Complementary MOSFET
ELM51016CA-S■General Description■Features

ELM51016CA-S uses advanced trenchtechnology to provide excellent Rds(on)and low gate charge.

N-channel

P-channel• Vds=20V• Id=0.6A• Vds=-20V• Id=-0.4A• Rds(on)=360mΩ(Vgs=4.5V)• Rds(on)=420mΩ(Vgs=2.5V)• Rds(on)=620mΩ(Vgs=-4.5V)• Rds(on)=860mΩ(Vgs=-2.5V)• Rds(on)=560mΩ(Vgs=1.8V)• Rds(on)=1450mΩ(Vgs=-1.8V)■Maximum Absolute Ratings
ParameterSymbol

Drain-source voltageGate-source voltage

Vds
Vgs
Ta=25°C
Ta=70°C

Continuous drain current(Tj=150°C)

Id

Pulsed drain current

Idm
Tc=25°C

Power dissipationPd

Tc=70°C

Operating junction temperature
Storage temperature range

TjTstg■Pin configuration
SOT-563(TOP VIEW)

http://www.elm-tech.com

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit
20±120.6-20±12-0.4

0.4
1.0
0.27

-0.2
-1.0
0.27

0.16
-55 to 150-55 to 150

0.16-55 to 150-55 to 150

VVAAW°C°C■Circuit
Pin No.
1Pin nameSOURCE12GATE134DRAIN2SOURCE256GATE2DRAIN1• N-ch

• P-ch
D1G1

D2G2S1S2Rev.1.01/ 9

Complementary MOSFET
ELM51016CA-S

http://www.elm-tech.com■Electrical Characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=20V, Vgs=0V

20V

Ta=85°C

15μA

±100
1.0nA
V

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=250μA

0.4

On state drain current

Id(on) Vgs=4.5V, Vds≥5V0.7

Static drain-source on-resistanceVgs=4.5V, Id=0.6A
Rds(on) Vgs=2.5V, Id=0.5A

240
300

360
420

Vgs=1.8V, Id=0.4A
Vds=10V, Id=0.4A
Is=0.15A, Vgs=0V

420
10.8560

Forward transconductance
Diode forward voltage

Gfs
Vsd

Max.body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance

IsCissmΩ

1.2SV0.3

A70pF

208pFpFOutput capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CossCrss

Gate-source charge
Gate-drain charge

Qgs
Qgd

Turn-on delay timeTurn-on rise timeTurn-off delay timetd(on)
tr
Vgs=4.5V, Vds=10V, Id≡0.5A

18202628nsnstd(off) RL=20Ω, Rgen=1Ω
tf

70
25110
40

nsns

Turn-off fall time

Qg

Vgs=0V, Vds=10V, f=1MHzA

Vgs=4.5V, Vds=10V,
Id≡0.6A

1.06

1.38

0.18
0.32

nCnCnC

Rev.1.02/ 9AFC1016

Alfa-MOS

20V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM51016CA-S
Typical Characteristics ( N-Channel )■Typical Electrical and Thermal Characteristics (N-ch)©Alfa-MOS Technology Corp.
Rev.A Mar. 2011

http://www.elm-tech.com

www.alfa-mos.com
Page 4

Rev.1.0
3/ 9

AFC1016

Alfa-MOS

20V N & P Pair
Enhancement Mode MOSFET
Complementary MOSFET

Technology

Typical Characteristics ( N-Channel )ELM51016CA-S©Alfa-MOS Technology Corp.
Rev.A Mar. 2011

http://www.elm-tech.com

www.alfa-mos.com
Page 5

Rev.1.0
4/ 9

AFC1016

Alfa-MOS

20V N & P Pair
Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM51016CA-S■Test
circuit and waveform(N-ch) )TypicalCharacteristics( N-Channel©Alfa-MOS Technology Corp.
Rev.A Mar. 2011

http://www.elm-tech.com

www.alfa-mos.com
Page 6

Rev.1.05/ 9

Complementary MOSFET
ELM51016CA-S

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-20V, Vgs=0V-20

VTa=85°C-1-5μA±100-1.0nAV

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA-0.4

On state drain current

Id(on) Vgs=-4.5V, Vds≥-5V-0.7

Static drain-source on-resistanceVgs=-4.5V, Id=-0.4A
Rds(on) Vgs=-2.5V, Id=-0.3A

500
700

620
860

Vgs=-1.8V, Id=-0.2A
Vds=-10V, Id=-0.4A
Is=-0.15A, Vgs=0V

1000
1-0.651450

Forward transconductance
Diode forward voltage

Gfs
Vsd

Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance

IsCiss70

Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERSTotal gate charge

CossCrss

Gate-source charge
Gate-drain charge

Qgs
Qgd

Turn-on delay timetd(on)
Vgs=-4.5V, Vds=-10V
tr
Id≡-0.2A, RL=30Ω
td(off)Rgen=10Ωtf

Turn-on rise timeTurn-off delay timeTurn-off fall time

Qg

A

Vgs=0V, Vds=-10V, f=1MHz

Vgs=-4.5V, Vds=-10V
Id≡-0.25A-1.20

SV-0.3

A100pF20101.0mΩ

pFpF
1.30.10.3nCnCnC

10101515nsns

40306050nsns

Rev.1.0
6/ 9AFC1016

Alfa-MOS

20V N & P Pair
Technology
Enhancement Mode MOSFET
Complementary MOSFET
ELM51016CA-S

Typical Characteristics ( P-Channel )■Typical Electrical and Thermal Characteristics (P-ch)©Alfa-MOS Technology Corp.
Rev.A Mar. 2011

http://www.elm-tech.com

www.alfa-mos.com
Page 7

Rev.1.0
7/ 9

20V N & P Pair
Enhancement Mode MOSFET

Technology

Complementary MOSFET
Typical Characteristics ( P-Channel ) ELM51016CA-S©Alfa-MOS Technology Corp.
Rev.A Mar. 2011

http://www.elm-tech.com

www.alfa-mos.com
Page 8
Rev.1.08/ 9

AFC1016

Alfa-MOS

20V N & P Pair

Technology
Complementary MOSFET
Enhancement Mode MOSFET
ELM51016CA-S
TypicalCharacteristics( P-Channel■Test circuitand waveform(P-ch) )©Alfa-MOS Technology Corp.
Rev.A Mar. 2011

http://www.elm-tech.com

www.alfa-mos.com
Page 9Rev.1.09/ 9