2024 Product Catalog

About ATP
Since 1991, we have consistently distinguished ourselves as one of the world’s leading original equipment manufacturers (OEM) of
high-performance, high-quality and high-endurance NAND flash products and DRAM modules. As a manufacturing leader, we provide
memory and storage solutions trusted by diverse industries that require high levels of technical proficiency, manufacturing quality, andwide operating temperature ranges.
We reinforce our leadership by continuing to blaze the trail as:
The Global Leader in Specialized
Storage and Memory Solutions

The Thermal Experts in
Storage and Memory Solutions

A True Manufacturer

ATP-developed firmware and mass
production infrastructure are fully capableof addressing any variety of embedded/
industrial usage cases. We can provide
specialized configurations to support uniquememory and storage requirements,
all with the aim of delivering best total costof ownership (TCO) for our customers.

We are widely known as one of the firstto develop industrial-temperature (I-Temp)
3D NAND flash storage for extreme
operating conditions. This expertise
continues to this day as customizable
thermal solutions are made available
for the latest NVMe modules that run
at blistering speeds. Through constantcollaboration with customers, as well as our
top-notch firmware and hardware
engineering capabilities, we make surethat optimal sustained performanceis achieved despite freezing cold or blazing
hot temperatures.

We manage every stage of the manufacturing
process to ensure quality and productlongevity, offering in-house design, testing,and tuning from integrated circuits (ICs) tomodule and drive level. All products are
meticulously tested and validated before
leaving our manufacturing facilities to makesure that they comply with the strictest
industry standards and that they will operatereliably under rugged conditions andworkloads for a long time.

ATP EUROPE
ATP USAMUNICH, GERMANY

SAN JOSE, CA, USA

ATP CHINA

ATP JAPAN
TOKYO, JAPANSHANGHAI, CHINA

ATP HEADQUARTERS
TAIPEI, TAIWAN

Table of Contents

2

About ATPPresident's Message
ATP's Complete Process Ownershipand Benefits to the Customer
Segment Solutions Overview

2
3
4

Certifications, Associations and CompliancesEnterprise-Readiness Standards andIndustrial Enterprise
Automotive Storage Solutions
Thermal Storage Solutions
High-Endurance Storage Solutions
Security Storage Solutions
Value Line SSDs
DDR5 Overview

8
9

6

13
15
18
22
23
25

DRAM SOLUTIONS
DDR5Longevity Program
Complete DRAM Portfolio

26
30
32
33

FLASH SOLUTIONSSolid State Drives and Modules
Memory Cards
Managed NAND

34
35
46
52

Flash Products Naming Rule
Solutions & Technologies
Flash Technology Overview table
Complete Flash Spec Overview& Product Dimensions

55
56
59
60

President's Message
2023 was a challenging year, not only for ATP Electronics, but for the global memory and storage business.
With over 30 years of experience, we have once again risen above the challenges, strongly convinced thatthe long-term value we provide our customers and suppliers surpasses the cyclical turns in the market.
Closely working with you has led to stronger partnerships that have enabled us to navigate challenging times.
Despite this latest downturn, we have doubled down by undertaking two of the largest and most significant
investments in our company's history.
First, we have completely overhauled our enterprise resource planning (ERP) system and business processes tobe more efficient, ultimately becoming more agile in our service and flexibility.
Second, we are one year into developing our new validation, production, and test facility with our schedule ontime to enter production by early 2025. The deployed digital transformation, automation, and sustainability
technologies will allow for green and lean production in both our legacy "high mix" and "high volume"
manufacturing areas. This will ultimately result in ongoing cost and logistics improvements for our customers.
By aggressively investing in the downturn, ATP is positioning our "We Build With You" readiness to a new level.
This year, you can expect many exciting announcements and invitations to learn more about these initiatives.
The past year may have been challenging, but we are moving forward with unwavering confidence. We appreciate
your constant support and partnership and invite you to keep building with us through 2024 and beyond.

Jeff Hsieh
President

3

ATP’s Complete Process Ownership
Why are We Unique?
One size does not fit all. ATP recognizes the uniqueness of each customer’s requirements, so we go the extra mile
to custom-configure our storage and memory solutions according to the needs of our customers.
We begin our Solution and Quality journey at the IC level. This serves as the foundation of all ATP products.
We maintain complete control of our supply chains and take charge of all stages. We are capable of end-to-end
management of all the processes to make sure that our solutions meet customers’ strictest requirements.

Our Commitment: We Build With You.
Through Process Ownership, we craft the solution for your unique case.
It is your solution, your product.

NAND/DRAM IC
Validation

NAND Wafer
Management

Package Level
Validation

NAND Flash
Screening

Design Validation& Testing

Pilot Run

Mass Production

Industry-Standard Product Development

Our quality journey begins here,
at the very basic component level, the ICs.

4

How Does ATP’s Process Ownership Help You?
Longevity & Flexibility

1. Long-term planning with supply partners
2. Controlled BOM
3. IC to module packaging capabilities

Stability

Dual-sourcing strategy

Market/Technology Intelligence
Smooth Qualifications & Transitions

5-year component roadmap from NAND maker including
fab alignment diversification plan

SUPPLY
Longevity &Flexibility
Market/Technology
Intelligence,
SmoothQualifications�&Transitions

Stability

QUALITY

ENGINEERING

Stringent
DRAM
Testing

Endurance &Reliability

DesignValidation &Comprehensive
Testing for
NAND Flash
Mission-Critical
Testing
Applications

Stringent DRAM Testing

1. Automatic Test Equipment (ATE)
2. 100% system-level burn-in testing
3. 100% test during burn-in (TDBI) with
ATP-designed mini chamber

Comprehensive NAND Flash Testing
1. IC to drive-level validation
2. NAND flash production screening with
ATP-designed Rapid Diagnostic Test (RDT)

ThermalManagement

Security

Endurance & Reliability
1. TLC-based drives configured to equal/exceed SLC/MLC endurance
at reasonable total cost of ownership
2. Diverse configuration options for optimal cost-per-GB or cost-per-endurance
3. Superior data reliability with hardware-based power loss protection (PLP)
technology integrated with a microcontroller unit (MCU)

Thermal Management

Design Validation & Testingfor Mission-Critical Applications

1. NAND flash solutions rated for operation under industrial
temperature (-40°C to 85°C) and above
2. Wide-temperature DRAM solutions
3. Thermal customization testing, and validation on PCIe Gen4
and Gen3 drives for high-performance applications
4. Heatsink solutions

1. Design/product characterization
specification validation
2. Mean Time Before Failure (MTBF) &End-Of-Life (EOL) Testing
3. Printed circuit board assembly (PCBA)
solderability validation

1. Customized security solutions beyond AES 256-bit encryption, TCG Opal 2.0
2. Self-built HW, API FW, SW for data-at-rest to IoT security solutions
3. Content preload and encryption service

Security5

Segment Solutions Overview
Our legacy and latest-generation memory and NAND flash storage solutions meet the diverse reliability,
endurance, and longevity requirements of applications in a wide range of segments, such as:

Networking /Telecom

Automotive

Transportation

Industrial /Automation

Defense /Aerospace

IoT

Healthcare

Retail/Finance

Automotive Grade temperature (AG2 & 3)

ThermalHigh/Low-temperature reliability validation
Tailored thermal solutions• High-endurance 3D TLC/pSLC/SLC series• Capacity overprovisioning settings• MCU-based power loss protection (PLP)Enterprise Standard
Endurance••••

Security

Endurance

Industrial temperature operation

AES, TCG Opal 2.0, Self-Encrypting Drive
Secure Erase
Customized encryption security
Write Protection
TSE Storage Solutions• IATF 16949• AEC-Q100• VDA 6.3

Quality

DRAM TDBI extreme low
fail rate

MIL-STD-810G• FCC, CE, UKCA, VCCI, BSMI, KCC, RCM, IC, UL, CB, CSA, Morocco, etc. (optional)• ROHS, REACH Collaboration on customer-specific test, qualification, and validation that are beyond JEDEC standards

Supply & Service

Enterprise Standard Tests

6

5 years+ longevity and BOM control• Content Preload service• Joint Validation

7

Our Corporate Responsibility Commitment

Certifications
According to leading industry standards

ISO 9001:2015

ISO 14001:2015

ISO 45001:2018

VDA 6.3

IATF16949:2016

Sony
Green Partner

ISO14064-1:2018

ATP has extensive product validation experience in industry-specific standards, including:• AEC-Q100• SNIA• JESD219• IEC 60529• IP6X• ATIS• JESD22-A110• MIL-STD-883• IEC 61000-4-2:2008

Industry Associations and Compliances

8• JESD78B• UL94-v0

ISO/IEC 17025:2017

Two Worlds are Merging!�

IT and OT Convergence Requires a New Breed of Data Storage Solutions
for the Industrial Enterprise

The world of information technology (IT) deals with data handling, communication, and processing using traditional server/
storage, software, inventory management, enterprise systems software, and more. The world of operational technology (OT)
is typically associated with supervisory monitoring and control in enterprise and industrial environments.
These two worlds are converging. The convergence is being brought about by the rapid acceleration in the deployment of theInternet of Things (IoT), Industrial IoT (IIoT), artificial intelligence, and other emerging technologies that are requiring the broad
integration of compute/storage/networking at the edge with big data analytics.
Historically, IT usage called for enterprise/client solid state drives (SSDs) while OT applications typically required industrial SSDs.
The convergence of IT and OT is leading to the generation ofdata at unprecedented volumes, requiring suitable storage
solutions that enable the processing and transformation ofdata into actionable insight. This has given rise to Edge
computing, where storage and compute resources arecloser to the source, in contrast to centralized repositories
like data centers.

IT

IT/OT
CONVERGENCE

encompasses the managementof data, computer systems,
and communication networks tofacilitate information processing
and sharing.

OT

refers to technology used inindustrial and infrastructure
systems to monitor andcontrol physical processes,
machinery, and equipment.

The Rise of Data at the Edge and the Emergence of SSDs as Vital Components
As data generation continues to accelerate, compute resources are moving to the edge, closer to the source of data instead of incontrolled environments such as data centers. Amidst this evolution, SSDs are becoming the de facto storage media of choice asorganizations maximize computing power on edge servers due to SSDs’ advantages, such as:• A range of suitable capacity points• High performance• Low latency• High endurance• Environmental ruggedness• Intelligent thermal management• Ideal form factors commonly designed for "boot drive,""storage drive," and hybrid usage under mainstream x86 systems• They are capable of handling enterprise operational workloads aswell as endurance and reliability requirements while working inharsher environmental conditions for extended periods
without supervision.

Neither Traditional Industrial nor Enterprise SSDs
Perfectly Fit the Needs of Edge Computing
Edge computing offers reduced latency, better cost-effectiveness, real-time analytics, and the convenience of offline accessibility
where network availability may be limited. However, IT and OT convergence requires a multitude of different systems, applications,and use cases; hence, a comprehensive storage solution is needed to hurdle these challenges.

9ATP Enterprise-Readiness Standards:
Ensuring SSD Reliability in Edge Computing Systems
ATP Electronics makes sure that its flash storage solutions function reliably and have a long product lifetime
with high-quality service. The following summarizes the scope of ATP’s Enterprise Readiness Standards (ERS),
including stringent testing and enhanced firmware features.

Product images and labels are for reference only and may differ from the actual products.

10Media/NAND Level Testing

Enhanced Power Consumption TestingPower Cycle Testing

Enhanced FW Features

Aims to characterize NAND behavior and reliability
with NAND error-handling mechanisms.

Includes characterizing the power consumption of
SSDs under different workloads, which is not limited
to only the maximum and average measurements
under a single worst-case scenario.

Validates the design of the power loss protection (PLP)
mechanism under sudden power-off conditions.

Describes firmware features validated by ATP’s
stringent testing for storage solutions for
Embedded Computing Systems.
The following enhanced firmware features ensure the stability, reliability,and functionality of storage products built for the industrial enterprise.

Enhanced Performance Testing

Thermal Characterization & Testing

Operating Temperature Cycling Test

Tests the SSD’s performance with various workloads,
a mix of read and write operations, and sequential/
random addressing.

Includes testing the SSD’s thermal throttling behavior
at various ambient operating temperatures and withvarious airflow settings.

Operating temperature and input voltage can impact
SSD functionality. Four-corner testing validates thepower cycling reliability and operational functionality of
the SSD using a combination of different variants in four
quadrants: High/low operating temperature andhigh/low input voltage.

• Download Microcode Capability• Enhanced Read Disturb Resilience• Flush Cache Command Bypass• Multiple Thermal Throttling Stages• Optimized Flush Cache Timing for Sudden Power Loss Data Protection• PLP Capacitor Health Check• SMART ID Customization• Steady Write Latency Tuning

11

Industrial Enterprise Product Line (Coming Soon)A New Era of SSDs is Born from ATP’s Enterprise Readiness Standards
As a testament to ATP storage products meeting these requirements,
over 70% of companies listed on Gartner’s Magic Quadrant report for Primary Storage,
Data Center and Cloud Computing, and WAN-Edge Infrastructure consider
ATP as a strategic supplier and have integrated ATP SSDs into their infrastructure.

N651Sie / N651Sce

Product LineInterface

Gen4 x4

Form Factor

M.2

U.2

E1.S

Dimensions (mm)80 x 22 x 3.85

100 x 69.85 x 15

118.75 x 33.75 x 9.5

Flash TypeTLC

Capacity

120 GB to 960 GB

Sequential Read (up to) 1,6,7

6,450 MB/s

6,000 MB/s

6,100 MB/s

Sequential Write (up to) 1,6,7

6,050 MB/s

5,500 MB/s

6,000 MB/s

Random Read (up to) 2,6,7

1,100 KIOPS

820 KIOPS

Random Write (up to) 2,6,7

1,250 KIOPS

480 GB to 3.84 TB

Sustained Sequential Write (up to) 3,6,7

3,000 MB/s

3,200 MB/s

Sustained Random Write (up to) 4,6,7

250 KIOPS (1,000 MB/s)

320 KIOPS (1,280 MB/s)

Endurance [DWPD] 8
QoS 99.9999%5,6,7>2.5
Read <90µs | Write <10µs

Read <80µs | Write <10µs

Read <80µs | Write <10µs

5 years (10% P/E cycle) @ 30°C

Data Retention
Power Loss Protection

Yes

End to End Data Path Protection

Yes

Sustained Read Power (Max) 7<9W<14.5W<13W

Sustained Write Power (Max) 7<11.5W<17.5W<15.5W

Supply Voltage

3.3V

Operating Temperature Tc

12V-40°C to 85°C (I-Temp) | 0°C to 70°C (C-Temp)

Storage Temperature Tc-40°C to 85°C

Vibration

Sine 16.4G,10~2,000Hz

Shock

Half sine 1,500G/0.5ms

MTBF @ 25°C

2,000,000 hours

UBER

1 sector per 10^17 bits read

Warranty

5 years

Notes:
1. Sequential Burst Performance tested with IOmeter 4MB, QD64
2. Random Burst Performance tested with IOmeter 4KB, QD64
3. Average Sustained Sequential Write Performance tested with IOmeter, 4MB, QD64 for 30 minutes
4. Average Sustained Random Write Performance tested with IOmeter, 4KB, QD64 for 30 minutes
5. 4KB Random QD=1
6. Actual performance may vary depending on user conditions and system environment
7. Parameters tested with highest capacity drive
8. DWPD for 5 years tested with JESD219A Enterprise workload

12

870 KIOPS
1,200 KIOPS

Automotive Megatrends and the Migration of E/E architecture
The automotive industry's innovation, known as C.A.S.E., is fueled by the growing demand for Connected, Autonomous,
Secured/Shared, and Electric vehicles.

ConnectedAutonomousSEecuredhared

lectric

Domain/Centralized & Zonal E/E architecture:
Zonal
Gateway

Zonal
Gateway

By 2030, electric cars are projected to make up at least one-third of total vehicle
sales (Deloitte). The architecture moves from distributed ECU to Domain andcentralized/Zonal design to reduce cable lengths for cost-saving.

CentralBrainsThis shift is driving the replacement of small control units with a few powerfulvehicle computing systems. This surge in technology is revolutionizing NAND
storage devices.

Zonal
Gateway

Zonal
Gateway

Smart Cockpit / Enriched Cabin = More Data
Integrating ADAS with the infotainment system enhances user experience,
offering entertainment or productive meetings on up to 12 4K displays withApple Carplay and Android Auto support. The domain gateway manages OTA(over-the-air) software updates, traffic monitoring, and maintenance data uploads.

The C.A.S.E. Challenges for Automakers
Stable supply and Longevity• Legacy architectures are decreasing but not expected to be eliminated in thenext five years.

• Traditional Internal Combustion Engine (ICE) cars usually last around 15 years.
• Semiconductor suppliers may stop producing legacy parts during the NAND
process migration.

•Sourcing suitable longevity successors meeting automotive qualifications
may become challenging.
• Diverse storage suppliers’ sourcing strategies are crucial to address
this uncertainty.

Share vehicle production volume

By 2025, Micron anticipates a fourfold increase in NAND (1TB) per car compared
to 2021, enabling a high-density SSD supporting the domain gateway alongside
eMMC, UFS, and UFD with diverse functions.

2024

2025

Traditional E/E

2026

2027

Domain Centralized

2028

2029

Vehicle Centralized

Source: Bosch-Mobility

13

The C.A.S.E. Challenges for Automakers
Saving power = Saving cost
Batteries make up 30-40% of an electric vehicle's cost. Automakers are now prioritizing extending battery lifeand reducing consumption.
Advances in batteries and management systems are critical, with efficient power usage and thermal
management in NAND storage playing a key role without compromising overall efficiency and quality.

Why work with ATP ?
ATP Qualification and Services:•15+ years of automotive experience• IATF 16949• VDA 6.3
• AEC-Q100 and AEC-Q104 test1• Thermal management solution2• Content preload and Encryption by project support• Joint development and validation

ATP Product lineup and Features for Automotive•Extended Longevity with high-quality NAND Flash• Industrial temp. grade 3 (-40°C/85°C) and grade 2 (-40°C/105°C)• pSLC configuration offering• Power Loss Protector (Hardware, Firmware)• Read Disturb, Data Retention Protector• Content preload and Encryption by project support• Error handling and recovery mechanism• Health Monitoring Report with S.M.A.R.T. available
SSD series:
E1.S, BGA SSD, U.2, M.2

Legacy support:
SD/microSD

Across E/E
architecture:
eMMC

1 Selected*
2 Customized FW & and features support by selected BOMs. To learn more about ATP’s Thermal Management Solution ,please refer to pages 15 to 17 for more details.

14

THERMAL

ATP Customizable �Thermal Management Solutions:
Steady Wins the Race
In this increasingly data-centric era, industrial applications are constantly generating data requiring storage and quick access;however, we are in a constant race not only against time, but also against heat.
NVMe solid state drives (SSDs) deliver blazing-fast performance, running at four to six times the speed of Serial ATA (SATA), but their
blistering speeds, exacerbated by extreme temperature variations and constricted embedded environments with little to no
ventilation, can lead to heating issues that can compromise the stability of the storage device

While most of the storage world is saying, “The faster the better,” ATP is taking the “Steady wins the race” stance, ensuring thatblazing fast does not turn to blazing hot. The ATP approach to thermal management may be likened to running a marathon.
We consider the following steps:

Match toCustomerCriteria

8.3 mm ± 0.2

Mechanical
Design for Heat
Dissipation
MAX 3.9 mm

Solution forEnvironment &Workload

STEP 3: CUSTOMIZATION

Copper Foil Heatsink

4 mm Fin-Type Heatsink

8 mm Fin-Type Heatsink

STEP 4: OPTIMIZATION

Performance

STEP 2: SIMULATION

12.3 mm ± 0.2

STEP 1: ASSESSMENT

ATP Thermal Management Solutions

Standard Heatsink Solutions
Time

15

STEP 1: ASSESSMENT

How can NVMe SSDs beat the heat?
Each customer faces a unique thermal challenge, which could be an interplay of all the factors mentioned below:• System/mechanical criteria• User applications• System specifications including, but not limited to:• Temperature• Airflow• Mechanical design• Workload and performance requirement

Area BH2

M.2 2280 PCB
M.2
SocketArea A

H1

Screw
Hole

SYSTEM PCB

M.2 Socket

M.2 2280 PCB
W1SYSTEM PCB
W2

Screw

STEP 2: SIMULATION

Comprehensive Thermal Simulation coverage
ATP utilizes a thorough thermal simulation strategy beginning with the design phase. ATP addresses various facets such ascomponent and mechanical considerations, firmware evaluations, environmental testing for drives, and ultimately simulating
thermal environments with mini-chamber tailored to meet customers' specifications.

Full Coverage of Thermal Simulation Test

Mechanical
Design Phase

Firmware &S.M.A.R.T. Tool

Drive (SSD)
Environment
Test• IR Drop Simulation• Power Drop Simulation• Temperature Distribution• Optimized PCB layout andComponent placement• Improve Signal Integrity• NAND Flash IC Validation• Mechanical Thermal
Simulation• Predict airflow, temperature,and heat transfer in IC
packages, PCBs, electronic
assemblies/heatsinks/
enclosures, andpower electronics.

• Firmware to optimize
performance based on thetemperature reported from
Thermal sensors andmicrocontroller unit (MCU)• Thermal-related FW Error
handling and Recovery• Temp. information isavailable via S.M.A.R.T. tool

• ATP-built mini chamber• Simulate real test environment• Adjustable ambient
temperature, airflow, andSSD setting• Log files of Performance,
power consumption, and
S.M.A.R.T. info.

Performance

Component
Design Phase

cadenceStandard Heatsink Solutions
Time

Ansys Icepak

16

ATP Thermal Management Solutions

STEP 3: CUSTOMIZATIONOne Scenario Does Not Fit All

We adopt a collaborative approach with our customers, focusing on a 'we build with you' philosophy through joint development efforts.
Our commitment to optimizing heat dissipation involves a continuous evaluation of our mechanical designs. This includes examining
materials, appearance, airflow, and assembly processes to ensure optimal thermal management. Below is a table detailing themechanical solutions we offer, such as heatsinks, housings, and enclosures.

Heat Dissipation Solutions

Form Factor
supported

M.2 2280

U.2

E1.S

Type

Copper Foil

4 mm Fin-Type
Heatsink

8 mm Fin-Type
Heatsink

15 mm Fin-Type
Housing

9.5 mm Symmetric
Enclosure

Dimensions:
L x W x H (mm)80 x 22 x 3.9

80 x 24.4 x 8.3

80 x 24.4 x 12.3

100.5 x 69.85 x 15 118.75 x 33.75 x 9.5

Material

CopperUpper: Aluminum alloy Upper: Aluminum alloy Aluminum alloy
Bottom: Stainless steel Bottom: Stainless steel

Suitability

Limited space

Fixedness

Stick

Aluminum alloy

Enough space for effective heat dissipation
Clips design

ScrewedScrewed

STEP 4: OPTIMIZATION
Steady Wins the Race

The ATP Dynamic Thermal Throttling utilizes firmware to prevent excessive temperature rise by continuously monitoring device
temperature. This mechanism triggers Eco Mode, balancing performance and temperature, leading to lower power consumption.
The accompanying figure demonstrates a significant reduction in power consumption under Eco Mode.
Power Consumption (Watts)
Max
Avg
Eco Mode

Min

Power Mode (full speed)

As the composite temperature rises, the SSD consistently slows down to cool, aided by an 8 mm heatsink and airflow support.
This results in a lowered maximum composite temperature for the NVMe SSD, ensuring steady performance with an optimized
firmware algorithm.
Composite Temperature

˚C

MB/s

Time

Bare SSD

PerformanceTime

8 mm Heatsink

17

ENDURANCE
N651/N601 Series Industrial 176-Layer
PCIe® Gen4 x4 M.2 2280, U.2 SSDs
Offer High-Endurance 5K+ P/E Cycles,
Robust Cross Temp Integrity, 7.68 TB Max. Capacity

The latest high-speed N651/N601 Series M.2 2280 and U.2 SSDs sport the PCIe® Gen4 x4 interface to deliver faster datatransfer rates.
The N651/N601 Series SSDs offer a remarkable 5,000+ program/erase (P/E) cycles endurance and cross temperature integrity
with low bit errors even when operating in varying read/write temperatures. This integrity is maintained even beyond theirrated endurance, thanks to ATP’s error handling technology.
Built on 176-layer 3D triple-level cell (TLC) NAND flash and using prime 512 Gbit die package, the N651/N601 Series SSDs offer
performance as well as price improvements over the 64-layer technology.
The M.2 2280 SSDs are available in capacities from 240 GB up to 3.84 TB, while the U.2 SSDs are available from 960 GB to
7.68 TB (native TLC) and 320 GB to 2.56 TB (pSLC mode).
They are suitable for both read/write-intensive, mission-critical industrial applications such as networking/server, 5G,
data logging, surveillance, and imaging, with performance on par, if not better, than mainstream PCIe Gen4 consumer SSDs
in the market.

PCIe® Gen4 NVMe M.2 2280 SSD

18

Feature Highlights

PCIe® Gen4 NVMe U.2 SSD

Feature Highlights• Capacities• 240 GB to 3.84 TB• Operating Temp
• I-Temp (-40°C to 85°C): N651Si• C-Temp (0°C to 70°C): N651Sc/N601Sc• Thermal Management for Optimal Heat Dissipation• Nickel-coated copper heat spreader on controller• 4 mm or 8 mm fin-type heatsink design• Security• AES 256-bit encryption• TCG Opal 2.0• Data Integrity• End-to-End data path protection• Performance• Sequential Read/Write up to 6,450/6,050 MB/s

• Capacities• 960 GB to 7.68 TB (TLC mode)• 320 GB to 2.56 TB (pSLC mode)• Operating Temp
• I-Temp (-40°C to 85°C): N651Si• C-Temp (0°C to 70°C): N601Sc• Thermal Management for Optimal Heat Dissipation• 15 mm fin-type heatsink design• Security• AES 256-bit encryption• TCG Opal 2.0• Data Integrity• End-to-End data path protection• Performance• Sequential Read/Write up to 6,100/6,000 MB/s
• Hot-swappable

Please refer to page 37 for product specifications.

Please refer to page 39 for product specifications.

E1.S PCIe Gen4 x4 SSD (Coming Soon)

New Form Factor Offers Hot-Swap/Hot-Plug Support,
Better Power and Thermal Efficiency, Higher Densities

Built with 176-layer NAND and boasting an impressive 5,000+ program/erase (P/E) cycle endurance, ATP's E1.S SSDs aredesigned for optimal performance leveraging cutting-edge PCIe® interface and NVMe protocol technologies.
Engineered for 1U Edge servers, ATP's E1.S SSDs are designed for vertical placement in small-footprint systems, allowing up to
6 to 12 drives in a 1U chassis. They support hot swapping/hot plugging for easy serviceability and replacement of drives while
the system is on.
High cross-temperature reliability translates to low bit errors and better transmission accuracy for higher data integrity.
Housed in a 9.5 mm symmetric enclosure, ATP’s E1.S SSDs are a result of thermal management solutions*. The enclosure
features customized hardware and sustained performance firmware tuning, making it an ideal solution to meet the demanding
requirements of hyperscale architecture.

PCIe® Gen4 NVMe E1.S SSD

Feature Highlights• E1.S 9.5 mm symmetric enclosure• PCIe Gen4 x4 interface• From 960 GB to 8 TB storage capacity• Industrial temperature operable• Thermal Management Solution*• Hardware PLP• Hot-pluggable/Hot-swappable*To learn more about ATP’s Thermal Management Solution ,please refer to pages 15 to 17 for more details.

19

A750/A650, N750/N650 Series:
New-Generation 3D TLC SSDs Deliver Near-SLC/MLC Endurance
Endurance suited for write-intensive workloads:
66% higher native TLC endurance; surpasses with 100K+ P/E cycles in pSLC

Manufactured using a new die package, the new-generation 3D TLC SATA and NVMe embedded SSDs are breaking endurance records.
The SATA A750 and A650 Series are available in M.2 2280/2242, 2.5” and mSATA form factors, while the N750 and N650 Series
support the NVMe 1.3 protocol with PCIe Gen3 x4 interface and are available as M.2 2280 modules.
The following graph shows that compared with other industrial native 3D TLC SSDs, the A/N650 Series has significantly increased
endurance by 66%, while the A/N750 Series with 100,000+ P/E cycles outperforms its pSLC-configured counterparts.
P/E Cycles
Native TLC

pSLC mode
100,000+
100,000

100k

66% Higher Endurance
5,000+
3,000
5k
3k
Other SSDs ATP 650 SSDs

A750/A650 Series

20

Feature Highlights

Other SSDs ATP 750 SSDs

N750/N650 Series

Feature Highlights• SATA III 6 Gb/s interface• Available in M.2 2280/2242, 2.5” and mSATA form factors• A750 model with 100,000+ P/E cycles;
A650 model with 5,000+ P/E cycles• Operating Temp
• I-Temp (-40°C to 85°C): A750Pi /A650Si• C-Temp (0°C to 70°C): A650Sc• PCIe Gen3 x4 interface• Available in M.2 2280 form factor• N750 model with 100,000+ P/E cycles;
N650 model with 5,000+ P/E cycles• Operating Temp
• I-Temp (-40°C to 85°C): N750Pi /N650Si• C-Temp (0°C to 70°C): N650Sc

Please refer to page 41, 42, 43
for product specifications

Please refer to page 38 for product specifications

S650Si/S750Pi Series High-Endurance 512 GB Max. Capacity
SD/microSD Cards for Reliable Video Recording
in AI Surveillance Infrastructures

The S650Si/S750Pi Series SD and microSD memory cards built with 176-layer 3D NAND technology and low-density parity check(LDPC) controller are targeted for growing segments spurred by 5G, artificial intelligence (AI), and edge technologies, such as AI-enabled
surveillance, smart homes, mobile monitoring, automotive recorders, remote healthcare, and security surveillance systems requiring
heavy write and re-write usage.
Compared with previous-generation ATP SD/microSD offerings, the new memory cards offer 3X faster sequential write and better
sustained writing performance.
These memory cards offer high endurance and stable latency for consistent performance even after long-term writing, ensuring
good-quality continuous video recording. Their outstanding cross-temperature reliability enables them to withstand fluctuating
temperatures to ensure total device dependability in a wide range of operating conditions.
They are available in two configurations:• Native Triple Level Cell (TLC): S650Si with capacities from 64 GB to 512 GB, endurance of 5K+ P/E cycles,
and Terabytes Written (TBW) of up to 1,400 TB.
• Pseudo Single Level Cell (pSLC): S750Pi with capacities from 16 GB to 128 GB, endurance of 100K+ P/E cycles,
and TBW of up to 10,160 TB.

S650/S750 Series• Capacities• S650Si Series: 64 GB to 512 GB (native TLC)
• S750Pi Series: 16 GB to 128 GB (pSLC mode)• Operating Temp
• I-Temp (-40 to 85°C)• Endurance• S650Si Series: 1,400 TB• S750Pi Series: 10,160 TB• Supply Longevity Support: 5 years• Joint Validation Service

Feature Highlights• ATP own-developed firmware• ATP SD Life Monitor: Intelligent Workload Inspection• Error Recovery Algorithm: Read Retry, Auto Read Calibration• Back-up Mechanism and Sudden Power Off Recovery• ATP own-developed advanced card analysis for
System-in-Package SiP design• ATP-Developed Hardware Design - Substrate with reserved testing pin
is available for future component analysis.
• Solder Mask Removal by Laser – Precise and efficient method to
remove the solder mask to reach the reserved testing pins on
the substrate.
• ATP’s Own Customized Debug Tool - This is connected to the Hardware
reserved testing pin and then linked to the Software analysis system.

Please refer to page 47, 48 for product specifications

21

N651Si/N601Sc Series Type B CFexpress Cards,
B600Sc Series NANODURA Dual UFDs Deliver High-Speed
Data Transfers and Secure Storage with Write Protection Feature

ATP N651Si/N601Sc Series CFexpress Type B memory cards
are the latest generation of CompactFlash (CF). Using the
PCIe 4.0 x2 interface, they deliver more superior, high-speed
performance compared with other cards using the
PCIe 3.0 x2 interface.
ATP N651Si/N601Sc Series CFexpress Type B memory cards
come with an optional hardware write protect feature.
TCG Opal 2.0-compliant encryption/decryption secures datafrom theft and tampering without performance degradation.

ATP B600Sc Series NANODURA Dual universal flash drives(UFDs) are compliant with the Superspeed USB 3.2 Gen 1
specifications and can transfer data at speeds up to 5 Gb/s
– a huge leap from USB 2.0 transfer speed of 480 Mb/s.
ATP B600Sc Series NANODURA Dual UFDs come with ahardware and firmware solution that integrates Write
Protect Commands into software tools for easy access andimproved user interface.
• The system supports .dll and Command Prompt Commands(CMD) guidelines for customer software development.
• ATP provides its proprietary Windows tool for the convenient
locking/unlocking of the device.

N651Si/N601 Series CFexpress Type B Feature Highlights

B600Sc Series NANODURA Dual

• Capacities• 128 GB to 1 TB
• Operating Temp:• I-Temp (-40 to 85°C): N651Si• C-Temp (0 to 70°C): N601Sc• Endurance• Up to 1,000 TB• Host Memory Buffer (HMB) support• Security• TCG Opal 2.0• HW Write Protection (optional)• RAID 0, 1 compatibility• Form Factor: USB flash drive (USB 3.2) Gen1,
backward compatible with USB 2.0• Connector Types:• USB Type A• USB Type A/Type C Dual Connectors (optional)• Capacities: 32 GB to 128 GB• Operating Temp: C-Temp (0 to 70°C)• Endurance: Up to 84 TB• True Plug and Play connection, supports hot swap function• HW/FW Write Protection

Please refer to page 49
for product specifications

Please refer to page 44 for product specifications

22

Feature Highlights

DRAM-less Value Line SSDs

Available in I-Temp/C-Temp Operable Models

Please refer to page 38, 41, 42, 43 for product specifications.

N600Vi/Vc Series M.2 2242/2280 PCIe Gen3 NVMe and A600Vi/Vc Series SATA 2.5”, M.2 2242/2280, and mSATA Value Linesolid state drives (SSDs) are built with prime die triple-level cell (TLC) NAND on leading 176-layer 3D architecture.
Value line SSDs are geared toward industrial/embedded applications requiring reliable performance, a wide range of capacity
options, and long-term supply commitment at friendly price points. The DRAM-less configuration provides lower power
consumption and less heat signature.
The Value Line is tailored for read-intensive or general R/W mixed applications, such as web servers, box PCs,
kiosk/point-of-sale systems (POS), and other industrial/embedded boot drives requiring reliability and lower cost of investment.

Why Value Line SSDs ?
Great cost-per-GB value for read-intensive
and write-moderate applications

Pricing• Industry-leading NAND
screening capability• ISO 9001, ISO 14001• Wafer-to-finished productprocess ownership• Traceability to the production line
• In-house testing/quality process

Quality,
Reliability

Service• Comprehensive pre-qualification
to post-production failure analysis
service support• 5-year supply longevity support

True Manufacturer,
Full Process Ownership23

N600Vi/Vc Series

A600Vi/Vc Series

Feature Highlights

•
•
•
•
•

SATA III 6 Gb/s
Available in M.2 2280/2242, 2.5” & mSATA
128 GB to 1 TB capacity
I-Temp/C-Temp operable
Firmware-based Power Loss Protection
with Level 3 data-at-rest protection• Power-efficient DRAM-less design

•
•
•
•
•

PCIe Gen3 x4, NVMe 1.3
Available in M.2 2280/2242
120 GB to 960 GB capacity
I-Temp/C-Temp operable
Firmware-based Power Loss Protection
with Level 3 data-at-rest protection• Host Memory Buffer (HMB) support• End-to-end data path protection

Value

Product Line

A600Vi / A600Vc

N600Vi / N600Vc

Interface

SATA III 6 Gb/s

PCIe G3 x4Flash TypeForm Factor
Operating Temperature

Feature Highlights

3D TLC
M.2 2280 S2-M

2.5"

M.2 2242 D5-M

M.2 2280 S2-B-M M.2 2242 D2-B-M-40°C to 85°C / 0°C to 70°C

MO-300A-40°C to 85°C / 0°C to 70°C

Power Loss Protection Options

Firmware Based

Optional SED Features-

Capacity

32 GB to 1TB

120 GB to 960 GB
Performance

560

Sequential Read (MB/s) up to

2,600

Sequential Write (MB/s) up to

1,870

Random Reads IOPS up to184,300

72,00070,50072,000Random Writes IOPS up to145,900

85,00081,00085,00042 x 22 x 3.5

50.8 x 29.85 x 3.5

525Endurance and Reliability
Endurance (TBW)1 up to

2,792 TB

2,880 TB

Reliability MTBF @ 25°C (hours)>2,000,000 hours
OthersDimensions (mm)Certifications
Warranty
1

2480.0 x 22.0 x 2.2

42.0 x 22.0 x 3.6

100 x 69.85 x 7

CE, FCC, BSMI, UKCA, RoHS, REACH

Under highest Sequential write value. May vary by density, configuration and applications.

2 years

80 x 22 x 2.2

ATP’s DDR5 Memory Feeds the Need for Speed,
Higher Density, and Lower Power

Please refer to page 30 for product specifications.

ATP introduces DDR5, the next-generation DRAM specification memory that brings several significant improvements and advantages
over its previous memory generation, DDR4.

2X the Speed

Up to 128 Gb Density with 4-Layer TSV

ATP DDR5 DIMMs debut with 4800/5600 MT/s
memory bandwidth, which supersede DDR4’s
maximum speed of 3200 MT/s. DDR5 is
expected to scale up to 6400 MT/s channel
speed, thus doubling DDR4’s and translating tooverall higher performance.

While DDR4 maxed out at 16 Gb in a single die
package (SDP), a single DDR5 DRAM die package
has up to 32 Gb.

Lower Power Consumption

Better Power Architecture with PMIC

From DDR4’s 1.2V, DDR5 operating voltage
is a mere 1.1V, resulting in lower power
consumption and more energy savings.

DDR5 features a new power architecture that moves
power management from the motherboard to theDIMM. An on-board Power Management Integrated
Circuit (PMIC) regulates power for better distribution
and signal integrity while reducing noise.

Precise Temperature Control
Targeted for DDR5 Registered DIMMs (RDIMMs),a temperature sensor on the DIMM provides
accurate and real-time temperature monitoring
and control.

Other Key Enhancements Over DDR4
• On-Die ECC detects and corrects errors before data is sent to the CPU.
• Dual Subchannels on a DIMM. Two 40-bit-wide channels (32 data bits and 8 ECC bits) improve memory access.
• Burst length of 16. Having twice the burst length of DDR4, DDR5 can access 64 Bytes of data with a single burst and using
just one of two independent channels (half a DIMM), translating to better efficiency.
• Dual Data Rate (DDR) on command and address interface, as opposed to Single Data Rate (SDR) on command and addressinterface with DDR4, have freed up additional pins for isolation enhancements.

25

DRAM Solutions
Intense Performance for Intense Workloads

ATP’s industrial DRAM modules are built tough and can meet the exacting demands of the growing enterprise. On call 24/7,
these hardworking modules are fast, can withstand harsh operating environments, and can handle large bandwidth
requirements. ATP’s DRAM lineup consists of legacy SDRAM, and a complete range of DDR1, DDR2, DDR3, DDR4,
and DDR5 modules. They are available as RDIMM, RDIMM VLP, UDIMM/UDIMM ECC, SO-DIMM/SO-DIMM ECC, Mini-RDIMM,
and Mini-UDIMM/Mini-UDIMM ECC.

26

DRAM Modules

Multi-Generational Accelerated Computing

ATP DRAM modules meet the growing need for accelerated
performance in memory-intensive and high-performancecomputing applications to keep up with intensifying dataprocessing requirements as the Internet of Things (IoT) andindustrial IoT (IIoT) inevitably become more pervasive.
Multi-generational solutions range from legacy DDR3/
DDR2/DDR1, DDR4, and the latest DDR5 solutions, which
deliver robust performance, durable build, and the rightdensity for the toughest workloads. ATP's modules consistof major integrated circuits (ICs) exclusively obtained from
100% Tier 1 manufacturers, eliminating reliance on spot
market sources.

The ATP Advantage: WE BUILD WITH YOU*
Value-Added Customization Services*• Conformal Coating makes the DRAM module totally
pinhole-free and truly conformal, shielding it from dust,
chemicals, moisture, and other harmful substances.
• Chamfering PCB Design refers to the “beveling or tapering”
of connector edges for easier insertion into the memory slots.
• Anti-Sulfur Resistors Ordinary silver resistors corrode andbecome non-conductive when exposed to sulfur. ATP DRAM
modules products offer an anti-sulfur resistor option to preventthe corrosive effects of sulfur contamination, guaranteeing
continued dependable performance for a long time andlowering the total cost of ownership by preventing unnecessary
downtime and expensive component replacements.
Best TCO with Wide-Temp ICs
Wide-temperature ICs supporting -40°C to 85°C operating
range offer the best solution to reach industrial grade
performance at a lower cost.
Longevity Support for Legacy Modules
Under the Product Longevity Program, a partnershipagreement with Micron Technology, Inc., ATP will continue tomanufacture legacy SDR/DDR/DDR2 DRAM modules for
Micron’s customers that are unable to migrate, including
selected legacy DRAM modules specifically for customers
using AMD Embedded Geode platforms
System-Level TDBI Screens Out 0.01% Error
Even just 0.01% error on a 99.99% effective device canincrease the failure rates at the module level and lead to
failure in actual usage. ATP's system-level TDBI can detectand screen out the 0.01% error to ensure utmost reliability.
* Features and services may vary depending on project and customer request.

27

ATP DRAM Modules: Tested Rigorously for Maximum Reliability
Dynamic Random Access Memory (DRAM) modules perform critical tasks for rigid workloads. Many of them are installed in systems
that work non-stop in high-stress environments. They are constantly exposed to thermal, environmental as well as electro-mechanicalchallenges. Knowing that any vulnerability that can cause unstable system operation can also drastically impact business operations,
ATP goes through extra lengths to make sure that its DRAM modules are extremely reliable.

Automatic Test Equipment (ATE)The ATE detects component defects and structural defects related to the DIMM
assembly and screens out marginal timing and signal integrity (SI) sensitivities.
ATE provides electrical testing patterns with various parameter settings, such as
marginal voltage, signal frequency, clock, command timing and data timing
under continuous thermal cycle.

Test During Burn-in (TDBI)• TDBI at mass production level detects early life failures (ELF) and effectively screens out weak ICs that could fail during the early
product life. It combines temperature, load, speed and time to stress test memory modules and expose the weak module.
• Even just 0.01% error on a 99.99% effective device can increase the failure �rates at module level and lead to failure in actual usage.
• ATP TDBI can detect and screen out the 0.01% error to ensure utmost reliability.

Temperature
Load

ATP DRAM Modules

Speed

Memory Modules
Time

28

Weak Module

ATP TDBI: What Makes It Unique?
The ATP TDBI system applies extreme high/low temperature, high-low voltage, and pattern testing on DRAM modules.
The system consists of:

The Mini Chamber
Isolates temperature cycling only to modules being tested so as not tothermally stress the rest of testing systems. This minimizes the failure ofother testing components, such as the motherboards. It also allows fasterdebug for defects per million (DPM) fallout and reduced false failures. In
conventional large thermal chambers, the failures of non-DRAM-related
testing components are constant, given that the whole system isthermally stressed.

Module Riser Adapters from the Motherboard
Allow easy module insertions in production-level volumes.

Improvements After TDBI Adoption
The following graph shows that with ATP TDBI, the error rates decrease over time. The acceptable industry limit is3,500 DPPM,* but with ATP TDBI, the error rate has gone down significantly over the years.
DPPM* Summary
3500

3202

3000
2500
2000

1955

1500
1000
500

1297
948
757

651

520

445

407

377

346

331

0
*DPPM = Defective Parts per Million

29

DDR5: Built to Meet Ever-Growing Memory Needs with 2X
the Speed, 4X the Capacity and Greater Power Efficiency
Up to

51 GB/sMemory Bandwidth

4800 to 6400 MT/s

Frequency / Transfer Rate

Up to

128 GbMemory Density

1.1 v

Operating Voltage

ATP’s DDR5 solutions are expected to deliver performance and reliability improvements over the previous generation, especially for criticalcomputing applications.
As the next-generation DRAM specification, DDR5 is poised to exceed DDR4 in every way. DDR5 promises faster performance, higher
memory bandwidth, higher densities, and a new power management structure that delivers better power efficiency.
All of these advantages, and more, are expected to meet the ever-growing memory needs of present and future applications. Both DDR4
and DDR5 dual-inline memory modules (DIMMs) still have 288 pins, but with DDR5’s higher bandwidth, this means it can transmit data
faster. While the pin count is the same, DDR5 DIMMs will not fit in DDR4 sockets as the alignment key is located differently and thepinouts have been changed to accommodate the new features.
For more information on DDR5 and its advantages over DDR4, please go to page 25.

DDR5
DIMM TypeRDIMM

ECC UDIMM

Non-ECC UDIMM

ECC SO-DIMM

Non-ECC SO-DIMM

Density

16 GB to 256 GB

16 GB to 64 GB

8 GB to 64 GB

16 GB to 64 GB

8 GB to 64 GB

Speed up to (MT/s)

4800/5600

4800/5600

4800/5600

4800/5600

4800/5600

PCB Height*

Low profile / VLP*

Low profile / VLP*

Low profile

Low profile

Low profile

Operating Temperature* VLP: 0.74"

30

0°C to 85°C / -40°C to 85°C

Why Wide-Temp Modules?
DRAM modules are typically installed in systems that operate in harsh environments
and extreme temperatures that fluctuate during daytime and the nighttime, as well as
in varying weather conditions; thus, memory with a broader range of temperaturecapabilities is becoming more necessary as most edge computing applications run 24/7,
often in challenging environments.
ATP offers industrial grade wide-temp DRAM modules to ensure better endurance andredundancy in critical environments where commercial-grade DRAMs do not suffice.

Benefits of ATP’s Wide-Temp Modules

100%

Lifetime-40°C to 85°C

UTMOST RELIABILITY

Operating Temperature range

ATP’s Test-During-Burn-In (TDBI) can detectand screen out 0.01% error to ensure utmost reliability.

Major ICs sourced fromTier 1 Manufacturers

Warranty** Warranty does not cover customized modifications made to the product after its sale.
A 3-year warranty is offered for specific modules, applicable to certain customers starting from the invoice date.

31

ATP Reaffirms Commitment to Long-Term Supply of Legacy DRAM Modules
ATP Meets Continued Demand for DDR3 Modules
With DDR4 as the current mainstream memory and companies preparing for DDR5, major memory makers are slowing down the
production of DDR3 or phasing it out. However, systems that have been running for a long time supporting DDR3 remain widelyin use for industrial, networking, and other embedded applications. Through its partnership with key suppliers, ATP is committed
to supporting the continued demand for DDR3 SO-DIMM and UDIMM in the next 3 to 5 years.

Product Information
Module Type

DDR3 SO-DIMM

DDR3 UDIMM

Capacity

4 GB / 8 GB

4 GB / 8 GB

Function

ECC/NON-ECC

ECC/NON-ECC

Frequency

1866 MHz

1866 MHz

Micron-ATP Partnership and License Agreements: DDR2 Continuity Program
With DDR2 still widely deployed in the US, Japan and Europe, ATP and Micron are making sure that these markets will have a steadysupply of Micron DDR2 SO-DIMMs and UDIMMs for industrial/embedded systems installedin high-reliability and mission-critical environments. All modules are manufactured, tested and validated by ATP, according to
the equivalent specifications and testing/validation processes of the respective Micron part number.
“Micron is dedicated to maximizing customers' infrastructure investments by ensuring prolonged support
for legacy systems and applications. Our proven partnership with ATP gives our customers the benefit ofreceiving similar Micron products and services to support their current platforms while ATP ensures thestability of their operations well into the future.”- Kris Baxter, Corporate Vice President and General Manager, Embedded Business Unit,
Micron Technology, Inc.

Legacy (SDR/DDR) DRAM Modules
The license agreement stipulates the following conditions for ATP:• 100% follow Micron’s design. Offer extended support for these legacy products to minimize the customer’s (re)qualification efforts.
• 100% follow Micron’s BOM selection. Implement the same specifications for key components (such as IC configuration and Register/
PLL type), as well as passive components (such as resistors, capacitors and EEPROM) to meet the specifications of Micron’s BOM.
• 100% follow Micron’s firmware settings. Implement SPD in addition to the manufacturer’s information.
• 100% follow Micron’s specifications. Each module will be manufactured to the equivalent specifications and test processesof the corresponding Micron part number.

Product Information
Module Type

Function

Frequency

Number of Pins

PCB HeightDDR SO-DIMM

Capacity
128 MB / 256 MB /512 MB / 1 GB

Unbuffered Non-ECC

400 MHz

200

1.25"

DDR SO-DIMM(Industrial Grade)

256 MB / 512 MB

Unbuffered Non-ECC

400 MHz

200

1.25"

Module TypeCapacity

DDR UDIMM

256 MB / 512 MB
64 MB / 128 MB /256 MBSDRAM SO-DIMM

32

Build To Order (BTO)
Function
Frequency

Number of Pins

PCB Height

Unbuffered Non ECC

400 MHz

184

1.25"

Unbuffered Non ECC

133 MHz144

1.0" / 1.25"

Complete DRAM Portfolio
DIMM TypeCapacity

Speed(MT/s, up to)

VLP/ULP*30µ” Golden
Finger

ATP TDBI

RDIMM

16 GB to 256 GB

4800/5600

●

●

●

▲

ECC UDIMM

16 GB to 64 GB

4800/5600●●●

Non-ECC UDIMM

8 GB to 64 GB

4800/5600-●

ECC SO-DIMM

16 GB to 64 GB

4800/5600-

Non-ECC SO-DIMM

8 GB to 64 GB

4800/5600

RDIMM

4 GB to128 GB

ECC UDIMM

Conformal
Coating

PCB Chamfer

▲

-

▲

▲

▲

▲

▲

●

▲

▲

▲

▲

●

●

▲

▲

▲

▲

-

●

●

▲

▲

▲

▲

3200

●

●

●

▲

▲

-

▲

4 GB to 32 GB

3200

●

●

●

▲

▲

▲

▲

Non-ECC UDIMM

2 GB to 32 GB

3200

●

●

●

▲

▲

▲

▲

ECC SO-DIMM

4 GB to 32 GB

3200

-

●

●

▲

▲

▲

▲

Non-ECC SO-DIMM

2 GB to 32 GB

3200

-

●

●

▲

▲

▲

▲

Mini-RDIMM

4 GB to 16 GB

2400

●

●

●

▲

▲

-

-

Mini-UDIMM

4 GB to 16 GB

2400

●

●

●

▲

▲

-

-

RDIMM

1 GB to 32 GB

1866

●

●

●

▲

▲

-

▲

ECC UDIMM

1 GB to 16 GB

1866

●

●

●

▲

▲

▲

▲

Non-ECC UDIMM

1 GB to 16 GB

1866

●

●

●

▲

▲

▲

▲

ECC SO-DIMM

1 GB to 16 GB

1866

●

●

●

▲

▲

▲

▲

Non-ECC SO-DIMM

1 GB to 16 GB

1866

-

●

●

▲

▲

▲

▲

Mini-RDIMM

1 GB to 8 GB

1600

●

●

●

▲

▲

-

-

Mini-UDIMM

1 GB to 8 GB

1600

●

●

●

▲

▲

-

-

ECC UDIMM

1 GB to 2 GB

800

-

●

●

▲

-

-

-

Non-ECC UDIMM

1 GB to 2 GB

800

-

●

●

▲

-

-

-

Non-ECC SO-DIMM

256 MB / 1 GB to 4 GB

800

-

●

●

▲

-

-

-

Non-ECC UDIMM

256 MB

400

-

●

●

-

-

-

-

400

-

●

●

▲

-

-

-

133

-

●

●

-

-

-

-

Product

DDR5

DDR4

DDR3

DDR2

DDR1

Non-ECC SO-DIMM 128 MB to 512 MB / 1 GB
SDRAM

Non-ECC SO-DIMM

64 MB to 256 MB

Wide
Anti-Sulfur
Temperature Resistors
S▲: Optional* VLP: height = 0.74"
ULP: height below 0.74"

33

Flash Solutions
Specialized Storage Solutions for Mission-Critical Applications
ATP’s industrial flash products deliver dependable performance, efficient responsiveness, and long usage life to accomplish
mission-critical tasks. Customizable* to customers’ configurations, they come in different form factors, such as U.2, 2.5” SSDs,
M.2 embedded modules, mSATA, CFexpress, CFast, CompactFlash, SD/microSD memory cards, USB drives, and E1.S drives (upcoming)for enterprise and industrial applications.
They support high-speed interfaces such as SATA 6 Gb/s and the latest NVMe™ protocol on PCIe® interface for reliable, blazing-fast,
and future-ready performance. Managed NAND offerings include the automotive/industrial grade e.MMC and NVMe HSBGA SSD,
which integrate flash memory and controller into a single package.
* By project support.

34

Solid State Drives and Modules

A New Breed of Storage Solutions for the Industrial Enterprise

As information technology (IT) and operational technology(OT) converge, relentless data generation is requiring a new
breed of data storage solutions. ATP SSDs and modules meetthe diverse and growing data storage needs of the industrial
enterprise. They are custom-configurable, offer enhanced
firmware, and undergo stringent reliability testing to ensure
reliable performance even at extreme temperatures(-40°C to 85°C) and sudden power loss events.
Four-Corner, Temperature Cycling, and Power Cycling are justsome of the reliability tests performed to guarantee that ATP
SSDs and modules deliver outstanding performance, rugged
durability, and many years of reliable performance. They
support the latest high-speed NVMe™ protocol on a
PCIe®Gen4 x4 interface as well as proven interfaces such as
SATA 6 Gb/s and USB. Various form factors include U.2, 2.5”
SSDs, M.2, mSATA, eUSB modules, and E1.S drives (upcoming)

The ATP Advantage: WE BUILD WITH YOU*
Value-Added Customization Services*
Thermal, Endurance, Security, and Longevity features arecustom-configurable to meet unique application- andsegment-specific requirements. ATP-developed firmware andhardware options are available to address special embedded
and industrial use cases.
Thermal Management Solutions
Available for NVMe SSDs, customizable solutions combine
firmware and hardware technologies (with heatsink options),
to overcome overheating challenges in high-speed
and high-performance storage. By understanding theperformance criteria, user application and system specifications,
ATP can offer tailor-fitted solutions to deliver improvesustained performance.
Extended Endurance
SSDs built on 3D TLC NAND flash deliver exceptional endurance.
In native TLC, they match MLC endurance, while thoseconfigured in pSLC mode are nearly on par with SLC drives.

MCU-Based HW+FW Power Loss Protection
Advanced power loss protection preserves data in sudden
power loss events. Select SSDs feature microcontroller
unit-based design with level 4 (data-in-flight) protection.
* Features and services may vary depending on project and customer request.

35

Cross-Temperature Operation Robustness
for 176-Layer NAND Storage Solutions
Robust error handling in cross temperature with a 125°C operating range
Performing operations across varying temperatures, such as writing in low-temperature conditions and reading at high temperatures,
can increase the occurrence of error bits, potentially compromising data integrity over time. ��ATP's cross-temperature error handlingfeature mitigates these issues, reducing errors and maintaining data integrity even as the NAND approaches the end of its operational life.

High

Error Bits(based on 1KB)

Low

36

Fresh NAND
(1 P/E cycle)

End-of-Life NAND
(100% P/E cycle)

ATP's use of
known good die (KGD)
industrial-grade NAND flash
ensures minimal impact
from cross-temperature
variations in the initial state.

Without
Error Handling

With
Cross-Temp Error Handling

Errors in NAND flash begin
to rise as it approaches theend of its operational life.

As NAND flash nears the end of its life,
implementing a robust error-handlingmechanism is vital for minimizing
errors and preserving data integrity.

PCIe® Gen4 NVMe M.2 2280 SSD
Key Features• Superior Read/Write performance• MCU-based Power Loss Protection Design with Level 4(data-in-flight) protection*• Self-Encrypting Drive (SED) with AES 256-bit Encryption,
TCG Opal 2.0 *• Thermal Heatsink Solutions**• End-to-End Data Path Protection• Anti-sulfuric resistor support** May vary by product and project support** Customization available on a project basis.

PCIe® Gen4 NVMe M.2 2280 SSD
Superior

Product Line

N651Si / N651Sc

N601ScInterface

PCIe G4 x4Flash TypeForm Factor

3D TLC
M.2 2280-D6-M1
Hardware + Firmware Based

Optional SED Features
Capacity

M.2 2280-D2-M

Firmware Based

Firmware Based-40°C to 85°C / 0°C to 70°C

Operating TemperaturePower Loss Protection Options

M.2 2280-D2-M

0°C to 70°C

AES 256-bit Encryption, TCG Opal 2.0
240 GB to 3.84 TB

240 GB to 1.92 TB

240 GB to 1.92 TB

Performance
6,450

Sequential Read (MB/s) up to
Sequential Write (MB/s) up to

6,050

Random Reads IOPS up to

1,091,000

Random Writes IOPS up to

1,245,000

1,095,000
1,244,000
Endurance and Reliability

Endurance (TBW)2 up to9,230 TB

Reliability MTBF @ 25°C

17,930 TB

5,700 TB

>2,000,000 hours
OthersDimensions (mm)Certifications
Warranty

80.0 x 22.0 x 3.85
80.0 x 24.4 x 12.5
(with 8 mm heatsink)

80.0 x 22.0 x 3.6
80.0 x 24.4 x 12.5
(with 8 mm heatsink)

80.0 x 22.0 x 3.6
80.0 x 24.4 x 12.5
(with 8 mm heatsink)
CE, FCC, BSMI, UKCA, RoHS, REACH
2 years

Technologies &Add-On Services3
Superior

S

▲

▲

▲

▲

▲

1. M.2 2280-D6-M form factor (max height: 3.85mm), offers Hardware Based Power Loss Protection. M.2 2280-D2-M form factor (max height: 3.6mm),
provides Firmware Based Power Loss Protection.
2. Under highest Sequential write value. May vary by density, configuration and applications.
3. Please refer to pages 56-58. ▲: Customization option available on a project basis.

37

PCIe® Gen3 NVMe M.2 2280 / 2242 / 2230 SSD
Key Features• MCU-based Power Loss Protection Design
with Level 4 (data-in-flight) protection*• Self-Encrypting Drive (SED) with AES 256-bit
encryption, TCG Opal 2.0 *• Thermal Heatsink Solutions**• End-to-End Data Path Protection• TRIM function support* May vary by product and project support** Customization available on a project basis.

PCIe® Gen3 NVMe M.2 2280 / 2242 / 2230 SSD
Superior

Premium

Product Line

N750Pi

N700Pi

N700PiInterface

N650Si

N700PcN650ScN600Si

N600ScPCIe G3 x4Flash Type

3D TLC

3D TLC (pSLC mode)

Form Factor

M.2 2230-S4-M

M.2 2280-D2-M

Operating Temperature-40°C to 85°C

Power Loss Protection Options

Hardware + Firmware Based-40°C to 85°C

-40°C to 85°C

0°C to 70°C

0°C to 70°C

-40°C to 85°C

0°C to 70°C

Hardware + Firmware Based or Firmware Based

Firmware Based

Optional SED Features
Capacity

M.2 2280-D2-M

AES 256-bit Encryption, TCG Opal 2.0
40 GB to 640 GB

40 GB to 320 GB

120 GB to 960 GB

40 GB to 160 GB

120 GB to 3.84 TB

Performance
3,150

Sequential Read (MB/s) up to
Sequential Write (MB/s) up to

3,420

2,000

3,050

1,600

2,820

2,670

Random Reads IOPS up to

147,789

135,600

222,700

225,200

Random Writes IOPS up to114,227

112,000

176,600

179,200

4,640 TB

10,600 TB

Endurance and Reliability
Endurance (TBW)1 up to

16,000 TB

21,300 TB

4,280 TB

Reliability MTBF @ 25°C

>2,000,000 hours
Others80.0 x 22.0 x 3.5 (M.2 2280 Bare PCBA)
80.0 x 24.4 x 12.5 (M.2 2280 with 8 mm heatsink)

Dimensions (mm)Certifications

80.0 x 22.0 x 3.5 (M.2 2280 Bare PCBA)
80.0 x 24.4 x 12.5 (M.2 2280 with 8 mm heatsink)

30.0 x 22.0 x 2.5

CE, FCC, BSMI, UKCA, RoHS, and REACH
are available for SSD models withcapacities between 120 GB to 1,920 GB;
RoHS/VCCI/CE/FCC are available for the
3.84 TB SSD model.

CE, FCC, BSMI, UKCA, RoHS, REACH

Warranty

5 years

2 years

PCIe® Gen3 NVMe M.2 2280 / 2242 / 2230 SSD
Value

Product Line

N600Vi

N600VcInterface

N600Vc

N600Vi

0°C to 70°C

-40°C to 85°C

N600Vi

N600VcPCIe G3 x4Flash Type

3D TLC

Form Factor

M.2 2280 S2-M

Operating Temperature-40°C to 85°C

Power Loss Protection Options

M.2 2230-S4-M

M.2 2242 D5-M

0°C to 70°C

-40°C to 85°C

0°C to 70°C

Firmware Based

Optional SED Features-

Capacity

120 GB to 960 GB

120GB to 480GB

Performance
Sequential Read (MB/s) up to

2,600

Sequential Write (MB/s) up to

1,870

1,550

Random Reads IOPS up to184,300

138,000

145,900

112,600

Random Writes IOPS up to

2,050

Endurance and Reliability
Endurance (TBW)1 up to2,880 TB

Reliability MTBF @ 25°C

>2,000,000 hours

768 TB

OthersDimensions (mm)80.0 x 22.0 x 2.2

30.0 x 22.0 x 2.5

42.0 x 22.0 x 3.6

Certifications

CE, FCC, BSMI, UKCA, RoHS, REACH

Warranty

2 years

Technologies &Add-On Services2
PCIe® Gen3 NVMe
M.2 2280 / 2242 / 2230

S

Premium▲

Superior▲

Value

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

38

▲
▲

▲

▲

▲

▲

▲

▲

▲

▲

PCIe® Gen4 NVMe U.2 SSD
Key Features• 15 mm Fin-Type Heatsink Design• MCU-based Power Loss Protection Design with Level 4(data-in-flight) protection*• Self-Encrypting Drive (SED) with AES 256-bit Encryption,
TCG Opal 2.0*
• End-to-End Data Path Protection• Hot-swappable• pSLC mode support *• Anti-sulfuric resistor support** May vary by product and project support

PCIe® Gen4 NVMe U.2 SSD
Product Line

Superior

Premium
N751PiInterface
Flash Type

PCIe G4 x4
3D TLC (pSLC mode)

3D TLC

Form Factor

2.5"-40°C to 85°C

Operating TemperaturePower Loss Protection Options

0°C to 70°C
Hardware + Firmware Based

Optional SED Features
Capacity

N601Sc

N651SiAES 256-bit Encryption, TCG Opal 2.0
320 GB to 2.56 TB

960 GB to 7.68 TB
Performance

Sequential Read (MB/s) up to

6,100

Sequential Write (MB/s) up to

6,000

5,500

Random Reads IOPS up to870,000

819,000

Random Writes IOPS up to

1,250,000

6,000

1,177,000
Endurance and Reliability

Endurance (TBW)1 up to

157,000 TB

10,280 TB

Reliability MTBF @ 25°C

>2,000,000 hours

Dimensions (mm)100 x 69.85 x 15

10,370 TB

OthersCertifications
Warranty

RoHS/VCCI/CE/FCC/UKCA
5 years

2 years

Technologies &Add-On Services2

S

Premium▲▲

Superior

▲

▲

▲

▲

▲

▲

▲

1 The actual lifetime of the product will depend on the JESD219A enterprise workload.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

39

PCIe® Gen3 NVMe U.2 SSD
Key Features• Thermal Management Solutions*• High-Capacity NVMe Drive• LDPC & RAID Data Recovery• End-to-End Data Path Protection• S.M.A.R.T / TRIM / Global Wear Leveling* Customization available on a project basis

PCIe® Gen3 NVMe U.2 SSD
Product Line

Superior
N600SiInterface

PCIe G3 x4Flash Type

3D TLC

Form Factor

2.5"

Operating Temperature-40°C to 85°C

Power Loss Protection Options

Hardware + Firmware Based

Optional SED Features

AES 256-bit Encryption, TCG Opal 2.0

Capacity

960 GB to 7.68 TB
Performance

Sequential Read (MB/s) up to

3,100

Sequential Write (MB/s) up to

1,400

Random Reads IOPS up to

190,000

Random Writes IOPS up to168,000
Endurance and Reliability

Endurance (TBW)1 up to

21,000 TB

Reliability MTBF @ 25°C

>2,000,000 hours

Dimensions (mm)100.0 x 69.85 x 7.0

Certifications

RoHS, VCCI, CE, FCC

Warranty

2 years

OthersTechnologies &Add-On Services2
Superior

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

40

▲

▲

SATA III M.2 2280 / 2242 SSD
Key Features• MCU-based Power Loss Protection Design with Level 4 (data-in-flight) protection*• LDPC & RAID Data Recovery• End-to-End Data Path Protection• TRIM / Global Wear Leveling support* May vary by product and project support
SATA III M.2 2280 SSD
Product Line

Premium
A750PiSuperior
A700Pi

A650SiValue

A650ScInterface

A600Si

A600Sc

A600VcSATA III 6 Gb/s

Flash Type

3D TLC (pSLC mode)

Form Factor

2280 D2-B-M

Operating Temperature-40°C to 85°C

3D TLC

3D TLC
2280 D1-B-M-40°C to 85°C

Power Loss
Protection Options
Optional SED Features

2280 S2-B-M

2280 D2-B-M

0°C to 70°C

-40°C to 85°C

0°C to 70°C

0°C to 70°C
Firmware Based

Hardware + Firmware Based
AES 256-bit Encryption, TCG Opal 2.0

Capacity

80 GB to 320 GB

240 GB to 960 GB

Sequential Read (MB/s) up to

560

Sequential Write (MB/s) up to

120 GB to 960 GB

32 GB to 1 TB

560

560

560

520

520

510

525

90,000103,000

100,000

72,00086,00088,00085,0002,792 TB

2,792 TB

Performance

Random Reads
IOPS up to
Random Writes
IOPS up to

88,000Endurance and Reliability
Endurance (TBW)1 up to

19,200 TB

12,800 TB

4,655 TB

Reliability MTBF @ 25°C

>2,000,000 hours

Dimensions (mm)80 x 22 x 3.35

Certifications

CE, FCC, BSMI, UKCA, RoHS, REACH

OthersWarranty

80 x 22 x 2.2

5 years

2 years
SATA III M.2 2242 SSD

Product Line

Premium
A800PiSuperior

A750Pi

A650Si

A700PiInterface
Flash TypeValue

A650Sc

A600Si

A600Sc

A600VcSATA III 6 Gb/s
SLC

3D TLC (pSLC mode)

Form Factor

2242 D2-B-M

Operating Temperature-40°C to 85°C

3D TLC

3D TLC
2242 D2-B-M

2242 D6-B-M-40°C to 85°C

Power Loss
Protection Options
Optional SED Features-

Capacity

8 GB to 64 GB

40 GB to 160 GB

Sequential Read (MB/s) up to

530

560

Sequential Write (MB/s) up to
Random Reads
IOPS up to
Random Writes
IOPS up to

400

520

76,00068,00076,00088,0000°C to 70°C

-40°C to 85°C

0°C to 70°C

0°C to 70°C
Firmware Based

Hardware + Firmware Based
AES 256-bit Encryption, TCG Opal 2.0

120 GB to 480 GB

32 GB to 1 TB

560

560

560

525

510

525

104,000

100,000

70,50092,00088,00081,0001,396 TB

2,792 TB

240 GB to 960 GB
Performance

Endurance and Reliability
Endurance (TBW)1 up to

5,333 TB

9,600 TB

6,400 TB

4,655 TB

Reliability MTBF @ 25°C

>2,000,000 hours

Dimensions (mm)42 x 22 x 3.5

OthersCertifications
Warranty

CE, FCC, UKCA,
RoHS, REACH

CE, FCC, BSMI, UKCA, RoHS, REACH
5 years

2 years

Technologies &Add-On Services2

S

Premium▲

Superior

▲

▲

▲

▲

▲

▲

▲

▲

Value

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

41

SATA III 2.5" SSD
Key Features• MCU-based Power Loss Protection Design with Level 4(data-in-flight) protection*• Self-Encrypting Drive (SED) with AES 256-bit encryption,
TCG Opal 2.0*
• NSA-compliant Secure Erase*• MIL-STD-810G standards** May vary by product and project support

SATA III 2.5" SSD
Product Line

Superior

Premium
A800Pi

A750Pi

A700Pi

A650SiInterface
Flash TypeValue
A600Si

A600Sc

A600Vc-40°C to 85°C

0°C to 70°C

0°C to 70°C

A650ScSATA III 6 Gb/s
SLC

3D TLC (pSLC mode)

3D TLC

2.5"

Form Factor
Operating Temperature-40°C to 85°C

0°C to 70°C

-40°C to 85°C

Power Loss
Protection Options

Firmware Based

Hardware + Firmware Based

Optional SED Features-

Capacity

8 GB to 256 GB-

AES 256-bit Encryption, TCG Opal 2.0
240 GB to 1,920 GB

80 GB to 640 GB

32 GB to 1 TB

120 GB to 1,920 GB

Performance

Sequential Read
(MB/s) up to
Sequential Write(MB/s) up to
Random Reads
IOPS up to

420

520

525

520

525

76,00090,000103,000

100,000

72,000Random Writes
IOPS up to

74,00088,00090,00091,00085,000Endurance (TBW)1
up to
Reliability MTBF
@ 25°C
Reliability
Number of Insertions

21,333 TB

5,585 TB

2,792 TB

Dimensions (mm)100 x 69.85 x 9.2

Certifications

CE, FCC, UKCA,
RoHS, REACH

520

560

560

560

Endurance and Reliability
38,400 TB

25,600 TB

9,310 TB
>2,000,000 hours
10,000 minimum
OthersWarranty

100 x 69.85 x 7/9.2

100 x 69.85 x 7

CE, FCC, BSMI, UKCA, RoHS, REACH
2 years

5 years

Technologies &Add-On Services2▲

Superior▲

Value

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

42

S

Premium

▲

▲

▲

▲

▲

▲

▲

SATA III mSATA SSD
Key Features• MCU-based Power Loss Protection Design with Level 4(data-in-flight) protection*• Self-Encrypting Drive (SED) with AES 256-bit encryption,
TCG Opal 2.0*

• LDPC & RAID Data Recovery• End-to-End Data Path Protection• TRIM / Global Wear Leveling support* Customization available on a project basis

SATA III mSATA SSD
Product Line

Premium
A800PiSuperior

A750Pi

A700PiSLC

3D TLC (pSLC mode)

Value
A600Si

A600Sc

A600Vc-40°C to 85°C

0°C to 70°C

0°C to 70°C

3D TLC
MO-300A

Form Factor
Operating Temperature

A650ScSATA III 6 Gb/s

Interface
Flash Type

A650Si-40°C to 85°C

-40°C to 85°C

Power Loss
Protection Options-40°C to 85°C

0°C to 70°C

Hardware + Firmware Based

Optional SED Features

AES 128/256-bit
Encryption

Capacity

8 GB to 128 GB

Firmware Based-

AES 256-bit Encryption, TCG Opal 2.0
40 GB to 160 GB

240 GB to 960 GB

120 GB to 480 GB

32 GB to 1 TB

560

560

Performance
Sequential Read
(MB/s) up to
Sequential Write(MB/s) up to
Random Reads
IOPS up to
Random Writes
IOPS up to

530

560

430

560
525

510

525

76,00090,000520
94,000104,000

100,000

72,000-88,00085,00090,00088,00085,000

10,667 TB

9,600 TB

6,400 TB

1,396 TB

2,792 TB

Endurance and Reliability
Endurance (TBW)1
up to
Reliability MTBF
@ 25°C>2,000,000 hours
OthersDimensions (mm)Certifications
Warranty

4,655 TB

50.8 x 29.85 x 3.5
CE, FCC, UKCA,
RoHS, REACH

CE, FCC, BSMI, UKCA, RoHS, REACH
5 years

2 years

Technologies &Add-On Services2

S

Premium▲

Superior

▲

▲

▲

▲

▲

▲

▲

▲

Value

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

43

USB 3.2 NANODURA Dual
Key Features• Global wear leveling• Bad block management algorithm• High reliability• “Plug and play”connection support hot swap
• With higher random write performance• Support OTG Type-C connector

USB 3.2 NANODURA Dual
Product Line

Superior
B600ScInterfaceUSB 3.2

Flash Type

TLC

Form Factor

USB Type-A
USB Type-A/Type-C Dual Connector1 (Optional)

Operating Temperature

0°C to 70°C

Power Loss Protection Options

Firmware Based

Optional SED Features-

Capacity

32 GB to 128 GB
PerformanceUSB 3.2 Sequential Read (MB/s) up to270

USB 3.2 Sequential Write (MB/s) up to85

USB 2.0 Sequential Read (MB/s) up to45

USB 2.0 Sequential Write (MB/s) up to30
Endurance and Reliability

Endurance (TBW)2 up to

84 TB

Reliability MTBF @ 25°C

>2,000,000 hours

Reliability Number of Insertions

10,000 minimum

Dimensions (mm)28 x 12.25 x 4.65
Dual Connector: 36.40 x 12.25 x 4.65

Certifications

CE, FCC, UKCA, RoHS

Warranty

2 years

OthersTechnologies &Add-On Services3
Superior

1 Dual connector device supports USB On-The-Go (OTG)
2 Under highest Sequential write value. May vary by density, configuration and applications.
3 Please refer to pages 56-58. ▲: Customization option available on a project basis.

44

USB 2.0 NANODURAKey Features

USB 2.0 NANODURASuperior
B600ScPremium
B800Pi

Product Line

• Global wear leveling• Bad block management algorithm• High reliability• “Plug and play”connection support
hot swap

USB 2.0 (480 Mbps)

Interface
Flash Type

SLC

MLC

Form Factor

USB Type-A-40°C to 85°C

Operating Temperature

0°C to 70°C

Power Loss Protection Options

Firmware Based

Optional SED Features-

Capacity

512 MB to 8 GB

4 GB to 8 GB
Performance

Sequential Read (MB/s) up to

31

Sequential Write (MB/s) up to

21

26
10
Endurance and Reliability

Endurance (TBW)1 up to

192 TB

9.6 TB

Reliability MTBF @ 25°C

>5,000,000 hours>2,000,000 hours

Reliability Number of Insertions

10,000 minimum

Dimensions (mm)34 x 12.2 x 4.5

OthersCertifications

CE, FCC, UKCA, RoHS

Warranty

5 years

2 years

Technologies &Add-On Services2
Premium
Superior

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

USB 2.0 eUSB
Key Features

USB 2.0 eUSB
Product Line

Premium
B800PiSuperior
B600Sc

B800PiInterface

Compatible with USB 2.0 (480 Mbps)

Flash TypeSLC

Form Factor-40°C to 85°C

Operating TemperaturePower Loss Protection Options

MLC
Pitch 2.54 mm / 2.00 mm
0°C to 70°C

Firmware Based* Optional, by project support.

Hardware + Firmware Based

Optional SED Features
Capacity• Global wear leveling• Power Loss Protection• Higher random write performance• Hardware Write Protect*

1 GB to 32 GB

1 GB to 16 GB

8 GB to 32 GB

Performance
Sequential Read (MB/s) up to

36

30

25

Sequential Write (MB/s) up to

23

25

19

Endurance (TBW)1 up to

1,548 TB

Endurance and Reliability
Reliability MTBF @ 25°C

1,280 TB

38.4 TB>2,000,000 hours>5,000,000 hours
10,000 minimum

Reliability Number of Insertions
OthersDimensions (mm)36.9 x 26.6 x 9.5

Certifications

CE, FCC, UKCA, RoHS

Warranty

5 years

Technologies &Add-On Services2

2 years

S

Premium▲▲▲

Superior▲▲▲

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

45

Memory Cards

Small Cards, Big Performance for the Intelligent Edge

ATP memory cards are excellent for non-stop video recording,edge computing, artificial intelligence (AI)-enabled surveillance,
robotics, point-of-sale (POS) transactions, handheld computing,and other applications requiring the portability of removablestorage media. Ideal for storing operating systems (OS) and/or
application programs, or to extend storage capacity. The small
yet ruggedized form factor is IP57/IP67-certified and supports
the industrial temperature range ( -40°C to 85°C) for reliable
function even in harsh environments.
Available form factors include SD/microSD cards, which are alsoavailable as Technical Security Solutions (TSE) for the German
fiscal market, ensuring tamper-proof point-of-sale (POS)transactions. Memory card that comply with CompactFlash
Association standards include legacy CF and CFast cards (SATA
interface ) as well as the CFexpress Type B (PCIe/NVMe) cards
using the PCIe 4.0 x 2 interface.

The ATP Advantage: WE BUILD WITH YOU*
Value-Added Customization Services*
One Size Does Not Fit All. Applications for removable storage
are so numerous and so varied that off-the-shelf solutions may
not be suitable for specific content volumes, security, reliability,and endurance requirements. ATP can custom-configure
firmware and hardware, so customers get what they really need.

ATP-Developed Firmware, Hardware, and Value-Added Services
ATP Joint Validation Service**. Compatibility and function
tests are conducted using the client’s host devices
and systems.
ATP SD Life Monitor: Intelligent Workload Inspection.
This gives customers a quick look at the write operation andfile size by the host systems pre-qualification.
Advanced Card Analysis. ATP’s uniquely designed substrateand debug tool make system-in-package (SiP) component
post-analysis possible.
Firmware Power Loss Protection. Prevents data loss or
corruption in the event of sudden power outages.

Complete Coverage Rapid Diagnostic Test
Includes testing in extreme temperatures to ensure reliable
operation from -40°C to 85°C. RDT covers all areas of thestorage device including user, firmware and spare areas.

Rugged Design for Harsh Environments
ATP memory cards are exceptionally robust, resistant todamaging elements such as dust (IP5X/IP6X), humidity/water(IPX7), electrostatic discharge (ESD), extreme temperature,
shock/vibration, and more.
* Features and services may vary depending on project and customer request.
** Value-added service

46

SD/SDHC/SDXC Card
• SD Life Monitor• Dynamic Data Refresh• Power failure protection• Industrial temperature• 100% MP Level Test

SD/SDHC/SDXC Card
Product Line

Premium
S800PiSuperior

S750PiInterface

512 MB to 2 GB, HS mode
4 GB to 8 GB, UHS-I

Flash TypeSLC

S700Pi

S750PcS650Si

S650ScUHS-I
3D TLC

3D TLC (pSLC mode)

Form Factor

SD Card-40°C to 85°C

Operating Temperature-25°C to 85°C

-40°C to 85°C

-25°C to 85°C

Power Loss Protection Options-40°C to 85°C

-25°C to 85°C

Firmware Based

Optional SED Features
Capacity

S700Pc

512 MB to 8 GB

16 GB to 128 GB

8 GB to 32 GB

64 GB to 512 GB

Performance
Sequential Read (MB/s) up to

68

97

98

97

Sequential Write (MB/s) up to

39

82

80

76

Endurance and Reliability
Endurance (TBW)1 up to

192 TB

12,670 TB

582 TB

2,000 TB

Reliability MTBF @ 25°C

>5,000,000 hours>3,000,000 hours>3,000,000 hours>2,000,000 hours

Reliability Number of Insertions

20,000 (SDA spec minimum 10,000)

Dimensions (mm)32.0 x 24.0 x 2.1

OthersCertifications

CE, FCC, UKCA, RoHS

Warranty

5 years

2 years

SD/SDHC/SDXC Card
Product Line

Superior
S600Si

S600Sc

S600Sc

S600Si / Sc

MLC

MLC / 3D TLC-25°C to 85°C

-40°C to 85°C /-25°C to 85°C

UHS-I

Interface
Flash Type

3D TLC

Form Factor
Operating Temperature

SD Card-40°C to 85°C

-25°C to 85°C

Power Loss Protection Options

Firmware Based

Optional SED Features
Capacity

32 GB to 128 GB

Sequential Read (MB/s) up to
Sequential Write (MB/s) up to

8 GB to 16 GB

8 GB to 256 GB

Performance
94

68

96

55

23

65

19 TB

307 TB

Endurance and Reliability
Endurance (TBW)1 up to

77 TB

Reliability MTBF @ 25°C
Reliability Number of Insertions>2,000,000 hours
20,000 (SDA spec minimum 10,000)
OthersDimensions (mm)32.0 x 24.0 x 2.1

Certifications

CE, FCC, UKCA, RoHS

Warranty

2 years

Technologies &Add-On Services2
Premium▲

Superior

▲

▲

▲
▲

▲

▲

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

47

microSD/microSDHC/microSDXC Card
Key Features• SD Life Monitor• Dynamic Data Refresh• Power failure protection• Industrial temperature• 100% MP Level Test

microSD/microSDHC/microSDXC Card
Superior

Premium

Product Line

S800Pi

S750PiInterface

512 MB to 2 GB, HS mode
4 GB to 8 GB, UHS-I

Flash TypeSLC

S750Pc

S700Pc

S700Pi

S650Si

S650ScUHS-I
3D TLC (pSLC mode)

3D TLC (pSLC mode)

Form Factor

3D TLC

microSD Card

Operating Temperature-40°C to 85°C

-25°C to 85°C

Power Loss Protection Options-40°C to 85°C

-25°C to 85°C

-40°C to 85°C

-25°C to 85°C

Firmware Based

Optional SED Features-

Capacity

16 GB to 128 GB

512 MB to 8 GB

8 GB to 64 GB

64 GB to 512 GB

97

96

97

82

76

76

Performance
Sequential Read (MB/s) up to68

Sequential Write (MB/s) up to39

Endurance and Reliability
Endurance (TBW)1 up to

192 TB

12,670 TB

1,164 TB

2,000 TB

Reliability MTBF @ 25°C

>5,000,000 hours>3,000,000 hours>3,000,000 hours>2,000,000 hours

20,000 (SDA spec minimum 10,000)

Reliability Number of Insertions

OthersDimensions (mm)15.0 x 11.0 x 1.0

Certifications

CE, FCC, UKCA, RoHS

Warranty

5 years

2 years

microSD/microSDHC/microSDXC Card
Superior

Product Line

S600Si

S600Sc

S600ScUHS-I

Interface
Flash Type

3D TLC

Form Factor

MLC

microSD Card
-40°C to 85°C

Operating TemperaturePower Loss Protection Options-25°C to 85°C
Firmware Based

Optional SED Features-

Capacity

32 GB to 256 GB

8 GB to 32 GB

Performance
Sequential Read (MB/s) up to97

68

Sequential Write (MB/s) up to62

24

Endurance and Reliability
153 TB

Endurance (TBW)1 up to
Reliability MTBF @ 25°C
Reliability Number of Insertions

38 TB>2,000,000 hours
20,000 (SDA spec minimum 10,000)
OthersDimensions (mm)15.0 x 11.0 x 1.0

Certifications

CE, FCC, UKCA, RoHS

Warranty

2 years

Technologies &Add-On Services2
Premium▲

Superior

▲

▲

▲
▲

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

48

▲

▲

PCIe® Gen4 NVMe CFexpress Card
Key Features• Superior Read/Write performance• Self Encrytion Drive SED with AES 256-bit Encryption, TCG OPAL 2.0*
• Host Memory Buffer (HMB) support• Hardware Write Protect** Optional, by project support.

PCIe® Gen4 NVMe CFexpress Card
Product Line

Premium

Superior

N751PiInterface
Flash Type

PCIe G4 x2
3D TLC

3D TLC (pSLC mode)

Form Factor

CFexpress Type B-40°C to 85°C

Operating TemperaturePower Loss Protection Options

0°C to 70°C
Firmware Based

Optional SED Features
Capacity

N601Sc

N651SiAES 256-bit Encryption, TCG Opal 2.0
128 GB to 1 TB

40 GB to 320GB
Performance

Sequential Read (MB/s) up to
Sequential Write (MB/s) up to

3,500
3,200

3,100

Random Reads IOPS up to
Random Writes IOPS up to770,000
735,000

750,000
Endurance and Reliability

Endurance (TBW)1 up to

1,000 TB

4,410 TB

Reliability MTBF @ 25°C

>2,000,000 hours

Reliability Number of Insertions

10,000 minimum

Dimensions (mm)29.6 x 38.5 x 3.8

OthersCertifications
Warranty

CE, FCC, RoHS, UKCA
5 years

2 years

Technologies &Add-On Services2

S

Premium▲▲

Superior

▲

▲

▲

▲

▲

▲

▲

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

49CFast Card
Key Features

CFast Card

• Advanced wear leveling algorithm• Bad block management• AutoRefresh technology• Power Loss Protection• S.M.A.R.T

Premium

Product Line

A800PiInterface

SATA III 6 Gb/s

Flash TypeSLC

Form Factor

CFast Type I

Operating Temperature-40°C to 85°C

Power Loss Protection Options

Hardware + Firmware Based

Optional SED Features-

Capacity

8 GB to 32 GB
Performance

Sequential Read (MB/s) up to

500

Sequential Write (MB/s) up to300

Random Reads IOPS up to

35,800Random Writes IOPS up to

Endurance and Reliability

Endurance (TBW)1 up to

2,667 TB

Reliability MTBF @ 25°C

>2,000,000 hours
10,000 minimum

Reliability Number of Insertions
OthersDimensions (mm)36.4 x 42.8 x 3.6

Certifications

CE, FCC, UKCA, RoHS

Warranty

5 years

Technologies &Add-On Services2

S

Premium

▲

▲

▲

▲

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

CompactFlash Card
Key Features

CompactFlash Card
Product Line

PremiumInterface

UDMA 0~4
SLC

I600Sc

I700Sc

I800PiFlash TypeUDMA 0~6
Pseudo SLC

Form Factor

MLC

CF Type I

Operating Temperature-40°C to 85°C

0°C to 70°C

Power Loss Protection Options

Hardware + Firmware Based

Firmware Based

Optional SED Features
Capacity• Global wear leveling and badblock management• AutoRefresh technology• Power Loss Protection• Power saving mode
• S.M.A.R.T support

Superior

512 MB to 32 GB

8 GB to 16 GB

16 GB to 32 GB

Performance
Sequential Read (MB/s) up to

61

110

108

Sequential Write (MB/s) up to

55

80

46

Endurance and Reliability
Endurance (TBW)1 up to

1,280 TB

Reliability MTBF @ 25°C

>5,000,000 hours

128 TB

38 TB>2,000,000 hours

Reliability Number of Insertions

10,000 minimum
OthersDimensions (mm)36.4 x 42.8 x 3.3

Certifications

CE, FCC, RoHS, UKCA

Warranty

5 years

2 years

Technologies &Add-On Services2

S

Premium▲▲

Superior▲▲

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

50

SecurStor microSD Card
Key Features

Security Features*• Additional AES Key Protection• Library access possible (MBR required)• Authentication / Privilege Control• Total 10 User Accounts can set up
privileges individually• Multi-Layer Authentication:
Privilege control for up to 10 users offer highlevels of protection.
• SecurBoot: Ensures the boot partition's
integrity and validity by either securing it
when permitted by the operating systemor safeguarding the stored configuration of
the Raspberry Pi system's BIOS.

Product Name

SecurStor microSD

Product Line

SecurStor

Flash TypeMLC

Density

4 GB to 16 GB

Performance
Sequential Read (MB/s) up to
Performance
Sequential Write (MB/s) up to• Hardware AES-256 XTS Encryption(SecurEncrypt):
Secures the User Data area through robust
hardware AES-256 XTS encryption,
providing the highest level of encryption
without compromising performance.
• Secure Erase: Deletes the encryption key
to prevent unauthorized retrieval orrecovery of the user data.
• Compliance with US Air Force System
Security Instruction (AFSSI) 5020
standard or alike is available on a
per-request basis* Actual availability of specific features may varyby product and capacity.
Please contact ATP for details.

105Interface

UHS-I

Operating Temperature-25°C to 85°C

Reliability MTBF @ 25°C

>2,000,000 hours

Reliability Number of Insertions

10,000Dimensions (mm)15.0 x 11.0 x 1.0

TSE Storage Solutions
Key Features• Compliant with the requirements of the BSI TR-03153,
Common Criteria PP-SMAERS, PP-CSP• Projected Certificate Validity: Up to 8 years(also available with 5-year validity)• Form Factors: microSD, SD, USB• Capacities: 8 GB and 16 GB• Data Retention: Up to 10 years(depending on test conditions)• Lifetime: 20 million signatures*• OS Support: Windows, Android, Linux* May vary on payload size (s)Product NameTSE Storage Solutions

Product Line

SecurStor

Flash TypeMLC

Density

8 GB / 16 GB

Performance
Signature time<150 ms

Interface

UHS-I

Operating Temperature-25°C to 85°C

Reliability MTBF @ 25°C

>2,000,000 hours

Reliability Number of Insertions

10,000Dimensions (mm)15.0 x 11.0 x 1.0

51

Managed NAND

Extreme Endurance, Advanced Performance in a Tiny Package

ATP’s managed NAND solutions integrate raw NAND flash
memory and hardware controller. As soldered-down solutions,they are secure against constant vibrations, making them ideal
for embedded and automotive applications requiring rugged
endurance and durability. Their tiny footprint makes them
perfectly suitable for embedded systems with spaceconstraints but require rugged endurance, reliability anddurability in harsh environments.
They are available in two form factors: e.MMC, which uses a
153-ball fine pitch ball grid array (FBGA package) and NVMe
Heat Sink Ball Grid Array (HSBGA), using high-speed PCIe 3.0
interface x4 lanes to deliver up to 32 Gb/s bandwidth at 8 Gb/s
per lane.

Value-Added Customization Services*
Integrated circuits (IC) package customization service is enabled by
ATP’s process ownership. Legacy land grid array (LGA) package
support is available from 3 to 5 years. ATP also offers packaging
flexibility:• Package sizes (9x10, 11.5x13, 12x18 mm)• Package forms (100-/132-ball BGA, LGA)
• Die packages (octa-die or higher)
Optional Security Features: HW Write Protect, HW Quick Erase, HWSecure Erase (Data Sanitization, AFSSI-5020), AES-256 Encryption,
TCG Opal 2.0

e.MMC

NVMe HSBGA

Extreme Endurance**
2-3X higher endurance than standard e.MMC for higher
terabytes written (TBW), healthy memory storage, and longproduct service life.

pSLC Mode
Increases endurance and reliability and offers 2X-3X better
sustainable performance.

SRAM Soft Error Detection and Recovery***
Maximizes data integrity by providing timely error detection,
logging, and configurable action to address the error.
Product Traceability
Laser imprints important information on the ATP e.MMC
to identify each piece for accurate tracking and efficientinventory management.
* Features and services may vary depending on project and customer request.
** Under best write amplification index (WAI) with highest sequential write
value. May vary by density, test configuration, workload and applications.
*** Configuration is predetermined by the customer with ATP and cannot
be changed on the field.

52

The ATP Advantage: WE BUILD WITH YOU*

5 mW Power Consumption in Sleep Mode
Low power consumption of only 5 mW during Power State 4(Sleep Mode) delivers huge power savings.
Host Memory Buffer (HMB) Support
Improves performance by obtaining DRAM resources as cache,thus overcoming the limited memory capacity within thestorage and optimizing I/O performance.
Better Thermal Dissipation
The heat sink effectively transfers heat to cool the device andkeep the performance at optimal levels.

e.MMCKey Features• AEC-Q100 Grade 2(-40°C~105°C) Compliant*• AEC-Q100 Grade 3(-40°C~85°C) Compliant*• Extra-high endurance: 2-3X higher
than standard e.MMC*• Complies with JEDEC e.MMC v5.1 Standard (JESD84-B51)• 153-ball FBGA (RoHS compliant, "green package")• LDPC ECC engine** May vary by product and project support
e.MMC

Extended Industrial Grade

Product Line
Flash Type

Automotive Grade 2

Automotive Grade 3

Premium

Superior

Premium

Superior

Premium

Superior

E700Pa

E600Sa

E700Paa

E600Saa

E700Pia

E600Sia

3D MLC (pSLC mode)

3D MLC

3D MLC (pSLC mode)

3D MLC

3D MLC (pSLC mode)

3D MLCIC Package

153-ball FBGAJEDEC Specification

v5.1, HS400

Power Loss
Protection Options
Operating Temperature
Capacity*

Industrial Grade
Premium
E750Pi

E700Pi

E700Pi3D TLC (pSLC mode) 3D MLC (pSLC mode) 3D TLC (pSLC mode)

Firmware Based-40°C to 105°C
8 GB to 64 GB

16 GB to 128 GB-40°C to 105°C
8 GB to 64 GB-40°C to 85°C

16 GB to 128 GB

8 GB to 64 GB-40°C to 85°C

16 GB to 128 GB

10 GB to 21 GB

8 GB to 64 GB

10 GB to 40 GB

300 / 170

295/ 215

300 / 240

290 / 225

Performance

Sequential Read/
Write up to (MB/s) (Max.)**300 / 240

300 / 170

300 / 240

300 / 240

300 / 170Bus Speed Modes

x1 / x4 / x8

ICC (Typical RMS
in Read/Write) mA (Max.)145 / 175

125 / 175

145 / 175

125 / 175

145 / 175

125 / 175

95.5 / 92

145 / 175

100 / 110

ICCQ (Typical RMS
in Read/Write) mA (Max.)

120 / 100

115 / 95

120 / 100

115 / 95

110 / 95

115 / 95

104 / 87.5

120 / 100

105 / 100Endurance TBW**(Max.)

1,213 TB

824 TB

1,213 TB

824 TB824 TB

1,034 TB

1,320 TB

1,364 TB

Endurance and Reliability
1,320 TB

Reliability MTBF @ 25°C

>2,000,000 hours

Dimensions (mm)11.5 x 13.0 x 1.3

Certifications

AEC-Q100, RoHS, REACH

Warranty

One Year

Others
RoHS, REACH

e.MMC
Industrial Grade
Product Line
Flash Type

Commercial Grade

Superior

Premium

E600Si

E600Si

E750Pc3D TLC

3D MLC

3D TLC

3D TLC (pSLC mode)

IC Package

E700PcE650ScValue
E600Vc

E600Vc3D TLC

3D TLC

153-ball FBGAJEDEC Specification

v5.1, HS400

Power Loss
Protection Options

Firmware BasedOperating Temperature
Capacity*

Superior

E650Si-40°C to 85°C

-25°C to 85°C

32 GB to 64 GB 16 GB to 128 GB 32 GB to 128 GB 10 GB to 21 GB

10 GB to 40 GB 32 GB to 64 GB 32 GB to 128 GB

32 GB

Performance
Sequential Read/
Write up to (MB/s)**

270 / 215

300 / 170Bus Speed Modes

290 / 225

295 / 215

290 / 225

270 / 215

290 / 225

250 / 135

x1 / x4 / x8

ICC (Typical RMS
in Read/Write) mA (Max.)69.5 / 68.5

125 / 175

100 / 11095.5 / 92

100 / 11069.5 / 68.5

100 / 11081.5 / 49.5

ICCQ (Typical RMS
in Read/Write) mA (Max.)88 / 85.5

110 / 100

105 / 100

104 / 87.5

105 / 100

88 / 85.5

105 / 100

80.5 / 61.5

1,364 TB

70 TB

52 TB

8.3 TB

Endurance and Reliability
Endurance TBW (Max.)
**

70 TB

824 TB

52 TB

1,034 TB

Reliability MTBF @ 25°C

>2,000,000 hours

Dimensions (mm)11.5 x 13.0 x 1.0

Certifications

RoHS, REACH

Warranty

One Year

Others
9.0 x 10.0 x 0.8

Technologies &Add-On Services***
Premium▲

Superior
Value

▲
▲

* Low-density parity-check error correcting code. By product support.
** All performance is collected or measured using ATP proprietary test environment, without file system overhead.
*** Please refer to pages 56-58. ▲: Customization option available on a project basis.

▲

53

PCIe® Gen3 NVMe M.2 Type 1620 HSBGA SSD
Key Features• PCIe Gen3 x4, NVMe 1.3, M.2 Type 1620
• pSLC mode with 2X-3X of Sustainable Performance*• High/Stable performance with Optimized Thermal Throttling
Firmware/Heatsink (HSBGA)• Optimized Power Consumption: 5 mW during Power State 4• DRAM-less configuration supporting Host Memory Buffer (HMB)*• Optional Security features available*** Under highest Sequential write value. May vary by density, configuration, and applications.
** Customization available on a project basis

PCIe® Gen3 NVMe M.2 Type 1620 HSBGA SSD
Product Line

Premium
N700PiValue
N700Pc

N600ViInterface
Flash Type

3D TLC

3D TLC (pSLC mode)

Form Factor
Operating Temperature

N600VcPCIe G3 x4
291-Ball, HSBGA-40°C to 85°C

-40°C to 85°C

0°C to 70°C

Power Loss
Protection Options

0°C to 70°C

Firmware Based

Optional SED Features

AES 256-bit Encryption, TCG Opal 2.0-

Capacity

40 GB to 160 GB

120 GB to 480 GB
Performance

Sequential
Read (MB/s) up to
Sequential
Write (MB/s) up to
Random Reads
IOPS up to
Random Writes
IOPS up to

2,000

2,050

1,600

1,550

135,600

138,000

112,000

112,600
Endurance and Reliability

Endurance (TBW)1 up to

4,280 TB

768 TB

Reliability MTBF @ 25°C

>2,000,000 hours

Dimensions (mm)16.0 x 20.0 x 1.6

Certifications

RoHS, REACH

Warranty

1 yearOthersTechnologies &Add-On Services2
PremiumValue

1 Under highest Sequential write value. May vary by density, configuration and applications.
2 Please refer to pages 56-58. ▲: Customization option available on a project basis.

54

▲

▲

▲

▲

Flash Products Naming RuleN 651 S i a
InterfaceEndurance

Uppercase

Numeral

N: PCIe (NVMe)
A: SATA
B: USB
I: PATA/IDE (CF)S: SD/microSD
E: e.MMC/eMCP
U: UFS

80: SLC
75: Enhanced SLC mode
70: SLC mode
65: Enhanced TLC
60: Native TLC/MLC

Technology
Iterations

ProductLine

Temperature Edition

NumeralUppercase

Reserved todefine Core
technology/interface
generation
change

P: Premium c: Commercial a: Automotive
S: Superior i: Industrial
e: Industrial Enterprise
V: Value
a: Automotive

Lowercase

Lowercase

Premium LineThe ATP Premium Line consists of mass storage solutions built for uncompromising performance, maximum dependability,and exceptional endurance. Outfitted with best-in-class technologies ensuring the highest levels of reliability, these solutions
are hardwired for the most demanding mission-critical applications where system failures or interruptions can significantly impact
operations. With industrial temperature ratings of -40°C to 85°C, these rugged solutions can withstand harsh operating environments
and extreme temperatures. Unparalleled usage life and brisk write speeds set the Premium Line a cut above the rest. High input/output
operations per second (IOPS) ensure consistently high performance, and ATP’s power loss protection technology guarantees that datain transit are safely stored to the flash chip in the event of a power loss, thus safeguarding data integrity, averting data loss or corruption,and preventing device damage.

Superior LineThe ATP Superior Line brings together powerful and proven features and technologies for rigorous operations in diverse industries, capably
handling mixed workloads with high IOPS requirements. Generous storage densities make these products ideal for data-hungry
and write-intensive applications; mid-density drive options offer a wider range of choices for cost efficiency; and, configurable
over-provisioning gives users flexibility to make adjustments based on actual workloads for the optimal balance between drive performanceand endurance. ATP Superior Line products are available in both industrial temperature (-40°C to 85°C) and commercial temperature
ratings (embedded SSD: 0°C to 70°C; SD/microSD card: -25°C to 85°C), so users can choose the temperature range most appropriate
for their needs.

Value LineThe ATP Value Line integrates advanced essential solutions to the growing needs of enterprises and industries, offering sustained,
reliable performance and consistent reliability. Superb choices as embedded boot or boot image devices, they are ideally suitedfor Internet of Things (IoT) applications, spurring greater connectivity for homes, cars, medical equipment, and other smart devices.
Ample storage capacity is available for installing an operating system with space to spare for other applications.

Automotive Edition
The ATP Automotive Edition consists of tailor-made solutions to meet automotive customers’ requirements for maximum data reliability.
These solutions undergo the strictest levels of testing and are certified according to automotive-industry standards, including but not limited
to IATF 16949 Certification, APQP, PPAP, IMDS, AEC-Q100, product selection/features and joint validation tests depending on project
support and according to customer request.

Industrial Enterprise Edition
The Industrial Enterprise Edition consists of comprehensive flash storage solutions that are designed, built, and tested/validated according
to rigid standards for reliable operation and long product lifetime with high-quality service. They comply with ATP’s Enterprise ReadinessStandards (ERS), including stringent testing and enhanced firmware features, to meet edge computing requirements of reduced latency,
better cost-effectiveness, real-time analytics, and accessibility. They are ideal as boot drives but are also suitable for storage and hybrid
usage. They are capable of handling higher endurance and reliability requirements while working in harsher environmental conditions forextended periods without supervision.

55

Solutions & Technologies
As a technology-driven company, ATP is committed to developing innovative solutions and harnessing the most advanced technologies
to ensure that our products deliver the highest levels of data integrity, reliability and retention for mission-critical applications.

 Life Monitor/S.M.A.R.T.*
Provides a user-friendly interface for monitoring the healthstatus and life expectancy of a flash product.

 Hardware-based Power Loss Protection
This hardware-based power failure protection prevents data
loss during a power loss event by ensuring that the lastread/write/erase command is completed, and data is storedsafely in non-volatile flash memory. Select NVMe modules
and SATA SSDs feature a new microcontroller unit
(MCU)-based design that allows the PLP array to perform
intelligently in various temperatures, power glitches
and charge states to protect both device and data.

 Advanced Wear LevelingManages the reads and writes across blocks evenly
to optimize the overall life expectancy of a flash product.

 End-to-End Data Path Protection

Ensures error checking and correction as data moves
from the host to the storage device controller
and vice versa. By covering the entire data path,
end-to-end protection guarantees integrity at any
point during data transfer.

* Compatibility and support may vary by platform or operating system.
 Flash solutions
 DRAM solutions
 Flash/DRAM solutions
 Value-added solutions56

 AutoRefresh
Monitors the error bit level in every operation. Before the error
bit in a block reaches or exceeds the preset threshold value,
AutoRefresh moves the data to a healthy block, thus preventing
the controller from reading blocks with too many error bits
and averting read disturbance and data corruption.

 Firmware-based Power Loss Protection
The firmware-based power failure protection effectively
protects data written to the device prior to power loss.
After the host receives a signal from the device that the WRITE
operation has been successfully completed, newly written
as well as previously written data are protected even if
a sudden power loss occurs.

 Dynamic Data Refresh
Runs automatically in the background to reduce the risk of read
disturbance and sustain data integrity in seldom-accessed
areas by sequentially scanning the user area flag record
without affecting the read/write operation. The data that has
been completely moved to another block will be readand compared with the source data to ensure data integrity.

 Auto-Read Calibration
As program/erase (P/E) cycles increase, memory cells age
and cause voltage shifts that lead to high bit error rates(BER) when predefined read thresholds are fixed.
The Auto-Read Calibration (ARC) function reduces BER
and enhances reliability by adjusting/calibrating the readthresholds. ARC is supported by the TLC LDPC controller.

 Secure Erase
A sanitization solution made especially for SSDs and memory
cards making sure that sensitive data is not recoveredor retrieved if the SSD or memory card needs to be disposedor repurposed. By making sure that no remnant of sensitive dataremains, Secure Erase is the ideal solution for governmentand business applications with intense security requirements.

 Dynamic Thermal ThrottlingThis mechanism provides a delicate balance between
performance and temperature instead of dramatic
performance reduction. Temperature sensors continuously
detect the device temperature. After sophisticated FW
transactions, the performance gradually declines,
and the temperature is adjusted.

 TCG Opal 2.0
TCG Opal Security Subsystem Class (SSC) 2.0 is a setof specifications for self-encrypting drives that presenta hierarchy of security management standards to secure datafrom theft and tampering. Security features include
hardware-based data encryption, pre-boot authentication(PBA) and AES-128/256 data encryption to protect
the confidentiality of data at rest.

 Industrial Temperature
Operational stability in extreme temperaturesfrom -40°C to 85°C.

 Wide Temp DRAM Modules
These modules use unique ATP testing and technologies
to enable support for industrial temperature operating
ranges from -40°C to 85°C but at lower price points
than modules with native industrial grade ICs.

 SiP (System in Package)
Manufacturing process that encapsulates all exposedcomponents to provide protection and shielding.

 Vibration-Proof BGA Package
Soldered-down solutions can withstand vigorous shaking
and are resistant against vibrations for reliable performanceeven during grueling operations.

57

S Anti-Sulfur Resistors
ATP DRAM modules and NAND flash storage products offer
an anti-sulfur resistor option to prevent the corrosive effectsof sulfur contamination, guaranteeing continued dependable
performance for a long time.

 Chamfering PCB Design

For NAND flash storage products, the entire drive,
including firmware, user and spare areas, is thoroughly
tested to ensure that there are no bad blocks.
DRAM products also undergo complete testing,covering PHY and controller, including meta/mappingand data caching areas.

TDBI involves subjecting ATP DRAM modules to various
temperatures, power cycling, voltages and other stressconditions within a certain period. It aims to cause weakICs to fail so they can be screened out, thus making surethat the modules contain only the most robust ICs.

* Compatibility and support may vary by platform or operating system.
 Flash solutions
 DRAM solutions
 Flash/DRAM solutions
 Value-added solutions

58

30µ”-thick gold plating of the DRAM contact optimizes
signal transmission quality between the connector
and DRAM modules.

 Joint Validation

 Test During Burn-In (TDBI)

Protects electronic circuits with a coating of the chemicalcompound Parylene to resist dust, chemical contaminants,
extreme temperature, moisture and corrosion.

 Thicker Gold Finger

Chamfering refers to the process of “beveling or tapering”
the connector edges for easier insertion into the memoryslots. The bevel is done at specific angles, typicallyat around 40° to 50°.

 Complete Drive Test

 Conformal CoatingATP conducts compatibility/function tests with client-supplied
host devices and systems, to proactively detect and minimize
failures that may not be caught in production tests,
thus improving overall quality.

Secure Erase

TCG Opal 2.0

PCIe® Gen4 NVMe M.2 2280 SSD Superior▲▲Premium▲

Superior▲

Form Factor

PCIe® Gen3 NVMe M.2 2280 /
2242 / 2230 SSD

Product
Line

Life Monitor/ Firmware-based Hardware-based
S.M.A.R.T.
Power Loss
Power Loss
Protection
Protection

AutoRefresh Advanced Wear Dynamic Data
Leveling
RefreshEnd-to-End
Data Path
Protection

Auto-Read
Calibration

Value
PCIe® Gen4 NVMe U.2 SSD

PCIe Gen3 NVMe U.2 SSD®

Anti-Sulfur
Resistors
S

Conformal
Coating

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

Dynamic
Thermal Throttling

Industrial
Temperature

SiP

Vibration-Proof
BGA Package▲

Premium▲▲

Superior▲▲

Premium▲▲

Joint Validation

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

▲

Superior

SATA III M.2 2280 / 2242 SSD Superior

Complete
Drive Test

▲

Value

SATA III 2.5" SSD

Premium▲

Superior▲

Value

SATA III mSATA SSD

Premium▲

Superior▲

Value
USB 3.2 NANODURA DualUSB 2.0 NANODURA

USB 2.0 eUSBSuperior
Premium
Superior
Premium▲▲▲

Superior▲▲▲(micro)SD/(micro)SDHC/(micro)SDXC Card

Premium▲

Superior▲

PCIe Gen4
NVMe CFexpress Card

Premium▲▲

Superior▲▲®

Cfast Card
Compact Flash Card

Premium▲▲▲

Premium▲

Please refer to pages 56-58.

▲

▲

▲

▲

▲

▲

▲

▲

▲

Superior▲▲▲

Superior▲

Value
PCIe® Gen3 NVMe M.2
Type 1620 HSBGA SSD▲

Premium

Premium
e.MMC

▲

▲

Premium
Value▲: Customization option available on a project basis.

▲

▲

▲

▲

▲

▲

Complete Flash Portfolio
Form Factor

PCIe® Gen4 NVMe
M.2 2280 SSD

Product Line
NamingInterface

Capacity

NAND

Sequential Performance
MB/s (up to)
Read

Write

Operating Temperature(°C )N651Si / N651Sc

PCIe G4 x4240 GB to 3.84 TB

3D TLC

17,930

6,450

6,050

-40 to 85 / 0 to 70

N601ScPCIe G4 x4240 GB to 1.92 TB

3D TLC

5,700

6,450

6,050

0 to 70

16,000

3,150

2,670

-40 to 85

PCIe G3 x4

40 GB to 640 GB

3D TLC(pSLC mode)
3D TLC(pSLC mode)

21,300

3,150

2,820

-40 to 85

PCIe Gen3 NVMe N650Si / N650Sc
M.2 2280 SSD
N600Si / N600Sc

PCIe G3 x4

120 GB to 960 GB

3D TLC

4,640

3,420

3,050

-40 to 85 / 0 to 70

PCIe G3 x4

120 GB to 3.84 TB

3D TLC

10,600

3,420

3,050

-40 to 85 / 0 to 70

N750Pi
N700Pi®

PCIe G3 x4

40 GB to 320 GB

N600Vi / N600Vc

PCIe G3 x4

120 GB to 960 GB

3D TLC

2,880

2,600

1,870

-40 to 85 / 0 to 70

PCIe® Gen3 NVMe
M.2 2242 SSD N600Vi / N600Vc

PCIe G3x4

120 GB to 960 GB

3D TLC

2,880

2,600

1,870

-40 to 85 / 0 to 70

N700Pi / N700Pc

PCIe G3 x4

40 GB to 160 GB

3D TLC(pSLC mode)

4,280

2,000

1,600

-40 to 85 / 0 to 70

N600Vi / N600Vc

PCIe G3 x4

120 GB to 480 GB

3D TLC

768

2,050

1,550

-40 to 85 / 0 to 70

PCIe G4 x4

320 GB to 2.56 TB

3D TLC(pSLC mode)

157,000

6,100

6,000

-40 to 85

PCIe G4 x4960 GB to 7.68 TB

3D TLC

10,370

6,000

5,500

-40 to 85 / 0 to 70

PCIe G3 x4

960 GB to 7.68 TB

3D TLC

21,000

3,100

1,400

-40 to 85

19,200560

520-40 to 85

12,800560

520-40 to 85

PCIe® Gen3 NVMe
M.2 2230 SSD

N751Pi
PCIe® Gen4 NVMe
U.2 SSD
N651Si / N601Sc
PCIe® Gen3 NVMe
U.2 SSD

SATA IIIM.2 2280 SSD

SATA IIIM.2 2242 SSD

SATA III2.5” SSD

SATA IIImSATA SSD

N600Si
A750PiSATA 6Gb/s

80 GB to 320 GB

A700PiSATA 6Gb/s

80 GB to 320 GB

3D TLC(pSLC mode)
3D TLC(pSLC mode)

A650Si / A650Sc

SATA 6Gb/s

240 GB to 960 GB

3D TLC

4,655

560

520

-40 to 85 / 0 to 70

A600Si / A600Sc

SATA 6Gb/s

120 GB to 960 GB

3D TLC

2,792

560

510

-40 to 85 / 0 to 70

A600VcSATA 6Gb/s

32 GB to 1 TB

3D TLC

2,792

560

525

0 to 70

A800PiSATA 6Gb/s

8 GB to 64 GB

SLC

5,333

530

400

-40 to 85

9,600

560

520

-40 to 85

A700PiSATA 6Gb/s

40 GB to 160 GB

3D TLC(pSLC mode)
3D TLC(pSLC mode)

6,400

560

520

-40 to 85

A650Si / A650Sc

SATA 6Gb/s

240 GB to 960 GB

3D TLC

4,655

560

525

-40 to 85 / 0 to 70

A600Si / A600Sc

SATA 6Gb/s

120 GB to 480 GB

3D TLC

1,396

560

510

-40 to 85 / 0 to 70

A600VcSATA 6Gb/s

32 GB to 1 TB

3D TLC

2,792

560

525

0 to 70

A800PiSATA 6Gb/s

8 GB to 256 GB

SLC

21,333520

420-40 to 85

38,400560

520-40 to 85

25,600560

520-40 to 85

A750PiSATA 6Gb/s

40 GB to 160 GB

A750PiSATA 6Gb/s

80 GB to 640 GB

A700PiSATA 6Gb/s

80 GB to 640 GB

3D TLC(pSLC mode)
3D TLC(pSLC mode)

A650Si / A650Sc

SATA 6Gb/s

240 GB to 1,920 GB

3D TLC

9,310

560

525

-40 to 85 / 0 to 70

A600Si / A600Sc

SATA 6Gb/s

120 GB to 1,920 GB

3D TLC

5,585

560

520

-40 to 85 / 0 to 70

A600VcSATA 6Gb/s

32 GB to 1 TB

3D TLC

2,792

560

525

0 to 70

A800PiSATA 6Gb/s

8 GB to 128 GB

SLC

10,667530430-40 to 85

9,600

560

520

-40 to 85

6,400

560

520

-40 to 85

A750PiSATA 6Gb/s

40 GB to 160 GB

A700PiSATA 6Gb/s

40 GB to 160 GB

3D TLC(pSLC mode)
3D TLC(pSLC mode)

A650Si / A650Sc

SATA 6Gb/s

240 GB to 960 GB

3D TLC

4,655

560

525

-40 to 85 / 0 to 70

A600Si / A600Sc

SATA 6Gb/s

120 GB to 480 GB

3D TLC

1,396

560

510

-40 to 85 / 0 to 70

A600VcSATA 6Gb/s

32 GB to 1 TB

3D TLC

2,792

560

525

0 to 70

USB 3.2
NANODURA Dual

B600ScUSB 3.2

32 GB to 128 GB

3D TLC

84

270

85

0 to 70

USB 2.0
NANODURA

B800PiUSB 2.0

512 MB to 8 GB

SLC

192

31

21

-40 to 85

B600ScUSB 2.0

4 GB to 8 GB

MLC

9.6

26

10

0 to 70

B800PiUSB 2.0

1 GB to 32 GB

SLC

1,548

36

25

-40 to 85

B600ScUSB 2.0

8 GB to 32 GB

MLC

38.4

25

19

0 to 70

USB 2.0
eUSB* Under highest Sequential write value. May vary by density, configuration and applications.

60

Reliability
TBW (max) *Form Factor

Product Line
Naming

S800PiSD/
SDHC/
SDXC Card

Interface

HS mode / UHS-I

Capacity

512 MB to 8 GB

NAND

SLC

Reliability
TBW (max) *Sequential Performance
MB/s (up to)

Operating Temperature
(°C )

Read

Write

192

68

39

-40 to 85

10,16097

82-40 to 85 / -25 to 85

S750Pi / S750Pc

UHS-I

16 GB to 128 GB

S700Pi / S700Pc

UHS-I

8 GB to 64 GB

3D TLC(pSLC mode)
3D TLC(pSLC mode)

582

98

80

-40 to 85 / -25 to 85

S650Si / S650Sc

UHS-I

64 GB to 512 GB

3D TLC

1,400

97

76

-40 to 85 / -25 to 85

S600Si / S600Sc

UHS-I

32 GB to 128 GB

3D TLC

77

94

55-40 to 85 / -25 to 85

S600ScUHS-I

8 GB to 16 GB

MLC

19

68

23

-25 to 85

S600Si / Sc

UHS-I

8 GB to 256 GB

MLC / 3D TLC

307

96

65

-40 to 85 / -25 to 85

S800PiHS mode / UHS-I

512 MB to 8 GB

SLC

192

68

39

-40 to 85

10,16097

82-40 to 85 / -25 to 85

S750Pi / S750Sc

UHS-I

16 GB to 128 GB

microSD/
S700Pi / S700Sc
microSDHC/
microSDXC Card S650Si / S650Sc

UHS-I

8 GB to 64 GB

3D TLC(pSLC mode)
3D TLC(pSLC mode)

1,164

96

76

-40 to 85 / -25 to 85

UHS-I

64 GB to 512 GB

3D TLC

1,400

97

76

-40 to 85 / -25 to 85

S600Si / S600Sc

UHS-I

32 GB to 256 GB

3D TLC

153

97

62

-40 to 85 / -25 to 85

S600ScUHS-I

8 GB to 32 GB

MLC

38

68

24

-25 to 85

Product Line
NamingInterface

Capacity

NAND

Reliability
TBW (max) *Form Factor

PCIe® Gen4 NVMe
CFexpress Card
CFast Card

CompactFlash Card

Sequential Performance
MB/s (up to)

Operating Temperature
(°C )

Read

Write

4,410

3,500

3,100

-40 to 85

N751Pi

PCIe G4 x2

40 GB to 320 GB

3D TLC(pSLC mode)

N651Si / N601Sc

PCIe G4 x2

128 GB to 1 TB

3D TLC

1,000

3,500

3,200

-40 to 85 / 0 to 70

A800PiSATA 6Gb/s

8 GB to 32 GB

SLC

2,667

500

300

-40 to 85

I800Pi

UDMA 0~4

512 MB to 32 GB

SLC

1,280

61

55

-40 to 85

I700ScUDMA 0~6

8 GB to 16 GB

Pseudo SLC

128

110

80

0 to 70

I600ScUDMA 0~6

16 GB to 32 GB

MLC

38

108

46

0 to 70* Under highest Sequential write value. May vary by density, configuration and applications.

61Form Factor

e.MMC

Product Line
NamingCapacity

NAND

Sequential Performance
MB/s (up to)
Read

Write

1,213

300

240

Operating Temperature(°C )E700Paa

v5.1, HS400

8 GB to 64 GB

3D MLC(pSLC mode)

E600Saa

v5.1, HS400

16 GB to 128 GB

3D MLC

824

300

170

-40 to 105(Extended Industrial Grade)-40 to 105(Extended Industrial Grade)-40 to 105(AEC-Q100 Grade 2)-40 to 105(AEC-Q100 Grade 2)

E700Piav5.1, HS400

8 GB to 64 GB

3D MLC(pSLC mode)

1,320

300

240

-40 to 85(AEC-Q100 Grade 3)

E600Siav5.1, HS400

16 GB to 128 GB

3D MLC

824

300

170

-40 to 85(AEC-Q100 Grade 3)

E750Piv5.1, HS400

10 GB to 21 GB

3D TLC(pSLC mode)

1,034

295

215

-40 to 85(Industrial Grade)

E700Piv5.1, HS400

8 GB to 64 GB

3D MLC(pSLC mode)

1,320

300

240

E700Piv5.1, HS400

10 GB to 40 GB

3D TLC(pSLC mode)

1,364

290

225

-40 to 85(Industrial Grade)-40 to 85(Industrial Grade)

E650Siv5.1, HS400

32 GB to 64 GB

3D TLC

70

270

215

-40 to 85(Industrial Grade)

E600Siv5.1, HS400

16 GB to 128 GB

3D MLC

824

300

170

-40 to 85(Industrial Grade)

E600Siv5.1, HS400

32 GB to 128 GB

3D TLC

52

290

225

-40 to 85(Industrial Grade)

E750Pcv5.1, HS400

10 GB to 21 GB

3D TLC(pSLC mode)

1,034

295

215

-25 to 85(Commercial Grade)

E700Pcv5.1, HS400

10 GB to 40 GB

3D TLC(pSLC mode)

1,364

290

225

E650Scv5.1, HS400

32 GB to 64 GB

3D TLC

70

270

215

-25 to 85(Commercial Grade)-25 to 85(Commercial Grade)

E600Vcv5.1, HS400

32 GB to 128 GB

3D TLC

52

290

225

E600Vcv5.1, HS400

32 GB

3D TLC

8.3

250

135

-25 to 85(Commercial Grade)-25 to 85(Commercial Grade)

PCIe G3 x4

40 GB to 160 GB

3D TLC(pSLC mode)

4,280

2,000

1,600

-40 to 85 / 0 to 70

PCIe G3 x4

120 GB to 480 GB

3D TLC

768

2,050

1,550

-40 to 85 / 0 to 70

E700Pav5.1, HS400

8 GB to 64 GB

E600Sav5.1, HS400

16 GB to 128 GB

3D MLC

824

300

170

1,213

300

240

* Under highest Sequential write value. May vary by density, configuration and applications.

62

Reliability
TBW (max) *3D MLC(pSLC mode)

N700Pi / N700Pc
PCIe Gen3
NVMe M.2 Type 1620
HSBGA SSD
N600Vi / N600Vc®

Interface

118.75 mm

30.0 mm42.0 mm80.0 mm100.0 mm

Product Dimensions (Size) Comparison

22.0 mm69.85 mm

33.75 mm

M.2 2280 SSD

M.2 2242 SSD

M.2 2230 SSD

U.2 SSD / 2.5” SSD

E1.S SSD (Coming Soon)

36.4 mm28.0 mm36.9 mm
26.6 mm

12.2 mm

12.2 mm

NANODURA DUAL

USB Drive

38.5 mm36.4 mm36.4 mmeUSB

32.0 mmmSATA SSD

12.2 mm
NANODURA

42.8 mm24.0 mm

CFexpress Card

Compact Flash Card

CFast Card

SD Card10.0 mm13.0 mme.MMC

15.0 mmmicroSD Card

20 mm

42.8 mm11.5 mm29.6 mm11.0 mm29.85 mm34.0 mm22.0 mm50.8 mm22.0 mm

9.0 mm

16.0 mm

M.2 Type 1620 HSBGA SSD

63

From our humble beginnings with only two desks in a business suite in Silicon Valley,
we have established ourselves as global leaders in storage and memory.
Today, over 70% of companies listed on Gartner’s Magic Quadrant report for Primary Storage,
Data Center and Cloud Computing, and WAN-Edge Infrastructure consider ATP as a strategic supplier.

Follow us on
ATP Website

www.atpinc.com

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