RB160VA-40
DiodesSchottky barrier diodeRB160VA-40
z Land size figure (Unit : mm)

z External dimensions (Unit : mm)zApplications
General rectification

1.1

0.17±0.1
0.05

1.9±0.1

2.5±0.2

zFeatures
1) Small mold type. (TUMD2)
2) Low IF, Low IR.
3) High reliability.

0.8 0.52.0

1.3±0.05

TUMD2

zStructure
zConstruction
Silicon epitaxial planar

0.8±0.05
0.6±0.2
0.1

ROHM : TUMD2
dot (year week factory) + day

z Taping specifications (Unit : mm)
0.25±0.05

1.75±0.1

8.0±0.2
2.752.8±0.05

φ1.55±0.10

2.0±0.05

3.5±0.0 5

4.0±0.1

1.43±0.05

4.0±0.1

φ1.0±0.200.9±0.08

zAbsolute maximum ratings (Ta=25°C)

Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)Average rectified forward current
Forward peak surge current（60Hz・1cyc）
Junction temperature
Storage temperature

LimitsSymbol
VRM
VR
Io
IFSM
Tj
Tstg

4040
15150-40 to +150

UnitVVA
A℃℃

zElectrical characteristics (Ta=25°C)

Parameter
Forward voltage
Reverse current

SymbolVFMin.

Typ.

Max.

Unit-0.50

0.55

VIR-

1.550

µA

Conditions
IF=700mA
VR=40V

Rev.B

1/3

RB160VA-40
DiodeszElectrical characteristic curves (Ta=25°C)
100000

1Ta=25℃
0.01

Ta=-25℃

1000

10Ta=25℃

1
Ta=-25℃

0.1

100
200
300
400500
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS

600

10102030
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS

500
AVE:501.9mV490

201510
AVE:1.5772uA

5VF DISPERSION MAP

170
160
150140130120110

AVE:121.1pF

Ct DISPERSION MAP

IR DISPERSION MAP

302015PEAK SURGEFORWARD CURRENT:IFSM(A)

1cyc

Ifsm

8.3ms

105AVE:15.6A

Ifsm
15PEAK SURGEFORWARD CURRENT:IFSM(A)208.3ms 8.3ms
1cyc

1050025Ifsm
t20151050110100

1Mounted on epoxy board

1IF=0.2A

10100

TIME:t(ms)IFSM-t CHARACTERISTICS

NUMBER OF CYCLESIFSM-CYCLE CHARACTERISTICSIFSM DISRESION MAP

IM=10mA

180

100048030

Ta=25℃
f=1MHz
VR=0V
n=10pcs

190

CAPACITANCE BETWEENTERMINALS:Ct(pF)

510

1020REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS200Ta=25℃
VR=40V
n=30pcs

25REVERSE CURRENT:IR(uA)

520

1000

04030
Ta=25℃
IF=0.7A
n=30pcs

100.01530

0.30.9D=1/2timeRth(j-a)

300us

100
Rth(j-c)

FORWARD POWERDISSIPATION:Pf(W)

0.81ms0.7

REVERSE POWERDISSIPATION:PR (W)FORWARD VOLTAGE:VF(mV)

100

Ta=75℃

1000.001
0PEAK SURGEFORWARD CURRENT:IFSM(A)f=1MHzCAPACITANCE BETWEENTERMINALS:Ct(pF)

Ta=75℃

REVERSE CURRENT:IR(uA)

FORWARD CURRENT:IF(mA)

Ta=125℃
0.10.001

TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)

1000

Ta=150℃ Ta=125℃
10000

Ta=150℃

Sin(θ＝180)

0.6

DC

0.50.40.3

0.2Sin(θ＝180)
D=1/20.1

DC

0.20.1100.001

0.110

TIME:t(s)Rth-t CHARACTERISTICS

10000000.5
11.5
AVERAGE RECTIFIEDFORWARD CURRENT：Io(A)Io-Pf CHARACTERISTICS

2010203040REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS

Rev.B

2/3

RB160VA-40
Diodes
2

D=1/2

1.5

DC

DC

Io0A
0VtT

VR
D=t/T
VR=20V
Tj=150℃

10.5Sin(θ＝180)

AVERAGE RECTIFIEDFORWARD CURRENT:Io(A)AVERAGE RECTIFIEDFORWARD CURRENT:Io(A)

2Sin(θ＝180)
1.5
D=1/21Io0A
0V

0.5tTVR
D=t/T
VR=20V
Tj=125℃

000255075100125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)

1500255075

100125150

CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)

Rev.B

3/3

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by anymeans without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability ofwhatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell orotherwise dispose of the same, no express or implied right or license to practice or commerciallyexploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices(such as audio visual equipment, office-automation equipment, communications devices, electricalappliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level ofreliability and the malfunction of with would directly endanger human life (such as medical instruments,transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and othersafety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1