BAT 41®

SMALL SIGNAL SCHOTTKY DIODEDESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive voltage such as electrostatic discharges.

DO 35(Glass)

ABSOLUTE RATINGS (limiting values)
SymbolVRRM

Parameter
Repetitive Peak Reverse Voltage

ValueUnit

100V

IFForward Continuous Current*

Ta = 25 °C

100mA

IFRM

Repetitive Peak Forward Current*

tp ≤ 1sδ ≤ 0.5

350mA

IFSM

Surge non Repetitive Forward Current*

tp ≤ 10ms

750mA

Ta = 95°C

Ptot

Power Dissipation*

Tstg
Tj

Storage and Junction Temperature Range

TL

Maximum Lead Temperature for Soldering during 10s at 4mm
from Case

100mW- 65 to +150
- 65 to +125°C°C

230°C

Value

Unit

300°C/W

THERMAL RESISTANCE
SymbolRth(j-a)Test Conditions
Junction-ambient*

ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
SymbolVBR
VF * *IR * *

Tj = 25°C

Test Conditions

Min.

IR = 100µA

100

Tj = 25°C

IF = 1mA

Tj = 25°C

IF = 200mA

Typ.

Max.

Unit

0.40.45VV
1

VR = 50V

Tj = 25°C0.1µA

20

Tj = 100°C

DYNAMIC CHARACTERISTICS
SymbolCTest Conditions
Tj = 25°C

VR = 1VMin.
f = 1MHz

Typ.
2Max.

UnitpF* On infinite heatsink with 4mm lead length* * Pulse test: tp ≤ 300µs δ < 2%.

August 1999 Ed: 1A

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BAT 41
Figure 1. Forward current versus forward
voltage at different temperatures (typicalvalues).

Figure 2. Forward current versus forward
voltage (typical values).

Figure 3. Reverse current versus junction
temperature.

Figure 4. Reverse current versus continuous
reverse voltage (typical values).

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BAT 41
Figure 5. Capacitance C versus reverse
applied voltage VR (typical values).

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BAT 41
PACKAGE MECHANICAL DATA
DO 35 GlassDIMENSIONS
REF.
B

A

note 1 E

B
E note 1/DO

/C
OMillimeters

Inches

Min.

Max.

Min.

Max.

A

3.05

4.50

0.120

0.177

B

1.53

2.00

0.060

0.079

C

12.7

D

0.458

0.500
0.558

0.018

0.022

O
/D
note 2

Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g

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