25th International Semiconductor Laser Conference (ISLC 2016)

Wednesday, September 14
All talks will be held in the Zuiten (East) room
8:15-10:15

Session: High Speed Lasers

Session Co-Chairs: Anders Larrson (Chalmers Univ. of Technology)
Paul Leisher (Rose Hulman Univ.)
8:15

WA1 (Invited) – "Direct Modulation Laser Technology toward 50-GHz Bandwidth"

Yasuhiro Matsui1, Richard Schatz2, Glen Carey1, Tsurugi Sudo1, Charles Roxlo1
1Finisar Corp., USA, 2Royal Institute of Technology, Sweden
A short cavity distributed reflector (DR) laser with a modulation bandwidth of 55GHz was developed
using the photon-photon resonance and detuned-loading effects. The importance of the chirpparameter for the speed enhancement is discussed.
8:45 tϮʹΗǆƚƌĞŵĞůǇ>ŽǁͲsŽůƚĂŐĞ;ϭ͘ϬsƉƉͿĂŶĚϮϴͲ'ďƉƐhŶĐŽŽůĞĚKƉĞƌĂƚŝŽŶƵƉƚŽϴϱȚŝŶϭ͘ϯͲʅŵ
EA/DFB Lasers with High-Quality Eye Opening"Nozomu Yasuhara, Syunya Yamauchi, Yoshihiro Tsunemi, Atsushi Nakamura, Yoriyoshi Yamaguchi,
Kazuhiko Naoe, Kazuhisa Uomi
Oclaro Japan, Inc., JapanKƉĞƌĂƚŝŽŶŽĨϭ͘ϯͲʅŵƵŶĐŽŽůĞĚϮϴͲ'ďƉƐͬ&ůĂƐĞƌƐĂƚƚŚĞůŽǁĞƐƚͲƐŽͲĨĂƌͲƌĞƉŽƌƚĞĚǀŽůƚĂŐĞǁĂƐ
demonstrated. To achieve high-quality waveforms, the MQW structure was optimized, and a novel EA
operation condition was proposed. Consequently, the lasers achieved high-quality eye openings withϭ͘ϬsƉƉƵƉƚŽϴϱȚ͘
9:00

tϯʹΗϭϮϬΣ͕Ϯϱ͘ϴͲ'ďƉƐKƉĞƌĂƚŝŽŶŽĨϭ͘ϯͲʅŵŝƌĞĐƚůǇDŽĚƵůĂƚĞĚ/Ŷ'ĂůƐͲDYt&>ĂƐĞƌƐΗ

Akira Nakanishi, Takayuki Nakajima, Noriko Sasada, Shigenori Hayakawa, Yasushi Sakuma,
Masaru Mukaikubo, Ryu Washino, Kazuhiko Naoe, Kouji Nakahara, Kazuhisa Uomi
Oclaro Japan, Inc., Japan,ŝŐŚͲƚĞŵƉĞƌĂƚƵƌĞϮϱ͘ϴͲ'ďƉƐĐůĞĂƌͲĞǇĞͲŽƉĞŶŝŶŐŽĨĂϭ͘ϯͲʅŵĚŝƌĞĐƚůǇŵŽĚƵůĂƚĞĚ/Ŷ'ĂůƐͲDYt
DFB laser with ACPM grating was demonstrated up to 120°C for the first time. Furthermore, the eye
openings showed high mask margins of more than 19% from 25 to 110°C.
9:15 WA4 – "42 nm Wide Coherent Frequency Comb Generated by a QW Based Integrated Passively
Mode-Locked Laser"
Valentina Moskalenko1, Kevin Williams1, Jeroen Koelemeij2, Erwin Bente1
Eindhoven Univ. of Technology, The Netherlands, 2Vrije Universiteit Amsterdam, The Netherlands

1

An experimental study of InP extended cavity passively mode-locked ring laser which generates
extra wide frequency comb is presented. The bandwidth of over 40nm at -20dB level is observed.
Confirmation of the coherence and measurements of the relative time delay across the comb ispresented.
9:30

WA5 – "1060 nm VCSEL for up to 40 Gbit/s Data Transmission"

Ewa Simpanen1, Johan S. Gustavsson1, Erik Haglund1, Emanuel Haglund1, Anders Larsson1,
Wayne Sorin2, Sagi Mathai2, Michael Tan2
1
Chalmers Univ. of Technology, Sweden, 2Hewlett Packard Enterprise, USA
A GaAs-based 1060 nm VCSEL with strained InGaAs/GaAsP QWs, doped DBRs, a short optical cavity,28

25th International Semiconductor Laser Conference (ISLC 2016)

and multiple oxide apertures is presented. Modulation up to 40 Gbit/s at 25°C and 30 Gbit/s at 85°C isdemonstrated.
9:45

WA6 – "Small-Signal Analysis of Ultra-High-Speed VCSELs"

Wissam Hamad, Stefan Wanckel, Werner Hofmann
Technical Univ. of Berlin, Germany
For ultra-high-performing VCSEL devices, a small-signal-modulation response with a shape differingfrom single-mode edge-emitting lasers is expected, especially if carrier reservoir splitting occurs. We
derive a novel function working for all VCSELs, particularly including our latest VCSEL generation with amodulation bandwidth up to 32.7GHz.
10:00 WA7 – "Femtosecond Superradiant Emission in Semiconductor Structures: Self-Ordering and
Coherent Population Gratings"
Peter P. Vasil'ev, Richard V. Penty, Ian H. White
Univ. of Cambridge, UK
An impact of transient population gratings on superradiant emission from semiconductor laser
structures is studied. Strong transient modulation of e-h density dramatically affects the superradiancemechanism in semiconductor media and is able to account for observations of superluminal pulse
propagation and anomalous second harmonic generation.

10:15-10:35 Coffee Break
10:35-11:50

Session: Nano Lasers

Session Co-Chairs: Yoshiaki Nakano (The Univ. of Tokyo)
Peter P. Vasil'ev (Univ. of Cambridge)
10:35 WB1 – "Experimental and Theoretical Investigations on the Nature of Spontaneous Emission toLasing Transition in Near-Unity Spontaneous Emission Factor Emitters"
Weng W. Chow1, S. Kreinberg2, C. Schneider3, S. Höfling3, M. Kamp3, S. Reitzenstein2
Sandia National Laboratories, USA, 2Technische Universität Berlin, Germany, 3Universität Würzburg,
Germany

1

We investigated lasing in high-b emitters, when the customarily-used intensity jump and linewidth
narrowing are no longer trustworthy. Spectrally-resolved photoluminscence and photon
autocorrelation are measured from micropillars containing quantum dots and analyzed using cavityQED. A physically intuitive lasing criterion applicable to all lasers is proposed.
10:50 WB2 – "Optical Antenna Enhanced Spontaneous Emission Rate in Electrically Injected
Nanoscale III-V LED"
Seth A. Fortuna1, Christopher Heidelberger2, Kevin Messer1, Kevin Han1, Eugene A. Fitzgerald2,
Eli Yablonovitch1, Ming C. Wu1
1
Univ. of California, Berkeley, USA, 2Massachusetts Institute of Technology, USA
We experimentally demonstrate greater than 100-fold enhancement of the spontaneous emission rate
in an electrically injected nanoscale III-V light emitting diode coupled to a cavity-backed slot antenna.
11:05 WB3 – "Nonlinear Dynamics and Enhanced Modulation Response in Optically Injected
AlGaInAs/InP Microdisk Laser"
Xiu-Wen Ma, Yong-Zhen Huang, Yue-De Yang, Jin-Long Xiao, Osamu Wada
Chinese Academy of Sciences, China
29

25th International Semiconductor Laser Conference (ISLC 2016)

Nonlinear dynamics and high speed modulation of an optically injected microdisk laser are investigatedexperimentally. Small signal modulation bandwidth is increased from the free-running value of 14.4
GHz to about 38 GHz and 50 GHz under the optical injection locking and period-one oscillation states,
respectively.
11:20 WB4 – "Nanoisland Bandedge Lasers"
Putu Eka Pramudita, Hoon Jang, Indra Karnadi, Yong-Hee Lee
KAIST, Republic of Korea
We propose and demonstrate nanoisland bandedge lasers. We employed selective quantum-well wetetching technique to create nanoisland array in between InP claddings of a prefabricated photonic
crystal structure. We observed reduction of laser threshold as we reduced the nanoisland’s sizes by
increasing the wet-etching time.
11:35 WB5 – "Sub-Wavelength Metallic Laser Coupled to Silicon-on-Insulator Waveguide with
Integrated Optical Feedback Stub for Q Factor Enhancement"
Kaiyin Feng, Chuanqing Yu, Masaya Nishimoto, Richard James Edward Taylor, Takuo Tanemura,
Yoshiaki Nakano
The Univ. of Tokyo, Japan
We propose a novel design of sub-wavelength metallic-cavity InP/InGaAs laser with unidirectional
output on a silicon-on-insulator waveguide. By engineering the length/shape of the integrated opticalfeedback stub, formed on non-output end of the waveguide, we improve the overall Q factor while
maintaining confinement factor.

11:50-12:50 Lunch (Lunch box is served)
12:50-15:00

Anniversary WS 3

Session Co-Chairs: Yuichi Tohmori (Tsurugi Photonics Foundation)
Kent Choquette (Univ. of Illinois)
13:00 AWS9 (Invited) – "Forty Years of ISLC: Laser Diode Materials, Growth, Structures, andPerformance"
James J. Coleman
Univ. of Texas at Dallas, USA
For more than forty years, from the 4th IEEE International Semiconductor Laser Conference in Atlanta
in 1974 to the 25th edition of the Laser Conference this year in Kobe, we have had the good fortune toparticipate in the flagship conference of what is now a major industry. We have attended many of theconferences and enjoyed visiting beautiful places all over the world. We have helped organize many of
the conferences and made lifelong friends in the process. And we have presented our work including
such topics as LPE visible InGaAsP lasers, laser arrays, strained layer lasers, and selectively grown buried
heterostructure lasers. In this anniversary workshop, we’ll describe a few of these technical topics andshare some stories about the people in our profession and the places we have visited.
13:30 AWS10 (Invited) – "Laser Diode Quantum Efficiency Revisited"Peter Blood
Cardiff Univ., UK
The quantum efficiency, in various manifestations, has been an important figure of merit and diagnostic
tool in the study of laser diodes from their earliest days, and the subject of controversy. The radiative
efficiency at threshold relates the intrinsic threshold current to the external current of a real device
3025th International Semiconductor Laser Conference (ISLC 2016)

but is very difficult to determine independently. The external differential quantum efficiency, from theslope of the light-current characteristic, influences the output of high power lasers and its dependence
upon cavity length has been used as a means to measure the internal optical mode loss.
The evolution of approaches to the interpretation of measurements of the external differential
efficiency and the relation between internal and external efficiencies will be reviewed and a consistent,
present-day analysis presented. The topic is intimately related to the onset of stimulated emission andFermi level pinning above threshold. This is of importance in quantum dot lasers and solution of rateequations for carriers on dot states coupled to the wetting layer by phonon interactions within a single
mode laser model will be presented to illustrate the contributions to the external differential efficiency
and the inaccuracies that can arise in the determination of optical mode loss.
14:00 AWS11 (Invited) – "Thirty-Five Years of Widely-Tunable Single-Chip Lasers: A Pathway to Active PICs"
Larry A. Coldren
Univ. of California, Santa Barbara, USA
Work on monolithic tunable diode lasers began in the late 1970’s and some results were being
reported by a couple of groups in the early 1980’s. Both coupled-cavity designs that used Verniertuning and tunable 2 and 3-section DBR lasers were explored. By the end of this decade theseconcepts were combined into a 4-section ‘differing multi-element mirror laser,’ which a bit later was
realized as the sampled-grating DBR (SGDBR) laser capable of providing outputs over 40 nm near 1550
nm. This laser used the Vernier tuning concept with different periodically blanked DBRs to provide
more than a half dozen bands of tuning, each 6-7 nm in width, characteristic of DBR lasers. As suchlasers involved the integration of active and passive sections with partially transmissive mirrors, theynaturally provided the building blocks for more complex photonic integrated circuits, such as ones that
integrated lasers with SOAs, modulators and photodiodes.
During the 1990’s, as WDM communications evolved, many other monolithic widely-tunable designs
also emerged and evolved. Some were similar in concept to the SGDBR, some used arrays of DFB
lasers with combiners or selectors, others used widely-tunable filters, such as integrated co-directional
couplers, and still others used integrated MEMs mirrors on VCSELs. By the time of the 2000-era Techbubble, several became the basis of start-up companies. Today, the differing multi-element mirror
concept remains one of the most popular for single-chip widely-tunable lasers.
14:30 AWS12 (Invited) – "Dynamic Single Mode Laser Saw the Light of Day"
Yasuharu Suematsu
Tokyo Institute of Technology, Japan
Dynamic Single Mode (DSM) lasers were specified by characteristic features of i) operating wavelength
at the lowest loss band of silica fiber, namely 1.5µm, ii) stable single mode operation, and iii) tunablewavelength. First demonstration of thermos-tunable DSM laser at wave length of 1.5µm band wasmade in 1980. Presently, thermo-tunable DSM laser consisted with a single mode resonator of two
distributed reflectors connected by spacing of odd number multiple of a quarter wavelength, so
called as phase shift DFB laser, were commonly used for most of the long distance systems, after first
demonstrated in 1983 and commercial use in 1992. This phase shift DFB laser was specific by high yieldof production because of the fact that the single mode resonator, as proposed in 1974, could be built in
during the photoresist stage of production.
Electro-tunable DSM laser, called as wavelength tunable laser was proposed in 1980 and demonstrated
in 1983. The tunable wavelength range was significantly extended by use of distributed reflector withmultiple grating pitches and commercialized in the early 2000’s by those who involved.

15:00-15:20 Coffee Break31

25th International Semiconductor Laser Conference (ISLC 2016)

15:20-16:20

Session: High Power Lasers

Session Co-Chairs: Noriyuki Yokouchi (Furukawa Electric Co., Ltd.)
Manoj Kanskar (nLIGHT, Inc.)
15:20 WD1 – "Assessing the Impact of Thermal Barriers on the Thermal Lens Shape in High Power
Broad Area Diode Lasers"
J. Rieprich1, Martin Winterfeldt1, Jens Tomm2, Paul Crump1
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany, 2Max-Born-Institut für
Nichtlineare Optik und Kurzzeitspektroskopie, Germany1DĞĂƐƵƌĞĚƚŚĞƌŵĂůƉƌŽĨŝůĞƐŽŶ'ĂƐďƌŽĂĚĂƌĞĂĚŝŽĚĞůĂƐĞƌƐ;WŽƉƚхϭϬt͕ʄсϵϭϬŶŵͿǁĞƌĞƌĞƉƌŽĚƵĐĞĚin FEM simulation, indicating an unforeseen thermal barrier between laser chip and metallization.
An investigation of that barrier potentially yields design- and packaging improvements for increased
radiance, since thermal lensing strongly determines in-plane beam quality.
15:35 WD2 – "Watt-Class 1550 nm Tapered Lasers with 45% Wallplug Efficiency for Free-Space OpticalCommunication"
Paul O. Leisher1, Jeremy Thomas2, Jenna Campbell2, Isabella Gonzalez2, Daniel Renner2, Leif Johansson2,
Milan Mashanovitch2
1
Rose-Hulman Institute of Technology, USA, 2Freedom Photonics, LLC, USA
We report on the development of tapered diode lasers based on the InGaAsP material system andoperating around 1550 nm for free-space optical communication. By combining a high efficiency
epitaxial design with an innovative tapered amplifiers, a record 45% power wallplug efficiency isachieved with a maximum output >1 watt.
15:50 WD3 – "1180nm DBR-Ridge Waveguide Lasers with Strain Compensation Layers in the Active
Region for Lifetime Improvement"
Katrin Paschke, Gunnar Blume, Arnim Ginolas, Julian Hofmann, David Feise, Wilfred John, Nils Werner,
Frank Bugge
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany
DBR ridge waveguide lasers at 1180nm were developed based on strained InGaAs quantum wells. The
lasers feature a lifetime of more than 1000h at 100mW and are believed to be a key component forminiaturized SHG laser modules emitting in the yellow spectral range.
16:05 WD4 – "Studies of Limitations to Peak Power and Efficiency in Diode Lasers Using ExtremeDouble-Asymmetric Vertical Designs"
Thorben Kaul, Götz Erbert, René Platz, Andre Maaßdorf, Steffen Knigge, Paul Crump
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany
High power diode lasers with extreme-double-asymmetric epitaxial designs with increased
confinement in the well Ƚ achieve high efficiency (50%) and powers (14W) at high heatsink
temperature (75°C), attributed to the suppression of power saturation mechanisms. Prospects forincreased performance via further increased Ƚ are analyzed.

32

25th International Semiconductor Laser Conference (ISLC 2016)

All talks will be held in the Ginga room
16:20-18:20

Poster Session & Coffee Break

1. Mid Infrared Lasers
WE2 – "Molecular Beam Epitaxial Growth of 3µm Mid-Wave Infrared Laser Using InGaAsSb/AlInAsSb
Quantum Well Structure"
Chunte Lu, Ron Kaspi, Tim Newell, Chi Yang, Sanh Luong, Don Gianardi
Air Force Research Laboratory, USA
We report experimental results of growth and characterization of InGaAsSb/AlInAsSb quantum welllaser structure. The epitaxial structure was grown using molecular beam epitaxy system on GaSb
substrate and characterized using a 2µm pump source. We observed 3.1µm laser emission at 200K and
2.98µm laser emission near 100K.

2. Silicon Photonics
WE3 – "Instability of Silicon Photonic Wavelength Tunable Laser Diodes due to the Nonlinear Optical
Effect of Silicon"
Tomohiro Kita, Hirohito Yamada
Tohoku Univ., JapanThe silicon photonic wavelength tunable laser diode is a good candidate for the integrated light source.
However, optical nonlinear effects easily occur due to the strong light confinement of Si photonic wire
waveguides. The impact on laser operation caused by nonlinearity was discussed.
WE4 – "Hybrid Microlasers with Stable Unidirectional Emission from a Silicon Waveguide"
Shao-Shuai Sui, Yong-Zhen Huang, Ming-Ying Tang, Hai-Zhong Weng, Yue-De Yang, Jin-Long Xiao
Chinese Academy of Sciences, China
Hybrid microlasers are fabricated using wafer bonding technique. Microring laser has random
competition between the travelling modes, in contrast, spiral-ring and locally deformed ring
microlasers, respectively, maintain one major direction and totally unidirectional stable emission froma silicon waveguide.

3. VCSELs
WE5 – "Vertical Cavity Surface Emitting Lasers with Precise Multi-Wavelength Control"
Ryoichiro Suzuki, Hiroshi Motomura, Shunichi SatohRICOH Company, Ltd., Japan
We fabricated multi-wavelength VCSELs with semiconductor wavelength tuning layer (WTL) by
employing a selective wet etching for varying WTL thickness. It is presented that, by inserting DBR pairs
between WTL and cavity, WTL thickness can be increased to some feasible extent in typical epitaxial
growth.
WE6 – "Polarization Switching and Injection Locking in 1550nm VCSELs Subject to Parallel Optical
Injection"

33

25th International Semiconductor Laser Conference (ISLC 2016)

Ana Quirce1, Pablo Perez2, Alexandra Popp2, Florian Denis-le Coarer3, Angel Valle2, Luis Pesquera2,
Yanhua Hong4, Hugo Thienpont1, Krassimir Panajotov1, Marc Sciamanna3
1
Vrije Universiteit Brussel, Belgium, 2Instituto de Fisica de Cantabria (CSIC-UC), Spain, 3CentraleSupélecand Univ. of Lorraine, France, 4Bangor Univ., UK
Polarization switching in a long-wavelength VCSEL under parallel optical injection is analyzed in atheoretical and experimental way. We report a novel state in which injection locking of the parallel
polarization and excitation of the free-running orthogonal polarization of the VCSEL are simultaneously
obtained.
WE7 – "External Mirror with Steep Reflection Phase Spectrum by Guided-Mode Resonance for ShortCavity VECSEL"
Katsuaki Yamada1, Kosuke Asai1, Yeong Hwan Ko2, Kenji Kintaka3, Kyu Jin Lee2, Junichi Inoue1,
Shogo Ura1, Robert Magnusson2
1
Kyoto Institute of Technology, Japan, 2Univ. of Texas at Arlington, USA, 3National Institute of Advanced
Industrial Science and Technology, Japan
A guided-mode resonance filter on a high reflectance substrate was studied to be an external mirrorof short-cavity vertical-external-cavity surface-emitting laser. Feasibility of high reflectance with steep
reflection phase spectrum is one of key issues and was demonstrated for the first time.
WE8 – "Design of High Speed (> 30 GHz) 850 nm Vertical-Cavity Surface-Emitting Lasers by Efficient
Theoretical Simulation Method"
Dan-Hua Hsieh1, Michael Liu2, Chao-Hsin Wu3, Jian-Jang Huang3, Gong-Ru Lin3, Tien-Tsorng Shih4,
Wood-Hi Cheng5, Milton Feng2, Hao-Chung Kuo1
1
National Chiao Tung Univ., Taiwan, 2Univ. of Illinois, USA, 3National Taiwan Univ., Taiwan, 4National
Kaohsiung Univ. of Applied Sciences, Taiwan, 5National Chung Hsing Univ., Taiwan
Comprehensive numerical simulation is conducted for design of high speed 850 nm VCSEL, the effectsof strained InGaAs/AlGaAs MQW along with multi-oxide layers are investigated. The simulated results
show great agreement with the experimental performance, and the highest 3dB bandwidth of 30 GHz
is achieved.
WE9 – "Temperature Characteristics of Photo Detector Integrated Transverse-Coupled-Cavity VCSELs"
Naoki Jogan1, Junichiro Hayakawa1, Takashi Kondo1, Akemi Murakami1, Jun Sakurai1, Xiaodong Gu2,
Fumio Koyama2
1
Fuji Xerox Co., Ltd., Japan, 2Tokyo Institute of Technology, JapanWe demonstrate an ultra-compact photo-detector integrated VCSEL with laterally coupled two
cavities. Output power and photo current show a similar tendency under wide temperature changes.
The device could be used for monitoring the output power without a conventional photo detector
mounted separately.
WE10 – "Optical Modulation of Lateral-Feeding-Designed Vertical Cavity Transistor Lasers"
Cheng-Han Wu, Yun-Hsuan Chang, Chao-Hsin Wu
National Taiwan Univ., Taiwan
We demonstrate the dual-output characteristics of the vertical cavity transistor laser with an electrical
output and an optical output at 80K. Above the threshold current, the lasing wavelength is 971.7nm.
The optical modulation bandwidth of 2.7 and 5GHz are obtained for current and voltage modulation.
WE11 – "Wafer fused Long-Wavelength VCSELs for Analog Photonics Applications"
Mikhail E. Belkin1, Vladimir Iakovlev2
1
Moscow State Technological Univ. (MIREA), Russia, 2RTI Research S.A., Switzerland
34

25th International Semiconductor Laser Conference (ISLC 2016)

The comparison of spectral, noise and linear characteristics of long wavelength (LW) wafer fused (WF)
vertical surface emitting lasers (VCSEL) and short wavelength VCSELs indicates clear advantages of LW
WF VCSEL for further progress in information and communication industry technology, in particular for
analog applications.
WE12 – "Aspects of Direct Modulation of VCSELs"
Stewart Fryslie, Andrew Netherton, Nicholas DeNardo, Harshil Dave, Katherine Lakomy, Kent Choquette
Univ. of Illinois, USA
We compare the small signal response of 850nm oxide-confined and photonic crystal VCSELs, and showthat a high bias current to threshold current ratio does not predict high bandwidth in photonic crystal
VCSELs. Issued associated with increasing propagation distance for increased bandwidth-distanceproduct are discussed.

4. High Power Lasers
WE13 – "Jet Impingement Cooling for Reliable High Efficiency Operation of 980 nm Diode Pumps at
Elevated Temperatures"
Jenna Campbell1, Paul Leisher2, Tadej Semenic3, Avijit Bhunia3, Milan Mashanovitch1, Daniel Renner1
1
Freedom Photonics, LLC, USA, 2Rose-Hulman Institute of Technology, USA, 3Teledyne Scientific Co., USA
We report on the development of 980nm diode lasers operating with high efficiency and which show
little change in performance as the liquid coolant temperature increases from 20 to 50 °C. These results
are enabled by the application of a novel jet impingement cooling approach.
WE14 – "High Power Semiconductor Laser Arrays at 1120 nm"
Alexander Albrecht Reinhold1, Marc Fischer1, Wolfgang Zeller1, Johannes Koeth1, Martin Kamp2
1nanoplus Nanosystems and Technologies GmbH, Germany, 2Universität Würzburg, Germany
Semiconductor laser arrays with a distinct number of ridge waveguides within a parallel geometry havebeen fabricated. Evanescently coupled supermodes with out-of-phase and in-phase characteristics areƌĞǀĞĂůĞĚďǇƌĞƐƉĞĐƚŝǀĞŵƵůƚŝͲĂŶĚƐŝŶŐůĞͲůŽďĞĚĨĂƌĨŝĞůĚĞŵŝƐƐŝŽŶ͘KƵƚƉƵƚƉŽǁĞƌƐŽĨWсϰϬϬŵtŚĂǀĞďĞĞŶŵĞĂƐƵƌĞĚĂƚdсϭϬΣ͘
WE15 – "Internal Optical Loss in GaAs- and InP- Based Semiconductor Lasers"
Nikita A. Pikhtin, Dmitry A. Veselov, Zinaida N. Sokolova, Sergey O. Slipchenko, Ilya S. Tarasov
Ioffe Institute, Russia
High power semiconductor lasers developed in Ioffe Institute on the base of MOCVD-grownasymmetric separate confinement double heterostructures with broadened waveguide will be
discussed. Investigation results of internal optical loss and output characteristics of devices emitting in
800-1100nm and 1300-1600nm wavelength ranges will be presented.
WE16 – "Flared Oscillator Waveguide Diodes (FLOW-Diodes) Enable High Brightness Fiber-coupled
Modules"
Manoj Kanskar, Ling Bao, Zhigang Chen, Dave Dawson, Marty Hemmenway
nLIGHT, Inc., USA
Broad-area lasers having narrower rear-facet width compared to front-facet have been fabricated toachieve suppression of higher order mode in the lateral direction. Consequently, slow-axis-divergencehas been reduced by over two-times at current density >3kA/cm2 making possible fiber-coupled power>200 W from 105µm -and-0.15NA beam.

35

25th International Semiconductor Laser Conference (ISLC 2016)

WE17 – "80-GHz 1.55 mum Colliding-Pulse Mode-Locked Laser with High Pulse Power"
Pengchao Zhao, Anjin Liu, W. Zheng
Chinese Academy of Sciences, China
tĞĚĞŵŽŶƐƚƌĂƚĞĂŶů'Ă/ŶƐͬ/ŶWϭ͘ϱϱʅŵϴϬ',ǌĐŽůůŝĚŝŶŐͲƉƵůƐĞŵŽĚĞͲůŽĐŬĞĚůĂƐĞƌ͘dŚĞĚĞǀŝĐĞ
generates pulses of 1.75 ps, with pulse energy of 0.33 pJ, and a time-bandwidth product of 0.51. With along saturable absorber, we achieve two-fold improvement in pulse energy and peak power.
WE18 – "Dynamic Characterization of Output Power Fluctuations in FBG Stabilized 14xx-nm GaInAsP/
InP Laser Modules"
Takuya Kokawa, Junji Yoshida, Noriyuki Yokouchi
Furukawa Electric Co., Ltd., Japan
Output power stability of 14xx-nm GaInAsP/InP laser module with fiber Bragg gratings (FBGs) was
dynamically evaluated. Power fluctuations accompanied by wavelength jumps to gain peak wereobserved by single-FBG configuration. By contrast, double-FBGs configuration having same coherent
reflectivity as the single-FBG showed stable output power.

5. High Speed Lasers
WE19 – "Enhanced Dynamic Response and Spectral Characteristics Improvement of Optically-Injected
Widely-Tunable Laser Diodes"
Onur Duzgol, Georgios Kyritsis, Nick Zakhleniuk
Univ. of Essex, UK
Using travelling-wave model we demonstrate strong interplay between tuning and modulation
performance of widely-tunable laser diodes (TLDs). Small- and large-signal dynamics of a free-runningand optically-injection-locked TLD is investigated. Large TLD modulation speed enhancement andspectral characteristics improvement are obtained.
WE21 – "Highly Residual Facet Reflection Immune Electro-absorption Modulated Laser with Short
Partially Corrugated Gratings"
Puspa Devi Pukhrambam, San-Liang Lee
National Taiwan Univ. of Science and Technology, Taiwan
EMLs with short partial-corrugated-grating (PCG) DFB section are designed to have good single-modeǇŝĞůĚĂŶĚŝŵŵƵŶĞƚŽƌĞƐŝĚƵĂůĨĂĐĞƚƌĞĨůĞĐƚŝŽŶ͘tŝƚŚϭϱϬʅŵůŽŶŐW'ŽĨϮϬϬʅŵůĂƐĞƌƐĞĐƚŝŽŶ͕ƚŚĞ
EML can have >60% single-mode yield and maintain excellent signal quality even with 10-2 residualreflection.
WE22 – "The Analysis of Cost Effective TO-CAN Packaged 25.78 Gb/s Directly Modulated Laser"
Mizuki Shirao, Seiki Nakamura, Masaaki Shimada, Masamichi Nogami
Mitsubishi Electric Corporation, Japan
We report both numerical and experimental analysis of TO-CAN packaged 25.78Gb/s DML.
Developed TO-CAN packaged 25.78Gb/s DML is successfully operated with excellent mask-margin of
better than 26% against 100GBASE-LR4 mask over temperature for the first time. The TO-CAN packaged
DML has ability for cost sensitive applications.
WE23 – "Tailoring of Semiconductor Laser’s Frequency Response by Hybrid Modulation Scheme"
Shigeru Mieda1, Ryuto Isshiki1, Nobuhide Yokota1, Wataru Kobayashi2, Hiroshi Yasaka1
1
Tohoku Univ., Japan, 2NTT Corporation, Japan

36

25th International Semiconductor Laser Conference (ISLC 2016)

Frequency response control of semiconductor lasers is achieved by introducing a hybrid modulation
scheme. A flat response with low modulation sensitivity degradation at a high-frequency region isachieved by optimizing modulation ratio and time delay between direct current modulation and intracavity loss modulation signals.
tϮϰʹΗϵϬ'ďͬƐ,ǇďƌŝĚ/ŶƚĞŐƌĂƚĞĚWŚŽƚŽƌĞĐĞŝǀĞƌDŽĚƵůĞǁŝƚŚ,ŝŐŚ^ƉĞĞĚϭ͘ϱʅŵͲĂŶĚYͲ^KΗ
Atsushi Matsumoto1, Toshimasa Umezawa1, Kouichi Akahane1, Atsushi Kanno1, Naokatsu Yamamoto1,
Tetsuya Kawanishi2
1
National Institute of Information and Communications Technology, Japan, 2Waseda Univ., JapantĞŝŶǀĞƐƚŝŐĂƚĞĚĐŚĂƌĂĐƚĞƌŝƐƚŝĐƐŽĨŚǇďƌŝĚŝŶƚĞŐƌĂƚĞĚƉŚŽƚŽƌĞĐĞŝǀĞƌǁŝƚŚϭ͘ϱʅŵͲďĂŶĚƋƵĂŶƚƵŵĚŽƚ
semiconductor optical amplifier (QD-SOA) and conventional pin-photodiode (pin-PD) as a first stage.
The results indicated the photoreceiver integrated with QD-SOA and QD-PD has the potential to be
operated for signals over 100 Gb/s.

6. Waveguides & Resonators
WE25 – "Rate-Equation Analysis for an Integrated Coupled-Cavity Laser with Multi-Mode Interference
Anti-Phase Coupler"
Daan Lenstra
Eindhoven Univ. of Technology, The Netherlands
A rate-equation theory is derived for a laser consisting of two Fabry-Pérot cavities coupled via
self-imaging in a multi-mode interference reflector. Stable single-mode anti-phase operation isdemonstrated and locking ranges are calculated. The shapes of output-intensity curves agree well withmeasured curves.
WE26 – "Dual Output Tunable Laser Diode for Simultaneous Optical Transmission and Detection"
Mitsunobu Gotoda, Masakazu Takabayashi, Yuichiro Horiguchi, Keisuke Matsumoto, Eitaro Ishimura
Mitsubishi Electric Corporation, JapanWe demonstrate a novel tunable distributed feedback laser diode (DFB-LD) array with dual output of
13 dBm and 10 dBm, which can be used as full L-band light source for an optical transmitter and a local
oscillator simultaneously in a coherent optical communication system.
WE27 – "Coupling Efficiency Improvement between Thickness-Tapered SSC-FP-LD and Horizontally
Tapered SSC Si Waveguide"
Koji Nakamura, Yoshiaki Morino, Satoshi Miyamura, Daisuke Shimura, Hiroyuki Takahashi,
Yosuke Onawa, Hiroki Yaegashi, Hironori Sasaki
Oki Electric Industry Co., Ltd., JapanWe developed a Fabry-Perot-laser (FP-LD) with a Spot-Size-Converter (SSC) and experimentally
evaluated the coupling-efficiency between the SSC-FP-LD and a Si-waveguide with a horizontally
tapered SSC. Although the addition of SSC structure in FP-LD led to the absorption loss of 0.92dB,
overall coupling-efficiency was improved by 1.15dB.
WE29 – "Square Microcavity Lasers Exhibiting Dual-Transverse-Mode Lasing with Controllable
Wavelength Interval"
Yue-De Yang1, Hai-Zhong Weng1, Jin-Long Xiao1, Osamu Wada2, Yong-Zhen Huang11
Chinese Academy of Sciences, China, 2Kobe Univ., Japan
Square microcavity lasers enabling stable, controllable dual-transverse-mode operation areĚĞŵŽŶƐƚƌĂƚĞĚ͘ƐƋƵĂƌĞŵŝĐƌŽůĂƐĞƌǁŝƚŚϯϬʅŵƐŝĚĞͲůĞŶŐƚŚƐŚŽǁĞĚƚŚĞǁĂǀĞůĞŶŐƚŚŝŶƚĞƌǀĂůŽĨϬ͘ϮϱͲϬ͘ϯϵ
37

25th International Semiconductor Laser Conference (ISLC 2016)Ŷŵ͘ǇĚĞĐƌĞĂƐŝŶŐƚŚĞĐĂǀŝƚǇƐŝǌĞƚŽϭϲʅŵĂŶĚƌĞƉůĂĐŝŶŐĨůĂƚƐŝĚĞǁĂůůƐǁŝƚŚĐŝƌĐƵůĂƌĂƌĐƐ͕ƚŚĞǁĂǀĞůĞŶŐƚŚinterval range extended up to 7.6nm.
WE30 – "Lateral Mode Interference Observation in Emission Spectrum on Mode Selective activeMultimode Interferometer Laser Diode"Bingzhou Hong, Takuya Kitano, Haisong Jiang , Kiichi Hamamoto
Kyushu Univ., JapanWe newly showed lateral mode interference in the emission spectrum between 0th and 1st ordermodes on mode selective active multi-mode-interference laser diode that leads to single wavelengthĞŵŝƐƐŝŽŶ;^D^ZсϮϱĚͿ͘
WE31 – "Does the Reciprocity Principle Imply the Lifetimes of Counterpropagating Modes in WhistleGeometry Ring Lasers Should Be Equal?"
Hemashilpa Kalagara, Gennady A Smolyakov, Marek Osinski
Univ. of New Mexico, USA
A key feature of whistle-geometry semiconductor ring lasers is the asymmetry between
counterpropagating modes, which might be misconstrued as a violation of the Helmholtz reciprocity
principle and the time-reversal symmetry of Maxwell’s equations. We confirm unidirectionality ofwhistle-geometry configuration through rigorous three-dimensional finite-difference time-domain
simulation.
WE32 – "Enhanced Coupling Strength Grating Out-Couplers in III-V Waveguides"
Gary A. Evans1, Jerome Butler1, Rue-Hua He1, Jay Kirk1, Jin Yao2, Xuezhe Zheng2, Ashok Krishnamoorthy2
1
Southern Methodist Univ., USA, 2Oracle, USA
A low-index liner layer and a high-index cover layer over a surface grating in a III-V waveguide increases
the outcoupling efficiency by an orders of magnitude. The liner and cover layer reduces losses between
waveguide components such as distributed feedback (DBR) or grating out-coupler region.
WE33 – "Rate Equation Analysis of Strongly Injection-Locked Cascaded Semiconductor Ring Lasers with
Modulated Master Laser"
Fei-Hung Chu, Gennady A. Smolyakov, Marek Osinski
Univ. of New Mexico, USA
A novel method for modulation bandwidth enhancement is presented, involving strongly injectionlocked cascaded whistle-geometry semiconductor ring lasers. Advantages of direct modulation of themaster laser are revealed through numerical modeling.

7. Single Mode Lasers
WE34 – "Power and Wavelength Tuning Performance of Multi-Quantum-Well and Bulk Tunable Laser
Diodes and Main Limiting Factors"
Georgios Kyritsis, Onur Duzgol, Nick Zakhleniuk
Univ. of Essex, UK
Performance of multi-quantum-well and bulk tunable laser diodes are investigated. It is shown that therelaxation broadening in laser active section and the intervalence band absorption in passive sections
are the major limiting factors that define the output power and the achievable wavelength tuning
range.
WE35 – "A Tunable Dual-Mode Operation with Three-Section Distributed Bragg Reflector Lasers"
38

25th International Semiconductor Laser Conference (ISLC 2016)

Cheng Li1, Hang Zhao1, Yao Zhu1, Yu Han2, Yonglin Yu1
Huazhong Univ. of Science and Technology, China, 2Wuhan Huagong Genuine Optics Tech Co., Ltd (HG
Genuine), China
1

A tunable dual-mode operation with three-section distributed Bragg reflector (DBR) laser is proposedfor compact and low-cost microwave generation. Stable dual-mode operation with 7 nm tuning range isdemonstrated.
WE36 – "The Microwave Signal Linewidth in a Monolithically Integrated Two-Section DFB Laser underControllable Feedback"Yao-Zhong Dong, Fu-Chun Hsiao, Yi-Chia Huang, Chien-Chung Lin
National Chiao Tung Univ., Taiwan
A controllable optical feedback system was set up to investigate the linewidth of the RF signals
generated by a two-section DFB laser. A very narrow line (its width less than 100 kHz) can be detected
when both sections are under the influence of optical feedback.
WE37 – "Suppression of Relative Intensity Noise in Mutually Injection Locked DFB Laser Diodes"
Bing Xiong, Xu Ke, Yi Luo, Changzheng Sun, Jian Wang, Zhibiao Hao, Yanjun Han, Lai Wang, Hongtao Li
Tsinghua Univ., China
Relative intensity noise (RIN) characteristics of mutually injection locked distributed feedback (DFB)
laser diodes is investigated. RIN around the relaxation oscillation frequency in both lasers is found to be
simultaneously suppressed in the mutual locking status.
WE38 – "Sub-millisecond Wavelength Switching of Tunable DFB Laser Array (TLA) with Injection Current
Control"
Kenta Yamaguchi, Yudai Tatsumoto, Ryoga Kimura, Takeshi Kuboki, Kazutoshi Kato
Kyushu Univ., JapanFor the purpose of sub-millisecond wavelength switching, the feedforward-current control technique
was applied to the DFB laser. At the switching from 191.2 THz to 191.0 THz, our designed controller
successfully reduced the wavelength switching time of the tunable DFB laser array down to 800 µs.
WE39 – "Electrically Pumped Quantum Dot Surface Emitting Lasers with Bragg Grating Capped by ITO
Cladding Layers"
Kuo-Bin Hong, Ting-Yuan Chang, Chien-Hung Pan, Chien-Hung Lin, Gray Lin, Chien-Ping Lee,
Tien-Chang Lu
National Chiao Tung Univ., Taiwan
QD based Bragg gratings surface emitting lasers using ITO as transparent cladding layers were
demonstrated. Measured lasing peak locates at 1298nm and threshold current density of 210 A/cm2.
The laser shows extremely small divergence surface-emitted beam and thermal redshift of 0.08 nm/K
in peak wavelength.
WE40 – "Optimization of Power Spectral Density and Polarization Compensation for CoherenceSelectable ECDL"
Masaharu Hyodo1, Akira Kawakami2, Shingo Saito2, Masayoshi Watanabe3, Takahiro Kubo4,
Masaaki Adachi4
1Kanazawa Univ., Japan, 2National Institute of Information and Communications Technology, Japan,
3
The Univ. of Electro-Communications, Japan, 4Kanazawa Univ., Japan
Optical power-spectral density of an ECDL under coherence-selectable operation was optimized. The
laser had an intracavity half-wave plate that rotates the polarization with regard to the grating forachieving the operation. It was also shown that the resultant variation in polarization can be readily
39

25th International Semiconductor Laser Conference (ISLC 2016)

compensated.
WE41 – "GaAsP Quantum Well Tunable Single-Mode Laser with Periodically Slotted Structure"
Masahiro Uemukai, Takashi Furusawa
Osaka Univ., Japan
Tunable single-mode lasers with slotted structure were fabricated by simple process without highresolution lithography and regrowth. By changing injection currents to the active and slotted channels
discretely, wavelength tuning range of 2.6 nm was achieved with side-mode suppression ratio higher
than 25 dB.

8. Quantum Dot Lasers
WE43 – "Strain Balancing of MOVPE InAs/GaAs Quantum Dots Using GaAs0.8P0.2"
Timothy Stephen Roberts1, Benjamin Stevens1, Edmund Clarke1, Ian Tooley1, Jonathan Orchard1,
Ian Farrer1, David Childs2, Nasser Babazadeh2, Nobuhiko Ozaki3, David Mowbray1, Richard Hogg2
1
The Univ. of Sheffield, UK, 2Univ. of Glasgow, UK, 3Wakayama Univ., Japan
MOVPE growth of stacked InAs/GaAs QDs with and without GaAs0.8P0.2 strain balancing layers
has been studied. The GaAsP layers reduce the accumulated strain whilst maintaining the electricalcharacteristics. This should enable closer stacking of QD layers leading to higher gain and improved
laser performance.
WE45 – "Dominant Role of Many-Body Effects on the Carrier Distribution Function of Quantum Dot
Lasers"Negin Peyvast1, Kejia Zhou1, Richard Hogg2, David Childs2
1
The Univ. of Sheffield, UK, 2The Univ. of Glasgow, UK
The effects of quantum dot (QD) ensemble inhomogeneity, free-carrier-induced energy shift andhomogeneous broadening on the carrier distribution function are studied. We show that the dominantfactors determining the carrier distribution function are the free carrier effects and not the choice ofcarrier statistics.
WE46 – "High Characteristic Temperature for Ridge-waveguide Laser with a Highly Stacked InAs
Quantum Dot Structure"
Kouichi Akahane1, Atsushi Matsumoto1, Toshimasa Umezawa1, Naokatsu Yamamoto1,
Tetsuya Kawanishi2
1
National Institute of Information and Communications Technology, Japan, 2Waseda Univ., Japan
A ridge-waveguide laser with highly stacked InAs QDs based on strain compensation technique wasfabricated. The threshold current of this laser was decreased to approximately 75 mA without coating
the facet mirror. A high characteristic temperature of over 100 K was obtained in this laser.

9. Photonic Crystals & Nanolasers
WE48 – "Two-State-Lasing in InAs/InGaAsP/InP Quantum Dot Microcylinder Lasers"
Jin-Long Xiao1, Zhi-Xiong Xiao1, Yue-De Yang1, Shuai Luo1, Hai-Ming Ji1, Tao Yang1, Osamu Wada2,
Yong-Zhen Huang11
Chinese Academy of Sciences, China, 2Chinese Academy of Sciences and CREATE, Kobe Univ., China
InAs/InGaAsP/InP quantum dot microcylinder lasers connected with an output waveguide have been
designed and fabricated. Stable, single mode lasing at two remote wavelengths corresponding to the40

25th International Semiconductor Laser Conference (ISLC 2016)

ground and excited states of quantum dots has been demonstrated.
WE49 – "High-Operation-Temperature Aluminum-Based SPP Nanolasers"
Yu Hsun Chou1, Kuo-Bin Hong1, Bo-Tsun Chou1, Yen-Mo Wu1, Jheng-Hong Shih2, Yi-Cheng Chung2,
Peng-Yu Chen1, Tzy-Rong Lin2, Sheng-Di Lin1, Tien-Chang Lu1
1
National Chiao Tung Univ., Taiwan, 2National Taiwan Ocean Univ., Taiwan
Metal-insulator-semiconductor structures has widely adopted in plasmonics lasers. However, we foundthat the insulator is not necessary if permittivity combination of laser structures is properly designed.
Single-mode laser operation was demonstrate in devices without artificial insulator layers. Moreover,
the operation temperature can achieve 353 K.
WE50 – "Photonic Crystal Laser with Low-Quality Factor"
Yifan Xiong, Xiuyu Zhang, Elbert He, Ryo Tezuka, Takafumi Hino, Satoshi Kasamatsu, Masato Morifuji,
Hirotake Kajii, Masahiko Kondow
Osaka Univ., Japan
To investigate the optimum Quality factor for the photonic crystal laser, we fabricated and evaluated a
photonic crystal laser with low Quality factor around 1000. Lasing linewidth is almost constant at 2.3
nm above the threshold. So, the laser is not a coherent light source.
WE51 – "Purcell Effect in the Gain and Spontaneous Emission of Nanolasers"
Bruno Romeira, Andrea Fiore
Eindhoven Univ. of Technology, The Netherlands
The Purcell effect strongly affects the emission in laser nanocavities. We investigate its role in the gain
and spontaneous emission rate of nanopillar lasers over a wide range of cavity dimensions and emitter/
cavity relative linewidths enabling the modeling of either nano-, meso- or macro-scale lasers.
WE52 – "High Power and Low Divergence Tapered Lasers with Photonic Crystal Structure"
Xiaolong Ma, Yun Liu, Pengchao Zhao, Wanhua Zheng
Chinese Academy of Sciences, China
We demonstrate 980 nm tapered lasers with photonic crystal structure. The device delivers 3 W output
power under continuous wave operation and exhibits narrow vertical divergence below 16° and lateraldivergence below 4° at different currents. High beam quality is also achieved.
WE53 – "Optical Characteristics of GaAs-Based High Index Contrast Photonic Crystal Lasers with
Deeply-Etched Air Holes"
Kuo-Bin Hong, Chun-Chieh Yang, Tien-Chang Lu
National Chiao Tung Univ., Taiwan
We study the mode switching behavior of GaAs high index contrast photonic crystal lasers influenced
by deeply-etched air holes. Higher order guiding waves could coherently couple out of photonic crystal
and affect the laser output characteristics when the air filling factor increased.
WE54 – "High Efficiency Single Transverse Mode Photonic Band Crystal Lasers with High Beam Quality"
Shaoyu Zhao, Hongwei Qu, Yun Liu, Anjin Liu
Chinese Academy of Sciences, China
980nm ridge waveguide lasers based on photonic band crystal concept are designed and fabricated.
The maximum power conversion efficiency is 50%. The single transverse mode output power is 430mW
at 500mA with a very low vertical divergence of 11.1°.
WE55 – "Simultaneous Lasing of Exciton and Polariton in a ZnO Microcavity"41

25th International Semiconductor Laser Conference (ISLC 2016)

Yu Hsun Chou, Ying-Yu Lai, Tien-Chang Lu, Shing-Chung Wang
National Chiao Tung Univ., Taiwan
We have performed the condition to simultaneously triggered exciton-related polariton lasing andP-line exciton lasing in a ZnO micorcavity and verified the characteristics of their lasing behaviors.
In addition, the threshold energy, linewidth, phase diagram, and angular dispersion are verified anddiscussed.

10. Nitride & Visible Lasers
WE56 – "Anomalous Second Harmonic Generation During Femtosecond Superradiant Emission from
GaAs/AlGaAs Laser Structures"Peter P Vasil'ev1, Hirokazu Ohta2, Hirofumi Kan2, Richard V Penty1, Ian H White1
Univ. of Cambridge, UK, 2Hamamatsu Photonics K.K., Japan1

Anomalously strong blue SHG emission has been observed from GaAs/AlGaAs heterostructures during
the generation of femtosecond superradiant pulses. The conversion efficiency is an order of magnitude
greater than during standard lasing. The effect is attributed to the periodic e-h modulation and strongtransient population gratings.
WE57 – "Influence of Barrier Structure on Polarization Effect in Near Ultraviolet Light-Emitting Diodes"
Yen-Kuang Kuo1, Fang-Ming Chen1, Jih-Yuan Chang1, Bo-Ting Liou2
National Changhua Univ. of Education, Taiwan, 2Hsiuping Univ. of Science and Technology, Taiwan

1Specific design of barrier in the AlGaN-based near ultraviolet light-emitting diodes is investigatednumerically. Simulation results reveal that NUV LEDs with the proposed p-type/n-type barrier can
reduce the polarization-induced electrostatic field, and thus enhance the spatial overlap of electron
and hole wavefunctions in the wells.
WE58 – "Room-Temperature Lasing of GaN-InGaN Core-Shell Lasers in High-Order Whisper Gallery
Modes"
Chia-Yen Huang, Jing-Jie Lin, Che-Yu Liu, Kuo-Bin Hong, Tsu-Chi Chang, Yu-Hao Hsiao, Tien-Chang Lu,
Hao-Chung Kuo
National Chiao Tung Univ., Taiwan
Hexagon-shaped GaN-InGaN core-shell nanorods were fabricated and mechanically transferred toa SiO2 film. Lasing peaks around 368nm were observed under room-temperature under opticalpumping, with a threshold pumping density 5.1 MW/cm2. According to the cavity geometry and opticalsimulations, high-order whisper gallery modes were suggested.
WE59 – "Analysis and Optimization of InGaN Laser Diode with Landscape Model"
Yen-Chang Chen, Te-Jen Kung, Yuh-Renn Wu
National Taiwan Univ., Taiwan
We applied optical and electric model coupled with landscape theory to analyze InGaN LD and ismatched well to the reference LD. Next, we find the key factor and made further optimization of thereference structure including different QW numbers and quantum barriers.
WE60 – "Alloy-Compositional-Fluctuation Effects on Optical Gain Characteristics in AlGaN and InGaN
Quantum-Well Laser Diodes"
Atsushi A Yamaguchi1, Takuto Minami1, Shigeta Sakai1, Kazunobu Kojima2, Shigefusa F Chichibu2
1
Kanazawa Institute of Technology, Japan, 2Tohoku Univ., Japan
Optical gain characteristics have been calculated in AlGaN and InGaN quantum-well structures42

25th International Semiconductor Laser Conference (ISLC 2016)

considering the effects of alloy compositional fluctuation in the active layers. It is found that thedifference in gain characteristics between AlGaN and InGaN lasers becomes small with increasing thedegree of fluctuation.
WE61 – "The Optical Properties of GaN Microdisk on Graphene"
Hao Cyuan Jhang1, Shyh Jer Huang1, Jian Ting Lai1, Cheng Wei Chou1, Yan Kuin Su1, Tien Chang Lu2,
Kuo Bin Hong2, Yu Hsun Chou2, Jian Long Ruan3
1
Advanced Optoelectronic Technology Center, Taiwan, 2National Chiao Tung Univ., Taiwan, 3National
Chung Shan Institute of Science and Technology, Taiwan
High quality GaN microdisks were obtained by metal organic chemical vapor deposition (MOCVD)
growth technique on the SiO2/ Si substrate with graphene bufferlayer. The diameters are about 3 um
to 10 um for the GaN grains. Finally, it is lasing from the GaN microdisk.
WE62 – "Blue Laser Diode-Based White-light Communication System with Pulse Sprayed Phosphor
Conversion Film"
Dan-Hua Hsieh1, Yi-Rou Chen1, Tsai-Chen Wu2, Yu-Chieh Chi2, Gong-Ru Lin2, Hao-Chung Kuo1
1
National Chiao Tung Univ., Taiwan, 2National Taiwan Univ., Taiwan
The effect of pulse sprayed phosphor concentration on laser diode based white-light communication
with orthogonal frequency division multiplexing data format is investigated, which achieves acorrelated color temperature of 5000K and a data rate of 1.2Gb/s.
WE63 – "Gallium Nitride Super-Luminescent Light Emitting Diodes for Optical Coherence Tomography
Applications"
Graham R Goldberg1, Pavlo Ivanov1, Nobuhiko Ozaki2, David Childs1, Kristian Groom3, Kenneth Kennedy3,
Richard Hogg1
1
Univ. of Glasgow, UK, 2Wakayama Univ., Japan, 3The Univ. of Sheffield, UK
The role of biasing of absorber sections in multi-contact GaN f400nm SLEDs is discussed. We go on
to assess such devices for OCT applications. Analysis of the SLED emission spectrum allows an axial
resolution of 6.0µm to be deduced in OCT applications.

18:20-19:20 Break
19:20-

Banquet (Zuiten (West) room)43