APAC SILICIDE 2010 PROGRAM(update 2010/6/23)

July 24
13:00Æ 13:20 Opening address, Y. Maeda, Chairman, APAC-SILICIDE 2010

Session I: Nano Silicide: Synthesis, Characterization, and Applications
13:20—14:20 [24-PM-I-1] Plenary
Structure, Growth and Electrical Properties of Endotaxial Silicide Nanowires
P. A. Bennett, Arizona State Univ., USA
14:20—15:00 [24-PM-I-3] Invited
Synthesis, Properties and Applications of Transition Metal Silicide Nanowires
J. M. Higgins, R. Ding, P. Carmichael, J. P. DeGrave, and Song. Jin
University of Wisconsin-Madison, USA
Break 15:00—15:20
15:20—15:40 [24-PM-I-4]
Simple Synthesis of ZrO2/SiOx Core/Shell Nanofibers Using ZrSi2 with Gallium
Q. Yang, H. Kukino, 1M. Tanaka, A. Ishida, and H. Tatsuoka,Shizuoka University, 1NIMS, Japan
15:40—16:00 [24-PM-I-5]
Fe3Si Nanodots Epitaxially Grown on Si(111) Substrates Using Ultrathin SiO2 Film Technique
Y. Nakamura, 1S. Amari, and 1M. Ichikawa
Osaka University, 1University of Tokyo, Japan
16:10—17:40 Poster Session I

Session II: Silicide Basics
17:40—18:20 [24-PM-II-1] Invited
Preparation of High Purity Metals for Advanced DevicesProf. M. Isshiki, Tohoku University, Japan
18:20—18:40 [24-PM-II-2]
Magnetization of Bulk Mn11Si19 and Mn4Si7 Crystals
K. Hammura, 1H. Udono, 2I. J. Ohsugi, and 1T. Aono
Hitachi Cambridge Lab., Cavendish Lab, UK, 1Ibaraki University, 2Salesio Polytechnic, Japan
18:40—19:00 [24-PM-II-3]
Effect of Deposition Rate and a-Si Precursor on Optical and Magnetic Properties of Iron Films on Silicon
Substrates
1A. Gouralnik, 1,2N. Galkin, and 2V. Ivanov
1Lab. of Optics and Electrophysics of Nanostructures, Russia
2Far Eastern Branch of Russian Academy of Science, Russia
19:00—19:20 [24-PM-II-4]
Basic Properties of Ba1-xSrxSi2
M. Imai, National Institute for Materials Science, Japan

July 25Session III: Nano-area Characterization
8:30—9:10 [25-AM-III-1] Invited
Crystallographic Characteristics and Fine Structures of Semiconducting Silicides
G. Shao, Univ. Bolton, UK
9:10—9:50 [25-AM-III-2] Invited
Advances in Laser Atom Probe and Its Applications to Semiconductor and Insulator Materials
K. Hono and T. Ohkubo
National Institute for Materials Science, Japan
9:50—10:10 [25-AM-III-3]
Photoabsorption Nano-Spectroscopy for Characterizing of β-FeSi2 Nanoislands Grown on Si(111) and Si(001):
Dependence on Substrate Orientation
N. Naruse, 1Y. Nakamura, Y. Mera, M. Ichikawa, and K. Maeda
University of Tokyo, 1Osaka University, Japan
Break 10:10—10:30

Session IV: Silicide Spintronics
10:30—11:10 [25-AM-IV-1] Invited
Electrical Spin Injection and Detection in Si Using Ferromagnetic-Silicide Contacts
K. Hamaya and M. Miyao
Kyushu University, Japan
11:10—11:30 [25-AM-IV-2]
Ion Channeling Study of Epitaxy of Iron Based Heusler Alloy Films on Ge(111)1
T. Ikeda, 2K. Narumi, 2Y. Terai, 3K. Hamaya, 3T. Sadoh, 3M. Miyao, and 1,5Y. Maeda
1Kyoto University, 2TIARA JAEA, 3Osaka University, 4Kyushu University, 5ARSC JAEA, Japan
11:30—11:50 [25-AM-IV-3]
Fabrication of Fe3Si/CaF2 Heterostructures Ferromagnetic Resonant Tunneling Diode by Selected-Area
Molecular Beam Epitaxy
K. Sadakuni-Makabe, M. Suzuno, K. Harada, 1H. Akinaga, and T. Suemasu
University of Tsukuba, Japan , 1AIST, Tsukuba, Japan
11:50—12:10 [25-AM-IV-4]
Significance of the Interface Regarding Magnetic Properties of Mn-Nanosilicide in Silicon
Y. Ono, 1Y. Miyazaki, 1S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, and 1E. Ota
NTT Basic Research Lab., Japan, 1Keio University
Lunch Break 12:10—13:30

Session V: Silicide Devices and Optical Properties
13:30—14:10 [25-PM-V-1] Invited
New Semiconducting Silicides Assembled from Transition-Metal-Encapsulating Si Custers
T. Kanayama, N. Uchida, and T. Miyazaki
National Institute of Advanced Industrial Science and Technology, Japan
14:10—14:30 [25-PM-V-2]
Iron Silicide Studies Towards Photonics
Y. Maeda
Kyoto University, Japan14:30—14:50 [25-PM-V-3]
Growth, Structure and Luminescence Poperties of Multilayer Si/β-FeSi2 NCs/Si/…/Si Nanoheterostructures
N. G. Galkin, E. A. Chusovitin, 1T. S. Shamirsaev, 1A. K. Gutakovski, 1A. V. Latyshev
Far Eastern Branch of Russian Academy of Science, Russia
1Inst. Semiconductor Physics and Siberian Branch of Russian Academy of Science
Break 14:50—15:10
15:10—15:30 [25-PM-V-4]
Antireflection Coatings with FeSi2 Layer-I: Application to Low-Reflective Wire-Grid Polarizers
M. Suzuki, 1A. Takada, 1T. Yamada, 1T. Hayasaka, 1K. Sasaki, 1E. Takahashi, and 1S. Kumagai
Kyoto University, 1Sony Chemical & Information Device Corporation
15:30—15:50 [25-PM-V-5]
Band-gap Modifications of β-FeSi2 Epitaxial Films by Lattice Deformations
Y. Terai, K. Noda, K. Yoneda, 1H. Udono, 2Y. Maeda, and Y. Fujiwara
Osaka University, 1Ibaraki University, 2Kyoto University
16:00—17:30 Poster Sesson II
18:30—20:30

BanquetUshiku Chateau

http://www.ch-kamiya.jp/

July 26
Session VI: Silicide Green Technologies
8:30—9:10 [26-AM-VI-1] Invited
Metal Induced Crystallization of Amorphous Silicon for Photovoltaic Solar Cells
D. Van Gestel, I. Gordon, and J. Poortmans
IMEC, Belgium
9:10—9:30 [26-AM-VI-2]
Photovoltaic Properties of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions
T. Yoshitake, K. Nomoto, I. Shota, N. Promros, and 1M. Shaban
Kyushu University, Japan, 1South Valley University, Egypt
9:30—9:50 [26-AM-VI-3]
Photoresponse Properties of BaSi2 Epitaxial Films Grown on the Tunnel Jnction for High-Efficiency Thin-Film
Solar Cells
T. Saito, K. Toh, A. Okada, and T. Suemasu
University of Tsukuba, Japan
9:50—10:10 [26-AM-VI-4]
Computational Design of High Efficient FeSi2 Thin-Film Solar Cells
Y. Gao, H.W. Liu, and 1G. Shao
Hubei University, P. R. China, 1University of Bolton, UK
10:10—10:30 [26-AM-VI-5]
Metalorganic Chemical Vapor Deposition of β-FeSi2 on β-FeSi2 Seed Crystals formed on Si substrates
M. Suzuno, K. Akutsu, H. Kawakami, 1K. Akiyama, and T. Suemasu
University of Tsukuba, 1Kanagawa Ind. Tech. Center, Japan
Break 10:30-10:50
10:50—11:10 [26-AM-VI-6]
Thermoelectric Properties and Power Generation Characteristics Sintered n-type Mg2Si
T. Sakamoto, T. Iida, N. Fukushima, Y. Honda, M. Tada, 1Y. Taguchi, 2Y. Mito, H. Taguchi, and Y. Takanashi
Tokyo University of Science, 1Union Material Inc., 2Showa KDE Co., Ltd., Japan
11:10—11:30 [26-AM-VI-7]
Preparation and Thermoelectrical Properties of Higher Manganese Silicide Bulk Prepared From a Mn Compact
Using a Na-Si Melt
T. Yamada, Y. Miyazaki, and H. Yamane
Tohoku University, Japan
11:30—11:50 [26-AM-VI-8]
Growth of Homogeneous Mg2Si1-xGex Crystals for Thermoelectric Application
Y. Hayakawa, M. Arivanandhan, Y. Saito, T. Koyama, Y. Momose, H. Ikeda, A. Tanaka, Cuilian Wen, Y.
Kubota, T. Nakamura, Dinesh Kumar Aswal, 1S. Bhattachary, 2Y. Inatomi, and H. Tatsuoka
Shizuoka University, Japan, 1Bhabha Atomic Research Center, India, 2Japan Aerospace Exploration Agency,Japan
Closing 11:50Æ12:00