24G07
Preparation of functional thin films using powder target
粉体ターゲットを用いた機能性薄膜の作製
Hiroharu Kawasaki, Kento Arafune, Tamiko Ohshima, Yoshihito Yagyu and Yoshiaki Suda
川崎仁晴, 荒舩健人，大島多美子，柳生義人，須田義昭
Department of Electrical and Electronic Engineering, Sasebo National College of Technology
1-1 Okishin, Sasebo, Nagasaki 857-1193，Japan
佐世保工業高等専門学校 〒857-1164 長崎県佐世保市沖新町1-1

Thin films preparing by the sputtering method which used the powder material as a target wasperformed. XRD results suggest that crystalline TiO2 thin films can be prepared using Ti powdertarget, and crystallinity of the film depend on the substrate temperature. These experimental
results suggest that TiO2 thin films can be prepared using supttering deposition with Ti powder
target and quality of the film was almost same prepared using common bulk target.
1. Introduction
Plasma processing, such as plasma enhanced
chemical vapor deposition, sputtering deposition,pulsed laser deposition (PLD), has been used forfunctional thin film deposition. We have been
prepared several kinds of functional thin films using
those methods[1-8]. In general, high-density bulk
targets have been used to prepare functional thinfilms by the sputtering method and PLD method.
Therefore, burned and hardened bulk targets havebeen produced before thin films preparation.
However, the method cannot be used for material
which will deteriorate by heating, and the films
with some element ingredients. In addition thismethod requires cost to prepare high quality films.
We also prepared organic electroluminescence(OEL) thin films using PLD method. To increase
the target density, the Alq3 targets was produced
using shock solidification technology. However,prepared film does not have enough quality for
OEL. These problems can be solved by using
powder material for a target as it is.
In this study, film preparing by the sputtering
method which used the powder material as a target
is performed. The growth mechanism isinvestigated in the probe method, a spectroscopic
method, and X- ray analysis.
2. Experimental
RF magnetron sputtering system with powder
target was used to prepare thin film in thisexperiment, as shown in Fig. 1. Powder titaniummaterial (99.9%, 45µmφ) and bulk Ti target(99.98%) was used as targets. The chamber wasevacuated to 5×10-5 Pa, and then Ar and O2 mixturegas were fed into them to 10 Pa. Sputtering plasmas
were generated by RF voltage of 13.56MHz. RF

power increased 20W to 100W at 1W/min, and afterthat films were prepared for 120 minutes. Thecrystalline structure and crystallographic orientationof the prepared thin films were characterized by
X-ray diffraction analysis (XRD; RIGAKURINT2100V) using CuKα radiation. The surface
morphology of the films on Si(100) substrates wasobserved by atomic force microscopy (AFM; JOELJSPM4210).

Fig.1. Experimental Setup

3. Results
Fig. 2 shows XRD patterns of the films preparedby RF magnetron sputtering with Ti powder target
as parameters of Ar:O2 gas mixture. It is suggestthat XRD pattern of the films almost same
independent for the Ar gas mixture. A crystalline ofrutile TiO2(110) and TiO(200) peaks can beobserved. The results suggest that polycrystal TiO2
thin films can be prepard using the method. Fig. 3
shows XRD patterns of the film prepared using
bulk target. The results suggest that a crystalline ofTiO(200) peaks can be observed independent for
the Ar gas mixture. Fig. 4 shows XRD patterns of
the films prepared by RF magnetron sputtering with
Ti powder target as parameters of substrate

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composed of small particles of 30~50 nm indiameter.
These experimental results suggest that TiO2 thinfilms can be prepared using supttering deposition
with powder target and quality of the film wasalmost same prepared using bulk target.

Fig.2. XRD patterns of the films prepared usnig Ti
powder target as parameters of Ar:O2 gas mixture.

5. Conclusions
RF magnetron sputtering system with powder
target was used to prepare thin film. XRD results
suggest that crystalline TiO2 thin films can beprepared using Ti powder target, and crystallinity of
the film depend on the substrate temperature.
Acknowledgments
This work was supported in part by a Grant-in-Aidfor Scientific Research in Priority Areas (B)(No.23340181), Grant-in-Aid for Scientific
Research on Innovative Areas (No.22110519),
Nippon Sheet Glass Foundation for Materials
Science and Engineering.

Fig.3. XRD patterns of the films prepared usnig Ti
bulk target as parameters of Ar:O2 gas mixture.

References[1] H. Kawasaki, K. Doi, S. Hiraishi, and Y. Suda: Jpn.
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Ohshima, T. Nakazono, and T. Ohshima: IEEE
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[4] Y. Suda, K. Doi, J. Namba, F. Imura, and H.
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[7] D. Dzibrou, A. M. Grishin, and H. Kawasaki: Thin
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[8] H. Kawasaki, T. Ohshima, Y. Yagyu, and Y. Suda:
Trans. Mater. Res. Soc. Jpn, 33 (2008) 655.

Fig.4. XRD patterns of the films prepared usnig Ti
powder target as parameters of substrate temperature.

temperature. At the low substarte temperatureanatase TiO2(101) can be observed. However, rutileTiO2(101) can be observed at the high substratetemperature.
We also observed surface morphology of thefilms by AFM. Both of the AFM images of the filmusing bulk and powder shows very smooth andmean roughness is ~nm. The films were found to be

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