EUV_FEL p´xÉªð\ÉLìÈæoíÌ¤J­cSmACAnatoly FAENOVA,BCTatiana PIKUZA,BABv|

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13/19 Izhorskaya street, Moscow, 127412 RussiaFELjÌg·ÌæÉ¨¯éCtb»`EiLiFj»ÌæoíÆµÉ[O©Rdq[U[iEUV_ÄÌ«\ð]¿µCVOVbgªð\ævªªÂ\Åé±Æð¾ç©Éµ½BÜ½CLiF »ðp¢ÄC

EUV_FEL WõX|bg`óÌ¸§ªèð¨±È¢C¯ÉCLiF »ÌAu[VªN±ÁÄ¢é±Æð©¢¾µ½B1. Í¶ßÉc)î X üÉÖ·é´xÍCñ104 õq/mm2 ÅCCCDæèÍá¢ªC[WOv[gÆ¯öxÅX ü©Rdq[U[iXFELjÌvg^Cv@Æµd)éBohMbvÍ14 eV ÅCÂ_OõÅÍ´õÄ®õªißçêÄ¢éÉ[O©Rdq[U[µÈ¢B`¬³ê½FSÍÀèÅCõÅÇÝoµÄiEUV_FEL)1)Ìg·Ìæi51_61 nmjÉ¨¯éæoCÈãÉÁM·éÆFàÁ³êÈ¢BêûC400

íÆµÄÍCCCDCX ütBCC[WOv[giIPjC|^N_`÷iPMMAjCtb»`EiLiFj»ÈÇªéBeoíÌÁ¥ðärµ½àÌð Table 1 É¦µ½BTable 1 ð©éÆª©éÆ¨èCÜèL­Fm³êÄ¢È¢ªCLiF »ÉÍÈºÌæ¤ÈDê½Á¥ªa)éB½»ÌÌöàgpÅ«éÌÅC\Z`[gKÍÌåæÊvªíÆµÄàgpÅ«éBLiF É¨¯éúËüæÌL^ÌJjYÍCÈºÌÊèÅéiFig. 1 QÆjBLiF ÉúËüðÆË·éÆCi

q×É©³ê½ÇÝdqóÔiFSjª¶¬³êéBóÔªð\Í CCDi10 mmjâC[WOv[LiF ÌFSÍÂFõÆËÉæè F2 SÉæé670 nm Æ¢BöÝIÉ10 nm ð2)
F{3 SÉæé540 nm Ìuõðúo·é Buõ°÷¾ð

gi5 mmjÆä×C1`2p¢½uõÌóÔªzªèæèCúËüæªÄ¶³ê´¦é¢óÔªð\ðàÂBb)SÍÁÅµCÄgpÂ\ÉÈéBe)OaÉéÆË­xÌÑæÍñ 4i13_14 bitjéBFSÌå«³Í 1 nm ÈºÅèC§x1019 _1020

cm|3 ÜÅ`¬Å«éÌÅC10 nm ð´¦éªð\ÅæÆL­CáG¹Ìi¿æªL^³êéBðL^·é±ÆªÅ«éBµ©µC»ÝÜÅÉ¾çê½æ
Table 1Comparison of the LiF crystal detector with other conven­tional detectors
Resolution(mm)Dynamic
range (bit)Readout method

CCD`10(pixel size)

8`16Electronic,
real time acquisition

X­ray lm

`1.5(grain size)

6_8

Development{
Optical readout

Image plate(Fuji HR_S)`5(grain size)

16

Optical readout

Photoresist
PMMA

`0.01
(molecule size)

5_6

Etching{AFM

LiF crystal`0.001(defect size)

13`14

Optical readoutÍC¤Å_[U[uõ°÷¾Å250 nmCßÚê°÷¾Å50 nm ÆCgp³ê½°÷¾Ìªð\Å§À³êÄ¨èCæL^Ìªð\ÌÀEÍ¾ç©É³êÄ¢È¢B
2001NÉC^ AÌ¤ O [vªC ±Ìæ ¤ÈLiF  » Ì î X ü æ   o í Æ µ Ä Ì ·  ÉÚµ½2,3)B»ÌãCcCFaenov çÍCú{´qÍ¤J­@\iÈºC´qÍ@\jÉ¨¢ÄC[U[vY}X üÉæéævªÉ LiF »ðgpµC700 nm ðØéóÔªð\Ìææ¾É¬÷µ½4)B»ÌãC´qÍ@\Ì FaenovC Íàç ÍC LiF »ð p¢ ½æ vªÉ æèC´qÍ@\ X ü[U[i13.9 nmC7 psjÌWõX|bgavª5) CAu[VÀ±6)É¬÷µÄ¢éB³çÉC´qÍ@\Ì¼ÑCÁ¡çÍCLiF »Éæé308  úËõ Sept. 2010 Vol.23 No.5
(C) 2010 The Japanese Society for Synchrotron Radiation ResearchEUV SASE_FEL pÌWJ ¡ EUV_FEL p´xÉªð\ÉLìÈæoíÌ¤J­

Fig. 2 Experimental setup for recording a sample image of the EUV_FEL on a LiF crystal.

Fig. 1(a) Energy level diagram for LiF crystal, (b) Absorption(upper) and emission (bottom) spectra for F2 and F3 colorcenters, (c) Photo luminescence patterns from the color cen­ters in LiF were observed using a confocal uorescence laser
microscope. A 488 nm Ar laser has been used in the micro­
scope to excite both CCs, which then emit luminescence inthe spectral range of 500_800 nm with the peaks at 530 nm
for F2 and 670 nm for F{3 , respectively.

«qævªðÀ{µC¤F«q¹ðp¢Äù¶ÌvFig. 3(a) Readout image of 1500 lpi mesh (Single shot), obtainedby using unfocused EUV_FEL and LiF crystal. Detailed
readout images of the mesh obtained at the edge (b) and thecenter (c) of EUV_FEL beam. (d) and (e) Intensity prolesof the mesh images.

ªíðãñéñ 5 mm ÌóÔªð\ÅC«qæÌL^É¢EÅßÄ¬÷µ½7)BãLÌ±Æ©çCLiF »ª EUV_FEL ÉÎµÄ\ªÈ´xðÄÎCÉßÄLpÈævªc[ÆÈè¤é±ÆÍ¾ç©ÅP EUV_FEL ðp¢½CéBäXÍCò[WOÀ±ð¨±È¢CLiF »ª EUV_FEL ÌVOVbgÉÎµÄà\ªÈ´xðLµÄ¢é±ÆðQ LiF »ðp¢ÄCEUV_FEL r[mFµC³çÉCòCÌWõVXeÉæÁÄWõ³ê½ EUV_FEL
ÌWõX|bg`óÌªèC¨æÑCAu[VÀ±ÉLiF oíÍCEUV_FEL ÌVOVbgÅà\ªÈ´xðL·éB
ÉEUVFEL õÌóÔRq[XÍCÉßÄæ¢Br[SÌiq20 mm öxjÉnÁÄCbV
Wp^[ªÏª³êÄ¢éB
É±ÌÏªðsÁ½ÊuÅÌ EUVFEL Ìr[aÍC9.0~8.4 mmi¼lSjÅðsÁ½ÌÅÈºÉñ·éB

2.1.2

2. À±ÊÌtéB

_Ci~bNWÌ]¿C¨æÑC¶Ì¨¿ÌC[WO800 nm úÌ Al tB^[ð¸çµÈªç 5 dË½2.1

LiF »ÉæéC[WOÀ±^[Qbgð§ßµÄ«½ EUV_FEL ð LiF »ðp¢À±ÌTª}ð Fig. 2 É¦·BWõµÄ¢È¢óÔÌ
EUV_FEL Æ LiF »Æðp¢ÄCà®bVâà®

Äoµ½BFig. 4(a)ÍCEUV_FEL g·61 nm ÌÉæ¾µ½C[Wi12,000VbgÏZjÅ

éB800 nmC¶Ì¨¿ÌC[WOÀ±ðsÁ½B

úÌ Al tB^[ 5 ÌdÈèðæÊÅ«Ä¨èCLiF

2.1.1

»Ì_Ci~bNWÍC104_105 öx

EUV_FEL ÌóÔRq[XªzvªFig. 3 ÉCLiF »ðp¢Äæ¾µ½à®bV

iÔ

u344 mmCCa18.5 mmjÌVOVbgC[é±Æª¾ç©ÆÈÁ½BÜ½CFig. 4(b)É¦·æ¤ÉCwÌ
iq2_3 mmjÌ\¢ðVOVbgÅÏ@µCãÉWð¦µ½iEUV_FEL g·61 nmjB±ÌC[WÌðél¨ðßç¦é½ßÌgmhÌÏªÉ¬÷µ½BÍ©çCÈºÌ±Æª¾ç©ÆÈÁ½BÈãÌÊèCEUV_FEL Æ LiF »Æðp¢½¨¿ÌúËõ Sept. 2010 Vol.23 No.5  309

Fig. 4(a) Readout image of ve layers of 800­nm thick Al foil
(12,000 shots accumulation), and (b) readout image ofspider web (single shot).

Fig. 5(a) Experimental setup for recording the beam patterns near
the best focus position of the EUV_FEL on a LiF crystal.
(b) Beam patterns recorded on LiF at |5 mm to {5 mmfrom the calculated focus position.

C[WOÀ±ðÀ{µCEUV_FEL ðWõµÈ¢óÔÅàCLiF »ÉæéVOVbgævªªÂ\Åé±Æð¾ç©Éµ½B2.2

EUVFEL ÌWõX|bg`óÌ¸§ªè

XFEL Ìæ¤È­ÍÈ[U[ÉÎ·é³mÈWõ­xÌ]¿ÍCXFEL ðp¢½lXÈp¤ðs¤ãÅLvÅéBWõ­xÌ]¿ÉÍCWõX|bgaC[U[GlM[CpXÈÇÌîñªKvÅéBÂõÌæÌ­x[U[p¤É¨¢ÄÍC´qÍ@\Fig. 6

Image of the best focused spot measured by the AFM.

ÌÔHçªCgÊâõwnðp¢½¸§ÈWõ­xÌõwvªÆ¨À±©ç¾çê½Wõ­xÆÌärðs¢C¼ÒÔÉæ¢êvð©¢¾µÄ¢é8)Bµ©µCÀÛÌÀÉæè LiF úËüoíÌ\ÊÉJ[Z^[ª¶¬±ÅÍC[U[õÆvY}ÆÌñü`ÝìpÉæèµCWõX|bg`óªL^³êéBªè³ê½X|bg

WõX|bgaC[U[GlM[CpXÆà­x`óÍC[U[uõ°÷¾ðp¢ÄCCCD JÅæs[NtßÅÏ»·é½ßCêÊIÉ¼ÒÍêvµÈ¢BÆµÄÇÝoµð¨±ÈÁ½BÂÜèC^óÅÌWõ­xÆi¨¿ÆÝìpµÄ¢éjvY}ÅÌWõ­xÆÍÙÈÁÄ­éÌªíÅ
À±ÆV~Fig. 5(b)É©çêéæ¤ÉCX|bg`óÉÍû·ÉæèCécÝª©çêé±Æª¾ç©ÉÈÁ½BÜ½C[U[[VÆÌärðs¤ÛÉÍCÁÉC±ª­­Wõ³êÄ¢éÌæÌ`óªCf0`{3 mm Én

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õµÄ¢½Æl¦çêéB±êçÌÊÍCgVbgàmêÈ¢B±Ì½èÍCXFEL À@ÉæéÀ±ª¾

ðp¢½ªèuACg¾¯ÅÍ\ªÅÈ­CÀÛç©ÉµÄ­êéÅë¤B¢¸êÉµëC^óÅÌXFEL ÌX|bgaÌ³mÈ]¿ÍCXFEL p¤ðÌWõr[Ìp[§xðvªµÈªçCWõ_ÖÌÊu¹ªÂ\ÈªèuÌ²®@\ªKvÅé±Æð¦WJ·éãÅC­±ÆÌoÈ¢p[^Ì 1 ÂÅµÄ¢éBÜ½CFig. 6 É¦·æ¤ÉWõX|bgÌSéBäXÍCEUV_FEL r[CÌWõVXetßÅÍ LiF »ÌAu[VªN±ÁÄ¢é±Æðp¢ÄCLiF »ÉæéCVOVbgÅÌWõX|bg`óÌ¸§ªèð¨±È¢C¯ÉCLiF »ÌAu[VªN±ÁÄ¢é±Æð©¢¾µ½B
2.2.1

WõX|bg`óÌ¸§ªèÀ±ÌTª}ð Fig. 5(a)É¦·BLiF úËüoíðWð¦´·éVOiª¾çê½B
LiF »Ì[U[ÉæéAu[VÍC±êÜÅÉ¢­Â©ÌO[vÉæè¤ªsíêÄ¢é6,9,10) B±êçÉæéÆC[U[g·C[U[pXÆàZ¢ûªCAu[VÌlªá­ÈéXüÉ

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EUV_FEL Ìg·ÌæÅÍC¨¿ÆÌÝìpÉ¨¢ÄCÓ«{¤ÍCX ü©Rdq[U[væ¯i{É[U[õÉæé´qÉªqÌ¼ÚCI»iglCI»jÆÆàÉCõzûÉæé½õqCI»pO[vÆÌ¤¯¤ÅsíêÜµ½BÜ½CSCSS ±Á¬í^]O[vÆÌ¦ÍÉ´Ó¢½µÜ·Bª¬ÝµÄN±éCQl¶£

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]¿·é±ÆÅCEUV_FEL Æ¨¿ÌÝìpÉÖ·é ÒÐî cSmú{´qÍ¤J­@\ Êqr[p¤å [U[ì®±qü¤O[v ¤å²E­mail: fukuda.yujijaea.go.jpêåF[U[vY}¨mªðn
1993Nc`måwHw»wÈ²
ÆC1998Nåwåw@wn¤È»wêUmÛöC¹CwmBÈwZpU»Æcm¤õÈÇðoÄC
2001Nú{{´qÍ¤m¤õC2009NæèC»EBTatiana Pikuz

VAÈwAJf~[ ·Èw¤åC¤õ
ú{´qÍ¤J­@\ µÖ¢¤õE­mail: tapikuzyahoo.comêåFX üõwmªðn
1979NoE}XNHÈåwCm
ÛöC¹C1993NVA§¤½¿CIXyNgf[^Z^[åC¤õC2001NoE}XNHÈåwÉÄmæ¾CHwmB2006
Næè»EC2007Nú{´qÍ¤J­@\µÖ¢¤õB

Anatoly FaenovVAÈwAJf~[ ·Èw¤åÈ¤õ
ú{´qÍ¤J­@\ Êqr[p¤å T[`tF[E­mail: anatolyfhotmail.com
êåFX üªõwmªðn1973NXNåw¨wÈCmÛö
C¹C1977N\rGgÈwAJf~[xft¨w¤ÉÄmæ¾CHwmB1984NVA§¤½¿CIXyNgf[^Z^[·C2006Næè»EC2007Nú{´qÍ¤J­@\T[`tF[BúËõ Sept. 2010 Vol.23 No.5  311

High­sensitive, high­resolution, andwide­eld­of­view image sensor for EUV_FELYuji FUKUDAA, Anatoly FAENOVA,B, Tatiana PIKUZA,BAKansai Photon Science Institute, Japan Atomic Energy Agency,

8_1_7 Umemidai, Kizugawa, Kyoto, 619_0215 Japan

BJoint Institute for High Temperatures, Russian Academy of Sciences,

13/19 Izhorskaya street, Moscow, 127412 Russia

Abstract We have characterized the performance of LiF crystal as an imaging sensor for extreme ultraviolet
free electron laser (EUV_FEL). We found that the LiF crystal could register a single shot image of various
materials in a wide eld of view with high spatial resolution and high dynamic range. Detailed structure offocused spot image of single shot EUV_FEL was measured using the LiF crystal. It is found that a crater ap­
pears on a surface of LiF in one shot.

312  úËõ Sept. 2010 Vol.23 No.5