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Ka band MMIC
SPDT Scottky Diode

Ka-SPDT-1829 Previously named LE-Ka1401507
GaAs Diode, SPDT 18-29 GHzFeatures

Overview
Ka-SPDT-1829 is a SPDT Schottky diode based switch that covers frequencies from
18GHz to 29GHz with very low loss (2dB) when closed and isolation greater than
10dB when open.

•

18 - 29 GHz.

•

2 dB insertion loss.

•10 dB isolation.

•10 dB return loss (closed).

All bond pads and the die backside are gold plated. This MMIC MMIC is compatible
with conventional die attach methods, as well as thermo-compression and thermosonic
wire bonding, making it ideal for MCM and hybrid microcircuit applications. All dataApplications

shown herein is provisional and is measured with the chip in a 50 ohm environmentand contacted with RF probes.

•

Millimetre-wave imaging.

•

Automotive radar.

•High resolution radar.

•Sensing.

•

P2P communications;•Short haul / high capacity / lowinterference links.

•Ka band Datasheet

Ka-SPDT-1829

Issue date: 30 April 21Medical.

DOC REV 3

Page 1 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode, SPDT 18-29GHz

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product datasheet

Specification Overview

Parameter

Min.

Frequency

18		Insertion LossIsolation

10

Return Loss (Open)
Return Loss (Closed)

Typ.		 Max.
29

Units

Notes

GHz2		 dB

Biased at -2V, 0mA closed
Biased at +2V, 10mA open

15		Biased at -2V, 0mA closedBiased at +2V, 10mA open

dB3		 dB
810		 dB

Closed Voltage-2		 VOpen Voltage+2		 V

Closed Current

0		 mAOpen Current

10		 mA

Absolute Maximum Ratings

Parameter				Rating
Control Voltage			-3V to +3V

RF Power			

20dBm

Storage Temperature			−65°C to +150°C

Channel Temperature			+175°COperating Temperature			−40°C to +85°C

Notes
The tests indicated have all been
performed with 100pF de-coupling
capacitors on all Vc pads.
All tests are carried out at 25°C.

ESD (electrostatic discharge)
sensitive device. Charged devices
and circuit boards can dischargewithout detection. Although thisproduct features proprietary
protection circuitry, damage may
occur on devices subjected to ESD.
Proper ESD precautions should
be taken to avoid performancedegradation or loss of functionality.

Ka band Datasheet

Ka-SPDT-1829

Issue date: 30 April 21

DOC REV 3

Page 2 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode, SPDT 18-29GHz

www.arralis.com

product datasheet

Measured Performance Data

0.00

Figure 1
Insertion Loss

-1.00
-2.00

Insertion Loss (dB)

-3.00
-4.00
-5.00

OUT1, -2V, 0mA (Closed)-6.00

OUT2, -2V, 0mA (Closed)

-7.00
-8.00
-9.00
-10.00
15.00

17.00

19.00

21.00

23.00

25.00

27.00

29.00

31.00

33.00

35.00

RF Frequency (GHz)0.00

Figure 2
Isolation-5.00

Isolation (dB)

-10.00-15.00-20.00-25.00OUT1, 2V, 9.27mA (Open)-30.00OUT2, 2V, 9.26mA (Open)-35.00-40.00
15.00

17.00

19.00

21.00

23.00

25.00

27.00

29.00

31.00

33.00

35.00

RF Frequency (GHz)Ka band Datasheet

Ka-SPDT-1829

Issue date: 30 April 21

DOC REV 3

Page 3 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode, SPDT 18-29GHz

www.arralis.com

product datasheet

Measured Performance Data

0.00

Figure 3
Closed Return Loss

-2.00
-4.00

Return Loss (dB)

-6.00
-8.00
RFIN (one branch closed)-10.00OUT1, -2V, 0mA (Closed)
OUT2, -2V, 0mA (Closed)-12.00-14.00-16.00-18.00
15.00

17.00

19.00

21.00

23.00

25.00

27.00

29.00

31.00

33.00

35.00

RF Frequency (GHz)0.00

Figure 4
Isolated Port ‘Open’
Return Loss

-1.00
-2.00

Return Loss (dB)

-3.00
-4.00-5.00
OUT1, -2V, 0mA (Closed)-6.00

OUT2, -2V, 0mA (Closed)
-7.00
-8.00
-9.00
-10.00
15.00

17.00

19.00

21.00

23.00

25.00

27.00

29.00

31.00

33.00

35.00

RF Frequency (GHz)Ka band Datasheet

Ka-SPDT-1829

Issue date: 30 April 21

DOC REV 3

Page 4 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode, SPDT 18-29GHz

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product datasheet

Outline Drawing

861058282664

545436

105

30

295

82

86

86

8330

105
118
60

1700

54
82
82
47

54
86
54
2200

928

Notes
1.

All dimensions are in um.

2.

RF bond pads are 86 x 105um.

3.

All DC bond pads are 86 x 83um.

4.

Gold backside metalisation.

5.

Backside metal is ground.

6.

Die thickness is 100um.

Die Packing Information
All die are delivered using gel-paks unless otherwise requested.

Ka band Datasheet

Ka-SPDT-1829

Issue date: 30 April 21

DOC REV 3

Page 5 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode, SPDT 18-29 GHz

www.arralis.com

product datasheet

Pad Descriptions

Name

Description

RFIN

Common RF input pad. This pad is AC coupled.

OUTX

RF output pad for branch X. This pad is AC coupled.

VDX		

This is DC control voltage pad for branch X.

BOTTOM

The die backside must be connected to RF/DC ground.

General Notes on Assembly

Ka band Datasheet

Ka-SPDT-1829

Issue date: 30 April 21

DOC REV 3Page 6 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

GaAs Diode, SPDT 18-29 GHz

www.arralis.com

product datasheet

General Notes on Assembly

Die should be mounted on conductive material such as gold-plated metal to provide agood ground and suitable heat sink, if necessary.
1.

Attaching the die using Au/Sn preforms is preferable. The Eutectic melt for Au/
Sn occurs at approximately 280oC so the die (plus mount and preform) is initiallyheated up to 180oC and then it is heated for approximately 10 seconds to 280oC
using a nitrogen heat gun. The device will survive 10 seconds at this temperature.
The static breakdown for GaAs devices is approximately 330oC.

2.

Pure, dry nitrogen should be used as the heat source.

3.

If the devices cannot be lifted/ placed by a vacuum device, then ESD die-lifting
tweezers are preferable.

4.

Aluminium wire must not be used.

Disclaimer
The information contained herein is believed to be reliable; however, Arralis makes no warranties
regarding the information and assumes no responsibility or liability whatsoever for the use of theinformation contained herein. All information is subject to change without notice, therefore customers
should obtain the latest relevant information before placing orders for Arralis products. The information
contained herein does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any
other intellectual property rights.
This information does not constitute a warranty with respect to the product described, and Arralis
disclaims any and all warranties either expressed or implied, relating to sale and/or use of Arralis products
including liability or warranties relating to fitness for a particular purpose, consequential or incidental
damages, merchantability, or infringement of any patent, copyright or other intellectual property right.
Without limiting the generality of the foregoing, Arralis products are not warranted or authorised for use
as critical components in medical, life-saving, or life-sustaining applications, or other applications wherea failure would reasonably be expected to cause severe personal injury or death.
Copyright 2021 © Arralis

Ka band Datasheet

Ka-SPDT-1829

Issue date: 30 April 21

DOC REV 3

Page 7 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.

©2021 Arralis Ltd. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.

Arralis USA OfficeArralis European Offices+(1) 386 301 3249 (USA)t: +(44) 1793 239670 (UK)e: sales@arralis.com

Ka band Datasheetarralis.com
Ka-SPDT-1829

e: emilie.wren@arralis.com

Issue date: 30 April 21

DOC REV 3

Page 8 of 8

No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use,
nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice.