＜Analog IC＞

RT8Ｈ112ＣUVLO built-in IGBT gate driver with Power cut circuit

unit：mmOUTLINE DRAWINGDESCRIPTION
RT8H112C is combined transistor composed by NPN

2.8transistors, PNP transistors and resistors.

0.65

Miniaturization of the set, and significant reductions

1.50.65

operation when the power supply voltage becomes
about 16V or more, and stops operation③

when it becomes 14V or less. It has a circuit⑥④0.33

2.8

RT8H112C has a built-in UVLO circuit, and starts①112

this transistor.

0.95 0.95

of parts and person-hours will be possible by using

configuration as an IGBT driver, and when applying

0.81

terminal outputs a Low signal.
When High to Low is applied to the GATEIN terminal,
when the voltage becomes about 2.5V or less,0.12

the voltage becomes about 2.7V or more, the B

0～0.1

1.1

from Low to High to the GATEIN terminal, whenB terminal outputs a High signal.

PIN layout

FEATURES●Miniaturization of a set●Built-in UVLO(Ideal for 20V systems)●Since the output is constant current, the IGBT

①A

⑥ON/OFF②B⑤GND③VCC④GATEIN

can be operated safely●Built-in power cut circuit(ICCoff = 0 during power cut)

APPLICATION●IGBT gate driver

BLOCK DIAGRAM

VCC
ON/OFFPower CutcircuitUVLO

GATEINA

Driver circuit
B

GND

221108

＜Analog IC＞

RT8Ｈ112ＣUVLO built-in IGBT gate driver with Power cut circuit

ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted.)
SymbolVcc
VGIN
VON/OFFParameter
Power supply voltage
GATE IN terminal input applied voltage
ON/OFF terminal input applied voltage

Pd

Internal power dissipationKθTjTstg
ToprThermal derating
Junction temperature
Storage temperature
Operating temperatureConditionTa≧25℃
keep dry
keep dryRatings
30-0.3~10-0.3~10Unit
VVV

200mW

1.6150-40～150-20～85mW/℃℃℃℃

ELECTRICAL CHARACTERISTIC (Ta=25℃,VCC=20V,VON/OFF=5V unless otherwise noted.)
SymbolParameter

VCC
VCTH1
VCTH2

ICC1
ICC2

Operating supply voltage range
Operation start voltage
Operation stop voltage
Circuit current(During power cut)
Circuit current1
Circuit current2

VOA2

Output voltage A2

VOB2

Output voltage B2

ICCoffVth0
Vth1Vth2
IOUTA1IOUTA2IINB
IOUTBThreshold voltage 1(Low→High)
Threshold voltage 1(Low→High)
Threshold voltage 2(High→Low)
Output A outflow current 1
Output A outflow current 2
Output B inflow current
Output B outflow current

GATEIN=5V、VMB:High→Low
GATEIN=5V、VMB:Low→High

Min.
18
15.0
13.0

Limits
Typ.
20
16.1
14.0

Max.
26
17.2
15.0

VON/OFF＝０V-01uA

GATEIN=0V
GATEIN=5V
GATEIN=5V
Pull-down resistor(to A terminal):1MΩ
GATEIN=5V
Pull-down resistor(to A terminal):1MΩ

0.91
0.92

1.30
1.31

1.69
1.70

mA
mA

16.2

18.6

20.0

V-0.07

0.28

V

GATEIN=0V、VMB:Low→High

0.50

0.85

1.20

V

GATEIN：0→5V、VMB：High→Low

2.62

2.78

2.93

V

GATEIN：5V→0、VMB：Low→High

2.34

2.48

2.62

V

GATEIN＝0V、A=B=0.7V IMAGATEIN=5V、A=18V IMAGATEIN=5V、B=0.3V IMBGATEIN=0V、B=0.7V IMB

-1.50
870
-2.25

0-1.151250-1.73

1-0.80
1620
-1.21

uA
mA
uA
mA

Test conditionUnitVVV221108

＜Analog IC＞

RT8Ｈ112ＣUVLO built-in IGBT gate driver with Power cut circuit

APPLICATION CIRCUIT
VCC

ON/OFFVCC

Power Cutcircuit

2SC3052UVLOGATEINA150Ω

Driver circuit

MCU10Ω
B
2SC3052

GND≪Typical Characteristic≫
Thermal Derating curvePower Dissipation Pd[mW]

250

200

150

100500025

5075100125150

Ambient Temperature Ta[℃]221108

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Nov.2022