金沢工業大学附置研究所

光電相互変換デバイスシステム研究開発センター

研究所年報
VOL. ２０

April 1, 2019～March 31, 2020

ANNUAL RESEARCH REPORTOPTOELECTRONIC DEVICE SYSTEM R&D CENTER
KANAZAWA INSTITUTE OF TECHNOLOGY

目

次
頁

研究成果報告書刊行にあたって・・・・・・・・・・

1

研究スタッフ・・・・・・・・・・・・・・・・・・

3

各研究テーマの概要・・・・・・・・・・・・・・・

4

予算・・・・・・・・・・・・・・・・・・・・・・

8

委員会活動等・・・・・・・・・・・・・・・・・・

9

教育活動・・・・・・・・・・・・・・・・・・・・

11

研究活動・・・・・・・・・・・・・・・・・・・・

12

1. 発表論文
2. 国際会議・シンポジウム講演
3. 受賞・新聞発表等
出願特許リスト・・・・・・・・・・・・・・・・・

14

研究成果報告書刊行にあたって
光電相互変換デバイスシステム研究開発センター
所長 山口 敦史
金沢工業大学「光電相互変換デバイスシステム研究開発センター」での令和元年度（平成３１年４月－令和２年３月）における研究成果を、ここに報告書として取りまとめましたので、謹んでお届け申し上げます。
当研究開発センターは、平成１２年度の文部省（現文部科学省）の私立大学ハイテ
ク･リサーチ･センター整備事業（研究期間５年）に選定され、金沢工業大学の附置研究所として設立されました。当センターは、エレクトロニクス分野のインテグレーシ
ョン技術が生み出すデバイスシステムの研究開発を目的として、昭和５９年に開設した電子デバイスシステム研究所を母体として、開設以来１５年の間に最重点研究領域として成長した光電相互変換デバイスシステム開発に集中・特化し、組織の再編と施設の強化を図り革新的に発展させたものであります。専用研究棟（４０号館）を金沢
工業大学野々市キャンパス内に新築し、既設設備の移設や新規設備の搬入を終え、平成１３年３月から［酸化物半導体の価電子制御と高導電率化およびデバイスへの応用］及び［次世代電子ディスプレイシステムの開発］２つの研究プロジェクトが本格的に活動を開始しました。平成１６年３月に両プロジェクトの成果を報告書としてまとめて報告し終了しました。引き続き、平成１７年度の私立大学学術研究高度化促進事業（研究期間３年）に選定され、「環境調和型光電相互変換デバイス技術の確立とその応用」並びに「環境調和型電子ディスプレイシステムの開発」の２つのプロジェクトを実施し、平成２０年３月に両プロジェクトの成果を報告書としてまとめて報告
し終了しました。また，平成２３年度の「私立大学戦略的研究基盤形成支援事業」に選定され、設立された電気・光・エネルギー応用研究センターに所属して光・電子デバイスシステムの開発研究を実施しています。平成２９年３月末に、研究所設立時より長期に渡り所長を務めてこられた南教授が所長を退任され、平成２９年４月より山口敦史が所長の職を引き継いでおります。
本報告をご覧くださる諸賢のご忠告やご助言をお願いする次第であります。今後とも皆様方のご理解とご支援を心からお願い申し上げます。
終わりにあたり、本センターの研究に対し、種々のご支援・ご協力を頂いた関係機
関、並びに委託研究や奨学寄付金を提供して頂いた多くの民間企業各社に対し、深く感謝申し上げます。
令和２年３月−1−

FORWARD
This research report is issued annually to summarize the research activities in the
Optoelectronic Device System Research and Development (OEDS R&D) Center, Kanazawa
Institute of Technology (KIT). This report, which covers the activities in the OEDS R&D
Center from April 2019 to March 2020, is distributed to researchers engaged in the study ofmaterials, devices and systems in the field of electronics, especially optoelectronics, in orderto stimulate mutual exchange of scientific information. We believe that this report represents
our continuing commitment toward achieving and maintaining research excellence in the areaof materials, devices and systems for optoelectronics.
Historically, the Electron Device System (EDS) Research Laboratory was established at
KIT in June 1984. Professor Ichiro Fukuda was installed as the first director of the EDS
Research Laboratory. Since the establishment of the EDS Research Laboratory, research has
centered on fundamental studies of materials, devices and systems as well as on technology tointegrate them into electronic devices. In the past 15 years, optoelectronic device system
research has grown into a major research field. For the purpose of focusing on thedevelopment of optoelectronic device systems, the EDS Research Laboratory wastransformed into the OEDS R&D Center attached to KIT in May 2000 with a regrouping of
the staff and construction of a new building (building 40). The OEDS R&D Center was
financially supported in part by a High-Tech Research Center Project Grant from the Ministryof Education, Culture, Sports, Science and Technology of Japan, and Professor Tadatsugu
Minami was appointed the first director of the OEDS R&D Center. There are two importantresearch projects in the OEDS R&D Center: the development of 1) Oxide Electronics and 2)
Next Generation Electronic Display Systems. We are extensively investigating new n- andp-type oxide semiconductors for optoelectronic devices, new oxide phosphors for emissive
displays, new optoelectronic devices and new display systems. These research projects weresuccessfully finished in March 2008.
After that, we have jointed a new research project in the Center for Electric, Optic andEnergy Applications attached to KIT and started in April 2011: Research and development of
optoelectronic device systems. A part of our works was financially supported by a Program
for the Strategic Research Foundation at Private Universities from the Ministry of Education,
Culture, Sports, Science and Technology of Japan. In 2017, Professor Minami, who served as
director for a long term since the establishment of the center, retired from the position of
director, and Professor Atsushi A. Yamaguchi has taken over the position.
All of us at the OEDS R&D Center are grateful for the generosity and continuing supportof the organizations and companies which have been providing research funds.
Atsushi A. Yamaguchi, Director
Optoelectronic Device System R & D Center
March 2020−2−

研究スタッフ
光電相互変換デバイスシステム研究開発センターは、新しい光電相互
変換デバイスの開発を目的として、7 名の研究員体制で平成 12 年度から研究開発を開始した。その後、石井 恂 教授、得永嘉昭 教授及び福田一郎 教授が退職され、平成 23 年度に山口敦史 教授を、平成 30 年度には
平間淳司 教授、柳橋秀幸 講師を新たに迎え、所長を含む以下の計 7 名の所員が研究テーマを分担して研究開発を行っている。

令和元年度研究所組織
・研究所員
所長
所員
所員
所員
所員
所員
所員

山口敦史
宮田俊弘
坂本康正
平間淳司
深田晴己
柳橋秀幸
南 内嗣

教授・理学博士
教授・博士（工学）
教授・工学博士
教授・工学博士
准教授・博士（工学）講師・博士（工学）
教授・工学博士−3−

各研究テーマの概要
山口研究室 (Yamaguchi Laboratory)
Optical Properties of III-nitride materials and devices are investigated both experimentallyand theoretically. The following two topics are intensively being studied at present.
[1] Optical Gain Characteristics of InGaN Green-Emitting Laser Diodes
We theoretically predicted in 2006 that the utilization of semi polar GaN substrates isbeneficial to realize high-performance and low-cost green laser diodes. Now, we are
performing more realistic calculation of optical gain characteristics to design the device
structure in detail. In addition, experimental studies have just been launched to measure theanisotropic optical gain characteristics of semipolar-oriented InGaN quantum wells.
[2] Optical Characterization of GaN Substrates for High-Efficient White LEDs
High quality GaN substrates with low defect density and small residual strain are requiredfor high-efficient white LEDs. We are measuring time-resolved photoluminescence spectra toelucidate defect density and to investigate carrier dynamics. 2D-strain mapping measurements
by low-temperature micro-reflectance are also being carried out to understand the strain
relaxation mechanism and to reduce the residual strain in the substrates.

宮田研究室 (Miyata Laboratories)
We are extensively investigating new n- and p-type oxide semiconductors for
optoelectronic devices, new oxide phosphors for emissive displays, new optoelectronic
devices and new display systems. A new research project was started in May 2007:
Development of indium substitute materials for a transparent conducting electrode. This
research was financially supported in part by the Rare Metal Substitute Materials
Development Project initiated by the Ministry of Economy, Trade and Industry of Japan andtransferred to the New Energy Development Organization from April 2008; the research
project was completed successfully in March 2009. A new research project was started inAugust 2010: Development of low cost and high quality transparent conducting oxide (TCO)
films by sputtering deposition. The research was financially supported in part by the New
Energy and Industrial Technology Development Organization (NEDO), Japan, via the
Photovoltaic Power Generation Technology Research Association (PVTEC), Japan; theresearch project was finished successfully in March 2013.
[1] Preparation and device application of intelligent oxide thin films.
Highly conductive and transparent thin films have many applications such as transparent
electrodes for optoelectronic devices and transparent heat mirrors for solar energy utilization.

−4−

Although indium tin oxide (ITO) films are in practical use, ITO is a relatively expensive
material because indium is in rather limited supply. We have proposed use of new transparent
conducting oxide (TCO) materials, consisting of ZnO and multicomponent oxide. Especially,
the following subjects are in progress:
1) Development of new TCO materials and its deposition techniques.
2) Development of new p-type oxide semiconductors and its deposition technique.
3) Development of optoelectronic devices using new oxide semiconductors.
4) Development of sensor and MEMS using new oxide semiconductors.
[2] Photovoltaic application of oxide semiconductors.
We have proposed new p–n heterojunction solar cells have been fabricated using cuprous
oxide (Cu2O), a semiconductor with a direct energy gap of 2.1 eV. The significantly enhanced
efficiencies could be achieved in Al-doped ZnO (AZO)/n-type semiconductor/p-type Cu2O
heterojunction solar cells fabricated by preparing an oxide semiconductor thin film on athermally oxidized p-Cu2O sheet using low-damage and low-temperature deposition
techniques. The following subjects are in progress:
1) Development of new oxide semiconductor thin films materials as an n-type layer and its
deposition techniques.
2) The Cu2O homojunction was formed by epitaxially growing an impurity-doped Cu2O thinfilm on thermally oxidized polycrystalline p-type sodium-doped Cu2O sheets byelectrochemical deposition (ECD) method.

坂本研究室 (Sakamoto Laboratory)[1] Three-dimensional Display Using Light Emitting Diode
The purpose of this research is to develop a system to make display with athree-dimensional image that was overflowed in the sensation of reality. We arranged Light
Emitting Diode (LED) three-dimensionally for this purpose.
Our goal is to make a big screen and then attempt to reduce the cost.
[2] The Driving Circuits of LED-lightWith the developments of luminous efficiency of LED, popularization of LED lamps isto be expected. Therefore, as well as luminous efficiency, increasing efficiency of lighting
circuit is important from the point of view of consideration the efficiency of an entire of thelighting system. In response to this requirement, the following studies are being conducted.
1) Development of the new rush current suppressor which uses a solid state relay2) Development of the high efficiency lighting circuit of LED lamp.

−5−

平間研究室 (Hirama Laboratory)［1］New SPA based (wasabi) plant factory with optimally controlled cultivation environment
utilizing the leaf electric potential
For plants that are considered difficult to grow in plant factories (wasabi), a controlled
cultivation environment that was created with IoT based sensor and actuator networks andcloud management was implemented early on.
By analyzing the weak leaf electric potentials from the wasabi when exposed to external
environmental stimuli, a “health check” on the wasabi is performed. In addition to growthenvironmental control based on other biometric SPA (Speaking Plant Approach) measurement
techniques, continuous health monitoring of the wasabi using the leaf electric potential data isalso obtained in order to further optimize the cultivation environmental control.
[2] Small scale low magnetic field MRI device development
In this laboratory, a low magnetic field small scale MRI device is under development. It is
intended to be used for medical diagnostics immediately after brain surgery. This high quality
light weight MRI system is being implemented in collaboration with the Applied Electronics
laboratory (AEL) using technology and techniques developed at KIT.
In addition, a low magnetic field 52mT MRI system is also being developed mainly toanalyze the internal makeup of food by measuring the relaxation time from MR images.
[3] Small scale high sensitivity FGM development
A small sized magnetic sensor (Fluxgate Magnetometer: FGM) with highly sensitive
magnetic saturation characteristics that can operate at room temperature was developed. Up
until now, an ultra-high sensitivity of 30pT/√Hz was achieved. The focus of the research fromnow is to rebuild and reduce the size of the sensor body while simplifying the magnetic
detection circuit.

深田研究室 (Fukada Laboratory)[1] Development of thin film phosphor materials
Our objective is the development of thin film phosphors with high efficiency and chemical
stability for inorganic thin-film electroluminescence devices and white light-emitting diodes.
Various phosphor thin films are prepared by a sol-gel dip coating followed by post annealing
at a high temperature. In addition, we will conduct studies on inorganic-organic hybrid
phosphors and luminescent devices utilizing these phosphors.
[2] First-principles molecular-dynamics calculations
The first-principles molecular-dynamics simulation is an effective method of explaining−6−and predicting various properties of semiconductors and metals though electron-statecalculations based on quantum dynamics. Aiming at the improvement of the experimental
conditions in the preparation of inorganic or organic semiconductors and/or the developmentof new optoelectronic devices, we will conduct exploring and predicting physical phenomenaon the atomic and electronic levels.

柳橋研究室 (Yanagibashi Laboratory)[1] Development of SPA typed mushroom factory
The final goal of our study is actual operation of SPA (Speaking Plant Approach) typed
mushroom factory. SPA means environmental control using some biological information as
index. In this study, bioelectric potential responses of mushrooms to various environmental
factors have been measured and associated with their morphogenetic properties. Mushroom
growth promotion by bioelectric potential activation has also been tried and it is gradually
becoming clear that bioelectric potential is effective as an index of growth control.
[2] Contactless measurement of plant physiological activity using magnetic fluid
This study is the world’s first trial aiming to realize a quite new method to measure plant
physiological activity without physical contact of sensors. It is considered that nano particle
sized magnetic fluid is absorbed into the plant body and its movement by solution transport
related to plant physiological activity will result in extremely weak magnetic fluctuations that
seems to be detectable without contact by FGM. In the future, we will also work on theapplication of this measurement technology on medical scene.

−7−

予 算

（非公開)

−8−

委員会活動等機

関委員会等の名称

参加者

備

産学協力研究委員会（ワイドキャップ半導体光・電子デバイス第１６２委員会）

山口

研究会
企画幹事

応用物理学会 応用電子物性分科会

山口

企画幹事

応用物理学会 論文誌企画・編集委員会

山口

JJAP 編 集 委員

電子情報通信学会 レーザ・量子エレクトロニクス研究専
門委員会

山口

専門委員

2019 年度応用物理学会 論文賞委員会

山口委員

2019 年度応用物理学会 化合物半導体エレクトロニクス
業績賞（赤﨑勇賞）表彰委員会

山口委員

The 14th International Conference on Nitride
Semiconductors (ICNS-14), Program Committee

山口

副委員長

The
9th
Asia-PacificWorkshopon
Wide-gap
Semiconductors (APWS 2019), Steering Committee

山口

委員（財務）

半導体レーザ国際会議(ISLC 2020) Technical Program
Committee

山口委員International Workshop on Nitride Semiconductors (IWN
2020) Local Arrangement Committee

山口委員

日本学術振興会

日本学術振興会

産学協力研究委員会（光電相互第１２５委員会)

南委員

日本学術振興会

産学協力研究委員会（透明酸化物光･電子材料
第１６６委員会）

南委員

日本学術振興会

産学協力研究委員会（光電相互第１２５委員会)

宮田

委員

日本学術振興会

産学協力研究委員会（透明酸化物光･電子材料
第１６６委員会）

宮田

委員

−9−

考

機

関

委員会等の名称

参加者

備

石川県工業試験場

工業試験場研究外部評価委員会

坂本

委員

電気学会

電子回路の教育プログラム調査
専門委員会

坂本

委員

映像情報ﾒﾃﾞｨｱ学会

北陸支部

坂本

評議員

日本生物環境工学会

本会

平間

副会長

日本生物環境工学会

本会

平間

理事

日本生物環境工学会

本会

平間

監事

日本生物環境工学会

全自動植物工場部会

平間部会長

日本生物環境工学会

北信越支部

平間

支部長

株式会社 イーグル
テクノロジー

平間

技術顧問

応用物理学会北陸・信越支部 第 5 回有機・無機エレク
トロニクスシンポジウム

深田

現地委員

日本生物環境工学会

本会

柳橋

理事

日本生物環境工学会

本会

柳橋

和文誌編集
委員

日本生物環境工学会

北信越支部

柳橋

役員

− 10 −

考（非公開)− 11 −

研究活動
1．発表論文＜査読あり＞
1) S. Kusanagi, Y. Kanitani, Y. Kudo, K. Tasai, A. A. Yamaguchi, and S. Tomiya, “InGaN
quantum wells with improved photoluminescence properties through strain-controlled
modification of the InGaN underlayer”, Japanese Journal of Applied Physics, Vol. 58,
SCCB28-1~5 (2019).
2)

T. Miyata, H. Tokunaga, K. Watanabe, N. Ikenaga, and T. Minami, “Photovoltaic
properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet
heterojunction solar cells”, Thin Solid Films 697, pp.137825-1-5, (2020).

2． 国際学会、シンポジウム講演
1) K. Mori, Y. Takahashi, A. A. Yamaguchi, Y. Kanitani, Y. Kudo, S. Tomiya,“Measurements of IQE in Various InGaN SQWs with Different Qualities by
Simultaneous Photoacoustic and Photoluminescence”, The 13th International Conferenceon Nitride Semiconductors 2019 (ICNS-13), Bellevue, USA (2019).
2) T. Fujita, S. Sakai, Y. Ikeda, A. A. Yamaguchi, Y. Kanitani, and S. Tomiya, “Experimental
Studies and Model Analysis on Potential Fluctuation n InGaN Quantum-Well Layers”
2019 International Conference on Solid State Devices and Materials (SSDM 2019),
Nagoya, Japan (2019).
3) T. Fujita, S. Sakai, Y. Ikeda, A. A. Yamaguchi, S. Kusanagi, Y. Kanitani, Y. Kudo and S.
Tomiya, “Experimental Studies and Model Analysis on Potential Fluctuation in InGaN
Quantum-Well Layers”, The 38th Electronic Materials Symposium (EMS-38), Kashihara,
Japan (2019).
4) K. Mori, Y. Takahashi, A. A. Yamaguchi, S. Kusanagi, Y. Kanitani, Y. Kudo and S.
Tomiya, “Measurements of Internal Quantum Efficiency in Various InGaN Single
Quantum Wells with Different Qualities by Simultaneous Photoacoustic and
Photoluminescence Spectroscopy”, The 38th Electronic Materials Symposium (EMS-38),
Kashihara, Japan (2019).
5) 藤田貴志、坂井繁太、池田優真、山口敦史、草薙進、蟹谷裕也、工藤喜弘、冨谷
茂隆、“InGaN 量子井戸 における Mobility edge の見積り方法に 関する実験的・理論的検討”, 電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）, 浜
松, (2019).
6) 森恵人、高橋佑知、森本悠也、山口敦史、草薙進、蟹谷裕也、工藤喜弘、冨谷茂
隆、“光音響・発光同時計測による InGaN 量子井戸の内部量子効率 の推定”, 電
子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）, 浜松, (2019).

− 12 −

7) 山口敦史: （招待講演）“光学的評価の基礎と実践”, 応用物理学会結晶工学分科会
主催第25回結晶工学スクール, 吹田市, (2019).
8) 山口敦史: （招待講演）“光音響・発光同時計測法による内部量子効率測定”, 応用物理学会結晶工学分科会主催第２４回結晶工学セミナー「ワイドギャップ半導体
結晶の評価とプロセス技術 －評価／プロセスからマテリアルの本質に迫る－」,東京, (2019).
9) 藤田貴志、坂井繁太、池田優真、山口敦史、草薙進、蟹谷裕也、工藤喜弘、冨谷
茂隆：“InGaN 量子井戸の Mobility edge の見積り方法に関する実験的・理論的検討”，応用物理学会結晶工学分科会・電子材料若手交流会(ISYSE) 共催第 2 回結晶工学×ISYSE 合同研究会，東京, (2019).
10) 森恵人、高橋佑知、森本悠也、山口敦史、草薙進、蟹谷裕也、工藤喜弘、冨谷茂
隆：“光音響・発光同時計測による InGaN 量子井戸の内部量子効率の推定”，応用物理学会結晶工学分科会・電子材料若手交流会(ISYSE) 共催第 2 回結晶工学×
ISYSE 合同研究会，東京, (2019).
11) T．Miyata, H. Tokunaga, and T．Minami, (INVITED)“Photovoltaic properties of
Cu2O-based heterojunction solar cells using binary oxide semiconductor thin films as an-type layer prepared by low damage magnetron sputtering method”, International
Conference on Small Science (ICSS) 2019, Hawaii, USA (2019).
12) T．Miyata, H. Tokunaga, and T．Minami, (INVITED)“High conversion efficiency
Cu2O-based heterojunction solar cells using multicomponent n-type oxide semiconductor
thin films prepared by low damage magnetron sputtering method”, 12th International
Conference on Optics Photonics and Lasers (Euro Optics), London, UK (2019).
13) T．Miyata, J. Yamazaki, H. Tokunaga, and T．Minami, (INVITED) “Ozone gas sensors
with high sensitivity using polycrystalline p-type Cu2O sheets”, CCAM & 3D-Printing
Collaborative Conference on Advanced Material, St. Julian’s, Malta (2019).
14) H. Tokunaga, T. Miyata, and T. Minami, “Photovoltaic properties of Cu2O-based
heterojunction solar cells using various n-type oxide semiconductor thin films preparedby low-damage magnetron sputtering method”, 11th International Symposium on
Transparent Oxide and Related Materials for Electronics and Optics (TOEO-11), Nara,
Japan (2019).
15) 平間淳司：“本学17号館設置のIoT・ICT活用による小規模ワサビ工場”，第9回賀戸久先生記念研究会，金沢, (2019).
16) 柳橋秀幸：“磁性流体を利用した非接触での植物生理活性評価の試み”，第9回賀戸久先生記念研究会，金沢, (2019).

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3. 受賞・新聞発表等
1) 清水渓佑、井上大雅、伊藤陽亮、加藤啓佑、柳橋秀幸、平間淳司：日本生物環境工学会中部支部大会優秀発表賞「茸の生体電位信号のコンピュータ解析に関する新たな試み」，令和元年 11 月 30 日，名古屋女子大学

2) 平間淳司：日本生物環境工学会感謝状「大会長賞」，令和元年 11 月 30 日，名古屋女子大学

出願特許リスト
1) 発明者：南 内嗣、宮田俊弘、西 祐希
発明の名称：光電変換素子、タンデム型光電変換素子および光充電型バッテリー装置
登録番号：特許第 6608257 号
登録日：令和 1 年 11 月 1 日

2) 発明者：南 内嗣、宮田俊弘、西 祐希
発明の名称：活性層の製造方法、および光電変換素子
登録番号：特許第 6650640 号
登録日：令和 2 年 1 月 23 日

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光電相互変換デバイスシステム研究開発センター
令和元年度 研究所年報 第２０巻
令和２年６月 発行

OPTOELECTRONIC DEVICE SYSTEM R&D CENTER
Annual Research Report Vol.20
April 1, 2019 ～ March 31, 2020

発行 者： 金沢工業大学 光電相互変換デバイスシステム研究開発センター〒921-8501

石川県野々市市扇が丘 7-1 TEL：076-248-1100

Publisher： Kanazawa Institute of Technology
Optoelectronic Device System Research and Development Center
7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501− 15 −

TEL：+81 76-248-1100