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MPSA42 / MMBTA42 / PZTA42
NPN High-Voltage AmplifierFeatures• This device is designed for application as a video output
and other high-voltage applications.
• Sourced from process 48.

MPSA42MMBTA42PZTA42CCE

ECB

TO-92

BSOT-23

SOT-223

Mark: 1DE B C

Ordering Information
Part Number

Top Mark

Package

Packing Method

MPSA42MPSA42

TO-92 3L

Bulk

MMBTA42

1DSOT-23 3L

Tape and Reel

PZTA42

A42

SOT-223 4L

Tape and Reel

Absolute Maximum Ratings(1), (2)Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. Theabsolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

SymbolValue

UnitVCEO

Collector-Emitter Voltage

300

VVCBO

Collector-Base Voltage

300

VVEBO

Emitter-Base Voltage

6V

500

mA

-55 to +150°C

IC
TJ, TSTG

Parameter

Collector Current - Continuous
Operating and Storage Junction Temperature Range

Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.

© 1997 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0

www.fairchildsemi.com

MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage AmplifierOctober 2014

Values are at TA = 25°C unless otherwise noted.

SymbolMax.

Parameter

Unit

MPSA42MMBTA42(3)PZTA42(4)Total Device Dissipation

625

240

1000mW

Derate Above 25°C

5.00

1.92

8.00mW/°C

RθJC

Thermal Resistance, Junction-to-Case

83.3

RθJA

Thermal Resistance, Junction-to-Ambient

200515125PD°C/W°C/WNotes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2.

Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.

SymbolParameter

Conditions

Min.

Max.

Unit

Off Characteristics
V(BR)CEOCollector-Emitter Breakdown Voltage(5) IC = 1.0 mA, IB = 0300

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 100 μA, IE = 0300

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 100 μA, IC = 06VICBO

Collector Cut-Off Current

VCB = 200 V, IE = 00.1μA

IEBO

Emitter Cut-Off Current

VEB = 6 V, IC = 00.1μA(5)On CharacteristicshFE

DC Current Gain

VCE = 10 V, IC = 1.0 mA

25

VCE = 10 V, IC = 10 mA

40

VCE = 10 V, IC = 30 mA

40

VCE(sat)Collector-Emitter Saturation Voltage

IC = 20 mA, IB = 2.0 mA

0.5V

VBE(sat)Base-Emitter Saturation Voltage

IC = 20 mA, IB = 2.0 mA

0.9V

Small Signal Characteristics
fTCurrent Gain - Bandwidth Product

IC = 10 mA, VCE = 20 V,
f = 100 MHz

Ccb

Collector-Base Capacitance

VCB = 20 V, IE = 0,
f = 1.0 MHz

50MHz
3.0pF

Notes:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.

© 1997 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0

www.fairchildsemi.com
2

MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier

Thermal Characteristics

o

125 C
120

VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V]140

VCE=10Vo100 C

hFE- DC CURRENT GAINo100

75 C

8025 Co60o-40 C402001101001000100101o

100 CoTA = 125 C
0.1o

75 Co

25 C
0.01
1101001000

IC- COLLECTOR CURRENT [mA]

IC- COLLECTOR CURRENT [mA]

Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current

Figure 1. DC Current Gain vs. Collector Current

1.0

1.2

VBE(ON)- BASE-EMITTER VOLTAGE [V]VBE(SAT)- BASE-EMITTER VOLTAGE [V]o-40 Co-40 C
0.8o

25 Co

125 C

0.6o

100 Co75 C
0.40.2110o

TA = -40 C

1.0o

TA = 25 C
0.80.6o

TA = 75 Co0.4

TA = 100 Co

TA = 125 C
0.20.0100110IC- COLLECTOR CURRENT [mA]

1001000

IC- COLLECTOR CURRENT [mA]

Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current

Figure 4. Base-Emitter On Voltage vs.
Collector Current

V CB = 150V
CAPACITANCE [pF]

I CBO - COLLECTOR CURRENT (nA)

100100101255075100125
T A - AMBIENT TEMPE RATURE ( °C)

CIB

10COB

150
102468101214161820

REVERSE BIAS VOLTAGE [V]Figure 5. Collector Cut-Off Current vs.
Ambient Temperature© 1997 Fairchild Semiconductor CorporationMPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0

Figure 6. Collector-Base and Emitter-Base
Capacitance vs. Reverse-Bias Voltage

www.fairchildsemi.com
3MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier

Typical Performance CharacteristicsMPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier

Typical Performance Characteristics (Continued)

1.0

PD - POWER DISSIPATION [W]

SOT-223
0.8

0.6

TO-92

0.4

0.2

SOT-230.00255075

100125150oTC - CASE TEMPERATURE [ C]

Figure 7. Power Dissipation vs. Ambient Temperature© 1997 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0

www.fairchildsemi.com
46.70
6.20
0.10

B
C B

3.10
2.90

3.25

41.90

A

3.70
3.30

16.10

1.90

30.84
0.60

2.30

2.30

0.95
4.60
0.10

C B

LAND PATTERN RECOMMENDATIONSEE DETAIL A
1.80 MAX

C

0.08

C

0.10
0.00

10°
5°

GAGE
PLANE

R0.15±0.05
R0.15±0.05
10° TYP
0°0.25
SEATING
PLANE

10°
5°

0.60 MIN
1.70

DETAIL A
SCALE: 2:1

0.35
0.20

7.30
6.70

NOTES: UNLESS OTHERWISE SPECIFIEDA) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRSOR MOLD FLASH. MOLD FLASH OR BURRSDOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PERASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BNF) DRAWING FILENAME: MKT-MA04AREV3

ON Semiconductor andare trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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