PRELIMINARY

INK0302FC1

Notice : This is not a final specification
Some parametric are subject to change.

High Speed Switching
Silicon N-channel MOSFETOUTLINE DRAWINGDESCRIPTION

Unit：mm

INK0302FC1 is a Silicon N-channel MOSFET.

2.8

This product is most suitable for use such as portable

1.5

0.65

machinery,

0.65

0.4

0.95

②1.9

FEATURE

①0.95

2.8

because of low voltage drive and low on resistance.

・Input impedance is high, and not necessary to consider a drive③electric current.
・High drain current ID=3.2A

0.13

・Low on Resistance. RDS(ON)=70mΩtyp(@VGS=4.5V)

0.8

1.1

・Drive voltage 2.5V
RDS(ON)=105mΩtyp(@VGS=2.5V).

0～0.1

・High speed switching.

APPLICATIONTERMINAL CONNECTORHigh speed switching, Analog switching①：GATE②：SOURCE③：DRAIN

MAXIMUM RATINGS（Ta=25℃）
Parameter
Drain-Source Voltage

SymbolVDSS

RatingGate-Source Voltage
Drain Current(DC)(※1)

VGSS
ID

±103.2

V
A

Drain Current(Pulse) (※2)

IDP

7.0A

PD

0.9

W

TchTstg＋150℃℃

Total Power Dissipation(※1)

Channel Temperature
Storage Temperature

30-55～+150

Unit
V

JEITA：SC-59
JEDEC：Similar to TO-236

EQUIVALENT CIRCUIT

MARKING

K・D※1 package mounted on glass-epoxy substrate.
(39mm×39mm×1.6mm,Cu pad 1500mm2)※2 Pw≦10ms , Duty cycle≦1%

ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter

SymbolDrain-Source Breakdown Voltage

Test Condition

Limit
MIN

TYP

MAX

Unit

V(BR)DSS

ID=100µA，VGS=0V

30--V

Gate-Source Leak Current

IGSS

VGS=±10V，VDS=0V

--

±1.0

µA

Zero Gate Voltage Drain Current

IDSS

VDS=30V，VGS=0V--1.0µA

Gate Threshold Voltage

VthID=250µA，VDS=VGS

0.4-

1.2V

ID=3.2A，VGS=4.5V

-

7087

ID=3.2A，VGS=2.5V-

105135-320--55--40--15--60-

Static Drain-Source On-StateResistanceRDS(ON)

Input Capacitance

Ciss

Output Capacitance

CossFeedback Capacitance

Crss

Switching Time

ton
toff

VDS=10V，VGS=0V，f=1MHz

VDD=20V，ID=200mA，VGS=5VmΩ

pF

nsPRELIMINARY

INK0302FC1

Notice : This is not a final specification
Some parametric are subject to change.

High Speed Switching
Silicon N-channel MOSFETTYPICAL CHARACTERISTICS
ID - VDS(Low Voltage Area)

ID - VDS

500

4.0
2.5V

Ta = 25℃

1.5V

300

1.4V

200

1.9V

2.5

1.8V

2.0

1.7V

1.5

1.3V

1.0

VGS=1.2V

0.5

100

1.6V
1.5V
VGS=1.4V
1.3V

000

0.1

0.2

0.3

0.4

0

0.5

0.5

Drain-source voltage
VDS (V)

1.0

IDR - VSD

2.0

2.5

3.0

ID - VGS
10

VGS = 0V

VDS = 10V

1

Drain current
ID (A)

Reverse drain current
IDR (A)

1.5

Drain-source voltage
VDS (V)10

Ta=125℃
75℃
25℃
-25℃

0.1

0.01

1Ta=125℃
75℃
25℃
-25℃

0.1

0.01
00.5

1.0

1.501

Source-drain voltage
VSD (V)

23

Gate-source voltage
VGS (V)Vth - Ta|Yfs| - ID
101.5

VDS = 10V

Forward transfer admittance|Yfs| (S)ID = 0.25mA
VDS = VGS

Gate threshold voltage
Vth (V)Ta = 25℃

3.0
Drain current
ID (A)

Drain current
ID (mA)

400

2.0V

3.0V

3.5

1.6V

1.0

0.5

1
Ta=
125℃
75℃
25℃
-25℃

0.1

0.01

0-50

050

100

Ambient temperature
Ta (℃)

1500.010.1

1

Drain current
ID (A)

10

PRELIMINARY

INK0302FC1

Notice : This is not a final specification
Some parametric are subject to change.

High Speed Switching
Silicon N-channel MOSFETRDS(ON) - ID

RDS(ON) - ID

10
Static drain-source on-state resistanceRDS(ON) (Ω)

Static drain-source on-state resistanceRDS(ON) (Ω)

10
VGS = 4.5V

1
Ta=125℃
75℃
25℃
-25℃
0.1

VGS = 2.5V

1

Ta=125℃
75℃
25℃
-25℃

0.1

0.01

0.01
0.01

0.1

10.01

100.1

Drain current
ID (A)RDS(ON) - VGS

RDS(ON) - Ta300
Static drain-source on-state resistanceRDS(ON) (mΩ)

Static drain-source on-state resistanceRDS(ON) (Ω)

10Drain current
ID (A)

1.0
ID = 1A

0.80.60.4

Ta=125℃
75℃
25℃
-25℃

0.2002468200

VGS = 2.5V
ID = 3.2A

100
VGS = 4.5V
ID = 3.2A

010-500Gate-source voltage
VGS (V)

50

100

150Ambient temperature
Ta (℃)C - VDSt - ID

1000

10000
Ciss

Ta = 25℃
VDD = 20V
VGS = 5V

toff

100
Coss
Crss
10
Ta = 25℃
VGS = 0V
f = 1MHztf
100

1010.1

Switching timet (ns)1000
CapacitanceC (pF)

1

1

10

Drain-source voltage
VDS (V)100

10.001

tontr

0.01

0.1

Drain current
ID (A)

1

PRELIMINARY

INK0302FC1

Notice : This is not a final specification
Some parametric are subject to change.

High Speed Switching
Silicon N-channel MOSFET

rth(ch-a) - Pw)

ASO

100

7A

10

Ta = 25℃
Single Pulse
package mounted on
glass-epoxy substrage(39mm×39mm×1.6mm)

3.2A

1

Drain current
ID (A)

Transient thermal resistancerth(ch-a) (℃/W)

1000

10Ron Limit87mΩ

0.1

package mounted on
glass-epoxy substrage(39mm×39mm×1.6mm)

0.01

1

Ta = 25℃
Single Pulse
30V0.001

1101001000

0.1110100Drain-source voltage
VDS (V)

Pulse width
Pw (ms)PD - Ta
1000
900
Drain power dissipation
PD (mW)

800
700

600
500
400
package mounted on
glass-epoxy substrage(39mm×39mm×1.6mm)

300
200
10000255075

100125150

Ambient temperature
Ta (℃)

Switching time test condition

5V

90%

OUT
IN

RL

50Ω

VDD

Input waveform

5V0V

IN

10%0V

VDD

10%10us
Duty ≦ 1%
Input：tr, tf < 10ns
VDD = 20V
Common source
Ta = 25℃

Output waveform
90%VDS(on) td(on)td(off)trtontftoffKeep safety first in your circuit designs!
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placementof substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap.
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Jun.2024