＜Multi‑Function Transistor＞

RT8H065C
latch circuit

0.6①⑥②⑤③④0.1
0〜0.1

APPLICATION
Latch operation to protect over voltage andover current, such as a AC adapter.

EIAJ：SC‑74
JEDEC:SOT23‑665Out line
① IN1② IN3③ IN2④ OUT
⑤ GND
⑥ VCC

4065
１BLOCK DIAGRAM

0.61.1
0.6

FEATURE● The miniaturization of a set
and high‑density mounting are possible.
● The power supply voltage range of operation
is wide.

Unit:mm2.81.6VCC

IN161233IN22IN3OUT 45GND（ 1 ／ 3 ）0.4

PIN CONFIGURATION

0.95 2.90.95

DESCRIPTION
RT8H065C is a NPN transistor, a PNP transistor,
and the compound transistor constituted
by resistance. This transistor enables
a miniaturization of the set and a great
reduction in parts and man‑hours.
The circuit is composed as a latch function.

FUNCTIONAL DESCRIPTION OF TERMINAL
Pin number

Symbol123456IN1IN3IN2
OUT
GND
Vcc

Functional Description
Input 1
Input 3
Input 2
OutputGroundSupply voltage

ABSOLUTE MAXIMUM RATINGS（unless otherwise noted, Ta＝25℃）
SymbolParameter

VccIsinkVOUTVIN
PdKθ
TjTstgTopr

Supply voltage
Output sink current
Output voltage
Input voltage
Power Dissipation
Thermal derating
Junction temperature
Storage temperature
Operating temperature

Conditions

Ta≧25℃

Ratings

Unit

3715Vcc
‑0.4
200
1.6
150
−40〜+150−20〜+75

VｍA
V
V
mW
mW/℃℃
℃℃

ELECTRICAL CHARACTERISTICS（Vcc=22V、Ta=25℃ Unless otherwise noted）
SymbolParameter

Vcc

Supply voltage

Icc（OFF） Off‑state Circuit current
Icc（ON）

On‑state Supply current

VIN1thIN1 threshold voltage

VIN2thIN2 threshold voltageVIN3th

IN3 threshold voltage

Vosat

Output saturation voltage

Test condition
Vcc series resistance 82KΩ
output pull‑up resister 30KΩVcc series resistance 82KΩ
output pull‑up resister 30KΩVcc series resistance 82KΩ
output pull‑up resiste 30KΩVcc series resistance 82KΩ
output pull‑up resiste 30KΩVcc series resistance 82KΩIN1 pull‑up resiste 30KΩVcc series resistance 82KΩ
output pull‑up resiste 30KΩVcc series resistance 82KΩ
Io=6mA（ 2 ／ 3 ）MinLimits
TypMax−2236

V−01uA−250

1.0

1.21.4V0.540.690.84

V

0.50.650.8

V

0.40.6

VUnituA

THERMAL DERATING CURVE

IN1 THRESHOLD VOLTAGE VS
AMBIENT TEMPERATURE
1.62001.41.2
VIN1th[V]

POWER DISSIPATION Pb[ｍW]

250

1501001.00.80.6
0.4
0.2500.0‑250025

AMBIENT TEMPERATURE

0255075

1001255075[℃]

150

AMBIENT TEMPERATURE Ta[℃]
IN3 THRESHOLD VOLTAGE VS
AMBIENT TEMPERATURE

0.9

0.8

0.8

0.7

0.7

0.60.6

VIN3th[V]VIN2th[V]IN2 THRESHOLD VOLTAGE VSAMBIENT TEMPERATURE

0.50.40.30.50.4
0.30.20.2

0.1

0.1

0.00.0‑2502550

AMBIENT TEMPERATURE

75‑25[℃]

APPLICATION CIRCUIT EXAMPLE

Guard signal
H：Output latch
L：Latch cancel

025

AMBIENT TEMPERATURE

162534

Guard signal
L：Output latch
H：Latch holding（ 3 ／ 3 ）

50

[℃]

75

Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there isalways the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placementof substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap.
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Aug.2016