Shizuoka University, Hamamatsu Instrumental Analysis Center
Instruments List (Joint Research Laboratory / Innovation and Social Collaboration Building)
No.

Name
(Model Number)

Use

Manufacture

Adviser

Main
Staff

Sub
Staff

Location

Billing
Unit

1

General Purpose AFM(SPI-3800)

Surface observation of up
to 20 μm square

Seiko
Instruments

Iwata

MiyakeIshikawa

102

Half Day2

Simple AFM(VN-8010)

Surface observation of up
to 200 μm square

KEYENCE

Iwata

Ishikawa

Ishikawa

102

1 Hour

3

SPM(JSPM-5200)

Surface observation by
AFM and STM

JEOL

Iwata

Ishikawa

Ishikawa

102

Half Day

4

Digital Microscope(KH-7700)

Observation at 35-2500x(3D observation is possible)

Hirox

Shimomura

MiyakeShimizu102

1 Hour

UV-Vis Spectrophotometer(V-670)Material identification
using UV-Vis light

JASCO

Murakami Takasawa

MiyakeHayakawa

102

Half Day

6

Fluorescence
Spectrophotometer(FP-8600, FP-8700)

Qualitative and quantitative
analysis by fluorescence

JASCO

Kawai

Takasawa

Ishikawa

102

Half Day

7

Laser Microscope(VK-X3000)

Surface profile measurement

KEYENCE

Ishikawa

Ishikawa

Miyake102

1 Hour8

Micro XRF
(M4 TORNADO PLUS)

X-ray fluorescence
spectrometry

BRUKER

Sakamoto

MiyakeIshikawa

103

1 Hour9

Powder XRD(RINT2200)

Powder x-ray
diffractometry

RigakuOkuya

MiyakeIshikawa

103

Half Day

10

Multi Function XRD(EMPYEAN)

X-ray diffractometry

Malvern
Panalytical

Sakamoto

MiyakeIshikawa

103

2 Hours

11

Raman Spectroscopy(NRS-7100)

Material identification byvisible light

JASCO

Ishikawa

Takasawa

MiyakeHayakawa

103

2 Hours12

FT-IR(FT/IR-6300, IRT-7000)

Material identification by Infrared ray, Macro / Micro / Mapping measurement

JASCO

Ishikawa

Takasawa

MiyakeHayakawa

103

Half Day

13

ICP(Optima 2100DV)

Quantification ofelements in solution

PerkinElmer

Miyabayashi

Ishikawa
MiyakeIshikawa
Miyake104

Half Day

14

Thermal Analysis(DTG-60A)

Measurement of heat resistance temperature andcalorific value

SHIMADZU

Toda

Kusanagi

Ishikawa
Miyake104

Half Day

15

DSC(DSC-60Plus)

Differential scanning calorimetry

SHIMADZU

NeoKusanagi

Ishikawa
Miyake104

Half Day

16

Organic Trace Elemental
Analysis(Flash EA)

Elemental analysis of organic trace elements

ThermoElectron

Toda

Kusanagi

Ishikawa
Miyake104

Half Day

17

Atomic Absorption(Solar S4-AA)

Elemental analysis by absorption

ThermoElectron

Kohno

Kusanagi

Ishikawa
Miyake104

Half Day

Electrochemical Analysis System(HZ-Pro S4)

AC impedance cyclic voltammetry

HOKUTO
DENKO

Murakami

Kusanagi

Murakami

104

Half Day

19

Battery Charge / Discharge
System (HJ1001SD8)

Charging / discharging
characteristics evaluation

HOKUTO
DENKO

Murakami

Kusanagi

Murakami

104

Half Day

20

Zeta Potential Analyzer(Zetasizer Ultra)

Zeta potential and particle
size measurements

Malvern
Panalytical

Sakamoto

Hayakawa

Kusanagi

104

1 Hour21

XRF(EDX-8000)

Elemental analysis

SHIMADZU

Murakami

MiyakeHayakawa

104

1 Hour

22

ESCA(ESCA-3400)

Identification of surface
atoms by photoelectron

SHIMADZU

Ishikawa

Ishikawa

Hayakawa

104

23

General Purpose SEM(S-3000N)

Surface observation bysecondary electron

HitachiHigh-Tech

Ishikawa

HirataMiyake104

Half Day24

Ion Coater(SC-701AT)

Au coater for SEM

Sanyu
Electron

Murakami

Ishikawa

Hayakawa

104

1 Hour25

Ion Milling(EM RES101)

Processing of specimens
for TEM using ion beam

LEICA

Murakami

Ishikawa

Hayakawa

104

Half Day

5

18

1

Shizuoka University, Hamamatsu Instrumental Analysis Center
No.

Name
(Model Number)

Use

Manufacture

Adviser

Main
Staff

Sub
Staff

Location

Billing
Unit

26

Soft Etching

Surface cleaning

meiwafosis

Murakami

Ishikawa

Miyake104

1 Hour

27

Pt Sputter(JFC-1600)

Pt sputter for SEM

JEOL

Ishikawa

MiyakeHayakawa

104

1 Hour28

Cross-section Polisher(IB-09020 CP)

Cross-sectioning ofsamples

JEOL

Ishikawa

KoyamaIshikawa

104

Half Day

29

On-site FE-SEM(JSM-7001F)High resolution surface
morphology observation,
Elemental analysis, Crystal
phase analysis

JEOL, etc.

Murakami

Ishikawa

Hayakawa

104

2 Hours

30

FE-EPMA(JXA-8530F)

Trace elemental analysis

JEOL

Murakami

KoyamaMurakami

104

Half Day

Surface observation

JEOL

Ishikawa

MiyakeShimizu

10F

Half Day

31

W-SEM(JSM-6360LA)

32XRD(RINT UltimaⅡ)

X-ray diffractometry

RigakuShimomura

KoyamaMurakami

10F

Half Day

33

NMR(AvanceIII HD400)

Nuclear magnetic
resonance

BRUKER

Tanaka Y

Hayakawa

HirataInnov.

1 Hour34

Mass sSpectrometer(micrOTOF)

Mass spectrometry

BRUKER

Tanaka Y

Hayakawa

HirataInnov.

1 Hour35

Shape Mesuring Instrument(VR-3200)

Shape measurement

KEYENCE

Ishikawa

Ishikawa

Hayakawa

102

1 Hour36

3D Printer(Bullulo200)

3D printer

Systemcreate

Ishikawa

Hayakawa

Shimizu

101(Fused Deposition Modeling)

Instruments List (Center for Nanodevice Fabrication and Analysis)
No.

Name
(Model Number)

Use

Manufacture

Adviser

Main
Staff

Sub
Staff

Location

Billing
Unit

N1

Thin Layer XRD(RINT Ultima III)

Powder and thin film
x-ray diffraction

RigakuShimomura

KoyamaShimomuraNanodeviceHalf Day

N2

Pt / Carbon Coater(SC701C)

Coater for SEM

Sanyu
Electron

Ishikawa

Ishikawa

MiyakeNano
device1 HourN3

Wide Area AFM(XE-70)Surface observation of up
to 45 μm squarePark
Systems

Ishikawa

MiyakeIshikawa

Nano
deviceHalf Day

N4

FE-SEM(JSM-6335F)

High resolution surface
morphology observation

JEOL

Murakami

Ishikawa

Hayakawa

Nano
device1 Hour

N5

Analytical FE-SEM(JSM-7001F)High resolution surface
morphology observation,
Elemental analysis

JEOL

Murakami

Ishikawa

Hayakawa

Nano
device2 Hours

N6

FIB(JIB-4500)

Ion beam processing

JEOL

Sakamoto

Shimizu

SakamotoNanodeviceHalf Day

N7

Ion Slicer(EM-09100 IS)

Processing of specimens
for TEMJEOL

Sakamoto

Shimizu

SakamotoNanodevice1 HourN8

XPS(AXIS ULTRA DLD)

Identification of surface
atoms by photoelectron

SHIMADZU

Shimomura

MiyakeIshikawa

Nano
deviceHalf Day

N9

STEM(JEM-2100F)

Scanning transmission
electron microscopy

JEOL

Sakamoto

Shimizu

SakamotoNanodeviceHalf Day

N10

Carbon Evaporator(JEC-560)

Carbon deposition
machine for SEM

JEOL

Ishikawa

MiyakeIshikawa

Nano
device1 Hour

N11

Solar Simulator(VK-SS-50, VK-IPCE-10)

Solar cell performance
evaluation

SPD Laboratory, Inc.

Murakami

Shimizu

Ishikawa

Nano
deviceHalf Day

N12

Surface Area Analyzer(TriStarⅡ Plus)

Surface area and porosity
analysis

SHIMADZU

Sakamoto

Hayakawa

Kusanagi

NanodeviceHalf Day2

Shizuoka University, Hamamatsu Instrumental Analysis Center
No.1
Name

General Purpose AFM

Model No.

SPI-3800

Manufacture

Seiko Instruments

Location

Joint Research Laboratory 102

Adviser

Iwata Futoshi

Staff

Miyake Aki

Features
A probe (cantilever) scans a few nm away from thesurface of the sample to measure sample shape. The
resolution in the height direction is so high that steps ofa single atomic layer can be observed.
Detection

Optical lever

Measurement Modes

AFM (contact mode)
DFM (tapping mode)

Scan Range

X, Y = 20 μm, Z = 1.5 μm

No.2
Name

Simple AFM

Model No.

VN-8010

Manufacture

KEYENCE

Location

Joint Research Laboratory 102

Adviser

Iwata Futoshi

Staff

Ishikawa Makoto

FeaturesIt enables to observe the nano-region by selectingfrom optical microscope image by mouse operation.
You can specify the AFM measurement area with

XY direction: 200 nm - 200 μm,
Z direction: ± 10 μm

nanometer precision because the positioning can bedone under the optical microscope. From the AFM
data obtained, it is possible to analyse the surface

Specifications
AFM Part

Scanner: Voice Coil Motor (VCM) using
Vertical resolution: 0.3 nm
Self-sensing system, Contact / DFM / SSroughness and the cross-sectional shape.

Magnification: 250 - 1250x
Specifications
Optical Microscope Part

3

Observation range:
1000(H) x 750(V) μm - 200(H) x 150(V) μm
motorised zoom, motorised focus,
motorised lighting apertureShizuoka University, Hamamatsu Instrumental Analysis Center
No. 3
Name

SPM

Model No.

JSPM-5200

Manufacture

JEOL

Location

Joint Research Laboratory 102

Adviser

Iwata Futoshi

Staff

Ishikawa Makoto

FeaturesThis is the Scanning Probe Microscope (SPM)
which can measure not only the surface profile but
also various physical quantities such as friction

Scan range:
X, Y = max 10 μm, Z = max 3 μm

forces, viscosity, magnetic force, etc. And they can

Sample size: 10 mm x 10 mm x 3 mm (T)be visualised.
Specifications

Measurement mode:
AFM Contact mode
AC modeNon-Contact mode (FM mode)
STM mode (Topography image, Current image)

Detection: Optical lever

No. 4
Name

Digital Microscope

Model No.

KH-7700

Manufacture

Hirox

Location

Joint Research Laboratory 102

Adviser

Shimomura Masaru

Staff

Miyake Aki

FeaturesThis is the digital microscope which enables 35 - 2500x
and 3D observation. You can conduct observation,measurement and recording smoothly. Not only 2D
measurement and image processing, but also depth synthesis, 3D image construction and image linking can beSpecifications

done.

4

35 - 2500x observation can be done
2D / 3D observation

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 5
Name

UV-Vis Spectrophotometer

Model No.

V-670

Manufacture

JASCO

Location

Joint Research Laboratory 102

Adviser

Murakami Kenji

Staff

Takasawa Taishi

FeaturesThis is an UV-VIS-NIR spectrophotometer. Measurementsfrom 190 - 3200 nm are possible. An automatic absolute reflectance measuring device is also equipped.

No. 6
Name

Fluorescence Spectrophotometer

Model No.

FP-8600, FP-8700

Manufacture

JASCO

Location

Joint Research Laboratory 102

Adviser

Kawai Hideki

Staff

Takasawa Taishi

Features
It is an instrument for qualitative andquantitative analysis using fluorescence.

Specifications

Light source: 150W, shielded house xenon lamp
Sensitivity: S/N > 150 (P-P), S/N > 600 (RMS)

Measuring Wavenumber
Range

200 - 850 nm (ex) and zeroth-order light
100 - 1010 nm (em) and zeroth-order light

Band Width1, 2.5, 5, 10, 20, L5, L10 nm (ex)2, 5, 10, 20, 40, L5, L10, L20 nm (em)Wavelength Scanning
Speed

10～60000 nm/min (ex)20～120000 nm/min (em)Resolution (at 546.1 nm)

1.0 nm (ex), 2.0 nm (em)5Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 7
Name

Laser Microscope

Model No.

VK-X3000

Manufacture

KEYENCE

Location

Joint Research Laboratory 102

Adviser

Ishikawa Makoto

Staff

Ishikawa Makoto

Features
The system can measure the surface topography of sample
workpieces with nanometer-order height resolution using threedifferent measurement methods: laser confocal, white interference and focus variation.

No. 8
Name

Micro XRF

Model No.

M4 TORNADO PLUS

Manufacture

BRUKER

Location

Joint Research Laboratory 103

Adviser

Sakamoto Naonori

Staff

Miyake Aki

FeaturesThis is the Micro XRF for detection and analysis of
all elements form C to Am. It uses 20 µm diameter
X-rays and allows local analysis and elemental map-

6

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 9
Name

Powder XRD

Model No.

RINT2200

Manufacture

RigakuLocation

Joint Research Laboratory 103

Adviser

Okuya Masayuki

Staff

Miyake Aki

FeaturesThis is a X-ray diffractometer for powder samples. The
sample holder is a glass sample plate. For small sample
quantities, a silicon non-reflective sample plate canalso be used.

No. 10Name

Multi Function XRD

Model No.

EMPYREAN

Manufacture

Malvern Panalytical

Location

Joint Research Laboratory 103

Adviser

Sakamoto Naonori

Staff

Miyake Aki

FeaturesMultipurpose X-ray diffractometer for special use. It is
adapted to many optional measurements, such as a thin film
measurement, a residual stress measurement, a variable temperature measurement(-190℃ to 600℃).
You can use Cu or Cr as an anode target. A 2D solid-state hybrid pixel X-ray detector (PIXcel3D) is installed.

7

X-ray Tube

Cu

Optical System

focusing beam

Scan Mode2θ/θ linked, θ, 2θ alone

Goniometer Radius

185 mmShizuoka University, Hamamatsu Instrumental Analysis CenterNo. 11Name

Raman Spectroscopy

Model No.

NRS-7100

Manufacture

JASCO

Location

Joint Research Laboratory 103

Adviser

Ishikawa Makoto

Staff

Takasawa Taishi

FeaturesThis is the laser Raman microspectrograph with 4 lasers ofwavelength 325, 532, 785 and 1064 nm and a fast mapping
function. Accessories include stretching, cooling and heatingstages.
Measuring
Wavenumber
Range

50～8000 cm-1
(excitation at 532 nm, with standard rejection filter)

Max Resolution

0.7 cm-1 / pixel (excitation at 532 nm)

No. 12Name

FT-IR

Model No.

FT/IR-6300, IRT-7000

Manufacture

JASCO

Location

Joint Research Laboratory 103

Adviser

Ishikawa Makoto

Staff

Takasawa Taishi

Features
FT-IR is an instrument for measuring the infrared absorption
spectrum of a substance and evaluating its substructure (e.g.
functional groups) and compositions. Both micro- and macromeasurements are possible. It is equipped with a mapping
function.

8

Shizuoka University, Hamamatsu Instrumental Analysis CenterNo. 13Name

ICP-OES

Model No.

Optima 2100DV

Manufacture

PerkinElmer

Location

Joint Research Laboratory 104

Adviser

Miyabayashi Keiko

Staff

Ishikawa Makoto / Miyake Aki

Features
It allows quantitative analysis of trace elements (ppb
to ppm order) in aqueous solutions. Atomised liquidsamples are introduced into the plasma and the emission observed in the plasma is spectroscopically analysed for each element using a spectrometer for qualitative and quantitative analysis of the elements.

Specifications

Around 70 elements, mainly metallic elements, canAnalysable elements:
Sequential type

be analysed.

No. 14
Name

Thermal Analysis (TG-DTA)

Model No.

DTG-60A

Manufacture

SHIMADZU

Location

Joint Research Laboratory 104

Adviser

Toda Mitsuo

Staff

Kusanagi Hiroki

Features
Thermal analysis is a method of measuring the properties of a substance as a function of temperature ortime while changing the temperature of the substanceaccording to a set program. This machine can measure thermo gravimetry (TG) and differential thermal
analysis (DTA) simultaneously. TG data indicate theamount of components changed from the sample.

Measuring temperature range

room temperature～1000℃

Measuring range (TG)±500mg(minimum read: 0.001mg)

Measuring range (DTA)±1～±1000μV

DTA data show the transition temperature of thesample and whether it is an exothermic or endothermic phenomenon.

9

Shizuoka University, Hamamatsu Instrumental Analysis CenterNo. 15Name

DSC

Model No.

DSC-60Plus

Manufacture

SHIMADZU

Location

Joint Research Laboratory 104

AdviserNeo Yoichiro

Staff

Kusanagi Hiroki

FeaturesBy detecting the heat flow difference between a reference material and a sample, Differential Scanning
Calorimetry (DSC) obtain a DSC signal with the vertical axis being the calorific value (mW), which canbe used to determine the temperature (melting point,
glass transition temperature) and calorific value(reaction energy) of endothermic and exothermic
reactions of the material. It is also equipped with
optional software for specific heat analysis. The DSC
measurement has the additional measurement requirement of a temperature range at which the sample
does not decompose.

Measuring temperature range-140℃～600℃

Heat flow sensing range±150mW

No. 16
Name

Organic Trace Elemental Analysis

Model No.

Flash EA

Manufacture

Thermo Electron

Location

Joint Research Laboratory 104

Adviser

Toda Mitsuo

Staff

Kusanagi Hiroki

Features
It can determine the proportions of C, H, N and S
components in organic compounds. Sample is combustion-cracked and oxidised at temperatures above
900°C and in an oxygen atmosphere. Then the combustion gases are reduced and become CO2, H2, N2

Analytical principle

Gas chromatography

and SO2 at last. They are passed through a separation

Combustion method

Dynamic flash-burning method

AnalyteCHNS

Detection limits

Less than 1μg

column to separate the peaks and determined thecontent of each component.

10

Shizuoka University, Hamamatsu Instrumental Analysis CenterNo. 17
Name

Atomic Absorption

Model No.

Solar S4-AA

Manufacture

Thermo Electron

Location

Joint Research Laboratory 104

Adviser

Kohno Yoshiumi

Staff

Kusanagi Hiroki

Features
Sample solutions are sprayed into the flame and target
elements are converted into atomic vapors. When thesample is irradiated with light of a wavelength specificto the target element, the ground state atom absorbs thelight and transitions to an excited state. The concentration of the target element can be determined from theabsorption of this light (=absorbance).

No. 18
Name

Electrochemical Analysis System

Model No.

HZ-Pro S4

Manufacture

HOKUTO DENKO

Location

Joint Research Laboratory 104

Adviser

Murakami Kenji

Staff

Kusanagi Hiroki

Features
HZ-Pro is a modular multi-channel electrochemical
analysis system for all electrochemical measurements,
including battery evaluation tests, corrosion tests andanalytical tests. The most commonly used measurement methods in our center are chronoamperometry

Maximum output current±500mA

Control voltage±10V

Current detection range±500mA～±50nA
AUTO

Measuring frequency range

10μHz～1MHz(CA), cyclic voltammetry (CV), constant potential AC
impedance (IMP) and TAFEL extrapolation (TAFEL).
Charge and discharge measurements (CDC) are also
possible.

11

Shizuoka University, Hamamatsu Instrumental Analysis CenterNo. 19Name

Battery Charge / Discharge System

Model No.

HJ1001SD8

Manufacture

HOKUTO DENKO

Location

Joint Research Laboratory 104

Adviser

Murakami Kenji

Staff

Kusanagi Hiroki

FeaturesThis system automatically performs 'charging' and'discharging' to evaluate battery performance, and issuitable for a wide range of measurements, from basic
battery research and development to life and evaluation
tests. The independent format of each channel allows

Channel

8 channels, Independent format,
extensible

Voltage range

10V

Current range

1A～100μA、AUTO

Control mode

Constant current (CC), constant current/
constant voltage (CC/CV), etc.

individual condition settings. It can also be used forlong-term measurements of up to 100 days.

No. 20Name

Zeta Potential Analyzer

Model No.

Zetasizer Ultra

Manufacture

Malvern Panalytical

Location

Joint Research Laboratory 104

Adviser

Sakamoto Naonori

Staff

Hayakawa Toshihiro

Features
The particle size and zeta potential of particles dispersedin solution can be measured■zeta potential■particle size
Measuring
principles

Measuring principle

Dynamic light scattering (90 and 13 degree),Size range

3.8 nm～100 μm

Concentration range

1 mg/mL～40 %w/v

Multi-Angle Dynamic Light Scattering (MADLS)

Measuringangle
Measuringrange

Combination of mixed-mode measurement

Non-Invasive Back-Scatter (NIBS),

173, 13, 90 degree

Sample conductivity

Diameter: 0.3 nm～15 μm

range

Concentration Min: 0.1 mg/mL (15 kDa protein)range
Max: 40 %w/v

12

methods and light scattering phase analysis.

Max: 260 mS/cm

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 21Name

XRF

Model No.

EDX-8000

Manufacture

SHIMADZU

Location

Joint Research Laboratory 104

Adviser

Murakami Kenji

Staff

Miyake Aki

Features
It is an Energy dispersive X-ray fluorescence analyser(EDX-XRF). It can also measure light elements by evacuating its sample chamber. Not only for the qualitative andquantitative determination of elements in samples, but also
for the measurement of plating thickness.

Detectable Elements

Vacuum mode: C ~ U
Atmosphere: Al ~ U

No. 22Name

ESCA

Model No.

ESCA-3400

Manufacture

SHIMADZU

Location

Joint Research Laboratory 104

Adviser

Ishikawa Makoto

Staff

Ishikawa Makoto

Features
ESCA (Electron Spectroscopy for Chemical
Analysis), which is also known as XPS, is aneffective method to analyse elements in the very
surface layer of solids 5 to 50 Å. This is the way
to determine the binding energy of core electrons
on a solid surfaces based on the measurement of
the kinetic energy of photoelectrons emitted bysoft X-ray irradiation.

Specifications
SampleSensitivity: 700000 cps at half-width 1.15 eV in Ag 3d 5/2(Mg 300 W equivalent)
Resolution: FWHM 0.8 eV at Mo 3d 5/2
Max 10 mmφ, Thickness 5 mm, Max 10 loading possible

X-ray Gun Conical type, Anode Mg, Voltage 0 - 12 kV
Analyser

Retarding field analyser, Pass energy 25, 75, 150 eV

EnergyScanning -10 - 1150 eV (Mg), Accuracy ±0.2 eV

13

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 23
Name

General Purpose SEM

Model No.

S-3000N

Manufacture

Hitachi High-Tech

Location

Joint Research Laboratory 104

Adviser

Ishikawa Makoto

Staff

Hirata Hisashi

Features
It obtains images by irradiating with a scanning electron
beam onto a sample in a high vacuum and detecting theejected electrons. The secondary electron image is usu-

ally observed, but the backscattered electron image canalso be observed, which isuseful for observing non-conductive organisms. The
use of a cool stage allows observation at low tempera-

Resolution: SE image 3.5 mm, BSE image 5.0 mm

Specifications

Filament: tungsten hairpin filament
Electron Optical
Accelerating voltage: 0.3 - 30 kV
SystemProbe current: 1-12 - 1-7 Atures and reduces damage to the specimen caused by

the heat generated by electron beam irradiation.

Magnification: 15 - 100,000x(depending on various parameters)

Stage

Movement range:
horizontal move 32 x 32 mm, tilting ±90°, rotation 360°
Cool stage: temperature range - 20 to + 10 ℃

No. 24
Name

Ion Coater

Model No.

SC-701AC

Manufacture

Sanyu Electron

Location

Joint Research Laboratory 104

Adviser

Murakami Kenji

Staff

Ishikawa Makoto

Features
It applies a thin coating of Au onto a non-conducting
specimen for SEM observation.
The Au coating films typically have a thickness rangeof 3 - 5 nm.

Specifications

14

The discharge gas : Air
Standard ion current : 5 mA

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 25Name

Ion Milling

Model No.

EM RES101

Manufacture

LEICA

Location

Joint Research Laboratory 104

Adviser

Murakami Kenji

Staff

Ishikawa Makoto

Features
It prepares TEM samples with ion beams.

No. 26
Name

Soft Etching

Manufacture

meiwafosis

Location

Joint Research Laboratory 104

Adviser

Murakami Kenji

Staff

Ishikawa Makoto

Features
It's used to remove a contamination layer on sample
surface.

15

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 27Name

Pt Sputter

Model No.

JFC-1600

Manufacture

JEOL

Location

Joint Research Laboratory 104

Adviser

Ishikawa Makoto

Staff

Miyake Aki

FeaturesThis is specimen coating device for SEM. You can
use this machine to coat a non-conducting specimen
with Pt.

No. 28Name

Cross-section Polisher

Model No.

IB-09020 CP

Manufacture

JEOL

Location

Joint Research Laboratory 104

Adviser

Ishikawa Makoto

Staff

Koyama Tadanobu

Features
It's used to prepare a cross-sectional sample.

16

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 29Name

On-site FE-SEM

Model No.

JSM-7001F

Manufacture

JEOL, etc.

Location

Joint Research Laboratory 104

Adviser

Murakami Kenji

Staff

Ishikawa Makoto

Features
The field-emission electron gun enables observation at ultra-high magnification.
It also enables the high magnification observation at low voltage by using a TTL (ThroughThe Lens) detector.

Magnification

SEI: 10 - 1,000,000x (under the best conditions)Electron Gun

In-lens thermal FEG

Observation Mode

SE image, BSE image, TTL

Analysis

EDS (Energy Dispersive X-ray Spectroscopy)
EBSD (Electron Backscatter Diffraction)

No. 30Name

FE-EPMA

Model No.

JXA-8530F

Manufacture

JEOL

Location

Joint Research Laboratory 104

Adviser

Murakami Kenji

Staff

Koyama Tadanobu

Features
The FE-EPMA is an instrument which tells us whichelements compose a substance, their composition ratios,
and their distribution, by detecting characteristic X-rays
derived by irradiated with a focused electron beam. Additionally, you can also obtain the surface shape withSE (secondary electron) images and BSE (backscatteredelectron) images.

Accelerating Voltage

1 - 30 kV (0.1 kV step)

Probe Current

1 x 10-11 - 5 x 10-7 A (25 kV)

X-ray Spectrometry Range

0.087 - 9.3 nm

Number of X-ray Spectrometers

Up to 517

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 31Name

W-SEM

Model No.

JSM-6360LA

Manufacture

JEOL

Location

Joint Research Laboratory 1010

Adviser

Ishikawa Makoto

Staff

Miyake Aki

Features
It is a general-purpose SEM. Its filament is tungsten(W). Observation at magnifications of up to 10,000x
is possible. Low vacuum mode is equipped.

Specifications

Resolution:
3.0 nm (at High Vacuum Mode and 30 kV)
4.0 nm (at Low Vacuum Mode and 30 kV)
Magnification: 5 - 300,000x (5x possible)

SampleMax 32 mmφ

Electron Gun

Accelerating voltage: 0.5 -30 kV

Type of Image

SE image (HV mode), BSE image (LV mode)

Sample Exchange Stage draw out type

No. 32Name

XRD

Model No.

RINT Ultima II

Manufacture

RigakuLocation

Joint Research Laboratory 1010

Adviser

Shimomura Masaru

Staff

Koyama Tadanobu

FeaturesThis is a previous model of the Thin Layer XRD(No.N1), which is optimized for thin film analysis. It
can measure as well as No.N1.

18

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 33Name

NMR

Model No.

Avance Ⅲ HD400

Manufacture

BRUKER

Location

Innovation and Social
Collaboration Building 208

Adviser

Tanaka Yasutaka

Staff

Hayakawa Toshihiro

Features
Nuclear Magnetic Resonance

No. 34Name

Mass sSpectrometer

Model No.

micrOTOF

Manufacture

BRUKER

Location

Innovation and Social
Collaboration Building 208

Adviser

Tanaka Yasutaka

Staff

Hayakawa Toshihiro

Features
Mass Spectrometer19

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. 35
Name

Shape Mesuring Instrument

Model No.

VR-3200

Manufacture

KEYENCE

Location

Joint Research Laboratory 102

Adviser

Ishikawa Makoto

Staff

Ishikawa Makoto

FeaturesNon-contact measurement of a wide range of 3D

No. 36Name

3D PrinterModel No.

Bellulo200

Manufacture

Systemcreate

Location

Joint Research Laboratory 101

Adviser

Ishikawa Makoto

Staff

Hayakawa Toshihiro

Features
It is an FDM 3D printer. The filament types are PLA and
ABS. A software "Simplify3D" attaches. You can start 3D
printing soon by bringing your STL data.

20

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. N1

Incident X-ray

CuKα parallel beam collimatedby multilayer mirror

Samplesthin films and powders

Name

Thin Layer XRD

Model No.

RINT Ultima III

Manufacture

RigakuMeasurement
Methodprofile measurement(Out-of-plane, In-plane)

Location

Center for Nanodevice Fabrication and Analysis

Miscellaneous

Database( PDXL) is introduced.

Adviser

Shimomura Masaru

Staff

Koyama Tadanobu

Features
The X-ray diffraction (XRD) is the technique which characterizes lattice
constants, crystal structures, crystallinity , crystallite sizes, orientations
with X-ray diffraction, which is caused by an incident X-ray and periodic structure of the substance. This instrument is equipped with a sample
stage for thin films, and optimized for characterizing the structure ofthin films. In-plane measurement, which characterizes crystal planes
parallel to the sample surface, can be taken. Of course, so can out-ofplane measurement, which characterizes crystal planes perpendicular tothe sample surface.

No. N2Name

Pt / Carbon Coater

Model No.

SC701C

Manufacture

Sanyu Electron

Location

Center for Nanodevice Fabrication and Analysis

Adviser

Ishikawa Makoto

Staff

Ishikawa Makoto

Features
It forms carbon and platinum thin films on the surface of nonconductive samples for SEM observation.

21

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. N3
Name

Wide Area AFM

Model No.

XE-70

ManufacturePark Systems

Location

Center for Nanodevice Fabrication and Analysis

Adviser

Ishikawa Makoto

Staff

Miyake Aki

FeaturesThis is the Atomic Force Microscope (AFM), which allows
even beginners to make high magnification and high quality
observations. The included optical microscope allows direct
Specifications

observation of the sample surface from above with the cantilever attached, making it highly accessible and extremely easy

Horizontal resolution: less than 1.5 nm
Vertical resolution: less than 0.05 nm
Z-axis coarse resolution:
0.08 μm (stroke: 27.5 mm)

to adjust the optical path. True non-contact observation is

SampleMax 100 mm x 100mm x T 20 mm

possible because of the mechanical independence of the XY

Scanning Range

Max 50 μm x 50 μm x 12 μm

Optical Microscope

XGA 1024 x 768 pixel CCD(flame max 20 Hz)

Field of View

480 μm x 360 μm

and Z scans and the high response frequency of the wide-area

Z-axis drive (liner movement mechanism).

No. N4
Name

FE-SEM

Model No.

JSM-6335F

Manufacture

JEOL

Location

Center for Nanodevice Fabrication and Analysis

Adviser

Murakami Kenji

Staff

Ishikawa Makoto

Features
It is a scanning electron microscope equipped with a fieldemission electron gun. It is also equipped with an optional
electron beam lithography system, which can be used for microfabrication and creation of nano-machines.
Electron Gun Field-emission electron gun
Accelerating voltage: up to 30 kV

Remarks

22

Equipped with electron beam lithography system

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. N5Specifications

Resolution:
1.2 nm (at 30kV), 3.0 nm (at 1 kV)

Name

Analysical FE-SEM

Model No.

JSM-7001F

SampleMax 150 mmφ, height limit 10 mm

Manufacture

JEOL

Electron Gun

Cold field-emission electron gun
Accelerating voltage 0.2 ~ 30 kV

Location

Center for Nanodevice Fabrication and Analysis

Type of Image BSE image (COMPO image, TOPO image)

Adviser

Murakami Kenji

Staff

Ishikawa Makoto

Magnification: 10 - 1,000,000x

SE image

EDS

Resolution: 123 eV
Detectable elements: Be - U

Features
It is a scanning electron microscope equipped with a field-emission
electron gun and an energy dispersive X-ray spectrometer. It enables not only high-resolution surface morphology observation in thelow- and medium-voltage regions, but also elemental analysis ofsamples and orientation analysis of crystalline samples.

No. N6Name

FIB

Model No.

JIB-4500

Manufacture

JEOL

Location

Center for Nanodevice Fabrication and Analysis

Adviser

Sakamoto Naonori

Staff

Shimizu Hikaru

Features
FIB enables microfabrication at the nanoscale by irradiating asample with a convergent Ga ion beam and stripping away
atoms from a sample surface. It is also used to cut out samples
for STEM. In addition to an ion gun for FIB, this system is

Ion source: Ga liquid metal ion source
Accelerating voltage: 1 - 30 kV
Specifications
Magnification: 100 ~ 300,000x
of FIB Part
Imaging resolution: 5nm (at 30 kV)
Beam current: 0.5 pA - 30 nA (at 30 kV)

also equipped with an electron gun for SEM and an EDS detector, allowing surface morphology observation and elemental
analysis to be performed simultaneously with microfabrica-

Accelerating voltage: 0.3 - 30 kV
Specifications
Magnification: 5 - 300,000x
of SEM Part
Imaging resolution: 2.5nm (at 30 kV)

tion.

23

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. N7
Name

Ion Slicer

Model No.

EM-09100 IS

Manufacture

JEOL

Location

Center for Nanodevice Fabrication and Analysis

Adviser

Sakamoto Naonori

Staff

Shimizu Hikaru

FeaturesThis is a thin film sample preparation equipment. It irradiate themasking belt set on the sample surface with an ion beam toform a thin area.

No. N8Name

XPS/SIMS

Model No.

AXIS ULTRA DLD

Manufacture

SHIMADZU

Location

Center for Nanodevice Fabrication and Analysis

Adviser

Shimomura Masaru

Staff

Miyake Aki

Features
In an ultra-high vacuum, the sample is irradiated with X-rays
from the anode (Al, Mg) and the energy of the knocked-out
electrons (photoelectrons) is measured to determine the typeand bonding state of the atoms at the top surface of the sample(within a few nm). Mapping and depth analysis with the cluster
ion gun are also possible. The Al ion gun is equipped with amonochromator. It also has a neutralisation gun to avoid sample charging.

24

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. N9Name

STEM

Model No.

JEM-2100F

Manufacture

JEOL

Location

Center for Nanodevice Fabrication and Analysis

Adviser

Sakamoto Naonori

Staff

Shimizu Hikaru

Specifications

Resolution:
0.1 nm (lattice image)
0.23 nm (particle image)
0.2 nm (STEM image)
Magnification:
50 ~ 6,000x (low)2,000 ~ 1,500,000x (high)Electron Gun

Thermal field-emission electron gun
Accelerating voltage 200 kV

Type of Image

TEM image, STEM image, SE image, Electron
diffraction pattern, etc.

EDS

Detectable elements: B - U
Resolution: 138 eV*Qualitative analysis

Analysis Function *Standardess quantitative analysis

Features*High-speed X-ray mapping

STEM is a transmission electron microscope equipped witha field-emission electron gun. It enables ultra-high resolution image observation and analysis at the nanoscale. A
high-sensitivity scanning transmission imaging system(STEM) and an energy-dispersive X-ray analyzer (EDS) areincorporated to obtain various data efficiently and easily. It
is also equipped with CCD cameras, which enables image
observation on the monitor and saving of images in elec-

tronic file format.

No. N10
Name

Carbon Evaporator

Model No.

JEC-560

Manufacture

JEOL

Location

Center for Nanodevice Fabrication and Analysis

Adviser

Ishikawa Makoto

Staff

Miyake Aki

FeaturesThis is specimen coating device for SEM. A fine stream ofcarbon is deposited onto a non-conducting specimen.

25

Shizuoka University, Hamamatsu Instrumental Analysis Center
No. N11
Name

Solar Simulator

Model No.

VK-SS-50, VK-IPCE-10

Manufacture

SPD Laboratory, Inc.

Location

Center for Nanodevice Fabrication and Analysis

Adviser

Murakami Kenji

Staff

Shimizu Hikaru

FeaturesThis device measures the I-V characteristics, etc. of solar cells by exposing them to LED-simulated sunlight.
In addition, IPCE characteristics can be measured.
Light source

22 LEDs (70mW/cm2, 0.01SUN～1SUN)

Exposure area

50mm×50mm

Spectral response measuring instrument

Constant energy or constant photon irradiation (10mm×10mm), 100μW

Measurements

I-V measurement (±10V, ±1A(1pA possible)), optimum operating point, maximum output operating voltage, maximum output operating current, open circuit voltage, short circuit current, curve
factor, conversion efficiency, maximum power point tracking (MPPT) function, IPCE measurement, spectral response (A/W) (350nm～1000nm)

No. N12Name

Surface Area Analyzer

Model No.

TriStarⅡ Plus

Manufacture

SHIMADZU

Location

Center for Nanodevice Fabrication and Analysis

Adviser

Sakamoto Naonori

Staff

Hayakawa Toshihiro

Features
It can measure the specific surface area and pore distributionof solid and powder samples.

■spec
Adsorption gas

NitrogenSpecific surface area range

0.01 m2/g or more

Pore size range

1～100 nm26