2SC4935
TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

2SC4935
Power Amplifier Applications

Unit: mm•Good hFE linearity•

Complementary to 2SA1869 and 5-watt-output applications.

Absolute Maximum Ratings (Tc = 25°C)
Characteristics

SymbolRating

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5V

Collector current

IC3

ABase current

IB0.3

A

Collector power
dissipation

Ta = 25°C
Tc = 25°C

PC

2.010W

Junction temperature

Tj150°C

Storage temperature rangeTstg−55 to 150°CJEDEC―JEITA

SC-67

Note: Using continuously under heavy loads (e.g. the application of highTOSHIBA
2-10R1A
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)temperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test reportand estimated failure rate, etc).

1

2006-11-10

2SC4935
Electrical Characteristics (Tc = 25°C)
Characteristics

SymbolTest Condition

MinTyp.

Max

UnitCollector cut-off current

ICBO

VCB = 50 V, IE = 0――

1.0μA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0――

1.0μA

V (BR) CEO

IC = 10 mA, IB = 050――

V

VCE = 2 V, IC = 0.5 A

70―240hFE (2)VCE = 2 V, IC = 2.5 A

30――VCE (sat)IC = 2 A, IB = 0.2 A―

0.40.6V

Base-emitter voltage

VBE

VCE = 2 V, IC = 0.5 A

―

0.75

1.0VTransition frequency

fT

VCE = 2 V, IC = 0.5 A

―80―

MHz

Collector output capacitanceCob

VCB = 10 V, IE = 0, f = 1 MHz

―30

―

pF

Collector-emitter breakdown voltagehFE (1)
DC current gain(Note)

Collector-emitter saturation voltage

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

C4935

Characteristics
indicator

Part No. (or abbreviation code)
Lot No.

A line indicateslead (Pb)-free package orlead (Pb)-free finish.

22006-11-10

2SC4935

IC – VCEIC – VBE
330

Common emitter
VCE = 2 V

25152.5(A)

(A)

20

Collector current IC50Collector current IC40

32101

IB = 5 mA

21.5

Tc = 100°C

125

0.5−25

Common emitter
Tc = 25°C
002468

Collector-emitter voltage

00100.2

VCE (V)0.4

hFE – IC
Collector-emitter saturation voltage
VCE (sat) (V)DC current gain hFE

100−253010Common emitter
VCE = 2 V
30.01

11.2

1.4

VBE (V)VCE (sat) – IC25Tc = 100°C

0.8

Base-emitter voltage

10003000.6125Tc = −25°C
0.1
100Common emitter
IC/IB = 100.01
0.010.1

1

Collector current IC0.1

1

Collector current IC

10(A)

10(A)

Safe Operating Area
10IC max (pulsed)*t = 1 ms*

PC – TaIC max (continuous)Collector power dissipation

864200(2)2510.1

5075

100125150

175

10 ms*(A)(1)

Collector current IC10(1) Tc = TaInfinite heat sink(2) No heat sinkPC(W)120.05
1200

Ambient temperature Ta (°C)

100 ms*DC operation
Tc = 25°C*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearlywith increase in temperature.
3510Collector-emitter voltage

33050

100VCE (V)2006-11-10

2SC4935

RESTRICTIONS ON PRODUCT USE

20070701-EN• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physicalstress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards ofsafety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions andconditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life orbodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane orspaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights ofTOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

4

2006-11-10