APAC	  SILICIDE	  2013	  PROGRAM	  (updated 2013/7/29)

th27 	  July	  	  13:00—13:10 Opening address, H. Tatsuoka, Shizuoka University, Chairperson, APAC-SILICIDE 2013
Session I: Plenary
Session Chairs: Dr．M. Lourenco, Univ. of Surrey,

Prof. Y. Maeda, Kyushu Inst. Tech. (Kyutech)

13:10—14:00 [27-PM-I-1] Plenary
Silicon-silicide quasi-zero dimensional structures for silicon based photonics, opto- andthermoelectronics
N. G. Galkin, Far Eastern Branch of Russian Academy of Science, Russia
14:00—14:40 [27-PM-I-2] Invited
Skyrmion crystal in transition metal monosilicides
Y. Onose,
University of Tokyo, Japan
14:40—15:00 [27-PM-I-3]
NaSi and Si Clathrate Prepared on Si Substrate
T. Kume, F. Ohashi, T. Sugiyama, T. Ban, S. Sasaki and S. Nonomura,
Gifu University, Japan
Break 15:00—15:20
Session II: Silicide Basics
Session Chairs: Prof. Y. Onose, Univ. of Tokyo,

Prof. T. Iida, Tokyo Univ. of Sci.

15:20—16:00 [27-PM-II-1] Invited
Electronic and optical properties of semiconducting silicides
D. B. Migas,
Belarusian State University of Informatics and Radioelectronics, Belarus
16:00—16:30 [27-PM-II-2] Student Invited
Growth kinetics and interface structure of copper silicides studied by atom probe
tomography,
M. Ibrahim, University of Münster, Germany
16:30—16:50 [27-PM-II-3]
Energy gap of alkaline-earth-metal digermanides SrGe2 and BaGe2
M. Imai,
National Institute for Materials Science, Japan
16:50—17:10 [27-PM-II-4]
Internal Stress and Volume Defect in Silicide Films and their Effects on the Film Growth
Process
A.S. Gouralnik1, S.A. Dotsenko1,2, N.G. Galkin1,2, V.S. Plotnikov2, E.V. Pustovalov2, A.I.
Cherednichenko1,2, A.K. Gutakovski3 and M.A. Neklyudova3,
1
Far Eastern Branch of Russian Academy of Science, Russia
2Far-East Federalrst University, Russia
3
Siberian Branch of Russian Academy of Sciences, Russia
17:10—18:30 Poster Session I

Session Chairs: Prof. Y. Nakamura, Osaka Univ.,Dr. M. Imai, NIMS

28th	  July	  Session III: Thin film growth, Electric and Optical Properties, Silicide Devices
Session Chairs: Prof. D. B. Migas, Belarusian State Univ.,
Prof. M. Suzuki, Kyoto, Univ.
8:30— 9:10 [28-AM-III-1] Invited
Routes to silicon LEDs in the near- to mid-infrared
M. A. Lourenço and K. P. Homewood,
University of Surrey, UK
9:10— 9:30 [28-AM-III-2]
β-FeSi2 Nanocrystallites Emersion During Si Layer Overgrowth: Experimental Facts and aModel
E. A. Chusovitin1, A. V. Shevlyagin1,2, D. L. Goroshko1,2, N. G. Galkin1,2 and A. K.
Gutakovskiy3,
1
Far Eastern Branch of Russian Academy of Science, Russia
2
Far Eastern Federal University, Russia
3
Siberian Branch of Russian Academy of Sciences, Russia
9:30— 9:50 [28-AM-III-3]
Al-induced crystallized Si and Ge thin films on insulators as epitaxial seeds for silicidematerials
K. Toko1, K. Nakazawa1, R. Numata1, N. Usami2 and T. Suemasu1
1
University of Tsukuba, Japan
2
Nagoya University, Japan
9:50— 10:10 [28-AM-III-4]
Conduction Properties of β-FeSi2 Epitaxial Films with Low Carrier Density
Y. Terai*, N. Suzuki, K. Noda and Y. Fujiwara,
1
Osaka University, Japan*Present address, Kagoshima University, Japan
10:10—10:30 [28-AM-III-5]
Growth, structure, optical and electrical properties of Si/2D Mg2Si/Si(111) double
heterostructures and Schottky diodes on their base
K. N. Galkin1, N. G. Galkin1,2, L. Dozsa3, S. A. Dotsenko1,2, I. M. Chernev1,2, S. V.
Vavanova1, L. Dobos3 and B. Pecz3,1
Far Eastern Branch of Russian Academy of Science, Russia
2
Far Eastern Federal University, Russia
3
Hungarian Academy of Sciences, Hungary
Break 10:30—10:50
Session IV: Silicide Green Technology; Solar Cells
Session Chairs: Dr. Y. Ando, Osaka Univ., Prof. Y. Yoshitake, Kyushu Univ.
10:50—11:30 [28-AM-IV-1] Invited
Engineering Thin Film β-FeSi2/Si Heterojunctions to Harvest Solar Energy
S. L. Liew, Y. Chai, H. R. Tan, H. K. Hui, G. K. Dalapati and D. Z. Chi
Agency for Science, Technology and Research, Singapore
11:30—11:50 [28-AM-IV-2]

Mechanism of Strain Relaxation in BaSi2 Epitaxial Films on Si(111) Substrates during
Post-Growth Annealing and Application for Film Exfoliation
K. O. Hara1,2, N. Usami1,2, K. Nakamura3, R. Takabe3, M. Baba3, K. Toko3 and T.
Suemasu2,3,1
Nagoya University
2
Japan Science and Technology Agency, Japan
3
University of Tsukuba, Japan
11:50—12:10 [28-AM-IV-3]
Germanium-doped Czochralski silicon: a novel material for solar cells
M. Arivanandhan1, R. Gotoh2, K. Fujiwara2, S. Uda2, Y. Hayakawa1 and M. Konagai3,
1
Shizuoka University, Japan2Tohoku University, Japan
3
Tokyo Institute of Technology, JapanLunch Break 12:10—13:30
Session V: Silicide Green Technology; Thermoelectrics
Session Chairs: Dr. S. L. Liew, IMRE, A-STAR, Dr. K. Yamaguchi, Japan Atomic Energy Agency
13:30—14:10 [28-PM-V-1] Invited
Direct thermal-to-electric energy conversion using environmentally benign Mg2Si forreducing automotive CO2 emission
T. Iida, T. Sakamoto, K. Nishio, Y. Kogo, N. Hirayama and Y. Takanashi,Tokyo University of Science, Japan
14:10—14:40 [28-PM-V-2] Student Invited
Methods to grow homogenous SiGe bulk crystal for thermoelectric application
M.Omprakash1, M.Arivanandhan1, R. Arun Kumar 1, H.Morii1, T.Aoki1, T.Koyama1,Y.Momose1, H.Ikeda1, H.Tatsuoka1,Y.Okano2, T.Ozawa3, Y.Inatomi4, S.M. Babu5 andY.Hayakawa1
1 Shizuoka University, Japan
2 Osaka University, Japan
3 Shizuoka Institute of Science and Technology, Japan
4 Japan Aerospace Exploration Agency, Japan
5 Anna University, India
14:40—15:00 [28-PM-V-3]
Preparation and Thermoelectric Properties of Mg2Si0.9-xSnxGe0.1
S. Tada1,3, Y. Isoda2 , H. Udono3, H. Fujiu1 ,S. Kumagai1 and Y. Shinohara2
1Mitsuba Corporation, Japan
2
National Institute for Materials Science, Japan3
Ibaraki University, Japan
15:00—15:20 [28-PM-V-4]
Low temperature preparation of CrSi2, MnSi1.7+δ, and CoSi using a Na flux and their
thermoelectric properties
T. Yamada and H. Yamane
Tohoku University, Japan
15:20—16:40 Poster Session IISession Chairs: Prof. Y. Terai, Kagoshima Univ.,
16:40—20:30 Banquet

Ushiku Chateau

Prof. H. Udono, Ibaraki Univ.

29th	  July	  Session VI: Nano-Silicides & Silicide Spintronics
Session Chairs: Prof. N. G. Galkin, Russian Academy of Sciences,Prof. H. Tatsuoka, Shizuoka Univ.

8:30— 9:10 [29-AM-VI-1] Invited
Control of Silicide and Germanide Growth in 1D Nanotemplate as Contacts
Y. Huang,
University of California, Los Angeles, USA
9:10— 9:40 [29-AM-VI-2] Student Invited
Kinetic competition model and phase manipulation of Ni silicide formations in modified SiNW templates
Y. Chen and Y. Huang,University of California, Los Angeles, USA
10:20—10:40 [29-AM-VI-3]
Formation Mechanism of Transition Metal Silicide-Based Nanocomposites: The
Solid-State Exfoliation Reaction Route
H. Itahara, S.-Y. Oh, T. Ohsuna and H. Imagawa,Toyota Central R&D Labs., Inc., Japan
10:00— 10:20 [29-AM-VI-4]
Fabrication of periodic arrays of silicide nanopillars by using self-assembled poly- styrene
nanosphere template and oblique deposition technique
M. Suzuki, Y. Kaneko, K. Nakajima and K. Kimura,
Kyoto University, Japan
Break 10:20—10:40
Session Chairs: Prof. Y. Huang, UCLA,

Prof. K. Takarabe, Okayama Univ. Sci.

10:40—11:20 [29-AM-VI-5] Invited
Generation of spin current using ferromagnetic silicide
Y. Ando1, E. Sikoh1, K. Hamaya2 and M. Shiraishi1
1
Osaka University, Japan
2
Kyushu University, Japan
11:20—11:40 [28-AM-VI-6]
Solid evidence for magnetic moment enhancement in micro-particles of Mn11Si19
K. Hammura1, H. Udono2 and T. Aono2,
1
Hitachi Cambridge Laboratory, Cavendish Laboratory, UK2
Ibaraki University, Japan
11:40— 12:00 [29-AM-VI-7]
Epitaxial growth of stacked β-FeSi2 nanodots on Si substrates and their thermoelectric
properties
M. Isogawa1, Y. Nakamura1, 2, J. Kikkawa1,* , S. Takeuchi1 and A. Sakai1,1Osaka University, Japan
2
PRESTO-Japan Science and Technology Agency, Japan* Present address: National Institute for Materials Science, Japan
12:00—12:20 [29-AM-VI-8]
An increase of absorbance in the near infrared region for solar cells based on hydrogenatedsilicon with embedded cubic Mg2Si nanolayers
N. G. Galkin1, K. N. Galkin1, I. M. Chernev1, R. Fajgar2, T. H. Stuchlikova3, J. Stuchlik3

1

Far Eastern Branch of Russian Academy of Science, Russia
Institute of Chemical Process Fundamentals of the Academy of Sciences of the CzechRepublic, v. v. i., Czech Republic
3
Institute of Physics of Academy of Sciences of the Czech Republic, v. v. i., Czech Republic2

12:20—12:30 Closing Remarks,

T. Iida, Tokyo University of Science, Japan