S-85S0A Series
5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN
SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT

www.ablic.com
www.ablicinc.com

Rev.1.2_00© ABLIC Inc., 2017-2018

The S-85S0A Series introduces own distinctive low power consumption control and COT (Constant On-Time) control,features ultra low current consumption (260 nA quiescent current) and fast transient response, operates at PFM control.
The S-85S0A Series realizes high efficiency in a wide range of load current consumption and provides strong support forextended period operation of mobile devices and wearable devices which are equipped with compact batteries.
The S-85S0A Series can configure a step-down regulator only with a coil, an input capacitor, and an output capacitor. By
using external parts recommended in this datasheet, the occupancy area can be reduced to 1.6 mm × 4.3 mm = 6.9 mm2,
and it contributes to miniaturization of electronic equipment.

 Features

 Applications• Ultra low current consumption:• Efficiency (when under 100 μA load):• Fast transient response:• Input voltage:• Output voltage:• Wearable device• Bluetooth device• Wireless sensor network device• Healthcare equipment• Smart meter• Portable game device

260 nA quiescent current
90.5%
COT control
2.2 V to 5.5 V
0.7 V to 2.5 V, in 0.05 V step
2.6 V to 3.9 V, in 0.1 V step• Output voltage accuracy:±1.5% (1.0 V ≤ VOUT ≤ 3.9 V)±15 mV (0.7 V ≤ VOUT < 1.0 V)• High side power MOS FET on-resistance:
420 mΩ
• Low side power MOS FET on-resistance:
320 mΩ
• Soft-start function:
1 ms typ.
• Under voltage lockout function (UVLO):
1.8 V typ. (detection voltage)
135°C typ. (detection temperature)• Thermal shutdown function:• Overcurrent protection function:
300 mA (at L = 2.2 μH)• Automatic recovery type short-circuit protection function:Hiccup control• Input and output capacitors:
Ceramic capacitor compatible• Operation temperature range:
Ta = −40°C to +85°C• Lead-free (Sn 100%), halogen-free Typical Application Circuit

CIN
4.7 F

VIN

SW

PVSS

VOUT

EN

VOUT(S) = 1.8 V
100

VOUT
COUT
4.7 F80

VIN = 2.5 V

60

VIN = 3.6 V

40

VIN = 4.2 V

20VSS• SNT-6A(1.80 mm × 1.57 mm × t0.5 mm max.) Efficiency

 [%]

VIN

L
2.2 H Package

0
0.01

0.1

1
IOUT [mA]

10

100

1

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
 Block Diagram

CIN

VIN

VIN

VOUT

Error amplifier−
ON time generation++
circuitOutput control circuit− UVP circuit+

Reference voltage circuit
EN

Enablecircuit

Soft-start cicuit

SW

Reverse current
detection circuit+−

Thermal shutdown circuit
Overcurrent protection circuit

UVLO circuit

VSS
Figure 1

2

L

PVSS

VOUT

COUT

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
 Product Name Structure
Users can select output voltage for the S-85S0A Series. Refer to "1. Product name" regarding the contents ofproduct name, "2. Package" regarding the package, "3. Product name list" regarding details of the product
name.

1.

Product name
S-85S0A B

xx

-

I6T1

U
Environmental codeU:
Lead-free (Sn 100%), halogen-free*1

Package name abbreviation and packing specification
I6T1: SNT-6A, Tape*2, *3

Output voltage
07 to 39(e.g., when the output voltage is 0.7 V, it is expressed as 07.)

*1.
*2.
*3.

2.

Refer to the tape drawing.
Refer to "3. Product name list".
In the range from 0.7 V to 2.5 V, the products which have 0.05 V step are also available.
Contact our sales office when the product is necessary.

Package
Table 1
Package Name
SNT-6A

Package Drawing Codes

Dimension

Tape

Reel

Land

PG006-A-P-SD

PG006-A-C-SD

PG006-A-R-SD

PG006-A-L-SD

3

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
3.

Product name list
Table 2
Output Voltage (VOUT)
0.7 V ± 15 mV
0.8 V ± 15 mV
0.9 V ± 15 mV
1.0 V ± 1.5%
1.1 V ± 1.5%
1.2 V ± 1.5%
1.3 V ± 1.5%
1.4 V ± 1.5%
1.5 V ± 1.5%
1.6 V ± 1.5%
1.7 V ± 1.5%
1.8 V ± 1.5%
1.9 V ± 1.5%
2.0 V ± 1.5%
2.1 V ± 1.5%
2.2 V ± 1.5%
2.3 V ± 1.5%
2.4 V ± 1.5%
2.5 V ± 1.5%
2.6 V ± 1.5%
2.7 V ± 1.5%
2.8 V ± 1.5%
2.9 V ± 1.5%
3.0 V ± 1.5%
3.1 V ± 1.5%
3.2 V ± 1.5%
3.3 V ± 1.5%
3.4 V ± 1.5%
3.5 V ± 1.5%
3.6 V ± 1.5%
3.7 V ± 1.5%
3.8 V ± 1.5%
3.9 V ± 1.5%
Remark4

S-85S0A Series
S-85S0AB07-I6T1U
S-85S0AB08-I6T1U
S-85S0AB09-I6T1U
S-85S0AB10-I6T1U
S-85S0AB11-I6T1U
S-85S0AB12-I6T1U
S-85S0AB13-I6T1U
S-85S0AB14-I6T1U
S-85S0AB15-I6T1U
S-85S0AB16-I6T1U
S-85S0AB17-I6T1U
S-85S0AB18-I6T1U
S-85S0AB19-I6T1U
S-85S0AB20-I6T1U
S-85S0AB21-I6T1U
S-85S0AB22-I6T1U
S-85S0AB23-I6T1U
S-85S0AB24-I6T1U
S-85S0AB25-I6T1U
S-85S0AB26-I6T1U
S-85S0AB27-I6T1U
S-85S0AB28-I6T1U
S-85S0AB29-I6T1U
S-85S0AB30-I6T1U
S-85S0AB31-I6T1U
S-85S0AB32-I6T1U
S-85S0AB33-I6T1U
S-85S0AB34-I6T1U
S-85S0AB35-I6T1U
S-85S0AB36-I6T1U
S-85S0AB37-I6T1U
S-85S0AB38-I6T1U
S-85S0AB39-I6T1U

Please contact our sales office for products with specifications other than the above.

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
 Pin Configuration
1.

SNT-6A
Table 3Top view
1
2
3

Pin No.
6
5
4

Figure 2

Symbol

1
2
3
4
5

VOUT
VSS
SW
PVSS
VIN

6

EN

Description
Voltage output pin
GND pin
External inductor connection pin
Power GND pin
Power supply pin
Enable pin"H": Enable (normal operation)"L": Disable (standby)5

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
 Absolute Maximum Ratings
Table 4
(Unless otherwise specified: Ta = +25°C, VSS = 0 V)
Item
VIN pin voltage
EN pin voltage
VOUT pin voltage
SW pin voltage
PVSS pin voltage
Operation temperature
Storage temperature

Symbol
VIN
VEN
VOUT
VSW
VPVSS
Topr
Tstg

Absolute Maximum Rating

Unit

VSS − 0.3 to VSS + 6.0
VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0
VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0
VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0
VSS − 0.3 to VSS + 0.3 ≤ VSS + 6.0−40 to +85−40 to +125

V
V
V
V
V
°C
°C

Caution The absolute maximum ratings are rated values exceeding which the product could suffer physicaldamage. These values must therefore not be exceeded under any conditions.

 Thermal Resistance Value
Table 5
Item

SymbolCondition
Board A
Board B
Junction-to-ambient thermal resistance*1 θJA
SNT-6A
Board C
Board D
Board E
*1. Test environment: compliance with JEDEC STANDARD JESD51-2A
Remark Refer to " Power Dissipation" and "Test Board" for details.

6

Min.
−
−
−
−
−

Typ.
224
176
−
−
−

Max.
−
−
−
−
−

Unit
°C/W
°C/W
°C/W
°C/W
°C/W

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series Electrical Characteristics
Table 6
(VIN = 3.6 V*1, Ta = +25°C unless otherwise specified)
Item
Operating input voltage
Output voltage*2

SymbolVIN

Condition

Min.

Typ.

Max.

Unit

−

2.2
VOUT(S)× 0.985
VOUT(S)− 0.015

3.6

5.5
VOUT(S)× 1.015
VOUT(S)+ 0.015

V

1.0 V ≤ VOUT ≤ 3.9 V, no external parts
VOUT
0.7 V ≤ VOUT <1.0 V, no external parts

Current consumption
during shutdown

ISSS

Current consumption
during switching off

ISS1

VEN = 0 V

VOUT(S)
VOUT(S)

V
V

−

1

100

nA

−

260

500

nA

1.1
−
−100
−100

−
−
−
−

−
0.3
100
100

V
V
nA
nA

High level input voltage
Low level input voltage
High level input current
Low level input current
High side power
MOS FET on-resistanceLow side power
MOS FET on-resistanceHigh side power
MOS FET leakage current
Low side power
MOS FET leakage current
Current limit*3

VSH
VSL
ISH
ISL

VOUT = VOUT(S) + 0.1 V, VEN = VIN,
no external parts,
no switching operation
VIN = 2.2 V to 5.5 V, EN pin
VIN = 2.2 V to 5.5 V, EN pin
VIN = 2.2 V to 5.5 V, EN pin, VEN = VIN
VIN = 2.2 V to 5.5 V, EN pin, VEN = 0 V

RHFET

ISW = 100 mA

−

420

−

mΩ

RLFET

ISW = −100 mA

−

320

−

mΩ

IHSW

VIN = 2.2 V to 5.5 V, VEN = 0 V, VSW = 0 V

−

1

100

nA

ILSW

VIN = 2.2 V to 5.5V, VEN = 0 V, VSW = VIN

−100

1

−

nA

ILIM

−

300

−

mA

ON time*4tON

tON(S)/1.3

tON(S)tON(S)/0.7

ns

Minimum OFF timeUVLO detection voltage
UVLO release voltagetOFF(MIN)VUVLO−VUVLO+

L = 2.2 μH
tON(S) = 1 μs × VOUT/VIN,
VOUT = VOUT(S) × 0.9−
When VIN falls
When VIN rises

−
1.7
1.9

−
1.9
2.1

ns
V
V

UVP detection voltage

VUVP

−

V

Soft-start wait time

tSSW

−

ms

Soft-start timetSS

Thermal shutdown
detection temperature
Thermal shutdown
release temperature

Time until VOUT starts rising
Time until VOUT reaches 90% after it
starts rising

−

100
1.8
2.0
VOUT(S)
× 0.7
1.5

−

1.0

−

ms

TSD

Junction temperature

−

135

−

°C

TSR

Junction temperature

−

115

−

°C

−

−

*1. VIN = VOUT(S) + 1.0 V (VOUT(S) ≥ 2.6 V)*2. VOUT: Actual output voltage
VOUT(S): Set output voltage*3. The current limit changes according to the L value for the inductor to be used, input voltage, and output voltage.
Refer to " Operation" for details.
*4. tON: Actual ON timetON(S): Set ON time7

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
 Operation
1.

Fast transient response
Distinctive COT (Constant On-Time) control is used for DC-DC converter control.
The S-85S0A Series monitors the output voltage (VOUT) using a comparator and if VOUT falls below the targetedvalue, the high side power MOS FET will turn on for a certain amount of time. Since the high side power MOS FETturns on and VOUT rises immediately after the load current fluctuates rapidly and VOUT falls, the fast transient
response is realized.
The S-85S0A Series outputs ON time in proportion to VOUT and in inverse proportion to power supply voltage.

2.

PFM control (pulse frequency modulation method)
The S-85S0A Series operates at PFM control and skip the pulse according to the load current. This reduces
switching loss and improves efficiency.
The S-85S0A Series has a built-in reverse current detection circuit. The reverse current detection circuit monitors
the current flowing through the inductor. If the bottom of ripple current in the inductor falls to 0 mA, the high side
power MOS FET and low side power MOS FET will turn off and switching operation will stop. Switching frequency(fSW ) will fall by skipping a pulse. This means that the smaller IOUT is, the more the switching frequency will drop, andit reduces switching loss.
If the power supply voltage decreases and then the potential difference between input and output becomes smaller,
the S-85S0A Series will stop skipping the pulse.

3.

Ultra low current consumption
When in discontinuous mode, the S-85S0A Series reduces current consumption to 260 nA typ. by intermittently
operating a control circuit and a protection circuit. If switching operation stops and a certain amount of time elapses
after the high side power MOS FET and low side power MOS FET turn off, only the necessary circuits will operate.
Under voltage lockout function (UVLO), thermal shutdown function, current limit function, and automatic recovery
type short-circuit protection function are prepared in the S-85S0A Series, and each protection function will carry out
detection operation for a certain amount of time from when the high side power MOS FET turns on. It is thus able torealize ultra low current consumption.

4.

EN pinThis pin starts and stops switching operation. When the EN pin is set to "L", the operation of all internal circuits,
including the high side power MOS FET, is stopped, reducing current consumption. Current consumption increases
when a voltage of 0.3 V to VIN − 0.3 V is applied to the EN pin. When not using the EN pin, connect it to the VIN pin.
Since the EN pin is neither pulled down nor pulled up internally, do not use it in the floating status. The structure of
the EN pin is shown in Figure 3.
Table 7
Internal Circuit
VOUT Pin Voltage
VOUT*1"H"
Enable (normal operation)"L"
Disable (standby)"High-Z"*1. Refer to *2 in Table 6 in " Electrical Characteristics".
EN Pin

VIN

EN

VSS

Figure 38

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
5.

Under voltage lockout function (UVLO)The S-85S0A Series has a built-in UVLO circuit to prevent the IC from malfunctioning due to a transient status at
power-on or a momentary drop in the supply voltage. When UVLO status is detected, the high side power MOS FET
and low side power MOS FET will turn off, and the SW pin will change to "High-Z". For this reason, switching
operation will stop. The soft-start function is reset if UVLO status is detected once, and is restarted by releasing the
UVLO status.
Note that the other internal circuits operate normally and the status is different from the disabled status.
Also, there is a hysteresis width for avoiding malfunctions due to generation of noise etc. in the input voltage.

6.

Thermal shutdown function
The S-85S0A Series has a built-in thermal shutdown circuit to limit overheating. When the junction temperature
increases to 135°C typ., the thermal shutdown circuit becomes the detection status, and the switching operation is
stopped. When the junction temperature decreases to 115°C typ., the thermal shutdown circuit becomes the releasestatus, and the switching operation is restarted.
If the thermal shutdown circuit becomes the detection status due to self-heating, the switching operation is stopped
and output voltage (VOUT) decreases. For this reason, the self-heating is limited and the temperature of the IC
decreases. The thermal shutdown circuit becomes release status when the temperature of the IC decreases, andthe switching operation is restarted, thus the self-heating is generated again. Repeating this procedure makes the
waveform of VOUT into a pulse-like form. Switching operation stopping and starting can be stopped by either setting
the EN pin to "L", lowering the output current (IOUT) to reduce internal power consumption, or decreasing the ambient
temperature.
Table 8
Thermal Shutdown Circuit
Release: 115°C typ.*1
Detection: 135°C typ.*1*1. Junction temperature

7.

VOUT Pin Voltage
VOUT"High-Z"

Overcurrent protection function
The S-85S0A Series has a built-in current limit circuit.
The overcurrent protection circuit monitors the current that flows through the low side power MOS FET and limits
current to prevent thermal destruction of the IC due to an overload, magnetic saturation in the inductor, etc.
When a current exceeding the current limit (ILIM) flows through the low side power MOS FET, the current limit circuit
operates and prohibits turning on the high side power MOS FET until the current falls below the low side current limit(ILIMDET). If the value of the current that flows through the low side power MOS FET falls to the ILIMDET or lower, theS-85S0A Series returns to normal operation. ILIMDET is fixed at 120 mA typ. in the IC, and ILIM will vary depending on
the external parts to be used.
The relation between ILIM, the inductor value (L), the input voltage (VIN), and the output voltage (VOUT) are shown in
the following expression.
ILIM = ILIMDET +1(VIN − VOUT) × VOUT×
VIN
2 × L × fSW

9

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
8.

Automatic recovery type short-circuit protection function (Hiccup control)
The S-85S0A Series has a built-in automatic recovery type short-circuit protection function for Hiccup control.
Hiccup control is a method for periodically carrying out automatic recovery when the IC detects overcurrent andstops the switching operation.
8. 1 When over load status is released<1> Overcurrent detection<2> Under voltage protection circuit (UVP circuit) detects a drop in the output voltage (VOUT).
<3> 220 μs elapse<4> Switching operation stop (for 9 ms typ.)<5> Overload status release<6> The IC restarts, soft-start function starts.
In this case, it is unnecessary to input an external reset signal for restart.
<7> VOUT reaches VOUT(S) after 1.0 ms typ. elapses.
<1>

Overload status<5>

Normal load status
ILIMDET = 120 mA typ.

*1

IL

IOUT = 50 mA max.
0A

VSW
0V
VOUT(S)VOUTVUVP typ.
0V

<3>
<7>
220 s
9.0 ms typ.
1.0 ms typ.
<2>
<4>
<6>

*1. Inductor current
Figure 4
8. 2 When over load status continues<1> Overcurrent detection<2> The UVP circuit detects a drop in VOUT.
<3> 220 μs elapse<4> Switching operation stop (for 9 ms typ.)<5> The IC restarts, soft-start function starts.
<6> The status returns to <2> when over load status continues after 1.25 ms typ. elapses.
<1>

Overload status
ILIMDET = 120 mA typ.

*1

IL

IOUT = 50 mA max.
0A

VSW
0V
VOUT(S)VOUTVUVP typ.
<3>
<6>
<3>
220 s
9.0 ms typ.
1.25 ms typ.
220 s
<2>
<4>
<5>
<2>
<4>

*1. Inductor current
Figure 5

100V
9.0 ms typ.

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
9.

Pre-bias compatible soft-start function
The S-85S0A Series has a built-in pre-bias compatible soft-start circuit.
If the pre-bias compatible soft-start circuit starts when electrical charge remains in the output voltage (VOUT) as aresult of power supply restart, etc., or when VOUT is biased beforehand (pre-bias status), switching operation is
stopped until the soft-start voltage exceeds the internal feedback voltage, and then VOUT is maintained. If thesoft-start voltage exceeds the internal feedback voltage, switching operation will restart and VOUT will rise to the
output voltage setting value (VOUT(S)). This allows VOUT(S) to be reached without lowering the pre-biased VOUT.
In soft-start circuits which are not pre-bias compatible, a large current flows as a result of the discharge of theresidual electric charge through the low side power MOS FET when switching operation starts, which could cause
damage, however in a pre-bias compatible soft-start circuit, the IC is protected from the large current when switching
operation starts, and it makes power supply design for the application circuit simpler.
In the S-85S0A Series, VOUT reaches VOUT(S) gradually due to the soft-start circuit.
In the following cases, rush current and VOUT overshoot are reduced.
• At power-on• When the EN pin changes from "L" to "H".
• When UVLO operation is released.
• When thermal shutdown is released.
• At short-circuit recovery
In addition, the soft-start circuit operates under the following conditions.
The soft-start circuit starts operating after "H" is input to the EN pin and the soft-start wait time (tSSW) = 1.5 ms typ.
elapses. The soft-start time (tSS) is set to 1.0 ms typ.
• At power supply restart (the IC restart)• At UVLO detection (after UVLO release)• At thermal shutdown detection (after thermal shutdown release)• After Hiccup control
Soft-start wait time
(tSSW)

Soft-start time(tSS)

Soft-start operation during pre-bias

VEN

VOUT

VSW

Figure 6115.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
 Typical Circuit

VIN
VOUT

Error amplifier
−
+
+

CIN
4.7 μFON time generation
circuitSS

Output control circuit− UVP circuit+

Reference voltage circuit

EN

Soft-start cicuit

SW

L

VIN

VOUT

2.2 μH
Reverse current
detection circuit
+
−

COUT
4.7 μF
PVSS

Thermal shutdown circuit
UVLO cicuit

Overcurrent protection circuit

VSS

Figure 7
Caution The above connection diagram and constants will not guarantee successful operation. Perform
thorough evaluation using an actual application to set the constants.

12

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
 External Parts Selection
Selectable values and recommended values for external parts are shown in Table 9.
Use ceramic capacitors for CIN and COUT.
Table 9Input Capacitor (CIN)
2.2 μF or larger
4.7 μF

Item
Selectable value
Recommended value

1.

Output Capacitor (COUT)
4.7 μF to 100 μF
4.7 μF

Inductor (L)
1.5 μH to 10 μH
2.2 μH

Input capacitor (CIN)
CIN can lower the power supply impedance, average the input current, improve the efficiency and noise tolerance.
Select a capacitor according to the impedance of the power supply to be used. Also take into consideration the DC
bias characteristics of the capacitor to be used.

2.

Output capacitor (COUT)
COUT is used to smooth output voltage. If the capacitance is large, the overshoot and undershoot during loadtransient and output ripple voltage can be improved even more. Select a proper capacitor after the sufficientevaluation under actual conditions.
Recommended Capacitors (CIN, COUT) List (at VOUT(S) ≤ 2.5 V)

Table 10
Manufacturer

Part Number

CapacitanceWithstanding
Voltage

Dimensions (L × W × H)

Murata Manufacturing Co., Ltd.
Murata Manufacturing Co., Ltd.
TDK Corporation

GRM035R60J475ME15
GRJ155R61A106ME12
C1005X5R0J106M050BC

4.7 μF
10 μF
10 μF

6.3 V
10 V
6.3 V

0.6 mm × 0.3 mm × 0.5 mm
1.0 mm × 0.5 mm × 0.5 mm
1.0 mm × 0.5 mm × 0.5 mm

Recommended Capacitors (CIN, COUT) List (at VOUT(S) > 2.5 V)

Table 11
Manufacturer

Part Number

CapacitanceWithstanding
Voltage

Dimensions (L × W × H)

Murata Manufacturing Co., Ltd.
TDK Corporation

GRJ155R61A106ME12
C1005X5R0J106M050BC

10 μF
10 μF

10 V
6.3 V

1.0 mm × 0.5 mm × 0.5 mm
1.0 mm × 0.5 mm × 0.5 mm

3.

Inductor (L)When selecting L, note the allowable current. If a current exceeding this allowable current flows through the inductor,
magnetic saturation may occur, and there may be risks which substantially lower efficiency and damage the IC as aresult of large current.
Therefore, select an inductor so that peak current value (IPK), even during overcurrent detection, does not exceed
the allowable current.
When prioritizing the load response, select an inductor with a small L value such as 2.2 μH. When prioritizing theefficiency, select an inductor with a large L value such as 4.7 μH. IPK is calculated using the following expression.
IPK = IOUT +1(VIN − VOUT) × VOUT×
VIN
2 × L × fSW
Recommended Inductors (L) List (at VIN ≤ 4.2 V)
Rated
Part Number
InductanceDimensions (L × W × H)
Current
MBKK1608T2R2M
520 mA
2.2 μH
1.6 mm × 0.8 mm × 1.0 mm
2000 mA 2.0 mm × 1.2 mm × 1.0 mm
DFE201210S-2R2M=P2
2.2 μH
74438313022
850 mA
2.2 μH
1.6 mm × 1.6 mm × 1.0 mm
MLP2012S2R2MT0S1
800 mA
2.2 μH
2.0 mm × 1.25 mm × 0.85 mm

Table 12Manufacturer
TAIYO YUDEN CO.,LTD.
Murata Manufacturing Co., Ltd.
Würth Elektronik GmbH & Co. KG
TDK Corporation

Recommended Inductors (L) List (at VIN > 4.2 V)
Rated
Part Number
InductanceDimensions (L × W × H)
Current
DFE201210S-2R2M=P2
2000 mA 2.0 mm × 1.2 mm × 1.0 mm
2.2 μH
74438313022
850 mA
2.2 μH
1.6 mm × 1.6 mm × 1.0 mm
MLP2012S2R2MT0S1
800 mA
2.2 μH
2.0 mm × 1.25 mm × 0.85 mm

Table 13
Manufacturer
Murata Manufacturing Co., Ltd.
Würth Elektronik GmbH & Co. KG
TDK Corporation

13

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series Board Layout Guidelines
Note the following cautions when determining the board layout for the S-85S0A Series.
• Place CIN as close to the VIN pin and the PVSS pin as possible.
• Make the VIN pattern and GND pattern as wide as possible.
• Place thermal vias in the GND pattern to ensure sufficient heat dissipation.
• Keep thermal vias near CIN and COUT approximately 3 mm to 4 mm away from capacitor pins.
• Large current flows through the SW pin. Make the wiring area of the pattern to be connected to the SW pin small tominimize parasitic capacitance and emission noise.
• Do not wire the SW pin pattern under the IC.

Total size

1.6 mm × 4.3 mm = 6.9 mm2

Figure 8

Reference Board Pattern

Caution The above pattern diagram does not guarantee successful operation. Perform thorough evaluation
using the actual application to determine the pattern.

Remark14

Refer to the land drawing of SNT-6A and "SNT Package User's Guide".

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
 Precautions•

Mount external capacitors and inductors as close as possible to the IC, and make single GND.

•

Characteristic ripple voltage and spike noise occur in the IC containing switching regulators. Moreover rush current
flows at the time of a power supply injection. Because these largely depend on the inductor, the capacitor and
impedance of power supply to be used, fully check them using an actually mounted model.

•

The 4.7 μF capacitor connected between the VIN pin and the VSS pin is a bypass capacitor. It stabilizes the power
supply in the IC, and thus effectively works for stable switching regulator operation. Allocate the bypass capacitor
as close to the IC as possible, prioritized over other parts.

•

Although the IC contains a static electricity protection circuit, static electricity or voltage that exceeds the limit of
the protection circuit should not be applied.

•

The power dissipation of the IC greatly varies depending on the size and material of the board to be connected.
Perform sufficient evaluation using an actual application before designing.

•

ABLIC Inc. assumes no responsibility for the way in which this IC is used on products created using this IC or forthe specifications of that product, nor does ABLIC Inc. assume any responsibility for any infringement of patents or
copyrights by products that include this IC either in Japan or in other countries.

15

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
 Characteristics (Typical Data)
Example of major power supply dependence characteristics (Ta = +25°C)

ISS1 [nA]

1. 1

Current consumption during switching off (ISS1)
vs. Input voltage (VIN)

1. 2

100

400

80

300
200
100

40

0
2.0

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

1. 3

Output voltage (VOUT) vs. Input voltage (VIN)
VOUT(S) = 1.2 V
1.230

2.0

1. 4

1.220

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

Output voltage (VOUT) vs. Input voltage (VIN)
VOUT(S) = 1.8 V
1.840
1.820

VOUT [V]

1.210
1.200
1.190

1.800
1.780

1.180
1.170

60

20

0

VOUT [V]

Current consumption during shutdown (ISSS)
vs. Input voltage (VIN)

500

ISSS [nA]

1.

1.760
2.0

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

2.0

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

1. 5

Output voltage (VOUT) vs. Input voltage (VIN)
VOUT(S) = 2.5 V
2.600

VOUT [V]

2.400
2.200
2.000
1.800
2.0

1. 6

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

ON time (tON) vs. Input voltage (VIN)
VOUT(S) = 1.8 V
1.0

1. 7

fSW [MHz]tON [s]

0.8
0.6
0.4
0.2

1.2
1.0
0.8
0.6

0.0
2.0

16

Switching frequency (fSW) vs. Input voltage (VIN)
VOUT(S) = 1.8 V
1.4

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

2.0

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series

Soft-start wait time (tSSW) vs. Input voltage (VIN)

1. 9

2.50

2.00

2.00

1.50
1.00
0.50
3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

2.0

800
700
600
500
400
300
200
100
0

RHFET [m]

RHFET [m]2.5High side power MOS FET on-resistance (RHFET) 1. 11
vs. Input voltage (VIN)

2.0

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

2.0

80

ILSW [nA]

80

20

4.5

5.0

5.5

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

60
40
20

0

0
2.0

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

1. 14 High level input voltage (VSH) vs. Input voltage (VIN)

2.0

1.0

1.0

0.8

0.8

VSL [V]

1.2

0.6
0.4
0.2

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

1. 15 Low level input voltage (VSL) vs. Input voltage (VIN)

1.2

0.0

3.5 4.0
VIN [V]

1. 13 Low side power MOS FET leakage current (ILSW)
vs. Input voltage (VIN)
100

40

3.0

800
700
600
500
400
300
200
100
0

100

60

2.5

Low side power MOS FET on-resistance (RLFET)
vs. Input voltage (VIN)

5.5

1. 12 High side power MOS FET leakage current (IHSW)
vs. Input voltage (VIN)

IHSW [nA]

1.00

0.00
2.0

1. 10

1.50

0.50

0.00

VSH [V]

Soft-start time (tSS) vs. Input voltage (VIN)

2.50

tSS [ms]tSSW [ms]

1. 8

0.6
0.4
0.2

2.0

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

0.0

2.0

2.5

3.0

3.5 4.0
VIN [V]

4.5

5.0

5.5

17

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series

2.

Example of major temperature characteristics (Ta = −40°C to +85°C)

2. 1

Current consumption during switching off (ISS1)
vs. Temperature (Ta)

2. 2

500

200
VDD = 5.5 V

VDD = 2.2 V

300
200

VDD = 3.6 V

100

2. 3

−40 −25150

ISSS [nA]

ISS1 [nA]4000Current consumption during shutdown (ISSS)
vs. Temperature (Ta)VDD = 2.2 V
100

25
Ta [C]50

75 85

Output voltage (VOUT) vs. Temperature (Ta)VDD = 5.5 V

50
0

0

VDD = 3.6 V

2. 4−40 −25025Ta [C]VOUT(S) = 1.8 V
1.840

1.210
1.200
1.190

VDD = 3.6 V

2. 5−40 −25

1.800

1.760
0

25
Ta [C]50

VDD = 5.5 V

1.780

1.180
1.170

VDD = 2.2 V
VDD = 3.6 V

1.820

VOUT [V]

VOUT [V]VDD = 2.2 V

VDD = 5.5 V

75 85

Output voltage (VOUT) vs. Temperature (Ta)VOUT(S) = 1.2 V
1.230
1.220

50

75 85

−40 −25025Ta [C]50

75 85

Output voltage (VOUT) vs. Temperature (Ta)VOUT(S) = 2.5 V

2.560

VOUT [V]2.540
VDD = 5.5 V

2.520
2.500
2.480

VDD = 3.6 V

2.460
2.440

2. 6

40 25025Ta [C]50

75 85

ON time (tON) vs. Temperature (Ta)

2. 7

1.2

1.4

0.8

VDD = 3.6 V

0.6

VDD = 2.2 V

0.4
0.2

18

fSW [MHz]tON [s]

1.0

0.0

Switching frequency (fSW) vs. Temperature (Ta)VDD = 5.5 V−40 −25025Ta [C]

1.2
1.0
0.8
0.6

50

75 85

VDD = 3.6 V

VDD = 5.5 V−40 −250

VDD = 2.2 V

25
Ta [C]50

75 85

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series

Soft-start wait time (tSSW) vs. Temperature (Ta)

2.00

2.00

1.50

VDD = 5.5 V

1.00

VDD = 3.6 V

40 25

VDD = 2.2 V

25
Ta [C]50

2. 11

RLFET [m]

RHFET [m]0.50

VDD = 2.2 V

VDD = 5.5 V
40

25

1.00

75 85

VDD = 3.6 V

025
Ta [C]

50

250

200

200

100
50
0

−40 −25025Ta [C]

50

0.6
0.2
0.0

VDD = 2.2 V−40 −25

VDD = 3.6 V
25
Ta [C]

25

0

VDD = 3.6 V

25
Ta [C]

50

75 85

VDD = 5.5 V
VDD = 3.6 V

100

VDD = 2.2 V

50

0

25
Ta [C]

50

75 85

VDD = 5.5 V

1.0
0.8
0.6
0.4
0.2

75 85

−40 −25

1.2

0.0

0

75 85

2. 15 Low level input voltage (VSL) vs. Temperature (Ta)VSL [V]

0.8
0.4

VDD = 5.5 V

150

0

75 85

VDD = 5.5 V

1.0

50

50

2. 14 High level input voltage (VSH) vs. Temperature (Ta)1.2

25
Ta [C]

2. 13 Low side power MOS FET leakage current (ILSW)
vs. Temperature (Ta)250

VDD = 5.5 V

0

VDD = 2.2 V

40

300

VDD = 3.6 V
VDD = 2.2 V40 25

800
700
600
500
400
300
200
100
0

300

150

VDD = 3.6 V

VDD = 5.5 V

Low side power MOS FET on-resistance (RLFET)
vs. Temperature (Ta)75 85

2. 12 High side power MOS FET leakage current (IHSW)
vs. Temperature (Ta)VDD = 2.2 V

1.50

0.00
0

2. 10 High side power MOS FET on-resistance (RHFET)
vs. Temperature (Ta)
800
700
600
500
400
300
200
100
0

tSS [ms]

2.50

0.00

IHSW [nA]Soft-start time (tSS) vs. Temperature (Ta)

2.50

0.50

VSH [V]

2. 9

ILSW [nA]tSSW [ms]2. 8

VDD = 2.2 V40 250

VDD = 3.6 V

25
Ta [C]

50

75 85

19

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series

2.2

2.2

2.1

2.1

2.0

2.0

1.9
1.8
1.7
1.6

20

2. 17 UVLO release voltage (VUVLO+) vs. Temperature (Ta)VUVLO [V]VUVLO [V]2. 16 UVLO detection voltage (VUVLO−) vs. Temperature (Ta)

1.9
1.8
1.7

40 25025Ta [C]

50

75 85

1.6

40 25025Ta [C]50

75 85

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
Transient response characteristics

The external parts shown in Table 14 are used in "3.

Transient response characteristics".

Table 14
Element Name
Inductor
Input capacitor
Output capacitor

Part Number
DFE201210S-2R2M=P2
C1005X5R0J106M050BC
C1005X5R0J106M050BC

Power-on (VOUT = 1.8 V, VIN = 0 V → 3.6 V, Ta = +25°C)

45

3. 1. 2
4
3
2
1
0
−1
−2
−3
−4

IOUT = 50 mA

VIN
VOUT
IL

0

1

2
3
Time [ms]

4

1,400
1,200
1,000
800
600
400
200
0
−200

IL [mA]

1,400
1,200
1,000
800
600
400
200
0
−200

VIN [V], VOUT [V]

3. 1. 1 IOUT = 0.1 mA
4
3
2
1
0
−1
−2
−3
−4
0
1
2
3
Time [ms]3. 2Manufacturer
Murata Manufacturing Co., Ltd.
TDK Corporation
TDK Corporation

IL [mA]

VIN [V], VOUT [V]3. 1

Constant
2.2 μH
10 μF
10 μF

5

Transient response characteristics of EN pin

IL
4

5

IOUT = 50 mA

VEN

IL [mA]

VOUT
IL

0

1

2
3
Time [ms]

4

1,400
1,200
1,000
800
600
400
200
0
−200

5

Power supply fluctuation (VOUT = 1.8 V, Ta = +25°C)
IOUT = 0.1 mA

5

3. 3. 2

VIN = 3.6 V → 4.2 V → 3.6 V
2.10

5
4

4

VIN

2.00

3

VOUT

1.90

2
1
0

10

20
30
Time [ms]40

50

IOUT = 50 mA
VIN = 3.6 V → 4.2 V → 3.6 V
2.10

3

1.80

2

1.70

1

2.00

VIN
VOUT

1.90

VOUT [V]3. 3. 1

VIN [V]VOUT

3. 2. 2
4
3
2
1
0
−1
−2
−3
−4

VIN [V]

3. 3

VEN

1,400
1,200
1,000
800
600
400
200
0
−200

VEN [V], VOUT [V]

3. 2. 1 IOUT = 0.1 mA
4
3
2
1
0
−1
−2
−3
−4
0
1
2
3
Time [ms]IL [mA]

VEN [V], VOUT [V](VOUT = 1.8 V, VIN = 3.6 V, VEN = 0 V → 3.6 V, Ta = +25°C)

VOUT [V]

3.

1.80
1.70
0

10

20
30
Time [ms]

40

50

21

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series

Load fluctuation (VOUT = 1.8 V, VIN = 3.6 V, Ta = +25°C)

50
IOUT [mA]

0

IOUT

−50

3. 4. 2
100

1.95

50

1.90

0

1.85

−100

1.80
VOUT

−150
−200

2.00

0

10

20
Time [ms]

30

2.00
1.95
IOUT

−50

−100

1.75

−150

1.70

−200

40

IOUT = 0.1 mA → 50 mA → 0.1 mA

1.90
1.85

1.80
VOUT 1.75
01020Time [ms]VOUT [V]IOUT = 0.1 mA → 10 mA → 0.1 mA

IOUT [mA]

3. 4. 1
100

VOUT [V]

3. 4

1.70
40

30

 Reference Data
The external parts shown in Table 15 are used in " Reference Data".
Table 15
Condition
<1>
<2>

η [%]

1. 1

Efficiency (η) vs. Output current (IOUT)

1. 2

1.5

80

1.4

60
40

0
0.001

VIN = 3.6 V
VIN = 5.5 V

VIN = 3.6 V

1.3
1.2
1.1

0.01

0.1
1
IOUT [mA]

10

1.0
0.001

100

VIN = 5.5 V
0.01

0.1
1
IOUT [mA]

10100

VOUT = 1.8 V (External parts: Condition<1>)
Efficiency (η) vs. Output current (IOUT)

2. 2

Output voltage (VOUT) vs. Output current (IOUT)

100

2.0

80

1.9

60
40

VOUT [V]

η [%]

2. 1

VIN = 3.6 V
VIN = 5.5 V

20
0
0.001

22

Output voltage (VOUT) vs. Output current (IOUT)

100

20

2.

Output Capacitor (COUT)
GRM035R60J475ME15 (4.7 μF)
Murata Manufacturing Co., Ltd.
C1005X5R0J106M050BC (10 μF)
TDK Corporation

VOUT = 1.2 V (External parts: Condition<1>)

VOUT [V]1.

Input Capacitor (CIN)
GRM035R60J475ME15 (4.7 μF)
Murata Manufacturing Co., Ltd.
C1005X5R0J106M050BC (10 μF)
TDK Corporation

Inductor (L)MBKK1608T2R2M (2.2 μH)
TAIYO YUDEN CO.,LTD.
DFE201210S-2R2M=P2 (2.2 μH)
Murata Manufacturing Co., Ltd.

VIN = 3.6 V

1.8
1.7

VIN = 5.5 V

1.6
0.01

0.1
1
IOUT [mA]

10

100

1.5
0.001

0.01

0.1
1
IOUT [mA]10100

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series
VOUT = 1.2 V (External parts: Condition<2>)
3. 2

Output voltage (VOUT) vs. Output current (IOUT)

100

1.5

80

1.4

60
40

VIN = 3.6 V
VIN = 5.5 V

1.2

20

1.1

0
0.001

1.0
0.001

0.01

0.1
1
IOUT [mA]

10100

VIN = 5.5 V

1.3

VIN = 3.6 V
0.01

0.1
1
IOUT [mA]

10100

VOUT = 1.8 V (External parts: Condition<2>)
4. 1

η [%]

4.

Efficiency (η) vs. Output current (IOUT)

VOUT [V]

η [%]

3. 1

Efficiency (η) vs. Output current (IOUT)

4. 2

Output voltage (VOUT) vs. Output current (IOUT)

100

2.0

80

1.9

60
40

VOUT [V]3.

VIN = 3.6 V
VIN = 5.5 V

20
0
0.001

VIN = 5.5 V

1.8
1.7

VIN = 3.6 V

1.6
0.01

0.1
1
IOUT [mA]

10

100

1.5
0.001

0.01

0.1
1
IOUT [mA]

10

100

23

5.5 V INPUT, 50 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.2_00
S-85S0A Series Power Dissipation
SNT-6A
Tj = 125C max.

Power dissipation (PD) [W]

1.0
0.8
B

0.6

A
0.4
0.2
0.0

0

25

50

75

100

125

150

Ambient temperature (Ta) [C]

24

Board

Power Dissipation (PD)A

0.45 W

B
C

0.57 W
−

D

−

E

−

175

SNT-6A Test Board(1) Board A

IC Mount Area
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]

1
2
3
4

Thermal via

Specification
114.3 x 76.2 x t1.6
FR-4
2Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.070-(2) Board B
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]Thermal via

1
2
3
4

Specification
114.3 x 76.2 x t1.6
FR-4
4Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070-

No. SNT6A-A-Board-SD-1.0

ABLIC Inc.

1.57±0.03
6

5

4

1

2

3

+0.05
0.08 -0.02

0.5

0.48±0.02

0.2±0.05

No. PG006-A-P-SD-2.1

TITLE

SNT-6A-A-PKG Dimensions

No.

PG006-A-P-SD-2.1

ANGLE
UNIT

mm

ABLIC Inc.

+0.1

ø1.5 -0

4.0±0.1

2.0±0.05

0.25±0.05+0.1

1.85±0.05

ø0.5 -0

4.0±0.1

0.65±0.05

3 2 1

4

5 6

Feed direction

No. PG006-A-C-SD-2.0

TITLE

SNT-6A-A-Carrier Tape

No.

PG006-A-C-SD-2.0

ANGLE
UNIT

mm

ABLIC Inc.

12.5max.

9.0±0.3

Enlarged drawing in the central part
ø13±0.2

(60°)

(60°)

No. PG006-A-R-SD-1.0

TITLE

SNT-6A-A-Reel

No.

PG006-A-R-SD-1.0

ANGLE

QTY.

UNIT

mm

ABLIC Inc.

5,000

0.52

1.36

2

0.52

0.2 0.3

1.
2.

1(0.25 mm min. / 0.30 mm typ.)(1.30 mm ~ 1.40 mm)
0.03 mm
SNT

1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1.
2.

(0.25 mm min. / 0.30 mm typ.)(1.30 mm ~ 1.40 mm)

No. PG006-A-L-SD-4.1

TITLE

SNT-6A-A-Land Recommendation

No.

PG006-A-L-SD-4.1

ANGLE
UNIT

mm

ABLIC Inc.

Disclaimers (Handling Precautions)1.

All the information described herein (product data, specifications, figures, tables, programs, algorithms andapplication circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.

2.

The circuit examples and the usages described herein are for reference only, and do not guarantee the success ofany specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any otherright due to the use of the information described herein.

3.

ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information describedherein.

4.

Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due tothe use of the products outside their specified ranges.

5.

Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.

6.

When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-relatedlaws, and follow the required procedures.

7.

The products are strictly prohibited from using, providing or exporting for the purposes of the development of
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,biological or chemical weapons or missiles, or use any other military purposes.

8.

The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.

9.

In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products areallowed to apply for the system on customer's own responsibility.

10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of thisdocument described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
permission of ABLIC Inc.
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
representative.
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07

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