TENTATIVE

2SK3667

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3667
unit：ｍｍ

Switching Regulator Applications
10±0.3φ3.2±0.2

1.1
1.1

Rating

Unit

Drain-source voltage

VDSS

600

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

600

V

Gate-source voltage

VGSS

±30V

(Note 1)ID

10Pulse (t = 1 ms)(Note 1)IDP

30

Drain power dissipation (Tc = 25°C)

PD

45W

Single pulse avalanche energy(Note 2)

EAS

TBDmJ

Avalanche current

IAR10A

Repetitive avalanche energy (Note 3)EAR

4.5mJ

Channel temperature

Tch150°C

Storage temperature range

Tstg-55~150°C

0.69±0.15

A

Thermal Characteristics
Characteristics

SymbolMax

Unit

Thermal resistance, channel to caseRth (ch-c)

2.78°C/W

Thermal resistance, channel to ambient

Rth (ch-a)62.5°C/W

2.6

2.54±0.25

0.64±0.15

DC
Drain current

2.54±0.25

1 2 3

1.
2.
3.

Gate
Drain
Source

JEDEC

―

JEITA

―

TOSHIBA―

Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = TBD mH, IAR = 3.5 A, RG = 25 Ω

4.5±0.2

Symbol12.5 Min.

Maximum Ratings (Ta = 25°C)
Characteristics

15.0±0.3

3.9 3.0

Low drain-source ON resistance: RDS (ON) = 0.74Ω (typ.)High forward transfer admittance: |Yfs| =S (typ.)Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

2.8Max••••2.7±0.2

21Note 3: Repetitive rating: Pulse width limited by maximum channel temperatureThis transistor is an electrostatic sensitive device. Please handle with caution.

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TENTATIVE

2SK3667

Electrical Characteristics (Ta = 25°C)
Characteristics

SymbolTest Condition

MinTyp.

MaxUnitIGSSVGS = ±25 V, VDS = 0 V





±10µA

V (BR) GSS

IG =±10 µA, VGS = 0 V±30





V

IDSS

VDS = 600 V, VGS = 0 V





100µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

600VVthVDS = 10 V, ID = 1 mA

2.0

4.0V

Drain-source ON resistanceRDS (ON)

VGS = 10 V, ID = 5 A

0.741.0Ω

Forward transfer admittanceYfs

VDS = 20 V, ID = 5 A

TBD

TBD



S

Input capacitance

Ciss



TBD



Reverse transfer capacitance

Crss

TBD



Output capacitance

Coss

TBD



VOUT



TBD



RL =60 Ω



TBD





TBD





TBD





TBD





TBD





TBD

Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage

VDS = 25 V, VGS = 0 V, f = 1 MHz

ID = 5A

10 V
VGS0V

Rise timetr

Turn-on time

tonFall timetf

Turn-off time

toff

4.7 Ω

Switching time

VDD ∼− 300 V
Duty <= 1%, tw = 10 µs

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD ∼− 400 V, VGS = 10 V, ID = 10 A

pF

nsnC

Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics

SymbolTest Condition

MinTyp.

Max

Unit(Note 1)

IDR



10A

(Note 1)

IDRP



30

A

Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)VDSF

IDR = 10 A, VGS = 0 V

−1.9V

Reverse recovery timetrr

IDR = 10 A, VGS = 0 V,

TBDnsReverse recovery charge

QrrdIDR/dt = 100 A/µs

TBD

µC

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2SK3667

RESTRICTIONS ON PRODUCT USE

000707EAA• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physicalstress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards ofsafety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions andconditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life orbodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane orspaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in thisdocument shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or otherrights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.

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