Dortmund, Germany
bizdev@innolume.com; www.innolume.com

Bismuth doped fiber amplifier (BDFA-1310-60)••••••

Broadband amplification: 60nm @ Pin=-10dBm
Small signal gain: >19dBm @ Pin=-20dBm
Saturated output power >16dBm @ Pin=0dBm
Polarization insensitive: <0.3dB
Modified MSA package
SMF-28 FC/APC connectors

Preliminary Specifications
Parameter

Conditions

MinTyp.

Small signal gain

input signal: -20dBm, 1310 nm

1921.2Gain central wavelength

input signal: -10dBm

1305

1310

Gain bandwidth@-3dB, input signal: -10dBm

6063nmSaturated output power@ 1310 nm

1616.4dBm

Noise figure

input signal: -20dBm, 1310 nm

UnitdB1315

nm

6dB

Polarisation dependent gain

0.3dB

Differential group delay

0.35

ps

50°C

Operating temperature range
Operating voltage
Dimensions
Input/output fiber length

Test results

5.5Max.

-525+5V

90x70x35mm

0.8m

Dortmund, Germany
bizdev@innolume.com; www.innolume.com

Broad-Band Semiconductor Optical Amplifier (BOA-1280-60nm-PM-500mW)• High output power >500 mW @ 1280nm, 2A, Pin=10dBm• High saturation output power >25dBm @ 1280nm, 3A• Small Signal Gain >35dB @ 2A
• Wide bandwidth ~60nm @ Pin=10dBm• Polarization maintaining PM980 or PM1300 fiber

Preliminary Specifications @ typical Iop, 25°C
Parameter

Conditions

Min

Typ.

Max.

Unit

Operating current (Iop)

2000

3000

mA

Forward voltage (Vop)

2.2

3.0

V

Small signal gain

input signal: -20dBm, 1280 nm

30

35Gain central wavelength

input signal: 10dBm

1270

1280

Gain bandwidth@-3dB, input signal: 10dBm

Output powerinput signal: 10dBm, 1280 nm

Gain saturation output power@-3dB, 1280 nm

at each port

ASE PERat each port

Test results

1300nm60nm

400500mW

2324dBm

Noise Figure
ASE optical power

dB

156dB

150mW
dB

Dortmund, Germany
bizdev@innolume.com; www.innolume.com

Tx SOA optimized for WDM data transmission••

Low noise figure and high saturation power are the main prerequisites
for low Bit Error Rate (BER) after SOA.
Innolume GmbH offers quantum dot SOAs with best combination ofoutput saturation power (20 dBm) and noise figure (below 4 dB ex.
chip).

Preliminary Specifications, use case: 4 LanWDM ParameterConditions

MinTyp.

Max.

Unit

Operating current, Iop

500mA

Operating temperature, Top

47°C

Central wavelength of gain spectra

1303nmGain bandwidth

input signal: 5dBm

35nm

Gain, small signal

input signal: -25dBm, 1300nm

14dB

19dBm

5dB

Output saturation power
Noise figurefor λin = 1300nm

Input powers for BER < KP4-FEC
Input powers for BER < 10-12Test Results & BER Setup

without SOA

PAM4, 400 Gb/s

-126dBm

PAM4, 200 Gb/s

-125dBm

NRZ, 100 Gb/s

-156dBmDortmund, Germany
bizdev@innolume.com; www.innolume.com

50GHz Comb-Laser Diode (COMB-1310-50-COC-19)
0.8 mm•••••O-band DWDM signal source
up to 32 channels
mode locking
low relative intensity noise (RIN)fiber-coupled package with optical isolator (OI) possible

Preliminary Specifications @ Iop, 5V Bias, 25°C
Parameter

Conditions

Min

Operating current (Iop)

Typ.

Max.

300

Bias voltage

0Optical powerat recommended operating pointNumber of channels

at -3dB power level and low noiseInterval between adjacent modes

3mA
5110
1822UnitVmW
3250

GHz

3.5mW

Slow axis far-field, FWHM

7deg

Fast axis far-field, FWHM

38deg

Polarization extinction ratio

20dB

Average optical power / channel

Individual mode RIN

at recommended operating point

averaged in DC-10GHz range-125dB/Hz

Test results @ 25°C, 5V bias, Iop = 300mA

Blue squares: RIN ≤ -125 dB/Hz,
Black numbers: Number of modes
within 3dB range,
Green dots: Channel WL

RF spectrum of all beating
modes, measured with freespace and fiber opticalisolator

Dortmund, Germany
bizdev@innolume.com; www.innolume.com

100GHz Comb-Laser Diode (COMB-1310-100-PM-8)
••
•
•
•

O-band DWDM signal source
8 channels and moremode locking
low relative intensity noise (RIN)fiber-coupled package with optical isolator

Preliminary Specifications
Parameter

Conditions

MinTyp.

Optical powerat recommended operating point

78

Operating current (Iop)

Bias voltage

0Forward voltage

at recommended operating point

Number of channels

at -3dB power level and low noiseInterval between adjacent modes
at recommended operating point

Central wavelength

at 25CPolarization extinction ratio
Individual mode RIN

Test results @ 25°C, 5V bias, Iop = 300mA

Blue squares: RIN ≤ -125 dB/Hz,
Black numbers: Number of modes
within 3dB range,
Green dots: Channel WL

mW

80

100mA

14V

2.3

2.7

V100103

GHz

11300

1310mW
1320

18
averaged in DC-10GHz range

Unit

897

Average optical power / channelMax.

nmdB-125dB/Hz

Dortmund, Germany
bizdev@innolume.com; www.innolume.com

High Temperature 100mW DFB laser (DFB-1310-100-XX-65C)• High output power >100 mW• Temperature range: 25-85°C• High SMSR > 30 dB• Tolerant to parasitic feedback up to -30dB• Bare dies, Chip on Carrier or fiber-coupled package

Preliminary Specifications, 2mm chipParameterConditions

Min

Optical power

Carrier temperature range 25-85°C

100

Operating current (Iop)
Forward voltage (Vop)@ Iop

Peak wavelength@ 25°C , λ0=1310nm or custom in
1270-1330nm range

SMSRTyp.

MaxUnitmW

400500mA

1.52.5V

λ0-3λ0λ0+3nm3045dB

Far field, fast axis

FWHM

333537Deg

Far field, slow axis

FWHM

678DegAveraged RIN

In bandwidth DC-10GHz-145-140dB/HzFeedback resistivity

RIN < -135dB/HzPolarization

Test results

-30dB
TE

Dortmund, Germany
bizdev@innolume.com; www.innolume.com

High Temperature 150mW DFB laser (DFB-1310-XX-150-65C)• High output power >150 mW• Temperature range: 25-85°C• High SMSR > 30 dB• Tolerant to parasitic feedback up to -30dB• Bare dies, Chip on Carrier or fiber-coupled package

Preliminary Specifications, 3mm chipParameterConditions

Min

Optical power

Carrier temperature range 25-85°C

150

Operating current (Iop)
Forward voltage (Vop)@ Iop

Peak wavelength@ 25°C , λ0=1310nm or custom in
1270-1330nm range

SMSR

Typ.

Max

UnitmW

500700mA

1.5

2.5

V

λ0-3

λ0

λ0+3nm3045dBFar field, fast axis

FWHM

333537Deg

Far field, slow axis

FWHM

678DegAveraged RIN

In bandwidth DC-10GHz-145-140dB/HzFeedback resistivity

RIN < -135dB/Hz

Polarization

Test results-30dBTE

Dortmund, Germany
bizdev@innolume.com; www.innolume.com

Narrow linewidth 50mW DFB laser (DFB-1310-PM-50-NL)• Ultra-narrow optical line
• High SMSR > 30 dB• 14-pin package with built-in optical isolator
Applications:• LiDAR, coherent communications

Preliminary Specifications, ex fiber
ParameterConditions

Optical linewidth

FWHM, self-heterodyning test

Output power

Ex-fiber

Min

Unit

150

250kHzmW

300

400mA

1.5

2.0V

202540°C

λ0-3λ0λ0+3nm@ Iop

Chip temperature

Max50

Operating current
Forward voltage (Vop)Typ.

Peak wavelength@ 25°C , λ0=1310nm or custom in1270-1330nm range

Wavelength tunability

By temperature control

0.1nm/°C

Wavelength tunability

By current control

0.003

nm/mA

3045dB

1520dB

SMSR
PER

Test results, ex fiber

TE modeDortmund, Germany
bizdev@innolume.com; www.innolume.com

Frequency-Modulated DFB laser
Applications:• FMCW LiDAR• Seeding: Frequency modulation suppresses Brillouin scattering infiber and thus prevents output-power saturation.

Preliminary Specifications
ParameterConditions / Comments

Operation current (I0)

MinTyp.

Max.

Unit

85mA

Central wavelength

Other wavelengths are possible

1060nmOutput power

@ I0

170mW

16mA

Current modulation amplitude (ΔI)
Spectral range

Modulation frequency 50 MHz

9GHz

Spectral range

Modulation frequency 100 kHz

100GHzTest results