September 23rd (MON)10:00 - 10:30

Session 1 : Opening Session

Session 2 : Plenary Session
10:30 - 11:10

PL1

Japanese Equipment Manufacturers’ Contribution to Ion Implantation for Semiconductor
Device Fabrication
Nobuo Nagai (Nissin Ion Equipment Co., Ltd., Japan)

11:10 - 11:50

PL2

Overview on Power Devices with Special Regard to Ion Implantation
Werner Schustereder (Infineon Technologies Austria AG, Austria)

12:00 - 13:00

Luncheon Seminar -TPSCo

Session 3 : Device Applications
13:30 - 14:00

INV1

Reducing Transistor External Resistance (Invited)
Oleg Gluschenkov (IBM, USA)

14:00 - 14:30

INV2

Nanosheets and CFETs Enabled by Epi Doping (Invited)
Chee-Wee Liu (National Taiwan University, Taiwan)

14:30 - 15:00

INV3

Stress Engineering TCAD for Advanced Logic Architectures (Invited)
Geert Eneman (imec, Belgium)

15:00 - 15:20

O1

Oxidation of Si/SiGe Fin Superlattices and Application to Bulk Acoustic
Kevin Jones (University of Florida, USA)

15:20 - 15:50

Coffee BreakSession 4 : Doping Equipments (1)15:50 - 16:20

INV4

Implant Application to Meet Advanced Power Device Requirement (Invited)
Wei Zou (David) (Applied Materials, USA)

16:20 - 16:40

O2

IMPHEAT-II:In-situ XRD System, Enhancement of Implantation Angle Accuracy
through Per-Wafer Measurement of Off-Axis Angle for Channeling Implantation
Yuya Hirai (Nissin Ion Equipment Co., Ltd., Japan)

16:40 - 17:00

O3

Challenges in High Temperature Handling and Process of SiC Substrate and Key
Innovations to Improve Performance and Enable Higher Yields and Transition toLarger Substrate Size
Pratim Palit (Applied Materials, USA)

17:00 - 17:20

O4

A Sophisticated Model for the Space Charge EffectMitsuaki Kabasawa (Sumitomo Heavy Industries Ion Technology Co., Ltd., Japan)

17:20 - 17:40

O5Radiation Characterization and Mitigation of High Energy H+ Beams
Peter DeRosa (Axcelis Technologies, USA)17:40 - 18:00

O6

Integration of Thermal Pyrolytic Graphite (TPG®) into Heaters for Improved Thermal
Uniformity
Wei Fan (Momentive Technologies, USA)Poster Session
18:00 - 20:30

P1

High-Energy Channeling Implantation in SiC Substrates with Precise Angle Controlof SS-UHE
Akichika Ono (Sumitomo Heavy Industries Ion Technology Co., Ltd., Japan)

P2

Investigation of Modification Process of SiNx Film by a Gas Cluster Ion Beam
IrradiationMasaya Takeuchi (University of Hyogo, Japan)

P3

Comparison of Arsenic and Antimony Dopant Distribution Profiles of Very HighEnergy Implantations
Serguei Kondratenko (Axcelis Technologies, USA)

P4

Tellurium Implanted Si for Infrared Optoelectronics
Lars Rebohle (Helmholtz-Zentrum Dresden-Rossendorf & Helmholtz Innovation BlitzLab,Germany)

P5

Process Methodology for Flash Yield Improvement with Customized Wafer Dose
Patterning
Sylvain Joblot (STMicroelectronics, France)

P6

Off-Axis Electron Holography for the Probing of Doped Layers in Semiconductor
DevicesSamuel Grenadier (Tower Semiconductor, USA)

P7

Characterization of Aluminum and Nitrogen Implants into Silicon Carbide Using
Fourier Transform Infrared Spectroscopy
Jeremy Turcaud (Coherent Corp., USA)

P8

Energetic and Surface Metals Characterization of Purion XEmax with and without
BoostTM Technology Using VPD ICP-MS
Olivia Campbell (Axcelis Technologies, USA)

P9

Process-Induced Stress Characterization in SiC MOSFETs by Raman Spectroscopy
Tomoyuki Uchida (Toray Research Center Inc., Japan)

P10High Re-Activation and Precise Diffision Control of Epitaxial Si:P Layers Using FlashLamp Annealing
Yuma Ueno (SCREEN Semiconductor Solutions Co., Ltd., Japan)

P11

Plasma Enhanced Annealing Process for Ion Implanted Dopant Activation
Amitabh Jain (Microsol Technologies Inc., USA)

P12

Au-Free Non-Alloy Ohmic Contact Formation on Si implanted n+ GaN activated by UV
Laser Annealing
Lu Lu (SCREEN-Laser Systems & Solutions of Europe (LASSE), France)

P13

Ion Doping System iG8 for Generation 8 Flat-Panel Display Industry
Kazuki Kawase (Nissin Ion Equipment Co., Ltd., Japan)

P14

Applied Materials VIISta™ Trident™ XE Ion Implanter
Eric Hermanson (Applied Materials, USA)

P15

Angle Control on Ribbon Beams on Applied Materials Trident™ Ion Implanters
Antonella Cucchetti (Applied Materials, USA)

P16

Observation of Angle Fluctuation Utilizing Plane Channel
Takuya Sakaguchi (Sumitomo Heavy Industires Ion Technology Co., Ltd., Japan)

P17

Dose Matching at High Tilt Angle by Off-Axis Implantation
Sho Kawatsu (Sumitomo Heavy Industries Ion Technology Co., Ltd., Japan)

P18

Adverse Effect of Energetic Dopant Cross-Contamination on Sheet Resistance
Shoma Handa (Sumitomo Heavy Industries Ion Technology Co., Ltd., Japan)

Poster Session
18:00 - 20:30

P19

Challenges of High Dose Ion Implantations in Photo-Resist Covered Wafers for Power
Device Processing
Matthias Schmeide (Infineon Technologies Dresden GmbH, Germany)

P20

Horizontal Uniformity Improvements by Using Beam Corrected Profiles on the VIISta
900/3D
Matthias Schmeide (Infineon Technologies Dresden GmbH, Germany)

P21

Low Metals Ion Source
Vladimir Romanov (Axcelis Technologies, USA)

P22

Optimization of Ion Source Structure for Enhancing Beam Current of Multiply
Charged Ions
Kuwahara Daisuke (Sumitomo Heavy Industries Ion Technology Co., Ltd., Japan)

P23

Dual Cathode Ion Source for Axcelis’ High Energy Implanters
Wilhelm Platow (Axcelis Technologies, USA)

P24

Effect of Low Z Gas Mixing for Producing Multicharged Ions on an Electron Cyclotron
Resonance Ion Source
Yushi Fujimura (The University of Osaka, Japan)

P25

Development of an Ion Implantation System for Isotopically Pure Ion Deposition
Josh Bird (University of Surrey, England)

P26

New Operation Method for Ion Source Parameters to Improve Single Ionization
Efficiency
Hiroaki Kai (Nissin Ion Equipment Co., Ltd., Japan)

P27

Attempt to Generate Copper Ions Using the Vaporizer Method
Ninomiya Shiro (Sumitomo Heavy Industries Ion Technology Co.,Ltd., Japan)

P28

Production Experience Using Indium(I) Iodide as a Source Material for Vaporization
Operation in a Medium Current Implanter
Ronald Johnson (Microchip Technology Inc., USA)

P29

Results of an Evaluation of Isotopically Enriched Boron Trifluoride ION-X® on a Medium
Current Implanter
Ronald Johnson (Microchip Technology Inc., USA)

P30

Improving Beam Current and Performance in Boron Ion Implantation via Boron
Trifluoride (BF3) and Diboron Tetrafluoride (B2 F4) Mixture
Ying Tang (Entegris Inc., USA)

P31

Assessment of Different Methods for Hydrogen Delivery to Improve Ion Implant Tool
Productivity
Joseph Despres (Entegris, USA)P32

Xe Sub-Atmospheric Pressure Storage and Delivery Cylinder System
Paul T. Murphy (TAKACHIHO CHEMICAL INDUSTRIAL CO., LTD., Japan)

P33

Space Charge Neutralization System for Low-Energy High-Current Implanter
Taido Kurauchi (Nissin Ion Equipment Co., Ltd., Japan)

P34

Effect of Gas Introduction for Beam Neutralization on Beam Transport for Different
Ion Species
Yusuke Kuwata (Nissin Ion Equipment Co., Ltd, Japan)

P35

Measurement of Phase-Space Distributions with Varied Parameters of an IndirectlyHeated Cathode Ion Source
Yugo Saito (Sumitomo Heavy Industries Ion Technology Co., Ltd., Japan)

Poster Session
18:00 - 20:30

P36

Development of Automatic Wafer Transfer Adapters for Thin and Small Diameter
Wafers of SiC and GaN
Yoshitake Kazuya (Sense Corporation, Japan)

P37

Modification of the End Station of a Varian 350 D Implanter for Greater Flexibility
Volker Haeublein (Fraunhofer IISB, Germany)

P38

Wear-Resistant Surface Coatings for Long ESC Life and Stable Performance
Robert Fryer (Axcelis Technologies, Inc., USA)

P39

Wafer Cooling Optimization in Ion Implant Process through Advanced Electrostatic
Chuck Design
Jakub Rybczynski (Entegris, Inc., USA)

P40

Polymeric Wafer Contact Surface Integrity and Uniformity of Electrostatic Chuck:
Characterization and Potential Impact on Ion Implant ProcessYuxuan Liu (Entegris, Inc., USA)

P41

Self-Contained Predictive Diagnostic Sensors for Implanter Subsystems
Scott Galica (Axcelis Technologies, USA)

September 24th (TUE)
Session 5 : Doping Technologies and Processes (1)9:30 - 10:00

INV5

Toward Eliminating SiC Bipolar Degradation by Stacking Fault Knockdown by HighEnergy Ion Implantation (SF-KHII) Method (Invited)
Shunta Harada (Naogya University, Japan)

10:00 -10:20

O7Utilizing PLAD (Plasma Doping) for Next Generation Super-Junction Power Devices
Vikram Bhosle (Applied Materials, USA)

10:20 - 10:50

Coffee BreakSession 6 : Doping Technologies and Processes (2)10:50 - 11:20

INV6

Advanced Processes and Applications of Thin Layer Transfer via Light Ions
Implantation (Invited)
Frédéric Mazen (CEA-Leti, France)

11:20 - 11:40

O8

PMOS Rc Reduction Using B2 H6 Plasma Doping Process and Advanced
Anneals for Current and Next Gen DRAM Devices
Vikram Bhosle (Applied Materials, USA)11:40 - 12:00

O9Process Challenges of the STRASS Technique to Increase the Electron Mobility in
Advanced FDSOI nMOSFETs
Frederic Milesi (CEA-Leti & Université Grenoble Alpes, France)

12:00 - 12:20

O10

Effects of Ar-Ion Implantation on Single and Dual-Gate PNBT SOI-FETs
Ryotaro Ito (Kanazawa Institute of Technology, Japan)

12:30 - 13:30

Luncheon Seminar - AMAT

14:00 -Excursion

September 25th (WED)
Session 7 : Doping Technologies and Processes (3)9:30 - 10:00

INV7

New Challenges and Opportunities in WBG Materials with Ion Implantation andAnnealing Co-optimization (Invited)
Fulvio Mazzamuto (Axcelis Technologies, Inc., USA)

10:00 - 10:20

O11Study of Excess Donor-Like Defects Introduced by Si-Ion Implantation andSubsequent Annealing in N-Type Homoepitaxial GaN Layers
Hiroko Iguchi (Toyota Central R&D Labs., Inc., Japan)

10:20 - 10:40

O12Mg Ion Implantation in GaN for Localized p-GaN Layer Fabrication and Advanced
Characterization Methods for Defects and Activation Study
Frank Torregrosa (IBS, France)

10:40 - 11:10

Coffee BreakSession 8 : Doping Technologies and Processes (4)11:10 - 11:40

INV8

Creation of Multiple Nitrogen-Vacancy Spin Cubits in Diamond by Molecular Ion
Implantation (Invited)
Takeshi Ohshima (QST Takasaki, Japan)

11:40 - 12:00

O13

Noncontact and Nondestructive Measurements of Electrical Properties for Mg IonImplanted Layers on GaN Single Crystals Using THz Time-Domain Spectroscopic
Ellipsometry
Dingding Wang (Ritsumeikan University, Japan)

12:00 - 12:20

O14

Versatile Monitoring of Ion Implantation Processes in Si and SiC Wafers
Using the PMR-C TechniqueLaszlo Balogh (Semilab Co Ltd, Hungary)

12:30 - 13:30

Special Luncheon Lecture - History of Semiconductor Devices and Their FutureHiroshi Iwai (International College of Semiconductor Technology & National Yang Ming Chiao TungUniversity, Taiwan)

Session 9 : Annealing Technologies and Processes (1)14:00 - 14:30

INV9

Thermal Processing in Semiconductor Implant Annealing: A Historical andTechnological Evolution (Invited)
Silke Hamm (Mattson Technology, Germany)

14:30 - 14:50

O15

Pulsed Laser Annealing of Deposited Amorphous Carbon Films
Kevin Jones (University of Florida, USA)

14:50 - 15:10

O16

Solid-Phase Epitaxial Regrowth of Si:P by Nanosecond Laser Annealing : A NovelApproach
Sebastien Kerdiles (Université Grenoble Alpes, France)

15:10 - 15:30

O17

Recrystallization Kinetics of Fully Amorphized C 3H 5 -Molecular-Ion-Implanted Silicon
Substrate Surface
Kobayashi Koji (SUMCO CORPORATION & Okayama Prefectural University, Japan)

15:30 - 16:00

Coffee BreakSession 10 : Doping Equipments (2)16:00 - 16:20

O18

Performance of an Aluminum Sputtering Source for High Current Doping in Power
DevicesMichael Ameen (Axcelis Technologies, USA)

16:20 - 16:40

O19

IMPHEAT-II A Novel Ion Source with Extended Lifetime and Wide Beam Current
Dynamic Range for SiC Power Device Mass Production
Yuta Iwanami (Nissin Ion Equipment Co, Ltd., Japan)

16:40 - 17:00

O20

Novel Vaporization Method for Gallium Ion Generation
Ninomiya Shiro (Sumitomo Heavy Industries Ion Technology Co.,Ltd., Japan)

17:00 - 17:20

O21

High Current Metal Ion Source for Material Modification in the Semiconductor
Manufacturing Processes
Takeshi Matsumoto (Nissin Ion Equipment Co, Ltd., Japan)

17:20 - 17:40

O22

Plasma and Beam Modeling in Low-Temperature Plasma Ion Sources
Seth Veitzer (TECH-X CORPORATION, USA)17:40 - 18:00

O23

The Importance of Global Magnetic Topology in Ion Source DesignThomas Horsky (Plansee USA, USA)

September 26th (THUR)
Session 11 : Metrologies and Material Science
9:30 -9:50

O24

Using Plan-View Cathodoluminescence to Estimate Damage Depth in Ion-Implanted
β-Ga2O3Ryuichi Sugie (Toray research center Inc., Japan)

9:50 - 10:10

O25

RBS-Based Channeling Proton Implantation in 4H-SiC: A Combined SIMS/DLTS Depth
Profiling Study
Orazio Samperi (University of Catania, Italy)

10:10 - 10:30

O26

Etching Monitoring of Advanced Forksheet Devices Using AKONIS SIMS Tool
Makishi Ishikawa (CAMECA Japan, Japan)

10:30- 10:50

O27

Differential Hall Analysis of the Carrier Profile in Germanium Due tothe Doping Effect of As-Implanted Boron
Ruey Dar Chang (Chang Gung University, Taiwan)

10:50 - 11:20

Coffee BreakSession 12 : Doping Technologies and Processes (5)11:20 - 11:50

INV10

Proximity Gettering Design of Silicon Wafers Using CH2 P Molecular Ion Implantation
Technique for High-Sensitivity CMOS Image Sensors (Invited)
Takeshi Kadono (SUMCO CORPORATION, Japan)

11:50 - 12:10

O28

Characterization of Low Energy Molecular Phosphorus Implant under Low Thermal
Budget Anneal
Tae Hoon Huh (Sumitomo Heavy Industries Ion Technology Co., Ltd., Japan)

12:10 - 12:30

O29Fe Gettering Behavior in Proximity Gettering Silicon Epitaxial Wafer Using SiHx andC2 Hy Mixture Molecular Ion Implantation
Ryo Hirose (SUMCO CORPORATION, Japan)

12:40 - 13:40

Luncheon Seminar

Session 13 : Annealing Technologies and Processes (2)14:00 - 14:30

INV11Flash Lamp Annealing for Semiconductors and Related Materials (Invited)
Lars Rebohle (Helmholtz-Zentrum Dresden-Rossendorf & Helmholtz Innovation BlitzLab,Germany)

14:30 - 14:50

O30

Understanding Nanostructures Formation on Si Surfaces at the Melting Threshold byLaser Annealing
Mathieu Opprecht (Université Grenoble Alpes & CEA-Leti, France)

14:50 - 15:10

O31

Improving the Thermal Stability of Ni(GeSn) Alloys Using Pre-Amorphization byImplantation and Nanosecond Laser Annealing
Philippe Rodriguez (CEA-Leti, France)

15:10 - 15:30

O32

Influence of Carbon Capping Material and Thickness during High Temperature
Annealing on Surface, Defects and Dopant Profile in SiC
Jeremy Turcaud (COHERENT CORP, USA)

15:30 - 16:00

Coffee BreakSession 14 : Doping Equipments (3)16:00 - 16:20

O33

Validation of Three-Dimensional Simulation of Beam Transport Using Linear
Accelerator Based on Measured Phase-Space Distributions
Yuma Hirai (Sumitomo Heavy Industries Ion Technology Co., Ltd., Japan)

16:20 - 16:40

O34

Molecular Ion Beam Current Enhancement by Noble Gas Mixed Discharge
Naoki Miyamoto (Nissin Ion Equipment Co., Ltd., Japan)

16:40 - 17:00

O35

A Two Wafer Experimental Design for Determining Angular Alignment of Linear Scan
Batch Implanters
Jeremy Turcaud (COHERENT CORP, USA)

17:00 - 17:20

O36

Machine Learning Based Beam Shape Controlling System on NISSIN Medium Current
Ion Implanter
Shinya Takemura (Nissin Ion Equipment Co., Ltd., Japan)

17:30 - 18:30

Session 15 : Closing Session