Single P-channel MOSFET
ELM4P2607FAA-S

http://www.elm-tech.com■General description■Features

ELM4P2607FAA-S uses advanced trench technology toprovide excellent Rds(on), low gate charge and low gate
threshold voltage.

• Vds=-20V• Id=-6.9A (Vgs=-4.5V)• Rds(on) = 30mΩ (Vgs=-4.5V)• Rds(on) = 38mΩ (Vgs=-2.5V)• Rds(on) = 55mΩ (Vgs=-1.8V)■Maximum absolute ratings
Parameter

Symbol

Limit

Unit

Drain-source voltage

Vds-20V

Gate-source voltage

Vgs±12VId-6.9-5.4A

1Idm
Pd-20
1.0AW

23Tj, Tstg

-55 to +150°C

Ta=25°C
Ta=70°C

Continuous drain current (Vgs=-4.5V)
Pulsed drain current
Power dissipation

Ta=25°C

Junction and storage temperature range

Note■Thermal characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

Symbolt ≤ 10s■Pin configuration

RθjaTyp.
-Max.
50
100UnitNote°C/W

1■Circuit

TSOP-6(TOP VIEW)
Pin No.
12

Pin name
DRAIN
DRAIN

345GATESOURCEDRAIN

6DRAIN

Rev.1.0
1/4Single P-channel MOSFET
ELM4P2607FAA-S

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Vgs=0V, Id=-250μA-20--V

Zero gate voltage drain current

Idss---1-5μA

Igss Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=-250μA

-0.3

-0.5

±100-1.0nAV

Vgs=-4.5V, Id=-4.0A-2530

Rds(on) Vgs=-2.5V, Id=-2.0A
Vgs=-1.8V, Id=-1.5A-

32423855mΩ

2-21--1-6.9SVA

21, 4---18.8

A2, 4Ciss-2280-

pF

Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge (-4.5V)

Coss Vgs=0V, Vds=-15V, f=1MHz
Crss-

220
187-

pF
pF

Qg-

27.3-

nC

Gate-source charge
Gate-drain charge

Qgs
Qgd-

3.6
6.5

-

nC
nC

Turn-on delay timetd(on)trVgs=-4.5V, Vds=-10V-

9.2
59.0-

nsnstd(off) Id=-4A, Rgen=3.3Ω
tftrr
If=-4A , dI/dt=100A/µs
Qrr

-99.0
71.052-nsnsnS-28-nC

Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current

Gfs
Vsd
IsPulsed source current
DYNAMIC PARAMETERS
Input capacitanceIsm

Turn-on rise timeTurn-off delay timeTurn-off fall time
Reverse recovery time
Reverse recovery charge

Vds=-16V, Vgs=0V
Vds=-16V, Vgs=0V, Tj=55°C

Vds=-5V, Id=-4A
Is=-1A, Vgs=0VVgs=Vds=0V, Force Current

Vgs=-4.5V, Vds=-15V
Id=-4ANOTE :
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The power dissipation is limited by 150°C junction temperature.
4. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.02/4

Single P-channel MOSFETFKQ2607

ELM4P2607FAA-S
P-Ch 20V Fast Switching MOSFETsFETek Technology Corp.

http://www.elm-tech.com■Typical electrical and thermal characteristics
Typical Characteristics

5020

ID=-4A

VGS=-5V
VGS=-4.5V
VGS=-3V

40

RDSO N(mΩ)-ID Drain Current (A)1612

VGS=-2.5V
830

VGS=-1.8V
420000.25

0.50.75

1-VDS , Drain-to-Source Voltage (V)

11.25

Fig.1 Typical Output Characteristics

23-VGS (V)45Fig.2 On-Resistance vs. Gate-Source-IS Source Current(A)86

TJ=150℃

4TJ=25℃

2000.40.8-VSD , Source-to-Drain Voltage (V)1.2

Fig.3 Forward Characteristics Of Reverse

Fig.4 Gate-Charge Characteristics
1.8Normalized On Resistance

1.81.4

Normalized VGS(th)1.4

1.010.6

0.6

0.2

0.2-50050100

TJ ,Junction Temperature (℃ )-50150Fig.5 Normalized VGS(th) vs. TJ

050

100

TJ , Junction Temperature (℃)

150

Fig.6 Normalized RDSON vs. TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3

Rev.1.03/4

Single P-channel MOSFET
FETek Technology Corp.

FKQ2607

ELM4P2607FAA-S

P-Ch 20V Fast Switching
MOSFETs
http://www.elm-tech.com

10000

Capacitance (pF)

Ciss1000

CossCrss

100

F=1.0MHz

101591317-VDS , Drain to Source Voltage (V)21

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (R θJA)

1

DUTY=0.5
0.2
0.1

0.1
0.05
0.02

0.01

0.010.001

SINGLE PULSE

PDM

TON
T

D = TON/T
TJpeak = TA + PDM x RθJA0.0001
0.0001

0.001

0.01

10.1

10

100

1000t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform

Fig.11 Gate Charge Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

4/4

4Rev.1.0