Oct. 5, Tuesday
9:00

9:30

9:50

10:10

Opening Remarks:
Naoteru Shigekawa, Osaka City University. / Tadatomo Suga, Meisei University, JapanMC:
N. Shigekawa

SAB for photonic
applications
Co-Chairs:
E. Higurashi
N. Nishiyama

10:25

5A-01

High Luminous Light-Emitting Diodes for Automotive Headlamps Fabricated Using Surface Activated Bonding
Masatsugu Ichikawa, Nichia Corporation, Japan

5A-02

Tailor-made Laser Chip by Bonding for High Energy Laser System
Arvydas Kausas, Institute for Molecular Science, Japan

5A-03* Improved Process for Room-temperature Bonding Multiple GaAs Thin Plates to Develop Wavelength-conversion Devices
Yuki Takahashi, Chuo University, Japan

5A-04

LNOI photonics fabricated on Si wafer by room temperature bonding
Kaname Watanabe, Kyushu University, Japan

BRAEK

10:40-10:55

10:55

11:15

11:30

New processes andEquipments for SAB
Co-Chairs:
M. Fujino
Y. Ohno

11:45

5A-05

Sputtering Technique to Fabricate Smooth Surface Oxide Film for Room Temperature Bonding
Takayuki Saito, Canon ANELVA Corporation, Japan

5A-06

Surface smoothing of Au plated films by template stripping towards low-temperature bonding for 3D integration
Le Hac Huong Thu, National Institute of Advanced Industrial Science and Technology (AIST), Japan

5A-07* Surface preparation of metal films by gas cluster ion beams using organic acid vapor for wafer bonding
Soichi Hanahara, University of Hyogo, Japan

5A-08* New Long Life Fast Atom Beam Source for Surface Activated Bonding
Ryo Morisaki, Nagoya University, Japan

LUNCH

12:05-13:25

13:25

5P-01

Quantification of Wafer Bond Strength of Silicon Nitride under Controlled Atmosphere
Kai Takeuchi, Meisei University, Japan

5P-02

Interfacial Analysis of Bonded SiCN Interfaces by Neutron Reflectometry
Masahisa Fujino, National Institute of Advanced Industrial Science and Technology (AIST), Japan

5P-03

Direct bonding of GaN and Si substrates using wet cleaning processes
Shoya Fukumoto, National Institute of Advanced Industrial Science and Technology (AIST), Japan

Hydrophilic Bonding
13:45

Chair:
R. Takigawa

14:00

BRAEK

14:15-14:30

5P-04

Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature
Yutaka Ohno, Tohoku University, Japan

5P-05* High temperature stability of p -Si/p-diamond heterojunction diodes
Yota Uehigashi, Osaka City University, Japan

5P-06

Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions
Takashi Matsumae, National Institute of Advanced Industrial Science and Technology (AIST), Japan

15:20

5P-07

* Fabrication of GaN/diamond structure for efficient thermal management of power device
Ryo Kagawa, Osaka City University, Japan

15:35

5P-08

[Invited] GaN-HEMTs on Diamond prepared by Room-Temperature Bonding Technology
Shuichi Hiza, Mitsubishi Electric Corporation, Japan

14:30+14:50

15:05

Bonding of diamondand semiconductors
Co-Chairs:
T. Shimatsu
K. Tanabe

BRAEK

15:55-16:10

16:10

17:10

Keynote 1
Co-Chairs:
N. Toyoda
N. Shigekawa5P-09[Keynote] Progress of diamond substrate development
Hong-Xing Wang, Xi’an Jiaotong University, China

5P-10[Keynote] Heat Transport across Interfaces for the Optimization of Heat Sinking in Device Applications
Martin Kuball, University of Bristol, United Kingdom

End of session

18:10* Student presentations

Oct. 6, Wednesday
9:00

Bonding of Wide
Bandgap
Semiconductors

9:20

6A-01

6A-02
Chair:
T. Shimatsu

9:35

6A-03

Fabrication of Ga 2O3/Si direct bonding interface for high power device appliations
Jianbo Liang, Osaka City University, Japan
Hydrophilic bonding of SiC substrate dipped in hydrofluoric acid with Ga 2O3 film through atomically thin intermediate layer
Takashi Matsumae, National Institute of Advanced Industrial Science and Technology (AIST), Japan* Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding
Kazuki Sawai, Osaka City University, Japan

BREAK

9:50-10:05

10:05

6A-04

Impacts of Misalignment on Bonding Strength of Cu-Cu Hybrid Bonding
Shunsuke Furuse, Sony Semiconductor Solutions Corporation, Japan

10:25

6A-05

Sputtered Copper Nitride-Copper Nitride Direct Bonding
Liangxing Hu, Nanyang Technological University, Singapore

6A-06* Void Evolution in Cu-Cu BondsHung-Che Liu, National Yang Ming Chiao Tung University, Taiwan

6A-07* Microstructure analysis and tensile strength of low temperature Cu bonds using highly-<111> Cu
Jia Juen Ong, National Yang Ming Chiao Tung University, Taiwan

11:20

6A-08

* Bonded interface properties of Nb direct bonding with Si intermediate layer for 3D interconnection of superconducting devices
Yuta Takahashi, Saitama University, Japan

11:35

6A-09

* Nanostructural Analysis of Al/beta-Gallium Oxide Interface Fabricated Using Surface Activated Bonding
Zexin Wan, Osaka City University, Japan

10:45

11:05

Metal direct bonding
Co-Chairs:
F. Inoue
T. Fukushima

LUNCH

11:50-13:20

6P-01

Chip-to-Chip/Wafer Three-Dimensional Integration of 2.5 mm-sized Neuron and Memory Chips by Via-Last Approach
Mariappan Murugesan, Tohoku University, Japan

6P-02* Bonding Position Accuracy of Direct Transfer Bonding, Chip-on-wafer Bonding for III-V/Si Heterogeneous Integration
Hiromu Onodera, Tokyo Institute of Technology, Japan

6P-03* Selective Transfer of Si Thin-Film Microchips for Fluidic Self-Assembly
Yutaka Fujita, Kyoto University, Japan

14:10

6P-04

Electrodeposition of Indium for Low Temperature 3D Stacking
Fumihiro Inoue, imec, Belgium

14:25

6P-05

Ultra-broadband Integrated Capacitive Silicon Interposer assembled with SnBi Eutectic Solder
Charles Muller, Murata Integrated Passive Solutions, France

13:20

13:40

13:55

3D integration
processes
Co-Chairs:
H. Ishida
N. Toyoda

BRAEK

14:45-15:00

15:00

6P-06

Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro
mechanical systems sensors, Yoshihiro Koga, Tohoku University, Japan

6P-07

Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer
Shingo Kariya, National Institute of Advanced Industrial Science and Technology, Japan

6P-08

Uniform resist film on chip substrate prepared by bonding film coated on sheet
Tomoya Onuki, Toyota Technological Institute, Japan

6P-09

Investigation on Low-temperature Temporary Bonding for Microfluidic Devices in Lifescience Applications
Yang Han, imec, Belgium

MEMS applications
15:20

15:35

Co-Chairs:
R. Takigawa
H. Takagi

15:50

BRAEK

16:05-16:20

16:20

17:20

18:20

Keynote 2
Co-Chairs:
M. Fujino
M. Sasaki

6P-10[Keynote] Anodic Bonding a Low Temperature Bonding Method for Processed MEMS and CMOS Wafers
Roy Knechtel, Schmalkalden University of Applied Sciences, Germany

6P-11[Keynote] The unique properties of SiCN as bonding material for hybrid bonding
Serena Iacovo, imec, Belgium

End of session

Oct. 7, Thursday
10:15

10:30

Characterization ofbonding processesand structures

10:45

11:00

Co-Chairs:
H. Takagi
K. Tanabe

11:15

7A-01

* Preliminary Study of Atomic Diffusion Bonding in Air using Ag films
Yuki Watabe, Tohoku University, Japan

7A-02* Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films
Taichiro Amino, Tohoku University, Japan

7A-03* Fabrication and Characterization of GaN/Diamond bonding interface
Ayaka Kobayashi, Osaka City University, Japan

7A-04* Delamination analysis of stacked via in high-density multilayer Printed Wiring Boards by FEA
Moe Nozaki, Graduate School of Shibaura Institute of Technology, Japan

7A-05* Reproduction Analysis of Fatigue Crack Networks in Sn-Ag-Cu Die attach Joint by FEA
Hiroki Kanai, Graduate School of Shibaura Institute of Technology, Japan

LUNCH

11:30-13:00

7P-01

Room Temperature Bonding of Semiconductor Materials Based on Mo/Au Interlayer
Kang Wang, Xian Jaotong University, China

7P-02

Atomic Diffusion Bonding using AlN films
Miyuki Uomoto, Tohoku University, Japan

7P-03

Fabrication of InP/SiC structure using surface activated direct bonding
Yunhan Fan, Kyushu University, Japan

13:50

7P-04

* Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates
Kenya Yonekura, Osaka City University, Japan

14:05

7P-05

* Fabrication of Ga 2O3/3C-SiC direct bonding for efficient surface heat dissipation
Hiromu Nagai, Osaka City University, Japan

13:00

13:20
Power and RFApplications
13:35

Co-Chairs:
K. Tanabe
F. Inoue

BREAK

14:20-14:35

14:35

14:55

LowTemperaturebonding for opticalapplications

15:10

15:30

Co-Chairs:
E. Higurashi
T. Taira

15:45

Multijunction Solar Cells using Bonding Technology with Pd Nanoparticle Array and Adhesive Material
Kikuo Makita, National Institute of Advanced Industrial Science and Technology (AIST), Japan

7P-07* Upconversion Material-Mediated Semiconductor Bonding
Naoki Sano, Kyoto University, Japan

7P-08

Atomic Diffusion Bonding using Y 2O3 and ZrO2 films
Takehito Shimatsu, Tohoku University, Japan

7P-09

Atomic Diffusion Bonding of Wafers with Oxide Underlayers using Thin Hf Films for Optical Applications
Gen Yonezawa, Tohoku University, Japan

7P-10

Towards Hybrid Optical Components via Non-Planar Direct Bonding
Pascal Birckigt, Fraunhofer Institute for Applied Optics and Precision Engineering, Germany

End of session

16:05

16:05

7P-06

H. Takagi

ANNOUNCEMENTS

Satellite Session
Oct. 11, Monday
OPENINNG. Satellite Session

13:20-13:30

13:30-14:30 Keynote session 1
Co-Chairs:
N. Shigekawa
Y. Ohno14:30-15:30

Takehito Shimatsu, Tohoku University, Japan
11P-01[Keynote] Interface reactions and thermal transport in heterogeneous heterostructures
Mark Goorsky, UCLA, USA

11P-02[Keynote] Low temperature bonding by extension of the SAB concept
Tadatomo Suga, Meisei University, Japan

BRAEK

15:30-16:00

16:00-17:00 Keynote session 2
Co-Chairs:
T. Fukushima
F. Inoue
17:00-18:00

18:00-18:10

18:10

11P-03[Keynote] Die to wafer for photonic and 3D applications
Loic Sanchez, LETI, France

11P-04[Keynote] From Hot SAB bonding to organic hydrophilic bonding
Frank Fournel, LETI, France

AWARD CEREMONY
Hideki Takagi, AIST, Japan

CLOSING REMARKS
Naoteru Shigekawa, Osaka City University