25th International Semiconductor Laser Conference (ISLC 2016)

Thursday, September 15
All talks will be held in the Zuiten (East) room
8:15-10:15

Session: PICs and Quantum Dot Lasers

Session Co-Chairs: Stephen Sweeney (Univ. of Surrey)
Koichi Akahane (National Institute of Information and Communications Technology)
8:15 ThA1 (Invited) – "Photonic Integrated Laser Systems in the 1.6 to 2.0 Micrometer Wavelength
Range on InP"
Erwin Bente, Sylwester Latkowski, Yuqing Jiao, Bauke Tilma, Domenico d'Agostino,
Hadi Rabbani-Haghighi, Renee van Veldhoven, Peter Thijs, Huub Ambrosius, Meint Smit,
Kevin Williams, Richard Noetzel
Technische Universiteit Eindhoven, The Netherlands
InP photonic integration technology has been adapted for operation down to 2 microns enabling thedevelopment of integrated laser systems for specific applications. Strained quantum well and quantum
dot gain media have been used to demonstrate tunable lasers for coherence tomography and gas
detection.
8:45 ThA2 – "External-Cavity Quantum-Dot Laser with Silicon Photonics Waveguide Mirror for FourWavelength Simultaneous Oscillation with an 800 GHz Channel Spacing"
Nami Yasuoka1, Mitsuru Ishida1, Kazumasa Takabayashi1, Ayahito Uetake1, Teruo Kurahashi1,
Masaomi Yamaguchi2, Kenichi Nishi2, Keizo Takemasa2, Kan Takada2, Tsuyoshi Yamamoto1,
Mitsuru Sugawara2, Yasuhiko Arakawa3
1
Fujitsu Laboratories Ltd., Japan, 2QD Laser, Inc., Japan, 3The Univ. of Tokyo, Japan
Stable four-wavelength simultaneous oscillation with an 800 GHz channel spacing and low relative
intensity noise (RIN) were demonstrated using a single external-cavity laser combined with a siliconƉŚŽƚŽŶŝĐŶĂŶŽǁŝƌĞǁĂǀĞŐƵŝĚĞĐŚŝƉĂŶĚĂϭ͘ϯʅŵƋƵĂŶƚƵŵĚŽƚ;YͿŐĂŝŶĐŚŝƉŝŶƚĞŐƌĂƚĞĚǁŝƚŚĂƐƉŽƚͲsize converter.
9:00
Si"

dŚϯʹΗŽƚ^ƚĂƚĞWƌŽƉĞƌƚŝĞƐŽĨϭ͘ϯʅŵ>ŽǁͲůŽƐƐ/ŶƐYƵĂŶƚƵŵŽƚ>ĂƐĞƌƐ'ƌŽǁŶŝƌĞĐƚůǇŽŶ

Stella N Elliott1, Samuel Shutts1, Angela Sobiesierski1, Peter Rees1, Peter M Smowton1, Mingchu Tang2,
Jiang Wu2, Huiyun Liu2
1
Cardiff Univ., UK, 2Univ. College London, UK/ŶƚŚĞĨŝƌƐƚĐŽŵƉĂƌŝƐŽŶŽĨŝĚĞŶƚŝĐĂůϭ͘ϯʅŵ/ŶƐͬů'ĂƐƋƵĂŶƚƵŵͲĚŽƚƐƚƌƵĐƚƵƌĞƐŐƌŽǁŶŽŶƐŝůŝĐŽŶ;ǁŝƚŚ
defect filter layers, but no germanium) and GaAs substrates, both demonstrate dot-state emission ofsimilar intensity, spectral breadth and areal dot density (3.3-3.5X1010cm-2) with a 35nm blue shift on
silicon.
9:15 ThA4 – "Electrically Pumped Continuous-Wave III-V Quantum Dot Lasers Monolithically Grown
On Silicon"
Siming Chen1, Jiang Wu1, Wei Li2, Mengya Liao1, Mingchu Tang1, Qi Jiang1, Samuel Shutts3,
Stella Elliott Elliott3, Angela Sobiesierski3, Ian Mark Ross2, Peter Smowton3, Alwyn Seeds1, Huiyun Liu1
1
Univ. College London, UK, 2The Univ. of Sheffield, UK, 3Cardiff Univ., UK
We demonstrate electrically pumped continuous-wave InAs/GaAs quantum dot lasers monolithicallygrown on silicon substrates with a low threshold current density of 62.5 Acm-2, a room temperature
output exceeding 105 mW, operation up to 120 °C, and long extrapolated lifetime exceeding 100,000 h.
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25th International Semiconductor Laser Conference (ISLC 2016)

9:30

ThA5 – "A Wafer-bonded Hybrid Silicon Quantum Dot Laser"

Geza Kurczveil, Di Liang, Marco Fiorentino, Ray Beausoleil
Hewlett Packard Labs, USA
We present a wafer-bonded hybrid-silicon quantum-dot laser. Continuous-wave operation up to 100°C and a threshold current density of 227 A/cm2 at room temperature are observed. Efficient coupling
to a passive silicon waveguide is demonstrated. These devices are a key component in next generation
supercomputers.
9:45

ThA6 – "Transverse-Magnetic Laser Oscillation from Highly Stacked InAs/GaAs Quantum Dots"

Toshiyuki Kaizu, Masaya Suwa, Takaya Andachi, Yukihiro Harada, Takashi Kita
Kobe Univ., Japan
We studied electroluminescence and net-modal gain in 40-stacked InAs/GaAs quantum dot (QD)
laser devices. Since the electronic coupling between the QDs enhanced the transverse-magnetic (TM)component, the [110] waveguide devices exhibited a laser oscillation in the TM component as well as
the transverse-electric (TE) component.
10:00 ThA7 – "1-um InAs Quantum Dot Micro-disk Lasers Directly Grown on Exact (001) Si"
Kei May Lau1, Yating Wan1, Qiang Li1, Alan Y. Liu2, Weng W Chow3, Arthur C. Gossard2, John E. Bowers2,
Evelyn L. Hu4
1Hong Kong Univ. of Science and Technology, Hong Kong, 2Univ. of California, Santa Barbara, USA,
3
Sandia National Laboratories, USA, 4Harvard Univ., USAĂƉŝƚĂůŝǌŝŶŐŽŶŽƵƌŶŽǀĞůĞƉŝƚĂǆŝĂůƉƌŽĐĞƐƐĞƐ͕ǁĞĚĞŵŽŶƐƚƌĂƚĞƐƵďǁĂǀĞůĞŶŐƚŚŵŝĐƌŽͲĚŝƐŬůĂƐĞƌƐϭʅŵ
in diameter on exact (001) silicon substrates. Under continuous wave optical pumping at 10 K, lowƚŚƌĞƐŚŽůĚƐĚŽǁŶƚŽϯϱʅtǁĞƌĞŽďƚĂŝŶĞĚƚŽŐĞƚŚĞƌǁŝƚŚĂŚŝŐŚƐƉŽŶƚĂŶĞŽƵƐĞŵŝƐƐŝŽŶĨĂĐƚŽƌŽĨϬ͘ϯ͘

10:15-10:35 Coffee Break
10:35-12:50

Session: Heterogeneous Lasers on Silicon

Session Co-Chairs: Larry Coldren (Univ. of California, Santa Barbara)
Takahiro Nakamura (Photonics Electronics Technology Research Association)
10:35 ThB1 (Invited) – "Heterogeneous Integration of III-V on Silicon for System-in-Package Photonic
Transceivers"
G. Fish, B. R. Koch, E. J. Norberg, J. E. Roth, A. Ramaswamy, J. Hutchinson, J. Shin, A. Fang
Aurrion Inc., USA
Heterogeneous integration enables high performance active components such as lasers, modulators,
and photodetectors to be elegantly integrated on a silicon photonics platform with high performancepassive components. This platform also offers the unique capability to combine different types ofactive devices with separately optimized materials on the same wafer, die, and photonic integrated
circuit. Experimental demonstrations show that these active components can achieve performanceon par with commercially available discrete III-V components. Furthermore, the technique enables
the consolidation of a complete optical transceivers onto a singular silicon substrate enabling thedevelopment of system-in-package architectures and assembly processes that are indistinguishable
from those used in standard electronic packaging. In this paper we will discuss the advantages of thisheterogeneous integration platform and discuss prototype demonstrations.
11:05 ThB2 – "Narrow-Linewidth Lasers Using On-Chip High-Q Resonators"
Tin Komljenovic1, Daryl T. Spencer1, Michael L. Davenport1, Sudharsanan Srinivasan2, John E. Bowers145

25th International Semiconductor Laser Conference (ISLC 2016)

Univ. of California, Santa Barbara, USA, 2Aurrion Inc., USA1

We present heterogeneously integrated widely-tunable semiconductor lasers with narrow-linewidth.
50 kHz integrated linewidth was demonstrated, and sub-kHz Lorentzian linewidths are predicted using
high-Q ring resonators made in Si. Low-frequency noise was suppressed by more than 30 dB using an
ultra-high Q Si3N4 resonator.
11:20 ThB3 – "High Asymmetric Light Output Characteristics of Membrane Distributed-Reflector Laser
on Si Substrate"
Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Kai Fukuda, Tomohiro Amemiya,
Nobuhiko Nishiyama, Shigehisa Arai
Tokyo Institute of Technology, Japan
High asymmetric light output ratio between the front and the rear of 14.5 as well as an improved
differential quantum efficiency of 29% at the front was obtained for GaInAsP/InP membraneĚŝƐƚƌŝďƵƚĞĚͲƌĞĨůĞĐƚŽƌůĂƐĞƌŽŶ^ŝǁŝƚŚϱϬʅŵͲůŽŶŐ&ĂŶĚϭϬϬʅŵͲůŽŶŐZƐĞĐƚŝŽŶƐ͘
11:35 ThB4 – "Enhanced Modulation Bandwidth of Heterogeneously Integrated III-V-on-silicon DFB
Laser for 40 Gb/s NRZ-OOK Direct Modulation"
Amin Abbasi1, Jochem Verbist2, Xin Yin2, Francois Lelarge3, Guang Hua Duan3, Johan Bauwelinck2,
Gunther Roelkens1, Geert Morthier1
1
Ghent Univ. – IMEC, Belgium, 2Ghent Univ. – iMinds – IMEC, Belgium, 3III-V lab, a joint lab of 'AlcatelLucent Bell Labs', 'Thales Research and Technology' and 'CEA Leti', France
We present 40 Gb/s non-return-to-zero on-off keying direct modulation of a heterogeneously
integrated III-V-on-silicon DFB laser. Leveraging the photon-photon resonance effect, the modulation
bandwidth is increased to 27 GHz. We demonstrate error free transmission over 2 km non-zerodispersion shifted fiber.
11:50 ThB5 – "Lasing Characteristics of GaInAsP Laser Diode Grown on Directly Bonded InP/Si
Substrate"
Tetsuo Nishiyama, Keiichi Matsumoto, Jyunya Kishikawa, Yuya Onuki, Naoki Kamada,Kazuhiko Shimomura
Sophia Univ., Japan
We have obtained lasing characteristics of GaInAsP double-hetero laser grown on directly bonded InP/
^ŝƐƵďƐƚƌĂƚĞƚŚƌŽƵŐŚƚŚĞ/ŶWͲ^ŝŝŶƚĞƌĨĂĐĞĐĂƌƌŝĞƌŝŶũĞĐƚŝŽŶ͘dŚĞ/ŶWͬ^ŝƐƵďƐƚƌĂƚĞǁĂƐƉƌĞƉĂƌĞĚďǇϭʅŵ/ŶWand Si substrate. Threshold current and spectrum of laser on InP/Si and InP substrate are discussed.
12:05 ThB6 – "Passively Mode-Locked Iii-V-on-silicon Laser with 1 GHz Repetition Rate"
Kasper SJ Van Gasse1, Zhechao Wang1, Valentina Moskalenko2, Sylwester Latkowski2, Bart Kuyken1,
Erwin Bente2, Gunther Roelkens3
1
IMEC, Belgium, 2Technical Univ. of Eindhoven, The Netherlands, 3Ghent Univ., BelgiumtĞƉƌĞƐĞŶƚĂŶŽŶͲĐŚŝƉ///ͲsͲŽŶͲƐŝůŝĐŽŶŵŽĚĞͲůŽĐŬĞĚůĂƐĞƌĂƚϭ͘ϲʅŵǁŝƚŚĂϭ',ǌƌĞƉĞƚŝƚŝŽŶƌĂƚĞĂŶĚͲϲ
dBm output in the waveguide. The optical spectrum showed a 10.8 nm wide comb, the corresponding
pulses showed an autocorrelation trace FWHM of 11 ps.
12:20 dŚϳʹΗDĞŵďƌĂŶĞŝƐƚƌŝďƵƚĞĚͲZĞĨůĞĐƚŽƌ>ĂƐĞƌƐǁŝƚŚϮϬͲʅŵͲůŽŶŐ&^ĞĐƚŝŽŶĂŶĚ&ƌŽŶƚͬZĞĂƌ
DBRs on Si Substrates"
Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto,Takaaki Kakitsuka, Shinji Matsuo
NTT Corporation, JapantĞŚĂǀĞĚĞǀĞůŽƉĞĚĚŝƐƚƌŝďƵƚĞĚƌĞĨůĞĐƚŽƌůĂƐĞƌƐƚŚĂƚŝŶĐůƵĚĞĂϮϬͲʅŵͲůŽŶŐ&ƐĞĐƚŝŽŶŽŶ^ŝKϮͬ^ŝ
46

25th International Semiconductor Laser Conference (ISLC 2016)

substrates to reduce power consumption. By employing DBRs for both sides of the DFB section, we
achieve a threshold current of 0.66 mA with a grating coupling coefficient of 820 cm-1.
12:35 ThB8 – "Impedance Analysis of High-speed Lateral-current-injection Membrane DFB Laser on
Silicon"Daisuke Inoue, Takuo Hiratani, Kai Fukuda, Takahiro Tomiyasu, Tomohiro Amemiya,
Nobuhiko Nishiyama, Shigehisa Arai
Tokyo Institute of Technology, Japan
Impedance characteristics of a membrane DFB laser were measured to reveal an effect of parasitics on
the modulation bandwidth. The cutoff frequency was obtained to be 13.7 GHz by measuring reflection
S11. Additionally, 18 Gbit/s direct modulation was performed at a bias current of 1.5-mA.

12:50-13:50 Lunch (Lunch box is served)
13:50-15:35

Session: Photonic Crystal Lasers

Session Co-Chairs: Jerry Meyer (Naval Research Laboratory)
Weng Chow (Sandia National Laboratories)
13:50 ThC1 (Invited) – "Membrane DFB and Photonic Crystal Lasers on Si"
Shinji Matsuo, Koji Takeda, Takuro Fujii, Hidetaka Nishi, Takaaki Kakitsuka
NTT Corporation, Japan
We have developed lateral current injection membrane DFB and photonic crystal lasers, in whicha buried heterostructure is used. Effective confinements of photons and carriers are essential toachieve low-operating-energy directly modulated lasers. We have also demonstrated heterogeneous
integration of membrane lasers on SiO2/Si substrates.
14:20 ThC2 – "Tunable 1D Photonic Crystal Nanolaser and its Capability of Stretching Sensing"
Tsan-Wen Lu, Chun Wang, Chi-Fan Hsiao, Po-Tsung Lee
National Chiao Tung Univ., Taiwan
Tunable nanolasers via 1D nanoblocks embedded within polydimethylsiloxane are demonstrated,which show large wavelength tunability of 7.65nm per 1% stretching and high reliability under
repeating stretching/relaxing tests. Wide tuning range over 80nm is achieved. As a stretching sensor,
minimum detectable stretching of 0.072% is obtained.
14:35 ThC3 – "Photonic Crystal Nanolaser as an Iontronic Sensor"
Takumi Watanabe, Yu Hasegawa, Toshihiko Baba
Yokohama National Univ., Japan
We found that GaInAsP semiconductor photonic crystal nanolaser can detect the electric charge ina solution from its emission intensity change. It will be applicable to sensing pH, chemical elements,hydrophobicity/hydrophilicity, bio-molecules, cells, etc.
14:50 ThC4 – "In-plane Mutual Wavelength Locking of Photonic Crystal Lasers"
Menaka De Zoysa1, Taiga Kobayashi1, Masahiro Yoshida1, Masato Kawasaki2, Kenji Ishizaki1,
Ranko Hatsuda1, Susumu Noda1
1
Kyoto Univ., Japan, 2Mitsubishi Electric Corporation, Japan
In-plane mutual wavelength locking phenomena of photonic crystal lasers are investigated bysimultaneously driving spatially separated areas. Although each area has a slightly different
47

25th International Semiconductor Laser Conference (ISLC 2016)

wavelength, single mode lasing can be achieved during simultaneous operation. Such locking behavior
becomes the basis for large-area single mode operation.
15:05 ThC5 – "Mode Control in Photonic Crystal Surface Emitting Lasers Through In-Plane Feedback"Richard James Edward Taylor1, Guangrui Li2, Pavlo Ivanov2, David Childs2, Benjamin Stevens3,
Bret Harrison3, Nasser Babazadeh2, Olesya Ignatova2, Richard Andrew Hogg2
1
The Univ. of Tokyo, Japan, 2Univ. of Glasgow, UK, 3The Univ. of Sheffield, UK
Mode control in photonic crystal surface emitting lasers is demonstrated through the use of
distributed, varying phase feedback introduced through cleaved facets.
15:20 ThC6 – "Realization of Two-dimensional Beam Steering by Position-modulated Photonic-crystal
Lasers"Daiki Yasuda1, Kyoko Kitamura2, Susumu Noda1
1
Kyoto Univ., Japan, 2Kyoto Institute of Technology, JapanWe demonstrate two-dimensional beam steering operation by position-modulated photonic-crystal
lasers. We show that maximum beam steering angle can be ±45 degrees, and that a range of twodimensional beam steering can be achieved smoothly for various directions. The results promise tofurther development of laser-scanning applications.

15:35-15:55 Coffee Break
15:55-17:40

Session: Wide Bandgap Lasers

Session Co-Chairs: Atsushi Yamaguchi (Kanazawa Institute of Technology)
Uwe Strauss (OSRAM GmbH)
15:55 ThD1 – "Low-threshold Chip-scale Aluminum Nitride Raman Laser"
Xianwen Liu1, Changzheng Sun1, Bing Xiong1, Jian Wang1, Lai Wang1, Yanjun Han1, Zhibiao Hao1,
Hongtao Li1, Yi Luo1, Jianchang Yan2, Tongbo Wei2, Yun Zhang2, Junxi Wang2
1
Tsinghua Univ., China, 2Chinese Academy of Sciences, China
Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of
f1.2×106. The threshold pump power is f8.7 mW, with unidirectional slope efficiency of f5.1%.
Raman frequency shifts of f612 and f657 cm-1 are observed for incident light with different
polarization.
16:10 ThD2 – "Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon"
Stefan Thomas Jagsch1, Noelia Vico Triviño2, Gordon Callsen1, Stefan Kalinowski1,
Ian Michael Rousseau2, Jean-François Carlin2, Raphaël Butté2, Axel Hoffmann1, Nicolas Grandjean2,
Stephan Reitzenstein1
1
Technical Univ. of Berlin, Germany, 2École Polytechnique Fédérale de Lausanne, Switzerland
We present a temperature dependent optical and quantum-optical characterization of close-to-ideal
lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to proveŚŝŐŚͲɴůĂƐŝŶŐĂƚƌŽŽŵƚĞŵƉĞƌĂƚƵƌĞ͕ĂŶĚƚŚƌĞƐŚŽůĚůĞƐƐůĂƐŝŶŐĂƚϭϱϲ<͘
16:25 ThD3 – "Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers"
Charles A Forman, John T Leonard, Erin C Young, Seunggeun Lee, Daniel A Cohen, Benjamin P Yonkee,
Robert M Farrell, Tal Margalith, Steven P DenBaars, James S Speck, Shuji Nakamura
Univ. of California, Santa Barbara, USA48

25th International Semiconductor Laser Conference (ISLC 2016)

This is a report of recent progress on GaN-based vertical-cavity surface-emitting lasers (VCSELs). Ion
implanted aperture VCSELs with tunnel junction intracavity contacts outperformed dielectric apertureswith indium tin oxide intracavity contacts. A novel buried tunnel junction design offers a solution for
current and optical confinement.
16:40 ThD4 – "1.7-mW Nitride-Based Vertical-Cavity Surface-Emitting Lasers Using AlInN/GaN Bottom
DBRs"
Takashi Furuta1, Kenjo Matsui1, Yugo Kozuka1, Shotaro Yoshida1, Natsumi Hayashi1, Takanobu Akagi1,
Norikatsu Koide1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Isamu Akasaki2
1
Meijo Univ., Japan, 2Meijo Univ. and Nagoya Univ., JapanWe demonstrated 1.7 mW nitride-based vertical-cavity surface-emitting lasers (VCSELs) using
AlInN/GaN distributed Bragg reflectors (DBRs). The threshold current was 4.5 mA, and the external
differential quantum efficiency was estimated to be 11.5%.
16:55 ThD5 – "Underwater 6.4-m Optical Wireless Communication with 8.8-Gbps Encoded 450-nm
GaN Laser Diode"
Yu-Chieh Chi1, Tsai-Chen Wu1, Che-Yu Lin2, Hai-Han Lu2, Hao-Chung Kuo3, Gong-Ru Lin1
1
National Taiwan Univ., Taiwan, 2National Taipei Univ. of Technology, Taiwan, 3National Chiao Tung
Univ., Taiwan
6.4-m underwater optical wireless communication based on a GaN blue laser diode under direct 8.8Gbps QAM-OFDM encoding is demonstrated with an average signal-to-noise ratio of 16 dB and a bit
error rate of 3.8×10-3.
17:10 ThD6 – "High Efficiency Semipolar III-Nitride Lasers for Solid State Lighting"
Daniel Becerra, Daniel Cohen, Robert Farrell, Steven DenBaars, Shuji Nakamura
Univ. of California, Santa Barbara, USA
An approach is proposed to improve high power CW semipolar III-nitride lasers. Performance was
improved after moving to a 2 QW active region, and compensation of the Mg acceptor by oxygen in the
EBL was identified as a source of carrier leakage and excess voltage.
17:25 ThD7 – "Realization of Over 10% EQE AlGaN Deep-UV LED by Using Transparent p-AlGaN
Contact Layer"
Hideki Hirayama1, Takayoshi Takano1,2, Jun Sakai1,2, Takuya Mino1,2, Kenji Tsubaki1,2, Norihiko Maeda1,
Masafumi Jo1, Yuuya Kanazawa1,3, Issei Ohshima1,3, Takuma Matsumoto1,3, Norihiko Kamata3
1
RIKEN, Japan, 2Panasonic Corporation, Japan 3Saitama Univ., Japan
The improvement of light-extraction efficiency (LEE) is major subject for AlGaN deep-ultraviolet lightemitting diodes (DUV-LEDs). We demonstrated over 10% external quantum efficiency in an AlGaN DUVLED by improving LEE by introducing transparent p-AlGaN contact layer.

17:40-

Post Deadline Paper
Closing Ceremony

Session Co-Chairs: Luke J. Mawst (Univ. of Wisconsin-Madison)
Akihiko Kasukawa (Furukawa Electric Co., Ltd.)

49