TRIAC(Through Hole / Isolated)

TMG20CQ60F(Tj=150 )10.5±0.3

3.2±0.3

Triac TMG20CQ60F is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
4.7±0.2
2.7±0.2

Typical Applications

Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, MicroWave Ovens, Hair Dryers, other control applications
Industrial Use: SMPS, Copier Machines, Motor Controls, Dimmer, SSR,
Heater Controls, Vending Machines, other control
applications

39.7±0.3

16.0±0.3

1
φ3.2±0.22.6±0.2Features

21.4±0.2

3.0±0.3

13.0±0.5

0.60±0.15
1.1±0.2

1 T12 T23 Gate

0.6±0.15

Nofo tRrN ecew om
D mes enig dn

IT(RMS)=20A
High Surge Current
Low Voltage Drop
Lead-Free Package

13

2.54±0.25

5.08±0.5

Identifying Code T20CQ6F

Maximum Ratings

SymbolVDRM
IT RMS
ITSM
I2t
PGM
PG AV
IGM
VGM
VISO
Tj
Tstg

2Tj=25Item
Repetitive Peak Off-State Voltage
R.M.S. On-State Current
Surge On-State Current
I2t for fusing
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage R.M.S.
Operating Junction Temperature
Storage Temperature
MassUnit mmunless otherwise specified

ReferenceRatings
600
20183/200
16550.52101500
40150
40150
2Tc 91
One cycle, 50Hz/60Hz, Peak value non-repetitive

A.C. 1minuteUnit
VAA
A2SW
W
A
V
V

g

Electrical Characteristics

Symbol

Item

IDRM
VTM
I GT1
I GT1
I GT3
I GT3
V GT1
V GT1
V GT3
V GT3
VGD

Repetitive Peak Off-State Current
Peak On-State Voltage
12Gate Trigger Current
3412Gate Trigger Voltage
34Non-Trigger Gate Voltage

dv/dt cCritical Rate of Rise of Off-State
Voltage at Commutation

Tj 150Holding Current
Thermal ResistanceJunction to case

IHRth     1（  ）＋Reference

VD=VDRM, Single phase, half wave, Tj 150
IT 30A, Inst. measurement

Ratings
Min. Typ. Max.
3
1.4
30
3030
1.5
1.5

VD 6V RL 10

UnitmA
VmA

V

1.5

Tj 150VD

12VDRMdi/dt cA/ms VD

23VDRM

0.1

V5V/ s25

 2（  ）−2.5 3（ III ）＋ 4（ III ）−mA/WTMG20CQ60F

On-State Characteristics（MAX）

Gate Characteristics

１０００

VGM（10V）

On-State Peak Current（A）

１０PGM（5W）

１００PG（AV）（0.5W）

１IGM（2A）

25℃
1＋GT１
1−GT１
1−GT３

０．
１

Ｔ
ｊ=２５℃
Ｔ
ｊ=１５０℃

VGD（0.1V）

１０Nofo t
RrN ecew om
D mes enig dn

Gate Voltage（V）

１００１００

１０００

１０１００００

０.５

１２

２.５

３

On-State Voltage（V）

RMS On-State Current vsMaximum Power Dissipation

RMS On-State vs
Allowable Case Temperature２４２２２０１８１６１４１２１０８６４２００π０

θ＝１８０゜
θ＝１５０゜θ

θ＝１２０゜2πθθ＝９０゜３６０゜θ：Conduction Angle

θ＝６０゜

θ＝３０゜

１３０１２０

θ＝30゜
θ＝60゜

１００４６８１０ １２ １４ １６ １８ ２０ ２２π０

θ＝90゜

θ

2π

θ＝120゜
θ＝150゜
θ＝180゜θ

９０３６０゜θ：Conduction Angle

８００

５１０１５０60HZ１００50HZ

５０１０１０0

Transient Thermal Impedance（℃/W）

２００１０２０

Transient Thermal Impedance

１０.１０.０１０.１

１１０１００Time（Sec.）Time（Cycles）

IGT −Tj（Typical）

VGT −Tj（Typical）

IGT（t℃）
×100（％）
IGT（２５℃）

VGT（t℃）
×100（％）
VGT（２５℃）

１０００

１０００

V＋GT1（!＋）
V−GT1（!−）
V−GT3（#−）

１００

１００
I＋GT１
（ !＋ ）I−GT１（!−）

I−GT３（#−）

１０−５０１５RMS On-State Current（A）

Surge On-State Current Rating（Non-Repetitive）

０１４

１４０

１１０２

３.５

１５０

RMS On-State Current（A）

Surge On-State Current（A）

１.５

Gate Current（mA）

Allowable Case Temperature（℃）

Power Dissipation（W）

０．
０１１０−２５０２５５０７５１００

Junction Temp. Tj（℃）

１２５１５０１０−５０−２５０

２５５０

７５１００

Junction Temp. Tj（℃）

１２５ １50