C5909

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Silicon NPN transistor epitaxial type
C5909
[ Applications ]Battery powered circuit
Strobe[ Feature ]High DC gain hFE= 500 (Min.) at VCE= 2V, IC= 0.1A
Low collector saturation voltage VCE(sat)= 0.4V (Max.) at IC= 4A, IB= 50mA

[ Absolute maximum ratings (Ta=25C) ]Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)Collector current (Pulse)
Junction temperature
Storage temperature

Symbol Maximum ratings
VCBO
12VCEO
12VEBO
5IC4ICP10Tj
150Tstg-55 to 150UnitVVVAACC[ Electrical characteristics (Ta=25C) ]Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain 1
DC current gain 2
DC current gain 3

Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE 1
hFE 2
hFE 3

Collector-emitter saturation voltage 1
Collector-emitter saturation voltage 2
Collector-emitter saturation voltage 3
Collector-emitter saturation voltage 4
Collector-emitter saturation voltage 5

VCE(sat) 1

Base-emitter saturation voltage
Base-emitter on voltage
Transition frequency
Collector output capacitanceCollector input capacitanceTurn on time
Turn off time

VBE(sat)VBE(on)fTCobCibtontoff

VCE(sat) 2
VCE(sat) 3
VCE(sat) 4
VCE(sat) 5

Min.
1212
5500
400
100150-

Typ.
40
240
40500

Max.
100
100
0.04
0.06
0.18
0.35
0.4
1.1
1.0-

Unit
VV
V
nAnA
V
V
V
V
V
V
V
MHz
pF
pF
nsns

Conditions
IC= 100uA, IE= 0A
IC= 10mA, IB= 0A
IE= 100uA, IC= 0A
VCB= 10V, IE= 0AVEB= 4V, IC= 0A
VCE= 2V, IC= 0.1A
VCE= 2V, IC= 3A
VCE= 2V, IC= 10A
IC= 0.1A, IB= 1mA
IC= 0.1A, IB= 0.5mA
IC= 1A, IB= 50mA
IC= 3A, IB= 20mA
IC= 4A, IB= 50mA
IC= 3A, IB= 20mA
VCE= 2V, IC= 3A
VCE= 5V, IE= -50mA
VCB= 10V, f = 1MHz, IE= 0A
VEB= 0.5V, f = 1MHz, IC= 0A

VCC= 10V, IC= 500mA
IB1= -IB2= 50mA

Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.

PHENITEC SEMICONDUCTOR Corp.

No. C5909-20071001- 1/2 -C5909

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Fig.1 IC - VBE(on)at VCE= 2V,Ta= 25C

Fig.2 hFE - IC
at VCE= 2V, Ta= 25C

10Fig.3 VCE(sat) - IC
at IC/IB= 20, Ta= 25C
10.1

0.01

1000

1000.001
0.4

0.8

1.2

Collector-emitter saturation
voltage : VCE(sat) (V)1DC current gain : hFE

100.001

1.6

Base-emitter on voltage: VBE(on) (V)

Fig.4 VCE(sat) - IC
at IC/IB= 80, Ta= 25C

0.10.010.1

110101

Fig.5 VCE(sat) - IC
at IC/IB= 100, Ta= 25C

Fig.6 VCE(sat) - IC
at IC/IB= 150, Ta= 25C
10.010.1

1100.10.01
0.001

0.010.1

1

Collector current : IC (A)Fig.7 VCE(sat) - IC
at IC/IB= 200, Ta= 25C

Fig.8 VBE(sat) - IC
at IC/IB= 150, Ta= 25C

Fig.9 fT - IE
at VCE= -5V, Ta= 25C

100.01
0.1
110Collector current : IC (A)

1000

10100

10.10.001

Fig.10 Cob - VCB
at f= 1MHz, Ta= 25C1000

10Collector current : IC (A)Collector current : IC (A)

0.1

0.01
0.001

0.1

Collector current : IC (A)

0.1

0.01
0.001

0.01

Collector current : IC (A)Base-emitter saturation
voltage : VBE(sat) (V)Collector-emitter saturation
voltage : VCE(sat) (V)1

Transition frequency: fT (MHz)

0.01
0.001

10.01
0.1
1
10
Collector current : IC (A)100.001

0.01
0.1
Emitter current : IE (A)1

Fig.11 Cib - VEB
at f= 1MHz, Ta= 25C

1000

Collector input
capacitance : Cib (pF)Collector output
capacitance : Cob (pF)

0.1

0.01

1
Collector-emitter saturation
voltage : VCE(sat) (V)Collector-emitter saturation
voltage : VCE(sat) (V)

10.01

0.1

0.001
0.001

Collector-emitter saturation
voltage : VCE(sat) (V)Collector current : IC (A)

10000

100

100

100.1

1

10

Collector-base voltage : VCB (V)

0.1

1
10
Emitter-base voltage : VEB (V)

1001
PHENITEC SEMICONDUCTOR Corp.

No. C5909-20071001- 2/2 -