APAC‐SILICIDE 2010 Poster session
Poster Session I[24-P1]
Sr2SiO4 Flower-like Nanostructures Grown by Thermal Oxidation of SrSi2 with Ga Droplets
Q. Yang, T. Yasuda, K. Ogino, 1M. Tanaka, and H. Tatsuoka
Shizuoka University, 1NIMS, Japan[24-P2]Formation of ultrahigh density iron-besed nanodots on Si (111) substrates using ultrathin SiO2 films
H. Hamanaka, Y. Nakamura, K. Tanaka, J. Kikkawa, and A. Sakai
Osaka University, Japan[24-P3]
Influence of CrSi2 nanocrystals on the electrical properties of Au/p-Si/CrSi2 NCs/n-Si diodes
N. G. Galkin, 1L. Dózsa, E. A. Chusovitin, S. A. Dotsenko, 1B. Pécz, and 1L. Dobos
Far Eastern Branch of Russian Academy of Science, Russia
1
Research Inst. for Technical Physics and Materials Science, Hungary[24-P4]Ultra high vacuum growth of CrSi2 and β-FeSi2 nanoislands and Si top layers on the plasma modified
monocrystalline silicon surfaces
N. G. Galkin, 1V. M. Astashynski, E. A. Chusovitin, K. N. Galkin, T. A. Dergacheva, 1A. M. Kuzmitski, 1E. A.
Kostyukevich
Far Eastern Branch of Russian Academy of Science, Russia
1
B.I.Stepanov Inst. Physics, Belarus[24-P5]Adhesion of Ag Atoms to In Surface Magic Clusters on Si(111)-7×7 Studied by UHV-TEM/STM
M. Tanaka and M. Shimojo
National Institute for Materials Science, Japan[24-P6]
Influence of Si(111)
3 × 3 -R30˚-Sb Surface Phase on the Formation and Conductance ofLow-Dimensional Magnesium Silicide Layer on Si(111) Substrate
K. N. Galkin, D. L. Goroshko, and N. G. Galkin
Far Eastern Branch of Russian Academy of Science, Russia[24-P7]
Formation of nanocrystalline CrSi2 layers in Si by ion implantation and pulsed annealing
R. I. Batalov, R. M. Bayazitov, V. F. Valeev, 1N. G. Galkin, 1D. L. Goroshko, 1K. N. Galkin, 1S. V. Vavanova,
1
A. M. Maslov, 1E. A. Chusovitin, 2P. I. Gaiduk, 3G. D. Ivlev, and 3E. I. Gatzkevich
Kazan Physical-Technical Institute of Russian Academy of Science, Russia
1
Far Eastern Branch of Russian Academy of Science, Russia
2Belarussian State University, Belarus, 3 Institute of Physics of NAS, Belarus[24-P8]Temperature dependence of direct transition energies in β-FeSi2 epitaxial films on Si(111) substrate
K. Noda, Y. Terai, K. Yoneda, and Y. Fujiwara
Osaka University, Japan

APAC‐SILICIDE 2010 Poster session[24-P9]Photoluminescence and Photoreflectance Studies in Si/β-FeSi2/Si(001) Double Heterostructure
K. Yoneda, Y. Terai, K. Noda, N. Miura, and Y. Fujiwara
Osaka University, Japan[24-P10]
Valence Electronic Structure of β-FeSi2 Single Crystal Investigated by Photoelectron Spectroscopy Using
Synchrotron Radiation
K. Ogawa, 1M. Sasaki, 1A. Ohnishi, 1M. Kitaura, 2H. Fujimoto, J. Azuma, K. Takahashi, and M. Kamada
Saga University, 1Yamagata University, 2Kumamoto University, Japan[24-P11]
Ab initio calculation of (101) and (100) surface for β-FeSi2
S. Tanimoto and T. Nagano
Ibaraki University, Japan[24-P12]
Surface characterization of homoepitaxial β-FeSi2 film on β-FeSi2 (111) substrate by X-ray photoelectron andX-ray absorption spectroscopy
F. Esaka, H. Yamamoto, 1H. Udono, 2N. Matsubayashi, K. Yamaguchi, S. Shamoto, M. Magara, and T.
KimuraJapan Atomic Energy Agency, 1Ibaraki University, 2AIST, Japan[24-P13]
Preparation and Physical Properties of Single Layer Iron-Silicide Films
N. Yasui, K. Kametomo, K. Takarabe, 1H. Fujioka, 1J. Hayashi, 1R. Yarita, and 1S. Nakamura
Okayama University of Science, 1Tsuyama National College of Technology, Japan[24-P14]
Surface analysis of single-crystalline β-FeSi2
Y. Yamada, 1M. Wei, 2H. Asaoka, 2H. Yamamoto, 2F. Esaka, 1H. Udono, and 2T. Tsuru
University of Tsukuba, 1Ibaraki University, 2Japan Atomic Energy Agency, Japan[24-P15]
Surface Structures on β-FeSi2 Substructure Formed by Heat-treatment in Ultra-high Vacuum and Their
Influence for Homoepitaxial Growth
S. Matsumura, K. Ochiai, H. Udono, 1F. Esaka, 1K. Yamaguchi, 1H. Yamamoto, and 1K. Houjo
Ibaraki University, 1 Japan Atomic Energy Agency, Japan[24-P16]
Reduction of carrier concentrations of β-FeSi2 films by atomic hydrogen-assisted molecular beam epitaxy
K. Akutsu, M. Suzuno, H. Kawakami, and T. Suemasu
University of Tsukuba, Japan[24-P17]
Determination of Silicon Vacancy in Ion-Beam Synthesized β-FeSi2
1T. Ichikawa, 1T. Ikeda, 1T. Jonishi, 2K. Narumi, and 1,3Y. Maeda
1Kyoto University, 2TIARA JAEA, 3ASRC JAEA, Japan[24-P18]
Molecular beam epitaxy of β-FeSi2 films on Si(111) substrates and its influence on minority-carrier diffusion
length of Si measured by EBIC
H. Kawakami, M. Suzuno, K. Akutsu, 1J. Chen, 1Y. Fuxing, 1T. Sekiguchi, and T. Suemasu
University of Tsukuba, Japan, 1NIMS, Japan

APAC‐SILICIDE 2010 Poster session[24-P19]
Antireflection coatings with FeSi2 layer-II: Application to spectrally-selective infrared emitterY. Kaneko, M. Suzuki, K. Nakajima, K. Kimura, 1K. Akiyama, Y. Harutsugu, H. Wakabayashi, and T. Makino
Kyoto University, 1Kanagawa Ind. Tech. Center, Japan[24-P20]On the Role of Induced Impurity Potential of β-FeSi2
S. Kondo, M. Hasaka, and T. Morimura
Nagasaki University[24-P21]Fabrication and characterization of novel Fe(Os)Si2 semiconductor
Y. Gao, H. W. Liu, Y. Lin, and 1G. Shao
Hubei University, P. R. China, 1University of Bolton, UK[24-P22]
Iron Silicide Photonic Crystals and Properties of Light Propagation
Y. Maeda, S. Kunimatsu, and A. Imai
Kyoto University, Japan[24-P23]
Transformation from ε-FeSi to β-FeSi2 in RF-Sputtered FeSix Films
N. Kawabata and K. Nakamura
Kansai University, Japan[24-P24]
Effect of temperature modulation during temperature gradient solution growth of β-FeSi2
Y. Ujiie, K. Nakamori, S. Mashiko, H. Udono, and 1T. Nagata
Ibaraki University, 1AIST, Japan[24-P25]
Effect of Cu, Co Addition on β-FeSi2 Growth by Molten Salt Method
M. Yamashita, C. Wen, T. Nonomura, T. Atsumi, Y. Hayakawa, and H. TatsuokaShizuoka University, Japan[24-P26]
Microstructure analysis of β-FeSi2 grown on AuCu-coated Si(001) substrate
H. Kijima, M. Itakura, M. Nishida, and 1K. Akiyama
Kyushu University, 1Kanagawa Ind. Technology Center, Japan[24-P27]
Thermal Process of Iron Silicides prepared by Magnetron sputtering
J. Zhang, Q. Xie, Y. Liang, W. Zeng, Q. Xiao, Q. Chen, D. Ma, Y. Wang, 1K. Yamada, and J. Luo
Guizhou University, P. R. China, 1Saitama University, Japan[24-P28]
The Atomic Diffusion in the interface of Fe/Si prepared by Magnetron sputtering
1,2J. Zhang, 1Q. Xie, 1Y. Liang, 1W. Zeng, 1Q. Xiao, 1Q. Chen, 2V. Borjanovič, 3M. Jakšič, 3M. Karlusic, 3B.
Gržeta, 4K. Yamada, and 4J. Luo
1Guizhou University, P. R. China, 2University of Zagreb, Croatia, 3Rudjer Boskovic Inst. Croatia, 4SaitamaUniversity, Japan

APAC‐SILICIDE 2010 Poster session[24-P29]
The effect of crystalline structure on photoluminescence of the β-FeSi2 film prepared by pulsed laser
deposition using two types of target
M. Zakir Hossain, H. Katsumata, and S. Uekusa
Meiji University, Japan[24-P30]
Phonon Properties of β-FeSi2 and Their Correlation with Photoluminescence Properties
T. Nakajima, B. Matsukura, T. Ikeda, Y. Hiraiwa, and Y. Maeda
Kyoto University, Japan

APAC‐SILICIDE 2010 Poster session
Poster Session II[25-P1]
Temperature-Dependent Interlayer Couplings in Fe3Si/FeSi2 Artificial Lattices
S. Hirakawa, K. Sakai, 1K. Takeda, and T. Yoshitake
Kyushu University, 1Fukuoka Inst. Technology, Japan[25-P2]Magnetoresistance characteristics of Fe3Si/CaF2/Fe3Si heterostructures grown on Si(111) by molecular beam
epitaxy
K. Harada, K. Sadakuni-Makabe, and T. Suemasu
University of Tsukuba, Japan[25-P3]Structural analyses of low-temperature-grown Fe3+xSi1-x epilayers on Ge(111)
T. Murakami, S. Yamada, K. Hamaya, K. Mibu, and M. Miyao
Kyushu University, Japan[25-P4]Magnetooptical Properties of Epitaxial Film of Iron Based Heusler Alloys
1,2
Y. Maeda, 1T. Ikeda, 1T. Icihkawa, 1T. Nakajima, 1B. Matsukura, 2T. Sadoh, and 2M. Miyao
1
Kyoto University, 2ASRC-Japan Atomic Energy Agency, 3Kyushu University, Japan[25-P5]
Effect of the atomic composition on interfacial structures in Co3-xFexSi/Si(111) grown by low-temperature
molecular beam epitaxy
S. Yamada, T. Murakami, K. Yamamoto, K. Hamaya, and M. Miyao
Kyushu University, Japan[25-P6]
Toward the epitaxial growth of ferromagnetic γ’-Fe4N on Si(001) substrates by molecular beam epitaxy
H. Lee, K. Ito, and T. Suemasu
University of Tsukuba, Japan[25-P7]
Influence of Sputtering Power on the Structural and Morphological Properties of Semiconducting Mg2Si ThinFilms
Q. Q. Xiao, Q. Xie, Z. Q. Yu, and K. J. Zhao
Guizhou University, P. R. China[25-P8]Impurity doping and thermoelectrical properties of metl grown Mg2Si and Mg2Sn bulk single crystals
Y. Takahashi, H. Koguchi, M. Midonoya, and H. Udono
Ibaraki University[25-P9]Thermoelectric Performances of Mg2SiSn doped with Bi
S. Tada, 1Y. Isoda, H. Fujiu, T. Nagai, and 1Y. Shinohara
Mitsuba Corporaton, 1National Institute for Materials Science, Japan

APAC‐SILICIDE 2010 Poster session[25-P10]The model of two-dimensional magnesium silicide phase with structure 2/3
K. N. Galkin, 1M. Kumar, 1,2S. M. Shivaprasad, and N. G. Galkin
Far Eastern Branch of Russian Academy of Science, Russia
1
National Physical Laboratory, India
2
Jawaharlal Nehru Center for Advance Scientific Research, India

3 -R30˚ on Si(111)[25-P11]
AES and EELS study of desorption of magnesium silicide films on Si(111)
K. N. Galkin, 1M. Kumar, 1,2S. M. Shivaprasad, and N. G. Galkin
Far Eastern Branch of Russian Academy of Science, Russia
1
National Physical Laboratory, India
2Jawaharlal Nehru Center for Advance Scientific Research, India[25-P12]
Silicon overgrowth atop low-dimensional Mg2Si on Si(111): structure, optical and thermoelectrical properties
K. N. Galkin and N. G. Galkin
Far Eastern Branch of Russian Academy of Science, Russia[25-P13]Growth, Optical and Electrical Properties of Ca2Si Film Grown on Si(111) and Mg2Si/Si(111) Substrates
S. A. Dotsenko, 1D. V. Fomin, K. N. Galkin, D. L. Goroshko, and N. G. Galkin
Far Eastern Branch of Russian Academy of Science, Russia
1
Amur State University, Russia[25-P14]
Study on the electronic structure and optical properties of the environmentally friendly semiconductor Ca3Si4
R. Gao and Q. Xie
Guizhou University, P. R. China[25-P15]
Electrical properties of Ca2Si sintered compact synthesized by Spark Plasma Sintering
C. Wen, T. Nonomura, Y. Warashina, 1A. Kato, Y. Kubota, T. Nakamura, Y. Hayakawa, and H. Tatsuoka
Shizuoka University, 1FDK Corporation, Japan[25-P16]
Thermoelectric Properties of Sputtered Iron-Silicide
S. Nakamura, Y. Marumoto, M. Mimura, D. Sugiyama, 1T. Kittaka, 1K. Kametome, 1N. Yasui, and 1K.
TakarabeTsuyama National College of Technology, 1Okayama University of Science, Japan[25-P17]Thermoelectric properties of group VI metal silicide semiconductors
T. Nonomura, C. Wen, M. Yamashita, K. Isobe, 1A. Kato, Y. Kubota, T. Nakamura, Y. Hayakawa, and H.
Tatsuoka
Shizuoka University, 1FDK Corporation, Japan[25-P18]
Synthesis and characterization of sodium monosilicide
K. Shirai, 1T. Yamada, 1H. Morito, 1H. Yamane, and H. Tatsuoka
Shizuoka Univeristy, 1Tohoku University, Japan

APAC‐SILICIDE 2010 Poster session[25-P19]
Preparation and Electrical Properties of MnSi1.7 Powder by Reaction of MnCl2 and Si Powder
J. Hu, W. Li, S. Guan, and 1H. Tatsuoka
Zhengzhou University, P. R. China, 1Shizuoka University, Japan[25-P20]
Chemical Trends of the Band Gaps in Semiconducting Silicon Clathrates
Y. Imai and A. Watanabe
AIST, Japan[25-P21]First-principles Calculations on the Electronic Structure and Optical Properties of Mg2Si Epitaxial on Si(111)
Q. Chen and Q. Xie
Guizhou University, P. R. China[25-P22]
Preparation of Schottky contacts on n-type Mg2Si single crystalline substrate
K. Sekino, M. Midonoya, H. Udono, and 1Y. Yamada
Ibaraki University, 1University of Tsukuba, Japan[25-P23]
Al- and Cu-doped BaSi2 films on Si (111) substrate by Molecular Beam Epitaxy and Evaluation of Depth
Profiles of Al and Cu atoms
M. Ajmal Khan, M. Takeishi, Y. Matsumoto, T. Saito, and T. Suemasu
University of Tsukuba, Japan[25-P24]
Growth of Al-doped p-type BaSi2 films by molecular beam epitaxy and the effect of high-temperatureannealing on their electrical properties
M. Takeishi, Y. Matsumoto, R. Sasaki, T. Saito, and T. Suemasu
University of Tsukuba[25-P25]
Formation of poly-Si layers on AZO/SiO2 substrates and anti-reflection coating with AZO films for BaSi2solar cells
A. Okada, R. Sasaki, Y. Matsumoto, M. Takeishi, T. Saito, K. Toh, 1N. Usami, and T. Suemasu
University of Tsukuba, Japan, 1Tohoku University, Japan[25-P26]
Fabrication of BaSi2 films on transparent CaF2(111) substrates by molecular beam epitaxy for opticalcharacterization
K. Toh, T. Saito, A. Okada, M. A. Khan, 1N. Usami, and T. Suemasu
University of Tsukuba, 1Tohoku University, Japan[25-P27]
Epitaxial Growth of BaSi2 Film by Magnetron Sputtering
Y. Ziyi, H. Zhengtong, and X. Quan
Guishou University, P. R. China[25-P28]
Characterization of n-Type Nanocrystalline FeSi2/p-Type Si Photodiodes Prepared by Facing-Targets
Direct-Current Sputtering at Room Temperature
N. Promros, K. Kawai, 1M. Shaban, and T. Yoshitake
Kyushu University, Japan, 1South Valley University, Egypt

APAC‐SILICIDE 2010 Poster session[25-P29]
n-Type β-FeSi2/p-Type Si Photodiodes Operating at Low Temperatures
S. Izumi, N. Promros, 1M. Shaban, and T. Yoshitake
Kyushu University, Japan, 1South Valley University, Egypt[25-P30]
Behavior of nickel silicide in multi-crystalline silicon for solar cells
T. Tachibana, T. Samejima, 1K. Arafune, 2Y. Ohshita, and A. Ogura
Meiji University, 1University of Hyoto, 2Toyota Tech. College, Japan[25-P31]
Demonstration of Near-Inrfared Light Detection in n-Type Nanocrystalline-FeSi2/intrinsic-Si/p-Type Si
Heterojunctions
N. Promros, 1M. Shaban, K. Kawai, and T. Yoshitake
Kyushu University, Japan, 1South Valley University, Egypt