APAC$SILICIDE$2019$PROGRAM$
July 20, 2019!
13:00—13:10 Opening address, Prof. Haruhiko Udono, Chair of APAC-SILICIDE 2019
Session Sat-1 Ca-silicides and clathrates (Chair: Prof.H. Tatsuoka, Prof.T. Kume)
13:15—13:45 [Sat-p-I1] Invited
Semitransparent and conductive CaSi2 films for silicon device applications
Prof. Nikolay Galkin
Russian Academy of Science, Russia
13:45—14:15 [Sat-p-I2] Invited
Semiconducting ternary Si clathrates
Dr. Motoharu ImaiNational Institute for Materials Science, Japan
14:15—14:30 [Sat-p-O1]
Growth of Ge Clathrate on Sapphire and Optical Properties
Rahul Kumar, T. Maeda, Y. Hazama, F. Ohashi, H. S. Jha, T. Kume
Gifu University, Japan
14:30—14:45 [Sat-p-O2]
Sacrificial growth in Ca2Si(010)/Mg2Si(111)/Si(111) system: morphology, atomic
structure and optical properties of Ca2Si epitaxial films
K.N. Galkin, N.G. Galkin, S.A. Dotsenko, E.Y.Subbotin, E.A.Chusovitin
Russian Academy of Science, Russia
14:45—15:00 [Sat-p-O3]
Growth and fluorination of a tr6-CaSi2 thin layer
Kenji Ito1, Tetsu Ohsuna1, Takashi Suemasu2 and Hideyuki Nakano1
1
Toyota R&D, Japan, 2University of Tsukuba, Japan
15:00—15:15 [Sat-p-O4]
Synthesis of Si Nanowire/Nanosheet Complex Structures from CaSi2 crystals by
Thermal Treatment under MnCl2/NH4Cl Vapors
Shogo Itoh1, Yushin Numazawa1, Yoshiki Ono1, Yalei Huang1, Yosuke Shimura1,
Hirokazu Tatsuoka1, and Naohisa Takahashi4
1
Shizuoka University, Japan, 2Yamaha, Japan
Break 15:15—15:30
15:30—17:30 Poster Session(Chair: Dr. K. Yamaguchi)

6July 21, 2019
Session Sun-2 Silicides for optical applications I (Chair: Prof. D. Migas, Dr. O. Isabera)
8:45— 9:15 [Sun-a-I3] Invited
Electronic and defect properties of semiconducting barium disilicide
Dr. Naoto Umezawa
National Institute for Materials Science, Japan
9:15— 9:30 [Sun-a-O5]
Electron paramagnetic resonance spectra of BaSi2 epitaxial films and bulk samples
T. Sato1,2, Y. Yamashita1, Z. Xu1, L. Benincasa1,2, K. Toko1, S. Gambarelli2, T. Suemasu1
1
University of Tsukuba, Japan, 2University of Grenoble-Alpes, France
9:30— 9:45 [Sun-a-O6]
Significant improvement on photoresponsivity and minority carrier lifetime of atomic H
passivated BaSi2 epitaxial films
Z. Xu1, K. Gotoh2, T. Deng1, K. Toko1, N. Usami2, D. Migas3, T. Suemasu1
1
University of Tsukuba, Japan, 2Nagoya University, Japan	 3Belarusian State University of Informatics and Radioelectronics, Belarus
9:45—10:00 [Sun-a-O7]
The interrelation of optical and photoelectric properties in SPE grown BaSi2 films on
Si(111) substrates and photodiode structures on their base
N.G. Galkin1,2, D.L. Goroshko1, V.L. Dubov2, D.V. Fomin2, K.N. Galkin1,
E.A.Chusovitin1, S.V. Chusovitina1
1
Russian Academy of Science, Russia, 2Amur State University, Russia
10:00—10:15 [Sun-a-O8]
Investigation of defect levels in undoped-BaSi2 epitaxial films and the effect of atomic
hydrogen passivation by photoluminescence measurement
L. Benincasa1,2, H. Hoshida3, T. Deng1, T. Sato1,2, Z. Xu1, K. Toko1, Y. Terai3, and T.
Suemasu1
1
University of Tsukuba, Japan, 2University of Grenoble-Alpes, France
3
Kyushu Institute of Technology, Japan
Break 10:15—10:30
Session Sun-3 Silicides for optical applications II (Chair: Prof. T. Suemasu, Prof. H. Udono)
10:30—11:00 [Sun-a-I4] Invited
Recent advancements in the development and characterization of BaSi2 for photovoltaic
applications
Dr. Olindo Isabella
Delft University of Technology, The Netherlands
11:00—11:15 [Sun-a-O9]
Physicochemical study of BaSi2 evaporation for composition-controlled film deposition
Kosuke O. Hara, Keisuke Arimoto, Junji Yamanaka, and Kiyokazu Nakagawa
University of Yamanashi, Japan7

11:15—11:30 [Sun-a-O10]
Influence of the time-dependent vapor composition on structural properties of the BaSi2
thin films fabricated by vacuum evaporation
T. Yoshino, Y. Kimura, M. Fujiwara, Y. Nakagawa, Y. Kurokawa, N. Usami
Nagoya University, Japan
11:30—11:45 [Sun-a-O11]
Molecular Beam Epitaxy of High-quality Undoped BaSi2 Light Absorbers using Threestep Growth Method
Yudai Yamashita, Takuma Sato, Kaoru Toko, Takashi Suemasu
University of Tsukuba, Japan
11:45—12:00 [Sun-a-O12]
Fabrication of As-doped n-type BaSi2 Films Grown by Molecular Beam Epitaxy
Sho Aonuki, Yudai Yamashita, Kaoru Toko and Takashi Suemasu
University of Tsukuba, Japan
12:00—12:15 [Sun-a-O13]
Temperature Dependent Spectral Photosensitivity of Mg2Si pn-junction Photodiodes
D. Niioka1, F. Takahashi1, M. Yoshida2, D. Tsuya2, H. Udono1
1
Ibaraki University, Japan, 2National Institute for Materials Science, Japan
12:15—12:30 [Sun-a-O14]
Photoreflectance spectra of highly-oriented Mg2Si(111)//Si(111) films
R. Kinoshita1, H. Hoshida1, A. Shevlyagin2, I. Chernev2, A. Gouralnik2, and Y. Terai1
1
Kyushu Institute of Technology, Japan, 2Russian Academy of Science, Russia
Lunch Break 12:30—13:30
Session Sun-4 Thermoelectric materials I (Chair: Prof. Y. Miyazaki, Prof. M. Zebarjadi)
13:30—14:00 [Sun-p-I5] Invited
Thermoelectric Properties of Nanocrystalline Silicon using Recycled Silicon Sawing
Waste
Dr. Gabi Schierning
Leibniz-Institute IFW Dresden, Germany
14:00—14:30 [Sun-p-I6] Invited
Potential of Nanostructured Silicon for Thermoelectrics
Prof. Ken Kurosaki
Kyoto University, Japan
14:30—14:45 [Sun-p-O15]
High Thermoelectric Performance of Flexible p-type SiGe Films Formed by HighImpurity Doping Technique
Mikie Tsuji, Kinta Kusano, Takashi Suemasu, and Kaoru Toko
University of Tsukuba, Japan8

14:45—15:00 [Sun-p-O16]
Thermoelectric Properties of Heavily doped Nano-structured n-type Silicon-Germanium
AlloysS. Ghodke1, M. Omprakash1, K. Delime-Codrin1, M. Adachi3, M. Kiyama3, T.
Matsuura3, Y. Yamamoto3, and T. Takeuchi1,2
1
Toyota Technological Institute, Japan, 2PRESTO-JST, Japan
3
Sumitomo Electric Industries, Ltd.
15:00—15:15 [Sun-p-O17]
Effects of precipitated fine secondary phase on thermoelectric properties of CrSi2
Kai Uemura, Masaaki Baba, and Masatoshi Takeda
Nagaoka University of Technology, Japan
Break 15:15—15:35
Session Sun-5 Thermoelectric materials II (Chair: Prof. K. Kurosaki, Dr. G. Schierning)
15:35—16:05 [Sun-p-I7] Invited
Recent progress in silicide thermoelectric materials
Prof. Yuzuru Miyazaki
Tohoku University, Japan
16:05—16:35 [Sun-p-I8] Invited
Thermoelectric transport at organic-silicon interface
Prof. Mona Zebarjadi
University of Virginia, USA
16:35—16:50 [Sun-p-O18]
Local structures of Sb and Ag in Mg2Si crystals studied by EXAFS analysis
M. Kitaura1, T. Ina2, M. Ishizaki1, T. Tanimoto1, Y. Fuse3, R. Masubuchi3, H. Udono3,
A. Ohnishi1, K. Hara4
1
Yamagata University, Japan, 2JASRI/SPring-8, Japan, 3Ibaraki University, Japan
4
Shizuoka University, Japan
16:50—17:05 [Sun-p-O19]
Preparation of Mg2Si-based thin films and these properties
A. Katagiri1, M. Uehara1, T. Shimizu1, M. Matsushima1, K. Akiyama1,2, H. Uchida3, Y.
Kimura1, H. Funakubo1
1
Tokyo Institute of Technology, Japan, 2Kanagawa Institute of Industrial Science andTechnology, Japan, 3Sophia University, Japan
16:05—17:20 [Sun-p-O20]
Thermoelectric properties of doped n-type Mg2Si with antimony and isoelectric
impurities
H. Kakio, T. Iida, D. Shiojiri, S. Shiba and M, Nakatani
Tokyo University of Science, Japan9

17:20—17:35 [Sun-p-O21]
Thermoelectric property of MxSr1-xSi2 (M = Ca, Ba) film prepared by co-sputtering
methodKodai Aoyama1, Takao Shimizu1, Hideto Kuramochi2, Masami Mesuda2, Ryo Akiike2,
Keisuke Ide1, Takayoshi Katase1, Toshio Kamiya1, Yoshisato Kimura1, and Hiroshi
Funakubo1
1
Tokyo Institute of Technology, Japan, 2Tosoh corporation, Japan
18:00— 18:15

Transfer to Cottage Himuka

18:30— 20:30

Banquet (Cottage Himuka, BBQ at Poolside)10

July 22, 2019
Session Mon-6 Low-dimensional materials I (Chair: Prof. N.G. Galkin, Prof. Y. Nakamura)
9:00—9:30 [Mon-a-I9] Invited
Possible 2D-like silicides: structure and electronic properties
Prof. Dimitri Migas
Belarusian State University of Info. & Radioelec., Belarus
9:30—10:00 [Mon-a-I10] Invited
Silicide and germanide formation in nanowires
Prof. Yi-Chia Chou
National Chiao Tung University (NCTU), Taiwan
10:00—10:15 [Mon-a-O22]
Improving Crystal and Electrical Properties of Multilayer Graphene on Insulator formedby Ni-Induced Layer Exchange
Hiromasa Murata, Yoshiki Nakajima, Takashi Suemasu, and Kaoru Toko
University of Tsukuba, Japan
10:15—10:30 [Mon-a-O23]
Tuning magnetic, transport and optical properties of FeSi2 nanocrystals: impact of gold
and Si/Fe flux ratio
I. Tarasov1, T. Smolyarova1,2, I. Nemtsev1, I. Yakovlev1, M. Volochaev1, L. Solovyov1,
S. Varnakov1, S. Ovchinnikov1,2
1
Russian Academy of Science, Russia, 2Siberian Federal University, Russia	 Break 10:30—10:50
Session Mon-7 Low-dimensional materials II (Chair: Prof. Yi-C. Chou, Prof. Y. Terai)
10:50—11:05 [Mon-a-O24]
Fabrication and evaluation of lateral type spin-valves comprising epitaxially-grown βFeSi2 layers
T. Sakai1, H. Ishimoto1, T. Tabei2, K. Sakai3, T. Yoshitake1
1
Kyushu University, Japan, 2Hiroshima University, Japan , 3Kurume College, Japan
11:05—11:20 [Mon-a-O25]
Formation of high density Fe-silicide nanodots induced by remote H2 plasma and theirmagnetic properties
Y. Hashimoto1, K. Makihara1, M. Ikeda1, A. Ohta1, A. Kohno2, S. Miyazaki1
1
Nagoya University, Japan, 2Fukuoka University, Japan
12:00— 18:00 Excursion

11

July 23, 2019
Session Tues-8 Growth of materials I (Chair: Dr. M. Imai, Prof. K. Hara)
9:00—9:15 [Tue-a-O26]
High-Pressure Synthesis and Superconductivity of Solid Solutions of LuGe3 and YGe3
with a Layered Structure
Hiroshi Fukuoka, Ryoya Hino, and Kei Inumaru
Hiroshima University, Japan
9:15—9:30 [Tue-a-O27]
Crystal structure and electrical resistivity of NaPd3Ge2
Takahiro Yamada1,2, Kohei Aiba1, Daigoro Hirai3, Zenji Hiroi3, Hisanori Yamane1
1
Tohoku University, Japan, 2PRESTO-JST, Japan 3University of Tokyo, Japan
9:30—9:45 [Tue-a-O28]
Solid-phase Crystallization of As-doped Amorphous Ge on Insulator Leading to theHighest Electron Mobility
M. Saito, K. Moto, T. Nishida, T. Suemasu, and K. Toko
University of Tsukuba, Japan
9:45—10:00 [Tue-a-O29]
Formation of Mg2Si1-xSnx Thin Films by Co-sputtering and Their p-Type Electrical
Conduction
Syotaro Fuse and Hiroshi Katsumata
Meiji University, Japan
Break 10:00—10:20
Session Tues-9 Growth of materials II (Chair: Prof. T. Yoshitake, Prof. T. Yamada)
10:20—10:35 [Tue-a-O30]
Synthesis of Mg2ASi thin film by thermal treatment under inert gas atmosphere andevaluation of film quality
I. Horiba, F. Michinobu, Y. Nakagawa, K. Gotoh, Y. Kurokawa, N. Usami
Nagoya University, Japan
10:35—10:50 [Tue-a-O31]
Photoresponsivity of a Pseudo-single-crystal GaAs Film Synthesized on Glass Using aLarge-grained Ge Seed Layer for Solar Cell Applications
Takeshi Nishida, Kenta Moto, Takashi Suemasu, and Kaoru Toko
University of Tsukuba, Japan
10:50—11:05 [Tue-a-O32]
Large-grained Polycrystalline Germanium Thin Films on Insulators with the Highest
Hole Mobility
Toshifumi Imajo, Kenta Moto, Takashi Suemasu, Kaoru Toko
University of Tsukuba, Japan
11:30—12:00 Closing and Ceremony 
12APAC$SILICIDE$2019$Poster$Session$
July 20, 201915:30—17:30

Poster session (Chari: Dr. K. Yamaguchi)

P1 Drastic enhancement of photoresponsivity in C-doped BaSi2 films formed by radio-frequency
sputtering
T. Nemoto1, S. Matsuno1, M.Mesuda2,H. Kuramochi2, K. Toko1, and T. Suemasu1
1
University of Tsukuba, Japan, 2Tosoh Corporation, JapanP2 Effect of BaSi2 template fabrication methods on the performance of p-BaSi2/n-Si heterojunction
solar cells
R. Sugiyama, K. Toko, and T. Suemasu
University of Tsukuba, Japan
P3 Vacuum evaporation of BaSi2 thin films on textured Si(100) substrates
Y. Naito, S. Nishio, and K. Nishino
Tokushima University, Japan
P4 Influence of post annealing conditions on carrier density of undoped evaporated BaSi2 films
Y. Kimura, M. Fujiwara, Y. Nakagawa, K. Gotoh, Y. Kurokawa, and N. Usami
Nagoya University, Japan	 P5 Influence of Ba to Si rate ratio on the properties of B-doped BaSi2 epitaxial films
S. Sugiyama1, Y. Kimura2, Y. Yamashita1, K. Toko1, N. Usami2, and T. Suemasu1
1
University of Tsukuba, Japan, 2Nagoya University,Japan
P6 Ca substitution effects on crystal structure and bandgap in BaSi2
M. Imai
National Institute for Materials Science, Japan
P7 Simultaneous realization of thermoelectric power factor enhancement and thermal conductivity
reduction in epitaxial Si films containing β-FeSi2 nanodots
S. Sakane1, T. Ishibe1, N. Naruse2, Y. Mera2, Md.Mahfuz Alam3, K. Sawano3, N. Mori1,4, and Y.
Nakamura1,4
1

Osaka University, Japan, 2Shiga University of Medical Science, Japan,
3
Tokyo City University, Japan, 4CREST-JST, Japan	
 P8 Photoluminescence properties of polycrystalline β-FeSi2 grown by RF magnetron sputtering
H. Nishi, N. Oka, and Y. Terai
Kyushu Institute of Technology, JapanP9 Dependence of electrical conduction properties on activation conditions in Sb-doped β–FeSi2
epitaxial films
M. Abe, H. Eguchi, H. Hoshida, and Y. Terai
Kyushu Institute of Technology, Japan	
 13

P10 Structural, Optical and AC Conductivity Studies on Amorphous-Si/β-FeSi2 Composite Thin
Films
Y. Saito and H. Katsumata
Meiji University, JapanP11 Epitaxial growth of β-FeSi2 thin films prepared by co-sputtering with high purity Fe and Si
targets
Y. Tanaka1, S. Uchida1, T. Yoshida2, and T. Yoshitake1
1
Kyushu University, Japan, 2Fukuoka Industrial Technology Center, Japan
P12 Local and non-local spin valves in Fe3Si/FeSi2/Fe3Si trilayer films
K. Sakai1, T. Sakai2, M. Nishijima3, and T. Yoshitake2
1
Kurume College, Japan, 2Kyushu Univ., Japan, 3Tohoku Univ., Japan
P13 First principle band calculations of Mg2Si thin films
M. Takizawa, T. Komine, H. Udono, and T. Aono
Ibaraki University, Japan	
 P14 Change of the band structure of Mg2Si induced by interstitial doping with non-metallic elements
Y. Imai1, A. Yamamoto1, and K. Takarabe2
1
AIST, Japan
2
Okayama University of Science, Japan
P15 Signatures of Mg9Si5 phase in Mg2Si films grown by different epitaxy modes: existence andmethod to control that
A. V. Shevlyagin1, I. M. Chernev1, A. S. Gouralnik1, S. A. Balagan1, A. V. Gerasimenko1, and T.
D. Huan2,3
1
Russian Academy of Science, Russia, 2Georgia Institute of Technology, USA
3
University of Connecticut, USA
P16 A simple and non-destructive method to determine the thickness of Mg2Si films grown on Si
substrates: recalibration of Mg sublimation source and the ways to increase its efficiency
I. M. Chernev, A. V. Shevlyagin, A. S. Gouralnik, A. K. Gutakovskii, and A. V. Gerasimenko
Russian Academy of Science, Russia
P17 Comparison of crystalline quality and electrical property of Mg2Si crystals grown using PBN
and PG graphite crucible
Y. Fuse, R. Masubuchi, T. Ishikawa, K. Gosyuu, and H. Udono
Ibaraki University, JapanP18 Temperature dependence of lifetime measured in Mg2Si pn-junction photodiodes by OCVD
methodF. Takahashi, D.Niioka, T. Miyauchi, and H. Udono
Ibaraki University, Japan
P19 Comparison of absorption coefficient of high purity n-type Mg2Si crystal and spectral
photosensitivity of Mg2Si pn junction photodiodeT. Miyauchi, D. Niioka, F. Takahashi, Y. Onizawa, and H. Udono
Ibaraki University, Japan

14

P20 Observation of crystal defects in Mg2Si single crystals by wet-etching technique using dilutied
Fluonitric acid
R. Masubuchi, Y. Fuse, and H. Udono
Ibaraki University, Japan
P21 Surface photovoltage effect on Mg2Si single crystals
T. Tanimoto1, M. Kitaura1, J. Azuma2, I. Yamamoto2, M. Imamura2, K. Takahashi2, H. Udono3, M.
Ishizaki1, A. Ohnishi1, and K. Hara4
1
Yamagata University, Japan, 2JASRI/SPring-8, Japan, 3Ibaraki University, Japan
4
Shizuoka University, JapanP22 Effect of irradiation conditions on the film growth of iron oxide on Si substrate by ion beam
sputter deposition method
K. Yamanaka1,2, and K. Yamaguchi2
1
Ibaraki University, Japan, 2QST, Japan
P23 Observation of Magnesium-Induced Crystallization (Mg-MIC) of a-Si Thin Film
T. Ikehata, R. Sasajima, M. Saijo, N. Sato, and H. Udono
Ibaraki University, Japan
P24 Transfer Free Synthesis of Multilayer Graphene on Insulator: Comprehensive Study ofCarbon/metal Solid-phase Reaction
Y. Nakajima, H. Murata, T. Suemasu, and K. Toko
University of Tsukuba, Japan
P25 Optical Properties of Amorphous and Nanocrystalline SiC Embedded in Silicon Oxide Films
Prepared by Co-sputtering
R. Narimatsu, K. Morimoto, and H. Katsumata
Meiji University,Japan
P26 Rapid solid state reaction synthesis of nanostructured Mg2Si via activated reactive mechanicalmilling at room temperature
B. Alinejad, Y. Yamamoto, and T. Ikeda
Ibaraki University, Japan
P27 Formation and properties of doped silicon nanostructures with embedded GaSb nanocrystals
for thermoelectric application,
D. L. Goroshko1, E. V. Chusovitin1, E. Y. Sobbotin1, S. V. Chusovitina1, S. A. Balagan1, K. N.
Galkin1, S. A. Dotsenko1, A. K. Gutakovskii1, V. V. Khovaylo2, and N. N. Galkin1
1
Russian Academy of Science, Russia, 2National University of Science and Technology MISiS,
Russia
P28 Growth and thermoelectric properties of composite thin films based on higher iron andmanganese silicides
I. Tarasov1, I. Yakovlev1, M. Volochaev1, T. Smolyarova1,2, A. Fedorov1, S. Varnakov1, and S.
Ovchinnikov1,2
1
Russian Academy of Science, Russia, 2Siberian Federal University,Russia	 15

P29 Structural analysis of guest free type II Si-Ge clathrate,
H. Hisamatsu, K. Yamada, F. Ohashi, H. S. Jha, and T. Kume
Gifu University, Japan	
 P30 XRD investigation of lithium silicide under high pressure
H. Iwasa, S. Ikemoto, F. Ohashi, H. S. Jha, and T. Kume
Gifu University, Japan	
 P31 Electronic properties of Na doped type II Ge clathrate film grown on sapphire substrate,
R. Tanahashi, Y. Hazama, F. Ohashi, H. Shekher Jha, and T. Kume
Gifu University, Japan	 P32 Growth of Si Clathrate Films with Various Annealing Conditions,
K. Tanaka, R. Kumar, T. Maeda, F. Ohashi, H. S. Jha, and T. Kume
Gifu University, Japan	
 P33 Synthesis of CaF2 Nanostructures from Calcium Silicide Powders in Diluted Aquarius HF
Solution,
Y. Ono1, Y. Numazawa1, S. Itoh1, Y. Huang1, Y. Shimura1, H. Tatsuoka1, and N. Takahashi2
1
Shizuoka University, Japan, 2Yamaha, JapanP34 Topological Synthesis of Mg-based Silicate Nanosheets from CaSi2 crystals,
Y. Numazawa, S. Itoh, Y. Ono, Y. Huang, Y. Shimura, and H. Tatsuoka
Shizuoka University
P35 Cross-sectional characterization of Mg2Si / Ni compacted with spark plasma sintering at 800oC
T. Ishii, H. Sugawara, M. Tokuda, H. Sato, T. Hanajiri, H. Shimoshige, S. Kurosu, K. Hayashi, I.
Ando, W. Saito, and Y. Miyazaki
1
Tokyo Metropolitan University, Japan, 2Toyo University, Japan, 3Tohoku University, Japan.

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