Radiation image sensor
with SOI technology

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$>4.;6F.@6<;       OutlineI.! Introduction
II.! SOI Pixel Process
III.!SOIPIX Detectors
IV.! Advanced R&D
V.! SummaryI. Introduction
High Energy Accelerator
Research Organization (KEK)

International LinearCollider Project
30 km LongKEK Tokai
J-PARC(30 GeV Proton)

KEK Tsukuba
Super KEKB
(4 GeV e+ - 7 GeV e-)
Photon Factory(2.5 & 6.5 Gev Sync. Rad.)

By Colliding Accelerated Beams,
Many Secondary Particles are GeneratedWe must measure their position
and timing in µm and ns precision.
ATLAS Detector@CERNSilicon Vertex Detector    Visible Light(~2 eV)Sensing Part+-+ -~3µm

Charged Particle ( > MeV)
+ + + + -X-ray(<20keV)

Si+ +-Visible Light ~ 1 e-h / 1 photon
High Energy Particle ~ 80 e-h / µm
X-ray
~ 3000 e-h @10 keV

Si~50µm~300µm

SiX-ray(>20keV), !-raySi+ +->300µme-Present Advanced Pixel Radiation Sensor(Sensor and LSI Hybrid with large number of bump bondings)

(from Medipix picture)

Large number of metal bump bondings.
!! Performances are limited by the bump size.
!! Large unwanted materials which bend particle track.
!!

Silicon-On-Insulator Pixel Detector (SOIPIX)"<;<96@5602@20@<>5.B6;436;2>2?<9A@6<;<3?6960<;
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Particle

ChargedParticle
Gate Oxide

Gate
Si, -
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Bulk Device

Gate
Si

Depletion
Layer, -Buried
Oxide
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SOI Device

SOI has higher soft error immunity due to its ultra thinbody Silicon.
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•! No mechanical bonding. Fabricated with semiconductor
process only, so high reliability, low cost are expected.
•! Fully depleted thick sensing region with Low sense
node capacitance.
•! On Pixel processing with CMOS transistors.
•! Can be operated in wide temperature (and has low single event cross section.
•! Based on Industry StandardTechnology.

>.;42We operate
Multi-Project Wafer (MPW)
run. (~twice/year)

KEK

Shizuoka U. JAXA/ISAS RIKEN
Lawrence Berkeley Nat'l Lab.
Fermi Nat'l Accl. Lab.

Osaka U.IHEP/IMECAS/SARI China

Kyoto U.AGH & IFJ, Krakow
Louvain Univ.
U. Heidelberg

Tohoku U.
Hokkaido U.
Tsukuba U.

Kanazawa I.T.

AIST

Only one SOI radiation pixel
process in the world!


II. SOI Pixel Process

MPW Run Mask
24.6 x 30.8 mmLapis Semi.(*) 0.2 µm FD-SOI Pixel Process%><02??

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(*) Former OKI Semiconductor Co. Ltd.

Main Issue in the SOIPIX:
Back-Gate Effect/.0805.;;29<=2;
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"$'(>Detector Voltage act
as a Back Gate of theTransistors, and openback channel.
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SOPHIAS by RIKEN

Produce 26.7 mm x 64 mm
Sensing Area (3 Stitching).A332>
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III. SOIPIX Detectors 

An example of SOIPIX:
Integration Type Pixel (INTPIX)
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18.4 mm
INTPIX5INTPIX4Pixel Size : 17 um x 17 um
No. of Pixel : 512 x 832 (= 425,984)
Chip Size : 10.3 mm x 15.5 mm
Vsensor=200V, 250us Int. x 500
X-ray Tube : Mo, 20kV, 5mA

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X-ray Image of a small dried sardine taken by
a INTPIX4 sensor (3 images are combined).



RA

Examples of X-ray Image with the SOIPIX

PF-AR NE7A 33.3keV
Acrylic resin 40mm
200us x 250 frames

Arb. unit
8700

Needle8.704mm

Acrylic ResinStent Wire(INTPIX4)

-46000

14.144mm

CAExamples of SOIPIX Imaging" #&"!&$"!%$#&$'  )
("&"noise 18e- rmsIV. Advanced R&D

Double SOI waferSensor and Electronics are located very near. This cause ..

BPW

At first, we successfully introduced BPW layer to remove theback gate effect.
Then we newly introduced additional conductive layer under thetransistors to reduce all effects (" Double SOI).

Metal 5

Middle Si

Transistor

Metal 1Middle Si
Contact

SensorContact New Sensor Structures

20µm
1µm

•! Deplete from Back Side•! Very Low Input Capacitance•! Lower Leakage current•! Better charge collection

Shizuoka Univ. STJ (Superconducting Tunnel Junction) on SOI
Tsukuba Univ. : Detection of Far Infra Red Photon Signal from Nb/Al STJ on SOI

SOI transistors work attemperature below 1K.
By building STJ sensors
on SOI, multiple
channel readout
becomes possible!

NMOS
at 960mK

PMOS
at 750mK 

V. Summary•! '$%6D29=><02??C56056;@24>.@2/<@5>.16.@6<;?2;?<>?
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