DISCRETE SEMICONDUCTORSDATA SHEET
book, halfpage

M3D186

BRY56A
Programmable unijunction
transistor
Product specification

1999 May 31

Philips Semiconductors

Product specification

Programmable unijunction transistor
DESCRIPTION

BRY56APINNING

Planar PNPN trigger device in a
TO-92; SOT54 plastic package.

PINAPPLICATIONSDESCRIPTION

1gate

2

anode

3cathode• Switching applications such as:– Motor control
anodeahandbook, halfpage– Oscillators– Relay replacement

book, halfpage

1– Timers

23ggate– Pulse shapers, etc.
MSB033kcathode

MGL167Fig.1 Simplified outline (TO-92; SOT54) and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERCONDITIONS

MIN.

MAX.

UNIT

VGA

gate-anode voltage−70V

IA(AV)

average anode current−175mA

IARM

repetitive peak anode current

−

2.5

AIASM

non-repetitive peak anode current tp = 10 µs−3A

dlA/dtrate of rise of anode current

IA ≤ 2.5 A−

20A/µsPtot

total power dissipation

Tamb ≤ 75 °C−300mW

Tstg

storage temperature−65+150°CTjjunction temperature−150°C

Tamboperating ambient temperature−65+150°C

1999 May 31

tp = 10 µs; δ = 0.012Philips Semiconductors

Product specification

Programmable unijunction transistor

BRY56A

THERMAL CHARACTERISTICSSYMBOLRth j-a

PARAMETERCONDITIONS

VALUE

UNIT

250

K/W

thermal resistance from junction to ambient in free air

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOLPARAMETERCONDITIONS

peak point current

IPMIN.

TYP.

MAX.

UNIT

VS = 10 V; RG = 10 kΩ; see Fig.7−−200nA

VS = 10 V; RG = 100 kΩ; see Fig.7−−60nA−−µA

IVvalley point current

VS = 10 V; RG = 10 kΩ; see Fig.72VS = 10 V; RG = 100 kΩ; see Fig.7

1−−µA

Voffsetoffset voltage

typical curve; IA = 0; see Fig.7−

VP − VS −V

IGAO

gate-anode leakage current

IK = 0; VGA = 70 V; see Fig.5−−10nA

IGKS

gate-cathode leakage current VAK = 0; VKG = 70 V; see Fig.6−−100nAVAK

anode-cathode voltage

IA = 100 mA−−1.4VVOM

peak output voltageVAA = 20 V; C = 10 nF;
see Figs 8 and 96−−Vtrrise time

VAA = 20 V; C = 10 nF; see Fig.9−−80nshandbook, full pagewidth+40 V
BZY88C8V25 kΩ

A

R1100 µF
BY206(2x)

40 K

750
Ω

RG

1 nF
D.U.T10 kΩ

20 ΩVSosc.

MBK189IP and IV determined by value of R1.
1
R1 = ---- ; i.e. maximum voltage drop over R1 = 1 V.
IAInternal resistance of oscilloscope = 10 MΩ.

Fig.2 Measuring circuit for peak and valley point currents.

1999 May 313Philips Semiconductors

Product specification

Programmable unijunction transistor

BRY56A+VB

handbook, halfpage

handbook, halfpage

IARG =R2
DUTVAK
DUT

R1

VS =R1 R2
R1 R2

R1
R1 R2

VB

MBB699
MEA141

Fig.4
Fig.3 BRY56A with ‘program’ resistors R1 and R2.

handbook, halfpage

DUT
VGA

VGK

MBB696

MBB697

Fig.5

Equivalent test circuit for gate-anodeleakage current.

1999 May 31

I GKS

handbook, halfpage

DUT
I GAO

Equivalent test circuit for characteristics
testing.

Fig.6

4

Equivalent test circuit for gate-cathodeleakage current.

Philips Semiconductors

Product specification

Programmable unijunction transistor

BRY56AIAhandbook, halfpage

VAA

handbook, halfpage

1.5
MΩ

16 kΩ

DUTC
I(V)

VO20 Ω27 kΩI(P)VS V(P)VAK

MBB698

MEA143

Fig.7 Offset voltage.

handbook, halfpage

Fig.8 Test circuit for peak output voltage.

MBB701

VOVOM
90 %

10 %
trtimeFig.9 Peak output voltage.

1999 May 315

Philips Semiconductors

Product specification

Programmable unijunction transistor

BRY56A

PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads

SOT54cEdA

Lb1
e12De3b1

L10

2.5

5 mmscale

DIMENSIONS (mm are the original dimensions)
UNITAbb1cDdEee1

L

L1(1)

mm

5.2
5.0

0.48
0.40

0.66
0.56

0.45
0.40

4.8
4.4

1.7
1.4

4.2
3.6

2.54

1.27

14.5
12.7

2.5

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54

1999 May 31

REFERENCES
IEC

JEDEC

EIAJ

TO-92

SC-43

6EUROPEAN
PROJECTION

ISSUE DATE
97-02-28Philips Semiconductors

Product specification

Programmable unijunction transistor

BRY56A

DEFINITIONS
Data Sheet Status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 May 31

7

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Internet: http://www.semiconductors.philips.com© Philips Electronics N.V. 1999

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Printed in The Netherlands

115002/01/pp8

Date of release: 1999 May 31

Document order number:

9397 750 05969