Single P-channel MOSFET
ELM4PK3101FRA-S

http://www.elm-tech.com■General description■Features

ELM4PK3101FPA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and lowgate threshold voltage.

• Vds=-30V• Id=-4A• Rds(on)=52mΩ (Vgs=-10V)• Rds(on)=90mΩ (Vgs=-4.5V)■Maximum absolute ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage
Continuous drain current

Ta=25°C
Ta=70°C

Pulsed drain current
Power dissipation

Ta=25°C
Ta=70°C

Storage temperature range
Operating junction temperature rangeRating
Steady state

Unit

NoteVds
Vgs-30±20VV

Id-4-3A

Idm-20A

2Pd

1.32
0.84

W

3Tstg
Tj-55 to +150
-55 to +150°C°C■Thermal characteristics
Parameter
Thermal resistance junction-ambient (Steady state)
Thermal Resistance Junction-Case

SymbolRθja
Rθjc■Pin configuration

Typ.
-Max.
95
30

Unit°C/W°C/W

Note
11

■Circuit

SOT-89(TOP VIEW)
Pin No.

Pin name

12
3

GATE
DRAIN
SOURCE

Rev.1.0
1/4

Single P-channel MOSFET
ELM4PK3101FRA-S

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Vgs=0V, Id=-250μA

-30

--V

Zero gate voltage drain current

Idss---1-5μA-1.2-±100-2.5nAV

Vgs=-10V, Id=-4A--52

Vgs=-4.5V, Id=-2A
Vds=-5V, Id=-4A

-

1190-

Is=-1A, Vgs=0V---1.2-4.5-23

VAA

Vds=-24V, Vgs=0V
Vds=-24V, Vgs=0V, Tj=55°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA

Static drain-source on-resistanceRds(on)mΩForward transconductance

Gfs

Diode forward voltage
Max. body-diode continuous current
Pulsed source current
DYNAMIC PARAMETERS

Vsd
IsIsm

Input capacitance
Output capacitance

Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz

-583
100-

pF
pF

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge (-4.5)

Crss-80-pF-

6.4-nC

Gate-source charge

Qgs-2.3-nC

Gate-drain charge
Turn-on delay time

Qgd
td(on)

-

1.9
2.8-

nCns

Turn-on rise timetrVgs=-10V, Vds=-15V
td(off) Id=-4A, Rgen=3.3Ω

-

8.4
39.0

-

nsnstf
trr
Qrr

-

6.0
7.8
2.5

-

nsnS
nC

Turn-off delay timeTurn-off fall time
Reverse recovery time
Reverse recovery charge

Qg

Vgs=Vds=0V, Force current

Vgs=-4.5V, Vds=-15V
Id=-4A

If=-4A , dI/dt=100A/µs

2S21, 42, 4NOTE :1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The power dissipation is limited by 150°C junction temperature.
4. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.0
2/4

FKK3101

Single P-channel MOSFET
FETek Technology Corp.

ELM4PK3101FRA-S
P-Ch 30V Fast Switching MOSFETs

http://www.elm-tech.com■Typical electrical and thermal characteristics
Typical Characteristics

100RDSON (mΩ)

ID=-4A80

6040246-VGS (V)810Fig.2 On-Resistance vs. Gate-Source

Fig.1 Typical Output Characteristics
10-IS Source Current(A)

8TJ=150�

TJ=25�

64

200.2

0.4

0.6

0.8

-VSD , Source-to-Drain Voltage (V)1Fig.3 Forward Characteristics of Reverse

Fig.4 Gate-Charge Characteristics
2.0Normalized On Resistance

Normalized VGS(th)

1.5

1.5

1

1.0

0.5

0.5

0-50

050

100

TJ ,Junction Temperature (�)-50150050100

TJ , Junction Temperature (�)150Fig.6 Normalized RDSON vs. TJ

Fig.5 Normalized VGS(th) vs. TJ
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3Rev.1.0
3/4

Single P-channel MOSFETFKK3101

ELM4PK3101FRA-S

http://www.elm-tech.com
P-Ch 30V Fast Switching
MOSFETs

FETek Technology Corp.

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (RθJA)

1

DUTY=0.5
0.2
0.1

0.1
0.05
0.01

PDM

0.01

T ON
T

D = TON/T

SINGLE

TJpeak = TC+PDMXRθJC0.001
0.0001

0.001

0.01

0.1

1101001000t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform

Fig.11 Gate Charge Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

4/4

4Rev.1.0