VT6M1
Datasheet

20V Nch+Pch Small Signal MOSFETl Outline

SymbolVDSSRDS(on)(Max.)
IDPD

Tr1:Nch Tr2:Pch
20V-20V

3.5Ω

3.8Ω

VMT6±100mA ±100mA
150mW

l Features
1) Low on - resistance.
2) Small package(VMT6)3) Low voltage drive(1.2V drive)l Inner circuitl Packaging specifications

Embossed
TapePacking
l Application

SwitchingType

Reel size (mm)180

Tape width (mm)8Basic ordering unit (pcs)8000

Taping code

T2R

MarkingM01

l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)ParameterSymbolValue
Tr1:Nch Tr2:Pch

Unit

Drain - Source voltage

VDSS

20-20V

Continuous drain current

ID±100±100mAPulsed drain current

IDP*1±400±400mA

Gate - Source voltage

VGSS±8±10V

Power dissipation

total

PD*2element

150120mW

Junction temperature

Tj

150℃

Operating junction and storage temperature range

Tstg-55 to +150℃

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Datasheetl Electrical characteristics (T a = 25°C) <Tr1>

Parameter

SymbolDrain - Source breakdownvoltage
Breakdown voltage
temperature coefficientConditions

Min.

Typ.

Max.

Unit

V(BR)DSS VGS = 0V, ID = 1mA

20--V-

29.0-mV/℃

ΔV(BR)DSS

ID = 1mA

ΔTj

referenced to 25℃

Zero gate voltage
drain current

IDSS

VDS = 20V, VGS = 0V

--

1μA

Gate - Source leakage current

IGSS

VGS = ±8V, VDS = 0V--±10μA

Gate threshold voltage

VGS(th)VDS = 10V, ID = 100μA

0.3-

1.0V

ΔVGS(th)ID = 1mA--1.6-mV/℃

VGS = 4.5V, ID = 100mA-2.53.5

VGS = 2.5V, ID = 100mA

-

3.0

4.2

RDS(on)*3 VGS = 1.8V, ID = 50mA

-

3.8

5.3

VGS = 1.5V, ID = 20mA

-

4.5

9.0

VGS = 1.2V, ID = 10mA

-

6.0

18.0

Gate threshold voltage
temperature coefficient

Static drain - sourceon - state resistanceΔTjreferenced to 25℃

ΩForward Transfer
Admittance|Yfs| *3

VDS = 10V, ID = 100mA

180--Input capacitanceCiss

VGS = 0V-

7.1-

Output capacitance

CossVDS = 10V-

3.3-Reverse transfer capacitance

Crssf = 1MHz-

1.7-

Turn - on delay timetd(on)*3

VDD ⋍ 10V, VGS = 4.5V-5-

Rise time

tr*3

ID = 50mA-4-Turn - off delay timetd(off)*3

RL = 200Ω

-20-

Fall time

tf*3

RG = 10Ω-

38-

Min.

Typ.

Max.

Unit--

1.2

V

Parameter

Forward voltage

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SymbolVSD*3

Conditions
VGS = 0V, IS = 100mA

2/16mSpF

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VT6M1

Datasheetl Electrical characteristics (T a = 25°C) <Tr2>

Parameter

SymbolDrain - Source breakdown
voltage
Breakdown voltage
temperature coefficient

Conditions

V(BR)DSSVGS = 0V, ID = -1mA

ΔV(BR)DSS

ID = -1mA

Min.

Typ.

Max.

Unit

-20--V--21.9

-mV/℃

ΔTj

referenced to 25℃

Zero gate voltage
drain current
Gate - Source leakage current

IDSS

VDS = -20V, VGS = 0V---1μAIGSS

VDS = 0V, VGS = ±10V--±10μA

Gate threshold voltage

VGS(th)VDS = -10V, ID = -100μA-0.3--1.0V

Gate threshold voltage
temperature coefficient

ΔVGS(th)ID = -1mA-2.4-mV/℃

VGS = -4.5V, ID = -100mA

-2.5

3.8

VGS = -2.5V, ID = -50mA

-3.4

5.1

RDS(on)*3 VGS = -1.8V, ID = -20mA

-4.8

8.2

VGS = -1.5V, ID = -10mA

-6.0

13.2

VGS = -1.2V, ID = -1mA

-13.3

53.2

Static drain - sourceon - state resistanceΔTjreferenced to 25℃

Forward Transfer
Admittance|Yfs| *3

VDS = -10V, ID = -100mA120--Input capacitanceCiss-15.0-Output capacitanceCoss

VGS = 0V
VDS = -10V-4.0-

Reverse transfer capacitance

Crss-

1.5-

Turn - on delay timetd(on)*3f = 1MHzVDD ⋍ -10V, VGS = -4.5V-

46-

Rise time

tr*3

ID = -50mA-62-

Turn - off delay timetd(off)*3tf*3

RL = 200Ω

-325-

RG = 10Ω

-137-

Fall time
Parameter

Forward voltage

ΩmS

pF

ns

SymbolConditions

Min.

Typ.

Max.

Unit

VSD*3

VGS = 0V, IS = -100mA---1.2

V*1 Pw≦10μs , Duty cycle≦1%*2 Each terminal mounted on a reference land.
*3 Pulsed

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Datasheetl Electrical characteristic curves <Tr1>

Fig.1 Power Dissipation Derating Curve

Fig.2 Drain Current Derating Curve

Fig.3 Typical Output Characteristics(I)Fig.4 Typical Output Characteristics(II)www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

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VT6M1

Datasheetl Electrical characteristic curves <Tr1>

Fig.5 Breakdown Voltage vs.
Junction Temperature

Fig.6 Typical Transfer Characteristics

Fig.7 Gate Threshold Voltage vs.
Junction Temperature

Fig.8 Forward Transfer Admittance vs.
Drain Current

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Datasheetl Electrical characteristic curves <Tr1>

Fig.9 Static Drain - Source On - State
Resistance vs. Gate Source Voltage

Fig.10 Static Drain - Source On - State
Resistance vs. Junction Temperature

Fig.11 Static Drain - Source On - State
Resistance vs. Drain Current (I)Fig.12 Static Drain - Source On - State
Resistance vs. Drain Current (II)www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

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Datasheetl Electrical characteristic curves <Tr1>

Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current (lII)

Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current (IV)Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current (V)Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current (VI)www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

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Datasheetl Electrical characteristic curves <Tr1>

Fig.17 Typical Capacitance vs.
Drain - Source Voltage

Fig.18 Switching Characteristics

Fig.19 Source Current vs.
Source Drain Voltage

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VT6M1

Datasheetl Electrical characteristic curves <Tr2>

Fig.20 Power Dissipation Derating Curve

Fig.21 Drain Current Derating Curve

Fig.22 Typical Output Characteristics(I)Fig.23 Typical Output Characteristics(II)www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

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VT6M1

Datasheetl Electrical characteristic curves <Tr2>

Fig.24 Breakdown Voltage vs.
Junction Temperature

Fig.25 Typical Transfer Characteristics

Fig.26 Gate Threshold Voltage vs.
Junction Temperature

Fig.27 Forward Transfer Admittance vs.
Drain Current

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VT6M1

Datasheetl Electrical characteristic curves <Tr2>

Fig.28 Static Drain - Source On - State
Resistance vs. Gate Source Voltage

Fig.29 Static Drain - Source On - State
Resistance vs. Junction Temperature

Fig.30 Static Drain - Source On - State
Resistance vs. Drain Current (I)Fig.31 Static Drain - Source On - State
Resistance vs. Drain Current (II)www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

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VT6M1

Datasheetl Electrical characteristic curves <Tr2>

Fig.32 Static Drain - Source On - State
Resistance vs. Drain Current (lII)

Fig.33 Static Drain - Source On - State
Resistance vs. Drain Current (IV)Fig.34 Static Drain - Source On - State
Resistance vs. Drain Current (V)Fig.35 Static Drain - Source On - State
Resistance vs. Drain Current (VI)www.rohm.com© 2016 ROHM Co., Ltd. All rights reserved.

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VT6M1

Datasheetl Electrical characteristic curves <Tr2>

Fig.36 Typical Capacitance vs.
Drain - Source Voltage

Fig.37 Switching Characteristics

Fig.38 Source Current vs.
Source Drain Voltage

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VT6M1

Datasheetl Measurement circuits <Tr1>
Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT

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Fig. 1-2 SWITCHING WAVEFORMS

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Datasheetl Measurement circuits <Tr2>Fig. 2-1 SWITCHING TIME MEASUREMENT CIRCUIT

Fig. 2-2 SWITCHING WAVEFORMS

l NoticeThis product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

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VT6M1

Datasheetl Dimensions

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Notice
Precaution on using ROHM Products
1.

Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you(Note 1)
intend to use our Products in devices requiring extremely high reliability (such as medical equipment, transport
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Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for anydamages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for SpecificApplications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPANUSAEU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
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7.

De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
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Precaution for Mounting / Circuit board design
1.

When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect productperformance and reliability.

2.

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please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

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Rev.003

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Rev.003