2SA1869
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1869
Power Amplifier Applications•Good linearity of hFE•

Complementary to 2SC4935

Unit: mm

Absolute Maximum Ratings (Tc = 25°C)
Characteristics

SymbolRating

Unit

Collector-base voltage

VCBO

−50

V

Collector-emitter voltage

VCEO

−50

V

Emitter-base voltage

VEBO

−5V

Collector current

IC−3

A

Base current

IB−0.3APC

10W

Junction temperature

Tj150°C

Storage temperature range

Tstg−55 to 150°C

Collector power dissipation(Tc = 25°C)

JEDEC―JEITA

SC-67

Note: Using continuously under heavy loads (e.g. the application of highTOSHIBA
2-10R1A
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)temperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test reportand estimated failure rate, etc).

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2SA1869
Electrical Characteristics (Tc = 25°C)
Characteristics

SymbolTest Condition

MinTyp.

MaxUnitCollector cut-off current

ICBO

VCB = −50 V, IE = 0――−1.0μA

Emitter cut-off current

IEBO

VEB = −5 V, IC = 0―

―−1.0

μA

V (BR) CEO

IC = −10 mA, IB = 0−50――

V

VCE = −2 V, IC = −0.5 A

70―240hFE (2)VCE = −2 V, IC = −2.5 A

30――VCE (sat)IC = −2 A, IB = −0.2 A―−0.3−0.6

VBase-emitter voltage

VBE

VCE = −2 V, IC = −0.5 A―−0.8−1.0VTransition frequency

fT

VCE = −2 V, IC = −0.5 A

―100―

MHz

Collector output capacitanceCob

VCB = −10 V, IE = 0, f = 1 MHz

―

35

―

pF

Collector-emitter breakdown voltagehFE (1)
DC current gain(Note)

Collector-emitter saturation voltage

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

A1869

Characteristics
indicator

Part No. (or abbreviation code)
Lot No.

A line indicateslead (Pb)-free package orlead (Pb)-free finish.

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2SA1869

IC – VCEhFE – IC
1000−3−40−50−30

DC current gain hFE−2−15−10−1−4−6−8Collector-emitter voltage−255030

Common emitter
VCE = −2 V5Common emitter
Tc = 25°C−21002510IB = −5 mA

00Tc = 100°C300−20(A)Collector current IC

500−253−0.01−0.1−10−1Collector current IC

VCE (sat) – ICIC – VBE−3Common emitter

IC/IB = 10

VCE = 2 V(A)

−2.5−0.5Collector current ICCollector-emitter saturation voltage
VCE (sat) (V)Common emitter−0.3
Tc = 100°C
25−0.1−25−0.05−0.03−2−1.5
Tc = 100°C−125−25−0.5−0.01−0.01−0.1−1Collector current IC−1000(mA)−0.2−0.4−0.6−0.8

Base-emitter voltage−10(A)(2) No heat sinkCollector current IC8642(2)2575100125150

175−1−0.5Ambient temperature Ta (°C)

310 ms*IC max(continuous)

100 ms*DC operation
Tc = 25°C−0.3−0.03−1200

1 ms*−3−0.150−1.4

IC max (pulsed)*−0.05
00−1.2−5

Infinite heat sink

(1)

PC(W)

(1) Tc = Ta
10−1

VBE (V)

Safe Operating Area

PC – Ta
12Collector power dissipation(A)

VCE (V)−3−1−10*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase intemperature.
−10−100

Collector-emitter voltage

VCE (V)−500

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2SA1869

RESTRICTIONS ON PRODUCT USE

20070701-EN• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physicalstress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards ofsafety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions andconditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life orbodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane orspaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. Noresponsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights ofTOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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