VOL.60
2007.OCT.
Quar t e r l y

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サムコ株式会社
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辻 理
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アド・プロヴィジョン株式会社

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18th International Symposium on Plasma Chemistry (ISPC-18)

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↓Properties of SiCN films prepared by Cathode Coupled P-CVD
Using Liquid Source Material
Research and Development Department, Samco Inc.
18th International Symposium on Plasma Chemistry (ISPC-18)
2007 8 26 31
Introduction
Plasma Chemical Vapor Deposition (P-CVD) is a method for obtaining thefunctional films such as SiN, SiO2. These films are indispensable in fields suchas semiconductor, optics and MEMS, etc.

Application for optical film

Plasma Chemical Vapor Deposition (cathode-coupled P-CVD)

Fig.2 Concept of the plasma chemical vapor
deposition technique.

Basic characteristics of SiCN filmsFig.4 Variation of C/Si and N/Si in SiCN
films as a function of the flow ratio
H2/(NH3+H2)

Fig.5 Rerations between deposition
rate and film stress and RF power.

It is impossible to controlled the content of C/Si.
The films stress, negative values means compressive, increased from -240 MPa to-405 MPa with RF power increase, and saturated at -405 MPa.

Application for MEMS
By chemical stability ofSiCN films, we consider that
SiCN films can be applied
wet etching mask or selfsupporting films for MEMS
devices.

Table 1 Wet etching rates for base/acid solutions.
Etchant

Concentration Etchant temp.
(wt%)
( )

BHF

HF 7.1NH4F 34.3

250.018

KOH30850.058

TMAH

25800.018

Application for diffusion barrier of metal
These results were considered thatthe diffusion of Cr metal orimpurities contained grass substrate
was pro-tected using SiCN film, andconsidered that it is a wet-proofing in
the SiCN film.

Etching rate
(nm/min)Application for ELO-GaN
The result of ELO using
the SiCN stripe film showsthat the GaN(0001) crystal
grows up, and there is noimperfect alignment from<0001> direction because
the both dif-fraction peaks,=0 and =90 , are single.
On the other hand, evenwhen SiH4 use SiN film isused as a ELO mask,
crystallinty of GaN(0001)
is almostly the same levelin case of SiCN ELO
mask. However,because
the diffraction peak,=90 , is not single, it means
imperfect alignment from<0001> direction.

Logarithmic X-ray Intensity(a.u.)

Fig.7 Optical transparency of SiCN and SiH4-SiN.
SiCN film is possible on region substrates for instance, plastic.

Fig.8 X-ray rocking-curve of ELO GaN using
SiCN and SiH4-SiN masks.

Application for Semiconductor
We deposited the SiCN films using
Cathode Coupled and Anode Coupled
P-CVDs. The SiCN films have uniquecharacteristics which SiH4 use SiN films
does not have. We consider that theSiCN films are candidate material forthe practical applications in various
industrial fields.

Fig.9 I-V characteristic of SiCN passivated pin diode.

Technical-Report 6Conclusion
We deposited the SiCN films using Cathode Coupled and Anode Coupled
P-CVDs. The SiCN films have unique characteristics which SiH4 use SiN
films does not have. We consider that the SiCN films are candidate material
for the practical applications in various industrial fields.
Acknowledgements
The authors would like to thank Dr. H. Miyake in Mie University, for useful
discussion concerning GaN-ELO application.

Fig.6 Life-time test of resistance for SiCN coated and bare glass.

References[1] A. Ogishi, S. Motoyama, M. Sawai, T. Tatsuta and O. Tsuji, Jpn. J. Appl.
Phys. 42 (2003) L1090