DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpage

M3D088

BRY61
Programmable unijunction
transistor
Product specification
Supersedes data of 1997 Jul 21

1999 Apr 27

Philips Semiconductors

Product specification

Programmable unijunction transistor
DESCRIPTION

BRY61

PINNING

Planar PNPN trigger device in a
SOT23 plastic package.
APPLICATIONSPINDESCRIPTION

1

anode

2

cathode3gate• Switching applications such as:– Motor control– Oscillators– Relay replacement

handbook, 2 columns

3

anodeahandbook, halfpage– Timersggate– Pulse shapers, etc.
MARKING1TYPE
NUMBER
BRY61

MARKING
CODE(1)Top view

kcathode2

MGL167

MGC421A5∗Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.

Fig.1 Simplified outline SOT23 and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERCONDITIONS

MIN.

MAX.

UNIT

VGA

gate-anode voltage−70

V

IA(AV)

average anode current

−

175mA

IARM

repetitive peak anode current

−

2.5

A

IASM

non-repetitive peak anode current tp = 10 µs−3A

tp = 10 µs; δ = 0.01

dlA/dtrate of rise of anode current

1A ≤ 2.5 A−20A/µs

Ptot

total power dissipation

Tamb ≤ 25 °C−250mW

Tstg

storage temperature−65+150°C

Tj

junction temperature−150°C

Tamb

operating ambient temperature−65+150°C

1999 Apr 272

Philips Semiconductors

Product specification

Programmable unijunction transistor

BRY61

THERMAL CHARACTERISTICSSYMBOLRth j-a

PARAMETERCONDITIONS

thermal resistance from junction to ambient

VALUE

UNIT

500

K/W

in free air

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOLPARAMETERCONDITIONS

peak point current

IPMIN.

TYP.

MAX.

UNIT

VS = 10 V; RG = 10 kΩ; (see Fig.7)

−−0.2

µA

VS = 10 V; RG = 100 kΩ; (see Fig.7)−−0.06

µA

2−−µA

IV

valley point current

VS = 10 V; RG = 10 kΩ; (see Fig.7)
VS = 10 V; RG = 100 kΩ; (see Fig.7)

1−−µA

Voffsetoffset voltage

typical curve; IA = 0; (see Fig.7)−VP − VS−VIGAO

gate-anode leakage current

IK = 0; VGA = 70 V; (see Fig.5)−−10nA

IGKS

gate-cathode leakage current

VAK = 0; VKG = 70 V; (see Fig.6)−−100nAVAK

anode-cathode voltage

IA = 100 mA

−−1.4

VVOM

peak output voltage

VAA = 20 V; C = 10 nF;(see Figs 8 and 9)

6−−Vtrrise time

VAA = 20 V; C = 10 nF; (see Fig.9)−−80nshandbook, full pagewidth+40 V
BZY88C8V25 kΩ

AR1100 µF
BY206(2x)

40 K

750
Ω

RG

1 nF
D.U.T10 kΩ

20 ΩVSosc.

MBK189IP and IV determined by value of R1.
1
R1 = ---- ; i.e. maximum voltage drop over R1 = 1 V.
IA
Internal resistance of oscilloscope = 10 MΩ.

Fig.2 Measuring circuit for peak and valley point currents.

1999 Apr 27

3

Philips Semiconductors

Product specification

Programmable unijunction transistor

BRY61+VB

handbook, halfpage

handbook, halfpage

IA

R2
RG =DUT
VAK

R1

DUT

MEA141

Fig.4

VGA

VGK

MBB696Equivalent test circuit for gate-anodeleakage current.

1999 Apr 27

I GKS
DUT

MBB697

Fig.5

R1V
R1 R2 B

Equivalent test circuit for characteristics
testing.

handbook, halfpage

DUTI GAO

R1 R2

MBB699Fig.3 BRY61 with ‘program’ resistors R1 and R2.

handbook, halfpage

VS =R1 R2

Fig.6

4

Equivalent test circuit for gate-cathodeleakage current.

Philips Semiconductors

Product specification

Programmable unijunction transistor

BRY61

IA
handbook, halfpage

VAA

handbook, halfpage

1.5
MΩ

16 kΩ

DUT

C
I(V)

VO
20 Ω

27 kΩ

I(P)
VS V(P)VAK

MBB698

MEA143

Fig.7 Offset voltage.

handbook, halfpage

Fig.8 Test circuit for peak output voltage.

MBB701VOVOM
90 %

10 %trtime

Fig.9 Peak output voltage.

1999 Apr 27

5

Philips Semiconductors

Product specification

Programmable unijunction transistor

BRY61

PACKAGE OUTLINE
Plastic surface mounted package; 3 leads

SOT23

DEB

AX

HEv M A

3QA
A1

12
e1

bpcw M B

Lpedetail X

0

12 mmscale

DIMENSIONS (mm are the original dimensions)
UNIT

A

A1max.

bpcDEee1HE

LpQvw

mm

1.1
0.9

0.1

0.48
0.38

0.15
0.09

3.0
2.8

1.4
1.2

1.9

0.95

2.5
2.1

0.45
0.15

0.55
0.45

0.20.1OUTLINE
VERSION

REFERENCES
IEC

JEDEC

EIAJ

ISSUE DATE
97-02-28

SOT23

1999 Apr 27

EUROPEAN
PROJECTION6

Philips Semiconductors

Product specification

Programmable unijunction transistor

BRY61

DEFINITIONS
Data Sheet Status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 27

7

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Printed in The Netherlands

115002/00/03/pp8

Date of release: 1999 Apr 27

Document order number:

9397 750 05775