AlN buffer HEMTs grown on SiC substrate by
MOCVD
Joon Hyuk Lee1, Joocheol Jung1, Minho Kim1, Yunseok Heo1, Jooyong Park1, Jaejin Heo1, Okhyun Nam1
1
Tech University Korea (TUK), Korea

MoP-GR-47 （Poster）

Red electroluminescence
heterostructures

from

Eu-doped

ZnO

in

p-GaN/Al2O3/n-ZnO

Kazuto Nishimura1, Jun Tatebayashi1, Shuhei Ichikawa1, Shinya Yamada1, Yoshikata Nakajima1, Kazuhisa
Sato1, Kohei Hamaya1, Yasufumi Fujiwara1
1
Osaka University, Japan

MoP-CH-1 （Poster）

Structural and electrical characteristics of GaN, n-GaN and A1xGa1−xN for UV
LEDs
Arivazhagan P1, Baskar K2
1
Anna University, India, 2 Indian Institute of Information Technology, India

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-CH-2 （Poster）

Strain-inducing Nanostructures for Large Spectral Red-shift on InGaN/GaN Single
Quantum Well
WAI YUEN FU1, BO LU1, FABRICE SEMOND2, HOI WAI CHOI1
1
University of Hong Kong, Hong Kong, 2Université Côte d’Azur, CNRS, CRHEA, France

MoP-CH-3 （Poster）

Cathodoluminescence spectroscopy revealing the interplay of structural and point
defects in GaN nanowires grown by molecular beam epitaxy
Mikel Gómez Ruiz1, Matthew Brubaker2, Kris Bertness2, Oliver Brandt1, Jonas Lähnemann1
1Paul-Drude-Institut für Festkörperelektronik, Germany, 2 National Institute of Standards and Technology,
United States of America

MoP-CH-4 （Poster）

The analysis of the surface band bending by numerical simulation of the absorptionedge
Sha Han1, Juemin Yi1, Wentao Song1, Kebei Chen1, Shunan Zheng1, Yumin Zhang1, Ke Xu1
1
Platform for Characterization and Test, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese
Academy of Sciences (CAS), Suzhou 214123, Jiangsu, People’s Republic of China, China

MoP-CH-5 （Poster）

Deep UV Quantum Well Growth Temperatures: A Microscopy Study
Douglas Cameron1, Marcel Schilling2, Gunnar Kusch3, Paul R. Edwards1, Tim Wernicke2, Michael Kneissl2,
Rachel A. Oliver3, Robert W. Martin1
1
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, U.K, UK, 2 Institute of Solid
State Physics, Technische Universität Berlin, 10623 Berlin, Germany , Germany, 3 Department of Materials
Scienceand Metallurgy, University of Cambridge, CB3 OFS Cambridge, U.K, UK

MoP-CH-6 （Poster）

Strong impact of quantum electrodynamics on photoluminescence fromGaInN/GaN quantum wells
Andreas Hangleiter1, S. Sidikejiang1, R. De Vasconcellos Lourenço1, P. Henning1, P. Horenburg1, H.
Bremers1, U. Rossow1
1
Institute of Applied Physics, Technische Universität Braunschweig, Germany

MoP-CH-7 （Poster）

Carrier dynamics of LED structure based on InGaN/GaN multiple quantum wells
under the effect of numbers of superlattice layers
Fatimah Alreshidi1, Hadeel Alamoudi1, Lih-Ren Chen 2, Tien-Chang Lu 2, Iman S Roqan 1
1
Semiconductor and Materials Spectroscopy Group, Physical Sciences and Engineering Division, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia, Saudi Arabia, 2Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao
Tung University, Taiwan

MoP-CH-8 （Poster）

Relationship between Internal Quantum Efficiency and Point Defects in AlGaN
Quantum Wells on Low-Dislocation Sputtered AlN Templates
Megumi Fujii1, Yuta Onishi1, Kosuke Inai1, Ryota Oshimura1, Satoshi Kurai1, Narihito Okada1, Kenjiro
Uesugi2, Hideto Miyake2, Yoichi Yamada1
1
Yamaguchi University, Japan, 2 Mie University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-CH-9 （Poster）

Microstructral Analysis of Fully Epitaxial Ferroelectric ScAlN
Jinlin Wang1, Haotian Ye1, Rui Wang1, Tao Wang1,2, Ping Wang1
1
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,
School of Physics, Peking University, Beijing 100871., China, 2 Electron Microscopy Laboratory, Schoolof Physics, Peking University, Beijing 100871., China

MoP-CH-10 （Poster）

In-plane lattice parameter behaviour versus temperature of relaxed InGaN pseudosubstrates
frederic barbier1, guillaume Veux1, patrice Gergaud1, amelie Dussaigne1
1
cea Grenoble, France

MoP-CH-11 （Poster）

Characterization of Van der Waals Crystals and GaN Hybridized Structures by
Surface-Sensitive Techniques
Dominika Majchrzak1,2, Adrianna Piejko1,5, Katarzyna Opołczynska1,3, Wojciech Olszewski1,3, Miłosz
Grodzicki1,4, Detlef Hommel1,2, Robert Kudrawiec1,41Łukasiewicz Research Network - PORT Polish Center for Technology Development, Poland, 2 Institute of
Low Temperature and Structure Research, Polish Academy of Sciences, Poland, 3 Institute of Experimental
Physics, University of Wrocław, Poland, 4 Department of Semiconductor Materials Engineering, Wrocław
University of Science and Technology, Poland, 5 Department of Nanometrology, Wrocław University of
Science and Technology, Poland

MoP-CH-12 （Poster）

Fast and reliable determination of the critical layer properties in enhancement-mode(Al,Ga)N/GaN HEMT structures through UV spectral reflectance
Johannes K. Zettler1, Daniel Seidlitz1, Frank Brunner2, Eugen Speiser1, Markus Weyers2
1
LayTec AG, Germany, 2 Ferdinand-Braun-Institut (FBH), Germany

MoP-CH-13 （Poster）

Spatial Patterning of Porous GaN by Ion Implantation
Matthias Hoormann1,2, Frederik Lüßmann1,2, Christoph Margenfeld1,2, Stefanie Kroker1,2, Carsten Ronning3,
Jana Hartmann1,2, Florian Meierhofer1,2, Andreas Waag1,21Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer-Straße: 66,
38106 Braunschweig, Germany, 2 Laboratory for Emerging Nanometrology (LENA), Technische
Universität Braunschweig, Langer Kamp: 6 a/b, 38106 Braunschweig, Germany, 3 Institute of Solid State
Physics, Friedrich Schiller University Jena, 07743 Jena, Germany

MoP-CH-14 （Poster）

Optimisation of GaN / porous GaN distributed Bragg reflectors grown on Si
Saptarsi Ghosh1, Maruf Sarkar1, Benoit Guilhabert2, Miles Toon2, Martin Frentrup1, Menno J. Kappers1,
Michael Strain2, Rachel A. Oliver1
1
Department of Materials Science and Metallurgy, University of Cambridge, UK, 2 Institute of Photonics,
Department of Physics, University of Strathclyde, UK

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-CH-15 （Poster）

On the Threading Dislocation Distribution in Gallium Nitride Epilayers
Cosmin Romanitan1, Andrian V. Kuchuk2,3, Mykhailo Barchuk4
1
National Institute for R&D in Microtechnologies, Romania, 2 Institute for Nanoscience and Engineering,
University of Arkansas, Fayetteville 72701, USA, United States of America, 3 Lashkaryov Institute of
Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv 03028, Ukraine, Ukraine, 4Institute of Materials Science, TU Bergakademie Freiberg, Freiberg 09596, Germany, Germany

MoP-CH-16 （Poster）

Misorientation and strain in GaN microfins
Jochen Bruckbauer1, Irene Manglano Clavero2, Christoph Margenfeld2, Jana Hartmann2, Andreas Waag2,
Aimo Winkelmann1,3, Carol Trager-Cowan1, Robert W. Martin1
1
University of Strathclyde, UK, 2 Technische Universität Braunschweig, Germany, 3 AGH University of
Science and Technology, Poland

MoP-CH-17 （Poster）

Microstructures in the single-crystalline/twin-free semipolar (10-13) AlN epilayersgrown on the m-Al2O3 (10-10) substrates
XUQIANG SHEN1, Kazutoshi Kojima1
1
National Institute of Advanced Industrial Science and Technology (AIST), Japan

MoP-CH-18 （Poster）

Analysis of Zn Diffusion in Various Crystallographic Directions of GaN Grown by
HVPE
Kacper Pawel Sierakowski1, Rafal Jakiela2, Piotr Jaroszynski1, Michal Fijalkowski1, Tomasz Sochacki1,
Malgorzata Iwinska1, Marcin Turek3, Akira Uedono4, Michael A. Reshchikov5, Michal Bockowski1
1
Institute of High Pressure Physics PAS, Poland, 2 Institute of Physics PAS, Poland, 3 Institute of Physics
Maria Sklodowska Curie University Lublin, Poland, 4 Division of Applied Physics Faculty of Pure andApplied Science University of Tsukuba, Japan, 5 Department of Physics Virginia Commonwealth University,
United States of America

MoP-CH-19 （Poster）

HVPE GaN:Ge vs Ion-Implanted HVPE GaN: Electrical Properties Investigation
Kacper Pawel Sierakowski1, Piotr Jaroszynski1, Rafal Jakiela2, Michal Fijalkowski1, Tomasz Sochacki1,
Malgorzata Iwinska1, Marcin Turek3, Michal Bockowski1,41
Institute of High Pressure Physics PAS, Poland, 2 Institute of Physics PAS, Poland, 3 Institute of Physics
Maria Sklodowska Curie University Lublin, Poland, 4 CIRFE, IMaSS, Nagoya University, Japan

MoP-CH-20 （Poster）

Stucture of V-defects in Long Wavelength GaN-based Light Emitting Diodes
Feng Wu1, Jacob Ewing1, Cheyenne Lynsky1, Michael Iza1, Shuji Nakamura1, Steven P. DenBaars1, James
S. Speck1
1
Materials Department, UC Santa Barbara, United States of America

MoP-CH-21 （Poster）

Current Saturation Behavior in GaN Polarization Superjunction (PSJ) Hybrid
DiodesYangming Du1, Ekkanath Madathil Sankara Narayanan1, Hiroji Kawai2, Shuichi Yagi2, Hironobu Narui2
1
The university of Sheffield, UK, 2 POWDEC.K.K, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-CH-22 （Poster）

High Thermal Coefficient Resistance for Heavily Si-doped GaAsN after Annealing
Takashi Tsukasaki1, Hirokazu Sasaki1, Miki Fujita2, Toshiki Makimoto1
1
Waseda University, Japan, 2 NIT Ichinoseki College, Japan

MoP-CH-23 （Poster）

Carrier diffusion coefficient in a matter of minutes?
Greta Bucyte1, Kipras Redeckas1, Kazimieras Nomeika2, Karolis Neimontas1
1
Light Conversion, Lithuania, 2 Institute of Photonics and Nanotechnology, Vilnius University, Lithuania

MoP-CH-24 （Poster）

Investigation of non-destructive and non-contact electrical characterization of <1mm thick GaN thin films on ScAlMgO4 substrates by THz-TDSE
Hayato Watanabe1, Dingding Wang1, Takashi Fujii1,3,4, Toshiyuki Iwamoto3, Tsuguo Fukuda4, Momoko
Deura2, Tsutomu Araki1
1
College of Science & Engineering, Ritsumeikan University, Japan, 2 R-GIRO, Ritsumeikan University,
Japan, 3 NIPPO PRECISION Co., Ltd, Japan, 4 Fukuda Crystal Lab., Japan

MoP-CH-26 （Poster）

Energization time dependence of electrical properties of anodized n-GaN in two-step
wet etching method
Gaku Kamio1, Hiroshi Fujioka2, Narihiko Maeda1
1Tokyo University of Technology, Japan, 2 Institute of industrial Science, The University of Tokyo, Japan

MoP-CH-27 （Poster）

Study on the contact between p-GaN with Pd/Ni/Au electrodeJunfei Wang1,2, Zhenqian Gu1, Junhui Hu1,2, Chao Shen1,2,3
1
Fudan University, China, 2 ZGC Institute of Ubiquitous-X Innovation and Applications, China, 3 Peng
Cheng Laboratory, China

MoP-CH-28 （Poster）

Full ceramic layer stacks for harsh environment magnetoelectric sensors
Rebecca Petrich1, Younes Slimi1,2, Hauke Honig1, Bernd Hähnlein1, Christina Helm1, Heike Bartsch1,
Raphael Kuhnen3, Dietmar Frühauf3, Jens Müller1,Peter Schaaf1, Rüdiger Schmidt-Grund1, Stefan
Krischok1, Katja Tonisch1
1
Institute of Micro- and Nanotechnology MacroNano®, Technische Universität Ilmenau, P.O. Box 100565,
98684 Ilmenau, Germany, 2 Applied Optics Laboratory, Institute of Optics and Precision Mechanics,
University of Setif 1, 19000, Setif, Algeria, 3 Endress+Hauser AG, TTD Technology Development, 79689
Maulburg, Germany

MoP-CH-29 （Poster）

Effect of Donor and Acceptor Doping on the Thermal Conductivity of GaN
Dat Quoc Tran1, Alexis Papamichail1, Rosalia Carrascon1, Muhammad Nawaz2, Tania Paskova3, Vanya
Darakchieva1,4,5, Plamen Paskov1
1
Center for III-Nitride Technology, C3NiT-Janzen and Department of Physics, Chemistry and Biology,
Linköping University, Sweden, 2 Hitachi Energy, Sweden, 3 Department of Electrical and Computer
Engineering, North Carolina State University, United States of America, 4 THz Materials Analysis Center(TheMAC), Linköping University, Sweden, 5 Center for III-nitride Technology, C3NiT-Janzen and
NanoLund and Solid State Physics, Lund University,Sweden

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-CH-30 （Poster）

Structural and electronic properties of rock salt (Al,Sc)N random alloys from ab
initioJan M. Waack1, Markus Kremer1, Michael Czerner1, Christian Heiliger1
1
Justus Liebig University Giessen, Germany

MoP-CH-31 （Poster）

First report on Analytical Model for Optimization of GaN Vertical Power FinMOSFET Device-Design
Biplab Sarkar1, Tanmoy Pramanik1
1
Indian Institute of Technology Roorkee, India

MoP-CH-32 （Poster）

Fluorine termination on dangling bonds of gallium nitride surfaces and defects
Tomoe Yayama1, Nanami Iba1, Takahiro Nagata2, Toyohiro Chikyow2
1
Kogakuin University, Japan, 2 National Institute for Materials Science, Japan

MoP-CH-33 （Poster）

Simulation-based analysis of the effect of alpha irradiation on GaN particle
detectors
Qianyu Hou1, Qing Cai2, Dunjun Chen2
1
Guangxi University, China, 2 Nanjing University, China

MoP-CH-34 （Poster）

Natural band alignments of rock-salt structured AlScN and GaScN alloys
Yuichi Ota1, Masataka Imura2
1
Tokyo Metropolitan Industrial Technology Research Institute, Japan, 2 National Institute for Materials
Science, Japan

MoP-CH-35 （Poster）

Spectroscopic Investigation on the Impact of Si and Mg Doping in Self-assembled
GaN Nanowires Grown on Si(111) by Molecular Beam Epitaxy
Soumyadip Chatterjee1, Ritam Sarkar1, Swagata Bhunia1, Ajoy Biswas1, Apurba Laha1
1
Indian Institute of Technology Bombay, India

MoP-OD-1 （Poster）

Preparation and Characterization of High Stability Perovskite Nanocrystals inColor-converted AlGaN Micro-LED
Xuejiao Sun1, Chunhui Guo1,2, Shuyu Tian3, Xuecheng Wei1, Junxi Wang1, Naixin Liu1,2
1
Institute of Semiconductors, Chinese Academy of Sciences, China, 2 Shanxi Zhongke Lu’an Ultraviolet
Optoelectronics Technology Co., Ltd. Shanxi, China, 3 Institute for Advanced Materials and Technology,
University of Science and Technology Beijing, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-OD-2 （Poster）

The effects of frequency and bias on negative capacitance in InGaN/GaN LED
devices
Yuchen Li1, Zhizhong Chen1,2,3, Chuhan Deng1, Boyan Dong1, Daqi Wang1, Zuojian Pan1, Haodong Zhang1,
Jingxin Nie1, Weihua Chen1, Fei Jiao1,4, Xiangning Kang1, Qi Wang2, Guoyi Zhang1,2, Bo Shen1,3, Wenji
Liang5
1
State Key Lab for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871,
China, China, 2 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong 523808,
China , China, 3 Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, Jiangsu 226000,
China, China, 4 State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking
University, Beijing 100871, China, 5 AET Displays Limited Co., Ltd, Dongguan, Guangdong, China, China

MoP-OD-3 （Poster）

Selective patterning of high-depth nanopillar on InGaN/GaN wafer
Bo Lu1, Wai Yuen Fu1, Hoi Wai Choi1
1
The University of Hong Kong, Hong Kong

MoP-OD-4 （Poster）

Wafer-Scale Monolithic Integration of Micro-Light-Emitting Diodes and Quantum
Dots for Full-Color Displays
Feifan Xu1, Yimeng Sang1, Tao tao1, zhe zhuang1, rong zhang2, bin liu1
1
Nanjing University, China, 2 Xiamen University, China

MoP-OD-6 （Poster）

Origin of Size-Dependent Efficiency Droop in InGaN-Based Micro LEDs
Jong-In Shim1, Dong-Soo Shin1, Hyundon Jung2
1
Hanyang University ERICA, Korea, 2 EtaMax, Korea

MoP-OD-7 （Poster）

Uniform Strain-Free InGaN Virtual Substrate: Optimization at Nanoscale
Carole PERNEL1, Ilyes Medjahed1, Margaux Audibert1, Frederic Barbier1, Amelie Dussaigne1, GuillaumeVeux1, Brigitte Martin1, Ludovic Dupré1, Van-Hoan Le1, Névine Rochat1, Constantin Matei1
1
University of Grenoble-Alpes, CEA LETI, Minatec Campus, France

MoP-OD-8 （Poster）

A Strategy to Grow Three Dimensional InGaN/GaN Heterostructure Exclusively on
Non-Polar m-Plane of Two-Step Etched GaN Nanorods
MANDAR ASHOK KULKARNI1, HAMZA THAALBI1, FAWAD TARIQ1, SANG-WAN RYU1
1
DEPARTMENT OF PHYSICS, CHONNAM NATIONAL UNIVERSITY, GWANGJU, KOREA, REPUBLIC
OF, Korea

MoP-OD-9 （Poster）

MBE-grown Wavelength-switchable Ultraviolet Light Emitting Diodes
Pushan Guha Roy1, Sayantani Sen1, Anirban Bhattacharyya1
1
University of Calcutta, India

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-OD-10 （Poster）

Transparent p-type layer with highly reflective p-type electrodes for improving theperformance of AlGaN-based DUV-LEDs
Jing Lang1, Fujun Xu1, Jiaming Wang1, Liubing Wang1, Bo Shen1
1
Peking University, China

MoP-OD-11 （Poster）

Enhancement of Deep Ultraviolet AlGaN-based LEDs via the Piezo-phototronic
Effect-Simulation Aspect
Ding Li1,2, Haiming Wang1,2, Yanjun Liao1,3, Zhong Lin Wang1,2,4
1
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, China, 2 University ofChinese Academy of Sciences, China, 3 Guangxi University, China, 4 Georgia Institute of Technology,
United States of America

MoP-OD-12 （Poster）

Investigations of p-type doping and multiple quantum wells for AlGaN-based deep
ultraviolet and far deep ultraviolet light-emitting diodes
Dabing Li1,2, Xiaojuan Sun1, Ke Jiang1, Shunpeng Lv1, Jianwei Ben1, Shanli Zhang1
1
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,
China

MoP-OD-13 （Poster）

High speed AlGaN-based monolithically integrated photonic chips for solar-blindcommunications
Rui He1, Junxi Wang1, Jinmin Li1, Tongbo Wei1
1
University of Chinese Academy of Sciences, China

MoP-OD-14 （Poster）

Effect of Extended Defects on the Performance of AlGaN QDs for Far-UVC
Electron-Beam Pumped Emitters
Jesus Cañas1, Nevine Rochat2, Adeline Grenier2, Edith Bellet-Amalric1, Anjali Harikumar1, Zineb Saghi2,
Audrey Jannaud2, Samba Ndiaye3, Catherine Bougerol4, Lorenzo Rigutti3, Eva Monroy1
1
Univ. Grenoble-Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 38000 Grenoble, France, 2 Univ. Grenoble
Alpes, CEA, LETI, 38000 Grenoble, France, 3 UNIROUEN, CNRS, GPM, Normandie Université, 76000
Rouen, France, 4 Univ. Grenoble-Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France

MoP-OD-15 （Poster）

Effect of Mg doping on graded Al AlxGa1-xN for UVA and UVB LEDs
Peter Milner1,2, Vitaly Z Zubialevich1, Sandeep M Singh1,2, Robert Finn1,2, Brian Corbett1, Peter J Parbrook
1,2
1Tyndall National Institute, Ireland, 2 University College Cork, Ireland

MoP-OD-16 （Poster）

Effect of sidewall passivation on AlGaN-based deep ultraviolet light-emitting diodes
Zesen Liu1, Fangfang Ren1,2, Jiandong Ye1, Weizong Xu1, Jianhong Zhang1, Xinghua Liu1, Dong Zhou1,
Rong Zhang1, Hai Lu1
1Nanjing University, China, 2 Shenzhen Research Institute of Nanjing University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-OD-17 （Poster）

Comparison of optical and electrical properties of Ga-polar and N-polar GaN-based
green VCSELs
Yachao Wang1, Yanhui Chen1, Zhongming Zheng1, Tao Yang1, Yang Mei1, Baoping Zhang1
1
Xiamen University, China

MoP-OD-18 （Poster）

Improved performance of GaInN multiple-quantum-well photovoltaic cells on freestanding GaN substrates with TMAH treatment
Nan Hu1, Takahiro Fujisawa1, Akira Mase1, Tomoki Kojima1, Takashi Egawa1,2, Makoto Miyoshi1,21Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Japan, 2Innovation Center for Multi-Busness of Nitride Semiconductors, Nagoya Institute of Technology, Japan

MoP-OD-19 （Poster）

Advances towards higher efficiency in group III nitride photovoltaics: a-Si
interlayer
Michael Sun1, Javier Olea2, Fernando B Naranjo1, Sirona Valdueza-Felip1, Ruben G Cornejo1, Bejamin
Damilano3
1
University of Acalá, Spain, 2 Universitiy Complutense of Madrid, Spain, 3 CRHEA-CNRS, France

MoP-OD-20 （Poster）

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on
Enhanced p-GaN/AlGaN/GaN HEMTs
Haiping Wang1, Haifan You1, Dunjun Chen1, Hai Lu1, Rong Zhang1, Youdou Zheng1
1
Nanjing University, China

MoP-OD-21 （Poster）

Thermally Stable Ultra Low Dark Current Visible Blind GaN Based MSM
Photodetector
BALKRISHNA CHOUBEY1, Apurba Laha, Kankat Ghosh1
1
Indian Institute of Technology Jammu, India

MoP-OD-22 （Poster）

Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes with Suppressed Surface
Leakage Current and Uniform Avalanche Breakdown
Haifan You1, Haiping Wang1, Dunjun Chen1, Hai Lu1, Rong Zhang1, Youdou Zheng1
1
Nanjing University, China

MoP-OD-23 （Poster）

Visible/Solar blind UV Photodetectors based on AlGaN/GaN
PINKI PAL1, Umang Singh2, Bhupesh Bhardwaj1, Amandeep Kaur1, Sami Suihkonen3, Dinesh Kabra1,
Subhabrata Dhar1, Apurba Laha2, Suddhasatta Mahapatra1
1
Department of Physics, Indian Institute of Technology Bombay, Mumbai-400076, India, India, 2Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India,
India, 3 Department ofElectronics and Nanoengineering, Aalto University, FI-00076, Aalto, Finland,
Finland

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-OD-24 （Poster）

GaN/Ga2O3 p-n junction using mechanical exfoliation for photonics applications
Yukyung Kim1, Mankyung Kim1, Kwang Hyun Baik2, Soohwan Jang1
1
Dankook University, Korea, 2 Hongik University, Korea

MoP-OD-25 （Poster）

Highly responsive UV photodetectors based on the p-GaN HEMTs structure with atransparent ITO gate
Zhanfei Han1, Hongyue Wang2, Xiangdong Li1,3, Weitao Yang1, Zesheng Lv4, Yuebo Liu2, Meng Wang1,2,
Shuzhen You1,3, Jincheng Zhang1,3, Yue Hao1,3
1Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian
University, China, 2 China Electronic Product Reliability and Environmental Testing Research Institute,
China, 3 KeyLaboratory of Wide Bandgap Semiconductor Materials and Devices, China, 4 School ofElectronics and Information Technology, Sun Yat-sen University, China

MoP-OD-26 （Poster）

Non-Planar ITO/AlGaN/GaN Ultraviolet Photodetector with Broadband Spectrumand High Responsivity
Yuhan Pu1,2, Yung C. Liang1,21National University of Singapore, Singapore, 2 National University of Singapore (Suzhou) ResearchInstitute, China

MoP-OD-27 （Poster）

Hybrid Integration of GaN-based MicroLED Arrays with Metal Nanowires
Maximilian Vergin1,2, Georg Schöttler1,2, Steffen Bornemann1,2, Mayra Garcés-Schröder1,2, Jana
Hartmann1,2, Florian Meierhofer1,2, Andreas Waag1,21Institute of Semiconductor Technology, Technische Universität Braunschweig , Germany, 2 Laboratory for
Emerging Nanometrology, Technische Universität Braunschweig , Germany

MoP-OD-28 （Poster）

Process for separating AlGaN-based LED structures from sapphire substrates byphotoelectrochemical etching
Yoshio Honda1,2,3, Yuta Furusawa1, Ryoko Tsukammoto1, Yoshioki Saito4, Koji Okuno4, Kengo Nagata4,
Shinya Boyam4, Atsushi Miyazaki4, Maki Kushimoto5, Hiroshi Amano1,2,3
1
Institute of Materials and Systems for Sustainability, Nagoya Univ., Japan, 2 Institute for Advanced
Research, Nagoya Univ., Japan, 3 Deep Tech Serial Innovation Center, Nagoya Univ., Japan, 4 Toyoda
Gosei Co., Ltd., Japan, 5 Department of Electronics, Nagoya Univ., Japan

MoP-OD-29 （Poster）

Impact of free-standing GaN substrate back surface preparation for laser ohmic
contact
Szymon Stanczyk1, Jean-François Carlin1, Nicolas Grandjean1
1
LASPE, EPFL, Lausanne, Switzerland

MoP-OD-30 （Poster）

Improved hole injection efficiency in AlGaN DUV LEDs with minimized band offset
at the p-EBL/hole supplier interface
Wentao Tian1,2, Mengran Liu1,2, Shuti Li3, Chao Liu1,2
1
Shandong University, China, 2 Shenzhen Research Institute, Shandong University, China, 3 South China
Normal University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-ED-1 （Poster）

A Fast Novel Method for Predicting Load-pull Impedance in RF AlGaN/GaN HEMTLongge Deng1, Hao Lu1, Xiaohua Ma1, Yue Hao1
1
Xidian University, China

MoP-ED-2 （Poster）

Study of the kink effect in AlN/GaN HEMTs on Si substrate
lingjie qin1, jiejie zhu1, siyu liu1, jingshu guo1, bowen zhang1, yuxi zhou1, xiaohua ma1
1
Xidian University , China

MoP-ED-3 （Poster）

Half-FinFET based on double-channel AlGaN/GaN heterostructure
Ang Li1, Chong Wang1, Xuefeng Zheng1, Xiaohua Ma1, Yaopeng Zhao1, Kai Liu1, Yunlong He1, Yue Hao1
1
School of Microelectronics, Xidian University, China

MoP-ED-4 （Poster）

GaN-based MIS-HEMT Nominally Free of Access Resistances with Excellent Linear
Performances and a Steep Rising gm
Xinkun Zhang1,2, Yu Zhou2, Qian Li2, Shuqian Xu1,2, Haoran Qie1,2, Qingru Wang1,2, Jianxun Liu2, Xiujian
Sun1,2, Quan Dai2, Xiaoning Zhan1,2, Qian Sun1,2, Hui Yang1,2
1
University of Science and Technology of China, China, 2 Suzhou Institute of Nano-tech and Nano-Bionics
Chinese Academy of Sciences, China

MoP-ED-5 （Poster）

On GaN HEMT Small Signal Models at mm-wave Bands: Importance of Identifying
the Poles
Biplab Sarkar1, Hiroshi Amano2
1
Indian Institute of Technology Roorkee, India, 2 Nagoya University, Japan

MoP-ED-6 （Poster）

Optimized Transconductance and Cut-off Frequency Linearity of InAlN HEMT via
Asymmetrical Regrown Ohmic Contact Technology
Can Gong1, Minhan Mi1, Yuwei Zhou2, Xiaohua Ma1
1
School of Microelectronics, Xidian University, China, 2 School of School of Advanced Materials andNanotechnology, Xidian University, China

MoP-ED-7 （Poster）

Examining the Influence of AlGaN Back Barrier on Drain Lag in GaN HEMTs
Chin-Jung Chiu1, Po-Tsung Tu2, Hui-Yu Chen2, Chang-Yan Hsieh2, Po-Chun Yeh2, hyh-Shyuan Sheu2, YuhRenn Wu1,2
1
National Taiwan University, Taiwan, 2 Industrial Technology Research Institute, Taiwan

MoP-ED-8 （Poster）

Study of dielectric and passivation in buffer-free microwave GaN-on-SiC HEMT
Amit Bansal1, Rijo Baby1, Aniruddhan Gowrisankar1, Sai Charan Vanjari1, Anirudh Venugopalarao1, R
Muralidharan1, Hareesh Chandrasekar2, Srinivasan Raghavan1, Digbijoy Nath1
1
Indian Institute of Science, Bangalore, India, 2 Agnit Semiconductors Private Limited, India

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-ED-9 （Poster）

Gate leakage mechanisms depending on high temperatures in AlN/GaN HEMTs
lingjie qin1, jiejie zhu1, siyu liu1, jingshu guo1, bowen zhang1, yuxi zhou1
1
Xidian University , China

MoP-ED-10 （Poster）

RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based
HEMT buffer stacks
Zidong Cai1, Xuelin Yang1, Hongcai Yang1, Bo Shen1
1
Peking University, China

MoP-ED-11 （Poster）

p-GaN/p-AlGaN/AlGaN/GaN heterojunction field-effect transistor
DongGuk Kim1, MinKuen Lee1, MinGi Jeong1, HoYoung Cha1
1
Hongik University, Korea

MoP-ED-12 （Poster）

AlGaN/GaN/AlGaN HEMTs with high vertical breakdown voltage on patternedsilicon substrate
Reda Elwaradi2, Julien Bassaler3, Eric Frayssinet1, Sébastien Chenot1, Yohan Bouyer1, Maud Nemoz1,
Julien Pernot3, Philippe Ferrandis3, Yvon Cordier1
1Univ. Côte d'Azur, CNRS, CRHEA, France, 2 STMicroelectronics, France, 3 Univ. Grenoble Alpes, CNRS,
Grenoble INP, Institut Néel, France

MoP-ED-13 （Poster）

P-GaN cap E-mode GaN HEMTs Fabricated Through Acceptor De-activation by
PECVD NH3 Plasma
Zhaofeng Wang1,2, Jin Li2, Zhihong Liu1,2, Mei Xu1, Weichuan Xing1, Xiaojin Chen1,2, Weihang Zhang1,
Shenglei Zhao1,2, Xiangdong Li1, Jincheng Zhang1,2, Yue Hao1,2
1Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China, 2 State Key Discipline
Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi’an 710071, China

MoP-ED-14 （Poster）

Thermal Characteristics of E-mode AlGaN/GaN HEMTs on QST Substrate
Yue-ming Hsin1, Hao-Hsuan Lo1, Wei-Chia Chen1
1
National Central University, Taiwan

MoP-ED-15 （Poster）

Effects of substrate termination and negative gate bias on dynamic R on under highdrain reverse bias stress in GaN E-mode HEMTs
Nan Sun1, Huolin Huang1, Kaiming Ma1, Yanhong Liu1, Jianxun Dai1
1
Dalian University Technology, China

MoP-ED-16 （Poster）

Optimizing Buffer Layer for High Voltage GaN HEMTs Grown on Si
Yeng-Fong Lu1
10978683003, Taiwan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-ED-17 （Poster）

Dynamic RON degradation in Recessed-gate GaN MIS-HEMTs with Different Gate
Field Plate Lengths
ye liang1,2, Xiuyuan He1,2, Xi Feng1,2, Yuanlei Zhang1,2, Wen Liu1,2
1
Xi’an Jiaotong-Liverpool University, China, 2 University of Liverpool, UK

MoP-ED-18 （Poster）

A Normally-off AlGaN/GaN HEMT with PGaN LDD technology for Enhanced
Breakdown
Xinyue Dai1,2, Qimeng Jiang1,2, Sen Huang1,2, Baikui Li3, Xinhua Wang1,2, Jie Fan1, Xinyu Liu1,2
1
Institute of Microelectronics, Chinese Academy of Sciences, China, 2 University of Chinese Academy of
Sciences, China, 3 Shenzhen University, China

MoP-ED-19 （Poster）

NiOx-based Positive Vth GaN HEMTs for Power Electronic Applications
Mahalaxmi Patil1, Bhanu B Upadhyay1, Arpit Sahu1, Jyoti Sahu1, Subhajit Basak1, Swaroop Ganguly1,
Dipankar Saha1
1
Department of Electrical Engineering, IIT Bombay, India

MoP-ED-20 （Poster）

Influence of Al fraction, gate stack, and temperature on gate leakage mechanisms in
AlGaN channel high electron mobility transistors
Julien Bassaler1, Jash Mehta2, Leszek Konczewicz3,4, Sandrine Juillaguet3, Sylvie Contreras3, Maud
Nemoz5, Sebastian Tamariz5, Stéphanie Rennesson6, Fabrice Semond5, Yvon Cordier5, Julien Pernot1, Farid
Medjdoub2, Philippe Ferrandis1
1
Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France, 2 IEMN, CNRS,
Université de Lille, 59650 Villeneuve d'Ascq, France, 3 Laboratoire Charles Coulomb, UMR 221, Univ
Montpellier, CNRS, Montpellier, France, 4 Institute of High Pressure Physics, Polish Academy of Sciences,
Warsaw, 01-142, Poland, 5 Université Côte d'Azur, CNRS, CRHEA, rue Bernard Grégory, 06560 Valbonne,
France, 6 EasyGAN SAS, Rue Bernard Grégory, 06905 Sophia Antipolis Cedex, France

MoP-ED-21 （Poster）

Topology Optimization of Junction Termination Extension in Vertical GaN Power
DeviceTakuma Yamaguchi1, Katsuya Nomura1, Yoshiyuki Hattori2
1
Kwansei Gakuin University, Japan, 2 Daido University, Japan

MoP-ED-22 （Poster）

The Influence of the p-GaN Body Doping Concentration on Performance ofRegrown Channel GaN-Based Quasi-Vertical MOSFETs
Mengdi Li1, Jiejie Zhu1, Peng Zhang1, Qingyuan Chang1, Bin Hou1, Ling Yang1, Xiaohua Ma1
1
Xidian University, China

MoP-ED-23 （Poster）

Improvement of GaN p-n Diode Characteristics by Interface Treatment in
HVPE/MOVPE Hybrid Growth
Hiroshi Ohta1, Hajime Fujikura2, Yoshinobu Narita2, Tomoyoshi Mishima1
1
Hosei University, Japan, 2 Sumitomo Chemical Co., Ltd., Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-ED-24 （Poster）

Optimization of a sputtered-SiO2 passivation layer of p-n diodes for GaN verticalpower devices
Jiun Oh1, Tae Kyoung Kim1, Hyeondong Lee1, Minji Kim1, Abu Bashar Mohammad Hamidul Islam1,
Hyeon-Cheol Kim2, Taehoon Jang3, Jongseob Kim4, Joon Seop Kwak1, Jaehee Cho2
1
Korea Institute of Energy Technology, Korea, 2 Jeonbuk National University, Korea, 3 Sigetronics, Inc,
Korea, 4 Samsung Electronics, Korea

MoP-ED-25 （Poster）

Structural Optimization of GaN Vertical PN Diode Incorporating Trench MIS Field
Plate
Sung-Hoon Lee1, Jeongjin Kim1, Chol Ho Kwak2, Ho-Young Cha1,2
1
Hongik University, Korea, 2ChipsK, Korea

MoP-ED-26 （Poster）

GaN p-i-n Diodes Homoepitaxially Grown on 2 and 4-inch GaN Substrates
Rachid Driad1, Stefan Müller1, Heiko Czap1, Lutz Kirste1, Patrick Waltereit1, Michael Mikulla1
1
Fraunhofer - IAF, Germany

MoP-ED-27 （Poster）

High-Speed Analog-controlled Synchronous Rectification Circuit using Normallyon/off GaN-HEMTs
Toshihide Ide1,2, Mitsuaki Shimizu2, Noriyuki Takada2
1
AIST-NU GaN Advanced Device Open Innovation Laboratory (GaN-OIL), National Institute of Advanced
Industrial Science and Technology (AIST), Japan, 2 Research Institute for Advanced Electronics andPhotonics (RIAEP), National Institute of Advanced Industrial Science and Technology (AIST), Japan

MoP-ED-28 （Poster）

A Monolithically Integrated GaN E/E-mode GaN Inverter with High-Temperature
Degradation ResistanceFangqing Li1,2, Yaozong Zhong2, Xin Chen2, Qian Sun1,2, Hui Yang1,2
1
University of Science and Technology of China, China, 2 Suzhou Institute of Nano-tech and Nano-Bionics
Chinese Academy of Sciences, China

MoP-ED-29 （Poster）

Fluorine-based low damage selective etching process for p-GaN/AlGaN/GaN HFET
fabrication
Hyeon-Ji Kim1, Jun-Hyeok Yim1, You-Jin Shin1, Min-Jeoung Kim1, Dong-Ik Oh1, Ho-Young Cha1
1
Hongik university, Korea

MoP-ED-30 （Poster）

Optimization of Ohmic Contact on N-Face GaN for Vertical Power Devices
Hala El Rammouz1, Mohamed Reda Irekti1, Helge Haas1, Matthew Charles1
1
Univ.Grenoble Alpes,CEA,Leti F 38000 Grenoble, France

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-ED-31 （Poster）

Control of ± 0.5 nm AlGaN barrier depth repeatability and realisation of 3.4 V TH
and 830 V of breakdown voltage gate recessed AlGaN/GaN MIS-HEMT by atomic
layer etch process with in-situ etch depth monitoring
Sungjin Cho1, Matthew Loveday1, Andrew Newton1, David Cornwell2, Marcello Binetti2, Thomas Zettler2,
Hsin-Chu Chen3, Li-Heng Lee3, Po-Tsung Tu3, Po-Chun Yeh3
1
Oxford Instruments Plasma Technology, UK, 2 LayTec AG, Germany, 3 Industrial Technology ResearchInstitute, Taiwan

MoP-ED-32 （Poster）

Epitaxial boron nitride - processing and membrane fabrication
Jakub Jan Rogoża1, Johannes Binder1, Aleksandra Krystyna Dąbrowska1, Rafał Bożek1, Katarzyna
Ludwiczak1, Roman Stępniewski1, Andrzej Wysmołek1
1
University of Warsaw, Faculty of Physics, Poland

MoP-ED-33 （Poster）

Analysis of Ohmic Contact Formation to High Aluminum Content AlxSc1-xN/GaN
Heterostructures
Peter D.B. Fischer1, Alexander Schmid1, Ali Yassine2, Isabel Streicher3, Stefano Leone3, Oliver Ambacher2,
Johannes Heitmann11Institute of Applied Physics, TU Bergakademie Freiberg, Germany, 2 Department of Sustainable Systems
Engineering, University of Freiburg, Germany, 3 Institute for Applied Solid State Physics, Freiburg,
Germany

MoP-ED-34 （Poster）

Low resistivity Ti/Al/TiN/Au ohmic contacts to Ga- and N-face n-GaN for verticalpower devices
Oskar Artur Sadowski1,2, Maciej Kamiński1,2, Andrzej Taube1, Jarosław Tarenko1,2, Marek Guziewicz1,
Marek Wzorek1, Anna Szerling1, Paweł Prystawko3, Michał Boćkowski3, Izabella Grzegory3
1Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Poland, 2 Warsaw Universityof Technology, Institute of Microelectronics and Optoelectronics, Poland, 3 Institute of High Pressure
Physics,Polish Academy of Sciences, Poland

MoP-ED-35 （Poster）

Etch damage mitigation with combination dry and novel wet etching for GaN
regrowth and gate recess
Gillian K. Micale1, Joshua A. Perozek1, Qingyun Xie1, John Niroula1, Hridibrata Pal1, Pradyot Yadav1, PaoChuan Shih1, Tomás Palacios1
1
Microsystems Technology Laboratories, Massachusetts Institute of Technology, United States of America

MoP-ED-36 （Poster）

Formation of In/Au low-temperature contact for vertical superjunction GaN devices
with laser-activated p-GaN region
Maria Emma Villamin1, Naotaka Iwata1
1
Toyota Technological Institute, Japan

MoP-GR-LN1 （Poster）

Investigation of Ga Localization in AlGaN Growth with Step-Bunching at ultra-hightemprature MOVPE growth
Koki Fujii1, Atsushi Tomita1, Yuto Matsubara1, Yusuke Takashima1,2, Yoshiki Naoi1,2, Kentaro Nagamatsu1,21Tokushima Univercity, Japan, 2 Institute of Post-LED Photonics, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

MoP-GR-LN3 （Poster）

Ultra-small size (1–20 μm) InGaN red micro-LEDs based on GaN substrates
Luming Yu1, Lai Wang1,2, Zhibiao Hao1,2, Yi Luo1,2, Changzheng Sun1,2, Bing Xiong1,2, Yanjun Han1,2, Jian
Wang1,2, Hongtao Li1,2, Lin Gan1,2
1
Beijing National Research Center for Information Science and Technology, Department of Electronic
Engineering, Tsinghua University, China, 2 Key Laboratory for Renewable Energy, Beijing Key Laboratory
for New Energy Materialsand Devices, National Laboratory for Condensed Matter Physics, Institute ofPhysics, Chinese Academy of Science, China

MoP-CH-LN1 （Poster）

Enhancement of Single-Photon Purity of InGaN Single Quantum Dot by Adopting
Quasi-Resonant Excitation
Seongmoon Jun1, Minho Choi1, Baul Kim1, Martina Morassi2, Maria Tchernycheva2, HyunGyu Song1,
Hwan-Seop Yeo1, Noelle Gogneau2, Yong-Hoon Cho11
Korea Advanced Institute of Science and Technology, Korea, 2 Paris-Saclay University, France

MoP-CH-LN2 （Poster）

Energy upconversion in core/shell nanowire heterostructures based on dilute nitride
alloysMattias Jansson1, Fumitaro Ishikawa2, Weimin Chen1, Irina Buyanova1
1
Linköping University, Sweden, 2 Hokkaido University, Japan

MoP-CH-LN3 （Poster）

Nitrogen isotope effects on hexagonal boron nitride
Juliette Plo1, Adrien Rousseau1, Pierre Valvin1, Vincent Jacques1, Bernard Gil1, Guillaume Cassabois1, Eli
Janzen2, H Schutte2, James H Edgar2
1
Laboratoire Charles Coulomb, UMR 5221 CNRS-Univ de Montpellier , France, 2 Kansas Sate University,
Tim Taylor Department of Chemical Engineering, United States of America

MoP-OD-LN1 （Poster）

Thermal characteristics and a novel packaging design of GaN-based VCSEL with acurved mirror
Xiner Chen1, Huanqing Chen1, Shukun Li1, Menglai Lei1, Guo Yu1, Xiaodong Hu1
1
Peking University, China

MoP-OD-LN2 （Poster）

High-efficiency GaInN-based photovoltaic cells on free-standing GaN substrate for
optical wireless power transmission system
Takahiro Fujisawa1, Nan Hu1, Tomoki Kojima1, Takashi Egawa1, Makoto Miyoshi1
1Nagoya Institute of Technology , Japan

MoP-OD-LN3 （Poster）

Improve 248 nm solar blind property by nonplanar structure Metal-SemiconductorMetal UV Photodetector with Al0.5Ga0.5N/AlN Superlattice Absorption Layer
Tong-Wen Wang1, Jin-Rong Zhang2, Chia-Lung Tsai3, Cheng-Kai Xu4, Chia-Yu Chiu5, Jia-Hao Xu6, LiangWei Chen7
1
Feng Chia University, Taiwan, 2 Feng Chia University, Taiwan, 3 Chang Gung University, Taiwan, 4 Chang
Gung University, Taiwan, 5 Chang Gung University, Taiwan, 6 Feng Chia University, Taiwan, 7 Feng Chia
University, Taiwan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

November 14(Tue)

Poster Session II
Argos A-C

November 14 (Tue) 16:45 -18:35

TuP-GR-1 （Poster）

Elastic and Plastic Properties of Bulk Single Crystal AlN at Elevated Temperatures
Shingo Ishii1, Masato Toita1, Sho Sugiyama1, Jun Yoshida1, Toru Kimura1, Masato Kobayashi1, James
Grandusky2, Robert T Bondokov2, Naohiro Kuze1
1
Asahi Kasei Corp., Japan, 2 Crystal IS, Inc., United States of America

TuP-GR-2 （Poster）

Highly Textured Mixed Sputtered/MOVPE AlN films on MoS2 seed layer
Berangere HYOT1, Amelie DUSSAIGNE1, Matthieu BERNARD1, Remy GASSILLOUD1, Stephane
CADOT1, Julien PATOUILLARD1,2, Frederic BARBIER1, Guillaume VEUX1, Nicolas BERNIER1,Frederic GIANESELLO2, Christine RAYNAUD1
1
CEA, Leti, France, 2 STMicroelectronics, France

TuP-GR-3 （Poster）

Oxygen reduction through specific surface area control of AlN powder for PVT-AlN
single crystal growth
ZeRen Wang1, XingYu Zhu1, QiYue Zhao1, JieJun Wu1, TongJun Yu1
1peking university School of Physics, China

TuP-GR-4 （Poster）

Improved AlN regrown layer via surface treatment based on high-temperatureannealing templates
Dadi Wang1,2, Zhibin Liu1,2, Yanan Guo1,2, Jianchang Yan1,2, Jinmin Li1,2, Junxi Wang1,2
1Research and Development Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academyof Sciences, China, 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese
Academy of Sciences, Beijing, China

TuP-GR-5 （Poster）

Graphene-Induced Strain Release and Dislocation Reduction of Single-Crystal AlN
Films in Remote Epitaxy
yuning wang1, yu xu1,2, bing cao3,4, ke xu1,2,5
1Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, China, 2 Suzhou Nanowin
Science and Technology Co., Ltd., China, 3 School of Optoelectronic Science and Engineering &Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, China, 4
Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern
Optical Technologies of Education Ministry of China, Soochow University, China, 5 Shenyang National
Laboratory for Materials Science, China

TuP-GR-6 （Poster）

An ab-initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces
Toru Akiyama1, Takahiro Kawamura1
1
Mie University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-GR-7 （Poster）

Cubic GaN epilayers grown by Remote Epitaxy on Graphene covered 3C-SiC(001)/Si(001) substrates
Mario Littmann1, Olga August2, Karsten Harnisch3, Thorsten Halle3, Frank Bertram2, Jürgen Christen2, Dirk
Reuter1, Donat J. As1
1
Paderborn University, Germany, 2 OvG Universität Magdeburg, Germany, 3 OvG Universität Magdeburg,
Germany

TuP-GR-8 （Poster）

Influence of Growth Conditions on Impurity Incorporation During Crystallizationof High Purity HVPE-GaN Layers
Tomasz Sochacki1, Piotr Jaroszynski1, Kacper Sierakowski1, Michal Fijalkowski1, Leszek Konczewicz1,
Malgorzata Iwinska1, Jan L Weyher1, Rafal Jakiela2, Michal Bockowski1,3
1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2 Institute of Physics, Polish
Academy of Sciences, Poland, 3 CIRFE, IMaSS, Nagoya University, Japan

TuP-GR-9 （Poster）

Crystallization of high-resistivity Zn-doped GaN monocrystal via hydride vapor
phase epitaxy
Takafumi Odani1, Kenji Iso1, Yuichi Oshima2, Hirotaka Ikeda1, Tae Mochizuki1, Satoru Izumisawa1
1
Mitsubishi Chemical Corporation, Japan, 2 National Institute for Materials Science, Japan

TuP-GR-11 （Poster）

GaN nanowires grown on Si by plasma-assisted molecular beam epitaxy usinggraphene as buffer
Yang Li1, Tron Arne Nilsen1, Gulzhan Baigarinova1, Dishiti Gupta1, Dingding Ren1, Bjørn Ove Fimland1,
Helge Weman1
1
Norwegian University of Science and Technology, Norway

TuP-GR-12 （Poster）

Influence of Carrier Concentration of GaN Substrate on Etch-pit Size of Dislocationin GaN Substrate
Bhavpreeta Pratap Charan1, Masayuki Imanishi1, Ricksen Tandryo1, Kosuke Murakami1, Shigeyoshi
Usami1, Mihoko Maruyama1, Masahi Yoshimura2, Yusuke Mori1
1
Graduate School of Engineering, Osaka University, Japan, 2 ILE, Osaka University, Japan

TuP-GR-13 （Poster）

GaN-based LED with boron nitride nanotubes as a heat sinking layer
TaeHoon Seo1, Chanyoung Ju1, Min Mo Koo1, Eun Mi Kim1, Jongho Lee1
1
Korea Institute of Industrial and Technology, Korea

TuP-GR-14 （Poster）

Growth temperature dependence of lattice relaxation process in RF-MBE growth of
GaInN with insertion of GaInN buffer layer on GaN
Jo Takeuchi1, Takuo Sasaki2, Go Okuma1, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1,
Yasushi Nanishi3
1
Kogakuin University, Japan, 2 QST, Japan, 3 Ritsumeikan University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-GR-15 （Poster）

Vapor Phase Mass Transport of InGaN by Gap Face-to-Face Annealing withAmmonia
Atsuto Nakata1, Ayano Sasaki1, Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1
1
Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ., Japan

TuP-GR-16 （Poster）

Growth of Long Wavelength InGaN/GaN Multiple-Quantum-Well Light Emitting
Diodes with Pre-strained InGaN Layers
Lianshan Wang1,2, Yulin Meng1, Guijuan Zhao1, Weizhen Yao1, Shaoyan Yang1, Zhanguo Wang1
1
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China, 2 College of Materials
Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408,
China

TuP-GR-17 （Poster）

RF-MBE growth and characterization of InGaN thermoelectric thin film
Momoko Deura1, Shota Hattori2, Tsutomu Araki2
1
R-GIRO, Ritsumeikan University, Japan, 2 College of Science and Engneering, Ritsumeikan University,
Japan

TuP-GR-18 （Poster）

Temperature depended structural and optical changes in InGaN QWs
Ewa Grzanka1,2, Pawel P Michalowski3, Szymon Grzanka1,2, Roman Hrytsak1, Julita Smalc-Koziorowska1,2,
Artur Lachowski1, Mikolaj Grabowski1, Robert Czernecki1,2,Michal Leszczynski1,2
1Institute of High Pressure Physics Polish Academy of Sciences, Poland, 2 TOPGaN LTD, Poland, 3
Institute of Microelectronics and Photonics, Poland

TuP-GR-19 （Poster）

Fabrication of InGaN-based Red Light-Emitting Diodes via Trench Defects
pan zuojian1, chen zhizhong11Peking university, China

TuP-GR-20 （Poster）

Impact of nitrogen plasma treatment in plasma-assisted MOCVD grown InN filmon sapphire substrate
Takahiro Gotow1, Naoto Kumagai1, Tetsuji Shimizu1, Hisashi Yamada1, Toshihide Ide1, Tatsuro Maeda1
1National Institute of Advanced Industrial Science and Technology (AIST), Japan

TuP-GR-21 （Poster）

RF-MBE growth of InAlN thermoelectric thin film
Shota Hattori1, Tsutomu Araki1, Momoko Deura2
1Col. of Sci. & Eng., Ritsumeikan University, Japan, 2R-GIRO, Ritsumeikan University, Japan

TuP-GR-22 （Poster）

Growth model for predicting InGaN growth by MOVPE
Matthew Charles1, Simona Torrengo1, Matthieu Lafossas1
1
CEA-LETI, France

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-GR-23 （Poster）

Broadband emission from semipolar InGaN quantum wells on GaN microlens
structures
Shogo Fukushige1, Yoshinobu Matsuda1, Mitsuru Funato1, Yoichi Kawakami1
1
Kyoto University, Japan

TuP-GR-24 （Poster）

MOVPE of high-quality GaN on Al-pretreated sapphire substrates without using
low-temperature buffer layers
Kodai Takemura1, Takato Fukui1, Yoshinobu Matsuda1, Mitsuru Funato1, Yoichi Kawakami1
1
Kyoto University, Japan

TuP-GR-25 （Poster）

Growth mechanism of N-polar Ga Non vicinal N-polar AlN templates in MOVPE
Minagi Miyamoto1, Kouki Hanasaku1, Taketo Kowaki1, Daisuke Inahara1, Aina Hiyama Zazuli1, Kai Fujii1,
Taisei Kimoto1, Ryosuke Ninoki1, Satoshi Kurai1,Narihito Okada1, Yoichi Yamada1
1
Grad.School of Sci. & Tech. for Innovation, Yamaguchi Univ., Japan

TuP-GR-26 （Poster）

Fabrication and evaluation of BGaN neutron detectors using Si and QST substrate
Shun Nishikawa1, Yusaku Hashimoto1, Seiya Kawasaki2, Genichiro Wakabayashi3, Yoshio Honda2, Hiroshi
Amano2, Norikazu Ito4, Taketoshi Tanaka4, Ken Nakahara4, Yoku Inoue1, Toru Aoki1, Takayuki Nakano1
1
Shizuoka University, Japan, 2 Nagoya University, Japan, 3 Kindai University, Japan, 4 ROHM Co., LTD.,Japan

TuP-GR-27 （Poster）

Realization of InGaN-based red LEDs on 8-inch Silicon Substrates
Bumjoon Kim1, Soo Min Lee1, Frank Ramos1, Drew Hanser1, Ajit Paranjpe1
1
Veeco Instruments Inc., United States of America

TuP-GR-28 （Poster）

Optimization of in-situ SiNx Grown on AlGaN/GaN HEMT by Metal-Organic
Chemical Vapor Deposition
Yao Chen1, Hao chen Zhang2, Zhe Huang1,2, Connie Kang1, Jia jun Kang1, Jason Hu1, Vincent Wang1, Hai
ding Sun2, Shi ping Guo1
1
Advanced Micro-Fabrication Equipment Inc., China, 2 University of Science and Technology of China,
China

TuP-GR-29 （Poster）

Time-of-flight mass spectrometry gas-phase reaction analysis of trimethylindium in
MOVPE
Daisuke Yahara1, Shugo Nitta2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4
1
Department of Electronics, Nagoya University, Japan, 2 Institute of Materials and Systems for
Sustainability, Nagoya University, Japan, 3 Deep Tech Serial Innovation Center, Nagoya University, Japan,
4
Institute for Advanced Research, Nagoya University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-GR-30 （Poster）

Low temperature in-situ MOCVD AlN as a gate dielectric for GaN on Si HEMT’s
Anirudh Venugopalarao1, Shantveer Kanta1, Aniruddhan Gowrishankar1, Hareesh Chandrashekar2,
Muralidharan Rengarajan1, Digbijoy N Nath1, Srinivasan Raghavan1
1
Indian Institute of Science, India, 2 Agnit semiconductors, India

TuP-GR-31 （Poster）

Theoretical analysis of TMI degradation pathway in InN MOVPE growth
Yuya Nagashima1, Hirotaka Watanabe2, Syugo Nitta2, Akira Kusaba3, Yoshihiro Kangawa3, Kenji
Shiraishi1,21Grad School of Eng., Nagoya Univ., Japan, 2 IMass, Nagoya Univ., Japan, 3 RIAM, Kyusyu Univ., Japan

TuP-GR-32 （Poster）

Effective removal of Si contamination at GaN regrowth interface by in situ TBCletching
Haoran Qie1,2, Yaozong Zhong1,2,3, Qian Sun1,2,3, Jianxun Liu1,2,3, Hongwei Gao1,2,3, Xunfei Wu1,2,3, Xiujian
Sun1,2, Hui Yang1,2,3
1
University of Science and Technology of China, China, 2 Suzhou Institute of Nano-Tech and Nano-Bionics,
Chinese Academy of Sciences, China, 3 Guangdong Institute of Semiconductor Micro-nano Manufacturing
Technology,China

TuP-GR-33 （Poster）

Non-radiative recombination centers in InGaN/GaN nanowires heterostructurestudied by statistical analysis using Cathodoluminescence and Scanning
Transmission Electron Microscopy
Anh My-Nhat QUACH1,2, Alexandre Concordel2, Névine Rochat3, Jean-Luc Rouvière4, Jérôme Napierala2,
Bruno Daudin1
1
Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, NPSC, 17 Rue des Martyrs, 38000 Grenoble, France,
France, 2 ALEDIA, 10 Rue des Méridiens, 38130 Échirolles, France, France, 3 Univ. Grenoble Alpes, CEA,
LETI, F-38000 Grenoble, France, France, 4 Univ. Grenoble Alpes, CEA, IRIG, MEM, LEMMA, 17 Rue desMartyrs, 38000 Grenoble, France, France

TuP-GR-34 （Poster）

Si-doped n-GaN sputtered at low temperature from a liquid target
Thomas Tschirky1, Marco Rechsteiner1, Dominik Jaeger1
1
Evatec AG, Switzerland

TuP-GR-35 （Poster）

InGaN/GaN Nanowire UV LEDs Grown by Plasma-Assisted Molecular Beam
Epitaxy
Subhranshu Sekhar Sahu1, Ajoy Biswas1, Soumyadip Chatterjee2, Suddhasatta Mahapatra1, Apurba Laha2
1
Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India, 2 Department ofElectrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India

TuP-GR-36 （Poster）

A path towards an all-PVD HEMT: GaN/AlN magnetron sputter epitaxy
Katrin Pingen1,2, Dominic Hecker1, Hagen Bartsch1, Elizabeth von Hauff1,2, Jens Birch3, Per Sandström3,
Ching-Lien Hsiao3, Alexander Martin Hinz1,21
Fraunhofer FEP, Germany, 2 IFE, Technische Universität Dresden, Germany, 3 IFM, Linköpings
universitet, Sweden

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-GR-37 （Poster）

Control of In content in InGaN on ScAlMgO4 substrates using RF-MBE
Yuta Kubo1, Yasuhiro Yamada1, Momoko Deura2, Takashi Fujii1, Tsutomu Araki1
1
Col. of Sci. & Eng., Ritsumeikan University, Japan, 2 R-GIRO, Ritsumeikan University, Japan

TuP-GR-38 （Poster）

Impact of In irradiation on RF-MBE growths of high Al content AlGaN films on AlN
templates
Ruka Nakamura1, Mahiro Hayasaki1, Tomoya Yamaguchi1, Tomohiro Yamaguchi1, Tohru Honda1,
Takeyoshi Onuma1
1
Kogakuin University, Japan

TuP-GR-39 （Poster）

Alternating metal-modulated Molecular Beam Epitaxy of cubic (Ga,In)N
Jörg Schörmann1, Mario Fabian Zscherp1, Silas Aurel Jentsch1, Nicolai Merlin Gimbel1, Marius Johannes
Müller1, Vitalii Lider2, Celina Becker2, Limei Chen1, Andreas Beyer2, Detlev Michael Hofmann1, Donat
Josef As3, Peter Jens Klar1, Kerstin Volz2, Sangam Chatterjee1
1
Justus Liebig University Giessen, Germany, 2 Philipps University Marburg, Germany, 3 University ofPaderborn, Germany

TuP-GR-40 （Poster）

GaAs/GaInNAs/GaAs Core-Multishell Nanowires with Multiple Quantum-Wells
Emitting at 1.2 μm for Telecommunications
Kaito Nakama1, Keisuke Minehisa1, Akio Higo2, Fumitaro Ishikawa1
1
Research Center for Integrated Quantum Electronics, Hokkaido University, Japan, 2 Systems Design Lab(d.lab), School of Engineering, The Univ. of Tokyo, Japan

TuP-GR-41 （Poster）

Development of NPN structures for Vertical GaN Trench-MOSFETs
Pawel Prystawko1, Ewa Grzanka1, Andrzej Taube2, Maciej Kaminski2
1
Institute of High Pressure Physics, Polish Academy of Sciences, Poland, 2 2Lukasiewicz Research Network- Institute of Microelectronics and Photonics, Poland

TuP-GR-42 （Poster）

Modeling and validation of carbon incorporation in GaN epitaxial growth by
MOVPE method
Yuji Mukaiyama1, Hirotaka Watanabe2, Shugo Nitta2, Masaya Iizuka1, Hiroshi Amano2
1
STR Japan K.K., Japan, 2 Nagoya University, Japan

TuP-GR-43 （Poster）

Dislocation density reduction for vertical GaN devices on 200 mm Si
Ziyao Gao1, Cengiz Kuruoglu1, Dirk Fahle1, Herwig Hahn1, Youssef Hamdaoui2, Idriss Abid2, Farid
Medjdoub2, Sven Besendörfer3, Elke Meißner3,4, MichaelHeuken1,5
1
AIXTRON SE, Germany, 2 Institute of Electronics, Microelectronics and Nanotechnology, France, 3Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany, 4 Chair of Electron
Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany, 5 Compound Semiconductor
Technology, RWTH Aachen University, Germany

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-GR-44 （Poster）

Effect of Threading Dislocations on the Diffusion of Implanted Donors andAcceptors in Gallium Nitride
Malgorzata Iwinska1, Kacper Sierakowski1, Piotr Jaroszynski1, Michal Bockowski1,2
1Institute of High Pressure Physics, Polish Academy of Sciences, Poland, 2 CIRFE, IMaSS, Nagoya
University, Japan

TuP-GR-45 （Poster）

MOCVD growth of highly Si doped GaN from triethylgallium
Michal Blaho1, Filip Gucmann1, Peter Eliáš1, Dagmar Gregušová1, Stanislav Hasenöhrl1, Jan Kuzmík1
1
Institute of Electrical Engineering, Slovak Academy of Sciences, Slovakia

TuP-CH-1 （Poster）

Influence of carrier localization on the emission of InGaN/GaN coupled quantum
wells
Huan Xu1, Xin Hou1, Ya-chao Wang1, Rong-bin Xu1, Yang Mei1, Bao-Ping Zhang1
1
Xiamen University, China

TuP-CH-2 （Poster）

Analysis of the sub-bandgap optical absorption processes in Al1-xInxN thin films
grown on a c-plane GaN/Sapphire template
Kouki Noda1, Yuto Murakami1, Hayata Toyoda1, Kana Shibata1, Daichi Imai1, Makoto Miyoshi2, Tetsuya
Takeuchi1, Takao Miyajima1
1
Meijo University , Japan, 2 Nagoya Institute of Technology, Japan

TuP-CH-3 （Poster）

Well-Number-Dependence of Internal Quantum Efficiency in AlGaN Quantum
Wells on Low-Dislocation Sputtered AlN Templates
Kosuke Inai1, Ryota Oshimura1, Kunio Himeno1, Megumi Fujii1, Yuta Onishi1, Satoshi Kurai1, Narihito
Okada1, Kenjiro Uesugi2, Hideto Miyake2, Yoichi Yamada1
1
Yamaguchi University, Japan, 2 Mie University, Japan

TuP-CH-4 （Poster）

Imbalance of left and right circulation lasing mode in GaN microdisk resonator
Atsushi Syouji1, Tetsuya Kouno2, Masaru Sakai1
1
University of Yamanashi, Japan, 2 Shizuoka University, Japan

TuP-CH-5 （Poster）

Defect characteristics of ammonothermally grown GaN substrates and effects on theperformance of test devices
Christian Röder1, Christian Miersch1, Marius H. Wetzel1, Kuei-Shen Hsu2, Alexander Schmid1,2, Jan Beyer2,
Lutz Kirste3, Franziska C. Beyer11
Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany, 2 TU Bergakademie
Freiberg, Institute of Applied Physics, Germany, 3 Fraunhofer Institute for Applied Solid State Physics IAF,
Germany

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-CH-6 （Poster）

Spectroscopic ellipsometry evaluation of damage and its recovery in Mg-implanted
GaN
Steffen Richter1, Vallery Stanishev2, Dat Tran2, Enrico Brusaterra4, Eldad Bahat-Treidel4, Frank Brunner4,
Stephane Morata3, Frank Torregrosa3, Vanya Darakchieva1,2
1
Lund university, Sweden, 2 Linköping university, Sweden, 3 IBS Ion Beam Service, France, 4 FerdinandBraun-Institut (FBH), Germany

TuP-CH-7 （Poster）

Structural and optical properties of cubic GaN films on high thermal-conductivity
substrates
Jaime A. Freitas1, James C. Culbertson1, David F. Storm1, Neeraj Nepal1, Nadeemullha A. Mahadik1
1Naval Research Laboratory, United States of America

TuP-CH-8 （Poster）

Saturated dynamic RON in GaN HEMTs: Role of Operation Modes
Yifei Huang1,2, Qimeng Jiang1,2, Sen Huang1,2, Xinhua Wang1,2, Xinyu Liu1,2
1
The Institute of Microelectronics of the Chinese Academy of Sciences, China, 2 University of Chinese
Academy of Sciences, China

TuP-CH-9 （Poster）

The observation of electron accumulation at N-polar face in n-type GaN induced by
the self-screening effect of polarization electric field
Zhenxing Liu1, Miao Zhang1, Qianshu Wu1, Jinwei Zhang1, Zhuoran Luo1, Yang Liu1
1
Sun Yat-Sen University, Guangzhou 510275, China

TuP-CH-10 （Poster）

Study of conduction properties and defect states of n-type AlGaN having AlN
content of 59–89% with various Si doping concentrations
Keita Kataoka1, Tetsuo Narita1, Yusuke Yagi1, Kengo Nagata2, Yoshiki Saito2
1
Toyota Central R&D Labs., Inc., Japan, 2 Toyoda Gosei Co., Ltd., Japan

TuP-CH-11 （Poster）

The role of surface and dissolved arsenic in GaN(0001) on electronic properties
Miłosz Grodzicki1,2, Dominika Majchrzak1, Paweł Kempisty3, Wojciech Olszewski1, Damian Pucicki1,
Robert Kudrawiec1,2, Detlef Hommel1,41Łukasiewicz Research Network – PORT Polish Center for Technology Development, Wrocław, Poland ,Poland, 2 Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems ofTechnology, Wrocław University ofScience and Technology, Wrocław, Poland, Poland, 3 Crystal Growth
Laboratory Institute of High Pressure Physics Polish Academy of Sciences, Warsaw, Poland, Poland, 4Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wrocław, Poland,
PolandTuP-CH-12 （Poster）

Carrier density and mobility of nitride semiconductors determined by Raman
scattering: achievements and limitations
Jesús Ortiga-Fibla1, Núria Garro1, Frank Brunner2, Eldad Bahat Treidel2, Oliver Hilt2, Ana Cros1
1
University of Valencia (ICMUV), Spain, 2 Ferdinand-Braun-Institut (FBH), Germany

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-CH-13 （Poster）

Relative Permittivity Engineering through Amorphous Silicon Nitride PECVD
Process Variations for MMIC Applications
Arthur Collier1, Wesley Sampson1, Abdalla Eblabla1, Arathy Varghese1, Paul Tasker1, Jash Patel2, Liang
Tian2, Huma Ashraf2, Khaled Elgaid1
1Cardiff University, UK, 2 KLA (SPTS Division), UK

TuP-CH-14 （Poster）

Application of the graded AlGaN:Mg layer to obtain low resistivity ohmic contact indeep UV emitters
Dominika Majchrzak1,2, Lan Maria Tran2, Michał Babij2, Katarzyna Opołczynska1,3, Wojciech Olszewski1,3,
Jarosław Serafinczuk1,4, Detlef Hommel1,21Łukasiewicz Research Network - PORT Polish Center for Technology Development, Poland, 2 Institute of
Low Temperature and Structure Research, Polish Academy of Sciences, Poland, 3 Institute of Experimental
Physics, University of Wrocław, Poland, 4 Department of Nanometrology, Wroclaw University of Scienceand Technology, Poland

TuP-CH-15 （Poster）

Evaluation of Electrical Properties of Mg Ion-implanted GaN Single Crystals using
THz-TDSE
Dingding Wang1, Hayato Watanabe1, Takashi Fujii1,3, Momoko Deura2, Toshiyuki Iwamoto3, Atsushi
Suyama4, Hitoshi Kawanowa4, Tsutomu Araki1
1
Col. of Sci.&Eng.,Ritsumeikan University, Japan, 2 R-GIRO, Ritsumeikan University, Japan, 3 NIPPOPRECISION Co., Ltd., Japan, 4 Ion Technology Center Co., Ltd., Japan

TuP-CH-16 （Poster）

Gain measurements using Hakki-Paoli method
Szymon Stanczyk1,2, Anna Kafar1,2, Piotr Perlin1,2
1
Institute of High Pressure Physics PAS, Poland, 2 TopGaN Ltd, Poland

TuP-CH-17 （Poster）

Experimental Method of Quantifying the Carrier Dynamics in Active Quantum
Wells of Light-Emitting Diodes
Jong-In Shim1, Dong-Soo Shin1, Hyundon Jung2
1
Hanyang University ERICA, Korea, 2 EtaMax, Korea

TuP-CH-18 （Poster）

Extraction of transport properties of bulk GaN material in multi-layer epitaxial
structure
Qianshu Wu1, Jinwei Zhang1, Miao Zhang1, Zhuoran Luo1, Yang Liu1
1
Sun Yat-Sen University, China

TuP-CH-20 （Poster）

Vertical Current Transport in p-GaN/AlGaN structures
Jozef Osvald1
1
Institute of Electrical Engineering Slovak Academy of Sciencs, Slovakia

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-CH-21 （Poster）

High-pressure study of color centers emitting in 3.3–4 eV spectral region inhexagonal boron nitride
Agata Kaminska1,2,3, Kamil Koronski1, Nikolai D. Zhigadlo4,5, Christine Elias6, Guillaume Cassabois6,
Bernard Gil6
1
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668, Warsaw, Poland, 2
Faculty of Mathematics and Natural Sciences. School of Exact Sciences, Cardinal Stefan Wyszynski
University, Dewajtis 5, 01-815Warsaw, Poland, 3 Institute of High Pressure Physics, Polish Academy of
Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland, 4 Department of Chemistry and Biochemistry,
University of Bern, 3012, Bern, Switzerland, 5 CrysMat Company, 8046, Zurich, Switzerland, 6 Laboratoire
Charles Coulomb, UMR 5221, CNRS-Université de Montpellier, 34095, Montpellier, France

TuP-CH-22 （Poster）

Local environment-controlled activation of Si dopants in AlGaN
Igor Prozheev1, Frank Mehnke2, Marcel Schilling2, Tim Wernicke2, Michael Kneissl2, René Bès1, Ilja
Makkonen1, Filip Tuomisto1
1
University of Helsinki, Finland, 2 Technische Universität Berlin, Germany

TuP-CH-23 （Poster）

Interface Properties of p-type GaN MOS Structures Examined by Sub-BandgapLight-Assisted Capacitance–Voltage Measurement
Takahide Nukariya1, Yining Jiao1, Umi Takatsu1, Taketomo Sato1, Masamichi Akazawa1
1
Hokkaido University, Japan

TuP-CH-24 （Poster）

Electron Beam Irradiation Induced Deep Levels in AlN Characterized byHyperspectral Cathodoluminescence Spectroscopy
Rafael Dalmau1, Samuel Kirby1, Jeffrey Britt1, Mike Salmon2, Raoul Schlesser1
1
HexaTech, Inc., United States of America, 2 EAG Laboratories, Eurofins Materials Science, United Statesof America

TuP-CH-26 （Poster）

Trap analysis in an Al0.60Ga0.40N channel heterostructure grown on a Si (111)substrate
Julien Bassaler1, Jash Mehta2, Leszek Konczewicz3,4, Sandrine Juillaguet3, Sylvie Contreras3, Maud
Nemoz5, Sebastian Tamariz5, Stéphanie Rennesson6, Fabrice Semond5, Yvon Cordier5, Julien Pernot1, Farid
Medjdoub2, Philippe Ferrandis1
1
Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France, 2 IEMN, CNRS,
Université de Lille, 59650 Villeneuve d'Ascq, , France, 3 Laboratoire Charles Coulomb, UMR 221, Univ
Montpellier, CNRS,Montpellier, France, 4 Institute of High Pressure Physics, Polish Academy of Sciences,
Warsaw, 01-142, Poland, 5 Université Côte d'Azur, CNRS, CRHEA, rue Bernard Grégory, 06560 Valbonne,
France, 6 EasyGAN SAS, Rue Bernard Grégory, 06905 Sophia Antipolis Cedex, France

TuP-CH-27 （Poster）

Deep-Level Trap States Characterization of Commercial p-GaN Schottky Gate
AlGaN/GaN HEMTs by Deep-Level Transient Spectroscopy
Xiaohu Wang1, Xuefeng Zheng1, Danmei Lin1, Xiaohua Ma1, Yue Hao1
1
Xidian University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-CH-28 （Poster）

First-Principles Calculated Electronic Properties of InGaMgN Alloys for
Optoelectronic Applications
Iulian Gherasoiu1, Kin Man Yu2, Wladek Walukiewicz3
1
SUNY Polytechnic Institute, United States of America, 2 City University of Hong Kong, China, 3 Lawrence
Berkeley National Laboratory, United States of America

TuP-CH-29 （Poster）

Adiabatic potential for conformational change of VGa-VN complex defects in GaN
Jota Nakamura1, Masato Oda1,2, Yoshihiro Kangawa2
1
Wakayama-University, Japan, 2 Kyushu-University, Japan

TuP-CH-30 （Poster）

Mechanical property and deformation mechanism of GaN materials with Indiumdoping by molecular dynamics simulation
Li Tian kun1, Shang Fu lin1
1
Xi'an Jiaotong University, China

TuP-CH-31 （Poster）

Surface oxidization of GaN(0001) simulated by charge-transfer type molecular
dynamics
Yuki Ohuchi1, Hidenori Saeki1, Hiroki Sakakima2, Satoshi Izumi2
1
Fuji Electric Co., Ltd., Japan, 2 University of Tokyo, Japan

TuP-CH-32 （Poster）

Thermal Effect on the Photoluminescence of InGaN/AlGaN Multiple Quantum
Wells
Ya-Fen Wu1, Yung-Yao Chen1, Hau-Yu Chai1
1
Department of Electronic Engineering, Ming Chi University of Technology, Taiwan

TuP-CH-33 （Poster）

Accessible Chemical Space for Metal Nitride Perovskites
Bastien Francesco Grosso1,2, Daniel W. Davies1, Bonan Zhu1, Aron Walsh3, David O. Scanlon1,2
1
University College London, UK, 2 University of Birmingham, UK, 3 Imperial College London, UK

TuP-CH-34 （Poster）

Tuning GaN/AlGaN quantum well emission by deposition of Few-Layed Grapheneand Nickel/Gold films.
Christelle Brimont1, Rémi Aristegui1, Pierre Lefebvre11, Thierry Guillet1, Masha Vladimirova1, Ioannis
Paradisanos2, Cédric Robert2, Xavier Marie2, Bernhard Urbaszek2, Sébastien Chenot3, Yvon Cordier3,
Benjamin Damilano3
1
Laboratoire Charles Coulomb (L2C), Université de Montpellier, CNRS, Montpellier, France, 2 LPCNO,
Université de Toulouse, INSA-CNRS-UPS, Toulouse, France, 3 CRHEA, Université Côte d’Azur, CNRS,
Valbonne, France

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-OD-1 （Poster）

Carrier dynamics and structural properties of hybrid orange-red LED based on Inrich InGaN/GaN multiple quantum wells
Hadeel A. Alamoudi1, Nuaman M. Kutty 1, Fatimah Alreshidi1, Kishor Upadhyaya1, Daisuke Iida2,
Kazuhiro Ohkawa2, Iman S. Roqan1
1
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology(KAUST), Thuwal 23955-6900, Saudi Arabia, Saudi Arabia, 2 2Computer, Electrical and Mathematical
Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology(KAUST), Thuwal 23955-6900, Saudi Arabia, Saudi Arabia

TuP-OD-2 （Poster）

Evaluating Nanorod LED Assembly for Display Applications Using High-Resolution
Optical Inspection
Quang Trung Le1, Byeong-U Bak1, Youngwook Shin1, Jun Seok Hwang1, Jaekyun Kim1
1
Hanyang University, Korea

TuP-OD-3 （Poster）

Bright red emission and small peak shift in InGaN multiple quantum well structurewith low indium contents through tunneling injection and barrier recombination
Jae-Sun Kim1, Jung-Hoon Song1,3, Jae-Sang Kang1, Gyeong-Eun Choi1, Jung-Ki Park1, Gyu-Hwi Jeong1,
Sung-Min Hwang2, In-Sung Jo2, Won-Taek Lim2, Seung-Young Lim3
1
Kongju National University, Korea, 2 Soft-EPi, Korea, 3 AccuOptotech, Korea

TuP-OD-4 （Poster）

Electrical Characterization of Micro LEDs on Semipolar GaN Substrates and ELO
Wings
Srinivas Gandrothula1,2, Mathew Wong1, Stephen Gee1, Nathen Palmquist1, Feng Wu1, Shuji Nakamura1,
Steven P DenBaars1
1
University of California Santa Barbara, United States of America, 2 Sanoh Industrial Co., Ltd, Japan

TuP-OD-5 （Poster）

Self-aligned microLED processing and its impact on device performance
Georg Schöttler1,2, Steffen Bornemann1,2, Maximilian Vergin1,2, Florian Meierhofer1,2, Jana Hartmann1,2,
Mayra Garcés-Schröder1,2, Andreas Waag1,21Institute of Semiconductor Technology, Technische Universität Braunschweig, Germany, 2 Laboratory for
Emerging Nanometrology, Technische Universität Braunschweig , Germany

TuP-OD-6 （Poster）

A comprehensive study of pyramidal micro light emitting diodes obtained by
selective area growth
Yao Chen1, Jean-François Carlin1, Nicolas Grandjean1
1École Polytechnique Fédérale de Lausanne (EPFL), Switzerland

TuP-OD-7 （Poster）

Current-Induced Stress Effect in GaN-Based Micro-LEDs with Different Distances
between the p-Contact and the Mesa EdgeA B M Hamidul Islam1, Tae Kyoung Kim1, Yu-Jung Cha1, Jae Won Seo1, Jiun Oh1, Minji Kim1, Hyeondong
Lee1, Dong-Soo Shin2, Jong-In Shim2, Joon Seop Kwak1
1
Korea Institute of Energy Technology, Korea, 2 Hanyang University, Korea

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-OD-8 （Poster）

Study on the Size-dependent Effect and Reducing Sidewall Leakage of InGaN Red
Micro-LEDs
Shuhan Zhang1, Qian Fan1, Xianfeng Ni1, Li Tao1, Xing Gu1
1
Institute of Next Generation Semiconductor Materials, Southeast University, China

TuP-OD-9 （Poster）

Monolithic integration of GaN-based green micro-LED and quasi-vertical MOSFET
utilizing a hybrid tunnel junction
Yimeng Sang1, Zhe Zhuang2, Feifan Xu1, Tao Tao1, Rong Zhang1,3, Bin Liu1
1
School of Electronic Science and Engineering, Nanjing University, China, 2 School of Integrated Circuits,
Nanjing University, China, 3 Xiamen University, China

TuP-OD-10 （Poster）

Development of High-Power Single-Chip UVC-LED Devices
Yoshiki Wada1, Hiroshi Chiba1, Yuji Karakane1, Shunsuke Matsuno1
1
Asahi Kasei Corporation, Japan

TuP-OD-11 （Poster）

Optical properties of AlGaN multiple quantum wells grown on different AlN/4H-SiC
templates
Ruijie Zhang1,2, Yanan Guo1,2, Zhibin Liu1,2, Jianchang Yan1,2, Jinmin Li1,2, Junxi Wang1,21Institute of Semiconductors, Chinese Academy of Sciences, China, 2 University of Chinese Academy of
Sciences, China

TuP-OD-12 （Poster）

Beam collimation and light extraction efficiency enhancement for deep-ultraviolet
micro-LEDs with Fresnel zone plate nano-diffraction patterns
LINGJIE WEI1, SHIN-ICHIRO INOUE1
1National Institute of Information and Communications Technology (NICT), Japan

TuP-OD-13 （Poster）

Estimation of Junction Temperature in 227nm Far-UVC and UVB LED
Muhammad Ajmal Khan1, Pablo Fredes2, Ulrich Raff3, Ernesto Gramsch3, Hideki Hirayama1
1
Riken Cluster for Pioneering Research, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan, 2 Hydraluvx Spa,
Minerva 2576, Maipu, 9254013, Santiago, Chile, 3 Department of Physics, University of Santiago ofChile,
Av. Ecuador 3493, 9170124, Santiago, Chile

TuP-OD-15 （Poster）

Efficiency Increase in 230 nm AlGaN far-UVC LED by Changing Quantum Well
Structure
Yuya Nagata1,2, Fumiya Chugenji1,2, Noritoshi Maeda1, Ajmal Khan1, Sachie Fujikawa2,1, Hiroyuki
Yaguchi2, Yasushi Iwaisako3, Hideki Hirayama1
1
RIKEN, Japan, 2 Saitama University, Japan, 3 Nippon Tungsten, Japan

TuP-OD-16 （Poster）

Study on p- and n-type doping of Al-rich AlGaN
Jiaming Wang1, Fujun Xu1,2, Lisheng Zhang1,2, Jing Lang1, Xiangning Kang1,2, Zhixin Qin1,2, Xinqiang
Wang1, Weikun Ge1, Bo Shen1,2
1
Peking University, China, 2 Beijing SinoGaN Semiconductor Technology Co., Ltd., China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-OD-17 （Poster）

Improved Optical-Electrical-Solar Blind Communication Performance of AlGaNBased UV Micro-LED by Optimizing Ohmic Contact of the New Alloy p-Electrode
Xuejiao Sun1, Chunhui Guo2, Bing Wang1,2, Jianchang Yan1,2, Jinmin Li1,2, Naixin Liu1,2
1
Institute of Semiconductors,CAS, China, 2 Shanxi Zhongke Lu’an Ultraviolet Optoelectronics Technology
Co., Ltd. Shanxi, China

TuP-OD-18 （Poster）

Electrical properties of Mg-doped Al0.35Ga0.65N contact/graded AlGaN layer
Hayata Takahata1, Tomoaki Kachi1, Maho Fujita1, Naoki Hamashima1, Ryunosuke Oka1, Hisanori Ishiguro1,
Tetsuya Tackeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Yoshiki Saito2, Koji Okuno2
1
Meijo university, Japan, 2 TOYODA GOSEI Co.,Ltd., Japan

TuP-OD-19 （Poster）

Room-temperature optical gain of terahertz quantum cascade lasers based on
GaN/AlGaN, ZnO/MgZnO materials
Li Wang1, Mingxi Chen1, Tsung-Tse Lin1, Ke Wang1,2, Hideki Hirayama1
1
RIKEN, Japan, 2 Nanjing university, China

TuP-OD-20 （Poster）

Development of needle-shaped MicroLED/Microfluidic device for optogenetic
stimulation and drug delivery
Kakeru Oya1, Gota Shinohara1, Hibiki Takeuchi1, Shogo Okada1, Atsushi Nishikawa2, Alexander Loesing2,
Mikiko Ishikawa3, Nobuyuki Kai3, Noriaki Ohwaka3,Hiroto Sekiguchi1
1
Toyohashi University of Technology, Japan, 2 ALLOS, Germany, 3 Dokkyo Medical University, Japan

TuP-OD-22 （Poster）

Widening emission spectrum of nitride superluminescent diodes. Selected
approaches to the active region.
Grzegorz Staszczak1, Szymon Grzanka1,2, Łucja Marona1,2, Ewa Grzanka1,2, Julita Smalc-Koziorowska1,
Grzegorz Targowski1, Grzegorz Muzioł1, Anna Kafar1, Piotr Perlin1,2, Czesław Skierbiszewski1, Tadeusz
Suski11
Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw, Poland, 2 TopGaN Ltd, Sokolowska
29/37, 01-142 Warsaw, Poland

TuP-OD-23 （Poster）

Strain-Engineering of Electronic and Magnetic Properties of Chemical PassivatedZigzag GaN Nanoribbons: An Ab-initio Study
Vijay Kumar Gudelli1, Iman S Roqan1
1
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology,
Thuwal-23955-6900, Saudi Arabia

TuP-OD-24 （Poster）

Highly-Efficient Metalenses Composed of GaN Hexagonal Resonators
Ting Yu Wei1, Bo Wen Chen1, Meng Hsin Chen1
1
Department of Electrical Engineering, National United University, Taiwan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-OD-25 （Poster）

Insights into the emission characteristics of deep ultraviolet PCSELs by band
structure simulations
Lukas Uhlig1, Dogukan Apaydin2, Joachim Ciers2, Hjalmar Andersson2, Sarina Graupeter3, Giulia
Cardinali3, Tim Wernicke3, Michael Kneissl3,4, Philippe Tassin2, Ulrich Theodor Schwarz1, Åsa Haglund2
1
Chemnitz University of Technology, Germany, 2 Chalmers University of Technology, Sweden, 3 Technische
Universität Berlin, Institute of Solid State Physics, Germany, 4 Ferdinand-Braun-Institut (FBH), Germany

TuP-OD-26 （Poster）

Comparative Analysis of Gain in Wide and Thin Quantum Wells: Experimental
Investigation and Theoretical Modeling
Marta Gładysiewicz1, Robert Kudrawiec1, Grzegorz Muziol2, Henryk Turski2, Czeslaw Skierbiszewski2
1
Wroclaw University of Science and Technology, Poland, 2 Institute of High-Pressure Physics Polish
Academy of Sciences, Poland

TuP-OD-27 （Poster）

Resolving radiative and non-radiative processes in GaN/InGaN nano-disks throughtime-resolved photoluminescence and absorption measurements
Kanchan Singh Rana1, Navneet Kumar Thakur1, Ankit Udai1, Swaroop Ganguly1, Dipankar Saha1
1
Indian Institute of Technology Bombay, India

TuP-OD-28 （Poster）

Thermal Interaction between Exitons in III-Nitride Semiconductors
Aayami Kadono1, Masato Oda1
1
Wakayama University, Japan

TuP-OD-29 （Poster）

Carrier localization in III-nitrides versus conventional III-V semiconductors: a
study on the effects of alloy disorder using landscape theory and the Schrödinger
equation
Tsung-Yin Tsai1,2, Kai Shek Qwah2, Jean-Philippe Banon3, Marcel Filoche3, Claude Weisbuch3,2, Yuh-Renn
Wu2, James S Speck2
1
National Taiwan University, Taiwan, 2 University of California, Santa Barbara, United States of America,3
École Polytechnique, Paris, France

TuP-OD-30 （Poster）

A numerical study of UV AlGaN heterostructures with polarization doping
Konrad Sakowski1,2, Ashfaq Ahmad1, Pawel Strak1, Pawel Kempisty1, Yoshihiro Kangawa3, Jacek
Piechota1, Stanislaw Krukowski1
1
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw,
Poland, 2 Institute of Applied Mathematics and Mechanics, University of Warsaw, Banacha 2, 02-097
Warsaw, Poland, 3 Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 8168580, Japan

TuP-ED-1 （Poster）

Understanding of Dynamic On-resistance Improvement in Carbon Heavily Doping
AlGaN/GaN HEMTJinwei Zhang1, Qianshu Wu1, Yuhao Zhou1, Zhuoran Luo1, Miao Zhang1, Yang Liu1,2
1
Sun Yat-Sen University, China, 2 Sun Yat-Sen University Shenzhen Institute, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-ED-2 （Poster）

Simulation of i-GaN layer in normally-off AlGaN/GaN HEMTs with a P-I-N gate
structure
Mao Jia1, Bin Hou1, Ling Yang1, Xiaohua Ma1
1
Xidian University, China

TuP-ED-4 （Poster）

Lateral integration of WBG In2O3 NMOS inverter and GaN HEMT for powerelectronics
MRITUNJAY KUMAR1, Saravanan Yuvaraja1, Na Xiao1, Manoj Kumar Rajbhar1, Ganesh Mainali1, Vishal
Khandelwal1, Xiao Tang1, Xiaohang Li1
1
King Abdullah University of Science and Technology, Saudi Arabia

TuP-ED-5 （Poster）

Electrical properties of N-polar GaN/AlGaN/AlN HEMTs fabricated by MOVPE
Daisuke Inahara1, Aina Hiyama Zazuli1, Ryosuke Ninoki1, Koki Hanasaku1, Taketo Kowaki1, Minagi
Miyamoto1, Kai Fujii1, Taisei Kimoto1, Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1
1
Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ, Yamaguchi 755-0097, Japan, Japan

TuP-ED-6 （Poster）

Relation between threshold voltage and Schottky p-GaN HEMT structure
parameters based on depletion states
Qianshu Wu1, Zhuoran Luo1, Jinwei Zhang1, Miao Zhang1, Xi Yuan1, Yang Liu1
1
School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, China, China

TuP-ED-7 （Poster）

Demonstration of high-permittivity BaTiO3 integrated AlGaN/GaN HEMTs with
instructive breakdown performance
Lin Hao1, Hui Guo1, Tian cheng Hu1, Chuan qi Liu1, Jian dong Ye1, Dun jun Chen1, Rong Zhang1, You dou
Zheng1
1
Nanjing University, China

TuP-ED-8 （Poster）

Effect of Buffer Traps on Contact Resistance in AlGaN/GaN HEMT
A. V. Nandini Devi1, Bhavana Prasannanjaneyulu2, Shreepad Karmalkar3
1
IIT Madras, India, 2 GlobalFoundries, India, 3 IIT Bhubaneswar, India

TuP-ED-9 （Poster）

The fabrication and characterization of a 1200V GaN HEMT device
Yuanyang Xia1, Ke Wang1, Yiheng Li1, Tinggang Zhu1, Sheng Li2, Weihao Lu2
1Corenergy Semiconductor Co., China, 2 Southeast University, China

TuP-ED-10 （Poster）

GaN Vertical Trench Gate Power MOSFET with embedded p-type shielding rings
beneath the gate trench
Hongjie Shao1,2, Yongchen Ji1,2, Xuyang Liu1,2, Chao Liu1,2
1
Shandong University, China, 2 Shenzhen Research Institute, Shandong University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-ED-11 （Poster）

Optimization of Two-zone Step-Etched Junction Termination Structures for Vertical
GaN Power Devices
Andrzej Taube1, Maciej Kaminski1,21Łukasiewicz Research Network, Institute of Microelectronics and Photonics, Poland, 2 Warsaw Universityof Technology, Institute of Microelectronics and Optoelectronics, Poland

TuP-ED-12 （Poster）

1.2 kV-class Vertical GaN Power MOSFETs with Monolithically Integrated
Freewheeling Merged P-i-N Schottky Diodes
Yuchuan Ma1,2, Heng Wang1,2, Sihao Chen1,2, Chao Liu1,2
1
Shandong University, China, 2 Shenzhen Research Institute, Shandong University, China

TuP-ED-13 （Poster）

Polarization-induced doping in n-channel vertical Aluminum-Nitride transistors
Bernd Witzigmann1, Samuel Faber1, Rany Miranti-Augustin2, Friedhard Römer1, Jana Hartmann2,
Christoph Margenfeld2, Mayra Garces-Schröder2, Andreas Waag2
1
Friedrich-Alexander-Universität Erlangen Nürnberg, Erlangen, Germany, Germany, 2 Technical
University Braunschweig, Germany

TuP-ED-14 （Poster）

WSe2/BN Heterostructure-based Optically Modulated Synapse Devices
Atul Chandrakant Khot1, Navaj B. Mullani2, Donghyun Kim1, Junyoung Choi1, Jun Hong Park2, Tae Geun
Kim1
1
Korea University , Korea, 2 Gyeongsang National University, Korea

TuP-ED-15 （Poster）

Comparison of switching characteristics of 650V GaN power device and SiC/Si
power devices
Yoshiyuki Hattori1, Tetsu Kachi2
1
Daido University, Japan, 2 Nagoya University, Japan

TuP-ED-16 （Poster）

Effect of ultra-thin AlGaN regrown layer on the electrical properties of
ZrO2/AlGaN/GaN structures
Toi Nezu1, Shogo Maeda1, Joel Tacla Asubar1, Ali Baratov1, Itsuki Nagase1, Kishi Sekiyama1, Suguru Terai1,
Masaaki Kuzuhara2, Akio Yamamoto1
1
University of Fukui, Japan, 2 Kwansei Gakuin University, Japan

TuP-ED-17 （Poster）

Performance Enhancement of AlGaN/GaN MIS-HEMT & MIS-Diode using
Magnesium silicate as dielectric
Seshasainadh Pudi1, Navneet Bhardwaj1, Ritam Sarkar1, Swagata Bhunia2, Umang Singh1, Anshul Jain3, V
S Santhosh N Varma Bellamkonda1, Apurba Laha1
1
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India,
India, 2 Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India , India, 3Center for Research in Nano Technology and Sciences, Indian Institute of Technology Bombay, Mumbai
400076, India, India

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-ED-18 （Poster）

GaN-based MOS-HEMTs with Mist Chemical Vapor Deposited Gate Insulator
Keigo Bito1, Hikaru Hiroshige1, Ren Hashimoto1, Masaki Ishiguro2, Joel T. Asubar2, Yusui Nakamura1,
Zenji Yatabe1
1Kumamoto University, Japan, 2 University of Fukui, Japan

TuP-ED-19 （Poster）

Hole Traps in SiO2/GaN MOS structures Evaluated by Below-gap Light
Illumination
Kazuki Tomigahara1, Takuma Kobayashi1, Mikito Nozaki1, Takayoshi Shimura1, Heiji Watanabe1
1Osaka university, Japan

TuP-ED-20 （Poster）

Effects of doped Mg concentrations on the reduction of hole traps in the vicinity of
the SiO2/p-GaN MOS interface
Hidetoshi Mizobata1, Mikito Nozaki1, Takuma Kobayashi1, Takayoshi Shimura1, Heiji Watanabe1
1Osaka University, Japan

TuP-ED-21 （Poster）

Demonstration of Depletion Mode AlN MOSFET
Dhanu Chettri1, Ganesh Mainali1, Haicheng Cao1, Mingtao Nong1, Xiaohang Li1
1
King Abdullah University of Science and Technology (KAUST), Saudi Arabia

TuP-ED-22 （Poster）

Expansion of Optimized Dose Range in Junction Termination Extension Structurefor GaN Vertical Power Devices by Utilizing Mg Channeling Implantation
Kazuki Kitagawa1, Maciej Matys1, Testu Kachi1, Jun Suda1
1
Nagoya University, Japan

TuP-ED-23 （Poster）

Improving the insulating properties of C-doped GaN buffer layers
Armin Dadgar1, Thorsten Zweipfennig2, Jasmin Ehrler2, Ralf Borgmann1, Jürgen Bläsing1, Holger Kalisch2,
Andrei Vescan2, André Strittmatter1
1
Otto-von-Guericke-Universität Magdeburg, Germany, 2 RWTH Aachen University, Germany

TuP-ED-24 （Poster）

First-principles calculations on defect energetics and diffusion mechanism of Mg
impurity in GaN
Kaori Seino1,2, Kenji Shiraishi2, Atsushi Oshiyama2
1
Kyushu Institute of Technology, Japan, 2 Nagoya University, Japan

TuP-ED-25 （Poster）

Fabrication and device characteristics of GaN-based npn-type HBTs using a
Quaternary AlGaInN Emitter and a GaInN Base
Masaya Takimoto1, Akira Mase1, Tomoki Kojima1, Takashi Egawa1, Makoto Miyoshi1
1Nagoya Institute of Technology, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-ED-26 （Poster）

Skin-Attachable Microbalance Using Flexible GaN Thin Film for Stress Hormone
Monitoring from Sweat
Jae-Hyun Ryou1, Nam-In Kim1, Asad Ali1
1
University of Houston, United States of America

TuP-ED-27 （Poster）

Selectivity and Response-time of AlN SAW Humidity Sensor Enhancement withZnO Nanorods Grown by Hydrothermal Method
Che Hao Liao1, Tai-Chin Huang1, Zhong-Hong Yen1, Chien-Sheng Huang1, Walter Water2, Shih-Hung Lin1
1
National Yunlin University of Science and Technology, Taiwan, 2 National Formosa University, Taiwan

TuP-ED-28 （Poster）

Effective spin injection into GaN via optimized spin tunneling barriers
Zhenhao Sun1, Ning Tang1, Shixiong Zhang1, Xiaoyue Zhang1, Xingchen Liu1, Shuaiyu Chen1, Jiayang
Jiang1, Guoping Li1, Weikun Ge1, Bo Shen1
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking
University, China

TuP-ED-29 （Poster）

Enhanced triboelectric effect in an N-polar GaN/p-Si dynamic p-n junction for DC
generators
Jia Wang1,2, Haitao Wang3, Yasuyoshi Kurokawa3, Noritaka Usami3, Hiroshi Amano1,2
1Institute for Advanced Research, Nagoya University, Japan, 2 Center for Integrated Research of FutureElectronics, Institute of Materials and Systems for Sustainability, Nagoya University, Japan, 3 Departmentof Materials Process Engineering, Graduate School of Engineering, Nagoya University, Japan

TuP-ED-30 （Poster）

Degradation Study of GaN-based HEMT Under High-temperature Thermal Storage
Huixin Xiu1, Lingyu Huang, Mengen An, Zhenyuan Tian, Zhongyi Lv
1
University of Shanghai for Science and Technology, China

TuP-ED-31 （Poster）

The Electrical Performance Variation and Trap Characterization of AlGaN/GaN
HEMTs under Proton Irradiation
Tian Zhu1, Xuefeng Zheng1, Xiaohua Ma1, Yue Hao1
1
Xidian University, China

TuP-ED-32 （Poster）

Hot carrier degradation under semi-on DC stress in 0.18 μm AlGaN/GaN HEMTs
Junwoo Jung1, Hyungtak Kim1, Byungkyu Min2, Kyujun Cho2, Jongmin Lee2, Yujin Jang2, Dongmin Kang2
1
Hongik University, Korea, 2 Electronic and Telecommunications Research Institute, Korea

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-ED-33 （Poster）

Investigating the degradation mechanism of p-GaN HEMT under Short Circuit
stressMeng Wang1, Xiangdong Li2, Jincheng Zhang3, Hongyue Wang4, Jiahui Yuan5, Zhanfei Han6, Junbo Wang7,
Yue Hao8
1
Guangzhou Wide Bandgap Semiconductor Innovation Center, China, 2 Guangzhou Wide Bandgap
Semiconductor Innovation Center, China, 3 Guangzhou Wide Bandgap Semiconductor Innovation Center,
China, 4 China Electronic Product Reliability and Environmental Testing Research Institute, China, 5Guangzhou Wide Bandgap Semiconductor Innovation Center, China, 6 Guangzhou Wide Bandgap
Semiconductor Innovation Center, China, 7 Guangzhou Wide Bandgap Semiconductor Innovation Center,
China, 8 Guangzhou Wide Bandgap Semiconductor Innovation Center, China

TuP-ED-34 （Poster）

Characterization and distinction of the hole behaviors in p-GaN gate HEMT
through a pre-state double pulse test method
Xin Chen1, Yaozong Zhong1, Yu Zhou1, Qian Sun1, Hui Yang1
1
Key Laboratory of Nano-devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics,
Chinese Academy of Sciences (CAS), Suzhou 215123, China, China

TuP-ED-35 （Poster）

Precise Thermal Characterization of AlGaN/GaN HEMTs Channel using Integrated
Gold Thermistor
Arpit Sahu1, Bazila Parvez1, Subhajit Basak1, Jyoti Sahu1, Mahalaxmi Patil1, Swaroop Ganguly1, Dipankar
Saha1
1
Indian Institute of Technology Bombay, India

TuP-ED-36 （Poster）

Thermal Management in GaN High Electron Mobility Transistors (HEMTs)
Deniz Irem Erus1, Tomas Palacios1
1
Massachusetts Institute of Technology, United States of America

TuP-ED-37 （Poster）

All Epitaxy Nd2O3/AlGaN/GaN MOSHEMT on semi insulating (0001) 4H-SiC:
Increased thermal stability at 473 K
Umang Singh1, Hannah Genath2, Ritam Sarkar1, Jan Kruegener2, H. Joerg Osten2, Apurba Laha1
1
IIT Bombay, India, 2 Leibniz University Hannover, Germany

TuP-ED-38 （Poster）

Design of an accurate GaN SenseFET based on a distributed electro-thermal
network model
Xiaotian Tang1,2, Qimeng Jiang1,2, Sen Huang1,2, Xinhua Wang1,2, Xinyu Liu1,2
1
Institute of Microelectronics of Chinese Academy of Sciences, China, 2 Institute of Microelectronics,
University of Chinese Academy of Sciences, China

TuP-GR-LN1 （Poster）

In-situ monitoring of GaN crystal growth via electroresistometry of Ga-Na solution
in the Na-flux growth
Ricksen Tandryo1, Kosuke Murakami1, Hitoshi Kubo1, Masayuki Imanishi1, Shigeyoshi Usami1, Mihoko
Maruyama1, Masashi Yoshimura2, Yusuke Mori1
1
Graduate School of Engineering, Osaka University, Japan, 2 Institute of Laser Engineering, Osaka
University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-GR-LN2 （Poster）

Highly Uniform Growth of Site-Selective InGaN Single Quantum Dot Emitters in
Hexagonal Symmetric Micro-Pyramidal Arrays
Jeongho Kim1, Yongho Song1, Hwanseop Yeo1, Chanyoung Sung1, Byungsu Kim1, Seonghun Ahn1,
Yonghoon Cho1
1
KAIST, Korea

TuP-GR-LN3 （Poster）

2DEG InGaN based heterostructures: impact of In-content fluctuations on the inplane electron transport at low-temperature.
Joerg Malindretos1, Hendrik Jäckel1, Angela Rizzi1
1
Georg-August-University Goettingen, Germany

TuP-GR-LN4 （Poster）

Top-down (In,Ga)N nanowires fabricated from molecular beam epitaxial layers withhigh structural perfection
Jingxuan Kang1, Mikel Gómez Ruiz1, Duc Van Dinh1, Aidan Campbell1, Achim Trampert1, Miriam Oliva1,
Philipp John1, Jonas Lähnemann1, Thomas Auzelle1, Oliver Brandt1, Lutz Geelhaar1
1Paul-Drude-Institute, Germany

TuP-CH-LN1 （Poster）

Investigation of AlGaN(0001) properties through DFTcalculations
Pawel Strak1, Ashfaq Ahmad1, Karol Kawka1, Pawel Kempisty1
1
Institute of High Pressure Physics PAS, Poland

TuP-CH-LN2 （Poster）

Novel wurtzite AlPxN1-x semiconductor alloy for feasible hole generation and giant
ambipolar sheet carrier density
Wei Shang1, Jiaduo Zhu1,2, Yachao Zhang1, Shengrui Xu1, Jincheng Zhang1,2, Lixin Guo3, Yue Hao1,2
1State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School ofMicroelectronics, Xidian University, China, 2 Shaanxi Joint Laboratory of Graphene, Xidian University,
China, 3 Schoolof Physics, Xidian University, China

TuP-OD-LN1 （Poster）

High-Brightness μLEDs from InGaN/GaN Pyramidal Structure Arrays
Chih-Wei Hsu1,2, Son Phoung Le1,2, Ivan Martinovic1,2, Eric Néstor Tseng1, Zahra Mohammadian Rasnani1,
Per Olof Holtz1,2
1Polar Light Technologies AB, Sweden, 2 Department of Physics, Chemistry and Biology, Linköping
university, Sweden

TuP-OD-LN2 （Poster）

Accelerated learning in wide bandgap AlN artificial photonic synaptic devices:
Impact on suppressed shallow trap level
Jeechan Yoon1, Myung Gwan Hahm1, Moonsang Lee Lee1
1
Inha university, Korea

The 14th International Conference on Nitride Semiconductors (ICNS-14)

TuP-ED-LN1 （Poster）

Ti3C2Tx MXene van der Waals gate contact for GaN high electron mobility
transistors
ChuanJu Wang1, Xiangming xu1, Husam N. Alshareef1, Xiaohang Li1
1
King Abdullah University of Science and Technology., Saudi Arabia

TuP-ED-LN2 （Poster）

Performance Enhancement of n-type AlN Schottky Barrier Diodes Using Rapid
Thermal Annealing Treatment in Oxygen Environment
Haicheng Cao1, Mingtao Nong1, Tingang Liu1, Zhiyuan Liu1, Xiao Tang1, Mritunjay Kumar1, Biplab
Sarkar2, Ying Wu1, Xiaohang Li1
1
King Abdullah University of Science and Technology, Saudi Arabia, 2 Indian Institute of Technology,
Roorkee, India

TuP-ED-LN3 （Poster）

High Reliability Normally-Off Al0.23GaN/GaN MIS HEMT With high-K Gate
Dielectric and 1280 MW/cm2 Figure of Merit
Yutong Fan1,2, Weihang Zhang1,2, Xi Liu1, Yu Wen1, Jincheng Zhang1,2, Zhihong Liu1,2, Shenglei Zhao1,
Yue Hao1,2
1
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,
Xidian University, Xi’an 710071, People’s Republic of China, China, 2 Guangzhou wide bandgap
semiconductor innovation center, Guangzhou institute of technology, Xidian University, Guangzhou 510555,
People’s Republic of China, China

TuP-ED-LN4 （Poster）

Demonstration of an Enhancement-Mode p-Channel GaN/InAlN T-shaped
nanowire FinFETs With High ON-Current and Low ON-Resistance
Xi Liu1
1
Xidian University, China

TuP-ED-LN5 （Poster）

Angle Resolved X-ray Photoelectron Spectroscopy Study of SiO2/GaN Formed by
Atomic-Species-Enhanced Chemical Vapor Deposition
Hiroshi Okada1, Sho Yamagata1, Sogo Shikata1, Akihiro Wakahara1, Masakazu Furukawa2
1
Toyohashi University of Technology, Japan, 2 Aries Research Limited Company, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

November 16(Thu)

Poster Session III
Argos A-C

November 16 (Thu) 16:20 -18:10

ThP-GR-1 （Poster）

Epitaxy of GaN-on-GaN materials and devices with high performance
Guobin Wang1,2, Qi-ang Yan1, Yang Wang1, Zongliang Liu1, Jianfeng Wang2,3, Ke Xu1,2,3
1
Jiangsu Institute of Advanced Semiconductors, China, 2 Suzhou Institute of Nano-Tech and Nano-Bionics,
China, 3 Suzhou Nanowin Science and Technology Co., Ltd., China

ThP-GR-2 （Poster）

Role of Surface Chemistry of Ta Metal Foil on the Growth of Vertically Aligned GaN
Nanorods by Laser MBE
Bipul Kumar Pradhan1,2, Prashant Tyagi1,2, Roopa Roopa1,2, Amit Kumar Mauraya1,2, Sunil Singh
Kushvaha1,2, M. Senthil Kumar1,2
1
CSIR-National Physical Laboratory, Dr.K.S. Krishnan Marg, New Delhi 110012, India, India, 2 Academyof Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India, India

ThP-GR-3 （Poster）

Improving quality of GaN on sapphire by stacked epitaxial lateral overgrowth
Huake Su1, Yujia Wang1, Shengrui Xu1, Tao Zhang1, Yuan Gao1, Hongchang Tao1, Jincheng Zhang1, Yue
Hao1
1
Xidan university, China

ThP-GR-4 （Poster）

Plasma enhanced chemical mechanical polishing for high efficiency surface finishingof GaN substrate
Yuto Sawayama1, Kyosuke Nakagawa1, Keito Ishibashi1, Hidetoshi Takeda1, Toshiro Doi2, Chihiro
Miyagawa3, Masaki Wada3, Toshiyuki Kawasaki4, Kiyoshi Arita4, Hideo Aida1
1
Nagaoka university of technology, Japan, 2 Doi Laboratory Inc., Japan, 3 Fujikoshi Machinery Corp.,
Japan, 4 Nishinippon Institute of Technology, Japan

ThP-GR-5 （Poster）

Dislocation Reduction and Stress Relaxation of GaN Film via Hexagonal 3D
Serpentine Mask
Menglai Lei1, Huanqing Chen1, Shukun Li1, Guo Yu1, Xiaodong Hu1
1
Peking University, China

ThP-GR-6 （Poster）

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift
Layer on Si Substrates
Zhenghao Chen1, Xuelin Yang1, Xuan Liu1, Jianfei Shen1, Bo Shen1
1
Peking University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-GR-7 （Poster）

Research progress of GaN growth by Na Flux
Zhiwei Si1, Zongliang Liu2, Jianfeng Wang1,3, Ke Xu1,2,3
1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, China, 2 Jiangsu Instituteof Advanced Semiconductors, China, 3 Suzhou Nanowin Science and Technology Co, Ltd., China

ThP-GR-8 （Poster）

Controlling stress behavior of sputtered a-plane Al1-xScxN films
Akash Nair1, Lutz Kirste1, Mohammed Yassine2, Balasubramanian Sundarapandian1, Patrik Stranak1, Mario
Prescher1, Mohit Raghuwanshi1, Oliver Ambacher2
1
Fraunhofer Institute for Applied Solid State Physics (IAF), Germany, 2 Albert-Ludwigs-University,
Germany

ThP-GR-9 （Poster）

Sputter deposition of scandium aluminum nitride films – correlating refractive
index and c-axis texture with intrinsic stress
Minghua Li1, Huamao Lin1, Zhan Jiang Quek1, Peng Liu1, Binni Varghese1, Navab Singh1, Yao Zhu1
1
Institute of Microelectronics, Singapore, Singapore

ThP-GR-10 （Poster）

Progresses and challenges in MOCVD of AlScN/GaN heterostructures
Isabel Streicher1, Stefano Leone1, Daniel Alquier2, Meiling Zhang2, Taoufik Slimani Tlemcani2, Micka
Bah2, Patrik Straňák1, Mario Prescher1, Lutz Kirste1, Oliver Ambacher3
1
Fraunhofer Institute for Applied Solid State Physics IAF, Germany, 2 Université de Tours, GREMAN UMRCNRS, France, 3 Institute for Sustainable Systems Engineering, University of Freiburg, Germany

ThP-GR-11 （Poster）

Origins of Abnormal Oriented Grains in Sc0.2Al0.8N-based piezoelectric bimorph
structure
Zhan Jiang Quek1, Peng Liu1, Minghua Li1, Huamao Lin1, Binni Varghese1, Yao Zhu1
1
Institute of Microelectronics, Singapore

ThP-GR-12 （Poster）

New phase diagrams to guide the rational ammonothermal synthesis of complex
ternary nitrides
Joonsoo Kim1, Jiadong Chen1, Wenhao Sun1
1
University of Michigan, United States of America

ThP-GR-13 （Poster）

Effect of Seed Crystal Orientation on the Basic Ammonothermal Growth of GaN:
from +c-axis to m- or a-axis to -c-axis
Jonathan Valenzuela1, Siddha Pimputkar1
1
Lehigh University, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-GR-14 （Poster）

Effects of growth pressure on TMGa decomposition and carbon incorporation in
GaN MOVPE
Hirotaka Watanabe1, Shugo Nitta1, Naoki Fujimoto1, Seiya Kawasaki2, Takeru Kumabe2, Kazuki Ohnishi2,
Yoshio Honda1,3,4, Hiroshi Amano1,3,4
1
Institute of Materials and Systems for Sustainability, Nagoya University, Japan, 2 Graduate School ofEngineering, Nagoya University, Japan, 3 Deep Tech Serial Innovation Center, Nagoya University, Japan,
4
Institute for Advanced Research, Nagoya University, Japan

ThP-GR-15 （Poster）

Development of a MOCVD system with an integrated cleaning system and improved
efficiency for the mass production of GaN epi-wafers
Mizuki Yamanaka1, Kenichi Eriguchi1, Keitaro Ikejiri1, Yuya Yamaoka1, Shuichi Koseki1
1
Taiyo Nippon Sanso Corporation, Japan

ThP-GR-16 （Poster）

Optical Characteristics of BGaN Films Using Oblique Polishing
Ryoya Ozeki1, Daisuke Nakamura1, Ryohei Kudo1, Tetsu Ito1,2, Kohei Shima3, Shigefusa F Chichibu3,
Takayuki Nakano1,2
1
Shizuoka University, Japan, 2 RIE, Shizuoka University, Japan, 3 IMRAM, Tohoku University, Japan

ThP-GR-17 （Poster）

Growth of N-polar AlN and GaN on sapphire by MOVPE
Markus Pristovsek1, Itsuki Furuhashi1, Pietro Pampili2
1
Nagoya University, Japan, 2 current address: Tyndall Institute, Ireland

ThP-GR-18 （Poster）

Advancing GaN-on-Si HEMT manufacturing to the next level using the nextgeneration Planetary MOCVD batch reactor
Christof Mauder1, Dirk Fahle1, Matthias Marx1, Ziyao Gao1, Ian Booker1, Herwig Hahn1, Niels Posthuma2,
Stefaan Decoutere2, Michael Heuken1
1
AIXTRON SE, Germany, 2 imec, Belgium

ThP-GR-19 （Poster）

P incorporation into wurtzite AlPyN1-y by metal-organic vapor phase epitaxy
Xu Yang1, Markus Pristovsek1
1
Nagoya University, Japan

ThP-GR-20 （Poster）

Unveiling the Atomic Step Dynamics during Nitride Growth by OMVPE
Guangxu Ju1, Dongwei Xu2, Carol Thompson3, Matthew J. Highland4, Jeffery A. Eastman5, Weronika
Walkosz6, Peter Zapol5, Bo Shen1, Gregory Brian Stephenson5
1
School of Physics, Peking University, China, 2 School of Energy and Power Engineering, Huazhong
University of Science and Technology, China, 3 Department of Physics, Northern Illinois University , UnitedStates of America, 4 X-ray Science Division, Argonne National Laboratory, United States of America, 5Material Science Division, Argonne National Laboratory, United States of America, 6 Department of
Physics, Lake Forest College, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-GR-21 （Poster）

Systematic Analysis of a Novel High Pressure Spatial Chemical Vapor Deposition(HPS-CVD) Reactor for Flow and Temperature Stability
Hooman Enayati1, Siddha Pimputkar1
1
Lehigh University, United States of America

ThP-GR-22 （Poster）

Preparation of heavily Ge-doped GaN and AlGaN by pulsed sputtering
Aiko Naito1, Kohei Ueno1, Hiroshi Fujioka1
1
Institute of Industrial Science, The University of Tokyo, Japan

ThP-GR-23 （Poster）

High Al-content Quasi-AlGaN Epilayers Grown on GaN-on-sapphire Templates by
Plasma-assisted Molecular Beam Epitaxy Using Binary AlN and GaN Monolayer
Digital Alloying Technique
JunShuai Xue1, GuanLin Wu1, JiaJia Yao1, ZhiPeng Sun1, ZeHui Li1, JinCheng Zhang1, Yue Hao1
1
Xidian University, China

ThP-GR-24 （Poster）

Al/N Ratio Dependence of Low Temperature AlN Growth by RF-MBE
Yuma Kawakami1, Yasuhiro Yamada1, Momoko Deura2, Tsutomu Araki1
1
Ritsumeikan University, Japan, 2 R-GIRO, Japan

ThP-GR-25 （Poster）

Nanowire Driven Epitaxial Lateral Overgrowth (ELOG) of Single Crystal GaN
Layer on Sapphire Substrate
Apurba Laha1
1
Indian Institute of Technology Bombay, Mumbai, India, India

ThP-GR-26 （Poster）

Self-selection of orientation of GaN nanowires grown by plasma assisted MBE on
metallic polycrystalline ZrN buffer layers
Karol Olszewski1, Marta Sobanska1, Aleksandra Wierzbicka1, Zbigniew R. Zytkiewicz1
1
Institute of Physics Polish Academy of Sciences, Warsaw, Poland, Poland

ThP-GR-27 （Poster）

Cracking of films formed by coalescence of GaN nanowires on Si substrate
S. Kryvyi1,2, H. Stanchu2,3, O. Liubchenko1,2, N. Safriuk-Romanenko2, A Kuchuk3, A. Wierzbicka1, M.
Sobanska1, A. Reszka1, V. Kladko2, Zbigniew R Zytkiewicz1
1
Institute of Physics Polish Academy of Sciences, Warsaw, Poland, Poland, 2 V. Lashkaryov Institute of
Semiconductor Physics of NAS of Ukraine, Kyiv, Ukraine, Ukraine, 3 Institute for Nanoscience andEngineering, University of Arkansas, Fayetteville, United States, United States of America

ThP-GR-28 （Poster）

Suppression of Metastable Cubic Phase Inclusion in GaN Growth on ScAlMgO 4
Substrates by RF-MBE
Tsutomu Araki1, Yuuichi Wada1, Yuuya Kuroda1, Naoki Goto1, Yuta Kubo1, Momoko Deura2, Shinichiro
Mouri1, Takashi Fujii1
1Col. of Sci. & Eng., Ritsumeikan University, Japan, 2 R-GIRO, Ritsumeikan University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-GR-29 （Poster）

Controlled Reactive Sputtering and its Benefits in Magnetron Sputter Epitaxy of
AlN and GaN
Alexander Martin Hinz1,2, Katrin Pingen1,2, Dominic Hecker1, Hagen Bartzsch1, Elizabeth von Hauff1,2
1
Fraunhofer FEP, Germany, 2 Technische Universität Dresden, Germany

ThP-GR-30 （Poster）

Influence of substrate types and annealing conditions on superconducting propertiesof niobium nitride
Yang Pei1, Qian Fan1, Xianfeng Ni1, Xing Gu1
1
Institute of Next Generation Semiconductor Materials, Southeast University, China

ThP-GR-31 （Poster）

Optimization of in-reactor in-situ activation annealing conditions for tunnel
junction layers of multi-quantum shell GaN-based LDs
Mizuki Takahashi1, Yuki Yamanaka1, Shiori Ii1, Ayaka Shima1, Soma Inaba1, Kosei Kubota1, Yuta Hattori1,
Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1
1
Meijo University, Japan

ThP-GR-32 （Poster）

InGaN/GaN ordered nanocolumn arrays on AlN/ Si (111) substrates grown by
nanotemplate selective area growth
Kota Hoshino1, Kenya Yoshimura1, Jumpei Yamada2, Rie Togashi1,2, Katsumi Kishino2
1
Sophia University, Japan, 2 Sophia Nanotechnology Research Center, Japan

ThP-GR-33 （Poster）

Catalyst-free growth of high quality single crystalline GaN NWs on a wide-range ofsubstrates simultaneously by pulsed laser deposition
Iman S Roqan1, Dhaifallah Almalawi 1, Fatimah Alreshidi11King Abdullah University of Science and Technology (KAUST), Saudi Arabia

ThP-GR-34 （Poster）

Nanostructured GaN Photoanodes for Enhanced Photoelectrochemical Water
Splitting with ZnO and CdS Cocatalysts
Fawad Tariq1
1
Chonnam National University, Korea

ThP-GR-35 （Poster）

GaN Porous Nanopyramids: Outclassing the Conventional Nanostructures for
Nano-LEDs Fabrication.
Hamza Thaalbi1, Mandar A. Kulkarni1, Fawad Tariq1, Sang-Wan Ryu1
1
Chonnam National University, Korea

ThP-GR-36 （Poster）

Elimination of Defects in N-Polar GaN Nanostructures on Si
Alexana Roshko1, Matt Brubaker1, Todd Harvey1, Kris Bertness1
1
National Institute of Standards and Technology, United States of America

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-GR-37 （Poster）

Study of stacking mismatch boundaries in InGaN platelet red nanoLEDs
Axel R Persson1,2, Anders Gustafsson3,4, Zhaoxia Bi4,5,6, Vanya Darakchieva2,3, Per O. Å Persson1, Lars
Samuelson3,4,5
1
IFM, LinkÖping University, Sweden, 2 C3NiT-Janzén, IFM, LinkÖping University, Sweden, 3 Solid State
Physics and NanoLund, Lund University, Sweden, 4 Institute of Nanoscience and Applications, Southern
University of Science and Technology, China, 5 Hexagem AB, Sweden, 6 Future Display Institute of Xiamen,
China

ThP-GR-38 （Poster）

Epitaxial integration of GaN micro-pillars on a metallic thin film
Blandine Alloing2, Pierre-Marie Coulon2, Lutz Geelhaar1, Oliver Brandt1, Thomas Auzelle1
1Paul-Drude-Institut für Festkörperelektronik, Germany, 2 CRHEA-CNRS, France

ThP-GR-39 （Poster）

Deep-UV emission coming from GaN monolayers grown on AlN top-down µ-wires
sidewalls
Lucie Valera1,2, Lucas Jaloustre3, Saron Rosy Sales de Mello2,3, Erwine Pargon3, Camille Petit-Étienne3,
Gwénolé Jacopin2, Christophe Durand1
1
Univ. Grenoble Alpes, Grenoble-INP, CEA, IRIG, PHELIQS, NPSC, France, 2 Univ. Grenoble Alpes,
Grenoble-INP, CNRS, Institut Néel, France, 3 Univ. Grenoble Alpes, CNRS, CEA/LETI-Minatec, Grenoble
INP, Institute of Engineering and Management University Grenoble Alpes, LTM, France

ThP-GR-40 （Poster）

GaN/Ga2O3 core/shell nanowires: towards high-efficient CO-sensorsNoëlle Gogneau1, Q.-C. Bui1, M. Morassi1, L. Largeau1, T.-H. Nguyen1, L. Travers1, F. Maillard1, X.
Lafosse1, C. Dupuis1, J.-C. Harmand1, Maria Tchernycheva1
1
C2N-CNRS, University Paris Saclay, 10 Boulevard Thomas Gobert 91120 Palaiseau, France, France

ThP-GR-41 （Poster）

Ab initio thermodynamic study of the metallic surface wetting layer during MBE(In)GaN growth and its consequences for dopants incorporation
Pawel Kempisty1, Karol Kawka1, Akira Kusaba2, Yoshihiro Kangawa2
1
Institute of High Pressure Physics, Polish Academy of Sciences, Poland, 2 Research Institute for Applied
Mechanics, Kyushu University, Japan

ThP-GR-42 （Poster）

Faceted Rough Surface Leads to Low Stacking Fault Nucleation-Limited Crystal
GrowthNoriko Akutsu1
1
Osaka Electro-Communication University, Japan

ThP-GR-43 （Poster）

Polygonal Spiral Growth Model on N-polar GaN
Takashi Hanada1, Rikito Murakami1, Takahiko Horiai1, Masao Yoshino1, Akihiro Yamaji1, Shunsuke
Kurosawa1, Kei Kamada1, Yuji Ohashi1, Hiroki Sato1, YuuiYokota1, Akira Yoshikawa1
1
Tohoku University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-GR-44 （Poster）

Strain and Quality Engineering for InGaN-based Red LEDs
Mikhail Rudinsky1, Kirill Bulashevich1
1
Semiconductor Technology Research d.o.o. Beograd, Serbia

ThP-CH-1 （Poster）

Characterization of InGaN/GaN MQWs grown on semipolar (10-11) on SOI
Beatrice Wannous1, Pierre-Marie Coulon2, Fabian Rol1, Ludovic Dupré1, Amélie Dussaigne1, Philippe
Vennéguès2, Jesus Zuniga-Perez2, François Templier1
1
CEA-LETI, France, 2 CRHEA, France

ThP-CH-2 （Poster）

Whispering gallery mode oscillation in wurtzite and zinc-blende GaN microdisks
Yuki Kawaguchi1, Yuka Iwamoto1, Atsushi Syouji1, Tetsuya Kouno2, Akihiko Kikuchi3, Katsumi Kishino3,
Masaru Sakai1
1
University of Yamanashi, Japan, 2 Shizuoka University, Japan, 3 Sophia University, Japan

ThP-CH-3 （Poster）

Study of heat effects of quantum dots as color conversion layer in InGaN based lightemitting diodes
Pei-Chun Chen1, Yung-Ting Chen1, Yun-Zhen Liu1, Hung-Pin Hsu1, Yi-Ping Wang1, Chin-Cheng Weng2,
Tsung-Pei Chiang3
1
Department of Electronic Engineering, Ming Chi University of Technology, Taiwan, 2 Electronic andOptoelectronic System Research Laboratories, Industrial Technology Research Institute, Taiwan, 3Powerview Display Corporation, Taiwan

ThP-CH-4 （Poster）

Characterization of GaN crystals with low carbon concentration grown by halide
vapor phase epitaxy based on photoluminescence spectroscopy
Koshi Sano1, Hajime Fujikura2, Taichiro Konno2, Shota Kaneki2, Shuhei Ichikawa1, Kazunobu Kojima1
1
Osaka University, Japan, 2 Sumitomo Chemical Co. Ltd., Japan

ThP-CH-5 （Poster）

Non-radiative recombination in 230 nm-emitting AlGaN quantum wells
Felix Nippert1, Marcel Schilling1, Nils Bernhardt1, Giulia Cardinali1, Jakob Höpfner1, Tim Wernicke1,
Michael Kneissl1, Markus R. Wagner1,2
1Technische Universität Berlin, Institute of Solid State Physics, Germany, 2 Paul-Drude-Institut für
Festköperphysik, Germany

ThP-CH-6 （Poster）

Time-correlated Luminescence Blinking in InGaN Single Quantum Wells
Shunra Yoshida1, Giovanni Alfieri2, Ruggero Micheletto1
1
Yokohama City University, Japan, 2 Hitachi Energy, Switzerland

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-CH-7 （Poster）

Carrier dynamic and optical properties of pyramid-shaped InGaN/GaN microlight-emitting diodes (µ-LEDs) based multiple quantum wells (MQWs)
Fatimah Alreshidi1, Hadeel Alamoudi1, Noémie Bonnet2, Toon Coenen2, Wei Guo3,4, Iman S Roqan1
1
Semiconductor and Materials Spectroscopy, Physical Sciences and Engineering Division, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia, Saudi Arabia, 2 Delmic B.V.,
Kanaalweg 4, 2628 EB Delft, The Netherlands, Netherlands, 3 Ningbo Institute of Materials Technology
and Engineering, Chinese Academy of Sciences, Ningbo 315201, China, China, 4 University of Chinese
Academy of Sciences, Beijing 100049, China, China

ThP-CH-10 （Poster）

Strain and lattice rotation mapping of GaN at early stage of coalescence bysynchrotron x-ray nano diffraction
Maya Wehbe1,2, Matthew Charles1, Daniel Pino Munoz2, Kilian Baril3, Blandine Alloing3, Jesús Zuniga
Perez3,4, Nabil Labchir5, Sebastien Labau5, Edoardo Zatterin6, Patrice Gergaud1
1
Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France, France, 2 MINES Paris, PSL Univ., Centre
de mise en forme des matériaux (CEMEF), CNRS, CS 10207 rue Claude Daunesse, 06904 Sophia Antipolis,
France, France, 3 Univ. Côte d’Azur, CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France,
France, 4 MajuLab, International Research Laboratory IRL 3654, CNRS, Université Cote d’Azur, Sorbonne
Université, National University of Singapore, Nanyang Technological University, Singapore, Singapore,
Singapore, 5 Univ. Grenoble Alpes, CNRS LTM, 17 Rue Des Martyrs, 38054 Grenoble, France, France, 6
ESRF, The European Synchrotron, 71 Avenue des Martyrs, 38043 Grenoble Cedex 9, France, France

ThP-CH-11 （Poster）

Qualification of GaN and AlN substrates and homoepitaxial layers by laboratory XRay Topography
Sven Besendörfer1, Roland Weingärtner1, Andreas Lesnik1, Gleb Lukin1, Gloria Kurth1, Jörg Schwar2,
Frank Brunner3, Matthias Marx4, Elke Meissner1,5, Jochen Friedrich1
1
Fraunhofer Institute for Integrated Systems and Device Technology IISB, Germany, 2 III/V Reclaim,
Germany, 3 Ferdinand-Braun-Institut (FBH), Germany, 4 AIXTRON SE, Germany, 5 Chair ofElectronDevices (LEB), Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany

ThP-CH-12 （Poster）

Imitative misfit dislocations – plastic deformation of GaN adjacent to strained
InGaN
Joanna Moneta1, Grzegorz Staszczak1, Ewa Grzanka1, Piotr Tauzowski2, Paweł Dłużewski2, Julita SmalcKoziorowska1
1
Institute of High Pressure Physics, Polish Academy of Sciences, Poland, 2 Institute of Fundamental
Technological Research, Polish Academy of Sciences, Poland

ThP-CH-13 （Poster）

Observation of magnetic properties in high-energy proton-irradiated AlGaN/GaN
heterostructure
Dong-Seok Kim1, Jun Kue Park1, Hye-Ran Jeon1
1
Korea Atomic Energy Research Institute, Korea

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-CH-14 （Poster）

Tailoring structural and functional characteristics of a-plane AlScN films grownusing Magnetron Sputter Epitaxy
Akash Nair1, Lutz Kirste1, Balasubramanian Sundarapandian1, Martina Baeumler1, Mohit Raghuwanshi1,
Oliver Ambacher2
1
Fraunhofer Institute for Applied Solid State Physics (IAF), Germany, 2 Albert-Ludwigs-University,
Germany

ThP-CH-15 （Poster）

Polarity Effects in Ion Implanted GaN
Andrzej W. Turos1, Przemyslaw Jozwik1, Cyprian Mieszczynski1, Ewa Grzanka2, Mikolaj Grabowski2,
Robert Czernecki2, Szymon Grzanka2, Michal Leszczynski2
1
National Centre for Nuclear Research, Poland, 2 Institute for High Pressure Physics, Poland

ThP-CH-16 （Poster）

ToF-SIMS analysis of AlScN and AlYN/GaN heterostructures
Patrik Stranak1, Isabel Streicher1, Stefano Leone1, Mario Prescher1, Lutz Kirste1
1
Fraunhofer IAF, Germany

ThP-CH-17 （Poster）

Analysis of sub-surface damages induced by mechanical process toward
establishment of highly efficient wafering process for GaN substrates
Natsuko Omiya1, Hideo Aida2, Hidetoshi Takeda2, Toshiro Doi3
1Sanoh Industrial co.ltd., Japan, 2 Nagaoka University of Technology, Japan, 3 Professor Emeritus ofKyushu University/Doi Laboratory Inc., Japan

ThP-CH-18 （Poster）

Anisotropy of strain state and crystallographic tilt of (0001) InGaN on GaN
templates
Joanna Moneta1, Marcin Krysko1, Jaroslaw Z. Domagala2, Ewa Grzanka1, Michal Leszczynski1, Julita
Smalc-Koziorowska1
1
Institute of High Pressure Physics, Polish Academy of Sciences, Poland, 2 Institute of Physics, Polish
Academy of Sciences, Poland

ThP-CH-19 （Poster）

Comparative study of Ni/Au, Ni/AZO and Ni/ITO bilayer structures for Ohmic
Contacts to p-GaN
Taoufik Slimani Tlemcani1, Clément Mauduit1,2, Micka Bah1, Meiling Zhang 1, Zihao Lyu1, Geoffroy
Rouvre1, Matthew Charles3, Romain Gwoziecki3, Arnaud Yvon2, Daniel Alquier1
1
GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire, 37071 Tours, France, France,
2
STMicroelectronics Tours, 37071 Tours, France, France, 3 Commissariat à l’Énergie Atomique et aux
Énergies Alternatives (CEA), University of Grenoble Alpes, Leti, 38000 Grenoble, France, France

ThP-CH-20 （Poster）

Investigation of leakage path in buffer-free heterostructure
Kai-hsin Wen1,2, Ding-Yuan Chen1,2, Jr-Tai Chen2, Niklas Rorsman1, Mattias Thorsell1
1
Chalmers university of technology, Sweden, 2 SweGaN AB, Sweden

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-CH-21 （Poster）

Two-Dimensional Characterization of Au/Ni/Thin Heavily-Mg-Doped p-/n-GaN
Schottky Contacts under Applied Voltage by Scanning Internal Photoemission
Microscopy
Hiroki Imabayashi1, Haruto Yoshimura1, Fumimasa Horikiri2, Yoshinobu Narita2, Hajime Fujikura2,
Hiroshi Ohta3, Tomoyoshi Mishima3, Kenji Shiojima1
1
University of Fukui, Japan, 2 Sumitomo Chemical, Japan, 3 Hosei University, Japan

ThP-CH-22 （Poster）

Microscopic evaluation of SiO2/GaN interface for power device applications byscanning nonlinear dielectric microscopy
Kohei Yamasue1, Katsunori Ueno2, Tsurugi Kondo2, Ryo Tanaka2, Shinya Takashima2, Yasuo Cho1
1
Tohoku University, Japan, 2 Fuji Electric Co., Ltd., Japan

ThP-CH-23 （Poster）

Low-damage Photo-electrochemical Etching and Electrochemical Characterizationof p-GaN Surface
Umi Takatsu1, Kouta Kubo1, Taketomo Sato1
1
RCIQE,Hokkaido Univ., Japan

ThP-CH-24 （Poster）

THz ellipsometry and optical Hall effect of group-III-Nitride epitaxial layers anddevice structures
Nerijus Armakavicius1, Steffen Richter2, Philipp Kuhne1, Sean Knight1, Alexis Papamichail1, Rosalia
Delgado Carrascon1, Hengfang Zhang1, Vallery Stanishev1, Plamen Paskov1, Mathias Schubert3, Vanya
Darakchieva1,2
1
Center for III-Nitride Technology C3NiT-Janzen, Department of Physics, Chemistry and Biology, IFM,
Linkoping University, Sweden, 2 Center for III-Nitride Technology C3NiT-Janzen, NanoLund and Solid
State Physics, Lund University, Sweden, 3 Department of Electrical and Computer Engineering, Universityof Nebraska-Lincoln, United States of America

ThP-CH-25 （Poster）

Frequency Domain THz-EPR of the Fe3+ Defect in GaN
Viktor Rindert1, Steffen Richter1, Sean Knight1, Alexander Ruder3, Mathias Schubert1,3, Vanya
Darakchieva1,2
1
Lund University, Sweden, 2 Linköping University, Sweden, 3 University of Nebraska-Lincoln, United Statesof America

ThP-CH-26 （Poster）

Impact of doping and current density on universal conductance fluctuations in Gedoped GaN nanowires
Matthias T. Elm1, Patrick Uredat1, Jörg Schörmann1, Martin Eickhoff2, Sangam Chatterjee1, Peter J. Klar1
1
Justus-Liebig-University Giessen, Germany, 2 Universität Bremen, Germany

ThP-CH-27 （Poster）

Carbon Doping Effects on Threading Mixed Dislocations Dissociation in GaN
Han Yang1, Xuelin Yang1, Zhaohua Shen1, Guangxu Ju1, Bo Shen1
1
Peking University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-CH-28 （Poster）

Annealing behavior of deep levels induced by ultra-low-dose Si-ion implantation andsubsequent annealing in homoepitaxial n-type GaN
Hiroko Iguchi1, Masahiro Horita1,2, Jun Suda1,2
1
Nagoya University, Japan, 2 IMaSS, Nagoya University, Japan

ThP-CH-29 （Poster）

Surface Defects and Electronic Impact in GaN-on-GaN
Andrew Winchester1, Michael Mastro2, Travis Anderson2, Jennifer Hite2, Sujitra Pookpanratana1
1
National Institute of Standards and Technology, United States of America, 2 US Naval ResearchLaboratory, United States of America

ThP-CH-30 （Poster）

Nitrogen vacancies in GaN templates and their critical role on the luminescence
efficiency of blue quantum wells
Fangzhi Li1,2, Jianping Liu1,2, Aiqin Tian2, Xuan Li1,2, Fan Zhang2, Hui Yang2
1
University of Science and Technology of China, China, 2 Suzhou Institute of Nano-Tech and Nano-Bionics,
Chinese Academy of Sciences, China

ThP-CH-31 （Poster）

Study on the in-gap emissions form C, O ion-implanted GaN films by photothermal
deflection spectroscopy and photoluminescence
Masatomo Sumiya1, Tasuke Saito1,2, Yuki Arai1,2, Isao Sakaguchi1, Yoshitake Onuma2, Toru Honda2
1
National Institute for Materials Science, Japan, 2 Kougakuin University, Japan

ThP-CH-32 （Poster）

Observation of Nitrogen Vacancies in Semi-Insulating Ammonothermal GaN:Mg
Marcin Zajac1, Leszek Konczewicz1, Elzbieta Litwin Staszewska1, Ryszard Piotrzkowski1, Robert
Kucharski1, Pawel Kaminski2, Roman Kozlowski2
1
Institute of High Pressure Physics, Polish Academy of Sciences, Poland, 2 Lukasiewicz Research Network– Institute of Microelectronics and Photonics, Poland

ThP-CH-34 （Poster）

Exploring Room-Temperature Opto-Spintronic Functionality in Dilute Nitride
Nanostructures
Y.Q. Huang1, V. Polojärvi2, S. Hiura3, P. Höjer1, A. Aho2, R. Isoaho2, T. Hakkarainen2, M. Guina2, S. Sato3,
J. Takayama3, A. Murayama3, I. A. Buyanova1, Weimin M Chen1
1
Linköping University, Sweden, 2 Tampere University, Finland, 3 Hokkaido University, Japan

ThP-CH-35 （Poster）

How Can InGaN/GaN Heterostructures Be Advantageous for the Piezoelectric
Conversion of GaN Nanowires and their Applications?
Amaury Chevillard1, Quang-Chieu Bui1,2, Pascal Chrétien2, Nuño Amador1, Arup Kunti1, Laurent Travers1,
Martina Morassi1, Frédéric Houzé2, Maria Tchernycheva1, Noëlle Gogneau1
1
Centre for Nanosciences and Nanotechnologies, CNRS/Paris-Saclay University/Paris-City University,
France, 2 Group of Electrical Engineering of Paris, Paris-Saclay University/Centralesupélec/Sorbone
University/CNRS, France

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-CH-36 （Poster）

Phonon Behavior of 2D GaN Observed by STEM-EELS
Zhenyu Zhang1, Tao Wang1,2, Weikun Ge1, Ping Wang1, Bo Shen1, Xinqiang Wang1
1
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,
School of Physics, Peking University, China, 2 Electron Microscopy Laboratory, School of Physics, Peking
University, China

ThP-OD-1 （Poster）

The effect of AlN multilayer (ML) growth rate on the growth of semipolar (11-22)
InGaN/GaN LED
Gary Tan1, Ahmad Shuhaimi Abu Bakar1, Hann Sen Low1, Chong Seng Ooi1, Omar Al-Zuhairi1, Yew
Hoong Wong2, Wan Haliza Abdul Majid1
1
Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science,
Universiti Malaya, 50603 Kuala Lumpur, Malaysia, Malaysia, 2 Department of Mechanical Engineering,
Faculty of Engineering, Universiti Malaya, 50603 Kuala Lumpur, Malaysia, Malaysia

ThP-OD-2 （Poster）

Investigation of the Voltage Efficiency of GaN-Based Light-Emitting Diodes at
Cryogenic Temperatures
Changeun Park1, Sangjin Min1, Jong-In Shim1, Dong-Soo Shin1
1
Hanyang University, Korea

ThP-OD-3 （Poster）

Optical and Electrical Noise in RGB LEDs
Danylo Bohomolov1,2, Ulrich T. Schwarz1, Vita Ivanova2
1
Institute of Physics, Chemnitz University of Technology, Germany, 2 Educational and Research Instituteof Physics and Technology, National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic
Institute”, Ukraine

ThP-OD-4 （Poster）

Formation of porous 4H-SiC by modified voltage controlled anodic oxidation forrealization of high color rendering nitride-based white LEDs
Taisei Mizuno1, Syota Akiyoshi1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Yiyu Ou2,
Haiyan Ou2
1
Meijo University, Japan, 2 Technical University of Denmark, Denmark

ThP-OD-5 （Poster）

Group III-Nitride Based Visible Light Emitting Diode: Design, Optimization andFabrication
Arnab Mondal1, Umang Singh1, Apurba Laha1
1
Indian Institute of Technology Bombay, India

ThP-OD-6 （Poster）

The Optoelectric probe with Resonant Cavity enhance Green LEDs array for
optogenetics applications
Binru Zhou1,2, Xiaoping Zhou1, Xiaoyan Yi1, Yiyun Zhang1, Xingfei Zhang1, Quanyong Lu2, Jinmin Li1
1
Institute of Semiconductors, Chinese Academy of Sciences, China, 2 Beijing Academy of Quantum
Information Sciences, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-OD-7 （Poster）

InGaN-based light-emitting diodes grown on a graphene interlayer/patterned
sapphire substrate
Ashutosh Shirsat1, Wei-Tong Po1, Ya-Sin Hsiao1, Wen-Cheng Ke1
1
National Taiwan University of Science and Technology, Taiwan

ThP-OD-8 （Poster）

Orthogonal linearly polarized electroluminescence from a semiconductor resonantcavity light emitting diodeWei Ou1, Yang Mei1, Hao Long1, Yukun Wang1, Tao Yang1, Zhongming Zheng1, Leiying Ying1, Baoping
Zhang1
1
Xiamen University, China

ThP-OD-9 （Poster）

Emitting-color distribution characteristics of GaN-based nanopillar LEDs on multicrystalline Si substrate
Houyao Xue1, Jinyang Li1, Shuhang Gou1, Shingo Taniguchi1, Tsubasa Saito1, Yuichi Sato1
1
Akita University, Japan

ThP-OD-10 （Poster）

Optimization of p-AlGaN electron blocking layer in GaInN/GaN multi-quantumshell LEDs
Yuta Hattori1, Soma Inaba1, Ayaka Shima1, Shiori Ii1, Mizuki Takahashi1, Yuki Yamanaka1, Kosei Kubota1,
Satoshi Kamiyama1, Tetusya Takeuchi1, Motoaki Iwaya1
1
Meijo university, Japan

ThP-OD-11 （Poster）

M-plane AlGaN digital alloy for microwire UV-B LEDs
Lucie Valera1,2, Vincent Grenier1, Sylvain Finot2, Catherine Bougerol2, Joël Eymery3, Gwénolé Jacopin2,
Christophe Durand1
1
Univ. Grenoble Alpes, Grenoble-INP, CEA, IRIG, PHELIQS, NPSC, France, 2 Univ. Grenoble Alpes,
Grenoble-INP, CNRS, Institut Néel, France, 3 Univ. Grenoble Alpes, CEA, IRIG, MEM, NRX, France

ThP-OD-12 （Poster）

Fabrication on GaInN nanocolumns LEDs on the underlying bulk GaInN
Hiromi Akagawa1, Ryuta Shindo1, Jumpei Yamada2, Tomohiro Yamaguchi1, Rie Togashi2,3, Takeyoshi
Onuma1, Ichirou Nomura2,3, Tohru Honda1, Katsumi Kishino2
1
Kogakuin University, Japan, 2 Sophia University, Japan, 3 Sophia Nanotechnology Center, Japan

ThP-OD-13 （Poster）

Carrier Kinetics in optically pumped InGaN/GaN Nanowire Mesh Structure
Fabricated by Top-down Approach
Navneet Kumar Thakur1, Kanchan Singh Rana1, Swaroop Ganguly1, Dipankar Saha1
1
Indian Institute of Technology Bombay, India

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-OD-14 （Poster）

Plasma-Assisted Molecular Beam Epitaxy Grown InGaN/GaN Based MultiQuantum Disk Nanowire Light Emitting Diodes with High Indium Content (<20%)
Soumyadip Chatterjee1, Ajoy Biswas1, Subhranshu Sekhar Sahu1, Umang Singh1, Shashank Rai1, Swagata
Bhunia1, Apurba Laha1
1
Indian Institute of Technology Bombay, India

ThP-OD-15 （Poster）

Design and fabrication of large modulation bandwidth InGaN/GaN laser diodes forhigh-speed visible light communications
Junhui Hu1,2, Junfei Wang1,2, Shulan Yi1,2, Haolin Jia1,2, Chao Shen1,2
1
Fudan University, China, 2 ZGC Institute of Ubiquitous-X Innovation and Applications, China

ThP-OD-16 （Poster）

Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyedohmic contacts
Fan Zhang1,2, Rongxin Wang1, Fangzhi Li1, Aiqin Tian1, Jianping Liu1, Hui Yang1,2
1Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO), Chinese Academy of Science, China, 2Shanghai Tech University, China

ThP-OD-17 （Poster）

High-resolution spectroscopy of blue high-power laser diodes with a Fabry-Pérot
interferometer
Dominic J. Kunzmann1, Raphael Kohlstedt1, Lukas Uhlig1, Ulrich T. Schwarz1
1
Chemnitz University of Technology, Germany

ThP-OD-18 （Poster）

Analytical Models of the Overflow Currents in GaN-based LEDs and LDs
Shukun Li1, Huanqing Chen1, Menglai Lei1, Guo Yu1, Xiaodong Hu1
1
Peking University, China

ThP-OD-19 （Poster）

Heterogeneously integrated InGaN-based green microdisk light-emitters on Si (100)Yiyun Zhang1, Xiaoyan Yi1, Binru Zhou1, Xiaoping Zhou1, Xingfei Zhang1, Zhicong Li1, Guohong Wang1,
Jinmin Li1
1
Institute of Semiconductors, Chinese Academy of Sciences, China

ThP-OD-20 （Poster）

Characteristics of n-GaN buried multi-quantum-shell LDs with facet coating
Shiori Ii1, Mizuki Takahashi1, Yuki Yamanaka1, Soma Inaba1, Ayaka Shima1, Kosei Kubota1, Yuta Hattori1,
Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Kentaro Nonaka2, Yoshitaka Kuraoka2, Takashi
Yoshino2
1
Meijo Univ., Japan, 2 NGK INSULATORS, LTD., Japan

ThP-OD-21 （Poster）

Enhanced performance of GaN Microdisk laser with a dielectric DBR
Zhongqi WANG1, Yuk Fai Cheung1, Wai Yuen Fu1, Hoi Wai Choi1
1
The University of Hong Kong, Hong Kong

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-OD-22 （Poster）

Gradual Degradation of InAlGaN-based Green Laser Diodes
Huixin Xiu1, Peng Xu1, Pengyan Wen2
1
University of Shanghai for Science and Technology, China, 2 Tongji University, China

ThP-OD-23 （Poster）

Crack suppression of high Al-mole-fraction AlGaN layers onpatterned GaN
substrates for ultraviolet laser diodes
Yuto Ando1, Zhiyu Xu1, Theeradetch Detchprohm1, Preston Young2, Russell D Dupuis1
1
Georgia Institute of Technology, United States of America, 2 Photodigm, Inc, United States of America

ThP-OD-24 （Poster）

Study on degradation of deep ultraviolet laser diode
Ziyi Zhang1,2, Maki Kushimoto2, Akira Yoshikawa1,2, Chiaki Sasaoka2, Hiroshi Amano2
1
Asahi Kasei Corporation, Japan, 2 Nagoya University, Japan

ThP-OD-25 （Poster）

Towards long lifetime and ultra-low losses InGaN laser diodes by means of tunnel
junction MOVPE structures.
Lucja Marona1,2, Szymon Grzanka1,2, Julita Smalc Koziorowska1, Krzysztof Gibasiewicz1, Piotr Perlin1,2
1
Institute of High Pressure Physics, Poland, 2 TOPGAN, Poland

ThP-OD-26 （Poster）

Droplet Flow Sensors based on GaN Integrated Devices
Gaofei Lu1, Xiaoshuai An1, Yumeng Luo1, Hongying Yang1, Kwai Hei Li1
1
Southern University of Science and Technology, China

ThP-OD-27 （Poster）

GaN-based Optical Hydrophones for Underwater Acoustic Sensing
Liushu Pan1,2, Jian Chen1,2, Xiaoshuai An1, Yumeng Luo1, Gaofei Lu1, Xinke Tang2, Kwai Hei Li1,2
1
School of Microelectronics, Southern University of Science and Technology, China, 2 PengCheng
Laboratory, Shenzhen, Guangdong, China, China

ThP-OD-28 （Poster）

Viscosity Sensing based on Chip-Scale GaN Optical Integrated Devices
Yumeng Luo1, Jiahao Yin1, Gaofei Lu1, Kwai Hei Li1
1
Southern University of Science and Technology, China

ThP-OD-29 （Poster）

III-Nitride Microsensor for Magnetic Field Detection
Jian Chen1,2, Xinke Tang2, Kwai Hei Li1,2
1Southern University of Science and Technology, China, 2 Peng Cheng Laboratory, China

ThP-OD-30 （Poster）

Monolithically Integrated GaN Optical Devices for Proximity Detection
Xiaoshuai An1, Kwai Hei Li1
1
Southern University of Science and Technology, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-ED-1 （Poster）

High Power-Linearity RF AlN/GaN/InGaN Coupling-Channel HEMTs
Hao Lu1
1
Xidian University, China

ThP-ED-2 （Poster）

A Comparative Study on the DC and RF Performance of GaN HEMTs with a
Graded InAlGaN Barrier
DE SHIEH1, Zheng-fong Lee1, Ming-Yuan Lee1, Hui-Yu Chen2, Po-Tsung Tu2, Po-Chun Yeh2
1
National Central University, Taiwan, 2 Industrial Technology Research Institute, Taiwan

ThP-ED-3 （Poster）

InAlN/GaN HFET for RF-Operation Grown on Silicon Substrate
Thorsten Zweipfennig1, Yuan Ji1, Jasmin Ehrler1, Achim Noculak2, Dominik Meyer3, Christof Mauder3,Jens Bolten4, Holger Kalisch1, Max Christian Lemme4,5, Michael Heuken3,1, Renato Negra2, Andrei Vescan1
1
Compound Semiconductor Technology, RWTH Aachen University, Germany, 2 High Frequency
Electronics, RWTH Aachen University, Germany, 3 AIXTRON SE, Germany, 4 AMO GmbH, Germany, 5Chair of Electronic Devices, RWTH Aachen University, Germany

ThP-ED-4 （Poster）

Epitaxial AlN-based High-Q Bulk Acoustic Wave Resonators: Simulation andFabrication
Padmalochan Panda1, Anshul Jain2, Soumyadip Chatterjee1, Siddharth Tallur1, Apurba Laha11Electrical Engineering Department, Indian Institute of Technology Bombay, Mumbai, India, 2 Center for
Research in Nanotechnology and Science (CRNTS), Indian Institute of Technology Bombay, Mumbai, India

ThP-ED-5 （Poster）

Temperature-Stable Performance of E-mode p-GaN Gate RF HEMT at Cryogenic
Temperatures
Yat Hon Ng1, Zheyang Zheng1, Yan Cheng1, Kevin J. Chen1
1
The Hong Kong University of Science and Technology, Hong Kong, China, Hong Kong

ThP-ED-7 （Poster）

Comparison of AlGaN/GaN High Electron Mobility Transistor (HEMTs) on Siliconwith GaN cap and In-situ SiN with Trapping Analysis
Wesley Sampson1, Abdalla Eblabla1, Arthur Collier1, Arathy Verghese1, Paul Tasker1, Khaled Elgaid1
1Cardiff University, UK

ThP-ED-8 （Poster）

Tri-gate normally-off AlN/GaN HEMTs with excellent RF power performance forboth low-voltage and high-voltage applications
Jingshu Guo1, Jiejie Zhu1, Siyu Liu1, Lingjie Qin1, Yuxi Zhou1, Xiaohua Ma1
1
Xidian University, China

ThP-ED-9 （Poster）

InAlN/GaN HEMTs on Si with Excellent Mm-Wave Noise Performance
Guangjie Gao1,2, Zhihong Liu1,2, Lu Hao1,2, Hanghai Du1, Weichuan Xing2, Hong Zhou1, Weihang Zhang2,
Xiangdong Li2, Jincheng Zhang1,2, Yue Hao1,2
1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, China,
2
Guangzhou Institute of Technology, Xidian University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-ED-10 （Poster）

A Graded-Gate Structure for improving linearity of AlN/GaN HEMT
Bowen Zhang1, Jiejie Zhu1, Siyu Liu1, Jingshu Guo1, Lingjie Qin1, Yuxi Zhou1, Yuanyuan Zhou1, Xiaohua
Ma1
1
Xidian University, China

ThP-ED-11 （Poster）

A 12-16 GHz GaN-on-Si Power Amplifier with >38dBm Output Power and >28%
PAE for Very Small Aperture Terminal Application in SatCom
ROBIN KALYAN1, Nur Aisyah Binte Kuyob1, Xie Hanlin1, Gao Yuan1, Kumud Ranjan2, Raja Muthusamy
Kumarasamy1, Kevin Chai Tshun Chuan1, Kafai Leung1, Navab Singh1
1
Agency for Science, Technology & Research, Singapore, 2 Nanyang Technological University , Singapore

ThP-ED-12 （Poster）

High-performance Broad C-band Power Amplifier without Vias
Bazila Parvez1, Bhanu Bhakta Upadhyay1, Jaya Jha1, Nishant Goel1, Subhajit Basak1, Jyoti Sahu1, Arpit
Sahu1, Mahalaxmi Patil1, Jayanti Paul1, Gaurav Garg1, Swaroop Ganguly1, Dipankar Saha1
1
Indian Institute of Bombay, India

ThP-ED-13 （Poster）

Design of GaN based Envelope Tracking Power Amplifier
Weijun Luo1,2, Xin Jiang1,2, Chenhao Li1,2, Ke Wei1,21Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China, China, 2 Universityof Chinese Academy of Sciences, Beijing 100190, China, China

ThP-ED-14 （Poster）

Fabrication of ultralow bevel angle mesa structures for vertical GaN devices
Jarosław Tarenko1,2, Maciej Kamiński1,2, Andrzej Taube1, Marek Ekielski1, Renata Kruszka1, Magdalena
Zadura1, Anna Szerling1, Paweł Prystawko3, Michał Boćkowski3, Izabella Grzegory3
1Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Poland, 2 Warsaw Universityof Technology - Institute of Microelectronics and Optoelectronics, Poland, 3 Institute of High Pressure
Physics, Polish Academy of Sciences, Poland

ThP-ED-15 （Poster）

Source/Drain Regrowth of Si-doped III-arsenide for GaN-channel HEMTs
Takuya Hoshi1, Yuki Yoshiya1, Hiroki Sugiyama1, Fumito Nakajima1
1
NTT Corporation, Japan

ThP-ED-16 （Poster）

Influence of Different Trench Etching Methods on Schottky Diode Characteristics
for Etch Damage Investigation
Thorsten Zweipfennig1, David Schippers1, Qi Shu1, Jasmin Ehrler1, Arne Debald2, Holger Kalisch1,
Michael Heuken2,1, Andrei Vescan1
1
Compound Semiconductor Technology, RWTH Aachen University, Germany, 2 AIXTRON SE, Germany

ThP-ED-18 （Poster）

Optimization of Schottky barriers for ohmic contacts on p-type GaN
Yuanlei Zhang1,2, Weisheng Wang1,2, Zhiwei Sun1,2, Ye Liang1,2, Zhijie Kong1,2, Jiudun Yan2, Wen Liu1,2
1
Xi'an Jiao-tong Liverpool University, China, 2 University of Liverpool, UK

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-ED-19 （Poster）

High-Quality Ohmic Contacts and Carrier Transport Mechanism of Ni/Ag to PGaN/AlGaN/GaN/Si Platform
Zhiwei Sun1, Maoqing Ling1, Yujin Wu1, Tianyu Zhao1, Weisheng Wang1, Yuanlei Zhang1, Wen Liu1
1
Xi’an Jiaotong Liverpool University, China

ThP-ED-20 （Poster）

Ohmic contacts process to n-GaN irradiated by KrF excimer laser
Yasutsugu Usami1, Kaname Imokawa1, Ryouichi Nordomi1, Tetsu Kachi2
1
Gigaphoton Inc., Japan, 2 Nagoya University, Japan

ThP-ED-21 （Poster）

Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors
Ha Young Kang1, Min Jae Yeom2, Yoonho Choi1, Chanheok Park1, Chan Woong Kim1, Seonchang Kim1,
Gyeong Ryul Lee1, Geonwook Yoo2, Roy Byung Kyu Chung1
1
Kyungpook National University, Korea, 2 Soongsil University, Korea

ThP-ED-22 （Poster）

High-Performance AlGaN/GaN heterojunction Hall Sensors on Si Substrate
Kaiming Ma1, Huolin Huang1, Nan Sun1, Nannan Ding1, Jianxun Dai1, Yanhong Liu1
1
Dalian University of Technology, China

ThP-ED-24 （Poster）

Monolithic Integrated GaN Resonant Tunneling Diode Pair with Picosecond
Switching Time for High-speed Multiple-valued Logic Systemfang liu1, junshuai xue1, jiajia yao1, jincheng zhang1, yue hao1
1xidian university, China

ThP-ED-25 （Poster）

Fabrication and characterization of BGaN diodes for nuclear instrumentation
systemRyohei Kudo1, Tatsuhiro Sakurai1, Seiya Kawasaki2, Tetsuichi Kishishita3, Yoshinori Sakurai4, Hiroshi
Yashima4, Takahiro Makino5, Takeshi Ohshima5, Yoshio Honda2, Hiroshi Amano2, Yoku Inoue1, Toru Aoki1,
Takayuki Nakano1
1
Shizuoka University, Japan, 2 Nagoya University, Japan, 3 High Energy Accelerator Research
Organization (KEK), Japan, 4 KURNS. Kyoto University, Japan, 5 National Institutes for Quantum Scienceand Technology (QST), Japan

ThP-ED-26 （Poster）

UV-Assisted Room Temperature
Heterojunction Field-Effect Sensor

Hydrogen

Hee-Jae Oh1, Won-Tae Choi1, Jeong-Jin Kim1, Ho-Young Cha1
1
Hongik University, Korea

ThP-ED-27 （Poster）

Overvoltage Failure Process of Cascode GaN FETs
Wataru Saito1, Shin-ichi Nishizawa1
1
Kyushu University, Japan

Detection

of

AlGaN/GaN

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-ED-28 （Poster）

Experimental study and characterization on the Thermo-electro multi-physics
coupling failure of GaN HEMTs under high-power microwave pulse
Jiahui Yuan1, Xiangdong Li2, Hongyue Wang3, Zongqi Cai4, Weiheng Shao5, Yiqiang Chen6, Jincheng
Zhang1,7, Yue Hao1,81
Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,
Guangzhou 510555, China, 2 Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou
Institute of Technology, Guangzhou 510555,China, 3 China Electronic Product Reliability andEnvironmental Testing Research Institute, Guangzhou 511370, China, 4 China Electronic ProductReliability and Environmental Testing Research Institute, Guangzhou 511370, China, 5 China Electronic
Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China, 6 China
Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China, 7
Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics,
Xidian University, Xi’an 710071, China, 8 Key Laboratory of Wide Bandgap Semiconductor Materials andDevices, School of Microelectronics,Xidian University, Xi’an 710071, China

ThP-ED-29 （Poster）

The degradation of threshold voltage induced by forward gate voltage stress in the
p-GaN/AlGaN/GaN HEMTs
Myeongsu Chae1, Hyungtak Kim1
1
Hongik University, Korea

ThP-ED-30 （Poster）

Investigation of the VTH Instability Induced by Different Trap States in AlGaN/GaN
MIS-HEMTs under High Reverse Gate Stress
Hao Zhang1, Xuefeng Zheng1, Yuehua Hong1, Jialong Wang1, Xiaohua Ma1, Yue Hao1
1
Xidian University, China

ThP-ED-31 （Poster）

Mg Concentration Dependence of Threshold Voltage Shift under Sub-Eg Light
Illumination and Positive Bias Stress in Vertical GaN Trench MOSFETs
Mitsuki Inagaki1, Tohru Oka1,2, Nariaki Tanaka2, Kazuya Hasegawa2, Takatomi Izumi2, Tsutomu Ina2, Go
Nishio2, Takaki Niwa2, Jun Suda1
1
Nagoya University, Japan, 2 Toyoda Gosei, Japan

ThP-ED-32 （Poster）

Effect of GaN Channel Thickness on Device Performances of AlGaN/GaN HEMT
Grown on AlN Buffer Layer
Jeong-Won Yang1, Geon-Woo Kim1, Jae-Jin Kim1, Na-Yeon Kang1, Hee-Gu Kwak1, Hee-Su Kim1, Okhyun
Nam2, Ki-Sik Im1
1
Daegu Campus, Korea Polytechnics, Korea, 2 Tech University of Korea, Korea

ThP-ED-33 （Poster）

Interface and transport properties of N-polar GaN/AlGaN MIS-HEMTs withdifferent gate dielectrics
Yuxi Zhou1, Haotian Ma2, Gaoqiang Deng2, Jiejie Zhu1, Jingshu Guo1, Siyu Liu1, Yuantao Zhang2, Xiaohua
Ma1
1
The National Key Discipline Laboratory of Wide Bandgap Semiconductor, School of Microelectronics,
Xidian University, China, 2 State Key Laboratory of lntegrated Optoelectronics, College of Electronic
Science and Engineering, Jilin University, China

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-ED-34 （Poster）

Novel Analysis of Noise in TMAH-treated Normally-off GaN Transistors
Hee-Su Kim1, Hee-Gu Kwak1, Na-Yeon Kang1, Jeong-Won Yang1, Geon-Woo Kim1, Jae-Jin Kim1, Ki-Sik
Im1
1
Daegu Campus, Korea Polytechnics, Korea

ThP-ED-35 （Poster）

Study on 2DEG Density in ScAlN/GaN and AlGaN/GaN Heterostructures Based on
Simulation and Analytical Modeling
Yusuke Wakamoto1, Atsushi Kobayashi2, Yoshiaki Nakano1, Takuya Maeda1
1
The University of Tokyo, Japan, 2 Tokyo University of Science, Japan

ThP-GR-LN1 （Poster）

Metastable shallow Si donors in AlN
Yujie Liu1, Sieun Chae1, Emmanouil Kioupakis1
1
University of Michigan, United States of America

ThP-GR-LN2 （Poster）

Investigation of Polarization Doping in Nitrogen Polar Graded Al xGa1-xN (1>x>0.5)
Film by Plasma Assisted Molecular Beam Epitaxy
Md Irfan Khan1, Cindy Lee3, Elaheh Ahmadi1,2
1
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, UnitedStates of America, 2 Department of Electrical and Computer Engineering, University of California, Los
Angeles, United Statesof America, 3 Department of Mechanical Engineering, University of Michigan, Ann
Arbor, United States of America

ThP-GR-LN3 （Poster）

A New Tool for the Quantification of Impurities in PVT-AlN Bulk Crystals: UV
Absorption
Andrew Klump1, Carsten Hartmann1, Matthias Bickermann1, Thomas Straubinger1
1
Leibniz-Institut für Kristallzüchtung, Germany

ThP-GR-LN4 （Poster）

Buffer-free GaN-on-X engineered substrates fabricated by Smart Cut TM technology
Gweltaz Gaudin1, Christelle Veytizou1, Jan Strate1, Florence Servant1, Amélie Thomas1, Ionut Radu1, Amal
Sediri2, Pierrick Gilles2, Marc Rabarot2, Frank Fournel2, Frédéric Mazen2, Sophie Giroud2, Cécile Moulin2,
Yann Bogumilowicz2
1
Soitec SA, France, 2 Univ. Grenoble Alpes, CEA, LETI, France

ThP-GR-LN5 （Poster）

Computational investigation of GaN growth for power electronics applications
Kana Ishisone1, Mauro Boero1,2, Kieu My Bui2, Atsushi Oshiyama2, Yoshihiro Kangawa2,3, Kenji
Shiraishi2,4
1
University of Strasbourg, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, UMR 7504,
France, 2 Institute of Materials and Systems for Sustainability, Nagoya University, Japan, 3 ResearchInstitute for Applied Mechanics, Kyushu University, Japan, 4 Graduate School of Engineering, Nagoya
University, Japan

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-CH-LN1 （Poster）

Deep-UV hyperspectral microscopy of high quality epitaxial hBN monolayers grownby MBE
Adrien Rousseau1, Pierre Valvin1, Juliette Plo1, Alexandra Ibanez1, Tin S. Cheng2, Jonathan Bradford2, Tyler
S.S. James2, Christopher J. Mellor2, Peter H. Beton2, Sergei V. Novikov2, Guillaume Cassabois1, Bernard
Gil1
1
Laboratoire Charles Coulomb, France, 2 University of Nottingham, UK

ThP-OD-LN1 （Poster）

Fabricating Dot-LEDs for Display Applications: A Novel Approach Using
Electrochemical Etching and Sonochemical Separation
Minji Ko1, SeungJe Lee1, Yun Jae Eo1, Keyong Nam Lee1, Young Rag Do1
1
Kookmin University, Korea

ThP-OD-LN2 （Poster）

Improved Alignment Orientation of Individually Separated Nanorod LightEmitting Diodes through DC offset-AC Dielectrophoresis
Yun Jae Eo1, Minji Ko1, SeungJe Lee1, Keyong Nam Lee1, Young Rag Do1
1
Kookmin University, Korea

ThP-OD-LN3 （Poster）

Enhancing AlGaN UV laser emission by hyperbolic metamaterial resonator
Kun-Ching Shen1, Lung-Hsing Hsu1, Yuh-Jen Cheng1
1
Academia Sinica, Taiwan, Taiwan

ThP-ED-LN1 （Poster）

Multi-Gate Finger Microwave GaN HEMTs on Si substrates with Individual Source
Vias
Lu Hao1, Zhihong Liu1, Hanghai Du1, Guangjie Gao1, Jincheng Zhang1, Weichuan Xing1, Hu Wei1, hongZhou1, Yue Hao1
1
Xidian University, China

ThP-ED-LN2 （Poster）

Investigating the Short Channel Effects and Scaling Capability between N-polar andGa-polar GaN HEMTs
Hao Lee1, Yuh-Renn Wu1
1
National Taiwan University, Taiwan

ThP-ED-LN3 （Poster）

Strain Engineered Unified SiN Deposition for Device Passivation and CapacitanceDielectric in GaN MMIC
Jyoti Sahu1, Bazila Parvez1, Jayanti Paul1, Ranie J. 1, Subhajit Basak1, Mahalaxmi Patil1, Arpit Sahu1,
Nishant Goel1, Swaroop Ganguly 1, Dipankar Saha1
1
Department of Electrical Engineering, IIT Bombay, India

Author index

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ICNS-14 Author Index― A ―Abdul Majid, W. ThP-OD-1
ABID, I.
ED7-2
Abid, I.
MoP-GR-43
Abid, I.
TuP-GR-43
Abrikossova, N. MoP-GR-32
Abu Bakar, A.
ThP-OD-1
Adachi, M.
MoP-GR-6
Adams, F.
CH4-6
Aggarwal, N.
CH12-5
Agrawal, S.
CH8-6
Aharonovich, I.
CH12-5
Ahmad, A.
TuP-CH-LN1
Ahmad, A.
TuP-OD-30
Ahmad, H.
ED13-7
Ahmad, H.
GR18-2
Ahmad, H.
GR7-6
Ahmadi, E.
ED13-2
Ahmadi, E.
GR4-3
Ahmadi, E.
ThP-GR-LN2
Ahn, S.
LN2-4
Ahn, S.
TuP-GR-LN2
Aho, A.
ThP-CH-34
Ahumada-Lazo, R. CH16-3
Aida, H.
ThP-CH-17
Aida, H.
ThP-GR-4
Akagawa, H.
ThP-OD-12
Akaike, R.
CH9-2
Akar, E.
GR17-6
Akar, E.
OD9-2
Akasaka, T.
MoP-GR-40
Akazawa, M.
CH6-5
Akazawa, M.
ED5-1
Akazawa, M.
TuP-CH-23
Akimoto, M.
OD7-2
Akiyama, T.
GR4-4
Akiyama, T.
GR9-3
Akiyama, T.
JT3-2
Akiyama, T.
TuP-GR-6
Akiyoshi, S.
ThP-OD-4
Akso , E.
GR11-5Akso, E.
ED9-7-LN
AKTAS, M.
OD12-4
Akutsu, N.
ThP-GR-42
Al Khalfioui, M.
GR14-1
Al Khalfioui, M.
MoP-GR-12
Alam, D.
ED10-6
Alamoudi, A. H. TuP-OD-1
Alamoudi, H.
MoP-CH-7
Alamoudi, H.
ThP-CH-7
Albrecht, M.
CH8-3
Aleksiejunas, R.
CH10-4
Alexander, D.
CH10-2
Alexander, T. L. D. CH10-3
Alfieri, G.
ThP-CH-6

Ali, A.
TuP-ED-26
Alian, A.
GR11-1
Allerman, A.
ED4-3
Allerman, A. A.
ED12-4Allerman, A. A.
GR17-3
Alloing, B.
OD16-1
Alloing, B.
ThP-CH-10
Alloing, B.
ThP-GR-38
Almalawi , D. ThP-GR-33
Almeter, J.
ED7-5
Almeter, J.
GR6-7
Almushaikeh, A. MoP-GR-3
AlQatari, F.
MoP-GR-3
Alquier, D.
ThP-CH-19
Alquier, D.
ThP-GR-10
Alreshidi, F.
MoP-CH-7
Alreshidi, F.
ThP-CH-7
Alreshidi, F.
ThP-GR-33
Alreshidi, F.
TuP-OD-1
ALTINKAYA, C.
OD4-3
Al-Zuhairi, O.
ThP-OD-1
Amador, N.
ThP-CH-35
Amador-Medez, N. JT2-3
Amano, H.
ED1-3
Amano, H.
ED4-4
Amano, H.
ED9-6
Amano, H.
GR1-4
Amano, H.
GR2-2
Amano, H.
GR5-1
Amano, H.
LN2-3
Amano, H.
MoP-ED-5
Amano, H.
MoP-GR-34
Amano, H.
MoP-GR-8
Amano, H.
MoP-OD-28
Amano, H.
OD13-1
Amano, H.
OD13-2
Amano, H.
OD14-1
Amano, H.
OD5-1
Amano, H.
PL-1
Amano, H.
ThP-ED-25
Amano, H.
ThP-GR-14
Amano, H.
ThP-OD-24
Amano, H.
TuP-ED-29
Amano, H.
TuP-GR-26
Amano, H.
TuP-GR-29
Amano, H.
TuP-GR-42
Ambacher, O.
CH2-4
Ambacher, O.
ED13-1
Ambacher, O. MoP-ED-33
Ambacher, O.
ThP-CH-14
Ambacher, O. ThP-GR-10
Ambacher, O.
ThP-GR-8
An, M.
TuP-ED-30
An, S.
ED8-4
An, X.
ThP-OD-26
An, X.
ThP-OD-27
177

An, X.
ThP-OD-30
Andersen, A.
GR8-4
Anderson, J. T.
CH5-3
Anderson, J. T.
CH5-5
Anderson, J. T.
ED12-1
Anderson, J. T.
LN1-3
Anderson, R.
OD3-3
Anderson, T.
ED4-5
Anderson, T.
GR5-4
Anderson, T.
ThP-CH-29
Andersson, H.
OD5-5
Andersson, H. TuP-OD-25
Ando, Y.
ED9-1
Ando, Y.
ED9-2
Ando, Y.
ThP-OD-23
Andre, Y.
MoP-GR-37
Aoike, R.
MoP-GR-29
Aoki, T.
ThP-ED-25
Aoki, T.
TuP-GR-26
Aoki, Y.
CH10-5
Aoki, Y.
OD15-5
Aoto, K.
MoP-GR-8
Aoto, K.
OD5-1
Aoyama, R.
OD9-4
Apaydin, D.
OD5-5
Apaydin, D.
TuP-OD-25
Aqib, M.
ED15-1
Arai, M.
ED12-3
Arai, M.
ED9-6
Arai, S.
CH14-4
Arai, Y.
ThP-CH-31
Arakawa, Y.
CH13-2
Araki, T.
MoP-CH-24
Araki, T.
ThP-GR-24
Araki, T.
ThP-GR-28
Araki, T.
TuP-CH-15
Araki, T.
TuP-GR-17
Araki, T.
TuP-GR-21
Araki, T.
TuP-GR-37
Arguello Plaza, D. GR17-4
Arias, A.
ED11-1
Aristegui, R.
TuP-CH-34
Arita, K.
ThP-GR-4
Armakavicius, N.
ThP-CH-24
Armitage, R.
OD4-1
Armstrong, A.
OD4-1
Armstrong, M. A. ED12-4
Armstrong, M. A. GR17-3
Arredondo, M.
GR16-5
Arulkumaran, S.
ED13-3
Arulkumaran, S.
ED9-4
As, J. D.
GR11-2
As, J. D.
TuP-GR-39
As, J. D.
TuP-GR-7
Asahi, T.
OD16-3

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Asaji, T.
CH15-2Ashraf, H.
TuP-CH-13
Asubar, T. J.
TuP-ED-16
Asubar, T. J.
TuP-ED-18
Audibert, M.
MoP-OD-7
August, O.
CH13-2
August, O.
TuP-GR-7
Auzelle, T.
GR14-2
Auzelle, T.
LN2-7
Auzelle, T.
ThP-GR-38
Auzelle, T.
TuP-GR-LN4
Aventurier, B.
OD15-2
Aventurier, B.
OD15-4Avit, G.
MoP-GR-37
Azuhata, T.
GR16-4― B ―Babij, M.
TuP-CH-14
Baby, R.
MoP-ED-8
Bae, D.
MoP-GR-44
Baeumler, M.
ThP-CH-14
Bagheri, P.
ED7-5
Bagheri, P.
GR4-5Bah, M.
ThP-CH-19
Bah, M.
ThP-GR-10
Bahat Treidel, E.
CH4-1
Bahat Treidel, E.
CH8-5
Bahat Treidel, E.
ED7-1
Bahat Treidel, E.
MoP-GR-43
Bahat Treidel, E. TuP-CH-12
Bahat-Treidel, E. TuP-CH-6
Bai, Y.
OD11-1
Baigarinova, G. TuP-GR-11
Baik, K.
MoP-OD-24
Bak, B.
TuP-OD-2
Bakeroot, B.
ED1-2
Bakeroot, B.
ED3-3
Bakhtiary-Noodeh, M.
CH4-3
Ballot, C.
OD15-2
Balzerani, D.
OD9-1
Banerjee, S.
CH7-7
Banerjee, S.
GR11-1Banon, J.
CH10-1Banon, J.
TuP-OD-29
Bansal, A.
MoP-ED-8
Bao, Q.
GR12-5Baratella, G.
ED3-3
Baratov, A.
TuP-ED-16
Barbier, C.
MoP-GR-37
barbier, f.
MoP-CH-10
Barbier, F.
MoP-OD-7
Barbier, F.
OD15-4BARBIER, F.
TuP-GR-2
Barchuk, M.
MoP-CH-15
Baril, K.
ThP-CH-10
Bartsch, H.
MoP-CH-28
Bartsch, H.
TuP-GR-36
Bartzsch, H.
ThP-GR-29
Baruchel, J.
GR12-7

Basak, S.
MoP-ED-19
Basak, S.
ThP-ED-12
Basak, S.
ThP-ED-LN3
Basak, S.
TuP-ED-35
Bassaler, J.
ED16-5
Bassaler, J.
MoP-ED-12
Bassaler, J.
MoP-ED-20
Bassaler, J.
TuP-CH-26
Bastin, D.
MoP-GR-33
Bathurst, L.
GR15-2Becht, C.
GR10-2Becht, C.
OD4-4
Beck, L.
MoP-GR-25
Becker, C.
GR11-2
Becker, C.
TuP-GR-39
Bellamkonda, V. TuP-ED-17
Bellet-Amalric, E.
MoP-OD-14
Ben Hammou, L.
ED11-2
Ben Hammou, L.
ED6-4
Ben, J.
MoP-GR-1
Ben, J.
MoP-OD-12
Benkhelifa, F.
CH2-4
Bennett, A.
OD10-3
Bera, L.
ED9-4
Berger, C.
CH13-2
Berger, C.
CH13-4
Berger, C.
CH3-2
Berger, C.
MoP-GR-25
Bergman, J.
ED11-1
Bergmann, M.
OD5-6
BERNARD, M. TuP-GR-2
Bernhard, N.
CH12-5
Bernhardt, N.
ThP-CH-5
BERNIER, N.
TuP-GR-2
Bertness, K.
MoP-CH-3
Bertness, K.
ThP-GR-36
Bertoni, M.
GR15-2
Bertot, A.
OD9-2
Bertram, F.
CH13-2
Bertram, F.
CH13-4
Bertram, F.
CH3-2
Bertram, F.
TuP-GR-7
Bès, R.
TuP-CH-22
Besendoerfer, S.
ED7-1
Besendörfer, S.
CH8-5
Besendörfer, S. MoP-GR-43
Besendörfer, S. ThP-CH-11
Besendörfer, S. TuP-GR-43
Beton, H. P.
ThP-CH-LN1
Beyer, A.
GR11-2Beyer, A.
TuP-GR-39
Beyer, C. F.
GR13-3Beyer, C. F.
TuP-CH-5
Beyer, J.
GR13-3Beyer, J.
TuP-CH-5
Bhardwaj, B. MoP-OD-23
Bhardwaj, N.
TuP-ED-17
Bhattacharyya, A.
MoP-OD-9
178

Bhunia, S.
JT3-3
Bhunia, S.
MoP-CH-35
Bhunia, S.
ThP-CH-9
Bhunia, S.
ThP-OD-14
Bhunia, S.
TuP-ED-17
Bi, Z.
ThP-GR-37
Bickermann, M.
GR15-4
Bickermann, M.
ThP-GR-LN3
Biegler, J. Z.
ED2-4
Biegler, Z.
ED3-1
Biegler, Z.
OD14-5Bilchenko, F.
GR6-1
Binder, A.
ED4-3
Binder, J.
CH12-4
Binder, J.
GR16-6
Binder, J.
MoP-ED-32
Binder, J.
MoP-GR-31
Binder, M.
OD4-4
Binder, T. A.
GR17-3
Binetti, M.
MoP-ED-31
Binks, J. D.
CH16-3Birch, J.
TuP-GR-36
Bishop, S.
OD10-3
Biswas, A.
MoP-CH-35
Biswas, A.
ThP-CH-9
Biswas, A.
ThP-OD-14
Biswas, A.
TuP-GR-35
Bito, K.
TuP-ED-18
Black, T.
GR15-2
Blaho, M.
ED16-3
Blaho, M.
TuP-GR-45
Bläsing, J.
CH13-4
Bläsing, J.
TuP-ED-23
Bockowski, M.
CH16-5
Bockowski, M.
CH5-5
Bockowski, M.
CH6-1
Bockowski, M.
CH6-2
Bockowski, M.
CH6-3
Bockowski, M.
CH6-4
Bockowski, M.
ED2-2
Bockowski, M.
ED4-2
Bockowski, M.
ED5-3
Bockowski, M.
GR12-2
Bockowski, M.
GR12-3
Bockowski, M.
GR12-4
Bockowski, M.
GR12-7
Bockowski, M.
GR3-3
Bockowski, M.
GR7-1
Bockowski, M.
GR8-7
Bockowski, M. MoP-CH-18
Bockowski, M. MoP-CH-19
Bockowski, M. MoP-GR-36
Bockowski, M. TuP-GR-44
Bockowski, M.
TuP-GR-8
Boćkowski, M.
GR18-4
Boćkowski, M. MoP-ED-34
Boćkowski, M. ThP-ED-14
Boero, M.
ThP-GR-LN5
Bogumilowicz, Y.

The 14th International Conference on Nitride Semiconductors (ICNS-14)

ThP-GR-LN4
Bohomolov, D. ThP-OD-3
Bolten, J.
ThP-ED-3
Bondokov, T. R.
GR15-3
Bondokov, T. R. TuP-GR-1
Bonnet, N.
ThP-CH-7
Booker, I.
ThP-GR-18
Borga, M.
ED1-2
Borga, M.
ED3-3
Borgmann, R.
TuP-ED-23
Boris, D.
MoP-GR-42
Bornemann, S. MoP-OD-27
Bornemann, S.
TuP-OD-5
Borujeny, R. E.
ED6-5
Borysiewicz, M.
JT1-4
Bouchoule, S.
JT2-3
Bouchoule, S.
OD16-1
Bougerol, C. MoP-OD-14
Bougerol, C.
ThP-OD-11
Bouyer, Y.
MoP-ED-12
Boyam, S.
MoP-OD-28
Boyama, S.
OD13-1Bożek, R.
MoP-ED-32
Bradford, J.
ThP-CH-LN1
Brandli, V.
OD10-2
Brandt, O.
CH5-1
Brandt, O.
GR14-2
Brandt, O.
JT3-1
Brandt, O.
LN2-7
Brandt, O.
MoP-CH-3
Brandt, O.
ThP-GR-38
Brandt, O.
TuP-GR-LN4
Brar, B.
ED11-1Brault, J.
GR14-1Brault, J.
LN2-5
Brault, J.
MoP-GR-12
Brejnak, A.
GR10-2
Brejnak, A.
OD16-2
Bremers, H.
GR3-4
Bremers, H.
MoP-CH-6
Brennecka, G.
ED15-2
Breuer, S.
OD6-3
Briggs, B.
ED2-5
Briggs, D. B.
ED12-2
Brimont, C.
OD16-1
Brimont, C.
TuP-CH-34
Britt, J.
GR15-6
Britt, J.
TuP-CH-24
Brubaker, M.
MoP-CH-3
Brubaker, M.
ThP-GR-36
Bruckbauer, J. MoP-CH-16
Brunner, F.
CH4-1
Brunner, F.
CH8-5
Brunner, F.
ED7-1
Brunner, F.
GR2-5
Brunner, F.
MoP-CH-12
Brunner, F.
MoP-GR-43
Brunner, F.
ThP-CH-11
Brunner, F.
TuP-CH-12
Brunner, F.
TuP-CH-6

Brusaterra, E.
CH4-1
Brusaterra, E. MoP-GR-43
Brusaterra, E.
TuP-CH-6
Brusattera, E.
ED7-1
Bryan, M.
CH17-5
Brzozowski, E.
ED4-2
Buckley, J.
GR17-4
Bucyte, G.
MoP-CH-23
Buffolo, M.
CH4-1
Buffolo, M.
OD13-4
Bui, M. K.
ThP-GR-LN5
Bui, Q.
ThP-CH-35
Bui, Q.
ThP-GR-40
Bulashevich, K. ThP-GR-44
Butej, B.
CH7-4
Butté, R.
CH10-2
Butté, R.
CH10-3
Butté, R.
CH13-5
Buyanova, A. I. ThP-CH-34
Buyanova, I. MoP-CH-LN2― C ―CADOT, S.
TuP-GR-2
Cai, H.
OD10-5Cai, Q.
MoP-CH-33
Cai, Q.
MoP-GR-10
Cai, t.
GR6-5Cai, W.
LN2-3
Cai, Z.
MoP-ED-10
Cai, Z.
ThP-ED-28
Calarco, R.
CH5-1
CALISTE, D.
OD6-5
Cambril, E.
OD16-1
Cameron, D.
MoP-CH-5
Campbell, A. TuP-GR-LN4
Cañas, J.
MoP-OD-14
Cannon, J.
OD10-3
Cao, b.
TuP-GR-5
Cao, H.
TuP-ED-21
Cao, H.
TuP-ED-LN2
Cardinali, G.
OD5-3
Cardinali, G.
OD5-5
Cardinali, G.
OD5-6
Cardinali, G.
OD6-1
Cardinali, G.
ThP-CH-5
Cardinali, G.
TuP-OD-25
Carlin, J.
CH10-2
Carlin, J.
CH10-3
Carlin, J.
CH13-5
Carlin, J.
MoP-OD-29
Carlin, J.
OD4-4
Carlin, J.
TuP-OD-6
Carneiro, E.
ED11-2Carrascon, D. R. ThP-CH-24
Carrascon, R. MoP-CH-29
Cassabois, G.
CH12-1
Cassabois, G.
GR14-1
Cassabois, G.
GR16-2Cassabois, G.
LN2-5
Cassabois, G. MoP-CH-LN3
Cassabois, G.
OD10-1
179

Cassabois, G. ThP-CH-LN1
Cassabois, G.
TuP-CH-21
Castiglia, A.
OD12-3
Castioni, F.
CH17-5
Celupica-Liu, I.
ED2-4
Cha, H.
ED12-6Cha, H.
MoP-ED-11
Cha, H.
MoP-ED-25
Cha, H.
MoP-ED-29
Cha, H.
ThP-ED-26
Cha, Y.
TuP-OD-7
Chae, M.
ThP-ED-29
Chae, S.
ThP-GR-LN1
Chai, H.
TuP-CH-32
Chai, J.
GR9-2
Chambinaud, V.
OD15-2Chandrasekar, H. MoP-ED-8
Chandrashekar, H.
TuP-GR-30
Chandrashekhar, M. ED10-6
Chandrashekhar, M. GR7-3
Chandrashekhar, M. GR8-5
Chang, C.
ED16-2
Chang, C.
LN1-2
Chang, Q.
ED11-3
Chang, Q.
MoP-ED-22
Chang, Y.
OD1-3
Chapron, D.
MoP-GR-25
Charan, P. B.
TuP-GR-12
Charles, M.
GR17-4
Charles, M.
MoP-ED-30
Charles, M.
OD15-2
Charles, M.
OD15-4
Charles, M.
ThP-CH-10
Charles, M.
ThP-CH-19
Charles, M.
TuP-GR-22
Chatterjee, S.
ED16-1Chatterjee, S.
GR11-2Chatterjee, S.
JT3-3
Chatterjee, S. MoP-CH-35
Chatterjee, S.
ThP-CH-26
Chatterjee, S.
ThP-CH-9
Chatterjee, S.
ThP-ED-4
Chatterjee, S.
ThP-OD-14
Chatterjee, S.
TuP-GR-35
Chatterjee, S.
TuP-GR-39
Chaturvedi, N. ThP-ED-LN4
Chaulker, H. O. TuP-CH-25
Chauvat, M.
LN2-8
Chauvat, P. M.
ED16-3Chen , L.
MoP-CH-7
Chen, B.
TuP-OD-24
Chen, C.
CH4-6
Chen, C.
OD11-2
Chen, D.
CH10-2
Chen, D.
CH7-2
Chen, D.
ED3-7
Chen, D.
MoP-CH-33
Chen, D.
MoP-GR-10
Chen, D.
MoP-OD-20

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Chen, D.
MoP-OD-22
Chen, D.
ThP-CH-20
Chen, D. j.
ED1-4
Chen, D. j.
ED14-2
Chen, D. j.
ED14-4Chen, D. j.
ED3-2
Chen, D. j.
ED7-4
Chen, H.
MoP-ED-31
Chen, H.
MoP-ED-7
Chen, H.
MoP-OD-LN1
Chen, H.
OD3-5
Chen, H.
ThP-ED-2
Chen, H.
ThP-GR-5
Chen, H.
ThP-OD-18
Chen, I.
MoP-GR-27
Chen, J.
CH4-2
Chen, J.
CH4-7
Chen, J.
CH7-2
Chen, J.
GR8-1
Chen, J.
GR8-2
Chen, J.
MoP-GR-4
Chen, J.
ThP-CH-20
Chen, J.
ThP-GR-12
Chen, J.
ThP-OD-27
Chen, J.
ThP-OD-29
Chen, j. D.
TuP-ED-7
Chen, J. K.
CH4-7
Chen, J. K.
ED14-1
Chen, J. K.
ED15-4Chen, K.
CH4-4
Chen, K.
ED11-4Chen, K.
ED16-4Chen, K.
MoP-CH-4
Chen, K.
ThP-ED-5
Chen, L.
GR11-2
Chen, L.
MoP-OD-LN3
Chen, L.
TuP-GR-39
Chen, M.
OD10-4Chen, M.
TuP-OD-19
Chen, M.
TuP-OD-24
Chen, M. W.
ThP-CH-34
Chen, P.
ThP-CH-3
chen, q.
MoP-GR-18
Chen, S.
ED3-7
Chen, S.
GR8-3
Chen, S.
TuP-ED-12
Chen, S.
TuP-ED-28
Chen, T.
CH4-4
Chen, T.
CH4-7
Chen, T.
ED15-4Chen, W.
GR14-4Chen, W.
JT1-2
Chen, W.
MoP-CH-LN2
Chen, W.
MoP-ED-14
Chen, W.
MoP-OD-2
Chen, X.
MoP-ED-13
Chen, X.
MoP-ED-28
Chen, X.
MoP-OD-LN1
Chen, X.
TuP-ED-34
Chen, Y.
ED16-2

Chen, Y.
LN1-1
Chen, Y.
LN1-2
Chen, Y.
MoP-GR-1
Chen, Y.
MoP-OD-17
Chen, Y.
OD3-2
Chen, Y.
ThP-CH-3
Chen, Y.
ThP-ED-28
Chen, Y.
TuP-CH-32
Chen, Y.
TuP-GR-28
Chen, Y.
TuP-OD-6
Chen, Y. Z.
GR2-1
Chen, Z.
JT1-2
Chen, Z.
MoP-OD-2
Chen, Z.
OD2-1
Chen, Z.
ThP-GR-6
Cheng, S. T.
ThP-CH-LN1
Cheng, Y.
CH4-7
Cheng, Y.
ED11-4Cheng, Y.
MoP-GR-35
Cheng, Y.
ThP-ED-5
Cheng, Y.
ThP-OD-LN3
Chenot, S.
GR14-1
Chenot, S.
MoP-ED-12
Chenot, S.
OD10-2
Chenot, S.
TuP-CH-34
Cheong, H.
LN2-3
Chettri, D.
MoP-GR-3
Chettri, D.
TuP-ED-21
Cheung, Y.
OD12-7
Cheung, Y.
ThP-OD-21
Chevillard, A.
CH14-3Chevillard, A. ThP-CH-35
Chèze, C.
CH5-1
Chiang, T.
ThP-CH-3
Chiba, H.
TuP-OD-10
Chichibu, F. S.
CH12-3Chichibu, F. S.
CH5-4
Chichibu, F. S.
CH6-1
Chichibu, F. S.
CH6-3
Chichibu, F. S.
CH9-2
Chichibu, F. S.
OD13-1Chichibu, F. S.
OD13-3Chichibu, F. S. ThP-GR-16
Chikyow, T.
MoP-CH-32
Chiu, C.
MoP-ED-7
Chiu, C.
MoP-OD-LN3
Chizaki, M.
CH15-3Chlipala, M.
OD11-3Cho, H.
OD1-5
Cho, J.
MoP-ED-24
Cho, K.
TuP-ED-32
Cho, K. H.
GR6-1
Cho, K. H.
OD6-3
Cho, M.
CH4-3
Cho, M.
OD9-1
Cho, S.
MoP-ED-31
Cho, Y.
LN2-4
Cho, Y.
MoP-CH-LN1
Cho, Y.
ThP-CH-22
Cho, Y.
TuP-GR-LN2
180

Choi, C.
MoP-GR-30
Choi, G.
MoP-GR-44
Choi, G.
TuP-OD-3
CHOI, H.
MoP-CH-2
Choi, H.
MoP-OD-3
Choi, H.
OD12-7Choi, H.
ThP-OD-21
Choi, J.
TuP-ED-14
Choi, L.
CH12-5Choi, M.
LN2-4
Choi, M.
MoP-CH-LN1
Choi, S.
MoP-GR-30
Choi, S.
OD10-1Choi, W.
ThP-ED-26
Choi, Y.
ThP-ED-21
CHOUBEY, B. MoP-OD-21
Chow, C. Y.
CH10-1
Chow, C. Y.
GR17-1
Chow, Y.
OD14-5
Chow, Y.
OD14-6
Chow, Y.
OD4-2
Chowdhury, S.
ED10-2
Chowdhury, S.
ED15-2
Chowdhury, S.
ED8-1
Chrétien, P.
CH14-3Chrétien, P.
ThP-CH-35
Christen, J.
CH13-2Christen, J.
CH13-4
Christen, J.
CH3-2
Christen, J.
TuP-GR-7
Chuan, T. K.
ThP-ED-11
Chugenji, F.
TuP-OD-15
Chung, B. R.
ThP-ED-21
Chung, S.
ED13-3
Chung, S.
ED9-4
Church, A. S.
CH16-3Chyi, J.
MoP-GR-27
Cibié, A.
JT1-1
Cibié, A.
OD15-2
Ciechanowicz, P.
GR14-3Ciechanowicz, P.
MoP-GR-39
Ciers, J.
OD5-5
Ciers, J.
OD5-6
Ciers, J.
TuP-OD-25
Cipro, R.
OD7-3
Cizek, J.
GR5-2
Clymore, C.
ED9-7-LN
Coenen, T.
ThP-CH-7
Cohen, T.
LN2-5
Collaert, N.
GR11-1
Collazo, R.
ED2-2
Collazo, R.
ED7-5
Collazo, R.
GR3-1
Collazo, R.
GR4-5
Collazo, R.
GR6-7
Collier, A.
ThP-ED-7
Collier, A.
TuP-CH-13
Collins, H.
ED9-7-LN
Concordel, A.
TuP-GR-33

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Contreras, S.
ED16-5Contreras, S.
MoP-ED-20
Contreras, S.
TuP-CH-26
Cooper, D.
CH17-5
Cooper, D.
JT1-1
Corbett, B.
MoP-OD-15
Corbett, B.
OD13-6
Cordier, Y.
ED16-5
Cordier, Y.
GR17-4
Cordier, Y.
MoP-ED-12
Cordier, Y.
MoP-ED-20
Cordier, Y.
TuP-CH-26
Cordier, Y.
TuP-CH-34
Cornejo, G. R. MoP-OD-19
Cornwell, D.
MoP-ED-31
Coulon, P.
JT1-1
Coulon, P.
ThP-CH-1
Coulon, P.
ThP-GR-38
Couraud, L.
CH14-3Courville, A.
MoP-GR-12
Cros, A.
CH8-5
Cros, A.
TuP-CH-12
Cui, X.
CH16-2
Cui, X.
OD11-5
Culbertson, C. J.
CH5-3
Culbertson, C. J.
CH5-5
Culbertson, C. J. TuP-CH-7
Czap, H.
MoP-ED-26
Czernecki, R.
GR5-2
Czernecki, R.
GR5-6
Czernecki, R.
ThP-CH-15
Czernecki, R.
TuP-GR-18
Czerner, M.
MoP-CH-30― D ―Dąbrowska, K. A. CH12-4
Dąbrowska, K. A. GR16-6
Dąbrowska, K. A.
MoP-ED-32
Dąbrowska, K. A.
MoP-GR-31
Dadgar, A.
CH13-2
Dadgar, A.
CH13-4
Dadgar, A.
CH2-2
Dadgar, A.
CH3-2
Dadgar, A.
TuP-ED-23
Daeumer, A. M.
CH4-3
Dai, J.
MoP-ED-15
Dai, J.
ThP-ED-22
Dai, Q.
MoP-ED-4
Dai, X.
MoP-ED-18
Dai, Y.
GR7-2
Dalmau, R.
GR15-6
Dalmau, R.
TuP-CH-24
Damilano, B.
GR10-3Damilano, B. MoP-OD-19
Damilano, B.
TuP-CH-34
Dammann, M.
LN1-4
Dang, K.
LN1-7
Darakchieva, V.
ED7-3
Darakchieva, V.
GR7-4

Darakchieva, V.
GR8-2
Darakchieva, V.
GR8-4
Darakchieva, V. MoP-CH-29
Darakchieva, V. ThP-CH-24
Darakchieva, V. ThP-CH-25
Darakchieva, V. ThP-GR-37
Darakchieva, V. TuP-CH-6
DAUDIN, B.
OD6-5
Daudin, B.
TuP-GR-33
David, A.
CH10-1David, A.
PL-6
Davies, W. D.
TuP-CH-33
De Martino, P.
OD15-2De Mello, R. S. ThP-GR-39
De Pieri, F.
ED14-5
De Pieri, F.
ED14-6
De Santi, C.
CH4-1
De Santi, C.
ED14-5
De Santi, C.
ED14-6
De Santi, C.
ED3-3
De Santi, C.
OD13-4
De Vasconcellos Lourenco,
R.
GR3-4
De Vasconcellos Lourenço,R.
MoP-CH-6
Debald, A.
ThP-ED-16
Decoutere, S.
CH7-7
Decoutere, S.
ED1-2
Decoutere, S.
ED3-3
Decoutere, S.
ThP-GR-18
Deki, M.
ED1-3
Deki, M.
ED9-6
Del Fiol, A.
CH4-1
Delage, S.
LN2-8
Delgado Carrascon, R.
ED7-3
Delphan, A.
CH13-5
Delpuech, N.
LN2-8
Den Hertog, M.
GR17-6
Den Hertog, M.
OD9-2
Denaix, L.
CH17-5
DenBaars, P. S.
GR3-5
DenBaars, P. S. MoP-CH-20
Denbaars, P. S.
OD3-3
DenBaars, P. S.
OD4-6
DenBaars, P. S. TuP-OD-4
DenBaars, S.
OD14-2
DenBaars, S.
OD14-6
DenBaars, S.
OD4-2
Deng, C.
JT1-2
Deng, C.
MoP-OD-2
Deng, G.
ThP-ED-33
Deng, K.
CH7-3
Deng, K.
ED10-4Deng, K.
ED12-5
Deng, L.
MoP-ED-1
Desrat, W.
LN2-5
Desrat, W.
OD10-1
Detchprohm, T.
CH4-3
Detchprohm, T.
ED4-6
181

Detchprohm, T.
OD9-1
Detchprohm, T. ThP-OD-23
Deura, M.
MoP-CH-24
Deura, M.
ThP-GR-24
Deura, M.
ThP-GR-28
Deura, M.
TuP-CH-15
Deura, M.
TuP-GR-17
Deura, M.
TuP-GR-21
Deura, M.
TuP-GR-37
Deurzen, V. L.
LN1-1
Develay, V.
OD16-1
Devi, A.
TuP-ED-8
Dhar, S.
MoP-OD-23
Dhora, A.
GR8-4
Di Paola, M. D.
CH10-2Diez, S.
ED13-2
Ding, F.
OD10-1
Ding, N.
ThP-ED-22
Dinh, D.
JT3-1
Dinh, D.
TuP-GR-LN4
Dinh, V. D.
LN2-7
Divinyi, A.
GR7-4
Dluzewski, P.
LN2-8Dłużewski, P.
ThP-CH-12
Do, Y.
ThP-OD-LN1
Do, Y.
ThP-OD-LN2
Dobročka, E.
ED16-3
Dodson, G.
LN2-2
Doi, T.
ThP-CH-17
Doi, T.
ThP-GR-4
Dojo, H.
CH1-2
Dojo, H.
OD9-3
Doko, Y.
MoP-GR-12
Dolgashev, V. A.
OD9-1
Domagala, Z. J. ThP-CH-18
Dong, B.
JT1-2
Dong, B.
MoP-OD-2
Dong, Z.
OD10-2Dooley, J.
GR16-3
Doolittle, A.
GR7-6
Doolittle, A. W.
CH2-1
Doolittle, A. W.
ED13-7
Doolittle, A. W.
GR13-4
Doolittle, A. W.
GR18-2
Doradzinski, R. MoP-GR-33
Döring, P.
LN1-4
Douma, M.
OD15-4
Doustipour, F.
GR14-2Doyennette, L.
OD16-1
Driad, R.
CH2-4
Driad, R.
LN1-4
Driad, R.
MoP-ED-26
Drury, D.
ED15-2
Du, H.
CH14-5Du, H.
ED8-3
Du, H.
ThP-ED-9
Du, H.
ThP-ED-LN1
Du, X.
ED8-4
Du, Y.
MoP-CH-21
Dubroka, A.
CH2-2

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Dubrovskii, V. MoP-GR-37
Duelk, M.
OD12-3
Dupré, L.
JT1-1
Dupré, L.
MoP-OD-7
Dupré, L.
ThP-CH-1
Dupuis, C.
ThP-GR-40
Dupuis, D. R.
CH4-3
Dupuis, D. R.
ED4-6
Dupuis, D. R. ThP-OD-23
Dupuis, R.
OD9-1
DURAND, C.
JT2-3
Durand, C.
ThP-GR-39
Durand, C.
ThP-OD-11
Duraz, J.
JT2-3
Dussaigne, A.
GR10-3
Dussaigne, a. MoP-CH-10
Dussaigne, A.
MoP-OD-7
Dussaigne, A.
OD15-4
Dussaigne, A.
ThP-CH-1
DUSSAIGNE, A. TuP-GR-2
Dycus, H. J.
GR6-7
Dyer, D.
CH16-3― E ―Eastman, A. J. ThP-GR-20
Ebata, K.
CH11-4
Ebata, K.
CH14-6
Eblabla, A.
ThP-ED-7
Eblabla, A.
TuP-CH-13
Edgar, H. J. MoP-CH-LN3
Edo, M.
CH6-1
Edo, M.
ED5-3
Edo, M.
ED5-4
Edwards, R. P. MoP-CH-5
Egawa, T.
ED1-5
Egawa, T.
ED6-2
Egawa, T.
ED9-3
Egawa, T.
MoP-OD-18
Egawa, T.
MoP-OD-LN2
Egawa, T.
TuP-ED-25
Ehrler, J.
ThP-ED-16
Ehrler, J.
ThP-ED-3
Ehrler, J.
TuP-ED-23
Eichler, S.
MoP-GR-33
Eickhoff, M.
ThP-CH-26
Einfeldt, S.
GR6-1
Einfeldt, S.
OD1-5
Einfeldt, S.
OD6-1
Einfeldt, S.
OD6-3
Ekielski, M.
ED4-2
Ekielski, M.
ThP-ED-14
El Amrani, M.
GR17-4
El Badaoui, S.
JT1-1
El Rammouz, H.
GR17-4
El Rammouz, H.MoP-ED-30
Elgaid, K.
ThP-ED-7
Elgaid, K.
TuP-CH-13
Elhagali, O. I.
ED10-5
Elias, C.
TuP-CH-21
Eliáš, P.
TuP-GR-45
Elm, T. M.
ED16-1

Elm, T. M.
ThP-CH-26
Elwaradi, R.
MoP-ED-12
Enayati, H.
ThP-GR-21
Encomendero Risco, J.
LN1-6
Encomendero, J.
CH2-5
Encomendero, J.
CH8-6
Encomendero, J.
ED15-3
Encomendero, J.
LN1-2
Encomendero, J.
LN1-5
Endo, M.
CH15-5Endoh, A.
OD1-4
Eng, J. H. J.
OD10-5
Eng, J. J.
OD10-2Engel, Z.
CH2-1
Engel, Z.
GR13-4Engel, Z.
GR18-2
Enomoto, S.
CH14-4
Enslin, J.
GR2-5
Enslin, J.
OD5-6
Eo, Y.
ThP-OD-LN1
Eo, Y.
ThP-OD-LN2
Eriguchi, K.
ThP-GR-15
Erus, I. D.
TuP-ED-36
Ewing, J.
GR3-5
Ewing, J.
MoP-CH-20
Ewing, J.
OD4-6
Eymery, J.
GR10-4
Eymery, J.
ThP-OD-11― F ―Faber, S.
TuP-ED-13
Fahle, D.
ThP-GR-18
Fahle, D.
TuP-GR-43
Fairclough, M. S. CH14-2
Fairclough, M. S. CH17-2
Fan, J.
ED12-5
Fan, J.
MoP-ED-18
Fan, Q.
ThP-GR-30
Fan, Q.
TuP-OD-8
Fan, S.
CH1-4
Fan, Y.
TuP-ED-LN3
Farrell, P.
CH11-3
Farzana, E.
ED2-4
Farzana, E.
ED3-1
Fąs, T.
CH12-4
Favero, D.
CH4-1
Fay, P.
ED13-4
Fedeli, F.
OD15-4
Feduniewicz-Zmuda, A.
GR11-3
Feduniewicz-Zmuda, A.
OD11-3
Feezell, D.
OD4-1
Fei, J.
JT1-2
Feigelson, N. B.
ED12-1
Feigelson, N. B.
LN1-3
Feil, M. N.
CH2-4
Feneberg, M.
CH2-2
Feng, H.
OD11-2
FENG, M.
OD10-6
182

Feng, S.
CH4-4Feng, S.
CH4-7
Feng, S.
ED15-4Feng, X.
MoP-ED-17
Ferhatovic, A.
OD12-3Ferrand-Drake del Castillo,
M. R.
CH7-2
Ferrand-Drake Del Castillo,
R.
GR7-4
Ferrandis, P.
ED16-5
Ferrandis, P.
MoP-ED-12
Ferrandis, P.
MoP-ED-20
Ferrandis, P.
TuP-CH-26
Ferret, P.
OD15-4Fichtner, S.
GR13-5Fichtner, S.
GR13-6
Fijalkowski, M.
CH6-4
Fijalkowski, M.
GR3-3
Fijalkowski, M.
GR8-7
Fijalkowski, M. MoP-CH-18
Fijalkowski, M. MoP-CH-19
Fijalkowski, M. MoP-GR-36
Fijalkowski, M. TuP-GR-8
Filoche, M.
OD1-3
Filoche, M.
TuP-OD-29
Fimland, O. B. TuP-GR-11
Finn, R.
CH11-3Finn, R.
MoP-OD-15
Finot, S.
JT2-3
Finot, S.
ThP-OD-11
Fischer, D.B. P. MoP-ED-33
FITZGERALD, E.
MoP-GR-24
Flemish, J.
OD4-1
Flissikowski, T.
CH5-1
Floriduz, A.
ED2-3
Floyd, R.
ED10-6
Floyd, R.
ED4-3
Floyd, R.
GR8-5
Fornasier, M.
ED14-5Fornasier, M.
ED14-6
Fossard, F.
MoP-GR-25
Fournel, F.
ThP-GR-LN4
Frayssinet, E. MoP-ED-12
Frayssinet, E.
OD16-1
Fredes, P.
TuP-OD-13
Fregolent, M.
CH4-1
Freitas Jr., A. J.
CH5-3
Freitas Jr., A. J.
CH5-5
Freitas, A. J.
TuP-CH-7
Freitas, J.
GR5-4
Frentrup, M.
CH14-2
Frentrup, M.
CH17-2
Frentrup, M.
MoP-CH-14
Friedrich, J.
GR15-5Friedrich, J.
ThP-CH-11
Frühauf, D.
MoP-CH-28
Fu, W.
MoP-CH-2
Fu, W.
MoP-OD-3
Fu, W.
OD12-7

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Fu, W.
ThP-OD-21
Fugallo, G.
OD10-1
Fuji, K.
CH17-6
Fujii, K.
GR17-5
Fujii, K.
MoP-GR-13
Fujii, K.
MoP-GR-7
Fujii, K.
MoP-GR-LN1
Fujii, K.
TuP-ED-5
Fujii, K.
TuP-GR-25
Fujii, M.
MoP-CH-8
Fujii, M.
TuP-CH-3
Fujii, T.
MoP-CH-24
Fujii, T.
ThP-GR-28
Fujii, T.
TuP-CH-15
Fujii, T.
TuP-GR-37
Fujikawa, S.
OD1-4
Fujikawa, S.
TuP-OD-15
Fujikura, H.
CH2-3
Fujikura, H.
CH5-2
Fujikura, H.
GR1-1
Fujikura, H.
MoP-ED-23
Fujikura, H.
MoP-GR-41
Fujikura, H.
ThP-CH-21
Fujikura, H.
ThP-CH-4
Fujimoto, N.
GR1-4
Fujimoto, N.
MoP-GR-34
Fujimoto, N.
ThP-GR-14
Fujimoto, T.
GR1-1
Fujioka, H.
GR13-2
Fujioka, H.
GR8-6
Fujioka, H.
GR9-1
Fujioka, H.
GR9-3
Fujioka, H.
GR9-4
Fujioka, H.
MoP-CH-26
Fujioka, H.
ThP-GR-22
Fujioka, K.
CH3-5
Fujisawa, T.
MoP-OD-18
Fujisawa, T. MoP-OD-LN2
Fujisawa, T.
OD9-4
Fujishiro, H.
OD1-4
Fujita, M.
MoP-CH-22
Fujita, M.
TuP-OD-18
Fujiwara, Y.
CH16-4
Fujiwara, Y.
GR5-5
Fujiwara, Y.
LN2-6
Fujiwara, Y.
MoP-GR-47
Fujiwara, Y.
OD2-4
Fukamachi, T.
OD9-4
Fukuda, M.
OD6-4
Fukuda, T.
MoP-CH-24
Fukui, T.
TuP-GR-24
Fukunaga, I.
OD11-4
Fukunaga, I.
OD8-3
Fukushige, S.
TuP-GR-23
Fukuyama, H.
MoP-GR-6
Funato, M.
CH1-2
Funato, M.
CH1-3
Funato, M.
CH3-5
Funato, M.
CH9-1
Funato, M.
GR10-1

Funato, M.
GR5-7
Funato, M.
OD14-4
Funato, M.
OD9-3
Funato, M.
TuP-GR-23
Funato, M.
TuP-GR-24
Furuhashi, I.
ThP-GR-17
Furuhashi, M.
ED1-5
Furukawa, M. TuP-ED-LN5
Furukawa, Y.
GR5-5
Furukawa, Y.
OD16-3Furusawa, Y.
LN2-3
Furusawa, Y. MoP-OD-28
Futagawa, N.
OD3-1
― G ―
Gale, A.
CH12-5
Gallagher, C. J.
ED4-5
Gallagher, J.
GR5-4
Galler, B.
OD4-4
Gan, L.
MoP-GR-LN3
Gandrothula, S. TuP-OD-4
Ganguly , S.
ThP-ED-LN3
Ganguly, S.
MoP-ED-19
Ganguly, S.
ThP-ED-12
Ganguly, S.
ThP-OD-13
Ganguly, S.
TuP-ED-35
Ganguly, S.
TuP-OD-27
Gao, G.
ThP-ED-9
Gao, G.
ThP-ED-LN1
Gao, H.
TuP-GR-32
Gao, K.
CH13-2gao, p.
MoP-GR-18
Gao, W.
OD10-2Gao, W.
OD10-5Gao, X.
GR2-1
Gao, Y.
MoP-GR-5
Gao, Y.
ThP-GR-3
Gao, Z.
ED14-5Gao, Z.
ED14-6
Gao, Z.
ThP-GR-18
Gao, Z.
TuP-GR-43
Garces-Schröder, M.
TuP-ED-13
Garcés-Schröder, M.
MoP-OD-27
Garcés-Schröder, M.
TuP-OD-5
García, Q. C.
GR3-1
Garg, G.
ThP-ED-12
Garro, N.
CH8-5
Garro, N.
TuP-CH-12
GASSILLOUD, R.
TuP-GR-2
Gaudin, G.
ThP-GR-LN4
Gautier, S.
ED15-5Gautier, S.
GR16-7
Gavrila, R.
MoP-GR-26
Ge, W.
CH15-1
Ge, W.
CH8-1
Ge, W.
OD2-1
Ge, W.
ThP-CH-36
183

Ge, W.
TuP-ED-28
Ge, W.
TuP-OD-16
Gee, S.
OD14-2
Gee, S.
OD3-3
Gee, S.
TuP-OD-4
Geelhaar, L.
GR14-2
Geelhaar, L.
LN2-7
Geelhaar, L.
ThP-GR-38
Geelhaar, L.
TuP-GR-LN4
Geens, K.
CH7-7
Genath, H.
TuP-ED-37
Gergaud, p.
MoP-CH-10
Gergaud, P.
ThP-CH-10
Gherasoiu, I.
TuP-CH-28
Ghosh, A.
CH2-1
Ghosh, K.
MoP-OD-21
Ghosh, S.
CH4-6
Ghosh, S.
MoP-CH-14
GIANESELLO, F. TuP-GR-2
Gibasiewicz, K.
GR10-2Gibasiewicz, K.
OD16-2Gibasiewicz, K.
OD8-5
Gibasiewicz, K. ThP-OD-25
Gil, B.
GR14-1
Gil, B.
GR16-2
Gil, B.
LN2-5
Gil, B.
MoP-CH-LN3
Gil, B.
OD10-1
Gil, B.
ThP-CH-LN1
Gil, B.
TuP-CH-21
Gil, E.
MoP-GR-37
Gilet, P.
OD7-3
Gilles, P.
ThP-GR-LN4
Gimbel, M. N. TuP-GR-39
Giroud, S.
ThP-GR-LN4
Gładysiewicz, M.
TuP-OD-26
Glaser, C.
ED4-3
Goel, N.
ThP-ED-12
Goel, N.
ThP-ED-LN3
GOGNEAU, N.
CH14-3Gogneau, N. MoP-CH-LN1
Gogneau, N.
ThP-CH-35
Gogneau, N.
ThP-GR-40
Goldhahn, R.
CH2-2
Gómez Ruiz, M.
GR14-2Gómez Ruiz, M. MoP-CH-3
Gómez Ruiz, M.
TuP-GR-LN4
Gong, C.
MoP-ED-6
Gorantla, S.
CH5-7
Gorantla, S.
GR14-3
Gordon, M.
OD4-6
Goshonoo, K.
OD2-2Goto, H.
OD1-1
Goto, K.
GR18-4
Goto, K.
LN2-1
Goto, N.
ThP-GR-28
Gotow, T.
TuP-GR-20
Gou, S.
ThP-OD-9

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Gowrisankar, A. MoP-ED-8
Gowrishankar, A. TuP-GR-30
Grabianska, K.
GR12-2
Grabianska, K.
GR12-3
Grabianska, K.
GR12-7
Grabowski, M.
CH16-5
Grabowski, M.
GR5-2
Grabowski, M. ThP-CH-15
Grabowski, M. TuP-GR-18
Graff, A.
CH2-4
Graham, S.
GR7-6
Gramsch, E.
TuP-OD-13
Grandjean, N.
CH10-2Grandjean, N.
CH10-3
Grandjean, N.
CH13-5Grandjean, N.
CH3-1
Grandjean, N. MoP-OD-29
Grandjean, N.
OD4-4Grandjean, N.
TuP-OD-6
Grandpierron, F.
ED6-4
Grandusky, J.
GR15-3
Grandusky, J.
TuP-GR-1
Granka, E.
GR11-3
Graupeter, S.
OD5-5
Graupeter, S.
OD5-6
Graupeter, S.
OD6-1
Graupeter, S.
TuP-OD-25
Gregušová, D.
ED16-3
Gregušová, D. TuP-GR-45
Grenier, A.
GR10-3
Grenier, A.
MoP-OD-14
Grenier, V.
JT2-3
Grenier, V.
ThP-OD-11
Gribisch, P.
ED7-3
Gribisch, P.
GR8-4
Grieger, L.
CH8-2
Grieger, L.
MoP-GR-38
Grigoletto, M.
OD6-1
Grodzicki, M.
CH5-7
Grodzicki, M. MoP-CH-11
Grodzicki, M.
TuP-CH-11
Gromovyi, M.
OD16-1
Großer, A.
MoP-GR-33
Grosso, F. B.
TuP-CH-33
Grümbel, J.
CH2-2
Grzanka, E.
CH16-5
Grzanka, E.
GR5-2
Grzanka, E.
GR5-6
Grzanka, E.
ThP-CH-12
Grzanka, E.
ThP-CH-15
Grzanka, E.
ThP-CH-18
Grzanka, E.
TuP-GR-18
Grzanka, E.
TuP-GR-41
Grzanka, E.
TuP-OD-22
Grzanka, S.
GR10-2
Grzanka, S.
GR5-6
Grzanka, S.
JT1-4
GRZANKA, S.
OD12-4
Grzanka, S.
OD16-2
Grzanka, S.
ThP-CH-15

Grzanka, S.
ThP-OD-25
Grzanka, S.
TuP-GR-18
Grzanka, S.
TuP-OD-22
Grzegory, I.
ED4-2
Grzegory, I.
GR16-2
Grzegory, I.
MoP-ED-34
Grzegory, I.
ThP-ED-14
Gu, P.
JT1-5
Gu, P.
JT2-1
Gu, P.
OD3-6
Gu, X.
ThP-GR-30
Gu, X.
TuP-OD-8
Gu, Z.
MoP-CH-27
Gucmann, F.
ED16-3
Gucmann, F.
TuP-GR-45
Gudelli, V.
TuP-OD-23
Gueugnot, A.
GR17-4
Guha Roy, P.
MoP-OD-9
Guidry, M.
ED9-7-LN
Guilhabert, B. MoP-CH-14
Guillet, T.
OD16-1
Guillet, T.
TuP-CH-34
Guimera Coll, P.
GR15-2
Guina, M.
ThP-CH-34
Gujrati, R.
GR16-7
Gund, V.
LN1-1
Gundimeda, A.
CH17-2
Gunning, P. B.
LN1-3
Guo, C.
MoP-OD-1
Guo, C.
TuP-OD-17
Guo, F.
CH7-3
Guo, H.
TuP-ED-7
Guo, j.
MoP-ED-2
Guo, j.
MoP-ED-9
Guo, J.
ThP-ED-10
Guo, J.
ThP-ED-33
Guo, J.
ThP-ED-8
Guo, L.
TuP-CH-LN2
Guo, p. S.
TuP-GR-28
Guo, S.
OD2-1
Guo, W.
GR7-2
Guo, W.
ThP-CH-7
Guo, y.
GR6-5
Guo, Y.
JT2-5
Guo, Y.
OD7-4
Guo, Y.
TuP-GR-4
Guo, Y.
TuP-OD-11
Gupta, D.
TuP-GR-11
Gustafsson, A. ThP-GR-37
Guttmann, M.
GR6-1
Guttmann, M.
OD5-3
Guttmann, M.
OD6-1
Guttmann, M.
OD6-3
Guziewicz, M. MoP-ED-34
Gwoziecki, R. ThP-CH-19― H ―Haas, H.
GR17-4
Haas, H.
MoP-ED-30
Haberland, K.
GR2-5
Hadden, J.
OD10-3184

Hagedorn, S.
GR6-1
Hagedorn, S.
OD6-1
Haglund, Å.
OD5-5Haglund, Å.
OD5-6
Haglund, Å.
OD6-1
Haglund, Å.
PL-5Haglund, Å.
TuP-OD-25
Hahm, M.
TuP-OD-LN2
Hahn, H.
CH7-7
Hahn, H.
ED7-1
Hahn, H.
GR11-1
Hahn, H.
ThP-GR-18
Hahn, H.
TuP-GR-43
Hähnlein, B.
MoP-CH-28
Hai, H.
ED3-2
Hainke, M.
GR15-5
Hajdel, M.
OD12-5
Hajdel, M.
OD12-6
Hakkarainen, T. ThP-CH-34
Halfaya, Y.
ED15-5
Halle, T.
TuP-GR-7
Halsall, P. M.
CH16-3
Hamada, K.
GR12-6
Hamaguchi, T.
OD3-1
Hamasaki, K.
GR1-4
Hamasaki, K. MoP-GR-34
Hamashima, N. TuP-OD-18
Hamaya, K.
MoP-GR-47
HAMDAOUI, Y.
ED7-2
Hamdaoui, Y. MoP-GR-43
Hamdaoui, Y.
TuP-GR-43
Hamwey, R.
ED9-7-LN
Hamwey, R.
GR11-5
Han, D.
LN2-3
Han, H.
CH7-7
Han, S.
MoP-CH-4
Han, T.
MoP-GR-35
Han, T.
MoP-GR-4
Han, Y.
MoP-GR-LN3
Han, Z.
MoP-OD-25
Han, Z.
TuP-ED-33
Hanada, T.
ThP-GR-43
Hanasaku, K.
CH17-6
Hanasaku, K.
GR17-5
Hanasaku, K.
TuP-ED-5
Hanasaku, K.
TuP-GR-25
Hangleiter, A.
GR3-4
Hangleiter, A.
MoP-CH-6
Hanlin, X.
ThP-ED-11
Hanrahan, B.
ED15-2
Hänschke, D.
GR15-4
Hanser, D.
TuP-GR-27
Hao, L.
ED8-3
Hao, L.
ThP-ED-9
Hao, L.
ThP-ED-LN1
Hao, L.
TuP-ED-7
Hao, Y.
CH4-5
Hao, Y.
CH9-5
Hao, Y.
ED11-3
Hao, Y.
ED8-3

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Hao, Y.
LN1-7
Hao, Y.
MoP-ED-1
Hao, Y.
MoP-ED-13
Hao, Y.
MoP-ED-3
Hao, Y.
MoP-GR-17
Hao, Y.
MoP-GR-5
Hao, Y.
MoP-OD-25
Hao, Y.
OD13-5
Hao, y.
ThP-ED-24
Hao, Y.
ThP-ED-28
Hao, Y.
ThP-ED-30
Hao, Y.
ThP-ED-9
Hao, Y.
ThP-ED-LN1
Hao, Y.
ThP-GR-23
Hao, Y.
ThP-GR-3
Hao, Y.
TuP-CH-27
Hao, Y.
TuP-CH-LN2
Hao, Y.
TuP-ED-31
Hao, Y.
TuP-ED-33
Hao, Y.
TuP-ED-LN3
Hao, Z.
ED2-3
Hao, Z.
MoP-GR-LN3
Hara, K.
CH12-3Hara, K.
MoP-GR-29
Hara, M.
OD6-4
Harada, T.
GR9-3
Harikumar, A. MoP-OD-14
Harmand, J.
CH14-3Harmand, J.
MoP-GR-37
Harmand, J.
ThP-GR-40
Harnisch, K.
TuP-GR-7
Harrouche, K.
ED11-2Harrouche, K.
ED6-4
Hartmann, C.
GR15-4
Hartmann, C. ThP-GR-LN3
Hartmann, J.
GR4-6
Hartmann, J.
JT3-5
Hartmann, J.
MoP-CH-13
Hartmann, J.
MoP-CH-16
Hartmann, J.
MoP-GR-23
Hartmann, J. MoP-OD-27
Hartmann, J.
TuP-ED-13
Hartmann, J.
TuP-OD-5
Harvey, T.
ThP-GR-36
HASAN, M.
ED10-6
HASAN, M.
GR7-3
HASAN, M.
GR8-5
Hase, E.
GR1-5
Hase, E.
GR2-4
Hasegawa, K.
ThP-ED-31
Hasegawa, N.
MoP-GR-9
Hasegawa, N.
OD2-3
Hasegawa, N.
OD2-5
Hasegawa, R.
MoP-GR-9
Hasenöhrl, S.
ED16-3
Hasenöhrl, S.
TuP-GR-45
Hashimoto, A. MoP-GR-12
Hashimoto, R. TuP-ED-18
Hashimoto, T.
CH4-3
Hashimoto, T.
CH5-3

Hashimoto, T.
GR9-5
Hashimoto, Y. TuP-GR-26
Hashizume, T.
ED5-1
Hata, M.
GR2-3
Hatakeyama, Y.
CH6-5
Hattori, K.
GR6-2
Hattori, K.
MoP-GR-9
Hattori, K.
OD5-4
Hattori, S.
CH15-4
Hattori, S.
TuP-GR-17
Hattori, S.
TuP-GR-21
Hattori, Y.
JT1-3
Hattori, Y.
MoP-ED-21
Hattori, Y.
OD7-5
Hattori, Y.
ThP-GR-31
Hattori, Y.
ThP-OD-10
Hattori, Y.
ThP-OD-20
Hattori, Y.
TuP-ED-15
Hatui, N.
ED9-7-LN
Hatui, N.
GR11-5
Hauer Vidal, D.
OD5-3
Hayakawa, S.
CH13-3
Hayama, J.
GR4-4
Hayasaki, M.
TuP-GR-38
Hayashi, H.
CH9-3
Hayashi, K.
OD3-1
Hayashi, S.
OD9-4
Hayashi, Y.
CH11-5
Hayashi, Y.
CH17-1
Hayashi, Y.
CH5-6
Hayashi, Y.
OD15-5He, J.
MoP-GR-35
He, R.
MoP-OD-13
He, R.
OD10-5
He, X.
MoP-ED-17
He, Y.
MoP-ED-3
Hecker, D.
ThP-GR-29
Hecker, D.
TuP-GR-36
Heer, d. W.
MoP-GR-25
Heiliger, C.
MoP-CH-30
Heitmann, J.
MoP-ED-33
Helm, C.
MoP-CH-28
Hemmingsson, C.
MoP-GR-32
Henn, M.
ED5-6
Henning, P.
MoP-CH-6
Heo, J.
MoP-GR-46
Heo, Y.
MoP-GR-45
Heo, Y.
MoP-GR-46
Hergert, H.
ED16-1Hernandez, R.
JT2-3
Hertz, E.
JT2-3
Heuken, M.
ED7-1
Heuken, M.
ThP-ED-16
Heuken, M.
ThP-ED-3
Heuken, M.
ThP-GR-18
Heuken, M.
TuP-GR-43
Hickman, A.
LN1-5
Hien, Q. T.
MoP-GR-27
Highland, J. M. ThP-GR-20
185

Higo, A.
TuP-GR-40
Hikima, T.
OD11-4
Hikosaka, T.
ED14-3
Hikosaka, T.
ED3-5
Hilt, O.
CH4-1
Hilt, O.
CH8-5
Hilt, O.
ED7-1
Hilt, O.
MoP-GR-43
Hilt, O.
TuP-CH-12
Himeno, K.
CH13-6
Himeno, K.
CH9-3
Himeno, K.
TuP-CH-3
Hinz, M. A.
ThP-GR-29
Hinz, M. A.
TuP-GR-36
Hirama, K.
MoP-GR-28
Hirano, K.
CH17-3
Hirano, K.
CH8-4
Hirata, T.
ED5-5
Hirayama, H.
CH13-6Hirayama, H.
JT2-2
Hirayama, H.
LN2-5
Hirayama, H. MoP-GR-13
Hirayama, H.
OD1-2
Hirayama, H.
OD1-4
Hirayama, H.
OD6-2
Hirayama, H.
OD6-4
Hirayama, H.
TuP-OD-13
Hirayama, H.
TuP-OD-15
Hirayama, H.
TuP-OD-19
Hiroki, M.
CH11-4
Hiroki, M.
ED13-6
Hiroki, M.
GR16-4Hiroshige, H.
TuP-ED-18
Hisyam, M.
MoP-GR-20
Hite, J.
GR5-4
Hite, J.
MoP-GR-42
Hite, J.
ThP-CH-29
Hite, K. J.
CH5-3
Hite, K. J.
ED12-1
Hite, K. J.
ED4-5
Hiura, S.
ThP-CH-34
Hjelmgren, H.
GR7-4
Hjort, F.
OD5-6
Ho, W.
CH16-1
Ho, W.
ED3-1
Ho, W.
OD14-5
Ho, Y. W.
GR17-1
Hobart, D. K.
ED12-1
Hobart, D. K.
ED4-5
Hobart, D. K.
LN1-3
Hofmann, M. D.
GR11-2
Hofmann, M. D. TuP-GR-39
Hofmann, P.
MoP-GR-33
Hogan, K.
GR15-3
Höjer, P.
ThP-CH-34
Holmes, M.
CH13-2
Holmes, M.
OD4-1
Holtz, P.
TuP-OD-LN1
Hommel, D.
CH5-7
Hommel, D.
GR14-3

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Hommel, D.
MoP-CH-11
Hommel, D.
MoP-GR-39
Hommel, D.
TuP-CH-11
Hommel, D.
TuP-CH-14
Honda, H.
GR4-2
Honda, H.
OD16-3
Honda, H.
OD16-4
Honda, H.
OD16-5
Honda, T.
OD7-2
Honda, T.
ThP-CH-31
Honda, T.
ThP-OD-12
Honda, T.
TuP-GR-14
Honda, T.
TuP-GR-38
Honda, Y.
ED1-3
Honda, Y.
ED9-6
Honda, Y.
GR13-2
Honda, Y.
GR1-4
Honda, Y.
GR5-1
Honda, Y.
MoP-GR-34
Honda, Y.
MoP-OD-28
Honda, Y.
OD13-1
Honda, Y.
OD13-2
Honda, Y.
OD5-1
Honda, Y.
ThP-ED-25
Honda, Y.
ThP-GR-14
Honda, Y.
TuP-GR-26
Honda, Y.
TuP-GR-29
Hong, Y.
ThP-ED-30
Honig, H.
MoP-CH-28
Hoormann, M.
JT3-5
Hoormann, M. MoP-CH-13
Höpfner, J.
GR6-1
Höpfner, J.
OD6-1
Höpfner, J.
ThP-CH-5
Horenburg, P.
MoP-CH-6
Horiai, T.
ThP-GR-43
Horibuchi, K.
OD13-1
Horikiri, F.
MoP-GR-41
Horikiri, F.
ThP-CH-21
Horita, M.
CH15-5
Horita, M.
CH15-6
Horita, M.
CH6-6
Horita, M.
CH7-1
Horita, M.
ThP-CH-28
Hoshi, T.
ThP-ED-15
Hoshina, Y.
OD3-1
Hoshino, K.
ThP-GR-32
Hospodkova, A.
GR5-2
Hou, B.
ED11-3
Hou, B.
ED3-6
Hou, B.
MoP-ED-22
Hou, B.
TuP-ED-2
Hou, Q.
MoP-CH-33
Hou, X.
CH1-4
Hou, X.
JT1-5
Hou, X.
JT2-1
Hou, X.
TuP-CH-1
Houzé, F.
CH14-3Houzé, F.
ThP-CH-35
Hrytsak, R.
GR5-2

Hrytsak, R.
TuP-GR-18
Hsia, J.
ED2-5
Hsiao, C.
TuP-GR-36
Hsiao, F.
OD11-1
Hsiao, Y.
ThP-OD-7
Hsieh, C.
MoP-ED-7
Hsieh, H.
GR14-4
Hsieh, W.
CH11-2
Hsin, Y.
MoP-ED-14
Hsu, C.
MoP-GR-32
Hsu, C.
TuP-OD-LN1
Hsu, H.
ThP-CH-3
Hsu, K.
GR13-3Hsu, K.
TuP-CH-5
Hsu, L.
ThP-OD-LN3
Hsue, S.
MoP-GR-27
Hu, c. T.
TuP-ED-7
Hu, J.
MoP-CH-27
Hu, J.
OD2-1
Hu, J.
ThP-OD-15
Hu, J.
TuP-GR-28
Hu, L.
OD12-2
Hu, M.
GR13-1
Hu, N.
MoP-OD-18
Hu, N.
MoP-OD-LN2
Hu, X.
MoP-OD-LN1
Hu, X.
OD3-5
Hu, X.
OD7-2
Hu, X.
ThP-GR-5
Hu, X.
ThP-OD-18
Hua, M.
CH4-7
Huang, C.
CH11-2
Huang, C.
TuP-ED-27
Huang, H.
MoP-ED-15
Huang, H.
ThP-ED-22
Huang, J.
OD2-1
Huang, L.
TuP-ED-30
Huang, S.
CH7-3
Huang, S.
ED10-4
Huang, S.
ED12-5Huang, S.
MoP-ED-18
Huang, S.
TuP-CH-8
Huang, S.
TuP-ED-38
Huang, T.
TuP-ED-27
Huang, Y.
ThP-CH-34
Huang, Y.
TuP-CH-8
Huang, Z.
TuP-GR-28
Huber, C.
CH4-1
Huber, C.
ED5-6
Huber, C.
ED7-1
Huo, L.
CH7-5
Hussain, K.
ED10-6
Hussain, K.
GR7-3
Hussain, K.
GR8-5
Hwang, I.
MoP-GR-30
Hwang, S.
TuP-OD-3
Hwang, S. J.
TuP-OD-2
Hyot, B.
GR10-3
HYOT, B.
TuP-GR-2
186― I ―Iba, N.
MoP-CH-32
Ibanez, A.
GR16-2Ibanez, A.
LN2-5
Ibanez, A.
ThP-CH-LN1
Ichikawa, S.
CH10-5
Ichikawa, S.
CH1-2
Ichikawa, S.
CH16-4
Ichikawa, S.
CH9-4
Ichikawa, S.
GR4-1
Ichikawa, S.
GR5-5
Ichikawa, S.
LN2-6
Ichikawa, S.
MoP-GR-47
Ichikawa, S.
OD2-4
Ichikawa, S.
OD9-3
Ichikawa, S.
ThP-CH-4
Ichikawa, T.
CH14-4
Ichikawa, Y.
ED14-7
Ide, T.
MoP-ED-27
Ide, T.
TuP-GR-20
Iguchi, H.
CH6-1
Iguchi, H.
ThP-CH-28
Ii, S.
JT1-3
Ii, S.
OD7-5
Ii, S.
OD9-4
Ii, S.
ThP-GR-31
Ii, S.
ThP-OD-10
Ii, S.
ThP-OD-20
Iida, D.
CH1-3
Iida, D.
CH1-4
Iida, D.
CH15-2Iida, D.
OD2-3
IIDA, D.
OD4-3
Iida, D.
OD8-1
Iida, D.
TuP-OD-1
Iizuka, M.
TuP-GR-42
Ikarashi, N.
CH6-2
Ikarashi, N.
ED5-2
Ikeda, H.
GR12-5
Ikeda, H.
GR1-3
Ikeda, H.
TuP-GR-9
Ikeda, K.
GR5-5
Ikeda, M.
GR15-3
Ikeda, M.
OD12-2
Ikejiri, K.
OD1-2
Ikejiri, K.
OD6-4
Ikejiri, K.
ThP-GR-15
Ikeyama, K.
ED5-8-LN
Im, K.
ThP-ED-32
Im, K.
ThP-ED-34
Imabayashi, H. ThP-CH-21
Imai, D.
CH14-4Imai, D.
TuP-CH-2
Imai, Y.
CH11-5
Imai, Y.
CH14-4Imai, Y.
CH5-6
Imanishi, M.
GR12-1
Imanishi, M.
GR12-6
Imanishi, M.
GR2-3
Imanishi, M.
MoP-GR-15

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Imanishi, M.
TuP-GR-12
Imanishi, M. TuP-GR-LN1
Imazawa, T.
ED1-5
Imokawa, K.
ThP-ED-20
Imoto, Y.
GR6-2
Imoto, Y.
GR6-6
Imoto, Y.
MoP-GR-9
Imoto, Y.
OD5-4
Imura, K.
MoP-GR-9
Imura, K.
OD2-3
Imura, K.
OD2-5
Imura, M.
MoP-CH-34
Imura, M.
MoP-GR-2
Ina, T.
ThP-ED-31
Inaba, H.
MoP-GR-2
Inaba, S.
JT1-3
Inaba, S.
OD7-5
Inaba, S.
ThP-GR-31
Inaba, S.
ThP-OD-10
Inaba, S.
ThP-OD-20
Inagaki, M.
ThP-ED-31
Inahara, D.
CH17-6
Inahara, D.
GR17-5Inahara, D.
TuP-ED-5
Inahara, D.
TuP-GR-25
Inai, K.
CH9-3
Inai, K.
MoP-CH-8
Inai, K.
TuP-CH-3
Inamoto, T.
ED5-3
Inerbaev, M. T.
CH1-5
Inoue, K.
ED10-3INOUE, S.
TuP-OD-12
Inoue, T.
GR1-1
Inoue, Y.
ThP-ED-25
Inoue, Y.
TuP-GR-26
Irekti, R. M.
MoP-ED-30
Isaac Maciel Garcia, G.
MoP-GR-3
Isemura, M.
GR2-3
Ishibashi, K.
ThP-GR-4
Ishibashi, S.
CH6-1
Ishibashi, S.
CH6-3
Ishiguro, H.
GR18-3Ishiguro, H.
OD13-1Ishiguro, H.
OD13-3Ishiguro, H.
TuP-OD-18
Ishiguro, M.
TuP-ED-18
Ishihara, T.
OD2-4
Ishii, R.
CH1-3
Ishii, R.
CH9-1
Ishii, R.
GR5-7
Ishii, S.
GR15-3Ishii, S.
TuP-GR-1
Ishikawa, F. MoP-CH-LN2
Ishikawa, F.
TuP-GR-40
Ishikawa, M.
OD10-7
Ishikawa, M.
TuP-OD-20
Ishikawa, Y.
CH17-3
Ishikawa, Y.
CH8-4
Ishinabe, T.
GR12-5Ishisone, K.
Ishitani, Y.
Ishitani, Y.
Isionemi, T.
Islam, A.
Islam, A.
Iso, K.
Iso, K.
Isoaho, R.
Isobe, Y.
Ithepalli, A.
Ito, K.
Ito, K.
Ito, M.
Ito, N.
Ito, T.
Itoh, T.
Ivanova, V.
Iwai, T.
Iwaisako, Y.
Iwaisako, Y.
Iwaisako, Y.
Iwaisako, Y.
Iwaisako, Y.
Iwaisako, Y.
Iwamoto, T.
Iwamoto, T.
Iwamoto, Y.
Iwanski, J.
Iwanski, J.
Iwański, J.
Iwasaki, S.
Iwasaki, S.
Iwata, N.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
IWAYA, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, M.
Iwaya, T.
Iwayama, S.
Iwayama, S.
Iwayama, S.
Iwayama, S.
Iwayama, S.
Iwinska, M.
187

ThP-GR-LN5
CH15-2
CH15-3
CH13-5
MoP-ED-24
TuP-OD-7
CH17-4
TuP-GR-9
ThP-CH-34
ED14-3
LN1-6
ED4-1
ED5-2
OD3-1
TuP-GR-26
ThP-GR-16
ED2-4
ThP-OD-3
OD6-4
JT2-2
OD1-2
OD1-4
OD6-2
OD6-4
TuP-OD-15
MoP-CH-24
TuP-CH-15
ThP-CH-2
CH12-4
MoP-GR-31
GR16-6
ED4-1
ED5-2
MoP-ED-36
CH11-5
GR18-3
GR6-2
GR6-6
JT1-3
MoP-GR-21
MoP-GR-9
OD2-3
OD2-5
OD3-4
OD4-5
OD5-2
OD5-4
OD7-5
ThP-GR-31
ThP-OD-10
ThP-OD-20
ThP-OD-4
TuP-OD-18
CH16-4
GR6-2
GR6-6
MoP-GR-9
OD5-2
OD5-4
CH6-4

Iwinska, M.
GR12-3
Iwinska, M.
GR12-7
Iwinska, M.
GR7-1
Iwinska, M.
MoP-CH-18
Iwinska, M.
MoP-CH-19
Iwinska, M.
TuP-GR-44
Iwinska, M.
TuP-GR-8
Iza, M.
MoP-CH-20
Izumi, S.
TuP-CH-31
Izumi, T.
ThP-ED-31
Izumisawa, S.
GR12-5
Izumisawa, S.
GR1-3
Izumisawa, S.
TuP-GR-9― J ―J., R.
ThP-ED-LN3
Jachalke, S.
MoP-GR-33
Jäckel, H.
TuP-GR-LN3
Jacobs, G. A.
ED12-1
Jacobs, G. A.
ED4-5
Jacobs, G. A.
LN1-3
Jacopin, G.
CH10-2
Jacopin, G.
JT2-3
JACOPIN, G.
OD6-5
Jacopin, G.
ThP-GR-39
Jacopin, G.
ThP-OD-11
Jacques, V.
MoP-CH-LN3
Jadhav, S.
LN1-1
Jaeger, D.
TuP-GR-34
Jahn, U.
CH5-1
Jain, A.
ThP-ED-4
Jain, A.
TuP-ED-17
Jakiela, R.
CH16-5
Jakiela, R.
CH6-4
Jakiela, R.
GR3-3
Jakiela, R.
GR5-2
Jakiela, R.
GR5-6
Jakiela, R.
MoP-CH-18
Jakiela, R.
MoP-CH-19
Jakiela, R.
TuP-GR-8
Jaloustre, L.
ThP-GR-39
James, S.S. T. ThP-CH-LN1
Jamil, T.
GR7-3
Jamil, T.
GR8-5
Jang, S.
MoP-OD-24
Jang, T.
MoP-ED-24
Jang, Y.
TuP-ED-32
Janicki, Ł.
CH5-7
Janicki, Ł.
GR14-3Jannaud, A.
GR10-3Jannaud, A.
MoP-OD-14
Jansson, M. MoP-CH-LN2
Janzen, E.
MoP-CH-LN3
Janzen, M. B.
CH12-5
Jaroszynski, P.
CH16-5
Jaroszynski, P.
CH6-4
Jaroszynski, P.
GR3-3
Jaroszynski, P.
GR8-7
Jaroszynski, P. MoP-CH-18
Jaroszynski, P. MoP-CH-19
Jaroszynski, P. MoP-GR-36

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Jaroszynski, P. TuP-GR-44
Jaroszynski, P.
TuP-GR-8
Jelinek, R.
TuP-CH-25
Jena, D.
CH2-5
Jena, D.
CH8-6
Jena, D.
ED13-5Jena, D.
ED15-3Jena, D.
ED16-2
Jena, D.
LN1-1
Jena, D.
LN1-2
Jena, D.
LN1-5
Jena, D.
LN1-6
Jena, D.
OD11-3Jena, D.
PL-2
Jentsch, A. S.
GR11-2Jentsch, A. S.
TuP-GR-39
Jeon, H.
ThP-CH-13
Jeong, G.
MoP-GR-44
Jeong, G.
TuP-OD-3
Jeong, H.
MoP-GR-30
Jeong, H.
OD9-1
Jeong, J.
MoP-GR-45
Jeong, M.
MoP-ED-11
Jha, J.
ThP-ED-12
Ji, Y.
CH14-2Ji, Y.
ThP-ED-3
Ji, Y.
TuP-ED-10
Jia, H.
ThP-OD-15
Jia, M.
TuP-ED-2
Jiang, H.
CH15-1
Jiang, J.
TuP-ED-28
Jiang, K.
MoP-GR-1
Jiang, K.
MoP-OD-12
Jiang, Q.
CH7-3
Jiang, Q.
ED10-4
Jiang, Q.
ED12-5
Jiang, Q.
MoP-ED-18
Jiang, Q.
TuP-CH-8
Jiang, Q.
TuP-ED-38
Jiang, X.
ThP-ED-13
Jiang, Z.
OD10-5
Jiao, F.
MoP-OD-2
Jiao, Y.
TuP-CH-23
Jin, l. Y.
ED7-4
Jing, G.
ED10-4
Jo, I.
TuP-OD-3
Jo, M.
CH13-6
John, P.
LN2-7
John, P.
TuP-GR-LN4
Johnson, M.
MoP-GR-42
Johnson, W. C.
CH16-1
Jozwik, I.
ED4-2
Jozwik, P.
ThP-CH-15
Jridi, J.
MoP-GR-37
Ju, C.
TuP-GR-13
Ju, G.
ThP-CH-27
Ju, G.
ThP-GR-20
Juan, A.
OD3-3Juda, U.
GR15-4
Juillaguet, S.
ED16-5Juillaguet, S.
MoP-ED-20
Juillaguet, S.
TuP-CH-26
Julien, F.
JT2-3
Julien, H. F.
CH14-3Jun, S.
LN2-4
Jun, S.
MoP-CH-LN1
Jun, S. A.
ED10-2
Jung, H.
MoP-OD-6
Jung, H.
TuP-CH-17
Jung, J.
MoP-GR-46
Jung, J.
TuP-ED-32
Junichi, T.
MoP-GR-15
Juyal, A.
MoP-GR-25
Jyokawa, T.
OD3-1
― K ―
K, B.
MoP-CH-1
K, R.
CH7-5
Kabra, D.
MoP-OD-23
Kabukcuoglu, M. GR15-4
Kachi, T.
CH6-1
Kachi, T.
CH6-2
Kachi, T.
CH6-3
Kachi, T.
CH6-6
Kachi, T.
CH6-7
Kachi, T.
ED12-3
Kachi, T.
ED2-1
Kachi, T.
ED4-1
Kachi, T.
ED5-3
Kachi, T.
ED5-5
Kachi, T.
GR18-3
Kachi, T.
ThP-ED-20
Kachi, T.
TuP-ED-15
Kachi, T.
TuP-ED-22
Kachi, T.
TuP-OD-18
Kacperski, J.
GR10-2
Kacperski, J.
OD16-2
Kacperski, J.
OD8-5
Kadono, A.
TuP-OD-28
Kafar, A.
CH3-3
Kafar, A.
GR10-2
KAFAR, A.
OD12-4
Kafar, A.
OD16-2
Kafar, A.
OD8-5
Kafar, A.
TuP-CH-16
Kafar, A.
TuP-OD-22
Kagamitani, Y.
GR12-5
Kaganer, M. V.
CH5-1
Kai, N.
TuP-OD-20
Kai, T.
LN2-1
Kaito, S.
CH3-5
Kaleta, A.
ED16-3
Kaleta, A.
LN2-8
Kalisch, H.
ThP-ED-16
Kalisch, H.
ThP-ED-3
Kalisch, H.
TuP-ED-23
Kaltsounis, T.
GR17-4KALYAN, R.
ThP-ED-11
Kamada, K.
ThP-GR-43
Kamei, Y.
CH3-5
Kamikawa, T.
CH10-5
188

Kamikawa, T.
OD15-5
Kamimura, R.
OD6-4
Kaminska, A.
TuP-CH-21
Kamińska, E.
JT1-4
Kaminski, M.
ED4-2
Kaminski, M.
TuP-ED-11
Kaminski, M.
TuP-GR-41
Kamiński, M. MoP-ED-34
Kamiński, M.
ThP-ED-14
Kaminski, N.
ED5-6
Kaminski, P.
ThP-CH-32
Kamio, G.
MoP-CH-26
Kamiyama, M.
GR3-1
Kamiyama, S.
CH14-4
Kamiyama, S.
GR18-3Kamiyama, S.
GR6-2
Kamiyama, S.
GR6-6
Kamiyama, S.
JT1-3
Kamiyama, S. MoP-GR-21
Kamiyama, S.
MoP-GR-9
Kamiyama, S.
OD2-3
Kamiyama, S.
OD2-5
Kamiyama, S.
OD3-4
KAMIYAMA, S.
OD4-5
Kamiyama, S.
OD5-2
Kamiyama, S.
OD5-4
Kamiyama, S.
OD7-5
Kamiyama, S.
OD9-4
Kamiyama, S. ThP-GR-31
Kamiyama, S. ThP-OD-10
Kamiyama, S. ThP-OD-20
Kamiyama, S.
ThP-OD-4
Kamiyama, S. TuP-OD-18
Kamiyoshihara, C. OD10-7
Kamler, G.
ED2-2
Kanda, R.
OD11-4
Kanechika, M.
ED4-1
Kanechika, M.
ED5-5
Kanegae, K.
CH5-2
Kaneki, S.
CH2-3
Kaneki, S.
CH5-2
Kaneki, S.
GR1-1
Kaneki, S.
ThP-CH-4
Kaneko, R.
ED3-5
Kang, C.
TuP-GR-28
Kang, D.
TuP-ED-32
Kang, H.
ThP-ED-21
Kang, J.
MoP-GR-44
Kang, J.
TuP-GR-LN4
Kang, J.
TuP-OD-3
Kang, j. J.
TuP-GR-28
Kang, N.
ThP-ED-32
Kang, N.
ThP-ED-34
Kang, X.
JT1-2
Kang, X.
MoP-OD-2
Kang, X.
TuP-OD-16
Kangawa, Y.
ThP-GR-41
Kangawa, Y. ThP-GR-LN5
Kangawa, Y.
TuP-CH-29
Kangawa, Y.
TuP-GR-31

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Kangawa, Y.
TuP-OD-30
Kanitani, Y.
CH3-4
Kano, E.
CH6-2
Kano, E.
ED5-2
Kanta, S.
TuP-GR-30
Kanzaki, N.
OD2-4
Kao, Y.
MoP-GR-27
Kaplar, J. R.
ED4-5
Kaplar, J. R.
LN1-3
Kaplar, K. R.
GR17-3Kaplar, R.
ED4-3
Kappers, J. M.
CH16-3Kappers, J. M.
CH17-2Kappers, J. M.
CH4-6
Kappers, J. M. MoP-CH-14
Karakane, Y.
TuP-OD-10
Karmalkar, S.
TuP-ED-8
Karrakchou, S.
ED15-5
Kashima, Y.
OD1-2
Kashima, Y.
OD6-2
Kashima, Y.
OD6-4
Kasperovich, A.
ED10-2
Kataoka, K.
CH6-1
Kataoka, K.
CH6-2
Kataoka, K.
CH6-3
Kataoka, K.
CH6-7
Kataoka, K.
ED5-2
Kataoka, K.
OD13-1
Kataoka, K.
TuP-CH-10
Katayama, R.
CH13-1
Katayama, R.
GR17-2
Katayama, R.
GR4-2
Katayama, R.
GR5-5
Katayama, R.
OD16-3
Katayama, R.
OD16-4
Katayama, R.
OD16-5
KATO, Y.
OD4-5
Katsuumi, M. MoP-GR-40
Kauffmann, T. MoP-GR-25
Kaur, A.
MoP-OD-23
Kawaguchi, Y.
CH10-5
Kawaguchi, Y.
ThP-CH-2
Kawahara, M.
OD6-4
Kawaharamura, T. ED5-8-LN
Kawai, H.
MoP-CH-21
Kawaide, T.
ED6-2
Kawakami, T. MoP-GR-13
Kawakami, T.
MoP-GR-7
Kawakami, Y.
CH1-2
Kawakami, Y.
CH1-3
Kawakami, Y.
CH3-5
Kawakami, Y.
CH9-1
Kawakami, Y.
GR10-1
Kawakami, Y.
GR5-7
Kawakami, Y.
OD14-4
Kawakami, Y.
OD9-3
Kawakami, Y. ThP-GR-24
Kawakami, Y.
TuP-GR-23
Kawakami, Y.
TuP-GR-24
Kawamura, K.
ED10-3

Kawamura, T.
GR9-3
Kawamura, T.
JT3-2
Kawamura, T.
TuP-GR-6
Kawanowa, H. TuP-CH-15
Kawasaki, S.
ED9-6
Kawasaki, S.
ThP-ED-25
Kawasaki, S.
ThP-GR-14
Kawasaki, S.
TuP-GR-26
Kawasaki, T.
ThP-GR-4
Kawashima, H.
OD1-2
Kawazoe, Y.
CH1-5
Kawka, K.
ThP-GR-41
Kawka, K.
TuP-CH-LN1
Ke, W.
ThP-OD-7
Kearns, A. J.
OD3-3
Keller, S.
ED9-7-LN
Keller, S.
GR11-5
Keller, S.
OD4-6
Kempisty, P.
GR12-4
Kempisty, P.
GR8-7
Kempisty, P.
ThP-GR-41
Kempisty, P.
TuP-CH-11
Kempisty, P.
TuP-CH-LN1
Kempisty, P.
TuP-OD-30
Kernke, R.
CH8-3
Key, D.
CH4-3
Key, D.
CH5-3
Khachariya, D.
ED2-2
Khachariya, D.
ED7-5
Khachariya, D.
GR4-5
Khan, A.
ED10-6
Khan, A.
GR7-3
Khan, A.
GR8-5
Khan, A.
OD1-2
Khan, A.
TuP-OD-15
Khan, A. M.
CH13-6
Khan, A. M.
LN2-5
Khan, A. M.
TuP-OD-13
Khan, K.
ED13-2
Khan, M.
ED13-2
Khan, M.
GR4-3
Khan, M.
ThP-GR-LN2
Khandelwal, V. MoP-GR-3
Khandelwal, V.
TuP-ED-4
KHAW, L.
MoP-GR-24
Khot, C. A.
TuP-ED-14
Khoury, M.
ED12-2
Khoury, M.
GR7-5
Khüne, P.
GR8-2
Kienle, L.
GR13-5
Kienle, L.
GR13-6
Kihira, S.
GR9-3
Kikuchi, .
CH15-2
Kikuchi, A.
OD7-2
Kikuchi, A.
ThP-CH-2
Kikuchi, Y.
OD3-1
Kikuta, D.
ED4-1
Kikuta, D.
ED5-2
Kim, B.
LN2-4
Kim, B.
LN2-4
189

Kim, B.
Kim, B.
Kim, B.
Kim, C.
Kim, D.
Kim, D.
Kim, D.
Kim, D.
Kim, E.
Kim, E.
Kim, G.
Kim, G.
Kim, H.
Kim, H.
Kim, H.
Kim, H.
Kim, H.
Kim, H.
Kim, H.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, J.
Kim, K. J.
Kim, M.
Kim, M.
Kim, M.
Kim, M.
Kim, M.
Kim, M.
Kim, N.
Kim, N.
Kim, S.
Kim, S.
Kim, T.
Kim, T.
Kim, T.
Kim, Y.
Kim, Y.
kimoto, T.
Kimoto, T.
Kimoto, T.
Kimura, K.
Kimura, R.
Kimura, S.
Kimura, S.
Kimura, S.
Kimura, T.
Kimura, T.
Kimura, T.

MoP-CH-LN1
TuP-GR-27
TuP-GR-LN2
ThP-ED-21
ED12-6
MoP-ED-11
ThP-CH-13
TuP-ED-14
OD11-3
TuP-GR-13
ThP-ED-32
ThP-ED-34
ED12-6
MoP-ED-24
MoP-ED-29
ThP-ED-29
ThP-ED-32
ThP-ED-34
TuP-ED-32
ED10-2
MoP-ED-24
MoP-ED-25
MoP-GR-30
MoP-GR-30
MoP-GR-44
OD10-1
ThP-ED-26
ThP-ED-32
ThP-ED-34
ThP-GR-12
TuP-GR-LN2
TuP-OD-2
TuP-OD-3
OD10-1
MoP-ED-24
MoP-ED-29
MoP-GR-45
MoP-GR-46
MoP-OD-24
TuP-OD-7
ED15-1
TuP-ED-26
MoP-GR-30
ThP-ED-21
MoP-ED-24
TuP-ED-14
TuP-OD-7
MoP-OD-24
OD10-1
CH17-6
TuP-ED-5
TuP-GR-25
GR16-4
CH15-2
CH11-5
CH14-4
CH5-6
CH5-2
GR1-1
GR15-3

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Kimura, T.
TuP-GR-1
King, C.
ED11-1
Kioupakis, E.
CH1-1
Kioupakis, E.
OD4-1
Kioupakis, E. ThP-GR-LN1
Kirby, S.
GR15-6
Kirby, S.
TuP-CH-24
Kireeva, E. A.
CH5-1
Kirihara, T.
OD6-2
KIRILENKO, P.
OD4-3
Kirilenko, P.
OD8-1
Kirste, L.
ED13-1
Kirste, L.
GR12-3
Kirste, L.
GR12-7
Kirste, L.
GR13-3
Kirste, L.
GR15-4
Kirste, L.
MoP-ED-26
Kirste, L.
ThP-CH-14
Kirste, L.
ThP-CH-16
Kirste, L.
ThP-GR-10
Kirste, L.
ThP-GR-8
Kirste, L.
TuP-CH-5
Kirste, R.
ED2-2
Kirste, R.
ED7-5
Kirste, R.
GR3-1
Kirste, R.
GR4-5
Kirste, R.
GR6-7
Kishino, K.
CH13-3
Kishino, K.
ThP-CH-2
Kishino, K.
ThP-GR-32
Kishino, K.
ThP-OD-12
Kishishita, T.
ThP-ED-25
Kitade, T.
OD8-3
Kitagawa, K.
ED2-1
Kitagawa, K.
TuP-ED-22
Kitde, T.
OD11-4
Kiyohara, K.
ED14-3
Kiyoi, A.
ED1-5
Kladko, V.
ThP-GR-27
Klar, J. P.
ED16-1
Klar, J. P.
GR11-2
Klar, J. P.
ThP-CH-26
Klar, J. P.
TuP-GR-39
Klein, B.
ED12-4
Klement, P.
ED16-1
Klump, A.
GR15-4
Klump, A.
ThP-GR-LN3
Knauer, A.
GR6-1
Kneissl, M.
GR6-1
Kneissl, M.
MoP-CH-5
Kneissl, M.
OD13-4Kneissl, M.
OD1-5
Kneissl, M.
OD5-3
Kneissl, M.
OD5-5Kneissl, M.
OD5-6
Kneissl, M.
OD6-1
Kneissl, M.
ThP-CH-5
Kneissl, M.
TuP-CH-22
Kneissl, M.
TuP-OD-25
Knight, S.
ThP-CH-24

Knight, S.
ThP-CH-25
Ko, M.
ThP-OD-LN1
Ko, M.
ThP-OD-LN2
Kobayashi, A.
CH2-3
Kobayashi, A.
GR13-2
Kobayashi, A.
GR8-6
Kobayashi, A.
GR9-3
Kobayashi, A.
GR9-4
Kobayashi, A.
JT3-2
Kobayashi, A. ThP-ED-35
Kobayashi, H.
GR9-7
Kobayashi, H.
OD1-1
Kobayashi, H.
OD11-4
Kobayashi, H.
OD8-3
Kobayashi, I.
GR11-4
Kobayashi, K.
CH6-2
Kobayashi, K.
OD3-4
Kobayashi, M.
GR15-3
Kobayashi, M.
GR9-3
Kobayashi, M.
TuP-GR-1
Kobayashi, N.
OD3-1
Kobayashi, R.
CH14-4
Kobayashi, S.
GR6-6
Kobayashi, T.
OD15-5
Kobayashi, T.
TuP-ED-19
Kobayashi, T.
TuP-ED-20
Kobayashi, Y.
GR16-4Kochetkov, F.
JT2-3
Koda, R.
OD3-1
Koga, M.
OD9-4
Kohlstedt, H.
GR13-5
Kohlstedt, H.
GR13-6
Kohlstedt, R.
ThP-OD-17
Kohn, E.
ED2-2
Kohn, E.
ED7-5
Koide, Y.
MoP-GR-2
Kojima, C.
CH15-6
Kojima, K.
CH10-5
Kojima, K.
CH1-2
Kojima, K.
CH9-4
Kojima, K.
GR4-1
Kojima, K.
LN2-6
Kojima, K.
MoP-CH-17
Kojima, K.
OD9-3
Kojima, K.
ThP-CH-4
Kojima, T.
MoP-OD-18
Kojima, T.
MoP-OD-LN2
Kojima, T.
TuP-ED-25
Kokubo, M.
OD6-4
Kolbe, T.
GR6-1
Kolbe, T.
OD6-3
Kölle, S.
OD5-3
Koller, C.
CH7-4
Kometani, Y.
ED6-2
Kominami, H. MoP-GR-29
Komoda, A.
CH10-5
Komoda, A.
OD15-5
Konczewicz, L.
ED16-5
Konczewicz, L. MoP-ED-20
Konczewicz, L. ThP-CH-32
190

Konczewicz, L. TuP-CH-26
Konczewicz, L. TuP-GR-8
Kondo, R.
GR6-2
Kondo, R.
GR6-6
Kondo, R.
MoP-GR-9
Kondo, R.
OD5-4
Kondo, T.
ED14-7
Kondo, T.
ED5-3
Kondo, T.
ED5-4
Kondo, T.
ThP-CH-22
Kong, Z.
ThP-ED-18
Konno, T.
CH5-2
Konno, T.
GR1-1
Konno, T.
MoP-GR-41
Konno, T.
ThP-CH-4
Koo, M.
TuP-GR-13
Koprucki, T.
CH11-3
Korbutowicz, R.
CH5-7
Koronski, K.
TuP-CH-21
Koseki, S.
OD1-2
Koseki, S.
OD6-4
Koseki, S.
ThP-GR-15
Kosiel, K.
ED4-2
Koslow, I.
OD4-4
Kouno, T.
ThP-CH-2
Kouno, T.
TuP-CH-4
Kowaki, T.
CH17-6
Kowaki, T.
GR17-5
Kowaki, T.
TuP-ED-5
Kowaki, T.
TuP-GR-25
Kowalski, G. MoP-GR-31
Kozaka, T.
GR9-1
Kozaka, T.
GR9-4
Kozlowski, R. ThP-CH-32
Krause, S.
LN1-4
Kremer, M.
MoP-CH-30
Kret, S.
ED16-3Kret, S.
LN2-8
Krischok, S.
MoP-CH-28
Krishnamoorthy, S. ED3-1
Krishnan, A.
GR18-2
Krishnan, A.
GR7-6
Krizhanovskii, N. D.
CH13-5
Kroker, S.
MoP-CH-13
Kruegener, J.
TuP-ED-37
Krügener, J.
GR4-6
Krukowski, S. TuP-OD-30
Kruszka, R.
ThP-ED-14
Krysko, M.
GR11-3
Krysko, M.
ThP-CH-18
Kryvyi, S.
ThP-GR-27
Kuball, M.
ED10-1
Kubo, H.
TuP-GR-LN1
Kubo, K.
ThP-CH-23
Kubo, T.
ED9-3
Kubo, Y.
ThP-GR-28
Kubo, Y.
TuP-GR-37
Kubota, E.
ED3-4
Kubota, K.
JT1-3

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Kubota, K.
OD7-5
Kubota, K.
ThP-GR-31
Kubota, K.
ThP-OD-10
Kubota, K.
ThP-OD-20
Kučera, M.
ED16-3
Kucharski, R.
CH5-5
Kucharski, R.
GR12-2
Kucharski, R.
GR12-3
Kucharski, R.
GR12-4
Kucharski, R.
GR12-7
Kucharski, R.
GR7-1
Kucharski, R.
ThP-CH-32
Kuchuk, A.
ThP-GR-27
Kuchuk, V. A. MoP-CH-15
Kudo, R.
ThP-ED-25
Kudo, R.
ThP-GR-16
Kudo, Y.
CH3-4
Kudrawiec, R.
CH5-7
Kudrawiec, R.
GR14-3
Kudrawiec, R. MoP-CH-11
Kudrawiec, R. TuP-CH-11
Kudrawiec, R. TuP-OD-26
Kuhne, P.
ThP-CH-24
Kühne, P.
GR7-4
Kühne, P.
GR8-4
Kuhnen, R.
MoP-CH-28
KULKARNI, A. M.
MoP-OD-8
Kulkarni, A. M. ThP-GR-35
Kumabe, T.
ED1-3
Kumabe, T.
ED9-6
Kumabe, T.
ThP-GR-14
Kumagai, N.
GR6-3
Kumagai, N.
TuP-GR-20
Kumagai, Y.
GR18-4
Kumagai, Y.
LN2-1
Kumakura, K.
CH11-4
Kumakura, K.
CH14-6
Kumakura, K.
ED13-6
Kumakura, K.
GR16-4
Kumakura, K.
GR5-3
Kumakura, K. MoP-GR-28
Kumar, A.
ED12-2
Kumar, M.
ED15-5
Kumar, M.
ThP-GR-2
KUMAR, M.
TuP-ED-4
Kumar, M.
TuP-ED-LN2
Kumar, P.
GR16-5
Kumarasamy, M. R.
ThP-ED-11
kun, T. L.
TuP-CH-30
Kunti, A.
ThP-CH-35
Kunzmann, J. D. ThP-OD-17
Kuo, H.
OD11-1
Kuo, S.
OD11-2Kuo, Y.
OD11-2
Kurabe, U.
OD7-2
Kurai, S.
CH13-6
Kurai, S.
CH17-6
Kurai, S.
CH9-3

Kurai, S.
GR17-5
Kurai, S.
MoP-CH-8
Kurai, S.
TuP-CH-3
Kurai, S.
TuP-ED-5
Kurai, S.
TuP-GR-15
Kurai, S.
TuP-GR-25
Kuraoka, Y.
ED11-5
Kuraoka, Y.
MoP-GR-21
Kuraoka, Y.
ThP-OD-20
Kurimoto, K.
GR12-5
Kuroda, Y.
ThP-GR-28
Kurokawa, Y.
TuP-ED-29
Kurosawa, S.
ThP-GR-43
Kurowska, B. MoP-GR-31
Kurth, G.
ThP-CH-11
Kuruoglu, C.
TuP-GR-43
Kusaba, A.
ThP-GR-41
Kusaba, A.
TuP-GR-31
Kusanagi, S.
CH3-4
Kusch, G.
CH10-3
Kusch, G.
CH4-6
Kusch, G.
MoP-CH-5
Kushimoto, M. MoP-GR-8
Kushimoto, M. MoP-OD-28
Kushimoto, M.
OD13-1
Kushimoto, M.
OD13-2
Kushimoto, M.
OD5-1
Kushimoto, M. ThP-OD-24
Kushvaha, S. S. ThP-GR-2
Kutty , M. N.
TuP-OD-1
Kuyob, B. N.
ThP-ED-11
Kuze, N.
GR15-3Kuze, N.
OD1-1
Kuze, N.
TuP-GR-1
Kuzmík, J.
ED16-3
Kuzmík, J.
TuP-GR-45
Kuzuhara, M.
TuP-ED-16
Kwak, C.
MoP-ED-25
Kwak, H.
MoP-GR-30
Kwak, H.
ThP-ED-32
Kwak, H.
ThP-ED-34
Kwak, J.
MoP-ED-24
Kwak, J.
TuP-OD-7
Kyong Cho, H.
OD6-1
― L ―
Labau, S.
ThP-CH-10
Labchir, N.
ThP-CH-10
Lacam, C.
GR10-4
Lachowski, A. TuP-GR-18
Lafossas, M.
GR17-4
Lafossas, M.
OD15-4
Lafossas, M.
TuP-GR-22
Lafosse, X.
ThP-GR-40
Laha, A.
JT3-3
Laha, A.
MoP-CH-35
Laha, A.
MoP-OD-21
Laha, A.
MoP-OD-23
Laha, A.
ThP-CH-9
Laha, A.
ThP-ED-4
Laha, A.
ThP-GR-25
191

Laha, A.
ThP-OD-14
Laha, A.
ThP-OD-5
Laha, A.
TuP-ED-17
Laha, A.
TuP-ED-37
Laha, A.
TuP-GR-35
Lähnemann, J.
CH5-1
Lähnemann, J.
GR14-2
Lähnemann, J. MoP-CH-3
Lähnemann, J. TuP-GR-LN4
Lai, K.
MoP-GR-27
Lai, Y.
OD11-2Lal, A.
LN1-1
Landskron, K.
GR16-3Lang, J.
MoP-OD-10
Lang, J.
TuP-OD-16
Langer, R.
CH7-7
Langer, R.
GR11-1
Largeau, L.
ThP-GR-40
Lassiaz, T.
OD7-3
Lau, K.
CH14-5Laurence, A. T.
CH4-3
Le Maitre, P.
JT1-1
Le Maitre, P.
OD15-2Le Maitre, P.
OD15-4
Le, Q.
TuP-OD-2
Le, S.
TuP-OD-LN1
Le, V.
MoP-OD-7
Leach, J.
LN2-2
Lee, C.
GR4-3
Lee, C.
ThP-GR-LN2
Lee, D.
OD14-1
Lee, E. K.
ED13-3
Lee, E. K.
ED9-4
Lee, G.
ThP-ED-21
Lee, H.
MoP-ED-24
Lee, H.
OD1-3
Lee, H.
ThP-ED-LN2
Lee, H.
TuP-OD-7
Lee, J.
MoP-GR-45
Lee, J.
MoP-GR-46
Lee, J.
OD10-1
Lee, J.
TuP-ED-32
Lee, J.
TuP-GR-13
LEE, K.
MoP-GR-24
LEE, K.
MoP-GR-24
Lee, K.
ThP-OD-LN1
Lee, K.
ThP-OD-LN2
Lee, L.
MoP-ED-31
Lee, L. M.
TuP-OD-LN2
Lee, M.
MoP-ED-11
Lee, M.
MoP-GR-27
Lee, M.
ThP-ED-2
Lee, S.
CH2-1
Lee, S.
ED13-7
Lee, S.
GR13-4
Lee, S.
GR18-2
Lee, S.
GR7-6
Lee, S.
MoP-ED-25
Lee, S.
ThP-OD-LN1
Lee, S.
ThP-OD-LN2

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Lee, S.
TuP-GR-27
Lee, T.
OD1-1
Lee, T.
OD11-1
Lee, Y.
OD11-2
Lee, Z.
ThP-ED-2
Lefebvre1, P.
TuP-CH-34
Lei, D.
GR15-7
Lei, M.
MoP-OD-LN1
Lei, M.
OD3-5
Lei, M.
ThP-GR-5
Lei, M.
ThP-OD-18
Lemme, C. M.
ThP-ED-3
Leone, S.
GR13-3
Leone, S.
MoP-ED-33
Leone, S.
ThP-CH-16
Leone, S.
ThP-GR-10
Lesnik, A.
GR15-5
Lesnik, A.
ThP-CH-11
Leszczynski, M.
GR5-2
Leszczynski, M.
GR5-6
Leszczynski, M. ThP-CH-15
Leszczynski, M. ThP-CH-18
Leszczynski, M. TuP-GR-18
Letts, E.
CH4-3
Letts, E.
CH5-3
Leung, K.
ThP-ED-11
Levy, F.
OD15-4
Ley, R.
ED12-2
Li, A.
MoP-ED-3
Li, B.
MoP-ED-18
Li, C.
ThP-ED-13
Li, D.
GR15-7
Li, D.
MoP-GR-1
Li, D.
MoP-OD-11
Li, D.
MoP-OD-12
Li, D.
OD12-2
Li, F.
MoP-ED-28
Li, F.
ThP-CH-30
Li, F.
ThP-OD-16
Li, G.
TuP-ED-28
Li, H.
ED13-3
Li, H.
ED9-4
Li, H.
MoP-GR-11
Li, H.
MoP-GR-LN3
Li, J.
CH17-5
Li, J.
GR4-7
Li, j.
GR6-5
Li, J.
JT2-5
Li, J.
MoP-ED-13
Li, j.
MoP-GR-18
Li, J.
MoP-OD-13
Li, J.
ThP-OD-19
Li, J.
ThP-OD-6
Li, J.
ThP-OD-9
Li, J.
TuP-GR-4
Li, J.
TuP-OD-11
Li, J.
TuP-OD-17
Li, K.
ThP-OD-26
Li, K.
ThP-OD-27
Li, K.
ThP-OD-28

Li, K.
Li, K.
Li, M.
Li, M.
Li, M.
Li, M.
Li, P.
Li, p.
LI, P.
Li, Q.
Li, Q.
Li, Q.
Li, S.
Li, S.
Li, S.
LI, S.
Li, S.
Li, S.
Li, S.
Li, S.
Li, S.
Li, S.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, X.
Li, Y.
Li, Y.
Li, Y.
Li, Y.
Li, Y.
Li, Y. h.
Li, Z.
Li, Z.
Li, Z.
Li, Z. F.
Li, Z. X.
Liang, J.
Liang, L.
Liang, N.
Liang, W.
Liang, W.
Liang, X.
liang, y.
Liang, Y.
Liang, Y.
Liao, C.
Liao, C.
Liao, E. M.
192

ThP-OD-29
ThP-OD-30
MoP-ED-22
MoP-GR-35
ThP-GR-11
ThP-GR-9
ED12-5
GR10-5
OD4-6
MoP-ED-4
MoP-GR-16
MoP-GR-22
ED11-3
ED3-7
GR8-3
MoP-GR-6
MoP-OD-LN1
OD3-5
ThP-GR-5
ThP-OD-18
TuP-ED-9
TuP-OD-14
ED15-5
MoP-ED-13
MoP-GR-3
MoP-OD-25
OD12-2
OD4-1
OD8-2
ThP-CH-30
ThP-ED-28
ThP-ED-9
TuP-ED-21
TuP-ED-33
TuP-ED-4
TuP-ED-LN1
TuP-ED-LN2
MoP-GR-14
MoP-OD-2
OD15-1
TuP-ED-9
TuP-GR-11
ED1-4
OD11-2
ThP-GR-23
ThP-OD-19
OD12-2
GR2-1
ED10-3
GR14-4
ED8-4
MoP-OD-2
OD2-1
GR8-3
MoP-ED-17
MoP-OD-26
ThP-ED-18
MoP-GR-3
TuP-ED-27
CH5-3

Liao, E. M.
CH5-5
Liao, H.
CH4-7
Liao, H.
ED16-4
Liao, Y.
MoP-OD-11
Lider, V.
GR11-2
Lider, V.
TuP-GR-39
Ligor, O.
MoP-GR-26
Lim, N.
OD14-2
Lim, S.
MoP-GR-44
Lim, S.
TuP-OD-3
Lim, W.
TuP-OD-3
Lin, C.
OD11-1
Lin, C.
OD15-1
Lin, D.
TuP-CH-27
lin, F. S.
TuP-CH-30
Lin, H.
ED9-4
Lin, H.
ThP-GR-11
Lin, H.
ThP-GR-9
Lin, R.
OD11-5
Lin, S.
TuP-ED-27
Lin, T.
OD15-1
Lin, T.
TuP-OD-19
Lin, Y.
GR14-4
Lin, Y.
OD11-2
Lind, E.
ED7-3
Lind, E.
GR8-4
Lindsay, R. L.
CH15-1
Ling, M.
ThP-ED-19
Lingaparthi, R.
CH7-5
Liou, P.
GR14-4
Litschgi, S.
OD15-2
Littmann, M.
GR11-2
Littmann, M.
TuP-GR-7
Litwin-Staszewska, E.
GR5-6
Liu, B.
GR8-3
Liu, B.
MoP-GR-10
Liu, b.
MoP-OD-4
Liu, B.
TuP-OD-9
Liu, C.
TuP-ED-10
Liu, C.
TuP-ED-12
Liu, C.
TuP-OD-14
Liu, D.
MoP-GR-22
Liu, F.
GR2-1
Liu, F.
MoP-GR-17
Liu, F.
OD2-1
Liu, f.
ThP-ED-24
Liu, H.
GR14-4Liu, H.
OD11-2
Liu, H. K.
GR2-1
Liu, I.
OD14-5
Liu, J.
MoP-ED-4
Liu, J.
MoP-GR-14
Liu, J.
MoP-GR-16
LIU, J.
OD10-6
Liu, J.
OD3-2
Liu, J.
ThP-CH-30
Liu, J.
ThP-OD-16
Liu, J.
TuP-GR-32
Liu, K.
MoP-ED-3

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Liu, L.
Liu, M.
Liu, N.
Liu, N.
Liu, N.
Liu, P.
Liu, P.
Liu, P. J.
Liu, q. C.
Liu, R.
liu, s.
liu, s.
Liu, S.
Liu, S.
Liu, S.
Liu, T.
Liu, W.
Liu, W.
Liu, W.
Liu, X.
Liu, X.
Liu, X.
Liu, X.
Liu, X.
Liu, X.
Liu, X.
Liu, X.
Liu, X.
Liu, X.
Liu, X.
Liu, X.
Liu, Y.
Liu, Y.
Liu, Y.
Liu, Y.
Liu, Y.
Liu, Y.
Liu, Y.
Liu, Y.
Liu, Y.
Liu, Y.
Liu, Y.
Liu, Y.
Liu, Z.
Liu, Z.
Liu, Z.
Liu, z.
Liu, Z.
Liu, Z.
liu, z.
liu, z.
Liu, Z.
Liu, Z.
Liu, Z.
Liu, Z.
Liu, Z.
Liu, Z.
Liu, Z.
Liu, Z.
Liu, Z.

ED5-8-LN
TuP-OD-14
MoP-GR-35
MoP-OD-1
TuP-OD-17
ThP-GR-11
ThP-GR-9
OD12-2
TuP-ED-7
CH4-4
MoP-ED-2
MoP-ED-9
ThP-ED-10
ThP-ED-33
ThP-ED-8
TuP-ED-LN2
MoP-ED-17
ThP-ED-18
ThP-ED-19
CH7-3
ED10-4
ED12-5
MoP-ED-18
MoP-OD-16
ThP-GR-6
TuP-CH-8
TuP-ED-10
TuP-ED-28
TuP-ED-38
TuP-ED-LN3
TuP-ED-LN4
CH14-2
MoP-ED-15
MoP-OD-25
OD10-4OD15-1
ThP-CH-3
ThP-ED-22
ThP-GR-LN1
TuP-CH-18
TuP-CH-9
TuP-ED-1
TuP-ED-6
CH16-2
ED8-3
ED9-4
GR6-5
JT2-5
MoP-ED-13
MoP-GR-18
MoP-GR-18
MoP-OD-16
OD8-2
ThP-ED-9
ThP-ED-LN1
ThP-GR-1
ThP-GR-7
TuP-CH-9
TuP-ED-LN2
TuP-ED-LN3

Liu, Z.
TuP-GR-4
Liu, Z.
TuP-OD-11
Liubchenko, O. ThP-GR-27
Lo, H.
MoP-ED-14
Lobo-Ploch, N.
OD6-1
Loesing, A.
OD10-7
Loesing, A.
OD11-4
Loesing, A.
OD15-3
Loesing, A.
OD8-3
Loesing, A.
TuP-OD-20
Logotheti, A.
GR8-4
Loiseau, A.
MoP-GR-25
Long, H.
CH1-4
Long, H.
JT2-1
Long, H.
ThP-OD-8
Lopes, J. J.
CH12-5
Lottigier, P.
CH10-2
Loveday, M.
MoP-ED-31
Loveless, J.
GR3-1
Loveless, J.
GR4-5
Loveless, J.
GR6-7
Low, H.
ThP-OD-1
Lu , T.
MoP-CH-7
LU, B.
MoP-CH-2
Lu, B.
MoP-OD-3
Lu, G.
ThP-OD-26
Lu, G.
ThP-OD-27
Lu, G.
ThP-OD-28
Lu, H.
ED1-4
Lu, H.
ED14-2
Lu, H.
ED14-4Lu, H.
ED7-4
Lu, H.
JT3-4
Lu, H.
MoP-ED-1
Lu, H.
MoP-GR-10
Lu, H.
MoP-OD-16
Lu, H.
MoP-OD-20
Lu, H.
MoP-OD-22
Lu, H.
ThP-ED-1
Lu, Q.
ThP-OD-6
Lu, S.
ED1-3
Lu, T.
CH11-2
Lu, W.
JT1-3
Lu, W.
OD7-5
Lu, W.
TuP-ED-9
Lu, Y.
MoP-ED-16
Lu, Y.
MoP-GR-27
Lu, Y.
OD8-2
Lu, Z.
ED9-4
Lucznik, B.
GR12-4
Lucznik, B.
GR8-7
Lucznik, B.
MoP-GR-36
Ludwiczak, K.
CH12-4
Ludwiczak, K. MoP-ED-32
Ludwiczak, K. MoP-GR-31
Lukin, G.
GR15-5
Lukin, G.
ThP-CH-11
Luna, E.
MoP-GR-26
Lundh, J.
ED4-5
Lundh, S. J.
LN1-3
193

Luo, W.
ThP-ED-13
Luo, Y.
CH6-5
Luo, Y.
MoP-GR-LN3
Luo, Y.
ThP-OD-26
Luo, Y.
ThP-OD-27
Luo, Y.
ThP-OD-28
Luo, Z.
TuP-CH-18
Luo, Z.
TuP-CH-9
Luo, Z.
TuP-ED-1
Luo, Z.
TuP-ED-6
Lüßmann, F.
JT3-5
Lüßmann, F.
MoP-CH-13
Lüttich, C.
CH2-2
Lv, S.
MoP-OD-12
Lv, Z.
MoP-OD-25
Lv, Z.
TuP-ED-30
Lynsky, C.
MoP-CH-20
Lynsky, C.
OD14-6
Lyu, Q.
CH14-5
Lyu, X.
OD10-5
Lyu, Z.
ThP-CH-19― M ―Ma, H.
ThP-ED-33
Ma, K.
MoP-ED-15
Ma, K.
ThP-ED-22
Ma, L.
JT1-5
Ma, L.
JT2-1
Ma, L.
OD3-6
Ma, X.
CH4-5
Ma, X.
ED11-3
Ma, X.
ED3-6
Ma, X.
ED8-4
Ma, X.
MoP-ED-1
ma, x.
MoP-ED-2
Ma, X.
MoP-ED-22
Ma, X.
MoP-ED-3
Ma, X.
MoP-ED-6
Ma, X.
OD13-5
Ma, X.
ThP-ED-10
Ma, X.
ThP-ED-30
Ma, X.
ThP-ED-33
Ma, X.
ThP-ED-8
Ma, X.
TuP-CH-27
Ma, X.
TuP-ED-2
Ma, X.
TuP-ED-31
Ma, Y.
TuP-ED-12
Maeda, N.
CH13-6Maeda, N.
JT2-2
Maeda, N.
MoP-CH-26
Maeda, N.
OD1-2
Maeda, N.
TuP-OD-15
Maeda, R.
GR9-1
Maeda, R.
GR9-4
Maeda, S.
TuP-ED-16
Maeda, T.
CH2-3
Maeda, T.
GR13-2Maeda, T.
GR9-3
Maeda, T.
LN1-1
Maeda, T.
ThP-ED-35
Maeda, T.
TuP-GR-20

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Mahadik, A. N.
CH5-3
Mahadik, A. N.
CH5-5
Mahadik, A. N.
ED4-5
Mahadik, A. N. TuP-CH-7
Mahapatra, S.
JT3-3
Mahapatra, S. MoP-OD-23
Mahapatra, S.
TuP-GR-35
Maillard, F.
ThP-GR-40
Mainali, G.
TuP-ED-21
Mainali, G.
TuP-ED-4
Majchrzak, D.
GR14-3Majchrzak, D. MoP-CH-11
Majchrzak, D. TuP-CH-11
Majchrzak, D. TuP-CH-14
Majumder, A.
JT3-3
Makhonin, M. M. CH13-5
Makimoto, T. MoP-CH-22
Makino, T.
MoP-GR-12
Makino, T.
OD3-1
Makino, T.
ThP-ED-25
Makisako, R.
ED9-1
Makkonen, I.
TuP-CH-22
Malakoutian, M.
ED10-2
Malhotra, Y.
OD7-4
Malier, Y.
OD7-3
Malindretos, J. TuP-GR-LN3
Malinverni, M.
OD12-3
Malpuech, G.
OD16-1
Mamun, A.
ED10-6
Mamun, A.
GR7-3
Mamun, A.
GR8-5
Manglano Clavero, I.
MoP-CH-16
Manglano Clavero, I.
MoP-GR-23
Mano, T.
MoP-GR-2
Mansor, M.
MoP-GR-20
Marcuzzi, A.
CH4-1
Margenfeld, C.
GR4-6
Margenfeld, C. MoP-CH-13
Margenfeld, C. MoP-CH-16
Margenfeld, C. MoP-GR-23
Margenfeld, C. TuP-ED-13
Marie, X.
TuP-CH-34
Mariolle, D.
GR17-4
Mark, J.
GR15-3
Marona, L.
GR10-2
Marona, L.
OD16-2
Marona, L.
ThP-OD-25
MARONA, Ł.
OD12-4
Marona, Ł.
OD8-5
Marona, Ł.
TuP-OD-22
Marshall, E.
ED13-7
Marshall, N. E.
CH2-1
Marshall, N. E.
GR13-4
Marshall, N. E.
GR18-2Marshall, N. E.
GR7-6
Martin, B.
MoP-OD-7
Martin, D.
OD12-3
Martin, W. R. MoP-CH-16

Martin, W. R.
MoP-CH-5
Martinovic, I. TuP-OD-LN1
Maruyama, M.
GR12-6Maruyama, M. TuP-GR-12
Maruyama, M. TuP-GR-LN1
Marx, M.
ThP-CH-11
Marx, M.
ThP-GR-18
Masaki, K.
OD15-5Masanari, I.
MoP-GR-12
Mase, A.
MoP-OD-18
Mase, A.
TuP-ED-25
Mastro, M.
GR5-4
Mastro, M.
MoP-GR-42
Mastro, M.
ThP-CH-29
Mat Hussin, M. MoP-GR-20
Matei, C.
MoP-OD-7
Matias, V.
GR14-5
Matioli, E.
ED10-5
Matioli, E.
ED2-3
Matioli, E.
ED9-5
Matioli, E.
PL-3
Matsubara, E.
GR6-2
Matsubara, E.
GR6-6
Matsubara, Y. MoP-GR-LN1
Matsuda, Y.
CH1-2
Matsuda, Y.
GR10-1
Matsuda, Y.
OD14-4
Matsuda, Y.
OD9-3
Matsuda, Y.
TuP-GR-23
Matsuda, Y.
TuP-GR-24
Matsuno, S.
TuP-OD-10
Matsuoka, T.
CH1-5
Matsuura, E.
OD1-2
Matsuura, E.
OD6-4
Matthews, C.
ED13-7
Matthews, M. C.
CH2-1
Matthews, M. C.
GR13-4
Matthews, M. C.
GR18-2Matthews, M. C.
GR7-6
Matys, M.
ED2-1
Matys, M.
TuP-ED-22
Mauder, C.
ThP-ED-3
Mauder, C.
ThP-GR-18
Mauduit, C.
ThP-CH-19
Mauraya, K. A. ThP-GR-2
Mazen, F.
ThP-GR-LN4
Mazumder, A.
ED10-6
Mazumder, A.
GR7-3
Mazumder, A.
GR8-5
Mballo, A.
ED15-5Mballo, A.
MoP-GR-25
McCrone, M. T.
CH2-1
Mecouch, W.
ED2-2
Medjahed, I.
MoP-OD-7
Medjdoub, F.
ED11-2
Medjdoub, F.
ED16-5
Medjdoub, F.
ED6-4
MEDJDOUB, F.
ED7-2
Medjdoub, F. MoP-ED-20
Medjdoub, F. MoP-GR-43
194

Medjdoub, F.
TuP-CH-26
Medjdoub, F.
TuP-GR-43
Mehnke, F.
TuP-CH-22
Mehta, J.
ED16-5
Mehta, J.
MoP-ED-20
Mehta, J.
TuP-CH-26
Mei, Y.
CH1-4
Mei, Y.
JT1-5
Mei, Y.
JT2-1
Mei, Y.
MoP-OD-17
Mei, Y.
OD3-2
Mei, Y.
OD3-6
Mei, Y.
ThP-OD-8
Mei, Y.
TuP-CH-1
Meier, F.
GR11-2Meierhofer, F.
JT3-5
Meierhofer, F. MoP-CH-13
Meierhofer, F. MoP-OD-27
Meierhofer, F.
TuP-OD-5
Meissner, E.
CH8-5
Meissner, E.
ED7-1
Meissner, E.
GR15-5Meissner, E.
MoP-GR-43
Meissner, E.
ThP-CH-11
Meißner, E.
TuP-GR-43
Mellor, J. C.
ThP-CH-LN1
Mendizabal, L.
GR17-4
Meneghesso, G.
CH4-1
Meneghesso, G.
ED14-5
Meneghesso, G.
ED14-6
Meneghesso, G.
ED3-3
Meneghesso, G.
OD13-4
Meneghini, M.
CH4-1
Meneghini, M.
ED14-5
Meneghini, M.
ED14-6
Meneghini, M.
ED3-3
Meneghini, M.
OD13-4Meng, Y.
TuP-GR-16
Menhke, F.
OD9-1
Merkle, A.
GR15-2Merot, J.
MoP-GR-25
Meunier, M.
OD10-2Meyer, D.
ThP-ED-3
Mi, M.
ED8-4
Mi, M.
MoP-ED-6
Mi, Z.
GR13-1
Mi, Z.
OD7-4
Miao, W.
OD11-1
Miao, Y.
OD10-5
Micale, K. G.
ED6-3
Micale, K. G.
ED6-5
Micale, K. G. MoP-ED-35
Michalowski, P.
GR5-2Michalowski, P. P.
TuP-GR-18
Michałowski, P. P.
CH5-7
Michel, N.
LN2-8
Micheletto, R.
ThP-CH-6
Michler, S.
ED7-1
MICHLER, S.
ED7-2

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Michler, S.
MoP-GR-43
Michon, A.
GR10-3Miersch, C.
TuP-CH-5
Mieszczynski, C. ThP-CH-15
Mihalache, I. MoP-GR-26
Mikawa, Y.
GR12-5
Mikolajick, T. MoP-GR-33
Mikulla, M.
LN1-4
Mikulla, M.
MoP-ED-26
Miller, N.
ED11-1
Miller-Murthy, S.
LN1-5
Milner, P.
MoP-OD-15
Milner, P.
OD13-6
Min, B.
TuP-ED-32
Min, S.
ThP-OD-2
Minagawa, H.
GR3-2
Minehisa, K.
TuP-GR-40
Minj, A.
GR11-1
Minoura, Y.
ED6-1
Miralles, B.
OD15-2
Miranti-Augustin, R.
TuP-ED-13
Mishima, K.
OD15-5
Mishima, T.
MoP-ED-23
Mishima, T.
ThP-CH-21
Mishra, K. U.
ED1-1
Mishra, K. U.
ED9-7-LN
Mishra, U.
GR11-5
Mishra, U.
OD4-6
Mita, S.
ED2-2
Mita, S.
ED7-5
Mita, S.
GR3-1
Mita, S.
GR4-5
Mita, S.
GR6-7
Mitoda, K.
CH3-5
Miyagawa, C.
ThP-GR-4
Miyahara, H.
OD3-1
Miyajima, T.
CH14-4
Miyajima, T.
TuP-CH-2
Miyake, H.
CH11-5
Miyake, H.
CH17-1
Miyake, H.
CH9-2
Miyake, H.
CH9-3
Miyake, H.
CH9-4
Miyake, H.
ED3-4
Miyake, H.
ED5-8-LN
Miyake, H.
GR3-2
Miyake, H.
GR4-1
Miyake, H.
GR4-2
Miyake, H.
GR4-4
Miyake, H.
GR5-7
Miyake, H.
GR6-2
Miyake, H.
GR6-6
Miyake, H.
GR9-5
Miyake, H.
MoP-CH-8
Miyake, H.
MoP-GR-9
Miyake, H.
OD16-4
Miyake, H.
OD5-2
Miyake, H.
OD5-4
Miyake, H.
TuP-CH-3

Miyamoto, M.
CH17-6
Miyamoto, M.
GR17-5
Miyamoto, M.
TuP-ED-5
Miyamoto, M. TuP-GR-25
Miyanaga, K.
OD2-4
Miyazaki, A. MoP-OD-28
Miyazaki, A.
OD13-1
Miyoshi, M.
ED6-2
Miyoshi, M.
MoP-OD-18
Miyoshi, M. MoP-OD-LN2
Miyoshi, M.
OD9-4
Miyoshi, M.
TuP-CH-2
Miyoshi, M.
TuP-ED-25
Mizobata, H.
TuP-ED-20
Mizuno, T.
ThP-OD-4
Moatti, J.
CH11-3
Mochizuki, T.
GR12-5
Mochizuki, T.
GR1-3
Mochizuki, T.
TuP-GR-9
Modolo, N.
ED3-3
Mohammadian Rasnani, Z.
TuP-OD-LN1
Mollah, S.
GR7-3
Molnard, R.
GR7-5
Momiyama, T.
GR16-4
Momosaki, R.
OD16-3
Momosaki, R.
OD16-4
Mondal, A.
ThP-OD-5
Mondal, S.
GR13-1
Moneta, J.
CH8-3
Moneta, J.
ThP-CH-12
Moneta, J.
ThP-CH-18
Monroy, E.
CH17-5
Monroy, E.
GR17-6
Monroy, E.
MoP-OD-14
Monroy, E.
OD9-2
Montag, V.
OD6-1
Moon, J.
ED13-4
Moon, J.
LN2-4
Moon, S.
MoP-GR-30
Moon, S.
OD10-1
Moon, Y.
MoP-GR-44
Morales, M.
LN2-8
Morassi, M. MoP-CH-LN1
Morassi, M.
ThP-CH-35
Morassi, M.
ThP-GR-40
Morata, S.
TuP-CH-6
Mori, H.
MoP-GR-41
Mori, Y.
GR12-1Mori, Y.
GR12-6Mori, Y.
GR2-3
Mori, Y.
MoP-GR-15
Mori, Y.
TuP-GR-12
Mori, Y.
TuP-GR-LN1
Morimoto, Y.
CH3-4
Mori-Tamamura, K. CH3-4
Moriyama, C.
ED10-3
Motoki, K.
CH2-1
Motoki, K.
ED13-7
Motoki, K.
GR13-4
195

Motoki, K.
GR18-2
Motoki, K.
GR7-6
Moudakir , T.
GR16-7
Moulin, C.
ThP-GR-LN4
Mouri, K.
OD1-2
Mouri, S.
ThP-GR-28
Mu, Z.
OD10-5
Muhin, A.
GR6-1
Muhin, A.
OD13-4
Muhin, A.
OD6-1
Mukai, T.
PL-4
Mukaiyama, Y. TuP-GR-42
Mukhin , I.
JT2-3
Mullani, B. N. TuP-ED-14
Muller, A. D.
CH2-5
Müller, J.
MoP-CH-28
Müller, J. M.
GR11-2
Müller, J. M.
TuP-GR-39
Müller, S.
LN1-4
Müller, S.
MoP-ED-26
Murakami, H.
GR11-4
Murakami, H.
GR1-5
Murakami, H.
GR2-4
Murakami, K.
GR12-6
Murakami, K.
TuP-GR-12
Murakami, K. TuP-GR-LN1
Murakami, R. ThP-GR-43
Murakami, Y.
TuP-CH-2
Murakawa, K.
CH10-5
Muralidharan, R. MoP-ED-8
Murata, T.
GR5-5
Murata, Y.
LN2-6
Murayama, A. ThP-CH-34
Murotani, H.
CH13-6
Murotani, H.
CH9-3
Musengezi, A. T.
OD6-3
Muziol, G.
GR11-3
Muziol, G.
GR5-2
Muziol, G.
OD12-5
Muziol, G.
OD12-6
Muziol, G.
TuP-OD-26
Muzioł, G.
CH3-3
Muzioł, G.
TuP-OD-22― N ―N. Alshareef, . TuP-ED-LN1
Nag, D.
JT3-3
Nagai, Y.
ED10-3
Nagamatsu, K.
GR1-5
Nagamatsu, K.
GR2-4
Nagamatsu, K. MoP-GR-13
Nagamatsu, K. MoP-GR-7
Nagamatsu, K. MoP-GR-LN1
Nagane, S.
OD3-1
Nagano, T.
OD6-4
Nagao, M.
CH6-2
Nagasato, Y.
ED5-8-LN
Nagasawa, T.
OD3-4
Nagase, I.
TuP-ED-16
Nagashima, T.
GR18-4
Nagashima, Y. TuP-GR-31

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Nagata, K.
MoP-OD-28
Nagata, K.
OD13-1
Nagata, K.
OD13-3
Nagata, K.
TuP-CH-10
Nagata, T.
MoP-CH-32
Nagata, Y.
TuP-OD-15
Nago, H.
ED14-3Nair, A.
CH2-4
Nair, A.
ED13-1
Nair, A.
ThP-CH-14
Nair, A.
ThP-GR-8
Naito, A.
ThP-GR-22
Najmi, A. M.
CH15-2
Nakagawa, K.
ThP-GR-4
Nakahara, K.
TuP-GR-26
Nakajima, F.
ThP-ED-15
Nakajima, Y.
MoP-GR-47
Nakama, K.
TuP-GR-40
Nakamura, D.
GR2-2
Nakamura, D. ThP-GR-16
Nakamura, J.
TuP-CH-29
Nakamura, N.
ED6-1
Nakamura, R.
TuP-GR-38
Nakamura, S.
GR3-5
Nakamura, S. MoP-CH-20
Nakamura, S.
OD14-2
Nakamura, S.
OD14-5
Nakamura, S.
OD14-6
Nakamura, S.
OD3-3
Nakamura, S.
OD4-2
Nakamura, S.
OD4-6
Nakamura, S.
TuP-OD-4
Nakamura, T.
CH9-4
Nakamura, T.
ED3-4
Nakamura, T.
GR4-1
Nakamura, Y.
OD1-4
Nakamura, Y.
OD3-1
Nakamura, Y.
TuP-ED-18
Nakano, M.
MoP-GR-21
Nakano, T.
ThP-ED-25
Nakano, T.
ThP-GR-16
Nakano, T.
TuP-GR-26
Nakano, Y.
ThP-ED-35
Nakao, T.
CH14-4
Nakaoka, I.
ED3-4
Nakata, A.
TuP-GR-15
Nakata, K.
PL-7
Nakayama, E.
OD3-1
Nakazawa, H.
GR16-4
Nam, O.
ED8-2
Nam, O.
MoP-GR-45
Nam, O.
MoP-GR-46
Nam, O.
ThP-ED-32
Nanishi, Y.
TuP-GR-14
Naniwae, K.
OD9-4
Nanjo, T.
ED1-5
Naoi, Y.
MoP-GR-13
Naoi, Y.
MoP-GR-7
Naoi, Y.
MoP-GR-LN1
Napierala, J.
TuP-GR-33

Naranjo, B. F. MoP-OD-19
Narayanan, S. E.
MoP-CH-21
Narita, T.
CH6-1
Narita, T.
CH6-2
Narita, T.
CH6-3
Narita, T.
CH6-7
Narita, T.
ED2-1
Narita, T.
ED4-1
Narita, T.
ED5-2
Narita, T.
OD13-1
Narita, T.
TuP-CH-10
Narita, Y.
MoP-ED-23
Narita, Y.
ThP-CH-21
Narui, H.
MoP-CH-21
Nath, D.
MoP-ED-8
Nath, N. D.
TuP-GR-30
Nawaz, M.
MoP-CH-29
Ndiaye, S.
MoP-OD-14
Negra, R.
ThP-ED-3
Neimontas, K. MoP-CH-23
Nela, L.
ED10-5
Nemoto, K.
GR1-5
Nemoto, K.
GR2-4
Nemoz, M.
ED16-5
Nemoz, M.
GR14-1
Nemoz, M.
MoP-ED-12
Nemoz, M.
MoP-ED-20
Nemoz, M.
MoP-GR-12
Nemoz, M.
TuP-CH-26
Nepal, N.
TuP-CH-7
Neplokh , V.
JT2-3
Nethaji, D.
CH7-5
Newton, A.
MoP-ED-31
Nezu, T.
TuP-ED-16
Ng, G.
ED13-3
Ng, G.
ED9-4
NG, K.
MoP-GR-24
Ng, Y.
CH4-4
Ng, Y.
ED11-4
Ng, Y.
ThP-ED-5
Nguyen, T.
CH2-5
Nguyen, T.
LN1-1
Nguyen, T.
ThP-GR-40
Nguyen, T. T.
ED13-5
Ni, X.
ThP-GR-30
Ni, X.
TuP-OD-8
Nie, J.
JT1-2
Nie, J.
MoP-OD-2
Nies, C.
CH12-2
Nikitskii, N.
LN2-5
Nikitskiy, N.
GR14-1
Nikolenko, A.
GR16-2
Nilsen, A. T.
TuP-GR-11
Ninoki, R.
CH17-6
Ninoki, R.
TuP-ED-5
Ninoki, R.
TuP-GR-25
Nippert, F.
CH12-5
Nippert, F.
ThP-CH-5
Niroula, J.
ED10-7
196

Niroula, J.
ED12-4
Niroula, J.
ED6-3
Niroula, J.
MoP-ED-35
Nishibayashi, T.
GR6-2
Nishibayashi, T.
GR6-6
Nishida, T.
LN2-1
Nishikawa, A.
OD10-7
Nishikawa, A.
OD11-4
Nishikawa, A.
OD15-3
Nishikawa, A.
OD8-3
Nishikawa, A. TuP-OD-20
Nishikawa, K.
ED1-5
Nishikawa, S.
TuP-GR-26
Nishikawa, T.
OD3-4
Nishikawa, Y.
GR8-6
Nishimura, K. MoP-GR-47
Nishio, G.
ThP-ED-31
Nishizawa, S.
GR2-2
Nishizawa, S.
ThP-ED-27
Nitta, S.
ED1-3
Nitta, S.
GR1-4
Nitta, S.
GR2-2
Nitta, S.
GR5-1
Nitta, S.
MoP-GR-34
Nitta, S.
ThP-GR-14
Nitta, S.
TuP-GR-29
Nitta, S.
TuP-GR-31
Nitta, S.
TuP-GR-42
Niu, X.
ED3-6
Niwa, T.
CH3-5
Niwa, T.
ThP-ED-31
Noculak, A.
ThP-ED-3
Noda, K.
TuP-CH-2
Noda, S.
OD7-1
Noguchi, T.
OD9-4
Noh, K.
MoP-GR-30
Nomeika, K.
CH10-4
Nomeika, K.
MoP-CH-23
Nomoto, K.
CH2-5
Nomoto, K.
ED13-5
Nomoto, K.
LN1-1
Nomura, I.
ThP-OD-12
Nomura, K.
MoP-ED-21
Nonaka, K.
ED11-5
Nonaka, K.
MoP-GR-21
Nonaka, K.
ThP-OD-20
Nong, M.
MoP-GR-3
Nong, M.
TuP-ED-21
Nong, M.
TuP-ED-LN2
Norbury, Q. G.
GR15-3
Nordomi, R.
ThP-ED-20
Novikov, V. S. ThP-CH-LN1
Nozaki, M.
TuP-ED-19
Nozaki, M.
TuP-ED-20
Nozu, k.
MoP-GR-21
Nukaga, T.
LN2-1
Nukariya, T.
TuP-CH-23
Nunn, G.
MoP-GR-25
Nunoue, S.
ED14-3
Nunoue, S.
ED3-5

The 14th International Conference on Nitride Semiconductors (ICNS-14)― O ―O'Connor, T.
GR16-5O'Connor, T.
OD13-6
Oda, M.
TuP-CH-29
Oda, M.
TuP-OD-28
Odabasi, o.
ED13-2
Odani, T.
GR1-3
Odani, T.
TuP-GR-9
Odnoblyudov, V.
CH7-7
O'Donovan, M.
CH11-3
Ogawa, Y.
GR4-4
Ogura, H.
CH10-5
Ogura, H.
OD15-5
Oh, D.
MoP-ED-29
Oh, H.
ThP-ED-26
Oh, J.
MoP-ED-24
Oh, J.
TuP-OD-7
Oh, M.
ED12-2
Ohara, M.
OD3-1
Ohashi, Y.
ThP-GR-43
Ohkawa, K.
CH1-3
Ohkawa, K.
CH1-4
Ohkawa, K.
CH15-2
Ohkawa, K.
OD2-3
OHKAWA, K.
OD4-3
Ohkawa, K.
OD8-1
Ohkawa, K.
TuP-OD-1
Ohkawa, N.
OD10-7
Ohkawa, N.
OD11-4
Ohkawara, H.
CH13-6
Ohki, T.
ED6-1
Ohnishi, K.
ED1-3
Ohnishi, K.
GR1-4
Ohnishi, K.
MoP-GR-34
Ohnishi, K.
ThP-GR-14
Ohno, Y.
ED10-3
Ohori, D.
OD14-3
Ohshima, T.
ThP-ED-25
Ohta, H.
MoP-ED-23
Ohta, H.
ThP-CH-21
Ohtsuka, M.
MoP-GR-6
Ohuchi, T.
GR12-5
Ohuchi, Y.
TuP-CH-31
Ohwaka, N.
TuP-OD-20
Ohya, M.
OD2-2
Oishi, K.
ED9-1
Oishi, T.
MoP-GR-29
Oka, R.
GR18-3Oka, R.
TuP-OD-18
Oka, T.
ThP-ED-31
Okada, E.
ED11-2
Okada, E.
ED6-4
Okada, H.
TuP-ED-LN5
Okada, N.
CH13-6
Okada, N.
CH17-3
Okada, N.
CH17-6
Okada, N.
CH9-3
Okada, N.
GR17-5
Okada, N.
MoP-CH-8
Okada, N.
TuP-CH-3

Okada, N.
TuP-ED-5
Okada, N.
TuP-GR-15
Okada, N.
TuP-GR-25
Okada, S.
TuP-OD-20
Okamoto, K.
CH13-3
Okamoto, K.
CH3-5
Okayama, Y.
GR2-3
Okayama, Y.
MoP-GR-15
Okayama, Y.
OD16-3
Okuaki, Y.
OD1-1
Okuma, G.
TuP-GR-14
Okumura, H.
CH7-6
Okuno, K.
GR18-3
Okuno, K.
MoP-OD-28
Okuno, K.
OD13-1
Okuno, K.
OD13-3
Okuno, K.
OD2-2
Okuno, K.
TuP-OD-18
Olea, J.
MoP-OD-19
Oliva, M.
TuP-GR-LN4
Oliver, A. R.
CH10-3
Oliver, A. R.
CH14-2
Oliver, A. R.
CH16-3
Oliver, A. R.
CH17-2
Oliver, A. R.
CH4-6
Oliver, A. R.
MoP-CH-14
Oliver, A. R.
MoP-CH-5
Oliver, R.
CH14-1Olszewski, K. ThP-GR-26
Olszewski, W. MoP-CH-11
Olszewski, W. MoP-GR-39
Olszewski, W. TuP-CH-11
Olszewski, W. TuP-CH-14
Omiya, N.
ThP-CH-17
Onishi, Y.
MoP-CH-8
Onishi, Y.
TuP-CH-3
Onuma, T.
ThP-OD-12
Onuma, T.
TuP-GR-14
Onuma, T.
TuP-GR-38
Onuma, Y.
ThP-CH-31
Oogami, H.
OD1-2
Oogami, H.
OD6-4
Ooi, C.
ThP-OD-1
Opołczynska, K.MoP-CH-11
Opołczynska, K. TuP-CH-14
Ortiga-Fibla, J.
CH8-5
Ortiga-Fibla, J. TuP-CH-12
Osada, Y.
OD6-4
Osaki, K.
ED11-5
Oshima, Y.
CH2-2
Oshima, Y.
GR1-3
Oshima, Y.
TuP-GR-9
Oshimura, R.
MoP-CH-8
Oshimura, R.
TuP-CH-3
Oshiyama, A.
CH15-4
Oshiyama, A. ThP-GR-LN5
Oshiyama, A.
TuP-ED-24
Osten, H.
TuP-ED-37
Ostermaier, C.
CH7-4
Osvald, J.
TuP-CH-20
197

Ota, S.
CH14-4
Ota, S.
MoP-GR-29
Ota, Y.
MoP-CH-34
Oto, T.
CH13-3
Otsuki, R.
CH6-2
Ottapilakkal, O. V.
MoP-GR-25
Ottapilakkal, V.
ED15-5
Ottapilakkal, V.
GR14-1
Ottapilakkal, V.
GR16-7Otte, N.
OD9-1Ou, H.
ThP-OD-4
Ou, W.
OD3-2
Ou, W.
ThP-OD-8
Ou, Y.
ThP-OD-4
Ouchi, S.
ED10-3
Ougazzaden, A.
ED15-5
Ougazzaden, A.
GR14-1Ougazzaden, A.
GR16-7
Ougazzaden, A. MoP-GR-25
Oya, K.
TuP-OD-20
Oya, M.
OD13-1
Oya, M.
OD13-3
Ozaki, S.
ED6-1
Ozeki, R.
ThP-GR-16
― P ―
P, A.
MoP-CH-1
Pacuski, W.
MoP-GR-31
Pai, Y.
OD11-1
Paillet, C.
GR10-3
Pal, H.
ED12-4
Pal, H.
ED6-3
Pal, H.
MoP-ED-35
PAL, P.
MoP-OD-23
Palacios, T.
ED10-7
Palacios, T.
ED12-2
Palacios, T.
ED12-4
Palacios, T.
ED2-5
Palacios, T.
ED6-3
Palacios, T.
ED6-5
Palacios, T.
MoP-ED-35
Palacios, T.
TuP-ED-36
Palmquist, C. N.
OD3-3
Palmquist, N.
TuP-OD-4
Pampili, P.
GR1-2
Pampili, P.
ThP-GR-17
Pan, L.
ThP-OD-27
Pan, X.
GR1-5
Pan, X.
GR2-4
Pan, Z.
JT1-2
Pan, Z.
MoP-OD-2
Panda, P.
ThP-ED-4
Pandey, A.
OD7-4
Pant, N.
CH1-1
Pant, N.
OD4-1
Papamichail, A.
GR7-4
Papamichail, A.
GR8-2
Papamichail, A. MoP-CH-29
Papamichail, A. ThP-CH-24
Paradisanos, I. TuP-CH-34

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Paranjpe, A.
TuP-GR-27
Parbrook , J. P. MoP-OD-15
Parbrook, J. P.
GR1-2
Parbrook, J. P.
GR16-5
Parbrook, J. P.
GR6-4
Parbrook, J. P.
OD13-6
Pargon, E.
ThP-GR-39
Parillaud, O.
GR10-4Park , J.
LN2-3
Park, C.
ThP-ED-21
Park, C.
ThP-OD-2
Park, J.
GR7-5
Park, J.
MoP-GR-44
Park, J.
MoP-GR-45
Park, J.
MoP-GR-46
Park, J.
OD14-1
Park, J.
ThP-CH-13
Park, J.
TuP-ED-14
Park, J.
TuP-OD-3
Park, Y.
OD10-1
Parkinson, P.
CH16-3
Parvais, B.
GR11-1
Parvez, B.
ThP-ED-12
Parvez, B.
ThP-ED-LN3
Parvez, B.
TuP-ED-35
Paskov, P.
GR8-2
Paskov, P.
MoP-CH-29
Paskov, P.
ThP-CH-24
Paskov, P. P.
GR7-4
Paskova, T.
MoP-CH-29
Patel, J.
TuP-CH-13
Patil, M.
MoP-ED-19
Patil, M.
ThP-ED-12
Patil, M.
ThP-ED-LN3
Patil, M.
TuP-ED-35
PATOUILLARD, J.
TuP-GR-2
Patwal, S.
CH7-5
Paul, J.
ThP-ED-12
Paul, J.
ThP-ED-LN3
Pavan, P.
CH4-1
Pavelescu, M. E.
MoP-GR-26
Pavlidis, S.
ED2-2
Pavlidis, S.
ED7-5
Pawłowski, J.
GR16-6
Pedeches, A.
GR9-6
Pedeches, A.
LN2-8
Pei, Y.
ThP-GR-30
Peng, L. H.
GR2-1
Peng, W.
OD10-4Pennachio, D. MoP-GR-42
Peralagu, U.
GR11-1
Perepeliuc, A.
GR16-7
Perera, N.
ED10-5Peretti, J.
CH10-1
Peretti, J.
CH16-1
Peretti, J.
GR17-1
Perlin, P.
GR10-2
Perlin, P.
JT1-4

PERLIN, P.
OD12-4
Perlin, P.
OD16-2
Perlin, P.
OD8-5
Perlin, P.
ThP-OD-25
Perlin, P.
TuP-CH-16
Perlin, P.
TuP-OD-22
PERNEL, C.
MoP-OD-7
Pernot, J.
ED16-5
Pernot, J.
MoP-ED-12
Pernot, J.
MoP-ED-20
PERNOT, J.
OD6-5
Pernot, J.
TuP-CH-26
Perozek, A. J. MoP-ED-35
Perozek, J.
ED2-5
Persson, I.
GR8-2
Persson, O. Å. P. ThP-GR-37
Persson, O. P.
GR7-4
Persson, O.Å. P.
GR8-2
Persson, R. A.
GR7-4
Persson, R. A. ThP-GR-37
Peters, L.
GR4-6
Petit-Étienne, C. ThP-GR-39
Petraru, A.
GR13-5
Petraru, A.
GR13-6
Petrich, R.
MoP-CH-28
Pfüller, C.
CH5-1
Piechota, J.
TuP-OD-30
Pieczulewski, A. N. CH2-5
Piejko, A.
MoP-CH-11
Piejko, A.
MoP-GR-39
Pieniak, K.
CH3-3
Pilati, M.
OD13-4
Pillet, J.
OD15-4
Pimputkar, S.
GR16-3
Pimputkar, S.
ThP-GR-13
Pimputkar, S.
ThP-GR-21
Pingen, K.
ThP-GR-29
Pingen, K.
TuP-GR-36
Pino Munoz, D. ThP-CH-10
Piotrowska-Wolińska, K.
OD8-5
Piotrzkowski, R. ThP-CH-32
Piva, F.
OD13-4
Plo, J.
MoP-CH-LN3
Plo, J.
ThP-CH-LN1
Po, W.
ThP-OD-7
Pobegen, G.
CH7-4
Podlipskas, Z.
CH10-4
Pogany, D.
CH7-4
Polojärvi, V.
ThP-CH-34
Poncet, S.
OD15-2
Pongrácz, J.
CH14-2
Pookpanratana, S.
ThP-CH-29
Posthuma, N.
ED1-2
Posthuma, N.
ED3-3
Posthuma, N.
ThP-GR-18
Pozina, G.
MoP-GR-32
Pradhan, K. B.
ThP-GR-2
Prakash, J.
ED6-5
198

Pramanik, T.
MoP-CH-31
Prasai, D.
OD6-3
Prasannanjaneyulu, B.
TuP-ED-8
Prescher, M.
GR13-3Prescher, M.
ThP-CH-16
Prescher, M.
ThP-GR-10
Prescher, M.
ThP-GR-8
Pristovsek, M.
GR1-2
Pristovsek, M.
LN2-3
Pristovsek, M.
OD14-1
Pristovsek, M. ThP-GR-17
Pristovsek, M. ThP-GR-19
Protasenko, V.
ED15-3Prozheev, I.
CH16-5Prozheev, I.
TuP-CH-22
Prystawko, P.
ED4-2
Prystawko, P. MoP-ED-34
Prystawko, P.
ThP-ED-14
Prystawko, P.
TuP-GR-41
Pu, Y.
MoP-OD-26
Pucicki, D.
MoP-GR-39
Pucicki, D.
TuP-CH-11
Pudelski, M.
GR14-2
Pudi, S.
TuP-ED-17― Q ―Qie, H.
MoP-ED-4
Qie, H.
MoP-GR-16
Qie, H.
TuP-GR-32
Qin, l.
MoP-ED-2
Qin, l.
MoP-ED-9
Qin, L.
ThP-ED-10
Qin, L.
ThP-ED-8
Qin, Z.
TuP-OD-16
Qiu, J.
OD2-1
Qu, H.
CH4-2
QUACH, M. A. TuP-GR-33
Quay, R.
LN1-4
Quek, J. Z.
ThP-GR-9
Quek, Z.
ThP-GR-11
Quevedo, A.
GR3-5
Quiñones, E. C.
ED7-5
Quinones-Garcia, C. GR4-5
Qwah, K.
ED2-4
Qwah, K.
OD14-5
Qwah, K.
TuP-OD-29
Qwah, S. K.
CH10-1― R ―Rabarot, M.
ThP-GR-LN4
Radu, I.
ThP-GR-LN4
Raff, .
TuP-OD-13
Raghavan, S.
MoP-ED-8
Raghavan, S.
TuP-GR-30
Raghuwanshi, M.
ThP-CH-14
Raghuwanshi, M. ThP-GR-8
Rahman, I. S.
OD4-1
Rahman, M.
GR8-5
Rai, S.
GR7-5
Rai, S.
ThP-OD-14

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Rajan, S.
OD4-1
Rajbhar, K. M.
TuP-ED-4
Ramos, F.
TuP-GR-27
Rampazzo, F.
ED14-5
Rampazzo, F.
ED14-6
Ramsteiner, M.
CH2-2Rana, S. K.
ThP-OD-13
Rana, S. K.
TuP-OD-27
Ranjan, K.
ED13-3
Ranjan, K.
ED9-4
Ranjan, K.
ThP-ED-11
Rass, J.
GR6-1
Rass, J.
OD1-5
Rass, J.
OD6-1
Rass, J.
OD6-3
Rather, A. M. MoP-GR-27
Rathkanthiwar, S.
GR3-1
Rathkanthiwar, S.
GR4-5
Rathkanthiwar, S.
GR6-7
Rathknathiwar, S.
ED2-2
RAYNAUD, C. TuP-GR-2
Rebelo, N.
OD5-6
Rechsteiner, M. TuP-GR-34
Reddeppa, M.
OD7-4
Reddy, P.
ED2-2
Reddy, P.
ED7-5
Reddy, P.
GR3-1
Reddy, P.
GR4-5
Redeckas, K. MoP-CH-23
Regan, D.
ED11-1
Regan, E.
ED11-1
Reilly, K.
ED4-3
Ren, D.
TuP-GR-11
Ren, F.
JT3-4
Ren, F.
MoP-OD-16
Ren, f. f.
ED1-4
Ren, F. F.
ED14-2
Ren, F. F.
ED14-4Ren, f. F.
ED3-2Ren, f. F.
ED7-4
Ren, Z.
OD4-1
Ren, Z.
OD7-3
Rengarajan, M. TuP-GR-30
Rennesson, S.
ED11-2Rennesson, S.
ED16-5Rennesson, S. MoP-ED-20
Rennesson, S.
TuP-CH-26
Reserbat-Plantey, A.
GR14-1
Reshchikov, A. M.
MoP-CH-18
Reszka, A.
ThP-GR-27
Reuter, D.
TuP-GR-7
Rezaei, M.
ED9-5
Richard, O.
CH7-7Richter, C.
CH8-3
Richter, C.
GR15-4Richter, S.
GR7-4
Richter, S.
GR8-4
Richter, S.
ThP-CH-24

Richter, S.
ThP-CH-25
Richter, S.
TuP-CH-6
Rienzi, V.
OD4-6
Rigutti, L.
MoP-OD-14
Rindert, V.
GR8-4
Rindert, V.
ThP-CH-25
Rizuan, N.
MoP-GR-20
Rizzi, A.
TuP-GR-LN3
Robert, C.
TuP-CH-34
Roccato, N.
OD13-4
Rochat, N.
GR10-3
Rochat, N.
MoP-OD-14
Rochat, N.
MoP-OD-7
Rochat, N.
TuP-GR-33
Röder, C.
GR13-3Röder, C.
TuP-CH-5
Rodriguez-Alvarez, H.
ED5-6Rogoża, J. J.
MoP-ED-32
Rol, F.
JT1-1
ROL, F.
OD15-2
Rol, F.
OD15-4
Rol, F.
ThP-CH-1
Romanitan, C. MoP-CH-15
Romanitan, C. MoP-GR-26
Römer, F.
OD5-3
Römer, F.
TuP-ED-13
Rong, X.
OD2-1
Rong, Y.
ED14-4
Ronning, C.
GR4-6
Ronning, C.
MoP-CH-13
Roopa, R.
ThP-GR-2
Roqan , S. I.
MoP-CH-7
Roqan, S. I.
ThP-CH-7
Roqan, S. I.
ThP-GR-33
Roqan, S. I.
TuP-OD-1
Roqan, S. I.
TuP-OD-23
Rorsman, N.
CH7-2
Rorsman, N.
GR7-4
Rorsman, N.
ThP-CH-20
Roshko, A.
ThP-GR-36
Rosová, A.
ED16-3
Rossetti, M.
OD12-3
Rossow, U.
GR3-4
Rossow, U.
MoP-CH-6
Rotella, H.
GR9-6
Rotella, H.
LN2-8
Rousseau, A. MoP-CH-LN3
Rousseau, A.
OD10-1
Rousseau, A. ThP-CH-LN1
Rouvière, J.
TuP-GR-33
Rouvre, G.
ThP-CH-19
Rowell, P.
ED11-1
Ru, S.
OD10-5
Ruder, A.
ThP-CH-25
Rudinsky, M.
ThP-GR-44
Rudziński, M.
CH5-7
Rummel, B.
ED4-3
Ruschel, J.
GR6-1
Ruschel, J.
OD1-5
199

Ruschel, J.
OD6-1
Ruschel, J.
OD6-3
Ruterana, P.
ED16-3
Ruterana, P.
LN2-8
Ryou, J.
ED15-1
Ryou, J.
TuP-ED-26
RYU, S.
MoP-OD-8
Ryu, S.
ThP-GR-35― S ―Saba, K.
OD16-2
Sabelfeld, K. K.
CH5-1
Sadovyi, B.
GR16-2
Sadovyi, P.
GR16-2
Sadowski, A. O. MoP-ED-34
Sadowski, O.
ED4-2
Saeki, H.
TuP-CH-31
Sáenz de Santa María
Modroño, P.
CH10-2
Safriuk-Romanenko, N.
ThP-GR-27
Saghi, Z.
MoP-OD-14
Saha, D.
MoP-ED-19
Saha, D.
ThP-ED-12
Saha, D.
ThP-ED-LN3
Saha, D.
ThP-OD-13
Saha, D.
TuP-ED-35
Saha, D.
TuP-OD-27
Saha, K.
JT3-3
Sahu, A.
MoP-ED-19
Sahu, A.
ThP-ED-12
Sahu, A.
ThP-ED-LN3
Sahu, A.
TuP-ED-35
Sahu, J.
MoP-ED-19
Sahu, J.
ThP-ED-12
Sahu, J.
ThP-ED-LN3
Sahu, J.
TuP-ED-35
Sahu, S. S.
ThP-OD-14
Sahu, S. S.
TuP-GR-35
Saini, K. A.
ThP-ED-LN4
Saito, K.
CH9-4
Saito, T.
OD2-3
Saito, T.
OD2-5
Saito, T.
ThP-CH-31
Saito, T.
ThP-OD-9
Saito, W.
ThP-ED-27
Saito, Y.
GR18-3
Saito, Y.
MoP-OD-28
Saito, Y.
OD13-1
Saito, Y.
OD13-3
Saito, Y.
TuP-CH-10
Saito, Y.
TuP-OD-18
Sakaguchi, I.
ThP-CH-31
Sakai, A.
CH11-5
Sakai, A.
CH17-1
Sakai, A.
CH5-6
Sakai, M.
ThP-CH-2
Sakai, M.
TuP-CH-4
Sakakima, H.
TuP-CH-31
Sakano, H.
LN2-1

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Sakowski, K.
TuP-OD-30
Sakowski, S.
GR8-7
Sakurai, H.
ED14-3
Sakurai, T.
ThP-ED-25
Sakurai, Y.
ThP-ED-25
Salmon, M.
TuP-CH-24
Salvestrini, J.
GR16-7
Salvestrini, J. MoP-GR-25
Salvestrini, P. J.
ED15-5Samizadeh Nikoo, M.
ED9-5
Sampson, W.
ThP-ED-7
Sampson, W.
TuP-CH-13
Samuelson, L. ThP-GR-37
Samukawa, S.
OD14-3
Sandström, P.
TuP-GR-36
Sang, Y.
MoP-OD-4
Sang, Y.
TuP-OD-9
Sannicolo, T.
OD7-3
Sano, K.
ThP-CH-4
Sarkar, B.
ED4-4
Sarkar, B.
MoP-CH-31
Sarkar, B.
MoP-ED-5
Sarkar, B.
TuP-ED-LN2
Sarkar, M.
MoP-CH-14
Sarkar, R.
JT3-3
Sarkar, R.
MoP-CH-35
Sarkar, R.
ThP-CH-9
Sarkar, R.
TuP-ED-17
Sarkar, R.
TuP-ED-37
Sasaki, A.
TuP-GR-15
Sasaki, H.
MoP-CH-22
Sasaki, S.
CH14-6
Sasaki, T.
TuP-GR-14
Sasakura, K.
LN2-1
Sasaoka, C.
MoP-GR-8
Sasaoka, C.
OD5-1
Sasaoka, C.
ThP-OD-24
Sato, E.
GR4-2
Sato, E.
OD16-4
Sato, H.
ThP-GR-43
Sato, K.
CH17-3Sato, K.
CH8-4
Sato, K.
MoP-GR-47
Sato, K.
OD1-1
Sato, K.
OD3-1
Sato, M.
ED6-1
Sato, S.
GR3-2
Sato, S.
ThP-CH-34
Sato, T.
ThP-CH-23
Sato, T.
TuP-CH-23
Sato, Y.
ThP-OD-9
Sauty, M.
CH10-1
Sauty, M.
CH16-1
Sauvagnat, A. MoP-GR-37
Savant, P. C.
ED13-5
Savant, P. C.
LN1-1
Sawayama, Y.
ThP-GR-4
Scanlon, O. D. TuP-CH-33
Schaaf, P.
MoP-CH-28

Schilling, M.
MoP-CH-5
Schilling, M.
OD1-5
Schilling, M.
OD6-1
Schilling, M.
ThP-CH-5
Schilling, M.
TuP-CH-22
Schippers, D.
ThP-ED-16
Schlesser, R.
GR15-6
Schlesser, R.
TuP-CH-24
Schmid, A.
MoP-ED-33
Schmid, A.
TuP-CH-5
Schmid, K. A.
CH16-1
Schmidt, G.
CH13-2
Schmidt, G.
CH13-4
Schmidt, G.
CH3-2
Schmidt-Grund, R.
MoP-CH-28
Schönweger, G.
GR13-5
Schönweger, G.
GR13-6
Schörmann, J.
ED16-1
Schörmann, J.
GR11-2
Schörmann, J. ThP-CH-26
Schörmann, J. TuP-GR-39
Schöttler, G.
MoP-OD-27
Schöttler, G.
TuP-OD-5
Schowalter, J. L.
GR15-1
Schowalter, J. L.
OD5-1
Schubert, M.
ThP-CH-24
Schubert, M.
ThP-CH-25
Schuermann, H.
CH13-2
Schülli, T.
CH8-3
Schulz, A.
OD5-3
Schulz, S.
CH11-3Schulz, S.
CH12-2
Schulz, S.
GR16-5Schulz, T.
CH8-3
Schutte, H.
MoP-CH-LN3
Schwar, J.
ThP-CH-11
Schwarz, T. U.
GR10-2
Schwarz, T. U.
OD12-5
Schwarz, T. U.
OD12-6
Schwarz, T. U.
OD4-4
Schwarz, T. U.
OD5-5
Schwarz, T. U. ThP-OD-17
Schwarz, T. U.
ThP-OD-3
Schwarz, T. U. TuP-OD-25
Sediri, A.
ThP-GR-LN4
Seida, M.
OD15-5
Seidlitz, D.
MoP-CH-12
Seino, K.
TuP-ED-24
Sekiguchi, H.
OD10-7
Sekiguchi, H.
OD11-4
Sekiguchi, H.
OD8-3
Sekiguchi, H.
TuP-OD-20
Sekiyama, K.
TuP-ED-16
Semlali, E.
MoP-GR-37
Semond, F.
ED11-2
Semond, F.
ED16-5
Semond, F.
GR9-6
Semond, F.
LN2-8
SEMOND, F.
MoP-CH-2
200

Semond, F.
MoP-ED-20
Semond, F.
TuP-CH-26
Sen, S.
MoP-OD-9
Seo, J.
TuP-OD-7
Seo, T.
TuP-GR-13
Seong, T.
LN2-3
Seong, T.
OD14-1
Serafinczuk, J. TuP-CH-14
Serafińczuk, J.
CH5-7
Serafińczuk, J. MoP-GR-39
Servant, F.
ThP-GR-LN4
Setogawa, S.
OD10-7
Shalish, I.
TuP-CH-25
Shan, X.
CH16-2
Shan, X.
OD11-5
Shanbhag, A.
ED6-4
Shang, W.
TuP-CH-LN2
Shao, H.
TuP-ED-10
Shao, P.
ED3-7
Shao, P.
GR8-3
Shao, Q.
CH4-3
Shao, Q.
CH4-4
Shao, W.
ThP-ED-28
Sharps, P.
ED4-3
Shauloff, N.
TuP-CH-25
Sheehan, C.
GR14-5
Shen, B.
CH11-1
Shen, B.
CH15-1
Shen, B.
CH8-1
Shen, B.
GR13-7
Shen, B.
GR2-1
Shen, B.
JT1-2
Shen, B.
MoP-ED-10
Shen, B.
MoP-OD-10
Shen, B.
MoP-OD-2
Shen, B.
OD2-1
Shen, B.
ThP-CH-27
Shen, B.
ThP-CH-36
Shen, B.
ThP-GR-20
Shen, B.
ThP-GR-6
Shen, B.
TuP-ED-28
Shen, B.
TuP-OD-16
Shen, C.
MoP-CH-27
Shen, C.
ThP-OD-15
Shen, D.
OD11-5
Shen, J.
ThP-GR-6
Shen, K.
ThP-OD-LN3
Shen, S.
CH4-3
Shen, S.
ED4-6
Shen, S.
OD9-1
SHEN, X.
MoP-CH-17
Shen, Z.
ThP-CH-27
Sheng, B.
OD2-1
Sheng, S.
CH8-1
Sheu, h.
MoP-ED-7
Shi, J.
ED12-5
Shi, Z.
MoP-GR-1
Shibata, K.
OD3-4
Shibata, K.
TuP-CH-2
Shibata, T.
CH7-6

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Shibui, S.
OD9-4
SHIEH, D.
ThP-ED-2
Shields, P.
MoP-GR-37
Shigekawa, N.
ED10-3
Shih, P.
ED12-2
Shih, P.
ED12-4
Shih, P.
MoP-ED-35
Shikata, S.
TuP-ED-LN5
Shim, J.
MoP-OD-6
Shim, J.
ThP-OD-2
Shim, J.
TuP-CH-17
Shim, J.
TuP-OD-7
Shima, A.
JT1-3
Shima, A.
OD7-5
Shima, A.
ThP-GR-31
Shima, A.
ThP-OD-10
Shima, A.
ThP-OD-20
Shima, K.
CH12-3
Shima, K.
CH5-4
Shima, K.
CH6-1
Shima, K.
CH6-3
Shima, K.
CH9-2
Shima, K.
OD13-1
Shima, K.
OD13-3
Shima, K.
ThP-GR-16
Shimazu, H.
GR2-2
Shimizu, M.
MoP-ED-27
Shimizu, T.
TuP-GR-20
Shimura, T.
TuP-ED-19
Shimura, T.
TuP-ED-20
Shin, D.
MoP-OD-6
Shin, D.
ThP-OD-2
Shin, D.
TuP-CH-17
Shin, D.
TuP-OD-7
Shin, Y.
MoP-ED-29
Shin, Y.
TuP-OD-2
Shindo, G.
CH6-5Shindo, R.
ThP-OD-12
Shinohara, G.
TuP-OD-20
Shinohara, H.
OD6-4
Shinohara, K.
ED11-1
Shiojima, K.
ThP-CH-21
Shirai, M.
GR9-7
Shirai, M.
OD8-3
Shiraishi, K.
CH15-4
Shiraishi, K. ThP-GR-LN5
Shiraishi, K.
TuP-ED-24
Shiraishi, K.
TuP-GR-31
Shirsat, A.
ThP-OD-7
Shojiki, K.
CH1-3
Shojiki, K.
CH9-4
Shojiki, K.
GR3-2
Shojiki, K.
GR4-1
Shojiki, K.
GR4-2
Shojiki, K.
GR5-7
Shojiki, K.
GR9-5
Shojiki, K.
OD16-4
Shu, J.
ED16-4
Shu, Q.
ThP-ED-16
Shuhaimi, A. MoP-GR-20

Shwe, E. K. T.
CH15-2
Si, Z.
ThP-GR-7
Sidikejiang, S. MoP-CH-6
Siekacz, M.
CH3-3
Siekacz, M.
GR11-3Siekacz, M.
OD11-3Sierakowski, K.
CH16-5Sierakowski, K.
CH6-2
Sierakowski, K.
ED2-2
Sierakowski, K.
GR3-3
Sierakowski, K.
GR8-7
Sierakowski, K. MoP-GR-36
Sierakowski, K. TuP-GR-44
Sierakowski, K. TuP-GR-8
Sierakowski, P. K.
CH6-4
Sierakowski, P. K.
MoP-CH-18
Sierakowski, P. K.
MoP-CH-19
Silva, D. B.
GR17-6
Simin, G.
ED10-6
Simin, G.
GR7-3
Simin, G.
GR8-5
Simon, J.
OD15-2
Simon, J.
OD15-4
Singh, M. S.
GR6-4
Singh, M. S.
MoP-OD-15
Singh, N.
ED13-3
Singh, N.
ED9-4
Singh, N.
ThP-ED-11
Singh, N.
ThP-GR-9
Singh, U.
MoP-OD-23
Singh, U.
ThP-OD-14
Singh, U.
ThP-OD-5
Singh, U.
TuP-ED-17
Singh, U.
TuP-ED-37
Sinnwell, M.
LN1-4
Sirai, M.
OD11-4Sitar, Z.
ED2-2
Sitar, Z.
ED7-5
Sitar, Z.
GR18-1
Sitar, Z.
GR3-1
Sitar, Z.
GR4-5
Sitar, Z.
GR6-7
Skierbiszewski, C. CH3-3
Skierbiszewski, C. GR11-3
Skierbiszewski, C. GR5-2
Skierbiszewski, C.
TuP-OD-22
Skierbiszewski, C.
TuP-OD-26
Skolnick, S. M.
CH13-5
Skryabin, V. D.
CH13-5
Slimani Tlemcani, T.
ThP-CH-19
Slimi, Y.
MoP-CH-28
Slischka, B.
OD15-3Smalc Koziorowska, J.
ThP-OD-25
Smalc-Koziorowska, J.
201

CH8-3
Smalc-Koziorowska, J.
GR11-3Smalc-Koziorowska, J.
ThP-CH-12
Smalc-Koziorowska, J.
ThP-CH-18
Smalc-Koziorowska, J.
TuP-GR-18
Smalc-Koziorowska, J.
TuP-OD-22
Smith, J.
OD4-6
Smith, L. M.
GR17-3Smith, M.
ED4-3
So, B.
ED7-3
So, B.
GR8-4
Sobanska, M.
ThP-GR-26
Sobanska, M.
ThP-GR-27
Sochacki, T.
CH5-5
Sochacki, T.
CH6-4
Sochacki, T.
GR12-2
Sochacki, T.
GR12-3
Sochacki, T.
GR12-7
Sochacki, T.
GR3-3
Sochacki, T.
GR7-1
Sochacki, T.
GR8-7
Sochacki, T.
MoP-CH-18
Sochacki, T.
MoP-CH-19
Sochacki, T.
MoP-GR-36
Sochacki, T.
TuP-GR-8
Sodhi, T.
CH14-3
Solnyshkov, D.
OD16-1
Soman, R.
ED10-2
Song, H.
MoP-CH-LN1
Song, J.
MoP-GR-30
Song, J.
MoP-GR-44
Song, J.
TuP-OD-3
Song, W.
MoP-CH-4
Song, Y.
LN2-4
Song, Y.
TuP-GR-LN2
Sooyong, M.
OD15-5Souissi, H.
OD16-1
Soydal, Ö.
ED9-5
Speck, J.
OD14-2
Speck, J.
OD14-6
Speck, J.
OD4-2
Speck, J.
OD4-6
Speck, S. J.
CH10-1
Speck, S. J.
CH16-1
Speck, S. J.
ED2-4
Speck, S. J.
ED3-1
Speck, S. J.
GR11-5
Speck, S. J.
GR17-1
Speck, S. J.
GR3-5
Speck, S. J.
MoP-CH-20
Speck, S. J.
OD1-3
Speck, S. J.
OD14-5
Speck, S. J.
TuP-OD-29
Speiser, E.
MoP-CH-12
Spencer, A. J.
ED12-1

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Spencer, A. J.
LN1-3
Splawn, H.
LN2-2
Srivastava, A.
ED15-5
Srivastava, A.
GR16-7
Stanchu, H.
ThP-GR-27
Stanczyk, S.
MoP-OD-29
STANCZYK, S.
OD12-4
Stanczyk, S.
TuP-CH-16
Stanishev, V.
GR7-4
Stanishev, V.
ThP-CH-24
Stanishev, V.
TuP-CH-6
Staszczak, G.
CH16-5
Staszczak, G.
CH3-3
Staszczak, G.
GR11-3
Staszczak, G.
ThP-CH-12
Staszczak, G.
TuP-OD-22
Staszewska, L. E.ThP-CH-32
Steinfeldt, J.
ED4-3
Steinfeldt, J.
GR17-3
Stephenson, B. G.
ThP-GR-20
Stephenson, K.
GR7-3
Stephenson, K.
GR8-5Stępniewski, R. MoP-ED-32
Stępniewski, R. MoP-GR-31
Stoddard, N.
GR16-3
Stoian, M.
MoP-GR-26
Stoklas, R.
ED16-3
Storm, F. D.
TuP-CH-7
Strain, M.
MoP-CH-14
Strak, P.
TuP-CH-LN1
Strak, P.
TuP-OD-30
Stranak, P.
ThP-CH-16
Stranak, P.
ThP-GR-8Straňák, P.
GR13-3Straňák, P.
ThP-GR-10
Strate, J.
ThP-GR-LN4
Straubinger, T.
GR15-4
Straubinger, T. ThP-GR-LN3
Streckenbach, T.
CH11-3Streicher, I.
GR13-3Streicher, I.
MoP-ED-33
Streicher, I.
ThP-CH-16
Streicher, I.
ThP-GR-10
Strelchuk, V.
GR16-2
Strittmatter, A.
CH13-2
Strittmatter, A.
CH13-4
Strittmatter, A.
CH3-2
Strittmatter, A. TuP-ED-23
Su, H.
MoP-GR-5
Su, H.
ThP-GR-3
SU, V.
OD10-4Suda, J.
CH15-5Suda, J.
CH15-6
Suda, J.
CH17-4Suda, J.
CH5-2
Suda, J.
CH6-1
Suda, J.
CH6-3
Suda, J.
CH6-6
Suda, J.
CH7-1

Suda, J.
ED12-3Suda, J.
ED14-7Suda, J.
ED2-1
Suda, J.
ED5-5
Suda, J.
ED9-1
Suda, J.
ED9-2
Suda, J.
ThP-CH-28
Suda, J.
ThP-ED-31
Suda, J.
TuP-ED-22
Suda, N.
OD15-5
Suehiro, Y.
OD2-3
Suehiro, Y.
OD2-5
Suffczynski, J.
CH12-4
Sugawara, Y.
CH17-3
Sugawara, Y.
CH8-4
Sugino, T.
ED11-5Sugiyama, H.
ThP-ED-15
Sugiyama, S.
TuP-GR-1
Sugiyama, T.
ED11-5
Sui, J.
CH4-2
Suihkonen, S. MoP-OD-23
Sulmoni, L.
OD13-4
Sulmoni, L.
OD6-1
Sumi, T.
GR2-3
Sumi, T.
MoP-GR-15
Sumida, K.
CH6-6
Sumishi, K.
OD1-4
Sumita, M.
ED5-7
Sumitani, K.
CH11-5
Sumitani, K.
CH14-4
Sumitani, K.
CH5-6
Sumiya, M.
ED5-7
Sumiya, M.
ThP-CH-31
Sun, C.
MoP-GR-LN3
Sun, d. H.
TuP-GR-28
Sun, F.
ED10-4Sun, H.
CH4-5
Sun, M.
MoP-OD-19
Sun, N.
MoP-ED-15
Sun, N.
ThP-ED-22
Sun, Q.
JT2-4
Sun, Q.
MoP-ED-28
Sun, Q.
MoP-ED-4
Sun, Q.
MoP-GR-16
Sun, Q.
OD10-6
Sun, Q.
TuP-ED-34
Sun, Q.
TuP-GR-32
Sun, W.
ThP-GR-12
Sun, X.
GR15-7
Sun, X.
MoP-ED-4
Sun, X.
MoP-GR-1
Sun, X.
MoP-OD-1
Sun, X.
MoP-OD-12
Sun, X.
TuP-GR-32
Sun, X.
TuP-OD-17
Sun, Z.
ThP-ED-18
Sun, Z.
ThP-ED-19
Sun, Z.
ThP-GR-23
Sun, Z.
TuP-ED-28
Sundaram, S.
ED15-5202

Sundaram, S.
Sundaram, S.
Sundaram, S.

GR14-1
GR16-7
MoP-GR-25

Sundarapandian, B.
ThP-CH-14
Sundarapandian, B.
ThP-GR-8
Sung, C.
TuP-GR-LN2
Susilo, N.
OD13-4
Susilo, N.
OD5-3
Susilo, N.
OD6-1
Suski, T.
CH3-3
Suski, T.
OD8-5
Suski, T.
TuP-OD-22
Suwa, T.
ED5-4
Suyama, A.
TuP-CH-15
Suzuki, J.
OD9-4
Sven, B.
GR15-5
Syouji, A.
ThP-CH-2
Syouji, A.
TuP-CH-4
Szerling, A.
ED4-2
Szerling, A.
MoP-ED-34
Szerling, A.
ThP-ED-14― T ―Tackeuchi, T.
TuP-OD-18
Tadatomo, K.
CH17-3
Tadjer, J. M.
ED12-1
Tadjer, J. M.
LN1-3
Tajima, J.
ED14-3
Tak, T.
CH16-1
Tak, T.
GR3-5
Tak, T.
OD14-5
Tak, T.
OD4-2
Takada, N.
MoP-ED-27
Takahashi, H.
ED9-1
Takahashi, H.
ED9-2
Takahashi, M.
JT1-3
Takahashi, M.
OD7-5
Takahashi, M. ThP-GR-31
Takahashi, M. ThP-OD-10
Takahashi, M. ThP-OD-20
Takahashi, R.
OD9-4
Takahashi, T.
OD14-3
Takahashi, Y. MoP-GR-29
Takahata, H.
GR18-3
Takahata, H.
TuP-OD-18
Takano, Y.
OD7-2
Takashima, S.
CH6-1
Takashima, S.
ED14-7
Takashima, S.
ED5-3
Takashima, S.
ED5-4
Takashima, S. ThP-CH-22
Takashima, Y. MoP-GR-13
Takashima, Y.
MoP-GR-7
Takashima, Y. MoP-GR-LN1
Takatsu, U.
ThP-CH-23
Takatsu, U.
TuP-CH-23
Takayama, J.
ThP-CH-34
Takeda, H.
ThP-CH-17

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Takeda, H.
ThP-GR-4
Takeda, N.
GR17-2
Takeda, T.
GR9-3
Takemura, A. MoP-GR-29
Takemura, K.
TuP-GR-24
Takeuchi, H.
TuP-OD-20
Takeuchi, J.
TuP-GR-14
Takeuchi, K.
CH10-5
Takeuchi, K.
OD15-5
Takeuchi, T.
GR18-3
Takeuchi, T.
GR6-6
Takeuchi, T.
JT1-3
Takeuchi, T.
MoP-GR-21
Takeuchi, T.
MoP-GR-9
Takeuchi, T.
OD13-1
Takeuchi, T.
OD13-3
Takeuchi, T.
OD2-3
Takeuchi, T.
OD3-4
TAKEUCHI, T.
OD4-5
Takeuchi, T.
OD5-2
Takeuchi, T.
OD5-4
Takeuchi, T.
OD7-5
Takeuchi, T.
OD9-4
Takeuchi, T.
ThP-GR-31
Takeuchi, T.
ThP-OD-10
Takeuchi, T.
ThP-OD-20
Takeuchi, T.
ThP-OD-4
Takeuchi, T.
TuP-CH-2
Takeuhi, T.
GR6-2
Takeuti, T.
OD2-5
Takiguchi, M.
CH14-6
Takimoto, M.
TuP-ED-25
Takino, J.
GR2-3
Taliyan, R.
ThP-ED-LN4
Tallur, S.
ThP-ED-4
Tamano, T.
GR4-2
Tamano, T.
OD16-4
Tamariz, S.
ED11-2
Tamariz, S.
ED16-5
Tamariz, S.
MoP-ED-20
Tamariz, S.
TuP-CH-26
Tamsaout, D. MoP-GR-37
Tan, G.
ThP-OD-1
Tan, Q.
OD10-5
Tanaka, A.
ED9-6
Tanaka, A.
LN2-3
Tanaka, D.
CH17-4
Tanaka, G.
OD2-4
Tanaka, K.
ED12-3
Tanaka, N.
ThP-ED-31
Tanaka, R.
CH6-1
Tanaka, R.
ED14-7
Tanaka, R.
ED5-3
Tanaka, R.
ED5-4
Tanaka, R.
ThP-CH-22
Tanaka, S.
ED6-2
Tanaka, T.
OD13-2
Tanaka, T.
TuP-GR-26
Tandryo, R.
GR12-6
Tandryo, R.
TuP-GR-12

Tandryo, R.
TuP-GR-LN1
Tang, A.
ED13-7
Tang, A.
GR7-6
Tang, L. A.
CH2-1
Tang, L. A.
GR13-4
Tang, N.
TuP-ED-28
Tang, S.
MoP-GR-22
Tang, X.
MoP-GR-3
Tang, X.
ThP-OD-27
Tang, X.
ThP-OD-29
Tang, X.
TuP-ED-38
Tang, X.
TuP-ED-4
Tang, X.
TuP-ED-LN2
Tani, K.
CH13-6
Tani, K.
CH9-3
Taniguchi, S.
CH11-5
Taniguchi, S.
ThP-OD-9
Taniguchi, T.
GR16-1
Taniguchi, Y.
OD15-5
Tanikawa, T.
CH13-1
Tanikawa, T.
GR17-2
Tanikawa, T.
GR4-2
Tanikawa, T.
GR5-5
Tanikawa, T.
OD16-3
Tanikawa, T.
OD16-4
Taniyasu, Y.
CH11-4
Taniyasu, Y.
CH14-6
Taniyasu, Y.
ED13-6
Taniyasu, Y.
GR5-3
Taniyasu, Y.
MoP-GR-28
Tao, H.
ThP-GR-3
Tao, L.
TuP-OD-8
Tao, T.
ED3-7
Tao, T.
GR8-3tao, T.
MoP-OD-4
Tao, T.
TuP-OD-9
Tarenko, J.
ED4-2
Tarenko, J.
MoP-ED-34
Tarenko, J.
ThP-ED-14
Targowski, G. TuP-OD-22
TARIQ, F.
MoP-OD-8
Tariq, F.
ThP-GR-34
Tariq, F.
ThP-GR-35
Tasker, P.
ThP-ED-7
Tasker, P.
TuP-CH-13
Tassin, P.
OD5-5
Tassin, P.
TuP-OD-25
Tatarczak, P.
CH12-4
Tatarczak, P.
GR16-6
Tatebayashi, J.
CH16-4
Tatebayashi, J. MoP-GR-47
Tatebayashi, J.
OD2-4
Tateno, K.
CH11-4
Tateno, K.
CH14-6
Taube, A.
ED4-2
Taube, A.
MoP-ED-34
Taube, A.
ThP-ED-14
Taube, A.
TuP-ED-11
Taube, A.
TuP-GR-41
Tauzowski, P.
ThP-CH-12
203

Tchernycheva, M. CH14-3
Tchernycheva, M.
JT2-3
Tchernycheva, M.
MoP-CH-LN1
Tchernycheva, M.
MoP-GR-37
Tchernycheva, M.
ThP-CH-35
Tchernycheva, M.
ThP-GR-40
Tchoulfian, P.
OD7-3
Templier, F.
JT1-1
Templier, F.
ThP-CH-1
Tepaß, J.
OD12-5Tepaß, J.
OD12-6
Terai, S.
TuP-ED-16
THAALBI, H. MoP-OD-8
Thaalbi, H.
ThP-GR-35
Thakur, K. N. ThP-OD-13
Thakur, K. N. TuP-OD-27
Thakur, R. R. ThP-ED-LN4
Thapa, S.
MoP-GR-43
Thomas, A.
ThP-GR-LN4
Thompson, C. ThP-GR-20
Thorsell, M.
GR7-4
Thorsell, M.
ThP-CH-20
Tian, A.
MoP-GR-14
Tian, A.
OD3-2
Tian, A.
ThP-CH-30
Tian, A.
ThP-OD-16
Tian, L.
TuP-CH-13
Tian, P.
CH16-2
Tian, P.
OD11-5
Tian, Q. A.
OD12-2
Tian, S.
MoP-OD-1
Tian, W.
TuP-OD-14
Tian, Z.
TuP-ED-30
Timmerman, D.
CH16-4
Tjiptoharsono, F. OD10-2
Tlemcani, S. T. ThP-GR-10
Toda, S.
LN2-6
Togashi, R.
CH13-3Togashi, R.
ThP-GR-32
Togashi, R.
ThP-OD-12
Tohei, T.
CH11-5Tohei, T.
CH17-1
Tohei, T.
CH5-6
Toita, M.
GR15-3
Toita, M.
TuP-GR-1
Tokarczyk, M.
CH12-4
Tokarczyk, M.
GR16-6
Tokarczyk, M. MoP-GR-31
Tokozumi, T.
ED5-5
Tomigahara, K. TuP-ED-19
Tomita, A.
MoP-GR-13
Tomita, A.
MoP-GR-7
Tomita, A.
MoP-GR-LN1
Tomita, H.
ED5-8-LN
Tomita, K.
CH6-7
Tomita, K.
ED4-1

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Tomita, K.
ED5-2
Tomiya, S.
CH3-4
Tomoyuki, T.
OD16-5
Tompkins, R.
ED15-2
Tonisch, K.
MoP-CH-28
Tonomura, M.
CH10-5Toon, M.
MoP-CH-14
Torregrosa, F.
TuP-CH-6
Torrengo, S.
GR17-4
Torrengo, S.
OD15-4
Torrengo, S.
TuP-GR-22
Torres Vásquez, E. OD5-6
Toth, M.
CH12-5
Toyoda, H.
TuP-CH-2
Trager-Cowan, C.
MoP-CH-16
Trageser, E.
OD3-3
Trageser, E.
OD4-6
Trampert, . TuP-GR-LN4
Trampert, A.
LN2-7
Trampert, A.
MoP-GR-26
Tran Caliste, T.
GR12-7
Tran, D.
GR8-4
Tran, D.
TuP-CH-6
Tran, M. L.
TuP-CH-14
Tran, Q. D.
MoP-CH-29
Trassoudaine, A.
MoP-GR-37
Travers, L.
CH14-3
Travers, L.
ThP-CH-35
Travers, L.
ThP-GR-40
Trivellin, N.
OD13-4
Trzeciakowski, W. CH3-3
Tsai, C.
MoP-OD-LN3
Tsai, T.
CH10-1
Tsai, T.
TuP-OD-29
Tschirky, T.
TuP-GR-34
Tseng, N. E.
TuP-OD-LN1
Tsuchiya, M.
GR4-1
Tsuchiya, M.
LN2-1
Tsuda, Y.
ED5-7
Tsukammoto, R.
MoP-OD-28
Tsukasaki, T. MoP-CH-22
Tsusaka, Y.
CH17-3Tsusaka, Y.
CH8-4
Tu, P.
MoP-ED-31
Tu, P.
MoP-ED-7
Tu, P.
ThP-ED-2
Tuomisto, F.
CH16-5
Tuomisto, F.
TuP-CH-22
Turczynski, J. MoP-GR-31
Turek, M.
CH6-4
Turek, M.
GR3-3
Turek, M.
MoP-CH-18
Turek, M.
MoP-CH-19
Turkulets, Y.
TuP-CH-25
Turner, W.
ED13-4
Turos, A.
GR5-2
Turos, W. A.
ThP-CH-15

Turski, H.
OD11-3
Turski, H.
TuP-OD-26
Tweedie, J.
GR4-5
Tyagi, P.
ThP-GR-2
Tye, G.
CH8-2― U ―Uchida, S.
OD9-4
Udai, A.
TuP-OD-27
Udwary, K.
LN2-2
Ueda, S.
ED14-3
Uedono, A.
CH6-1
Uedono, A.
CH6-3
Uedono, A.
CH9-2
Uedono, A.
MoP-CH-18
Uemukai, M.
CH13-1
Uemukai, M.
GR17-2
Uemukai, M.
GR4-2
Uemukai, M.
GR5-5
Uemukai, M.
OD16-3
Uemukai, M.
OD16-4
Uemukai, M.
OD16-5
Uemura, T.
OD2-4
Ueno, K.
CH6-1
Ueno, K.
ED14-7
Ueno, K.
ED5-3
Ueno, K.
ED5-4
Ueno, K.
GR13-2
Ueno, K.
GR8-6
Ueno, K.
GR9-1
Ueno, K.
GR9-3
Ueno, K.
GR9-4
Ueno, K.
ThP-CH-22
Ueno, K.
ThP-GR-22
Uesugi, K.
CH17-1
Uesugi, K.
CH9-2
Uesugi, K.
CH9-3
Uesugi, K.
CH9-4
Uesugi, K.
ED3-4
Uesugi, K.
GR4-1
Uesugi, K.
GR4-2
Uesugi, K.
GR4-4
Uesugi, K.
GR5-7
Uesugi, K.
GR9-5
Uesugi, K.
MoP-CH-8
Uesugi, K.
TuP-CH-3
Uesugi, T.
ED2-1
Uhlig, L.
OD12-5
Uhlig, L.
OD12-6
Uhlig, L.
OD5-5
Uhlig, L.
ThP-OD-17
Uhlig, L.
TuP-OD-25
Umehara, N.
CH12-3
Upadhyay, B. B.
MoP-ED-19
Upadhyay, B. B. ThP-ED-12
Upadhyaya, K.
TuP-OD-1
Uratani, H.
ED10-3
Urbaszek, B.
TuP-CH-34
Uredat, P.
ThP-CH-26
Urteaga, M.
ED11-1
204

Urushiyama, M.
ED3-4
Usagawa, M.
CH10-5
Usami, N.
TuP-ED-29
Usami, S.
GR12-1
Usami, S.
GR12-6
Usami, S.
GR2-3
Usami, S.
MoP-GR-15
Usami, S.
TuP-GR-12
Usami, S.
TuP-GR-LN1
Usami, Y.
ThP-ED-20― V ―Valdueza-Felip, S.
MoP-OD-19
Valenzuela, J.
ThP-GR-13
Valera, L.
ThP-GR-39
Valera, L.
ThP-OD-11
Valéra, L.
JT2-3
Valvin, P.
GR16-2
Valvin, P.
LN2-5
Valvin, P.
MoP-CH-LN3
Valvin, P.
OD10-1
Valvin, P.
ThP-CH-LN1
Van de Walle, G. C. CH10-6
van Deurzen, L.
CH8-6
van Deurzen, L.
OD11-3
Van Erp, R.
ED10-5
Vanhove, B.
GR11-1
Vanjari, C. S.
MoP-ED-8
Varghese, A.
TuP-CH-13
Varghese, B.
ThP-GR-11
Varghese, B.
ThP-GR-9
Veit, P.
CH13-4
Veit, P.
CH3-2
Velazquez-Rizo, M. OD8-1
Vélez, C.
OD12-3Venkatesan, N.
ED13-4
Vennéguès, P.
GR14-1
Vennéguès, P.
JT1-1
Vennéguès, P.
ThP-CH-1
Venugopalarao, A.
MoP-ED-8
Venugopalarao, A.
TuP-GR-30
Verghese, A.
ThP-ED-7
Vergin, M.
MoP-OD-27
Vergin, M.
TuP-OD-5
VERMEERSCH, R. OD6-5
Verzellesi, G.
CH4-1
Vescan, A.
ThP-ED-16
Vescan, A.
ThP-ED-3
Vescan, A.
TuP-ED-23
Veux, g.
MoP-CH-10
Veux, G.
MoP-OD-7
Veux, G.
OD15-4
VEUX, G.
TuP-GR-2
Veytizou, C.
ThP-GR-LN4
Vézian, S.
GR10-3Villamin, M.
MoP-ED-36
Vladimirova, M. TuP-CH-34
Vohra, A.
CH7-7

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Vohra, A.
ED1-2
Volpert, M.
OD15-2Volz, K.
GR11-2Volz, K.
TuP-GR-39
von Hauff, E.
ThP-GR-29
von Hauff, E.
TuP-GR-36
Voss, L. P.
ED15-5
Voss, P.
GR16-7
Voss, P.
MoP-GR-25
Voung, P.
MoP-GR-25
Vuong, P.
ED15-5
Vuong, P.
GR14-1
Vuong, P.
GR16-7― W ―Waack, M. J.
MoP-CH-30
Waag, A.
GR4-6
Waag, A.
JT3-5
Waag, A.
MoP-CH-13
Waag, A.
MoP-CH-16
Waag, A.
MoP-GR-23
Waag, A.
MoP-OD-27
Waag, A.
TuP-ED-13
Waag, A.
TuP-OD-5
Wada, K.
CH3-5
Wada, M.
ThP-GR-4
Wada, Y.
ThP-GR-28
Wada, Y.
TuP-OD-10
Wade, E.
ED13-1
Wade, K. E.
CH2-4
Wagner, R. M.
CH12-5Wagner, R. M.
ThP-CH-5
Wakabayashi, G. TuP-GR-26
Wakahara, A. TuP-ED-LN5
Wakamoto, Y.
CH2-3
Wakamoto, Y.
ThP-ED-35
Wakejima, A.
ED11-5
Wakejima, A.
ED9-1
Wakejima, A.
ED9-2
Walker, M. P.
CH13-5
Walkosz, W.
ThP-GR-20
Wallis, J. D.
CH16-3
Wallis, J. D.
CH17-2
Wallis, J. D.
CH4-6
Walsh, A.
TuP-CH-33
Waltereit, P.
MoP-ED-26
Walton, S.
MoP-GR-42
Walukiewicz, W. TuP-CH-28
Wang, B.
ED3-6
Wang, B.
TuP-OD-17
Wang, C.
MoP-ED-3
Wang, C.
TuP-ED-LN1
Wang, D.
GR13-1
Wang, D.
GR13-1
Wang, D.
MoP-CH-24
Wang, D.
MoP-OD-2
Wang, D.
TuP-CH-15
Wang, D.
TuP-GR-4
Wang, f. W.
ED3-2
Wang, G.
ThP-GR-1
Wang, G.
ThP-OD-19

Wang, H.
Wang, H.
Wang, H.
Wang, H.
Wang, H.
Wang, H.
Wang, H.
Wang, H.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, j.
Wang, J.
Wang, J.
Wang, J.
wang, j.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, J.
Wang, K.
Wang, K.
Wang, K.
Wang, K.
Wang, L.
Wang, L.
Wang, L.
Wang, L.
Wang, L.
Wang, M.
Wang, M.
Wang, P.
Wang, P.
Wang, P.
Wang, P.
Wang, P.
Wang, P.
Wang, P.
Wang, P.
Wang, Q.
Wang, Q.
Wang, Q.
Wang, Q.
Wang, R.
Wang, R.
Wang, R.
Wang, R.
Wang, T.
Wang, T.
Wang, T.

MoP-OD-11
MoP-OD-20
MoP-OD-22
MoP-OD-25
ThP-ED-28
TuP-ED-12
TuP-ED-29
TuP-ED-33
ED1-3
ED4-4
GR13-7
GR4-7
GR6-5
JT2-5
MoP-CH-27
MoP-CH-9
MoP-GR-18
MoP-GR-LN3
MoP-OD-1
MoP-OD-10
MoP-OD-13
ThP-ED-30
ThP-GR-1
ThP-GR-7
ThP-OD-15
TuP-ED-29
TuP-ED-33
TuP-GR-4
TuP-OD-11
TuP-OD-16
ED3-7
GR8-3
TuP-ED-9
TuP-OD-19
GR4-7
MoP-GR-LN3
MoP-OD-10
TuP-GR-16
TuP-OD-19
MoP-OD-25
TuP-ED-33
CH15-1
CH4-5
CH8-1
ED8-4
GR13-1
GR13-7
MoP-CH-9
ThP-CH-36
GR15-7
JT1-2
MoP-ED-4
MoP-OD-2
GR13-7
MoP-CH-9
MoP-GR-5
ThP-OD-16
CH15-1
CH8-1
GR13-7
205

Wang, T.
GR2-1
Wang, T.
MoP-CH-9
Wang, T.
MoP-OD-LN3
Wang, T.
OD2-1
Wang, T.
ThP-CH-36
Wang, V.
TuP-GR-28
Wang, W.
ThP-ED-18
Wang, W.
ThP-ED-19
Wang, X.
CH15-1
Wang, X.
CH8-1
Wang, X.
CH9-5
Wang, X.
ED10-4Wang, X.
ED12-5
Wang, X.
GR13-7
Wang, X.
GR2-1
Wang, X.
MoP-ED-18
Wang, X.
OD14-3
Wang, X.
OD2-1
Wang, X.
ThP-CH-36
Wang, X.
TuP-CH-27
Wang, X.
TuP-CH-8
Wang, X.
TuP-ED-38
Wang, X.
TuP-OD-16
Wang, Y.
ED13-3
Wang, Y.
ED9-4
Wang, Y.
GR8-3
Wang, Y.
MoP-OD-17
Wang, Y.
OD13-5
Wang, Y.
OD3-2
Wang, Y.
ThP-CH-3
Wang, Y.
ThP-GR-1
Wang, Y.
ThP-GR-3
Wang, Y.
ThP-OD-8
Wang, Y.
TuP-CH-1
wang, y.
TuP-GR-5
Wang, Z.
CH16-2
Wang, Z.
MoP-ED-13
Wang, Z.
MoP-GR-4
Wang, Z.
MoP-OD-11
WANG, Z.
ThP-OD-21
Wang, Z.
TuP-GR-16
Wang, Z.
TuP-GR-3
Wannous, B.
JT1-1
Wannous, B.
ThP-CH-1
Washida, S.
GR12-6
Watanabe, H.
ED1-3
Watanabe, H.
ED4-4
Watanabe, H.
ED9-6
Watanabe, H.
GR1-4
Watanabe, H. MoP-CH-24
Watanabe, H. MoP-GR-34
Watanabe, H.
ThP-GR-14
Watanabe, H.
TuP-CH-15
Watanabe, H.
TuP-ED-19
Watanabe, H.
TuP-ED-20
Watanabe, H.
TuP-GR-31
Watanabe, H.
TuP-GR-42
watanabe, R.
MoP-GR-21
Watanabe, R.
OD9-4
Watanabe, T.
ED9-2

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Watanabe, T.
OD3-1
Watanabe, Y.
CH7-6
Water, W.
TuP-ED-27
Weatherley, F. T.
OD4-4
Weatherley, F.K. T. CH10-2
Weatherley, T.
CH10-3
Wehbe, M.
ThP-CH-10
Wei, H.
ThP-ED-LN1
Wei, K.
CH7-3
Wei, K.
ED10-4Wei, K.
ED12-5Wei, K.
ThP-ED-13
WEI, L.
TuP-OD-12
Wei, Q.
ED7-4
Wei, S.
MoP-GR-22
Wei, T.
GR4-7
Wei, T.
MoP-OD-13
Wei, T.
TuP-OD-24
Wei, X.
MoP-OD-1
Wei, Y.
JT3-4
Weingärtner, R.
GR15-5
Weingärtner, R. MoP-GR-43
Weingärtner, R. ThP-CH-11
Weisbuch, C.
CH10-1
Weisbuch, C.
CH16-1
Weisbuch, C.
GR17-1
Weisbuch, C.
OD1-3
Weisbuch, C.
OD14-6
Weisbuch, C.
OD4-2
Weisbuch, C.
TuP-OD-29
Weman, H.
TuP-GR-11
Wen, K.
ThP-CH-20
Wen, P.
ThP-OD-22
Wen, Y.
TuP-ED-LN3
Weng, C.
ThP-CH-3
Wernicke, T.
MoP-CH-5
Wernicke, T.
OD13-4
Wernicke, T.
OD1-5
Wernicke, T.
OD5-3
Wernicke, T.
OD5-5
Wernicke, T.
OD5-6
Wernicke, T.
OD6-1
Wernicke, T.
ThP-CH-5
Wernicke, T.
TuP-CH-22
Wernicke, T.
TuP-OD-25
Wetzel, H. M.
TuP-CH-5
Weyers, M.
ED7-1
Weyers, M.
GR2-5
Weyers, M.
GR6-1
Weyers, M.
MoP-CH-12
Weyers, M.
OD6-1
Weyher, L. J.
GR12-3Weyher, L. J.
GR12-7
Weyher, L. J.
TuP-GR-8
Wieland, D.
CH7-4
Wierzbicka, A. ThP-GR-26
Wierzbicka, A. ThP-GR-27
Williams, A.
MoP-GR-20
Winchester, A. ThP-CH-29
Winkelmann, A.

MoP-CH-16
WISNIEWSKI, P. OD12-4
Wissel-Garcia, A.
ED2-4
Wissel-Garcia, A. OD14-5
Witzigmann, B.
OD5-3
Witzigmann, B. TuP-ED-13
Wójcicka, A.
JT1-4
Wolff, N.
GR13-5
Wolff, N.
GR13-6
Wong, M.
OD14-2
Wong, M.
OD4-6
Wong, M.
TuP-OD-4
Wong, Y.
ThP-OD-1
Woo, K.
ED10-2
Woo, K.
LN2-4
Woodward, J. MoP-GR-42
Wright, J.
LN1-6
Wu, C.
CH11-2Wu, F.
CH16-1
Wu, F.
GR11-5Wu, F.
GR3-5
Wu, F.
MoP-CH-20
Wu, F.
OD14-5Wu, F.
OD4-2
Wu, F.
TuP-OD-4
Wu, G.
MoP-GR-17
Wu, G.
ThP-GR-23
Wu, J.
MoP-GR-35
Wu, J.
MoP-GR-4
Wu, J.
TuP-GR-3
WU, L.
GR15-7
Wu, L.
MoP-GR-22
Wu, L.
OD10-5Wu, L. k.
ED1-4Wu, M.
CH4-5
Wu, M.
ED11-3Wu, Q.
TuP-CH-18
Wu, Q.
TuP-CH-9
Wu, Q.
TuP-ED-1
Wu, Q.
TuP-ED-6
Wu, S.
OD11-2
Wu, T.
OD10-4
Wu, X.
TuP-GR-32
Wu, Y.
CH10-1Wu, Y.
CH16-1Wu, Y.
MoP-ED-7
Wu, Y.
OD1-3
Wu, Y.
OD7-4
Wu, Y.
ThP-ED-19
Wu, Y.
ThP-ED-LN2
Wu, Y.
TuP-CH-32
Wu, Y.
TuP-ED-LN2
WU, Z.
CH5-6
Wunderer, T.
OD12-1
Wysmołek, A.
CH12-4
Wysmołek, A.
GR16-6
Wysmołek, A. MoP-ED-32
Wysmołek, A. MoP-GR-31
Wzorek, M.
MoP-ED-34
206

― X ―
Xia, C.
JT1-2
Xia, Y.
TuP-ED-9
Xia, Y. y.
ED1-4
Xiao, N.
TuP-ED-4
Xiao, S.
CH9-4
Xiao, S.
GR4-1
Xiao, S.
GR4-2
Xiao, Y.
OD7-4
Xie, H.
ED13-3
Xie, H.
ED9-4
Xie, Q.
ED10-7
Xie, Q.
ED12-2
Xie, Q.
ED12-4
Xie, Q.
ED6-3
Xie, Q.
ED6-5
Xie, Q.
MoP-ED-35
Xie, Z.
ED3-7
Xie, Z.
GR8-3
Xing, G.
ED15-3
Xing, G. H.
ED13-5
Xing, G. H.
LN1-1
Xing, G. H.
LN1-2
Xing, G. H.
LN1-5
Xing, G. H.
OD11-3
Xing, H.
CH2-5
Xing, H.
CH8-6
Xing, H.
ED16-2
Xing, H.
LN1-6
Xing, W.
ED8-3
Xing, W.
MoP-ED-13
Xing, W.
ThP-ED-9
Xing, W.
ThP-ED-LN1
Xing, X.
GR8-3
Xiong, B.
MoP-GR-LN3
Xiu, H.
CH17-2
Xiu, H.
ThP-OD-22
Xiu, H.
TuP-ED-30
Xiu, X.
GR8-3
Xu, C.
MoP-OD-LN3
Xu, D.
ThP-GR-20
Xu, F.
MoP-OD-10
Xu, F.
MoP-OD-4
Xu, F.
TuP-OD-16
Xu, F.
TuP-OD-9
Xu, G.
CH16-2Xu, H.
CH1-4
Xu, H.
TuP-CH-1
Xu, J.
MoP-OD-LN3
Xu, J. F.
CH11-1
Xu, K.
CH16-2Xu, K.
MoP-CH-4
Xu, K.
ThP-GR-1
Xu, K.
ThP-GR-7
xu, k.
TuP-GR-5
Xu, M.
MoP-ED-13
Xu, P.
ThP-OD-22
Xu, R.
TuP-CH-1
Xu, S.
CH9-5
Xu, S.
ED8-3

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Xu, S.
Xu, S.
Xu, S.
Xu, S.
Xu, S.
Xu, W.
Xu, W.
Xu, W. z.
Xu, W. z.
Xu, W. z.
Xu, W. z.
Xu, W. z.
xu, X.
xu, y.
Xu, Z.
Xu, Z.
Xu, Z.
Xu, Z.
Xue, H.
Xue, J.
xue, j.
Xue, J.

LN1-7
MoP-ED-4
MoP-GR-5
ThP-GR-3
TuP-CH-LN2
JT3-4
MoP-OD-16
ED1-4
ED14-2
ED14-4
ED3-2
ED7-4
TuP-ED-LN1
TuP-GR-5
CH4-3
ED4-6
OD9-1
ThP-OD-23
ThP-OD-9
MoP-GR-17
ThP-ED-24
ThP-GR-23― Y ―Yabutani, A.
MoP-GR-9
Yacgi, H.
OD10-3
Yadav, P.
ED6-3
Yadav, P.
ED6-5
Yadav, P.
MoP-ED-35
Yagi, S.
MoP-CH-21
Yagi, Y.
TuP-CH-10
Yaguchi, H.
OD1-4
Yaguchi, H.
OD6-2
Yaguchi, H.
TuP-OD-15
Yahara, D.
GR5-1
Yahara, D.
TuP-GR-29
Yamada, A.
ED6-1
Yamada, A.
GR18-4
Yamada, C.
GR11-4
Yamada, H.
GR6-3
Yamada, H.
TuP-GR-20
Yamada, J.
ThP-GR-32
Yamada, J.
ThP-OD-12
Yamada, M.
OD6-4
Yamada, R.
GR6-2
Yamada, R.
GR6-6
Yamada, R.
MoP-GR-9
Yamada, R.
OD5-4
Yamada, S.
CH6-7
Yamada, S.
ED12-3
Yamada, S.
MoP-GR-47
Yamada, T.
GR6-3
Yamada, Y.
CH13-6
Yamada, Y.
CH17-6
Yamada, Y.
CH9-3
Yamada, Y.
GR17-5
Yamada, Y.
MoP-CH-8
Yamada, Y.
ThP-GR-24
Yamada, Y.
TuP-CH-3
Yamada, Y.
TuP-ED-5
Yamada, Y.
TuP-GR-15

Yamada, Y.
TuP-GR-25
Yamada, Y.
TuP-GR-37
Yamagata, S. TuP-ED-LN5
Yamaguchi, A. A.
CH3-4
Yamaguchi, T. MoP-ED-21
Yamaguchi, T. ThP-OD-12
Yamaguchi, T. TuP-GR-14
Yamaguchi, T. TuP-GR-38
Yamaguchi, T. TuP-GR-38
Yamaji, A.
ThP-GR-43
Yamamoto, A. TuP-ED-16
Yamamoto, R.
GR18-4
Yamamoto, T.
GR6-6
Yamanaka, M. ThP-GR-15
Yamanaka, Y.
GR5-7
Yamanaka, Y.
JT1-3
Yamanaka, Y.
OD7-5
Yamanaka, Y.
ThP-GR-31
Yamanaka, Y. ThP-OD-10
Yamanaka, Y. ThP-OD-20
Yamaoka, Y.
ThP-GR-15
Yamashita, F.
OD15-5
Yamashita, Y.
GR5-3
Yamasue, K.
ThP-CH-22
Yan, j.
GR6-5
Yan, J.
JT2-5
Yan, J.
ThP-ED-18
Yan, J.
TuP-GR-4
Yan, J.
TuP-OD-11
Yan, J.
TuP-OD-17
Yan, L.
OD2-1
Yan, Q.
ThP-GR-1
Yanagawa, M. MoP-GR-21
Yang, C.
GR14-4
Yang, C.
OD11-2
Yang, D.
GR7-5
Yang, H.
MoP-ED-10
Yang, H.
MoP-ED-28
Yang, H.
MoP-ED-4
Yang, H.
MoP-GR-16
Yang, H.
MoP-GR-4
YANG, H.
OD10-6
Yang, H.
OD12-2
Yang, H.
ThP-CH-27
Yang, H.
ThP-CH-30
Yang, H.
ThP-OD-16
Yang, H.
ThP-OD-26
Yang, H.
TuP-ED-34
Yang, H.
TuP-GR-32
Yang, J.
ThP-ED-32
Yang, J.
ThP-ED-34
Yang, L.
CH4-5
Yang, L.
ED11-3
Yang, L.
ED3-6
Yang, L.
MoP-ED-22
Yang, L.
TuP-ED-2
Yang, Q.
JT3-4
Yang, S.
GR13-1
Yang, S.
GR14-4
Yang, S.
JT2-1
207

Yang, S.
OD11-2
Yang, S.
TuP-GR-16
Yang, T.
CH1-4
Yang, T.
JT2-1
Yang, T.
MoP-OD-17
Yang, T.
OD3-2
Yang, T.
ThP-OD-8
Yang, W.
MoP-OD-25
Yang, X.
MoP-ED-10
Yang, X.
ThP-CH-27
Yang, X.
ThP-GR-19
Yang, X.
ThP-GR-6
Yang, Y.
ED12-6
Yang, Y. H.
GR2-1
Yang, Z.
MoP-GR-35
Yao, J.
MoP-GR-17
yao, j.
ThP-ED-24
Yao, J.
ThP-GR-23
Yao, W.
TuP-GR-16
Yao, Y.
CH17-3
Yao, Y.
CH8-4
Yao, Y.
LN1-7
Yarali, M.
ED15-1
Yashima, H.
ThP-ED-25
Yassine, A.
ED13-1
Yassine, A.
MoP-ED-33
Yassine, M.
CH2-4
Yassine, M.
ED13-1
Yassine, M.
ThP-GR-8
Yasuda, N.
CH14-4
Yasunaga, H.
OD10-7
Yatabe, Z.
TuP-ED-18
Yates, L.
ED4-3
Yates, L.
GR17-3
Yayama, T.
MoP-CH-32
Yazawa, K.
ED15-2Ye, d. J.
TuP-ED-7
Ye, H.
GR13-7Ye, H.
MoP-CH-9
Ye, J.
GR7-2
Ye, J.
MoP-OD-16
Yeh, P.
MoP-ED-31
Yeh, P.
MoP-ED-7
Yeh, P.
ThP-ED-2
Yen, Z.
TuP-ED-27
Yeo, H.
MoP-CH-LN1
Yeo, H.
TuP-GR-LN2
Yeom, M.
ThP-ED-21
Yi, J.
MoP-CH-4
Yi, S.
ThP-OD-15
Yi, X.
ThP-OD-19
Yi, X.
ThP-OD-6
Yim, J.
ED12-6
Yim, J.
MoP-ED-29
Yin, H.
CH7-3
Yin, H.
ED10-4
Yin, H.
ED12-5
Yin, J.
ThP-OD-28
Ying, L.
CH1-4
Ying, L.
JT1-5

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Ying, L.
JT2-1
Ying, L.
OD3-2
Ying, L.
OD3-6
Ying, L.
ThP-OD-8
Yokota, Y.
ThP-GR-43
Yokoyama, M. MoP-GR-41
Yokoyama, T.
CH10-5
Yoo, G.
ThP-ED-21
Yoo, J.
CH4-3
Yoon, J.
TuP-OD-LN2
Yoshida, H.
ED3-5
Yoshida, J.
GR15-3
Yoshida, J.
TuP-GR-1
Yoshida, K.
GR3-2
Yoshida, S.
ThP-CH-6
Yoshigoe, A.
ED5-7
Yoshikawa, A.
CH9-1
Yoshikawa, A. MoP-GR-8
Yoshikawa, A.
OD5-1
Yoshikawa, A. ThP-GR-43
Yoshikawa, A. ThP-OD-24
Yoshimura, H. ThP-CH-21
Yoshimura, K. ThP-GR-32
Yoshimura, M.
GR12-6
Yoshimura, M.
GR2-3
Yoshimura, M. MoP-GR-15
Yoshimura, M. TuP-GR-12
Yoshimura, M. TuP-GR-LN1
Yoshinaga, J.
OD1-2
Yoshinaga, J.
OD6-4
Yoshino, M.
ThP-GR-43
Yoshino, T.
MoP-GR-21
Yoshino, T.
ThP-OD-20
Yoshioka, A.
ED14-3
Yoshioka, A.
ED3-5
Yoshiya, Y.
ThP-ED-15
You, H.
MoP-GR-10
You, H.
MoP-OD-20
You, H.
MoP-OD-22
You, S.
MoP-OD-25
Young, P.
ThP-OD-23
Yu, G.
MoP-OD-LN1
Yu, G.
OD3-5
Yu, G.
ThP-GR-5
Yu, G.
ThP-OD-18
Yu, L.
MoP-GR-LN3
Yu, M. K.
TuP-CH-28
Yu, T.
MoP-GR-35
Yu, T.
MoP-GR-4
Yu, T.
TuP-GR-3
Yu, X.
JT2-5
Yuan, G.
ThP-ED-11
Yuan, J.
ThP-ED-28
Yuan, J.
TuP-ED-33
Yuan, L.
JT1-2
Yuan, M.
ED10-7
Yuan, X.
TuP-ED-6
Yuan, Z.
OD2-1
Yulia, L.
ED13-3
Yuvaraja, S.
TuP-ED-4

Yvon, A.

ThP-CH-19― Z ―Zadura, M.
ED4-2
Zadura, M.
ThP-ED-14
Zaghi, Z.
GR10-3Zagni, N.
CH4-1
Zaiter, A.
GR14-1
Zaiter, A.
LN2-5
Zaiter, A.
MoP-GR-12
Zajac, A. M.
GR12-7
Zajac, M.
ThP-CH-32
Zak, M.
GR12-4
Zameshin, A.
CH8-2
Zanoni, E.
CH4-1
Zanoni, E.
ED14-5Zanoni, E.
ED14-6
Zanoni, E.
ED3-3
Zanoni, E.
OD13-4
Zapol, P.
ThP-GR-20
Zatterin, E.
ThP-CH-10
Zazuli, A.
GR17-5
Zazuli, A.
TuP-ED-5
Zazuli, B. A.
CH17-6
Zazuli, H. A.
TuP-GR-25
Zettler, K. J.
MoP-CH-12
Zettler, T.
MoP-ED-31
Zhan, X.
MoP-ED-4
Zhang , M.
ThP-CH-19
Zhang, R.
ED1-4
Zhang, A.
OD4-6
Zhang, B.
CH1-4
Zhang, B.
JT1-5
Zhang, B.
JT2-1
zhang, b.
MoP-ED-2
zhang, b.
MoP-ED-9
Zhang, B.
MoP-OD-17
Zhang, B.
OD3-2
Zhang, B.
OD3-6
Zhang, B.
ThP-ED-10
Zhang, B.
ThP-OD-8
Zhang, B.
TuP-CH-1
Zhang, C.
OD10-5
Zhang, c. H.
TuP-GR-28
Zhang, F.
ThP-CH-30
Zhang, F.
ThP-OD-16
Zhang, G.
JT1-2
Zhang, G.
MoP-GR-35
Zhang, G.
MoP-OD-2
Zhang, H.
CH7-3
Zhang, H.
GR8-2
Zhang, H.
JT1-2
Zhang, H.
MoP-GR-35
Zhang, H.
MoP-GR-4
Zhang, H.
MoP-OD-2
Zhang, H.
OD10-2
Zhang, H.
ThP-CH-24
Zhang, H.
ThP-ED-30
Zhang, J.
CH9-5
Zhang, J.
ED8-3
Zhang, J.
LN1-7
208

Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
zhang, j.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, J.
Zhang, L.
Zhang, L.
Zhang, L.
Zhang, M.
Zhang, M.
Zhang, M.
Zhang, M.
Zhang, M.
Zhang, M.
Zhang, P.
Zhang, R.
Zhang, R.
Zhang, R.
Zhang, R.
Zhang, R.
Zhang, R.
Zhang, R.
Zhang, R.
Zhang, R.
Zhang, R.
zhang, r.
Zhang, R.
Zhang, R.
Zhang, R.
Zhang, S.
Zhang, S.
Zhang, S.
Zhang, S.
Zhang, T.
Zhang, W.
Zhang, W.
Zhang, W.
Zhang, X.
Zhang, X.
Zhang, X.
Zhang, X.
Zhang, X.
Zhang, X.
Zhang, Y.
Zhang, Y.
Zhang, Y.
Zhang, Y.

MoP-ED-13
MoP-GR-17
MoP-OD-16
MoP-OD-25
MoP-OD-LN3
ThP-ED-24
ThP-ED-28
ThP-ED-9
ThP-ED-LN1
ThP-GR-23
ThP-GR-3
TuP-CH-18
TuP-CH-9
TuP-CH-LN2
TuP-ED-1
TuP-ED-33
TuP-ED-6
TuP-ED-LN3
CH4-4
ED15-4
TuP-OD-16
ED11-3
ThP-GR-10
TuP-CH-18
TuP-CH-9
TuP-ED-1
TuP-ED-6
MoP-ED-22
ED14-2
ED14-4
ED3-2
ED7-4
GR8-3
JT3-4
MoP-GR-10
MoP-OD-16
MoP-OD-20
MoP-OD-22
MoP-OD-4
TuP-ED-7
TuP-OD-11
TuP-OD-9
MoP-GR-1
MoP-OD-12
TuP-ED-28
TuP-OD-8
ThP-GR-3
MoP-ED-13
ThP-ED-9
TuP-ED-LN3
CH14-2
CH14-5
MoP-ED-4
ThP-OD-19
ThP-OD-6
TuP-ED-28
ED12-1
LN1-7
MoP-CH-4
MoP-ED-17

The 14th International Conference on Nitride Semiconductors (ICNS-14)

Zhang, Y.
ThP-ED-18
Zhang, Y.
ThP-ED-19
Zhang, Y.
ThP-ED-33
Zhang, Y.
ThP-OD-19
Zhang, Y.
ThP-OD-6
Zhang, Y.
TuP-CH-LN2
Zhang, Z.
CH1-3
Zhang, Z.
ED16-2
Zhang, Z.
LN1-5
Zhang, Z.
MoP-GR-8
Zhang, Z.
OD10-5
Zhang, Z.
OD11-3
Zhang, Z.
OD5-1
Zhang, Z.
ThP-CH-36
Zhang, Z.
ThP-OD-24
Zhao, C.
OD2-1
Zhao, G.
TuP-GR-16
Zhao, H.
GR7-5
Zhao, M.
GR11-1Zhao, Q.
MoP-GR-4
Zhao, Q.
TuP-GR-3
Zhao, S.
MoP-ED-13
Zhao, S.
TuP-ED-LN3
Zhao, T.
ThP-ED-19
Zhao, X.
OD14-3Zhao, Y.
MoP-ED-3
Zheng, d. Y.
ED7-4
Zheng, d. Y.
TuP-ED-7
Zheng, R.
ED3-7
Zheng, S.
MoP-CH-4
Zheng, X.
MoP-ED-3
Zheng, X.
OD13-5
Zheng, X.
ThP-ED-30
Zheng, X.
TuP-CH-27
Zheng, X.
TuP-ED-31
Zheng, Y.
ED12-5
Zheng, Y.
ED3-7
Zheng, Y.
ED9-4
Zheng, Y.
GR8-3
Zheng, Y.
JT3-4
Zheng, Y.
MoP-GR-10
Zheng, Y.
MoP-OD-20
Zheng, Y.
MoP-OD-22
Zheng, Y. d.
ED1-4
Zheng, Y. d.
ED14-2
Zheng, Y. d.
ED14-4
Zheng, Y. d.
ED3-2
Zheng, Z.
CH1-4
Zheng, Z.
CH4-4
Zheng, Z.
CH4-7
Zheng, Z.
ED11-4
Zheng, Z.
ED15-4
Zheng, Z.
ED16-4
Zheng, Z.
MoP-OD-17
Zheng, Z.
ThP-ED-5
Zheng, Z.
ThP-OD-8
Zhigadlo, D. N. TuP-CH-21
zhizhong, c.
OD8-4
zhizhong, c.
TuP-GR-19
Zhong, Y.
MoP-ED-28

Zhong, Y.
TuP-ED-34
Zhong, Y.
TuP-GR-32
Zhou, B.
ThP-OD-19
Zhou, B.
ThP-OD-6
Zhou, D.
ED1-4
Zhou, D.
ED14-2
Zhou, D.
ED14-4Zhou, D.
ED3-2
Zhou, D.
ED7-4
Zhou, D.
JT3-4
Zhou, D.
MoP-OD-16
Zhou, F.
ED1-4
Zhou, F.
ED14-2
Zhou, F.
ED14-4Zhou, F.
ED3-2
Zhou, F.
ED7-4
Zhou, F.
JT3-4
Zhou, H.
ED3-7
Zhou, H.
ThP-ED-9
Zhou, h.
ThP-ED-LN1
Zhou, J.
ED8-3
Zhou, T. Y.
ED14-2
Zhou, W.
OD12-2
Zhou, X.
ThP-OD-19
Zhou, X.
ThP-OD-6
zhou, y.
MoP-ED-2
Zhou, Y.
MoP-ED-4
Zhou, Y.
MoP-ED-6
zhou, y.
MoP-ED-9
Zhou, Y.
MoP-GR-16
Zhou, Y.
ThP-ED-10
Zhou, Y.
ThP-ED-10
Zhou, Y.
ThP-ED-33
Zhou, Y.
ThP-ED-8
Zhou, Y.
TuP-ED-1
Zhou, Y.
TuP-ED-34
Zhou, y. T.
ED7-4Zhu, B.
TuP-CH-33
Zhu, J.
CH9-5
Zhu, J.
JT1-2
Zhu, J.
LN1-7
zhu, j.
MoP-ED-2
Zhu, J.
MoP-ED-22
zhu, j.
MoP-ED-9
Zhu, J.
ThP-ED-10
Zhu, J.
ThP-ED-33
Zhu, J.
ThP-ED-8
Zhu, J.
TuP-CH-LN2
Zhu, S.
CH16-2Zhu, T.
CH14-2Zhu, T.
TuP-ED-31
Zhu, T.
TuP-ED-9
Zhu, T. g.
ED1-4
Zhu, X.
TuP-GR-3
Zhu, Y.
ThP-GR-11
Zhu, Y.
ThP-GR-9
zhuang, z.
MoP-OD-4
Zhuang, Z.
TuP-OD-9
Zimmermann, F.
MoP-GR-33
209

ZIOUCHE, K.
ED7-2
Złotnik, S.
CH5-7
Zou, X.
CH14-5
Zou, X.
CH4-2
Zscherp, F. M.
ED16-1
Zscherp, F. M.
GR11-2Zscherp, F. M. TuP-GR-39
Zubialevich, V.
GR6-4
Zubialevich, Z. V.
GR1-2
Zubialevich, Z. V. GR16-5
Zubialevich, Z. V.
MoP-OD-15
Zubialevich, Z. V. OD13-6
Zuniga Perez, J. ThP-CH-10
Zuniga-Perez, J.
JT1-1
Zuniga-Perez, J.
OD10-2
Zuniga-Perez, J.
OD10-5
Zuniga-Perez, J.
OD16-1
Zuniga-Perez, J. ThP-CH-1
zuojian, p.
OD8-4
zuojian, p.
TuP-GR-19
Zweipfennig, T. ThP-ED-16
Zweipfennig, T. ThP-ED-3
Zweipfennig, T. TuP-ED-23
Zytkiewicz, R. Z.ThP-GR-26
Zytkiewicz, R. Z.ThP-GR-27

Location of Presentations and Exhibitions

Session Rooms

1F, Hilton Fukuoka Sea Hawk
WC

Bus stop

Bus for excursion

Navis A
Navis B
Navis C

Argos F
Argos E
Argos D
(Argos C)

EV
EV
EV

(Argos B)

EV(Argos A)

Escalators
Entrance

EXHIBITION AREA

POSTER AREA

213

Arrangement of Posters

214

Arrangement of Special Exhibitions

Arrangement of Exhibitions
Booth37
38 35
39
40 36

29

25

15

11

1

33 30

26 22

19 16

12 8

5

2

31

27 23

20 17

13

9

6

3

34 32

28 24

21 18

14 10

7

4

Special Exhibition
HexaTech, Inc.

SpecialBooth1www.hexatechinc.com

HexaTech is an industry-leading manufacturer of single crystal aluminum
nitride (AlN) substrates. This substrate material is enabling long life UV-C lightemitting diodes (LEDs) for disinfection applications, deep UV lasers forbiological threat detection, high voltage switching devices for efficient power
conversion, and RF components for satellite communications.

Malvern Panalytical Ltd.

SpecialBooth2

https://www.malvernpanalytical.
com/en/Malvern Panalytical's dedicated X-ray diffraction systems provide absolute,calibration-free, and accurate information on crystal growth, giving material
composition, film thickness, grading profile, and phase and crystal quality. The
instruments perform host-controlled wafer analysis, using the SECS/GEM
protocols while retaining flexibility to perform applications across the board.

STR Japan K.K.

SpecialBooth
3www.str-soft.com

STR provides specialized commercial software, charged calculation and consulting
services for modeling of crystal growth in bulk growth, epitaxy and semiconductor
devices. Comprehensive research is behind every consulting activity and software
product, which enables careful validation of physical models and approaches applied.
STR’s expertise in the crystal growth science and device engineering is presented invariety of publications in the peer-reviewed journals and conference presentations.

216

Exhibition
AIXTRON SE

Booth
1

https://www.aixtron.com/en

AIXTRON’s product portfolio includes MOCVD Equipment based on the Planetary
Reactor® or Close Coupled Showerhead® concept for compound semiconductormaterials, high-temperature CVD batch systems for SiC applications, and MOCVD,
CVD for the deposition of carbon-nanotubes and other 2D nanomaterials.
CHINO CORPORATION

Booth
2

https://www.chino.co.jp/

Radiation thermometers with video scope, temperature controllers for pipes,
temperature sensors, etc.

LayTec AG

Booth
3

www.laytec.de

LayTec is a major provider of in-situ and in-line optical metrology for thin-film processes. These metrology tools are used in a broad range ofthin-film applications such as LED & LASER production, thin-film photovoltaics, oxide and organic deposition as well as other large area
deposition processes. LayTec’s integrated metrology provides access to all key thin-film parameters in real-time – either in-situ, during thedeposition process, or in-line. Recently, also in-situ metrology tools for wet and dry etching have been added expanding LayTec’s portfolio along
the production chain. Beyond these integrated methods, LayTec also offers mapping solutions which ideally complement in-situ measurements
by providing uniformity analysis of the deposited layers. The implementation of LayTec metrology systems in production processes significantly
shortens development cycles and enables an efficient quality control that helps to considerably reduce production and development costs

Ceramicforum Co., Ltd

Booth
4

http://www.ceramicforum.co.jp/

Bulk and Epi: GaN (on GaN, Si, SA, SiC) and SiC (on SiC) || LED/VCSEL/HEMT/Power
structures || Device processing services || Laytec: Epi in-situ measurement and mapper
systems || DLTS and Hall effect measurement service || Crystal evaluation equipment ||KOH etching machines || Grinding/polishing, edge grinding machines

Kyodo International Inc.

Booth
5

https://www.kyodo-inc.co.jp/electronics/waferprocess/data/thinfilm-powericelectrode.html

Processing services for R&D of GaN, etcProcessing services for R&D of VCSEL andpower devices.ScAlN sputtering service for R&D.Nanoimprint Lithography Total
Solution: from mold to imprint services. Nanowire prototyping service for UV lasers.
Realizing Nano-Micro Order Structures: Nanoimprint Solution TEX Series.

217

MATSUDA SANGYO CO., LTD

Booth
6
Precious metal deposition materials, plating solutions

https://www.matsudasangyo.co.jp/ja/index.html

EpiQuest,Inc.

Booth
7

https://www.epiquest.co.jp/

MOCVD, HVPE, MBE, KOH-Etching System

R-DEC Co., Ltd.

Booth
8

https://g.rdec.co.jp/e/

We R-DEC provide self-developed vacuum equipment as well as sell domestic andoverseas leading suppliers' products as a distributor. We are exhibiting Veeco MBE
components (Plasma Source for Nitrogen and SUMO Cell), in-situ metrology systems forthin-film from k-Space, RHEED, and a vacuum pumping system.

Tokyo Instruments, Inc.

Booth
9

https://www.tokyoinst.co.jp/products/list_
function/cathode_luminescence.html

Tokyo Instruments is an authorized representative of Attolight, manufacturer of the only
quantitative cathodoluminescence (CL) systems that deliver superior performance, maximum
ease-of-use. Attolight firmly believes in the potential of CL and aims at establishing thetechnology as a standard in-line inspection method in semiconductor industry.

ATTOLIGHT AG

Booth
10

www.attolight.com

Attolight AG is an emerging leader in defect inspection for advanced semiconductor materials anddevices. Attolight's core expertise lies in the applications of quantitative Cathodoluminescence (qCL),
advanced data analysis, and design & production of integrated CL tools. CL is a non-destructive
characterization method that produces spectroscopic data at the nanoscale and provides a deeper
understanding of the structure of materials.

218

Bruker Japan K.K.

Booth
11

https://www.brukernano.jp/20190403150156
Bruker XRD system is the long-established and well-proven QC system forepilayers. It is a high-resolution X-ray diffraction tool that is ideal for quality control.
It is used for the measurement of composition and thickness in epitaxial layers ofalmost any material.
Furuya metal co.,LTD.

Booth
12
Ir and Pt crucible. Thermocouple. Sputtering target.

https://www.furuyametals.
co.jp/english/

Orbray Co., Ltd.

Booth
13

https://orbray.com/

Contract processing (GaN wafer 、 AlN wafer), Ceramic wafer (SiC, AlN) , and
NAPHIA series

Japan Laser Corporation

Booth
14

https://www.japanlaser.co.jp/
en/
We will introduce our high-quality photonic components and equipment for a wide
range of scientific applications, including Picosecond Pulsed Lasers and LEDs,
products for Photon Counting and Timing, Fluorescence Spectrometers, andFluorescence Microscopes
Beijing SinoGaN Semiconductor
Technology Co., Ltd.

Booth
15

www.sino-gan.com

SinoGaN is a high-tech enterprise specializing in the R & D, production and serviceof nitride wide band gap semiconductor materials and chips.

219

Seiken Co., Ltd.

Booth
16

https://www.seiken.co.jp/

SEMICONDUCTOR CARRIER ANALYZER

Jiangsu Institute of Advanced
Semiconductors Ltd.

Booth
17

www.iasemi.cn

Jiangsu Institute of Advanced Semiconductors Ltd. (IASEMI) is a new research institution registered in Suzhou
Industrial Park in July 2019. With the goal of fostering and developing the advanced semiconductor technology
application industry, the Institute aims to establish an innovation platform covering the whole industry chain andsystem of the advanced semiconductor to realize the sustainable supply and supporting capacity of technology,
talents, achievements and other resources.

Ion Technology Center Co.,Ltd

Booth
18

https://www.iontc.co.jp

The Ion Technology Center provides materials and failure analysis, and semiconductor
processing services such as ion implantation, annealing, and deposition.
As we havesufficient experience on compound semiconductors GaN, etc., we can support R&D and quality
improvement.
We will propose the best method including consultation about our services.

TOSOH CORPORATION

Booth
19

https://www.tosoh.co.jp/product/?category=functionality

Tosoh Corporation is one of the international suppliers of sputtering targets. We
have recently developed a high-purity GaN sputtering target, and will be exhibiting
our GaN target and deposition products. Sputter epitaxy has great potential for low
cost and high productivity of GaN devices.
NTT Advanced Technology
Corporation

Booth
20

https://www.ntt-at.com/

NTT-AT provides GaN epitaxial wafers for power and RF HEMT devices and related
products including GaN HEMT processed wafers, GaN power HEMT chips, and GaN
HEMT applied devices such as USB PD charger, LED power supply, UVC
sterilization box, and so on.

220Semilab Japan K.K.

Booth
21

https://www.semilab-j.jp/

Hall Measurement, Deep Level Transient Spectrometer, Ellipsometer

Light Conversion

Booth
22

https://lightcon.com/

LIGHT CONVERSION designs and manufactures femtosecond lasers, wavelength-tunable sources(OPAs), optical parametric chirped-pulse amplifiers (OPCPAs), microscopy sources, andspectroscopy systems for industrial, scientific, and medical applications. LIGHT CONVERSION
provides unique solutions for today’s most challenging ultrafast laser technology and application
problems.

Toho Koki Seisakusyo Co.,
Ltd.

Booth
23

http://www.tohokoki.jp

CARE-TEC, AlN Template

OS TECH CO., LTD.

Booth
24

https://www.ostech.co.jp

Electronic Materials Supporting Power Devices & 5G（SiC Wafer, AlN Template）

Sunric Co., Ltd.

Booth
25

https://www.sunric.com

Rare metal processed products such as Molybdenum, Tantalum Tungsten andothers.

221

HORIBA STEC, Co., Ltd.

Booth
26

https://www.horiba.com/jpn/semiconductor/aboutus/corporate-profile/company-introduction/

Although renowned in the semiconductor market, due to our comprehensive
knowledge, we are able to complement a wide variety of industries, applications andmarkets needing gas or liquid mass flow control, gas or chemical monitoring andanalysis of processes.
Suzhou Nanowin Science a
Technology CO. , Ltd.

Booth
27

www.nanowin.com.cn

Suzhou Nanowin Science and Technology Co., Ltd founded in Suzhou Industry Park, China in 2007, is a high-tech company
devoting to fabricate high-quality Gallium Nitride substrates and develop the related technologies. Nanowin’s key advantage
is unrivaled materials expertise owning essential patents in GaN substrates and growth technologies. Nanowin offers standard
and customized free-standing GaN substrates and thick GaN/sapphire templates with extra low dislocation densities which
are suitable for applications in high-power LED, blue LD and high-power electric device. Our strategic goal is to become aleading nitride semiconductor material provider and a pioneer in the industry applications of nitride semiconductors.

NIKON SOLUTIONS Co., Ltd.

Booth
28

https://www.microscope.healthcare.nikon.com/
ja_JP/products/multiphoton-microscopes/axrmp

Multi Photon Microscope System

Oxford Instruments

Booth
29

https://plasma.oxinst.com/

Oxford Instruments Plasma Technology offers flexible, configurable process tools and leading-edge processes for precise andcontrollable etch, deposition and growth. These solutions are based on core technologies in plasma-enhanced deposition andetch, ion-beam deposition and etch, atomic layer deposition and etch, deep silicon etch and physical vapour deposition. Ourinnovative processes specifically address the needs of power electronics and RF applications, offering optimised ALE,
interface preparation, and ALD solutions for GaN and AlGaN layers, including high rate + ALE for GaN HEMT and ALE recessetch + ALD for GaN MISHEMT.

SPP Technologies Co., Ltd.

Booth
30

https://www.spptechnologies.co.jp/

Products of SPP Technologies Co., Ltd.: Plasma process equipment of etching anddeposition for the compound materials; Si Nitride, Gallium Nitride, Silicon Carbide, etc. SPP
Technologies develops, manufactures, imports, sells, and maintains equipment for thevolume production and R&D of MEMS devices and Semiconductor devices.

222

Enkris Semiconductor, Inc.

Booth
31

http://en.enkris.com/

Enkris is dedicated to developing and producing high-quality GaN epitaxial materials
for the applications like power electronics, micro-displays, etc. Enkris is also the only
supplier globally which is able to provide 300mm GaN epi-wafers. This represents
Enkris’ leading position in the GaN industry internationally.
Samco Inc.

Booth
32

https://www.samco.co.jp/en/

ICP Etch, Si DRIE, ALD, PECVD, Aqua Plasma®, UV-ozone Cleaners.

Sanoh Industrial Co., Ltd.

Booth
33

https://www.sanoh.com/ja/

Introduction to Sanoh’s Gallium Nitride (GaN) Semiconductor Substrate Processing Service

TAIYO NIPPON SANSOCORPORATION

Booth
34

https://www.mocvd.jp/en/

MOCVD Systems for GaN, Ga2O3, GaAs/InP

Meiwafosis Co., Ltd.

Booth
35

https://to.meiwanet.co.jp/l/990542/2023-06-20/3zxfn2
Multi-Wavelength Ellipsometer (FS-1), DIAMOND WIRE SAW (DWS 3500P)

223

TOMOE SHOKAI CO, LTD.

Booth
36

http://www.tomoeshokai.co.jp/
about_j/overview/

MO precursors

ROHM CO., LTD.

Booth
37

https://www.rohm.co.jp/

EcoGaN (TM) : 150V/650V GaN (Gallium Nitride) HEMTs, Gate driver for GaN
devices, Controllers for GaN devices

EtaMax Co., LTD.

Booth
38,39

http://etamax.kr/

EtaMax was established in 2008 starting with the development and production of PLATO, automatic photoluminescence (PL) mapping
system that evaluates epi-wafers for LEDs. Since then, EtaMax has been developing optical metrology instruments not only throughLEDs but also throughout the power device and VCSEL production processes. In particular, PLATO occupies a dominant position in
the PL mapping system market worldwide and has contributed to the development of the semiconductor industry by providing the best
measurement solution to users through the know-how accumulated by supplying more than 10 countries around the world. EtaMax
continues to invest more than 20% of sales in R&D to grow into the best company in optical measurement.

Suzhou HanHua
Semiconductor Co.,Ltd

Booth
40

cloud.hanhuasemi.com

Hanhua Semiconductor is a leading semiconductor wafer and chip supplier located in the Suzhou lndustrial Park（SIP）.Founded in 2017，thecompany has established a state-of-the-art semiconductor facility over 20000 ㎡ in size，a 5000 ㎡ class 100/1000 clean room，20 MOCVDs，and 6-8 inch chip line for the mass production of MEMS and optoelectronics. HanHua offers a comprehensive GaN-on-Sapphire and GaN-onSi epi-wafer products for HEMTs, LEDs and other advanced structures. In addition, HanHua offers RGB mini-micro LED chip products, as well
as MEMS-based semiconductor microfluid chip products that utilize our unique 3DIC hybrid bonding technology. HanHua has been certified to
ISO 9001 since 2019.HanHua’s epi wafer and chip products now have been serving Several hundred customers across Asia, North America,
and Europe.

224

Advertisements

227

228

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231

232

233

234

235

Ceramicforum Co., Ltd

Empowering Innovation with Wide Bandgap Technology■ GaN / SiC substrates and Epi Services

Unipress, Eta Research, Nanowin, SiCrystal, NovelCrystal, Enkris Semiconductor, SweGaN, etc.
- GaN (ammonothermal, HVPE), SiC, Ga2O3
substrates- GaN-on-Si / SA / SiC / GaN epi for(micro)LED/Power/RF- QuanFINE™ GaN-on-SiC- Device processing services

QuanFINE

TM

Thinner, Colder, Faster■ DLTS/Hall Eﬀect Measurement System measurement services
Phystech (Germany), Ceramicforum

SiC DLTS Spectrum

GaAs PITS Spectrum- Advanced DLTS system with high-sensitivity
analytics.
- Features multiple modes: Photo DLTS, Laplace,and more.
- Measures activation energy, trap density,
depth proﬁle, etc. with 0.01fF sensitivity.
- Also oﬀering DLTS & Hall eﬀect measurements at our domestic lab■ CS2: Rapid/Non-destructive Diagnostics for Crystalline Quality
Ceramicforum

ドープ濃度分布（光学吸収係数:αを表示）

Quick diagnosis of the entire wafer to detect abnormalities within
the crystal.
→ Doping concentration distribution→ Residual strain distribution→ Defect classiﬁcation

残留歪マップFast and fully automatic diagnosis→ 90 sec per φ6” wafer→ Diagnostic report output■ In-situ metrology and wafer mapper systems
Laytec (Germany)

LayTec AG's in-situ monitoring system.
- measures ﬁlm deposition speed, thickness, wafer
temperature, and warpage in real-time.
- Compatible with nano-scale structures.
- Crucial for GaN deposition due to wafer surface
temperature importance.
- Achieves temperature accuracy of ±1K.
- Diverse measurement capabilities.
- Supports multi-wafer susceptors for selective
measurements.
NEW: EpiX- C2C wafer mapping metrology system

Ceramicforum Co., Ltd

3-19-6, Kanda, Nishiki-cho, Chiyoda-ku, Tokyo
101-0054 Japan
Tel +81-3-5577-2947
semi@ceramicforum.co.jp

www.ceramicforum.co.jp

236

237

booth No.

ブース番号 24

Materials

Supporting Power Devices
SiC Single Crystal Wafer and Epitaxial Wafer
SiC N-type 6-inch & 8-inch wafers and epitaxial wafer for powerdevices are available.

GaN Single Crystal Wafer
We sell GaN 2-inch/4-inch wafers
for power devices.
We also supply MONCD AlGaN on
Sapphire and HVPE MONCD AlGaNon Sapphire.

Al-Sc sputtering target
Radio frequency (RF) ﬁlters operating in the 800 to 2500
MHz band are used in mobile communication terminals.
SAW ﬁlters, which utilize surface acoustic waves (SAW)
propagating on the surface of piezoelectric substrates, arewidely used for these RF ﬁlters.

Please contact us for compound semiconductor raw materials, various
ceramics (AlN, BN, SiC, Si3N4, Al2O3, ZrO2, etc.), various sputteringtargets, high-purity metals, and special rare metals.

5-2-27, Minami-mikunigaoka, Sakai-ku,
Sakai, Osaka, JAPAN 590-0023
TEL : +81-72-221-2778 FAX : +81-72-221-2779

238

URL : http://www.ostech.co.jp
email : material_info@ostech.co.jp

Gallium nitride
epitaxial wafers, devices
Powdec provides GaN epitaxial wafers by using uniquely designed
face-down MOCVD (metal organic chemical vapor deposition)equipment. Taking advantage of the characteristics of gallium
nitride, we also develop and manufacture novel high-efficiency,
high-voltage devices: polarization super-junction (psj)-GaN, lightemitting devices, μ-LED, and sensors.
High-voltage GaN
transistor
Template for m-LED

High-voltage GaN
diode

GaN
for Green Future

Ultraviolet Sensors

AlN-template for UVLEDGaN AlGaN-template

Anticipated application of psj-GaN power semiconductors

URL : http://www.powdec.co.jp/,239

E-mail : info@powdec.co.jp

240

High-Resolution Measurement of
Nitride Semiconductor Materials
By XRD Equipped With “HyRES” Unit
AUTOMATED MULTIPURPOSE
X-RAY DIFFRACTOMETER

SmartLab

Multiple Measurements / Analysis Applications
・Film Thickness and composition measurement by HR rocking curve
・Crystal quality and curvature analysis by Rocking Curve
・Texture analysis by high-speed pole figure by 2D detector
・Mapping analysis
・Lattice strain/relaxation evaluation by fast Reciprocal Space Map
・Automatic measurement with macro function from crystal orientation alignment to the measurement

HyRES 220,400

High-resolution rocking curve with analyzer
path to reduce the effect of the curvature

Slit⇔Analyzer crystal Switching unit

Meas. data:wo_analyzer_(PB1mm)f
Meas. data:w_analyzer_(PB1mm_RS2mm)

1.00e+008

Intensity (cps)1.00e+006

HyRES 220

Without analyzer
1.00e+004

Hybrid pixel array 2D Detector

HyPix-3000,-400

1.00e+002

With analyzer
33

34

35

2-theta (deg)Fast RSM with slit path

Ultra high-resolution RSM
with analyzer path
[ JAPAN ]Rigaku Corporation

Head Office, Tokyo Plant,[ U.S.A.]
Rigaku Americas Corporation

3-9-12, Matsubara-cho, Akishima-shi,

Texas 77381-5209, U.S.A.

9009 New Trails Drive, The Woodlands,

X-ray Research Laboratory
Tokyo 196-8666, Japan

Tel. 81-42-545-8111 Fax. 81-42-544-9795

241

36

SEMICONDUCTORCARRIER ANALYZER
半導体キャリア濃度アナライザー

No metal pads

金属電極を使用せずに
Our technology enables ohmic
contact
ona
WBG
semiconductor wafer (SiC,
GaN, etc.) without metal
contact pads. *Patent pending
ワイドバ ンド ギャップ (WBG)半導体(SiC、GaN等)とのオーミック接触が可能。※特許出願申請中

Two in one step
2つの測定を同時にConduct four-probe and Hallmeasurement in one step,obtaining sheet resistance,
carrier concentrations, andmobility.
4端子測定とホール測定を同時に行い、シート抵抗、キャリア濃度、移動度を測定可能。

お気軽にお問い合わせください:Japan

Use an USB interface formeasurement control anddata export.
USB接続により測定条件設定、測定データ取得可能。

Feel free to contact us any time:
USA, EU

Seiken Co., Ltd 株式会社精研

d-yokota@seiken.co.jp
www.seiken.co.jp

USB interface
USB接続

Contact form

242

SixPoint Materials, Inc.
tadao@spmaterials.com
www.spmaterials.com Web Page URL

243

244

245

Site Map

Date

8:00

Room

foyer

Nov. 12 (Sun)
Argos

Argos
A-C
Argos D

Argos E

Nov. 13 (Mon)
Argos F

Opening

Navis A

CH1

CH2

JT1

Navis COD1Navis B

GR1

Lunch
ED1

Argos
A-C

Exhibition

Poster TuP
Exhibition

Argos D

CH4

Argos E

CH7

CH6

ED3

ED4
Women in
NitridesED5

Argos F

CH5

Navis A

GR4

Navis B

GR5

Navis C

Nov. 14 (Tue)

OD3

GR7

Break
GR6

Argos E

Plenary 7
Closing

Plenary 6

Plenary 5

Plenary 4

GR18

Argos D

LN1

OD4

Lunch

Argos
A-C

Exhibition

OD15

GR17

GR9

OD5

ED14

OD13

GR8

LN2

Light Meal

Navis C

Rump 3

Navis B

Rump 2

Navis A

GR3

Rump 1

Argos F

Nov. 16 (Thu)
Argos E

JT2

Navis C

Argos D

CH3

Navis B

Argos
A-C

OD2

Navis A

GR16

Student Event

ED12

ED10

OD12

CH12

GR13
Break
CH11

CH13

Lunch

OD11

OD10

Banquet

GR15

GR14

CH10

ED13

ED11

GR12

GR2

Argos F

Exhibition

Poster ThP
Exhibition

ED9

ED2

Break
Plenary 2
Plenary 3

9:00

Exhibition

PosterMoP
Exhibition
Exhibition

Argos E

Nov. 15 (Wed)Argos D

JT3

ED7

CH9

CH8

OD9

OD7
Break

Excursion

OD8

OD6

GR11

GR10

ED8

ED6

Registration

Special Plenary 1

Welcomereception

Exhibition

Argos
A-C

10:00
11:00
12:00
13:00
14:00
15:00
16:00
17:00
18:00
19:00
20:00

Date

8:00

Room

9:00
10:00
11:00
12:00
13:00
14:00
15:00
16:00
17:00
18:00
19:00
20:00

Argos F

Navis A

Navis B

ED15

Navis C

Nov. 17 (Fri)

CH15

ED16

CH14

CH17

OD14

CH16

Break

OD16

Lunch