POTENS Semiconductor Corporation
博盛半導體股份有限公司
ポテンツ セミコンダクタ コーポレーション
2024Q2B

会社概要
会社名：博盛半導體股份有限公司
英社名：Potens Semiconductor Corp.
日本名：ポテンツ・セミコンダクタ

第32回國家磐石獎受賞

董事長総経理：孟祥集（Menq Meng）
創業日：2012年４月
上場日：2023年11月(Emerging Stock Board - Taipei Exchange)
資本金：NT$2.94億(12.6億円）
本社：台湾新竹縣竹北市高鐵二路32號6樓之3 TEL：886-3-6682068
営業処 ：新竹、台北、日本、中国、韓国、ドイツ
販売網 ：台湾、日本、中国、韓国、アメリカ、インド、ブラジル、ドイツ、等21ヵ国
従業員数：70名（2024年4月現在）
事業内容：パワー半導体・電源IC・電源の設計開発と製品販売取得認証：ISO9001・ISO14001
売上金額：2022年度73億円 *為替条件 1:4.3
Potens Confidential Information

2

創業者紹介

創業理念
感動を生む製品とサービスで日々の生活をより豊かに

R&D VP : Tony Lai
1996~1999: Episil Process Engineer

President : Menq Meng 孟祥集

Sales VP : C.C. Tsao

1996~1998: HSMC MOS TD Engineer

1999~2003: SiS TD Senior Engineer
2003~2008: PSMC (PSC) TD/Device Deputy Manager

1998~2008: APEC MOS Product & FAE Manager(Founder)

2008~2013: PSMC(Maxchip) TD Manager (MOS Development)

2008~2012: UBIQ MOS Marketing VP(Founder)

2013~Now: Potens R&D VP (Founder)

2012~Now: Potens CEO (Founder)

Potens Confidential Information

1999~2008: APEC MOS Sales Senior Manager
2008~2012: UBIQ MOS Sales Director
2012~Now: Potens Sales VP (Founder)
3

Potens新竹本社
新竹

新竹縣竹北市高鐵二路32號6F & 15F

新竹高鐵站より徒歩５分

Potens Confidential Information

4

Potens新竹開発センター
2024 Q4 will be starting to operate.
Parameter Analysis Lab.

Reliability Setup Layout

Clean
room

Potens Confidential Information

5

Potens台北営業本部
2024 Q3 will be starting to operate.

臺北南港高鐵站より徒歩３分
Potens Confidential Information

6✓既存拠点 ✓計画拠点

営業拠点（５拠点）・販売網（21ヵ国）✓✓

Potens Confidential Information

✓
✓

✓
✓
✓

7

企業指針
✓

開発販売

顧客との価値共創を重視

✓

品質・技術

徹底した技術サポート QCDST

✓

新製品開発

新製品・次世代製品の積極展開✓

豊富な製品ラインナップ

低耐圧から高耐圧品まで拡充

8

製品一覧
Industrial Driver
PV Inverter
UPS◼ UMOS Gen 1+2
N MOS: 12V~200V P MOS: 12V~ 150V
◼ UMOS Gen 3 (smaller chip,better Ciss Qg)
P MOS: 20V~ 40V◼ SGT Gen 1+2
N MOS: 30V~150V P MOS:100V◼ SGT Gen 2plus (smaller chip,better Ciss Qg)
N MOS: 40V~100V

SMPS
ServerBLDC
SMPS PFC
LED Lighting
Motor Control

300品種~

1200V SiC MOS/SBD
Super Junction 600~800V

600V SiC SBD/GaN/IGBT

650品種~(Pch 152品種）

LED Lighting
Telecom

1500V MOSFETs(Super junction30品種~）

150V MV Double Trench

6 in 1 Double Trench
4 in 1 Double Trench(30V ~100V)

Motor Drive
Power Tools

Gen1 & Gen2
MV Double Trench

2nd Sync.
Car head light
ComputingHand-Held
Battery

Gen1 LV Double Trench
12V CSP

10V
Potens Confidential Information

20V

24V CSP

30V

60V

100V

200V

650V

800V

1000V

1500V
9

製品ロードマップ
Industrial
DriverPV Inverter
UPS

1500
V

Gen2 1,500V
MOSFETs
1,200V SiC SBD

1000
V
800V

SMPS
Server
BLDC
Charger

650V
500V

SMPS PFC
LED Lighting
Motor
Control
Telecom
Motor Driver
Automotive
Power Tools
2nd side
Sync.
Computing
D/D
Consumer
Hand-Held
Battery

600-800VSJ MOSFETs
650V SiC SBD

1,200V
SiC MOSFET

650V IGBT
Field Stop

650V
GaN SBD

1,200V
SiC Module

SiC Isolated IC
For Automotive

650V
SiC MOSFET

1,200V IGBT
Field Stop650V
GaN HEMTGen1 N 250V
Double Trench

200V

3,300V
SiC MOSFET

1,700V
SiC MOSFET

650V GaN
HEMT + Driver
Gen1 N 300V
Double Trench

Gen2 N 150V Gen2 N 115V Gen1 N 200V
Double Trench Double Trench Double Trench
40/60/80V , Buck/Boost PWM IC
Gen1 P 100V
60V
Gen3 65V
Double Trench
60V @30mm
MV
DoubleTrenchLV
30V
Double Trench
Automotive
6 in 1
Automotive
Gen3 LV
Super Low Iq
Gen2 LV
20V Double Trench
30V Dr. MOS
12V CSP /DoubleTrenchLDO
Double TrenchProtection ic

Gen1 N 150V
100V Double Trench

2021
Potens Confidential Information

2022

2023

2024
10

MOSFET Low Rdson品 (~100V)
RON[mΩ]

VDS[V]

Potens Confidential Information

11

MOSFETパッケージリスト１

Potens Confidential Information

12

MOSFETパッケージリスト２

Potens Confidential Information

13

パッケージ カバー率

Potens Confidential Information

14

パッケージ ロードマップ
60~パッケージ展開
Size (mm x mm)

AEC-Q101

TO-3PF

TO247

TO247-4L

TO-3P
TO268

Copper RDL

15.9 x 21.0

TO247

Small Package

15.9 x 18.9
TO220F

TO220

TOLL

TO263-6L

TO263

TO263-7L

TO262 TO220 TO263

10.2 x 15.0
DFN10X10 (6 in 1)

TOLT

10.0 x 10.0
TO252

6.6 x 9.9

PPAK5X6DFN5X6 (4 in 1)

PPAK5X6 (Clip)

G3
G4
Phase2GND

5.0 x 6.0

VDD
Phase1G1
VDD
G2Phase1DFN3X3 Asym Dual

SOT23-6L
DFN2X3

SOP8
PPAK5X6 Asym Dual
(Clip)WLCSP

SOT323

DFN2X2

Pin 1

PPAK3X3 Single & Dual

SOT23-3S

2.2 x 2.2

SOT523
SOT723

1.2 x 1.2

LFPAK5X6

Phase2

PPAK3X3

3.3 x 3.3

PPAK5X6 Single

PPAK5X6 Dual

PIN1

GND

SOP8

sTOLL

TO252

TO252-4L

TO251

SOT23-3S

DFN2X2
SOT883 Copper RDL

SOT883

1.0 x 0.6

2012
Potens Confidential Information

2013

2014

2015

2016

2017

2018

2019

2020

2021

2022

2023

2024

15

高効率パッケージ モータ用途向け

Top Cooling Design

Dual Cooling Design

Traditional Design
Al Heatsink

Al Heatsink

Thermal Vias

PCB

PCB
TOLT

PCB
DFN3X3、DFN5X6

DFN10X10 (multi-chip)

G3
G4
Phase2
GND

PIN1
VDD

Phase2
GND

80V / 100V MOSFET
Potens Confidential Information

Under development

Phase1G1
VDD
G2Phase1

40V / 80V / 100V MOSFET
Under development

16

製品群及び実績
Total MOSFET in System Application Provider

Product
Application

Consumer

Potens Confidential Information

Networking

PC

SMPS

Industry

Motor Driver

BMS

Lighting

Automotive
17採用実績：液晶TV・PC・NB
Low conduction and switching loss
❑ Improved dv/dt capability❑ Enhance BVDSS
❑

TV/PC

Synchronous Buck

Part No

PKG Type

VDS[V]

Ron(max)@10V [mΩ]

PDC3904Z
PDC3906Z
PDC3908AZ
PDC3908Z
PDC3964CZPDC3964ZPDEC3908Z
PDC3056CXPDC3094X
PDC3906X
PDC3908AX
PDC3908X
PDC3956CXPDC39F2BXPDEC3906X
PDD3906
PDD3908

PPAK3X3
PPAK3X3
PPAK3X3
PPAK3X3
PPAK3X3
PPAK3X3
PPAK3X3
PPAK5X6
PPAK5X6
PPAK5X6
PPAK5X6
PPAK5X6
PPAK5X6
PPAK5X6
PPAK5X6
TO252
TO252

30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30

3.8
6
7.2
7.8
3.7
4.5
8.5
3.5
4
5.5
7.2
7.8
6.2
2.95
5.5
6
9

Potens Confidential Information

Part No

PKG Type

VDS[V]

Ron(max)@10V [mΩ]

PDC4960X
PDC6976X-5
PDC6982BZ-5
PDC6986X-5
PDC0982BX
PDD0956
PDD0982B
PDC30N15BHX

PPAK5X6
PPAK5X6
PPAK3X3
PPAK5X6
PPAK5X6
TO252
TO252
PPAK5X6

40
65
65
65
100
100
100
150

2.8
4.2
4.4
11.5
11.2
115
10.8
51

Part No

PKG Type

VDS[V]

Ron(max)@10V [mΩ]

PDC3905Z
PDC3907Z
PDEC3907Z
PDC3901X
PDC3903X
PDD3907
PDC4959X

PPAK3X3
PPAK3X3
PPAK3X3
PPAK5X6
PPAK5X6
TO252
PPAK5X6

-30
-30
-30
-30
-30
-30
-40

15
20
20
3.3
8.5
20
5.8

Load switch

Part No

PKG Type

PDC3803R(Asym. Dual
N+N)

PPAK5X6VDS[V]

Ron(max)@10V [mΩ]

30

9.5

30

4.2

18

採用実績：電源・PD電源
Active Clamp / QR
Flyback

PMF08N60M(650V/1.2)PMF09N60M(650V/1)PMF10N60M(650V/0.68)PMF02N65M(650V/5)PMF04N65P(650V/2.4)PMF04N65M(650V/2.6)PMF08N65M(650V/1.2)PMF09N65M(650V/0.75)PMF10N65M(650V/0.7)PMF12N65P(650V/0.78)PMF12N65M(650V/0.75)PJF05N65N(650V/0.9)PJF08N65N(650V/0.58)PJF11N65N(650V/0.36)PJF14N65N(650V/0.32)PJF20N65N(650V/0.19)PJB20N65ND(650V/0.19)PMF04N70P(700V/2.7)PMF08N70M(700V/1.05)PMF11N70P(700V/1.1)Potens Confidential Information

PFC converter

LLC converter

SR circuit

Synchronous Buck

Load switch

PJP05N65N(650V/0.9)
PJP08N65N(650V/0.58)PJP11N65N(650V/0.36)PJP14N65N(650V/0.32)PJP20N65N(650V/0.19
PJF05N65N(650V/0.9)PJF08N65N(650V/0.58)PJF11N65N(650V/0.36)PJF14N65N(650V/0.32)PJF20N65N(650V/0.19)PJB20N65ND(650V/0.19)PJD05N65N(650V/0.9)
PJD08N65N(650V/0.58)PJD11N65N(650V/0.36)PJD14N65N(650V/0.32)PJP05N65N(650V/0.9)
PJP08N65N(650V/0.58)PJP11N65N(650V/0.36)PJP14N65N(650V/0.32)PJP20N65N(650V/0.19
PJF05N65N(650V/0.9)PJF08N65N(650V/0.58)PJF11N65N(650V/0.36)PJF14N65N(650V/0.32)PJF20N65N(650V/0.19)PJB20N65ND(650V/0.19)PJD05N65N(650V/0.9)
PJD08N65N(650V/0.58)PJD11N65N(650V/0.36)PJD14N65N(650V/0.32)PDC3964CZ(30V/3.7m)PDC3902X(30V/1.6m)PDC3960X(30V/2m)PDC3984X(30V/2.4m)PDC3990X(30V/1.4m)PDC3056CX(30V/3.5m)PDC40B4Z(40V/2.2m)PDC4906X40V/2.8m)PDC4964X(40V/3.2m)PDC40B4X(40V/2.5m)PDC49B8AX(40V/2.5m)PDC40B8AX(40V/1.6m)PDC49E8BX(40V/2m)PDC6902X(60V/4.6m)PDC6960X(60V/5.6m)PDC6990BX(60V/2m)PDC0978BX(100V/6.2m)
PDC09D8BX(100V/3.6m)
PDC09D8BHX(100V/4.1m)

PDC3904Z(30V/3.8m)PDC3964Z(30V/4.5m)PDC3964CZ(30V/3.7m)PDC3902X(30V/1.6m)PDC3960X(30V/2m)PDC3964X(30V/4.5m)PDC3984X(30V/2.4m)PDC3990X(30V/1.4m)PDC3094X(30V/4m)PDC3056CX(30V/3.5m)PDC40B4Z(40V/2.2m)PDC4906X40V/2.8m)PDC4964X(40V/3.2m)PDC40B4X(40V/2.5m)PDC49B8AX(40V/2.5m)PDC40B8AX(40V/1.6m)PDC49E8BX(40V/2m)PDC6902X(60V/4.6m)PDC6960X(60V/5.6m)PDC6990BX(60V/2m)PDB3907Z(-30V/18m)PDC3903Z(-30V/8.5m)PDC3903AZ(-30V/8.2m)PDC3905Z(-30V/15m)PDC3907Z(-30V/20m)PDC3963CZ(-30V/10m)PDC3901X(-30V/3.3m)PDC3903X(-30V/8.5m)PDC3907X(-30V/19m)PDC3907CX(-30V/17.8m)PDC3959X(-30V/4.5m)PDC3963CX(-30V/10m)PDC3983X(-30V/5.9m)PDC4903Z(-40V/14m)PDC4963Z(-40V/15m)PDC4903X(-40V/13m)PDC4959X(-40V/5.8m)PDC4963X(-40V/15m)
PDC6901X(-60V/8.6m)PDC6903X(-60V/24m)
19採用実績：AI/Data Server用電源
Totem pole bridgeless

PFC converter

PSFB converter

LLC converter

PJX50N60N(600V/0.07)
PJX30N60N(600V/0.115)PJP11N65N(650V/0.36)PJP14N65N(650V/0.32)PJP20N65N(650V/0.19)PJF11N65N(650V/0.36)PJF14N65N(650V/0.32)PJF20N65N(650V/0.19)PEB15GC65HDS(650V/0.24)PJP11N65N(650V/0.36)PJP14N65N(650V/0.32)PJP20N65N(650V/0.19)PJF11N65N(650V/0.36)PJF14N65N(650V/0.32)PJF20N65N(650V/0.19)PJB20N65ND(650V/0.19)PCP06S65Z(650V, 6A)
PCP10S65Z(650V, 10A)
PCP15S65Z(650V, 15A)
PCP05S120Z(1200V, 5A)
PCP12S120Z(1200V, 12A)
PCX15S65Z(650V, 15A)
PCX20S65Z(650V, 20A)
PCX20S120Z(1200V, 20A)
PCD08S65Z(650V 8A)
PCH08S65Z(650V, 8A)
PCH10S65Z(650V, 10A)

PJP11N65N(650V/0.36)PJP14N65N(650V/0.32)PJP20N65N(650V/0.19)PJF11N65N(650V/0.36)PJF14N65N(650V/0.32)PJF20N65N(650V/0.19)
PJX30N60N(600V, 0.115)PJX50N60N(600V, 0.7)

PJP05N65N(650V/0.9)
PJP08N65N(650V/0.58)PJP11N65N(650V/0.36)PJP14N65N(650V/0.32)PJP20N65N(650V/0.19)PJF05N65N(650V/0.9)PJF08N65N(650V/0.58)PJF11N65N(650V/0.36)PJF14N65N(650V/0.32)PJF20N65N(650V/0.19)PJB20N65ND(650V/0.19)PJD05N65N(650V/0.9)
PJD08N65N(650V/0.58)PJD11N65N(650V/0.36)PJD14N65N(650V/0.32)PJX30N60N(600V, 0.115)PJX50N60N(600V, 0.7)Potens Confidential Information

20

採用実績：バッテリーパック
High efficiency❑ Low leakage Current❑

BMS
Battery Voltage and Current Protection IC.
Part No

PKG Type

VDS[V]

Ron(max)@4.5V [mΩ]

PDC2306AZ
PDC2306Z
PDC2604Z
PDN2314S
PDC3056CXPDC3904Z
PDC3906Z
PDC3908Z
PDC3910Z
PDC3960X
PDC3964X
PDC3964Z
PDC3984X
PDD3960
PDN3612S
PDN3914S
PDC4904Z

PPAK3X3
PPAK3X3
PPAK3X3
SOT23-3S
PPAK5X6
PPAK3X3
PPAK3X3
PPAK3X3
PPAK3X3
PPAK5X6
PPAK5X6
PPAK3X3
PPAK5X6
TO252
SOT23-3S
SOT23-3S
PPAK3X3

20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
40

4.6
4.9
3.5
25
4.9
5.5
9
12
18
2.7
6.4
6.4
3.3
3.4
36
45
7

Potens Confidential Information

Develop by

Part No

PKG Type

VDS[V]

Ron(max)@10V [mΩ]

PDC6990BX
PDD6902
PDEN2N7002S
PDS6904
PDC6982BX-5
PDD6986B-5
PDC09D8BHX
PDD0960
PDEN09A8S
PDN0910S

PPAK5X6
TO252
SOT23-3S
SOP8
PPAK5X6
TO252
PPAK5X6
TO252
SOT23-3S
SOT23-3S

60
60
60
60
65
65
100
100
100
100

2
4.5
3000
12
4.4
8.8
4.1
17
5500
200

Part No

PKG Type

VDS[V]

Ron(max)@10V [mΩ]

PDC3903X
PDC3903AZ
PDN3611S
PDS3903
PDD6901
PDS6903
PDD0959
PDN0953S
PDN02P15S

PPAK5X6
PPAK3X3
SOT23-3S
SOP8
TO252
SOP8
TO252
SOT23-3S
SOT23-3S

-30
-30
-30
-30
-60
-60
-100
-100
-150

8.5
8.2
65
9.5
9.2
30
45
650
750

.

21

採用実績：モータ駆動
Combo type❑ High current capability❑ Strong EAS❑

Part No

Motor DriverPart No

PKG Type

VDS[V]

Ron(max)@10V [mΩ]

PDC3908Z
PDC3944CZPDC6990BHX
PDD6902
PDS6904
PDD6986B-5
PDC0986BX
PDD0956
PMD04N65P

PPAK3X3
PPAK3X3
PPAK5X6
TO252
SOP8
TO252
PPAK5X6
TO252
TO252

30
30
60
60
60
65
100
100
650

7.8
7.9
2.1
4.5
12
8.8
22
115
2400

Part No

PKG Type

VDS[V]

Ron(max)@10V [mΩ]

PDC3903Z
PDS3903
PDD6901
PDS6903

PPAK3X3
SOP8
TO252
SOP8

-30
-30
-60
-60

8.5
9.5
9.2
30

PDC3812V(Dual N+N)
PDC0810T(Dual N+N)
Part No
PDC3708T(Dual N+P)
PDC3712T(Dual N+P)
PDC3714T(Dual N+P)
PDS3710(Dual N+P)
PDS4701(Dual N+P)
PDS6701(Dual N+P)

PKG Type
PPAK3X3
PPAK5X6

PKG Type
PPAK5X6
PPAK5X6
PPAK5X6
SOP8
SOP8
SOP8

TOLL : 10*12*2.3

VDS[V]

Ron(max)@10V [mΩ]

30

20

100

185

VDS[V]

Ron(max)@10V [mΩ]

30
-30
30
-30
30
-30
30
-30
40
-40
60
-60

9
20
18
48
25
64
13
30
32
40
30
48

F-bridge : 5*6*0.6

6 in 1 : 6*6*0.6

PDB3006HX4H

PackageType
4 IN 1

PDB3008HX4H

4 IN 1

PDB3010HX4H

4 IN 1

PDB3012HX4H

4 IN 1

PDB3008HF6H

6 IN 1

PDB3012HF6H

6 IN 1

PDB40B8AF6H

6 IN 1

Part No.

H-bridge : 35*40*5.3

Potens Confidential Information

22

採用実績：車載電装品
AEC-Q101 qualified and verification❑ Family approval arrangement❑ Wafer resource pre-reservation for automotive application❑

Automotive
UMOS
P-ch

Package

UMOS
N-ch

TO263

Part No

SGT
N-ch

USB
ChargerPotens Confidential Information

30V

Wireless
Charger

40V
LEDLighting

60V

65V

100V

TO252

PKG Type VDS[V]SOP8

PPAK5X6

Ron(max)
[mΩ]

Cfg.

Type

PDC6986Z-5M

PPAK3x365

8.3SingleN

PDH6990BH-M

TO263

60

24

SingleN

PDC4903Z-M

PPAK3x3-40

14SingleP

PDEC3908Z-M

PPAK3x330

8.5SingleP

BVDSS PDC4806T-M

PPAK5x6

40

9

Dual

N+N

PDS3808-M

SOP8

30

11

Dual

N+N

PDD4903-M

TO252

-40

15

SingleP

L CissN-ch
20V

PPAK3X3

Releasing soon

HUD
Application

Aircon23

車載アプリケーション
Keylock System

Lidar System

HUD System

Backdoor System
DVR System

USB Charger

Instrument clusters

LED Headlight

Power Window System

Aircon fan system

Slide Door System
Inverter system

Oil Pump Systemregenerative braking system

Potens Confidential Information

IoV system

Battey Cooling System24

モジュール製品(200V)
T2 Module

SOT227200V MOS

N2 Module
200V MOS

200V MOS◆ 200V Low RDS(ON) and High Current MOSFET Module
SOT227 – 4.8mΩ / 230A
T2 Module – 4.8mΩ / 250A
N2 Module – 2.5mΩ / 350A

◆ High Thermal Conductivity Assembly Design
Potens Confidential Information

25

Dr.MOS AIサーバ用途向け
Dr.MOSLFPAK5x6

Key Feature

Key Feature

Integrated Power Stage Solution
Low side MOS

Driver IC

Driver IC

sTOLL

Ultra Low On ResistanceLow side MOS•

Under 1mΩ at 40V / 60V•

Low parasitic inductance•Best in class performance

Thermal PerformanceHigh side MOS

High side MOS

High Power Density•

Include 30V MOSFET and driver IC•

5 mm x 5 mm package for 60 A applications•

Reduce the PCB size•

Copper clip technology•

High power density

High Current Rating•

Up to 300A current rating•High current and short circuit capability

Under development

Potens Confidential Information

26

IGBT製品ラインナップ
1. Support for IGBT
2. Voltage Range : 600V ~1250V and above
3. Application: Industrial application, Automotive

Potens Confidential Information

P/N

Package

VCE

IC (100℃)

FRED

PBY100F65Z

SOT227

650V

100A

YES

PBY75F125Z

SOT227

1250V

75A

YES

PBY100F125Z

SOT227

1250V

100A

YES

PBY150F125Z

SOT227

1250V

150A

No

PBY100F65W2

IAP Half Bridge

650V

100A

YES

PBY75F125W2

IAP Half Bridge

1250V

75A

YES

PBY100F125W2

IAP Half Bridge

1250V

100A

YES

PBY150F125W2

IAP Half Bridge

1250V

150A

YES

27

SiC,GaN製品対応パッケージ
Products
GaN SBDSiC SBD

Features
Common/Standard
TO220/D2PAK 5A~12A

Common/Standard
TOLL/QFN 32m ~105m 650V

SiC MOSFETGaN MOSFET

Potens Confidential Information

Small size
TOLL/QFN 4m ~11m 50V >100V

28

Sic-MOSFETラインナップ➢ Silicon Carbide MOSFET

TO247-4

P/N

Package

BVDSS

RDSON

PDX017C065Z

TO247-3

650V

17mΩ

PDX030C065Z

TO247-3

650V

30mΩ

PDX050C065Z

TO247-3

650V

50mΩ

PDX018C120Z

TO247-3

1200V

18.5mΩ

PDX030C120Z

TO247-3

1200V

30mΩ

PDX040C120Z

TO247-3

1200V

40mΩ

PDX080C120Z

TO247-3

1200V

80mΩ

PDX150C120Z

TO247-3

1200V

150mΩ

PDX020C170Z

TO247-3

1700V

20mΩ

PDX040C170Z

TO247-3

1700V

40mΩ

PDT080C120Z

TOLL

1200V

80mΩ

PDX018C120Z-F

TO247-4

1200V

18.5mΩ

PDX030C120Z-F

TO247-4

1200V

30mΩ

PDX040C120Z-F

TO247-4

1200V

40mΩ

PDX080C120Z-F

TO247-4

1200V

80mΩ

Potens Confidential Information

D

S

S

G

Drain

Power Source

Driver Source

Gate

TOLL

TO247-329

Sic-SBDラインナップ➢ Silicon Carbide Schottky Barrier Diode

650V
1200V
PCX20SD065R

TO247-3L

PCX20SD120R

TO247-2L

PCX16S065R-T
PCX15S120R-T

PCX20S065R-T
PCX20S120R-T

PCH16S065R

PCH20S065R

TO263-2L

PCH02S065R

PCH04S065R

PCH06S065R

PCH08S065R

PCH10S065R

TO220F-2L

PCF02S065R

PCF04S065R

PCF06S065R

PCF08S065R

PCF10S065R

PCP02S065R

PCP04S065R

PCP06S065R

PCP08S065R

PCP10S065R

PCP16S065R

PCP20S065R

PCP02S120R

PCP04S120R

PCP06S120R

PCP08S120R

PCP10S120R

PCP15S120R

PCP20S120R

PCD02S065R

PCD04S065R

PCD04S065R

PCD08S065R

PCD10S065R

PCD02S120R

PCD04S120R

PCD06S120R

PCD08S120R

PCC04S065XR

PCC06S065XR

PCC08S065XR

PCC10S065XR

4A

6A

8A

10A

15A 16A

20A

TO220-2L
TO252-2L
PPAK5X6

2A
Potens Confidential Information

PCX40SD065R
PCX30SD120R

PCX40SD120R
PCX40S065R-T
PCX40S120R-T

30A

40A

PCX50S065R-T

50A

Notes : Products in blue text are under development 30

Sic製品ロードマップ
YearProduct Type

SiC
SBD

2023

2024

Voltage

2H

1H

650V

2A/4A/6A
8A/10A/16A
20A/30A/40A

50A

1200V

2A/4A/6A
8A/10A/15A
20A/30A/40A

100A

1H

2A/4A/6A
8A/10A/15A
20A/30A/40A

650V

1700V
2000V

2026
2H

1H

2A/4A/6A
8A/10A/15A
20A/30A/40A

Vf<1.2V

Vf<1.3V

10A/20A/50A

2H

Vf<1.2V

10A/20A

1A/7A
17mΩ
30mΩ
50mΩ

750V
1200V

Vf<1.3V
10A/20A/50A

3300V

Potens Confidential Information

2H

1700V
2000V

SiC
MOSFET

2025

18mΩ

30mΩ/ 40mΩ/ 60mΩ
80mΩ/ 150mΩ/ 220mΩ

14mΩ/ 20mΩ

18.5mΩ/ 30mΩ
40mΩ/ 80mΩ
150mΩ
20mΩ/ 40mΩ/ 800mΩ

100mΩ/ 200mΩ

ES

DevelopPlanning

31

GaN製品ロードマップ
2022
No.

2023

2024

Implementation
Q4

1

650V/15A/240mΩ
Case code D-mode GaN
TO220

2

650V/15A/240mΩ
Case code D-mode GaN
DFN8X83

650V/6AGaN Diode
TO220

4

D-mode GaN HEMT+Gate Driver

Q2

Q3

Q4

Q1

Q2

ES

WS

WS

ES

WS

ES

▓ ES: Engineering Sample

Q3

CS

ES

WS

▓ WS: Working Sample
Potens Confidential Information

Q1▓ CS: Commercial Sample
32

ICカテゴリー製品

Potens Confidential Information

33

応用技術サポート

開発技術 AAEチーム
Chief Strategy Officer(Quality Proj. Leader)

Application & Advanced
Eng. Director
Tim Chen
Ph. D.

Alan Huang
Ph. D.
Joined invent events with >100
patents among engineering fields

Application & Advanced
Sr. Manager

Joined invent events with
>30 patents

1996~2006: ITRI Advanced

1999~2002 : Taipei Rapid Transit

Project Member

Corporation Engineer

Application & Advanced
Sr. Manager

Phoenix Lee
Ph. D. candidate
Joined invent events with
>30 patents
2001~2007 : COTEK Electronic
R&D Engineer

Dave TsaiEng. Bachelor

Joined invent events with
>4 patents & 5 published papers

1998~2006 : Phihong Electronic

2004~2005 : National Skill Contest

R&D Engineer

2002~2003 : Procomp Informatics

2007~2011 : Flextronics(Power

2007~2011 : Flextronics(Power

Systems) R&D Director

EV Department Senior

Systems) Advanced R&D

Systems) Electronic R&D

EngineerEngineerEngineer

Advanced Tech. Center G.M.
2013~2020: Chicony (CPT) R&D
Head A.V.P.

2004~2012 : Tungnan University

2011~2020 : Chicony (CPT)EE Department AssistantEngineering Project Manager

Professor(E.P.M.)

2020~Now : POTENS Chief

2012~2020 : Chicony (CPT) Japan

Strategy Officer

Power Business Senior

2020~Now : POTENS Application& Advanced Eng. Sr. Manager

Manager
2020~Now : POTENS Application &Ted YuEng. Master

Joined invent events with
>10 patents

2006~2011 : Flextronics (Power2011~2013: Chicony (Group)

Application & Advanced
Deputy Manager

2012~2020 : Chicony (CPT) PowerBusiness Project Manager
2023~Now : POTENS Application &Advanced Eng. Sr. Manager

1st Place(Recommended to
NTNU)
2006~2011 : Flextronics(Power
Systems) Assistant Engineer
2014~2019 : Chicony (CPT)
Advanced Verification Design
Engineer2019~Now : POTENS Application& Advanced Eng. Deputy
Manager*PMP certification 2019

Advanced Eng. Director
Potens Confidential Information

35

お客様ニーズに応じた技術サポート
各設計段階のニーズに応じた技術を提供
電源回路等のノウハウ提供

電源回路等のノウハウ提供

AAEチームが保有する回路設計等のノウハウを提供する事でデバイスをお使い頂くお客様の新規設計のスピードアップをサポーします。
既存のトレンチ、プランナーMosFet、アナログICを使った回路はもとより次世代半導体製品に向けたサポートも実施します。

応用回路別に最適なデバイスを推奨

応用回路別に最適なデバイスを推奨

応用回路での解析サポート

EMCのデバッグサポート

各種電源回路に最適な部品をAAEチームが選定し、選定理由を含めてお客様回路に最適なデバイスを推奨します。
既存部品からの置き換え時は、回路構成、乗数含めて情報を頂ける場合は、当社でシミュレーションした結果を共有いたします。

応用回路の動作解析・EMCデバッグサポート
部品単体だけではなく、お客様の応用回路の動作解析、各パラメータ解析のサポートをします。
解析結果をお客様と共有した上で要望に応じて目指すスペックレベルへ改定するサポートをいたします。

解析レポート各種提供

他社品とのベンチマーク解析等
レポート各種提供
Potens Confidential Information

上記の各種解析レポート、他社とのベンチマークレポートを提供します。
必要に応じて当社で事前に各スペックをシミュレーションする事で検討結果をお客様が事前に予測でき、お客様の切替検討の時間を可能な限り短縮する事をめざします。

36

アプリケーションの解析サポート
SR application(映像製品向け)

Vcore application(マザーボード向け)

部品ストレステスト

サーマルテスト

電源効率改善電力損失改善安全動作領域（SOA） 確認

発熱低減確認Potens Confidential Information37信頼性試験設備 HTRB/HTGB/H3TRB/HAST
Item

Tests for the Product Qualification
Thermal Chamber

VDS

HTRB

Test condition:
VDS = 80% Max rating
VGS = 0 V
150°C/175°C, 1000 hours

Heater

Thermal Chamber

HTGB

Test condition:
VGS = 80% Max rating
VDS = 0 V
150°C/175°C, 1000 hours

VGS

HeaterHASTchamber

Environmental Chamber

VDS

H3TRB

Test condition:
VDS = 80% Max rating
VGS = 0 V
85°C, 85%rH, 1000 hours

HeaterPotens Confidential Information

38

製品解析設備１
Reverse Recovery Tester

•
•

Trr
Qrr

Potens Confidential Information

•
•
•
•
•
•
•

DC Parameter Tester

Inductive Parametric Tester

IDSS
IGSS
Breakdown Voltage
Vgs(th)
Rdson
VSD
Gfs

•
•

Single-Pulse Avalanche
Stress (EAS)
Repetitive Avalanche
Energy (EAR)

Power Device Analyzer

•
•
•
•
•
•
•

Breakdown Voltage Curve
Rdson - Vgs Curve
IGSS - Vgs Curve
IDSS - Vds CurveVSD Cruve
Ciss / Coss / Crss Curve
Qg / Qgs / Qgd Curve39

製品解析設備２
Parametric Curve Tracer

•
•
•
•
•

Breakdown Voltage Curve
Rdson Curve
IGSS Curve
IDSS CurveVSD Curve

Potens Confidential Information

Gate Charge Tester

•
•
•
•
•

Qg
Qgs
Qgd
Rg
Vgs(th)Electrical Microscope••

Wafer patternobservation
Epi fluoresence
observation

Chamber••Curve of electricalcharacteristics with 150°C& 175°C.
Customer request
condition checking

40動作不良品解析
Co-work with,

Electrical Characteristics Measurement• I-V Curve Measurement• Auto Curve Tracer (ACT)• Probe Measurement• TLP Measurement of ESD Protection
Devices• …

,
Non-Destructive Analysis• Non-Destructive Analysis• 3D OM• Scanning Acoustic Tomography (SAT)• X-ray Inspection (2D X-ray)• High Resolution 3D X-Ray Microscope• …

Sample Preparation• IC / MOSFET De-capsulation• IC/ MOSFET Delayer• Cross-Section & Backside Polish• Ion Beam Cross-Section Polisher (CP)• …
Potens Confidential Information

41

技術のオープンイノベーション(BCPM)

Potens Confidential Information

42

EMC電磁波ノイズ デバッグサポート

Reliability Testing: BCI +EFT +ESD+PFMF

Potens Confidential Information

43

カスタム電源設計事業

Potens Confidential Information

44

Potens’ MOSFETs