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by 2N6027/DSEMICONDUCTOR TECHNICAL DATA   

Silicon Programmable Unijunction Transistors. . . designed to enable the engineer to “program” unijunction characteristics such as
RBB, η, IV, and IP by merely selecting two resistor values. Application includes
thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be usedin special thyristor applications due to the availability of an anode gate. Supplied in an
inexpensive TO-92 plastic package for high-volume requirements, this package isreadily adaptable for use in automatic insertion equipment.
•••••Programmable — RBB, η, IV and IP.
Low On-State Voltage — 1.5 Volts Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current — 10 nA Maximum
High Peak Output Voltage — 11 Volts TypicalLow Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms)

PUTs
40 VOLTS
300 mW

GAKAGK
CASE 29-04(TO-226AA)
STYLE 16MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
RatingSymbolValueUnit

PF
1/θJA3004mWmW/°C*DC Forward Anode CurrentDerate Above 25°C

IT150
2.67mAmA/°C*DC Gate Current

IG±50mA

Repetitive Peak Forward Current
100 µs Pulse Width, 1% Duty Cycle*20 µs Pulse Width, 1% Duty Cycle

ITRM

Non-repetitive Peak Forward Current
10 µs Pulse Width

ITSM

5Amps

*Gate to Cathode Forward Voltage

VGKF

40Volts*Gate to Cathode Reverse Voltage

VGKR–5Volts*Gate to Anode Reverse Voltage

VGAR

40Volts*Anode to Cathode Voltage(1)VAK±40Volts

Operating Junction Temperature Range

TJ–50 to +100°C*Storage Temperature RangeTstg–55 to +150°C*Power Dissipation
Derate Above 25°C

Amps
12

*Indicates JEDEC Registered Data
1. Anode positive, RGA = 1000 ohms
Anode negative, RGA = open

Thyristor
Device Data
Motorola
Motorola, Inc.
1995

1 
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic*Peak Current(VS = 10 Vdc, RG = 1 MΩ)

Fig. No.

Symbol2,9,11IPMin

TypMax

————

1.25
0.08
40.70

20.15
5
1

0.2
0.2
0.2

0.70
0.50
0.35

1.6
0.6
0.6

——
7025
1.5
11818150
150——5025——————

1
310—

µA

2N60272N60282N60272N6028(VS = 10 Vdc, RG = 10 k ohms)*Offset Voltage(VS = 10 Vdc, RG = 1 MΩ)

1VTVolts

2N60272N6028(Both Types)(VS = 10 Vdc, RG = 10 k ohms)*Valley Current(VS = 10 Vdc, RG = 1 MΩ)

1,4,5µA

IV

2N60272N60282N60272N60282N60272N6028(VS = 10 Vdc, RG = 10 k ohms)(VS = 10 Vdc, RG = 200 ohms)

UnitmA*Gate to Anode Leakage Current(VS = 40 Vdc, TA = 25°C, Cathode Open)(VS = 40 Vdc, TA = 75°C, Cathode Open)—IGAOnAdc

Gate to Cathode Leakage Current(VS = 40 Vdc, Anode to Cathode Shorted)

—IGKS

—

550nAdc*Forward Voltage (IF = 50 mA Peak)

1,6VF

—

0.8

1.5Volts*Peak Output Voltage(VG = 20 Vdc, CC = 0.2 µF)

3,7Vo

611—

Volt

Pulse Voltage Rise Time
(VB = 20 Vdc, CC = 0.2 µF)

3tr—4080ns*Indicates JEDEC Registered Data.

FIGURE 1 – ELECTRICAL CHARACTERIZATIONIA+VBIAA

RG

R2* VS + R1 R1) R2 VB

GVAK

R1+VAK+ R1R1)R2R2VA– VP

VSRG

VT = VP – VSVSKVFVVFIGURE 2 – PEAK CURRENT (IP) TEST CIRCUIT

AdjustforTurn-on
Threshold

100k
1.0%

VB
0.01 µF
Scope202Put
UnderTestIV

IFIA

IC – Electrical Characteristics

FIGURE 3 – Vo AND tr TEST CIRCUIT+VB—IP (SENSE)
100 µV = 1.0 nA+
2N5270IP

IGAO

1B – Equivalent Test Circuit forFigure 1A used for electricalcharacteristics testing(also see Figure 2)

1A – Programmable Unijunctionwith “Program” Resistors
R1 and R2+V510 k

16 k

Vo6VR
RG = R/2CC
VS = VB/2(See Figure 1)

vo20 Ω27 k
0.6 Vtrt

R

Motorola Thyristor Device Data TYPICAL VALLEY CURRENT BEHAVIORFIGURE 4 – EFFECT OF SUPPLY VOLTAGE

FIGURE 5 – EFFECT OF TEMPERATURE
500

I V , VALLEY CURRENT (µ A)

IV , VALLEY CURRENT (µ A)

1000

RG = 10 kΩ

100100 kΩ

1 MΩ

RG = 10 kΩ

100100 kΩ
1 MΩ

101051015
VS, SUPPLY VOLTAGE (VOLTS)

520–50FIGURE 6 – FORWARD VOLTAGE
V o , PEAK OUTPUT VOLTAGE (VOLTS)

V F , PEAK FORWARD VOLTAGE (VOLTS)

25TA = 25°C

2.01.00.50.20.10.05
0.020.010.010.02

0.05 0.1
0.2
0.51.0IF, PEAK FORWARD CURRENT (AMP)+1000+25+50+75TA, AMBIENT TEMPERATURE (°C)

FIGURE 7 – PEAK OUTPUT VOLTAGE

105.0–252.0

CC = 0.2 µF

TA = 25°C(SEE FIGURE 3)

2015101000 pF
5.005.005.01015202530VS, SUPPLY VOLTAGE (VOLTS)

3540FIGURE 8PROGRAMMABLE UNIJUNCTION

AECircuit Symbol

Motorola Thyristor Device Data

RTR2PNPNGK+B2A+ R1 ) R2+ R1 R1) R2R BBGηR1R2A

GR1CCKKB1Equivalent Circuitwith External “Program”
Resistors R1 and R2

Typical Application

3 
TYPICAL PEAK CURRENT BEHAVIOR
2N6027
FIGURE 9 – EFFECT OF SUPPLY VOLTAGE AND RG

FIGURE 10 – EFFECT OF TEMPERATURE AND RG
1001050I P , PEAK CURRENT (µ A)

I P , PEAK CURRENT ( µA)

5.03.02.01.0

RG = 10 kΩ0.5100 kΩ

0.31.0 MΩ

0.2

TA = 25°C(SEE FIGURE 2)

20

VS = 10 VOLTS(SEE FIGURE 2)

105.02.01.0

RG = 10 kΩ

0.5100 kΩ
1.0 MΩ

0.20.1
5.0

1015
VS, SUPPLY VOLTAGE (VOLTS)

0.1
–50

20–250+25+50TA, AMBIENT TEMPERATURE (°C)

+75+1002N6028
FIGURE 12 – EFFECT OF TEMPERATURE AND RG

1.0

100.7
0.550
RG = 10 kΩ
100 kΩ

0.30.2

I P , PEAK CURRENT (µ A)

I P , PEAK CURRENT (µ A)

FIGURE 11 – EFFECT OF SUPPLY VOLTAGE AND RG

0.1
0.07
0.05
1.0 MΩ

0.03

TA = 25°C(SEE FIGURE 2)

0.02

41015
VS, SUPPLY VOLTAGE (VOLTS)

1.0
0.50.2

RG = 10 kΩ

0.1100 kΩ

0.05

1.0 MΩ

0.02

0.01
5.0

VS = 10 VOLTS(SEE FIGURE 2)

2.0

200.01–50–250+25+50TA, AMBIENT TEMPERATURE (°C)

+75+100

Motorola Thyristor Device Data 
PACKAGE DIMENSIONS

A

B

R

STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE
3. SOURCEPLFSEATING
PLANEKDX X
GJHVCSECTION X–X1NNNOTES:
1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLEDIN P AND BEYOND DIMENSION K MINIMUM.
DIMABCDFGHJKLNPRVINCHESMIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––

MILLIMETERSMINMAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––

CASE 029–04(TO–226AA)

Motorola Thyristor Device Data5 

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, andspecifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in differentapplications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmlessagainst all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola andare registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
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6◊*2N6027/D*

2N6027/DMotorola Thyristor Device Data