＜MFT＞

RT8H072E

Preliminary*This is tentative specification.

IGBT gate interception circuit
DESCRIPTION
RT8H072E is composed by NPN transistors,
PNP transistors and resistors.
It can miniaturization of a set and reduce parts ortime necessary for completion.
Connected This MFT with the level-shift circuit of IPM,
It can prevent the fault that IGBT gate turn onat the same time.

OUTLINE DRAWINGFEATURES● Miniaturization of a set.
● Open collector output.

APPLICATION
The protection of IGBT Gate.
Unit：mm

PIN CONFIGURATION①②③④⑧⑦⑥⑤①VCC②IN
③GND
④N.C.

⑧OUT4⑦OUT3⑥OUT2⑤OUT1BLOCK DIAGRAMVCC

OUT1OUT2OUT3OUT4VCC

VCC
High
LEVEL
VCC

S

IN

R

Q

VCC

Low
LEVEL

GND

110427
（1／3）

＜M

F

T＞

RT8H072E

Preliminary*This is tentative specification.

IGBT gate interception circuit
ABSOLUTE MAXIMUM RATINGS (Ta＝25℃)
Parameter
Conditions
Symbol
Vcc
IOUT
VOUT
VIN
PdKθ
Tj
Tstg
Topr

Supply voltage
Output current
Output voltage
Input voltage

OUT1～4 common
OUT1～4 common

Internal power dissipation

Thermal derating
Junction temperature
Storage temperature
Operating temperature

ELECTRICAL CHARACTERISTIC

Ta≧25℃(keep dry)Ratings

Unit

1010-0.3～VCC-0.3～VCC
200
1.6
150－40～150-20～85

VmAVVmW
mW/℃℃℃℃(Ta=25℃,VCC=5V unless otherwise noted.)
Test conditions

Designed value
TypMaxSymbolParameter

VCC

Operating supply voltage range

359V

ICC_ON

Circuit current in on states IN=5V

-400

600uA

ICC_OFF

Circuit current in off states IN=0V-400600uAMin

Unit

VTHH

Threshold voltage in level HI

IN=0V→HIGH

3.03

3.16

3.28

VVTHL

Threshold voltage in level Low IN=3.5V→LOW

2.43

2.53

2.63

V-1-0.3-uA-0.85

1.5V-01uA

IIN

IN input current

VOL

OUT saturation voltage

ILO

OUT leak current

IN=VTHL(MIN)
IN=5V,IOUT=5mA
OUT1,OUT2,OUT3,OUT4 common
IN=0V,VOUT=5V
OUT1,OUT2,OUT3,OUT4 common

THERMAL DERATING

POWER DISSIPATION Pd[ｍW]250200150100
5000255075 85 100125150

AMBIENT TEMPERATURE Ta [℃]110427（2／3）

＜MFT＞

RT8H072E

Preliminary*This is tentative specification.

IGBT gate interception circuit
APPLICATION CIRCUIT EXAMPLES
IGBT11KΩ
UP-IN

RES4

UP-OUTLVIC

VP-OUTLVIC

WP-OUTLVIC

IGBT21KΩ
VP-IN

RES51KΩ

WP-IN
RES6

RES10

IGBT3TR11KΩ
UN-IN

UN-OUT

RES7

LVIC

RES11
IGBT4
TR21KΩ

タイミングチャート
VN-IN

VN-OUT

RES8

VCC

RES1470KΩ

1S

VCC

S

IN

3KΩ

R
RES2C1OUT1

OUT2

OUT3WN-OUT

LVIC
IGBT6

OUT4VCC

VCC
High
LEVEL

IN

RES3RES9CVCC

5V

IGBT5TR31KΩ
WN-IN

LVIC

RES1212S

1S

Q

12S

VCC

1S
12S

LowLEVEL

1S
GND

12S

RT8HXXXE

Timing diagram
High LEVELLOW LEVELIN*OUT1～OUT4,VCC ≧-0.3*-0.3≦IN≦VCCthroughOUT1through
P-SIDE IGBT1 OFF
through

OUT2P-SIDE IGBT3 OFFthrough

OUT3OUT4through
P-SIDE IGBT5 OFF

throughthrough
N-SIDE IGBT2,4,6 ON

110427（3／3）

Keep safety first in your circuit designs!
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placementof substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap.
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Aug.2016