Sine-wave Driving, High Voltage 3-phase Motor Driverwith Built-in Hall Amplifiers

SIM2602M

Data Sheet

Description

Package

The SIM2602M is high voltage 3-phase motor driverdriven by a sinusoidal control, which can support Hall
element and Hall IC inputs, thus offering high-efficient
yet low-noise motor control. Supplied in a highly heatdissipating DIP package, where a controller, a gate
driver, the output transistors of three phases, andbootstrap diodes are highly integrated, the SIM2602M
requires only a few external components for building a
motor driver. This also allows a motor driver to behighly reliable in performance and design-friendly with
its compactness. These products can optimally control
the inverter systems of low- to medium-capacity motorsthat require universal input standards.

DIP40
Mold Dimensions: 36.0 mm × 14.8 mm × 4.0 mm
140

Leadform 2972

40

1
20
21
21
20

Not to scale

Features

Specifications● Pb-free (RoHS Compliant)● Isolation Voltage: 1500 V (for 1 min)
UL-recognized Component (File No.: E118037)● Low Noise, High Efficiency(Sinusoidal Current Waveform)● Reduced Number of Parts Achieved by Built-in
Bootstrap Diodes● Hall Element and Hall IC Inputs● Application-specific Optimal Settings with External
Signals:– Motor Speed– Phase Adavance Angle– Motor Direction– User-settable Motor Lock Detection(Enabled or Disabled)● 5 V Reference Voltage Output(Used for Driving Hall Elements etc.)● Fault Signal Output at Protection Activation (FO Pin)
● Protections Include:– VREG Pin Undervoltage Lockout (UVLO_REG)– Undervoltage Lockout for Power Supplies
VBx Pin (UVLO_VB)
VCC Pin (UVLO_VCC)– Overcurrent Limit (OCL)– Overcurrent Protection (OCP)– Thermal Shutdown (TSD)– Motor Lock Protection (MLP)– Reverse Rotation Detection– Hall Signal Abnormality Detection● Breakdown Voltage: 600 V● IO: 5.0 A● Output Transistor: IGBT + FRDApplications
For motor drives such as:● Fan Motor and Pump Motor for Washer and Dryer● Fan Motor for Air Conditioner● Fan Motor for Air Purifier and Electric Fan

Typical Application
VCC

VCC

U1

19

29
COM3
FO

FG
VSP

20

21

17

34

16

26

VREG
U-phaseHall element

HUN
HVP

V-phaseHall element

HVN
HWP

W-phaseHall element

SIM2602M-DSE Rev.1.9
SANKEN ELECTRIC CO., LTD.
Nov. 10, 2022
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2019

HWN

VREG

VDC

VB1
VB2
VB3

15

14
13
12
10

27

Control
Circuit

23

9

33

6

36

(NC) 1
FGSEL

VBB1

18

24

HUP

VBB2

40

V1
W1
U
V2

M

W2

8

CW/CCW

7
MLP
4
LA
3
OCP
5
COM2
11
COM1
2

31

38

LS1
LS2

1

SIM2602M
Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings----------------------------------------------------------------------------- 4
2. Recommended Operating Conditions ----------------------------------------------------------------- 5
3. Electrical Characteristics -------------------------------------------------------------------------------- 6
3.1 Characteristics of Control Parts------------------------------------------------------------------ 6
3.2 Bootstrap Diode Characteristics ----------------------------------------------------------------- 7
3.3 Transistor Characteristics ------------------------------------------------------------------------- 8
3.4 Thermal Resistance Characteristics ------------------------------------------------------------- 9
4. Mechanical Characteristics --------------------------------------------------------------------------- 10
5. Insulation Distance -------------------------------------------------------------------------------------- 10
6. Block Diagrams ------------------------------------------------------------------------------------------ 11
7. Pin Configuration Definitions ------------------------------------------------------------------------- 12
8. Typical Applications ------------------------------------------------------------------------------------ 13
9. Physical Dimensions ------------------------------------------------------------------------------------ 15
10. Marking Diagram --------------------------------------------------------------------------------------- 16
11. Functional Descriptions -------------------------------------------------------------------------------- 17
11.1 Pin Descriptions ----------------------------------------------------------------------------------- 17
11.1.1 COM1, COM2, and COM3---------------------------------------------------------------- 17
11.1.2 LA ---------------------------------------------------------------------------------------------- 17
11.1.3 MLP -------------------------------------------------------------------------------------------- 17
11.1.4 OCP -------------------------------------------------------------------------------------------- 17
11.1.5 VREG ------------------------------------------------------------------------------------------ 17
11.1.6 CW/CCW ------------------------------------------------------------------------------------- 18
11.1.7 FGSEL ----------------------------------------------------------------------------------------- 18
11.1.8 HUP, HVP, and HWN; HUN, HVN, and HWP --------------------------------------- 18
11.1.9 VSP --------------------------------------------------------------------------------------------- 18
11.1.10 FG ---------------------------------------------------------------------------------------------- 18
11.1.11 FO ---------------------------------------------------------------------------------------------- 19
11.1.12 VCC -------------------------------------------------------------------------------------------- 19
11.1.13 VBB1 and VBB2 ----------------------------------------------------------------------------- 19
11.1.14 VB1, VB2, and VB3 ------------------------------------------------------------------------- 19
11.1.15 U, V1, V2, W1, and W2 -------------------------------------------------------------------- 19
11.1.16 LS1 and LS2 ---------------------------------------------------------------------------------- 19
11.2 Startup Operation --------------------------------------------------------------------------------- 20
11.3 Charging of Bootstrap Capacitors ------------------------------------------------------------- 20
11.4 Motor Speed Control ----------------------------------------------------------------------------- 21
11.5 Phase Advance Function ------------------------------------------------------------------------- 21
11.6 Fault Signal Output ------------------------------------------------------------------------------- 26
11.7 Protection Functions ------------------------------------------------------------------------------ 26
11.7.1 VREG Pin Undervoltage Lockout (UVLO_VREG) ---------------------------------- 26
11.7.2 Undervoltage Lockout for Power Supply (UVLO) ----------------------------------- 26
11.7.3 Overcurrent Limit (OCL) and Overcurrent Protection (OCP) -------------------- 26
11.7.4 Thermal Shutdown (TSD) ----------------------------------------------------------------- 27
11.7.5 Motor Lock Protection (MLP) ------------------------------------------------------------ 27
11.7.6 Reverse Rotation Detection---------------------------------------------------------------- 27
11.7.7 Hall Signal Abnormality Detection ------------------------------------------------------ 27
12. Design Notes ---------------------------------------------------------------------------------------------- 29
12.1 PCB Pattern Layout ------------------------------------------------------------------------------ 29
12.2 Considerations in IC Characteristics Measurement --------------------------------------- 29

SIM2602M-DSE Rev.1.9
SANKEN ELECTRIC CO., LTD.
Nov. 10, 2022
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 20192

SIM2602M
12.3 Considerations in Heatsink Mounting -------------------------------------------------------- 30
13. Calculating Power Losses and Estimating Junction Temperature ---------------------------- 31
13.1.1 IGBT Steady-state Loss, PON -------------------------------------------------------------- 31
13.1.2 IGBT Switching Loss, PSW ----------------------------------------------------------------- 31
13.1.3 Estimating Junction Temperature of IGBT -------------------------------------------- 31
14. Performance Curves ------------------------------------------------------------------------------------ 32
14.1 Transient Thermal Resistance Curves -------------------------------------------------------- 32
14.2 Performance Curves of Control Parts--------------------------------------------------------- 33
14.3 Performance Curves of Output Parts --------------------------------------------------------- 37
14.3.1 Transistor Characteristics ----------------------------------------------------------------- 37
14.3.2 Switching Losses ----------------------------------------------------------------------------- 37
14.4 Allowable Effective Current Curves ----------------------------------------------------------- 38
14.5 Short Circuit SOA (Safe Operating Area) --------------------------------------------------- 38
15. Pattern Layout Example ------------------------------------------------------------------------------- 39
16. Typical Motor Driver Application ------------------------------------------------------------------- 41
Important Notes ---------------------------------------------------------------------------------------------- 42

SIM2602M-DSE Rev.1.9
SANKEN ELECTRIC CO., LTD.
Nov. 10, 2022
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 20193

SIM2602M
1.

Absolute Maximum Ratings

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25 °C, COM1 = COM2 = COM3 = COM.
Parameter
SymbolConditions
Rating
Unit
Main Supply Voltage (DC)VDC

VBBx–LSx

450

V

Main Supply Voltage (Surge)

VDC(SURGE)

VBBx–LSx

500

V

IGBT Breakdown Voltage

VCES

IC = 1 mA

600

V

VCC

VCC–COM

20

V

20

V

5.0

A

7.5

A

Logic Supply Voltage

VBS

VB1–U,
VB2–V1,VB3–W1
TC = 25 °C,

Output Current (DC)(1)

IO

Output Current (Pulse)

IOP

VREG Pin Output Voltage

VREG

5.5

V

VREG Pin Current
Input Voltage 1 (HUP, HUN, HVP, HVN,
HWP, HWN)
Input Voltage 2 (LA, MLP, OCP,CW/CCW, FGSEL)
Input Voltage 3 (VSP)

IREG

30

mA

VIN(1)−0.5 to VREGV

VIN(2)−0.5 to VREGV

VIN(3)−0.5 to 10

V

Output Voltage (FG, FO)VO−0.5～VREGV

LSx Pin Voltage (DC)VLS(DC)

LSx–COM−0.7 to 7

V

VLS(SURGE)

LSx–COM−4 to 7V

TC(OP)−30 to 100°CJunction Temperature(3)

TJ

150

°C

Storage Temperature

TSTG−40 to 150°C

LSx Pin Voltage (Surge)
Operating Case Temperature(2)

TJ < 150 °C
TC = 25 °C,
pulse width ≤ 100 μs(1)Should be derated depending on an actual case temperature. See Section 14.4.
Refers to a case temperature measured during IC operation.
(3)
Refers to the junction temperature of each chip built in the IC, including the control stage, gate drive stage, andoutput transistors.
(2)

SIM2602M-DSE Rev.1.9
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SIM2602M
2.

Recommended Operating Conditions
Unless specifically noted, COM1 = COM2 = COM3 = COM.
Parameter
SymbolConditions

Min.

Typ.

Max.

Unit

VDC

VBBx–LSx

—

300

400

V

VCC

VCC–COM

13.5

—

16.5

V

VBS

VB1–U,
VB2–V,
VB3–W1

13.5

—

16.5

V

VIN(1)

0

—

5.0

V

VIN(2)0—

5.0

VIN(3)

0

—

5.4

V

FO Pin Noise Filter Capacitor

CFO

0.001

—

0.01

μF

Bootstrap Capacitor

CB

1

—

—

μF

Shunt Resistor*

RS

88

—

—

mΩ

RC Filter Resistor

RO

—

—

100

Ω

RC Filter Capacitor

CO

100

—

2200

pF

Operating Case Temperature* Should be a low-inductance resistor.

TC(OP)

—

—

100

°C

Main Supply Voltage
Logic Supply Voltage
Input Voltage 1 (HUP, HUN, HVP,
HVN, HWP, HWN)
Input Voltage 2 (MLP, CW/CCW,
FGSEL)
Input Voltage 3 (VSP)IOP ≤ 7.5 A

SIM2602M-DSE Rev.1.9
SANKEN ELECTRIC CO., LTD.
Nov. 10, 2022
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SIM2602M
3.

Electrical Characteristics

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25 °C, VCC = 15 V, COM1 = COM2 = COM3 = COM.

3.1

Characteristics of Control Parts
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

10.5

11.5

12.5

V

10.0

11.0

12.0

V

9.5

10.5

11.5

V

9.0

10.0

11.0

V

VSP = 5.4 V, IREG = 0 A
VBx = 15 V, VSP = 5.4 V;
VBx pin current in
1-phase operation

—

5.5

—

mA

40

140

350

μA

IREG = 0 mA to 30 mA

4.5

5.0

5.5

V

2.25

2.50

2.75

V

Power Supply Operation
Low-side Logic Operation Start Voltage

VCC(ON)

Low-side Logic Operation Stop Voltage
High-side Logic Operation Start
Voltage
High-side Logic Operation Stop
Voltage

VCC(OFF)
VBS(ON)VBS(OFF)
ICC

Logic Supply Current
VREG Pin Output Voltage

IBS
VREG

VCC–COM

VB1–U, VB2–V1,
VB3–W1(1)

Input Signal
Input Threshold Voltage(MLP, FGSEL, CW/CCW)High Level Input Current 1 (LA, MLP,
CW/CCW, FGSEL, VSP)
Low Level Input Current 1 (LA, MLP,
CW/CCW, FGSEL, VSP)High Level Input Current 2 (OCP)

VTH
IIH1

VIN = VREG

—

25

100

μA

IIL1

VINL = 0 V

—

—

2

μA

IIH2

VIN = VREG

−5

—

5

μA

IIL2

VINL = 0 V

—

23

90

μA

IIH3

VIN = VREG

−5

—

5

μA

IIL3

VINL = 0 V

−5

—

5

μA

Low Level Input Current 2 (OCP)High Level Input Current 3 (HUP,
HUN, HVP, HVN, HWP, HWN)
Low Level Input Current 3 (HUP,
HUN, HVP, HVN, HWP, HWN)
High Level Output Voltage (FG, FO)

VOH

4.5

—

5.5

V

Low Level Output Voltage (FG, FO)

VOL

—

—

0.5

V

(1)

Guaranteed by design.

SIM2602M-DSE Rev.1.9
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Nov. 10, 2022
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SIM2602M
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

fC

16

17

18

kHz

fOSC

4.10

4.32

4.54

MHz

PWM Control
PWM Carrier Frequency(2)Internal Oscillator Frequency
Dead Time

(2)

(2)

—

1.2

—

μs

VSP = 1.5 V; withbootstrap capacitors being
charged

—

6.3

—

%

VSP = 2.0 V

—

0

3

%

VSP = 3.7 V
VSP = 5.0 V (driven bytrapezoidal control)
VSP = 5.4 V (driven bysinusoidal control)

47

50

53

%

85.0

—

88.9

%

93.7

—

100

%

tD

Control IC Output Pulse Duty Cycle(Low-side) (2)Control IC Output Pulse Duty Cycle(High-side) (2)D

D

Protection
OCL Threshold Voltage

VLIM

0.25

0.30

0.35

V

OCL Blanking TimetBK(OCL)

—

2.3

4.5

μs

OCP Threshold Voltage

VTRIP

0.54

0.60

0.66

V

OCP Blanking TimetBK(OCP)

—

0.8

1.7

μs

OCP Hold Time

tP

—

15

—

ms

MLP Detection Time

tLD

—

5

—

s

tLH

—

64

—

s

—

130

—

°C

—

30

—

°C

VUVRL

3.24

3.60

3.96

V

VUVRH

3.60

4.00

4.40

V

Min.

Typ.

Max.

Unit

MLP Hold TimeTSD Operating Temperature

(3)

TDH

(3)

TD(HYS)TSD Hysteresis Temperature
VREG Pin Undervoltage Lockout
Operating Voltage(2)VREG Pin Undervoltage Lockout
Releasing Voltage(2)

(2)
(3)

IREG = 0 mA;
without heatsink

Refers to an internal signal; guaranteed by design.
Refers to the junction temperature of the gate drive stage.

3.2

Bootstrap Diode Characteristics
Parameter

Bootstrap Diode Leakage Current
Bootstrap Diode Forward Voltage

SymbolConditions

ILBD

VR = 600 V

—

—

100

μA

VFB

IFB = 10 mA; voltage dropin RBOOT included

—

3.0

—

V

SIM2602M-DSE Rev.1.9
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Nov. 10, 2022
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SIM2602M
3.3

Transistor Characteristics

Figure 3-1 provides the definitions of switching characteristics described in this and the following sections. Internalsignals, HINx and LINx, are defined as VIN (see Section 6).

VIN
0

trr
tf

tr

IC

90%
10%

0

VCE

0

Figure 3-1.
Parameter
Collector-to-Emitter Leakage
Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage
High-side Switching
Source-to-Drain Diode Reverse
Recovery Time*
Rise Time*
Fall Time*
Low-side Switching
Source-to-Drain Diode Reverse
Recovery Time*
Rise Time*
Fall Time** Guaranteed by design.

SymbolSwitching Characteristics Definitions
Conditions

Min.

Typ.

Max.

Unit

ICES

VCE = 600 V, VIN = 0 V

—

—

1

mA

VCE(SAT)IC = 5.0 A, VIN = 5 V

—

1.75

2.2

V

VF

IF = 5.0 A, VIN = 0 V

—

2.0

2.4

V

trr

VDC = 300 V, IC = 5.0 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load

—

100

—

ns

—
—

110
210

—
—

ns
ns

VDC = 300 V, IC = 5.0 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load

—

100

—

ns

—

110

—

ns

—

210

—

ns

tr
tf

trr
tr
tf

SIM2602M-DSE Rev.1.9
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Nov. 10, 2022
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SIM2602M
3.4

Thermal Resistance Characteristics
Parameter

Junction-to-Case Thermal
Resistance(1)Junction-to-Ambient Thermal
Resistance

SymbolR(J-C)Q

Conditions(2)

All IGBTs operating
All freewheeling diodes
operatingAll IGBTs operating
All freewheeling diodes
operatingR(J-C)F(3)R(J-A)Q
R(J-A)F

Min.

Typ.

Max.

Unit

—

—

3.6

°C/W

—

—

4.2

°C/W

—

—

25

°C/W

—

—

29

°C/W

(1)

Refers to a case temperature at the measurement point described in Figure 3-2.
Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient
thermal characteristics, see Section 14.1.
(3)
Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case.
(2)

Measurement point
29

40

21

4.7 mm1

20

Figure 3-2.

Case Temperature Measurement Point

SIM2602M-DSE Rev.1.9
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SIM2602M
4.

Mechanical Characteristics

Parameter
Conditions
Min.
Typ.
Max.
Unit
Remarks
Heatsink Mounting
*
0.294
—
0.441
N∙m
Screw Torque
Flatness of Heatsink
See Figure 4-1.
0
—
100
μm
Attachment Area
Package Weight
—
5.2
—
g
* Requires using a metric screw of M2.5 and a plain washer of 6.0 mm (φ). For more on screw tightening, see Section
12.3.

Heatsink

Measurement position

-+

-

+

Heatsink

Figure 4-1.

5.

Flatness Measurement Position

Insulation DistanceParameter

Clearance

Conditions
Between heatsink* andleads. See Figure 5-1.

Min.

Typ.

Max.

Unit

1.5

—

2.1

mm

Remarks

Creepage
1.7——mm* Refers to when a heatsink to be mounted is flat. If your application requires a clearance exceeding the maximum
distance given above, use an alternative (e.g., a convex heatsink) that will meet the target requirement.

Creepage
Clearance

Heatsink

Figure 5-1.

Insulation Distance Definitions

SIM2602M-DSE Rev.1.9
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SIM2602M
6.

Block Diagrams
VCC 1934 VB1
26 VB2
24 VB3(NC) 1UVLO VCC

VREG
VREG(5 V / 30 mA)

UVLO VREG

OSC

Triangle wave

HUP 15
HUN 14
HVP 13
HVN 12HU

HWP 10
HWN 9

HW

FG 17
FO 18
VSP 16LA 3
MLP 4
CW/CCW 7
FGSEL 8OCP 5
COM1 2
COM2 11
COM3 20HVUVLO(VCC / 5 V)

HO1
HO2
HO3

HIN2
HIN3

Square wave
matrixDrive system
control circuit

LIN1
LIN2

Rotation freq.
and direction
detection

LIN3

High-side
driver

33 U
27 V1
23 W1
36 V2
40 W2
LO1

Low-side driver
Analogdigitalconverter

29 VBB2

UVLO
(VB)

HIN1

Sine wave
matrixPosition
estimation

21 VBB1

Reset

Input logic

VREG 6

Control circuit

LO2
LO3

Error

OCL/OCP

Control
circuitController

Figure 6-1.

Thermalshutdown

38 LS2Gate Driver

31 LS1

Block Diagram

SIM2602M-DSE Rev.1.9
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SIM2602M
7.

Pin Configuration Definitions

40

Pin
Number
1

Pin
Name
NC

(No connection)

39

2

COM1

Logic ground

38

3

LA

37

4

MLP

36

5

OCP

Input for phase advance angle setting signal
Setting pin to enable or disable the motor lockprotection
Input for overcurrent detection signal

35

6

VREG

Internal regulator output

VB1

34

7

CW/CCW

Input for motor direction setting signal

U

33

8

FGSEL

Input for FG pin setting signal

32

9

HWN

W-phase Hall element negative signal input (−)

31

10

HWP

W-phase Hall element positive signal input (+)

30

11

COM2

Logic ground

12

HVN

V-phase Hall element negative signal input (−)

13

HVP

V-phase Hall element positive signal input (+)

14

HUN

U-phase Hall element negative signal input (−)

15

HUP

U-phase Hall element positive signal input (+)

16

VSP

Input for motor speed control signal

17

FG

Rotation pulse signal output

18

FO

Fault signal output

Top View
1

(NC)

2

COM1

3

LA

4

MLP

5

OCP

6

VREG

7

CW/CCW

8

FGSEL

9

HWN

10

HWP

11

COM2

W2

LS2

V2

LS1

VBB2

29

Description

12

HVN

13

HVP

14

HUN

V1

27

15

HUP

VB2

26

16

VSP

17

FG

VB3

24

18

FO

W1

23

19

VCC

Input for logic supply voltage

19

VCC

22

20

COM3

Logic ground

20

COM3

21

21

VBB1

Positive DC bus supply voltage (+)

22—

Pin removed

23

W1

W-phase output (connected to W2 externally)

24

VB3

W-phase high-side floating supply voltage input

25—

Pin removed

26

VB2

V-phase high-side floating supply voltage input

27

V1

V-phase output (connected to V2 externally)28—

Pin removed

29

VBB2

30

—

31

LS1

32

—

Pin removed
U-phase low-side IGBT emitter (connected to L2
externally)
Pin removed

33

U

U-phase output

34

VB1

U-phase high-side floating supply voltage input

35—

Pin removed

36

V2

V-phase output (connected to V1 externally)

37

—

38

LS2

39

—

Pin removed
V-/W- phases low-side IGBT emitter (connectedto L1 externally)
Pin removed

40

W2

W-phase output (connected to W1 externally)

28

25

VBB1

Positive DC bus supply voltage (+)

SIM2602M-DSE Rev.1.9
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SIM2602M
8.

Typical Applications

Figure 8-1 is a typical application which uses signals input from the Hall elements; Figure 8-2 is a typical application
which uses signals input from Hall ICs.
CR filters and Zener diodes should be added to your application as needed. This is to protect each pin against surge
voltages causing malfunctions, and to avoid the IC being used under the conditions exceeding the absolute maximum
ratings where critical damage is inevitable. Then, check all the pins thoroughly under actual operating conditions toensure that your application works flawlessly.
COM3
VCC

VCC

20

U1

19

CP

FO
RSP

VSP
CSP

RHI

VREG

FG
HUP

U-phaseHall element

CH1

HUN

CPH

HVP
V-phaseHall element

CH2

HVN

COM2
HWP
W-phaseHall element

CH3

HWN

RHO

21

18

17
15

14

CB2

13

27

12

29

9

36

8

CLA

CO COM1

LS1
U
VB1

V2

CB1

M

7

6
OCP
5
MLP
4
LA
3

RFS2 RCW2 RMLP2

VBB2

Controller

VREG

CPR

CB3

10

34

RMLP1 RLA1

V1

11

33

CW/CCW

CDC

W1
23
VB3
24
VB2
26

31

FGSEL

VDC
CS

16

Gate Driver

RFS1 RCW1

VBB1

38
40

LS2
W2

2

RLA2 DLA(NC) 1RO

Figure 8-1.

DS

RS

Application Using Signals Input from Hall Elements

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SIM2602M
COM3
VCC

VCC

20

U1

19

CP

FO
RSP

VSP

CSP

FG
HUP

Hall signal

21

18

VBB1

VDC
CDC

CS

16

W1
23
VB3
24
VB2
26

17
15

CH1
HUN
HVP

Hall signal

CB2

14
27

13

CH2

29
HVN
COM2
HWP

Hall signal

10

Controller
Gate Driver

33

9

CPH
34
FGSEL
CW/CCW
RMLP1 RLA1

36

8

6
OCP
5
MLP
4
LA
3

RHO RFS2 RCW2 RMLP2

CLA

CO COM1

LS1
U
VB1

V2

CB1

M

7

VREG

CPR

VBB2

11

31
RHI RFS1 RCW1

CB3

12

CH3
HWN

V1

38
40

LS2
W2

2

RLA2 DLA(NC) 1RO

Figure 8-2.

DS

RS

Application Using Signals Input from Hall ICs

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SIM2602M
9.

Physical Dimensions

1.8 ±0.3

1
20(0.04) Center of screw hole

Gate burr

33.7

1.8 ±0.1(Root of pin)17.4 ± 0.5(Ends of pins)

8.35 ±0.3

Pin 1 indicator

φ3.2±0.2

Top View(Includes mold flash)14.0 ±0.2Intersection point

14.8 ±0.3

2140

7.4 ±0.15

2-R1.5+0 . 10.42 -0.05+0.4
7.6 -0.3

8.35 ±0.3● DIP40 Package

36 ±0.3(Includes mold flash)

S

0.52

+0.1
-0.05

19 × P1.778 ± 0.25 = 33.782 ± 0.3(Ends of pins)(Target value of pin root)

0.1

16.7

S

1.7 (min.)A

NOTES:● Dimensions in millimeters● Pb-free (RoHS compliant)● “A” represents a pin illustrated for reference only, not the actual state of a bend.
● Maximum gate burr height is 0.3 mm.

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SIM2602M● Land Pattern Example● Reference Through Hole Size and Layout
40

21

17.4 (typ.)φ1.1 (typ.)
33.7

8.7

0.04
Center of screw hole1

20

Pin pich: 1.778
33.782

Unit: mm

10. Marking Diagram● Front-side Marking
40

21

SIM2602M

Part Number

YMDDXX
1

20

Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
XX is the control number● Back-side Marking
1

20

SIM2602M

Part Number

YMDDXX
40

21

Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
XX is the control number

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SIM2602M
11. Functional Descriptions
Unless specifically noted, this section uses thefollowing definitions:● For concise descriptions, this section employs
notation systems that denote the electricalcharacteristics symbols listed in Section 3 and theelectronic symbol names of the typical applications in
Section 8. All the characteristic values given in thissection are typical values, unless they are specified asminimum or maximum.
● For pin and peripheral component descriptions, thissection employs a notation system that denotes a pin
name or an electronic symbol name with the arbitrary
letter “x”, representing the certain numbers and letters(1 to 3 and U to W). Thus, “the VBx pin” is used
when referring to any or all of the VB1, VB2, andVB3 pins.

protection based on the setting of this pin. Table 11-1
provides the logic level definitions for the MLP pin. The
IC detects which logic level the MLP pin has been set
during a startup period (i.e., when the VCC pin voltage
is rising). Figure 11-2 shows an internal circuit diagramof the MLP pin. To set the MLP pin to logic low,
connect the pin to the GND pin. To set the MLP pin tologic high, connect the pin to the VREG pin. Section
11.7.5 explains more details on the motor lockprotection.
Table 11-1. Logic Levels Defined for MLP Pin
MLP PinL
H

MLP Setting Status
EnabledDisabled

U1

VREG
200 Ω

MLP 4

11.1 Pin Descriptions

200 kΩ

7V

COMx

11.1.1

COM1, COM2, and COM3

These are the logic ground pins for the built-in control
ICs and are internally connected. Varying electric
potential of the logic ground can be a cause of improper
operations. Therefore, connect the logic ground as closeand short as possible to a shunt resistor, RS, at a singlepoint ground (or star ground) which is separated fromthe power ground (see Figure 11-1).
VBB1 21
VBB2 29

U1

VDC
CS

2 COM111 COM2
20 COM3

CDC

LS1 31LS2 3811.1.4

OCP

This pin serves as the input of the overcurrent
protection (OCP) which monitors the currents flowing
through the output transistors. The IC determines whichof the overcurrent limit (OCL) and overcurrent
protection (OCP) functions to activate according to thelevel of a voltage applied to the OCP pin. Section 11.7.3
provides further information about the OCP circuit
configuration and its mechanism.

Connections to Logic Ground11.1.5

5V

VREG
VREG

11.1.37V

LA

The IC features the phase advance function. The angleof phase advance is determined by an analog voltage
applied to the LA pin. Section 11.5 gives detailed
explanations on the LA pin settings and the phaseadvance function.

MLP

The IC determines to enable or disable the motor lock

6
64 kΩ

CPR

11.1.2

Internal Circuit Diagram of MLP Pin

RS
Create a single-point ground(a star ground) near RS, but keep it
separated from the power ground.

Figure 11-1.

Figure 11-2.

20 kΩ

COMx

Figure 11-3.

VCC
U1
Internal reference
voltage

Internal
logic signal

Internal circuits

Internal Circuit Diagram of VREG Pin

This is the 5.0 V regulator output pin, which can beused for the power supply of the external Hall elements.
A maximum output current of the VREG pin is 30 mA.
To stabilize the VREG pin output, connect a capacitor,
CPR, of about 0.1 μF to the pin. The VREG pin also has

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SIM2602M
the undervoltage lockout. For more details on thisfunction, see Section 11.7.1.

U1

VREG
4 kΩ

FGSEL 811.1.6200 kΩ

CW/CCW

This is the setting pin which determines the directionof motor rotation. Table 11-2 lists the logic level
definitions for the CW/CCW pin and the corresponding
motor directions. And Figure 11-4 shows an internal
circuit diagram of the CW/CCW pin. To set the
CW/CCW pin to logic low, connect the pin to the GND
pin. To set the CW/CCW pin to logic high, connect thepin to the VREG pin. The IC detects which logic level
the CW/CCW pin has been set during a startup period(i.e., a period during which the VCC pin voltage isrising).
Table 11-2. Logic Levels Defined for CW/CCW Pin
CW/CCW Pin
L
H

Motor Direction
Forward (CW)
Reverse (CCW)

U1

COMx

Figure 11-5.

11.1.8Internal Circuit Diagram of FGSEL Pin

HUP, HVP, and HWN;
HUN, HVN, and HWP

These are the input pins for Hall element signals. The
HxP pin is connected to the positive node of a Hall
element, whereas the HxN pin is connected to thenegative node of a Hall element. As Figure 11-6
illustrates, connect a noise filter capacitor, CHx, with acapacitance of about 0.1 μF, between the HxP and HxN
pins. CHx must be placed near the IC with a minimal
length of traces. The IC incorporates the protection
circuit that detects abnormal signals from the external
Hall elements (see Section 11.7.7).

VREG
200 Ω

CW/CCW 7
200 kΩ

VREG
RHI

VREG

HxP

7V

COMx

Figure 11-4.

7V

Hall
element

Internal Circuit Diagram of CW/CCW
Pin

CHx

4 kΩ
4 kΩ
Internal
logic signal

HxN
RHO

7V 7V

COMx

11.1.7FGSELThe FGSEL pin determines the cycle of a rotation
pulse signal the FG pin outputs. Table 11-3 provides therelation between the FGSEL pin logic level and thenumber of pulses of a rotation pulse signal per 360°
electrical angle. Figure 11-5 shows an internal circuit
diagram of the FGSEL pin. To set the FGSEL pin tologic low, connect the pin to the GND pin. To set the
FGSEL pin to logic high, connect the pin to the VREG
pin. The IC detects which logic level the FGSEL pin has
been set during a startup period (i.e., when the VCC pin
voltage is rising).
Table 11-3. Number of Pulses of Rotation Pulse Signal
FGSEL Pin
L
H

Number of Signal Pulses
3 pulses per 360° electrical angle
1 pulse per 360° electrical angle

Figure 11-6.

11.1.9Internal Circuit Diagram of HxP and HxN
Pins

VSP

The IC controls the speed of motor rotation with ananalog voltage applied to the VSP pin. For more details
on the motor speed control, see Section 11.4.

11.1.10 FG
The FG pin outputs a rotation pulse signal that is
generated based on a position sensing signal. A rotation
pulse signal is inverted at each edge of the Hall element
signal assigned to the U-, V-, and W-phases. As shownin Figure 11-7, the FG pin is internally pulled down to
the COMx pin.

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SIM2602M
VREG

U1

200 Ω

FG 17
7V

Internal
logicsignal200 kΩ

COMx

Figure 11-7.

Internal Circuit Diagram of FG Pin

11.1.13 VBB1 and VBB2
These are the input pins for the main supply voltage,i.e., the positive DC bus. All of the high-side collectors
are connected to these pins. Voltages between the VBBx
and COMx pins should be set within the recommended
range of the main supply voltage, VDC, given in Section
2.
To suppress surge voltages, put a 0.01 μF to 0.1 μF
bypass capacitor, CS, near the VBBx pin and anelectrolytic capacitor, CDC, with a minimal length of
PCB traces to the VBBx pin.

11.1.11 FO
The FO pin operates as the fault signal output. For
more details on this function, see Section 11.6. Figure11-8 shows an internal circuit diagram of the FO pin.
The FO pin can also be directly connected to the input
pin of the external microcontroller. For avoiding
repeated OCP activations, the external microcontroller
must shut off any input signals to the IC within an OCP
hold time, tP = 15 ms, after a fault signal output. (Formore details, see Section 11.7.3)
VREG

U1

200 Ω

FO 18
7V

200 kΩ

Internal
logicsignal

11.1.14 VB1, VB2, and VB3
The VB1, VB2, and VB3 pins are connected tobootstrap capacitors, CBx, for the high-side floating
supply. For proper startup, turn on the low-side
transistors first, then fully charge the bootstrap
capacitors, CBx. Section 11.2 describes the startup
sequences of the IC in detail; Section 11.3 explains theprocedures to charge the bootstrap capacitors.
CBx ,with a capacitance of about 1 μF, must be placednear the IC, and connected between the VBx and output(U, V1, W1) pins with a minimal length of trances. The
VBx pin also has the undervoltage lockout for power
supply. For more details on this function, see Section
11.7.2.1.

11.1.15 U, V1, V2, W1, and W2

COMx

Figure 11-8.

Internal Circuit Diagram of FO Pin

11.1.12 VCC
This is the logic supply pin for the built-in control ICs.
The VCC pin has the undervoltage lockout for power
supply (see Section 11.7.2.2). To prevent malfunction
induced by supply ripples or other factors, put a 0.01 μF
to 0.1 μF ceramic capacitor, CP, near these pins. To
prevent damage caused by surge voltages, put an 18 V to
20 V Zener diode, DZ, between the VCC and COMx
pins. Voltages to be applied between the VCC andCOMx pins should be regulated within therecommended operational range of VCC, given in
Section 2.
U1

19
VCC

VCC
DZ

MIC

CP
COMx

Figure 11-9.

VCC Pin and Its Peripheral Circuit

These pins are the outputs of the three phases, andserve as the connection terminals to the 3-phase motor.
The V1 and W1 pins must be connected to the V2 andW2 pins on a PCB, respectively. The U, V, and W1 pins
are the grounds for the VB1, VB2, and VB3 pins. The U,
V1, and W1 pins are connected to the negative nodes ofbootstrap capacitors, CBx. Since high voltages areapplied to these output pins (U, V1, V2, W1, W2), it isrequired to take measures for insulating as follows:● Keep enough distance between the output pins andlow-voltage traces.
● Coat the output pins with insulating resin.

11.1.16 LS1 and LS2
The LS1 pin is connected to the low-side emitter of
the U-phase; the LS2 pin is connected to the low-side
emitters of the V- and W-phases. The LSx pin should beconnected to an external shunt resistor, RS, on a PCB.
When connecting the shunt resistor, use the resistor with
low inductance (required), and place it as near as
possible to the IC with a minimum length of traces to theLSx and COMx pins. Otherwise, malfunction may occur
because a longer circuit trace increases its inductanceand thus increases its susceptibility to improper

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SIM2602M
operations. In applications where long PCB traces are
required, add a fast recovery diode, DRS, between theLSx and COMx pins in order to prevent the IC from
malfunctioning.
VBB1 21
VBB2 29

U1

VDC
CS

2 COM1LS111 COM2

LS2

31
38

RS

Add a fast recovery
diode to a long trace.

Figure 11-10.

CDC

DRS

Put a shunt resistor near
the IC with a minimum
length to the LSx pin.

Connections to LSx Pin

11.2 Startup Operation
When the VCC pin voltage reaches VCC(ON) = 11.5 V,
the IC starts operating. As the startup sequence starts,
the IC detects and reflects the logic states of thefollowing pins to the motor control settings: the MLP,
CW/CCW, and FGSEL pins. The IC then waits for the
VSP pin voltage to reach a certain level at which output
duty cycles are controllable. At startup, the IC operates
according to the VSP pin voltage levels as follows:● VSP < 1.0 V:
All the output signals are off.
● 1.0 V ≤ VSP < 2.1 V:
The IC starts charging bootstrap capacitors. For moredetails, see Section 11.3.
● 2.1 V ≤ VSP ≤ 5.4 V:
The IC controls its output duty cycles according to the
VSP pin voltage levels. While the frequency of aposition sensing signal, Hx, is less than 1.0 Hz at startup,
the motor is driven by a trapezoidal control. When Hx
increases to 1.0 Hz or more (i.e., the condition in which
a position sensing signal is detected at every rotation of
60° in electrical degrees), the IC generates a sine-wave
signal and drives the motor by a sinusoidal control.
Table 11-4 and Table 11-5 are truth tables for the
motor driven by the trapezoidal control in a forward orreverse rotation. Moreover, the timing charts shown later
represent the operational waveforms in the following
motor operations: the motor in a forward rotation (nophase advance; Figure 11-15), the motor in a forward
rotation (phase advance by 15°; Figure 11-16), and the
motor in a reverse rotation (Figure 11-17). The
following symbols used in Figure 11-15 to Figure 11-17
represent the signals generated inside the IC: SU, SV, SW,
SX, SY, SZ. Then the IC detects a state in which the
motor rotates inversely to the preset direction, the motor

driving system is immediately switched to thetrapezoidal control before a rotation of 60° electricalangle completes. For detailed descriptions on the reverse
rotation detection, see Section 11.7.6.
The following are the important considerations forappropriate power startup and shutdown sequences.
● To turn on the IC, be sure to increase the VSP pin
voltage last. To turn off the IC, be sure to decrease the
VSP pin voltage first.
● When you have enabled the motor lock protection(MLP = L), be sure to apply a voltage to the VBBx
pin at the timing described below. At startup, apply avoltage to the VCC pin and the VREG pin voltage,
VREG, increases. Then, apply a main supply voltage tothe VBBx pin within the period from VREG increase toan MLP detection time, tLD. When a position sensing
signal stays unchanged even after a lapse of tLD, theIC determines this condition as a motor lockup state
and activates the motor lock protection (see Section
11.7.5).
The IC can also operate in test mode. In test mode, thehigh-side transistors in the trapezoidal control are driven
at duty cycle = 100%, the TSD circuit is disabled, andthe phase advance angle is fixed at 0°. To start IC
operations in test mode, turn on the IC after applying a
voltage of ≥8.1 V on the VSP pin, and a voltage of
2.75 V (typ.) on the CW/CCW pin.

11.3 Charging of Bootstrap Capacitors
It is required to fully charge bootstrap capacitors, CBx,
at startup. The charging sequence depends on the VSP
pin voltage, VSP. When 1.0 V ≤ VSP ≤ 2.1 V at startup,
the IC turns on the low-side transistors at every PWM
cycle in order to charge CBx. When VSP ≥ 2.1 V, the IC
controls the motor speed according to the VSP pin
voltage levels (see Section 11.4). However, note that the
IC does not charge CBx even when 1.0 V ≤ VSP ≤ 2.1 V
along with the motor rotating inversely to the preset
direction, or the motor coasting at a frequency of ≥1.0
Hz. If a sudden rise in the VSP pin voltage up to 2.1 Vor more occurs at startup, the IC starts the motor speed
control after charging CBx for a period of 9 ms ± 5%.

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SIM2602M
11.4 Motor Speed Control

11.5 Phase Advance Function

The IC controls the speed of motor rotation with ananalog voltage applied to the VSP pin. When 2.1 V ≤VSP ≤ 5.4 V, the IC controls its output duty cycles
depending on the VSP pin voltage levels. For the IC
operation when VSP < 2.1 V (i.e., the startup sequence),
see Section 11.2.
A duty cycle of an output signal is determinedaccording to a digital signal that is generated by thebuilt-in 7-bit AD converter from the VSP pin input
voltage. The higher the VSP pin voltage increases, thehigher the duty cycle becomes, thus causing the motor torotate faster. Figure 11-11 depicts how a duty cycle
varies according to the VSP pin voltage, VSP. While VSP
maintains at 5.4 V or more, the IC controls its output
signals at duty cycle = 100%.

The IC features the phase advance function. The angleof phase advance is determined by an analog voltage
applied to the LA pin. As shown in Figure 11-13, theVREG pin voltage divided by two resistors, RLA1 andRLA2, is applied to the LA pin. Figure 11-14 plots how aphase advance angle changes over the LA pin voltage.
When the phase advance function is enabled, each phaseshifts ±0.9375° every 4 cycles of a Hall signal to thepreset angle.

Output CBx
off charged

VREG

6

RLA1

200 Ω

LA

RLA2

3
200 kΩ

Output duty cycle
controlled
COMx

80

Figure 11-13.

Duty Cycle (%)

100

40
20
0
0

1

2

3

4

5

6

VSP (V)

Figure 11-11.

VSP Pin Voltage vs. Duty Cycle

Figure 11-12 is an internal circuit diagram describing
the VSP pin and its peripheral circuit. A voltage to be
applied on the VSP pin, VSPP, must be set to <10 V, i.e.,
below the rated VSP pin input voltage. RSP should havea resistance of about 100 Ω; CSP should have acapacitance of about 0.1 μF.
VSPP
RSP

Phase Advance Angle (deg.)

60

7VInternal Circuit Diagram of LA Pin

60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VLA (V)

Figure 11-14.

LA Pin Voltage vs. Phase Advance
Angle

U1
14.4 kΩ

VREG

400 kΩ

16

AD
converter

VSP
154 kΩ
VREG

12 V

CSP
30 kΩ

1.85 V

Test mode

COMx

Figure 11-12.

Internal Circuit Diagram of VSP Pin and
Its Peripheral Circuit

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SIM2602M
Table 11-4. Truth Table for Trapezoidal Control (Forward)
Position Sensing Signal
HU

HV

HW

H
H
H
L
L
L
L
H

L
L
H
H
H
L
L
H

H
L
L
L
H
H
L
H

U-phaseHigh-side
Low-sideTransistor
Transistor
OFF
ON
OFF
ON
OFF
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
OFF

V-phaseHigh-side
Low-sideTransistor
Transistor
ON
OFF
OFF
OFF
OFF
ON
OFF
ON
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF

W-phaseHigh-side
Low-sideTransistor
Transistor
OFF
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF

Table 11-5. Truth Table for Trapezoidal Control (Reverse)
Position Sensing Signal
HU

HV

HW

L
L
L
H
H
H
H
L

H
H
L
L
L
H
H
L

L
H
H
H
L
L
H
L

U-phaseHigh-side
Low-sideTransistor
Transistor
OFF
ON
OFF
ON
OFF
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
OFF

V-phaseHigh-side
Low-sideTransistor
Transistor
ON
OFF
OFF
OFF
OFF
ON
OFF
ON
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF

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W-phaseHigh-side
Low-sideTransistor
Transistor
OFF
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF

22

SIM2602M
Hall Element Inputs

HUP
HUN

HVP
HVN

HWP
HWN
FG Pin Output
FG
Trapezoidal PWM Waveforms (Inside the IC, Position Sensing Signal at Freq. of 1.0 Hz)
SU
SV

PWM
PWM

PWM
PWM

SW

PWM

PWM
PWM

SX
SY
SZ
Sinusoidal PWM Waveforms (Inside the IC, Position Sensing Signal at Freq. of 1.0 Hz)

SU

SV

SW
Sinusoidal Output Waveforms (Line Voltage, Position Sensing Signal at Freq. of 1.0 Hz)

U-Vx

PWM

PWM

PWM

PWM

PWM

PWM

PWM

Vx-Wx

PWM

PWM

PWM

PWM

Wx-U

PWM
PWM

Figure 11-15.

PWM

Operational Waveforms (Forward, No Phase Advance)

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SIM2602M
Hall Element Inputs
HUP
HUN

HVP
HVN

HWP
HWN
FG Pin Output

FG
Trapezoidal PWM Waveforms (Inside the IC, Position Sensing Signal at Freq. of 1.0 Hz)
SU
SV

PWM

PWM

PWM

PWM

SW

PWM

PWM

PWM

SX
SY
SZ

Sinusoidal PWM Waveforms (Inside the IC, Position Sensing Signal at Freq. of 1.0 Hz)
SU

SV

SW
Sinusoidal Output Waveforms (Line Voltage, Position Sensing Signal at Freq. of 1.0 Hz)
U-Vx

PWM

PWM

PWM

PWM

PWM

PWM

PWM

Vx-Wx

PWM

PWM

PWM

PWM

Wx-U

PWM
PWM

Figure 11-16.

PWM

Operational Waveforms (Forward, Phase Advance by 15°)

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SIM2602M
Hall Element Inputs

HUP
HUN

HVP
HVN

HWP
HWN
FG Pin Output
FG

Trapezoidal PWM Waveforms (Inside the IC)
SU

PWM

PWM

SW

PWM

PWM

SV

PWM

PWM

SX
SY
SZ

Figure 11-17.

Operational Waveforms (Reverse)

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SIM2602M
11.6 Fault Signal Output

11.7.2.1. VBx Pin (UVLO_VB)

In case one or more of the following protections are
actuated, an internal P-channel power MOSFET turns on,then the FO pin becomes logic high (about 5 V). In
normal operation, the FO pin outputs a low signal.
For more details on the protections, see Section 11.7.

When the voltage between the VBx and output (U,V1/V2, or W1/W2) pins (VBx–HSx) decreases to
VBS(OFF) = 10.0 V or less, the UVLO_VB circuit gets
activated and turns off the high-side transistors. Whenthe voltage between the VBx and output pins increases
to VBS(ON) = 10.5 V or more, the IC releases the
UVLO_VB operation. Then, the high-side transistors
resume operating according to position sensing signals.

When the VCC pin voltage decreases to
VCC(OFF) = 11.0 V or less, the UVLO_VCC circuit gets
activated and turns off the high- and low-side transistors.
When the VCC pin voltage increases to VCC(ON) = 11.5 V
or more, the IC releases the UVLO_VCC operation.
Then, the high- and low-side transistors resume
operating according to position sensing signals.

11.7.311.7 Protection Functions

VREG Pin Undervoltage Lockout(UVLO_VREG)

When the VREG pin voltage decreases toVUVRL = 3.60 V or less, the VREG pin undervoltage
lockout (UVLO_VREG) circuit gets activated and turns
off the high- and low-side transistors. When the VREG
pin voltage increases to VUVRH = 4.00 V or more, the IC
releases the UVLO_VREG operation. Then, the highand low-side transistors resume operating according toposition sensing signals. During the UVLO_VREG
operation, the FO pin becomes logic high and transmits
fault signals.

11.7.2

U1
4 kΩ

5 kΩ

0.6 V

Undervoltage Lockout for Power
Supply (UVLO)

In case the gate-driving voltages of the output
transistors decrease, their steady-state power dissipations
increase. This overheating condition may cause
permanent damage to the IC in the worst case. To
prevent this event, the SIM2602M has the undervoltage
lockout (UVLO) circuits for each of the high-side (theVBx pin) and the low-side (the VCC pin) power
supplies.

VREG

212 kΩ

OCP
5

0.3 V

VBBx

OCP
output

VREG

5 kΩ

CO

-

11.7.1The IC has two different protections against
overcurrent conditions: the overcurrent limit (OCL) andthe overcurrent protection (OCP). Figure 11-18 is aninternal circuit diagram describing the OCP pin and its
peripheral circuit. The OCP pin detects overcurrents
with voltage across an external shunt resistor, RS.
Because the OCP pin is internally pulled up, the OCP
pin voltage increases proportionally to a rise in thecurrent running through the shunt resistor, RS. When the
shunt resistor, RS, is open, the IC activates the OCP
function.
Note that overcurrents are undetectable when one ormore of the U, V1/V2, and W1/W2 pins or their traces
are shorted to ground (ground fault). In case any of thesepins falls into a state of ground fault, the output
transistors may be destroyed.

+This section describes the various protection circuits
provided in the SIM2602M, such as those designed todetect a voltage drop across power supplies, anovercurrent condition, an abnormal motor state, and soon.

Overcurrent Limit (OCL) andOvercurrent Protection (OCP)-The fault signal output time of the FO pin at OCP
activation is defined as the OCP Hold Time, tP = 15 ms(typ.), fixed by a built-in feature of the IC itself (seeSection 11.7.3).
The external microcontroller receives a fault signal
with its interrupt pin (INT), and must be programmed to
shut off any input signals to the IC within thepredetermined OCP hold time, tP.

11.7.2.2. VCC Pin (UVLO_VCC)+● VREG pin undervoltage lockout (UVLO_VREG)● Overcurrent protection (OCP)● Thermal shutdown (TSD)● Motor lock protection (MLP)● Reverse rotation detection● Hall signal abnormality detection

OCL
output

COMx
LSx
A/D

RO

DRS

RS

COM

Figure 11-18.

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Internal Circuit Diagram of OCP Pin
and Its Peripheral Circuit

26

SIM2602M
The overcurrent limit (OCL) is a protection against
relatively low overcurrent conditions. When the OCP
pin voltage increases to VLIM = 0.30 V or more, andremains in this condition for a period of a blanking time(tBK(OCL) = 2.3 μs) or longer, the IC turns off the highand low-side transistors. The OCL operation is
automatically released at each PWM cycle.
The overcurrent protection (OCP) is a protection
against large inrush currents. When the OCP pin voltage
increases to VTRIP = 0.60 V or more, and remains in thiscondition for a period of a blanking time(tBK(OCP) = 0.8 μs) or longer, the OCP circuit is activated.
Then, the high- and low-side transistors are turned off
for a certain period of time (tP = 15 ms). After that, thehigh- and low-side transistors resume operating
according to position sensing signals. During the OCP
operation, the FO pin goes logic high and sends fault
signals.
The OCL and OCP are used for detecting abnormal
conditions, such as an output transistor shorted. In caseshort-circuit conditions occur repeatedly, the output
transistors can be destroyed. For this reason, motor
operations must be controlled by the external
microcontroller so that it can immediately stop the motor
when fault signals are detected. If you need to resume
the IC operation thereafter, set the IC to be resumed
after a lapse of ≥2 seconds.
For proper shunt resistor setting, your applicationmust meet the following:● Use the shunt resistor that has a recommended
resistance, RS (see Section 2).
● Set the OCP pin input voltage to vary within the rated
input voltages, VIN(2) (see Section 1).
● Keep the current through the output transistors below
the rated output current (pulse), IOP (see Section 1).
It is required to use a resistor with low internal
inductance because high-frequency switching current
will flow through the shunt resistor, RS. In addition,choose a resistor with allowable power dissipationaccording to your application.

11.7.4

Thermal Shutdown (TSD)The SIM2602M incorporates the thermal shutdown(TSD) circuit. In case of overheating (e.g., increased
power dissipation due to overload, or elevated ambient
temperature at the device), the IC shuts down the highand low-side transistors.
The TSD circuit in the MIC for gate driver monitors
temperatures (see Figure 6-1). When the junction
temperature of the MIC for gate driver, T J(DRV), exceeds
TDH = 130 °C, the TSD circuit is activated. When TJ(DRV)
decreases to TDH – TD(HYS) after the TSD activation, theshutdown condition is released. The output transistors
then resume operating according to input signals. During
the TSD operation, the FO pin becomes logic high andtransmits fault signals. Note that junction temperaturesof the output transistors themselves are not monitored;
therefore, do not use the TSD function as an
overtemperature prevention for the output transistors.

11.7.5Motor Lock Protection (MLP)

When the state in which a position sensing signal
stays unchanged within a rotation of 60° electrical angle
persists for a motor lock hold time (tLD = 5 s) or longer,
the motor lock protection (MLP) circuit gets activated.
Then, the high- and low-side transistors are turned off
for a certain period of time (tLH = 64 s). After that, thehigh- and low-side transistors resume operating
according to position sensing signals.
During the MLP operation, the FO pin becomes logic
high and transmits fault signals. Moreover, direct
currents through the output transistors cause an increasein the junction temperatures of the output transistors.
Therefore, care must be taken not to allow the junction
temperatures to exceed the absolute maximum rating.

11.7.6

Reverse Rotation Detection

In case the motor rotates in a direction opposite to thepreset direction, the reverse rotation detection function
gets activated and puts the FO pin into a high state (i.e.,
a fault signal output). When the motor rotates in thepreset direction, the FO pin is in a low state. When the
IC detects a reverse rotation state during motor rotations,the motor driving system is immediately switched to thetrapezoidal control before a rotation of 60° electricalangle completes.
Table 11-6. Motor Driving Controls during Reverse
Rotation
CW/CCW Pin
State
L(Forward)
H(Reverse)

11.7.7

Motor Direction

Driving System

Forward
ReverseForward
ReverseSinusoidal
Trapezoidal
Trapezoidal
Sinusoidal

Hall Signal Abnormality Detection

As Figure 11-19 shows, signals from the external Hall
elements are input into the corresponding comparators.
The IC then receives the comparator outputs as the
motor positional information, i.e., position sensing
signals.
When all the position sensing signals (HU, HV, HW)
are either in a high or low state, the Hall signal
abnormality detection function gets activated and turns
off the high- and low-side transistors. When the IC

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SIM2602M
detects input states other than those above, each of thehigh- and low-side transistors responds in accordancewith the input logic levels of the position sensing signals.
For the truth tables for the position sensing signals andthe output transistors, see Table 11-4 and Table 11-5.
While the function is being enabled, the FO pin becomes
logic high and sends fault signals.
VREG

RHI

CPH

U-phaseHall element

CH1

V-phaseHall element

CH2

W-phaseHall element

CH3

RHO

U1

6

HUP
15
HUN
14
HVP
13
HVN
12
HWP
10
HWN
9

HU
HV

Position
estimation

HW

COMx

Figure 11-19. Internal Circuit Diagram of HxP and
HxN Pins and Their Peripheral Circuit

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SIM2602M
12. Design Notes
12.1 PCB Pattern Layout
Figure 12-1 shows a schematic diagram of a motor
drive circuit. The circuit consists of current paths having
high frequencies and high voltages, which also bringabout negative influences on IC operation, noiseinterference, and power dissipation. Therefore, PCB
trace layouts and component placements play animportant role in circuit designing. Current loops, whichhave high frequencies and high voltages, should be as
small and wide as possible, in order to maintain a lowimpedance state. In addition, ground traces should be as
wide and short as possible so that radiated EMI levels
can be reduced.
VBB1
21
VBB2
29

● In the V- and W-phases, the low-side emitters areinternally connected to the LS2 pin.
● The high-side gates are internally pulled down to the
output pins.
● The low-side gates are internally pulled down to theCOMx pin.
The following are circuit diagrams representing
typical measurement circuits for breakdown voltage:
Figure 12-2 shows the high-side transistor (Q1H) in the
U-phase; Figure 12-3 shows the low-side transistor (Q1L)
in the U-phase. And all the pins that are not represented
in these figures are open. When measuring the high-side
transistors, leave all the non-measuring pins open. Whenmeasuring the low-side transistors, connect only themeasuring LSx pin to the COMx pin and leave the otherpins open.
VBB1
21
VBB2
29

VDC

A

CDC

Q1H
RS
33

Gate
Driver

U

27 V1
36 V2
W1
23
W2
40

Q2H

Q3H

Ground traces
should be wideand short.

23 W1
27 V1

MICs

M

U
33
36 V2
Q1L

Q2L

Q3L

40 W2

COM1 2
LS2
38
LS1
31

Figure 12-1.

COM2 11High-frequency, high-voltage
current loops should be as
small and wide as possible.

High-frequency, High-voltage Current
Paths

COM3 2038 LS231 LS1Figure 12-2. Typical Measurement Circuit for Highside Transistor (Q1H) in U-phase
21 VBB1

12.2 Considerations in IC Characteristics
Measurement
When measuring the leakage current of the output
transistors incorporated in the IC, note that all of theoutput (U, V1, V2, W1, W2), LSx, and COMx pins must
be appropriately connected. Otherwise, the output
transistors may result in permanent damage. Also notethat the gate and emitter of each output transistor shouldhave the same potential during the leakage current
measurement. Moreover, care should be taken during themeasurement because each output transistor is connected
as follows:● All the high-side collectors are internally connected to
the VBBx pin.
● In the U-phase, the high-side emitter and the low-sidecollector are internally connected to the U pin. (In theV- and W-phases, the high- and low-side transistors
are unconnected inside the IC.)

29 VBB2

Q1H

Q2H

Q3H
23 W1
27 V1

MICs

U
33
36 V2
Q1L

COM1
COM2
COM3

Q2L

Q3L

A

40 W2

2
11
20

38
31

LS2
LS1

Figure 12-3. Typical Measurement Circuit for Lowside Transistor (Q1L) in U-phase

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SIM2602M
12.3 Considerations in Heatsink Mounting
The following are the key considerations and theguidelines for mounting a heatsink:● A pair of a metric screw of M2.5 and a plain washerof 6.0 mm (φ) must be used. When tightening thescrews, use a torque screwdriver and tighten themwithin the range of screw torque defined in Section 4.
Be sure to avoid uneven tightening. Temporarily
tighten the two screws first, then tighten them equally
on both sides until the specified screw torque isreached.
● When mounting a heatsink, it is recommended to use
silicone greases. If a thermally conductive sheet or anelectrically insulating sheet is used, package cracks
may be occurred due to creases at screw tightening.
Therefore, you should conduct thorough evaluations
before using these materials.
● When applying a silicone grease, make sure that there
are no foreign substances between the IC and aheatsink. Extreme care should be taken not to apply asilicone grease onto any device pins as much as
possible. The following requirements must be met for
proper grease application:- Grease thickness: 100 μm- Heatsink flatness: ±100 μm- Apply a silicone grease within the area indicated in
Figure 12-4, below.
Screw hole

Screw hole

7.4

7.4

M2.5

1.25

Figure 12-4.

Thermal silicone
grease application area

Heatsink
31.3

M2.5

1.25

Unit: mm

Reference Application Area for Thermal
Silicone Grease

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SIM2602M

This section describes the procedures to calculate
power losses in switching transistors, and to estimate ajunction temperature. Note that the descriptions listed
here are applicable to the SIM2602M, which iscontrolled by a 3-phase sine-wave PWM driving
strategy.
For quick and easy references, we offer calculation
support tools online. Please visit our website to find out
more.
● DT0052: SIM2602M Calculation Tool
https://www.semicon.sanken-ele.co.jp/en/calctool/igbtall_caltool_en.html

IM is the effective motor current (A),α is the slope of the linear approximation in the
VCE(SAT) vs. IC curve, andβ is the intercept of the linear approximation in the
VCE(SAT) vs. IC curve.
VCC = 15 V

2.5

y = 0.19x + 0.92
2.0
25 °C

VCE(SAT) (V)

13. Calculating Power Losses andEstimating Junction Temperature

1.5
1.0
0.5
75 °C 125 °C
0.0
0Total power loss in an IGBT can be obtained bytaking the sum of steady-state loss, PON, and switching
loss, PSW. The following subsections contain themathematical procedures to calculate these losses (P ON
and PSW) and the junction temperature of all IGBTs
operating.

IGBT Steady-state Loss, PON

Steady-state loss in an IGBT can be computed byusing the VCE(SAT) vs. IC curves, listed in Section 14.3.1.
As expressed by the curves in Figure 13-1, linear
approximations at a range the IC is actually used are
obtained by: VCE(SAT) = α × IC + β. The values gained by
the above calculation are then applied as parameters inEquation (1), below. Hence, the equation to obtain the
IGBT steady-state loss, PON, is:
PON =

=

1 π
(φ) × IC (φ) × DT × dφ
∫ V
2π 0 CE(SAT)
1 1
4
α( +
M × cos θ) IM 2
2 2 3π√2 1 π+β ( + M × cos θ) IM .
π
2 8

Figure 13-1.

Where:VCE(SAT) is the collector-to-emitter saturation voltage of
the IGBT (V),IC is the collector current of the IGBT (A),DT is the duty cycle, which is given byDT =1 + M × sin(φ + θ)
,
2

3

4

5

Linear Approximate Equation of
VCE(SAT) vs. IC

IGBT Switching Loss, PSW

Switching loss in an IGBT, PSW, can be calculated by
Equation (2), letting IM be the effective current value ofthe motor:
PSW =

VDC
√2
× fC × αE × IM ×
.
π
300

(2)

Where:
fC is the PWM carrier frequency (Hz),VDC is the main power supply voltage (V), i.e., the
VBBx pin input voltage, andαE is the slope on the switching loss curve (see Section
14.3.2).

13.1.3(1)

2

IC (A)

13.1.213.1.1

1

Estimating Junction Temperatureof IGBTThe junction temperature of all IGBTs operating, T J,
can be estimated with Equation (3):
TJ = R (J−C)Q × {(PON + PSW ) × 6} + TC .

(3)

Where:
R(J-C)Q is the junction-to-case thermal resistance(°C/W) of all the IGBTs operating, andTC is the case temperature (°C), measured at the point
defined in Figure 3-2.

M is the modulation index (0 to 1),cosθ is the motor power factor (0 to 1),

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SIM2602M
14. Performance Curves
14.1 Transient Thermal Resistance Curves
The following graphs represent transient thermal resistance (the ratios of transient thermal resistance), with steadystate junction-to-case thermal resistance = 1. Note that the graph representing that of the IGBT-embedded device shows
only IGBT characteristics; no freewheeling diode characteristics are included.

Ratio of Transient Thermal Resistance

1.00

0.10

0.01
0.001

0.01

0.1

1

10

Time (s)Figure 14-1.

Transient Thermal Resistance

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SIM2602M
14.2 Performance Curves of Control Parts
Figure 14-2 to Figure 14-18 provide performance curves of the control parts integrated in the SIM2602M, including
variety-dependent characteristics and thermal characteristics. TJ represents the junction temperature of the control parts.
Table 14-1. Typical Characteristics of Control Parts
Figure Number
Figure 14-2
Figure 14-3
Figure 14-4
Figure 14-5
Figure 14-6
Figure 14-7
Figure 14-8
Figure 14-9
Figure 14-10
Figure 14-11
Figure 14-12
Figure 14-13
Figure 14-14
Figure 14-15
Figure 14-16
Figure 14-17
Figure 14-18

Figure Caption
Logic Supply Current, ICC vs. TC
Logic Supply Current, ICC vs. VCC Pin Voltage, VCC
Logic Supply Current in 1-phase Operation (VSP = 0 V), IBS vs. TC
Logic Supply Current in 1-phase Operation (VSP = 5.5 V), IBS vs. TC
High-side Logic Operation Start Voltage, VBS(ON) vs. TC
High-side Logic Operation Stop Voltage, VBS(OFF) vs. TC
Low-side Logic Operation Start Voltage, VCC(ON) vs. TC
Low-side Logic Operation Stop Voltage, VCC(OFF) vs. TC
UVLO_VB Filtering Time vs. TC
UVLO_VCC Filtering Time vs. TC
High Level Input Current 1 (LA, MLP, CW/CCW, FGSEL, or VSP Pin), IIN1 vs. TC
High Level Input Current 2 (OCP Pin), IIN2 vs. TC
VREG Pin Voltage, VREG vs. TC
Current Limit Reference Voltage, VLIM vs. TC
OCL Blanking Time, tBK(OCL) + Propagation Delay, tD vs. TC
OCP Threshold Voltage, VTRIP vs. TC
OCP Hold Time, tP vs. TC

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VCC = 15 V, VSP = 0 V

9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0

VSP = 0 V

8.0
Max.

7.0
6.0

Typ.
Min.

ICC (mA)

ICC (mA)

SIM2602M

5.0
4.0−30 °C

3.0
2.0
1.0
0.0

-30

0

30

60

90

120

150

12

13

14

15

TC (°C)

Figure 14-2.

Figure 14-3.

VBS = 15 V, VSP = 0 V

17

18

19

20

Logic Supply Current, ICC vs. VCC Pin
Voltage, VCC
VBS = 15 V, VSP = 5.4 V

250

200

200

150

Max.
Typ.
Min.

100

IBS (µA)

IBS (µA)

16

VCC (V)

Logic Supply Current, ICC vs. TC

250

50

Max.
Typ.

150

Min.
100
50

0
-30

0

30

60

90

120

0

150

-30

0

30

TC (°C)

Figure 14-4.

60

90

120

150

TC (°C)

Logic Supply Current in 1-phase Operation(VSP = 0 V), IBS vs. TC

Figure 14-5. Logic Supply Current in 1-phase
Operation (VSP = 5.5 V), IBS vs. TC

12.5

12.0

12.0

11.5

11.5

11.0
Max.

11.0

Typ.
10.5

Min.

VBS(OFF) (V)VBS(ON) (V)

125 °C
25 °C

Max.
Typ.

10.5
10.0

Min.

9.5

10.0

9.0

9.5
-30

0

30

60

90

120

150

-30

0

TC (°C)

Figure 14-6.

High-side Logic Operation Start Voltage,
VBS(ON) vs. TC

30

60

90

120

150

TC (°C)

Figure 14-7.

High-side Logic Operation Stop Voltage,
VBS(OFF) vs. TC

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SIM2602M
13.0

12.5
12.0

Max.

12.0

Typ.

11.5

Min.

11.0

VCC(OFF) (V)VCC(ON) (V)

12.5

11.5

Max.
Typ.

11.0

Min.

10.5
10.0

10.5

9.5

10.0
-30

0

30

60

90

120

-30

150

0

30

Low-side Logic Operation Start Voltage,
VCC(ON) vs. TC

5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

Max.
Typ.
Min.

-30

0

30

60

90

120

Figure 14-9.

UVLO_VCC Filtering Time (µs)

UVLO_VB Filtering Time (µs)

Figure 14-8.

Max.
Typ.
Min.

-30

0

Figure 14-11.

Max.

Typ.
Min.

60

90

120

150

IIN2 (µA)

IIN1 (µA)

UVLO_VB Filtering Time vs. TC

30

150

5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

150

VIN = VREG

0

120

30

60

90

120

150

TC (°C)

45
40
35
30
25
20
15
10
5
0
-30

90

Low-side Logic Operation Stop Voltage,
VCC(OFF) vs. TC

TC (°C)

Figure 14-10.

60

TC (°C)TC (°C)

VIN = VREG

45
40
35
30
25
20
15
10
5
0

Max.

Typ.
Min.

-30

TC (°C)

Figure 14-12. High Level Input Current 1 (LA, MLP,
CW/CCW, FGSEL, or VSP Pin), IIN1 vs. TC

UVLO_VCC Filtering Time vs. TC

0

30

60

90

120

150

TC (°C)

Figure 14-13.

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High Level Input Current 2 (OCP Pin),
IIN2 vs. TC

35

SIM2602M

0.33
0.32
Max.
Typ.
Min.

VLIM (V)VREG (V)

5.5
5.4
5.3
5.2
5.1
5.0
4.9
4.8
4.7
4.6
4.5

0.31

Max.

0.30

Typ.

0.29

Min.

0.28
-30

0

30

60

90

120

0.27

150

-30

0

30

TC (°C)VREG Pin Voltage, VREG vs. TC

5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

Figure 14-15.

90

120

150

Current Limit Reference Voltage, VLIM vs.
TC

0.65
0.63
Max.
Typ.
Min.

VTRIP (V)tBK(OCL) + tD (µs)

Figure 14-14.

60

TC (°C)

Max.

0.61

Typ.
0.59

Min.

0.57
0.55
-30

0

30

60

90

120

150

-30

0

30

60

90

120

150

TC (°C)TC (°C)

Figure 14-16. OCL Blanking Time, tBK(OCL) +Propagation Delay, tD vs. TC

Figure 14-17.

OCP Threshold Voltage, VTRIP vs. TC

18.0

tP (ms)

17.0
16.0

Max.

15.0

Typ.

14.0

Min.

13.0
12.0
-30

0

30

60

90

120

150

TC (°C)

Figure 14-18.

OCP Hold Time, tP vs. TC

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SIM2602M
14.3 Performance Curves of Output Parts
14.3.1

Transistor Characteristics
VCC = 15 V

2.5

3.0
2.5

25 °C
1.5

VF (V)VCE(SAT) (V)

2.0

1.0

2.0

25 °C

1.5
1.0

0.5
0.0
0

1

75 °C

0.5

125 °C

75 °C

2

3

4

125 °C

0.0

5

0

1

2

IC (A)

Figure 14-19.

14.3.2

3

4

5

IF (A)IGBT VCE(SAT) vs. IC

Figure 14-20.

Freewheeling Diode VF vs. IF

Switching Losses

Conditions: VBBx pin voltage = 300 V, half-bridge circuit with inductive load.
Switching Loss, E, is the sum of turn-on loss and turn-off loss.

VBx = 15 V

400
350

350

300

300

TJ = 125 °C

250

TJ = 125 °C

250

200

E (µJ)E (µJ)VCC = 15 V

400

150
100

200
150
100

TJ = 25 °C

50
0
0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

TJ = 25 °C

50
5.0

0
0.0

0.5

1.0

1.5

IC (A)

Figure 14-21.

High-side Switching Loss

2.0

2.5

3.0

3.5

4.0

4.5

5.0

IC (A)

Figure 14-22.

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Low-side Switching Loss

37

SIM2602M
14.4 Allowable Effective Current Curves
The following curves represent allowable effective currents in 3-phase sine-wave PWM driving with parameters suchas typical RDS(ON) or VCE(SAT), and typical switching losses.
Operating conditions: VBBx pin input voltage, VDC = 300 V; VCC pin input voltage, VCC = 15 V; modulation index,
M = 0.9; motor power factor, cosθ = 0.8; junction temperature, T J = 150 °C.

Allowable Effective Current (Arms)

5.0

4.0

3.0

2.0

1.0

0.0
25

50

75

100

125

150

TC (°C)
Figure 14-23.

Allowable Effective Current (fC = 17 kHz)14.5 Short Circuit SOA (Safe Operating Area)
Conditions: VDC ≤ 400 V, 13.5 V ≤ VCC ≤ 16.5 V, TJ = 125 °C, 1 pulse.

Collector Current, IC(Peak) (A)

100
75
50
25

Short Circuit SOA

0
0

1

2

3

4

5

Pulse Width (µs)
Figure 14-24.

Short Circuit SOA

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SIM2602M
15. Pattern Layout Example
This section contains the schematic diagrams of a PCB pattern layout example using an SIM2602M device. For
details on the land pattern example of the IC, see Section 9.

(Top View)(Bottom View)
Figure 15-1.

Pattern Layout Example

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2 3 4

R8

R9

R7

1

C9

R10

SW1

RV1

R5

7 6 5

R6

R3

8

IPM1

3 LA
4 MLP

JP5

JP3

JP1

R4

JP6

JP2

JP4

R2

C7

R1

SIM2602M

J2
1
2
3
4
5
6
7
8

C11
C3

C2

W2 40
LS2 38V2 36

5 OCP
6 VREG VB1 34
7 CW/CCW
8 FGSELU 33
9 HWN
LS1 31
10 HWP
11 COM2 VBB2 29
12 HVN
V1 27
13 HVP
14 HUN

J5

C4

C5

C6

1
2
3
4
5

J4
1
2
3

C1
15 HUP
16 VSP

R11

J1

JP7

1
2
3
4
5
6
7
8

VB2 26
VB3 24

W1 23
17 FG
18 FO
19 VCC

R12
JP8

J3
1

D2

C13

C12

C8

C10

D1

R13

R14

R15

C14

2

Figure 15-2.

Circuit Diagram of PCB Pattern Layout Example

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SIM2602M
16. Typical Motor Driver Application
This section contains the information on the typical motor driver application (which uses signals input from the Hall
elements) listed in the previous section, including a circuit diagram, specifications, and the bill of the materials used.
● Motor Driver Specifications
IC
Main Supply Voltage, VDC
Rated Output PowerSIM2602M
300 VDC (typ.)
150 W● Circuit Diagram
See Figure 15-2.
● Bill of Materials
SymbolPart Type(1)
Ceramic
C1(1)
Ceramic
C2
Ceramic
C3(1)Ceramic
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
J1
J2
J3
J4
J5
R1
R2
R3
R4
R5

Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Electrolytic
Ceramic
Ceramic
Pin header
Pin header
Pin header
Pin header
Pin header
GeneralGeneralGeneralGeneralGeneralRatings
Open
Open
Open
1 μF, 35 V
1 μF, 35 V
1 μF, 35 V
0.1 μF, 35 V
0.1 μF, 35 V
0.1 μF, 35 V
2200 pF, 35 V
0.1 μF, 35 V
100 μF, 35 V
0.1 μF, 35 V
0.1 μF, 630 V
1 n he1 n he1 n heEquiv. to B2P3-VH
Equiv. to B3P5-VH
2.2 kΩ, 0.25 W
2.2 kΩ, 0.25 W
Short
Open
Short

Symbol
R6
R7
R8
R9
R10
R11(2)
R12
R13
R14
R15
RV1
SW1
JP1(3)(4)
JP2(3)(4)
JP3(3)(4)
JP4(3)(4)
JP5(3)(4)
JP6(3)(4)
JP7(5)
JP8
D1
D2
IPM1

Part Type
GeneralGeneralGeneralGeneralGeneralGeneralGeneralMetal plate
Metal plate
Metal plate
Trimmer
SwitchJumperJumperJumperJumperJumperJumperJumperJumper
General
Zener
IC

Ratings
Open
Short
Open
Short
1 kΩ, 0.25 W
Open100 Ω, 0.25 W
0.33 Ω, 1 W
0.33 Ω, 1 WOpen
10 kΩ, 0.25 W
1 × 04
Open
Open
Open
Open
Open
Open
Short
Open
1 A, 50 V
VZ = 20 V, 0.5 W
SIM2602M(1)

Refers to a noise filter capacitor for Hall element signals; should be connected as needed.
Refers to a noise filter resistor for a motor speed control signal input to the VSP pin; should be connected as needed.
(3)
When inputting Hall IC signals for detecting a south pole: set JP1, JP3, JP5 = short; set JP2, JP4, JP6 = open.
(4)
When inputting Hall IC signals for detecting a north pole: set JP1, JP3, JP5 = open; set JP2, JP4, JP6 = short.
(5)Should be opened when R11 is connected; should be shorted when R11 is not connected.
(2)

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SIM2602M
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DSGN-CEZ-16003

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