10th International Conference on
Hot Wire (Cat) & Initiated Chemical Vapor Deposition(HWCVD10)
Conference Program
Monday September 3, 2018
09:00-09:10

Welcome Remarks

Plenary

Chair : K.K.S. Lau
Drexel University, USA
Mo-PL-1 Current status of Cat-CVD technology
Invited- history of research and current status of industrial implementation H. Matsumura
Japan Advanced Institute of Science and Technology (JAIST), Japan

09:10-09:50

Keynote I
09:50-10:30

Chair : K.K.S. Lau
Drexel University, USA
Mo-KE-1 Hot-wire CVD developments and applications
Invited
L. Schäfer
Fraunhofer Institute for Surface Engineering and Thin Films IST, Germany

10:30-10:50

Coffee breakSpecial Tutorial Chair : H. Horibe
Osaka City University, Japan
10:50-11:30 Mo-ST-1 Detection of molecular radical species in catalytic and initiated chemical vapor
Inviteddeposition processes
H. Umemoto
Shizuoka University, Osaka City University, Japan
11:30-13:00

Lunch

Fundamentals
13:00-13:40

Chair : K. OhdairaJapan Advanced Institute of Science and Technology (JAIST), Japan
Mo-O1-1 Modeling of chemical vapor deposition reactions and processes
InvitedM. Kawase
Kyoto University, Japan

13:40-14:00

Mo-O1-2No shown
A computational model for n-butyl acrylate film deposition in initiated chemicalvapor deposition process
S. Ates*, O. Ebil
*Izmir Institute of Technology, Turkey

14:00-14:20

Mo-O1-3

Decomposition of hexamethyldisilazane on a hot tungsten filament andgas-phase reactions in a hot-wire chemical vapor deposition reactor
E. Ampong, Y. Shi*
*University of Calgary, Canada

14:20-14:40

Mo-O1-4

Surface reactions on the metal catalysts with ethane and four-membered-ringorganosilicon molecules
Y. ShiUniversity of Calgary, Canada

14:40-15:00

Coffee breakProcesses I
15:00-15:40

Chair : A.Y. Kovalgin
University of Twente, Netherlands
Mo-O2-1 The highs and lows of iCVD
InvitedK.K.S. Lau
Drexel University, USA

15:40-16:00

Mo-O2-2

Deposition of polymer films onto moving substrates
C. Cheng*, M. Gupta*University of Southern California, USA

16:00-16:20

Mo-O2-3

Withdrawn
Polymeric thin film fabrication via initiated chemical vapor deposition forprotection of optical surfaces
M. Ozpirin*, O. Ebil*Izmir Institute of Technology, Turkey

Applications I

Chair : Y. Katamune
Kyushu Institute of Technology, Japan
Mo-O3-1 Various applications of hot-wire chemical vapor deposition to solar-cell
Invitedfabrication technologies
A. Masuda
National Institute of Advanced Industrial Science and Technology (AIST),Japan

16:20-17:00

17:30-19:30

SocialTuesday September 4, 2018
Processes II
09:00-09:40

Chair : Y. Shi
University of Calgary, Canada
Tu-O1-1 Hotwire-assisted atomic layer deposition: principles and examples
InvitedA.Y. Kovalgin
University of Twente, Netherlands

09:40-10:00

Tu-O1-2

Selective coating of nanostructures in normal pressure and temperature basedon surface curvature
V.A. Lovikka*, M. Leskelä*University of Helsinki, Finland

10:00-10:20

Tu-O1-3

A simplest Cat-CVD apparatus without direct substrate heating system
H. Matsumura*, K. Koyama, K. Ogawa, S. Terashima, T. Konishi, T. Baba, Y.
Takeuchi, K. Ohdaira*Japan Advanced Institute of Science and Technology (JAIST), Japan

10:20-10:40

Tu-O1-4

How hot is the wire: optical, electrical and combined methods of filament
temperature determination
A.J. Onnink*, A.Y. Kovalgin, J. Schmitz*University of Twente, Netherlands

10:40-11:00

Coffee breakProcesses III

Chair : S. Ohmagari
National Institute of Advanced Industrial Science and Technology (AIST), Japan
Tu-O2-1 Leading role of HWCVD for diamond and related thin films and coating
Invitedmaterials: from advanced instrumentation, industrial applications to future
devices
R.D. VisputeBlue Wave Semiconductors, Inc., USA

11:00-11:40

11:40-12:00

Tu-O2-2

Charge effect on diamond nanoparticles generated in gas phase in hot filamentchemical vapor deposition.
H.Y. Kim*, B.-K. Song, K.-S. Kim, N.-M. Hwang*Seoul National University, Korea

Tu-O2-3

Withdrawn
Hot wire chemical vapour deposition aided growth of nano graphene at low
substrate temperature
S. Ramakrishna, R.O. Dusane**Indian Institute of Technology Bombay, India

12:00-13:40

Lunch

Materials I

Chair : M. Sato
Kitami Institute of Technology, Japan
Tu-O3-1 Transfer-free 4-inch-scale high-quality monolayer graphene synthesis on
InvitedTi-buffered substrates
B.-J. Park, J.-S. Choi, H. Ha, H.Y. Kim, K.-S. Kim, Z. Lee, G. Park, H.-T. Jung,J.-H. Eom, S.-G. Yoon**Chungnam National University, Korea

13:40-14:20

14:20-14:40

Tu-O3-2

14:40-15:00

Coffee breakMaterials II

Chair : A. Heya
University of Hyogo, Japan
Tu-O4-1 Growth of graphene on non-catalytic substrate by the vapor pressure ofcatalytic metal
J. Baek*, J. Kim, J. Kim, T. Suh, B. Shin, S. Jeon
*Korea Advanced Institute of Science and Technology (KAIST), Korea

15:00-15:20

Low-temperature formation of nanographene on Cu substrate using pentacene
A. Heya*, N. Matsuo*University of Hyogo, Japan

15:20-15:40

Tu-O4-2

High quality and monolayer graphene synthesized directly at 150 °C via
chemical vapor deposition without transfer process
B.-J. Park, S.-G. Yoon**Chungnam National University, Korea

15:40-16:00

Tu-O4-3Synthesis of vertically aligned carbon nanoflakes by hot wire chemical vapor
deposition: influence of process pressure and substrate temperature
M. Singh, H.S. Jha, P. Agarwal**Indian Institute of Technology Guwahati, India

16:00-16:20

Coffee break

16:20-18:00

Poster session

Wednesday September 5, 2018Materials III
09:40-10:20

Chair : K. Yasui
Nagaoka University of Technology, Japan
We-O1-1 Transparent passivated contact and phosphorous catalytic-doping for
Invitedcrystalline silicon solar cells
M. Pomaska*, Y. Liu, F. Komoll, A. Lambertz, W. Duan, H. Li, D. Qiu, M. Köhler,
F. Finger, U. Rau, K. Ding
*Forschungszentrum Juelich, Germaney

We-O1-2

Withdrawn
Effect of filament temperature on optoelectronic properties of hydrogenatedmicrocrystalline silicon thin films deposited by HWCVD
S. Shende, N. Wadibhasme, S.V. Ghaisas, R.O. Dusane
Indian Institute of Technology Bombay, India

We-O1-3

Withdrawn
Hot wire CVD driven silicon nanowire growth below eutectic temperature using
Sn nanotemplate
N. Meshram*, A. Kumbhar, R.O. Dusane*Indian Institute of Technology Bombay, India

10:20-10:40

We-O1-4Silicon carbide charged nanoparticles generated during a hot filament chemicalvapor deposition
D.-Y. Kim*, D. Kim, J.H. Kwon, N.-M. Hwang*Seoul National University, Korea

10:40-11:00

Coffee breakMaterials IV

Chair : S.-G. Yoon
Chungnam National University, Korea
We-O2-1 Large reduction of threading dislocation in diamond by hot-filament CVD
S. Ohmagari, H. Yamada, S. Tanaka, N. Tsubouchi, H. Umezawa, A. Chayahara,
Y. Mokuno
National Institute of Advanced Industrial Science and Technology (AIST),Japan

11:00-11:20

11:20-11:40

We-O2-2Surface morphology of homoepitaxial diamond grown by hot-filament CVD
using organic phosphorus solutions.
Y. Katamune*, D. Arikawa, D. Mori, A. Izumi*Kyushu Institute of Technology, Japan

11:40-12:00

We-O2-3Synthesis and characterization of diamond capsules for direct-drive inertial
confinement fusion
H. Kato*, H. Yamada, S. Ohmagari, A. Chayahara, Y. Mokuno, Y. Fukuyama, N.
Fujiwara, K. Miyanishi, Y. Hironaka, K. Shigemori*Osaka University, Japan

12:00-12:20

We-O2-4

Nitrogen doping of ZnO films using Ir hot-wire in catalytic reaction-assisted
CVD
Y. Adachi, S. Ono, A. Kato, A.M. Hashim, K. Yasui**Nagaoka University of Technology, Japan

12:20-14:00

Lunch

Applications II

Chair : M. Pomaska
Forschungszentrum Juelich, Germaney
We-O3-1 Conformal deposition of thin film silicon solar cells
photoabsorbers on nanostructured surfaces
R.E.I. Schropp*, L.W. Veldhuizen, Y. Kuang* University of the Western Cape, South Africa

14:00-14:20

We-O3-2

withultrathin

Withdrawn
Development of silicon based thin film solar cells using HWCVD on low cost
mild steel substrates
N.A. Wadibhasme, P.K. Bijalwan, A. Chikhalkar, M. Agarwal, M. Dutta, R.O.
Dusane**Indian Institute of Technology Bombay, India

Applications III Chair : M. Pomaska
Forschungszentrum Juelich, Germaney
14:20-14:40 We-O4-1 Conversion of conduction type of Cat-CVD p-type a-Si by ion implantation
H.T.C. Tu*, K. Koyama, N. Yamaguchi, H. Suzuki, K. Ohdaira, H. Matsumura*Japan Advanced Institute of Science and Technology (JAIST), Japan
14:40-15:00

We-O4-2

Withdrawn
A novel processing method to pattern hot wire chemical deposited a-Si:H for
application in pressure sensing device
V. Pandey*, M.P. Gururajan, R.O. Dusane*Indian Institute of Technology Bombay, Ujjain Engineering College, India

15:00-15:20

We-O4-3

Chemical vapor deposition of ultra-thin functional polymer layers for thedevelopment of advanced biosensors & microfluidic devices
C. Neikirk*, Y. Melnik, P. Narwankar*Applied Materials, USA

16:30-

Field trip & Banquet

Thursday September 6, 2018
Keynote II
09:00-09:40

Chair : R.E.I. Schropp
University of the Western Cape, South Africa
Th-KE-1 HW/CAT-CVD for high performance crystalline silicon heterojunction solar cells
InvitedQ. Wang
Jinko Solar, China

Applications IV

Chair : R.E.I. Schropp
University of the Western Cape, South Africa
Th-O1-1 Withdrawn
Optimization of boron doped hydrogenated amorphous Si layers prepared by
hot-wire CVD technique for n type crystalline Si hetero-junction solar cells
A. Mandal, N. Wadibhasme, A. Kumbhar, S.V. Ghaisas, R.O. Dusane**Indian Institute of Technology Bombay, India

10:00-10:20

Th-O1-2

10:20-10:40

Coffee breakApplications V

Chair : K. Shimizu
Nihon University, Japan
Th-O2-1 Excellent passivation quality of MPAT crystalline silicon textures for solar cells
by using proper chemical cleaning and Cat-CVD SiNx/a-Si stacked layers
C.T. Nguyen*, K. Ohdaira, H. Matsumura*Japan Advanced Institute of Science and Technology (JAIST), Japan

10:40-11:00

11:00-11:20

Th-O2-2

Annealing behavior of Cat-CVD p-type a- Si for c-Si surface passivation and its
superiority over PECVD counterparts
H.T.C. Tu*, K. Ohdaira, H. Matsumura*Japan Advanced Institute of Science and Technology (JAIST), Japan

Improvement in the passivation quality of Cat-CVD SiNx films on crystalline Siat room temperature
J. Miyaura, K. Ohdaira**Japan Advanced Institute of Science and Technology (JAIST), Japan11:20-11:40

Th-O2-3Tunnel oxide passivated contact for crystalline silicon solar cells using hot-wirechemical vapor deposition
S. Li*, M. Pomaska, J. Hoß, W. Wang, J. Lossen, F. Pennartz, M. Nuys, F.
Finger, U. Rau, K. Ding
*Forschungszentrum Jülich, Germaney

11:40-12:00

Closing Remarks

10th International Conference on
Hot Wire (Cat) & Initiated Chemical Vapor Deposition(HWCVD10)
Poster session
Tuesday September 4, 2018 16:20-18:00
Tu-P-01

Oxygen additive effects on decomposition rate of poly(vinyl phenol)-based polymers usinghydrogen radicals produced by a tungsten hot-wire catalyst
M. Yamamoto*, S. Nagaoka, K. Ohdaira, H. Umemoto, H. Horibe*National Institute of Technology, Kagawa College, Japan

Tu-P-02

Removal of carbon contamination on easily-oxidizable-metal coated mirrors for synchrotron
radiation beamline using atomic hydrogen
M. Niibe*, T. Harada, A. Heya, T. Watanabe, N. Matsuo*University of Hyogo, JapanTu-P-03

Role of chamber pressure on crystallinity and composition of silicon films using silane andmethane as precursors in HWCVD technique
R. Madaka, J. Kumari, V. Kanneboina, H.S. Jha, P. Agarwal**Indian Institute of Technology Guwahati, India

Tu-P-04

In situ cleaning of silicon substrate by atomic hydrogen and argon and its application for solarcells
Y. Someya*, K. Shimizu*Nihon University, Japan

Tu-P-05

Passivation of crystalline silicon surfaces with a few µm-sized pyramids by Cat-CVD silicon
nitride films
J. Liu, Y. Wen*, N. Ooyagi, Y. Yamamoto, K. Ohdaira*Japan Advanced Institute of Science and Technology (JAIST), Japan

Tu-P-06

Influence of ITO sputtering on the performance of silicon heterojunction solar cells withCat-CVD amorphous silicon films
T. Konishi, K. Ohdaira**Japan Advanced Institute of Science and Technology (JAIST), Japan

Tu-P-07

Large area HWCVD processes for Si heterojunction solar cells
O. Astakhov, M. Justianto, T. Harig, M. Höfer, V. Sittinger, K. Ding**Forschungszentrum Jülich GmbH, Germaney

Tu-P-08

HWCVD for silicon photonics: a new industrial application
A. Tarazona*, S.Z. Oo, T.D. Bucio, R. Petra, A.Z. Khokhar, V. Mittal, F.Y. Gardes, G.T. Reed,
H.M.H. Chong*University of Southampton, UK

Tu-P-09

Growth of highly nanocrystalline cubic silicon carbide (3C-SiC) thin films prepared by hot wire
chemical vapor deposition technique
H.S. Jha*, P. Agarwal*Indian Institute of Technology Guwahati, India, Gifu University, Japan

Tu-P-10Substrate temperature dependence of SiO2 layer formed on Si(100) by H2O/H2 decomposed
speciesS. Tahara*, K. Fukushima, Y. Katamune, A. Izumi*Kyushu Institute of Technology, Japan

Tu-P-11

Evaluation of composition and electrical characteristics of SiOCN thin films deposited byHWCVD
M. Matsumoto*, H. Tsutsui, Y. Katamune, A. Izumi*Kyushu Institute of Technology, Japan

Tu-P-12

Evaluation of corrosion resistance of SiOCN film by HWCVD method
K. Fukushima*, S. Tahara, Y. Katamune, A. Izumi*Kyushu Institute of Technology, Japan

Tu-P-13

Cu diffusion properties of SiCN films deposited by hot-wire chemical vapor deposition
H. Tsutsui*, S. Hayashida, Y. Katamune, A. Izumi*Kyushu Institute of Technology, Japan

Tu-P-14

Preparation of ZrOxNy film at low temperatures by reactive sputtering assisted by hot-wire
M. Sato*, H. Kitada, M.B. Takeyama*Kitami Institute of Technology, Japan

Tu-P-15

Hot-wire hydrogenation for In-Sn-Zn-O and improvement of the TFT reliability
T. Yanagisawa*, Y. Someya, K. Shimizu*Nihon University, Japan

Tu-P-16

Investigation of diamond growth on SiCN films deposited by hot wire CVD
F. Morishita*, Y. Katamune, A. Izumi*Kyushu Institute of Technology, Japan

Tu-P-17Micro-sized diamond growth using organic phosphorus solution by hot filament chemicalvapor deposition
D. Arikawa*, D. Mori, Y. Katamune, A. Izumi*Kyushu Institute of Technology, Japan

Tu-P-18

Structural evaluation of polycrystalline diamond films grown by hot filament CVD usingorganic phosphorus solutions
D. Mori*, D. Arikawa, Y. Katamune, A. Izumi*Kyushu Institute of Technology, Japan

Tu-P-19

Thermally stable diamond resistors fabricated by hot-filament CVD accompanying metalmasks
S. Suzuki*, S. Ohmagari, H. Kawashima, H. Umezawa*National Institute of Advanced Industrial Science and Technology (AIST), Japan

Tu-P-20

Change in optical transmittance of carbon nanowall by oxygen plasma treatment
K. Tanabe*, H. Yamamoto, Y. Ieda, S. Hanada, S. Yamada, T. Itoh, S. Nonomura*Gifu University, Japan

Tu-P-21

Investigation for large area deposition of carbon nanowall by hot-wire chemical vapor
deposition
T. Itoh*, H. Sobue, K. Hayashi, S. Hanada, H. Yamamoto, S. Yamada, S. Nonomura*Gifu University, Japan

Tu-P-22

Semiconducting properties of nitrogen doped-graphene by in-situ synthesis at 150 oC
Y.-Han*, B.-J. Park, M.-W. Nam, S.-G. Yoon
* Chungnam National University, Korea