進化する薄膜の最新技術とエレクトロニクスにおける応用― 太陽電池、燃料電池から有機ELにも ―2009年9月発行
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目次

第 １章 はじめに ························································································································· 1
第Ⅰ部[薄 膜 技 術 の 最 新 動 向 ]第 ２章 薄 膜 作 製 技 術 の最 新 動 向 ······················································································· 2
２.１ 乾 式 法 (物 理 的 薄 膜 作 製 技 術 、化 学 的 気 相 薄 膜 作 製 技 術 ) ············································· 2
２.１.１ スパッタリング ················································································································ 2
１ ボックス回 転 型 多 元 対 向 スパッタ ··············································································· 2２ 傾 斜 回 転 ECRスパッタ ································································································ 3３ コンビナトリアルスパッタ ······························································································ 3
４ 高 周 波 重 畳 直 流 スパッタ ··························································································· 4
５ 誘 導 結 合 プラズマ支 援 型 アンバランスマグネトロン・スパッタ ······································ 4
６ 非 平 衡 スパッタ ··········································································································· 5
７ 樹 脂 をターゲットとしたスパッタリング ··········································································· 5
８ 後 処 理 としての高 速 酸 化 法 ······················································································· 6
２.１.２ プラズマ応 用 成 膜 法 (CVD、PVD) ················································································ 6
１ クラスター制 御 プラズマCVD ······················································································· 6
２ 異 方 性 プラズマCVD ·································································································· 7
３ プラズマ重 合 ·············································································································· 8
４ 大 気 圧 プラズマCVDによる微 結 晶 Si薄 膜 の成 膜 ······················································ 10
５ トライボマイクロプラズマによるコーティング法 ······························································ 11
２.１.３ アーク蒸 着 ···················································································································· 12
１ T字 状 フィルタードアーク蒸 着 法 ················································································· 12
２ シャンティングアーク ···································································································· 13
２.１.４ イオンビーム利 用 成 膜 ·································································································· 13
１ ガスクラスターイオンビーム装 置 （GCIB) ····································································· 13
２ 磁 界 励 起 型 イオンプレーティング(MEP-IP法 ) ···························································· 14
３ 中 性 ビーム銃 ·············································································································· 14
４ シリコンナノブロック薄 膜 生 成 システム ········································································ 15
２.１.５ レーザー利 用 成 膜 、パルスレーザー堆 積 法 (Pulse Laser Deposition：PLD法 ) ········ 15
１ PLD装 置 の改 良 と成 膜 ······························································································ 16
２ フェムト秒 レーザーCVD ······························································································ 16
３ レーザー・イオンビーム複 合 成 膜 装 置 ········································································ 16
４ PLD法 の応 用 ············································································································· 16
５ UVレーザーアブレーションによる機 械 的 効 果 の有 限 要 素 モデル ······························ 18
２.１.６ 分 子 線 エピタキシー（MBE) ··························································································· 18
１ アンモニアMBEによるAlGaInN薄 膜 の形 成 ······························································· 18
２ InGaN量 子 ドットの形 成 ······························································································ 18－i－３ 酸 化 亜 鉛 系 半 導 体 材 料 薄 膜 の形 成 ········································································· 19
４ Fe 3 Si/Ge薄 膜 の形 成 ································································································· 19
５ ZnO薄 膜 の形 成 ········································································································· 20
２.１.７ 真 空 蒸 着 ······················································································································ 20
１ Alq3の真 空 蒸 着 薄 膜 ································································································ 20
２ 有 機 分 子 の蒸 着 ········································································································ 20
３ 蒸 着 重 合 ···················································································································· 21
４ 複 合 成 膜 装 置 ············································································································ 23
２.１.８ 原 子 層 堆 積 法 （Atomic Layer Deposition：ALD法 ） ·················································· 23
１ ALD成 膜 装 置 の構 造 改 良 ························································································· 24
２ ALD成 膜 時 の前 処 理 時 間 の最 適 化 ········································································· 25
３ 液 晶 装 置 の製 造 ········································································································ 25
４ 光 学 用 多 層 薄 膜 の形 成 方 法 ····················································································· 26
５ MOS構 造 縦 型 量 子 ドットのAl 2 O 3 絶 縁 膜 形 成 方 法 ··················································· 26
６ 分 子 層 堆 積 法 （Molecular Layer Deposition : MLD法 ） ············································ 26
２.１.９ 触 媒 化 学 気 相 成 長 法 (Cat-CVD法 ) ············································································· 26
１ 高 速 堆 積 技 術 、バッファー層 形 成 技 術 ····································································· 27
２ 成 膜 温 度 の低 温 化 対 策 ···························································································· 27
２.１.１０ ガスデポジション法 (GD法 ) ························································································· 28
１ GD装 置 ······················································································································ 28
２ 高 分 子 フィルム基 材 への金 属 薄 膜 形 成 ···································································· 28
３ 2重 ノズル型 粒 子 噴 射 法 ···························································································· 29
２.１.１１ ミストCVD法 (Mist-CVD法 ) ························································································ 30
２.１.１２ エレクトロスプレーデポジション法 (ESD法 ) ································································· 30
２.２ 湿 式 法 ································································································································ 32
２.２.１ コーティング ··················································································································· 32
１ ディップコート ·············································································································· 32
２ 加 水 分 解 を伴 う溶 液 プロセス ····················································································· 33
３ コート液 のロングライフ化 ····························································································· 33
４ 生 分 解 性 高 分 子 のスピンコート ·················································································· 34
５ ディッピング装 置 ········································································································· 34
２.２.２ 印 刷 法 ·························································································································· 35
１ インクジェット法 ··········································································································· 35
２ インクジェット法 の改 良 ································································································ 36
３ パターン化 単 分 子 膜 上 への高 分 子 薄 膜 の位 置 選 択 的 形 成 ···································· 37
４ インクジェット法 による酸 化 物 超 伝 導 膜 の形 成
５ 印 刷 システムへの応 用························································ 38····························································································· 38

６ マイクログラビア法 ······································································································· 39
７ マイクロコンタクトプリント法 ·························································································· 40－ii－

２.２.３ ラングミュア・ブロジェット法 (Langmuir Blodgett：LB法 ） ·············································· 41
１ 2種 類 材 料 の混 合 と逐 次 成 膜 の比 較 ········································································ 41
２ 高 分 子 界 面 活 性 剤 を利 用 したLB膜 の安 定 性 ·························································· 42
３ LB膜 成 膜 後 の自 己 再 構 築 (インターカレーション) ····················································· 42
２.２.４ 交 互 積 層 法 (Layer by Layer法 ：LbL法 ) ····································································· 42
１ LbL法 の装 置 の開 発 とその応 用 ················································································· 42
２ スピンコート支 援 交 互 積 層 法 ····················································································· 43
３ コア－シェル粒 子 膜 の作 製 ························································································ 43
４ 疎 水 性 多 層 超 薄 膜 、ハイブリッド中 空 粒 子 の作 製 ···················································· 44
５ インシュリンを含 む薄 膜 の調 製 およびそのpH応 答 性 分 解 ·········································· 45
６ 多 孔 性 薄 膜 の作 製 とその評 価 ··················································································· 46
７ キトサンとアルギン酸 の交 互 積 層 膜 の作 製 ································································ 46
８ イオン液 体 を含 む複 合 膜 の作 製 ················································································ 46
９ BioLbL法 ··················································································································· 47
２.２.５ ゾル－ゲル法 ················································································································ 48
１ 酸 化 インジウム薄 膜 成 膜 時 の熱 処 理 温 度 の影 響 ······················································ 48
２ バインダーを使 用 しない機 能 紙 の作 製 ······································································ 48
３ シリカ－酸 化 チタン系 薄 膜 の作 製 ·············································································· 49
４ ポリイミド(PI)/Al 2 O 3 のin situ重 合 混 合 割 合 と特 性 との関 係 ······································ 50
５ 流 動 界 面 ゾル－ゲル法 ······························································································ 50
６ ゲル－ゾル法 による微 粒 子 合 成 法 (参 考 ) ·································································· 51
２.２.６ 液 相 析 出 法 (LPD法 ) ····································································································· 52
１ 液 相 析 出 法 による薄 膜 作 製 例 ··················································································· 52
２ 金 属 酸 化 物 3次 元 構 造 体 の作 製 ··············································································· 52
３ 超 撥 水 性 TiO 2 薄 膜 の作 製 ························································································· 53
４ 低 温 成 膜 としての酸 化 亜 鉛 薄 膜 の作 製 ···································································· 53
２.２.７ 重 合 技 術 (電 解 重 合 、グラフト重 合 法 、ポリマーブラシなど) ·········································· 54
１ 電 解 重 合 ···················································································································· 54
２ グラフト重 合 、ポリマーブラシ ······················································································· 57
２.３ 大 量 生 産 への対 応 ············································································································· 60
２.３.１ 大 型 スパッタリング装 置 ································································································ 60
２.３.２ プラズマCVD（PCVD）の大 面 積 化 ··············································································· 62
１ 誘 導 結 合 型 (ICP) ······································································································· 62
２ マルチ内 部 アンテナ方 式 大 面 積 誘 導 結 合 型 プラズマ ··············································· 62
３ マイクロ波 励 起 超 低 電 子 温 度 高 密 度 プラズマ装 置 ··················································· 62
４ 反 応 性 プラズマ蒸 着 法 ······························································································· 63
２.３.３ ロールツーロール触 媒 気 相 成 長 法 (Cat-CVD)装 置 ····················································· 63
２.３.４ 大 型 ALD成 膜 装 置 ······································································································· 63
２.３.５ 大 面 積 フィルム基 板 へのマイクログラビア法 による成 膜 ··············································· 64－iii－

第 ３章 薄 膜 材 料 技 術 の最 新 動 向 ······················································································· 65
３.１ 金 属 薄 膜 ····························································································································· 65
３.１.１ 金 薄 膜 ·························································································································· 65
１ 金 ナノ粒 子 薄 膜 ········································································································· 65
２ 半 球 状 金 属 薄 膜 ········································································································ 66
３ チオール単 分 子 膜 で保 護 された金 クラスター ····························································· 66
４ 貴 金 属 ナノシート ········································································································ 67
３.１.２ 鉄 薄 膜 ·························································································································· 68
３.１.３ Ni薄 膜 ··························································································································· 69
３.１.４ Co、Cu薄 膜 ·················································································································· 69
３.１.５ Ni、Cu薄 膜 ··················································································································· 70
３.１.６ Ti-Ni-Cu三 元 系 形 状 記 憶 合 金 薄 膜 ············································································ 70
３.２ 金 属 化 合 物 、無 機 化 合 物 の薄 膜 ······················································································· 71
３.２.１ 酸 化 物 ナノシート ··········································································································· 71
１ ナノ超 薄 膜 誘 電 体 ······································································································ 71
２ ナノシートシード層 ······································································································ 72
３ 強 酸 特 性 のナノシート ································································································· 73
４ 配 向 積 層 薄 膜 ············································································································ 74
５ 発 光 ナノシート ············································································································ 74
６ 酸 化 物 ナノシートから電 子 材 料 の創 製 ······································································ 76
７ モンモリロナイト系 ······································································································· 76
８ BaTiO 3 のナノシート ···································································································· 77
３.２.２ 各 種 金 属 化 合 物 、無 機 化 合 物 ···················································································· 77
１ Mn、Mg化 合 物 ··········································································································· 77
２ SiO 2 ···························································································································· 79
３ TiO 2 ···························································································································· 81
４ ZnO ···························································································································· 83
５ In 2 O 3 ··························································································································· 88
６ 酸 化 タングステン ········································································································ 92
７ 酸 化 タンタル、酸 化 ニオブ ·························································································· 93
３.２.３ 多 成 分 薄 膜 ·················································································································· 94
１ C12A7薄 膜 ················································································································ 94
２ BaBiO 3 薄 膜 ··············································································································· 95
３ BaZrO 3 薄 膜 ··············································································································· 95
４ Li 4 Ti 5 O 1 2 薄 膜 ············································································································ 95
５ FeGaO 3 薄 膜 ··············································································································· 96
６ Eu含 有 HfO 2 薄 膜 ······································································································· 97
７ 酸 化 チタン－ジルコニア複 合 膜 ·················································································· 98
８ BaO-TiO 2 -GeO 2 薄 膜 ·································································································· 98
９ BiTiFeO薄 膜 ·············································································································· 98－iv－

３.３ 炭 素 系 薄 膜 ······················································································································· 99
３.３.１ ダイヤモンドライクカーボン薄 膜 (Diamond Like Carbon：DLC薄 膜 ) ························ 99
１ ペットボトル内 面 コーティングDLC膜 ········································································· 99
２ 大 型 部 材 用 DLCコーティング ··················································································· 99
３ 大 型 、複 雑 形 状 DLCコーティング ············································································· 100
４ 高 密 度 、高 硬 度 DLC薄 膜 (スーパーDLC) ······························································· 100
５ 導 電 性 DLC ·············································································································· 101
６ フッ素 添 加 DLC ········································································································ 102
７ 低 温 化 成 膜 と基 板 との密 着 性 改 良 ········································································· 103
３.３.２ ダイヤモンド系 薄 膜 ····································································································· 103
１ 超 伝 導 気 相 成 長 ダイヤモンド薄 膜 ··········································································· 103
２ ナノクリスタルダイヤモンド薄 膜 ················································································· 104
３ 金 属 微 粒 子 修 飾 ダイヤモンド材 料 ··········································································· 106
４ ダイヤモンド薄 膜 を用 いたバイオチップ ···································································· 107
３.３.３ カーボンナノチューブ（CNT）系 薄 膜 ············································································ 107
１ 乾 式 製 法 によるCNT薄 膜 ························································································· 107
２ 湿 式 製 法 によるCNT薄 膜 ························································································· 108
３ 低 コストCNT薄 膜 ······································································································ 108
４ 導 電 性 の大 きい単 層 カーボンナノチューブ(SWCNT)とその薄 膜 ····························· 108
５ 金 属 性 単 層 CNT薄 膜 ······························································································ 109
６ 配 向 制 御 CNT薄 膜 ·································································································· 109
７ 金 属 内 包 CNT ·········································································································· 110
３.３.４ 複 合 系 炭 素 薄 膜 ········································································································· 111
１ Pt-C薄 膜 ·················································································································· 111
２ CNT分 散 ポリイミド薄 膜 ···························································································· 111
３ 単 層 CNT分 散 TiO 2 薄 膜 ··························································································· 112
４ グラフェン－CNT薄 膜 ······························································································· 112
５ 窒 化 炭 素 薄 膜 ·········································································································· 113
６ 炭 化 ケイ素 薄 膜 ········································································································ 114
７ 炭 化 鉄 ······················································································································ 115
３.４ 有 機 薄 膜 ··························································································································· 116
３.４.１ 低 分 子 、オリゴマー ····································································································· 116
１ ルブレン ···················································································································· 116
２ シアニン色 素 、アゾ色 素 ··························································································· 117
３ ジアリールエテン（DAE） ··························································································· 118
４ チオフェン、チオール系 ···························································································· 122
５ ペンタセン系 ············································································································· 125
６ フタロシアニン、ポルフィリン ······················································································ 126
７ オリゴマー、デンドリマー ···························································································· 128－v－

３.４.２ ポリマー ······················································································································· 129
１ ポリオレフィン系 ········································································································ 129
２ ポリスチレン系 ··········································································································· 130
３ ポリアミド系 ··············································································································· 131
４ 熱 硬 化 系 ·················································································································· 132
５ フッ素 系 ···················································································································· 134
６ アクリル系 ················································································································· 134
７ ポリウレタン系 ··········································································································· 136
８ ポリマー各 種 ············································································································· 136
９ 生 分 解 性 、天 然 高 分 子 系 ························································································ 138
３.４.３ ブロックコポリマー ········································································································ 141
１ ブロックコポリマーのモルフォロジー ··········································································· 141
２ ブロックコポリマーの配 向 技 術 ·················································································· 147
３ ブロックコポリマーの応 用 ·························································································· 152
３.５ 複 合 薄 膜 ··························································································································· 157
３.５.１ 有 機 －無 機 ················································································································· 157
１ 有 機 －シリカ薄 膜 ····································································································· 157
２ その他 の有 機 －無 機 系 薄 膜 ···················································································· 162
３.５.２ 有 機 －金 属 ················································································································· 166
１ 有 機 －貴 金 属 ·········································································································· 166
２ 有 機 －卑 金 属 ·········································································································· 169
３.５.３ 炭 素 系 複 合 薄 膜 ········································································································· 170
１ 炭 素 系 －有 機 ·········································································································· 170
２ 炭 素 系 －無 機 ·········································································································· 173
３ 炭 素 系 －金 属 ·········································································································· 174
３.５.４ 無 機 －金 属 ················································································································· 176
１ Ti-TiO 2 薄 膜 ············································································································· 176
２ アルミナ表 面 層 にパラジウム ····················································································· 176
３.５.５ 有 機 －有 機 (高 分 子 ブレンド系 ) ·················································································· 177
１ ポリ－L－乳 酸 （PLLA）－ポリ酢 酸 ビニル(PVAc) ····················································· 177
２ ポリマーブレンド薄 膜 の表 面 ····················································································· 178
３ パルプ－ポリオキサレート ·························································································· 179
４ 高 分 子 ブレンド薄 膜 の相 分 離 と脱 濡 れ（dewetting、はじき） ···································· 179
５ Polyethylene oxide(PEO)－Polystyrene(PS)のブレンド ··········································· 179

第 ４章 薄 膜 の性 能 、加 工 技 術 の最 新 動 向 ·································································· 181
４.１ 薄 膜 の性 能 ····················································································································· 181
４.１.１ 力 学 特 性 、密 着 性 ···································································································· 181
１ ポリスチレン薄 膜 の動 的 粘 弾 性 ·············································································· 181
２ ポリカーボネート基 板 上 のZnO膜 の物 性 評 価 ························································ 182－vi－

３ ポリエステルフィルム基 板 上 の金 属 薄 膜 の物 性 、密 着 性 ······································· 182
４ 微 小 材 料 試 験 によるポリイミド薄 膜 の力 学 特 性 ····················································· 182
５ ポリイミドフィルム基 板 上 のa-C膜 の密 着 性 ····························································· 182
４.１.２ ガスバリア性 ·············································································································· 183
１ 無 機 系 ···················································································································· 183
２ 炭 素 系 ···················································································································· 188
３ 有 機 系 ···················································································································· 189
４.１.３ 濡 れ性 脱 濡 れ性 ····································································································· 190
１ 親 水 性 ···················································································································· 190
２ 撥 水 性 ···················································································································· 191
３ 脱 濡 れ性 ················································································································ 195
４.１.４ 摩 擦 、摩 耗 特 性 ········································································································ 197
１ 潤 滑 油 中 における窒 化 炭 素 膜 の超 低 摩 擦 現 象 ··················································· 197
２ 水 性 媒 体 での吸 着 ポリエチレンオキシド層 のせん断 挙 動 ······································ 197
３ 機 械 的 耐 久 性 増 強 のためのナノ粒 子 薄 膜 の水 熱 処 理 ········································· 197
４ 荷 電 高 分 子 ブラシ間 の摩 擦 と垂 直 相 互 作 用 力 ···················································· 198
５ 高 摩 擦 表 面 の相 手 面 の粗 さと変 形 の影 響 ···························································· 198
６ 耐 摩 耗 性 イオン性 液 体 超 薄 膜 ·············································································· 199
４.１.５ エレクトロクロミズム、フォトクロミズム ········································································ 199
１ フォトクロミズム ········································································································ 199
２ エレクトロクロミズム ·································································································· 203
４.１.６ 磁性 ······················································································································ 206

１ シリコーン樹 脂 中 のAu/Ni-P中 空 マイクロロッド ······················································ 206
２ (Zn, Cr)Te膜 ··········································································································· 206
３ GaMnAs膜 ············································································································· 206
４ Fe 3 O 4 -Geナノ複 合 膜 ······························································································ 207
５ ポリエチレンナフタレート基 板 にニッケル薄 膜 ························································· 207
６ デンドリマータイプのポリアミドアミン固 定 化 磁 気 高 分 子 複 合 体 ミクロスフェア ········ 208
７ Ge量 子 ドットの磁 気 的 性 質 ···················································································· 208
８ 窒 化 鉄 ················································································································ 209
４.１.７ 超 伝 導 性 ·················································································································· 209
１ 鉄系···················································································································· 209

２ イットリウム系 （YBCO) ····························································································· 210
３ ボロンドープダイヤモンド ························································································· 210
４ MgB 2 系 ·················································································································· 211
５ チタン酸 ストロンチウム単 結 晶 ················································································· 211
４.２ 薄 膜 の加 工 ····················································································································· 212
４.２.１ 薄 膜 へのドーピング ··································································································· 212
１ 無 機 系 薄 膜 ············································································································ 212
２ 炭 素 系 薄 膜 ············································································································ 215－vii－

３ 有 機 系 薄 膜 ············································································································ 217
４.２.２ 薄 膜 成 膜 後 の後 処 理 ······························································································· 219
１ 熱 処 理 、焼 成 、溶 媒 処 理 ······················································································· 219
２ エッチング ··············································································································· 221
４.２.３ 薄 膜 のナノ加 工 、パターン加 工 ················································································· 224
１ レーザーによる加 工 ································································································ 224
２ 電 子 ビーム、イオンビームによる薄 膜 の加 工 ·························································· 228
３ AFMによるナノ加 工 ································································································ 232
４ ナノインプリント ········································································································ 233
４.２.４ 鋳 型 法 ·················································································································· 236
１ ブロック共 重 合 体 を鋳 型 にしたCo/Pd磁 性 体 記 録 膜 ············································ 236
２ ブロック共 重 合 体 薄 膜 からのアスペクト比 可 変 メソ細 孔 性 シリカナノロッドアレイ ······ 237
３ ブロック共 重 合 体 薄 膜 からの高 秩 序 シリカ細 孔 およびストライプの作 製 ················· 238
４ PS-b-PAAの自己会合による高規則性微多孔薄膜の形成とその制御可能表面特性の研究 ······ 239
５ ブロック共 重 合 体 薄 膜 からの無 機 ナノポーラス膜 ··················································· 240
６ ブロック共 重 合 体 の協 同 自 己 集 合 によるTiO 2 ナノ粒 子 ストリング2次 元 アレイ ········ 240
７ 蛍 光 性 CdSeナノ粒 子 の2次 元 アレイ ······································································ 241

第 Ⅱ部 [薄 膜 のエレクトロニクス分 野 への応 用 最 新 動 向 ]第 ５章 絶 縁 膜 ····················································································································· 243
５.１ 低 誘 電 率 膜 (k＜3) ·········································································································· 243
５.１.１ 実 用 化 が進 む層 間 絶 縁 膜 ························································································· 243
半 導 体 MIRAIプロジェクト、日 本 電 気 、東 芝 、ソニー、富 士 通 、三 菱 電 機 、
日 立 製 作 所 、アルバック、旭 硝 子 、旭 化 成 、富 士 フイルム
５.１.２ 開 発 中 の層 間 絶 縁 膜 、低 誘 電 率 材 料 ······································································· 250
大 陽 日 酸 、物 材 研 、Selete、東 京 大 、東 北 大 、九 州 大 、大 阪 大 、
京 都 大 国 際 融 合 創 造 センター、東 工 大 、首 都 大 学 東 京 、日 鉱 工 業 、
日 東 電 工 、日 本 ゼオン、出 光 興 産 、住 友 ベークライト
５.２ 中 程 度 の誘 電 率 膜 (3＜k＜6) ························································································· 257
５.２.１ シリカ薄 膜 ··················································································································· 257
５.２.２ 窒 化 シリコン膜 ············································································································ 259
５.２.３ ポリイミド ····················································································································· 262
５.２.４ 液 晶 配 向 膜 ················································································································ 264
５.３ 高 誘 電 率 膜 (k＝6～数 百 ) ······························································································· 268
５.３.１ ゲート絶 縁 膜 ··············································································································· 268
５.３.２ 容 量 素 子 ···················································································································· 272－viii－

第 ６章 導 電 膜 ····················································································································· 276
６.１ 透 明 導 電 膜 ······················································································································· 276
６.１.１ ITO膜 ·························································································································· 276
１ 研 究 と商 用 化 の実 例 ································································································ 276
２ 転 写 方 式 ·················································································································· 277
３ インクジェット方 式 ····································································································· 278
４ コーティング ·············································································································· 280
５ ドライ方 式 ················································································································· 280
６ スプレーCVD法 ········································································································ 283
７ ITOナノ粒 子 の製 造 技 術 ·························································································· 284
６.１.２ ZnO膜 ························································································································· 286
１ Ga添 加 ZnO(GZO)系 ························································································································· 286
２ Al添 加 ZnO(AZO)系 ································································································ 289
３ ZnO系 ······················································································································ 291
６.１.３ ITO、ZnO膜 のバリエーション ······················································································ 292
１ In-Zn-O系 ················································································································ 292
２ ITO-ZnO積 層 ··········································································································· 293
３ Zn-Mg-Al系 ············································································································· 293
４ 金 ナノ粒 子 固 定 化 ITO ····························································································· 294
６.１.４ ITO、ZnO以 外 の透 明 導 電 膜 ···················································································· 294
１ TiO 2 ·························································································································· 294
２ C12A7(12CaO・7Al 2 O 3 ) ··························································································· 295
３ Mg(OH) 2 -C x ············································································································· 295
４ 鋳 型 法 ·················································································································· 296
５ In 2 O 3 ························································································································· 297
６ CNTによる透 明 導 電 膜 ····························································································· 297
６.１.５ 導 電 性 ポリマーによる透 明 導 電 膜 ············································································· 298
ポリチオフェン系 （PEDOT/PSS）、ポリアニリン系 など
６.２ 一 般 配 線 、ナノ配 線 用 導 電 膜 ·························································································· 303
６.２.１ 一 般 配 線 ···················································································································· 303
１ LSI向 け多 層 配 線 用 Cu配 線 ···················································································· 303
２ 銅 配 線 の銅 表 面 酸 化 膜 の除 去 ··············································································· 303
６.２.２ インクジェットによる配 線 ······························································································ 304
１ 多 層 配 線 基 板 ·········································································································· 304
２ LTCC上 の微 細 配 線 ································································································· 304
３ Ag配 線 ····················································································································· 305
４ 超 微 細 インクジェット ································································································· 305
６.２.３ CNTによる配 線 ·········································································································· 305
１ カーボンナノチューブ・ウェハ ···················································································· 305
２ 多 層 CNT配 線 ·········································································································· 306－ix－

３ CNTビアプロセス ······································································································ 307
４ エラストマー－CNT－イオン液 体 系 ·········································································· 308
６.２.４ 金 属 薄 膜 による配 線 ··································································································· 308
１ 金 ナノ粒 子 薄 膜 のパターン化 ··················································································· 308
２ 金 ナノ粒 子 を種 々の担 体 に担 持 する方 法 ······························································· 309
３ ポリマー基 板 上 への銅 薄 膜 パターンの作 製 ····························································· 309
６.２.５ ナノインプリントによる配 線 ·························································································· 309
６.２.６ DNAによる配 線 ·········································································································· 311
１ 光 ピンセットによるDNA配 線 ····················································································· 311
２ DNA由 来 の透 明 電 極 ······························································································ 311
６.２.７ ナノワイヤーによる配 線 技 術 ······················································································ 312
６.２.８ 自 己 組 織 化 による配 線 ······························································································· 313

第 ７章 無 機 半 導 体 薄 膜 ······································································································· 314
７.１ シリコン(Si)系 半 導 体 膜 ···································································································· 315
７.１.１ 非 晶 質 シリコン(a-Si)の結 晶 化 処 理 ··········································································· 315
１ パルス変 調 レーザー照 射 ························································································· 315
２ 軟 X線 照 射 処 理 ······································································································· 316
３ 熱 プラズマジェットによる結 晶 化 ················································································ 317
４ 熱 プラズマジェット結 晶 化 技 術 の改 良 ······································································ 317
５ 高 周 波 VHF熱 マイクロプラズマジェット ····································································· 318
６ 低 温 プラズマによる結 晶 化 ······················································································· 318
７ ジュール熱 加 熱 による結 晶 化 ··················································································· 318
８ フラッシュランプ照 射 による結 晶 化 ··········································································· 319
７.１.２ 多 結 晶 Siの動 向 ········································································································· 319
１ 多 結 晶 Siの低 温 での大 粒 径 化 と結 晶 欠 陥 低 減 技 術 ·············································· 319
２ Al誘 起 結 晶 化 法 (AIC)法 による多 結 晶 シリコン薄 膜 形 成 ········································ 320
３ ラジカル制 御 プラズマCVDによる結 晶 シリコンの形 成 ·············································· 320
７.１.３ 液 相 法 ························································································································ 320
７.１.４ Si薄 膜 に関 する情 報 ··································································································· 321
１ 極 低 温 でのa-Si合 成 ································································································ 321
２ 薄 膜 素 子 のLEDとしての評 価 ·················································································· 322
７.１.５ 炭 化 ケイ素 (SiC)半 導 体 薄 膜 ······················································································ 323
１ 高 速 のエピタキシャル成 長 技 術 ··············································································· 323
２ ＳｉＣの結 晶 成 長 技 術 、デバイス化 技 術 ···································································· 324
３ SiCダイオード ··········································································································· 324
４ SiCを適 用 したインバータ ·························································································· 324
７.２ ゲルマニウム(Ge)系 半 導 体 膜 ·························································································· 325
７.２.１ 非 晶 質 Geの低 温 固 相 成 長 ························································································ 325
７.２.２ 多 結 晶 Ge薄 膜 の低 温 形 成 ························································································ 325－x－７.２.３ Ge半 導 体 デバイス製 造 方 法 ······················································································ 326
７.２.４ マイクロ波 帯 無 線 通 信 用 SiGe HBT ·········································································· 327
７.３ ガリウム(Ga)系 半 導 体 膜 ·································································································· 327
７.３.１ LED ····························································································································· 327
１ ハイブリッドPPD法 ····································································································· 327
２ 多 結 晶 AlN基 板 上 のInGaN結 晶 ············································································· 328
３ 窒 化 アルミニウムガリウム（AlGaN）系 深 紫 外 高 輝 度 LED ········································ 328
７.３.２ HEMT（High Electron Mobility Transistor） ···························································· 329
１ 低 消 費 電 力 型 高 周 波 デバイスGaN-HEMT ····························································· 330
２ GaN高 耐 圧 デバイス ································································································· 330
３ 電 子 デバイス用 GaN結 晶 の製 法 とHEMT作 製 ························································ 330
４ GaN HEMT増 幅 器 ··································································································· 331
５ 縦 型 構 造 のGaNパワーデバイス ··············································································· 331
７.４ 強 磁 性 酸 化 物 半 導 体 膜 ··································································································· 332
７.４.１ 磁 気 ランダムアクセスメモリー(MRAM) ······································································· 332
７.４.２ スピンデバイス ············································································································· 334
１ スピントロニクス不 揮 発 性 機 能 技 術 プロジェクト ························································ 334
２ 文部科学省 高機能・超低消費電力スピンデバイス・ストレージ基盤技術の開発 ········ 334
３ イルメナイト・ヘマタイト系 薄 膜 ·················································································· 335
４ Ⅳ族 強 磁 性 半 導 体 の創 製 とそのスピンデバイスへの応 用 ······································· 336
７.４.３ 鉄 シリサイド系 磁 性 材 料 ····························································································· 337
７.４.４ 希 薄 磁 性 半 導 体 材 料 (ZnMnSn)As 2 ·········································································· 337
７.４.５ 希 薄 磁 性 半 導 体 材 料 GaMnAs ·················································································· 338
７.４.６ 熱 アシストスピン注 入 技 術 ·························································································· 338
７.４.７ マイクロ波 アシスト磁 化 反 転 ······················································································· 339
７.５ 酸 化 物 半 導 体 膜 ··············································································································· 339
７.５.１ アモルファス酸 化 物 半 導 体 (TAOS) ············································································ 339
１ TAOSトランジスタ ······································································································ 339
２ 透 明 アモルファス半 導 体 TFT ··················································································· 340
３ a-IGZOによる電 子 ペーパー ····················································································· 341
７.５.２ ZnO ····························································································································· 342
１ ZnO薄 膜 トランジスタ ································································································· 343
２ ZnO半 導 体 の改 良 ··································································································· 344
３ 紫 外 線 発 光 ダイオード ······························································································ 345
７.５.３ 抵 抗 変 化 メモリー(ReRAM、RRAM) ·········································································· 346
７.６ 炭 素 (C)系 半 導 体 膜 ········································································································· 347
７.６.１ CNT半 導 体 ················································································································· 347
１ 塗 布 プロセスによるCNTトランジスタ ·········································································· 347
２ 高 純 度 CNTによるトランジスタ ··················································································· 348
３ CNT分 散 ポリマーを用 いた電 界 効 果 トランジスタ ····················································· 348
４ 単 層 カーボンナノチューブのFET ············································································· 349－xi－

７.６.２ グラフェン半 導 体 ········································································································· 349
１ グラフェン薄 膜 の作 製 ······························································································· 349
２ グラフェンによるトランジスタ ······················································································· 349
３ グラフェンFET ··········································································································· 350
７.７ タンパク質 の自 己 組 織 化 を利 用 した量 子 ドット半 導 体 ····················································· 350

第 ８章 有 機 半 導 体 薄 膜 ······································································································· 352
８.１ 有 機 薄 膜 半 導 体 と有 機 薄 膜 トランジスタ ·········································································· 352
８.１.１ 有 機 薄 膜 トランジスタの構 造 ······················································································ 352
８.１.２ 移 動 度 の変 遷 、最 新 性 能 ·························································································· 353
１ 移 動 度 の変 遷 ·········································································································· 353
２ 高 移 動 度 の有 機 トランジスタ ···················································································· 354
３ 有 機 薄 膜 トランジスタ用 材 料 ···················································································· 354
８.１.３ 特 許 出 願 の動 向 ········································································································· 354
８.２ 有 機 半 導 体 材 料 の最 新 動 向 ··························································································· 355
８.２.１ ペンタセンなど炭 素 縮 合 四 ・五 環 系 ············································································ 355
１ 移 動 度 と要 因 の整 理 ································································································ 355
２ 単 結 晶 化 ·················································································································· 356
３ 単 結 晶 トランジスタ ···································································································· 356
４ 塗 布 法 によるトランジスタ ·························································································· 357
５ インクジェット法 によるトランジスタ ·············································································· 357
６ サブミクロンチャンネル長 の有 機 薄 膜 トランジスタ ····················································· 357
７ ペンタセン誘 導 体 の分 子 ワイヤによるトランジスタ ····················································· 358
８ ペンタセンとCuとの界 面 ···························································································· 358
９ 置 換 ペンタセンの合 成 ······························································································ 358
１０ ペンタセン誘 導 体 の合 成 と評 価 －１ ········································································· 359
１１ ペンタセン誘 導 体 の合 成 と評 価 －２ ········································································· 360
１２ ジブチルペンタセン ··································································································· 360
１３ 新 規 縮 合 多 環 芳 香 族 化 合 物 の合 成 と応 用 ···························································· 361
８.２.２ チオフェン、ポリフェニレンビニレン化 合 物 ··································································· 361
１ ケイ素 架 橋 チオフェン ······························································································· 361
２ チオフェン/フェニレンコオリゴマー(TPCO)－１ ························································· 362
３ チオフェン/フェニレンコオリゴマー(TPCO)－２ ························································· 362
４ ターチオフェン、クォータチオフェン ··········································································· 363
５ 末 端 にシアノ基 を有 するチオフェンオリゴマー(CH4T) ·············································· 364
６ テトラチアペンタレン骨 格 (TTP)を有 する化 合 物 ······················································· 364
７ カラムナー液 晶 材 料 ································································································· 365
８ ポリ(3-ヘキシルチオフェン) (P3HT) ·········································································· 365
９ 全 印 刷 法 によるプラスチック基 板 上 のトランジスタアレイ ··········································· 366
１０ メチル置 換 オリゴチオフェン ······················································································ 366－xii－

８.２.３ 電 荷 移 動 錯 体 、金 属 錯 体 系 ······················································································ 367
１ TTF-TCNQとDBTTF-TCNQの組 み合 わせトランジスタ ············································ 367
２ DM-DCNQIの金 属 錯 体 ··························································································· 368
３ アンバイポーラ型 FET ······························································································· 368
４ ホウ素 錯 体 ··············································································································· 369
８.２.４ ポルフィリン、フタロシアニン ························································································ 370
１ ポルフィリン化 合 物 ··································································································· 370
２ 縮 環 ポルフィリン銅 錯 体 ··························································································· 370
３ テトラベンゾポルフィリン（TBP) ·················································································· 371
４ 塗 布 成 膜 の可 能 なフタロシアニン系 材 料 ································································· 371
５ アルキルチオフェン縮 環 ポルフィラジン ····································································· 372
６ フタロシアニン薄 膜 トランジスタの電 場 変 調 分 光 ······················································ 372
７ 鉛 フタロシアニンFET ································································································ 373
８ フタロシアニンによる透 明 なトランジスタ ····································································· 373
９ フタロシアニンの配 向 制 御 と電 気 特 性 ····································································· 373
８.２.５ 液 晶 性 半 導 体 ············································································································· 374
１ 新 規 液 晶 性 有 機 半 導 体 材 料 ·················································································· 374
２ 不 純 物 の影 響 ·········································································································· 375
３ 液 晶 性 有 機 FET ······································································································· 376
８.２.６ フラーレン系 ················································································································ 376
１ フラーレン ················································································································· 376
２ フラーレンとペンタセン ······························································································ 376
３ フラーレンと高 分 子 材 料 の混 合 ················································································ 377
８.２.７ 有 機 強 誘 電 体 メモリー ································································································ 377
１ フッ化 ビニリデン/3フッ化 エチレン共 重 合 体 ····························································· 377
２ Pb(Zr 0 . 5 2 Ti 0 . 4 8 )O 3 、PZT ···························································································· 378
３ ポリイミド基 板 とVDFオリゴマー ················································································· 378
４ ペリレンジイミド3量 体 ································································································ 379
８.２.８ 有 機 光 電 変 換 ············································································································· 379
１ CMOSイメージセンサー ···························································································· 379
２ 光 駆 動 型 有 機 トランジスタ ························································································ 380
３ 光 情 報 入 出 力 記 録 素 子 ·························································································· 380
８.２.９ 新 規 有 機 半 導 体 ········································································································· 381
１ ヘキサベンゾコロネン（HBC)置 換 体 ········································································· 381
２ ペリレンテトラカルボキシルジイミド（PTCDI) ······························································ 382
３ n型 有 機 半 導 体 用 の化 合 物 の開 発 ········································································· 382
８.３ 有 機 半 導 体 の製 法 、構 造 、物 性 物 理 、制 御 ···································································· 383
８.３.１ 製 法 ·························································································································· 383
１ マイクロコンタクトプリント法 ························································································ 383
２ 基 板 の裏 から露 光 するプラスチック基 板 有 機 TFTの製 法 ········································ 384－xiii－

３ コロイダルリソグラフィー法 ························································································· 384
４ 有 機 発 光 型 トランジスタ ···························································································· 385
５ フレキシブル電 子 ペーパー ······················································································· 386
６ 薄 膜 単 結 晶 からのFET－１ ······················································································· 387
７ 薄 膜 単 結 晶 からのFET－２ ······················································································· 387
８ Evaporative Spray Deposition from Ultradilute Solution (ESDUS)法 ··················· 387
８.３.２ 構 造 ·························································································································· 388
１ 半 導 体 デバイス ········································································································ 388
２ 有 機 半 導 体 の絶 縁 膜 、保 護 膜 ················································································ 392
３ 有 機 半 導 体 の電 極 ·································································································· 397
８.３.３ 有 機 半 導 体 素 子 の接 触 、界 面 ··················································································· 399
１ 有 機 半 導 体 素 子 の界 面 制 御 ··················································································· 399
２ 電 極 の形 成 方 法 の比 較 ··························································································· 400
３ シランカップリング剤 の構 造 ・界 面 制 御 ···································································· 401
８.３.４ 有 機 半 導 体 素 子 の配 向 ····························································································· 402
１ グラフォエピタキシー法 ····························································································· 402
２ 液 晶 性 両 親 媒 性 分 子 の配 列 による電 子 輸 送 性 の向 上 ·········································· 402
３ 薄 膜 の分 子 配 向 と電 気 特 性 ···················································································· 402
４ 光 配 向 性 ポリマーによる配 向 ··················································································· 403
８.３.５ 有 機 半 導 体 素 子 の評 価 ····························································································· 404
１ 電 気 特 性 ·················································································································· 404
２ 分 子 情 報 、構 造 の評 価 ···························································································· 406

第 ９章 有 機 EL ························································································································· 410
９.１ 有 機 EL照 明 ······················································································································ 411
９.１.１ NEDO「照 明 用 高 効 率 有 機 EL技 術 の研 究 開 発 」プロジェクト ···································· 411
９.１.２ 有 機 EL照 明 の実 用 化 ································································································· 411
Lumiotec(ルミオテック) (三 菱 重 工 業 、ローム、凸 版 印 刷 、三 井 物 産 )、日 本 電 気 、コニカミノルタ、出 光 興 産 、パナソニック電 工 、
オスラム オプトセミコンダクターズ、新 日 鐵 化 学 、日 本 ゼオン
９.１.３ 照 明 素 子 としての実 用 化 に向 けた課 題 ····································································· 414
９.２ 有 機 ELディスプレイ最 新 動 向 ··························································································· 414
９.２.１ 大 型 有 機 ELディスプレイ ····························································································· 414
ＮＥＤＯ、大 日 本 スクリーン製 造 、エプソン、東 芝 松 下 ディスプレイテクノロジー、ソニー
９.２.２ 中 ・小 型 有 機 ELディスプレイ ······················································································· 416
ソニー、KDDI、NHK技 研 、京 セラ、富 山 大 、 ブラザー工 業 、
大 日 本 印 刷 、有 機 エレクトロニクス研 究 所
９.２.３ フレキシブル有 機 ELディスプレイ ················································································ 419
NEDO「高 効 率 有 機 デバイスの開 発 」プロジェクト、ソニー、大 阪 大 、東 京 工 芸 大 、NHK技 研 、富 山 大 、ブラザー工 業 、KAST、千 葉 大 、パイオニア－xiv－

９.２.４ 透 明 性 を利 用 した有 機 ELディスプレイ ········································································ 422
フルカラー透 明 有 機 EL素 子 、両 面 発 光 有 機 ＥＬパネル
９.３ 有 機 ELの薄 膜 材 料 ··········································································································· 425
９.３.１ 低 分 子 系 発 光 材 料 ····································································································· 425
１ 蛍 光 低 分 子 ·············································································································· 425
２ 青 色 発 光 材 料 ·········································································································· 426
３ 緑 色 りん光 材 料 ········································································································ 426
４ 有 機 EL青 色 素 子 ····································································································· 426
５ 蛍 光 発 光 材 料 複 素 環 化 合 物 ·················································································· 427
６ 蛍 光 材 料 を用 いた赤 色 発 光 材 料 ············································································ 427
７ リン光 による高 発 光 効 率 化 と塗 布 プロセスによる低 コスト化 ······································ 428
８ 色 純 度 が高 い赤 色 りん光 材 料 ················································································· 428
９.３.２ 高 分 子 系 発 光 材 料 ····································································································· 428
１ 住 友 化 学 の取 り組 み ································································································ 428
２ 非 共 役 型 高 分 子 りん光 発 光 材 料 ············································································ 429
３ 蒸 着 重 合 法 による共 役 系 高 分 子 発 光 材 料 ····························································· 430
４ 積 層 型 発 光 素 子 ······································································································ 432
９.３.３ 輸 送 層 、注 入 層 材 料 ·································································································· 433
１ オリゴマー系 ············································································································· 433
２ SAMによる有 機 EL素 子 の正 孔 輸 送 層 の膜 安 定 性 の改 善 ····································· 434
３ 混 合 LB法 による混 合 系 ··························································································· 434
４ 代 表 的 な正 孔 注 入 層 の比 較 ··················································································· 436
５ 有 機 半 導 体 を結 合 したグラフトポリマー ···································································· 436
６ 低 駆 動 電 圧 化 ·········································································································· 437
７ 電 子 輸 送 材 料 の検 討 ······························································································ 438
８ デンドリマーを用 いた正 孔 輸 送 材 料 ········································································· 439
９.４ 成 膜 方 法 、装 置 、評 価 ······································································································ 439
９.４.１ 成 膜 方 法 ···················································································································· 439
１ 山 形 大 学 の取 り組 み ································································································ 439
２ プラズマ重 合 膜 と無 機 膜 の積 層 保 護 膜 ··································································· 440
３ プラズマ重 合 によるホール輸 送 層 ············································································ 441
４ 透 明 有 機 EL素 子 ····································································································· 441
５ MoO 3 による劣 化 改 善 ······························································································· 441
６ 作 製 時 の真 空 度 と劣 化 ···························································································· 442
９.４.２ 成 膜 装 置 ···················································································································· 442
三 菱 重 工 業 、トッキ、春 日 電 機 、アインテスラ、日 立 造 船 、ヒラノテクシード
９.４.３ 有 機 EL素 子 の評 価 ····································································································· 443
１ Backside SIMSによる有 機 EL素 子 界 面 の不 純 物 拡 散 評 価 ·································· 443
２ 層 構 造 の傾 斜 断 面 分 析 ·························································································· 444－xv－

第 １０章 太 陽 電 池 ·················································································································· 445
１０.１ 太 陽 電 池 の一 般 情 勢 ···································································································· 445
１０.２ シリコン系 太 陽 電 池 の薄 膜 技 術 ···················································································· 446
１０.２.１ 高 速 化 、大 型 化 ······································································································· 446
１ 大 型 化 の量 産 例 ······································································································ 446
２ 局 在 プラズマCVDによる高 速 成 膜 ··········································································· 447
３ Cat-CVD法 ··············································································································· 448
４ エピタキシャルリフトオフ法 （ELO法 ）と急 速 蒸 着 法 （RVD法 ） ··································· 448
５ マイクロ波 プラズマによる微 結 晶 シリコン膜 の大 面 積 成 膜 ········································ 449
６ RF帯 のプラズマCVD ································································································ 450
１０.２.２ 高 効 率 化 ·················································································································· 450
１ NEDO「太 陽 光 発 電 システム未 来 技 術 研 究 開 発 」太 陽 電 池 開 発 の成 果 ················ 451
２ ハイブリッド化 －１ ······································································································ 452
３ ハイブリッド化 －２ ······································································································ 452
４ ハイブリッド化 －３ ······································································································ 453
５ 多 結 晶 太 陽 電 池 （参 考 ） ·························································································· 454
６ 薄 膜 シリコン系 3接 合 太 陽 電 池 ················································································ 454
７ 波 長 変 換 薄 膜 フィルタ ······························································································ 454
８ BaSi 2 系 半 導 体 の太 陽 電 池 ····················································································· 455
９ フルスペクトル関 連 ··································································································· 456
１０.２.３ 安 定 化 ······················································································································ 457
１ アモルファスシリコン薄 膜 の安 定 化 方 法 ··································································· 457
２ a-Si:H薄 膜 中 のSi微 粒 子 (クラスタ)対 策 ·································································· 458
１０.２.４ フィルム基 板 ············································································································· 459
富 士 電 機 、TDK、フレキシブル太 陽 電 池 基 材 コンソーシアム
１０.３ 化 合 物 型 太 陽 電 池 ········································································································ 462
１０.３.１ 化 合 物 型 太 陽 電 池 のトピックス ··············································································· 462
１ 窒 化 ホウ素 ··············································································································· 462
２ InGaP/InGaAs/Ge 3接 合 太 陽 電 池 の開 発 ···························································· 463
１０.３.２ 化 合 物 型 太 陽 電 池 の実 用 化 動 向 ··········································································· 463
昭 和 シェル石 油 、本 田 技 研 工 業
１０.３.３ 化 合 物 太 陽 電 池 の研 究 動 向 ··················································································· 464
１ 省 資 源 化 と変 換 効 率 の向 上 ···················································································· 464
２ レーザーアシスト成 膜 法 の最 適 化 、結 晶 性 向 上 ······················································ 465
３ スクリーン印 刷 /焼 結 法 ····························································································· 467
４ InGaN 系 タンデム太 陽 電 池 の基 盤 技 術 ································································· 467
５ 半 導 体 量 子 ドット(quantum dot：QD)による太 陽 電 池 ··············································· 468
６ フレキシブル型 ········································································································· 469
７ 電 着 法 ······················································································································ 470
８ AgGaSe 2 ··················································································································· 471－xvi－

１０.４ 有 機 薄 膜 系 太 陽 電 池 ···································································································· 471
１０.４.１ 低 分 子 系 ·················································································································· 471
１ フラーレン系 ············································································································· 471
２ フタロシアニン系 ······································································································· 475
３ ポルフィリン系 ··········································································································· 476
１０.４.２ 高 分 子 系 ·················································································································· 478
１ トピックス ··················································································································· 478
２ P3HT/PCBMブレンド系 ··························································································· 479
３ 光 電 変 換 層 の製 造 時 溶 媒 の影 響 ··········································································· 479
４ TiO 2 ホールブロック層 ······························································································· 480
５ 光 捕 集 層 の効 果 ······································································································ 480
６ ポリマー分 子 量 の影 響 ····························································································· 481
７ 自 己 組 織 化 によるバッファー層 形 成 ········································································ 481
８ P3HT-フラーレン ラミネート法 ·················································································· 481
９ ナノインプリント法 ······································································································ 481
１０ SWNT-P3HT系 ········································································································ 481
１０.５ 色 素 増 感 型 太 陽 電 池 ···································································································· 482
１０.５.１ 色 素 増 感 型 太 陽 電 池 の実 用 化 状 況 ······································································· 483
ペクセルテクノロジーズ、ソニー、シャープ、TDK、太 陽 誘 電 、グンゼ、大 日 本 印 刷
１０.５.２ 色 素 増 感 太 陽 電 池 の研 究 開 発 ··············································································· 484
１ タンデム型 太 陽 電 池 ································································································· 484
２ 表 面 処 理 ·················································································································· 485
３ ZnO電 極 ··················································································································· 485
４ 対 極 ······················································································································· 485
５ 新 規 色 素 、新 規 サブモジュール ··············································································· 486
６ 電 解 液 の漏 出 対 策 ·································································································· 486
７ 電 池 特 性 向 上 対 策 ·································································································· 486
８ フィルム型 でカラフルな色 素 増 感 太 陽 電 池 ······························································ 487

第 １１章 燃 料 電 池 、二 次 電 池 ···························································································· 488
１１.１ 燃 料 電 池 ························································································································ 488
１１.１.１ 燃 料 電 池 を取 り巻 く環 境 ·························································································· 488
研 究 機 関 、研 究 プロジェクト、規 格 、メーカー
１１.１.２ 燃 料 電 池 用 薄 膜 材 料 ······························································································ 489
１ 多 孔 性 配 位 高 分 子 と無 機 材 料 のナノハイブリッド薄 膜 ············································ 489
２ ナノ薄 膜 電 解 質 ······································································································· 490
３ フレキシブルマイクロ燃 料 電 池 ················································································· 491
４ 携 帯 電 話 用 マイクロ燃 料 電 池 ·················································································· 491
５ マイクロ燃 料 電 池 (参 考 ) ··························································································· 491
１１.２ 薄 膜 を用 いる燃 料 電 池 の最 新 動 向 ··············································································· 492－xvii－

１１.２.１ 直 接 メタノール型 燃 料 電 池 (DMFC) ········································································· 492
シャープ、パナソニック、旭 化 成 、トクヤマ、群 馬 大 、日 立 製 作 所 、東 レ、
長 岡 技 術 大 、東 芝 、九 州 工 大 、ダイハツ工 業 、AIST
１１.２.２ 固 体 高 分 子 型 燃 料 電 池 (PEFC) ············································································· 497
１ PEFCの電 解 質 膜 ····································································································· 497
２ PEFCの電 極 ············································································································· 500
３ PEFCの部 材 ············································································································· 503
１１.２.３ 固 体 酸 化 物 型 燃 料 電 池 (SOFC) ············································································· 504
１ 薄 膜 SOFC ················································································································ 504
２ PLDによる薄 膜 －１ ··································································································· 505
３ PLDによる薄 膜 －２ ··································································································· 505
４ 中 温 型 SOFC用 の電 解 質 ························································································· 505
５ CVI法 によるイットリア安 定 化 ジルコニア薄 膜 ··························································· 505
１１.２.４ 微 生 物 型 燃 料 電 池 (MFC) ······················································································· 506
１ カセット微 生 物 FCシステム ························································································ 506
２ 電 子 伝 達 メディエータ修 飾 酵 素 電 極 ······································································· 506
３ 複 合 カチオン交 換 膜 ································································································ 508
１１.３ 二 次 電 池 の最 新 動 向 ···································································································· 509
１１.３.１ リチウムイオン二 次 電 池 の開 発 ··············································································· 509
アルバック、岩 手 大 、日 本 電 気 硝 子 、京 都 大 、住 友 電 工
１１.３.２ リチウムイオン電 池 セパレータ ·················································································· 511
三 菱 樹 脂 、旭 化 成 、日 立 グループ
１１.３.３ リチウムイオン電 池 電 極 材 料 ··················································································· 514
東 芝 、東 工 大 、AIST、ムラタ製 作 所 、エナックス、大 研 化 学 工 業 、
本 庄 ケミカル、JFEミネラル、富 士 重 工 業
１１.３.４ リチウムイオン電 池 の電 解 質 ··················································································· 516
電 力 中 央 研 究 所 、出 光 興 産
１１.３.５ リチウム-空 気 電 池 ·································································································· 517
１１.３.６ ニッケル水 素 電 池 ···································································································· 518
三 洋 電 機 、パナソニック、川 崎 重 工 業
１１.３.７ 有 機 ラジカル電 池 ····································································································· 518
１１.３.８ 分 子 クラスター電 池 ·································································································· 519

第 １２章 センサー ···················································································································· 520
１２.１ 物 理 センサー ·················································································································· 520
フィルタレスUVセンサー、ZnO UVセンサー、ダイヤモンド紫 外 線 センサー、
カーボンナノチューブIRセンサー、SEIRA効 果 利 用 IRセンサー、
熱 型 赤 外 線 イメージセンサー、薄 膜 熱 電 対 、スルホン化 ポリイミド湿 度 センサー、
歪 み検 出 酸 化 クロム薄 膜 、触 覚 センサー、複 合 窒 化 物 薄 膜 圧 力 センサー、
金 属 ガラス合 金 薄 膜 圧 力 センサー、加 速 度 センサー、磁 気 センサー

－xviii－１２.２ 化 学 センサー ·················································································································· 526
マイクロ熱 電 式 水 素 ガスセンサー、酸 化 タングステン水 素 ガスセンサー、
CNT分 散 高 分 子 薄 膜 水 素 ガスセンサー、マクロポーラスPdO薄 膜 水 素 ガスセンサー
NOxセンサー、大 気 汚 染 ガスセンサー、酸 素 センサー、炎 センサー

あ と が き ···································································································································· 531
略 語 表 ···································································································································· 532
参 考 文 献 ···································································································································· 536－xix－