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(åwúËõAg¤@\jÍ¶ßÉáÁïdÍC¬®ìðÀ»·é¼±ÌfoCXJ­Éü¯ÄCXP[O¥ÉîÃ«à®__»¨_¼±ÌdEøÊgWX^iMOSFETjÌ÷×»ªißçêÄ¢éBµ©µÈªçC]p¢çêÄ«½½» Si(poly­Si)/SiO2 Ì\¢ÅÍQ[gâÌúª 1 nm ÈºÉÈèCQ[gRêd¬ÌâèÉæÁÄ÷×»ÌÀEªwE³êéæ¤ÉÈÁ½B±Ì½ßC¢Ud¦ihigh­kjð
Â Ta2O5, SrTiO3, ZrO2, HfO2 ÈÇÌ_»¨Þ¿ð]ÌSiO2 Éu«·¦évZXJ­ªKvsÂÅéB»êçÌÞ¿ÌÅÍMIÀè«C¢Ud¦CL¢ohMbvðÂ ZrO2 â HfO2 Cé¢Í»ÌVP[gªÁÉL]³êCêÀp»³ênßÄ¢éBäXÍCúËõõdqªõÉæèC±Ìæ¤È high­k Þ¿ÌIðwjð¾é±ÆðÚIÆµCfoCXvZXÉtB[hobN·é½ßCohACgÌè@1,3,8)Cd×gbvðÍ@7,9) Chigh­k /VREÊ»w½ðFig. 1(color online) Overview of the UHV apparatus for angle­
resolved photoemission spectroscopy measurements. Thesample holder is moved to a suitable position for sample
transfer using an external XYZ stage. Polar and tilt rotationsof the sample are carried out using a dierentially­pumped­
rotary­feed through and a ip stage, respectively.

Í2,4_6)ðSÉ¤ðWJµÄ«½B³çÉC±±ÅßÌgsbNÆµÄCà®dÉÆ high­kqªõuÌTª}ð¦·BõdqªõAiCU[ÆµQ[gâEÊÌ[³ûüðÍÉÖ·é¤ðißÄ¢Ä VGScienta Ð SES2002ðp¢CGlM[ªð\ÍîéBà®dÉÍóRwª`¬³êÈ¢½ßC]Ì poly­X üÌæi400_800 eVjÅ100 meV ÈºðB¬µÄ¢éBSi Éä×ÄÀøIÈdCIeÊðåÅ«éÆ¢¤_AiCU[Íõ²ÉÎµÄ60ÌpxÅzuµÄ¨èCªpxªðf[^ðø¦Ç­æ¾·é½ßC2 ²«Ì}js

éBµ©µÈªçCà®/high­k _»¨Q[gX^bN\¢ÅÍh[pgs¨Ì«»Aj[Höðoé[^ðæèt¯½B}js

[^Ì¼²ÉÎ·éÆCµ«¢ld³ªÏ®µCÁïdÍÌåªN«ÄµÜûüiujÌñ]ÉÁ¦ÄCüËõÌ²ÉÁÄXÎ³¹¤Æ¢¤âèªc³êÄ¢é10,11) Bµ½ªÁÄCà®/éûüiqjÌñ]àÅ«C±êÉæèõÌüËûüðÎ

high­k _»¨Q[gX^bN\¢É¨¯éEÊ½JjüËðÉÛÁ½ÜÜpxªðªèªÂ\ÆÈéBFig. 2YÌð¾ªKvsÂÅ

ÉCu ñ]Æ q ñ]Å Au 4f àkõdq­xÌpxªzðèCMºÅ³fIðIÈ

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èú­ÈÁÄµÜ¤±ÆàÈãÌ´¢ÅÍCõdqÌEo[³Éä×Ä¿Ìvúª©È

pxªðõdqªõuÌ´x»Fig. 1 ÉGlM[Á¬í¤@\úËõ{ÝiKEK_PFjBL_2C r[CÉÄ§¿ã°½pxªðõdéÌÅCEÊßTÌîñðÚ

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126  úËõ March 2012 Vol.25 No.2
(C) 2012 The Japanese Society for Synchrotron Radiation ResearchFig. 23.

úËõj[X ¡ æ16ñú{úËõwï§ãÜóÜ¤ñFig. 3(color online) (a) In­depth prole of the 1.5­nm TiN/Hf­
SiON gate stack structures on Si substrates obtained fromangle­resolved core­level photoemission spectra. (b)Chemical­state­resolved in­depth proles for Ti, Hf, and Si
atoms are also presented.

Fig. 4(color online) In­depth proles for as­grown (a) and an­nealed (b) sample, which is obtained from the angle­
resolved core­level intensity as a function of ue. Insets show
data points and simulated curves in dots and solid lines,respectively.

(color online) Normalized intensity of Au 4f core­level spec­
tra from gold depending on emission angle. Inset shows
schematic pictures for polar (u) and tilt (q) angle scans withgeometries of incident photon and emitted photoelectron.

foCX\¢¿Ì[³ûüðÍà®dÉÞ¿ÆµÄCSi ÌGlM[MbvÌS
tßÉtF~ÊðÂ TiN ðIðµ½BTiN dÉÍhigh­k wÆÌEÊÉ LaOx â AlOx ð}ü·é±ÆÅC»
ê¼ê NMOS â PMOS pÉdÖð²®·é±ÆªÂ\ÅèCÜ½CÁH«ÌÏ_©çàL]ÈdÉÞ¿ÅéÆúÒ³êÄ¢éB¼±Ì»¢vZXðzèµ½à®dÉÍÏCAj[ÈÇð{µ½ãCpxªðõdqªõªèðsÁ½B¿ÆµÄ p ^ Si(100)îÂãÉHfSiO ð´qwÍÏ@ÉæèÍÏµC»ÌãvY}»ÉæèfðYÁµ½àÌðp¢½B±Ì¿ÌãÆÈéBFig. 4 ÉêáÆµÄCdÖð NMOS pÉ§

ÉC}OlgXpb^OÉæè1.5 nm Ì TiN àä·é½ßCTiN/HfSiO EÊÉ LaOx ð}üµ½¿Ì®dÉðÍÏµC¿ðõdqªõªè`o[ÜÅ^MOãÉ¨¯é[³ûüðÍÊð¦·BMOÅóðÛÁ½ÜÜÀµ½ãCTi 2p, Hf 4f, Si 2p, O 1s ¨æÍCLaOx ª TiN/HfSiO EÊtßÉÇÝµÄ¢élqCÑ N 1s àkÊXyNgÌõdqopxË¶«ðªMãÉÍ La ´qª high­k wðgUµCºn SiO2

èµ½BüËõÌGlM[Í hn800 eV ÉÝèµ½BEÊwiI.L.jÖBµÄ¢élqð¾É¨¦é±Æª³fZxªzÌðÍÊð Fig. 3(a)É¦·B»ê¼êÌwÅ«½BQ[gX^bNÌ La ´qÍÀødÖðáÌúâg¬àÙÚ¬ÌðÆêvµÄ¨èCTiN/Hf­º³¹é±Æªñ³êÄ¢éª10) C±êÍ I.L. ßTÖ

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128  úËõ March 2012 Vol.25 No.2

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