light.augmented

MX-LN series

1550 nm band Intensity Modulators

Photline Modulator

The Photline MX-LN series are lithium niobate (LiNbO3) intensity modulators
designed for optical communications at data rates up to 44 Gb/s.
The X-cut design of these Mach-Zehnder modulators confer them anunmatched stability in a wide range of operational conditions, as well as azero chirp performance. Ixblue proprietary waveguide design offers a low
insertion loss combined with a high contrast. The MX-LN series are ideallysuited for 10 Gb/s up to Gb/s optical transmission with NRZ, RZ, DPSK,
Duo Binary modulation formats and are key device for a large variety of highbandwidth applications.

FEATURES• High bandwidth

MX-LN-10 Performance Highlights• X-cut for high stabilityParameter

MinTypMax

Unit• Low drive voltage

Operating wavelength

1530-1625nm• Low insertion loss

Insertion loss (option low IL)

-

2.7

-

dB

Electro-optical bandwidth

-

12-

GHz

Vp RF @50 kHz

-55.5

V

APPLICATIONS• Digital communications

Specifications given at 25 °C, 1550 nm• General purpose intensity modulation• Test and measurement

MX-LN-20 Performance Highlights

OPTIONS

Parameter

Min

TypMaxUnit• High extinction ratio versions

Operating wavelength

1530-1625nmInsertion loss (option low IL)-2.7-dB

Electro-optical bandwidth

-25-

GHz

Vp RF @50 kHz-5-V• 2000 nm, 1300 nm, 1060 nm, 850 nm

RELATED EQUIPMENTS

Specifications given at 25 °C, 1550 nm• RF amplifiers• MBC-DG Automatic Bias Controllers• ModBox-1550nm-44Gb/s-NRZ

MX-LN-40 Performance Highlights
Parameter

Min

TypMaxUnit

Operating wavelength

1530-1625nmInsertion loss-4-dB

Electro-optical bandwidth-30-GHz

Vp RF @50 kHz-5-V

Specifications given at 25 °C, 1550 nm

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MX-LN series

1550 nm band Intensity Modulators

Photline Modulator

MX-LN-10

10 GHz Intensity modulator
Electrical Characteristics
Parameter

SymbolConditionMin

TypMax

Unit

Electro-optic bandwidth

S21

RF electrodes, from 2 GHz

1012-

GHz

Ripple S21

DS21

RF electrodes, f < 12 GHz

-0.5

1dB

Electrical return loss

S11RF electrodes--12-10dB

Vp RF @50 kHz

VpRF50 kHz

RF electrodes, @1550 nm

-

55.5

V

Vp RF @10 Gb/s PRBS

VpRF10 Gb/s

RF electrodes, @1550 nm

-

6.5

7V

Vp DC electrodes

VpDC

DC electrodes-

45V

RF input impedanceZin-RF--50-

W

DC input impedanceZin-DC--

1-

MW

SymbolCondition

Min

Typ

Max

Unit

Crystal--Operating wavelengthl-

1530

1550

1625nmInsertion loss

IL

Without connectors

-

3.5

4.5

dB

Option Low IL, without connectors

-

2.7

3dB

DC extinction ratioER

Measured with narrow source
linewidth < 200 MHz

2022-dB

Optical return loss

ORL--40-45-dBChirpa--0.1

00.1-50 Ω RF input

Optical Characteristics
Parameter

Lithium Niobate X-Cut Y-Prop

All specifications given at 25°C, 1550 nm, unless differently specified

Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional
operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure
to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter

SymbolMinMaxUnit

RF input power

EPin-26dBmBias voltage

Vbias-20+20V

Optical input power

OPin-20dBmOperating temperature

OT0+70°C

Storage temperature

ST-40+85°C

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MX-LN series

1550 nm band Intensity Modulators

Photline Modulator

MX-LN-20

20 GHz Intensity modulator
Electrical Characteristics
Parameter

SymbolConditionMin

TypMax

Unit

Electro-optic bandwidth

S21

RF electrodes, from 2 GHz

2025-GHzRipple S21DS21RF electrodes, f < 20 GHz

-

0.5

1dB

Electrical return loss

S11RF electrodes--12-10dB

Vp RF @50 kHz

VpRF50 kHz

RF electrodes, @1550 nm

-55.5

V

Vp RF @20 Gb/s PRBS

VpRF20 Gb/s

RF electrodes, @1550 nm

-

5.5

6V

Vp DC electrodes

VpDC

DC electrodes

-

6.5

7V

RF input impedanceZin-RF--50-

W

DC input impedanceZin-DC--

1-

MW

SymbolCondition

MinTypMax

Unit

Crystal--Operating wavelengthl-

1530

1550

1625nmInsertion loss

IL

Without connectors-

3.54.5dB

Option Low IL, without connectors

-2.7

3dB

DC extinction ratioER

Measured with narrow source
linewidth < 200 MHz

2022-dB

Optical return loss

ORL--40-45-dB

Chirpa--0.1

00.1

-

50 W RF input

Optical Characteristics
Parameter

Lithium Niobate X-Cut Y-Prop

All specifications given at 25 °C, 1550 nm, unless different specified

Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional
operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure
to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter

SymbolMinMaxUnit

RF input power

EPin-28dBmBias voltage

Vbias-20+20V

Optical input power

OPin-20dBmOperating temperature

OT

0+70°C

Storage temperature

ST-40

+85°C

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MX-LN series

1550 nm band Intensity Modulators

Photline Modulator

MX-LN-4040 GHz Intensity modulator
Electrical Characteristics
Parameter

SymbolCondition

Min

TypMax

Unit

Electro-optic bandwidth

S21

RF electrodes, from 2 GHz

2830-GHz

Ripple S21

DS21

RF electrodes, f < 30 GHz

-

0.5

1dB

Electrical return loss

S11

RF electrodes--12-10dB

Vp RF @50 kHz

VpRF50 kHz

RF electrodes, @1550 nm-

56V

Vp DC electrodes

VpDC

DC electrodes, @1550 nm

-

6.5

7V

RF input impedanceZin-RF--50-W

DC input impedanceZin-DC-

1--

MW

SymbolCondition

MinTypMax

Unit

Crystal--Operating wavelengthl-

1530

1550

1625nmInsertion loss

IL

Without connectors

-

3.5

4.5

dB

DC extinction ratioER

Measured with narrow source
linewidth < 200 MHz

2022-

dB

Optical return loss

ORL-

-40-45-dB

Chirp

a--0.100.1-

50 Ω RF input

Optical Characteristics
Parameter

Lithium Niobate X-Cut Y-Prop

All specifications given at 25 °C, 1550 nm, unless different specified

Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional
operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure
to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter

SymbolMinMaxUnit

RF input power

EPin-28dBmBias voltage

Vbias-20+20V

Optical input power

OPin-20dBmOperating temperature

OT

0+70°C

Storage temperature

ST-40+85°C

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MX-LN series

1550 nm band Intensity Modulators

Photline Modulator
MX-LN-10 Typical S21 Curve

MX-LN-10 Typical S11 Curve

50-5-10-15-5S11 (dB)

S21 (dB)

0-10-20-25-30-15-35-200246810121416-40

024Frequency (GHz)6810121416

Frequency (GHz)MX-LN-20 Typical S21 Curve

MX-LN-20 Typical S11 Curve05-5-10-5

S11 (dB)

S21 (dB)

0-10-15-20-25-30-15-35-20-4005101520
Frequency (GHz)2530

MX-LN-40 Typical S21 Curve

05101520
Frequency (GHz)

2530MX-LN-40 Typical S11 Curve

50-50-10-15S11 (dB)

S21 (dB)-5-10-20-25-30-15-35-200510152025303540

Frequency (GHz)www.photonics.ixblue.com-4005101520253035

Frequency (GHz)p. 5 / 6

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40

MX-LN series

1550 nm band Intensity Modulators

Photline Modulator
Mechanical Diagram and Pinout
M1.6x0.35 - 6H

1. 5

121.5

All measurements in mm

82

65

1. 5

9. 65

4.54.75155

1 25

2.5n2.2

20.5

37.92
85
95

Port

5.08

142. 55. 08

Function

Note
Polarization
maintaining fiber, CorningPM
CREATIO
N
06/015-U25D,
2/2014SJ
1.5 meter. Buffer diameter
DESCRIPTION DDE LA REVLength
ISION
DESSINE 900DAmm
TE
VERIFIE
DDDIN

Optical input port01

OUT

Optical output port

RF

RF input port

1Ground2

DC

Pin feed through diameter 1.0 mm

3, 4

Photodiode cathode, anodePin feed through diameter 1.0 mm

IN D.
D
ECHELLE :1:1

TOL. GEN. :-MATIERE :TRAITEfiber,
MENT :Corning PM
QUAN15-U25D,
TITE :
Polarization
maintaining
Length 1.5 meter. Buffer diameter 900 mm -ATR SFF MX
PL-0854-MC-01

MX-LN-10: Wiltron female K (SMA compatible)

16, rue Auguste Jouchoux
MX-LN-20: Wiltron female K or V (optional)
25001 BESANCON- FRANCE
Tél. : +33 (0)3 81 85 31 80 - Fax : +33 (0)3 81 81 15 57
MX-LN-40: Wiltron female V
Ce document est la proprieté de PHOTLINE Technologies et ne peut être reproduit ou communiqué sans son autorisation

01

Pin feed through diameter 1.0 mm

Ordering information				BW = Bandwidth : 10 10 GHz 20 20 GHz 40 40 GHz
XX = Internal photodiode : 00 Not integrated PD PD Integrated
Y = Input fiber : P Polarization maintaining S Standard single mode
Z = Output fiber : P Polarization maintaining S Standard single mode
AB = Intput connector : 00 bare fiber FA FC/APC FC FC/SPC
CD = Output connector : 00 bare fiber FA FC/APC FC FC/SPC
Note : optical connectors are Seikoh-Giken with narrow key or equivalent

About us
iXBlue Photonics includes iXBlue iXFiber brand that produces specialty optical fibers and Bragg gratings based fiber
optics components and iXBlue Photline brand that provides optical modulation solutions based on the company lithium
niobate (LiNbO3) modulators and RF electronic modules.
iXBlue Photonics serves a wide range of industries: sensing and instruments, defense, telecommunications, space andfiber lasers as well as research laboratories all over the world.
Ixblue reserves the right to change, at any time and without notice, the specifications, design, function orform of its products described herein. All statements, specification, technical information related to theproducts herein are given in good faith and based upon information believed to be reliable and accurate at
the moment of printing. However the accuracy and completeness thereof is not guaranteed. No liability isassumed for any inaccuracies and as a result of use of the products. The user must validate all parameters for each application before use and he assumes all risks in connection with the use of the products

3, rue Sophie Germain
25 000 Besançon - FRANCE
Tel. : +33 (0) 381 853 180 - Fax : + 33 (0) 381 811 557
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07_2015_PT_SP_ED0

MX-LN-BW-XX-Y-Z-AB-CD