Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 1/8

CYStech Electronics Corp.
60V N-CHANNEL Enhancement Mode MOSFETMTN2310N3BVDSSIDRDSON@VGS=10V, ID=4A
RDSON@VGS=5V, ID=3A

60V
4A
41mΩ(typ)46mΩ(typ)Features• Simple drive requirement• Small package outline• Pb-free lead plating and halogen-free package

SymbolOutlineMTN2310N3

SOT-23DS

G：Gate
S：Source
D：DrainG

Absolute Maximum Ratings (Ta=25°C)
Parameter

Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃ (Note 3)
Linear Derating Factor
Operating Junction and Storage Temperature Range

SymbolVDS
VGSIDM
PDLimits
60
±204
3.2
16
1.38

Unit
VVA
AA
W

Tj ; Tstg

0.01-55~+150W/°C°CID

Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad

MTN2310N3

CYStek Product Specification

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 2/8

CYStech Electronics Corp.
Thermal Performance
Parameter

Symbol

Limit

Unit

Thermal Resistance, Junction-to-Ambient, max

RθJA

90°C/W

Thermal Resistance, Junction-to-Case, max

RθJC

70°C/W

Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad

Electrical Characteristics (Tj=25°C, unless otherwise noted)
SymbolStaticBVDSS
VGS(th)IGSS
IDSS*RDS(ON)*GFS
DynamicCiss
Coss
Crsstd(ON)trtd(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*IS
*ISM
*VSD
Trr
Qrr

Min.

Typ.

Max.

Unit

Test Conditions

60
1.0-

1.8
4146
93.0
±100
12555
65-

V
V
nA

S

VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=48V, VGS=0
VDS=40V, VGS=0 (Tj=70°C)
ID=4A, VGS=10V
ID=3A, VGS=5V
VDS=5V, ID=4A

-1128
4232
1218326123.7
3.9-

pF

VDS=30V, VGS=0, f=1MHz

ns

VDS=30V, ID=1A, VGS=10V, RG=6ΩnC

VDS=30V, ID=4A, VGS=10V-158416
1.3-μAmΩ

AVnsnC

VGS=0V, IF=IS
VGS=0V, IF=4A, dI/dt=100A/μs*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%Ordering Information
Device
MTN2310N3-0-T1-G
MTN2310N3Package
SOT-23(Pb-free lead plating and halogen-free package)

Shipping
3000 pcs / Tape & Reel
CYStek Product Specification

Spec. No. : C393N3Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 3/8CYStech Electronics Corp.
Typical CharacteristicsBrekdown Voltage vs Ambient Temperature

Typical Output Characteristics
1.416ID, Drain Current (A)

14

BVDSS, Normalized Drain-Source
Breakdown Voltage

10V, 9V, 8V, 7V,6V,5V, 4V

121086
VGS=3V

41.2
10.8
0.6

ID=250μA,
VGS=0V

20.4-100008

246VDS, Drain-Source Voltage(V)Static Drain-Source On-State resistance vs Drain Current

200

1.2

1000

VSD, Source-Drain Voltage(V)R DS(on), Static Drain-Source On-StateResistance(mΩ)

050
100150Tj, Junction Temperature(°C)

Reverse Drain Current vs Source-Drain Voltage

10000

VGS=3V
VGS=2.5V

100

VGS=4.5V

VGS=0V1
Tj=25°C

0.80.6

Tj=150°C

0.4

VGS=10V

0.2

100.01

0.1

110ID, Drain Current(A)

0100

2468
IDR , Reverse Drain Current(A)10Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source
Voltage400

2360

R DS(on), Normalized Static DrainSource On-State ResistanceR DS(on), Static Drain-Source OnState Resistance(mΩ)

-50

320

1.6280240

VGS=4.5V, ID=3A

1.2200160120

ID=4A
ID=3A80

0.8VGS=10V, ID=4A400.4

00MTN2310N32468VGS, Gate-Source Voltage(V)10-60-202060
100
140Tj, Junction Temperature(°C)

180

CYStek Product Specification

Spec. No. : C393N3Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 4/8

CYStech Electronics Corp.
Typical Characteristics(Cont.)Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage

Capacitance---(pF)

10000

Ciss

1000

100C oss
Crss

1.4
ID=250μA

1.2
10.8
0.60.4

100.1

110VDS, Drain-Source Voltage(V)-60100-20100140Gate Charge Characteristics

10010VDS=15V

VGS , Gate-Source Voltage(V)GFS , Forward Transfer Admittance(S)60Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

101

VDS=5VPulsed
Ta=25°C

8VDS=30V

6VDS=48V

42

ID=4A

00.1
0.01

0.1

110ID, Drain Current(A)01004812Qg, Total Gate Charge(nC)

16Maximum Drain Current vs Junction Temperature

Maximum Safe Operating Area
51004.5RDSON
Limited10100μs

1ms

110ms
TC=25°C, Tj=150°CVGS=10V, RθJA=90°C/W
Single Pulse

0.1

100ms
DC

ID, Maximum Drain Current(A)ID, Drain Current (A)

20

43.5
32.5
21.5

TA=25°C
VGS=10V
RθJA=90°C/W

10.5
00.01
0.1

MTN2310N3110VDS , Drain-Source Voltage(V)

100

2550

75
100
125
150
Tj, Junction Temperature(°C)

175

CYStek Product Specification

Spec. No. : C393N3Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 5/8

CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
5040
VDS=5V

35TJ(MAX) =150°C
TA=25°C
θJA=90°C/W

4030

Power (W)ID, Drain Current(A)Single Pulse Power Rating, Junction to Ambient(Note on page 2)2520151030
20105002468VGS, Gate-Source Voltage(V)101200.0001

0.001

0.01
0.1
1Pulse Width(s)10100Transient Thermal Response Curves
1r(t), Normalized Effective Transient ThermalResistance

D=0.5

0.2
0.1

0.1

1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)4.RθJA=90°C/W

0.05
0.02
0.01
0.01

Single Pulse
0.001
1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03t1, Square Wave Pulse Duration(s)Recommended Soldering Footprint

MTN2310N3

CYStek Product Specification

CYStech Electronics Corp.

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 6/8

Reel Dimension

Carrier Tape Dimension

MTN2310N3

CYStek Product Specification

CYStech Electronics Corp.

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 7/8

Recommended wave soldering condition
ProductPb-free devices

Peak Temperature
260 +0/-5 °C

Soldering Time
5 +1/-1 seconds

Recommended temperature profile for IR reflow

Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat−Temperature Min(TS min)−Temperature Max(TS max)−Time(ts min to ts max)Time maintained above:−Temperature (TL)
− Time (tL)Peak Temperature(TP)Time within 5°C of actual peaktemperature(tp)Ramp down rate
Time 25 °C to peak temperature

Sn-Pb eutectic AssemblyPb-free Assembly

3°C/second max.

3°C/second max.

100°C
150°C
60-120 seconds

150°C
200°C
60-180 seconds

183°C
60-150 seconds
240 +0/-5 °C

217°C
60-150 seconds
260 +0/-5 °C

10-30 seconds

20-40 seconds

6°C/second max.
6 minutes max.

6°C/second max.
8 minutes max.

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTN2310N3CYStek Product Specification

Spec. No. : C393N3
Issued Date : 2007.11.26
Revised Date :2013.04.17
Page No. : 8/8

CYStech Electronics Corp.
SOT-23 Dimension
Marking:AL
3BTE2310

S2

1

3-Lead SOT-23 PlasticSurface Mounted Package
CYStek Package Code: N3GV

Style: Pin 1.Gate 2.Source 3.Drain

C
DKH

J

*: TypicalInches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040

DIM
A
B
C
D
G
H

Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10

DIM
JK
L
SV

Inches
Min.
Max.
0.00340.00700.01280.0266
0.03350.04530.08300.11610.00980.0256

Millimeters
Min.
Max.
0.085
0.1770.32
0.67
0.85
1.15
2.10
2.95
0.25
0.65

Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTN2310N3

CYStek Product Specification

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