ᇹᵏᵖ‫ׅ‬ᵬᵟᵧᵱᵲင‫ܖ‬ᡲઃἧỻὊἻἲ᧙ᙱኺฎᡲӳ˟ ᵐᵎᵎᵖ࠰ᵐஉᵏᵑଐ‫ډ‬ᑣέᇢᅹ‫ܖ‬২ᘐ‫ܖٻ‬ᨈ‫ܖٻ‬ཋឋо঺ᅹ‫ܖ‬ᄂᆮᅹ᣽‫܇‬ཋࣱᅹ‫ࡈᜒܖ‬௶ ʁᨺẐἏἧἚἰἘἼỴἽửဇẟẺૼẲẟஊೞႆήἙἢỶἋ ẑᵏᵌᵐᵌᵑᵌᵒᵌᄂᆮܴኰʼểᄂᆮᏑ୎ஊೞႆήἚἻὅἊἋἑஊೞႆή‫֥ࠢف‬ểஊೞἻἰὅἾὊἈὊᵡᵬᵲᙐӳ˳ửဇẟẺἧỵὊἽἛỺἱἕἉἹὅἙἢỶἋஊೞႆήἚἻὅἊἋἑ ᵆᵭᵪᵣᵲᵇ

ஊೞᩓမјௐ‫׹‬ἚἻὅἊἋἑ
ᵆᵭᵤᵣᵲᵇஊೞᵣᵪᵆᵭᵣᵪᵇஊೞႆήἚἻὅἊἋἑ
Organic Light-Emitting Transistor(OLET)

cathodeETLemission layer
HTL
ITO
hQ
substratedrainsourcepentacene
insulatorgate

hQ
sourcedrain- -䋫 䋫insulatorgate䋫䋫 䋫䋫 䋫-----䋫䋫-䋫-䋫 䋫- -䋫ನᡯầἉὅἩἽ˯ἅἋἚἩἿἍἋ᭗ᩓ්දλầӧᏡᵟᶋᶀᶇᶎᶍᶊᵿᶐ ᵭᵪᵣᵲỉ˺ᙌsourcedrain䋫䋫source

Al-Li
Au
BP3T
SiO2Si䋫䋫

unipolar OFET- - - - - -draingate

ambipolar OFETgate
䋭

LUMO

bepro

Al-Li
Al-LiAu䋫

HOMOeobpr

Au

100 PmAu-10metal souece

ID (PA)

VD= -50 V

source-probedrain-probeshadow mask

-10 V
sample0V
VD (V)-50

vacuum pumpgate

[K. Yamane, H. Yanagi, A. Sawamoto and S. Hotta, Appl. Phys. 45, L650 (2006)]ᵭᵪᵣᵲỉᩓ්ᵋᩓ‫ן‬Ẇႆήỉཎࣱ
VG< -100 V, VD< -100 V

0Vg= -100 V-100ID (PA)0010 mm-150 V-200-300-200 V
Ph= 2㬍10-1 cm2V-1s-1-200

light-emission at Al-Li drainAu

50 Pm-100
VD (V)-500p-type unipolar I-V curvedrain
Al-Li-150

Al-LiAu䋭 䋭BP3T䋫 䋫source䋫 䋫䋫 䋫 䋫 䋫 䋫 䋫

SiO2
Sielectrons are not transportedgateἢἕἧỳ‫ޖ‬ỉ਴λỆợỦᵿᶋᶀᶇᶎᶍᶊᵿᶐᬝѣdrain pentacene
Au
Al-Li
BP3T
n-triacontane
SiO2Si (gate)

SiO2 defect with O-H groups traps electrons
HHOOSiSiHHe-O

SiOOOOO OblockOOSiSi-H
O+ 1/2 H2SiOOOOO Osource

gate

0-50VVVVgg==-50n-triacontane (C30H62) layer-100 V-100 V-10-150 V

ID (㱘A)electron injection layer of pentacene
LUMO-200V-200 V-200 V-30

䋭
BP3TAl-Lipentacene-40㱘䌨䋽6-9 㬍10-3 cm2V-1s-1
㱘e䋽3-4 㬍10-2 cm2V-1s-10V

䋫HOMO-50-200Au-150 V-150-100-500

VD (V)
ambipolar carrier transportᵟᶋᶀᶇᶎᶍᶊᵿᶐ ᵭᵤᵣᵲỉἄὊἚᩓ‫ן‬ỆợỦႆήСࣂ-200 V

GND------[a. u. ]-30-20hole

Light Intensity

ID [㱘A]-40

electron-200 V

GND----++++-90 V-200 V㪄㪈㪍㪇㪄㪈㪉㪇㪄㪏㪇
VG [V]㪄㪋㪇㪇Au-80 V-100㪄㪉㪇㪇

Al-Li BP3T++--GND++++++

Dependence of ID and light intensity on VG-100 Vϐኽӳႆήˮፗử ᵴᵥᴾỆợụСࣂỂẨỦḵᩓಊỆợỦෞήử৮С᭗݅ࡇỉỿἵἼỴểႆήử཰ẟɟഏΨ᪸؏Ệ᧍ẳᡂỜỤủỦஊೞἾὊἈὊ ἒỶỼὊἛᵆᵭᵪᵢᵇ

50 Pm

ஊೞႆή‫ࠢف‬ểஊೞἾὊἈὊ
EDFA

blue LD ஊೞҞ‫˳ݰ‬ἾὊἈ ίᵭᵱᵪᵇӧᙻᵋᡈហ‫ٳ‬ή࠘؏ίᵎᵌᵓ῍ᵎᵌᵖ᷈ᶋὸࡊ࡜ࠬ࠴࠶ࠢࡈࠔࠗࡃ ஊೞή‫ ֥ࠢف‬ίᵭᵭᵟᵇ‫׹ݱ‬Ὁᨼᆢ҄ὉἧἾỿἉἨἽ

GaN⍹⧷ࡈࠔࠗࡃࠕࠢ࠮ࠬ♽ ၮᐙ♽
1.3 Pm 1.55 Pm
GaAlAsGaInAsP ήἧỳỶἢ‫֥ࠢف‬ὉᵣᶐἛὊἩήἧỳỶἢ‫֥ࠢف‬᭗Мࢽᵆ῍ᵑᵎᶂᵠᵇᵊᴾ˯ᩃ᪦
ἧỳỶἢᧈᾉᵓ῍ᵓᵎᶋᴾὉήἧỳỶἢἻἰὅ‫֥ࠢف‬ίᵤᵰᵟᴾὸᛔ‫ݰ‬Ἳἰὅ૝ʏίᵱᵰᵱὸྵᝋ˓ॖỉඬᧈỂМࢽἧỳỶἢᧈᾉૠᶉᶋήử᧍ẳᡂỜỦஊೞ˯ഏΨನᡯ0-Dimension

1-Dimension

2-Dimension

Molecular Dot

Molecular Needle

Molecular Layerbis-styrylbenzene(BSB)

p-sexipheny(p-6P)

bis-biphenylyl thiophene(BP1T)ᵠᵮᵏᵲኽ୒ẦỤỉ‫ࠢف‬ႆή
BP1TFluorescence micrograph of BP1T crystal
Photoluminescence spectra of BP1T crystal.

[H. Yanagi, A. Yoshiki, S. Hotta and S. Kobayashi, Appl. Phys. Lett. 83, 1941 (2003)]

1466
cm-11605cm-1ᵠᵮᵏᵲኽ୒ẦỤỉᛔ‫ݰ‬σᯚἻἰὅ૝ʏίᵱᵰᵰᵱᵇ

PL spectra of BP1T crystal excited with YAG-OPO

Changes in Oem as a function of Oex.

Ἳἰὅ૝ʏήλ‫ݧ‬ήA1 (1466 cm-1)

B1 (1605 cm-1)

ᵢᵤᵲᵋᵫᵭᚘምỆợỦἻἰὅ෇ࣱễЎ‫܇‬ਰѣ
Stimulated Resonance Raman Scattering (SRRS)ࣇኽ୒Ẇ໯σਰ֥ɦẆ˓ॖỉඬᧈỂ᭗Мࢽஊೞή‫֥ࠢف‬ẆஊೞἻἰὅἾὊἈὊἧỵὊἽἛỺἱἕἉἹὅἙỵἋἩἾỶ ᵆᵤᵣᵢὸ
Spindt-type metal (Mo) tipᨗಊ ίᵧᵲᵭὸᖩή˳ἄὊἚᨗಊ

Anisotropic etching Si tipe-ᩓ‫܇‬ỺἱἕἑMIM, MIS tunnel junction
Carbon nanotube (CNT) ᭗ᩓ්݅ࡇΥ-Χ Nitrides ᭗‫ࣱܭܤ‬

CNT electron emitterSamsung(1999)
Chemical Vapor Deposition
Screen Printing
CNT CompositeỺἻἋἚἰὊἩἼỽὊἇὊඥᵆᣣାᎿᬺ)ỆợỦᵡᵬᵲᙐӳ˳ỉ˺ᙌ
1. CNT/elastomer precursor

2. Removal of elastomer

3. CNT/ metal composite

Mixing in two-roll mill
Elastomer Al powder CNT(NR, EPDM)

Heat-treatment in N2

Capillary penetration of Al
Heat-treatment in N2
Al plate䉣䊤䉴䊃䊙䊷䈻CNT䉕ဋ৻ಽᢔ

500 nm䉣䊤䉴䊃䊙䊷䈲ᾲಽ⸃䈚CNT䈱䊈䉾䊃䊪䊷䉪䈏ᱷ䉎䉣䊤䉴䊃䊙䊷䈏Al䈮⟎឵䈘䉏䉎

10㱘m[T. Noguchi, A. Magario, S. Fukazawa, S. Shimizu, J. Beppu and M. Seki, Mater. Trans. 45, 602 (2004)]ᵡᵬᵲᵍᵟᶊᙐӳ˳ỉನᡯ
OCNTN

SEM image of CNT/Al composite
㨪200.5 Pm

EELS mapping of CNT/Al composite

MWNT(13 nm)

0 nm

AlAlCNT᭗ᩓ්݅ࡇ

๟ㄝ⇇㕙ጀᵟᶊᴾ൐஬မ᩿‫ޖ‬
AlN‫ܭܤ‬ễᵧᵧᵧᵋᵴᴾҞ‫˳ݰ‬ᩓ‫܇‬Ỻἱἕἑஊஓễᩓ‫܇‬Ỻἱἕἑ[H. Yanagi, Y. Kawai, T. Kita, S. Fujii, Y. Hayashi, A. Magario and T. Noguchi. Jpn. J. Appl. Phys. 45, L650 (2006)]

ᵡᵬᵲᵍᵟᶊᙐӳ˳ửဇẟẺἧỵὊἽἛỺἱἕἉἹὅἙἢỶἋ
phosphor/ITO

CNT/Al300cd/m2

light emission

10Pm

spacersand-paper rubbing
vacuum300cd/m2

10-1
Current Density (A/cm2)

10-2
10-3
10-4
10Pm

10-5

shot-blast with glass particles

10-6

400cd/m2

10-7
10-8
10-9
10-10

0

5
1015
Electric Field (V/Pm)

2010Pmpolishing with diamond powderᵡᵬᵲᵍỺἻἋἚἰὊᙐӳ˳ửဇẟẺἧỵὊἽἛỺἱἕἉἹὅἙἢỶἋ

450 cd/m2

Current density (A/cm2)

10-2
10-3

DWCNT

REDSWCNT

800 cd/m2

MWCNT
10-4
10-5
ITO anode
10-6

phosphor
grid electrode

CNT/NR

800 cd/m2

10-7
10-8
0246810
Electric Field (V/Pm)

GREEN

12BLUEἧἾỿἉἨἽᵤᵣᵢ
[T. Kita, Y. Hayashi, O. Wada, H. Yanagi, Y. Kawai, A. Magario, T. Noguchi. Jpn. J. Appl. Phys. 45, L1186 (2006)]

ቡቋቤὊ ἏἧἚἰἘἼỴἽửဇẟẺૼẲẟႆήἙἢỶἋ ὼṲ ᵏᵌᴾஊೞႆήἚἻὅἊἋἑᩓ‫܇‬ἚἻἕἩ৮С‫ޖ‬ểᩓ‫܇‬දλ‫ޖ‬ỉ਴λỆợụẆ˯Ў‫܇‬ᔕბኒஊೞἚἻὅἊἋἑỂɲಊࣱỿἵἼỴදλႆήửܱྵẲẺẇṲ ᵐᵌᴾஊೞႆή‫֥ࠢف‬ểஊೞἻἰὅἾὊἈὊ᷌σࢫỼἼἆἰὊኽ୒ỉᛔ‫ݰ‬σᯚἻἰὅ૝ʏίᵱᵰᵰᵱὸྵᝋỆؕỀẪ᭗Мࢽỉ໯σਰ֥ἾὊἈὊ˺ဇửᙸЈẲẆἯἼἰὊᕓᐏửဇẟẺἩἻἋἓἕἁἻἰὅἾὊἈὊồࣖဇ‫᧏ޒ‬ẲẺẇṲ ᵑᵌᴾᵡᵬᵲᙐӳ˳ửဇẟẺἧỵὊἽἛỺἱἕἉἹὅἙἢỶἋᵡᵬᵲᵍỺἻἋἚἰὊᙐӳ˳ἉὊἚửဇẟềᵧᵲᵭἾἋ҄ểἧἾỿἉἨἽ҄ầӧᏡễ᩿ͨᩓ‫્܇‬Ј‫׹‬ἧỵὊἽἛỺἱἕἉἹὅἙἢỶἋίᵱᵣᵣᵢᵇử᧏ႆẲẺẇ