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NIR-MPX800 series
800 nm band Phase Modulators

Photline Modulator
The Photline NIR-MPX800 series are phase modulators especially designed
to operate in the 800 nm wavelength band. They are available with various
modulation bandwidth, from low frequency to 10 GHz and beyond.
Like all iXBlue Near InfraRed (NIR) modulators, the Photline NIR-MPX800
series use a proton exchanged based waveguide process that confers theman unparalleled stability and a high photo-refractive threshold.

NIR-MPX800-LN-0.1 series Performance Highlights
ParameterMinTypMax

Unit

FEATURESOperating wavelength

780

850890nm• High optical power handlingElectro-optical bandwidth-150-MHz

Vp RF @50 kHz-23VInsertion loss

-3.5

4.5dB

• High Bandwidth (> 10 GHz)
• High stability• Low Vπ

Specifications given at 25 °C, 850 nm.

• Low insertion loss
APPLICATIONS• Interferometric based sensors• Quantum optics• Frequency shifting• Pound-Drever-Hall locking
OPTIONS

NIR-MPX800-LN-05 series Performance Highlights
Parameter

Min

TypMaxUnit

Operating wavelength

780

850890nm

Electro-optical bandwidth5--GHz

Vp RF @50 kHz-

34VInsertion loss

-

3.5

4.5dB

Specifications given at 25 °C, 850 nm.

• Hermetic sealing• 20 GHz version• 1060 nm, 1300 nm band versions
RELATED EQUIPMENTS• RF amplifiers• NIR-MX800-LN intensity modulators

NIR-MPX800-LN-10 series Performance Highlights
Parameter

Min

TypMaxUnit

Operating wavelength

780

850

890nm

Electro-optical bandwidth

1012-

GHz

Vp RF @50 kHz-

45V

Insertion loss

-3.5-dB

Specifications given at 25 °C, 850 nm.

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NIR-MPX800 series
800 nm band Phase Modulators

Photline Modulator

NIR-MPX-800-LN-0.1
150 MHz Phase Modulator

Electrical Characteristics
Parameter

SymbolCondition

Min

TypMaxUnit

S21

RF electrodes

100150-MHzVπ RF50 kHz

RF electrodes-24V

Zin-RF--10 000-ΩSymbolCondition

Min

Typ

Max

Unit

Crystal--Lithium Niobate X-Cut Y-Prop, MgO doped

Waveguide process--

Proton exchange

Operating wavelength

λ-

780

850

890

nm

Insertion loss

IL

Without optical connectors

-

3.5

4.5

dB

Optical return loss

ORL--40-45-dB

Electro-optic bandwidth
Vπ RF @50 kHz
RF input impedance

Optical Characteristics
Parameter

All specifications given at 25 °C, 850 nm, unless differently specified.

Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional
operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure
to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter

SymbolMinMax

UnitModulation voltage range

EVin-2020V

Optical input power

OPin-14dBmOperating temperature

OT0+70°C

Storage temperature

ST-40+85°C

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NIR-MPX800 series
800 nm band Phase Modulators

Photline Modulator

NIR-MPX-800-LN-05
5 GHz Phase modulator

Electrical Characteristics
Parameter

SymbolCondition

Min

TypMax

Unit

Electro-optic bandwidth

S21

RF electrodes, from 2 GHz

5--GHzRipple S21

ΔS21

RF electrodes

-0.5

1dB

Electrical return loss

S11

RF electrodes--12-10dBVπRF50 kHz

RF electrodes-

34V

Zin-RF--50-

W

SymbolCondition

MinTypMax

Unit

Crystal--Lithium Niobate X-Cut Y-Prop, MgO doped

Waveguide process--Proton exchange

Operating wavelengthλ-

780

850

890

nm

Insertion loss

ILWithout optical connectors

-

3.5

4.5

dB

Optical return loss

ORL--40-45-dB

Vπ RF @50 kHz
RF input impedance

Optical Characteristics
Parameter

All specifications given at 25 °C, 850 nm, unless differently specified.

Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional
operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure
to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter

SymbolMinMaxUnit

RF input power

EPin

-28

dBm

Optical input power

OPin-14dBmOperating temperature

OT0+70°C

Storage temperature

ST-40+85°C

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NIR-MPX800 series
800 nm band Phase Modulators

Photline Modulator

NIR-MPX-800-LN-10
10 GHz Phase modulator

Electrical Characteristics
Parameter

SymbolCondition

Min

TypMax

Unit

Electro-optic bandwidth

S21

RF electrodes, from 2 GHz

1012-

GHz

Ripple S21

ΔS21

RF electrodes

-

0.5

1dB

Electrical return loss

S11

RF electrodes--12-10dB

Vπ RF50 kHz

RF electrodes-

45V

Zin-RF--50-

ΩSymbolConditionMin

TypMaxUnit

Crystal--Lithium Niobate X-Cut Y-Prop, , MgO doped

Waveguide process--Proton exchange

Operating wavelengthλ-780

850890nm

Insertion loss

IL

Without connectors

-3.5

4.5

dB

Optical return loss

ORL--40-45-dB

Vπ RF @50 kHz
RF input impedance

Optical Characteristics
Parameter

All specifications given at 25 °C, 850 nm, unless differently specified.

Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional
operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure
to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter

SymbolMinMaxUnit

RF input power

EPin-28dBm

Optical input power

OPin-14dBmOperating temperature

OT0+70°C

Storage temperatureST-40+85°C

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NIR-MPX800 series
800 nm band Phase Modulators

Photline Modulator
Mechanical Diagram and Pinout
All measurements in mm

121.5

M1.6x0.35 - 6H

1.5

8269.65
1. 5

4.5

4.75

155

n2.2

2.5
20.5

Port2.51 258595Function

NoteIN

Optical input port 01

OUT

Optical output port

RF

RF input port

IN D.
DECHELLE :CREATIONPolarization maintaining 800 nm SJ
06/02/2014
Corninglength
D
ESCRIPTIO85-U25D
N DDE LA REVISION : 1.5 meter, buffer diameter
DESSINE : 900DAumTE
D
D
D
1:1

TOL. GEN. :MATIERE :TRAITEMENT :VERIFIE

QUANTITE :Polarization maintaining 800nm
Corning
85-U25D length- : 1.5 meter, buffer -diameter : 900 um -A TR SF F M P
PL-0855-MC-01
Wiltron female K16, rue Auguste Jouchoux
25001 BESANCON- FRANCE
Tél. : +33 (0)3 81 85 31 80 - Fax : +33 (0)3 81 81 15 57
Ce document est la proprieté de PHOTLINE Technologies et ne peut être reproduit ou communiqué sans son autorisation

01

Ordering information				XX = Bandwidth : 0.1 150 MHz 05 5 GHz 10 10 GHz
Y = Input fiber : P Polarisation maintaining S Standard single mode
Z = Input fiber : P Polarisation maintaining S Standard single mode
AB = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
CD = Output connector : 00 bare fiber FA FC/APC FC FC/SPC

About us
iXBlue Photonics includes iXBlue iXFiber brand that produces specialty optical fibers and Bragg gratings based fiber
optics components and iXBlue Photline brand that provides optical modulation solutions based on the company lithium
niobate (LiNbO3) modulators and RF electronic modules.
iXBlue Photonics serves a wide range of industries: sensing and instruments, defense, telecommunications, space andfiber lasers as well as research laboratories all over the world.
Ixblue reserves the right to change, at any time and without notice, the specifications, design, function orform of its products described herein. All statements, specification, technical information related to theproducts herein are given in good faith and based upon information believed to be reliable and accurate at
the moment of printing. However the accuracy and completeness thereof is not guaranteed. No liability isassumed for any inaccuracies and as a result of use of the products. The user must validate all parameters for each application before use and he assumes all risks in connection with the use of the products

3, rue Sophie Germain
25 000 Besançon - FRANCETel. : +33 (0) 381 853 180 - Fax : + 33 (0) 381 811 557
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11_2015_PT_SP_ED0

NIR-MPX800-LN-XX-Y-Z-AB-CD