600 V High Voltage 3-phase Motor Drivers

SCM1200MF Series

Data Sheet

Description

Package

The SCM1200MF series are high voltage 3-phasemotor drivers in which transistors, pre-drive circuits, andbootstrap circuits (diodes and resistors) are highly
integrated.
These products can run on a 3-shunt current detection
system and optimally control the inverter systems of
medium-capacity motors that require universal input
standards.

DIP33
Pin Pitch: 1.27 mm
Mold Dimensions: 47 mm × 19 mm × 4.4 mm

Features● Each Half-bridge Circuit Consists of a Pre-drive
Circuit● In Case of Abnormal Operation, All Outputs Shut
Down via Three FO Pins Connected Together● Built-in Bootstrap Diodes with Current Limiting
Resistors (22 Ω)● CMOS-compatible Input (3.3 V or 5 V)
● Pb-free (RoHS Compliant)● Isolation Voltage: 2500 V (for 1 min),
UL-recognized Component (File No.: E118037)● Fault Signal Output at Protection Activation● Protections Include:
Undervoltage Lockout for Power Supply
High-side (UVLO_VB): Auto-restartLow-side (UVLO_VCC): Auto-restart
Overcurrent Protection (OCP): Auto-restart
Simultaneous On-state Prevention: Auto-restart
Thermal Shutdown (TSD): Auto-restart

VFO

U1

1

LS1 33FO1

2 OCP1CFO

3 LIN1LIN14 COM1MIC1U 32

5 HIN1HIN1● Power Device: IGBT + FRD (600 V)
IO

Feature

10 A

Low noise

15 A

Low noise

20 A

Low noisePart Number

SCM1261MF*
SCM1242MF
SCM1263MF*
SCM1265MF*

30 A
Low noise
SCM1256MF* Uses a shorter blanking time for OCP activation.

Applications● Refrigerator Compressor Motor● Air Conditioner Compressor Motor● Washing Machine Main Motor● Fan Motor● Pump Motor

SCM1200MF Series

RFO
INT

Selection Guide

For motor drives such as:

Typical Application
VCC

Not to scale

6 VCC1

31
7

CBOOT1

VB1

8 HS1

LS2
9

FO2

10 OCP2
11 LIN2
12 COM2
13 HIN2

LIN2

HIN2

30

V

MIC2

29

M

Controller

14 VCC2

28
15

CBOOT2VB2

16 HS21718 OCP3
19 LIN3
20 COM3
21 HIN3

LIN3

HIN3

LS3

FO3

MIC3

W

27

26

22 VCC3

VDC

VBB
25

VB3
24 HS323

CBOOT3
A/D3

RO3
RO3
RO1

A/D2
A/D1

COM

CO1 CO2

CO3
RS3 RS2 RS1

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

1

SCM1200MF Series
Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings----------------------------------------------------------------------------- 4
2. Recommended Operating Conditions ----------------------------------------------------------------- 5
3. Electrical Characteristics -------------------------------------------------------------------------------- 6
3.1. Characteristics of Control Parts------------------------------------------------------------------ 6
3.2. Bootstrap Diode Characteristics ----------------------------------------------------------------- 7
3.3. Thermal Resistance Characteristics ------------------------------------------------------------- 7
3.4. Transistor Characteristics ------------------------------------------------------------------------- 8
3.4.1. SCM1261MF ----------------------------------------------------------------------------------- 8
3.4.2. SCM1242MF ----------------------------------------------------------------------------------- 9
3.4.3. SCM1263MF ----------------------------------------------------------------------------------- 9
3.4.4. SCM1265MF --------------------------------------------------------------------------------- 10
3.4.5. SCM1256MF --------------------------------------------------------------------------------- 10
4. Mechanical Characteristics --------------------------------------------------------------------------- 11
5. Insulation Distance -------------------------------------------------------------------------------------- 11
6. Truth Table ----------------------------------------------------------------------------------------------- 12
7. Block Diagram ------------------------------------------------------------------------------------------- 13
8. Pin Configuration Definitions ------------------------------------------------------------------------- 14
9. Typical Applications ------------------------------------------------------------------------------------ 15
10. Physical Dimensions ------------------------------------------------------------------------------------ 17
10.1. Leadform 2552 ------------------------------------------------------------------------------------- 17
10.2. Leadform 2557 (Long Lead Type) ------------------------------------------------------------- 18
10.3. Reference PCB Hole Sizes ----------------------------------------------------------------------- 19
11. Marking Diagram --------------------------------------------------------------------------------------- 19
12. Functional Descriptions -------------------------------------------------------------------------------- 20
12.1. Turning On and Off the IC ---------------------------------------------------------------------- 20
12.2. Pin Descriptions ----------------------------------------------------------------------------------- 20
12.2.1. U, V, and W----------------------------------------------------------------------------------- 20
12.2.2. VBB -------------------------------------------------------------------------------------------- 20
12.2.3. VB1, VB2, and VB3 ------------------------------------------------------------------------- 20
12.2.4. HS1, HS2, and HS3 ------------------------------------------------------------------------- 21
12.2.5. VCC1, VCC2, and VCC3 ------------------------------------------------------------------ 21
12.2.6. COM1, COM2, and COM3---------------------------------------------------------------- 21
12.2.7. HIN1, HIN2, and HIN3; LIN1, LIN2, and LIN3 -------------------------------------- 22
12.2.8. LS1, LS2, and LS3 -------------------------------------------------------------------------- 22
12.2.9. OCP1, OCP2, and OCP3------------------------------------------------------------------- 23
12.2.10. FO1, FO2, and FO3 ------------------------------------------------------------------------- 23
12.3. Protection Functions ------------------------------------------------------------------------------ 24
12.3.1. Fault Signal Output ------------------------------------------------------------------------- 24
12.3.2. Shutdown Signal Input --------------------------------------------------------------------- 24
12.3.3. Undervoltage Lockout for Power Supply (UVLO) ----------------------------------- 24
12.3.4. Overcurrent Protection (OCP) ----------------------------------------------------------- 25
12.3.5. Simultaneous On-state Prevention ------------------------------------------------------- 27
12.3.6. Thermal Shutdown (TSD) ----------------------------------------------------------------- 27
13. Design Notes ---------------------------------------------------------------------------------------------- 28
13.1. PCB Pattern Layout ------------------------------------------------------------------------------ 28
13.2. Considerations in Heatsink Mounting -------------------------------------------------------- 28

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 20152

SCM1200MF Series
13.3. Considerations in IC Characteristics Measurement --------------------------------------- 28
14. Calculating Power Losses and Estimating Junction Temperature ---------------------------- 29
14.1. IGBT Steady-state Loss, PON -------------------------------------------------------------------- 29
14.2. IGBT Switching Loss, PSW ----------------------------------------------------------------------- 30
14.3. Estimating Junction Temperature of IGBT -------------------------------------------------- 30
15. Performance Curves ------------------------------------------------------------------------------------ 31
15.1. Transient Thermal Resistance Curves -------------------------------------------------------- 31
15.1.1. SCM1261MF --------------------------------------------------------------------------------- 31
15.1.2. SCM1242MF, SCM1263MF -------------------------------------------------------------- 31
15.1.3. SCM1265MF --------------------------------------------------------------------------------- 32
15.1.4. SCM1256MF --------------------------------------------------------------------------------- 32
15.2. Performance Curves of Control Parts--------------------------------------------------------- 33
15.3. Performance Curves of Output Parts --------------------------------------------------------- 39
15.3.1. Output Transistor Performance Curves ------------------------------------------------ 39
15.3.2. Switching Loss Curves --------------------------------------------------------------------- 41
15.4. Allowable Effective Current Curves ----------------------------------------------------------- 46
15.4.1. SCM1261MF --------------------------------------------------------------------------------- 46
15.4.2. SCM1242MF, SCM1263MF -------------------------------------------------------------- 47
15.4.3. SCM1265MF --------------------------------------------------------------------------------- 48
15.4.4. SCM1256MF --------------------------------------------------------------------------------- 49
15.5. Short Circuit SOAs (Safe Operating Areas) ------------------------------------------------- 50
15.5.1. SCM1261MF --------------------------------------------------------------------------------- 50
15.5.2. SCM1242MF, SCM1263MF -------------------------------------------------------------- 50
15.5.3. SCM1265MF --------------------------------------------------------------------------------- 51
15.5.4. SCM1256MF --------------------------------------------------------------------------------- 51
16. Pattern Layout Example ------------------------------------------------------------------------------- 52
17. Typical Motor Driver Application ------------------------------------------------------------------- 54
Important Notes ---------------------------------------------------------------------------------------------- 55

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

3

SCM1200MF Series
1.

Absolute Maximum Ratings

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25°C.
Parameter
SymbolConditions
Rating
Unit
Remarks
Main Supply Voltage
VBB–LSx
VDC
450
V
(DC)
Main Supply Voltage
VDC(SURGE) VBB–LSx
500
V(Surge)IGBT Breakdown
VCC = 15 V, IC = 1 mA,
VCES
600
V
VIN = 0 V
Voltage
VCCx–COMx
VCC
20
Logic Supply Voltage
V
VBx–HSx
VBS
20
SCM1261MF
10
SCM1242MF/63MF
15
TC = 25 °C, TJ < 150 °C
Output Current(1)IO
A
SCM1265MF
20
SCM1256MF
30
SCM1261MF
20
Output Current (Pulse)

IOP

TC = 25 °C, PW ≤ 1 ms,
single pulse

30

A

45
HINx–COMx,
LINx–COMx
FOx–COMx−0.5 to 7

V−0.5 to 7−10 to 5

V
V

TC(OP)−30 to 100

°C

TJ
TSTG

150
−40 to 150

°C
°C

2500

V

Input Voltage

VIN

FO Pin Voltage
OCP Pin Voltage
Operating Case
Temperature(2)Junction Temperature(3)Storage Temperature

VFO
VOCP

Isolation Voltage(4)VISO(RMS)

OCPx–COMx

Between surface ofheatsink side and eachpin; AC, 60 Hz, 1 min

SCM1242MF/63MF/
65MF
SCM1256MF(1)

Should be derated depending on an actual case temperature. See Section 15.4.
Refers to a case temperature measured during IC operation.
(3)
Refers to the junction temperature of each chip built in the IC, including the control MICs, transistors, andfreewheeling diodes.
(4)
Refers to voltage conditions to be applied between all of the pins and the case. All the pins have to be shorted.
(2)

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

4

SCM1200MF Series
2.

Recommended Operating Conditions
Parameter

Main Supply Voltage
Logic Supply Voltage
Input Voltage(HINx, LINx, FOx)

Minimum Input Pulse
Width
Dead Time of Input
SignalFO Pin Pull-up Resistor
FO Pin Pull-up Voltage
FO Pin Noise Filter
Capacitor
Bootstrap Capacitor

Shunt Resistor

RC Filter Resistor
RC Filter Capacitor
PWM Carrier Frequency
Operating Case
Temperature

SymbolConditions

Min.

Typ.

Max.

Unit

VDC

COM1 = COM2 = COM3;VBB–COM

—

300

400

V

VCC

VCCx–COMx

13.5

—

16.5

V

VBS

VBx–HSx

13.5

—

16.5

V

VIN

0

—

5.5

V

tIN(MIN)ON

0.5

—

—

μs

tIN(MIN)OFF

0.5

—

—

μs

tDEAD

1.5

—

—

μs

RFO

1

—

22

kΩ

VFO

3.0

—

5.5

V

CFO

0.001

—

0.01

μF
μF

10

—

220

IP ≤ 45 A

12

—

—

IP ≤ 30 A

18

—

—

IP ≤ 20 A

27

—

—

—

—

100

1000

—

2200

1000

—

10000

fC

—

—

20

kHz

TC(OP)

—

—

100

°C

CBOOT

RS

RO
CO

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015mΩ

Remarks

SCM1256MF
SCM1242MF/
63MF/65MF
SCM1261MF

ΩpF

SCM1242MF
SCM1256MF
SCM1260MF

5SCM1200MF Series
3.

Electrical Characteristics

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); current coming
out of the IC (sourcing) is negative current (−).
Unless specifically noted, TA = 25 °C, VCC = 15 V.

3.1.

Characteristics of Control Parts
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

Remarks

Power Supply Operation
Logic Operation Start Voltage
Logic Operation Stop Voltage

VCC(ON)

VCCx–COMx

10.5

11.5

12.5

V

VBS(ON)VBx–HSx

10.5

11.5

12.5

V

VCC(OFF)

VCCx–COMx

10.0

11.0

12.0

V

VBS(OFF)VBx–HSxVCC1 = VCC2 = VCC3,
COM1 = COM2 = COM3;
VCC pin current in 3-phase
operation
VBx–HSx = 15 V,
HINx = 5 V; VBx pin
current in 1-phase operation

10.0

11.0

12.0

V

—

3

—

mA

—

140

—

μA

VIH

1.5

2.0

2.5

V

VIL

1.0

1.5

2.0

V

ICC
Logic Supply Current
IBS
Input Signal
High Level Input Threshold
Voltage (HINx, LINx, FOx)
Low Level Input Threshold
Voltage (HINx, LINx, FOx)
High Level Input Current

IIH

VIN = 5 V

—

230

500

μA

IIL

VIN = 0 V

—

—

2

μA

VFOL

VFO = 5 V, RFO = 10 kΩ

—

—

0.5

V

VFOH

VFO = 5 V, RFO = 10 kΩ

4.8

—

—

V

VTRIP

0.46

0.50

0.54

V

OCP Hold Time

tP

20

26

—

μs

OCP Blanking Time

tBK

—

1.65

—

—

0.54

—

(HINx, LINx)

Low Level Input Current(HINx, LINx)

Fault Signal Output
FO Pin Voltage at Fault Signal
OutputFO Pin Voltage in Normal
Operation
Protection
OCP Threshold Voltage

VTRIP = 1 V

μs

SCM1242MF
SCM1256MF
SCM1260MF

TSD Operating Temperature*

TDH

135

150

—

°C

TSD Releasing Temperature*

TDL

105

120

—

°C

* Refers to the junction temperature of the built-in control MICs.

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

6

SCM1200MF Series
3.2.

Bootstrap Diode Characteristics
Parameter

SymbolBootstrap Diode Leakage Current
Bootstrap Diode Forward
Voltage
Bootstrap Diode Series Resistor

ILBD
VFB

3.3.

Conditions

Min.

Typ.

Max.

Unit

VR = 600 V

—

—

10

μA

IFB = 0.15 A

—

1.1

1.3

V

17.6

22.0

26.4

Ω

Min.

Typ.

Max.

Unit

—

—

3.7

RBOOT

Remarks

Thermal Resistance Characteristics
Parameter

SymbolConditions

R(J-C)Q(2)1 element operating(IGBT)

R(J-C)F(3)1 element operating(freewheeling diode)

Junction-to-Case
Thermal Resistance(1)

—

—

3

—

—

4.5

—

—

4

Remarks
SCM1261MF°C/W

SCM12/42MF/
63MF/65MF/56MF
SCM1261MF°C/W

SCM12/42MF/
63MF/65MF/56MF(1)

Refers to a case temperature at the measurement point described in Figure 3-1, below.
Refers to steady-state thermal resistance between the junction of the built-in transistors and the case. For transient
thermal characteristics, see Section 15.1.
(3)
Refers to steady-state thermal resistance between the junction of the built-in freewheeling diodes and the case.
(2)

24

1

25

33
Measurement point

Figure 3-1.

Case Temperature Measurement PointSCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

7

SCM1200MF Series
3.4.

Transistor Characteristics

Figure 3-2 provides the definitions of switching characteristics described in this and the following sections.
HINx/
LINx
0

trr

ton

td(off) tf

td(on) tr

IC

toff

90%

0

10%

VCE

0

Figure 3-2.

Switching Characteristics Definitions

3.4.1. SCM1261MF
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage

ICES

VCE = 600 V, VIN = 0 V

—

—

1

mA

VCE(SAT)IC = 10 A, VIN = 5 V

—

1.7

2.2

V

VF

IF = 10 A, VIN = 0 V

—

1.7

2.2

V

—

85

—

ns

—

700

—

ns

—

100

—

ns

—

1070

—

ns

High-side Switching
Diode Reverse Recovery Timetrr

Turn-on Delay Timetd(on)

Rise Timetr

Turn-off Delay Timetd(off)Fall Time

tf

—

90

—

ns

Diode Reverse Recovery Time

trr

—

105

—

ns

Turn-on Delay Timetd(on)

—

710

—

ns

Rise Time

tr

—

120

—

ns

Turn-off Delay Timetd(off)

—

1010

—

ns

Fall Time

tf

—

95

—

ns

VDC = 300 V, IC = 10 A,
inductive load,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C

Low-side Switching

VDC = 300 V, IC = 10 A,
inductive load,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 20158

SCM1200MF Series
3.4.2. SCM1242MF
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage

ICES

VCE = 600 V, VIN = 0 V

—

—

1

mA

VCE(SAT)IC = 15 A, VIN = 5 V

—

1.7

2.2

V

VF

IF = 15 A, VIN = 0 V

—

1.75

2.2

V

—

80

—

ns

—

700

—

ns

—

100

—

ns

—

1300

—

ns

High-side Switching
Diode Reverse Recovery Timetrr

Turn-on Delay Timetd(on)

Rise Timetr

Turn-off Delay Timetd(off)Fall Time

tf

—

90

—

ns

Diode Reverse Recovery Time

trr

—

90

—

ns

Turn-on Delay Timetd(on)

—

700

—

ns

Rise Time

tr

—

130

—

ns

Turn-off Delay Timetd(off)

—

1230

—

ns

Fall Time

tf

—

90

—

ns

VDC = 300 V, IC = 15 A,
inductive load,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C

Low-side Switching

VDC = 300 V, IC = 15 A,
inductive load,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C

3.4.3. SCM1263MF
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage

ICES

VCE = 600 V, VIN = 0 V

—

—

1

mA

VCE(SAT)IC = 15 A, VIN = 5 V

—

1.7

2.2

V

VF

IF = 15 A, VIN = 0 V

—

1.75

2.2

V

—

80

—

ns

—

700

—

ns

—

100

—

ns

—

1300

—

ns

High-side Switching
Diode Reverse Recovery Timetrr

Turn-on Delay Timetd(on)

Rise Timetr

Turn-off Delay Timetd(off)Fall Time

tf

—

90

—

ns

Diode Reverse Recovery Time

trr

—

90

—

ns

Turn-on Delay Timetd(on)

—

700

—

ns

Rise Time

tr

—

130

—

ns

Turn-off Delay Timetd(off)

—

1230

—

ns

Fall Time

tf

—

90

—

ns

VDC = 300 V, IC = 15 A,
inductive load,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C

Low-side Switching

VDC = 300 V, IC = 15 A,
inductive load,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

9

SCM1200MF Series
3.4.4. SCM1265MF
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage

ICES

VCE = 600 V, VIN = 0 V

—

—

1

mA

VCE(SAT)IC = 20 A, VIN = 5 V

—

1.7

2.2

V

VF

IF = 20 A, VIN = 0 V

—

1.9

2.4

V

—

80

—

ns

—

780

—

ns

—

120

—

ns

—

1150

—

ns

High-side Switching
Diode Reverse Recovery Timetrr

Turn-on Delay Timetd(on)

Rise Timetr

Turn-off Delay Timetd(off)Fall Time

tf

—

90

—

ns

Diode Reverse Recovery Time

trr

—

85

—

ns

Turn-on Delay Timetd(on)

—

810

—

ns

Rise Time

tr

—

170

—

ns

Turn-off Delay Timetd(off)

—

1100

—

ns

Fall Time

tf

—

90

—

ns

VDC = 300 V, IC = 20 A,
inductive load,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C

Low-side Switching

VDC = 300 V, IC = 20 A,
inductive load,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C

3.4.5. SCM1256MF
Parameter

SymbolConditions

Min.

Typ.

Max.

Unit

Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation
Voltage
Diode Forward Voltage

ICES

VCE = 600 V, VIN = 0 V

—

—

1

mA

VCE(SAT)IC = 30 A, VIN = 5 V

—

1.7

2.2

V

VF

IF = 30 A, VIN = 0 V

—

1.9

2.4

V

—

70

—

ns

—

760

—

ns

—

130

—

ns

—

1260

—

ns

High-side Switching
Diode Reverse Recovery Timetrr

Turn-on Delay Timetd(on)

Rise Timetr

Turn-off Delay Timetd(off)Fall Time

tf

—

90

—

ns

Diode Reverse Recovery Time

trr

—

80

—

ns

Turn-on Delay Timetd(on)

—

770

—

ns

Rise Time

tr

—

160

—

ns

Turn-off Delay Timetd(off)

—

1200

—

ns

Fall Time

tf

—

90

—

ns

VDC = 300 V, IC = 30 A,
inductive load,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C

Low-side Switching

VDC = 300 V, IC = 30 A,
inductive load,
VIN = 0→5 V or 5→0 V,
TJ = 25 °C

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201510

SCM1200MF Series
4.

Mechanical Characteristics

Parameter
Conditions
Min.
Typ.
Max.
Unit
Remarks
Heatsink Mounting
*
0.588
—
0.784
N∙m
Screw Torque
Flatness of Heatsink
See Figure 4-1.
0
—
200
μm
Attachment Area
Package Weight
—
11.8
—
g
* When mounting a heatsink, it is recommended to use a metric screw of M3 and a plain washer of 7 mm (φ) together at
each end of it. For more details about screw tightening, see Section 13.2.

Heatsink
Measurement position-++

Heatsink

Figure 4-1.

5.

Flatness Measurement Position

Insulation DistanceParameter

Clearance

Conditions
Between heatsink* andleads. See Figure 5-1.

Min.

Typ.

Max.

Unit

2.0

—

2.5

mm

Remarks

Creepage
3.86
—
4.26
mm
* Refers to when a heatsink to be mounted is flat. If your application requires a clearance exceeding the maximum
distance given above, use an alternative (e.g., a convex heatsink) that will meet the target requirement.

Creepage
Clearance
Heatsink

Figure 5-1.

Insulation Distance Definitions

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SCM1200MF Series
6.

Truth Table

Table 6-1 is a truth table that provides the logic level definitions of operation modes.
In the case where HINx and LINx signals in each phase are high at the same time, the simultaneous on-stateprevention sets both the high- and low-side transistors off.
After the IC recovers from a UVLO_VCC condition, the high- and low-side transistors resume switching, according
to the input logic levels of the HINx and LINx signals (level-triggered).
After the IC recovers from a UVLO_VB condition, the high-side transistors resume switching at the next rising edgeof an HINx signal (edge-triggered).
Table 6-1. Truth Table for Operation Modes
Mode

Normal Operation

External Shutdown Signal Input
FO = L

Undervoltage Lockout for
High-side Power Supply(UVLO_VB)

Undervoltage Lockout for
Low-side Power Supply(UVLO_VCC)

Overcurrent Protection (OCP)

Thermal Shutdown (TSD)

HINx

LINx

High-side Transistor

Low-side Transistor

L

L

OFF

OFF

H

L

ON

OFF

L

H

OFF

ON

H

H

OFF

OFF

L

L

OFF

OFF

H

L

OFF

OFF

L

H

OFF

OFF

H

H

OFF

OFF

L

L

OFF

OFF

H

L

OFF

OFF

L

H

OFF

ON

H

H

OFF

OFF

L

L

OFF

OFF

H

L

OFF

OFF

L

H

OFF

OFF

H

H

OFF

OFF

L

L

OFF

OFF

H

L

OFF

OFF

L

H

OFF

OFF

H

H

OFF

OFF

L

L

OFF

OFF

H

L

OFF

OFF

L

H

OFF

OFF

H

H

OFF

OFF

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SCM1200MF Series
7.

Block Diagram

MIC1
1

UVLO_VCC

FO1

2 OCP1

3 LIN1
4 COM1
5 HIN1

6 VCC1LS1 33

UVLO_VB

Level shift

Drive
circuit

HO1

Input logic
Simultaneous
on-stateprevention

U 32

TSD
Drive
circuit

OCP

LO1

31

VB1
8 HS1
7

MIC2
9
10

UVLO_VCC

FO2
OCP2

11 LIN2

12 COM2
13 HIN2
14 VCC2LS2UVLO_VB

Level shift

Drive
circuit

HO2

Input logic
Simultaneous
on-stateprevention

30

V
29

TSD
Drive
circuit

OCP

LO2

28

VB2
16 HS215MIC317UVLO_VCC

FO3

18 OCP3

19 LIN3
20 COM3
21 HIN3

22 VCC3LS3UVLO_VB

Level shift

Drive
circuit

HO3

Input logic
Simultaneous
on-stateprevention

W
TSD

OCP

Drive
circuit

27

26

LO3

VBB
25

VB3
24 HS323

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SCM1200MF Series
8.

Pin Configuration Definitions
Top view

1

24

1

25

33

33
24
25

Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33

Pin Name
FO1
OCP1
LIN1
COM1
HIN1
VCC1
VB1
HS1
FO2
OCP2
LIN2
COM2
HIN2
VCC2
VB2
HS2
FO3
OCP3
LIN3
COM3
HIN3
VCC3
VB3
HS3
VBB
W
LS3
VBB
V
LS2
VBB
U
LS1

Description
U-phase fault signal output and shutdown signal input
Input for U-phase overcurrent protection
Logic input for U-phase low-side gate driver
U-phase logic ground
Logic input for U-phase high-side gate driver
U-phase logic supply voltage input
U-phase high-side floating supply voltage input
U-phase high-side floating supply groundV-phase fault signal output and shutdown signal input
Input for V-phase overcurrent protection
Logic input for V-phase low-side gate driver
V-phase logic ground
Logic input for V-phase high-side gate driver
V-phase logic supply voltage input
V-phase high-side floating supply voltage input
V-phase high-side floating supply groundW-phase fault signal output and shutdown signal input
Input for W-phase overcurrent protection
Logic input for W-phase low-side gate driver
W-phase logic ground
Logic input for W-phase high-side gate driver
W-phase logic supply voltage input
W-phase high-side floating supply voltage input
W-phase high-side floating supply ground
Positive DC bus supply voltage
W-phase output
W-phase IGBT emitter(Pin trimmed) positive DC bus supply voltage
V-phase output
V-phase IGBT emitter(Pin trimmed) positive DC bus supply voltage
U-phase output
U-phase IGBT emitter

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SCM1200MF Series
9.

Typical Applications

CR filters and Zener diodes should be added to your application as needed. This is to protect each pin against surge
voltages causing malfunctions, and to avoid the IC being used under the conditions exceeding the absolute maximum
ratings where critical damage is inevitable. Then, check all the pins thoroughly under actual operating conditions toensure that your application works flawlessly.
VCC

VFO

SCM1200MF Series

U1

RFO
INT

LS1
1

CFO

33

FO1

2 OCP1
3 LIN1LIN14 COM1

CLIN1

MIC1

U 32

5 HIN1HIN1

6 VCC1

CHIN1

DZ
CVCC1

VB1
8 HS1
7

CBOOT131

DBOOT1 RBOOT1

CP1

LS2
9

30

FO2

10 OCP2
11 LIN2LIN212 COM2

CLIN2

V

MIC2

29

M

13 HIN2

HIN2

Controller

14 VCC2

CHIN2
CVCC2

VB2
16 HS2
15

CBOOT228

DBOOT2 RBOOT2

LS3

CP2
17

27

FO3

18 OCP3
19 LIN3LIN320 COM3

CLIN3

MIC3

W

26

21 HIN3HIN3

22 VCC3

CHIN3
CVCC3

25

VB3
24 HS323

CBOOT3VDC

VBB
DBOOT3 RBOOT3

CP3
RO3

A/D3

A/D2
A/D1

CS

RO2

CDC

RO1
CO1

CO2

CO3

COM

DRS3 DRS2

Figure 9-1.

DRS1

RS3 RS2 RS1

Typical Application Using Three Shunt Resistors

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SCM1200MF Series

VCC

VFO

SCM1200MF Series

U1

RFO
INT

LS1
1

CFO

33

FO1

2 OCP1
3 LIN1LIN14 COM1

CLIN1

MIC1

U 32

5 HIN1HIN1

6 VCC1

CHIN1

DZ
CVCC1

VB1
8 HS1
7

CBOOT131

DBOOT1 RBOOT1

CP1

LS2
9

30

FO2

10 OCP2
11 LIN2LIN212 COM2

CLIN2

V

MIC2

29

M

13 HIN2

HIN2

Controller

14 VCC2

CHIN2
CVCC2

VB2
16 HS2
15

CBOOT2

LS3

CP2
17

28

DBOOT2 RBOOT2

27

FO3

18 OCP3
19 LIN3LIN320 COM3

CLIN3

MIC3

W

26

21 HIN3HIN3

22 VCC3

CHIN3
CVCC3

25

VB3
24 HS323

CBOOT3VDC

VBB
DBOOT3 RBOOT3

CP3
CS

RO

A/D

CDC

CO
COM

DRS

Figure 9-2.

RS

Typical Application Using a Single Shunt Resistor

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SCM1200MF Series
10. Physical Dimensions
10.1. Leadform 2552
0.5

C

0.5

C

(2.6)

8xP5.1=40.8

4.4± 0.3
1.2± 0.2+0.5

47±0.3

2 0

A

MAX1.2（Root of pin）(5ﾟ)

φ3.2± 0.15

15.95± 0.5

11.45±0.5

19±0.312.25± 0.5

17.25± 0.5

A

(5ﾟ)

B
43.3± 0.3B

2.08±0.2

11.2± 0.5
5xP1.27=6.35

3.7

1.27
3.7
D
D

+0.2

3.7

3.24

(2.6)

1.27

1.27

0.5 -0.1

2.57

5xP1.27=6.35

2

+0.2
-0.1

+0.2

0.5 -0.1+0.2

0.5 -0.1(11.6)

0.6 -0.1

B-B

C-C(38.6)+0.2+0.2
0.5 -0.1

5xP1.27=6.35+0.2

0.7 -0.1

A-A

1.2

+0.2
-0.1

D-D

Unit: mm

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SCM1200MF Series
10.2. Leadform 2557 (Long Lead Type)(0.65)

0.6

(2.6)

C

0.6

C

8xP5.1=40.8

4.4±0.3
1.2± 0.2

+0.2

A

2 0
（ Root of pin）

A

)
( 11°

0 to 0.5

Φ 3.2±0.15

15.95± 0.6

11.45±0.6

19± 0.3

12.25±0.617.25± 0.6

MAX1.247±0.3B
2.08±0.2

5xP1.27=6.35

5xP1.27=6.35
2.57

1.27

3.7

1.27
3.7

3.24

0 to 0.543.3± 0.3
5xP1.27=6.35

(12°)

B

14 to 14.8

1.27
3.7
D

+0.2

D

0.5 -0.1

(2.6)

+0.2

0.5 -0.1

+0.2

2

+0.2
-0.1

B-B

+0.2

+0.2

0.5 -0.1(11.5)+0.2

0.7 -0.1

A-A

0.5 -0.1

C-C(38.5)

0.6 -0.1

1.2

+0.2
-0.1

D-D

Unit: mm

SCM1200MF-DSE Rev.2.4
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SCM1200MF Series
10.3. Reference PCB Hole Sizes

φ1.1

φ1.4

Pins 1 to 24

Pins 25 to 33

11. Marking Diagram25

33

Branding Area
24
1

25

33

JAPAN

24

SCM12xxMF

Control Number

YMDD

1

Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
Part Number

SCM1200MF-DSE Rev.2.4
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19

SCM1200MF Series
12. Functional Descriptions
All the characteristic values given in this section are
typical values, unless they are specified as minimum or
maximum.
For pin descriptions, this section employs a notation
system that denotes a pin name with the arbitrary letter“x”, depending on context. The U-, V-, and W-phases
are represented as the pin numbers 1, 2, and 3,
respectively. Thus, “the VBx pin” is used when referring
to any or all of the VB1, VB2, or VB3 pin. Also, whendifferent pin names are mentioned as a pair (e.g., “theVBx and HSx pins”), they are meant to be the pins in thesame phase.

12.1. Turning On and Off the IC
The procedures listed below provide recommended
startup and shutdown sequences.
To turn on the IC properly, do not apply any voltage
on the VBB, HINx, and LINx pins until the VCCx pin
voltage has reached a stable state (VCC(ON) ≥ 12.5 V). It
is required to fully charge bootstrap capacitors, CBOOTx,
at startup (see Section 12.2.2).
To turn off the IC, set the HINx and LINx pins tologic low (or “L”), and then decrease the VCCx pin
voltage.

12.2. Pin Descriptions
12.2.1. U, V, and W
These pins are the outputs of the three phases, andserve as the connection terminals to the 3-phase motor.
The U, V, and W pins are internally connected to theHS1, HS2, and HS3 pins, respectively.

12.2.2. VBB
This is the input pin for the main supply voltage, i.e.,
the positive DC bus. All of the IGBT collectors of thehigh-side are connected to this pin.
Voltages between the VBB and COMx pins should be
set within the recommended range of the main supply
voltage, VDC, given in Section 2.
To suppress surge voltages, put a 0.01 μF to 0.1 μF
bypass capacitor, CS, near the VBB pin and anelectrolytic capacitor, CDC, with a minimal length of
PCB traces to the VBB pin.

12.2.3. VB1, VB2, and VB3
These are the inputs of the high-side floating power
supplies for the individual phases.

Voltages across the VBx and HSx pins should bemaintained within the recommended range (i.e., theLogic Supply Voltage, VBS) given in Section 2.
In each phase, a bootstrap capacitor, CBOOTx, should
be connected between the VBx and HSx pins.
For proper startup, turn on the low-side transistor first,
then fully charge the bootstrap capacitor, CBOOTx.
For capacitance of the bootstrap capacitors, CBOOTx,
choose the values that satisfy Equations (1) and (2).
Note that capacitance tolerance and DC bias
characteristics must be taken into account when you
choose appropriate values for CBOOTx.
CBOOTx (μF) > 800 × t L(OFF) (s)(1)

10 μF ≤ CBOOTx ≤ 220 μF(2)

In Equation (1), let tL(OFF) be the maximum off-time of
the low-side transistor (i.e., the non-charging time of
CBOOTx), measured in seconds.
Even while the high-side transistor is off, voltage
across the bootstrap capacitor keeps decreasing due topower dissipation in the IC. When the VBx pin voltage
decreases to VBS(OFF) or less, the high-side undervoltage
lockout (UVLO_VB) starts operating (see Section
12.3.3.1). Therefore, actual board checking should bedone thoroughly to validate that voltage across the VBx
pin maintains over 12.0 V (VBS > VBS(OFF)) during a
low-frequency operation such as a startup period.
As Figure 12-1 shows, a bootstrap diode, DBOOTx, anda current-limiting resistor, RBOOTx, are internally placed
in series between the VCCx and VBx pins.
Time constant for the charging time of CBOOTx, τ, canbe computed by Equation (3):τ = CBOOTx × R BOOTx ,(3)

where CBOOTx is the optimized capacitance of thebootstrap capacitor, and RBOOTx is the resistance of thecurrent-limiting resistor (22 Ω ± 20%).
U1

VB1

7

CP

HS1

DBOOT1 RBOOT1

CBOOT1

8

31

VCC

VBB
HO

6

VCC1
4

MIC1

U
COM1

32

Motor

LO

CDC VDC
LS1

Figure 12-1.

33

RS1

Bootstrap Circuit

Figure 12-2 shows an internal level-shifting circuit. A

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SCM1200MF Series
high-side output signal, HOx, is generated accroding toan input signal, on the HINx pin. When an input signal
on the HINx pin transits from low to high (rising edge),a “Set” signal is generated. When the HINx input
singnal transits from high to low (falling edge), a “Reset”
signal is generated. These two signals are thentransmitted to the high-side by the level-shifting circuit
and are input to the SR flip-flop circuit. Finally, the SR
flip-flop circuit feeds an output signal, Q (i.e., HOx).
Figure 12-3 is a timing diagram describing how noiseor other detrimental effects will improperly influence thelevel-shifting process. When a noise-induced rapid
voltage drop between the VBx and HSx pins(“VBx–HSx”) occurs after the Set signal generation, thenext Reset signal cannot be sent to the SR flip-flop
circuit. And the state of an HOx signal stays logic high(or “H”) because the SR flip-flop does not respond. With
the HOx state being held high (i.e., the high-side
transistor is in an on-state), the next LINx signal turnsonthe low-side
transistor
and causesasimultaneously-on condition which may result in criticaldamage to the IC. To protect the VBx pin against such anoise effect, add a bootstrap capacitor, CBOOTx, in eachphase. CBOOTx must be placed near the IC and beconnected between the VBx and HSx pins with aminimal length of traces. To use an electrolytic capacitor,
add a 0.01 µF to 0.1 µF bypass capacitor, CPx, in parallel
near these pins used for the same phase.
U1

VBx

S

Input
logic

HINx

Set
Pulse
generator Reset

Q

HOx

R
HSx

COMx

Figure 12-2.

Internal Level-shifting Circuit

12.2.4. HS1, HS2, and HS3
These pins are the grounds of the high-side floating
power supplies for each phase, and are connected to thenegative nodes of bootstrap capacitors, CBOOTx.
The HS1, HS2, and HS3 pins are internally connectedto the U, V, and W pins, respectively.

12.2.5. VCC1, VCC2, and VCC3
These are the logic supply pins for the built-in control
MICs. The VCC1, VCC2, and VCC3 pins must be
externally connected on a PCB because they are notinternally connected. To prevent malfunction induced bysupply ripples or other factors, put a 0.01 µF to 0.1 μF
ceramic capacitor, CVCCx, near these pins. To prevent
damage caused by surge voltages, put an 18 V to 20 V
Zener diode, DZ, between the VCCx and COMx pins.
Voltages to be applied between the VCCx and COMx
pins should be regulated within the recommended
operational range of VCC, given in Section 2.

12.2.6. COM1, COM2, and COM3
These are the logic ground pins for the built-in control
MICs. For proper control, the control parts in each phasemust be connected to the corresponding ground pin. The
COM1, COM2, and COM3 pins should be connected
externally on a PCB because they are not internallyconnected. Varying electric potential of the logic groundcan be a cause of improper operations. Therefore,
connect the logic ground as close and short as possible
to shunt resistors, RSx, at a single-point ground (or star
ground) which is separated from the power ground (seeFigure 12-4).
Moreover, extreme care should be taken when wiring
so that currents from the power ground do not affect the
COMx pin.
U1

CS

0
Set

4 COM10

12 COM2

Reset

20 COM30

VBx–HSx0

CDC
LS1 33LS2 30LS3 27

VBS(ON)

RS1
RS2
RS3

VBS(OFF)
Stays logic highQ

Connect the COM1, OCP3
COM2, and COM3 OCP2
pins on a PCB.
OCP1

0

Figure 12-3.

VDC

VBB 25

HINx

Waveforms at VBx–HSx Voltage Drop

Figure 12-4.

SCM1200MF-DSE Rev.2.4
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Create a single-point ground(a star ground) near RSx, but
keep it separated from thepower ground.

Connections to Logic Ground21

SCM1200MF Series
12.2.7. HIN1, HIN2, and HIN3;
LIN1, LIN2, and LIN3

U1

These are the input pins of the internal motor drivers
for each phase. The HINx pin acts as a high-side
controller; the LINx pin acts as a low-side controller.
Figure 12-5 shows an internal circuit diagram of the
HINx or LINx pin. This is a CMOS Schmitt trigger
circuit with a built-in 22 kΩ pull-down resistor, and its
input logic is active high. Input signals applied acrossthe HINx–COMx and the LINx–COMx pins in eachphase should be set within the ranges provided in Table
12-1, below. Note that dead time setting must be donefor HINx and LINx signals because the IC does not havea dead time generator.
The higher PWM carrier frequency rises, the more
switching loss increases. Hence, the PWM carrier
frequency must be set so that operational casetemperatures and junction temperatures have sufficientmargins against the absolute maximum ranges, specified
in Section 1.
If the signals from the microcontroller become
unstable, the IC may result in malfunctions. To avoid
this event, the outputs from the microcontroller output
line should not be high impedance.
Also, if the traces from the microcontroller to the
HINx or LINx pin (or both) are too long, the traces may
be interfered by noise. Therefore, it is recommended to
add an additional filter or a pull-down resistor near the
HINx or LINx pin as needed (see Figure 12-6).
Here are filter circuit constants for reference:- RIN1x: 33 Ω to 100 Ω- RIN2x: 1 kΩ to 10 kΩ
- CINx: 100 pF to 1000 pF
Care should be taken in adding RIN1x and RIN2x to thetraces. When they are connected to each other, the input
voltage of the HINx and LINx pins becomes slightly
lower than the output voltage of the microcontroller.
Table 12-1. Input Signals for HINx and LINx Pins
Parameter

High Level Signal

Low Level Signal

Input Voltage
Input Pulse
Width
PWM Carrier
Frequency
Dead Time

3 V < VIN < 5.5 V

0 V < VIN < 0.5 V≥0.5 μs≥0.5 μs≤20 kHz≥1.5 μs

5V

2 kΩ

HINx
(LINx)

22 kΩ

COMx

Figure 12-5.

Internal Circuit Diagram of HINx or
LINx Pin
U1

RIN1x

Input
signal

HINx(LINx)

RIN2x

CINx
SCM1200MF

Controller

Figure 12-6.

Filter Circuit for HINx or LINx Pin

12.2.8. LS1, LS2, and LS3
These are the emitter pins of the low-side IGBTs. For
current detection, the LS1, LS2, and LS3 pins should beconnected externally on a PCB via shunt resistors, RSx,
to the COMx pins.
When connecting a shunt resistor, place it as near as
possible to the IC with a minimum length of traces to theLSx and COMx pins. Otherwise, malfunction may occur
because a longer circuit trace increases its inductanceand thus increases its susceptibility to improper
operations. In applications where long PCB traces are
required, add a fast recovery diode, DRSx, between theLSx and COMx pins in order to prevent the IC from
malfunctioning.
U1
VBB 25

VDC

CS
DRS1
4 COM1LS1 33RS1

12 COM2

RS2

LS2 30DRS3

20 COM3

RS3

LS3 27

Add a fast recovery diode toa long trace.

Figure 12-7.
SCM1200MF-DSE Rev.2.4
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CDC

DRS2

Put a shunt resistor near
the IC with a minimum
length to the LSx pin.

Connections to LSx Pin
22

SCM1200MF Series
VFO

12.2.9. OCP1, OCP2, and OCP3
These pins serve as the inputs of the overcurrent
protection (OCP) for monitoring the currents going
through the output transistors.
Section 12.3.4 provides further information about the
OCP circuit configuration and its mechanism.

U1

5V

RFO

1 MΩ

2 kΩ

FOx

3.0 µs (typ.)Blanking
filterINT
50 Ω

Output SW turn-off

CFO
QFO

COMx

12.2.10. FO1, FO2, and FO3
Figure 12-8.

Internal Circuit Diagram of FOx Pin and
Its Peripheral Circuit
QFOON

FOx Pin
VoltagetD(FO)

VIL

0

Figure 12-9.

FOx Pin Delay Time, tD(FO)Fault Signal Voltage (V)TJ = 25 °C
0.5

Max.
0.4 Typ.
Min.
0.3
0.2
0.1
0
0

2

4

6

8

10

RFO (kΩ)

Figure 12-10. Fault Signal Voltage vs.
Pull-up Resistor, RFO
TJ = 25 °C
15Delay Time, tD(FO) (µs)

These pins operate as the fault signal outputs andshutdown signal inputs for each phase. Sections 12.3.1
and 12.3.2 explain the two functions in detail,respectively.
Figure 12-8 illustrates an internal circuit diagram of
the FOx pin and its peripheral circuit. Because of its
open-drain nature, each of the FOx pins should be tied
by a pull-up resistor, RFO, to the external power supply.
The external power supply voltage (i.e., the FO Pin
Pull-up Voltage, VFO) should range from 3.0 V to 5.5 V.
Figure 12-10 shows a relation between the FOx pin
voltage and the pull-up resistor, RFO. When the pull-up
resistor, RFO, has a too small resistance, the FOx pin
voltage at fault signal output becomes high due to theon-resistance of a built-in MOSFET, QFO (Figure 12-8).
Therefore, it is recommended to use a 1 kΩ to 22 kΩ
pull-up resistor when the Low Level Input Threshold
Voltage of the microcontroller, VIL, is set to 1.0 V.
To suppress noise, add a filter capacitor, CFO, near the
IC with minimizing a trace length between the FOx andCOMx pins. Note that, however, this additional filtering
allows a delay time, tD(FO), to occur, as seen in Figure12-9. The delay time, tD(FO), is a period of time whichstarts when the IC receives a fault flag turning on theinternal MOSFET, QFO, and continues until when the
FOx pin reaches its threshold voltage (VIL) of 1.0 V or
below (put simply, until the time when the IC detects alogic low state, “L”).
Figure 12-11 shows how the delay time, tD(FO), and thenoise filter capacitor, CFO, are related.
For avoiding repeated OCP activations, the external
microcontroller must shut off any input signals to the IC
within an OCP hold time, tP, after the internal MOSFET(QFO) turn-on. tP is 15 μs where minimum values ofthermal characteristics are taken into account. (For moredetails, see Section 12.3.4.)
When VIL is set to 1.0 V, it is recommended to use a0.001 μF to 0.01 μF noise filter capacitor, CFO, allowing
a sufficient margin to deal with variations incharacteristics.

Max.

10
Typ.
5

0
0.000

Min.

0.005

0.010

0.015

0.020

0.025

CFO (µF)

Figure 12-11.

Delay Time, tD(FO) vs. Filter Capacitor,
CFO

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SCM1200MF Series
Table 12-2. Shutdown Signals

12.3. Protection Functions
This section describes the various protection circuits
provided in the SCM1200MF series. The protection
circuits include the undervoltage lockout for power
supplies (UVLO), the simultaneous on-state prevention,
the overcurrent protection (OCP), and the thermal
shutdown (TSD). In case one or more of these protection
circuits are activated, the FOx pin outputs a fault signal;
as a result, the external microcontroller can stop theoperations of the three phases by receiving the fault
signal. The external microcontroller can also shut down
IC operations by inputting a fault signal to the FOx pin.
In the following functional descriptions, “HOx” denotes
a gate input signal on the high-side transistor, whereas“LOx” denotes a gate input signal on the low-side
transistor (see also the diagrams in Section 7).
“VBx–HSx” refers to the voltages between the VBx andHSx pins.

Parameter
Input
Voltage
Input Pulse
WidthHigh Level Signal

Low Level Signal

3 V < VIN < 5.5 V

0 V < VIN < 0.5 V≥3.0 μs≥3.0 μs

In Figure 12-12, FO1, FO2 and FO3 are all connected.
If an abnormal condition is detected by any one of theMICs, the high- and low-side transistors of all phases
turn off at once.

INT

1

RFO
CFO

12.3.1. Fault Signal Output
In case one or more of the following protections are
actuated, an internal MOSFET, QFO, turns on, then the
FOx pin becomes logic low (≤0.5 V).
1) Low-side undervoltage lockout (UVLO_VCC)
2) Overcurrent protection (OCP)
3) Simultaneous on-state prevention
4) Thermal shutdown (TSD)
While the FOx pin is in the low state, the high- andlow-side transistors of each phase turn off. In normal
operation, the FOx pin outputs a high signal of 5 V.
The fault signal output time of the FOx pin at OCP
activation is the OCP hold time (tP) of 26 μs (typ.), fixed
by a built-in feature of the IC itself (see Section 12.3.4).
The external microcontroller receives the fault signals
with its interrupt pin (INT), and must be programmed to
put the HINx and LINx pins to logic low within thepredetermined OCP hold time, tP.

12.3.2. Shutdown Signal Input
The FOx pin also acts as the input pin of shutdown
signals. When the FOx pin becomes logic low, the highand low-side transistors of each phase turn off. The
voltages and pulse widths of the shutdown signals to be
applied between the FOx and COMx pins are listed inTable 12-2.

FO1

9

FO2

17

FO3

4, 12, 20

COM

U1

VFO

Figure 12-12.

All-phase Shutdown Circuit

12.3.3. Undervoltage Lockout for Power
Supply (UVLO)
In case the gate-driving voltages of the output
transistors decrease, their steady-state power dissipations
increase. This overheating condition may cause
permanent damage to the IC in the worst case. To
prevent this event, the SCM1200MF series has theundervoltage lockout (UVLO) circuits for both of thehigh- and low-side power supplies.

12.3.3.1. Undervoltage Lockout for
High-side Power Supply(UVLO_VB)
Figure 12-13 shows operational waveforms of theundervoltage lockout for high-side power supply (i.e.,
UVLO_VB).
When the voltage between the VBx and HSx pins
(VBx–HSx) decreases to the Logic Operation Stop
Voltage (VBS(OFF) = 11.0 V) or less, the UVLO_VB
circuit in the corresponding phase gets activated and sets
only an HOx signal to logic low. When the voltage
between the VBx and HSx pins increases to the Logic
Operation Start Voltage (VBS(ON) = 11.5 V) or more, theIC releases the UVLO_VB operation. Then, the HOx
signal becomes logic high at the rising edge of the first
input command after the UVLO_VB release.
Any fault signals are not output from the FOx pin

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SCM1200MF Series
during the UVLO_VB operation. In addition, the VBx
pin has an internal UVLO_VB filter of about 3 μs, inorder to prevent noise-induced malfunctions.

HINx
0

LINx
HINx
0

UVLO_VCC
operation

0

VCCx

LINx

VCC(OFF)VCC(ON)0
UVLO_VB
operation

VBx-HSx
VBS(OFF)0

VBS(ON)HOx

UVLO release

0

0

HOx

About 3 µs

HOx restarts at
positive edge after
UVLO_VB release.

About 3 µs

LOx responds to input signal.

LOx
0

0

FOx

LOx

0

0

FOx

No FOx output at UVLO_VB

Figure 12-14.

UVLO_VCC Operational Waveforms

0

Figure 12-13.

UVLO_VB Operational Waveforms

12.3.3.2. Undervoltage Lockout for
Low-side Power Supply(UVLO_VCC)
Figure 12-14 shows operational waveforms of theundervoltage lockout for low-side power supply (i.e.,
UVLO_VCC).
When the VCCx pin voltage decreases to the Logic
Operation Stop Voltage (VCC(OFF) = 11.0 V) or less, theUVLO_VCC circuit in the corresponding phase gets
activated and sets both of HOx and LOx signals to logic
low. When the VCCx pin voltage increases to the Logic
Operation Start Voltage (VCC(ON) = 11.5 V) or more, theIC releases the UVLO_VCC operation. Then it resumes
transmitting the HOx and LOx signals according to input
commands on the HINx and LINx pins.
During the UVLO_VCC operation, the FOx pin
becomes logic low and sends fault signals. In addition,
the VCCx pin has an internal UVLO_VCC filter ofabout 3 μs, in order to prevent noise-induced
malfunctions.

12.3.4. Overcurrent Protection (OCP)
Figure 12-15 is an internal circuit diagram describing
the OCPx pin and its peripheral circuit.
The OCPx pin detects overcurrents with voltage
across external shunt resistors, RSx. Becuase the OCPx
pin is internally pulled down, the OCPx pin voltage
increases proportionally to a rise in the currents running
through the shunt resistors, RSx.
Figure 12-16 is a timing chart that represents
operation waveforms during OCP operation. When the
OCPx pin voltage increases to the OCP Threshold
Voltage (VTRIP = 0.50 V) or more, and remains in thiscondition for a period of the OCP Blanking Time(tBK = 1.65 μs or tBK = 0.54 μs) or longer, the OCPx
circuit is activated. The enabled OCPx circuit shuts off
the output transistors and puts the FOx pin into a low
state. Then, output current decreases as a result of theoutput transistors turn-off. Even if the OCPx pin voltage
falls below VTRIP, the IC holds the FOx pin in the low
state for a fixed OCP hold time (tP) of 26 μs (typ.). Then,the output transistors operate according to input signals.
The OCP is used for detecting abnormal conditions,such as an output transistor shorted. In case short-circuit
conditions occur repeatedly, the output transistors can be
destroyed. To prevent such event, motor operation must
be controlled by the external microcontroller so that it
can immediately stop the motor when fault signals aredetected.
Care should also be taken in using a 3-shunt resistor
system in your application. The IC running on the
3-shunt resistor system only shuts off the output
transistor in the phase where an overcurrent condition

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SCM1200MF Series
exists. And a fault signal is transmitted from the FOx pinof the phase being under the overcurrent condition.
As already shown in Figure 12-12, if all of the FOxpins being used makes a short circuit, a fault signal sentfrom the corresponding phase can turn off the output
transistors of all phases (see Section 12.3.2).

HINx
0

LINx
0

tDELAY 0.3 µs (typ.)tBK

For proper shunt resistor setting, your applicationmust meet the following:● Use the shunt resistor that has a recommended
resistance, RSx (see Section 2).
● Set the OCPx pin input voltage to vary within the
rated OCP pin voltages, VOCP (see Section 1).
● Keep the current through the output transistors below
the rated output current (pulse), IOP (see Section 1).
It is required to use a resistor with low internal
inductance because high-frequency switching current
will flow through the shunt resistors, RSx. In addition,choose a resistor with allowable power dissipationaccording to your application.
When you connect a CR filter (i.e., a pair of a filter
resistor, RO, and a filter capacitor, CO) to the OCPx pin,care should be taken in setting the time constants of RO
and CO. The larger the time constant, the longer the timethat the OCPx pin voltage rises to VTRIP. And this may
cause permanent damage to the transistors.
Consequently, a propagation delay of the IC must be
taken into account when you determine the time
constants. For RO and CO, their time constants must be
set to the values listed in Table 12-3.
The filter capacitor, CO, should also be placed near theIC, between the OCPx and COMx pins with a minimal
length of traces.
Note that overcurrents are undetectable when one ormore of the U, V, and W pins or their traces are shorted
to ground (ground fault). In case any of these pins falls
into a state of ground fault, the output transistors may bedestroyed.
U1

VTRIP

tBK

tBK

OCPx
VTRIP

0

HOx responds to input signal.

HOx
0

LOx
0

FOx restarts
automatically after t P.

FOx
tP
0

Figure 12-16.

OCP Operational Waveforms

Table 12-3. Reference Time Constants for CR Filter
Part NumberTime Constant(µs)

SCM1242MF
SCM1256MF≤0.22

SCM1260MF

≤1

VBB
-

OCPx

+

200 kΩ

Blanking
filter

1.65 µs (typ.)COx

Output SW turn-off
and QFO turn-on

COMx
LSx
A/D

ROx

DRSx

RSx

COM

Figure 12-15.

Internal Circuit Diagram of OCPx Pin
and Its Peripheral Circuit

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SCM1200MF Series
12.3.5. Simultaneous On-state Prevention
In case both of the HINx and LINx pins receive logic
high signals at once, the high- and low-side transistors
turn on at the same time, causing overcurrents to passthrough. As a result, the switching transistors will be
destroyed. To prevent this event, the simultaneous
on-state prevention circuit is built into each of the MICs.
Note that incorrect command input and noiseinterference are also largely responsible for such asimultaneous-on condition.
When logic high signals are asserted on the HINx and
LINx pins at once, as in Figure 12-17, this function gets
activated and turns the high- and low-side transistors off.
Then, while the function is being enabled, the FOx pin
becomes logic low and sends fault signals. After the IC
comes out of the simultaneous on-state condition,"HOx" and "LOx" start responding in accordance with
HINx and LINx input commands again.
To prevent noise-induced malfunctions, thesimultaneous on-state prevention circuit has a filter ofabout 0.8 μs.
Note that the function does not have any of dead-time
programming circuits. Therefore, input signals to the
HINx and LIN pins must have proper dead times as
defined in Section 12.2.7.
Simultaneous on-stateprevention enabled

HINx(see Section 7).
When the temperature of any one of the MICs
exceeds the TSD Operating Temperature (TDH = 150 °C),the corresponding TSD circuit is activated. When thetemperature of any one of the MICs decreases to the
TSD Releasing Temperature (TDL = 120 °C) or less, theshutdown condition is released. The transistors thenresume operating according to input signals.
During the TSD operation, the FOx pin becomes logic
low and transmits fault signals.
Note that junction temperatures of the output
transistors themselves are not monitored; Therefore, do
not use the TSD function as an overtemperature
prevention for the output transistors.

HINx
0

LINx
0
TSD operation

TJ(MIC)

TDH
TDL

0

HOx

HOx responds to input
signal.

0

LOx
0
0

LINx

FOx
0

HOx

About 0.8 µs

0Figure 12-18.

0LOx

TSD Operational Waveforms

About 0.8 µs

0

FOx
0

Figure 12-17. Operational Waveforms of
Simultaneous On-state Prevention

12.3.6. Thermal Shutdown (TSD)The SCM1200MF series incorporates a thermal
shutdown (TSD) circuit in each phase. Figure 12-18
shows TSD operational waveforms.
In case of overheating (e.g., increased power
dissipation due to overload, or elevated ambient
temperature at the device), the IC shuts down the highand low-side output transistors.
The TSD circuit in each MICs monitors temperatures

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SCM1200MF Series
13. Design Notes
This section also employs the notation systemdescribed in the beginning of the previous section.

13.1. PCB Pattern Layout
Figure 13-1 shows a schematic diagram of a motor
drive circuit. The circuit consists of current paths having
high frequencies and high voltages, which also bringabout negative influences on IC operation, noiseinterference, and power dissipation.
Therefore, PCB trace layouts and component
placements play an important role in circuit designing.
Current loops, which have high frequencies and highvoltages, should be as small and wide as possible, inorder to maintain a low-impedance state.
In addition, ground traces should be as wide and short
as possible so that radiated EMI levels can be reduced.
U1
VBB

VDC
25

● When mounting a heatsink, it is recommended to use
silicone greases. If a thermally conductive sheet or anelectrically insulating sheet is used, package cracks
may be occurred due to creases at screw tightening.
Therefore, you should conduct thorough evaluations
before using these materials.
● When applying a silicone grease, make sure that there
are no foreign substances between the IC and aheatsink. Extreme care should be taken not to apply asilicone grease onto any device pins as much as
possible. The following requirements must be met for
proper grease application:− Grease thickness: 100 µm− Heatsink flatness: ±100 µm− Apply a silicone grease within the area indicated in
Figure 13-2, below.
Screw hole

Screw hole

5.8

5.8

M3

Thermal silicone
grease application area

M3

Heatsink
MIC3

W

LS3

MIC2

3.1
27

29

V
LS2

MIC1

26

U

LS1

Ground traces
should be wideand short.

3.1

Unit: mm

Reference Application Area for Thermal
Silicone GreaseM

13.3. Considerations in IC Characteristics
Measurement

30

32

33

Figure 13-2.

37.1

High-frequency, high-voltage
current loops should be as
small and wide as possible.

Figure 13-1. High-frequency, High-voltage Current
Paths

13.2. Considerations in Heatsink Mounting
The following are the key considerations andguidelines for mounting a heatsink:● It is recommended to use a pair of a metric screw ofM3 and a plain washer of 7 mm (φ).
To tighten the screws, use a torque screwdriver.
Tighten the two screws firstly up to about 30% of the
maximum screw torque, then finally up to 100% of
the prescribed maximum screw torque. Perform
appropriate tightening within the range of screw
torque defined in Section 4.

When measuring the breakdown voltage or leakage
current of the transistors incorporated in the IC, note thatthe gate and emitter of each transistor should have thesame potential.
Moreover, care should be taken during themeasurement because the collectors of the high-side
transistors are all internally connected to the VBB pin..
The output (U, V, and W) pins are connected to theemitters of the corresponding high-side transistors,
whereas the LSx pins are connected to the emitters of
the low-side transistors. The gates of the high-side
transistors are pulled down to the corresponding output(U, V, and W) pins; similarly, the gates of the low-side
transistors are pulled down to the COMx pins.
Note that the output, LSx, and COMx pins must beconnected appropriately before measuring breakdown
voltage or leak current. Otherwise, the switchingtransistors may result in permanent damage.
The following are circuit diagrams representing
typical measurement circuits for breakdown voltage:
Figure 13-3 shows the high-side transistor (Q1H) in the
U-phase; Figure 13-4 shows the low-side transistor (Q1L)
in the U-phase. And all the pins that are not represented
in these figures are open.

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SCM1200MF Series
Before conducting a measurement, be sure to isolate
the ground of the to-be-measured phase from those ofother two phases not to be measured. Then, in each of
the two phases, which are separated not to be measured,connect the LSx and COMx pins each other at the samepotential, and leave them unused and floated.
U1
VBB

25

Q1H
4 COM1

MIC1

U 32

V

Q1L
LS1
33
31

This section describes the procedures to calculate
power losses in a switching transistor, and to estimate ajunction temperature. Note that the descriptions listed
here are applicable to the SCM1200MF series, which iscontrolled by a 3-phase sine-wave PWM driving
strategy. Total power loss in an IGBT can be obtainedby taking the sum of steady-state loss, PON, andswitching loss, PSW. The following subsections containthe mathematical procedures to calculate the power
losses in an IGBT and its junction temperature.
For quick and easy references, we offer calculation
support tools online. Please visit our website to find out
more.
● DT0051: SCM1200MF Series Calculation Tool

Q2H

http://www.semicon.sanken-ele.co.jp/en/calc-tool/igbt1_caltool_en.html

V
12 COM2

14. Calculating Power Losses andEstimating Junction Temperature

29

MIC2

Q2L

14.1. IGBT Steady-state Loss, PON

LS2

30

Q3H
20 COM3

MIC3

W

26

Q3L
LS3

27

Figure 13-3. Typical Measurement Circuit for
High-side Transistor (Q1H) in U-phase

Steady-state loss in an IGBT can be computed byusing the VCE(SAT) vs. IC curves, listed in Section 15.3.1.
As expressed by the curves in Figure 14-1, linear
approximations at a range the IC is actually used are
obtained by: VCE(SAT) = α × IC + β.
The values gained by the above calculation are thenapplied as parameters in Equation (4), below. Hence, theequation to obtain the IGBT steady-state loss, PON, is:
PON =

U1
VBB

1 1
4
= α( +
M × cos θ) IM 2
2 2 3π√2 1 π+β ( + M × cos θ) IM .
π
2 8

25

Q1H
4 COM1

U 32

MIC1

1 π
(φ) × IC (φ) × DT × dφ
∫ V
2π 0 CE(SAT)

(4)

V

Q1L

LS1
33
31

Q2H
12 COM2

V
29

MIC2

Q2L
LS2

Where:VCE(SAT) is the collector-to-emitter saturation voltage of
the IGBT (V),IC is the collector current of the IGBT (A),DT is the duty cycle, which is given by

30

Q3H
20 COM3

MIC3

DT =
W

26

Q3L
LS3

27

Figure 13-4. Typical Measurement Circuit for
Low-side Transistor (Q1L) in U-phase

1 + M × sin(φ + θ),
2

M is the modulation index (0 to 1),cosθ is the motor power factor (0 to 1),
IM is the effective motor current (A),α is the slope of the linear approximation in the
VCE(SAT) vs. IC curve, andβ is the intercept of the linear approximation in the
VCE(SAT) vs. IC curve.

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SCM1200MF Series
VCC=15V

2.5
25°C

VCE(SAT) (V)2.0

y = 0.036x + 1.359

1.5
1.0

75°C

0.5

125°C

y = 0.108x + 0.831

0.0
0

1

Figure 14-1.

2

3

4 5
IC (A)

6

7

8

9

10

Linear Approximate Equation of
VCE(SAT) vs. IC Curve

14.2. IGBT Switching Loss, PSW
Switching loss in an IGBT can be calculated by
Equation (5), letting IM be the effective current value ofthe motor:
PSW =

VDC
√2
× fC × αE × IM ×
.
π
300

(5)

Where:
fC is the PWM carrier frequency (Hz),VDC is the main power supply voltage (V), i.e., the
VBB pin input voltage, andαE is the slope of the switching loss curve (see Section
0).

14.3. Estimating Junction Temperature of
IGBT
The junction temperature of an IGBT, TJ, can be
estimated with Equation (6):
TJ = R (J−C)Q × (PON + PSW ) + TC .

(6)

Where:
R(J-C)Q is the junction-to-case thermal resistanceper IGBT (°C/W), andTC is the case temperature (°C), measured at the point
defined in Figure 3-1.

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SCM1200MF Series
15. Performance Curves
15.1. Transient Thermal Resistance Curves
The following graphs represent transient thermal resistance (the ratios of transient thermal resistance), withsteady-state thermal resistance = 1.

15.1.1. SCM1261MF

Ratio of Transient Thermal Resistance

1.00

0.10

0.01
1

10

100

1000

10000

1000

10000

Time (ms)15.1.2. SCM1242MF, SCM1263MF

Ratio of Transient Thermal Resistance

1.00

0.10

0.01
1

10

100
Time (ms)

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SCM1200MF Series
15.1.3. SCM1265MF

Ratio of Transient Thermal Resistance

1.00

0.10

0.01
1

10

100

1000

10000

1000

10000

Time (ms)15.1.4. SCM1256MF

Ratio of Transient Thermal Resistance

1.00

0.10

0.01
1

10

100
Time (ms)

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SCM1200MF Series
15.2. Performance Curves of Control Parts
Figure 15-1 to Figure 15-27 provide performance curves of the control parts integrated in the SCM1200MF series,
including variety-dependent characteristics and thermal characteristics. TJ represents the junction temperature of thecontrol parts.
Table 15-1. Typical Characteristics of Control Parts
Figure Number
Figure 15-1
Figure 15-2
Figure 15-3
Figure 15-4
Figure 15-5
Figure 15-6
Figure 15-7
Figure 15-8
Figure 15-9
Figure 15-10
Figure 15-11
Figure 15-12
Figure 15-13
Figure 15-14
Figure 15-15
Figure 15-16
Figure 15-17
Figure 15-18
Figure 15-19
Figure 15-20
Figure 15-21
Figure 15-22
Figure 15-23
Figure 15-24
Figure 15-25
Figure 15-26
Figure 15-27

Figure Caption
Logic Supply Current in 3-phase Operation, ICC vs. TC
Logic Supply Current in 3-phase Operation, ICC vs. VCCx Pin Voltage, VCC
Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. TC
Logic Supply Current in 1-phase Operation (HINx = 5 V), IBS vs. TC
Logic Supply Current in 1-phase Operation (HINx = 0 V), IBS vs. VBx Pin Voltage, VB
Logic Operation Start Voltage, VBS(ON) vs. TC
Logic Operation Stop Voltage, VBS(OFF) vs. TC
Logic Operation Start Voltage, VCC(ON) vs. TC
Logic Operation Stop Voltage, VCC(OFF) vs. TC
UVLO_VB Filtering Time vs. TC
UVLO_VCC Filtering Time vs. TC
Input Current at High Level (HINx or LINx), IIN vs. TC
High Level Input Signal Threshold Voltage, VIH vs. TC
Low Level Input Signal Threshold Voltage, VIL vs. TC
High-side Turn-on Propagation Delay vs. TC (from HINx to HOx)
High-side Turn-off Propagation Delay vs. TC (from HINx to HOx)
Low-side Turn-on Propagation Delay vs. TC (from LINx to LOx)
Low-side Turn-off Propagation Delay vs. TC (from LINx to LOx)
Minimum Transmittable Pulse Width for High-side Switching, tHIN(MIN) vs. TC
Minimum Transmittable Pulse Width for Low-side Switching, tLIN(MIN) vs. TC
Typical Output Pulse Widths, tHO, tLO vs. Input Pulse Widths, tHIN, tLIN
FOx Pin Voltage in Normal Operation, VFOL vs. TC
OCP Threshold Voltage, VTRIP vs. TC
Blanking Time, tBK + Propagation Delay, tD vs. TC (SCM124xMF)
Blanking Time, tBK + Propagation Delay, tD vs. TC (SCM126xMF)
OCP Hold Time, tP vs. TC
Filtering Time of Simultaneous On-state Prevention vs. TC

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201533

VCC x= 15 V, HINx = 0 V, LINx = 0 V

5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

HIN x= 0 V, LINx = 0 V

4.0
Max.

3.5
3.0

Typ.
Min.

ICC (mA)

ICC (mA)

SCM1200MF Series

2.5
125°C
25°C

2.0
1.5

−30°C

1.0
0.5
0.0
-30

0

30

60

90

120

150

12

13

14

15

TC (°C)

Figure 15-1.

17

18

19

20

VCC (V)

Logic Supply Current in 3-phase Operation,
ICC vs. TC

Figure 15-2.

VBx = 15 V, HINx = 0 V

250

16

Logic Supply Current in 3-phase Operation,
ICC vs. VCCx Pin Voltage, VCC

VBx = 15 V, HINx = 5 V

250
Max.

200

150

Typ.

150

Min.
100

Typ.

IBS (µA)

IBS (µA)

Max.
200

50

Min.
100
50

0
-30

0

30

60

90

120

0

150

-30

0

30

TC (°C)

Logic Supply Current in 1-phase Operation(HINx = 0 V), IBS vs. TC

Figure 15-4.

90

120

150

Logic Supply Current in 1-phase Operation(HINx = 5 V), IBS vs. TC

12.50

VBx = 15 V

180
160
140
120
100
80
60
40
20
0

12.25
12.00

125°C
25°C
−30°C

VBS(ON) (V)IBS (µA)

Figure 15-3.

60TC (°C)

11.75

Max.

11.50
Typ.

11.25

Min.

11.00
10.75
10.50

12

13

14

15

16

17

18

19

20

-30

0

Figure 15-5. Logic Supply Current in 1-phase
Operation (HINx = 0 V), IBS vs. VBx Pin Voltage, VB

30

60

90

120

150

TC (°C)VB (V)

Figure 15-6.

Logic Operation Start Voltage, VBS(ON) vs.
TC

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201534

12.50

12.0
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0

12.25
12.00
Max.
Typ.
Min.

VCC(ON) (V)VBS(OFF) (V)SCM1200MF Series

11.75
Max.

11.50

Typ.

11.25

Min.

11.00
10.75
10.50

-30

0

30

60

90

120

150

-30

0

30

TC (°C)

Logic Operation Stop Voltage, VBS(OFF) vs.
TC

12.0
11.8
11.6
11.4
11.2
11.0
10.8
10.6
10.4
10.2
10.0

Max.
Typ.
Min.

-30

0

30

60

90

120

Figure 15-8.

UVLO_VB Filtering Time (µs)

VCC(OFF) (V)

Figure 15-7.

120

150

5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

Max.
Typ.
Min.

-30

150

0

30

60

90

120

150

TC (°C)

Logic Operation Stop Voltage, VCC(OFF) vs.
TC

4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

Figure 15-10.

UVLO_VB Filtering Time vs. TC

INHx or INLx = 5 V

400
Max.
Typ.
Min.

IIN (µA)UVLO_VCC Filtering Time (µs)

90

Logic Operation Start Voltage, VCC(ON) vs.
TC

TC (°C)

Figure 15-9.

60TC (°C)

350

Max.

300

Typ.

250
Min.

200
150
100
50
0

-30

0

30

60

90

120

150

-30

TC (°C)

Figure 15-11.

UVLO_VCC Filtering Time vs. TC

0

30

60

90

120

150

TC (°C)

Figure 15-12.

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

Input Current at High Level (HINx or
LINx), IIN vs. TC

35

SCM1200MF Series

2.6

2.0

2.4

1.8

2.0

Max.

1.8
Typ.

1.6

Min.

1.4

1.6

VIL (V)VIH (V)

2.2

Max.

1.4

Typ.

1.2

Min.

1.0

1.2
1.0

0.8
-30

0

30

60

90

120

150

-30

0

30

TC (°C)

Figure 15-13.

High Level Input Signal Threshold
Voltage, VIH vs. TC

Figure 15-14.

90

120

150

Low Level Input Signal Threshold
Voltage, VIL vs. TC

800

500
Max.

400

Typ.
300

Min.

200
100
0
-30

0

30

60

90

120

High-side Turn-off Propagation
Delay (ns)High-side Turn-on Propagation
Delay (ns)

600

700
600

Max.

500

Typ.

400

Min.

300
200
100
0
-30

150

0

30

TC (°C)

High-side Turn-on Propagation Delay vs.
TC (from HINx to HOx)

600
500
400

Max.

300

Typ.
Min.

200
100
0
-30

0

30

60

90

120

150

Figure 15-16.

90

120

150

Low-side Turn-on Propagation Delay vs.
TC (from LINx to LOx)

High-side Turn-off Propagation Delay vs.
TC (from HINx to HOx)

800
700
600

Max.

500

Typ.

400
Min.

300
200
100
0
-30

TC (°C)

Figure 15-17.

60

TC (°C)

Low-side Turn-off Propagation
Delay (ns)Figure 15-15.

Low-side Turn-on Propagation
Delay (ns)60

TC (°C)

0

30

60

90

120

150

TC (°C)

Figure 15-18.

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

Low-side Turn-off Propagation Delay vs.
TC (from LINx to LOx)

36

500
450
400
350
300
250
200
150
100
50
0

Max.
Typ.
Min.

-30

0

30

60

90

120

tLIN(MIN) (ns)tHIN(MIN) (ns)

SCM1200MF Series

150

500
450
400
350
300
250
200
150
100
50
0

Max.
Typ.
Min.

-30

0

30

TC (°C)

Figure 15-19. Minimum Transmittable Pulse Width for
High-side Switching, tHIN(MIN) vs. TC

200

VFOL (mV)tHO, tLO(typ.) (ns)

150

250

1000
800
600
400

Max.
Typ.
Min.

150
100
50

200
0

0
0

200

400

600

800

1000

1200

-30

0

30

Figure 15-21.

60

90

120

150

TC (°C)tHIN, tLIN (ns)Typical Output Pulse Widths, tHO, tLO vs.

Figure 15-22.

FOx Pin Voltage in Normal Operation,
VFOL vs. TC

Input Pulse Widths, tHIN, tLIN

4.0

530

3.5
Max.

510
Typ.

500
490

Min.

480

tBK + tD (µs)

540

520

VTRIP (mV)120

FOx pull-up voltage = 5 V, RFO = 3.3 kΩ, FOx in logic low

300

High side
Low side

1200

90

Figure 15-20. Minimum Transmittable Pulse Width for
Low-side Switching, tLIN(MIN) vs. TC

TC = 25 °C, VCCx = 15 V

1400

60

TC (°C)

3.0
2.5
2.0

Max.

1.5

Typ.

1.0

Min.

0.5

470

0.0

460
-30

0

30

60

90

120

150

-30

OCP Threshold Voltage, VTRIP vs. TC

30

60

90

120

150

TC (°C)TC (°C)

Figure 15-23.

0

Figure 15-24.

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

Blanking Time, tBK + Propagation Delay,tD vs. TC (SCM124xMF)

37

SCM1200MF Series

1.4

1.0

Max.

0.8
Typ.

0.6

Min.

0.4
0.2
0.0
-30

0

30

60

90

120

150

TC (°C)

Figure 15-25.

tP (µs)tBK + tD (µs)

1.2

50
45
40
35
30
25
20
15
10
5
0

Max.
Typ.
Min.

-30

0

30

60

90

120

150

TC (°C)

Blanking Time, tBK + Propagation Delay,tD vs. TC (SCM126xMF)

Figure 15-26.

OCP Hold Time, tP vs. TC

Filtering Time of Simultaneous
On-state Prevention (µs)

1.4
1.2
Max.

1.0
0.8

Typ.
0.6
Min.

0.4
0.2
0.0
-30

0

30

60

90

120

150

TC (°C)

Figure 15-27.

Filtering Time of Simultaneous On-state
Prevention vs. TC

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201538

SCM1200MF Series
15.3. Performance Curves of Output Parts
15.3.1. Output Transistor Performance Curves
15.3.1.1. SCM1261M
VCCx = 15 V

2.5

2.0

2.0

1.5

1.5

1.0

VF (V)VCE(SAT) (V)

2.5

25°C
75°C

0.5

75°C
125°C

0.0
1

1.0
0.5

125°C

0

25°C

2

3

4

5

6

7

8

9

0.0

10

0

1

2

3

4
5
IF (A)IC (A)

Figure 15-28.

IGBT VCE(SAT) vs. IC

Figure 15-29.

6

7

8

9

10

Freewheeling Diode VF vs. IF

15.3.1.2. SCM1242MF, SCM1263MF
VCCx = 15 V

2.5

2.5

2.0

2.0

VF (V)VCE(SAT) (V)

25°C
1.5
1.0

25°C

1.5
1.0

75°C
0.5

0.5

75°C

125°C

125°C

0.0

0.0
0

1

2

3

4

5

6

7

8

9 10 11 12 13 14 15

0

1

2

3

Figure 15-30.

IGBT VCE(SAT) vs. IC

4

5

6

7

8

9 10 11 12 13 14 15

IF (A)IC (A)

Figure 15-31.

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

Freewheeling Diode VF vs. IF

39

SCM1200MF Series
15.3.1.3. SCM1265MF
VCCx = 15 V

2.5

2.5
2.0
25°C
1.5

25°C

1.5

VF (V)VCE(SAT) (V)

2.0

1.0

125°C

0.0

0.0
0

2

75°C
125°C

0.5

75°C

0.5

1.0

4

6

8

10

12

14

16

18

0

20

2

4

6

10

12

14

16

18

20

IF (A)IC (A)

Figure 15-32.

8

IGBT VCE(SAT) vs. IC

Figure 15-33.

Freewheeling Diode VF vs. IF

15.3.1.4. SCM1256MF
VCCx = 15 V

2.5

2.5
2.0
25°C

1.5

25°C

1.5

VF (V)VCE(SAT) (V)

2.0

1.0

1.0

0.5

75°C

0.5

125°C

0.0

0.0
0

2

4

75°C
125°C

6

8 10 12 14 16 18 20 22 24 26 28 30

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

IF (A)IC (A)

Figure 15-34.

IGBT VCE(SAT) vs. IC

Figure 15-35.

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

Freewheeling Diode VF vs. IF

40

SCM1200MF Series
15.3.2. Switching Loss Curves
Conditions: VBB pin voltage = 300 V, half-bridge circuit with inductive load.

15.3.2.1. SCM1261MF

400

E (µJ)

Turn-on

200
100

200
100

Turn-off

0
0

1

2

3

4

5

6

7

Turn-off

0
8

9

10

0

1

2

3

IC (A)

Figure 15-36.

4

5

6

7

8

9

10

IC (A)

High-side Switching Loss (TJ = 25 °C)

Figure 15-37.

VBx = 15 V

400

VCCx = 15 V

500

SCM12161MF

500

Low-side Switching Loss (TJ = 25 °C)

400

SCM1261MF

E (µJ)

Turn-on300

300

Turn-on

300

300
200

E (µJ)E (µJ)

SCM1261MF

400

VCCx = 15 V

500

SCM1261MF

VBx = 15 V

500

Turn-on200

Turn-off
100

100

Turn-off

0
0

1

2

3

4

0
5

6

7

8

9

10

0

1

IC (A)

Figure 15-38.

High-side Switching Loss (TJ = 125 °C)

2

3

4

5

6

7

8

9

10

IC (A)

Figure 15-39.

Low-side Switching Loss (TJ = 125 °C)

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201541

SCM1200MF Series

700
600

600

E (µJ)

400
300
200

Turn-on

500
400
300

Turn-off

200

Turn-on

100

100

0

0
0

1

2

3

4

5

6

7

8

0

9 10 11 12 13 14 15

1

2

3

4

5

IC (A)

Figure 15-40

High-side Switching Loss (TJ = 25 °C)

Figure 15-41.

VBx = 15 V

78

9 10 11 12 13 14 15

700

Turn-off

600

Low-side Switching Loss (TJ = 25 °C)

VCCx = 15 V

800

SCM1242MF

800

Turn-on

700
600

500

500

400

Turn-on300

E (µJ)E (µJ)

6

IC (A)

SCM1242MF

E (µJ)

700

Turn-off

500

VCCx = 15 V

800

SCM1242MF

VBx = 15 V

800

SCM1242MF

15.3.2.2. SCM1242MF

400

200

200

100

100

0

Turn-off

300

0
0

1

2

3

4

5

6

7

8

9 10 11 12 13 14 15

0

1

2

IC (A)

Figure 15-42.

High-side Switching Loss (TJ = 125 °C)

3

4

5

6

7

8

9 10 11 12 13 14 15

IC (A)

Figure 15-43.

Low-side Switching Loss (TJ = 125 °C)

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201542

SCM1200MF Series
15.3.2.3. SCM1263MF

Turn-off

Turn-on

500
400

400

E (µJ)

300
200

Turn-on

100

300
200

Turn-off

100

0

0
0

1

2

3

4

5

6

7

8

9 10 11 12 13 14 15

0

1

2

3

4

5

IC (A)

High-side Switching Loss (TJ = 25 °C)

600

Turn-off

500

E (µJ)

78

9 10 11 12 13 14 15

400
300

Turn-on200

Low-side Switching Loss (TJ = 25 °C)

VCCx = 15 V

700
600

Turn-on500

E (µJ)

VBx = 15 V

700

Figure 15-45.

SCM12163MF

Figure 15-44

6

IC (A)

SCM1263MF

E (µJ)

500

600

SCM1263MF

600

VCCx = 15 V

700

SCM1263MF

VBx = 15 V

700

400
300

Turn-off

200
100

100

0

0
0

1

2

3

4

5

6

7

8

9 10 11 12 13 14 15

0

1

2

IC (A)

Figure 15-46.

High-side Switching Loss (TJ = 125 °C)

3

4

5

6

7

8

9 10 11 12 13 14 15

IC (A)

Figure 15-47.

Low-side Switching Loss (TJ = 125 °C)

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201543

SCM1200MF Series
15.3.2.4. SCM1265MF

600
400

Turn-off

200

Turn-on800

Turn-onE (µJ)

600
400

Turn-off

200

0

0
0

2

4

6

8

10

12

14

16

18

20

0

2

4

6

IC (A)

High-side Switching Loss (TJ = 25 °C)

VBx = 15 V

1200
1000

600

Turn-on

400

10

12

14

16

18

20

Low-side Switching Loss (TJ = 25 °C)

VCCx = 15 V

1200
1000

Turn-on800

E (µJ)E (µJ)

800

Figure 15-49.

SCM12165MF

Figure 15-48

8

IC (A)

SCM1265MF

E (µJ)

800

1000

SCM1265MF

1000

VCCx = 15 V

1200

SCM1265MF

VBx = 15 V

1200

600
400

Turn-off

200

200

Turn-off
0

0
0

2

4

6

8

10

12

14

16

18

20

0

2

IC (A)

Figure 15-50.

High-side Switching Loss (TJ = 125 °C)

4

6

8

10

12

14

16

18

20

IC (A)

Figure 15-51.

Low-side Switching Loss (TJ = 125 °C)

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201544

SCM1200MF Series
15.3.2.5. SCM1256MF

SCM1256MF

1200

Turn-off

Turn-off

1200
1000
800

800

E (µJ)

600
400

Turn-on200

600

Turn-on

400
200

0

0
0

5

10

15

20

25

30

0

5

10

IC (A)

High-side Switching Loss (TJ = 25 °C)

VBx = 15 V

1400
1200

Turn-off

800

E (µJ)E (µJ)

1000

600

Turn-on

400
200
0
0

5

10

15

20

25

Figure 15-53.

SCM1256MF

Figure 15-52.

20

25

30

30

High-side Switching Loss (TJ = 125 °C)

Low-side Switching Loss (TJ = 25 °C)

VCCx = 15 V

1800
1600
1400
1200
1000
800
600
400
200
0

Turn-off

Turn-on0

IC (A)

Figure 15-54.

15

IC (A)

SCM1256MF

E (µJ)

1000

VCCx = 15 V

1400

SCM1256MF

VBx = 15 V

1400

5

10

15

20

25

30

IC (A)

Figure 15-55.

Low-side Switching Loss (TJ = 125 °C)

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201545

SCM1200MF Series
15.4. Allowable Effective Current Curves
The following curves represent allowable effective currents in 3-phase sine-wave PWM driving with parameters suchas typical VCE(SAT) and typical switching losses.
Operating conditions: VBB pin input voltage, VDC = 300 V; VCCx pin input voltage, VCC = 15 V; modulation index,
M = 0.9; motor power factor, cosθ = 0.8; junction temperature, TJ = 150 °C.

15.4.1. SCM1261MF
fC = 2 kHz

Allowable Effective Current (Arms)

10

8

6

4

2

0
25

50

75

100

125

150

TC (°C)
Figure 15-56.

Allowable Effective Current (fC = 2 kHz): 10 A Device
fC = 16 kHz

Allowable Effective Current (Arms)

10

8

6

4

2

0
25

50

75

100

125

150

TC (°C)
Figure 15-57.

Allowable Effective Current (fC = 16 kHz): 10 A Device

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

46

SCM1200MF Series
15.4.2. SCM1242MF, SCM1263MF
fC = 2 kHz

Allowable Effective Current (Arms)

15

10

5

0
25

50

75

100

125

150

TC (°C)
Figure 15-58.

Allowable Effective Current (fC = 2 kHz): 15 A Devices
fC = 16 kHz

Allowable Effective Current (Arms)

15

10

5

0
25

50

75

100

125

150

TC (°C)
Figure 15-59.

Allowable Effective Current (fC = 16 kHz): 15 A Devices

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201547

SCM1200MF Series

Allowable Effective Current (Arms)

15.4.3. SCM1265MF
fC = 2 kHz

20

15

10

5

0
25

50

75

100

125

150

TC (°C)
Figure 15-60.

Allowable Effective Current (fC = 2 kHz): 20 A Devices
fC = 16 kHz

Allowable Effective Current (Arms)

20

15

10

5

0
25

50

75

100

125

150

TC (°C)
Figure 15-61.

Allowable Effective Current (fC = 16 kHz): 20 A Devices

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

48

SCM1200MF Series

Allowable Effective Current (Arms)

15.4.4. SCM1256MF
fC = 2 kHz

30
25
20
15
10
5
0
25

50

75

100

125

150

TC (°C)

Allowable Effective Current (Arms)

Figure 15-62.

Allowable Effective Current (fC = 2 kHz): 30 A Devices
fC = 16 kHz

30
25
20
15
10
5
0
25

50

75

100

125

150

TC (°C)
Figure 15-63.

Allowable Effective Current (fC = 16 kHz): 30 A Devices

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201549

SCM1200MF Series
15.5. Short Circuit SOAs (Safe Operating Areas)
Conditions: VDC ≤ 400 V, 13.5 V ≤ VCC ≤ 16.5 V, TJ = 125 °C, 1 pulse.

15.5.1. SCM1261MF

Collector Current, IC(PEAK) (A)

200

150

100

Short Circuit SOA

50

0
0

1

2

3

4

5

3

4

5

Pulse Width (µs)

15.5.2. SCM1242MF, SCM1263MF

Collector Current, IC(PEAK) (A)

250

200

150

100
Short Circuit SOA
50

0
0

1

2
Pulse Width (µs)

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

50

SCM1200MF Series
15.5.3. SCM1265MF
300

Collector Current, IC(PEAK) (A)

250
200
150
100

Short Circuit SOA

50
0
0

1

2

3

4

5

3

4

5

Pulse Width (µs)

15.5.4. SCM1256MF
400

Collector Current, IC(PEAK) (A)

350
300
250
200
150
Short Circuit SOA
100
50
0
0

1

2
Pulse Width (µs)

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

51

SCM1200MF Series
16. Pattern Layout Example
This section contains the schematic diagrams of a PCB pattern layout example using an SCM1200MF series
device. For reference terminal hole sizes, see Section 10.3.

Figure 16-1.

Top View

Figure 16-2.

Bottom View

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201552

SCM1200MF Series

LS1
1

R4

33

FO1

2 OCP1C20

3 LIN1

4 COM1U 32

5 HIN1
6 VCC1

C17
C14

31

VB1
8 HS1
7

C1
9

FO2

LS230

10 OCP2
11 LIN2

12 COM2

1 U
2 V
3 W

V
29

13 HIN2
14 VCC2

SV4

C18
C15

FO 1
5V 2
LIN1 3
HIN1 4
LIN2 5
HIN2 6
LIN3 7
HIN3 8VCC 9COM 10

R5
R6
R7
R8
R9
R10

C2
17

LS3

27

FO3

18 OCP3
19 LIN3

20 COM3

W26

21 HIN3

22 VCC3

C19

VBB

C5
C6
C7
C8
C9
C10

C16

D5

25

1 VBB

VB3
24 HS323

2 PGND

C3

SV3

1

C4
D4

Figure 16-3.

D1
C23
R14
R1

SV1

C11
C12/RT
C13

4

D2
C24
R15
R2

3

C21

R13
R12
R11

2

D3
C25
R16
R3

SV2

NC
OCP1
OCP2
OCP3

28

VB2
16 HS215

Circuit Diagram of PCB Pattern Layout Example

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2015

53

SCM1200MF Series
17. Typical Motor Driver Application
This section contains the information on the typical motor driver application listed in the previous section, including
a circuit diagram, specifications, and the bill of the materials used.
● Motor Driver Specifications
IC
Main Supply Voltage, VDC
Output Power Rating

SCM1242MF
300 VDC (typ.)1.35 kW● Circuit Diagram
See Figure 16-3.
● Bill of Materials
Symbol
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12/RT
C13
C14
C15
C16
C17
C18
C19
C20
C21
C22*
C23*
C24*
C25

Part TypeElectrolytic
Electrolytic
Electrolytic
Electrolytic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Ceramic
Film
Ceramic
Ceramic
Ceramic
Ceramic

Ratings
47 μF, 50 V
47 μF, 50 V
47 μF, 50 V
100 μF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
100 pF, 50 V
2200 pF, 50 V
2200 pF, 50 V
2200 pF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
0.01 μF, 50 V
0.1 μF, 630 V
0.1 μF, 50 V
0.1 μF, 50 V
0.1 μF, 50 V
Open

SymbolPart Type
Ratings
R1*
Metal plate
27 mΩ, 2 W
R2*Metal plate
27 mΩ, 2 W
R3*Metal plate
27 mΩ, 2 W
R4General
4.7 kΩ, 1/8 W
R5General
100 Ω, 1/8 W
R6General
100 Ω, 1/8 W
R7General
100 Ω, 1/8 W
R8General
100 Ω, 1/8 W
R9General
100 Ω, 1/8 W
R10General
100 Ω, 1/8 W
R11General
100 Ω, 1/8 W
R12General
100 Ω, 1/8 W
R13General
100 Ω, 1/8 W
R14*GeneralOpen
R15*
GeneralOpen
R16*
GeneralOpen
D1
General
1 A, 50 V
D2General
1 A, 50 V
D3General
1 A, 50 V
D4
Zener
VZ = 20 V, 0.5 W
D5GeneralOpen
SV1
Pin header
Equiv. to MA04-1
SV2
Pin header
Equiv. to MA10-1
SV3
Connector
Equiv. to B2P3-VH
SV4Connector
Equiv. to B3P5-VH
IPM1IC
SCM1242MF* Refers to a part that requires adjustment based on operation performance in an actual application.

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
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54

SCM1200MF Series
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from any possible errors or omissions in connection with the Information.
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● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s).

DSGN-CEZ-16003

SCM1200MF-DSE Rev.2.4
SANKEN ELECTRIC CO., LTD.
Sep. 29, 2023
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201555