APPLICATION NOTE
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Reading onsemi IGBT Datasheets
AND9068/D
Abstract
The Insulated Gate Bipolar Transistor is a power switch
well suited for high power applications such as motor
control, UPS and solar inverters, and induction heating. If
the application requirements are well understood, thecorrect IGBT can easily be selected from the electricalproperties provided in the manufacturers’ datasheet. Thisapplication note describes the electrical parametersprovided in the onsemi IGBT datasheet.

Table 1. ABSOLUTE MAXIMUM RATINGS
RatingCollector−emitter voltage

Part Number
The part numbering convention for onsemi IGBTs isshown in Figure 1. Many of the device ratings and details aredescribed in the part number and can be understood using
this code.

Unit

600

V

Collector current@ TC = 25°C
@ TC = 100°C

IC

Pulsed collector current,
Tpulse limited by TJmax

ICM

Diode forward current@ TC = 25°C
@ TC = 100°C

IF

Diode pulsed current, Tpulse
limited by TJmax

IFM

60

A

Gate−emitter voltage

VGE

$20

V

Power dissipation@ TC = 25°C
@ TC = 100°C

PD

Short circuit withstand time
VGE = 15 V, VCE = 400 V, TJ
v +150°C

tSC

10

ms

Operating junction
temperature range

TJ−55 to+150°C

Storage temperature range

Tstg−55 to+150°C

Lead temperature forsoldering, 1/8” from casefor 5 seconds

TSLD

260

°C

30
15
60

30
15

130
55

A

A
A

W

Collector−Emitter Voltage, VCES

Brief
This section provides a description of the device and lists
its key features and typical applications.

The maximum rated voltage to be applied between thecollector and emitter terminals of the device is specified toprevent the device from entering avalanche breakdown anddissipating excessive energy in the device. The avalanche
breakdown voltage varies with temperature and is at its
minimum at low temperature. The breakdown voltage of thedevice is designed to meet the minimum voltage rating at−40°C.

Absolute Maximum Ratings
The absolute maximum ratings shown in Table 1 are
typical for an IGBT. This table sets the limits, both electricaland thermal, beyond which the functionality is no longer
guaranteed and at which physical damage may occur. The
absolute maximum rating does not guarantee that the device
will meet the data sheet specifications when it is within that
range. The specific voltage, temperature, current and otherlimitations are called out in the Electrical Characteristics
table.

January, 2022 − Rev. 1

Value

VCES

Stresses exceeding those listed in the Maximum Ratings tablemay damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur
and reliability may be affected.

Figure 1. onsemi IGBT Part Numbering Key© Semiconductor Components Industries, LLC, 2012

SymbolCollector Current, IC

The maximum collector current is defined as the amountof current that is allowed to flow continuously into thecollector for a given case temperature, TC, in order to reachthe maximum allowable junction temperature, TJ (150°C).

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Publication Order Number:AND9068/D

AND9068/D
oxide material properties and thickness. The oxide istypically capable of withstanding greater than 80V before
the oxide ruptures, but to ensure reliability over the lifetimeof the device, and to allow for transient overvoltage
conditions in the application, this voltage is limited to well
below the gate rupture voltage.

The collector current can be stated in the following equation
form:
IC +

TJ * TC
R th(j−c)(IGBT) @ V CE(sat)where Rth(j−c) is the thermal resistance of the package andVCE(sat) is the on−state voltage at the specified current, IC.
Since it is the current being sought after, and VCE(sat) isa function of current, the equation must be solved iteratively.
An estimate of the VCE(sat) for a given collector current andtemperature can found in the typical datasheet curves,discussed later.
It is very important to understand that the absolute
maximum collector current is defined based on very specificelectrical and thermal conditions. The capability of the
IGBT to conduct current without exceeding the absolute
maximum junction temperature is highly dependent on thethermal performance of the system, including heatsinks andairflow.

Power Dissipation, PD

The maximum power dissipation is determined using thefollowing equation:
PD +R th(j−c)where Rth(j−c) is the thermal resistance of the package. The
maximum power dissipation is given at case temperatures of
25°C and 100°C, where the maximum junction temperature
is 150°C.
Short Circuit Withstand Time, tsc

The short circuit withstand time describes the ability ofthe device to carry high current and sustain high voltage at
the same time. The device must withstand at least the rated
short circuit withstand time with specified voltages applied
from collector to emitter and from gate to emitter. The
collector−emitter voltage specified for the test will vary
based on the minimum blocking voltage capability of thedevice. The gate−emitter voltage is usually 15 V. The current
flowing through the device under these conditions can far
exceed the rated current, and is limited by the IGBT forward
transconductance, an electrical parameter described below.
The failure mode during this fault condition is usually
thermal in nature.

Pulsed Collector Current, ICM

The pulsed collector current describes the peak collector
current pulse above the rated collector current specificationthat can flow while remaining below the maximum junction
temperature. The maximum allowable pulsed current in turndepends on the pulse width, duty cycle and thermal
conditions of the device.

Diode Forward Current, IF

The diode forward current is the maximum continuous
current that can flow at a fixed case temperature, TC, whileremaining under the maximum junction temperature, TJ.
This is determined in similar fashion to the VCE(sat), above.
IF +TJ * TC

Operating Junction Temperature Range, TJ

TJ * TC

This is the junction temperature range in which the device
is guaranteed to operate without physical or electricaldamage or reduced life expectancy.

R th(j−c)(diode) @ V F

The equation relating IF and VF to the temperature rise is
the same, although the Rth(j−c) for the diode is specified
separately.

Storage Temperature Range, Tstg

This is the temperature range in which the device may be
stored, without electrical bias, without reducing the life
expectancy of the device.

Diode Pulsed Current, IFM

The pulsed diode current describes the peak diode current
pulse above the rated collector current specification that canflow while the junction remains below its maximum
temperature. The maximum allowable pulsed current in turndepends on the pulse width, duty cycle and thermal
conditions of the device.

Lead Temperature for Soldering, TSLD

The maximum allowable soldering temperature is limitedby the thermal conduction from the leads to the junction anddie attach regions of the device. The maximum leadtemperature is also dependent on the duration for which thesoldering iron is applied to the lead. The maximum time forapplication of the heat is specified in the conditions of thisrating.

Gate−Emitter Voltage, VGE

The gate−emitter voltage, VGE describes maximum
voltage to be applied from gate to emitter under fault
conditions. The gate−emitter voltage is limited by the gate

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AND9068/D
THERMAL CHARACTERISTICS
Table 2. TABLE OF IGBT AND DIODE THERMAL CHARACTERISTICS
RatingSymbol

Value

Unit

Thermal resistance junction to case, for IGBT

Rth(j-c)

1.1

°C/W

Thermal resistance junction to case, for DiodeRth(j-c)

2.4

°C/W

Thermal resistance junction to ambient

Rth(j-a)

60°C/W

Thermal Resistance Junction−to−Case, Rth(j−c)

resistance is derated for a square power pulse for reference
in designing pulse width modulated applications and is
described in the graph of thermal resistance for varying
pulse width and duty ratio, shown in Figure 2, below.

The value for the thermal resistance given in Table 2
represents the steady−state thermal resistance under dc
power conditions, applied to the IGBT. The thermal

ZqJC, THERMAL RESPONSE

10

1

0.1

DUTY CYCLE = 0.5
0.2
0.1
0.05
0.02
0.01

SINGLE PULSE

0.01

0.001
0.000001

Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.00001

0.0001

0.001

0.01
0.1
PULSE TIME (s)

1

10

100

1000

Figure 2. IGBT Transient Thermal Response Curve for Varying Duty Ratio

Electrical Characteristics

For a copackaged device such as the NGTB15N60EG thethermal resistance from the junction to case is specified
separately for the IGBT and the diode.

Static Characteristics

The static, or dc, electrical characteristics are shown in
Table 3.

Thermal Resistance Junction−to−Ambient, Rth(j−a)

This is the entire thermal resistance from the siliconjunction−to−ambient.
Table 3. IGBT STATIC ELECTRICAL CHARACTERISTICS
Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Collector−emitter breakdown voltage,gate−emitter short−circuited

VGE = 0 V, IC = 500 mA

V(BR)CES

600

−

−

V

Collector−emitter saturation voltage

VGE = 15 V , IC = 15 A
VGE = 15 V , IC = 15 A, TJ = 150°C

VCEsat

−
−

1.7
2.1

1.95
2.4

V

VGE = VCE , IC = 250 mA

VGE(th)

4.5

6.5

V

VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C

ICES

−
−

10
−

−
200

mA

Gate leakage current, collector−emitter
short−circuited

VGE = 20 V, VCE = 0 V

IGES

−

−

100

nA

Forward Transconductance

VCE = 20 V, IC = 15 A

gfs

−

10.1

−

S

STATIC CHARACTERISTIC

Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−emitter
short−circuited

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AND9068/D
Collector−Emitter Breakdown Voltage, V(BR)CES

VCE(sat). This chart shows the IC dependence on VCE forvarious gate−emitter voltages. The datasheet contains
output characteristics for TA = −40, 25, and 150°C.

This is the minimum off−state forward blocking voltage
guaranteed over the operating temperature range. It is
specified with the gate terminal tied to the emitter witha specified collector current large enough to place the device
into avalanche.

ICE, COLLECTOR CURRENT (A)60

Collector−Emitter Saturation Voltage, VCE(sat)

VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)VCE(sat) is an important figure of merit, since it is directly
related to the conduction losses of the device. This is thevoltage drop from collector to emitter for a specified gate
voltage and collector current. Both a typical value anda maximum value are specified in the electrical table forboth 25°C and 150°C.
In addition to the electrical limits in the table, thedatasheet includes a graph describing the dependence ofVCE(sat) on temperature, as shown in Figure 3. The graphdescribes the typical part and does not guarantee
performance, but it can be used as a starting point todetermine the VCE(sat) for a given temperature. The curves
are given for VGE = 15 V and various collector currents.

50
VGE = 17 V

40

13 V

15 V
30

11 V

20
10

9V
7V

0
0

1
2
3
4
5
6
7
8
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)9Figure 4. Graph of the Output Characteristics of the
IGBT at 255C

The characteristic curves and typical relationships should
never be substituted for worst case design values. Good
design practices and board−level design evaluation are
critical for a reliable system.

3.5
3
IC = 30 A

2.5

Gate−Emitter Threshold Voltage, VGE(th)This parameter describes the gate to emitter voltage
required for a specified amount of collector current to flow.
This defines the gate to emitter voltage at which the device
enters the on−state. Typically this test is based on a collector
current flow proportional to the die size.

IC = 15 A

2
1.5
1

TA = −40°C

IC = 5 A
IC = 10 A

Collector−Emitter Cut−off−Current, ICES

0.5
0−60 −40 −20

0

20

40

60

This specifies the leakage current one can expect in theoff−state forward blocking mode. It is specified at the
maximum rated blocking voltage, VCES with thegate−to−emitter voltage equal to zero volts. The maximum
allowable value of leakage current occurs at the maximum
junction temperature.

80 100 120 140160

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Graph of the Temperature Dependence ofVCE(sat)The VCE(sat) values in the electrical parameter table are
only given for VGE = 15 V. If the gate of the IGBT is being
driven by a different voltage, the output characteristics
shown in Figure 4 can also be useful in approximating theGate Leakage Current, IGES

The absolute maximum value of gate leakage current istypically specified at a gate voltage of 20 V while thecollector and emitter are grounded.

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AND9068/D
Forward Transconductance, gfs

This is the amount of change in collector current for an
incremental change in the gate to emitter voltage, measuredin Siemens (or Mhos). It is specified at the room temperature
rated current of the device, and typically with the device infull saturation, where a further increase in collector−emitter
voltage no longer leads to an additional increase in collector
current. A typical collector−emitter voltage used for this test
is 20 V. Figure 5 illustrates the gfs measurement.

Figure 5. Illustration of the Measurement of IGBT gfs
Dynamic Characteristics
Table 4. IGBT Dynamic Electrical Characteristics
Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

VCE = 20 V, VGE = 0 V, f = 1 MHz

Cies

−

2600

−

pF

Output capacitance

Coes

−

64

−

Reverse transfer capacitance

Cres

−

42

−

DYNAMIC CHARACTERISTIC
Input capacitance

Gate charge total

VCE = 480 V, IC = 15 A, VGE = 15 V

Qg

80

Gate to emitter charge

Qge

24

Gate to collector charge

Qgc

33

10000

C, CAPACITANCE (pF)

The dynamic electrical characteristics which include
device capacitances and gate charge are given in theelectrical table, as shown in Table 4.
IGBT capacitances are similar to those described for
power MOSFETs. The datasheet describes the measurable
terminal capacitances, Cies, Coes, and Cres. They are
specified in the electrical table at a fixed collector bias
voltage; however, the capacitances are voltage dependant,
as can be seen in Figure 6. The capacitances specified on thedatasheet are convenient and easily measured. They relate to
the pin to pin capacitances shown in Figure 7 and described
below.

VGE = 0 V,
f = 1 MHz

nC

Cies

1000

100
Coes
Cres
10
0

10

20

30

40

50

60

70

80

90

100

VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)Figure 6. IGBT Capacitance versus Collector−Emitter
Voltage Showing Voltage Dependance of Coes andCreswww.onsemi.com
5AND9068/D
Qg is the total charge required on the gate to raise VGE toa specified gate voltage. onsemi devices are specified at
VGE_=_15_V.

Figure 7. Pin−to−pin Capacitances of the IGBTC ies + C ge ) C gc with C ce shorted
C oes + C gc ) C ce
C res + C gc
Input Capacitance, Cies

Figure 8. Theoretical Gate Charge Curve showing
VGP, QG, QGE, and QGC

The input capacitance is made up of the parallel
combination of gate−emitter and gate−collector
capacitances, when the collector and emitter are tied
together. The gate−emitter capacitance is constant, as it
consists mainly of the metal−oxide−semiconductor
capacitance. The gate−collector capacitance is
a combination of a fixed oxide capacitor and a p−n junction
capacitor. This results in a voltage dependence that isslightly more complex than that of a p−n junction.

Gate to Emitter Charge, Qge

Qge is the amount of charge required to reach the plateau
voltage VGP. This charge contributes to turning on the MOS
channel, at which time the collector−emitter voltage begins
to transition from high to low voltage. The level of VGP isdependent on the load current being switched and can beapproximated by determining the VGS that corresponds tothe switching current level from the transconductancecurves in Figure 5.

Output Capacitance, CoesThe output capacitance is formed by the parallel
combination of the gate−collector and collector−emitter
capacitances. As mentioned above, the gate−collector
capacitance is voltage dependant. This is also true for thecollector−emitter capacitance. The voltage dependence ofthe collector−emitter junction is that of a p−n junction.

Gate to Collector Charge, Qgc

Qgc is the amount of charge required to charge the junction
capacitor while the voltage from collector to emitter isdecreasing in the transition between the off−state andon−state. This plateau corresponds to the charging of what
is also known as the Miller capacitance.

Transfer Capacitance, Cres

The transfer capacitance is composed only of thegate−collector capacitance. Its role in the device operationis critical, as it provides negative feedback between thecollector and the gate. This capacitance is responsible for theplateau on the gate charge curve. The change incollector−emitter voltage forces a current through Cres
which reduces the gate drive current while the collector
voltage is changing.

Switching Characteristics

The IGBT switching characteristics are of great
importance because they relate directly to the switchingenergy losses of the device. Switching losses can besubstantial, especially at higher frequencies and increasing
temperature, where the switching losses increase.
When voltage is applied to the gate, the input capacitancemust first be charged to the threshold voltage, VGE(th). This
leads to a delay (td(on)) before the IGBT collector current
begins to flow. Once the collector current begins to flow, thedepletion layer that blocks the voltage during the off−state
begins to collapse. The voltage drops to the on−state voltage
drop, VCE(sat). This is illustrated in Figure 9.
During turn−off, the gate voltage is reduced to zero andthe opposite occurs. The channel for the MOSFET current
is closed and the current begins to drop abruptly. The voltage

Gate Charge, Total, Qg

Input capacitance is useful, but in terms of gate drive
design, the more important figure of merit is the gate charge.
It is used to size the gate drive components and predict
switching losses in the driver. To measure gate charge the
IGBT gate is driven with a current and the gate voltagechange is monitored versus time. The resulting gate voltage
versus gate charge curve is shown in Figure 8 for a constantcurrent gate drive signal.

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AND9068/D
begins to rise from VCE(sat) as the charge due to current flowis removed. The voltage across the device reaches the supply
voltage, and minority carriers that remain in the device afterturn−off cause a tail current that continues to flow. This is
illustrated in Figure 10.

The switching characteristics are given in the electricalparametric table for TJ = 25 and 150°C. These are shown in
Table 5.

Table 5. INDUCTIVE SWITCHING ELECTRICAL CHARACTERISTICS OF THE IGBTParameter

Test Conditions

SymbolMin

Typ

TJ = 25°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V

td(on)

78

tr

30

td(off)

130

Max

Unit

SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
Rise timeTurn−off delay time
Fall timetf

120

Turn−on switching loss

Eon

0.900

Turn−off switching loss

Eoff

0.300

Total switching loss

Ets

1.200

td(on)

76

tr

33

td(off)133

Turn−on delay time
Rise timeTurn−off delay time

TJ = 150°C
VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V

Fall timetf

223

Turn−on switching loss

Eon

1.10

Turn−off switching loss

Eoff

0.510

Total switching loss

Ets

1.610

ns

mJ

ns

mJ

voltage and collector current reach 10% of their final
specified value.
Rise Time, tr

The interval between the time the collector reaches 10%of its specified current value and the time it reaches 90% of
its final value is defined as the rise time.

Turn−on Switching Loss, Eon

The turn−on switching losses are calculated by integrating
the power dissipation (IC x VCE) over the time interval
starting when the collector current reaches 10% of its final
value and ending when the collector−emitter voltage reaches
5% of its peak value.
Turn−off Delay Time, td(off)td(off) is the time delay between the falling edge of the gate
pulse and the falling edge of the collector current. The
measurement is the time between the point at which the gate
voltage falls to 90% of its maximum value and the collector
current reaches 10% of its final specified value.

Figure 9. Turn−on Switching Illustration Showing theDefinitions of the Turn−on Switching Characteristics

Fall Time, tf

The fall time is defined as the time required for thecollector current to drop from 90% to 10% of its initial value.

Turn−on Delay Time, td(on)Turn−off Switching Loss, Eofftd(on) is the time delay between the rising edge of the gate
pulse and the rising edge of the IGBT collector current. The
measurement considers the point at which both the gate

The turn−off switching energy losses are calculated toinclude the overlap of the rising collector−emitter voltage

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7AND9068/D
Total Switching Loss, Ets

and the falling collector current. Because the IGBT isa minority carrier device, the collector current continues toflow after the time where the collector voltage has fully
risen. This residual current, called tail current, eventuallydecays to zero. It is customary to add a fixed length of timeto the end of the turn−off time to capture the energy lost
during the entire tail current. This added time is denoted as
xms in Figure 10.

The total switching losses comprise the sum of theturn−on and turn−off switching losses.
Typical switching time and switching energy loss graphs
are given that describe the dependence of the switching
characteristics on a variety of system variables. The
dependence on junction temperature, collector current,
collector−emitter voltage, and gate resistance are allprovided to aid in the design process.

Diode Characteristics

Figure 11. Copackaged IGBT and Freewheeling
Diode

IGBTs are frequently used in applications where the load
is inductive, such as motor control. These applications are
hard switching and require that the IGBT be in parallel witha freewheeling diode. onsemi offers copackaged IGBT anddiode devices. The diode cathode and IGBT collector areconnected together and the diode anode and IGBT emitterare also connected, as shown in Figure 11. The freewheeling
diode takes the place of the body diode that otherwise exists
in a power MOSFET. For IGBTs that are copackaged witha freewheeling rectifier diode, the datasheet will also include
electrical specifications for the diode, as shown in Table 6.

Figure 10. Turn−off Switching Illustration Showing
the Definitions of the Turn−off Switching
Characteristics
Table 6. ELECTRICAL CHARACTERISTICS OF THE DIODE
Parameter

Test Conditions

SymbolVGE = 0 V, IF = 15 A
VGE = 0 V, IF = 15 A, TJ = 150°C
TJ = 25°C
IF = 15 A, VR = 200 V
diF/dt = 200 A/ms

Min

Typ

Max

Unit

VF

1.6
1.6

1.85

V

trr

270

ns

Qrr

350

nc

Irrm

5

A

trr

350

ns

Qrr

1000

nc

Irrm

7.5

A

DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge

TJ = 125°C
IF = 15 A, VR = 200 V
diF/dt = 200 A/ms

Reverse recovery current

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AND9068/D
Forward Voltage, VF

The forward voltage of the rectifier is measured while the
IGBT gate and emitter terminals are tied together, ensuring
the IGBT is in its off−state. A forcing current enters theemitter terminal and the emitter−collector (anode−cathode)voltage is measured.
Forward voltage is an important parameter in hardswitching applications. VF is specified in the electrical table
for a given current and is specified at TJ = 25 and 150°C. The
datasheet also includes a graph showing the IF−VF
relationship for a typical part at TJ = −40, 25, and 150°C, as
shown in Figure 12.
35
−40°C

IF, FORWARD CURRENT (A)

30
25
20

25°C

Figure 13. Diode Reverse Recovery Illustration
Showing the Definitions of the Reverse Recovery
Characteristics

15
150°C

10
5

Reverse Recovery Charge, Qrr

0
0

0.5

1
1.5
VF, FORWARD VOLTAGE (V)2

The amount of charge that is recovered from the diodeduring turn−off is referred to as reverse recovery charge, Qrr.
It is calculated by taking the integral of the reverse recovery
current over the time period, trr.

2.5

Figure 12. Diode Forward Characteristic Curves for
TJ_=_−40, 25, and 1505C

Reverse Recovery Current, Irrm

Irrm is the peak current reached during diode turn off. Irrm
depends on the initial forward diode current and the rate ofchange of the diode current, dI/dt, used to turn the diode off.

Reverse Recovery Time, trr

The reverse recovery time, trr, defines the time the diodetakes to enter the reverse blocking state after conducting in
the forward direction. It is defined as the length of timerequired for the reverse current to return to 10% of its peak
reverse value (Irrm). It is measured from the point in time
where the diode current crosses zero. The time period islabeled in Figure 13.

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