2SK3371
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)

2SK3371
Switching Regulator Applications

Unit: mmFeatures••••

Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.)High forward transfer admittance: |Yfs| = 0.85 S (typ.)Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)
CharacteristicSymbolRatingUnit

Drain-source voltage

VDSS600V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

600

V

Gate-source voltage

VGSS

±30V

DC(Note 1)ID

1Pulse(Note 1)IDP

2Drain power dissipation (Tc = 25°C)

PD

20W

Single-pulse avalanche energy(Note 2)

EAS

56

Avalanche current

IAR

Repetitive avalanche energy (Note 3)

Drain current

A

JEDEC―JEITA

SC-64

mJ

TOSHIBA

2-7B1B

1

A

Weight: 0.36 g (typ.)

EAR

2mJ

Channel temperature

Tch150°C

Storage temperature range

Tstg−55 to 150°C

Note: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature,etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,etc.) are within the absolute maximum ratings. Please design theappropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept andMethods) and individual reliability data (i.e. reliability test report andestimated failure rate, etc).

Thermal Characteristics
CharacteristicSymbolMax

Unit

Thermal resistance, channel to caseRth (ch-c)6.25°C/W

Thermal resistance, channel to ambient

Rth (ch-a)

125°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 100 mH, IAR = 1 A, RG = 25 ΩNote 3: Repetitive rating: pulse width limited by max channel
temperature

JEDEC―JEITA―TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)This transistor is an electrostatic-sensitive device. Handle with care.

12006-11-08

2SK3371
Electrical Characteristics (Ta = 25°C)
Characteristic

SymbolTest Condition

MinTyp.

MaxUnitIGSS

VGS = ±25 V, VDS = 0 V

⎯⎯

±10μA

V (BR) GSS

IG = ±10 μA, VDS = 0 V±30

⎯

⎯

VIDSS

VDS = 600 V, VGS = 0 V

⎯⎯

100μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

600

⎯⎯

VVth

VDS = 10 V, ID = 1 mA

2.0

⎯

4.0

V

Drain-source ON-resistanceRDS (ON)

VGS = 10 V, ID = 0.5 A⎯6.49.0ΩForward transfer admittance⎪Yfs⎪

VDS = 10 V, ID = 0.5 A

0.40.85⎯

SInput capacitanceCiss⎯

190⎯

Reverse transfer capacitance

Crss⎯

15

⎯

Output capacitance

Coss⎯

55

⎯

⎯12⎯

⎯

55

⎯

⎯

40

⎯

⎯

90

⎯

⎯

9⎯

⎯

3.5

⎯⎯

5.5

⎯

Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage

Rise timetrTurn-on timeton

VDS = 10 V, VGS = 0 V, f = 1 MHz

VGS0V

RL = 600 Ω50 Ω

Switching time
Fall timetf

Turn-off time

toff

Total gate charge(gate-source plus gate-drain)

ID = 0.5 A VOUT

10 V

Duty <= 1%, tw = 10 μs

VDD ∼− 300 VQg

Gate-source charge

Qgs

Gate-drain (“Miller”) charge

Qgd

VDD ∼− 400 V, VGS = 10 V, ID = 1 A

pF

nsnC

Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristic

SymbolTest Condition

MinTyp.

Max

Unit

Continuous drain reverse current

IDR

⎯⎯

⎯

1A

Pulse drain reverse current

IDRP

⎯⎯

⎯

2

A

Diode forward voltage

VDSF

IDR = 1 A, VGS = 0 V⎯⎯−1.7

V

Reverse recovery timetrr

IDR = 1 A, VGS = 0 V,

⎯400⎯nsReverse recovery charge

QrrdIDR/dt = 100 A/μs⎯

1.4⎯μC

Marking

K3371

Part No. (or abbreviation code)
Lot No.
A line indicateslead (Pb)-free package orlead (Pb)-free finish.

22006-11-08

2SK3371

ID – VDS
1.08

Common source

6510

Tc = 25°C

6108

Common source

5.5

Tc = 25°C

1.6

Pulse test

4.75

Drain current ID (A)Drain current ID (A)0.8

ID – VDS
2.0

0.6
4.5
0.4
4.25
0.2

Pulse test

5.25
1.2

5

4.75

0.8

4.5
0.4

44.25

VGS = 3.75 V
002

468

Drain-source voltage

0010VDS (V)VGS = 4 V
1020

Drain-source voltage

ID – VGS

40

VDS (V)

2025

Common source

VDS (V)

Tc = −55°C
1.6100Drain-source voltage

1.20.8

Common source

0.4

VDS = 20 V

Tc = 25°C

16Pulse test

12

ID = 1 A

80.5

40.25

Pulse test
002

468

Gate-source voltage0010

VGS (V)48⎪Yfs⎪ – ID

1620

VGS (V)RDS (ON) − ID
30

Tc = −55°C

Drain-source ON-resistanceRDS (ON) (Ω)

Forward transfer admittance⎪Yfs⎪ (S)

12Gate-source voltage

325

1100

0.50.3Common source
VDS = 20 V
Pulse test
0.1
0.03 0.05

50

VDS – VGS

2.0

Drain current ID (A)

30

0.1

0.3

0.5

110

VGS = 10 V

53
Common source
Tc = 25°C
Pulse test
10.03 0.05
0.1

3

Drain current ID (A)

0.3

0.5

13

Drain current ID (A)32006-11-08

2SK3371

IDR – VDS
10

VGS = 10 V

16(A)ID = 1 A

Common source

0.5

Pulse test

Drain reverse current IDR

Drain-source ON-resistance RDS (ON)(Ω)

RDS (ON) – Tc
200.251284

Common source

5

Tc = 25°C

3Pulse test

10.5
0.3

0.10.05
100.0330−80−4004080

1200.010160−0.2

Case temperature Tc (°C)

1−0.4

VGS = 0 V, −1 V
−0.6−0.8

Drain-source voltage

Capacitance – VDS−1.0−1.2

VDS (V)Vth – Tc

500

5300

Vth (V)

10050Gate threshold voltage

Capacitance C(pF)

Ciss

30
Coss
105 Common source
3 VGS = 0 V
f = 1 MHz

Crss432Common source
VDS = 10 V

1ID = 1 mA
Pulse test

Tc = 25°C
10.1

0.3 0.5

135

Drain-source voltage

1030 500−80

100−4004080120160

Case temperature Tc (°C)

VDS (V)PD – Tc

Dynamic input/output characteristics

5020500

20

10004080120160

Case temperature Tc (°C)

ID = 1 A
Tc = 25°C

16Pulse test

100

12300
200
VDD = 400 V

200

100

00200

VDS

84VGS

481216

VGS (V)

400

Gate-source voltage

VDS (V)

30

Drain-source voltage

Drain power dissipation PD (W)Common source
40020

Total gate charge Qg (nC)

42006-11-08

2SK3371

rth – twNormalized transient thermal impedancerth (t)/Rth (ch-c)101
Duty = 0.5
0.2
0.1
0.1

0.05

Single pulse

0.02
0.01
PDM
0.01tTDuty = t/T
Rth (ch-c) = 6.25°C/W

0.001
0.00001

0.0001

0.001

0.01

Pulse width

0.1

tw

1(s)

Safe operating area

EAS – Tch

10Avalanche energy EAS (mJ)

100

Drain current ID(A)ID max (pulsed) *1

10100 μs *ID max (continuous)

1 ms *

DC Tc = 25°C
0.1
* Single nonrepetitive pulse

80604020Tc = 25°C
Curves must be derated linearly025with increase in temperature.
0.01
1VDSS max
10Drain-source voltage

100

5075

100125150

Channel temperature (initial) Tch (°C)

1000

VDS (V)

15 V

BVDSSIAR−15 V
VDD
Test circuit
RG = 25 Ω
VDD = 90 V, L = 100 mH

5VDSWaveformΕ AS =⎛⎞
1B VDSS⎟⋅ L ⋅ I2 ⋅ ⎜⎜B⎟
2−⎝ VDSS VDD ⎠2006-11-08

2SK3371

RESTRICTIONS ON PRODUCT USE

20070701-EN• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physicalstress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards ofsafety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions andconditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life orbodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane orspaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. Noresponsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights ofTOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

6

2006-11-08