APAC	  SILICIDE	  2016	  PROGRAM	  (updated 2016/6/15)

16th	  July	  	  13:00—13:10 Opening address, Takashi Suemasu, Chairman APAC-SILICIDE 2016
Session I: Plenary
13:10—14:10 [16-PM-I-1] Plenary
Novel Growth-Techniques of Group-IV Based Semiconductors on Insulator for
Post-Scaling Devices
Masanobu Miyao and Taizoh Sadoh
Department of Electronics, Kyushu University, Japan
14:10—14:40 [16-PM-I-2] Invited
Two-Dimensional Silicon Nanosheets; Controllable Exfoliation and Exploration ofFunctionality
Hideyuki Nakano
Toyota Central R&D Labs., Inc., Japan
Break 14:40—15:00
Session II: Silicide Basics
15:00—15:30 [16-PM-II-1] Invited
Structure and Electronic Properties of Low Dimensional Semiconducting Barium andCalcium Silicides
Dmitri B. Migas, Andrew B. Filonov, Vladislav O. Bogorodz, Victor E. Borisenko
Belarusian State University of Informatics and Radioelectronics, Belarus
15:30—15:50 [16-PM-II-2]
Electronic and Optical Properties of BaSi2
Motoharu Imai, Mukesh Kumar and Naoto Umezawa
National Institute for Materials Science, Japan
15:50—16:10 [16-PM-II-3]
Synthesis of Crystalline Si-based Nanosheets by Extraction of Ca atoms from CaSi2 inInositol Hexakisphosphate (IP6) Solution
Xiang Meng1, Kenta Sasaki2, Koki Sano2, Peiling, Yuan1, Hirokazu Tatsuoka3
1
Graduate School of Science and Technology, Shizuoka University, Japan
2
Graduate School of Engineering, Shizuoka University, Japan
3
Graduate School of Integrated Science and Technology, Shizuoka University,Japan
16:10—16:30 [16-PM-II-4]
Low-Temperature Formation of Position-Controlled Large-Grain Ge on Insulator byGold-Induced Crystallization Combined with Localized Nucleation
Taizoh Sadoh, Rikuta Aoki, Takahiro Tanaka, and Masanobu Miyao
Kyushu University, Department of Electronics, Japan16:30—16:50 [16-PM-II-5]
Phase Composition Evolution of Iron Silicide Nanocrystallites in the Course of Embedding
into Silicon
Evgeniy A. Chusovitin1, Alexander V. Shevlyagin1, Dmitry L. Goroshko1,2, Sergey A.
Dotsenko1,2, Nikolay G. Galkin1,2 and Anton K. Gutakovskii3
1
Institute of Automation and Control Processes FEB RAS, Russia
2
Far Eastern Federal University, Russia
3
Novosibirsk State University, Russia.
17:00— 19:00

Banquet17th	  July	  Session III: Nano-Silicides & Silicide Spitronics
8:50— 9:20 [17-AM-III-1] Invited
Metal Silicide Nanowires for Detection and Manipulation of Magnetic Skyrmions
Matthew John Stolt and Song Jin
Department of Chemistry University of Wisconsin-Madison , USA
9:20— 9:40 [17-AM-III-2]
Spin Valve Junctions Comprising Fe-Si Materials
Tsuyoshi Yoshitake1, Kazutoshi Nakashima1, Kazuki Kudo1, Kazuya Ishibashi1, Yuki Asai1,Ken-ichiro Sakai2, and Hiroyuki Deguchi3
1
Department of Applied Science for Electronics and Materials, Kyushu University, Japan
2
Dept. of Control and Information Sys. Eng., Nat. Inst. of Techn., Kurume Coll., Japan
3
Dept. of Basic Sci., Kyushu Inst. of Techn., Japan
9:40— 10:00 [17-AM-III-3]
Formation of Fe3Si-Nanodots on Ultrathin SiO2 Induced by H2-plasma Treatment and Their
Magnetic-Field Dependent Electron Transport Properties
Hai Zhang, Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta and Seiichi Miyazaki
Graduate School of Engineering, Nagoya University, Japan
10:00—10:20 [17-AM-III-4]
Growth, Structure, Interfaces and Properties of Three-Layers Si(111)/[Fe-richSilicide]/[Si-rich Silicide]/[Fe-rich Silicide]
A. Gouralnik1, E. Pustovalov,2, Ko-Wei Lin3, A. Chuvilin4,5, S. Chusovitina1,2, S. Dotsenko1,N. Galkin 1,2, A. Cherednichenko6 and V. Plotnikov2
1
Institute of Automation and Control Properties FEB RAS, Russia
2Far-Eastern Federal University, Physics Dpt., Russia
3
Department of Materials Sci. and Eng., National Chung Hsing University, Taiwan
4CIC NanoGUNE Consolider, Tolosa Hiribidea , Spain
5Ikerbasque, Basque Foundation for Science, Alameda Urquijo, Spain
6
Institute of Chemistry FEB RAS, Russia
Break 10:20—10:40
Session IV: Silicide Green Technology; Thermoelectrics
10:40—11:10 [17-AM-IV-1] Invited
Recent Advances in Thermoelectric Silicides
Daryoosh Vashaee
Department of Electrical and Computer Engineering, Monteith Research Center, North	 
Carolina State University, USA11:10—11:30 [17-AM-IV-2]
The Enhancement of Power Factor of MnSiγ/AlMnSi Mutilayer
Akinori Nishide, Yosuke Kurosaki, Shin Yabuuchi and Jun Hayakawa
Hitachi Ltd., R&D group, Center for exploratory Research, Japan
11:30—11:50 [17-AM-IV-3]
Influence of Mg-Related Defects on Structural and Electronic Properties of Mg2Si
Naomi Hirayama, Iida Tsutomu, Keishi Nishio, Yasuo Kogo, Yoshifumi Takanashi, andNoriaki Hamada
Tokyo University of Science, Japan
11:50—12:10 [17-AM-IV-4]
Preparation of Mg2Si Thin Films on Various Kinds of Substrates and their ThermoelectricProperties
Mao Kurokawa1, Mutsuo Uehara1, Daichi Ichinose1,2, Takao Shimizu3,Kensuke Akiyama1,4 ,Masaaki Matsushima1 , Hiroshi Uchida5 , Yoshisato Kimura2, Hiroshi Funakubo 1,2,3
1
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Japan
2
School of Materials and Chemical Technology, Tokyo Institute of Technology, Japan
3
Materials Research Center for Element Strategy, Tokyo Institute of Technology, Japan
4Kanagawa Industrial Technology Center, Japan
5
Department of Materials and Life Science, Sophia University, Japan
Lunch Break 12:10—13:30Session V: Silicide Green Technology; Photovoltaics
13:30—14:00 [17-PM-V-1] InvitedGroup IV Clathrates Developed for Photovoltaics
Tetsuji Kume1, Fumitaka Ohashi1, Kentaro Sakai2, Atsuhiko Fukuyama3, Motoharu Imai4,Haruhiko Udono5, Takayuki Ban1, Hitoe Habuchi6, Hidetoshi Suzuki3, Tetsuo Ikari3, andShuichi Nonomura1
1
Faculty of Engineering, Gifu University, Japan
2
Center for Collaborative Research & Community Cooperation, University of Miyazaki,
Japan
3
Faculty of Engineering, University of Miyazaki, Japan
4
National Institute for Materials Science, Japan
5
Graduate school of Science and Engineering, Ibaraki University, Japan
6
Department of Electrical and Computer Engineering, National Institute of Technology,Gifu College, Japan
14:00—14:20 [17-PM-V-2]
Investigation of p-type Emitter Layer Materials for Heterojunction Barium Silicide Thin
Film Solar Cells
Kazuma Takahashi1, Yoshihiko Nakagawa1, Kosuke O. Hara2, Yasuyoshi Kurokawa1,
Noritaka Usami1
1Graduate School of Engineering, University of Nagoya, Japan
2
Center for Crystal Science and Technology, University of Yamanashi, Japan
14:20—14:40 [17-PM-V-3]
Fabrication of B-doped p-BaSi2 on n-Ge(111) Substrates for Heterojunction Solar Cells
Ryota Takabe, Suguru Yachi, Daichi Tsukahara, Kaoru Toko and Takashi Suemasu
Institute of Applied Physics, University of Tsukuba, Japan

14:40—15:00 [17-PM-V-4]
The Growth of Polycrystalline Orthorhombic BaSi2 on Ge Substrate by Vacuum
Evaporation Method
Cham Thi Trinh1, Yoshihiko Nakagawa1, Kosuke O. Hara2, Ryota Takabe3, Takashi
Suemasu3, and Noritaka Usami1
1Graduate school of Engineering, Nagoya University, Japan
2
Center for Crystal Science and Technology, University of Yamanashi, Japan
3
Institute of Applied Physics, University of Tsukuba, Japan
15:00—15:20 [17-PM-V-5]
Proposal of a Method to Realize BaSi2 Thin Films with Uniform Orientation using
Reactivity of Excessive Ba in the Film and Si Substrate in Vacuum Evaporation
Yoshihiko Nakagawa1, Cham Thi Trinh1, Kosuke O. Hara2, Yasuyoshi Kurokawa1, Takashi
Suemasu3 and Noritaka Usami1
1Graduate School of Engineering, Nagoya University, Japan
2
Center for Crystal Science and Technology, University of Yamanashi, Japan
3
Institute of Applied Physics, University of Tsukuba, Japan
15:20—15:40 [17-PM-V-6]
Post -Annealing Effects on BaSi2 Evaporated Films Grown on Si Substrates
Takamichi Suhara1, Koichi Murata2, Aryan Navabi2, Kosuke O. Hara3, Yoshihiko
Nakagawa1, Trinh Cham Chi1, Yasuyoshi Kurokawa1, Takashi Suemasu4, Kang L. Wang2,and Noritaka Usami1
1Graduate School of Engineering, Nagoya University, Japan2
Department of Electrical Engineering, University of California, Los Angeles, USA
3
Center for Crystal Science and Technology, University of Yamanashi, Japan
4
Institute of Applied Physics, University of Tsukuba, Japan
Break 15:40—16:00
16:00—17:30 Poster Session I
17:30—19:00 Poster Session II

18th	  July	  Session VI: Thin film growth, Electric and Optical Properties, Silicide Devices
8:50— 9:20 [18-AM-VI-1] Invited
The Prospects for Silicon-Silicide Integrated Photonics
N.G. Galkin1,2, A.V. Shevlyagin1, D.L. Goroshko1,2, E.A. Chusovitin1, K.N. Galkin1
1
Institute of Automation and Control Processes, FEB RAS, Russia
2
Far Eastern Federal University, School of Natural Sciences, Russia
9:20—9:40 [18-AM-VI-2]
Room-Temperature Luminescent Properties of the Si/β-FeSi2 Nanocrystals/Si LED
A.V. Shevlyagin1, T.S. Shamirzaev2,3,4, A.K. Gutakovskii2,3, K.N. Galkin1, E.A. Chusovitin1,D.L. Goroshko1,5 and N.G. Galkin1,5
1Institute of Automation and Control Processes FEB RAS, Russia
2
Rzhanov Institute of Semiconductor Physics, SB RAS, Russia
3
Novosibirsk State University, Russia
4Ural Federal University, Russia
5
Far Eastern Federal University, Russia

9:40—10:00 [18-AM-VI-3]
Analysis of Oxidation Behavior in Nanocrystal β-FeSi2/Si Composites by Rutherford
Backscattering Spectrometry and Computation of Diffusion Flux
Mikihiro Arima1, Masaya Fuchi1, Kazumasa Narumi2, and Yoshihito Maeda1,2
1
Department of Computer Science and Electronics, Kyushu Institute of Technology, Japan
2
National Institutes for Quantum and Radiological Science and Technology(QST), Japan
10:00— 10:20 [18-AM-VI-4]
Relaxation of Thermal Quenching of Photoluminescence from Nanocrystal β-FeSi2/SiO2
composites
Yoshihito Maeda
Department of Computer Science and Electronics, Kyushu Institute of Technology, Japan
Break 10:20—10:40
10:40—11:00 [18-AM-VI-5]
Optical Constants of Sputtered FeSi2 Thin Films – Applications to Solar and Thermal
Radiation Control
Motofumi Suzuki, Shoma Masunaka, Kensuke Nishiura and Kyoko Namura
Department of Micro Engineering, Kyoto University, Japan
11:00—11:20 [18-AM-VI-6]
Structural and electrical properties of β-FeSi2 polycrystalline films with low electron
density
Kazuya Ogi1, Takahiko Higashi2, Shuya Ikeda1,Tetsu Hattori2 and Yoshikazu Terai11Department of Computer Science and Electronics, Kyushu Institute of Technology, Japan2
Graduate School of Science and Engineering, Kagoshima University, Japan
11:20— 11:40 [18-AM-VI-7]
Temperature-Dependent Magnetoresistance Effects in Fe3Si/FeSi2/Fe3Si Trilayered Spin
Valve Junctions
Kazuki Kudo1, Kazuya Ishibashi1, Kazutoshi Nakashima1, Yuki Asai1, Ken-ichiro Sakai2,Hiroyuki Deguchi3, and Tsuyoshi Yoshitake1
1
Department of Applied Science for Electronics and Materials, Kyushu University, Japan2
Department of Control and Information Systems Engineering, National Institute ofTechnology, Kurume College, Japan3
Department of Basic Sciences, Kyushu Institute of Technology, Japan
11:40—12:00 [18-AM-VI-8]
Impact of Mg2Si Thin Film on Absorption and Efficiency of a-Si:H Based Solar Cells
I. M. Chernev1, A. V. Shevlyagin1, K. N. Galkin1, J. Stuchlik2, Z. Remes2, T.H. Stuchlikova2,R. Fajgar3 and N. G. Galkin1,41Institute of Automation and Control Processes of FEB RAS, Russia
2
Institute of Physics of the ASCR, Czech Republic3
Institute of Chemical Process Fundamentals of the ASCR, Czech Republic
4
School of Natural Sciences, Far Eastern Federal University, Russia
12:15—12:30 Closing and Ceremony