Properties of SiCN films prepared by Cathode Coupled P-CVD
Using Liquid Source Material
Research and Development Department, Samco Inc.
18th International Symposium on Plasma Chemistry (ISPC-18) で発表

Introduction【2007年8月26～31日 京都大学】

Application for optical film

Plasma Chemical Vapor Deposition (P-CVD) is a method for obtaining
the functional films such as SiN, SiO2. These films are indispensable in fields
such as semiconductor, optics and MEMS, etc.

Reflectivity of 4%
Reflectivity of 0%

SN1-SiN(80℃)
HMDS-SiN（80℃）
100Heated piping (100 °C)

Tranmitivity [%]Plasma Chemical Vapor Deposition (cathode-coupled P-CVD)
NH3
H2LS-SiN（0.1μm）

SN1-SiN
HMDS-SiN（300℃）

80

LS-SiN（0.03μm）

60

Substrate40

SiH4-SiN
Reflectivity of 10%

20

Shower head electrode0400

SN1HMDS
reservoir

Substrate
Exhaust

500

600

700

800

Wavelength [nm]LS-SiN（0.03μm）

Stage electrode

Constant temperaturebox (60 °C)
Coupling condenser

Substrate

RF Generator(13.56 MHz)Fig.7 Optical transparency of SiCN and SiH4-SiN.

・ SiCN film is possible on region substrates for instance, plastic.

Application for ELO-GaNDeposition rate (nm/min)

C/Si, N/Si (XPS)

0.8
0.6
0.4
0.2

250

0200-100

150-200

100-300

50-400000.25

0.5H2/(NH3+H2)

0.75

1.0-500
200

300

400500600

RF power (W)Fig.4 Variation of C/Si and N/Si in SiCN
films as a function of the flow ratio
H2/(NH3+H2)

Fig.5 Rerations between deposition
rate and film stress and RF power.

・ It is impossible to controlled the content of C/Si.
・ The films stress, negative values means compressive, increased from -240 MPato -405 MPa with RF power increase, and saturated at -405 MPa.

Application for MEMS
By chemical stability of SiCN films,
we consider that SiCN films can beapplied wet etching mask or selfsupporting films for MEMS devices.

Table 1 Wet etching rates for base/acid solutions.
Etchant

Concentration(wt%)

Etchant temp.
(°C)

Etching rate
(nm/min)

BHF

HF 7.1NH4F 34.3

250.018KOH30

850.058

TMAH

25800.018

Logarithmic X-ray Intensity (a.u.)

C/Si
N/Si

Application for Semiconductor
We deposited the SiCN films using
Cathode Coupled and Anode Coupled PCVDs. The SiCN films have uniquecharacteristics which SiH4 use SiN films
does not have. We consider that the SiCN
films are candidate material for the practicalapplications in various industrial fields.

5VCuCr

SN1-SiN
Passivation film＝HMDS-SiN

Glass

500 nm273 arcsec

Φ= 90°-4000 -2000

2000

0

SiH4-SiN

4000

FWHM
203 arcsec

Φ= 0°258 arcsec

Φ= 90°-4000 -2000

02000

4000

Δω (arcsec)

1.E+00
1.E-02
1.E-04
1.E-06
1.E-08
1.E-101.E-12-10-8-6-4-2

VoltageV)

02ofSiCN

ConclusionResistance value ［ohms］

85 ℃
85 %RH

FWHM
225 arcsec

Φ= 0°

Fig.9 I-V characteristic
passivated pin diode.

Application for diffusion barrier of metal
These results were considered thatthe diffusion of Cr metal or impurities
contained grass substrate was pro-tectedusing SiCN film, and considered that it
is a wet-proofing in the SiCN film.

SiCN

Fig.8 X-ray rocking-curve of ELO
GaN using SiCN and SiH4-SiN masks.

A)

1.0Film stress (MPa)Basic characteristics of SiCN films

X-raydirection
The result of ELO using the SiCNstripe film shows that the GaN(0001) Mask
crystal grows up, and there is noimperfect alignment from <0001>
Sapphiredirection because the both dif-fraction
peaks, φ=0° and φ=90°, are single.
On the other hand, even when SiH4 use
φ = 0°
SiN film is used as a ELO mask, φ = 90°
crystallinty of GaN(0001) is almostly
the same level in case of SiCN ELO
mask. However, because the diffraction
peak, φ=90°, is not single, it means
imperfect alignment from <0001>
GaN regrowth
direction.

CurrentFig.2 Concept of the plasma chemical vapor
deposition technique.

1011

HMDS-SiN
SN1-SiN （L&S=50 μm）

1010
109
108

Glass （L&S=40 μm）

107

Acknowledgements

106

The authors would like to thank Dr. H. Miyake in Mie University, for useful
discussion concerning GaN-ELO application.

105

Glass （L&S=50 μm）

104
0

500

1000

1500

2000

We deposited the SiCN films using Cathode Coupled and Anode Coupled
P-CVDs. The SiCN films have unique characteristics which SiH4 use SiN films
does not have. We consider that the SiCN films are candidate material for thepractical applications in various industrial fields.

2500

Testing time ［hours］

Fig.6 Life-time test of resistance for SiCN coated and bare glass.

3000

References[1]

A. Ogishi, S. Motoyama, M. Sawai, T. Tatsuta and O. Tsuji, Jpn. J. Appl. Phys. 42 (2003) L1090