Datasheet

NP15P04SLG-40V – -15A – P-channel Power MOS FETApplication : Automotive

R07DS1509EJ0100

Rev.1.00
May. 20, 2022

Description
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.

FeaturesSuper low on-state resistance : RDS(on) = 40 m Max. ( VGS = -10 V, ID = -7.5 A )RDS(on) = 60 m Max. ( VGS = -4.5 V, ID = -7.5 A )Low input capacitance : Ciss = 1100 pF Typ.
Built-in gate protection diode
Designed for automotive application and AEC-Q101 qualified.
Pb-free (This product does not contain Pb in the external electrode)

Outline
4DrainGate
123

1. Gate
2. Drain
3. Source
4. Drain(Fin)MP-3ZK (TO-252)

SourceEquivalent circuit

Absolute Maximum Ratings(Ta=25°C)
Item

SymbolRatings

Unit

Drain to Source Voltage (VGS = 0 V)

VDSS

-40

V

Gate to Source Voltage (VDS = 0 V)

VGSS

20V

Drain Current (DC) (Tc = 25 °C)

ID(DC)

15A

Drain Current (pulse)ID(pulse) Notes1

45A

Total Power Dissipation (Tc = 25 °C)

PT130W

Total Power Dissipation (Ta = 25 °C)

PT2

1.2

W

Channel Temperature

Tch

175°C

Storage Temperature

Tstg-55 to 175°C

Single Avalanche Current

IASNotes216A

Single Avalanche Energy

EAS Notes225mJNotes 1. PW  10 s , Duty Cycle  1%
2. Starting Tch=25℃ , VDD = -20V , RG = 25  , VGS = -20  0V , L = 100H

R07DS1509EJ0100 Rev.1.00
May.20.2022

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NP15P04SLG

Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal ResistanceRth(ch-c) Notes3
Rth(ch-a) Notes3

5.0
125°C/W°C/W

Electrical Characteristics(Ta=25°C)
Item
Zero Gate Voltage Drain Current

SymbolMinTypMax

UnitIDSS——-10

A

VDS = -40 V, VGS = 0 V

Test Conditions
VGS =  20 V, VDS = 0 V

Gate Leakage Current

IGSS——10

A

Gate to Source Threshold Voltage

VGS(th)-1.0-1.6-2.5

V

VDS = VGS, ID = -250 A

Forward Transfer Admittance| yfs | Notes4

612—S

VDS = -10 V, ID = -7.5 A

Drain to Source On-state ResistanceRDS(on)1 Notes4—3140mVGS = -10 V, ID = -7.5 A

RDS(on)2 Notes4—

3860m

VGS = -4.5 V, ID = -7.5 A
VDS = -10 V

Input Capacitance

Ciss

—

1100—

pF

Output Capacitance

Coss

—

190—

pF

VGS = 0 V

Reverse Transfer Capacitance

Crss—

140

—

pF

f = 1 MHz

Turn-on Delay Timetd(on)—7—ns

VDD = -20 V

Rise Timetr

—

5—

ns

ID = -7.5 A

Turn-off Delay Timetd(off)

—

100—

ns

VGS = -10 V

Fall Timetf

—

65—

ns

RG = 0 Total Gate Charge

Qg

—

23—

nC

VDD = -32 V

Gate to Source Charge

Qgs

—3—

nC

VGS = -10 V

Qgd

—7—nC

ID = -15 A

VF(S-D) Notes4

—

0.94

1.5

V

IF = -15 A, VGS = 0 V

Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Timetrr

—32—

ns

IF = -15 A, VGS = 0 V

Reverse Recovery Charge

Qrr

—33—

nCdi/dt = -100 A/s

Note 3. Designed target value on Renesas measurement condition. Not subject to production test.
4. Pulse test.

R07DS1509EJ0100 Rev.1.00
May.20.2022

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NP15P04SLG

Typical CharacteristicsR07DS1509EJ0100 Rev.1.00
May.20.2022

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NP15P04SLG

R07DS1509EJ0100 Rev.1.00
May.20.2022

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NP15P04SLG

R07DS1509EJ0100 Rev.1.00
May.20.2022

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NP15P04SLG

Test Circuit
Avalanche
Test Circuit

Waveform

ID

VDD
RG

D.U.T.

V(BR)DSS

IAS

L

VDS

VDD

VGS

V(BR)DSSEAS = 1 ・L・IAS2・2
V(BR)DSS - VDD

Switching Time
Test Circuit

Waveform
90%

RL
VGS
RG

D.U.T.

VDD

VDS

10%
90%

90%
10%

10%

VGS

td(on)

td(off)

trtf

Gate Charge
Test Circuit

Waveform
VDSRL
IG

D.U.T.

VDD

VGS

Qg

VGS
Qgs

Qgd

Reverce Recovery
Test Circuit

Waveform
IFIF

D.U.T.
L
RG

trr0di/dt

Qrr

VDD

VGS

R07DS1509EJ0100 Rev.1.00
May.20.2022

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NP15P04SLG

Package Dimensions
2.3 ± 0.1

6.5 ± 0.2

0.5 ± 0.1

5.1

1.0

4.3 Min.

0.8

30.51 Min.

Pin No.
1210.4 Max. (9.8)

6.1 ± 0.2

4.0 Min.

41.14 Max.

0 to 0.25

0.76 ± 0.12
2.3

0.5 ± 0.1

2.3
1.0
Unit : mm
Mass : 0.3g

Ordering Information
Part No.
NP15P04SLG-E1-AY

RemarkQuantity
2500pcs/reel

Shipping container
TapingStrong electric field, when exposed to this device, can cause destruction of the gate oxide
and ultimately degrade the device operation. Steps must be taken to stop generation of
static electricity as much as possible, and quickly dissipate it once, when it has occurred.

R07DS1509EJ0100 Rev.1.00
May.20.2022

Page 7 of 7

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