P04SCT4018KE-EVK-001_DPT_HS
ROHM Solution Simulator Schematic Information

Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Getting Started>
Table of Contents• Outlines• Simulation Circuit• Simulation Settings• Component List
• PCB Pattern Parasitic Inductors• Analytical Tools

2022. Sep
65UG040E Rev.001

How to use ROHM Solution Simulator
Please visit ROHM Solution Simulator page(https://www.rohm.com/solution-simulator)• Hands-On User’s Manual Link
• Tutorial Short Videos available© ROHM Co., Ltd.

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P04SCT4018KE-EVK-001_DPT_HS
ROHM Solution Simulator Schematic Information

Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Outlines>

2022. Sep
65UG040E Rev.001

This simulation circuit provides the double pulse test simulation environment of P04SCT4018KEEVK-001, ROHM’s 4th Generation SiC MOSFET Half Bridge Evaluation Board“. The simulation
circuit is composed of the detailed simulation model with the circuit board parasitic inductance toachieve higher switching waveform simulation accuracy.
Features• Double pulse test circuit (High-side switching)• 4th generation SiC MOSFET SCT4018KE + gate driver IC BM61S41RFV-C.
• Device equivalent circuit model of the components are used for simulation accuracy.
• Parasitic inductors of PCB patterns are modelled and applied to the simulation circuit.

Figure 1. P04SCT4018KE-EVK-001• Vgs, VDC, snubber circuit constants, etc. can be modified.
• Approx. simulation elapsed time is 2min30s.
Applications• By simulating and verifying the operating conditions and circuit constants of drive circuits, etc., theworkload of hardware evaluation can be reduced.
• By extracting the parasitic L of the pattern from the PCB layout and adding it to the circuit for
simulation, it is possible to improve the problem before prototyping.
• Simulation with the EVK detailed model may help to analyze the cause of noise surge surges
observed in the hardware evaluation.
Note) For more details of P04SCT4018KE-EVK-001, please refer to the following documents.
4th Generation SiC MOSFET Evaluation Board Product Specifications.pdf
4th Generation SiC MOSFET Evaluation Board User’s Manual.pdf© ROHM Co., Ltd.

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P04SCT4018KE-EVK-001_DPT_HS
ROHM Solution Simulator Schematic Information
2022. Sep
65UG040E Rev.001

Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Simulation Circuit>
P04SCT4018KE-EVK-001 Simulation Model
LP21

Table 1. Parameter Settings
Parameters

Descriptions

Default

VDC

DC Voltage

800 V

HS_VCC2,
LS_VCC2

Gate drive positive
voltage

18 V

HS_VEE,
LS_VEE

Gate drive negative
voltage

0V

Tj
HS_VPULSE

Q51, Q151 Device
Junction Temperature
High-side pulse period
High-side pulse width

LS_VPULSE

LP32

LP22

Simulation
Setting Range
U2

0 to 25 V

LP5

LP1

D53

C66
LP2

LP3
VS1

C51
LP8

LP6
D54
LP7

LP4

C65

i2q1

R55
R56

HS_
VPULSE

0 to 4 V

LP23

R73

Q51

D57

LP9

D58

C64

LP24
LP10

25 °C

LHSVCC2

HS_VCC2
R175

10 μs

HS_VEE

Fixed

C59

C302

R307

C303

R308

R174

LP25
R176 R75LP11

4.9 μs

LP15

C166“L” (DC)

U102

LP12

LS_
VPULSE

R155

LP27
C151

LP16

R173

LP14

LP17

i2q2
LP19

C164

Q151
D158

LS_VEE

VDC

L1

C165
LP28
LP30

LP20
LLSVCC2

R76

D157

LP18

D154

VS2

C301

LP26
D153

R156
LP13

LVD

R74

LS_VCC2

LP29

LP31

ep2q3
ep2q4

R321
C159

Figure 2. Simulation Circuit© ROHM Co., Ltd.

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P04SCT4018KE-EVK-001_DPT_HS
ROHM Solution Simulator Schematic Information

Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Simulation Settings>

2022. Sep
65UG040E Rev.001

How to setup the gate drive pulse
1. Gate drive voltage Vgs
Figure 3 shows a simplified gate driver circuit, and Figure 4
shows an example of the Vgs waveform. The voltage
source VEE gives the voltage of the DS pin of the SiC
MOSFET with respect to the VEE2 voltage of the gate
GDIC
driver IC. The voltage source VCC2 gives the supply
voltage VCC of the gate driver IC with respect to the DS pin
voltage. As a result, the gate voltage Vgs of the SiC
MOSFET is VCC for 'H' voltage and (-VEE) for 'L' voltage.
Set HS_VCC and HS_VEE for the high-side circuit, and
LS_VCC and LS_VEE for the low-side circuit, respectively.

VCC2

SiC
MOSFETGATE+

SiC MOSFET
Gate voltage

Vgs
S

VCC2 = 18V

VEE2+

VCC2=18V

2. Gate Drive Pulse timing
Voltage source ‘HS_VPULSE’ generate the gate drive
pulse timing. The period T = 5μs and the pulse width =2.5μs. The actual gate drive pulse output is at the ‘out’ pinof BM61S41RFV-C, the gate driver IC.

GDIC
VCC2 voltage+

VEE = 2V

Figure 3. Simplified Gate Drive Circuit(common for high-side and low-side)

SiC MOSFET
DS voltage
VEE = 2V

GDIC
GND2 voltage

Figure 4. SiC MOSFET Vgs Voltage© ROHM Co., Ltd.

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P04SCT4018KE-EVK-001_DPT_HS
ROHM Solution Simulator Schematic Information

Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Simulation Settings>

2022. Sep
65UG040E Rev.001

How to set simulation parameters
2. ‘USE_INITIAL_VOLTAGE’ and ‘USE_INITIAL_CURRENT’

1. Using Property Editor
To open the Property Editor, right-click on a component and select"Properties" from the pull-down menu. Figure 5 shows an example of
the Property Editor. You can browse the parameters of thecomponent from the Property Editor.
Components shown in blue have “tunable" parameters, and you canchange the parameters in the white text box in the Property Editor.
Apply the values within the displayed tolerance range.

The capacitor property 'USE_INITIAL_VOLTAGE' and the inductor property'USE_INITIAL_CURRENT' are used to improve the convergence of thesimulation and speed up the simulation. Initial voltage or initial current value will
be applied to the component as the initial condition. It will improve simulation
convergence.
When changing simulation parameters, the initial voltage and the initial current
should be revised.
Table 2 shows the recommendation of the initial voltage and the initial current.
Table 2. Initial Voltage Recommendation(a) Capacitor(b) Inductor

Figure 5. Property Editor Examples

SymbolInitial Voltage
Recommendation

C64, C164(-HS_VEE), (-LS_VEE)

C66, C166(HS_VEE+HS_VCC2),(LS_VEE+LS_VCC2)

C59, C159

HS_VEE, LS_VEE

C65, C165

VDC

C302, C303

(VDC/2)C301

VDC© ROHM Co., Ltd.

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ROHM Solution Simulator Schematic Information
2022. Sep
65UG040E Rev.001

Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Component List>
Table 4. Power Device / Gate Driver IC Component List
SymbolPart Number

DeviceQ51, Q151

SCT4018KE

4G-SiC MOSFET, 1200V, 18mohm

D53, D54,
D153, D154

RB160VAM-60

Schottky Barrier DiodeD57, D58,
D157, D158

RFN1LAM7S

U2, U102

BM61S41RFV-C

Table 6. Resistor Component List
R value[ohm]

TunableR55, R155

3.3✓

R56, R156

0✓

Super Fast Recovery Diode

R73, R173

4.7k

R74, R75, R76,
R174, R175, R176

10

1ch Gate Driver Providing Galvanic Isolation

R307, R308

1M

C Snubber resistors

R321

0.1m

Shunt resistor

Part Number of Q51 and Q151 are selectable from the property editor.
The list of the part number is shown below.
To change the MOSFET, see instruction ‘How to change MOSFET model’or refer to the hands-on manual from the link on Page 1.

Symbol✓Comments
Gate resistors

RCD Snubber resistors

Note) The value is constant unless otherwise specified as ‘Tunable’.

How to change MOSFET Model
Table 5. SiC MOSFET Part Number List
SymbolPart Number

Features

Q51, Q151

SCT4018KE*

1200V, 18mohm

SCT4036KE

1200V, 36mohm

1
2* Default deviceNote) We have not been able to confirm operation with all combinations.
Please read the disclaimer carefully.

3

1. Right-click on the device
2. Select “Properties”
3. Pull down “SpiceLib Part”

4

4. Select the product© ROHM Co., Ltd.

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P04SCT4018KE-EVK-001_DPT_HS
ROHM Solution Simulator Schematic Information
2022. Sep
65UG040E Rev.001

Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Component List>
Table 7. Inductor Component List
Inductor Values

Simulation
Settings

P1

Descriptions

Symbol

L
[H]

PAR_
RES
[ohm]

SER_
RES
[ohm]

PAR_
CAP[F]

TunableUse Initial current= 0 Option

L1

250μ

51k

0.13

2.124p✓✓P2
L

SER_RESPAR_RES
PAR_CAPDPT Inductive Load

Figure 5. Inductor Model

Note) Refer to Figure 5 for the model composition.
Note) The value is constant unless otherwise specified as ‘Tunable’.

Table 8. Capacitor Component List
Capacitor Values
Symbol

C
[F]

ESR
[ohm]

ESL
[H]

Simulation Settings
TunableInitialVoltage[V]

TunableDescriptions

P1

P2
C

Use
InitialVoltage

ESL

ESR

Figure 6. Capacitor Model

C51, C151

0.1μ

19.8m

0.37n

0

C64, C164

0.1μ

19.8m

0.37n

0

✓

✓

C66, C166

0.1μ

19.8m

0.37n

18

✓

✓

C59, C159

4.7μ

3.2m

0.48n

0

✓

✓

C65, C165

33n

12m

0.65n

✓

800

✓

✓

RCD Snubber capacitors

C302, C303

0.47μ

8.4m

0.65n

✓

400

✓

✓

C Snubber capacitors

C301

10μ

9.9m

11n

✓

800

✓

✓
Note) We have not been able to confirm operation with all combinations.
Please read the disclaimer carefully.

Note) Refer to Figure 6 for the model composition.
Note) The value is constant unless otherwise specified as ‘Tunable’.
© ROHM Co., Ltd.

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P04SCT4018KE-EVK-001_DPT_HS
ROHM Solution Simulator Schematic Information
2022. Sep
65UG040E Rev.001

Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<PCB Pattern Parasitic Inductors>
Table 9. EVK PCB Pattern Parasitic Inductor model
Inductor Values

Sim Settings

Symbol

SERL
[nH]

SERR
[mohm]

Tunable

LP1

0.420

5

LP2

6.382

LP3

Inductor Values

Sim Settings

Symbol

SERL
[nH]

SERR
[mohm]

Tunable

✓

LP17

5.220

26

✓

31

✓

LP18

2.525

9

✓

2.900

12

✓

LP19

1.069

5

✓

LP4

1.032

5

✓

LP20

4.022

8

✓

LP5

2.707

7

✓

LP21

5.741

133

✓

LP6

2.583

15

✓

LP22

4.781

165

✓

LP7

4.832

25

✓

LP23

4.967

17

✓

LP8

2.583

10

✓

LP24

0.856

3

✓

Initial Current= 0 Option

LP9

0.936

5

✓

LP25

7.000

28

✓

LP10

5.210

20

✓

LP26

7.000

28

✓

LP11

0.796

4

✓

LP27

1.212

2

✓

LP12

6.390

32

✓

LP28

0.575

7

✓

LP13

5.58

16.5

✓

LP29

1.347

21

✓

LP14

0.981

6

✓

LP30

3.891

66

✓

LP15

2.929

7

✓

LP31

1.287

68

✓

LP16

1.938

9

✓

LP32

0.306

16

✓

Initial Current =0 Option

Note) Refer to Figure 7 for the model composition.
Note) The value is constant unless otherwise specified as ‘Tunable’.
Note) The inductor models are defined from the analysis of the PCB pattern design data and the accuracy is not guaranteed.
Note) We have not been able to confirm operation with all combinations. Please read the disclaimer carefully.

LP1 through LP32 are PCB pattern inductor models.
These are defined from the electro-magnetic analysis of the
PCB pattern layout and applied to the simulation circuit as
discrete components. Figure 7 shous the model equivalentcircuit. The resister of 100 ohm in parallel is for stabilizing
simulation.
You can modify these inductors, for example, referring to thelayout design constraints to relatively evaluate how the patternlayout would affects the switching behaviors.

P1

SERL

P2
SERR

100ohmFigure 7. Parasitic L model© ROHM Co., Ltd.

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P04SCT4018KE-EVK-001_DPT_HS
ROHM Solution Simulator Schematic Information

Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Analytical Tools>

2022. Sep
65UG040E Rev.001

Analytical tools are used in the simulation circuit for current sensing and device loss calculation.
1. Current Sensing Tool
The component ‘Current to Continuous Quantity’ outputs the current
flow ‘p1’ through ‘p2’ (See Figure 8.)
It is used to measure the drain current of the SiC MOSFET.

2. Device Loss Calculation Tool
The component ‘Loss_Calc3’ calculates the voltage difference
between ‘p1’ and ‘p2’, and outputs the products of the voltage
difference and ‘i_sense’ current input as ‘loss_out’ and its integrationas ‘loss_integ_out’ (See Figure 9.)
𝑙𝑜𝑠𝑠_𝑜𝑢𝑡 𝑡 = v 𝑡 × 𝑖_𝑠𝑒𝑛𝑠𝑒 𝑡𝑡𝑙𝑜𝑠𝑠_𝑖𝑛𝑡𝑒𝑔_𝑜𝑢𝑡 𝑡 = න 𝑙𝑜𝑠𝑠_𝑜𝑢𝑡 𝑡 𝑑𝑡
0

* v 𝑡 : voltage difference between p1 and p2

Figure 8. Current to Continuous QuantityNote) The Loss_calc component is a utility module to support power loss calculation,and does not affect the simulation results of circuit operation or performance.

Figure 9. Loss_Calc3© ROHM Co., Ltd.

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NoticeNotes1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
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