J. Inst. Electrostat. Jpn.

, 32, 2 (2008) 84 89

ࠦࡠ࠽᡼㔚ᣇᑼࠗࠝ࠽ࠗࠩ࡯ߦࠃࠆ⓸⚛㔓࿐᳇ਛߩ࠙ࠚ࡯ࡂߩᏪ㔚ߣ㒰㔚ะᎹ᡽ᴦ㧖,1㧘ᄢਭ଻⾆ᐢ㧖㧘ᄢ⼱ ൎ㧖㧘㜞ᧁᶈ৻㧖㧘⮮ේ᳃਽㧖㧘દ⮮ ೰㧖㧖㧔2007 ᐕ 10 ᦬ 22 ᣣฃઃ; 2008 ᐕ 1 ᦬ 9 ᣣฃℂ㧕Electrification and Neutralization of Wafers in Nitrogen Ambient Using
Corona Discharge Ionizer
Seiji MUKAIGAWA,*,1 Takahiro OHKUBO,* Masaru OHTANI,* Koichi TAKAKI,*Tamiya FUJIWARA* and Takeshi ITO**(Received October 22, 2007; Accepted January 9, 2008)

In this article, we investigated the electrification and neutralization of surface charge on silicon wafer(s) in nitrogenambient using a corona discharge ionizer at atmospheric pressure. Measurement of surface potential uniformity, ion
balance, and the time for surface charge neutralization was conducted. A type of AC and DC simultaneous application
was proposed in order to decrease the ion balance (residual surface potential). Using the ACDC type ionizer, ion
balance reduces to 㧙10V㨪㧙20V. And the time for surface charge neutralization in the case of 1kV of positive andnegative charging reduces to 0.8s and 2.0s, respectively.
1.

ߢ߈ࠆ߽ߩߢߥߌࠇ߫ߥࠄߥ޿㧚ߎߩ↪ㅜߦߪ㧘᭴ᚑ߇න⚐ߪߓ߼ߦ㕒㔚᳇ߦࠃߞߡ⊒↢ߔࠆ᡼㔚㧔ESD㧕ߪ㧘㔚᳇࡮㔚ሶ࠺ࡃߢ㧘ࠗࠝࡦࡃ࡜ࡦࠬߩ೙ᓮᕈ߇㜞ߊ㧘㒰㔚ㅦᐲߩ㜞޿ࠗࠝ࠽ࠗࠬ↥ᬺࠍߪߓ߼ߣߔࠆᄙߊߩ↥ᬺߢ㧘㔚ሶᯏེߩ⺋૞േ㧘ࠗࠩ࡯ߩታ⃻߇ᦸ߹ࠇࠆ㧚ࠗࠝࡦࡃ࡜ࡦࠬߩ೙ᓮߦߪࡎࡠ࡯࠺ࡃࠗࠬߩ⎕უ߿㧘Ꮺ㔚ߦࠃࠆࡄ࡯࠹ࠖࠢ࡞ߩઃ⌕ߥߤߩ㔚ᭂࠍ↪޿ࠆᣇᴺ 4) ߿㧘ᄢ᳇࿶ࠣࡠ࡯ࠍ↪޿ࠆᣇᴺ 5)㧘੤ᵹ᭽‫ߥޘ‬㓚ኂࠍᒁ߈⿠ߎߔ㧚ߎࠇࠍ㒐ߋኻ╷ߣߒߡ㧘ࠗࠝ࠽ࠗ㔚࿶ߦ⋥ᵹ㔚࿶ࠍ㊀⇥ߔࠆᣇᴺ 5) ߇޽ࠆ㧚ᧄ⎇ⓥߢߪ㧘㧞ᧄࠩ࡯ࠍ↪޿ߡᏪ㔚ߒߚ‛⾰ࠍ㒰㔚ߔࠆᣇᴺ߇޽ࠆ㧚ඨዉ૕⵾ߩ㊎㔚ᭂ߆ࠄߥࠆࠦࡠ࠽᡼㔚ᣇᑼࠗࠝ࠽ࠗࠩ࡯ࠍ૞ᚑߒ㧘N2ㅧߦ߅޿ߡߪ㧘࠙ࠚ࡯ࡂߩᏪ㔚㒐ᱛ߿㒰㔚ߩߚ߼ߦࠗࠝ࠽ࠗ㔓࿐᳇ਛߢ⋥ᓘǾ300mm ߩࠪ࡝ࠦࡦ࠙ࠚ࡯ࡂߩᏪ㔚ߣ㒰㔚ࠩ࡯߇ዉ౉ߐࠇߡ߅ࠅ㧘ࠢ࡝࡯ࡦ࡞࡯ࡓౝߢߩ࠙ࠚ࡯ࡂߩᏪ

ߩၮ␆․ᕈࠍ᷹ቯߒߚ㧚㒰㔚ᤨߩ㊎㔚ᭂ߳ߩ㔚࿶ශടᣇᑼߣ

㔚࡮㒰㔚ࠍਥߥ⋡⊛ߣߒߡ UV శ1)

߿エ X ✢╬ࠍ↪޿ߚ㕖ߒߡ㧘ਔ㔚ᭂߦᱜ⽶ߘࠇߙࠇߩ⋥ᵹ㔚࿶ࠍශടߔࠆᣇᑼ㧔DC᡼㔚ဳࠗࠝ࠽ࠗࠩ࡯߇↪޿ࠄࠇߡ޿ࠆ㧚ઁᣇ㧘ࠗࠝ࠽ࠗࠩ࡯

ශടᣇᑼ㧕㧘ਔ㔚ᭂߦᱜᒏᵄ੤ᵹ㔚࿶ࠍශടᣇᑼ㧔AC ශടᣇߦߪ㧘ⵝ⟎᭴ᚑߩ◲නߐ߿ขࠅᛒ޿࡮ዉ౉ߩኈᤃߐ߆ࠄ㧘᡼ᑼ㧕㧘ਔ㔚ᭂߦ੤ᵹ࡮⋥ᵹࠍߘࠇߙࠇหᤨߦශടߔࠆᣇᑼ2) 3)

㧚ඨዉ૕⵾ㅧ㧔ACDC หᤨශടᣇᑼ㧕ࠍ↪޿ߚ㧚․ߦ㧘ࠗࠝࡦࡃ࡜ࡦࠬߩߦ߅ߌࠆࡊ࡜࠭ࡑࡊࡠ࠮ࠬߢߪ࠙ࠚ࡯ࡂߩᏪ㔚㔚⩄㊂ߪ㕖೙ᓮᕈߩะ਄ࠍ߼ߑߒߡ㧘ACDC ᣇᑼߦࠃࠆ㒰㔚ࠍⴕ޿㧘㒰Ᏹߦᄙߊ㧘ࡊ࡜࠭ࡑࡊࡠ࠮ࠬ⋥ᓟߩ࠙ࠚ࡯ࡂߩᏪ㔚߇㧘ߘߩ㔚ᓟߩࠗࠝࡦࡃ࡜ࡦࠬߩ࠙ࠚ࡯ࡂ⴫㕙਄ಽᏓ㧘෸߮㒰㔚ᤨ㑆ᓟߩᎿ⒟ߩ ESD ߿ࡄ࡯࠹ࠖࠢ࡞ߩઃ⌕ߥߤߩ໧㗴ࠍᒁ߈⿠ࠍ᷹ቯߒߚ㧚㔚ᣇᑼࠗࠝ࠽ࠗࠩ࡯߇ᐢߊ↪޿ࠄࠇߡ޿ࠆߎߔ㧚ߎߩ㒐ᱛߩߚ߼ߦࡊ࡜࠭ࡑⵝ⟎߳៞タߔࠆࠗࠝ࠽ࠗࠩ

ᧄ⺰ᢥߢߪ㧘ࠦࡠ࠽᡼㔚ᣇᑼࠗࠝ࠽ࠗࠩ࡯ߩ᭴ㅧߣ㔚࿶㔚࡯ߪ㧘⁜޿ⓨ㑆ߦᄙ㊂ߦⓍタߐࠇߚ࠙ࠚ࡯ࡂࠍ⍴ᤨ㑆ߢ㒰㔚ᵹ․ᕈࠍㅀߴߚᓟ㧘ᧄࠗࠝ࠽ࠗࠩ࡯߇↢ᚑߔࠆ㔚⩄ߩ࠙ࠚ࡯ࠠ࡯ࡢ࡯࠼㧦㒰㔚㧘ࠦࡠ࠽᡼㔚㧘ࠗࠝ࠽ࠗࠩ࡯㧘㒰㔚ᤨ㑆* ጤᚻᄢቇᎿቇㇱ㧔0208551 ጤᚻ⋵⋓ጟᏒ਄↰ 435㧕
Department of Electrical and Electronic Engineering, Iwate
University, 435 Ueda, Morioka, Iwate 0208551, Japan** ᣣ┙࿖㓙㔚᳇㧔9392393 ንጊ⋵ንጊᏒ౎የ↸଻ౝ 21㧕Hitachi Kokusai Electric, 21, Yasuuchi, Yatsuo-machi,Toyama-shi, Toyama 9392393, Japan1
mukaigaw@iwate-u.ac.jpࡂ㕙਄ಽᏓߩဋ৻ᕈࠍ␜ߔ㧚ᰴߦ㧘DC ශടᣇᑼߣ AC ශടᣇᑼߩᏪ㔚․ᕈࠍ␜ߒ㧘․ߦ㧘AC ශടᣇᑼߢߪ࠙ࠚ࡯ࡂߪ⽶ߦᏪ㔚ߔࠆߎߣࠍ␜ߔ㧚ߎߩ⚿ᨐࠍฃߌߡ㧘ACDC หᤨශടᣇᑼࠍឭ᩺ߒ㧘DC ශടᣇᑼߣ ACDC หᤨශടᣇᑼߦࠃࠆ㒰㔚․ᕈࠍᲧセߔࠆ㧚ᦨᓟߦ㧘ᄙᢙ࠙ࠚ࡯ࡂ៞タᤨߦ߅ߌࠆACDC หᤨශടᣇᑼߩ㒰㔚ࠍ⹜ߺࠆ㧚

85 (29)2.

ታ㛎ⵝ⟎߅ࠃ߮ᣇᴺ㪠㫆㫅㫀㫑㪼㫉࿑ 1(a) ߦࠗࠝ࠽ࠗࠩ࡯᭎⇛࿑ࠍ␜ߔ㧚ࠗࠝ࠽ࠗࠩ࡯ߪ㧞ᧄߩࠬ࠹ࡦ࡟ࠬ⵾㊎㔚ᭂ߆ࠄߥࠅ㧘㐳ߐߪ 33 চ㧘⋥ᓘ 3 চ㧘వ┵ⷺߪ⚂ 20qߢ޽ࠆ㧚ߎࠇࠄߪࠕࠢ࡝࡞᧼ߦ࿕ቯߐࠇߡ޿㪘ࠆ㧚2 ᧄߩ㊎㔚ᭂߩ㑆㓒ߪ 65 চߢ޽ࠆ㧚࿑ 1(b) ߦታ㛎᭎⇛࿑ࠍ␜ߔ㧚ធ࿾ߐࠇߚ㊄ዻᕈኒ㐽ኈེౝߦ㧘ࠗࠝ࠽ࠗࠩ࡯㧘࠙ࠚ࡯ࡂ࿕ቯบ㧘ࠟࠬᵈ౉ࡁ࠭࡞㧘㕒㔚᳇࠮ࡦࠨ㧔KEYENCE㪦㪙㪛

SK-030/200㧔㧝ᨎ᷹ቯᤨ㧘಴ജᔕ╵ᤨ㑆 0.6s㧕㧘 ࠻࡟࠶ࠢ࡮
ࠫࡖࡄࡦ Model344㧔5 ᨎ᷹ቯᤨ㧘಴ജᔕ╵ᤨ㑆 3.0ms㧕㧕߇ข㪚ࠅઃߌࠄࠇߡ޿ࠆ㧚࠙ࠚ࡯ࡂߣࠗࠝ࠽ࠗࠩ࡯㔚ᭂߩవ┵ߩ᳓ᐔ〒㔌ߪ 30cm ߢ޽ࠆ㧚࠙ࠚ࡯ࡂߣ᷹ቯ࠮ࡦࠨߩ〒㔌ߪ㧝ᨎ᷹ቯᤨߢ 10㨙㨙㧘5 ᨎ᷹ቯᤨߢ 2mm ߢ޽ࠆ㧚ᧄታ㛎ߢߪ㧘

࿑ 2 ࠙ࠚ࡯ࡂ㕙਄ߩ᷹ቯὐ

⓸⚛ࡄ࡯ࠫߐࠇߚⵝ⟎ౝߢߩ࠙ࠚ࡯ࡂߦኻߔࠆ㒰㔚ലᨐࠍ

Fig. 2 Measurement points on wafer surface.

ᮨᡆߔࠆߚ߼㧘Ꮺ㔚࡮㒰㔚ࠍ N2 㔓࿐᳇ਛߢⴕߥߞߚ㧚ታ㛎ਛߩ O2 Ớᐲߪ 20ppm એਅߣߒ㧘N2 ᵹ㊂ߪ 5 l/min ߢ޽ࠆ㧚࿑

3.

2 ߦ࠙ࠚ࡯ࡂ㕙਄ߩ⴫㕙㔚૏ߩ᷹ቯὐ㧔O,A,B,C,D㧕ࠍ␜ߔ㧔࿑

3.1

1(b)ࠍ਄஥߆ࠄ⷗ߚ࿑㧚྾ⷺߪ࠙ࠚ࡯ࡂᡰᩇࠍ⴫ߒߡ޿ࠆ㧕㧚

࿑3(a),(b)ߦ⹜૞ࠗࠝ࠽ࠗࠩ࡯ߩ㔚ᭂ 1 ᧄߦ⋥ᵹ㔚࿶ࠍශട࠙ࠚ࡯ࡂ㕙਄ߩೋᦼᏪ㔚ಽᏓ㧘ฦශട㔚࿶ߢ㒰㔚ߒߚᓟߩ⴫ߒߚ႐วߩ㔚ᵹ᷹ቯ⚿ᨐࠍ␜ߔ㧚ߎߩታ㛎ߪ N2 㔓࿐᳇ਛߢ㕙㔚૏ಽᏓ㧘߅ࠃ߮⴫㕙㔚૏ߩᤨ㑆ᄌൻࠍ᷹ቯߔࠆ㧚߹ߚ㧘ⴕߞߚ㧚ߎߩታ㛎ߢߪ㧘1 ᧄߩࠗࠝ࠽ࠗࠩ࡯㔚ᭂ߇᡼㔚ߔࠆ⹜૞ߒߚࠗࠝ࠽ࠗࠩ࡯ߣᏒ⽼ߐࠇߡ޿ࠆࠗࠝ࠽ࠗࠩ࡯ߩ㒰

ߣ߈ߩ․ᕈࠍ⍮ࠆߚ߼ߦ㧘㔚ᭂࠍᵹࠇࠆ㔚ᵹࠍ᷹ቯߒ߿ߔߊ

㔚ߩ⚿ᨐࠍᲧセߔࠆ㧚ߔࠆߚ߼㧘㊎㔚ᭂ೨ᣇ 16.5mm ߩ૏⟎ߦኻะ㔚ᭂ㧔ᐔ᧼㔚ᭂ㧕ታ㛎⚿ᨐ෸߮⠨ኤ⹜૞ࠗࠝ࠽ࠗࠩ࡯ߩ㔚࿶㔚ᵹ․ᕈ

ࠍ⟎߈㧘᡼㔚㔚ᵹߩ᷹ቯࠍⴕߥߞߚ㧚ᱜߩශട㔚࿶ࠍᓢ‫ߦޘ‬ᄢ߈ߊߒߡ޿ߊߣ㧘5kV ߆ࠄ㔚ᵹ߇ᵹࠇᆎ߼㧘7kV ߢ⚂ 2ǴA ⒟ᐲ
ߩ᡼㔚㔚ᵹ߇ᵹࠇࠆ㧚⽶ߩශട㔚࿶ࠍᓢ‫ߦޘ‬ਅߍߡ޿ߊߣ㧘㧙3kV ߆ࠄ㔚ᵹ߇ᵹࠇᆎ߼ߚ߇㧘ߘߩᓟߪ᡼㔚߇ࠬ࠻࡝࡯ࡑ
⁁ߦિ߮ߡ㔚ᵹߪᕆ਄᣹ߒ㧘㧙3.7kV ߢߪ㧙700ǴA ⒟ᐲߩ㔚ᵹ߇ᵹࠇߚ㧚㔚ᵹ୯㧔↢ᚑ㔚⩄㊂㧕ߩᭂᕈଐሽᕈࠃࠅ㧘⓸⚛
㔓࿐᳇ਛߩࠗࠝ࠽ࠗࠩ࡯ߢߪᱜߩ⩄㔚☸ሶࠃࠅ⽶ߩ⩄㔚☸
࿑ 1(a) ⹜૞ࠗࠝ࠽ࠗࠩ࡯㔚ᭂሶߩ߶߁߇↢ᚑߐࠇ߿ߔ޿߽ߩߣ⠨߃ࠄࠇࠆ㧚

Fig. 1(a) Schematic diagram of ionizer electrodes.

㪞㪸㫊 㫀㫅㫃㪼㫋㪜㫃㪼㪺㫋㫉㫆㫊㫋㪸㫋㫀㪺 㪭㫆㫃㫋㫄㪼㫋㪼㫉㪠㫆㫅㫀㫑㪼㫉㪮㪸㪽㪼㫉㪮㪸㪽㪼㫉 㫊㫌㫇㫇㫆㫉㫋࿑ 1(b) ታ㛎᭎⇛࿑
Fig. 1(b) Schematic diagram of experiments.

Current [ǴA]

2

1

0

2
4
Applied Voltage [kV]6

࿑ 3(a) ශട㔚࿶ߣ᡼㔚㔚ᵹߩ㑐ଥ㧔ᱜ㧕
Fig.3(a) Applied voltage vs Current (positive).

86 (30)

32

2008

3.2.2 ࠗࠝ࠽ࠗࠩ࡯ශട㔚࿶ߣ࠙ࠚ࡯ࡂ⴫㕙㔚૏

0Current [ǴA]2

࿑ 4(a)ߦࠗࠝ࠽ࠗࠩ࡯ߩ㔚ᭂ 1 ᧄߦᱜߩ⋥ᵹ㔚࿶ࠍශടߒ

-200ߚߣ߈ߩ࠙ࠚ࡯ࡂߩ⴫㕙㔚૏ߩᤨ㑆⊛ᄌൻࠍ␜ߔ㧚࠙ࠚ࡯ࡂ-400

ශട㔚࿶߇+2kV㧘+3kV ߢߪ㧘⴫㕙㔚૏ߩೋᦼ୯߆ࠄߩᄌൻߩೋᦼ⴫㕙㔚૏ߪ㧙1kV ߣߒߚ㧚᷹ቯὐߪ࿑ 2 ߩ O ὐߢ޽ࠆ㧚ߪ⷗ࠄࠇߥ޿㧚ߎࠇߪ㧘࿑ 3(a)ߦ߅޿ߡ㧘4kV ᧂḩߢᱜߩ⩄-600㔚☸ሶߩ↢ᚑ߇ߥ޿߽ߩߣ⸃㉼ߔࠆߣᢛวᕈ߇޽ࠆ㧚ශട㔚

-800-6-4-2
Applied Voltage [kV]࿶߇ 4kV એ਄ߦߥࠆߣ⴫㕙㔚૏߇㧜V ࠍㅢㆊߒ㧘ᱜߦᏪ㔚ߔ0ࠆߎߣ߇ࠊ߆ࠆ㧚ශട㔚࿶ߩჇടߦߟࠇߡ⴫㕙㔚૏ߩᦨ⚳୯߽Ⴧടߒ㧘6kV ශടᤨߢߪ⴫㕙㔚૏ߪ⚂ 650V ߢ޽ࠆ㧚࿑ 3(b) ශട㔚࿶ߣ᡼㔚㔚ᵹߩ㑐ଥ㧔⽶㧕࿑ 4(b)ߦ㧘ࠗࠝ࠽ࠗࠩ࡯㔚ᭂ 1 ᧄߦ⽶ߩ⋥ᵹ㔚࿶ࠍශടߒ

Fig. 3(b) Applied voltage vs Current (negative).

ߚߣ߈ߩ⴫㕙㔚૏ߩᤨ㑆⊛ᄌൻࠍ␜ߔ㧚࠙ࠚ࡯ࡂߩೋᦼ⴫㕙㔚૏ࠍ 1kV ߣߒߚ㧚᷹ቯὐߪ࿑ 2 ߩ O ὐߢ޽ࠆ㧚ශട㔚࿶߇㧙2kV ߩߣ߈ߪ⴫㕙㔚૏ߩೋᦼ୯߆ࠄߩᄌൻߪ⷗ࠄࠇߥ޿

3.2

ࠗࠝ࠽ࠗࠩ࡯ߦࠃࠆ࠙ࠚ࡯ࡂߩᏪ㔚․ᕈ

߇㧘㧙4kV એ਄ߦߥࠆߣ⴫㕙㔚૏߇㧜V ࠍㅢㆊߒ⽶ߦᏪ㔚ߔ

3.2.1 ࠙ࠚ࡯ࡂߩᏪ㔚ಽᏓࠆߎߣ߇ࠊ߆ࠆ㧚ߎࠇߪ㧘࿑ 3(b)ߦ߅޿ߡ㧘㧙2kV એ਄ߢ⽶

⴫ 1 ߦ㧘⹜૞ࠗࠝ࠽ࠗࠩ࡯ࠍ↪޿ߡ࠙ࠚ࡯ࡂ(Ǿ300mm)ߩ

ߩ⩄㔚☸ሶߩ↢ᚑ߇ߥ޿߽ߩߣ⸃㉼ߔࠆߣᢛวᕈ߇޽ࠆ㧚ශ⴫㕙㔚૏ࠍ⚂r1kV ⒟ᐲߦᏪ㔚ߐߖߚߣ߈ߩ⴫㕙㔚૏ߩ㕙ౝട㔚࿶߇ᄢ߈ߊߥࠆߦߟࠇߡ⴫㕙㔚૏ߩᦨ⚳୯ߪᷫዋߒߡಽᏓࠍ␜ߔ㧚Ꮺ㔚ߪᱜᭂᕈ߅ࠃ߮⽶ᭂᕈߩ⋥ᵹ㔚࿶ࠍ↪޿ߡ޿ࠆ㧚ᱜᭂශടߩߣ߈ߣᲧセߔࠆߣ㧘⴫㕙㔚૏ߩᭂᕈ߇෻ォⴕߞߚ㧚⴫㕙㔚૏ߩ୯ߪ㧘Ꮺ㔚㐿ᆎ߆ࠄචಽᤨ㑆߇⚻ㆊߒߡߔࠆߩߦⷐߔࠆᤨ㑆߇⍴ߊ㧘ᦨ⚳⊛ߦ೔㆐ߔࠆ⴫㕙㔚૏ߩ⛘⴫㕙㔚૏߇৻ቯ୯ࠍ␜ߒߚߣ߈ߩ୯ߢ޽ࠆ㧔࠙ࠚ࡯ࡂߪ৻ᣤ

ኻ୯ߪჇടߒߡ߅ࠅ㧘㧙6kV ශടᤨߢߪ⴫㕙㔚૏߇㧙2.15kVᏪ㔚ߔࠆߣ㧘⴫㕙㔚૏ߪᢙಽ㑆߶ߣࠎߤᄌൻߒߥ޿㧕㧚ᱜᭂߦ㆐ߒߡ޿ࠆ㧚ߒߚ߇ߞߡ㧘2 ᧄߩ㔚ᭂߩߘࠇߙࠇߦᱜ࡮⽶Ꮺ㔚߅ࠃ߮⽶ᭂᏪ㔚ߩ޿ߕࠇߩ႐ว߽㧘࠙ࠚ࡯ࡂ㕙਄߶߷ဋߩ㔚࿶ࠍශടߔࠆ㒰㔚ᣇᑼߢߪ㧘ࠗࠝࡦࡃ࡜ࡦࠬࠍขࠆߚ߼৻ߦᏪ㔚ߒߡ޿ࠆߎߣ߇ಽ߆ࠆ㧚ߎߩߎߣ߆ࠄ㧘Ꮺ㔚࠙ࠚ࡯ߦߪᱜᭂࠃࠅ⽶ᭂߩ㔚࿶ߩ⛘ኻ୯ࠍૐߊขࠆᔅⷐ߇޽ࠆ㧚ࠗࡂࠍ㒰㔚ߔࠆ㓙ߦߪ㧘㒰㔚ߦነਈߔࠆ⩄㔚☸ሶߪ࠙ࠚ࡯ࡂ㕙ࠝ࠽ࠗࠩ࡯㔚ᭂߩශട㔚࿶߇╬ߒߊᭂᕈߩߎߣߥࠆ႐วࠍ਄ߦဋ৻ߦⴕ߈ਗ਼ߞߡ޿ࠆ߽ߩߣ⠨߃ࠄࠇࠆ㧚߹ߚ㧘ᓟㅀߩᲧセߔࠆߣ㧘⽶ࠍශടߔࠆ႐วߩᣇ߇ᱜߩ႐วࠃࠅ⴫㕙㔚૏㒰㔚ߩ⼏⺰ߢߪ㧘ೋᦼߩᏪ㔚㔚⩄㊂ߩ㕙ౝਇဋ৻ᕈߪήⷞߢ

ߩ⛘ኻ୯ߪᄢ߈޿߇㧘⴫㕙㔚૏ߩ㔚࿶ߩ㆑޿ߪᩴ߇ߕࠇࠆ߶

߈ࠆ߽ߩߣ⠨߃ࠄࠇࠆ㧚ࠗࠝ࠽ࠗࠩ࡯߇↢ᚑߒߚ⩄㔚☸ሶߩߤߩ߽ߩߢߪߥ޿㧚ᱜ⽶ߩශട㔚࿶ߩ㆑޿ߦࠃࠆ⴫㕙㔚૏ߩ⒖േߩ⁁ᘒߪ㧘ࠗࠝ࠽ࠗࠩ࡯ᓟᣇߩࠟࠬᵈ౉ࡁ࠭࡞ߦࠃࠆࠟ

⋧㆑ߪ㧘ᱜ⽶ߘࠇߙࠇߩ႐วߦ߅ߌࠆ⩄㔚☸ሶߩ↢ᚑ㊂ߩ㆑ࠬߩᵹࠇߩ⁁ᘒߣ㧘ࠗࠝ࠽ࠗࠩ࡯㔚ᭂ߆ࠄኻะ㔚ᭂߣߒߡߩ

޿߇⿠࿃ߔࠆߣหᤨߦ㧘࠙ࠚ࡯ࡂ⴫㕙ߩ⥄ὼ㉄ൻ⤑ߩ․ᕈߣ

㊄ዻ⵾ኒ㐽ኈེ߳ะ߆߁㔚᳇ജ✢ߩಽᢔߩ᭽ሶߦଐሽߔࠆߒߡ⴫㕙߇ᱜߦᏪ㔚ߒ߿ߔ޿௑ะߣ㧘ᱜ⽶ߩ⩄㔚☸ሶߩ⒖േ߇㧘ߎࠇࠄ߇ᓇ㗀ߒߡ৻᭽ߥᏪ㔚߇ታ⃻ߒߡ޿ࠆߩߢ޽ࠈ߁㧚2Ꮺ㔚ಽᏓpotential[kV]⴫㧝ㅦᐲߦ㆑޿߇޽ࠆߎߣߦ߽⿠࿃ߒߡ޿ࠆ߽ߩߣ⠨߃ࠄࠇࠆ㧚

Table 1 The distribution of charging.

4kV

15kV

6kV

Positive charging

Negative charging

Measurement

Surface potential

Surface potential

point

[kV]

[kV]

O

0.95

䋭1.03

A

1.02

䋭1.12

B

1.02

䋭1.11

C

1.02

䋭1.10

࿑ 4(a) ᱜᭂ⋥ᵹ㔚࿶ශടߦࠃࠆ⴫㕙㔚૏ᄌൻ

D

1.02

䋭1.11

Fig. 4(a) Time variation on surface potential

02kV

3kV-1
010
Time[sec](positive DC voltage).

- 3 -

2030

87 (31)ࠦࡠ࠽᡼㔚ᣇᑼࠗࠝ࠽ࠗࠩ࡯ߣ㒰㔚߳ߩᔕ↪㧔ะᎹࠄ㧕ᵹ㔚࿶ࠍශടߒߚߣ߈㧔DC ශടᣇᑼ㧕ߩ⴫㕙㔚૏ߩ㕙ౝಽ

potential[kV]1Ꮣߢ޽ࠆ㧚⴫㕙㔚૏ߩ୯ߪ㧘㒰㔚㐿ᆎ߆ࠄචಽᤨ㑆߇⚻ㆊߒ
-2kV0ߚߣ߈ߩᦨ⚳୯ߢ޽ࠆ㧚࠙ࠚ࡯ࡂߩ⴫㕙㔚૏ߩೋᦼ୯ߪr
1kV ߣߒߚ㧚ࠗࠝ࠽ࠗࠩ࡯ߦශടߔࠆ㔚࿶ߪ㧘⴫㕙㔚૏߇ߢ-3kV-1-5kV-4kV߈ࠆߛߌዊߐߊߥࠆࠃ߁ߥ᧦ઙࠍ᳞߼㧘2 ᧄߩ㊎㔚ᭂߩ߁ߜ-6kVߩ৻ᣇߦߪ㧗5.5kV ࠍ㧘ઁᣇߦߪ㧙2.5kV ࠍශടߒߚ㧚ೋᦼ୯㧗1kV ߦᏪ㔚ߒߚ࠙ࠚ࡯ࡂߩ㒰㔚ߢߪ㧘᷹ቯὐ O ߢ⴫㕙㔚

-2૏ߪ㧙10V ߦૐᷫߒߡ߅ࠅ㧘ઁߩ᷹ቯὐߢ߽ 3V ߩ▸࿐ౝߢ

010Time[sec]2030⴫㕙㔚૏ߪ৻⥌ߒߡ޿ࠆ㧚߹ߚ㧘ೋᦼ୯㧙1kV ߦᏪ㔚ߒߚ࠙ࠚ࡯ࡂߩ㒰㔚ߢߪ㧘᷹ቯὐ O ߢ⴫㕙㔚૏ߪ㧙20V ߦჇട㧔⛘࿑ 4(b) ⽶ᭂ⋥ᵹ㔚࿶ශടߦࠃࠆ⴫㕙㔚૏ᄌൻኻ୯ߪᷫዋ㧕ߒ㧘ઁߩ᷹ቯὐߢ߽ 5V ߩ▸࿐ౝߢ৻⥌ߒߡ޿

Fig. 4(b) Time variation on surface potentialࠆ㧚(negative DC voltage).

3.2.2 ߩታ㛎⚿ᨐࠃࠅ AC 㔚࿶ߛߌࠍශടߔࠆߣ㧘࠙ࠚ࡯ࡂߩᏪ㔚߇⽶ᭂᕈߦ஍ࠆߎߣ߇ࠊ߆ߞߚߩߢ㧘ߎࠇࠍ㒐ߋߚ߼ߦ㧘2 ߟߩࠗࠝ࠽ࠗࠩ࡯㔚ᭂߩ߁ߜ㧘৻ᣇߪ੤ᵹ㔚࿶㧘ઁᣇߦᱜߩ⋥ᵹ㔚࿶ࠍធ⛯ߒ㧘ਔ⠪ߩ⚵ߺวࠊߖࠍ⹜ߺߚ㧔ACDC

potential[kV]

15kVPP

09kVPPหᤨශടᣇᑼ㧕㧚⴫ 3 ߪ㧘Ꮺ㔚ߒߚ࠙ࠚ࡯ࡂߩ੤ᵹ㔚࿶㧔50Hz㧕ߣ⋥ᵹ㔚࿶ߩ⚵ߺวࠊߖߦࠃߞߡ㒰㔚ࠍⴕߞߚᓟߩ⴫㕙㔚7kVPP૏ߩ㕙ౝಽᏓߢ޽ࠆ㧚⴫㕙㔚૏ߩ୯ߪ㧘㒰㔚㐿ᆎ߆ࠄචಽᤨ
11kVPP㑆߇⚻ㆊߒߚߣ߈ߩᦨ⚳୯ߢ޽ࠆ㧚࠙ࠚ࡯ࡂߩ⴫㕙㔚૏ߩೋ-1-2

ᦼ୯ߪr1kV ߣߒߚ㧚

010Time[sec]20

⴫ 2 㒰㔚ߦࠃࠆ㔚૏ಽᏓ㧔DC㧕
Table 2 The potential distribution by neutralization (DC).

࿑ 5 ੤ᵹ㔚࿶ශടߦࠃࠆ⴫㕙㔚૏ᄌൻ (50Hz)
Fig.5 Time variation on surface potential (AC 50Hz).
࿑ 5 ߦ㧘ࠗࠝ࠽ࠗࠩ࡯㔚ᭂ 1 ᧄߦ੤ᵹ㔚࿶㧔50Hz㧕ࠍශടߒߚ႐วߩ⴫㕙㔚૏ߩᤨ㑆⊛ᄌൻࠍ␜ߔ㧚࠙ࠚ࡯ࡂߩೋᦼ⴫
㕙㔚૏ࠍr㧝kV ߣߒߚ㧚࠙ࠚ࡯ࡂࠍ 1kV ߦᏪ㔚ߐߖߚ⁁ᘒ߆ࠄࠗࠝ࠽ࠗࠩ࡯㔚ᭂߦ 5k VPP ࠍශടߒߚߣ߈ߪ⴫㕙㔚૏ߦᄌൻߪߥ޿߇㧘7kVPP ࠍශടߒߚ႐วߢߪ 500V ⒟ᐲᷫዋߒߚ㧚Initial value :㧗1kV

Initial value :䋭1kV

Meas. Position Surface potential [V]Surface potential [V]

O

䋭10

䋭20A

䋭13

䋭15B

䋭13䋭16C

䋭10

䋭20D

䋭10䋭15ශട㔚࿶ࠍ਄ߍࠆߦߟࠇߡ⴫㕙㔚૏ߪᷫዋߒ㧘0V ࠍㅢㆊߒߡ⽶ߦᏪ㔚ߔࠆ௑ะ߇޽ࠆ㧚࠙ࠚ࡯ࡂࠍ㧙1kV ߦᏪ㔚ߐߖߚ⴫ 3 㒰㔚ߦࠃࠆ㔚૏ಽᏓ㧔ACDC ශട㧕⁁ᘒߢ㔚ᭂߦ੤ᵹ㔚࿶ࠍශടߒߚ႐วߢߪ㧘⴫㕙㔚૏ߩᭂᕈ

Table 3 The potential distribution by neutralization (ACDC).

ߪ⽶ߩ߹߹ߢ޽ࠅ㧘ᱜߦォߕࠆߎߣߪߥ޿㧚ߎࠇߪ㧘੤ᵹߦ

Initial value :䋫1kV߅޿ߡ߽⋥ᵹߩ႐วߣห᭽ߦ㧘ᱜߩඨ๟ᦼߢ↢ᚑߐࠇࠆᱜߩ
Meas. Position⩄㔚☸ሶߩᢙࠃࠅ߽㧘⽶ߩඨ๟ᦼߢ↢ᚑߐࠇࠆ⽶ߩ⩄㔚☸ሶ

Initial value :䋭1kVSurface potential [V] Surface potential [V]

O

䋭13

䋭12A

䋭12

䋭10B

䋭12

䋭10

3.3.1 㒰㔚ᓟߩ࠙ࠚ࡯ࡂ⴫㕙㔚૏ಽᏓC

䋭12

䋭12

⴫ 2 ߪ㧘ࠗࠝ࠽ࠗࠩ࡯ߩ㧞ᧄߩ㔚ᭂߦߘࠇߙࠇᱜ࡮⽶ߩ⋥D

䋭11

䋭13ߩᣇ߇ᄙ޿߽ߩߣ⠨߃ࠄࠇࠆ㧚
3.3ࠗࠝ࠽ࠗࠩߦࠃࠆ࠙ࠚ࡯ࡂߩ㒰㔚․ᕈ

- 4 -

88 (32)3222008ࠗࠝ࠽ࠗࠩ࡯ߦශടߒߚ㔚࿶ߪ㧘2 ᧄߩ㊎㔚ᭂߩ߁ߜ㧘৻ᣇߦߪ AC7kVPP㧔ታല୯ 2.4kV㧕ࠍශടߒ㧘ઁᣇߦߪ AC ශ

2potential[kV]ടන⁛ߦ߅ߌࠆࠝࡈ࠮࠶࠻ࠍߢ߈ࠆߛߌᛂߜᶖߔࠃ߁ߦ
DC5kV ࠍශടߒߚ㧚ೋᦼ୯㧗1kV ߦᏪ㔚ߒߚ࠙ࠚ࡯ࡂߩ㒰㔚ߢߪ㧘᷹ቯὐ O ߢߪ㧙13V ߦૐᷫߒߡ߅ࠅ㧘ઁߩ᷹ቯὐߢ߽ 2Vએౝߩ▸࿐ߢ৻⥌ߒߡ޿ࠆ㧚߹ߚ㧘ೋᦼ୯㧙1kV ߩᏪ㔚࠙ࠚ࡯ࡂߢߪ㧘㒰㔚ߦࠃߞߡ᷹ቯὐ O ߢߪ㧙12V ߦૐᷫߒ㧘ઁߩ᷹ቯὐߢ߽ 3V એౝߩ▸࿐ߢ৻⥌ߒߡ޿ࠆ㧚

10-1
-2-1

3.3.2 ࠙ࠚ࡯ࡂߩ㒰㔚ᤨ㑆0

࿑ 6 ߪ㧘ᱜ⽶ߦᏪ㔚ߒߚ࠙ࠚ࡯ࡂ߇㒰㔚ߦࠃߞߡ㧘ߘߩ⴫
࿑7㕙㔚૏߇ೋᦼ୯߆ࠄᤨ㑆ߣߣ߽ߦᷫ⴮ߒߡࠁߊ᭽ሶࠍ⴫ߒ

23㒰㔚ᤨߩ⴫㕙㔚૏ᄌൻ (ACDC ශടᣇᑼ)Fig.7

ߡ޿ࠆ㧚⴫㕙㔚૏ߩೋᦼ୯ߣߒߡr1㨪r2kV ⒟ᐲߦ࠙ࠚ࡯

1Time[sec]Time variation on surface potential during

neutralization (ACDC voltage).

ࡂࠍᏪ㔚ߐߖ㧘DC ශടᣇᑼߢ㒰㔚ߒߚ႐วߢ޽ࠆ㧚ࠗࠝ࠽ࠗࠩ࡯ߩ 2 ߟߩ㔚ᭂߦߪ㧘
㧗5kV ߣ㧙2kV ߩ㔚࿶ࠍශടߒߚ㧚⴫㕙㔚૏߇᡼㔚㐿ᆎ߆ࠄೋᦼ㔚࿶ߩ 5㧑ߦᷫዋߔࠆ߹ߢߩᤨ

࿑ 7 ߪ㧘⴫㕙㔚૏ࠍr1㨪r2kV ⒟ᐲߦᏪ㔚ߐߖߚ࠙ࠚ࡯㑆ࠍ㒰㔚ᤨ㑆ߣቯ⟵ߔࠆߣ㧘ᱜߦᏪ㔚ߐߖߚ࠙ࠚ࡯ࡂߩ㒰㔚ࡂࠍ㧘
ACDC ශടᣇᑼߢ㒰㔚ߒߚ႐วߢ޽ࠆ㧚AC 㔚࿶ߪ 50Hz㧘ߢߪ㧘㒰㔚ᤨ㑆ߪ⚂ 0.8 ⑽ߢ޽ࠆ㧚߹ߚ㧘⽶ߦᏪ㔚ߐߖߚ࠙

7kVpp㧔ታല୯ 2.4kV㧕㧘DC 㔚࿶ߪ㧗5kV ߢ޽ࠆ㧚⹜૞ࠗࠝࠚ࡯ࡂߩ㒰㔚ߢߪ㧘㒰㔚ᤨ㑆ߪ⚂ 3.3 ⑽ߢ޽ࠆ㧚࠽ࠗࠩ࡯ߪ㧘ᱜߦᏪ㔚ߒߚ࠙ࠚ࡯ࡂߩ㒰㔚ᤨ㑆ߪ⚂ 0.8 ⑽ߢ

Ყセߩߚ߼ߦ㧘DC ශടᣇᑼߩᏒ⽼ࠗࠝ࠽ࠗࠩ࡯ߢห᭽ߩ

޽ࠆ㧚⽶ߦᏪ㔚ߒߚ࠙ࠚ࡯ࡂߩ㒰㔚ᤨ㑆ߪ㧘⴫㕙㔚૏ߩೋᦼታ㛎ࠍⴕߞߚ㧚ߎߩᣇᑼߪ 2 ߟߩ㔚ᭂߦ㧘ᄢ߈ߐ߇หߓ㧘ᱜ୯߇㧙1kV ߩߣ߈ߪ⚂ 2 ⑽㧘㧙2kV ߢߪ⚂ 2.8 ⑽ߣߥࠆ㧚߹⽶ߩ⋥ᵹ㔚࿶ࠍߘࠇߙࠇශടߔࠆᣇᑼߢ޽ࠆ㧚ߎߩࠗࠝ࠽ࠗ

ߚ㧘⴫㕙㔚૏ߩᦨ⚳୯ߪ⚂㧙10V ߢ޽ࠆ㧚DC ශടᣇᑼߦࠃࠩ࡯ߢߪ㧘⴫㕙㔚૏ߩೋᦼ୯ࠍ 2kV ߣߒߚߣ߈㧘㒰㔚㐿ᆎ߆ࠆ㒰㔚ߩ႐วߣห᭽ߦ㧘⽶ߦᏪ㔚ߒߚ࠙ࠚ࡯ࡂߩ㒰㔚ߪᱜߦࠄ⚂ 1 ⑽ᓟߦ⴫㕙㔚૏ߪ⚂㧙200V ߦૐᷫߒߚ㧚ߎߩߎߣ߆

Ꮺ㔚ߒߚߣ߈ߩ㒰㔚ᤨ㑆ߣᲧセߒߡ㒰㔚ᤨ㑆߇㐳ߊߥࠆ㧚ࠄ㧘ߎߩ႐ว߽ᱜߩ㔚⩄ߦᲧߴߡ⽶ߩ㔚⩄ߩ߶߁߇ࠃࠅᄙߊ

3.3.3 ᄙᢙ࠙ࠚ࡯ࡂⓍタᤨߩ㒰㔚ᤨ㑆↢ᚑߐࠇࠆߣ⠨߃ࠄࠇࠆ㧚߹ߚ㧘⽶ߦᏪ㔚ߒߚ࠙ࠚ࡯ࡂߩ㒰࿑ 8(a)(b)ߪ㧘㒰㔚ߦ↪޿ࠆኒ㐽ኈེߦ 5 ᨎߩ࠙ࠚ࡯ࡂࠍⓍ㔚ߢߪ㧘ᱜߦᏪ㔚ߒߚ࠙ࠚ࡯ࡂߩ㒰㔚ᤨ㑆ߣᲧߴߡ㧘ߤߩ᧦タߒ㧘⴫㕙㔚૏ࠍr1kV ߦᏪ㔚ߐߖߚ⁁ᘒ߆ࠄ ACDC ᣇᑼߢઙߢ߽㒰㔚ᤨ㑆߇㐳ߊߥࠆߎߣ߇ࠊ߆ߞߚ㧚ߎࠇߪ㧘ᧄ⎇ⓥ㒰㔚ߒߚߣ߈ߩ㒰㔚ᤨ㑆ߢ޽ࠆ㧚࠙ࠚ࡯ࡂߩ㑆㓒ߪ 11mm ߣߩ⹜૞ེߣหߓ௑ะࠍ␜ߔ߽ߩߢ޽ࠆ㧚ߒߚ㧚࠙ࠚ࡯ࡂߪ਄Ბߩ߽ߩ߆ࠄ No.1㧘No.2㧘㨯㨯㨯㧘No.5 ߣ⇟ภઃߌߒ㧘No.2㧘No.3 ߩ࠙ࠚ࡯ࡂࠍ᷹ቯߒߚ㧚

1
0-1

0-1

-2-1

No.2

1
potential[kV]potential[kV]

2-1

0

1
Time[sec]

2

3

0

1
Time[sec]23

࿑ 8(a) 㒰㔚ᤨߩ⴫㕙㔚૏ᄌൻ (ᄙᲑⓍタ, No.2)
Fig. 8(a) Time variation on surface potential during࿑ 6 㒰㔚ᤨߩ⴫㕙㔚૏ᄌൻ (DC ශടᣇᑼ)neutralization (multi-wafer, No.2).

Fig. 6 Time variation on surface potential (DC voltage).
- 5 -89 (33)ࠦࡠ࠽᡼㔚ᣇᑼࠗࠝ࠽ࠗࠩ࡯ߣ㒰㔚߳ߩᔕ↪㧔ะᎹࠄ㧕㒰㔚ߩ㕙ౝဋ৻ᕈ㧘ࠗࠝࡦࡃ࡜ࡦࠬ㧘㒰㔚ᤨ㑆ߩ᷹ቯࠍⴕߞ

No.3

potential[kV]1ߚ㧚DC ශടᣇᑼࠦࡠ࠽᡼㔚ဳࠗࠝ࠽ࠗࠩ࡯ࠍ↪޿ߡࠪ࡝ࠦࡦ࠙ࠚ࡯ࡂ⴫㕙ࠍᏪ㔚ߐߖࠆߣ㧘ᱜᭂ㧘⽶ᭂߩਔᣇߦ߅޿ߡ࠙ࠚ࡯ࡂ㕙਄ߩ⴫㕙㔚૏ಽᏓߪဋ৻ߦߥࠆ㧚Ꮺ㔚ߒߚࠪ࡝ࠦ

0ࡦ࠙ࠚ࡯ࡂࠍ AC ශടᣇᑼࠗࠝ࠽ࠗࠩ࡯ߢ㒰㔚ߔࠆߣ㧘࠙ࠚ࡯ࡂߩ⴫㕙㔚૏ߪ⽶ߦᏪ㔚ߔࠆ௑ะ߇޽ࠆ㧚ACDC หᤨශടᣇᑼࠗࠝ࠽ࠗࠩ࡯ࠍ↪޿ߡ㒰㔚ࠍⴕ߁ߣ㧘⴫㕙㔚૏ߪ㧙10V-1

㨪㧙20V ⒟ᐲ߹ߢૐᷫߒ㧘⋡ᮡ୯r50V ࠍ㆐ᚑߒߚ㧚㒰㔚ᤨ-1

01Time[sec]23㑆㧔ᷫ⴮ᤨ㑆㧕ߪ㧘࠙ࠚ࡯ࡂ⴫㕙߇ᱜߦᏪ㔚ߔࠆߣ߈ߦᲧߴ
ߡ⽶ߦᏪ㔚ߒߚߣ߈ߩ߶߁߇㐳ߊߥࠆ㧚DC ශടᣇᑼߦ߅ߌ

࿑ 8(b) 㒰㔚ᤨߩ⴫㕙㔚૏ᄌൻ (ᄙᲑⓍタ, No.3)

ࠆ㒰㔚ᤨ㑆ߪ㧘࠙ࠚ࡯ࡂࠍ⴫㕙㔚૏㧗1kV ߦᏪ㔚ߒߚߣ߈ߪ

Fig. 8(b) Time variation on surface potential during

0.8 ⑽㧘㧙1kV ߦᏪ㔚ߒߚߣ߈ߪ 3.3 ⑽ߢ޽ࠆ㧚ACDC ශട

neutralization (multi-wafer, No.3).

ᣇᑼߦ߅ߌࠆ㒰㔚ᤨ㑆ߪ㧘࠙ࠚ࡯ࡂࠍ⴫㕙㔚૏㧗1kV ߦᏪ㔚ߒߚߣ߈ߪ 0.8 ⑽㧘㧙1kV ߦᏪ㔚ߒߚߣ߈ߪ 2 ⑽ߢ޽ࠆ㧚߹࠙ࠚ࡯ࡂ਄ߩ᷹ቯὐߪ࿑ 2 ߩ O ὐߣߒߚ㧚Ⓧタߒߚ࠙ࠚ࡯

ߚ㧘࠙ࠚ࡯ࡂࠍⶄᢙᨎⓍタߒߚ⁁ᘒߢߩ㒰㔚߇น⢻ߢ޽ࠆ㧚ࡂห჻ߩ㑆㓒߇ 11mm ߩߣ߈ߪ㧘ࠗࠝ࠽ࠗࠩ࡯ߢ↢ᚑߐࠇߚ㔚⩄߇೔㆐ߒ㧘㒰㔚߇น⢻ߢ޽ࠆ㧚ߎߩ႐วߩ㒰㔚ᤨ㑆ߪ㧘⴫㕙㔚૏ߩೋᦼ୯ࠍ㧗1kV ߣߒߚ႐วߪ⚂ 0.3 ⑽㧘㧙1kV ߢߪ⚂ 1.2 ⑽ߢ޽ࠆ㧚࠙ࠚ࡯ࡂࠍ⽶ߦᏪ㔚ߒߚߣ߈ߩ㒰㔚ᤨ㑆ߪ㧘ᱜߦᏪ㔚ߒߚ႐วߣᲧセߒߡ㐳ߊߥߞߡ޿ࠆ߇㧘ߎߩ௑ะߪ㧘࠙ࠚ࡯ࡂࠍ 1 ᨎߛߌ㒰㔚ߔࠆ႐วߣห᭽ߢ޽ࠆ㧚
4.

߹ߣ߼ᄢ᳇࿶ਅߩ⓸⚛㔓࿐᳇ਛߦ߅޿ߡ㧘ࠦࡠ࠽᡼㔚ဳࠗࠝ࠽ࠗ

ࠩ࡯ࠍ↪޿ߡࠪ࡝ࠦࡦ࠙ࠚ࡯ࡂߩᏪ㔚ߣ㒰㔚ࠍⴕ޿㧘Ꮺ㔚࡮

- 6 -ෳ⠨ᢥ₂1) H. Inaba, T. Ohmi, M. Morita, M. Nakamura, T. Yoshida, T.
Okada: IEEE Trans. Semiconduct. Manufactur.., 5 (1992) 3592) ੑỈᱜⴕ㧦㕒㔚᳇▤ℂ౉㐷㧘Ꮏᬺ⺞ᩏળ (2004)3) ᧛↰㓶ม㧦㕒㔚᳇ߩၮ␆ߣᏪ㔚㒐ᱛᛛⴚ㧘ᣣೀᎿᬺᣂ⡞␠ (1998)
4) J.S.Chang, A.A.Berezin: J. Electrostat., 51 (2001) 64
5) A. Ohsawa: J. Electrostat., 63 (2005) 45; ibid. 63 (2005) 767;ibid. 65 (2007) 598