RSJ400N10
DatasheetNch 100V 40A Power MOSFET
Outline

VDSS

100V

RDS(on) (Max.)

27m

ID

40A

PD

50W

Features(2)

TO-263S
SC-83
LPT(S)(1)(3)

Inner circuit(3)1) Low on-resistance.
(1) Gate(2) Drain(3) Source2) Fast switching speed.
3) Drive circuits can be simple.

(1)

2

1 ESD PROTECTION DIODE
2 BODY DIODE

4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche tested

1

(2)

Packaging specifications
Packaging

TapingReel size (mm)330

Tape width (mm)16

Automotive Motor Drive

Basic ordering unit (pcs)

2,500

Automotive Solenoid Drive

Taping code

TL

Application
Switching Power Supply

Type

Marking

RSJ400N10

Absolute maximum ratings(Ta = 25°C)
Parameter

Symbol

Value

Unit

VDSS

100

V

Tc = 25°C

ID *1

40

A

Tc = 100°C

ID *1

22

A

80

A

Drain - Source voltage
Continuous drain current*2

Pulsed drain current

ID,pulse

Gate - Source voltage

VGSS

20

V

Avalanche energy, single pulse

EAS *3

14.6

mJ

Avalanche current

IAR *310A

Tc = 25°C

PD

50

W

Ta = 25°C *4

PD

1.35

W

Junction temperature

Tj

150

°C

Range of storage temperatureTstg

55 to 150

°C

Power dissipationwww.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

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2017.08 - Rev.B

Datasheet

RSJ400N10
Thermal resistance
ValuesParameter

Symbol

Unit
Min.

Typ.

Max.

Thermal resistance, junction - case

RthJC

-

-

2.5

°C/W

Thermal resistance, junction - ambient *4

RthJA

-

-

92.6

°C/W

Soldering temperature, wavesoldering for 10s

Tsold

-

-

265

°C

Electrical characteristics(Ta = 25°C)
ValuesParameter
Drain - Source breakdown voltage

SymbolV(BR)DSS

Conditions
VGS = 0V, ID = 1mA

Unit
Min.

Typ.

Max.

100

-

-

-

-

1

V

VDS = 100V, VGS = 0V
Zero gate voltage drain current

IDSS

Tj = 25°C

A

VDS = 100V, VGS = 0V
-

-

100

Tj = 125°C
Gate - Source leakage current

IGSS

VGS = 20V, VDS = 0V

-

-

10

A

Gate threshold voltage

VGS (th)VDS = 10V, ID = 1mA

1.0

-

2.5

V

VGS = 10V, ID = 40A

-

19

27

VGS = 4.0V, ID = 40A

-

21

30

Static drain - sourceon - state resistanceRDS(on) *5m

VGS = 10V, ID = 40A
-

42

60

23

56

-

Tj = 125°C
Forward transfer admittancewww.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

gfs

VDS = 10V, ID = 40A

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Datasheet

RSJ400N10
Electrical characteristics(Ta = 25°C)
ValuesParameter

SymbolConditions

Unit
Min.

Typ.

Max.

Input capacitanceCiss

VGS = 0V

-

3600

-

Output capacitanceCoss

VDS = 25V

-

270

-

Reverse transfer capacitanceCrssf = 1MHz

-

180

-

Turn - on delay timetd(on)VDD ⋍ 50V, VGS = 10V

-

25

-

Rise timetr *5

ID = 20A-

80-

Turn - off delay timetd(off)

RL = 12

-

205

-

Fall timetf

RG = 10

-

250

-

*5

*5

*5

pF

ns

Gate Charge characteristics(Ta = 25°C)
ValuesParameter

Symbol*5

Total gate charge

Qg

Gate - Source charge

Qgs *5Gate - Drain charge

Qgd

Gate plateau voltage

V(plateau)*5

Conditions

Unit
Min.

Typ.

Max.

VDD ⋍ 50V

-

90

-

ID = 40A-

12-

VGS = 10V

-

18

-

VDD ⋍ 50V, ID = 40A

-

3.1

-

nC

V

Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
ValuesParameter

SymbolIS*1

Pulsed source current

ISM

*2

Forward voltage

VSD

*5

Reverse recovery timetrr

Reverse recovery charge

Qrr

Continuous source current*5*5Conditions

Unit
Min.

Typ.

Max.

-

-

40

A

-

-

80

A

VGS = 0V, IS = 40A

-

-

1.5

V

IS = 40A
di/dt = 100A/s

-

66

-

ns

-

100

-

C

Tc = 25°C*1 Limited only by maximum temperature allowed.
*2 Pw  10s, Duty cycle  1%
*3 L ⋍ 200H, VDD = 50V, Rg = 10, starting Tj = 25°C
*4 Mounted on a epoxy PCB FR4 (27mm × 25mm × 0.8mm)*5 Pulsed
www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

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2017.08 - Rev.B

Datasheet

RSJ400N10
Electrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

1000

100

100

Drain Current : ID [A]Power Dissipation : PD/PD max. [%]

120

80
60
40
20

PW = 100us10
Operation in thisarea is limited
by RDS(on)1

PW = 1ms
PW = 10ms

0.1
Ta=25ºC
Single Pulse
0.01

0
0

25

50

75

100

125

150

0.1

175

1

10

100

1000

Drain - Source Voltage : VDS [V]Junction Temperature : Tj [°C]

Normalized Transient Thermal Resistance : r(t)Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width10
Ta=25ºC
Rth(j-c)(t) = r(t)×Rth(ch-c)Rth(j-c) = 2.5ºC/W
1

0.1

top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single

0.01
0.00010.001 0.01

0.1

1

10

100 1000

Pulse Width : PW [s]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

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Datasheet

RSJ400N10

Fig.4 Avalanche Current vs Inductive Load

Fig.5 Avalanche Energy Derating Curvevs Junction Temperature

100

120
VDD=50V,RG=25
VGF=10V,VGR=0V
Starting Tch=25ºC

Avalanche Energy : EAS / EAS max. [%]Avalanche Current : IAS [A]Electrical characteristic curves

10

1

0.1
0.01

0.1

1

10

100
80
60
40
20
0

100

0

Coil Inductance : L [mH]

50

75

100

125

150

175

Junction Temperature : Tj [°C]

Fig.6 Typical Output Characteristics(I)Fig.7 Typical Output Characteristics(II)40

40
Ta=25ºC
Pulsed

VGS=10.0V

VGS=3.0V

VGS=4.5V

Drain Current : ID [A]VGS=4.0V
VGS=3.0V
20
VGS=2.5V
10

Ta=25ºC
Pulsed

VGS=10.0V

30

30

Drain Current : ID [A]25

VGS=2.5V
VGS=4.0V

20

10
VGS=2.0V

VGS=2.0V
0

0
0

0.2

0.4

0.6

0.8

0

1

4

6

8

10

Drain - Source Voltage : VDS [V]Drain - Source Voltage : VDS [V]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

2

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2017.08 - Rev.B

Datasheet

RSJ400N10

Fig.8 Breakdown Voltage
vs. Junction Temperature

Fig.9 Typical Transfer Characteristics

120

100
VGS = 0V
ID = 1mA

115

VDS= 10V
10110

Drain Current : ID [A]Normarize Drain - Source Breakdown Voltage: V(BR)DSS [V]Electrical characteristic curves

105
100
95
90

1

0.1

Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC

0.01

85
0.001

80
-50

0

50

100

0

150

2

3

4

5

Gate - Source Voltage : VGS [V]Fig.10 Gate Threshold Voltage
vs. Junction Temperature

Fig.11 Transconductance vs. Drain Current

3.0

100

2.5

VDS= 10V

VDS = 10V
ID = 1mA

Transconductance : gfs [S]Gate Threshold Voltage : VGS(th) [V]

Junction Temperature : Tj [°C]

1

2.0
1.5
1.0
0.5
0.0
-50 -25

0

25

50

75

Ta= 25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC

1

0.1

0.01
0.01

100 125 150

Junction Temperature : Tj [°C]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

10

0.1

1

10

100

Drain Current : ID [A]

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2017.08 - Rev.B

Datasheet

RSJ400N10
Electrical characteristic curves

Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage

100
Ta=25ºC80
ID = 20A
60
ID = 40A
40

20

0
0

5

10

15

Static Drain - Source On-State Resistance: RDS(on) [m]100

Static Drain - Source On-State Resistance: RDS(on) [m]Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)Gate - Source Voltage : VGS [V]Ta=25ºC

VGS= 10V
VGS= 4.0V

10
0.01

0.1

1

10

100

Drain Current : ID [A]Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance: RDS(on) [m]100
90

VGS = 10V
ID = 40A

80
70
60
50
40
30
20
10
0
-50

0

50

100

150

Junction Temperature : Tj [ºC]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

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2017.08 - Rev.B

Datasheet

RSJ400N10
Electrical characteristic curves

Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)1000

VGS= 10V

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC

100

10
0.01

0.1

1

10

100

Static Drain - Source On-State Resistance: RDS(on) [m]

Static Drain - Source On-State Resistance: RDS(on) [m]

1000

VGS= 4.5V

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC

100

10
0.01

0.1

10

100

Drain Current : ID [A]Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)Fig.18 Drain Current Derating Curve

1000

120
VGS= 4.0V
100

Drain Current Dissipation: ID/ID max. (%)

Static Drain - Source On-State Resistance: RDS(on) [m]Drain Current : ID [A]1

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC

100

80
60
40
20
0

10
0.01

0.1

1

10

0

100

Drain Current : ID [A]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

25

50

75

100

125

150

175

Junction Temperature : Tj [ºC]8/12

2017.08 - Rev.B

Datasheet

RSJ400N10
Electrical characteristic curves

Fig.19 Typical Capacitancevs. Drain - Source Voltage

Fig.20 Switching Characteristics
10000

100000Ta = 25ºC
f = 1MHz
VGS = 0V

1000
Coss
100
Crss

Switching Time : t [ns]Capacitance : C [pF]Cisstd(off)

100

10

tr

td(on)

1

10
0.01

0.1

1

10

0.01

100

0.1

1

10

Drain - Source Voltage : VDS [V]Drain Current : ID [A]Fig.21 Dynamic Input Characteristics

Fig.22 Source Current
vs. Source - Drain Voltage

10

100

5

100

VGS=0V

Ta=25ºC
VDD= 50V
ID= 40A
RG=10

10

Source Current : IS [A]Gate - Source Voltage : VGS [V]

tf

1000

10000

Ta=25ºC
VDD= 50V
VGS= 10V
RG=10

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC

1

0.1

0.01

0
0

0.0

10 20 30 40 50 60 70 80 90 100

1.0

1.5

Source-Drain Voltage : VSD [V]Total Gate Charge : Qg [nC]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

0.5

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Datasheet

RSJ400N10
Electrical characteristic curves

Fig23 Reverse Recovery Time
vs.Source Current

Reverse Recovery Time : trr [ns]

1000

100

Ta=25ºC
di / dt = 100A / s
VGS = 0V
10
0.1

1

10

100

Source Current : IS [A]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

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2017.08 - Rev.B

Datasheet

RSJ400N10
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
VGS

Fig.1-2 Switching Waveforms
Pulse width

ID

VDS
RL

D.U.T.

50%

10%

VDD

RG

90%

50%
10%

VGS
VDS

10%

90%
td(on)
ton

Fig.2-1 Gate Charge Measurement Circuit
VGS

tf
toff

Fig.2-2 Gate Charge Waveform
VG

ID

VDS

Qg

RL

VGS

D.U.T.

IG(Const.)

90%
td(off)

tr

Qgs

VDD

Qgd

ChargeFig.3-1 Avalanche Measurement Circuit
VGS

IAS

D.U.T.
RG

Fig.3-2 Avalanche Waveform

VDS
L

V(BR)DSS
IAS

VDD
VDD
EAS =

www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

11/12

1
2

2

L IAS

V(BR)DSS
V(BR)DSS - VDD

2017.08 - Rev.B

Datasheet

RSJ400N10
Dimensions (Unit : mm)

D

A2

A

B

L2

c1

E

L3

LPTS

H

A1

L4

Lp

b2

e

b

x

L1

L

b3

c
A3

B A

l3
l1

e

b6

b5

l2

Patterm of terminal position areas
DIM
A1
A2
A3
b
b2
b3
c
c1
D
E
e
HE
L
L1
L2
L3
L4
Lp
x
DIM
b5
b6
l1
l2
l3

MILIMETERS
MIN
MAX
0.00
0.30
4.30
4.70
0.25
0.68
0.98
8.90
1.14
1.44
0.30
0.60
1.10
1.50
9.80
10.40
8.80
9.20
2.54
12.80
13.40
2.70
3.30
0.90
1.50
1.10
7.25
1.00
0.90
1.50
0.25
MILIMETERS
MIN
MAX
1.23
10.40
2.10
7.55
13.40

INCHES
MIN
0
0.169

MAX
0.012
0.185
0.01

0.027

0.039
0.35

0.045
0.012
0.043
0.386
0.346

0.057
0.024
0.059
0.409
0.362
0.10

0.504
0.106
0.035

0.528
0.13
0.059
0.043
0.285
0.039

0.035
-

0.059
0.01
INCHES

MIN
-

MAX
0.049
0.409
0.083
0.297
0.528

Dimension in mm/incheswww.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

12/12

2017.08 - Rev.B

Notice
Precaution on using ROHM Products
1.

Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you(Note 1)intend to use our Products in devices requiring extremely high reliability (such as medical equipment, transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ

2.

ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, whicha failure or malfunction of our Products may cause. The following are examples of safety measures:[a] Installation of protection circuits or other protective devices to improve system safety[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3.

Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
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product performance, reliability, etc, prior to use, must be necessary:[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
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residue after soldering[h] Use of the Products in places subject to dew condensation

4.

The Products are not subject to radiation-proof design.

5.

Please verify and confirm characteristics of the final or mounted products in using the Products.

6.

In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affectproduct performance and reliability.

7.

De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.

8.

Confirm that operation temperature is within the specified range described in the product specification.

9.

ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined inthis document.

Precaution for Mounting / Circuit board design
1.

When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect productperformance and reliability.

2.

In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PGA-E© 2015 ROHM Co., Ltd. All rights reserved.

Rev.003

Precautions Regarding Application Examples and External Circuits
1.

If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of thecharacteristics of the Products and external components, including transient characteristics, as well as static
characteristics.

2.

You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
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incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not beapplied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

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1.

Product performance and soldered connections may deteriorate if the Products are stored in the places where:[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation[d] the Products are exposed to high Electrostatic

2.

Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time isexceeding the recommended storage time period.

3.

Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.

4.

Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products ofwhich storage time is exceeding the recommended storage time period.

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A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

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Rev.003

Datasheet
General Precaution

1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any priornotice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.

3.

The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
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