New Gate Driving Technique Using Digital Gate
Driver IC to Reduce Both EMI in Specific Frequency
Band and Switching Loss in IGBTs
Ryuzo Morikawa, Toru Sai, Katsuhiro Hata, and Makoto Takamiya
The University of Tokyo, Tokyo, Japanrmori@iis.u-tokyo.ac.jp
for the EMI reduction in the specific frequency band, because
the gate waveform controls are based on the time-domain
analysis such as dVCE/dt and d2VCE/dt2, where VCE iscollector-to-emitter voltage of IGBT. In [1-2], the switchingloss (ELOSS) is not evaluated, though the EMI reduction in thespecific frequency band is achieved. Both EMI and ELOSS
should be considered, because they are in a trade-off
relationship [3].

Abstract— A new gate driving technique using a digital gate
driver IC is proposed to reduce both conductive EMI in userdefined specific frequency band and the switching loss in IGBTs
to achieve a highly efficient power converter complying withEMI regulations. The reduction is automatically achieved byrepeating the switching measurements and exploring optimum
gate driving vectors of the digital gate driver using a simulated
annealing algorithm. In the double pulse test of IGBT at 20 A
and 300 V, the reduction of EMI and the switching loss at four
different frequency bands (2 MHz to 5 MHz, 5 MHz to 7.5 MHz,
7.5 MHz to 10 MHz, and 10 MHz to 20 MHz) are demonstrated.
At the target frequency band of 7.5 MHz to 10 MHz, comparedwith the conventional single step gate drive, the proposed digital
gate drive reduces the spectrum area by 46 % and the maximum
EMI is reduced by −105 dBμV at the same switching loss.

To solve the problems, in this paper, a new gate driving
technique using a digital gate driver (DGD) IC [10] based on
frequency-domain analysis of VCE is proposed for the firsttime to reduce both conductive EMI in user-defined specificfrequency band and ELOSS in IGBTs, thereby achieving ahighly efficient power converter complying with EMI
regulations. The optimization of the gate driving waveforms
to solve the trade-off between EMI and ELOSS is automaticallydone using a software. In the measurements, the reduction of
EMI and ELOSS at four different frequency bands (2 MHz to 5
MHz, 5 MHz to 7.5 MHz, 7.5 MHz to 10 MHz, and 10 MHz
to 20 MHz) are demonstrated.

Keywords— Gate driver, IGBT, Conductive EMI, Optimization

I. INTRODUCTION
In the development process of power converters, theelectromagnetic interference (EMI) is a troublesome problem,
because the EMI measurement to check pass or fail the EMI
regulations is done after the final product of the power
converter is completed. When the power converter fails the
EMI regulations, two types of measures, hardware-based
approach and software-based approach, are considered. In the
hardware-based approach, several components including EMI
filters and shield plates are added to reduce EMI, which will
increase the cost and delay the product development
schedule. Therefore, the software-based approach, where theEMI spectrum is tuned using a programmable hardware, ispreferred, because it is cheaper and faster than the hardwarebased approach.

II. PROPOSED GATE DRIVING TECHNIQUE USING DIGITALGATE DRIVER IC
In general, the conductive EMI is evaluated by measuring
the frequency spectrum of the input voltage of the continuously
operating power converter. In this paper, however, to simplify
the measurement setup, VCE waveform during turn-off
measured in the double pulse test is used to obtain VCE
spectrum. The details will be explained later.
The measurement setup and the gate waveform
optimization method for DGD are the same as [11] except for
the length of the gate driving vector for DGD, time step of
DGD, and the object function for the optimization. Fig. 1
shows a circuit schematic of the measurement setup for the
double pulse test of IGBT (2MBI100TA-060-50, 600 V, 100A) at 300 V. In order to realize a programmable 63-level
drivability in DGD, 63 parallel transistors are connected to thegate of IGBT and a 6-bit control signal is applied to specify the
number of activated PMOS (NMOS) transistors, nPMOS (nNMOS)[10]. Fig. 2 (a) shows the gate driving vectors and waveforms
in the 6-bit DGD. In this paper, the gate driving vectors are

A programmable gate driver, which controls a gate
driving waveform of power transistors during turn-on / offtransients with gate driving vectors, is a promising candidate
for the programmable hardware for the software-based
approach. In the trouble shooting of EMI, EMI reduction in a
specific frequency band is often required to satisfy the EMI
regulations, for example, reducing EMI in 500 kHz to 1.6
MHz frequency band for AM radio broadcasting in
automotive applications [1-2]. The previously reported
programmable gate drivers [3-9], however, are not suitable

XXX-X-XXXX-XXXX-X/XX/$XX.00 ©20XX IEEE644

defined as (n1, n2, n3, … , n8) , where n1, n2, and n8 are integers
from 0 to 63. Eight 200-ns time steps for turn-off are used,because four 400-ns time steps in [11] were not enough. Fig. 2(b) shows the gate driving vectors and waveforms of theconventional single-step gate drive for comparison.

300V

Control signals:
nNMOS and nPMOS

ILOAD

Fig. 3 shows a method to obtain VCE spectrum from VCE
waveform measured in the double pulse test. First, a VCE riseedge waveform of 2-μs duration during turn-off is extracted
from the double pulse test, and it is flipped horizontally tomake the rise edge waveform. Then, the fall and rise edge
waveforms are merged and repeated m times (e.g. m = 20) to
make a repetitive waveform. Finally, a spectrum is obtained by
FFT of the repetitive waveform. In order to evaluate EMI in
the user-defined frequency band from fSTART to fEND, a spectrum
area (ASPECTRUM) is defined as shown in Fig. 3 and Eqs. (1) to(4). ASPECTRUM is the area shown yellow in Fig. 3 and reducing
ASPECTRUM means that EMI in the target band is reduced.

63 PMOSs

15V

IC
VCE
VGE
63 NMOSs
IGBT module

Digital gate driver IC

ASPECTRUM = Fig. 1. Circuit schematic for double pulse test of IGBT.
n8 63

0

t

t
VOVERSHOOT

IC

n
0

t

VGE

nNMOS

‥‥

VGE

nNMOS

n1n2

VCE

IC

t
VOVERSHOOTVACE dF(1)

 f

F = log10  1[ MHz ] 



(2)

 f

FSTART = log10  START  1[ MHz ] 



(3)

 f

FEND = log10  END (4)
 1[ MHz ] where VACE is the spectrum amplitude of VCE in units ofdBμV and f is the frequency. Object function (fOBJ) to beminimized in the optimization using the simulated annealing
algorithm [10-11] is defined as

VCE
t

t

TSTEP = 200ns
8 time-segments

FEND

FSTART(a)(b)
Fig. 2. Gate driving vectors and waveforms. (a) Proposed 6-bit
digital gate driver. (b) Conventional single-step gate drive forcomparison.

2

 ASPECTRUM   ELOSS 
f OBJ =  + 

A
 SPECTRUM,MAX   ELOSS,MAX 

2(5)

Double pulse test
2 μs

VCE (V)VGE (V)Time

Repeated
m times

4 μs

MergedFliphorizontal

・・・
FFTm cyclesVCE spectral amplitude [dBμV]

Extracted

ASPECTRUM

0fSTART

Frequency [MHz]Fig. 3. Method to obtain VCE spectrum from VCE waveform measured in double pulse test.

645

fEND

ELOSS, MAX

Digital gate
driver IC

1.4

fOBJ = 1.0

1.2
1.2

0.8

1
1.0

ELOSS [mJ]

IGBT module

n=5

0.9

Conventional

0.7
0.6

0.8
0.8

0.5

n=26
(Fig. 7 (a))

0.6 0.4
0.6

Proposed(Fig. 7 (b))

0.3

0.4
0.4

0.2

n=63

0.2
0.2
0.1

0
0

Fig. 4. Photo of measurement setup.

20
20

30
30

40
40

50
50
SPECTRUM, MAX

Fig. 5. Measured ELOSS vs. ASPECTRUM of conventional single-stepgate drive and proposed gate drive optimized for target frequency
bands of 2 MHz to 5 MHz.

Target frequency(2 - 5 MHz)VCE spectral amplitude [dBμV]

Fig. 4 shows the photo of the measurement setup. The
load current is 20 A. The double pulse test measurements
were made at room temperature.
III. MEASURED RESULTS
To demonstrate the benefits of flexibility of the proposed
software-based EMI solution, the optimization of the gate
driving waveforms to solve the trade-off between EMI and
ELOSS at four different frequency bands (2 MHz to 5 MHz, 5
MHz to 7.5 MHz, 7.5 MHz to 10 MHz, and 10 MHz to 20
MHz) are shown. Table I summarizes the measured results at
the four different frequency bands. Figs. 5, 8, 11, and 14
show the measured ELOSS vs. ASPECTRUM of the conventional
single-step gate drive in Fig. 2 (b) with varied n from 5(minimum in this paper) to 63 (maximum) and the proposed
gate drive in Fig. 2 (a) optimized for the target frequency
bands of 2 MHz to 5 MHz, 5 MHz to 7.5 MHz, 7.5 MHz to
10 MHz, and 10 MHz to 20 MHz, respectively. The dotted
concentric curves show the contour of fOBJ defined in Eq. (5).
Figs. 6, 9, 12, and 15 show the measured comparison of VCE

Targetfrequency

10
10

ASPECTRUM [dBμV] A

where the subscript MAX signifies the maximum of thecorresponding quantity. Compared with [11], only thedefinition of fOBJ is changed and the optimization algorithm isthe same. The gate driving vectors (n1, n2, n3, … , n8) areglobally and automatically optimized by repeating the double
pulse test approximately 5000 times using LabVIEW and
MATLAB, which takes approximately 40 minutes.

TABLE I.

00

160
140

−2 dBμV

120

Conv. single-step (n=26)
ELOSS : 0.40 mJ(Fig. 7 (a))

100
Proposed
ELOSS : 0.40 mJ(Fig. 7 (b))

80
60
40
20
0
-20
1

2

3

4 5

10

20

30

Frequency [MHz]Fig. 6. Measured comparison of VCE spectrums of conventional
single-step gate drive and proposed gate drive optimized for target
frequency bands of 2 MHz to 5 MHz under same ELOSS condition.

SUMMARY OF MEASURED RESULTS AT FOUR DIFFERENT FREQUENCY BANDS.

Reduction of
ELOSS vs.
VCE
Max EMI Benefits ofWaveforms ASPECTRUM at
ASPECTRUM spectrum
reduction proposal
same ELOSS

2 - 5 MHz

Fig. 5

Fig. 6

Fig. 7−1.2 %−2 dBμV

Small

5 - 7.5 MHz

Fig. 8Fig. 9Fig. 10−21 %−57 dBμV

Large

7.5 - 10 MHz

Fig. 11

Fig. 12Fig. 13−46 %−105 dBμV

Largest10 - 20 MHz

Fig. 14

Fig. 15

Fig. 16−8.4 %−61 dBμV

Medium646

200 ns/div

VCE:50 V/div

25

IC:5 A/div

200

20

150

15

100

10

VGE:5 V/div

50

IC:5 A/div
Vce (V)

Vce (V)

VCE:50 V/div

30

VGE:5 V/div

5

00

0

0

-50
2.1

2.5

2.7

2.9

3.1

nNMOS

2.3

3.3

3.5

3.7

3.9

Vge (V), Ic(A)

300
250

200 ns/div

35

Vge (V), Ic(A)350

ELOSS : 0.40 mJ

ELOSS : 0.40 mJ 40

400

4.1

4.3

4.5

-5

63

nNMOS

Time(us)

26

45

44
25
1

0

Time

0

8

34
16

Time

200 ns

(a)

(b)

1.4

0.9

1.2
1.2

Target frequency(5 – 7.5 MHz)
n=5

0.8

1
1.0

ELOSS [mJ]fOBJ = 1.0

VCE spectral amplitude [dBμV]

ELOSS, MAX

Fig. 7. Gate driving vectors and measured waveforms under same ELOSS condition. (a) Conventional single-step gate drive. (b) Proposed gate
drive optimized for target frequency bands of 2 MHz to 5 MHz.

0.7
0.6

0.8
0.8

n=12
(Fig. 10 (a))

Conventional

0.5

0.6 0.4
0.6

Proposed(Fig. 10 (b))

0.3

0.4
0.4

-21%

0.2

n=63

0.2
0.2
0.1
00

00

55

10
10

15
15

20
20

160
160

Conv. single-step (n=12)
ELOSS : 0.65 mJ(Fig. 10 (a))

140
140
120
120
100
100

8080

−57 dBμV

6060

Proposed
ELOSS : 0.67 mJ(Fig. 10 (b))

4040
2020
00
-20
-20
10
10

2

3

4 5

1
10
10

20

30

Frequency [MHz]ASPECTRUM [dBμV] A

SPECTRUM, MAX

Fig. 9. Measured comparison of VCE spectrums of conventional
single-step gate drive and proposed gate drive optimized for target
frequency bands of 5 MHz to 7.5 MHz under same ELOSS condition.

Fig. 8. Measured ELOSS vs. ASPECTRUM of conventional single-stepgate drive and proposed gate drive optimized for target frequency
bands of 5 MHz to 7.5 MHz.

spectrums of the conventional single-step gate drive and the
proposed gate drive under the same ELOSS condition
optimized for the target frequency bands of 2 MHz to 5 MHz,
5 MHz to 7.5 MHz, 7.5 MHz to 10 MHz, and 10 MHz to 20
MHz, respectively. Figs. 7, 10, 13, and 16 show the gate
driving vectors and measured waveforms of gate-to-emitter
voltage (VGE), collector current (IC), and VCE in theconventional single-step gate drive and the proposed gate
drive under the same ELOSS condition optimized for the target

frequency bands of 2 MHz to 5 MHz, 5 MHz to 7.5 MHz, 7.5
MHz to 10 MHz, and 10 MHz to 20 MHz, respectively.
Of the four target frequency bands, 5 MHz to 7.5 MHz
frequency band is explained, which is the easiest tounderstand. In Fig. 8, in the conventional single-step gate
drive, when n is increased from 5 to 63, ELOSS is reduced,
while ASPECTRUM is increased, because the rise time of VCE is
reduced. At the same ELOSS, ASPECTRUM of the proposed gate

647

ELOSS : 0.65 mJ

400

200 ns/div

350

ELOSS : 0.67 mJ
40

200 ns/div

VCE:50 V/div 35

300

VCE:50 V/div

30

250

IC:5 A/div

25

IC:5 A/div

200

20

150

15

100

VGE:5 V/div

50

00

10

VGE:5 V/div

5

0

0

2

2.2

2.4

2.6

nNMOS

1.8

2.8

3

3.2

3.4

3.6

3.8

4

63

-5

nNMOS

-50
1.6

Time(us)

12

47
28
0

21

28

20
5

2

5

Time

200 ns

Time
(a)

(b)

1.4

fOBJ = 1.0
0.9

1.2
1.2

ELOSS [mJ]

n=5

0.8

1
1.0

0.7

n=12
(Fig. 13 (a))

Conventional

0.6

0.8
0.8

0.5

0.6
0.6

0.2
0.2
0.2

00

-46%

0.4
0.3

0.4
0.4

0
0

Target frequency(7.5 - 10 MHz)VCE spectral amplitude [dBμV]

ELOSS, MAX

Fig. 10. Gate driving vectors and measured waveforms under same ELOSS condition. (a) Conventional single-step gate drive. (b) Proposed gate
drive optimized for target frequency bands of 5 MHz to 7.5 MHz.

Proposed(Fig. 13 (b))
n=63

0.1

55

10
10

ASPECTRUM [dBμV] A

15
15

160
160
140
140
120
120
100
100

Conv. single-step (n=12)
ELOSS : 0.65 mJ(Fig. 13 (a))

Proposed
ELOSS : 0.64 mJ(Fig. 13 (b))

8080
6060

−105 dBμV

4040
2020
00
-20
-20
10
10

2

3

4 5

101
10

20

30

Frequency [MHz]SPECTRUM, MAX

Fig. 11. Measured ELOSS vs. ASPECTRUM of conventional single-stepgate drive and proposed gate drive optimized for target frequency
bands of 7.5 MHz to 10 MHz.

Fig. 12. Measured comparison of VCE spectrums of conventional
single-step gate drive and proposed gate drive optimized for target
frequency bands of 7.5 MHz to 10 MHz under same ELOSS
condition.

drive is reduced by 21 % compared with the conventional
single-step gate drive with n = 12. In Figs. 9 and 10, theconventional single-step gate drive (n = 12) and the proposed
gate drive under the same ELOSS condition are compared indetail. In Fig. 9, compared with the conventional single-stepgate drive, the proposed gate drive clearly reduces EMI at thetarget frequency band of 5 MHz to 7.5 MHz and the

maximum reduction of VACE is −57 dBμV. In the proposed
gate drive, please note that EMI is certainly reduced at thetarget frequency band of 5 MHz to 7.5 MHz, while EMI may
increase outside the range of the target frequency band. Figs.
10 (a) and (b) show the gate driving vectors and measured
waveforms in the conventional single-step gate drive and the
proposed gate drive, respectively. The gate driving vectors in

648

ELOSS : 0.65 mJ
200 ns/div

ELOSS : 0.64 mJ
200 ns/div

VCE:50 V/div

IC:5 A/div

VCE:50 V/div

IC:5 A/div

VGE:5 V/div

0

0

nNMOS

nNMOS

VGE:5 V/div

12

23

Time

42
14

0

63

61

48

17
0

0

Time

200 ns(a)(b)

fOBJ = 1.0

0.9

1.2
1.2

0.7

Conventional

0.6

0.8
0.8

0.5

n=34
(Fig. 16 (a))

0.6 0.4
0.6

0.3

0.4
0.4

Proposed(Fig. 16 (b))

0.2
0.2
0.2
0.1
0
0

n=5

0.8

1
1.0

ELOSS [mJ]

Target frequency(10 - 20 MHz)

1.4

VCE spectral amplitude [dBμV]

ELOSS, MAX

Fig. 13. Gate driving vectors and measured waveforms under same ELOSS condition. (a) Conventional single-step gate drive. (b) Proposed gate
drive optimized for target frequency bands of 7.5 MHz to 10 MHz.

00

55

10
10

15
15

n=63
20
20

25
25

ASPECTRUM [dBμV] A

160
140
120
100

Conv. single-step (n=34)
ELOSS : 0.37 mJ(Fig. 16 (a))

80

Proposed
ELOSS : 0.37 mJ(Fig. 16 (b))

60
40

−61 dBμV

20
0
-20
1

2

3

4 5

10

20

30

Frequency [MHz]SPECTRUM, MAX

Fig. 15. Measured comparison of VCE spectrums of conventional
single-step gate drive and proposed gate drive optimized for target
frequency bands of 10 MHz to 20 MHz under same ELOSS condition.

Fig. 14. Measured ELOSS vs. ASPECTRUM of conventional single-stepgate drive and proposed gate drive optimized for target frequency
bands of 10 MHz to 20 MHz.

Fig. 10 (b) are automatically obtained using the optimization
algorithm. In the proposed gate drive, the reason for the
reduction of VACE at the target frequency band of 5 MHz to
7.5 MHz in Fig. 9 is estimated to be n5 = 5 (the arrow in Fig.
10 (b)), because dVCE/dt during the overshoot of VCE is
reduced by the transient small gate driving current (n5 = 5).

Table I summarizes the reduction of ASPECTRUM at thesame ELOSS and the maximum EMI (VACE) reduction of the
proposed gate drive compared with the conventional singlestep gate at the four target frequency bands. At the target
frequency band of 7.5 MHz to 10 MHz, the benefit of the
proposed gate drive is the largest. ASPECTRUM is reduced by
46 % and the maximum reduction of VACE is −105 dBμV. At

649

ELOSS : 0.37 mJ

ELOSS : 0.37 mJ
200 ns/div

200 ns/div

VCE:50 V/div

IC:5 A/div

Vce (V)

Vge (V), Ic(A)IC:5 A/div

VCE:50 V/div

VGE:5 V/div

VGE:5 V/div

0
53

nNMOS

nNMOS

0

34

35
18

63

62

53
27

32

39

0

Time

Time

200 ns(b)(a)

Fig. 16. Gate driving vectors and measured waveforms under same ELOSS condition. (a) Conventional single-step gate drive. (b) Proposed gate
drive optimized for target frequency bands of 10 MHz to 20 MHz.

the target frequency band of 5 MHz to 7.5 MHz, the benefitof the proposed gate drive is the second largest.

At the target frequency band of 7.5 MHz to 10 MHz,
compared with the conventional single step gate drive, theproposed digital gate drive reduces ASPECTRUM by 46 % and the
maximum EMI is reduced by −105 dBμV at the same ELOSS.
The proposed gate drive is effective at the target frequency
band between 5 MHz to 10 MHz, because the time step of the
proposed gate drive is 200 ns. In order to reduce the highfrequency EMI beyond 10 MHz, the time step should be
reduced.

In contrast, at the target frequency band of 2 MHz to 5
MHz, the benefit of the proposed gate drive is the smallest.
ASPECTRUM is reduced by 1.2 % and the maximum reduction of
VACE is −2 dBμV. The reason why the proposed gate drive is
not effective at the target frequency band of 2 MHz to 5 MHz
is discussed. As shown in Fig. 6, the gradient of VCE
spectrums at the target frequency band of 2 MHz to 5 MHz is−40 dB / dec., which derives from the repetitive trapezoidal
waveforms [1][4]. To reduce EMI at the target frequency
band of 2 MHz to 5 MHz, the rise time and the fall time of
VCE waveform should be increased. The increase of the rise /fall time of VCE waveform, however, is not accepted in the
optimization as shown in Eq. (5), because it increases ELOSS.
Therefore, the benefit of the proposed gate drive is thesmallest at the target frequency band of 2 MHz to 5 MHz.
The benefit of the proposed gate drive is also small at thetarget frequency band of 10 MHz to 20 MHz, because thetime step of the proposed gate drive is 200 ns corresponding
to 5 MHz and the target frequency band is beyond 10 MHz.

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the time step of the proposed gate drive is 200 ns. In order toreduce the high frequency EMI beyond 10 MHz, the time stepshould be reduced.

[4]

[5]

IV. CONCLUSIONSTo reduce both conductive EMI in the specific frequency
band and ELOSS, the new gate driving technique using DGD
based on the frequency-domain analysis of VCE is proposed.

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