AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGYHSTDR 300-000, HSTDR 400-000, HSTDR 600-000, HSTDR 900-000, HSTDR 1000-000, HSTDR 1200-000,
HSTDR 1300-000, HSTDR 1500-000

Introduction

Principle of HSTDR-000 family

The HSTDR-000 family is a transducer for DC, AC, or
pulsed currents measurement in high power and low voltage
automotive applications. It offers a galvanic separation
between the primary circuit (high power) and the secondary
circuit (electronic circuit).
The HSTDR-000 family gives you a choice of having different
current measuring ranges in the same housing (from ±300 A up
to ±1500 A).

The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hall
voltage, is generated by the primary current IP to be measured.
The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportionalto:
B (IP) = a × IP

Features

The Hall voltage is thus expressed by:● Open Loop transducer using the Hall effect sensor● High insulation level● Unipolar +5 V DC power supply● Primary current measuring range up to ±1500 A● Maximum RMS primary admissible current: defined by thebusbar, the magnetic core or ASIC T < +150 °C

UHall = (cHall / d) × IHall × a × IP
Except for IP, all terms of this equation are constant.
Therefore:
UHall = b × IPaconstant● Operating temperature range: −40 °C < T < +125 °Cbconstant● Output voltage: fully ratio-metric (in sensitivity and offset).

cHall

Hall coefficientdthickness of the Hall plate

IHall

current across the Hall plates

Advantages● Excellent accuracy● Very good linearity● Very low thermal offset drift

The measurement signal UHall amplified to supply the user
output voltage or current.

● Very low thermal sensitivity drift● High frequency bandwith+ UC● No insertion losses

IP● Very fast delay time.

Uout
- UC

Automotive applications
Primary Current IP● Starter Generators

0V

Insulated Output Voltage Uout

● Inverters● HEV applications

Fig. 1: Principle of the open loop transducer.

● EV applications● DC / DC converters● DC link.

N° 97.X5.46.000.0, N° 97.X5.48.000.0, N° 97.X5.52.000.0, N° 97.X5.58.000.0, N° 97.X5.60.000.0, N° 97.X5.62.000.0, N° 97.X5.63.000.0, N° 97.X5.65.000.0
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HSTDR XXX-000

Dimensions (in mm)

Mechanical characteristics

Remark● Plastic case

PPS

● Uout > UO when IP flows in the positive direction (see arrow on drawing).

● Pins		Tin plated● Mass		

27 g ±5 %● Busbar

Copper, Ni plating

Electronic recommendation● Mating connector: Molex duraclik 4 pin:
- Housing 4W white: 5601230400

UC

+5 V

IP M

Mounting recommendation

Typical application

LEM Transducer

47 nF

C1

Primary
Current

Uout

R
CL

C2

- Retainer 4W grey: 5601250400+5 V

Shematic interface

RL

C

Magnetic Core

GND

- Terminal tin plated: 5601240101● Assembly torque: M5 screw with 3.5 N·m ±10 %The clamping force must be applied to the compression
limiter, washer recommended.

RL > 10 kΩ optional resistor for signal line diagnostic (optional)
CL < 2.2 nF EMC protection (optional)
RC: low pass filter (optional)

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HSTDR XXX-000

Absolute ratings (not operating)Parameter

SymbolUnit

Min

Specification
TypicalMax

0
Maximum supply voltage

UC maxV

Ambient storage temperature

TA st

°C

Electrostatic discharge voltage (HBM - Human
UESD HBM
Body Model)−40

Conditions

8

Continuous, not operating

6.5

Exceeding this voltage may temporarily
reconfigure the circuit until UC comes backto 5 V

125

kV

8
4.7

RMS voltage for AC insulation test

UdkV

Creepage distance

dCp

mm

16.5

Clearance

dCI

mm

9.5

Comparative tracking index

CTI

-

PLC3

Maximum output current

Iout max

mA

−10

10

Maximum output voltage

Uout maxV−0.5

UC + 0.5

Insulation resistance

RINS

MΩ

500

50 Hz, 1 min, IEC 60664 part1

500 V DC

Operating characteristics in nominal range (IP N)
Parameter

SymbolUnit

Min

Electrical Data

Specification
TypicalMax
5

Conditions

Supply voltage

UC

V

4.75

5.25

Ambient operating temperature

TA

°C

−40

Load capacitanceCLnF

Output voltage (Analog) 1)

Uout

V

Uout = (UC/ 5) × (UO + S × IP )Offset voltage

UO

V

2.5

@ UC = 5 V

Current consumption

IC

mA

15

@ UC = 5 V, @ TA = 25 °C

Load resistanceRLΚΩ

Output internal resistance

Rout

Ω

Ratiometricity error

εr

%

±0.3

@ TA = 25 °C

Sensitivity error

εS

%

±1

@ TA = 25 °C, @ UC = 5 V

Electrical offset voltage

UO E

mV

±4

@ TA = 25 °C, @ UC = 5 V

Magnetic offset voltage

UO M

mV

±2

@ TA = 25 °C, @ UC = 5 V

Average temperature coefficient of UO E

TCUO E AV

mV/°C

−0.08

±0.04

0.08

@ −40 °C < TA < 125 °C

Average temperature coefficient of S

TCSAV

%/°C

−0.03

±0.01

0.03

@ −40 °C < TA < 125 °C

Linearity errorεL% IP M±1

Delay time to 90 % of the final output value for
IP N step

tD 90

µs

2

Frequency bandwidth 2)

BW

kHz

Peak-to-peak noise voltage

Uno ppmV

9@ DC to 1 MHz for HSTDR 1500-000

Peak-to-peak noise voltage

Uno ppmV

22@ DC to 1 MHz for HSTDR 300-000

Phase shift

∆φ

°

125
2.2
@ UC

10
10

DC to 1 KHz

Performance Data

Notes:

1)

40@ UC = 5 V, @ TA = 25 °C, @ IP = IP M

6

di/dt = 100 A /µs@ −3 dB−4@ 1 kHzThe output voltage Uout is fully ratiometric. The offset and sensitivity are dependent on the supply voltage UC relative to the following formula:
 5
 1
× U out − U O  × with S in (V/A)
IP = 
 UC
 S

2)

		

Primary current frequencies must be limited in order to avoid excessive heating of the busbar, magnetic core and the ASIC.
(see feature paragraph in page 1/9).

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HSTDR XXX-000

HSTDR 300-000
Parameter

SymbolUnit

Min

Electrical Data

Primary current, measuring range

IP M

A

Sensitivity

S

mV/A

SymbolUnit

Specification
TypicalMax−300

Conditions

300
6.67

@ UC = 5 V

HSTDR 400-000
Parameter

Min

Electrical Data

Primary current, measuring range

IP M

A

Sensitivity

S

mV/A

SymbolUnit

Specification
TypicalMax−400

Conditions

400
5@ UC = 5 V

HSTDR 600-000
Parameter

Min

Specification
Typical
Max

−600

600

Electrical Data

Primary current, measuring range

IP M

A

Sensitivity

S

mV/A

SymbolUnit

3.33

Conditions@ UC = 5 V

HSTDR 900-000
Parameter

Min

Specification
Typical
Max

−900

900

Electrical Data

Primary current, measuring range

IP M

A

Sensitivity

S

mV/A

SymbolUnit

2.22

Conditions@ UC = 5 V

HSTDR 1000-000
Parameter

Min

Specification
Typical
Max

−1000

1000

Electrical Data

Primary current, measuring range

IP M

A

Sensitivity

S

mV/A

SymbolUnit

2Conditions@ UC = 5 V

HSTDR 1200-000
Parameter

Min

Electrical Data

Primary current, measuring range

IP M

A

Sensitivity

S

mV/A

SymbolUnit

Specification
TypicalMax−1200

Conditions

1200
1.67

@ UC = 5 V

HSTDR 1300-000
Parameter

Min

Specification
Typical
Max

−1300

1300

Electrical Data

Primary current, measuring range

IP M

A

Sensitivity

S

mV/A

SymbolUnit

1.54

Conditions@ UC = 5 V

HSTDR 1500-000
Parameter

Min

Specification
Typical
Max

−1500

1500

Electrical Data

Primary current, measuring range

IP M

A

Sensitivity

S

mV/A

1.33

Conditions@ UC = 5 V

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HSTDR XXX-000
Total error

HSTDR xxxx-000: Absolute Total error εtot @ 3 sigma±80.0

Total error (mV)

±70.0
±60.0
±50.0
±40.0
±30.0
±20.0
±10.0
±0.0

-IP M

IP M

0
Primary current (A)Primary current

Total error
T = 25 °C,
UC = 5 V initial

Total error @ 25 °C

Total error @ TT range

Total error−40 °C ≤ T ≤ 125 °C,
UC = 5 V initial

Total error
T = 25 °C,
UC = 5 V After reliability

Total error−40 °C ≤ T ≤ 125 °C,
UC = 5 V After reliability

(A)

(mV)

(%)

(mV)

(%)

(mV)

(%)

(mV)

(%)

−IP M

±55

±2.75 %

±70

±3.5 %±65±3.25 %

±70

±3.5 %

0±10±0.5 %

±20

±1 %

±15

±0.75 %

±20

±1 %

IP M

±55

±2.75 %

±70

±3.5 %±65±3.25 %

±70

±3.5 %

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HSTDR XXX-000
Heating generation on busbar due to primary current
Setup
Condition- Inside climate chamber- 55 °C setting up in chamber- IP range: 100 A -1500 ADC- Mounting: refers to picture- Test points: middle of busbar, inside DUT- Resistance of system: 156 μΩ

HST series:- Cu-ETP- Section: 3 x 16.7 (mm)- Length: 39 mm- Resistance: 20 μΩ
Distribution busbar besides:- Cu-ETP- Section: 3 x 16.7 (mm)- Length: 200 mm- Resistance: 68 μΩ* Busbars besides are designed to simulate the application in customer system

Heating generation chart according to above condition

Busbarheatingtest@ 55with°C climate
with climate
chamberBusbar heating
test
@55℃
chamber
150

TEMPERATURE ON BUSBAR OF DUT (℃)

140
130
120
110
100
90
80
70
60
50

20

0

40

60

100

80

120

140

160

180

200

220

240

260

280

300

DURANTION TIME (S)
100 A

200 A

300 A

400 A

500 A

600 A

700 A

800A

900A

1000A

1100 A

1200 A

1300 A

1400 A

1500 AMax duration time to reach the limit 150 °C according to above condition

IP

≤ 700

800

900

1000

1100

1200

1300

1400

1500

Max duration
time (s)Continue

160

100

73

52

43

34

31

25

* The result is for reference only according to certain condition as above.
* If the profile of primary current is over than the limit, please consider enlarging the section of busbar besides.

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HSTDR XXX-000
Return Busbar Influence On Transducer OutputbaTotal error (mV) under return busbar influence
Test based on HSTDR 1500-000

1500 60 1500 80-1mV1500 40
1500 201500 0

00

0 20

0 40

0 60

0 80

IP = 200 A & b = 40 mm

200 0

9mV

1400 80

200 201400 60

200 4019mV1400 40200 601400 20200 8029mV1400 01300 80a=0mm

1300 60
a=5mm

a=20mm

400 20400 4049mV1300 40400 6059mV1300 20a=10mm

400 0

39mV

1300 069mV1200 8079mV

400 80600 0600 201200 60
a=30mm

600 401200 40600 601200 20a=85mm

600 801200 0700 01100 80

700 201100 60

700 401100 40700 601100 20700 801100 0800 01000 80

800 201000 60
1000 401000 20800 401000 0900 80 900 60

900 40 900 20

900 0

800 80800 60*Return Busbar Influence:
Difference of the Uout between the return busbar (C-shape) vs reference (straight busbar).

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HSTDR XXX-000
PERFORMANCES PARAMETERS DEFINITIONS

Response time (delay time) tD 90:

Primary current definition:

The time between the primary current signal (IP N) and theoutput signal reach at 90 % of its final value.

Uout

I [A]

Primary current nominal (IP N)
Primary current, measuring range (IP M)

IT

90 %
Uout

IP
tD 90

IP

Definition of typical, minimum and maximum values:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:t [µs]

Sensitivity:
The transducer’s sensitivity S is the slope of the straight line
Uout = f (IP), it must establish the relation:
Uout (IP) = UC/ 5 (S × IP + UO)

Offset with temperature:
The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IO T is a maximum variation the offset in thetemperature range:
IO T = IO E max − IO E min

The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

The offset drift TCIO E AV is the IO T value divided by thetemperature range.

Magnetic offset:

Sensitivity with temperature:

The magnetic offset is the consequence of an any current on
the primary side. It’s defined after a stated excursion of primary
current.

Linearity:
The maximum positive or negative discrepancy with a reference
straight line Uout = f (IP).
Unit: linearity (%) expressed with full scale of IP N.

Uout

The error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.
The sensitivity variation ST is the maximum variation (inppm or %) of the sensitivity in the temperature range:
ST = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.
The sensitivity drift TCS AV is the ST value divided by thetemperature range. Deeper and detailed info available is ourLEM technical sales offices (www.lem.com).

Offset voltage @ IP = 0 A:

Non linearity example

The offset voltage is the output voltage when the primary current
is zero. The ideal value of UO is UC/ 2. So, the difference ofReferencestraight line
Max linearity error

IP
Linearity variation in IP N

UO − UC/ 2 is called the total offset voltage error. This offset error
can be attributed to the electrical offset (due to the resolution of
the ASIC quiescent voltage trimming), the magnetic offset, thethermal drift and the thermal hysteresis. Deeper and detailed
info available is our LEM technical sales offices (www.lem.
com).

Environmental test specifications:
Refer to LEM GROUP test plan laboratory CO.11.11.515.0 with
“Tracking_Test Plan_Auto” sheet.
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HSTDR XXX-000

Validation test specifications
Name

Standard

Condition

ELECTRICAL TESTSFrequency bandwidth

LEM 98.20.00.538.0

30 Hz to 100 kHz; At 20 A peak ;≥ 40 kHz @ −3 dB

Phase delay

LEM 98.20.00.538.0

Power supply 5 V, IP = 0 A 30 Hz to 100 kHz;At 20 A peak

Output voltage Noise (peak-to-peak)LEM 98.20.00.575.0

Sweep from DC to 1 MHz

Delay time ; di/dt

LEM 98.20.00.545.0

100 A/µs ; tD 90 of IP N ≤ 6 µs

du/dt

LEM 98.20.00.545.0

Slope: 5 kV/µs U = 1000 V

ENVIRONMENTAL TESTSJESD 22-A101(03/2009)

Ageing 85 °C /85 % RH

85 °C/85 % RH; Duration = 1000 h; Power supply 5 V ; primary
current 0 A; Monitoring output 1 time/hr

Low temperature operating endurance

ISO 16750-4 § 5.1.1.2(04/2010)−40 °C, 24 h; Power supply 5 V
Monitoring: 2 times/hr

High temperature operating endurance

ISO 16750-4 § 5.1.2.2(04/2010)

Temperature 125 °C; 96 h; power supply 5 V
Monitoring 2 times/hr

Humidity heat, cyclic test: Test 2 Composite
temperature/humidity cyclic test

ISO 16750-4 § 5.6.2.3(04/2010)

Temperature range −10 °C/ +65 °C, 93 % RH
Duration = 240 h (10 cycles)

Thermal shock

ISO 16750-4 § 5.3.2(04/2010)

Temperature range −40 °C& 125 °C, 300 cycles;
20 min/20 min, no power supply

Sinus Vibration

ISO 16750-3 § 4.1.2.2.2.2(12/2012)

Monitoring UC and Uout is mandatory,
Temperature −40/125 °C, 22 H/axis, 100 Hz to 440 Hz
Sweep: ≤ 0.5 oct/min

Random Vibration

ISO 16750-3 § 4.1.2.2.2.3(12/2012)

Monitoring UC and Uout is mandatory, Temperature −40/125 °C, 22
H/axis, 10 to 2000 Hz 10 G (RMS)

Mechanical Shocks

ISO 16750-3 § 4.2.2(12/2012)

Operating mode: 3.2
Pulse shape: half sine, 50 G, 6 ms
10 shocks per direction (total 60)

Free Fall

ISO 16750-3 § 4.3(12/2012)

3 pcs, Falls/DUT: 2 times, Height = 1 m
3 axes, 2 directions by axis,
Operating mode: 1.1

Cross section checking on PCBA

IPC-A-610G: 2017Class 3W

IPC-TM-650 2.1.1F:2015

Cross section checking on solderless connections

GB/T 18290.5-2015

IPC-TM-650 2.1.1F:2015

Whisker checking on PCBA

Refer to JESD201-A(04/2010)

Refer to JESD22-A121A (04/2010)
Class 2

Dielectric withstand voltage

ISO 16750-2 § 4.11
(11/2012)

4.7 kV test voltage, time = 60 s, No dielectric breakdown, no flashover, functional after test

Insulation test

ISO 16750-2 § 4.12
(11/2012)

500 V DC, time = 60 s, RINS ≥ 500 MΩ Minimum

INSULATION TESTSEMC TESTS
Immunity to Electrostatic Discharges(Handling of devices)

ISO 10605(07/2008)

Contact discharges: ±4.6 kV, Air discharges: ±8 kV
UC = NO power supply, Criteria B

Immunity to Radiated disturbances(ALSE)

ISO 11452-2(11/2004)

Power supply: 5 V
f = 400 MHz to 1 GHz; Level = 100 V/m (CW, AM 80 %)f = 0.8 GHz to 2 GHz; Level = 70 V/m (CW, PM PRR = 217 Hz
f = 1 GHz to 2 GHz; Level = 70 V/m (CW)
Criteria A acceptance @ 5 %Immunity to Conducted disturbances(BCI)

ISO 11452-4(12/2011)

Level = see Annex E Fig. & Table E.1
f = 1 MHz to 400 MHz
Criteria A acceptance @ 5 %Emission Radiated(ALSE)CISPR 25 §6.5
(2016)

Table 7, Class 5 by default
f = 150 kHz to 2.5 GHz
Load simulator will be provided (R&D)
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HSTDR XXX-000

Recommendations for use:

Storage:
The LEM transducers must be stored in a dry location, within the following ambient room conditions (< 40 °C and < 60 % RH).
The product should be stored in its closed and original packing. Ensure during storage and transport, the units are not damaged
by applying excess weight to the packaging. The transducers mustn’t be stored more than 2 years. Ensure during storage andtransport, the units are not damaged by applying excess weight to the boxes. Maximal stackup storage of secondary container(pallet) must not exceed 2.
Unpacking:
When unpacking, care must be taken with cutting tools not to damage the transducer.
Handling:
The LEM transducers must be handled with care and not undergo any shocks or falls (fall=scrap). It is recommended to handle
the transducer as long as possible inside its original packing (thermoform tray on customer’s assembly station). It is forbidden tohandle the transducers by their terminals. To avoid problems of ESD, it is recommended not to touch secondary terminals. Any
rework operations are forbidden and will conduct part out of LEM warranty.
Installation:
The workshop and the people in contact with the transducers must be ESD protected. Before installing, be sure to check that thetransducer corresponds to the required application. Be sure that the air gap between the housing of the transducer and the primarybar is sufficient to avoid damage in case of vibrations.
Do not install (or re-install) a damaged part (broken or crushed element…).
LEM do not recommend customers to make any maintenance on LEM sensors , otherwise it will drive sensors directly out of
warranty.
Disassembly:
Suppress all electricity power before disassembling the transducer.

dcp

Mounting:
1. Recommend that customer’s busbar are mounted under HSTDR, to avoid shorten clearance/creepage distance
2. Recommend to use insulation layer under HSTDR if the HSTDR bottom is close to other metal parts, to avoid potential
insulation issue (two auxiliary holes of plastic injection on HSTDR bottom)

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