RGT30TM65D
Datasheet

650V 15A Field Stop Trench IGBTOutline

VCES

650V

IC(100°C)

8A

VCE(sat) (Typ.)

1.65V@IC=15A

PD

32W

Features

TO-220NFM(1)(2)(3)

Inner Circuit

1) Low Collector - Emitter Saturation Voltage(2)2) Low Switching Loss

(1) Gate(2) Collector(3) Emitter*13) Short Circuit Withstand Time 5μs(1)4) Built in Very Fast & Soft Recovery FRD*1 Built in FRD(3)(RFN - Series)5) Pb - free Lead Plating ; RoHS Compliant

Packaging Specifications

Applications

Packaging

General Inverter

Reel Size (mm)-Tape Width (mm)-UPS

Type

Power Conditioner
WelderTube

Basic Ordering Unit (pcs)

1,000Packing CodeC9Marking

RGT30TM65D

Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)Parameter

SymbolValue

UnitCollector - Emitter Voltage

VCES

650

VGate - Emitter Voltage

VGES

30

V

TC = 25°C

IC

14A

TC = 100°C

IC

8A

45

A

Collector Current
Pulsed Collector Current

ICP

*1

TC = 25°C

IF17A

TC = 100°C

IF9A

*145

A

TC = 25°C

PD32W

TC = 100°C

PD16W

Operating Junction TemperatureTj40 to +175°CStorage TemperatureTstg

55 to +175°C

Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation

IFP*1 Pulse width limited by Tjmax.
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Datasheet

RGT30TM65D
Thermal ResistanceParameter

SymbolValues
Min.

Typ.

Max.

Unit

Thermal Resistance IGBT Junction - CaseRθ(j-c)

--

4.59

°C/W

Thermal Resistance Diode Junction - CaseRθ(j-c)--

5.44°C/W

IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)Parameter

SymbolCollector - Emitter Breakdown
Voltage

BVCES

Collector Cut - off Current

Conditions

Values

Unit

Min.

Typ.

Max.

IC = 10μA, VGE = 0V

650--VICES

VCE = 650V, VGE = 0V--10μA

Gate - Emitter Leakage Current

IGES

VGE = 30V, VCE = 0V

--

200

nA

Gate - Emitter Threshold
Voltage

VGE(th)VCE = 5V, IC = 10.0mA

5.0

6.0

7.0V

Tj = 25°C

-1.65

2.1

V

Tj = 175°C-2.15-IC = 15A, VGE = 15V
Collector - Emitter Saturation
Voltagewww.rohm.com© 2017 ROHM Co., Ltd. All rights reserved.

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Datasheet

RGT30TM65DIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)Parameter

SymbolConditions

Values
Min.

Typ.

Max.

Input CapacitanceCies

VCE = 30V

-780-

Output CapacitanceCoes

VGE = 0V

-35-

Reverse Transfer CapacitanceCres

f = 1MHz-13-

Total Gate Charge

Qg

VCE = 300V

-32-

Gate - Emitter Charge

Qge

IC = 15A-

8-

Gate - Collector Charge

Qgc

VGE = 15V

-11-Turn - on Delay Timetd(on)IC = 15A, VCC = 400V

-18-Rise Timetr

VGE = 15V, RG = 10Ω-

20-

Turn - off Delay Timetd(off)Tj = 25°C-64-

Fall Timetf

Inductive Load-

75-

Turn - on Delay Timetd(on)IC = 15A, VCC = 400V

-18-

Rise Timetr

VGE = 15V, RG = 10Ω-

22-

Turn - off Delay Timetd(off)Tj = 175°C-

74-

Fall Timetf

Inductive Load-

130-

Unit

pF

nC

nsns

IC = 45A, VCC = 520V
Reverse Bias Safe Operating AreaRBSOA VP = 650V, VGE = 15V

FULL SQUARE-RG = 50Ω, Tj = 175°C
VCC ≦ 360VShort Circuit Withstand Timetsc

VGE = 15V5--μs

Tj = 25°C

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Datasheet

RGT30TM65D
FRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)Parameter

SymbolConditions

Values

Unit

Min.

Typ.

Max.

Tj = 25°C

-

1.5

1.95

Tj = 175°C

-

1.3-

-55-

ns-

6.0-

A-

0.19-

μC-

141-

ns-

9.5-

A-

0.79-

μC

IF = 15A
Diode Forward Voltage

VF

Diode Reverse Recovery Timetrr

Diode Peak Reverse RecoveryCurrentIrr

Diode Reverse Recovery
ChargeQrr

Diode Reverse Recovery Timetrr

Diode Peak Reverse Recovery
CurrentIrr

Diode Reverse Recovery
ChargeQrr

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IF = 15A
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C

IF = 15A
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C

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Datasheet

RGT30TM65DElectrical Characteristic Curves

Fig.2 Collector Current vs. Case Temperature

40163514Collector Current : IC [A]Power Dissipation : PD [W]

Fig.1 Power Dissipation vs. Case Temperature

302520151010864
Tj≦175ºC
VGE≧15V250002550751001251500175255075100125150175

Case Temperature : Tc [ºC]

Case Temperature : Tc [ºC]Fig.3 Forward Bias Safe Operating Area

Fig.4 Reverse Bias Safe Operating Area
60

1000

5010µs100Collector Current : IC [A]

Collector Current : IC [A]

1210100µs
10.1

TC= 25ºCSingle Pulse

403020100.01

Tj≦175ºC
VGE=15V01

10100

10000Collector To Emitter Voltage : VCE[V]www.rohm.com© 2017 ROHM Co., Ltd. All rights reserved.

200400600800Collector To Emitter Voltage : VCE[V]5/11

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Datasheet

RGT30TM65DElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

4545
Tj= 25ºC

35

VGE= 20V
VGE= 12V

30

VGE= 10V

25
2015
10

Tj= 175ºC

40Collector Current : IC [A]

Collector Current : IC [A]40

VGE= 15V

VGE= 8V

5

VGE= 20V

35
30

VGE= 15V

25

VGE= 12V

15
VGE= 8V

105000123450Collector To Emitter Voltage : VCE[V]Fig.7 Typical Transfer Characteristics

12345Collector To Emitter Voltage : VCE[V]Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature

30Collector To Emitter Saturation Voltage: VCE(sat) [V]

4VCE= 10V

25Collector Current : IC [A]VGE= 10V

20

201510
Tj= 175ºC

5Tj= 25ºC

002

46810IC= 30A
3IC= 15A

2IC= 8A
102512Gate To Emitter Voltage : VGE [V]www.rohm.com© 2017 ROHM Co., Ltd. All rights reserved.

VGE= 15V

5075100125150

175Junction Temperature : Tj [ºC]6/11

2017.05 - Rev.ADatasheet

RGT30TM65DElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter VoltageCollector To Emitter Saturation Voltage: VCE(sat) [V]Collector To Emitter Saturation Voltage: VCE(sat) [V]

20Tj= 25ºC
15IC= 8A
IC= 15A

10IC= 30A
5051015Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20Tj= 175ºC
15IC= 8A
10IC= 15A
IC= 30A

50205Gate To Emitter Voltage : VGE [V]1015Gate To Emitter Voltage : VGE [V]Fig.11 Typical Switching Timevs. Collector Current

Fig.12 Typical Switching Timevs. Gate Resistance

10001000
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad

VCC=400V, IC=15A
VGE=15V, Tj=175ºC
Inductive ｌoad

Switching Time [ns]Switching Time [ns]20tf
100td(off)tf
100td(off)trtrtd(on)100102030400Collector Current : IC [A]www.rohm.com© 2017 ROHM Co., Ltd. All rights reserved.

td(on)

101020304050

Gate Resistance : RG [Ω]7/11

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Datasheet

RGT30TM65D

Fig.13 Typical Switching Energy Lossesvs. Collector Current

Fig.14 Typical Switching Energy Losses
vs. Gate Resistance

1010Switching Energy Losses [mJ]

Switching Energy Losses [mJ]Electrical Characteristic Curves

1EoffEon

0.1

VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad

1Eoff

Eon
0.1
VCC=400V, IC=15A
VGE=15V, Tj=175ºC
Inductive ｌoad
0.01

0.01
010

2030040

Collector Current : IC [A]

2030

10000

15CiesCoes

10Cres

f=1MHz
VGE=0V
Tj=25ºC

10.01

Gate To Emitter Voltage : VGE [V]Fig.16 Typical Gate Charge

1004050Gate Resistance : RG [Ω]Fig.15 Typical Capacitancevs. Collector To Emitter Voltage

1000

Capacitance [pF]10105
VCC=300V
IC=15A
Tj=25ºC
00.1

1101000Collector To Emitter Voltage : VCE[V]www.rohm.com© 2017 ROHM Co., Ltd. All rights reserved.

10203040Gate Charge : Qg [nC]8/11

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Datasheet

RGT30TM65DElectrical Characteristic Curves

Fig.17 Typical Diode Forward Current
vs. Forward Voltage

Fig.18 Typical Diode Reverse Recovery Timevs. Forward Current
40045Reverse Recovery Time : trr [ns]Forward Current : IF [A]403530252015
Tj= 175ºC10

Tj= 25ºC

5

VCC=400V
diF/dt=200A/µs
Inductive ｌoad
300

200

Tj= 175ºC100

Tj= 25ºC

0000.5

11.5

22.503Forward Voltage : VF[V]

2030

4050

Forward Current : IF [A]Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current

Fig.19 Typical Diode Reverse Recovery Current
vs. Forward Current
20

2.5

Reverse Recovery Charge : Qrr [µC]

Reverse Recovery Current : Irr [A]

1015

10

Tj= 175ºC

5VCC=400V
diF/dt=200A/µs
Inductive ｌoad

Tj= 25ºC
0

VCC=400V
diF/dt=200A/µs
Inductive ｌoad

21.51

Tj= 175ºC

0.5
Tj= 25ºC
0010203040500

Forward Current : IF [A]www.rohm.com© 2017 ROHM Co., Ltd. All rights reserved.

1020304050

Forward Current : IF [A]

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Datasheet

RGT30TM65DElectrical Characteristic Curves

Fig.21 IGBT Transient Thermal Impedance
100.2

Transient Thermal Impedance: ZthJC [ºC/W]

0.1

D= 0.51Single Pulse
0.01
0.1

0.05 0.02

PDM
t1t2
Duty=t1/t2
Peak Tj=PDM×ZthJCTC

0.01
0.0001

0.001

0.01

0.11

10100

Pulse Width : t1[s]Fig.22 Diode Transient Thermal ImpedanceTransient Thermal Impedance: ZthJC [ºC/W]

100.1

0.2 D= 0.5

10.1

0.02

0.01 Single Pulse

PDM

0.05

t1t2
Duty=t1/t2
Peak Tj=PDM×ZthJCTC

0.01
0.0001

0.001

0.01

0.1

110100

Pulse Width : t1[s]www.rohm.com© 2017 ROHM Co., Ltd. All rights reserved.

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Datasheet

RGT30TM65D
Inductive Load Switching Circuit and Waveform

Gate Drive Time90%
D.U.T.
D.U.T.

VGE

10%

VG

90%

Fig.23 Inductive Load Circuit

IC

10%td(on)trtonIFtd(off)tftoff

trr , Qrr

VCE
diF/dtVCE(sat)

Irr

Fig.25 Diode Reverce Recovery Waveform

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Fig.24 Inductive Load Waveform

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NoticeNotes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safetymeasures such as complying with the derating characteristics, implementing redundant andfire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have noresponsibility for any damages arising out of the use of our Poducts beyond the rating specified byROHM.
4) Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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any license to use or exercise intellectual property or other rights held by ROHM or any otherparties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use ofsuch technical information.
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