6A895

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Silicon PNP transistor epitaxial type
6A895
[ Applications ]DC/DC converters, Supply line switching, Battery charger, LCD backlighting[ Feature ]High DC gain hFE= 200-450 at VCE= -2V, IC= -1A
Low collector saturation voltage VCE(sat)= -390mV (Max.) at IC= -3A, IB= -0.3A[ Absolute maximum ratings (Ta=25C) ]Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)Collector current (Pulse)
Junction temperature
Storage temperature

Symbol Maximum ratings
VCBO-50
VCEO-50VEBO-5IC-3
ICP-5Tj150
Tstg-55 to 150

UnitVVVAACC[ Electrical characteristics (Ta=25C) ]Characteristic
SymbolCollector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Collector cut-off current
ICES
Emitter cut-off current
IEBO
DC current gain 1
hFE 1
DC current gain 2
hFE 2
DC current gain 3
hFE 3
DC current gain 4
hFE 4
DC current gain 4
hFE 5
Collector-emitter saturation voltage 1
Collector-emitter saturation voltage 2
Collector-emitter saturation voltage 3
Collector-emitter saturation voltage 4
Collector-emitter saturation voltage 5

VCE(sat) 1

Base-emitter saturation voltage 1
Base-emitter saturation voltage 2
Base-emitter on voltage
Transition frequency
Collector output capacitance

VBE(sat) 1

VCE(sat) 2
VCE(sat) 3
VCE(sat) 4
VCE(sat) 5
VBE(sat) 2

VBE(on)
fT
Cob

Min.
-50-50-520020020013080100-Typ.
-Max.
-100-100-100
450-90-180-320-270-390
-1.1
-1.2
-1.1
35UnitVVVnAnAnAmVmVmVmVmVV
V
VMHz
pF

Conditions
IC= -100uA, IE= 0A
IC= -10mA, IB= 0A
IE= -100uA, IC= 0A
VCB= -50V, IE= 0A
VCES= -50V
VEB= -5V, IC= 0A
VCE= -2V, IC= -0.1A
VCE= -2V, IC= -0.5A
VCE= -2V, IC= -1A
VCE= -2V, IC= -2A
VCE= -2V, IC= -3A
IC= -0.5A, IB= -50mA
IC= -1A, IB= -50mA
IC= -2A, IB= -0.1A
IC= -2A, IB= -0.2A
IC= -3A, IB= -0.3A
IC= -2A, IB= -0.1A
IC= -3A, IB= -0.3A
VCE= -2V, IC= -1A
VCE= -5V, IE= 0.1A
VCB= -10V, f= 1MHz, IE= 0A

Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.

PHENITEC SEMICONDUCTOR Corp.

No. 6A895-20190827- 1/2 -6A895

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Fig.1 IC - VBE(on)at VCE= -2V,Ta= 25C

Fig.2 hFE - IC
at VCE= -2V, Ta= 25C

10Fig.3 VCE(sat) - IC
at IC/IB= 10, Ta= 25C

0.10.01100

100.001

0.001
0.5

10.001100.010.1

110

Fig.4 VCE(sat) - IC
at IC/IB= 20, Ta= 25C

Fig.5 VBE(sat) - IC
at IC/IB= 10, Ta= 25C

Fig.6 VBE(sat) - IC
at IC/IB= 20, Ta= 25C
100.01

0.1

1

10.1
0.001

10

Base-emitter saturation
voltage : -VBE(sat) (V)10
Base-emitter saturation
voltage : -VBE(sat) (V)Collector current : -IC (A)

0.01
0.1
1
10
Collector current : -IC (A)Fig.7 fT - IE
at VCE= -5V, Ta= 25C

Fig.8 Cob - VCB
at f= 1MHz, Ta= 25C

Collector output
capacitance : Cob (pF)Transition frequency: fT (MHz)

100

100.1
0.001

0.010.1

110Collector current : -IC (A)Fig.9 Cib - VEB
at f= 1MHz, Ta= 25C

1000

100

100.010.1
1Emitter current : IE (A)1

Collector input
capacitance : Cib (pF)Collector-emitter saturation
voltage : -VCE(sat) (mV)1Collector current : -IC (A)100

10.001

0.1

10Collector current : -IC (A)100100.001

0.01

1000.70.9
1.1
Base-emitter on voltage: -VBE(on) (V)

1000

1000

1000

Collector-emitter saturation
voltage : -VCE(sat) (mV)

1DC current gain : hFE

Collector current : -IC (A)

1000

0.1
1
10
100
Collector-base voltage : -VCB (V)0190827
PHENITEC SEMICONDUCTOR Corp.

0.1

1
10
Emitter-base voltage : -VEB (V)No. 6A895-20190827- 2/2 -