Power Seminars 2024
Abstracts

Paralleling for SiC MOSFETs, IGBTs & MOSFETs
Presented by Didier Balocco
When power becomes more than one device can handle, paralleling devices can be asolution. In this case, if devices are equal, the current will be split equally.
But what happens if there is a difference between devices?
How are device parameters affected by variations in the production process, small orlarge?
How are current and voltage split between devices?
Using corner models, answers to those questions can be obtained.
Detailed analysis of the switching sequence between devices can be performed.
This session will focus on those issues and will give you some insights.

Driver Solutions for SiC MOSFETs, IGBTs,MOSFETs & GaN HEMT
Presented by Jonathan Harper & Alessandro Maggioni
Starting with simple simulation results using onsemi’s physical models of the EliteSiC
MOSFET family, we will demonstrate a number of topics related to drivers: interferenceof external circuits including the driver from fast dv/dt switching, the effect of high dv/dt
on a half-bridge circuit, the principle of an active Miller clamp, benefits and drawbacks ofusing negative gate drive, benefit of using differential gate drive, how to assess themaximum dv/dt in a circuit, and desaturation detection.
We will then review two different application classes: power supplies and energy
infrastructure, selecting the right type of driver in these two types of application.

Sponsored byPower Seminars 2024
Abstracts

Selecting Efficient Passive Components in SiC
Designs
Presented by Würth Elektronik
The presentation will focus on discussing different passive elements used in power
converters and their advantage compared to different technologies available on themarket, from flat wire inductors to litz and round wire and the importance of the low
common mode transient immunity for driving SiC devices.
A deep dive into power factor correction chokes with the newest flat wire technology
from Würth Elektronik will be presented along with the gate drive transformers used in
auxiliary power supplies.
The importance of flat wire from low DC and AC resistance due to skin and proximity
effect will be studied and an insight into lowering the EMC with proper gate driving
circuit design and low inter-winding capacitance.

Elite Power Simulator
Presented by Didier Balocco
PLECS has become a very popular tool to quickly simulate system loops andperformance. Compared to SPICE base simulations, it uses states and considers
switching losses during the transition. It also gets those losses from tables, also calledmodels.
onsemi has introduced a new tool to automatically generate PLECS models. In order topredict system performance, accurate PLECS models based on SPICE simulations areneeded. The physical and scalable SPICE models created by onsemi are suitable forthat purpose.
There’s even more to consider when obtaining accurate results in the simulation chain
including soft-switching, corner effect and parasitic elements in the switching loop. Thissession will go into detail on the various improvements in modeling & simulations
brought by onsemi and PLECS.
Sponsored byPower Seminars 2024
Abstracts

Intelligent Power Design of a Totem-pole
PFC + LLC 3-kW EliteSiC Power Supply
Presented by Jonathan Harper & Alessandro Maggioni
Totem-pole PFC stages improve the efficiency and power density of AC power supplies
by removing the bulky and lossy bridge rectifier. Further improvements in efficiency
over all load conditions requires high performance intelligent power control of thetotem-pole PFC stage, the LLC stage and the secondary side rectification circuit; theuse of high performance SiC MOSFETs in the totem-pole and PFC stage; and the useof high-performance medium voltage MOSFETs in low inductance packaging.

We will review our 3-kW totem-pole PFC + LLC power supply design, highlighting
specific design features which drive the efficiency of this solution higher without theneed to use user-programmable DSP solutions.

FS7 IGBT and T10 LV+MV Silicon MOSFET
Technology Overview
Presented by Didier Balocco
onsemi has introduced two new generations for silicon based MOSFETs and IGBTs.
In this session, we will review the advantages and performance for Field Stop 7 IGBTs
and T10 low/medium voltage MOSFETs and how they compare to the already excellent
performance of prior generations.
We will also assess how the devices can be used in different applications.

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