Semiconductor
Measurement and Analysis Technologies

Spectroscopic andParticle Analysis

horiba.com/scientificSemiconductor

C O N T EN T S

Measurement and Analysis Technologies
Semiconductor Processing

S u rface / F ilm Qu ality

Providing Solutions at Every Stage of the Semiconductor Manufacturing Process
Semiconductors are the key evolving components in the industry today. HORIBA has kept its sights keenly focused

Stress / Structural Analysis

on this micro world. As specialists in each field, we have pursued proprietary engineering projects in a wide rangeof areas that include evaluation and analysis, purity of ultra-pure water, composition of liquids and gases, and more
broadly, environmental and safety. With our sights set clearly on the overall process, we have developed a line ofanalytical equipment, fluid control and measuring systems tailored to every stage of the semiconductor manufacturing

Defect A n alysis

process in response to stringent quality control requirements. In all stages, from materials evaluation through to final
inspection, our products help maintain high efficiency in the manufacture of leading-edge electronics devices.

P article Detection / Removal

HORIBA's wide range of measuring techniques support your fabrication processes by providing you
with the critical data that helps guarantee your process efficiency.

P olish in g, C lean in g an d Etch in g

• Image Sensors • Integrated Circuits • LSI • Memory • Display Devices • MEMS • Memory • Laser Diodes • LEDs • CMOS • Logic Devices

Surface / Film Quality

Stress / Structural Analysis

Spectroscopic Ellipsometry

Glow Discharge Optical Emission Spectroscopy

Oxygen / Nitrogen / Hydrogen Analysis

Raman Microscopy

Thickness, refractive index and extinction coefficientSpectroscopic ellipsometry is a surface-sensitive, nondestructive, non-intrusive optical technique widely used forthin and transparent layer characterization. It is based on
the change in the polarization state of light as it is reflected
obliquely from a thin sample.

Depth profiling of wafer
GD-OES enables the elemental analysis in the depth
direction of the material at the μm/min sputtering rate.
In addition, GD-OES can evaluate the thickness of thinfilms by element distribution changes. This product is used
in a wide range of fields such as R&D and quality control insemiconductor processes.

Oxygen analysis in Si wafer
Oxygen concentration affects the electrical resistance of theSi wafer. Therefore, it is required to measure the amountof oxygen at low concentration (10 ppm or less). EMGA isable to distinguish the quantitative analysis of oxygen on thesurface and inside the Si wafer by combustion rate control.

Silicon stress / Strain measurement
Raman spectroscopy is a non-destructive techniquewhich is used to study chemical bonding in materials.
The unique 800 mm focal length of the LabRAM HREvolution provides excellent performance and highspectral resolution, which is ideal for measuring andmapping stress and strain in silicon. The LabRAM HREvolution can also be used for photoluminescencemeasurements.

Features• Possible to analyze film thickness from ultra thin to 80 μm• Micro spot functions available for patterned samples• Automatic mapping stage for film thickness uniformity

Features• Quick analysis (μm/min)• Wide range from H (hydrogen) to U (uranium)• No pre-treatment and no Ultra high vacuum requiredFeatures• Quick measurement (< 5 minutes)• Wide measurement range (ppm ∼ %)• Various customized unit/functions (i.e. Auto Sampler)Features• Stress/strain distribution on silicon structure(Calculate the value based upon difference in peak shiftcomparison with unstrained Si)• The highest stress/strain resolution• PL (photoluminescence) is also available

Oxygen / Nitrogen / Hydrogen Analyzer

EMGA-930

Spectroscopic Ellipsometer

UVISEL Plus

Glow Discharge
Optical Emission Spectrometer

Micro-Raman Spectrometer

GD-Profiler2

LabRAM HR Evolution

GaN bandgap ∼ 3.4 eVGaN bandgap ∼ 3.4 eVGood ProductDefective ProductSiReplace

Oxygen contained in the surface and inside of thesample after surface cleaning can be separated andquantified by the temperature rise analysis function.
Optical constants (refractive index and extinction coefficient)and bandgap of GaN

Information Obtained• Film thickness• Optical constants/band gap• Surface roughness• Crystallinity• Stoichiometry

It takes only 30 seconds to analyze the differences in amounts ofAl, H, and O existing near GaN surface.

Information Obtained• Film thickness• Impurity analysis• Elemental composition• Carrier concentration

Stress distribution on silicon structure.
(Stress value calculated based upon
difference in peak shift comparison
with unstrained silicon)

Information Obtained• Elemental composition(O, H, N)• Impurity analysis• Carrier concentration

Information Obtained• Chemical analysis/identification• Defect/impurity analysis• Crystallinity/crystalline order• Stress/strain• Composition• Number of layers of 2D materials				

3D mapping of film thickness

 Compressive strain
 Tensile strain

Oxygen concentration
analysis in Si wafer

Defect Analysis
Combined AFM-Raman

PhotoluminescenceCathodoluminescence

X-ray Fluorescence

Structural analysis with spatial resolution exceeding
the diffraction limit of light
By combining an Atomic Force Microscope (AFM) and a
Raman microscope, it is possible to obtain physical andchemical information on the outermost layer of a material. Tip
Enhanced Raman Spectroscopy (TERS**) measurement witha special probe enables nanometer-scale structural analysis.

High-speed defect analysis on wafer surface
Photoluminescence (PL) can provide the visualizationof defects on the wafer surface based on variation ofemission/lifetime, which can be obtained by steady-state
PL spectrum and time-resolved measurement. The defectconcentration and status on the surface can be analyzed
precisely from the data analysis such as a histogram ofemission intensity.

Defect density measurement
Cathodoluminescence (CL) demonstrates its strengthin evaluating the crystallinity and defects of Silicon andCompound semiconductor (GaN, SiC, etc.) wafers at thespatial resolution of Scanning Electron Microscope (SEM).

Defect inspection on wafer / Elemental mapping
Micro X-ray Fluorescence (XRF) can detect particles
through high-speed screening and highlighting throughimaging processing. Additionally, the high resolution X-ray
beam enables detailed analysis of elements containedin particles. The microscope is also capable of particle
analysis.

Features• Acquire AFM and Raman images simultaneously• Top/Side/Bottom illumination mode in TERS
measurement can be selectable (depends onsystem configuration)

Features• Wavelength from UV to NIR (200 to 2100 nm)• High speed mapping function up to 12 inch wafer• PL, time-resolved PL and Raman measurement
functions can also be integrated

Features• CL can be added to your Scanning ElectronMicroscope• Wavelength from UV to NIR (200 to 2100 nm)• Stand alone dedicated CL imaging
system is availableFeatures• X-ray transmission image observes a defect based
upon elemental analysis• Elemental analysis of several tens of μm size particles• Non-destructive analysis of large samples• Analyze multilayer film thickness on the sub μm level

X-ray Analytical Microscope

XGT-9000
Cathodoluminescence Measurement Systems

CLUE Series/Imaging CL

PL image

CL image

μm area

Sub-μm area

Elemental mapping of defects on SiC wafer

AFM-Raman

XploRA Nano

Standard Microscope Spectroscopy System

SMS
3 inch InGaP wafer high speed mapping

X-ray transmission image observes defects
based upon elemental analysis.
(b) High resolution PL map on a defect region

Raman image of acarbon nanotube(Visualize differencein spectra at eachmeasurement point bynanoscale)spatial resolution
between microscopic
image and TEPL image)

Lifetime (counts)

7000

WSe² flaking defect imaging evaluation(Difference in spatial resolution between
microscopic image and TEPL* image)

5000
4000
3000
2000
1000

(a) PL mapping on a InP based wafer, showing homogeneityand defects

3959

79

Time (ns)99(b) PL lifetime decay curves from the defect zone

Steady-state emission spectrum and emission lifetime
measurements are conducted at the same area
Steady-stateEmission
Spectrum

ProbeSample

Observation of particle on SiC wafer and elemental mapping- Outside region- Defect edge
- Defect center

6000

μm area

Sub-μm area

◀ Shell pit after

Optical Image

Particle Observation Image

Analysis of plating film thickness on fine wiring pattern

KOH etching

1 6Objective

Information Obtained• Film thickness• Roughness• Electrical properties• Carrier concentration• Number of layers of 2D materials• Chemical analysis at the nanoscale• Defect/impurity analysis at the nanoscale*TEPL - Tip Enhanced Photoluminescence

Emission DecayCurveτ = 970 μsec
τ = 636 μsec
This lifetime measurement can identify a slight difference
which cannot be detected by steady-state measurement

Information Obtained• Defect/impurity analysis• Band gap• Doping and carrier concentration

CL image 1

CL image 6

CL image 1 shows mixed (edge ​​and spiral) dislocations, and CL image 6shows edge dislocations. Based on these results, it is possible to classify
and evaluate defects by displaying intensity image and 3D wavelength.

Information Obtained• Defects/impurities• Contaminations/inclusions

Information Obtained• Film thickness• Elemental composition• Defect/impurity analysis

Polishing, Cleaning and Etching

Particle Detection / Removal
Particle Detection

Particle Removal

Particle Size Distribution

Detection of particles on reticles and photomasks
Mask surface contamination is a yield killer. PD Xpadion isa fully-automated laser scattering based particle detection
system designed to detect, analyze, and capture imagesof surface particulates on reticles and photomasks in wafer
fabs and mask shops. In addition to particle detection, PD
Xpadion is designed to implement particle characterization
by Raman analysis, pellicle film thickness and uniformity, andpellicle health monitoring tools.

Removal of particles on reticle and wafer
The RP-1 system automatically removes particles on thereticle/photomask, or wafer by air (or N2) blow and vacuum
suction. The system can handle up to 200 mm wafers, orup to 9" mask.

Analysis of particles inside a CMP slurry
Particle size analysis is crucial in the slurry making process. If the slurry particles are too small, they can be ineffective forpolishing. On the other hand, if the slurry particles are too large, they can damage the surface during polishing. Laser
scattering, dynamic light scattering, nano-particle tracking analysis, and centrifugal nanoparticle analysis are particle sizing
techniques used to measure CMP slurry particle sizes ranging from nm to mm, concentration, and zeta potential.

Features• High throughput (≈ 60 sec/sample)• Automatic wafer or mask handling is available to prevent
any ESD*• Can be Integrated with Particle detection system(PD Xpadion)

Features• Laser Scattering type of particle analysis with a highspeed and reproducibility• Sample to sample analysis in less than 60 seconds for
wet measurement• Wide dynamic range from 10 nm - 5000 μm

Features• Wide dynamic range from 10 nm to 15 µm• The ViewSizer 3000’s unique capability to visualize,
measure, and count wide-ranging sizes of nano andmicron sized particles

Laser Scattering Particle Size
Distribution Analyzer

Multi-Laser Nanoparticle Tracking
Analysis (NTA)

Features• High-throughput (7 min./surface)• Automatically capture an image and size of every
particle/defect detected• Remarkable up-time(up-time ≥ 98%)

* ESD = Electro-Static Discharge

Reticle/Mask
Particle Removal System

RP-1
Reticle/Mask Particle
Detection System

PD Xpadion

Partica LA-960V2

Features• Wide dynamic range from 10 nm to 40 µm• High resolution particle size distribution measurement by
centrifugation technology• Partica Centrifuge can capture a small amount offoreign particles with a high resolutionParticle Removal By CDA and Vacuum Suction

Vacuum suction

PD Xpadion has
an advantage overbuilt-in type ofparticle inspection
unit in lithographyscanner todetect particles
on pellicle/
glass surface
without any false
detection.

ViewSizer 3000

Air (or N2) blow

Glass surface

Partica LA-960V2 Data Example
Pellicle surface
Air (or N2) blow

Vacuum suction

Glass side 10 μm Standard glass beads

LUDOX® TM-50 particle size distribution

Features• Wide dynamic range from 0.3 nm to 10 μm• The SZ-100V2 uses the technique of dynamic lightscattering to determine particle size.
• Zeta potential analysis for a surface charge by applying
an electric field

PD Xpadion
Automatic or ManualParticle Sizing tools foradvanced analysis

Centrifugal Nanoparticle Analyzer

CN-300 Partica Centrifuge

Before removal
After removal
10 μm PSLs (5 solid particles remain): High percentage removal rate
Standard silica particles with sizes of 0.48 μm, 0.73 μm, 0.99 μm, and 1.57 μm

Information Obtained• Particle detection and location• Particle Size and Particle Image• Particle Material Analysis (Raman Analysis Option)

Dynamic Light Scattering
Nanoparticle Analyzer

nanoPartica SZ-100V2

Information Obtained• Particle size distribution• Zeta potential• Concentration

Overview of All Material Interests
Raman Spectroscopy
Identification of components in a CMP slurry
Macroscopic Raman Spectroscopy can provide quick
identification and speciation of various components ina cleaning and etching solution or a CMP slurry. It canalso provide additional information such as chemical
concentration, or can be used to track chemical bonding
changes, in real time, for studying reaction kinetics.
Features• Easy-to-use for chemical identification, quantification,and kinetic studies• Non-destructive, non-invasive and fast measurements• Various accessories for on-line monitoring, temperature
measurements, measurements through sealedcontainers, or directly in liquid.

Chemical Concentration
Determination of chemical concentration
Chemical concentration monitors, based off of absorption
spectroscopy, are used for real-time in-line and off-line
monitoring of chemical components which are criticalto cleaning, etching, and polishing. Some chemical
concentration monitors can monitor up to eightcomponents in a mixture, simultaneously and both flowthrough or non-contact options are available for a wide
range of applications.
Features• Ability to monitor up to eight components in real-time• No reagents required and zero sample consumption
for reduced cost of ownership• High performance with simple plug and play installation

Chemical Concentration
MonitorCS-700Features• Completely non-contact measurements• Stable operation greatly reduces downtime• Able to measure high temperature samples up to 80 ˚C.

Film thickness• Spectroscopic Ellipsometry• Reflectometry• X-Ray Fluorescence• GD-OES• Spectroscopic Ellipsometry• Reflectometry• Raman Spectroscopy• Raman-AFM• Photoluminescence• Cathodoluminescence• X-Ray Fluorescence• GD-OES• PP-TOFMS• Instrumental Gas Analyzers

Band gap

Doping Concentration

Optical Constants

MacroRAM

CS-900Information Obtained• Chemical Components• Concentration

Determination of chemical concentration of complex chemicals

Information Obtained• Concentration

Surface Potential• AFM• Raman-AFM

Layers of 2D Materials• Photoluminescence• PP-TOFMS

Carrier Concentration

Roughness• Photoluminescence• Instrumental Gas Analyzers• GD-OES• AFM• Raman-AFM

Electrical Properties• Spectroscopic Ellipsometry• AFM• Raman-AFM

Crystallinity• Spectroscopic Ellipsometry• Raman Spectroscopy• Raman-AFM

Stoichiometry• Raman Spectroscopy• Cathodoluminescence

Defect Analysis• Raman Spectroscopy• Photoluminescence• Cathodoluminescence• X-Ray Fluorescence• AFM• Raman-AFM

Benzotriazole, glycine and hydrogen peroxide in a CMP slurry,
identified by Macro-Raman spectroscopy• Fluorescence• Spectroscopic Ellipsometry• Photoluminescence• FluorescenceStress/Strain
Chemical Concentration Monitor

Carrier Lifetime• Spectroscopic Ellipsometry• Raman Spectroscopy• Photoluminescence• AFM• Raman-AFM• Spectroscopic Ellipsometry• Raman Spectroscopy• Raman-AFM• AFM

Benchtop Raman Spectrometer

Impurity Analysis

Elemental Composition• X-Ray Fluorescence GD-OES• PP-TOFMS• Instrumental Gas Analyzers

Chemical Analysis• Raman Spectroscopy• Raman-AFM• Chemical Concentration Monitors• AFM• Raman-AFM

Particle Analysis• Particle size analyzers

HORIBA Solutions for the Semiconductor Industry

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horiba.com/scientific

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