DATA SHEET
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IGBT – Field StopC650 V, 60 A

FGA60N65SMD

GGeneral Description

EUsing Novel Field Stop IGBT Technology, onsemi’s new seriesof Field Stop IGBTs offer the optimum performance for Solar
Inverter, UPS, SMPS, Welder and PFC applications where low
conduction and switching losses are essential.
Features• Maximum Junction Temperature: TJ = 175°C• Positive Temperature Co−efficient for Easy Parallel Operating• High Current Capability• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 60 A
• Fast Switching: EOFF = 7.5 mJ/A
• Tighten Parameter Distribution• This Device is Pb−Free and is RoHS Compliant

GCE

TO−3P−3LD / EIAJ SC−65, ISOLATEDCASE 340BZ

MARKING DIAGRAM

Applications

FGA60N65SMD
AYWWZZ• Solar Inverter, UPS, SMPS, Welder, PFC
ABSOLUTE MAXIMUM RATINGS
Symbol

Value

Unit

VCES

Collector to Emitter Voltage

650

VVGES

Gate to Emitter Voltage±20

V

Transient Gate to Emitter Voltage±30

V

Collector Current

TC = 25°C

120

A

TC = 100°C

60A

ICRating

ICM

Pulsed Collector Current (Note 1)

180

A

IFDiode Forward Current

TC = 25°C

60A

TC = 100°C30A

IFM

Pulsed Diode Maximum Forward Current(Note 1)

180

A

PD

Maximum Power
Dissipation

TC = 25°C

600W

TC = 100°C

300

W

TJ

Operating Junction Temperature−55 to+175°CTstg

Storage Temperature Range−55 to+175°C

TL

Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds

300°C

FGA60N65SMD = Specific Device Code
A= Assembly Location
YWW= Date Code (Year & Work Week)
ZZ= Lot CodeORDERING INFORMATION
DevicePackageShipping

FGA60N65SMD

TO−3P−3L

450 / Box

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature© Semiconductor Components Industries, LLC, 2011

January, 2024 − Rev. 4

1

Publication Order Number:
FGA60N65SMD/D

FGA60N65SMD
THERMAL CHARACTERISTICS
SymbolCharacteristic

Value

Unit

RqJC(IGBT)

Thermal Resistance, Junction to Case

0.25°C/W

RqJC(Diode)

Thermal Resistance, Junction to Case

1.1°C/W

RqJA

Thermal Resistance, Junction to Ambient

40°C/W

ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
SymbolParameter

Test Condition

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS
BVCES

Collector to Emitter Breakdown Voltage

VGE = 0 V, IC = 250 mA

650−−

V

DBV CES

Temperature Coefficient of Breakdown
Voltage

VGE = 0 V, IC = 250 mA

−0.6−

V/°C

ICES

Collector Cut−Off Current

VCE = VCES, VGE = 0 V−−250mA

IGES

G−E Leakage Current

VGE = VGES, VCE = 0 V−−±400nADT JON CHARACTERISTICS
VGE(th)G−E Threshold Voltage

IC = 250 mA, VCE = VGE

3.5

4.5

6.0

V

VCE(sat)Collector to Emitter Saturation Voltage

IC = 60 A, VGE = 15 V

−

1.9

2.5

V

IC = 60 A, VGE = 15 V, TC = 175°C

−

2.1−

V

VCE = 30 V, VGE = 0 V, f = 1 MHz

−

2915−

pF

DYNAMIC CHARACTERISTICS
Cies

Input Capacitance

Coes

Output Capacitance

−

270−

pF

Cres

Reverse Transfer Capacitance

−85−

pF−

1827ns−4770

ns

Turn-Off Delay Time−

104146nstf

Fall Time−5068

ns

Eon

Turn−On Switching Loss

−

1.54

2.31

mJ

Eoff

Turn−Off Switching Loss

−

0.45

0.60

mJ

Ets

Total Switching Loss

−

1.99

2.91

mJ

td(on)

Turn-On Delay Time−

18−

ns−

41−

ns

Turn-Off Delay Time

−

115−

ns

tf

Fall Time

−

48−

ns

Eon

Turn−On Switching Loss

−

2.08−

mJ

Eoff

Turn−Off Switching Loss

−

0.78−

mJ

Ets

Total Switching Loss

−

2.86−

mJ

Qg

Total Gate Charge−

189284nC

Qge

Gate to Emitter Charge−

2030nC

Qgc

Gate to Collector Charge−91137nC

SWITCHING CHARACTERISTICStd(on)trtd(off)trtd(off)

Turn-On Delay Time
Rise Time

Rise Time

VCC = 400 V, IC = 60 A, VGE = 15 V,
RG = 3 W, Inductive Load, TC = 25°C

VCC = 400 V, IC = 60 A, VGE = 15 V,
RG = 3 W, Inductive Load, TC = 175°C

VCE = 400 V, IC = 60 A, VGE = 15 V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.

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2

FGA60N65SMDELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)
SymbolVFMParameter
Diode Forward Voltage

ErecReverse Recovery Energy

trr

Diode Reverse Recovery TimeQrr

Test Condition
IF = 30 A
IF = 30 A,
dIF/dt = 200 A/ms

Diode Reverse Recovery Charge

Min.

Typ.

Max.

Unit

TC = 25°C

−

2.1

2.6

V

TC = 175°C

−

1.7−

TC = 175°C

−

127−

mJ

TC = 25°C

−

47−

ns

TC = 175°C

−

212−

TC = 25°C−

87−

TC = 175°C

−

933−

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.

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3FGA60N65SMD
TYPICAL PERFORMANCE CHARACTERISTICS
20 V
15 V

TC = 25°C

150

180

12 V
10 V

120
90
60

VGE = 8 V

90
VGE = 8 V

60

Figure 1. Typical Output Characteristics

Figure 2. Typical Output Characteristics
3.590
60
30

1032120 A

2.560 A

2.0

IC = 30 A

1.52575

50100

150125

TC, Case Temperature (5C)

Figure 3. Typical Saturation Voltage
CharacteristicsFigure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20Common Emitter
TC = 25°C

1612860 A

120 A

IC = 30 A
43.01.054Common Emitter
VGE = 15 V

VCE, Collector−Emitter Voltage (V)20

46VCE, Collector−Emitter Voltage (V)VCE, Collector−Emitter Voltage (V)

120

420

VCE, Collector−Emitter Voltage (V)Common Emitter
VGE = 15 V
TC = 25°C
TC = 175°C

150010 V

120064VCE, Collector−Emitter Voltage (V)IC, Collector Current (A)VCE, Collector−Emitter Voltage (V)2018001503030012 V20 V
15 V

TC = 175°C
IC, Collector Current (A)IC, Collector Current (A)1808121620Common Emitter
TC = 175°C

16128120 A

4060 AIC = 30 A
481216

VGE, Gate−Emitter Voltage (V)VGE, Gate−Emitter Voltage (V)Figure 5. Saturation Voltage vs. VGE

Figure 6. Saturation Voltage vs. VGE

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417520

FGA60N65SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
7000

VGE, Gate−Emitter Voltage (V)

5000
Cies

4000
3000
2000

Coes

1000

Cres

00.1

110400 V

630Figure 7. Capacitance Characteristics

Figure 8. Gate Charge Characteristics

40td(on)Common Emitter
VCC = 400 V, VGE = 15 V
IC = 60 A
TC = 25°C
TC = 175°C

20201030401000td(off)
100tf

1050

030204050

RG, Gate Resistance (W)Figure 9. Turn−on Characteristics vs. Gate
Resistance

Figure 10. Turn−off Characteristics vs. Gate
Resistance

Switching Time (ns)

Eon

Eoff
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 60 A
TC = 25°C
TC = 175°C
010RG, Gate Resistance (W)

1000

1200

Common Emitter
VCC = 400 V, VGE = 15 V
IC = 60 A
TC = 25°CTC = 175°C

tr01601208040Qg, Gate Charge (nC)

10Switching Loss (mJ)

300 V

9VCE, Collector−Emitter Voltage (V)600.1

VCC = 200 V

6000

1008010Common Emitter
TC = 25°C

12030

Switching Time (ns)Capacitance (pF)6000

Switching Time (ns)15Common Emitter
VGE = 0 V, f = 1 MHz
TC = 25°C

10203040100

trtd(on)10150

Common Emitter
VGE = 15 V, RG = 3 W
TC = 25°C
TC = 175°C

030

60

90120IC, Collector Current (A)RG, Gate Resistance (W)Figure 11. Switching Loss vs. Gate ResistanceFigure 12. Turn−on Characteristics vs. Collector
Current

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5FGA60N65SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000

10100tf
101Common Emitter
VGE = 15 V, RG = 3 W
TC = 25°C
TC = 175°C
03060900.01120

Common Emitter
VGE = 15 V, RG = 3 W
TC = 25°C
TC = 175°C
0306090120

Figure 14. Switching Loss vs. Collector
Current
300

VCC = 400 V
Load Current: peak of square wave
Duty cycle: 50%
TC = 100°C
Power Dissipation: 300 W60

TC = 100°C

40100 ms

100k

10k1 ms1010 ms
DC1*Notes:
1. TC = 25°C
2. TJ = 175°C
3. Single Pulse

0.1

0.01
1k10 ms

100

201M

1Figure 15. Load Current vs. Frequency

Figure 16. SOA Characteristics

Irr, Reverse Recovery Current (A)100
TC = 175°C
TC = 125°C
TC = 75°C
TC = 175°C
TC = 125°C
TC = 75°C
TC = 25°C

TC = 25°C
01000

100

VCE, Collector−Emitter Voltage (V)141010f, Switching Frequency (Hz)200
IF, Forward Current (A)0.1

Figure 13. Turn−off Characteristics vs. Collector
Current

80

1EoffIC, Collector Current (A)10001IC, Collector Current (A)120
IC, Collector Current (A)Switching Loss (mJ)

td(off)

IC, Collector Current (A)Switching Time (ns)Eon1231086
di/dt = 200 A/ms

4

di/dt = 100 A/ms

204

TC = 25°C
TC = 175°C

12VF, Forward Voltage (V)

010

20

30

IF, Forward Current (A)Figure 17. Forward Characteristics

Figure 18. Reverse Recovery Current

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FGA60N65SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Qrr, Stored Recovery Charge (nC)trr, Reverse Recovery Time (ns)400
TC = 25°CTC = 175°C
300200di/dt = 200 A/ms

di/dt = 100 A/ms

50

00154530

1400

1000
800
600
di/dt = 200 A/ms

400

di/dt = 100 A/ms

200060

TC = 25°C
TC = 175°C

120001020

304050IF, Forward Current (A)IF, Forward Current (A)Figure 19. Reverse Recovery Time

Figure 20. Stored Charge

60

Thermal Response (Zthjc)

0.5

0.1

0.5
0.2

0.01

0.1
0.05
0.02
0.01

PDM
t1Single Pulse

1E−3
1E−5

t2

Duty Factor: D = t1 / t2
PEAK Tj = PDM × Zthjc + TC
1E−4

1E−30.010.1

1

Rectangular Pulse Duration (s)Figure 21. Transient Thermal Impedance of IGBT

Thermal Response (Zthjc)

310.5
0.2
0.1

0.1

PDM

0.05
0.02
0.01
Single Pulse

t1Duty Factor: D = t1 / t2
PEAK Tj = PDM × Zthjc + TC

0.010.005
1E−5t2

1E−4

1E−30.01

Rectangular Pulse Duration (s)Figure 22. Transient Thermal Impedance of Diode

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70.1

1

MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONSTO−3P−3LD / EIAJ SC−65, ISOLATEDCASE 340BZISSUE ODOCUMENT NUMBER:DESCRIPTION:

98AON13862G

DATE 31 OCT 2016

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

TO−3P−3LD / EIAJ SC−65, ISOLATEDPAGE 1 OF 1

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