Standard specifications of
100 mm Sn-doped β-Ga2O3 (001) substrate
Items
Orientation
DopantConductivity
Resistivity (Ω･cm)

Specifications(001)
Snn-type
0.007–0.042

Dimensions

Diameter (mm)100 ±0.5

Orientation flatwidth (mm)32.5 ±2.5

Index flat width(mm)18.0 ±2.5

Thickness (mm)0.65 ±0.02

Reference
Offset angle(degree)
FWHM(arcsec)

Φ100 ±0.5

18.0 ±2.5[010]

Fig. 1[010]:0 ±1[100][100]:0 ±1[010]:50 or less32.5 ±2.5[100]:50 or less

Surface

Front

CMPBackCMPRemarks
1 There are cases in which the opposite side of OF is chipped less than 18 mm.
2 There are cases in which the OF side is chipped less than 32.5 mm ±2.5 mm.
3 These products must be used for research and development purposes only.
4 The substrates must not be used as a seed crystal.
5 The specifications are subject to change without notice.

Fig.１

2024.7. 29

Standard specifications of2 inch Sn-doped β-Ga2O3 (001) substrate
Items
Orientation
DopantConductivity

Specifications(001)
Snn-type
0.007–0.042

Diameter (mm)50.8 ±0.3

Orientation flatwidth (mm)15.9 ±2.5

Index flat width(mm)8.0 ±2.5

Thickness (mm)0.65 ±0.02

Dimensions

Resistivity (Ω･cm)

Reference
Offset angle(degree)
FWHM(arcsec)

Φ50.8 ±0.3

8.0 ± 2.5
[010]

Fig. 2[010]:0 ±1[100][100]:0 ±1[010]:50 or less15.9 ± 2.5[100]:50 or less

Surface

Front

CMP

Back

CMP

Remarks
1 There are cases in which the opposite side of OF is chipped less than 8 mm.
2 There are cases in which the OF side is chipped less than 15.9 mm ±2.5 mm.
3 These products must be used for research and development purposes only.
4 The substrates must not be used as a seed crystal.
5 The specifications are subject to change without notice.

Fig.2

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Standard specifications of 10×15 mm2 β-Ga2O3 (010) substrates
Items

Specifications

Orientation
Dopant(010)
UndopedFe

Conductivity

n-typen-typeInsulating(＞1010Ω・cm)

Nd-Na (cm-3)

1×1018–9×1018≦9×1017-A-B (mm)15 ±0.3

15 ±0.3

15 ±0.3

C-D (mm)

10 ±0.3

10 ±0.3

10 ±0.3

Thickness (mm)0.5 ±0.02

0.5 ±0.02

0.5 ±0.02

Fig. 3Fig. 3Fig. 3⊥[102]:0 ±1⊥[102]:0 ±1⊥[102]:0 ±1[102]:0 ±1[102]:0 ±1[102]:0 ±1⊥[102]:150 or less⊥[102]:150 or less⊥[102]:150 or less[102]:150 or less[102]:150 or less[102]:150 or less

Front

CMP

CMP

CMP

Back

Grinding

Grinding

Grinding

Dimensions

SnReference

Offset angle(degree)
FWHM (arcsec)

CA

B

D[001]

Fig. 3[102]Surface

Remarks
1 These products must be used for research and development purposes only.
2 The substrates must not be used as a seed crystal.
3 The specifications are subject to change without notice.

2024.7. 29

Standard specifications of 2 inch β-Ga2O3 (201) substrates
Items

Specifications

Orientation
Dopant(201)
UndopedFe

Conductivity

n-typen-typeInsulating(＞1010Ω・cm)

Nd-Na (cm-3)

1×1018–2×1019≦9×1017-Diameter (mm)50.8 ±0.350.8 ±0.350.8 ±0.3

Orientation flat width(mm)15.9 ±2.515.9 ±2.515.9 ±2.5

Thickness (mm)0.68 ±0.02

0.68 ±0.02

0.68 ±0.02

Fig. 4

Fig. 4

Fig. 4[010]: 0 ±0.4[010]: 0 ±0.4[010]:0 ±1[102]:-0.7 ±0.4[102]:-0.7 ±0.4[102]:-0.7 ±1[010]:150 or less[010]:150 or less[010]:150 or less[102]:150 or less[102]:150 or less[102]:150 or less

Front

CMP

CMP

CMP

Back

Grinding

Grinding

Grinding

Dimensions

Sn

Reference

Offset angle (degree)
FWHM (arcsec)

Φ50.8 ±0.3

[102]Surface

Remarks
1 There are cases in which the opposite side of OF is chipped less than 8 mm.
2 There are cases in which the OF side is chipped less than 15.9 mm ±2.5 mm.
3 These products must be used for research and development purposes only.
4 The substrates must not be used as a seed crystal.
5 The specifications are subject to change without notice.

15.9 ± 2.5[010]

Fig. 42024.7. 29