25th International Semiconductor Laser Conference (ISLC 2016)

Tuesday, September 13
All talks will be held in the Zuiten (East) room
8:00-10:15

Opening Ceremony
Plenary Lecture

Session Co-Chairs: Yuichi Tohmori (Tsurugi Photonics Foundation)
Kent Choquette (Univ. of Illinois)
8:00

TuA1 (Plenary) – "What does it Take to Make The Semiconductor Laser a High Coherence Laser"

Amnon Yariv
California Institute of Technology, USA
The Semiconductor laser (SCL) is, arguably, the most important player in the optoelectronic field. It is
hard to imagine a modern communications measurement, or a sensing system without it. It owes this
distinction principally to its monolithic semiconductor character, which is responsible for a long listof crucial attributes. These include small size, efficiency, natural compatibility with electronic driving
circuitry, speed, structural and chemical control of key features. Another feature of the SCL, which is
mentioned less often is its intellectual elegance. Its theoretical underpinnings, design and fabrication
require an intricate interweaving of solid state physics, quantum field theory, semiconductor device
theory, material science, and laser theory. The chemical and fabrication control enables us to vary theactive medium from that of a bulk semiconductor to that of atom-like quantum dots. The incorporationof spatial modulation, of the structure, modulated gratings, photonic crystals, for example, enables
a spatial control that would be analogous, to the ability to design crystals with varying size of atoms
and of periodicities. The noise, and the resulting degraded coherence, of the semiconductor laser isan example of the Dissipation-Fluctuation theorem. Which links losses with noise. This is manifested
in the SCL by following chain of causally related events: high optical losses (dissipation) --> large
compensatory gain provided by the inverted population of electrons and holes --> high rate of
spontaneous recombination emission into the laser mode --> low coherence. This chain can, however,be snapped by taking advantage of the new flexibility afforded us by the Si photonic platform. This isachieved by redesigning the laser mode so that the overwhelming majority (f 99%) of optical energy is
moved away from the lossy III-V material into the, essentially lossless, Si. The residual, about 1% in ourcase, of the optical energy remaining in the III-V is just sufficient to provide the now reduced, thresholdgain. Applying these ideas results in new lasers in which the fundamental quantum noise is some threeorders of magnitude below that of high-performance commercial Distributed Feedback SCLS. Somethoughts of future directions for improved coherence in SCLs will conclude the talk.
8:45

TuA2 (Plenary) – "In-plane Semiconductor Membrane Lasers for Photonic Integrated Circuits"

Shigehisa Arai
Tokyo Institute of Technology, Japan
Lasing properties of in-plane semiconductor membrane lasers required for ultra-low powerconsumption and high-speed operation are explained from aspects of output power and directmodulation bandwidth. Recent results on GaInAsP/InP long wavelength membrane lasers are reviewed
and remaining issues for this application will be discussed.
9:30

TuA3 (Plenary) – "Quantum Dot Lasers for Integrated Photonics"

Peter M. Smowton1, Sam Shutts1, Robert Thomas1, Stella Elliott1, Angela Sobiesierski1, Ivan Karomi1,
Sara Gillgrass1, Andrey Krysa2
1
Cardiff Univ., UK, 2The Univ. of Sheffield, UK
We review progress in the operating performance and the underlying physical mechanisms of InP
20

25th International Semiconductor Laser Conference (ISLC 2016)

quantum dot lasers and demonstrate applications in dual wavelength sources and monolithicallyintegrated optoelectronics and microfluidics for cell sensing.

10:15-10:35 Coffee Break
10:35-12:50

Session: Mid IR Laser

Session Co-Chairs: Gary Evans (Southern Methodist Univ.)
Chung-en Zah (Focuslight)
10:35 dƵϭ;/ŶǀŝƚĞĚͿʹΗ/ŶƚĞƌďĂŶĚĂƐĐĂĚĞ>ĂƐĞƌƐŵŝƚƚŝŶŐĂƚϰ͘ϲͲϲ͘ϭʅŵΗ
C. L. Canedy1, M. V. Warren1, C. D. Merritt1, W. W. Bewley1, M. Kim2, C. S. Kim1, I. Vurgaftman1,J. R. Meyer1, M. Fradet3, C. F. Fradet3, R. M. Briggs3, S. Forouhar3
1Naval Research Laboratory, USA, 2Sotera Defense Solutions, Inc., USA, 3Jet Propulsion Laboratory, USAtĞƌĞƉŽƌƚŝŶƚĞƌďĂŶĚĐĂƐĐĂĚĞůĂƐĞƌƐĞǆŚŝďŝƚŝŶŐŝŵƉƌŽǀĞĚƉĞƌĨŽƌŵĂŶĐĞŝŶƚŚĞʄсϰ͘ϲͲϲ͘ϭʅŵƐƉĞĐƚƌĂůƌĂŶŐĞ͘&ŽƌƉƵůƐĞĚŽƉĞƌĂƚŝŽŶĂƚϯϬϬ<͕ƚŚĞƚŚƌĞƐŚŽůĚĐƵƌƌĞŶƚĚĞŶƐŝƚǇŽĨĂďƌŽĂĚĂƌĞĂĚĞǀŝĐĞĞŵŝƚƚŝŶŐĂƚʄуϰ͘ϴʅŵŝƐϮϮϬͬĐŵ2, while its external differential quantum efficiency per stage is 33%.
11:05 TuB2 – "4.7 mm-Emitting Leaky-Wave-Coupled Quantum Cascade Laser Phase-Locked Array"
C. Sigler1, C. Boyle1, J. D. Kirch1, D. Lindberg III2, T. Earles2, J. Myers3, R. Bedford3, D. Botez1,
Luke J. Mawst1
1
Univ. of Wisconsin-Madison, USA, 2Intraband LLC, USA, 3Air Force Research Laboratory, Sensors
Directorate, Wright-Patterson AFB, USAWŚĂƐĞͲůŽĐŬŝŶŐ͕ǀŝĂůĞĂŬǇͲǁĂǀĞĐŽƵƉůŝŶŐ͕ŽĨĨŝǀĞϰ͘ϳʅŵͲĞŵŝƚƚŝŶŐƋƵĂŶƚƵŵĐĂƐĐĂĚĞůĂƐĞƌƐŝƐ
demonstrated. Non-resonant devices fabricated by two-step MOCVD operate in mixtures of in-phaseand out-of-phase modes to 3.85 W peak pulsed output power. Design analysis shows in-phase-mode
operation under resonant-coupling occurs for optimized devices.
11:20 TuB3 – "Distributed Feedback Quantum Cascade Lasers on Silicon"
Alexander Spott1, Jon Peters1, Michael Davenport1, Eric Stanton1, Chong Zhang1, William Bewley2,
Charles Merritt2, Igor Vurgaftman2, Chul Soo Kim2, Jerry Meyer2, Jeremy Kirch3, Luke Mawst3,
Dan Botez3, John Bowers1
1
Univ. of California, Santa Barbara, USA, 2Naval Research Laboratory, USA, 3Univ. of Wisconsin-Madison,
USA
Here we demonstrate distributed feedback (DFB) quantum cascade lasers (QCLs) which areheterogeneously integrated on silicon. These lasers emit over 200 mW of pulsed power at room
temperature and operate at up to 100 °C.
11:35 dƵϰʹΗ&ŝƌƐƚĞŵŽŶƐƚƌĂƚŝŽŶŽĨϮʅŵtĂǀĞůĞŶŐƚŚdƵŶĂďůĞŝƐƚƌŝďƵƚĞĚƌĂŐŐZĞĨůĞĐƚŽƌ>ĂƐĞƌ
Diode"
Takuya Kanai, Naoki Fujiwara, Yoshitaka Ohiso, Hiroyuki Ishii, Mikitaka Itoh
NTT Corporation, JapantĞŚĂǀĞĚĞǀĞůŽƉĞĚƚŚĞĨŝƌƐƚϮʅŵǁĂǀĞůĞŶŐƚŚƚƵŶĂďůĞĚŝƐƚƌŝďƵƚĞĚƌĂŐŐƌĞĨůĞĐƚŽƌ;ZͿůĂƐĞƌĚŝŽĚĞ͘dŚĞϮʅŵZůĂƐĞƌĞŶĂďůĞƐƵƐƚŽŽďƚĂŝŶĂĐŽŶƚŝŶƵŽƵƐǁĂǀĞůĞŶŐƚŚƚƵŶŝŶŐƌĂŶŐĞŽĨϱ͘ϲŶŵǁŝƚŚĂƐŝŶŐůĞtuning current.
11:50 dƵϱʹΗDŝĚͲ/ŶĨƌĂƌĞĚYƵĂŶƚƵŵĂƐĐĂĚĞ>ĂƐĞƌ/ŶƚĞŐƌĂƚĞĚǁŝƚŚʄͬϰͲƚŚŝĐŬŝƐƚƌŝďƵƚĞĚƌĂŐŐ
Reflector (DBR)"

21

25th International Semiconductor Laser Conference (ISLC 2016)

Hiroyuki Yoshinaga, Jun-ichi Hashimoto, Hiroki Mori, Yukihiro Tsuji, Manabu Shiozaki, Makoto Murata,
Mitsuru Ekawa, Yasuhiro Iguchi, Tsukuru Katsuyama
Sumitomo Electric Industries, LTD., Japan
We report a first successful operation of a distributed Bragg reflector (DBR) integrated InP-based QCL.
dŚĞZĨĂĐĞƚ;ʄͬϰͲƚŚŝĐŬƐĞŵŝĐŽŶĚƵĐƚŽƌͲǁĂůůĂŶĚʄͬϰͲƚŚŝĐŬĂŝƌͲŐĂƉ͕ϮƉĂŝƌƐͿƐŚŽǁƐĂŚŝŐŚƌĞĨůĞĐƚŝǀŝƚǇŽĨϵϭй͕ůĞĂĚŝŶŐƚŽĂƐŝŐŶŝĨŝĐĂŶƚƚŚƌĞƐŚŽůĚĐƵƌƌĞŶƚƌĞĚƵĐƚŝŽŶŽĨY>ŝŶϳʅŵǁĂǀĞůĞŶŐƚŚƌĞŐŝŽŶ͘
12:05 TuB6 – "Realization of Unexplored Frequency Terahertz Quantum-Cascade Lasers by Using III
Nitride Semiconductors"
Wataru Terashima1, Norihiko Kamata2, Hideki Hirayama1
1
RIKEN, Japan, 2Saitama Univ., Japan
III Nitride semiconductor is a material having a potential for realizing wide frequency range of quantum
cascade lasers (QCLs) including unexplored frequency from 5 to 12 THz. We fabricated GaN/AlGaN THzQCLs with novel pure-3-level design active regions and achieved lasing at frequency between 5.4-7 THz.
12:20 dƵϳʹΗ^ŝŶŐůĞͲDŽĚĞ/ŶƚĞƌďĂŶĚĂƐĐĂĚĞ>ĂƐĞƌƐŵŝƚƚŝŶŐďĞǇŽŶĚϱ͘ϮʅŵĨŽƌ^ĞŶƐŝŶŐ
Applications"
Steffen Becker1, Julian Scheuermann1, Michael Von Edlinger1, Lars Nähle1, Marc Fischer1, Robert Weih1,
Johannes Koeth1, Sven Höfling2, Martin Kamp2
1nanoplus Nanosystems and Technologies GmbH, Germany, 2Universität Würzburg, Germany
We present single-mode distributed feedback interband cascade lasers with record long wavelengthĞŵŝƐƐŝŽŶďĞǇŽŶĚϱ͘Ϯʅŵ͘dŚĞĚĞǀŝĐĞƐƐŚŽǁĐŽŶƚŝŶƵŽƵƐǁĂǀĞŽƉĞƌĂƚŝŽŶĂƚƌŽŽŵƚĞŵƉĞƌĂƚƵƌĞ͕
threshold currents of 66 mA and side mode suppression ratios >28 dB with more than 5 nm tuning
range.
12:35 TuB8 – "Wavelength Dependence of Efficiency Limiting Mechanisms in Type I GaInAsSb/GaSb
Lasers Emitting in the Mid-Infrared"
Timothy Eales1, Igor P. Marko1, Barnabas A. Ikyo1, Alf R. Adams1, Shamsul Arafin2, Stephan Sprengel2,
Markus C. Amann2, Stephen Sweeney1
1
Univ. of Surrey, UK, 2Technische Universität München, Germany
Type-I GaInAsSb lasers, emitting between 2-3 µm are investigated using temperature and highpressure. A model of the Auger processes is used to fit the non-radiative component of the thresholdcurrent at room temperature, identifying the dominance of different Auger losses across the
wavelength range.

12:50-13:50 Lunch (Lunch box is served)
13:50-16:05

Session: Novel Communication Lasers

Session Co-Chairs: Peter Smowton (Cardiff Univ.)
Milan Mashanovitch (Freedom Photonics)
13:50 TuC1 (Invited) – "Monolithic Laser Integrated Mach-Zehnder Modulator InP PICs for High-Speed
Optical Networks"
Sophie Lange, Ronald Kaiser, Marko Gruner, Norman Wolf, Lei Yan, Wolfgang Rehbein, Martin SchellFraunhofer Heinrich Hertz Institute, Germany
We present our recent advances in InP-based optical transmitter photonic integrated circuits,
developed for compact size, power efficiency and high-speed modulation. The transmitters have low
switching voltages of 2 V. Excellent BER performance is achieved up to 64 Gb/s QPSK and 107.4 Gb/s
22

25th International Semiconductor Laser Conference (ISLC 2016)

PAM8 operation.
14:20 TuC2 (Invited) – "Narrow Linewidth Tunable DBR Lasers"
Michael C. Larson
Lumentum Operations LLC, USA
Thermally tuned sampled-grating distributed Bragg reflector lasers achieve <100kHz spectral linewidth,>50dB side-mode-suppression ratio, and >17dBm fiber-coupled output power over the full C-band tomeet the demands of flex-grid wavelength-division-multiplexed coherent transmission systems.
14:50 TuC3 – "Tunable DFB Laser Array Combined by Monolithically Integrated AWG Counpler"
Toshihito Suzuki, Kazuaki Kiyota, Maiko Ariga, Yusuke Inaba, Shunsuke Okuyama, Tatsuro Kurobe
Furukawa Electric Co., Ltd., Japan
We proposed an AWG integrated tunable DFB laser array for digital coherent systems. The insertion
loss of AWG coupler optimized for 16 lasers was less than 6 dB. After SOA amplification, 100 mW
output power was obtained under SOA current of 450 mA.
15:05 TuC4 – "High Modulated Output Power of +9.0 dBm Transmitted over 80 km with L-band SOA
Assisted Extended Reach EADFB Laser (AXEL)"
Takahiko Shindo, Wataru Kobayashi, Naoki Fujiwara, Yoshitaka Ohiso, Koichi Hasebe, Hiroyuki Ishii,
Mikitaka Itoh
NTT Corporation, Japan
We successfully transmitted a high modulated output power exceeding 9 dBm over 80 km of SMF byusing an L-band extended reach EADFB laser (AXEL) without increasing the power consumption andnumber of electrical input ports compared with an EADFB laser.
15:20 TuC5 – "Monolithically Integrated Widely Tunable Narrow-Linewidth Light Source for the C+
Band Based on Quantum Dot Laser Material"
Annette Becker, Vitalii Sichkovskyi, Anna Rippien, Florian Schnabel, Johann Peter Reithmaier
Univ. of Kassel, Germany
A monolithically integrated narrow-linewidth light source was realized on InP-based quantum dot lasermaterial, which can be tuned over the whole C+ communication band and utilizes the low linewidthenhancement factor as well as the broad gain bandwidth of quasi-zero dimensional gain material.
15:35 TuC6 – "Phase Noise Study of Laser Diodes with External Optical Feedback for Digital Coherent
Communications"
Toshimitsu Kaneko, Masaaki Okamoto, Katsumi Uesaka
Sumitomo Electric Industries, LTD., JapanWe evaluated external optical feedback effect for TDA-CSG-DR tunable laser by real-time phasevariation measurements. The phase variation slower than feedback delay was significantly reduced
without imperiling laser stability and the noise level for 50-100 MHz was f17 kHz2/kHz, as anequivalent FP laser explaining.
15:50 TuC7 – "Optical Gain in GaAsBi/GaAs Quantum Well Diode Lasers"
Igor P. Marko1, Christopher A. Broderick2, Shirong Jin1, Peter Ludewig3, Wolfgang Stolz3, Kerstin Volz3,
Judy Rorison2, Eoin P. O'Reilly4, Stephen J. Sweeney1
1
Univ. of Surrey, UK, 2Univ. of Bristol, UK, 3Philipps-Universität Marburg, Germany, 4Tyndall National
Institute, Ireland
Optical gain, absorption, spontaneous emission spectra for GaAs0.978Bi0.022/GaAs laser diodes arestudied experimentally and theoretically. Internal optical losses of 10-15cm-1 and peak modal gain of23

25th International Semiconductor Laser Conference (ISLC 2016)

24cm-1 are measured at threshold. The results of calculations showed excellent agreement with theexperiment, key for future laser design.

16:05-16:25 Coffee Break
16:25-18:40

Session: Advanced VCSELs

Session Co-Chairs: Kazuhisa Uomi (Oclaro Japan, Inc.)
Tsuyoshi Yamamoto (Fujitsu Laboratories Ltd.)
16:25 TuD1 (Invited) – "Continuous Wavelength-Swept MEMS-VCSEL"
C. J. Chang-Hasnain1, P. Qiao1, K. Li1, C. Chase2, Y. Rao2, M. C.Y. Huang2
1
Univ. of California, Berkeley, USA, 2Bandwidth10 Inc., USA
In this talk, we review recent progress of monolithic, wavelength-swept vertical-cavity surface-emitting
lasers (VCSELs) and their applications. A typical electrically-pumped VCSEL consists of two oppositely
doped distributed Bragg reflectors (DBRs) with a cavity layer in between. In the center of the cavity
layer resides an active region, consisting of multiple quantum wells. Due to the short cavity length
which results in a very large longitudinal mode spacing, there is only one longitudinal mode thatlases. Lasing wavelength can be continuously swept with continuously varied cavity length. The first
generation of sweptable tunable VCSELs were demonstrated with part or entire top DBR be held by amicro-electro-mechanical structure (MEMS) and the lasing wavelength is varied by moving the MEMS
with an electric bias. Electrically-pumped, tunable VCSELs emitting at 850-nm, 940-nm, 1060-nm,
1300-nm and 1550-nm were all demonstrated. These VCSELs are demonstrated with high modulation
rate and coherent lengths, well poised for optical communications applications in datacenters, fiberto-the-home and metropolitan area networks. Recently, optically pumped tunable VCSEL has been
demonstrated with an ultrawide tuning range. In addition, new applications in optical coherence
tomography and LIDAR are particular interesting for continuously tunable VCSEL. Finally, replacing the
movable top DBR mirror by an ultra-thin high-contrast grating (HCG), the sweep rate of the tunable
VCSEL was reported to drastically increased to 1~10 MHz, which can enable many real-time 3D imaging
applications. We will discuss the design criteria, characteristics, challenges, advances and prospects ofwavelength-swept MEMS-VCSEs.
16:55 TuD2 – "GaAs High-Contrast Gratings with InGaP Sacrificial Layer for Multi-Wavelength VCSEL
Arrays"Erik Haglund1, Johan S. Gustavsson1, Wayne V. Sorin2, Jörgen Bengtsson1, David Fattal3, Åsa Haglund1,
Anders Larsson1, Michael Tan2
1
Chalmers Univ. of Technology, Sweden, 2Hewlett Packard Enterprise, USA, 3LEIA Inc., USA
We report on highly reflective suspended GaAs high-contrast gratings (HCGs) using an InGaP sacrificial
layer. A high reflectivity approaching 100% was observed both in direct reflectivity measurement andby low threshold currents in fabricated multi-wavelength HCG-VCSEL arrays.
17:10 TuD3 – "Temperature Dependence of Small Signal Response of 850 nm Transverse-CoupledCavity VCSELs"
Takashi Kondo1, Junichiro Hayakawa1, Naoki Jogan1, Akemi Murakami1, Jun Sakurai1, Xiaodong Gu2,
Fumio Koyama2
1
Fuji Xerox Co., Ltd., Japan, 2Tokyo institute of Technology, Japan
We fabricated 850 nm transverse-coupled-cavity VCSELs using 3-inch full wafer process. The
modulation bandwidth enhancement was observed in wide temperature range over 120K thanks toan optical feedback in coupled cavity. The result shows a possibility of high-speed VCSELs without any
temperature and bias control.
2425th International Semiconductor Laser Conference (ISLC 2016)17:25 TuD4 – "New Perspectives on Coherent Vertical Cavity Laser Arrays"
Stewart Fryslie, Zihe Gao, Bradley Thompson, Kent Choquette
Univ. of Illinois, USA
Coherently coupled photonic crystal vertical cavity laser arrays have been developed and studied.
Dynamic coupled mode theory is applied from the perspectives of monolithic injection locking orparity-time symmetry considerations. We find new predicted phenomena which agrees quantitatively
with theory which may enable new applications.
17:40 TuD5 – "VCSEL-Based High Resolution Wavelength Demultiplexer with Large Optical Gain"
Masanori Nakahama, Xiaodong Gu, Akihiro Matsutani, Takahiro Sakaguchi, Fumio Koyama
Tokyo Institute of Technology, JapanWe demonstrate a novel wavelength demultiplexer based on VCSEL amplifier structure, which offers
demultiplexing and amplification functions simultaneously. Its high resolution beam steering enables awavelength resolution of 0.07nm. Also, a 1mm-long device exhibited the maximum linear gain of 28dB
and saturation power of 23dBm.
17:55 TuD6 – "Strong Enhancements in Output Power and High-Speed Data Transmission
Performances by Using Parallel Oxide-Relief/Zn-Diffusion 850 nm VCSELs"
Kai-Lun Chi1, Xin-Nan Chen1, Jye-Hong Chen2, John E Bowers3, Ying-Jay Yang4
1
National Central Univ., Taiwan, 2National Chiao Tung Univ., Taiwan, 3Univ. of California, Santa Barbara,USA, 4National Taiwan Univ., Taiwan
By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW),
negligible degradation in 3-dB electrical-to-optical bandwidth (f25 GHz), and strong enhancement in
46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.
18:10 TuD7 – "980-nm Intra-Cavity Contacted VCSELs for Optical Interconnects"
Philip Moser1, Marcin Gebski2, Holger Schmeckebier1, Patrycja Spiewak2, Michal Wasiak2, James A. Lott1
1
Technische Universität Berlin, Germany, 2Lodz Univ. of Technology, Poland
We present oxide-confined 980-nm VCSELs for optical interconnects that are processed into four
different n-contact and p-contact configurations. The static and dynamic properties of the four top andbottom extra-DBR and intra-DBR contact configurations of VCSELs from the same epitaxial material arecompared and evaluated.
18:25 TuD8 – "Impact of Bonding Interface Thickness on the Performance of Silicon-Integrated
Hybrid-Cavity VCSELs"
Emanuel P. Haglund1, Sulakshna Kumari2, Erik Haglund1, Johan S. Gustavsson1, Roel G. Baets2,
Gunther Roelkens2, Anders Larsson1
1
Chalmers Univ. of Technology, Sweden, 2Ghent Univ. – IMEC, Belgium
The dependence of the performance of short-wavelength silicon-integrated hybrid-cavity VCSELs
on the thickness of the bonding interface used for the heterogeneous integration has been studied.
Performance measures investigated include the emission wavelength, thermal impedance, andvariation of threshold current and output power with temperature.

18:40-20:00 Dinner Time (on your own)

25

25th International Semiconductor Laser Conference (ISLC 2016)

20:00-22:00

Rump Session: Integrated Optoelectronics in next 50 years:
light source, platform, scale

Organaizers:

Dr. Di Liang

Prof. Nobuhiko Nishiyama(Hewlett Packard Labs,
Hewlett Packard Enterprise)(Tokyo Institute of Technology)

The information exploration in this Big Data era poses many great opportunities to tremendously lift
up the volume of integrated optoelectronics. Behind this business driver, innovation in integration
platform, scale and options to deploy the light source is likely to be a key technical driver to determine
the new technology landscape in next 50 years. In this exciting venture, silicon photonics emerges to bea new platform to challenge the dominance of the traditional compound semiconductors. But:
1. What is the best venue to monolithically integrate the efficient and reliable light source(s) in thesilicon substrate eventually? Should we continue perfecting the growth template to block thedefects, developing lattice-matched direct bandgap materials or growing active materials with muchbetter defect tolerance, e.g., quantum dot?
1a: Lattice-matched III-V material growth on Si
Professor Stephen Sweeney, University of Surrey (United Kingdom)
Dr. Stephan Wirths, IBM Research – Zurich (Switzerland)
1b: Novel/hybrid structures and growth template
Prof. Kei May Lau, Hong Kong University of Science and Technology (China)
1c: QD material, laser and commercial development
Dr. Kenichi Nishi, QD laser Inc. (Japan)
2. Considering the distinct difference between electronics and photonics in materials, operations andcontrol, should there be a "Moore's Law" to guide the photonics integrated circuits (PICs)? If yes
what does it look like?
2a: Large-scale integration in conventional InP platform
Dr. Hideki Yagi, Sumitomo Electric. (Japan)
2b: Large-scale integration in silicon
Dr. Yu Tanaka, Fujitsu (Japan)
2c: Innovative packaging technology
Dr. Hiroshi Aruga, Mitsubishi Electric. (Japan)
3. When scaling up the PICs for more functionalities, we can integrate many nanolasers or just deploy
a few master light sources and split the output into many channels. Which one is more power
efficient?
3a: Split one master laser power into multiple streams
Dr. Nobuaki Hatori, PETRA (Japan)
3b: Nanolasers (Plasmonic, nanowire)
Prof. Constance Chang-Hasnain, UC-Berkeley (USA)26

25th International Semiconductor Laser Conference (ISLC 2016)27