GDE001‐*

IGBT Driver
Application Manual1Consideration Needed for Safety Design
While our company has made significant effort to improve the quality and reliability of our products,
semiconductor application products cannot be completely free from faults and malfunctions.
Therefore, extreme care needs to be taken for safety design – for example, redundancy design, fire
spread prevention design, and malfunction prevention design – so that fault or malfunction of oursemiconductor application products will not result in an incident such as a fatal accident, fire
accident, and social problem.

Important Notes for Use of This Document‐ This document aims to help you choose and purchase our appropriate products which meet yourapplications. Regarding the technical information provided on this document, the implementation
and use of intellectual property rights and other rights which have been possessed by our company
are not granted by the document.
‐ Our company shall not be liable to a damage which attributes to the use of the product data,
figures, tables, programs, algorithms, and circuit application examples which are presented in thisdocument and to violation of rights possessed by third parties.
‐ The product data, figures, tables, programs, algorithms, and all other information presented in thisdocument are those which were the latest when the document was generated. These are subject tochange without notice for reasons such as improvement of characteristics. Therefore, before
purchasing our products, check the latest information with our sales representative.
‐ When using technical information shown in the product data, figures, and tables in this document,
perform thorough evaluation from the perspective of the entire system besides the technicalinformation itself, and judge on your account whether the technical information is applicable. Our
company shall not be liable to the applicability of our products.
‐ The products described in this document have not been designed and produced for use withequipment or system which is operated in an environment which involves human lives. If intending
to use the products, for special purposes – for example, transportation, medical applications,aerospace, nuclear power control, and submarine relay equipment or systems, contact our sales
representative.
‐ Reprint or reproduction of this document needs our written permission.
‐ For any inquiry about the contents written in this document, contact our sales representative.

ISAHAYA ELECTRONICS CORPORATION

2Contents● Features of ISAHAYA ELECTRONICS IGBT Drivers･･････・・・・・・・・・・・・・・・・4p● IGBT Driver Product Tree･･････・・・・・・・・・・・・・・・・4p● What is IGBT?

･･････・・・・・・・・・・・・・・・・5p● What is IGBT Driver?

･･････・・・・・・・・・・・・・・・・5p● Advantages of Containing Short‐Circuit Protection Circuit･･････・・・・・・・・・・・・・・・・6p● Operation of Short‐Circuit Protection Circuit･･････・・・・・・・・・・・・・・・・7p● Effectiveness of Latch/Timer Reset System in Short‐Circuit Protection Circuit ・・・・・・・・・8p● Collector Clamp Circuit Operations･･････・・・・・・・・・・・・・・・・9p● Gate Power Supply･････・・・・・・・・・・・・・・・・10p● Selection of Output Current Capacity of Gate Power Supply ･････・・・・・・・・・・・・・・・・11p● Derating by Power Consumption or Gate Average Current････・・・・・・・ ・・・・・・・・・11p● Gate Resistance･･･・・・・・・・・・・・・・・・・・・12p● Gate Driver Selection Guide･･・・・・・・・・・・・・・・・・13,14p● Input Gate Signal Drive Circuit･････・・・・・・・・・・・・・・・・15p● Wiring for Gate, Emitter and Power Supply･･･・・・・・・・・・・・・・・・・・・16p● Method for Deactivating Short‐Circuit Protection Circuit･･･・・・・・・・・・・・・・・・・・・16p

3

Features of ISAHAYA ELECTRONICS IGBT Drivers
Since around 1990, our company has developed and produced hybrid ICs for IGBT module drive to be used in the industrial
equipment field, and has accumulated experience and accomplishment for over 25 years. The characteristics of our productlineup are as follows:
Wide application range
A wide range of products – from 15A current capacity class to 3600A class IGBT modules – are available.
Built‐in short‐circuit protection circuit
Most of our products contain short‐circuit protection circuits which are effective to prevent IGBTs from being damaged in termsof short‐circuit.
Wide structure variation
Wide structure variation (e.g., SIL, DIL, and unit type) serves to make your products smaller and to simplify your productassembly.
Provision of gate power supplies
Besides gate drive circuits, products which contain gate power supplies are available, so that an appropriate product can bechosen depending on equipment design conditions.
Effective to standardization of equipment designStandardization is essential to improve design efficiency in the present situations where the shortage of analog engineers has
been claimed.
Design standardization and component standardization are possible by using ISAHAYA ELECTRONICS gate drivers in gate drive
circuits.

SIL

DIL

IGBT‐non‐mountable unit type

IGBT‐mountable unit type

IGBT Driver Product Tree

Non‐Built‐in Power
Supply TypeVLA507 / VLA513
M57159L / M57959AL
M57962AL / M57962CL
VLA520 / VLA531
VLA541 / VLA542
VLA546

Built‐in Power
Supply TypeVLA500 / VLA500K
VLA502 / VLA551
VLA551K / VLA552
VLA554 / VLA567

Built‐in Power
Supply TypeVLA536 / VLA553
VLA555 / VLA559

Hybrid IC TypeIGBT Driver
IGBT‐Mountable UnitType

IGBT‐Non‐Mountable
Unit Type

Built‐in Power
Supply TypeGAU205S‐15252
GAU205P‐15252A
GAU205P‐15402
GAU208P‐15252
GAU212S‐15255
GAU212P‐15255
GAU405P‐15252
GAU605P‐15252

4

What is IGBT?
An IGBT stands for Isolated Gate Bipolar Transistor. (Its element symbol is shown in the figure below.)
It is a power device having a combination of the following good characteristics: large power characteristics of bipolar transistors andhigh‐speed switching and voltage drive characteristics of MOSFET.
Collector

ＣＣＧ

Gate

ＣＣＥ
Applications

ＣＧＥ

General‐purpose inverter, UPS, AC servo
robot, welding machine, large‐type power
supply unit, solar power generation, wind‐
power generation, induction heating
equipment, etc.

Emitter
Charged/discharged current toswitch ON/OFF the gate

Cies = CCG + CGE
IGBT is a voltage drive type element.
While an IGBT is a voltage drive type element, charge/discharge for input capacity (Cies) is needed to turnon and off the gate because of the presence of capacity between the individual terminals as shown above.
Therefore, switching an IGBT needs a gate charge/discharge circuit. One gate drive circuit is needed foreach IGBT element.

What is IGBT Driver?
The figure below is a block diagram which outlines a gate drive circuit.
A gate drive circuit is mainly composed of three sections.
One is an opto‐coupler which electrically isolates signals. Another is an interface circuit which receives andamplifies signals which come from the opto‐coupler. The other is a switching transistor which serves to charge
and discharge the IGBT gate capacity.
When an IGBT is switched on, the gate voltage needs positive bias to 15V. When it is switched off, the gate
voltage needs negative bias to around ‐10V.
The gate capacity charge and discharge which are needed at this time must be executed at high speed.
The ISAHAYA ELECTRONICS IGBT drivers are hybrid ICs which integrate drive circuits for high‐speed gate capacity
charge and discharge following reception of signals.

Vcc=+15V
IGBT Module

IGBT Driver
Short‐Circuit
Detection Circuit

Opto‐coupler

Ig_ON
Interface andAmplifier

ON/OFF Gate Signal
from Logic IC

Ig_OFF
Gate Shutdown
CircuitElectrical Isolation
Signal Conversion

Gate Signal
Amplification

Current
Amplification

Vee=‐10V(‐6 ~ ‐10)5Advantages of Containing Short‐Circuit Protection Circuit
Typically, it is desirable to perform IGBT short‐circuit protection by switching off the gate at 10µs or less.
For the purpose of this high‐speed protection, ISAHAYA ELECTRONICS IGBT drivers (with some exceptions) contain short‐circuit protection circuits. The product can be made smaller by building a gate drive circuit and short‐circuit protection
circuit in one hybrid IC. As another advantage, since a short‐circuit detection circuit and gate shutdown circuit are
immediately near a gate drive circuit, coordination among the circuits is easy: immediately after short‐circuit is detected,
gate output can be shut down easily.
If a gate drive circuit and detection circuit are placed separately and detected signals are sent to an input‐side CPU to stop
gate signals, it may take time to switch off the gate and thus it is highly probable that element damage is resulted.
Short‐Circuit Protection Circuit

Vcc
4

Latch
14

Detection
Circuit1

Detection Terminal

IGBT
ModuleTimer andReset Circuits
RG
Interface andAmplifierOpto‐coupler
13

5
Gate
Shutdown
CircuitVo

8 Alarm Output
6

VEE

VLA542‐01R (Representative Model) Function Block Diagram

6

Operation of Short‐Circuit Protection Circuit
The short‐circuit protection circuit built in the IGBT driver recognizes short‐circuit status and immediately lowers the gate voltage
when the gate output is ON and the collector voltage of the IGBT is high. At the same time, the protection circuit makes alarm signals
be output from the alarm output terminal at “L” to tell that the protection circuit is functioning.
The figure below shows an example of operation waveform generation which takes place when short‐circuit occurs after the IGBT isswitched on.
When short‐circuit occurs, the collector current increases rapidly, followed by the increase of the collector voltage. The output of thecomparison circuit shown in the short‐circuit protection circuit function block diagram below is reversed due to increase of thecollector voltage, and the latch and timer circuits start to operate, switching on Q1. Then, the Vout decreases slowly, resulting in slow
decrease of the IGBT gate voltage and soft shutdown. Soft shutdown which decreases the gate voltage slowly suppresses increase ofsurge voltage which is generated when the short‐circuit current of is IGBT is shut down. The short‐circuit protection circuit of the
IGBT driver does not directly monitor the collector current of the IGBT: it monitors the voltage of the VCE. Therefore, note that high‐precision detection protection is not possible.
IC

VCE

Short‐circuit
occurrence
point

VCE: Large(Detection)

VGE

Soft gate shutdown for suppression of surge voltage

Alarm output voltage

Vcc (15V)
4

Vref

FRD
RP1H (Sanken) etc.

1
Vf × nComparison
Circuit

Vout

Interface andAmplifier

VCE

5

Latch
and
Timer

8
Q1

Alarm Output

Csoft
6

VLA542 Short‐Circuit Protection Circuit Function Block Diagram

VEE (‐10V)

The protection is performed by switching off the IGBT through the following sequence: short‐circuit occurrence ‐> VCE voltage
increase ‐> comparison circuit reverse ‐> Q1 turn on ‐> Vout (VGE) voltage decrease ‐> alarm output start ‐> IGBT turn off.
The VCE voltage output when short‐circuit is actually detected is resulted from the following equation: Vref (approx. 9.5V) – Vf
x n (where n is normally 1).
The data sheet shows 15V (minimum) as the short‐circuit detection voltage VSC. This designates that detection is certainly
possible at 15V or higher voltage.
The Csoft in the figure above is built in the gate driver. However, some products allow the gate decrease speed to be
adjusted by connecting Csoft to an external terminal and connecting an external capacitor to the terminal.
See the product list in the “Gate Driver Selection Guide” section which is presented later.
7

Effectiveness of Latch/Timer Reset System in Short-Circuit Protection Circuit
This section describes the characteristics of the short‐circuit
protection circuit of ISAHAYA ELECTRONICS IGBT drivers. Oncethe short‐circuit protection circuit starts to function, it shuts
down the gate output and keeps alarm output, causing the latch
status. This status is canceled if the input signal is OFF when
specific time elapses after the activation of the short‐circuit
protection circuit. Then, gate output depending on input signals
becomes possible. If the input signal is ON when specific time
elapses, the latch status is not canceled: it is canceled when thesignal becomes OFF.
The flowchart shown to the right shows the operation flow
regarding short‐circuit detection by VLA542, which is a
representative model that contains this system. The upper time
chart presented below shows the relationship between the
VLA542 input signals and gate output.
The lower time chart shows an operation example of a system
which is reset through pule‐by‐pulse.
As shown in the upper time chart, on the latch/timer system, thelatch status is resulted after activation of the protection circuitand shutdown of the gate output. Therefore, during this period,
gate output is not made no matter how much input signals arereceived. For this reason, it is possible to safely stop the entire
equipment by sending error signals to the microcomputer during
this period to stop gate signals.
However, for the pulse‐by‐pulse system shown in the lower time
chart, resetting is made when the gate signal is OFF even after
the gate output is decreased for protection. Thus, when the nextgate signal is received, gate output is made and short‐circuit may
be induced again. Therefore, it is necessary to stop gate signals
by informing the microcomputer of an error at very high speed.
For the reason above, the latch/timer reset signal eases
protection operations which are not tight on time.

Short‐Circuit Protection Circuit Operation Flow
(Example of a representative model, VLA542‐01R)
Start
Detection of short‐circuit
statusGate output shutdown
Timer operation start
Alarm output

Timer
1 to 2ms

Timer end

Is the input signal
OFF?

The alarm is cleared.
Gate output is possible.

The latch status iscanceled.

Latch/Timer Reset Method (Mainstream of ISAHAYA ELECTRONICS IGBT drivers)
Input Gate Signal
The gate shutdown status is kept until the timer time
elapses, irrespective of input gate signals. The
microcomputer is allowed to stop signals well in advance.
Gate Output

Ordinary Pulse‐by‐Pulse Reset Method
Input Gate Signal

Gate Output
The gate is turned on for each gate signal input, and thus short‐circuit is repeated, resulting in IGBT damage unless the short‐circuit status is canceled.
For this system, input signals must be stopped before the next gate
rise.
Note: Some of our products have employed the pulse‐by‐pulse method as exceptions: check with thefunction block diagrams in the data sheets. For products with the latch/timer reset method, a latch circuit
and a detection circuit are used as a suite.

8Collector Clamp Circuit Operations
In recent years, collector clamp built‐in units for driving large‐capacity IGBT modules have been developed. This section describes
the operations of the collector clamp circuit that is built in the VLA553, which is a representative model.
The figure below shows operation waveforms of the gate voltage and collector voltage which are generated when the IGBT isturned off.
The collector voltage portion which jumps from the main‐power supply voltage attributes to the stray inductance of the main
circuit. As the current value becomes larger when the IGBT is turned off, the degree of the jump becomes larger.
If the maximum voltage at that time is beyond the maximum rating of the collector voltage, the IGBT is damaged.
The collector clamp circuit aims to suppress this jump of the collector voltage.

Ls x di/dt
VDC_Link
VCE

This voltage must not exceed the specification of the VCES of the IGBT.

VGE
The portion circled with the dotted line is a collector clamp circuit.
When the IGBT is turned off, the collector voltage increases due to the effect of the stray inductance. When the collector voltage
exceeds this zener voltage, zener current flow starts and the current is divided into the one which flows to the gate directly andthe one which flows to the buffer section, eventually resulting in increase of the IGBT gate voltage.
The increase of the gate voltage suppresses the off‐speed of the collector current, resulting in suppression of the di/dt and thus
suppression of the collector voltage.

Ls

Integrative stray inductance of the main wiring

VDC_Link

Iz

IC

Collector clamp circuit

Inter
face

Gate voltage increase

VLA553 collector clamp circuit function block diagram

VCE

The maximum VCE value is suppressed by the collector clamp circuit.

VDC_LinkIC

The di/dt is suppressed by the work of the collector clamp circuit.

VGE

9Gate Power Supply
In this document, gate power supply refers to a power supply for an IGBT gate drive circuit.
This gate power supply needs isolation‐type +15V and ‐10V power supplies.
Basically, one gate power supply needs a suite of positive and negative power supplies.
Regarding the input‐output isolation voltage of the gate power supply, it is recommended to choose theone which is not lower than the isolation voltage of the package of the IGBT module.

IGBT module+15V

Isolation‐type power supply(Gate power supply)P

IGBT driver

‐10V
+15V

U or V or W
IGBT driver

N

‐10V

In a case where an isolation‐type power supply is chosen as a gate power supply, try to choose the one having small
capacitance input to output . If capacitance input to output is large, switching noise of the IGBT is easily sent to the
input side, possibly resulting in malfunction of the control circuit of the equipment. For ISAHAYA ELECTRONICS VLA106
series power supplies for example, the capacitance input to output is 35pF (approx.) or less and has long been used for
IGBT switching without any problems.
The figure below is the function block diagram of an isolation‐type DC/DC converter which employs the flyback
method. Some power supplies which are commercially available contain coupling capacitors between the primary andsecondary sides as shown in the figure. For the reasons mentioned above, using this type is not recommended.

Transformer

FilterConstant
voltagecircuitBase drive
circuitOvercurrent
protection circuit

Coupling capacitor

VCC

GND

Opto‐coupler

It is not recommended as a gate power supply to use the type which contains a coupling capacitor
between the primary and secondary sides.

10Selection of Output Current Capacity of Gate Power Supply
As the output current capacity of the gate power supply, choose the one which allows supply of current which is obtained withthe calculation below:
Io = (ldrive + lcc) x (1 + M)
lo: Output current capacity of the gate power supply
ldrive = Gate average current
lcc: Constant current consumption of the IGBT driver (Read from the characteristic diagram regarding the current consumption
vs. power supply voltage characteristics in the data sheet.)
M: Margin (0.2 to 0.5)
ldrive = (Q1 + lQ2l) x f
Q1: Gate charge at the time of positive bias (Read from the characteristic diagram regarding the gate charge in the IGBT data
sheet.)
Q2: Gate charge at the time of negative bias (Read from the characteristic diagram regarding the gate charge in the IGBT data
sheet.)
f: Switching frequency
For ISAHAYA ELECTRONICS gate drivers which contain gate power supplies, calculate gate average current (ldrive) with theformula below. In the data sheets of the gate drivers having built‐in gate power supplies, the maximum value of the gate average
current has been specified.
ldrive = (Q1 + lQ2l) x f
Q1: Gate charge at the time of positive bias (Read from the characteristic diagram regarding the gate charge in the IGBT data
sheet.)
Q2: Gate charge at the time of negative bias (Read from the characteristic diagram regarding the gate charge in the IGBT data
sheet.)
f: Switching frequency
IGBT Gate Charge vs. Gate Voltage Characteristics
VGE
(V)
15V

Gate charge

Q2

Negative bias
voltage
Q1

Derating by Power Consumption or Gate Average Current
The gate driver needs derating by power consumption or gate average current.
Regarding ISAHAYA ELECTRONICS products, derating has been specified with power consumption (for products which do not containgate power supplies) or gate average current (for products which contain gate power supplies). The data sheets of the productspresent characteristic diagrams which show power consumption vs. ambient temperature characteristics or ldrive vs.Ta
characteristics. The following calculation results, which depend on use conditions, have to be within the derating curve.
Power consumption of a product not having a built‐in gate power supply can be calculated with the formula below:
Pd = (VCC + lVEEl) x (ldrive + lcc)
VCC: Positive bias power supply voltage of gate
VEE: Negative bias power supply voltage of gate
ldrive: Gate average current
lcc: Constant current consumption of the IGBT driver (Read from the characteristic diagram regarding the current consumption vs.
power supply voltage characteristics in the data sheet.)ldrive = (Q1 + lQ2l) x f
Q1: Gate charge at the time of positive bias (Read from the characteristic diagram regarding the gate charge in the IGBT data sheet.)
Q2: Gate charge at the time of negative bias (Read from the characteristic diagram regarding the gate charge in the IGBT data
sheet.)
f: Switching frequency
The gate average current of a product having a built‐in gate power supply can be calculated with the formula below:
ldrive = (Q1 + lQ2l) x f
Q1: Gate charge at the time of positive bias (Read from the characteristic diagram regarding the gate charge in the IGBT data sheet.)
Q2: Gate charge at the time of negative bias (Read from the characteristic diagram regarding the gate charge in the IGBT data
sheet.)
f: Switching frequency

11

Gate ResistanceFor the gate resistance, choose the one which allows the power value which is calculated with the formula below:
Pd = ldrive (VCC + lVEEl )Pd: Gate resistance tolerance loss
ldrive: Gate average current
VCC: Positive bias power supply voltage of gate
VEE: Negative bias power supply voltage of gateCalculate gate average current ldrive with the formula below:
ldrive = (Q1 + lQ2l) x f
Q1: Gate charge at the time of positive bias (Read from the IGBT data sheet.)
Q2: Gate charge at the time of negative bias (Read from the IGBT data sheet.)
f: Switching frequency
The gate resistance value is to be determined, based on the value presented in the data sheet of the IGTB to be used.
Generally, as the resistance value is made smaller, the switching noise of the IGBT and the surge voltage of thecollector become larger: however, the switching loss in the element decreases. As the resistance value is made larger,
the switching noise and the collector surge voltage become smaller: however, the switching loss in the element
increases.
Generally, a resistance value larger than the minimum value indicated by the manufacturer is chosen to suppress theswitching noise and collector surge voltage.
Regarding the gate driver, the minimum value of the gate resistance has been indicated in the electric characteristics
columns on the data sheets. Choose a value which is larger than the indicated one.
The peak gate current can be calculated with the formula below:

Igpeak =VCC + lVEEl( RG + RG_in + α )Igpeak Peak gate current
VCC  Positive bias power supply voltage
VEE Negative bias power supply voltage
RG
External‐gate resistance value
RG_in Gate resistance value in the IGBT moduleαFactors such as gate, emitter wiring inductance, and gate driver output Tr switching delay

RG_in differs depending on the IGBT module model and may not be indicated in the data sheet of the IGBT.
It is difficult to calculate  accurately, and thus the formula below can be used for approximate calculation.

Igpeak =VCC + lVEEl
RG

× A*A: 0.4 to 0.8

Eventually, it is necessary to check with an actual product that the peak value of the gate current does not exceed the
maximum rating of the output peak current of the driver

12

Gate Driver Selection Guide

When choosing an ISAHAYA ELECTRONICS IGBT driver model, determine the following items first.
‐ Isolation Voltage
Determine based on the isolation voltage of the package of the IGBT module to be used.
‐ Output peak current
Choose so that the peak value of the gate current of the IGBT module does not exceed the maximum rating of theoutput peak current of the gate driver.
The peak gate current can be calculated with the formula below:
Igpeak =VCC + lVEEl( RG + RG_in + α )Igpeak Peak gate current
VCC Positive bias power supply voltage
VEE Negative bias power supply voltage
RG
External‐gate resistance value
RG_in Gate resistance value in the IGBT moduleαFactors such as gate, emitter wiring inductance, and gate driver output Tr switching delay
RG_in differs depending on the IGBT module model and may not be indicated in the data sheet of the IGBT.
It is difficult to calculate α accurately, and thus the formula below can be used for approximate calculation.

Igpeak =VCC + lVEEl
RG

× A*A: 0.4 to 0.8

Eventually, it is necessary to check with an actual product. If the maximum rating of the output peak current of
the driver is exceeded, it is necessary to lower the external‐gate resistance value or change the gate driver tothe one whose output current is one‐level higher.
By choosing a driver whose output peak current value is larger than required, higher flexibility is allowed forexternal‐gate resistance value selection.
‐ Short‐circuit protection circuit built‐in/not built‐in
The ISAHAYA ELECTRONICS IGBT drivers with some exceptions contain short‐circuit protection circuits. Some
IGBTs have not been warranted by their manufacturers. Those products may be damaged when short‐circuit
occurs, even if a short‐circuit protection circuit is used: you may use a driver which does not contain a short‐circuit protection circuit or deactivate the protection function of a driver which contains a short‐circuit protection
circuit. For the method for deactivating the protection function, see “Method for deactivating the short‐circuit
protection circuit” described later.
‐ Gate power supply built‐in/not built‐in
Determine which is to be chosen between a product that contains a gate power supply and a product that does
not contain it. Choosing a product that contains a gate power supply releases you from the burden of power
supply design and also eases circuit board design. If intending to design a power supply on your own, choose aproduct which does not contain a power supply.
‐ Soft shutdown speed adjustment at the time of short‐circuit protection activation
The products which contain short‐circuit protection circuits are originally equipped with a soft shutdown function.
Products equipped with a function which decreases the speed further are also available. This function is effective
to suppress collector surge voltage which becomes especially large when short‐circuit current is shut down in alarge‐capacity IGBT (1000A class or higher).
‐ Number of built‐in drive circuits
While most of the products contain a single gate drive circuit, some products contain two gate drive circuits.

From the product list on the next page, choose an appropriate model, based on the specifications and functions
determined above.

13

IGBT Driver Product List“Yes” in the table designates that the model supports the relevant item.
Built‐in Gate Power
Short‐Circuit
SupplyProtection(Maximum gate average
Circuitcurrent per circuit)

Soft Shutdown Speed
Adjustment at the Timeof Short‐CircuitProtection Activation

Number of
Built‐in Drive
Circuits

‐
‐
‐
‐
‐
‐

‐
‐
‐
‐
‐
Yes

1
1
1
1
1
1

Yes

‐

‐

1

2.5

Yes

‐

‐

1

2500

3

Yes

‐

‐

1

VLA542

2500

5

Yes

‐

‐

1

VLA546

4000

5

Yes

‐

Yes

1

VLA551
VLA551K
VLA567
VLA500

2500
4000
2500
2500

5
5
8
12

Yes
Yes
Yes
Yes

Yes（100mA)
Yes(100mA)
Yes(100mA)
Yes(210mA)

Yes
Yes
Yes
Yes

1
1
2
1

VLA502

2500

12

Yes

Yes(210mA)

Yes

1

VLA500K
VLA552

4000
4000

12
24

Yes
Yes

Yes(210mA)
Yes(210mA)

Yes
Yes

1
1

VLA554

4000

24

Yes

Yes(210mA)

Yes

1

Type Name

Isolation
Voltage(Vrms)

OutputPeak
Current(A)

VLA507
VLA513
M57159L
M57959AL
M57962AL
M57962CL

2500
2500
2500
2500
2500
2500

3
5
1.5
2
5
5

‐
‐
Yes
Yes
Yes
Yes

VLA5202500

5VLA531

2500

VLA541

Notes

Built‐in opto‐coupler
for alarm
Protection circuit
pulse‐by‐pulse reset
Compatible with
M57959AL
Compatible with
M57962AL
Compatible with
M57962CL

High‐speed model of
VLA500For fiber optic
interface* Products whose type names start with M5 began to be sold many years ago. While stop of their production is notscheduled as of August 2014, it is recommended to choose products whose type names start with VLA.
For some of the products listed in the table above, circuit boards for evaluation are available. See the table below for the utilization.
All of the listed products contain a gate power supply.
IGBT‐Non‐Mountable Drive Unit Product List
Isolation Isolation Short‐Circuit
Voltage Voltage Protection
Circuit(Vrms)(Vrms)

Type Name“Yes” in the table designates that the model supports the relevant item.
Maximum Gate
Average Current per
Circuit

Soft Shutdown Speed Adjustment Number ofat the Time of Short‐Circuit
Built‐in Drive
Protection Activation
Circuits

Built‐in HIC

GAU205S‐15252

2500

5

‐

90mA

‐

2

VLA513/VLA106

GAU205P‐15252A

2500

5

Yes

85mA

‐

2

VLA542/VLA106

GAU208P‐15252

2500

8

Yes

100mA

Yes

2

VLA567

GAU205P‐15402

4000

5

Yes

100mA

Yes

2

VLA551K

GAU212S‐15255

2500

12

‐

210mA

‐

2

VLA502GAU212P‐15255

2500

12

Yes

210mA

Yes

2

VLA500GAU405P‐15252

2500

5

Yes

100mA

Yes

4

VLA551GAU605P‐15252

2500

5

Yes

100mA

Yes

6

VLA551*VLA106 in the Built‐in HIC column in the table is an HIC for gate power supply
ISAHAYA ELECTRONICS has commercialized HIC‐centered built‐in type drive units, for specific IGBT modules. Be careful thatthese units support only certain IGBT modules.
IGBT‐Mountable Drive Unit Product List
Type Name
VLA536‐01R

Isolation Output
Short‐Circuit
Voltage
Peak
Protection(Vrms) Current (A)Circuit
2500

5

Yes

“Yes” in the table designates that the model supports the relevant item.
Maximum Gate
Number of Built‐
Average Current per
in Drive Circuits
Circuit

Built‐in HIC

Supporting IGBT

83mA

2

VLA520/VLA106

Mitsubishi NX 2in1
EconoDual

VLA553‐01R

4000

24

Yes

210mA

2

VLA552

CM2500DY‐24S

VLA553‐02R

4000

24

Yes

210mA

2

VLA552

CM1800DY‐34S
CM2500DY‐24S

VLA555‐01R

4000

24

Yes

210mA

2

VLA552

VLA555‐02R

4000

24

Yes

210mA

2

VLA552

CM1800DY‐34S

VLA559‐01R

4000

24

Yes

210mA

2

VLA552

PrimePack 1200V series

VLA559‐02R

4000

24

Yes

210mA

2

VLA552

PrimePack 1700V series

14Input Gate Signal Drive Circuit
For most of the ISAHAYA ELECTRONICS IGBT drivers, the gate signal input section is equipped with an opto‐coupler for the
purpose of electrical isolation between the input and output sides: this can be identified with the function blocks in the
product data sheets.
When the input LED is turned on, the gate output is turned on. For a drive circuit which causes this ON current to flow, theinternal resistance is set so that appropriate amount of current flows when directly driven by a CMOS‐type IC, at 5V pull‐up
power supply voltage. Therefore, an external limiting resistor is not needed to drive with a 5V circuit. If it is absolutely
necessary to drive with a 15V circuit, an external limiting resistor needs to be attached as shown in the diagram below.
The function block diagrams on the data sheets of the individual products show limiting resistance values of the internal LED
current. Set an external resistance value so that the LED current falls in the range recommended as an electrical characteristic
in the data sheets.
As an IC which drives LED current, it is not recommended to use the one whose output is open collector or open drain type:on these types, the terminal voltage becomes unstable when the status is OFF. Use a totem‐pole output type having CMOS
output, such as HC04.
Regarding gate signal wiring pattern, make the area surrounded by wiring as small as possible to minimize the effect ofelectromagnetic induction noise: this is also true of wiring from the CPU to the drive IC.

Representative HIC: VLA542/VLA541/VLA567

Case where pull‐up line voltage VIN = 5V

Vf ：1.5V

VCC

VIN : 5V
HC04 etc.

1k Ω

VIN

PC

Detection
Latch

Gate signal fromthe CPUInterface(Note)

IN1

Gate shutdown
F.O.

240 Ω

IF:12~13mA

Vo

Timer

VEE

VoL: Approx. 0.5V
(HC04)

Representative HIC: VLA542/VLA541/VLA567
Case where pull‐up line voltage VIN = 15V
Vf ：1.5V

VIN : 15V

Totem‐pole output type IC
M81711FP, MAX626 etc.
Gate signal fromthe CPU


VCC
Rout

VIN

1k Ω

PC

Detection
Latch(Note)
IF:12~13mAInterface

IN1

Vo

Timer
240 Ω

Gate shutdown
F.O.

VEE

IF = (15‐1.5‐VoL) / (240 + Rout )* Adjust the Rout so that the LED current is 12 to 13mA.

Note: Design the wiring pattern so that the area surrounded by the input signal line becomes as small as
possible to minimize the effect of electromagnetic induction noise.

15

Wiring for Gate, Emitter and Power Supply
Regarding IGBT gate and emitter wiring, minimize the effect of electromagnetic induction noise by, for example, connecting bymeans of twisted pair wires. Design the wiring pattern so that the area surrounded by the gate driver power supply wiring
becomes as small as possible. Especially make every effort to place power supply voltage compensation capacitors very close to
the VCC and VEE terminals of the gate driver.

VCC

Gate driver

Twisted pair wires

VEE

Power supply voltage compensation capacitor

Method for Deactivating Short‐Circuit Protection Circuit
Most of the ISAHAYA ELECTRONICS IGBT drivers contain a short‐circuit protection circuit. The protection circuit can bedeactivated with the following method in a case where it need not be used because of initial evaluation or for design
convenience.
As shown in the diagram below, connect the detection terminal to the GND level of the gate power supply via a 4.7kΩ resistor. At
this time, FRD for connection from the detection terminal to the IGBT collector and protection zener diode are not needed.
Moreover, the alarm output terminal can be made open.
Short‐circuit protection circuit

Vcc

Detection terminal

4
Latch
14

Detection
circuit

1
4.7kΩ
1/4W

Timer andreset
circuits
Interface andamplifierOpto‐coupler
13

5
Gate
shutdown
circuitVo

RG

8Alarm output terminal
6

VEE

Example of VLA542‐01R (representative model)

16