APAC	  SILICIDE	  2016	  Poster	  Session	  (updated 2016/6/15)

Poster Session I[17-P1]
Low Cost Fabrication of Mg2Si Thermoelectric Device with Reused-silicon
Shigeyuki Nakamura1, Akinori Sigemune1, Shinya Shiga2, Yoshihisa Mori3 and Ken'ichi Takarabe3
1
National Institute of Technology, Tsuyama College, Japan
2
National Institute of Technology, Niihama College, Japan
3Okayama University of Science, Japan[17-P2]The Formation and Properties of BaSi2 Thin Films Obtained by Solid Phase Epitaxy on Si (111)
D.V. Fomin1, V.L. Dubov1, K.N. Galkin2, N.G. Galkin2, R.I. Batalov3 and V.A. Shustov3
1
Amur State University, Russia
2
Institute of Automation and Control Processes, FEB RAS, Russia
3Kazan Physical-Technical Institute, RAS, Russia[17-P3]
An Influence of Stresses in CaSi2 hR6 Lattice with R-3m Space Group on the Band Structure andProperties of h-CaSi2/Si and Si/h-CaSi2/Si Heterostructures
N.G. Galkin1, S.A. Dotsenko1, K. N. Galkin1, L. Dózsa2, I. Cora 2, B. Pécz2
1
Institute of Automation and Control Processes, FEB RAS, Russia
2
Institute of Technical Physics and Materials Research, HAS, Hungary[17-P4]
Thermoelectric Properties of Quaternary Si Clathrate K8GaxZnySi46-x-y
Shiva Kumar Singh and Motoharu ImaiNational Institute for Materials Science, Japan.
[17-P5]
Energetic Consideration of Compounds Formed at Mg2Si/Ni Electrode Boundary Layer
Yoji Imai1, Hiroharu Sugawara2, Yoshihisa Mori3, Shigeyuki Nakamura4, Atsushi Yamamoto1, andKen-ichi Takarabe3
1
National Institute of Advanced Industrial Science and Technology, Japan
2
Tokyo Metropolitan University, Japan
3
Okayama University of Science, Japan
4
National Institute of Technology, Tsuyama College, Japan[17-P6]
Formation and Analysis of GeSn on Insulator with Non-Thermal Equilibrium Sn Concentration Obtainedby Pulsed Laser-Annealing
Kenta Moto1, Ryo Matsumura1,2, Taizoh Sadoh1, Hiroshi Ikenoue3, and Masanobu Miyao1
1
Department of Electronics, Kyushu University
2
JSPS Research Fellow, Japan3
Department of Gigaphoton Next GLP, Kyushu University, Japan[17-P7]
Enhancement of Hole Concentration in B-doped BaSi2 Epitaxial Thin Films by Pulse Laser Annealing
M. Emha Bayu, H. Urai, D. Tsukahara, K. Toko, T. Makimura, T. Suemasu
Institute of Applied Physics, University of Tsukuba, Japan

[17-P8]
p-BaSi2/n-Si Solar Cells with Conversion Efficiency Approaching 10% by Reduction of Contact
Resistance and Surface Passivation using a-Si Capping Layers
Suguru Yachi, Ryota Takabe, Kaoru Toko and Takashi Suemasu
Institute of Applied Physics, University of Tsukuba, Japan[17-P9]Synthesis of Si-based Nanostructures by Extraction of Ba Atoms from BaSi2 in Acid Solutions
P. Yuan1, S. Ksasaki2, Y. Kumazawa2, H. Tatsuoka2
1
Graduate School of Science and Technology, Shizuoka University, Japan
2
Graduate School of Integrated Science and Technology, Shizuoka University, Japan[17-P10]Multi-layer Graphene on Insulator Formed by Co-induced Layer Exchange
H. Murata, K. Toko and T. Suemasu
Institute of Applied Physics, University of Tsukuba, Japan[17-P11]
Effect of Interlayer on Ag-induced Layer Exchange Crystallization of Amorphous Ge Thin Film onInsulator
R. Yoshimine, K. Toko, and T. Suemasu
Institute of Applied Physics, University of Tsukuba, Japan[17-P12]
Observation of pn-junction Depth in Mg2Si Diodes Fabricated by Short Period Thermal Annealing
Yuma Onizawa1, Tomohiro Akiyama1, Nobuhiko Hori1, Fumitaka Esaka2, Haruhiko Udono1
1
Ibaraki University, Japan2
Japan Atomic Energy Agency (JAEA), Japan[17-P13]On the Rod-like Precipitations Formed in the Vapor Deposited Fe-Si Film
Shin-ichiro Kondo, Takao Morimura and Hiromichi Nakashima
Department of Materials Science and Engineering, Nagasaki University, Japan[17-P14]
The Crystal Structure and Electrical Resistivity of a Novel Na-Pt-Ge Intermetallic Compound, Na2Pt3Ge
Kohei Aiba1, Takahiro Yamada1,2, and Hisanori Yamane1
1Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan
2JST, PRESTO, Japan[17-P15]
Preferred Orientation of BaSi2 Thin Films Fabricated by Thermal EvaporationKosuke O. Hara1, Cham Thi Trinh2, Yoshihiko Nakgawa2, Yasuyoshi Kurokawa2, Keisuke Arimoto1, JunjiYamanaka1, Kiyokazu Nakagawa1, and Noritaka Usami2
1
Center for Crystal Science and Technology, University of Yamanashi, Japan
2
Graduate School of Engineering, Nagoya University, Japan[17-P16]
Synthesis of Flower-like Si Nanostructures on Si Substrates
H. Suzuki1, P. Yuan2, X. Meng2, Y. Saito1, K. Sasaki1, R. Tamaki3, H. Tatsuoka1, N. Ahsan3 and Y. Okada3
1
Graduate School of Integrated Science and Technology, Shizuoka University, Japan
2
Graduate School of Science and Technology, Shizuoka University, Japan
3
Research Center for Advanced Science and Technology, Tokyo University, Japan

[17-P17]
Optical and Photocatalytic Properties of Nanocomposites Composed of CaxSi2 Nano-flakes and Nickel
Silicide Particles
Hiroshi Itahara1, Xiaoyong Wu2, Yoshiki Yamazaki2, Haruo Imagawa1, Shu Yin2, Kazunobu Kojima2,
Shigefusa F. Chichibu2 and Tsugio Sato2
1Toyota Central Research & Development Labs., Inc., Japan
2
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan[17-P18]
Mg2Si/Si Composite Particles Synthesized by a Metathesis Reaction and Their Anode Performance as
Li-ion Batteries
Hiroshi Itahara1, Song-Yul Oh1, Takahiro Yamada2 and Hisanori Yamane2
1
Toyota Central Research & Development Labs., Inc., Japan
2
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan[17-P19]
Syntheses of Si-based Nanostructures Using Silicides as Starting Materials in Acid Solutions
Yuki Kumazawa1, Kenta Sasaki1, Xiang Meng2, Yuan Peiling2 and Hirokazu Tatsuoka2
1
Graduate School of Integrated Science and Technology, Shizuoka University, Japan
2
Graduate School of Science and Technology, Shizuoka University, Japan[17-P20]
Investigation on Minority-carrier Lifetime and Solar Cell Properties of BaSi2 Formed on Multicrystalline
Si Substrates
Y. Li1, Cham Thi Trinh2, R. Takabe1, K.Toko1, N.Usami2, T.Suemasu1
1
Institute of Applied Physic, University of Tsukuba, Japan2
Graduate school of Engineering, Nagoya University, Japan[17-P21]
Ion Channeling Measurements of β-FeSi2 Films Epitaxially Grown on Si(111) and Their Analysis byMultiple Scattering Theory
Masaya Fuchi1, Mikihiro Arima1, Kazumasa Narumi2, Yoshikazu Terai1 and Yoshihito Maeda1,2
1
Department of Computer Science and Electronics, Kyushu Institute of Technology, Japan2National Institutes for Quantum and Radiological Science and Technology (QST), Japan[17-P22]
Realization of Crystalline BaSi2 Thin Films by Vacuum Evaporation on (111)-oriented Si Layers
Fabricated by Aluminum Induced Crystallization
Jefferson A. Wibowo1, Isao Takahashi1, Kosuke O. Hara2 and Noritaka Usami1
1
Nagoya University, Japan
2
University of Yamanashi, Japan[17-P23]
Structural Characterizations of Si-based Nanostructures by Extraction of Metallic Atoms from CaSi2,SrSi2 and BaSi2 by Inositol Hexakisphosphate
Kenta Sasaki1, Koki Sano1, Xiang Meng2, Peiling Yuen2, Yuki Kumazama1, Hirokazu Tatsuoka1
1Graduate School of Integrated Science and Technology, University of Shizuoka, Japan
2
Graduate School of Science and Technology, University of Shizuoka, Japan

Poster Session II[17-P24]
Preparation of Wire Arrays on Si Substrates by Repeated Chemical Treatment in AgNO3/HF AqueousAolution
Makoto Nakayama, Takonori Suzuki and Hirokazu Tatsuoka
Graduate School of Integrated Science and Technology, Shizuoka Univ., Japan[17-P25]
Synthesis of Mn-based Nanostructures on Mn Substrates
Shinya Kusazaki1, Hiroaki Suzuki1, Xiang Meng2, Yuya Saito1, Hirokazu Tatsuoka2
1
Graduate School of Integrated Science and Technology, Shizuoka University, Japan
2
Graduate School of Science and Technology, Shizuoka University, Japan[17-P26]
Solid-phase Synthesis of Mg2Si Thin Film on Sapphire Substrate
Motomu Saijo, Kazuhiro Kunitake, Ryota Sasajima, Yuta Takagi, Naoyuki Sato, and Takashi Ikehata
Graduate School of Science and Engineering, Ibaraki University, Japan[17-P27]
Synthesis of Si-based nanowires on insulating substrates
Yuya Saito1, Hiroaki Suzuki1, Xiang Meng2, Shinya Kusazaki1, Hirokazu Tatsuoka1
1Graduate School of Integrated Science and Technology, Shizuoka University, Japan2Graduate School of Science and Technology, Shizuoka University, Japan[17-P28]
Fabrication of Mg2Si pn-junction Photodiode with Shallow Mesa-structure and Ring ElectrodeT. Akiyama1, N. Hori1, S. Tanigawa2, D. Tsuya2, H. Udono1
1
Ibaraki University, Japan2
National Institute for Materials Science, Japan[17-P29]
Low Temperature (< 150 °C) Formation of Amorphous Ge on Insulating Substrate by Stress Stimulated
Crystallization
Kinta Kusano1, Kazuki Kudo1, Taisei Sakaguchi1, Takatsugu Sakai1, Shinichi Motoyama2, Yutaka
Kusuda2, Masahiro Furuta2, Nobuyuki Naka3, Tomoko Numata3, Kenichiro Takakura1, and Isao Tsunoda1
1
National Institute of Technology, Kumamoto College, Japan
2
SAMCO Inc., Japan
3HORIBA Ltd., Japan[17-P30]
Dependence of Direct Transition Energies on Growth Temperature in β-FeSi2 Epitaxial Films
Motoki Iinuma1, Hiroaki Tsukamoto2, Naoki Murakoso1, Haruki Yamaguchi2 and Yoshikazu Terai11Department of Computer Science and Electronics, Kyushu Institute of Technology, Japan
2
Graduate School of Science and Engineering, Kagoshima University, Japan[17-P31]
Growth of p-type β-FeSi2 Polycrystalline Films by RF Magnetron Sputtering
Shuya Ikeda1, Kazuya Ogi1, Tetsu Hattori2, Takahiko Higashi2 and Yoshikazu Terai11Department of Computer Science and Electronics, Kyushu Institute of Technology, Japan
2
Graduate School of Science and Engineering, Kagoshima University, Japan

[17-P32]
Lattice Vibrational Properties of BaSi2 Epitaxial Film in Polarized Raman Spectra
Naoki Murakoso1, Haruki Yamaguchi2, Motoki Iinuma1, Takashi Suemasu3, and Yoshikazu Terai11Department of Computer Science and Electronics, Kyushu Institute of Technology, Japan
2
Graduate School of Science and Engineering, Kagoshima University, Japan
3
Institute of Applied Physics, University of Tsukuba, Japan[17-P33]
Size and Shape Control of Epitaxial β-FeSi2 Nanodots in Si-based Nanoarchitecture Toward Advanced
Thermoelectric Materials
S. Sakane1, K. Watanabe1, T. Taniguchi1, M. Isogawa1, S. Yamasaka1, S. Tsurusaki1, S. Takeuchi1, A.
Sakai1 and Y. Nakamura 1,2
1
Graduate School of Engineering Science, Osaka University, Japan
2
CREST-JST, Japan[17-P34]
The Growth of High Quality Epitaxial β-FeSi2 Thin Films by Solid Phase Epitaxy
Tatsuhiko Taniguchi1, Shunya Sakane1, Shunsuke Aoki1, Kentaro Watanabe1,2,Takeyuki Suzuki3, Takeshi
Fujita2,4, and Yoshiaki Nakamura1,2
1
Graduate School of Engineering Science, Osaka University, Japan
2CREST, JST, Japan
3
The Institute of Scientific and Industrial Research, Osaka University, Japan
4Tohoku University, Japan[17-P35]
Solid Phase Epitaxy for Formation of Silicon-GaSb Based Heterostructures
Dmitry Goroshko1,2, Alexander Shevlaygin1, Evgeniy Chusovitin1, Konstantin Galkin1, Igor Chernev1 andNikolay Galkin1,2
1
Institute of Automation and Control Processes FEB RAS, Russia
2
Far Eastern Federal University, Russia[17-P36]
Fe/boron-doped Ultrananocrystalline Diamond/Fe Trilayered Spin Valve Junctions
Kazuki Kudo1, Satoshi Takeichi1, Hirokazu Kishimoto1, Ken-ichiro Sakai2, Hiroyuki Deguchi3, andTsuyoshi Yoshitake1
1
Department of Applied Science for Electronics and Materials, Kyushu University, Japan2
Department of Control and Information Systems Engineering, National Institute of Technology, Kurume
College, Japan3
Department of Basic Sciences, Kyushu Institute of Technology, Japan[17-P37]
Structural Analysis of ErSi2 Nanowire Grown on Si(100)Kazuki Takahashi, Hiroyuki Kagitani, Shun Osaka, Hiroshi Tabata, Osamu Kubo, Mitsuhiro Katayama
Graduate School of Engineering, Osaka University, Japan[17-P38]
Oxidation Resistance of Impurity Doped Mg2Si Grown from the Melt
Shu Konno, Tsubasa Otubo, Kohei Nakano, Haruhiko Udono
Ibaraki University, Japan[17-P39]
Evaluation of a Bandgap of Cubic Mg2Si by First Principle Calculation with PMT-QSGW Method
Ayumi Inaba and Hiroharu Sugawara
Department of System Design, Tokyo Metropolitan University, Japan

[17-P40]
Frequency-Dependent Capacitance-Voltage and Conductance-Voltage Characteristics of n-Type
Nanocrystalline FeSi2/Intrinsic Si/p-Type Si Heterojunctions
Peeradon Onsee, Asanlaya Duangrawa, Sakmongkon Teakchaicum, Phongsaphak Sittimart, AdisonNopparuchikun and Nathaporn Promros
Department of Physics, King Mongkut’s Institute of Technology, Thailand[17-P41]
Surface Structure of Epitaxial BaSi2(100) Film Formed on Si (111)
Hiroyuki Kagitani, Osamu Kubo, Shouta Okasaka, Kazuki Takahashi, Hiroshi Tabata, and Mitsuhiro
Katayama
Graduate School of Engineering, Osaka University, Japan[17-P42]
Effects of Source Materials on Fabrication of β-FeSi2 Thin Films by RDE Method
Haruya Kobayashi, Keisuke Sato and Yoshiaki Hara
National Institute of Technology, Ibaraki College, Japan[17-P43]
Effects of Nitrogen Doping on Optical and Electrical Properties of FeSi2 Films Prepared by Sputtering
Tomohiro Nogami1, Ryuji Baba1, Hirokazu Kishimoto1, Tarek M. Mostafa1, Nathaporn Promros2, andTsuyoshi Yoshitake1
1
Department of Applied Science for Electronics and Materials, Kyushu University, Japan2
Department of Physics, King Mongkut’s Institute of Technology, Thailand[17-P44]
EXAFS Study on Nitrogen-doped Nanocrystalline FeSi2 Films Prepared by Sputtering
Aki Tominaga1,2, Ruji Baba1 Hirokazu Kishimoto1, Tarek Mostafa1, Hiroshi Naragino1, KazutakaKamitani2, Toshihiro Okajima3, and Tsuyoshi Yoshitake1
1
Department of Applied Science for Electronics and Materials, Kyushu University, Japan
2Res.Center for Synchrotron Light Appl., Kyushu University, Japan
3
Kyushu Synchrotron Light Research Center, Japan[17-P45]
Solvent-Controlled Anatase Titania Thin Film via Hydrothermal Method and Its Orientation Mechanism
Meilan Guo1,2, Tianguo Deng1, Jun Tao1, Yun Gao1 and Guosheng Shao2,3
1
Faculty of Materials Science and Engineering, Hubei University, China
2
Institute for renewable energy and environmental technologies, University of Bolton, UK
3
UK-China Centre for Multifunctional Nanomaterials, Zhengzhou University, China[17-P46]
Ab-initio Calculations of Nanocrystallites Embedding in Silicon: Optical Properties
Semyon A. Balagan1, Vladimir U. Nazarov2 and Nikolay G. Galkin1
1
Institute for Automation and Control Processes, FEB RAS, Russia
2
Research Center for Applied Sciences, Academia Sinica, Taiwan[17-P47]
Forming of Magnesium and Calcium Silicide Nanoparticles on the Surface of Hydrogenated Silicon Thin
Films for the Whole in Situ Deposition Process of Diodes
The Ha Stuchlikova, Zdenek Remes, Jiri Stuchlik,
Institute of Physics ASCR, Czech Republic