600 V High Voltage 3-phase Motor Drivers

SIM689xM Series

Data Sheet

Description

Package

The SIM689xM series are high voltage 3-phase motor
drivers in which transistors, pre-drive circuits, andbootstrap circuits (diodes and resistors) are highly
integrated. These products can optimally control theinverter systems of low- to medium-capacity motors that
require universal input standards.

DIP40
Mold Dimensions: 36.0 mm × 14.8 mm × 4.0 mm● Pb-free (RoHS Compliant)● Temperature Sensing Function● Built-in Bootstrap Diodes with Current Limiting
Resistors (60 Ω)● CMOS-compatible Input (3.3 V or 5 V)
● Isolation Voltage: 1500 V (for 1 min)
UL-recognized Component (File No.: E118037)● Fault Signal Output at Protection Activation (FO Pin)
● Protections Include:
Overcurrent Protection (OCP): Auto-restart
Undervoltage Lockout for Power Supply
High-side (UVLO_VB): Auto-restartLow-side (UVLO_VCC): Auto-restart
Thermal Shutdown (TSD): Auto-restart

Typical Application (SIM6891MD)
VB1A
VCC

VCC1 17

21
30

VB1B
CB1

20 VB2CB223 VB3
COM1 16
HIN3 15
HIN2 14
HIN1 13

HIN3
HIN2

CB3

VDC
High-side
MIC

DVT
VT

9
LIN2 8LIN1 7
COM2 6
VCC2 5

LIN2
LIN1

5V

RFO

Low-side
MIC

26 V1
35 V2

M

W1
24
37 W2

CS

FO 4
OCP
3

Fault

20

21
Leadform 2971
Not to scale

Selection Guide● Breakdown Voltage: 600 V
IO

Part Number

2.5 A

SIM6891MD

2.5 A

SIM6891MDN*

5A

SIM6893M

3A

SIM6896M

5A

SIM6892M

5A

SIM6895M

FeaturePower MOSFET,
low switching dissipation
Power MOSFET,
noise reduction
Power MOSFET
IGBT with FRD
IGBT with FRD,
low switching dissipation
IGBT with FRD,
noise reduction* Under development

For motor drives such as:

19 V

RVT LIN3

20
21

Applications

31 U

(NC)
12
VT 10

CVT

Controller

28VBB

Controller
power supply

LIN3

40
1

Features

HIN1

1

40

CDC

● Refrigerator Compressor Motor● Fan Motor and Pump Motor for Washer and Dryer● Fan Motor for Air Conditioner● Fan Motor for Air Purifier

LS1

CFO
RO

11
LS2 2
LS3A 133 LS240 LS3B

RS
CO
GND

SIM689xM-DSE Rev.3.6
SANKEN ELECTRIC CO., LTD.
Jul. 24, 2024
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2021

1

SIM689xM Series
Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings----------------------------------------------------------------------------- 4
2. Recommended Operating Conditions ----------------------------------------------------------------- 5
3. Electrical Characteristics -------------------------------------------------------------------------------- 6
3.1 Characteristics of Control Parts------------------------------------------------------------------ 6
3.2 Bootstrap Diode Characteristics ----------------------------------------------------------------- 7
3.3 Thermal Resistance Characteristics ------------------------------------------------------------- 8
3.4 Transistor Characteristics ------------------------------------------------------------------------- 9
3.4.1
SIM6891MD ------------------------------------------------------------------------------------ 9
3.4.2
SIM6892M ------------------------------------------------------------------------------------ 10
3.4.3
SIM6893M ------------------------------------------------------------------------------------ 11
3.4.4
SIM6895M ------------------------------------------------------------------------------------ 11
3.4.5
SIM6896M ------------------------------------------------------------------------------------ 12
4. Mechanical Characteristics --------------------------------------------------------------------------- 13
5. Insulation Distance -------------------------------------------------------------------------------------- 13
6. Truth Table----------------------------------------------------------------------------------------------- 14
7. Block Diagrams ------------------------------------------------------------------------------------------ 15
8. Pin Configuration Definitions------------------------------------------------------------------------- 16
9. Typical Applications ------------------------------------------------------------------------------------ 17
10. Physical Dimensions ------------------------------------------------------------------------------------ 18
11. Marking Diagram --------------------------------------------------------------------------------------- 20
12. Functional Descriptions -------------------------------------------------------------------------------- 21
12.1 Turning On and Off the IC ---------------------------------------------------------------------- 21
12.2 Pin Descriptions ----------------------------------------------------------------------------------- 21
12.2.1 U, V, V1, V2, W1, and W2 ----------------------------------------------------------------- 21
12.2.2 VB1A, VB1B, VB2, and VB3 -------------------------------------------------------------- 21
12.2.3 VCC1 and VCC2 ---------------------------------------------------------------------------- 22
12.2.4 COM1 and COM2--------------------------------------------------------------------------- 23
12.2.5 HIN1, HIN2, and HIN3; LIN1, LIN2, and LIN3 -------------------------------------- 23
12.2.6 VBB -------------------------------------------------------------------------------------------- 24
12.2.7 LS1, LS2, LS3A, and LS3B ---------------------------------------------------------------- 24
12.2.8 OCP -------------------------------------------------------------------------------------------- 24
12.2.9 FO ---------------------------------------------------------------------------------------------- 24
12.2.10 VT ---------------------------------------------------------------------------------------------- 24
12.3 Temperature Sensing Function ----------------------------------------------------------------- 24
12.4 Protection Functions ------------------------------------------------------------------------------ 25
12.4.1 Fault Signal Output ------------------------------------------------------------------------- 25
12.4.2 Undervoltage Lockout for Power Supply (UVLO) ----------------------------------- 25
12.4.3 Overcurrent Protection (OCP) ----------------------------------------------------------- 26
12.4.4 Thermal Shutdown (TSD) ----------------------------------------------------------------- 27
13. Design Notes ---------------------------------------------------------------------------------------------- 28
13.1 PCB Pattern Layout ------------------------------------------------------------------------------ 28
13.2 Considerations in Heatsink Mounting -------------------------------------------------------- 28
13.3 Considerations in IC Characteristics Measurement --------------------------------------- 29
14. Calculating Power Losses and Estimating Junction Temperatures --------------------------- 30
14.1 IGBT ------------------------------------------------------------------------------------------------- 30
14.1.1 IGBT Steady-state Loss, PON -------------------------------------------------------------- 30
14.1.2 IGBT Switching Loss, PSW ----------------------------------------------------------------- 30

SIM689xM-DSE Rev.3.6
SANKEN ELECTRIC CO., LTD.
Jul. 24, 2024
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2021

2

SIM689xM Series
14.1.3 Estimating Junction Temperature of IGBT -------------------------------------------- 31
14.2 Power MOSFET ----------------------------------------------------------------------------------- 31
14.2.1 Power MOSFET Steady-state Loss, PRON ---------------------------------------------- 31
14.2.2 Power MOSFET Switching Loss, PSW --------------------------------------------------- 31
14.2.3 Body Diode Steady-state Loss, PSD ------------------------------------------------------- 32
14.2.4 Estimating Junction Temperature of Power MOSFET ------------------------------ 32
15. Performance Curves ------------------------------------------------------------------------------------ 33
15.1 Performance Curves of Control Parts--------------------------------------------------------- 33
15.2 Transient Thermal Resistance Curves -------------------------------------------------------- 38
15.3 Performance Curves of Output Parts --------------------------------------------------------- 40
15.3.1 Output Transistor Performance Curves ------------------------------------------------ 40
15.3.2 Switching Loss Curves --------------------------------------------------------------------- 42
15.4 Allowable Effective Current Curves----------------------------------------------------------- 45
15.4.1 SIM6891MD ---------------------------------------------------------------------------------- 45
15.4.2 SIM6893M ------------------------------------------------------------------------------------ 47
15.4.3 SIM6896M ------------------------------------------------------------------------------------ 48
15.4.4 SIM6892M ------------------------------------------------------------------------------------ 49
15.4.5 SIM6895M ------------------------------------------------------------------------------------ 50
15.5 Short Circuit SOAs (Safe Operating Areas) ------------------------------------------------- 51
16. Pattern Layout Example ------------------------------------------------------------------------------- 52
17. Typical Motor Driver Application ------------------------------------------------------------------- 54
Important Notes ---------------------------------------------------------------------------------------------- 55

SIM689xM-DSE Rev.3.6
SANKEN ELECTRIC CO., LTD.
Jul. 24, 2024
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2021

3

SIM689xM Series
1.

Absolute Maximum Ratings

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25 °C, COM1 = COM2 = COM.
Parameter
SymbolConditions
Rating
Unit
Remarks
SIM6892M
Main Supply Voltage
VDC
VBB–LSx
450
V
SIM6895M(DC)(1)
SIM6896M
SIM6892M
Main Supply Voltage
V
VBB–LSx
500
V
SIM6895M
DC(SURGE)(Surge)(1)SIM6896M
VCC = 15 V,
SIM6891MD
VDSS
ID = 100 μA,
600
VSIM6891MDN
VIN = 0 V
SIM6893M
IGBT / Power MOSFET
Breakdown Voltage
VCC = 15 V,
SIM6892M
VCES
IC = 1 mA,
600
V
SIM6895M
VIN = 0 V
SIM6896M
VB1B–U,
Logic Supply Voltage
VBS
VB2–V,20
V
VB3–W1
SIM6891MD
2.5
SIM6891MDN
TC = 25 °C,
3SIM6896M
Output Current(2)IO
A
TJ < 150 °C
SIM6892M
5
SIM6893M
SIM6895M
SIM6891MD
3.75
SIM6891MDN
TC = 25 °C,
VCC = 15 V,
4.5
SIM6896M
Output Current (Pulse)
IOP
A
pulse width ≤ 100 μs,
SIM6892M
single pulse
7.5
SIM6893M
SIM6895M
HINx–COM,
Input Voltage
VIN−0.5 to 7
V
LINx–COM
FO Pin Voltage
VFO
FO–COM−0.5 to 7V
OCP Pin Voltage
VOCP
OCP–COM−0.5 to 7
V
LSx Pin Voltage (DC)VLS(DC)
LSx–COM−0.5 to 7
V
LSx Pin Voltage (Surge)
VLS(SURGE) LSx–COM−4 to 7
V
Operating Case
TC(OP)−30 to 100°C
Temperature(3)Junction Temperature(4)
TJ
150
°C
Storage Temperature
TSTG−40 to 150°C
Between surface of the
Isolation Voltage(5)VISO(RMS) case and each pin; AC,
1500
V
60 Hz, 1 min(1)Defined for the IGBT-embedded device only.
Should be derated depending on an actual case temperature. See Section 15.4.
(3)
Refers to a case temperature measured during IC operation.
(4)
Refers to the junction temperature of each chip built in the IC, including the control MICs, transistors, andfreewheeling diodes.
(5)
Refers to voltage conditions to be applied between all of the pins and the case. All the pins have to be shorted.
(2)

SIM689xM-DSE Rev.3.6
SANKEN ELECTRIC CO., LTD.
Jul. 24, 2024
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4

SIM689xM Series
2.

Recommended Operating Conditions
Unless specifically noted, COM1 = COM2 = COM.
Parameter
SymbolConditions

Min.

Typ.

Max.

Unit

VDC

VBB–COM

—

300

400

V

VCC

VCCx–COM
VB1B–U,
VB2–V,
VB3–W1

13.5

15.0

16.5

V

13.5

—

16.5

V

VIN

0

—

5.5

V

tIN(MIN)ON

0.5

—

—

μs

tIN(MIN)OFF

0.5

—

—

μs

Dead Time of Input Signal

tDEAD

1.5

—

—

μs

FO Pin Pull-up Voltage

VFO

3.0

—

5.5

V

FO Pin Pull-up Resistor

RFO

3.3

—

10

kΩ

FO Pin Noise Filter Capacitor

CFO

0.001

—

0.01

μF

Bootstrap Capacitor

CBOOT

1

—

220

μF

RVT

100

—

—

kΩ

CVT

0.001

—

0.01

μF

IOP ≤ 3.75 A

144

—

—

IOP ≤ 4.5 A

120

—

—

72

—

—

Main Supply Voltage
Logic Supply Voltage

VBS

Input Voltage(HINx, LINx, OCP)
Minimum Input Pulse Width

VT Pin Pull-down Resistor(1)

VT Pin Capacitor

Shunt Resistor(2)RS

IOP ≤ 7.5 AmΩ

RC Filter Resistor

RO

—

—

100

Ω

RC Filter Capacitor

CO

1000

—

2200

pF

PWM Carrier Frequency

fC

—

—

20

kHz

TC(OP)

—

—

100

°C

Operating Case Temperature(1)(2)

Remarks

SIM6891MD
SIM6891MDN
SIM6896M
SIM6892M
SIM6893M
SIM6895M

Refers to a combined resistance with the input impedance of the microcontroller.
Should be a low-inductance resistor.

SIM689xM-DSE Rev.3.6
SANKEN ELECTRIC CO., LTD.
Jul. 24, 2024
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 20215

SIM689xM Series
3.

Electrical Characteristics

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25 °C, VCC = 15 V, COM1 = COM2 = COM.

3.1

Characteristics of Control Parts
Parameter

SymbolPower Supply Operation
Low-side Logic Operation Start
VoltageLow-side Logic Operation Stop
Voltage

VCC(ON)

Min.

Typ.

Max.

Unit

VCCx–COM

10.5

11.5

12.5

V

VCC(OFF) VCCx–COM

10.0

11.0

12.0

V

9.5

10.5

11.5

V

9.0

10.0

11.0

V

—

2.0

—

mA

—

85

170

μA

VIH

—

2.0

2.5

V

VIL

1.0

1.5

—

V

High-side Logic Operation Start
Voltage

VBS(ON)

High-side Logic Operation Stop
Voltage

VBS(OFF)

ICC
Logic Supply Current
IBS
Input Signal
High Level Input Threshold
Voltage (HINx, LINx)
Low Level Input Threshold
Voltage (HINx, LINx)
High Level Input Current(HINx, LINx)
Low Level Input Current(HINx, LINx)
Fault Signal Output
FO Pin Voltage at Fault Signal
OutputFO Pin Voltage in Normal
Operation
Protection

Conditions

VB1B–U,
VB2–V,
VB3–W1VB1B–U,
VB2–V,
VB3–W1
Total sink current of
the VCC1 and VCC2
pins.
VB1B–U or VB2–V or
VB3–W1; HINx = 5 V;
VBx pin current in
1-phase operation

IIH

VIN = 5 V

—

230

500

μA

IIL

VIN = 0 V

—

—

2

μA

0

—

0.5

V

4.8

—

—

V

VTRIP

0.46

0.50

0.54

V

tP

5.0

10.0

—

ms

OCP Blanking Time
Temperature Sensing
Voltage*
TSD Operating Temperature*tBK(OCP)

—

2

—

μs

2.997

3.155

3.313

V

TDH

135

150

165

°C

TSD Releasing Temperature*

TDL

105

120

135

°C

OCP Threshold Voltage
OCP Hold Time

VFOL
VFOH

VT

VFO = 5 V,
RFO = 10 kΩ
VFO = 5 V,
RFO = 10 kΩ

TJ(MIC) = 125 °C

Remarks* Determined by the junction temperature of the control parts, but not of the output transistors.

SIM689xM-DSE Rev.3.6
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Jul. 24, 2024
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SIM689xM Series

3.2

Bootstrap Diode Characteristics

Parameter
Bootstrap Diode Leakage
Current
Bootstrap Diode Forward
Voltage
Bootstrap Diode Series
Resistor

SymbolConditions

Min.

Typ.

Max.

Unit

ILBD

VR = 600 V

—

—

10

μA

VFB

IFB = 0.15 A

—

1.0

1.3

V

45

60

75

Ω

RB

SIM689xM-DSE Rev.3.6
SANKEN ELECTRIC CO., LTD.
Jul. 24, 2024
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2021

Remarks7

SIM689xM Series
3.3

Thermal Resistance Characteristics
Parameter

Junction-to-Case Thermal
Resistance(1)Junction-to-Ambient
Thermal Resistance

SymbolConditions

Min.

Typ.

Max.

Unit

RJ-C

All power MOSFETs
operating

—

—

3.6

°C/W

R(J-C)Q(2)All IGBTs operating

—

—

3.6

°C/W

R(J-C)F(3)All freewheeling
diodes operating

—

—

4.2

°C/W

RJ-A

All power MOSFETs
operating

—

—

25

°C/W

R(J-A)Q

All IGBTs operating

—

—

25

°C/W

R(J-A)F

All freewheeling
diodes operating

—

—

29

°C/W

Remarks
SIM6893M
SIM6891MD
SIM6891MDN
SIM6892M
SIM6895M
SIM6896M
SIM6892M
SIM6895M
SIM6896M
SIM6893M
SIM6891MD
SIM6891MDN
SIM6892M
SIM6895M
SIM6896M
SIM6892M
SIM6895M
SIM6896M(1)

Refers to a case temperature at the measurement point described in Figure 3-1, below.
Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient
thermal characteristics, see Section 15.2.
(3)
Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case.
(2)

Measurement point
21

40

5 mm

1

20

Figure 3-1. Case Temperature Measurement Point

SIM689xM-DSE Rev.3.6
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Jul. 24, 2024
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8

SIM689xM Series
3.4

Transistor Characteristics

Figure 3-2 provides the definitions of switching characteristics described in this and the following sections. The
SIM6891MD, SIM6891MDN, and SIM6893M are ICs having built-in power MOSFETs; the SIM6892M, SIM6895M,
and SIM6896M are ICs incorporating IGBTs and freewheeling diodes.
HINx/
LINx
0

trr

ton
td(on) tr

ID / IC

toff
td(off) tf
90%

10%

0

VDS /
VCE

0

Figure 3-2. Switching Characteristics Definitions

3.4.1

SIM6891MD
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

Drain-to-Source Leakage Current

IDSS

VDS = 600 V, VIN = 0 V

—

—

100

µA

Drain-to-Source On-resistanceSource-to-Drain Diode Forward
Voltage
High-side Switching
Source-to-Drain Diode Reverse
Recovery Time
Turn-on Delay Time

RDS(ON)

ID = 1.25 A, VIN = 5 V

—

2.0

2.5

Ω

VSD

ISD = 1.25 A, VIN = 0 V

—

1.0

1.5

V

—

100

—

ns

—

425

—

ns

—

50

—

ns

—

350

—

ns

Rise Time
Turn-off Delay Timetrrtd(ON)trtd(OFF)VDC = 300 V, ID = 1.25 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load

Fall Time

tf

—

35

—

ns

Low-side Switching
Source-to-Drain Diode Reverse
Recovery Time
Turn-on Delay Time

trr

—

100

—

ns

—

425

—

ns

—

55

—

ns

—

365

—

ns

—

20

—

ns

Rise Time
Turn-off Delay Time
Fall Timetd(ON)trtd(OFF)VDC = 300 V, ID = 1.25 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive loadtf

SIM689xM-DSE Rev.3.6
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Jul. 24, 2024
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9

SIM689xM Series
3.4.2

SIM6891MDN
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

Drain-to-Source Leakage Current

IDSS

VDS = 600 V, VIN = 0 V

—

—

100

µA

Drain-to-Source On-resistanceSource-to-Drain Diode Forward
Voltage
High-side Switching
Source-to-Drain Diode Reverse
Recovery Time
Turn-on Delay Time

RDS(ON)

ID = 1.25 A, VIN = 5 V

—

2.0

2.5

Ω

VSD

ISD = 1.25 A, VIN = 0 V

—

1.0

1.5

V

—

140

—

ns

—

690

—

ns

—

115

—

ns

—

350

—

ns

—

25

—

ns

—

165

—

ns

—

690

—

ns

—

115

—

ns

—

380

—

ns

—

25

—

ns

Rise Timetrrtd(ON)
tr

Turn-off Delay Timetd(OFF)

Fall Timetf

Low-side Switching
Source-to-Drain Diode Reverse
Recovery Time
Turn-on Delay Time

trr

Rise Timetr

Turn-off Delay Time
Fall Time

3.4.3

td(ON)
td(OFF)VBB = 300 V, ID = 1.25 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load

VBB = 300 V, ID = 1.25 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive loadtf

SIM6892M

Parameter
Collector-to-Emitter Leakage
Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage

SymbolConditions

Min.

Typ.

Max.

Unit

ICES

VCE = 600 V, VIN = 0 V

—

—

1

mA

VCE(SAT)IC = 5.0 A, VIN = 5 V

—

1.75

2.20

V

VF

IF = 5.0 A, VIN = 0 V

—

2.0

2.4

V

—

100

—

ns

—

530

—

ns

—

110

—

ns

—

740

—

ns

tf

—

210

—

ns

Diode Reverse Recovery Time

trr

—

100

—

ns

Turn-on Delay Timetd(ON)

—

550

—

ns

—

110

—

ns

—

600

—

ns

—

210

—

ns

High-side Switching
Diode Reverse Recovery Timetrr

Turn-on Delay Timetd(ON)

Rise Time
Turn-off Delay Time
Fall Timetrtd(OFF)VDC = 300 V, IC = 5.0 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load

Low-side Switching

Rise Time
Turn-off Delay Time
Fall Timetrtd(OFF)VDC = 300 V, IC = 5.0 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive loadtf

SIM689xM-DSE Rev.3.6
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Jul. 24, 2024
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10

SIM689xM Series
3.4.4

SIM6893M
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

Drain-to-Source Leakage Current

IDSS

VDS = 600 V, VIN = 0 V

—

—

100

µA

Drain-to-Source On-resistanceSource-to-Drain Diode Forward
Voltage
High-side Switching
Source-to-Drain Diode Reverse
Recovery Time
Turn-on Delay Time

RDS(ON)

ID = 2.5 A, VIN = 5 V

—

0.45

0.60

Ω

VSD

ISD = 2.5 A, VIN = 0 V

—

1.0

1.6

V

—

85

—

ns

—

470

—

ns

—

40

—

ns

—

410

—

ns

Rise Timetrrtd(ON)
tr

Turn-off Delay Timetd(OFF)VDC = 300 V, ID = 2.5 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load

Fall Time

tf

—

30

—

ns

Low-side Switching
Source-to-Drain Diode Reverse
Recovery Time
Turn-on Delay Time

trr

—

80

—

ns

—

480

—

ns

—

40

—

ns

—

670

—

ns

—

30

—

ns

Rise Timetr

Turn-off Delay Time
Fall Time

3.4.5

td(ON)

td(OFF)VDC = 300 V, ID = 2.5 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive loadtf

SIM6895M

Parameter
Collector-to-Emitter Leakage
Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage

SymbolConditions

Min.

Typ.

Max.

Unit

ICES

VCE = 600 V, VIN = 0 V

—

—

1

mA

VCE(SAT)IC = 5.0 A, VIN = 5 V

—

1.75

2.20

V

VF

IF = 5.0 A, VIN = 0 V

—

2.0

2.4

V

—

100

—

ns

—

760

—

ns

—

180

—

ns

—

500

—

ns

tf

—

230

—

ns

Diode Reverse Recovery Time

trr

—

100

—

ns

Turn-on Delay Timetd(ON)

—

840

—

ns

—

240

—

ns

—

510

—

ns

—

230

—

ns

High-side Switching
Diode Reverse Recovery Timetrr

Turn-on Delay Timetd(ON)

Rise Time
Turn-off Delay Time
Fall Timetrtd(OFF)VDC = 300 V, IC = 5.0 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load

Low-side Switching

Rise Time
Turn-off Delay Time
Fall Timetrtd(OFF)VDC = 300 V, IC = 5.0 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive loadtf

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SIM689xM Series
3.4.6

SIM6896M

Parameter
Collector-to-Emitter Leakage
Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage

SymbolConditions

Min.

Typ.

Max.

Unit

ICES

VCE = 600 V, VIN = 0 V

—

—

1

mA

VCE(SAT)IC = 3.0 A, VIN = 5 V

—

1.85

2.30

V

VF

IF = 3.0 A, VIN = 0 V

—

2.0

2.4

V

—

125

—

ns

—

630

—

ns

—

115

—

ns

—

470

—

ns

tf

—

250

—

ns

Diode Reverse Recovery Time

trr

—

130

—

ns

Turn-on Delay Timetd(ON)

—

700

—

ns

—

140

—

ns

—

540

—

ns

—

200

—

ns

High-side Switching
Diode Reverse Recovery Timetrr

Turn-on Delay Timetd(ON)

Rise Time
Turn-off Delay Time
Fall Timetrtd(OFF)VDC = 300 V, IC = 3.0 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive load

Low-side Switching

Rise Time
Turn-off Delay Time
Fall Timetrtd(OFF)VDC = 300 V, IC = 3.0 A,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C,
inductive loadtf

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SIM689xM Series
4.

Mechanical Characteristics

Parameter
Conditions
Min.
Typ.
Max.
Unit
Remarks
Heatsink Mounting
*
0.294
—
0.441
N∙m
Screw Torque
Flatness of Heatsink
See Figure 4-1.
0
—
100
μm
Attachment Area
Package Weight
—
5.2
—
g
* Requires using a metric screw of M2.5 and a plain washer of 6.0 mm (φ). For more on screw tightening, see Section
13.2.

Heatsink

Measurement position

-+

-

+

Heatsink

Figure 4-1. Flatness Measurement Position

5.

Insulation DistanceParameter

Clearance

Conditions
Between heatsink* andleads. See Figure 5-1.

Min.

Typ.

Max.

Unit

1.5

—

2.1

mm

Remarks

Creepage
1.7——mm* Refers to when a heatsink to be mounted is flat. If your application requires a clearance exceeding the maximum
distance given above, use an alternative (e.g., a convex heatsink) that will meet the target requirement.

Creepage
Clearance

Heatsink

Figure 5-1. Insulation Distance Definitions

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SIM689xM Series
6.

Truth Table

Table 6-1 is a truth table that provides the logic level definitions of operation modes.
In the case where HINx and LINx pin signals in each phase are high at the same time, both the high- and low-side
transistors become on (simultaneous on-state). Therefore, HINx and LINx signals, the input signals for the HINx and
LINx pins, require dead time setting so that such a simultaneous on-state event can be avoided.
After the IC recovers from a UVLO_VCC condition, the high- and low-side transistors resume switching, according
to the input logic levels of the HINx and LINx signals (level-triggered).
After the IC recovers from a UVLO_VB condition, the high-side transistors resume switching at the next rising edgeof an HINx signal (edge-triggered).
Table 6-1. Truth Table for Operation Modes
Mode

Normal Operation

Undervoltage Lockout for Highside Power Supply (UVLO_VB)

Undervoltage Lockout for Lowside Power Supply (UVLO_VCC)

Overcurrent Protection (OCP)

Thermal Shutdown (TSD)

HINx
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H

LINx
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H

High-side Transistor
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
ON
OFF
ON
OFF
ON

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Low-side Transistor
OFF
OFF
ON
ON
OFF
OFF
ON
ON
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF

14

SIM689xM Series
7.

Block Diagrams
30 VB1B

21 VB1A
20 VB223 VB3(NC) 12
VCC1 17

HIN3 15
HIN2 14
HIN1 13
COM1 16

UVLO

UVLO

Input
Logic

UVLO

UVLO

High-side
Level Shift Driver

High-side MIC

VCC2 5
Low-side MIC
LIN3
LIN2
LIN1
COM2

9
8
7
6

VREG

UVLO

Reg. UVLO

LowsideDriverInput Logic

ThermalMonitor

VT 10
VREG
FO 4

OCP 3

OCP

28 VBB

24 W1
19
V
26
V1
31 U
35 V2
37 W2

11 LS133 LS22 LS240 LS3B
1 LS3A

ThermalShutdown

Figure 7-1. Block Diagram: SIM6891MD/91MDN/93M
30 VB1B
21 VB1A
20 VB223 VB3(NC) 12
VCC1 17

HIN3 15
HIN2 14
HIN1 13
COM1 16

UVLO

UVLO

Input
Logic

UVLO

UVLO

High-side
Level Shift Driver

High-side MIC

VCC2 5
UVLO

Low-side MIC
LIN3
LIN2
LIN1
COM2

9
8
7
6

VREG

Reg. UVLO

LowsideDriverInput Logic

ThermalMonitor

VT 10
VREG
FO 4

OCP 3

OCP

28 VBB

24 W1
19
V
26
V1
31 U
35 V2
37 W2

11 LS133 LS22 LS240 LS3B
1 LS3A

ThermalShutdown

Figure 7-2. Block Diagram: SIM6892M/95M/96M

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SIM689xM Series
8.

Pin Configuration Definitions
Top View

1
40

40

40

21

1

20

1
20
21
20
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40

Pin Name
LS3A
LS2
OCP
FO
VCC2
COM2
LIN1
LIN2
LIN3
VT
LS1
NC
HIN1
HIN2
HIN3
COM1
VCC1
—
V
VB2
VB1A
—
VB3
W1
—
V1
—
VBB
—
VB1B
U
—
LS2
—
V2
—
W2
—
—
LS3B

21
Description
W-phase low-side power MOSFET source or IGBT emitter
V-phase low-side power MOSFET source or IGBT emitter
Input for overcurrent protection
Fault signal output
Low-side logic supply voltage input
Low-side logic ground
Logic input for U-phase low-side gate driver
Logic input for V-phase low-side gate driver
Logic input for W-phase low-side gate driver
Temperature sensing voltage output
U-phase low-side power MOSFET source or IGBT emitter(No connection)
Logic input for U-phase high-side gate driver
Logic input for V-phase high-side gate driver
Logic input for W-phase high-side gate driver
High-side logic ground
High-side logic supply voltage input(Pin removed)
V-phase bootstrap capacitor connection
V-phase high-side floating supply voltage input
U-phase high-side floating supply voltage input(Pin removed)
W-phase high-side floating supply voltage input
W-phase output (connected to W2 externally)(Pin removed)
V-phase output (connected to V2 externally)(Pin removed)
Positive DC bus supply voltage (+)(Pin removed)
U-phase high-side floating supply voltage input
U-phase output(Pin removed)(Pin trimmed) V-phase low-side power MOSFET source or IGBT emitter(Pin removed)
V-phase output (connected to V1 externally)(Pin removed)
W-phase output (connected to W1 externally)(Pin removed)(Pin removed)
W-phase low-side power MOSFET source or IGBT emitter

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SIM689xM Series
9.

Typical Applications

CR filters and Zener diodes should be added to your application as needed. This is to protect each pin against surge
voltages causing malfunctions, and to avoid the IC being used under the conditions exceeding the absolute maximum
ratings where critical damage is inevitable. Then, check all the pins thoroughly under actual operating conditions toensure that your application works flawlessly.
VB2 20

CB2

V 19

VCC

HIN3
HIN2
HIN1

24 W1
High-side MIC

26 V1
28 VBB

VDC

Controller(NC) 12
power supply

LS1 11
VT 10

DVT

LIN3

CVT

VT

RVT

Controller

CB3

COM1
16
HIN3 15
HIN2 14
HIN1 13

GND

LIN2
LIN1

21 VB1A
23 VB3

VCC1 17

5V
RFO

Fault

CFO

30

LIN3 9LIN2 8LIN1 7
COM2 6
VCC2 5
FO 4
OCP 3

31 U
Low-side MIC

M

33 LS2
35 V2
37 W2

LS2 2
LS3A 1RO

VB1B CB1CS

CDC

40 LS3B

RS

CO

Figure 9-1. SIM6891MD Typical Application Using a Single Shunt Resistor
VB2 20

CBOOT2

V 19

VCC

HIN3
HIN2

Controller

HIN1

LIN3
LIN2
LIN1

5V
RFO

16
HIN3 15
HIN2 14
HIN1 13
Controller power supply (NC) 12
LS1 11
DVT
VT 10
RVT
CVT
LIN3 9LIN2 8LIN1 7
COM2 6
VCC2 5
FO 4
OCP 3
CO2

24 W1
High-side MIC

RO2

26 V1
28 VBB

30

VDC

VB1B

31 U

M

CBOOT1
Low-side MIC

LS2 2
LS3A 1

RO1

CO1

CFO

CBOOT3

COM1

GND

Fault

21 VB1A
23 VB3

VCC1 1733 LS235 V237 W2CS CDC

40 LS3B

CO3 RO3
RS1 RS2

RS3

Figure 9-2. SIM6891MD Typical Application Using Three Shunt Resistors

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SIM689xM Series
10. Physical Dimensions

1.8 ±0.3

120Gate burr

1.8 ±0.1

16.7

4 ±0.236 ±0.3

8.35 ±0.3

φ3.2±0.2

Pin 1 indicator

17.4±0.5

14.8 ±0.3

Top view

14.0 ±0.2

2140

7.4 ±0.15

2-R1.5

+0.1
-0.05

+0.4
-0.3

0.42

1.15 (max.)

7.6

8.35 ±0.3● DIP40 Package

0.52

+0.1
-0.05

1.778 ±0.25
33.782±0.3(Ends of pins)
1.7 (min.)

NOTES:- Dimensions in millimeters- Pb-free (RoHS compliant)- The leads illustrated above are for reference only, and may not be actual states of being bent.
- Maximum gate burr height is 0.3 mm.

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SIM689xM Series● Reference Through Hole Size and Layout
40

21

33.7

0.04

8.7

17.4 (typ.)φ1.1 (typ.)Center of screw hole1

20

Pin pich: 1.778
33.782

SIM689xM-DSE Rev.3.6
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Unit: mm19

SIM689xM Series
11. Marking Diagram● SIM6892M, 93M, 95M, 96M

40

21

SIM689xM

Part Number

YMDDXXXX
1

20

Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
X is the control number● SIM6891MD

40

21

SIM6891MD

Part Number

YMDDXXXX
1

20

Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
X is the control number● SIM6891MDN

40

21

SIM6891MD

Part Number

YMDDXXXN
1

20

Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
X is the control number
N is the identification symbol

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SIM689xM Series
12. Functional Descriptions

12.2.2Unless specifically noted, this section uses thefollowing definitions:

These pins are connected to bootstrap capacitors forthe high-side floating supply.
In actual applications, use either of the VB1A or
VB1B pin because they are internally connected.
Voltages across the VBx and these output pins should
be maintained within the recommended range (i.e., theLogic Supply Voltage, VBS) given in Section 0.
A bootstrap capacitor, CBx, should be connected ineach of the traces between the VB1A (VB1B) and U
pins, the VB2 and V pins, the VB3 and W1 pins.
For proper startup, turn on the low-side transistor first,
then fully charge the bootstrap capacitor, CBx.
For the capacitance of the bootstrap capacitors, CBx,choose the values that satisfy Equations (1) and (2).
Note that capacitance tolerance and DC bias
characteristics must be taken into account when you
choose appropriate values for CBx.

● All the characteristic values given in this section are
typical values.
● All the circuit diagrams listed in this section represent
the type of IC that incorporates power MOSFETs. All
the functional descriptions in this section are also
applicable to the type of IC that incorporates IGBTs.
● For pin and peripheral component descriptions, thissection employs a notation system that denotes a pin
name with the arbitrary letter “x”, depending oncontext. Thus, “the VCCx pin” is used when referring
to either or both of the VCC1 and VCC2 pins.
● The COM1 pin is always connected to the COM2 pin.

12.1 Turning On and Off the IC
The procedures listed below provide recommended
startup and shutdown sequences. To turn on the IC
properly, do not apply any voltage on the VBB, HINx,
and LINx pins until the VCCx pin voltage has reached astable state (VCC(ON) ≥ 12.5 V).
It is required to fully charge bootstrap capacitors, CBx,
at startup (see Section 12.2.2).
To turn off the IC, set the HINx and LINx pins tologic low (or “L”), and then decrease the VCCx pin
voltage.

12.2 Pin Descriptions
12.2.1

U, V, V1, V2, W1, and W2

The U, V1, V2, W1, and W2 pins are the outputs ofthe three phases, and serve as the connection terminals
to the 3-phase motor. The V pin must be connected to abootstrap capacitor of the V-phase. Do not connect the
3-phase motor to the V pin. The V1 and W1 pins must
be connected to the V2 and W2 pins on a PCB,
respectively.
The U, V (V1) and W1 pins are the grounds for the
VB1A (VB1B), VB2, and VB3 pins. The U, V, and W1
pins are connected to the negative nodes of bootstrap
capacitors, CBx. The V pin is internally connected to theV1 pin.
Since high voltages are applied to these output pins
(U, V1, V2, W1, and W2), it is required to takemeasures for insulating as follows:

VB1A, VB1B, VB2, and VB3

CBx (μF) > 800 × t L(OFF)(1)

1 μF ≤ CBx ≤ 220 μF(2)

In Equation (1), let tL(OFF) be the maximum off-time of
the low-side transistor (i.e., the non-charging time ofCBx), measured in seconds.
Even while the high-side transistor is not on, voltage
across the bootstrap capacitor keeps decreasing due topower dissipation in the IC. When the VBx pin voltage
decreases to VBS(OFF) or less, the high-side undervoltage
lockout (UVLO_VB) starts operating (see Section
12.4.2.1). Therefore, actual board checking should bedone thoroughly to validate that voltage across the VBx
pin maintains over 11.0 V (VBS > VBS(OFF)) during a lowfrequency operation such as a startup period.
As Figure 12-1 shows, a bootstrap diode, DBx, and acurrent-limiting resistor, RBx, are internally placed inseries between the VCC1 and VBx pins.
Time constant for the charging time of CBx, τ, can becomputed by Equation (3):τ = CBx × R Bx ,(3)

where CBx is the optimized capacitance of thebootstrap capacitor, and RBx is the resistance of thecurrent-limiting resistor (60 Ω ± 25%).

● Keep enough distance between the output pins andlow-voltage traces.
● Coat the output pins with insulating resin.

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SIM689xM Series
DB1

RB1

DB2

RB2

DB3
17
VCC1
5
VCC2

VB1B CBP1
30

HINx

CB1
VB2

RB3

VB3
VBB

20

0
Set

CB2

CBP2
23
CBP3
28

HO3
HO2
HO1

CB3

0

VDC

Reset
0

VCC
U

MICs

V

31
19

VBx–HSx

26
V1

16
COM1
6
COM2

W2

VBS(ON)M

037

VBS(OFF)
Stays logic high

Q

24
W1

0

Figure 12-1. Bootstrap Circuit
Figure 12-2 shows an internal level-shifting circuit. A
high-side output signal, HOx, is generated according toan input signal on the HINx pin. When an input signal
on the HINx pin transits from low to high (rising edge),a “Set” signal is generated. When the HINx input signaltransits from high to low (falling edge), a “Reset” signal
is generated. These two signals are then transmitted tothe high-side by the level-shifting circuit and are input tothe SR flip-flop circuit. Finally, the SR flip-flop circuit
feeds an output signal, Q (i.e., HOx).
Figure 12-3 is a timing diagram describing how noiseor other detrimental effects will improperly influence thelevel-shifting process. When a noise-induced rapid
voltage drop between the VBx and output pins (U, V, or
W1; hereafter “VBx–HSx”) occurs after the Set signal
generation, the next Reset signal cannot be sent to theSR flip-flop circuit. And the state of an HOx signal stays
logic high (or “H”) because the SR flip-flop does not
respond. With the HOx state being held high (i.e., thehigh-side transistor is in an on-state), the next LINx
signal turns on the low-side transistor and causes asimultaneously-on condition, which may result incritical damage to the IC. To protect the VBx pin against
such a noise effect, add a bootstrap capacitor, CBx, ineach phase. CBx must be placed near the IC and beconnected between the VBx and HSx pins with aminimal length of traces. To use an electrolytic capacitor,
add a 0.01 μF to 0.1 μF bypass capacitor, CBPx, inparallel near these pins used for the same phase.

Figure 12-3. Waveforms at VBx–HSx Voltage Drop

12.2.3

VCC1 and VCC2

These are the logic supply pins for the built-in control
MICs. The VCC1 and VCC2 pins must be externallyconnected on a PCB because they are not internallyconnected. To prevent malfunction induced by supply
ripples or other factors, put a 0.01 μF to 0.1 μF ceramic
capacitor, CP, near these pins. To prevent damage causedby surge voltages, put an 18 V to 20 V Zener diode, DZ,
between the VCCx and COMx pins.
Voltages to be applied between the VCCx and COMx
pins should be regulated within the recommended
operational range of VCC, given in Section 0.

17
VCC1
5
VCC

VCC2

CVCC

MIC

CP
DZ

16
COM1
6
COM2

Figure 12-4. VCCx Pin Peripheral Circuit
U1

VBx

S
Set
Input
logic

HINx

Q

HOx

R

Pulse
generator Reset

HSx

COM1
16

Figure 12-2. Internal Level-shifting Circuit
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SIM689xM Series
12.2.4 COM1 and COM2
These are the logic ground pins for the built-in control
MICs. The COM1 and COM2 pins should be connected
externally on a PCB because they are not internallyconnected. Varying electric potential of the logic groundcan be a cause of improper operations. Therefore,
connect the logic ground as close and short as possible
to a shunt resistor, RSx, at a single-point ground (or star
ground) which is separated from the power ground (seeFigure 12-5).
U1

VDC

Therefore, it is recommended to add an additional filter
or a pull-down resistor near the HINx or LINx pin as
needed (see Figure 12-7).
Here are filter circuit constants for reference:– RIN1x: 33 Ω to 500 Ω– RIN2x: 5 kΩ to 10 kΩ
–CINx: 100 pF to 200 pF

Care should be taken in adding RIN1x and RIN2x to thetraces. When they are connected to each other, the input
voltage of the HINx and LINx pins becomes slightly
lower than the output voltage of the microcontroller.

VBB 28

Table 12-1. Input Signals for HINx and LINx Pins

CS
CDC
16 COM1

LS1 11LS2 2

6 COM2LS3A 1OCP

Connect the
COM1 and COM2
pins on a PCB.

RS1
RS2
RS3

Create a single-point ground(a star ground) near R Sx, but
keep it separated from thepower ground.

Parameter
Input
Voltage
Input
Pulse
Width
PWM
CarrierFrequency
Dead
Time

Figure 12-5. Connections to Logic Ground12.2.5

HIN1, HIN2, and HIN3;
LIN1, LIN2, and LIN3

These are the input pins of the internal motor drivers
for each phase. The HINx pin acts as a high-side
controller; the LINx pin acts as a low-side controller.
Figure 12-6 shows an internal circuit diagram of the
HINx or LINx pin. This is a CMOS Schmitt trigger
circuit with a built-in 20 kΩ pull-down resistor, and its
input logic is active high.
Input signals applied across the HINx–COMx and the
LINx–COMx pins in each phase should be set within theranges provided in Table 12-1, below. Note that deadtime setting must be done for HINx and LINx signals
because the IC does not have a dead time generator.
The higher PWM carrier frequency rises, the more
switching loss increases. Hence, the PWM carrier
frequency must be set so that operational casetemperatures and junction temperatures have sufficientmargins against the absolute maximum ranges, specified
in Section 1.
If the signals from the microcontroller become
unstable, the IC may result in malfunctions. To avoid
such malfunctions, set the microcontroller output line
not to have high-impedance outputs.. Also, if the tracesfrom the microcontroller to the HINx or LINx pin (orboth) are too long, the traces may be interfered by noise.

High Level Signal

Low Level Signal

3 V < VIN < 5.5 V

0 V < VIN < 0.5 V≥0.5 μs≥0.5 μs≤20 kHz≥1.5 μs

U1
HINx(LINx)

5V
2 kΩ

2 kΩ

20 kΩ

COM1
(COM2)

Figure 12-6. Internal Circuit Diagram of HINx or
LINx Pin
U1
Input
signal

RIN1x
HINx/
LINx

RIN2x
Controller

CINx
SIM689xM

Figure 12-7. Filter Circuit for HINx or LINx Pin

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SIM689xM Series
12.2.6

VBB

12.2.9This is the input pin for the main supply voltage, i.e.,
the positive DC bus. All of the power MOSFET drains(IGBT collectors) of the high-side are connected to thispin. Voltages between the VBB and COMx pins should
be set within the recommended range of the main supply
voltage, VDC, given in Section 0.
To suppress surge voltages, put a 0.01 μF to 0.1 μF
bypass capacitor, CS, near the VBB pin and anelectrolytic capacitor, CDC, with a minimal length of
PCB traces to the VBB pin.

12.2.7LS1, LS2, LS3A, and LS3B

These are the source (emitter) pins of the low-side
power MOSFETs (IGBTs). For current detection, theLS1, LS2, and LS3A (LS3B) pins should be externallyconnected to shunt resistors, RSx. In actual applications,use either of the LS3A or LS3B pin because they areinternally connected.
When connecting a shunt resistor, use a resistor with
low inductance, and place it as near as possible to the IC
with a minimum length of traces to the LSx and COMx
pins. Otherwise, malfunction may occur because alonger circuit trace increases its inductance and thusincreases its susceptibility to improper operations. In
applications where long PCB traces are required, add afast recovery diode, DRSx, between the LSx and COMx
pins in order to prevent the IC from malfunctioning.

FO

The FO pin operates as the fault signal output. For
more details on this function, see Section 12.4.1. Figure12-9 illustrates an internal circuit diagram of the FO pin
and its peripheral circuit. Because of its open-collector
nature, the FO pin should be tied by a pull-up resistor,
RFO, to the external power supply. The external power
supply voltage (i.e., the FO Pin Pull-up Voltage, VFO)
should range from 3.0 V to 5.5 V. When the pull-up
resistor, RFO, has a too small resistance, the FO pin
voltage at fault signal output becomes high due to thesaturation voltage drop of a built-in transistor, QFO.
Therefore, it is recommended to use a 3.3 kΩ to 10 kΩpull-up resistor. To suppress noise, add a filter capacitor,
CFO, near the IC with minimizing a trace length between
the FO and COMx pins.
For avoiding repeated OCP activation, the external
microcontroller must shut off any input signals to the IC
within an OCP hold time, tP = 5 ms (min.), after theinternal transistor (QFO) turn-on. (For more details, see
Section 12.4.3) Our recommendation is to use a0.001 μF to 0.01 μF filter capacitor.
VFO
100 kΩ

4

INT

FO
50 Ω

CFO

QFO

U1
VBB 28

U1

5V

RFO

6

VDC

COM2

CS
DRS1

LS1 11

CDC

RS2
DRS3

LS3A 1

Add a fast recovery
diode to a long trace.

12.2.10 VT
RS3

Put a shunt resistor near the IC witha minimum length to the LSx pin.

Figure 12-8. Connections to LSx Pin

12.2.8Figure 12-9. Internal Circuit Diagram of FO Pin and
Its Peripheral Circuit

DRS2

LS2 2

16 COM1
6 COM2RS1OCP

The OCP pin serves as the input for the overcurrent
protections which monitor the currents going throughthe output transistors. For more details on theovercurrent protection (OCP), see Section 12.4.3.

This pin outputs temperature sensing voltages. The
external microcontroller can monitor the junction
temperature of the internal control stage, not of theoutput transistors, with the VT pin. Section 12.3
explains the configuration of the VT pin and its
peripheral circuit and the temperature sensing function.

12.3 Temperature Sensing Function
The microcontroller can monitor the junction
temperature of the internal control stage, throughtemperature sensing voltages that the VT pin outputs.
The IC must be set to stop its operation as it detects anabnormal heating state with temperature sensing
voltages. A typical example is turning off input signals
from the microcontroller. Figure 12-11 shows a relation
between the VT pin voltage and temperature. Table 12-2

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SIM689xM Series
and Table 12-3 provide the details of variations found in
Figure 12-11.
Temperature sensing voltages may exceed 3.0 V,
causing permanent damage to the IC in the worst case.
To protect the parts connected to the VT pin such as the
microcontroller, add a clamp diode, DVT, between the
microcontroller power supply and the VT pin (seeFigure 12-10).

VT Pin Voltage(V)
1.30 ± 0.10
3.15 ± 0.07

This section describes the various protection circuits
provided in the SIM689xM series. The protection
circuits include the undervoltage lockout for power
supplies (UVLO), the overcurrent protection (OCP), andthe thermal shutdown (TSD). In case one or more ofthese protection circuits are activated, the FO pin
outputs a fault signal; as a result, the external
microcontroller can stop the operations of the threephases by receiving the fault signal. In the following
functional descriptions, “HOx” denotes a gate input
signal on the high-side transistor, whereas “LOx”
denotes a gate input signal on the low-side transistor.
“VBx–HSx” refers to the voltages between the VBx pin
and output pins (U, V, and W1).

DVT
Controller

10

VT

CVT
6

Figure 12-10.

TJ(MIC)
(°C)
50
125

12.4 Protection Functions

Controller power supply

RVT

Table 12-3. VT Pin Voltage Variation on TJ(MIC) (Design
Value)COM2

VT Pin Peripheral Circuit

4.0
3.5

12.4.1VT Pin Voltage (V)3.0

Fault Signal Output

In case one or more of the following protections are
actuated, an internal transistor, QFO, turns on, then the
FO pin becomes logic low (≤0.5 V).

2.5
2.0

1) Low-side undervoltage lockout (UVLO_VCC)
2) Overcurrent protection (OCP)
3) Thermal shutdown (TSD)

Max.

1.5
1.0
Typ.

0.5

Min.
0.0
25

50

75

100

125

150

Junction Temperature, TJ(MIC) (°C)

Figure 12-11. VT Pin Voltage vs. Internal Control
Stage Junction Temperature, TJ(MIC) (Design Value)
Table 12-2. TJ(MIC) Variation on VT Pin Voltage (Design
Value)VT Pin Voltage
(V)
1.30
3.15

TJ(MIC)(°C)
50 ± 4125 ± 3

While the FO pin is in the low state, all the low-side
transistors turn off. In normal operation, the FO pin
outputs a high signal of about 5 V. Motor operations
must be controlled by the external microcontroller sothat it can immediately stop the motor when fault signals
are detected. To prevent the IC from having permanent
damage at OCP activation, be sure to set the motor
operation to stop within tP = 10.0 ms (typ.). tP is the fault
signal output time of the FO pin, fixed by a built-infeature of the IC itself (see Section 12.4.3). To resume
the motor operation thereafter, set the motor to beresumed after a lapse of ≥2 seconds.

12.4.2

Undervoltage Lockout for Power
Supply (UVLO)

In case the gate-driving voltages of the output
transistors decrease, their steady-state power dissipations
increase. This overheating condition may cause
permanent damage to the IC in the worst case. To
prevent this event, the SIM689xM series has theundervoltage lockout (UVLO) circuits for both of theSIM689xM-DSE Rev.3.6
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SIM689xM Series
high- and low-side power supplies.

12.4.2.1. Undervoltage Lockout for Highside Power Supply (UVLO_VB)
Figure 12-12 shows operational waveforms of theundervoltage lockout for high-side power supply (i.e.,
UVLO_VB).
When the voltage between the VBx and output pins
(VBx–HSx) decreases to the High-side Logic Operation
Stop Voltage (VBS(OFF) = 10.0 V) or less, the UVLO_VB
circuit in the corresponding phase gets activated and sets
an HOx signal to logic low. When the voltage between
the VBx and HSx pins increases to the High-side Logic
Operation Start Voltage (VBS(ON) = 10.5 V) or more, theIC releases the UVLO_VB operation. Then, the HOx
signal becomes logic high at the rising edge of the first
input command after the UVLO_VB release. Any fault
signals are not output from the FO pin during the
UVLO_VB operation. In addition, the VBx pin has aninternal UVLO_VB filter of about 3 μs, in order toprevent noise-induced malfunctions.

the corresponding phase gets activated and sets both ofHOx and LOx signals to logic low. When the VCC2 pin
voltage increases to the Low-side Logic Operation Start
Voltage (VCC(ON) = 11.5 V) or more, the IC releases the
UVLO_VCC operation. The IC then resumes
transmitting HOx and LOx signals according to input
commands on the HINx and LINx pins, respectively.
During the UVLO_VCC operation, the FO pin becomes
logic low and sends fault signals.
In addition, the VCC2 pin has an internal
UVLO_VCC filter of about 3 μs, in order to prevent
noise-induced malfunctions.
HINx
0

LINx
0

UVLO_VCC
operation

VCC2

VCC(OFF)VCC(ON)

0

HINx

HOx

0

0

LINx

About 3 µs

LOx responds to input signal.

LOx
0
UVLO_VB
operation

VBx-HSx
VBS(OFF)0

VBS(ON)FOUVLO release

0

0

HOx

About 3 µs

HOx restarts at
positive edge after
UVLO_VB release.

012.4.3LOx
0

FO

No FO output at UVLO_VB.

0

Figure 12-12.

Figure 12-13.

UVLO_VB Operational Waveforms

UVLO_VCC Operational Waveforms

Overcurrent Protection (OCP)The overcurrent protection (OCP) is a protection
against large inrush currents (i.e., high di/dt). Figure 1214 is an internal circuit diagram describing the OCP pin
and its peripheral circuit. The OCP pin detects
overcurrents with voltage across external shunt resistors,
RSx. Because the OCP pin is internally pulled down, theOCP pin voltage increases proportionally to a rise in thecurrent running through the shunt resistor, RSx.

12.4.2.2. Undervoltage Lockout for Lowside Power Supply (UVLO_VCC)
Figure 12-13 shows operational waveforms of theundervoltage lockout for low-side power supply (i.e.,
UVLO_VCC). When the VCC2 pin voltage decreases tothe Low-side Logic Operation Stop Voltage(VCC(OFF) = 11.0 V) or less, the UVLO_VCC circuit in

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SIM689xM Series
U1

VTRIP

OCP

2 kΩ

VBB
28

+

CO

0

LINx

3
100 kΩ

HINx

Blanking
filter2 µs

0Output SW turn-off
and QFO turn-on

OCP

COM2

tBK

tBK

tBK

VTRIP

6

LSx
A/D

0

RO

DRS

RSx

COM

HOx
0

LOx

Figure 12-14.

Internal Circuit Diagram of OCP Pin
and Its Peripheral Circuit0

FO restarts automatically after t P.

FO
tP

Figure 12-15 is a timing chart that represents
operation waveforms during OCP operation. When the
OCP pin voltage increases to the OCP Threshold
Voltage (VTRIP = 0.50 V) or more, and remains in thiscondition for a period of the OCP Blanking Time (seeSection 3.1) or longer, the OCP circuit is activated. The
enabled OCP circuit shuts off the low-side transistors
and puts the FO pin into a low state.
Then, output current decreases as a result of theoutput transistor turn-offs. Even if the OCP pin voltage
falls below VTRIP, the IC holds the FO pin in the low
state for a fixed OCP hold time, tP = 10.0 ms (typ.).
Then, the output transistors operate according to input
signals.
The OCP is used for detecting abnormal conditions,such as an output transistor shorted. In case short-circuit
conditions occur repeatedly, the output transistors can be
destroyed. For this reason, motor operations must be
controlled by the external microcontroller so that it can
immediately stop the motor when fault signals aredetected.

0

Figure 12-15.

OCP Operational Waveforms

For proper shunt resistor setting, your applicationmust meet the following:● Use the shunt resistor that has a recommended
resistance, RSx (see Section 0).
● Set the OCP pin input voltage to vary within the rated
OCP pin voltages, VOCP (see Section 1).
● Keep the current through the output transistors below
the rated output current (pulse), IOP (see Section 1).
It is required to use a resistor with low internal
inductance because high-frequency switching current
will flow through the shunt resistors, RSx. In addition,choose a resistor with allowable power dissipationaccording to your application.
When you connect a CR filter (i.e., a pair of a filter
resistor, Rsx, and a filter capacitor, CO) to the OCP pin,care should be taken in setting the time constants of RO
and CO. The larger the time constant, the longer the timethat the OCP pin voltage rises to VTRIP. And this may
cause permanent damage to the transistors.
Consequently, a propagation delay of the IC must be
taken into account when you determine the time
constants. For RO and CO, their time constants must be
set to ≤0.2 µs.
Note that overcurrents are undetectable when one ormore of the U, V/V1/V2, and W1/W2 pins or their traces
are shorted to ground (ground fault). In case any of thesepins falls into a state of ground fault, the output
transistors may be destroyed.

12.4.4

Thermal Shutdown (TSD)The SIM689xM series incorporates the thermal
shutdown (TSD) circuit. Figure 12-16 shows TSD

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SIM689xM Series
operational waveforms. In case of overheating (e.g.,increased power dissipation due to overload, or elevatedambient temperature at the device), the IC shuts down
the low-side output transistors.

ground traces should be as wide and short as possible sothat radiated EMI levels can be reduced.

VBB
28

HINx

VDC

0

LINx
31

U

0
TSD operation

TJ(MIC)

MIC
26

TDH

35

V1
V2

Ground traces
should be wideand short.

M

W1
24
W2
37

TDL
0

HOx
0

LOx responds to input signal.

LOx

11
2

0

1

FO

LS2
LS3A
High-frequency, high-voltage
current loops should be as
small and wide as possible.

0

Figure 12-16.

LS1

TSD Operational Waveforms

The TSD circuit in the low-side MIC monitors
temperatures (see Section 7). When the temperature of
the low-side MIC exceeds the TSD Operating
Temperature (TDH = 150 °C), the TSD circuit isactivated. When the temperature of the low-side MIC
decreases to the TSD Releasing Temperature(TDL = 120 °C) or less, the shutdown condition isreleased. The output transistors then resume operating
according to input signals. During the TSD operation,
the FO pin becomes logic low and transmits fault signals.
Note that junction temperatures of the output transistors
themselves are not monitored; therefore, do not use the
TSD function as an overtemperature prevention for the
output transistors.

13. Design Notes
13.1 PCB Pattern Layout
Figure 13-1 shows a schematic diagram of a motor
drive circuit. The circuit consists of current paths having
high frequencies and high voltages, which also bringabout negative influences on IC operation, noiseinterference, and power dissipation. Therefore, PCB
trace layouts and component placements play animportant role in circuit designing.
Current loops, which have high frequencies and highvoltages, should be as small and wide as possible, inorder to maintain a low-impedance state. In addition,

Figure 13-1. High-frequency, High-voltage Current
Paths

13.2 Considerations in Heatsink Mounting
The following are the key considerations and theguidelines for mounting a heatsink:● Be sure to use a metric screw of M2.5 and a plain
washer of 6.0 mm (φ). When tightening the screws,
use a torque screwdriver and tighten them within therange of screw torque defined in Section 4. Be sure to
avoid uneven tightening. Temporarily tighten the twoscrews first, then tighten them equally on both sides
until the specified screw torque is reached.
● When mounting a heatsink, it is recommended to use
silicone greases. If a thermally conductive sheet or anelectrically insulating sheet is used, package cracks
may be occurred due to creases at screw tightening.
Therefore, you should conduct thorough evaluations
before using these materials.
● When applying a silicone grease, make sure that there
are no foreign substances between the IC and aheatsink. Extreme care should be taken not to apply asilicone grease onto any device pins as much as
possible. The following requirements must be met for
proper grease application:- Grease thickness: 100 μm- Heatsink flatness: ±100 µm- Apply a silicone grease within the area indicated in
Figure 13-2, below.

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SIM689xM Series
Screw hole

Screw hole
28VBB

7.4

7.4

M2.5

1.25

Thermal silicone
grease application area

Heatsink
31.3

V

M2.5
High-side
MIC

1.25

Q1H

Q2H

Q3H
U
31
19 V

Unit: mm

26 V1
W1
24

COM1 16

Figure 13-2. Reference Application Area for Thermal
Silicone Grease

13.3 Considerations in IC Characteristics
Measurement
When measuring the breakdown voltage or leakage
current of the transistors incorporated in the IC, note thatthe gate and source (emitter) of each transistor shouldhave the same potential. Moreover, care should be taken
during the measurement because each transistor isconnected as follows:

35 V2
Q1L

COM2 637 W2

Low-side
MIC

LS1

11
LS2 2
LS3A 133 LS240 LS3B

Figure 13-3. Typical Measurement Circuit for Highside Transistor (Q1H) in U-phase● All the high-side drains (collectors) are internallyconnected to the VBB pin.
● In the U-phase, the high-side source (emitter) and thelow-side drain (collector) are internally connected to
the U pin. (In the V- and W-phases, the high- andlow-side transistors are unconnected inside the IC.)The gates of the high-side transistors are pulled down
to the corresponding output (U, V/V1, and W1) pins;
similarly, the gates of the low-side transistors are pulled
down to the COM2 pin. When measuring the breakdown
voltage or leakage current of the transistors, note that allof the output (U, V, and W1), LSx, and COMx pins
must be appropriately connected. Otherwise, theswitching transistors may result in permanent damage.
The following are circuit diagrams representing
typical measurement circuits for breakdown voltage:
Figure 13-3 shows the high-side transistor (Q1H) in the
U-phase; Figure 13-4 shows the low-side transistor (Q1L)
in the U-phase. And all the pins that are not represented
in these figures are open. When measuring the high-side
transistors, leave all the non-measuring pins open. Whenmeasuring the low-side transistors, connect only themeasuring LSx pin to the COMx pin and leave the otherpins open.

Q2L Q3L

28VBB

High-side
MIC

Q1H

Q2H

Q3H
U
31
19 V
26 V1
W1
24

COM1 16

V

35 V2
Q1L

COM2 6

Q2L Q3L

37 W2

Low-side
MIC

LS1

11
LS2 2
LS3A 133 LS240 LS3B

Figure 13-4. Typical Measurement Circuit for Lowside Transistor (Q1L) in U-phase

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SIM689xM Series
DT is the duty cycle, which is given by

14. Calculating Power Losses andEstimating Junction Temperatures
This section describes the procedures to calculate
power losses in switching transistors, and to estimate ajunction temperature. Note that the descriptions listed
here are applicable to the SIM689xM series, which iscontrolled by a 3-phase sine-wave PWM driving
strategy.
For quick and easy references, we offer calculation
support tools online. Please visit our website to find out
more.

DT =

1 + M × sin(φ + θ),
2

M is the modulation index (0 to 1),cosθ is the motor power factor (0 to 1),
IM is the effective motor current (A),α is the slope of the linear approximation in the
VCE(SAT) vs. IC curve, andβ is the intercept of the linear approximation in the
VCE(SAT) vs. IC curve.

● DT0050: Motor Driver ICs (with MOSFETs) Power
Loss Calculation Tool
https://www.semicon.sanken-ele.co.jp/en/calctool/mosfet_caltool_en.html

VCCx = 15 V

2.5

y = 0.19x + 0.92
2.0

VCE(SAT) (V)25 °C● DT0052: Motor Driver ICs (with IGBTs) Power Loss
Calculation Tool
https://www.semicon.sanken-ele.co.jp/en/calctool/igbtall_caltool_en.html

1.5
1.0
0.5
75 °C 125 °C
0.0

14.1 IGBT

0

Total power loss in an IGBT can be obtained bytaking the sum of steady-state loss, PON, and switching
loss, PSW. The following subsections contain themathematical procedures to calculate these losses (PONand PSW) and the junction temperature of all IGBTs
operating.

IGBT Steady-state Loss, PON

Steady-state loss in an IGBT can be computed byusing the VCE(SAT) vs. IC curves, listed in Section 15.3.1.
As expressed by the curves in Figure 14-1, a linear
approximation at a range the IC is actually used is
obtained by: VCE(SAT) = α × IC + β. The values gained by
the above calculation are then applied as parameters inEquation (4), below. Hence, the equation to obtain the
IGBT steady-state loss, PON, is:
PON =

1 π
(φ) × IC (φ) × DT × dφ
∫ V
2π 0 CE(SAT)

1 1 4= α( +
M × cos θ) IM 2
2 2 3π√2 1 π+β ( + M × cos θ) IM .
π
2 8

2

3

4

5

IC (A)

Figure 14-1. Linear Approximate Equation of
VCE(SAT) vs. IC

14.1.214.1.1

1

IGBT Switching Loss, PSW

Switching loss in an IGBT can be calculated by
Equation (5), letting IM be the effective current value ofthe motor:
PSW =

VDC
√2
× fC × αE × IM ×
.
π
300

(5)

Where:
fC is the PWM carrier frequency (Hz),VDC is the main power supply voltage (V), i.e., the
VBB pin input voltage, andαE is the slope of the switching loss curve (see Section
14.1.2).

(4)

Where:VCE(SAT) is the collector-to-emitter saturation voltage of
the IGBT (V),IC is the collector current of the IGBT (A),SIM689xM-DSE Rev.3.6
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SIM689xM Series
Estimating Junction Temperatureof IGBTThe junction temperature of all IGBTs operating, TJ,
can be estimated with Equation (6):
TJ = R (J−C)Q × {(PON + PSW ) × 6} + TC .

(6)

Where:
R(J-C)Q is the junction-to-case thermal resistance(°C/W) of all the IGBTs operating, andTC is the case temperature (°C), measured at the point
defined in Figure 3-1.

14.2 Power MOSFET
Total power loss in a power MOSFET can beobtained by taking the sum of the following losses:
steady-state loss, PRON; switching loss, PSW; the steadystate loss of a body diode, PSD. In the calculation
procedure we offer, the recovery loss of a body diode,
PRR, is considered negligibly small compared with theratios of other losses.
The following subsections contain the mathematicalprocedures to calculate these losses (PRON, PSW, and PSD)
and the junction temperature of all power MOSFETs
operating.

14.2.1

Power MOSFET Steady-state Loss,
PRON

Steady-state loss in a power MOSFET can becomputed by using the RDS(ON) vs. ID curves, listed in
Section 15.3.1. As expressed by the curves in Figure
14-2, a linear approximation at a range the ID is actuallyused is obtained by: RDS(ON) = α × ID + β. The values
gained by the above calculation are then applied asparameters in Equation (7), below. Hence, the equation
to obtain the power MOSFET steady-state loss, PRON, is:PRON =1 π∫ I (φ)2 × R DS(ON) (φ) × DT × dφ
2π 0 D= 2√2α (M is the modulation index (0 to 1),cosθ is the motor power factor (0 to 1),
IM is the effective motor current (A),α is the slope of the linear approximation in the RDS(ON)vs. ID curve, andβ is the intercept of the linear approximation in the
RDS(ON) vs. ID curve.
VCCx = 15 V

6.0

125°C

y = 0.56x + 3.7

5.0

RDS(ON) (Ω)

14.1.3

4.0

75°C

3.0
25°C
2.0
1.0
0.0
0.0

0.5

1.0

1.5

2.0

2.5

ID (A)

Figure 14-2. Linear Approximate Equation of
RDS(ON) vs. ID

14.2.2

Power MOSFET Switching Loss,
PSW

Switching loss in a power MOSFET can be calculated
by Equation (8), letting IM be the effective current valueof the motor:
PSW =

VDC
√2
× fC × αE × IM ×
.
π
300

(8)

Where:
fC is the PWM carrier frequency (Hz),VDC is the main power supply voltage (V), i.e., the
VBB pin input voltage, andαE is the slope of the switching loss curve (see Section
14.2.2).

1
3+ M × cos θ) IM 3
3π 32
(7)

1 1
+2β ( +
M × cos θ) IM 2 .
8 3π
Where:
ID is the drain current of the power MOSFET (A),RDS(ON) is the drain-to-source on-resistance of thepower MOSFET (Ω),
DT is the duty cycle, which is given byDT =1 + M × sin(φ + θ),
2

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SIM689xM Series
14.2.3

Body Diode Steady-state Loss, PSD

Steady-state loss in the body diode of a power
MOSFET can be computed by using the VSD vs. ISD
curves, listed in Section 15.3.1. As expressed by the
curves in Figure 14-3, a linear approximation at a range
the ISD is actually used is obtained by: VSD = α × ISD + β.
The values gained by the above calculation are thenapplied as parameters in Equation (9), below. Hence, theequation to obtain the body diode steady-state loss, PSD,
is:
PSD =

1 π
∫ V (φ) × ISD (φ) × (1 − DT) × dφ
2π 0 SD

14.2.4

Estimating Junction Temperatureof Power MOSFETThe junction temperature of all power MOSFETs
operating, TJ, can be estimated with Equation (10):
TJ = R J−C × {(PON + PSW + PSD ) × 6} + TC .

(10)

Where:
RJ-C is the junction-to-case thermal resistance (°C/W)
of all the power MOSFETs operating, andTC is the case temperature (°C), measured at the point
defined in Figure 3-1.

1 1 4
= α( −
M × cos θ) IM 2
2 2 3π(9)√2 1 π+β ( − M × cos θ) IM .
π
2 8Where:
VSD is the source-to-drain diode forward voltage of thepower MOSFET (V),ISD is the source-to-drain diode forward current of thepower MOSFET (A),DT is the duty cycle, which is given byDT =1 + M × sin(φ + θ),
2

M is the modulation index (0 to 1),cosθ is the motor power factor (0 to 1),
IM is the effective motor current (A),α is the slope of the linear approximation in the VSD vs.
ISD curve, andβ is the intercept of the linear approximation in the VSD
vs. ISD curve.
1.4

VSD (V)

1.2

25°C

1.0
0.8

y = 0.201x + 0.63

0.6
75°C
0.4

125°C

0.2
0.0
0.0

0.5

1.0

1.5

2.0

2.5

ISD (A)

Figure 14-3. Linear Approximate Equation of
VSD vs. ISD

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SIM689xM Series
15. Performance Curves
15.1 Performance Curves of Control Parts
Figure 15-1 to Figure 15-23 provide performance curves of the control parts integrated in the SIM689xM series,
including variety-dependent characteristics and thermal characteristics. TJ represents the junction temperature of thecontrol parts.
Table 15-1. Typical Characteristics of Control Parts
Figure Number
Figure 15-1
Figure 15-2
Figure 15-3
Figure 15-4
Figure 15-5
Figure 15-6
Figure 15-7
Figure 15-8
Figure 15-9
Figure 15-10
Figure 15-11
Figure 15-12
Figure 15-13
Figure 15-14
Figure 15-15
Figure 15-16
Figure 15-17
Figure 15-18
Figure 15-19
Figure 15-20
Figure 15-21
Figure 15-22
Figure 15-23

Figure Caption
Logic Supply Current, ICC vs. TC (INx = 0 V)
Logic Supply Current, ICC vs. TC (INx = 5 V)
VCCx Pin Voltage, VCC vs. Logic Supply Current, ICC
Logic Supply Current (1-phase) IBS vs. TC (HINx = 0 V)
Logic Supply Current (1-phase) IBS vs. TC (HINx = 5 V)
VBx Pin Voltage, VB vs. Logic Supply Current, IBS (HINx = 0 V)
Logic Operation Start Voltage, VBS(ON) vs. TC
Logic Operation Stop Voltage, VBS(OFF) vs. TC
Logic Operation Start Voltage, VCC(ON) vs. TC
Logic Operation Stop Voltage, VCC(OFF) vs. TC
UVLO_VB Filtering Time vs. TC
UVLO_VCC Filtering Time vs. TC
High Level Input Threshold Voltage, VIH vs. TC
Low Level Input Threshold Voltage, VIL vs. TC
Input Current at High Level (HINx or LINx), IIN vs. TC
High-side Turn-on Propagation Delay vs. TC (from HINx to HOx)
Low-side Turn-on Propagation Delay vs. TC (from LINx to LOx)
Minimum Transmittable Pulse Width for High-side Switching, tHIN(MIN) vs. TC
Minimum Transmittable Pulse Width for Low-side Switching, tLIN(MIN) vs. TC
OCP Threshold Voltage, VTRIP vs. TC
OCP Hold Time, tP vs. TC
OCP Blanking Time, tBK(OCP) + Propagation Delay, tD vs. TC
FO Pin Voltage in Normal Operation, VFOL vs. TC

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SIM689xM Series

VCCx = 15 V, HINx = 0 V, LINx = 0 V
3.5

ICC (mA)

2.5

Typ.

2.0

Min.

1.5

ICC (mA)

Max.

3.0

1.0
0.5
0.0
-30

0

30

60

90

120

Max.
Typ.
Min.

-30

150

0

30

60

120

150

TC (°C)

Figure 15-1. Logic Supply Current, ICC vs. TC(INx = 0 V)

Figure 15-2. Logic Supply Current, ICC vs. TC(INx = 5 V)

HINx = 0 V, LINx = 0 V

VBx = 15 V, HINx = 0 V

250

2.5

200

2.0
−30 °C

25 °C

125 °CIBS (µA)

1.5
1.0

150
Max.
Typ.
Min.

100
50

0.5
0.0

0
12

13

14

15

16

17

18

19

20

-30

0

30

60

VCC (V)

120

150

Figure 15-4. Logic Supply Current (1-phase) IBS vs. TC(HINx = 0 V)

VBx = 15 V, HINx = 5 V

250

90

TC (°C)

Figure 15-3. VCCx Pin Voltage, VCC vs. Logic
Supply Current, ICC curve

VBx = 15 V, HINx = 0 V

120
100

Max.

150

Typ.
100

Min.

IBS (µA)

200

IBS (µA)90

TC (°C)

3.0

ICC(mA)

VCCx = 15 V, HINx = 5 V, LINx = 5 V

5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

80
125 °C
60

20

0

0
0

30

60

90

120

150

−30 °C

40

50

-30

25 °C

12

13

Figure 15-5. Logic Supply Current (1-phase) IBS vs.
TC (HINx = 5 V)

14

15

16

17

18

19

20

VB (V)TC (°C)

Figure 15-6. VBx Pin Voltage, VB vs. Logic Supply
Current, IBS (HINx = 0 V)

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12.5

12.0

12.0

11.5

11.5

11.0
Max.

11.0
Typ.

10.5

Min.

10.0

VBS(OFF) (V)VBS(ON) (V)SIM689xM Series

Max.

10.5

Typ.
10.0
Min.

9.5
9.0

9.5
-30

0

30

60

90

120

-30

150

0

30

TC (°C)

Figure 15-7. Logic Operation Start Voltage, VBS(ON)vs. TC

120

150

12.0

12.0

Max.

11.5

11.5

Typ.

11.0

11.0

Min.

10.5

VCC(OFF) (V)VCC(ON) (V)90

Figure 15-8. Logic Operation Stop Voltage, VBS(OFF) vs.
TC

12.5

Max.
Typ.
Min.

10.5
10.0
9.5

10.0

9.0

9.5
-30

0

30

60

90

120

-30

150

0

30

TC (°C)

Max.
Typ.
Min.

0

30

60

90

120

150

Figure 15-10.

UVLO_VCC Filtering Time (µs)

5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-30

60

90

120

150

TC (°C)

Figure 15-9. Logic Operation Start Voltage, VCC(ON)vs. TCUVLO_VB Filtering Time (µs)

60TC (°C)

Logic Operation Stop Voltage, VCC(OFF)vs. TC

7.0
6.0

Max.

5.0
4.0

Typ.

3.0

Min.

2.0
1.0
0.0
-30

0

Figure 15-11. UVLO_VB Filtering Time vs. TC

30

60

90

120

150

TC (°C)TC (°C)

Figure 15-12.

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UVLO_VCC Filtering Time vs. TC

35

SIM689xM Series

2.6

2.0

2.4
1.8
Max.

2.0

Typ.

1.8
Min.

1.6

1.6

VIL (V)VIH (V)

2.2

Max.
Typ.

1.4

Min.
1.2

1.4
1.0

1.2
1.0

0.8
-30

0

30

60

90

120

150

-30

0

30

TC (°C)

Figure 15-14.

INHx or INLx = 5 V
Max.
Typ.
Min.

-30

0

30

60

90

120

400

150

Max.

350
300

Typ.

250
200

Min.

150
100
50
0

150

-30

0

30

60

90

120

150

TC (°C)

Input Current at High Level (HINx or
LINx), IIN vs. TC

Figure 15-16.

400

High-side Turn-on Propagation Delay vs.
TC (from HINx to HOx)

180

Max.

350

Max.

160
140

300
Typ.

250
200

Min.

150
100

tHIN(MIN) (ns)Low-side Turn-on Propagation
Delay (ns)120

Low Level Input Threshold Voltage, VIL
vs. TCTC (°C)

Figure 15-15.

90

450

High-side Turn-on Propagation
Delay (ns)IIN (µA)

Figure 15-13. High Level Input Threshold Voltage,
VIH vs. TC

450
400
350
300
250
200
150
100
50
0

60

TC (°C)

Typ.

120
100

Min.

80
60
40

50

20
0

0
-30

0

30

60

90

120

150

-30

Figure 15-17. Low-side Turn-on Propagation Delay
vs. TC (from LINx to LOx)

0

30

60

90

120

150

TC (°C)TC (°C)

Figure 15-18. Minimum Transmittable Pulse Width for
High-side Switching, tHIN(MIN) vs. TC

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SIM689xM Series

0.54

300

Max.

0.53

250
Typ.

150
Min.

100

VTRIP (V)tLIN(MIN) (ns)

0.52
200

Max.

0.51

Typ.

0.50
0.49

Min.

0.48
50

0.47
0.46

0
-30

0

30

60

90

120

-30

150

0

30

TC (°C)

Figure 15-19. Minimum Transmittable Pulse Widthfor Low-side Switching, tLIN(MIN) vs. TC

Figure 15-20.

14

120

150

OCP Threshold Voltage, VTRIP vs. TC

3.5

10

Typ.

8
Min.

6

tBK + tD (μs)

Max.

12

tP (ms)

90

4.0

16

3.0

Max.

2.5
2.0

Typ.

1.5

Min.

4

1.0

2

0.5

0

0.0
-30

0

30

60

90

120

150

-30

Figure 15-21.

0

30

60

90

120

150

TC (°C)TC (°C)VFOL (mV)60

TC (°C)OCP Hold Time, tP vs. TC

Figure 15-22. OCP Blanking Time, tBK(OCP) +Propagation Delay, tD vs. TC(SIM6891MD/92M/93M/95M/96M)

FOx pull-up voltage = 5 V, RFO = 3.3 kΩ, FOx in logic low

5.05
5.04
5.03
5.02
5.01
5.00
4.99
4.98
4.97
4.96
4.95

Max.
Typ.
Min.

-30

0

30

60

90

120

150

TC (°C)

Figure 15-23.

FO Pin Voltage in Normal Operation,
VFOL vs. TC

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SIM689xM Series
15.2 Transient Thermal Resistance Curves
The following graphs represent transient thermal resistance (the ratios of transient thermal resistance), with steadystate junction-to-case thermal resistance = 1. Note that the graph representing that of the IGBT-embedded device shows
only IGBT characteristics; no freewheeling diode characteristics are included.

Ratio of Transient Thermal
Resistance

1.00

0.10

0.01
0.001

0.01

Figure 15-24.

0.1Time (s)110Transient Thermal Resistance: SIM6891MD/ SIM6891MDN

Ratio of Transient Thermal
Resistance

1.00

0.10

0.01
0.001

0.01

Figure 15-25.

0.1Time (s)110Transient Thermal Resistance: SIM6893M

Ratio of Transient Thermal
Resistance

1.00

0.10

0.01
0.001

0.01

Figure 15-26.

0.1Time (s)110Transient Thermal Resistance: SIM6896M

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SIM689xM Series

Ratio of Transient Thermal
Resistance

1.00

0.10

0.01
0.001

0.01

0.1

1

10

Time (s)Figure 15-27.

Transient Thermal Resistance: SIM6892M/SIM6895M

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SIM689xM Series
15.3 Performance Curves of Output Parts
15.3.1

Output Transistor Performance Curves

15.3.1.1. SIM6891MD/ SIM6891MDN
VCCx = 15 V

6.0

4.0

1.2

VSD (V)

5.0

RDS(ON) (Ω)

1.4

125°C

75°C

3.0
25°C
2.0

25 °C

1.0
0.8
0.6
75 °C

0.4

1.0

125 °C

0.2
0.0

0.0
0.0

0.5

1.0

1.5

2.0

0.0

2.5

0.5

1.0

1.5

2.0

2.5

ISD (A)

ID (A)

Figure 15-28. Power MOSFET RDS(ON) vs. ID

Figure 15-29.

Power MOSFET VSD vs. ISD

15.3.1.2. SIM6893M
VCCx = 15 V

1.2

0.8

1.0

VSD (V)

1.0

RDS(ON) (Ω)

1.2

125°C
75°C

0.6

25°C

25°C

0.8
0.6
75°C

0.4

0.4

0.2

0.2

125°C

0.0

0.0
0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.0

1.0

ID (A)

Figure 15-30. Power MOSFET RDS(ON) vs. ID

2.0

3.0

4.0

5.0

ISD (A)

Figure 15-31.

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Power MOSFET VSD vs. ISD

40

SIM689xM Series
15.3.1.3. SIM6896M
VCCx = 15 V

2.0

2.0
125°C

1.8

25°C

1.6

VF (V)VCE(SAT) (V)

1.5
25°C
75°C
1.4

1.0
75°C
125°C

0.5

1.2
1.0
1.0

1.5

2.0

2.5

0.0

3.0

0.0

0.5

1.0

IC (A)

1.5

2.0

2.5

3.0

4

5

IF (A)

Figure 15-32. IGBT VCE(SAT) vs. IC

Figure 15-33.

FRD VF vs. IF

VCCx = 15 V

2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0

3.0
2.5

25 °C

VF (V)VCE(SAT) (V)

15.3.1.4. SIM6892M/SIM6895M

125 °C

2.0

25 °C

1.5
1.0

75 °C

75 °C

0.5
0

1

2

3

4

5

125 °C

0.0
01

IC (A)

Figure 15-34. IGBT VCE(SAT) vs. IC

2

3

IF (A)

Figure 15-35.

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FRD VF vs. IF

41

SIM689xM Series
15.3.2

Switching Loss Curves

Conditions: VBB pin voltage = 300 V, half-bridge circuit with inductive load.
Switching Loss, E, is the sum of turn-on loss and turn-off loss.

15.3.2.1. SIM6891MD
VBx = 15 V

400
350

350

300

300
250

TJ = 125 °C

E (µJ)E (µJ)

250

VCCx = 15 V

400

200
150
100

TJ = 125 °C

200
150
100

50

50

TJ = 25 °C

0

TJ = 25 °C

0
0.0

0.5

1.0

1.5

2.0

2.5

0.0

0.5

ID (A)

1.0

1.5

2.0

2.5

ID (A)

Figure 15-36. High-side Switching Loss

Figure 15-37.

Low-side Switching Loss

15.3.2.2. SIM6891MDN
VB = 15 V

400
350

350

300

300

TJ = 125 °C

TJ = 125 °C

250

E (µJ)250

E (µJ)VCC = 15 V

400

200
150
100

200
150
100

50

50

TJ = 25 °C

0

TJ = 25 °C

0
0.0

0.5

1.0

1.5

2.0

2.5

0.0

0.5

ID (A)

Figure 15-38. High-side Switching Loss

1.0

1.5

2.0

2.5

ID (A)

Figure 15-39.

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Low-side Switching Loss

42

SIM689xM Series
15.3.2.3. SIM6893M
VBx = 15 V

400
350

350

300

300

TJ = 125 °C

250

TJ = 125 °C

E (µJ)E (µJ)

250

VCCx = 15 V

400

200
150
100

200
150
100

50

50

TJ = 25 °C

0

TJ = 25 °C

0
0.0

1.0

2.0

3.0

4.0

5.0

0.0

1.0

2.0

ID (A)

3.0

4.0

5.0

ID (A)

Figure 15-40. High-side Switching Loss

Figure 15-41.

Low-side Switching Loss

15.3.2.4. SIM6896M
VBx = 15 V

400
350

350

300

300

TJ = 125 °C

250

TJ = 125 °C

250

200

E (µJ)E (µJ)

VCCx = 15 V

400

150
100

200
150
100

50

TJ = 25 °C

0
0.0

0.5

1.0

1.5

2.0

TJ = 25 °C

50
2.5

3.0

0
0.0

0.5

IC (A)

Figure 15-42. High-side Switching Loss

1.0

1.5

2.0

2.5

3.0

IC (A)

Figure 15-43.

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Low-side Switching Loss

43

SIM689xM Series

VBx = 15 V

500
450
400
350
300
250
200
150
100
50
0

TJ = 125 °C

E (µJ)E (µJ)

15.3.2.5. SIM6892M

TJ = 25 °C
0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VCCx = 15 V

500
450
400
350
300
250
200
150
100
50
0

TJ = 125 °C

TJ = 25 °C
0.0

0.5

1.0

1.5

IC (A)

2.0

2.5

3.0

3.5

4.0

4.5

5.0

IC (A)

Figure 15-44. High-side Switching Loss

Figure 15-45.

Low-side Switching Loss

SIM6895M
VB = 15 V

600

600

500

TJ = 125 °C

400
300
200

TJ = 25 °C

100
0.5

1.0

1.5

2.0

2.5

3.0

3.5

400
300
200

TJ = 25 °C

100

0
0.0

TJ = 125 °C

500

E (µJ)E (µJ)VCC = 15 V

700

4.0

4.5

5.0

0
0.0

0.5

1.0

1.5

IC (A)

Figure 15-46. High-side Switching Loss

2.0

2.5

3.0

3.5

4.0

4.5

5.0

IC (A)

Figure 15-47.

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Low-side Switching Loss

44

SIM689xM Series
15.4 Allowable Effective Current Curves
The following curves represent allowable effective currents in 3-phase sine-wave PWM driving with parameters suchas typical RDS(ON) or VCE(SAT), and typical switching losses.
Operating conditions: VBB pin input voltage, VDC = 300 V; VCC pin input voltage, VCC = 15 V; modulation index,
M = 0.9; motor power factor, cosθ = 0.8; junction temperature, TJ = 150 °C.

15.4.1

SIM6891MD
fC = 2 kHz

Allowable Effective Current (Arms)

2.0

1.5

1.0

0.5

0.0
25

50

75

100

125

150

TC (°C)
Figure 15-48. Allowable Effective Current (fC = 2 kHz): SIM6891MD
fC = 16 kHz

Allowable Effective Current (Arms)

2.0

1.5

1.0

0.5

0.0
25

50

75

100

125

150

TC (°C)
Figure 15-49. Allowable Effective Current (fC = 16 kHz): SIM6891MD

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SIM689xM Series
15.4.2

SIM6891MDN
fC = 2 kHz

Allowable Effective Current (Arms)

2.0

1.5

1.0

0.5

0.0
25

50

75

100

125

150

TC (°C)

Figure 15-50. Allowable Effective Current (fC = 2 kHz): SIM6891MDN
fC = 16 kHz

Allowable Effective Current (Arms)

2.0

1.5

1.0

0.5

0.0
25

50

75

100

125

150

TC (°C)

Figure 15-51. Allowable Effective Current (fC = 16 kHz): SIM6891MDN

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SIM689xM Series
15.4.3

SIM6893M
fC = 2 kHz

Allowable Effective Current (Arms)

5.0

4.0

3.0

2.0

1.0

0.0
25

50

75

100

125

150

TC (°C)
Figure 15-52. Allowable Effective Current (fC = 2 kHz): SIM6893M
fC = 16 kHz

Allowable Effective Current (Arms)

5.0

4.0

3.0

2.0

1.0

0.0
25

50

75

100

125

150

TC (°C)
Figure 15-53. Allowable Effective Current (fC = 16 kHz): SIM6893M

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SIM689xM Series
15.4.4

SIM6896M
fC = 2 kHz

Allowable Effective Current (Arms)

5.0

4.0

3.0

2.0

1.0

0.0
25

50

75

100

125

150

TC (°C)
Figure 15-54. Allowable Effective Current (fC = 2 kHz): SIM6896M
fC = 16 kHz

Allowable Effective Current (Arms)

5.0

4.0

3.0

2.0

1.0

0.0
25

50

75

100

125

150

TC (°C)
Figure 15-55. Allowable Effective Current (fC = 16 kHz): SIM6896M

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SIM689xM Series
15.4.5

SIM6892M
fC = 2 kHz

Allowable Effective Current (Arms)

5.0

4.0

3.0

2.0

1.0

0.0
25

50

75

100

125

150

TC (°C)
Figure 15-56. Allowable Effective Current (fC = 2 kHz): SIM6892M
fC = 16 kHz

Allowable Effective Current (Arms)

5.0

4.0

3.0

2.0

1.0

0.0
25

50

75

100

125

150

TC (°C)
Figure 15-57.

Allowable Effective Current (fC = 16 kHz): SIM6892M

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SIM689xM Series
15.4.6

SIM6895M
fC = 2 kHz

Allowable Effective Current (Arms)

5.0

4.0

3.0

2.0

1.0

0.0
25

50

75

100

125

150

TC (°C)
Figure 15-58. Allowable Effective Current (fC = 2 kHz): SIM6895M
fC = 16 kHz

Allowable Effective Current (Arms)

5.0

4.0

3.0

2.0

1.0

0.0
25

50

75

100

125

150

TC (°C)
Figure 15-59.

Allowable Effective Current (fC = 16 kHz): SIM6895M

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SIM689xM Series
15.5 Short Circuit SOAs (Safe Operating Areas)
This section provides the graphs illustrating the short circuit SOAs of the SIM689xM series devices whose output
transistors consist of built-in IGBTs.
Conditions: VDC ≤ 400 V, 13.5 V ≤ VCC ≤ 16.5 V, TJ = 125 °C, 1 pulse.

Collector Current, IC(Peak) (A)

100
75
50
25

Short Circuit SOA

0
0

1

2

3

4

5

4

5

Pulse Width (µs)
Figure 15-60. Short Circuit SOA: SIM6892M/SIM6895M

Collector Current, IC(Peak) (A)

40
30
20
10

Short Circuit SOA

0
0

1

2

3

Pulse Width (µs)
Figure 15-61.

Short Circuit SOA: SIM6896M

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SIM689xM Series
16. Pattern Layout Example
This section contains the schematic diagrams of a PCB pattern layout example using an SIM689xM series device.
Note that the pattern layout example only uses the parts illustrated in the circuit diagram below. For more details on
through holes, see Section 10.

(Top View)(Bottom View)
Figure 16-1. Pattern Layout Example

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SIM689xM Series

GND
VO

J2

VI

U1

1

2 3

IC1
LS3B 40
W2 37
V2 35
U 31
1 LS3A VB1B 30
2 LS2
3 OCP
4 FO
5 VCC26 COM2 VBB 28

1

C2

C12

C14

C23

J1
1
2
3

R1
R2
R3

7 LIN1
8 LIN29 LIN310 VT
11 LS112 NC
R18 13HIN1
14 HIN2

4
5
6

7
8
9

R4
R5
R6

2
C20

1

J3
3
2
1

V1 26
W1 24

U
V
W

17 VCC1

R8

C16

R9

R11

D4

R10

4

C6
C7
C8
C9
C10
C11
C13
C15

3

19 V
20 VB2

R17
D5

2

R12
D1
C1
C3
C4
C5

J4

16 COM1 VB3 23

R13
D3
R15

1

C22

15 HIN3

R7
J5

C21

C17

VB1A 21

C18
C19

D2
2

Figure 16-2. Circuit Diagram of PCB Pattern Layout Example

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SIM689xM Series
17. Typical Motor Driver Application
This section contains the information on the typical motor driver application listed in the previous section, including
a circuit diagram, specifications, and the bill of the materials used.
● Motor Driver Specifications
IC
Main Supply Voltage, VDC
Rated Output PowerSIM6892M
300 VDC (typ.)500 W● Circuit Diagram
See Figure 16-2.
● Bill of Materials
SymbolPart Type
C1
Ceramic
C2
Electrolytic
C3
Ceramic
C4
Ceramic
C5
Ceramic
C6
Ceramic
C7
Ceramic
C8
Ceramic
C9
Ceramic
C10
Ceramic
C11
Ceramic
C12
Ceramic
C13
Ceramic
C14
Ceramic
C15
Ceramic
C16
Electrolytic
C17
Ceramic
C18
Electrolytic
C19
Ceramic
C20
Film
C21
Electrolytic
C22
Ceramic
C23
Ceramic
R1
GeneralR2
GeneralRatings
0.01 μF, 50 V
100 μF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
0.1 μF, 50 V
2200 pF, 50 V
0.1 μF, 50 V
0.01 μF, 50 V
47 μF, 50 V
100 pF, 50 V
47 μF, 50 V
100 pF, 50 V
0.033 μF, 630 V
47 μF, 50 V
100 pF, 50 V
100 nF, 50 V
100 Ω, 1/8 W
100 Ω, 1/8 W

SymbolPart Type
Ratings
R3
General
100 Ω, 1/8 W
R4General
100 Ω, 1/8 W
R5General
100 Ω, 1/8 W
R6General
100 Ω, 1/8 W
R7General
3.3 kΩ, 1/8 W
R8General
100 Ω, 1/8 W
R9General
100 Ω, 1/8 W
R10General
100 Ω, 1/8 W
R11General
100 Ω, 1/8 W
R12General
100 kΩ, 1/8 W
R13*Metal plate
72 mΩ, 2 W
R15*Metal plate
72 mΩ, 2 W
R17*Metal plate
72 mΩ, 2 W
R18GeneralOpen
D1
Zener diodeVz = 7 V
D2
Zener diodeVz = 20V
D3
Zener diode1A, 50 V
D4
Zener diode1A, 50 V
D5
Zener diode1A, 50 V
J1Connector
Equiv. to MA09-1
J2
Connector
Equiv. to MA02-1
J3
Pin header
Equiv. to B2P5-VH
J4Pin header
Equiv. to B2P3-VH
J5Connector
Equiv. to MA04-1
IC1
IC
SIM6892M
U1
IC
LM7805* Refers to a part that requires adjustment based on operation performance in an actual application.

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SIM689xM Series
Important Notes● All data, illustrations, graphs, tables and any other information included in this document (the “Information”) as to Sanken’s
products listed herein (the “Sanken Products”) are current as of the date this document is issued. The Information is subject to any
change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales
representative that the contents set forth in this document reflect the latest revisions before use.
● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home
appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products,
please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them toSanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportationequipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety
devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix
your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of theSanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as:
aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result
in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan(collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages andlosses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific
Applications or in manner not in compliance with the instructions set forth herein.
● In the event of using the Sanken Products by either (i) combining other products or materials or both therewith or (ii) physically,
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● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid theoccurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility,
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Please refer to the relevant specification documents and Sanken’s official website in relation to derating.
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the falling thereof, out of Sanken’s distribution network.
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from any possible errors or omissions in connection with the Information.
● Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to therelevant specification documents in relation to particular precautions when using the Sanken Products.
● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s).

DSGN-CEZ-16003

SIM689xM-DSE Rev.3.6
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55