Activity Report2015
TABLE OF CONTENTS
Preface

Shik Shin

1. Status of Beamline BL07LSU at the SPring-8
2. Status of spin- and angle-resolved photoelectron spectroscopy with laser light at LASOR
3.

Workshops & Meetings

4.

Seminar

5.

Activities

Synchrotron Radiation Experiments (Spring-8)1) STUDY OF L-EDGE RESONANT MAGNETO-OPTIC KERR EFFECT OF A
BURIED FE NANOFILM
Y. Kubota,M. Taguchi,Sh. Yamamoto,T. Someya,Y. Hirata, K. Takubo,M. Araki,
M. Fujisawa, H. Narita, K. Yamamoto, Y. Yokoyama, S. Yamamoto, H. Wadati, S. Shin,and I. Matsuda

2) OPERANDO spectroNanoscopy of energy efficient devices, power generation
devices and energy storage devices using 3D-Nano-ESCA and its prospects
M. Oshima, and N. Nagamura
3) OPERANDO SPECTROMICROSCOPY FOR 2D-ELECTRON TRANSISTORSFOR ENERGY-SAVING ICT
H. Fukidome
4) High-energy-resolution soft x-ray emission study of LiCoO2
T. Sudayama, D. Asakura, E. Hosono, J. Miyawaki, H. Kiuchi, H. Niwa, and Y. Harada
5) CHARGE EXCITATIONS IN HIGH-TC CUPRATES STUDIED BY RESONANT
INELASTIC X-RAY SCATTERING AT THE OXYGEN K-EDGE

K. Ishii, K. Sato, M. Fujita, J. Miyawaki, H. Niwa, and Y. Harada
6) VALENCE FLUCTUATION IN QUANTUM CRITICAL Yb(Al,Fe)B4 STUDIEDUSING SOFT X-RAY TIME RESOLVED PHOTOEMISSION SPECTROSCOPY. II
M. Okawa, K. Akikubo, S. Yamamoto, I. Matsuda, S. Shin, S. Suzuki, S. Nakatsuji, and T.
Saitoh7) DEVELOPMENT OF PICOSECOND TIME-RESOLVED PHOTOELECTRONHOLOGRAPHY
K. Hayashi, I. Matsuda, H. Wadati, S. Yamamoto, T. Muro, T. Matsushita, and Y. Tanaka8) EFFECT OF OXYGEN VACANCIES ON THE PHOTOEXCITED CARRIER
LIFETIME ON TITANIUM DIOXIDE SURFACES
K. Ozawa, S. Yamamoto, R.-Y. Liu, K. Inoue, Ta. Higuchi, H. Sakama, K. Mase, and I.
Matsuda9) ANALYSIS OF STRUCTURES AND ELECTRONIC STATES OF [ACTIVE-SITE]
IN FUNCTIONAL MATERIALS BY MICROSCOPIC HIGH-RESOLUTION TWODIMENSIONAL PHOTOELECTRON SPECTROSCOPY
H. Daimon, Y. Hashimoto, M. Lee, S. Fukami, D. Tsujikawa, T. Yoshida, H. Matsuda, and M.
Taguchi10) RIXS of α-Fe2O3 in magnetic field
J. Miyawaki, S. Suga, H. Fujiwara, H. Niwa, H. Kiuchi and Y. Harada
11) CO2 ADSORPTION ON THE OXYGEN-MODIFIED EPITAXIAL GRAPHENE
SURFACE AT NEAR AMBIENT CONDITIONS
S. Yamamoto, K. Takeuchi, R.-Y. Liu, Y. Shiozawa, T. Koitaya, T. Someya, K. Tashima, H.
Fukidome, K. Mukai, S. Yoshimoto, M. Suemitsu, J. Yoshinobu, and I. Matsuda12) ACTIVATION OF CARBON DIOXIDE ON Zn-DEPOSITED Cu SURFACESSTUDIED BY AMBIENT-PRESSURE X-RAY PHOTOELECTRON
SPECTROSCOPY
Y. Shiozawa, T. Koitaya, S. Yamamoto, K. Takeuchi, R.-Y. Liu, K. Mukai, S. Yoshimoto, Y.
Yoshikura, I. Matsuda, and J. Yoshinobu
13) REVEALING ROOM-TEMPERATURE FERROMAGNETISM OF ZnSnAs2: Mn
THIN FILMS BY ATOMIC AND MAGNETIC STRUCTURE ANALYSIS BASED ON
PHOTOELECTRON HOLOGRAPHY AND SITE-SELECTIVE XPSMEASUREMENTS

N. Uchitomi, M. Ogo, Y. Hashimoto, M. Lee, S. Fukami, D. Tsujikawa, T. Yoshida, H.
Matsuda, M. Taguchi, and H. Daimon
14) Co 2p-3d-2p RESONANT X-RAY EMISSION SPECTRUM OF LaCoO3 BELOWROOM TEMPERATURE
Y. Taguchi, K. Kashiwagi M. Hamada, S. Kawamata, T. Uozumi, K. Mimura, A. Hariki J.
Miyawaki, and Y. Harada
15) Improvement of operando cell of LiCoO2 cathode for the Co 2p soft x-ray emission
spectroscopy
D. Asakura, E. Hosono, H. Niwa, H. Kiuchi, J. Miyawaki, and Y. Harada16) Magnetic Circular Dichroism in RIXS of weak ferromagnet α-Fe2O3
J. Miyawaki, S. Suga, H. Fujiwara, H. Niwa, H. Kiuchi and Y. Harada17) ANALYSIS OF DOPANT-SITE IN BORON DOPED DIAMOND BY USINGPHOTOELECTRON HOLOGRAPHY
Y. Kato18) Monitoring the ferroelectric instability of BaTiO3 by RIXS
F. Sara, M. Simon, and G. Marco19)DEVELOPMENT OF AMBIENT PRESSURE ANGLE RESOLVED ULTRA-HIGH
RESOLUTION RIXS SYSTEM
Y. Harada, J. Miyawaki, H. Niwa, H. Kiuchi, K. Yamazoe, T. Inoue, and Y. Cui
Experiments at E-labo
1) Low energy property of one-dimensional metallic surface states of Pt-induced atomic
nanowires on Ge(001)
K. Yaji, and F. Komori
2) SPIN-POLARIZED SURFACE ELECTRONS IN THE NOVEL SUPERCONDUCTORSr2RuO4 REVEALED BY LASER SPIN- AND ANGLE-RESOLVED PHOTOEMISSION
SPECTROSCOPY

K. Kuroda, S. Akebi, M. Nakayama, K. Yaji, H. Taniguchi, Y. Maeno, S. Nakatsuji, and T.
Kondo
3) LASER SPIN-AND ANGLE-RESOLVED PHOTOEMISSION STUDY ON SPIN-ORBITALENTANGLED SURFACE STATES OF TOPOLOGICAL INSULATORS

K. Kuroda, K. Yaji, A. Harasawa, M. Nakayama, F. Komori, and T. Kondo
4) TESTING THE SURFACE PHOTOELECTRIC EFFECT
Y. Ishida, K. Yaji, and S. Shin5) SPIN POLARIZATION OF 1D SURFACE STATE ON BI/INSB(001)

J. Kishi, Y. Ohtsubo, A. Harasawa, K. Yaji, F. Komori, S. Shin, and S. Kimura

Staff
Publications List

Preface
The Synchrotron Radiation Laboratory (SRL) in Institute for Solid State Physics (ISSP)
has been taking part in the Synchrotron Radiation Research Organization (SRRO) of the
University of Tokyo since 2005 and operating a new beamline (BL07LSU) at the SPring-8
and experimental apparatuses in soft X-ray region. The beamline has a 27m-longpolarization-controlled undulator and a monochromator covering the photon energy range
from 250 eV to 2 keV, which was fully opened to users since 2009. The members of solidstate spectroscopy group of SRL play an essential role to promote advanced materials
sciences utilizing high brilliance SR from the new undulator. In FY 2010, they havesucceeded to measure time-resolved photoelectron spectroscopy of the surface photovoltage in Si surface with the time-resolution of 30 ps by utilizing the time-structure ofsynchrotron radiation and an ultra-fast laser. In FYs 2011 and 2012, energy resolution ofsoft X-ray emission spectroscopy becomes 10,000 and the spatial resolution of the scanningphotoelectron microscope (3D nano-ESCA) is better than 70 nm. In 2014, they succeeded
to operate the undulator to use the circular and parallel polarization light. The first aims of
BL07LSU have been achieved already. The SRL-ISSP and SRRO contribute the cuttingedge basic sciences and the applied sciences using synchrotron radiation .

June 2016

Shik Shin
Director of SRL-ISSP

1. Status of Beamline BL07LSU at SPring-8
The University-of-Tokyo high-brilliance synchrotron soft X-ray outstation beamline
BL07LSU at SPring-8 has been maintained by the permanent staff members withadjuncts for user operations. A scientific aim of the beamline is to promote advanced
spectroscopy for solid state and soft materials. There are currently three regular
endstations: time-resolved soft X-ray spectroscopy (TR-SX spectroscopy), 3D-scanningphotoelectron microscope (3D nano-ESCA) and ultrahigh resolution soft X-ray
emission spectroscopy (HORNET), along with a free port station for users who bring
their own experimental apparatus.
The beamline BL07LSU is equipped with a segmented cross-type undulator. In 2015,
tuning of the light source was made to realize the fast polarization switching. After themachine studies in the SPring-8 storage ring, phases between electromagnetic waves,generated at the undulator segments, can be continuously controlled between +/2 and –/2 at 10Hz. As a consequence, the soft X-ray beam, irradiated on a sample at theend-station, can be changed between left and right circular polarizations via linear
polarization at this frequency. Development of the fast polarization switching was
eventually achieved.
At the beamline endstations, various scientific researches were carried out by both thelaboratory staff and general users (G-type application). Below are brief introduction ofrecent activities at each station.
(1) Time-Resolved soft X-ray spectroscopy station (TR-SX spectroscopy)
The station is to perform time-resolved photoemission spectroscopy experiments bysynchronizing the high-brilliant soft x-ray and the ultra-short laser pulses. A new typeof the electron spectrometer, the two-dimensional angle-resolved time-of-flight(ARTOF) analyzer, has been used for the efficient time-resolved measurements and a
low temperature manipulator (15 K) is installed for extensive experiments for users.
Users have performed time-resolved photoemission measurements especially on optical
functional materials, such as for solar cells and for photocatalysts. A time-resolved
measurement of photoelectron diffraction was also attempted in 2015. Whileunderstanding of carrier dynamics have been one of the challenging issues in condensed
matter physics, a series of the time-resolved data, accumulated by users, has captured
the universal trends and the theoretical models have also been developing at the station.

(2) 3D-scanning photoelectron microscope (3D nano-ESCA)
We have developed soft X-ray scanning photoelectron emission microscopy (SPEM)
with an angle-resolved electron analyzer (3D-nano-ESCA). Taking the success ofoperando nano-spectroscopy on organic FETs using semiconductor parameter analyzer
in 2014, we have investigated pin-point electronic structure of photocatalysts for water
splitting. Prof. K. Domen’s group succeeded in developing novel water splitting
photocatalysts La2Ti5CuS5O7 (LTC) and La2Ti5AgS5O7 (LTA) as a p-typesemiconductor electrode with Sc and Ga doping [ref]. We have analyzed eachphotocatalyst with the size ranging from 350 nm to 1000 nm in diameter and several μm
in length by 3D-nano-ESCA. It is revealed that shift of valence band spectra and corelevels towards lower binding energy, suggesting successful hole doping probably into
Cu 3d and Ag 4d bands by substituting Ti sites by Sc and Ga ions. [ref]We have also attempted to analyze local electronic structure of cathode materials for Li
ion batteries, that is LiNi1.5Mn0.5O4 after charging and discharging, and found atendency that Mn 2p core level spectra show slightly more reduced features at the edgeof grain than at the plane after charging, while Ni 2p spectra show almost no difference.
Thus, operando nano-spectroscopy can provide us with useful information forimproving performances of green nano-devices. However, there still remain several
issues to be overcome for “more powerful” nano-spectroscopy. The most important
issue is spatial resolution improvement. For nano-spectroscopy for practicalnano-devices, 10 nm spatial resolution is required. The second issue is photon flux
hopefully greater than 1010 ph/s. The third issue is ambient pressure nano-spectroscopy
at several Torr. The fourth issue should be nanoARPES.
(3) Ultra high-resolution soft X-ray emission spectroscopy (HORNET)
The station is for soft X-ray emission spectroscopy measurements with ultra
high-resolution (E/E > 104) and under various environmental conditions (gas, liquidand solid). In 2015, three major upgrades of the station has almost been accomplished,i.e. differential pumping system for windowless atmospheric pressure experiments (upto ~0.5 atm achieved), spectrometer rotation system for angle resolved RIXS
experiments( ± 45 deg. tuned), and installation of ultra-precise low slope-error
post-focusing mirror to realize 1m-level focusing of soft X-rays (total resolving power
E/Espectrometer ~ 10000 achieved for ambient pressure and angle resolved mode).
Commissioning exams of the angle resolved RIXS will be implemented in the first halfof 2016 cycle and will be open to users in the second half.

The number of applications to the HORNET station is rapidly increasing. In 2015, wehave accepted eight user experiments. Five among them are strongly correlatedmaterials and the other three are battery electrode and electrolyte chemistry. We haveshared our S-type long-term beamtime to trial experiments of possible users while
upgrading our RIXS system for future applications.
(4) Free-port station
The station is equipped with a focusing mirror chamber, and users can connect theirown experimental chambers. In 2015, the following four experiments were performed at
this station: resonant soft x-ray scattering, resonant magneto-optical Kerr effects,
ambient-pressure x-ray photoemission spectroscopy, and two-dimensional
photoemission spectroscopy with a display-type ellipsoidal mesh analyzer.
Time-resolved measurement of soft x-ray absorption spectroscopy can be made byusing laser beams from the time-resolved soft x-ray spectroscopy station.
References:[1] H. Kiuchi, T. Kondo, M. Sakurai, D. Guo, J. Nakamura, H. Niwa, J. Miyawaki, M. Kawai, M.
Oshima, Y. Harada, Phys. Chem. Chem. Phys, 18, 458-465, 2016.
[2] S. Moser, S. Fatale, P. Krüger, H. Berger, P. Bugnon, A. Magrez, H. Niwa, J. Miyawaki, Y.
Harada, and M. Grioni, Phys. Rev. Lett., 115, 9646, 2015.
[3] Sh. Yamamoto, M. Taguchi, T. Someya, Y. Kubota, S. Ito, H. Wadati, M. Fujisawa, F.
Capotondi, E. Pedersoli, M. Manfredda, F. Casolari, Maya Kiskinova, J. Fujii, P. Moras, T.
Nakamura, T. Kato, T. Higashide, S. Iwata, S. Yamamoto, S. Shin, and I. Matsuda, Rev. Sci.
Instrum., 86, 83901, 2015.
[4] Yi-Sheng Liu, Per-Anders Glans, Cheng-Hao Chuang, Mukes Kapilashramic, Jinghua Guo,
Journal of Electron Spectroscopy and Related Phenomena, 200, 282-292, 2015.
[5] R. Yukawa, K. Ozawa, S. Yamamoto, R.-Y. Liu, and I. Matsuda, Surf. Sci., 641, 224-230, 2015.
[6] N. Nagamura, Y. Kitada, J. Tsurumi, H. Matsui, K. Horiba, I. Honma, J. Takeya and M. Oshima,Appl. Phys. Lett., 106, 251604, 2015.
[7] 吹留 博一, 表面科学, 36 (6), 303-308, 2015.
[8] K. Kurita, D. Sekiba, I. Harayama, K. Chito, Y. Harada, H. Kiuchi, M. Oshima, S. Takagi, M.
Matsuo, R. Sato, K. Aoki, S. Orimo, J. Phys. Soc. Jpn., 84, 043201, 2015.
[9] T. Tsuyama, T. Matsuda, S. Chakraverty, J. Okamoto, E. Ikenaga, A. Tanaka, T. Mizokawa, H.
Y. Hwang, Y. Tokura, and H. Wadati, Phys. Rev. B, 91, 115101, 2015.
[10] J. Sellberg, T. McQueen, H. Laksmono, S. Schreck, M Beye, D. DePonte, B. O'Kennedy, D.
Nordlund, R. Sierra, D. Schlesinger, T. Tokushima, S. Eckert, V. Segtnan, H. Ogasawara, K.

Kubicek, S. Techert, U. Bergmann, G. Dakovski, W. Schlotter, Y. Harada, I. Zhovtobriukh, M.
Bogan, P. Wernet, A. Föhlisch, L. Pettersson and A. Nilsson, J. Chem. Phys., 142, 044505, 2015.
[11] M.M. van Schooneveld and S. DeBeer, J. Electron Spectrosc. Relat. Phenom., 198, 31, 2015.
[12] D. Asakura, E. Hosono, H. Niwa, H. Kiuchi, J. Miyawaki, Y. Nanba, M. Okubo, H. Matsuda,
H.S. Zhou, M. Oshima, and Y. Harada, Electrochem. Commun., 50, 93, 2015.

2. Status of spin- and angle-resolved photoelectron spectroscopy
with laser light at Laser and Synchrotron Research Laboratory
Spin- and angle-resolved photoelectron spectroscopy (SARPES) is a powerful technique toinvestigate the spin-dependent electronic states in solids. We developed a SARPES apparatus with avacuum-ultraviolet laser at Laser and Synchrotron Research Laboratory in the Institute for Solid State
Physics, named LOBSTER (Laser-Optics-Based Spin-vecTor Experimental Research) machine. The
LOBSTER machine is utilized to obtain precise information on spin-dependent electronic structuresnear the Fermi level in solids. We started a project to construct the LOBSTER machine from FY 2014
and joint researches at this station have started from FY 2015.
Figure 1 represents an overview of the LOBSTER machine. The apparatus consists of an analysis
chamber, a sample-bank chamber connected to a load-lock chamber, and a molecular beam epitaxy(MBE) chamber, which are kept in an ultra-high vacuum (UHV) environment and are connected witheach other via UHV gate valves. The hemispherical electron analyzer is a custom-madeScientaOmicron DA30-L, modified to attach the very-low-energy-electron-diffraction type spin
detectors. The electrons are excited by 6.994-eV
photons, yielded by 6th harmonic of a Nd:YVO4
quasi-continuous wave laser with repetition rate of
120 MHz. A helium discharge lamp (VG Scienta,
VUV5000) is also available as a photon source. At
the MBE chamber, samples can be heated by adirect current heating or electron bombardment.
The surface evaluating and preparing instruments,
such

as

evaporators,

lowenergyelectrondiffraction,reflectionhighenergyelectrondiffraction, sputter-gun and quartz microbalance,

Fig. 1. Overview of the LOBSTER machine at
LASOR [1].

can be installed. At the carousel chamber, 16
samples can be stocked in the UHV environment.
Figure 2 shows a Fermi edge taken from a gold(Au) thick film recorded with the SARPES mode.
The sample temperature was set to 9 K. The
spectrum was taken with the analyzer pass energyof 2 eV. The sizes of an entrance slit and an exit
aperture are set to 0.2 mm and 0.2 × 0.5 mm2,

Fig. 2 The Fermi edge taken from a Au thick film
recorded in SARPES mode [1].

respectively. The spectrum was fitted with the Fermi
distribution function. From the fitting, the energy
resolution was estimated to be 1.7 meV for the
SARPES mode.
We performed laser-ARPES and laser-SARPES
measurements of the Bi(111) surface. Figure 3(a)shows a Fermi-surface mapping recorded with the
ARPES mode. The energy and angular resolutions of
the instrument were set to 1.5 meV and 0.1°,
respectively. The acquisition time for the Fermi surface
image is 3 min. We found a hexagonal Fermi surface
around  and a part of six Fermi surfaces elongated in_the M direction, which originate from surface states.
Figure 3(b) shows spin-resolved photoelectron spectra
taken at a selected angle shown in Fig. 3(a). The spin
detector is arranged to be sensitive to the spinpolarization of Py on the sample axis, whichcorresponds to the spin polarization direction expectedby the ordinary Rashba effect. In the SARPES
measurements, the energy and angular resolutions were
set to 7 meV and 0.7°, respectively. The acquisition
time of a pair of spectra is 15 min. We clearly observed
the spin polarization of the surface states arising fromthe Rashba effect. From this demonstration, it is clearthat the new spectrometer can provide high-resolution
spin-resolved spectra in a very short time. The
error-bars of the spin polarization are as small as 3 %,indicating the high accuracy of the new spectrometer.

Fig. 3 (a) Constant energy ARPES intensity
map at the Fermi level of the Bi(111) surface.
(b) SARPES spectra measured at a selected kpoint shown by a circle in (a). The upper panel
represents raw spectra. Calculated spinpolarization is exhibited in the middle panel.
The bottom panel represents the spin-resolved
spectra [2].

References[1] K. Yaji, A. Harasawa, K. Kuroda, S. Toyohisa, M. Nakayama, Y. Ishida, A. Fukushima, S. Watanabe, C.-T.
Chen, F. Komori and S. Shin, Rev. Sci. Instrum. 87, 053111 (2016).
[2] K. Yaji, Hyomenkagaku 37, 19 (2016).

3. Workshops & Meetings
A report of the commemorative lecture meeting, celebrating 10th anniversary of Synchrotron
Radiation Research Organization in the University of Tokyo
Iwao Matsuda
Synchrotron Radiation Research Organization, the University of Tokyo
Institute for Solid State Physics, the University of Tokyo

A commemorative lecture meeting was held at Koshiba-hall (Hongo campus, the University ofTokoyo) on November 13, 2015, to celebrate 10th anniversary of Synchrotron Radiation Research
Organization in the University of Tokyo. Participants of 123 people (including 78 from the
University of Tokyo) were gathered and the meeting was great success. The program was organizedwith the anniversary event and the commemorative lectures.

In the anniversary event, addresses were given by Prof. Yoshiyuki Amemiya (Director of
Synchrotron Radiation Research Organization, the University of Tokyo), Prof. Hitoshi Takigawa(Director of Institute of Solid State Physics, the University of Tokyo), and Prof. Tetsu Akiyama(Director of Institute of Molecular and Cellular Biosciences, the University of Tokyo). Then,
greeting words were honorably presented by Prof. Kazuo Hotate (Vice-president of the University ofTokyo) and Dr. Yoshiharu Doi (President of Japan Synchrotron Radiation Research Institute).

Three commemorative lectures were delivered by three outstanding researchers, Dr. Anders
Nilsson (Professor of SLAC, Stanford University, Stockholm University), Dr. Yoshiki Higuchi(Professor of University of Hyogo) and Dr. Tetsuya Ishikawa (President of RIKEN SPring-8 Center).
Then, recent research activities in Synchrotron Radiation Research Organization were described by
the two division leaders, Prof. Shik Shin and Prof. Chikashi Toyoshima.

At the end, closing address was given by Prof. Masaharu Oshima (Former Director of
Synchrotron Radiation Research Organization, the University of Tokyo).

Figure 1 The commemorative photo(at the front from left) Prof. Anders Nilsson, Prof. Yoshiki Higuchi、Dr. Tetsuya Ishikawa, Dr.
Yoshiharu Doi, Vice-President Kazuo Hotate, Vice-President Ken Furuya, Prof. Hitoshi Takigawa,and Prof. Tetsu Akiyama.
(at the rear from left) Prof. Shik Shin, Prof. Yoshiyuki Amemiya, Prof. Masaharu
Prof. Chikashi Toyoshima

Figure 2 A photo of the guests, the lecturers, and the participants

Oshima, andThe 29th Annual Meeting/Joint Symposiumof the Japanese Society of Synchrotron Radiation Research
Iwao Matsuda, Shik ShinThe Institute for Solid State Physics, the University of Tokyo, Japan
Synchrotron Radiation Research Organization, the University of Tokyo, JapanThe 29th Annual meeting/joint symposium of the Japanese Society for Synchrotron Radiation
Research was held at Kashiwa campus in the University of Tokyo from January 9 to 11 in 2016. The
synchrotron radiation laboratory contributed as the main members of the executive committee. Prof.
Shik Shin and Prof. Iwao Matsuda served as the chairman and the vice-chairman, respectively. The
meeting/symposium was held as cooperative works with the program committee (Chairman: Prof.
Atsushi Fujimori, Vice-chairman: Takahisa Arima) and the organizing committee (Chairman: Dr.
Yuya Shinohara). During the period, there were 703 participants, 343 presentations (oral and poster),and 59 company exhibitions. At the banquet, there are 372 attendants, including 49 students. The
participants enjoyed the meeting/symposium and learned much from the excellent presentations anddiscussion. The details were reported as an article in the domestic journal published by the JapaneseSociety for Synchrotron Radiation Research (放射光 29 (2), 90 (2016)).

Fig.2 Oral presentation

Fig.1 Entrance of the hall and posters

Fig.3 Poster session

Fig.4 The honor lecture by Prof. M. Oshima

Fig.7 Address by President Makoto Gonokami
of the University of Tokyo at the banquet.

Fig.5 The honor lecture by Prof. T. Irifune

Fig.8 The banquet

Fig.6 The poster

ISSP workshop “ Status of SPring-8 BL07LSU-Integration of x-ray spectroscopy and diffraction-”
Date: 2016/3/1(Tue)Place: Lecture Room (A632), 6th Floor, ISSP, the University of Tokyo

Synchrotron radiation laboratory has a Harima branch to maintain and develop a high-brilliance soft
X-ray beamline BL07LSU at SPring-8. There we are performing time-resolved, spatial-resolved andenergy-resolved soft X-ray spectroscopy to study electronic states and their dynamics of new materials.
In this workshop, recent research activities at our beamline were reported and we discussed our new
experimental techniques which integrate x-ray spectroscopy and diffraction. The speakers talked about
their recent results from each end station (time-resolved spectroscopy, 3D nano-ESCA, emission
spectroscopy, and so on). There were two invited talks; one is about synthesizing novel
superconductors and the advantage of using synchrotron x-rays for finding new materials, and the otheris about coherent x-ray scattering using synchrotron x-rays and x-ray free electron lasers.
There were a lot of discussions for each talk, and we successfully started to obtain a clear vision about
our future experimental techniques combining x-ray spectroscopy and diffraction. We also encouraged
the young generation in this research field by awarding the best poster prize to one graduate student.

Program
10:00- Opening Address

Hiroshi Kondo (Keio University, VSX Users’ Organization)

10:05- Guest Address

Ryotaro Tanaka (JASRI)

10:10- Introduction

Shik Shin (ISSP, the University of Tokyo)

10:20- Status of developing the cross-undulator light source at SPring-8 BL07LSU
Iwao Matsuda (ISSP, the University of Tokyo)
10:45- Exploration of Novel Superconductors using Arsenic Chemistry
Minoru Nohara (Okayama University)
11:25- Poster short Presentation
11:50- lunch
13:00- Poster session
14:00- Operando nano-spectroscopy for energy efficient, power generation and energy storage
devices
Masaharu Oshima (SRRO, the University of Tokyo)
14:30- Development of high resolution / angle resolved / ambient pressure soft X-ray emission
spectroscopy system
Yoshihisa Harada (ISSP, the University of Tokyo)
15:00- Studying spin dynamics by using polarization of x-rays
Hiroki Wadati (ISSP, the University of Tokyo)
15:30- Live cell nano-imaging using X-ray free-electron laser
Yoshinori Nishino (Research Institute for Electronic Science, Hokkaido University)
16:10- Coffee Break
16:30- Development of picosecond time-resolved photoelectron holography using VO2 thin films
Koichi Hayashi (Nagoya Institute of Technology)
16:50- Surface State Analysis on GaN-based Transistor
Yasunori Tateno (Sumitomo Electric Industries Ltd)
17:10- Electric Structure of CrO2 Probed by High-Resolution Soft-X-ray Resonant Inelastic
X-ray Scattering in Magnetic Field
Hidenori Fujiwara (Grad. Sch. of Eng. Sci. Osaka University)
17:30- Analysis of Structures and Electronic States of [Active-site] in Functional Materials by
Microscopic High-resolution Two-Dimensional Photoelectron Spectroscopy
Munetaka Taguchi (Nara Institute of Science and Technology)
17:50- Operando observation of the activation and hydrogenation processes of CO2 on Cu basedmodel catalysts using ambient pressure photoelectron spectroscopy at the freeport ofSPring-8 BL07LSU
Jun Yoshinobu (ISSP, the University of Tokyo)
18:10- Closing address

Yoshiyuki Amemiya (The University of Tokyo)

4. Seminar(ISSP Lectures by Visiting Professors)
Date: April 16, 2015
Title: Observation of quadrupole moment ordering with resonant x-ray diffraction
Speaker: Dr. Yoshikazu Tanaka (RIKEN)(ISSP Colloquium)
Date: May 7, 2015
Title: Soft X-ray emission spectroscopy: trends and recent topics in SPring-8
Speaker: Dr. Yoshihisa Harada (ISSP, the University of Tokyo)
Date: May 7, 2015
Title: Resonant Inelastic X-ray Scattering research of strongly correlated electron systems
at NSRRC -Sr3NiIrO6 and Bi2212Speaker: Dr. Jun Okamoto (National Synchrotron Radiation Research Center)
Date: May 11, 2015
Title: Spin-resolved simultaneous 2D-ARPES with very high spin detection efficiency by
combining a PEEM, momentum microscope and 2D imaging spin filter
Speaker: Dr. Shigemasa Suga (Max-Planck-Institute of Microstructure Physics, Halle,
Germany. Institute of Sci. & Ind. Research, Osaka University, Japan)(LASOR Seminar)
Date: June 9, 2015
Title: Optical excitation of topological magnetic orders
Speaker: Dr. Naoki Ogawa (RIKEN CEMS)
Date: July 22, 2015
Title: Understanding biological processes through 3D structures of proteins-molecularmechanisms of tumor suppression and neural circuit formation
Speaker: Dr. Shuya Fukai (SRRO, the University of Tokyo)
Date: September 1, 2015
Title: Fundamental Study on the Functional Thiolate Self-Assembled Monolayers:
its Photoexcitation and Multi-Function Attachment
Speaker: Dr. Hiroyuki S. Kato (Graduate School of Science, Osaka University)
Date: November 11, 2015
Title: Prediction of an arc-tunable Weyl Fermion metallic state in MoxW1-xTe2
Speaker: Dr. Tay-Rong Chang (National Tsing Hua University)
Date: November 25, 2015
Title: Silicene, germanene and stanene: novel synthetic 2D electronic materials beyond
graphene
Speaker: Dr. Guy Le Lay (Aix-Marseille University)

Date: December 8, 2015
Title: Quantum anomalous Hall effect in magnetic topological insulators
Speaker: Dr. Ke He (Tsinghua University)
Date: March 8, 2016
Title: Elucidation of the folding movement of proteins by the high-speed single molecule
fluorescence spectroscopy
Speaker: Dr. Satoshi Takahashi (Tohoku University)
Date: March 18, 2016
Title: Determining the valence of Mn4Ca clusters in the active site of photosystem II inphotosynthesis
Speaker: Dr. Yasufumi Umena (Contract associate professor, Okayama University)

STUDY OF L-EDGE RESONANT MAGNETO-OPTIC KERR EFFECT
OF A BURIED FE NANOFILM
Y. Kubota,1 M. Taguchi,2 Sh. Yamamoto,1 T. Someya,1 Y. Hirata,1 K. Takubo,1 M. Araki,1 M.
Fujisawa,1 H. Narita,1 K. Yamamoto,1 Y. Yokoyama,1 S. Yamamoto,1 H. Wadati,1 S. Shin,1
and I. Matsuda1
1Institute for Solid State Physics, The University of Tokyo,
Kashiwa-no-ha, Kashiwa, Chiba 277-8581, Japan
2
RIKEN SPring-8 Center, Sayo, Hyogo 679-5148, Japan
Introduction
Magnetism has been one of the central issues in condensed matter physics and the magnetic
information has been measured experimentally by means of the magneto-optical effects, suchas magneto-optical Kerr effect (MOKE). In the MOKE measurement, rotation of the lightpolarization plane is measured before and after refection at a sample surface. Change of thepolarization angle is defined as the Kerr rotation angle (K) that depends on magnetization ofa sample. The K value typically ranges < 1 degree for a bulk crystal of magnetic transition
metal, such as Fe, Co and Ni, when it is measured with visible light. On the other hand, it has
been reported recently that the K becomes significantly large in the ultraviolet ~ X-ray region
when a probing photon energy is tuned at the absorption edge of the element atoms thatcompose a sample. The phenomenon has been called the resonant MOKE (RMOKE) and it
has allowed us to evaluate magnetic properties of a material with element-selectivity andresonant enhancement. In a case of RMOKE for a Fe film, the experimental K value reaches
10 degree at the L3 and L2 photon energy region. On the other hand, research of the firstprinciple calculation reported that K is about 50 degree when photon energy is at the Fe
L2-edge for the bulk Fe metal. There still remains discrepancy of the K values between
experiment and theory, which requires their systematic comparisons of the RMOKE spectra
for proper understandings of the magneto-optical phenomena.
In the present research, we examined L-edge RMOKE of the buried Fe nanofilm bycomparing K spectra obtained by the measurement and by calculations with two-types oftheoretical models: classical electromagnetic and quantum-mechanics.
Experimental method
Figure 1 (a) shows a schematic drawing of heterostructure of the Ta/Cu/Fe/MgO sample. A
30-nm-thick Fe film was grown on the MgO(001) substrate and it was capped with Ta (2 nm
thick) and Cu (2 nm thick) layers to prevent the Fe layer from oxidization. The buried Fe
nanofilm has an in-plane easy direction of magnetization. Measurement of RMOKE wasmade at the SPring-8 BL07LSU beamline with geometry of longitudinal MOKE (L-MOKE),
as shown in Fig.1 (b). The s-polarized light was incident onto the sample with incident angle(i) of about 80 degree with respect to the surface normal. Magnetic field (B) of +/- 0.3 T wasapplied along in-plane direction of the sample surface, which is large enough to saturate the
Fe magnetization. A K value was measured by the rotating-analyzer ellipsometry (RAE)
method. The RAE unit was composed of a multi-mirror and a micro-channel plate (MCP) as
shown in Fig. 1(b). Details of the measurement technique can be found elsewhere. In brief, K
can be determined from difference of the ellipsometry curves taken at the opposite magnetic
field: 2K =  (+B) -  (-B), as shown in Fig. 1 (c)Results and discussion
Figure 2 (a) shows the K spectrum of the buried Fe nanofilm taken at Fe L2,3-edges. It
shows two peaks with negative and positive K values that are 7.1 and -18.2 degrees andcorrespond to the L2 and L3 absorption edges, respectively. In Fig. 2 (b), a curve of the K
spectral simulation, based on classical electromagnetic theory with the empirical opticalconstants. Comparing with the measured value in Fig.2 (a), one finds that the two results ofthe experiment and the calculation match with each other overall, reproducing the sign
inversion of K between the L2 and L3 absorption edges. Results of this quantum-mechanicalspectral calculation based on the configuration interaction (CI) model in Fig. 2 (c) show good
agreement with the experimental K spectral feature at pre-edge of the Fe L3-edge (Fig.2(a)).
In contrast to the phenomenological calculation, the dip-like structure at 707 eV is reproduced,
which is likely derived from the quantum-mechanical effect. Near the L2-edge, however, theCI model calculation indicates large K = 48 degree. Moreover, its simulated spectrum does
not show the sign inversion in Fe L-edge energy region, which contradict to the experimental
result.

Operando spectroNanoscopy of energy efficient devices, power generation
devices and energy storage devices using 3D-Nano-ESCA and its prospects11Masaharu Oshima and 2Naoka Nagamura
Synchrotron Radiation Research Organization, The University of Tokyo, Tokyo, Japan,
2

National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan

In order to investigate pin-point electronic structure in green nano-devices such as energy
efficient devices like ReRAM and graphene FET, power generation devices like fuel cells andphotocatalysts for hydrogen generation and energy storage devices like Li/Na ion batteries
during device operation, we have developed soft X-ray scanning photoelectron emission
microscopy (SPEM) with an angle-resolved electron analyzer (3D-nano-EASCA). The spatial
resolution was determined to be 70 nm [1]. Furthermore, we modified 3D-nano-ESCA so thatdifferent voltages can be independently applied to five electrodes for gate, source, drain andground in a sample holder connected to a semiconductor parameter analyzer.
The first example for energy efficient devices is organic FET which has attracted great
attention because of their unique properties such as light weight, flexible electronics and low
cost. Prof. J. Takeya’s group succeeded in developing good performance OFETs using
single-crystalline C10-DNBDT-NW films on SiO2 (200 nm)/Si substrates [2]. In this study,
OFETs for operando nano-spectroscopy were fabricated using ultrathin (3ML or 12 nm)
single-crystalline C10-DNBDT-NW films on SiO2 (200 nm)/Si substrates, with a backgate
electrode and top source/drain Au electrodes. C 1s line profiles under biasing at the backgate
and drain electrodes were measured. Figure 1 shows schematic of SPEM measurements, (b)Sample holder with five individual electrodes, optical microscope image of OFET, and Au 4f
SPEM of OFET. As shown in Fig. 2, this ultrathin OFET exhibits good electrical properties.
Operando measurements of line profiles of C 1s binding energy across the OFET channel
from drain to source, and gate bias voltage dependence of C 1s binding energy and draincurrent are shown in Fig. 3, suggesting that drain current proportional to hole concentration in
the channel generated by the back gate biasing is well correlated by the simple Boltzmann
distribution with the chemical potential [3]. Furthermore, potential profiles in the channel
from source to drain are in good agreement with potential profiles calculated by gradualchannel approximation (GCA) [4].
As for power generation devices, we have investigated pin-point electronic structure ofphotocatalysts for water splitting. Prof. K. Domen’s group succeeded in developing novel
water splitting photocatalysts La2Ti5CuS5O7 (LTC) and La2Ti5AgS5O7 (LTA) as a p-typesemiconductor electrode with Sc and Ga doping [5]. We have analysed each photocatalyst
with the size ranging from 350 nm to 1000 nm in diameter and several μm in length (Fig. 4)
by 3D-nano-ESCA. It is revealed that shift of valence band spectra and core levels towards
lower binding energy, suggesting successful hole doping probably into Cu 3d and Ag 4dbands by substituting Ti sites by Sc and Ga ions. [6]We have also attempted to analyze local electronic structure of cathode materials for Li ion
batteries, that is LiNi1.5Mn0.5O4 after charging and discharging, and found a tendency that Mn
2p core level spectra show slightly more reduced features at the edge of grain than at the plane
after charging, while Ni 2p spectra show almost no difference.
Thus, operando spectroNanoscopy can provide us with useful information for improving
performances of green nano-devices. However, there still remain several issues to be
overcome for “more powerful” spectroNanoscopy. The most important issue is spatial
resolution improvement. For spectroNanoscopy for practical nanodevices, 10 nm spatial
resolution is required. The second issue is photon flux hopefully greater than 1010 ph/s. Thethird issue is ambient pressure spectroNanoscopy at several Torr. The fourth issue should be
nanoARPES.
We’d like to thank H. Matsui, J. Tsurumi, J. Takeya, E. Sakai, T. Hisatomi, K. Domen, D.
Asakura, and E. Hosono for their collaborations.

REFERENCES:[1] K. Horiba et al., Rev. Sci. Instrum. 82, 113701 (2011).
[2] J. Soeda et al., Applied Physics Express 6, 076503 (2013).
[3] N. Nagamura et al., Appl. Phys. Lett. 106, 251604 (2015).
[4] N. Nagamura et al., to be submitted.
[5] J-Y. Li et al., Energy and Environmental Science DOI: 10.1039/c4ee00091a, (2014).
[6] E. Sakai et al., to be submitted.

REFERENCES

Fig. 1. (a) Schematic of SPEM
measurements, (b) sample holder,(c) optical microscope image of
OFET, (d) Au 4f SPEM of OFET.

[1] ACTIVITY REPORT OF SYMCHROTRONRADIATION LABORATORY 2014.
Operando measurements
profiles of C 1s
Fig.
[1] 3. (a)ACTIVITYREPORT OF of line
SYMCHROTRON
bindingenergyLABORATORY
across the OFET
channel from drain to
RADIATION
2013.
source, (b) gate bias voltage dependence of C 1s binding
energy and drain current.

Fig. 4. SEM image of Sc-doped
LTC photocatalysts.
Fig. 2. (a) Typical drain and gate current as afunction of gate voltage for OFET and (b) typicaldrain current as a function of drain voltage at
different gate voltage.

OPERANDO SPECTROMICROSCOPY FOR 2D-ELECTRON
TRANSISTORS FOR ENERGY-SAVING ICT*Hirokazu Fukidome*
Research Institute of Electrical Communication, Tohoku University

Our FET exhibits excellent intrinsic carrier mobility >100,000 cm2/Vs. However, degradation
due to the parasitic resistance inhibits further improvement of the high-frequency
characteristic toward THz operations. Further, the extrinsic carrier mobility, including thechannel resistance and parasitic resistance (e.g., contact resistance), is 4,000 cm2/Vs.
Therefore, the negative contribution of the parasitic resistance must be removed. Note that thesource of this phenomenon is the susceptibility of the electronic properties to the surrounding
interfaces, because of the extreme thinness of graphene.
To obtain an effective science-based plan to overcome this problem, microscopic
investigation of the electronic states at the interfaces related to the parasitic resistance isrequired; for example, at the interfaces between the graphene and metals in the source anddrain electrodes. Therefore, we developed operando spectromicroscopy, i.e., x-ray
spectromicroscopic observation under device operation conditions with a high spatial
resolution. This was achieved using photoelectron emission microscopy (PEEM) [1] and 3D
scanning photoelectron microscopy (3D nano-ESCA) [2, 3].
Since 2015, we extended the research target, GaN-HEMT, in addition to graphenetransistors. GaN-HEMT utilizes a 2D electron system at an AlGaN/GaN interface.
GaN-HEMT exhibits both good high-frequency characteristics (>100 GHz) and high output
performances larger than those of Si by more than one order of magnitude.
However, there are some issues to be solved as a reliable millimeter-wave(30GHz-300GHz) communication devices, such as radar. Among them, drain current collapse
is the main issue to acquire the high operation reliability. The drain current collapse is thediscrepancy between DC and RF maximum current. The drain current collapse has beensuggested to originate from electron trapping processes by surface states that exist near thegate where a local electric field is large. The problem is that microscopic mechanism of thetrapping process has not been well characterized because of the lack of material
characterization, although it was characterized by electrical characterization.
The purpose of this work is to microscopically and element-specifically characterize theelectron trapping process by using operando 3D nano-ESCA observation. Then the solution to
improve the high-reliability of GaN-HEMT will be done by feed backing operando 3D
nano-ESCA observation.
Figure 1 shows the pinpoint operando
observation. It is clearly shown that,near the gate where the local electricfield is large, the new peak appears, inaddition to the GaN main peak.
Therefore, the new peak is associatedwith surface electron trapping which
induce the current collapse. This is thefirst direct spectroscopic evidence ofthe surface electron trapping. In
addition to the pinpoint spectra, we did Fig. 1 The appearance of the new peak by thethe line profile analysis. This line gate bias application near the gate.

profile analysis confirm that the new peak associated with surface electron trapping appears
near the gate.
SiN surface passivation of GaN-HEMT has been shown to be effective for the suppressionof the current collapse by electrical measurements. To clarify the mechanism of the
suppression of the current collapse, 3D nano-ESCA observation on the effect of SiN surface
passivation, as shown in Fig. 2. The SiN
passivation diminishes the new peakassociated with the electron trapping,while, without the SiN passivation, thenew peak is present. This observation
support the conclusion from Fig 1 that the
new peak is associated with the current
collapse. Furthermore, the role of the SiN
passivation is the vanishment of the Ga
species associated with the electron
Fig. 2 The effect of the SiN passivation.
trapping.
In conclusion, we successfully extended the research target of 3D nano-ESCA, GaN-HEMT,in addition to graphene transistors. The obtained results are surely useful to solve the current
collapse that induces the operation instability of GaN-HEMT.
REFERENCES[1] H. Fukidome et al., Sci. Rep. (2014).
[2] H. Fukidome et al., APEX (2014).

High-energy-resolution soft x-ray emission study of LiCoO2
Takaaki Sudayama1, Daisuke Asakura1, Eiji Hosono1, Jun Miyawaki2,3, Hisao Kiuchi4,
Hideharu Niwa2,3, and Yoshihisa Harada2,3
1

Research Institute for Energy Conservation, National Institute of Advanced Industrial Science andTechnology
2Institute for Solid State Physics, The University of Tokyo

3

Synchrotron Radiation Research Organization, The University of Tokyo
4

Department of Applied Chemistry, The University of Tokyo

LiCoO2 is a typical cathode material for Li-ion battery. Many studies have reported that the
average valence of Co reversibly changes between Co3+ for discharged state (LiCoO2) andCo3.5+ for charged state (Li0.5CoO2) in the charge-discharge process by using hard (CoK-edge) or soft (Co L-edge) x-ray absorption spectroscopy (XAS) [1-2]. Although the Co
L-edge XAS with analyses using charge-transfer multiplet calculations provides us theinformation of the Co 3d orbital, x-ray emission spectroscopy (XES) is more appropriate toseparately evaluate the electronic structures of Co3+ and Co4+ [3]. In this study, in order toinvestigate the electronic structure changes in charge and discharge processes for LiCoO2, we
performed ex situ Co 2p XAS and high-energy-resolution XES measurements.
LiCoO2 powder was prepared by a sol-gel method. LiCoO2 powder (75 wt %), acetylene
black (20 wt %), and PTFE (5 wt %) were made into a paste and then were pressed tostainless mesh. The LiCoO2 cathode was assembled with a Li-metal counter electrode, aLi-metal reference electrode and a 1M LiClO4/EC-DEC electrolyte solution as athree-electrode beaker cell. Cyclic voltammetry (CV) was employed for the charge
experiment. The scan speed was set to 0.5 mV/s. The cut-off voltages were 4.2 V (vs. Li/Li+)for charge and 3.0 V for discharge, respectively. We prepared the samples of initial state
before charging, charged state (4.2 V), and discharged state (3.0 V) for the first cycle. In
addition, a sample of after the 6th cycle (3.0 V) was also prepared. After the samples weretaken out from the cell in the grove box, they were transferred to a vacuum chamber by using
a transfer vessel filled with Ar gas to avoid exposure to air. The XES and XAS experiments
were carried out using ultrahigh-resolution x-ray emission spectrometer, HORNET [4] at
BL07LSU of SPring-8. An excitation energy Ein of 779.5 eV corresponding to the main peak
position of the Co L3-edge absorption spectrum was used for XES. For the XAS
measurements, total electron yield (TEY) detection mode was employed. All the XES/XAS
measurements were performed at room temperature. We performed the spectral analyses for
the XAS results by using the CTM4XAS software program based on the charge-transfer
multiplet calculations [5].
Figure 1 shows the experimental results of Co 2p XAS of LiCoO2 and a calculated spectrum
for Co3+ low spin (LS) state. The spectra of the initial state, the discharged state, and thedischarged state after 6th cycles have the same line shape and their shapes are consistent withthe calculated spectrum of Co3+ LS state. The results indicate that the redox reaction of Co isreversible at least up to 6th cycle. On the other hand, in the case of the charged state, energy
shift of L3-edge peak-top toward higher energy was observed and a shoulder structure ofhigher energy side in L3-edge was enhanced. The results indicate that the Co3+ state ispartially oxidized to Co4+ with the charge process. The ratio of Co3+ to Co4+ would be almost
even considering the cut-off voltage for the charged state is 4.2 V (in which the
charge-discharge capacity is about 150 mAh/g corresponding to 0.5Li+ extraction).

Figure 2 shows the Co 2p resonant XES spectra of LiCoO2 for the excitation energy of779.5 eV. In the charge state, the XES peaks between 776.0 eV and 778.0 eV corresponding
to d-d excitation drastically changed with increasing Co4+. Also, a slight decrease of the XES
spectral weight below 776.0 eV related to charge-transfer excitation for O 2p → Co 3d ascompared to charged state was observed. In the near future, we will carry out the spectral
analyses for the XES results by using the charge-transfer multiplet calculations.
In summary, we performed ex situ Co 2p XAS and high-energy-resolution XES for LiCoO2.
The XES results exhibited significant changes in the line shape due to a redox reaction
between Co4+ and Co3+ by charge/discharge processes. It was observed that for the charged
state, d-d excitation drastically changes with increasing Co4+ and the charge-transfer
excitation is slightly weakened.

Fig. 1 Co 2p TEY XAS spectra for
LiCoO2

Fig. 2 Co 2p resonant XES spectra for
LiCoO2 taken with an excitation energyof 779.5 eV.

References[1] I. Nakai et al., J. Power Sources 68, 536 (1997).
[2] L. A. Montoro et al., Electrochem. Solid State Lett. 3, 410 (2000).
[3] A. Kotani et al., Rev. Mod. Phys. 73, 203 (2001).
[4] Y. Harada et al., Rev. Sci. Instrum. 83, 013116 (2012).
[5] E. Stavitski et al., Micron 41, 687 (2010).

CHARGE EXCITATIONS IN HIGH-TC CUPRATESSTUDIED BY RESONANT INELASTIC X-RAY SCATTERING
AT THE OXYGEN K-EDGE
Kenji Ishii1, Kentaro Sato2, Masaki Fujita2,
Jun Miyawaki3, Hideharu Niwa3, Yoshihsa Harada3
1

Synchrotron Radiation Research Center, National Institutes for Quantum and Radiological Scienceand Technology
2
Intsitute for Materials Research, Tohoku University
3
Synchrotron Radiation Laboratory, The Institute for Solid State Physics, The University of Tokyo

High-Tc superconductivity in cuprates emerges when holes or electrons are doped as mobile
carriers in the antiferromagnetic Mott insulator, and antiferromagnetic fluctuation is believed
to be the most possible origin of the superconductivity. Therefore, comprehensive observationof charge dynamics of the doped carriers and spin dynamics of the antiferromagnetic
fluctuation is a prerequisite for understanding the superconductivity. Furthermore, the doped
cuprates are suitable for the study of electron dynamics in strongly correlated electron
systems because only a limited number of orbitals contribute to the electronic states near the
Fermi energy. Inelastic neutron scattering is traditionally used to measure spin excitations inenergy-momentum space and Cu L3-edge resonant inelastic x-ray scattering (RIXS) has
recently become an alternative. Complementary use of the two inelastic scattering techniques
enables one to explore the spin excitations in wide energy range [1]. On the other hand,
momentum-resolved charge excitations have been studied by Cu K-edge RIXS so far [2] but ahuge elastic tail makes it difficult to elucidate the charge excitation at low energy. Here wedemonstrate that O K-edge RIXS is another technique to observe dispersive charge excitationsin the hole-doped cuprates.
The experiment was preformed at BL07LSU of SPring-8 using the HORNET spectrometer.
Total energy resolution was 190 meV. Single crystals of La2-xSrxCuO4 (x = 0, 0.075, and0.18) were mounted so that the scattering plane is parallel to the ac-plane of the crystals andkept at the base temperature around 30 K. The scattering angle (2) was 90 degree and themomentum was scanned by rotating the crystals along the b-axis. In this report, we use themomentum transfer (q) projected on the CuO2 plane. In the x-ray absorption spectrum (XAS)
of La2-xSrxCuO4, two peaks are observed near the O K-edge [3]. The peak at lower energy is
the O 2p state of doped holes (hole peak) while high-energy peak corresponds to the statehybridized with the Cu 3d upper Hubbard band (UHB peak). We tuned the incident photon
energy to either of the peaks. The incident photon is -polarized.
Figure 1(a) shows O K-edge RIXS spectra of x = 0.18. Incident photon energy is selected at
the hole peak in XAS. In contrast to the momentum-independent bimagnon excitations in theparent compound (x = 0) [4], a dispersive mode is clearly observed below 1 eV. Such adispersive mode in sub-eV range has been also observed in electron-doped Nd2-xCexCuO4
using RIXS at Cu K- and L3-edges [1] and it is assigned to charge excitations. Furthermore, arecent theoretical calculation based on the t-J model predicts that dynamical charge
correlation function in the sub-eV range is qualitatively similar between hole- andelectron-doped cuprates [5]. Therefore we reasonably ascribe the dispersive mode to thecharge origin. In Fig. 1(b), we compare the spectra of x = 0.075 taken at the incident photon
energy of the hole peak (528.8 eV) and UHB peak (530.5 eV) of XAS. The dispersive modeis also observed in x = 0.075 and the spectra at the two incident photon energies are almost
identical except for the intensity of elastic or quasi-elastic scattering. It confirms that thedispersive mode is a Raman feature rather than incoherent fluorescence.
It is noted that RIXS response is not necessarily the same between hole- and electron-doped
cuprates because of opposite sign of the core-hole potential in the intermediate state. Whilethe charge excitations are observed by the Cu L3-edge RIXS spectra for electron-doped
cuprates, they have not been identified so far for hole-doped cuprates. Our result proves that
O K-edge RIXS of hole-doped cuprates is an alternative to the Cu L3-edge RIXS ofelectron-doped cuprates for the study of momentum-resolved charge excitations.
In conclusion, we succeeded to observe dispersive charge excitations in the hole-doped
cuprates La2-xSrxCuO4 by the O K-edge RIXS. Combined with the Cu K-edge RIXS, we are
now able to measure charge dynamics of hole-doped cuprates in wide energy-momentum
space.

Figure 1 (a) Momentum dependence of O K-edge RIXS spectra of La2-xSrxCuO4 x = 0.18. (b)O K-edge RIXS spectra of x = 0.075. Incident photon energy is tuned to either hole peak
(528.8 eV) or UHB peak (530.5 eV) in XAS.
REFERENCES[1] K. Ishii et al., Nat. Commun. 5, 3714 (2014).
[2] K. Ishii et al., J. Phys. Chem. Solids 69, 3118 (2008).
[3] C. T. Chen et al., Phys. Rev. Lett. 66, 104 (1991).
[4] V. Bisogni et al., Phys. Rev. B 85, 214527 (2012).
[5] T. Tohyama, J. Electron Spectrosc. Relat. Phenom. 200, (2015).
[6] R. Comin et al., Annu. Rev. Condens. Matter Phys. 7, 369 (2016).

VALENCE FLUCTUATION IN QUANTUM CRITICAL Yb(Al,Fe)B4
STUDIED USING SOFT X-RAY TIME RESOLVED PHOTOEMISSION
SPECTROSCOPY. II
M. Okawa1, K. Akikubo2, S. Yamamoto2, I. Matsuda2, S. Shin2, S. Suzuki3,
S. Nakatsuji3, T. Saitoh1
1
Department of Applied Physics, Tokyo University of Science2
Synchrotron Radiation Laboratory, Institute for Solid State Physics, University of Tokyo
3
Division of New Materials Science, Institute for Solid State Physics, University of Tokyo
Introduction
In some heavy-fermion systems, the quantum critical point (QCP), which is thesecond-order phase transition point or first-order transition end point at absolute zero, can be
induced by non-thermal parameters, i.e., magnetic field, pressure, and chemical doping. QCP
is strongly attractive in the condensed matter studies because a quantum fluctuations
associated with QCP can cause exotic phenomena such as non-Fermi liquid metallic state andunconventional superconductivity [1]. β-YbAlB4 is the first-discovered heavy-fermion
superconductor (Tc = 80 mK) in Yb-based systems [2], and is just at the QCP (or the quantum
critical phase) under ambient pressure and zero field [3]. In addition, the Fermi-liquid metal
α-YbAlB4, which is another polymorph of β-YbAlB4, shows the same quantum criticality
with the β-phase by slight doping (~1.4%) of Fe to the Al site [4]. According to a hard x-ray
photoemission study [4], this QCP coexists with the unprecedented strong valence fluctuation(the Yb valence of <2.8+), which cannot be explained by the conventional Doniach phase
diagram, suggesting the role of the valence instability for the quantum critical phenomena.
Furthermore, a recent Mössbauer spectroscopy study [6] reported that the valence fluctuationin the YbAlB4 system shows the very slow time scale of a few nanoseconds, which may be amanifestation of the valence quantum criticality. In order to investigate the relaxation
dynamics of the valence fluctuating phenomena in α-YbAl1-xFexB4, we performed soft x-ray
time-resolved photoemission spectroscopy (SX-TRPES) of the whole valence band in which
both Yb2+ and Yb3+ components of the Yb 4f state are included.
ExperimentSingle crystals of α-YbAl1-xFexB4 with x = 0 (Fermi liquid-like), 0.013 (quantum critical),
0.098 (antiferromagnetic) were grown by the Al-flux method SX-TRPES experiments werecarried out at BL07LSU of SPring-8 using a VG Scienta ARTOF 10k analyser. The repetition
rate of pump laser pulses (1.5 eV) was 1 kHz. The photon energy of probe synchrotron pulses
was set to 253 eV. To obtain clean crystal surfaces, we fractured samples in situ. All data
were recorded at the sample temperature of ~20 K. The Fermi level (EF) was aligned using thevalence band spectrum in α-YbAlB4 recorded using hard x-ray photoemission spectroscopy at
BL47XU.
Results
Figure 1(a) shows the valence-band spectrum without pump pulses in the x = 0 sample.
Using the photon energy of 253 eV, the bulk 4f structure of both Yb2+ (near EF) and Yb3+
(5-12 eV) were appeared in the valence-band spectrum. The surface 4f state, which are atslightly higher-energy side of the bulk Yb2+ structure as very broad peaks, was not observed.
For the x = 0.013 and 0.098 samples, we obtained the results similar to that of the x = 0
sample. Thus, we can investigate the relaxation dynamics of the bulk 4f state in
α-YbAl1-xFexB4 using SX-TRPES.

(a)

x=0

Intensity (arb. units)

Yb3+

Yb2+

12

14

10

4

6

8

-2

0

2

Binding energy (eV)Intensity (arb. units)(b) 40x=0
x = 0.013
x = 0.098

20
0
-20
-40
0

1

2

3

4

5

Delay (ns)Fig. 1: (a) The valence-band spectrum of α-YbAl1-xFexB4 (x =0). (b) Delay-time dependence of the Yb3+ intensity in the x =0, 0.013, and 0.098 samples. The shaded area indicates
uncertainty in intensity determinations.

Figure 1(b) shows the delay-time (t) dependence of the Yb3+ intensity in the x = 0, 0.013,
and 0.098 samples. The intensity was determined as the integrated intensity at the energy
region of the Yb3+ 4f structure, which is shown in Fig. 1(a), of the difference spectra between
pumped and t < 0 measurements. The uncertainty in intensity determinations, which wasestimated from the difference spectra of the measurements in the same condition at t < 0, isappeared as the shaded area. For the all samples, as shown in Fig. 1(b), the difference
intensity is in the range of the uncertainty in the measured t range. Therefore, in the relaxation
dynamics of the Yb valence in quantum critical α-YbAl1-xFexB4, the very slow process with
the nanosecond time scale does not exist. To clarify the electron dynamics and its relation
with the quantum critical phenomena in α-YbAl1-xFexB4, our results suggest that more fasttime scale investigations of the electronic structure are desired, e.g., using extreme ultraviolet
laser based TRPES.

REFERENCES[1] P. Gegenwart, Q. Si, and F. Steglich, Nature Phys. 4, 186 (2008).
[2] S. Nakatsuji et al., Nature Phys. 4, 603 (2008).
[3] Y. Matsumoto et al., Science 331, 316 (2011).
[4] K. Kuga, Ph.D. thesis, University of Tokyo (2011).
[5] M. Okawa et al., Phys. Rev. Lett. 104, 247201 (2010).
[6] T. Kobayashi, JPS 2013 Autumn Meeting, 27pEC-3 (2013).

DEVELOPMENT OF PICOSECOND TIME-RESOLVEDPHOTOELECTRON HOLOGRAPHY
Kouichi Hayashi**

Department of Physical Science and Engneering, Nagoya Institute of Technology

Iwao Matsuda, Hiroki Wadati, Susumu Yamamoto
Synchrotron Radiation Laboratory, The Institute for Solid State Physics, The University of Tokyo

Takayuki Muro, Tomohiro Matsushita
Japan Synchrotron Radiation Research Institute/ SPring-8

Yoshihito Tanaka
Graduate School of Material Science, University of Hyogo
1. Introduction
As represented by dopants in semiconductors, in most of materials have active sites,
providing novel functions. To reveal atomic structures of the active sites, we have conducted
researches of atomic resolution holography for various functional materials, because theatomic resolution holography provides 3D atomic images around specific elements within a
few nm in a radius.[1] However, all of its achievements are about static structures. Therefore,
we have planned time-resolved atomic resolution holography. Since we thought that thesurface structural change induced by laser can be observed by photoelectron holography,
among various atomic resolution holography methods, photoelectron holography is surface
sensitive.
In the present experiment, we chose VO2 thin films as a measure sample. And, we
tried to observe time-resolved photoelectron holograms.[2,3]
2. Experimental
The experiment was carried out at BL07LSU in SPring-8. The operation mode was
D-mode (1/7 filling+5 bunches). We used the third bunch at each period to synchronize thefemtsecond laser pulse (38.6 mW). For the adjustment of the x-ray bunch and the laser pulse,
we used the photoelectron signals Si (111).
Subsequently, we measured valence band (VB) photoelectron spectra from the VO2thin films with the incident energy of 253 eV. The delayed time was 0, 0.05, 0.1, 0.2, and 1.0
nm. The sample temperature was maintained at 230 K. Then, we measured V3p peak with
the incident energy of 700 eV at room temperature and 240K. The acquisition time at room
temperature and 240 K were 1 h and 10 h, respectively. The measured sample of the VO2 thinfilm was fabricated at Muraoka laboratory in Okayama laboratory. The transition
temperature in the films was 295 K on heating cycle and 285 K on cooling cycle, while theMIT occurs at 340 K in bulk samples.[3]3. Results and discussion
Figure 1(a) shows the VB
photoelectron spectrum at 0.1 ns delayed
time. For comparison, the spectrum
without laser irradiation was plotted
together. Whole of the laser-ON spectrum
was shifted by 0.5 eV. Similar phenomenon
was observed for the 1.0 s delayed
spectrum as shown in Fig.1 (b). The
spectra of the VB were recovered at thenext bunches (+684.3 ns).
Initially, the reason of these shifts
is considered to be charge-up of the sample

Fig.1 Valence band spectra of VO2 after laser
irradiations.

due to strong laser irradiation. However,the values of the edges of the spectra forlaser-ON and OFF are mostly same, as
indicated by circles in Fig.1. This showsthat the charge-up is not intrinsic reason.
Thus, further discussion is necessary tounderstand the spectrum modification
owing to the laser irradiation.
Figure 2 shows the V 3p and O 2s
photoelectron
holograms
atroom
temperature and 230 K, at which the VO2thin films exhibit metallic and insulator
phases, respectively. Since visibilities ofthese patterns at room temperature and
240 K are largely different due to thedifference of acquisition times, it is difficult
to discuss quantitatively structures at themetallic and insulator phases. If we can
Fig.2 Photoelectron holograms of V 3p and O 2s atenhance the statistics of the hologram data
room temperature and 240 K.
by the symmetric manipulation using the
crystallographic symmetry of the sample surface, more quantitative discussion will bepossible.
4. Conclusion
We tried to carry out the time-resolved photoelectron holography experiments using
the VO2 epitaxial thin film samples. The changes of the photoelectron spectra were clearlyobserved owing to the laser irradiation. However, we knew that the photoelectron yields were
not enough to observe the hologram patterns in the time-resolved experiments, because
number of the events is much less than that in normal photoelectron holography experiments.
This problem will be resolved with a 200 kHz laser.

REFERENCES[1] K. Hayashi, N. Happo, S. Hosokawa, W. Hu, and T. Matsushita, J. Phys.: Condens. Matter 24,
093201 (2012).
[2] M. Hada, K. Okimura, and J. Matsuo, Phys. Rev. B 82, 153401 (2010).
[3] K. Okazaki, H. Wadati, Fujimori, M. Onoda, Y. Muraoka, and Z. Hiroi, Phys. Rev. B 69, 1651041(2004).

EFFECT OF OXYGEN VACANCIES ON THE PHOTOEXCITEDCARRIER LIFETIME ON TITANIUM DIOXIDE SURFACES
Kenichi Ozawa1, Susumu Yamamoto2, Roya Liu2, Koki Inoue3, Taku Higuchi3,
Hiroshi Sakama3, Kazuhiko Mase4,5, Iwao Matsuda2
1
Department of Chemistry, Tokyo Institute of Technology
2

Synchrotron Radiation Laboratory, The Institute for Solid State Physics, The University of
Tokyo
3

4

Department of Physics, Sophia University

Institute of Materials Structure Science, High Energy Accelerator Research Organization
5

SOKENDAI (The Graduate School of Advanced Studies)

INTRODUCTION
A novel property of titanium dioxide (TiO2) as a photocatalyst has attracted considerable
interests from both scientific and industrial communities since the discovery of the HondaFujishima effect. The photocatalytic activity is initiated by absorption of the ultraviolet lightand creation of excited carriers (electrons and holes in the conduction and valence bands,
respectively), which diffuse to the surface and interact with adsorbed chemical species.
Therefore, extensive efforts have been devoted to elucidate dynamics of excited carriers by
various time-resolved techniques such as absorption spectroscopy, reflectance spectroscopy,
photoluminescence measurements, conductivity measurements, photoelectron spectroscopy,etc.
It has been considered that there is a correlation between the photocatalytic activity and thecarrier lifetime, i.e., the longer the lifetime is, the higher the activity is. In our recent study
using time-resolved photoelectron spectroscopy (TRPES) [1], a relevance between the surface
potential, which acts as a barrier for the carriers to be transported from the bulk to the surface,
and the carrier lifetime has been examined for anatase and rutile TiO2 single crystal surfaces.
It is found that, although the carrier lifetime is greatly influenced by the barrier height, thecarriers are expected to survive longer on the anatase surface than on the rutile surface if thepotential heights are nearly equivalent on these surfaces. The longer lifetime on the anatasesurface correlates well with the higher photocatalytic activity of anatase TiO2 in comparison
with rutile TiO2.
The next question is what are determining factors of the carrier lifetime beyond the surface
potential. To answer this question, we compared the carrier lifetimes on the rutile TiO2(110)
surfaces with different O vacancies. Influence of the carrier trap states and the carrier trap
cross section on the carrier lifetime is verified by TRPES.
EXPERIMENTAL
The TRPES measurements by a pump-probe method were carried out at SPring-8
BL07LSU (Proposal No. 2015A7487). The photon energies of the pump laser and the probe
synchrotron radiation were 3.06 eV and 600 eV, respectively. The rutile TiO2(110) surface
was cleaned by cycles of Ar+ sputtering and annealing in O2 atmosphere. The clean (110)
surfaces exhibited a 1×1 low energy electron diffraction patterns, respectively. The O
vacancies on the (110) surface were created by mild Ar+ sputtering with an ion beam energyof 1.25 kV for 10 min.

RESULTS AND DISCUSSION
Ar+ sputtering of TiO2 preferentially removes O atoms from the surface and forms Ti3+
species, which give a state at 457 eV in the Ti 2p3/2 core-level region (Fig. 1a). The amountof the Ti3+ species is estimated from the Ti3+ peak intensity to be 2.6×1021 cm–3, which isabout 4 times larger than that on the surface before sputtering. The Ti3+ species also give astate in the band-gap region (Fig. 1b), and this state should act as an carrier tarp state when
the photoexcited carriers are generated. Thus, it is expected that a larger amount of Ti 3+
leads to the shorter carrier lifetime. However, the estimated lifetime on the sputtered surface
is longer (300 ns) than on the pre-sputtered surface (50 ns), as shown in Fig. 2. This
discrepancy is understood if the potential barrier height at the surface is taken into account.
On both sputtered and pre-sputtered surfaces, the TiO2 bands are bent downwardly withmagnitudes of band bending of respectively 0.55 eV and 0.4 eV, which are equivalent to thebarrier heights, The larger barrier height on the sputtered surface makes the photogenerated
holes reach to the surface much less frequently. Thus, the electron-hole recombination issuppressed at the surface, and the longer carrier lifetime is realized. If the flat bandcondition is realize, the carrier lifetimes should be 0.2 ps and 2 ps on the sputtered andpre-sputtered surfaces, respectively. The shorter lifetime on the sputtered surface is aconsequence of a larger density of the Ti3+-derived carrier trap state.
The flat-band carrier lifetime 𝜏0 is given by 𝜏0 = 1/(𝜎p 𝑣p 𝑁p ), where 𝜎p , 𝑣p , 𝑁p are a
capture cross section of the carriers, a carrier thermal velocity and a density of the carrier trap
states (a subscript p means that the carriers are the holes). Taking 𝑣p = 6.7×106 cm/s,
which is a typical value for the holes in TiO2, we obtain the hole capture cross section 𝜎p = 3
×10–16 cm2 for the sputtered surface (𝑁p = 2.6×1021 cm–3 and 𝜏0 = 0.2 ps). On the other
hand, when we use the values for the pre-sputtered surface (𝑁p = 2.6×1021 cm–3 and 𝜏0 = 2ps), 𝜎p is evaluated to be 1×10–16 cm2. The obtained 𝜎p values coincide reasonably witheach other, indicating that the electron-hole recombination occurs via hole trapping by the
Ti3+ state in the band gap with the hole cross section in the order of 10–16 cm2. The electron
capture cross section has been reported to be 10–17—10–16 cm2 [2]. Thus, there is no
significant difference of the cross sections between the electrons and the holes on the TiO2
surfaces.

SPV Shift (eV)SPV Shift (eV)+Fig. 1 (a) Ti 2p3/2 and (b) valence band spectra ofpre- and post-sputtered TiO2(110) surfaces.
REFERENCES[1] K. Ozawa et al., J. PHYS. CHEM.. LETT. 5, 1953 (2014).
[2] R. H. Wilson, J. ELECTROCHEM. SOC. 127, 228 (1980).

Ar −sputteredTiO 2(110)

0.2

0.0

 = 300 ns
TiO 2(110)0.2

 = 50 ns

0.0
0

1

10
10
Delay Time (ns)102Fig. 2 Time-dependent surface
photovoltage (SPV) shifts. The
SPV shifts were determined bytracing the Ti 2p3/2 peak shifts.

ANALYSIS OF STRUCTURES AND ELECTRONIC STATES OF[ACTIVE-SITE] IN FUNCTIONAL MATERIALS BY MICROSCOPIC
HIGH-RESOLUTION TWO-DIMENSIONAL PHOTOELECTRON
SPECTROSCOPY
Hiroshi Daimon*, Yusuke Hashimoto, Mihee Lee, Shun Fukami, Daichi Tsujikawa, Taisuke
Yoshida, Hiroyuki Matsuda, Munetaka Taguchi*

Graduate School of Materials Science Laboratory, Nara Institute of Science and Technology

The main purpose of our study at BL07LSU is to develop and establish the experimental
methods for structural and electronic states studies by using two-dimensional microscopic
photoelectron diffraction spectroscopy, so-called DELMA [1,3]. We have so far developed atwo-dimensional display-type ellipsoidal mesh analyzer (DELMA), which is composed of awide acceptance angle electrostatic lens (WAAEL) unit, a transfer lens system and a highenergy electron analyzer (VG SCIENTA R4000) at SPring-8 BL07LSU [1]. DELMA is aphotoelectron spectroscopy device that has the photoelectron emission microscope function,
spatial resolution about 100 μm now, which allows us to measure two dimensional
photoelectron intensity angular distribution (2D-PIAD) of the individual small regions in thesample microscopically. The acceptance angle of the photoelectron angular distribution
pattern is ±45°, and the total energy resolution E/E of DELMA combined with a concentrichemispherical analyzer is 0.2% at kinetic energy around 700 eV.
In 2015A beam-time, we have measured the photoelectron diffraction of Ir doped
LaAlO3/SrTiO3 (LAO/STO) interface. The interface of transition metal oxide shows thevarious interesting physical properties of the electric conductivity, superconductivity and theferromagnetism. The observation of a metallic conductivity between two insulating perovskite
type oxides, especially LAO/STO, has enhanced the potential of oxides for electronics [4].
LAO and STO is wide-gap insulator, however these interface shows metallic conductivity. It
is expected as environmental low load type high electron mobility transistor (HEMT) insteadof the conventional As compound. On the other hand, the 5d transition metal oxides attract
much interest for novel properties arising from the interplay between strong spin-orbit
interaction and electronic correlation. These materials, which include the Ir oxides, areexpected to act as topological insulators [5], [6]. The present study aims to investigate effectof doped Ir on metallic conductivity at STO/LAO interface and find out the mechanism of thephenomenon by analysis of electric state and structure.
LAO/STO and Ir doped LAO/STO interface were grown by Pulsed Laser Deposition (PLD)
using a single crystal LaAlO3, IrO2 and Ir doped SrTiO3 targets on STO (001) single crystal
substrates. 2D-PES measurements were performed at the free port of BL07LSU in SPring-8.
The DELMA combined with an energy analyser (VG SCIENTA R4000) was used to obtain
two dimensional photoelectron intensity distribution (2D-PIAD) patterns. Figure 1 show
2D-PIAD patterns of Sr 3d, Ti 2p, O 1s, La 4p, Al 2p, and Ir 4f in 1% Ir doped STO/LAO,
respectively. Each pattern shows 4-fold symmetry, consistent with the tetragonal crystal
structure of STO/LAO. From Fig. 1, we clearly see that La 4d and Sr 3d PIAD patterns arequite similar, but O 1s PIAD patterns is different from them, suggesting the difference of thelocal atomic structure between O atom and other atoms, while we could not observe the Ti 2p
PIAD. Figure 1 also shows that the doped Ir 4f PIAD pattern is similar to that of Sr 3d pattern,which suggests that the Ir atom will be substituted in Sr site. The observation of doped Ir 4f
PIAD strongly suggest that the local structure information on the dopant site will be
successfully obtained by DELMA.

Figure １ The measured photoelectron diffraction patterns for Sr 3d, Ti 2p, O 1s, La 4p andAl 2p and Ir 4f.

ACKNOWLEDGMENT
This work was supported by KAKENHI (Grants No. 26105001).
REFERENCES[1] L. Tóth, et al., J. Vac. Soc. Jpn. 51, 135 (2008).
[2] K. Goto, et al., e-J. Surf. Sci. Nanotech. 9, 311-314 (2011).
[3] L. Toth, et al., Nucl. Inst. Meth. Phys. Research Sec. A 661, 98-105 (2012).
[4] A. Ohtomo et al., Nature 427, 423 (2004).
[5] B. J. Kim et al., Phys. Rev. Lett. 101, 076402 (2008).
[6] D. Xiao et al., Nat. Commun. 2, 596 (2011).
[4] M. Taguchi et al., Phys. Rev. Letts. 100, 206401 (2008).

RIXS of α-Fe2O3 in magnetic field
J. Miyawaki1,2, S. Suga3, H. Fujiwara4, H. Niwa1,2, H. Kiuchi5 and Y. Harada1,2
1

2

The Institute for Solid State Physics (ISSP), The University of Tokyo, Japan,
Synchrotron Radiation Research Organization, The University of Tokyo, Japan,
3
Institute of Scientific & Industrial Research, Osaka University, Osaka, Japan,
4
Graduate School of Engineering Science, Osaka University, Osaka, Japan,
5
Department of Applied Chemistry, The University of Tokyo

Dzyaloshinskii-Moriya (DM) interaction, which is originated from spatial inversion
symmetry breaking, plays an important role in the magnetoelectric-effect of mutiferroic
materials and both experimental and theoretical studies have been intensively carried out.
Typical weak ferromagnetic material, α-Fe2O3 has the corundum structure and is an
antiferromagnet: Below the Morin temperature (TM), spin moments align along [111] directionof the rhombohedral lattice, while above TM the (spin) moments show spin reorientation to thebasal plane and are slightly canted due to DM interaction, resulting in weak ferromagnetism.
In this study, magnetic circular dichroism (MCD) in Fe L-edge soft x-ray resonant inelastic
x-ray scattering (SX-RIXS) of α-Fe2O3(111) single crystal was measured at room temperature(RT) to identify the electronic structure and mechanism inducing weak ferromagnetism.
SX-RIXS spectra were obtained at ultrahigh-resolution soft x-ray emission spectroscopy
station at BL07LSU in SPring-8 [1,2] where a measurement system for MCD in SX-RIXS has
been developed. Magnetic fields of ~0.25 T can be applied to a sample placed at the center ofthe magnetic poles. The magnet can be rotated around the axis perpendicular to the x-ray
scattering plane, and SX-RIXS can be obtained by applying the magnetic field parallel and 45
degrees to the incident x-ray. A dedicated sample stage was designed to be as small as
possible to allow RIXS measurements at arbitrary incident angles by rotating the stage
between the magnetic poles. MCD in RIXS was measured at RT with grazing incidence (10degree from the sample surface) and the magnetic field was set parallel to the incident x-ray.
Figure 1 shows (a) Fe L3,2-edge x-ray absorption spectroscopy (XAS) and (b) SX-RIXS in
magnetic field at hv = 713.25 eV with left and right circular polarizations (LCP and RCP) of
α-Fe2O3. The XAS spectrum shows good agreement with previous experimental results andcalculations [3,4]. Because total magnetic moment of α-Fe2O3 is too small for MCD in XAS
to detect, any discernible MCD in XAS was not observed. Ultrahigh energy resolution
enabled us to distinguish 1.3 and 1.8 eV inelastic components, corresponding to dd transitionof 6A1g→4T1g and 6A1g→4T2g [5,6]. Circular polarization dependence of RIXS was observed
only at 1.8 eV energy loss and was confirmed as MCD by the reverse of the sample
magnetization. The MCD in RIXS was not observed main peaks in XAS of hv = 708.2 eV and
709.8 eV. The shoulder peak at hv = 713.25 eV in XAS is attributed to charge transfer
transition. Although MCD in XAS was not observed, MCD in RIXS was only observed at
hv = 713.25 eV. These results suggests that coordinated oxygen atoms plays a significant rolein the RIXS intermediate process and induces MCD in RIXS.

Intensity (arb. units)(a)hv=713.25 eV

705 710 715 720 725 730
Photon Energy (eV)(b)
RCPIntensity (arb. units)

LCP
Difference

x4

x4

2

x-ray

x-ray

1
0
Energy Loss (eV)Fig. 1 Fe L-edge XAS and MCD in RIXS of α-Fe2O3. (a) Fe L3,2-edge XAS measured
in TEY. (b) Fe 2p RIXS measured at hν = 713.25 eV using left and right circularly
polarized x-rays. Sketch depicts the experimental configuration; arrows in therectangles represent the directions of the magnetization.

REFERENCES[1] Y. Harada et al., Rev. Sci. Instrum. 83, 013116 (2012).
[2] S. Yamamoto et al., J. Synchrotron Rad. 21, 352 (2014).
[3] P. Kuiper et al., Phys. Rev. Lett. 70, 1549 (1993)[4] H. Kurata et al., J. Electron Microsc. 47 293 (1998).
[5] L. A. Marusak et al., J. Phys. Chem. Solids 41, 981 (1980)[6] A. I. Galuza et al., Low Temp. Phys. 24, 716 (1998).

CO2 ADSORPTION ON THE OXYGEN-MODIFIED EPITAXIAL
GRAPHENE SURFACE AT NEAR AMBIENT CONDITIONS
Susumu Yamamoto1, Kaori Takeuchi1, Ro-Ya Liu1, Yuichiro Shiozawa1, Takanori Koitaya1,
Takashi Someya1, Keiichiro Tashima2, Hirokazu Fukidome2, Kozo Mukai1,
Shinya Yoshimoto1, Maki Suemitsu2, Jun Yoshinobu1, Iwao Matsuda1
1
2

The Institute for Solid State Physics, The University of Tokyo

Research Institute of Electrical Communication, Tohoku University

Introduction
Graphene, a two dimensional honeycomb lattice of carbon atoms, has great promise in awide range of applications including electronic devices, sensors, energy storage, and catalysis,
because of its exceptional electrical, optical, mechanical, and chemical properties. However,pristine graphene shows limitations in its direct use in these applications. For example,
graphene is a zero band-gap material although semiconducting character with band-gap isrequired for device applications. In addition, pristine graphene is a chemically inert material,
which shows weak interactions with adsorbed molecules. In order to overcome theselimitations, significant efforts have been dedicated to control the electronic and chemical
properties of graphene by a chemical modification or functionalization of the graphenesurface.
Adsorption of molecules on the functionalized graphene is fundamentally important because
adsorbed molecules on the graphene devices working at ambient conditions can have a large
influence on their performances. In catalyst applications, graphene serves as catalysis or
catalysis support. It is important to reveal the adsorption and chemical reactions of moleculeson the graphene surface at the working conditions of catalysts. Despite of importance,
however, experimental approach to clarify the interaction of adsorbed molecules with thefunctionalized graphene is quite limited. Especially, it has been challenging to experimentally
study the graphene surface at ambient conditions where the devices and the catalysts areoperated. Recent development of ambient pressure X-ray photoelectron spectroscopy(AP-XPS) allows one to investigate the electronic and chemical states of adsorbate andsubstrate under gas atmosphere of near ambient pressure.
In this study, the adsorption of CO2 with the oxygen-modified graphene surface was studied
at near ambient conditions using AP-XPS. We found that the oxygen-modification ofgraphene enhances the adsorption energy of CO2.
Experimental method
The experiments were performed at the soft X-ray undulator beamline BL07LSU at
SPring-8. The graphene sample used in this study was monolayer epitaxial graphene grown
on a 6H-SiC(0001) substrate. The graphene surface was cleaned by annealing at 773 K for 30
min in UHV to remove surface contaminants, and the surface cleanness was confirmed by C
1s and O1s XPS spectra. The oxygen-modified graphene was prepared in-situ by
photo-induced dissociation of CO2 on graphene with strong synchrotron X-ray. XPS
measurements at near ambient pressures were carried out using an AP-XPS apparatus thatcombines a differentially pumped electron analyzer (SPECS, PHOIBOS 150 NAP) with anambient-pressure gas cell. The details of the AP-XPS apparatus can be found in our previous
publication [1].

Results and discussion
First the adsorption of CO2 on the pristine
epitaxial graphene surface at near ambientconditions was studied using AP-XPS. Figures
1(a) and (b) show C 1s and O 1s XPS spectra ofgraphene measured in p(CO2)= 1.5 mbar at 177
K. The main C 1s peak at 284.8 eV binding
energy (BE) is assigned to graphene; theshoulder feature at 283.8 eV is ascribed to the
SiC substrate. Peaks at 293.5 eV in C 1s and536.9 eV in O 1s XPS spectra originate fromgas-phase CO2. However, no adsorbate wasobserved on the graphene surface under thepresent condition.
Next the adsorption of CO2 on the
Figure 1. (a, b) C 1s and O 1s XPS spectraof graphene measured in 1.5 mbar CO2 atoxygen-modified epitaxial graphene surface was
177 K. (c, d) C 1s and O 1s XPS spectra ofstudied at near ambient conditions. Figures 1(c)the oxygen-modified graphene measured inand (d) show C 1s and O 1s XPS spectra of the
1.6 mbar CO2 at 175 K. (e, f) C 1s and O
oxygen-modified graphene surface measured in
1s XPS spectra of the oxygen-modifiedp(CO2)= 1.6 mbar at 175 K. In contrast to thegraphene measured in ultrahigh vacuum atpristine graphene surface, new small peaks are
199 K after evacuating 1.6 mbar CO2. The
observed at 291.2 eV in C 1s and at 534.7 eV inincident photon energy was 740 eV.
O 1s XPS spectra. The BEs are in good
agreement with those of the physisorbed CO2 on the graphene/SiC(0001) in UHV and at 30
K: 290.6-291.3 eV in C 1s and at 534.6-535.0 eV in O 1s XPS [2] . It is thus suggested thatthe adsorption of CO2 on the epitaxial graphene at near ambient conditions is classified into
physisorption as in UHV at 30 K. In addition to adsorbed CO2 peaks, extra peaks are observed
at 532.0 eV in O 1s and 286.7 eV in C 1s XPS spectra. The peak positions are in good
agreement with the previously reported epoxide species on graphene [3]. Figures 1(e) and (f)show C 1s and O 1s XPS spectra measured in UHV after evacuating CO2 gas atmosphere.
After gas evacuation, adsorbed CO2 as well as gas-phase CO2 are not observed. Therefore,
CO2 molecules on the oxygen-modified graphene surface are only present at near ambientconditions.
In conclusion, the adsorption of CO2 with the oxygen-modified graphene surface wasinvestigated at near ambient conditions using AP-XPS. The oxygen modification of graphene
was achieved in-situ by photo-induced dissociation of CO2 with strong synchrotron X-ray.
The oxygen-species on the graphene surface is ascribed to epoxide. Under near ambientconditions of 1.6 mbar CO2 gas pressure and 175 K sample temperature, no CO2 adsorption isobserved on the pristine graphene, but CO2 adsorption is observed on the oxygen-modified
graphene surface. Therefore, the oxygen-modification of graphene enhances the adsorptionenergy of CO2. The results of the present study may present the guideline of novel
graphene-based catalysts design; the adsorption of reactant molecules should be increased by
the functionalization of the graphene surface.
REFERENCES[1] T. Koitaya et al., Topics in Catalysis 59, 526 (2016).
[2] K. Takeuchi et al., submitted (2016).
[3] Md. Z. Hossain et al., Nature Chemistry 4, 305 (2012).

ACTIVATION OF CARBON DIOXIDE ON Zn-DEPOSITED Cu
SURFACES STUDIED BY AMBIENT-PRESSURE X-RAY
PHOTOELECTRON SPECTROSCOPY
Yuichiro Shiozawa, Takanori Koitaya, Susumu Yamamoto, Kaori Takeuchi, Ro-Ya Liu,
Kozo Mukai, Shinya Yoshimoto, Yuki Yoshikura, Iwao Matsuda, and Jun Yoshinobu**
The Institute for Solid State Physics, The University of Tokyo
Activation of CO2 is an important reaction step in the use of CO2 as a chemical feedstock[1, 2]. So far, methanol synthesis on a Cu/ZnO catalyst has been one of the most promising
reactions for the CO2 utilization [3]. It has been proposed that an active site on the Cu/ZnO
catalyst is a Zn-Cu surface alloy formed by diffusion of Zn atoms to metallic copper [4]. A
recent study has suggested that a step site on the Cu surface decorated with Zn is highly
reactive for the methanol synthesis [5]. However, the reaction mechanism and kinetics of CO2
on the Zn-Cu alloy surface are not fully understood yet. In this study, we investigated thereaction process of CO2 on the Zn-deposited Cu(111) and Cu(997) surfaces at 373 K using
ambient pressure X-ray photoelectron spectroscopy (AP-XPS).
AP-XPS is a powerful tool for investigating electronic structures and chemical states ofadsorbates and substrates under reactant-gas atmosphere. We have constructed the ambientpressure X-ray photoelectron spectroscopy system at the “free-port” of the soft X-ray
undulator beamline BL07LSU of SPring-8. Details of the system are described elsewhere [6].
Briefly, the AP-XPS system consists of four interconnected UHV chambers; an analysis
chamber, a preparation chamber, a load-lock chamber, and a fast-entry chamber. The analysis
chamber is used for XPS measurements both in UHV and at ambient conditions using a
gas-cell. The preparation chamber is equipped with an ion source and low energy electron
diffraction (LEED) optics. The load-lock chamber and the fast-entry chamber allow the
introduction of samples from the air into the UHV system.
Figure 1 shows a series of C 1s AP-XPS spectra on (a) Zn(0.31 ML)/Cu(111) and (b)Zn(0.40 ML)/Cu(997) at 373 K under (CO2 + H2) gas mixture (total pressure of 1.2 mbar) as afunction of elapsed time. CO2 gas (0.8 mbar) was introduced in the gas cell at t = 0 s, and thenH2 gas (0.4 mbar) was added.

Figure 1 A series of C 1s AP-XPS spectra of (a) Zn(0.31 ML)/Cu(111) and (b) Zn(0.40
ML)/Cu(997) at 373 K under (CO2 + H2) gas mixture (total pressure of 1.2 mbar) as a functionof elapsed time. The photon energy was 630 eV. CO2 gas (0.8 mbar) was introduced in the gas
cell at t = 0 s, and then H2 gas (0.4 mbar) was added to the gas cell.

Peaks at 293 eV and 285 eV are assigned to gas-phase CO2 and neutral carbon species (C0),respectively. Τhe peak at 289.9 eV (αc in Fig. 1) is assigned to carbonate (CO3) formed fromCO2 by following reactions,
CO2 ! CO(gas) + O,
(1)
O + CO2 ! CO3.
(2)
Hydrogenation products such as formate(HCOO) and methoxy (CH3O) species were
not detected under the present reaction
conditions.
As seen in Fig. 1, the formation of CO3 isfaster on Zn-Cu(997) than on Zn-Cu(111),
indicating a stepped surface is more reactive
than a flat surface. Figure 2 shows CO3
coverages as a function of elapsed reaction
time. From linear fitting of the uptake curves,(initial) CO3 formation rates were estimatedto be 9.1 × 10-6 ML/s on Zn-Cu(111) and 1.8
× 10-5 ML/s on Zn-Cu(997), respectively.
These values correspond to very small CO3
formation probabilities per one CO2 collision:
4.9 × 10-11 (9.4 × 10-11) on Zn-Cu(111)(Zn-Cu(997)). Such rare reaction can be
Figure 2 CO3 coverage on Zn-Cu(111) (■)
detectable only in the near-ambient condition
and Zn-Cu(997) (□) as a function of elapsed
using the operand techniques. Note that thetime. Reaction rates were roughly estimatedestimated CO3 formation probabilities arefrom linear fitting of the uptake curves.
similar to the dissociation probability of CO2-11
on Cu(110) at 450 K (~ 10 per collision) [7],indicating that the CO2 dissociation (1) is a
rate-limiting step for the CO3 formation.

REFERENCES[1] A. Dibenedetto, A. Angelini, P. Stufano, “Use of carbon dioxide as feedstock for chemicals andfuels: homogeneous and heterogeneous catalysis” J. Chem. Technol. Biotechnol. 89, 334-353(2014).
[2] M. Aresta, “Carbon dioxide as chemical feedstock” (Wiley-VCH, Weinheim, 2010).
[3] G. A. Olah, A. Goeppert, G. K. Surya Prakash, “Beyond oil and gas: The methanol economy”(Wiley-VCH, Weinheim, 2009).
[4] J. Nakamura, Y. Choi, and T. Fujitani, “On the issue of the active site and the role of ZnO in
Cu/ZnO methanol synthesis catalysts” Top. Catal. 22, 277-285 (2003).
[5] M. Behrens et al., “The Active Site of Methanol Synthesis over Cu/ZnO/Al2O3 Industrial
Catalysts” Science 336, 893-897 (2012).
[6] T. Koitaya, S. Yamamoto, Y. Shiozawa, K. Takeuchi, R.Y. Liu, K. Mukai, S. Yoshimoto, K.
Akikubo, I. Matsuda, and J. Yoshinobu "Real-time observation of reaction processes of CO2 on
Cu(997) by ambient-pressure X-ray photoelectron spectroscopy" Top. Catal. 59, 526-531 (2016).
[7] J. Nakamura, J. A. Rodriguez and C. T. Campbell “Does CO2 dissociatively adsorb on Cu
surfaces?” J. Phys.: Condens. Matter 1, SB149-SB160 (1989).

REVEALING ROOM-TEMPERATURE FERROMAGNETISM OF
ZnSnAs2: Mn THIN FILMS BY ATOMIC AND MAGNETICSTRUCTURE ANALYSIS BASED ON PHOTOELECTRONHOLOGRAPHY AND SITE-SELECTIVE XPS MEASUREMENTS
Naotaka Uchitomi1, Masaki Ogo1, Yusuke Hashimoto2, Mihee Lee2, Shun Fukami2, Daichi
Tsujikawa2, Taisuke Yoshida2, Hiroyuki Matsuda2, Munetaka Taguchi2, and Hiroshi Daimon2
1
2

Department of Electrical Engineering, Nagaoka University of Technology, Niigata, Japan

Graduate School of Materials Science Laboratory, Nara Institute of Science and Technology

During the last two decades, III-V based diluted magnetic semiconductors (DMSs), as well
as recently developed ferromagnetic metals, have attracted much attention for use in
spintronic devices and as candidates for beyond-CMOS technology. In particularly, GaMnAs
has been extensively studied from experimental and theoretical points of view. This isbecause of well lattice-matching with GaAs substrates and a high Curie temperature of morethan 100 K [1-4]. Thus, GaMnAs is a promising candidate for producing semiconductor
spintronic devices. On the other hands, II-IV-V2 chalcopyrite semiconductors such as
CdGeP2[5], CdGeAs2[6] and ZnSnAs2[7-8] are alternative ferromagnetic semiconductor,
which have been shown to become ferromagnetic by Mn doping, and have Curie temperatureshigher than 300 K. In particularly, a bulk-type Mn doped ZnSnAs2 crystal has been
experimentally shown to be ferromagnetic at a high Curie temperature [7]. The magnetic Mnion, which occupies the cation IV site in host chalcopyrite or zinc-blende (sphalerite)
structures, has a local spin moment and acts as an acceptor at the same time.
Very recently, ZnSnAs2: Mn thin films have been epitaxially grown on InP (001) without
any secondary phases, and have shown room-temperature ferromagnetism [8-10]. ZnSnAs2
would be regarded as a “vertical GaAs” to some extent experimentally and theoretically,
consisting of two interposing zinc-blende lattices, while permitting a high degree of Mn
incorporation because Mn2+ ions may easily substitute on the group II Zn sites. The ZnSnAs2
thin films grown by molecular beam epitaxy (MBE) tend to show zinc-blende structure rather
than chalcopyrite structure, which is analogous to the GaAs zinc-blende structure with Ga
atoms being randomly replaced with either a Zn or Sn atom. As a results, the ternarycompound ZnSnAs2 grown by MBE is referred to as zinc-blende ZnSnAs2. On the basis of thepresent results, this material has the potential to produce InP-based spintronic devices, forwhich the lattice-matched III-V semiconductors InGaAs and InAlAs are expected to makepossible magnetic quantum-well structures. However, the state of research and developmentof ferromagnetic II-IV-V2 chalcopyrite semiconductors is still under debate, and basic
information is still not available on the parameters needed for spintronic device application.
In 2015A beam-time, we have measured the photoelectron diffraction of Mn doped
ZnSnAs2. 2D-PES measurements were performed at the free port of BL07LSU in SPring-8.
The DELMA combined with an energy analyser (VG SCIENTA R4000) was used to obtain
two dimensional photoelectron intensity distribution (2D-PIAD) patterns and also
conventional angle integrated core-level x-ray photoemission spectra. DELMA is aphotoelectron spectroscopy device that has the photoelectron emission microscope function,
spatial resolution about 100 μm now, which allows us to measure two dimensional
photoelectron intensity angular distribution (2D-PIAD) of the individual small regions in thesample microscopically. Figure 1 shows a measured 2D-PIAD patterns of doped Mn in
ZnSnAs2. Unfortunately, no visible PAID pattern of dopant Mn site is detected, probably due

to the low doping concentration of Mn. However, as shown in Fig.2, we observed the angle
integrated XPS spectrum of Mn 2p, in which the spectral shape is quite similar to Mn2+
spectrum such as MnO[11]. This suggest that the valency of Mn atom is 2+.

Figure 1: 2D-PIAD pattern of Mn 2p

Figure 2: Mn 2p XPS spectrum

ACKNOWLEDGMENT
This work was supported by KAKENHI (Grants No. 26105001).
REFERENCES[1] H. Ohno, Science 281, 951 (1998)..
[2] T. Jungwirth, et al., Rev. Mod. Phys. 78, 809 (2006).
[3] T. Dietl, H. Oono, F. Matsukura, Phys. Rev. B 63, 195205 (2001).
[4] S. Sato, M. A. Osman, Y. Jinbo, N. Uchitomi, Appl. Surf. Sci. 242, 134 (2005).
[5] G. A. Medvedkin, et al., Jpn. J. Appl. Phys. 39, L949 (2000).
[6] R. Demin, et al., J. Magn. Magn. Matter. 290-291, 1379 (2005).
[7] S. Choi, et al., Solid State Commun. 122, 165 (2002).
[8] J.T. Asubar, Y. Jinbo, N. Uchitomi, J. Cryst. Growth 311, 929 (2009).
[9] N. Uchitomi, H. Oomae, J. T. Asubar, H. Endo, Y. Jinbo, Jpn. J. Appl. Phys. 50, 05FB02 (2011).
[10] H. Oomae, J. T. Asubar, Y. Jinbo, N. Uchitomi, Jpn. J. Appl. Phys. 50, 01BE12 (2011).
[11] M. Taguchi et al., J. Phys. Soc. Jpn. 66, 247 (1997).

Co 2p-3d-2p RESONANT X-RAY EMISSION SPECTRUM OF LaCoO3
BELOW ROOM TEMPERATURE
Yukihiro Taguchi,1 Kengo Kashiwagi,1 Masakazu Hamada,1 Shuichi Kawamata,1Takayuki Uozumi,1 Kojiro Mimura,1 Atsushi Hariki,2 Jun Miyawaki,3 and Yoshihisa Harada3
1

2
3

Graduate School of Engineering, Osaka Prefecture University,

Institute of Physics, Academy of Sciences of the Czech Republic,

Synchrotron Radiation Laboratory, The Institute for Solid State Physics, The University of Tokyo

The ground state of Co ions in LaCoO3 is a nonmagnetic low-spin (LS, t2g6) state with S=0.
With increasing temperature LaCoO3 undergoes a gradual non-to-paramagnetic transition andexhibits a maximum around 100 K in the χ-T curve. Since a model where a high-spin (HS, t2g4eg2) state with S=2 is uniformly excited gives much higher magnetic susceptibility than thatobserved in the experiments, proposed has been a model where an intermediate-spin (IS, t2g5eg1) state with S=1 is excited below room temperature [1]. So far extensive studies have been
carried out to identify the excited spin-state involved in the transition of LaCoO3 around 100 K.
Some studies support the LS-to-HS model [2], others the LS-to-IS or LS-to-IS and HS model[1]. It is expected that the different spin-states give different electronic-structure from eachother, because the different spin-states arise from different configurations of the Co 3d electrons.
However, x-ray absorption and photoemission spectra of LaCoO3 do not show significant
temperature dependence below room temperature [1,2]. Since it is expected that the dd
excitations of the Co 3d electrons are sensitive to the change in the spin state of LaCoO3, we
performed Co 2p-3d-2p resonant x-ray emission spectroscopy, or resonant inelastic x-ray
scattering experiment for LaCoO3 to observe the change in the dd excitations through the 100K transition. Although the difference between the spectra at 40 and 300 K due to the spin-statetransition was clearly observed, it was not possible to identify the excited spin-state definitely
because of low energy-resolution of the spectra and rather large contribution from fluorescentlike feature which shows spectral shape like that in the Co 3d-2p normal emission [3]. The soft
x-ray emission spectrometer and the light source have been remarkably improved in recent
years [4]. We have performed the same experiment with the new experimental setup.
The Co 2p-3d-2p x-ray emission experiments were carried out by using the soft x-ray
emission spectrometer constructed at the BL07LSU beamline of SPring-8 [4]. The overall
energy resolution was 0.34 eV. Sample used was single-crystalline LaCoO3 and was fractured
in situ before the experiments. The sample temperature was set from 40 to 300 K.
Figure 1 shows the Co 2p-3d-2p resonant x-ray emission spectra for LaCoO3 at 40 (bluecurve) and 300 K (red) in the depolarized configuration [5]. The excitation energy was set at
4.5 eV higher than the Co L3 absorption peak to separate the fluorescent-like feature from theelectronic-Raman feature. The former is seen from around 4 eV to higher Raman-shift side andthe latter below 4 eV in Fig. 1. It was difficult in our previous experiment to take the spectrumwith sufficient signal-to-noise ratio for excitation energies in the region where photoabsorption
signal is rather weak. As was observed in the previous study, the elastic scattering at 0 eV isseen in the 300-K spectrum, whereas it is absent in the 40-K spectrum. This indicates that the
spin state(s) other than the LS state are thermally excited at 300 K whereas almost all Co ionsat 40 K is in the LS state. The elastic scattering is forbidden for the totally symmetric LS (1A1)state in the depolarized configuration [5]. In addition, the peak of fluorescent-like featurearound 7 eV is somewhat broadened with increasing temperature. The fluorescent-like emission
is nearly independent of the photoexcited electron. In other words, it goes through theintermediate state similar to the final state of the Co 2p x-ray photoemission. The Co 2p
photoemission is broadened with increasing temperature because the thermally excited spinstate opens up the non-local screening channel [6]. The increase in population of the IS or HS
states may be responsible for the temperature-induced broadening of the fluorescent-like feature.

Two Raman peaks are seen at 0.75 and 1.35 eV in the 40-K spectrum. These are in agreementwith two peaks at 0.8 and 1.5 eV in the calculated spectrum for LaCoO3 in the LS state by using
a dp model simulating Co 3d and O 2p orbitals by means of a dynamical mean-field approach
under the perovskite crystal structure [7]. The calculation has been carried out for the
depolarized configuration with the excitation energies corresponding to distinctive features in
the Co L3 absorption of LaCoO3. It shows that the positions of the Raman peaks below 3 eVchanges little by varying the excitation energy, although the relative intensity among the peaks
changes significantly. The calculated spectrum for LaCoO3 in the HS state exhibits two peaks
at 0 and 1.2 eV. These also agree with the observed peaks at 0 and around 1 eV in the 300-K
spectrum. The calculation for the HS state predicts that a feature resulting from the non-local
screening appears between the two peaks. A shoulder at 0.6 eV in the 300-K spectrum may berelated to the predicted feature.
To summarize, we have observed the change in the Co 2p-3d-2p resonant x-ray emission
spectrum of LaCoO3 through the gradual magnetic transition below room temperature. The
results are consistent with the low-to-high spin model for the transition.
REFERENCES[1] T. Saitoh et al., Phys. Rev. B 55 (1997) 4257.
[2] M. W. Haverkort et al., Phys. Rev. Lett. 97 (2006) 176405.
[3] Y. Taguchi et al., Surf. Rev. Lett. 9 (2002) 871.
[4] Y. Harada et al., Rev. Sci. Instrum. 83 (2012) 013116.
[5] M. Matsubara et al., J. Phys. Soc. Jpn. 69 (2000) 1558.
[6] A. Hariki et al., J. Phys. Soc. Jpn. 84 (2015) 073706.
[7] A. Hariki, A. Yamanaka and T. Uozumi, unpublished.

Fig. 1. Co 2p-3d-2p resonant x-ray emission spectra for LaCoO3 in the depolarized
configuration at 40 (blue curve) and 300 K (red).

Improvement of operando cell of LiCoO2 cathode for the Co 2p soft x-ray
emission spectroscopy
Daisuke Asakura1, Eiji Hosono1, Hideharu Niwa2,3, Hisao Kiuchi4, Jun Miyawaki2,3,
and Yoshihisa Harada2,3
1

Research Institute for Energy Conservation, National Institute of Advanced Industrial Science andTechnology
2Institute for Solid State Physics, The University of Tokyo

3

Synchrotron Radiation Research Organization, The University of Tokyo
4

Department of Applied Chemistry, The University of Tokyo

To understand the electrochemical performances of electrode materials for Li-ion batteries(LIBs), characterizations of the chemical and physical properties are of particular importance.
Electron spectroscopy at synchrotron facilities, such as X-ray absorption, is the mostpromising technique to reveal the electronic structure. Recently, electronic-structure analyses
for the electrode materials using soft x-ray spectroscopy have been highly attractive because
the 3d orbital of transition metals can be clarified directly.
We have successfully performed operando soft x-ray emission spectroscopy (XES) for
LiMn2O41. The operando cell consisted of the LiMn2O4 thin-film cathode, a Li-metal counterelectrode and an organic electrolyte solution. The operando XES experiments were carriedout using ultrahigh-resolution x-ray emission spectrometer, HORNET2 at BL07LSU ofSPring-8.
Then, we have been applying the same method to other typical electrode materials. We have
tried to make LiCoO2 thin-film cathode for Co 2p operando XES. However, the results ofcyclic voltammetry and XES have indicated insufficient charge-discharge reactions possibly
due to a high resistivity in the operando cell3. In order to reduce the resistivity, we slightly
modified the thin-film structure: Si3N4 (150 nm)/Al2O3 (5 nm)/Ti (20 nm)/Au (15nm)/LiCoO2 from the vacuum side to electrolyte side. The Al2O3 layer and Ti/Au multilayer
were fabricated by RF sputtering andelectron-beam deposition, respectively.
The LiCoO2 layer was fabricated bysol-gel method. The thickness of
LiCoO2 thin-film was estimated to beabout 50 nm from a result of scanningelectron microscopy. Although theprocesses are similar to those forprevious case, the 15-nm thick Au
layer and a shorter heating time forfabrication of LiCoO2 are effective tomaintain a low resistivity (~10 ) on
the Au current collector. Figure 1
shows the cyclic voltammetry (CV)curves of the LiCoO2 thin film with theoperando cell. The cathodic and anodic
peaks evidence a charge-discharge Fig. 1. CV curves of LiCoO2 thin film withreaction of LiCoO24.
operando cell. The scan speed was 0.5 mV/s.
However, unfortunately, the thin-filmwindow was broken at the vacuum
pumping. Instead, Co 2p ex situ XES
measurements for the LiCoO2 thin films
were carried out. Figure 2 shows the exsitu XES results in the case of excitationenergy of 779.4 eV. In going to thecharged state, the XES profile slightly
changed compared to the initial state,while the XES for the discharged state
was almost the same as that for the
charged state. Similar tendencies were
found for the results with the otherexcitation energies. Most likely, these Fig. 2. Co 2p ex situ XES for the LiCoO2 thinresults would be due to the ex situ film. The samples were taken from beaker cells
condition. For the LiCoO2 thin film after the charge/discharge treatments andhaving a layered structure, the charged prepared under an ex situ condition.
state should be unstable unlike
spinel-type LiMn2O4 and olivine-type LiFePO4. Now, we are making the window area smaller
to avoid the break of the window. In the near future, we will be able to perform the operando
XES using the improved LiCoO2 thin film.

References[1] D. Asakura et al., Electrochem. Commun. 50, 93 (2015).
[2] Y. Harada et al., Rev. Sci. Instrum. 83, 013116 (2012).
[3] D. Asakura et al., ISSP Activity Report of Synchrotron Radiation Laboratory 2014.
[4] D. Takamatsu et al., Angew. Chem. Int. Ed. 51, 11597 (2012).

Magnetic Circular Dichroism in RIXS of weak ferromagnet α-Fe2O3
J. Miyawaki1,2, S. Suga3, H. Fujiwara4, H. Niwa1,2, H. Kiuchi5 and Y. Harada1,2
1

2

The Institute for Solid State Physics (ISSP), The University of Tokyo, Japan,
Synchrotron Radiation Research Organization, The University of Tokyo, Japan,
3
Institute of Scientific & Industrial Research, Osaka University, Osaka, Japan,
4
Graduate School of Engineering Science, Osaka University, Osaka, Japan,
5
Department of Applied Chemistry, The University of Tokyo

Typical weak ferromagnetic material, α-Fe2O3 has the corundum structure and is an
antiferromagnet: Below the Morin temperature (TM), spin moments align along [111] directionof the rhombohedral lattice, while above TM the (spin) moments show spin reorientation to thebasal plane and are slightly canted due to Dzyaloshinskii-Moriya interaction, resulting in
weak ferromagnetism. In this study, magnetic circular dichroism (MCD) in Fe L-edge soft
x-ray resonant inelastic x-ray scattering (SX-RIXS) of α-Fe2O3(111) single crystal wasmeasured at room temperature (RT) to identify the electronic structure and mechanism
inducing weak ferromagnetism.
SX-RIXS experiments were carried out at ultrahigh-resolution soft x-ray emission
spectroscopy station at BL07LSU in SPring-8 [1,2] where a measurement system for MCD in
SX-RIXS has been developed. Magnetic fields of ~0.25 T can be applied to a sample placedat the center of the magnetic poles. The magnet can be rotated around the axis perpendicular
to the x-ray scattering plane, and SX-RIXS can be obtained by applying the magnetic fieldparallel and 45 degrees to the incident X-ray. A dedicated sample stage was designed to be as
small as possible to allow RIXS measurements at arbitrary incident angles by rotating thestage between the magnetic poles. MCD in RIXS was measured at RT with grazing incidence(10 degree from the sample surface). In order to investigate the crystal orientation dependence,
two different azimuthal angles in the (111) plane were chosen: the incidenty x-ray was paralleland perpendicular to the axis of the rhombohedral lattice. The magnetic field was always set
parallel to the incident x-ray.
Figure 1 shows (a) Fe L3,2-edge x-ray absorption spectroscopy (XAS), (b) excitation energy
dependence of SX-RIXS and (c) MCD in RIXS of α-Fe2O3. The XAS spectrum agrees very
well with previous experimental results and calculations [3,4]. Figure 1(b) exhibits inelastic
components in RIXS at 1–6 eV loss energy, which are assigned to dd transition (6A1g→4T1g
and 6A1g→4T2g), spin flip and charge transfer transition according to previous opticalabsorption experiments and calculations [5,6]. Selected MCD in RIXS at 1–2 eV are shown in
Fig. 1(c). MCD in RIXS was not at all detected for the main peak (5) excitation of L3-edge
XAS and was observed only at 1.8 eV loss energy and for the excitations abovehν = 713.25 eV, where charge transfer transition contributes substantially. Since any
discernible MCD was not recognized in XAS, the observed MCD in RIXS can be safely
attributed to the RIXS process and was confirmed by ab-initio multiplet calculations.
Moreover, with the incident x-ray parallel to the axis of the rhombohedral lattice, the MCD in
RIXS was not observed at any excitation energies, thus exhibiting the crystal orientation
dependence. These results suggest that the intermediate states in RIXS excited to the chargetransfer transition induce anisotropic MCD in RIXS, indicating the importance of thecoordination of oxygen atoms in the magnetic order.

Fig. 1 Fe L-edge XAS and RIXS with the incident x-ray perpendicular to the axis of therhombohedral lattice. (a) Fe L3,2-edge XAS measured at RT by total electron yield (TEY)mode. (b) The excitation energy dependence of Fe L-edge RIXS. (c) Corresponding MCD
in RIXS. Numbers labeled on RIXS indicate excitation energies shown in (a).

REFERENCES[1] Y. Harada et al., Rev. Sci. Instrum. 83, 013116 (2012).
[2] S. Yamamoto et al., J. Synchrotron Rad. 21, 352 (2014).
[3] P. Kuiper et al., Phys. Rev. Lett. 70, 1549 (1993)[4] H. Kurata et al., J. Electron Microsc. 47 293 (1998).
[5] L. A. Marusak et al., J. Phys. Chem. Solids 41, 981 (1980)[6] A. I. Galuza et al., Low Temp. Phys. 24, 716 (1998).

ANALYSIS OF DOPANT-SITE IN BORON DOPED DIAMOND BY
USING PHOTOELECTRON HOLOGRAPHY
Yukako KATO**

Advanced Power Electronics Research Center, Advanced Industrial Science and Technology

Semiconducting diamond has attracted considerable attention as a moreadvanced-generation material for power devices owing to its ability to perform with highbreakdown characteristics and high carrier mobility in a high-temperature, high-voltage
environment. The latest progress of development of diamond power devices is remarkable.
For example, the reported diamond Schottky barrier diode (SBD) worked stable attemperatures above 200°C[1]. On the other hand, high switching performance under hightemperature was shown[2]. However, there is no achievement report about the highperformance diamond power device based on the ideal material character.
In this study, we will discuss about “active dopant-site in diamond”, because it is known
that the dopant concentration is not same as carrier concentration [3, 4]. One of reasons underdiscussion is relationship between contribution to device performance and dopant site. We
assumed that dopant at substitutional site is worked as accepter. However, there is no data for
discuss about existence of other dopant site.
We analyzed an epitaxial boron-doped diamond grown by plasma-assisted CVD method.
The substrate was a type-Ib single-crystal diamond (001) plate provided by Sumitomo
Electric Industries, Ltd, Japan. The substrate size and thickness were 3 mm × 3 mm and 0.5mm, respectively. The boron concentration was controlled by changing the B/C ratio of thesource gas with trimethylboron (TMB) and methane (CH4) concentration. In this study, The
B/C ratios and CH4 concentrations was 2000 ppm and 0.5%, respectively. The film thickness
was approximately to 1 μm. Boron atomic concentration, 3×1020/cm3, is estimated from SIMS.
By the Hall effect measurement at room temperature, hall coefficient and hall mobility are
3.63×10-4[cm3/C] and 3.85×10-1[cm2/Vs], respectively.
For active-site analysis, photoelectron diffraction pattern has been expected to be a
powerful tool for visualizing local atomic structures around a photoelectron emitter atom[5, 6].
Photoelectron diffraction pattern was observed by using Display-type Ellipsoidal Mesh
Analyzer (DELMA) installed at free-port in BL07LSU. A photoelectron diffraction patterncaused by a scatterer atom has a strong forward focusing peak (FFP) and ring patterns around
it. The scatterer atom located farther away from the emitter atom forms finer ring patterns.
The FFP indicates the direction of the scatterer atom. The fineness of ring patterns indicatesthe atomic distance. Thus, the photoelectron hologram provides an image around aphotoelectron emitter atomic site without requiring any initial model or phase information. It
is possible to assign not only the bulk structure but also the surface structure and the local
impurity structure of the crystal. Therefore, it is a powerful tool for the analysis of atomic
structures. Up to now, much effort has been devoted to the study of atomic resolution
holography using photoelectron [7, 8].
Figure 1a is C1s photoelectron diffraction pattern of boron doped diamond at kinetic energyof 600 eV. A comparison of the observation (fig. 1a) with the computed results (fig. 1b)shows good agreement. Figure 1c is schematic image of diamond unit cell for explain aboutangles and distances between emitter and scatterer. Red atom is one site of emitter 1. Other
colored atoms are scatterer. Emitter and scatterer which are superimposed in Fig.1b as samecolored circle. This calculated photoelectron diffraction pattern was simulated by TMSP withhemispherical atomic cluster shown in fig.1d. TMSP is a simulation program forphotoelectron hologram developed by Dr. T. Matsushita[9]. Hemispherical atomic cluster’ssize radius is about 7Å.

Two-dimensional photoelectron image of B1s is not able to be obtained because S/N may
be too poor to analysis setting parameter.

Fig. 1) Experimental data and calculated data with schematic atomic structure.
(a) Observed C1s photoelectron diffraction pattern. Kinetic energy is set to 600 eV.
(b) Calculated C1s photoelectron diffraction pattern. Superimposed circles mean FFP of photoelectron of eachatomic site shown in fig. 1c.
(c) Schematic image of diamond unit cell for explain about angles and distances between emitter and scatterer.
Red atom is one site of emitter (1). Other colored atoms are scatterer. Scatterer are superimposed in Fig.1b assame colored circle.
(d) Atomic cluster of diamond (001) for the hologram calculation. Red circle is emitter and other circles arescatterer.

ACKNOWLEDGMENT
This work was supported by KAKENHI (Grants No. 15H01056).

REFERENCES[1] H. Umezawa, K. Ikeda, R. Kumaresan, S. Shikata, High Temperature Characteristics of Diamond SBDs.
Mater. Sci. Forum, 645–648 (2010) 1231–1234.
[2] H. Umezawa, S.-i. Shikata, T. Funaki, Diamond Schottky barrier diode for high-temperature, high-power,
and fast switching applications. Japanese Journal of Applied Physics, 53 (2014) 05FP06.
[3] W. Gajewski, P. Achatz, O.A. Williams, K. Haenen, E. Bustarret, M. Stutzmann, J.A. Garrido, Electronic
and optical properties of boron-doped nanocrystalline diamond films. Physical Review B, 79 (2009) 045206.
[4] J.W. Ager III, M.D. Drory, Quantitative measurement of residual biaxial stress by Raman spectroscopy indiamond grown on a Ti alloy by chemical vapor deposition. Phys. Rev. B, 48 (1993) 2601–2607.
[5] T. Matsushita, F. Matsui, K. Goto, T. Matsumoto, H. Daimon, Element Assignment for Three-Dimensional
Atomic Imaging by Photoelectron Holography. Journal of the Physical Society of Japan, 82 (2013) 114005.
[6] H. Daimon, Direct Imaging of Atomic Arrangement by Photoelectron Holography. e-Journal of Surface
Science and Nanotechnology, 10 (2012) 169-174.
[7] F. Matsui, T. Matsushita, H. Daimon, Photoelectron Diffraction and Holographic Reconstruction of Graphite.
Journal of the Physical Society of Japan, 81 (2012) 114604.
[8] M.V. Kuznetsov, I.I. Ogorodnikov, A.S. Vorokh, A.S. Rasinkin, A.N. Titov, Characterization of 1T-TiSe2
surface by means of STM and XPD experiments and model calculations. Surface Science, 606 (2012)
1760-1770.
[9] T. Matsushita, F. Matsui, H. Daimon, K. Hayashi, Photoelectron holography with improved image
reconstruction. Journal of Electron Spectroscopy and Related Phenomena, 178–179 (2010) 195-220.

Monitoring the ferroelectric instability of BaTiO3 by RIXS
1

Fatale Sara, 1Moser Simon and 1Grioni Marco1
Ecole Polytechnique Federale de LausannePurpose of the experiment and summary of the results:
Barium titanate (BaTiO3) is a well-known, technologically important ferroelectric material.
It exhibits a high transition temperature, TC∼130 °C and various structural phases as afunction of temperature [1-2].
Despite the enormous applications of this compound, the microscopic origin of theferroelectricity is complex, calling for combination of theoretical models.
We decided to investigate the role of the electron-phonon coupling across the ferroelectric
instability by means of temperature dependent RIXS measurements.
We could identify the spectral signature of phonon excitations at the Ti-L3 absorption
threshold and found that they persist along all the structural phase transitions occurring in thematerial.
Experimental method and key experimental data:
Ti L3-edge RIXS data have been acquired at Hornet end station of BL07LSU at SPring8.
Data have been collected with: π-polarized light, a fixed 90° scattering angle and an incidence
angle of 55°, corresponding to a transferred momentum 10° off from the ferroelectric axis.
Close to the elastic response, phonon excitations can be enhanced by tuning the incoming
photon energy to the eg absorption peak (Fig1.a). The phonon response is present for all
temperature conditions, meaning different structural phases: from rombohedral to cubic.
Conclusion, examination and reference list:
A Franck-Condon model has been used to simulate the data [3].
A quite good agreement has been found for a phonon energy of hω= 65 meV (Fig1.c).
Phonon modes of energy around hω≈60 meV have been already measured in this compoundby means of Raman experiments [4-6].
The Franck-Condon model allows us to estimate the electron-coupling constant andcompare it to the one obtained on a similar compound (TiO2), already investigated by us[7-8].
REFERENCES:[1] C.A. Randall et al, Cross Materials Research Institute The Pennsylvania State
University University Park, PA 16802 USA[2] R.E. Cohen and H. Krakauer, Phys. Rev. B 42, 10 (1990)[3] L. J. P. Ament et al., EPL (95) 27008 (2011)[4] G.A. Barbosa et al., Solid State Comm. 11, 1053-1055 (1972)[5] M.P. Fontana et al., Solid State Comm. 10, 1-4 (1972)[6] M. Lambert et al., Solid State Comm. 7, 305-308 (1969)[7] S. Moser et al., Phys. Rev. Lett. 110, 196403 (2013)[8] S. Moser et al. Phys. Rev. Lett. 115, 096404 (2015)

a)

XAS spectrum at room temperature. Dashed vertical line indicates the energy of the incoming photons for
RIXS measurements.
b) Franck-Condon simulation.

DEVELOPMENT OF AMBIENT PRESSURE ANGLERESOLVED ULTRA-HIGH RESOLUTION RIXS SYSTEM
Yoshihisa Harada*, Jun Miyawaki, Hideharu Niwa, Hisao Kiuchi,
Kosuke Yamazoe, Takanobu Inoue, Yitao Cui*

Synchrotron Radiation Laboratory, The Institute for Solid State Physics, The University of Tokyo

We have constructed and developed an ultra-high resolution soft X-ray emission (or resonant
inelastic X-ray scattering = RIXS) spectrometer with its energy resolution E/∆E > 8000
optimized in the energy range from 350 eV to 750 eV as an endstation for the University ofTokyo outstation beamline BL07LSU in SPring-8. The RIXS station is dedicated for soft
X-ray emission spectroscopy under various environmental conditions (gases, liquids andsolids). In 2015, three major upgrades of the station has almost been accomplished, i.e.
differential pumping system for windowless atmospheric pressure experiments, installation ofa spectrometer rotation system for angle resolved RIXS experiments, and installation ofultra-precise low slope-error post-focusing mirror to realize 1µm-level focusing of soft X-rays.
Commissioning exams of the angle resolved RIXS will be implemented in the first half of2016 cycle and will be open to users in the second half.
Figure 1 shows the differential pumping
system for real ambient pressure RIXS
experiments. For the incident beam wehave succeeded in the real ambientpressure at sample position because we
can put small (1-2mm diameter) aperturesthat do not intersect the low emittancebeam, while for the emission we shouldovercome a lot of difficulties in order tocollect divergent fluorescence and/or
RIXS signals. Finally we have succeeded Fig. 1 Differential pumping system for ambientpressure soft X-ray RIXS experiments
in a quasi-ambient (ca. 0.5 bar) pressure O
K-edge RIXS experiments on SiO2, which
Ambient XES of SiO2
is shown in Fig. 2.
2Pa
Figure 3 shows the spectrometer rotation
100Pa
10Pa
system developed in our laboratory and
100Pa
1000Pajust installed in our endstation. The
5000Pa10000Pa
three-axis rotation chamber for automatic
20000Paand continuous rotation of the soft X-ray
50000Pa(0.5bar)emission port along the horizontal axis
was originally designed and applied forpatent, which enables ±45 degrees
continuous rotation of the RIXS
spectrometerfromthehorizontal
perpendicular direction to the incident Fig. 2 Gas pressure dependence O K-edge
RIXS spectra of SiO2 from 2Pa tobeam. The ultra-precise position control
quasi-ambient pressure (0.5bar).
system on a distortion- and vibration-freerigid base plate enables us not to lose the focusing of a RIXS spectrum upon the spectrometerrotation.

Fig. 3 Ultra-precise rotation system for angle resolved soft X-ray RIXS experiments;(a) full image of the spectrometer system (b) three-axis rotation chamber.

Low energy property of one-dimensional metallic surface states of
Pt-induced atomic nanowires on Ge(001)
Koichiro Yaji and Fumio Komori
Institute for Solid State Physics, The University of Tokyo
One-dimensional (1D) electronic systems are well known as sources of intriguing physicalphenomena such as a Tomonaga-Luttinger liquid (TLL) and Peierls-type metal-insulatortransition. Besides, the surface bands split into two due to the Rashba effect if the 1D systems
are including heavy element atoms. Platinum-induced atomic nanowires formed on a Ge(001)surface (Pt/Ge(001) NWs) are one of the suitable systems to study such peculiar phenomenaof 1D electrons. The defect-less Pt/Ge(001) NWs was firstly observed by Gürlu et al. withscanning tunneling microscopy [1]. After that, Houselt et al. reported that the surface ofPt/Ge(001) NWs undergoes a structural phase transition at 80 K, where the high-temperature(HT) (low-temperature (LT)) phase exhibits a p(4×2) (p(4×4)) periodicity [2]. Recently, we
experimentally proposed the atomic configuration of Pt/Ge(001) NWs by means of reflection
high-energy positron diffraction [3]. Detailed electronic band structures of Pt/Ge(001) NWs
studied by angle-resolved photoelectron spectroscopy (ARPES) were reported in our previous
paper [4], in which we identified two metallic bands
derived from Pt/Ge(001) NWs (Fig. 1). One of themetallic bands (S1) exhibits straight Fermi lines in the
kx−ky space, indicating that electrons in this band
behave as an ideal one-dimensional metal. Anothermetallic band (S2) is a quasi-one-dimensional statebecause the band exhibits large two-dimensional
undulation. Nevertheless, we have found no gap
opening of the quasi-1D metallic bands at the Fermi
level in the LT phase.
Fig. 1 Constant energy ARPES map at
In the present study, we performed high-resolution the Fermi level of Pt/Ge(001) NWs.
ARPES with a vacuum ultraviolet laser light Thin solid and dashed lines denote the(laser-ARPES) to obtain precise information about boundaries of the SBZs of p(4×4) andboth spin splitting and deviation from Fermi liquid p(4×2), respectively [4].
behavior for the metallic bands.
The experiments were performed with the LOBSTER machine at Laser and Synchrotron
Research Laboratory, the Institute for Solid State Physics [5]. The sample was in situ preparedin a molecular beam epitaxy chamber connected to an analysis chamber. We used a vicinaln-type Ge(001) substrate, which was tilted toward the [110] direction by 2°. A clean Ge(001)surface was prepared by several cycles of 0.5 keV Ar+ ion bombardment at 670 K andannealing up to 900 K for a minute. Then, platinum was deposited onto the clean Ge(001)surface from a Pt wire heated by electron bombardment. The amount of deposited Pt was
adjusted by checking the sharpness of low energy electron diffraction spots. In thelaser-ARPES measurements, photoelectrons were excited by 6.994-eV photons and wereanalyzed with a ScientaOmicron DA30-L analyzer. The energy resolution of the laser-ARPES
instruments was set to 2 meV. In the present study, we used linear-horizontal photon
polarization, of which the electric-field vector is parallel to a light incident plane and a (110)plane of the Ge(001) substrate.
__
Figure 2(a) exhibits a laser-ARPES intensity image along ΓJ at 15 K [6]. In the upper
panel of Fig. 2(a), an MDC at the binding energy of 5 meV is displayed. We clearly observed
two metallic bands, S1 and S2. However, we found no splitting for both S1 and S2 even withthe 2-meV energy resolution.

Next, we examined the density of states (DOS)analysis of the bands. Figure 2(b) displays energy
distribution curves (EDCs) of S1 and S2, where thephotoelectron intensities surrounded by rectangles
shown in Fig. 2(a) were integrated to obtain the
EDCs. We can recognize that a line shape of the
EDC of S1 is quite similar to that of S2. In addition,
we found that the photoelectron intensities from theS1 and S2 bands are slightly suppressed at the Fermi
level and slopes of the EDCs around the Fermi
level are gentle compared with that from the Au
film.
The TLL scenario for S2 is obviously ruled out
because of the two-dimensional interaction. Thus,
we suggest that the suppression of DOS for the S2band is attributed to the weak localization due tostructural disorders on the surface. In contrast to
the S2 band, the S1 band exhibits an ideal
one-dimensional metallic property. Thus, we canconsider two scenarios to explain the suppressionof DOS of the S1 band at the Fermi level. One of
the scenarios is weak localization of the metallic
electrons arising from the disorder, as seen in theS2 band. The other scenario is a TLL picture. We
analyzed the observed DOS of the S1 band with a
TLL spectral function considering the finite
temperature [7]. From the fitting, we obtained an
exponent α = 0.25. This exponent value is muchsmaller than that found in other TLL systems, suchas carbon nanotubes, a lithium purple bronze and
Bi/InSb(001). This indicates that electron-electroninteraction of the S1 band is rather weak comparedwith the other systems in the TLL scenario.

Fig. 2 (a) (Upper panel) The momentum
distribution curve at the binding energy of 5
meV. (lower panel) ARPES intensity image
recorded along a bold dashed line shown in
Fig. 1. (b) (Top) The integrated EDC of S2.
(Middle) The integrated EDC of S1. The solid
curve represents a fitting result with the TLL
spectral function considering the finite
temperature. (Bottom) The Fermi edge takenfrom a Au film. The solid curve represents afitting result with the Fermi-Dirac distributionfunction and polynomial background [6].

References[1] O. Gürlu, O. A. O. Adam, H. J. W. Zandvliet and B. Poelsema, Appl. Phys. Lett. 83, 4610 (2003).
[2] A. van Houselt, T. Gnielka, J. M. J. Aan de Brugh, N. Oncel, D. Kockmann, R. Heid, K. P. Bohnen,
B. Poelsema, and H. J. W. Zandvliet, Surf. Sci. 602, 1731 (2008).
[3] I. Mochizuki, Y. Fukaya, A. Kawasuso, K. Yaji, A. Harasawa, I. Matsuda, K. Wada and T. Hyodo,
Phys. Rev. B 85, 245438 (2012).
[4] K. Yaji, I. Mochizuki, S. Kim, Y. Takeichi, A. Harasawa, Y. Ohtsubo, P. Le Fèvre, F. Bertran, A.
Taleb-Ibrahimi, A. Kakizaki and F. Komori, Phys. Rev. B 87, 241413(R) (2013).
[5] K. Yaji, A. Harasawa, K. Kuroda, S. Toyohisa, M. Nakayama, Y. Ishida, A. Fukushima, S.
Watanabe, C.-T Chen, F. Komori and S. Shin, Rev. Sci. Instrum. 87, 053111 (2016).
[6] K. Yaji, S. Kim, I. Mochizuki, Y. Takeichi, Y. Ohtsubo, P. Le Fèvre, F. Bertran, A. Taleb-Ibrahimi,
S. Shin and F. Komori, J. Phys.: Condens. Matter 28, 284001 (2016).
[7] K. Schönhammer and V. Meden, J. Electron Spectrosc. Relat. Phenom. 62, 225 (1993).

SPIN-POLARIZED SURFACE ELECTRONSIN THE NOVEL SUPERCONDUCTOR Sr2RuO4 REVEALEDBY LASER SPIN- AND ANGLE-RESOLVED PHOTOEMISSION
SPECTROSCOPY
K. Kuroda1, S. Akebi1, M. Nakayama1, K. Yaji1, H. Taniguchi2, Y. Maeno2,
S. Nakatsuji1, T. Kondo1
1
The Institute for Solid State Physics, The University of Tokyo
2
Deparatment of Physics, Kyoto University
Introduction:
Since the discovery of superconductivity in Sr2RuO4, many theoretical and experimental
efforts have been paid for examining spin-triplet chiral p-wave superconductivity [1-3].
However, some recent experiments have not supported this, in which spin-triplet
superconductivity alone was insufficient to explain the experimental facts [4, 5]. This
contradiction perhaps comes from the inclusion of low-energy fine-electronic structure and its
wavefunction character due to spin-orbit coupling (SOC). In the presence of SOC, thequantum states with different orbitals and spins are generally mixed and the eigenstate
wavefunction is strongly modified. In particular, it can be easily imagined that SOC possibly
plays a fundamental role beyond simple models for Cooper pairing mechanism, since theenergy scale of its SOC of nearly 100 meV is much larger than the scale of Tc ~0.2 meV.
Moreover, similar to surface states on noble metals with strong SOC, in concert with aninversion-symmetry breaking at the surfaces, SOC raises the possibility that spin-polarized
surface states, which can exist on the (001) cleaved surface. If it is realized, the chiralsuperconductivity topological edge states might be detected below Tc on the side surfaces [6].
Thus, it is an important key for understanding mechanism of superconductivity andtopological characters in Sr2RuO4 to investigate roles of SOC in its electronic structure andwavefunction character. In this report, we have focused on the surface state in Sr2RuO4 anddirectly investigate the SOC state by using laser spin- and angle-resolved photoemission
spectroscopy (laser-SARPES).
Experimental:
Laser-SARPES experiments were performed at newly home-built laser-SARPES machineat ISSP with high-flux 6.994-eV laser light [8]. The laser-SARPES machine is based on two
high efficient VLEED spin-polarimeters and the hemispherical analyzer with photoelectron
deflector function (ScientaOmicron DA30L). This spectrometer can resolve spin polarization
components of photoelectrons in three-dimension for in-plane (Px,y) and out-of-plane (Pz)orientation. The clean surface of Sr2RuO4 was in situ cleaved at below 10 K. During themeasurement, the sample temperature was kept below 20 K, and instrumental energy andangular resolutions were set below 20 meV and 0.7◦, respectively. All data was taken before
sample degradation within 24 hours. Note that our laser photon energy is only sensitive to thesurface states and thus the surface state can be selectively measured in our laser-SARPES
experiments.
Results:
We start with a brief explanation for overall shape of Fermi surface obtained by our laser
photon energy as shown in Fig. 1(a). The three-bands, -band, -band and -band, form theFig. 1: (a) Shape of the Fermi surfaces for (001) cleaved surface of Sr 2RuO4. Our laser photon energy enables us
to selectively detect only the surface signals. The laser-SARPES experiments were done at A and B,
corresponding to kF of -bands. These two k|| points are symmetric with respect to the mirror plane (ky=0 Å-1plane). (b) The experimental configuration for A and B, and the definition of the spin orientations. (c) and (d)The spin-resolved energy-distribution curves at A and B, respectively.

Fermi surface indicated by closed arrows. Furthermore, due to the presence of strong surface
relaxation [7, 8], these-three bands are folded denoted by opened arrows, and thus the surface
states are strongly modified by not only SOC but also surface crystal potential, that is,inversion symmetry breaking. In this work we performed laser-SARPES at two symmetric k||(A and B) as indicated by open circles, corresponding to -band near the Fermi level. We
should note that the SARPES geometry for these two k|| is very simple: the laser electric field
is applied normal to the surface, which is therefore sensitively to excite the in-plane orbital of
the wavefunction. Figure 1(b) and (c) represent 3D-SARPES results at A and B, respectively[see Fig. 1(a)]. Red (blue) marks show the spin-up (spin-down) state for each axis. We
observe clear spin-polarization at both k|| only along x-axis. Observed spin polarizations isfound to be extremely large ~70 %. Importantly its orientations are symmetric: it aligns along+x direction at A but it turns to be –x at B. This symmetric spin-polarization indicates that the
-band is intrinsically highly spin-polarized. Thus, we conclude that the SOC plays a role in
the wavefucntion of Sr2RuO4 and moreover the surface state are highly spin-polarized due tothe inversion-symmetry breaking. We stress that the modification of the wavefunction must
be considered in the model for understanding Cooper paring mechanism in Sr2RuO4.
References:[1] K. Ishida et al., Nature 396, 658 (1998).
[2] T. M. Riseman et al., Nature 396, 242 (1998).
[3] K. D. Nelson et al., Science 306, 1151 (2004).
[4] S. Kittaka et al., Phys. Rev. B 80, 174514 (2009).
[5] S. Yonezawa et al., Phys. Rev. Lett. 110, 077003 (2013).
[6] S. Kashiwaya et al., Phys. Rev. Lett. 107, 077003 (2011).
[7] K. M. Shen et al., Phys. Rev. B 64, 180502 (2001).
[8] R. Matzdorf et al., Science 289, 746 (2000).

LASER SPIN-AND ANGLE-RESOLVED PHOTOEMISSION STUDY ON
SPIN-ORBITAL ENTANGLED SURFACE STATES OF TOPOLOGICALINSULATORS
K. Kuroda, K. Yaji, A. Harasawa, M. Nakayama, F. Komori, T. Kondo
The Institute for Solid State Physics, The University of Tokyo
Introduction:
A central subject in the research for spintronic application is realization of functional
capabilities to generate highly spin-polarized electrons and control its spin degree of freedom.
As a promising spintronic material, a highly spin-polarized topological surface states (TSS) in
three-dimensional topological insulators (TIs) has grabbed particular attentions. The TSS
forms Dirac-cone-like energy dispersion and exhibits chiral spin texture in momentum space
due to the strong spin-orbit coupling (SOC) [1]. The peculiar spin texture protects the TSS
electron from electron backscattering, which makes the TSS robust against perturbations. The
TSS therefore can be useful as a novel spin generator and conductor. Here, the TSS faces a
new challenge for optical control over its spin properties. In addition to the chiral spin texture,
it was proposed that the relativistic SOC plays an important role to blend quantum states withdifferent spin and orbitals, which gives rise to a "spin-orbital texture" in TSSs as shown in
Figure 1(A) [2]. Since electric field of light directly couples with the orbitals, through theentanglement of the spin and orbital parts of the wavefunction, it may enable us to opticallymanipulate the spin degree of freedom.
In this report, by a combination of SARPES technique with three-dimensional (3D)
spin-resolution and polarization-variable vacuum-ultraviolet (VUV) laser, we demonstrate thespin-orbital texture of TSS in Bi2Se3. We show that symmetric experimental configurations
for p- or s-polarization set-up selectively excite either spin-up or spin-down state from thespin-orbital textures, which is available for novel optspintronic devices.
Experimental:
Laser-SARPES was performed at newly home-built laser-SARPES machine at ISSP withhigh-flux 6.994-eV laser light [3]. The laser-SARPES machine is based on two high efficient
VLEED spin-polarimeters and the hemispherical analyzer with photoelectron deflector
function (ScientaOmicron DA30L). This spectrometer can resolve spin polarization
components of photoelectrons for in-plane (Px,y) and out-of-plane (Pz) orientation. These spinpolarized photoelectrons are excited by p- or s-polarized light as shown in Fig. 1(B) and (C).
During the measurement, the sample temperature was kept below 20 K, and instrumental
energy and angular resolutions were set below 20 meV and 0.7◦, respectively.
Results:
Figure 1(D) represents standard ARPES intensity map for Bi2Se3 along the -M highsymmetry line of the surface Brillouin zone. The data well resolves the sharp TSS with the
Dirac-cone-like energy dispersion and the bulk conduction band at the center of the surface
state. Figure 1 (E) and (F) show the three-dimensionally spin-resolved energy distribution
curves (EDCs) and the corresponding spin polarization curves obtained at (kx, ky) = (‒kF, 0)[dashed line in Fig. 1(D)] by using p- and s-polarization geometry, respectively. For they-spin polarization (Py), our data clearly shows nearly ±100% reversal property ofphotoelectron spin polarization with switching the light electric field between. As aconsequence of the full polarization of Py, the perpendicular components, Px and Pz, areFig. 1: (A) The schematics for the spin-orbital texture for the upper topological surface state [2]. (left, middle) pz
and the tangential orbital texture (pt) with the right-handed helical spin texture and (right) the radial orbital
texture (pr) with the different spin texture. (B), (C) The experimental configuration for p- and s-polarization. The
light incidence plane and the detection plane match the mirror plane of the crystal. The s- (p-) polarization
excites odd (even) parity orbitals with respect to the mirror plane [the dashed line in Fig. 1(A)], which iscorresponding to py (pz and px) like orbitals. (D) ARPES intensity map along the -M symmetry line. (E), (F)Three-dimensional spin-resolved photoemission intensity and the corresponding spin polarization as a functionof binding energy obtained by p- and s-polarizations, at fixed emission angle corresponding to the dashedline-cut in (D). The observed spin orientations are shown in the insets.

negligibly small for the both linear polarizations. These observed fully spin-polarized
photoelectrons can be directly imagined from the spin-orbital textures as shown in Fig. 1 (A)and general dipole selection rule for even-odd parity orbitals. In the textures, p-polarized lightselectively excites even components with pz- and px-like orbitals, which is fully spin polarizedalong y at ‒kx location [left and middle textures in Fig. 1(a)]. On the other hand, thephotoelectrons are emitted only from odd one of py-like orbital coupled with the opposite spinorientation by s-polarized light [right textures in Fig. 1(a)].

References:[1] M. Z. Hasan, C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).
[2] H. Zhang, C.-X. Liu, S.-C. Zhang, Phys. Rev. Lett. 111, 066801 (2013).
[3] K. Yaji et al., Rev. Sci. Instrum., 87, 053111 (2016).

TESTING THE SURFACE PHOTOELECTRIC EFFECT
Y. Ishida, K. Yaji, S. ShinThe Institute for Solid State Physics, The University of Tokyo
A long-wavelength approximation is often assumed a priori when the interaction between
light and matter is concerned. The assumption, however, may be strongly invalidated in thesurface region at the atomic scale, particularly when the photon energy is low [1]. Here, we
test its validity in the photoelectric effect.
When the long-wavelength approximation is valid, the electrons subjected to the photon
field A cannot sense the direction of the light propagation. The validity can thus be tested byinvestigating whether or not the angular distribution of photoelectrons depends on the
propagation vector of the light. Figure 1(a) shows the setup for the test. Here, the 7-eV light iss-polarized, and the photoelectrons are collected by Scienta-Omicron analyser [2]. In thisconfiguration, it is only the propagation vector that breaks the mirror symmetry of the setup
with respect to the plane spanned by the s-polarization vector and surface normal of thesample. The photoelectron distribution thus becomes asymmetric (symmetric) with respect tothe geometrical mirror plane when the photoelectric effect is susceptible (unsusceptible) to the
propagation vector. Here, the sample should not break the mirror symmetry: To fulfil thiscondition, we chose highly-oriented Bi microcrystals grown on a highly-oriented
pyro-graphite for the sample [3]. The microcrystals are randomly oriented in plane with their
111 face oriented normal to surface, so that the effect of the crystal symmetry is averaged out
in the azimuth.
Figure 1(b) shows the angular distribution of photoelectrons at the binding energy EB = 60
meV; that is, the distribution is of the photoelectrons emitted from the surface states on
Bi(111). A Debye-ring-like distribution is observed due to the random in-plane orientation of
the microcrystals. Clearly, the distribution is asymmetric about the geometrical mirror plane,X = 0. The result shows that the photoemission from the surface-localized electrons depends
on the propagation vector of the s-polarized light; thus the breakdown of the approximation.
Based on the jellium model, the breakdown occurs only for p-polarized component of A
[1]. The present result thus calls for a description beyond. We note that the three-slab model
often used in the field of surface nonlinear optics can qualitatively explicate the phenomena.

Fig. 1: Testing the surface photoelectric effect. (a) Experimental geometry. Photoelectron
distribution becomes asymmetric (symmetric) when the photoelectric effect is susceptible(unsuceptible) to the propagation vector of light. (b) Distribution of photoelectrons emitted
from highly-oriented Bi(111).
REFERENCES[1] H. J. Levinson, E. W. Plummer, and P. J. Feibelman, Phys. Rev. Lett. 43, 952 (1979).
[2] K. Yaji et al., Rev. Sci. Instrum. 87, 053111 (2016).
[3] Y. Ishida et al., Submitted.

SPIN POLARIZATION OF 1D SURFACE STATE ON BI/INSB(001)
J. Kishi1, Y. Ohtsubo1,2, A. Harasawa3, K. Yaji3, F. Komori3, S. Shin3, S. Kimura1,2
1

Department of Physics, Graduate School of Science, Osaka University
2
Graduate School of Frontier Biosciences, Osaka University
3
Insutitute for Solid State Physics, The University of TokyoA spin-polarized electronic state is one of the key element for future spintronic devices. The
spin-polarized states are not only the source of spin-polarized electric current but also
applicable for ballistic electron transport thanks to the restricted backscattering due to the spindependent scattering process. For this purpose, surface states on topological insulators [1] andrelated materials containing heavy elements with strong spin-orbit interaction (SOI) [2-7] areattracting much attention in recent days. The surface states of Bi are one of the typical examples
and have been studied extensively for this decade: surface states on Bi(111) single crystal [3],Bi(111) ultrathin films [4, 5].
In this work, we fabricated Bi ultrathin film on the InSb(001)-c(8×2) substrate and determined
the surface electronic structure and its spin polarization by the spin- and angle-resolved
photoelectron spectroscopy using a laser (laser-SARPES) at the Institute for Solid State Physics(ISSP). The electronic and atomic structures of Bi ultrathin films on InSb(001) showed obvious
one-dimensional (1D) character, which is a clear difference from the well-known case grownon Si(111) [4, 5].
Figure 1(a) shows the low-energy electron diffraction (LEED) pattern of the Bi/InSb(001)film. The pattern is streaky along the vertical direction, possibly due to the variety of the surface
periodicity along this direction. In contrast, the width of the pattern along the lateral direction
is sharp, indicating well-defined surface order along this direction. Such 1D surface atomic
structure would be due to an anisotropic surface atomic structure of the clean surface of
InSb(001)-c(8×2) substrates.
Figure 1(b) shows the spin-integrated surface band dispersion observed by the laser-SARPES
setup. The wave vector k in Fig. 1(b) is parallel to the horizontal direction in Fig. 1(a). Alongthis direction, the observed band showed clear Λ-shape dispersion. Since such dispersion isabsent in the substrate band structure, it is from the 1D Bi film. Actually, the Λ band was lessdispersive along the direction parallel to the vertical axis in Fig. 1(a). Moreover, the band
structure can be fitted with a linear line well. And then, the band velocity along the k direction
can be estimated to be ~5.0×105 (m/s), which is in the same order of magnitude as that of the
Dirac point in graphene, suggesting possible applications to future high speed electron transport
via this surface state. Figure 1(c) shows the spin-resolved MDC at 0.1 eV below the Fermi level(EF). The up (down) spin represents the spin polarization along the direction parallel (antiparallel) to the vertical direction in Fig. 1 (a): in other words, the direction perpendicular to thewave vector and the surface normal. The MDCs in Fig. 1 (c) indicate that the spin polarization
inverts with respect to the normal emission. These spin-polarized characters of surface states
are what is expected for topological surface states and/or Rashba-type spin-split surface bands.
Different from ordinal spin-polarized Dirac cones on topological insulators, the Λ-shapesurface state has finite bandgap around EF. Figure 1 (d) shows the ARPES energy distribution
curves at the room temperature along k divided by a Fermi-Dirac distribution function
convoluted with the instrumental resolution. The bottom of unoccupied state is just above the
top of occupied state which has Λ shape, and the direct energy gap between them can be
estimated to be ~150 meV. It means that electrons at room temperature unlikely jump over thisenergy gap due to thermal excitation.

In summary, we observed pseudo one dimensional surface electronic states on Bi ultrathin
film grown on InSb(001) by laser-SARPES, which have attractive properties: high electron
mobility from steep dispersion, spin polarization possibly realizing backscattering-freetransport, and the direct band gap larger than thermal Fermi-level broadening at RT. These
properties will open the way to future application of this material for spintronic devices.

Figure 1: (a) A Low Energy Electron Diffraction (LEED) pattern of the Bi/InSb(001) surface atroom temperature (RT). (b) ARPES intensity map along k parallel to the horizontal direction in(a). A dashed line (blue) is guide to the eye for the surface band. (c) Spin-resolved momentum
distribution curves taken at 0.1 eV. (d) ARPES energy distribution curves along k, divided by
the Fermi-Dirac distribution function at RT convoluted with the instrumental resolution.

REFERENCES[1] M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).
[2] T. Okuda and A. Kimura, JPSJ 82, 021002 (2013)[3] C. R. Ast et al., Phys. Rev. Lett. 98, 186807(2007)[4] T. Hirahara et al., Phys. Rev. B 76, 153305(2007)[5] A. Takayama et al., Phys. Rev. Lett. 106, 166401(2011)[6] J. W. Wells et al., Phys. Rev. Lett. 102, 096802(2009)[7] M. Bianchi et al., Phys. Rev. B 91, 165307 (2015)

StaffDirector:

SHIN ShikKOMORI Fumio
MATSUDA Iwao, Associate Professor
HARADA Yoshihisa, Associate Professor
WADATI Hiroki, Associate Professor
FUJISAWA Masami, Research Associate
YAMAMOTO Susumu, Research Associate
YAJI Koichiro, Research Associate
MIYAWAKI Jun, Research Associate
HIRATA Yasuyuki, Research Associate
FUKUSHIMA Akiko, Technical Associate
SHIBUYA Takashi, Technical Associate
HARASAWA Ayumi, Technical Associate
KUDO Hirofumi, Technical Associate

Technical Assistant:

KOSEGAWA Yuka
ARAKI Mihoko

Secretary:

AIHARA Yumiko
HARADA Misa(~2015.5, 2015.12~)
KANEKO Yoshie
MITSUDA Emi(~2016.2)
HAYASHI Akiko(~2015.9)
YOSHIZAWA Motoko(2015.5~)
TSUTSUMI Yumiko(2015.5~)
IKEDA Kuniko(2015.11~)

Graduate Student:

KIUCHI Hisao
YAMAMOTO Shingo
KUBOTA Yuya
RO-Ya-Liu
SOMEYA Takashi

ITOH Suguru
TAKEUCHI KaoriITAMOTO Haruki
INOUE Takanobu
YAMAMOTO Kohei
WANG Hao
Contract Researcher:

NIWA Hideharu(~ 2015.7)
TAKUBO Kou
CUI Yitao
FENG Baojie

Publication List(2015)---Harima--Characterization of nitrogen species incorporated into graphite using low energy nitrogen ion
sputtering
Kiuchi, Takahiro Kondo, Masataka Sakurai, Donghui Guo, Junji Nakamura, Hideharu Niwa,
Jun Miyawaki, Maki Kawai, Masaharu Oshima, and Yoshihisa Harada,Phys. Chem. Chem.
Lett.18,458-465 (2016)
Electron-phonon coupling in the bulk of anatase TiO2 measured by RIXS
S. Moser, S. Fatale, P. Krüger, H. Berger, P. Bugnon, A. Magrez, H. Niwa, J. Miyawaki, Y.
Harada, and M. Grioni, Phys. Rev. Lett.115.096404 (2015)
Ultrafast spin-switching of a ferrimagnetic alloy at room temperature traced by resonant magnetooptical Kerr effect using a seeded free electron laser
Sh. Yamamoto, M. Taguchi, T. Someya, Y. Kubota, S. Ito, H. Wadati, M. Fujisawa,
F. Capotondi, E. Pedersoli, M. Manfredda, F. Casolari, Maya Kiskinova, J. Fujii, P. Moras, T.
Nakamura, T. Kato, T. Higashide, S. Iwata, S. Yamamoto, S. Shin, and I. Matsuda,Rev. Sci. Instrum. 86, 083901 (2015).
Perspectives of in situ/operando resonant inelastic X-ray scattering incatalytic energy materials
scienceYi-Sheng Liu, Per-Anders Glans, Cheng-Hao Chuang, Mukes Kapilashrami, Jinghua Guo,
Journal of Electron Spectroscopy and Related Phenomena 200, 282-292 (2015).
Anisotropic effective mass approach for multiple subband structures at wide-gap semiconductor
surfaces: Application to accumulation layers of SrTiO3 and ZnO
R. Yukawa, K. Ozawa, S. Yamamoto, R.-Y. Liu, and I. Matsuda, Surf. Sci. 641, 224-230(2015).
Chemical potential shift in organic field-effect transistors identified by soft X-ray operando nanospectroscopy
Naoka Nagamura, Yuta Kitada, Junto Tsurumi, Hiroyuki Matsui, Koji Horiba, Itaru Honma,
Jun Takeya and Masaharu Oshima, Appl. Phys. Lett., 106, 251604 (2015).
Highly Brilliant Synchrotron Radiation Operando Spectromicroscopy to Bridge a Gap between
Material Electronic Properties and Device Performances of 2D Atomic Layers
吹留 博一, 表面科学, 36(6), 303-308 (2015).
Multi-phonon excitations in Fe 2p RIXS on Mg2FeH6
K. Kurita, D. Sekiba, I. Harayama, K. Chito, Y. Harada, H. Kiuchi, M. Oshima, S. Takagi,
M. Matsuo, R. Sato, K. Aoki, S. Orimo, J. Phys. Soc. Jpn. 84, 043201 (2015).
X-ray spectroscopic study of BaFeO3 thin films: An Fe4+ ferromagnetic insulator
T. Tsuyama, T. Matsuda, S. Chakraverty, J. Okamoto, E. Ikenaga, A. Tanaka, T. Mizokawa,
H. Y. Hwang, Y. Tokura, and H. Wadati, Phys. Rev. B 91,115101 (2015)..

X-ray Emission Spectroscopy of Bulk Liquid Water in "No-man's Land
J. Sellberg, T. McQueen, H. Laksmono, S. Schreck, M Beye, D. DePonte, B. O'Kennedy, D.
Nordlund, R. Sierra, D. Schlesinger, T. Tokushima, S. Eckert, V. Segtnan, H. Ogasawara, K.
Kubicek, S. Techert, U. Bergmann, G. Dakovski, W. Schlotter, Y. Harada, I. Zhovtobriukh,
M. Bogan, P. Wernet, A. Föhlisch, L. Pettersson and A. Nilsson, J. Chem. Phys. 142,
044505 (2015).
A close look at dose: Towards L-edge XAS spectral uniformity, dose quantification and predictionof metal ion photoreduction
M.M. van Schooneveld and S. DeBeer, J. Electron Spectrosc. Relat. Phenom. 198, 31(2015).
Operando soft x-ray emission spectroscopy of LiMn2O4 thin film involving Li-ion
extraction/insertion reaction
D. Asakura, E. Hosono, H. Niwa, H. Kiuchi, J. Miyawaki, Y. Nanba, M. Okubo,
H. Matsuda, H.S. Zhou, M. Oshima, and Y. Harada, Electrochem. Commun. 50, 93 (2015).

---E-labo--Spin polarization and texture of the Fermi arcs in the Weyl Fermion semimetal TaAs
S.-Y.Xu, I.Belopolski, D.S.Sanchez, M.Neupane, G.Chang, K.Yaji, Z. Yuan, C. Zhang,
K.Kuroda, G. Bian, C. Guo, H. Lu, Y. Feng, T.-R. Chang, N. Alidoust, H. Zheng, C.-C. Lee,
S.-M. Huang, C.-H. Hsu, Horng-Tay Jeng, A. Bansil, A. Alexandradinata, T. Neupert,
T. Kondo, S.Shin, H.Lin, S.Jia, M Z.Hasan Phys. Rev. Lett. 116, 096801 (2016)