APAC	
  SILICIDE	  2013	
  Poster	  session	
  (updated 2013/7/29)

Poster Session I
Session Chairs: Prof. Y. Nakamura, Osaka Univ.,Dr. M. Imai, NIMS

[27-P1]
Processing of nanoscale Fe-Si composite powders and formation of β-FeSi2 by electric discharge plasma
activated sintering
I. Matsumoto1, H. Katsumata1, I. Azumaya2, T. Takahashi2, H. Souma2 and M. Ishiyama2,
1
Meiji University,Japan
2
Elenix, Inc., Japan[27-P2] Withdrawn
Annealing Time Influence on Fabricating β-FeSi2 Thin Film
X. Xiong, Q. Chen, R. Ma, Q. Xie and J. Zhang
University of Guizhou, China[27-P3]
Optimization of substrate pretreatment and deposition conditions for epitaxial growth of β-FeSi2 film on
Si (100)
K. Yamaguchi1, S. Hamamoto2 and K. Hojou1
1
Japan Atomic Energy Agency, Japan
2
Ibaraki University, Japan[27-P4]Microstructure analysis of β-FeSi2 grown on Ag-coated Si(001) substrate
S. Motomura1, K. Hayashi1, M. Itakura1 and K. Akiyama2
1
Kyushu University, Japan
2
Kanagawa Industry Technology Center, Japan[27-P5]
Near-infrared photoluminescence from the eutectic mixture of β-FeSi2 and Si
Y. Hara, K. Sato and K. Nakaoka
Ibaraki National College of Technology, Japan[27-P6]
Photoluminescence enhancement from β-FeSi2 on Ag-coated Si
K. Akiyama1.3, S. Motomura2, G. Hayashi2, H. Funakubo3 and M. Itakura2
1
Kanagawa Industrial Technology Center, Japan
2
Kyushu University, Japan
3
Tokyo Institute of Technology, Japan[27-P7]
Photoluminescence Enhancement of β-FeSi2 Nanocrystals Grown from Metastable γ Phase
T. Hirata, Y. Kawakubo, Y. Noguchi, and Y. Maeda
Kyushu Institute of Technology, Japan[27-P8]Enhancement of Near IR Sensitivity of Silicon-Silicide Based Photodetectors
D. L. Goroshko1,2, E. A. Chusovitin1, A. V. Shevlyagin1,2, M. V. Bozhenko2, R. I. Batalov3, R. M.
Bayazitov3 and N. G. Galkin1,2
1
Far Eastern Branch of Russian Academy of Science, Russia
2
Far Eastern Federal University, Russia

[27-P9]
Electroluminescence properties of p-Si/β-FeSi2 NCs/.../n-Si Mesa Diodes with Em- bedded Multilayers of
β-FeSi2 Nanocrystallites
E. A. Chusovitin1, D. L. Goroshko1,2, A. V. Shevlyagin1,2, N. G. Galkin1,2, T. S. Shamirzaev3 and A. K.
Gutakovskiy3
1
Far Eastern Branch of Russian Academy of Science, Russia
2
Far Eastern Federal University, Russia
3
Siberian Branch of Russian Academy of Sciences, Russia[27-P10] Withdrawn
Objective Certitude of the β-FeSi2/Si Inverse Heterojunction Fabrication
X. Xiong, Q. Chen, X. Zhen, S. Kang, L. Zhang, Q. Xie and J. Zhang
University of Guizhou, China[27-P11]
Characteristics of Mesa Structural Near-Infrared n-Type Nanocrystalline FeSi2/p-Type Si Heterojunction
Photodiodes
S. Funasaki1, R. Iwasaki1, N. Promros2 and T. Yoshitake1
1
Kyushu University, Japan
2
King Mongkut’s Institute of Technology, Thailand[27-P12] Withdrawn
Structure stability and ferromagnetism of the carbon alloying Fe3Si compound from first principles
calculations
R. Ma, J. Huang, X. Xiong, M. Fan, W. Yan and Q. Xie
Guizhou University, China[27-P13]
Current-induced Magnetization Switching in Fe3Si/FeSi2/Fe3Si Trilayer film
K. Sakai1,2, Y. Noda1, D. Tsumagari1, K. Takeda3, and T. Yoshitake1
1
Kyushu University, Japan
2
Kurume National College of Technology, Japan
3
Fukuoka Institute of Technology, Japan[27-P14]
Epitaxial growth of Ge layers on Fe3-xCoxSi
M. Kawano, S. Yamada, M. Miyao, and K. Hamaya
Kyushu University, Japan[27-P15]
RBS Study of Disordering of Fe3-xMnxSi/Ge(111) Heteroepitaxial Interfaces
Y. Noguchi1, T. Hirata1, Y. Kawakubo1, K. Narumi2, S. Sakai2, and Y. Maeda1,2
1
Kyushu Institute of Technology, Japan
2
Advance Science Research Center, Japan[27-P16]
Ion Beam Analysis of Quaternary Heusler Alloy Co2(Mn1-xFex)Si(111) Epitaxially Grown on Ge(111)
Y. Kawakubo1, Y. Noguchi1, T. Hirata1, K. Narumi2, S. Sakai2, S. Yamada3, K. Hamaya3, M. Miyao3 andYoshihito Maeda1,2,
1
Kyushu Institute of Technology, Japan
2
Japan Atomic Energy Agency, Japan
3
Kyushu University, Japan[27-P17]Synthesis of Mg2Si bulk crystal by vertical gradient freezing method using KCl as liquid encapsulant
R. Nakagawa1, H. Katsumata1, S. Hashimoto2 and S. Sakuragi2
1
Meiji University, Japan2

Union Materials Inc., Japan[27-P18]
Thermoelectric properties and durability at elevated temperatures of impurity doped n-type Mg2Si
Y. Oto, T. Iida, T. Sakamoto, R. Miyahara, A. Natsui, K. Nishio, Y. Kogo, N. Hirayama and Y.
TakanashiTokyo University of Science, Japan[27-P19]
B and Sb Doping Effects on Thermoelectric Properties of Magnesium Silicide
M. Kubouchi, K. Hayashi and Y. Miyazaki
Tohoku University, Japan[27-P20]High-pressure X-ray Diffraction Study and Thermoelectric Properties of Mg2Si
Y. Mori1, Y. Kaihara1, S. Nakamura2, T. Yoshino3 and K. Takarabe1
1
Okayama University of Science, Japan
2
Tsuyama National College of Technology, Japan
3
Okayama University, Japan[27-P21]
Study on Sintering Effects on Grain Size, Electrical Resistivity and Seebeck Coefficient ofThermoelectric Mg2Si
S. Nakamura1, Y. Mori2 and K. Takarabe2
1
Tsuyama National College of Technology, Japan
2
Okayama University of Science, Japan[27-P22]
Solid phase growth of Mg2Si thin films on Si(100) and their optical, structural and electrical properties
T. Hashimoto, H. Katsumata, K. Sato, R. Nakagawa and S. Uekusa
Meiji University, Japan[27-P23]
Solid-phase growth of Mg2Si by annealing in inert gas atmosphere
T. Ikehata, T. Ando, T. Yamamoto, R. Takagi, N. Sato and H. Udono
1
Ibaraki University, Japan[27-P24] Withdrawn
Solid-State Synthesis of Single phase Mg2Si Films on Si Substrates deposited at various sputtering
powersQ. Xiao, Q. Xie and Q. Chen
Guizhou University, China[27-P25]
Epitaxial Growth of Mg2Si Films by RF Magnetron Sputtering Method
A. Katagiri1, K. Akiyama1,2, S. Ogawa1, M. Matsushima1 and H. Funakubo1
1
Tokyo Institute of Technology, Japan
2
Kanagawa Industrial Technology Center, Japan[27-P26]
Spectral characterization of Mg2Si pn-junction diode depended on RTA periods
M. Takezaki1, Y. Yamanaka1, M. Uchikoshi2 and H. Udono1
1
Ibaraki University, Japan
2
Tohoku University, Japan[27-P27]
Synthesis of Mg2Si nanorod arrays by the heat treatment of Si nanorod arrays under Mg vapor

W. Li1, K. Nakane1, M. Suzuki2 and H. Tatsuoka1
1
Shizuoka University, Japan
2
Kyoto University, Japan	
  [27-P28]
Precipitate Phases inside Magnesium Silicide Droplets prepared by Pulsed Laser Deposition on Unheated
Silicon Substrate
H. Sugawara, A. Izutsu, T. Igarashi and G. Kubo
Tokyo Metropolitan University, Japan[27-P29]
Performance of Columnar Grained Silicides As Li-ion Battery CathodeX. Meng1, P. Yuan1, G. Shao1,2, H. Tatsuoka3, J. Hu1
1Zhengzhou University, China
2
University of Bolton, UK
3
Shizuoka University, Japan

Poster Session II
Session Chairs: Prof. Y. Terai, Kagoshima Univ., Prof. H. Udono, Ibaraki Univ.
[28-P1]
Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates
M. Baba1, K. O. Hara3, N. Saito2, N. Yoshizawa2, N. Usami3,4, K. Toko1 and T. Suemasu1,4
1
University of Tsukuba, Japan
2
National Institute of Advanced Industrial Science and Technology, Japan
3
Nagoya University, Japan
4
CREST-Japan Science and Technology Agency, Japan[28-P2]Formation and characterizations of BaSi2 films on glass substrate by RF sputtering
N. A. A. Latiff1, T. Yoneyama1, T. Shibutami2, K. Matsumaru2, K. Toko1 and T. Suemasu1,3
1 University of Tsukuba, Japan
2 Tosoh Corporation, Japan
3 CREST-Japan Science and Technology Agency, Japan[28-P3]Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecularbeam epitaxy
R. Takabe1, M. Baba1, K. Nakamura1, W. Du1, M. A. Khan1, S. Koike1, K. Toko1, K. Hara2, N. Usami2,3
and T. Suemasu1,3
1
University of Tsukuba, Japan
2
Nagoya University, Japan
3
CREST-Japan Science and Technology Agency, Japan[28-P4]Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization
method on glass structures
R. Numata1, K. Toko1, N. Usami2 and T. Suemasu1
1
University of Tsukuba, Japan
2
Nagoya University, Japan[28-P5]
Evaluation of diffusion coefficients of n-type impurities in MBE-grown BaSi2 epitaxially layers
N. Zhang1, K. Nakamura1, M. Baba1, K. Toko1, and T. Suemasu1, 2

12

University of Tsukuba, Japan
CREST-Japan Science and Technology Agency, Japan[28-P6]
Investigation on the Surface Morphologies and Tunneling Properties of BaSi2/Si hetero-junction for BaSi2
solar cell applications
W. Du1, M. Baba1, R. Takabe1, N. Zhang1, K. Toko1, N. Usami2,3 and T. Suemasu1,3
1
University of Tsukuba, Japan
2 Nagoya University, Japan
3 CREST-Japan Science and Technology Agency, Japan[28-P7]Fabrication of n+-BaSi2/p+-Si Tunnel Junction on Si(001) Surface for characterization of photoresponse
properties of BaSi2 epitaxial films
S. Koike1, M. Baba1, K. Nakamura1, K. M. Ajmal1, W. Du1, K. Toko1 and T. Suemasu1, 2
1
University of Tsukuba, Japan
2
CREST-Japan Science and Technology Agency, Japan[28-P8]Investigation of electrical conductivities and anti-reflection properties of AZO formed by RF sputteringfor BaSi2 solar cells
N. Shimada1, M. Baba1, K. Nakamura1, K. Toko1 and T. Suemasu1,2
1
University of Tsukuba, Japan
2
CREST-Japan Science and Technology Agency, Japan[28-P9]Studies on Thermal Stability of Higher Manganese Silicide by Means of in situ XRD and TG-DTA
Y. Kikuchi, T. Nakajo, K. Hayashi and Y. Miyazaki
Tohoku University, Japan[28-P10]
Solution Growth and Optical Characterization of MnSi1.7
M. Iioka, D. Ishida, S. Kojima and H. Udono
Ibaraki University, Japan[28-P11]Syntheses of manganese related nanostructures using MnCl2 and Si powders
E. C. Meng, W. Li and H. Tatsuoka
Shizuoka University, Japan[28-P12] Withdrawn
Study on the electronic structure and optical properties of Cr1-xVxSi2
S. Zhou1, W. Yan1, 2, C. Zhang1, Z. Zhang1, Q. Xie2, R. Ma2
1Anshun University, China
2
Guizhou University, China[28-P13]
Formation and optical properties of semiconducting Ca silicide films on Si substrates
D. A. Bezbabny1,2, K. N. Galkin1, S. A. Dotsenko1,2, N. G. Galkin1,2, E. Zielony3, R. Kudrawiec3 and J.
Misiewicz3
1
Far Eastern Branch of Russian Academy of Science, Russia
2
Far Eastern Federal University, Russia
3
Wroclaw University of Technology, Poland[28-P14]
Effect of sulphur addition on growth evolution of MoSi2 nanosheets synthesized by molten salt method
using MoS2 as a template

D. Ishikawa, W. Li and H. Tatsuoka
Shizuoka University, Japan[28-P15]
Optical measurements of Ba8Ga16Ge30 clathrate grown by self-flux method
S. Kojima1, M. Imai2, T. Kume3, K. Tanigaki4, H. Tajima5 and H. Udono1
1
Ibaraki University, Japan
2
National Institute for Materials Science, Japan3
Gifu University, Japan
4
Tohoku University, Japan
5
University of Tokyo, Japan[28-P16] Withdrawn
Structural characteristics of liquid SiC during quenching process
W. Yan1,2, T. Gao1, X. Guo1,2, Q. Xie1
1
University of Guizhou, China
2
University of Anshun, China[28-P17]Structural and optical properties of magnetron sputtered and pulsed beam annealed Ge/Si layers
K. Galkin1, R. Batalov2, R. Bayazitov2, H. Novikov2, V. Shustov2, D. Bizyaev2, P. Gaiduk3, G. Ivlev3 and
S. Prokopiev3
1
Far Eastern Branch of Russian Academy of Science, Russia
2
Kazan Physical-Technical Institute of Russian Academy of Science, Russia
3
Belorussian State University, Belarus[28-P18]
Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates
K. Nakazawa1, K. Toko1, N. Saitoh2, N. Yoshizawa2, N. Usami3, and T. Suemasu1
1
University of Tsukuba, Japan
2
National Institute of Advanced Industrial Science and Technology, Japan
3
Nagoya University, Japan[28-P19]Morphology of Gold Silicide Formation in Annealed Au/Si System
C.-L. Hsu1 and C.-T. Shih2
1
Chung Yuan Christian University, Taiwan
2Tunghai University, Taiwan[28-P20]
Syntheses of Nanowire Bundles based on Semiconducting Metal Silicides
W. Li, K. Nakane and H. Tatsuoka
Shizuoka University, Japan[28-P21]
Synthesis of Si nanowires using Au catalyst accompanied with Silicide nanoparticle formation
E. C. Meng, W. Li, Y. Shirahashi, K. Nakane and H. Tatsuoka
Shizuoka University, Japan[28-P22]
Reaction of Na-Sn compounds with Air and Sodium Carbonate and Stannate Nano-/Micro-rod Formation
K. Nakane, E. Meng, W. Li and H. Tatsuoka
Shizuoka University, Japan[28-P23]Size and Substrate Orientation Dependence of Structures and Morphologies of Ni clusters on SrTiO3
substrates studied by UHV-TEM/STM

M. Tanaka
1
National Institute for Materials Science, Japan[28-P24]
ESR study on pure single crystalline sapphire
M. Hori1, N. Fukumoto2, Y. Ono1, R. Chikaoka1, Y. Hayakawa1, S. Moriwaki2 and N. Mio2
1
University of Toyama, Japan
2
University of Tokyo, Japan[28-P25]
Effects of Phosphorus Addition to Polysilane Thin Films and the Application to Photovoltaic Devices
T. Oku1, J. Nakagawa1, A. Suzuki1, T. Akiyama1, M. Yamada2, S. Fukunishi2 and K. Kohno2
1
University of Shiga Prefecture, Japan
2
Osaka Gas Chemicals Co., Ltd., Japan[28-P26]
Fabrication and Photovoltaic Properties of Silicon Phthalocyanine and Silicon Naphthalocyanine-Based
Solar Cells
T. Oku1, K. Yoshida1, S. Hori1, A. Suzuki1, T. Akiyama1 and Y. Yamasaki2
1
University of Shiga Prefecture, Japan
2
Orient Chemical Industries Co. Ltd., Japan[28-P27]
Microstructure Analysis and Properties of Spherical Silicon Solar Cells with Anti-Reflection Thin Films
T. Oku1, M. Kanayama1, T. Akiyama1, Y. Kanamori2, M. Murozono2
1
University of Shiga Prefecture, Japan
2
Clean Venture 21 Co. Ltd., Japan