IFFF 2002
ISAF XIII, ISIF XIV & FMA XIX
CONFERENCE OVERVIEW
Tuesday

WednesdayThursdayFridaySaturday

5.28

5.29

5.30

5.31

6.1

Parallel oral

Parallel oral

Excursions

sessions

sessions(Optional)

Opening
Remarks
Plenarylecture (I)

9:00
9:30

10:30

Parallel

break

break

break

11:00

tutorials

Parallel oral

Parallel oral

Parallel oral

sessions

sessions

sessions

12:30

lunch

lunch

lunch

13:30

Parallel oral

Parallel oral

Parallel oral

sessions

sessions

sessions

15:15

break

break

break

15:45

Parallel oral

16:00

sessions

16:45

Registration

17:15

Postersession (III)

Attraction
break

17:30

Plenarylecture (II)break

PosterPostersession (I)session (II)break

Plenarylecture (III)Closing
Remarks

18:30
19:00

Welcome

19:15“SHOEI” party

break

break

Farewell party

Japanese
night

20:00

Banquet(Mitsui Garden
Hotel Nara)

End

20:30

20:30

22:30

20:30

IFFF 2002
ISAF XIII, ISIF XIV & FMA XIXPARALLEL ORAL SESSION DIGEST
Wednesday, 5.29
Noh-Theatre

Reception Hall

Conference

Conference

Room 1Room 3

11:00 – 12:30

Thin films (I)Piezoelectrics (I)Characterization (I)Fundamental (I)

13:30 – 15:15

Thin films (II)FeRAM &

Characterization

Relaxors

Devices (I)(II)

Piezoelectrics (II)Domain &15:45 – 17:15

Thin films (III)

Optics (I)SwitchingThursday, 5.30
Noh-Theatre

9:00 – 10:30

Thin films (IV)

Reception Hall

Piezoelectrics (III)

Conference

Conference

Room 1Room 3Characterization

Fundamental (II)(III)

11:00 – 12:30

13:30 – 15:15

Thin films (V)Thin films (VI)

FeRAM &

Characterization

Devices (II)(IV)

Piezoelectrics (IV)

Micro-

Dielectrics (I)Optics (II)Ferroelectrics

Friday, 5.31
Noh-Theatre

9:00 – 10:30

Thin films (VII)

Reception Hall

Piezoelectrics (V)Conference

Conference

Room 1Room 3Characterization

Device Integration(V)

11:00 – 12:30

Thin films (VIII)

Pyroelectrics

Characterization

Microwave Devices(VI)

13:30 – 15:15

Thin films (IX)

Piezoelectrics (VI)High-k andGate Oxides

Dielectrics (II)IFFF 2002
ISAF XIII, ISIF XIV & FMA XIXPOSTER SESSION DIGEST
Wednesday, 5.29

17:30 – 19:00

Conference

Conference

Room 2

Room 4Microwaves (I)DomainReception Hall

Gallery

Characterization

Thin films
fabrication

Miscellaneous

Pb system (I)Fundamental,
Theory, Model

Thursday, 5.30

17:30 – 19:00

Conference

Conference

Room 2

Room 4

Dielectrics

Piezoelectrics (I)Reception Hall

Gallery

MFS, MFMIS

Thin films
fabrication(Capacitors,
Ceramics)

FeRAM, Device,

Pb system (II),Integration, Circuits

SBT system,

Ferroelectrics

BIT system,(Ceramics)

etc (I)

Friday, 5.31

15:45 – 17:15

Conference

Conference

Room 2

Room 4Single Crystals

Piezoelectrics (II)(Growth,Properties)

Reception Hall

GalleryThin films

Thin films

fabrication etc (II)properties (I)Pyroelectrics
Thin films

Microwaves (II)Opticsproperties (II)ElectrodeHigh-k, Gate-oxide

IFFF Program
5/29 (Wed.)
Plenary
Noh Theatre
Plenary (I)(9:30 --- 10:30)

29A-PL1-1PL

THE DOWN SCALING OF PIEZOELECTRIC AND PYROELECTRIC CERAMICS:
MICRODEVICES, NANOFABRICATION, AND SIZE EFFECTS
N. Setter (EPFL)

Oral
Noh Theatre
Thin Films (I) (11:00 --- 12:30)
29A-TF1-1IN
11:00<INVITED> A MASS-PRODUCTION COMPATIBLE METAL-ORGANIC CHEMICAL VAPORDEPOSITION PROCESS OF Pb(Zr,Ti)O3 THIN FILMS AT LOW TEMPERATURES.
S. Jeong, J.-S. Zhao, J. Lim and C. S. Hwang (Seoul National University)

29A-TF1-2C
11:30

IMPACT OF THICKNESS AND A-SITE STOICHIOMETRY ON THE RELIABILITY OF
MOCVD Pb(Zr,Ti)O3 THIN FILMS
D. V. Taylor, S. R. Gilbert, D. Ritchey, J. Amano, S. Aggarwal*, T. Sakoda*, T. S. Moise*, S.
R. Summerfelt*, F. Celii*, J. Rodriquez*, S. Martin* and K. J. Taylor* (Agilent Technologies
and *Texas Instruments Inc.)

29A-TF1-3C
11:45

REPRODUCIBILITY OF MOCVD-PZT THIN FILMS IN THE LONG TERM CONTINUOUS
RUNNING BY PZT-MOCVD PRODUCTION MODULE
T. Yamada, T. Masuda, M. Kajinuma, H. Uchida, M. Uematsu, K. Suu and M. Ishikawa(ULVAC, Inc)

29A-TF1-4C
12:00

Pb(Zr,Ti)O3 THIN FILMS DEPOSITED BY MOCVD FOR EMBEDDED MEMORYTECHNOLOGY
S. Aggarwal, S. Martin, F. Celii, L. Hall, J. Rodriguez, K. R. Udayakumar, S. R. Summerfelt,
T. S. Moise and K.J. Taylor (Texas Instruments Inc.)

29A-TF1-5C
12:15

GROWTH OF PZT THIN FILMS BY LS-MOCVD FOR HIGH DENSITY FeRAM APPLICATION
J. K. Lee, M. -S. Lee*, S. Hong**, W. Lee**, Y. K. Lee and Y. Park (Samsung Advanced
Institute of Tech, *Samsung Electronics and **Inha University)Thin Films (II) (13:30 --- 15:15)
29A-TF2-1C
13:30

ELECTRICAL PROPERTIES OF DIELECTRIC AND FERROELECTRIC FILMS PREPAREDBY PLASMA ENHANCED ATOMIC LAYER DEPOSITION
W.-J. Lee, B.-G. Chae, S.-O. Ryu, I.-K. You, S. M. Cho, B.-G. Yu and K.-I. Cho (ETRI)

29A-TF2-2C
13:45

CHARACTERIZATION OF PLZT FILM CAPACITOR DEGRADATION IN REDUCINGAMBIENTS USING A NEWLY DEVELOPED IN-SITU PROBER
J. S. Cross and M. Tsukada (Fujitsu Laboratories)

29A-TF2-3C
14:00

DIELECTRIC AND POLARIZATION CHARERISTICS OF SOL-GEL DERIVED LEADZIRCONATE TITANATE THIN FILMS: EFFECT OF ERBIUM DOPING
R. S. Katiyar, A. Dixit, B. Roy, W. Jia and S. B. Majumder (University of Puerto Rico)

29A-TF2-4C
14:15

LEAD CONTENT CONTROL IN PZT FILMS BY USING Ar/O2 SEQUENTIAL
CRYSTALLIZATION ANNEALING
O. Arisumi , S. Nakamura, B. K. Moon*, K. Yamakawa and K. Imai (Toshiba Corp. and*Infineon Technologies Corp.)

29A-TF2-5C
14:30

EFFECT OF TEXTURED Pb(Zr1-XtiX)O3 SEED LAYER ON FATIGUE IMPROVEMENTOF FERROELECTRIC Pb0.99[(Zr0.6Sn0.4)0.85Ti0.15]0.98Nb0.02O3
THIN FILMS
K. H. Yoon, H. C. Shin and D. H. Kang* (Yonsei University and *University of Suwon)

29A-TF2-6C
14:45

ROLE OF FLUORITE FORMATION IN ORIENTATION SELECTION IN SOL-GEL DERIVEDPZT FILMS ON PT ELECTRODE LAYERS
G. J. Norga, L. Fè, F. Vasiliu* and O. Van der Bies** (IMEC vzw, *National Institute ofMaterials Physics and **KU Leuven)

29A-TF2-7C
15:00

RELATIONSHIP BETWEEN ORIENTATION AND FERROELECTRIC PROPERTIES IN
Ir/PZT/Ir EPITAXIAL CAPACITORS
K.Okuwada, J.Ishida*, T.Yamada*, A.Sawabe* and K.Saito** (Toshiba Corporation,*Aoyama-Gakuin University and **Phillips Japan)

Thin Films (III)(15:45 --- 17:15)

29A-TF3-1IN
15:45<INVITED> DEVELOPMENT OF MATERIALS INTEGRATION STRATEGIES FOR
ELECTROCERAMIC FILM-BASED DEVICES VIA COMPLEMENTARY IN SITU / EX SITUSTUDIES OF FILM AND INTERFACE PROCESSES
O. Auciello, A. H. Muller*, E. A. Irene*, A. M. Dhotel** and R. Ramesh** (Argonne National
Laboratory, *University of North Carolina and **University of Maryland)

29A-TF3-2C
16:15

Ln (Ln=La, Pr, Nd, Sm) DEPENDENCE ON FERROELECTRIC PROPERTY FOR(Bi3.25Ln0.75)(Ti2.97V0.03)O12 THIN FILMS PREPARED AT LOWDEPOSITION TEMPERATURE
T. Sakai, T. Watanabe, T. Kojima, M. Osada, Y. Noguchi*, M. Miyayama* and H. Funakubo(Tokyo Institute of Technology and *University of Tokyo)

29A-TF3-3C
16:30

BOTH OHMIC CONTACT PROPERTIES OF TUNGSTEN PLUG AND FERROELECTRIC
PROPERTIES OF (Bi,La)4Ti3O12 THIN FILM IN STACKED CAPACITOR STRUCTURE
S.- Y. Kweon, N.- K. Kim, E.- S. Choi, S.- J. Yeom and J.- S. Roh (HYNIX Semiconductor Inc.)

29A-TF3-4C
16:45

FERROELECTRIC CHARACTERISTICS OF Bi4-XLaXTi3O12 THIN FILMS
CRYSTALLIZED AT LOW TEMPERETURES
K. Tanaka, T. Uno and Y. Shimada (Matsushita Electric Industrial Co.)

29A-TF3-5C
17:00

SOL-GEL HYDROTHERMAL SYNTHESIS OF BARIUM STRONTIUM TITANATE THIN FILMS
K. Zelonka, M. Sayer, H. Hammad and A. P. Freundorfer (Queen's University)

Reception Hall
Piezoelectrics (I) (11:00 --- 12:30)
29B-PI1-1IN
11:00<INVITED> CRITICAL ISSUES IN SINGLE CRYSTAL GROWTH OF PMN:PT BY SEEDEDPOLYCRYSTAL CONVERSION
H. M. Chan and M. P. Harmer (Lehigh Univ.)

29B-PI1-2C
11:30

ON ORIGIN OF THE ENHANCED PIEZOELECTRIC RESPONSE ALONG A NONPOLAR
DIRECTION IN SIMPLE PEROVSKITES
D. Damjanovic, F. Brem and N. Setter (Swiss Federal Institute of Technology – EPFL)

29B-PI1-3C
11:45

HIGH TEMPERATURE, HIGH PERFORMANCE MATERIALS
T. R. Shrout, R. Eitel, S. Zhang, C. A. Randall, P. Rehrig* and E. Alberta* (Penn State
University and *TRS Ceramics, Inc.)

29B-PI1-4C
12:00

PIEZOELECTRIC PROPERTIES DEPENDENCE ON THICKNESS OF PZT FILMSFABRICATED BY AEROSOL DEPOSITION METHOD
M. Lebedev and J. Akedo (AIST)

29B-PI1-5C
12:15

APPARENT REDUCTION IN THE VALUE OF THE d33 PIEZOELECTRIC COEFFICIENT INPZT THICK FILMS
R. A. Dorey and R. W. Whatmore (Cranfield University)

FeRAM & Devices (I) (13:30 --- 15:15)
29B-FD1-1IN
13:30<INVITED> KEY TECHNOLOGIES FOR HIGH DENSITY FERAM APPLICATIONS
N. Nagel (Infineon Technologies)

29B-FD1-2C
14:00

SCALING AND PERFORMANCE ISSUES OF LOW TEMPERATURE CRYSTALLIZED
Pb(Zr,Ti)O3 THIN FILMS FOR HIGH DENSITY FRAM DEVICES
S.-H. Kim, C. Y. Koo, D.-S. Lee, H.-J. Woo, D. Y. Park, J. Yang and J. Ha (INOSTEK Inc.)

29B-FD1-3C
14:15

A LOW TEMPERATURE LNO/PZT/LNO FERROELECTRIC
CAPACITOR-OVER-INTERCONNECT (COI) FERAM MODULE FOR ADVENCED
S. L. Lung, S. S. Chen, C. W. Tsai, T. T. Sheng, S. C. Lia*, C. L. Liu*, T. B. Wu* and R. Liu(Macronix International Co and *National Tsing Hua University)

29B-FD1-4C
14:30

THE CONTROL OF LEAD LOSS FOR PZT BASED FRAM
F. Chu and G. Fox (Ramtron International Corporation)

29B-FD1-5C
14:45

NOVEL PROCESS INTEGRATION OF PZT CAPACITOR FOR 32M FRAM AND BEYOND
K. M. Lee, K. S. Park, S. D. Nam, S. W. Lee, S. H. Joo, H. G. An, H. J. Kim, M. S. Lee, S. O.
Park, U. I. Chung and J. T. Moon (Samsung Electronics Co.)

29B-FD1-6C
15:00

LOW THERMAL BUDGET PROCESS OF THIN SrBi2Ta2O9 FILM FOR 3V OR LOWER
VOLTAGE OPERATION OF HIGH DENSITY FERAM
M. Lim, V. Joshi, S. Narayan, J. Celinska, Z. Chen, C.A. Paz De Arouujo and L. D. McMillan(Symetrix Corporation)

Piezoelectrics (II) (15:45 --- 17:15)
29B-PI2-1C
15:45

VIBRATION CHARACTERISTICS OF MICROMACHINED LEAD ZIRCONATE TITANATE
DIAPHRAGMS
E. Hong, S. V. Krishnaswamy, C. B. Freidhoff and S. T.-McKinstry (The Pennsylvania State
University)

29B-PI2-2C
16:00

SOUND GENERATION WITH PIEZOELECTRIC ACTUATORS FOR ACTIVE NOISE
REDUCTION APPLICATIONS
T. Morita, E. L. Colla and N. Setter (Swiss Federal Institute of Technology)

29B-PI2-3C
16:15

EVALUATION OF LOW TEMPERATURE PROCESSING OF LEAD ZIRCONATE TITANATE(53/47) CERAMICS DERIVED FROM 1-PROPANOL BASED SOL-GEL STOCK SOLUTIONS
L. Wu, B.-Huei Chen, T.-Y. Chang, J. L.- Hunang and C.-L. Huang (National Cheng Kung
University)

29B-PI2-4C
16:30

LOW TEMPERATURE SINTERING OF PIEZOELECTRIC THICK FILMS DERIVED FROM ANOVEL SOL-GEL ROUTE
W. Zhu, Z. H. Wang, C. L. Zhao and O. K. Tan (Nanyang Technological University)

29B-PI2-5C
16:45

PROCESSING AND CHARACTERIZATION OF PRESSURE CONSOLIDATED LEAD-FREEPIEZOCERAMICS BASED ON ALKALINE NIOBATES
C. Pithan, B. Malic*, E. Ringgard** and R. Waser (Institute for Electroceramic Materials,*Jozef Stefan Institute and **Ferroperm Piezoceramics A/S)

29B-PI2-6C
17:00

PREPARATION OF ORIENTATION-CONTROLED Pb(Zr,Ti)O3(PZT) THICK FILM
PREPARED BY HIGH-SPEED MOCVD AND THEIR PROPERTY
S. Yokoyama, T. Ozeki, T. Oikawa, Y. Ichikawa*, Y. Yamashita*, T. Ochiai* and H.
Funakubo (Tokyo Institute of Technology and *TOYO Corporation)

Conference Room 1
Characterization (I) (11:00 --- 12:30)
29C-CH1-1IN
11:00<INVITED> IN-SITU SYNCHROTRON X-RAY STUDIES OF METAL-ORGANIC CHEMICALVAPOR DEPOSITION OF Pb(ZrxTi1-x)O3 THIN FILM
S. K. Streiffer*, G. B. Stephenson*, J. A. Eastman*, D. Fong*, M. E. M. Aanerud**, C.
Thompson*,**, O. Auciello*, G.-R. Bai* and L. Thompson* (*Materials Science Division,
Argonne National Laboratory and **Northern Illinois University)29C-CH1-2C
11:30

ANNEALING EFFECT OF PHOTOELECTRON SPECTRA IN SrBi2Ta2O9 FILM
M. Takahashi, K. Kodama, M. Noda, P. Hedblom*, A. Grishin* and M. Okuyama (Osaka
University and *Royal Institute of Technology)

29C-CH1-3C
11:45

ELECTRICAL PROPERTIES AND MICROSTRUCTURES OF FERROELECTRIC PbZrTiO3THIN FILMS PREPARED BY LASER ANNEALING
C.-F. Chou, H.-C. Pan and C.-C. Chou (National Taiwan University)

29C-CH1-4C
12:00

DIELECTRIC PROPERTIES OF CAPACITOR MATERIALS IN THE OPTICAL FREQUENCY
RANGE
M. Biegalski and S. T.-McKinstry (Pennsylvania State University)

29C-CH1-5C
12:15

ELECTRONIC STRUCTURES OF Bi4Ti3O12 THIN FILM AND SINGLE CRYSTAL BY
RESONANT SOFT-X-RAY EMISSION SPECTROSCOPY
T. Higuchi, K. Kudoh, T. Takeuchi, Y. Masuda*, S. Shin** and T. Tsukamoto (Tokyo
University of Science, *Hachinohe Institute of Technology and **University of Tokyo)

Characterization (II)(13:30 --- 15:15)

29C-CH2-1IN
13:30<INVITED> SCANNING NONLINEAR DIELECTRIC MICROSCOPY -A HIGH RESOLUTION
TOOL FOR OBSERVING FERROELECTRIC DOMAINS AND NANO-DOMAIN
Y. Cho (Tohoku University)

29C-CH2-2C
14:00

WAFER-LEVEL TESTING OF SINGLE 1T-1C FERROELECTRIC MEMORY CELLS
S. Tiedke, J. Rickes, T. Schmitz and R. Waser (aixACCT Systems GmbH)

29C-CH2-3C
14:15

PHOTOINDUCED DOMAIN PINNING AND HYSTERESIS CHANGES IN
FERROELECTRIC THIN FILMS STUDIED BY SCANNING FORCE MICROSCOPY
A. Gruverman, A. I. Kingon, B. J. Rodriguez and R. J. Nemanich (North Carolina State
University)

29C-CH2-4C
14:30

NOVEL NUMERICAL METHOD TO CORRECT FOR BOTH CIRCUIT DISTORTIONS ANDPASSIVE LAYERS EFFECT AFFECTING SAWYER-TOWER FERROELECTRIC THIN FILMS
HYSTERESIS MEASUREMENTS
R. Bouregba and G. Poullain (Laboratoire CRISMAT-ISMRA et Université de Caen)

29C-CH2-5C
14:45

ROLE OF NON-180o DOMAIN SWITCHING IN ELECTRIC PROPERTIES OF Pb(Zr,Ti)O3
THIN FILMS
K. Saito, T. Oikawa*, T. Kurosawa, T. Akai and H. Funakubo* (*Philips Japan Ltd. and**Tokyo Institute of Technology)

29C-CH2-6C
15:00

THICKNESS-DEPENDENT LEAKAGE CURRENT OF (PVDF/PbTiO3) PYROELECTRIC
BILAYER THIN FILM DETECTORS
M. C. Kao, C. M. Wang* and Y. C. Chen (National Sun Yat-Sen University and *Cheng-Shiu
Institute of Technology)

Domain & Switching(15:45 --- 17:15)

29C-DS-1IN
15:45<INVITED> INFLUENCE OF DOMAIN ORIENTATION AND GRAIN SIZE ON PZT THIN FILM
PROPERTIES
B. A. Tuttle, G. Brennecka, P. G. Clem, T. J. Boyle, J. T. Dawley, M. A. Rodriguez, S.
Streiffer*, G. R. Bai* and A. Auciello* and R. Ramesh** (Sandia National Laboratories,*Argonne National Laboratories and **University of Maryland)

29C-DS-2C
16:15

MODEL RELATING POLARIZATION SWITCHING AND CRYSTALLOGRAPHIC TEXTURE OFPZT FOR FRAM APPLICATIONS
G. R. Fox, S. Sun and S. Summerfelt* (Ramtron International Corporation and *Texas
Instruments Corporation)

29C-DS-3C
16:30

NON-KOLMOGOROV-AVRAMI KINETICS OF SWITCHING IN FERROELECTRIC THIN
A. Tagantsev, I. Stolichnov, E. Colla, N. Setter, J. S. Cross* and M. Tsukada* (Swiss Federal
Institute of Technology and *Fujitsu Laboratories, Ltd.)29C-DS-4C
16:45

A RANDOM-FIELD MODEL FOR FERROELECTRIC DOMAIN DYNAMICS AND
POLARIZATION REVERSAL
D. Viehland and J. F. Li (Virginia Tech)

29C-DS-5C
17:00

SPONTANEOUS BACKSWITCHING AS A PERFECT TOOL FOR NANO-SCALE DOMAINPATTERNING
V. Shur, E. Rumyantsev, E. Nikolaeva, E. Shishkin, D. Fursov, R. Batchko*, M. Fejer* and R.
Byer* (Ural State University and *Stanford University)

Conference Room 3
Fundamental (I) (11:00 --- 12:30)
29D-FU1-1IN
11:00<INVITED> A THERMODYNAMIC MODEL FOR THE MORPHOTROPIC PHASE BOUNDARYREGION IN LEAD ZIRCONATE TITANATE AND RELATED MATERIALS
A. J. Bell (University of Leeds)

29D-FU1-2C
11:30

IMPROVED MIXING RULE ON PERMITTIVITY
K. Wakino (Murata Manufacturing Company Ltd. and Ritsumeikan University)

29D-FU1-3C
11:45

PHENOMENOLOGICAL THEORY OF FINITE SIZE EFFECTS IN NANOPHASE
FERROELECRTICS
E. K. Akdoğan and A. Safari (Rutgers University)

29D-FU1-4C
12:00

FIRST-PRINCIPLES CALCULATIONS OF NEW FERROELECTRIC MATERIAL SnTiO3
Y. Konishi, M. Ohsawa and Y. Yonezawa (Fuji Electric Corporate Research and Development)

29D-FU1-5C
12:15

NEW ACCURATE TECHNIQUE FOR SOLVING THE LIMM EQUATION AND A
COMPARISON WITH OTHER METHODS
S. B. Lang (Ben-Gurion University of the Negev)

Relaxors(13:30 --- 15:15)

29D-RE-1C
13:30

TEMPERATURE AND POLING FIELD DEPENDENCES OFFERROELECTRIC PROPERTIESIN Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 SINGLE CRYSTAL
T. Ogawa, Y. Numamoto and Y. Yamauchi (Shizuoka Institute of Science and Technology)

29D-RE-2C
13:45

TEMPERATURE DEPENDENCE OF FREQUENCY AND DIELECTRIC CONSTANTS OF
PURE AND DOPED PBSZT CERAMICS IN THE MORPHOTROPIC PHASE BOUNDARY
B. Guiffard, E. Boucher, L. Lebrun and D. Guyomar (INSA LYON)

29D-RE-3C
14:00

EPITAXIAL PMN-PT PIEZOELECTRIC THICK FILM HETEROSTRUCTURES FOR HIGHFREQUENCY MEICAL ULTRASOUND TRANSDUCERS
C. B. Eom, S. D. Bu, D. M. Kim, S. K. Streiffer*, W. Tian**, X. Q. Pan**, T. Yoshimura***and S. Trolier-McKinstry*** (University of Wisconsin-Madison, *Argonne National
Laboratory, **University of Michigan and ***The Pennsylvania State University)

29D-RE-4C
14:15

TOP-SEEDED SOLUTION GROWTH OF Pb[(Zn1/3Nb2/3)0.93Ti0.07]O3 SINGLECRYSTAL
T. Karaki, M. Nakamoto and M. Adachi (Toyama Prefectural University)

29D-RE-5C
14:30

CRYSTALLINE PROPERTIES OF FERROELECTRIC-RELAXOR PMN-PT THIN FILMS BY
PULSED LASER DEPOSITION
S. K. Singh, P. A. Thomas and S. B. Palmer (University of Warwick)

29D-RE-6C
14:45

PRODUCTION AND GROWTH OF COMPOSITIONALLY UNIFORM SINGLE CRYSTALS OF
PMN-PTP. W. Rehrig, W. S. Hackenberger and T. R. Shrout* (TRS Ceramics, Inc. and *Penn State
University)

29D-RE-7C
15:00

DIELECTRIC DISPERSION AND DISTRIBUTION OF THE RELAXATION TIMES OF THE
RELAXOR PLZT CERAMICS
J. Banys, A. Kajokas, A. Matulis*, A. Brilingas and J. Grigas (Vilnius University and*Institute of Semiconductors Physics,Lith. Ac. Sci)

Optics (I) (15:45 --- 17:15)
29D-OP1-1IN
15:45<INVITED> PLZT THIN FILM OPTICAL WAVEGUDE DEVICES
K. Nashimoto (Fuji Xerox Lightwave Technologies Co., Ltd)

29D-OP1-2C
16:15

FABRICATION OF BRAGG DIFFRACTION TYPE ACOUSTO-OPTIC DEVICE USINGPIEZOELECTRIC PZT THIN FILMS
C. Lee, S. Kim*, T.-H. Sung** and K. No (KAIST, *Korea University of Technology and
Education and **Korea Electric Power Research Institute)

29D-OP1-3C
16:30

FERROELECTRIC THIN FILM OPTICAL DETECTORS FOR RETINAL PROSTHESIS
A. Zomorrodian, N. J. Wu, S. Wilczak, A. Ignatiev, T. Bensaoula* and C. A. Garcia*(University of Houston and *University of Texas)

29D-OP1-4C
16:45

IMPROVEMENT OF LiNbO3 SURFACE ROUGHNESS BY USING A MULTISTEP PROCESS:RELATIONSHIP BETWEEN OPTICAL AND AFM ANALYSIS
X. Lansiaux, E. Dogheche and D. Rémiens (Université de Valenciennes)

29D-OP1-5C
17:00

FERROELECTRIC SWITCHING AND ELECTROCLINIC EFFECT IN LIQUID CRYSTALSSTUDIED BY SECOND HARMONIC GENERATION
Y. G. Fokin, T. V. Murzina, O. A. Aktsipetrov, S. Soria* and G. Marowsky* (Moscow State
University and *Laser-Laboratorium Goettingen e.V.)

PosterConference Room 2
Microwaves (I)(17:30 --- 19:00)

29E-MW1-1P

8 GHz MICROWAVE FILTERS BASED ON BULK ACOUSTIC WAVES IN PIEZOELECTRIC
ALN THIN FILMS
R. Lanz and P. Muralt (Swiss Federal Institute of Technology EPFL)

29E-MW1-2P

MICROWAVE PROPERTIES OF THIN BSTO FILMS DEPENDING ON DEPOSITION
CONDITIONS.
S. V. Razumov, A. V. Tumarkin, M. M. Gaidukov and A. G. Gagarin (St. Petersburg StateElectrotechnical University)

29E-MW1-3P

DESIGN OF MULTILAYER MICROWAVE DEVICES BY COUPLING MATRIX ALGORITHM
FOR LTCC PROCESSER
C.-M. Lei, I.-N. Lin, Y.-C. Chen* and H.-F. Cheng* (National Tsing-Hua University Hsinchu
and *National Taiwan Normal University Taipei)

29E-MW1-4P

60GHz PHASE SHIFTERS BASED ON BSTO FERROELECTRIC FILM
A. Kozyrev, A. Ivanov, O. Soldatenkov, M. Gaidukov, A. Gagarin, A. Tumarkin, S. Razumov,
N. Samoylov and S. Augunova (Electrotechnical University)

29E-MW1-5P

OPTIMIZATION OF REFLECTION TYPE MICROWAVE PHASE SHIFTER WITH RESPECTTO SENSITIVITY TO STATISTICAL DISPERSION OF CIRCUIT CHARACTERISTICS
O. G. Vendik, S. P. Zubko and M. A. Nikol'ski (Elecrotechnical University)

29E-MW1-6P

A 180o X-BAND HIGH PERFORMANCE PHASE SHIFTER
B. Acikel, T. R. Taylor, P. J. Hansen, J. S. Speck and R. A. York (University of California)

29E-MW1-7P

TUNABLE MICROWAVE FILTERS USING FERROELECTRIC MATERIALS
O. G. Vendik, I. B. Vendik, V. V. Pleskachev, M. A. Nikol'ski and M. L. Khazov.
(Electrotechnical University)

29E-MW1-9P

FABRICATION AND PROPERTIES OF MULTIELECTRODE SLOTLINE MICROWAVERESONATOR BASED ON FERROELECTRIC FILM
S. F. Karmanenko, I .G. Mironenko, T. Inushima*, A. A .Ivanov and A. A. Semenov(Electrotechnical University and *Tokai University)29E-MW1-10P

PASSBAND AND STOPBAND TUNABLE FILTERS BASED ON FERROELECTRIC
MULTISLOT RESONATORS
I. G. Mironenko., A.A. Ivanov, S. S. Karmanenko., A. A. Melkov and A. A. Semenov*(Electrotechnical University)

29E-MW1-11P

CHARACTERIZATION OF TUNABLE BANDPASS FILTERS AND PHASE SHIFTERS USING
BST THIN FILMS FOR MICROWAVE APPLICATION.
I.-D. Kim, J.-H. Park, M.-H. Lim, M.-S. Kim, H.-G. Kim, K.-B. Kim*, T.-S. Yun* and J.-C.
Lee* (KAIST and *Kwangwoon University)

29E-MW1-12P

RESULTS OF FULL-WAVE ANALYSIS OF FERROELECTRIC MULTISLOTLINE AND
EXPERIMENTAL STUDY OF THE PHASE SHIFTER
I. G. Mironenko, A. A. Ivanov, T. Inushima*, S. F. Karmanenko and A. A. Semenov(Electrotechnikal University and *Tokai University)

29E-MW1-13P

MICROWAVE DIELECTRIC PROPERTIES OFMETAL-FERROELECTRIC-OXIDE-SEMICONDUCTOR STRUCTURE
S. Abadei (Chalmers University of Technology)

29E-MW1-14P

THEORY AND EXPERIMENTS OF TUNABLE MICROWAVE COUPLED MICROSTRIP PHASESHIFTERS USING BaxSr1-xTiO3 THIN FILMS
F. V. Keuls, C. Mueller, R. Romanofsky and F. Miranda (NASA)

29E-MW1-15P

FINLINE FERROELECTRIC PHASE SHIFTERS AND 30GHz ANTENNA ARRAY ON THEIRBASE.
A. Golovkov, D. Kalinikos, O. Buslov, V. Keis, M. Sugak, A. Kozyrev, P. Kulik and L.
Sengupta* (St. Petersburg Electrotechnical University and *Paratek Microwave Inc.)

29E-MW1-16P

THE DESIGN OF OPTIMAL CONSTRUCTION OF Ka-BAND COPLANAR PHASE SHIFTER
FOR LMDS PHASED ARRAY ANTENNA.
A. Kozyrev, V. Osadchy, A. Pavlov, M. Gaidukov, A. Gagarin, A. Vishnevetsky, A. Zverev, A.
Fedotov and L.Sengupta* (St. Petersburg Electrotechnical University and *Paratek
Microwave Inc.)

Miscellaneous(17:30 --- 19:00)

29E-OT-1P

DIELECTRIC AND MAGNETIC PROPERTIES OF FERROELECTROMAGNET
Pb(Fe1/3Nb2/3)O3 (PFN) CERAMICS
J. T. Wang and M. Mbonye (Southern University and A&M College)

29E-OT-2P

POLARIZED TRANSMISSION INTENSITY STUDIES OF OFF-ZONE-CENTER TlMeX2
INCOMMENSURATE SEMICONDUCTORS-FERROELECTRICS
N. Mamedov, Y. Shim and N. Yamamoto (University of Osaka Prefecture)

29E-OT-3P

MEMORY EFFECT IN LAYERED SEMICONDUCTOR TlInS2 WITH INCOMMENSURATE
PHASE
R. A. Suleymanov*, T. G. Mammadov*, S. Özdemir** and K. R. Allakhverdiyev*,***(*Azerbaijan National Academy of Sciences, **Middle East Technical University and***Marmara Research Center of TUBITAK)

29E-OT-4P

THERMAL EXPANSION OF LAYERED CRYSTALS TlInS2
N. A. Abdullayev, T. G. Mammadov and R. A. Suleymanov (Azerbaijan National Academy of
Sciences)

29E-OT-5P

ANALYSIS OF THE LATERAL AND SPURIOUS MODES OF PZT/EPOXY 1-3 COMPOSITE
RINGS
C. P. Chong, H. L. W. Chan and P. C. K. Liu* (The Hong Kong Polytechnic University and*ASM Assembly Automation Ltd.)

29E-OT-6P

LOW-FREQUENCY DIELECTRIC DISPERSION IN TRIGLYCINE SULPHATE UNDERMICROWAVE IRRADIATION
G. I. Ovtchinnikova, Y. A. Pirogov and A. N. Soloshenko (Moscow State University)

29E-OT-7P

PECULIARITIES OF RADIOSPECTROSCOPY LINES SHAPE IN NANOMATERIALS
M. D. Glinchuk, A. N. Morozovskaya, A. M. Slipenyuk and I. P. Bykov (NASc of Ukraine)29E-OT-8P

SYNTHESIS OF PLATELET SrTiO3 BY EPITAXIAL GROWTH ON Sr3Ti2O7 CORE
PARTICLES
M. E. Ebrahimi, M. Allahverdi and A. Safari (Rutgers University)

29E-OT-9P

STUDIES OF PROTON IRRADIATED 0.9PMN-0.1PT/P(VDF-TrFE) 0-3 COMPOSITES
K. H. Lam, H. L. W. Chan, C. L. Choy, E. Z. Luo* and I. H. Wilson* (The Hong Kong
Polytechnic University and *The Chinese University of Hong Kong)

29E-OT-10P

THE INFLUENCE OF DEFORMATION ON THE PHASE TRANSITION TEMPERATURES IN
TlInS2 TYPE CRYSTALS.
K. R. Allakhverdiyev* **, T. G. Mammadov*, T. S. Mammadov*, M.-H. Seyidov* and R. A.
Suleymanov* (*Azerbaijan National Academy of Sciences and ** Marmara Research Center
of TUBITAK)

29E-OT-11P

MATLAB AND PSPICE MICRO-MODELING OF PIEZOELECTIC TRANSFORMER FOR
CCFL DRIVE
L. Hwang, J. Yoo, B. Lee, J. Kim, E. Jang, M. Cho*, J. Kim** (Semyung University, *Daewon
Science College and **Samsung Electro-Mechanics co.)29E-OT-12P

A STUDY ON THE T5 FLUORESCENT LAMP BALLAST USING CONTOUR VIBRATION
MODE PIEZOELECTRIC TRANSFORMER USING A ONECHIP MICROCONTROLLER
L. Hwang, J. Yoo, B. Lee, J. Kim, E. Jang, C. Lee*, M. Cho** and J. Kim*** (Semyung
University, *Myongji University, **Daewon Science College and ***Samsung
Electro-Mechanics co.)29E-OT-13P

OPTICAL PROPERTIES OF DOPED-SILICA FILMS PREPARED BY MICROEWAVE
PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
C.-K. Kao, C.-H. Tsai and I.-N. Lin (National Tsing-Hua University)

29E-OT-14P

PROPERTIES OF PZT NANO-POWDER DOPED SILICA FILMS PREPARED BY SOL-GEL
PROCESS
P.-J. Yuen*, J.-S. Kao*,**, C.-H. Tsai* and I.-N. Lin* (*National Tsing-Hua University and**National Science Council)

29E-OT-15P

RELAXATION CHARACTERISTICS OF Ag(Ta,Nb)O3 THIN FILM VARACTORS
J.-H. Koh, A. Lisauskas and A. M. Grishin (Royal Institute of Technology)

29E-OT-16P

VARIABLE EMITTANCE RADIATOR USING METAL INSULATOR PHASE TRANSITION IN
La1-xSrxMnO3
A. Ochi, T. Mori, Y. Shimakawa, Y. Kubo, A. Okamoto*, Y. Nakamura* S. Tachikawa**, A.
Ohnishi** and K. Shimazaki** (NEC Corp., *Mechanical System Department NEC TOSHIBASpace Systems Ltd. and **Institute of Space and Astronautical Science)

29E-OT-17P

CFRP PASSIVE COMPOSITE DAMPER BY USE OF PIEZOELECTRIC POLYMER/CERAMIC
T. Tanimoto (Shonan Institute of Technology)

29E-OT-18P

DYNAMIC AND CONTROL OF COMPOSITE PLATE STRUCTURES CONTAINING
FERROELECTRIC POLYMER LAMINAS. APPLICATION TO ANTIFOULING PROCESS.
M. Rahmoune and M. A. A. Hamdi (Mechanic Research Laboratory)

29E-OT-19P

PREPARATION AND PERFORMANCE OF NiCuZn-Co2Z COMPOSITE FERRITE
W. Qu, X. Wang and L. Li (Tsinghua University)

29E-OT-20P

LIGHT MODULATION PROPERTIES OF NOVEL PIEZOELECTRIC POLYMER
Y. Tajitsu (Yamagata University)

29E-OT-21P

A NOVEL LIQUID DISPENSE DEVICE USING FLUIDIC INERTIA FORCE
S. Takahashi, H, Kitagawa and Y, Tomikawa (Olympus Optical Co., ltd,)Conference Room 4
Domain(17:30 --- 19:00)

29F-DM-1P

TEMPERATURE DEPENDANT DOMAIN STRUCTURES OF LITHIUM NIOBATE SINGLECRYSTALS
D. Xue, R. Jayavel*, K. Terabe*, K. Kurimura* and K. Kitamura (AML/NIMS and*NML/NIMS)

29F-DM-2P

DOMAIN MOTIONS IN EPITAXIAL Pb(Zr,Ti)O3 THIN FILM CAPACITORS BY THE
PIEZORESPONSE IMAGING TECHNIQUE
T. Yagi, H. Fujisawa, M. Shimizu and H. Niu (Himeji Institute of Technology)

29F-DM-3P

DOMAIN STRUCTURE IN CONGRUENT AND STOICHIOMETRIC LITHIUM TANTALATECONTROLLED BY ELECTRIC FIELD
V. Shur, E. Shishkin, E. Nikolaeva, D. Fursov, A. Chernykh, A. Shur,K. Terabe*, S.
Kurimura* and K. Kitamura* (Ural State University and *National Institute for Materials
Science)

29F-DM-4P

INVESTIGATION OF THE INFLUENCE OF A IONIC BOMBARDMENT ON THE DOMAIN
PROPAGATION IN PZT THIN FILMS.
B. Gautier, C. Soyer* , E. Cattan*, J. C. Labrune and D. Remiens* (Université deFranche-Comté and *Université de Valenciennes)

29F-DM-5P

DOMAIN OBSERVATION IN PZN-PT MIXED CRYSTAL
T. Araki, M. Iwata, M. Maeda, I. Suzuki, H. Ohwa*, Y. Yasuda*, H. Orihara** and Y.
Ishibashi*** (Nagoya Institute of Technology, *Gifu University, **Nagoya University and***Aichi Shukutoku University)

29F-DM-6P

BASIC APPROACH TO PERIODICAL AND SELF-ORGANIZED SUBMICRON AND
NANOSCALE DOMAIN PATTERNING IN FERROELECTRICS BY ELECTRICAL POLING
V. Shur (Ural State University)

29F-DM-7P

INVESTIGATION OF DOMAIN STRUCTURE IN MULTILAYER CERAMIC CAPACITORSUSING PIEZORESPONSE FORCE MICROSCOPE
H. Okino, K. Yuzawa and T. Yamamoto (National Defense Academy)

Fundamental, Theory, Model(17:30 --- 19:00)

29F-FD-1P

STRUCTURAL TRANSFORMATION AND PRESSURE-INDUCED PHASE TRANSITION IN
PZTV. Bornand, J. Haines, J. Rouquette, M. Pintard and P. Papet (Laboratoire de Physicochimie
de la Matière Condensée)

29F-FD-2P

A DIFFERENCE-EQUATION BASED MODEL FOR FERROELECTRIC THIN FILMCAPACITORS
Shunming Sun and T. S. Kalkur (University of Colorado)

29F-FD-3P

SIMULATION OF PTCR BEHAVIOUR IN N-DOPED BaTiO3 CERAMICS
L. Mitoseriu*,**, M. Viviani***, D. Ricinschi****, C. Fedor** and P. Nanni* (*Univ. of
Genoa, **"Al. I. Cuza" Univ., ***Via de Marini 6 and ****Osaka Univ.)

29F-FD-4P

PHASE TRANSITION IN LAYERED PEROVSKITES: A MONTE CARLO SIMULATION
C. H. Li, J. S. Zhu, X. M. Lü and Y. N. Wang (Nanjing University)

29F-FD-5P

COMPARISON BETWEEN MASON'S EQUIVALENT CIRCUIT AND COMPLEX SERIESDYNAMICS FROM ENERGETIC POINT OF VIEW
M. Ohki and K. Toda (National Defense Academy)

29F-FD-6P

PROPERTIES OF PROTOTYPE SOLID SOLUTIONS OF KNbO3, KTaO3 AND LiTaO3 ON
THE BASIS OF FIRST-PRINCIPLE COMPUTATIONS AND EXPERIMENTS. A. Prosandeev* **, E. Cockayne*, B. Burton*, V. A. Trepakov*** ****, S. Kapphan***,M. S. Savinov***** and L. Jastrabik***** (*National Institute of Standards and Technology,**Rostov State University, ***University of Osnabruck, ****A. F. Ioffe Physical-TechnicalInstitute and *****Institute of Physics AS CR)

29F-FD-7P

FINITE ELEMENT ANALYSIS OF RESIDUAL STRESS CONTRIBUTION TO DOMAINLOCKING AND STABILITY IN PIEZOELECTRIC THIN FILMS
G. White (NIST)

29F-FD-8P

TERAHERTZ TIME DOMAIN SPECTROSCOPY OF PHONON-POLARITON IN
FERROELECTRIC LITHIUM NIOBATE CRYSTALS
S. kojima (University of Tsukuba)

29F-FD-9P

PIEZOCERAMIC COEFFICIENT HYSTERESIS UNDER HIGH STRESS AND ELECTRICAL
FIELD
E. Boucher, G. Sebald and D. Guyomar (INSA de LYON)

29F-FD-10P

STUDY OF DIPOLE ORDERING IN K1-xLixTa1-yNbyO3 BY RAMAN
P. Galinetto, E. Giulotto, G. Samoggia, V. Trepakov* **, S. Kapphan**, L. Jastrabik*** andL. Boatner**** (Università di Pavia and INFM, **A.F. Ioffe Physical-Technical Institute,***University of Osnabrück, ****Institute of Physics AS CR, ***** Oak Ridge Nat. Lab.)

29F-FD-11P

THE EFFECTS INDUCED BY POLING IN A PZT MATERIAL
M. Popa and M. Kakihana (Tokyo Institute of Technology)

29F-FD-12P

STRUCTURAL CHARACTERIZATION OF A LEAD ZIRCONATE MATERIAL OBTAINED BY
A WET CHEMICAL ROUTE
M. Popa, E. R. Camargo, J. Frantti and M. Kakihana (Tokyo Institute of Technology)

29F-FD-13P

KINETICS OF FATIGUE AND REJUVENATION EFFECTS IN BULK CERAMICS ANDSINGLE CRYSTALS
V. Shur, I. Baturin, E. Rumyantsev, E. Nikolaeva, E. Shishkin, A. Shur, D. Lupascu*, J.
Nuffer*, C. Randall**, and M.Ozgul** (Ural State University, *Darmstadt University ofTechnology and **The Pennsylvania State University)

29F-FD-14P

COMPUTER SIMULATION OF P-E HYSTERESIS OF FERROELECTRICS
Y. Kubota, H. Kakemoto, S. Wada and T. Tsurumi (Tokyo Institute of Technology)

29F-FD-15P

FERROELECTRIC PHASE TRANSITION IN Bi-LAYERED SrBi2Ta2O9
H. Yamashita, K. Yoshio, W. Murata and A. Onodera (Hokkai-Gakuen University)

29F-FD-16P

ELECTRICAL CONDUCTION MECHANISM IN Bi4Ti3O12
M. Takahashi, Y. Noguchi and M. Miyayama (University of Tokyo)

29F-FD-17P

DIELECTRIC RESPONSE IN MICROSCOPICALLY NONUNIFORM MEDIA: KTa1-xNbx O3
AND K1-xLixTaO3.
S. A. Prosandeev*,**, V. A. Trepakov***,****, S. E. Kapphan**** and L. Jastrabik*****(*National Institute of Standards and Technology, ** Rostov State University, ***Universityof Osnabrück, ****A. F. Ioffe Physical-Technical Institute and ****Institute of Physics AS CR)

29F-FD-18P

MONTE CARLO SIMULATION OF FERROELECTRIC PROPERTIES
D. Bolten, U. Böttger and R. Waser (Univ. of Aachen)

29F-FD-19P

OPTICAL OBSERVATION FOR DOMAIN STRUCTURES AND DIELECTRIC
MEASUREMENT IN RELAXOR FERROELECTRICS PZN-PT NEAR MORPHOTROPIC
K. Fujita, N. Yasuda*, H. Ohwa*, M. Iwata**, H. Orihara*** and Y. IshibashI**** (Gifu
National College of Technology, *Gifu University, **Nagoya Institute of Technology,***Nagoya University and ****Aichi Shukutoku University)

29F-FD-20P

MORPHOTROPIC PHASE BOUNDARIES IN PEROVSKITE SOLID SOLUTIONS
E. F. Alberta, R. Guo and A. S. Bhalla (The Pennsylvania State Univ.)

29F-FD-21P

HYDROGEN BONDS AND PROTON TRANSFER IN FERROELECTRICS AND RELATEDMATERIALS (MOLECULAR CHAINS, PROTEINS, DNA): Ab initio GAUSSIAN-98
CALCULATIONS AND SOLITON MODELS
V. Bystrov, M. Green*, A. Sapronova, G. Ovtchinnikova, T. Tazieva, A. Soloshenko, M.
Shaiko and B. Zapol** (Institute of Mathematical Problems of Biology Russian Academy of
Sciences, *City College of City University of New York and **University of Latvia)

29F-FD-22P

SITE OCCUPATION AND DIELECTRIC CHARACTERISTICS OF STRONTIUM BARIUM
NIOBATE CERAMICS: Sr/Ba RATIO DEPENDENCE
M.-S. Kim, J.-H. Lee, J.-J. Kim, H. Y. Lee* and S.-H. Cho (Kyungpook National University
and *Yeongnam University)

29F-FD-23P

MONTE CARLO SIMULATION OF ATOMIC ORDERING IN(1-x)A(BⅡ1/3BV2/3)O3-xABⅥO3 TYPE RELAXOR FERROELECTRICS
J. S. Liu, X. W. Zhang, Z. R. Liu, B. L. Gu and W. H. Duan (Tsinghua University)

29F-FD-24P

MODELING AND MONTE CARLO SIMULATION OF INTRINSIC FERROELECTRIC
SWITCHING BAHAVIOR IN BARIUM TITANATE
J. S. Liu and Y. N. Wang* (Tsinghua University and *Nanjing Uiversity)

29F-FD-25P

OCTAHEDRAL TILTING DOMAIN BOUNDARY IN CALCIUM-MODIFIED LEAD TIAANATECERAMIC
C.-C. Chou, I..-W. Su and D.-S. Tsai (National Taiwan University)

Reception Hall
Characterization - except SPM(17:30 --- 19:00)

29G-CE-1P

THE EFFECT OF DIFFERENT DOPANTS ON DIFFUSE PHASE TRANSITION AND
ORDERING DEGREE IN PMN
C. Feng, Y. Yang and Y. Yu (Chinese Academy of Sciences)

29G-CE-2P

MECHANICAL AGING BEHAVIOR OF Pb(Zn1/3Nb2/3)O3-PbTiO3 AND
Pb(Mg1/3Nb2/3)O3-PbTiO3 SINGLE CRYSTALS
S. Priya and K. Uchino (Pennsylvania State University)

29G-CE-3P

CHARACTERISATION OF THE DIRECT PIEZOELECTRIC COEFFICIENT OF THIN FILMS
VIA A MODIFIED BERLINCOURT METHOD
M. G. Cain and M. Stewart (National Physical Laboratory)

29G-CE-4P

INTERNATIONAL INTERCOMPARISON OF DIRECT PIEZOELECTRIC COEFFICIENT USING
THE BERLINCOURT METHOD
M. G. Cain, M. Stewart and M. Lodeiro (National Physical Laboratory)

29G-CE-5P

MEASUREMENT METHOD FOR THE CHARACTERISATION OF THE NON-LINEARBLOCKING FORCE IN PIEZOELECTRIC ACTUATORS
M. G. Cain and M. Stewart (National Physical Laboratory)

29G-CE-6P

RELAXOR BEHAVIOUR AND POLARIZATION RESPONSE OF PROTON IRRADIATED BST/ P(VDF-TrFE) COMPOSITES
S. U. Adikary, H. L. W. Chan, C. L. Choy, B. Sundarvel* and I. H. Wilson* (The Hong Kong
Polytechnic University and *The Chinese University of Hong Kong)

29G-CE-7P

IN SITU TRANSMISSION ELECTRON MICROSCOPY STUDY OF ELECTRIC
FIELD-INDUCED MICROSCRACKING IN Pb(Mg1/3 Nb2/3)O3 -PbTiO3 SINGLE
Z. Xu, X. Tan and J. K. Shang (City University of Hong Kong, University of Illinois at
Urbana-Champaign)

29G-CE-8P

A MEASUREMENT TECHNIQUE FOR MECHANICAL VIBRATION USING A
THICKNESS-MODE PIEZOELECTRIC TRANSDUCER WITH TWO COMB-SHAPED
T. Fujita, T. Hashimoto and K. Toda (National Defense Academy)

29G-CE-9P

LOCALIZED ELECTROMECHANICAL PROPERTIES OF PZT THIN FILMS MEASURED BYNANOINDENTATION
P. Hvizdos, M. J. Reece, A. J. Bushby, R. W. Whatmore, Q. Zhang and M. Alguero (Universityof London)

29G-CE-10P

MEASUREMENT OF DIELECTRIC PROPERTY BY EVANESCENT MICROWAVE SCOPE
Y.-C. Chen, H.-F. Cheng, C.-M. Lei* and I.-N. Lin* (National Taiwan Normal University and*National Tsing-Hua University)29G-CE-11P

ELECTROMECHANICAL CHARACTERIZATION OF THICK PT AND PZT FILMS
L. Simon and P. Gonnard (Institut National des Sciences Appliquées de Lyon Bâtiment
Gustave Ferrié)

29G-CE-12P

DETECTION OF HYDROGEN IN FERROELECTRIC THIN FILMS USING ELASTIC RECOIL
DETECTION ANALYSIS
T. Kaneko, M. Watamori and G. Kano (Kochi University of Technology)

29G-CE-13P

PHASE TRANSITIONS IN PZT CERAMICS PREPARED BY DIFFERENT TECHNIQUES
A. Deineka, L. Jastrabik, G. Suchaneck* and G. Gerlach* (Academy of Sciences of the Czech
Republic and * Dresden University of Technology)

29G-CE-14P

ESR INVESTIGATION OF NANOSIZE POWDERS OF BARIUM TITANATE
I.. P. Bykov, A. M. Slipenyuk, M. D. Glinchuk, A. N. Morozovskaya, A. V. Ragulya, A. V.
Polotai, V. P. Klimenko, V. V. Skorokhod and C. A. Randall* (NASc of Ukraine and*Pennsylvania State University)

29G-CE-15P

ESR INVESTIGATION OF MIXED FERROELECTRIC RELAXOR SYSTEM PZ/PT/PNN
I.. P. Bykov, A. M. Slipenyuk, L. P. Yurchenko, M. D. Glinchuk, G. Robert* and L.
Jastrabik** (NASc of Ukraine, * Swiss Federal Institute of Technology and ** Academy of
Science of the Czech Republic)

29G-CE-16P

SPECTRAL ANALYSIS OF THE ELECTROMECHANICAL RESPONSE OF AN
ELECTROACTIVE MATERIAL BY IMPLEMENTATION OF FOURIER DECOMPOSITION
C. B. DiAntonio, F. A. Williams Jr., S. M. Pilgrim and W. A. Schulze (Alfred University)

29G-CE-17P

PECULIARITIES OF INCOMMENSURATE PHASE IN
FERROELECTRICS-SEMICONDUCTORS TlInS2 AND TlGaSe2
B. R. Gadjiev and A. I. Beskrovniy (Frank Laboratory of Neutron physics)

29G-CE-18P

STUDIES OF DIELECTRIC PROPERTIES AND CRYSTALLIZATION IN AMORPHOUS
Bi4Ti3O12
M.Takashige, S. Hamazaki, M. Kokubun, Y. Haga*, T. Yamaguchi* and M.-S. Jang* (Iwaki
Meisei University,*Meisei University and **Pusan National University)

29G-CE-19P

EVALUATION METHOD OF LONGITUDINAL AND TRANSVERSE PIEZOELECTRIC
D-COEFFICIENTS FOR THIN FILMS
D. Kim* and H.-G. Kim (Korea Advanced Institute of Science and Technology and * PiezoLabCo., Ltd.)

29G-CE-20P

ECHO CANCELLING IN ULTRASONIC RANGING USING ARTIFICIAL NEURAL NETWORK
H. Monsef and R. K. Moridifar* (University of Tehran and *Matn Niroo Co.)

29G-CE-21P

MEASUREMENT OF MICROWAVE DIELECTRIC SPECTRA OF BaTiO3 - BaZrO3
CERAMICS USING IMPEDANCE ANALYZER AND 3D ELECTROMAGNETIC FIELD
H. Kakemoto, S. Wada and T. Tsurumi (Tokyo Institute of Technology)

29G-CE-22P

THE DESIGN SIMULATION FOR MANUFACTURE OF HIGH FREQUENCY CERAMIC
S. H. Lee, J. Y. Seok, S. J. Ha, J. H. Yoo*, S. K. Min* and G. Sa-Gong** (Kyung Book
National University, *Se Myung University and **Dong A University)

29G-CE-23P

STRUCTURE AND DIELECTRIC PROPERTIES OF NICKEL OR LANTHANUM/CHROMIUMDOPED BARIUM TITANATE CERAMICS
M. Fukunaga, Y. Uesu and K. Kohn (Waseda University)

29G-CE-24P

PIEZOELECTRIC COEFFICIENTS OF PZT THIN FILMS
R. C. W. Tsang, K. W. Kwok, H. L. W. Chan and C. L. Choy (The Hong Kong Polytechnic
University)

29G-CE-25P

DOMAIN PATTERNING IN LITHIUM NIOBATE: ANALYSIS OF SWITCHING CURRENT
V. Shur, E. Nikolaeva, E. Rumyantsev, E. Shishkin, V. Kozhevnikov, G. Miller*, R. Batchko*,
M. Fejer* and R. Byer* (Ural State University and *Stanford University)29G-CE-26P

SEARCH FOR RELAXOR - BEHAVIORS IN FERROELECTRIC - ANTIFERROELECTRICMIXED CRYSTALS
E. Matsushita and K. Takahashi (Gifu University)

29G-CE-27P

FERROELECTRIC AND MAGNETIC PROPERTIES OF Ta2O5-DOPED PrFeO3-PbTiO3
AND BiFeO3-PbTiO3 CERAMICS
J. S. Kim, C.-I. Cheon, Y. N. Choi and P. W. Jang* (Hoseo University and *KAERI)

29G-CE-28P

A STUDY ON ELECTROSTRICTION AND RESIDUAL STRESS OF HIGH CAPACITANCE
MULTILAYER CERAMIC CAPACITORS(MLCS)
Y. Nakano, K. Horino, T. Nomura and T. Takenaka* (TDK corporation and *Science
University of Tokyo)

29G-CE-29P

EFFECT OF COOLING RATE ON LOSS QUALITY OF (Zr0.8Sn0.2)TiO4 CERAMICS
WITH ADDITIVES
E. S. Kim (Kyonggi University)

29G-CE-30P

ION DOPING EFFECTS IN Bi-LAYERED FERROELECTRIC CERAMICS AND THIN FILMS
T. K. Song, J. S. Kim, J. K. Kim, B. S. Kim, S. S. Kim and M. H. Kim (Changwon National
University)

29G-CE-31P

MICROWAVE DIELECTRIC SPECTROSCOPY OF FERROELECTRIC THIN FILMS
B. Kim, M. Jeong, S. Baik, V. Kazmirenko* and Y. Poplavko* (POSTECH and *National
Technical University of Ukraine)

29G-CE-32P

NANOCRYSTALLINE BaTiO3-CERAMICS PREPARED VIA MICROEMULSION SYNTHESIS:POWDER CHARACTERISTICS AND CONSOLIDATION BEHAVIOUR
C. Pithan, F.-H. Haegel*, J. Dornseiffer* and R. Waser (Institute for Electroceramic Materials
and * Institute of Applied Physical Chemistry)

29G-CE-33P

LUMINESCENCE FROM FLUORESCENT MATERIAL EXCITED BY PIEZOELECTRIC
TRANSFORMER
K. Teranishi, S. Suzuki and H. Itoh (Chiba Institute of Technology)

29G-CE-34P

BROADBAND MICROWAVE PROBE FOR NONDESTRUCTIVE TEST OF FERROELECTRIC
COATINGS
A. M. Grishin and V. P. Denysenkov (Royal Institute of Technology)

29G-CE-35P

MEASUREMENTS OF FERROELECTRIC FILMS PARAMETERS AT K-V-BAND.
A. Kozyrev, M. Gaidukov, V. Keis, A. Gagarin, I. Kotelnikov and L. Sengupta* (St.
Petersburg Electrotechnical University and *Paratek Microwave Inc.)

29G-CE-36P

CANLIBRATION OF PZT CANTILEVER USING INTEGRATED PIEZORESISTIVE SENSOR
IN HIGH SPEED ATOMIC FORCE MICROSCOPY
H.-J. Nam, Y.-S. Kim, S.-M. Cho, D.-C. Kim and J.-U. Bu (LG Corporate Institute ofTechnology)

29G-CE-37P

SIZE EFFECT ON PHASE TRANSITIONS OF BARIUM TITANATE STUDIED BY
DIELECTRIC AND RAMAN SCATTERING METHODS
T.-L. Ren, X.-H. Wang, L.-T. Liu, Z.-J. Li, P.-L. Zhang* and W.-L. Zhong* (Tsinghua
University and *.Shandong University)

29G-CE-38P

INVESTIGATION OF DEGRADATION MECHANISM ON PZT THIN FILMS BY TSC METHOD
T. Nishida, M. Matsuoka, I. Kawakami and T. Shiosaki (Nara Institute of Science andTechnology (NAIST))

Characterization - SPM (17:30 --- 19:00)
29G-CP-1P

QUANTITATIVE MEASUREMENT OF DIELECTRIC PROPERTIES USING SCANNINGNONLINEAR DIELECTRIC MICROSCOPY WITH ELECTRO-CONDUCTIVE CANTILEVER
K. Ohara and Y. Cho (Tohoku University)29G-CP-2P

INVESTIGATON OF DOMAIN SWITCHING AND RETENTION IN ORIENTED
PbZr0.3Ti0.7O3 THIN FILM BY SCANNING FORCE MICROSCOPY
D. Fu*,**, K. Kato**, M. Minakata* and H. Suzuki* (*Shizuoka University and **National
Institute of Advanced Industrial Science and Technology)

29G-CP-3P

TIP EFFECTS OF PIEZOELECTRIC-MODE ATOMIC FORCE MICROSCOPE FOR LOCALPIEZOELECTRIC MEASUREMENTS
G. Hu, T. Tang and J. Xu* (Fudan University and *the Chinese University of Hong Kong)

29G-CP-4P

DOMAIN AND PIEZO IMAGES OF PZT FAMILY THIN FILMS
Y. Masuda, K. Kakimoto*, H. Kakemoto** and K. Watanabe*** (Hachinohe Instutute ofTechnology, *Nagoya, Institute of Technology, **Tokyo Institute of Technology and ***Seiko
Instrument company)

29G-CP-5P

QUANTITATIVE MEASUREMENTS OF PIEZOELECTRIC COEFFICIENTS OF THIN FILMS
USING AFM PIEZORESPONSE MODE.
B. Gautier, S. Ballandras*, V. B. Patissier*, W. Daniau*, D. Hauden* and J. C. Labrune(Université de Franche-Comté and *Université de Franche Comté)

29G-CP-6P

DETAILED SCANNING FORCE MICROSCOPY STUDY OF SEPARETED NANOSIZEDFERROELECTRIC GRAINS USING VARIOUS SCANNING MODES
A. Roelofs*, T. Schneller*, C. Szot** and R. Waser** (*IWE II and **IFF)

29G-CP-7P

NANOSCALE SPATIAL CORRELATION OF DYNAMICAL PIEZOELECTRIC DISPLACEMENTHYSTERESIS LOOPS OF PZT FILMS IN THE FRESH AND FATIGUED STATES
D. Ricinschi and M. Okuyama (Osaka Univ.)

29G-CP-8P

DETERMINATION OF SCALING ISSUES IN VERY THIN PZT FILM UTILIZING KFM
D. Jang, J. Heo, I. Yi* and I. Chung (SungKyunKwan University and *Osaka University)

GalleryThin film - Fabrication - Pb system (I)(17:30 --- 19:00)

29H-TP1-1P

PROPERTIES OF LEAD TITANATE THIN FILMS
Z. Kighelman, D. Damjanovic, M. Cantoni and N. Setter (Swiss Federal Institute ofTechnology – EPFL)

29H-TP1-2P

MATERIAL PROPERTIES OF AN EPITAXIAL PZT FILM ON AN EPITAXIAL Ir/ZrN/(100)Si
SUBSTRATE FOR FERROELECTRIC MEMORY
S. Horita, T. Toda and H. Kasagawa (Japan Advanced Institute of Science and Technology)

29H-TP1-3P

MULTI-LAYER FERROELECTRIC Pb(Zr0.52Ti0.48)O3 THICK FILMS PREPARED BY
PULSED LASER DEPOSITION PROCESS
H.-F. Cheng, C.-S. Lin* and I.-N. Lin* (National Taiwan Normal University and *National
Tsing-Hua University)

29H-TP1-4P

DOMAIN STRUCTURE OF EPITAXIAL PbTiO3 THIN FILMS ON Pt(001)/MgO(001)
SUBSTRATES
Y. K. Kim, K. H. Ahn, K. Lee and S. Baik (Pohang University of Science and Technology)

29H-TP1-5P

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF (Pb,La)(Zr, Ti)O3 FILMS
CRYSTALLIZED BY ONE-STEP POSTDEPOSITION ANNEALING USING PLZT SEEDLAYER AND CHEMICAL OXIDATION TREATMENT
R. Wakabayashi, M. Kobune, T. Sawada, S. Kojima and T. Sekino* (Himeji Institute ofTechnology and *Osaka University)

29H-TP1-6P

FERROELECTRIC PROPERTIES OF PbZr0.4Ti0.6O3 FILM ON La1/2Sr1/2CoO3ELECTRODE
J.-H. Kim, H. S. Kim, W. K. Choo, B. J. Kuh, K. V. Im and S. H. Park* (Korea Advanced
Institute of Science and Technology and *Samsung electronics Co.)

29H-TP1-7P

FERROELECTRICITY OF RARE EARTH Eu DOPED Pb(ZrxTi1-x)O3 THIN FILMS BY A
SOL-GEL METHOD
Y. J. Yu* **, H. L.W. Chan**, F. P. Wang*, C. L. Choy**, L. C. Zhao* (* Harbin Institute ofTechnology and ** the Hong Kong Polytechnic University)

29H-TP1-8P

FABRICATION OF MULTILAYER RING TRANSFORMER
N. Y. Wong, H. L. W. Chan and C. L. Choy (The Hong Kong Polytechnic University)

29H-TP1-9P

STRUCTURE CONTROL OF FERROELECTRIC PbTiO3 THIN FILMS USING SrTiO3
BUFFER LAYER PREPARED BY METALORGANIC DECOMPOSITION
K. Kimura, K. M. A. Salam, H. Fukuda and S. Nomura (Muroran Institute of Technology)

29H-TP1-10P

THE GRAIN BOUNDARY EFFECT ON THE HYDROGEN-INDUCED DEGRADATION IN
LEAD ZIRCONATE TITANATE THIN FILMS
J.-S. Lee, J.-H. Park, J.-I. Yun and S.-K. Joo (Seoul National University)

29H-TP1-11P

NUCLEATION AND GROWTH CONTROL IN PZT THIN FILMS BY SCANNING-RAPID
THERMAL ANNEALING PROCESS
J.-S. Lee, J.-H. Park, J.-I. Yun and S.-K. Joo (Seoul National University)

29H-TP1-12P

LOW TEMPERATURE CRYSTALLIZATION OF LEAD ZIRCONATE TITANATE THIN FILMS
BY ION DAMAGED SEED LAYER
J.-H. Park, J.-S. Lee, J.-I. Yun and S.-K. Joo (Seoul National University)

29H-TP1-13P

CHRACTERZATION OF PZT CAPACITORS WITH Ir ELECTRODES SUCCESSIVELYPREPARED BY MOCVDK. Kita, H. Fujisawa, M. Shimizu and H. Niu (Himeji Institute of Technology)

29H-TP1-14P

CRYSTALLINE AND FERROELECTRIC PROPERTIES OF LOW TEMPERATURE GROWN
PbZrxTi1-xO3 THIN FILMS BY METALORGANIC CHEMICAL VAPOR DEPOSITION
M. Okaniwa, H. Fujisawa, M. Shimizu and H. Niu (Himeji Institute of Technology)

29H-TP1-15P

LOW TEMPERATURE DEPOSITON OF Pb(Zr,Ti)O3 THIN FILMS ON AMORPHOUS
Pb(Zr,Ti)O3 INTERMEDIATE LAYER BY RF SPUTTERING
S. Mochizuki, R. Thomas, T. Mihara and T. Ishida (National Institute of Advanced Industrial
Science and Technology)

29H-TP1-16P

EFFECTS OF SOL-GEL DERIVED SEED LAYERS ON THE CHARACTERISTICS OF RF
SPUTTERED PZT THIN FILMS USING EXCESS PbO DOPED Pb(Zr0.5,Ti0.5)O3
CERAMIC TARGET
R. Thomas, S. Mochizuki, T. Mihara and T. Ishida (AIST Kansai National Institute)

29H-TP1-17P

FABRICATION OF A CANTILEVER STRUCTURE FOR PIEZOELECTRIC MICROPHONE
AND MICROSPEAKER
L.-T. Zhang, T.-L. Ren, J.-S. Liu, L.-T. Liu and Z.-J. Li (Tsinghua University)

29H-TP1-18P

HIGH QUALITY FERROELECTRIC CAPACITOR FOR FERAM APPLICATIONS
T.-L. Ren, L.-T. Zhang, J.-S. Liu, L.-T. Liu and Z.-J. Li (Tsinghua University)

29H-TP1-19P

STRUCTURE AND FERROELECTRIC PROPERTIES OF SUPERLATTICES PT/PLTEPITAXIALLY GROWN ON MgO AND SrTiO3
C. Endo, R. Ai, K. Wasa , T. Matsuda, A. Unno, H. Okino* and T. Yamamoto* (Yokohama
City University and *The National Defense Academy)

29H-TP1-20P

EFFECT OF RTA ON THE PROPERTIES OF PZT THIN FILMS MADE BY LOWTEMPERATURE MOCVD
S.-I. Kim and C.-H. Lee (Keimyung University)

29H-TP1-21P

THICKNESS DEPENDENCE OF THE ELECTRICAL AND ELECTROMECHANICALPROPERTIES OF PZT THIN FILMS
H. Maiwa and N. Ichinose* (Shonan Institute of Technology and *Waseda University)

29H-TP1-22P

CHARACTERISTICS OF FERROELECTRIC Pb(Zr1-xTix)O3 THIN FILM CAPACITORSDEPOSITED ON PtRhOy ELECTRODE BARRIERS
K. Lee, K. H. Lee and B. K. Ju (Sangji University)29H-TP1-23P

WIDE PROCESS WINDOW OF LOW-TEMPERATURE-DEPOSITED Pb(Zr,Ti)O3 FILMS BY
PULSED-MOCVD
G. Asano, T. Oikawa, K. Okada and H. Funakubo (Tokyo Institute of Technology)

29H-TP1-24P

LOW-LEAKAGE EPITAXIAL PZT THIN FILM GROWN ON Ir/MgO SUBSTRATE BYMETALORGANIC CHEMICAL VAPOR DEPOSITION
T. Oikawa, K. Takahashi, J. Ishida*, Y. Ichikawa**, T. Ochiai**, K. Saito***, A. Sawabe*and H. Funakubo (Tokyo Institute of Technology, *Aoyama Gakuin University, **TOYOCorporation and ***Philips Japan, Ltd.)

29H-TP1-25P

COMPOSITION AND ORIENTATION DEPENDENCES OF DIELECTRIC ANDFERROELECTRIC PROPERITIES OF EPITAXIAL PZT THIN FILMS GROWN BY
METALORGANIC CHEMICAL VAPOR DEPISITION
T. Oikawa K. Saito* and H. Funakubo (Tokyo Institute of Technology and *Philips Japan,
Ltd.)

29H-TP1-26P

FABRICATION OF SONIC SENSORS USING PZT THIN FILM ON Si DIAPHRAGM AND
CANTILEVER
S. Murakami, K. Inoue, Y. Suzuki, S. Takamatsu*, T. Kitano*, M. Kinoshita*, K. Yamashita**and M Okuyama** (Technology Research Institute of Osaka Prefecture, *Hitachi Zosen
Corporation and **Osaka University)

29H-TP1-27P

FAST DEPOSITION OF LEAD-ZIRCONATE-TITANATE THICK FILMS BY ARCDISCHARGED REACTIVE ION-PLATING METHOD
M. Akamatsu, M. Tani and Y. Yasuda (Stanley Electric Co.)

29H-TP1-28P

EFFECT OF INTERFACE ON ELECTRICAL PROPERTIES OF THIN Pb(Zr,Ti)O3 FILMS
Y. K. Lee, J. K. Lee and Y. S. Park (Samsung Advanced Institute of Technology P.O.)

29H-TP1-29P

POWDER PREPARATION FOR Pb(Zr0.52,Ti0.48)O3 THICK FILMS FORMED BY
AEROSOL DEPOSITION METHOD
J. Akedo and M. Lebedev (AIST)

29H-TP1-30P

LOW TEMPERATURE DEPOSITION OF FERROELECTRIC Pb(Zr,Ti)O3 THIN FILMS ON Ir
ELECTRODE BARRIERS
K. H. Lee, D. H. Park and K. Lee (Sangji University)

29H-TP1-31P

MICROPATTERNING OF FERROELECTRIC Pb(Zr0.3Ti0.7)O3 BY
PHOTOLITHOGRAPHY AND SOL-GEL PROCESSING
Q. Zhang and R. Whatmore (Cranfield University)

29H-TP1-32P

UNIFORMITY OF PZT THIN FILMS PREPARED BY MOCVD ON 8”φ SUBSTRATE
T. Masuda, M. Kajinuma, T. Yamada, H. Uchida, M. Uematsu, K. Suu and M. Ishikawa(ULVAC, Inc)

29H-TP1-33P

FABRICATION OF FERROELECTRIC MICRO-CAPACITORS WITH SELF-ALIGNED TOP
ELECTRODES BY ELECTRON-BEAM-INDUCED PATTERNING PROCESS
S. Okamura, K. Suzuki, R. Takeuchi, T. Maekawa and T. Shiosaki (NAIST)

29H-TP1-34P

FABRICATION OF (001) ORIENTATED PZT THIN FILMS FOR MEMS APPLICATIONS
H.-J. Zhao, T.-L. Ren, J.-S. Liu, L.-T. Liu and Z.-J. Li (Tsinghua University)

29H-TP1-35P

EPITAXIAL GROWTH AND ELECTRICAL PROPERTIES OF Pb(Zr,Ti)O3 THIN FILMS ON
SrTiO3(100) WITH AN ATOMICALLY FLAT SURFACE BY METALORGANIC CHEMICALVAPOR DEPOSITION
H.Nonomura, H.Fujisawa, M.Shimizu and H.Niu (Himeji Institute of Technology)

29H-TP1-36P

PIEZOELECTRIC AND FERROELECTRIC PROPERTIES OF Pb(Zr,Ti)O3 FILMS FOR MEMSAPPLICATIONS
C.-Y. Koo, S.-H. Kim, D.-S. Lee, H.-J. Woo, D. Y. Park, J. Yang and J. Ha and C. S. Hwang*(INOSTEK Inc and *Seoul National University)

29H-TP1-37P

GROWTH STAGES OF SOL-GEL DERIVED PZT(30/70) ON Pt/Ti/SiO2 AS SHOWN BY
SPM (PFM AND TOPOGRAPHY)
S. Dunn, Q. Zhang and R. W. Whatmore (Cranfield University)29H-TP1-38P

PREPARATION OF ELECTRICALLY STABLE Pb(Zr, Ti)O3 THIN FILMS BY THE CSD
METHOD WHITH A THICKNESS DOWN TO 50 nm
U. Ellerkmann*, T. Schneller*, U. Böttger* and R. Waser*,** (*RWTH Aachen and**Forschungszentrum Jülich)

29H-TP1-39P

CHARACTERIZATION OF THE RESIDUAL STRESS IN TITANIUM/PLATINUM AND
TANTALUM/PLATINUM THIN FILM ELECTRODES USED IN THE PROCESSING OF PZTMEMS DEVICES
R. G. Polcawich, J. P. Clarkson, J. Pulskamp, A. Wickenden, M. Wood, M. Ervin, K. Kirchnerand M. Dubey (Army Research Laboratory)

29H-TP1-40P

STRUCTURAL PROPERTIES OF PZT SYSTEM FILM IN USE OF PULSED-LASERABRATION DEPOSITION
M. Ichiki, L. Zhang, Z. Wang* and R. Maeda (National Institute of Advanced Industrial
Science and Technology and *Tohoku University)

29H-TP1-41P

GROWTH OF NIOBIUM DOPED PbZr0.52Ti0.48 (PNZT) FILMS FOR FABRCATION OFA GYROSCOPE
S. Kotru, P. Padmini, C. Nistorica and R. K. Pandey (The University of Alabama)

29H-TP1-42P

A COMPARISON OF RHOMBOHEDRAL AND TETRAGONAL PZT FOR FERAMAPPLICATIONS
A. I. Kingon, A. Gruverman, B. Rodriguez* and J.-P. Maria (North Carolina State University)

29H-TP1-43P

PREPARATION OF PLZT FERROELECTRIC FILMS BY RF SPUTTERING ON 200mmφ
SUBSTRATE
S. Kikuchi, Y. Miyaguchi, T. Jimbo, I. Kimura, M. Tanimura, K. Suu and M. Ishikawa(Institute for Semiconductor Technologies)

29H-TP1-44P

LOW TEMPERATURE OF Pb(Zr,Ti)O3 THIN FILM BY LIQUID DELIVERY MOCVD
M. Miyake, Y. Ueda, S. Okamura and T. Shiosaki (Nara Institute of Science and Technology(NAIST))

29H-TP1-45P

Pb(Zr,Ti)O3 THIN FILMS DEPOSITED BY LIQUID DELIVERY MOCVD USING A SINGLE
COCKTAIL SOLUTION WITH Pb(METHD)2, Zr(METHD)4 and Ti(MPD)(METHD)2
Y. Otani, Y. Ueda, M. Miyake, S. Okamura and T. Shiosaki (Nara Institute of Science andTechnology (NAIST))

29H-TP1-46P

DEPENDENCE ON REACTOR PRESSURES OF Pb(Zr,Ti)O3 FILMS BY LIQUID DELIVERY
MOCVD
Y. Ueda, M. Miyake, S. Okamura and T. Shiosaki (Nara Institute of Science and Technology(NAIST))

29H-TP1-47P

STUDY OF THICKNESS DEPENDENCE ON ELECTRICAL PROPERTIES OF (Pb,La)TiO3
THIN FILMS FOR MEMORY APPLICATIONS
P. Venkateswarlu*,**, P. Victor* and S. B. Krupanidhi* (*Indian Institute of Science and**ISRO Satellite Center)

29H-TP1-48P

ALTERNATING CURRENT CONDUCTION AND IMPEDANCE SPECTROSCOPY ANALYSIS
ON PULSED EXCIMER LASER ABLATED (Pb, La)TiO3 THIN FILMS
P. Venkateswarlu*,**, P. Victor* and S. B. Krupanidhi* (*Indian Institute of Science and**ISRO Satellite Center)

29H-TP1-49P

STUDY OF RELAXOR BEHAVIOR IN PbMg1/3Nb2/3O3-PbTiO3 THIN FILMSGROWN USING PULSED EXCIMER LASER ABLATION TECHNIQUE
A. Laha, P. Victor and S. B. Krupanidhi (Indian Institute of Science)

29H-TP1-50P

DEPOSITION OF THIN FILM PZT AND CONSTITUENT OXIDES: CHEMISTRY, PROCESS,AND FILM CHARACTERISTICS
B. C. Hendrix, I.-S. Chen, S. M. Bilodeau, Z. Wang, C. Xu, T. H. Baum and J. F. Roeder(ATMI, Inc.)

29H-TP1-51P

LOW-TEMPERATURE PREPARATION OF PbZrTiO3/Pt/TiNi/Si HETEROSTRUCTURE BY
LASER ANNEALING
H.-C. Pan, H.-L. Tsai and C.-C. Chou (National Taiwan University)29H-TP1-52P

ELECTRICAL PROPERTIES OF FERROELECTRIC PbSrTiO3 FILMS ON STAINLESS STEELSUBSTRATES WITH LaSrMnO3 BUFFER LAYERS
H.-C. Pan and C.-C. Chou (National Taiwan University)

5/30 (Thu.)
Oral
Noh Theatre
Thin Films (IV) (9:00 --- 10:30)
30A-TF4-1IN
9:00<INVITED> DOMAIN STRUCTURES IN EPITAXIAL PZT THIN FILMS
S. Baik (POSTECH)

30A-TF4-2C
9:30

ELECTRICAL PROPERTIES OF EPITAXIAL (Pb,Sr)TiO3 THIN FILMS PREPARED BY RFMAGNETRON SPUTTERING
J. Du, T. KARAKI, T. Fujii and M. Adachi (Toyama Prefectural University)

30A-TF4-3C
9:45

FERROELECTRIC PROPERTY OF PZT(001) THIN FILM DEPOSITED ON EPITAXIAL(Ni,Zn,Fe)Fe2O4(111) THIN FILM FOR NOVEL FERROELECTRIC/FERROMAGNETICMEMORY APPLICATIONS
N. Wakiya, K. Shinozaki and N. Mizutani (Tokyo Institute of Technology)

30A-TF4-4C
10:00

CRYSTALLIZATION OF ZIRCONIUM-RICH PLZT THIN FILMS BELOW 500 oC
M. Mandeljc, B. Malič, M. Kosec and G. Dražič (Jožef Stefan Institute)

30A-TF4-5C
10:15

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF PZT THIN FILMS DEPOSITEDBY LASER ABLATION ON TEMPLATE LAYER
Z. J. Wang, H. Kokawa and R. Maeda* (Tohoku University and *National Institute ofAdvanced Science and Technology)

Thin Films (V) (11:00 --- 12:30)
30A-TF5-1C
11:00

THE PROPERTIES OF MULTI-LAYERED Pt/(Ba0.5Sr0.5)TiO3/
Pb(Zr0.52Ti0.48)O3/(Ba0.5Sr0.5)TiO3/Pt THIN FILMS
F. Yan, P. Bao, J. Zhu and Y. Wang (Nanjing University)

30A-TF5-2C
11:15

THE INFLUENCE OF BOTTOM ELECTRODES AND SEED ISLANDS ON THE EPITAXIALGROWTH CHARACTERISTICS OF SBT THIN FILMS
S.-Y. Jung, W.-C. Kwak, G. M. A. Kumar, Y.-M. Sung and S.-J. Hwang (Daejin University)

30A-TF5-3C
11:30

PREPARATION OF SrBi2Ta2O9 FERROELECTRIC THIN FILMS BY RF MAGNETRONSPUTTERING
Y. Nishioka *,** and H. Ishiwara ** (*R & D Association for Future Electron Devices and**Tokyo Institute of Technology)

30A-TF5-4C
11:45

DEVELOPMENT OF 500Å THICK MOCVD SBT FILMS FOR 0.18μm FeRAM PROCESSS. Narayan, V. Joshi, M. Lim, C. A. Paz de Araujo, L. D. McMillan, K. Uchiyama*, Y.
Shimada*, S. Miedl**, F. Schienle**, M. Schumacher** and H. Juergensen** (Symetrix
Corporation, *Matsushita Electronics Corp. and **AIXTRON AG, Kackertstr.)

30A-TF5-5C
12:00

IMPROVEMENT IN FERROELECRIC PROPERTIES OF SrBi2Ta2O9 THIN FILMS WITH
Bi2O3 BUFFER LAYERS BY LIQUID DELIVERY METALORGANIC CHEMICAL VAPORDEPOSITION
N.-J. Seong, W.-C. Shin, K.-J. Choi and S.-G. Yoon (Chungnam National University)

30A-TF5-6C
12:15

ELECTRODE SIZE EFFECT ON SWITCHING TIME OF SrBi2Ta2O9 THIN FILMS
X. B. Chen*,**, F. Yan*, C. H. Li*, J. S. Zhu* and Y. N. Wang* (*Yangzhou University and**Nanjing University)Thin Films (VI) (13:30 --- 15:15)
30A-TF6-1C
13:30

MODELING OF THICKNESS EFFECTS ON THE DIELECTRIC PROPERTIES OF BST THIN
FILMS
A. I Kingon, C. Parker, J.-P. Maria and S. K Streiffer* (North Carolina State University and*Argonne National Laboratory)

30A-TF6-2C
13:45

INFLUENCE OF STRAINS AND DEFECTS ON FERROELECTRIC AND DIELECTRIC
PROPERTIES OF THIN-FILM BARIUM-STRONTIUM TITANATES
D. Balzar, P. A. Ramakrishnan*, P. Spagnol**, S. Mani* and A. M. Hermann* (University ofDenver, *University of Colorado and **UNESP)

30A-TF6-3C
14:00

MICROSTRUCTURES AND DIELECTRIC PROPERTIES OF COMPOSITIONALLY GRADED(Ba1-xSrx)TiO3 THIN FILMS PREPARED BY PULSED-LASER DEPOSITION
X. Zhu*,**, H. L.-W. Chan**, C.-L. Choy** and K.-H. Wong* (*The Hong Kong Polytechnic
University and **Nanjing University)

30A-TF6-4C
14:15

MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF (BaxSr1-x)Ti1+yO3+z
THIN FILMS PREPARED AT LOW TEMPERATURES (T<450oC) BY RF MAGNETRONSPUTTERING
J. D. Baniecki, T. Shioga and K. Kurihara (Fujitsu Laboratories)

30A-TF6-5C
14:30

THICKNESS DEPENDENT PROPERTIES OF BARIUM STRONTIUM TITANATE THIN FILMS
BETWEEN 15 AND 600nm
J-P. Maria, C. B. Parker, G. Stauf and A. I. Kingon (North Carolina State University)

30A-TF6-6C
14:45

LEAKAGE CURRENT MEASUREMENTS OF STO AND BST THIN FILMS INTERPRETED BY
THE “DEAD LAYER” MODEL
S. Schmitz and H. Schroeder ( Institut für Festkörperforschung Forschungszentrum Jülich
GmbH)

30A-TF6-7C
15:00

THE EFFECTS OF POST OXYGEN PLASMA TREATMENT ON Pt/(Ba,Sr)TiO3/Pt
CAPACITORS AT LOW SUBSTRATE TEMPERATURES
J.-L. Wang, C.-C. Hwang, D.-C. Shye, M.-J. Lai, C.-C. Jaing1, J.-S. Chen*, S. Huang**,
M.-H. Juang***, B.-S. Chiou and H.-C. Cheng (National ChiaoTung University, *NSC,**Mosel Vitelic Incorporation and ***National Taiwan University)

Reception Hall
Piezoelectrics (III)(9:00 --- 10:30)

30B-PI3-1IN
9:00<INVITED> FINE TOLERANCE RESONATOR APPLICATIONS OF BISMUTH
LAYER-STRUCTURED FERROELECTRIC CERAMICS
A. Ando, T. Sawada, H. Ogawa, M. Kimura and Y. Sakabe (Murata Mfg. Co., Ltd.)

30B-PI3-2C
9:30

PROPERTIES OF (Na1/2Bi1/2)TiO3 ・Bi4Ti3O12 PIEZOELECTRIC CERAMICS
A. Sanson and R. W. Whatmore (Cranfield University)

30B-PI3-3C
9:45

Bi4Ti3O12-BASED LEAD-FREE PIEZOELECTRIC CERAMICS WITH GRAIN
ORIENTATION
H. Nagata, Y. Yano, T. Enosawa, Y. Fujita and T. Takenaka (Science University of Tokyo)

30B-PI3-4C
10:00

NOVEL PIEZOELECTRIC CERAMIC/POLYMER COMPOSITE TRANSDUCERS
S. Turcu, B. Jadidian*, S. C. Danforth and A. Safari (Rutgers University and *Layered
Manufacturing, Inc)

30B-PI3-5C
10:15

PIEZOELECTRIC PROPERTIES AND STRUCTURAL CHARACTERIZATION OF(Na,Bi)Bi2Ta2O9 CERAMICS WITH BISMUTH LAYER-STRUCTURE
H. Takeda, K. Komagata, M. Matsushita, R. Aoyagi, S. Okamura and T. Shiosaki (NaraInstitute of Science and Technology (NAIST))FeRAM & Devices (II)(11:00 --- 12:30)

30B-FD2-1IN
11:00<INVITED> STATUS AND ISSUES ON FeRAM INEGRATION AND CHARACTERIZATION
Y.-J. Park (Hynix Semiconductor Inc.)

30B-FD2-2C
11:30

COMPARISON OF MFOS AND MFMOS ONE TRANSISTOR MEMORY DEVICES
T. Li, S. T. Hsu, B. Ulrich and D. Evans (Sharp Laboratories of America, Inc)

30B-FD2-3C
11:45

A NOVEL SINGLE-FET CELL AND ARRAY ARCHITECTURE FOR FERROELECTRICNONVOLATILE MEMORIES
W.-Q. Zhang, T.-L Ren, C.-X. Li, T.-Q. Shao, J. Zhu, L.-T. Liu and Z.-J. Li (Tsinghua
University)

30B-FD2-4C
12:00

A 0.13μm 1.5V 1T1C 4Mb EMBEDDED FERROELECTRIC RAM WITH NOVELSENSE-AMPLIFIER AND PLATE-LINE ARCHITECTURE
J. Rickes, J. Grace, J. Fong, S. Gilbert, C. Pietrzyk, R. Lanham, J. Amano, H. McAdams*, S.
Summerfelt* and T. Moise* (Agilent Technologies Inc. and *Texas Instruments)

30B-FD2-5C
12:15

ADVANCED ENCAPSULATING BARRIER LAYER TECHNOLOGY FOR 0.25μm 1T1C 32MB
FRAM
H. J. Joo, Y. J. Song, H. H. Kim, N. W. Jang, S. Y. Lee, Y. S. Park* and K. Kim (Samsung
Electronics Co. Ltd and *samsung Advanced institute of Technology)

Piezoelectrics (IV) (13:30 --- 15:15)
30B-PI4-1IN
13:30<INVITED> PIEZOELECTRIC APPLICATIONS OF FERROELECTRIC SINGLE CRYSTALSK. Nakamura (Tohoku Univ.)

30B-PI4-2C
14:00

DIELECTRIC AND PIEZOELECTRIC PROPERTIES OF BaTiO3 AND PMN-PT SINGLECRYSTALS GROWN FROM POLYCRYSTALLINE PRECURSORS
J.–B. Lee, T.–M. Heo, D.–H. Kim, H.–Y. Lee and D.–Y. Kim* (Sunmoon University and*Seoul National University)

30B-PI4-3C
14:15

DIELECTRIC AND PIEZOELECTRIC PROPERTIES OF
0.93Pb(Zn1/3Nb2/3)O3-0.07PbTiO3 SINGLE CRYSTALS FOR PHASED ARRAY
Y. Hoson, T. Kobayashi, K. Harada, K. Itsumi, M. Izumi, Y. Yamashita and N. Ichinose*(Toshiba Corporation and *Waseda University,)

30B-PI4-4C
14:30

PZN-PT- AND BS-PT-BASED HIGH FREQUENCY SINGLE-ELEMENT TRANSDUCERS
FOR MEDICAL ULTRASONIC IMAGING
S. Rhee, S. Zhang, T. Shrout and K. K. Shung (The Pennsylvania State University)

30B-PI4-5C
14:45

NON-LINEAR CHARACTERIZATION OF HIGH POWER TRANSDUCERS
P. Gonnard and L. Petit (Institut National des Sciences Appliquées de Lyon Bâtiment Gustave
Ferrié)30B-PI4-6C
15:00

POTASSIUM NIOBATE SINGLE-DOMAIN CRYSTALS AS THE PIEZOELECTRICS WITHLOW DIELECTRIC AND HIGH ELECTROMECHANICAL COUPLING PROPERTIES
S. Wada, K. Muraoka, H. Kakemoto, H. Kumagai* and T. Tsurumi (Tokyo Institute ofTechnology and *Asahi Techno Glass Co., Ltd.)

Conference Room 1
Characterization (III) (9:00 --- 10:30)
30C-CH3-1IN
9:00<INVITED> APPLICATION OF SCANNING PROBE MICROSCOPE (SPM) FOR NOVELCHARACTERIZATION OF FERROLECTRIC CAPACITOR
I. Chung, I. Yi and M. Yastake* (SungKyunKwan University and *Seiko Instruments Inc.)

30C-CH3-2C
9:30

DEPTH PROFILING OF FERROELECTRIC THIN FILMS WITH HIGH ENERGY ION BEAM
SPECTROMETRY
T. Kaneko, S. Nomura, G. Kano and M. Watamori (Kochi University of Technology)

30C-CH3-3C
9:45

SPM INVESTIGATION OF THE PT/PZT INTERFACE IN ULTRATHIN FERROELECTRICS
X. Lu, F. Schlaphof, C. Loppacher, G. Suchanek and L. M. Eng (Institute for Applied
Photophysics)

30C-CH3-4C
10:00

MICROSTRUCTURAL CHARACTERIZATION OF SrRuO3 FILMS DEPOSITED ON Si USING
SrO AS BUFFER LAYERS
Y. X. Chen, J. Koike, T. Higuchi*, S. Iwashita*, M. Ishida* and T. Shimoda* (Tohoku
University and *SEIKO EPSON Co.)

30C-CH3-5C
10:15

ELECTRIC FIELD-INDUCED POLARIZATION REVERSAL BY SCANNING PIEZOELECTRIC
MICROSCOPY
V. V. Shvartsman, N. A. Pertsev*, A. Yu. Emelyanov* and A. L. Kholkin (University of Aveiro
and *A. F. Ioffe Physico-Technical Institute)

Characterization (IV) (11:00 --- 12:30)
30C-CH4-1IN
11:00<INVITED> MODELS OF ELECTRODE-DIELECTRIC INTERFACES IN FERROELECTRIC
THIN-FILM DEVICES
J. F. Scott and M. Dawber (Cambridge University)

30C-CH4-2C
11:30

SEPARATION OF THE NEAR INTERFACE REGIONS FROM THE BULK IN A
FERROELECTRIC THIN FILM
D. P. Chu*, B. M. McGregor, Z. G. Zhang, P. Migliorato, K. Ohashi, K. Hasegawa and T.
Shimoda (Epson Cambridge Laboratory, University of Cambridge and Seiko Epson
Corporation)

30C-CH4-3C
11:45

NEW APPROACH TO THIN FILM CHARACTERIZATION BY SWITCHING CURRENTANALYSIS
V. Shur, I. Baturin, E. Shishkin and M. Belousova (Ural State University)

30C-CH4-4C
12:00

FERROELECTRIC CAPACITOR COMPACT MODEL INCLUDING DYNAMIC ANDTEMPERATURE BEHAVIOR
E. Supriyanto, I. Schultz, M. Ullmann and H. Goebel (University of the Federal Armed
Forces)

30C-CH4-5C
12:15

IMPACT OF THICKNESS ON THE DIELECTRIC AND ELECTRICAL PROPERTIES OFPULSED LASER ABLATED SrBi2Nb2O9 THIN FILMS
S. Bhattacharyya, P. Victor and S. B. Krupanidhi (Indian Institute of Science)

Micro Ferroelectrics(13:30 --- 15:15)

30C-MF-1C
13:30

FERROELECTRIC NANOSTRUCTURES
M. Alexe, A. Visinoiu, C. Harnagea, D. Hesse and U. Gösele (Max Planck Institute ofMicrostructure Physics)

30C-MF-2C
13:45

SIZE EFFECT FOR LEAD ZIRCONIUM TITANATE NANOPOWDERS WITH
Pb(Zr0.3Ti0.7)O3 COMPOSITION
T. Ohno, T. Mori, H. Suzuki, W. Wunderlich*, M. Takahashi* and K. Ishikawa** (Shizuoka
University, *Nagoya Institute of Technology and **Yokkaichi University)

30C-MF-3C
14:00

SIZE-EFFECT IN MESOSCOPIC EPITAXIAL FERROELECTRIC STRUCTURES: INCREASE
OF PIEZOELECTRIC RESPONSE WITH DECREASING FEATURE-SIZE
S. Bühlmann, B. Dwir, J. Baborowski and P. Muralt (Swiss Federal Institute of Technology
Lausanne (EPFL))

30C-MF-4C
14:15

NON-LINEARITY OF LOCAL ELECTROMECHANICAL PROPERTIES STUDIED BYSCANNING PIEZOELECTRIC MICROSCOPY
V. V. Shvartsman, N. A. Pertsev*, P. M. Vilarinho and A. L. Kholkin (University of Aveiro and*A. F. Ioffe Physico-Technical Institute)

30C-MF-5C
14:30

COMPENSATION OF THE PARASITIC CAPACITANCE OF A SFM CANTILEVER USEDFOR MEASUREMENTS ON FERROELECTRIC CAPACITORS OF SUBMICRON SIZE BY
MEANS OF FINITE ELEMENT SIMULATIONS
K. Prume, S. Tiedke, T. Schmitz, A. Roelofs* and R. Waser* (aixACCT Systems GmbH and*Institut für Werkstoffe der Elektrotechnik Sommerfeldstr)

30C-MF-6C
14:45

SUBMICRON SCALE SIZE EFFECT IN PZT FILM CAPACITORS: POLARIZATION
DISTRIBUTION ANOMALIES AND UNDERLYING MECHANISM
I. Stolichnov, E. Colla, A. Tagantsev, S. Hong, B. Srowthi, N. Setter, J. S. Cross* and M.
Tsukada* (Swiss Federal Institute of Technology and *Fujitsu Laboratories, Ltd.)30C-MF-7C
15:00

METAL ORGANIC CHEMICAL VAPOR DEPOSITED ELECTRODES FOR FERROELECTRIC
AND HIGH-PERMITTIVITY OXIDE APPLICATIONS
P. K. Baumann, K. Fröhlich*, O. Valet**, P. Doppelt**, F. Schienle, M. Schumacher, J.
Lindner, G. Strauch and H. Juergensen (AIXTRON AG, *Slovak Academy of Sciences and**ESPCI-CNRS University)

Conference Room 3
Fundamental (II)

(9:00 --- 10:30)

30D-FU2-1IN
9:00<INVITED> DEFECT ENGINEERING FOR CONTROL OF POLARIZATION PROPERTIES IN
SrBi2Ta2O9
Y. Noguchi, M. Miyayama, K. Oikawa* and T. Kamiyama* (The University of Tokyo and*High Energy Accelerator Research Organization)

30D-FU2-2C
9:30

SWITCHING DYNAMICS IN FERROELECTRIC THIN FILMS: AN EXPERIMENTAL SURVEY
M. Dawber, P. Chandra*, F. D. Morrison, D. J. Jung, J. F. Scot, L. J. Sinnamon**. J. M.
Gregg**. Q. Zhang*** and R. W. Whatmore*** (Cambridge University, *NEC ResearchInstitute, **Queen's University Belfast and ***Cranfield University)

30D-FU2-3C
9:45

CONTRIBUTION OF Pb TO FERROELECTRICITY IN PEROVSKITE-TYPE OXIDES
H. Miyazawa, E. Natori, M. Ishida, T. Shimoda, F. Ishii* and T. Oguchi* (SEIKO EPSON
Corporation and *Hiroshima University)

30D-FU2-4C
10:00

CRYSTAL CHEMISTRY OF BISMUTH-BASED FERROELECTRICS
D. I,. Woodward, I. M. Reaney, A. R. West and C. A. Randall* (University of Sheffield and*University Park)

30D-FU2-5C
10:15

BIOFERROELECTRICITY AND BIOMEDICINE: NEW RESULTS AND APPROACHES
V. Bystrov, N. Bystrova, G. Ovtchinnikova, Y. Pirogov and Y. Dekhtyar (Russian Academy of
Sciences)

Dielectrics (I)(11:00 --- 12:30)

30D-DI1-1IN
11:00<INVITED> RECENT TOPICS IN THE FIELD OF MATERIAL TECHNOLOGY OF
T. Nomura, M. Miyauchi, Y. Fujikawa and Y. Nakano (TDK Corporation)

30D-DI1-2C
11:30

BaTiO3 SYSTHESIS TECHNIQUE AND ITS EFFECT ON BME DIELECTRIC
D. McCauley, M. Chu, M. Megherhi and E. Davis (Ferro Electronic Materials)

30D-DI1-3C
11:45

DIELECTRIC PROPERTIES OF FINE-GRAINED BaTiO3 CERAMICS DOPED WITH CaO
Y. Sakabe, N. Wada, T. Hiramatsu, T. Tonogaki and T. Tsujimoto (Murata Mfg. Co.,Ltd.)

30D-DI1-4C
12:00

THE EFFECT OF Ho/Mg RATIO ON FORMATION OF CORE-SHELL STRUCTURE IN
BaTiO3 AND ON DIELECTRIC PROPERTIES OF BaTiO3 CERAMICS.
A. Kirianov, T. Hagiwara*, H. Kishi* and H. Ohsato (Nagoya Institute of Technology and*Taiyo Yuden Co. Ltd.)

30D-DI1-5C
12:15

DIELECTRIC PROPERTIES OF (Ba,Sr)TiO3 MOD FILMS GROWN ON VARIOUS
SUBSTRATES
P. Woo, I. P. Koutsaroff, M. Zelner, L. McNeil, J. Obeng, L. Chmiel, A. Kassam, B.
McClelland and A. C.-Lawry (Gennum Corporation)

Optics (II) (13:30 --- 15:15)
30D-OP2-1IN
13:30<INVITED> DEFECT CONTROLLED STOICHIOMETRIC LITHIUM NIOBATE AND LITHIUMTANTALATE CRYSTALS FOR NOVEL DEVICE
K.Kitamura and Y.Furukawa* (National Institute for Materials Science and *OXIDECorporation)

30D-OP2-2C
14:00

A NOVEL MINIATURE OPTICAL SWITCH ARRAY WITH CANTILEVER MICROMIRRORSDRIVEN BY PZT FILMS
Y. Xu, T.-L. Ren, L.-T. Zhang, J.-S. Liu, L.-T. Liu and Z.-J. Li (Tsinghua University)

30D-OP2-3C
14:15

NANO-SIZED INVERTED DOMAIN DOT FORMATION IN STOICHIOMETRIC LiTaO3
SINGLE CRYSTAL USING SCANNING NONLINEAR DIELECTRIC MICROSCOPY
Y. Hiranaga, Y. Cho, Y. Wagatsuma, K. Terabe* and K. Kitamura* (Tohoku University and*National Institute for Materials Science)

30D-OP2-4C
14:30

DEFLECTION OF LIGHT UNDER ELECTRIC FIELD IN FERROELECTRIC-FERROELASTIC
AHSe CRYSTAL
Z. Czapla, S. Dacko and P. Staniorowski (Univeristy of Wrocław)

30D-OP2-5IN
14:45<INVITED> HOLOGRAPHIC STORAGE SYSTEMS AND MATERIALS
M. Zgonik (Swiss Federal Institute of Technology)

Plenary
Noh Theatre
Plenary (II) (15:45 --- 16:45)
30A-PL2-1PL

DOES MEMORY OF DREAM COME TRUE? (MARKET PROSPECTS AND TECHNICALHURDLE FOR FRAM)
H. Nishi (Fujitsu)

PosterConference Room 2
Dielectrics (Capacitors, Ceramics) (17:30 --- 19:00)
30E-DC-1P

DENSIFICATION AND DIELECTRIC PROPERTIES OF BARIUM NEODYMIUM TITANIUM
OXIDEC.-H. Lu and Y.-H. Huang (National Taiwan University)

30E-DC-2P

DIELECTRIC PROPERTIES OF Pb(Mg1/3V2/3)O3-PbZrO3 MATERIALSY. Yamashita and Y. Hosono (Toshiba Corporation)

30E-DC-3P

A NEW, LEAD FREE, FAMILY OF PEROVSKITES WITH A DIFFUSE PHASE TRANSITION:NaNbO3-BASED SOLID SOLUTIONS
I. P. Raevski, S. A. Prosandeev and L. Jastrabik* (Rostov State University and *Institute ofPhysics AS CR)

30E-DC-4P

NET SHAPE GRAIN ORIENTED LEAD METANIOBATE COMPONENTS BY LAYEREDMANUFACTURING
M. Allahverdi, N. M.-Hagh, K. Nonaka and A. Safari (Rutgers University)

30E-DC-5P

EFFECT OF Mn ADDITION ON ELECTRICAL PROPERTIES OF Ni-MLCC
K. Morita, Y. Mizuno, H. Chazono and H. Kishi (Taiyo Yuden Co., Ltd.)

30E-DC-6P

STUDY OF THE ELECTRO-MECHANICAL BEHAVIOR OF FERROELECTRIC CERAMICS
O. Guillon, F. Thiebaud, D. Perreux and P. Delobelle (Université de Franche-Comté 24)

30E-DC-7P

EFFECT OF DIELECTRIC LAYER THICKNESS REDUCTION ON INSULATION RESISTANCE
OF Ni-MLCs
D. Iwanaga, M. Miyauchi, T. Hibi and Y. Nakano (TDK Corporation)

30E-DC-8P

EFFECT OF NICKEL CONTENT ON THE CRYOGENIC DIELECTRIC RESPONSE OFTEMPERATURE Pb((Mg1-XNiX)1/3Ta2/3)O3
A. K. Gutmann and S. M. Pilgrim (Alfred University)

30E-DC-9P

INFLUENCE OF Nb2O5 CONTENT ON DIELECTRIC CHARACTERISTICS OF
FERROELECTRIC SBN CERAMICS.
M.-S. Kim, S.-I. Kang, J.-H. Lee, J.-J. Kim, H. Y. Lee* and S.-H. Cho (Kyungpook National
University and *Yeongnam University)

30E-DC-10P

AN EFFECTIVE INTERLAYER DIELECTRIC AND PASSIVATION SCHEME USINGREACTIVELY SPUTTERED Al2O3 FOR THE MULTILAYER (Ba,Sr)TiO3 CAPACITORS.
L. McNeil, A.Kassam, M. Zelner and P. Woo. (Gennum Corporation)

30E-DC-11P

AN EFFECTIVE INTERLAYER DIELECTRIC AND PASSIVATION SCHEME USINGREACTIVELY SPUTTERED Al2O3 FOR (Ba,Sr)TiO3 CAPACITORS
A. Kassam, I. Koutsaroff, L. McNeil, J. Obeng, P. Woo and M. Zelner (Gennum Corporation)

30E-DC-12P

EFFECT OF Y DOPING ON ACCEPTOR VALENCE
S. Sato, T. Nomura and K. Fukuda* (TDK materials research center and *TDK research
center)30E-DC-13P

MICROSTRUCTURAL AND DIELECTRIC PROPERTIES OF CERAMICS BASED ON
K2Sr4Nb10O30 and BaTiO3
R. Chen, L. Li and Z. Gui (Tsinghua University)

30E-DC-14P

MODIFICATION OF DIELECTRIC PROPERTIES IN THE LEAD MAGNESIUMNIOBATE-LEAD TITANATE FERROELECTRIC SYSTEM
W.-J. Hwang and C.-H. Lu (National Taiwan University)

30E-DC-15P

PROPERTIES OF LEAD BARIUM ZIRCONATE TITANATE-BASED RELAXORDIELECTRICS FOR POWER ELECTRONICS APPLICATIONS
M.-J. Pan, R. J. Rayne* and B. A. Bender* (NOVA Research, Inc. and *Naval ResearchLaboratory)

Ferroelectrics (Ceramics) (17:30 --- 19:00)
30E-FC-1P

PROPERTIES OF PbFe2/3W1/3O3-PbTiO3 SYSTEM IN THE RANGE OF
MORPHOTROPIC PHASE BOUNDARY
L. Mitoseriu*,**, P. M. Vilarinho* and J. L. Baptista* (*University of Aveiro and **Univ. of
Genoa)

30E-FC-2P

MICROSTRUCTURE STUDY OF INTERGROWTH Bi4Ti3O12-SrBi4Ti4O15 AND
Bi3.25La0.75Ti3O12-SrBi4Ti4O15 CERAMICS
D. Su*,**, Y. Ding*,**, J. S. Zhu* and Y. N. Wang* (*Nanjing University and **Chinese
Academy of Sciences)

30E-FC-3P

DIELECTRIC AND MECHANICAL PROPERTIES OF (1-X)PMN-XPTP. Bao, W. li, F. Yan*, Y. Dai, H. Shen, J. Zhu, H. L. W. Chan**, C. L. Choy** and Y. Wang
(Nanjing University, *Cambridge University and **The HongKong Polytechnic University)

30E-FC-4P

FERROELECTRIC-RELAXOR COMPOSITE THICK FILMS
A. Wu, P. M. Vilarinho, A. Kholkin and J. L. Baptista (University of Aveiro)

30E-FC-5P

STRUCTURAL AND DIELECTRIC BEHAVIOR OF Ba-SUBSTITUTED
Pb(Yb1/2Nb1/2)O3 CERAMICS
J.-H. Kim , H. S. Kim and W. K. Choo (Korea Advanced Institute Of Science and Technology)

30E-FC-6P

PHASE TRANSITION BEHAVIOR OF Sc-SUBSTITUTED Pb(Yb1/2Nb1/2)O3
CERAMICS
J.-H. Kim, K. S. Koh* and W. K. Choo (Korea Advanced Institute of Science and Technology
and *Chungang University)

30E-FC-7P

HOT-PRESSED FERROELECTRIC CERAMICS OF SOLID SOLUTIONS OF THE SYSTEM
Ba1.65Sr3.35Nb10O30-Ba4Na2Nb10O30 WITH TTB STRUCTURES
R. Z. Mehdiyeva and A. I. Mamedov (National Academy of Sciences of Azerbaija)

30E-FC-8P

PHASE TRANSITION OF Fe AND Nb-SUBSTITUTED Pb(Mg1/2W1/2)O3 CERAMICS
K. S. Koh, I. W. Shim, J.-H. Kim* and W. K. Choo* (Chungang University and *Korea
Advanced Institute of Science and Technology)

30E-FC-9P

POLING OF FERROELECTRIC PT/P(VDF-TrFE) 0-3 COMPOSITES
Y.-T. Or, B. Ploss, F. G. Shin, H. L.-W. Chan and C.-L. Choy (The Hong Kong Polytechnic
University)

30E-FC-10P

DIELECTRIC PROPERTIES OF SAMARIUM SUBSTITUTED PLZT
C. Prakash and O. P. Thakur (Solid State Physics Laboratory)

30E-FC-11P

STRUCTURAL AND DIELECTRIC PROPERTIES OF CALCIUM SUBSTITUTED LEAD
TITANATE
C. Prakash* and A. Bhalla (The Pennsylvania State University and *Solid State Physics
Laboratory)

30E-FC-12P

PREPARATION OF nm-ORDERED BARIUM TITANATE FINE PARTICLES USING THE
2-STEP THERMAL DECOMPOSITION OF BARIUM TITANYL OXALATE AND THEIRDIELECTRIC PROPERTIES
S. Wada, T. Hoshina, H. Kakemoto and T. Tsurumi (Tokyo Institute of Technology)

30E-FC-13P

FERROELECTRIC PROPERTIES IN MODIFIED-SrBi2Ta2O9 CERAMICS
C. I. Cheon, B. Y. Lee and J. S. Kim (University Asan)

30E-FC-14P

ELECTRICAL PROPERTIES OF FERROELECTRIC PLZT AS A ENERGY TRANSDUCER IN
APPLICATION TO OPTICAL MOTOR
M. Ichiki, Y. Morikawa and T. Nakada* (National Institute of Advanced Industrial Science andTechnology and *Tokyo Denki University)

30E-FC-15P

ORIGIN OF ABNORMAL GRAIN GROWTH IN TUNGSTEN BRONZE STRUCTUREDFERROELECTRIC SrXba1-XNb2O6(SBN) CERAMICS.
M.-S. Kim, J.-H. Lee, J.-J Kim, H. Y. Lee* and S.-H. Cho (Kyungpook National University
and *Yeongnam University)

30E-FC-16P

EFFECTS OF SILVER-DOPING ON FERROELECTRIC SrBi2Ta2O9
B. Sih, A. Jung and Z.-G. Ye (Simon Fraser University)

30E-FC-17P

FERROELECTRIC PROPERTIES AND SOLID SOLUTION RANGE IN SrO-Bi2O3-Ta2O5
SYSTEM AROUND SrBi2Ta2O9
K. Komagata, H. Takeda, S. Okamura and T. Shiosaki (Nara Institute of Science andTechnology (NAIST))

30E-FC-18P

INFLUENCE OF SINTERING ATMOSPHERE ON DENSIFICATION AND DIELECTRIC
CHARACTERISTICS OF FERROELECTRIC SBN CERAMICS
S.-I. Kang, M.-S. Kim, J.-H. Lee, J.-J. Kim, H. Y. Lee* and S.-H. Cho (Kyungpook National
University and *Yeongnam University)

30E-FC-19P

PREPARATION ,SINTERING BEHAVIOR ,PROPERTIES OF SrBi2Ta2O9
B. Li, X. Wang and L. L (Tsinghua University)

Conference Room 4
Piezoelectrics (I) (17:30 --- 19:00)
30F-PZ1-1P

Ba0.5Sr0.5TiO3 FERROELECTRIC THICK FILM WITH UNIFORM THICKNESS AND ITSAPPLICATION TO RF MEMS DEVICES
Z. Wang, J. Liu, T. Ren, L. Liu and Z. Li (Tsinghua University)

30F-PZ1-2P

STUDY OF ZINC AND NIOBIUM MODIFIED LEAD ZIRCONATE TITANATE FIBER/EPOXY
1-3 COMPOSITES
K. Li, H. L. W. Chan and C. L. Choy (The Hong Kong Polytechnic University)

30F-PZ1-3P

EFFECT OF Ta-DOPING ON DIELECTRIC AND PIEZOELECTRIC PROPERTIES OF
Ta-DOPED yPbMg1/3(Nb1-xTax)2/3O3-(1-y)PbTiO3
J. T. Wang (Southern University and A&M College)

30F-PZ1-4P

PZT COATED MEMBRANE STRUCTURES FOR MICROMACHINED ULTRASONIC
TRANSDUCERS
J. Baborowski, P. Muralt*, D. Schmitt*, N. Ledermann, P. K. Weber*, W. Steichen**,S.
Petitgrand***, A. Bosseboeuf***, N. Setter and Ph. Gaucher**** (Swiss Federal Institute ofTechnology EPFL, *Fraunhofer IBMT, **Thales-Microsonics, Sophia-Antipolis,***Université Paris XI, **** Thales Central Research Laboratory)30F-PZ1-5P

DESIGN AND ANALYSIS OF PMN-PNN-PZT BASED PIEZOELECTRIC ULTRASONIC
TRANSDUCERS FOR DISTANCE MEASUREMENT
Z. Gui, X. Hu and L. Li (Tsinghua University)

30F-PZ1-6P

EFFECTS OF MICROWAVE AND HOT-PRESS HYBRID SINTERING ON
MICROSTRUCTURE AND PIEZOELECTRIC PROPERTIES OF
0.24Pb(Zn1/3Nb2/3)O3-0.376PbTiO3-0.384PbZrO3 CERAMICS
M. Kobune, K. Muto, H. Takahashi*, J. Qiu** and J. Tani** (Himeji Institute of Technology,*Fuji Ceramics Corporation and **Tohoku University)

30F-PZ1-7P

PIEZOELECTRIC PROPERTIES OF METASTABLE (Li, Na)NbO3 CERAMICS
M. Kimura, T. Ogawa, A. Ando and Y. Sakabe (Murata Mfg. Co., Ltd.)

30F-PZ1-8P

DIELECTRIC AND PIEZOELECTRIC PROPERTIES OF Mn-MODIFIED Bi4CaTi4O15
BASED CERAMICS
M. Yokosuka (Iwaki-Meisei University)

30F-PZ1-9P

ELECTROMECHANICAL CHARACTERISTICS OF MICROMACHINED PZT CANTILEVER
FOR PROTEIN MASS DETECTING SYSTEM
J. H. Lee*, **, K. H. Yoon* and T. S. Kim** (*Yonsei University and **KIST)

30F-PZ1-10P

LEAD ZIRCONATE TITANATE THICK FILMS BY SOL-GEL METHOD FOR PIEZOELECTRIC
APPLICATION
Y. Ohya, T. Tamakoshi, T. Ban and Y. Takahashi (Gifu University)

30F-PZ1-11P

SINTERABILITY AND PIEZOELECTRIC PROPERTIES OF KNbO3 CERMICS SUBSTITUTEDBY LEAD AND SODIUM FOR POTASSIUM
S. Tashiro, H. Nagamatsu and K. Nagata (The National Defense Academy)

30F-PZ1-12P

PREPARATION OF Ba(TiZr)O3 THICK FILMS BY SCREEN PRINTING
T. Futakuchi, Y. Nakamura* and M. Adachi* (Toyama Industrial Technology Center and*Toyama Prefectural University)

30F-PZ1-13P

THE DIELECTRIC AND ELECTRIC CHARACTERISTICS OF PIEZOELECTRIC CERAMICFOR ULTRASONIC OSCILLATOR APPLICATION
S. H. Lee, J. Y. Seok, G. H. Ryoo, K. H. Sin*, K. H. Yoon** and J. H. Yoo** (Kyung Book
National University, *Kyung Seong University and **Se Myung University)

30F-PZ1-14P

ROOM-TEMPERATURE WAFER BONDING OF SILICON AND PIEZOELECTRIC CERAMICSBY MEANS OF ARGON BEAM SURFACE ACTIVATION
H. Takagi, R. Maeda and T. Suga* (National institute of advanced industrial science andtechnology and *University of Tokyo)

30F-PZ1-15P

A NOVEL MEMS GAS SENSOR WITH EFFECTIVE COMBINATION OF HIGH SENSITIVITY
AND HIGH SELECTIVITY
J. Zhou*,**, P. Li*, S. Zhang*, F. Zhou*, Y. Huang*, P. Yang*, M. Bao* (*Fudan University
and **East-China University of Science and Technology)

30F-PZ1-16P

A METHOD OF IMPROVING THE RESOLUTION AND TORQUE OF STEPPER ULTRASONIC
MOTOR
L. Li, Z. Xing, X. Chu and Y. Li (Tsinghua University)

30F-PZ1-17P

MULTI-FREQUENCY HARMONIC ARRAY TRANSDUCER FOR MEDICAL IMAGING
B. Jadidian, A. Winder,* W. Shi,** F. Forsberg** and A. Safari*** (Layered Manufacturing,Inc., *Acoustic Science Associates, **Thomas Jefferson University Hospital and ***Rutgers
University)

30F-PZ1-18P

EVALUATION OF LONGITUDINAL DISPLACEMENT FOR LEAD ZIRCONATE TITANATETHICK FILMS
T. Iijima and H. Matsuda (AIST)

30F-PZ1-19P

PREPARATION OF DIFFUSER TYPE MICROPUMP USING SCREEN-PRINTED PZT-PCW
THICK FILMS
Y.-B. Kim, H.-J. Kim*, J.-Y. Kang*, C.-I. Cheon**, D.-J. Choi and T.-S. Kim* (Yonsei
University, *Korea Institute of Science and Technology and **Hoseo University)

30F-PZ1-20P

DEVELOPMENT OF MULTILAYER CERAMIC SPEAKER WITH LOW TEMPERATURE FIREDPIEZOELECTRICS
H. Uenishi, Y. Inomata, H. Suzuki, Y. Watanabe and H.Kishi (Taiyo Yuden Co.)

30F-PZ1-21P

RF-MEMS BAW FILTER USING SURFACE MICROMACHINING
P. Cong, T.-L. Ren, J.-S. Liu, L.-T. Liu and Z.-J. Li (Tsinghua University)

30F-PZ1-22P

METHOD TO ADJUST THE RESONANT FREQUENCY FOR THIN-FILM BAW FILTERS
P. Cong, T.-L. Ren, J.-S. Liu, L-T. Liu and Z.-J. Li (Tsinghua University)

30F-PZ1-23P

RELATION BETWEEN SAMPLE CONFIGURATIONS AND NONLINEAR PIEZOELECTRIC
COEFFICIENTS
K. Ishii, S. Tashiro and K. Nagata (The National Defense Academy)

30F-PZ1-24P

FREQUENCY LIMITATIONS OF PHONON HOLE BURNING IN PIEZOELECTRIC POWDERS
F. Tsuruoka (Kurume University)

30F-PZ1-25P

DESIGN AND FABRICATION OF PIEZOELECTRIC CERAMIC ACTUATORS WITH
FUNCTIONAL GRADIENTS
D. Jin and Z. Meng* (Shanghai Jiaotong University and *Shanghai University)

30F-PZ1-26P

NUMERICAL SIMULATIONS OF THE STATOR IN TRAVELING-WAVE ULTRASONIC
X. Zhao, H. Chen and Z. Meng (Shanghai University)

30F-PZ1-27P

THIN-FILM BULK ACOUSTIC RESONATORS AND FILTERS USING PZT/PT BASEDSTRUCTURES
H.-J. Zhao, J.-S. Liu, T.-L. Ren, L.-T. Liu and Z.-J. Li (Tsinghua University)

30F-PZ1-28P

MODELING AND SIMULATION OF THIN-FILM BULK ACOUSTIC RESONATORS
H.-J. Zhao, T.-L. Ren, J.-S. Liu, L.-T. Liu and Z.-J. Li (Tsinghua University)

30F-PZ1-29P

VOLTAGE CREEP ON PIEZOELECTRIC MATERIALS
D. Guyomar and D. Audigier and C. Richard (INSA)

30F-PZ1-30P

LOW-LOSS SURFACE ACOUSTIC WAVE FILTER BASED ON ZnO DEPOSITED ONGALLIUM ARSENIDE SUBSTRATE
E. Dogheche, V. Sadaune and D. Rèmiens (IEMN)

30F-PZ1-31P

CHARACTERISTICS OF THE L1-B4 MODE LINEAR ULTRASONIC MOTORS
T. G. Park, B. J. Kim, M. H. Kim and K. Uchino* (Changwon University and *Pennsylvania
State University)

30F-PZ1-32P

VERY HIGH DISPLACEMENT MONOLITHIC PIEZO ACTUATORS
A. Hooley (St John's Innovation Centre)

30F-PZ1-33P

HIGH PERFORMANCE ACTUATOR AND TRANSDUCER DEVICES BASED ON
ELECTROSTRICTIVE P(VDF-TRFE) POLYMER
Q. M. Zhang, Z.-Y. Cheng, T. -B. Xu and F. Xia (The Pennsylvania State University)

30F-PZ1-34P

MODELING OF PIEZOELECTRIC MICROPHONE WITH MULTILAYER FERROELECTRICSTRUCTURES
T.-L. Ren, L.-T. Zhang, J.-S. Liu, L.-T. Liu and Z.-J. Li (Tsinghua University)

30F-PZ1-35P

CHARACTERISATION OF MEMS DEVICES USING A POLARISATION INTERFEROMETER
D. Jenkins, W. Clegg, X. Liu, E. Fribourg-Blanc*, E. Cattan* and D. Remiens* (University of
Plymouth and *Université de Valenciennes)

30F-PZ1-36P

THE LINEARISATION OF AN ELECTROSTRICTIVE DEVICE FOR MEMS APPLICATIONS
D. Jenkins, E. Fribourg-Blanc*, E. Cattan* and D. Remiens* (University of Plymouth and*Université de Valenciennes)

30F-PZ1-37P

ULTRSONIC LINEAR MOTOR USING MULTILAYER PIEZOELECTRIC ACTUATORS MADE
OF PIEZOELECTRIC MATEARIAL WITH HIGH MECHANICAL QUALITY FACTOR
T. Funakubo*,** Y. Tomikawa*, M. Nakamura**, Y. Kasai** and I. Nakazawa**(*Yamagata University and **Olympus Optical Co., Ltd.)

30F-PZ1-38P

PIEZOELECTRIC LINEAR MOTOR WITH TWO MOTIONAL FUNCTIONS OF SMALLDISPLACEMENT AND LARGE DISPLACEMENT
Y. Tomikawa, Y. Maruko and T. Takano* (Yamagata University and *Tohoku Institute ofTechnology)

30F-PZ1-39P

ELECTRICAL PROPERTIES AND MICROSTRUCTURES OF MICROWAVE SINTEREDPZN-BASED CERAMICS
C.-L. Li and C.-C. Chou (National Taiwan University)

Reception Hall
MFS, MFMIS(17:30 --- 19:00)

30G-MM-1P

ONE TRANSISTOR MEMORY DEVICES WITH IMPROVED RETENTION
T. Li (Sharp labs of America, Inc)

30G-MM-2P

METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR (MFMIS)STRUCTURES USING (Bi,La)4Ti3O12 AND HIGH-k DIELECTRIC FILMS
E. Tokumitsu and T. Suzuki (Tokyo Institute of Technology)

30G-MM-3P

SIMULATION MODEL OF A FERROELECTRIC FIELD EFFECT TRANSISTOR
T. C. MacLeod and F. D. Ho* (NASA and *University of Alabama)

30G-MM-4P

FABRICATION OF METAL/FERROELECTRIC/INSULATOR/SEMICONDUCTOR FIELDEFFECT TRANSISTOR USING Mo/Pb(Zr,Ti)O3/ZrTiO4/POLY Si THIN FILM STRUCTURE
J.-H. Park, Y.-G. Yoon and S.-K.Joo (Seoul National University)

30G-MM-5P

INVESTIGATION OF A NOVEL MFS FET ARRAY
C.-X. Li, T.-L. Ren, W.-Q. Zhang, T.-Q. Shao, J.-S. Liu, L.-T. Liu and Z.-J. Li (Tsinghua
University)

30G-MM-6P

MFIS FET WITH UNTRA THIN Si3N4 BUFFER LAYER MADE BY ATOMIC NIGROGEN
RADICALS
Y. Fujisaki, S. Ogasawara, K. Aizawa and H. Ishiwara (Tokyo Institute of Technology)

30G-MM-7P

Au/FERROELECTRIC Na0.5K0.5NbO3/Ta2O5/Si - MFIS MEMORY DIODES
C.-R. Cho* ***, B.-M. Moon*, J. Sundqvist**, A. Hårsta** and A. Grishin*** (*Korea
University, **The Ångström Laboratory and ***Royal Institute of Technology)

30G-MM-8P

FABRICATION OF MFIS DIODES USING BLT (Bi, La)4Ti3O12 AND LaAlO3 BUFFERLAYERS
B.-E. Park and H. Ishiwara (Tokyo Institute of Technology)

30G-MM-9P

FINITE-DIFFERENCE SIMULATION OF CONDUCTION CURRENT INMETAL-FERROELECTRIC-METAL CAPACITANCE WITH THE DEPLETION EFFECTS
M.-H. Lai, T. G.-Y. Lee*, C.-L. Wang, D.-C. Shye*, C.-C. Hwang*, C.-Y. Yeh, T.-Y. Tseng*and H.-C. Cheng* (University of Feng Chia and *National Chiao Tung University)

30G-MM-10P

A NEW COMPACT MODEL FOR THE FERROELECTRIC DEPLETION EFFECTS OF
METAL-FERROELECTRIC-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS
C.-Y. Yeh, T. G.-Y. Lee*, C.-L. Wang, D.-C. Shye*, C.-C. Hwang*, M.-H. Lai, T.-Y. Tseng*and H.-C. Cheng* (University of Feng Chia and *National Chiao Tung University)

30G-MM-11P

SIMULATION OF RETENTION PROPERTY OF FERROELECTRIC MEMORIES
T. Tamura, Y. Arimoto* and H. Ishiwara** (R&D Association for Future Electron Devices,*Fujitsu Laboratories Ltd and **Tokyo Institute of Technology)

30G-MM-12P

FABRICATION OF MFIS CAPACITORS USING Pb5Ge3O11 AND ALTERNATIVE GATEOXIDE BY PULSED LASER DEPOSITION
J.-H. Park, I..-D. Kim, M.-S. Kim, J.-H. Ahn* and H.-G. Kim (KAIST and *LG Elite)

30G-MM-13P

DEPTH PROFILE OF FIXED CHARGE IN EPITAXIAL OXIDE FILMS ON SILICON
SUBSTRATE FOR MFIS STRUCTURE
T. Yamada, N. Wakiya, K. Shinozaki and N. Mizutani (Tokyo Institute of Technology)

30G-MM-14P

CHARACTERISTICS OF LaAlO3 AS INSULATING BUFFER LAYERS OF
FERROELECTRIC-GATE FETS
S. K. Kang and H. Ishiwara (Tokyo Institute of Technology)

30G-MM-15P

IMPROVEMENT OF RETENTION CHARACTERISTICS IN
METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURE BY OPTIMIZINGSTRUCTURE AND MATERIAL PROCESSING
M. Noda, K. Kodama, M. Takahashi, D. Ricinshi, A. I. Lerescu and M. Okuyama (Osaka
University)

30G-MM-16P

FERROELECTRIC/AMORPHOUS Si MIS STRUCTURES FOR MEMORY APPLICATIONS
A. L. Kholkin, R. Martins*, H. Aguas*, I. Ferreira*, V. Silva*, O. Smirnova, M. E. V. Costa,
P. M. Vilarinho, E. Fortunato* and J. L. Baptista (Universidade de Aveiro and *CENIMAT,
DCM da Faculdade de Ciências e Technologia da Universidade Nova de Lisboa and
CEMOP-UNINOVA)

30G-MM-17P

EFFECTS OF CHARGE TRAPPING ON THE ASYMMETRICAL SHIFT OF MEMORY
WINDOW IN MFIS DEVICES
Y. W. Lee, D. Kang, Y. Roh, S. K. Lee* and Y. Kim* (Sungkyunkwan University and*Semiconductor Materials Laboratory)

30G-MM-18P

THE EFFECT OF LEAKAGE CURRENT ON THE RETENTION PROPERTY OF YMnO3
BASED MFIS CAPACITOR
D. Ito, N. Fujimura and T. Ito (Graduate School of Engineering Osaka Prefecture University)

FeRAM, Device, Integration, Circuits (17:30 --- 19:00)
30G-IF-1P

REDUCED THERMAL BUDGET ADVANCED PROCESS FOR SBT THIN FILMS IN HIGHDENSITY STACK CELL FeRAMs
J. Karasawa, Y. Hamada*, E. Natori*, K. Oguchi*, T. Shimoda*, V. Joshi**, N.
Solayappan**, Larry D McMillan** and Carlos A Paz de Araujo** (Epson Research andDevelopment, Inc. *Seiko Epson Corporation. and **Symetrix Corporation)

30G-IF-2P

NEW APPROACH ON LOGIC APPLICATION OF FERAM TECHNOLOGY
M. Takayama, S. Koyama and H. Nozawa (Kyoto University)

30G-IF-3P

PLASMA-ASSISTED DRY ETCHING OF FERROELECTRIC CAPACITOR MODULE AND
APPLICATION TO 32M FRAM DEVICE WITH SUB-MICRON FEATURE SIZE
S. W. Lee, S. H. Joo, K. M. Lee, S. D. Nam, K. S. Park, Y. T. Lee, H. G. An, M. S. Lee, H. J.
Kim, S. O. Park, U. I. Chung and J. T. Moon (Samsung Electronics Co.)

30G-IF-4P

SIGNAL WINDOW MAP - A NEW ANALYSIS TOOL FOR FERAM
N. Rehm, ‚l. Jacob and J. Wohlfahrt (Infineon Technologies Japan K.K.)

30G-IF-5P

INTEGRATION OF 1T1C COB CELL WITH Ir/IrO2/PZT/Ir CAPACITOR FORMED BY
MOCVD-PZT
M.-S. Lee, K.-S. Park, S.-D. Nam, K.-M. Lee, S.-H. Joo, S.-W. Lee, H.-G. An, H.-J. Kim, S.-O.
Park, U.-I. Chung and J.-T. Moon (Samsung Electronics Co. Ltd.)

30G-IF-6P

ELECTRICAL PROPERTIES OF FERROELECTRIC FILM ETCHED BY HELICON PLASMAETCHING METHOD
I.-K. You, W.-J. Lee, S.-O. Ryu, S. M. Cho, N. Y. Lee, B.-G. Yu, K.-I. Cho, S.-H. Lee*, J. Sone*and J. Moon* (ETRI and *NexTech Solutions Co.)

30G-IF-7P

ROBUST PROCESS INTEGRATION AND RELIABILITIES FOR 1MB FERROELECTRICMEMORIES USING NOBLE-BAKED BLT FILMS
B. Yang, S. S. Lee, Y. M. Kang, K. H. Noh, S. W. Lee, N. K. Kim, S. Y. Kweon, S. J. Yeom and
Y. J. Park (Hynix Semiconductor Incorporated)

30G-IF-8P

A NOVEL NON-VOLATILE FLIP-FLOP USING A FERROELECTRIC CAPACITOR
M. Ueda, T. Otsuka, K. Toyoda, K. Morimoto and K. Morita (Matsushita Electric Industrial
Co.)

30G-IF-9P

HIGHLY RELIABLE AND MANUFACTURABLE 1MB 1T1C FERAM
S.-H. Oh, S.-K. Hong, C.-G. Lee, E.-Y. Kang, Y.-M. Kang, S.-S. Lee, H.-B. Kang and Y.-J.
Park (Hynix Semiconductor, Inc.)

30G-IF-10P

ETCH CHARACTERISTICS OF FERROELECTRIC (Bi4-XlaX)Ti3O12 THIN FILMS IN
AN INDUCTIVELY COUPLED PLASMA
C. W. Chung, Y. H. Byun, H. I. Kim, J. K. Yoon, Y. S. Song and J. K. Lee* (Inha University,*Samsung Advanced Institute of Technology)

30G-IF-11P

FABRICATION AND CHRACTERIZATION OF 1T2C-TYPE FERROELECTRIC MEMORYCELL WITH LOCAL INTERCONNECTIONS
S. Ogasawara and H. Ishiwara (Tokyo Institute of Technology)

30G-IF-12P

Cr BASED TERNARY BARRIER LAYER FOR HIGH DENSITY FERAM APPLICATIONS
J. Koo, N. Park, J. Kim, S.-K. Hong* and S. J. Yeom* (Kookmin University and *Hynix
Semiconductor Inc.)

30G-IF-13P

PLASMA ETCHING OF PZT CAPACITOR FOR FERROELECTRIC MEMORY APPLICATION
M. Ueda, M. Endo and K.Suu (ULVAC)

30G-IF-14P

CHARACTERISTICS OF PAIRED Bi(4-x)LaxTi3O12 CAPACITORS ARRAY
SUITABLE FOR 1T2C-TYPE FERAM
B.J. Koo and H. Ishiwara (Tokyo Institute of Technology)

30G-IF-15P

ON-CHIP INTEGRATION OF Pt/Ba0.7Sr0.3TiO3/Pt THIN FILM CAPACITORS
R. Liedtke* and R. Waser*,** ( *RWTH Aachen and **Forschungszentrum Jülich)

30G-IF-16P

ELECTRICAL MEASUREMENTS ON WAFER-SCALE FERROELECTRIC CAPACITORS
D. J. Jung*,**, M. Dawber*, K. N. Kim** and J. F. Scott* (*Cambridge University and**Samsung Electronic Co.)

30G-IF-17P

A MATHEMATICAL DESCRIPTION OF THE SWITCHING BEHAVIOR OF FERROELECTRIC
THIN FILMS FOR FRAM APPLICATIONS
F. Chu (Ramtron International Corporation)

30G-IF-18P

REACTIVE ION BEAM ETCHING EFFECTS ON MASKLESS PZT PROPERTIES
C. Soyer, E. Cattan and D. Rèmiens (Université de Valenciennes)

30G-IF-19P

INTEGRATION TECHNOLOGY OF INTERLAYER AND INTERMETALLIC DIELECTRICS FORHIGH DENSITY 32Mb FRAM
Y. J. Song, H. J. Joo, N. W. Jang, S. Y. Lee, H. H. Kim, Y. S. Park and K. Kim (Samsung
Electronics Co. Ltd.,)

30G-IF-20P

SbSI FILMS FOR FERROELECTRIC MEMORY APPLICATIONS
S. R. Surthi, S. Kotru and R. K. Pandey (The University of Alabama)

30G-IF-21P

HYDROGEN BARRIER ENCAPSULATION MATERIALS AND TECHNIQUES FOR THE
CONTROL OF HYDROGEN-INDUCED DEGRADATION OF FERROELECTRIC CAPACITORS
J. Celinska, S. Narayan, V. Joshi, M. Lim, Z. Chen, L. McMillan and C. A. pas de Araujo(Symetrix Corporation)

30G-IF-22P

SELF-ASSEMBLED GROWTH OF NANOSIZED SINGLE CRYSTALLINE FERROELECTRICGRAINS FOR FUTURE MEMORY APPLICATIONS - A BOTTOM UP APPROACH T. Schneller, A. Roelofs and R. Waser* (RWTH Aachen and *IFF/EKM)

30G-IF-23P

ADVANCES IN THIN FILM INTEGRATION BY SPINCVD FOR NOVEL FERROELECTRIC
MATERIALS AND DEVICES
J. D. Cuchiaro, G. S. Tompa, C. Rice and L. G. Provost (SMI)30G-IF-24P

Ka-BAND (36GHz) GUNN DIODE VOLTAGE CONTROLLED OSCILLATORS (VCO) WITH
TUNING BY FERROELECTRIC VARACTOR.
A. Kozyrev, V. Dobrov and T. Samoilova,L.Sengupta* (St. Petersburg Electrotechnical
University and *Paratek Microwave Inc.)

30G-IF-25P

Ka-BAND TUNABLE 4-POLE FILTER ON BASE OF WAVEGUIDE DIELECTRICRESONATORS.
A. Kozyrev, O. Buslov, V. Keis, D. Dovgan, P. Kulik and L. Sengupta* (St. Petersburg
Electrotechnical University and *Paratek Microwave Inc.)

30G-IF-26P

INTERFACE STATE DENSITIES OF METAL OXIDES ON SILICON FOR Pt/ SrBi2Ta2O9/
METAL OXIDE/ Si STRUCTURES
M. Lim, S. Narayan, V. Joshi, J. Celinska, Z. Chen, C. A. Paz De Araujo and L. D. McMillan(Symetrix Corporation)

30G-IF-27P

ETCHING OF SILICON-BASED FERROELECTRIC THIN FILMS FOR INTEGRATED
T.-L. Ren, L.-T. Zhang, J.-S. Liu, H.-J. Zhao, L.-T. Liu and Z.-J. Li (Tsinghua University)

30G-IF-28P

HIGH TEMPERATURE OXIDATION OF TiAlN THIN FILMS FOR MEMORY DEVICES
S. S. Park (Sangju National University)

30G-IF-29P

RELIABILITY STUDIES OF MOCVD SBT FOR HIGH DENSITY FERAM APPLICATIONS
Z. Chen, N. Solayappan, V. Joshi, M. Lim, J. Celinska, C. A. Paz de Araujo and L. D.
Mcmillan (Symetrix Corporation)

30G-IF-30P

READ/WRITE CHARACTERISTICS OF NANO SCALE FERROELECTRIC DOMAINS
S. Hong and H. Shin (Samsung Advanced Institute of Technology)

GalleryThin film - Fabrication - Pb system (II) (17:30 --- 19:00)
30H-TP2-1P

PREPARATION AND ELECTRICAL PROPERTY OF b-PVDF/PbTiO3 THIN FILMS
C. M. Wang, M. C. Kao* and Y. C. Chen* (Cheng-Shiu Institute of Technology and *National
Sun Yat-Sen University)

30H-TP2-2P

FABRICATION AND ELECTRICAL PROPERTIES OF SOL-GEL DERIVED PMNT THINFILMS WITH SINGLE PEROVSKITE PHASE
H. Fan and H.-E. Kim (Seoul National University)

30H-TP2-3P

FERROELECTRIC PROPERTIES OF PMNT THIN FILMS EPITAXIALLY GROWN ON
La-DOPED SrTiO3
K. Wasa, Y. Yamada, M. Shimoda, T. Matsuda, A. Unno, S. H. Seo*, D. Y. Noh*, H. Okino**
and T. Yamamoto** (Yokohama City Universit, *Kwangju Institute of Science and Technology
and **The National Defense Academy)

30H-TP2-4P

SOL-GEL DERIVED Pb(Sc0.5Nb0.5)O3 THIN FILMS : PROCESSING AND DIELECTRIC
PROPERTIES
B. J. Kuh, W. K. Choo, K. Brinkman*, J.-h. Kim, D. Damjanovic* and N. Setter* (KAIST and*Swiss Federal Institute of Technology)

30H-TP2-5P

THICK Pb(Ni1/3Nb2/3)O3-(Pb1-X)(Ti1-YZrY)O3 FILMS PREPARED BY
TAPE-CASTING
N.-H. Tai, Y.-M. Shen, T.-Hsu, I.-N. Lin. L.-J. Hu* and T.-S. Yeh* (National Tsing-Hua
University and *Chun-Shan Institute of Science)

30H-TP2-6P

STRUCTURAL EVOLUTION OF PEROVSKITE Pb(Mg1/3,Mb2/3)O3 THIN FILMS ON
SrTiO3 AND MgO SUBSTRATES
S. H. Seo, D. Y. Noh, Y. Yamada* and K. Wasa* (Kwangju Institute of Science and Technology
and *Yokohama City University)

30H-TP2-7P

ENHANCED MICRO-ACTUATION FOR MEMS DEVICES USING PMN-30PT THIN FILMS
D. Jenkins, E. Fribourg-Blanc*, E. Cattan* and D. Remiens* (University of Plymouth and*Université de Valenciennes)

30H-TP2-8P

COMPOSITIONALLY MODULATED Pb(Mg1/3Nb2/3)O3-PbTiO3 RELAXOR THINFILMS DEPOSITED BY PULSED EXCIMER LASER ABLATION TECHNIQUE
A. Laha, P. Victor and S. B. Krupanidhi (Indian Institute of Science)

30H-TP2-9P

DEVELOPMENT OF PMNT ELECTROSTRICTIVE THIN FILMS FOR BULK ACTUATION
E. Fribourg-Blanc*,***, E. Cattan*, D. Remiens*, D. Jenkins**, M. Dupont*** and D.
Osmont*** (*Université de Valenciennes, **University of Plymouth and ***ONERA,DMSE/MECS)

Thin film - Fabrication - SBT system(17:30 --- 19:00)

30H-TS-1P

PREPARATION OF SrBi2Ta2O9 THIN FILMS BY LIQUID-DELIVERY MOCVD WITHOUTADDITION OF SOLVENTS
N. Nukaga, H. Ono*, T. Shida*, H. Machida**, T. Suzuki** and H. Funakubo (Tokyo
Institute of Technology, *LINTEC Co., LTD and **TRI Chemical Laboratories INC.)

30H-TS-2P

DIELECTRIC RESPONSE OF EPITAXIAL SrBi2Ta2O9 THIN FILMS OBSERVED WITH
INTERDIGITAL ELECTRODES
K. Kotani, I. Kawayama and M. Tonouchi (Osaka University)

30H-TS-3P

INITIAL GROWTH OF SrBi2Ta2O9 THIN FILMS ON SrTiO3 (100) AND MgO (100)
SUBSTRATES
I. Kawayama, K. Kotani and M. Tonouchi (Osaka University)

30H-TS-4P

INFLUENCE OF Ca ON STRUCTURAL AND FERROELECTRIC PROPERTIES OF LASERABLATED SrBi2Ta2O9 THIN FILMS
R,. R.. Das, P. Bhattacharya, W. Pérez and R. S. Katiyar (University of Puerto Rico)

30H-TS-5P

THICKNESS EFFECT IN PZT THIN FILMS INVESTIGATED BY MEANS OF X-RAY
PHOTO-ELECTRON, UV PHOTO-YIELD AND PHOTO-REFLECTANCE SPECTROSCOPIES
A. I. Lerescu, M. Noda and M. Okuyama (Osaka University)

30H-TS-6P

FERROELECTRIC SrBi2Ta2O9 THIN FILMS BY AQUEOUS CHEMICAL SOLUTIONDEPOSITION
D. Nelis, D. Mondelaers, G. Vanhoyland, H. Van den Rul, M. K. Van Bael, J. Mullens, L. C.
Van Poucke, W. Laureyn* and D. J. Wouters* (Laboratory of Inorganic and Physical
Chemistry, IMO and *IMEC)

Thin film - Fabrication - BIT system(17:30 --- 19:00)

30H-TB-1P

EFFECT OF HEAT TREATMENT ON ELECTRIC PROPERTIES OF Bi4Ti3O12 THINFILMS BY TWO-DIMENSION RF MAGNETRON SPUTTERING
K. Kudoh, T. Higuchi, M. Tanaka and T. Tsukamoto (Tokyo University of Science)

30H-TB-2P

Bi3.99Ti2.97V0.03O12 FERROELECTRIC THIN FILMS PREPARED BY PULSEDLASER DEPOSITION
D.-Y. Wang*, J.-S. Zhu**, H. L.-W. Chan* and C.-L. Choy* (*The Hong Kong Polytechnic
University and ** Nanjing University)

30H-TB-3P

EFFECT OF NIOBIUM DOPING ON THE FERROELECTRIC PROPERTIES OF BISMUTH
TITANATE
Z. H. Bao, Y. Y. Yao, X. M. Lü, J. S. Zhu and Y. N. Wang (Nanjing University)

30H-TB-4P

La DOPED EFFECT ON THE FATIGUE PROPERTIES IN Bi4Ti3O12-SrBi4Ti4O15
THIN FILMS
J. S. Zhu*,**, D. Y. Wang**, H. X. Qin*, Z. H. Bao*, D. Su*, Y. Ding*, X. M. Lü*, H. L. W.
Chan** and C. L. Choy** (*Nanjing Univ. and **The Hong Kong Polytechnic Univ.)

30H-TB-5P

STRUCTURAL AND ELECTRICAL PROPERTIES OF Bi3.25La0.75Ti3O12 AND
Bi3.25Pr0.75Ti3O12THIN FILMS FOR MEMORY APPLICATIONS
D. Wu, A. Li, Z. Liu and N. Ming (Nanjing University)

30H-TB-6P

DOPING EFFECTS ON THE PROPERTIES AND MICROSTRUCTURE OF THE
INTERGROWTH Bi4Ti3O12-SrBi4Ti4O15 THIN FILMS
H. Qin and R. A. Gerhardt (Georgia Institute of Technology)

30H-TB-7P

DEPENDENCE OF METAL COMPOSITION OF BLT THIN FILMS PREPARED BY MOCVDON METALORGANIC PRECURSORSY. Tasaki, T. Tanaka*, T. Hashimoto*, T. Yamamoto*, T. Nittamachi* and S. Yoshizawa*(Toshima MFG Co. and *Meisei University)

30H-TB-8P

EFFECT OF METALORGANIC PRECURSORS ON THE MORPHOLOGY OF BLT THINFILMS PREPARED BY MOCVD
T. Tanaka, S. Yoshizawa, T. Hashimoto, T. Yamamoto, T. Nittamachi and Y. Tasaki* (Meisei
University and *Toshima MFG Co., Ltd.)

30H-TB-9P

EFFECT OF V-SUBSTITUTION ON THE FERROELECTRIC PROPERTIES OF Bi4Ti3O12
AND (Bi,M)4Ti3O12 [M = LANTHANOID] FILMS FABRICATED BY CHEMICALSOLUTION DEPOSITION TECHNIQUE.
H. Uchida, H. Yoshikawa, I. Okada, H. Matsuda*, T. Iijima*, T. Watanabe** and H.
Funakubo** (Sophia University, *AIST and **Tokyo Institute of Technology)

30H-TB-10P

MICROSTRUCTURES AND FERROELECTRIC PROPERTIES OF NIOBIUM-DOPED
Bi4Ti3O12 THIN FILMS PREPARED BY SOL-GEL METHOD
J. K. Kim, S. S. Kim, E. K. Choi, J. S. Kim and T. K. Songa, (Changwon National University)

30H-TB-11P

FERROELECTRIC PROPERTIES OF DONOR-DOPED Bi4Ti3O12 THIN FILMSPREPARED BY SOL-GEL PROCESS
S. S. Kim, J. K. Kim, E. K. Choi, B. S. Kim, J. S. Kim and T. K. Song (Changwon National
University)

30H-TB-12P

PREPARATION AND PROPERTIES OF Bi4-XLaXTi3O12 FERROELECTRIC THINFILMS USING EXCIMER UV IRRADIATION
T. Hayashi, D. Togawa, M. Yamada*, W. Sakamoto* and S. Hirano* (Shonan Institute ofTechnology and *Nagoya University)

30H-TB-13P

PREPARATION AND CHARACTERIZATION OF SITE-ENGINEERED
Bi4Ti3O12-BASDED THIN FILMS BY MOCVD
T. Watanabe, T. Kojima, T. Sakai, H. Funakubo, M. Osada, K. Saito*, Y. Noguchi** and M.
Miyayama** (Tokyo Institute of Technology, *Philips Analytical JAPAN and **University ofTokyo,)

30H-TB-14P

LARGE REMANENT POLARIZATION OF (Bi,Nd)4Ti3O12 EPITAXIAL THIN FILMSGROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
T. Kojima, T. Sakai, T. Watanabe and H. Funakubo (Tokyo Institute of Technology)

30H-TB-15P

DIRECT CRYSTALLIZATION AND CHARACTERIZATION OF Bi3TiTaO9 AND
Bi3-XLaXTiTaO9 THIN FILMS PREPARED BY MOCVD
M. Suzuki, M. Masatoshi, N. Nukaga, T. Watanabe, N. Hajime, T. Takenaka and H.
Hunakubo (Science University of Tokyo)

30H-TB-16P

ORIENTATION CONTROL OF (Bi,La)4Ti3O12 THIN FILMS BY ADDITION OF SILICATESAND GERMANATES
Y. Kawashima, T. Kijima and H. Ishiwara (Tokyo Institute of Technology)

Thin film - Fabrication - etc (I)(17:30 --- 19:00)

30H-TE1-1P

MULTI-STEP GROWTH OF ORIENTED LiNbO3 THIN FILMS
V. Bornand, I.. Huet and P. Papet (Laboratoire de Physicochimie de la Matière Condensée)

30H-TE1-2P

DIELECTRIC AND TUNABLE PROPERTIES OF Ba 0.96 Ca0.04Ti0.84
Zr0.16O3 (BCTZ) ON MgO AND SiO2/Si SUBSTRATES
T. S. Kalkur, W. C. Yi, E. Philofsky and L. Kammerdiner (University of Colorado)

30H-TE1-3P

MICROSTRUCTURAL AND SURFACE MORPHOLOGICAL EVOLUTIONS INCOMPOSITIONALLY GRADED (Ba1-xSrx)TiO3 THIN FILMS AND RELATEDDIELECTRIC PROPERTIES
X. Zhu*,**, H. L.-W. Chan*, C.-L. Choy* and K.-H. Wong* (*The Hong Kong Polytechnic
University and **Nanjing University)

30H-TE1-4P

DIELECTRIC PROPERTIES AND MICROSTRUCTURES OF Ba1-xSrxTiO3 EPITAXIAL
THIN FILMS WITH COMPOSITIONAL GRADIENTS NORMAL TO THE SUBSTRATES
X. Zhu*,**, H. L.-W. Chan**, C.-L. Choy** and K.-H. Wong* (*The Hong Kong Polytechnic
University and **Nanjing University)

30H-TE1-5P

PLANAR DIELECTRIC PROPERTIES OF COMPOSITIONALLY GRADED (Ba1-xSrx)TiO3
THIN FILMS PREPARED BY PULSED-LASER DEPOSITION
X. Zhu*,**, H. L.-W. Chan*, C.-L. Choy* and K.-H. Wong* (*The Hong Kong Polytechnic
University and **Nanjing University)

30H-TE1-6P

GROWTH OF STOICHIOMETRIC LiNbO3 THIN FILMS THROUGH METALLO-ORGANICDECOMPOSITON PROCESS
H. Zhang, X. Wang and T. A. Rabson (Rice University)

30H-TE1-7P

LOW-TEMPERATURE PREPARATION OF FERROLECTRIC Ba2NaNb5O15 THIN FILMS
BY PULSED LASER DEPOSITION
K. Ohnuki, M. Takayasu, T. Higuchi and T. Tsukamoto (Tokyo University of Science)

30H-TE1-8P

HETEROEPITAXIAL GROWTH OF MgO THIN FILMS ON Al2O3(00・1) BY
METALORGANIC CHEMICAL VAPOR DEPOSITION
W. I. Park, D. H. Kim and G.-C. Yi (Pohang University of Science and Technology)

30H-TE1-9P

PREPARATIOIN OF BARIUM STRONTIUM TITANATE THIN FILM BY SPRAY DEPOSITION
Y. Takeshima, K. Nishita, K. Tanaka and Y. Sakabe (Murata Mfg. Co., Ltd.,)

30H-TE1-10P

EFFECTS OF SBN SELF-TEMPLATE LAYER ON THE STRUCTURAL PROPERTIES OF
SOL-GEL DERIVED Sr0.6Ba0.4Nb2O6 FILMS
A. -D. Li*,**, C. L. Mak**, K. H. Wong**, M. M. T. Ho***, M. K. Yeung**, D. Wu* and N.
-B. Ming* (*Nanjing University and **The Hong Kong Polytechnic University)

30H-TE1-11P

FORMATION OF EPITAXIAL BaTiO3/SrTiO3 MULTILAYERS GROWN ON Nb-DOPEDSrTiO3 (001) SUBSTRATES
A. Visinoiu, M. Alexe, H. N. Lee, D. N. Zakharov, D. Hesse and U. Gösele (Max Planck
Institute of Microstructure Physics)

30H-TE1-12P

DIELECTRIC AND PYROELECTRIC PROPERTIES OF FERROELECTRIC THIN FILMS
M. D. Glinchuk, E. A. Eliseev and V. A. Stephanovich (NASc of Ukraine and *Opole
University)

30H-TE1-13P

GROWTH MORPHOLOGY AND CRYSTAL ORIENTATION OF KNbO3 ON SrTiO3 BY
LIQUID PHASE EPITAXY
K. Kakimoto, S. Ito, I. Masuda, N. Adachi, H. Ohsato and T. Okuda (Nagoya Institute ofTechnology)

30H-TE1-14P

CRYSTAL GROWTH AND INTERFACIAL CHARACTERIZATION OF DIELECTRIC BaZrO3
THIN FILMS ON Si SUBSTRATES
Y. Kitano, T. Matsui, N. Fujimura, K. Morii and T. Ito (Osaka Prefecture University)

30H-TE1-15P

SYNTHESIS OF HIGH DIELECTRIC CONSTANT TITANIUM OXIDE THIN FILMS BY
METALORGANIC DECOMPOSITION
S. Maeda, K. M. A. Salam, H. Fukuda and S. Nomura (Muroran Institute of Technology)

30H-TE1-16P

EFFECTS OF ADDITIVE ELEMENTS ON IMPROVEMENT OF THE DIELECTRIC
PROPERTIES OF Ta2O5 FILMS FORMED BY METALORGANIC DECOMPOSITIONK. M. A. Salam, H. Fukuda and S. Nomura (Muroran Institute of Technology)

30H-TE1-17P

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF (Ba,Sr)TiO3 THIN FILMSPREPARED BY A SOL-GEL METHOD
T.-L. Ren, X.-N. Wang, J.-S. Liu, H.-J. Zhao, T.-Q. Shao, L.-T. Liu and Z.-J. Li (Tsinghua
University)

30H-TE1-18P

FERROELECTRIC CHARACTERIZATION OF Bi MODIFIED YMnO3 THIN FILMS GROWN
BY PULSED LASER DEPOSITION FORMETAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR (MFIS) STRUCTURE.
T. Choi, S. H. Shin, Y. S. Kim and J. Lee (Sung Kyun Kwan Univ.)

30H-TE1-19P

FABRICATION AND CHARACTERISTIC OF Mn(II)- AND Mn(IV)-DOPED BST THIN FILMS
J.-B. Bao, T.-L Ren, J.-S. Liu, X.-N. Wang, L.-T. Liu and Z.-J. Li (Tsinghua University)

30H-TE1-20P

FERROELECTRIC NaXK(1-X)NbO3 THIN FILMS ON SINX/SI SUBSTRATES BYMETAL ORGANIC CHEMICAL VAPOR DEPOSITION
C.-R. Cho (The Ångström Laboratory)

5/31 (Fri.)
Oral
Noh Theatre
Thin Films (VII)(9:00 --- 10:30)

31A-TF7-1IN
9:00<INVITED> CHEMICAL APPROACH USING TAILORED LIQUID SOURCES TO
TRADITIONAL AND NOVEL FERROELECTRIC THIN FILMS
K. Kato* **, K. Suzuki*, D. Fu*, K. Nishizawa* and T. Miki* (*National Institute ofAdvanced Industrial Science and Technology and **Tokyo Institute of Technology)

31A-TF7-2C
9:30

ANNEALING TEMPERATURE DEPENDENCE OF CRYSTALLINITY, STRAIN, AND MEMORYEFFECTS OF SrBi2Ta2O9 /SiN/Si STRUCTURE
J.-P. Han,
C. J. Xie, K.-H. Kim , C. C. Broadbridge*, D. L. Pechkis*, Y. X. Liu, W. Tong, A.
H. Lehman** and T. P. Ma (Yale University, *Southern Connecticut State University and**Trinity College)

31A-TF7-3C
9:45

OXYGEN BARRIER FOR STACKED SBT-FECAP ON W-PLUG
J. Lisoni, D. Maes, J.-L. Everaert, J. Johnson, V. Paraschiv, L. Haspeslagh, D. J. Wouters, P.
Casella*, C. Corvasce*, R. Zambrano*, H. Monchoix** and L. V. Autryve** (IMEC,*STMicroelectronics and **Applied Materials France)

31A-TF7-4C
10:00

EFFECT OF CATION SUBSTITUTION ON THE CRYSTALLIZATION KINETICS OF SOL-GELDERIVED SBT THIN FILMS
W.-C. Kwak, S.-Y. Jung, G. M. A. Kumar, S.-J. Hwang and Y.-M. Sung (Daejin University)

31A-TF7-5C
10:15

LOW TEMPERATURE CRYSTALLIZATION OF SrBi2Ta2O9 (SBT) IN THE ULTRA THIN
FILM REGION FABRICATED BY MOCVD
K. Uchiyama, S. Narayan*, Y. Shimada**, L. McMillan* and C. A. Paz de Araujo*(Panasonic Semiconductor Development Company, *Symetrix CorpSymetrix Corp and**Matsushita Electronics Corp.)

Thin Films (VIII) (11:00 --- 12:30)
31A-TF8-1C
11:00

BIAS SPUTTERING AS A TOOL FOR PROCESSING TEXTURED FERROELECTRIC FILM
M. Maglione and J. P. Manaud (ICMCB-CNRS)

31A-TF8-2C
11:15

CHARACTERIZATION OF SOL-GEL DERIVED Bi4-xLaxTi3O12 FILMS
N. Sugita, T. Suzuki, E. Tokumitsu and M. Osada (Tokyo Institute of Technology)

31A-TF8-3C
11:30

DIELECTRIC PROPERTIES OF CaCu3Ti4O12 THIN FILM
K. Y. Cho, N. J. Wu and A. Ignatiev (University of Houston)

31A-TF8-4C
11:45

PREPARATION AND APPLICATION OF PZT THIN FILMS DEPOSITED BY HYBRIDPROCSESS: SOL-GEL METHOD AND LASER ABLATION
J. W. Wan, J.-J. Tsaur, Z. J. Wang* and R. Maeda (National Institute of Advanced Science andTechnology and *Tohoku University)

31A-TF8-5C
12:00

STRESS INDUCED PHASE TRANSFORMATIONS IN (001) MOCVD-GROWN PZT THIN
FILMS
M. B. Kelman and P. C. McIntyre (Stanford University)

31A-TF8-6C
12:15

PREPARATION OF FERROELECTRIC Ba(Ti0.85Sn0.15)O3 THIN FILMS BY
METAL-ORGANIC DECOMPOSITION
T. Miyamoto, S. Murakami, K. Inoue, Y. Suzuki, T. Nomura*, M. Noda** and M. Okuyama**(Technology Research Institute of Osaka Prefecture, *Ritsumeikan University and **Osaka
University)

Thin Films (IX) (13:30 --- 15:15)
31A-TF9-1IN
13:30<INVITED> FERROELECTRIC LEAD ZIRCONATE TITANATE THIN FILMS SYNTHESIZEDVIA A HIGH-PRESSURE CRYSTALLIZATION PROCESS
C.-H. Lu and Y.-C. Sun (National Taiwan University)

31A-TF9-2C
14:00

RF-MAGNETRON SPUTTERED FERROELECTRIC (Na,K)NbO3 FILMS
M. Blomqvist, J.-H. Koh, S. I. Khartsev and A. M. Grishin (Royal Institute of Technology)

31A-TF9-3C
14:15

A NEW CLASS OF FERROELECTRICS SUITABLE FOR 0.5 V OPERATION OF
NON-VOLATILE RANDOM ACCESS MEMORY
T. Kijima*,** and H. Ishiwara** (*R&D Association for Future Electron Devices and**Tokyo Institute of Technology)

31A-TF9-4C
14:30

HIGH FREQUENCY LIMM- A POWERFUL TOOL FOR FERROELECTRIC THIN-FILM
CHARACTERIZATION
T. Sandner, G. Suchaneck, R. Koehler and G. Gerlach (Dresden University of Technology)

31A-TF9-5C
14:45

INVESTIGATION OF THE THERMAL STABILITY OF Pb5Ge3O11 THIN FILMS AND
METHODS OF IMPROVEMENT
F. Zhang, W. Zhuang and S. T. Hsu (Sharp Labs of America, Inc)

31A-TF9-6C
15:00

CHARACTERIZATION OF RHOMBOHEDRAL (111) AND (100) LEAD ZIRCONATE
TITANATE FILMS FABRICATED BY RF MAGNETRON SPUTTERING
T. Fujii and M. Adachi (Toyama Prefectural University)

Reception Hall
Piezoelectrics (V)(9:00 --- 10:30)

31B-PI5-1IN
9:00<INVITED> THE DEVELOPMENT OF NEW HIGH PERFORMANCE MECHANICAL ELECTROMECHANICAL ACTUATORS
R. W. Schwartz and M. Narayanan (Clemson University)

31B-PI5-2C
9:30

A 35MHz LINEAR ULTRASONIC ARRAY FOR MEDICAL IMAGING
J. M. Cannata, T. R. Shrout and K. K. Shung (Pennsylvania State University)

31B-PI5-3C
9:45

PIEZOELECTRIC TRANSFORMER FOR 30W OUTPUT AC-DC CONVERTERS
M. Yamamoto, Y. Sasaki, T. Inoue, A. Ochi and S. Hamamura* (NEC Corporation and *NECEngineering Ltd.)

31B-PI5-4C
10:00

DESIGN OF A 50 MHz ANNULAR ARRAY USING FINE-GRAIN LEAD TITANATE
K. A. Snook, T. R. Shrout and K. K. Shung (Pennsylvania State University)

31B-PI5-5C
10:15

PERFORMANCE ENHANCEMENT OF TUNABLE BANDPASS FILTERS USING
SELECTIVELY ETCHED FERROELECTRIC THIN FILMS
F. Miranda, C. Mueller, F. Van Keuls, R. Romanofsky, G. Subramanyam* and S.
Vignesparamoorthy* ( NASA and *University of Dayton)

Pyroelectrics(11:00 --- 12:30)

31B-PY-1C
11:00

HIGH PERFORMANCE PST THIN FILMS ON POLYSILICON SACRIFICIAL LAYERS FOR
UNCOOLED IR DETECTOR ARRAYS
C. J. Anthony, M. A. Todd, P. P. Donohue and M. A. C. Harper (Camera Technologies
Group, Imaging Dept)

31B-PY-2C
11:15

PYROELECTRIC BARIUM STRONTIUM TITANATE THIN FILMS FOR UNCOOLEDTHERMAL IMAGING
J.-G. Cheng*,**,***, J. Tang* and J.-H. Chu* (*Chinese Academy of Sciences, **Shandong
University and ***Corporate Technology)

31B-PY-3C
11:30

THERMAL ANALYSIS OF PYROELECTRIC INFRARED SENSORS FABRICATED BY A
FLIP-CHIP TRANSFER METHOD
W. G. Liu, L. L. Sun, W. Zhu and O. K. Tan (Nanyang Technological University)

31B-PY-4C
11:45

THERMAL ANALYSIS OF PYROELECTRIC SENSORS IN SCANNING THERMALMICROSCOPY
W.-M. Lin, G. Suchaneck, R. Koehler and G. Gerlach (Dresden University of Technology)

31B-PY-5C
12:00

PYROELECTRIC CHARACTERIZATION OF THIN FILM PZT-Si STRUCTURES WITHQUADRANT-DIAGONAL ELECTRODE SYSTEM AS AN ELEMENT OF POSITIONSENSITIVE IR-DETECTOR
S. L. Bravina, E. Cattan*, N. V. Morozovsky, E. Fribourg-Blanc* and D. Remiens* (NASU
and *Université de Valenciennes)

31B-PY-6C
12:15

ELECTRICAL PROPERTIES OF Er-DOPED BaTiO3 CERAMICS FOR PTCR
M. Viviani, M. T. Buscaglia, V. Buscaglia, L. Mitoseriu*,**, A. Testino* and P. Nanni* (Viade Marini 6, *Univ. of Genoa and **"Al. I. Cuza" Univ.)

Piezoelectrics (VI) (13:30 --- 15:15)
31B-PI6-1IN
13:30<INVITED> PHASE DEVELOPMENT AND ELECTRICAL PROPERTIES OF
Pb(Yb1/2Nb1/2)O3-PbTiO3 EPITAXIAL FILMS
T. Yoshimura and S. T.-McKinstry (The Pennsylvania State University)

31B-PI6-2C
14:00

HYSTERESIS PROPERTIES OF PZT THIN-FILM BULK ACOUSTIC RESONATORS
R. Gabl, M. Schreiter, R. Primig, D. Pitzer and W. Wersing (Siemens AG, Corporate
Technology)

31B-PI6-3C
14:15

FABRICATION AND RESONANT BEHAVIOR OF PZT THICK FILM CANTILEVER FOR
BIOCHIP
H. J. Kim*, Y.-B. Kim*, **, J.-Y. Kang* and T. S. Kim* (*KIST and ** Yonsei University)

31B-PI6-4C
14:30

ULTRASONIC PHASED ARRAY MICRO SENSOR USING PIEZOELECTRIC PZT THIN FILM
AND RESONANT FREQUENCY TUNING BY POLING
K. Yamashita*, T. Fukunaga*, M. Okuyama*, S. Aoyagi** and Y. Suzuki*** (*Osaka
University, **Kansai University and ***Technology Research Institute of Osaka Prefecture)

31B-PI6-5C
14:45

INTEGRATION OF PIEZOELECTRIC PZT THIN FILMS WITH INTERNAL ELECTRODESINTO AN ACTUATOR STRUCTURE FOR MEMS APPLICATIONS
M. Hoffmann, C. Kügeler, U. Böttger and R. Waser* (IWE II, RWTH Aachen and *IFF,
Research Laboratories Juelich)

31B-PI6-6C
15:00

FUNCTIONALLY GRADIENT PIEZOELECTRIC CERAMICS FOR ULTRASONIC
TRANSDUCERSS. Takahashi, N. Miyamoto and N. Ichinose (Waseda University)

Conference Room 1
Characterization (V) (9:00 --- 10:30)
31C-CH5-1C
9:00

PBTIOX NANOTUBE OBSERVED BY ELECRTON MICROSCOPY
J. Zhu, X. Zhu, K. Yang, Q. Li, G. Ma, Z. Liu and N. Ming (Nanjing University)

31C-CH5-2C
9:15

INVESTIGATION OF THE ELECTRICAL TUNABILITY OF SILVER-NIOBATE-TANTALATETHICK FILMS
F. Zimmermann, W. Menesklou and E. I.-Tiffée (Universität Karlsruhe)

31C-CH5-3C
9:30

DOPING EFFECTS IN LAYER STRUCTURED Bi4Ti3O12 FERROELECTRICS: LATTICEDYNAMICS AND PROPERTY DESIGN INVESTIGATED BY RAMAN SPECTROSCOPY
M. Osada* **, M. Kakihana**, Y. Noguchi***, M. Miyayama***, T. Watanabe** and H.
Funakubo** (*JST, **Tokyo Institute of Technology and ***The University of Tokyo)

31C-CH5-4C
9:45

NON-LINEAR DIELECTRIC PROPERTIES OF BaTiO3/SrTiO3 SUPERLATTICE
L. Kim, J. Kim, D. Jung, Y. S. Kim and J. Lee (Sung Kyun Kwan University)

31C-CH5-5C
10:00

INVESTIGATION ON THE POLYETHERKETONE POLED POLYMER WITH HIGHLY
THERMAL STABILITY FOR ELECTRO-OPTICAL APPLICATION
Q. Pan, C. Fang, Z. Qin, W. Shi, Q. Gu and X. Wu, (Shandong University)31C-CH5-6C
10:15

DYNAMICAL ASPECTS OF RETENTION AND ITS RELATION TO FATIGUE IN
FERROELECTRIC THIN FILMS
B. S. Kang*, J. -G. Yoon*,**, T. K. Song***, S. Seo*, Y. W. So and T. W. Noh* (*.Seoul
National University, **University of Suwon and ***Changwon National University)

Characterization (VI) (11:00 --- 12:30)
31C-CH6-1IN
11:00<INVITED> FERROIC GLASS CERAMICS
Y. Xi (Tongi Univ.)

31C-CH6-2C
11:30

LITERALLY TWO-DIMENSIONAL FERROELECTRICITY PROBED BY SHG IN
FERROELECTRIC LB MONOLAYERS
T. V. Murzina, Y. G. Fokin, T. V. Misuryaev, O. A. Aktsipetrov, S. P. Palto* and S. G. Yudin*(Moscow State University and *Russian Academy of Sciences)

31C-CH6-3C
11:45

SIMULTANEOUS MEASUREMENT OF SPECIFIC HEAT CAPACITY, THERMALCONDUCTIVITY AND THERMAL DIFFUSIVITY OF FERROELECTRIC CERAMICS BY
THERMAL RADIATION CALORIMETRY
K. Morimoto, A. Uematsu, S. Sawai, K. Hisano and T. Yamamoto (National Defense
Academy)

31C-CH6-4C
12:00

EFFECT OF COPPER SUBSTITUTION ON THE DIELCTRIC AND MAGNETIC PROPERTIESOF LOW-SINTERED Z-TYPE HEXAFERRITES
X. Wang, J. Zhou, S. Su, Z. Gui and L. Li (Tsinghua University)

31C-CH6-5C
12:15

DIELECTRIC SPECTRA ANOMALIES IN NANOMATERIALS
A. V. Ragulya, M. D. Glinchuk, A. M. Slipenyuk, A. N. Morozovskaya, I. P. Bykov, A. V.
Polotai, V. P. Klimenko, V. V. Skorokhod and C. A. Randall* (NASc of Ukraine and*Pennsylvania State University)

High-k and Gate Oxides(13:30 --- 15:15)

31C-FE-1IN
13:30<INVITED> HIGH K GATE DIELECTRICS FOR THE SILICON INDUSTRY
L. Manchanda (Agere Systems)

31C-FE-2C
14:00

FABRICATION AND CHARACTERIZATION OF AlN THIN FILMS AS GATE DIELECTRICS
FOR SILICON DEVICES
J. H. Song*, T. Chikyow**, Y. Z. Yoo**, P. Ahmet**, K. Nakajima**, T. Naruke**, Y.
Matsumoto* and H. Koimuna*,** (* Tokyo Institute of Technology and **National Institutefor Materials Science)

31C-FE-3C
14:15

PREPARATION BY PULSED LASER DEPOSITION AND CHARACTERIZATION OF ZrO2,
HfO2 and PrOx THIN FILMS FOR HIGH-k GATE INSULATOR
T. Kanashima, S. Kitai, M. Sohgawa, H. Kanda and M. Okuyama (Osaka University)

31C-FE-4C
14:30

Al2O3/Si3N4 STACKED INSULATOR FOR ADVANCED MOS FETS
Y. Fujisaki and H. Ishiwara (Tokyo Institute of Technology)

31C-FE-5C
14:45

HAFNIUM NITRATE PRECURSOR SYNTHESIS AND HAFNIUM OXIDE THIN FILM
PROPERTIES
W. Zhuang*, J. F. Conley Jr.*, Y. Ono*, D. R. Evans** and R. Solanki** (*Sharp
Laboratories of America and **Oregon Graduate Institute)

31C-FE-6C
15:00

ELECTRICAL PROPERTIES OF HfO2 GATE DIELECTRIC GROWN BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION IN THE ABSENCE OF OXYGEN
K.-J. Choi, W.-C. Shin, J.-B. Park and S.-G. Yoon (Chungnam National University)

Conference Room 3
Device Integration
31D-DE-1C
9:00(9:00 --- 10:30)

A CONSTANT REFERENCE BIT-LINE VOLTAGE DATA SENSING TECHNIQUE WITHOUTREFERENCE CELL FOR 1T1C FERAMS
S. Kim, J. S. Kim, I. K. You*, W. J. Lee*, B. G. Yu* and H. Maes** (Wonkwang University
and *ETRI, **STDI, IMEC)31D-DE-2C
9:15

INTEGRATION OF FERAM DEVICES INTO A STANDARD CMOS PROCESS: IMPACT OF
FERROELECTRIC ANNEALS ON CMOS-CHARACTERISTICS
M. Röhner, T. Mikolajick, R. Hagenbeck and N. Nagel (Infineon Technologies)

31D-DE-3C
9:30

HIGH TEMPERATURE ETCHING OF PZT CAPACITOR FOR FeRAM
M. Endo, M. Ueda, N. Hirai, S. Ishiwatari, H. Fujimoto, K. Watanabe K. Suu, M. Ishikawa, J.
Fujiyama, K. Suezawa*, H. Kikuchi*, G. Komuro*, S. Mihara* and T. Yamazaki* (ULVAC,
Inc. and *FUJITSU LIMITED)

31D-DE-4C
9:45

HIGH TEMPERATURE PLASMA ETCHING CHARACTERISTICS OF SUB-MICRON
Ir/PZT/Ir FERROELECTRIC CAPACITOR STACKS
S. Marks, L. G. Jerde, F. G. Celii*, S. A. Aggarwal* and J. S. Martin* (Tegal Corporation
and *Texas Instruments)

31D-DE-5C
10:00

ELECTRICAL PROPERTIES OF NONVOLATILE LATCHS FOR NEW LOGIC APPLICATION
Y. Fujimori, T. Nakamura and H. Takasu (ROHM Co.Ltd.)

31D-DE-6C
10:15

OXYGEN DIFFUSION BARRIERS FOR HIGH-DENSITY FERAMS
B. K. Moon, C. U. Pinnow, K. Imai*, O. Arisumi*, H. Itokawa*, K. Hornik, K. Tsutsumi*, A.
Hilliger, I. Kunishima*, N. Nagel, K. Yamakawa* and G. Beitel ( Infineon Technologies
Corp., *Toshiba Corp. Semiconductor Company)

Microwave Devices(11:00 --- 12:30)

31D-MW-1IN
11:00<INVITED> MICROWAVE TUNABLE COMPONENTS AND SUBSYSTEMS BASED ON
FERROELECTRICS: PHYSICS AND PRINCIPLES OF DESIGN
O. G. Vendik (Elecrotechnical University)

31D-MW-2C
11:30

ENHANCED DIELECTRIC PROPERTIES OF (Ba,Sr)TiO3 THIN FILMS APPLICABLE TO
TUNABLE MICROWAVE DEVICES
B. H. Park and Q. Jia* (Konkuk University and *Los Alamos National Laboratory)

31D-MW-3C
11:45

APPEARANCE MECHANISM OF MICROWAVE DIELECTRIC PROPERTY CORRELATEDWITH CRYSTAL STRUCTURE
H. Ohsato, Y. Futamata, K. Kakimoto and S. Nishigaki* (Nagoya Institute of Technology and*Robert Bosch GmbH)

31D-MW-4C
12:00

THE INTERPLAY BETWEEN THIN FILM FERROELECTRIC MICROSTRUCTURE AND
PHASE SHIFTER PERFORMANCE
C. Mueller, F. V. Keuls, F. Miranda and R. Romanofsky (NASA)

31D-MW-5C
12:15

TUNABLE INTEGRATED PASSIVE CIRCUITS USING BST THIN FILMS
B. Acikel, H. Xu, J. Serraiocco, T. R. Taylor, P. J. Hansen, J. S. Speck and R. A.York(University of California)

Dielectrics (II) (13:30 --- 15:15)
31D-DI2-1IN
13:30<INVITED> EFFECT OF OCCUPATIONAL SITES OF RARE-EARTH ELEMENTS ON THE
CURIE POINT IN BaTiO3
H. Kishi, N. Kohzu, N. Ozaki*, H. Ohsato* and T. Okuda* (Taiyo Yuden Co., Ltd and*Nagoya Institute of Technology)

31D-DI2-2C
14:00

THE ROLE OF GRAIN BOUNDARIES ON THE HIGH TEMPERATURE CONDUCTION
BEHAVIOR OF TITANATE THIN FILMS AND NANOCRYSTALLINE CERAMICS
C. Ohly, S. Hoffmann-Eifert and R. Waser (Institut für
Festkörperforschung-Elektrokeramische Materialien Forschungszentrum Jülich)

31D-DI2-3C
14:15

DIELECTRIC PROPERTIES OF BaTiO3 BASED CERAMICS UNDER HIGH ELECTRIC
T. Tsurumi, H. Adachi, H. Kakemoto, S. Wada, H. Chazono* and H. Kishi* (Tokyo Instituteof Technology and *Taiyo Yuden Co., Ltd.)

31D-DI2-4C
14:30

DIELECTRIC PROPERTIES OF Ba (Mg1-XTaX)-BaMg1-XNbX) CERAMICS
MEASURED BY TERAHERTZ AND FAR-INFRARED SPECTROSCOPY
I.-N. Lin, Y.-C. Chen*, H.-F. Cheng*, T.-R. Tsai and C.-C. Chi (National Tsing-Hua
University and * National Taiwan Normal University)

31D-DI2-5C
14:45

PHASE EVOLUTION AND MICROWAVE DIELECTRIC PROPERTIES OF(BaSr)O-Sm2O3-TiO2 CERAMICS.
T. J. Kim, J.-J. Kim* and H. Y. Lee (Yeungnam University and *Kyungpook National
University)

31D-DI2-6C

NEW DIELECTRIC MATERIAL SYSTEM WITH HIGH TEMPERATURE OXIDESUPERCONDUCTOR
S. Sugihara, T. Kawashima, C. Ishizuka and Y. Yutoh (Shonan Institute of Technology)

15:00

PosterConference Room 2
Single Crystals (Growth, Properties) (15:45 --- 17:15)
31E-SC-1P

HIGH CURIE TEMPERATURE, HIGH PERFORMANCE PEROVSKITE SINGLE CRYSTALS
S. Zhang, C. A. Randall and T. R. Shrout (Pennsylvania State University)

31E-SC-2P

LINEAR AND SECOND-ORDER NONLINEAR OPTICAL DIELECTRIC BEHAVIORS OF
LITHIUM NIOBATE SINGLE CRYSTALS AT HIGH TEMPERATURES
D. Xue, K. Kurimura* and K. Kitamura (AML/NIMS and *NML/NIMS)

31E-SC-3P

INFLUENCE OF TEMPERATURE ON THE STRUCTURE AND CHARGE DISTRIBUTION OF
LITHIUM NIOBATE SINGLE CRYSTALS
D. Xue, N. Iyi and K. Kitamura ((AML/NIMS))

31E-SC-4P

SURFACE ACOUSTIC WAVE BAND-PASS FILTERS OF AlN THIN FILMS SPUTTERED ON
LiNbO3 SUBSTRATES
K. S. Kao, C. C. Cheng*, Y. C. Chen and C. H. Chen (National Sun Yat-Sen University and*De Lin Institute of Technology)

31E-SC-5P

TEMPERATURE CHARACTERISTICS FOR SURFACE ACOUSTIC WAVE IN ANNEALEDPROTON-EXCHANGED LiNbO3 WAVEGUIDES
C.-C. Cheng and Y.-C. Chen* (De Lin Institute of Technology and *National Sun Yat-Sen
University)

31E-SC-6P

GROWTH OF PIEZOELECTRIC Ca3NbGa3Si2O14 SINGLE CRYSTALS FOR SAWAPPLICATIONS
M. Adachi, T. Funakawa and T. Karaki (Toyama Prefectural University)

31E-SC-7P

SINGLE CRYSTAL Pb[(Zn1/3Nb2/3)0.93Ti0.07] O3 (PZNT 93/7) FORULTRASONIC TRANSDUCERS
K. Harada, Y. Hosono and Y. Yamashita (Toshiba Corp.)

31E-SC-8P

DIRECT GROWTH OF ORTHORHOMBIC POTASSIUM NIOBATE CRYSTAL
R. Komatsu, K. Adachi and K. Ikeda (Yamaguchi University)

31E-SC-9P

DIELECTRIC PROPERTIES AND PHASE TRANSITIONS OF <001>-ORIENTED
Pb(Zn1/3Nb2/3)O3-PbTiO3 SINGLE CRYSTALS
W. Ren, S.-F. Liu and B. K. Mukherjee (Royal Military College of Canada)

31E-SC-10P

DC BIAS DEPENDENCE OF THE PIEZOELECTRIC PROPERTIES OF <111> ORIENTED
Pb(Zn1/3Nb2/3)O3-PbTiO3 SINGLE CRYSTALS
S.-F. Liu, W. Ren, B. K. Mukherjee, S. J. Zhang* and T. R. Shrout* (Royal Military College ofCanada and *The Pennsylvania State University)

31E-SC-11P

CHARACTERIZATION STUDY OF THE GROWTH AND ELECTROMECHANICALPROPERTIES OF 67PMN-33PT SINGLE CRYSTALS
C. B. DiAntonio, S. M. Pilgrim, W. A. Schulze and F. A. Williams Jr. (Alfred University)

31E-SC-12P

PMN-PT SINGLE CRYSTAL GROWTH BY TEMPLATED GRAIN GROWTH (TGG) AND
FUSED DEPOSITION OF CERAMICS (FDC) TECHNIQUES
R. Brennan, M. Allahverdi and A. Safari (Rutgers University)

31E-SC-13P

PIEZOELECTRIC PROPERTIES OF KNbO3 IN VARIOUS CRYSTAL ORIENTATIONS BY
T. Yamamoto, H. Okino, E. Matsuzaki and Y. Yamashita (National Defense Academy)31E-SC-14P

LINEAR AND NONLINEAR DIELECTRIC RESPONSES OF Sr0.61Ba0.39Nb2O6
SINGLE CRYSTAL
J.-H. Ko and S. Kojima (University of Tsukuba)

31E-SC-15P

LONG-RANGE DISPLACIVE TO SHORT-RANGE ORDER-DISORDER CROSSOVER INWEAKLY CONCENTRATED KtayNb1-yO3.
V. A. Trepakov* **, S. A. Prosandeev***, M. S. Savinov****, P. Galinetto*****, G.
Samoggia*****, S. E. Kapphan*, L. Jastrabik****, L. A. Boatner****** (*University ofOsnabrück,**A.F. Ioffe Physical-Technical Institute, ***Rostov State University, ****Instituteof Physics AS CR, ***** “A. Volta”, Università di Pavia and INFM and ******Oak Ridge
Nat. Lab.)

31E-SC-16P

PHASE TRANSFORMATION BEHAVIOR OF SINGLE CRYSTAL PMN-PT
A. Sehirlioglu, P. Han and D. A. Payne (University of Illinois)

31E-SC-17P

X-RAY-INDUCED MODIFICATION OF LITHIUM TANTALATE AND LITHIUM NIOBATE
V. Shur, E. Blankova, E. Nikolaeva, E. Shishkin, A. Barannikov, L. Lvova, L. Yurchenko*, R.
Route**, M. Fejer** and R. Byer** (Ural State University, *The Ural Division of the RAS and** Stanford University)

31E-SC-18P

CRYSTAL GROWTH AND SOME PROPERTIES OF LEAD INDIUM NIOBATE-LEAD
TITANATE SINGLE CRYSTALS PRODUCED BY SOLUTION BRIDGMAN METHOD
N. Yasuda, N. Mori, T. Takasaki, H. Ohwa, H. Yosono*, Y. Yamashita*, M. Iwata**, M.
Maeda**, I.. Suzuki** and Y. Ishibashi*** (Gifu University, *Toshiba Corporation,**Nagaya Institute of Technology and ***Aichi Shukutoku University)

31E-SC-19P

DOMAIN ENGINEERING OF MONOCLINIC 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3
SINGLE CRYSTALS AND PIEZOELECTRIC RELATED PROPERTIES
A. Renault*,**, H. Dammak*, M. Pham Thi**, P. Gaucher** and G. Calvarina*(*Laboratoire Structures, Propriétés et Modélisation des Solides, Ecole Centrale and**THALES Research & Technology-France)

31E-SC-20P

GROWTH AND CHARACTERIZATION OF PIEZOELECTRIC PZN-PT 91/9 AND PMN-PT
65/35 SINGLE CRYSTALS FOR ULTRASONIC TRANSDUCERS
J. Santailler, B. Ferrand, M. Couchaud, P. Dusserre, S. Mibord and T. Abad. (CEAGRENOBLE, DRT/DTEN and LETI-DOPT)

31E-SC-21P

MORPHOTROPIC PHASE BOUNDARY AND RELATED PROPERTIES OF RELAXORPIEZOELECTRIC SINGLE CRYSTALS
Z.-G. Ye and A. A. Bokov (Simon Fraser University)

31E-SC-22P

TOP-SEEDED SOLUTION GROWTH AND CHARACTERIZATION OFPIEZO-/FERROELECTRIC PZN-PT AND PMN-PT SINGLE CRYSTALS
W.-Z Chen and Z.-G. Ye (Simon Fraser University)

31E-SC-23P

CRYSTAL GROWTH AND ELECTRICAL PROPERTIES OF LEAD-FREE PIEZOELECTRIC
MATERIAL Na0.5Bi2.5Nb2O9
R. Aoyagi, H. Takeda, S. Okamura and T. Shiosaki (Nara Institute of Science and Technology(NAIST))

31E-SC-24P

SEEDED GROWTH OF RELAXOR FERROELECTRIC SINGLE CRYSTAL
Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 BY THE VERTICAL BRIDGMAN METHOD
J. Y. Xu, J. Tong, M. L. Shi and S. J. Fan (Chinese Academy of Sciences)

31E-SC-25P

CHEMICAL VARIATION IN Pb(Mg1/3Nb2/3)O3-PbTiO3 SINGLE CRYSTALS AND
CERAMICS
S. P. McBride and A. J. Bel (University of Leeds)

Microwaves (II) (15:45 --- 17:15)
31E-MW2-1P

STRUCTURAL EVOLUTION AND DIELECTRIC PROPERTIES OF SOL-GEL (Ba,Sr)TiO3
THIN FILMS FOR MICROWAVE DEVICES
X. F. Chen, W. Zhu, S. Y. Lim* and O. K. Tan (Nanyang Technological University and *DSONational Laboratories)

31E-MW2-2P

EFFECT OF A-SITE SUBSTITUTION BY Nd3+ ON THE MICROWAVE DIELECTRIC
PROPERTIES OF (PbCa)(FeNb)O3 CERAMICS
Q. H. Yang, E. S. Kim*, J. Xu** and Z. Y. Meng (Shanghai University, *Kyonggi University
and **Chines Academy of Sciences)

31E-MW2-3P

STUDY ON DIELECTRIC FREQUENCY RESPONSE OF MICROWAVE
Bi2(Zn1/3Nb2/3)2O7 THIN FILMS
H.-F. Cheng, Y.-C. Chen, H.-L. Liu, L.-G. Hwa* and I. N. Lin** (National Taiwan Normal
University, *Fu-Jen catholic University and **National Tsing-Hua University)

31E-MW2-4P

INVESTIGATION OF ELECTRICAL DEGRADATION EFFECTS IN FERROELECTRIC THIN
FILM BASED TUNABLE MICROWAVE COMPONENTS
K. Astafiev, V. Sherman, A. Tagantsev, N. Setter, T. Rivkin* and D. S. Ginley* (Swiss Federal
Institute of Technology and *National Renewable Energy Laboratory)

31E-MW2-5P

TUNABLE DIELECTRIC PROPERTIES OF BST THIN FILMS FOR RF/MW PASSIVECOMPONENTS
J. Bellotti, E. K. Akdogan and A. Safari (Rutgers University)

31E-MW2-6P

MICROWAVE PROPERTIES OF COMPSITIONALLY GRADED (Ba, Sr)TiO3 THIN FILMSFOR ELECTRICALLY TUNABLE MICROWAVE DEVICES
S.-J. Lee, Y.-T. Kim, S.-E. Moon, W.-J. Kim and E.-K. Kim (Electronics andTelecommunications Research Institute)

31E-MW2-7P

MICROWAVE DIELECTRIC CHARACTERISTICS OF Y2BaZnO5 CERAMICS WITH Sm
SUBSTITUTION FOR Y
A. Kan, H. Ogawa and H. Ohsato* (Meijo University and *Nagoya Institute of Technology)

31E-MW2-8P

PREPARATION AND DIELECTRIC PROPERTIES OF BST THIN FILMS BY RF
SPUTTERING FOR TUNABLE MICROWAVE APPLICATIONS
J. Xu, C. Weil*, W. Menesklou, R. Jakoby* and E. I.-Tiffée (Universität Karlsruhe (TH) and*Technische Universität Darmstadt)

31E-MW2-9P

THE EFFECT OF ANNEALING CONDITION ON DIELECTRIC PROPERTIES OF (Ba,Sr)TiO3
THIN FILMS FOR MICROWAVE TUNABLE DEVICES
B. Y. Lee, C. I. Cheon and J. S. Kim (Hoseo University)

31E-MW2-10P

CHARACTERISTICS OF Ni DOPED (Ba0.5Sr0.5)TiO3 THIN FILMS ON
MOCVD-(Ba0.5Sr0.5)RuO3 INTERFACIAL LAYERS FOR MICROWAVE TUNABLE
Y.-A. Jeon, N.-J. Seong, T.-S. Seo and S.-G. Yoon (Chungnam national university)

Conference Room 4
Piezoelectrics (II) (15:45 --- 17:15)
31F-PZ2-1P

EFFECT OF STRESS INDUCED DOMAIN SWITCHING ON THE POLARIZATION AND
FERROELECTRIC HYSTERESIS CURVE IN SOFT AND HARD PZT CERAMICS UNDERCOMPRESSIVE LOADING
J. M. Calderon-Moreno, M. Popa and M. Yoshimura (Tokyo Institute of Technology)

31F-PZ2-2P

ELECTRICAL PROPERTIES OF BST THIN FILM ON Pt AND Ru BOTTOM ELECTRODEUTILIZING 2-STEPS O2 ANNEAL TECHNIQUE
M. Tanimura, I. Kimura, K. Suu and M. Isikawa (ULVAC JAPAN)

31F-PZ2-3P

THE STRONG TENDENCY OF PREFERRED ORIENTATION IN NBT CERAMICSFABRICATED BY HOT-FORGING METHOD
I. W. Kim, C. W. Ahn, D. S. Lee, M. S. Ha, J. S, Lee, B. M. Jin* (University of Ulsan,*Dong-eui University)

31F-PZ2-4P

DIELECTRIC, ELASTIC AND PIEZOELECTRIC LOSSES OF PZT CERAMICS IN THE
RESONANCE STATE
T. Tsurumi, H. Kakemoto and S. Wada (Tokyo Institute of Technology)

31F-PZ2-5P

THE INFLUENCE OF Pb(Mg1/3Nb2/3)O3 CONTENT ON THE PIEZOELECTRIC AND
DIELECTRIC PROPERTIES OF PMMN-PZT SYSTEM NEAR THE MPB
H. Chen, X. Guo and Z. Meng (Shanghai University)31F-PZ2-6P

EFFECT OF GRAIN ORIENTATION ON ELECTRIC FIELD-INDUCED STRAIN IN BISMUTH
SODIUM POTASSIUM TITANATE
Y. Saito, T. Tani and K. Takatori (Toyota Central R&D labs. Inc.)

31F-PZ2-7P

PIEZOELECTRIC PROPERTIES OF SPARK-PLASMA-SINTERED (Na,K)NbO3 -PbTiO3
CERAMICS
R. Wang, R. Xie, T. Sekiya, Y. Shimojo, Y. Akimune, N. Hirosaki* and M. Itoh** (National
Institute of Advanced Industrial Science and Technology, *National Institute of Materials
Science and **Tokyo Institute of Technology)

31F-PZ2-8P

PREPARATION AND PROPERTIES OF (K0.5Bi0.5)TiO3 CERAMICS BY
POLYMERIZED COMPLEX METHOD
T. Wada, A. Fukui and Y. Matsuo (Ryukoku University)

31F-PZ2-9P

THE SYNTHESIS AND ELECTRICAL PROPERTIES OF Pb(Zr,Ti)O3 CERAMICS WITH
IMPROVED PROCESS.
M.-H. Kim, A. Golovchanski, C.-S. Youn, T. K. Song and T.-G. Park (Changwon National
University)

31F-PZ2-10P

PREPARATION OF THICK PIEZOELECTRIC FILMS ON SILICON SUBSTRATE BY LASER
LIFT-OFF TECHNIQUE
N.-H. Tai, Y.-M. Shen, T.-Hsua, I.-N. Lin, L.-J. Hu* and T.-S. Yeh* (National Tsing-Hua
University and *Chun-Shan Institute of Science and Technology)

31F-PZ2-11P

PIEZOELECTRIC FUNCTIONAL GRADIENT MATERIAL FOR BENDING DEVICES BASEDON Ba(Ti, Sn)O3 CERAMIC
R. Steinhausen, A. Kouvatov, W. Seifert, H. Beige, H. T. Langhammer and H.-P. Abicht(Martin-Luther-Universität)

31F-PZ2-12P

CONFORMATIONAL DEFECTS IN HIGH-STRAIN, ELECTROSTRICTIVE POLYMERS
G. J. Kavarnos, T. Ramotowski* and Q. Zhang** (University of Rhode, *NUWC and**Pennsylvania State University)

31F-PZ2-13P

PIEZOELECTRICS FOR INKJET PRINT TECHNOLOGY
J. Brünahl, A. Grishin and S. Khartsev (Royal Institute of Technology)

31F-PZ2-14P

CHARACTERIZATION OF PIEZOELECTRIC PZT IN VIEW OF TRANSDUCERS AND
POWER GENERATOR
M. Ichiki, K. Ashida* and T. Kitahara* (National Institute of Advanced Industrial Science andTechnology and *Shonan Institute of Technology)

31F-PZ2-15P

FABRICATION OF MICROCANTILEVER ARRAYS USING SOL-GEL PZT THIN FILM
H. Zhu, M. Zhou, J. Miao, T. Suna and M. Okuyama* (Nanyang Technological University
and *Osaka University)

31F-PZ2-16P

MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF (Pb, La, Nd)(Mn, Sb,Ti)O3
SYSTEM CERAMICS FOR 20 MHz CERAMIC RESONATOR
J. Yoo, S. Min, C. Park, S. Suh*, H. Yoon** and J. Kim*** (Semyung University, *Gain-tech,**Kyungmoon College and ***Samsung Electromechanics Co.)

31F-PZ2-17P

PIEZOELECTRIC AND DIELECTRIC PROPERTIES OF Pb(Ni1/3Nb2/3 )O3-Pb(Mn1/3Nb2/3)O3 -Pb(Zr,Ti)O3 CERAMICS FOR PIEZOELECTRIC
S. Hwang, J. Yoo, L. Whang,J. Hong*, S. Ryu**, S. Lee ** and M. Lee*** (Semyung
University, *Dongseoul College, **Chungju University and ***KATS)

31F-PZ2-18P

MICROSTRUCTURAL, DIELECTRIC AND ELECTRICAL PROPERTIES OF (Pb,La,Ce)TiO3
CERAMICS FOR HIGH FREQUENCY CERAMIC RESONATOR AS A FUNCTION OF MnO2
ADDITION
D. Oh, J. Lee, J. Yoo, H. Jeong*, C. Park and S. Lee** (Semyung University, *Juseong
College and **Kyungbuk National University)

31F-PZ2-19P

DOPANT EFFECTS ON PROPERTIES OF PZT95/5 MATERIAL
H. Du, D. Z. Sun, S. W. Lin, N. Zhong and M. Y. Zhao (Chinese Academy of Sciences)31F-PZ2-20P

Pyroelectrics

THE THERMOMECHANICAL STRESS IN THE 1.3 PIEZOELECTRIC COMPOSITE
H. S. Lee, C. Richard and D. Guyomar (Laboratoire de Génie Electrique et Ferroélectricité)(15:45 --- 17:15)

31F-PY-1P

INFLUENCE OF DIFFERENT SUBSTRATE ON THE DETECTIVITY OF PYROELECTRICSENSORS
J. Li, Y. Ningyi, H. L. W. Chan* and C. L. Choy* (Jiangsu Institute of Petrochemical
Technology and *The Hong Kong Polytechnic University)

31F-PY-2P

PROPERTIES OF PT/P(VDF-TrFE) PYROELECTRIC SENSOR BASED ON PLASTIC FILM
SUBSTRATE
Y. Ningyi, J. Li, H. L. W. Chan* and C. L. Choy* (Jiangsu Institute of Petrochemical
Technology and *The Hong Kong Polytechnic University,)

31F-PY-3P

PYROELECTRIC PROPERTIES OF THE b-PVDF THIN FILM PREPARED BY VACUUMDEPOSITION METHOD WITH APPLYING ELECTRIC FIELD
D. H. Chang and Y. S. Yoon (Inha University)

31F-PY-4P

RESPONSE ANALYSIS OF MULTILAYER PYROELECTRIC STRUCTURES
D. H. Chang, S. J. Kang* and Y. S. Yoon (Inha University and *Yosu University)

31F-PY-5P

SELF-POLARIZATION AND MIGRATORY POLARIZATION IN THIN-FILM FERROELECTRIC
CAPACITOR
I. P. Pronin, E. Yu. Kaptelov, E. A. Tarakanov and *V. P. Afanasjev (A.F.Ioffe
Physico-Technical Institute and *LETI)

31F-PY-6P

PREPARTION OF 3D 256 ELEMENTS PCLT/P(VDF-TrFE) INFRARED ARRAY
L. Jinhua* **, Y. Ningyi* **, H. L. W. Chan* and C. L. Choy* (*The Hong Kong Polytechnic
University and **Jiangsu Institute of Petrochemical Technology)

31F-PY-7P

A DIELECTRIC BOLOMETER MODE OF INFRARED SENSOR USING A
Ba(Ti0.85Sn0.15)O3 THIN FILM WITH A HIGH TEMPERATURE COEFFICIENT OFDIELECTRIC CONSTANT
M. Noda, T. Miyamoto*, S. Murakami*, T. Nomura**, K. Inoue* and M. Okuyama (Osaka
University, *Technology Research Institute of Osaka Pref. and **Ritsumeikan University)

31F-PY-8P

EFFECT OF Mn DOPING ON THE PROPERTIES OF PST:BST SYSTEM
C. Prakash and A. Bhalla* (Solid State Physics Laboratory and *The Pennsylvania State
University)

31F-PY-9P

PYROELECRIC PROPERTIES OF BARIUM TITANATE CERAMICS PREPARED BY
SOL-GEL AND SAG METHODS
T.-L. Ren, X.-H. Wang, L.-T. Liu, Z.-J. Li, P.-L. Zhang* and W.-L. Zhong* (Tsinghua
University and *.Shandong University)

Optics (15:45 --- 17:15)
31F-OP-1P

FERROELECTRIC BST THIN FILMS USING SOL-GEL TECHNOLOGY FOR FLAT PANELDISPLAY APPLICATION
W. Zhu, O. K. Tan, J. Ray and M. A. Imam (Nanyang Technological University)

31F-OP-2P

STUDY ON THE APPLICATION OF ELECTRO-OPTIC POLYMER FOR WAVEGUIDE
Z. Qin, C. Fang, Q. Pan, W. Shi, Q. Gu and X. Wu (Shandong University)

31F-OP-3P

MODELS OF MOLECULAR ALIGNMENT STRUCTURE IN POLYMER-STABILIZEDFERROELECTRIC LIQUID CRYSTALS
H. Furue, T. Takahashi*, S. Kobayashi** and H. Yokoyama*** (Japan Science andTechnology Corporation, * Kogakuin University, ** Science University of Tokyo in
Yamaguchi, *** Naitional Institute of Advanced Industrial Science and Technology)

31F-OP-4P

ANISOTROPY OF INDUCED BIREFRINGENCE IN FERROELECTRICS WITHPSEUDOILMENITE STRUCTURE
A. M. Mamedov, M. Z. Kurt and K. Kıymac (Cukurova University)31F-OP-5P

ON THE CRYSTAL OPTICS OF PHASES WITH INCOMMENSURATEIN FERROELECTRICS SEMICONDUCTORS TlGaSe2 AND TlInS2
B. R. Gadjiev (Frank Laboratory of Neutron physics)

SUPERSTRUCTURE

31F-OP-6P

FERROELECTRIC THIN FILM OPTICAL DETECTORS FOR RENTINAL PROSTHESIS
A. Zomorrodian, N. J. Wu, S. Wilczak, A. Ignatiev, T. Bensaoula* and C. A. Garcia*(University of Housto and *University of Texas)

31F-OP-7P

TIME-DOMAIN TERAHERTZ SPECTROSCOPY OF SrBi2Ta2O9 THIN FILMS ON MgO
SUBSTRATES
I. Kawayama, K. Kotani and M. Tonouchi (Osaka University)

31F-OP-8P

ELECTRO-OPTIC EFFECT IN EPITAXIAL ZnO:Li THIN FILMS
T. Nagata, A. Ashida, Y. Takagi, N. Fujimura and T. Ito (Osaka Prefecture University)

31F-OP-9P

MICROSTRUCTURE AND OPTICAL PROPERTIES OF W, Li-DOPED PZT PIEZOCERAMICS
R. Ramer, E. Dimitriu* and V. Ghiordanescu* (University of South Wales and * National
Institute for Materials Physics)

31F-OP-10P

FOUR-PORTS BIDIRECTIONAL OPTICAL SWITCH USING (Pb, La)(Zr, Ti)O3 CERAMICS
T. Utsunomiya (The National Defense Academy)

Reception Hall
Thin film - Fabrication - etc (II) (15:45 --- 17:15)
31G-TE2-1P

INFRARED SPECTROSCOPIC STUDY ON REACTION MECHANISMS OF TITANIUM
SOURCE MOLECULES IN METALORGANIC CHEMICAL VAPOR DEPOSITION OF(Ba,Sr)TiO3 FILMS
T. Nakamura, S. Momose and K. Tachibana (Kyoto University)

31G-TE2-2P

IN SITU DIAGNOSTICS OF CRYSTAL GROWTH IN METALORGANIC CHEMICAL VAPORDEPOSITION OF (Ba,Sr)TiO3 FILMS USING INFRARED REFLECTION ABSORPTIONSPECTROSCOPY
T. Nakamura, S. Momose and K. Tachibana (Kyoto University)

31G-TE2-3P

DIELECTRIC PROPERTIES OF EPITAXIALLY GROWN Y2O3 ON Si SUBSTRATES
N. Fujimura, K. Kakuno, T. Matsui, K. Morii and T. Ito (Osaka Prefecture University)

31G-TE2-4P

PROCESSING AND PROPERTIES OF TUNGSTEN BRONZE (Ba,Ln)Nb2O6 [Ln: RARE
EARTH] THIN FILMS BY CHEMICAL SOLUTION DEPOSITION
W. Sakamoto, M. Mizuno, Y. Horie, T. Yogo and S. Hirano (Nagoya University)

31G-TE2-5P

CHEMICAL PROCESSING AND PROPERTIES OF (Sr,Ca)2(Nb,Ta)2O7 THIN FILMS
W. Sakamoto, Y. Yura, D. Kawasaki, T. Yogo and S. Hirano (Nagoya University)

31G-TE2-6P

EFFECT OF A-SITE SUBSTITUTION ON THE MAGNETIC AND DIELECTRIC BEHAVIORSOF YMnO3 BASED FERROELECTRIC THIN FILMS
H. Sakata, N. Fujimura, D. Ito, T. Yokota and T. Ito (Osaka Prefecture University)

31G-TE2-7P

NUCLEATION AND GROWTH OF THIN (Ba,Sr)TiO3 FILMS IN A MOCVD REACTOR
P. Ehrhart*, F. Fitsilis*, S. Regnery*,**, R. Waser*, F. Schienle**, M. Schumacher**, H.
Juergensen** (*IFF-Forschungszentrum Jülich and **Aixtron AG Aachen)

31G-TE2-8P

PREPARATION OF FERROELECTRIC YMnO3 THIN FILMS BY METAL-ORGANICDECOMPOSITION PROCESS
S. G. Kang (Kyonggi University)

31G-TE2-9P

COMPARATIVE MICROSTRUCTURE AND ELECTRICAL PROPERTY STUDIES OF PST
THIN FILMS AS PREPARED BY LDCVD, SOL-GEL AND SPUTTERING TECHNIQUES
Z. Huang, P. P. Donohue*, Q. Zhang, D. Williams*, C. J. Anthony*, M. A. Todd* and R. W.
Whatmore (Cranfield University and *St. Andrews Rd)

31G-TE2-10P

ROLE OF ULTRA THIN SiOX LAYER ON EPITAXIAL YSZ/SiOX/Si THIN FILM AS MULTI
FUNCTIONAL BUFFER LAYER BY NANO-PROBE AND IN-SITU TEM INVESTIGATION
T. Kiguchi, N. Wakiya, K. Shinozaki and N. Mizutani (Tokyo Institute of Technology)

31G-TE2-11P

THE EFFECT OF ANNEALING ON THE STRUCTURE AND DIELECTRIC PROPERTIES OF(Ba1-XSrX)TiO3 THIN FILMS
W. Wu, D. Peng, X. Liang and Z. Meng (Shanghai University)

31G-TE2-12P

PREPARATION OF BaTiO3 - BaZrO3 FILMS BY METAL-ORGANIC CHEMICAL VAPORDEPOSITION
T. Tohma, H. Masumoto and T. Goto (Tohoku Univ.)

31G-TE2-13P

CrTiN/TiN DOUBLE BARRIER LAYER OF COB STRUCTURE FOR HIGH DENSITY FERAMAPPLICATIONS
J. Kim, J. Koo, S.-K. Hong* and S.-J. Yeom* (Kookmin University and *Hynix Semiconductor
Inc.)

31G-TE2-14P

PREPARATION OF BaTiO3 THIN FILM AT 140oC BY MOD-HYDROTHERMAL METHODWITH DIFFERENT PRECURSOR
Z. Wei, M. Noda and M. Okuyama (Osaka University)

31G-TE2-15P

GROWTH PROCESS AND SURFACE ACOUSTIC WAVE CHARACTERISTICS OF LiNbO3 /DIAMOND / SILICON MULTILAYERED STRUCTURES
E. Dogheche, V. Sadaune*, S. Chauvin and D. Rèmiens* (IEMN and *MIMM)

31G-TE2-16P

THIN OXIDIZED TITANIUM AS A BOTTOM ELECTRODE ADHESION LAYER FOR
Pt/BST/Pt CAPACITORS
I. P. Koutsaroff, P. Woo, L. McNeil, M. Zelner, M. Buchbinder and B. McClelland (Gennum
Corporation)

31G-TE2-17P

INVESTIGATION OF ALUMINA BARRIER LAYER FOR FERAM PREPARED BY RFMAGNETRON SPUTTERING METHOD
T. Jimbo, Y. Miyaguchi, S. Kikuchi, I. Kimura, M. Tanimura, K. Suu and M. Ishikawa(Institute for Semiconductor Technologies)

31G-TE2-18P

LEAKAGE CURRENT PROPERTIES OF (Ba0.7Sr0.3)TiO3 THIN FILMS DEPENDING
ON THE FILM THICKNESSC. Kügeler*, R. Liedtke* and R. Waser*,** (*Institut für Werkstoffe der Elektrotechnik II and**Institut für Festkörperforschung)

31G-TE2-19P

AQUEOUS CHEMICAL SOLUTION DEPOSITION FOR FERROELECTRIC THIN FILMS
M. K. Van Bael, K. Van Werde, D. Nelis, D. Mondelaers, A. Hardy, G. Vanhoyland, H. Van
den Rul, J. Mullens, L. C. Van Poucke, F. Frederix* and D. J. Wouters* (Limburgs
Universitair Centrum and *IMEC)

31G-TE2-20P

STUDY OF NON-LEAD BASED RELAXOR - PULSED EXCIMER LASER ABLATED Sn
MODIFIED BaTiO3 THIN FILMS
S. Halder, P. Victor, A. Laha, S. Bhattacharya and S. B. Krupanidhi (Indian Institute of
Science)

31G-TE2-21P

PULSE-EXTENDED EXCIMER LASER CRYSTALLISATION OF FERROELECTRIC THINFILMS FOR INTEGRATION ON LOW THERMAL BUDGET SUBSTRATES
P. P. Donohue and M. A. Todd (QinetiQ Ltd.)Thin film - Properties (II) (15:45 --- 17:15)
31G-PP2-1P

EFFECTS OF SUBSTRATES ON ALKOXY-DERIVED (Y,Yb)MnO3 THIN FILMS
K. Suzuki, D. Fu, K. Nishizawa, T. Miki and K. Kato (National Institute of Advanced
Industrial Science and Technology)

31G-PP2-2P

FERROELECTRIC PROPERTIES OF CSD-DERIVED Sr0.3Ba0.7Nb2O6 (SBN30) THIN
FILMS
D. G. Lee, H. Y. Lee, J. J. Kim* and S. H. Cho* (Yeungnam University and *Kyungpook
National University)

31G-PP2-3P

FERROELECTRIC AND MAGNETIC PROPERTIES OF PrFeO3-PbTiO3 THIN FILMS
C. I. Cheon, J. S. Kim and P. W. Jang* (Hoseo University and *Chongju University)

31G-PP2-4P

CHARACTERIZATION OF POTASSIUM NIOBATE PRODUCED BY SELF-ASSEMBLED
NANOSHEET FROM AQUEOUS SOLUTION
K. Toda, N. Ohtake, M. Kawakami, S. Tokuoka, K. Uematsu and M. Sato (Niigata University)

31G-PP2-5P

DIELECTRIC RELAXATION IN PULSED EXCIMER LASER ABLATED AMORPHOUS
ZIRCONIUM TITANATE THIN FILMS
P. Victor and S. B. Krupanidhi (Indian Institute of Science)

31G-PP2-6P

IMPACT OF MICROSTRUCTURE ON THE ELECTRICAL PROPERTIES OF ZIRCONIUM
TITANATE THIN FILMS IN MOS CONFIGURATION
P. Victor and S. B. Krupanidhi (Indian Institute of Science)

31G-PP2-7P

INFLUENCE OF EXCITATION FREQUENCY AND AMPLITUDE ON THE SWITCHING
PROPERTIES OF SBT AND PZT THIN FILMS AT 10MHz HYSTERESIS FREQUENCY
U. Kall*, U. Bottger*, Y.-K. Lin*, A. Werner*, R. Waser*,**, C. Szot** and S. Tiedke***(*RWTH, **Forschungszentrum Julich and ***Aixacct)

Electrode(15:45 --- 17:15)

31G-EL-1P

HIGHLY TEXTURED (100)RuO2/(001)Ru MULTI-LAYERS PREPARED BY SPUTTERING
Y. Abe, M. Kawamura and K. Sasaki (Kitami Institute of Technology)

31G-EL-2P

TUNGSTEN BASED ELECTRODES FOR STACKED CAPACITOR FERROELECTRICMEMORIES
L. Trupina, J. Baborowski, P. Muralt, J.-M. Salese*, D. Bouvet* and P. Fazan* (Ceramics
Laboratory and *General Electronics Laboratory)

31G-EL-3P

PREPARATION OF (100)-ORIENTED LaNiO3 OXIDE ELECTRODES FOR
SrBi2Ta2O9-BASED FERROELECTRIC CAPACITORS
G. Hu, T. Tang and J. Xu* (Fudan University and *the Chinese University of Hong Kong)

31G-EL-4P

COMPOSITION AND ELECTRICAL PROPERTY OF METALLIC RUTHENIUM THINS FILMS
USING Ru(C6H6)2 PRECURSOR
J. Choi, Y. Choi, H. Tian, S. Kim* and K. No (Korea Advanced Institute of Science andTechnology and *Korea University of Technology)

31G-EL-5P

HIGH TEMPERATURE ETCH PROPERTIES OF IRIDIUM AND IRIDIUMOXIDE ELECTRODE
MATERIALS
S. Schneider, H. Kohlstedt and R. Waser (Forschungszentrum Jülich)

31G-EL-6P

THERMAL STABILITY OF SrRuO3-BOTTOM-ELECTRODE AND THE CRYSTALSTRUCTURE AND THE ELECTRICAL PROPERTY OF PZT THIN FILM DEPOSITED ON
SrRuO3
K. Takahashi, T. Oikawa, Keisuke Saito*, H. Fujisawa**, M. Shimizu** and H. Funakubo(Tokyo Institute of Technology, *Philips Japan, Ltd. and **Himeji Institute of Technology)

31G-EL-7P

PROPERTIES OF Pt ALLOY THIN FILM ELECTRODES FOR FERROELECTRIC
CAPACITORS
M. Kurita*,**, T. Shiosaki** and S. Okamura** (*Tanaka Kikinzoku Kogyo and **NAIST)

31G-EL-8P

EPITAXIAL GROWTH OF SrRuO3 THIN FILM ELECTRODE ON Si BY PULSED LASERDEPOSITION
T. Higuchi, S. Iwashita, M. Ishida T. Shimoda, Y. X. Chen* and J. Koike* (SEIKO EPSON
Corporation and *Tohoku University)

31G-EL-9P

PREPARATION OF Ag ALLOY TOP ELECTRODES FOR FERROELECTRIC Pb(Zr, Ti) O3
FILM
H. Masumoto, A. Kojima, T. Iijima* and T. Goto (Tohoku Univ and *AIST)31G-EL-10P

INFLUENCE OF ELECTRODE MATERIAL ON THE INTERFACIAL CAPACITANCE AND
THE FAILURE MECHANISMS IN PZT THIN FILMS
U. Ellerkmann*, U. Boettger*, T. Schneller*, R. Waser*,**, N. Nagel*** and R.
Bruchhaus*** (*RWTH AachenI, **Forschungszentrum Jülich and ***MP FDAc/o Toshiba
Corporation)

31G-EL-11P

PREPARATION OF BaPbO3 ELECTRODE THIN FILMS BY RF MAGNETRON SPUTTERINGAND EVALUATION OF THEIR ELECTRICAL PROPERTY
I. Kawakami, M. Matsuoka, T. Nishida, S. Okamura and T. Shiosaki (Nara Institute of
Science and Technology)

31G-EL-12P

EFFECT OF (Ba,Sr)RuO3 THIN FILMS ON HYDROGEN ANNEALING OF(Ba,Sr)RuO3/(Ba,Sr)TiO3/(Ba,Sr)RuO3 CAPACITORS
E.-S. Choi and S.-G. Yoon (Chungnam National University)

31G-EL-13P

PREPARATION AND CHARACTERISTICS OF NiCr BOTTOM ELECTRODE OF
FERROELECTRIC THIN FILMS.
E.-M. Lee and S.-G. Yoon (Chungnam National University)

High-k, Gate-oxide(15:45 --- 17:15)

31G-HG-1P

Si DIFFUSION IN HfO2 THIN FILMS DEPOSITED BY ATOMIC LAYER DEPOSITION FORGATE OXIDE APPLICATION
M. Cho, J. Park, B. K. Park and C. S. Hwang (Seoul National University)

31G-HG-2P

INTERFACIAL REACTION BETWEEN CHEMICALLY VAPOR DEPOSITED HfO2 THINFILMS AND HF-CLEANED Si SUBSTRATE DURING FILM GROWTH AND
J. Park, B. K. Park, M. Cho and C. S. Hwang (Seoul National University)

31G-HG-3P

FORMATION OF RELIABLE HfO2/HfSiXOY GATE-OXIDE FOR
METAL-OXIDE-SEMICONDUCTOR DEVICES
H. Kang, Y. Quan, D. Jung and Y. Roh (Sungkyunkwan University)

31G-HG-4P

CHARACTERISTICS OF ZrO2 THIN FLIMS USING ATOMIC LAYER DEPOSITION FOR
ALTERNATIVE GATE DIELECTRIC
J. Park, B. Choi, N. Park and J. Kim (Kookmin University)

31G-HG-5P

CHARACTERISTICS OF ZIRCONIUM BASED AMORPHOUS THIN FILMS DEPOSITED BY
CO-SPUTTERING
C. Jeon, S. Kong, J. An* and J. Kim (Kookmin University and *Hanyang University)

31G-HG-7P

La AND Zr-BASED ALTERNATIVE GATE DIELECTRICS: A STRUCTURAL AND
ELECTRICAL INVESTIGATION
C. R. Hoffman, D. Wicakasana, H. Schmidt*, E. Garfunkel*, S. Stemmer**, J-P. Maria and A.
I. Kingon (North Carolina State University, *Rutgers University and **Rice University)

31G-HG-8P

REDUCTION OF LEAKAGE CURRENT BY HfO2 HIGH K DIELECTRIC FILM STACKED ON
FERROELECTRIC LAYER FOR EXTENDING THE RETENTION TIME OF MFMIS FETT. Nishikawa, T. Otsuka and K. Morita (Matsushita Electric Industrial Co.)

GalleryThin film - Properties (I) (15:45 --- 17:15)
31H-PP1-1P

CHARACTERISTICS OF BST THIN FILM PREPARED BY NOVEL CHEMICAL SOLUTIONDEPOSITON METHOD FOR HIGH DENSITY DRAM APPLICATION
Y. Lin, Y. Xie and T. Tang (Fudan University)

31H-PP1-2P

FIELD AND TIME INDUCED ORDER-DISORDER TRANSITION IN “HARD” PZT THICK
D. Damjanovic, A. Tagantsev, J. Dorn, J. Mueller and N. Setter (Swiss Federal Institute ofTechnology – EPFL)

31H-PP1-3P

CHARACTERISTICS OF LOW-TEMPERATURE-PRERPARED (Ba, Sr)TiO3 FILMS POST
TREATED BY NOVEL EXCIMER LASER ANNEALING
D.-C. Shye, B.-S. Chiou, C.-C. Hwang, J.-S. Chen*, I.-W. Su**, C.-C. Chou** and H.-C.
Cheng (National Chiao Tung University, *National Science Council and **National Taiwan
University of Science and Technology)

31H-PP1-4P

EFFECTS OF POLING ON THE SWITCHING PROPERTIES OF SrBi2Ta2O9 FILMS
X. M. Lü, J. S. Zhu, X. B. Chen*, X. S. Zhang, Z. G. Liu and Y. N. Wang (Nanjing University
and Yangzhou University*)

31H-PP1-5P

CHARACTERIZATION OF (Ba,Sr)TiO3 (BST) THIN FILMS GRWON BY LIQUID DELIVERYMETAL ORGANIC CHEMICAL VAPOR DEPOSITION USING A NOVEL Ti PRECURSOR,
Ti(2meip)2
Y. J. Cho, Y.-S. Min, J.-H. Lee, J. S. Kim, J. H. Kim* and C. S. Hwang* (Samsung Advanced
Institute of Technology and *Seoul National University)

31H-PP1-6P

DIELECTRIC PROPERTIES OF IRRADIATED FERROELECTRIC AND
ANTIFERROELECTRIC THIN FILMS
R. Bittner, K. Humer, H. W. Weber, L. Cakare*, A. Sternberg**, D. V. Kulikov*** and Y. V.
Trushin*** (Atomic Institute of the Austrian Universities, *Jozef Stefan Institute, **Universityof Latvia and ***A. F. Ioffe PTI of RAS)

31H-PP1-7P

THERMALLY ACTIVATED LOW FREQUENCY DIELECTRIC DISPERSION OF
ANTIFERROELECTRIC Pb1.1La0.025Zr0.95Ti0.05O3 THIN FILM
I. W. Kim, D. S. Lee, S. H. Kang, Y. H. Kim*, B. C. Choi* and J. H. Jeong* (University of
Ulsan and *Pukyong National University)

31H-PP1-8P

EFFECT OF IN-SITU APPLIED FIELD ON THE PROPERTIES OF SrBi2Ta2O9 THIN
H. Ling, A. Li, D. Wu, Z. Liu and N. Ming (Nanjing University,)

31H-PP1-9P

RELAXATION OF REMANENT POLARIZATION IN PZT THIN FILM CAPACITORS
K. W . Lee and W. J. Lee (KAIST)

31H-PP1-10P

INTERNAL STRAIN EFFECT ON POLARIZATION PROFILE AND DOMAIN STRUCTURE IN
FERROELECTRIC THIN FILMS
S. V. Pavlov (Moscow State University)

31H-PP1-11P

ANALYSIS OF THE GRAIN SIZE SATURATION IN SELECTIVLEY NUCLEATED AND
LATERAL CRYSTALLIZED LEAD ZIRCONATE TITANATE THIN FILMS
J.-S. Lee, J.-H Park and S.-K. Joo (Seoul National University)

31H-PP1-12P

PARTICULARITIES OF BEHAVIOR OF THE SELF-POLARIZED LEAD ZIRCONATE
TITANATE THIN FILMS
V. P. Afanasjev, A. V. Pankrashkin, *I. P. Pronin and *L. M. Sorokin (St.-Petersburg StateElectrotechnical University and *A.F.Ioffe Physico-Technical Institute Russian Academy of
Sciences)

31H-PP1-13P

DIELECTRIC PROPERTY AND LATTICE DISTORTION OF BaTiO3/SrTiO3
SUPERLATTICE BY PULSED LASER DEPOSITION
J. Kim, L. Kim, D. Jung, Y. S. Kim and J. Lee (Sung Kyun Kwan University)

31H-PP1-14P

CURRENT TRANSPORT THROUGH ULTRA-THIN PZT AND BTO TUNNEL BARRIERS
H. Kohlstedt, J. R. Contreras, J. Schubert, U. Poppe, C. L. Jia and R. Waser(Forschungszentrum Jülich)

31H-PP1-15P

EFFECT OF Zr/Ti RATIO IN TARGETS ON ELECTICAL PROPERTIES OF PZT THIN FILMSDERIVED BY LASER ABLATION
Z. J. Wang, L. J. Yan, H. Kokawa and R. Maeda* (Tohoku University and *National Instituteof Advanced Science and Technology)

31H-PP1-16P

FERROELECTRIC FATIGUE IN SOL-GEL DERIVED Pb(Zr0.40,Ti0.60)O3 THIN FILMS
HAVING Pt BOTTOM AND PtOX TOP ELECTRODES
J. E. Lim, K. S. Cho, C. S. Hwang, S.-H. Kim*, D.-S. Lee*, H.-J. Woo*, C.-Y. Koo* and J.
Ha* (Seoul National University and *INOSTEK Inc)

31H-PP1-17P

HEAT-TREATMENT INDUCED FERROELECTRIC FATIGUE OF
Pt/Sr1-xBi2+yTa2O9/Pt THIN-FILM CAPACITORS
J. Zhao, S. Jeong, J. Lim, C. S. Hwang and S.-H. Kim* (Seoul National University and*INOSTEK Inc)

31H-PP1-18P

CHARACTERIZATION OF (Bi3.15La0.85)Ti3O12 THIN FILMS FABRICATED BYCHEMICAL SOLUTION DEPOSITION ON VARIOUS SUBSTRATES
S.-O. Ryu, W.-J. Lee, N.-Y. Lee, K.-J. Choi*, I.-K. You, S. M. Cho, B.-G. Yu, K.-I. Cho and
S.-G. Yoon* (ETRI and *Chungnam National University)

31H-PP1-19P

FIRST-PRINCIPLES STUDY OF ELECTRONIC POLARIZATION IN Bi-LAYER STRUCTUREOXIDES
H. Miyazawa, E. Natori, M. Ishida, T. Shimoda and D. Vanderbilt (SEIKO EPSON
Corporation)

31H-PP1-20P

PROPERTY DEGRADATION OF Pb(Zr0.52,Ti0.48)O3 (PZT) THIN FILM WITH
THICKNESS AND AGING TIME
H. W. Song, H. Shin*, S. Kim** and K. No (KAIST, *Samsung Advanced Institute ofTechnology and **Korea University)

31H-PP1-21P

ELECTRICAL AND STRUCTURAL PROPERTIES OF PZT FILMS DEPOSITIED BY MOCVDUSING ULTRASONIC NEBULIZATION
H.-S. Shin, C.-H. Lee (Keimyung University)

31H-PP1-22P

HYDROGEN-INDUCED DEGRADATION MECHANISMS IN FERROELECTRIC(Bi,La)4Ti3O12 AND Pb(Zr,Ti)O3 THIN FILMS
J.-G. Yoon*,**, S. Seo*, B. S. Kang*, J. D. Kim*, T. W. Noh*, Y. K. Lee*** and Y. S. Kim***(*Seoul National University, **University of Suwon and ***Samsung Institute of Technology)

31H-PP1-23P

IMPRINT CHARACTERISTICS OF FERROELECTRIC THIN FILMS AT HIGH STORAGE AND
OPERATION TEMPERATURES
K. H. Noh, Y. M. Kang, B. Yang, S. W. Lee, S.-S. Lee and Y.-J. Park (Hynix Semiconductor
Inc.)

31H-PP1-24P

REJUVENATION AND FATIGUE EFFECTS IN SOL-GEL PZT FILMS WITH PLATINUM
ELECTRODES
V. Shur, E. Rumyantsev, I. Baturin, E. Nikolaeva, E. Shishkin, D. Kuznetsov, D. Bolten*, T.
Schneller* and R. Waser* (Ural State University and *RWTH Aachen)

31H-PP1-25P

FERROELECTRIC PROPERTIES AND CURRENT CONDUCITON MECHANISMS OF
Pt/(Bi,La)4Ti3O12/Pt CAPACITORS
N.-K. Kim, C.-R. Song, S.-Y. Kweon, E.-S. Choi, S.-J. Yeom and J.-S. Roh (Hynix
Semiconductor, Inc.)

31H-PP1-26P

ELECTRICAL PROPERTIES OF VANADIUM DOPED Bi-La-Ti-O THIN FILMS DERIVED BYCHEMICAL SOLUTION DEPOSITION METHOD
T.-W. Chiu, N. Wakiya, K. Shinozaki and N. Mizutani (Tokyo Institute of Technology)

31H-PP1-27P

SIMULATION OF LEAKAGE CURRENT IN THIN FILMS WITH DEAD LAYERS
H. Schroeder, S. Schmitz, P. Meuffels and R. Liedtke* (Institut für Festkörperforschung
Forschungszentrum Jülich GmbH and *Institut für Werkstoffe)

31H-PP1-28P

CONDUCTION BEHAVIOR OF STRONTIUM-BISMUTH-TANTALATE THIN FILMS BY
PULSED LASER DEPOSITION
J. S. Kim, T. K. Song, S. S. Kim, J. K. Kim, I. W. Kim*, B. C. Choi** and J. H. Jeong**(Changwon National University, * University of Ulsan and **Pukyong National University)

31H-PP1-29P

FINITE ELEMENT ANALYSIS OF DOMAIN STRUCTURES IN EPITAXIAL PbTiO3 THINFILMS ON MgO AND Pt/MgO SUBSTRATESK. Lee, Y. K. Kim and S. Baik (Pohang University of Science and Technology)

31H-PP1-30P

ELECTRICAL PROPERTIES OF IN-PLANE ORIENTED FERROELECTRIC
Bi4Ti3O12-BASED THIN FILMS SYNTHESIZED BY CHEMICAL SOLUTION
H. Matsuda and T. Iijima (Institute of Advanced Industrial Science and Technology)

31H-PP1-31P

CHARACTERIZATION OF SBT BASED CAPACITORS USING Zr-SILICATE INSULOTERLAYERS
H. Min, C. Jun, N. Park, S. Kong, J. Lee and J. Kim (Kookmin University)

31H-PP1-32P

INFLUENCE OF STRUCTURAL PROPERTIES ON THE TEMPERATURE OF
FERROELECTRIC TRANSITION OF BaxSr1-xTiO3 FILMS
S. F. Karmanenko, A. I. Dedyk, Y.-J. Oh*, V. I. Sakharov** and I. T. Serenkov**(Electrotechnical University, *Korea Institute of Science and Technolory and **A. F. Ioffe
Physical Technical Institute)

31H-PP1-33P

CHARACTERIZATION AND MODELING OF FERROELECTRIC THIN FILM INTEGRATINGTEMPERATURE AND AGEING DEPENDANCE
L. Cima and E. Labouré (Ecole Normale Supérieure de Cachan)

31H-PP1-34P

A MODEL FOR SWITCHING IN FERROELECTRIC THIN FILMS BY NUCLEATION-GROWTH
OF DOMAINS WITH THREE-DIMENSIONAL POLARIZATION
D. Ricinschi, Y. Ishibashi*, Makoto Iwata**, Liliana Mitoseriu*** and Masanori Okuyama(Osaka Univ., *Aichi Shukutoku Univ., **Nagoya Inst and ***'Al. I. Cuza' Univ.)

31H-PP1-35P

EVALUATION OF PLZT THIN FILM SPUTTERED ON Pt/IrOx/Ir BOTTOM ELECTRODE
FOR FERROELECTRIC MEMORY APPLICATION
Y. Miyaguchi, T. Jimbo, S. Kikuchi, K. Suu and M. Ishikawa (ULVAC Inc.)

31H-PP1-36P

CURRENT-TEMPERATURE CHARACTERISTICS OF LOW-TEMPERATURE-SPUTTERED(Ba,Sr)TiO3 FILMS POST TREATED BY RAPID THERMAL ANNEALING
M.-W. Kuo, J.-S. Chen*, B. C. S. Chou*, D.-C. Shye, C.-K. Jan, M.-F. Wu*, H.-Y. Tseng, B.-S.
Chiou and H.-C. Cheng (National Chiao Tung University and *National Science Council, 20
R&D Road VI)

31H-PP1-37P

ELECTRICALLY ACTIVATED REJUVENATION OF RETENTION IN THERMALLYIMPRINTED PLZT CAPACITORS
S. Sun (Ramtron International Corporation)

31H-PP1-38P

AGING EFFECT IN SOL-GEL DERIVED LEAD ZIRCONATE TITANATE THIN FILMS
R. S. Katiyar, A. Dixit and S. B. Majumder (University of Puerto Rico)

31H-PP1-39P

CORRELATION BETWEEN MICROSTRUCTURE AND LOCAL FERROELECTRIC
PROPERTIES OF NON-c-ORIENTED EPITAXIAL SrBi2Ta2O9 THIN FILMS
C. Harnagea, A. Pignolet, M. Alexe, D. N. Zakharov, H. N. Lee and D. Hesse (Max Planck
Institute of Microstructure Physics)

31H-PP1-40P

RESISTANCE DEGRADATION OF ACCEPTOR DOPED Pt/Ba0.7Sr0.3TiO3/Pt THIN
FILM CAPACITORS: COMPARISON OF EXPERIMENT AND NUMERICAL SIMULATION
R. Liedtke*, U. Boettger* and R. Waser*,** (*RWTH Aachen and **Forschungszentrum
Jülich)31H-PP1-41P

POLARISATION STATE INSTABILITY IN SINGLE GRAINS OF Pb(Zr0.45Ti0.55)O3
THIN FILMS
E. L. Colla, K. Torii*, S. Hiboux, H. W. Song**, I. Stolichnov, A. Tagantsev, K. No and N.
Setter ( Swiss Federal Institute of Technology, *Hitachi Ltd.Kokubunji and **KAIST)

31H-PP1-42P

TRACER ISOTOPE STUDIES OF IONIC DEFECT REDISTRIBUTION DURING IMPRINT AND
FATIGUE TESTING OF PZT THIN FILMS
L. F. Schloss and P. C. McIntyre (Stanford University)

31H-PP1-43P

PHYSICAL PROPERTIES OF MOD DERIVED Bi4Ti3O12/Bi2SiO5/Si STRUCTURES
M. Yamaguchi, T. Nagatomo and Y. Masuda* (Shibaura Institute of Technology and*Hachinohe Institute of Technology)

31H-PP1-44P

ASYMMETRIC DIELECTRIC AND FERROELECTRIC BEHAVIOUR OF CSD ULTRA-THIN
Sr0.8Bi2.2Ta2O9 THIN FILMS
R. Jiménez, C. Alemany, A. González, M. L. Calzada and J. Mendiola (Inst. Ciencia deMateriales de Madrid (CSIC))

31H-PP1-45P

SPECIFIC HEAT AND THERMAL CONDUCTIVITY OF BaTiO3 POLYCRYSTALLINE THIN
FILMS
B. A. Strukov, S. T. Davitadze, S. N. Kravchun, B. M. Goltzman*, V. V. Lemanov* and S. G.
Shulman* (Moscow State University and *A.F.Ioffe Physico-TechnicalInstitute)

31H-PP1-46P

A METAL-FERROELECTRIC-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MEMORY
CELL
M. A. Bailey and F. D. Ho* (Tec-Masters Inc., and *University of Alabama in Huntsville)

Plenary
Noh Theatre
Plenary (III) (17:30 --- 18:30)
31A-PL3-1PL

SOLID FREEFORM FABRICATION: AN INTELLIGENT CAD-BASED SYSTEM FORFABRICATION OF NOVEL FUNCTIONAL ELECTROCERAMICS
A. Safari (Rutgers University)