Single P-channel MOSFET
ELM6PB8P6FCA-S■General description■Features

ELM6PB8P6FCA-S uses advanced trench technology toprovide excellent Rds(on), low gate charge and low gate
threshold voltage.

• Vds=-60V• Id=-3.0A (Vgs=-10V)• Rds(on) = 83mΩ (Vgs=-10V)• Rds(on) = 120mΩ (Vgs=-4.5V)■Maximum absolute ratings
Parameter

SymbolVds
Vgs

Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous drain current

Tc=25°C
Tc=100°C
Ta=25°C
Ta=70°C

Pulsed drain currentContinuous body diode forward current
Avalanche current (L=0.1mH)
Avalanche energy (L=0.5mH)
Power dissipation
Power dissipation

IdIdm
IsIas
Eas

Tc=25°C
Tc=100°C
Ta=25°C
Ta=70°C

Junction and storage temperature range

http://www.elm-tech.com

PdTj, Tstg

Ta=25°C. Unless otherwise noted.
Limit
Unit
Note-60
V±20V-7.3
A
1-6.3-3.0
A
2-2.4-30
A
3-4.8
A
1-12A
12mJ
21.0W
18.4
2.7W
21.7-55 to +150°C■Thermal characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient

SymbolRθjcRθjaTyp.
-Max.
647Unit°C/WNote
1

NOTE : 1. The power dissipation Pd is based on Tj(max)=150°C, using junction-to-case thermal resistance, and is more useful insetting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of Rθja is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment
with Ta=25°C. The power dissipation Pd is based on Rθja and the maximum allowed junction temperature of 150°C.
The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature Tj(max)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial Tj=25°C.

■Pin configuration■Circuit

SOT-89(TOP VIEW)

DPin No.

Pin name

1

GATE

2
3DRAIN
SOURCE

GS

Rev.1.2
1/7

Single P-channel MOSFET
ELM6PB8P6FCA-S

http://www.elm-tech.com■Electrical characteristics

Ta=25°C. Unless otherwise noted.
ParameterSymbolCondition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

-60

--V

Zero gate voltage drain current

Idss

Vds=-48V, Vgs=0V---1μA

Gate-body leakage current

Igss

Vds=0V, Vgs=±20V--±100nA

Gate threshold voltage

Vgs(th) Vds=Vgs, Id=-250μA-1.0--2.5

V

Static drain-source on-resistanceRds(on)Vgs=-10V, Id=-3A-83

110

Vgs=-4.5V, Id=-2A-120

170

STATIC PARAMETERSmΩ

Forward transconductance

Gfs

Vds=-10V, Id=-3A-6.4-

S

Diode forward voltage *1

Vsd

Is=-3A, Vgs=0V

-

-0.84

-1.20

V-

500-

pF-

51-

pF-

37-

pF-

6.6-

Ω-

11.0-

nC-

2.0-

nC-

3.2-

nC-

6.4-

ns-

17.0-

ns-

25.0-

ns-

7.2-

ns-

13-

ns-

8-

nC

DYNAMIC PARAMETERS
Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Gate resistanceRg

SWITCHING PARAMETERS
Total gate charge *1, 2Qg

Gate-source charge *1, 2
Gate-drain charge *1, 2QgsQgd

Vgs=0V, Vds=-30V, f=1MHzf=1MHz

Vgs=-10V, Vds=-30V
Id=-3A

Turn-on delay time *1, 2
Turn-on rise time *1, 2td(on)Turn-off delay time *1, 2
Turn-off fall time *1, 2td(off) Id=-3A, Rgen=3Ω

tr

Vgs=-10V, Vds=-30Vtf

Body diode reverse recovery timetrr

Body diode reverse recovery charge

Qrr

If=-3A, dIf/dt=100A/μs* 1. Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%.
2. Independent of operating temperature.

Rev.1.2
2/7

Single P-channel MOSFETCYStek
Electronics Corp.
ELM6PB8P6FCA-S

Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date : 2022.02.17
http://www.elm-tech.com
Page No. : 4/9■Typical electrical and thermal characteristics
Typical Characteristics
Typical Output Characteristics

Breakdown Voltage vs Ambient Temperature

40-BVDSS, Normalized Drain-Source Breakdown
Voltage

1.2-ID, Drain Current(A)-10V,-9V,-8V,-7V
30-6V-5V

20-4V

10-3.5V
VGS=-3V00246810

1.1

1ID=-250μA
VGS=0V

0.9

0.8-75-50-VDS, Drain-Source Voltage(V)255075100 125 150 175

Body Diode Current vs Source-Drain Voltage

160

1.2-VSD, Source-Drain Voltage(V)RDS(ON), Static Drain-Source On-StateResistance(mΩ)

0TJ, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

140
VGS=-4.5V
120

10080

VGS=-10V

1.0

TJ=25°C

0.8

TJ=150°C
0.6

0.4

0.2

6002468010246810-ID, Drain Current(A)-IS, Body Diode Current(A)Static Drain-Source On-State Resistance vs Gate-SourceVoltage

Drain-Source On-State Resistance vs Junction Temperature

RDS(ON), Normalized Static Drain-Source
On-State Resistance240

RDS(ON), Static Drain-Source On-StateResistance(mΩ)-25200160

ID=-3A

12080

2.5
VGS=-10V, ID=-3A
RDS(ON)@TJ=25°C : 83mΩ typ.

2.0

1.5

1.0

0.5

0.0

4002468-75

10-50-250255075

100 125 150 175

TJ, Junction Temperature(°C)-VGS, Gate-Source Voltage(V)

MTB080P06M3

CYStek Product Specification

Rev.1.2
3/7

SingleP-channel
MOSFET
CYStekElectronics
Corp.

Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date : 2022.02.17
Page No. : 5/9

ELM6PB8P6FCA-S

http://www.elm-tech.com

Typical Characteristics (Cont.)
Capacitance vs Drain-to-Source Voltage

Threshold Voltage vs Junction Temperature

1000-VGS(th), Normalized Threshold Voltage

1.4

Capacitance(pF)

Ciss

100

Coss

Crss

1.0

ID=-1mA

0.80.6

ID=-250μA

0.4100102030-75-50-250255075

100 125 150 175-VDS, Drain-Source Voltage(V)TJ, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

Gate Charge Characteristics

1010-VGS, Gate-Source Voltage(V)GFS, Forward Transfer Admittance(S)

1.2

10.1
VDS=-10V
TA=25°C
Pulsed864
VDS=-30V
ID=-3A

200.010.001

0.010.1

10102-ID, Drain Current(A)4681012Qg, Total Gate Charge(nC)Maximum Safe Operating Area

Maximum Drain Current vs Junction Temperature-ID, Drain Current(A)10RDS(ON)
Limited

100μs

11ms
10ms
100ms
1s
10s

0.1
TA=25°C, TJ=150°C
VGS=-10V,RθJA=47°C/W
Single Pulse

DC-ID, Maximum Drain Current(A)

40.01
0.1

11032

VGS=-10V
RθJA=47°C/W

1010025-VDS, Drain-Source Voltage(V)5075100125150

175

TJ, Junction Temperature(°C)

MTB080P06M3

CYStek Product Specification

Rev.1.2
4/7

SingleP-channel
MOSFET
CYStekElectronics
Corp.

Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date : 2022.02.17
Page No. : 6/9

ELM6PB8P6FCA-S

http://www.elm-tech.com

Typical Characteristics (Cont.)
Maximum Drain Current vs Case Temperature

Single Pulse Power Rating, Junction to Ambient
12300

ID, Maximum Drain Current(A)TJ(MAX)=150°C
TA=25°C
RθJA=47°C/W

250

Power (W)2001501005010Silicon limit

8Package limit

64

VGS=-10V, RθJC=6°C/W

2000.0001

0.001

0.01

0.1

11025

10050Pulse Width(s)75100125

150175

TC, Case Temperature(°C)
Transient Thermal Response Curvesr(t), Normalized Effective Transient Thermal Resistance

1
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)4.RθJA=47°C/W

0.1
0.1

0.05
0.02

0.01
0.01, Single Pulse

0.001
1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03t1, Square Wave Pulse Duration(s)Recommended Soldering Footprint■Recmmended soldering footpeint

MTB080P06M3

CYStek Product Specification

unit: mm
Rev.1.2
5/7

Single P-channel MOSFET
ELM6PB8P6FCA-S

http://www.elm-tech.com■SOT-89 dimension

A

213
H

C

D

B

FE

I

G

DIM
FInchesMin.
Min.
0.1732 Max.
0.05910.1551 TYP

BCC
D

0.1551

4.25

G0.1181H

DEE
F

0.0906 0.32
0.1024

2.30

REF
2.60
2.60
0.52

TYP REF3.00 TYP
0.06100.05511.40
0.0906 0.06300.1024 1.60

I0.0138
0.0126 0.0173

0.02051.50 TYP
0.32

0.52

0.16731.55 REF
3.94
0.06102.30REF
1.55

0.0126

Inches*: TypicalMillimeters
InchesMillimeters
Min.
Max.
Min. 4.40Max.
Min.
Max.
4.60
0.1732 3.94
0.1811
4.40
4.60
4.25

Symbols
DIM
A
A
B

Millimeters
Max.
Min.0.1811Max.
1.50
0.1673TYP

0.35
0.0205 0.44

0.0591 TYP
0.1181 TYP

Notes:
G 1.Controlling dimension: millimeters.
3.00 TYP

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

HMaterial:
I

1.40
0.35

1.60
0.44

 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

0.05510.01380.06300.0173

Rev.1.2
6/7

Single P-channel MOSFET
ELM6PB8P6FCA-S■SOT-89 Reel & carrier tape dimension (Unit: mm)

http://www.elm-tech.com• ReelReel Dimension

Tape Dimension• Carrier
Carrier tape

Rev.1.2
7/7