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device and, more particularly, to a method for manufacturing an integrated circuit device in which a silicon oxide film is used as a gate insulating film of a MISFET (Metal Insulator Semiconductor Field Effect Transistor). 2. Description of the Prior Art It is known
that, in an integrated circuit device, the ability of a gate insulating film is degraded as the size of a MISFET is reduced. In order to prevent this degradation of the ability of the gate insulating film, the thickness of the gate insulating film is conventionally increased.
This is because the film thickness of the gate insulating film affects the transistor performance, such as threshold voltage, transconductance, etc. When the thickness of a gate insulating film is increased, however, the gate insulating film has a larger surface area and,consequently, an increase in gate capacity. In addition, the thickness of the gate insulating film has a relationship with a gate length of the MISFET and, thereby, if the gate length is increased, the ability of the gate insulating film is degraded. In other words, the gateinsulating film has a limit for reducing the size of the MISFET. It is also known that, even if the size of the MISFET can be reduced, the gate insulating film has a limit for reducing the surface area thereof. This is because the gate insulating film is formed in theshape of a trench in order to reduce the size of the MISFET. However, if the surface area of the gate insulating film is reduced, the electric field applied between the polysilicon gate electrode and the gate insulating film is reduced, and an increase in the gatecapacity would be caused. In other words, the thickness of the gate insulating film and the surface area of the gate insulating film are determined such that the insulating ability of the gate insulating film is not degraded and the gate capacity is not increased. In thisway, the size of the gate insulating film cannot be reduced in the conventional integrated circuit device. Thus, it has been considered that the potential of the channel region in the MISFET must be reduced in order to make it possible to f678ea9f9e
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