DATA SHEET
10EYP-DBR-0633-00010-2000-BFW01-0000
Revision 0.74
2017-07-05

SINGLE FREQUENCY LASER DIODES
Distributed Bragg Reflector Laser
General Product Information
ProductApplication

633 nm DBR Laser

HeNe Laser Replacementwith hermetic 14-Pin Butterfly Housing (RoHS compliant)Spectroscopy, Metrology, Sensing

including Monitor Diode, Thermoelectric Cooler and Thermistor

Please note: The use of the laser in

Collimated beam

3D trackers is protected by patents

Absolute Maximum Ratings
SymbolUnitminTS°C-40

Operational Temperature at CaseTC°C-2075

Operational Temperature at Laser Chip

TLD°C

-525

Forward Current

IFmA

180

Reverse Voltage

VRV2

Output PowerPoptmW

12

TEC Current

ITECA

1.1

TEC Voltage

VTECV

2.8

Parameter
Storage Temperaturetypmax85

Measurement Conditions / Comments
Stress in excess of one of the Absolute Maximum
Ratings may damage the laser. Please note that adamaging optical power level may occur although themaximum current is not reached. These are stressratings only, and functional operation at these or any
other conditions beyond those indicated underRecommended Operational Conditions is not implied.

Recommended Operational Conditions
Parameter

SymbolUnit

min

Operational Temperature at Case

Tcase°C

050

Operational Temperature at Laser Chip

TLD°C

1018

Forward Current

IFmA

Output Power

PoptmW

typ100max

Measurement Conditions / Comments
measured by integrated Thermistor

160
10Characteristics at TLD = 15° at BOL
Parameter
Center Wavelength

SymbolUnit

mintypmax

Cnm

632

633

634

Linewidth (FWHM)

MHz

Sidemode Supression Ratio

SMSR

dB

Temperature Coefficient of Wavelengthd / dTnm / K

0.045

Current Coefficient of Wavelengthd / dInm / mA0.001

Measurement Conditions / Comments

1Popt = 10 mW

30© All rights reserved by eagleyard Photonics GmbH. This data sheet will be electronically administered and is subject to change without notice. Uncontrolled copy when printed.

eagleyard Photonics GmbH

Rudower Chaussee 2912489 Berlin GERMANY

fon +49. 30. 6392 4520
fax +49. 30. 6392 4529

info@eagleyard.com
www.eagleyard.com

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DATA SHEET
10EYP-DBR-0633-00010-2000-BFW01-0000
Revision 0.74
2017-07-05

SINGLE FREQUENCY LASER DIODES
Distributed Bragg Reflector Laser
Characteristics at TLD = 15° at BOLSymbol

Parameter
Laser Current @ Popt =Unitcont'dmin

typ0.1

0.4

0.7
120

ILDmA

Slope Efficiency

W/AThreshold Current

IthmA

80

Divergence parallel (FWHM)

°0.1

10 mW

max
160



°0.1

Beam Diameter horizontal (1/e2)

dmm

0.7

1.02dmm

0.6

1.0(1/e )Degree of Polarization

DOP%

Ith drift may occur, no violation of the max. value
parallel to the base plate of the housing (see p. 3)

Divergence perpendicular (FWHM)
Beam Diameter vertical

Measurement Conditions / Commentsperpendicular to base plate of the housing (see p. 3)
parallel to the base plate of the housing (see p. 3)
perpendicular to base plate of the housing (see p. 3)
Popt = 10 mW; E field perpendicular to base plate

90

Monitor Diode
Parameter

SymbolUnit

min

Monitor Detector Responsivity

Imon / Popt

μA/mW

10min

typmax

Measurement Conditions / Comments

400

UR = 5 V

Thermoelectric Cooler
Parameter

SymbolUnittypmax

Measurement Conditions / Comments

Current

ITECA

0.7

1.1

Popt = 10 mW, ΔT = 40 K

Voltage

UTEC

V

1.7

2.8

Popt = 10 mW, ΔT = 40 K

Power Dissipation (total loss at case)

PlossW

0.40.5

Popt = 10 mW, ΔT = 40 K

Temperature Difference

TK60

Popt = 10 mW, ΔT = |Tcase - TLD|

Thermistor (Standard NTC Type)
Parameter

SymbolUnit

ResistanceRk

Beta Coefficientmintypmax

Measurement Conditions / Comments

10TLD = 25° C

3892

R1 / R2 = e (1/T1 - 1/T2) at TLD =-3

0° … 50° C

3Steinhart & Hart Coefficient AA

1.1293 x 10Steinhart & Hart Coefficient B

B

2.3410 x 10 -4

T: temperature in Kelvin

Steinhart & Hart Coefficient CC

8.7755 x 10 -8

R: resistance at T in Ohm

1/T = A + B(ln R) + C(ln R)© All rights reserved by eagleyard Photonics GmbH. This data sheet will be electronically administered and is subject to change without notice. Uncontrolled copy when printed.

eagleyard Photonics GmbHRudower Chaussee 2912489 Berlin GERMANY

fon +49. 30. 6392 4520
fax +49. 30. 6392 4529

info@eagleyard.com
www.eagleyard.com

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DATA SHEET
10EYP-DBR-0633-00010-2000-BFW01-0000
Revision 0.74
2017-07-05

SINGLE FREQUENCY LASER DIODES
Distributed Bragg Reflector Laser
Pin Assignment
1

Thermoelectric Cooler (+)

14

Thermoelectric Cooler (-)

2

Thermistor

13Case3

Photodiode (Anode)12

not connected

4

Photodiode (Cathode)11

Laser Diode (Cathode)5

Thermistor

10

Laser Diode (Anode)6

not connected9

not connected7

not connected8

not connected

top view

All 14 pins are isolated from case.

Package Drawings

E field (vertical)

AIZ-15-0729-0947© All rights reserved by eagleyard Photonics GmbH. This data sheet will be electronically administered and is subject to change without notice. Uncontrolled copy when printed.

eagleyard Photonics GmbHRudower Chaussee 2912489 Berlin GERMANY

fon +49. 30. 6392 4520
fax +49. 30. 6392 4529

info@eagleyard.com
www.eagleyard.com

3/4

DATA SHEET
10

EYP-DBR-0633-00010-2000-BFW01-0000
Revision 0.74
2017-07-05

SINGLE FREQUENCY LASER DIODES
Distributed Bragg Reflector Laser
Typical Measurement Results
Output Power vs. Current

Spectra at Specified Optical Output Power

Performance figures, data and any illustrative
material provided in this specification are typical andmust be specifically confirmed in writing by eagleyard
Photonics before they become applicable to any
particular order or contract. In accordance with theeagleyard Photonics policy of continuous
improvement specifications may change without
notice.

Unpacking, Installation and Laser Safety

Unpacking the laser diodes should only be done at electrostatic safe workstations (EPA). Though protection
against electro static discharge (ESD) is implemented in the laser package, charges may occur at surfaces.
Please store this product in its original package at a dry, clean place until final use. During deviceinstallation, ESD protection has to be maintained.
Laser Emission

The DBR laser is sensitive against optical feedback, so an optical isolator may be required in order to avoid
any disturbance of the emission spectrum. Operating at moderate temperatures on proper heat sinks willcontribute to a long lifetime of the diode.

LASER RADIATIONAVOID EYE OR SKIN EXPOSURE
TO DIRECT OR SCATTERED RADIATION

CLASS 4 LASER PRODUCTWAVELENGTH 633 nm
MAX. OUTPUT POWER 12 mW

Avoid direct and/or indirect exposure to the free running beam. Collimating and focussing the free runningbeam with optics as common in optical instruments will increase threat to the human eye.

IEC-60825-0

Performance figures, data and any illustrative material provided in this specification are typical and must be
specifically confirmed in writing by eagleyard Photonics before they become applicable to any particularorder or contract. In accordance with the eagleyard Photonics policy of continuous improvement
specifications may change without notice.

LASER RADIATIONAVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATIONGaAs SEMICONDUCTOR LASER DIODE

12 mW MAX OUTPUT AT 633 nm

CLASS IV LASER PRODUCT
Complies with 21 CFR 1040.10 and 1040.40© All rights reserved by eagleyard Photonics GmbH. This data sheet will be electronically administered and is subject to change without notice. Uncontrolled copy when printed.

eagleyard Photonics GmbH

Rudower Chaussee 2912489 Berlin GERMANY

fon +49. 30. 6392 4520
fax +49. 30. 6392 4529

info@eagleyard.com
www.eagleyard.com

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