GaAs MMIC mmWave Tuner Mixer

MM1-1467H

1. Device Overview
1.1 General Description

DieMM1-1467H is a GaAs MMIC double balanced mixer with abroad IF bandwidth and low conversion loss. This mixer is ideal for
applications which require broad IF bandwidths with operation atmmWave frequencies. The MM1-1467H is available as both wire
bondable die and as connectorized modules. The -1 option for die
is available for this mixer. Both the -1 and -2 mixers areelectrically identically but with mirrored footprints.

1.2 FeaturesModule

1.3 Applications
 Test and measurement equipment

High LO to RF isolation
Broad IF bands covering critical
Ku & K band
Flat IF response through K band
High linearity



Fixed RF up converters
Electronic warfare equipment

1.4 Functional Block Diagram

1.5 Part Ordering Options 11

Part
NumberDescription

Package

MM1-1467HCH-2

Wire bondable dieCH(option -2)

MM1-1467HCH-1

Wire bondable dieCH(option -1)

MM1-1467HUB

Connectorized
moduleUB

Green
Status

RoHS

Product
Lifecycle

ExportClassification

Active

EAR99

Active

EAR99

Active

EAR99

Refer to our website for a list of definitions for terminology presented in this table.

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1.

Table of Contents

3.6.2 Typical Performance Plots: LO
Harmonic Isolation............................. 9

Device Overview ............................... 1

3.6.3 Typical Performance Plots: Tuner
Mixer ............................................. 10

1.1 General Description ........................ 1

3.6.4 Typical Spurious Performance:
Down-Conversion ............................ 11

1.2 Features ....................................... 1

3.6.5 Typical Spurious Performance: UpConversion ..................................... 11

1.3 Applications ................................... 1
1.4 Functional Block Diagram ................ 1
1.5 Part Ordering Options..................... 1
2.

3.

MM1-1467H

4.

Die Mounting Recommendations ....... 12Port Configurations and Functions ...... 3

4.1 Mounting and Bonding
Recommendations .............................. 12

2.1 Port Diagram ................................. 3

4.2 Handling Precautions .................... 12

2.2 Port Functions ............................... 3

4.3 Bonding Diagram .......................... 13Specifications ................................... 4
3.1 Absolute Maximum Ratings .............. 4
3.2 Package Information ....................... 4
3.3 Recommended Operating Conditions . 4
3.4 Sequencing Requirements ............... 4
3.5 Electrical Specifications .................. 5

5.

Mechanical Data ............................. 14
5.1 CH Package Outline Drawing (Option 2) ..................................................... 14
5.2 CH Package Outline Drawing (Option 1) ..................................................... 14
5.3 UB Package Outline Drawing ......... 15

3.6 Typical Performance Plots ............... 6
3.6.1 Typical Performance Plots: IP3 .. 8

Revision History
Revision Code-Revision Date
May 2019

Copyright © 2019 Marki Microwave, Inc.

CommentDatasheet Initial Release

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2. Port Configurations and Functions
2.1 Port Diagram
A top-down view of the MM1-1467HCH-2 outline drawing is shown below to the left. The
MM1-1467HCH-1 is shown below to the right. Both mixers are electrically identical andhave mirrored footprints. The MM1-1467H has the input and output ports given in Port
Functions. The MM1-1467H can be used in either an up or down conversion.
MM1-1467HCH-2

MM1-1467HCH-1

2.2 Port Functions
PortFunction

Description

Port 1LO(Configuration A)
RF(Configuration B)

Port 1 is DC open for the CH and UBpackages.

Port 2IF

Port 2 is diode connected for the CH
and UB package.

Port 3

RF(Configuration A)
LO(Configuration B)

Port 3 is DC open for the CH and UB
packages.

GroundCH package ground path is provided
through the substrate and ground bondpads. UB package ground provided
through metal housing and outer coax
conductor.

GNDCopyright © 2019 Marki Microwave, Inc.

Equivalent Circuitfor Package

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3. Specifications
3.1 Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to thedevice. If these limits are exceeded, the device may be inoperable or have a reducedlifetime.
Parameter

Maximum Rating

Units

Port 1 DC Current

N/AmA

Port 2 DC Current

TBDmA

Power Handling, at any Port

+27dBmOperating Temperature-55 to +100°C

Storage Temperature-65 to +125ºC

3.2 Package Information
Parameter

Details

RatingESD

Human Body Model (HBM), per MIL-STD-750, Method 1020

1A

WeightUB Package

16 g

3.3 Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device shouldbe operated, to guarantee the performance given in Electrical Specifications Operating
outside these limits may not necessarily cause damage to the device, but theperformance may degrade outside the limits of the electrical specifications. For limits,
above which damage may occur, see Absolute Maximum Ratings.
MinNominalMax

UnitsTA, Ambient Temperature-55+25+100°CLO Input Power+11+20dBm

3.4 Sequencing Requirements
There is no requirement to apply power to the ports in a specific order. However, it isrecommended to provide a 50Ω termination to each port before applying power. This is apassive diode mixer that requires no DC bias.

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3.5 Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system. Typical data shown isfor the connectorized UB package mixer used with a +15 dBm sine wave LO.
Specifications shown for configuration A (B).
Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. All bare die are 100% DC tested and visuallyinspected.

Parameter

Test ConditionsMinTypicalMax

RF (Port 3) Frequency Range

1467

LO (Port 1) Frequency Range

1467

I (Port 2) Frequency Range

7(8)9(10.5)

LO to RF

RF/LO = 14 - 67 GHz

53

LO to IF

IF/LO = 14 - 67 GHz

33

Noise Figure (NF) 3

RF to IF
Input IP3 (IIP3)

8.5

RF/IF = 14 - 67 GHz

48

RF/LO = 14 - 67 GHz
I = 0.091 GHz+17.5(+19.5)+9(+9)

Input 1 dB Gain Compression
Point (P1dB)

GHz21

RF/LO = 14 - 67 GHz
I = 0.091 GHz
RF/LO = 14 - 67 GHz
I = 0.091- 21 GHz
RF/LO = 14 - 67 GHz
I = 0.091- 21 GHz

Conversion Loss (CL) 2

Isolation

0Units12(13)

dBdB

dBdBm
dBm

2

Measured as a down converter to a fixed 91 MHz IF. Unless otherwise stated, frequency
conversion done using a highside LO.
3Mixer Noise Figure typically measures within 0.5 dB of conversion loss for IF frequencies greaterthan 5 MHz.
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MM1-1467H

3.6 Typical Performance Plots

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MM1-1467H

3.6.1 Typical Performance Plots: IP3Copyright © 2019 Marki Microwave, Inc.

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MM1-1467H

3.6.2 Typical Performance Plots: LO Harmonic Isolation

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3.6.3 Typical Performance Plots: Tuner Mixer
Tuner mixer performance plots are taken with the following test conditions and frequency plan:Parameter

Start

IF Input Frequency
IF Input Power0

LO Input Frequency

24NominalStopUnits

24

GHzdBm48GHz-10LO Input Power+15dBm

RF Output Frequency

24GHzCopyright © 2019 Marki Microwave, Inc.

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3.6.4 Typical Spurious Performance: Down-Conversion
Typical spurious data is provided by selecting RF and LO frequencies (± m*LO ± n*RF) within theRF/LO bands, to create a spurious output within the IF band. The mixer is swept across the fullspurious band and the mean is calculated. The numbers shown in the table below are for a -10dBm RF input. Spurious suppression is scaled for different RF power levels by (n-1), where “n” is
the RF spur order. For example, the 2RF x 2LO spur is 67 dBc for a -10 dBm input, so a -20dBm RF input creates a spur that is (2-1) x (-10 dB) lower, or 77 dBc.
Typical Down-conversion spurious suppression (dBc): Config A (B)-10 dBm
RF Input

0xLO

1xLO

2xLO

3xLO

4xLO

5xLO

1xRF

40 (25)

Reference

40 (35)21 (16)45 (35)N/A

2xRF

86 (93)50 (66)

67 (74)61 (69)68 (72)64 (73)3xRF

98 (90)58 (61)84 (84)66 (74)86 (85)63 (69)4xRF

124 (122)

89 (111)102 (110)98 (115)111 (119)101 (114)

5xRF

N/A

117 (130)

124 (118)

107 (120)

124 (127)109 (121)

3.6.5 Typical Spurious Performance: Up-Conversion
Typical spurious data is taken by mixing an input within the IF band, with LO frequencies(± m*LO ± n*IF), to create a spurious output within the RF output band. The mixer is swept
across the full spurious output band and the mean is calculated. The numbers shown in the tablebelow are for a -10 dBm IF input. Spurious suppression is scaled for different IF input power levels
by (n-1), where “n” is the IF spur order. For example, the 2IFx1LO spur is typically 79 dBc for a 10 dBm input with a sine-wave LO, so a -20 dBm IF input creates a spur that is (2-1) x (-10 dB)
lower, or 89 dBc.
Typical Up-conversion spurious suppression (dBc): Config A (B)-10 dBm
RF Input

0xLO

1xLO

2xLO

3xLO

4xLO

5xLO

1xIF

40 (25)

Reference

40 (34)17 (14)42 (34)N/A

2xIF

70 (70)79 (79)68 (71)74 (76)57 (67)77 (74)

3xIF

89 (80)61 (69)82 (79)65 (64)77 (72)54 (58)4xIF

109 (111)106 (109)106 (108)105 (104)

89 (99)102 (105)

5xIF

121 (119)105 (110)120 (121)

103 (107)

114 (112)

98 (104)

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MM1-1467H

4. Die Mounting Recommendations
4.1 Mounting and Bonding Recommendations
Marki MMICs should be attached directly to a ground plane with conductive epoxy. The
ground plane electrical impedance should be as low as practically possible. This will
prevent resonances and permit the best possible electrical performance. Datasheet
performance is only guaranteed in an environment with a low electrical impedance ground.
Mounting - To epoxy the chip, apply a minimum amount of conductive epoxy to themounting surface so that a thin epoxy fillet is observed around the perimeter of the chip.
Cure epoxy according to manufacturer instructions.
Wire Bonding - Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire.
Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding
force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should bestarted on the chip and terminated on the package or substrate. All bonds should be as
short as possible <0.31 mm (12 mils).
Circuit Considerations – 50 Ω transmission lines should be used for all high frequency
connections in and out of the chip. Wirebonds should be kept as short as possible, withmultiple wirebonds recommended for higher frequency connections to reduce parasiticinductance. In circumstances where the chip more than .001” thinner than thesubstrate, a heat spreading spacer tab is optional to further reduce bondwire length andparasitic inductance.

4.2 Handling Precautions
General Handling
Chips should be handled with care using tweezers or a vacuum collet. Users should takeprecautions to protect chips from direct human contact that can deposit contaminants,
like perspiration and skin oils on any of the chip's surfaces.
Static Sensitivity
GaAs MMIC devices are sensitive to ESD and should be handled, assembled, tested, andtransported only in static protected environments.
Cleaning and Storage: Do not attempt to clean the chip with a liquid cleaning system or
expose the bare chips to liquid. Once the ESD sensitive bags the chips are stored in areopened, chips should be stored in a dry nitrogen atmosphere.

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MM1-1467H

4.3 Bonding Diagram

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MM1-1467H5. Mechanical Data
5.1 CH Package Outline Drawing (Option -2)

1.
2.

CH Substrate material is 0.004 in thick GaAs.
I/O trace finish is 4.2 microns Au. Ground plane finish is 5 microns Au.

5.2 CH Package Outline Drawing (Option -1)

3.
4.

CH Substrate material is 0.004 in thick GaAs.
I/O trace finish is 4.2 microns Au. Ground plane finish is 5 microns Au.

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MM1-1467H

5.3 UB Package Outline Drawing

Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice.
Marki Microwave makes no warranty, representation, or guarantee regarding the suitability of its products for any
particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use or application of anyproduct.

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