Current Status of NewSUBARUNewSUBARU Storage Ring
Y. Shoji
Storage Ring Parameters
The machine parameters of the 1.5 GeV storage
ring are listed in Table I. Although the machinecondition remains the same, some of the values arerevised according to the new model calculation.
Table I Main parameters of the NewSUBARU
storage ring in FY2011.
Circumference
118.73 m
Bending lattice typemodified DBA
Number of bending cells 6
Straight sections
4m X 4, 15m X 2
Bending radius
3.22 mInjection energy
1.0 GeV
Maximum energy
1.5 GeV
RF frequency
499.955 MHz
Betatron tune
6.29 (H), 2.23 (V)Momentum compaction factor
0.0014
Electron energy
1.0 GeV 1.5 GeV
RF voltage
100 kV 260 kV
Natural energy spread
0.047% 0.072 %Natural emittance
50 nm 112 nm
Maximum beam current 500 mA
Operation Status
The ring has two user-time operation modes, 1.0
GeV top-up operation mode and 1.5 GeV operation
mode. The basic operation time is 9:00 - 21:00 of
weekdays. Monday is used for machine R&D,
Tuesday is for 1.5 GeV user time, Wednesday andThursday are for 1.0 GeV top-up user time, Friday isfor 1.0 GeV or 1.5 GeV user time. Night period orweekend is used for machine study and user timewith the special mode, single bunch operation andLaser-Compton Gamma ray, if necessary.
beam down time by machine troubles
27 hrs (1%)
machine tuning
239 hrs (10%)

machine study &special user time
545 hrs (20%)

normal user time
1191 hrs(44%)
beamline
commissioning
659 hrs (25%)

Figure 1: Machine time in FY2012.

The total machine time in FY2011 was 2661 hrs,
115% of that of FY2011, including the beam downtime. Fig. 1 shows the breakdown. The beam downtime includes not only the down by a failure, butalso off-beam periods by a beam abort or others dueto the beam instability. The category 'beam line
commissioning' had been included in the user time
until FY2011. The total of the normal user time andthe beam line commissioning in this FY, 1850 hrs,
was about 121% of that in FY2011. Time formachine study and special users was 128% of that in
FY2011. The down time due to the machine trouble
was 1.0%, the same level with that in FY 2011.
Machine Troubles
The machine troubles in FY2012 are listed inTable II. The rate of hardware troubles wasincreasing. We had troubles in two different timing
modules. The synthesizer, which is used as a
500MHz master signal generator, had a trouble in
AC-DC units and the signal became noisy. This was
not counted in down time because we could continueuser operation. We had troubles in 5 magnet power
supplies.
Machine Study and Special User Time
Table III shows the list of machine studies in
FY 2012. One special theme, a research related toa production of Laser-Compton backscattering γray and its use, took more than 50% of themachine study time. Most of them took place
after the completion of the new γ-ray hatch at
BL1 in November 2012.
Most of the study reports are open to the public
on the home page of NewSUBARU ( http://www.
lasti. u-hyogo. ac. jp/ beam_physics/ NewSUBARU).
Accelerator Improvements
The top-up operation current has been raised
from 250 mA to 300 mA since October 2012. Fig.2
shows typical operation in these 5 years. This
improvement was achieved by longer lifetime as aresult of an additional installation and optimizationof sextupole magnet families. The harmonic
sextupole family named 'S1' was separated to 'S1','S3OK', and 'S3LU' and they were connected to the
independent power supplies.
New vertical kicker magnet system was installed
at on of the long straight sections. Its pulse shape
was 0.5 ns half sine, a little bit longer than therevolution period. The main purpose of theinstallation was the accelerator physics research togenerate narrow band coherent THz radiation.
However it is useful also for various researches andmachine parameter measurements.

stored beam current (mA)

350
300
250
200

Oct. 2012; 300mA
Nov. 2011; 250mA
Oct. 2009; 220mA
Sep. 2007; 200mA

150
100
50
0

1GeV top-up
operation
9:00 11:00 13:00 15:00 17:00

time

Figure 2: Improvement of top-up operation current
in these 5 years.

Table IIGroup
Operation
Operation
RF & Timing
MagnetBeam line
Utility
Table III

Figure 3: Newly installed vertical kicker system.
.

Machine troubles in FY2012.

Failure/trouble
beam down time (hr)Miss operation (human error)
0.9
Beam loss by a beam instabilities
3.6
Schedule delay by SPring-8 trouble
2.3
Timing module
11.3
Synthesizer (noisy signal)
0.0
Power supply
3.7
Cooling water leak at BL1b5.2Electric power down by a thunder
0.4

List of machine studies in FY2012. The unit of study time is counted by shifts (typically 12 hrs).

R＆D theme and special user mode
Laser-Compton backscattering γ-rays
Parameter tuning for various energy operations
Commissioning of visible light profile monitor port SR5
Skew quadrupole coupling correction
Coherent synchrotron oscillation feed-back
Betatron amplitude dependent orbit shift
Coherent synchrotron radiation by chromaticity modulation
Linear lattice model confirmation
Commissioning of the multi-element corrector
Identification of RF noise source (synthesizer trouble)

responsible person
S. Miyamoto
S. Miyamoto
Y. Shoji
Y. Shoji
Y. Shoji
Y. Shoji
Y. Shoji
Y. Shoji
Y. Shoji
Y. Shojistudy shift
33
1
5
6
1
1
9
1
6
2

Beamlines
Takeo Watanabe and Hiroo Kinoshita
Center for EUVL, LASTI, University of Hyogo
Total nine beamlines are operating in the
NewSUBARU synchrotron facility. Four beamlines of
BL01, BL03, BL06 and BL11 were constructed until 1999.
Three beamlines of BL07, BL09 and BL10 were started theoperation from 2000.
BL03B beamline branched from the BL03 beamline
propose for the usage of the EUVL (extreme ultraviolet
lithography) microscope for the EUVL finished mask
inspection.
BL09B beamline branched from BL09 beamline for theusage of the usage of the EUV interference lithography toevaluate. And BL09C beamline branched from BL09B

beamline for the usage of the thickness measurement of the
carbon contamination originated to the resist outgassing
during the EUV exposure.
BL02 beamline was constructed for the usage of LIGA
in 2003.
BL05 beamline was constracted in response to ademand in the industrial world, that is enhancement of theanalysis ability in the soft X-ray region with thedevelopment of nanotechnology.
The arrangement of the beamlines in the NewSUBARU
synchrotron radiation facility is shown in Fig.1.

Fig. 1 Beamline arrangement in NewSUBARU.
I. BL01
BL01 is a beamline for research and developing newlight sources. This beamline is one of two longstraight section on NewSUBARU. Optical klystron
was installed at this straight section. Upstream side ofthis beamline (BL01B) is intended to be used forvisible and infrared light generated from FEL or SR.
Downstream side of this beamline (BL01A) is used
for laser Compton scattering gamma-rays source.
Gamma-ra y bea mline hutch j ust o utsid e o f thestorage ring tunnel was constructed in 2004 for
gamma-ray irradiation experiments. Specificationsof this gamma-ray source are listed in Table 1.

Table 1. Specification of BL01 gamma beam
CO2 laser
Gamma energy : 1.7 - 4 MeVȝP*DPPDIOX[ [ȖV
5W
[ȖV -1.7 MeV)ZLWKPPĳFROOLPDWRU
Nd laser
Gamma energy : 17 - 40 MeVȝP*DPPDIOX[ [ȖVȝP[ȖV -17 MeV)
5W
ZLWKPPĳFROOLPDWRU*Electron beam energy : 1-1.5 GeV*Electron beam current : 250 mA
gamma-ray beam divergence : 0.5 mrad
II. BL02
The LIGA (abbreviated name of Lithogaphic,
Galvanoformung and Abformung) process which consistsfrom deep x-ray lithography, electroforming, and molding
process is one of the promising candidates for such 3D
micofabrication. More than hundreds aspect ratio for
microstructure can be attained by the usa of the higher
energy x-rays (4-15 keV) from synchrotron radiation (SR)with deeper penetration depth to the photosensitive resist.
In this system we have succeeded to enlarged the exposurearea up to A4 size and the fabrication dimension from
submicron to millimeter by varying the energy of the x-ray
source in accordance with the size of desired microparts.
Micostructure with high aspect ratio over several hundreds
will bi achieved using the x-rays over 10 keV since highenergy x-ray has deep penetration depth to thephoto-sensitive resist materials. Whereas, in the case oflithography for low energy x-rays from 1 keV to 2 keV,submicron structures with high aspect ratio will beachieved using the x-rays mask with precise line-width andthinner absorber, since low energy x-rays has low
penetration depth. Based on this principle, the beamilne for
x-ray exposure have constructed with continuous
selectivity of x-rays frpm 100 eV to 15 keV by using the

x-ray mirrors (plane and cylindrical mirror) and Be film
filters. The horizontal angle of the outgoing SR could beobtained up to 12.5 mrad, which corresponds to thehorizontal size of 220 mm (A4 horizontal size) at the
exposure position. The second characteristic performanceof the beamline is the high efficiency differential pumping
system. This was necessary for maintain the vacuum
difference between the storage ring (<10-9 Pa) and theend-station (<10-9 Pa) at which gasses for substrate coolingwill be introduced in the exposure apparatus.
The flexibility for the shapes and functions of
microstructure will be enlarged by achieving 3D
microfabrication process using multi step exposure atvarious configuration between x-ray mask and substrates.
The relative positions between x-ray mask and substrates,
tilt and rotation angle to the SR incident direction can be
moved simultaneously during SR exposure using 5 axis
stages. The movement of each axis is controlled by the PC
in terms of the scanning speeds, scanning length, andrepetition number. In order to decrease the heat load ofsample substrate suffered during SR irradiation helium
introduction and substrate cooling mechanism were alse
equipped. Specification of spectrometer is listed in Table 2.

Table 2. Specification of the LIGA exposure system
OpticsPlane and cylindrical mirror, Be filters
Exposure energy
100 - 2 keV, and 4 – 15 keV
Exposure method
Proximity and multi step exposure
Wafer size
A4 or 8 inch
Exposure area
230 mm(H) ×300 mm(V)
Exposure environment< 1 atm (He-gas)

III. BL03
BL03 is a beamline for the developing the next
generation lithographic technology so called extreme
ultraviolet lithography (EUVL). The exposure tool isinstalled at the end station. Using this exposure tool, theresearch and development of the next generation
lithography such as the less than 70 nm node is going on
process. The exposure wavelength is 13.5 nm.
The semiconductor industry plays a very important rolein the information technology (IT). In 2006, 256 Gbit
DRAM with a gate length of 70 nm will be demanded in
the IT industry. The extreme ultraviolet lithography(EUVL) is a promise technology for fabricating a finepattern less than 70 nm. To meet this schedule, thistechnology has to be developed in the pilot line until 2004.
As for the practical use, it is very important that both toachieve large exposure area and to fabricate fine patterns.
Therefore, at Himeji Institute of Technology, large
exposure field EUV camera consists of three asphericalmirrors was developed. First in the world, we fabricated 60
nm line and space pattern in the large exposure area of 10
mm×10 mm on a wafer. Furthermore, BL03B beamline
branches from the BL03 beamline propose for the usage of
the EUVL microscope for the EUVL finished mask
inspection.

Table 3. Spectification of the exposure tool (ETS-1)
Imaging optics
Three aspherical mirrors
Exposure wavelength13.5 nm
Numerical aperture
0.1
Demagnification
1/5
Resolution
60 nm
Depth of focus
0.9 µmExposure area (static)
30 mm×1 mm
Exposure area (scanning)
30 mm×28 mm
Mask size
4 inch, 8 inch, and ULE 6025
Wafer size
8 inchExposure environment
In vacuum
IV. BL05
BL05 was constructed in response to a demand in theindustrial world, that is enhancement of the analysis ability
in the soft x-ray region with the development of
nanotechnology. BL05 consists of two branch lines for use
in the wide range from 50 eV to 4000 eV. BL05A and
BL05B are designed to cover the energy range of
1300-4000 eV and 50-1300 eV, respectively. The incident
beam from the bending magnet is provided for two branchlines through different windows of a mask. Therefore,
these two branch lines can be employed simultaneously.

1) The double crystal monochromator was installed at
the BL05A. InSb crystals and Si crystals are prepared for a
double-crystal monochromator. Toroidal mirrors are used
as a pre-mirror and a focusing mirror of BL05A. XAFS
measurement in the total electron yield mode andfluorescence XAFS measurement using SSD (SII Vortex)
can be performed. The fluorescence XAFS spectra can bemeasured for samples at the end station filled with He gas.

Table 4. Monochromator specification
Monochromator
Double crystal monochromator
Monochromator crystals
InSb(111), Si(111)Energy range
1300-4000 eV
E/㼺E=3000
Resolution

2) The constant-deviation monochromator consisting of ademagnifying spherical mirror and a varied-line-spacing
plane grating (VLSPG), which can provide high resolution,
simple wavelength scanning with fixed slits, was mounted

on BL05B. The optical system consists of a first mirror(M0), a second mirror (M1), an entrance slit (S1), a
pre-mirror (M2), and three kinds of plane grating (G), an
exit slit (S2) and a focusing mirror (M3). The including

angle of the monochromator is 175°. Two measurement
chambers are prepared at the end station of BL05B. The
XAFS spectra in the total electron yield mode andfluorescence XAFS spectra using SDD (EDAX) can bemeasured in a high vacuum chamber. In addition, theMonochromator
Grating
Energy range
Resolution

Table 5. Monochromator specification
Varied-line-spacing plane grating monochromator
100 l/mm, 300 l/mm, 800 mm/l
50-1300 eV
E/㼺E=3000

V. BL06
BL06 has been mainly developed for irradiation
experiments such as photochemical reaction, SR-CVD,
photo-etching, surface modification. The white radiation
beam from bending magnet is introduced to the sample
stage using a pair of mirror, whose incident angle was 3°.
The SR at BL06 sample stage had a continuous spectrum
from IR to soft x-ray, which was lower than 1 keV. A
VI. BL07A and BL07B
This beamline was designed for the development of
new materials by SR technology. This beamline consists of
two branch lines, which are provided with an incident
beam from a 3-m undulator by switching the first mirror.
One of them is a high photon-flux beamline with amultilayered-mirror monochromator for the study of
SR-process (BL07A) and another is a high-resolution
beamline with a varied line spacing grating
monochromator for the evaluation of nano-structure
characteristics by SR-spectroscopy (BL07B). The usefulrange of emitted photons from 50 to 800 eV is covered atboth beamlines. The light source of BL07 is a 3-m lengthplanar undulator, which consists of 29 sets of permanent
magnets, a period length of which is 76 mm. The incident
beam from the undulator is provided for two branch lines
by translational switching of first mirror.

Energyrange(eV)Material

50-60
60-95

Mo/Si

90-140140-194
190-400
400-560
550-800

Mo/B4C
Ni/C

photoelectron spectrum can be measured using sphericalelectron analyzer (VG Sienta, R3000) in an ultra
high-vacuum chamber. The chambers can be replaced byeach other within 1 hour.

differential pumping system can be utilized forexperiments in a gas atmosphere, which is difficult in thesoft x-ray region. A sample holder can install four pieces ofsamples at a time. By using heater set in the sample holder,
the sample can be heated from room temperature to 220qC.
The temperature of sample is monitored using a Cr-Al
thermocouple mounted on the sample holder.

1) BL07A
The multilayered-mirror (MLM) monochromator,
which has high reflectivity in the soft X-ray region, wasinstalled at the BL07A. It consists of a switching mirror
chamber, a slit chamber, a MLM monochromator, a filter
chamber and a reaction chamber. To obtain a large photon
flux, we decided to use only first mirror (switching mirror),M0, for focusing. The MLM monochromator is designed tocover an energy range of up to about 800 eV by
combination of three kinds of mirror pairs with 4 kinds offilter. The flux deliver by this design is estimated to be
between a maximum of 1017 photons/s at 95 eV and aminimum 2u1014 photons/s at 300 eV for a 500 mA ring
current.

Table 6. Summary of BL07A.
Multilayer mirror
spacing
Thickness number of
Ratio
layers
20 nm
11 nm
5 nm

0.8
0.5
0.5

20
25
60

'E/E

Filtermaterial thickness
Al

100 nm

None



Ag

100 nmCr

500 nmNi

500 nm

6.2 %
3.3 %
2.5 %

2) BL07B
The constant-deviation monochromator consisting of ademagnifying spherical mirror and varied line spacing
plane grating (VLSPG), which can provide to highresolution, simple wavelength scanning with fixed slits,
was mounted on BL07B. The optical system consists of afirst mirror (M0), a entrance slit (S1), a premirror (M1),and three kinds of plane grating (G), an exit slit (S2) and afocusing mirror (M2). The monochromator is designed tocover the energy range 50-800 eV with three gratings, ofwhich including angle are 168q. The VLSPG has been wellknown to obtain high resolution in extreme ultraviolet
region by diminishing various kinds of aberration. The
total resolving power about 3000 can be realized in thewhole energy region.

Table 7. Monocromator specification
Mount type
Hettrick-Underwood type
Grating G1, G2, G3
Plane VLS (600 l/mm, 1200 l/mm, 2400 l/mm)
Energy range
50-150 eV, 150 – 300 eV, 300-800 eVResolving power (E/ǍE)㨪3000
VII. BL9A purpose of this beamline is studies on a soft x-ray
interferometry or a holographic exposure experiment withmaking use of highly brilliant and coherent photon beams
radiated from 11 m long undulator in NewSUBARU.
BL09 consists of M0 mirror, M1 mirror, G grating andM2 and M3 mirror. M0 and M3 mirrors are used forhorizontal deflection and beam convergence, M1 is usedfor vertical beam convergence at the exit slit, and M2 isused for vertical deflection and beam convergence. A
monochromator is constructed by M1 and a plane grating.
The maximum acceptance of the undulator beam is 0.64
mrad in horizontal and 0.27 mrad in vertical. The

acceptance can be restricted by 4-jaw slits equipped at
upstream of the M0 mirror.
BL09B beamline branched from BL09 beamline for theusage of the EUV interference lithography for theevaluation of the exposure characteristics of EUV resist.
Coherence length of 1 mm at the resist exposure position
was achieved using BL09B beamilne. And BL09C
beamline branched from BL09B beamline for the usage ofthe thickness measurement of the carbon contamination
originated to the resist outgassing during the EUV
exposure.

Table 8. Monochromator specification
Mount type
Hettrick-Underwood type
Grating
Plane VLS (900 l/mm)
Energy range
50 – 600 eVResolving power (E/ǍE)㨪3000
VIII. BL10
BL10 is for the global use in the Himeji Institute ofTechnology. M0 mirror is used for horizontal deflection andbeam convergence, M1 is used for vertical beam
convergence at the exit slit, and M2 is used for verticaldeflection and beam convergence. A monochromator isconstructed by M1 and a plane grating. At the beginning,the multiplayers reflectiveity measurement was carried out
at this beamline. The characteristics of this beamline andthe result of the Mo/Si multiplayers measurement are
carried out for the development of the EUVL mask
techmology.
BL10 utilizes a monochromator of the varied line

spacing plane grating monochromator (VLS-PGM). Theline density of the monochromator in central region of thegrating is 600 lines/mm. The reflectometer is a two axis
vacuum goniometer using two Huber goniometers. One
axis carries the sample, which may for examplee be amirror at the center of the reflectometer vacuum tank(T-motion). The other (M-motion) carries the detector on arotating arm. In addition there are through-cacuum linear
motions to translate the sample in two orthogonal directions(x,y). All motors are controlled by computer. The sample
itself is mounted on a kinematic holder. The controlstage
monochromator rotation, and data analysis were programusing LABVIEW software. The reflectivity result obtainedat BL10 has a good agreement with that at LBNL.
The mirso-CSM tool was adapted at the mostdownstream of the BL10 beamline fot the EUV mask defectinspection. This too is very effective for the inspection of
the actinic patterned mask.

Table 9. Monochromator specification
Mount type
Hettrick-Underwood type
Grating
Plane VLS (600 l/mm)
Energy range
50 – 600 eVResolving power (E/ǍE)㨪1000
IX. BL11
A beam line BL11 is constructed for exposure Hard
X-ray Lithography (DXL) in the LIGA (German acronym
for Lithographite Galvanoformung and Abformung)process. LIGA process, that utilizes a useful industrial
application of SR, is one of the promising technologies forfabrication of extremely tall three-dimensional
microstructures with a large aspect ratio. This process wasinvented at the Institut Fur Mikrostrukturtechnik (IMT) of
the Karlstuhe Nuclear Center (KfK) in 1980.
Microstructures with height of over a few hundreds µm
have been widely applied to various fields such as
micro-mechanics, micro-optics, sensor and actuator
technology, chemical, medical and biological engineering,and so on. This beam line was designed by the criteria ;photon energy range 4 keV to 6 keV, a beam spot size on
the exposure stage t 50u5 mm2, a density of total
irradiated photons t 1011 photons/cm2. BL11 of anabsorber chamber, a first-mirror chamber (M1), a
second-mirror chamber (M2), a 4-way slit chamber, a Be
window chamber, and an exposure chamber. The second
pre-mirror is bent elliptically using a bending mechanism.

Fine bending adjustment of the M2 mirror can be made in
the UHV by the pulse motor. The LIGA process needs thephoton energies of 3 keV to 6 keV, the optics of a LIGA
beam line generally employ a Pt monolayered-mirror anda Be window, which cuts off low-energy photons. The
reflectivity of a Pt-coated mirror is about 55 % in therange of photon energy from 2 keV to 4 keV, however, it
drops to 30 % at the photon energy of 6 keV. Therefore,
new materials with a high reflectivity must to be found for
Deep X-ray lithography (DXL) in this energy range. We
propose the use of a Ni/W/C multilayered-mirror with agraded d-spacing in the range of photon energy from 3 eV
to 6 keV. The calculated reflectivity of the Ni/W/C
multilayered-mirror is higher than 56 % at the photon
energy of 6 keV with a glazing incident angle of 0.8
degrees, and photons that have higher photon energy than
6 keV can be removed A 200 µm-thick beryllium (Be)window in a Be window chamber is used to separate theultra-high vacuum part from the low vacuum part and to
cut off low-energy photons.

Table 10. Specification of the LIGA exposure system
Exposure method
Proximity exposure
Wafer size
4 inch50 mm(H)×80 mm(V)
Exposure area
Exposure environment< 1atm (He-gas)