ICSS Silicide 2014 PROGRAMInternational Conference
July 19
13:00 13:10 Opening

Session I: Semiconducting β-FeSi2
13:10—13:50 [19-PM-I-1] Invited“Present state of research on photodiodes comprising iron disilicides and problems awaiting solution”
Tsuyoshi Yoshitake
Department of Appl. Sci. for Electr. and Mat., Kyushu University, Japan
13:50—14:30 [19-PM-I-2] Invited“Electrical transport properties of β-FeSi2 epitaxial and polycrystalline films with low residual carrier
density”
Yoshikazu Terai
Graduate School of Science and Engineering, Kagoshima University, Japan
14:30—14:50 [19-PM-I-3]“Photoluminescence properties of β-FeSi2 on treated Si surface by metals”
Kensuke Akiyama1 and Hiroshi Funakubo2
1
Kanagawa Industrial Technology Center and 2Tokyo Institute of Technology, Japan

Break 14:50—15:10

Session II: New formation technique for Si-based materials
15:10—15:50 [19-PM-I-4] Invited“Fabrication of Si nanoparticles from Si swarf and their application”
Hikaru Kobayashi, Masanori Maeda, Katsuya Kimura, Yuki Kobayashi, Kentaro Imamura,and Taketoshi Matsumoto
The Institute of Scientific and Industrial Research, Osaka University, Japan
15:50—16:10 [19-PM-I-5]“Synthesis of Mn silicide-based composite fine particles by solid-state exfoliation reaction andphotocurrent response under visible light irradiation”
Haruo Imagawa, Song-Yul Oh, and Hiroshi Itahara
Toyota Central Research & Development Labs., Inc., Japan
16:10—16:30 [19-PM-I-6]“Realization of single-phase BaSi2 films by vacuum evaporation with appropriate optical properties forsolar cell applications”
Kosuke O. Hara,1,2 Yoshihiko Nakagawa,1 Takashi Suemasu,2,3 and Noritaka Usami1,2
1
Graduate School of Engineering, Nagoya University, 2CREST-JST, 3University of Tsukuba, Japan

16:30—18:00 Poster Session I (Light meals & Drinks, 1.5h)

July 20
Session III: Semiconducting Mg2Si: thermoelectric and optical properties
8:30—9:10 [20-AM-II-1] Invited“Valence electron control on the incommensurate higher manganese silicides”
Yuzuru Miyazaki1, Yuta Kikuchi1, Kei Hayashi1, and Kunio Yubuta2
1
Department of Applied Physics, Tohoku University, Japan
2
Institute for Materials Research, Tohoku University, Japan
9:10—9:30 [20-AM-II-2]“Mg2Si thermoelectric device fabrication with reused-silicon”
Shigeyuki Nakamura,1 Yoshihisa Mori,2 and Ken’ichi Takarabe2
1
Tsuyama National College, 2Okayama University of Science, Japan
9:10—9:30 [20-AM-II-3]“Mechanical properties of Mg2Si with metallic binders”
Masashi Ishikawa, Takashi Nakamura, Yasuo Kogo, Tsutomu Iida, and Keishi Nishio
Tokyo University of Science, Japan
9:30—10:10 [20-AM-II-4] Invited“Semiconducting Mg2Sn and Mg2SnxSi1-x films on Si(111) substrates: formation and properties”
Nikolay G. Galkin, Konstantin N. Galkin, Dimitrii L. Goroshko, Igor M. Chernev, andAlexander V. Shevlyagin
Institute of Automation and Control Processes of Far Eastern Branch of RAS, Russia
10:10—10:30 [20-AM-II-5]“Solid phase growth of Mg2Si thin films on Si(111) and their optical, structural and electricalproperties”
Tetsuya Hashimoto and Hiroshi Katsumata
Meiji University, Japan

10:30—12:00 Poster Session II
Lunch Break 12:00—13:00

International Summer School
Session I: Invited Lecture 1
13:00—14:00 [20-PM-III-1] Plenary lecture“Silicides: Materials for thermoelectric energy conversion”
Mikhail I. Fedorov1,2 and Grigory N. Isachenko1,2
1
Ioffe Physical-Technical Institute of Russian Academy of Sciences, Saint-Petersburg, Russia
2
National Research University of Information Technologies, Mechanics and Optics, Saint-Petersburg,
Russia14:00—15:00 [20-PM-III-2] Plenary lecture“Metal silicide nanowires”
Lih J. Chen1 and Wen-Wei Wu2
1
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
2
Department of Materials Science and Engineering, National Chiao Tung Universtiy, Hsinchu, Taiwan
Break 15:00—15:20
15:20—16:20 [20-PM-III-3] Invited lecture“Transport properties of β-FeSi2”
Ernest Arushanov1 and Konstantin G. Lisunov2
1
Institute of Applied Physics, Academy of Sciences of Moldova, Kishinev, Moldova
2
Lappeenranta University of Technology, Lappeenranta, Finland
16:20—17:20 [20-PM-III-4] Invited lecture“Basics of optical properties of semiconductors and optoelectronic devices”
Kevin Homewood
University of Surrey, Surrey, UK

Conference Banquet

17:45—19:30

July 21
Session II: Invited Lecture 2
9:00—10:00 [21-AM-VI-1] Invited lecture“Electronic and optical properties of semiconducting silicides: theoretical predictions”
Dmitri B. Migas
Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
10:00—11:00 [21-AM-VI-2] Invited lecture“Light emission from β-FeSi2”
Yoshihito Maeda1,2
1
Kyushu Institute of Technology, Fukuoka, Japan
2
Advanced Science Research Center, Japan Atomic Energy Agency, Japan
11:00—11:20 Break
11:20—11:50 Closing

Session III: Theremoelectric Devices : Theory and Fabrication
13 :30--Poster Session I[19-P1]“Photoluminescence enhancement of β-FeSi2 nanocrystals controlled by holes transport in Cu-doped n-type Si
substrates”
Takahide Tatsumi1, Hiroyuki Kobayashi1, Kazumasa Narumi2, Seiji Sakai2, and Yoshihito Maeda1,2
1
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
2
Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1110, Japan[19-P2]“Enhancement of photoluminescence from Cu-doped nano-composite phase with β-FeSi2 nanocrystals
embedded in Si”
Tomoaki Hirata, Takahide Tatsumi, Hiroyki Kobayashi, and Yoshihito Maeda
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan[19-P3]“Super-enhancement of 1.5 μm emission from erbium co-implanted with oxygen in silicon-on-insulator”
M. A. Lourenço, Milan M. Milosevic, Arnaud Gorin, R. M. Gwilliam, and K. P. Homewood
Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey, Guildford,
Surrey, GU2 7XH, UK[19-P4]“Photoluminescence property of nano-composite phases of β-FeSi2 nanocrystals embedded in SiO2”
Tatsuya Nakamura, Takahide Tatsumi, Kosuke Morita, Hiroyuki Kobayashi, and Yoshihito Maeda
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan[19-P5]“FTIR Analysis of oxidation behaviors of nono-composite phases with β-FeSi2 nanocrystals and Si”
Kosuke Morita, Tatsuya Nakamura, Hiroyuki Kobayashi, Takahide Tatsumi, and Yoshihito Maeda
Department of Computer Science and Electronics, Kyushu Institute of Technology, Fukuoka 820-8502, Japan[19-P6]“Extended X-ray absorption fine-structure study of carbon-doped β-FeSi2”
Tarek M. Mostafa1, Mahmoud Shaban2, Motoki Takahara1, Suguru Funashiki1, Aki Tominaga1, Toshihiro Okajima3,
and Tsuyoshi Yoshitake1
1
Department of Applied Science for Electronics and Materials, Kyushu University, Fukuoka 816-8580, Japan2
Department of Electr. Eng., Aswan Fac. Of Eng., Aswan Univ., Aswan 81542, Egypt
3
Kyushu Synchrotron Light Research Center, Saga 841-0005, Japan[19-P7]“Electric properties of carbon-doped n-type β-FeSi2/p-type Si heterojunction diodes”
Motoki Takahara1, Suguru Funasaki1, Trarek M. Mostafa1, Mahmoud Shaba2, Nathaporn Promros3, and Tsuyoshi
Yoshitake1
1
Dept.of Appl. Sci. for Electr. and Mat., Kyushu Univ., 6-1Kasuga, Fukuoka 816-8580, Japan
2
Dept.of Electr. Eng., Aswan Faculty of Eng., Aswan Univ., Aswan 81542, Egypt
3
Dept.of Phys., Fac. of Sci., King Mongkut’s Inst. of Tech. Ladkrabang, Chalongkrung Road, Bangkok 10520,
Thailand[19-P8]“Growth of β-FeSi2 polycrystalline thin films with low residual carrier density by magnetron sputtering”
Tetsu Hattori, Takahiko Higashi, Hiroaki Tsukamoto, Haruki Yamaguchi, and Yoshikazu Terai
Graduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, Japan[19-P9]“Investigation of surface Fermi level in β-FeSi2 epitaxial films by Franz-Keldysh oscillations”
Hiroaki Tsukamoto, Haruki Yamaguchi, Tetsu Hattori, Takahiko Higashi, and Yoshikazu Terai
Graduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, Japan[19-P10]“Effect of β-FeSi2/Si heterointerface on electrical properties in β-FeSi2 polycrystalline thin films grown bymagnetron sputtering”
Takahiko Higashi, Hattori Tetsu, Hiroaki Tsukamoto, Haruki Yamaguchi, and Yoshikazu Terai
Graduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, Japan[19-P11]“Temperature dependence of Raman spectra in β-FeSi2 epitaxial films”
Haruki Yamaguchi, Hiroaki Tsukamoto, Tetsu Hattori, Takahiko Higashi, and Yoshikazu Terai
Graduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, Japan[19-P12]“Characterization of band structure of K8Ga8Si38 clathrate by optical measurement”
Masaru Iioka1, Haruhiko Udono2, Motoharu Imai3, and Masato Aoki3
1
Ibaraki University, Graduate school of Science and Engineering, Hitachi, Ibaraki 316-8511, Japan
2
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan3
Gifu University, Faculty of Engineering, 1-1 Yanagido, Gifu, Gifu 501-1193, Japan[19-P13]“Microstructures and photoelectric properties of spherical silicon solar cells”
Takeo Oku1, Yuuki Yamamoto1, Tsuyoshi Akiyama1, Youichi Kanamori2,
Mikio Murozono2, Masahiro Yamada2, Sakiko Fukunishi3, and Kazufumi Kohno3
1Department of Materials Science, TheUniversity of Shiga Prefecture, Hikone, Shiga 522-8533, Japan
2
Clean Venture 21 Corporation, Kyoto 601-8121, Japan
2
Osaka Gas Co., Ltd., 6-19-9 Torishima, Konohana-ku, Osaka 554-0051, Japan
3
Osaka Gas Chemicals Co., Ltd., 5-11-61Torishima, Konohana-ku, Osaka 554-0051, Japan[19-P14]“Fabrication and characterization of silicon naphthalocyanine and fullerene-based organic solar cells withinverted structures”
Haruto Maruhashi, Atsushi Suzuki, Tsuyoshi Akiyama, and Takeo Oku
Department of Materials Science, The University of Shiga Prefecture, Hikone, Shiga 522-8533, Japan[19-P15]“Effects of triphenylborane Addition to decaphenylcyclopentasilane thin films”
Takeo Oku1, Naoki Hibi1, Atsushi Suzuki1, Tsuyoshi Akiyama1, Masahiro Yamada2, Sakiko Fukunishi3, and Kazufumi
Kohno3
1
Department of Materials Science, The University of Shiga Prefecture,
Hassaka 2500, Hikone, Shiga 522-8533, Japan
2
Osaka Gas Co., Ltd., 6-19-9 Torishima, Konohana-ku, Osaka 554-0051, Japan
3
Osaka Gas Chemicals Co., Ltd., 5-11-61Torishima, Konohana-ku, Osaka 554-0051, Japan[19-P16]“Investigation on the J-V characteristics of BaSi2 Schottky junctions with different metal electrodes”
Weijie Du1, Masakazu Baba1, Ryouta Takabe1, Ning Zhang1, Kaoru Toko1,
Noritaka Usami2,3, and Takashi Suemasu1,21Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
2
Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
3
JST-CREST, Chiyoda-ku, Tokyo 102-0075, Japan[19-P17]“Characterization of defect levels in BaSi2 epitaxial films on Si(111) by deep level transient spectroscopy”
Hiroki Takeuchi1, Weijie Du1, Masakazu Baba1, Ryota Takabe1, Kaoru Toko1, and Takashi Suemasu1,2
1
University of Tsukuba, Institute of Applied Physics, Tsukuba 305-8573, Japan
2
JST-CREST, Tokyo 102-0075, Japan[19-P18]“Effect of grain areas on minority-carrier lifetime in undoped n-BaSi2 on Si(111)”
Ryota Takabe1, Kosuke O. Hara2, Masakazu Baba1, Weijie Du1, Naoya Shimada1, Kaoru Toko1, Noritaka Usami2,3,
and Takashi Suemasu1,3
1
University of Tsukuba, Institute of Applied Physics, Tsukuba 305-8573, Japan
2
Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
3
JST-CREST, Tokyo 102-0075, Japan[19-P19]“Investigation of surface potential distributions of impurity-doped n-BaSi2 thin-films by Kelvin probe force
microscopy”
Daichi Tsukahara1, Masakazu Baba1, Ryota Takabe1, Kaoru Toko1, Kosuke O. Hara2, Noritaka Usami2,3, Kentaro
Watanabe1,4, Takashi Sekiguchi4, and Takashi Suemasu1,3
1
University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
2
Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
3
JST-CREST, Tokyo, 102-0075, Japan
4
National Institute for Materials Science, Ibaraki 305-0044, Japan[19-P20]“Crystal growth of undoped and impurity doped BaSi2 films on poly-crystalline Si”
Masakazu Baba1, Kosuke O. Hara2, Daichi Tsukahara1, Kaoru Toko1, Noritaka Usami2,3, and Takashi Suemasu1,2
1
University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
2
Graduated School of Engineering, Nagoya University, Nagoya 464-8603, Japan
3
JST-CREST, Chiyoda-ku Tokyo 102-0075, Japan[19-P21]“Syntheses of silicide and silicon based nanostructures using metal chloride sources”
Hirokazu TATSUOKA1, Hiroaki SUZUKI1, Wen LI2, Junhua Hu2, Erchao MENG2, and Xiang MENG2
1
Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
2
Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan[19-P22]“Substrate-Source distance dependence of morphological and structural properties of Si nanowires / microrods
grown with Au catalyst using MnCl2 and Si powders”
Hiroaki Suzuki1, Erchao Meng2, Xiang Meng2, and Hirokazu Tatsuoka1
1Graduate School of Engineering, Shizuoka University, Hamamatsu, 432-8561, Japan
2
Graduate School of Science and Technology, Shizuoka University, Hamamatsu, 432-8011, Japan[19-P23]“Shape controlled growth of Si nanowires using MnCl2 and Si powder source and Au catalyst”
Erchao Meng1, Xiang Meng1, Hiroaki Suzuki2, and Hirokazu Tatsuoka2
1
Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan
2
Faculty of Engineering, Shizuoka University, 3-5-1 Johoku Hamamatsu 432-8561, Japan[19-P24]“The Laser ablation as a perspective technique for the deposition of metal-silicide nanoparticles in situ
embedded in PECVD of Si:H thin films”
The Ha Stuchlikova1, Radek Fajgar2, Martin Kostejn2, Vladislav Drinek2, Zdenek Remes1, and Jiri Stuchlik1
1Institute of Physics ASCR, v. v. i., Cukrovarnika 10/112, 162 00 Praha 6, Czech Republic
2
Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojava 135, 165, 02 Praha 6, Czech Republic[19-P25]“Deposition of modified Si:H thin films with embedded silicide nanoparticles formed by the combination of
Vacuum Evaporation and Plasma Treatment”
The Ha Stuchlikova, Zdenek Remes, and Jiri Stuchlik
Institute of Physics ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6, Czech Republic[19-P26]“Morphological and structural observation of metal clusters on SrTiO3 surfaces by STM/TEM combined
system”
Miyoko Tanaka
1
Surface Physics and Structure Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0003, Japan[19-P27]“Effect of impurity addition on shape modification of Si nanowires/microrods by using faceted silicide catalysts
nucleated in Au-Si catalyst solution”
Hiroaki Suzuki1, Erchao Meng2, Xiang Meng2, and Hirokazu Tatsuoka1
1Graduate School of Engineering, Shizuoka University, Hamamatsu, 432-8561, Japan

2

Graduate School of Science and Technology, Shizuoka University, Hamamatsu, 432-8011, Japan[19-P28]“Removal of Ge islands in Al-induced crystallized Ge thin films on glass substrates by selective etching
technique”
Koki Nakazawa, Kaoru Toko, and Takashi Suemasu
University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan[19-P29]“Effect of substrate thickness on Al-induced-crystallized Ge thin films on flexible polyimide substrates”
N. Oya1 K. Toko1, N. Usami2, and T. Suemasu1
1
University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan
2
Nagoya University, Furo-cho, Chikusa-ku, Aichi, 464-8603 Japan[19-P30]“Ion channeling analysis of disordering behavior at Fe3Si/Si(111) heteroepitaxial interfaces”
Yuki Kawakubo1, Yuya Noguchi1, Kazumasa Narumi2, Seiji Sakai2, and Yoshihito Maeda1,2
1
Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan
2
Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1110, Japan[19-P31]“Magnetoresistance effects in current-perpendicular-to-plane structures based on Fe3Si/FeSi2 artificial lattices”
Ken-ichiro Sakai1,2, Yuki Asai1, Yuta Noda1, Kaoru Takeda3, and Tsuyoshi Yoshitake1
1
KyushuUniv., Dept. of Appl. Sci. for Electr. and Mat., Kasuga, Fukuoka 816-8580, Japan
2
Kurume Nat. Coll. f Tech., Dept. of Cont. and Inf. Syst. Eng., Kurume, Fukuoka 830-8555, Japan
3
FukuokaInst.of Tech., Dept. of Electrical Engineering, Fukuoka 811-0295, Japan[19-P32]“Current-induced-magnetization switching at low current densities in current-perpendicular-to-planestructural Fe3Si/FeSi2 artificial lattices”
Yuki Asai1, Ken-ichiro Sakai1,2, Yuta Noda1, Kaoru Takeda3, and Tsuyoshi Yoshitake1
1
KyushuUniv., Dept. of Appl. Sci. for Electr. and Mat., Kasuga, Fukuoka 816-8580, Japan
2
Kurume Nat. Coll. of Tech., Dept. of Cont. and Inf. Syst. Eng., Kurume, Fukuoka 830-8555, Japan
3
FukuokaInst.of Tech., Dept. of Electr. Eng., Fukuoka 811-0295, Japan[19-P33]“Temperature-dependent interlayer coupling in Fe3Si/FeSi2 artificial lattices”
Ken-ichiro Sakai1,2, Yuki Asai1, Yuta Noda1, Hiroyuki Deguchi3, Kaoru Takeda4, and Tsuyoshi Yoshitake1
1
KyushuUniv., Dept. of Appl. Sci. for Electr. and Mat., Kasuga, Fukuoka 816-8580, Japan
2
Kurume Nat. Coll. of Tech., Dept. of Cont. and Inf. Syst. Eng., Kurume, Fukuoka 830-8555, Japan
3
Kyushu Inst. of Tech., Fac. of Eng., Kitakyushu, Fukuoka 804-8550, Japan
4
FukuokaInst.of Tech., Dept. of Electr. Eng., Fukuoka 811-0295, Japan[19-P34]“Formation of spin valve junctions based on Fe3Si/FeSi2/Fe3Si artificial films”
Yuki Asai1, Ken-ichiro Sakai1,2, Kazuya Ishibashi1, Yuta Noda1, Kaoru Takeda3, and Tsuyoshi Yoshitake1
1
KyushuUniv., Dept. of Appl. Sci. for Electr. and Mat., Kasuga, Fukuoka 816-8580, Japan
2
Kurume Nat. Coll. of Tech., Dept. of Cont. and Inf. Syst. Eng., Kurume, Fukuoka 830-8555, Japan
3
FukuokaInst.of Tech., Dept. of Electr. Eng., Fukuoka 811-0295, Japan

Poster Session II[20-P1]“Bulk crystal growth and characterization of Mg 2Si and MnSi1.75-x for IR detector and thermoelectric
applications”
Haruhiko Udono
Ibaraki University, Ibaraki, Japan[20-P2]“Evaluation of Mg2Si pn-junction depth by sputter etching”
N. Hori1, S. Hasunuma1, F. Esaka2, and H. Udono1
1
IbarakiUniversity, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan
2
Japan Atomic EnergyAgency (JAEA), Tokai, Ibaraki 319-1195, Japan[20-P3]“Influence of Sb distribution on thermoelectric property in melt-grown Mg2Si”
Hiroshi Okazaki, Kaoru Kambe, and Haruhiko Udono
Graduate School of Science and Engineering, Ibaraki University, Ibaraki 316-8511, Japan[20-P4]“Effect of Bi and Sb impurity on thermal conductivity in melt grown Mg 2Si”
H. Otake1, T. Otsubo1, S. Hasunuma1, M. Itakura2, and H. Udono1
1
Ibaraki University, Graduated school of Science and engineering, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan
2
Kyushyu University, Department of Applied Science for Electronics and Materials, Kasuga, Fukuoka 816-8580, Japan[20-P6]“Fabrication and characterization of Mg2Si pn-junction photodiode with a ring electrode”
K. Daitoku1, M. Takezaki1, S. Tanigawa2, D. Tsuya2, and H. Udono1
1
Ibaraki University, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan
2
National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan[20-P7]“Semiconducting CrSi2, Mg2Si and Ca2Si nanocrystallites for solar cells based on hydrogenated amorphoussilicon on glass substrates”
Nikolay G. Galkin1, Konstantin N. Galkin1, Igor M. Chernev1, Radek Fajgar2, The Ha Stuchlikova3, Zdenek Remes3,
and Jiri Stuchlik3
1
Institute of Automation and Control ProcessesofFar Eastern Branch of RAS, Vladivostok, 690041,Radio, 5, Russia
2
Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojová 135, 165 02 Praha 6, Czech Republic
3
Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6, Czech Republic[20-P8]“Fabrication and evaluation of B-doped p-BaSi2 films by RF sputtering on glass substrate”
N. A. A. Latiff1, T. Yoneyama1, M. Mesuda2, H. Kuramochi2, K. Toko1, and T. Suemasu1,3
1
University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan2
Tosoh Corporation, Shunan, Yamaguchi 746-8501, Japan
3
CREST-JST, Chiyoda, Tokyo 102-0075, Japan[20-P9]“High-pressure synthesis of clathrates in the Na-Al-Si system”
Motoharu Imai1, Mitsuaki Nishio1, Takahiro Yamada2, and Hisanori Yamane2
1
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0081, Japan
2
Tohoku University, IMRAM, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan[20-P10]“Synthesis of Na2Mg3X2 (X=Sn, Pb) and Na4Mg4Sn3, and their thermoelectric properties”
Takahiro Yamada, Ryo Ishiyama, and Hisanori Yamane
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai
980-8577, Japan[20-P11]“Synthesis and crystallization of Mg2Si by the liquid encapsulated vertical gradient freezing method”
Reo Nakagawa1, Hiroshi Katsumata1, Satoshi Hashimoto2, and Shiro Sakuragi2
1

Department of Electronics and Bioinformatics, Meiji University, Kawasaki 214-8571, Japan

2

Union Materials Inc., Tone-machi, Kita-souma, Ibaraki 300-1602, Japan[20-P12]“First-principles study on stability of p-type impurity-doped Mg2Si consisting of Mg defect”
Naomi Hirayama1, Tsutomu Iida1, Hiroki Funashima2, Shunsuke Morioka1,
Mariko Sakamoto1, Keishi Nishioq, Yasuo Kogo1, Yoshifumi Takanashi1, and Noriaki Hamada3
1
Tokyo University of Science, Katsushika Campus, 6-3-1 Niijyuku, Katsushika, Tokyo 125-8585, Japan2
Department of Engineering Science, Graduate School of Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka
560-0043, Japan
3
Tokyo University of Science, Noda Campus, 2641 Yamazaki, Noda-shi, Chiba 278-8510, Japan[20-P13]“Theoretical analysis of the structure and formation energy of impurity-doped Mg2Si: Comparison of
first-principles codes for material properties”
Naomi Hirayama1, Tsutomu Iida1, Hiroki Funashima2, Shunsuke Morioka1, Mariko Sakamoto1, Keishi Nishio1, Yasuo
Kogo1, Yoshifumi Takanashi1, and Noriaki Hamada3
1
Tokyo University of Science, Katsushika Campus, 6-3-1 Niijyuku, Katsushika, Tokyo 125-8585, Japan2
Department of Engineering Science, Graduate School of Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka
560-0043, Japan
3
Tokyo University of Science, Noda Campus, 2641 Yamazaki, Noda-shi, Chiba 278-8510, Japan[20-P14]“Crystal structures and electrical properties of Mg2Si epitaxial films prepared by sputtering method”
Shota Ogawa1, Atsuo Katagiri1, Masaaki Matsushima1, Kensuke Akiyama1,2, and Hiroshi Funakubo1
1
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
2
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, Japan[20-P15]“Formation and thermoelectric properties of stacked β-FeSi2 nanodots on Si substrates”
Shuto Yamasaka1, Yoshiaki Nakamura1,2, Shinya Tsurusaki1, Shotaro Takeuchi1, and Akira Sakai1
1Osaka University, Graduate School of Engineering Science, Toyonaka, Osaka 560-8531, Japan
2
PRESTO-JST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012, Japan[20-P16]“Formation of epitaxial nanodots on Si substrates with well-controlled interfaces and their properties”
Yoshiaki Nakamura1,2 and Masakazu Ichikawa3
1,2
Osaka University, Osaka 560-0043, Japan
3
The University of Tokyo, Tokyo, Japan[20-P17]“Epitaxial growth of Fe-based nanodots on Si substrates by controlling nanointerface”
Hideki Matsui1, Yoshiaki Nakamura1,2, S. Takeuchi1, and A. Sakai1
1Osaka University, Graduate School of Engineering Science, 1-3 Toyonaka, Osaka 560-0043, Japan
2
PRESTO-JST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012, Japan[20-P18]“3D visualization of crystal structures of semiconducting silicides on WEBGL-enabled modern web browsers”
Ryutarou Ban and Hiroharu Sugawara
Graduate School of System Design, Tokyo Metropolitan University, Tokyo 191-0065, Japan[20-P19]“Ga doped Si1-xGex bulk crystal with homogenous composition and its thermoelectric properties”
M. Omprakash1,2, V. Nirmal Kumar1,2, M. Arivanandhan1,3, T. Koyama1, Y. Momose1, H. Ikeda1,3, H. Tatsuoka3,Y.
Okano4, T. Ozawa5, Y. Inatomi6, S. Moorthy Babu7, and Y. Hayakawa1,3
1
Research Institute of Electronics, Shizuoka University, Hamamatsu-432 8011, Japan
2
Graduate School of Science and Technology, Shizuoka University, Hamamatsu-432 8011, Japan
3
Faculty of Engineering, Shizuoka University, Hamamatsu-432 8011, Japan
4
Osaka University, Osaka, Japan
5
Shizuoka Institute of Science and Technology, Fukuroi, Shizuoka 437-8555, Japan
6
Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Kanagawa 229-8510, Japan
7
Crystal Growth Centre, Anna University, Chennai, India[20-P20]“Processing of fine β-FeSi2 powders and formation of β-FeSi2 by electric discharge plasma activated sintering”
Matsumoto1, H. Katsumata1, M. Sawada1, T. Takahashi2, H. Souma2, I. Azumaya2, and M. Ishiyama2
1
Department of Electronics and Bioinformatics, Meiji University, Kawasaki 214-8571, Japan
2
Elexnic, Inc., 2-20-4 Komatsubara, Zama 252-0002, Japan[20-P21]“Synthesis of Mg2Si with spark plasma sintering method”
Tomoyuki Nakamura1,2, Masahiro Minowa2, Jyunya Matsuno1, Asumi Sasaki1, Koya Arai1, and Keishi Nishio1
1
Tokyo University of Science, Department of Materials Science and Technology, 6-3-1 Niijuku, Katsushika-ku, Tokyo
125-8585, Japan
2
SWCC SHOWA CABLE SYSTEMS CO., LTD. 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara-shi, Kanagawa-ken,
252-0253 Japan[20-P22]“Synthesis and characterization of Sb doped Mg2Si by spark plasma sintering method”
Koya Arai, Asumi Sasaki, Yuto Kimori, Tsutomu Iida, and Keishi Nishio
Tokyo University of Science, Department of Materials Science and Technology, 6-3-1 Niijuku, Katsushika-ku, Tokyo
125-8585, Japan[20-P23]“Metathesis reaction route to Mg2Si fine particles: formation mechanism and their lithium storage properties”
Hiroshi Itahara1, Takahiro Yamada2, Song-Yul Oh1, Ryoji Asahi1, Haruo Imagawa1, and Hisanori Yamane2
1
Toyota Central Research & Development Labs., Inc., 41-1 Yokomichi Nagakute, Aichi 480-1192, Japan.
2
Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.

[20-P24]“Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications”
Takashi Suemasu1,2
1
University of Tsukuba, Institute of Applied Physics, Tsukuba 305-8573, Japan
2
JST-CREST, Tokyo, 102-0075, Japan[20-P25]“Energetic evaluation of the possibility of interstitial compound formation of BaSi2 with 2p-, 3s-, and 3delements by first-principle calculations”
Yoji Imai1,2, Mitsugu Sohma1, and Takashi Suemasu2
1
University of Tsukuba, Institute of Applied Physics, Tsukuba 305-8573, Japan
2
National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565, Japan[20-P26]“Time-resolved photoluminescence properties of β-FeSi2 thin films”
Yoshikazu Terai1 and Yoshihito Maeda2
1
Graduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065, Japan2
Department of Computer Science and Electronics, Kyushu Institute of Technology, Fukuoka 820-8502, Japan[20-P27]“Photonic crystals composed of β-FeSi2 with amorphous Si cladding layers”
H. Tokushige1, T. Endo1, K. Hiidome1, K. Saiki1, S. Kitamura1, T. Katsuyama1, N.Ikeda2, Y. Sugimoto2, and Y. Maeda3
1
Graduate School of Engineering, University of Fukui, Fukui 910-8507, Japan
2
National Institute for Materials Science, Tsukuba 305-0047, Japan
3
Graduate School of Computer Science and System Engineering, Kyushu Institute of Technology, Fukuoka 820-8502,
Japan[20-P28]“Characterization of the silicon/β-FeSi2 nanocrystallites heterostructures in the NIR photodetection at low
temperature”
Alexander Shevlyagin1, Dmitry Goroshko1,2, Evgeniy Chusovitin1, Konstantin Galkin1, and Nikolay Galkin1,2
1
Institute of Automation and Control Processes FEB RAS, Radio St. 5, 690041 Vladivostok, Russia
2
Far Eastern Federal University, Suhanova St. 8, 690950 Vladivostok, Russia[20-P29]“Feasibility study of thermal radiation control by high refractive index silicides”
Motofumi Suzuki, Shinta Suganuma, and Yasuyuki Kaneko
Kyoto University, Kyoto 615-8540, Japan[20-P30]“High-pressure synthesis of Mg2Si thermoelectric material”
Y. Mori, K. Takarabe
Okayama University of Science, Okayama 700-0005, Japan