Semiconductor solutions forhealthcare applications

STMicroelectronics

www.st.com/medical

At STMicroelectronics, we have developed our healthcare product and service portfolio based on long-term
research. We are involved in government-funded programs, collaborate with international universities and are amember of acknowledged healthcare consortia, such as the Continua Health Alliance.

Healthcare market segments and application examples
Portable, telehealth monitoring

Wellness, fitness, assisted living

Clinical, diagnostics and therapy

Medical imaging

Blood pressure monitors
Temperature meters
Blood glucose meters
Blood oximeters
Hearing aids
Portable ECG

Pedometers
Heart rate monitors
Fall detection
Wheelchairs
Hospital beds
Drug dispensers

Patient monitoring
Respirators
Infusion pumps
Automated external defibrillators(AED)
Electrocardiograms (ECG)

Ultrasound
Magnetic resonance imaging (MRI)
Positron emission tomography (PET)
Endoscopes

Our position among the top-ranked semiconductor manufacturers, combined with strong cooperation with global
healthcare leaders, enables us to develop optimized process technology and to design semiconductor devices
with best-fit characteristics.
We are addressing the healthcare market with a broad portfolio of devices, such as discrete devices, low-power
microcontrollers, image sensors, memories, MEMS (micro-electro-mechanical systems), thin-film batteries andanalog, digital and mixed-signal ICs.
In addition to our standard products, ST offers our customers the possibilities of application-specific devices andaccess to our leading-edge silicon processes and package technologies for customer-designed products to give
added performance and value to the end product.
Let STMicroelectronics’ experience in the healthcare and medical markets help you meet your customers’ needs.

Typical healthcare application diagram
Sensors
Real world
AFE
Temperature
PressureLight
Vibration
ChemicalAir flow
Acoustic
HumidityHall
Ultrasound
………

Amp

Displayinterface

Display

Userinterface

KeypadAudiointerface

Speaker

ADC
Control unit

Connectivity
ZigBeeAntenna
Protection

BluetoothUSB
MemoryPower management
AC-DC
converter

2

Battery
chargerDC-DC
converter

Ethernet

Data exchangeFeatured products
HMx011
Integrated diagnostic-quality bio-potential acquisition IC with 1, 2 or 3 differential channels
The HMx01D devices are fully integrated, diagnostic-quality bio-potential acquisition systems with 1, 2 or 3 differential
channels. A fully-integrated high-pass filter removes the half-cell DC value so the channels work with the AC component only.
Each channel provides high resolution and low-noise conversion of bio-potential signals up to 10 kHz. The input connection
circuit matrix guarantees maximum flexibility in terms of electrodes, cables and connectors. The D versions include a dedicatedimpedance measurement channel that can be used to measure both body impedance average value and body impedance
variation due to respiration. This channel delivers both the real and the imaginary parts of the body and the breathing
impedances.

Key features
QQ 1, 2 or 3 bio-potential acquisition

QQ Multi master/slave configuration

QQ Maximum data rate: 10 KSPS

channels with integrated analog
high-pass filters
QQ 1 bio-impedance measurement
channel (D version) with 2- or 4-wiremeasurement
QQ Integrated configurable digital
filtering and preprocessing

to support up to 16 channels (12bio-potential acquisitions and 4 bioimpedance channels)
QQ SPI serial interface
QQ Low supply voltage: 1.7 to 3.6 V
QQ CMRR: -126 dB

QQ Less than 2 mW per channel at full

CIP
CIN

Current
injection

IN1P
IN1N
IN2P
IN2N

RA

IN3P
IN3N

Input
connection
circuitBody
impedance measurement

DC and AC
contact check

ECG and pacemaker channel # 1

DC and AC
contact check

ECG and pacemaker channel # 2

DC and AC
contact check

ECG and pacemaker channel # 3

bandwidth and resolution
QQ Internal or external clock

Impedancebus

Ch1 busHM301D

Digital filteringandpreprocessing

Ch2 bus

SPI
slave

MISO
MOSI
SS
SCK

Pace makerdetection

Ch3 bus

Bat_bus

RL

LL

RLD
WCT
ShieldWCT circuit
and drivers

Voltagereferences

Timinglogic and clock

Low-voltage supervisoryand battery charge check

Note: 1. For the complete part number list, refer to the ECG unit product table at the end of the brochure.

3

STHV748
Integrated high-performance ultrasound pulse controller
The STHV748 is a quad, high-voltage fully-monolithic pulser IC mainly intended for medical ultrasound imaging applications.
An ultrasound imaging system transmits ultrasound waveforms generated from a piezoelectric transducer. As soon as thetransmission ends, the same transducer is then switched to receive mode and the echoes, are then converted into lowvoltage signals. These signals are further conditioned, followed by post processing, to give the final image. The STHV748
correctly drives the piezoelectric transducer during the transmission phase and routes the received echoes to the receiving
chain by means of an integrated T/R switch. The excellent STHV748 pulse symmetry (5 levels), while exciting the piezoelectrictransducer, delivers low second-order distortion resulting in better image quality.

Key features
QQ 0 to ±90 V output voltage
QQ Up to 20 MHz operating frequency
QQ Embedded low-power, floating

high-voltage drivers
QQ ±2 A source and sink current in PW

and CW modes
QQ Greater than 42 dB second-

harmonic suppression
QQ Dedicated half bridge for continuous

wave operations
QQ Fully-integrated clamping-to-Tx
beamformer

HVtransmitter

Pulsernoise blocking diodes

T/R
switchQQ Latch-up free using HV SoI

technology
Rxbeamformer

4

To/from probeground function
QQ Fully-integrated T/R switch and

ADC

PGA

TGC

LNA

8/32‑bit ultra‑low‑power MCUs
STMicroelectronics’ ultra‑low‑power portfolio includes a full range of 8‑bit and 32‑bit MCUs. It addresses most healthcare
applications requiring reduced current consumption, from ultra‑simple, cost‑optimized feature needs to complex,
high‑performance requirements.

Key features
QQ Platform for 8‑bit STM8L and 32‑bit STM32L MCUs

QQ Advanced analog functions down

to 1.8 V

QQ ST’s 130 nm ultra‑low‑leakage process technology – speed and power

consumption are independent of MCU power supply
QQ Ultra‑low voltage supply: 1.65 to 3.6 V

QQ Fast wake up
QQ On‑board security and safety

features for critical applications

STM8L
QQ 8-bit MCU: up to 16 MIPS at 16 MHz
QQ 2 to 64 Kbytes of embedded Flash,

up to 4 Kbytes of SRAM and up to
2 Kbytes of EEPROM
QQ Up to four ultra-low-power modes:
down to 350 nA with SRAM andcontext retention
QQ Run mode dynamic consumption
down to 150 μA/MHzQQ Free touch‑sensing library

STM8L15x consumption values
Typical @ 25 °C
192 µA/MHz
90 µA/MHz
5.1 µA
Dynamic
Run
From Flash3.0 µA

DynamicRun
Low-powerRun@ 32 kHz

From RAM1.2 µA
Low-power
Wait@ 32 kHz

Notes:- POR/PDR on- BOR option at 2.4 µA- Run and Wait consumption values are independent of VDD

QQ 32-bit ARM Cortex™-M3:

up to 33 DMIPS at 32 MHz
QQ Pin‑to‑pin compatibility with
STM32F series (except VBAT)QQ 32 to 384 Kbytes of embedded
Flash, up to 48 Kbytes of SRAM and
up to 12 Kbytes of data EEPROM
QQ Six ultra-low-power modes:
down to 300 nA
QQ Ultra-low-power dynamic modes:
low-power run down to 9 µA;
low-power sleep down to 4.9 µA
with one timer
QQ Economical run mode consumption
down to 230 μA/MHz from Flash
at zero-wait state with dynamic
voltage scaling (3 ranges)

0.4 µAHalt- RAM content preserved- Startup time from active Halt 5 µs
- Active Halt and Halt values measured at VDD = 1.8 V

STM32L consumption values
Typical @ 25 °C
230 µA/MHz
186 µA/MHz

Run

Run

From Flash
Range 3

From RAM
Range 39 µA
4.9 µA
Low-powerRun@ 32 kHz

Low-powersleep+ 1 timer@ 32 kHz

Notes:- POR/PDR on- BOR option at 2.4 µA- Run and Sleep consumption value are independent of VDD- Low-power Run and Low-power Sleep are measured with Flash off

1.3 µA/
0.45 µA
Stop
with orwithout
RTC

1.0 µA/
0.3 µA
Standbywith orwithout RTC- RAM content preserved- Startup time from Stop 8 µs
- Stop and standby values measured at VDD = 1.8 V

Flash size (bytes)
384 K
Performance(MIPS)STM32L

ActiveHalt with
RTC

STM8L

STM32L2K
20 pins

Integration (features)

144 pins

Pin count

5

INEMO-M1
The smallest 9-axis inertial system of the iNEMO® SoB family
INEMO-M1 is the first member of the iNEMO system on board (SoB) family. It integrates multiple sensors with a powerfulcomputational core and provides reliable, drift-free 3D orientation estimation (roll, pitch and yaw, quaternions, rotation matrix),
as well as sensor data.
This 9 degrees-of-freedom inertial system represents a fully integrated solution that can be used in numerous applications suchas virtual reality, augmented reality, image stabilization, human machine interfaces, robotics and inertial body tracking.
A complete set of communication interfaces in a very small size form factor (13 x 13 x 2 mm) make the INEMO-M1 system onboard a flexible solution for effortless orientation estimation in embedded applications.

Key features
QQ Flexible interfaces: CAN, USART,SPI and I2C serial interfaces;
full-speed USB 2.0
QQ Two power supply options: internal
regulator (3.6 to 6 V), external
regulated voltage (2.4 to 3.6 V)
QQ Embedding real-time algorithm tocalculate attitude and heading (roll,
pitch and yaw angles, quaternions
or rotation matrix)
QQ In application programming
interfaces for firmware upgrading

LDS3985
Voltage regulator

LSM303DLHC
3-axis accelerometer
3-axis magnetometer

STM32F103
MCU

Host
MCU

3-axis gyroscope
L3G4200D
Resonator
INEMO-M1

LIS3DH
Ultra-low-power accelerometer
The LIS3DH is an ultra-low-power, high-performance 3-axis linear accelerometer belonging to the nano family, with a digital
I2C/SPI serial interface standard output. The device features ultra-low-power operating modes that allow advanced powersaving and smart embedded functions. The LIS3DH has dynamically selectable full scales of ±2g/±4g/±8g/±16g and iscapable of measuring accelerations with output data rates from 1 Hz to 5 kHz. The self-test capability allows the user to checkthe functioning of the sensor in the final application.

Key features
QQ Ultra-low power consumption:

QQ 6D/4D orientation detection

down to 2 μA
QQ ±2g/±4g/±8g/±16g dynamicallyselectable full scale
QQ Embedded 96-level FIFO of 16-bit
data output
QQ Embedded temperature sensor and
ADC converter

QQ Wide supply voltage range: 1.7 to

6

3.6 V
QQ Fully programmable interrupt

generator
QQ Wake-up and free-fall detection
QQ Click and double-click recognition

MP34DT01
High-performance, low-power digital MEMS microphone with 63 dB SNR
The MP34DT01 is an ultra-compact, low-power, omnidirectional, digital MEMS microphone built with a capacitive sensing
element and an IC interface. The sensing element that detects the acoustic waves is manufactured using a special silicon
micromachining process dedicated to produce audio sensors. The IC interface is manufactured using a CMOS process sothat a dedicated circuit may be designed to provide a digital signal externally in PDM format. The MP34DT01 has an acoustic
overload point of 120 dBSPL with a 63 dB signal-to-noise ratio and -26 dBFS sensitivity.

Key features
QQ Single supply voltage

QQ PDM output

QQ Low power consumption

QQ HCLGA package

QQ 120 dBSPL acoustic overload point

QQ Top port design

QQ 63 dB signal-to-noise ratio

QQ SMD compliant

QQ Omnidirectional sensitivity

QQ EMI shielded

QQ –26 dBFS sensitivity

LPS331AP
High-resolution digital pressure sensor
The LPS331AP is an ultra compact absolute piezoresistive pressure sensor. It includes a monolithic sensing element and an ICinterface to take the information from the sensing element and to provide a digital signal to the external world.
The sensing element consists of a suspended membrane formed inside a single mono-silicon substrate. It is capable ofdetecting pressure and is manufactured using a dedicated process developed by ST, VENSENS.

Key features
QQ 260 to 1260 mbar absolutepressure range
QQ High-resolution mode:
0.020 mbar RMS
QQ Low power consumption:
QQ Low-resolution mode: 5.5 µA
QQ High-resolution mode: 30 µA
QQ High overpressure capability:
20x full scale

QQ Embedded temperaturecompensation
QQ Embedded 24-bit ADC
QQ Selectable ODR from 1 Hz to 25 Hz
QQ SPI and I2C interfaces
QQ Supply voltage: 1.71 to 3.6 V
QQ High shock survivability: 10000 g

LDCL015XX
150 mA capless ultra-low-drop linear regulator simplifies power management designs
The LDCL015XX provides 150 mA from an input voltage ranging from 1.8 to 5.5 V, with a typical dropout voltage of 50 mV. It
is stable with no input or output capacitor. Low quiescent current, low noise and capless operation make it suitable for lowpower battery-powered applications and reduces the board size required. Typical power supply rejection ratio is 52 dB at low
frequencies, and starts to roll off at 10 kHz. The enable logic control function puts the LDCL015XX in shutdown mode, reducing
the total current consumption to less than 1 μA. The device also includes short-circuit constant-current limit and thermal
protection.

Key features
QQ No input or output capacitor

QQ Low noise

required
QQ Input voltage: 1.8 to 5.5 V
QQ Very low drop: 50 mV at 100 mA
load
QQ ± 2% output voltage accuracy
QQ Output voltage tolerance: ± 3%

QQ 150 mA guaranteed output current
QQ Available in fixed and adjustable

output voltages, from 0.8 V in
100 mV steps
QQ Internal current and thermal limit

7

M24LR16E and M24LR64E
Dual Interface EEPROM
The M24LR16E and M24LR64E feature both an I2C and an RF interface, and so provide the flexibility to remotely program or
update electronic products anytime during their lifetime and anywhere in the supply chain. RFID and NFC compatible, they areused to read measurements from portable healthcare applications and update the configuration data of clinical devices without
powering on the device. They also feature an innovative energy harvesting function which can enable battery-less designs or
greatly improve battery lifetime.

Key featuresQQ I2C interface

QQ Memory

1.8 to 5.5 V wide operating
voltage
QQ 400 kHz across the entire voltage
range
QQ 13.56 MHz RF interface
QQ ISO 15693 industry standard:passive RF technology – nopower needed to operate in RF
QQ NFC compatible

User memory: 4-Kbit, 16-Kbit or
64-Kbit EEPROM
QQ Reliability: 40-year data retention
and 1 million erase-write cycles
QQ Data protection: unique andflexible 32-bit password
protection scheme
QQ Energy harvesting
QQ V
pin providing the energy
OUT
harvested from the RFID reader

QQ

QQ

STAC3932B/F, STAC4932B/F
100 V RF power MOSFETs in STAC® package for 1.5T and 3T MRI
A new generation of 100 V RF power MOSFETs housed in STAC® air-cavity packages and capable of delivering an output
power up to 1.2 kW for industrial, scientific and medical applications such as 1.5T and 3T magnetic resonance imaging.
The new air-cavity technology enables lower thermal resistance, lower weight and reduced cost compared to devices inceramic packages.

Key features
QQ Frequency: 61.5 MHz (1.5T MRI),

123 MHz (3T MRI)QQ Supply voltage: 100 V
QQ Output power: Up to 1.2 kW
QQ Gain: > 23 dB
QQ Efficiency: > 60%
QQ 25% lower thermal resistance(RTHJ-C)

QQ 4 times higher MTTF
QQ Cost-effective solution versus

ceramic packages
QQ Available in two mounting

configurations:
QQ Bolt-down
QQ Surface mount with AgSnCu
back solder finishing8EMI filtering and signal conditioning
Integrated EMI filtering and ESD protection:
QQ EMIF1: Strong attenuation of 900 MHz and higher frequencies for different sockets including keypads and touch pads,

memory cards, audio lines
QQ ECMF1: High-performance common-mode noise filtering with integrated ESD protection for high-speed serial interfaces fordisplay and camera/imaging systems with serial interfaces, High Speed USB 2.0
IPD for RF front-end: integrated
passive device (IPD) solutions basedon glass substrate can offer a low
parasitic and high-Q solution suitablefor RF applications including:
QQ Matched balun for 2.4 GHz

applications such as Bluetooth or
WLAN (using 50/50, 50/100 or
custom matching)
QQ Diplexers for applications sharing
the same antenna for 2.4 and 5
GHz WLANQQ Band-pass filter for 5 GHz WLAN

ESD/EOS protection devices
Protection devices come in 2 families:
QQ Transient voltage suppressors (TVS or Transil™)
QQ Crowbar diodes (Trisil™)
These devices protect circuits against:
QQ Electrostatic discharge (ESD) generated by contact with a person or a machine (IEC 61000-4-2)
QQ Electrical overstress (EOS) generated by lightning strikes or AED generated overvoltages (IEC 61000-4-5)

Key features
Can withstandhigh power surges

Transparent innormal circuit
conditions, even in
high-speed
data interfaces

Easy to design
whatever circuit
constraints

Robustness

Giga transparency

Design integration

QQ Wide portfolio

TVS from 100 W to 5000 W
QQ ESD array – including low
capacitive arrays
QQ Crowbar diodes
QQ Crowbar diode arrays
QQ Wide range of applications
QQ Airway clearance
QQ Glucometers
QQ Blood pressure
QQ Monitoring stations
QQ

Protection devices

Note: 1. For the complete part number list, refer to the EMI filtering and signal conditioning product table at the end of the brochure9

STM8LSTM32LSTM32F
SPEAR3x0

Microcontrollers
Ultra-low-power 8-bit MCUs, 1.65 to 3.6 V, up to 6 MIPS, 2 to 64 Kbytes
Ultra-low-power 32-bit MCUs, 1.65 to 3.6 V, up to 33 DMIPS, 32 to 384 Kbytes
32-bit MCUs, 1.7 to 3.6 V, up to 68 DMIPS, 16 Kbytes to 1 Mbyte
32-bit MPU based on ARM926EJ-S™ core with up to 400 DMIPS

M24LR16E-R
M24LR64-R

Dual Interface EEPROM
16-Kbit Dual Interface EEPROM with password protection, energy harvesting and RF status functions
64-Kbit Dual Interface EEPROM with password protection

LIS331DLx
LIS3DH
LIS344ALH
L3G4200D
LSM303DLHx
L3GD20
LSM330DL
MP45DT02
MP34DB01
LPS001WP
LPS331AP
STMT04/5/7
STMPE812A
STMT14x
STTS751
STLM20MEMS and sensors
Digital-output motion sensors, low-power and high-performance 3-axis accelerometer
MEMS digital-output motion sensor, ultra-low-power, high-performance 3-axis nano accelerometer
MEMS inertial sensor, high-performance 3-axis ±2g/±6g ultra-compact linear accelerometer
Digital-output, low-power and high-stability 3-axis gyroscope
Sensor modules, 3-axis accelerometer and 3-axis magnetometer
3-axis digital gyroscope
Inertial module (3 accelerometers, 3 gyroscopes)
Omnidirectional digital MEMS microphone, 58 dB signal-to-noise ratio and -26 dB sensitivity
Omnidirectional digital MEMS microphone, 62 dB signal-to-noise ratio and -26 dB
MEMS pressure sensor, 300 to 1100 mbar absolute digital output barometer
MEMS pressure sensor, 260 to 1260 mbar absolute digital output barometer
S-Touch® - FingerTip, multi-touch capacitive touchscreen controllers from 4 to 7 inch
S-Touch® - FingerTip, multi-touch capacitive touchscreen controllers from 4 to 7 inch
STMTouch - Proximity or single touch key touch controllers
2.25 V low-voltage local digital temperature sensor
Ultra-low current, 2.4 V precision analog temperature sensor

STHV748

Pulser ICs
5-level, ± 90 V, 2 A high-speed pulser with four independent channels and integrated Tx/Rx switch

EMIF01-1003M3
EMIF04/06/08-1005Mx
EMIF02-SPK02F2
EMIF06-mSD03F3
ECMF06-6AM16
ECMF02-2BF3
ECMF04-4CMX8
EMIF08-LCD04M16
BAL2690D3U
DIP2450-01D3
BPF50-01D3

EMI filtering and signal conditioning
1-line EMI filter with ESD protection for keypads
4/6/8-line EMI filters with ESD protection
2-line EMI filter and ESD protection
6-line EMI filter and ESD protection
6-line common-mode filter with ESD protection
2-line common-mode filter with ESD protection
2-line CMF including ID and VBUS ESD protection
8-line LC filter and ESD protection
2.4 GHz matched balun for STLC2690
Diplexer for 2.4 and 5 GHz
Band-pass filter for 5 GHz WLANSPZB32W1xx
SPBT2532C2
ST802RT1
STM32W

Connectivity ICs
IEEE 802.15.4 modules
Bluetooth module
10/100 real-time Ethernet 3.3 V transceiver
STM32 with embedded 2.4 GHz IEEE 802.15.4 radio, low-cost wireless network implementation

HM301
HM201
HM101

ECG unit
3-channel integrated diagnostic quality ECG analog front end
2-channel integrated diagnostic quality ECG analog front end
1-channel integrated diagnostic quality ECG analog front end

10

TSV85xLMV82x
TS33x
LMV3xTS302xTS3011
TSV6xAmplifiers and comparators
Micropower op-amps, 180 µA/1.3 MHz with shutdownStandard low-power op-amps, 400 µA/5.5 MHz with shutdown
Micropower low-voltage rail-to-rail comparators
Low-cost, low-power rail-to-rail input/output op-amps
Rail-to-rail 1.8 V high-speed micropower comparators
Rail-to-rail high-speed comparator
Rail-to-rail input/output CMOS op-amps

STLA02
STLD41
STPxCMPSTLD20D/40D
L6924DL6924U
STw4102
STC3100
L6920DB
L6920D
ST8R00
L6928
STLQ50
STLQ015
ST715
LD39115J
LD59015
LDLN015
LDCL015LM4041
STBB2J
ST1S15J
STBB1VIPERxx

Power management
White LED driver/backlighting
White LED driver/backlighting
Driver/backlighting
White LED driver/backlighting
Lithium battery charger
USB compatible lithium battery charger
Dual input Li-ion battery charger with gas gauge
Battery monitor for gas gauge applications
0.8 A step-up, low IQ, down to 0.6 VIN
1 A step-up, low IQ, down to 0.6 VIN
1 A step-up, DFN8 (4 x 4 mm) package
Sync step-down converter, 95 % 2 to 5.5 VIN
50 mA, 3 μA supply current, low drop linear regulator
150 mA, 1.7 μA supply current, low drop linear regulator
85 mA, very low quiescent current LDO regulator
150 mA, miniature high-performance LDO regulator
150 mA, very high PSRR, low-noise LDO regulator
150 mA ultra-low noise LDO
150 mA capless LDO
0.1% low consumption shunt voltage reference
800 mA, high-efficiency buck-boost converter in CSP package
500 mA, high-efficiency buck converter in CSP package
Dual-mode, 1 A IOUT buck-boost voltage regulator
VIPerPlus family of high-performance offline high-voltage converters

L639x
L62xx
L6470
L6460
L6474

ASSP for motor control
MOSFET IGBT smartDRIVE gate drivers integrating advanced current sensing, comparator and operational amplifier
powerSPIN – monolithic motor-driver platform for DC, BLDC and stepper motors
dSPIN – monolithic digital microstepping motor driver for stepper motors
flexSPIN – monolithic multi-motor driver with microstepping for stepper and DC motors
Monolithic microstepping driver with SPI and diagnostics

DSILC6-4xx
ESDA14V2BP6
ESDALC5-1BM2
ESDAVLC8-1BM2
SMM4F
ESDALCL - xxx
USBULC6
ESDA-1K
HSP061-4NY8
SLVU2.8

Protection devices
Ethernet, LVDS, USB 2.0 15 kV ESD protection
8 V and 12 V keyboard/button/audio ESD protection
1-line bidirectional ESD protection, 8 pF
1-line bidirectional ESD protection, 4 pF
2.5 kW, flat package, ESD overvoltage reverse polarity protection Transil™
ESD array, low leakage (1 nA), low capacitance (1.5 pF), 1 to 4 lines
USB 2.0 high-speed 15 kV ESD protection
450 W EOS protection in SOD-523 package
High-speed protection, 2 x 1 mm flow-through package
Gigabit Ethernet protection

11

STUSB02E/03E
STOTG04
STMPE1801
STMPE2403

Interface ICs
USB transceivers
USB On-The-Go
18-bit enhanced port expander with keypad controller
24-bit enhanced port expander with keypad and PWM controller

STL120N2VH5
ST14N3LLH5D1
STS10DN3LH5
STL65DN3LLH5
STL15DN4F5
STD30NF60LT4
STB9NK60ZT4
STY139N65M5
ST1NK80D2
ST1N105K3D2
STGW45HF60WD
STGW30N120KD
STGW30NC120HD
SD293x/393x
STAC3932B/F
STAC4932B/F

Power transistors
20 V, n-channel, super logic level, power MOSFET in PowerFLAT 5x6
30 V, n-channel, logic level power MOSFET in die form
30 V, dual n-channel, logic level power MOSFET in SO-8
30 V, dual n-channel, logic level power MOSFET in PowerFLAT 5x6
40 V, dual n-channel power MOSFET in PowerFLAT 5x6
60 V, n-channel logic level power MOSFET in DPAK
600 V, n-channel power MOSFET in D2PAK650 V, n-channel power MOSFET in Max247
800 V, n-channel power MOSFET in die form
1050 V, n-channel power MOSFET in die form
45 A, 600 V, n-channel advanced planar PT IGBT in TO-247
N-channel 30 A, 1200 V short circuit rugged IGBT with ultrafast diodeN-channel 30 A, 1200 V IGBT with ultra-fast diodeN-channel RF power MOSFETs
1 kW, 100 V RF power MOSFET in STAC® package for 1.5T and 3T MRI
STAC® package for 1.5T and 3T MRI

M41T62LC6F
M41T6X
M41T83/93
M41ST85
M41ST87
M48Txx

Clocks and timing circuits
World's smallest RTC with embedded crystal in LCC8 3.2 x 1.5 mm package
Low-power I2C RTC with alarm, 32 kHz output or programmable watchdog functions, 1.3 to 4.4 V operation
I2C/SPI RTC with analog calibration, alarm, watchdog, 32 kHz and reset functions
3.0/3.3 V I²C combination serial RTC, NVRAM supervisor and microprocessor supervisor
I2C RTC and NVRAM supervisor with anti-tamper detection function
Non-volatile SRAM, 3 to 5.5 V with alarm, watchdog timer

ST1G3236
ST2329B
ST2129B
ST2149B
STG719Level translators and analog switches
1-bit level shifter general purpose, 1.2 to 3.6 V, DFN6 1.0 x 1.2 mm
2-bit level shifter for I²C, 1.65 to 5.5 V, QFN8 1.2 x 1.4 mm
2-bit general-purpose level shifter, 1.65 to 5.5 V, QFN8 1.2 x 1.4 mm
4-bit level shifter general purpose, 1.65 to 5.5 V, QFN12 2.0 x 1.7 mm
Ultra-low leakage current (0.35 nA max at 85 °C) SPDT switch

M24128-BFCS6TP/A
M24256-BRCS6TP/A
M95256-RCS6TP/A
M24M01-RAW21/90
M24M02-DR

128-Kbit I2C in WLCSP form
256-Kbit I2C in WLCSP form
256-Kbit SPI in WLCSP form
1-Mbit I2C in wafer form
2-Mbit serial I2C bus EEPROM

EEPROM

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