S-191BxxxxA Series
AUTOMOTIVE, 125°C OPERATION, 6 V,
WINDOW VOLTAGE DETECTOR
WITH FAST DETECTION RESPONSE

www.ablic.com

Rev.1.2_00© ABLIC Inc., 2023-2024

This IC, developed using CMOS technology, is a high-accuracy window voltage detector that detects undervoltage andovervoltage. The detection voltage and release voltage are fixed internally with an accuracy of ±1.5%.
Apart from the power supply pin, the detection voltage input pin (SENSE pin) is also prepared, so the output is stable even if
the SENSE pin voltage (VSENSE) falls to 0 V.
The release signal can be delayed by setting a capacitor externally, and the release delay time accuracy is ±15% (CD =3.3 nF).
The output form is Nch open-drain output.
ABLIC Inc. offers FIT rate calculated based on actual customer usage conditions in order to support customer functionalsafety design.
For more information regarding our FIT rate calculation, contact our sales representatives.
CautionThis product can be used in vehicle equipment and in-vehicle equipment. Before using the product forthese purposes, it is imperative to contact our sales representatives.

 Features• Detection voltage:

Undervoltage detection voltage
Overvoltage detection voltage• Detection voltage accuracy:
Undervoltage detection voltage
Overvoltage detection voltage• Hysteresis width selectable from "Available" / "Unavailable":• Detection response time:• Release delay time accuracy:• Output form:• Current consumption:• Operation voltage range:• Operation temperature range:• Lead-free (Sn 100%), halogen-free• AEC-Q100 qualified*1*1.

0.6 V to 4.9 V (0.05 V step)
0.7 V to 5.5 V (0.05 V step)
±1.5%
±1.5%
"Available": 3.0%, 5.0%, 10.0%"Unavailable": 0%

10.0 μs typ.
±15% (CD = 3.3 nF)
Nch open-drain output
1.5 μA typ.
2.5 V to 6.0 V
Ta = −40°C to +125°C

Contact our sales representatives for details.

 Applications• Overvoltage detection of power supply for automotive electric component• Voltage monitoring of automotive ECUs, ADAS, etc.
• For automotive use (engine, transmission, suspension, ABS, related-devices for EV / HEV / PHEV, etc.)

 Packages• SOT-23-6• HSNT-8(1616)B

1

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
 Block Diagrams
1.

SOT-23-6
1. 1

Hysteresis width "Unavailable"

VDD

SENSE

−
+

Delay
circuit

RO

−
VREF
*1

+

*1

*1

*1

VSS

CD

*1.

Parasitic diodeFigure 1

Product Name
S-191B0xxxA
S-191B1xxxA
S-191B2xxxA
S-191B3xxxA
S-191B4xxxA

2

Hysteresis Width(VUVHYS, VOVHYS)
0%
0%
0%
0%
0%

RO Pin Output FormNch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output

RO Pin Output Logic
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
1. 2Hysteresis width "Available"
VDD

SENSE

−
+

Delay
circuit

RO

−
VREF
*1

+

*1

*1

*1

VSS

CD

*1.

Parasitic diodeFigure 2

Product Name
S-191BAxxxA
S-191BBxxxA
S-191BCxxxA
S-191BDxxxA
S-191BExxxA
S-191BGxxxA
S-191BHxxxA
S-191BJxxxA
S-191BKxxxA
S-191BLxxxA
S-191BNxxxA
S-191BPxxxA
S-191BQxxxA
S-191BRxxxA
S-191BSxxxA

Hysteresis Width(VUVHYS, VOVHYS)
3.0%
3.0%
3.0%
3.0%
3.0%
5.0%
5.0%
5.0%
5.0%
5.0%
10.0%
10.0%
10.0%
10.0%
10.0%

RO Pin Output FormNch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output

RO Pin Output Logic
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"3

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
2.

HSNT-8(1616)B
2. 1

Hysteresis width "Unavailable"
VDD

SENSE
OV

−
+

*1

Delay
circuit

−
VREF
*1

UV

+

*1

*1

*1

VSS

CD

*1.

Parasitic diodeFigure 3

Product Name
S-191B0xxxA
S-191B1xxxA
S-191B2xxxA
S-191B3xxxA
S-191B4xxxA

4Hysteresis Width(VUVHYS, VOVHYS)
0%
0%
0%
0%
0%

UV, OV Pin Output FormNch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output

UV, OV Pin Output Logic
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
2. 2

Hysteresis width "Available"
VDD

SENSE
OV

−
*1

+

Delay
circuit

−
VREF
*1

UV

+

*1

*1

*1

VSS

CD

*1.

Parasitic diodeFigure 4

Product Name
S-191BAxxxA
S-191BBxxxA
S-191BCxxxA
S-191BDxxxA
S-191BExxxA
S-191BGxxxA
S-191BHxxxA
S-191BJxxxA
S-191BKxxxA
S-191BLxxxA
S-191BNxxxA
S-191BPxxxA
S-191BQxxxA
S-191BRxxxA
S-191BSxxxA

Hysteresis Width(VUVHYS, VOVHYS)
3.0%
3.0%
3.0%
3.0%
3.0%
5.0%
5.0%
5.0%
5.0%
5.0%
10.0%
10.0%
10.0%
10.0%
10.0%

UV, OV Pin Output FormNch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output

UV, OV Pin Output Logic
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"

5

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
 AEC-Q100 Qualified
This IC supports AEC-Q100 for operation temperature grade 1.
Contact our sales representatives for details of AEC-Q100 reliability specification.

 Product Name Structure
1.

Product name
S-191B

xx

xx

A - xxxx U

7Environmental codeU:
Lead-free (Sn 100%), halogen-free
Package abbreviation and IC packing specifications*1
M6T1: SOT-23-6, Tape
A8T7: HSNT-8(1616)B, Tape
Operation temperatureA:
Ta = −40°C to +125°C
Overvoltage detection voltage*2, *3, *4
07 to 55
(e.g., when the overvoltage detection voltage is 0.7 V,
it is expressed as 07.
when the overvoltage detection voltage is 4.9 V,
it is expressed as 49.)
Hysteresis width*3, undervoltage detection voltage*3, *4
06 to 49, A6 to E9, G6 to L9, N6 to S9(e.g., when the hysteresis width (VUVHYS, VOVHYS) is 0%,
the undervoltage detection voltage is 0.6 V,
it is expressed as 06.
when the hysteresis width (VUVHYS, VOVHYS) is 3%,
the undervoltage detection voltage is 1.4 V,
it is expressed as B4.
when the hysteresis width (VUVHYS, VOVHYS) is 5%,
the undervoltage detection voltage is 4.9 V,
it is expressed as L9.
when the hysteresis width (VUVHYS, VOVHYS) is 10%,the undervoltage detection voltage is 2.5 V,
it is expressed as Q5.)
*1.
*2.
*3.

*4.

6

Refer to the tape drawing.
Set the overvoltage detection voltage higher than the undervoltage detection voltage.
For details on hysteresis width and undervoltage detection voltage, refer to Table 1 and "2. Function list of
product types". When determining the overvoltage detection voltage, undervoltage detection voltage andhysteresis width, refer to "3. Relationship between overvoltage detection voltage, undervoltage detection
voltage and hysteresis width" in " Usage Precautions".
If you request the product which has 0.05 V step, contact our sales representatives.

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
Table 1 Relationship Between Hysteresis Width, Undervoltage Detection Voltage and Product Name
Hysteresis Width(VUVHYS, VOVHYS)
0%
0%
0%
0%
0%
3.0%
3.0%
3.0%
3.0%
3.0%
5.0%
5.0%
5.0%
5.0%
5.0%
10.0%
10.0%
10.0%
10.0%
10.0%
*1.

Undervoltage Detection Voltage(VUVDET)
0.60 V to 0.95 V
1.00 V to 1.95 V
2.00 V to 2.95 V
3.00 V to 3.95 V
4.00 V to 4.90 V
0.60 V to 0.95 V
1.00 V to 1.95 V
2.00 V to 2.95 V
3.00 V to 3.95 V
4.00 V to 4.90 V
0.60 V to 0.95 V
1.00 V to 1.95 V
2.00 V to 2.95 V
3.00 V to 3.95 V
4.00 V to 4.90 V
0.60 V to 0.95 V
1.00 V to 1.95 V
2.00 V to 2.95 V
3.00 V to 3.95 V
4.00 V to 4.90 V

Product Name*1
S-191B0xxxA
S-191B1xxxA
S-191B2xxxA
S-191B3xxxA
S-191B4xxxA
S-191BAxxxA
S-191BBxxxA
S-191BCxxxA
S-191BDxxxA
S-191BExxxA
S-191BGxxxA
S-191BHxxxA
S-191BJxxxA
S-191BKxxxA
S-191BLxxxA
S-191BNxxxA
S-191BPxxxA
S-191BQxxxA
S-191BRxxxA
S-191BSxxxA

The first digit symbol after S-191B indicates the integer digits of hysteresis width and undervoltage detection
voltage. The second digit symbol after S-191B indicates the decimal place of the undervoltage detection
voltage.
Example: If the hysteresis width is 0% and the undervoltage detection voltage is 0.6 V, it is described as
S-191B06.
If the hysteresis width is 3% and the undervoltage detection voltage is 1.4 V, it is described as
S-191BB4.
If the hysteresis width is 5% and the undervoltage detection voltage is 4.9 V, it is described as
S-191BL9.
If the hysteresis width is 10% and the undervoltage detection voltage is 2.5 V, it is described as
S-191BQ5.

RemarkIf you request the product which has 0.05 V step, contact our sales representatives.

7

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
2.

Function list of product types
Table 2
Product Name
S-191B0xxxA
S-191B1xxxA
S-191B2xxxA
S-191B3xxxA
S-191B4xxxA
S-191BAxxxA
S-191BBxxxA
S-191BCxxxA
S-191BDxxxA
S-191BExxxA
S-191BGxxxA
S-191BHxxxA
S-191BJxxxA
S-191BKxxxA
S-191BLxxxA
S-191BNxxxA
S-191BPxxxA
S-191BQxxxA
S-191BRxxxA
S-191BSxxxA

3.

Hysteresis Width(VUVHYS, VOVHYS)
0%
0%
0%
0%
0%
3.0%
3.0%
3.0%
3.0%
3.0%
5.0%
5.0%
5.0%
5.0%
5.0%
10.0%
10.0%
10.0%
10.0%
10.0%

RO / UV, OV Pin Output Form

RO / UV, OV Pin Output Logic

Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output
Nch open-drain output

Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"
Active "L"

Packages
Table 3 Package Drawing Codes
Package Name
SOT-23-6
HSNT-8(1616)B

8

Dimension
MP006-A-P-SD
PY008-B-P-SD

Tape
MP006-A-C-SD
PY008-B-C-SD

Reel
MP006-A-R-SD
PY008-B-R-SD

Land−
PY008-B-L-SD

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
 Pin Configurations
1.

SOT-23-6
Top view
6 5 4

1 2 3

Figure 5

*1.
*2.

2.

Table 4
Pin No.
1
2
3
4
5
6

Symbol
SENSE
VDD
NC*1
RO
VSS
CD*2

Description
Detection voltage input pin
Voltage input pin
No connection
Voltage detection output pin
GND pinConnection pin for release delay time adjustment capacitor

The NC pin is electrically open.
The NC pin can be connected to the VDD pin or the VSS pin.
Connect a capacitor between the CD pin and the VSS pin. The release delay time can be adjusted according to
the capacitance.

HSNT-8(1616)B
Top view
1

8

4

5

Bottom view
8

1

5

4
*1

Table 5
Pin No.
1
2
3
4
5
6
7
8

Symbol
NC*2
VDD
NC*2
SENSE
CD*3
VSS
UV
OV

Description
No connection
Voltage input pin
No connection
Detection voltage input pin
Connection pin for release delay time adjustment capacitor
GND pin
Undervoltage detection output pin
Overvoltage detection output pin

Figure 6
*1.
*2.
*3.

Connect the heat sink of backside at shadowed area to the board, and set electric potential GND.
However, do not use it as the function of electrode.
The NC pin is electrically open.
The NC pin can be connected to the VDD pin or the VSS pin.
Connect a capacitor between the CD pin and the VSS pin. The release delay time can be adjusted according to
the capacitance.

9

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
 Absolute Maximum Ratings
Table 6
(Ta = −40°C to +125°C unless otherwise specified)
Item
Power supply voltage
SENSE pin voltage
CD pin input voltage
SOT-23-6
Output voltage

HSNT-8(1616)B
SOT-23-6

Output current

HSNT-8(1616)B

Junction temperature
Operation ambient temperature
Storage temperature
CautionSymbolVDD
VSENSE
VCD
VRO
VUV
VOV
IRO
IUV
IOV
Tj
Topr
Tstg

Absolute Maximum Rating
VSS − 0.3 to VSS + 7.0
VSS − 0.3 to VSS + 7.0
VSS − 0.3 to VDD + 0.3 ≤ VSS + 7.0
VSS − 0.3 to VSS + 7.0
VSS − 0.3 to VSS + 7.0
VSS − 0.3 to VSS + 7.0
25
25
25−40 to +150
−40 to +125
−40 to +150

Unit
V
V
V
V
V
V
mA
mA
mA
°C
°C
°C

The absolute maximum ratings are rated values exceeding which the product could suffer physicaldamage. These values must therefore not be exceeded under any conditions.

 Thermal Resistance Value
Table 7
Item

Junction-to-ambient thermal resistance*1

*1.

θJA

Condition
Board A
Board B
Board C
SOT-23-6
Board D
Board E
Board A
Board B
HSNT-8(1616)B Board C
Board D
Board E

Test environment: compliance with JEDEC STANDARD JESD51-2A

Remark10

SymbolRefer to " Power Dissipation" and "Test Board" for details.

Min.
−
−
−
−
−
−
−
−
−
−

Typ.
159
124
−
−
−
214
172
52
55
43

Max.
−
−
−
−
−
−
−
−
−
−

Unit
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series Electrical Characteristics
1.

SOT-23-6
Table 8Item

Undervoltage detection voltage*1
Overvoltage detection voltage*2

Undervoltage hysteresis width*3

Overvoltage hysteresis width*3

Current consumption
Operation voltage
Output current

Leakage current
Detection response time*5
Release delay time*6
SENSE pin resistanceCD pin discharge ON resistance
*1.
*2.
*3.

*4.
*5.

*6.

(Ta = −40°C to +125°C unless otherwise specified)
Test
SymbolCondition
Min.
Typ.
Max.
Unit
CircuitVUVDET(S)VDD = 5.0 V,
VUVDET(S)VUVDET(S)V
1
VUVDET
0.6 V ≤ VUVDET(S) ≤ 4.9 V
× 0.985
× 1.015
VOVDET(S)VDD = 5.0 V,
VOVDET(S)VOVDET
VOVDET(S)V
1
0.7 V ≤ VOVDET(S) ≤ 5.5 V
× 0.985
× 1.015
S-191B06xx to S-191B49xx
VUVDET−−V
1(VUVHYS = 0%)
× 0.00S-191BA6xx to S-191BE9xx
VUVDET
VUVDET
VUVDETV
1(VUVHYS = 3.0%)
× 0.02× 0.03× 0.04VUVHYSVUVDET
S-191BG6xx to S-191BL9xx
VUVDET
VUVDETV
1(VUVHYS = 5.0%)
× 0.04
× 0.05× 0.06
S-191BN6xx to S-191BS9xx
VUVDET
VUVDET
VUVDETV
1(VUVHYS = 10.0%)
× 0.09× 0.10× 0.11
S-191B06xx to S-191B49xx
VOVDET−−V
1(VOVHYS = 0%)
× 0.00VOVDET
S-191BA6xx to S-191BE9xx
VOVDET VOVDETV
1(VOVHYS = 3.0%)
× 0.02× 0.03× 0.04
VOVHYSVOVDET
S-191BG6xx to S-191BL9xx
VOVDET VOVDETV
1(VOVHYS = 5.0%)
× 0.04
× 0.05× 0.06
S-191BN6xx to S-191BS9xx
VOVDET
VOVDET VOVDETV
1(VOVHYS = 10.0%)
× 0.09× 0.10× 0.11
VDD = 5.0 V,
ISS1
−
1.5
2.6
μA
4
VSENSE = (VUVREL(S) + VOVREL(S)) / 2
VDD
−
2.5
−
6.0
V
1
RO pin Nch driver,
2.50
−
−
mA
2
IOUT
VDD = 2.5 V, VDS*4 = 0.5 V,
VSENSE = VUVDET(S) − 0.5 V
RO pin Nch driver,ILEAK
VDD = 6.0 V, VRO = 6.0 V,
−
−
0.20
μA
2
VSENSE = (VUVREL(S) + VOVREL(S)) / 2
tRESET
−
−
10.0
40.0
μs
3
tDELAYCD = 3.3 nF
8.5
10.0
11.5
ms
3
RSENSE
−
3.3
−
42.5
MΩ
4
RCDD
VDD = 2.5 V, VCD = 0.7 V
0.15
−
0.90
kΩ
−

VUVDET: Actual undervoltage detection voltage value, VUVDET(S): Set undervoltage detection voltage value
VOVDET: Actual overvoltage detection voltage value, VOVDET(S): Set overvoltage detection voltage value
VUVREL: Actual undervoltage release voltage value, VUVREL(S): Set undervoltage release voltage value
VOVREL: Actual overvoltage release voltage value, VOVREL(S): Set overvoltage release voltage value
VUVREL and VOVREL are as follows.
Hysteresis width "Unavailable":
VUVREL = VUVDET, VOVREL = VOVDETHysteresis width "Available":
VUVREL = VUVDET + VUVHYS, VOVREL = VOVDET − VOVHYS
VDS: Drain-to-source voltage of the output transistor
The time period from when the pulse voltage of VUVDET(S) + 0.5 V → VUVDET(S) − 0.5 V or VOVDET(S) − 0.5 V → VOVDET(S) +0.5 V is applied to the SENSE pin after VSENSE reaches the release voltage once, until VUV or VOV reaches 50% of VDD.
It is the time period for VUV or VOV to reach 50% of VDD after applying a pulse voltage of (VUVREL(S) + VOVREL(S)) / 2 →VUVREL(S) − 0.5 V or (VUVREL(S) + VOVREL(S)) / 2 → VOVDET(S) + 0.5 V to the SENSE pin, in case of VOVDET(S) − VUVDET(S) ≤0.5 V.
The time period from when the pulse voltage of VUVREL(S) − 0.5 V → VUVREL(S) × 1.03 V or VOVREL(S) + 0.5 V → VOVREL(S) ×
0.97 V is applied to the SENSE pin to when VUV or VOV reaches 50% of VDD.

11

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
2.

HSNT-8(1616)B
Table 9Item

Undervoltage detection voltage*1
Overvoltage detection voltage*2

Undervoltage hysteresis width*3

Overvoltage hysteresis width*3

Current consumption
Operation voltage

Output current

Leakage current

Detection response time*5
Release delay time*6
SENSE pin resistanceCD pin discharge ON resistance
*1.
*2.
*3.

*4.
*5.
*6.

12

(Ta = −40°C to +125°C unless otherwise specified)
Test
SymbolCondition
Min.
Typ.
Max.
Unit
CircuitVUVDET(S)VDD = 5.0 V,
VUVDET(S)VUVDET(S)V
5
VUVDET
0.6 V ≤ VUVDET(S) ≤ 4.9 V
× 0.985
× 1.015
VOVDET(S)VDD = 5.0 V,
VOVDET(S)VOVDET
VOVDET(S)V
5
0.7 V ≤ VOVDET(S) ≤ 5.5 V
× 0.985
× 1.015
S-191B06xx to S-191B49xx
VUVDET−−V
5(VUVHYS = 0%)
× 0.00S-191BA6xx to S-191BE9xx
VUVDET
VUVDET VUVDETV
5(VUVHYS = 3.0%)
× 0.02× 0.03× 0.04VUVHYSVUVDET
S-191BG6xx to S-191BL9xx
VUVDET VUVDETV
5(VUVHYS = 5.0%)
× 0.04
× 0.05× 0.06
S-191BN6xx to S-191BS9xx
VUVDET
VUVDET VUVDETV
5(VUVHYS = 10.0%)
× 0.09× 0.10× 0.11VOVDET
S-191B06xx to S-191B49xx−
V5−
× 0.00(VOVHYS = 0%)
VOVDET
S-191BA6xx to S-191BE9xx
VOVDET VOVDETV
5(VOVHYS = 3.0%)
× 0.02× 0.03× 0.04
VOVHYSVOVDET
S-191BG6xx to S-191BL9xx
VOVDET VOVDETV
5(VOVHYS = 5.0%)
× 0.04
× 0.05× 0.06
S-191BN6xx to S-191BS9xx
VOVDET
VOVDET VOVDETV
5(VOVHYS = 10.0%)
× 0.09× 0.10× 0.11
VDD = 5.0 V,
ISS1
−
1.5
2.6
μA
8
VSENSE = (VUVREL(S) + VOVREL(S)) / 2
VDD
−
2.5
−
6.0
V
5
UV pin Nch driver,
2.50
−
−
mA
6
VDD = 2.5 V, VDS*4 = 0.5 V,
VSENSE = VUVDET(S) − 0.5 V
IOUT
OV pin Nch driver,
2.50
−
−
mA
6
VDD = 2.5 V, VDS*4 = 0.5 V,
VSENSE = VOVDET(S) + 0.5 V
UV pin Nch driver,
−
−
0.10
μA
6
VDD = 6.0 V, VUV = 6.0 V,
VSENSE = 6.0 V
ILEAK
OV pin Nch driver,
−
−
0.10
μA
6
VDD = 6.0 V, VOV = 6.0 V,
VSENSE = 0 V
tRESET
−
−
10.0
40.0
μs
7
tDELAYCD = 3.3 nF
8.5
10.0
11.5
ms
7
RSENSE
−
3.3
−
42.5
MΩ
8
RCDD
VDD = 2.5 V, VCD = 0.7 V
0.15
−
0.90
kΩ
−

VUVDET: Actual undervoltage detection voltage value, VUVDET(S): Set undervoltage detection voltage value
VOVDET: Actual overvoltage detection voltage value, VOVDET(S): Set overvoltage detection voltage value
VUVREL: Actual undervoltage release voltage value, VUVREL(S): Set undervoltage release voltage value
VOVREL: Actual overvoltage release voltage value, VOVREL(S): Set overvoltage release voltage value
VUVREL and VOVREL are as follows.
Hysteresis width "Unavailable":
VUVREL = VUVDET, VOVREL = VOVDETHysteresis width "Available":
VUVREL = VUVDET + VUVHYS, VOVREL = VOVDET − VOVHYS
VDS: Drain-to-source voltage of the output transistor
The time period from when the pulse voltage of VUVDET(S) + 0.5 → VUVDET(S) − 0.5 V or VOVDET(S) − 0.5 V → VOVDET(S) +0.5 V is applied to the SENSE pin after VSENSE reaches the release voltage once, until VUV or VOV reaches 50% of VDD.
The time period from when the pulse voltage of VUVREL(S) − 0.5 V → VUVREL(S) × 1.03 V or VOVREL(S) + 0.5 V → VOVREL(S) ×
0.97 V is applied to the SENSE pin to when VUV or VOV reaches 50% of VDD.

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
 Test Circuits
1.

SOT-23-6R
100 kΩ

VDD
SENSE
+
V

VSS

VDD
SENSE

RO
CD

VSS

+
V

Figure 7 Test Circuit 1

SENSE
VSS

Figure 9 Test Circuit 3

+
V

VDD
+

RO
CD

CD

+

Figure 8 Test Circuit 2R
100 kΩ

VDD

A

RO

A
+

A

SENSE
+

Oscilloscope

V

VSS

RO
CD

Figure 10 Test Circuit 4

13

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
2.

HSNT-8(1616)B
R
R
100 kΩ 100 kΩ

VDD
SENSE
+
V

VSS

CD

VDD

OV

SENSE

UV

VSS

+
V

+
V

Figure 11 Test Circuit 5

SENSE

OV

VSS

UV

CD

Figure 13 Test Circuit 7

14

CD

UV

+

+
V

V

Figure 12 Test Circuit 6RR
100 kΩ 100 kΩ

VDD

A

OV

VDD
+

A
+

A

SENSE
+

Oscilloscope

V

VSS

OV
CD

Figure 14 Test Circuit 8

UV

+

A

+

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
 Standard Circuit1.

SOT-23-6

R1*2

VDD
SENSE
VSS

RO
CD
CD*1

CD is a release delay time adjustment capacitor. The CD should be connected directly to the CD pin and the VSS
pin.
R1 is the external pull-up resistors for the output pin.

*1.
*2.

Figure 15

2.

HSNT-8(1616)B

R2*2

VDD
SENSE
VSS

R1*2

OV
UV

CD

CD*1

CD is a release delay time adjustment capacitor. The CD should be connected directly to the CD pin and the VSS
pin.
R1, R2 are the external pull-up resistors for the output pin.

*1.
*2.

Figure 16
Caution

The above connection diagram and constants will not guarantee successful operation. Perform thoroughevaluation including the temperature characteristics with an actual application to set the constants.

 Condition of Application
Release delay time adjustment capacitor (CD): A ceramic capacitor with capacitance of 0.33 nF or more is recommended.

 Selection of Release Delay Time Adjustment Capacitor (CD)In this IC, the release delay time adjustment capacitor (CD) is necessary between the CD pin and the VSS pin to adjust
the release delay time (tDELAY) of the detector. Refer to "3. Delay circuit" in " Operation" for details.
Caution

Perform thorough evaluation including the temperature characteristics with an actual application to
select CD.

15

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
 Explanation of Terms
1.

Detection voltage (VUVDET, VOVDET)The detection voltage is a SENSE pin voltage at which the output voltage in Figure 21 or Figure 22 turns to "L". The
detection voltage varies slightly among products of the same specification. The variation of detection voltage between
the specified minimum and the maximum is called the detection voltage range (Refer to "Figure 17 Overvoltage
Detection Voltage", "Figure 19 Undervoltage Detection Voltage").
Table 10Detection Operation
Undervoltage detection
Overvoltage detection

Detection Voltage
VUVDET
VOVDET

Output Voltage
VRO / VUV = "H" → "L"
VRO / VOV = "H" → "L"

Detection Voltage Range
VUVDET min. to VUVDET max.
VOVDET min. to VOVDET max.

Example: In VUVDET = 4.0 V product, the detection voltage is at any point in the range of 3.940 V ≤ VUVDET ≤ 4.060 V.
This means that some VUVDET = 4.0 V product has VUVDET = 3.940 V and some has VUVDET = 4.060 V.

2.

Release voltage (VUVREL, VOVREL)
The release voltage is a SENSE pin voltage at which the output voltage in Figure 21 or Figure 22 turns to "H". The
release voltage varies slightly among products of the same specification. The variation of release voltage between thespecified minimum and the maximum is called the release voltage range (Refer to "Figure 18 Overvoltage Release
Voltage", "Figure 20 Undervoltage Release Voltage").
The release voltage becomes the value differs from the detection voltage within the range shown below.
• S-191BA6xx to S-191BE9xx: 2% to 4% (3% typ.)• S-191BG6xx to S-191BL9xx: 4% to 6% (5% typ.)• S-191BN6xx to S-191BS9xx: 9% to 11% (10% typ.)
Table 11
Detection Operation
Undervoltage detection
Overvoltage detection

Release Voltage
VUVRELVOVREL

Output Voltage
VRO / VUV = "L" → "H"
VRO / VOV = "L" → "H"

Release Voltage Range
VUVREL min. to VUVREL max.
VOVREL min. to VOVREL max.

Example: For S-191BS0xx, VUVDET = 4.0 V product, the release voltage is at any point in the range of 4.29 V ≤ VUVREL≤ 4.51 V despite VUVREL = 4.40 V typ.
This means that S-191BS0xx, VUVDET = 4.0 V product has VUVREL = 4.29 V and some has VUVREL = 4.51 V.

16

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
VSENSE

Detection voltage
VOVDET max.

Detection voltage

VSENSE

VOVREL max.

range

VOVDET min.

Release voltage
Release voltage
range

VOVREL min.

tRESETtDELAY
VRO / VOVVRO / VOV

Figure 17 Overvoltage Detection Voltage

Figure 18 Overvoltage Release Voltage
Release voltage

Detection voltage

VSENSEVUVDET max.

Detection voltage

VUVREL max.

range

VUVDET min.

Release voltage
range

VUVREL min.
VSENSEtRESET
VRO / VUVtDELAY

VRO / VUV

Figure 19 Undervoltage Detection Voltage

VDD

Figure 20 Undervoltage Release Voltage

R1
100 kΩ

VDD
SENSE
+
V

VSS

RO
CD

VSENSE+V

CD

Figure 21 Test Circuit of Detection Voltage and Release Voltage for SOT-23-6

VDD

VDD
SENSE
+
V

VSENSE

VSS

OV
CD

UV

R2
100 kΩ R1
100 kΩ
+
V

+
V

CD

Figure 22 Test Circuit of Detection Voltage and Release Voltage for HSNT-8(1616)B

17

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
3.

Hysteresis width (VUVHYS, VOVHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage. Setting thehysteresis width between the detection voltage and the release voltage, prevents malfunction caused by noise on the
input voltage.
• Undervoltage hysteresis width (VUVHYS): VUVREL − VUVDET• Overvoltage hysteresis width (VOVHYS): VOVDET − VOVREL

4.

Feed-through current
The feed-through current is a current that flows instantaneously to the VDD pin at the time of detection and release of
a voltage detector.

18

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
 Operation
1.

Basic operation
Figure 23, Figure 25, Figure 27, and Figure 29 show that RO pin or UV and OV pins being pulled up by resistors (R1,
R2) is an example of basic detector block operation.
1. 1

SOT-23-6

1. 1. 1

Hysteresis width "Unavailable"(1) Undervoltage detection status to release status (undervoltage release status)
When the SENSE pin voltage (VSENSE) exceeds the undervoltage release voltage (VUVREL = VUVDET), the RO pin
voltage output becomes "H" after release delay time (tDELAY).
(2) Release status to overvoltage detection status
VSENSE rises, and when it exceeds the overvoltage detection voltage (VOVDET), the RO pin output becomes "L"after detection response time (tRESET).
(3) Overvoltage detection status to release status (overvoltage release status)
VSENSE drops, and when it goes below the overvoltage release voltage (VOVREL = VOVDET), the RO pin output
changes to "H" after tDELAY.
(4) Release status to undervoltage detection status
VSENSE drops, and when it goes below the undervoltage detection voltage (VUVDET), the RO pin output becomes"L" after tRESET and changes to undervoltage detection status.

R1
VDD

100 kΩ

SENSE

−
+
VDD

VSENSERO
Delay
circuit

VRO

*1

+

−
VREF
VSS

*1

V

+

*1

*1

CD
CD

*1. Parasitic diodeFigure 23 Operation

19

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00

(1)

(2)

(3)

VOVDETVSENSE(4)

VOVREL

VUVRELVUVDETt DELAYt RESETt DELAY

VRO

Figure 24 Timing Chart

20

(1)

VUVRELt RESETt DELAYAUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
1. 1. 2Hysteresis width "Available"(1) Undervoltage detection status to release status (undervoltage release status)
When the SENSE pin voltage (VSENSE) exceeds the undervoltage release voltage (VUVREL = VUVDET + VUVHYS),
the RO pin voltage output becomes "H" after release delay time (tDELAY).
(2) Release status to overvoltage detection status
VSENSE rises, and when it exceeds the overvoltage detection voltage (VOVDET), the RO pin output becomes "L"after detection response time (tRESET).
(3) Overvoltage detection status to release status (overvoltage release status)
VSENSE drops, and when it goes below the overvoltage release voltage (VOVREL = VOVDET − VOVHYS), the RO pin
output changes to "H" after tDELAY.
(4) Release status to undervoltage detection status
VSENSE drops, and when it goes below the undervoltage detection voltage (VUVDET), the RO pin output becomes"L" after tRESET and changes to undervoltage detection status.

R1
VDD

100 kΩ

SENSE

−
+
VDD

VSENSERO
Delay
circuit

VRO

*1

+

−
VREF
VSS

*1

V

+

*1

*1

CD
CD

*1. Parasitic diodeFigure 25 Operation

21

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00

(1)

(2)

(3)

VOVDETVSENSE(4)

VOVRELVUVHYSVOVHYS

VUVRELVUVDETt DELAYt RESETt DELAY

VRO

Figure 26 Timing Chart

22

(1)

t RESET

VUVRELt DELAYAUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
1. 2

HSNT-8(1616)B

1. 2. 1

Hysteresis width "Unavailable"(1) Undervoltage detection status to release status (undervoltage release status)
When the SENSE pin voltage (VSENSE) exceeds the undervoltage release voltage (VUVREL = VUVDET), the UV pin
voltage output becomes "H" after release delay time (tDELAY). At this time, the OV pin output stays at "H".
(2) Release status to overvoltage detection status
VSENSE rises, and when it exceeds the overvoltage detection voltage (VOVDET), the OV pin output becomes "L"after detection response time (tRESET). At this time, the UV pin stays at "H".
(3) Overvoltage detection status to release status (overvoltage release status)
VSENSE drops, and when it goes below the overvoltage release voltage (VOVREL = VOVDET), the OV pin output
changes to "H" after tDELAY. At this time, the UV pin output stays at "H".
(4) Release status to undervoltage detection status
VSENSE drops, and when it goes below the undervoltage detection voltage (VUVDET), the UV pin output becomes"L" after tRESET and changes to undervoltage detection status. At this time, the OV pin output stays at "H".

R1

R2

100 kΩ

100 kΩ

VDD

SENSE

OV

VOV

−
+
VDD

VSENSE*1

Delay
circuit

UV

−
VREF
VSS

*1

+

VUV

*1

*1

*1

+
V

+
V

CD
CD

*1. Parasitic diodeFigure 27 Operation

23

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00

(1)

(2)

(3)

VOVDETVSENSE(4)(1)

VOVREL

VUVRELVUVDETt RESET

VUVRELt DELAYVOVt DELAYt RESET

VUV

Figure 28 Timing Chart

24t DELAYAUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
1. 2. 2Hysteresis width "Available"(1) Undervoltage detection status to release status (undervoltage release status)
When the SENSE pin voltage (VSENSE) exceeds the undervoltage release voltage (VUVREL = VUVDET + VUVHYS),
the UV pin voltage output becomes "H" after release delay time (tDELAY). At this time, the OV pin output stays at"H".
(2) Release status to overvoltage detection status
VSENSE rises, and when it exceeds the overvoltage detection voltage (VOVDET), the OV pin output becomes "L"after detection response time (tRESET). At this time, the UV pin stays at "H".
(3) Overvoltage detection status to release status (overvoltage release status)
VSENSE drops, and when it goes below the overvoltage release voltage (VOVREL = VOVDET − VOVHYS), the OV pin
output changes to "H" after tDELAY. At this time, the UV pin output stays at "H".
(4) Release status to undervoltage detection status
VSENSE drops, and when it goes below the undervoltage detection voltage (VUVDET), the UV pin output becomes"L" after tRESET and changes to undervoltage detection status. At this time, the OV pin output stays at "H".

R1

R2

100 kΩ

100 kΩ

VDD

SENSE
OV

VOV

−
+

VDD

VSENSE*1

Delay
circuit

UV

−

VREF
VSS

*1

+

VUV

*1

*1

*1

+

V

+

V

CD
CD

*1. Parasitic diodeFigure 29 Operation

25

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00

(1)

(2)

(3)

VOVDETVSENSE(4)

VOVREL

VUVRELVUVHYSVOVHYS

VUVRELVUVDETt RESET(1)t DELAYVOVt DELAYt RESET

VUV

Figure 30 Timing Chart

26t DELAYAUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
2.

SENSE pin
The SENSE pin is the input pin for the detection voltage. The power supply VDD pin and SENSE pin, for voltage
detection, are divided. Therefore, as long as a voltage is supplied to the VDD pin, the reset signal will be held even if
the input voltage to the SENSE pin drops below the minimum operation voltage.
2. 1 Error when detection voltage is set externally
The undervoltage detection voltage and the overvoltage detection voltage can be set externally by connecting anode that was resistance-divided by the resistor (RA) and the resistor (RB) to the SENSE pin as shown in Figure
31 and Figure 32.
For conventional products without the SENSE pin, external resistor cannot be too large since theresistance-divided node must be connected to the VDD pin. This is because a feed-through current will flow
through the VDD pin when it goes from detection to release, and if external resistor is large, problems such as
oscillation or larger error in the hysteresis width may occur.
In this IC, RA and RB in Figure 31 and Figure 32 are easily made larger since the resistance-divided node can beconnected to the SENSE pin through which no feed-through current flows. However, be careful of error in thecurrent flowing through the internal resistance (RSENSE) that will occur.
Although RSENSE*1 in this IC is large to make the error small, RA and RB should be selected such that the error iswithin the allowable limits.
*1. 3.3 MΩ min.

27

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
2. 2 Selection of RA and RB
In Figure 31 and Figure 32, the relation between the external setting undervoltage detection voltage (VDUX) or
the overvoltage detection voltage (VDOX) and the actual detection voltage (VUVDET, VOVDET) is ideally calculated by
the equation below.
RA
VDUX = VUVDET × (1 + R ) ······································(1)B

RA
VDOX = VOVDET × (1 + R ) ······································(1)B
However, in reality there is an error in the current flowing through RSENSE.
When considering this error, the relation between VDUX, VDOX, VUVDET and VOVDET is calculated as follows.
RA
VDUX = VUVDET × (1 + R || R
)
B
SENSE
RA

= VUVDET × 1 +
 RB × RSENSE  RB + RSENSE RARA= VUVDET × (1 + R ) + R
× VUVET ············(2)
B
SENSE
RA
RA
VDOX = VOVDET × (1 + R ) + R
× VOVET ············(2)B
SENSE
By using equations (1) and (2), the error is calculated as VUVDET × R

RA

SENSE

, VOVDET × R

RA

SENSE

.

The error rate is calculated as follows by dividing the error by the right-hand side of equation (1).
RA || RB
RA × RB
× 100 [%] = R
× 100 [%] ····(3)SENSE
RSENSE × (RA + RB)
As seen in equation (3), the smaller the resistance values of RA and RB compared to RSENSE, the smaller the error
rate becomes.
Also, the relation between the external setting undervoltage hysteresis width (VHUX) or the overvoltage hysteresis
width (VHOX) and the hysteresis width (VUVHYS, VOVHYS) is calculated by equation below. Error due to RSENSE also
occurs to the relation in a similar way to the detection voltage.
RA
VHUX = VUVHYS × (1 + R ) ·······································(4)B

RA
VHOX = VOVHYS × (1 + R ) ·······································(4)
B
A

A

VDUX
VDOX

RA
VUVDET
VOVDET
RB

VDD

VDUX

SENSE
RSENSERO

VSS

Figure 31 Detection Voltage External
Setting Circuit of SOT-23-6
Caution

28

VDOX

RA
VUVDET
VOVDET
RB

VDD
SENSE
RSENSEOVUVVSSFigure 32 Detection Voltage External
Setting Circuit of HSNT-8(1616)B

If RA and RB are large, the SENSE pin input impedance becomes higher and may cause a
malfunction due to noise. In this case, connect a capacitor between the SENSE pin and the
VSS pin.

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
3.

Delay circuit
The delay circuit comes with a function for adjusting the release delay time (tDELAY) from when the SENSE pin voltage(VSENSE) enters the state in Table 12 and until the output pin inverts.
Table 12
Release operation
Undervoltage release
Overvoltage release

StatusUndervoltage release voltage (VUVREL = VUVDET + VUVHYS) or more
Overvoltage release voltage (VOVREL = VOVDET − VOVHYS) or lower

Output Pin
RO pin / UV pin
RO pin / OV pintDELAY is determined by the delay coefficient, the release delay time adjustment capacitor (CD) and the release delay
time when the CD pin is open (tDELAY0). They are calculated by the equations below.
tDELAY [ms] = Delay coefficient × CD [nF] + tDELAY0 [ms]Table 13
Operation
Temperature
Ta = +125°C
Ta = +25°C
Ta = −40°C

Min.

Delay Coefficient
Typ.

Max.

2.64
2.67
2.72

2.90
3.00
3.00

3.24
3.18
3.34

Table 14
Operation
Temperature
Ta = +125°C
Ta = +25°C
Ta = −40°C

Release Delay Time when CD Pin is Open (tDELAY0)
Min.
Typ.
Max.
0.05
0.05
0.06

0.09
0.10
0.11

0.24
0.22
0.27

Caution 1.

Mounted board layout should be made in such a way that no current flows into or flows fromthe CD pin since the impedance of the CD pin is high, otherwise correct delay time cannot beprovided.
2. There is no limit for the capacitance of CD as long as the leakage current of the capacitor canbe ignored against the built-in constant current value (approximately 160 nA). The leakage
current may cause error in delay time. When the leakage current is larger than the built-in
constant current, no detect or release takes place.
3. The above equations will not guarantee successful operation. Determine the capacitance of CD
through thorough evaluation including temperature characteristics in the actual usage
conditions.
4. When the CD pin is open, a double pulse may appear at release.
To avoid the double pulse, attach 0.33 nF or more capacitor to the CD pin.

29

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
 Usage Precautions
1.

Feed-through current at the time of detection and release
In this IC, a feed-through current flows instantaneously at the time of detection and release. Therefore, if the input
impedance is increased, oscillation may occur due to the voltage drop caused by the feed-through current.
When this IC is used in the configuration shown in Figure 33 and Figure 34, the input impedance is recommended
to be 1 kΩ or less.
Perform a sufficient evaluation including the temperature characteristics under the actual operating conditions.
RA

VDD

RA

VDD
VBAT

VDD
RO

SENSE
VSS

VBAT

OV

SENSE
VSS

CD

Figure 33 For SOT-23-6

2.

VDD

UV
CD

Figure 34 For HSNT-8(1616)B

Power on sequence
Turn on the power in one of the following two procedures.
(1) Order of VDD pin and SENSE pin (Refer to Figure 35)(2) VDD pin and SENSE pin at the same time
When VOVDET ≥ VSENSE ≥ VUVREL applies, both the overvoltage output voltage (VOV) and the undervoltage output voltage(VUV) become "H", and the detector enters release status.

VDD

VDD min.
VUVRELVSENSEtDELAY

VRO

VUV

VOV

Figure 35
Caution30

When the SENSE pin is turned on before the VDD pin, a release may mistakenly occur even if
VSENSE is less than VUVREL.

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series

3.

Relationship between overvoltage detection voltage, undervoltage detection voltage andhysteresis width
The nominal voltage range (VNOMINAL) monitored by customers is defined as shown in Figure 36.
To ensure an appropriate VNOMINAL value, set the overvoltage detection voltage and undervoltage detection voltage
considering the detection voltage variation, hysteresis width, and released voltage variation.
The relationship among VNOMINAL, maximum value of undervoltage release voltage (VUVREL max.) and the minimum
value of the overvoltage release voltage (VOVREL min.) must satisfy equation (1).

VOVREL min.
VNOMINAL = VOVREL min. − VUVREL max. > 0 ············ (1)VNOMINAL
VUVREL max.
Figure 36 VNOMINAL > 0

The equations below show the relationship among VUVREL max., VOVREL min., the set undervoltage detection voltage(VUVDET(S)), the set overvoltage detection voltage (VOVDET(S)), the undervoltage hysteresis width (VUVHYS), and theovervoltage hysteresis width (VOVHYS).
VUVREL max. = VUVDET max. × (1 + VUVHYS max.) = VUVDET(S) × 1.015 × (1 + VUVHYS + 0.01) ··········· (2)VOVREL min. = VOVDET min. × (1 − VOVHYS max.) = VOVDET(S) × 0.985 × (1 − VOVHYS − 0.01) ············ (3)Based on equations (2) and (3), the following equation must be satisfied regarding VNOMINAL, VOVDET(S) and VUVDET(S).
VNOMINAL = VOVDET(S) × 0.985 × (1 − VOVHYS − 0.01) − VUVDET(S) × 1.015 × (1 + VUVHYS + 0.01) > 0 ··········· (4)For example, calculating if it is possible to set VUVDET(S) = 3.0 V, VOVDET(S) = 3.6 V, and VOVHYS = VUVHYS = 5% typ.
(accuracy ±1%), the following equation is generated.
VNOMINAL = 3.6 V × 0.985 × (1 − 0.06) − 3.0 V × 1.015 × (1 + 0.06) = 0.106 V
Since VNOMINAL is greater than 0, it can be determined that it is possible to set.

VOVDET(S) +1.5%

VOVDET max.
VOVDET(S)VOVDET(S) ±1.5%

VOVDET min.

VOVDET(S) −1.5%
VHYS max. = VHYS (3%, 5%, 10%) +1%
VOVDET min. − VHYS max.

VOVREL min.
VNOMINAL
VUVREL max.

VUVDET max. + VHYS max.
VHYS max. = VHYS (3%, 5%, 10%) +1%
VUVDET(S) +1.5%

VUVDET max.
VUVDET(S)VUVDET(S) ±1.5%

VUVDET min.

VUVDET(S) −1.5%

Figure 37

31

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
 Precautions• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• Because the SENSE pin has a high impedance, malfunctions may occur due to noise.
Be careful of wiring adjoining SENSE pin wiring in actual applications.
• When designing for mass production using an application circuit described herein, the product deviation andtemperature characteristics should be taken into consideration. ABLIC Inc. shall not bear any responsibility for patent
infringements related to products using the circuits described herein.
• ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by products
including this IC of patents owned by a third party.

32

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
 Characteristics (Typical Data)
Detection voltage (VUVDET, VOVDET), Release voltage (VUVREL, VOVREL) vs. Temperature (Ta)1. 1

Undervoltage detection

VUVDET, VUVREL [V]

VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V, VDD = 5.0 V
0.86
VUVREL
0.84

0.82
0.80
0.78

VUVDET

0.76
0.74-40 -25

75

100

4.9
4.8

VUVDET

4.7
4.6-40 -25

125

0

25
50
Ta [°C]

75

100

125

VOVDET(S) = 0.9 V, VOVREL(S) = 0.873 V, VDD = 5.0 V
0.96

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V, VDD = 5.0 V
5.8

VOVDET, VOVREL [V]

Overvoltage detection

0.94
0.92

VOVDET

0.90
0.88
0.86

VOVREL

0.84-40 -2502550Ta [°C]

75

100

5.7
VOVDET

5.6
5.5
VOVREL

5.4
5.3
5.2-40 -25

125

0

25
50
Ta [°C]

75

100

125

Detection voltage (VUVDET, VOVDET), Release voltage (VUVREL, VOVREL) vs. Power supply voltage (VDD)
Undervoltage detection

0.83

VUVRELTa = +25°C

Ta = +125°C

0.82
0.81

Ta = -40°C

Ta = -40°C

0.80
0.79
0.78

2. 2

VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V

VUVDET2

Ta = +25°C
3

Ta = +125°C

4
VDD [V]

5

5.15

VUVDET , VUVREL [V]

VUVDET , VUVREL [V]

0.84

5.10

6

VUVDET(S) = 4.9 V, VUVREL(S) = 5.047 V

VUVRELTa = +25°C

Ta = +125°C

5.05
5.00

Ta = -40°C

4.95

Ta = +25°C

4.90
4.85

Ta = -40°C
Ta = +125°C

VUVDET
2

3

4
VDD [V]

5

6

Overvoltage detection

0.92
0.91

VOVDET(S) = 0.9 V, VOVREL(S) = 0.873 V

VOVDET

Ta = +25°C

Ta = +125°C

0.90
0.89

Ta = -40°C

0.88

Ta = +25°C

0.87
0.86

Ta = -40°C
Ta = +125°C

VOVREL
2

3

4
VDD [V]

5

5.60
VOVDET, VOVREL [V]2. 1

VOVDET, VOVREL [V]

2.

25
50
Ta [°C]

5.0

VOVDET, VOVREL [V]

1. 2

0

VUVDET(S) = 4.9 V, VUVREL(S) = 5.047 V, VDD = 5.0 V
5.2
VUVREL
5.1

VUVDET, VUVREL [V]

1.

6

5.50

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V

VOVDET
Ta = +25°C Ta = +125°C
Ta = -40°C

5.50
5.45

Ta = -40°C
Ta = +25°C

5.40

VOVREL

5.35
5.30

2

3

4
VDD [V]Ta = +125°C

5

6

33

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
3.

Hysteresis width (VUVHYS, VOVHYS) vs. Temperature (Ta)3. 1

Undervoltage detection

43
2
1-40 -25

3. 2

0

25
50
Ta [°C]

75

100

4
3
2
1
-40 -25

125

0

75

100

125

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V, VDD = 5.0 V
5VOVHYS [%]VOVHYS [%]4
32
1-40 -2502550Ta [°C]

75

100

4
3
2
1
-40 -25

125

0

25
50
Ta [°C]

75

100

125

Hysteresis width (VUVHYS, VOVHYS) vs. Power supply voltage (VDD)
4. 1

Undervoltage detection
VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V

VUVDET(S) = 4.9 V, VUVREL(S) = 5.047 V

5
Ta = +25°C

Ta = -40°C

4

VUVHYS [%]VUVHYS [%]53
Ta = +125°C

2
1

2

3

4

5

4. 2

Ta = +125°C

2
2

3

4
VDD [V]

5

6

Overvoltage detection
VOVDET(S) = 0.9 V, VOVREL(S) = 0.873 V

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V

55Ta = +25°C

Ta = -40°C

4

VOVHYS [%]VOVHYS [%]Ta = +25°C

3

1

6

Ta = -40°C

4

VDD [V]3
Ta = +125°C

2
1

2

3

4
VDD [V]342550
Ta [°C]

Overvoltage detection
VOVDET(S) = 0.9 V, VOVREL(S) = 0.873 V, VDD = 5.0 V
54.

VUVDET(S) = 4.9 V, VUVREL(S) = 5.047 V, VDD = 5.0 V
5VUVHYS [%]VUVHYS [%]VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V, VDD = 5.0 V
556Ta = -40°C

4

Ta = +25°C

3
Ta = +125°C

2
1

2

3

4
VDD [V]

5

6

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
Current consumption (ISS1) vs. Temperature (Ta)VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VDD = 5.0 V, VSENSE = (VUVREL(S) + VOVREL(S) ) / 2,(during release)
2.5

VUVDET(S) = 4.9 V, VOVDET(S) = 5.5 V,
VDD = 5.0 V, VSENSE = (VUVREL(S) + VOVREL(S) ) / 2,(during release)
2.5

2.0
ISS1 [µA]

ISS1 [µA]

2.0
1.5
1.0
0.5

1.5
1.0
0.5

0.0
-40 -2502550Ta [°C]

75

100

0.0
-40 -25

125

2.5

2.5

2.0

2.0

1.5
1.0

0

25
50
Ta [°C]

75

100

125

VUVDET(S) = 4.9 V, VOVDET(S) = 5.5 V,
VDD = 5.0 V, VSENSE = 3.9 V,(during undervoltage detection)

ISS1 [µA]

ISS1 [µA]

VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VDD = 5.0 V, VSENSE = 0.0 V,(during undervoltage detection)

0.5

1.5
1.0
0.5

0.0
-40 -2502550Ta [°C]

75

100

0.0
-40 -25125

VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VDD = 5.0 V, VSENSE = 1.9 V,(during overvoltage detection)

2.5

2.5

2.0

2.0

1.5
1.0
0.5
0.0
-40 -2502550Ta [°C]

75

100

125

VUVDET(S) = 4.9 V, VOVDET(S) = 5.5 V,
VDD = 5.0 V, VSENSE = 6.0 V,(during overvoltage detection)

ISS1 [µA]

ISS1 [µA]

5.

1.5
1.0
0.5

0

25
50
Ta [°C]

75

100

125

0.0
-40 -2502550Ta [°C]

75

100

125

35

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
6.

Current consumption (ISS1) vs. Power supply voltage (VDD)
VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VSENSE = (VUVREL(S) + VOVREL(S)) / 2,
VDD = 0 V → 6.0 V (during release)

3.0

VUVDET(S) = 4.9 V, VOVDET(S) = 5.5 V,
VSENSE = (VUVREL(S) + VOVREL(S)) / 2,
VDD = 0 V → 6.0 V (during release)

3.0

Ta = +25°C

ISS1 [µA]2.01.0Ta = +25°C
0.0

0

1

2

3
VDD [V]4

5

ISS1 [µA]1.0Ta = -40°C
0.0

6

VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VSENSE = 0.0 V,
VDD = 0 V → 6.0 V (during undervoltage detection)
3.0
Ta = +125°C
Ta = +25°C
2.0

1.0

0

1

0

1

2

3

4

2

5

0

1

2

ISS1 [µA]

ISS1 [µA]36

3
VDD [V]

4

3
VDD [V]

4

5

6

VUVDET(S) = 4.9 V, VOVDET(S) = 5.5 V,
VSENSE = 6.0 V,
VDD = 0 V → 6.0 V (during overvoltage detection)
3.0
Ta = +125°C
Ta = +25°C

2.0
1.0
Ta = -40°C

Ta = -40°C
2

6

1.0
0.0

6

1.0

1

5

Ta = -40°C

VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VSENSE = 1.9 V,
VDD = 0 V → 6.0 V (during overvoltage detection)
3.0
Ta = +125°C
Ta = +25°C
2.0

0

4

2.0

VDD [V]

0.0

3
VDD [V]VUVDET(S) = 4.9 V, VOVDET(S) = 5.5 V,
VSENSE = 3.9 V,
VDD = 0 V → 6.0 V (during undervoltage detection)
3.0
Ta = +125°C
Ta = +25°C

Ta = -40°C
0.0

Ta = +125°C

2.0

Ta = -40°C

ISS1 [µA]

ISS1 [µA]

Ta = +125°C

5

6

0.0

0

1

2

3
VDD [V]

4

5

6

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
Nch transistor output current (IOUT) vs. VDS
Undervoltage detection
VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VSENSE = 0.0 V, Ta = −40°C

IOUT [mA]20
15

VDD = 6.0 V

105

VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VSENSE = 0.0 V, Ta = +25°C

20

VDD = 5.0 V

IOUT [mA]7. 1

VDD = 5.0 V

15
VDD = 6.0 V

105

VDD = 2.5 V

VDD = 2.5 V

0

0
0.0

0.4
0.6
VDS [V]

0.0

0.2

0.4
0.6
VDS [V]0.8

1.0

VDD = 6.0 V

105

VDD = 2.5 V
0.0

0.2

0.4
0.6
VDS [V]

0.8

1.0

Overvoltage detection
VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VSENSE = 6.0 V, Ta = −40°C

20

IOUT [mA]

1.0

VDD = 5.0 V

15

0

7. 2

0.8

15
VDD = 6.0 V

105

VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VSENSE = 6.0 V, Ta = +25°C

20

VDD = 5.0 V

IOUT [mA]

IOUT [mA]

0.2

VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VSENSE = 0.0 V, Ta = +125°C

20

VDD = 5.0 V

15
VDD = 6.0 V

105

VDD = 2.5 V

VDD = 2.5 V

0

0
0.0

0.2

0.4
0.6
VDS [V]

0.8

1.0

0.0

0.2

0.4
0.6
VDS [V]

0.8

1.0

VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VSENSE = 6.0 V, Ta = +125°C

20

IOUT [mA]7.

VDD = 5.0 V

15
VDD = 6.0 V

105

VDD = 2.5 V

0
0.0

0.2

0.4
0.6
VDS [V]

0.8

1.0

Remark VDS: Drain-to-source voltage of the output transistor

37

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00
8.

Nch transistor output current (IOUT) vs. Power supply voltage (VDD)
8. 1

Undervoltage detection
VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VDS = 0.5 V, VSENSE =0.0 V

10.0

VUVDET(S) = 0.8 V, VOVDET(S) = 0.9 V,
VDS = 0.5 V, VSENSE = 6.0 V

Ta = -40°C

IOUT [mA]

8.0

6.0
4.0
2.0

Overvoltage detection

10.0

Ta = -40°C

8.0

IOUT [mA]

8. 2

Ta = +25°C

Ta = +125°C

2

4

6.0
4.0
2.0

0.0

Ta = +25°C

Ta = +125°C

2

4

0.0
0

1

3

5

6

0

1

VDD [V]

3
VDD [V]

5

6

Remark VDS: Drain-to-source voltage of the output transistor

9.

Output voltage (VUV, VOV) vs. SENSE pin voltage (VSENSE)
9. 1

Undervoltage detection

2

Ta = -40°C
Ta = +25°C

1
0

VUVDET(S) = 4.9 V, VUVREL(S) = 5.047 V, VDD = 2.5 V,
pull-up to VDD, pull-up resistance: 100 kΩ
3

VUV [V]VUV [V]VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V, VDD = 2.5 V,
pull-up to VDD, pull-up resistance: 100 kΩ
3

Ta = +125°C

0

1

2

3

4

5

2

Ta = +25°C
1
06

Ta = -40°C

Ta = +125°C

0

1

2

VSENSE [V]
9. 2

6

2

Ta = -40°C
Ta = +25°C

10

Ta = +125°C

0

1

2

3
VSENSE [V]VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V, VDD = 2.5 V,
pull-up to VDD, pull-up resistance: 100 kΩ
3

VOV [V]

VOV [V]

5

Overvoltage detection

VOVDET(S) = 0.9 V, VOVREL(S) = 0.873 V, VDD = 2.5 V,
pull-up to VDD, pull-up resistance: 100 kΩ
3

38

3
4
VSENSE [V]

4

5

6

2

Ta = -40°C
Ta = +25°C

10

Ta = +125°C
0

1

2

3
4
VSENSE [V]56

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
10. Dynamic response vs. Output pin capacitance (COUT) (CD pin = 0.33 nF)

Response time [ms]10

VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V,
VDD = 5.0 V, Ta = −40°C

Response time [ms]Response time [ms]10. 1 Undervoltage detection

1
tPLH

0.1
0.01
0.001
0.00001

10tPHL
0.00010.001
COUT [µF]

0.01

0.1

10

VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V,
VDD = 5.0 V, Ta = +25°C

1
tPLH

0.1
0.01
0.001
0.00001

tPHL
0.00010.001
COUT [µF]

0.01

0.1

VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V,
VDD = 5.0 V, Ta = +125°C

1
tPLH

0.1

tPHL

0.01
0.001
0.00001

0.00010.001
COUT [µF]

0.01

0.1

Response time [ms]10

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V,
VDD = 5.0 V, Ta = −40°C

Response time [ms]Response time [ms]10. 2 Overvoltage detection

1
tPLH

0.1
0.01

tPHL

0.001
0.00001100.00010.001
COUT [µF]

0.01

0.1

10

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V,
VDD = 5.0 V, Ta = +25°C

1
tPLH

0.1
0.01
0.001
0.00001

tPHL
0.00010.001
COUT [µF]

0.01

0.1

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V,
VDD = 5.0 V, Ta = +125°C

1
tPLH

0.1
0.01
0.001
0.00001

tPHL
0.00010.001
COUT [µF]

0.01

0.1

39

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00

VIH1*1

VIH1*1

VIH2*2

VIH2*2VSENSE
VIL1*3VIL2*4

VSENSE
VIL1*3VIL2*4

tPLH

tPHL

VUV

VDD1 × 50%

VDD1 × 50%

*1.
*2.
*3.
*4.

VDD1 × 50%

VDD1 × 50%

VOV

VSS

tPHL

tPLH

VDD1

VDD1

VSS

VIH1 = VUVDET(S) + 0.5 V
VIH2 = VUVREL(S) × 1.03 V
VIL1 = VUVREL(S) − 0.5 V
VIL2 = VUVDET(S) − 0.5 V

*1.
*2.
*3.
*4.

Figure 38 Test Condition of Response Time
(Undervoltage Detection)

Figure 39 Test Condition of Response Time
(Overvoltage Detection)

OV

SENSE

VDD
V

+

VSS

R
100 kΩ

R
100 kΩVDD
VSENSE

VIH1 = VOVDET(S) + 0.5 V
VIH2 = VOVREL(S) + 0.5 V
VIL1 = VOVDET(S) × 0.97 V
VIL2 = VOVREL(S) − 0.5 V

CD

UV
CD
0.33 nF

V

+

V

+

VDD1

Figure 40 Test Circuit of Response Time
Caution 1.

2.

40

The above connection diagram and constants will not guarantee successful operation. Perform
thorough evaluation including the temperature characteristics with an actual application to set theconstants.
When the CD pin is open, a double pulse may appear at release.
To avoid the double pulse, attach 0.33 nF or more capacitor to the CD pin.

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series Reference Data1.

Detection response time (tRESET) vs. Temperature (Ta)1. 1

Undervoltage detection

1. 2

Overvoltage detection

20

20

15

15

10
5
0
-40 -2502550Ta [°C]

75

100

10
5
0
-40 -25

125

0

25
50
Ta [°C]

75

100

125

Detection response time (tRESET) vs. Power supply voltage (VDD)
2. 1

Undervoltage detection

2. 2

Overvoltage detection

VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V,
CD = 3.3 nF

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V,
CD = 3.3 nF

2020

Ta = -40°C
15
10
5
0

Ta = +125°C
2

3

4
VDD [V]Ta = -40°C

Ta = +25°C

tRESET [µs]tRESET [µs]2.

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V,
VDD = 5.0 V, CD = 3.3 nF

tRESET [µs]tRESET [µs]

VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V,
VDD = 5.0 V, CD = 3.3 nF

56

Ta = +25°C

15
10
5
0

Ta = +125°C
2

3

4
VDD [V]5

6

41

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00

1 µs
VIH*1
VSENSER
100 kΩ

VDD

VIL*2

tRESET
VDD

VDD
VUV

V

+

SENSE
VSS

UV
CD
V

VDD × 50%VSENSE

+

CD

VSS
*1.
*2.

VIH = VUVDET(S) + 0.5 V
VIL = VUVDET(S) − 0.5 V

Figure 41

Test Condition of Detection Response Time
(Undervoltage Detection)

Figure 42

Test Circuit of Detection Response Time
(Undervoltage Detection)

1 µs
VIH*1
VSENSE
VIL*2

R
100 kΩVDD

tRESET
VDD

VDD
VOV

V

+

SENSE
VSS

OV
CD
V

VDD × 50%VSENSE

+

CD

VSS
*1.
*2.

VIH = VOVDET(S) + 0.5 V
VIL = VOVDET(S) − 0.5 V

Figure 43

Caution42

Test Condition of Detection Response Time
(Overvoltage Detection)

Figure 44

Test Circuit of Detection Response Time
(Overvoltage Detection)

The above connection diagram and constants will not guarantee successful operation. Perform thoroughevaluation including the temperature characteristics with an actual application to set the constants.

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series
3.

Release delay time (tDELAY) vs. Temperature (Ta)3. 1

Undervoltage detection

3. 2

Overvoltage detection

12

12

11

11

10
9
8
-40 -25

4.

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V,
VDD = 5.0 V, CD = 3.3 nF

tDELAY [ms]tDELAY [ms]VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V,
VDD = 5.0 V, CD = 3.3 nF

0

25
50
Ta [°C]

75

100

10
9
8
-40 -25

125

0

25
50
Ta [°C]

100

125

Release delay time (tDELAY) vs. Power supply voltage (VDD)
4. 1

Undervoltage detection

4. 2

Overvoltage detection

VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V,
CD = 3.3 nF

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V,
CD = 3.3 nF

12
Ta = +25°C

Ta = -40°C

11tDELAY [ms]tDELAY [ms]

12

10
9
8

Ta = +125°C
2

3

4

5

Ta = +25°C

10
9
8

6

Ta = -40°C

11

Ta = +125°C
2

3

4
VDD [V]VDD [V]

5

6

Release delay time (tDELAY) vs. CD pin capacitance (CD) (Without output pin capacitance)
Undervoltage detection

5. 2

VUVDET(S) = 0.8 V, VUVREL(S) = 0.824 V,
VDD = 5.0 V

1000
100

1
0.1

VOVDET(S) = 5.5 V, VOVREL(S) = 5.335 V,
VDD = 5.0 V

Ta = +25°C

100

Ta = -40°C

10Overvoltage detection

1000

Ta = +25°C

tDELAY [ms]5. 1

tDELAY [ms]5.

75Ta = -40°C

10
1
0.1

Ta = +125°C

0.01

Ta = +125°C

0.01
0.1

1

10
CD [nF]

100

0.1

1

10

100

CD [nF]

43

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
S-191BxxxxA Series
Rev.1.2_00

1 µs
VIH*1
VSENSER
100 kΩVDD

VIL*2tDELAY
VDD

VDD
VUV

V

+

SENSE
VSS

UV
CD
V

VDD × 50%VSENSE

+

CD

VSS
*1.
*2.

VIH = VUVREL(S) × 1.03 V
VIL = VUVREL(S) − 0.5 V

Figure 45

Test Condition of Release Delay Time
(Undervoltage Detection)

Figure 46

Test Circuit of Release Delay Time
(Undervoltage Detection)

1 µs
VIH*1
VSENSE
VIL*2

R
100 kΩVDD

tDELAY
VDD

VDD
VOV

V

+

SENSE
VSS

OV
CD
V

VDD × 50%VSENSE

+

CD

VSS
*1.
*2.

VIH = VOVREL(S) + 0.5 V
VIL = VOVREL(S) × 0.97 V

Figure 47

Caution44

Test Condition of Release Delay Time
(Overvoltage Detection)

Figure 48

Test Circuit of Release Delay Time
(Overvoltage Detection)

1. The above connection diagram and constants will not guarantee successful operation. Perform
thorough evaluation including the temperature characteristics with an actual application to set theconstants.
2. When the CD pin is open, a double pulse may appear at release.
To avoid the double pulse, attach 0.33 nF or more capacitor to the CD pin.

AUTOMOTIVE, 125°C OPERATION, 6 V, WINDOW VOLTAGE DETECTOR WITH FAST DETECTION RESPONSE
Rev.1.2_00
S-191BxxxxA Series Power Dissipation
HSNT-8(1616)B

SOT-23-6
Tj = +150°C max.

4
3
2
B

1

Tj = +150°C max.

5
Power dissipation (PD) [W]Power dissipation (PD) [W]

5

4
E

3

C
2 D
1 B

A
0

0

A
25

50

75

100

125

150

175

0

0

25

Ambient temperature (Ta) [°C]
Board
A
B
C
D
E

Power Dissipation (PD)
0.79 W
1.01 W
−
−
−

50

75

100

125

150

175

Ambient temperature (Ta) [°C]
Board
A
B
C
D
E

Power Dissipation (PD)
0.58 W
0.73 W
2.40 W
2.27 W
2.91 W

45

SOT-23-3/3S/5/6 Test Board
IC Mount Area

(1) Board A
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]

1
2
3
4

Thermal via

Specification
114.3 x 76.2 x t1.6
FR-4
2Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.070-(2) Board B
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]Thermal via

1
2
3
4

Specification
114.3 x 76.2 x t1.6
FR-4
4Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070-

No. SOT23x-A-Board-SD-2.0

ABLIC Inc.

HSNT-8(1616)B Test Board
IC Mount Are(1) Board A
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]

1
2
3
4

Thermal via

Specification
114.3 x 76.2 x t1.6
FR-4
2Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.070-(2) Board B
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]

1
2
3
4

Thermal via

Specification
114.3 x 76.2 x t1.6
FR-4
4Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070-(3) Board C
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]Thermal via

1
2
3
4

Specification
114.3 x 76.2 x t1.6
FR-4
4Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070
Number: 4
Diameter: 0.3 mm

No. HSNT8-C-Board-SD-1.0

ABLIC Inc.

HSNT-8(1616)B Test Board
IC Mount Are(4) Board D
Item
Size [mm]Material
Number of copper foil layer

Specification
114.3 x 76.2 x t1.6
FR-4
4

Thermal via

2
Pattern for heat radiation: 2000mm t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070-

Item
Size [mm]Material
Number of copper foil layer

Specification
114.3 x 76.2 x t1.6
FR-4
4

Copper foil layer [mm]

1
2
3
4

enlarged view

(5) Board E

Copper foil layer [mm]Thermal via

1
2
3
4

2
Pattern for heat radiation: 2000mm t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070

Number: 4
Diameter: 0.3 mm

enlarged viewNo. HSNT8-C-Board-SD-1.0

ABLIC Inc.

2.9±0.2
1.9±0.2
6

0.95

5

1

4

2

+0.1

3

0.15 -0.05

0.95

0.35±0.15

No. MP006-A-P-SD-2.1

TITLE

SOT236-A-PKG Dimensions

No.

MP006-A-P-SD-2.1

ANGLE
UNIT

mm

ABLIC Inc.

4.0±0.1(10 pitches:40.0±0.2)+0.1

ø1.5 -0+0.2

ø1.0 -0

2.0±0.05

0.25±0.1

4.0±0.1
1.4±0.2

3.2±0.2

3 2 1

4 5 6

Feed direction

No. MP006-A-C-SD-3.1

TITLE

SOT236-A-Carrier Tape

No.

MP006-A-C-SD-3.1

ANGLE
UNIT

mm

ABLIC Inc.

+1.0

9.0 - 0.0
11.4±1.0

Enlarged drawing in the central part

ø13±0.2

(60°)

(60°)

No. MP006-A-R-SD-3.0

TITLE

SOT236-A-Reel

No.

MP006-A-R-SD-3.0

ANGLE

QTY

UNIT

mm

ABLIC Inc.

3,000

0.39±0.02

1.60±0.1(0.65)
0.10±0.04

0.40(0.15)(0.05)

1.50

1.60±0.1(1.40)The heat sink of back side has different electric
potential depending on the product.
Confirm specifications of each product.
Do not use it as the function of electrode.
0.20±0.05

No. PY008-B-P-SD-1.0

TITLE

HSNT-8-C-PKG Dimensions

No.

PY008-B-P-SD-1.0

ANGLE
UNIT

mm

ABLIC Inc.

1.75±0.1

0.35

0.20±0.05

4.0±0.1

1.80

+0.3

3.5±0.05

4.0±0.1

8.0 -0.1

2.0±0.05+0.1

1.5 -0

0.55

1.80

4

1

5

8

Feed direction

No. PY008-B-C-SD-1.0

TITLE

HSNT-8-C-Carrier Tape
PY008-B-C-SD-1.0

No.
ANGLE
UNIT

mm

ABLIC Inc.

+0

180 -3+1.0

60 -0.0+1.0

9.0 - 0.0
11.4±1.0

Enlarged drawing in the central part±0.813±0.2
2±
0.5

21

(60°)

(60°)

No. PY008-B-R-SD-1.0

TITLE

HSNT-8-C-ReelNo.

PY008-B-R-SD-1.0

ANGLE

QTY.

UNIT

mm

ABLIC Inc.

5,000

Land Pattern

0.45

1.30

2.10

0.65

0.40

0.25
Cauion It is recommended to solder the heat sink to a board
in order to ensure the heat radiation.
PKG

2.10

0.40

0.30

Metal Mask Pattern

0.45

0.65

0.25
CautionMask aperture ratio of the lead mounting part is 100%.
Mask aperture ratio of the heat sink mounting part is 20%.
Mask thickness: t0.10 mm
100%
20%t0.10 mm

TITLE

HSNT-8-C-Land Recommendation

No.

PY008-B-L-SD-1.0

ANGLE
UNIT

mm

No. PY008-B-L-SD-1.0

ABLIC Inc.

Disclaimers (Handling Precautions)1.

All the information described herein (product data, specifications, figures, tables, programs, algorithms andapplication circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.

2.

The circuit examples and the usages described herein are for reference only, and do not guarantee the success ofany specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any otherright due to the use of the information described herein.

3.

ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information describedherein.

4.

Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due tothe use of the products outside their specified ranges.

5.

Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.

6.

When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-relatedlaws, and follow the required procedures.

7.

The products are strictly prohibited from using, providing or exporting for the purposes of the development of
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caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,biological or chemical weapons or missiles, or use any other military purposes.

8.

The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.

9.

In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products areallowed to apply for the system on customer's own responsibility.

10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of thisdocument described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
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14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
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15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07

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