Ordering number:EN1426B

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1381/2SC3503
High-Definition CRT Display,
Video Output Applications
Features

Package Dimensions· High breakdown voltage : VCEO≥300V.
· Small reverse transfer capacitance and excellent highfrequency characteristic: Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
· Adoption of MBIT process.

unit:mm
2009A[2SA1381/2SC3503]

JEDEC : TO-126

B : Base
C : Collector
E : Emitter

Specifications
Absolute Maximum Ratings at Ta = 25˚CParameter

SymbolConditions

Ratings

Unit

Collector-to-Base VoltageVCBO(–)300V

Collector-to-Emitter Voltage

VCEO
VEBO

(–)300V(–)5V

Collector Current

IC(–)100mA

Collector Current (Pulse)

ICP(–)200mA

Collector Dissipation

PC

1.2W

Emitter-to-Base Voltage

Tc=25˚C

7W

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg–55 to +150

˚C

Electrical Characteristics at Ta = 25˚CParameter

SymbolConditions

Ratings
mintypmax

Unit

Collector Cutoff Current

ICBO

VCB=(–)200V, IE=0(–)0.1µA

Emitter Cutoff Current

IEBO

VEB=(–)4V, IC=0(–)0.1µA

DC Current GainhFEVCE=(–)10V, IC=(–)10mA

Gain-Bandwidth ProductfT
Cob

VCE=(–)30V, IC=(–)10mA

150

MHz

VCB=(–)30V, f=1MHz

2.6pF

(3.1)

pF

1.8pF

Output Capacitance
Reverse Transfer Capacitance

Cre

40*

VCB=(–)30V, f=1MHz

320*

(2.3)
Collector-to-Emitter Saturation Voltage

VCE(sat)
VBE(sat)pF

IC=(–)20mA, IB=(–)2mA(–)0.6V(–)1.0V

Collector-to-Emitter Breakdown Voltage

IC=(–)20mA, IB=(–)2mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞

Base-to-Emitter Breakdown Votage

V(BR)EBO

Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage

IE=(–)10µA, IC=0(–)300V(–)300V(–)5V* : The 2SA1381/2SC3503 are classified by 10mA hFE as follows :40C8060

D120100

E200160F320

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN71598HA (KT)/3107KI/D134MW, TS No.1426-1/4

2SA1381/2SC3503

No.1426-2/4

2SA1381/2SC3503

No.1426-3/4

2SA1381/2SC3503

No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment andthe like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights ofthird parties.
This catalog provides information as of July, 1998. Specifications and information herein are subject tochange without notice.
PS No.1426-4/4

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