Complementary MOSFET (common drain)
ELM55521CA-S■General description

http://www.elm-tech.com■Features

ELM55521CA-S uses advanced trenchtechnology to provide excellent Rds(on),low gate charge and low gate thresholdvoltage.

N-channel

P-channel• Vds=100V• Id=5.0A• Rds(on) = 110mΩ(Vgs=10V)• Rds(on) = 120mΩ(Vgs=4.5V)■Maximum absolute ratings
Parameter

SymbolVds

Drain-source voltage
Gate-source voltage

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit100-100VVgs

Continuous drain current(Tj=150°C)

±20
5.0
3.0

±20-5.0-3.0

V

Idm

8-8APd

2.8
1.8

2.8
1.8

W

TjTstg150-55 to 150

150-55 to 150°C°C

Ta=25°C
Ta=70°C

Pulsed drain current

Id

Tc=25°C
Tc=70°C

Power dissipation
Operating junction temperature
Storage temperature range• Vds=-100V• Id=-5.0A• Rds(on) = 190mΩ(Vgs=-10V)• Rds(on) = 200mΩ(Vgs=-4.5V)

A■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

SymbolRθjaRθja■Pin configuration

1 23 4

Typ.

Max.
62.5
62.5

Unit°C/W°C/W■Circuit

TO-252-4(TOP VIEW)
TAB

DeviceN-chP-ch• N-ch
Pin No.

Pin name

123SOURCE1GATE1
SOURCE24TABGATE2DRAIN1/DRAIN2• P-chRev.1.0
1/ 8

Complementary MOSFET (common drain)
ELM55521CA-S

http://www.elm-tech.com■Electrical characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit

Condition

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

IdssVds=80V, Vgs=0V

100
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

1.0

On state drain current

Id(on) Vgs=10V, Vds≥5V8

Static drain-source on-resistanceRds(on)μA±100
2.5nAVA

8690

Vds=10V, Id=3.0A
Is=3.0A, Vgs=0V

120.8

Vgs=0V, Vds=50V, f=1MHz415
40pF
pF

20pF

Gfs
VsdIs

Input capacitance
Output capacitance

Ciss
CossReverse transfer capacitance
SWITCHING PARAMETERSTotal gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgdtd(on)Turn-on rise timetr
RL=23.8Ω, Id≡2.1A
td(off)Rgen=1.0Ω
tf

Turn-off delay timeTurn-off fall time

1.8

15

Vgs=10V, Id=5.0A
Vgs=4.5V, Id=3.0A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

Qg

V

Vgs=10V, Vds=50V
Id≡4.5A
Vgs=10V, Vds=50V

10.0110120
1.2215.0mΩ
SVAnC

1.7nC

2.0
1015nCns

10121520nsns

1015nsRev.1.0
2/ 8

AFC5521

Alfa-MOS

100V N & P Pair(common drain) Mode MOSFET
Complementary MOSFETEnhancement
Technology
ELM55521CA-S■Typical electrical and thermal characteristics (N-ch)

http://www.elm-tech.com

Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A July 2013www.alfa-mos.com
Page 4

Rev.1.0
3/ 8

AFC5521

Alfa-MOS

100V N & P Pair
Technology(common drain) Mode MOSFET
Complementary MOSFETEnhancement
ELM55521CA-S
Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A July 2013

http://www.elm-tech.com

www.alfa-mos.com
Page 5Rev.1.04/ 8

Complementary MOSFET (common drain)
ELM55521CA-S

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-80V, Vgs=0V-100
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA-1.0

On state drain current

Id(on) Vgs=-10V, Vds≥-10V-18

Static drain-source on-resistanceRds(on)μA±100-2.5

nAVA

167
177

Vds=-15V, Id=-3.2A
Is=-2A, Vgs=0V

12-0.8

Vgs=0V, Vds=-50V, f=1MHz

1100
70

pF
pF

45

pF

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
CossReverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgdtd(on)Turn-on rise timetr
Id=-2.8A, RL=17Ω
td(off)Rgen=1Ω
tfTurn-off delay timeTurn-off fall time

-1-30

Vgs=-10V, Id=-5.0A
Vgs=-4.5V, Id=-3.0A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERSQg

V

Vgs=-4.5V, Vds=-50V
Id=-4.0A
Vgs=-10V, Vds=-50V

12.0

190
200-1.3-220.0mΩ
SVA

nC

3.0nC

4.5815nC
ns

15352050

nsns

1025nsRev.1.05/ 8

AFC5521

Alfa-MOS

100V N & P Pair
Technology(common drain) Mode MOSFET
Complementary MOSFETEnhancement
ELM55521CA-S■Typicalelectrical (andthermal characteristics(P-ch)
TypicalCharacteristics
P-Channel)©Alfa-MOS Technology Corp.
Rev.A July 2013

http://www.elm-tech.com

www.alfa-mos.com
Rev.1.0
Page 6

6/ 8

AFC5521

Alfa-MOS

100V N & P Pair
Technology(common drain) Mode MOSFET
Complementary MOSFETEnhancement
ELM55521CA-S
Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A July 2013

http://www.elm-tech.com

www.alfa-mos.com
Page 7

Rev.1.0
7/ 8

AFC5521

Alfa-MOS

100V N & P Pair
TechnologyMode MOSFET(common drain)
Complementary MOSFET Enhancement
ELM55521CA-S
Typical■Test
Characteristics
circuit and waveform©Alfa-MOS Technology Corp.
Rev.A July 2013

http://www.elm-tech.com

www.alfa-mos.com
8/ 8

Rev.1.0
Page 8