PRELIMINARY
Notice : This is not a final specification
Some parametric are subject to change.

INKE111BC1DESCRIPTION

Built-in Zener DiodeMOS field-effect transistor
Silicon N-channel

OUTLINE DRAWING

INKE111BC1 is a silicon N-channel MOS transistors withbuilt-in Zener diode , and small package.

UNIT：mm
2.8
1.5

0.65

0.65

0.4

0.95

②0.13

③0.8

APPLICATION

①1.9
1.1

2.8・Low on Resistance.
RDS(ON)=1.5Ω(TYP) @ID=250mA,VGS=3.2V
RDS(ON)=1.1Ω(TYP) @ID=500mA,VGS=4.0V
RDS(ON)=0.7Ω(TYP) @ID=500mA,VGS=10V
・High speed switching.
・Drive voltage 4V・Built-in Zener diode between drain and source.
・Small package for High-density packaging.

0.95

FEATURE

0～0.1

High speed switching, analog switching, and others.

TERMINAL CONNECTER①：GATE②：SOURCE③：DRAINJEITA：SC-59
JEDEC：Similar to TO-236

MAXIMUM RATINGS (Ta=25℃)
SymbolVGSSID
IDP

Parameter
Gate-Source Voltage
Drain Current(DC) ※1
Drain Current(Pulse) ※2

PD

Total Power Dissipation

IAV
EAVTchTstg

Avalanche Current ※3,4
Avalanche Energy ※3,4
Channel Temperature
Storage Temperature

Rating±200.51.5200450※11.01.0+150-55～+150

Unit
VAAmWmW
AmJ℃℃※1：Package mounted on glass-epoxy substrate（19mm×45mm×1mm）※2：PW≦1ms，Duty≦1%※3：Consecutive pulses PW≦10μs，Duty≦1%※4：L=1mH

EQUIVALENT CIRCUITDMARKING

K・J

GS

PRELIMINARY
Notice : This is not a final specification
Some parametric are subject to change.

INKE111BC1

Built-in Zener DiodeMOS field-effect transistor
Silicon N-channel【MOSFET】ELECTRICAL CHARACTERISTICS (Ta=25℃)
SymbolParameterV(BR)DSS
IGSS
IDSS
Vth

Drain-Source Breakdown Voltage
Gate-Source Leak current
Zero Gate Voltage Drain Current
Gate Threshold Voltage

RDS(ON)

Static Drain-Source
Resistance

Ciss
CossCrsstontoff

Test Condition

On-State

ID=100µA，VGS=0V
VGS=±20V，VDS=0V
VDS=40V，VGS=0V
ID=250µA，VDS=VGS
ID=250mA，VGS=3.2V
ID=500mA，VGS=4.0V
ID=500mA，VGS=10V

Input Capacitance
Output Capacitance
Return Capacitance

VDS=5V，VGS=0V，f=1MHz

Switching Time

VDD=20V，ID=200mA
VGS=0～5V

Limit
TYP.
1.51.10.7
11024850
65MIN.
401.0-MAX.
60±1012.0-【Zener Diode】 ELECTRICAL CHARACTERISTICS (Ta=25℃)
Zener Voltage Vz(V)

Reverse current IR（μA)

MIN

MAX

IZ（mA）MAX

VR(V)40600.1

1.040

Avalanche current test condition

RG

Ta=25℃
RG=25Ω
VDD=20V
VGS=10→0V
L=1mH

PG.
VGS

D.U.T.

DL

G
S

50Ω

VDD

Switching time test condition

5V
OUT
IN
50Ω

RL
VDD

90%

Input waveform
5V

0V

IN
0V

10%

VDD

10%

10us
Duty ≦ 1%
入力：tr, tf < 10ns
VDD = 20V
ソース接地
Ta = 25℃

Output waveform
90%VDS(on) td(on)td(off)trtontf
toffUnit
VµAµA
VΩpFnsPRELIMINARY

INKE111BC1

Notice : This is not a final specification
Some parametric are subject to change.

Built-in Zener DiodeMOS field-effect transistor
Silicon N-channel

TYPICAL CHARACTERISTICS
ID - VDS(Low Voltage Area)

ID - VDS

100

0.5
3.8V

4.2V

Ta = 25℃

3.0V

Ta = 25℃

2.8V

3.2V

0.4

80
Drain current
ID (A)

Drain current
ID (mA)

2.6V
60
2.4V

40

20

0.3

3.0V

0.2

2.8V
2.6V

0.1

2.2V

2.4V

VGS=2.0V0

VGS=2.0V

00

0.1

0.2

0.3

0.4

00.5

1.0

2.0

5.0

ID - VGS

IDR - VSD
11
VDS = 5V

Drain current
ID (A)

VGS = 0V

Reverse drain current
IDR (A)

4.0

Drain-source voltage
VDS (V)

Drain-source voltage
VDS (V)

0.1
Ta=
125℃
75℃
25℃
-25℃

0.1
Ta=125℃
75℃
25℃
-25℃
0.01

0.01
00.5

1.0

1

1.5

2

Source-drain voltage
VSD (V)34

Gate-source voltage
VGS (V)Vth - Ta|Yfs| - ID
102.5

VDS = 5V

Forward transfer admittance|Yfs| (S)ID = 0.25mA
VDS = VGS

2.0Gate threshold voltage
Vth (V)

3.0

1.5

1.0

0.5

1

Ta=125℃
75℃
25℃
-25℃

0.1

0.01

0-50

050

100

Ambient temperature
Ta (℃)

150

0.01

0.1
Drain current
ID (A)

1

PRELIMINARY

INKE111BC1

Notice : This is not a final specification
Some parametric are subject to change.

Built-in Zener DiodeMOS field-effect transistor
Silicon N-channel

RDS(ON) - ID

RDS(ON) - ID

10
Static drain-source on-state resistanceRDS(ON) (Ω)

Static drain-source on-state resistanceRDS(ON) (Ω)

10
VGS = 10V

1
Ta=125℃
75℃
25℃
-25℃

0.1

0.01

VGS = 4V

1
Ta=
125℃
75℃
25℃
-25℃

0.1

0.01
0.01

0.1

0.01

10.1
Drain current
ID (A)

Drain current
ID (A)RDS(ON) - Ta

RDS(ON) - VGS

2.0
Static drain-source on-state resistanceRDS(ON) (Ω)

5.0
Static drain-source on-state resistanceRDS(ON) (Ω)

1

ID = 0.3A

4.0

3.0
Ta=125℃
75℃
25℃
-25℃

2.0

1.0001234567

VGS = 4.0V
ID = 0.5A

1.5

1.0

VGS = 10V
ID = 0.5A

0.50-5080

Gate-source voltage
VGS (V)

50100

150

Ambient temperature
Ta (℃)C - VDSt - ID

10001000
toff
Ta = 25℃
VDD = 20V
VGS = 5VCiss

Coss
10
Ta = 25℃
VGS = 0V
f = 1MHz

1

100
ton10

tr

Crss

1
0.1

Switching timet (ns)

CapacitanceC (pF)

tf
100

10

Drain-source voltage
VDS (V)100

10.001

0.01

0.1

Drain current
ID (A)

1

PRELIMINARY
Notice : This is not a final specification
Some parametric are subject to change.

INKE111BC1

Built-in Zener DiodeMOS field-effect transistorSilicon N-channelrth(j-a) - Pw

IZ-VZ
10VGS = 0V

Ta = 25℃
Single Pulse
package mounted on
glass-epoxy substrage(19mm×45mm×1mm)

100

Zener Current
IZ (mA)

Transient thermal resistanceRth(j-a) (℃/W)

1000

10

1
Ta=
125℃
75℃
25℃
-25℃

0.1

11

10

100

Pulse width
Pw (ms)1000

404550
Zener Voltage
VZ (V)

5560

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Aug.2024