Tuesday, September 11
9:00-12:15
Opening & Plenary Sessions (Yasuda Auditorium)
School of Engineering
Bldg.2 North Wing 2F
Room 222

Lunch
School of Engineering
School of Engineering
Bldg.2 North Wing 2F
Bldg.2 North Wing 3F
Room 223
Room 231

School of Engineering
Bldg.2 North Wing 1F
Room 211
14:00-15:15

School of Engineering
Bldg.2 North Wing 1F
Room 212

School of Engineering
Bldg.2 North Wing 1F
Room 213

School of Engineering
Bldg.2 North Wing 2F
Room 221

14:00-15:15

14:00-15:15

14:00-15:15

14:00-15:15

A-1:Spin Transport

B-1:ReRAM

C-1:Nanowire andNanostructure-Based FET

D-1:GaN Device
Technologies I

F-1:High-Capacity-AnodeMaterials (Li, Si)

School of Engineering
Bldg.2 Old Wing 3F
Room 233

School of Engineering
Bldg.2 North Wing 4F
Room 241

School of Engineering
Bldg.2 North Wing 4F
Room 243

School of Engineering
Bldg.2 North Wing 4F
Room 244

School of Engineering
Bldg.2 Old Wing 4F
Room 246

14:00-15:15

14:00-15:15

14:00-15:15

14:00-15:15

14:00-15:15

14:00-15:15

G-1:Interconnect-I

H-1:Germanium for
Photonics Applications

M-1:Quantum Nano
Photonics

N-1:Novel Thin Film
Materials and Devices

J-1:Innovative Device Based K-1:Organic Light Emitting
Circuits Iand Sensing Devices

Coffee Break
15:30-17:15

A-2:Spintornics for AI andLSI Applications

15:30-16:30

15:30-16:30

15:30-17:15

15:30-16:45

15:30-16:45

15:30-17:15
Area7 & Special

15:30-16:45
Area3 & 7

15:30-17:15

15:30-16:45

B-2:Selector for Memory

C-2:Transistor Physics andReliability

D-2:SiC MOS Interface

F-2:Battery / Fuel Cell

H-2:Si Photonic Integrated
Circuits

J-2:Ion/Photon Coupled
Systems

K-2:Organic Printing andPatterning Technologies

M-2:Optical Properties of
2D Materials

N-2:Crystal Growth ofGroup IV and RelatedMaterials I

School of Engineering
Bldg.2 North Wing 4F
Room 241
9:00-10:30
Area7 & Special

School of Engineering
Bldg.2 North Wing 4F
Room 243

School of Engineering
Bldg.2 North Wing 4F
Room 244

School of Engineering
Bldg.2 Old Wing 4F
Room 246

9:00-10:15

9:00-10:30

9:00-10:30

H-3:Heterogeneous
J-3:Innovative Device Based
Photonic Integrated Circuits
K-3:Bio and Micro Systems
Circuits II
on Si

M-3:2D Materials &Devices I

N-3:Oxide Materials andAdvanced Devices

10:45-12:00
Area10 & Special

10:45-11:45

10:45-12:00

K-4:Organic Memory,Actuator and Sensing
Devices

M-4:Nanowire Growth &Characterization

13:30-14:45

13:30-15:00

13:30-14:30
N-5:Poly-Si TFT
Technologies and Circuit
Applications

Departure 19:20 / Arrival 21:20
Banquet Cruise Departure

Wednesday, September 12
School of Engineering
Bldg.2 North Wing 1F
Room 211

School of Engineering
Bldg.2 North Wing 1F
Room 212

School of Engineering
Bldg.2 North Wing 1F
Room 213

School of Engineering
Bldg.2 North Wing 2F
Room 221

School of Engineering
Bldg.2 North Wing 2F
Room 222

School of Engineering
Bldg.2 North Wing 2F
Room 223

School of Engineering
Bldg.2 North Wing 3F
Room 231

School of Engineering
Bldg.2 Old Wing 3F
Room 233

9:00-10:30

9:00-10:30

9:00-10:30

9:00-10:30

9:00-10:30

9:15-10:30

9:00-10:15

9:00-10:30

A-3:Quantum Phenomena

B-3:In-Memory Computing
I

C-3:Characterization andProcess Technology

D-3:Ultrawide-Bandgap
Semiconductor Devices I

E-3:Characterizations ofGate Dielectrics

F-3:Perovskite

G-3:3D Intergration
Coffee Break

10:45-12:00

10:45-12:00

10:45-12:00

10:45-12:00

10:45-12:00

10:45-12:00

10:45-11:45

A-4:Electrical Control ofMagnetism

B-4:In-Memory Computing II

C-4:Ferroelectric andTunnel FET I

D-4:Ultrawide-Bandgap
Semiconductor Devices II

E-4:Advanced Materials
Synthesis and Simulation

F-4:Perovskite

G-4:Advanced Bonding

10:45-12:00

J-4:Thin Film Oxide
H-4:Integration Technology
Materials Based Devices andfor Photonic Applications
Systems

Lunch

Luncheon Seminar: Tektronix
13:30-15:00

13:30-15:00

13:30-15:00
Area1 & 2

A-5:Novel Functional
Devices

B-5:Gate Stack and Interface
Engineering

C-5:Ferroelectric Hafnium
Oxide: Breakthrough inTransistor and Memory I

15:15-16:30

15:15-16:30

15:15-16:30
Area1 & 2

15:15-16:30

15:15-16:30

15:15-16:30A-6:New Materials andPhysics in Spintronics

B-6:Process Technology

C-6:Ferroelectric Hafnium
Oxide: Breakthrough inTransistor and Memory II

D-6:Silicon Devices andProcesses

E-6:Group IV Materials

F-6:Quantum Dot

13:30-15:00

13:30-15:00

D-5:High Frequency
Devices/Narrow Gap
Devices

E-5:Nanostructures:
Synthesis and Properties

13:30-15:00

13:45-15:00

13:30-15:00
Area7 & Special

F-5:Si and Compounds

H-5:Photonic Devices andPlatforms for Novel
Applications

J-5:Biomedical Devices andSystems

K-5:Organic Transistors

M-5:Physics & Applicationof Graphene Devices

15:15-16:15

15:15-16:15

15:15-17:00

15:15-16:30

15:15-16:30

15:15-16:30

G-6:Interconnect-II

H-6:Hybrid Devices andMaterials

J-6:Advanced ImageSensors

K-6:Biodevices andMaterials

M-6:Nano-Structure
DevicesN-6:New Functional
Materials and Devices

16:30-17:15

17:00-17:15

16:30-17:15

16:30-17:15

Short Presentation
Area6

Short Presentation
Special Area

Short Presentation
Area7

Short Presentation
Area8

16:30-17:15
Short Presentation
Area10School of Engineering
Bldg.2 North Wing 4F
Room 241
9:00-10:45
Area5 & Special

School of Engineering
Bldg.2 North Wing 4F
Room 243

School of Engineering
Bldg.2 North Wing 4F
Room 244

School of Engineering
Bldg.2 Old Wing 4F
Room 246

9:00-11:00

9:00-10:30

9:00-10:15

J-7:LiDAR and Imaging
Applications

K-7:Chemical and Gas
Sensors

M-7:2D Materials &Devices II

N-7:Advanced IGZO
Processes and Devices

14:00-16:00
Area1 & Special

14:00-15:30

Coffee Break

16:30-17:15
Short Presentation
Area9

16:30-17:15
Short Presentation
Area2
Short Presentation
Area3

16:30-17:15
Short Presentation
Area1

16:30-17:15
Short Presentation
Area4
Short Presentation
Area11

Short Presentation
Area5

17:30-19:30
Rump Sessions (Faculty of Engineering Bldg.2 Room 213)Thursday, September 13
School of Engineering
Bldg.2 North Wing 1F
Room 211

School of Engineering
Bldg.2 North Wing 1F
Room 212

School of Engineering
Bldg.2 North Wing 1F
Room 213

School of Engineering
Bldg.2 North Wing 2F
Room 221

School of Engineering
Bldg.2 North Wing 2F
Room 222

School of Engineering
Bldg.2 North Wing 2F
Room 223

School of Engineering
Bldg.2 North Wing 3F
Room 231

9:00-10:45

9:00-10:45

9:00-10:45

9:00-10:45

9:00-10:45

9:45-10:45

9:00-10:45

A-7:Quantum
Computational Devices

B-7:Flash and 1T-DRAM

C-7:Ferroelectric andTunnel FET II

D-7:GaN Device
Technologies II

E-7:Advanced Growth ofF-7:Photoctalayst/Solar Cells
Widegap Semiconductors

School of Engineering
Bldg.2 Old Wing 3F
Room 233

G-7:MEMS Application

Coffee Break

11:00-13:30
Poster Session (Ito International Reserch Center, Ito Hall)
Lunch
14:00-16:00

14:00-15:45

14:00-15:45

14:00-15:45
Area6 & 11

A-8:Spin-Orbit Interaction

C-8:Group III-V and Ge
Technology

D-8:SiC Devices andProcesses

F-8:ThermoelectricMaterials

Area Scope

Area 1: Advanced CMOS: Material Fundamentals, Process Science and Device Physics

14:00-15:30

H-8:Light Emitting Devices J-8:Innovative Device Based K-8:Molecular Materials andand Photodiodes
Circuits IIIDevices

Area Scope

14:00-15:15
N-8:Crystal Growth ofGroup IV and RelatedMaterials II

Area 9: Novel Functional / Quantum / Spintronic Devices and Materials

Area 2: Advanced / Emerging Memories and New Applications

Area 10: Thin Film Electronics: Oxide, Non-single Crystalline and Novel Process

Area 3: Interconnect / 3D Integrations / MEMS

Area 11: Advanced Materials Synthesis and Advanced Characterization

Area 4: Power / High-speed Devices, and Materials

Special Area: Advanced Circuits/Systems Interacting with Innovative Devices & Materials

Area 5: Advanced Photonics: Devices, Integration and Related Technology
Area 6: Photovoltaic / Energy Harvesting / Battery-related Technology
Area 7: Organic / Molecular / Bio-electronics
Area 8: Low Dimensional Devices and Materials