1༙ᑟయ㟁Ꮚ䝕䝞䜲䝇◊✲40ᖺᕤᏛ◊✲⛉㔞ᏊᕤᏛᑓᨷỈ㇂ Ꮥ䠎Ỉ㇂◊✲ᐊ䛻㛵䜟䛳䛯ே䛯䛱ᩗ⛠␎

1995~2013䝇䝍䝑䝣䝫䝇䝗䜽஦ົ⿵బဨᓊᮏ ⱱ๓⃝ᏹ୍኱㔝㞝㧗኱ᆏḟ㑻ᔱ⏣⾜ᚿ㯮ෆṇோ▼஭ ⪽Tengfeng Xie
PrakashSomaniChengGuanLimMarkHughesᏞ ᮾ᫂㕥ᮌ㍤⨾☾㍯♸Ꮚከ䛟䛾Ꮫ⏕䛾䜏䛺䛥䜣ᴫせ/◊✲䛾Ṍ䜏
1973~1995 ᪥ᮏ㟁ಙ㟁ヰබ♫/NTTIIIͲV᪘໬ྜ≀༙ᑟయ䝕䝞䜲䝇㔞Ꮚ䝕䝞䜲䝇
1984 ᕤᏛ༤ኈ(GaAs MESFET䛾㞟✚໬䛚䜘䜃
GaAs㞟✚ᅇ㊰⏝άᛶᒙ䛾◊✲)
1995~2013 ྡྂᒇ኱ᏛᕤᏛ◊✲⛉㔞ᏊᕤᏛᑓᨷ㔞Ꮚ䝕䝞䜲䝇䝦䝔䝻᥋ྜ䝕䝞䜲䝇䝘䝜䝏䝳䞊䝤䝕䝞䜲䝇䝕䝞䜲䝇ホ౯ᢏ⾡䝯䝑䝉䞊䝆䠏䠐◊✲䛾䝇䝍䞊䝖ಟኈㄢ⛬㸦୕ᮌ୐㑻ඛ⏕ࠊᱵ㔝ṇ⩏ඛ⏕㸦⌧୰㒊኱Ꮫ㸧㸧㟼☢Ἴࡢ༙ᑟయ୰࢟ࣕࣜ࢔ࢆ⏝࠸ࡓቑᖜ࡟㛵ࡍࡿ◊✲ĻInSb୰࡟࠾ࡅࡿ㟁ὶ୙Ᏻᐃᛶࡢ◊✲༙ᑟయࣉࣛࢬ࣐୰࡛ࡢ㟁ὶ᣺ື㸸ᅛయⓎ᣺ჾ࡟Ⓨᒎࡢྍ⬟ᛶಟኈㄽᩥⓎ⾲఍すỌ㡴 ඛ⏕㸦ᙜ᫬ࠊྡྂᒇ኱Ꮫຓᩍᤵࠊඖ㇏ᶫᢏ⾡⛉Ꮫ኱ᏛᏛ㛗㸧Q: ௚ࡢ◊✲ᶵ㛵࡛ࡸࡽࢀ࡚࠸ࡿࡇ࡜࡜ఱࡀ㐪࠺㸽Originality
Somethingnew༙ᑟయ㒊ရ◊✲ᐊ(NTT)䠑(1973~1981)ᐊ㛗䠖బ⸨Ᏻኵ
GaAs⤖ᬗᡂ㛗䞉䜲䜸䞁ὀධ䚸䝭䝸Ἴ䝕䝞䜲䝇䚸GaAsᶵ⬟䝕䝞䜲䝇䚸䜲䞁䝟䝑䝖䝎䜲䜸䞊䝗◊✲䝔䞊䝬䠖䜺䞁ຠᯝᶵ⬟⣲Ꮚ䛾◊✲䠄䝟䝹䝇䛾㆑ู䞉෌⏕䞉ቑᖜ䠅ཧ⪃⨨࠿ࢀࡓሙᡤ࡛ဏࡁ࡞ࡉ࠸ࠋ
Ώ㎶࿴Ꮚࣀ࣮ࢺࣝࢲ࣒ΎᚰᏛᅬ⌮஦㛗ᗁ෤⯋⨨࠿ࢀࡓሙᡤ࡛ဏࡁ࡞ࡉ࠸ධᏛ䚸ධ♫䚸⤖፧䚸Ꮚ⫱䛶䚸ே⏕䛾ྛẁ㝵䛷䛣䜣䛺䛿䛪䛷䛿䛺䛛䛳䛯䛸ᛮ䛖䛣䛸䛿䛯䛟䛥䜣䛒䜛䚹ဏ䛟䛸䛔䛖䛣䛸䛿⮬ศ䛜ᖾ䛫䛻䛺䜚䚸௚ே䜢ᖾ䛫䛻䛩䜛䛸䛔䛖䛣䛸䚹ဏ䛟䛸䛔䛖䛣䛸䛿኱ኚ䛺䛣䛸䛛䜒䛧䜜䛺䛔䚹䛧䛚䜜䛶䛔䛯᪉䛜ᴦ䛛䜒䛧䜜䛺䛔䚹䛹䛖䛧䛶䜒ဏ䛡䛺䛔䛸䛝䛿ᆅ୰῝䛟᰿䜢ᙇ䜚䛺䛥䛔䚹䛔䛴䛛ဏ䛟᫬䛻ഛ䛘䛶䚹ᗁ෤⯋Ώ㎶࿴Ꮚࣀ࣮ࢺࣝࢲ࣒ΎᚰᏛᅬ
⌮஦㛗

䠒

䠓

GaAs䜈䛾䜲䜸䞁ὀධ䛷ᙧᡂ䛧䛯άᛶᒙ䛾䝕䝞䜲䝇ᛂ⏝Ͳ1䜲䜸䞁ὀධ䜺䞁ຠᯝ⣲Ꮚ䠖 Electron.Lett.1975 䠄ୡ⏺䛷䠏␒┠䠅ᣦᑟ⪅䛿஺᥮◊✲ဨ䛸䛧䛶䝗䜲䝒㛗ᮇ⁫ᅾ䛷୙ᅾ⤖ᬗᡂ㛗䛾ᑓ㛛ᐙ䛿ᝒほⓗA

K
100Pmྂᕝ㟼஧㑻ඛ⏕䠄ᮾᕤ኱䠅䛛䜙ὀ┠◊✲䛸䛧䛶⤂௓䛥䜜䛯䚹䜶䝢䝍䜻䝅䝱䝹⤖ᬗ䜲䜸䞁ὀධᒙ䝡䜼䝘䞊䝈䝷䝑䜽ཧ⪃䠖᪂᪥ᮏ↓⥺䚸䜺䞁Ⓨ᣺ჾⓎ᣺Ἴᙧඛ⾜◊✲㸦◊✲㛤ጞᙜ᫬ࡣᏑᅾࢆ▱ࡽ࡞࠿ࡗࡓ㸧
R. G. Hunsperger, GaAs FETs with ion-implanted channel,
Electron. Lett. 1973
Hughes Research Laboratories
B. M. Welch, GaAs FETs by ion implantation,
J. Appl. Phys. 1974
Rockwell International

GaAs䜈䛾䜲䜸䞁ὀධ䛷䛻ᙧᡂ䛧䛯άᛶᒙ䛾䝕䝞䜲䝇ᛂ⏝Ͳ2㑅ᢥ䜲䜸䞁ὀධGaAs MESFET䠖 Electron.Lett.1976
DGS

2ᖺ䛛䛛䛳䛶䠄䝸䞊䜽㟁ὶ䛾ၥ㢟䠅䠄௚䛾䝔䞊䝬䛻ኚ䜟䜛┤๓䠅㑅ᢥ䜲䜸䞁ὀධGunnͲGaAs MESFETIC 䠖 Electron.Lett.1978
ධຊFET

V:100mV/divฟຊ䠄㆑ู䞉෌⏕䞉ቑᖜ䠅

ධຊGunnH:1ns/div

V:400mV/div༙⤯⦕ᛶGaAsᇶᯈ⤖ᬗ䛾ရ㉁䛾㔜せᛶ䚸䛧䛝䛔್⣲Ꮚ䛾㞴䛧䛥䠔

GaAs ᑠつᶍ㞟✚ᅇ㊰䛾◊✲1978䡚
ᢏ⾡㑅ᢥ䠖䝜䞊䝬䝸䜸䝣ᆺ᳨ウ㡯┠䜶䝢⤖ᬗ䠖άᛶᒙ䛾ⷧᒙ໬䠄~0.1Pm,㝧ᴟ㓟໬䠅㟁Ꮚ䝡䞊䝮ᥥ⏬ᢏ⾡㈇Ⲵ᢬ᢠ್䛾᭱㐺໬Al㓄⥺䛾⾲㠃㓟໬䛻䜘䜛᥋⥆୙Ⰻ
Al㓄⥺䛾⌧ീᾮ䛻䜘䜛䜶䝑䝏䞁䜾᩿⥺
䝸䞁䜾Ⓨ᣺ჾ,77ps/gate,Jpn .J.Appl.Phys.1979

15ẁ䝸䞁䜾Ⓨ᣺ჾ◊✲䝔䞊䝬⤊஢┤๓䠄ⷧ䛔άᛶᒙ䛾ᙧᡂ䛾ᅔ㞴䛥䠅 䠖ᅔ㞴䛿ே䜢⫱䛶䜛䠛
䝸䞁䜾Ⓨ᣺ჾ䠖30ps/gate,Electron.Lett.1980,
࿘Ἴᩘศ࿘ჾ䠖 3GHzⓎ᣺Ἴᙧ

㧗࿘Ἴ

ᐃ䝆䜾

1/2ศ࿘ືస◊✲ᐊ䛸䛧䛶኱䝥䝻䝆䜵䜽䝖䛾䝇䝍䞊䝖䠖1Kb䛾䝇䝍䝔䜱䝑䜽䝯䝰䝸䠕

GaAs㞟✚ᅇ㊰⏝άᛶᒙ䛾◊✲䠉䠍
1980䡚䝞䝷䛴䛝䛾ᑡ䛺䛔⣲Ꮚ䛾Ⅽ䛾⤖ᬗ䛾᮲௳⣲Ꮚ≉ᛶ䛾ᆒ୍໬䠖 ከᩘ䛾⣲Ꮚ䛾㟁Ẽ≉ᛶ䛾10ᐃ䛯䛰䜂䛯䛩䜙 ᐃ䛩䜛䛰䛡䠛㔜せᛶ䛜䜟䛛䜙䛪䛒䜎䜚䜔䜚䛯䛟䛺䛛䛳䛯䠖LCR䝯䞊䝍⮬ື ᐃ⿦⨨䛾❧䛱ୖ䛢(䜻䝱䝸䜰⃰ᗘ䠅⮬ື䝥䝻䞊䝞䠄 ᐃ⣲Ꮚ䠅䝟䝋䝁䞁㟁ὶ͸㟁ᅽ䝯䞊䝍䝥䝻䝑䝍䜻䝱䝸䜰⃰ᗘศᕸ䛾䜀䜙䛴䛝Si䜲䜸䞁ὀධỈᖹ䝤䝸䝑䝆䝬䞁⤖ᬗ୙ᆒ୍䠖ᡂ㛗㠃䛸ษ䜚ฟ䛧㠃䛾୙୍⮴䚸೫ᯒ⣔ᩘ
SolidStateElectron.,1982

11GaAs㞟✚ᅇ㊰⏝άᛶᒙ䛾◊✲䠉䠎ᆒ୍ᛶホ౯⏝FET䝟䝍䞁ิ䠅䝗䝺䜲䞁㟁ὶศᕸ

14x18mm26300FETs(200Pm㛫㝸)䝗䝺䜲䞁㟁ὶ䛻ྠᚰ෇≧⦤ᶍᵝLEC⤖ᬗᡂ㛗᫬䠄䝏䝵䝁䝷䝹䝇䜻䞊ἲ䠅䛾⁐ᾮ䛾⇕ᑐὶ䛸㛵㐃䛧䛯⇕ᦂ䜙䛞䜢཯ᫎྡす䜔䛩䛧䛥䜣䠄⌧❧࿨㤋኱Ꮫᩍᤵ䠅
GaAs 㛵㐃ᅜ㝿఍㆟䠄1981)

12㧗ᛶ⬟GaAs㟁⏺ຠᯝ䝖䝷䞁䝆䝇䝍 1981~䝎䝭䞊䝀䞊䝖䜢౑䛳䛯䝀䞊䝖཯㌿䝥䝻䝉䝇䛾ᥦ᱌ప᢬ᢠn+㡿ᇦ䛾⮬ᕫᩚྜᙧᡂ䠖ᐤ⏕᢬ᢠ䛾పῶ䛻䜘䜛㧗ᛶ⬟໬䚸⣲Ꮚ≉ᛶ䛾䜀䜙䛴䛝పῶSAINT (SelfͲAlignedImplantationforN+ͲlayerTechnology)ᶓᒣ┤ᶞ䛥䜣䠄ᙜ᫬ᐩኈ㏻䚸⌧AIST䠅䛾⪏⇕䝀䞊䝖⮬ᕫᩚྜ䝥䝻䝉䝇䛾≉チ䜢㏨䜜䜛ᚲせ䝎䝭䞊䝀䞊䝖䝥䝻䝉䝇ᒣᓮ⋤⩏䛥䜣
1982Electron.Lett.

ᚑ᮶䝥䝻䝉䝇▷䝀䞊䝖໬䛻䜘䜛㧗ᛶ⬟໬䛜ᐜ᫆
(10Gb/s䜎䛷ᐇ⌧)ᴮᮌᏕ▱䛥䜣ᚋ᪥ㄯ䠖᪥ᮏ↓⥺䛻ᢏ⾡⛣㌿䠖㇂ཱྀ䛥䜣13䠎ᖺ㛫䛿◊✲ᐊ㛗⿵బ䛾䛯䜑◊✲䛿䛚ఇ䜏
(1982:Ṋⶶ㔝䛛䜙ཌᮌ◊✲ᡤ䜈䛾⛣㌿ᴗົ)(1983: ༤ኈㄽᩥ䛾ᇳ➹)༤ኈㄽᩥ14䠄ᇳ➹1983䠅䠄බ⫈఍䠖1984䠅

GaAs MESFET䛾㞟✚໬䛚䜘䜃GaAs㞟✚ᅇ㊰⏝άᛶᒙ䛾◊✲୺ᰝ䠖 㞵ᐑዲᩥඛ⏕๪ᰝ䠖 ㉥㷂 ຬඛ⏕䚸ᕝཪ ᫭ඛ⏕䜰䝗䝞䜲䝄䞊䠖 ᱵ㔝ṇ⩏ඛ⏕䝦䝔䝻᥋ྜ㟁⏺ຠᯝ䝖䝷䞁䝆䝇䝍䛾◊✲䠉䠍

151984䡚1988

䜲䞁䝞䞊䝍䞊≉ᛶ

AlGaAs/GaAs MISHFET䜢⏝䛔䛯䝁䞁䝥䝸䝯䞁䝍䝸ᅇ㊰GaAs HEMT䛻㢮ఝ䛾ᵓ㐀
AlGaAs䛿䜰䞁䝗䞊䝥:䛧䛝䛔್㟁ᅽ䛾ไᚚᛶ䛜Ⰻ䛔䚹GeͲgateMISFET:Ⲩ஭㑥༤䛥䜣
GaAs㛵㐃ᅜ㝿఍㆟ (1985䚸Karuizawa)я ᯇᮏ࿴ᙪ䛥䜣䠄ᙜ᫬ ⏘⥲◊䚸⌧኱㜰኱Ꮫ䠅Ⓨ᣺Ἴᙧ㝧 ᏶἞䛥䜣䠄ᙜ᫬ StanfordUniv.⌧໭ᾏ㐨኱Ꮫ䠅䝦䝔䝻᥋ྜ㟁⏺ຠᯝ䝖䝷䞁䝆䝇䝍䛾◊✲䠉䠎
InAlAs/InGaAs HFET䛾◊✲
JesusA.delAlamo䠄⌧MIT)⤖ᬗᡂ㛗ᢏ⾡䚸䝕䝞䜲䝇స〇ᢏ⾡䚸䝕䝞䜲䝇ホ౯ᢏ⾡
IEEETrans.ED.1989:᥋ゐ᢬ᢠ䛾 ᐃἲIEEEEDL,1989,dopedchannelIEEEEDL,㧗࿘Ἴ≉ᛶ(fT,fmax)䛾䝞䜲䜰䝇౫ᏑᛶIEEETrans.ED.1989:䝸䝉䝇䝀䞊䝖MISFETḢ⡿䛾䝗䜽䝍䞊
䝢䞊䜽䛜㧗䛔䛾䜏䛷䛺䛟ᇶ♏䛜䛧䛳䛛䜚䛧䛶䛔䜛䚹

16

17

㔞Ꮚ䝕䝞䜲䝇/᪂ᶵ⬟䝕䝞䜲䝇䛾◊✲1989~1993ୖྖ䠖ఱ䜢䜔䛳䛶䜒Ⰻ䛔䚹ඹ㬆䝖䞁䝛䝹䝕䝞䜲䝇㏿ᗘኚㄪ䝕䝞䜲䝇㟁ᏊἼᖸ΅䝕䝞䜲䝇༢㟁Ꮚ䝕䝞䜲䝇ඹ㬆䝖䞁䝛䝹⣲Ꮚ䜢⏝䛔䛯༢Ᏻᐃ䠉཮Ᏻᐃ㌿⛣⣲ᏊMonostableͲBistable TransitionLogicElement:MOBILE๓⃝ᏹ୍䛥䜣䠄⌧ᐩᒣ኱䠅

E䝀䞊䝖༢Ᏻᐃ䝀䞊䝖௜ඹ㬆䝖䞁䝛䝹⣲Ꮚ䝀䞊䝖㟁ᅽ኱཮Ᏻᐃ㟁ὶ͸㟁ᅽ≉ᛶJpn.J.Appl.Phys.1993㈇ᛶ᢬ᢠ⣲Ꮚ䛾┤ิ᥋⥆᣺ື㟁※䛷㥑ືእ㒊ಙྕ䛷ᏳᐃⅬ䜢㑅ᢥC㥑ື㟁ᅽ18༢Ᏻᐃ䠉཮Ᏻᐃ㌿⛣⣲Ꮚ ᶵ⬟ᛶᐇドIEEEEDL,1993
IEEETrans.ED,1995

᫂ྜྷᬛᖾ䛥䜣/๓⃝ᏹ୍䛥䜣

VG1
VG2
VG3㔜䜏௜䛝ㄽ⌮ືసᶵ⬟ྍኚㄽ⌮ືస(3MOBILES)

19

20ྡྂᒇ኱Ꮫ㔞ᏊᕤᏛᑓᨷ㔞Ꮚ䝕䝘䝜䝞䜲䝇/䝦䝔䝻᥋ྜ䝕䝞䜲䝇䛾◊✲(1995~)Ỉ㇂ Ꮥ䚸ᓊᮏ ⱱ䚸M1(Ⲩᕝᨻྖ䚸኱㔝㞝㧗䚸㔝ᓮ㡰୍)ึ䜑䛶䛾༞ᴗ⏕䠄M2:䠐ே䚸B4:䠒ே䠅21◊✲䝔䞊䝬㑅ᢥⲨᕝᨻྖ䠖 䜿䝹䝡䞁䝥䝻䞊䝤䝣䜷䞊䝇㢧ᚤ㙾䜢⏝䛔䛯䝕䝞䜲䝇⾲㠃䛾㟁఩ศᕸ ᐃᢏ⾡䠄ືస≧ែ䛾䝕䝞䜲䝇ホ౯䠖㟁Ẽ䠅኱㔝㞝㧗䠖 㢧ᚤศගᢏ⾡䜢⏝䛔䛯䝕䝞䜲䝇ホ౯ᢏ⾡䠄ືస≧ែ䛾䝕䝞䜲䝇ホ౯䠖ග䠅㔝ᓮ㡰୍:IIIͲV᪘໬ྜ≀༙ᑟయ䝕䝞䜲䝇䛾స〇ᢏ⾡╔௵䛧䛶䠑ᖺ┠䛛䜙༞ㄽ䛾ඹ㏻䝔䞊䝬䛸䛧䛶䛂䝸䞁䜾Ⓨ᣺ჾ䛾స〇䞉ホ౯䛃䜢ྲྀ䜚ୖ䛢䜛䛣䛸䛜䛷䛝䜛䜘䛖䛻䛺䛳䛯䚹⃝ᮌ◊䛾䜽䝸䞊䞁䝹䞊䝮䜢೉⏝䚹22㟼㟁Ẽຊ㢧ᚤ㙾(KFM)䛻䜘䜛
⾲㠃㟁఩ศᕸ ᐃͲ1
1995~㟁⏺㞟୰พฝീ㟁఩ീJpn.J.Apl.Phys.1997
IEEEEDL,1997Ⲩᕝ㟼㟁Ẽຊ ᐃ㢧ᚤ㙾(KFM)䛻䜘䜛
⾲㠃㟁఩ศᕸ ᐃͲ2 ⷧἼ✵㛫ศゎ⬟䠖 ~20nm

23pn᥋ྜ䛷䛿ග↷ᑕୗ䛷䛺䛔䛸᳨ฟ䛷䛝䛺䛔༙ᑟయ⾲㠃䛾䝣䜵䝹䝭䝺䝧䝹䝢䞁䝙䞁䜾䛾䛯䜑Jpn.J.Appl.Phys.1998
Jpn.J.Apppl.Phys.1999

KFM:GaN㈏㏻㌿఩Ḟ㝗䛜⾲㠃㟁఩䛻ཬ䜌䛩ᙳ㡪

24ᚤᑠ䝅䝵䝑䝖䜻/㉮ᰝᆺ䝥䝻䞊䝤᥈㔪㈏㏻㌿఩䛾࿘䜚䛻ప䛔㟁఩㡿ᇦỤཱྀ
Jpn.J.Appl.Phys. 2001஧䛴䛾䜾䝹䞊䝥䠖䛧䛛䛧㌿఩䛸䛾ᑐᛂ䛿ぢ䛴䛛䜙䛪⇃⏣Jpn.J.Appl.Phys. 2003ඹ㬆䝖䞁䝛䝹⣲Ꮚ䜢౑䛳䛯䜹䜸䝇⏕ᡂᅇ㊰䛸ಙྕฎ⌮䜈䛾ᛂ⏝
䜹䜸䝇ᅇ㊰

25

1997~ ๓⃝䚸ᕝ㔝㈇ᛶ᢬ᢠ⣲Ꮚ䠄ඹ㬆䝖䞁䝛䝹⣲Ꮚ䠅䛸L,C䛾⤌䜏ྜ䜟䛫

1/2

1/3

1/4䜹䜸䝇ฟຊ䝞䝑䝣䜯䞊ᥦ᱌䚸ཎ⌮ᐇド䠖Jpn.J.Appl.Phys.,1999
50GHzືస䠖Electron.Lett.,2002
88GHzືస䠖Electron.Lett.,2003䜹䜸䝇䠄㯮䠅/ศ࿘䛊䜾䝺䞊䠅㡿ᇦ䛜䝞䜲䜰䝇䚸ධຊ࿘Ἴᩘ➼䛻౫Ꮡ

26䝏䝑䝥ᐇ⿦ᢏ⾡䠖ᾮయ୰䛷䛾䝕䝞䜲䝇䝤䝻䝑䜽㓄⨨䜢⏝䛔䛯␗✀ᮦᩱ䝕䝞䜲䝇㞟✚≛≅ᒙ

1997~ ๓⃝䚸᭮ᡃ

Electron.
Lett., 2005

䝕䝞䜲䝇䝤䝻䝑䜽䛾స〇❑䜏㧗࿘Ἴ㊰ษ䜚
᭰䛘䝇䜲䝑䝏
䠄4FETs,CDSపῶ)IEICETrans.
Electronics,2008

GaN㟁⏺ຠᯝ䝖䝷䞁䝆䝇䝍
2000~

㟁Ꮚ㏿ᗘ

⛅⏣䠖GaNHEMTᢏ⾡䛾❧䛱ୖ䛢㧗࿘Ἴ≉ᛶ䛾 ᗘ౫Ꮡᛶ㐜ᘏ᫬㛫ゎᯒ䠖⛣ືᗘᚊ㏿䛸㏿ᗘᚊ㏿䛾୰㛫IEEEEDL,2001
phys.stat.sol.,2001

27

28
IEEETrans.ED,2003኱㔝㟁ὶ䝁䝷䝥䝇Ͳ1኱䛝䛺༳ຍ㟁ᅽ䛷㟁ὶ䛜ῶᑡ䝞䜲䜰䝇䝇䝖䝺䝇䛷㟁ὶῶᑡ

14䝀䞊䝖㛗䠖1.5Pm V step:1 V12 䝀䞊䝖ᖜ䠖20Pm GS

10108VGS=3 V
ID (mA)ID (mA)

8642
VGS=-3 V-20510VDS (V)

15w/o stress6䝇䝖䝺䝇᭷4020after stress(10 s @ P)

-5-410ග᭷

VGS; -5 (10s) > +1 > -5 (V)8P-3-2
VGS (V)-101㟁ὶᅇ᚟䛿ග䜢ᙜ䛶䜛ሙᡤ䛻౫Ꮡග䜢ᙜ䛶䜛䛸㟁ὶ䛜ᅇ᚟
VDS = 10 V䝇䝖䝺䝇↓VGS; -5 > +1 > -5 (V)2010

VDS = 10 V

VDS = 10 V
VGS; -5 > +1 > -5 (V)8illuminating on

Q26under illuminationග↓

420Dark

ID (mA)ID (mA)

D-G
642P-5-4-3-2
VGS (V)

-10

10Q1

G-S
10 s
P-5-4-3-2
VGS (V)-10129㟁ὶࢥࣛࣉࢫࡢࣔࢹࣝGate-5 V - - - - - - - -Source
0V

virtualgate(VGS -Vth)

1.䝀䞊䝖㟁ᴟ䛛䜙⣲Ꮚ⾲㠃䜈䛾㟁Ꮚὀධ
2.௬᝿䝀䞊䝖䛾ᙧᡂ
3.䝗䝺䜲䞁㟁ὶ䛾ῶᑡ䝗䝺䜲䞁㟁ὶ

RS

㟁఩

AlGaN

GaN

Drain
10 V

Appl.Phys.Lett.2004୰ୖ⾲㠃㟁఩䛜᫬㛫䛸䛸䜒䛻ኚ໬

30⾲㠃ಖㆤ⭷࡟ࡼࡾࢥࣛࣉࢫࢆᢚไ
IEEETrans.ED,2003
Si3N4 100 nm
Gate

Source10Drain

Al0.3Ga0.7N

5 nm

n- Al0.3Ga0.7N

10 nm

Al0.3Ga0.7N

5 nm

GaN

3 Pm

AlN

40 nm
Sapphire substrate,' P$8

VDS=10V䕿ಖㆤ⭷䛒䜚䖃ಖㆤ⭷䛺䛧

before stress6ಖㆤ⭷䛒䜚

4

before/after stress2after stress

0-5-4-3-2

9*6 9-10㟁ὶ䝁䝷䝥䝇/㐣Ώᛂ⟅ᢚไ䛿䜒䛠䜙䛯䛯䛝῝䛔‽఩⾲㠃‽఩䚸⏺㠃‽఩䝞䝹䜽୰‽఩䛷䛾䜻䝱䝸䜰ᤕ⋓䛸ᨺฟ
1.῝䛔‽఩䛾పῶ
2.䝅䝇䝔䝮䝃䜲䝗䛛䜙䛾せồ䛻ྜ䜟䛫䛯䝕䝞䜲䝇タィ31

32

GaN୰䛾῝䛔‽఩䛸䝕䝞䜲䝇≉ᛶ䝕䝞䜲䝇䛾㐣Ώ≉ᛶ ᐃ䛛䜙┤᥋῝䛔‽఩䛸䛾㛵ಀ䜢᫂䜙䛛䛻䛧䛶≉ᛶᨵၿ䛻䛴䛺䛢䛯䛔䚹ప࿘Ἴ㞧㡢䝁䞁䝎䜽䝍䞁䝇䛾࿘Ἴᩘศᩓ
㟁ὶDLTS(῝䛔‽఩䛻㉳ᅉ䛩䜛㟁ὶ㐣Ώᛂ⟅䛾ᗘ౫Ꮡ䝇䝨䜽䝖䝹 ᐃ䠅ప࿘Ἴ㞧㡢䚸䝁䞁䝎䜽䝍䞁䝇䛾࿘Ἴᩘศᩓ䛻䜘䜛㐣Ώᛂ⟅䛾ホ౯䝁䞁䝎䜽䝍䞁䝇

䝃䝉䝥䝍䞁䝇ప࿘Ἴ㞧㡢䛻 ᗘ䛻౫Ꮡ䛧䛯⫪ᵓ㐀Jpn.J.Appl.Phys.2001

䝃䝉䝥䝍䞁䝇䛾࿘Ἴᩘ౫Ꮡᛶ䛻ᗘ䛻౫Ꮡ䛧䛯䝢䞊䜽ᵓ㐀
Jpn.J.Appl.Phys.2003(ప࿘Ἴ㐣Ώᛂ⟅䠖㏻ಙᛂ⏝䛻䛚䛡䜛఩┦㞧㡢䛾ཎᅉ)33䜰䝺䝙䜴䝇䝥䝻䝑䝖ୖ䛷䛾άᛶ໬䜶䝛䝹䜼䞊䛾ẚ㍑

0.43eV0.47eV1/ʏ䡚ʍT2exp(ͲEa/kT)஧䛴䛾άᛶ໬䜶䝛䝹䜼䞊䛜୍⮴䠖୍䛴䛾῝䛔‽఩䛜䝕䝞䜲䝇≉ᛶ䛻✀䚻䛾ᙧ䛷⌧䜜䜛䚹㐣Ώᛂ⟅䛾㉳※䜢᫂䜙䛛䛻䛩䜛䛻䛿䚸άᛶ໬䜶䝛䝹䜼䞊Ea䜢ẚ㍑䛩䜛䛰䛡䛷䛿୙༑ศ䚹ᤕ⋓᩿㠃✚ʍ䛾୧᪉䜢ẚ㍑䛩䜛ᚲせ䛜䛒䜛䚹

34

35

㟁ὶDLTS䠄㟁ὶ㐣Ώᛂ⟅䛾 ᗘ౫Ꮡ䝇䝨䜽䝖䝹䠅 LTID(t)tID(t)tID(t)VDS
HTtTransientcurrent
AID(t1)Ͳ ID(t2)

t1 t2

VG

DLTS

ᐃ䝅䝇䝔䝮

TIDTransient

DLTS
#1

10

#3

Ἀ㔝4



22


1000

s䞉K

0
Ͳ2

W 䞉 T2DLTSSignal,b1

PA4

ᐃ౛

36
phys.Stat.sol.(a),2003
IEEEEDL,2004Ͳ4

100

Ͳ6#2
Ͳ8100

200

300 400
T K500

600

1022.5㈇䛾䝢䞊䜽䠖㟁Ꮚ䝖䝷䝑䝥ṇ䛾䝢䞊䜽䠖⾲㠃‽఩䠄䜈䛾䝀䞊䝖䛛䜙䛾㟁Ꮚὀධ䛸ᤕ⋓䠅䠄ṇᏍ䝖䝷䝑䝥䛷䛿䛺䛔䠅⾲㠃ಖㆤ⭷ᙧᡂ䛻䜘䜛ṇ䝢䞊䜽䛾ᾘኻ33.5
Ͳ11000/T K

44.5

Ea

#1 0.29eV#2 0.61eV#3 0.55eVGaN䛷䛾኱䛝䛺䝀䞊䝖䝸䞊䜽㟁ὶ䛸䛭䛾㉳※Ͳ137

Jpn.J.Appl.Phys.,2002
Ỉ㔝

GaN
GaAs

䝥䝷䝈䝬ฎ⌮ ↓᭷పᗘ䛻౫Ꮡ䛧䛺䛔

C2F6䝥䝷䝈䝬ฎ⌮䛻䜘䜛䝀䞊䝖䝸䞊䜽పῶ
GaN⣔䛷኱䛝䛺䝀䞊䝖䝸䞊䜽㟁ὶ38኱䛝䛺䝀䞊䝖䝸䞊䜽㟁ὶ䛸䛭䛾㉳※Ͳ2
Jpn.J.Appl.Phys.,2002
䝖䞁䝛䝹㟁ὶ㉳※䠖⾲㠃䛻㧗⃰ᗘṇ㟁Ⲵᒙ䛾Ꮡᅾ䛸ⷧ䛔✵ஈᒙ
C2F6䝥䝷䝈䝬ฎ⌮䛻క䛖῝䛔䜰䜽䝉䝥䝍‽఩䛾ᑟධ䛻䜘䜛ṇ㟁Ⲵ䛾⿵ൾ䝥䝷䝈䝬ฎ⌮๓✵ஈᒙ䛾ቑ኱䚸䝸䞊䜽㟁ὶ䛾పῶMISFET䛾᳨ウ㛤ጞ཯┬䠖῝䛔䜰䜽䝉䝥䝍‽఩䛾㉳※䜢ㄪ䜉䛺䛛䛳䛯䛣䛸䚹䝜䞊䝬䝸䜸䝣ືస䛚䛭䜙䛟F䛜AlGaN୰䛻ᑟධ䛥䜜䛯䚹኱㟁ຊ䝇䜲䝑䝏䛷䛿㔜せ39

AlGaN/GaN MISHFETͲ1䝀䞊䝖⤯⦕⭷䛸䛧䛶SiN䜢᳨ウⴠྜ
Jpn.J.Appl.Phys.,2003

w/SiN

w/oSiNMISFET:ప࿘Ἴ㞧㡢䛷㞧㡢ᑡ䛺䛟䝢䞊䜽䛺䛧䚹MISFET:䝞䜲䜰䝇䝇䝖䝺䝇䛻䜘䜛㟁ὶ䝁䝷䝥䝇䛺䛧䚹

MOS/AlGaN⏺㠃䛿MOS/AlGaAs⏺㠃䜘䜚䛿䜛䛛䛻Ⰻ䛔

40

AlGaN/GaN MISHFETͲ2䝀䞊䝖⤯⦕⭷䛸䛧䛶㧗ㄏ㟁⋡⭷䜢᳨ウἙ㔝,ᮡᾆ,ᮡᮏ䝗䝺䜲䞁㟁ὶ

ZrO2:ISCS,2004
HfO2:phys.stat.sol.,2007
HfO2:phys.stat.sol.,2008䝜䞊䝬䝸䜸䝣ືస䛷኱䛝䛺䝗䝺䜲䞁㟁ὶ䜢ᐇ⌧ᮡᾆ䝟䝘䝋䝙䝑䜽ୖ⏣ဴ୕䛥䜣䚸⏣୰ Ẏ䛥䜣

41

AlGaN/GaN MISHFETͲ4⏺㠃‽఩䛸FET䛾㟁Ẽ≉ᛶ䛸䛾㛵ಀᯘ䚸ᮡᾆ
SolidStateElectron.2010䝗䝺䜲䞁㟁ὶ

600(a)

500
400

16.1 s
8.2 s
3.4 s
1.0 s

300

D┦஫䝁䞁䝎䜽䝍䞁䝇䝠䝇䝔䝸䝅䝇ὀ䠖ఏᑟᖏ䛻㏆䛔‽఩䛿ᐤ୚䛧䛺䛔䚹

VG=0䛻ᡠ䛧䛶䜒⏺㠃‽఩䛾㟁Ꮚ䛿ᨺฟ䛥䜜䛺䛔

I [mA/mm]

䝗䝺䜲䞁㟁ὶ䛾㣬࿴

VG>0䛷⏺㠃‽఩䛻㟁Ꮚᤕ⋓

200
100
0-15-12-9V-6

GS

[V]

-303

ᐑᓮ

䝠䝇䝔䝸䝅䝇䛿VGᤲᘬ᫬㛫䛻౫Ꮡ

42

AlGaN/GaN MISHFETͲ3⤯⦕⭷/GaN⏺㠃‽఩పῶ䛻ྥ䛡䛯᳨ウ䝀䞊䝖⤯⦕⭷䠖Al2O310

ᐑᓮ

15w/o (NH 4) 2S

1014

it-2-1

D [cm eV ]with (NH 4) 2S

䝀䞊䝖ඛ⾜10131012(NH4)2Sฎ⌮

Al2O30.50.4

0.3

0.2

0.1

0E -E [eV]CtཎᏊᒙሁ✚䛾ሙྜ
Al2O3䛾᪉䛜䝧䝍䞊(⏺㠃‽఩䚸䝀䞊䝖䝸䞊䜽䠅(NH4)2Sฎ⌮䛷⏺㠃≉ᛶᨵၿ

SolidStateElectron.,2011

IEICE,2012䝀䞊䝖⤯⦕⭷䜢᭱ึ䛻ᙧᡂ䛩䜛䝥䝻䝉䝇䛷⏺㠃≉ᛶᨵၿ
ISCS.,2012ศᴟ䜢฼⏝䛧䛯䝜䞊䝬䝸䜸䝣ືస䛾ᐇ⌧IEEEEDL,2007ఀ⸨
TWHM2009 ᮤInGaNcap䛾ᑟධS

Drain Current(A/mm)

0.35

G
PSP p+-InGaN PPE

D

PSP i-AlGaN PPE
PSPi-GaN䜶䝢⤖ᬗ䠖䝟䜴䝕䝑䜽 ୰ᮧᩥᙪ䛥䜣

EcEF

Metal

43

VDS=5V

w/o InGaN cap
w/ i-InGaN cap
w/ p-InGaN cap(annealed at 800Υ)

0.3
0.25
0.2
0.15p+ศᴟ0.12.2V0.05
0-3+̺-2EcEF

AlGaN GaN
AlGaN GaN Metal
i-InGaN䝢䜶䝌ศᴟ䛾ຠᯝ-10Gate Voltage(V)

12Ec+̺EF

Metal
AlGaN GaN
p+-InGaNp+䛾ຠᯝ44GaNⷧᒙᤄධ䛻䜘䜛䝀䞊䝖䝸䞊䜽㟁ὶ䛾ᢚไJ.Appl.Phys.2012ᒣ⏣AlGaN

p-InGaN
i-GaN
AlGaN

GaN

GaN

1000

1000

1010

IG[A/mm]

IG[A/mm]

i-InGaN

0.10.001-510-70.001-510-71010-9100.1-9-3-2-1012310-3-2-1012

VGS[V]V [V]GaNⷧᒙ(1nm)䛺䛧

GaNⷧᒙ(1nm)ᤄධ

3GS

䝟䜴䝕䝑䜽 ୰ᮧᩥᙪ䛥䜣䚸㇏⏣୰◊ ຍᆅ ᚭ䛥䜣䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤㟁⏺ຠᯝ䝖䝷䞁䝆䝇䝍ᔱ⏣䠄⠛ཎ◊䠅

CNTͲFETsDS

VDS

holeAppl.Phys.
Lett.,2002

䝣䝷䞊䝺䞁䜢ෆໟ䛧䛯CNT:䝢䞊䝫䝑䝗45䝀䞊䝖㟁ᅽ䠖㈇(a) p channel(b) OFFelectron䝀䞊䝖㟁ᅽ䠖ṇ(c) n channel୧ᴟᛶఏᑟ䠄䝀䞊䝖㟁ᅽ䛻౫Ꮡ䛧䛶pᆺ䛻䜒nᆺ䛻䜒䛺䜛䠅䝅䝵䝑䝖䜻䝞䝸䜰䝖䝷䞁䝆䝇䝍䝰䝕䝹
(IBM)

46

㟁ᴟ㔠ᒓ䛾௙஦㛵ᩘ䛻౫Ꮡ䛧䛯ఏᑟᆺ
Nanotechnology,2006⬟⏕
10-6

VDS

-7

= -0.1 V

10-7

Pd(5.1eV)-8

10|ID|(A)|ID|(A)

1010-9

10-6

V

DS

= 0.1 VV

10-7Mg(3.7eV)-8

10|ID|(A)-61010-9DSCa(2.9eV)

10-8
10-9-10

10-10-111010-1210-12-10

10-12-10101010-10-1110-10-50

510= 0.1 V-11-505VGS (V)VGS (V)௙஦㛵ᩘ኱䠖pᆺ௙஦㛵ᩘ୰䠖pᆺ

10-50

5VGS (V)௙஦㛵ᩘᑠ䠖nᆺ䝕䝞䜲䝇ᛶ⬟䛿᭱⤊ⓗ䛻䛿䝁䞁䝍䜽䝖᢬ᢠ䛜Ỵ䜑䜛䚹䠄䛩䜉䛶䛾䝕䝞䜲䝇䛻ඹ㏻䠅

1047

Au䝁䞁䝍䜽䝖䛻䜘䜛nᆺఏᑟ䛾ᐇ⌧௒ᯞ Jpn.J.Appl.Phys.2012-8500

7 10-85 10✵Ẽ୰䠖pᆺ|ID|[A]-8

4 10-8

3 10-8┿✵/䜰䝙䞊䝹ᚋ䠖䚸nᆺ

2 10-8

1 100

Barrier height [meV]-8

6 10400p䝏䝱䝛䝹у400meV

300200n䝏䝱䝛䝹у240meV
100-8-1 10-10ཧ⪃௙஦㛵ᩘ(eV)-50VGS[V]AuCNT
5.14.8

5100-1.5 -1 -0.5 0 0.5 1 1.5 2 2.5
VGS[V]Au䛾䝣䜵䝹䝭䝺䝧䝹䛜ఏᑟᖏᐤ䜚䛻᮶䜛䝥䝑䝅䝳䝞䝑䜽ຠᯝ+ͲCNT✵Ẽ୰┿✵/䜰䝙䞊䝹ᚋ䠄㓟⣲䛾ᙳ㡪㝖ཤ䠅⌮ㄽ䠖䝣䜯䞁 䝕䝹䝽䞊䝹䝇ᘬຊ䠄᳃ᕝᩍᤵ䠅

48䜾䝷䝣䜵䞁㟁ᴟ䛻䜘䜛䝁䞁䝍䜽䝖᢬ᢠ䛾పῶ䛸ఏᑟᆺ䛾㉳※ Appl.Phys.Lett., 2012Au㟁ᴟ-10 V-910-1010-5

VGS=-10 V~ 0 V
1.0 V/step-5-8.0x10-4Gate-14-4-1.0-0.8-0.6-0.4-0.20.0㻌

0.0-5-4.0x10-5-6.0x10

㻌

ID (A)-15

10

VDS= -300 mV
Lch=3 Pm

VGS (V)-5-5-8.0x10

VGS=-10 V~ 0 V
1.0 V/step-4-1.0x10

a-C/Ni/Au-2/5/30 nm-10 V-4-1.010-1.8 -1.2 -0.6 0.0-2.0x10-1.2x10-121010

Au= 30 nm

VDS (V)䜾䝷䝣䜵䞁䛾ᅛ┦ᡂ㛗
(800Υ䜰䝙䞊䝹䠅-1110-13-1.0x10-1.2x10|ID| (A)-6.0x10㻌

-5-4.0x10

410 K
390 K
360 K-810㻌

Gr
CNT
SiO2=100nmp+ͲSi

10-5-2.0x10

ID (A)

Gr㻌
-7DrainAu
Ni

SourceAuNi⋢⨨

㻌

0.0-0.8-0.6-0.4-0.2

VDS (V)䜾䝷䝣䜵䞁㟁ᴟ

0.00.6

1.21.849䝥䝷䝈䝬Ẽ┦ᡂ㛗䜢⏝䛔䛯༙ᑟయⓗCNT䛾ඃඛᡂ㛗CH4 :H2
Quartztube
Microwave
Grid

Anode
Anode
Plasma 5cm4mm
CathodePump

Sample䜾䝸䝑䝗ᤄධᆺ䝥䝷䝈䝬CVDᡂ㛗

ᦆയపῶ
ᑠᓥ

Jpn.J.Appl.Phys.2005䜸䝣㟁ὶ䛾ẚ⋡䛜㠀ᖖ䛻ᑡ䛺䛔༙ᑟయⓗCNT䛾ඃඛᡂ㛗䠛኱୰Jpn.J.Appl.Phys.2006

༙ᑟయⓗCNTඃඛᡂ㛗䛾䝯䜹䝙䝈䝮
ᯫᶫCNT䜢౑䛳䛯䝷䝬䞁

ᐃ

50

኱୰䚸Ἀᕝ

J.Appl.Phys.,2009ᒁᡤ䝀䞊䝖㢧ᚤ㙾䜢౑䛳䛯㟁ὶኚㄪീAu㟁ᴟExt. laser [nm]

600
semi.
metal

550
532
500
450

Au㟁ᴟ

Int. (arb. unit)㟁ᴟ➃䛷✵ஈᒙ䛜ᙧᡂ䛥䜜䛶䛔䛺䛔
1400 1500 1600 1700

100

150

200

250

Raman shift (cm-1)

300

䝷䝬䞁䛷㔠ᒓCNT䛻ᑐᛂ䛧䛯ಙྕ䛜ぢ䛘䜛Ḟ㝗䛻䜘䜚⏕ᡂ䛥䜜䛯㞀ቨ䛜䝗䝺䜲䞁㟁ὶኚㄪ䛾㉳※

51䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤ⷧ⭷䝖䝷䞁䝆䝇䝍
CNTᐦᗘ䛜㧗䛟䚸䝏䝱䝛䝹㛗10Pm䛸ẚ㍑ⓗ▷䛔䛻䜒㛵䜟䜙䛪䝗䝺䜲䞁㟁ὶ䛾䜸䞁/䜸䝣ẚ䛿105䛸኱䛝䛔䚹DrainSource

10ʅmⷧ⭷䝖䝷䞁䝆䝇䝍1Pmᑠ㔝 Nanotechnology,2010

52

1.2

1.2

1.0

1.0

0.8

0.8

0.6

-ID (mA/mm)-ID (mA/mm)

䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤ⷧ⭷䝖䝷䞁䝆䝇䝍䛾ᆒ୍ᛶ+ 12%

0.4
0.2 9'69ch-20-15+ 0.5V

0.40.2

L : 15 Pm

0-25

0.6

-10 -5V (V)GS

050-5 -4 -3 -2 -1 0 1 2 3 4 5Vth (V)

ID:㼼10%
Vth:Ͳ0.93+0.5V

10CNTFETs

䜀䜙䛴䛝䠖 ༢୍䝘䝜䝏䝳䞊䝤䜢౑䛳䛯䝖䝷䞁䝆䝇䝍䛻㍑䜉䜛䛸䛿䜛䛛䛻ᑠ䛥䛔

CNTⷧ⭷䝖䝷䞁䝆䝇䝍୰つᶍ㞟✚ᅇ㊰䠄108䝖䝷䞁䝆䝇䝍䠅 53
Appl.Phys.Express,2010Ἀᕝ䚸ᑠ㔝▼ⱥᇶᯈୖᇙ䜑㎸䜏䝞䝑䜽䝀䞊䝖

ab

150c
Delay time (s/gate)100

Output (mV)

10500-50-100-150
0100

200
Time (Ps)

Ⓨ᣺Ἴᙧ

300

400-5d30 Pm▷䝏䝱䝛䝹໬䛷㧗㏿ືస
100.51Ps/gate-610 Pm

10-710-6-5

100.0001
Power dissipation (W/gate)㐜ᘏ᫬㛫䛸ᾘ㈝㟁ຊ䛾㛵ಀ54䝘䝜䜹䞊䝪䞁䝖䝷䞁䝆䝇䝍㛫䛷䛾ẚ㍑
0.1

Switching Time (s)Delft Univ.

0.001

Ext. wiring

Stanford
Univ.

-510Univ.
Minnesota
printedNagoya
Univ.

on single CNT
IBM0Univ.
Illinoistransfertransfer

10-710-9

CNT-TFTs
CNT-FETs

Presentstudy
pref. growth㧗ᛶ⬟໬䛾᪉ྥ

4080Number of Transistors120䝣䝺䜻䝅䝤䝹ᇶᯈୖ䛻
CNTⷧ⭷䝖䝷䞁䝆䝇䝍㞟✚ᅇ㊰䜢ᐇ⌧
CNT䝛䝑䝖䝽䞊䜽䛾㌿෗ᢏ⾡䛾㛤Ⓨ▼஭䚸஧᐀䝣䝺䜻䝅䝤䝹䛺(PEN)ᶞ⬡ᇶᯈୖ䛻స〇䛧䛯㞟✚ᅇ㊰䝸䞁䜾Ⓨ᣺Ἴᙧ䝇䝢䞊䝗䠖1.4Ps/gate䝏䝱䝛䝹㛗䠖10Pm

55

CNTⷧ⭷䝖䝷䞁䝆䝇䝍䛾㉮ᰝᆺ䝥䝻䞊䝤㢧ᚤ㙾䜢⏝䛔䛯ホ౯䞉ゎᯒ56Ἀᕝ Nanotechnology,2011พฝീ

⾲㠃㟁఩ീ

᢬ᢠศᕸീ

㟁ὶኚㄪീ

1 Pm
VDS = -2 V

lowhigh2 Pm

0= -0.2 V
DS

Potential (V)V| ID | (nA)

10
10.1
0.01-10-1S-1.5

0
VGS (V)

5D
VDS = -2 V-2-5CNT䝏䝱䝛䝹䛿䚸䜸䝣䛻㏆䛔≧ែ䛷䛿䚸ᓥ≧䛻䛺䛳䛶䛔䜛

VDS = 0 V-0.5100

༙ᑟయඃඛᡂ㛗䛾ᚲせᛶ

10-2.5012345Distance (Pm)67≉ᐃ㡿ᇦ◊✲䠄䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䝘䝜䜶䝺䜽䝖䝻䝙䜽䝇䠅䠄䠎䠌䠌䠓䡚䠎䠌䠍䠍䠅 57ᶵ⬟ᛶ䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䛾๰〇䜾䝹䞊䝥༢୍䜹䜲䝷䝸䝔䜱ᡂ㛗䛾ྍ⬟ᛶ䜢ᐇド䠄ᡂ㛗ἲ䛻౫Ꮡ䛫䛪䠅(6,5)⇕CVD(ᮾ኱ ୸ᒣᩍᤵ䠅
phys.stat.sol.(b),(2012),
submitted䝥䝷䝈䝬CVD(ᮾ໭኱ ␊ᒣᩍᤵ䠅 䝺䞊䝄⵨Ⓨ(㤳㒔኱ 㜿▱Ἴᩍᤵ䠅
ACSNano 4,7395(2010)

tobesubmitted䛔䛪䜜䛾ᡂ㛗ἲ䛷䜒䝙䜰䜰䞊䝮䝏䜵䜰䚸≉䛻(6,5)䝘䝜䝏䝳䞊䝤 䛜ඃඛⓗ䛻ᡂ㛗䠄⏕ᡂ䜶䝛䝹䜼䞊䛾⌮ㄽィ⟬⤖ᯝ䛸ྜ⮴䠅58≉ᐃ㡿ᇦ◊✲ᡂᯝ䠖ྛ✀CNT䛾඲䜶䝛䝹䜼䞊䛾㧗⢭ᗘィ⟬䠄ᮾᕤ኱ ᩪ⸨ᩍᤵ䠅⦪㍈䠖䜾䝷䝣䜵䞁䛻ᑐ䛩䜛඲䜶䝛䝹䜼䞊ቑຍ㔞䠄୍ཎᏊᙜ䛯䜚䚹䛯䛰䛧᭤䛢䛻䜘䜛䜶䝛䝹䜼䞊ቑຍ䜢ᕪ䛧ᘬ䛔䛶䛒䜛䚹䠅K.KatoandS.Saito,Physica E.43,669(2011)⣽䛔䝙䜰䜰䞊䝮䝏䜵䜰䛜ᡂ㛗䛩䜛䛣䛸䛜ከ䛔 я ඲䜶䝛䝹䜼䞊䛿ኴ䛔䜋䛹ᑠ䛥䛔љ඲䜶䝛䝹䜼䞊௨እ䛻ゐ፹⢏ᚄ䛜㛵୚䠛௚䛾せᅉ䛿䠛䠄཯ᛂ㏿ᗘㄽ䠖཯ᛂ䝞䝸䜰䠛䠄㜿▱Ἴᩍᤵ䠅䠅≉ᐃ㡿ᇦ◊✲ (䜹䞊䝪䞁䝘䝜䝏䝳䞊䝤䝘䝜䜶䝺䜽䝖䝻䝙䜽䝇䠅䛾௦⾲䜢ົ䜑䛶஦ᚋホ౯䠖A⤖ᬗ䚸ホ౯䚸⌮ㄽ䠖ᵝ䚻䛺ศ㔝䛾䛩䜀䜙䛧䛔◊✲⪅䛸▱䜚ྜ䛔䛻䛺䜜䛯䚹䝕䝞䜲䝇௨እ䛾ከ䛟䛾ศ㔝䛾ຮᙉ䜢䛥䛫䛶䛔䛯䛰䛔䛯䚹ከ䛟䛾᪉䛻ᨭ䛘䛶䛔䛯䛰䛔䛯䠖䛒䜚䛜䛸䛖䛤䛦䛔䜎䛩䚹☾㍯♸Ꮚ䛥䜣

⿵㊊䠖 䛔䛟䛴䜒䛾◊✲ศᢸ⪅䛻䛺䛳䛶䛔䜛䚹

59

60

⛉◊㈝/➇தⓗ㈨㔠䛾ᑂᰝဨ䜢䜔䛳䛶ឤ䛨䛯䛣䛸ෆᐜ䛾䛩䛠䜜䛯䜒䛾䛿䚸⡆₩䛷䜰䝢䞊䝹Ⅼ䛜䛿䛳䛝䜚䛧䛶䛔䜛䚹ෆᐜ䛾ஈ䛧䛔䜒䛾䜋䛹䚸䛯䛟䛥䜣᭩䛔䛶䛒䜛ഴྥ䚹䜰䝢䞊䝹Ⅼ䛜䛿䛳䛝䜚䛧䛺䛔䚹ᑓ㛛䛾㏆䛔ே䛜ᑂᰝ䛜ᑂᰝ䛩䜛䛸䛿㝈䜙䛺䛔䚹᪩䛔ẁ㝵䛷ᑂᰝဨ䛾ᚰ䜢䛔䛛䛻䛴䛛䜐䛛䠛᭱ᮇ䜎䛷ㄞ䜣䛷䜘䛖䜔䛟䝫䜲䞁䝖䛜ᥗ䜑䜛᭩䛝᪉䛿ᦆཧ⪃䠖IEEEFellow䛾ᑂᰝNomineeNominator
Reference

Evaluatorї Nominationcommittee

61IEEEElectronDeviceLetter䛾 Editor(2003~2006)䜢䜔䛳䛶ឤ䛨䛯䛣䛸ୡ⏺ⓗ䛻ⴭྡ䛺ே䛿ᰝㄞ䜢౫㢗䛧䛶䜒䜔䛳䛶䛟䜜䛺䛔䛣䛸䛜ከ䛔䚹ᰝㄞ⪅ೃ⿵䛻䛿ᛁ䛧䛭䛖䛺ⴭྡே䜢ᣲ䛢䛺䛔᪉䛜Ⰻ䛔䚹እᅜ䛾ே䛿ᰝㄞุᐃ䛻཯ㄽ䛧䛶䛟䜛ẚ⋡䛜㧗䛔䚹䜰䝆䜰⣔䛾ே䛿ྂ䛔䝔䞊䝬䛷⌧ᅾ䛿䛒䜎䜚䜔䜙䜜䛶䛔䛺䛔䝔䞊䝬䛾◊✲⤖ᯝ䜢ᢞ✏䛧䛶䛟䜛ẚ⋡䛜㧗䛔䚹ⱥ఍ヰ⬟ຊ䜢ྥୖ䛥䛫䜘䛖62཯┬䠖▱䛳䛶䛔䜛䛣䛸䛿⌮ゎ䛷䛝䜛䛜䚸▱䜙䛺䛔䛣䛸䛿⌮ゎ䛷䛝䛺䛔䚹ᅜ㝿఍㆟➼䛷䛾᝟ሗ཰㞟䛜䜎䜎䛺䜙䛺䛔䚹⚾䛾ⱥ఍ヰᏛ⩦

Schlachetzki䛥䜣䛸㆟ㄽ

Raina䛥䜣䛸䝔䝙䝇Ꮫ⏕᫬௦䠖䝷䝆䜸ⱥ఍ヰ䚸ⱥㄒ䛾ḷ
1975:AndreasSchlachetzki䠖NTTึ䛾஺᥮◊✲ဨ(ᙜ᫬⊂㒑㟁┬䚸⌧Braunschbeig Univ.ᩍᤵ)
1977~1978?:Raina䛥䜣(ⱥ఍ヰㅮᖌ䠅
1985~1986?:April䛥䜣(ⱥ఍ヰㅮᖌ䠅
1987:JesusA.delAlamo䠖NTTึ䛾እᅜே♫ဨ䠄⌧MITᩍᤵ)
1992:SteffenKoch䠖䝫䝇䝗䜽䠄⌧ 䝗䜲䝒እົ┬?䠅
1993:KevinJ.Chen䠖䝫䝇䝗䜽䠄⌧ 㤶 ⛉Ꮫᢏ⾡኱Ꮫᩍᤵ䠅ⱝ䛔ே䜈䛾䜰䝗䝞䜲䝇䠖⩦䛖䜘䜚័䜜䜝䛸䜒䛛䛟⥆䛡䜛䛣䛸䚹ṇ☜䛺ⱥㄒ䜢ヰ䛭䛖䛸ᛮ䜟䛺䛔䛣䛸䚹ⱥ఍ヰ⬟ຊ䜢ྥୖ䛥䛫䜘䛖63཯┬䠖▱䛳䛶䛔䜛䛣䛸䛿⌮ゎ䛷䛝䜛䛜䚸▱䜙䛺䛔䛣䛸䛿⌮ゎ䛷䛝䛺䛔䚹ᅜ㝿఍㆟➼䛷䛾᝟ሗ཰㞟䛜䜎䜎䛺䜙䛺䛔䚹⚾䛾ⱥ఍ヰᏛ⩦Ꮫ⏕᫬௦䠖䝷䝆䜸ⱥ఍ヰ䚸ⱥㄒ䛾ḷ
1975:AndreasSchlachetzki䠖NTTึ䛾஺᥮◊✲ဨ(ᙜ᫬⊂㒑㟁┬䚸⌧Braunschbeig Univ.ᩍᤵ)
1977~1978?:Raina䛥䜣(ⱥ఍ヰㅮᖌ䠅
1985~1986?:April䛥䜣(ⱥ఍ヰㅮᖌ䠅
1987:JesusA.delAlamo䠖NTTึ䛾እᅜே♫ဨ䠄⌧MITᩍᤵ)
1992:SteffenKoch䠖䝫䝇䝗䜽䠄⌧ 䝗䜲䝒እົ┬?䠅ⱝ䛔ே䜈䛾䜰䝗䝞䜲䝇䠖
1993:KevinJ.Chen䠖䝫䝇䝗䜽䠄⌧ 㤶 ⛉Ꮫᢏ⾡኱Ꮫᩍᤵ䠅⩦䛖䜘䜚័䜜䜝䛸䜒䛛䛟⥆䛡䜛䛣䛸䚹ṇ☜䛺ⱥㄒ䜢ヰ䛭䛖䛸ᛮ䜟䛺䛔䛣䛸䚹

Schlachetzki䛥䜣䛸㆟ㄽ

Raina䛥䜣䛸䝔䝙䝇እᅜேྥ䛡䛾ヰ㢟䝛䝍䜢ᣢ䛸䛖᪥ᮏᩥ໬䛸ⱥ఍ヰ䠄୍▼஧㫽䠅ゅ㞃䛧䠄ⰼ᎑䠅䠖 Hidinghornofjealousyኵ䜈䛾ᚑ㡰䞉⊩㌟䜢⾲䛩䚹㓇䛸⢭⡿Ṍྜ䠖 ኱ྫྷ㔊䠖50%,ྫྷ㔊䠖 60%,ᮏ㔊㐀䠖 70%௨ୗ,㣗⏝䛾ⓑ⡿:90%
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65ⱝ䛔ே䜈䠖䝁䝭䝳䞊䝙䜿䞊䝅䝵䞁⬟ຊ䜢㧗䜑䛶䛟䛰䛥䛔䝥䝺䝊䞁䝔䞊䝅䝵䞁⬟ຊ䛿ᚲせ᮲௳䛷䛒䛳䛶༑ศ᮲௳䛷䛿䛺䛔䚹䝁䝭䝳䞊䝙䜿䞊䝅䝵䞁䠖཮᪉ྥ⌮ゎ䛩䜛⬟ຊ䚸ఏ䛘䜛⬟ຊ䚸ఏ䛘䜛䜉䛝䜒䛾䜢ᣢ䛳䛶䛔䜛䛣䛸䚹Ỉ㇂◊䛾䛥䛥䜔䛛䛺⮬៏䠖
M1୰㛫Ⓨ⾲/◊✲ᐊ䛷䛾䝸䝝䞊䝃䝹䛺䛧⮬୺ⓗ䛻௰㛫䚸ඛ㍮䛾๓䛷⦎⩦䚸┦஫䛻䜰䝗䝞䜲䝇䠄䝸䝝䞊䝃䝹䜢䜔䜙䛺䛔᪉䛜ᡂ⦼䛜Ⰻ䛛䛳䛯䚹䠅䠐᭶䛾⮬ᕫ⤂௓䚸䝧䝇䝖䝥䝺䝊䞁䝔䞊䝅䝵䞁㈹66

ㅰ㎡䛣䜜䜎䛷䛾ᚚᨭ᥼䚸ᚚᣦᑟ䛻 ᚰ䜘䜚ឤㅰ䛔䛯䛧䜎䛩䚹䛒䜚䛜䛸䛖䛤䛦䛔䜎䛧䛯䚹Ꮫ⏕䛾䜏䛺䛥䜣䚹ⱝ䛔䜶䝛䝹䜼䞊䜢ศ䛡୚䛘䛶䛟䜜䛶䛒䜚䛜䛸䛖䛤䛦䛔䜎䛧䛯䚹