Single P-channel MOSFET
ELM65103A-S

http://www.elm-tech.com■General description■Features

ELM65103A-S uses advanced trench technology toprovide excellent Rds(on), low gate charge and low gate
threshold voltage.

• Vds=-30V• Id=-4.5A (Vgs=-10V)• Rds(on) = 41mΩ (Vgs=-10V)• Rds(on) = 60mΩ (Vgs=-4.5V)■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage

Ta=25°C. Unless otherwise noted.

Ta=25°C
Ta=70°C

Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range

Tc=25°C
Tc=75°C

Symbol
Vds
Vgs
IdIdm
PdTj, Tstg

Limit
-30±20-4.5-3.5-20
1.38
0.83
-55 to +150

Unit
VVNoteAA

1, 2W

3°C

NOTE : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board.

■Thermal characteristics
Parameter
Thermal resistance, junction-to-ambient

Symbol
RθjaTyp.
-Max.
90

Unit°C/W

Note

NOTE : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.

■Pin configuration■Circuit

SOT-23(TOP VIEW)
312DPin No.
1Pin nameGATE

23SOURCEDRAIN

GS

Rev.1.01/7

Single P-channel MOSFET
ELM65103A-S■Electrical characteristics
Parameter

http://www.elm-tech.com
Ta=25°C. Unless otherwise noted.

SymbolCondition

Min.

Typ.

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V-30--Zero gate voltage drain currentIdss---1---10

Vds=-24V, Vgs=0V
Vds=-24V, Vgs=0V (Ta=125°C)

Max. Unit
VμA

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA-1.2

1.8±100-2.2

Static drain-source on-resistance *Rds(on)Vgs=-10V, Id=-4.5A

-

41

50

Vgs=-4.5V, Id=-3.5A
Vds=-10V, Id=-4.5A

-60
4.3

70-4.5Is=-1A, Vgs=0V---18-1.2

AV-

885
86
81-

pF
pF
pF-

153-nCnC-

7-nC-

81230-nsnsns-

23
32.013.5-nsnsnC

Forward transconductance *Max. body-diode continuous current *Pulsed body-diode current *Diode forward voltage *Gfs
IsIsmVsdnAVmΩ
SA

DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge *Gate-source charge *Ciss
CossCrss

Gate-drain charge *Turn-on delay time *Turn-on rise time *Qgd

Turn-off delay time *Turn-off fall time *Body diode reverse recovery time *Body diode reverse recovery charge *Qg
Qgs

Vgs=0V, Vds=-10V, f=1MHz

Vgs=-10V, Vds=-15V
Id=-4.5A

td(on)
Vgs=-10V, Vds=-15V
tr
Id=-1A, Rd=15Ω
td(off)Rgen=6Ω
tftrr
If=-4.5A, dIf/dt=100A/μs
Qrr-* Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%.

Recommended Soldering Footprint■Reference land pattern

Rev.1.02/7

Single P-channel MOSFET
CYStech ELM65103A-S
Electronics Corp.
■Typical electrical and thermal characteristics
Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics-ID, Drain Current (A)201510V
9V
8V
7V
6V
5V

-VGS=4.5V-VGS=4V-VGS=3.5V

10-VGS=3V

5-VGS=2.5V

40-BVDSS, Drain-Source Breakdown Voltage(V)

2538363432

ID=-250μA,
VGS=0V

30

0012345678-VDS, Drain-Source Voltage(V)9-75 -50 -25

10Static Drain-Source On-State resistance vs Drain Current

1.2
VGS=-3V-VSD, Source-Drain Voltage(V)R DS(on) , Static Drain-Source On-StateResistance(mΩ)

025 50 75 100 125 150 175
Tj, Junction Temperature(°C)

Reverse Drain Current vs Source-Drain Voltage

1000

VGS=-4.5V

VGS=-2.5V

100

VGS=-10V
VGS=-4V

100.001

Tj=25°C

0.8
Tj=150°C

0.60.40.20.01

0.1
1-ID, Drain Current(A)100100R DS(ON) , Static Drain-Source On-StateResistance(mΩ)

180160140120100
ID=-4.5A
ID=-3.5A

80
60
40
2002468-VGS, Gate-Source Voltage(V)

2468-IDR, Reverse Drain Current (A)

10Drain-Source On-State Resistance vs Junction Tempearture

2000VGS=0V

1

Static Drain-Source On-State Resistance vs Gate-SourceVoltage

R DS(ON) , Static Drain-Source OnState Resistance(mΩ)

Spec. No. : C400N3Issued Date : 2011.11.28
Revised Date : 2019.03.06
http://www.elm-tech.com
Page No. : 4/99085807570656055504540353025
20

VGS=-4.5V, ID=-4A

VGS=-10V, ID=-5A-60

10MTP5103N3-20

2060
100140Tj, Junction Temperature(°C)

180

CYStek Product Specification

Rev.1.0
3/7

Single P-channel MOSFET
CYStech Electronics Corp.

Spec. No. : C400N3Issued Date : 2011.11.28
Revised Date : 2019.03.06
Page No. : 5/9

ELM65103A-S

http://www.elm-tech.comTypical Characteristics(Cont.)Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage
2.2-VGS(th),Threshold Voltage-(V)Capacitance---(pF)10000

Ciss1000

Coss100

Crss

ID=-250uA

21.8
1.6
1.4
1.2
10.8

100.1

110-VDS, Drain-Source Voltage(V)-60 -40 -20

1006080 100 120 140 160

Gate Charge Characteristics

1012-VGS, Gate-Source Voltage(V)GFS, Forward Transfer Admittance-(S)20 40Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

10.1

VDS=-10V
PulsedTa=25°C

108

VDS=-15VID=-4.5A

64200.01
0.001

0.01

0.1
1-ID, Drain Current(A)010Maximum Safe Operating Area

24681012Qg, Total Gate Charge(nC)1416Maximum Drain Current vs JunctionTemperature

1006RDS(ON)Limited

10-ID, Maximum Drain Current(A)-ID, Drain Current (A)0100μs
1ms
10ms

1100ms0.1

DC0.015432
1TA=25°C, VGS=-10V

00.01

0.1
110-VDS, Drain-Source Voltage(V)100

MTP5103N3255075
100125Tj, Junction Temperature(°C)

150

175

CYStek Product Specification

Rev.1.04/7

Single P-channel MOSFET
CYStech Electronics Corp.
ELM65103A-S

Spec. No. : C400N3
Issued Date : 2011.11.28
Revised Date : 2019.03.06
Page No. : 6/9
http://www.elm-tech.com

Typical Characteristics(Cont.)
Power Derating Curve
1.6

PD, Power Dissipation(W)

1.4

Mounted on FR-4 board
with 1 in² pad area

1.2
10.8
0.6
0.4
0.2
0020

40
60
80
100 120TA, Ambient Temperature(℃)

140160Transient Thermal Response Curves

Normalized Transient Thermal Resistance

1D=0.50.2

0.1

1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TC=PDM*ZθJC(t)4.RθJA=90°C/W

0.1
0.05
0.02
0.01
Single Pulse

0.01
1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

t1, Square Wave Pulse Duration(s)MTP5103N3

CYStek Product Specification

Rev.1.0
5/7

Single P-channel MOSFET
ELM65103A-S

http://www.elm-tech.com■SOT-23 dimension

SOT-23 Dimension

DIM
A
B
C
DGH

Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040

Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10

DIMJKLSVL1Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197

Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
kMaterial: Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Rev.1.0
6/7

Single P-channel MOSFET
ELM65103A-S■Reel & carrier tape dimension

http://www.elm-tech.com

Reel Dimension
Dimension
Reel• ReelCarrier
Tape Dimension
Dimension•Carrier
Carrier tape
TapeRev.1.0
7/7