2N6027, 2N6028
Preferred Device

Programmable
Unijunction Transistor
Programmable Unijunction
Transistor Triggers
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Designed to enable the engineer to “program’’ unijunction
characteristics such as RBB, h, IV, and IP by merely selecting
two resistor values. Application includes thyristor−trigger, oscillator,pulse and timing circuits. These devices may also be used in special
thyristor applications due to the availability of an anode gate. Suppliedin an inexpensive TO−92 plastic package for high−volume
requirements, this package is readily adaptable for use in automaticinsertion equipment.

PUTs
40 VOLTS, 300 mW
GAKFeatures• Programmable − RBB, h, IV and IP• Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA• Low Gate to Anode Leakage Current − 10 nA Maximum• High Peak Output Voltage − 11 V Typical• Low Offset Voltage − 0.35 V Typical (RG = 10 kW)• Pb−Free Packages are Available*

1TO−92 (TO−226AA)
CASE 029
STYLE 16
23MARKING DIAGRAM

2N602xAYWW GG

2N602x= Device Codex = 7 or 8A= Assembly Location
Y= Year
WW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)

PIN ASSIGNMENT
1Anode2

Gate3

CathodeORDERING INFORMATION*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006

May, 2006 − Rev.6

1

See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.

Publication Order Number:
2N6027/D

2N6027, 2N6028
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
RatingSymbolValueUnit

PF
1/qJA

300
4.0mWmW/°C

DC Forward Anode Current*
Derate Above 25°C

IT

150
2.67mAmA/°C

DC Gate Current*

IG"50mA

Repetitive Peak Forward Current
100 ms Pulse Width, 1% Duty Cycle
20 ms Pulse Width, 1% Duty Cycle*

ITRM

Non−Repetitive Peak Forward Current
10 ms Pulse Width

ITSM

5.0A

Gate to Cathode Forward Voltage*

VGKF40V

Gate to Cathode Reverse Voltage*

VGKR*5.0VGate to Anode Reverse Voltage*

VGAR

40V

Anode to Cathode Voltage* (Note 1)

VAK±40V

Capacitive Discharge Energy (Note 2)

E250mJPower Dissipation (Note 3)

PD300mW

Operating Temperature

TOPR−50 to +100°C

Junction Temperature

TJ−50 to +125°C

Storage Temperature Range

Tstg−55 to +150°C

Power Dissipation*
Derate Above 25°C

A
1.0
2.0

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above theRecommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affectdevice reliability.
*Indicates JEDEC Registered Data
1. Anode positive, RGA = 1000 W
Anode negative, RGA = open
2. E = 0.5  CV2 capacitor discharge energy limiting resistor and repetition.
3. Derate current and power above 25°C.

THERMAL CHARACTERISTICS
CharacteristicSymbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

75°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

200°C/W

Maximum Lead Temperature for Soldering Purposes(t1/16″ from case, 10 seconds maximum)

TL

260°C

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2

2N6027, 2N6028
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak Current*(VS = 10 Vdc, RG = 1 MW)

Fig. No.

Symbol2,9,11IPMin

TypMax

−−−
−

1.25
0.08
4.0
0.70

2.0
0.15
5.0
1.0

0.2
0.2
0.2

0.70
0.50
0.35

1.6
0.6
0.6

−
−
70
25
1.5
1.0

18
18150
150
−
−

50
25−
−−−

mA

2N60272N60282N60272N6028(VS = 10 Vdc, RG = 10 kW)
Offset Voltage*(VS = 10 Vdc, RG = 1 MW)

1VTV2N6027
2N6028(Both Types)(VS = 10 Vdc, RG = 10 kW)
Valley Current*(VS = 10 Vdc, RG = 1 MW)

1,4,5mA

IV

2N60272N60282N60272N60282N60272N6028(VS = 10 Vdc, RG = 10 k W)
(VS = 10 Vdc, RG = 200 W)
Gate to Anode Leakage Current*(VS = 40 Vdc, TA = 25°C, Cathode Open)(VS = 40 Vdc, TA = 75°C, Cathode Open)−

Gate to Cathode Leakage Current(VS = 40 Vdc, Anode to Cathode Shorted)−

Forward Voltage*(IF = 50 mA Peak) (Note 4)

UnitmA

IGAOnAdc−−1.0
3.0

10−

IGKS−

5.050

nAdc

1,6VF−0.81.5V

Peak Output Voltage*(VG = 20 Vdc, CC = 0.2 mF)

3,7Vo

6.011−

VPulse Voltage Rise Time
(VB = 20 Vdc, CC = 0.2 mF)

3tr−

4080

ns

*Indicates JEDEC Registered Data
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

IA

IA+VB
A
G

R2− VS =VAK

R1V
R1 + R2 B

+−VP

VS

VT = VP − VS

RG

VAK

R1VA

RG = R1 R2
R1 + R2VSKVFVVIGAO1B − Equivalent Test Circuit for
Figure 1A used for electricalcharacteristics testing(also see Figure 2)

1A − Programmable Unijunction
with Program" Resistors
R1 and R2IPIVIF

IA

IC − Electrical Characteristics

Figure 1. Electrical Characterization

AdjustforTurn−onThreshold

100 k
1.0%

2N5270VB
0.01 mF
Scope
20+VB−IP (SENSE)
100 mV = 1.0 nA+

Put
Under
Test+V
510 k

16 k

Vo
6.0 V

R
RG = R/2
VS = VB/2(See Figure 1)

CCvo20 W

27 k
0.6 Vtf

R

Figure 2. Peak Current (IP) Test CircuitFigure 3. Vo and tr Test Circuit
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3t

2N6027, 2N6028
TYPICAL VALLEY CURRENT BEHAVIOR
500

IV, VALLEY CURRENT (m A)

IV, VALLEY CURRENT (m A)

1000

RG = 10 kW

100100 kW

1 MW

100

RG = 10 kW

100 kW
1 MW

101051015

5−5020+50+100+75

TA, AMBIENT TEMPERATURE (°C)

Figure 4. Effect of Supply Voltage

Figure 5. Effect of Temperature

252.0
1.0
0.5
0.2
0.1
0.05

CC = 0.2 mF

TA = 25°C(SEE FIGURE 3)

TA = 25°C
Vo, PEAK OUTPUT VOLTAGE (V)VP, PEAK FORWARD VOLTAGE (V)+25

VS, SUPPLY VOLTAGE (V)105.00−252015101000 pF

5.00.02
0.01
0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.000

5.0

5.01015202530IF, PEAK FORWARD CURRENT (AMP)

VS, SUPPLY VOLTAGE (V)Figure 6. Forward Voltage

Figure 7. Peak Output Voltage

AE

RT

R2PNP
NG

K+B2

A
G

RBB = R1 + R2
R1h=R1 + R2
R1R2GAR1CCKKB1Circuit Symbol

Equivalent Circuitwith External Program"
Resistors R1 and R2Figure 8. Programmable Unijunction

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4Typical Application

3540

2N6027, 2N6028
TYPICAL PEAK CURRENT BEHAVIOR
2N6027100505.0

IP, PEAK CURRENT ( mA)

IP, PEAK CURRENT ( mA)

103.0
2.0
1.0
RG = 10 kW
0.5

100 kW
1.0 MW

0.30.2TA = 25°C(SEE FIGURE 2)

20

VS = 10 V(SEE FIGURE 2)

105.0
2.0
1.00.5

RG = 10 kW
100 kW
1.0 MW

0.2
0.1
5.0

10150.1−50

20−250+25+50+75

VS, SUPPLY VOLTAGE (V)TA, AMBIENT TEMPERATURE (°C)

Figure 9. Effect of Supply Voltage and RG

Figure 10. Effect of Temperature and RG

+100

105.0
IP, PEAK CURRENT ( mA)

IP, PEAK CURRENT ( mA)

2N60281.00.70.5
RG = 10 kW
0.3
0.2

100 kW

0.1
0.07
0.05

1.0 MW

0.03
0.02

TA = 25°C(SEE FIGURE 2)

2.0

VS = 10 V(SEE FIGURE 2)

1.0
0.5
0.2

RG = 10 kW

0.1

0.05

100 kW
1.0 MW

0.02
0.01
5.0

1015
VS, SUPPLY VOLTAGE (V)

0.01
−5020

Figure 11. Effect of Supply Voltage and RG−25+25+750+50TA, AMBIENT TEMPERATURE (°C)

+100Figure 12. Effect of Temperature and RG

ORDERING INFORMATION
U.S.

European EquivalentShipping†

Description of TO−92 Tape Orientation

5000 Units / Box

N/A − Bulk

2000 / Tape & Reel

Round side of TO−92 and adhesive tape visible

2N60272N6027G
2N60282N6028G
2N6027RLRA
2N6027RLRAG
2N6028RLRA

2N6027RL1
2N6027RL1G

2N6028RLRAG
2N6028RLRM
Flat side of TO−92 and adhesive tape visible

2N6028RLRMG
2000 / Tape & Ammo Box
2N6028RLRP

Round side of TO−92 and adhesive tape visible
2N6028RLRPG†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*The “G’’ suffix indicates Pb−Free package available.

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5

2N6027, 2N6028
PACKAGE DIMENSIONS

TO−92 (TO−226AA)
CASE 029−11
ISSUE ALANOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

B

R
P
L
SEATING
PLANE

K

DIM
A
B
C
DG
H
JK
L
N
P
R
V

DX X
GJ

H
V

C
SECTION X−X

1NN

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−0.250−−−0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.042.66−−−
2.54
2.93−−−
3.43−−−STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE

ON Semiconductor andare registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 81−3−5773−3850

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For additional information, please contact your local
Sales Representative

2N6027/D