LME49740
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SNAS377B – FEBRUARY 2007 – REVISED APRIL 2013

LME49740 Quad High-Performance, High-Fidelity Audio Operational Amplifier
Check for Samples: LME49740

FEATURESDESCRIPTION

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The LME49740 is part of the ultra-low distortion, low
noise, high slew rate operational amplifier series
optimized and fully specified for high-performance,high-fidelity applications. Combining advanced
leading-edge process technology with state-of-the-art
circuit design, the LME49740 audio operational
amplifiers deliver superior audio signal amplificationfor outstanding audio performance. The LME49740
combines extremely low voltage noise density(2.7nV/√HZ) with vanishingly low THD+N (0.00003%)
to easily satisfy the most demanding audio
applications. To ensure that the most challenging
loads are driven without compromise, the LME49740
has a high slew rate of ±20V/μs and an output current
capability of ±26mA. Further, dynamic range ismaximized by an output stage that drives 2kΩ loads
to within 1V of either power supply voltage and towithin 1.4V when driving 600Ω loads.

1

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Easily Drives 600Ω Loads
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
PSRR and CMRR Exceed 120dB (Typ)SOIC and PDIP Packages

APPLICATIONS
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Ultra High-Quality Audio Amplification
High-Fidelity PreamplifiersHigh-Fidelity Multimedia
State-of-the-Art Phono Pre Amps
High-Performance Professional Audio
High-Fidelity Equalization and Crossover
Networks
High-Performance Line Drivers
High-Performance Line Receivers
High-Fidelity Active Filters

KEY SPECIFICATIONS
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Power Supply Voltage Range: ±2.5V to ±17V
THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)–
RL = 2kΩ: 0.00003% (typ)–RL = 600Ω: 0.00003% (typ)Input Noise Density: 2.7nV/√Hz (typ)Slew Rate: ±20V/μs (typ)Gain Bandwidth Product: 55MHz (typ)Open Loop Gain (RL = 600Ω): 140dB (typ)Input Bias Current: 10nA (typ)Input Offset Voltage: 0.1mV (typ)DC Gain Linearity Error: 0.000009%

The LME49740's outstanding CMRR (120dB), PSRR
(120dB), and VOS (0.1mV) give the amplifier excellent
operational amplifier DC performance.
The LME49740 has a wide supply range of ±2.5V to±17V. Over this supply range the LME49740’s input
circuitry maintains excellent common-mode andpower supply rejection, as well as maintaining its low
input bias current. The LME49740 is unity gain
stable. The Audio Operational Amplifier achieves
outstanding AC performance while driving complex
loads with values as high as 100pF.
The LME49740 is available in 14-lead narrow body
SOIC and 14-lead PDIP. Demonstration boards areavailable for each package.

1

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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does notnecessarily include testing of all parameters.

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TYPICAL APPLICATION
150:

3320:

150:

3320:

26.1 k:
+
909:

-

-

LME49740+
INPUT

LME49740
22 nF//4.7 nF//500 pF

10 pF
47 k:

+

3.83 k:+100:

OUTPUT

47 nF//33 nF

Note: 1% metal film resistors, 5% polypropylene capacitors

Figure 1. Passively Equalized RIAA Phono Preamplifier

CONNECTION DIAGRAM

Figure 2. 14-Lead SOIC (D Package)
14-Lead PDIP (NFF Package)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

2

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ABSOLUTE MAXIMUM RATINGS (1) (2) (3)Power Supply Voltage(VS = V+ - V-)

36V

Storage Temperature−65°C to 150°C

Input Voltage(V-) - 0.7V to (V+) + 0.7V

Output Short Circuit(4)

Continuous

Power Dissipation

Internally Limited

ESD Susceptibility (5)ESD Susceptibility

2000V

(6)

200V

Junction Temperature

150°C

Thermal ResistanceθJA (MA)

107°C/WθJA (NA)

74°C/W

Temperature Range
TMIN ≤ TA ≤ TMAX

–40°C ≤ TA ≤ 85°C

Supply Voltage Range±2.5V ≤ VS ≤ ± 17V

(1)
(2)
(3)
(4)
(5)
(6)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability andspecifications.
Amplifier output connected to GND, any number of amplifiers within a package.
Human body model, 100pF discharged through a 1.5kΩ resistor.
Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and thendischarged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω).

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ELECTRICAL CHARACTERISTICS (1) (2)The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25C, unless otherwise specified.
SymbolTHD+N

Parameter

Total Harmonic Distortion + Noise

Conditions

LME49740
Typical(3)

AV = 1, VOUT = 3VRMS
RL = 2kΩ
RL = 600Ω

0.000030.00003

AV = 1, VOUT = 3VRMS
Two-tone, 60Hz & 7kHz 4:1

0.00005

Limit (4) (5)0.00009

Units(Limits)% (max)% (max)

IMD

Intermodulation Distortion

GBWP

Gain Bandwidth Product55

45

MHz (min)SR

Slew Rate

±20

±15

V/μs (min)FPBWFull Power Bandwidth

VOUT = 1VP-P, –3dB
referenced to output magnitude
at f = 1kHz

ts

Settling time

AV = 1, 10V step, CL = 100pF
0.1% error range

1.2

Equivalent Input Noise Voltage

fBW = 20Hz to 20kHz

0.34

0.65

μVRMS

Equivalent Input Noise Density

f = 1kHzf = 10Hz

2.7
6.4

4.7

nV/√HznV/√HzinCurrent Noise Density

f = 1kHzf = 10Hz

1.6
3.1

VOS

Offset Voltage

ΔVOS/ΔTemp

Average Input Offset Voltage Drift vs
Temperature

40°C ≤ TA ≤ 85°C

0.2

PSRR

Average Input Offset Voltage Shift vsPower Supply Voltage

ΔVS = 20V (6)120

ISOCH-CH

Channel-to-Channel IsolationfIN = 1kHz
fIN = 20kHz

118
112

IB

Input Bias Current

VCM = 0V

10

ΔIOS/ΔTemp

Input Bias Current Drift vs
Temperature–40°C ≤ TA ≤ 85°C

0.1

IOS

Input Offset Current

VCM = 0V

1165

nA (max)

VIN-CM

Common-Mode Input Voltage Range

+14.1
–13.9

(V+)–2.0(V-)+2.0

V (min)V (min)CMRR

Common-Mode Rejection

120

110

dB (min)en

ZIN

Common Mode Input Impedance

AVOL

Open Loop Voltage Gain

VOUTMAX

Maximum Output Voltage Swing

IOUT

Output Current

IOUT-CC

Short Circuit Current

ROUT

Output Impedance

(1)
(2)
(3)
(4)
(5)
(6)
4

10

±0.1

–10V<VCM<10V

Differential Input Impedance% (max)MHz

μs

pA/√HzpA/√Hz±0.7

mV (max)
μV/°C

110

dB (min)dB
dB

72nA (max)
nA/°C

30

kΩ

–10V<VCM<10V

1000

MΩ

–10V<VOUT<10V, RL = 600Ω

140

dB (min)–10V<VOUT<10V, RL = 2kΩ

140

dB (min)–10V<VOUT<10V, RL = 10kΩ

140

125

dB (min)

RL = 600Ω

±13.6

±12.5

V (min)RL = 2kΩ±14.0

RL = 10kΩ±14.1

RL = 600Ω, VS = ±17V

±26

fIN = 10kHz
Closed-Loop
Open-Loop

V (min)V (min)±23mA (min)

+30
–38

mA
mA

0.01
13

Ω
Ω

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
Typical specifications are specified at +25ºC and represent the most likely parametric norm.
Tested limits are specified to AOQL (Average Outgoing Quality Level).
Datasheet min/max specification limits are specified by design, test, or statistical analysis.
PSRR is measured as follows: VOS is measured at two supply voltages, ±5V and ±15V. PSRR = |20log(ΔVOS/ΔVS)|.
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ELECTRICAL CHARACTERISTICS(1)(2) (continued)
The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25C, unless otherwise specified.
SymbolParameter

Conditions

LME49740
Typical

CLOAD

Capacitive Load Drive Overshoot

100pF

16

IS

Total Quiescent Current

IOUT = 0mA

18.5

(3)

Limit (4) (5)Units(Limits)

20

mA (max)%

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TYPICAL PERFORMANCE CHARACTERISTICS

6

THD+N vs Output Voltage
VCC = 15V, VEE = –15V, RL = 2kΩ

THD+N vs Output Voltage
VCC = 17V, VEE = –17V, RL = 2kΩ

Figure 3.

Figure 4.

THD+N vs Frequency
VCC = 15V, VEE = –15V, RL = 2kΩ, VOUT = 3VRMS

THD+N vs Frequency
VCC = 17V, VEE = –17V, RL = 2kΩ, VOUT = 3VRMS

Figure 5.

Figure 6.

THD+N vs Frequency
VCC = 15V, VEE = –15V, RL = 600Ω, VOUT = 3VRMS

THD+N vs Frequency
VCC = 17V, VEE = –17V, RL = 600Ω, VOUT = 3VRMS

Figure 7.

Figure 8.

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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
0.01

IMD vs Output Voltage
VCC = 15V, VEE = –15V, RL = 2kΩ

0.005

0.005

0.002

0.002

IMD (%)

0.001

IMD (%)

0.01

0.00050.00020.001
0.00050.00020.00010.00010.00005

0.00005

0.000020.000020.0000110m

10.00001
10m

10 20

10 20

Figure 9.

Figure 10.

PSRR+ vs Frequency
VCC = 15V, VEE = –15V,
RL = 2kΩ, VRIPPLE = 200mVpp

PSRR- vs Frequency
VCC = 15V, VEE = –15V, RL = 2kΩ
RL = 2kΩ, VRIPPLE = 200mVpp

-60
-70

-80

-80

-90

-90

-100
-110
-120

-100
-110
-120

-130

-130

-140

-140

-150

-150

0

1
VRMS

-70

-160
20

100m

VRMS

PSRR (dB)

PSRR (dB)

-60

100m

IMD vs Output Voltage
VCC = 17V, VEE = –17V, RL = 2kΩ

100

10k 20k

1k

-160
20

100

1k

10k 20k

FREQUENCY (Hz)FREQUENCY (Hz)Figure 11.

Figure 12.

CMRR vs Frequency
VCC = 15V, VEE = –15V, RL = 2kΩ

Crosstalk vs Frequency
VCC = 15V, VEE = –15V, RL = 2kΩ

-10
-20

CMRR (dB)

-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
10

100

1k

10k

100k

FREQUENCY (Hz)Figure 13.

Figure 14.

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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Output Voltage vs Supply Voltage
RL = 2kΩ, THD+N = 1%

Output Voltage vs Load Resistance
THD+N = 1%

Figure 15.

Figure 16.

Supply Current vs Supply Voltage
RL = 2kΩ, THD+N = 1%

Full Power Bandwidth vs Frequency
20
0 dB = 1 VPP

MAGNITUDE (dB)

-2
-4
-6
-8
-10
-12
-14

1

10

100

1k

10k 100k 1M

10M 100M

FREQUENCY (Hz)Figure 17.

Figure 18.

Gain Phase vs Frequency

Voltage Noise Density vs Frequency
100

160

VS = 30V

140

VCM = 15V

VOLTAGE NOISE (nV/ Hz)

GAIN (dB), PHASE LAG (q

180

120
100
80
60
40

10

20
0
10

100

1k

10k

100k

1M

10M

FREQUENCY (Hz)

1

10

100

1k

10k

100k

FREQUENCY (Hz)Figure 19.

81Figure 20.

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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Small-Signal Transient Response
AV = 1, CL = 100pF

Large-Signal Transient Response
AV = 1, CL = 100pF

Figure 21.

Figure 22.

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APPLICATION INFORMATIONDISTORTION MEASUREMENTS
The vanishingly low residual distortion produced by LME49740 is below the capabilities of all commerciallyavailable equipment. This makes distortion measurements just slightly more difficult than simply connecting a
distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional
resistor. Adding this resistor extends the resolution of the distortion measurement equipment.
The LME49740’s low residual distortion is an input referred internal error. As shown in Figure 23, adding the 10Ω
resistor connected between the amplifier’s inverting and non-inverting inputs changes the amplifier’s noise gain.
The result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier’s closed-loop
gain is unaltered, the feedback available to correct distortion errors is reduced by 101, which means thatmeasurement resolution increases by 101. To ensure minimum effects on distortion measurements, keep thevalue of R1 low as shown in Figure 23.
This technique is verified by duplicating the measurements with high closed loop gain and/or making themeasurements at high frequencies. Doing so produces distortion components that are within the measurement
equipment’s capabilities. This datasheet’s THD+N and IMD values were generated using the above describedcircuit connected to an Audio Precision System Two Cascade.
R2
1000:

LME49740

R1
10:

Distortion Signal Gain = 1+(R2/R1)+
Analyzer Input

Generator Output
Audio Precision
System Two
CascadeActual Distortion = AP Value/100

Figure 23. THD+N and IMD Distortion Test Circuit

APPLICATION HINTS
The LME49740 is a high-speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF
will cause little change in the phase characteristics of the amplifiers and are therefore allowable.
Capacitive loads greater than 100pF must be isolated from the output. The most straightforward way to do this is
to put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output isaccidentally shorted.

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NOISE MEASUREMENT CIRCUIT+VCC -VEE
+
47 PF

47 PF
+

+

V1

0.47 PF

LME49740

390

+

V2

15 nF

0.47 PF+39k-

4.7 nF

39k

AVERAGE RESPONDING
AC VOLT METER

16k

99k
27 pF

1k
390

27 pF

1k

RIAA PREAMP
35 dB, f = 1 kHz

A.

VO

-

99k
200k

4.7 PF+FLAT AMP. 40 dB + 40 dB

Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope forpower line noise.

Figure 24. Total Gain: 115 dB at f = 1 kHz
Input Referred Noise Voltage: en = VO/560,000 (V)Flat Amp Voltage Gain vs Frequency
VO = 0dB, AV = 80.0dB, f = 1kHz

50

90

40

80

VOLTAGE GAIN (dB)

RIAA
DEVIATION (dB)

VOLTAGE GAIN (dB)

RIAA Preamp Voltage Gain,
RIAA Deviation vs Frequency
VIN = 10mV, AV = 35.0dB, f = 1kHz

30
20
10
0
+1

70
60
50
40
30

0
20
-1
20

100

1k

10k 20k

10

100

1k

10k

FREQUENCY (Hz)FREQUENCY (Hz)Figure 25.

Figure 26.

100k

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TYPICAL APPLICATIONS+
1
4 LME49740

VI

TAPE
HEAD

VO

15 nF

3.6k

200k

200
+
47 PF

AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted

Figure 27. NAB Preamp
70

VOLTAGE GAIN (dB)

60
50
40
30
20
10
0
20

100

1k

10k 20k

FREQUENCY (Hz)Figure 28. NAB Preamp Voltage Gain vs Frequency
VIN = 10mV, AV = 34.5dB, f = 1kHz
R

R
V2

1
4 LME49740

R
V1

VO

+
R

VO = V1–V2

Figure 29. Balanced to Single-Ended Converter

12

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R
V1
+

R
V2

1
4 LME49740

R

VO

R
V3

R
R

V4

VO = V1 + V2 − V3 − V4

Figure 30. Adder/Subtracter
C

C

R

R
+
1
4 LME49740

VO

14 mA @ 10V
750

Figure 31. Sine Wave Oscillator
R1
11k
C1
C2
0.01 PF 0.01 PF
VI
R2
22k

+
1
4 LME49740

VO-

Illustration is f0 = 1 kHz

Figure 32. Second-Order High-Pass Filter(Butterworth)

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C1
0.022 PF

R1
10k

R2
10k
+
1
4 LME49740

VIC2
0.011 PFVO-

Illustration is f0 = 1 kHz

Figure 33. Second-Order Low-Pass Filter(Butterworth)

R2

RG
VIN

C1
0.01 PF

R1

C1
0.01 PF---

1
4 LME49740

VHP

1
4 LME49740

1
4 LME49740

R2

+

R0

R1

VBP

+

VLP

+

R2

Figure 34. State Variable Filter

14

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C1
10 PF

R5
20k
R2
20k

R3
10k

R1
20k

D1
1S1588

-

VIN

R4
20k

-

1
4 LME49740+

1
4 LME49740+

D2
1S1588R615k

VO = |VIN|

R7
6.2k

Figure 35. AC/DC Converter
3.41R1
51k
R1
15k

R1
15k

1
4 LME49740

VO1

+

VI

0.707R1
10k

R1
15k

R1
15k

1
4 LME49740

VO2+
3.41R1
51k

Figure 36. 2-Channel Panning Circuit (Pan Pot)

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R2
VCC
R3
10k

R1
-

VI

1 LME49740
4
+

Q1
R9
10k

R7
33
VO
R8
33

R5
10k
BIAS
Q2
R6
10k

-VEE

Figure 37. Line Driver
BOOST BASS CUT
R1

R2

R1

VI
C1
0.05 PF

C1
0.05 PF
R3

C2
0.005 PF

1
4 LME49740
R5

R5

VO

+

R4
BOOST TREBLE CUT

Figure 38. Tone Control

16

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33 PF

400 pF
Phono
Cartridge+
1
4 LME49740

47k

470

-

390

10 PF

100k
16k

200k

4.7 nF

15 nF

100 PFAv = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHzA Weighted
A Weighted, VIN = 10 mV@f = 1 kHz

Figure 39. RIAA Preamp

VI+
1
4 LME49740

R

R3
10k

R4
10k

R2
10k
R1
200

1
4 LME49740

R5
10k

VO

+

1
4 LME49740

R6
10k

R7
10k

+

V2
R

Illustration is:V0 = 101(V2 − V1)

Figure 40. Balanced Input Mic Amp

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CUT 20k BOOST

f01
f02

C2

f03

+
1
4 LME49740

f04

-

R2
3k
VI

C1

R1

+
1
4 LME49740

f05

-

f06

VO

3k

f07
f08
f09
f010

A.

See Table 1.

Figure 41. 10-Band Graphic Equalizer
Table 1. C1, C2, R1, and R2 Values for Figure 41 (1)fo (Hz)

C1

C2

R1

R2

32

0.12μF

4.7μF

75kΩ

500Ω

64

0.056μF

3.3μF

68kΩ

510Ω

125

0.033μF

1.5μF

62kΩ

510Ω

250

0.015μF

0.82μF

68kΩ

470Ω

500

8200pF

0.39μF

62kΩ

470Ω

1k

3900pF0.22μF

68kΩ

470Ω

2k

2000pF

0.1μF

68kΩ

470Ω

4k

1100pF

0.056μF

62kΩ

470Ω

8k

510pF

0.022μF

68kΩ

510Ω

16k

330pF

0.012μF

51kΩ

510Ω

(1)

At volume of change = ±12 dB Q = 1.7

18

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Copyright © 2007–2013, Texas Instruments Incorporated

Product Folder Links: LME49740

LME49740
www.ti.com

SNAS377B – FEBRUARY 2007 – REVISED APRIL 2013

REVISION HISTORY
Rev

Date

1.0

02/28/07

Description
Initial WEB release.

1.01

02/08/08

Fixed the captions on the LME4970MA package (from Dual-In-Line
to Molded Package (SO).

B

04/04/13

Changed layout of National Data Sheet to TI format.

Submit Documentation Feedback

Copyright © 2007–2013, Texas Instruments Incorporated

Product Folder Links: LME49740

19

PACKAGE OPTION ADDENDUM

www.ti.com

12-Feb-2014

PACKAGING INFORMATION
Orderable Device

Status(1)

Package Type Package Pins Package
Drawing
Qty

Eco Plan

Lead/Ball Finish

MSL Peak Temp

(2)

(6)

(3)

Op Temp (°C)

Device Marking(4/5)

LME49740MA/NOPB

ACTIVE

SOIC

D

14

55

Green (RoHS& no Sb/Br)

SN

Level-1-260C-UNLIM-40 to 85

LME49740
MA

LME49740MAX/NOPB

ACTIVE

SOIC

D

14

2500

Green (RoHS& no Sb/Br)

SN

Level-1-260C-UNLIM-40 to 85

LME49740
MA

LME49740NA/NOPB

ACTIVE

PDIP

NFF

14

25

Green (RoHS& no Sb/Br)

SN

Level-1-NA-UNLIM-40 to 85

LME49740NA(1)

The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)(3)

MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)

There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)

Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.
(6)

Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

Addendum-Page 1

SamplesPACKAGE OPTION ADDENDUM

www.ti.com

12-Feb-2014

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION
www.ti.com

17-Sep-2013

TAPE AND REEL INFORMATION*All dimensions are nominal

Device

LME49740MAX/NOPB

Package Package Pins
Type Drawing
SOIC

D

14

SPQ

Reel
Reel
A0
Diameter Width (mm)(mm) W1 (mm)

2500

330.0

16.4

Pack Materials-Page 1

6.5

B0
(mm)

K0
(mm)

P1
(mm)

W
Pin1
(mm) Quadrant

9.35

2.3

8.0

16.0

Q1

PACKAGE MATERIALS INFORMATION
www.ti.com

17-Sep-2013*All dimensions are nominal

DevicePackage Type

Package Drawing

Pins

SPQ

Length (mm)Width (mm)Height (mm)LME49740MAX/NOPB

SOIC

D

14

2500

367.0

367.0

35.0

Pack Materials-Page 2

MECHANICAL DATA
NFF0014A
N0014A

N14A (Rev G)

www.ti.com

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