ELECTRONICS

SiC High Channel Mobility MOSFET
Toru HIYOSHI*, Takeyoshi MASUDA, Keiji WADA, Shin HARADA, Takashi TSUNOand Yasuo NAMIKAWA

SiC metal oxide semiconductor (MOS) devices are promising candidates for high power, high speed, and hightemperature switches owing to their superior properties such as wide bandgap, high breakdown electric field, highsaturation velocity and high thermal conductivity. However, the excellent device characteristics expected from these
physical properties have not been realized, due to the issues related to SiO2/SiC interface. Although several methods toimprove the interface state have been reported, the issues of SiO2/SiC interface have not been solved. In this paper, theauthors improved the interface properties by using a 4H-SiC(0-33-8) face. The fabricated MOS field effect transistor(MOSFET) showed high channel mobility compared to the conventional crystal face (4H-SiC(0001)). In addition, theMOSFET showed a low on-resistance of 4 mΩ‧cm2 with a blocking voltage of 890 V.
Keywords: silicon carbide, MOSFET, transistor

1. Introduction
Within the context of global warming, the expectations for renewable natural energy, such as wind or solar
power generation, have increased. However, natural energy is not stable and is easily influenced by weather. Furthermore, the amount of these power generations issmaller than that of traditional power generations, such as
thermal and nuclear power. Thus, a high-efficiency power
conversion system is strongly required to utilize these natural energies effectively. The power conversion system consists of power devices and controls electric power byswitching the power devices. The inverters or converters
widely used in industrial equipment also consist of powerdevices. Therefore, it is important for the high-efficiency
power conversion system to reduce the power loss in powerdevices. Although almost all existing power devices havebeen made of silicon (Si), the efficiency of the Si power devices is approaching the theoretical limit determined by
the physical properties of Si.
Silicon carbide (SiC) is a promising material for highpower, high temperature, or high speed switches, owing tosuperior properties such as wide bandgap, high saturation
velocity, high breakdown field, and high thermal conductivity(1). The high breakdown field (ten times higher thanthat of Si) allows a thinner device and thus lower on-resistance. Moreover, SiC power devices can be operated at
highly elevated temperatures, which enables the simplification of cooling systems. These properties fit the requirements of renewable natural energy. Since the first
demonstration of SiC Schottky Barrier Diode (SBD) in1993, SiC power devices have been developed energetically. SiC SBDs are already commercially available(2). Recently, the SiC metal oxide semiconductor field effecttransistors (MOSFETs), the ideal choice for power devices,
have also been introduced in the marketplace.
In the past, SiC MOSFETs have been fabricated on 4HSiC(0001). However, the on-resistance is much higher thanthe expected value because of the low channel mobility, whichis due to the high interface state density (D it) at the SiO2/SiC

122 · SiC High Channel Mobility MOSFETinterface. In order to reduce the D it, 4H-SiC(11-20)(3) or
4H-SiC(000-1)(4) was employed and nitridation(5) or POCl3annealing(6) after the oxidation was also reported. Howevera fundamental solution has not been found.
As mentioned above, the selection of surface orientation strongly influences the characteristics of SiC MOSFETs. The authors selected the 4H-SiC(0-33-8) to reduce
the D it and to improve the channel mobility. By using the4H-SiC(0-33-8), the D it was significantly suppressed and thechannel mobility was notably enhanced compare to conventional 4H-SiC(0001). In this paper, the authors reporton the SiO2/4H-SiC(0-33-8) interface properties and characteristics of the MOSFETs on 4H-SiC(0-33-8).

2. Structure and Fabrication of MOS Devices
Figure 1 shows the cross-sectional structures of the fabricated MOS devices. Figure 1 (a) depicts a MOS capacitor,
which is a MOS device to investigate the SiO2/SiC interface
properties. Figure 1 (b) is a lateral MOSFET for measuring
channel mobility and threshold voltage (V th). Figure 1 (c)shows a vertical MOSFET.
The operation principle of the MOSFET is shown inFig. 2. When turning on the MOSFET, gate voltage (V G)
greater than the threshold voltage should be applied to thegate electrode. This results in the formation of inversion
channels, and the drain current (I D) flows from the drain
to the source electrode. On the other hand, when turning
off the MOSFET, the gate voltage should be lower than thethreshold voltage. In this way, the MOSFET switches to on
state and off state.
The power MOSFET should be a normally-off type,which means that the MOSFET keeps the off state under
the gate voltage of 0 V. The authors employed a highly
doped p-well region to create the normally-off characteristics. Moreover, the authors also investigated the stability ofthe threshold voltage under high temperatures since SiC
power devices are expected to operate safely under highGate
Gate oxiden-type epitaxial layern-type 4H-SiC(0338) substrate(a)
Source

Drain

Gate

p+-typeregion

Gate oxiden+-type region

L chp-type region(p-well)n-type epitaxial layern-type 4H-SiC(0338) substrate(b)

SourceInterlayer dielectric
Gate

Gate oxiden+-type region

Lchtemperatures.
The 4H-SiC(0-33-8) is the face tilted by 54.7˚ toward
the <1-100> direction from the (0001) as shown in Fig. 3.
This face corresponds to the Si(001) face (cubic structure).
It is commonly known that the D it of the SiO2/Si(001) interface is the lowest(7), compared to other Si faces. Similarly, the D it of the SiO2/4H-SiC(0-33-8) interface is
expected to be the lowest value.
Epitaxial layers were grown on 4H-SiC(0-33-8) substrates by chemical vapor deposition (CVD). The thickness and doping of the epitaxial layer were 10 µm and7 - 9 × 1015 cm-3, respectively. The p-type and n-type regions
were formed by Al and P ion implantation, respectively.
The concentration of the p-well region was changed from3 × 1016 to 1 × 1018 cm-3 in order to control the thresholdvoltage. The gate oxide was formed by dry oxidation followed by nitridation(5) and Ar annealing as post oxidation
annealing (POA). The thickness of the gate oxide wasabout 45 nm. The gate electrode was n-type poly-Si. The
channel lengths (L ch) of the lateral and vertical MOSFET
were 100 µm and 1 µm, respectively. The vertical MOSFETs
were mounted on a metal package made of CuW in orderto characterize the on-resistance precisely. For comparison,the authors also fabricated the same MOS devices on 4HSiC(0001).

p+-type region
p-type region(p-well)n-type epitaxial layer(0001)

n-type 4H-SiC(0338) substrate
Drain(0338)(c)Fig. 1. MOS devices(a) MOS capacitor, (b) lateral MOSFET, (c) vertical MOSFET.

54.7˚

Fig. 3. 4H-SiC(0-33-8)

VGS > Vth

3. Characterization of MOS Devices
VDChannel layer

Flow of electronsID

3-1 Characterization of SiO2/SiC interfaceFigure 4 shows the D it distributions for MOS capacitorson (0-33-8) and (0001). The horizontal and vertical axis
means the energy of the interface state (E c: energy of theconduction band) and the D it, respectively. The D it was estimated by the high-low method. The high-low method isa well-known method to estimate the D it by comparing thecapacitance-voltage (CV) characteristics obtained with highand low frequency. The D it of the SiO2/4H-SiC(0-33-8) interface was notably lower than that of SiO2/4H-SiC(0001).
This result indicates that the channel mobility of the MOSFET on 4H-SiC(0-33-8) will be improved. (In the case thatthe D it is low, the channel mobility tends to be high(8).)

Fig. 2. Operating principle of MOSFETSEI TECHNICAL REVIEW · NUMBER 77 · OCTOBER 2013 · 123

(0001)(0338)

1×1012

1×1011

1×1010

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

EC-E (eV)Fig. 4. The interface state density of SiO2/SiC on (0-33-8) and (0001)

100

580

4603402Vth20

1×10100µFE

01×1016-3

1×1017

1×10-7401×10-9Fig. 6. The p-well doping dependence of the threshold voltage and thechannel mobility

4Vth = 3 V
1×10-11200-505101520

1×10-13

VGS (V)

Fig. 5. The I D -V G characteristic of Lateral MOSFET on (0-33-8)

Threshold Voltage (V)Channel Mobility µFE (cm2/Vs)

60

01×1019

1×1018I D (A)

1×10-5

1P-well doping (cm-3)

VDS = 0.1 V
80

Vth (V)

3-2 Characterization of threshold voltage and channel mobility
In this section, the authors measured the thresholdvoltage and estimated the channel mobility µ FE (field effect mobility) by use of the lateral MOSFET (p-well: 5 ×1017 cm-3) on 4H-SiC(0-33-8). The I D -V G characteristic andthe estimated channel mobility are shown in Fig. 5. In
spite of the highly doped p-well, the channel mobility wasaround 80 cm2/Vs at a gate voltage of 15-20 V. The channel mobility obtained from the lateral MOSFET (p-well:5 × 1017 cm-3) on 4H-SiC(0001) was about 10 cm2/Vs. It isclear that the channel mobility can be improved by using
4H-SiC(0-33-8). As mentioned above, the power MOSFET
should be a normally-off type. The threshold voltage determined at the rise of the subthreshold current was 3 V.

ditions. Generally, the control of p-well doping is used toregulate the threshold voltage. (The highly doped p-wellmakes the threshold voltage high.) In this study, the authors investigated the p-well doping dependence of thethreshold voltage and the channel mobility.
Figure 6 shows the p-well doping dependence of thethreshold voltage and the channel mobility. The thresholdvoltage increased with increasing p-well doping. Specifically, in the case that p-well doping is greater than 5 × 1017
cm-3, the threshold voltage was greater than 3 V. The channel mobility decreased with increasing p-well doping. Thisis because the increase of the p-well doping causes impurity
scattering in the channel region. However, even though
there was a highly doped p-well, the channel mobility of
the 4H-SiC(0-33-8) lateral MOSFET was 60 cm2/Vs ormore. In the case of the lateral MOSFET on 4H-SiC(0001)
with a p-well doping of 5 × 1017 cm-3, the channel mobility
decreases significantly (typical value is 10 cm2/Vs or less(9)).
This particular characteristic (the normally-off characteristic combined with the high channel mobility) is an advantage for 4H-SiC(0-33-8).

µFE (cm2/Vs)

Interface State Density D it (cm-2eV-1)

1×1013

3.5

3

2.5

23-3 P-well doping dependence of threshold voltage andchannel mobility
The threshold voltage should be greater than 0 V (normally-off) for the power MOSFET under its operating con-124 · SiC High Channel Mobility MOSFET

050100150200250

Temperature (℃)

Fig. 7. The temperature dependence of the threshold voltage

Figure 7 shows the temperature dependence of thethreshold voltage obtained from the 4H-SiC(0-33-8) lateral MOSFET (p-well: 1 × 1018 cm-3). The threshold voltage obtained at 200˚C was 2.6 V. This result means that
the MOSFET can maintain the normally-off state at hightemperature.
3-4 Characterization of vertical MOSFETThe authors showed superiority of the 4H-SiC(0-33-8)
in the discussions above. In this section, forward and reverse characteristics of the vertical MOSFET are discussed.
Thickness and doping of the epitaxial layer used forthe vertical MOSFET were 10 µm and 9 × 1015 cm-3, respectively. The p-well doping was 5 × 1017 cm-3. The chip size
was 1.5 mm × 1.5 mm. Edge termination structure (not indicated in this paper) was employed to obtain high breakdown voltage.
Figure 8 shows the I D -V D characteristics of the vertical
MOSFET. The gate voltage was changed from 0 V to 15 V.

The drain current was under the detection limit at a gate
voltage of 0 V (normally-off). The current density obtainedat the gate voltage of 15 V and the drain voltage of 2 V was
500 A/cm2, which means the specific on-resistance was 4mΩ·cm2. In the case of the vertical MOSFET on 4HSiC(0001) with the same parameters, the specific on-resistance was 12-13 mΩ·cm2.
Figure 9 shows the reverse characteristics of the 4HSiC(0-33-8) vertical MOSFET. The blocking voltage wasabout 890 V. It is reported that the critical field of 4HSiC(0-33-8) is lower than that of 4H-SiC(0001)(10). The
parallel-plane breakdown voltage of the epitaxial layer(doping: 9 × 1015 cm-3, thickness: 10 µm) was about 1,000
V. Thus, the experimental blocking voltage was about 90%of the theoretical value.

4. Future Work

VG = 15 V

Drain Current Density (A/cm2)

800

12 V
9V700
600
500

6V

400
300
200
10000123450V

Drain-Source Voltage (V)Fig. 8. The I D -V D characteristics of the 4H-SiC(0-33-8) vertical MOSFET

Reverse Leak Current Density (µA/cm2)

5040Nowadays the Si Insulated Gate Bipolar Transistor(IGBT) is mainly used in inverter applications (parallelplane breakdown voltage: 1,200-3,300 V) such as renewableenergy, electric vehicles, industrial motors, or electricrailroads. High-efficiency and system downsizing arestrongly desired in these applications. Therefore, theproperties of SiC MOSFETs open up many possibilities forsolving these problems. It is an indubitable fact that theefficiency of the power systems can be improved by replacing the existing Si power devices with the SiC MOSFETs.
Moreover, as mentioned in the discussions above, the 4HSiC(0-33-8) allows high efficiency compared to the conventional 4H-SiC(0001). In addition, the MOSFET on
4H-SiC(0-33-8) showed stable operation and normally-off
state even at high temperatures. It means that cooling systems can be simplified and downsized.
In future work, the authors will optimize the structureand fabrication processes of the MOSFET on 4H-SiC(0-338). The expansion of the chip size and current density (lowon-resistance) are also important tasks because the inverters
and converters require a high current. Furthermore, highbreakdown voltages greater than 3,300 V are necessary forelectric railroads or electric transmission. In order to respond to these demands, the authors will work to increase
the breakdown voltage by increasing the thickness of theepitaxial layer and optimizing the edge termination structure. The authors are also exploring the new applications
that are made possible by the use of SiC power devices.

30205. Conclusion

100200400600800

1000

Drain-Source Voltage (V)The electrical properties of the SiO2/SiC interface
were dramatically improved by using 4H-SiC(0-33-8). The
MOSFET (p-well: 5 × 1017 cm-3) showed a high channel mobility of 80 cm2/Vs and a threshold voltage of 3 V. In addition, the MOSFET demonstrated stable operation at 200˚C.
Furthermore, the authors achieved the on-resistance of 4mΩ·cm2 and the blocking voltage of 890 V.

Fig. 9. The reverse characteristics of the 4H-SiC(0-33-8) vertical MOSFETSEI TECHNICAL REVIEW · NUMBER 77 · OCTOBER 2013 · 125

References
H. Matsunami and T. Kimoto, “Material Science and Engineering,”
R20, pp.125-166 (1997).
(2) thinQ!TM, http://www.infineon.com(3) H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara,“IEEE Electron Device Letters”, vol. 20, pp.611-613 (1999).
(4) K. Fukuda, M. Kato, K. Kojima and J. Senzaki, “Applied Physics Letters,” vol. 84, pp.2088-2090 (2004).
(5) T. Kimoto, Y. Kanzaki, M. Noborio, H. Kawano and H. Matsunami,“Japanese Journal of Applied Physics,” vol. 44, pp.1213-1218 (2005).
(6) D. Okamoto, H. Yano, K. Hirata, T. Hatayama and T. Fuyuki, “IEEEElectron Device Letters,” vol. 31, pp.710-712 (2010).
(7) E. Arnold, J. Ladell and G. Abowitz, “Applied Physics Letters,” vol.
13, pp.413-416 (1968).
(8) N. S. Saks, “Hall Effect Studies of Electron Mobility and Trapping at
the SiC/SiO2 Interface,” Silicon Carbide Recent Major Advances,W. J. Choyke, H. Matsunami and G. Pensl, pp.387-410 (2003).
(9) S.-H. Ryu, S. Dhar, S. Haney, A. Agarwal, A. Lelis, B. Geil, and C. Scozzie,“Materials Science Forum,” vols. 615-617, pp. 743-748 (2009).
(10) S. Nakamura, H. Kumagai, T. Kimoto, and H. Matsunami, “AppliedPhysics Letters,” vol. 80, pp. 3355-3357 (2002).
(1)

Contributors (The lead author is indicated by an asterisk (*).)

T. HIYOSHI*• Power Device Development Division

T. MASUDA• Assistant Manager, Power Device Development Division

K. WADA• Assistant Manager, Power Device Development Division

S. HARADA• Assistant General Manager, Power Device
Development Division

T. TSUNO• Doctor of Science, Manager
Power Device Development Division

Y. NAMIKAWA• Doctor of Engineering, Manager
Semiconductor Technologies R&D Laboratories

126 · SiC High Channel Mobility MOSFET